Semiconductor circuit

Abstract

To provide a semiconductor device with power consumption reduced.SOLUTION: A semiconductor device includes a node ND1, a node ND2, a resistor, a capacitor, and a comparator circuit. The resistor is electrically connected between either a positive electrode or a negative electrode of a secondary battery and a first terminal in series. The resistor has a function to convert current flowing between either the positive electrode or the negative electrode of the secondary battery and the first terminal to a first voltage. The first voltage is added to a voltage of the node ND2 through the capacitor. The comparator circuit has a function to compare the voltage of the ND1 and the voltage of the ND2. The comparator circuit outputs a signal to notify of detecting overcurrent if the voltage of the ND2 is greater than the voltage of the ND1.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a semiconductor device and a method for operating the semiconductor device. One embodiment relates to a battery control circuit, a battery protection circuit, a power storage device, and an electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field relates to an article, a method, or a manufacturing method. , process, machine, manufacture, or composition of matter Therefore, one embodiment of the present invention disclosed in the present specification more specifically relates to The technical fields include display devices, light-emitting devices, power storage devices, imaging devices, storage devices, and their driving Methods or methods for producing them can be mentioned as examples.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. This refers to semiconductors in general. Therefore, semiconductor elements such as transistors and diodes and semiconductor circuits are semiconductors. The present invention is also applicable to display devices, light-emitting devices, lighting devices, electro-optical devices, electronic devices, etc. In some cases, the semiconductor element and the semiconductor circuit are included. , electro-optical devices, imaging devices, and electronic equipment may also be called semiconductor devices. [Background technology]

[0004] In recent years, various types of storage devices such as lithium-ion secondary batteries, lithium-ion capacitors, and air batteries have become available. The development of lithium-ion batteries, which have high power and high energy density, is particularly Secondary batteries are used in mobile phones, smartphones, tablets, and notebook computers. Mobile information terminals, game devices, portable music players, digital cameras, medical equipment, or hardware Hybrid vehicle (HEV), electric vehicle (EV), or plug-in hybrid vehicle (P In line with the development of the semiconductor industry, next-generation clean energy automobiles such as HEVs and electric motorcycles are also Demand for rechargeable batteries has expanded rapidly in line with the recent developments in the information society. It has become indispensable.

[0005] Patent Document 1 discloses a semiconductor device that detects an overcurrent and controls the charging and discharging of a secondary battery. do. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2014-166071 A Summary of the Invention [Problem to be solved by the invention]

[0007] In the configuration shown in Patent Document 1, a constant current source is used to detect overcurrent, which increases power consumption. In addition, in the configuration shown in Patent Document 1, the discharge This is because the resistance of the transistor and the charging transistor varies. It is difficult to improve detection accuracy.

[0008] An object of one embodiment of the present invention is to provide a semiconductor device or the like with reduced power consumption. Another object of the present invention is to provide a semiconductor device or the like that has high accuracy in detecting an overcurrent. Another object of the present invention is to provide a semiconductor device or the like with stable operation. It is an object of the present invention to provide a semiconductor device or the like having high reliability. Another object of the present invention is to provide a semiconductor device or the like having a good thermal conductivity. One of the goals of the project is to provide the following:

[0009] The description of these problems does not preclude the existence of other problems. It is not necessary for the embodiment to solve all of these problems. The above will become apparent from the description in the specification, drawings, claims, etc. It is possible to extract other issues from the descriptions in the patent, claims, etc. [Means for solving the problem]

[0010] One aspect of the present invention is a circuit including a node ND1, a node ND2, a resistor, a capacitor, and a comparison circuit. The semiconductor device has a resistor between one of a positive electrode or a negative electrode of the secondary battery and a first terminal. The resistor is electrically connected in series to one of the positive and negative electrodes of the secondary battery and the first terminal. The first voltage is converted to a first voltage by a capacitance. The voltage at node ND1 is added to the voltage at node ND2. The comparator circuit compares the voltage at node ND1 with the voltage at node ND2. The comparator circuit detects whether the voltage at node ND2 is greater than the voltage at node ND1. If not, a signal is output to notify that an overcurrent has been detected.

[0011] Another embodiment of the present invention is a semiconductor device including first to fourth transistors and a comparator. Either the source or the drain of the transistor is electrically connected to the non-inverting input terminal of the comparator. The source or drain of the second transistor is connected to the inverting input of the comparator. The source or drain of the third transistor is electrically connected to the terminal of the fourth transistor. the source or drain of the third transistor; Or, a resistor is connected between the other of the drain and the other of the source or drain of the fourth transistor. The semiconductor device has the following features.

[0012] The resistance of the resistor may be set to 1 mΩ or more and 10 Ω or less. Alternatively, a first capacitance may be provided on one of the drains. The capacitance value of the first capacitance is 0.01 fF or more. The value should be 100 pF or less. A second capacitance may be provided between the source or the drain of the third transistor. The capacitance value of the capacitor may be set to be 0.01 fF or more and 100 pF or less.

[0013] The first and second transistors preferably include an oxide semiconductor in a semiconductor layer. The fourth transistor preferably includes an oxide semiconductor in a semiconductor layer.

[0014] At least one of the first to fourth transistors is a multi-gate transistor. Good too.

[0015] The potential supplied to the other of the source or drain of the first transistor is It is preferable that the potential be lower than the potential supplied to the other of the source or drain of the first transistor.

[0016] Another aspect of the present invention is a semiconductor device including a first transistor, a second transistor, and a comparator. One of the source and drain of the first transistor is connected to the non-inverting input terminal of the comparator. a first capacitance is provided on one of the source and drain of the first transistor; The source or drain of the second transistor is connected to the inverting input terminal of the comparator. A second capacitor is electrically connected between the resistor and one of the source or drain of the second transistor. The semiconductor device is provided with a

[0017] Another embodiment of the present invention is a semiconductor device provided over a flexible substrate, an insulating sheet, and and a secondary battery.

[0018] The battery pack includes a first diode, a second diode, a second resistor, and a third capacitor. The cathode of the first diode is electrically connected to the positive electrode of the secondary battery. The anode of the first diode is electrically connected to the cathode of the second diode. The second resistor is electrically connected to the anode of the first diode. The third capacitance is connected in parallel with the second diode. .

[0019] One or both of the first diode and the second diode are configured with a transistor. It is also possible. Effect of the Invention

[0020] According to one embodiment of the present invention, a semiconductor device or the like with reduced power consumption can be provided. Alternatively, it is possible to provide a semiconductor device or the like that has high accuracy in detecting an overcurrent. It is possible to provide a semiconductor device having stable operation or a semiconductor device having good reliability. Alternatively, a semiconductor device or the like having good productivity can be provided. Alternatively, a novel semiconductor device or the like can be provided.

[0021] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have all of these effects. Effects other than these may be included in the description, This is self-evident from the description in the drawings, claims, etc. It is possible to extract other effects from any of the descriptions. [Brief description of the drawings]

[0022] [Figure 1] FIG. 1 is a diagram illustrating an example of a configuration of a semiconductor device. [Diagram 2] 2A and 2B are diagrams illustrating an example of the operation of the semiconductor device. [Diagram 3] 3A and 3B are diagrams illustrating an example of the operation of the semiconductor device. [Figure 4] 4A and 4B are diagrams illustrating a configuration example of a semiconductor device. [Diagram 5] 5A to 5D are diagrams showing circuit symbols for transistors. [Figure 6] FIG. 6 is a diagram illustrating a configuration example of a semiconductor device. [Figure 7] 7A and 7B are diagrams illustrating an example of the operation of the semiconductor device. [Figure 8] 8A and 8B are diagrams illustrating an example of the operation of the semiconductor device. [Figure 9] FIG. 9 is a diagram illustrating a configuration example of a semiconductor device. [Figure 10] 10A and 10B are diagrams illustrating an example of the operation of the semiconductor device. [Figure 11] 11A and 11B are diagrams illustrating an example of the operation of the semiconductor device. [Figure 12] FIG. 12 is a diagram illustrating a configuration example of a semiconductor device. [Figure 13] 13A and 13B are diagrams illustrating an example of the operation of the semiconductor device. [Figure 14] 14A and 14B are diagrams illustrating an example of the operation of the semiconductor device. [Figure 15] FIG. 15 is a diagram illustrating a configuration example of a semiconductor device. [Figure 16] FIG. 16 is a diagram illustrating a configuration example of a semiconductor device. [Figure 17] FIG. 17 is a diagram illustrating a configuration example of a semiconductor device. [Figure 18] 18A to 18D are diagrams showing equivalent circuits of the protection device. [Figure 19] 19A and 19B are diagrams showing an equivalent circuit of a protection device. [Figure 20] 20A and 20B are diagrams showing an equivalent circuit of a protection device. [Figure 21] 21A to 21C are diagrams showing equivalent circuits of a protection device. [Figure 22] FIG. 22 is a diagram illustrating a configuration example of a semiconductor device. [Diagram 23] 23A to 23C are diagrams showing equivalent circuits of a protection device. [Figure 24] FIG. 24 is a diagram illustrating a configuration example of a semiconductor device. [Diagram 25] FIG. 25 is a diagram showing an equivalent circuit of a protection device. [Figure 26] FIG. 26 is a diagram illustrating a configuration example of a semiconductor device. [Figure 27] FIG. 27 is a diagram illustrating a configuration example of a semiconductor device. [Figure 28] FIG. 28 is a diagram showing an equivalent circuit of a protection device. [Figure 29] FIG. 29 is a diagram illustrating a configuration example of a semiconductor device. [Diagram 30] FIG. 30 is a diagram illustrating a configuration example of a semiconductor device. [Diagram 31] 31A to 31C are diagrams showing examples of the structure of a transistor. [Diagram 32] 32A to 32C are diagrams showing examples of the structure of a transistor. [Diagram 33] 33A to 33C are diagrams showing examples of the structure of a transistor. [Diagram 34]34A to 34C are diagrams showing examples of the structure of a secondary battery. [Diagram 35] 35A to 35C are diagrams showing structural examples of a secondary battery. [Diagram 36] 36A and 36B are diagrams showing examples of the structure of a wound body and a secondary battery. [Figure 37] FIG. 37 is a diagram illustrating an example of an electronic device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention may be modified in various ways in form and detail without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be modified in various ways. In addition, the present invention is not limited to the above embodiment. In the drawings, the same reference numerals are used to designate the same parts or parts having similar functions. The repeated explanation will be omitted.

[0024] In addition, the position, size, range, etc. of each component shown in the drawings are for the purpose of facilitating understanding of the invention. Therefore, the actual location, size, range, etc. may not be shown. The invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings. For example, In the actual manufacturing process, resist masks, etc., may be unintentionally damaged by etching or other processes. However, this may not be reflected in the diagram to make it easier to understand.

[0025] In addition, in top views (also called "plan views") and perspective views, etc., For this reason, descriptions of some components may be omitted.

[0026] In addition, the terms "electrode" and "wiring" used in this specification and the like do not limit the functionality of these components. For example, an "electrode" may be used as part of a "wiring." In addition, the term "electrode" or "wiring" may be used to refer to the plural "electrodes" or "wirings". This also includes cases where the "line" is formed as a single unit.

[0027] In addition, in this specification, a "terminal" in an electric circuit is a terminal that is used to input or output a current, It refers to the part where pressure is input or output, or where a signal is received or transmitted. In some cases, a part of the wiring or electrode may function as a terminal.

[0028] In this specification, the terms "above" and "below" refer to the positional relationship of components directly above or below each other. For example, "the electrode on insulating layer A" is not limited to being below and in direct contact with the insulating layer A. If the expression is "electrode B", it is not necessary for electrode B to be formed directly on insulating layer A. The inclusion of other components between the edge layer A and the electrode B is not excluded.

[0029] The source and drain functions may also be different in some cases, such as when transistors of different polarities are used, or when When the direction of the current changes during operation of the circuit, the two are interchangeable depending on the operating conditions. Therefore, it is difficult to determine which is the source and which is the drain. In this specification, the terms source and drain may be used interchangeably. It shall be so.

[0030] In this specification, "electrical connection" refers to a direct connection and a connection through some means. This includes cases where the device is connected via "something that has an electrical effect." "Something that has an electrical effect" means something that enables the transmission and reception of electrical signals between connected objects. Therefore, even if it is expressed as "electrically connecting", In real circuits, there may be no physical connections, just wires running along the circuit. .

[0031] In the present specification, "parallel" means that, for example, two straight lines are at an angle of -10° or more and 10° or more. This refers to a state in which the lens is arranged at an angle below 5°. Therefore, this includes cases where the angle is between -5° and 5°. In addition, "perpendicular" and "orthogonal" mean, for example, the angle between two straight lines of 80° or more and 100° or less. This refers to a state in which the two objects are arranged at an angle of 85° or more and 95° or less.

[0032] In this specification, the terms "same," "the same," and "equal" are used to refer to counting values ​​and measurement values. " or "uniform" means plus or minus 20% unless otherwise specified. This includes the following error.

[0033] In addition, in the present specification, when an etching process is performed after forming a resist mask, Unless otherwise specified, the resist mask is removed after the etching process is completed. .

[0034] Voltage is the potential difference between a certain potential and a reference potential (for example, ground potential or source potential). Therefore, voltage and potential are often interchangeable. In this specification and the like, unless otherwise specified, the terms voltage and potential can be interchanged. It shall be so.

[0035] Even if a material is described as a "semiconductor," if its electrical conductivity is sufficiently low, it may be considered an "insulator." Therefore, it is possible to use "semiconductor" as "insulator". In this case, the boundary between "semiconductor" and "insulator" is unclear, and it is difficult to make a strict distinction between the two. Therefore, the terms "semiconductor" and "insulator" in this specification can be read interchangeably. There may be cases where this is possible.

[0036] In addition, even if a material is written as a "semiconductor," if the material has a sufficiently high electrical conductivity, it should be written as a "conductor." Therefore, it is possible to use "semiconductor" as "conductor". In this case, the boundary between "semiconductor" and "conductor" is vague, and it is difficult to make a strict distinction between the two. Therefore, the terms "semiconductor" and "conductor" in this specification can be read interchangeably. There may be cases where this is possible.

[0037] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. It does not indicate any order or ranking, such as the order of processes or stacking. In addition, even if a term is not accompanied by an ordinal number in this specification, etc., it is possible to confuse the constituent elements. In order to avoid this, ordinal numbers may be used in the claims. Even if a term has an ordinal number in the specification, a different ordinal number may be used in the claims. In addition, even if a term is given an ordinal number in this specification, In patent claims, ordinal numbers may be omitted.

[0038] In this specification, the "on state" of a transistor means that the source of the transistor is This refers to a state in which the drain is considered to be electrically shorted (also called the "conducting state"). In addition, the "off state" of a transistor means that the source and drain of the transistor are electrically isolated. This refers to a state in which the conduction state can be regarded as being non-conductive (also called a "non-conductive state").

[0039] In this specification, the term "on-state current" refers to the current that flows between the source and the The term "off-state current" can also refer to the current that flows between the drain and the transistor. It can also refer to the current that flows between the source and drain when the device is in an off state.

[0040] In addition, in this specification, a high power supply potential VDD (hereinafter, simply referred to as "VDD" or "H potential") The low power supply potential VSS is a power supply potential that is higher than the low power supply potential VSS. VSS (hereinafter simply referred to as "VSS" or "L potential") is the potential lower than the high power supply potential VDD. The lowest power supply potential is also referred to as VDD or VSS. For example, if VDD is at ground potential, VSS is at a potential lower than ground potential, and V When SS is at ground potential, VDD is at a potential higher than ground potential.

[0041] In this specification, the term "gate" refers to a gate electrode and a part or whole of a gate wiring. The gate wiring is a wiring that connects at least one transistor gate electrode and another This refers to wiring that electrically connects electrodes to other wiring.

[0042] In this specification, the source includes a source region, a source electrode, and a source wiring. The source region is a part or the whole of the semiconductor layer that has a resistivity of a certain value or less. The source electrode is the conductive layer that is connected to the source region. A source wiring is a wiring that is connected to the source electrode of at least one transistor and another electrode or wiring. This refers to wiring that electrically connects

[0043] In this specification, the term "drain" refers to a drain region, a drain electrode, and a drain It refers to a part or the whole of the wiring. The drain region is the part of the semiconductor layer with a constant resistivity. The drain electrode is the conductive layer connected to the drain region. The drain wiring is a wiring that is connected to the drain electrode of at least one transistor. This refers to wiring that electrically connects to electrodes or other wiring.

[0044] (Embodiment 1) A semiconductor device according to one embodiment of the present invention will be described with reference to drawings.

[0045] <Configuration Example of Semiconductor Device 200A> 1 shows a configuration example of a semiconductor device 200A. The semiconductor device 200A includes terminals 201 to 204, semiconductor device 100C, control circuit 210, potential generating circuit 220, resistor 211, capacitance 212, transistor 213, transistor 214, diode 215, and diode It has 216.

[0046] The semiconductor device 100C includes a terminal R, a terminal RFN, a terminal SH, a terminal SHB, and a terminal OUT The semiconductor device 100C also includes a comparator 101, transistors 111 to It includes a transistor 114 , a capacitor 102 , a capacitor 103 , and a resistor 121 .

[0047] The control circuit 210 has terminals 221 to 225. One terminal of the resistor 211 is a terminal 201 and terminal 203, and the other terminal is electrically connected to terminal 221. One terminal of the capacitor 212 is electrically connected to the terminal 221, and the other terminal is electrically connected to the terminal 222. 2 and terminal 204.

[0048] One of the source and drain of the transistor 213 is electrically connected to the terminal 222 and the terminal 204. The anode of the diode 215 is electrically connected to the terminal 223. is electrically connected to one of the source and drain of the transistor 213. The cathode of 215 is electrically connected to the other of the source or drain of the transistor 213. can be.

[0049] The source or drain of the transistor 214 is connected to the source or drain of the transistor 213. is electrically connected to the other of the drain and the source or drain of the transistor 214. The gate of the transistor 214 is electrically connected to one terminal of the resistor 121. The cathode of the diode 216 is electrically connected to the source of the transistor 214. The anode of the diode 216 is electrically connected to either the source or drain of the transistor. The other of the source and drain of the resistor 121 is electrically connected to the other of the source and drain of the resistor 214. The terminal is electrically connected to the terminal 202 .

[0050] The potential generating circuit 220 generates a potential V R and the function of supplying potential V RFN The control circuit 210 controls the operation of the potential generating circuit 220. It has functions.

[0051] The comparator 101 has a non-inverting input terminal, an inverting input terminal, and an output terminal. When the potential of the non-inverting input terminal is higher than the potential of the inverting input terminal, the parasitic resistor 101 outputs Potential V OUTThe comparator 101 has a function of outputting a high potential as a If the potential at the non-inverting input terminal is lower than the potential at the inverting input terminal, a potential V OUT and The comparator 101 functions as a comparison circuit. The output terminal of the comparator 101 is electrically connected to the terminal OUT. is electrically connected to a terminal 225 of the control circuit 210 via a wiring 122.

[0052] One of the source and the drain of the transistor 111 is electrically connected to the terminal R. The other of the source and drain of the transistor 111 is connected to the non-inverting input terminal of the comparator 101. The gate of the transistor 111 is electrically connected to the terminal SH.

[0053] One electrode of the capacitor 102 is electrically connected to the non-inverting input terminal of the comparator 101. The other electrode of the capacitor 102 is supplied with a reference potential or a fixed potential.

[0054] The other of the source and drain of the transistor 111 and the non-inverting input terminal of the comparator 101 A node where the first electrode of the capacitor 102 is electrically connected to the second electrode of the capacitor 102 is called a node ND1.

[0055] One of the source and drain of the transistor 112 is electrically connected to the terminal RFN. The other of the source and drain of the transistor 112 is connected to the inverting input terminal of the comparator 101. The gate of the transistor 112 is electrically connected to the terminal SH. .

[0056] One electrode of the capacitor 103 is electrically connected to the inverting input terminal of the comparator 101 .

[0057] The other of the source and drain of the transistor 112, and the inverting input terminal of the comparator 101 The node where one electrode of the capacitor 103 is electrically connected to the other electrode of the capacitor 103 is called a node ND2.

[0058] One of the source and drain of the transistor 113 is electrically connected to one terminal of the resistor 121. The other of the source and drain of the transistor 113 is connected to the other The gate of the transistor 113 is electrically connected to the terminal SH. do.

[0059] Either the source or the drain of the transistor 114 is electrically connected to the other terminal of the resistor 121. The other of the source and drain of the transistor 114 is connected to the other The gate of the transistor 114 is electrically connected to the terminal SHB. can be.

[0060] The inverted potential of the terminal SH is supplied to the terminal SHB. For example, when the terminal SH is supplied with an H potential, When the terminal SHB is supplied with the L potential, the terminal SHB is supplied with the L potential. Similarly, when the terminal SH is supplied with the L potential, However, during a certain period of circuit operation, the terminal SHB is supplied with a high potential. There may be cases where the potentials of the terminal SHB and the terminal SH become the same potential.

[0061] The other of the source or drain of the transistor 113 and the other of the source or drain of the transistor 114 The node where the other electrode of the drain and the other electrode of the capacitor 103 are electrically connected is called a node ND3. He said.

[0062] The other of the source or drain of the transistor 214, the source or drain of the transistor 113 The node where one of the drains and one of the terminals of the resistor 121 are electrically connected is called the node NDA. One of the source and drain of the transistor 114, the other terminal of the resistor 121, The node to which the terminal 202 is electrically connected is called a node NDB.

[0063] The positive electrode of the secondary battery 300 is electrically connected to the terminal 203, and the negative electrode is electrically connected to the terminal 204. are connected to the network.

[0064] The transistors 111 to 114 each have a metal oxide semiconductor layer in which a channel is formed. A transistor that uses an oxide semiconductor, which is a type of oxide semiconductor, is also called an OS transistor. In particular, it is preferable to use an OS Preferably, a transistor is used.

[0065] The off-state current of an OS transistor can be made extremely small. The off-state current per 1 μm is 1×10 at room temperature. -20 Less than A, preferably 1×10 - 22 A, more preferably less than 1×10 -24 It can be less than A.

[0066] In addition, the off-state current of OS transistors hardly increases even in high-temperature environments. The off-current hardly increases even in environments with temperatures between 200°C and 300°C. By using OS transistors as the transistors that support the As a result, a highly reliable semiconductor device can be realized.

[0067] By using an OS transistor for the transistor 111, the capacitance 102 is reduced. Alternatively, the capacitance 102 may be omitted, and the parasitic capacitance of a transistor or the like may be replaced by the capacitance 102. 2. As a result, the area occupied by the semiconductor device 100C is reduced. This makes it possible to reduce the area occupied by the semiconductor device 200A.

[0068] Generally, a capacitor has two electrodes facing each other with a dielectric between them. It is proportional to the overlapping area of ​​the electrodes and the relative dielectric constant of the dielectric, and inversely proportional to the distance between the two electrodes. When the capacitance 102 is provided, if the capacitance is too large, the area occupied by the semiconductor device 200A becomes large. In addition, if the capacitance value of the capacitor 102 is large, the charging and discharging of the capacitor 102 may become difficult. Discharging increases power consumption.

[0069] When the capacitor 102 is provided, the capacitance value of the capacitor 102 is preferably 0.01 fF or more and 100 pF or less. F or less, more preferably 0.05 fF to 10 pF, and even more preferably 0.1 fF or less The upper limit should be 1pF or less.

[0070] Similarly, by using an OS transistor for the transistor 112, the capacitance 103 can be reduced. Alternatively, the capacitance 103 can be omitted, and the parasitic capacitance of a transistor or the like can be reduced. It can be used in place of the capacitor 103 .

[0071] When the capacitor 103 is provided, if the capacitance value is too large, the area occupied by the semiconductor device 200A becomes large. In addition, if the capacitance value of the capacitor 103 is large, the charging and discharging of the capacitor 103 may become difficult. This results in increased power consumption due to discharge.

[0072] When the capacitor 103 is provided, the capacitance value of the capacitor 103 is preferably 0.01 fF or more and 100 pF or less. F or less, more preferably 0.05 fF to 10 pF, and even more preferably 0.1 fF or less The upper limit should be 1pF or less.

[0073] In addition, the OS transistor is used in a high-temperature environment (for example, an environment of 50°C or higher and 150°C or lower). Therefore, even in a high temperature environment, the off-current is unlikely to increase. In addition, the potential (charge) supplied to the node ND2 can be held for a long period of time.

[0074] In this manner, the transistor 111 and the capacitor 102 form a memory element 151 . The transistor 112 and the capacitor 103 form a memory element 152. A memory element that uses OS transistors as the transistors that make up the element is called "OS memory." There are cases.

[0075] In addition, OS transistors have a high withstand voltage between the source and drain. The transistor 213 and the transistor 214 may be OS transistors. By using a transistor, a highly reliable semiconductor device can be provided.

[0076] In addition, OS transistors are used in charge control circuits, discharge control circuits, overcurrent detection circuits, and abnormality detection circuits. The sensing circuit, secondary battery control system, etc. are integrated into the BTOS (Battery Operate ing system, or Battery oxide semiconducto It is sometimes referred to as r.

[0077] <Operation Example of Semiconductor Device 200A> The control circuit 210 has a function of selecting the on state or off state of the transistor 213. In addition, the control circuit 210 has a function of selecting the on or off state of the transistor 214. .

[0078] The secondary battery 300 is charged by connecting the positive terminal of an external power source for charging to the terminal 201 and the negative terminal The charging operation is performed by connecting the transistor 214 to the ON state. The current supplied from the external power supply is passed through terminals 203 and 204. Then, by passing the current from terminal 201 to terminal 202, the secondary battery 300 can be charged. Cut.

[0079] The secondary battery 300 is discharged by connecting a load between the terminals 201 and 202 . The discharging operation is performed by turning on the transistor 213. A current flows from terminal 202 to terminal 201 via terminal 4 and terminal 203. During the discharge operation, the direction of the current flowing through resistor 121 is reversed.

[0080] The control circuit 210 also controls the secondary battery 300, such as the charging voltage and temperature of the secondary battery 300. The control circuit 210 detects the state of the secondary battery 300. The charge / discharge control circuit has a function of controlling the execution or stop of the charge and discharge operations.

[0081] Specifically, the control circuit 210 turns off the transistor 213, thereby 00. Also, the control circuit 210 controls the transistor 214 to By turning it off, the charging operation of the secondary battery 300 can be stopped. By turning off either the transistor 213 or the transistor 214, the secondary battery 3 Either the charging or discharging operation of the 00 can be stopped.

[0082] During charging, the semiconductor device 100C supplies a current exceeding a specified value (also called an "overcurrent") to the resistor 121. Specifically, the semiconductor device 100C has a function of detecting the flow of the current. When an overcurrent is detected during charging, the semiconductor device 100C outputs a high potential. OUT ) is supplied to a terminal 225 of the control circuit 210 via a wiring 122. 100C functions as an overcurrent detection circuit during charging operation.

[0083] When a high potential is supplied to the terminal 225, the control circuit 210 of the semiconductor device 200A turns on the transistor By turning off the charger 214, the charging operation is stopped. Therefore, it is possible to prevent the secondary battery 300 from being rapidly degraded in characteristics. The life span of the secondary battery 300 can be extended, and the reliability of the secondary battery 300 can be improved. In addition, the safety of the secondary battery 300 can be improved.

[0084] [Operation Example of Semiconductor Device 100C] The semiconductor device 100C functions as an overcurrent detection circuit. An operation example of the semiconductor device 100C will be described below. FIG. 2 and FIG. 3 show an operation example of the semiconductor device 100C. FIG.

[0085] In addition, in drawings, etc., the potentials of the wiring and electrodes are shown in a simplified manner to make them easier to understand. An "H" indicating H potential or an "L" indicating L potential may be added next to the pole. In addition, wiring and electrodes where a potential change occurs may be marked with "H" or "L" in a box. In addition, when a transistor is in an off state, an "x" is placed over the transistor. Symbols may be added.

[0086] As mentioned above, terminal R has a potential of V R is supplied, and the terminal RFN is at potential V RFN is supplied In this embodiment, the potential V R is set to 1.1V, and the potential V RFN is set to 1.25V.

[0087] First, before charging starts, a high potential is supplied to the terminal SH and a low potential is supplied to the terminal SHB (Figure 2 Then, the transistor 111 is turned on, and the potential of the node ND1 becomes 1.1 V. In addition, the transistor 112 is turned on, and the potential of the node ND2 becomes 1.25 V. Therefore, the potential V output from the comparator 101 OUT becomes the L potential.

[0088] At this point, no current flows through resistor 121, so the nodes NDA and The potential of NDB is 0V (reference potential). When a high potential is applied to the terminal SH, the transistor The transistor 113 is turned on, and the potential of the node ND3 becomes 0V.

[0089] Next, an L potential is supplied to the terminal SH, and an H potential is supplied to the terminal SHB (see FIG. 2B). Then, the transistor 111 is turned off, and the potential of the node ND1 is held. The transistor 112 is turned off, and the potential of the node ND2 is held. The resistor 113 also goes to the off state.

[0090] Next, the charging operation starts. When charging starts, a current I C (See Figure 3A) (see). current I C flows from node NDA to node NDB, so when charging starts, The potential of the node NDB becomes lower than 0V. Therefore, the potential of the node ND3 also becomes lower than 0V. become.

[0091] The resistance value of the resistor 121 is preferably 1 mΩ or more and 10 Ω or less, and more preferably 5 mΩ or more and 5 The resistance value of the resistor 121 is preferably 10 mΩ or more and 1 Ω or less. By changing the value of the overcurrent detected by the semiconductor device 100C, the value of the overcurrent detected by the semiconductor device 100C can be changed. A part of the wiring may function as the resistor 121. In other words, the wiring resistance may be It may also be used as.

[0092] Current value I th Resistance value R of resistor 121 for detecting (A) or more as an overcurrent D (Ω) is , which can be calculated using Equation 1.

[0093]

number

[0094] For example, when the value of the current Ith is set to 1 mA, the potential V RFN is 1.25V, and the potential V R Since is 1.1V, the resistance value R D It can be seen that it is necessary to set it to 150 Ω.

[0095] FIG. 3A shows the resistance R D When the resistance is 150Ω, the current I C 0.8mA flows as a In this case, the potential of the node NDB becomes -0.12V. The potential of node ND3 also becomes -0.12 V. Also, the potential of node ND3 and node ND2 is Capacitive coupling is performed via 103. Therefore, the potential of the node ND2 becomes 1.13 V. The potential of node ND2 remains greater than the potential of node ND1. OUT remains at L potential.

[0096] FIG. 3B shows the resistance R D When the resistance is 150Ω, the current I C A current of 1.1mA flows. In this case, the potential of the node NDB becomes -0.165V. Therefore, the potential of the node ND3 also becomes -0.165V. For the same reason as above, The potential of node ND2 becomes 1.085 V. Then, the potential of node ND2 becomes higher than the potential of node ND1. Also becomes smaller, and the potential V OUT becomes H potential.

[0097] In this manner, an overcurrent during a charging operation can be detected. The device 100C includes a terminal 202, a transistor 213, and a transistor 214 in series. The resistor 121 connected to the transistor 213 detects an overcurrent. In addition, the overcurrent can be accurately controlled without being affected by the variation in the resistance value of the transistor 214. It can be detected.

[0098] The resistor 121 is not limited to a fixed resistor. As shown in FIG. 4A, the resistor 121 may be a variable resistor. By making the resistor 121 a variable resistor, the current value I th Arbitrarily change the value of For example, the current value I th to the optimal value It can be made into a.

[0099] In addition, the transistors 111 to 114, the transistor 213, and the transistor The resistor 214 functions as a switch. The switch switches between a conductive state (ON) and a non-conductive state (OFF). It has a function to switch the state to ON (ON) and OFF (OFF), and has a function to control whether the current flows or not. The source of the transistor corresponds to one end of the switch, and the The drain of the switch corresponds to the other end of the switch. The transistors 111 to 114 included in the device 100C are connected to the switch 111 s to switches 114s.

[0100] In addition, the transistors 111 to 114, the transistor 213, and the transistor Each of the transistors 214 may be a double-gate transistor. 2 shows an example of a circuit symbol for a double-gate transistor 150A.

[0101] The transistor 150A is configured by connecting a transistor Tr1 and a transistor Tr2 in series. In FIG. 5A, one of the source and drain of the transistor Tr1 is connected to the terminal S. The other of the source and drain of the transistor Tr1 is electrically connected to the transistor T It is electrically connected to either the source or drain of transistor Tr2. The other of the drains is electrically connected to the terminal D. In this case, the gates of the transistors Tr1 and Tr2 are electrically connected to each other, and 13 shows the state in which it is electrically connected to the child G.

[0102] The transistor 150A shown in FIG. 5A changes the potential of the terminal G to change the potential of the terminal S and the terminal D. The transistor has the function of switching between a conductive state and a non-conductive state. The transistor 150A is a transistor Tr1 and a transistor Tr2. In other words, in FIG. 5A, the transistor Either the source or the drain of the transistor 150A is electrically connected to the terminal S. The other end of the drain is electrically connected to terminal D, and the gate is electrically connected to terminal G. It can be said that.

[0103] In addition, the transistors 111 to 114, the transistor 213, and the transistor Each of the transistors 214 may be a triple-gate transistor. 1 shows an example of a circuit symbol for a triple-gate transistor 150B.

[0104] The transistor 150B includes a transistor Tr1, a transistor Tr2, and a transistor In FIG. 5B, the source of transistor Tr1 and transistor Tr3 are connected in series. One of the drains is electrically connected to the terminal S, and the other is the source or drain of the transistor Tr1. The other input is electrically connected to one of the source and drain of the transistor Tr2. The other of the source or drain of transistor Tr2 is connected to the source or drain of transistor Tr3. The other of the source or drain of the transistor Tr3 is electrically connected to In FIG. 5B, the transistor T r1, the gates of transistors Tr2 and Tr3 are electrically connected, 13 shows a state in which the terminal G is electrically connected to the terminal G.

[0105] The transistor 150B shown in FIG. 5B changes the potential of the terminal G to change the potential of the terminal S and the terminal D. The triple-gate type has the function of switching between a conductive state and a non-conductive state. The transistor 150B includes a transistor Tr1, a transistor Tr2, , and the transistor Tr3 is included, and functions as one transistor. That is, in FIG. 5B, one of the source and drain of the transistor 150B is connected to the terminal S. The other of the source and drain is electrically connected to terminal D, and the gate is It can be said that it is electrically connected to terminal G.

[0106] Such as transistor 150A and transistor 150B, which have multiple gates, A transistor with multiple gates electrically connected is called a "multi-gate transistor." These transistors are sometimes called "multi-gate transistors" or "multi-gate transistors."

[0107] In addition, the transistors 111 to 114, the transistor 213, and the transistor Each of the transistors 214 may be a transistor having a back gate. FIG. 5D shows an example of a circuit symbol for a transistor 150C having a back gate. 1 shows an example circuit symbol for a transistor 150D having a back gate.

[0108] The transistor 150C has a structure in which the gate and the back gate are electrically connected to each other. The transistor 150D has a configuration in which the back gate is electrically connected to the terminal BG. The gate is disposed so that the channel forming region of the semiconductor layer is sandwiched between the gate and the back gate. The backgate can function similarly to a gate.

[0109] By electrically connecting the gate and back gate, the on-current of a transistor can be increased. In addition, the threshold voltage of the transistor can be adjusted by independently changing the potential of the back gate. The voltage can be varied.

[0110] <Modification> FIG. 6 shows a configuration example of a semiconductor device 200Aa, which is a modified example of the semiconductor device 200A. In the embodiment, in order to reduce repetition of the description, the differences from the semiconductor device 200A will be mainly described. The semiconductor device 200Aa is a semiconductor device 100C that is used in place of the semiconductor device 100C. The semiconductor device 200A differs from the semiconductor device 200A in that it has a.

[0111] The semiconductor device 100Ca is a semiconductor device 100C including the transistor 113 and the transistor 1 In the semiconductor device 100Ca, the capacitor 103 has a configuration in which the terminal SHB is removed. The other electrode is electrically connected to the other terminal of the resistor 121. In Aa, the node where the other electrode of the capacitance 103 and the other terminal of the resistor 121 are electrically connected is In the semiconductor device 200Aa, the source of the transistor 214 is called a node NDB. The node where the other of the drains and one terminal of the resistor 121 are electrically connected is called a node NDA. say.

[0112] The semiconductor device 100Ca has fewer components than the semiconductor device 100C, and therefore occupies a smaller area. In addition, since the semiconductor device 100Ca does not have the terminal SHB, The terminal 227 can be eliminated from the control circuit 210 included in the semiconductor device 200Aa.

[0113] [Operation Example of Semiconductor Device 100Ca] The semiconductor device 100Ca functions as an overcurrent detection circuit, similar to the semiconductor device 100C. An operation example of the semiconductor device 100Ca will be described with reference to FIGS. FIG. 8 is a diagram showing an operating state of the semiconductor device 100Ca.

[0114] First, before charging starts, a high potential is applied to the terminal SH (see Figure 7A). The transistor 111 is turned on, and the potential of the node ND1 becomes 1.1 V. 112 is turned on, and the potential of the node ND2 becomes 1.25 V. The potential V output from the OUT becomes the L potential.

[0115] At this time, since no current flows through resistor 121, the potential of node NDB is 0V. (reference potential).

[0116] Next, an L potential is supplied to the terminal SH (see FIG. 7B). Then, the transistor 111 is turned off. In the same manner, the transistor 112 is turned off, and the potential of the node ND1 is held. The potential of the node ND2 is maintained.

[0117] Next, the charging operation starts. When charging starts, a current I C (See Figure 8A) (see). current I C flows from node NDA to node NDB, so when charging starts, The potential of the node NDB becomes lower than 0 V. FIG. 8A shows the resistance R D 150 When Ω, the current I C In this case, the node The potential of NDB is −0.12 V. The node NDB and the node ND2 have a capacitance 103. Therefore, the potential of the node ND2 becomes 1.13 V. The potential of node ND2 remains greater than the potential of node ND1. Therefore, the potential V OUT is the L potential It remains as it is.

[0118] FIG. 8B shows the resistance R D When the resistance is 150Ω, the current I C A current of 1.1mA flows. In this case, the potential of the node NDB becomes -0.165V. For the same reason, the potential of the node ND2 becomes 1.085V. The potential of node ND1 becomes smaller than the potential of node ND1, and the potential V OUT becomes H potential.

[0119] In this manner, an overcurrent during a charging operation can be detected. The device 200Aa has fewer components than the semiconductor device 200A, and therefore occupies less space. It can be made smaller.

[0120] Note that the semiconductor device according to one embodiment of the present invention should not be interpreted as being limited to the circuit diagram shown in this embodiment. In the semiconductor device according to one embodiment of the present invention, This also includes cases where the circuit has a configuration equivalent to that of the above.

[0121] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is possible.

[0122] (Embodiment 2) In this embodiment, another structural example of a semiconductor device according to one embodiment of the present invention will be described with reference to drawings. He explains.

[0123] <Configuration Example of Semiconductor Device 200B> 9 shows a configuration example of the semiconductor device 200B. Therefore, in order to reduce the repetition of the description, in this embodiment, the semiconductor device 2 This article will mainly explain the differences from 00A.

[0124] The semiconductor device 200B is different from the semiconductor device 100C in that it includes a semiconductor device 100D. The semiconductor device 100D is different from the semiconductor device 200A. R, a terminal RFN, a terminal SH, a terminal SHB, and a terminal OUT. 100D includes a comparator 101, transistors 111 to 114, and a capacitor 1 02, capacitance 103, and resistor 121.

[0125] In the semiconductor device 100D, one of the source and drain of the transistor 111 is connected to a terminal The other of the source and drain of the transistor 111 is electrically connected to the The gate of the transistor 111 is electrically connected to the inverting input terminal of the comparator 101. It is electrically connected to terminal SH.

[0126] One electrode of the capacitor 102 is electrically connected to the inverting input terminal of the comparator 101 . The other electrode of the capacitor 102 is supplied with a reference potential or a fixed potential.

[0127] The other of the source and drain of the transistor 111, and the inverting input terminal of the comparator 101 The node where one electrode of the capacitor 102 is electrically connected to the other electrode of the capacitor 102 is called a node ND1.

[0128] One of the source and the drain of the transistor 112 is electrically connected to the terminal R. The other of the source and drain of the transistor 112 is connected to the non-inverting input terminal of the comparator 101. The gate of the transistor 112 is electrically connected to the terminal SH.

[0129] One electrode of the capacitor 103 is electrically connected to the non-inverting input terminal of the comparator 101. .

[0130] The other of the source and drain of the transistor 112 and the non-inverting input terminal of the comparator 101 A node where the first electrode of the capacitor 102 and one electrode of the capacitor 103 are electrically connected is called a node ND2.

[0131] One of the source and drain of the transistor 113 is electrically connected to one terminal of the resistor 121. The other of the source and drain of the transistor 113 is connected to the other The gate of the transistor 113 is electrically connected to the terminal SH. do.

[0132] Either the source or the drain of the transistor 114 is electrically connected to the other terminal of the resistor 121. The other of the source and drain of the transistor 114 is connected to the other The gate of the transistor 114 is electrically connected to the terminal SHB. can be.

[0133] The other of the source or drain of the transistor 113 and the other of the source or drain of the transistor 114 The node where the other electrode of the drain and the other electrode of the capacitor 103 are electrically connected is called a node ND3. He said.

[0134] <Operation Example of Semiconductor Device 200B> The semiconductor device 100D of the semiconductor device 200B has a resistor 121 that is greater than or equal to a prescribed value during a discharging operation. When a current (also called "overcurrent") flows, it has the function of detecting it. The semiconductor device 100D outputs an H potential when it detects an overcurrent during a discharging operation. The device 100D functions as an overcurrent detection circuit during the discharging operation. Force (potential V OUT ) is supplied to a terminal 225 of the control circuit 210 via a wiring 122.

[0135] When an H potential is supplied to the terminal 225, the control circuit 210 turns the transistor 213 off. By not discharging due to an overcurrent, the secondary battery 300 is prevented from suddenly This can prevent rapid deterioration of the characteristics of the secondary battery 300, thereby extending the battery life of the secondary battery 300. In addition, the reliability of the secondary battery 300 can be improved. Safety can be improved.

[0136] [Operation Example of Semiconductor Device 100D] The semiconductor device 100D functions as an overcurrent detection circuit. An operation example of the semiconductor device 100D will be described. 0D. As described above, in this embodiment, the potential V R to 1.1V and the potential V RFN is set to 1.25V.

[0137] First, before the discharge starts, a high potential is applied to the terminal SH, and a low potential is applied to the terminal SHB (Figure 1 0A). Then, the transistor 112 is turned on, and the potential of the node ND2 becomes 1. In addition, the transistor 111 is turned on, and the potential of the node ND1 becomes 1.2 V. 5V. Therefore, the potential V OUT becomes the L potential.

[0138] At this point, no current flows through resistor 121, so the nodes NDA and The potential of NDB is 0V (reference potential). When a high potential is applied to the terminal SH, the transistor The transistor 113 is turned on, and the potential of the node ND3 becomes 0V.

[0139] Next, an L potential is supplied to the terminal SH, and an H potential is supplied to the terminal SHB (see FIG. 10B). Then, the transistor 111 is turned off, and the potential of the node ND1 is held. Therefore, the transistor 112 is turned off, and the potential of the node ND2 is held. The transistor 113 also goes to the off state.

[0140] Next, the discharge operation starts. When the discharge starts, a current I C (Figure 11A reference). current I C flows from node NDB to node NDA, so discharging begins. Therefore, the potential of the node ND3 is also higher than 0V. It becomes.

[0141] By changing the resistance value of the resistor 121, the value of the overcurrent detected by the semiconductor device 100D is changed. The resistor 121 may be a variable resistor.

[0142] FIG. 11A shows the resistance R D When the resistance is 150Ω, the current I C The current is 0.8mA. In this case, the potential of the node NDB becomes 0.12V. The potential of node ND3 also becomes 0.12 V. Also, the potential of node ND3 and node ND2 is 1 Therefore, the potential of the node ND2 becomes 1.22V. The potential of node ND1 remains greater than the potential of node ND2. OUT teeth It remains at L potential.

[0143] FIG. 11B shows the resistance R D When the resistance is 150Ω, the current I C The current is 1.1mA. In this case, the potential of the node NDB becomes 0.165V. Therefore, the potential of the node ND3 also becomes 0.165V. For the same reason as above, the potential of the node ND2 The potential of the node ND1 becomes 1.265 V. Then, the potential of the node ND1 becomes higher than the potential of the node ND2. The potential V OUT becomes H potential.

[0144] In this manner, an overcurrent occurring during a discharging operation can be detected. The device 100D includes a terminal 202, a transistor 213, and a transistor 214 in series. The resistor 121 connected to the transistor 213 detects an overcurrent. In addition, the overcurrent can be accurately controlled without being affected by the variation in the resistance value of the transistor 214. It can be detected.

[0145] <Modification> FIG. 12 shows a configuration example of a semiconductor device 200Ba which is a modification of the semiconductor device 200B. In the embodiment, in order to reduce repetition of the description, the differences from the semiconductor device 200B will be described. The semiconductor device 200Ba will be mainly described. The semiconductor device 200B differs from the semiconductor device 200B in that it has a capacitance Da.

[0146] The semiconductor device 100Da is a semiconductor device 100D including the transistor 113 and the transistor 1 In the semiconductor device 100Da, the capacitor 103 has a configuration in which the terminal SHB is removed. The other electrode is electrically connected to the other terminal of the resistor 121. In Ba, the node where the other electrode of the capacitance 103 and the other terminal of the resistor 121 are electrically connected is In the semiconductor device 200Ba, the source of the transistor 214 is called a node NDB. The node where the other of the drains and one terminal of the resistor 121 are electrically connected is called a node NDA. say.

[0147] The semiconductor device 100Da has fewer components than the semiconductor device 100D, and therefore occupies a smaller area. In addition, since the semiconductor device 100Da does not have the terminal SHB, The terminal 227 can be eliminated from the control circuit 210 included in the semiconductor device 200Ba.

[0148] [Operation Example of Semiconductor Device 100Da] The semiconductor device 100Da functions as an overcurrent detection circuit, similar to the semiconductor device 100D. An operation example of the semiconductor device 100Da will be described with reference to FIGS. 13 and 14. 14 is a diagram showing an operating state of the semiconductor device 100Da.

[0149] First, before the discharge starts, a high potential is applied to the terminal SH (see FIG. 13A). The transistor 112 is turned on, and the potential of the node ND2 becomes 1.1 V. The comparator 111 is turned on, and the potential of the node ND1 becomes 1.25 V. The voltage V output from the OUT becomes the L potential.

[0150] At this point, no current flows through resistor 121, so the nodes NDA and The potential of the NDB is 0V (reference potential).

[0151] Next, an L potential is supplied to the terminal SH (see FIG. 13B). Then, the transistor 111 turns on. In the same manner, the transistor 112 is turned off, and the potential of the node ND1 is held. This causes the potential of the node ND2 to be held constant.

[0152] Next, the discharge operation starts. When the discharge starts, a current I C flows (Figure 14A reference). current I C flows from node NDB to node NDA, so discharging begins. The potential of the node NDB becomes higher than 0V.

[0153] FIG. 14A shows the resistance R D When the resistance is 150Ω, the current I C The current is 0.8mA. In this case, the potential of the node NDB becomes 0.12V. The potential of node ND3 also becomes 0.12 V. Also, the potential of node NDB and node ND2 is 1 Therefore, the potential of the node ND2 becomes 1.22V. The potential of node ND1 remains greater than the potential of node ND2. OUT teeth It remains at L potential.

[0154] FIG. 14B shows the resistance R D When the resistance is 150Ω, the current I C The current is 1.1mA. In this case, the potential of the node NDB becomes 0.165V. For the same reason, the potential of the node ND2 becomes 1.265V. Then, the potential of the node ND1 The potential of node ND1 becomes smaller than the potential of node ND2, and the potential V OUT becomes H potential.

[0155] In this manner, an overcurrent occurring during a discharging operation can be detected. The device 200Ba has fewer components than the semiconductor device 200B, and therefore occupies less space. It can be made smaller.

[0156] Note that the semiconductor device according to one embodiment of the present invention should not be interpreted as being limited to the circuit diagram shown in this embodiment. In the semiconductor device according to one embodiment of the present invention, This also includes cases where the circuit has a configuration equivalent to that of the above.

[0157] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is possible.

[0158] (Embodiment 3) In this embodiment, another structural example of a semiconductor device according to one embodiment of the present invention will be described with reference to drawings. He explains.

[0159] <Configuration Example of Semiconductor Device 200C> FIG. 15 shows a configuration example of the semiconductor device 200C. 1 and 2. The semiconductor device 200A and the semiconductor device 200B are modified examples. In the embodiment, differences from the semiconductor device 200A or the semiconductor device 200B will be mainly described. Reveal.

[0160] The semiconductor device 200C has a control circuit 210A instead of the control circuit 210. The control device 200C includes both the semiconductor device 100C and the semiconductor device 100D. Circuit 210A is a modified version of control circuit 210, and in addition to having the same functions as control circuit 210, It has a function of controlling the semiconductor device 100C and the semiconductor device 100D.

[0161] The control circuit 210A has a terminal 225a and a terminal 225b as the terminal 225. 26 has terminals 226a and 226b, and terminal 227 has terminals 227a and and terminal 227b.

[0162] The terminal 225a is electrically connected to the terminal OUT of the semiconductor device 100C via the wiring 122a. The terminal 225b is electrically connected to the terminal OUT of the semiconductor device 100D via the wiring 122b. The terminal 226a is electrically connected to the terminal SH of the semiconductor device 100C. The terminal 226b is electrically connected to the terminal SH of the semiconductor device 100D. The terminal 227b is electrically connected to the terminal SHB of the semiconductor device 100C. The terminal SHB is electrically connected to the terminal SHB of the device 100D.

[0163] The potential generating circuit 220 is connected to the terminal R of the semiconductor device 100C and the terminal R of the semiconductor device 100D. potential V R and a function of supplying the terminal RFN of the semiconductor device 100C and the terminal RFN of the semiconductor device 100 A potential V is applied to the terminal RFN of D. RFN and a function of supplying the

[0164] The control circuit 210A has a function of controlling the semiconductor device 100C and the semiconductor device 100D. Therefore, the semiconductor device 200C has a function of detecting an overcurrent during a charging operation and a function of detecting an overcurrent during a discharging operation. By using the semiconductor device 200C, This can further extend the battery life of the secondary battery 300. In addition, the reliability of the secondary battery 300 can be improved. In addition, the safety of the secondary battery 300 can be further improved. Cut.

[0165] As shown in FIG. 16, in a semiconductor device 200C, the resistor The resistor 121 can be used in common with the semiconductor device 100D. In other words, the number of components constituting the semiconductor device 200C can be reduced. This reduces the number of parts required.

[0166] In addition, in the semiconductor device 200C, the semiconductor device 100Ca is used instead of the semiconductor device 100C. Similarly, the semiconductor device 100Da may be used in place of the semiconductor device 100D. The semiconductor device 200C is provided with one or both of the semiconductor device 100Ca and the semiconductor device 100Da. By using both, the number of components of the semiconductor device 200C can be further reduced. This allows the number of parts constituting the semiconductor device 200C to be further reduced.

[0167] Note that the semiconductor device according to one embodiment of the present invention should not be interpreted as being limited to the circuit diagram shown in this embodiment. In the semiconductor device according to one embodiment of the present invention, This also includes cases where the circuit has a configuration equivalent to that of the above.

[0168] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is possible.

[0169] (Embodiment 4) In this embodiment, another structural example of a semiconductor device according to one embodiment of the present invention will be described with reference to drawings. He explains.

[0170] <Configuration Example of the Semiconductor Device 200Ad> FIG. 17 shows a configuration example of the semiconductor device 200Ad. Therefore, in order to reduce the repetition of the description, the semiconductor device 200Ad is The following mainly describes the differences from the semiconductor device 200A.

[0171] The semiconductor device 200Ad has a configuration in which a protection device 250 is added to the semiconductor device 200A. The protection device 250 has a terminal VP, a terminal VN, and a terminal SIG. The terminal VN is electrically connected to the terminal 201, and the terminal VN is electrically connected to the terminal 202. The terminal VP is electrically connected to the positive electrode of the secondary battery 300, and the terminal VN is electrically connected to the negative electrode of the secondary battery 300. The terminal SIG is electrically connected to the terminal OUT of the semiconductor device 100C. In addition, the terminal SIG is electrically connected to a terminal 225 of the control circuit 210.

[0172] [Protective device 250] The protection device 250 is an ESD (Electro Static Discharge) protection device. The high voltage noise may cause damage to and malfunction of the control circuit 210 and the semiconductor device 100C. This prevents damage such as electric shock and increases the reliability of the semiconductor device 200Ad.

[0173] FIG. 18A shows an example of an equivalent circuit diagram of the protection device 250. The protection device 250 shown in FIG. , a diode 251 a , a diode 251 b , a resistor 252 , and a capacitor 253 . One terminal of the resistor 252 is electrically connected to the terminal SIG, and the other terminal is connected to the diode 25 The cathode of the diode 251a is electrically connected to the anode of the terminal VP and electrically connected to the

[0174] One electrode of the capacitor 253 is electrically connected to the other terminal of the resistor 252. The anode of the diode 251b is electrically connected to the terminal VN. The cathode is electrically connected to the anode of the diode 251a. That is, one electrode of the capacitor 253 is electrically connected to the cathode of the diode 251b. The other electrode of the capacitor 253 is electrically connected to the anode of the diode 251b. 53 and the diode 251b are connected in parallel.

[0175] In the steady state, the terminal VP is the high potential side and the terminal VN is the low potential side, so the diode 25 A reverse bias is applied to the diode 251a and the diode 251b. No current flows from terminal VP to terminal VN. However, due to ESD phenomena, If the potential of terminal VN unexpectedly becomes higher than that of terminal VP, a continuity state will be established between terminals VP and VN. As a result, damage and malfunction of the semiconductor device 200Ad can be prevented.

[0176] In addition, the signal output from the OUT terminal is supplied to the SIG terminal, but this signal is in a steady state. In the steady state, the potential is higher than the potential of the terminal VN and lower than the potential of the terminal VP. No current flows from terminal SIG to terminal VP and terminal VN in 50. However, E If the terminal SIG unexpectedly becomes a potential that exceeds the terminal VP or the terminal VN due to an SD phenomenon or other reason, When a voltage lower than this is applied, either terminal VP or terminal VN and terminal SIG are in a conductive state. This makes it possible to prevent damage and malfunction of the semiconductor device 200Ad.

[0177] Moreover, the resistor 252 and the capacitor 253 are connected in series and function as a high-pass filter. The high-frequency high-voltage noise applied to the terminal SIG is The current is released to terminal VN via

[0178] The resistance value of the resistor 252 is preferably 10 Ω or more and 1 kΩ or less, and more preferably 50 Ω or more and 500 Ω or less. The capacitance value of the capacitor 253 is preferably 0.1 pF or more and 100 pF or less, and more preferably 1 pF or more. 10 pF or less is more preferable.

[0179] As shown in FIG. 19A, a capacitor 254 is provided between the other terminal of the resistor 252 and the terminal VP. The capacitance value of the capacitor 254 may be approximately the same as that of the capacitor 253.

[0180] In addition, the diodes 251a and 251b can be replaced with transistors. FIG. 18B shows a case where the diode 251a is replaced with a transistor 251aT. 2 is an equivalent circuit diagram of the protection device 250 in which the node 251b is replaced with a transistor 251bT. The gate of the transistor 251aT is electrically connected to one of the source and the drain. This allows the transistor 251aT to function as a diode. Either the source or the drain, which is electrically connected to the gate, functions as the anode, and the source The other of the source or drain functions as the cathode.

[0181] The transistors 251aT and 251bT are OS transistors. Since the oxide semiconductor has a band gap of 2 eV or more, the off-current is remarkably low. Not only is the dielectric strength between the source and drain high, but the diode also has a low This means that the reverse current is small and breakdown is less likely to occur.

[0182] In addition, the transistors 251aT and 251bT each have a back gate. In the case of using a transistor having a back gate, The gate and the back gate can be electrically connected (see FIG. 18C). The port may be electrically connected to the terminal VN (see FIG. 18D).

[0183] Also, as shown in FIG. 19B, a plurality of diodes 251a may be connected in parallel. A plurality of diodes 251b may be connected in parallel to the diode 251a. By connecting the diode 251b in parallel, the current bypass capability of the protection device 250 can be increased. In addition, even if the diode 251a and the diode 251b are partially damaged, the protection is possible. The function of the protection device 250 can be maintained. Therefore, the redundancy of the protection device 250 is improved. It is possible.

[0184] Also, as shown in FIG. 20A, a plurality of diodes 251a may be connected in series. In FIG. 20A, two diodes 251b may be connected in series. In this example, two diodes, 251a and 251b, are connected in series. The diode 251a and the multiple diodes 251b are connected in series to form a diode Since the reverse bias of each terminal is reduced, the withstand voltage of the protection device 250 can be increased. Therefore, the reliability of the protection device 250 can be improved.

[0185] FIG. 21A shows a case where the diode 251a is replaced with a transistor 251aT. An equivalent circuit diagram of the protection device 250 shown in FIG. 20A with transistor 251bT replacing 1b 21B and 21C show transistors 251aT and 251 The protection device 250 shown in FIG. 20A when a transistor having a back gate is used at bT FIG. 21B is an equivalent circuit diagram showing an example in which the gate and the back gate are electrically connected. FIG 21C shows an example in which the back gate is electrically connected to the terminal VN.

[0186] As shown in FIG. 20B, a plurality of diodes 251a may be connected in series and in parallel. Similarly, multiple diodes 251b may be connected in series and in parallel. , two diodes 251a connected in series, and two diodes 251 b shows an example of connecting three diodes in parallel. This makes it possible to improve the redundancy and dielectric strength of the protection device 250. This can improve the reliability of the device 250.

[0187] <Configuration Example of Semiconductor Device 200AdA> FIG. 22 shows a configuration example of a semiconductor device 200AdA. Therefore, in order to reduce the repetition of the description, the semiconductor device 200 The following mainly describes the differences between the semiconductor device 200Ad and the semiconductor device 200Ad of the semiconductor device 200Ad. A has a protection device 250A in place of the protection device 250 of the semiconductor device 200Ad.

[0188] In addition, for example, the control circuit 210 and / or the semiconductor device 100C may have a back gate. The back gate of the transistor is supplied with a potential lower than the negative electrode potential. In such a case, it is preferable to use the protection device 250A instead of the protection device 250. stomach.

[0189] FIG 23A is an equivalent circuit diagram of the protection device 250A. The protection device 250A shown in FIG 23A The protection device 250 shown in FIG. 20A includes two diodes 251c, a capacitor 255, and a resistor One electrode of the capacitor 255 is electrically connected to the terminal VN, and the other electrode The pole is electrically connected to the anode of the first diode 251c. The cathode of 251c is electrically connected to the anode of a second diode 251c. The cathode of the second diode 251c is electrically connected to the terminal VN. One terminal of the first diode 251 is electrically connected to the terminal VBG, and the other terminal of the second diode 251 is electrically connected to the terminal VBG. The terminal VBG is electrically connected to the anode of the control circuit 210 and / or Alternatively, it is electrically connected to the back gate of the transistor included in the semiconductor device 100C.

[0190] In FIG. 23A, diodes 251a, 251b, and 251c are Although two of each are shown connected in series, three or more of each can be connected in series. The diodes 251a, 251b, and 251c may be It may consist of just one of them.

[0191] 23B and 23C show a case where the diode 251a is replaced with a transistor 251aT. Diode 251b is replaced with transistor 251bT, and diode 251c is replaced with transistor 23B and 23C are equivalent circuit diagrams of the protection device 250A in which the resistor 251cT is replaced with a resistor 251cT. In 23C, transistor 251aT, transistor 251bT, and transistor 2 51cT is shown for transistors with back gates, but these transistors The transistor may have no back gate. FIG. 23B shows a transistor having a gate and a back gate. FIG. 23C shows an example in which the back gate is electrically connected to the terminal VN. An example of connecting to

[0192] <Configuration Example of Semiconductor Device 200AdB> FIG. 24 shows a configuration example of the semiconductor device 200AdB. Therefore, in order to reduce the repetition of the description, the semiconductor device 200 The following mainly describes the differences between the semiconductor device 200Ad of the semiconductor device 200Ad of the semiconductor device 200AdB. B has a protection device 250B instead of the protection device 250 of the semiconductor device 200Ad.

[0193] The protection device 250B is a modified example of the protection device 250. Instead of the terminal SIG of 50, the terminal SIG_in and the terminal SIG_out are provided. The terminal SIG_in is electrically connected to the terminal OUT of the semiconductor device 100C. ut is electrically connected to a terminal 225 via a wiring 122 .

[0194] [Protective device 250B] FIG. 25 shows an example of an equivalent circuit diagram of the protection device 250B. The protection device 250B is the same as that shown in FIG. The protection device 250 shown in FIG. 1 has a resistor 262 added to it. The other terminal of resistor 262 is electrically connected to terminal SIG_ou t is electrically connected.

[0195] The resistance value of the resistor 262 may be set to the same value as the resistor 252. The signal passes through protection device 250B before being supplied to terminal 225. Thus, the signal path A protective device may be provided along the way.

[0196] <Configuration Example of Semiconductor Device 200Bd> FIG. 26 shows a configuration example of a semiconductor device 200Bd. The semiconductor device 200Bd is a modification of the semiconductor device 200B. Therefore, in order to reduce the repetition of the description, the semiconductor device 200Bd is The following mainly describes the differences between the semiconductor device 200Bd and the semiconductor device 200Ad. This section will mainly explain the differences from 200B.

[0197] The semiconductor device 200Bd is a semiconductor device that is used in place of the semiconductor device 100C of the semiconductor device 200Ad. Therefore, the terminal SIG is electrically connected to the terminal OUT of the semiconductor device 100D. Connected.

[0198] The configuration of the semiconductor device 200Bd is the same as that of the semiconductor device 200Ad and the semiconductor device 200 This can be understood by taking into consideration 00B. Therefore, detailed explanation will be omitted here.

[0199] <Configuration Example of Semiconductor Device 200Cd> FIG. 27 shows a configuration example of a semiconductor device 200Cd. The semiconductor device 200Cd is a modification of the semiconductor device 200C. Therefore, in order to reduce the repetition of the description, the semiconductor device 200Cd is The following mainly describes the differences between the semiconductor device 200Cd and the semiconductor device 200Ad. This section will mainly explain the differences from the 200C.

[0200] The semiconductor device 200Cd has a configuration in which a protection device 250C is added to the semiconductor device 200C. The protection device 250C is a modified example of the protection device 250. Instead of the terminal SIG of the device 250, the device has terminals SIG1 and SIG2. The terminal SIG1 is electrically connected to the terminal OUT of the semiconductor device 100C. The terminal SIG2 is electrically connected to the terminal 225a of the circuit 210A. The terminal SIG2 is electrically connected to the terminal OUT of the control circuit 210A. 5b and is electrically connected to

[0201] [Protective device 250C] FIG. 28 shows an example of an equivalent circuit diagram of the protection device 250C. The protection device 250C includes a diode 251a_1, diode 251b_1, diode 251a_2, diode 251b _2, resistor 252_1, resistor 252_2, capacitance 253_1, and capacitance 253_2. do.

[0202] One terminal of the resistor 252_1 is electrically connected to the terminal SIG1, and the other terminal is a diode. The anode of the diode 251a_1 is electrically connected to the cathode of the diode 251a_1. The node is electrically connected to terminal VP.

[0203] One electrode of the capacitor 253_1 is electrically connected to the other terminal of the resistor 252_1. The other electrode of the diode 251b_1 is electrically connected to the terminal VN. The cathode is electrically connected to the terminal VN, and the anode of the diode 251a_1 is electrically connected to the are electrically connected.

[0204] One terminal of the resistor 252_2 is electrically connected to the terminal SIG2, and the other terminal is a diode. The anode of the diode 251a_2 is electrically connected to the cathode of the diode 251a_2. The node is electrically connected to terminal VP.

[0205] One electrode of the capacitor 253_2 is electrically connected to the other terminal of the resistor 252_2. The other electrode of the diode 251b_1 is electrically connected to the terminal VN. The cathode is electrically connected to the terminal VN, and the anode of the diode 251a_2 is electrically connected to the are electrically connected.

[0206] The protection device 250C has a configuration in which two protection devices 250 are connected in parallel. Therefore, the above-described modified example of the protection device 250 can also be applied to the protection device 250C.

[0207] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is possible.

[0208] (Embodiment 5) In this embodiment mode, a structure of a transistor applicable to the semiconductor device described in the above embodiment mode will be described. Specifically, a semiconductor device having a stack of transistors with different electrical characteristics will be described. The configuration will be described. By adopting this configuration, it is possible to increase the degree of freedom in designing a semiconductor device. In addition, by stacking transistors having different electrical characteristics, This allows for increased integration of devices.

[0209] The semiconductor device shown in FIG. 29 includes a transistor 400, a transistor 500, and a capacitor 600. FIG. 31A is a cross-sectional view of a transistor 500 in the channel length direction. FIG. 31B is a cross-sectional view of the transistor 500 in the channel width direction, and FIG. 4 is a cross-sectional view of 400 in the channel width direction.

[0210] The transistor 500 is an OS transistor. Since the current is extremely small, by using this for a transistor in a semiconductor device, It is possible to retain the written data voltage or charge for a long period of time. Refresh operations are infrequent or not required, so it is semi- The power consumption of the semiconductor device can be reduced.

[0211] The semiconductor device described in this embodiment includes a transistor 400, a transistor The transistor 500 is disposed above the transistor 400. The capacitor 600 is provided above the transistor 400 and the transistor 500. It is being done.

[0212] The transistor 400 is disposed on a substrate 311, and includes a conductor 316, an insulator 315, and a substrate 316. 11, a semiconductor region 313 serving as a source region or a drain region, The transistor 400 has a resistive region 314a and a low resistive region 314b. For example, the present invention can be applied to the transistors included in the comparator 101 in the above embodiment. It is possible.

[0213] The transistor 400 is formed by forming a semiconductor region 313 on the upper surface and a channel region 313 as shown in FIG. The side surfaces in the width direction are covered with the conductor 316 via the insulator 315. By making the resistor 400 a fin type, the effective channel width is increased, The on-characteristics of the transistor 400 can be improved. Since the temperature can be increased, the off-state characteristics of the transistor 400 can be improved. .

[0214] The transistor 400 may be either a p-channel type or an n-channel type.

[0215] The region in which the channel of the semiconductor region 313 is formed, the region in the vicinity thereof, the source region, or the drain region In the low resistance region 314a and the low resistance region 314b, which are to be the drain region, silicon is It is preferable that the semiconductor material includes a silicon-based semiconductor, and it is preferable that the semiconductor material includes single crystal silicon. Or Ge (germanium), SiGe (silicon germanium), GaAs (gallium The insulating layer may be made of a material having a thickness of 100 nm, such as gallium aluminum arsenide (GaAlAs), or the like. By applying stress to the crystal lattice and changing the lattice spacing, we have developed silicon with controlled effective mass. Alternatively, GaAs and GaAlAs may be used to form a transistor. The 400 is a HEMT (High Electron Mobility Transistor) tor).

[0216] The low resistance region 314a and the low resistance region 314b are semiconductor regions applied to the semiconductor region 313. In addition to the material, elements that provide n-type conductivity, such as arsenic or phosphorus, or p-type conductivity, such as boron, are added. The element contains an element that imparts electrical conductivity.

[0217] The conductor 316 that functions as the gate electrode is made of an element that imparts n-type conductivity, such as arsenic or phosphorus. Semiconductor materials such as silicon that contain elements that give them p-type conductivity, such as boron or arsenic. A conductive material such as a metal material, an alloy material, or a metal oxide material can be used.

[0218] In addition, since the work function is determined by the conductor material, the selection of the conductor material In this case, the threshold voltage of the transistor can be adjusted. It is preferable to use materials such as tantalum nitride or tantalum oxide. To achieve this, metal materials such as tungsten and aluminum are used as laminations for the conductors. is preferable, and tungsten is particularly preferable in terms of heat resistance.

[0219] Note that the transistor 400 shown in FIG. 29 is just an example, and the present invention is not limited to this structure. For example, a semiconductor device may be used as an OS transistor. A unipolar circuit consisting of only n-channel transistors (such as n-channel transistors) In the case where the transistor 400 is made of an oxide The transistor may have a similar structure to that of the transistor 500 using a semiconductor. Details of 500 will be given later.

[0220] Covering the transistor 400 are an insulator 320, an insulator 322, an insulator 324, and an insulator 326. The bodies 326 are stacked in order.

[0221] The insulators 320, 322, 324, and 326 may be, for example, oxide. Silicon, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, oxide Aluminum oxynitride, aluminum oxynitride, aluminum nitride, or the like may be used.

[0222] In this specification, silicon oxynitride refers to a material containing more oxygen than nitrogen as its composition. Silicon oxide nitride refers to a material that contains more nitrogen than oxygen. In this specification, aluminum oxynitride refers to a material having a large amount of aluminum. Aluminium oxide nitride refers to a material that contains more oxygen than nitrogen as a component. indicates a material that contains more nitrogen than oxygen.

[0223] The insulator 322 smoothes out the steps caused by the transistor 400 and other elements disposed below it. For example, the top surface of the insulator 322 may have a function as a planarizing film. In order to improve the flatness, the surface is flattened by a flattening process such as chemical mechanical polishing (CMP). It's fine.

[0224] The insulator 324 is also provided with a transistor-insulating layer 324, which is connected to the substrate 311 or the transistor 400. A film having a barrier property to prevent diffusion of hydrogen and impurities is used in the area where the capacitor 500 is provided. It is preferable that

[0225] An example of a film having a barrier property against hydrogen is silicon nitride formed by a CVD method. Here, a semiconductor having an oxide semiconductor such as the transistor 500 can be used. When hydrogen diffuses into the element, the characteristics of the semiconductor element may deteriorate. A film that suppresses hydrogen diffusion is provided between the transistor 500 and the transistor 400. Specifically, a film that suppresses hydrogen diffusion is preferably a film that reduces the amount of hydrogen desorption. The membrane.

[0226] The amount of desorption of hydrogen can be analyzed, for example, by using thermal desorption spectroscopy (TDS). For example, the amount of hydrogen desorbed from the insulator 324 was measured by TDS analysis when the surface temperature of the film was 5 In the range of 0°C to 500°C, the amount of desorption converted to hydrogen atoms is Converted to 10 x 10 15 atoms / cm 2Less than or equal to 5×10 15 at oms / cm 2 The following is acceptable.

[0227] It is preferable that the insulator 326 has a lower dielectric constant than the insulator 324. For example, The dielectric constant of the insulator 326 is preferably less than 4, more preferably less than 3. The relative dielectric constant of the insulating material 26 is preferably 0.7 times or less than the relative dielectric constant of the insulator 324, and more preferably 0.6 times or less. It is more preferable to use a material with a low dielectric constant as the interlayer film to reduce the parasitic capacitance between wiring lines. It is possible.

[0228] Additionally, the insulators 320, 322, 324, and 326 have a capacitance of 600 conductor 328 and conductor 330 connected to transistor 500 are embedded. The conductor 328 and the conductor 330 function as plugs or wiring. In addition, the conductor having the function of a plug or wiring can be used to integrate a plurality of structures. In addition, in this specification and the like, a wiring and a device connected to the wiring may be referred to as a The plug may be an integral part. In other words, a part of the conductor may function as a wiring. , and a portion of the conductor may also function as a plug.

[0229] The materials for each plug and wiring (conductor 328, conductor 330, etc.) include metal materials, alloys, Conductive materials such as gold, metal nitride, or metal oxide materials are used as single or multilayered layers. High melting point materials such as tungsten and molybdenum, which have both heat resistance and electrical conductivity, can be used. It is preferable to use a point material, preferably tungsten. Alternatively, aluminum It is preferable to form the wiring layer from a low-resistance conductive material such as aluminum or copper. This can reduce the wiring resistance.

[0230] A wiring layer may be provided on the insulator 326 and the conductor 330. For example, in FIG. An insulator 350, an insulator 352, and an insulator 354 are stacked in this order. In addition, a conductor 356 is formed in the insulators 350, 352, and 354. The conductor 356 functions as a plug or wiring that connects to the transistor 400. The conductor 356 is made of the same material as the conductors 328 and 330. It can be established as follows.

[0231] For example, the insulator 350 has a barrier property against hydrogen, similar to the insulator 324. It is preferable to use an insulator. In addition, the conductor 356 has a barrier property against hydrogen. In particular, the insulator 350 has a barrier property against hydrogen. A conductor having a barrier property against hydrogen is formed in the opening. The transistor 400 and the transistor 500 can be separated by a barrier layer. Therefore, the diffusion of hydrogen from the resistor 400 to the transistor 500 can be suppressed.

[0232] As a conductor having a barrier property against hydrogen, for example, tantalum nitride or the like is used. In addition, by laminating tantalum nitride and highly conductive tungsten, The diffusion of hydrogen from the transistor 400 can be suppressed while maintaining the conductivity of the transistor 400. In this case, the tantalum nitride layer having a barrier property against hydrogen It is preferable that the insulating body 350 has a structure in which the insulating body 350 is in contact with the insulating body 350.

[0233] A wiring layer may be provided on the insulator 354 and the conductor 356. For example, in FIG. An insulator 360, an insulator 362, and an insulator 364 are stacked in this order. In addition, a conductor 366 is formed in the insulators 360, 362, and 364. The conductor 366 functions as a plug or wiring. , conductor 328, and conductor 330 may be formed using materials similar to those of the conductor 320.

[0234] For example, the insulator 360 has a barrier property against hydrogen, similar to the insulator 324. It is preferable to use an insulator. The conductor 366 has a barrier property against hydrogen. It is preferable that the insulating material 360 contains a conductor. In particular, the insulating material 360 has a barrier property against hydrogen. A conductor having a barrier property against hydrogen is formed in the opening. The transistor 400 and the transistor 500 can be separated by a barrier layer. Therefore, the diffusion of hydrogen from the resistor 400 to the transistor 500 can be suppressed.

[0235] A wiring layer may be provided on the insulator 364 and the conductor 366. For example, in FIG. An insulator 370, an insulator 372, and an insulator 374 are stacked in this order. In addition, a conductor 376 is formed in the insulators 370, 372, and 374. The conductor 376 functions as a plug or wiring. , conductor 328, and conductor 330 may be formed using materials similar to those of the conductor 320.

[0236] For example, the insulator 370 has a barrier property against hydrogen, similar to the insulator 324. It is preferable to use an insulator. The conductor 376 has a barrier property against hydrogen. It is preferable that the insulating material 370 contains a conductor. In particular, the insulating material 370 has a barrier property against hydrogen. A conductor having a barrier property against hydrogen is formed in the opening. The transistor 400 and the transistor 500 can be separated by a barrier layer. Therefore, the diffusion of hydrogen from the resistor 400 to the transistor 500 can be suppressed.

[0237] A wiring layer may be provided on the insulator 374 and the conductor 376. For example, in FIG. An insulator 380, an insulator 382, ​​and an insulator 384 are stacked in this order. In addition, a conductor 386 is formed in the insulators 380, 382, ​​and 384. The conductor 386 functions as a plug or wiring. , conductor 328, and conductor 330 may be formed using materials similar to those of the conductor 320.

[0238] For example, the insulator 380 has a barrier property against hydrogen, similar to the insulator 324. It is preferable to use an insulator. The conductor 386 has a barrier property against hydrogen. In particular, the insulator 380 has a barrier property against hydrogen. A conductor having a barrier property against hydrogen is formed in the opening. The transistor 400 and the transistor 500 can be separated by a barrier layer. Therefore, the diffusion of hydrogen from the resistor 400 to the transistor 500 can be suppressed.

[0239] In the above, the wiring layer including the conductor 356, the wiring layer including the conductor 366, and the conductor 376 The wiring layer including the conductor 386 and the wiring layer including the conductor 387 have been described above. However, the semiconductor device to be used is not limited to this. Alternatively, the number of wiring layers may be three or less, or the number of wiring layers similar to the wiring layer including the conductor 356 may be five or more. Good too.

[0240] On the insulator 384, an insulator 510, an insulator 512, an insulator 514, and an insulator 516 are formed. The insulators 510, 512, 514, and 516 are stacked in this order. It is preferable that any of the insulating bodies 516 is made of a material having a barrier property against oxygen and hydrogen. stomach.

[0241] For example, the insulator 510 and the insulator 514 may include, for example, the substrate 311 or the transistor. Hydrogen and impurities are introduced from the region where the transistor 400 is provided to the region where the transistor 500 is provided. It is preferable to use a film having a barrier property to prevent diffusion. The same materials as in 4 can be used.

[0242] As an example of a film that has a barrier property against hydrogen, silicon nitride formed by CVD method is used. Here, a semiconductor element including an oxide semiconductor, such as the transistor 500, The diffusion of hydrogen may deteriorate the characteristics of the semiconductor device. A film that suppresses hydrogen diffusion is used between the transistor 500 and the transistor 400. Specifically, the film that suppresses hydrogen diffusion is a film that has a small amount of hydrogen desorption. .

[0243] In addition, as a film having a barrier property against hydrogen, for example, an insulator 510 and an insulator 5 14 uses metal oxides such as aluminum oxide, hafnium oxide, and tantalum oxide. It is preferred.

[0244] In particular, aluminum oxide is highly resistant to oxygen and hydrogen, which can cause fluctuations in the electrical characteristics of transistors. The membrane has a high blocking effect, preventing both impurities such as oxygen and water from penetrating the membrane. Aluminum oxide is highly resistant to hydrogen, moisture, and other elements during and after the transistor manufacturing process. It is possible to prevent impurities from being mixed into the transistor 500. This can suppress the release of oxygen from the oxide that constitutes the transistor. Suitable for use as a protective film for 500.

[0245] For example, the insulator 512 and the insulator 516 are made of the same material as the insulator 320. In addition, by using materials with a relatively low dielectric constant for these insulators, , the parasitic capacitance occurring between the wirings can be reduced. The body 516 may be a silicon oxide film, a silicon oxynitride film, or the like.

[0246] In addition, the insulators 510, 512, 514, and 516 are each provided with a conductor 5 18, and conductors (e.g., conductor 503) constituting the transistor 500 are embedded. The conductor 518 is connected to the capacitor 600 or the transistor 400. The conductor 518 functions as a plug or wiring. It may be provided using materials similar to those of the body 330 .

[0247] In particular, the insulator 510 and the conductor 518 in the area in contact with the insulator 514 are oxidized to oxygen, hydrogen, It is preferable that the conductive material has a barrier property against water. The transistor 400 and the transistor 500 have a barrier property against oxygen, hydrogen, and water. The transistor 400 can be separated from the transistor 500 by a layer Diffusion can be suppressed.

[0248] Above the insulator 516 is a transistor 500 .

[0249] As shown in FIGS. 31A and 31B, transistor 500 includes an insulator 514 and an insulator A conductor 503 disposed so as to be embedded in an insulator 516, and an insulator 516 and a conductor 5 03, an insulator 520 disposed on the insulator 520, and an insulator 522 disposed on the insulator 520; An insulator 524 is disposed on the insulator 522, and an oxide layer 525 is disposed on the insulator 524. 30a, an oxide 530b disposed on the oxide 530a, and an oxide 530b disposed on the oxide 530b. Conductor 542a and conductor 542b are spaced apart from each other, and conductor 542a and conductor The conductive body 542a is disposed on the conductive body 542b, and an opening is formed between the conductive body 542a and the conductive body 542b so as to overlap the conductive body 542a. The insulating material 580 is disposed on the bottom and sides of the opening, and the oxide 530c is disposed on the bottom and sides of the opening. 0c, and a conductor 550 is disposed on the surface of the insulator 550. 60 and has.

[0250] As shown in FIG. 31A and FIG. 31B, the oxide 530a, the oxide 530b, the conductor The insulator 544 is disposed between the conductors 542a and 542b and the insulator 580. As shown in FIG. 31A and FIG. 31B, the conductor 560 is preferably made of an insulator 5 50, and a conductor 560a provided inside the conductor 560a so as to be embedded inside the conductor 560a. It is preferable that the conductor 560b is provided. As shown, an insulator 574 is disposed over an insulator 580, a conductor 560, and an insulator 550. It is preferable that the above-mentioned arrangement is adopted.

[0251] In this specification, the oxide 530a, the oxide 530b, and the oxide 530c are They are sometimes collectively referred to as Oxide 530.

[0252] In the transistor 500, the region where the channel is formed and the vicinity thereof are oxidized. The structure shown is one in which three layers of a substrate 530a, an oxide 530b, and an oxide 530c are laminated. However, the present invention is not limited thereto. For example, a single layer of oxide 530b, A two-layer structure of the oxide 530b and the oxide 530a, a two-layer structure of the oxide 530b and the oxide 530c, Alternatively, a stacked structure of four or more layers may be provided. Although the conductor 560 is shown as a two-layer laminate structure, the present invention is not limited thereto. For example, the conductor 560 may have a single-layer structure or a laminated structure of three or more layers. In addition, the transistor 500 shown in FIG. 29 and FIG. 31A is only an example, and the structure is not limited thereto. However, the type of transistor is not limited to a specific one, and an appropriate transistor may be used depending on the circuit configuration and driving method.

[0253] Here, the conductor 560 functions as a gate electrode of the transistor, and the conductors 542a and The conductor 542b functions as a source electrode and a drain electrode, respectively. As shown, the conductor 560 is inserted through the opening in the insulator 580 and into the conductors 542a and 542b. The conductor 560, the conductor 542a, and the conductor 542b are formed so as to be embedded in the sandwiched region. The arrangement of the conductive body 542b is selected to be self-aligned with respect to the opening of the insulator 580. That is, In the transistor 500, the gate electrode is connected between the source electrode and the drain electrode. Therefore, the conductor 560 can be aligned with the substrate 520 by providing a margin for alignment. Since the transistor 500 can be formed without any additional steps, the area occupied by the transistor 500 can be reduced. This allows miniaturization and high integration of semiconductor devices.

[0254] Furthermore, a conductor 560 is formed in a self-aligned manner in the region between the conductors 542a and 542b. Therefore, the conductor 560 has an overlapping area with the conductor 542a or the conductor 542b. As a result, no gap is formed between the conductor 560 and the conductors 542a and 542b. Therefore, the parasitic capacitance of the transistor 500 can be reduced. It is possible to improve the speed and have high frequency characteristics.

[0255] Conductor 560 may function as a first gate (also called a top gate) electrode. In addition, the conductor 503 functions as a second gate (also called a bottom gate) electrode. In this case, the potential applied to the conductor 503 may be different from the potential applied to the conductor 560. The threshold voltage of the transistor 500 is controlled by changing the voltages independently, without linking them together. In particular, applying a negative potential to the conductor 503 turns on the transistor 50 It is possible to make the threshold voltage of 0 higher than 0V and reduce the off-current. Therefore, applying a negative potential to the conductor 503 increases the current flow rate of the conductor 560 compared to when no negative potential is applied. The drain current when the applied potential is 0V can be reduced.

[0256] The conductor 503 is disposed so as to overlap the oxide 530 and the conductor 560. Therefore, when a potential is applied to the conductor 560 and the conductor 503, The electric field generated by the conductor 503 is connected to the electric field generated by the conductor 503, and a chalcogenide is formed in the oxide 530. The nozzle forming area can be covered.

[0257] In this specification, a pair of gate electrodes (a first gate electrode and a second gate electrode) The structure of the transistor that electrically surrounds the channel formation region by the electric field of surr This is called an S-channel structure. In this case, the surrounded channel (S-channel) structure is The acid in contact with the conductor 542a and the conductor 542b which function as the electrode and the drain electrode The side and periphery of the oxide 530 are I-type like the channel formation region. In addition, the side and periphery of the oxide 530 in contact with the conductor 542a and the conductor 542b The side can be I-shaped like the channel formation region because it is in contact with the insulator 544. In this specification and the like, type I can be treated as being equivalent to high-purity genuine, as described below. In addition, the S-channel structure disclosed in this specification and the like can be a fin type structure or a planar type structure. The S-channel structure is different from the short channel effect. In other words, it is possible to provide a transistor in which the short channel effect is less likely to occur.

[0258] The conductor 503 has the same configuration as the conductor 518, and the insulators 514 and 5 A conductor 503a is formed in contact with the inner wall of the opening 16, and a conductor 503b is formed further inside. In the transistor 500, the conductor 503a and the conductor 503b are Although a laminated structure is shown, the present invention is not limited to this. The electric conductor 503 may be provided as a single layer or a laminated structure of three or more layers.

[0259] Here, the conductor 503a is a material that prevents the diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, and copper atoms. It is preferable to use a conductive material that has a function of suppressing the impurities from penetrating the impurities. Alternatively, the diffusion of oxygen (e.g., at least one of oxygen atoms, oxygen molecules, etc.) is suppressed. It is preferable to use a conductive material having the above-mentioned function (i.e., being difficult for oxygen to permeate). In this specification, the function of suppressing the diffusion of impurities or oxygen means the function of suppressing the diffusion of the above impurities or oxygen. The function is to suppress the diffusion of any one or all of the above oxygen.

[0260] For example, the conductor 503a has a function of suppressing the diffusion of oxygen, so that the conductor 503b This can prevent the conductivity from decreasing due to oxidation.

[0261] In addition, when the conductor 503 also functions as a wiring, the conductor 503b is made of tungsten, copper, Alternatively, it is preferable to use a highly conductive material containing aluminum as a main component. In this embodiment, the conductor 503 is illustrated as a laminate of the conductor 503a and the conductor 503b. However, the conductor 503 may have a single layer structure.

[0262] The insulators 520, 522, and 524 function as a second gate insulating film. has.

[0263] Here, the insulator 524 in contact with the oxide 530 has more oxygen than satisfies the stoichiometric composition. In other words, the insulator 524 has an excess oxygen region. It is preferable that the insulator containing such excess oxygen is connected to the oxide 530. By providing the oxide 530 as a O :oxygen vacanc y) can be reduced, thereby improving the reliability of the transistor 500. When hydrogen enters the oxygen vacancy in the oxide 530, the defect (hereinafter, V O Sometimes called H ) can act as a donor, generating electrons as carriers. Some of these may combine with oxygen, which bonds with metal atoms, to generate electrons that act as carriers. Therefore, a transistor using an oxide semiconductor containing a large amount of hydrogen is a normally-on transistor. In addition, hydrogen in the oxide semiconductor is easily degraded by stress such as heat or an electric field. Because hydrogen is easily mobile, the reliability of transistors deteriorates when a large amount of hydrogen is contained in an oxide semiconductor. In one embodiment of the present invention, the V in the oxide 530 O Reduce H as much as possible It is preferable to make the V O H In order to obtain an oxide semiconductor with sufficient reduction in impurities, it is necessary to remove impurities such as moisture and hydrogen from the oxide semiconductor. The oxide semiconductor is supplied with oxygen by removing the hydrogen (sometimes referred to as dehydration or dehydrogenation treatment). It is important to supplement the oxygen deficiency by supplying oxygen (sometimes referred to as oxygen addition treatment). VO The oxide semiconductor in which impurities such as H are sufficiently reduced is used as the channel formation region of the transistor. By using this, it is possible to impart stable electrical properties.

[0264] As an insulator having an excess oxygen region, specifically, an oxide film in which some oxygen is released by heating is used. It is preferable to use a material that releases oxygen when heated. Thermal Desorption Spectroscopy (RDS) analysis revealed that the The amount of oxygen released is calculated to be 1.0 x 10 18 atoms / cm 3 More than 1.0x, preferably 10 19 atoms / cm 3 More preferably, 2.0×10 19 atoms / cm 3 or more, or 3.0×10 20 atoms / cm 3 The oxide film is as described above. The surface temperature of the membrane during the above TDS analysis is 100°C to 700°C, or 10 The range of 0°C or more and 400°C or less is preferred.

[0265] In addition, the insulator having the excess oxygen region is brought into contact with the oxide 530 and then heat-treated, and the micro Alternatively, one or more of the following processing may be performed: By this, water or hydrogen in the oxide 530 can be removed. In 30, a reaction occurs in which the VoH bond is broken, in other words, "V O H → Vo + H This reaction occurs, and some of the hydrogen produced is dehydrogenated. Combined with element, H 2 O is removed from the oxide 530 or the insulator adjacent to the oxide 530. In addition, some of the hydrogen may be gettered into the conductor 542.

[0266] The microwave treatment may be carried out using, for example, an apparatus having a power source for generating high-density plasma; Alternatively, it is preferable to use an apparatus having a power source for applying RF to the substrate side. For example, oxygen By using a gas containing oxygen and high-density plasma, high-density oxygen radicals are generated. By applying RF to the substrate side, the acid generated by the high-density plasma can be The atomic radicals can be efficiently introduced into the oxide 530 or into the insulator near the oxide 530. The microwave treatment can be carried out at a pressure of 133 Pa or more, preferably 200 Pa or more. a or more, and more preferably 400 Pa or more. The gas introduced into the device is, for example, oxygen and argon, and the oxygen flow ratio (O 2 / (O 2 +Ar)) is set to 50% or less, preferably 10% or more and 30% or less.

[0267] In addition, during the manufacturing process of the transistor 500, the surface of the oxide 530 is exposed. It is preferable to perform a heat treatment. The heat treatment is performed at a temperature of, for example, 100° C. or higher and 450° C. or lower. More preferably, the temperature is 350° C. to 400° C. The heat treatment may be performed in the presence of nitrogen gas. or inert gas atmosphere, or oxidizing gas is 10 ppm or more, 1% or more, or For example, it is preferable to carry out the heat treatment in an oxygen atmosphere. This supplies oxygen to the oxide 530, eliminating the oxygen vacancy (V O ) can be reduced. The heat treatment may be carried out under reduced pressure or under nitrogen gas or inert gas. After heat treatment in an oxidizing gas atmosphere, 10ppm of oxidizing gas was added to compensate for the oxygen that was removed. m or more, 1% or more, or 10% or more. After heat treatment in an atmosphere containing 10 ppm or more, 1% or more, or 10% or more, The heat treatment may be performed in a nitrogen gas or inert gas atmosphere.

[0268] In addition, by performing an oxygen addition process on the oxide 530, oxygen vacancies in the oxide 530 are filled by supplying oxygen. The oxygen that is absorbed repairs the molecule, or in other words, promotes the reaction "Vo+O→null" Furthermore, the supplied oxygen reacts with the hydrogen remaining in the oxide 530. The hydrogen is then H 2 O can be removed (dehydrated). This results in the formation of oxides The hydrogen remaining in 530 recombines with the oxygen vacancy and becomes V O By suppressing the formation of H This can be done.

[0269] Also, if the insulator 524 has an excess oxygen region, the insulator 522 is oxygen-resistant (e.g., It has the function of suppressing the diffusion of oxygen (element atoms, oxygen molecules, etc.) (the oxygen mentioned above is less likely to permeate). is preferred.

[0270] The insulator 522 has a function of suppressing the diffusion of oxygen and impurities, and the oxide 530 is effective. The oxygen does not diffuse to the insulator 520 side, which is preferable. This can prevent the insulator 524 and the oxide 530 from reacting with oxygen.

[0271] The insulator 522 may be, for example, aluminum oxide, hafnium oxide, or aluminum and hafnium oxide. Hafnium-containing oxides (hafnium aluminate), tantalum oxide, zirconium oxide, titanium Lead zirconate titanate (PZT), strontium titanate (SrTiO 3 ), or (B a,Sr)TiO 3 Insulators containing so-called high-k materials such as (BST) are used as single layers or As transistors become smaller and more highly integrated, Thinning of the gate insulating film may cause problems such as leakage current. By using a high-k material as an insulator that functions as a gate insulator, the transistor can be This makes it possible to reduce the gate potential during start operation.

[0272] In particular, it has the function of suppressing the diffusion of impurities and oxygen (the oxygen does not easily penetrate ) An insulator containing oxide of one or both of the insulating materials aluminum and hafnium As an insulator containing oxides of either or both of aluminum and hafnium , aluminum oxide, hafnium oxide, oxides containing aluminum and hafnium (hafnium oxide, ha ... It is preferable to use an insulator 5 made of such a material. When the transistor 22 is formed, the insulator 522 prevents oxygen from being released from the oxide 530 and prevents the transistor It functions as a layer that suppresses the intrusion of impurities such as hydrogen from the periphery of 500 into the oxide 530. .

[0273] Alternatively, for example, aluminum oxide, bismuth oxide, germanium oxide, etc. may be added to these insulators. Aluminum, niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, Zirconium oxide may be added to the insulator, or these insulators may be nitrided. Silicon oxide, silicon oxynitride, or silicon nitride may be laminated on the insulator.

[0274] In addition, the insulator 520 is preferably thermally stable. For example, silicon oxide and Silicon oxide nitride and silicon oxynitride are preferred because they are thermally stable. Combining the insulator with silicon oxide or silicon oxynitride provides thermally stable and It is possible to obtain a laminated insulator 520 with a high relative dielectric constant.

[0275] In the transistor 500 of FIG. 31A and FIG. 31B, the second layer is a three-layer laminate structure. As the gate insulating film, an insulator 520, an insulator 522, and an insulator 524 are illustrated. However, the second gate insulating film may have a single layer, two layers, or a laminated structure of four or more layers. In this case, the laminated structure is not limited to the same material, and may be a laminated structure made of different materials. That's fine too.

[0276] The transistor 500 has an oxide 530 including a channel formation region, which functions as an oxide semiconductor. It is preferable to use a metal oxide that can perform the function. For example, the oxide 530 is In-Mn-Zn. n oxides (element M is aluminum, gallium, yttrium, copper, vanadium, beryllium , boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum Tantalum, Cerium, Neodymium, Hafnium, Tantalum, Tungsten, or Magnesium In particular, the oxide 5 The In-M-Zn oxide that can be used as 30 is CAAC-OS (c-axis axial GNED Crystalline Oxide Semiconductor It is preferable to use CAC-OS (Cloud-Aligned Compositing System) It is preferable that the CAA C represents an example of a crystal structure, and CAC represents an example of a function or material configuration. The material 530 may be In-Ga oxide or In-Zn oxide.

[0277] CAC-OS is sometimes called CAC-metal oxide. Or CAC-metal oxide is a material that has the function of electrical conductivity in some parts and the function of The CA has insulating properties at certain points, and the entire material has a semiconductor function. C-OS or CAC-metal oxide is placed in the channel formation region of a transistor. In this case, the function of conductivity is the function of allowing electrons (or holes) to flow as carriers. The insulating function is the function of not allowing the electrons that act as carriers to flow. The function and the function work complementary to each other to provide a switching function (On / Off The function of providing a CAC-OS or CAC-metal oxide with a The functions of CAC-OS and CAC-metal oxide can be By separating them, the functions of both can be maximized.

[0278] In addition, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. In addition, the conductive and insulating regions in the material are formed at the nanoparticle level. In addition, the conductive and insulating regions may be separated by a metal. In addition, the conductive area may be observed as a cloud-like connected area with a blurred periphery. There may be cases where this occurs.

[0279] In addition, in the CAC-OS or CAC-metal oxide, the conductive region and the insulating region are The peripheral region is 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. The following sizes may be present in the material:

[0280] In addition, CAC-OS or CAC-metal oxide has different band gaps. For example, CAC-OS or CAC-metal oxi de is a component with a wide gap due to the insulating region and a component with a narrow gap due to the conductive region. In the case of this configuration, when a carrier flows, In the narrow gap component, carriers mainly flow. The component having a narrow gap acts complementary to the component having a wide gap. Carriers also flow to the wide gap component in conjunction with the component with a large gap. AC-OS or CAC-metal oxide is placed in the channel formation region of the transistor. When used, the transistor has a high current driving force in the on-state, i.e., a large on-current. And high field effect mobility can be obtained.

[0281] That is, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite), or metal matrix composite It can also be called a composite matrix.

[0282] Note that the metal oxide functioning as an oxide semiconductor may be a single crystal oxide semiconductor or any other non-crystalline oxide semiconductor. As a non-single-crystal oxide semiconductor, for example, CAA C-OS, polycrystalline oxide semiconductor, nc-OS (nanocrystalline oxide de semiconductor), pseudo amorphous oxide semiconductor (a-like OS: amorphous-like oxide semiconductor), and non and amorphous oxide semiconductors.

[0283] CAAC-OS has a c-axis orientation and multiple nanocrystals are connected in the ab-plane direction. The crystal structure has distortion. The distortion is caused by the area where multiple nanocrystals are connected. In the region, between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement, Indicates the point where the direction is changing.

[0284] Nanocrystals are basically hexagonal, but are not limited to regular hexagons and may be non-regular hexagons. In addition, the distortion may have a lattice arrangement such as a pentagon or a heptagon. In addition, in the CAAC-OS, clear grain boundaries (grain boundaries) are not observed even in the vicinity of the strain. It is difficult to confirm the presence of the lattice distortion. This is because the CAAC-OS is aligned in the ab-plane direction. In the case of the ferroelectric material, the arrangement of oxygen atoms is not dense, and the bond distance between atoms is reduced by the substitution of metal elements. This is because distortion can be tolerated by changing the

[0285] In addition, the CAAC-OS has a layer containing indium and oxygen (hereinafter, the In layer) and an element A layered crystal structure in which layers containing M, zinc, and oxygen (hereinafter referred to as the (M,Zn) layer) are stacked. Indium and element M tend to have a layered structure. It is possible, and when the element M in the (M,Zn) layer is replaced with indium, (In,M,Zn) Also, when the indium in the In layer is replaced with element M, (In,M ) layer.

[0286] CAAC-OS is a metal oxide with high crystallinity. On the other hand, CAAC-OS has no clear crystallinity. Since it is difficult to confirm grain boundaries, the decrease in electron mobility caused by grain boundaries is unlikely to occur. In addition, the crystallinity of metal oxides decreases due to the inclusion of impurities and the generation of defects. Therefore, CAAC-OS is a metal oxide with few impurities and defects (such as oxygen vacancies). Therefore, the physical properties of the metal oxide having the CAAC-OS are stable. Therefore, metal oxides having CAAC-OS are heat resistant and highly reliable.

[0287] The nc-OS is a nano-sized area (e.g., an area of ​​1 nm to 10 nm, especially 1 nm to 3 nm). The nc-OS has periodic atomic arrangement in the nanometer range. There is no regularity in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analysis method, nc-OS may be considered to be a-like OS or amorphous oxide semiconductor. It may be indistinguishable from the above.

[0288] In addition, In-G, a type of metal oxide containing indium, gallium, and zinc, a-Zn oxide (also called "IGZO") has a stable structure by forming it into the above-mentioned nanocrystals. In particular, IGZO tends to have difficulty growing crystals in the air, so Small crystals (e.g., In some cases, the structure may be more stable if the material is made into the nanocrystal form described above.

[0289] The a-like OS is a metal oxide semiconductor with a structure between the nc-OS and the amorphous oxide semiconductor. The a-like OS has voids or low density areas. e-OS has a lower crystallinity than nc-OS and CAAC-OS.

[0290] Oxide semiconductors (metal oxides) have a variety of structures, each with different properties. The oxide semiconductor of one embodiment of the present invention is an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-lik e OS, nc-OS, and CAAC-OS may be present in two or more types.

[0291] In addition, it is preferable to use a metal oxide having a low carrier concentration for the transistor 500. In order to reduce the carrier concentration of the metal oxide, the impurity concentration in the metal oxide is reduced. In this specification, the impurity concentration is low and the defect level density is low. A metal oxide with a low level of density is called high purity intrinsic or substantially high purity intrinsic. Impurities include, for example, hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, and nickel. , silicon, etc.

[0292] In particular, hydrogen contained in metal oxides reacts with oxygen that bonds with metal atoms to form water, Oxygen vacancies may be formed in the metal oxide. If defects are present, the transistor may have normally-on characteristics. The defect where hydrogen has entered the oxygen vacancy acts as a donor and generates electrons as carriers. In addition, some of the hydrogen atoms bond with oxygen, which bonds with metal atoms, and the carrier electrons Therefore, transistors using metal oxides containing a large amount of hydrogen The transistor tends to have normally-on characteristics.

[0293] The defect where hydrogen has entered the oxygen vacancy can function as a donor for the metal oxide. It is difficult to quantitatively evaluate the defects. Therefore, in this specification, the term "metal oxide" is used to refer to the carrier concentration rather than the concentration of the metal oxide. As a parameter of the oxide, the capacitance of the oxide in the absence of an electric field is used instead of the donor concentration. In other words, the "carrier concentration" described in this specification and the like is the "donor concentration". This can sometimes be rephrased as "concentration."

[0294] Therefore, when a metal oxide is used for the oxide 530, the hydrogen in the metal oxide is reduced as much as possible. Specifically, it is preferable that the metal oxide is analyzed by secondary ion mass spectrometry ( By SIMS (Secondary Ion Mass Spectrometry) The resulting hydrogen concentration is 1×10 20 atoms / cm 3 Less than 1 x 10 19 a toms / cm 3 less than 5×10 18 atoms / cm 3 Less than or equal to Preferably 1×10 18 atoms / cm 3 Impurities such as hydrogen are sufficiently reduced. By using this metal oxide in the channel formation region of a transistor, stable electrical characteristics can be achieved. It can be granted.

[0295] In addition, when a metal oxide is used for the oxide 530, the carrier of the metal oxide in the channel formation region is The concentration is 1×10 18 cm -3 It is preferable that the value is less than 1×10 17 cm -3 less than More preferably, it is 1×10 16 cm -3 More preferably, it is less than 1 ×10 13 cm -3 More preferably, it is less than 1×10 12 cm -3 is less than It is more preferable that the lower limit of the carrier concentration of the metal oxide in the channel formation region is There is no particular limit to the number of -9 cm -3 It can be said that:

[0296] In addition, when a metal oxide is used for the oxide 530, the conductor 542 (the conductor 542a, When the conductor 542b) comes into contact with the oxide 530, the oxygen in the oxide 530 is transferred to the conductor 54 2, and the conductor 542 may be oxidized. It is highly likely that the conductivity of the conductor 542 will decrease. The diffusion of oxygen into the oxide 530 can be expressed as the absorption of oxygen by the conductor 542. can be done.

[0297] In addition, oxygen in the oxide 530 is converted into the conductor 542 (the conductor 542a and the conductor 542b). Diffusion into the oxide 530b between the conductor 542a and the oxide 530b and between the conductor 542b and the oxide 530c. A foreign layer may be formed between the oxide 530b and the conductor 542. Since the layer contains a large amount of oxygen, it is presumed that the layer has insulating properties. The three-layer structure of the oxide 530b and the hetero layer is a three-layer structure consisting of a metal, an insulator, and a semiconductor. It can be considered as MIS (Metal-Insulator-Semiconductor) structure. In some cases, it is called a diode junction structure, or a MIS structure. do.

[0298] The different layer is not limited to being formed between the conductor 542 and the oxide 530b. For example, a foreign layer may be formed between the conductor 542 and the oxide 530c, or between the conductor 54 2 and oxide 530b, and between conductor 542 and oxide 530c. There is a match.

[0299] In addition, the metal oxide that functions as a channel formation region in the oxide 530 is a band gap metal oxide. It is preferable to use a material with a gap of 2 eV or more, preferably 2.5 eV or more. By using metal oxides with a wide band gap, the off-state current of transistors can be reduced. It is possible.

[0300] The oxide 530 has the oxide 530a under the oxide 530b, so that the oxide 530 is thicker than the oxide 530a. It is possible to suppress the diffusion of impurities from the structure formed below into the oxide 530b. In addition, by having the oxide 530c on the oxide 530b, the oxide 530c can be formed more efficiently than the oxide 530c. It is possible to suppress the diffusion of impurities from the structure formed above into the oxide 530b. .

[0301] The oxide 530 has a layered structure made of oxides having different atomic ratios of metal atoms. Specifically, in the metal oxide used for the oxide 530a, The atomic ratio of element M in the metal oxide used for oxide 530b is It is preferable that the atomic ratio of M is larger than that of M. In addition, the metal oxide used for the oxide 530a is In the metal oxide used for the oxide 530b, the atomic ratio of element M to In is It is preferable that the atomic ratio of element M to In is larger than that of element In. In the metal oxide, the atomic ratio of In to element M is In the metal oxide, the atomic ratio of In to the element M is preferably larger than that of In. The oxide 530c is a metal oxide that can be used for the oxide 530a or the oxide 530b. can be used.

[0302] In addition, the energy of the conduction band minimum of the oxide 530a and the oxide 530c is It is preferable that the energy of the oxide is higher than the conduction band minimum energy of the oxide. The electron affinity of oxide 530a and oxide 530c is smaller than the electron affinity of oxide 530b. It is preferred.

[0303] Here, at the junctions of oxide 530a, oxide 530b, and oxide 530c, The energy level of the lower band edge changes gradually. The energy level of the conduction band minimum at the junction of the oxide 530c and the oxide 530b is In order to achieve this, the oxide At the interface between oxide 530a and oxide 530b, and at the interface between oxide 530b and oxide 530c In this case, the defect level density of the mixed layer formed in the step (b) is preferably reduced.

[0304] Specifically, the oxide 530a and the oxide 530b, and the oxide 530b and the oxide 530c are oxides. By having a common element other than the element (as the main component), a mixed layer with a low defect level density is formed. For example, when the oxide 530b is an In-Ga-Zn oxide, the oxide 5 30a and oxide 530c, In-Ga-Zn oxide, Ga-Zn oxide, oxide Gallium or the like may be used.

[0305] At this time, the main path of the carriers is the oxide 530b. By configuring the oxide 530c as described above, the interface between the oxide 530a and the oxide 530b and the oxide The defect state density at the interface between the substrate 530b and the oxide 530c can be reduced. Therefore, the effect of interface scattering on carrier conduction is reduced, and the transistor 500 has a high On-current can be obtained.

[0306] On the oxide 530b, a conductor 542a is formed, which functions as a source electrode and a drain electrode. The conductor 542a and the conductor 542b are provided as follows: , aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum , tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium tungsten, beryllium, indium, ruthenium, iridium, strontium, lanthanum or an alloy containing the above-mentioned metal elements or the above-mentioned metal elements. It is preferable to use a combination of tantalum nitride, titanium nitride, tantalum nitride, etc. tantalum, nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, Ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum It is preferable to use oxides containing nickel and tantalum nitride. , nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide Ruthenium, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum and nickel Oxides containing fluorine are conductive materials that are resistant to oxidation or that maintain their conductivity even when they absorb oxygen. Furthermore, metal nitride films such as tantalum nitride are preferred because they can be easily oxidized by hydrogen or oxygen. It is preferable because it has a barrier property against elements.

[0307] In addition, although the conductor 542a and the conductor 542b are shown as having a single-layer structure in FIG. A laminated structure of two or more layers may be used. For example, a tantalum nitride film and a tungsten film may be laminated. Alternatively, a titanium film and an aluminum film may be laminated. A two-layer structure in which an aluminum film is laminated, and a copper film is laminated on a copper-magnesium-aluminum alloy film. Two-layer structure with copper film laminated on titanium film, two-layer structure with copper film laminated on tungsten film A two-layer structure may be used.

[0308] In addition, a titanium film or a titanium nitride film and an aluminum film over the titanium film or the titanium nitride film are A titanium film or a copper film is laminated, and a titanium film or a titanium nitride film is further formed on the aluminum film or a copper film. Three-layer structure, a molybdenum film or molybdenum nitride film, and a molybdenum film or molybdenum nitride film. An aluminum film or copper film is laminated on top of the tantalum film, and a molybdenum film or The molybdenum nitride film is a three-layer structure. A transparent conductive material containing zinc oxide may also be used.

[0309] As shown in FIG. 31A, the oxide 530 and the conductor 542a (conductor 542b) At the interface and in its vicinity, a region 543a and a region 543b are formed as low resistance regions. In this case, the region 543a functions as either a source region or a drain region. The region 543b functions as the other of the source region and the drain region. A channel forming region is formed in a region between 543a and region 543b.

[0310] By providing the conductor 542a (conductor 542b) so as to be in contact with the oxide 530, The oxygen concentration in the region 543a (region 543b) may decrease. The metal contained in the conductor 542a (conductor 542b) and the oxide 530 are mixed in the region 543b. In such a case, a metal compound layer containing the metal component may be formed in the region 543a (region The carrier density in the region 543a (region 543b) increases, and the region 543a (region 543b) becomes a low resistance region. do.

[0311] The insulator 544 is provided to cover the conductor 542a and the conductor 542b. The insulator 544 prevents oxidation of the oxide 542a and the conductor 542b. 530 and may be provided in contact with the insulator 524.

[0312] Insulator 544: hafnium, aluminum, gallium, yttrium, zirconium Aluminum, tungsten, titanium, tantalum, nickel, germanium, neodymium, lanthanum, or magnesium, etc., or a metal oxide containing two or more kinds of metals. The insulator 544 may be made of silicon oxynitride or silicon nitride. can also be used.

[0313] In particular, the insulator 544 may be an oxide of aluminum or hafnium or both. Aluminum oxide, hafnium oxide, aluminum, and hafnium oxide are insulators containing It is preferable to use oxides containing hafnium (e.g., hafnium aluminate). Hafnium aluminate has higher heat resistance than hafnium oxide. In the heat treatment, the conductor 542a and the conductor 542b is a material that is resistant to oxidation or whose electrical conductivity does not decrease significantly even when it absorbs oxygen. In this case, the insulator 544 is not an essential component. Just do that.

[0314] By providing the insulator 544, impurities such as water and hydrogen contained in the insulator 580 are converted into oxygen. The oxide 530c is prevented from diffusing into the oxide 530b through the insulator 550. In addition, the excess oxygen contained in the insulator 580 can suppress the oxidation of the conductor 560. It is possible.

[0315] The insulator 550 functions as a first gate insulating film. It is preferable that the insulator 550 is disposed in contact with the inner surface (upper surface and side surface) of the Similar to the insulator 524, an insulator that contains excess oxygen and releases oxygen when heated is used. It is preferable to form it using

[0316] Specifically, silicon oxide having excess oxygen, silicon oxynitride, silicon nitride oxide, and nitrogen silicon oxide doped with fluorine, silicon oxide doped with carbon, carbon, and Silicon oxide doped with nitrogen and silicon oxide having vacancies can be used. Silicon oxide and silicon oxynitride are preferred because they are stable to heat.

[0317] An insulator that releases oxygen when heated is used as the insulator 550 and is attached to the top surface of the oxide 530c. By providing the oxide 530b in the insulating layer 550, the oxide 530c passes through the oxide 530b. It is possible to effectively supply oxygen to the channel formation region. In this case, it is preferable that the concentration of impurities such as water or hydrogen in the insulator 550 is reduced. The thickness of the edge 550 is preferably 1 nm or more and 20 nm or less.

[0318] In addition, in order to efficiently supply excess oxygen contained in the insulator 550 to the oxide 530, A metal oxide may be provided between the body 550 and the conductor 560. The metal oxide may be an insulator. It is preferable to suppress the diffusion of oxygen from the conductive material 550 to the conductive material 560. The metal oxide prevents excess oxygen from diffusing from the insulator 550 to the conductor 560. In other words, the reduction in the amount of excess oxygen supplied to the oxide 530 can be suppressed. In this case, the oxidation of the conductor 560 due to excess oxygen can be suppressed. Any material that can be used for the insulator 544 may be used.

[0319] Note that the insulator 550 may have a stacked structure similar to the second gate insulating film. As the miniaturization and high integration of devices progresses, the gate insulating film becomes thinner, which leads to problems such as leakage current. Therefore, the insulator that functions as the gate insulating film is made of high-k material. By using a laminated structure of a material that is thermally stable and a material that is not thermally stable, the thickness of the material is maintained while the It is possible to reduce the gate potential during transistor operation. In addition, it is thermally stable and has a high relative dielectric constant. It may be a laminated structure.

[0320] The conductor 560 functioning as the first gate electrode has a two-layer structure in FIGS. 31A and 31B. However, it may have a single layer structure or a laminated structure of three or more layers.

[0321] The conductor 560a is a hydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, a nitrogen oxide molecule ( N 2 O, NO, NO 2 ), conductive material that suppresses the diffusion of impurities such as copper atoms It is preferable to use a material that is low in oxygen (e.g., oxygen atoms, oxygen molecules, etc.). It is preferable to use a conductive material having a function of suppressing the diffusion of the conductive material 56. Since 0a has the function of suppressing oxygen diffusion, the oxygen contained in the insulator 550 Therefore, it is possible to prevent the conductor 560b from being oxidized and the conductivity from decreasing. Examples of conductive materials that have the function of suppressing the above include tantalum, tantalum nitride, and ruthenium. It is preferable to use ruthenium or ruthenium oxide as the conductor 560a. In this case, an oxide semiconductor that can be used for the oxide 530 can be used. By forming a film of 0b by a sputtering method, the electrical resistance value of the conductor 560a is reduced, and the conductor This is called an OC (Oxide Conductor) electrode. This can be done.

[0322] The conductor 560b is a conductive material mainly composed of tungsten, copper, or aluminum. In addition, since the conductor 560b also functions as wiring, It is preferable to use a highly conductive material, such as tungsten, copper, or aluminum. The conductive material 560b may be a material having a laminated structure. For example, it may be a laminated structure of titanium or titanium nitride and the above conductive material. stomach.

[0323] The insulator 580 is provided on the conductor 542a and the conductor 542b via the insulator 544. Insulator 580 preferably has an excess oxygen region. For example, insulator 58 0, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, fluorine Silicon oxide doped with fluorine, silicon oxide doped with carbon, and oxide doped with carbon and nitrogen. It is particularly preferable that the insulating layer 100 has a silicon oxide having voids, a silicon oxide having voids, or a resin. Silicon oxide and silicon oxynitride are preferred because they are thermally stable. Silicon oxide and silicon oxide with vacancies easily form excess oxygen regions in later processes. This is preferable because it is possible to

[0324] The insulator 580 preferably has an excess oxygen region. By providing the insulator 580 in contact with the oxide 530c, the oxygen in the insulator 580 is converted into the oxide The insulator 58 can be efficiently supplied to the oxide 530 through the insulator 530c. It is preferable that the concentration of impurities such as water or hydrogen in the hydrogen peroxide be reduced.

[0325] The opening of the insulator 580 is formed to overlap the region between the conductor 542a and the conductor 542b. As a result, the conductor 560 is in contact with the opening of the insulator 580 and the conductor 542a and the conductor 542b. It is formed so as to be embedded in the region sandwiched between 542b.

[0326] In miniaturizing semiconductor devices, it is necessary to shorten the gate length. It is necessary to prevent the conductivity of conductor 560 from decreasing. As a result, the conductor 560 can have a shape with a high aspect ratio. In order to embed the conductor 560 in the opening of the insulator 580, the conductor 560 is formed to have an aspect ratio Even if the conductor 560 has a high shape, it can be formed without collapsing during the process. do.

[0327] The insulator 574 is connected to the top surface of the insulator 580, the top surface of the conductor 560, and the top surface of the insulator 550. The insulator 574 is preferably provided in contact with the insulating film 574 by sputtering. , insulator 550, and insulator 580 may be provided with excess oxygen regions. From this excess oxygen region, oxygen can be provided into the oxide 530.

[0328] For example, the insulator 574 may be hafnium, aluminum, gallium, yttrium, di Zr, tungsten, titanium, tantalum, nickel, germanium, or magnesium One or more metal oxides selected from the group consisting of tungsten, tungsten, and tungsten can be used. do.

[0329] In particular, aluminum oxide has a high barrier property and is a thin film of 0.5 nm to 3.0 nm. Therefore, the diffusion of hydrogen and nitrogen can be suppressed even if the sputtering method is used. The aluminum oxide film formed by this method is a source of oxygen and also acts as a barrier against impurities such as hydrogen. It can also function as a membrane.

[0330] In addition, it is preferable to provide an insulator 581 functioning as an interlayer film over the insulator 574. The insulator 581, like the insulator 524, has a low impurity concentration, such as water or hydrogen, in the film. It is preferable that the amount of the ion exchange rate is reduced.

[0331] Also, the openings formed in the insulators 581, 574, 580, and 544 Conductor 540a and conductor 540b are placed in the mouth. The conductor 540a and the conductor 540b are disposed opposite each other with the conductor 560 in between. The conductor b has the same configuration as the conductor 546 and the conductor 548 described below.

[0332] An insulator 582 is provided on the insulator 581. The insulator 582 is resistant to oxygen and hydrogen. It is preferable to use a material having a barrier property for the insulator 582. The insulator 582 may be made of a material similar to that of the insulator 514. For example, the insulator 582 may be made of aluminum oxide. It is preferable to use metal oxides such as tungsten oxide, hafnium oxide, and tantalum oxide.

[0333] In particular, aluminum oxide is highly resistant to oxygen and hydrogen, which can cause fluctuations in the electrical characteristics of transistors. The membrane has a high blocking effect, preventing both impurities such as oxygen and water from penetrating the membrane. Aluminum oxide is highly resistant to hydrogen, moisture, and other elements during and after the transistor manufacturing process. It is possible to prevent impurities from being mixed into the transistor 500. This can suppress the release of oxygen from the oxide that constitutes the transistor. Suitable for use as a protective film for 500.

[0334] Further, an insulator 586 is provided on the insulator 582. The insulator 586 is The same materials as those in 20 can be used. In addition, these insulators have a relatively low dielectric constant. By applying the material, it is possible to reduce the parasitic capacitance between wiring. For example, The body 586 may be a silicon oxide film, a silicon oxynitride film, or the like.

[0335] Also, the insulator 520, the insulator 522, the insulator 524, the insulator 544, the insulator 580, the insulator The body 574, the insulator 581, the insulator 582, and the insulator 586 are provided with the conductor 546, and and a conductor 548, etc. are embedded.

[0336] The conductor 546 and the conductor 548 are connected to the capacitor 600, the transistor 500, or the The conductor 546 has a function as a plug or wiring for connecting to the resistor 400. The conductor 548 may be provided using the same material as the conductor 328 and the conductor 330. can be done.

[0337] After the transistor 500 is formed, an opening is formed to surround the transistor 500. An insulator having high barrier properties against hydrogen or water may be formed so as to cover the opening. By encasing the transistor 500 in the insulator with high barrier properties as described above, moisture, It is possible to prevent the intrusion of hydrogen and the like. Alternatively, the transistor may be wrapped in an insulator that has high barrier properties against hydrogen or water. When forming an opening to surround the transistor 500, for example, the insulator 522 or the insulator 5 14, and the burr 522 or 514 is placed in contact with the burr 522 or 514. If a highly insulating material is formed, the manufacturing process of the transistor 500 can be performed as a part of the manufacturing process. Examples of insulators with high barrier properties against hydrogen or water include A material similar to that of the insulator 522 or the insulator 514 may be used.

[0338] Next, a capacitor 600 is provided above the transistor 500. The capacitor 600 has It has a conductor 610, a conductor 620, and an insulator 630.

[0339] A conductor 612 may be provided over the conductor 546 and the conductor 548. Reference numeral 12 serves as a plug or wiring for connection to the transistor 500. The conductor 610 functions as an electrode of the capacitor 600. The body 610 can be formed simultaneously.

[0340] The conductor 612 and the conductor 610 may be made of molybdenum, titanium, tantalum, or tungsten. a metal film containing an element selected from aluminum, copper, chromium, neodymium, and scandium; Or a metal nitride film containing the above-mentioned elements (tantalum nitride film, titanium nitride film, molybdenum nitride film, etc.) Indium tin oxide (ITO) or tungsten nitride (Tungsten nitride) can be used. tungsten oxide-containing indium oxide; tungsten oxide-containing indium zinc oxide oxide, indium oxide with titanium oxide, indium tin oxide with titanium oxide, Conductive materials such as indium zinc oxide and indium tin oxide with added silicon oxide are used. It is also possible.

[0341] In this embodiment, the conductor 612 and the conductor 610 are shown as having a single-layer structure. For example, a conductive material having a barrier property and a conductive material having a conductive property may be used. Conductors with barrier properties are placed between conductors with high electrical conductivity and conductors with high electrical conductivity are placed close to each other. A highly adhesive conductor may be formed.

[0342] The conductor 620 is provided so as to overlap with the conductor 610 with the insulator 630 interposed therebetween. The conductor 620 is made of a conductive material such as a metal material, an alloy material, or a metal oxide material. High-melting-point materials such as tungsten and molybdenum, which have both heat resistance and electrical conductivity, are used. It is preferable to use tungsten, and it is particularly preferable to use tungsten. When forming the structure at the same time as other structures, low resistance metal materials such as Cu (copper) and Al (aluminum) are used. It is advisable to use a

[0343] An insulator 640 is provided on the conductor 620 and the insulator 630. The insulator 640 can be provided using a material similar to that of the insulator 320. It may also function as a planarizing film that covers the uneven shape underneath.

[0344] By using this structure, a semiconductor device using a transistor having an oxide semiconductor Therefore, miniaturization or high integration can be achieved.

[0345] Examples of a substrate that can be used for a semiconductor device according to one embodiment of the present invention include a glass substrate and a quartz substrate. , sapphire substrate, ceramic substrate, metal substrate (e.g. stainless steel substrate, steel Substrate with tungsten foil, tungsten substrate, tungsten foil semiconductor substrate (e.g., a single crystal semiconductor substrate, a polycrystalline semiconductor substrate, or a compound semiconductor substrate, Semiconductor substrates, etc.) SOI (SOI: Silicon on Insulator) substrates In addition, a material having heat resistance capable of withstanding the processing temperature of this embodiment can be used. A plastic substrate may also be used. An example of a glass substrate is barium borosilicate glass. Glass, aluminosilicate glass, aluminoborosilicate glass, or soda lime Glass, etc. In addition, crystallized glass, etc. can also be used.

[0346] Alternatively, the substrate may be a flexible substrate, a laminated film, a paper containing a fibrous material, or A flexible substrate, a laminate film, a base film, etc. can be used. Examples of such materials include polyethylene terephthalate. (PET), polyethylene naphthalate (PEN), polyethersulfone (PES) , and plastics such as polytetrafluoroethylene (PTFE). An example of the material is a synthetic resin such as acrylic. Another example is polypropylene. Examples include polyvinyl chloride, polyester, polyvinyl fluoride, and polyvinyl chloride. Examples include polyamide, polyimide, aramid, epoxy, inorganic vapor deposition film, and paper. In particular, transistors are manufactured using semiconductor substrates, single crystal substrates, or SOI substrates. By manufacturing the insulators, there is little variation in characteristics, size, or shape, and the current It is possible to manufacture transistors with high capacity and small size. By configuring a circuit using a stator, it is possible to reduce the power consumption of the circuit or to increase the circuit integration density. can be done.

[0347] In addition, a flexible substrate is used as the substrate, and transistors, resistors, and Alternatively, a substrate and a transistor, a resistor, and / or a capacitor may be formed. Alternatively, a release layer may be provided between the capacitors and the like. After the entire process is completed, it can be separated from the substrate and used for transfer to another substrate. In this case, transistors, resistors, and / or capacitors are mounted on substrates with poor heat resistance or flexible substrates. The above-mentioned peeling layer may be formed of, for example, a tungsten film and a silicon oxide film. A laminated structure of a film and an inorganic film, or a structure in which an organic resin film such as polyimide is formed on a substrate Alternatively, a silicon film containing hydrogen or the like can be used.

[0348] In other words, even if a semiconductor device is formed on a substrate and then transferred to another substrate, As an example of a substrate to which a semiconductor device is transferred, a substrate on which the above-mentioned transistor is formed may be used. In addition to the substrates that can be used, paper substrates, cellophane substrates, aramid film substrates, polyimide substrates, Film substrate, stone substrate, wood substrate, cloth substrate (natural fibers (silk, cotton, hemp), synthetic fibers (nylon , polyurethane, polyester) or regenerated fiber (acetate, cupra, rayon , recycled polyester), leather substrates, or rubber substrates. By using the plate, it is possible to manufacture a semiconductor device that is flexible and does not easily break. It is possible to impart heat resistance, reduce weight, or reduce thickness.

[0349] By providing a semiconductor device on a flexible substrate, for example, the secondary battery 300 can be formed into a curved shape. Even if the secondary battery has a bent shape, the semiconductor device can be provided along the outer shape of the secondary battery. For example, when the secondary battery 300 has a cylindrical shape, a semi-conductor may be provided on the side of the secondary battery. The conductor arrangement may be provided in a winding manner.

[0350] <Transistor modification 1> The transistor 500A shown in FIGS. 32A and 32B is the same as the transistor shown in FIGS. 31A and 31B. FIG. 32A shows a modified example of the transistor 500A in the channel length direction. 32A is a cross-sectional view of the transistor 500A, and FIG. 32B is a cross-sectional view of the transistor 500A in the channel width direction. The configurations illustrated in FIGS. 32A and 32B are semiconductor devices according to one embodiment of the present invention, such as a transistor 400. The present invention can also be applied to other transistors included in the device.

[0351] The transistor 500A having the configuration shown in FIG. 32A and FIG. 32B includes an insulator 552, an insulator 402, and an insulator 404, and the oxide 530c is a product of the oxide 530c1 and the oxide 530c2. The transistor 500 shown in FIG. 31A and FIG. 31B is different in that it is configured with layers. An insulator 552 is provided in contact with the side surface of the conductor 540a, and an insulator 552 is provided in contact with the side surface of the conductor 540b. The insulator 552 is provided in contact with the transistor shown in FIG. 31A and FIG. 31B. 500. Furthermore, the absence of the insulator 520 is different from the configurations shown in FIGS. 31A and 31B. This is different from transistor 500.

[0352] The transistor 500A having the configuration shown in FIG. 32A and FIG. 32B has an insulator 40 on an insulator 512. 2 is provided. In addition, an insulator 404 is provided on the insulator 574 and on the insulator 402. can be.

[0353] In the transistor 500A having the configuration shown in FIG. 32A and FIG. 32B, the insulator 514, the insulator 51 6, insulator 522, insulator 524, insulator 544, insulator 580, and insulator 574 The insulating material 404 covers the patterned structure. The body 404 is connected to the top surface of the insulator 574, the side surface of the insulator 574, the side surface of the insulator 580, the insulator 5 44 side, insulator 524 side, insulator 522 side, insulator 516 side, insulator 5 14 and the top surface of the insulator 402. As a result, the oxide 530 and the like are in contact with the insulating It is isolated from the outside by an edge 404 and an insulator 402 .

[0354] The insulators 402 and 404 are made of at least hydrogen (e.g., hydrogen atoms, hydrogen molecules, etc.). For example, the insulator 402 has a high function of suppressing the diffusion of water molecules. The insulator 404 is made of a material having a high hydrogen barrier property, such as silicon nitride or oxynitride. It is preferable to use silicon oxide. This prevents hydrogen and the like from diffusing into the oxide 530. Therefore, the deterioration of the characteristics of the transistor 500A can be suppressed. The reliability of the semiconductor device according to one embodiment of the present invention can be improved.

[0355] The insulator 552 includes the insulator 581, the insulator 404, the insulator 574, the insulator 580, and the insulator 404. The insulator 552 is provided in contact with the insulator 544. The insulator 552 has a function of suppressing the diffusion of hydrogen or water molecules. For example, the insulator 552 is preferably made of a material having a high hydrogen barrier property. Insulators such as silicon nitride, aluminum oxide, or silicon oxynitride may be used. In particular, silicon nitride is a material with high hydrogen barrier properties, so that the insulator 552 It is preferable to use a material with high hydrogen barrier properties as the insulator 552. As a result, impurities such as water or hydrogen are transported from the insulator 580 to the conductor 540a and the conductor 540b. 0b, the diffusion of the oxide 530 into the insulator 580 can be suppressed. The oxygen contained in the conductive material 540 is prevented from being absorbed by the conductive material 540a and the conductive material 540b. As described above, the reliability of the semiconductor device of one embodiment of the present invention can be improved.

[0356] The oxide 530c1 is formed on the top surface of the insulator 524, the side surface of the oxide 530a, and the top surface of the oxide 530b. the surface and side, the side of the conductor 542a and the conductor 542b, the side of the insulator 544, and The oxide 530c2 contacts the side of the insulator 550 (see FIG. 32B). come into contact with.

[0357] The oxide 530c1 may be, for example, an In-Zn oxide. The material 530c2 is a material used for the oxide 530c when the oxide 530c has a single layer structure. For example, the oxide 530c2 may be made of In:Ga :Zn=1:3:4 [atomic ratio], Ga:Zn=2:1 [atomic ratio], or Ga:Zn Metal oxides with an atomic ratio of 2:5 can be used.

[0358] By forming the oxide 530c into a two-layer structure of the oxide 530c1 and the oxide 530c2, In this case, the on-state current of the transistor can be increased more than when the oxide 530c has a single-layer structure. Therefore, the transistor can be, for example, a power MOS transistor.

[0359] <Transistor modification 2> A structural example of a transistor 500B will be described with reference to FIGS. 33A, 33B, and 33C. FIG. 33A is a top view of transistor 500B. FIG. 33B is a top view of transistor 500B shown in FIG. FIG 33C is a cross-sectional view of the L1-L2 region shown in FIG 33A. In addition, in the top view of FIG. 33A, the markings of some elements are omitted for clarity. The information has been omitted.

[0360] Transistor 500B is a variation of transistor 500. Therefore, to avoid repetition, we will mainly focus on transistors. We will explain the differences from the 500.

[0361] The conductor 560 functioning as the first gate electrode includes the conductor 560a and the conductor 560 The conductor 560a is a hydrogen atom, a hydrogen molecule, a water molecule, a copper atom, It is preferable to use a conductive material that has a function of suppressing the diffusion of impurities such as electrons. has a function of suppressing the diffusion of oxygen (e.g., at least one of oxygen atoms, oxygen molecules, etc.). It is preferable to use a conductive material that has a high conductivity.

[0362] Since the conductor 560a has a function of suppressing the diffusion of oxygen, the material selection of the conductor 560b is In other words, by having the conductor 560a, the conductor 560b can be Therefore, the oxidation of the electrode is suppressed, and the decrease in electrical conductivity can be prevented.

[0363] In addition, the top and side surfaces of the conductor 560, the side surface of the insulator 550, and the side surface of the oxide 530c It is preferable to provide an insulator 544 so as to cover the surface. It is recommended to use an insulating material that has the function of suppressing the diffusion of impurities such as hydrogen and oxygen. For example, it is preferable to use aluminum oxide or hafnium oxide. Other examples include magnesium oxide, gallium oxide, germanium oxide, yttrium oxide, etc. Metal oxides such as tungsten oxide, zirconium oxide, lanthanum oxide, neodymium oxide, or tantalum oxide Silicon oxide, silicon nitride, silicon oxide or silicon nitride can be used.

[0364] By providing the insulator 544, oxidation of the conductor 560 can be suppressed. By providing the insulator 544, impurities such as water and hydrogen contained in the insulator 580 can be prevented from being generated in the transistor. Therefore, diffusion to the star 500B can be suppressed.

[0365] The transistor 500B is connected to a conductor 560 via a portion of the conductor 542a and a portion of the conductor 542b. Since the parasitic capacitance of the transistor 500 is larger than that of the transistor 500, the parasitic capacitance of the transistor 500 is larger than that of the transistor 500. The operating frequency tends to be lower than that of the insulator 500. Since there is no need to provide an opening in the substrate and fill the conductive material 560 or the insulator 550, the Higher productivity compared to the Transistor 500.

[0366] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is possible.

[0367] (Embodiment 6) In this embodiment, examples of the structure of a battery that can be used for the secondary battery 300 will be described with reference to the drawings. In this embodiment, an example of a lithium ion secondary battery is shown. The battery that can be used for the power supply 0 is not limited to a lithium ion secondary battery.

[0368] [Cylindrical secondary battery] Fig. 34A is an external view of a cylindrical secondary battery 715. Fig. 34B is an external view of a cylindrical secondary battery The inside of the hollow cylindrical battery can 702 is provided with a strip-shaped A battery element is provided in which a positive electrode 704 and a negative electrode 706 are wound with a separator 705 sandwiched therebetween. Although not shown, the battery element is wound around a center pin. The battery can 702 is made of a material that is resistant to corrosion by the electrolyte. Nickel, aluminum, titanium and other metals with high molecular weight, or alloys of these and other metals In addition, alloys with metals (e.g., stainless steel, etc.) can be used. To prevent this, it is preferable to coat the battery can 702 with nickel, aluminum, or the like. In the battery element, a positive electrode, a negative electrode, and a separator are wound, and a pair of opposing insulating plates are 708 and an insulating plate 709. The inside of the battery is filled with a non-aqueous electrolyte (not shown). LiCoO 2 ) and lithium iron phosphate (LiFePO 4 The positive electrode contains active materials such as lithium The negative electrode is made of a carbon material such as graphite that can absorb and release ion, and the negative electrode is made of ethylene carbonate. LiBF 4 or LiPF 6 Lithium salts such as The electrolyte is a non-aqueous electrolyte solution having an electrolyte such as the above dissolved therein.

[0369] The positive and negative electrodes used in cylindrical secondary batteries are wound, so active material is formed on both sides of the current collector. A positive electrode terminal (positive electrode current collecting lead) 703 is connected to the positive electrode 704, and a negative A negative electrode terminal (negative electrode current collecting lead) 707 is connected to the positive electrode 703. The positive terminal 707 can be made of a metal material such as aluminum. 03 is resistance welded to the safety valve mechanism 712, and the negative terminal 707 is resistance welded to the bottom of the battery can 702. The safety valve mechanism 712 is a PTC (Positive Temperature Coefficient) The positive electrode cap 701 is electrically connected to the positive electrode cap 701 via a capacitance 711. The safety valve mechanism 712 is a mechanism for releasing the positive electrode cap 701 when the internal pressure of the battery increases beyond a predetermined threshold. The PTC element 711 cuts off the electrical connection between the positive electrode 704 and the positive electrode 704. It is a thermal resistor whose resistance increases when the temperature rises. The increase in resistance limits the amount of current flowing. It prevents heat generation. The PTC element is made of barium titanate (BaTiO 3 )-based semiconductor For example, ceramics or the like can be used.

[0370] A lithium ion secondary battery using an electrolyte includes a positive electrode, a negative electrode, a separator, an electrolyte, and In lithium-ion secondary batteries, the anode (positive electrode) is charged and discharged. The cathode (negative electrode) is switched, and the oxidation reaction and reduction reaction are switched, An electrode with a high reaction potential is called a positive electrode, and an electrode with a low reaction potential is called a negative electrode. In the specification, even if a reverse bias current is applied during charging or discharging, Even when a charging current is applied, the positive pole is called the "positive pole" or "+ pole (plus pole)". The negative electrode is called the "negative electrode" or "-electrode (minus electrode)". The terms anode and cathode, which are related to the reaction, are used to distinguish between charging and discharging. When the current is applied, the anode is turned on, which can cause confusion. The terms cathode and cathode are not used in this specification. When using the terms anode and cathode, specify whether they are being used during charging or discharging. In addition, it is also necessary to indicate whether it corresponds to a positive electrode (plus electrode) or a negative electrode (minus electrode). do.

[0371] In this embodiment, an example of a lithium ion secondary battery is shown, but the present invention is not limited to the lithium ion secondary battery. For example, a material having element A, element X, and oxygen may be used as a positive electrode material for a secondary battery. The element A is at least one selected from the group 1 elements and the group 2 elements. As the element of Group 1, for example, lithium, sodium, potassium, etc. The elements of Group 2 include, for example, calcium, beryllium, and potassium. The element X may be, for example, a metal element, silicon, magnesium, etc. and phosphorus. The element X can be cobalt, nickel, or the like. It is preferable that the metal is at least one selected from the group consisting of manganese, iron, and vanadium. , lithium cobalt oxide (LiCoO 2 ) and lithium iron phosphate (LiFePO 4 ) are mentioned.

[0372] The negative electrode has a negative electrode active material layer and a negative electrode current collector. The negative electrode active material layer contains a conductive assistant and and a binder.

[0373] As a negative electrode active material, it is possible to carry out charge / discharge reactions by alloying / de-alloying reactions with lithium. For example, silicon, tin, gallium, aluminum, and Rumanium, lead, antimony, bismuth, silver, zinc, cadmium, indium, etc. Materials containing at least one of these elements can be used. These elements have a large capacity compared to carbon. Silicon in particular has a high theoretical capacity of 4700mAh / g.

[0374] In addition, the secondary battery preferably has a separator. Examples of the separator include Cellulose-containing fibers, including paper, nonwoven fabrics, glass fibers, ceramics, or Nylon (polyamide), Vinylon (polyvinyl alcohol fiber), polyester, a Use synthetic fibers such as acrylic, polyolefin, and polyurethane. This can be done.

[0375] In FIG. 34C, a charge control circuit 724 formed or fixed on a flexible substrate 720 is The charging control circuit 724 is shown to be provided along the side of the battery 715. The semiconductor device 200 or the like described in the above embodiment can be used. 4 on a flexible substrate 720, charging can be performed along the curved surface of the cylindrical secondary battery 715. A control circuit 724 can be provided. Therefore, the space occupied by the charge control circuit 724 can be reduced. Therefore, electronic devices including the secondary battery 715 and the charge control circuit 724 can be What kind of miniaturization can be achieved?

[0376] [Flat-shaped secondary battery] FIG. 35A is a diagram showing the appearance of a battery pack 901 including a flat secondary battery 913. FIG. The secondary battery 913 shown in FIG. 35A is configured as follows, together with a charging control circuit 914 and a connection terminal 911: It functions as a battery pack 901. FIG. 35B shows a secondary battery 913 and a charge control circuit 914. The separated state is shown.

[0377] The charge control circuit 914 is formed on or fixed to the flexible substrate 910. The semiconductor device 200 shown in the above embodiment can be used as the charger 914. The control circuit 914 may have a function for detecting abnormalities such as micro-short circuits.

[0378] The secondary battery 913 has a terminal 951 and a terminal 952. The charging control circuit 914 is 51 and a terminal 952. The connection terminal 911 is electrically connected to the charge control circuit 914. The connection terminal 911 is electrically connected to the terminal 951 and the terminal 952 via the Each of the plurality of connection terminals 911 is used as a control signal input terminal, a power supply terminal, etc. Good too.

[0379] The battery pack 901 has an insulating sheet 916 between the charge control circuit 914 and the secondary battery 913. The insulating sheet 916 is, for example, an insulating material for insulating a portion of the secondary battery 913 and the charge control circuit 914. The insulating sheet 916 has a function of preventing unwanted electrical contact. Film or adhesive sheet can be used.

[0380] As shown in FIG. 35C, the battery pack 901 is provided with an antenna 917 and a receiving circuit 918. The secondary battery 913 can also be charged in a non-contact manner using an antenna. The antenna is not limited to a coil shape, but may be, for example, a wire shape or a plate shape. antenna, aperture antenna, traveling wave antenna, EH antenna, magnetic field antenna, dielectric antenna The antenna may have a function of performing data communication with an external device, for example. The data communication method between the battery pack and other devices is NFC. The response method to be used can be used.

[0381] Next, an example of the internal structure of the secondary battery 913 will be described.

[0382] The structure of the wound body 950 disposed inside the secondary battery 913 is shown in FIG. The winding body 950 includes a negative electrode 931, a positive electrode 932, and a separator 933. The negative electrode 931 and the positive electrode 932 are stacked on top of each other with a plate 933 between them. The negative electrode 931, the positive electrode 932, and the separator 933 are wound together. The laminate of the above may be further laminated multiple times.

[0383] The negative electrode 931 is connected to the connection terminal 9 shown in FIG. 35A via either the terminal 951 or the terminal 952. 11. The positive electrode 932 is connected to the positive terminal 951 or the positive terminal 952 via the other of the terminals 951 and 952 shown in FIG. 9. The input terminal 911 is connected to the input terminal 911 shown in FIG.

[0384] In FIG. 36B, secondary battery 913 is disposed inside housing 930 (also called "exterior body"). The winding body 950 is provided with a terminal 951 and a terminal 952. The inside of the terminal 952 is impregnated with the electrolyte. The terminal 951 is in contact with the housing 930. In FIG. 36B, the housing 930 is not in contact with the housing 930. Although the winding body 950 is shown separately, in reality, the winding body 950 is covered with the housing 930, and the terminals 951 and The terminals 952 extend outside the housing 930. The housing 930 is made of a metal material (e.g., aluminum). Aluminum or resin materials can be used.

[0385] The housing 930 can be made of an insulating material such as a metal material or an organic resin. 30 may be made of a film, in which case the film may be provided with a flexible substrate. In some cases, a charging control circuit is provided.

[0386] In FIG. 35A, an insulating sheet 916 is provided on the surface of the housing, and the surface on which the charging control circuit is provided is In this example, the flexible substrate is fixed on the inside, and a charging control circuit is formed. The terminals 951 and 952 may be connected with the other side facing outward. This exposes the connectors and may cause electrostatic damage or short circuits. This will be the case.

[0387] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is possible.

[0388] (Embodiment 7) In this embodiment, an electronic device to which a semiconductor device according to one embodiment of the present invention can be applied will be described. do.

[0389] The semiconductor device according to one embodiment of the present invention can be incorporated in various electronic devices. Examples of the device include television sets, desktop or notebook personal computers, etc. Computers, computer monitors, digital signage Signage: Electronic signage, large game machines such as pachinko machines, etc. In addition to the electronic devices provided, digital cameras, digital video cameras, digital photo frames , mobile phones, portable game machines, portable information terminals, audio playback devices, etc. Mobile objects such as automobiles, motorcycles, ships, and aircraft can also be considered electronic devices. The semiconductor device according to the present invention is used for a charge / discharge control device for a battery built into the electronic device. It can be used.

[0390] The electronic device may have an antenna. When the antenna receives a signal, the electronic device displays the signal on the display unit. It can display images and information. In addition, electronic devices have antennas and secondary batteries. In that case, the antenna may be used for contactless power transfer.

[0391] Electronic devices include sensors (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, Magnetic, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity The device may have a built-in sensor (including the ability to measure angle, gradient, vibration, odor, or infrared light).

[0392] Electronic devices can have various functions. For example, they can store various information (still images, videos, text, etc.). Functions for displaying text images, etc. on the display, touch panel functions, calendar, date, or Functions for displaying time, etc., function for executing various software (programs), wireless communication The function of reading out programs or data recorded on a recording medium, etc. can be done.

[0393] Examples of electronic devices including a semiconductor device according to one embodiment of the present invention will be described with reference to FIG. conduct.

[0394] The robot 7100 is equipped with a light sensor, a microphone, a camera, a speaker, a display, Various sensors (infrared sensors, ultrasonic sensors, acceleration sensors, piezo sensors, optical sensors, The device is equipped with a gyro sensor, a movement mechanism, etc.

[0395] The microphone has a function of detecting acoustic signals such as the user's voice and environmental sounds. The speaker also has a function of emitting audio signals such as voice and warning sounds. The 7100 analyzes the audio signal input through the microphone and outputs the necessary audio. The robot 7100 can emit audio signals from a speaker. and a speaker for communication with the user.

[0396] The camera has a function of capturing images of the surroundings of the robot 7100. The robot 7100 has a function of moving using a moving mechanism. It is possible to capture images and analyze them to detect the presence or absence of obstacles when moving around. The semiconductor device according to one embodiment of the present invention can be used for a secondary battery (battery) of the robot 7100. This makes it possible to detect overcurrent during charging or discharging. This can improve the reliability and safety of 00.

[0397] The flying object 7120 has a propeller, a camera, a battery, a storage device, a computing device, etc. , and has the ability to fly autonomously.

[0398] For example, image data captured by a camera is stored in a storage device. It can analyze image data and detect the presence or absence of obstacles when moving. The device can estimate the remaining battery power from the change in the battery's storage capacity. By using a semiconductor device according to one embodiment of the present invention for the battery of the row body 7120, It is possible to detect overcurrent during discharge or discharge operation. This can improve safety.

[0399] The cleaning robot 7140 has a display on the top surface and multiple cameras on the sides. The robot has a brush, a control button, various sensors, etc. The cleaning robot 7140 is equipped with tires, a suction port, etc. It can detect dust and suck it up through a suction port provided on the bottom surface.

[0400] For example, the cleaning robot 7140 analyzes the image captured by the camera and detects walls, furniture, or steps. In addition, image analysis can be used to detect the presence or absence of obstacles such as wires in the brush. If it detects an object that is likely to get tangled, it can stop the brush from rotating. By using a semiconductor device according to one embodiment of the present invention for the battery 7140, a charging operation or It is possible to detect an overcurrent during a discharge operation. This can improve safety.

[0401] An electric vehicle 7160 is shown as an example of a moving object. The electric vehicle 7160 is an engine, a tire, The battery of the electric vehicle 7160 has a wheel, brakes, steering device, camera, etc. By using the semiconductor device according to one embodiment of the present invention, it is possible to detect an overcurrent during a charging operation or a discharging operation. Therefore, the reliability and safety of the electric vehicle 7160 can be improved. Cut.

[0402] In the above description, an electric vehicle is described as an example of a moving object. It is not limited to automobiles. For example, moving objects include trains, monorails, ships, and aircraft (helicopters). Copters, unmanned aerial vehicles (drones), airplanes, rockets, etc. By using a semiconductor device according to one embodiment of the present invention in a battery of such a mobile object, This allows the device to detect overcurrent during discharge. This improves the reliability and Safety can be improved.

[0403] A battery including the semiconductor device according to one embodiment of the present invention is used for a TV device 7200 (a television receiver device), smartphone 7210, PC 7220 (personal computer), PC 72 30, game machine 7240, game machine 7260, etc.

[0404] The smartphone 7210 is an example of a portable information terminal. It has a microphone, a camera, a speaker, various sensors, and a display unit.

[0405] The PC7220 and PC7230 are examples of notebook PCs and desktop PCs, respectively. The keyboard 7232 and the monitor device 7233 are connected to the 7230 by wireless or wired connection. The game machine 7240 is an example of a portable game machine. The game machine 7260 is a stationary game machine. The game machine 7260 is an example of a stationary game machine. 262 is connected.

[0406] By providing a semiconductor device according to one embodiment of the present invention to a battery of an electronic device, a charging operation or It is possible to detect overcurrent during discharging operation, thereby improving the reliability and safety of electronic devices. It can be improved.

[0407] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is possible. [Explanation of symbols]

[0408] 101: comparator, 102: capacitance, 103: capacitance, 111: transistor, 112: Transistor, 113: transistor, 114: transistor, 121: resistor, 122: Wiring, 200: semiconductor device, 201: terminal, 202: terminal, 203: terminal, 204: terminal 210: control circuit, 211: resistor, 212: capacitor, 213: transistor, 214: Transistor, 215: diode, 216: diode, 220: potential generating circuit, 221 : terminal, 222: terminal, 223: terminal, 224: terminal, 225: terminal, 226: terminal, 2 27: terminal, 100C: semiconductor device, 100D: semiconductor device, 300: secondary battery

Claims

1. a control circuit electrically connected to a secondary battery, a potential generating circuit controlled by the control circuit, and a comparator; the potential generating circuit is electrically connected to a non-inverting input terminal of the comparator; the potential generating circuit is electrically connected to the inverting input terminal of the comparator; an output terminal of the comparator is electrically connected to the control circuit; The comparator is a semiconductor circuit having a function of comparing a voltage of a first node electrically connected to the non-inverting input terminal with a voltage of a second node electrically connected to the inverting input terminal.

2. a control circuit electrically connected to a secondary battery, a potential generating circuit controlled by the control circuit, and a comparator; the potential generating circuit is electrically connected to a non-inverting input terminal of the comparator; the potential generating circuit is electrically connected to the inverting input terminal of the comparator; an output terminal of the comparator is electrically connected to the control circuit; The comparator has a function of comparing a voltage of a first node electrically connected to the non-inverting input terminal with a voltage of a second node electrically connected to the inverting input terminal, and has a function of outputting a signal indicating that an overcurrent has been detected when the voltage of the second node is greater than the voltage of the first node.

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