Substrate treatment apparatus

Abstract

To avoid an occurrence of an abnormal discharge.SOLUTION: Provided is a substrate treatment apparatus that includes a treatment container having a ceiling part and a cathode part configured to supper a target. The ceiling part has an engaging part surrounding the target. The cathode part has a first shielding member having an attachment part attached to the engaging part, and a conductive sealing member for electrically connecting the ceiling part and the first shielding member.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] Patent document 1 proposes a sputtering apparatus in which at least the target side surface of the substrate holder is covered with a substance having a linear expansion coefficient close to that of the target material, and at least the target adhesion plate is equipped with a means for controlling the temperature to approximately the temperature reached by the sputtered film adhesion portion during sputtering.

[0003] Patent Document 2 provides a method for evacuation of a vacuum processing apparatus that includes a deposition shield in a vacuum vessel and generates plasma under vacuum evacuation to form a thin film on a substrate. The method for evacuation includes the steps of introducing an inert gas, heating the deposition shield with a lamp heater under the pressure of the inert gas, and evacuating the inside of the vacuum vessel with an evacuation means.

[0004] Patent Document 3 proposes a film formation apparatus having an adhesion prevention plate arranged at a position where particles released from a target adhere, and an adhesion prevention plate heating unit for heating the adhesion prevention plate. In the film formation apparatus, sputtering gas is introduced into a vacuum chamber from a sputtering gas introduction unit, the adhesion prevention plate is heated to a temperature higher than the film formation temperature, steam is released from the thin film attached to the adhesion prevention plate, a seed layer is formed on the substrate, the substrate is then heated to the film formation temperature, an AC voltage is applied from a power source to the target, the target is sputtered, and a dielectric film is formed on the substrate. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 5-195218 [Patent Document 2] JP 2010-84169 A [Patent Document 3] International Publication No. 2012 / 046705 Summary of the Invention [Problem to be solved by the invention]

[0006] The present disclosure provides a substrate processing apparatus capable of preventing the occurrence of abnormal discharge. [Means for solving the problem]

[0007] According to one aspect of the present disclosure, there is provided a substrate processing apparatus comprising a processing vessel having a ceiling portion, and a cathode portion installed on the ceiling portion and configured to sputter a target, the ceiling portion having an engagement portion around the target, the cathode portion having a first shield member having an attachment portion for attachment to the engagement portion, and a conductive seal member electrically connecting the ceiling portion and the first shield member. Effect of the Invention

[0008] According to one aspect, the occurrence of abnormal discharge can be avoided. [Brief description of the drawings]

[0009] [Figure 1] 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus according to an embodiment; [Diagram 2] Enlarged view of the cathode part. [Diagram 3] 3 shows an example of the configuration of a first shielding member. [Figure 4] 4 shows an example of the configuration of a second shielding member and a shielding cap. [Diagram 5] FIG. 13 is a diagram showing an example of a dedicated tool for attaching a shield cap. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0011] [Substrate processing equipment] The substrate processing apparatus 1 will be described with reference to Fig. 1. Fig. 1 is a schematic cross-sectional view showing an example of the substrate processing apparatus 1 according to an embodiment. The substrate processing apparatus 1 is a vacuum processing apparatus and a PVD (Physical Vapor Deposition) sputtering apparatus (film formation apparatus). The substrate processing apparatus 1 is a magnetron sputtering apparatus having a cathode 2 as a sputtering source on a ceiling (lid) 10a of a processing vessel 10.

[0012] The substrate processing apparatus 1 has a processing vessel 10 and a mounting table 20. The mounting table 20 mounts a substrate W thereon. The cathode unit 2 is located above the mounting table 20 and configured to sputter a target T installed on the ceiling unit 10a. Sputtered particles (film-forming atoms) emitted from the target T adhere (deposit) onto a surface of the substrate W, such as a semiconductor wafer, mounted on the mounting table 20, thereby performing a film formation process on the substrate W. A processing space 10s is defined by the sidewall of the processing vessel 10, the ceiling unit 10a, and the mounting table 20.

[0013] The cathode unit 2 has a generally pyramidal shape (e.g., generally quadrangular pyramidal shape, circular conical shape, etc.) on the ceiling unit 10a. The central axis Ax is located at the center of the processing vessel 10, passes through the top of the ceiling unit 10a, extends in the vertical direction, and is set to pass through the center of the mounting table 20. The center of the mounting surface 20a of the mounting table 20 coincides with the central axis Ax.

[0014] The processing vessel 10 is made of, for example, aluminum. The processing vessel 10 is connected to a ground potential. That is, the processing vessel 10 is grounded. The processing vessel 10 has a loading / unloading port 111 that communicates the processing space 10s with the outside of the processing vessel 10, and a gate valve 112 that opens and closes the loading / unloading port 111. When the gate valve 112 is open, the substrate processing apparatus 1 loads and unloads the substrate W through the loading / unloading port 111 by a transfer device (not shown). In addition, an exhaust device (not shown) such as a vacuum pump evacuates the processing vessel 10 so that the processing space 10s is in a desired vacuum (reduced pressure) state.

[0015] The mounting table 20 has an electrostatic chuck 21, a refrigeration device 30, and a power supply control unit 39. The electrostatic chuck 21 has a base material 23 made of an insulating material such as quartz, and a chuck portion 22 provided on the base material 23 and having a chuck electrode 21a embedded therein. That is, the electrostatic chuck 21 has a structure including the chuck portion 22 in which a sprayed film made of upper and lower insulating films and a metal film (chuck electrode 21a) therebetween is applied onto the base material 23 made of an insulating material such as quartz. The mounting table 20 is configured to be rotatable by a rotation device described later.

[0016] The substrate processing apparatus 1 has a slip ring 60 made of metal to supply a chucking voltage (direct current voltage, DC voltage) to the chuck electrode 21a. Thus, the power supply control unit 39 applies the chucking voltage supplied from the DC power supply 37 (direct current power supply) to the chuck electrode 21a via the slip ring 60 and the power supply line 63. This provides a predetermined potential to the chuck electrode 21a, and this configuration allows the substrate W to be electrostatically attracted and held on the mounting surface 20a.

[0017] The power supply control unit 39 applies a chucking voltage supplied from a DC power supply 37 to the chuck electrode 21a. In a state in which the substrate W is attracted and held on the mounting surface 20a, the power supply control unit 39 applies an RF bias voltage of a predetermined frequency (e.g., 400 kHz) supplied from an RF power supply 36 (high frequency power supply) to the electrostatic chuck 21. The RF power supply 36 is connected to a matching unit 35. The matching unit 35 functions to efficiently apply the RF bias voltage to the electrostatic chuck 21.

[0018] A refrigeration device 30 is provided below the electrostatic chuck 21. The refrigeration device 30 is configured by stacking a refrigerator 31 and a refrigeration heat medium 32. The refrigeration heat medium 32 is also called a cold drink. The refrigerator 31 holds the refrigeration heat medium 32 and cools the upper surface of the refrigeration heat medium 32 to an extremely low temperature. From the viewpoint of cooling capacity, the refrigerator 31 is preferably configured to utilize a GM (Gifford-McMahon) cycle. The refrigeration heat medium 32 is fixed on the refrigerator 31, and its upper portion is accommodated inside the processing vessel 10. The refrigeration heat medium 32 is formed of a material having high thermal conductivity (e.g., Cu) and the like, and has an outer shape of a substantially cylindrical shape. The center of the refrigeration device 30 coincides with the central axis Ax of the mounting table 20.

[0019] The refrigeration device 30 has a contact surface 30a that is in contact with or separated from the contacted surface 20b of the electrostatic chuck 21, and is configured to cool the electrostatic chuck 21. During cooling, the contacted surface 20b and the contact surface 30a are brought into contact with each other, and the electrostatic chuck 21 is cooled to an extremely low temperature. Thereafter, during processing of the substrate W, the contacted surface 20b and the contact surface 30a are separated, and the electrostatic chuck 21 is rotated.

[0020] For example, the refrigeration device 30 may come into contact with the contacted surface 20b and cool the electrostatic chuck 21 so that the temperature of the substrate W attracted and held on the mounting surface 20a becomes 150 K (Kelvin) or less. The refrigeration device 30 may also come into contact with the contacted surface 20b and cool the electrostatic chuck 21 so that the temperature of the substrate W becomes 210 K (Kelvin) or less. At least a part of the refrigeration device 30 is made of a metal such as copper and is connected to a ground potential. For example, the parts of the refrigeration device 30 other than the refrigerator 31 are made of copper.

[0021] The electrostatic chuck 21 is rotatably supported by a rotation device 40. The rotation device 40 includes a rotation drive device 41, a fixed shaft 45, a rotating shaft 44, a housing 46, magnetic fluid seals 47 and 48, and a stand 49.

[0022] The rotary drive device 41 is a direct drive motor having a rotor 42 and a stator 43. The rotor 42 has a substantially cylindrical shape extending coaxially with the rotary shaft 44, and is fixed to the rotary shaft 44. The stator 43 has a substantially cylindrical shape with an inner diameter larger than the outer diameter of the rotor 42. The rotary drive device 41 may be in a form other than a direct drive motor, and may be in a form including a servo motor and a transmission belt, for example.

[0023] The rotating shaft 44 has a generally cylindrical shape extending coaxially with the central axis Ax of the mounting table 20. A fixed shaft 45 is provided radially inside the rotating shaft 44. The fixed shaft 45 has a generally cylindrical shape extending coaxially with the central axis Ax of the mounting table 20. A housing 46 is provided radially outside the rotating shaft 44. The housing 46 has a generally cylindrical shape extending coaxially with the central axis Ax of the mounting table 20, and is fixed to the processing vessel 10.

[0024] A magnetic fluid seal 47 is provided between the outer circumferential surface of the fixed shaft 45 and the inner circumferential circle of the rotating shaft 44. The magnetic fluid seal 47 rotatably supports the rotating shaft 44 with respect to the fixed shaft 45, and seals the gap between the outer circumferential surface of the fixed shaft 45 and the inner circumferential circle of the rotating shaft 44, thereby separating the processing space 10s of the processing vessel 10, which can be depressurized, from the outside space of the processing vessel 10. A magnetic fluid seal 48 is provided between the inner circumferential surface of the housing 46 and the outer circumferential circle of the rotating shaft 44. The magnetic fluid seal 48 rotatably supports the rotating shaft 44 with respect to the housing 46, and seals the gap between the inner circumferential surface of the housing 46 and the outer circumferential circle of the rotating shaft 44, thereby separating the processing space 10s of the processing vessel 10, which can be depressurized, from the outside space of the processing vessel 10. Thus, the rotating shaft 44 is rotatably supported by the fixed shaft 45 and the housing 46.

[0025] Furthermore, the refrigeration heat medium 32 is inserted into the radially inner side of the fixed shaft 45. The stand 49 is provided between the rotating shaft 44 and the mounting table 20, and is configured to transmit the rotation of the rotating shaft 44 to the mounting table 20. With the above configuration, when the rotor 42 of the rotation drive device 41 rotates, the rotating shaft 44, the stand 49, and the electrostatic chuck 21 rotate in the X1 direction shown in FIG.

[0026] In addition, the refrigeration unit 30 is supported so as to be freely raised and lowered by a lifting device 50. The lifting device 50 has an air cylinder 51, a link mechanism 52, a refrigeration unit support part 53, a linear guide 54, a fixing part 55, and a bellows 56.

[0027] The air cylinder 51 is a mechanical device in which a rod moves linearly due to air pressure. The link mechanism 52 converts the linear motion of the rod of the air cylinder 51 into lifting and lowering motion of the refrigeration unit support part 53. The link mechanism 52 has a lever structure with one end connected to the air cylinder 51 and the other end connected to the refrigeration unit support part 53. This allows a large pressing force to be generated with a small thrust of the air cylinder 51. The refrigeration unit support part 53 supports the refrigeration unit 30. Furthermore, the movement direction of the refrigeration unit support part 53 is guided in the lifting and lowering direction by a linear guide 54.

[0028] The fixed part 55 is fixed to the lower surface of the fixed shaft 45. Between the lower surface of the fixed part 55 and the upper surface of the refrigeration device support part 53, a substantially cylindrical bellows 56 is provided to surround the refrigerator 31. The bellows 56 is a metal bellows structure that can expand and contract in the vertical direction. As a result, the fixed part 55, the bellows 56, and the refrigeration device support part 53 seal the gap between the inner peripheral surface of the fixed shaft 45 and the outer peripheral circle of the refrigeration heat medium 32, and separate the treatment space 10s of the treatment vessel 10, which can be depressurized, from the external space of the treatment vessel 10. In addition, the lower surface side of the refrigeration device support part 53 is adjacent to the external space of the treatment vessel 10, and the area of ​​the upper surface side of the refrigeration device support part 53 surrounded by the bellows 56 is adjacent to the treatment space 10s of the treatment vessel 10.

[0029] A slip ring 60 is provided below the rotating shaft 44 and the housing 46. The slip ring 60 includes a rotating body 61 including a metal ring and a fixed body 62 including a brush. The rotating body 61 has a substantially cylindrical shape extending coaxially with the rotating shaft 44, and is fixed to the lower surface of the rotating shaft 44. The fixed body 62 has a substantially cylindrical shape with an inner diameter slightly larger than the outer diameter of the rotating body 61, and is fixed to the lower surface of the housing 46. The slip ring 60 is electrically connected to the DC power source 37 and the RF power source 36. The slip ring 60 supplies the chuck voltage and the high frequency bias voltage supplied from the DC power source 37 and the RF power source 36 to the power supply line 63 via the brush of the fixed body 62 and the metal ring of the rotating body 61. With this configuration, the chuck voltage can be applied from the DC power source 37 to the chuck electrode 21a and the high frequency bias voltage can be applied from the RF power source 36 to the electrostatic chuck 21 without causing twisting or the like in the power supply line 63. The structure of the slip ring 60 may be a structure other than the brush structure, and may be, for example, a non-contact power supply structure or a structure containing mercury-free or conductive liquid.

[0030] The upper part of the processing vessel 10 has a cathode section 2 that is provided facing the mounting table 20 and is configured to sputter a plurality of targets T. The cathode section 2 has a target holding section 130, a target cover section 140, a gas supply section 150, and a magnet mechanism section 170. The target holding section 130 holds a plurality of targets T, which are cathode targets, at a position spaced above the mounting table 20. The substrate processing apparatus 1 shown in FIG. 1 has two target holding sections 130. However, the number of targets T may be two or more, and may be, for example, four targets T.

[0031] The target holding unit 130 has metal holders 131 that hold the multiple targets T, and insulating members 132 that support the holders 131 by fixing their outer peripheries.

[0032] The targets T held by each of the holders 131 are formed of a material having a substance for film formation. Each of the targets T has a rectangular flat plate shape. The substrate processing apparatus 1 may also include targets T made of different types of materials. For example, a multilayer film can be formed in the processing vessel 10 by switching between targets T made of multiple different materials and performing sputtering. In other words, the substrate processing apparatus 1 may perform simultaneous sputtering (co-sputtering) in which multiple targets are simultaneously formed into films. The substrate processing apparatus 1 according to one embodiment forms a silicon (Si) film or the like on a substrate W as an example of a film formation process.

[0033] Each of the holders 131 is formed in a rectangular shape that is slightly larger than the target T in a plan view. Each of the holders 131 is fixed to the inclined surface of the ceiling portion 10a via an insulating member 132. Since each of the holders 131 is fixed to the inclined surface of the ceiling portion 10a, each of the holders 131 holds the surfaces (sputtering surfaces exposed to the processing space 10s) of the multiple targets T in a state inclined with respect to the central axis Ax.

[0034] The power supply connected to the cathode section 2 may be either a DC (direct current) power supply or an RF (radio frequency) power supply, or may be a DC power supply and an RF power supply, but is not limited thereto. When the power supply connected to the cathode section 2 is only a DC power supply, the magnet 171 uses a DC magnet to perform sputtering. When the power supplies connected to the cathode section 2 are a DC power supply and an RF power supply, the magnet 171 uses a PCM (Point-Cusp-Magnetic Field) magnet to activate ionized particles and perform sputtering. In the following, a case where the power supply connected to the cathode section 2 has both a DC power supply 191 (direct current power supply) and an RF power supply 137 (radio frequency power supply) will be described as an example.

[0035] The target holding unit 130 electrically connects a DC power supply 191 to the targets T held by each of the holders 131. Each of the multiple DC power supplies 191 has one end connected to a ground potential and the other end connected to a low pass filter (LPF) 193, and applies a pulse wave of a negative DC voltage to the target T. Note that the DC power supply 191 may be a single power supply that selectively applies a negative DC voltage to each of the multiple targets T.

[0036] One end of the RF power supply 137 is connected to a ground potential, and the other end is connected to a power feeder line connecting the DC power supply 191 and the holder 131 via a matching device 136. Thus, the holder 131 is connected to the RF power supply 137 via the matching device 136. The RF power supply 137 superimposes an RF voltage on a DC voltage and applies it from the holder 131 to the target T. The matching device 136 functions to efficiently apply the RF voltage to the target T.

[0037] As a result, sputtering is performed by superimposing a pulse wave of a negative DC voltage and an RF voltage, and the sputtered particles can be ionized with high efficiency. Furthermore, by using the magnet 171 that generates a PCM, which is a local magnetic field, for plasma discharge, the ionization efficiency can be further improved. The ionized sputtered particles thus generated can be attracted to the electrostatic chuck 21 by the RF bias voltage, and the embedding accuracy of a Cu film or the like that is attached to the substrate W and formed as a film can be improved.

[0038] The RF power applied by the RF power source 137 has a frequency in the VHF band (e.g., 60 MHz) and is preferably 30 kW or less. The RF power source 137 may be a single power source that selectively applies an RF voltage to each of the multiple targets T. The low-pass filter (LPF) 193 is provided in the power feed line between the DC power source 191 and the holder 131, and functions as a high-frequency filter to prevent the RF voltage supplied from the RF power source 137 from flowing into the DC power source 191.

[0039] The cathode unit 2 has a metallic first shield member (adhesion prevention shield) 135 surrounding the outer periphery of the target T held by the holder 131. The first shield member 135 has an opening through which the target T is exposed, and is attached to the inclined surface of the ceiling unit 10a via an insulating member 132. That is, the insulating member 132 is provided between the processing vessel 10 connected to the ground potential and the first shield member 135. Therefore, the first shield member 135 and the holder 131 are not electrically connected to each other.

[0040] The pulse oscillator 192 is connected between the DC power supply 191 and the RF power supply 137. The pulse oscillator 192 synchronizes the pulse frequency of the DC voltage pulse wave from the DC power supply 191 with the frequency of the high frequency (RF voltage) from the RF power supply 137. This makes it possible to sputter the target T by superimposing the negative DC voltage and the RF voltage while reducing the power loss of both the negative DC voltage pulse wave and the RF voltage.

[0041] The magnet mechanism 170 applies a magnetic field to each of the targets T. By applying a magnetic field to each of the targets T, the magnet mechanism 170 induces plasma in the targets T. The magnet mechanism 170 has a magnet 171 (cathode magnet) for each of the multiple holders 131, and an operating unit 172 that operably holds the magnet 171. That is, the magnet 171 can be driven by the operating unit 172. In the example of FIG. 1, the magnet mechanism 170 has two magnets 171 and two operating units 172 that hold the two magnets 171, respectively, corresponding to the two holders 131.

[0042] The magnets 171 are formed in the same shape. Moreover, the magnets 171 generate magnetic forces of the same degree. Specifically, the magnets 171 are substantially rectangular in plan view. In a state held by the operating unit 172, the long sides of the magnets 171 extend parallel to the short side direction of the rectangular target T, while the short sides of the magnets 171 extend parallel to the longitudinal direction of the rectangular target T.

[0043] A permanent magnet can be applied to each of the magnets 171. The material constituting each of the magnets 171 is not particularly limited as long as it has an appropriate magnetic force, and examples of the material include iron, cobalt, nickel, samarium, and neodymium.

[0044] The operating units 172 that hold the magnets 171 respectively reciprocate the held magnets 171 along the longitudinal direction of the target T. That is, the magnets 171 are provided movably. Furthermore, the operating units 172 that hold the magnets 171 respectively move the held magnets 171 closer to and away from the target T. Specifically, each of the operating units 172 has a reciprocating mechanism 174 that holds the magnets 171 and reciprocates the magnets 171, and a contact / separation mechanism 175 that holds the reciprocating mechanism 174 and moves the reciprocating mechanism 174 closer to and away from the target T.

[0045] The target covering portion 140 includes a second shielding member 141 disposed in the processing vessel 10 and a supporting portion 142 that operably supports the second shielding member 141.

[0046] The second shield member 141 is provided between the multiple targets T and the mounting table 20. The second shield member 141 is formed in a cone shape that is approximately parallel to the inclined surface of the ceiling portion 10a of the processing vessel 10. The second shield member 141 can face the sputtering surfaces of the multiple targets T. The second shield member 141 also has an opening 141a corresponding to the target T. The opening 141a is an opening that is slightly larger than the target T, and moves when the second shield member 141 rotates.

[0047] The opening 141a is disposed to face one target T (selected target Ts) of the multiple targets T by rotation of the support part 142. By disposing the opening 141a to face the selected target Ts, the second shield member 141 exposes only the selected target Ts to the substrate W on the mounting table 20. The second shield member 141 prevents the other targets T (non-selected targets) from being exposed.

[0048] The support part 142 has a columnar rotating shaft 143 and a rotating part 144 that rotates the rotating shaft 143. The axis of the rotating shaft 143 overlaps with the central axis Ax of the processing vessel 10. The rotating shaft 143 extends along the vertical direction, and fixes the center (apex) of the second shield member 141 at its lower end. The rotating shaft 143 penetrates the center of the ceiling part 10a and protrudes to the outside of the processing vessel 10.

[0049] The rotating part 144 is provided outside the processing vessel 10, and rotates the rotating shaft 143 relatively to the upper end connector 145 that holds the rotating shaft 143 via a rotation transmission part (not shown). This causes the rotating shaft 143 and the second shield member 141 to rotate around the central axis Ax. Therefore, the target covering part 140 can adjust the circumferential position of the opening 141a to face the selected target Ts to be sputtered.

[0050] In the substrate processing apparatus 1, the target covering section 140 is used to perform sputtering while switching between the two targets. However, the target covering section 140 may not be provided and the two targets may be sputtered simultaneously.

[0051] The gas supply unit 150 is provided on the ceiling portion 10a and supplies an excitation gas. The gas supply unit 150 has a pipe 152 that distributes gas outside the processing vessel 10. The gas supply unit 150 also has, in order from the upstream side to the downstream side of the pipe 152, a gas source 153, a flow rate controller 154, and a gas introduction unit 155.

[0052] The gas source 153 stores an excitation gas (e.g., argon gas). The gas source 153 supplies the gas to the pipe 152. The flow rate controller 154 is, for example, a mass flow controller, and adjusts the flow rate of the gas supplied into the processing vessel 10. The gas introduction unit 155 introduces the gas from the outside to the inside of the processing vessel 10. The gas introduction unit 155 is a gas passage penetrating the ceiling portion 10a.

[0053] A gas exhaust unit (not shown) of the substrate processing apparatus 1 includes a vacuum pump and an adapter for fixing the vacuum pump to the bottom of the processing vessel 10. The gas exhaust unit reduces the pressure in the processing space 10s of the processing vessel 10.

[0054] The control device (not shown) is made up of a computer and has a CPU, an input device, an output device, a display device, a memory, etc. The CPU calls up a predetermined processing recipe stored in the memory or other storage medium, and causes the substrate processing apparatus 1 to perform a sputtering process based on the processing recipe.

[0055] [Shielding material] The substrate processing apparatus 1 is provided with an adhesion prevention device called a shield (first shield member 135, second shield member 141) inside the processing vessel 10 in order to avoid contamination of the substrate W and the cathode portion 2 of the sputtering source and to suppress the generation of particles.

[0056] However, in the ionized sputtering deposition performed in the substrate processing apparatus 1, the deposition time for one process is long, and the film attached to the shield becomes thick in a short time. The shield is exposed to plasma for a long time, which increases the thermal effect, and the repeated thermal expansion and contraction of the shield causes cracks and peeling in the film attached to the shield. This results in the generation of particles and contamination in the processing vessel 10.

[0057] The film attached to the shield is concentrated near the target T and substrate W, and when cracks or the like occur in the film, it grows from a thick film-like material into a sharp metal object, forming a structure that is prone to concentrating electric charge. As a result, in the cathode section 2, the surface of the metal object becomes charged up due to the electric charge concentrated on the metal object, causing an abnormal discharge (micro-arc discharge).

[0058] Therefore, in ionized sputtering film formation, it is important to prevent film peeling during sputtering. Also, in the cathode section 2, it is important to prevent the metal surface grown from the film attached to the shield from being charged and causing abnormal discharge. Furthermore, when fixing the second shield member 141, it is important to prevent the screw head from being exposed in the processing space 10s (discharge space) from causing abnormal discharge.

[0059] Therefore, in the substrate processing apparatus 1 according to this embodiment, the cathode section 2 is not negatively charged, and the cathode section 2 is configured to be less susceptible to reverse sputtering. Also, the cathode section 2 is configured to release negative charge, and the first shield member 135 is configured to be less difficult to attach. Furthermore, the heads of the screws fixing the second shield member 141 are not exposed to the processing space 10s, and a shield cap 160 is provided to hide the heads of the screws. Also, the shield cap 160 is configured to prevent film peeling even when a film is formed on the shield cap 160, and to prevent the shield cap 160 from loosening even when the shield cap 160 moves in accordance with the rotational movement of the second shield member 141.

[0060] The configurations of the first shield member 135, the second shield member 141, and the shield cap 160 of the cathode section 2 will be described with reference to Figs. 2 to 5. Fig. 2 is an enlarged view of the cathode section 2. Fig. 3 shows an example of the configuration of the first shield member 135. Fig. 4 shows an example of the configuration of the second shield member 141 and the shield cap 160. Fig. 5 shows an example of a tool for attaching the shield cap 160. Note that in Fig. 2, the DC power supply 191 and the RF power supply 137 that apply a DC voltage and a high frequency voltage to the target T, the gas supply section 150, and the periphery of the mounting table 20 are omitted.

[0061] (First shielding member) As shown in area A of Fig. 2, the first shield member 135 is attached to the ceiling portion 10a on the outer periphery of the target T. Fig. 3(a) is an example of area A of Fig. 2. A recess 10a1 is formed in the ceiling portion 10a at a position on the outer periphery of the target T. The recess 10a1 is provided so as to surround the outer periphery of the target T.

[0062] As shown in FIG. 2 and FIG. 3(a), the first shield member 135 has an attachment portion 135a and a shield body 135b. The attachment portion 135a has a protrusion 135a1 that can be inserted into the recess 10a1 of the ceiling portion 10a. The shield body 135b is an adhesion shield that surrounds the target T, and is attached to the ceiling portion 10a by the attachment portion 135a. The protrusion 135a1 has a width slightly smaller than the recess 10a1, and the depth from the top surface to the bottom surface of the recess 10a1 and the height of the protrusion 135a1 may be approximately the same length. The first shield member 135 is attached to the ceiling portion 10a by fitting the protrusion 135a1 of the attachment portion 135a into the recess 10a1, and is suspended from the ceiling portion 10a. At this time, the shield spiral 11 is installed between the bottom surface of the recess 10a1 and the upper surface of the protrusion 135a1. The shield spiral 11 is a spiral-shaped elastic body made of metal or the like, and electrically connects the ceiling portion 10a and the first shield member 135. Furthermore, two shield spirals 11 are installed between the opposing surfaces of the ceiling portion 10a and the mounting portion 135a on the inner and outer circumferential sides of the recessed portion 10a1 and the protruding portion 135a1.

[0063] 3(b) is a diagram showing an example of the BB cross section of FIG. 2, and is a plan view of three shield spirals 11. The three shield spirals 11 are provided in three rows so as to surround the target T between both sides of the recesses 10a1 and 10a1 of the ceiling portion 10a and both sides of the protrusions 135a1 and 135a1 of the mounting portion 135a.

[0064] The ceiling portion 10a is grounded. Therefore, the recess 10a1 and the protrusion 135a1 are in contact with each other, and the first shield member 135 can be reliably set to a ground potential by providing three shield spirals 11. This makes it possible to provide a hardware configuration that does not negatively charge the first shield member 135 and makes it difficult for the first shield member 135 to be reverse sputtered. In addition, by providing the recess 10a1 in the ceiling portion 10a and the protrusion 135a1 in the mounting portion 135a, the ground area can be increased. Furthermore, by arranging the three shield spirals 11 on the unevenness between the ceiling portion 10a and the mounting portion 135a, the ground area can be made wider. By making the ground area wider, it becomes easier to release the negative charge. This makes it possible to avoid the occurrence of abnormal discharge.

[0065] The configuration of the first shield member 135 on the outer periphery of the left target T in FIG. 2 is similar to the configuration of the first shield member 135 on the side of the right target T, and therefore will not be described here.

[0066] The recess 10a1 formed in the ceiling 10a is an example of the engagement portion 10A formed in the ceiling 10a at the outer periphery of the target T. The engagement portion 10A and the mounting portion 135a have recesses and / or protrusions that fit with each other. For example, the recess of the engagement portion 10A may fit with the protrusion of the mounting portion 135a, or the protrusion of the engagement portion 10A may fit with the recess of the mounting portion 135a, or both may be fitted. The shield spiral 11 is provided between the horizontal surface of the recess formed in the ceiling 10a and the horizontal surface of the protrusion of the mounting portion 135a, and / or between the horizontal surface of the protrusion formed in the ceiling 10a and the horizontal surface of the recess of the mounting portion 135a. The shield spiral 11 is an example of a conductive seal member that electrically connects the ceiling 10a and the first shield member 135. This ensures a larger contact area between the engagement portion 10A and the mounting portion 135a, making it easier to release negative charges from the first shield member 135 via the shield spiral 11, thereby preventing abnormal discharges from occurring.

[0067] 2, a lamp heater 180 is provided at a contact portion between the first shield member 135 and the ceiling portion 10a. A first flow path 181 is formed in the ceiling portion 10a near the lamp heater 180.

[0068] The first shield member 135 is thermally affected by the plasma generated from the excitation gas. Therefore, a lamp heater 180 and a first flow path 181 are arranged adjacent to the first shield member 135. As a result, the first shield member 135 is heated by the lamp heater 180, and the first shield member 135 is cooled (temperature controlled) by passing a temperature control medium through the first flow path 181. This can reduce the thermal effect of the plasma, and can make it difficult for a film attached to the first shield member 135 to peel off. Also, the process temperature inside the processing vessel 10 can be controlled to a range of room temperature to 200°C.

[0069] The lamp heater 180 and the first flow path 181 are an example of a first temperature adjustment mechanism provided on the ceiling portion 10a on the outer periphery of the first shield member 135. The lamp heater 180 is an example of a first heat source that performs heating. The first flow path 181 is an example of a flow path through which a temperature adjustment medium such as water or Galden flows.

[0070] (Second shielding member) Similarly, the second shield member 141 is also thermally affected by the plasma. Therefore, a sheathed heater 182 and a pipe forming a second flow path 183 are arranged adjacent to the second shield member 141. In this way, the second shield member 141 is heated by the sheathed heater 182, and the second shield member 141 is cooled (temperature controlled) by passing a temperature control medium through the second flow path 183. This makes it possible to reduce the thermal effect of the plasma, and makes it difficult for a film attached to the second shield member 141 to peel off. Also, the process temperature inside the processing vessel 10 can be controlled to a range of room temperature to 200°C.

[0071] The sheathed heater 182 and the second flow path 183 are an example of a second temperature adjustment mechanism provided in the second shield member 141. The sheathed heater 182 is an example of a second heat source that performs heating, and the second flow path 183 is an example of a flow path through which a temperature adjustment medium such as water or Galden flows. The first heat source and the second heat source are different heat sources, and the first flow path 181 and the second flow path 183 are different flow paths.

[0072] The lamp heater 180 may be fixed to the first shielding member 135. On the other hand, the sheathed heater 182 must be in complete contact with the second shielding member 141 in order to obtain thermal conduction, and therefore is bonded to the second shielding member 141 by brazing, welding, or the like. The pipe forming the second flow path 183 is also bonded to the second shielding member 141 adjacent to the lamp heater 180 by brazing, or the like.

[0073] The sheath heater 182 and the second flow path 183 are arranged in pairs on the outer periphery side and the center side of the second shield member 141. This makes it possible to eliminate temperature unevenness between the outer periphery side and the center side of the second shield member 141.

[0074] That is, the second temperature adjustment mechanism has pipes that form the multiple second flow paths 183 and multiple sheathed heaters 182. At least one of the pipes that form the multiple second flow paths 183 and at least one of the multiple sheathed heaters 182 may be provided adjacent to each other on the outer periphery of the second shield member 141. Furthermore, the pipes that form the rest of the multiple second flow paths 183 and the rest of the multiple sheathed heaters 182 may be provided adjacent to each other in the center of the second shield member 141.

[0075] (Shield Cap) The shield cap 160 is configured so that the heads of the screws that fix the second shield member 141 are not exposed to the processing space 10s, thereby preventing abnormal discharge. The configuration of the shield cap 160 will be described with reference to Fig. 4. Fig. 4 shows an enlarged cross section of the shield cap 160 and its surroundings.

[0076] The shield cap 160 has a cylindrical cap body 160a with a bottom and a flange portion 160b, and is hollow. The flange portion 160b has a horizontal portion 160b1 attached from the opening of the cap body 160a toward the outside, and an inclined portion 160b2 extending from the horizontal portion 160b1. The support portion 142 penetrates the shaft portion 162, and screws the shaft portion 162 supporting the support portion 142 to the second shield member 141. The shield cap 160 covers the screw 161 so that the screw 161 is not exposed to the processing space 10s.

[0077] Further, the shield cap 160 fixes the support portion 142 by attaching the tip of the support portion 142 to a rotating shaft connecting nut 163. The shield cap 160 is fixed to the pressing plate 164 by screws 165 while pressing the rotating shaft connecting nut 163 from inside the shield cap 160 with a pressing plate 164.

[0078] The surface of the second shield member 141 and the surface of the shield cap 160 are blasted on the entire surface except the screw seat surface. The gap S between the surface of the second shield member 141 facing the shield cap 160 and the surface of the inclined portion 160b2 of the flange portion 160b is controlled to an extent that the second shield member 141 and the shield cap 160 do not rub against each other. The shield cap 160 is fastened to the support portion 142 by rotating the shield cap 160 using a dedicated tool. For example, as shown in FIG. 5, the dedicated tool 166 is a combination of a torque wrench 166a and a clamp 166c for fastening. The dedicated tool 166 is composed of a torque wrench 166a, an extension bar 166b, and a clamp 166c, and the shield cap 160 is rotated and fastened by the torque wrench 166a while the clamp 166c grips the shield cap 160. The fastening torque of the shield cap 160 is 5 Nm or less.

[0079] The gap S between the second shield member 141 and the shield cap 160 shown in FIG. 4 is preferably as small as possible so long as it is possible to avoid rubbing between the second shield member 141 and the shield cap 160, and is 2 mm or less.

[0080] Furthermore, flange portion 160b has a horizontal portion 160b1 corresponding to the horizontal back surface 141b of second shield member 141, in correspondence with the cone shape of second shield member 141, and an inclined portion 160b2 corresponding to the inclined surface 141c continuing from the horizontal back surface 141b of second shield member 141. Gap S is the gap between inclined surface 141c and inclined portion 160b2.

[0081] The length of the inclined portion 160b2 of the flange portion 160b is preferably 9.5 mm in order to prevent the membrane from wrapping around inside the shield cap 160.

[0082] The second shield member 141 is exposed to plasma and is grounded. Therefore, the second shield member 141 is made of aluminum, which is a material with as good thermal conductivity as possible. The shield cap 160 is made of stainless steel, taking into consideration thermal conductivity and strength. The shield cap 160 may be made of stainless steel coated with a thermally conductive material. The support portion 142 and the pressing plate 164 are made of stainless steel.

[0083] With this configuration, the screws 161, 165 that fix the second shield member 141 and the support portion 142 are not exposed to the processing space 10s, which is the discharge space. As a result, it is possible to prevent abnormal discharge from occurring due to exposure of the metal screws 161, 165 to plasma.

[0084] [Other water routes] 2 and 4, other water passage paths will be described. The substrate processing apparatus 1 has two water passage paths in the processing vessel 10 and the support part 142. The first system is a water passage path that has an opening at the bottom of the processing vessel 10 for inputting (IN) and outputting (OUT) a temperature control medium such as water, and circulates the temperature control medium in a flow path (third flow path 188) formed in the wall of the bottom, side, and ceiling part 10a of the processing vessel 10. The temperature control medium (cooling water or hot water) that flows through the third flow path 188 returns to a chiller unit (not shown), is temperature-controlled, and circulates within the third flow path 188.

[0085] The second system is a water passage that circulates a temperature control medium in a flow path (fourth flow path 189) having an outward path and a return path formed inside the support part 142. The outward path and the return path are connected at the tip of the support part 142. The temperature control medium (cooling water or hot water) that flows through the fourth flow path 189 returns to the chiller unit, is temperature-controlled, and circulates through the fourth flow path 189. With this configuration, the temperatures of the temperature control medium flowing through the third flow path 188 and the fourth flow path 189 can be separately controlled, thereby separately controlling the temperatures of the support part 142 and the inside of the processing vessel 10.

[0086] As described above, in the substrate processing apparatus 1 according to this embodiment, the cathode 2 is not negatively charged, and the cathode 2 is less likely to be reverse sputtered. In addition, the cathode 2 is easily released from the negative charge, and the first shield member 135 is less difficult to attach. Furthermore, the screws for fixing the second shield member 141 are covered with the shield cap 160 so that they are not exposed to the processing space 10s. This makes it possible to prevent abnormal discharge. Furthermore, by controlling the tightening of the shield cap 160 using the dedicated tool 166, the shield cap 160 does not loosen even when the second shield member 141 moves in accordance with its rotation, and the shield cap 160 does not peel off even when a film is formed on the shield cap 160.

[0087] The substrate processing apparatus according to the presently disclosed embodiment should be considered as illustrative and not restrictive in all respects. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be configured in other ways without any contradiction, and can be combined without any contradiction. [Explanation of symbols]

[0088] 1. Substrate Processing Equipment 2 Cathode section 10 Processing vessel 10a Ceiling (lid) 10s Processing space 20 Placement table 39 Power supply control section 130 Target holder 131 Holder 37, 191 DC power supply 36, 137 RF power supply 135 First shielding member 140 Target cover 141 Second shield member 142 Support part 150 Gas supply section 160 Shield Cap 170 Magnet mechanism 171 Magnet W substrate

Claims

1. A processing vessel having a ceiling portion; a cathode portion disposed on the ceiling portion and configured to sputter a target; Equipped with the ceiling portion has an engagement portion around the target, The cathode portion is a first shield member having an attachment portion that is attached to the engagement portion; a conductive seal member that electrically connects the ceiling portion and the first shield member; A substrate processing apparatus comprising:

2. The engaging portion and the mounting portion have a recess and / or a protrusion that fit into each other, The conductive seal member is provided between the recess of the engagement portion and the protrusion of the mounting portion, and / or between the protrusion of the engagement portion and the recess of the mounting portion, which are to be fitted together. The substrate processing apparatus according to claim 1 .

3. A rotatable support portion penetrating the center of the ceiling portion; a second shield member supported by the support and having an opening corresponding to the target when the support rotates; a shield cap configured to prevent a screw that fixes the support portion and the second shield member from being exposed to a processing space. The substrate processing apparatus according to claim 1 .

4. a first temperature adjustment mechanism provided on the ceiling portion around the first shield member; The substrate processing apparatus according to claim 1 .

5. The first temperature adjustment mechanism has a first heat source that performs heating and a first flow path through which a temperature adjustment medium flows. The substrate processing apparatus according to claim 4 .

6. The first flow path and the first heat source are disposed adjacent to each other. The substrate processing apparatus according to claim 5 .

7. A second temperature control mechanism is provided on the second shield member. The substrate processing apparatus according to claim 3 .

8. The second temperature adjustment mechanism has a second heat source that performs heating and a second flow path through which a temperature adjustment medium flows. The substrate processing apparatus according to claim 7 .

9. The second flow path and the second heat source are disposed adjacent to each other. The substrate processing apparatus according to claim 8 .

10. The second flow path and the second heat source are bonded to the second shield member. The substrate processing apparatus according to claim 8 .

11. a third flow path formed in a wall of the processing vessel and a fourth flow path formed in the support portion; The third flow path and the fourth flow path are different. The substrate processing apparatus according to claim 3 .

12. the second temperature adjustment mechanism includes a plurality of the second flow paths and a plurality of the second heat sources; At least one of the second flow paths and at least one of the second heat sources are provided adjacent to each other on an outer periphery of the second shield member, the remainder of the second flow passages and the remainder of the second heat sources are adjacent to each other and provided in a center of the second shield member. The substrate processing apparatus according to claim 8 .

13. The shield cap has a flange portion, The gap between the second shield member and the flange portion is 2 mm or less. The substrate processing apparatus according to claim 3 .

14. The shield cap is made of stainless steel. The substrate processing apparatus of claim 13 .

15. The shield cap and the second shield member are subjected to a blast treatment. The substrate processing apparatus of claim 13 .

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