Semiconductor device

Abstract

To provide a technique capable of improving easiness of manufacture of a semiconductor device and suppressing protrusion of silicone gel filling the inside of a container body.SOLUTION: A semiconductor device comprises: a container body 1 including a metal base plate 11 and a case 12; an insulation substrate 2 disposed on the metal base plate 11 in the container body 1; a semiconductor element 3 loaded on the insulation substrate 2; and silicone gel 7 filling the inside of the container body 1 and sealing the insulation substrate 2 and the semiconductor element 3. A groove 8 having such a predetermined dimension that a capillary phenomenon can occur is provided in a portion positioned higher than a top face of the silicone gel 7 on an inner peripheral surface of the case 12.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device. [Background technology]

[0002] In the sealing process of the semiconductor device manufacturing process, the volume expansion of the silicone gel filled in the container occurs when the silicone gel is degassed and heated, causing a part of the silicone gel to creep up inside the container. Also, when the container is lidded, the silicone gel that has creeped up is pushed out to the top of the container, causing a silicone gel overflow defect.

[0003] For example, Patent Document 1 describes a technology for suppressing the protrusion of the resin sealant by forming a bent portion by bending an external lead-out terminal protruding from the upper surface of a resin sealant (equivalent to silicone gel), intentionally guiding the resin sealant by surface tension to make it creep up, and then depositing it on the bent portion of the external lead-out terminal. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2019-110217 A Summary of the Invention [Problem to be solved by the invention]

[0005] However, in the technology described in Patent Document 1, the effect of suppressing the protrusion of the silicone gel is largely dependent on the position and shape of the external lead-out terminal, making it difficult to adopt this technology for some types of semiconductor devices. Even if it could be adopted, it would be difficult to manufacture because it would be necessary to consider interference with other components such as wires.

[0006] Therefore, an object of the present disclosure is to provide a technique that can increase the ease of manufacturing a semiconductor device and prevent silicone gel filled in a container from spilling out. [Means for solving the problem]

[0007] The semiconductor device according to the present disclosure comprises a container body having a bottom and a side wall, an insulating substrate disposed on the bottom within the container body, a semiconductor element mounted on the insulating substrate, and a silicone gel filled within the container body and sealing the insulating substrate and the semiconductor element, and a groove having a predetermined dimension capable of generating capillary action is provided on a portion of the inner surface of the side wall that is located above an upper surface of the silicone gel. Effect of the Invention

[0008] According to the present disclosure, the silicone gel that creeps up inside the container enters the grooves by capillary action, so that the silicone gel filled in the container can be prevented from spilling out. In addition, when adopting this structure, there is no need to consider interference with other parts inside the container, so that the ease of manufacturing the semiconductor device can be improved. [Brief description of the drawings]

[0009] [Figure 1] 1 is a cross-sectional view of a semiconductor device according to a first embodiment. [Diagram 2] 1 is a top view of a semiconductor device according to a first embodiment. [Diagram 3] FIG. 11 is a cross-sectional view of a semiconductor device according to a second embodiment. [Figure 4] FIG. 11 is a cross-sectional view of a semiconductor device according to a third embodiment. [Diagram 5] FIG. 11 is a cross-sectional view of a semiconductor device according to a fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] <Embodiment 1> The first embodiment will be described below with reference to the drawings. Fig. 1 is a cross-sectional view of a semiconductor device according to the first embodiment. Fig. 2 is a top view of the semiconductor device according to the first embodiment.

[0011] As shown in FIG. 1, the semiconductor device includes a container 1, an insulating substrate 2, a semiconductor element 3, wires 5, terminals 6, and silicone gel .

[0012] The container body 1 includes a metal base plate 11 as a bottom portion, and a case 12 as a side wall portion. The case 12 is formed in a rectangular frame shape when viewed from above, and is attached to the peripheral portion of the metal base plate 11. A protrusion 12a that protrudes toward the inner periphery around the entire periphery is provided at the lower end of the inner periphery of the case 12, and the lower surface of the protrusion 12a is attached to the upper surface of the peripheral portion of the metal base plate 11. Also, an opening 13 that is rectangular when viewed from above and opens upward is formed on the inner periphery side of the case 12.

[0013] The insulating substrate 2 has an insulating layer 22, a metal pattern 21 provided on the lower surface of the insulating layer 22, and a metal pattern 23 provided on the upper surface of the insulating layer 22, and is bonded onto a metal base plate 11 in the container body 1 by a bonding material 4. The bonding material 4 is solder or the like.

[0014] The semiconductor element 3 is mounted on the insulating substrate 2 via a bonding material 4. The semiconductor element 3 is, for example, an IGBT (Insulated Gate Bipolar Transistor), a RC-IGBT (Reverse Conducting - IGBT), a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), or a FWD (Free Wheeling Diode). The material of the semiconductor element 3 may be ordinary silicon (Si), or a wide band gap semiconductor such as silicon carbide (SiC), gallium nitride (GaN), or diamond. When the material of the semiconductor element 3 is a wide band gap semiconductor, stable operation under high temperature and high voltage and high switching speed can be achieved. The number of semiconductor elements 3 may be one or more.

[0015] One end of terminal 6 is attached to case 12, and the other end of terminal 6 is joined to metal pattern 23 of insulating substrate 2. Wire 5 connects terminal 6 to metal pattern 23 of insulating substrate 2, and also connects semiconductor elements 3 to each other. Wire 5 also connects semiconductor elements 3 to terminal 6.

[0016] Silicone gel 7 is filled inside case 12 of container body 1 and seals insulating substrate 2 and semiconductor element 3.

[0017] Next, the features of the first embodiment will be described. As shown in FIG. 1, a groove 8 having a predetermined dimension capable of generating a capillary phenomenon is provided in a portion of the inner circumferential surface of the case 12 that is located above the upper surface of the silicone gel 7. A part of the silicone gel 7 creeps up inside the case 12 due to the volume expansion of the silicone gel 7 that occurs when the silicone gel 7 filled in the case 12 is degassed and heated. However, as described above, by providing the groove 8 in a portion located above the upper surface of the silicone gel 7, it is not necessary to consider interference with other parts in the container body 1, and the silicone gel 7 that creeps up inside the case 12 can enter the groove 8 by the capillary phenomenon.

[0018] Here, since the height of the silicone gel 7 that creeps up inside the case 12 is empirically between 1 mm and 2 mm, the groove 8 should be located on the inner surface of the case 12 in a portion that is located a few mm above the top surface of the silicone gel 7.

[0019] In order for the groove 8 to generate the capillary phenomenon, it is necessary that the groove 8 has a length in the height direction of 0.8 mm or more and 1.2 mm or less. As shown in FIG. 2, four grooves 8 are provided, and it is preferable that the four grooves 8 are provided at the four corners of the case 12. This is because the four corners of the case 12 have the greatest surface tension with the silicone gel 7 and are likely to affect the creeping up of the silicone gel 7. In order for the groove 8 to generate the capillary phenomenon more effectively, it is preferable that the dimensions of the groove 8 are a length in the height direction of 0.8 mm or more and 1.2 mm or less, a length in the horizontal direction of 0.8 mm or more and 1.2 mm or less, and a depth of 1.6 mm or more and 2.4 mm or less.

[0020] As described above, the semiconductor device according to the first embodiment includes a container body 1 having a metal base plate 11 and a case 12, an insulating substrate 2 arranged on the metal base plate 11 in the container body 1, a semiconductor element 3 mounted on the insulating substrate 2, and a silicone gel 7 filled in the container body 1 and sealing the insulating substrate 2 and the semiconductor element 3. A groove 8 having a predetermined dimension capable of generating a capillary phenomenon is provided in a portion of the inner peripheral surface of the case 12 that is located above the upper surface of the silicone gel 7. Specifically, the groove 8 has a height length of 0.8 mm or more and 1.2 mm or less.

[0021] Therefore, the silicone gel 7 that creeps up inside the case 12 of the container body 1 enters the groove 8 by capillary action, thereby preventing the silicone gel 7 filled in the container body 1 from spilling out. In addition, when this structure is adopted, there is no need to consider interference with other parts inside the container body 1, which increases the ease of manufacturing the semiconductor device.

[0022] The semiconductor device also has four grooves 8, and the case 12 is formed into a rectangular frame shape when viewed from above. The four grooves 8 are provided at the four corners of the case 12, and have a height length of 0.8 mm or more and 1.2 mm or less, a horizontal length of 0.8 mm or more and 1.2 mm or less, and a depth of 1.6 mm or more and 2.4 mm or less.

[0023] Therefore, the capillary action can be more effectively generated in the groove 8, and the effect of suppressing the silicone gel 7 filled in the container body 1 from spilling out can be improved.

[0024] <Embodiment 2> Next, a semiconductor device according to embodiment 2 will be described. Fig. 3 is a cross-sectional view of the semiconductor device according to embodiment 2. Note that in embodiment 2, the same components as those described in embodiment 1 are denoted by the same reference numerals and the description thereof will be omitted.

[0025] As shown in Fig. 3, in the second embodiment, the semiconductor device includes a lid 9 having a groove 9c instead of the groove 8 in the first embodiment. The lid 9 is attached to an attachment portion 12b protruding from the inner peripheral surface of the case 12 toward the inner peripheral side with a gap therebetween so as to cover the opening 13. The gap between the lid 9 and the attachment portion 12b is large enough to allow the silicone gel 7 to pass through. The attachment portion 12b may be provided continuously around the entire circumference of the inner peripheral surface of the case 12, or a plurality of attachment portions 12b may be provided intermittently around the entire circumference of the inner peripheral surface of the case 12.

[0026] The lid 9 is formed in a rectangular shape when viewed from above, and has an inner lid 9a and an outer lid 9b. The inner lid 9a constitutes the lower part of the lid 9 and faces the silicone gel 7. The outer lid 9b constitutes the upper part of the lid 9 and is located above the inner lid 9a. The inner lid 9a is formed smaller than the outer lid 9b, and the contour of the inner lid 9a when viewed from above is located on the inner circumferential side of the contour of the outer lid 9b when viewed from above. Specifically, the contour of the inner lid 9a when viewed from above is located 0.8 mm to 1.2 mm on the inner circumferential side of the contour of the outer lid 9b when viewed from above. As a result, a gap through which the silicone gel 7 can pass is formed between the inner peripheral surface of the case 12 and the inner lid 9a.

[0027] In addition, a groove 9c recessed toward the inner periphery is provided between the peripheral edge of the outer lid 9b and the peripheral edge of the inner lid 9a, and the groove 9c communicates with the gap between the inner peripheral surface of the case 12 and the inner lid 9a. The groove 9c is provided around the entire periphery between the peripheral edge of the outer lid 9b and the peripheral edge of the inner lid 9a, and has a depth of 0.8 mm to 1.2 mm and a height length equivalent to 24% to 36% of the thickness of the lid 9.

[0028] A part of the silicone gel 7 creeps up inside the case 12 due to the volume expansion of the silicone gel 7 that occurs when the silicone gel 7 filled in the case 12 is degassed and heated. The silicone gel 7 that creeps up inside the case 12 is compressed when the container body 1 is covered, and the silicone gel 7 sometimes leaks out. However, as described above, by providing the groove 9c between the peripheral portion of the outer lid 9b and the peripheral portion of the inner lid 9a, it is not necessary to consider interference with other parts in the container body 1, and the silicone gel 7 that is compressed when the lid is covered enters the groove 9c through the gap between the lid 9 and the mounting portion 12b and the gap between the inner peripheral surface of the case 12 and the inner lid 9a, so that the silicone gel 7 can be retained in the groove 9c.

[0029] As described above, the semiconductor device according to the second embodiment includes a container body 1 having a metal base plate 11, a case 12, and an opening 13 opening upward, an insulating substrate 2 arranged on the metal base plate 11 in the container body 1, a semiconductor element 3 mounted on the insulating substrate 2, a silicone gel 7 filled in the container body 1 and sealing the insulating substrate 2 and the semiconductor element 3, and a lid 9 covering the opening 13 of the container body 1. The lid 9 has an inner lid 9a facing the silicone gel 7 and an outer lid 9b located above the inner lid 9a, the contour of the inner lid 9a in a top view is located on the inner periphery side of the contour of the outer lid 9b in a top view, and a groove 9c recessed on the inner periphery side is provided between the peripheral portion of the outer lid 9b and the peripheral portion of the inner lid 9a.

[0030] Specifically, the contour of the inner lid 9a when viewed from above is located 0.8 mm to 1.2 mm inward from the contour of the outer lid 9b when viewed from above, and groove 9c is provided around the entire circumference between the peripheral edge of the outer lid 9b and the peripheral edge of the inner lid 9a, and has a depth of 0.8 mm to 1.2 mm and a height length equivalent to 24% to 36% of the thickness of lid 9.

[0031] Therefore, the silicone gel 7 that has crawled up inside the container body 1 is pressed and enters the groove 9c when the lid is attached to the container body 1, thereby preventing the silicone gel 7 filled in the container body 1 from spilling out. In addition, when this structure is adopted, there is no need to consider interference with other parts inside the container body 1, which increases the ease of manufacturing the semiconductor device.

[0032] <Embodiment 3> Next, a semiconductor device according to embodiment 3 will be described. Fig. 4 is a cross-sectional view of the semiconductor device according to embodiment 3. Note that in embodiment 3, the same components as those described in embodiments 1 and 2 are denoted by the same reference numerals and descriptions thereof will be omitted.

[0033] 4, in the third embodiment, the semiconductor device includes a lid 19 instead of the lid 9 in the second embodiment. The lid 19 is attached to an attachment portion 12b protruding from the inner peripheral surface of the case 12 to the inner peripheral side with a gap therebetween so as to cover the opening 13. The gap between the lid 19 and the attachment portion 12b is large enough to allow the silicone gel 7 to pass through.

[0034] The lid 19 is formed in a rectangular shape when viewed from above, and four bulging portions 19a protruding downward are provided on the underside of the four corners of the lid 19. Specifically, the four bulging portions 19a are provided in a range corresponding to 3% to 5% of the length of each side of the lid 19 from the end of each side of the lid 19. The end of the bulging portion 19a on the central side of the lid 19 has a shape that gently slopes toward the central portion of the underside of the lid 19, so that the silicone gel 7 compressed when the lid is attached can be guided to the central portion of the underside of the lid 19 as shown by the arrow in FIG. 4 while ensuring an escape route for the silicone gel 7 compressed when the lid is attached. In addition, the bulging portion 19a has the same thickness as the thickness of the lid 19. In other words, the four corners of the lid 19 where the bulging portions 19a are provided have a thickness twice as thick as the portions other than the four corners of the lid 19.

[0035] A portion of the silicone gel 7 creeps up inside the case 12 due to the volume expansion of the silicone gel 7 that occurs when the silicone gel 7 filled in the case 12 is degassed and heated. The silicone gel 7 that creeps up inside the case 12 is compressed when the lid is attached to the container body 1, and this sometimes causes the silicone gel 7 to protrude. However, by providing the bulging portions 19a on the underside of the four corners of the lid 19 as described above, it is not necessary to consider interference with other parts in the container body 1, and it is possible to guide the silicone gel 7 to the center of the underside of the lid 19 while securing an escape route for the silicone gel 7 that is compressed when the lid is attached.

[0036] As described above, the semiconductor device according to the third embodiment includes a container body 1 having a metal base plate 11, a case 12, and an opening 13 opening upward, an insulating substrate 2 arranged on the metal base plate 11 in the container body 1, a semiconductor element 3 mounted on the insulating substrate 2, a silicone gel 7 filled in the container body 1 and sealing the insulating substrate 2 and the semiconductor element 3, and a lid 19 covering the opening 13 of the container body 1. The lid 19 is formed in a rectangular shape when viewed from above, and four bulging portions 19a that bulge downward are provided on the lower surface of each of the four corners of the lid 19.

[0037] Specifically, the four bulges 19a are provided in a range corresponding to 3% to 5% of the length of each side of the lid 19 from the end of each side of the lid 19, and have the same thickness as the thickness of the lid 19.

[0038] Therefore, the silicone gel 7 that has crawled up inside the container body 1 is pressed when the container body 1 is covered and moves along the four bulges 19a to the center of the underside of the cover 19, thereby preventing the silicone gel 7 from spilling out. In addition, when this structure is adopted, there is no need to consider interference with other parts inside the container body 1, which can improve the ease of manufacturing the semiconductor device.

[0039] <Fourth embodiment> Next, a semiconductor device according to embodiment 4 will be described. Fig. 5 is a cross-sectional view of the semiconductor device according to embodiment 4. Note that in embodiment 4, the same components as those described in embodiments 1 to 3 are denoted by the same reference numerals and description thereof will be omitted.

[0040] 5, in the fourth embodiment, a lid 29 is provided instead of the lid 9 in the second embodiment. The lid 29 is attached to an attachment portion 12b protruding from the inner peripheral surface of the case 12 to the inner peripheral side with a gap therebetween so as to cover the opening 13. The gap between the lid 29 and the attachment portion 12b is large enough to allow the silicone gel 7 to pass through.

[0041] The lid 29 is formed in a rectangular shape when viewed from above, and four frame portions 29a protruding upward are provided on the upper surface of the peripheral portion of the lid 29 (more specifically, the upper surface of the four corners of the lid 29). Four grooves 29b recessed inward are provided on the outer edge portions of the four frame portions 29a. Since the four frame portions 29a are provided on the upper surface of the four corners of the lid 29, the four grooves 29b are also provided in portions corresponding to the four corners of the lid 29. The four grooves 29b are provided in a range equivalent to 3% to 5% of the length of each side of the lid 29 from the end of each side of the lid 29. The height direction length and depth of the four grooves 29b are 1% to 2% of the length of each side of the lid 29.

[0042] A part of the silicone gel 7 creeps up inside the case 12 due to the volume expansion of the silicone gel 7 that occurs when the silicone gel 7 filled in the case 12 is degassed and heated. The silicone gel 7 that creeps up inside the case 12 is compressed when the container body 1 is covered, and the silicone gel 7 sometimes leaks out. However, as described above, the four frame parts 29a are provided on the upper surface of the peripheral part of the cover 29, and the grooves 29b are provided on the outer edges of the four frame parts 29a, so that it is not necessary to consider interference with other parts in the container body 1, and the silicone gel 7 that is compressed when the cover is covered enters the grooves 29b through the gap between the cover 29 and the mounting part 12b and the gap between the inner peripheral surface of the case 12 and the cover 29, so that the silicone gel 7 can be retained in the grooves 29b.

[0043] As described above, the semiconductor device according to the fourth embodiment includes a container body 1 having a metal base plate 11, a case 12, and an opening 13 that opens upward, an insulating substrate 2 arranged on the metal base plate 11 in the container body 1, a semiconductor element 3 mounted on the insulating substrate 2, a silicone gel 7 filled in the container body 1 and sealing the insulating substrate 2 and the semiconductor element 3, and a lid 29 that covers the opening 13 of the container body 1. An upwardly protruding frame portion 29a is provided on the upper surface of the peripheral portion of the lid 29, and an inwardly recessed groove 29b is provided on the outer edge portion of the frame portion 29a. Specifically, four frame portions 29a each having a groove 29b are provided, the lid 29 is formed in a rectangular shape when viewed from above, the four grooves 29b are provided in a range corresponding to 3% to 5% of the length of each side of the lid 29 from the end of each side of the lid 29, and the height direction length and depth of the four grooves 29b are 1% to 2% of the length of each side of the lid 29.

[0044] Therefore, the silicone gel 7 that has crawled up inside the container body 1 is pressed and enters the groove 29b when the lid is attached to the container body 1, thereby preventing the silicone gel 7 filled in the container body 1 from spilling out. In addition, when this structure is adopted, there is no need to consider interference with other parts inside the container body 1, which increases the ease of manufacturing the semiconductor device.

[0045] It should be noted that the embodiments can be freely combined, and each embodiment can be modified or omitted as appropriate.

[0046] Various aspects of the present disclosure are summarized below as appendices.

[0047] (Appendix 1) a container body having a bottom and a sidewall; an insulating substrate disposed on the bottom of the container body; A semiconductor element mounted on the insulating substrate; a silicone gel filled in the container body and sealing the insulating substrate and the semiconductor element; A semiconductor device, wherein a groove having a predetermined dimension capable of generating capillary action is provided on an inner circumferential surface of the side wall portion, in a portion located above an upper surface of the silicone gel.

[0048] (Appendix 2) 2. The semiconductor device according to claim 1, wherein the groove has a height length of 0.8 mm or more and 1.2 mm or less.

[0049] (Appendix 3) The grooves are provided in four numbers, The side wall portion is formed in a rectangular frame shape when viewed from above, The semiconductor device of claim 1 or 2, wherein the four grooves are provided at the four corners of the side wall portion, and each groove has a height of 0.8 mm or more and 1.2 mm or less, a width of 0.8 mm or more and 1.2 mm or less, and a depth of 1.6 mm or more and 2.4 mm or less.

[0050] (Appendix 4) A container body having a bottom, a side wall, and an opening that opens upward; an insulating substrate disposed on the bottom of the container body; A semiconductor element mounted on the insulating substrate; a silicone gel filled in the container body and sealing the insulating substrate and the semiconductor element; a lid for covering the opening of the container body, The lid has an inner lid facing the silicone gel and an outer lid located above the inner lid, The contour of the inner lid in a top view is located on the inner circumferential side relative to the contour of the outer lid in a top view, A groove recessed toward an inner periphery is provided between a peripheral edge of the outer lid and a peripheral edge of the inner lid.

[0051] (Appendix 5) The contour of the inner lid in a top view is located 0.8 mm to 1.2 mm inward from the contour of the outer lid in a top view, The semiconductor device described in Appendix 4, wherein the groove is provided around the entire circumference between the peripheral edge of the outer lid and the peripheral edge of the inner lid, and has a depth of 0.8 mm or more and 1.2 mm or less and a height length equivalent to 24% or more and 36% or less of a thickness of the lid.

[0052] (Appendix 6) A container body having a bottom, a side wall, and an opening that opens upward; an insulating substrate disposed on the bottom of the container body; A semiconductor element mounted on the insulating substrate; a silicone gel filled in the container body and sealing the insulating substrate and the semiconductor element; a lid for covering the opening of the container body, The cover is formed in a rectangular shape when viewed from above, The semiconductor device has four bulging portions that bulge downward on the underside of the four corners of the lid.

[0053] (Appendix 7) The semiconductor device described in Appendix 6, wherein the four bulges are provided in a range equivalent to 3% to 5% of the length of each side of the lid from the end of each side of the lid, and have the same thickness as the thickness of the lid.

[0054] (Appendix 8) A container body having a bottom, a side wall, and an opening that opens upward; an insulating substrate disposed on the bottom of the container body; A semiconductor element mounted on the insulating substrate; a silicone gel filled in the container body and sealing the insulating substrate and the semiconductor element; a lid for covering the opening of the container body, An upwardly protruding frame is provided on the upper surface of the peripheral edge of the lid, The semiconductor device comprises an outer edge of the frame having an inwardly recessed groove.

[0055] (Appendix 9) The frame portion having the groove is provided in four pieces, The cover is formed in a rectangular shape when viewed from above, The four grooves are provided in a range corresponding to 3% to 5% of the length of each side of the lid from the end of each side of the lid, The semiconductor device according to claim 8, wherein the height and depth of the four grooves are between 1% and 2% of the length of each side of the lid. [Explanation of symbols]

[0056] 1 container body, 2 insulating substrate, 3 semiconductor element, 7 silicone gel, 8 groove, 9 lid, 9a inner lid, 9b outer lid, 9c groove, 11 metal base plate, 12 case, 13 opening, 19 lid, 19a bulge, 29 lid, 29a frame, 29b groove.

Claims

1. a container body having a bottom and a sidewall; an insulating substrate disposed on the bottom of the container body; A semiconductor element mounted on the insulating substrate; a silicone gel filled in the container body and sealing the insulating substrate and the semiconductor element; A semiconductor device, wherein a groove having a predetermined dimension capable of generating capillary action is provided on an inner circumferential surface of the side wall portion, in a portion located above an upper surface of the silicone gel.

2. The semiconductor device according to claim 1 , wherein the groove has a length in a height direction of not less than 0.8 mm and not more than 1.2 mm.

3. The grooves are provided in four numbers, The side wall portion is formed in a rectangular frame shape when viewed from above, 2. The semiconductor device according to claim 1, wherein the four grooves are provided at the four corners of the side wall portion, and each groove has a height of 0.8 mm or more and 1.2 mm or less, a width of 0.8 mm or more and 1.2 mm or less, and a depth of 1.6 mm or more and 2.4 mm or less.

4. A container body having a bottom, a side wall, and an opening that opens upward; an insulating substrate disposed on the bottom of the container body; A semiconductor element mounted on the insulating substrate; a silicone gel filled in the container body and sealing the insulating substrate and the semiconductor element; a lid for covering the opening of the container body, The lid has an inner lid facing the silicone gel and an outer lid located above the inner lid, The contour of the inner lid in a top view is located on the inner circumferential side relative to the contour of the outer lid in a top view, A groove recessed toward an inner periphery is provided between a peripheral edge of the outer lid and a peripheral edge of the inner lid.

5. The contour of the inner lid in a top view is located 0.8 mm to 1.2 mm inward from the contour of the outer lid in a top view, 5. The semiconductor device according to claim 4, wherein the groove is provided around the entire circumference between the peripheral edge of the outer lid and the peripheral edge of the inner lid, and has a depth of 0.8 mm to 1.2 mm and a height length equivalent to 24% to 36% of a thickness of the lid.

6. A container body having a bottom, a side wall, and an opening that opens upward; an insulating substrate disposed on the bottom of the container body; A semiconductor element mounted on the insulating substrate; a silicone gel filled in the container body and sealing the insulating substrate and the semiconductor element; a lid for covering the opening of the container body, The cover is formed in a rectangular shape when viewed from above, The semiconductor device has four bulging portions that bulge downward on the lower surface of the four corners of the lid.

7. 7. The semiconductor device according to claim 6, wherein the four bulges are provided in a range corresponding to 3% to 5% of the length of each side of the lid from the end of each side of the lid, and have the same thickness as the thickness of the lid.

8. A container body having a bottom, a side wall, and an opening that opens upward; an insulating substrate disposed on the bottom of the container body; A semiconductor element mounted on the insulating substrate; a silicone gel filled in the container body and sealing the insulating substrate and the semiconductor element; a lid for covering the opening of the container body, An upwardly protruding frame is provided on the upper surface of the peripheral edge of the lid, The semiconductor device comprises an outer edge of the frame having an inwardly recessed groove.

9. The frame portion having the groove is provided in four pieces, The cover is formed in a rectangular shape when viewed from above, The four grooves are provided in a range corresponding to 3% to 5% of the length of each side of the lid from the end of each side of the lid, 9. The semiconductor device according to claim 8, wherein the four grooves each have a height and a depth that are 1% to 2% of a length of each side of the lid.

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