Multilayer electronic component

Abstract

To provide a multilayer electronic component in which stress due to electric strain effects is dispersed, mechanical characteristics including the crack-resisting property are improved, and the capacity change rate under the DC bias voltage is improved.SOLUTION: The multilayer electronic component includes: a body including a plurality of first dielectric layers, first and second internal electrodes 121 and 122 arranged separately from one another on the first dielectric layers, and a floating electrode 123 arranged alternately with the internal electrodes in a first direction with the first dielectric layer in between; a first external electrode 131 and a second external electrode 132 arranged on the body and connected to the first internal electrode and the second internal electrode, respectively. The body includes a double internal electrode 121b and 122b formed by arranging bilayered internal electrodes adjacent to each other in the first direction, with the second dielectric layer 111b in between.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a multilayer electronic component.

Background Art

[0002] A multilayer ceramic capacitor (MLCC), which is one of multilayer electronic components, is a chip-type capacitor mounted on a printed circuit board of various electronic products such as video devices like liquid crystal display (LCD) and plasma display panel (PDP), computers, smartphones, and mobile phones, and plays a role of charging or discharging electricity.

[0003] Such a multilayer ceramic capacitor can be used as a component of various electronic devices due to its advantages of being small in size, ensuring high capacitance, and being easy to mount. As various electronic devices such as computers and mobile devices are miniaturized and have increased output, the requirements for miniaturization and high capacitance of multilayer ceramic capacitors are increasing.

[0004] On the other hand, in a high-voltage environment, the electrostriction effect in which deformation of components occurs due to voltage application appears. Such an electrostriction effect may be concentrated in the central part of the multilayer electronic component to generate cracks. In such a situation, a structure design that can prevent stress concentration so that such cracks do not occur is required.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] One of the various problems to be solved by the present invention is to disperse stress due to the electrostrictive effect.

[0007] One of the various problems to be solved by the present invention is to provide a multilayer electronic component with improved mechanical properties.

[0008] One of the various problems to be solved by the present invention is to provide a multilayer electronic component with improved capacitance characteristics.

[0009] However, the various problems to be solved by the present invention are not limited to the above-described content, and can be more easily understood in the process of describing specific embodiments of the present invention.

Means for Solving the Problems

[0010] A multilayer electronic component according to an embodiment of the present invention includes a plurality of first dielectric layers, internal electrodes including a first internal electrode and a second internal electrode disposed separately from each other on the first dielectric layer, and a floating electrode disposed alternately with the internal electrodes in a first direction with the first dielectric layer interposed therebetween. The multilayer electronic component further includes a main body disposed on the main body and including a first external electrode and a second external electrode respectively connected to the first internal electrode and the second internal electrode. The main body may include a double internal electrode in which two layers of internal electrodes are disposed adjacent to each other in the first direction with a second dielectric layer interposed therebetween.

[0011] A multilayer electronic component according to another embodiment of the present invention includes a plurality of first dielectric layers, internal electrodes including a first internal electrode and a second internal electrode disposed separately from each other on the first dielectric layer, and a floating electrode disposed alternately with the internal electrodes in a first direction with the first dielectric layer interposed therebetween. The multilayer electronic component further includes a main body disposed on the main body and including a first external electrode and a second external electrode respectively connected to the first internal electrode and the second internal electrode. The main body may include a double floating electrode in which two layers of floating electrodes are disposed adjacent to each other in the first direction with a second dielectric layer interposed therebetween.

Effects of the Invention

[0012] One of the various effects of the present invention is to disperse the stress due to the electrostrictive effect to prevent the generation of cracks.

[0013] One of the various effects of the present invention is to improve the mechanical properties of the multilayer electronic component.

[0014] One of the various effects of the present invention is to improve the capacitance characteristics of the multilayer electronic component.

[0015] However, the diverse and beneficial advantages and effects of the present invention are not limited to the above-described content, and can be more easily understood in the process of explaining the specific embodiments of the present invention.

Brief Description of the Drawings

[0016]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5a

Figure 5b

Modes for Carrying Out the Invention

[0017] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Also, the embodiments of the present invention are provided to more fully explain the present invention to an ordinary technician. Therefore, the shape, size, etc. of the elements in the drawings may be enlarged, reduced (or emphasized or simplified) for a clearer explanation, and the elements indicated by the same reference numerals in the drawings are the same elements.

[0018] And, in order to clearly explain the present invention in the drawings, parts not related to the explanation are omitted, and the size and thickness of each configuration shown in the drawings are arbitrarily shown for convenience of explanation. Therefore, the present invention is not necessarily limited to what is shown in the drawings. Also, for components having the same function within the scope of the same concept, the same reference numerals are used for explanation. Further, throughout the specification, when a certain part "includes" a certain component, this means that other components can be further included, rather than excluding other components, unless otherwise stated to the contrary.

[0019] In the drawings, the first direction can be defined as the stacking direction or the thickness T direction, the second direction as the length L direction, and the third direction as the width W direction.

[0020] Stacked electronic component FIG. 1 schematically shows a perspective view of a stacked electronic component according to an embodiment of the present invention, FIG. 2 schematically shows a cross-sectional view taken along the line I-I' of FIG. 1, FIG. 3 schematically shows an enlarged view of the M region of FIG. 2, and FIG. 4 schematically shows a cross-sectional view taken along the line I-I' of FIG. 1 in a stacked electronic component according to another embodiment of the present invention.

[0021] Hereinafter, with reference to FIGS. 1 to 4, a multilayer electronic component according to an embodiment of the present invention will be described in detail. However, although a multilayer ceramic capacitor will be described as an example of the multilayer electronic component, the present invention can also be applied to various electronic products using a dielectric composition, such as an inductor, a piezoelectric element, a varistor, or a thermistor.

[0022] A multilayer electronic component 100 according to an embodiment of the present invention includes a plurality of first dielectric layers 111a, internal electrodes 121 and 122 including a first internal electrode 121 and a second internal electrode 122 that are spaced apart from each other on the first dielectric layer 111a, and a floating electrode 123 that is alternately arranged with the internal electrodes 121 and 122 in a first direction with the first dielectric layer 111a interposed therebetween. The multilayer electronic component 100 also includes a first external electrode 131 and a second external electrode 132 that are arranged on the main body 110 and are respectively connected to the first internal electrode 121 and the second internal electrode 122. The main body 110 may include double internal electrodes 121b and 122b in which two layers of internal electrodes 121b-1, 122b-1, 121b-2, and 122b-2 are arranged adjacent to each other in the first direction with a second dielectric layer 121b interposed therebetween.

[0023] The main body 110 may include a first dielectric layer 111a, a second dielectric layer 111b, internal electrodes 121 and 122, and a floating electrode 123.

[0024] Specifically, the main body 110 may include a capacitance forming portion in which the internal electrodes 121 and 122 and the floating electrode 123 are alternately laminated in the first direction with the first dielectric layer 111a interposed therebetween to form a capacitance.

[0025] There is no particular limitation on the specific shape of the main body 110. As shown in the figure, the main body 110 can have a hexahedral shape or a shape similar thereto. Due to the shrinkage of the ceramic particles contained in the main body 110 during the firing process, the main body 110 does not have a perfect hexahedral shape with straight lines, but can have a substantially hexahedral shape.

[0026] The main body 110 can have a first surface 1 and a second surface 2 facing each other in a first direction, a third surface 3 and a fourth surface 4 facing each other in a second direction, and a fifth surface 5 and a sixth surface 6 facing each other in a third direction, which are connected to the first surface 1, the second surface, the third surface, and the fourth surface 4.

[0027] The plurality of first dielectric layers 111a forming the main body 110 are in a fired state, and the boundaries between adjacent first dielectric layers 111a can be integrated to such an extent that they are difficult to confirm without using a Scanning Electron Microscope (SEM).

[0028] The raw material for forming the first dielectric layer 111a is not limited as long as sufficient capacitance can be obtained. Generally, perovskite (ABO 3 ) - based materials can be used. For example, barium titanate - based materials, lead - composite perovskite - based materials, or strontium titanate - based materials can be used. The barium titanate - based material can contain BaTiO 3 - based ceramic particles. As examples of the ceramic particles, BaTiO 3 , BaTiO 3 in which Ca (calcium), Zr (zirconium), etc. are partially solid - solved (Ba 1-x Ca x )TiO 3 (0 < x < 1), Ba(Ti 1-y Ca y )O 3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O 3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O 3 (0 < y < 1), etc. can be mentioned.

[0029] Also, the raw material for forming the first dielectric layer 111a is barium titanate (BaTiO 3Particles such as can have various ceramic additives, organic solvents, binders, dispersants, etc. added according to the purpose of the present invention.

[0030] The thickness td1 of the first dielectric layer 111a does not particularly need to be limited.

[0031] However, in order to ensure stable reliability in the high-voltage environment of the multilayer electronic component, the thickness of the first dielectric layer 111a can be 100 μm or less, and preferably, the thickness of the first dielectric layer 111a can be 90 μm or less. However, without being particularly limited thereto, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the thickness of the first dielectric layer 111a can be 30 μm or less, preferably 20 μm or less, and more preferably 10 μm or less.

[0032] In the case of a super-small product, the thickness of the first dielectric layer 111a can be 3.0 μm or less, preferably 1.0 μm or less, and more preferably 0.6 μm or less.

[0033] Here, the thickness td1 of the first dielectric layer 111a can mean the thickness td1 of the first dielectric layer 111a disposed between the internal electrodes 121, 122 and the floating electrode 123.

[0034] On the other hand, the thickness td1 of the first dielectric layer 111a can mean the size of the first dielectric layer 111a in the first direction. Also, the thickness td1 of the first dielectric layer 111a can mean the average thickness td1 of the first dielectric layer 111a and can mean the average size of the first dielectric layer 111a in the first direction.

[0035] The average size of the first dielectric layer 111a in the first direction can be measured by scanning an image of the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one first dielectric layer 111a in the first direction can mean the average value calculated by measuring the size in the first direction at 30 points that are equally spaced in the second direction for one first dielectric layer 111a in the scanned image. When the measurement of such an average value is extended to 10 first dielectric layers 111a to measure the average value, the average size of the first dielectric layer 111a in the first direction can be further generalized.

[0036] In the present invention, the internal electrodes 121 and 122 are described as including a single-layer internal electrode 121a, 122a and a double internal electrode 121b, 122b. Unless otherwise specified, the description of the internal electrodes 121 and 122 can be equally applied to the single-layer internal electrode 121a, 122a and the double internal electrode 121b, 122b.

[0037] The internal electrodes 121 and 122 can be arranged on the first dielectric layer 111a so as to be spaced apart from each other in the second direction.

[0038] The internal electrodes 121 and 122 can include a first internal electrode 121 and a second internal electrode 122. The first internal electrode 121 and the second internal electrode 122 can be arranged on the first dielectric layer 111a that constitutes the main body 110 so as to be spaced apart from each other in the second direction, and can be exposed on the third surface 3 and the fourth surface 4 of the main body 110, respectively.

[0039] More specifically, the first internal electrode 121 can be exposed through the third surface 3 while being spaced apart from the fourth surface 4 and the second internal electrode 122, and the second internal electrode 122 can be exposed through the fourth surface 4 while being spaced apart from the third surface 3 and the first internal electrode 121. A first external electrode 131 is arranged on the third surface 3 of the main body 110 and can be connected to the first internal electrode 121, and a second external electrode 132 is arranged on the fourth surface 4 of the main body 110 and can be connected to the second internal electrode 122.

[0040] That is, the first internal electrode 121 is not connected to the second external electrode 132 but can be connected to the first external electrode 131, and the second internal electrode 122 is not connected to the first external electrode 131 but can be connected to the second external electrode 132. At this time, the first internal electrode 121 and the second internal electrode 122 can be electrically separated from each other by the region of the first dielectric layer 111a disposed in the middle in the second direction.

[0041] The floating electrode 123 can be alternately arranged with the internal electrodes 121 and 122 in the first direction with the first dielectric layer 111a interposed therebetween.

[0042] The floating electrode 123 can be disposed on the first dielectric layer 111a, but does not have to be disposed on the same first dielectric layer 111a as the internal electrodes 121 and 122.

[0043] Also, the floating electrode 123 can be disposed at a distance from the third surface 3 and the fourth surface 4 of the main body, and does not have to be electrically connected to the first external electrode 131 and the second external electrode 132.

[0044] The floating electrode 123 can partially overlap with the internal electrodes 121 and 122 to form a capacitance. More specifically, when one end of the first internal electrode 121 is in contact with the third surface 3, the other end of the first internal electrode 121 can partially overlap with one end of the floating electrode 123. When one end of the second internal electrode 122 is in contact with the fourth surface 4, the other end of the second internal electrode 122 can partially overlap with the other end of the floating electrode 123.

[0045] The region where the floating electrode 123 overlaps with the internal electrodes 121 and 122 is not particularly limited as long as it forms a sufficient capacitance.

[0046] On the other hand, the main body 110 can be formed by alternately laminating a ceramic green sheet on which the first internal electrode 121 and the second internal electrode 122 are printed and a ceramic green sheet on which the floating electrode 123 is printed, and then firing them.

[0047] The materials for forming the internal electrodes 121 and 122 and the floating electrode 123 are not particularly limited, and materials with excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 can include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0048] Also, the internal electrodes 121 and 122 and the floating electrode 123 can be formed by printing a conductive paste for internal electrodes, which contains one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, on a ceramic green sheet. As the printing method of the conductive paste for the internal electrodes, a screen printing method, a gravure printing method, or the like can be used, but the present invention is not limited thereto.

[0049] On the other hand, the thicknesses te1, te2, and te3 of the internal electrodes 121 and 122 and the floating electrode 123 do not need to be particularly limited. Here, the thickness of the first internal electrode 121 can be te1, the thickness of the second internal electrode 122 can be te2, and the thickness of the floating electrode 123 can be te3.

[0050] However, in order to achieve a higher capacitance of the multilayer electronic component, the thicknesses te1 and te2 of the internal electrodes 121 and 122 and the thickness te3 of the floating electrode 123 can each be 3.0 μm or less. In order to more easily achieve miniaturization and higher capacitance of the multilayer electronic component, the thicknesses te1 and te2 of the internal electrodes 121 and 122 and the thickness te3 of the floating electrode 123 can each be 1.0 μm or less, preferably 0.6 μm or less, and more preferably 0.4 μm or less.

[0051] Here, the thicknesses te1 and te2 of the internal electrodes 121 and 122 and the thickness te3 of the floating electrode 123 can represent the sizes of the internal electrodes 121 and 122 and the floating electrode 123 in the first direction. Also, the thicknesses te1 and te2 of the internal electrodes 121 and 122 and the thickness te3 of the floating electrode 123 can represent the average thickness te3 of the internal electrodes 121 and 122 and the floating electrode 123, and can represent the average size of the internal electrodes 121 and 122 and the floating electrode 123 in the first direction.

[0052] The average size of the internal electrodes 121 and 122 and the floating electrode 123 in the first direction can be measured by scanning an image of the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of the internal electrodes 121 and 122 and the floating electrode in one layer in the first direction can be the average value calculated by measuring the size in the first direction at 30 equally spaced points in the second direction for the internal electrodes 121 and 122 and the floating electrode 123 in one layer in the scanned image. Also, when such measurement of the average value is extended to the internal electrodes 121 and 122 and the floating electrode 123 in 10 layers to measure the average value, the average size of the internal electrodes 121 and 122 and the floating electrode 123 in the first direction can be further generalized.

[0053] In one embodiment of the present invention, the main body 110 can include double internal electrodes 121b and 122b in which two layers of internal electrodes 121b and 122b are arranged adjacent to each other in the first direction with the second dielectric layer 111b interposed therebetween.

[0054] The double internal electrodes 121b and 122b can be the same as the single-layer internal electrodes 121a and 122a, except that they have a two-layer internal electrode structure 121b-1, 122b-1, 121b-2, and 122b-2. Within a non-contradictory range, the descriptions regarding the internal electrodes 121, 122, and the single-layer internal electrodes 121a and 122a can be equally applied to the double internal electrodes 121b and 122b. On the other hand, the double internal electrodes 121b and 122b may not include a floating electrode, and thus the second dielectric layer 111b does not contribute to the formation of capacitance.

[0055] More specifically, the double internal electrodes 121b and 122b can include double first internal electrodes 121b-1 and 121b-2, and double second internal electrodes 122b-1 and 122b-2. The double first internal electrodes 121b-1 and 121b-2 can have a structure in which double first-1 internal electrodes 121b-1 and double first-2 internal electrodes 121b-2 are alternately arranged with the second dielectric layer 111b interposed therebetween. The double second internal electrodes 122b-1 and 122b-2 can have a structure in which double second-1 internal electrodes 122-1b and double second-2 internal electrodes 122b-2 are alternately arranged with the second dielectric layer 111b of the double first internal electrodes interposed therebetween.

[0056] By including the double internal electrodes 121b and 122b in the main body 110, the regions where stress concentrates due to the electrostriction effect generated in a high-voltage environment are dispersed, thereby preventing the concentration of electrostriction stress and inducing the generation of cracks in the second dielectric layer 111b between the double internal electrodes 121b and 122b that do not form capacitance, and thus eliminating the electrostriction stress. The voltage applied per unit thickness (size in the first direction) of the first dielectric layer 111a can be reduced, improving the DC bias and breakdown voltage characteristics.

[0057] At this time, the double internal electrodes 121b and 122b can be arranged at the central portion of the main body 110 in the first direction. For example, when the main body 110 is divided into three equal parts in the first direction, the double internal electrodes 121b and 122b can be arranged in the second region among the three equal parts.

[0058] By arranging the double internal electrodes 121b and 122b at the central portion of the main body 110 in the first direction where the electrostrictive stress is most concentrated, the electrostrictive stress can be dispersed, and the DC bias and withstand voltage characteristics can be improved.

[0059] In one embodiment of the present invention, the double internal electrodes 121b and 122b included in the main body 110 can be one.

[0060] In other words, the main body 110 includes a structure in which the internal electrodes 121a, 122a and the floating electrode 123 are alternately arranged in the first direction with the first dielectric layer 111a interposed therebetween in most regions, and two layers of internal electrodes 121b, 122b are arranged adjacent to each other with the second dielectric layer 111b interposed therebetween. The double internal electrodes 121b, 122b of the structure of the internal electrodes 121b-1, 122b-1 / second dielectric layer 111b / internal electrodes 122b-1, 122b-2 can mean including one.

[0061] By including only one double internal electrode 121b and 122b, in the multilayer electronic component 100 of the same size, the DC bias applied per unit thickness (1 μm) of the first dielectric layer 111a can be further reduced.

[0062] Here, including only one double internal electrode 121b and 122b can mean including a set of two layers of internal electrodes 121b-1, 122b-1, 121b-2, and 122b-2.

[0063] As the number of the double internal electrodes 121b and 122b increases, sintering stress is greatly generated due to the difference in sinterability between the second dielectric layer 111b and the first dielectric layer 111a, and rather, the withstand voltage characteristics may be deteriorated. In addition, the risk of cracks occurring in the first dielectric layer 111a increases, and the capacitance characteristics may deteriorate.

[0064] The raw material for forming the second dielectric layer 111b is not particularly limited. Generally, perovskite (ABO 3A system material can be used, for example, a barium titanate-based material, a lead composite perovskite-based material, a strontium titanate-based material, etc. can be used. The barium titanate-based material can contain BaTiO 3 system ceramic particles. As an example of the ceramic particles, BaTiO 3 , BaTiO 3 in which Ca (calcium), Zr (zirconium), etc. are partially solid-solved (Ba 1-x Ca x )TiO 3 (0 < x < 1), Ba(Ti 1-y Ca y )O 3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O 3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O 3 (0 < y < 1), etc. can be mentioned.

[0065] Also, various ceramic additives, organic solvents, binders, dispersants, etc. can be added to the raw material for forming the second dielectric layer 111b according to the purpose of the present invention to particles such as barium titanate (BaTiO 3 ).

[0066] The thickness td2 of the second dielectric layer 111b does not need to be particularly limited.

[0067] However, in order to ensure stable reliability in the high-voltage environment of the multilayer electronic component, the thickness of the second dielectric layer 111b can be 15 μm or less, and preferably the thickness of the second dielectric layer 111b can be 10 μm or less.

[0068] However, it is not particularly limited thereto. In order to simultaneously achieve miniaturization and high capacitance in ultra-small products, the thickness of the second dielectric layer 111b can be 3.0 μm or less, preferably 1.0 μm or less, and more preferably 0.6 μm or less.

[0069] Here, the thickness td2 of the second dielectric layer 111b can mean the thickness td2 of the second dielectric layer 111b disposed between the first directions of the double internal electrodes 121b and 122b.

[0070] On the other hand, the thickness td2 of the second dielectric layer 111b can mean the size of the second dielectric layer 111b in the first direction. Also, the thickness td2 of the second dielectric layer 111b can mean the average thickness td2 of the second dielectric layer 111b, and can mean the average size of the second dielectric layer 111b in the first direction.

[0071] On the other hand, in one embodiment of the present invention, the composition of the second dielectric layer 111b can be different from the composition of the first dielectric layer 111a.

[0072] That the composition of the second dielectric layer 111b is different from the composition of the first dielectric layer 111a can mean that at least one of the additive, organic solvent, binder, and dispersant is different or the added content is different although the ceramic material is the same, or can mean that the ceramic materials are different, but is not particularly limited thereto.

[0073] By making the composition of the second dielectric layer 111b different from the composition of the first dielectric layer 111a, the first dielectric layer 111a forming the capacitance can improve the dielectric properties, and the second dielectric layer 111b where the electrostrictive stress concentrates can improve the strength properties. By making the compositions of the respective dielectric layers different, the structure and material can be appropriately changed according to the purpose of each dielectric layer.

[0074] On the other hand, the number of pores P per 1 μm included in the cross-section of the second dielectric layer 111b 2 is B, and when the number of pores P per 1 μm included in the cross-section of the first dielectric layer 111a 2 is A, B < A can be satisfied, and preferably B < 0.25 × A can be satisfied.

[0075] For example, the number of pores per 1 μm included in the cross-section of the second dielectric layer can be 5.00 or less. In other words, B ≤ 5.00 can be satisfied. 2 The number of pores per 1 μm included in the cross-section of the second dielectric layer can be 5.00 or less. In other words, B ≤ 5.00 can be satisfied.

[0076] Here, the cross-sections of the first dielectric layer 111a and the second dielectric layer 111b can mean the cross-sections in the first direction and the second direction at the center in the third direction of the main body 110, and the number of pores P can be measured using a program in an image taken through a scanning electron microscope (SEM) from the cross-section, but it is not particularly limited thereto.

[0077] The number of pores P per 1 μm included in the cross-section of the second dielectric layer 111b and the first dielectric layer 111a 2 By satisfying the number of pores P per 1 μm included in the cross-section of the second dielectric layer 111b and the first dielectric layer 111a with B < A, it is possible to suppress the generation of cracks in the first dielectric layer 111a induced by the concentration of the electrostrictive stress in the second dielectric layer 111b and prevent the deterioration of the dielectric properties.

[0078] Generally, the internal electrodes are designed to enhance the sinterability of adjacent dielectric layers and reduce the porosity, and contribute to the crystal grain growth. However, when the porosity in the dielectric layer decreases, as the sintering density increases, the sintering stress increases, and there is a risk of problems such as becoming vulnerable in the generation and propagation of cracks.

[0079] Therefore, it is possible to reduce the porosity of the second dielectric layer 111b that does not form the capacitance, facilitate the generation and propagation of cracks, and suppress the generation of cracks in the first dielectric layer 111a that forms the capacitance.

[0080] 1 μm included in the cross-section of the second dielectric layer 111b and the first dielectric layer 111a 2 When the number of pores P per 1 μm included in the cross-section of the second dielectric layer 111b satisfies A ≤ B, the force that induces crack generation in the second dielectric layer 111b is weak, and there is a possibility that a crack may be generated in the first dielectric layer 111a, which may reduce the dielectric properties.

[0081] In one embodiment of the present invention, the average size td1 in the first direction of the first dielectric layer 111a can be larger than the average size td2 in the first direction of the second dielectric layer 111b. In other words, td2 < td1 can be satisfied.

[0082] More specifically, the average size td1 in the first direction of the first dielectric layer 111a can be 8 times or more the average size td2 in the first direction of the second dielectric layer 111b. In other words, 8 × td2 ≤ td1 can be satisfied.

[0083] When the average size td1 in the first direction of the first dielectric layer 111a is larger than the average size td2 in the first direction of the second dielectric layer 111b (td2 < td1), the magnitude of the voltage applied per unit thickness (1 μm) of the first dielectric layer 111a can be reduced, and even if the stress due to the electrostriction effect is concentrated, generation of cracks can be easily prevented.

[0084] When the average size td1 in the first direction of the first dielectric layer 111a is less than or equal to the average size td2 in the first direction of the second dielectric layer 111b (td1 ≤ td2), the magnitude of the voltage applied per unit thickness (1 μm) of the first dielectric layer 111a can be increased, and there is a possibility that the stress due to the electrostriction effect is concentrated and a crack is generated in the first dielectric layer 111a, resulting in a reduction in dielectric properties.

[0085] On the other hand, for at least one average thickness td1 of the first dielectric layer 111a and at least one average thickness te1 of at least one of the plurality of internal electrodes 121a and 122a in one layer, 2 × te1 < td1 can be satisfied.

[0086] In other words, the average thickness td1 of one first dielectric layer 111a can be greater than twice the average thickness te1 of one layer of the internal electrodes 121a and 122a. Preferably, the average thickness td1 of the plurality of first dielectric layers 111a can be greater than twice the average thickness te of the plurality of one-layer internal electrodes 121a and 122a.

[0087] Generally, for high-voltage electrical components, the main issue is the reliability problem due to the decrease in the breakdown voltage (BDV) under a high-voltage environment.

[0088] Therefore, in order to prevent the decrease in the breakdown voltage under a high-voltage environment, by making the average thickness td1 of the first dielectric layer 111a even greater than twice the average thickness te of one layer of the internal electrodes 121a and 122a, the thickness of the first dielectric layer 111a, which is the distance between one layer of the internal electrodes 121 and 122 and the floating electrode 123, can be increased, and the breakdown voltage characteristics can be improved.

[0089] When the average thickness td1 of the first dielectric layer 111a is less than or equal to twice the average thickness te1 of one layer of the internal electrodes 121a and 122a, the average thickness of the first dielectric layer 111a, which is the distance between one layer of the internal electrodes 121a and 122a and the floating electrode 123, is thin, and the breakdown voltage may decrease, and a short circuit may occur between the internal electrodes 121a and 122a and the floating electrode 123.

[0090] A stacked electronic component 100 according to another embodiment of the present invention includes a plurality of first dielectric layers 111a, internal electrodes 121 and 122 including a first internal electrode 121 and a second internal electrode 122 that are spaced apart from each other on the first dielectric layer 111a, and floating electrodes 123 that are alternately arranged with the internal electrodes 121 and 122 in a first direction with the first dielectric layer 111a interposed therebetween. A main body 110, disposed on the main body 110, and a first external electrode 131 and a second external electrode 132 respectively connected to the first internal electrode 121 and the second internal electrode 122. The main body 110 may include a double floating electrode 123b in which two layers of floating electrodes 123b-1 and 123b-2 are arranged adjacent to each other in the first direction with a second dielectric layer 111b interposed therebetween.

[0091] In the present invention, the description of the double internal electrodes 121 and 122 can be identically applied to the double floating electrode 123, and the overlapping content is omitted, but it will be easily understood by an ordinary technician.

[0092] In one embodiment of the present invention, the main body 110 may include a double floating electrode 123b in which two layers of floating electrodes 123b-1 and 123b-2 are arranged adjacent to each other in the first direction with a second dielectric layer 111b interposed therebetween.

[0093] The double floating electrode 123b can be identical to the single-layer floating electrode 123a except having a two-layer floating electrode structure 123b-1 and 123b-2.

[0094] More specifically, the double floating electrode 123b may include a double first floating electrode 123b-1 and a double second floating electrode 123b-2, and the double first floating electrode 123b-1 and the double second floating electrode 123b-2 may be alternately arranged with the second dielectric layer 111b interposed therebetween.

[0095] In the present invention, the description of the floating electrode 123 includes a single-layer floating electrode 123a and a two-layer floating electrode 123b-1, 123b-2. Unless otherwise specified, the description of the floating electrode 123 can be similarly applied to the single-layer floating electrode 123a and the two-layer floating electrode 123b-1, 123b-2.

[0096] By including the double floating electrode 123b in the main body 110, the region where stress due to the electrostriction effect generated in a high voltage environment is concentrated is dispersed, thereby preventing the concentration of electrostriction stress and inducing the generation of cracks in the second dielectric layer 111b between the double floating electrodes 123b that do not form capacitance, and the electrostriction stress can be eliminated. The voltage applied per thickness (size in the first direction) of the first dielectric layer 111a can be reduced, and the DC bias and breakdown voltage characteristics can be improved.

[0097] At this time, the double floating electrode 123b can be disposed at the central portion of the main body 110 in the first direction. For example, when the main body 110 is divided into three equal parts in the first direction, the double floating electrode 123b can be disposed in the second region among the three equal parts.

[0098] By disposing the double floating electrode 123b at the central portion of the main body 110 in the first direction where the electrostriction stress is most concentrated, the electrostriction stress can be dispersed, and the DC bias and breakdown voltage characteristics can be improved.

[0099] In one embodiment of the present invention, the double floating electrode 123b included in the main body 110 can be one.

[0100] In other words, in most regions, the main body 110 includes a structure in which the internal electrodes 121a, 122a and the single-layer floating electrode 123a are alternately arranged in the first direction with the first dielectric layer 111a interposed therebetween, and the double floating electrode 123b having a structure in which two layers of floating electrodes 123b are adjacently arranged with the second dielectric layer 111b interposed therebetween, that is, the double floating electrode 123b-1 / second dielectric layer 111b / floating electrode 123b-2 structure, can be meant to include one.

[0101] By including only one double floating electrode 123b, in the multilayer electronic component 100 of the same size, the DC bias applied per unit thickness (1 μm) of the first dielectric layer 111a can be further reduced.

[0102] Here, including only one double floating electrode 123b can be meant to include one set of two layers of floating electrodes 123b-1 and 123b-2.

[0103] The more the double floating electrodes 123b are, the greater the sintering stress is generated due to the difference in sinterability between the second dielectric layer 111b and the first dielectric layer 111a, and rather the breakdown voltage characteristics can be deteriorated. Also, there is a great risk of cracks occurring in the first dielectric layer 111a and the capacitance characteristics may be deteriorated.

[0104] On the other hand, at least one average thickness td1 of the first dielectric layers 111a and at least one average thickness te3 of the floating electrodes 123 can satisfy 2×te3 < td1.

[0105] In other words, the average thickness td1 of one first dielectric layer 111a can be further greater than twice the average thickness te3 of one layer of the floating electrode 123. Preferably, the average thickness td1 of the plurality of first dielectric layers 111a can be further greater than twice the average thickness te3 of the plurality of floating electrodes 123.

[0106] Therefore, in order to prevent a decrease in the breakdown voltage in a high-voltage environment, by making the average thickness td1 of the first dielectric layer 111a even greater than twice the average thickness te3 of the floating electrode 123, the thickness of the first dielectric layer 111a, which is the distance between the internal electrodes 121, 122 of one layer and the floating electrode 123, can be increased, and the breakdown voltage characteristics can be improved.

[0107] When the average thickness td1 of the first dielectric layer 111a is less than or equal to twice the average thickness te3 of the floating electrode 123, the average thickness of the first dielectric layer 111a, which is the distance between the internal electrodes 121a, 122a of one layer and the floating electrode 123, is thin, and the breakdown voltage may decrease, and there is a risk of a short circuit occurring between the internal electrodes 121a, 122a and the floating electrode 123.

[0108] On the other hand, the main body 110 can include cover portions 112, 113 disposed on both end - surfaces in the first direction of the capacitance - forming portion.

[0109] Specifically, it can include a first cover portion 112 disposed on one surface in the first direction of the capacitance - forming portion and a second cover portion 113 disposed on the other surface in the first direction of the capacitance - forming portion. More specifically, it can include an upper cover portion 112 disposed on the upper part in the first direction of the capacitance - forming portion and a lower cover portion 113 disposed on the lower part in the first direction of the capacitance - forming portion.

[0110] The upper cover portion 112 and the lower cover portion 113 can be formed by stacking a single first dielectric layer 111a or two or more first dielectric layers 111a in the first direction on the upper and lower surfaces of the capacitance - forming portion, and can basically play a role in preventing damage to the internal electrodes 121, 122 due to physical or chemical stress.

[0111] The upper cover portion 112 and the lower cover portion 113 do not include the internal electrodes 121, 122 and can include the same material as the first dielectric layer 111a. That is, the upper cover portion 112 and the lower cover portion 113 can include a ceramic material, for example, barium titanate (BaTiO 3) can include a ceramic material.

[0112] On the other hand, the thickness tc of the cover portions 112 and 113 does not particularly need to be limited.

[0113] However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the thickness tc of the cover portions 112 and 113 can be 100 μm or less, preferably 30 μm or less, and in the case of ultra-small products, more preferably 20 μm or less.

[0114] Here, the thickness tc of the cover portions 112 and 113 can mean the size in the first direction of the cover portions 112 and 113. Further, the thickness tc of the cover portions 112 and 113 can mean the average thickness tc of the cover portions 112 and 113, and can mean the average size in the first direction of the cover portions 112 and 113.

[0115] The average size in the first direction of the cover portions 112 and 113 can be measured by scanning an image of the cross-section in the first and second directions of the main body 110 with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, it can mean the average value calculated by measuring the size in the first direction at 30 points equally spaced in the second direction in an image obtained by scanning one cover portion.

[0116] Also, the average size in the first direction of the cover portion measured by the method described above can have substantially the same size as the average size in the first direction of the cover portion in the cross-section in the first and third directions of the main body 110.

[0117] In one embodiment of the present invention, a structure in which the multilayer electronic component 100 has two external electrodes 131 and 132 is described. However, the number, shape, etc. of the external electrodes 131 and 132 can vary according to the form of the internal electrodes 121 and 122 and other purposes.

[0118] The external electrodes 131 and 132 are disposed on the main body 110 and can be connected to the internal electrodes 121 and 122.

[0119] More specifically, the external electrodes 131 and 132 can be respectively disposed on the third surface 3 and the fourth surface 4 of the main body 110, and can include a first external electrode 131 and a second external electrode 132 that are respectively connected to the first internal electrode 121 and the second internal electrode 122. That is, the first external electrode 131 can be disposed on the third surface 3 of the main body and can be connected to the first internal electrode 121, and the second external electrode 132 can be disposed on the fourth surface 4 of the main body and can be connected to the second internal electrode 122.

[0120] However, the external electrodes 131 and 132 do not have to be connected to the floating electrode 123.

[0121] In addition, the external electrodes 131 and 132 can be extended and disposed on a part of the first surface 1 and the second surface 2 of the main body 110, or can be extended and disposed on a part of the fifth surface 5 and the sixth surface 6 of the main body 110. That is, the first external electrode 131 can be disposed on a part of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110, and on the third surface 3 of the main body 110, and the second external electrode 132 can be disposed on a part of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110, and on the third surface 3 of the main body 110.

[0122] On the other hand, as long as the external electrodes 131 and 132 have electrical conductivity such as metal, they can be formed using any material, and a specific material can be determined in consideration of electrical characteristics, structural stability, etc., and can further have a multilayer structure.

[0123] For example, the external electrode can include an electrode layer disposed on the main body and a plating layer disposed on the electrode layer.

[0124] To give a more specific example of the electrode layer, the electrode layer can include a first electrode layer that is a fired electrode containing a first conductive metal and glass, and can include a second electrode layer that is a resin-based electrode containing a second conductive metal and resin.

[0125] Here, the first conductive metal can mean the conductive metal contained in the first electrode layer, and the second conductive metal can mean the conductive metal contained in the second electrode layer. At this time, the first conductive metal and the second conductive metal can be the same or different, and can contain the same metal substance, but are not particularly limited thereto.

[0126] Also, the electrode layers 131a, 132a, 131b, 132b can be in a form in which the first electrode layers 131a, 132a and the second electrode layers 131b, 132b are sequentially formed on the main body.

[0127] Also, the electrode layers 131a, 132a, 131b, 132b can be formed by a method of transferring a sheet containing a conductive metal onto the main body, or can be formed by a method of transferring a sheet containing a conductive metal onto a fired electrode.

[0128] A material excellent in electrical conductivity can be used as the conductive metal contained in the electrode layers 131a, 132a, 131b, 132b. For example, the conductive metal can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but is not particularly limited thereto.

[0129] In one embodiment of the present invention, the electrode layers 131a, 132a, 131b, 132b can have a two-layer structure including the first electrode layers 131a, 132a and the second electrode layers 131b, 132b. Thereby, the external electrodes 131, 132 can include the first electrode layers 131a, 132a containing a conductive metal and glass, and the second electrode layers 131b, 132b containing a conductive metal and resin, which are disposed on the first electrode layers 131a, 132a.

[0130] The first electrode layers 131a and 132a play a role in improving the bonding property with the main body 110 by including glass, and the second electrode layers 131b and 132b can play a role in improving the bending strength by including resin.

[0131] The conductive metal used for the first electrode layers 131a and 132a is not particularly limited as long as it can be electrically connected to the internal electrodes 121 and 122 for forming capacitance. For example, it can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. The first electrode layers 131a and 132a can be formed by applying a conductive paste provided by adding glass frit to the conductive metal particles and then firing.

[0132] The conductive metal included in the second electrode layers 131b and 132b can play a role in being electrically connected to the first electrode layers 131a and 132a.

[0133] The conductive metal included in the second electrode layers 131b and 132b is not particularly limited as long as it can be electrically connected to the electrode layers 131a and 132a, and can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0134] The conductive metal contained in the second electrode layers 131b and 132b can include one or more of spherical particles and flaky particles. That is, the conductive metal can consist only of flaky particles, can consist only of spherical particles, or may be in a form in which flaky particles and spherical particles are mixed. Here, the spherical particles can include forms that are not perfectly spherical. For example, it can include forms in which the ratio of the length of the major axis to the length of the minor axis (major axis / minor axis) is 1.45 or less. The flaky particles mean particles having a flat and long form and are not particularly limited. For example, the ratio of the length of the major axis to the length of the minor axis (major axis / minor axis) can be 1.95 or more. The lengths of the major axis and the minor axis of the above spherical particles and flaky particles can be measured from an image obtained by scanning the cross-sections in the first direction and the second direction cut at the central part in the third direction of the multilayer electronic component with a scanning electron microscope (SEM).

[0135] The resin contained in the second electrode layers 131b and 132b can play a role in ensuring bondability and absorbing shock. The resin contained in the second electrode layers 131b and 132b is not particularly limited as long as it has bondability and shock absorbability and can be mixed with conductive metal particles to form a paste. For example, it can include an epoxy resin.

[0136] Also, the second electrode layers 131b and 132b can include a plurality of metal particles, intermetallic compounds, and resin. By including the intermetallic compounds, the electrical connectivity with the first electrode layers 131a and 132a can be further improved. The intermetallic compounds can play a role in connecting a plurality of metal particles to improve electrical connectivity and can play a role in surrounding and connecting the plurality of metal particles to each other.

[0137] At this time, the above intermetallic compound can contain a metal having a melting point lower than the curing temperature of the resin. That is, since the above intermetallic compound contains a metal having a melting point lower than the curing temperature of the resin, the metal having a melting point lower than the curing temperature of the resin is melted in the process of undergoing the drying and curing steps, and forms a part of the metal particles and the intermetallic compound so as to surround the metal particles. At this time, the intermetallic compound can preferably contain a low melting point metal of 300 °C or lower.

[0138] For example, it can contain Sn having a melting point of 213 to 220 °C. In the process of undergoing the drying and curing steps, Sn is melted, and the melted Sn wets high melting point metal particles such as Ag, Ni or Cu by capillary action, and reacts with a part of the Ag, Ni or Cu metal particles to form Ag 3 Sn, Ni 3 Sn 4 , Cu 6 Sn 5 , Cu 3 intermetallic compounds such as Sn. Ag, Ni or Cu that do not participate in the reaction remain in the form of metal particles.

[0139] Therefore, the plurality of metal particles contain one or more of Ag, Ni and Cu, and the intermetallic compound contains Ag 3 Sn, Ni 3 Sn 4 , Cu 6 Sn 5 and Cu 3 one or more of Sn.

[0140] The plating layers 131c and 132c can play a role in improving the mounting characteristics.

[0141] The types of the plating layers 131c and 132c are not particularly limited, and can be single-layer plating layers 131c and 132c containing one or more of nickel (Ni), tin (Sn), palladium (Pd) and their alloys, and can be formed of a plurality of layers.

[0142] As a more specific example of the plating layers 131c and 132c, the plating layers 131c and 132c may be Ni plating layers or Sn plating layers, and may be in a form in which a Ni plating layer and a Sn plating layer are sequentially formed on an electrode layer, or in a form in which a Sn plating layer, a Ni plating layer and a Sn plating layer are sequentially formed. Also, the plating layers 131c and 132c may include a plurality of Ni plating layers and / or a plurality of Sn plating layers.

[0143] The size of the multilayer electronic component 100 does not need to be particularly limited.

[0144] However, in order to simultaneously achieve miniaturization and high capacity, it is necessary to reduce the thickness of the dielectric layers and internal electrodes and increase the number of layers, so the effects of the present invention can be more pronounced in a multilayer electronic component 100 having a size of 3216 (length x width: 3.2 mm x 1.6 mm) or less.

[0145] The present invention will be described in more detail with reference to the following examples. However, these examples are provided to aid in the understanding of the present invention and are not intended to limit the scope of the present invention.

[0146] (Example) Table 1 below shows the results of measuring the number of pores contained in the first dielectric layer or the second dielectric layer in Comparative Examples 1 and 2 which do not include a double internal electrode, and Examples 1 and 2 which include a double internal electrode.

[0147] In the case of Examples 1 and 2 in which double internal electrodes were applied, the first and second dielectric layers had the same composition, but in the case of the second dielectric layer, the thickness of the second dielectric layer was made thinner than the thickness of the first dielectric layer in order to improve the sinterability under the same firing conditions.

[0148] Comparative Example 1 and Example 1 were fabricated with the same structure (material and thickness) of the first dielectric layer and the internal electrodes as Examples 1 and 2, except for the presence or absence of the double internal electrodes.

[0149] Comparative Example 2 and Example 2 were fabricated with the same structure (material and thickness) of the first dielectric layer and the internal electrodes as those of Example 1 and Example 2, except for the application of the double internal electrodes.

[0150] Based on the cross-sections of the fired body in the first and second directions, after photographing the central region in the first direction of the body with a scanning electron microscope (SEM), the number of pores P observed from the photographed image was measured and described in Table 1, and 1,000 was multiplied by the number of pores P per unit area and described in Table 1.

[0151] On the other hand, Fig. 5a is an image obtained by photographing the central region in the first direction of the body with a scanning electron microscope (SEM) in Comparative Example 2, and Fig. 5b is an image obtained by photographing the central region in the first direction of the body with a scanning electron microscope (SEM) in Example 2.

[0152]

Table 1

[0153] The second dielectric layer of Example 1 to which the double internal electrodes were applied had 4.89 pores / μm × 1000 per unit area 2 which was less than or equal to 1 / 4 of 21.25 pores / μm × 1000 per unit area of the first dielectric layer of Example 1, 2 and it was found to be less than or equal to 1 / 4 of 20.84 pores / μm × 1000 per unit area of the first dielectric layer of Comparative Example 1 to which the double internal electrodes were not applied. 2 It can be seen that it is less than or equal to 1 / 4.

[0154] Also, the second dielectric layer of Example 2 to which the double internal electrodes were applied had 4.28 pores / μm × 1000 per unit area 2 which was less than or equal to 1 / 4 of 17.84 pores / μm × 1000 per unit area of the first dielectric layer of Example 2, 2 and it was found to be less than or equal to 1 / 4 of 17.87 pores / μm × 1000 per unit area of the first dielectric layer of Comparative Example 2 to which the double internal electrodes were not applied. 2 It can be seen that it is less than or equal to 1 / 4.

[0155] From this, it can be seen that the number of pores in the second dielectric layer is less than that in the first dielectric layer, and it can be predicted that crack generation is easier in the second dielectric layer than in the first dielectric layer. Thus, it can be predicted that it is possible to prevent crack generation in the first dielectric layer and not degrade the dielectric properties.

[0156] Table 2 below shows the values obtained by measuring the DC bias per unit thickness (1 μm) applied to the first dielectric layer and the rate of change in capacitance under a DC bias voltage when a voltage of 1000 V is applied, depending on the number of double internal electrodes applied.

[0157] Test Examples 1 to 4 correspond to sample chips to which double internal electrodes are applied, and the thickness of the second dielectric layer interposed between the double internal electrodes was made 10 μm.

[0158] [Table 2]

[0159] It can be confirmed that as the number of double internal electrodes decreases from 19, 13, 7, to 1 from Test Example 1 to Test Example 4, when the same external voltage (1000 V) is applied, the value of the DC bias applied per unit thickness gradually decreases to 6.25 V / μm, 6.01 V / μm, 5.79 V / μm, 5.59 V / μm. From this, it can be predicted that the electrostrictive stress applied to the first dielectric layer decreases.

[0160] And it can be confirmed that the rate of change in capacitance decreases to -34.9%, -32.9%, -31.2%, -29.5% from Test Example 1 to Test Example 4. From this, it can be seen that the capacitance characteristics of the multilayer electronic component are improved.

[0161] Next, the number of double internal electrodes or the thickness of the second dielectric layer was varied, and the breakdown voltage characteristics were measured. The chips were fabricated with a size of 3216 (length × width, 3.2 mm × 1.6 mm).

[0162] The breakdown voltage characteristics were evaluated based on the breakdown voltage (BDV). The higher the BDV value, the better the breakdown voltage characteristics were evaluated to be.

[0163] In Test Example 5, the number of double internal electrodes was 9, the thickness of the second dielectric layer was 10 μm, and the breakdown voltage (BDV) was measured to be 5.816 kV.

[0164] In Test Example 6, the number of double internal electrodes was 5, the thickness of the second dielectric layer was 20 μm, and the breakdown voltage (BDV) was measured to be 5.834 kV.

[0165] In Test Example 7, the number of double internal electrodes was 5, the thickness of the second dielectric layer was 10 μm, and the breakdown voltage (BDV) was measured to be 6.153 kV.

[0166] In Test Example 8, the number of double internal electrodes was 1, the thickness of the second dielectric layer was 10 μm, and the breakdown voltage (BDV) was measured to be 6.753 kV.

[0167] When comparing Test Examples 6 and 7, it was confirmed that the thinner the second dielectric layer, the better the breakdown voltage (BDV). This is predicted to be the result of the fact that the thinner the second dielectric layer, the thicker the first dielectric layer in chips of the same size.

[0168] When comparing Test Examples 5, 7, and 8, it was confirmed that the fewer the number of double internal electrodes, the better the breakdown voltage (BDV). This is predicted to be the result of the fact that the fewer the number of second dielectric layers, the thicker the first dielectric layer in chips of the same size.

[0169] Although the embodiments of the present invention have been described in detail above, the present invention is not limited by the above-described embodiments and the accompanying drawings, but is limited by the appended claims. Therefore, various forms of substitution, modification, and change can be made by those skilled in the art within the scope not departing from the technical idea of the present invention described in the claims, and this can also be said to belong to the scope of the present invention.

[0170] In addition, the expression "one embodiment" used in the present invention does not mean the same embodiment, but is provided to emphasize and explain each different unique feature. However, it does not exclude the possibility that the above-presented one embodiment can be realized in combination with the features of another one embodiment. For example, even if a matter described in a specific one embodiment is not described in another one embodiment, it can be understood as an explanation related to the other one embodiment as long as there is no explanation contrary to or conflicting with that matter in the other one embodiment.

[0171] The terms used in the present invention are merely used to explain one embodiment and are not intended to limit the present invention. At this time, the singular expression includes the plural expression unless the context clearly indicates a different meaning.

Description of Reference Numerals

[0172] 100: Multilayer Electronic Component 110: Body 111: Dielectric Layer 112, 113: Cover Portion 121, 122: Internal Electrodes 131, 132: External Electrodes

Claims

1. a body including a plurality of first dielectric layers, internal electrodes including first and second internal electrodes spaced apart from each other on the first dielectric layers, and floating electrodes alternately arranged with the internal electrodes in a first direction across the first dielectric layers; a first external electrode and a second external electrode disposed on the body and connected to the first internal electrode and the second internal electrode, respectively; The body includes a double internal electrode in which two layers of internal electrodes are arranged adjacent to each other in the first direction with a second dielectric layer interposed therebetween. Multilayer electronic components.

2. The double internal electrode is disposed at a central portion of the body in the first direction. The multilayer electronic component according to claim 1 .

3. The double internal electrode is one; The multilayer electronic component according to claim 1 .

4. The second dielectric layer has a different composition from the first dielectric layer. The multilayer electronic component according to claim 1 .

5. The second dielectric layer has a cross-section of 1 μm ２ The number of pores per unit area is B, the number of pores per unit area is B. ２ When the number of perforations is A, B < A is satisfied. The multilayer electronic component according to claim 1 .

6. The second dielectric layer has a cross-section of 1 μm ２ When the number of perforations is B, 1000×B≦5.00 is satisfied. The multilayer electronic component according to claim 1 .

7. When the average size of the first dielectric layer in the first direction is td1 and the average size of the second dielectric layer in the first direction is td2, td2<td1 is satisfied. The multilayer electronic component according to claim 1 .

8. 8×td2≦td1 is satisfied. The multilayer electronic component according to claim 7 .

9. a body including a plurality of first dielectric layers, internal electrodes including first and second internal electrodes spaced apart from each other on the first dielectric layers, and floating electrodes alternately arranged with the internal electrodes in a first direction across the first dielectric layers; a first external electrode and a second external electrode disposed on the body and connected to the first internal electrode and the second internal electrode, respectively; the body includes a double floating electrode in which two layers of floating electrodes are adjacently arranged in the first direction with a second dielectric layer interposed therebetween; Multilayer electronic components.

10. The double floating electrode is disposed at a center portion of the body in the first direction. The multilayer electronic component according to claim 9 .

11. The double floating electrode is one. The multilayer electronic component according to claim 9 .

12. The second dielectric layer has a different composition from the first dielectric layer. The multilayer electronic component according to claim 9 .

13. The second dielectric layer has a cross-section of 1 μm ２ The number of pores per unit area is B, the number of pores per unit area is B. ２ When the number of perforations is A, B < A is satisfied. The multilayer electronic component according to claim 9 .

14. The second dielectric layer has a cross-section of 1 μm ２ When the number of perforations is B, 1000×B≦5.00 is satisfied. The multilayer electronic component according to claim 9 .

15. When the average size of the first dielectric layer in the first direction is td1 and the average size of the second dielectric layer in the first direction is td2, td2<td1 is satisfied. The multilayer electronic component according to claim 9 .

16. 8×td2≦td1 is satisfied. The multilayer electronic component according to claim 15.

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