Organic semiconductor device

Abstract

To provide an organic semiconductor device capable of suppressing the deterioration caused by moisture and the like.SOLUTION: An organic semiconductor device 100 includes: a first substrate 1 and a second substrate 2, one face of the first substrate facing one face of the second substrate, the first substrate and the second substrate arranged spaced apart from each other; and a sealing material 3 arranged between the first substrate and the second substrate and provided to surround a space defined between the first substrate and the second substrate. On the one face side of the first substrate in the space, at least one element configured to include an organic semiconductor film is provided. On the one face side of the second substrate in the space, at least one second element is provided.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to an organic semiconductor device.

Background Art

[0002] Japanese Patent Application Laid-Open No. 2023-030471 (Patent Document 1) describes a detection device having a substrate, a plurality of photodiodes provided on the substrate, a plurality of transistors provided corresponding to each of the plurality of photodiodes, a plurality of gate lines extending in a first direction, a plurality of signal lines extending in a second direction intersecting the first direction, a plurality of lower electrodes provided between the transistors and the photodiodes in a direction perpendicular to the substrate and provided corresponding to each of the plurality of photodiodes, an upper electrode provided across the plurality of photodiodes, and a reflective layer provided between the substrate and the photodiodes in a direction perpendicular to the substrate.

[0003] Since the above-described detection device has a structure in which photodiodes and transistors are provided on the same substrate, surface treatment such as a passivation film covering the substrate is required in actual productization. However, for example, when photodiodes and transistors are formed using organic materials, they are likely to be deteriorated by moisture and oxygen, but it is considered difficult for the above passivation film to suppress the intrusion of moisture and oxygen from the outside.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] One of the objects of the specific aspect according to the present disclosure is to provide an organic semiconductor device capable of suppressing deterioration due to moisture or the like.

Means for Solving the Problem

[0006] An organic semiconductor device according to one aspect of the present disclosure includes a first substrate and a second substrate, each having one surface facing each other and being arranged with a space therebetween, a sealing material disposed between the first substrate and the second substrate and provided so as to surround a space defined between the first substrate and the second substrate, and includes at least one first element including an organic semiconductor film is provided on one surface side of the first substrate within the space, and at least one second element is provided on one surface side of the second substrate within the space. It is an organic semiconductor device.

[0007] According to the above configuration, an organic semiconductor device capable of suppressing deterioration due to moisture or the like can be provided.

Brief Description of the Drawings

[0008]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Mode for Carrying Out the Invention

[0009] (First Embodiment) FIG. 1 is a schematic cross-sectional view showing the configuration of the organic semiconductor device of the first embodiment. The organic semiconductor device 100 of the first embodiment includes a thin film transistor (first element) and a photodiode (second element) that detects light, and each of the photodiode and the thin film transistor is configured using an organic material. The thin film transistor includes a gate electrode 10, an insulating film 11, source / drain electrodes 12 and 13, and an organic semiconductor film 14 (the portion indicated by the dotted ellipse in the figure). The photodiode includes a transparent electrode 15, an active layer 16, and an electrode 17.

[0010] The first substrate 1 is, for example, a glass substrate or a resin substrate. The first substrate 1 may be configured in a film shape, for example. The first substrate 1 may be a transparent substrate or a non-transparent substrate. The thin film transistor described above is provided on one surface (the surface facing the second substrate 2) of the first substrate 1. Therefore, as the first substrate 1, a substrate having heat resistance sufficient to withstand the temperature in at least the manufacturing process of the thin film transistor is used.

[0011] The second substrate 2 is, for example, a film-shaped resin substrate. As the second substrate 2 of the present embodiment, a substrate having a thinner thickness than the first substrate 1 is used. The photodiode described above is provided on one surface (the surface facing the first substrate 1) of the second substrate 2. Therefore, as the second substrate 2, a substrate having heat resistance sufficient to withstand the temperature in at least the manufacturing process of the photodiode is used. Further, in the present embodiment, since light is incident on the photodiode through the second substrate 2, as the second substrate 2, a substrate having a high transmittance at least with respect to the wavelength of the light to be detected is used. By forming the first substrate 1 and the second substrate 2 into thin film shapes, a flexible organic semiconductor device can be provided.

[0012] The sealing material 3 is provided so as to surround the above-described photodiode and thin-film transistor between one surface of each of the first substrate 1 and the second substrate. The sealing material 3 contains a spacer for maintaining a constant interval (for example, several μm) between one surface of each of the first substrate 1 and the second substrate 2. The space 20 between the first substrate 1 and the second substrate, that is, the space 20 including the photodiode and the thin-film transistor is sealed from the outside by the first substrate 1, the second substrate 2, and this sealing material 3. As the sealing material 3, for example, a sealing material composed of a photocurable or thermosetting epoxy resin similar to that used for liquid crystal elements can be used.

[0013] The gate electrode 10 is an electrode for functioning as a gate of the thin-film transistor and is provided on one surface of the first substrate 1. The length and width of the gate electrode 10 can be appropriately set according to the performance required for the thin-film transistor. The gate electrode 10 can be obtained, for example, by patterning a transparent conductive film such as an ITO (indium tin oxide) film or a metal film such as gold into a predetermined shape. Also, although not shown, wirings are appropriately connected to the gate electrode 10.

[0014] The insulating film 11 is provided to cover the gate electrode 10 on one surface of the first substrate 1. This insulating film 11 is an insulating film for functioning as a gate insulating film of the thin-film transistor, and may be, for example, an insulating film formed using an organic material, or may be an insulating film formed using an inorganic material such as SiN or SiO 2 etc. The relative permittivity, film thickness, etc. of the insulating film 11 can be appropriately set according to the performance required for the thin-film transistor. When the insulating film 11 is formed using an organic material, it can be formed, for example, by applying an organic material on one surface of the first substrate 1 and drying it. Also, when the insulating film 11 is formed using an inorganic material, it can be formed, for example, using a film-forming method such as sputtering or CVD.

[0015] The source / drain electrodes 12 and 13 are provided on one surface of the insulating film 11 (the surface facing the second substrate 2), and a part of each is provided so as to overlap the gate electrode 10 in a plan view. A gap is provided between the source / drain electrode 12 and the source / drain electrode 13. This gap is disposed at a position that overlaps the gate electrode 10 in a plan view. The source / drain electrodes 12 and 13 are electrodes for functioning as the source / drain of the thin-film transistor. The source / drain electrodes 12 and 13 can be obtained, for example, by patterning a transparent conductive film such as an ITO (indium tin oxide) film or a metal film such as gold into a predetermined shape. Also, although not shown, wirings are appropriately connected to the source / drain electrodes 12 and 13.

[0016] The organic semiconductor film 14 is provided at a position that overlaps the gate electrode 10 in a plan view and is in contact with each of the source / drain electrodes 12 and 13. The organic semiconductor film 14 can be formed, for example, by applying an organic semiconductor material by a coating method such as an inkjet method. The film thickness, mobility, etc. of the organic semiconductor film 14 can be appropriately set according to the performance required for the thin-film transistor. Also, as shown in FIG. 2 to be described later, a protective film 19 that covers the organic semiconductor film 14 may be provided.

[0017] The transparent electrode 15 is provided on one surface of the second substrate 2. The transparent electrode 15 can be obtained, for example, by patterning a transparent conductive film such as an ITO (indium tin oxide) film into a predetermined shape. Also, although not shown, wirings are appropriately connected to the transparent electrode 15.

[0018] The active layer 16 is provided between the transparent electrode 15 and the electrode 17. This active layer 16 is a layer for generating an electromotive force by light incident from the outside through the second substrate 2 and the transparent electrode 15. Although the description is omitted here, functional layers such as a carrier injection layer, a carrier blocking layer, and a transport layer may be appropriately provided between the active layer 16 and the transparent electrode 15 and between the active layer 16 and the electrode 17.

[0019] The electrode 17 is provided at a position facing the transparent electrode 15 with the active layer 16 interposed therebetween. The electrode 17 can be obtained by patterning a metal film such as an aluminum film.

[0020] The conductive material 18 is provided between one surface of each of the first substrate 1 and the second substrate 2 so as to be in contact with the source / drain electrode 13 of the thin film transistor and the electrode 17 of the photodiode, respectively. As the conductive material 18, for example, a material such as silver paste can be used. Further, as the conductive material 18, for example, a resin containing a gap material (microspheres) coated with gold may be used, or an anisotropic conductive adhesive film may be used. By interposing the conductive material 18 between the source / drain electrode 13 and the electrode 17, the thin film transistor provided on the first substrate 1 and the photodiode provided on the second substrate 2 are electrically and physically connected.

[0021] The organic semiconductor device 100 of the first embodiment has the above configuration, and its operation will be described next. Light incident from the outside is detected by the photodiode provided on the second substrate 2. At this time, by applying a predetermined voltage to the gate electrode 10 of the thin film transistor provided on the first substrate 1, conduction is established between the source / drain electrodes 12 and 13, and the photocurrent from the photodiode can be output to the outside. Various information can be obtained by observing the output waveform of this photocurrent.

[0022] In FIG. 1, a pair of one thin film transistor and one photodiode is shown for simplicity of explanation. However, a plurality of thin film transistors and photodiodes may be provided between the first substrate 1 and the second substrate 2. In this case, for example, by arranging each thin film transistor and photodiode in a matrix in a plan view, planar optical information (temporal change) can be obtained. Regarding the wiring for each thin film transistor and photodiode in this case, it may be arranged as appropriate. For example, a plurality of gate wirings and a plurality of data wirings are arranged orthogonally, and each thin film transistor and photodiode are arranged and connected in correspondence with each intersection thereof, and a configuration for driving each thin film transistor (active matrix driving) is preferably adopted.

[0023] Also, in the organic semiconductor device 100 of the first embodiment, the thin film transistor and the photodiode were provided at positions where they overlap in a plan view, but they may be provided at positions where they do not overlap in a plan view. However, considering the area efficiency in the case of providing a plurality of photodiodes, the former arrangement (the arrangement where the thin film transistor and the photodiode overlap in a plan view) is more preferable. The same applies to each of the embodiments described below.

[0024] Also, in the organic semiconductor device 100 of the first embodiment, a bottom gate type thin film transistor was exemplified, but a top gate type thin film transistor may also be used. In that case, wiring may be appropriately drawn out from the source / drain electrodes and configured to bring the wiring into contact with the conductive material 33. The same applies to each of the embodiments described below.

[0025] According to the first embodiment as described above, by arranging the first substrate provided with the thin film transistor and the second substrate provided with the photodiode to face each other at a certain interval and sealing the space 20 including the thin film transistor and the photodiode with the sealing material 3, an organic semiconductor device capable of suppressing deterioration due to intrusion of moisture or the like from the outside can be obtained. Further, by adopting a structure in which the space 20 including the thin film transistor and the photodiode is sealed with the sealing material 3, compared with the structure in which a passivation film is formed on the laminate of the thin film transistor and the photodiode, the thin film transistor and the photodiode can be formed on the first substrate and the second substrate under their respective optimum conditions, so that an organic semiconductor device having high electrical and optical characteristics can be provided. Furthermore, by adopting a structure in which the space 20 including the thin film transistor and the photodiode is sealed with the sealing material 3, compared with the structure in which a passivation film is formed on the laminate of the thin film transistor and the photodiode, since the laminate is not damaged (damage caused by the solvent or damage caused by high temperature) during the formation of the passivation film, a highly reliable organic semiconductor device can be provided. The organic semiconductor device 100 of the first embodiment can be used, for example, for observing blood flow in the human body.

[0026] (Second Embodiment) FIG. 2 is a schematic cross-sectional view showing the configuration of the organic semiconductor device of the second embodiment. The organic semiconductor device 100a of the second embodiment includes a photodiode and a thin film transistor having the same configuration as those of the organic semiconductor device 100 of the first embodiment described above, and further includes a pressure sensor (third element). The photodiode and the thin film transistor are made of an organic material. Note that the same reference numerals are used for the components common to the organic semiconductor device 100 of the first embodiment, and detailed description thereof will be omitted.

[0027] The organic semiconductor device 100a shown in Fig. 2 includes a plurality of thin film transistors and a plurality of photodiodes between a first substrate 1 and a second substrate 2. In the illustrated example, the organic semiconductor device 100a includes two thin film transistors and photodiodes respectively. One thin film transistor and one photodiode facing each other form a pair, and the two are electrically and physically connected via a conductive material 18. In the illustrated example, a protective film 19 covering the organic semiconductor film 14 of each thin film transistor is provided, but this may be omitted.

[0028] Also, between the first substrate 1 and the second substrate 2, a pressure sensor is disposed between a pair of thin film transistors and photodiodes and another pair of thin film transistors and photodiodes. The pressure sensor includes electrodes 31, 32 and a pressure sensitive material 33 provided so as to be interposed between these electrodes 31, 32. A space 20 including these thin film transistors, photodiodes and the pressure sensor is sealed from the outside by a sealing material 3 provided between one surface of each of the first substrate 1 and the second substrate 2.

[0029] The electrode 31 is provided on one surface of the insulating film 11 on one surface side of the first substrate 1. This electrode 31 can be formed, for example, in the same process as the formation process of the source / drain electrodes 12, 13. The electrode 31 can be obtained by patterning a transparent conductive film such as an ITO (indium tin oxide) film or a metal film such as gold into a predetermined shape. Although not shown, wirings are appropriately connected to the electrode 31.

[0030] The electrode 32 is provided on one surface side of the second substrate 2. This electrode 32 can be formed, for example, in the same process as the formation process of the transparent electrode 15. The electrode 32 can be obtained by patterning a transparent conductive film such as an ITO (indium tin oxide) film into a predetermined shape. Although not shown, wirings are appropriately connected to the electrode 32.

[0031] The pressure-sensitive material 33 is provided so as to be in contact with each of the electrodes 31 and 32 and to be electrically and physically connected to each between one surface of the first substrate 1 and one surface of the second substrate 2. As the pressure-sensitive material 33, any material may be used as long as some physical value changes when the distance between the substrates of the first substrate 1 and the second substrate 2 changes due to an external pressure, and preferably, a material that exhibits a change in electrical resistance value. Specifically, for example, a pressure-sensitive conductive elastomer, polyvinylidene fluoride having a piezoelectric effect, or the like can be used as the pressure-sensitive material 33. The pressure-sensitive conductive elastomer is formed in a state where conductive particles (for example, carbon) are uniformly dispersed in an insulating silicon rubber.

[0032] In the illustrated example, one pressure sensor is shown, but a plurality of pressure sensors may be provided. In that case, each pressure sensor may be arranged in a matrix in the same manner as each photodiode, and a thin film transistor may be connected to each, and it may be operated by active matrix driving. Further, a plurality of pressure sensors may be connected to each other and passive driving may be performed without using a switching element such as a thin film transistor. In this case, with respect to each wiring connected to each electrode 31 of each pressure sensor, for example, it may be formed on the lower layer side of the insulating film 11 (between the insulating film 11 and the first substrate 1), and the electrode 31 and the wiring may be electrically and physically connected through a contact hole provided in the insulating film 11.

[0033] According to the second embodiment as described above, by adopting a structure in which the first substrate provided with the thin film transistor and the second substrate provided with the photodiode are arranged to face each other at a constant interval and the space 20 including the thin film transistor, the photodiode, and the pressure sensor is sealed with the sealing material 3, an organic semiconductor device capable of suppressing deterioration due to intrusion of moisture or the like from the outside can be obtained. The organic semiconductor device 100a of the second embodiment can be used, for example, for observing a pulse in a human body, detecting an operation of a respiratory device, or measuring blood pressure.

[0034] (Third Embodiment) FIG. 3 is a schematic cross-sectional view showing the configuration of the organic semiconductor device according to the third embodiment. The organic semiconductor device 100b according to the third embodiment includes a photodiode and a thin film transistor having the same configuration as the organic semiconductor device 100 of the first embodiment described above, and further includes a light emitting element (third element). The active layer of the photodiode and the active layer of the thin film transistor are each made of an organic material. Note that the same reference numerals are used for the components common to the organic semiconductor device 100 of the first embodiment, and detailed descriptions thereof are omitted.

[0035] The organic semiconductor device 100b shown in FIG. 3 includes a plurality of thin film transistors and a plurality of photodiodes between the first substrate 1 and the second substrate 2. In the illustrated example, the organic semiconductor device 100a includes two thin film transistors and photodiodes, respectively. One thin film transistor and one photodiode facing each other form a pair, and both are electrically and physically connected via a conductive material 18. Note that the protective film 19 covering the organic semiconductor film 14 of each thin film transistor may be omitted.

[0036] Also, between the first substrate 1 and the second substrate 2, a light source is disposed between one pair of thin film transistors and photodiodes and another pair of thin film transistors and photodiodes. The light source includes an LED chip (light emitting element) 40, a photospacer 41, and an electrode 42. The space 20 including these thin film transistors, photodiodes, and light source is sealed from the outside by a sealing material 3 provided between the first substrate 1 and one surface of the second substrate 2. Note that in the illustrated example, one light source (light emitting element) is shown, but a plurality of light sources (light emitting elements) may be provided.

[0037] The LED chip 40 is a semiconductor light emitting element that emits light having a predetermined wavelength. The light emitted from the LED chip 40 is emitted to the outside through the second substrate 2. As an example of the use, the light emitted from the LED chip 40 to the outside is reflected by an object (for example, the skin of a subject), and the reflected light is detected by the photodiode.

[0038] The photospacer 41 is provided so as to surround the LED chip 40 between one surfaces of the first substrate 1 and the second substrate 2. In the illustrated example, the photospacer 41 is formed in a trapezoidal cross-section. The photospacer 41 can be formed, for example, by patterning a polyimide film. This photospacer 41 is for preventing the light emitted from the LED chip 40 from directly entering the photodiode.

[0039] It is preferable that a metal reflective film made of silver, aluminum, or the like is provided on the inner surface of the photospacer 41, that is, the surface defining the space where the LED chip 40 is present. Further, instead of the photospacer 41, a layer having a light-shielding function such as a black filter layer may be formed. From the viewpoint of effective utilization of the light emitted from the LED chip 40, it is preferable to use the photospacer 41 having a metal reflective film on the inner surface.

[0040] The electrode 42 is provided on one surface of the insulating film 11 on one surface side of the first substrate 1. This electrode 42 is for supplying driving power to the LED chip 40 and is electrically and physically connected to the LED chip 40. This electrode 42 can be formed, for example, by the same process as the manufacturing process of the source / drain electrodes 12 and 13. The electrode 42 can be obtained, for example, by patterning a transparent conductive film such as an ITO (indium tin oxide) film or a metal film such as gold into a predetermined shape. Although not shown, wirings are appropriately connected to the electrode 42.

[0041] According to the third embodiment as described above, the first substrate provided with the thin film transistor and the second substrate provided with the photodiode are arranged to face each other at a certain interval, and the space 20 including the thin film transistor, the photodiode, and the light source (light emitting element) is sealed with the sealing material 3. Thus, an organic semiconductor device capable of suppressing deterioration due to intrusion of moisture or the like from the outside can be obtained. The organic semiconductor device 100b of the third embodiment can be used, for example, for observing blood flow in the human body, a pulse sensor, and a pulse oximeter (observing blood oxygen concentration). Since the light used for observation can be emitted from the light source and the reflected light can be detected by the photodiode, it is possible to achieve high functionality.

[0042] (Fourth Embodiment) As a fourth embodiment, an example of a method for manufacturing the organic semiconductor device 100a of the second embodiment described above will be described. Note that the organic semiconductor device 100 of the first embodiment has the same configuration as the organic semiconductor device 100a of the second embodiment except that it does not have a pressure sensor. Therefore, the organic semiconductor device 100 of the first embodiment can be manufactured in the same manner as the manufacturing method described below. Further, the organic semiconductor device 100b of the third embodiment has the same configuration as the organic semiconductor device 100a of the second embodiment except that it has a light source instead of a pressure sensor. Therefore, the organic semiconductor device 100b of the third embodiment can be manufactured in the same manner as the manufacturing method described below.

[0043] FIGS. 4(A) to 4(D) are schematic cross-sectional views for explaining a method for manufacturing the organic semiconductor device 100a. FIGS. 5(A), 5(B), 6(A), and 6(B) are schematic plan views for explaining a method for manufacturing the organic semiconductor device 100a. Note that FIGS. 4(A) and 5(A), FIGS. 4(B) and 5(B), FIGS. 4(C) and 6(A), and FIGS. 4(D) and 6(B) respectively show a cross-sectional view and a plan view in the same process. Further, the cross-sections shown in FIGS. 4(A) to 4(D) show cross-sections in the a-a line direction shown in FIGS. 5(A), 5(B), 6(A), and 6(B).

[0044] Referring to FIGS. 4(A) and 5(A), the process of forming a thin film transistor on the first substrate 1 will be described. First, a gate electrode 10 is formed on one surface of the first substrate 1. For example, a transparent conductive film or a metal film as described above is formed on one surface of the first substrate 1 and patterned by photolithography technology to obtain the gate electrode 10. The thickness of the gate electrode 10 can be, for example, about 40 nm.

[0045] Next, an insulating film 11 is formed on one surface of the first substrate 1 so as to cover the gate electrode 10. For example, an insulating film 11 can be formed by applying an organic material to be an insulating film on one surface of the first substrate 1. As described above, the insulating film 11 may be formed using an inorganic material.

[0046] Next, source / drain electrodes 12 and 13 and an electrode 31 are formed on one surface of the insulating film 11. At this time, wirings connected to the respective source / drain electrodes 12 and 13 and wirings connected to the electrode 31 are also formed as necessary. For example, a transparent conductive film or a metal film is formed on one surface of the insulating film 11, and the transparent conductive film or the like is patterned by photolithography technology to form the source / drain electrodes 12 and 13 and the electrode 31. The film thickness of the source / drain electrodes 12 and 13 and the electrode 31 can be, for example, about 40 nm.

[0047] In the case of forming the organic semiconductor device 100b of the third embodiment, in this step, an electrode 42 is formed instead of the electrode 31, an LED chip 40 is disposed on the electrode 42, and a photo spacer 41 is formed.

[0048] Next, an organic semiconductor film 14 is formed at a position in contact with each of the source / drain electrodes 12 and 13 and overlapping the gate electrode 10 in plan view. For example, an organic semiconductor material can be dropped by a method such as an inkjet method onto a predetermined position overlapping the gate electrode 10 in plan view and dried to obtain the organic semiconductor film 14. The channel length and channel width of the organic semiconductor film 14 can be, for example, 10 μm and 500 μm, respectively. Further, a protective film 19 covering the organic semiconductor film 14 is formed as necessary. This protective film 19 can be formed, for example, by applying an organic material serving as an insulating film over the organic semiconductor film 14 and drying it.

[0049] The process of forming a photodiode on the second substrate 2 will be described with reference to FIGS. 4(B) and 5(B). Here, it is assumed that a film-like substrate is used as the second substrate 2. First, the second substrate 2 is disposed on one surface of a support substrate 100. The support substrate 100 is used to support the second substrate 2 during the manufacture of the photodiode on the second substrate 2 and is configured to be peelable from the second substrate 2 later. For example, a glass substrate can be used as the support substrate 100.

[0050] A transparent electrode 15 and an electrode 32 are formed on one surface of the second substrate 2 supported by the support substrate 100. At this time, wirings connected to the transparent electrode 15 and wirings connected to the electrode 32 are also formed as necessary. For example, the transparent conductive film as described above is formed on one surface of the second substrate 2 and patterned by photolithography technology to obtain the transparent electrode 15 and the electrode 32. The thickness of the transparent electrode 15 and the electrode 32 can be, for example, about 40 nm.

[0051] Next, an active layer 16 is formed on one surface of the transparent electrode 15. For example, an organic semiconductor material can be dropped at a predetermined position overlapping with the transparent electrode 15 in a plan view by a method such as an inkjet method and dried to obtain the active layer 16. The film thickness of the active layer 16 can be, for example, several tens of nm. Note that functional layers such as a carrier injection layer, a carrier blocking layer, and a transport layer may be formed between the active layer 16 and the transparent electrode 15, and between the active layer 16 and the electrode 17, respectively.

[0052] Next, an electrode 17 is formed at a position facing the transparent electrode 15 with the active layer 16 interposed therebetween. For example, the electrode 17 can be obtained by patterning a metal film such as an aluminum film. As an example, it is preferable to form the electrode 17 by a mask evaporation method. At this time, wirings connected to the electrode 17 are also formed as necessary.

[0053] A process of forming the conductive material 18 and the pressure-sensitive material 33 at a predetermined position on the first substrate 1 and a process of forming the sealing material 3 will be described with reference to FIGS. 4(C) and 6(A). First, the conductive material 18 is formed at a predetermined position in contact with the source / drain electrode 13. For example, the conductive material 18 can be formed by dotwise applying a silver paste using a dispenser. Further, the pressure-sensitive material 33 is formed at a predetermined position in contact with the electrode 31. For example, the pressure-sensitive material 33 can be formed by dotwise applying a pressure-sensitive material using a dispenser. As the conductive material, a sealing material added with Au balls (particles coated with Au) may be used. Further, a gap control material can also be added to the conductive material. Since the conductive material spreads in the planar direction in the process of pressing the substrates described later, it is formed in consideration of the amount of spread.

[0054] Next, the sealing material 3 is applied so as to surround the periphery of the region where each thin film transistor is formed. When a gap control material is added to the sealing material 3, it is desirable that the diameter of the gap control material is smaller than the diameter of the conductive particles added to the conductive material 33.

[0055] Note that the conductive material 18, the pressure-sensitive material 33, and the sealing material 3 may be formed on the second substrate 2 instead of the first substrate 1.

[0056] With reference to FIGS. 4(D) and 6(B), the process of bonding the first substrate 1 and the second substrate 2 will be described. The first substrate 1 and the second substrate 2 are aligned and overlapped so that the conductive material 18 and the pressure-sensitive material 33 on the first substrate 1 side are in contact with the electrodes 17 and 32 on the second substrate 2 side, respectively. This overlapping is preferably performed in an atmosphere of an inert gas such as nitrogen or in a vacuum.

[0057] The first substrate 1 and the second substrate 2 are overlapped and the substrates are pressed together, and the sealing material 3 is cured. Regarding the curing method, depending on the resin used as the material of the sealing material 3, there may be cases where heat treatment is performed, photoirradiation treatment is performed, or both are performed together. Note that it is also preferable to spray a gap control material on one surface of the first substrate 1 or the second substrate 2 before overlapping the first substrate 1 and the second substrate 2. Thereafter, the support substrate 100 is peeled off from the second substrate 2.

[0058] By the method as described above, the organic semiconductor device 100a of the second embodiment can be manufactured. According to the manufacturing method of the fourth embodiment, since the thin film transistor and the photodiode are formed on different substrates and then the two substrates are bonded together, the thin film transistor and the photodiode can be formed under conditions optimized for each. For example, restrictions such as temperature conditions can be reduced.

[0059] (Example) FIGS. 7(A) and 7(B) are diagrams showing the configuration and a circuit configuration example of the organic semiconductor device of the example, respectively. Both are examples regarding the thin film transistor and the photodiode portions in the organic semiconductor device of each of the above-described embodiments. The organic semiconductor device of the example shown in each of FIGS. 7(A) and 7(B) includes a thin film transistor 110 and a photodiode 120. The difference between each example is the circuit configuration, which will be described below.

[0060] In each embodiment, the thin film transistor 110 is formed using a glass substrate as the first substrate 1. As the gate electrode 10, an aluminum electrode with a film thickness of 50 nm formed by vacuum evaporation is used. As the insulating film 11, an insulating film formed by laminating an alumina film (Al 2 O 3 film) with a film thickness of 20 nm and a PVCi film with a film thickness of 60 nm is used. As the source / drain electrodes 12 and 13, gold electrodes with a film thickness of 30 nm formed by vacuum evaporation are used. As the organic semiconductor material constituting the organic semiconductor film 14, a low-molecular organic semiconductor material can be used, and a liquid-crystalline low-molecular organic semiconductor material is preferably used. In particular, as the aromatic π-electron conjugated system site, it is preferable to use a liquid-crystalline low-molecular organic semiconductor material having BTBT (dialkyl-benzo[1,2-b:4,5-b']dithiophene) or anthracene. As the organic semiconductor film 14 of each embodiment, Ph-BTBT-10 (2-Decyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene), which is a liquid-crystalline low-molecular organic semiconductor material, is used. A liquid-crystalline organic semiconductor is an organic semiconductor that exhibits a liquid crystal phase. The organic semiconductor has an aromatic Π-electron conjugated system site that serves as a charge transport site.

[0061] Also, in each embodiment, the photodiode 120 is formed using a glass substrate as the second substrate 2. As the transparent electrode 15, an ITO electrode with a film thickness of 40 nm formed by sputtering is used. Also, in each embodiment, a PEIE (ethoxylated polyethyleneimine) intermediate film is provided between the ITO electrode and the active layer. As the active layer 16, a layer having a microphase separation structure (bulk heterojunction structure) formed by mixing a donor material and an acceptor material is used. As the donor material, a conjugated polymer or a low-molecular organic semiconductor material can be used. As the acceptor material, a low-molecular semiconductor material can be used. Specifically, as the donor material, 8H of a liquid-crystalline phthalocyanine derivative 2 Pc is used. As the donor material, for example, 8OH 2Non-liquid crystalline phthalocyanine derivatives such as Pc(1,4,8,11,15,18,22,25-octaalkoxy-phthalocyanine) can also be used. As the acceptor material, a fullerene derivative PC61BM (Phenyl-C61-butyric acid methyl ester) is used. As the electrodes 17, electrodes formed by laminating a MoO film with a thickness of 5 nm and a gold film with a thickness of 50 nm, each formed by vacuum evaporation, are used. 3 In the example of FIG. 7(A), among the source / drain electrodes 12 and 13 of the thin film transistor, the one functioning as the source is connected to the electrode 17 of the photodiode via a conductive material (conductive resin material) such as silver paste. On the other hand, in the example of FIG. 7(B), among the source / drain electrodes 12 and 13 of the thin film transistor, the one functioning as the drain is connected to the electrode 17 of the photodiode via a conductive material (conductive resin material) such as silver paste.

[0062] In the example of FIG. 7(A), among the source / drain electrodes 12 and 13 of the thin film transistor, the one functioning as the source is connected to the electrode 17 of the photodiode via a conductive material (conductive resin material) such as silver paste. On the other hand, in the example of FIG. 7(B), among the source / drain electrodes 12 and 13 of the thin film transistor, the one functioning as the drain is connected to the electrode 17 of the photodiode via a conductive material (conductive resin material) such as silver paste.

[0063] The thin film transistors in each example had a mobility of 2.0×10 -2 cm 2 / Vs and a threshold voltage of 1.7 V, and it was found that they exhibited excellent transistor characteristics. Also, deterioration of each element of the thin film transistor and the photodiode due to external moisture and the like was suppressed, and good operation could be confirmed even after a long period of time. Furthermore, no characteristic deterioration was observed in each element even after passing a high temperature and high humidity test at 60 °C and 90% RH for 500 hours.

[0064] Note that the present disclosure is not limited to the content of the above-described embodiments, and various modifications can be made and implemented within the scope of the gist of the present disclosure. For example, in each of the above-described embodiments and examples, a thin-film transistor and a photodiode configured using an organic material are shown as an example of an organic semiconductor device, but the organic semiconductor devices to which the present disclosure is applicable are not limited thereto. The present disclosure is applicable to organic semiconductor devices including various elements configured using an organic semiconductor. For example, the present disclosure can be applied to semiconductor devices including a liquid crystal element, an organic EL element, various sensors exemplified by a photodiode, using a thin-film transistor using an organic material, a dye-sensitized solar cell, a perovskite solar cell, and the like.

[0065] The present disclosure has the following features. (Appendix 1) A first substrate and a second substrate, each having one surface facing each other and being arranged with a space therebetween; A sealing material disposed between the first substrate and the second substrate and provided so as to surround a space defined between the first substrate and the second substrate; including at least one first element configured to include an organic semiconductor film is provided on one surface side of the first substrate within the space; at least one second element is provided on one surface side of the second substrate within the space. An organic semiconductor device. (Appendix 2) further comprising a conductive material provided within the space between the first substrate and the second substrate; the first element and the second element are electrically connected to each other via the conductive material. The organic semiconductor device according to Appendix 1. (Appendix 3) The first element is a thin-film transistor. The organic semiconductor device according to Appendix 1 or 2. (Appendix 4) The organic semiconductor film is configured using an organic semiconductor having liquid crystallinity. The organic semiconductor device according to any one of Supplementary Notes 1 to 3. (Supplementary Note 5) The second element is a photodiode. The organic semiconductor device according to any one of Supplementary Notes 1 to 4. (Supplementary Note 6) The photodiode has an active layer using an organic semiconductor. The organic semiconductor device according to Supplementary Note 5. (Supplementary Note 7) The first element and the second element are arranged so as to at least partially overlap in plan view. The organic semiconductor device according to any one of Supplementary Notes 1 to 6. (Supplementary Note 8) The organic semiconductor device further includes at least one third element provided in the space and arranged at a position that does not overlap the first element and the second element in plan view. The organic semiconductor device according to any one of Supplementary Notes 1 to 7. (Supplementary Note 9) The third element is a pressure sensor. The organic semiconductor device according to Supplementary Note 8. (Supplementary Note 10) The third element is a light-emitting element. The organic semiconductor device according to Supplementary Note 8.

Explanation of Reference Numerals

[0066] 1: First substrate, 2: Second substrate, 3: Encapsulant, 10: Gate electrode, 11: Insulating film, 12, 13: Source / drain electrodes, 14: Organic semiconductor film, 15: Transparent electrode, 16: Active layer, 17: Electrode, 18: Conductive material

Claims

1. A first substrate and a second substrate, each having one surface facing each other and being spaced apart from each other; A sealing material disposed between the first substrate and the second substrate and surrounding a space defined between the first substrate and the second substrate; comprising at least one first element configured to include an organic semiconductor film is provided on one surface side of the first substrate within the space; at least one second element is provided on one surface side of the second substrate within the space. An organic semiconductor device.

2. further comprising a conductive material provided within the space between the first substrate and the second substrate; The first element and the second element are electrically connected to each other via the conductive material. The organic semiconductor device according to claim 1.

3. The first element is a thin film transistor. The organic semiconductor device according to claim 1.

4. The organic semiconductor film is formed using an organic semiconductor having liquid crystallinity. The organic semiconductor device according to claim 1.

5. The second element is a photodiode. The organic semiconductor device according to claim 1.

6. The photodiode has an active layer using an organic semiconductor. The organic semiconductor device according to claim 5.

7. The first element and the second element are arranged so as to at least partially overlap in plan view. The organic semiconductor device according to claim 1.

8. further comprising at least one third element provided within the space and arranged at a position that does not overlap the first element and the second element in plan view. The organic semiconductor device according to claim 1.

9. The third element is a pressure sensor. The organic semiconductor device according to claim 8.

10. The third element is a light emitting element. The organic semiconductor device according to claim 8.

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