Method for manufacturing light emitting device

Abstract

To provide a method for manufacturing a light emitting device that can increase the bonding strength between a light emitting element and a wiring portion of a substrate.SOLUTION: A method for manufacturing a light emitting device includes the steps of: preparing a light emitting element having a semiconductor structure, an electrode, and an external terminal comprising a first portion located on the semiconductor structure side and a second portion disposed on the first portion and having a smaller area than the first portion in a plan view; preparing a substrate having a wiring portion; bringing the second portion of the external terminal into contact with the wiring portion to bond the light emitting element to the wiring portion; and forming plating that continues to the side surface of the first portion and the side surface of the second portion after the step of bonding the light emitting element and the wiring portion. The thickness of the second portion is 5 μm or less. The plating is formed in such a manner that the plating formed on the wiring portion and the plating formed on the first portion are in contact with each other in the space between the first portion and the wiring portion.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a method for manufacturing a light emitting device. [Background technology]

[0002] For example, Patent Document 1 discloses bonding metal bumps of a semiconductor element to wiring on an insulating substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 9-129648 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide a method for manufacturing a light emitting device that can increase the bonding strength between a light emitting element and a wiring portion of a substrate. [Means for solving the problem]

[0005] According to one aspect of the present invention, a method for manufacturing a light emitting device includes the steps of: preparing a light emitting element having a semiconductor structure, an electrode electrically connected to the semiconductor structure, and an external terminal electrically connected to the electrode, the external terminal having a first portion located on the semiconductor structure side and a second portion located on the first portion and having an area smaller than that of the first portion in a planar view; preparing a substrate having an insulating base and a wiring portion located on an upper surface of the insulating base; bringing the second portion of the external terminal into contact with the wiring portion to bond the light emitting element and the wiring portion; and after the step of bonding the light emitting element and the wiring portion, forming a plating that is continuous on a side surface of the first portion and a side surface of the second portion, the thickness of the second portion being 5 μm or less, and in the step of forming the plating, the plating is formed so that the plating formed on the wiring portion and the plating formed on the first portion are in contact with each other in a space between the first portion and the wiring portion. Effect of the Invention

[0006] According to the present invention, it is possible to provide a method for manufacturing a light emitting device that can increase the bonding strength between a light emitting element and a wiring portion of a substrate. [Brief description of the drawings]

[0007] [Figure 1] 5A to 5C are schematic cross-sectional views for explaining a step of a method for manufacturing the light emitting device according to the embodiment. [Diagram 2] 5A to 5C are schematic cross-sectional views for explaining a step of a method for manufacturing the light emitting device according to the embodiment. [Diagram 3] 5A to 5C are schematic cross-sectional views for explaining a step of a method for manufacturing the light emitting device according to the embodiment. [Figure 4] 5A to 5C are schematic cross-sectional views for explaining a step of a method for manufacturing the light emitting device according to the embodiment. [Diagram 5] FIG. 2 is a schematic plan view of a light emitting element according to the embodiment. [Figure 6] FIG. 6 is a schematic cross-sectional view taken along line VI-VI in FIG. 5. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, the embodiments will be described with reference to the drawings. In each drawing, the same components are given the same reference numerals. Note that, since each drawing is a schematic illustration of the embodiment, the scale, intervals, or positional relationships of each component may be exaggerated, or some components may be omitted. Also, as a cross-sectional view, an end view showing only a cut surface may be shown.

[0009] In the following description, components having substantially the same functions are indicated by common reference symbols, and descriptions thereof may be omitted. In addition, terms indicating specific directions or positions (for example, "upper", "lower", and other terms including these terms) may be used. However, these terms are merely used for the purpose of making the relative directions or positions in the referenced drawings easier to understand. As long as the relationship of the relative directions or positions based on the terms "upper", "lower", etc. in the referenced drawings is the same, the drawings other than those of this disclosure, the actual products, etc. may not be arranged in the same manner as in the referenced drawings.

[0010] The method for manufacturing the light emitting device of the embodiment includes the steps of preparing a light emitting element, preparing a substrate, bonding the light emitting element to a wiring portion of the substrate, and forming a plating. Each step will be described below.

[0011] [Process for preparing light-emitting element] In the step of preparing a light-emitting device, a light-emitting device 100 shown in Fig. 1 is prepared. The light-emitting device 100 has a semiconductor structure 10, an electrode 20 electrically connected to the semiconductor structure 10, and an external terminal 30 electrically connected to the electrode 20.

[0012] <Semiconductor structure 10> The semiconductor structure 10 is made of a nitride semiconductor. In this specification, the term "nitride semiconductor" refers to, for example, In x Al y Ga 1-x-yIt includes all semiconductors with compositions in which the composition ratios x and y are changed within the respective ranges in the chemical formula N (0≦x≦1, 0≦y≦1, x+y≦1). In addition, in the above chemical formula, those that further contain Group V elements other than N (nitrogen) and those that further contain various elements added to control various physical properties such as the conductivity type are also included in the "nitride semiconductor".

[0013] The semiconductor structure 10 has a first surface 10A and a second surface 10B located on the opposite side to the first surface 10A. As described below, the semiconductor structure 10 has an active layer that emits light. The active layer emits light having a peak wavelength of, for example, 210 nm or more and 580 nm or less. The light emitted by the active layer is extracted to the outside of the semiconductor structure 10 mainly from the first surface 10A.

[0014] <Electrode 20> A plurality of electrodes 20 are disposed on the second surface 10B side of the semiconductor structure 10. The plurality of electrodes 20 include an n-side electrode 20n functioning as a cathode electrode and a p-side electrode 20p functioning as an anode electrode. The electrodes 20 may be, for example, a metal layer containing titanium (Ti), rhodium (Rh), gold (Au), platinum (Pt), ruthenium (Ru), or aluminum (Al). The electrodes 20 may be formed of a single metal layer, or may have a laminated structure containing a plurality of metal layers.

[0015] <External terminal 30> The external terminal 30 has an n-side external terminal 30n in contact with the n-side electrode 20n and a p-side external terminal 30p in contact with the p-side electrode 20p. Each external terminal 30 has a first portion 31 and a second portion 32. One light-emitting element 100 may have at least one n-side external terminal 30n and one p-side external terminal 30p. As will be described later with reference to FIG. 5, in this embodiment, one light-emitting element 100 may have, for example, four external terminals 30. The thickness of the external terminal 30 may be, for example, 5 μm or more and 15 μm or less. The thickness of the external terminal 30 is the maximum value of the distance between the first upper surface 31A of the first portion 31 and the second lower surface 32B of the second portion 32.

[0016] The first portion 31 is located closer to the semiconductor structure 10 than the second portion 32, and is in contact with the electrode 20. The first portion 31 is located between the electrode 20 and the second portion 32. The first portion 31 has a first upper surface 31A in contact with the electrode 20, and a first lower surface 31B located on the opposite side of the first upper surface 31A. The first portion 31 also has a first side surface 31C connecting the first upper surface 31A and the first lower surface 31B. The thickness of the first portion 31 can be, for example, 2 μm or more and 5 μm or less. The thickness of the first portion 31 is the maximum value of the distance between the first upper surface 31A and the first lower surface 31B.

[0017] In FIG. 1, the second portion 32 is disposed below the first portion 31. The second portion 32 is disposed on the first lower surface 31B of the first portion 31. The second portion 32 has a second upper surface 32A connected to the first lower surface 31B of the first portion 31 and a second lower surface 32B located on the opposite side of the second upper surface 32A. The second portion 32 also has a second side surface 32C connecting the second upper surface 32A and the second lower surface 32B. The thickness of the second portion 32 is, for example, 3 μm or more and 10 μm or less. The thickness of the second portion 32 is the maximum value of the distance between the second upper surface 32A and the second lower surface 32B.

[0018] The first portion 31 and the second portion 32 are made of, for example, the same metal. For example, gold (Au) or copper (Cu) may be used for the first portion 31 and the second portion 32. At least the second lower surface 32B of the second portion 32 is preferably made of gold.

[0019] 1, the maximum width of the second portion 32 is smaller than the minimum width of the first portion 31. The second portion 32 is not disposed on a part of the first lower surface 31B of the first portion 31.

[0020] 5, the area of ​​the second portion 32 is smaller than the area of ​​the first portion 31. The area of ​​the second lower surface 32B of the second portion 32 is smaller than the area of ​​the first lower surface 31B of the first portion 31. This makes it possible to maintain the contact area between the first portion 31 and the electrode 20 and reduce an increase in the forward voltage Vf.

[0021] The step of preparing the light-emitting element 100 may include, for example, a step of preparing a structure having a semiconductor structure 10 and an electrode 20, and a step of forming an external terminal 30 on the prepared structure by a deposition method using a resist mask having an opening that exposes the electrode 20. In the step of forming the external terminal 30, first, a first portion 31 is formed below the electrode 20 by a deposition method using a first resist mask having an opening that exposes the electrode 20. After the first portion 31 is formed, the first resist mask is removed. After the first resist mask is removed, a second resist mask having an opening that exposes a part of the first portion 31 is formed, and the second portion 32 is formed on the first portion 31 by a deposition method using the second resist mask.

[0022] [Substrate preparation process] In the step of preparing a substrate, as shown in FIG. 2, a substrate 200 having an insulating base material 210 and a wiring portion 220 disposed on the upper surface of the insulating base material 210 is prepared.

[0023] The insulating base material 210 may be made of, for example, resin or ceramic. A plurality of wiring portions 220 are disposed on the upper surface of the insulating base material 210. The plurality of wiring portions 220 include at least a first wiring portion 220n and a second wiring portion 220p. The wiring portions 220 may be made of gold, copper, or the like. The wiring portions 220 may be a single layer or may have a structure in which multiple layers of different metals are laminated. At least the upper surface of the wiring portions 220 is preferably made of gold.

[0024] [Step of bonding the light-emitting element to the wiring part of the substrate] 3, in the process of bonding the light emitting element 100 to the wiring portion 220 of the substrate 200, the second portion 32 of the external terminal 30 is brought into contact with the wiring portion 220 to bond the light emitting element 100 to the wiring portion 220. The n-side external terminal 30n is electrically bonded to the first wiring portion 220n, and the p-side external terminal 30p is electrically bonded to the second wiring portion 220p.

[0025] For example, the second lower surface 32B of the second portion 32 is brought into contact with the upper surface of the wiring portion 220, and a load is applied in a direction from the light emitting element 100 toward the substrate 200 while heating, thereby bonding the second lower surface 32B of the second portion 32 to the upper surface of the wiring portion 220. For example, the second lower surface 32B of the second portion 32 containing gold is bonded to the upper surface of the wiring portion 220 containing gold by direct bonding of gold to gold. The heating temperature is preferably, for example, 100° C. or more and 300° C. or less. The load to be applied is preferably, for example, 500 N or more and 1000 N or less. The time for which the load is applied is preferably, for example, 1 second or more and 60 seconds or less.

[0026] The electrode 20 on which the external terminal 30 of the light emitting element 100 is disposed is likely to have a difference in thickness, and it is difficult to ensure the area of ​​the surface approximately parallel to the upper surface of the wiring section 220 to which the external terminal 30 is bonded. In a plan view, the thickness of the portion of the electrode 20 on which the external terminal 30 is disposed, which is located at the end of the light emitting element 100, is likely to be thinner than the thickness of the electrode 20 located at the central portion including the center of the light emitting element 100. Therefore, the electrode 20 of the portion of the external terminal 30 close to the end of the light emitting element 100 is likely to be relatively thin, and the surface close to the end on the lower surface of the external terminal 30 is likely to be a surface inclined or curved with respect to the upper surface of the wiring section 220. As a result, the area of ​​the surface approximately parallel to the upper surface of the wiring section 220 on the lower surface of the external terminal 30 is reduced, and when the external terminal 30 and the wiring section 220 are bonded, the area of ​​contact between the external terminal 30 and the wiring section 220 of the substrate 200 is reduced. As a result, the bonding strength between the external terminal 30 and the wiring section 220 may be reduced.

[0027] According to this embodiment, the first portion 31 is disposed on the electrode 20, and the second portion 32 is disposed on a surface of the first lower surface 31B of the first portion 31 that is substantially parallel to the upper surface of the wiring portion 220. By disposing the second portion 32 on a surface that is substantially parallel to the upper surface of the wiring portion 220, rather than on a surface that is inclined with respect to the upper surface of the wiring portion 220 located at the end of the first portion 31, the area of ​​the surface that is substantially parallel to the upper surface of the wiring portion 220 on the second lower surface 32B of the second portion 32 can be increased. This increases the contact area between the second lower surface 32B of the second portion 32 and the upper surface of the wiring portion 220, and increases the bonding strength between the external terminal 30 and the wiring portion 220.

[0028] [Plating process] After the step of bonding the light emitting element 100 and the wiring section 220, the plating 300 is formed as shown in Fig. 4. For example, the plating 300 is formed by electrolytic plating or electroless plating. The plating 300 is deposited on the surfaces of the wiring section 220, the external terminal 30, and the electrode 20 that are immersed in the plating solution. The plating 300 is deposited continuously on the side surface of the wiring section 220, the side surface of the external terminal 30, and the side surface of the electrode 20. When the plating 300 is formed by electroless plating, the plating process is performed while the first surface 10A, etc. on which the plating 300 is not to be deposited are covered with a mask.

[0029] In the step of forming the plating 300, the plating 300 is formed so as to be continuous with the first side surface 31C of the first portion 31 and the second side surface 32C of the second portion 32. The plating 300 is formed so that the plating 300 formed on the wiring portion 220 and the plating 300 formed on the first portion 31 come into contact with each other in the space between the first portion 31 and the wiring portion 220. The plating 300 formed in this manner can increase the bonding strength between the external terminal 30 and the wiring portion 220.

[0030] According to the present embodiment, the second portion 32 has a thin thickness of 5 μm or less, so that the plating 300 deposited not only on the second side surface 32C of the second portion 32 but also on the first portion 31 and the wiring portion 220 can easily fill the space between the first portion 31 and the wiring portion 220. As a result, the thickness of the plating 300 formed on the second side surface 32C of the second portion 32 is thicker than the thickness of the plating 300 formed on the first side surface 31C of the first portion 31. The second side surface 32C of the second portion 32 is covered with the thick plating 300, and the contact area between the plating 300 and the wiring portion 220 increases, so that the bonding strength between the light-emitting element 1 and the wiring portion 220 can be increased. The difference between the thickness of the plating 300 formed on the second side surface 32C of the second portion 32 and the thickness of the plating 300 formed on the first side surface 31C of the first portion 31 is, for example, 1 μm or more and 2 μm or less.

[0031] When the thickness of the second portion 32 is greater than 5 μm, the plating 300 is mainly deposited from the second side surface 32C of the second portion 32, and there is little difference between the thickness of the plating 300 formed on the first side surface 31C of the first portion 31 (thickness in a direction perpendicular to the first side surface 31C) and the thickness of the plating 300 formed on the second side surface 32C of the second portion 32 (thickness in a direction perpendicular to the second side surface 32C).

[0032] Through the above steps, a light emitting device 1 including the substrate 200, the light emitting element 100, and the plating 300 is manufactured. For example, a positive potential is applied to the second wiring portion 220p from an external circuit, and the potential of the first wiring portion 220n is set to ground. As a result, a current is supplied from the wiring portion 220 of the substrate 200 to the active layer of the semiconductor structure 10 via the external terminal 30 and the electrode 20, and the active layer emits light. The number of light emitting elements 100 in the light emitting device 1 is not limited to one, and the light emitting device 1 may have a plurality of light emitting elements 100 arranged on one substrate 200.

[0033] In a plan view, the area of ​​second portion 32 is preferably 80% or less, and more preferably 70% or less, of the area of ​​first portion 31. This makes it difficult for second portion 32 to be disposed on a surface of first portion 31 that is inclined with respect to the upper surface of wiring portion 220, and makes it easier to increase the area of ​​a surface of second lower surface 32B of second portion 32 that is approximately parallel to the upper surface of wiring portion 220.

[0034] The thickness of the second portion 32 is preferably thinner than the thickness of the first portion 31. This makes it possible to prevent the end of the second lower surface 32B of the second portion 32 from becoming inclined or curved, and makes it easier to increase the area of ​​the surface of the second lower surface 32B that is approximately parallel to the upper surface of the wiring portion 220. The difference between the thickness of the second portion 32 and the thickness of the first portion 31 is, for example, 1 μm or more and 2 μm or less.

[0035] An example of a detailed configuration of the light emitting element 100 will be described with reference to FIGS. Fig. 5 is a schematic plan view of the second surface 10B side of the semiconductor structure 10. Fig. 6 is a schematic cross-sectional view taken along line VI-VI in Fig. 5. As shown in Fig. 6, there is a height difference between the surfaces of the n-side electrode 20n and the p-side electrode 20p, but the height difference is omitted in Fig. 5 to avoid complicating the illustration.

[0036] 5 and 6, directions are indicated by the X-axis, Y-axis, and Z-axis. The X-axis, Y-axis, and Z-axis are perpendicular to each other. The direction along the X-axis is the first direction X, the direction along the Y-axis is the second direction Y, and the direction along the Z-axis is the third direction Z. In this specification, "planar view" means that the light-emitting element 100 is observed from the second surface 1B side of the semiconductor structure 10.

[0037] 6, the semiconductor structure 10 has an n-side semiconductor layer 11, a p-side semiconductor layer 13, and an active layer 12 located between the n-side semiconductor layer 11 and the p-side semiconductor layer 13 in the third direction Z. The n-side semiconductor layer 11 has a semiconductor layer including an n-type impurity. The p-side semiconductor layer 13 has a semiconductor layer including a p-type impurity. The active layer 12 has, for example, a multiple quantum well (MQW) structure including a plurality of barrier layers and a plurality of well layers.

[0038] The first surface 10A of the semiconductor structure 10 is a surface of the n-side semiconductor layer 11 located opposite to the active layer 12. The first surface 10A may be a rough surface having a plurality of protrusions. This can improve the efficiency of extracting light from the first surface 10A. The shape of the first surface 10A in plan view is, for example, a square or a rectangle. When the shape of the first surface 10A in plan view is a square, the length of one side of the first surface 10A is, for example, 5 μm or more and 100 μm or less.

[0039] The second surface 10B of the semiconductor structure 10 has a first region 10B1 and a second region 10B2. The first region 10B1 is a surface of the p-side semiconductor layer 13 located on the opposite side to the active layer 12. The second region 10B2 is a surface of the n-side semiconductor layer 11 on which the active layer 12 and the p-side semiconductor layer 13 are not disposed. In a plan view, the area of ​​the first region 10B1 is larger than the area of ​​the second region 10B2.

[0040] 5, the n-side electrode 20n and the p-side electrode 20p are spaced apart in the first direction X. The n-side electrode 20n and the p-side electrode 20p have a rectangular shape in plan view with short sides along the first direction X and long sides along the second direction Y. Two n-side external terminals 30n are disposed on the n-side electrode 20n and spaced apart in the second direction Y. Two p-side external terminals 30p are disposed on the p-side electrode 20p and spaced apart in the second direction Y. One external terminal 30 or three or more external terminals 30 may be disposed on each of the n-side electrode 20n and the p-side electrode 20p.

[0041] As described above, the thickness of the electrode 20 located at the end of the light emitting element 100, among the electrodes 20 on which the external terminals 30 are arranged, tends to be thinner than the central portion including the center C of the light emitting element 100 in a plan view. For this reason, as shown in FIG. 5, it is preferable to arrange the second portion 32 biased toward a region closer to the center C of the light emitting element 100 in the first portion 31. With such an arrangement, in a plan view, the second distance between the center of the second portion 32 and the center C of the light emitting element 100 is shorter than the first distance between the center of the first portion 31 and the center C of the light emitting element 100. This allows the second portion 32 to be arranged on a surface of the first portion 31 that is approximately parallel to the upper surface of the wiring portion 220, and the area of ​​the surface of the second lower surface 32B of the second portion 32 that is approximately parallel to the upper surface of the wiring portion 220 can be increased.

[0042] 5, in a plan view, the first portion 31 and the second portion 32 are each shaped like a rectangle, with the first portion 31 having four first side faces 31C and the second portion 32 having four second side faces 32C. The plating 300 continuously covers the four first side faces 31C of the first portion 31 and the four second side faces 32C of the second portion 32.

[0043] 4, of the plating 300 formed on the second side surface 32C of the second portion 32 of the n-side external terminal 30n, the thickness of the plating 300 located on the p-side external terminal 30p side is preferably thinner than the thickness of the plating 300 located on the opposite side to the p-side external terminal 30p. This makes it difficult for the first wiring portion 220n and the second wiring portion 220p to be short-circuited via the plating 300. The difference between the thickness of the plating 300 located on the p-side external terminal 30p side and the thickness of the plating 300 located on the opposite side to the p-side external terminal 30p is, for example, 1 μm or more and 2 μm or less.

[0044] Similarly, for the plating 300 on the p-side external terminal 30p side, it is preferable that the thickness of the plating 300 located on the n-side external terminal 30n side among the plating 300 formed on the second side surface 32C of the second portion 32 of the p-side external terminal 30p is thinner than the thickness of the plating 300 located on the opposite side to the n-side external terminal 30n. This makes it difficult for the first wiring portion 220n and the second wiring portion 220p to be short-circuited through the plating 300. The difference between the thickness of the plating 300 located on the n-side external terminal 30n side and the thickness of the plating 300 located on the opposite side to the n-side external terminal 30n is, for example, 1 μm or more and 2 μm or less.

[0045] By thinning both the plating 300 formed on the second side 32C of the n-side external terminal 30n that is located on the p-side external terminal 30p side, and the plating 300 formed on the second side 32C of the p-side external terminal 30p that is located on the n-side external terminal 30n side, as described above, the first wiring portion 220n and the second wiring portion 220p become less likely to short-circuit.

[0046] In addition to the above-mentioned configuration, the light-emitting element 100 can include a first conductive film 21n, a second conductive film 21p, a third conductive film 22, a first light-reflective member 51, a second light-reflective member 52, an insulating film 62, and a protective film 61.

[0047] <First conductive film 21n, second conductive film 21p> The first conductive film 21n is disposed in a second region 10B2 of the second surface 10B, and is electrically connected to the n-side semiconductor layer 11. The second conductive film 21p is disposed in a first region 10B1 of the second surface 10B via a third conductive film 22, and is electrically connected to the p-side semiconductor layer 13. The first conductive film 21n and the second conductive film 21p may be, for example, a metal layer containing titanium (Ti), rhodium (Rh), gold (Au), platinum (Pt), aluminum (Al), silver (Ag), or ruthenium (Ru). The electrode 20 may be formed of a single metal layer, or may have a laminated structure containing multiple metal layers.

[0048] <Third conductive film 22> The third conductive film 22 is disposed in the first region 10B1 of the second surface 10B. The third conductive film 22 has a function of diffusing the current supplied through the p-side external terminal 30p, the p-side electrode 20p, and the second conductive film 21p in the planar direction of the p-side semiconductor layer 13. Examples of materials for the third conductive film 22 include ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), ZnO, In 2 O 3 etc. can be used.

[0049] <First light reflective member 51> The first light reflective member 51 covers at least the first region 10B1 side of the second surface 10B. The first light reflective member 51 has a high reflectance with respect to the peak wavelength of light emitted by the active layer 12. The reflectance of the first light reflective member 51 with respect to the peak wavelength of light emitted by the active layer 12 is, for example, 60% or more, preferably 70% or more. The light traveling from the active layer 12 toward the second region 10B2 side of the second surface 10B can be reflected toward the first surface 10A by the first light reflective member 51. This can improve the efficiency of extracting light from the first surface 10A. For example, a dielectric multilayer film including a plurality of dielectric films can be used as the first light reflective member 51.

[0050] In FIG. 6, the first light reflective member 51 has a 1n-side opening 51n located below the first conductive film 21n, and a 1p-side opening 51p located below the second conductive film 21p.

[0051] <Second light reflective member 52> The second light reflective member 52 covers at least the first region 10B1 side of the second surface 10B. The second light reflective member 52 covers the first light reflective member 51 arranged in the first region 10B1 of the second surface 10B. The second light reflective member 52 has a high reflectance with respect to the peak wavelength of the light emitted by the active layer 12. The reflectance of the second light reflective member 52 with respect to the peak wavelength of the light emitted by the active layer 12 is, for example, 60% or more, preferably 70% or more. The second light reflective member 52 reflects the light transmitted through the first light reflective member 51 to the first surface 10A side, thereby improving the light extraction efficiency. The second light reflective member 52 is, for example, a metal. The second light reflective member 52 can be, for example, a metal layer containing Al and Ti. The second light reflective member 52 may be composed of a single metal layer, or may be a laminated structure containing multiple metal layers.

[0052] <Insulating film 62> The insulating film 62 is disposed on the second surface 10B side and the side surface 10C of the semiconductor structure 10. The insulating film 62 is, for example, SiO 2, SiON, SiN, etc. can be used. The insulating film 62 has a second n-side opening 62n and a second p-side opening 62p. As shown in Fig. 5, the 2n-side opening 62n is located inside the first n-side opening 51n of the first light reflective member 51 in a planar view. The second p-side opening 62p is located inside the first p-side opening 51p of the first light reflective member 51 in a planar view.

[0053] <Protective film 61> The protective film 61 covers the first surface 10A of the semiconductor structure 10. The transmittance of the protective film 61 with respect to the peak wavelength of the light emitted by the active layer 12 is, for example, 70% or more, and preferably 90% or more. The protective film 61 may be, for example, SiO 2 , SiON, SiN, etc. can be used.

[0054] The n-side electrode 20n is connected to the first conductive film 21n at the first n-side opening 51n and the second n-side opening 62n. The n-side semiconductor layer 11 is electrically connected to the n-side external terminal 30n via the first conductive film 21n and the n-side electrode 20n.

[0055] The p-side electrode 20p is connected to the second conductive film 21p at the first p-side opening 51p and the second p-side opening 62p. The p-side semiconductor layer 13 is electrically connected to the p-side external terminal 30p via the third conductive film 22, the second conductive film 21p, and the p-side electrode 20p.

[0056] On the second surface 10B side of the semiconductor structure 10 of the light emitting element 100, the position where the n-side semiconductor layer 11 and the n-side electrode 20n are electrically connected and the position where the p-side semiconductor layer 13 and the p-side electrode 20p are electrically connected are unlikely to be flat. Therefore, as shown in Fig. 5, it is preferable that the n-side external terminal 30n and the p-side external terminal 30p do not overlap the position where the n-side semiconductor layer 11 and the n-side electrode 20n are electrically connected (the position of the first n-side opening 51n and the second n-side opening 62n) and the position where the p-side semiconductor layer 13 and the p-side electrode 20p are electrically connected (the position of the first p-side opening 51p and the second p-side opening 62p) in a plan view. This makes it easy to increase the area of ​​the surface approximately parallel to the upper surface of the wiring portion 220 on the second lower surface 32B of the external terminal 30.

[0057] An embodiment of the present invention may include the following method for manufacturing a light emitting device.

[0058] [Section 1] preparing a light-emitting element having a semiconductor structure, an electrode electrically connected to the semiconductor structure, and an external terminal electrically connected to the electrode, the external terminal having a first portion located on the semiconductor structure side and a second portion located on the first portion and having an area smaller than that of the first portion in a plan view; preparing a substrate having an insulating base material and a wiring portion disposed on an upper surface of the insulating base material; a step of contacting the second portion of the external terminal with the wiring portion to bond the light emitting element to the wiring portion; forming a continuous plating on a side surface of the first portion and a side surface of the second portion after the step of joining the light emitting element and the wiring portion; Equipped with The thickness of the second portion is 5 μm or less, A method for manufacturing a light emitting device, in which, in the step of forming the plating, the plating is formed in a space between the first portion and the wiring portion so that the plating formed on the wiring portion contacts the plating formed on the first portion. [Section 2] Item 2. The method for manufacturing a light emitting device according to item 1, wherein, in a planar view, a second distance between a center of the second portion and a center of the light emitting element is shorter than a first distance between a center of the first portion and a center of the light emitting element. [Section 3] 3. The method for manufacturing a light emitting device according to item 1 or 2, wherein an area of ​​the second portion is 80% or less of an area of ​​the first portion in a plan view. [Section 4] 4. The method for manufacturing a light emitting device according to any one of items 1 to 3, wherein the second portion has a thickness smaller than a thickness of the first portion. [Section 5] the semiconductor structure includes an n-side semiconductor layer, a p-side semiconductor layer, and an active layer located between the n-side semiconductor layer and the p-side semiconductor layer; the electrodes include an n-side electrode electrically connected to the n-side semiconductor layer and a p-side electrode electrically connected to the p-side semiconductor layer, the external terminals include an n-side external terminal electrically connected to the n-side electrode and a p-side external terminal electrically connected to the p-side electrode, Of the plating formed on the side surface of the second portion of the n-side external terminal, the thickness of the plating located on the p-side external terminal side is thinner than the thickness of the plating located on the opposite side to the p-side external terminal, and / or 5. The method for manufacturing a light emitting device according to any one of items 1 to 4, wherein, of the plating formed on the side surface of the second portion of the p-side external terminal, the thickness of the plating located on the n-side external terminal side is thinner than the thickness of the plating located on the opposite side to the n-side external terminal. [Section 6] the semiconductor structure includes an n-side semiconductor layer, a p-side semiconductor layer, and an active layer located between the n-side semiconductor layer and the p-side semiconductor layer; the electrodes include an n-side electrode electrically connected to the n-side semiconductor layer and a p-side electrode electrically connected to the p-side semiconductor layer, the external terminals include an n-side external terminal electrically connected to the n-side electrode and a p-side external terminal electrically connected to the p-side electrode, 6. The method for manufacturing a light-emitting device according to any one of items 1 to 5, wherein the n-side external terminal and the p-side external terminal do not overlap, in a planar view, a position where the n-side semiconductor layer and the n-side electrode are electrically connected and a position where the p-side semiconductor layer and the p-side electrode are electrically connected.

[0059] The above describes the embodiments of the present invention with reference to specific examples. However, the present invention is not limited to these specific examples. All forms that can be implemented by a person skilled in the art through appropriate design modifications based on the above-described embodiments of the present invention also belong to the scope of the present invention as long as they include the gist of the present invention. In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modified examples and examples of modifications, and these modified examples and examples of modifications also belong to the scope of the present invention. [Explanation of symbols]

[0060] Reference Signs List 1...light emitting device, 10...semiconductor structure, 10A...first surface, 10B...second surface, 10B1...first region, 10B2...second region, 11...n-side semiconductor layer, 12...active layer, 13...p-side semiconductor layer, 20...electrode, 20n...n-side electrode, 20p...p-side electrode, 21n...first conductive film, 21p...second conductive film, 22...third conductive film, 30...external terminal, 30n...n-side external terminal, 30p...p-side external terminal, 31...first portion, 31C...first side surface, 32...second portion, 32C...second side surface, 51...first light reflective member, 52...second light reflective member, 61...protective film, 62...insulating film, 100...light emitting element, 200...substrate, 210...insulating base material, 220...wiring portion, 220n...first wiring portion, 220p...second wiring portion, 300...plating

Claims

1. preparing a light-emitting element having a semiconductor structure, an electrode electrically connected to the semiconductor structure, and an external terminal electrically connected to the electrode, the external terminal having a first portion located on the semiconductor structure side and a second portion located on the first portion and having an area smaller than that of the first portion in a plan view; preparing a substrate having an insulating base material and a wiring portion disposed on an upper surface of the insulating base material; a step of contacting the second portion of the external terminal with the wiring portion to bond the light emitting element to the wiring portion; forming a continuous plating on a side surface of the first portion and a side surface of the second portion after the step of joining the light emitting element and the wiring portion; Equipped with The thickness of the second portion is 5 μm or less, A method for manufacturing a light emitting device, in which, in the step of forming the plating, the plating is formed so that the plating formed on the wiring portion and the plating formed on the first portion are in contact with each other in the space between the first portion and the wiring portion.

2. The method for manufacturing a light emitting device according to claim 1 , wherein, in a plan view, a second distance between a center of the second portion and a center of the light emitting element is shorter than a first distance between a center of the first portion and a center of the light emitting element.

3. The method for manufacturing a light emitting device according to claim 2 , wherein an area of ​​the second portion is 80% or less of an area of ​​the first portion in a plan view.

4. 4. The method for manufacturing a light emitting device according to claim 1, wherein the second portion has a thickness smaller than a thickness of the first portion.

5. The semiconductor structure includes an n-side semiconductor layer, a p-side semiconductor layer, and an active layer located between the n-side semiconductor layer and the p-side semiconductor layer, the electrodes include an n-side electrode electrically connected to the n-side semiconductor layer and a p-side electrode electrically connected to the p-side semiconductor layer; the external terminals include an n-side external terminal electrically connected to the n-side electrode and a p-side external terminal electrically connected to the p-side electrode, Of the plating formed on the side surface of the second portion of the n-side external terminal, the thickness of the plating located on the p-side external terminal side is thinner than the thickness of the plating located on the opposite side to the p-side external terminal, and / or A method for manufacturing a light-emitting device described in any one of claims 1 to 3, wherein, of the plating formed on the side of the second portion of the p-side external terminal, the thickness of the plating located on the n-side external terminal side is thinner than the thickness of the plating located on the opposite side to the n-side external terminal.

6. The semiconductor structure includes an n-side semiconductor layer, a p-side semiconductor layer, and an active layer located between the n-side semiconductor layer and the p-side semiconductor layer, the electrodes include an n-side electrode electrically connected to the n-side semiconductor layer and a p-side electrode electrically connected to the p-side semiconductor layer; the external terminals include an n-side external terminal electrically connected to the n-side electrode and a p-side external terminal electrically connected to the p-side electrode, The method for manufacturing a light-emitting device described in any one of claims 1 to 3, wherein the n-side external terminal and the p-side external terminal do not overlap, in a planar view, with a position where the n-side semiconductor layer and the n-side electrode are electrically connected and a position where the p-side semiconductor layer and the p-side electrode are electrically connected.

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