Substrate processing apparatus

Abstract

To suppress an increase in size of a substrate processing apparatus in accordance with an increase in throughput.SOLUTION: A substrate processing apparatus comprises: a carry in / out block that includes a container mounting part in which a plurality of containers constructed to be able to housing substrates are mounted; and a processing block that is provided so as to be adjacent to the carry in / out block in a width direction, and includes a plurality of processing units that execute the processing to the substrate. The carry in / out block includes a delivery block in which delivery units for delivering the substrates are laminated provided on the processing block side, for delivery in a space from the processing block, and includes a first carry mechanism that carries the substrate between the container mounting part and the delivery block. The processing block further includes a second carry mechanism that carries the substrate between the delivery block and the processing unit. The first carry mechanism includes a support part that supports the substrate. The substrate supported by the support part is constructed so that the delivery block can pass in a depth direction crossing the width direction in a plan view.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] The coating and developing apparatus disclosed in Patent Document 1 forms a coating film including a resist film on a substrate carried by a carrier into a carrier block, transports the substrate to an exposure device via an interface block, develops the exposed substrate returned via the interface block, and transfers the substrate to the carrier block. This coating and developing apparatus includes a processing block. The processing block includes a unit block for forming a coating film and a unit block for developing processing stacked on the unit block for forming a coating film. Each unit block includes a liquid processing unit, a heating unit, a cooling unit, and a transport means for transporting the substrate between the units. In addition, the unit block is formed with a substrate transport area for connecting the carrier block and the interface block. The area of ​​the transport area adjacent to the carrier block is a substrate transfer area. A shelf unit including one or more transfer stages is provided in this transfer area. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2006-203075 A Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure prevents an increase in size of a substrate processing apparatus that accompanies an increase in throughput. [Means for solving the problem]

[0005] One aspect of the present disclosure is a substrate processing apparatus comprising: an input / output block having a container mounting section on which a plurality of containers configured to accommodate a substrate are mounted; and a processing block arranged adjacent to the input / output block in the width direction and having a plurality of processing units that perform processing on the substrate, wherein the input / output block has a transfer block on the processing block side for transferring the substrate therebetween, the transfer block having a stacked transfer unit for transferring the substrate therebetween, the transfer block further having a first transport mechanism that transports the substrate between the container mounting section and the transfer block, the processing block further having a second transport mechanism that transports the substrate between the transfer block and the processing units, the first transport mechanism having a support section that supports the substrate, and the substrate supported by the support section is configured to be able to pass through the transfer block in a depth direction that intersects with the width direction in a planar view. Effect of the Invention

[0006] According to the present disclosure, it is possible to suppress an increase in size of a substrate processing apparatus that accompanies an increase in throughput. [Brief description of the drawings]

[0007] [Figure 1] 1 is an explanatory diagram showing an outline of the configuration of a coating and developing apparatus as a substrate processing apparatus according to an embodiment of the present invention; [Diagram 2] 2 is an explanatory diagram showing the outline of the configuration of the front side of the coating and developing apparatus in FIG. [Diagram 3] FIG. 2 is an explanatory diagram illustrating a schematic outline of the configuration of a processing block. [Figure 4] 4 is an explanatory diagram of a configuration of a processing block side in a cassette block. FIG. [Diagram 5] FIG. 4 is an explanatory diagram of the size of a cassette block. [Figure 6] FIG. 2 is an explanatory diagram of a configuration of an interface block. [Figure 7] 13 is an explanatory diagram of a modified example of a delivery block of the cassette block. FIG. [Figure 8]FIG. 13 is an explanatory diagram of a specific example of an upper layer of an upper sub-block of a processing block. [Figure 9] FIG. 13 is an explanatory diagram of a specific example of an upper layer of an upper sub-block of a processing block. [Figure 10] FIG. 13 is an explanatory diagram of a specific example of an upper layer of an upper sub-block of a processing block. [Figure 11] FIG. 13 is an explanatory diagram of a specific example of an upper layer of an upper sub-block of a processing block. [Figure 12] FIG. 13 is an explanatory diagram showing an outline of the configuration of a first modified example of a processing block. [Figure 13] 13 is an explanatory diagram showing the outline of the configuration of the front side of the processing block of FIG. 12. [Figure 14] FIG. 2 is an explanatory diagram illustrating a schematic outline of the configuration of a divided block. [Figure 15] FIG. 4 is an explanatory diagram of a configuration of an intermediate block. [Figure 16] FIG. 13 is an explanatory diagram showing an outline of the configuration of a second modified example of a processing block. [Figure 17] 17 is an explanatory diagram of a configuration of an intermediate block included in the processing block of FIG. 16. [Figure 18] FIG. 13 is an explanatory diagram showing an outline of the configuration of a processing block according to a third modified example. [Figure 19] 18 is an explanatory diagram of a configuration of a divided block included in the processing block of FIG. 17. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] In the photolithography process in the manufacturing process of semiconductor devices and the like, a predetermined process is performed to form a resist pattern on a substrate such as a semiconductor wafer (hereinafter referred to as "wafer"). The predetermined process includes, for example, a resist coating process in which a resist liquid is applied onto the substrate to form a resist film, an exposure process in which a substrate is exposed to a predetermined pattern, and a development process in which the exposed resist film is developed. Among these processes, the resist coating process, development process, and the like are performed in a coating and developing apparatus, which is a substrate processing apparatus equipped with various processing units that perform various processes on the substrate and a transport unit that transports the substrate.

[0009] Substrate processing apparatuses are required to have a high throughput. To achieve this, it is necessary to increase the number of processing units mounted on the substrate processing apparatus. However, increasing the number of units mounted in this way results in an increase in the size of the apparatus. Specifically, this increases the floor space occupied by the apparatus.

[0010] Therefore, the technology according to the present disclosure suppresses an increase in size of a substrate processing apparatus that accompanies an increase in throughput.

[0011] Hereinafter, a substrate processing apparatus according to the present embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are denoted by the same reference numerals, and redundant description will be omitted.

[0012] <Coating and developing equipment> Fig. 1 is an explanatory diagram showing an outline of the configuration of a coating and developing apparatus as a substrate processing apparatus according to this embodiment. Fig. 2 is an explanatory diagram showing an outline of the configuration of the front side of the coating and developing apparatus in Fig. 1. Fig. 3 is an explanatory diagram showing a schematic outline of the configuration of a processing block described below. Note that in Fig. 2, a storage unit 50 described below is not shown.

[0013] As shown in Figures 1 and 2, the coating and developing apparatus 1 includes a cassette block 10 as a loading / unloading block, a processing block 11, and an interface block 12 as another block, and is connected to an exposure device (not shown). The cassette block 10, the processing block 11, and the interface block 12 are arranged in this order in a width direction (Y direction in the figure), which is one horizontal direction, and are connected together. An exposure device is connected to the interface block 12 on the opposite side to the processing block 11. The exposure device performs exposure processing on a wafer W.

[0014] A cassette C, which is a container capable of accommodating wafers W, is carried in and out of the cassette block 10. The cassette block 10 has a cassette mounting table 20 as a container mounting section on which a plurality of cassettes C are mounted. In the cassette block 10, the cassette mounting table 20 is provided, for example, at an end on one side in the width direction (the negative side in the Y direction in the figure), that is, at an end on the opposite side to the processing block 11 in the width direction.

[0015] A plurality of cassettes C are placed on the cassette placement stage 20 so as to be lined up in the depth direction (X direction in the figure). Specifically, a plurality of (e.g., four) placement plates 21 are provided on the cassette placement stage 20 so as to be lined up in a row in the depth direction, and a cassette C can be placed on each placement plate 21 when the cassette C is carried in or out of the coating and developing apparatus 1. The depth direction is a direction intersecting the width direction (Y direction in the figure) in a plan view, and specifically, is a direction perpendicular to the width direction in a plan view.

[0016] The mounting plate 21 includes a lift plate (not shown). The lift plate lifts and lowers a plurality of wafers W in a cassette C mounted on the mounting plate 21 all at once, moves them into the cassette mounting table 20, and enables the transfer of the wafers W between the first transfer mechanism 40 described below. The lift plate is lifted and lowered between an upper first position and a lower second position by, for example, a lift mechanism (not shown). The first position is a position where the wafer W on the lift plate is located inside the cassette C, and the second position is a position where the wafer W is transferred between the lift plate and the first transfer mechanism 40. Depending on the diameter of the wafer W, it may be required by standards that the wafer W be transferred between the cassette C and the first transfer mechanism 40 via the lift plate as described above.

[0017] The cassette block 10 also has a transfer block 30. The transfer block 30 is formed by stacking transfer units 31 for transferring the wafer W. In the cassette block 10, the transfer block 30 is provided on the processing block 11 side in the width direction (positive side in the Y direction in the figure) for transferring the wafer W to and from the processing block 11. Specifically, the transfer block 30 is provided in a portion of the cassette block 10 adjacent to a second transfer space K2 (described later) of the processing block 11 in the width direction (Y direction in the figure).

[0018] Furthermore, the cassette block 10 has a first transfer mechanism 40 that transfers the wafer W between the cassette mounting table 20 and the delivery block 30. The first transfer mechanism 40 has a fork 41 as a support part that supports the wafer W. The fork 41 is configured to be freely movable in the vertical direction (Z direction in the figure), a direction around the vertical axis, a depth direction (X direction in the figure), and a width direction (Y direction in the figure). The first transport mechanism 40 is configured so that the wafer W supported by the forks 41 can pass through the transfer block 30 in the depth direction (X direction in the figure) in a plan view, as indicated by the thick black arrow in FIG.

[0019] As will be described later, the cassette block 10 also has a storage section 50. Furthermore, the cassette block 10 is provided with a first blowing unit 60 (see FIG. 4), as will be described later. The detailed structure of the cassette block 10 will be described later.

[0020] The processing block 11 has a plurality of various processing units for carrying out predetermined processing such as development processing, and is provided adjacent to the cassette block 10 in the width direction (Y direction in the figure).

[0021] The processing block 11 further includes a second transport mechanism 70. The second transfer mechanism 70 transfers the wafer W between the delivery block 30 and the processing units in the processing block 11. The second transfer mechanism 70 may transfer the wafer W between the processing units in the processing block 11. In this example, the second transfer mechanism 70 also transfers the wafer W between the processing units in the processing block 11 and a delivery block 110 (to be described later) of the interface block 12. The second transfer mechanism 70 transfers the wafer W to and from the delivery block 30 in the width direction (Y direction in the figure).

[0022] 3, in the processing block 11, sub-blocks BL each provided with a second transport mechanism 70 are stacked vertically, and in the example shown in the figure, two sub-blocks BL are stacked vertically. Hereinafter, the upper sub-block BL may be referred to as upper sub-block BL1, and the lower sub-block BL may be referred to as lower sub-block BL2.

[0023] A second transport space K2 in which a second transport mechanism 70 is provided is formed in the center of the depth direction (X direction in the figure) of each sub-block BL so as to extend in the width direction (Y direction in the figure) in a plan view.

[0024] In addition, in each sub-block BL, a plurality of processing units are provided along both the vertical direction (Z direction in the figure) and the width direction (Y direction in the figure) in each space on the front side (negative side of the X direction in the figure) of the second transport space K2 and the rear side (positive side of the X direction in the figure).

[0025] The front side (negative side in the X direction in the figure) of the second transfer space K2 in the upper sub-block BL1 is divided into an upper layer BL11 and a lower layer BL12. As shown in Fig. 2, each of the layers BL11 and BL12 has a plurality of developing units DEV (two in the example shown) provided along the width direction (Y direction in the figure).

[0026] The developing unit DEV performs a developing process on the exposed wafer W, and develops the resist film on the wafer W to form a resist pattern. Each developing unit DEV has a spin chuck 81 that holds and rotates the wafer W, and a cup 82 that surrounds the wafer W on the spin chuck 81 and collects processing liquid that has been scattered or otherwise dispersed from the wafer W. As shown in Fig. 1, a nozzle 83 is also provided that ejects a processing liquid, such as a developing liquid, onto the wafer W held by the spin chuck 81. For example, one nozzle 83 is provided for each of layers BL11 and BL12, and is shared between the developing units DEV of the same layer.

[0027] As shown in Fig. 2, the front side of the second transfer space K2 in the lower sub-block BL2 is also divided into an upper layer BL21 and a lower layer BL22, similar to the upper sub-block BL1. However, in the lower sub-block BL2, a plurality of resist film forming units COT (two in the example shown) are provided in each of the layers BL21 and BL22 along the width direction (Y direction in the figure).

[0028] The resist film forming unit COT performs a resist film forming process on the wafer W to form a resist film on the wafer W. Each resist film forming unit COT has a spin chuck 81 and a cup 82, similar to the developing unit DEV. Also, a nozzle 83 is provided which is shared between the resist film forming units COT in the same layer. Note that, from the nozzle 83 for the resist film forming unit COT, a resist liquid for forming a resist film is discharged as a processing liquid.

[0029] 1 and 3, a plurality of heat-treating units HT (four in the example of FIG. 3) are provided along the vertical direction (Z direction in the figure) at the top of the back side (positive side of the X direction in the figure) of the second transfer space K2 in each sub-block BL, and a plurality of heat-treating units HT (three in the example of FIG. 1) are also provided along the width direction (Y direction in the figure). Each heat-treating unit HT performs, for example, a heating process on the wafer W. Each heat-treating unit HT may perform both a heating process and a cooling process on the wafer W. A storage section 90 is provided at the bottom of the second transfer space K2 in each sub-block BL. The storage section 90 stores electrical components for the heat-treating units HT (such as drivers for controlling the heat-treating units HT).

[0030] Furthermore, in the processing block 11, a utility unit U is provided below the lower sub-block BL2. The utility unit U functions as, for example, a storage unit, and stores members (such as a storage bottle for the resist liquid) related to the supply of the resist liquid to the resist film forming unit COT.

[0031] Furthermore, in the treatment block 11, a filter 102 of a second blowing unit 100 is provided for each sub-block BL. The second blowing unit 100 supplies clean air to the second transfer space K2 from above. The second blowing unit 100 includes a filter 102 and a fan unit 101 (see FIG. 6).

[0032] The fan unit 101 sends gas to the filter 102. Specifically, for example, the fan unit 101 takes in gas into the fan unit 101 and sends the taken-in gas to the filter 102 via a duct (not shown). The fan unit 101 is shared between the sub-blocks BL. The fan unit 101 may be disposed on the interface block 12. That is, the fan unit 101 may be stacked on the interface block 12.

[0033] The filter 102 purifies the gas sent from the fan unit 101, that is, filters out particles in the gas, and blows out the purified gas (clean gas) downward toward the second transfer space K2. The filter 102 is provided above the corresponding second transfer space K2.

[0034] In this manner, a part of the second blowing unit 100 (specifically, the fan unit 101) is overlapped on the interface block 12.

[0035] The interface block 12 is provided between the processing block 11 and an exposure device (not shown), and relays the wafer W between them. 1 and 2, the interface block 12 has a transfer block 110. The transfer block 110 is formed by stacking transfer units 111 for transferring a wafer W. In the interface block 12, the transfer block 110 is provided on the processing block 11 side in the width direction (negative side in the Y direction in the figure) for transferring a wafer W between the interface block 12 and the processing block 11. Specifically, the transfer block 110 is provided in the interface block 12 at a position adjacent to the second transfer space K2 of the processing block 11 in the width direction (Y direction in the figure).

[0036] The interface block 12 also has a third transport mechanism 120 that transports the wafer W between the delivery block 110 and the exposure device. The third transport mechanism 120 has a fork 121 that supports the wafer W. The fork 121 is configured to be freely movable in the vertical direction (Z direction in the figure), a direction around the vertical axis, the depth direction (X direction in the figure), and the width direction (Y direction in the figure).

[0037] Furthermore, a third blowing unit 130 is provided for the interface block 12, as described below. The detailed configuration of the interface block 12 will be described later.

[0038] The coating and developing apparatus 1 also has a control unit 200 that controls the components of the coating and developing apparatus 1, including the first to third transport mechanisms 40, 70, and 120. The control unit 200 is a computer equipped with a processor such as a CPU and a memory, and has a program storage unit (not shown). The program storage unit stores a program including commands for controlling processing by the coating and developing apparatus 1. The program may be recorded in a computer-readable storage medium H and installed from the storage medium H into the control unit 200. The storage medium H may be temporary or non-temporary. The control unit 200 may be stored in a storage unit 51 or a storage unit 52 (to be described later) of the cassette block 10.

[0039] <Cassette Block 10> Next, a more detailed configuration of the cassette block 10 will be described with reference to Figures 1 and 2, and using Figures 4 and 5. Figure 4 is an explanatory diagram of the configuration of the cassette block 10 on the processing block 11 side. Figure 5 is an explanatory diagram of the size of the cassette block 10.

[0040] The cassette block 10 has the first transport mechanism 40 as described above. As shown in FIG. 4, the first transport mechanism 40 has a first guide portion 42 and a second guide portion 43 in addition to the fork 41.

[0041] The first guide portion 42 guides the movement of the fork 41 in the vertical direction (Z direction in the figure). Specifically, the first guide portion 42 moves the lifting body 44 along the first guide portion 42, for example. The fork 41 is supported on the lifting body 44 via a rotating body 45. The rotating body 45 rotates on the lifting body 44. The fork 41 advances and retreats horizontally relative to the rotating body 45.

[0042] The second guide portion 43 guides the movement of the first guide portion 42 in the depth direction (X direction in the figure). Specifically, the second guide portion 43 guides the movement of the first guide portion 42 as follows. That is, as shown in Figures 1 and 2, the second guide portion 43 guides the movement of the first guide portion 42 in the depth direction in a region adjacent to the cassette mounting table 20 in the width direction (Y direction in the figure) in a plan view in the first transport space K1 in which the first transport mechanism 40 is provided.

[0043] The cassette block 10 satisfies the following condition (A) in the width direction (Y direction in the drawing). (A) As shown in Figure 5, the size (width) W1 of the gap h1 between the cassette mounting table 20 and the transfer block 30 is larger than the length (width) W2 of the first guide portion 42 and smaller than the length (width) of the fork 41.

[0044] In addition, "the length of fork 41" in condition (A) means the size applied in the width direction (Y direction in the figure) of fork 41 when moving in the depth direction (X direction in the figure).

[0045] As described above, in the cassette block 10, the first transfer mechanism 40 is configured to allow the wafer W supported by the forks 41 to pass through the delivery block 30 in the depth direction (X direction in the figure) in a plan view. During such passing, the cassette block 10 satisfies the above condition (A), and therefore the first guide portion 42 can pass through the gap h1.

[0046] In addition, when the above condition (A) is satisfied, when the fork 41 moves in the depth direction (X direction in the figure), the first guide portion 42 can pass through the gap h1, but the wafer W supported by the fork 41 cannot pass through the gap h1.

[0047] The first transfer mechanism 40 transfers the wafer W between the cassette mounting stage 20 and the processing block 11 side in the width direction (Y direction in the figure).

[0048] On the other hand, the first transfer mechanism 40 transfers the wafer W to and from the transfer block 30 (i.e., transfers the wafer W to and from the transfer block 30) only from the depth direction (X direction in the figure), and does not transfer the wafer W from and to the transfer block 30 from the width direction (Y direction in the figure). Specifically, as shown by the white dotted arrow in Figure 1, the first transfer mechanism 40 transfers the wafer W to and from the transfer block 30 only from the back side (positive side of the X direction in the figure), and does not transfer the wafer W from the width direction (Y direction in the figure) or the front side (negative side of the X direction in the figure).

[0049] In the cassette block 10, a delivery block 30 is provided in the first transfer space K1.

[0050] In the first transfer space K1, the delivery block 30 is provided so as to be able to deliver the wafer W between the delivery block 30 and the second transfer mechanisms 70 of all the sub-blocks BL included in the processing block 11. Specifically, for example, as shown in Fig. 2, the delivery block 30 is provided so as to be continuous in the vertical direction (X direction in the figure) and to overlap both the upper sub-block BL1 and the lower sub-block BL2 when viewed in the width direction (Y direction in the figure).

[0051] The height of the upper end of the delivery block 30 is, for example, approximately equal to the height of the ceiling surface of the housing 10a of the cassette block 10 that defines the first transfer space K1. In other words, the delivery block 30 is provided so that there is almost no gap between the delivery block 30 and the ceiling surface of the housing 10a. The height of the lower end of the transfer block 30 is a height that allows the wafer W to be transferred between the second transport mechanism 70 of the lower sub-block BL2 and the transfer block 30, and is, for example, approximately the same as the height of the lower end of the layer BL21.

[0052] As shown in Fig. 4, the first transfer space K1 defined by the housing 10a is filled with a storage section 50 for storing various electrical components on the front side of the transfer block 30 (negative side in the X direction in the figure). Specifically, as shown in Figs. 1 and 4, the first transfer space K1 is filled with the storage section 50 on the front side of the transfer block 30, on the processing block 11 side (positive side in the Y direction in the figure) and on the upper side. The storage section 50 exists in approximately the same range as the transfer block 30 in the vertical direction (Z direction in the figure). That is, the heights of the upper and lower ends of the storage section 50 are approximately the same as those of the transfer block 30.

[0053] Further, a first blowing unit 60 is provided for the cassette block 10. The first blowing unit 60 supplies clean gas from above to the first transfer space K1. The first blowing unit 60 includes a fan unit 61 and a filter 62. The fan unit 61 sends the gas to the filter 62. Specifically, for example, the fan unit 61 takes in gas into the fan unit 61 and sends the taken-in gas to the filter 62. The filter 62 purifies the gas sent from the fan unit 61, that is, filters out particles in the gas, and blows out the purified gas (clean gas) downward toward the first transfer space K1.

[0054] The first blowing unit 60 supplies clean gas only to, for example, a portion of the first transfer space K1 that is not filled with the storage section 50 and is located behind the delivery block 30 (the positive side in the X direction in the figure). Specifically, the filter 62 is provided only above a portion of the first transfer space K1 that is deeper than the delivery block 30.

[0055] Note that exhaust from the bottom side of the cassette block 10 may be performed from both the front side and the back side (positive side and negative side in the X direction in the figure) so that the clean gas supplied from the first blowing unit 60 to the first transfer space K1 also flows below the storage section 50 through which the wafer W can pass. That is, exhaust ports (not shown) for exhausting air from the first transfer space K1 may be provided on the front side and the back side of the bottom of the cassette block 10.

[0056] Storage units 51 and 52 for storing various electrical components may be further provided on the upper portion of the cassette block 10. However, the height of the upper ends of the storage units 51 and 52 is set to be equal to or lower than the height of the upper end of the processing block 11. For example, the storage unit 51 is provided above the filter 62, and the storage unit 52 is provided so as to straddle the upper portion of the transfer block 30 and the upper portion of the storage unit 50.

[0057] The fan unit 61 of the first blowing unit 60 may be provided at a position higher than the first transfer space K1 and on the rear side of the first transfer space K1 (the positive side in the X direction in the figure). In this case, a portion below the fan unit 61 may serve as a storage section 53 for storing various electrical components. The storage section 53 may extend to an area overlapping with the cassette mounting table 20 in a top view.

[0058] <Interface Block 12> Next, a more detailed configuration of the interface block 12 will be described with reference to Fig. 2 and using Fig. 6. Fig. 6 is an explanatory diagram of the configuration of the interface block 12.

[0059] The interface block 12 has the third transport mechanism 120 as described above. The third transport mechanism 120 is configured, for example, such that the fork 121 moves only in the space on the front side of the transfer block 110 (the negative side in the X-direction in FIG. 6, etc.) and the fork 121 transfers the wafer W between the transfer block 110 only from the front side.

[0060] In the interface block 12, a delivery block 110 is provided in the third transport space K3 in which the third transport mechanism 120 is provided.

[0061] In the first transfer space K1, the delivery block 110 is provided so as to be able to deliver the wafer W between the delivery block 110 and the second transfer mechanisms 70 of all the sub-blocks BL included in the processing block 11. Specifically, for example, as shown in Fig. 2, the delivery block 110 is continuous in the vertical direction (Z direction in the figure) and overlaps with both the upper sub-block BL1 and the lower sub-block BL2 when viewed in the width direction (Y direction in the figure).

[0062] As shown in FIG. 6, for example, the delivery block 110 is provided with a gap between it and the ceiling surface of the housing 12a of the interface block 12 that defines the third transfer space K3.

[0063] A storage unit 140 for storing various electrical components is provided at the end of the third transfer space K3 on the rear side (the positive side in the X direction in the drawing) and the upper side. The storage unit 140 is provided with a gap between it and the delivery block 110.

[0064] Further, the depth (length in the X direction in the drawing) of the housing 12a defining the third transfer space K3 is smaller than the depth of the processing block 11. Therefore, the front side (positive side in the X direction in the drawing) ends of the housing 12a and the processing block 11 approximately coincide with each other, but the rear side (negative side in the Y direction in the drawing) ends do not coincide with each other, and the rear side end is located on the rear side of the processing block 11.

[0065] Furthermore, a third blowing unit 130 is provided for the interface block 12. The third blowing unit 130 supplies clean gas to the third transfer space K3 from above. The third blowing unit 130 includes a fan unit 131 and a filter 132. The fan unit 131 sends the gas to the filter 132. Specifically, for example, the fan unit 131 takes in the gas into the fan unit 131 and sends the taken-in gas to the filter 132 via the duct 133. The filter 132 purifies the gas sent from the fan unit 131, that is, filters out particles in the gas, and blows out the purified gas (clean gas) downward toward the third transfer space K3.

[0066] The third blowing unit 130 supplies clean gas to, for example, the following parts of the third transfer space K3. A space in front of the transfer block 110 through which the wafer W can pass (the negative side in the X direction in the figure) A space overlapping with the delivery block 110 in top view Space between the delivery block 110 and the storage unit 140

[0067] Specifically, the filter 132 is provided from the front end (negative side in the X direction in the drawing) of the housing 12a to a portion between the transfer block 110 and the storage section 140.

[0068] Furthermore, the fan unit 131 of the third blower unit 130 may be provided on the rear side of the housing 12a (the positive side in the X direction in the figure). In this case, however, the fan unit 131 is provided so that its rear end is not located rearward of the rear end of the processing block 11.

[0069] As described above, the fan unit 101 of the second blower unit 100 used in the processing block 11 may be stacked on the interface block 12. Specifically, the fan unit 101 may be stacked on the filter 132. However, the height of the upper end of the fan unit 101 is set to be equal to or lower than the height of the upper end of the processing block 11. By providing the fan unit 101 in this manner, the overall height of the coating and developing apparatus 1 can be reduced.

[0070] Furthermore, storage units 141, 142 may be provided above a portion of the interface block 12 on the front side (negative side in the X direction in the figure) of the fan unit 101 and above a portion on the rear side (positive side in the X direction in the figure), respectively. However, the height of the upper ends of the storage units 141, 142 is set to be equal to or lower than the height of the upper end of the processing block 11. The storage units 141, 142 store, for example, items that were conventionally mounted above the processing block 11 (for example, electrical equipment for the resist film forming unit COT and electrical equipment for the second transport mechanism 70). Providing the storage units 141, 142 in this manner also makes it possible to reduce the overall height of the coating and developing apparatus 1.

[0071] <Example of Processing Using Coating and Developing Apparatus 1> Next, there will be described an example of processing performed by the coating and developing apparatus 1. Note that each of the following steps is executed under the control of the control unit 200 based on a program stored in a program storage unit (not shown).

[0072] (Step S1) First, the wafer W is carried into the transfer block 30 of the coating and developing apparatus 1.

[0073] Specifically, for example, first, the lift plate (not shown) of the mounting plate 21 on the front side of the cassette mounting table 20 (the negative side in the X-direction in Figure 4, etc.) is moved to the above-mentioned second position, and the wafer W on the lift plate is transferred to the fork 41 of the first transport mechanism 40.

[0074] Next, the wafer W supported by the forks 41 is moved toward the rear side (the positive side in the X direction in FIG. 4, etc.) in a plan view, and passes over the delivery block 30. Specifically, the first guide portion 42 moves toward the rear side along the depth direction, and the wafer W supported by the fork 41 passes under the delivery block 30 and is moved beyond the delivery block 30 to the rear side. In one embodiment, the height of the wafer W is approximately the same when it is transferred from the lift plate of the mounting plate 21 to the forks 41 and when it passes through the transfer block 30 in a plan view.

[0075] Thereafter, the wafer W supported by the fork 41 is delivered to the delivery block 30 from the rear side of the delivery block 30 (the positive side in the X direction in FIG. 4, etc.). Specifically, the fork 41 enters the inside of the delivery unit 31 corresponding to the lower sub-block BL2 in the delivery block 30, and the wafer W is delivered from the fork 41 to the delivery unit 31.

[0076] (Step S2) Next, a resist film coating process is performed on the wafer W, and a resist film is formed on the wafer W. Specifically, for example, the wafer W is transported by the second transport mechanism 70 from the transfer unit 31 corresponding to the lower sub-block BL2 in the transfer block 30 to the resist film forming unit COT of the lower sub-block BL2, and then the resist liquid is spin-coated onto the surface of the wafer W, forming a resist film to cover the surface of the wafer W.

[0077] (Step S3) Next, the wafer W is subjected to pre-exposure baking (PAB). Bake) processing is performed. Specifically, the wafer W is transferred by the second transfer mechanism 70 to a heat treatment unit HT for PAB treatment, and the PAB treatment is performed on the wafer W. Thereafter, the wafer W is transferred to a delivery unit 111 in the delivery block 110 of the interface block 12, which corresponds to the lower sub-block BL2.

[0078] (Step S4) Next, the wafer W is subjected to an exposure process. Specifically, for example, the wafer W is transferred by the third transfer mechanism 120 from the transfer unit 111 corresponding to the lower sub-block BL2 in the transfer block 110 to the exposure device, and the resist film on the wafer W is exposed to a predetermined pattern. Thereafter, the wafer W is transferred by the third transfer mechanism 120 to the transfer unit 111 corresponding to the upper sub-block BL1 in the transfer block 110.

[0079] (Step S5) Next, the wafer W is subjected to a PEB (Post Exposure Bake) process. Specifically, for example, a wafer W is transported by the second transport mechanism 70 from a transfer unit 111 corresponding to the upper sub-block BL1 in the transfer block 110 to a heat treatment unit HT for PEB treatment in the upper sub-block BL1, and the PEB treatment is performed on the wafer W.

[0080] (Step S6) Next, the wafer W is subjected to a development process. Specifically, for example, the wafer W is transferred by the second transfer mechanism 70 to the developing unit DEV, and the wafer W is subjected to a developing process using a developing solution.

[0081] (Step S7) Next, the wafer W is subjected to a post-bake process. Specifically, for example, the wafer W is transported by the second transport mechanism 70 to a heat treatment unit HT for post-bake processing, and the post-bake processing is performed on the wafer W. Thereafter, the wafer W is transported by the second transport mechanism 70 to a delivery unit 31 corresponding to the upper sub-block BL1 in the delivery block 30 of the cassette block 10.

[0082] (Step S8) Then, the wafer W is carried out from the coating and developing apparatus 1. Specifically, the wafer W is returned to the lift plate (not shown) of the mounting plate 21 on the front side (negative side in the X direction in Figure 4, etc.) of the cassette mounting table 20, which is located at the second position described above, in the reverse procedure of step S1.

[0083] This completes the processing by the coating and developing apparatus 1.

[0084] <Main Effects of This Embodiment> As described above, in the coating and developing apparatus 1, the cassette block 10 has the transfer block 30 in which the transfer units 31 for transferring the wafer W between the cassette block 10 and the processing block 11 are stacked. Therefore, compared to the case in which the processing block 11 has the transfer block 30, it is possible to increase the number of processing units mounted in the processing block 11 for high throughput without changing the occupied floor area of ​​the processing block 11. In the coating and developing apparatus 1, the cassette block 10 has a first transport mechanism 40 that transports the wafer W between the cassette mounting table 20 and the delivery block 30. The first transport mechanism 40 has a fork 41, and is configured so that the wafer W supported by the fork 41 can pass through the delivery block 30 in the depth direction (X direction in FIG. 4, etc.) in a plan view. Therefore, compared to a case where such passing is impossible, that is, compared to a case where the wafer W supported by the fork 41 passes through an area that does not overlap with the delivery block 30 in a plan view when moving in the depth direction, the following effects are obtained. That is, it is possible to prevent the floor area occupied by the cassette block 10 from increasing in size due to the provision of the delivery block 30 in the cassette block 10. Therefore, according to this embodiment, it is possible to suppress an increase in the size of the apparatus due to an increase in throughput. In other words, according to this embodiment, it is possible to increase the number of processing units mounted and achieve improved productivity without significantly increasing the size of the apparatus.

[0085] Furthermore, in this embodiment, the first transport mechanism 40 transfers the wafer W to and from the transfer block 30 only from the depth direction (X direction in FIG. 4, etc.), and does not transfer the wafer W from and to the transfer block 30 from the width direction (Y direction in FIG. 4, etc.). Therefore, in the width direction, the size of the portion that does not overlap with the cassette mounting table 20 in a plan view can be minimized. Specifically, in the width direction, the gap h1 between the cassette mounting table 20 and the transfer block 30 can be minimized. Therefore, according to this embodiment, it is possible to prevent the device from becoming large.

[0086] Furthermore, in this embodiment, the first transfer mechanism 40 transfers the wafer W to and from the delivery block 30 only from the rear side (positive side in the X direction in FIG. 4, etc.), and not from the width direction (Y direction in FIG. 4, etc.) or the front side (negative side in the X direction in FIG. 4, etc.). In addition, the first blower unit 60 supplies clean gas only to the rear side of the delivery block 30 that is not filled with the storage section 50, in the first transfer space K1. Therefore, it is possible to suppress the gas from stagnation in the first transfer space K1 while keeping the size of the first blower unit 60 small.

[0087] In this embodiment, the fan unit 101 of the second blower unit 100 for the processing block 11 is provided on the interface block 12, whose upper end is lower than the processing block 11. Therefore, the height of the coating and developing apparatus 1 can be reduced compared to when the fan unit 101 is provided on the processing block 11.

[0088] <Specific examples and variations of the height of the transfer block> FIG. 7 is an explanatory diagram of a modified example of the delivery block of the cassette block 10. In FIG. In the above example, the transfer block 30 of the cassette block 10 was continuous in the vertical direction and overlapped with both the upper sub-block BL1 and the lower sub-block BL2 when viewed in the width direction (Y direction in FIG. 2, etc.). That is, the transfer block 30 had a block 32 for the upper sub-block BL1 and a block 33 for the lower sub-block BL2, and these blocks 32, 33 were continuous in the vertical direction. 7, a gap h2 may be provided between the block 32A for the upper sub-block BL1 and the block 33A for the lower sub-block BL2. In this case, the wafer W supported by the forks 41 of the first transfer mechanism 40 passes through the gap h2 when passing through the transfer block 30 in the depth direction in a plan view.

[0089] <Specific examples of liquid processing layers in processing blocks> 8 is an explanatory diagram of a specific example of an upper layer BL11 included in an upper sub-block BL1 of the processing block 11. Note that the configurations of a lower layer BL12 included in the upper sub-block BL1, and an upper layer BL21 and a lower layer BL22 included in the lower sub-block BL2 are similar to the configuration of the upper layer BL11 included in the upper sub-block BL1.

[0090] 8, the upper layer BL11 has an airflow forming unit 300. The airflow forming unit 300 generates an airflow from above to below the cup 82 in the processing space K11 in which the spin chuck 81 and the cup 82 are provided.

[0091] The airflow forming unit 300 includes a fan filter unit (FFU) 301 as a fourth blowing unit that supplies clean air to the processing space K11 from above.

[0092] The airflow forming unit 300 has a straightening plate 302 in addition to the FFU 301 . The current plate 302 is provided between the cup 82 and the FFU 301, and forms a downward airflow from the gas blown out from the FFFU 301.

[0093] The current plate 302 has an opening 303 for each spin chuck 81, i.e., for each cup 82. Each opening 303 is provided at a position facing the corresponding spin chuck 81, and forms an airflow toward the wafer W held by the corresponding spin chuck 81.

[0094] In addition, the straightening vane 302 forms, for each opening 303, an airflow stronger than an outer area R2 in an area R1 surrounding the outer periphery of the corresponding opening 303 in a plan view. Hereinafter, the areas R1 and R2 may be referred to as a strong airflow forming area R1 and a weak airflow forming area R2, respectively.

[0095] The straightening plate 302 includes an outlet hole (not shown) through which the gas from the FFU 301 passes and is discharged downward. A plurality of outlet holes are formed in both the region of the straightening plate 302 facing the strong airflow forming region R1 and the region facing the weak airflow forming region R2. A first aperture ratio, which is the ratio of the outlet holes in the region of the straightening plate 302 facing the strong airflow forming region R1, is lower than a second aperture ratio, which is the ratio of the outlet holes in the region facing the weak airflow forming region R2. This makes the flow velocity of the airflow formed by the gas discharged from the outlet holes in the region facing the strong airflow forming region R1 faster than the flow velocity of the airflow formed by the gas discharged from the outlet holes in the region facing the weak airflow forming region R2. That is, a stronger airflow can be formed in the strong airflow forming region R1 than in the weak airflow forming region R2.

[0096] The strong air current formed in the strong air current forming region R1 functions as an air curtain. Therefore, it is possible to prevent the influence of disturbance factors present in the weak air current forming region R2 from reaching the region above the cup 82 inside the strong air current forming region R1. Specifically, it is possible to prevent particles in the weak air current forming region R2 from being included in the air current flowing downward from the opening 303, i.e., the air current flowing toward the wafer W.

[0097] 9, the upper layer BL11 may have an opening 311 in a sidewall 310 covering the side of the processing space K11. The opening 311 connects the processing space K11 to a space adjacent to the processing space K11 (for example, the first transfer space K1 or the third transfer space K3). By providing such an opening 311, gas in the processing space K11 can be released to the adjacent space.

[0098] The opening 311 is provided, for example, in the lower part of the side wall 310, specifically, on the side wall 310 below the upper end of the cup 82. This makes it possible to prevent particles contained in the gas from reaching the inside of the cup 82 when the gas in the adjacent space returns to the processing space K11 through the opening 311.

[0099] Moreover, the opening 311 may be provided in an upper portion of the side wall 310. Specifically, the opening 311 may be provided above the upper end of the cup 82 on the side wall 310. This allows the gas in the processing space K11 to escape to the adjacent space through the opening 311 when the pressure in the processing space K11 suddenly increases or the airflow in the processing space K11 suddenly becomes strong.

[0100] 10, a partition 320 may be provided to separate the cups 82 in the width direction (Y direction in the figure). This makes it possible to prevent the following from affecting each other between a portion in the processing space K11 where one cup 82 is provided and a portion in the processing space K11 where the other cup 82 is provided. The airflow formed by the airflow forming unit 300, i.e., the downflow Exhaust from outside of cup 82

[0101] The height of the partition 320 is equal to, for example, the height of the processing space K11 (if the straightening plate 302 is provided, the height from the bottom wall 330 of the layer BL11 to the straightening plate 302). In this case, the partition 320 has an opening 321 through which the nozzle 83 passes when the nozzle 83 moves in the width direction (Y direction in the figure).

[0102] 11, a flow straightening member 340 may be provided between the cup 82 and the side wall 310A. The flow straightening member 340 guides the gas from the FFU 301 to an exhaust port 331 provided on the outside of the cup 82 in the lower part of the processing space K11. The exhaust port 331 is provided for each cup 82, for example, between the corresponding cup 82 and the side wall 310. At least a lower end of the straightening member 340 may be located between the cup 82 and the exhaust port 331, and another portion of the straightening member 340 may be located between the exhaust port 331 and the side wall 310.

[0103] Furthermore, the height of the upper end of the partition 320A separating the cups 82 may be lower than the height of the upper ends of the cups 82. In this case, an exhaust port 332 for exhausting air from the outside of the cup 82 to the processing space K11 may be provided between the partition 320A and the cup 82 for each cup 82. This makes it easy to individually control the pressure and airflow in a portion of the processing space K11 where one cup 82 is provided and a portion of the processing space K11 where the other cup 82 is provided.

[0104] In the illustrated example, exhaust ports 331 and 332 are provided in bottom wall 330. However, exhaust ports 331 and 332 may be provided in a portion other than bottom wall 330 that is outside cup 82 and lower than the upper end of cup 82.

[0105] <Modification 1 of Processing Block> Fig. 12 is an explanatory diagram showing an outline of the configuration of a first modified example of a processing block. Fig. 13 is an explanatory diagram showing an outline of the configuration of the front side of the processing block of Fig. 12. Fig. 14 is an explanatory diagram showing a schematic outline of the configuration of a division block described later. Fig. 15 is an explanatory diagram showing the configuration of an intermediate block described later. The coating and developing apparatus 1A in Fig. 12 and Fig. 13 has a different configuration of the processing block from the coating and developing apparatus 1 shown in Fig. 1 and the like. Specifically, the processing block 11A of the coating and developing apparatus 1A is divided into a plurality of divided blocks DBL in the width direction (Y direction in the figure). In the example of Fig. 12, the processing block 11A is divided into two divided blocks DBL, and an intermediate block CBL is provided between two adjacent divided blocks DBL. Hereinafter, the divided block DBL on the negative side in the width direction (left side in the figure) may be referred to as the left divided block DBL1, and the divided block DBL on the positive side in the width direction (right side in the figure) may be referred to as the right divided block DBL2.

[0106] Each of the division blocks DBL is configured similarly to the processing block 11 described with reference to FIG. The divided blocks DBL and intermediate blocks CBL will be described below, with the difference between the divided blocks DBL and the processing block 11 being mainly described.

[0107] Of the divided blocks DBL, in the left divided block DBL1, as shown in FIG. 14, an upper sub-block BL1A and a lower sub-block BL2 are stacked in this order from above, and a shuttle layer BL3 is provided between the upper sub-block BL1A and the lower sub-block BL2.

[0108] Similar to the upper sub-block BL1 of the above-described processing block 11, each of the upper sub-block BL1A and the lower sub-block BL2 of the left divided block DBL1 is provided with a second transport mechanism 70. However, the second transport mechanism 70 provided in the left divided block DBL1 transports wafers W not only between the delivery block 30 and the processing units in the left divided block DBL1 and between the processing units in the left divided block DBL1, but also between the processing units in the left divided block DBL1 and a delivery block 170 (to be described later) of the intermediate block CBL.

[0109] In the left divided block DBL1, the front side (negative side in the X direction in the figure) of the second transfer space K2 in the upper sub-block BL1A is divided into an upper layer BL21 and a lower layer BL22 in which resist film forming units COT are provided, similar to the lower sub-block BL2, unlike the above-mentioned processing block 11. That is, in the left divided block DBL1, four layers in which resist film forming units COT are provided are stacked.

[0110] Other configurations of the upper sub-block BL1A and the lower sub-block BL2 of the left divided block DBL1 are similar to those of the upper sub-block BL1 and the lower sub-block BL2 of the processing block 11 described above, respectively.

[0111] The shuttle layer BL3 is provided with a shuttle transfer mechanism 150. The shuttle transfer mechanism 150 transfers the wafer W only linearly in the width direction (Y direction in the figure). In this example, the shuttle transfer mechanism 150 transfers the wafer W linearly in the width direction (Y direction in the figure) between the transfer block 30 of the cassette block 10 and the transfer block 170 of the intermediate block BLC. That is, the shuttle transfer mechanism 150 transfers the wafer W linearly in the width direction between the transfer blocks. Therefore, the shuttle transfer mechanism 150 does not transfer the wafer W to the processing unit in the processing block 11.

[0112] The linear transfer path of the wafer W by the shuttle transfer mechanism 150 does not overlap with the processing units in the left divided block DBL1 in a plan view, but overlaps with the second transfer space K2 in which the second transfer mechanism 70 is provided.

[0113] On the other hand, in the right divided block DBL2, an upper sub-block BL1 and a lower sub-block BL2A ​​are stacked in this order from the top, as shown in Fig. 13. Although not shown, in the right divided block DBL2, a shuttle layer BL3 is provided between the upper sub-block BL1 and the lower sub-block BL2A, similar to the left divided block DBL1.

[0114] A transfer mechanism 160 (see FIG. 12) is provided in each of the upper sub-block BL1 and the lower sub-block BL2A ​​of the right divided block DBL2. The transfer mechanism 160, like the second transfer mechanism 70 provided in the left divided block DBL1, transfers the wafer W to the processing units in the right divided block DBL2. Specifically, the transfer mechanism 160 transfers the wafer W between a transfer block 170 of the intermediate block CBL and the processing units in the right divided block DBL2, between the processing units in the right divided block DBL2, and between the processing units in the right divided block DBL2 and a transfer block 110 of the interface block 12A described later.

[0115] In the right divided block DBL2, the front side (negative side in the X direction in the figure) of the second transfer space K2 in the lower sub-block BL2A ​​is divided into an upper layer BL11 and a lower layer BL12 in which the developing units DEV are provided, similar to the upper sub-block BL1, unlike the above-mentioned processing block 11. That is, in the right divided block DBL2, four layers in which the developing units DEV are provided are stacked.

[0116] Other configurations of the upper sub-block BL1 and lower sub-block BL2A ​​of the right divided block DBL2 are similar to those of the upper sub-block BL1 and lower sub-block BL2 of the processing block 11 described above, respectively.

[0117] The shuttle layer BL3 of the right divided block DBL2 is also provided with a shuttle transfer mechanism 150. However, the shuttle transfer mechanism 150 of the right divided block DBL2 linearly transfers the wafer W in the width direction (Y direction in the figure) between the delivery block 170 of the intermediate block BLC and the delivery block 110 of the interface block 12A.

[0118] In the shuttle layer BL3 of the right-side divided block DBL2, the shuttle transport mechanism 150 transports the wafer W in a straight line so that, in a planar view, the wafer W does not pass over the area overlapping with the processing units in the right-side divided block DBL2, but passes over the transport space K4 in which the transport mechanism 160 is provided.

[0119] As shown in FIG. 12, the intermediate block CBL is provided between two divided blocks DBL arranged in the width direction, and relays the wafer W between them. 15, the intermediate block CBL has a transfer block 170. The transfer block 170 is formed by stacking transfer units 171 for transferring the wafer W. In the intermediate block CBL, the transfer block 170 is provided at a position sandwiched between the second transfer space K2 of the left divided block DBL1 and the transfer space K4 of the right divided block DBL2.

[0120] Among the delivery units 171 included in the delivery block 170, those accessed by the shuttle transport mechanism 150 may be provided separately for the shuttle transport mechanism 150 of the left divided block DBL1 and for the shuttle transport mechanism 150 of the right divided block DBL2. This prevents transport by one shuttle transport mechanism 150 from being hindered by transport by the other shuttle transport mechanism 150. When provided separately in this manner, the delivery unit 171a for the shuttle transport mechanism 150 in the left divided block DBL1 and the delivery unit 171b for the shuttle transport mechanism 150 in the right divided block DBL2 may be arranged in the width direction (Y direction in the figure) on the same stage, as shown in Fig. 12. This allows the shuttle layers BL3 to be provided at the same height in the left divided block DBL1 and the right divided block DBL2, thereby making it possible to reduce the height of the apparatus when the shuttle layer BL3 is provided.

[0121] Similarly, in the transfer block 170, for stages other than the stage in which the transfer unit 171 for the shuttle transport mechanism 150 is provided, the transfer units 171 may be provided separately for the left-side divided block DBL1 and the right-side divided block DBL2 and aligned in the width direction (Y direction in the figure).

[0122] Furthermore, the intermediate block CBL has a transfer mechanism 180 that transfers the wafer W between a transfer unit 171 for the shuttle transfer mechanism 150 of the transfer block 170 and another transfer unit 171. The transfer mechanism 180 has a fork 181 that supports the wafer W. The fork 181 is configured to be freely movable in the vertical direction (Z direction in the figure), a direction around the vertical axis, the depth direction (X direction in the figure), and the width direction (Y direction in the figure).

[0123] In the intermediate block CBL, the aforementioned delivery block 170 is provided in the transfer space K5 in which the transfer mechanism 180 is provided. The delivery block 170 is provided with a gap between it and the ceiling surface of the housing CBLa of the intermediate block CBL1 that defines the transfer space K5, for example. At the front side of the transport space K5 (the negative side in the X direction in the figure), there is a chemical section CHE which houses bottles for storing the coating liquid (specifically, the resist liquid) used in the resist film forming unit COT, a pump for pressure-feeding the coating liquid to the resist film forming unit COT, and the like.

[0124] In addition, the depth (length in the X direction in the drawing) of the housing CBLa that defines the transfer space K5 is smaller than the depth of the divided block DBL. Therefore, the front side (positive side in the X direction in the drawing) ends of the housing 12a and the divided block DBL are approximately aligned, but the rear side (negative side in the Y direction in the drawing) ends are not aligned, and the rear side end is located on the rear side of the divided block DBL.

[0125] Furthermore, a blower unit 190 is provided for the intermediate block CBL. The blower unit 190 supplies clean gas to the transfer space K5 from above. The blower unit 190 includes a fan unit 191 and a filter 192. The fan unit 191 sends the gas to the filter 192. Specifically, for example, the fan unit 191 takes in the gas into the fan unit 191 and sends the taken-in gas to the filter 192 via a duct 193. The filter 192 purifies the gas sent from the fan unit 191, that is, filters out particles in the gas, and blows out the purified gas (clean gas) downward toward the transfer space K5.

[0126] The blower unit 190 supplies clean gas to, for example, the following parts of the transfer space K5. A space behind the transfer block 170 through which the wafer W can pass (the positive side in the X direction in the figure) - Space overlapping with the delivery block 170 when viewed from above

[0127] Also, the fan unit 191 of the blower unit 190 may be provided on the rear side of the housing CBLa (the positive side in the X direction in the figure). In this case, however, the fan unit 191 is provided so that its rear end is not located rearward of the rear end of the divided block DBL.

[0128] The fan unit 101 of the second blower unit 100 used in the left divided block DBL1 may be stacked on the middle block CBL. Specifically, the fan unit 101 may be stacked on the filter 192. However, the height of the upper end of the fan unit 101 is set to be equal to or lower than the height of the upper end of the divided block DBL. By providing the fan unit 101 in this manner, the overall height of the coating and developing apparatus 1A can be reduced.

[0129] The above-mentioned storage units 141 and 142 may be provided above a portion of the intermediate block CBL on the front side (negative side in the X direction in the drawing) and a portion on the rear side (positive side in the X direction in the drawing) of the fan unit 101. However, the height of the upper ends of the storage units 141 and 142 is set to be equal to or lower than the height of the upper end of the processing block 11.

[0130] 12 differs from the coating and developing apparatus 1 shown in FIG 1 etc. in the configuration of the interface block. Specifically, the interface block 12A of the coating and developing apparatus 1A is provided with a transfer mechanism 125 that transfers the wafer W between a transfer unit 171 accessed by the shuttle transfer mechanism 150 in the transfer block 110 and another transfer unit 171. This transfer mechanism 125 is provided, for example, on the rear side of the transfer block 110 (the positive side in the X direction in the figure). The other configuration of the interface block 12A is similar to that of the interface block 12.

[0131] In the coating and developing apparatus 1A, the wafer W is supported, for example, in the following order, and the wafer W is subjected to a resist film coating process, an exposure process, etc. In the following, among the transfer units, a transfer unit that is accessed by any of the shuttle transfer mechanisms is referred to as a shuttle transfer unit, and a transfer unit that is not accessed by any of the shuttle transfer mechanisms is referred to as a non-shuttle transfer unit.

[0132] First transport mechanism 40 → non-shuttle transfer unit 31 in transfer block 30 → second transport mechanism 70 → resist film formation unit COT in left divided block DBL1 → second transport mechanism 70 → heat treatment unit HT for PAB treatment in left divided block DBL1 → second transport mechanism 70 → non-shuttle transfer unit 171 in intermediate block CBL → transport mechanism 180 → transfer unit 171b in intermediate block CBL → shuttle transport mechanism 150 in right divided block DBL2 → shuttle transfer unit 111 in interface block 12A → transport mechanism 125 → non-shuttle transfer unit 111 in transfer block 110 → third transport mechanism 120 → exposure device

[0133] Furthermore, the wafer W is supported, for example, in the following order, and the wafer W is subjected to PEB processing, development processing, and the like.

[0134] Exposure device→third transport mechanism 120→non-shuttle transfer unit 111 of interface block 12→transport mechanism 160→thermal treatment unit HT for PEB processing in right divided block DBL2→transport mechanism 160→developing unit DEV in right divided block DBL2→transport mechanism 160→thermal treatment unit HT for post-bake processing in right divided block DBL2→transport mechanism 160→non-shuttle transfer unit 171 in intermediate block CBL→transport mechanism 180→transport unit 171a in intermediate block CBL→shuttle transport mechanism 150 in left divided block DBL1→shuttle transfer unit 31 in transfer block 30→first transport mechanism 40

[0135] By using the above-described processing block 11A, the number of processing units mounted in the processing block 11A can be increased.

[0136] <Modification 2 of Processing Block> Fig. 16 is an explanatory diagram showing an outline of the configuration of the processing block according to Modification 2. Fig. 17 is an explanatory diagram of the configuration of the intermediate block CBLB. In the coating and developing apparatus 1B in Fig. 16, the processing block 11B is divided in the width direction (X direction in the figure) like the coating and developing apparatus 1A shown in Fig. 12 etc. However, unlike the coating and developing apparatus 1A, the coating and developing apparatus 1B has a storage section 141 provided above the left divided block DBL1 and the right divided block DBL2. Also, as shown in Fig. 17, the storage sections 141 and 142 are not provided above the intermediate block CBLB.

[0137] Therefore, the height of the upper end of the intermediate block CBLB can be increased to the height of the upper end of the divided block DBL. By increasing the height of the intermediate block CBLB in this manner, an operator can easily access the uppermost stage of the divided block DBL via the intermediate block CBLB for maintenance of the processing unit at the uppermost stage of the divided block DBL. In other words, maintenance is facilitated.

[0138] Furthermore, even if the height of the upper end of the intermediate block CBLB is increased as described above, there is a distance between the upper end of the intermediate block CBLB and the upper end of the storage section 141 on the divided block DBL, so that both the fan unit 191 and the filter 192 of the blower unit 190 can be provided above the intermediate block CBL.

[0139] Furthermore, if the fan unit 191 is provided above the intermediate block CBLB, rather than on the rear side of the intermediate block CBLB (its housing CBLBa), the rear end of the housing CBLBa (the positive end in the X direction in the figure) can be extended to the rear end of the divided block DBL. As a result, the processing units can be provided on the rear side of the transport mechanism 180 in the intermediate block CBLB. Note that, for example, a processing unit smaller than the thermal processing unit HT provided in the divided block DBL is provided on the rear side of the transport mechanism 180 in the intermediate block CBLB. More specifically, for example, when the thermal processing unit HT has both a hot plate and a cooling plate, a thermal processing unit HT having only a hot plate is provided on the rear side of the transport mechanism 180 in the intermediate block CBLB.

[0140] Furthermore, by increasing the height of the upper end of the intermediate block CBLB as described above, a unit (e.g., an imaging unit for inspection) whose dimensions in the depth direction (X direction in the figure) are equal to those of the heat treatment unit HT, etc., can be provided in the area in front of the intermediate block CBLB (negative X direction in the figure) where no chemical section CHE is present.

[0141] In addition, when the storage sections 141, 142 are not provided above the interface block 12A, the height of the upper end of the interface block 12A may be increased in a similar manner, and both the fan unit 131 and the filter 132 of the third blowing unit 130 may be provided above the interface block 12A.

[0142] <Modification 3 of Processing Block> Fig. 18 is an explanatory diagram showing an outline of the configuration of the processing block according to Modification 3. Fig. 19 is an explanatory diagram showing the configuration of the division block DBLC. In the coating and developing apparatus 1C in FIG. 18, a processing block 11C is divided into a plurality of divided blocks DBLC in the width direction (Y direction in the figure) similarly to the coating and developing apparatus 1A shown in FIG. 12 and the like. However, unlike the coating and developing apparatus 1A, no intermediate block is provided between adjacent divided blocks DBLC, and the plurality of divided blocks DBLC constituting the processing block 11C are connected in the width direction (Y direction in the figure). In the example of FIG. 18, the processing block 11C is divided into two divided blocks DBLC, and no intermediate block is provided between the two adjacent divided blocks DBLC. Hereinafter, the divided block DBL on the negative side in the width direction (left side in the figure) may be referred to as the left divided block DBLC1, and the divided block DBLC on the positive side in the width direction (right side in the figure) may be referred to as the right divided block DBLC2.

[0143] Of the divided blocks DBLC, in the left divided block DBLC1, as shown in FIG. 19, an upper sub-block BL1C and a lower sub-block BL2C are stacked in this order from above, and a shuttle layer BL3C is provided in each of the upper sub-block BL1C and the lower sub-block BL2C.

[0144] Each of the upper sub-block BL1C and the lower sub-block BL2C of the left divided block DBLC1 is provided with a second transport mechanism 70, similar to the upper sub-block BL1 of the above-described processing block 11. However, the second transport mechanism 70 provided in the left divided block DBLC1 transports wafers W not only between the delivery block 30 and the processing units in the left divided block DBLC1 and between the processing units in the left divided block DBLC1, but also between the processing units in the left divided block DBLC1 and a delivery unit TRS3 described below.

[0145] In addition, in the left-side divided block DBLC1, the front side (negative side of the X-direction in the figure) of the second transport space K2 in each of the upper sub-block BL1C and the lower sub-block BL2C is divided into an upper layer BL21 and a lower layer BL22 in which a resist film forming unit COT is provided, similar to the aforementioned lower sub-block BL2.

[0146] On the other hand, in the right-side divided block DBLC2 of the divided blocks DBLC, although not shown in the figure, an upper sub-block BL1D and a lower sub-block BL2D are stacked in this order from above, and a shuttle layer BL3D is provided in each of the upper sub-block BL1D and the lower sub-block BL2D.

[0147] Each of the upper sub-block BL1D and the lower sub-block BL2D of the right divided block DBLC2 is provided with a transport mechanism 160 (see FIG. 18), similar to the upper sub-block BL1 of the right divided block DBL2 described above. However, unlike the one provided in the right divided block DBL2 described above, the transport mechanism 160 provided in the right divided block DBLC2 transports wafers W not only between the transfer block 110 of the interface block 12A and the processing units in the right divided block DBLC2 and between the processing units in the right divided block DBLC2, but also between the processing units in the right divided block DBLC2 and a transfer unit TRS2 described below.

[0148] In addition, in the right-side divided block DBLC2, the front side (negative side in the X-direction in the figure) of the transport space K4 in each of the upper sub-block BL1D and the lower sub-block BL2D is divided into an upper layer BL11 in which the development unit DEV is provided and a lower layer BL12, similar to the upper sub-block BL1 described above.

[0149] Returning to the explanation of the left divided block DBLC1. In the left divided block DBLC1, a shuttle layer BL3C is provided on the rear side (positive side in the X direction in the figure) of the second transfer space K2 in each of the upper sub-block BL1C and the lower sub-block BL2C, stacked on the heat-treating unit HT.

[0150] A shuttle transport mechanism 150C is provided in the shuttle layer BL3C. Hereinafter, the shuttle transport mechanism 150C provided in the shuttle layer BL3C of the upper sub-block BL1C may be referred to as an upper shuttle transport mechanism 150Ca, and the shuttle transport mechanism 150C provided in the shuttle layer BL3C of the lower sub-block BL2C may be referred to as a lower shuttle transport mechanism 150Cb.

[0151] The shuttle transfer mechanism 150C transfers the wafer W only linearly in the width direction (Y direction in the figure) like the previously described shuttle transfer mechanism 150. In this example, the shuttle transfer mechanism 150C transfers the wafer W linearly in the width direction (Y direction in the figure) between a transfer unit TRS1 provided in the left division block DBL1 and a transfer unit TRS2 provided in the right division block DBL2. Specifically, the upper shuttle transport mechanism 150Ca is provided between a transfer unit TRS1 provided in the upper sub-block BL1C of the left divided block DBLC1 and a transfer unit TRS2 provided in the upper sub-block BL1D of the right divided block DBLC2. The lower shuttle transfer mechanism 150Cb transfers the wafer W linearly in the width direction. In addition, the lower shuttle transfer mechanism 150Cb transfers the wafer W linearly in the width direction between a transfer unit TRS1 provided in the lower sub-block BL2C of the left divided block DBLC1 and a transfer unit TRS2 provided in the lower sub-block BL2C of the right divided block DBLC2. Hereinafter, the transfer unit TRS1 provided in the upper sub-block BL1C may be referred to as an upper transfer unit TRS1a, and the transfer unit TRS2 provided in the upper sub-block BL1D may be referred to as an upper transfer unit TRS2a.

[0152] The linear wafer W transport path and delivery units TRS1, TRS2 of the shuttle transport mechanism 150C are provided so as to overlap the processing units in the processing block 11C in a plan view. For example, when the thermal processing unit HT has both a hot plate and a cooling plate, the linear wafer W transport path and delivery units TRS1, TRS2 of the shuttle transport mechanism 150C are provided so as to overlap only the cooling plate, not the hot plate, of the thermal processing unit HT in a plan view.

[0153] The transfer unit TRS1 is provided, for example, at the end of the left divided block DBLC1 on the cassette block 10 side in a region on the rear side (positive side in the X direction in the figure) of the second transfer space K2. The transfer unit TRS2 is provided, for example, at the end of the right divided block DBLC2 on the cassette block 10 side in a region on the rear side (positive side in the X direction in the drawing) of the transfer space K4.

[0154] On the other hand, in the right divided block DBLC2, a shuttle layer BL3D is provided on the rear side (positive side in the X direction in the figure) of the transfer space K4 in each of the upper sub-block BL1D and the lower sub-block BL2D, stacked on the heat-treating unit HT.

[0155] A shuttle transport mechanism 150D is provided in the shuttle layer BL3D. Hereinafter, the shuttle transport mechanism 150D provided in the shuttle layer BL3D of the upper sub-block BL1D may be referred to as an upper shuttle transport mechanism 150Da, and the shuttle transport mechanism 150D provided in the shuttle layer BL3D of the lower sub-block BL2D may be referred to as a lower shuttle transport mechanism 150Db.

[0156] The shuttle transfer mechanism 150D transfers the wafer W only linearly in the width direction (Y direction in the figure) like the previously described shuttle transfer mechanism 150. In this example, the shuttle transfer mechanism 150D transfers the wafer W linearly in the width direction (Y direction in the figure) between a transfer unit TRS3 provided in the right division block DBLC2 and a transfer unit TRS4 provided in the left division block DBLC1. Specifically, the upper shuttle transfer mechanism 150Da linearly transfers the wafer W in the width direction between a transfer unit TRS3 provided in the upper sub-block BL1D of the right divided block DBLC2 and a transfer unit TRS4 provided in the upper sub-block BL1C of the left divided block DBLC1. The lower shuttle transfer mechanism 150Db linearly transfers the wafer W in the width direction between a transfer unit TRS3 provided in the lower sub-block BL2D of the right divided block DBLC2 and a transfer unit TRS4 provided in the lower sub-block BL2C of the left divided block DBLC1. Hereinafter, the transfer unit TRS3 provided in the upper sub-block BL1D may be referred to as an upper transfer unit TRS3a, and the transfer unit TRS4 provided in the upper sub-block BL1C may be referred to as an upper transfer unit TRS4a.

[0157] The linear wafer W transport path and delivery units TRS3 and TRS4 of the shuttle transport mechanism 150D are arranged to overlap the processing units in the processing block 11C in a plan view. For example, when the thermal processing unit HT has both a hot plate and a cooling plate, the linear wafer W transport path and delivery units TRS3 and TRS4 of the shuttle transport mechanism 150D are arranged to overlap only the cooling plate of the thermal processing unit HT, not the hot plate, in a plan view.

[0158] The transfer unit TRS3 is provided, for example, at the end of the interface block 12A side in a region on the rear side (positive side in the X direction in the drawing) of the transfer space K4 of the right divided block DBLC2. The transfer unit TRS4 is provided, for example, at the end of the interface block 12A side in a region on the rear side (positive side in the X direction in the figure) of the second transfer space K2 of the left divided block DBLC1.

[0159] When the processing block 11C is configured as described above, the transfer mechanism 125 of the interface block 12A transfers the wafer W between the delivery unit TRS4 and the delivery block 110.

[0160] Furthermore, when the processing block 11C is configured as described above, the first transfer mechanism 40 of the cassette block 10 is configured to be able to transfer the wafer W to the delivery unit TRS1 as well.

[0161] When the processing block 11C is configured as described above, the wafer W is supported, for example, in the following order, and the wafer W is subjected to a resist film coating process, an exposure process, and the like.

[0162] First transport mechanism 40 → transfer unit 31 in transfer block 30 → second transport mechanism 70 → resist film formation unit COT in upper sub-block BL1C → second transport mechanism 70 → thermal processing unit HT for PAB treatment in upper sub-block BL1C → second transport mechanism 70 → upper transfer unit TRS4a → upper shuttle transport mechanism 150Da → upper transfer unit TRS3a → transport mechanism 125 → transfer unit 111 in interface block 12 → third transport mechanism 120 → exposure device

[0163] Furthermore, the wafer W is supported, for example, in the following order, and the wafer W is subjected to PEB processing, development processing, and the like.

[0164] Exposure apparatus→third transport mechanism 120→transfer unit 111 of interface block 12→transfer mechanism 160→thermal processing unit HT for PEB processing in upper sub-block BL1D→transfer mechanism 160→thermal processing unit HT for PEB processing in upper sub-block BL1D→transfer mechanism 160→developing unit DEV in upper sub-block BL1D→transfer mechanism 160→thermal processing unit HT for post-bake processing in upper sub-block BL1D→transfer mechanism 160→upper transfer unit TRS2a→upper shuttle transfer mechanism 150Ca→upper transfer unit TRS1a→first transport mechanism 40

[0165] By using the above-described processing block 11C, the number of processing units mounted in the processing block 11C can be increased.

[0166] Furthermore, in the case where the first transfer mechanism 40 transfers the wafer not only to the transfer block 30 but also to the transfer unit TRS1, it is preferable to configure as follows. That is, the first transfer mechanism 40 transfers the wafer W to and from the transfer block 30 only from one side (specifically, the back side) in the depth direction (X direction in the figure), and the transfer unit TRS1 is provided on the one side (specifically, the back side) of the transfer block 30. This allows the transfer of the wafer W to the transfer block 30 by the first transfer mechanism 40 and the transfer of the wafer W to the transfer unit TRS1 by the first transfer mechanism 40 to be performed consecutively in a short time, thereby improving the throughput.

[0167] The substrate processing apparatus according to the present disclosure can also be applied to processing apparatuses for processing substrates other than semiconductor wafers, such as FPD (flat panel display) substrates. Furthermore, the processing performed on the wafer W by the processing unit of the substrate processing apparatus may be acquisition of an image for inspection.

[0168] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. From such an arbitrary combination, the actions and effects of each of the components in the combination can be obtained as a matter of course, and other actions and effects that are obvious to a person skilled in the art from the description of this specification can be obtained.

[0169] In addition, the effects described in this specification are merely explanatory or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to a person skilled in the art from the description of this specification in addition to or in place of the above effects.

[0170] Note that the following configuration examples also fall within the technical scope of the present disclosure. (1) a carry-in / out block having a container mounting section on which a plurality of containers configured to accommodate substrates are mounted; a processing block provided adjacent to the loading / unloading block in a width direction and having a plurality of processing units for processing the substrate; The loading / unloading block includes: a transfer block provided on the processing block side, the transfer block including stacked transfer units for transferring the substrate between the processing block and the transfer block; a first transport mechanism that transports the substrate between the container placement unit and the delivery block, the processing block further includes a second transport mechanism that transports the substrate between the delivery block and the processing unit; The first transport mechanism is a support portion for supporting the substrate; The substrate processing apparatus is configured so that the substrate supported by the support portion can pass through the transfer block in a depth direction intersecting with the width direction in a plan view. (2) The substrate processing apparatus according to (1), wherein the first transport mechanism transfers the substrate to and from the transfer block only from the depth direction. (3) A first blowing unit is further provided to supply clean gas from above to a first transfer space in the carry-in / out block in which the first transfer mechanism is provided, the first transport mechanism transfers the substrate to and from the delivery block only from one side in the depth direction; the first blowing unit is configured to supply the clean gas only to the one side in the depth direction of the delivery block in the first transfer space, The substrate processing apparatus according to (2), wherein the other side of the first transfer space in the depth direction from the delivery block is filled with a storage section that stores electrical components. (4) The substrate processing apparatus according to any one of (1) to (3), wherein the container mounting part is provided on the side of the load / unload block opposite to the processing block in the width direction. (5) The substrate processing apparatus according to (4), wherein the first transport mechanism transfers the substrate between the container mounting part and the processing block from a side of the processing block in the width direction. (6) The first transport mechanism further includes a first guide portion that guides the movement of the support portion in a vertical direction and a second guide portion that guides the movement of the first guide portion in the depth direction, The substrate processing apparatus of (4) or (5), wherein the size of the gap between the container mounting portion and the transfer block in the width direction is larger than the length of the first guide portion and smaller than the length of the support portion. (7) The substrate processing apparatus according to any one of (1) to (6), wherein the second transport mechanism transfers the substrate to and from the transfer block in the width direction. (8) the processing block is divided into a plurality of blocks in a vertical direction; the second transport mechanism is provided in each of the plurality of blocks; The substrate processing apparatus according to any one of (1) to (7), wherein the transfer block is provided so as to be capable of transferring the substrate between the transfer block and the second transport mechanism in all of the plurality of blocks. (9) another block provided on an opposite side of the loading / unloading block in the width direction of the processing block; a second blowing unit configured to blow clean gas from above into a second transfer space in the processing block, the second transfer mechanism being a space in the processing block in which the second transfer mechanism is provided; The substrate processing apparatus according to any one of (1) to (8), wherein a portion of the second blowing unit is overlapped on the other block. (10) The processing block is divided into a plurality of divided blocks in the width direction, For each of the divided blocks, A plurality of said processing units; The substrate processing apparatus according to any one of (1) to (8), further comprising a shuttle transport mechanism that transports the substrate only linearly in the width direction. (11) The processing block further includes an intermediate block between adjacent divided blocks, The intermediate block has the transfer block, The substrate processing apparatus according to (10), wherein the shuttle transport mechanism transports the substrate linearly in the width direction between the delivery blocks. (12) The plurality of divided blocks are connected in the width direction, The substrate processing apparatus according to claim 10, wherein the shuttle transport mechanism transports the substrate linearly in the width direction between the transfer unit in the divided block in which the shuttle transport mechanism is provided and the transfer unit in another divided block adjacent to the divided block. (13) The substrate processing apparatus according to (12), wherein a linear transport path of the wafer W by the shuttle transport mechanism and the delivery unit through which the shuttle transport mechanism transports the substrate overlap with the processing unit in a plan view. (14) The substrate processing apparatus described in (12) or (13), wherein the first transport mechanism also transports the substrate to the transfer unit to which the shuttle transport mechanism transports the substrate within the divided block on the side of the load / unload block in the width direction. (15) The first transport mechanism transfers the substrate to and from the delivery block only from one side in the depth direction, The substrate processing apparatus according to (14), wherein the transfer unit through which the shuttle transport mechanism transports the substrate within the divided block on the side of the load-unload block in the width direction is provided on the one side of the transfer block of the load-unload block in the depth direction. [Explanation of symbols]

[0171] 1, 1A, 1B, 1C Coating and developing equipment 10 Cassette Block 11, 11A, 11B, 11C Processing Blocks 20 Cassette placement table 30 Delivery Block 31 Delivery Unit 40 First conveying mechanism 41 Fork 70 Second conveying mechanism C Cassette COT resist film forming unit DEV Development Unit HT Heat Treatment Unit W wafer

Claims

1. a carry-in / out block having a container placement section on which a plurality of containers configured to accommodate substrates are placed; a processing block provided adjacent to the loading / unloading block in a width direction and having a plurality of processing units for processing the substrate; The loading / unloading block includes: a transfer block in which transfer units for transferring the substrate are stacked is provided on the processing block side for transferring the substrate to and from the processing block; a first transport mechanism that transports the substrate between the container placement unit and the delivery block; the processing block further includes a second transport mechanism configured to transport the substrate between the delivery block and the processing unit; The first transport mechanism is a support portion for supporting the substrate; The substrate processing apparatus is configured so that the substrate supported by the support portion can pass through the transfer block in a depth direction intersecting with the width direction in a plan view.

2. The substrate processing apparatus according to claim 1 , wherein the first transport mechanism transfers the substrate to and from the transfer block only from the depth direction.

3. a first blowing unit configured to supply clean gas from above to a first transfer space in the load / unload block in which the first transfer mechanism is provided; the first transport mechanism transfers the substrate to and from the delivery block only from one side in the depth direction; the first blowing unit is configured to supply the clean gas only to the one side in the depth direction of the delivery block in the first transfer space, The substrate processing apparatus according to claim 2 , wherein the other side of the first transfer space in the depth direction from the delivery block is filled with a storage section that stores electrical components.

4. 4. The substrate processing apparatus according to claim 1, wherein the container mounting part is provided on a side of the loading / unloading block opposite to the processing block in the width direction.

5. The substrate processing apparatus according to claim 4 , wherein the first transport mechanism transfers the substrate to and from the container platform from a side of the processing block in the width direction.

6. the first transport mechanism further includes a first guide portion that guides movement of the support portion in a vertical direction and a second guide portion that guides movement of the first guide portion in the depth direction, The substrate processing apparatus according to claim 4 , wherein a size of a gap between the container placement portion and the transfer block in the width direction is larger than a length of the first guide portion and smaller than a length of the support portion.

7. 4. The substrate processing apparatus according to claim 1, wherein the second transport mechanism transfers the substrate to and from the transfer block in the width direction.

8. The processing block is divided into a plurality of blocks in a vertical direction, the second transport mechanism is provided in each of the plurality of blocks; 4. The substrate processing apparatus according to claim 1, wherein the transfer block is provided so as to be capable of transferring the substrate between the transfer block and the second transport mechanism in all of the plurality of blocks.

9. Another block provided on an opposite side of the loading / unloading block in the width direction of the processing block; a second blowing unit configured to blow clean gas from above into a second transfer space in the processing block, the second transfer mechanism being a space in the processing block in which the second transfer mechanism is provided; 4. The substrate processing apparatus according to claim 1, wherein a portion of the second blowing unit is overlapped on the other block.

10. The processing block is divided into a plurality of divided blocks in the width direction, For each of the divided blocks, A plurality of said processing units; 4. The substrate processing apparatus according to claim 1, further comprising a shuttle transport mechanism that transports the substrate only linearly in the width direction.

11. The processing block further includes an intermediate block between adjacent divided blocks, The intermediate block has the transfer block, The substrate processing apparatus according to claim 10 , wherein the shuttle transport mechanism transports the substrate linearly in the width direction between the transfer blocks.

12. The plurality of divided blocks are connected in the width direction, 11. The substrate processing apparatus according to claim 10, wherein the shuttle transport mechanism transports the substrate linearly in the width direction between the transfer unit in the divided block in which the shuttle transport mechanism is provided and the transfer unit in another divided block adjacent to the divided block.

13. The substrate processing apparatus according to claim 12 , wherein a linear transfer path of the wafer W by the shuttle transfer mechanism and the delivery unit through which the shuttle transfer mechanism transfers the substrate overlap with the processing unit in a plan view.

14. The substrate processing apparatus according to claim 12 , wherein the first transport mechanism also transports the substrate to the delivery unit to which the shuttle transport mechanism transports the substrate, within the divided block on the side of the load / unload block in the width direction.

15. the first transport mechanism transfers the substrate to and from the delivery block only from one side in the depth direction; 15. The substrate processing apparatus according to claim 14, wherein the transfer unit to which the shuttle transport mechanism transports the substrate within the divided block on the side of the load-unload block in the width direction is provided on the one side of the transfer block of the load-unload block in the depth direction.

Images