Solid-state lidar transmitter with laser control

Abstract

To provide a solid-state LIDAR transmitter with laser control.SOLUTION: A solid state LIDAR transmitter with a matrix-addressable laser drive circuit includes a first electrical bus that provides a first voltage potential to columns of the matrix-addressable laser drive circuit and a second electrical bus that provides a second voltage potential to rows of the matrix-addressable laser drive circuit. A plurality of column switches connects the plurality of columns to the first electrical bus. A plurality of row switches connects the plurality of rows to the second electrical bus. The transmitter includes a plurality of series connected diodes comprising a laser diode in series with another diode, where a respective one of the plurality of series connected diodes is electrically connected between a respective column and row of the matrix-addressable laser drive circuit to form the LIDAR transmitter. At least some of the second diodes increase an overall reverse breakdown voltage of the series connected diodes.SELECTED DRAWING: None

Description

[Technical field]

[0001] The headings used herein are for organizational purposes only and are not to be construed in any way as limiting the subject matter described herein. (CROSS REFERENCE TO RELATED APPLICATIONS)

[0002] This application is a non-provisional application of U.S. Provisional Patent Application No. 62 / 831,668, entitled "Solid-State LIDAR Transmitter with Laser Control," filed on April 9, 2019. The entire contents of U.S. Provisional Patent Application No. 62 / 831,668 are incorporated herein by reference. [Background technology]

[0003] Autonomous, self-driving, and semi-autonomous automobiles use a combination of different sensors and technologies, such as radar, image recognition cameras, and ultrasonic transducers, to detect and locate surrounding objects. These sensors enable a series of improvements in driver safety, including collision warning, automatic emergency braking, lane departure warning, lane keeping assist, adaptive cruise control, and piloted driving. Among these sensor technologies, Light Detection and Ranging (LIDAR) systems play a key role, enabling real-time high-resolution three-dimensional mapping of the surrounding environment. Summary of the Invention [Means for solving the problem]

[0004] The present teachings will now be described in more detail with reference to exemplary embodiments thereof as illustrated in the accompanying drawings. While the present teachings will be described in conjunction with various embodiments and examples, it is not intended that the present teachings be limited to such embodiments. On the contrary, the present teachings encompass various alternatives, modifications, and equivalents, as will be appreciated by those skilled in the art. Those skilled in the art with access to the teachings herein will recognize additional implementations, modifications, and embodiments, and other fields of use, that are within the scope of the present disclosure as described herein.

[0005] References herein to "one embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic described in connection with an embodiment is included in at least one embodiment of the present teachings. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment.

[0006] It should be understood that the individual steps of the methods of the present teachings can be performed in any order and / or simultaneously so long as the present teachings remain operable. Further, it should be understood that the apparatus and methods of the present teachings can include any number or all of the described embodiments so long as the present teachings remain operable.

[0007] Most of the commercially available LIDAR systems used for autonomous vehicles today utilize a small number of lasers combined with some method of mechanically scanning the environment. For current and future autonomous vehicle applications, it is highly desirable to utilize solid-state semiconductor-based LIDAR systems. Solid-state LIDAR systems, especially those without moving parts, exhibit greater reliability and can operate over a wider environmental operating range compared to current LIDAR systems. Such solid-state systems for use in LIDAR systems can also be physically compact and relatively low cost.

[0008] One approach to solid-state LIDAR is to use multiple lasers, each projecting at a unique angle across the desired FOV, thereby avoiding the need for mechanical scanning. However, electrically connecting a driver circuit to multiple lasers while retaining the ability to operate them individually is a challenge. One solution is to arrange multiple lasers in a 2D matrix and then employ a matrix-addressable laser driver circuit that can control individual and / or groups of lasers in the array, providing optimal electrical characteristics (e.g., current, voltage, and timing) and simultaneously meeting the needs of laser activation. The method and apparatus of the present teachings relate to a laser control method and system architecture that allows individual control of a 2D matrix of lasers while ensuring a low-cost system. The present invention provides, for example, the following: (Item 1) 1. A solid-state light detection and ranging (LIDAR) transmitter with a matrix addressable laser driver, the LIDAR transmitter comprising: a) a first electrical bus providing a first voltage potential to a column of the row and column addressable laser drive circuits; b) a second electrical bus providing a second voltage potential to a row of the row-addressable laser driver circuits; c) a plurality of column switches, each of the plurality of column switches connecting one of the plurality of columns to the first electrical bus; and d) a plurality of row switches, each of the plurality of row switches connecting one of the plurality of rows to the second electrical bus; and e) a plurality of series connected diodes comprising laser diodes electrically connected in series with second diodes, individual ones of the plurality of series connected diodes being electrically connected between individual columns and individual rows of the row and column addressable laser driver circuit to form the LIDAR transmitter, at least some of the second diodes increasing an overall reverse breakdown voltage of the series of connected diodes, thereby reducing optical crosstalk when the LIDAR transmitter is activated; A LIDAR transmitter equipped with (Item 2) 2. The solid-state LIDAR transmitter of claim 1, wherein at least some of the second diodes include an active PN junction that generates optical gain that increases the brightness of an associated laser diode. (Item 3) 2. The solid-state LIDAR transmitter of claim 1, wherein at least some of the second diodes do not generate optical gain. (Item 4) 2. The solid-state LIDAR transmitter of claim 1, wherein at least some of the second diodes are photodiodes. (Item 5) 2. The solid-state LIDAR transmitter of claim 1, wherein at least some of the second diodes are monolithically integrated with the laser diodes. (Item 6) 2. The solid-state LIDAR transmitter of claim 1, wherein at least some of the second diodes are positioned on a substrate that is separate from the substrate of the laser diode. (Item 7) 2. The solid-state LIDAR transmitter of claim 1, wherein at least some of the plurality of series connected diodes are configured to have an overall reverse breakdown voltage that exceeds an absolute value of a maximum drive voltage provided by the first and second electrical buses. (Item 8) Item 2. The solid-state LIDAR transmitter of item 1, wherein at least some of the laser diodes comprise at least two apertures connected in series. (Item 9) Item 2. The solid-state LIDAR transmitter of item 1, wherein at least some of the laser diodes comprise at least two active regions separated by a tunnel junction. (Item 10) Item 1 . The solid-state LIDAR transmitter of item 1 , wherein at least some of the laser diodes comprise surface-emitting laser diodes. (Item 11) Item 2. The solid-state LIDAR transmitter of item 1, wherein at least some of the laser diodes comprise vertical cavity surface emitting laser diodes. (Item 12) 2. The solid-state LIDAR transmitter of claim 1, wherein the first electrical bus is configured to provide a positive voltage to the anode of the laser diode. (Item 13) 2. The solid-state LIDAR transmitter of claim 1, wherein the second electrical bus is configured to provide a ground potential to the cathode of the laser diode. (Item 14) 2. The solid-state LIDAR transmitter of claim 1, wherein at least some of the plurality of column switches and the plurality of row switches comprise transistors. (Item 15) 2. The solid-state LIDAR transmitter of claim 1, wherein at least some of the plurality of column switches and the plurality of row switches include asymmetric on-off driver circuits. (Item 16) Item 16. The solid-state LIDAR transmitter of item 15, wherein the asymmetric on-off driver circuit comprises a GaN FET driver circuit. (Item 17) 2. The solid-state LIDAR transmitter of claim 1, wherein at least some of the plurality of column switches and at least some of the plurality of row switches comprise enhanced MOSFET power transistors. (Item 18) 2. The solid-state LIDAR transmitter of claim 1, wherein at least some of the plurality of column switches and at least some of the plurality of row switches comprise GaN power transistors. (Item 19) Item 2. The solid-state LIDAR transmitter of item 1, wherein at least some of the laser diodes are configured to emit optical radiation between 830 nm and 1000 nm. (Item 20) 2. The solid-state LIDAR transmitter of claim 1, wherein the number of the plurality of rows is the same as the number of the plurality of columns. (Item 21) 2. The solid-state LIDAR transmitter of claim 1, wherein the number of the plurality of rows is not equal to the number of the plurality of columns. (Item 22) 2. The solid-state LIDAR transmitter of claim 1, further comprising a power supply that generates the first and second voltage potentials, the power supply configured to enter a reduced power mode when not generating the first and second voltage potentials. (Item 23) 1. A method for generating a light detection and ranging (LIDAR) optical beam, the method comprising: a) providing a two-dimensional array of laser devices comprising a plurality of series-connected diodes, each of the plurality of series-connected diodes comprising a laser diode electrically connected in series with a second diode, each of the plurality of series-connected diodes being electrically connected between columns and rows of respective row and column addressable laser driver circuits; b) configuring at least some of the second diodes to increase an overall reverse breakdown voltage of the series of connected diodes such that optical crosstalk in the LIDAR optical beam is reduced; c) switching a first voltage potential onto selected columns of the row and column addressable laser driver circuits; d) switching second voltage potentials onto selected rows of the matrix addressable laser driver circuit, thereby sequentially biasing selected laser diodes in the two-dimensional array of laser devices to cause emission of a LIDAR optical beam with a desired pattern having reduced optical crosstalk by the series of connected second diodes; A method comprising: (Item 24) 24. The method of generating a LIDAR optical beam as described in item 23, wherein switching the first voltage potential to a selected column of the matrix-addressable laser driver circuit includes applying a voltage greater than 10V. (Item 25) 24. The method of generating a LIDAR optical beam of claim 23, wherein switching the first voltage potential to selected columns of the matrix-addressable laser drive circuit includes switching for a predetermined time to generate a LIDAR optical beam comprising a train of light pulses. (Item 26) 24. The method of generating a LIDAR optical beam as described in item 23, further comprising selecting at least one of the first and second voltages such that a two-dimensional array of laser devices causes emission of the LIDAR optical beam with a peak power of greater than 20 Watts. (Item 27) 24. The method of generating a LIDAR optical beam as described in item 23, wherein switching the first voltage potential to selected columns of the matrix-addressable laser drive circuit and switching the second voltage potential to selected rows of the matrix-addressable laser drive circuit are performed at a rate that generates pulses within the train of optical pulses having pulse durations of less than 10 nanoseconds. (Item 28) 26. The method of generating a LIDAR optical beam as described in item 25, wherein switching the first voltage potential to selected columns of the matrix-addressable laser drive circuit and switching the second voltage potential to selected rows of the matrix-addressable laser drive circuit are performed in a manner that reduces power dissipation when pulses are not being generated. (Item 29) 30. The method of generating a LIDAR optical beam as described in item 28, further comprising shutting down a power supply generating the first and second voltage potentials when no pulses are being generated. (Item 30) 24. The method of generating a LIDAR optical beam as described in item 23, wherein switching the first voltage potential to selected columns of the matrix-addressable laser drive circuit includes switching for a predetermined time period that keeps a transient temperature rise at a junction of the laser diode below 20°C. (Item 31) 24. The method of generating a LIDAR optical beam according to claim 23, wherein at least some of the laser diodes emit the optical beam at a wavelength between 830 nm and 1,000 nm. (Item 32) 24. The method of generating a LIDAR optical beam as recited in claim 23, wherein the first voltage potential exceeds a breakdown voltage of at least some of the laser diodes. [Brief description of the drawings]

[0009] The present teachings, according to preferred and exemplary embodiments, together with further advantages thereof, are particularly described in the following detailed description taken in conjunction with the accompanying drawings. Those skilled in the art will understand that the drawings described below are for illustrative purposes only. The drawings are not necessarily to scale, emphasis instead being placed generally upon illustrating the principles of the present teachings. The drawings are not intended to limit the scope of applicant's teachings in any way.

[0010] [Figure 1A]FIG. 1A illustrates a schematic diagram of a solid-state LIDAR system.

[0011] [Figure 1B] FIG. 1B illustrates a two-dimensional projection of the system field of view (FOV) of the LIDAR system of FIG. 1A.

[0012] [Diagram 2] FIG. 2 illustrates a perspective view of a known bottom-emitting vertical-cavity surface-emitting laser (VCSEL) structure that may be used in a LIDAR system in accordance with the present teachings.

[0013] [Diagram 3] FIG. 3 illustrates a schematic diagram of an embodiment of a two-dimensional (2D) monolithic VCSEL array with 256 separate laser emitters for use in a solid-state LIDAR system in accordance with the present teachings.

[0014] [Figure 4] FIG. 4 illustrates an example cascaded two-port circuit model for an embodiment of an individual semiconductor laser of a VCSEL array in accordance with the present teachings.

[0015] [Figure 5A] FIG. 5A illustrates an electrical schematic of an embodiment of a matrix-addressable laser driver circuit for controlling a two-dimensional laser array with row / column matrix addressability in accordance with one embodiment of the present teachings.

[0016] [Figure 5B] FIG. 5B illustrates an embodiment of a matrix-addressable laser driver circuit configured as a voltage driver in which single lasers in a 2D laser array are activated using row / column matrix addressability in accordance with the present teachings.

[0017] [Figure 5C]FIG. 5C illustrates an electrical schematic of a single row / column addressable laser drive circuit configured as a high-side current driver that can be used with a 2D laser array with row / column matrix addressability, according to one embodiment of the present teachings.

[0018] [Figure 5D] FIG. 5D illustrates an electrical schematic of a single row / column addressable laser drive circuit configured as a low-side current driver that can be used with a 2D laser array with row / column matrix addressability, according to one embodiment of the present teachings.

[0019] [Figure 5E] FIG. 5E illustrates an electrical schematic of a matrix-addressable laser driver circuit configured with high-side voltage drivers for the columns, low-side voltage drivers for the rows, and switches that can be used to apply additional voltages to the rows, that can be used in conjunction with a 2D laser array with row / column matrix addressing capability, according to one embodiment of the present teachings.

[0020] [Figure 5F] FIG. 5F illustrates a voltage potential timing diagram showing one method of operating a matrix-addressable laser drive circuit in accordance with one embodiment of the present teachings.

[0021] [Figure 5G] FIG. 5G illustrates an electrical schematic of a matrix-addressable laser drive circuit configured with a high-side capacitance discharge circuit in a capacitor charging mode in accordance with one embodiment of the present teachings.

[0022] [Figure 5H] FIG. 5H illustrates an electrical schematic diagram of a matrix-addressable laser drive circuit configured with a high-side capacitance discharge circuit in a capacitor discharge mode for laser diodes 2, 2 (second row and second column) according to one embodiment of the present teachings, as described in relation to FIG. 5G.

[0023] [Figure 5I]FIG. 5I illustrates a voltage potential timing diagram showing the voltage potentials across capacitor C2 and across laser diodes 2, 2 in the second row and second column according to one embodiment of the present teachings.

[0024] [Figure 5J] FIG. 5J illustrates an electrical schematic of a matrix-addressable laser driver circuit configured with a low-side capacitance discharge circuit in a capacitor charging mode in accordance with one embodiment of the present teachings.

[0025] [Figure 5K] FIG. 5K illustrates an electrical schematic diagram of a matrix-addressable laser drive circuit configured with a low-side capacitive discharge circuit in a capacitor discharge mode for laser diodes 2, 2 (second row and second column) according to one embodiment of the present teachings, as described in relation to FIG. 5J.

[0026] [Figure 5L] FIG. 5L illustrates a voltage potential timing diagram showing the voltage potentials across capacitor C2 and across laser diodes 2, 2 in the second row and second column according to one embodiment of the present teachings.

[0027] [Figure 6] FIG. 6 illustrates an embodiment of a combined high-side and low-side GaN FET driver circuit for electrically driving laser diodes in a matrix-addressable laser drive circuit in a LIDAR system laser array in accordance with the present teachings.

[0028] [Figure 7] FIG. 7 illustrates a typical current-voltage curve for an embodiment of a semiconductor diode in a matrix-addressable laser drive circuit in accordance with the present teachings.

[0029] [Figure 8]FIG. 8 illustrates the voltages induced at nodes in a matrix during activation of single lasers in a two-dimensional array with row / column matrix addressability according to an embodiment of a matrix-addressable laser driver controller of the present teachings.

[0030] [Figure 9] FIG. 9 illustrates an embodiment of a LIDAR system array in accordance with the present teachings in which physical connections to the array allow for a denser layout for associated electronic circuitry on a printed circuit board (PCB).

[0031] [Figure 10] FIG. 10 illustrates a schematic diagram of an embodiment of a 2×2 laser array with matrix-addressable laser driver control circuitry in accordance with the present teachings, showing possible electrical current paths when one laser is activated.

[0032] [Figure 11] FIG. 11 illustrates a schematic diagram of an embodiment of a 2×2 laser array comprising a laser with a second diode in series with each laser diode in a row and column addressable laser drive circuit in accordance with the present teachings.

[0033] [Figure 12] FIG. 12 illustrates an embodiment of multiple diodes in series comprising a VCSEL array with additional diodes connected in series with each laser diode that is part of a separate carrier in accordance with the present teachings. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0034] FIG. 1A illustrates a schematic diagram of a solid-state LIDAR system 100 in which individual lasers in a transmitter array 102 can be fired independently. The system illustrated in FIG. 1A does not employ a flash transmitter that illuminates the complete system field of view all at once. Instead, each individual laser in the transmitter array 102 can be fired independently, and the optical beam emitted by each laser corresponds to a 3D projection angle that is tangent to only a portion of the total system field of view. One example of such a transmitter is described in detail in commonly assigned U.S. Patent Publication No. 2017 / 0307736A1, the entire contents of which are incorporated herein by reference.

[0035] The optical beams from the lasers in the laser array 102 share transmitter optics 104, which project an optical beam 106 onto a target 108 at a target plane 110. A portion of the light from the incident optical beam 106 is reflected by the target 108. A portion of the reflected optical beam 112 shares receiver optics 114. The detector array 116 receives the reflected light projected by the receiver optics 114. In various embodiments, the detector array 116 is solid state with no moving parts. The detector array 116 can have fewer individual detector elements than the individual lasers that the transmitter array 102 has.

[0036] The measurement resolution of the LIDAR system 100 is not determined by the size of the detector elements in the detector array 116, but instead by the number of lasers in the transmitter array 102 and the collimation of the individual optical beams. A processor (not shown) in the LIDAR system 100 performs a time-of-flight (TOF) measurement that determines the distance to a target 108 that reflects an optical beam 106 from a laser in the laser array 102 as detected at the detector array 116.

[0037] One feature of the system of the present teachings is that individual lasers and / or groups of lasers in the transmitter array 102 may be individually controlled. Another feature of the system of the present teachings is that individual detectors and / or groups of detectors in the detector array 116 may be individually controlled. This control provides various desired performance characteristics, including control of field of view, optical power levels, scanning, and / or other characteristics.

[0038] FIG. 1B illustrates a two-dimensional projection of the system field of view 150 of the LIDAR system of FIG. 1A. The fields of view of individual detectors in the detector array are represented by small squares 152. Illuminated measurement points associated with individual lasers in the transmitter are illustrated by circles 154. As an example of when one laser element in the array is activated, light from the laser impinges on individual detector fields of view in the overall field of view of the LIDAR system of FIG. 1A. This detector field of view that receives light is highlighted by a cross-hatch mark in a particular square 156, and the fields of view of measurement points from individual lasers are shown as particular dark circles 158, which correspond to specific individual lasers in the laser array.

[0039] From FIG. 1B it can be seen that the measurement points illustrated by the circles 158 fall within individual detectors whose fields of view are shown in squares 156 with cross-hatch patterns for identification. This figure illustrates that the 3D resolution of some embodiments of LIDAR systems is determined by the number of lasers since each laser corresponds to a specific angular projection angle that results in the size of the circle 154 at the target range and the relative sizes of the circle 154 and square 152, which represent the fields of view of the individual detector elements. Thus, various fields of view can be established by selectively activating and controlling specific individual or groups of lasers in the transmitter array to transmit laser pulses and / or specific individual or groups of detectors in the receiver array to convert optical signals received within the detector fields of view into electrical signals. One feature of the present teachings is an array drive control system capable of providing such selective device control for an array of laser devices capable of illuminating a target.

[0040] In some embodiments, the field of view of an individual detector in a detector array is the active area of ​​the detector. The size of an individual detector in an array is primarily determined by the electrical characteristics of the device. For example, as the size of the active area of ​​an avalanche photodiode (APD) detector increases, the capacitance of the detector increases, reducing the optical-electrical bandwidth of the device. The bandwidth of the APD must be kept high enough so as not to attenuate or distort the received signal. Typical values ​​for the optical / electrical (O / E) bandwidth and APD capacitance in a LIDAR system with a laser pulse width <10 nsec and rise / fall time of about 1 nsec are less than 350 MHz and 2 pF, respectively. In general, an array of detectors must be used to cover the full field of view of a LIDAR system while maintaining acceptable electrical detector performance. The overall physical size and dimensions of the array are determined by the required field of view and the specifications of the receiver's optical lens system.

[0041] FIG. 2 illustrates a perspective view of a known bottom-emitting VCSEL 200 structure that may be used in a LIDAR system in accordance with the present teachings. The area of ​​the light-emitting aperture 202 of the VCSEL 200 typically ranges from a diameter of a few microns for mW power operation to 100 microns or more in diameter for 100 mW and above CW power operation. The VCSEL 200 is fabricated on a substrate 204, which may be, for example, GaAs or a number of other semiconductor materials. An n-type distributed Bragg reflector (DBR) layer 206 is positioned on the substrate. An active region 208 is built on the n-type DBR layer 206, followed by an aperture, which may be made of an oxide material. A p-type DBR layer 212 is then grown on the active region. Typically, the p-type DBR layer 212 is highly reflective and the n-type DBR layer 206 is partially reflective, resulting in light output 214 from the bottom substrate side of the layer structure. The active region 208, oxide aperture 210, and p-type DBR layer 212 are formed in a mesa structure in the device shown. Top contact 216 and bottom contact 218 are used to provide electrical current to the active region and generate output light. Oxide aperture 210 provides current confinement to the active region 208. Top contact 216 is p-type and bottom contact 218 is n-type.

[0042] An emission aperture 202 is formed in the bottom contact 218, allowing output light 214 to emerge from the bottom substrate side of the bottom-emitting VCSEL 200. Note that only one emission aperture 202 is shown in FIG. 2 because FIG. 2 illustrates only one element of a multi-element VCSEL array. This type of VCSEL can be a standalone single element or can be part of a multiple element VCSEL that can be fabricated on a substrate 204 as a one or two dimensional array. The VCSEL contacts 216, 218 can be individually addressed and / or they can be electrically connected together in various configurations such that a group of VCSELs is addressed with a common electrical input signal. One feature of the present teachings is a system and method for controlling the activation of one or more VCSEL 200 devices in an array with appropriate drive signals for LIDAR system applications.

[0043] In some embodiments, the VCSEL arrays used in the solid-state LIDAR systems of the present teachings are monolithic, with the lasers all sharing a common substrate on which the lasers are integrated. A variety of common substrate types can be used. For example, the common substrate may be a semiconductor material. The common substrate may also include a ceramic material. In other embodiments, the 2D VCSEL array is assembled from a group of 1D bars or even individual dies.

[0044] In some embodiments, the VCSEL is a top-emitting VCSEL device. In other embodiments, the VCSEL is a bottom-emitting VCSEL. An individual VCSEL device may have either a single large light-emitting aperture, or may be formed from two or more subapertures within a larger effective light-emitting diameter. A group of subapertures that form a larger effective light-emitting area is sometimes referred to as a cluster.

[0045] FIG. 3 illustrates a schematic diagram of an embodiment of a 2D monolithic VCSEL array 300 with 256 separate laser emitters 302 for use in a solid-state LIDAR system in accordance with the present teachings. Each laser emitter 302 has an emission aperture of diameter "a" 304. Emission from each single laser emitter 302 substantially fills the complete emission aperture. Each laser emitter 302 thus generates a laser beam with an initial diameter "a", which is equal to the emission aperture diameter "a" 304. The laser emitters 302 are uniformly spaced horizontally with a spacing dx 306 and uniformly spaced vertically with a spacing dy 308. The overall size of the array measured from the center of the outermost laser is a distance Dx 310 in the horizontal direction and a distance Dy 312 in the vertical direction. The actual chip size will be slightly larger in dimensions than the distances Dx 310 and Dy 312. In various embodiments, the emitter 302 can generate beams with various shapes other than a circular emitter shape. For example, oval, square, rectangular, and various special shapes can be realized in various embodiments. In embodiments in which the lasers are arranged in a 2D array, the rows and columns of the lasers can be electrically driven in a row and column addressable manner.

[0046] Some embodiments of the present teachings utilize bottom-emitting, high-power arrays of VCSEL devices with a single large aperture per laser, such as the configuration shown in Figure 3. Other embodiments of the present teachings utilize top-emitting or bottom-emitting, high-power arrays of VCSELs with a total emitting area comprising subapertures. However, those skilled in the art will understand that the present teachings are not limited to any particular configuration of top- and bottom-emitting VCSEL devices and associated emitting apertures.

[0047] Two-dimensional VCSEL arrays can be used as building blocks for LIDAR systems in accordance with the present teachings to establish a platform that allows for small physical sizes for the transmitters. For example, a 2D VCSEL array with 256 high-power individual lasers can be built on a monolithic chip that is approximately 4 mm x 4 mm. Such a monolithic chip can be used with optics that are chosen to keep the physical dimensions as small as possible, for example, through the use of microlens arrays, shared lenses with dimensions less than 20 mm, or diffractive optics with a maximum dimension of approximately 20 mm.

[0048] However, the LIDAR system of the present teachings imposes certain requirements on the 2D VCSEL array. In particular, it is desirable for the 2D VCSEL array to allow simultaneous control of all VCSEL devices independently. In some operating modes of the LIDAR system of the present teachings, each VCSEL in the matrix is ​​fired at a different time. For such operation, the VCSEL array needs to be operated in a matrix addressable manner, where the lasers can be fired individually, but not simultaneously at all times.

[0049] 4 illustrates an exemplary cascaded two-port circuit model 400 for an embodiment of an individual semiconductor laser of a VCSEL array in accordance with the present teachings. The intrinsic laser junction is represented by the commonly known symbol of a diode 402. The active area of ​​the laser, which emits the laser light, is sandwiched between the pn junctions of the diodes. The circuit model 400 is d , and the electrical properties of the metal contacts 406. In addition, the circuit model 400 includes a parasitic element 408, which provides a parasitic pad current 408i p and parasitic chip current 410i p This includes pad resistive losses in the form of

[0050] In one embodiment, the solid-state LIDAR system of the present teachings uses VCSEL devices that are assembled using heterogeneous integration techniques. For example, these devices can be flip-chip bonded to silicon electronics, providing a highly compact way to connect to and electrically drive the VCSEL. See, for example, Plant et al., "256-Channel Bidirectional Optical Interconnect Using VCSELs and Photodiodes on CMOS," IEEE Journal of Lightwave Technology, Vol. 19, No. 8, August 2001. See also U.S. Patent No. 7,702,191, entitled "Electro-Optical Chip Assembly," and U.S. Patent No. 8,675,706, entitled "Optical Illuminator that Fire Devices in Parallel." However, these known heterogeneous integration techniques are primarily targeted to applications in the optical communications market, where concurrent operation of multiple channels is desired as a solution to increase data transmission throughput.

[0051] 5A illustrates an electrical schematic of an embodiment of a matrix-addressable laser drive circuit configured as a 2D laser array 500 with row / column matrix addressability according to one embodiment of the present teachings. For convenience, in this and the following figures, a diode symbol 502 is used here to represent a laser, but it should be understood that the laser is more accurately represented by the model 400 described in connection with FIG. 4, and such a model would be used in an actual design. Also, for convenience, only a 4×4 matrix of diodes is shown in the schematic 500, and the voltage and / or current drivers that drive the matrix-addressable laser drive circuit are not shown. However, it should be understood that in practice, the matrix of laser diodes is M×N, where M and N are arbitrary integers greater than or equal to 2, and in some embodiments, M and N are large numbers.

[0052] The matrix addressable laser driver circuit for the 2D laser array 500 is configured such that the VCSEL devices 502 are connected to anodes 504, 504', 504'', 504'''. The rows of the VCSEL devices 502 are connected by cathodes 506, 506', 506'', 506'''. This anode column and cathode row connection configuration illustrated in the schematic 500 allows individual lasers 502 to be turned on / off through row and column operation without the need for individual access to the cathodes and anodes of the single lasers 502.

[0053] 5B illustrates an embodiment of a matrix-addressable laser driver circuit configured as a voltage driver in which a single laser 502 in a 2D laser array 500 is activated using row / column matrix addressability in accordance with the present teachings. A power supply 548 applies a voltage potential 550 relative to ground 552 through an anode contact electrical bus 554 electrically connected to the column of anodes 504, 504', 504'', 504''' using a series of switches 556, 556', 556'', 556''', and a ground bus 552 connected to the row of cathodes 506, 506', 506'', 506''' using a series of switches 558, 558', 558'', 558'''. The power supply 548 applies a voltage potential 550 V with a desired voltage potential waveform. + 5. The column of anodes for that VCSEL that is activated and turned on is connected via switch 556' to a voltage potential 550 high enough to in turn bias the VCSEL diode 550. The row of cathodes 506' containing that VCSEL is connected via switch 558' to a ground bus 552 completing the circuit, thereby allowing current to flow through the VCSEL and activate the laser to emit light. The other cathodes and anodes are set to an "open" condition, and they are not provided with any specific voltage level by the power supply 548 by having open switches 556, 556'', 556''' and open switches 558, 558'', 558'''.

[0054] In an alternative embodiment of the circuit shown in FIG. 5B, the cathodes 506, 506″, and 506″″ are not “open” but instead are connected to a power supply 548 (or another power supply), which provides a voltage potential waveform with the voltage set to some predefined voltage level, which is less than V+, during operation. In other words, the potential on the ground bus 552 shown in FIG. 5B may not be ground potential, but instead be a voltage level set by the power supply 548, which is less than V+, such that the voltage potential 550 is applied to a predefined voltage, during operation. In these embodiments, the switches 556, 556″, 556′″, 558, 558″, 558′″ would toggle between the anode or cathode voltage potential 550 and a voltage source (not shown), which is set to this defined voltage level. This alternative embodiment may have performance advantages, such as reduced crosstalk. A more detailed circuit implementing this embodiment is described in connection with FIG. 5E.

[0055] One feature of the laser array controller of the present teachings is to use various laser driver circuits to provide the desired laser drive characteristics. In some embodiments, the power supply 548 that drives the laser generates high current short duration pulses. In these embodiments, the power supply 548 is designed to provide the required high current and short duration pulses. Also, the matrix can be operated by having the power supply 548 apply a potential waveform with a defined voltage (so-called voltage driver) or a current waveform with a defined current level (so-called current driver).

[0056] In some embodiments, the power supply 548 is configured to generate a waveform that reduces power dissipation when pulses are not being generated. This can be accomplished, for example, by using circuitry that provides a near or complete shutdown of the output of the power supply 548 during the pause times between the application of short duration pulses. In one such embodiment, the power supply activates the laser driver for a wake-up period before a short duration pulse is generated and then a pulse is generated. The power supply 548 generates a waveform shutdown for the time between pulses that begins after the pulse is fired. This waveform shutdown period precedes a wake-up period before a short duration pulse is generated again. Some power supplies also have a "lower power" state that is used to further reduce power consumption. For example, in a practical implementation, a controller within the power supply or a separate controller may execute a series of commands such as: (1) placing the laser driver power supply in a “low power state”, (2) placing the laser driver power supply in a “wake-up” mode, (3) turning the laser driver power supply output “on”, (4) turning the laser driver power supply output “off”, and (5) returning the laser driver to the “low power state”.

[0057] 5C illustrates an electrical schematic of a single matrix-addressable laser driver circuit 570 configured as a high-side current driver that may be used with a 2D laser array with row / column matrix addressability according to one embodiment of the present teachings. The high-side configured laser driver circuit 570 includes a field effect transistor (FET) 572 with the FET source coupled to a power supply potential V+ and the FET drain coupled to the anode of a laser diode 574. Drive current for the laser diode 574 is provided by a voltage controlled current source 576 such that the laser current is proportional to the drive voltage.

[0058] 5D illustrates an electrical schematic of a single matrix-addressable laser driver circuit 580 configured as a low-side current driver that may be used with a 2D laser array with row / column matrix addressability according to one embodiment of the present teachings. The laser driver 580 includes a voltage-controlled current source 582 having an input coupled to a power supply. The output of the voltage-controlled current source 582 is connected to the anode of a laser diode 584. A field effect transistor (FET) 586 has a source coupled to the anode of the laser diode 584 and a drain coupled to ground.

[0059] 5E illustrates an electrical schematic of a matrix-addressable laser driver circuit 590 configured with high-side voltage drivers 591 for columns, low-side voltage drivers 592 for rows, and switches that can be used to apply additional voltages to the rows, that can be used with a 2D laser array with row / column matrix addressability according to one embodiment of the present teachings. A voltage divider circuit 593 is used to set the voltage between the rows of the 2D laser array. The voltage divider circuit 593 is controlled by applying a charge signal to its FET gate. A laser diode 594 is shown with its associated parasitic capacitor.

[0060] The configuration of the matrix-addressable laser driver circuit 590 is similar to the alternative embodiment of the circuit shown in FIG. 5B, except that the cathodes of the laser diodes are not at ground potential during normal operation, but instead are at another potential. However, in this circuit, the addition of switch 593 allows for greater control of the voltage applied to the cathodes. In the matrix-addressable laser driver circuit 590 configuration shown in FIG. 5E, the cathodes of the laser diodes are at a potential determined by voltage divider 593, which is controlled by a charge signal applied to their FET gates. Operating the matrix-addressable laser driver circuit 590 such that the laser diodes are reverse biased such that their cathodes are at a potential other than ground can have numerous performance advantages. One such performance advantage is that crosstalk between the laser diodes can be significantly reduced.

[0061] Figure 5F illustrates a voltage timing diagram 599 showing one way of operating the matrix-addressable laser driver circuit 590 described in relation to Figure 5E. Waveforms are shown for a column drive signal C2 595 applied to a high side voltage driver 591, a row drive signal R2 596 applied to a low side voltage driver 592, and a charge signal 597 applied to a voltage divider 593.

[0062] An optical pulse is generated only when the column drive signal 595 and row drive signal 596 are both high. The pulse duration of the row drive signal determines the optical pulse width. The duty cycle depends on various operating parameters. For example, in one method of operation, the duty cycle of the optical pulse is 1%. The column drive signal 595 pulse is longer than the row drive signal 596 pulse. This prevents contention between the row and column pulses.

[0063] One important feature of the method and apparatus of the present teachings is that various laser driver circuit configurations and methods of operation reduce crosstalk and therefore increase performance. With reference to the matrix addressable laser driver circuit 590 described in connection with FIG. 5E, crosstalk can occur when a laser diode is indirectly activated through its associated parasitic capacitor and low-side driver via an electrical path. This undesirable result can be prevented in the configuration shown in FIG. 5E by charging the parasitic capacitor to a voltage +V, which sets the laser diode 594 in reverse bias. Thus, when the desired laser diode is activated, there should be no other laser diodes emitting light. However, biasing the laser diode 594 to a sustained reverse bias condition would result in an increased device failure rate and reduce overall device reliability. One solution according to the present teachings is to activate the low-side driver for the remainder of the duty cycle when the laser diode is not intentionally activated, discharging the parasitic capacitor of the laser diode. For example, activation would typically occur for about 99% off duration over a 1% duty cycle.

[0064] 5G illustrates an electrical schematic of a matrix-addressable laser driver circuit 620 configured with a high-side capacitance discharge circuit 622 in a capacitor charging mode. The driver circuit 620 is similar to the driver circuit 500 described in connection with FIG. 5A, but includes a high-side capacitance discharge circuit 622. In the capacitor charging mode, all of the high-side switches 624 and all of the low-side switches 626 are opened, thereby allowing the capacitors C1-C3 630 to charge, with a time constant, to the full potential applied to the driver circuit 620, which is shown as −V.

[0065] 5H illustrates an electrical schematic diagram of the matrix-addressable laser driver circuit 620 described in connection with FIG. 5G, but configured with a high-side capacitance discharge circuit 622 in a capacitor discharge mode for the laser diodes 2,2 (second row and second column). In the capacitor discharge mode for the laser diodes 2,2, both the high-side switch 624 and the low-side switch 626 are closed, causing the discharge of electrical current in path 632.

[0066] FIG. 5I illustrates a voltage potential timing diagram 635 showing the voltage potential across the capacitor C2 and across the laser diodes 2,2 in the second row and second column. The switches LS2 and HS2 are closed until an initial time t0. Before time t0, the potential C2+ is at ground potential and the potential C2- is at -V potential. At time t0, the switches LS2 626 and HS2 624 are closed, transitioning the potential C2- to ground potential and charging the potential C2+ to +V potential, which are reached at time t1. After the anodes of the laser diodes 2,2 charge to +V potential, the capacitor C2 discharges from the potential C2+ through the laser diodes 2,2, thereby generating an optical pulse. At time t2, the switches LS2 and HS2 are closed, initiating the conditions for a subsequent pulse. The result of this switching sequence results in the discharge control method generating an analog drive pulse whose power consumption is independent of the pulse width.

[0067] 5J illustrates an electrical schematic of a matrix-addressable laser driver circuit 640 configured with a low-side capacitive discharge circuit 642 in a capacitor charging mode. The driver circuit 640 is similar to the driver circuit 500 described in connection with FIG. 5A, but includes a low-side capacitive discharge circuit 642. In the capacitor charging mode, all low-side switches 644 and all high-side switches 646 are open, thereby allowing the capacitors C1-C3 626 to charge with a time constant to the full potential applied to the driver circuit 640, shown as the +V potential.

[0068] 5K illustrates an electrical schematic diagram of the matrix-addressable laser driver circuit 640 described in connection with FIG. 5J, but configured with a low-side capacitive discharge circuit 642 in a capacitor discharge mode for the laser diodes 2,2 (second row and second column). In the capacitor discharge mode for the laser diodes 2,2, both the high-side and low-side switches are closed, causing the discharge of electrical current in path 648.

[0069] FIG. 5L illustrates a voltage potential timing diagram 650 showing the voltage potential across the laser diodes 2,2 in the second row and second column across the capacitor C2. The switches LS2 and HS2 are initially opened. Before time t0, the switches LS2 and HS2 are opened so that the C2+ potential on the capacitor C2 is at +V potential and the C2- potential is at ground potential. At time t0, the switches LS2 and HS2 are closed, driving C2+ to ground and causing C2- to start charging from ground to -V. At time t1, the capacitor C2 starts discharging through the laser diodes 2,2 with a time constant, thereby generating an optical pulse in the laser diodes 2,2. At time t2, the switches LS2 and HS2 are closed, thereby initiating the conditions for the next pulse. This switching sequence also results in the discharge control method generating an analog drive pulse whose power consumption is independent of the pulse width.

[0070] 6 illustrates an embodiment of a combined high-side and low-side GaN FET driver circuit 600 for electrically driving laser diodes in a matrix-addressable laser drive circuit in a LIDAR system laser array in accordance with the present teachings. Such driver circuits are also referred to in the art as asymmetric on-off driver circuits. In various embodiments of a LIDAR system of the present teachings, the driver circuit 600 is connected to each of the column / row anode / cathode connections shown in FIG. 5A-B, where the driver circuit 600 is configured as an on-off driver, including a high-side drive electrical input 602 and a low-side drive electrical input 604. 5B and 6 more specifically, cell 560 in electrical schematic 500 is configured with driver circuit 600 in the following manner: Transistor 602, Q1 corresponds to switch 556, which connects voltage potential 550 to laser anode 504. Transistor 604, Q2 corresponds to switch 558, which connects ground 552 to laser cathode 506. A high side driver input 606 is electrically connected to the gate of transistor 602. A low side driver input 608 is electrically connected to the gate of transistor 604.

[0071] The asymmetric on-off driver circuit 600 is suitable for injecting well-controlled short duration high bias current pulses into the laser junction 610 to activate the laser and cause it to emit light. For a pulsed TOF LIDAR system, the ideal optical power output pulse should be in the few nanoseconds duration range and provide a high peak output power over that duration. In some embodiments, the asymmetric on-off driver circuit 600 is configured and operated such that the peak output power from the laser is at or at least below eye safety limits.

[0072] One feature of the present teachings is that the array drive control circuitry can be configured to optimize drive based on the characteristics of the current-voltage (IV) curve of the laser emitter. FIG. 7 illustrates an exemplary current-voltage curve 700 for an embodiment of a semiconductor diode 702 in a matrix-addressable laser drive circuit according to the present teachings. The current-voltage curve graphically represents the relationship between the electrical current flowing through the VCSEL device and the voltage applied across the VCSEL device. As shown in FIG. 7, when the laser diode 702 is biased forward, the voltage at the anode 704 is positive with respect to the cathode 706, and a forward or positive current 708 will flow through the diode 702. The current-voltage characteristic of the diode is non-linear, and for a positive current 708, the threshold voltage V th After passing 710, it nominally grows exponentially from zero.

[0073] When a laser diode is reverse biased, where the voltage at the cathode is positive with respect to the anode, the laser diode blocks current flow except for a very small leakage current. A laser diode is a diode that operates when the reverse voltage across the diode exceeds its breakdown voltage (V br 712). Once breakdown is reached, the current increases exponentially in the negative direction, and because the voltage and current are relatively high, the self-power dissipation is also relatively high, and the laser diode will consequently overheat and burn out. Light is generated from the laser under forward bias conditions.

[0074] The current-voltage behavior of each individual laser, combined with the method of controlling the laser drive circuitry and activating the individual lasers, significantly impacts the operational performance and reliability of the laser array. One feature of the matrix-addressable laser drive circuits of the present teachings is that they can be configured to minimize deleterious effects such as optical crosstalk. Optical crosstalk occurs when other lasers in the array, other than the single laser that is intentionally biased in sequence to be activated, are simultaneously biased in sequence due to current and / or voltage leakage from the electrical drive circuitry that supplies the activated laser. As a result, the other lasers also emit light, but this emission is undesirable. Such optical crosstalk situations have a deleterious effect on the performance of the LIDAR system by illuminating measurement points that were not intended to be illuminated and / or illuminating a target area larger than that intended.

[0075] FIG. 8 illustrates voltages induced at nodes in a matrix during activation of a single laser in a two-dimensional array with row / column matrix addressability according to an embodiment of a matrix-addressable laser driver controller 800 of the present teachings. The matrix-addressable laser driver controller 800 provides voltages to all nodes in the matrix, similar to the operation of the embodiment described in connection with FIG. 5B. For example, switch 802 connects the second column to a supply voltage 804, and switch 806 connects the second row of lasers to ground 808. This switch configuration induces a voltage V' 810 at the anodes of all rows, except for the row that is intentionally grounded by the connection of switch 806 to ground 808. Voltage V' 810 produces a voltage V'' 812 at the corresponding cathode of each laser in the array. The exact values ​​of voltages V' 810 and V'' 812 are functions of V+ 804 and the actual current-voltage curve for a specific laser diode.

[0076] If the value of the supply voltage 804 is less than the reverse breakdown voltage of the laser pulse, the absolute value of the forward voltage drop of the laser, i.e., V+, is V br and V th and there will be virtually no reverse current flowing through the laser diode. Such a condition improves device reliability. Also, when the voltage at the cathode is less than the threshold voltage, i.e., V <V th , there will be virtually no forward current flowing through the diodes on the same row as the active laser 814.

[0077] FIG. 9 illustrates an embodiment of a LIDAR system in which a VCSEL array chip 900 according to the present teachings is mounted on a carrier 902. The physical connections to the array allow for a denser layout for the associated electronics on a printed circuit board (PCB) substrate. A 16×16 array 904 of emitter clusters 906 with nine small apertures 908 of addressable VCSEL devices is shown. The carrier 902 has several electrical edge connectors 910, 910′ that connect with wire bonds 912, 912′ to row edges 914 or column edges 914′ of the array 904, respectively. The anode and cathode connections alternate the side of the electrical circuitry on which the PCB is connected to the VCSEL. This alternating pattern of connections results in a wider pitch on the PCB between row and column circuitry, which is advantageous for GaN-based VCSELs. The FETs can be placed more closely to the VCSEL array, resulting in a more compact layout for the electrical circuitry and allowing for a reduced physical footprint.

[0078] As described above, one aspect of the LIDAR system of the present teachings is the ability to individually activate each VCSEL located in a 2D matrix addressable configuration in a laser array with a minimum number of required electrical drivers. When an array is driven in a row / column by row addressable fashion, the minimum required number of drivers is equal to M+N, where M is the number of columns and N is the number of rows, respectively. In contrast, if each VCSEL device in the array had its own dedicated driver, the number of drivers would be much more than equal to M×N. For example, a 16×16 element VCSEL array using the matrix addressing described herein would require only 32 drivers, compared to 256 drivers if each VCSEL had its own dedicated driver.

[0079] It should be understood that with matrix addressing, simultaneous, completely independent operation of all lasers is not achievable. In other words, only certain lasers can be activated at a given time. However, this constraint is not significant for the LIDAR system described herein, since in typical operation, only one laser in a specific monolithic array is activated at a time, since there is no ambiguity about which measurement point in space is illuminated. Activating one laser in a specific monolithic array at a time is also useful for maintaining Class 1 eye safety.

[0080] It should further be understood that matrix addressing is well known in the electronics art. However, the use of aspects of matrix addressing in LIDAR systems, which require short duration, very high optical power pulses with low duty cycles, has not been previously known. A LIDAR system with 256 lasers as described, operating out to 100m (minimum time of 1 μsec between pulses), would have a duty cycle of only 0.002% with a 5 nsec pulse duration. Matrix addressing has typically been used to activate optically connected laser devices operating with relatively low peak power (mW compared to W) and relatively long duration pulses, with a duty cycle of about 50%. Under these conditions, the electrical drive requirements are very different from the operation of high power lasers in modern LIDAR applications.

[0081] For example, a pulsed TOF LIDAR system intended for operation over a 100m range using a 905nm wavelength laser would typically require optical pulses with peak powers in excess of 20 watts and pulse time durations of less than 10 nanoseconds. The corresponding drive voltages and currents on the individual lasers would be in the tens of volts and tens of amperes range, assuming the laser device has an efficiency of 1W / A under pulsed conditions. Of course, with voltages in excess of 10V applied to a matrix-addressable array, there is a significant possibility of undesirable electrical and optical crosstalk. There is also a significant possibility that the VCSEL devices in the matrix may be damaged or destroyed when reverse bias conditions exist with such voltages.

[0082] One of the primary factors affecting laser reliability is the device temperature, both average and transient. If the pulse energy is controlled to keep the device transient temperature rise low enough, the peak current and voltage values ​​can be relatively high as long as the pulse duration is short enough. Even in reverse bias conditions, where thermal runaway is a significant concern, the transient reverse current can be acceptable for reliability as long as the temperature rise near the junction is low enough. For example, assuming GaAs material properties with respect to specific heat and density, a 1 μJ pulse into a junction 2 microns thick and 100 microns in diameter would result in a temperature rise of about 9° C. for that junction. A 20V / 10A square pulse of 5 nsec duration equates to 1 μJ energy. The resulting transient temperature rise would be only about a few degrees and therefore likely not enough to degrade device reliability.

[0083] 10 illustrates a schematic diagram of an embodiment of a 2×2 laser array with matrix drive control circuitry 1000 according to the present teachings, showing possible electrical current paths when one laser 1002 is activated. For convenience, only a 2×2 matrix is ​​shown in this schematic diagram. It should be understood that the electrical behavior of a 2×2 matrix can be extended to larger M×N matrices.

[0084] FIG. 10 is presented to illustrate the potential problems resulting from the high voltages required for modern LIDAR applications. In FIG. 10, VCSEL device L22 1002 is intentionally biased in sequence to emit light because column 2 1004 is connected to a drive voltage bus 1006, V+, and row 2 1008 is connected to a ground bus 1010. Current flow through VCSEL device L22 is indicated by a solid line 1012 with an arrow in the schematic. Ideally, all other VCSEL devices 1014, 1016, 1018 in the matrix would be turned off by row 1 1020 and column 1 1022 being open and not connected to either the ground bus 1010 or the V+ bus 1006.

[0085] However, in addition to the primary path of solid line 1012, there is the possibility of a second current path. This second current path is indicated by dashed line 1024 with a directional arrow. When V+ on bus 1006 is applied to column 2 1004 by closing switches 1026, 1028, VCSEL device 1016 L12 will have V+ on bus 1006 applied to its anode and the voltage V' 1030 shown will be induced on its cathode to satisfy the condition that this path is nominally an open circuit, no current can flow. Note that when voltage V+ on bus 1006 is initially applied to column 2 1004, voltage V' 1030 may initially be zero. When this occurs, there is the possibility that a transient current with sufficient forward voltage of VCSEL devices L12 1016 and L22 1018 will cause them to emit undesired light, resulting in optical crosstalk. In this situation, crosstalk is additional unwanted light that is generated in the field of view that is not light generated by the VCSEL device L22 1002.

[0086] As a result of the cathodes being connected in a given row, voltage V' 1030 will also be applied to the cathode of VCSEL device L11 1014, which will immediately place VCSEL device L11 1014 in a reverse bias condition. Voltage V'' 1032 will be induced at the anode of VCSEL device L11 1014 to satisfy the current / voltage relationship. If voltage V' 1030 is less than the reverse breakdown voltage of L11 1014, the current flow will typically be less than 1 μA. The small current flow through L11 1014 will also flow through L21 1018, placing it under a forward bias condition. Voltage V'' will correspond to the forward IV curve of L21 1018. To avoid light being emitted from L21, the current through L21 1018 should be below the laser threshold current, which can be expected to be in the range of 10-100 mA for LIDAR applications.

[0087] However, if the voltage V' 1030 exceeds the breakdown voltage of the VCSEL device L11 1014, a much higher current will flow through the circuit. If this current exceeds the threshold current for L21 1018, light will be emitted in both the VCSEL device L12 1016 and the VCSEL device L21 1018, which would result in the occurrence of undesirable optical crosstalk. It should be understood that the voltage V' 1030 cannot be arbitrarily large, but instead must be constrained so that it is either always below the reverse breakdown voltage of the VCSEL devices, or at least the current flow through the corresponding path is not sufficient to cause light to be emitted from these two VCSEL devices L12 1016 and L21 1018.

[0088] Thus, one aspect of the present teachings is the recognition that it is desirable to constrain the voltage V' 1030 to be below the reverse breakdown voltage for the particular VCSEL device used for LIDAR applications to avoid undesirable optical crosstalk. In addition, sustained current flow under reverse bias conditions is undesirable as it can be a potential reliability issue for the laser diode depending on, among other factors, the time, the energy associated with the current flow, and the resulting heat rise within the laser diode.

[0089] Under operating conditions where voltage V' 1030 results in significant transient current flow through devices 1014, 1016, and 1018, the pulse energy should be low enough not to significantly affect reliability, and the transient temperature rise in these devices should be less than 20°C.

[0090] The use of many known VCSEL device structures for LIDAR applications would result in the generation of undesirable optical crosstalk because voltages of 10V to 80V are typically required to generate the high power optical pulses required for state-of-the-art LIDAR applications, while the reverse breakdown voltage for a typical VCSEL device with a single active area is in the range of 5V to 15V.

[0091] Therefore, another aspect of a LIDAR system using matrix addressable control circuitry in accordance with the present teachings to drive a laser array for LIDAR applications is the design of the VCSEL device itself with desirable operating specifications that reduce or eliminate optical crosstalk while having high reliability. That is, in accordance with the present teachings, the VCSEL device is specifically designed such that the operating conditions prevent undesirable optical crosstalk from affecting system performance. One way to prevent undesirable optical crosstalk is to fabricate the VCSEL device with a laser structure that can achieve relatively high reverse bias operating conditions without entering into dielectric breakdown conditions.

[0092] Vth or V br One possible laser structure that may increase the V or both includes multiple junctions in series in a VCSEL device. Laser structures with multiple junctions in series have been demonstrated in devices using tunnel junctions that separate the active junctions. It will be appreciated that many other similar laser structures with multiple junctions can also be used. The use of multiple junctions allows for a reduction in the V due to higher pulse voltages and currents. th , but the impact on efficiency and device performance is typically acceptable for this application.

[0093] 11 illustrates a schematic diagram of an embodiment of a 2×2 laser array comprising a laser having a second diode in series with each laser diode in a matrix addressable laser drive circuit 1100 in accordance with the present teachings. Similar to the schematic diagram of the 2×2 laser array 1000 described in connection with FIG. 10, the laser array 1100 includes VCSEL devices 1102, 1104, 1106, 1108 in a matrix. In addition, second diode devices 1110, 1112, 1114, 1116 are electrically connected in series with the laser diodes 1102, 1104, 1106, 1108. In some embodiments, the VCSEL devices 1102, 1104, 1106, 1108 are GaAs laser diodes and the second diode devices 1110, 1112, 1114, 1116 are silicon diodes. Similar to the schematic diagram of the 2x2 laser array 1000 described in connection with FIG. 10, there is a drive voltage bus 1118, a ground bus 1120, two columns 1122, 1124, and two rows 1126, 1128.

[0094] In operation, when the two switches 1132, 1134 are closed, the laser drive current flows through the path 1130 shown in bold in the direction indicated by the arrows. The second diodes 1110, 1112, 1114, 1116 will increase the forward voltage drop between the column and row anode and cathode connections. However, because typical forward voltage drops for GaAs laser diodes are about 2V to 3V and for silicon diodes about 1V to 2V, and because the matrix addressable laser driver circuit 1100 is designed to generate high optical power from each laser and therefore typically operates at drive voltages in excess of 10V, the additional forward voltage drop is not significant. Therefore, this additional forward voltage drop may not have a major impact on performance. In some embodiments, more than one additional diode is added in series with the laser diode.

[0095] Different embodiments use different diode types to implement the second diode 1110, 1112, 1114, 1116 connected in series or multiple additional diodes connected in series. For example, some embodiments stack the second diode 1110, 1112, 1114, 1116 monolithically with the individual lasers 1102, 1104, 1106, 1108 in the chip. The chip may be a GaAs chip similar to that shown in FIG. 2 but with an additional layer structure forming one or more series of diodes. In some embodiments, the stacked second diode is another active PN junction that generates optical gain, which beneficially increases the brightness of the VCSEL. In other embodiments, the stacked second diode is not optically active and therefore does not contribute to the generated light. In some embodiments, the stacked second diode is a photodiode. In some embodiments, the implementation of the stacked structure utilizes a tunnel junction to separate the two stacked diodes in order to keep the resistance of the overall structure relatively low.

[0096] VCSEL devices with multiple diode regions in a stack or cascade are known in the art. See, for example, "Bipolar Cascade VCSEL with 130% Differential Quantum Efficiency" (Annual Report 2000, Optoelectronics Department, University of ULM). Multi-diode cascade VCSEL structures have also been used to increase overall brightness. See, for example, U.S. Patent Publication No. US2015 / 0311673A1. VCSELs have also been fabricated with integrated photodiodes. See, for example, U.S. Patent No. 6,717,972. However, the prior art does not teach a matrix-addressable laser driver circuit 1100 configured for LIDAR applications using such structures.

[0097] Another VCSEL device structure in accordance with the present teachings that achieves relatively high reverse bias operating conditions without entering into breakdown conditions is connecting two or more VCSEL devices in series within a single laser emitter configuration, which can be accomplished by appropriate routing of the anode and cathode connections during the chip fabrication process.

[0098] High-power VCSEL lasers typically have more than one emitter aperture connected in parallel within a single emitter. For example, the VCSEL array described in connection with FIG. 9 is a 16×16 array 904 with nine small apertures 908 of addressable top-emitting VCSEL devices, with the individual apertures within each of the single emitters connected in parallel. A series of connected VCSEL devices has recently been developed for high-power applications, but optical crosstalk and forward voltage drop issues have not been considered. See, for example, U.S. Patent Publication No. 2019 / 0036308 A1, which describes a series of connected single-chip VCSEL devices. Such devices can be configured to reduce optical crosstalk in accordance with the present teachings.

[0099] Another VCSEL device structure according to the present teachings that achieves relatively high reverse bias operating conditions without entering a breakdown condition incorporates additional diodes into a mating substrate or IC bonded to the VCSEL device. Figure 12 illustrates a multiple diode in series embodiment 1200 comprising a VCSEL array 1202 in which additional diodes 1204 are connected in series with each laser diode 1206 that is part of a separate carrier 1208 according to the present teachings. In some embodiments, the carrier 1208 is an integrated circuit. For example, the integrated circuit can be an inexpensive silicon-based integrated circuit.

[0100] The carrier 1208 can be electrically connected to the array 1202 in a variety of ways. For example, the carrier 1208 can be electrically bonded to the array 1202 using bump bond connectors 1210. In the configuration shown in FIG. 12, a bottom-emitting VCSEL laser array 1202 is bonded to the carrier. The schematic shows only a single row of VCSEL emitters sharing a common cathode connection 1212 for convenience. The anode connections 1214 run perpendicular to the plane shown in the schematic. Each VCSEL diode 1206 is paired with a diode 1204 on the carrier 1208. It should be understood that additional diodes can be added in series in this and other configurations described herein to further reduce the possibility of optical crosstalk. With some configurations, more than two diodes are connected in series to achieve the desired reverse voltage induced in the matrix and to reduce or eliminate optical crosstalk. Equivalent

[0101] While the applicant's teachings are described in conjunction with various embodiments, it is not intended that the applicant's teachings be limited to such embodiments. On the contrary, the applicant's teachings encompass various alternatives, modifications, and equivalents, which may be made therein without departing from the spirit and scope of the present teachings, as will be appreciated by those skilled in the art.

Claims

[Claim 1] The invention as depicted in the drawings of this application.

Images