Multilayer electronic component

Abstract

To improve electrical connectivity between an internal electrode and an external electrode of a multilayer electronic component and suppress the penetration of external moisture and plating solution.SOLUTION: A multilayer electronic component includes: a body 110 that includes a dielectric layer 111 and internal electrodes 121, 122 alternately disposed with the dielectric layer in a first direction and that also includes first and second surfaces opposing each other in the first direction, third and fourth surfaces connected to the first and second surfaces and opposing each other in a second direction, and fifth and sixth surfaces connected to the first to fourth surfaces and opposing each other in a third direction; and external electrodes 131, 132 that include a connection portion disposed on the third and fourth surfaces, and a band portion in contact with the connection portion and disposed on a portion of the first and second surfaces. The external electrodes include: nickel electrode layers 131a, 132a connected to the internal electrodes and disposed on the connection portions; glass layers 131b, 132b disposed on the band portions; and copper electrode layers 131c, 132c disposed on the nickel electrode layers and the glass layers.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a multilayer electronic component.

Background Art

[0002] A multilayer ceramic capacitor (MLCC), which is one of multilayer electronic components, is a chip-shaped capacitor that is mounted on a printed circuit board of various electronic products such as video devices such as a liquid crystal display (LCD) and a plasma display panel (PDP), a computer, a smartphone, and a mobile phone, and serves to charge or discharge electricity.

[0003] Such a multilayer ceramic capacitor can be used as a component of various electronic devices due to its advantages of being small in size while ensuring high capacitance and being easy to mount. As various electronic devices such as computers and mobile devices are miniaturized and have increased output, the requirements for miniaturization and high capacitance of multilayer ceramic capacitors are increasing.

[0004] On the other hand, the internal electrodes of general multilayer electronic components mainly contain nickel, and the external electrodes mainly contain copper. Diffusion occurs between different metals to form an alloy. However, if copper diffuses excessively in the direction of nickel during the high-temperature heat treatment process, there is a risk of generating radiation cracks in the ceramic body.

[0005] In addition, glass is added to the external electrodes to improve the bonding force between the external electrodes and the ceramic body. However, if the glass is excessively arranged in the region where the internal electrodes and the external electrodes are connected, the electrical connectivity may decrease.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

SUMMARY OF THE INVENTION

PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] One of the various problems to be solved by the present invention is to suppress alloy formation between the internal electrode and the external electrode and prevent cracks from occurring in the ceramic body.

[0008] One of the various problems to be solved by the present invention is to improve the electrical connectivity between the internal electrode and the external electrode of the multilayer electronic component.

[0009] One of the various problems to be solved by the present invention is to improve the moisture resistance reliability by suppressing the penetration of moisture and plating solution from the outside.

[0010] However, the various problems to be solved by the present invention are not limited to the above-described content and can be more easily understood in the process of explaining the specific embodiments of the present invention.

MEANS FOR SOLVING THE PROBLEMS

[0011] A multilayer electronic component according to an embodiment of the present invention includes a dielectric layer and internal electrodes alternately arranged with the dielectric layer in a first direction, a first surface and a second surface facing each other in the first direction, a third surface and a fourth surface connected to the first surface and the second surface and facing each other in a second direction, a fifth surface and a sixth surface connected to the first surface, the second surface, the third surface and the fourth surface and facing each other in a third direction, a main body including the fifth surface and the sixth surface, a connection portion disposed on the third surface and the fourth surface, and an external electrode including a band portion in contact with the connection portion and disposed on a part of the first surface and the second surface. The external electrode is connected to the internal electrode and may include a nickel electrode layer disposed on the connection portion, a glass layer disposed on the band portion, and a copper electrode layer disposed on the nickel electrode layer and the glass layer.

[0012] A multilayer electronic component according to another embodiment of the present invention includes a dielectric layer and internal electrodes alternately arranged with the dielectric layer in a first direction, a first surface and a second surface facing each other in the first direction, a third surface and a fourth surface connected to the first surface and the second surface and facing each other in a second direction, a fifth surface and a sixth surface connected to the first surface, the second surface, the third surface and the fourth surface and facing each other in a third direction, a main body including them, a connection portion disposed on the third surface and the fourth surface, and an external electrode including a band portion in contact with the connection portion and disposed on a part of the first surface and the second surface. The external electrode is connected to the internal electrode and includes a first electrode layer disposed on the connection portion, a glass layer disposed on the band portion, and a second electrode layer disposed on the first electrode layer and the glass layer. The main component metal contained in the first electrode layer and the main component metal contained in the internal electrode can be the same.

Advantages of the Invention

[0013] One of the various effects of the present invention is to suppress the generation of cracks in the ceramic body and improve the reliability.

[0014] One of the various effects of the present invention is to improve the electrical connectivity between the internal electrode and the external electrode.

[0015] One of the various effects of the present invention is to suppress the penetration of moisture and plating solution from the outside and improve the moisture resistance reliability.

[0016] However, the diverse and meaningful advantages and effects of the present invention are not limited to the above-described content and can be more easily understood in the process of explaining the specific embodiments of the present invention.

Brief Description of the Drawings

[0017]

Figure 1

Figure 2

Figure 3

Figure 4

Embodiments for Carrying Out the Invention

[0018] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into several other forms, and the scope of the present invention is not limited to the embodiments described below. Also, the embodiments of the present invention are provided to more fully explain the present invention to an ordinary technician. Therefore, the shape and size of elements in the drawings may be enlarged, reduced (or emphasized or simplified) for clearer explanation, and elements denoted by the same reference numerals in the drawings are the same elements.

[0019] Note that, in order to clearly explain the present invention in the drawings, parts not related to the explanation are omitted, and the sizes and thicknesses of the illustrated components are arbitrarily shown for convenience of explanation, so the present invention is not necessarily limited by the illustration. Also, components having the same function within the scope of the same idea can be described using the same reference numerals. Further, throughout the specification, when a certain part "includes" a certain component, it means that other components can be further included, rather than excluding other components, unless otherwise stated to the contrary.

[0020] In the drawings, the first direction can be defined as the stacking direction or the thickness (T) direction, the second direction as the length (L) direction, and the third direction as the width (W) direction.

[0021] Stacked electronic component FIG. 1 schematically shows a perspective view of a multilayer electronic component according to an embodiment of the present invention, FIG. 2 schematically shows a cross-sectional view taken along line I-I' of FIG. 1, FIG. 3 schematically shows a cross-sectional view taken along line II-II' of FIG. 1, and FIG. 4 schematically shows a cross-sectional view taken along line I-I' of FIG. 1 in a multilayer electronic component according to another embodiment of the present invention.

[0022] Hereinafter, with reference to FIGS. 1 to 4, a multilayer electronic component according to an embodiment of the present invention will be described in detail. However, although a multilayer ceramic capacitor will be described as an example of the multilayer electronic component, the present invention can also be applied to various electronic products using a dielectric composition, such as an inductor, a piezoelectric element, a varistor, or a thermistor.

[0023] A multilayer electronic component 100 according to an embodiment of the present invention includes a dielectric layer 111 and internal electrodes 121 and 122 alternately arranged with the dielectric layer 111 in a first direction, a first surface 1 and a second surface 2 facing each other in the first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and facing each other in a second direction, and a fifth surface 5 and a sixth surface 6 connected to the first surface 1, the second surface 2, the third surface 3, and the fourth surface 4 and facing each other in a third direction, a main body 110 including them, a connection portion disposed on the third surface 3 and the fourth surface 4, and external electrodes 131 and 132 including a band portion in contact with the connection portion and disposed on a part of the first surface 1 and the second surface 2. The external electrodes 131 and 132 are connected to the internal electrodes 121 and 122, and may include nickel electrode layers 131a and 132a disposed in the connection portion, glass layers 131b and 132b disposed in the band portion, and copper electrode layers 131c and 132c disposed on the nickel electrode layers 131a, 132a and the glass layers 131b, 132b.

[0024] The main body 110 can have the dielectric layer 111 and the internal electrodes 121 and 122 alternately laminated.

[0025] More specifically, the main body 110 can include a capacitance forming portion Ac that is disposed inside the main body 110 and includes a first internal electrode 121 and a second internal electrode 122 that are alternately disposed so as to face each other with a dielectric layer 111 interposed therebetween to form a capacitance.

[0026] There is no particular limitation on the specific shape of the main body 110, but as shown in the figure, the main body 110 can be formed in a hexahedron shape or a shape similar thereto. Due to the shrinkage of the ceramic particles contained in the main body 110 during the firing process, the main body 110 is not a hexahedron having a perfect straight line, but can have a substantially hexahedron shape.

[0027] The main body 110 can have a first surface 1 and a second surface 2 that face each other in a first direction, a third surface 3 and a fourth surface 4 that are connected to the first surface 1 and the second surface 2 and face each other in a second direction, and a fifth surface 5 and a sixth surface 6 that are connected to the first surface 1, the second surface 2, the third surface 3, and the fourth surface 4 and face each other in a third direction.

[0028] The plurality of dielectric layers 111 forming the main body 110 are in a fired state, and the boundary between adjacent dielectric layers 111 can be integrated to the extent that it is difficult to confirm without using a scanning electron microscope (SEM).

[0029] The raw material for forming the dielectric layer 111 is not limited as long as sufficient capacitance can be obtained. Generally, perovskite (ABO 3 )-based materials can be used. For example, barium titanate-based materials, lead composite perovskite-based materials, or strontium titanate-based materials can be used. The barium titanate-based material can include BaTiO 3 -based ceramic particles. As examples of the ceramic particles, BaTiO 3 , BaTiO 3 in which Ca (calcium), Zr (zirconium), etc. are partially solid-solved (Ba 1-x Ca x )TiO 3 (0 < x < 1), Ba(Ti 1-y Ca y)O 3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O 3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O 3 (0 < y < 1), etc. can be mentioned.

[0030] Also, the raw material for forming the dielectric layer 111 can be various ceramic additives, organic solvents, binders, dispersants, etc. added to particles such as barium titanate (BaTiO 3 ) according to the purpose of the present invention.

[0031] The thickness td of the dielectric layer 111 does not particularly need to be limited.

[0032] However, in order to achieve a higher capacitance of the multilayer electronic component, the thickness of the dielectric layer 111 can be 3.0 μm or less. In order to more easily achieve miniaturization and higher capacitance of the multilayer electronic component, the thickness of the dielectric layer 111 can be 1.0 μm or less, preferably 0.6 μm or less, and more preferably 0.4 μm or less.

[0033] Here, the thickness td of the dielectric layer 111 can mean the thickness td of the dielectric layer 111 disposed between the first internal electrode 121 and the second internal electrode 122.

[0034] On the other hand, the thickness td of the dielectric layer 111 can mean the size of the dielectric layer 111 in the first direction. Note that the thickness td of the dielectric layer 111 can mean the average thickness td of the dielectric layer 111 and can mean the average size of the dielectric layer 111 in the first direction.

[0035] The average size of the dielectric layer 111 in the first direction can be measured by scanning an image of the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one dielectric layer 111 in the first direction can mean the average value calculated by measuring the size in the first direction at 30 equally spaced points in the second direction for one dielectric layer 111 in the scanned image. The 30 equally spaced points can be specified by the capacitance forming portion Ac. Also, when such average value measurement is extended to 10 dielectric layers 111 to measure the average value, the average size of the dielectric layer 111 in the first direction can be further generalized.

[0036] The internal electrodes 121 and 122 can be alternately laminated with the dielectric layer 111.

[0037] The internal electrodes 121 and 122 can include a first internal electrode 121 and a second internal electrode 122. The first internal electrode 121 and the second internal electrode 122 are alternately arranged so as to face each other with the dielectric layer 111 constituting the main body 110 interposed therebetween, and can be exposed to the third surface 3 and the fourth surface 4 of the main body 110, respectively.

[0038] More specifically, the first internal electrode 121 can be separated from the fourth surface 4 and exposed through the third surface 3, and the second internal electrode 122 can be separated from the third surface 3 and exposed through the fourth surface 4. A first external electrode 131 can be arranged on the third surface 3 of the main body 110 and connected to the first internal electrode 121, and a second external electrode 132 can be arranged on the fourth surface 4 of the main body 110 and connected to the second internal electrode 122.

[0039] That is, the first internal electrode 121 is not connected to the second external electrode 132, can be connected to the first external electrode 131, the second internal electrode 122 is not connected to the first external electrode 131, and can be connected to the second external electrode 132. At this time, the first internal electrode 121 and the second internal electrode 122 can be electrically separated from each other by the dielectric layer 111 arranged in the middle.

[0040] On the one hand, the main body 110 can be formed by alternately laminating a ceramic green sheet printed with a first internal electrode 121 and a ceramic green sheet printed with a second internal electrode 122, and then firing them.

[0041] The materials for forming the internal electrodes 121 and 122 are not particularly limited, and materials with excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 can include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0042] Also, the internal electrodes 121 and 122 can be formed by printing a conductive paste for internal electrodes containing one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof on a ceramic green sheet. As the printing method of the conductive paste for internal electrodes, a screen printing method or a gravure printing method can be used, etc., but the present invention is not limited thereto.

[0043] On the other hand, the thickness te of the internal electrodes 121 and 122 does not need to be particularly limited.

[0044] However, in order to achieve a higher capacitance of the multilayer electronic component, the thickness of the internal electrodes 121 and 122 can be 1.0 μm or less. In order to more easily achieve miniaturization and higher capacitance of the multilayer electronic component, the thickness of the internal electrodes 121 and 122 can be 0.6 μm or less, and more preferably 0.4 μm or less.

[0045] Here, the thickness te of the internal electrodes 121 and 122 can mean the size of the internal electrodes 121 and 122 in the first direction. Also, the thickness te of the internal electrodes 121 and 122 can mean the average thickness te of the internal electrodes 121 and 122, and can mean the average size of the internal electrodes 121 and 122 in the first direction.

[0046] The average size of the internal electrodes 121 and 122 in the first direction can be measured by scanning an image of the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one internal electrode in the first direction can be the average value calculated by measuring the size in the first direction at 30 equally spaced points in the second direction for one internal electrode in the scanned image. The 30 equally spaced points can be specified in the capacitance forming portion Ac. Further, when such average value measurement is extended to 10 internal electrodes to measure the average value, the average size of the internal electrodes in the first direction can be further generalized.

[0047] On the other hand, in one embodiment of the present invention, the average thickness td of at least one of the plurality of dielectric layers 111 and the average thickness te of at least one of the plurality of internal electrodes 121 and 122 can satisfy 2×te < td.

[0048] In other words, the average thickness td of one dielectric layer 111 can be even greater than twice the average thickness te of one of the internal electrodes 121 and 122. Preferably, the average thickness td of the plurality of dielectric layers 111 can be even greater than twice the average thickness te of the plurality of internal electrodes 121 and 122.

[0049] Generally, for electronic components for high-voltage electrical equipment, the main issue is the reliability problem due to the decrease in the breakdown voltage (BDV) in a high-voltage environment.

[0050] Therefore, in order to prevent the decrease in the breakdown voltage in a high-voltage environment, by making the average thickness td of the dielectric layer 111 even greater than twice the average thickness te of the internal electrodes 121 and 122, the thickness of the dielectric layer, which is the distance between the internal electrodes, can be increased, and the breakdown voltage characteristics can be improved.

[0051] When the average thickness td of the dielectric layer 111 is less than or equal to twice the average thickness te of the internal electrodes 121 and 122, the average thickness of the dielectric layer, which is the distance between the internal electrodes, is small, and the breakdown voltage may decrease, and there is a possibility of a short circuit occurring between the internal electrodes.

[0052] On the other hand, the main body 110 can include cover portions 112 and 113 disposed on both end surfaces in the first direction of the capacitance forming portion Ac.

[0053] Specifically, it can include a first cover portion 112 disposed on one surface of the capacitance forming portion Ac in the first direction and a second cover portion 113 disposed on the other surface of the capacitance forming portion Ac in the first direction. More specifically, it can include an upper cover portion 112 disposed on the upper portion of the capacitance forming portion Ac in the first direction and a lower cover portion 113 disposed on the lower portion of the capacitance forming portion Ac in the first direction.

[0054] The upper cover portion 112 and the lower cover portion 113 can be formed by laminating a single dielectric layer 111 or two or more dielectric layers 111 in the first direction on the upper and lower surfaces of the capacitance forming portion Ac, and can basically play a role of preventing damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0055] The upper cover portion 112 and the lower cover portion 113 do not include the internal electrodes 121 and 122 and can include the same material as the dielectric layer 111. That is, the upper cover portion 112 and the lower cover portion 113 can include a ceramic material, for example, a barium titanate (BaTiO 3 ) - based ceramic material.

[0056] On the other hand, the thickness tc of the cover portions 112 and 113 does not need to be particularly limited.

[0057] However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the thickness tc of the cover portions 112 and 113 can be 100 μm or less, preferably 30 μm or less, and more preferably 20 μm or less in ultra - small products.

[0058] Here, the thickness tc of the cover portions 112 and 113 can represent the size of the cover portions 112 and 113 in the first direction. Note that the thickness tc of the cover portions 112 and 113 can represent the average thickness tc of the cover portions 112 and 113, and can represent the average size of the cover portions 112 and 113 in the first direction.

[0059] The average size of the cover portions 112 and 113 in the first direction can be measured by scanning an image of the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, it can represent the average value calculated by measuring the size in the first direction at 30 equally spaced points in the second direction in the image of one scanned cover portion.

[0060] Note that the average size of the cover portion in the first direction measured by the above-described method can have substantially the same size as the average size of the cover portion in the first direction in the cross-section of the main body 110 in the first and third directions.

[0061] On the other hand, the stacked electronic component 100 can include side margin portions 114 and 115 disposed on both end-surfaces of the main body 110 in the third direction.

[0062] More specifically, the side margin portions 114 and 115 can include a first side margin portion 114 disposed on the fifth surface 5 of the main body 110 and a second side margin portion 115 disposed on the sixth surface 6 of the main body 110.

[0063] As shown in the figure, the side margin portions 114 and 115 can represent the region between the boundary surface of the main body 110 and the end-surfaces in the third direction of the first internal electrode 121 and the second internal electrode 122, based on the cross-section of the main body 110 in the first and third directions.

[0064] The side margin portions 114 and 115 are formed by applying a conductive paste to form the internal electrodes 121 and 122, except where the side margin portions 114 and 115 are formed on the ceramic green sheet applied to the capacitance forming portion Ac. In order to suppress the step difference caused by the internal electrodes 121 and 122, after cutting so that the internal electrodes 121 and 122 after lamination are exposed on the fifth surface 5 and the sixth surface 6 of the main body 110, the single dielectric layer 111 or two or more dielectric layers 111 can also be formed by laminating in the third direction on both end - surfaces in the third direction of the capacitance forming portion Ac.

[0065] The side margin portions 114 and 115 can basically play a role in preventing damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0066] The first side margin portion 114 and the second side margin portion 115 do not include the internal electrodes 121 and 122 and can contain the same material as the dielectric layer 111. That is, the first side margin portion 114 and the second side margin portion 115 can contain a ceramic material, for example, a barium titanate (BaTiO 3 ) - based ceramic material.

[0067] On the other hand, the width wm of the first side margin portion 114 and the second side margin portion 115 does not need to be particularly limited.

[0068] However, in order to more easily achieve miniaturization and high - capacitance of the multilayer electronic component 100, the width wm of the side margin portions 114 and 115 can be 100 μm or less, preferably 30 μm or less, and in the case of ultra - small products, more preferably 20 μm or less.

[0069] Here, the width wm of the side margin portions 114 and 115 can represent the size of the side margin portions 114 and 115 in the third direction. Also, the width wm of the side margin portions 114 and 115 can represent the average width wm of the side margin portions 114 and 115, and can represent the average size of the side margin portions 114 and 115 in the third direction.

[0070] The average size of the side margin portions 114 and 115 in the third direction can be measured by scanning an image of the cross-section of the main body 110 in the first and third directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, in an image obtained by scanning one side margin portion, it can represent the average value calculated by measuring the size in the third direction at 10 equally spaced points in the first direction.

[0071] In one embodiment of the present invention, a structure in which the ceramic electronic component 100 has two external electrodes 131 and 132 is described. However, the number, shape, etc. of the external electrodes 131 and 132 can be changed according to the form of the internal electrodes 121 and 122 and other purposes.

[0072] The external electrodes 131 and 132 can be disposed on the main body 110 and connected to the internal electrodes 121 and 122.

[0073] More specifically, the external electrodes 131 and 132 can be respectively disposed on the third surface 3 and the fourth surface 4 of the main body 110, and can include a first external electrode 131 and a second external electrode 132 respectively connected to the first internal electrode 121 and the second internal electrode 122. That is, the first external electrode 131 can be disposed on the third surface 3 of the main body and connected to the first internal electrode 121, and the second external electrode 132 can be disposed on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0074] Furthermore, the external electrodes 131 and 132 can be arranged to extend over a part on the first surface 1 and the second surface 2 of the main body 110, or can be arranged to extend over a part on the fifth surface 5 and the sixth surface 6 of the main body 110. That is, the first external electrode 131 can be arranged on a part of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110, and on the third surface 3 of the main body 110, and the second external electrode 132 can be arranged on a part of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110, and on the third surface 3 of the main body 110.

[0075] More specifically, the external electrodes 131 and 132 can include a connection part arranged on the third surface 3 and the fourth surface 4, and a band part that is in contact with the connection part and is arranged on a part of the first surface 1 and the second surface 2.

[0076] On the other hand, as long as the external electrodes 131 and 132 have electrical conductivity such as metal, they can be formed using any material. Considering electrical characteristics, structural stability, etc., a specific material can be determined, and furthermore, they can have a multilayer structure.

[0077] In one embodiment of the present invention, the external electrodes 131 and 132 are connected to the internal electrodes 121 and 122, and include a first electrode layer 131a and 132a arranged at a connection part in a region in contact with the third surface 3 and the fourth surface 4 of the main body 110, a glass layer 131b and 132b arranged at a band part in a region in contact with the connection part and in contact with a part of the first surface 1 and the second surface 2 of the main body 110, and a second electrode layer 131c and 132c arranged on the first electrode layer 131a, 132a and the glass layer 131b, 132b. The main component metal included in the first electrode layer 131a, 132a can be the same as the main component metal included in the internal electrodes 121 and 122.

[0078] In the present invention, as an example of a more specific method for measuring the content of elements contained in each component of the multilayer electronic component 100, in the case of the destructive method, the components can be analyzed using the energy dispersive X-ray spectroscopy (EDS) mode of a scanning electron microscope (SEM), the EDS mode of a transmission electron microscope (TEM), or the EDS mode of a scanning transmission electron microscope (STEM). First, a thin analysis sample is prepared using a focused ion beam (FIB) equipment in the region to be measured. Then, the damaged layer on the surface of the thinned sample is removed using xenon (Xe) or argon (Ar) ion milling, and thereafter, each component to be measured is mapped in the image obtained using SEM-EDS, TEM-EDS, or STEM-EDS for qualitative / quantitative analysis. In this case, the qualitative / quantitative analysis graph of each component can also be expressed in terms of the mass percentage (wt%), atomic percentage (at%), or molar percentage (mol%) of each element. At this time, the molar number of one specific component relative to the molar number of another specific component can be converted and expressed.

[0079] As another method, the chip is pulverized to select the region to be measured, and the components in the selected region containing the dielectric microstructure can be analyzed using an apparatus such as an inductively coupled plasma optical emission spectrometer (ICP-OES) or an inductively coupled plasma mass spectrometer (ICP-MS).

[0080] In the present invention, the "main component" can be meant to be a component that occupies a relatively large weight or atomic percentage compared to other components, and can be meant to be a component of 50 wt% or more based on the weight of the entire composition or the entire external electrode, or a component of 50 at% or more based on the atomic percentage.

[0081] When the main component metals of the internal electrodes 121 and 122 are the same as those of the external electrodes 131 and 132, particularly the main component metals of the first electrode layers 131a and 132a, alloy formation due to mutual diffusion cannot occur during the high-temperature heat treatment process, and generation of radiation cracks (cracks) due to the main component metals of the first electrode layers 131a and 132a diffusing into the internal electrodes 121 and 122 can be suppressed. Therefore, the reliability and lifespan of the multilayer electronic component 100 can be improved.

[0082] For example, the internal electrodes 121 and 122 can have nickel (Ni) as the main component metal, and the first electrode layers 131a and 132a can be nickel electrode layers 131a and 132a with nickel (Ni) as the main component metal, but it is not particularly limited thereto. For example, as described above, the internal electrodes 121 and 122 can be any material as long as it has excellent electrical conductivity. Specifically, it can include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. And the main component metal of the first electrode layers 131a and 132a can include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0083] The first electrode layers 131a and 132a can be arranged at the connection part and can include a first conductive metal and glass.

[0084] More specifically, the first external electrode 131 can include a first electrode layer 131a arranged at the connection part of the third surface, and the first electrode layer 131a of the first external electrode can include a first conductive metal and glass. The second external electrode 132 can include a first electrode layer 132a arranged at the connection part of the fourth surface, and the first electrode layer 132a of the second external electrode can include a first conductive metal and glass.

[0085] That is, the first electrode layers 131a and 132a can be formed by applying a conductive paste containing a first conductive metal and glass to the positions of the connection portions in the regions where the third surface 3 and the fourth surface 4 of the main body 110 are in contact, and then firing.

[0086] As described above, the first conductive metal can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but is not particularly limited thereto.

[0087] The first electrode layers 131a and 132a can contain glass, and the type of glass is not particularly limited. The glass contained in the first electrode layers 131a and 132a can play a role in improving the bonding property with the main body 110.

[0088] However, by disposing the glass layers 131b and 132b in the band portions of the external electrodes 131 and 132, the bonding property between the glass layers 131b and 132b and the main body 110 can be excellent.

[0089] That is, by disposing the glass layers 131b and 132b in the band portions, the bonding property between the main body 110 and the second electrode layers 131c and 132c can be improved, and the delamination between the main body 110 and the external electrodes 131 and 132 can be further suppressed from occurring.

[0090] Also, by disposing the glass layers 131b and 132b in the adjacent regions at the ends of the external electrodes 131 and 132, which serve as the penetration paths for moisture from the outside, among the bonding interfaces between the external electrodes 131 and 132 and the main body 110, the penetration of moisture and plating solution can be suppressed, and the moisture resistance reliability can also be improved.

[0091] The glass layers 131b and 132b can be disposed in the band portions and can contain glass.

[0092] More specifically, the first external electrode 131 can include a glass layer 131b disposed in the band portion, and the glass layer 131b of the first external electrode can include a first glass layer 131b-1 disposed on a part of the first surface 1 and a second glass layer 131b-2 disposed on a part of the second surface 2.

[0093] The second external electrode 132 can include a glass layer 132b disposed in the band portion, and the glass layer 132b of the second external electrode can include a first glass layer 132b-1 disposed on a part of the first surface 1 and a second glass layer 132b-2 disposed on a part of the second surface 2.

[0094] Here, the glass included in the glass layers 131b and 132b can include, for example, borosilicate glass, and the glass layers 131b and 132b can further include at least one of sodium (Na, also called sodium in other nomenclatures), barium (Ba), zinc (Zn), calcium (Ca), iron (Fe), and tin (Sn). Here, the main component of the glass layer can be glass, for example, borosilicate glass can be the main component.

[0095] Borosilicate glass is a type of low-melting glass, and by further including at least one of Na, Ba, Zn, Ca, Fe, and Sn, the melting point can be further lowered. Therefore, the formation of the glass layers 131b and 132b can be further promoted, and the shape of the glass layers 131b and 132b can be more easily controlled during the manufacturing process.

[0096] The method for forming the glass layers 131b and 132b is not particularly limited. However, after forming the first electrode layers 131a and 132a disposed at the connection portion, a conductive paste containing a second conductive metal and glass is applied on the first electrode layers 131a and 132a, and the glass layers 131b and 132b can be formed by applying a conductive paste containing a second conductive metal and glass to the band portion. Here, the conductive paste containing a second conductive metal and glass can form the second electrode layers 131c and 132c described later.

[0097] At this time, when the glass for forming the second electrode layers 131c and 132c is used as a low melting point glass such as borosilicate glass, glass layers 131b and 132b can be formed at the positions of the band portions in contact with the main body 110 except for the connection portions where the first electrode layers 131a and 132a are formed. That is, in the firing process of the conductive paste containing the second conductive metal and glass, since the wettability of the glass is higher than that of the main body with respect to the first electrode layers 131a and 132a, the glass gathers at the band portions, and the glass layers 131b and 132b can be formed.

[0098] The glass layers 131b and 132b disposed in the band portions are preferably formed in a layer shape along the surface of the main body, but are not particularly limited thereto, and can have a convex shape and can also be disposed so as to cover the corners of the main body 110. Here, the corners of the main body can be in the vicinity of the region where the first and second surfaces of the main body are in contact with the third and fourth surfaces of the main body, and can mean the corner bending regions with reference to the drawings. On the other hand, the shapes of the glass layers 131b and 132b can vary depending on the size of the multilayer electronic component, the length and width of the band portions, and can be diverse depending on the glass content (wt%) in the conductive paste containing the second conductive metal and glass.

[0099] On the other hand, referring to FIG. 2, for example, the glass layers 131b and 132b can be in contact with the first electrode layers 131a and 132a disposed in the connection portions and extend from the first electrode layers 131a and 132a and be disposed in the band portions. At this time, the glass layers 131b and 132b can be disposed so as to be in contact with the main body 110 including the corners of the main body 110 as described above, but are not particularly limited thereto.

[0100] Referring to FIG. 4, which is another embodiment, the glass layers 231b and 232b can be arranged not to be between the extension line EL1 of the first surface and the extension line EL2 of the second surface.

[0101] More specifically, the first glass layer 231b-1 of the first external electrode is arranged only at the lower part with respect to EL1 and cannot be arranged above EL1. The second glass layer 231b-2 of the first external electrode is arranged only at the upper part with respect to EL2 and cannot be arranged below EL2. That is, the glass layer 231b of the first external electrode cannot be arranged between EL1 and EL2 in the first direction and cannot be arranged on the third surface 3.

[0102] The first glass layer 232b-1 of the second external electrode is arranged only at the lower part with respect to EL1 and cannot be arranged above EL1. The second glass layer 232b-2 of the first external electrode is arranged only at the upper part with respect to EL2 and cannot be arranged below EL2. That is, the glass layer 232b of the second external electrode cannot be arranged between EL1 and EL2 in the first direction and cannot be arranged on the fourth surface 4.

[0103] As a result, the glass layers 231b and 232b cannot be arranged between EL1 and EL2 and cannot be arranged on the third surface 3 and the fourth surface 4.

[0104] The external electrodes 131 and 132 can include the first electrode layers 131a and 132a and the second electrode layers 131c and 132c arranged on the glass layers 131b and 132b. The second electrode layers 131c and 132c can include a second conductive metal and glass.

[0105] The second conductive metal can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but is not particularly limited thereto.

[0106] The second conductive metal contained in the second electrode layers 131c and 132c can be different from the first conductive metal contained in the first electrode layers 131a and 132a, but is not particularly limited thereto. The first conductive metal and the second conductive metal can be the same, and when a plurality of conductive metals are included, at least one of the conductive metals can be the same.

[0107] Even when the first conductive metal and the second conductive metal are different, an alloy may not be formed between the first conductive metal and the second conductive metal. This is because the metal contained in the first electrode layers 131a and 132a is oxidized during the firing process of the first electrode layers 131a and 132a, so that an oxide of the metal of the first electrode layers 131a and 132a can be formed on the surfaces of the first electrode layers 131a and 132a. Corresponding to the interface between the first electrode layers 131a and 132a and the second electrode layers 131c and 132c, an oxide of the metal of the first electrode layers 131a and 132a can be disposed between the first electrode layers 131a and 132a and the second electrode layers 131c and 132c.

[0108] For example, when the main component of the first conductive metal of the first electrode layers 131a and 132a is nickel (Ni) and the main component of the second conductive metal of the second electrode layers 131c and 132c is copper (Cu), when the first electrode layers 131a and 132a are first fired and formed, an oxide layer, for example, a nickel (Ni) oxide layer, can be formed on the surfaces of the first electrode layers 131a and 132a, and the second electrode layers 131c and 132c can be disposed on the nickel (Ni) oxide layer. That is, a nickel (Ni) oxide layer can be formed between the first electrode layers 131a and 132a and the second electrode layers 131c and 132c. Thereby, nickel (Ni) of the first electrode layers 131a and 132a and copper (Cu) of the second electrode layers 131c and 132c may not react, and a Cu-Ni alloy layer may not be formed between the first electrode layers 131a and 132a and the second electrode layers 131c and 132c, but is not particularly limited thereto.

[0109] The glass contained in the second electrode layers 131c and 132c is not particularly limited, but can include borosilicate glass and can be the same as the glass contained in the glass layers 131b and 132b.

[0110] Here, the glass contained in the second electrode layers 131c and 132c can further contain at least one of sodium (Na), barium (Ba), zinc (Zn), calcium (Ca), iron (Fe), and tin (Sn).

[0111] Borosilicate glass is a type of low melting point glass, and the melting point can be further lowered by further containing at least one of Na, Ba, Zn, Ca, Fe, and Sn.

[0112] The method for forming the second electrode layers 131c and 132c is not particularly limited. After applying the first electrode layers 131a and 132a disposed at the connection portion, a conductive paste containing a second conductive metal and glass can be applied on the first electrode layers 131a and 132a to form them. Here, the glass can form the above-described glass layers 131b and 132b, and the conductive paste containing the second conductive metal and glass can become the second electrode layers 131c and 132c disposed on the first electrode layers 131a, 132a, and the glass layers 131b and 132b.

[0113] On the other hand, the content of the glass contained in the second electrode layers 131c and 132c can be 8 wt% or more and 25 wt% or less.

[0114] The method for measuring the glass content contained in the second electrode layers 131c and 132c is not particularly limited. However, among the cross-sections in the first direction and the second direction with respect to the center of the laminated electronic component 100 in the third direction, the regions of the second electrode layers 131c and 132c can be measured using a scanning electron microscope (SEM) or a transmission electron microscope (TEM). For example, among the cross-sections of the second electrode layers 131c and 132c, the content of the elements contained in the region where glass is observed with respect to the total content of the elements contained in a 10 μm × 10 μm region can be measured and obtained. Here, the glass can mean a region where a high content of silicon (Si) is observed, or a region of a second-phase containing silicon (Si).

[0115] The external electrodes 131 and 132 can include plating layers 131c, 132c, 131d, and 132d disposed on the second electrode layers 131c and 132c.

[0116] The plating layers 131c, 132c, 131d, and 132d can play a role in improving the mounting characteristics.

[0117] The types of the plating layers 131c, 132c, 131d, and 132d are not particularly limited. In the drawings, they are shown as plating layers of two layers, but they can be a single plating layer or two or more plating layers. For example, they can be a single-layer plating layer containing one or more of nickel (Ni), tin (Sn), palladium (Pd), and their alloys, and can be formed from a plurality of layers.

[0118] As a more specific example of the plating layers 131c, 132c, 131d, and 132d, the plating layers 131c, 132c, 131d, and 132d may be Ni plating layers or Sn plating layers, and may be in a form in which a Ni plating layer and a Sn plating layer are sequentially formed on the second electrode layers 131c and 132c, or in a form in which a Sn plating layer, a Ni plating layer, and a Sn plating layer are sequentially formed. Also, the plating layers may include a plurality of Ni plating layers and / or a plurality of Sn plating layers.

[0119] The size of the multilayer electronic component 100 does not need to be particularly limited.

[0120] However, in order to simultaneously achieve miniaturization and high capacity, the thickness of the dielectric layers and internal electrodes must be reduced and the number of layers must be increased, so the effects of the present invention can be more pronounced in a multilayer electronic component 100 having a size of 1005 (length x width: 1.0 mm x 0.5 mm) or less.

[0121] Although the embodiments of the present invention have been described in detail above, the present invention is not limited to the above-described embodiments and the accompanying drawings, but is limited by the scope of the accompanying claims. Therefore, various substitutions, modifications, and changes can be made by a person having ordinary knowledge in the art within the scope of the technical idea of ​​the present invention described in the claims, and these also belong to the scope of the present invention.

[0122] In addition, the expression "one embodiment" used in the present disclosure does not mean the same embodiment, but is provided to emphasize and describe each unique feature that is different from the others. However, the above-mentioned one embodiment does not exclude being realized in combination with the features of another embodiment. For example, even if a matter described in a specific embodiment is not described in another embodiment, it can be understood as a description related to the other embodiment, unless there is a description that is opposite or contradictory to the matter in the other embodiment.

[0123] The terms used in this disclosure are merely used to describe an embodiment and are not intended to limit this disclosure. At this time, the singular expressions include plural expressions unless the context clearly indicates otherwise.

Explanation of Signs

[0124] 100 Multilayer electronic component 110 Body 111 Dielectric layer 112, 113 Cover part 114, 115 Side margin part 121, 122 Internal electrode 131, 132 External electrode

Claims

1. a body including dielectric layers and internal electrodes alternately disposed with the dielectric layers in a first direction, the body including first and second surfaces facing each other in the first direction, third and fourth surfaces connected to the first and second surfaces and facing each other in the second direction, and fifth and sixth surfaces connected to the first, second, third and fourth surfaces and facing each other in the third direction; an external electrode including a connection portion disposed on the third surface and the fourth surface, and a band portion disposed on a part of the first surface and the second surface in contact with the connection portion, The external electrode is connected to the internal electrode, and includes a nickel electrode layer disposed on the connection portion, a glass layer disposed on the band portion, and a copper electrode layer disposed on the nickel electrode layer and the glass layer.

2. 2. The multilayer electronic component according to claim 1, wherein the internal electrodes contain nickel.

3. 10. The laminated electronic component of claim 1, wherein the glass layer comprises borosilicate glass.

4. 4. The multilayer electronic component according to claim 3, wherein the glass layer is mainly composed of borosilicate glass.

5. 4. The laminated electronic component of claim 3, wherein the glass layer further comprises at least one of sodium, barium, zinc, calcium, iron, and tin.

6. The multilayer electronic component according to claim 1 , wherein the glass layer is not disposed between an extension line EL1 of the first surface and an extension line EL2 of the second surface.

7. 2. The multilayer electronic component according to claim 1, wherein a nickel oxide layer is disposed between the nickel electrode layer and the copper electrode layer.

8. The laminated electronic component according to claim 1 , wherein the copper electrode layers comprise glass.

9. The multilayer electronic component according to claim 8 , wherein the glass included in the copper electrode layer is the same as the glass included in the glass layer.

10. The multilayer electronic component according to claim 9 , wherein the glass included in the copper electrode layer includes borosilicate glass.

11. The multilayer electronic component according to claim 10 , wherein the glass included in the copper electrode layer further contains at least one of sodium, barium, zinc, calcium, iron, and tin.

12. 9. The multilayer electronic component according to claim 8, wherein the content of glass in the copper electrode layers is 8 wt % or more and 25 wt % or less.

13. The multilayer electronic component according to claim 1 , wherein the external electrodes further include a plating layer disposed on the copper electrode layer.

14. The multilayer electronic component according to claim 13 , wherein the plating layers include a first plating layer disposed on the copper electrode layer, and a second plating layer disposed on the first plating layer.

15. a body including dielectric layers and internal electrodes alternately disposed with the dielectric layers in a first direction, the body including first and second surfaces facing each other in the first direction, third and fourth surfaces connected to the first and second surfaces and facing each other in the second direction, and fifth and sixth surfaces connected to the first, second, third and fourth surfaces and facing each other in the third direction; an external electrode including a connection portion disposed on the third surface and the fourth surface, and a band portion disposed on a part of the first surface and the second surface in contact with the connection portion, the external electrode includes a first electrode layer connected to the internal electrode and disposed in the connection portion, a glass layer disposed in the band portion, and a second electrode layer disposed on the first electrode layer and the glass layer, A multilayer electronic component, wherein a main component metal contained in the first electrode layer is the same as a main component metal contained in the internal electrodes.

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