Wafer
The wafer design with a strengthened intersection portion in the quartz substrate addresses the issue of stress-induced breakage, enabling higher frequency operation and increased chip density in quartz resonators.
Patent Information
- Application Number
- JP2023193915
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2023-11-14
- Publication Date
- 2025-05-26
AI Technical Summary
The quartz substrate in existing quartz resonators is prone to damage due to stress concentration at the intersection of linear frame portions, especially when the substrate becomes thinner with increasing operating frequencies, and this issue is exacerbated by the demand for higher frequencies in mobile communication systems.
A plate-like wafer design with a frame portion surrounding a chip formation region, featuring first and second crossbar portions that intersect in the chip formation region, where the intersection portion has a larger width than the crossbar portions, enhancing the strength and reducing the likelihood of breakage.
This design effectively reduces the likelihood of breakage due to stress concentration at the intersection, while allowing for a wider chip formation region and increased number of chips per wafer, even when the wafer is thin.
Smart Images
Figure 2025080631000001_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a wafer on which a large number of chips are formed.
Background Art
[0002] FIG. 6 of Japanese Patent No. 5352777 describes a quartz substrate 9 having two orthogonal linear frame portions 15a and 15b. An elongated branch frame portion 18 is provided between the linear frame portion 15a and the annular frame portion 14, and a large number of device forming portions 16 are provided on both edges of the branch frame portion 18. A quartz resonator 8 can be obtained by separating the portion of the device forming portion 16 from the branch frame portion 18.
Prior Art Documents
Patent Documents
[0003]
Patent Document 1
Summary of the Invention
Problems to be Solved by the Invention
[0004] In the quartz substrate 9 of Japanese Patent No. 5352777, stress is likely to concentrate at the intersection of the two linear frame portions 15a and 15b. Therefore, when an external force is applied to the quartz substrate 9, for example, when it is attached to a jig, there is a problem that stress concentrates at this intersection and it is likely to be damaged.
[0005] In recent years, with the increase in speed and capacity of mobile communication systems (such as 5G and 6G), the operating frequency of electronic devices has been increasingly increasing, and there is a demand for higher frequencies in quartz resonators used for generating clock signals and the like. Since the quartz wafer used for manufacturing the quartz resonator becomes thinner as the frequency increases, there is a demand for thinning of the quartz wafer. However, when the quartz substrate 9 (quartz wafer) becomes thinner in the structure shown in Japanese Patent No. 5352777, the intersection of the linear frame portions 15a and 15b is more likely to be damaged.
[0006] The present invention has been made in view of such circumstances, and an object thereof is to provide a wafer in which local wafer breakage, particularly breakage due to stress concentration at right-angled portions, is less likely to occur in a structure in which a large number of cuttable chips are formed.
Means for Solving the Problems
[0007] One aspect of the present invention is a plate-like wafer in which a large number of chips are formed, having a frame portion surrounding a chip formation region in which the chips are formed, a first crossbar portion whose both ends are connected to the frame portion, and both ends being connected to the frame portion and intersecting the first crossbar portion in the chip formation region. A second crossbar portion, a portion where the first crossbar portion and the second crossbar portion intersect is called an intersection portion, a portion extending from the intersection portion to the frame portion in the first crossbar portion is called a first crossbar portion main body, and a portion extending from the intersection portion to the frame portion in the second crossbar portion is called a second crossbar portion main body. The width of the first crossbar portion main body in the short direction of the first crossbar portion is called the lateral width W1, the width of the second crossbar portion main body in the short direction of the second crossbar portion is called the lateral width W2, the width of the intersection portion in the short direction of the first crossbar portion is called the lateral width C1, and the width of the intersection portion in the short direction of the second crossbar portion is called the lateral width C2. The lateral width C1 of the intersection portion is larger than the lateral width W1 of the first crossbar portion main body, and the lateral width C2 of the intersection portion is larger than the lateral width W2 of the second crossbar portion main body. According to this configuration, stress is likely to concentrate at the intersection portion of the first crossbar portion and the second crossbar portion. However, since the lateral width C1 of the intersection portion is larger than the lateral width W1 of the first crossbar portion main body, and the lateral width W2 of the intersection portion is larger than the lateral width W2 of the second crossbar portion main body, the strength of the intersection portion is improved, and even if stress concentrates, the intersection portion is less likely to break. In addition, compared with the case where the entire first crossbar portion and the second crossbar portion are thickened to increase the strength of the intersection portion, the chip formation region can be widened, so the number of chips per wafer can be increased.
[0008] Preferably, the frame portion has an annular shape, and the first crossbar portion and the second crossbar portion are orthogonal to each other at the central portion in the longitudinal direction of the first crossbar portion and the central portion in the longitudinal direction of the second crossbar portion. Thereby, since the locations where the frame portion is supported by the first crossbar portion and the second crossbar portion are separated at substantially equal intervals, deformation of the frame portion due to an external force is likely to be suppressed.
[0009] Preferably, the value C1 / W1 obtained by dividing the width C1 of the intersection by the width W1 of the first bar portion main body is 1.8 to 2.2, and the value C2 / W2 obtained by dividing the width C2 of the intersection by the width W2 of the second bar portion main body is 1.5 to 2.0. Thereby, while suppressing a decrease in the chip formation region due to the thickening of the first bar portion main body and the second bar portion main body, the strength of the intersection can be increased and breakage can be made less likely to occur.
[0010] Preferably, the wafer is provided with a plurality of chips cuttable respectively, has a plurality of third bar portions extending in parallel with the second bar portion in the chip formation region, and at least a part of the third bar portions has one end connected to the first bar portion main body, and the width W2 of the second bar portion main body is smaller than the width W1 of the first bar portion main body. Thereby, when cutting a chip from the third bar portion, since the external force accompanying the cutting does not directly act on the second bar portion via the third bar portion, the width W2 of the second bar portion main body may be smaller than the width W1 of the first bar portion main body. As the width W2 of the second bar portion main body becomes smaller, the chip formation region becomes larger, and the number of chips per wafer can be increased.
[0011] Preferably, the value W2 / W1 obtained by dividing the width W2 of the second bar portion main body by the width W1 of the first bar portion main body is 0.6 < W2 / W1 < 1.0. Thereby, while maintaining the strength of the entire wafer obtained by the second bar portion supporting the first bar portion within an appropriate range, the width W2 of the second bar portion main body can be reduced to increase the number of chips per wafer.
[0012] Preferably, the wafer has one or more fourth bar portions having one end connected to the second bar portion main body and the other end connected to the frame portion and extending in parallel with the first bar portion, and at least a part of the third bar portions has one end connected to one of the fourth bar portions and the other end connected to the frame portion, the first bar portion main body, or another one of the fourth bar portions. Thereby, since the third bar portion is supported by the fourth bar portion, when cutting a chip provided on the third bar portion, large deformation of the third bar portion due to twisting or bending is likely to be suppressed.
[0013] Preferably, the wafer is a quartz wafer. This makes it easier to avoid breakage at the intersection due to stress concentration even in a thin quartz wafer.
Advantages of the Invention
[0014] According to the present invention, it is possible to provide a wafer in which breakage due to local stress concentration is less likely to occur in a structure in which a large number of cuttable chips are formed.
Brief Description of the Drawings
[0015]
Figure 1
Figure 2
Figure 3
Modes for Carrying Out the Invention
[0016] Hereinafter, a wafer according to an embodiment of the present invention will be described with reference to the drawings. The wafer according to the present embodiment is a plate-shaped wafer in which a large number of chips are formed, for example, a quartz wafer in which chips of a crystal resonator are formed.
[0017] FIG. 1 is a diagram showing an example of a wafer according to the present embodiment. The wafer 1 shown in FIG. 1 has a frame portion 11 surrounding a chip formation region 10 in which a large number of chips 30 are formed, and a first bar portion 21 and a second bar portion 22 whose both ends are connected to the frame portion 11. The first bar portion 21 and the second bar portion 22 intersect in the chip formation region 10. In the example of FIG. 1, the first bar portion 21 and the second bar portion 22 are orthogonal to each other at the central portion in the longitudinal direction of the first bar portion 21 and the central portion in the longitudinal direction of the second bar portion 22. The intersection portion 200, which is the intersecting portion of the first bar portion 21 and the second bar portion 22, is located approximately at the center of the chip formation region 10.
[0018] Here, when the crystal resonator is an AT-cut crystal resonator, the first bridge portion 21 is parallel to the X-axis of the crystal, and the second bridge portion 22 is parallel to the Z'-axis of the crystal. This is the arrangement of the bridge portions corresponding to an AT-cut crystal resonator abbreviated as so-called X-long. Or conversely, the first bridge portion 21 is parallel to the Z'-axis of the crystal, and the second bridge portion 22 is parallel to the X-axis of the crystal. This is the arrangement of the bridge portions corresponding to an AT-cut crystal resonator abbreviated as so-called Z-long. Also, when the crystal resonator is a tuning fork type crystal resonator, the first bridge portion 21 is parallel to the Y'-axis of the crystal, and the second bridge portion 22 is parallel to the X-axis of the crystal. Further, when the crystal resonator is a two-fold rotation crystal resonator typified by SC-cut or the like, the first bridge portion 21 is parallel to the X''-axis of the crystal, the second bridge portion 22 is parallel to the Z''-axis of the crystal, or vice versa. In the above expression of the crystal axes, the crystal axes with dashes are those in which the axes are shifted due to the cutting angle of the crystal resonator with respect to the normal crystal axes.
[0019] The first bridge portion 21 includes two first bridge portion main bodies (210a, 210b) that are portions extending from the intersection portion 200 to the frame portion 11. Also, the second bridge portion 22 includes two second bridge portion main bodies (220a, 220b) that are portions extending from the intersection portion 200 to the frame portion 11. Hereinafter, the first bridge portion main bodies 210a and 210b may be referred to as "first bridge portion main body 210" without distinction, and the second bridge portion main bodies 220a and 220b may be referred to as "second bridge portion main body 220" without distinction.
[0020] As shown in FIG. 1, both the first bridge portion 21 and the second bridge portion 22 have a strip shape. The lateral width W1 of the first bridge portion main body 210 in the short side direction (the horizontal direction of the paper surface of FIG. 1) of the first bridge portion 21 and the lateral width W2 of the first bridge portion main body 210 in the short side direction (the vertical direction of the paper surface of FIG. 1) of the second bridge portion 22 are both substantially constant.
[0021] Also, as shown in FIG. 1, the lateral width C1 of the intersection portion 200 in the short side direction of the first crossbar portion 21 is larger than the lateral width W1 of the first crossbar main body 210. Further, the lateral width C2 of the intersection portion 200 in the short side direction of the second crossbar portion 22 is larger than the lateral width W2 of the second crossbar main body 220. That is, the intersection portion 200 has a larger width compared to the first crossbar main body 210 and the second crossbar main body 220. By increasing the width of the intersection portion 200, the strength of the intersection portion 200 is enhanced.
[0022] Furthermore, as shown in FIG. 1, the lateral width W2 of the second crossbar main body 220 is smaller than the lateral width W1 of the first crossbar main body 210. The second crossbar main body 220 is not directly connected to the third crossbar portion 23 described below, and since the force from the third crossbar portion 23 does not directly act thereon, the lateral width can be made smaller than that of the first crossbar main body 210.
[0023] As shown in FIG. 1, the first crossbar portion 21, which has a larger lateral width than the second crossbar portion 22, is formed with a first positioning hole 41 and a second positioning hole 42. Pins for positioning the wafer 1 with respect to a jig or the like are inserted into the first positioning hole 41 and the second positioning hole 42, respectively.
[0024] The wafer 1 shown in FIG. 1 has a plurality of third crossbar portions 23, each of which is provided with a plurality of chips 30 that can be cut out. The plurality of third crossbar portions 23 extend parallel to each other in the chip formation region 10. Also, the plurality of third crossbar portions 23 each extend parallel to the second crossbar portion 22.
[0025] FIG. 2 is an enlarged view of the third crossbar portion 23 provided with the chips 30. As shown in FIG. 2, the third crossbar portion 23 has a strip shape, and the lateral width W3 in the short side direction (the vertical direction of the paper surface in FIG. 2) of the third crossbar portion 23 is substantially constant. A plurality of chips 30 of the same size are provided side by side at equal intervals on one side edge portion of the third crossbar portion 23. In the example of FIG. 2, electrodes 31 are formed on the front surface side and the back surface side of the chip 30, respectively. The chip 30 has a rectangular shape, and the chip 30 is connected to the third crossbar portion 23 at one side of the rectangular shape. A horizontally long through hole 32 is formed between the chip 30 and the third crossbar portion 23. Due to this through hole 32, the width of the portion connecting the chip 30 and the third crossbar portion 23 becomes narrow, so that the chip 30 can be easily folded off (folded and cut off) from the third crossbar portion 23 by an automatic machine or the like.
[0026] The wafer 1 shown in FIG. 1 has fourth crossbar portions 24a to 24d (hereinafter, may be referred to as "fourth crossbar portion 24" without distinction) having one end connected to the frame portion 11 and the other end connected to the second crossbar portion 22. In the example of FIG. 1, the chip formation region 10 is divided into four regions by the first crossbar portion 21 and the second crossbar portion 22 that intersect at the center of the chip formation region 10, and one fourth crossbar portion 24 extends through each of these four regions. The fourth crossbar portion 24 has a strip shape, and the lateral width W4 in the short side direction (the horizontal direction of the paper surface in FIG. 1) of the fourth crossbar portion 24 is substantially constant.
[0027] The four fourth crossbar portions 24 are line-symmetric with respect to the first crossbar portion 21 and line-symmetric with respect to the second crossbar portion 22. That is, the fourth crossbar portion 24a and the fourth crossbar portion 24d are line-symmetric with respect to the first crossbar main body 210a, and the fourth crossbar portion 24b and the fourth crossbar portion 24c are line-symmetric with respect to the first crossbar main body 210b. Also, the fourth crossbar portion 24a and the fourth crossbar portion 24b are line-symmetric with respect to the second crossbar main body 220b, and the fourth crossbar portion 24d and the fourth crossbar portion 24c are line-symmetric with respect to the second crossbar main body 220a.
[0028] One end of the third crossbar portion 23 is connected to the fourth crossbar portion 24, and the other end is connected to the first crossbar portion 21 or the frame portion 11. That is, the third crossbar portion 23 does not directly cross from the first crossbar portion 21 to the frame portion 11, but is supported by the fourth crossbar portion 24 between the first crossbar portion 21 and the frame portion 11.
[0029] In the example of FIG. 1, some of the third crossbar portions 23 (the third crossbar portions 23 from the third row from the top to the third crossbar portions 23 from the fourth row from the bottom) are not connected to the fourth crossbar portion 24, but are connected between the frame portion 11 and the first crossbar portion 21.
[0030] In the example of FIG. 1, the first crossbar portion 21 and the second crossbar portion 22 are orthogonal. Also, the third crossbar portion 23 and the second crossbar portion 22 extend in parallel, and the fourth crossbar portion 24 and the first crossbar portion 21 extend in parallel. That is, the third crossbar portion 23 extends in a direction orthogonal to the first crossbar portion 21 and the fourth crossbar portion 24, respectively.
[0031] Also, in the example of FIG. 1, the outer shape of the wafer 1 is circular, and the frame portion 11 has an annular shape. The first crossbar portion 21 and the second crossbar portion 22 are orthogonal at the central portion in the longitudinal direction of the first crossbar portion 21 and the central portion in the longitudinal direction of the second crossbar portion 22.
[0032] One end of the fourth crossbar portion 24 is connected to the central portion in the longitudinal direction of the second crossbar portion 22 (the second crossbar body 220) that crosses between the first crossbar portion 21 and the frame portion 11. In the example of FIG. 1, the length from the connection portion of the second crossbar portion 22 and the fourth crossbar portion 24 to the connection portion of the second crossbar portion 22 and the frame portion 11, and the length from the connection portion of the second crossbar portion 22 and the fourth crossbar portion 24 to the connection portion of the second crossbar portion 22 and the first crossbar portion 21 are substantially the same.
[0033] In the wafer 1 according to the present embodiment, at least a part of the inner edge of the frame portion 11 facing the chip formation region 10 is along a virtual circle 9 with a diameter d (radius r×2). The first crossbar portion 21 and the second crossbar portion 22 intersect at substantially the central portion of this virtual circle 9. In this case, it is desirable that the value (d / L) obtained by dividing the diameter d of the virtual circle 9 by the distance L between the first crossbar portion 21 and the fourth crossbar portion 24 is 3.5 to 4.
[0034] For example, when the diameter d of the virtual circle 9 is 92 [mm], the distance L between the first crossbar portion 21 and the fourth crossbar portion 24 is preferably 23.0 to 26.3 [mm].
[0035] When the diameter d of the virtual circle 9 is 92 [mm], the thickness and width of each crossbar portion (21 to 24) are preferably included in the following ranges, for example. Thickness of each crossbar portion (21 to 24): 0.08 to 0.10 [mm] Width W1 of the first crossbar portion main body 210: 3.00 to 4.37 [mm] Width W2 of the second crossbar portion main body 220: 3.00 to 4.52 [mm] Width W3 of the third crossbar portion 23: 0.18 to 0.25 [mm] Width W4 of the fourth crossbar portion 24: 0.15 to 0.30 [mm]
[0036] Also, in the wafer 1 according to the present embodiment, the value C1 / W1 obtained by dividing the width C1 of the intersection portion 200 by the width W1 of the first crossbar portion main body 210 is preferably 1.8 to 2.2, and the value C2 / W2 obtained by dividing the width C2 of the intersection portion 200 by the width W2 of the second crossbar portion main body 220 is preferably 1.5 to 2.0. That is, the intersection portion 200 preferably has a width about twice that of the first crossbar portion 21 and the second crossbar portion 22.
[0037] Furthermore, in the wafer 1 according to the present embodiment, the value W2 / W1 obtained by dividing the width W2 of the second crossbar portion main body 220 by the width W1 of the first crossbar portion main body 210 is preferably 0.6 < W2 / W1 < 1.0.
[0038] According to the wafer 1 according to the present embodiment having the above-described configuration, both ends of the first crossbar portion 21 and the second crossbar portion 22 are connected to the frame portion 11, and the first crossbar portion 21 and the second crossbar portion 22 intersect in the chip formation region 10. And, in the intersection portion 200 of the first crossbar portion 21 and the second crossbar portion 22, the lateral width in the short direction of the first crossbar portion 21 is larger than that of the first crossbar main body 210 (C1>W1), and the lateral width in the short direction of the second crossbar portion 22 is larger than that of the second crossbar main body 220 (C2>W2). Thereby, stress is likely to concentrate on the intersection portion 200 of the first crossbar portion 21 and the second crossbar portion 22. However, since the lateral width C1 of the intersection portion 200 is larger than the lateral width W1 of the first crossbar main body 210, and the lateral width C2 of the intersection portion 200 is larger than the lateral width W2 of the second crossbar main body 220, the strength of the intersection portion 200 is improved, and even if stress concentrates, the intersection portion 200 is less likely to be damaged. In particular, even if the wafer 1 is a thin crystal wafer, breakage of the intersection portion 200 is likely to be avoided. Further, compared with the case where the entire first crossbar portion 21 and the second crossbar portion 22 are thickened to increase the strength of the intersection portion 200, the chip formation region 10 can be widened, so that the number of chips 30 per wafer can be increased.
[0039] Further, according to the wafer 1 according to the present embodiment, the frame portion 11 has an annular shape, and the first crossbar portion 21 and the second crossbar portion 22 are orthogonal to each other at the central portion in the longitudinal direction of the first crossbar portion 21 and the central portion in the longitudinal direction of the second crossbar portion 22. Thereby, since the locations where the frame portion 11 is supported by the first crossbar portion 21 and the second crossbar portion 22 are separated at substantially equal intervals, deformation of the frame portion 11 due to an external force is likely to be suppressed.
[0040] Further, according to the wafer 1 according to the present embodiment, the value C1 / W1 obtained by dividing the lateral width C1 of the intersection portion 200 by the lateral width W1 of the first crossbar main body 210 is 1.8 to 2.2, and the value C2 / W2 obtained by dividing the lateral width C2 of the intersection portion 200 by the lateral width W2 of the second crossbar main body 220 is 1.5 to 2.0. Thereby, while suppressing a decrease in the chip formation region 10 due to thickening of the first crossbar main body 210 and the second crossbar main body 220, the strength of the intersection portion 200 can be increased to make breakage less likely to occur.
[0041] Further, according to the wafer 1 according to the present embodiment, a plurality of third bar portions 23, each provided with a plurality of chips 30 cuttably, extend in parallel with the second bar portions 22 in the chip formation region 10, and at least a part of the third bar portions 23 has one end connected to the first bar portion main body 210. When cutting the chip 30 from the third bar portion 23, the external force accompanying the cutting acts on the first bar portion 21 via the third bar portion 23, but does not directly act on the second bar portion 22. Therefore, the width W2 of the second bar portion main body 220 can be made smaller than the width W1 of the first bar portion main body 210. By making the width W2 of the second bar portion main body 220 smaller, the chip formation region 10 becomes larger than when making it the same as the width W1, and the number of chips 30 per wafer can be increased.
[0042] Further, according to the wafer 1 according to the present embodiment, the value W2 / W1 obtained by dividing the width W2 of the second bar portion main body 220 by the width W1 of the first bar portion main body 210 is 0.6 < W2 / W1 < 1.0. Thereby, while maintaining the strength of the entire wafer obtained by the second bar portion 22 supporting the first bar portion 21 within an appropriate range, the width W2 of the second bar portion main body 220 can be made smaller to increase the number of chips 30 per wafer.
[0043] Further, according to the wafer 1 according to the present embodiment, one end of the fourth bar portion 24 is connected to the second bar portion 22, and the other end of the fourth bar portion 24 is connected to the frame portion 11. A plurality of third bar portions 23 extending in parallel with the second bar portion 22 in the chip formation region 10 have one end connected to the fourth bar portion 24 and the other end connected to the frame portion 11 or the first bar portion 21. Thereby, since the third bar portion 23 is supported by the fourth bar portion 24, when cutting the chip 30 provided on the third bar portion 23, large deformation of the third bar portion 23 due to twisting or bending is likely to be suppressed.
[0044] Note that the present invention is not limited only to the above-described embodiments and includes various variations.
[0045] For example, the shape of the wafer is not limited to a circular shape, and other shapes (such as a quadrangle) may be used.
[0046] The base material of the wafer may be other than quartz, for example, it may be silicon.
[0047] In the above-described embodiment, the wafer 1 is provided with four fourth cross portions 24. However, in other examples of this embodiment, the number of fourth cross portions may be five or more, or may be three or less.
[0048] When two or more fourth cross portions are provided between the first cross portion and the frame portion, some of the third cross portions may be connected between the two fourth cross portions. That is, one end of the third cross portion may be connected to one fourth cross portion, and the other end of the third cross portion may be connected to another fourth cross portion.
[0049] In the modified example of the wafer 1 shown in FIG. 3, in the four regions of the chip formation region 10 divided by the orthogonal first cross portion 21 and second cross portion 22, two fourth cross portions 24 each extend across. That is, in the four regions, the fourth cross portions 24e and 24f extend across the region divided by the first cross portion main body 210a and the second cross portion main body 220b, the fourth cross portions 24g and 24h extend across the region divided by the first cross portion main body 210b and the second cross portion main body 220b, the fourth cross portions 24i and 24j extend across the region divided by the first cross portion main body 210b and the second cross portion main body 220a, and the fourth cross portions 24k and 24m extend across the region divided by the first cross portion main body 210a and the second cross portion main body 220a. Some of the third cross portions are connected between the two fourth cross portions 24 in each region (between 24e and 24f, between 24g and 24h, between 24i and 24j, between 24k and 24m).
Explanation of Reference Numerals
[0050] 1... Wafer, 10... Chip formation region, 11... Frame portion, 21... First cross portion, 22... Second cross portion, 23... Third cross portion, 24... Fourth cross portion, 24a - 24d... Fourth cross portion, 200... Intersection portion, 210, 210a, 210b... First cross portion main body, 220, 220a, 220b... Second cross portion main body, 30... Chip, 31... Electrode, 32... Through hole, 41, 41a... First positioning hole, 42, 42a... Second positioning hole, 9... Virtual circle
Claims
1. A plate-shaped wafer on which a plurality of chips are formed, a frame portion surrounding a chip formation region where the chips are formed, a first crossbar portion with both ends connected to the frame portion, having a second crossbar portion with both ends connected to the frame portion and intersecting the first crossbar portion in the chip formation region, a portion where the first crossbar portion and the second crossbar portion intersect is called an intersection portion, a portion extending from the intersection portion to the frame portion in the first crossbar portion is called a first crossbar portion main body, a portion extending from the intersection portion to the frame portion in the second crossbar portion is called a second crossbar portion main body, a width of the first crossbar portion main body in the short direction of the first crossbar portion is called a lateral width W1, a width of the second crossbar portion main body in the short direction of the second crossbar portion is called a lateral width W2, a width of the intersection portion in the short direction of the first crossbar portion is called a lateral width C1, a width of the intersection portion in the short direction of the second crossbar portion is called a lateral width C2, the lateral width C1 of the intersection portion is larger than the lateral width W1 of the first crossbar portion main body, the lateral width C2 of the intersection portion is larger than the lateral width W2 of the second crossbar portion main body, a wafer.
2. the frame portion has an annular shape, the first crossbar portion and the second crossbar portion are orthogonal to each other at a central portion in the longitudinal direction of the first crossbar portion and a central portion in the longitudinal direction of the second crossbar portion, the wafer according to Claim 1.
3. a value C1 / W1 obtained by dividing the lateral width C1 of the intersection portion by the lateral width W1 of the first crossbar portion main body is 1.8 to 2.2, a value C2 / W2 obtained by dividing the lateral width C2 of the intersection portion by the lateral width W2 of the second crossbar portion main body is 1.5 to 2.0, the wafer according to Claim 2.
4. a plurality of the chips are respectively provided so as to be cuttable, and having a plurality of third crossbar portions extending in parallel with the second crossbar portion in the chip formation region, at least a part of the third crossbar portions has one end connected to the first crossbar portion main body, the lateral width W2 of the second crossbar portion main body is smaller than the lateral width W1 of the first crossbar portion main body, the wafer according to Claim 2.
5. a value W2 / W1 obtained by dividing the lateral width W2 of the second crossbar portion main body by the lateral width W1 of the first crossbar portion main body satisfies 0.6 < W2 / W1 < 1.0, the wafer according to Claim 4.
6. having one or more fourth crossbar portions with one end connected to the second crossbar portion main body and the other end connected to the frame portion and extending in parallel with the first crossbar portion, At least a part of the third crossbar portion has one end connected to one of the fourth crossbar portions and the other end connected to the frame portion, the first crossbar portion body, or another one of the fourth crossbar portions. The wafer according to claim 4.
7. The wafer according to any one of claims 1 to 6, wherein the wafer is a quartz wafer.
Citation Information
Patent Citations
Method of heat medium circulation for textile product finishing machine
JP1978052777A