Substrate processing apparatus

Abstract

To provide a substrate processing apparatus for controlling the supply of process gas through a valve block part.SOLUTION: A substrate processing apparatus includes: a substrate support part for supporting a substrate; a shower-head part arranged to face the substrate support part and ejecting process gas toward the substrate; and a gas supply part for supplying the process gas to the shower-head part. The gas supply part includes a valve block part arranged in the upper part of the shower-head part and controlling the flow of the process gas.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus that controls the supply of a process gas via a valve block unit.

Background Art

[0002] After positioning a substrate to be processed in a process space, a substrate processing apparatus deposits reaction particles contained in a process gas injected into the process space onto the substrate using a method such as Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD). Examples of such substrate processing apparatuses include a single-wafer type substrate processing apparatus that can perform a processing step on a single substrate and a batch type substrate processing apparatus that can perform a processing step on a plurality of substrates simultaneously.

[0003] Among semiconductor manufacturing processes, the atomic layer deposition (ALD) process is performed by instantaneously supplying and discharging a large amount of gas at a specific pressure or higher in order to improve the production per hour (Unit Per Hour; UPH). However, depending on the position of the valve disposed in the gas line supplied to the chamber, there are limitations in minimizing the time due to a delay time caused by a distance problem from after the final valve to the chamber.

[0004] Therefore, a substrate processing apparatus capable of shortening the gas supply time and improving productivity is desired.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] The present invention provides a substrate processing apparatus that disposes a valve block portion above a shower head portion to control the supply of a process gas.

Means for Solving the Problem

[0007] A substrate processing apparatus according to an embodiment of the present invention includes a substrate support portion on which a substrate is supported, a shower head portion disposed opposite to the substrate support portion and injecting a process gas toward the substrate, and a gas supply portion that supplies the process gas to the shower head portion. The gas supply portion may include a valve block portion disposed above the shower head portion to adjust the flow of the process gas.

[0008] The process gas includes a plurality of gases, and the gas supply portion may sequentially supply the plurality of gases to the shower head portion.

[0009] The valve block portion may include a plurality of valves to which a plurality of gas lines through which the plurality of gases are respectively supplied are connected, and a valve block fixed to an upper surface of the shower head portion to support the plurality of valves.

[0010] The valve block portion may further include a heater that heats the valve block.

[0011] The valve block portion may further include a temperature measuring member that measures the temperature of the valve block.

[0012] The valve block includes an internal gas flow path connected to the plurality of gas lines, and the valve may control the flow of the plurality of gases in the internal gas flow path.

[0013] The inner surface of the internal gas flow path may be subjected to surface treatment.

[0014] The valve block portion may further include a plurality of gaskets respectively disposed between each of the plurality of valves and the valve block.

[0015] The valve block portion may be directly connected to the inflow portion of the shower head portion.

[0016] The plurality of gases include a source gas and a reaction gas, and the source gas and the reaction gas may flow into the inflow portion of the shower head portion separately.

[0017] The substrate support portion and the shower head portion each have a plurality of sub-chambers in which processes are performed independently, and the gas supply portion may further include a gas hub to which the process gas is supplied, and a branch line portion including gas lines branched from the gas hub and respectively connected to the shower head portions of the plurality of sub-chambers.

[0018] The gas hub may be formed in a plurality and the plurality of gases may be respectively supplied, and the branch line portion may be disposed at each gas hub.

[0019] The plurality of valves may be connected to the gas lines of the branch line portions respectively connected to the shower head portions of the same sub-chamber, extending in the same direction from different gas hubs.

[0020] The valve block portion may be configured in an integrated type.

Advantages of the Invention

[0021] The substrate processing apparatus according to the embodiment of the present invention disposes a valve block portion above the shower head portion to minimize the distance between the position of the valve controlling the supply of the process gas and the inflow portion of the shower head portion, thereby shortening the supply time of the process gas and implementing a stable gas supply, and improving productivity.

[0022] That is, since the valve has a minimum distance from the inflow part of the shower head part, there is no problem in instantaneously supplying the process gas, and it is possible to supply the gas in 0.2 ms or less. Therefore, the atomic layer deposition (ALD) process can be stably performed without a time delay associated with the length of the gas line.

[0023] And, since the valve block has an internal gas flow path and can narrow the footprint for supplying a plurality of gases to the shower head part, the size of the entire equipment can be reduced, and the flow of a plurality of gases using the valve can be easily controlled.

[0024] In addition, by using an integrated valve block in which an internal gas flow path is formed to maximize the purge effect of the gas line and by operating with a heater attached to the valve block so that a stable temperature can be maintained, contamination by particles and the like can be improved.

Brief Description of the Drawings

[0025]

Figure 1

Figure 2

Figure 3

Mode for Carrying Out the Invention

[0026] Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and should be embodied in various different forms. These embodiments are provided only to make the disclosure of the present invention complete and to fully inform those with ordinary knowledge of the scope of the invention. For ease of explanation, the components in the drawings may be exaggerated or reduced. In describing the present invention, the same reference numerals are assigned to the same components, and the drawings may be partially exaggerated in size to accurately explain the embodiments of the present invention. In the drawings, the same reference numerals indicate the same components.

[0027] FIG. 1 is a schematic cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.

[0028] Referring to FIG. 1, a substrate processing apparatus 100 according to an embodiment of the present invention may include a substrate support unit 110 that supports a substrate 10, a shower head unit 120 disposed opposite to the substrate support unit 110 and injecting a process gas toward the substrate 10, and a gas supply unit 130 that supplies the process gas to the shower head unit 120.

[0029] The substrate support unit 110 can support the substrate 10 on which processing is to be performed, and substrate processing such as vapor deposition can be performed by injecting a process gas onto the substrate 10 supported by the substrate support unit 110.

[0030] The shower head unit 120 can be disposed opposite to the substrate support unit 110, can supply a process gas toward the substrate 10, and can inject the process gas for substrate processing onto the substrate 10.

[0031] The gas supply unit 130 can supply the process gas to the shower head unit 120, can supply the process gas from a gas source (not shown), and can supply the process gas to the shower head unit 120 via a gas line 132.

[0032] Here, the gas supply unit 130 may be provided above the shower head unit 120 and include a valve block unit 131 that adjusts the flow of the process gas. The valve block unit 131 can be disposed above the shower head unit 120 and can adjust (or control) the flow (or supply) of the process gas supplied to the shower head unit 120 via the gas line 132.

[0033] The substrate processing apparatus 100 according to the present invention can arrange the valve block unit 131 above the shower head unit 120 to bring the position of the valve 131a that controls the supply of the process gas as close as possible to the inflow portion 121 of the shower head unit 120. Thereby, the supply time of the process gas can be shortened, and stable supply of the process gas can be implemented, and the processing efficiency (or productivity) of the substrate can be improved.

[0034] At this time, the process gas may include a plurality of gases, and the gas supply unit 130 can sequentially supply the plurality of gases to the shower head unit 120. The process gas may include a plurality of gases, and a thin film or the like can be deposited on the substrate 10 by the reaction of two or more gases. The plurality of gases may include a purge gas in addition to the (direct) process gas (for example, deposition gas or etching gas).

[0035] And the gas supply unit 130 can sequentially supply the plurality of gases to the shower head unit 120, and can deposit reaction particles contained in the process gas (or each of the plurality of gases) on the substrate 10 by atomic layer deposition (ALD). In the case of atomic layer deposition (ALD), while alternately supplying the plurality of gases, each reaction particle can be laminated (or deposited) in atomic layer units, and can be supplied instantaneously within a short time for each of the alternately supplied gases and laminated in atomic layer units.

[0036] Conventionally, a valve has been disposed in the middle of a gas line 132 between a gas supply source (not shown) and a shower head unit 120, resulting in a delay time due to the distance problem between the valve and the shower head unit 120. As a result, the processing time of the substrate as a whole has inevitably been prolonged. Further, even when the valve is closed, the (process) gas remains in the gas line 132 between the valve and the shower head unit 120 and continues to be supplied to the shower head unit 120, making it difficult to control the deposition thickness of each of the reaction particles in atomic layer units (per one time). Due to the fact that each of the plurality of gases cannot be completely separated (e.g., temporally and / or spatially) and supplied, there is also a risk that two or more of the gases react in the air or within the shower head unit 120 before reaching the substrate 10.

[0037] However, in the substrate processing apparatus 100 according to the present invention, by disposing a valve block unit 131 above the shower head unit 120, according to the control of the supply of the process gas using the valve 131a, the supply and interruption (or shut-off) of each of the gases can be immediately performed. As a result, it becomes easier to control the deposition thickness of each of the reaction particles (per one time), and each of the plurality of gases can be completely separated and supplied. That is, it is possible to prevent and / or suppress the reaction of two or more of the gases in the air or within the shower head unit 120 before reaching the substrate 10.

[0038] FIG. 2 is a schematic perspective view showing a valve block unit according to an embodiment of the present invention.

[0039] Referring to FIG. 2, the valve block portion 131 may include a plurality of valves 131a to which a plurality of gas lines 132 for supplying the plurality of gases are respectively connected, and a valve block 131b fixed to the upper surface of the shower head portion 120 to support the plurality of valves 131a. The plurality of valves 131a can be respectively connected (or coupled) to the plurality of gas lines 132 for supplying the plurality of gases, and can open and close each of the plurality of gas lines 132 to supply and cut off (or interrupt) each of the plurality of gases.

[0040] The valve block 131b can be fixed to the upper surface of the shower head portion 120 and can support the plurality of valves 131a. The valve block 131b is fixed to the upper surface of the shower head portion 120 close to the inflow portion 121 of the shower head portion 120, and the plurality of valves 131a can be arranged (as close as possible) to the inflow portion 121 of the shower head portion 120 via the valve block 131b. Thereby, according to the control of the supply of the process gas using the valve 131a, the supply and interruption of each of the gases can be immediately performed, it becomes easier to control the deposition thickness (once) of each of the reaction particles, and it is possible to prevent the reaction of each of the plurality of gases in the air or in the shower head portion 120 before they are completely separated and reach the substrate 10.

[0041] Therefore, in the substrate processing apparatus 100 according to the present invention, since the plurality of valves 131a have a minimum distance from the inflow portion 121 of the shower head portion 120, there is no problem in instantaneously supplying the process gas, and the gas can be supplied in 0.2 ms or less. Thus, the atomic layer deposition (ALD) process can be stably performed without a time delay associated with the length of the gas line 132.

[0042] Further, the valve block unit 131 may further include a heater 131d for heating the valve block 131b. The heater 131d can heat the valve block 131b and can maintain the temperature of the process gas that is held (or heated) at a predetermined temperature (or a constant temperature) and then delivered (or supplied) as it is, preventing a drop in the temperature of the process gas and the generation of particles during the process due to this. That is, the heater 131d can heat the valve block 131b to remove cold spots when the process gas is supplied, thereby preventing the temperature of the process gas from dropping (or becoming lower) than the predetermined temperature and preventing the generation of particles during the process due to the drop in the temperature of the process gas. On the other hand, the heater 131d can also be attached to and detached from the valve block 131b and can be replaced by attaching and detaching it to and from the valve block 131b.

[0043] At this time, the valve block unit 131 may further include a temperature measurement member 131e for measuring the temperature of the valve block 131b. The temperature measurement member 131e can measure the temperature of the valve block 131b and can control the temperature of the valve block 131b by measuring its temperature. Here, the temperature measurement member 131e may include a temperature sensor such as a thermocouple (TC).

[0044] For example, the substrate processing apparatus 100 of the present invention may further include a control unit (not shown) that controls the heater 131d to adjust the temperature of the valve block 131b, and the temperature of the valve block 131b can be adjusted via the control unit (not shown) to control the temperature of the process gas to a target temperature (or required temperature). Here, the control unit (not shown) reads the temperature of the valve block 131b via the temperature measuring member 131e, and controls the output (for example, output energy or energy release intensity) of the heater 131d so that the valve block 131b reaches a control temperature (or target temperature) for controlling the temperature of the process gas to the target temperature. At this time, the temperature of the valve block 131b can be read using a thermocouple disposed outside the valve block 131b, and a control thermocouple and a monitor thermocouple can also be disposed. The control thermocouple can be used for controlling the temperature of the valve block 131b, and the monitor thermocouple can be used for detecting an abnormal temperature and operating an automatic locking device such as an interlock.

[0045] That is, the substrate processing apparatus 100 according to the present invention can achieve stability by mounting (or disposing) a temperature measuring member 131e such as a thermocouple (TC) to remove risk factors generated during heating of the valve block 131b.

[0046] Further, the valve block 131b may include an internal gas flow path connected to a plurality of gas lines 132, and the valve 131a can control the flow of the plurality of gases in the internal gas flow path. The internal gas flow path can be formed inside the valve block 131b, and the plurality of gases can each flow, and the plurality of gases can flow spatially separated, or the plurality of gases can flow temporally separated.

[0047] The valve 131a can control the flow of the plurality of gases in the internal gas flow path. A plurality of valves 131a can block or leave open (or open) the internal gas flow path to open and close each of the plurality of gas lines 132, and can supply and cut off each of the plurality of gases.

[0048] For example, the internal gas flow path can be formed into a plurality (or two or more), and may be the same number as the number of the plurality of gas lines 132. Each of the internal gas flow paths can be respectively connected to each of the plurality of gas lines 132, and each of the plurality of gases can flow into (or be supplied to) the inside of the valve block 131b (that is, each of the respective internal gas flow paths) separately (or independently). Each of the plurality of gases can be separately (independently) separated through each of the internal gas flow paths and exit from the inside of the valve block 131b through different outlets. However, two or more of the internal gas flow paths can also merge so that two or more of the gases can exit from the inside of the valve block 131b through the same outlet.

[0049] On the other hand, the two or more gases exiting from the inside of the valve block 131b through the same outlet may contain the purge gas. In order to purge the source gas (S) at the outlet where the source gas (S) is supplied to the shower head unit 120, there is also a possibility that the source purge gas (SP) will escape (or be supplied). In order to purge the reactant gas (R) at the outlet where the reactant gas (R) is supplied to the shower head unit 120, there is also a possibility that the reactant purge gas (RP) will escape.

[0050] Therefore, the substrate processing apparatus 100 according to the present invention can narrow the footprint for the valve block 131b to provide the plurality of gases to the shower head portion 120 through the internal gas flow path, thereby enabling miniaturization of the size of the entire equipment. In addition, the flow of the plurality of gases using the (plurality of) valves 131a can be easily controlled.

[0051] Here, surface treatment may be applied to the inner surface of the internal gas flow path. In order to suppress the generation of particles when the gas flows into the inside of the valve block 131b (i.e., the internal gas flow path), the surface roughness of the inner surface of the internal gas flow path can be managed, and surface treatment can be applied to the inner surface of the internal gas flow path to control (or adjust) the surface roughness of the inner surface of the internal gas flow path.

[0052] When the inner surface of the internal gas flow path is not smooth and is uneven (or bumpy), when the flow of the gas is strong (or fast), among the inner surface of the internal gas flow path, the protruding uneven portions may be scraped off by the flow of the gas, generating contaminants such as particles. When the flow of the gas is weak (or slow), as a result, the gas remains between the uneven portions of the inner surface of the internal gas flow path, and may adhere to the inner surface of the internal gas flow path in the form of particles and / or a film (or thin film), and may act as impurities when sprayed onto the substrate 10 together with the gas supplied by the supply of the gas. However, the substrate processing apparatus 100 according to the present invention can suppress and / or prevent the inner surface of the internal gas flow path from being scraped off by the fast (or strong) gas flow by applying surface treatment to the inner surface of the internal gas flow path to make it smooth, and can prevent and / or suppress the gas from remaining in the internal gas flow path (for example, on the inner surface of the internal gas flow path).

[0053] Therefore, the substrate processing apparatus 100 according to the present invention can maximize the purging effect of the gas line 132 and / or the internal gas flow path by using the integrated valve block 131b in which the internal gas flow path is formed, and by operating with a heater 131d attached to the valve block 131b so that a stable temperature can be maintained, contamination by particles and the like can be improved.

[0054] And the valve block portion 131 may further include a plurality of gaskets 131c respectively disposed between each of the plurality of valves 131a and the valve block 131b. The plurality of gaskets 131c can be respectively disposed between each of the plurality of valves 131a and the valve block 131b, and can maintain a gas seal between each valve 131a and the valve block 131b, preventing leakage of the gas from between the valve 131a and the internal gas flow path. For example, the plurality of gaskets 131c may include metal gaskets, and since they are excellent in pressure resistance and heat resistance, even if the gas flows at high pressure, a gas seal can be maintained between each valve 131a and the valve block 131b, and even if the valve block 131b is heated by the heater 131d, a gas seal can be stably maintained between each valve 131a and the valve block 131b without deformation.

[0055] At this time, the valve block portion 131 can be directly connected to the inflow portion 121 of the shower head portion 120. By directly connecting the valve block portion 131 to the inflow portion 121 of the shower head portion 120, it is possible to minimize the distance between the inflow portion 121 of the shower head portion 120 and the valve 131a, and thereby, while sequentially supplying the plurality of gases, each gas can be instantaneously supplied, and an atomic layer deposition (ALD) process can be stably performed without a time delay due to the long distance between the inflow portion 121 of the shower head portion 120 and the valve 131a.

[0056] The plurality of gases may include a source gas (S) and a reaction gas (R), and the source gas (S) and the reaction gas (R) can flow into the inflow portion 121 of the shower head portion 120 separately. The plurality of gases may include a source gas (S) and a reaction gas (R) that reacts with the source gas. The source gas (S) may include titanium tetrachloride (TiCl 4 ), dichlorosilane (DCS, SiH 2 Cl 2 ), etc. And the reaction gas (R) can react with the source gas and may be different from the source gas, and may include ammonia (NH 3 ) and hydrogen (H 2 ), etc.

[0057] At this time, by separating the source gas (S) and the reaction gas (R) from each other temporally (and / or spatially) and injecting (or supplying) them onto the substrate 10, an atomic layer deposition (ALD) process can be performed. For this purpose, in the inflow portion 121 of the shower head portion 120, the source gas (S) and the reaction gas (R) can flow in while being separated from each other temporally and / or spatially. For example, the inflow portion 121 of the shower head portion 120 can be formed by an inlet, or can be formed in a nozzle shape capable of injecting the gas onto the inner (e.g., inner (wall) surface) of the shower head portion 120. In order to supply the source gas (S) and the reaction gas (R) separately in space, two outlets can be formed in the valve block 131b, and the inflow portion 121 can be formed by two inlets or nozzles that communicate with the two outlets in the shower head portion 120 respectively.

[0058] Further, the plurality of gases may further include a source purge gas (SP) and a reaction purge gas (RP). The source purge gas (SP) can purge the source gas, and the reaction purge gas (RP) can purge the reaction gas. The source purge gas (SP) and the reaction purge gas (RP) may be inert gases, such as nitrogen (N 2 ), hydrogen (H 2 ), and argon (Ar), etc., but the present invention is not particularly limited thereto. At this time, the source purge gas (SP) and the reaction purge gas (RP) may be of the same gas type, or may be of different types from each other, and at least their functions and the supply (or injection) order thereby may be different from each other. On the other hand, the source purge gas (SP) and the reaction purge gas (RP) may have at least one of the injection amount, injection pressure, and injection speed different according to their functions, but the injection amount, injection pressure, and injection speed may all be the same.

[0059] On the other hand, the valve 131a can be constituted by an on-off valve, but can also be constituted by a partition valve. When the valve 131a is constituted by a partition valve, there may be a plurality of valves 131a, or there may be a single valve 131a. Here, the partition valve can selectively supply the plurality of gases according to the rotation angle of a switching unit (not shown). For example, when the plurality of gases are four, the first gas (for example, the source gas) is supplied at a rotation angle of 0° (or an angle range of 0 to 90°) obtained by dividing 360° by 4, the second gas (for example, the source purge gas) is supplied at a rotation angle of 90° (or an angle range of 90 to 180°), the third gas (for example, the reaction gas) is supplied at a rotation angle of 180° (or an angle range of 180 to 270°), and the fourth gas (for example, the reaction purge gas) is supplied at a rotation angle of 270° (or an angle range of 270 to 360 (0°)).

[0060] FIG. 3 is a conceptual diagram for explaining a gas supply unit that supplies process gas to a plurality of sub-chambers according to an embodiment of the present invention.

[0061] Referring to FIG. 3, the substrate processing apparatus 100 according to the present invention may further include a substrate support portion 110 and a shower head portion 120, and a plurality of sub-chambers 150 in which processes are independently performed.

[0062] The plurality of sub-chambers 150 can each have a substrate support portion 110 and a shower head portion 120, can each perform a process on the substrate 10, can each independently perform a process, and can each perform a process on a plurality of substrates 10. At this time, the plurality of sub-chambers 150 can form a chamber module by being spatially separated (or isolated) by a partition wall or the like, or can be partitioned into a plurality of sub-chambers 150 (for example, a first sub-chamber, a second sub-chamber, a third sub-chamber, and a fourth sub-chamber) in which processes are independently performed only regionally within the chamber wall 155 to form a chamber module. For example, the first sub-chamber 150a, the second sub-chamber 150b, the third sub-chamber 150c, and the fourth sub-chamber 150d disposed within the chamber wall 155 of the chamber module are only regionally partitioned within the chamber wall 155, communicate with each other, and may not be spatially separated by a partition wall or the like.

[0063] On the other hand, the first sub-chamber 150a, the second sub-chamber 150b, the third sub-chamber 150c, and the fourth sub-chamber 150d can each independently perform a process, can be composed of the same components such as a substrate support portion 110 and a shower head portion 120, and may be distinguished by the numbers of the sub-chambers 150 in terms of position (or region).

[0064] For example, the first sub-chamber 150a may include a first substrate support portion 110 on which the first substrate 10 is supported, and a first shower head portion 120 disposed on the first substrate support portion 110 and configured to inject a gas for processing the substrate onto the first substrate 10 supported by the first substrate support portion 110. The second sub-chamber 150b may include a second substrate support portion 110 on which the second substrate 10 is supported, and a second shower head portion 120 disposed on the second substrate support portion 110 and configured to inject a gas for processing the substrate onto the second substrate 10 supported by the second substrate support portion 110.

[0065] The first shower head portion 120 and the second shower head portion 120 can be respectively connected to the gas line 132, can be respectively disposed in the first sub-chamber 150a and the second sub-chamber 150b, and any one of the plurality of gases can be selectively supplied and the supplied gas can be injected. At this time, the same gas may be supplied to the first shower head portion 120 and the second shower head portion 120, or different gases may be supplied.

[0066] The first substrate support portion 110 and the second substrate support portion 110 are respectively disposed in the first sub-chamber 150a and the second sub-chamber 150b and can respectively support the first substrate 10 and the second substrate 10. Through this, processing of a plurality of substrates 10 can be simultaneously performed in one said chamber module, thereby improving the process yield.

[0067] At this time, the gas supply unit 130 may further include a branch line unit 135 including a gas hub 133 to which the process gas is supplied, and gas lines 132 branched from the gas hub 133 and respectively connected to the shower head units 120 of the plurality of sub-chambers 150. The gas hub 133 can supply the process gas from the gas supply source (not shown), and a gas supply line (not shown) is connected, and the process gas can be supplied from the gas supply source (not shown) through the gas supply line (not shown). Here, the process gas can be first (or primarily) filled in the gas hub 133, and after the process gas is completely filled inside and the internal pressure becomes uniform as a whole, it can be branched by the branch line unit 135 including the gas lines 132a, 132b, 132c, and 132d and supplied to the plurality of gas lines 132. For example, the gas hub 133 can have the same number of sub-spaces as the number of gas lines 132a, 132b, 132c, and 132d into which the branch line unit 135 branches, and the sub-spaces communicate with each other so that the process gas supplied from one gas supply line (not shown) can be completely filled, and may be partially blocked by a partition or the like to divide (or partition) the region. At this time, the process gas can be supplied to each of the gas lines 132a, 132b, 132c, and 132d in a state where the process gas is first filled in each sub-space and the pressures of all the sub-spaces become the same (or uniform) (or later).

[0068] The branch line part 135 can be composed of gas lines 132a, 132b, 132c, and 132d that are branched from the gas hub 133 and are respectively connected to the shower head parts 120 of the plurality of sub-chambers 150. The process gas branched from the gas hub 133 can be supplied and flow through it, and the supplied process gas can be delivered to each sub-chamber 150 and / or shower head part 120. For example, each of the gas lines 132a, 132b, 132c, and 132d of the branch line part 135 branched from the gas hub 133 can be respectively connected to different sub-chambers 150 and / or shower head parts 120, and a processing step for each substrate 10 can be performed in each sub-chamber 150. At this time, in each sub-chamber 150, the processes can be performed independently, and the same process can be performed, or different processes can be performed respectively.

[0069] Here, the gas hubs 133 are formed in plurality so that the plurality of gases can be respectively supplied, and the branch line part 135 can be disposed at each gas hub 133. The gas hubs 133 can be formed in plurality and can be stacked in the vertical direction (or a direction perpendicular to the radial direction of the gas hub), and the plurality of gases can be respectively supplied to the plurality of gas hubs 133, and the plurality of gases can be respectively (independently or individually) packed. At this time, the same gas can be packed in each gas hub 133, or different gases can be packed in each gas hub 133. Depending on the number of the plurality of gases, the same gas can be packed in some groups of gas hubs 133, and different gases that are not the same as (or different from) the gas packed in the some groups of gas hubs 133 can be packed in each of the remaining gas hubs 133. And the plurality of gas hubs 133 can be stacked in the vertical direction (for example, the up-down direction), and at least two or more gas lines 132a, 132b, 132c, 132d can be branched and respectively connected to each gas hub 133, and the gas lines 132a, 132b, 132c, 132d of the branch line part 135 connected (or branched) to each gas hub 133 can extend radially from each gas hub 133. Thereby, interference between the plurality of gas lines 132 is eliminated, and the plurality of gases can be stably supplied to the respective shower head parts 120. Further, when the plurality of gas hubs 133 are stacked in the vertical direction, the gas lines 132a, 132b, 132c, 132d of the branch line part 135 are branched and extended horizontally from each gas hub 133, so that the gas lines 132a, 132b, 132c, 132d of the branch line part 135 branched from each gas hub 133 can flow (or be supplied) uniformly to each of them.

[0070] That is, the branch line part 135 can be disposed at each gas hub 133, and the gas lines 132a, 132b, 132c, 132d of the branch line part 135 branched from each gas hub 133 can stably supply the plurality of gases to each of the respective shower head parts 120 without interference.

[0071] And a plurality of valves 131a are each connectable to a gas line 132 of each branch line portion 135 that extends in the same direction from different gas hubs 133 and is connected to a shower head portion 120 of the same (or identical) sub-chamber 150. Each of the plurality of valves 131a is connectable to a gas line 132 of each of the gases supplied from different gas hubs 133. The gas line 132 of each of the gases may be one gas line 132 for each of the plurality of branch line portions 135 (or for each of the branch line portions), and may extend in the same direction from different gas hubs 133 and be connectable to a shower head portion 120 of the same (or identical) sub-chamber 150. Through this, the plurality of gases can be supplied for each sub-chamber 150, the plurality of valves 131a can be controlled to selectively (e.g., sequentially) supply the plurality of gases, and the plurality of gases can be sequentially supplied to perform an atomic layer deposition (ALD) process.

[0072] On the other hand, the gas hub 133 and the plurality of gas lines 132 can be simultaneously heated by an integrated heater unit (not shown). The integrated heater unit (not shown) may include a heat conductive block that encloses the plurality of gas lines 132 and the gas hub 133, and a heating element that at least partially contacts the heat conductive block and heats the heat conductive block. The heat conductive block can enclose the plurality of gas lines 132 and the gas hub 133, and can be heated by the heating element to transfer heat to the plurality of gas lines 132 and the gas hub 133, so that the process gas in the gas hub 133 and the plurality of gas lines 132 can be heated. For example, the heat conductive block can enclose the plurality of gas lines 132 and the gas hub 133 together, and the gas hub 133 and the plurality of gas lines 132 can be simultaneously heated by heat conduction.

[0073] The heating element can at least partially contact the heat-conductive block to heat the heat-conductive block, and heat can be transferred and heated to a plurality of gas lines 132 and a gas hub 133 through the heat-conductive block. At this time, the heating element can be in close contact with the heat-conductive block so that heat is smoothly conducted (or transferred) to the heat-conductive block. On the other hand, the heating element is detachable from the heat-conductive block and can be replaced by attaching and detaching it to and from the heat-conductive block.

[0074] Here, the heat-conductive block may include a hub accommodating portion that wraps around the gas hub 133 and a gas line accommodating portion that wraps around a plurality of gas lines 132. The hub accommodating portion can wrap around the gas hub 133, can cover the entire outer surface of the gas hub 133, and can contact (or be in close contact with) the outer surface of the gas hub 133 to transfer (or conduct) the heat of the heating element to the gas hub 133, so that the gas hub 133 can be heated for heating the process gas.

[0075] The gas line accommodating part can be coupled (or connected) to the hub accommodating part in an integrated manner, can wrap a plurality of gas lines 132, and can extend from the hub accommodating part according to the direction in which each gas line 132 branches from the gas hub 133. For example, the gas line accommodating part can also wrap a plurality of gas lines 132 together by surrounding (or enclosing) the hub accommodating part and extending outward (direction) from the outer surface (or circumferential surface) of the hub accommodating part, and can also wrap each gas line 132 in each (branch) direction (or the same direction) by contacting the outer surface of the hub accommodating part and extending in the branching direction of the gas line 132. At this time, the gas line accommodating part can wrap the gas lines 132 of each branch line part 135 connected to the shower head part 120 of the sub-chamber 150 as described above together (or wrap all the gas lines of each gas together). Through this, the gas line accommodating part can be in close contact (or contact) with the outer surfaces of each of the plurality of gas lines 132 and conduct (or transfer) the heat of the heating element to all of the plurality of gas lines 132, so that the plurality of gas lines 132 can be heated, and the process gas in the plurality of gas lines 132 can be heated. On the other hand, the gas line accommodating part can be composed of two blocks, and grooves are formed in each block so as to conform to the shape of the gas line 132, and it is possible to have a shape capable of wrapping the gas line 132.

[0076] And the valve block unit 131 can be configured in an integrated manner. For example, the valve block unit 131 may be an Integrated Gas System (IGS), and by connecting pipes (for example, the gas lines) used in semiconductor front-end equipment (CVD, etching, metal, etc.) to a block and a metal gasket (for example, by the valve block and the plurality of gaskets) for integration, it can be a system that is modularized and / or miniaturized so as to control the supply of fluid (for example, the supply of the process gas). The plurality of valves 131a may also be valves of the Integrated Gas System (IGS) type. Through this, the dead volume (unused space) in the valve block 131b for the supply of gas (for example, the supply of the process gas) can be narrowed, and thereby, the size of the overall equipment can also be reduced.

[0077] In addition, the gas supply unit 130 can selectively supply the plurality of gases to the first sub-chamber 150a, the second sub-chamber 150b, the third sub-chamber 150c, and the fourth sub-chamber 150d, and can supply the plurality of gases to the first sub-chamber 150a, the second sub-chamber 150b, the third sub-chamber 150c, and the fourth sub-chamber 150d separately by distinguishing them. The gas supply unit 130 can usually supply the same gas to all of the first sub-chamber 150a, the second sub-chamber 150b, the third sub-chamber 150c, and the fourth sub-chamber 150d, or can supply different gases to the first sub-chamber 150a, the second sub-chamber 150b, the third sub-chamber 150c, and the fourth sub-chamber 150d by distinguishing the plurality of gases, and can supply a gas different from that of the other sub-chambers 150 to at least any one of the first sub-chamber 150a, the second sub-chamber 150b, the third sub-chamber 150c, and the fourth sub-chamber 150d. At this time, the number of gas supply sources (not shown) of the gas supply unit 130 may be the same as the number of the plurality of gases, may be the same as the number of sub-chambers 150, or the number of sub-chambers 150 and the number of the plurality of gases may be the same.

[0078] Here, a control unit (not shown) can control the gas supply unit 130 so that the gases supplied between the first sub-chamber 150a, the second sub-chamber 150b, the third sub-chamber 150c, and the fourth sub-chamber 150d are alternately supplied to the first to fourth sub-chambers 150a, 150b, 150c, 150d in sequence (or in order), the gases supplied respectively can be alternately supplied to the first sub-chamber 150a, the second sub-chamber 150b, the third sub-chamber 150c, and the fourth sub-chamber 150d, and the plurality of gases can be supplied in sequence so as to be different from the gas supplied immediately before (or previously).

[0079] For example, the plurality of gases can be supplied to each of the first sub-chamber 150a, the second sub-chamber 150b, the third sub-chamber 150c, and the fourth sub-chamber 150d in a predetermined order, and it is possible to determine the gas to be supplied following (after or subsequent to) the gas that was previously supplied, and the gas can be supplied so as not to overlap (or not duplicate) the gas that was previously supplied.

[0080] At this time, the plurality of gases can circulate in the order of the source gas (S) → the source purge gas (SP) → the reaction gas (R) → the reaction purge gas (RP), and the source gas (S) can be supplied after the reaction purge gas (RP). Since the start gases are different for each sub-chamber 150, different gases can be supplied to each other at the same time.

[0081] That is, through the control unit (not shown), the first sub-chamber 150a, the second sub-chamber 150b, the third sub-chamber 150c, and the fourth sub-chamber 150d can perform different processes by being supplied with different gases from each other at the same time (or time). Here, the different gases include those that are of the same type but only differ in their functions (or cases).

[0082] For example, the first sub-chamber 150a can perform a process of supplying the source gas (S) (initially) to deposit a source material layer (or, atomic layer), the second sub-chamber 150b can perform a process of supplying the reaction purge gas (RP) (initially) to purge (the reaction gas), the third sub-chamber 150c can perform a process of supplying the reaction gas (R) (initially) to deposit a reactant layer (or, atomic layer), and the fourth sub-chamber 150d can perform a process of supplying the source purge gas (SP) (initially) to purge (the source gas). The substrate processing apparatus 100 of the present invention can perform not only Chemical Vapor Deposition (CVD) but also Atomic Layer Deposition (ALD), and can deposit the source gas and the reaction gas in atomic layer units.

[0083] That is, in the first sub-chamber 150a, gases can be supplied in the order of the source gas (S) → the source purge gas (SP) → the reaction gas (R) → the reaction purge gas (RP), in the second sub-chamber 150b, gases can be supplied in the order of the reaction purge gas (RP) → the source gas (S) → the source purge gas (SP) → the reaction gas (R), in the third sub-chamber 150c, gases can be supplied in the order of the reaction gas (R) → the reaction purge gas (RP) → the source gas (S) → the source purge gas (SP), and in the fourth sub-chamber 150d, gases can be supplied in the order of the source purge gas (SP) → the reaction gas (R) → the reaction purge gas (RP) → the source gas (S).

[0084] Therefore, the substrate processing apparatus 100 of the present invention can supply the plurality of gases (i.e., the source gas, the reaction gas, the source purge gas, and the reaction purge gas) to the first sub-chamber 150a, the second sub-chamber 150b, the third sub-chamber 150c, and the fourth sub-chamber 150d separately, so that a constant amount of gas can always be supplied into the plurality of sub-chambers 150. Thereby, the pressure in the plurality of sub-chambers 150 can be controlled to a stable process pressure, and the process pressure in the plurality of sub-chambers 150 can be kept constant (or the same). Through this, it is also possible to improve the contamination of the plurality of sub-chambers 150 caused by the sudden change in the process pressure in the plurality of sub-chambers 150 due to the change of the gas.

[0085] At this time, the plurality of valve block parts 131 can be arranged respectively close to (or adjacent to) each of the shower head parts 120 of the sub-chamber 150a, the second sub-chamber 150b, the third sub-chamber 150c, and the fourth sub-chamber 150d, and the plurality of valves 131a supported by each valve block 131b can be directly connected (or communicated) to the respective shower head parts 120. Thereby, by controlling the plurality of valve block parts 131 respectively via the control part (not shown), each of the gases can be immediately (or directly) injected (or supplied), or the injection can be stopped (or blocked). That is, with the opening and closing of the plurality of valves 131a, it is possible to immediately inject or stop injecting the source gas (S) through the respective shower heads, to inject or stop injecting the reaction gas (R) through the respective shower heads, to inject or stop injecting the source purge gas (SP) through the respective shower heads, and to inject or stop injecting the reaction purge gas (RP) through the respective shower heads.

[0086] Through this, it is possible to suppress or prevent the supply of the process gas from being interrupted (or slowed down) for a while due to the opening and closing of the plurality of valves 131a accompanying the change of the gas. Conventionally, since the distance between each of the shower head portions 120 and each valve is long, even when the valve is opened, time is required for the gas to be supplied (or move) from the valve to each of the shower head portions 120. As a result, the gas could not be immediately ejected from each of the shower head portions 120. Further, even when the valve is closed, since the gas still remains between the valve and each of the shower head portions 120, until all of the remaining gas is ejected, the gas cannot be immediately shut off, and there is also a problem that the gas continues to be ejected. However, in the present invention, the plurality of valves 131a can be arranged as close as possible to each of the shower head portions 120 via the valve block portion 131, and immediately with the opening and closing of the plurality of valves 131a, the source gas (S), the reaction gas (R), the source purge gas (SP), and the reaction purge gas (RP) can be ejected or the ejection can be stopped through each of the shower head portions 120.

[0087] Thus, in the present invention, by disposing a valve block portion above the shower head portion to bring the position of the valve for controlling the supply of the process gas as close as possible to the inflow portion of the shower head portion, the supply time of the process gas can be shortened to perform stable gas supply, and the productivity can be improved. That is, since the valve has a minimum distance from the inflow portion of the shower head portion, there is no problem in instantaneously supplying the process gas, and it is possible to supply gas in 0.2 ms or less. Therefore, the atomic layer deposition (ALD) process can be stably performed without time delay associated with the length of the gas line. And, since the valve block has an internal gas flow path and can narrow the footprint for supplying a plurality of gases to the shower head portion, the size of the entire equipment can be reduced, and the flow control of a plurality of gases using the valve can be easily performed. Further, by using an integrated valve block in which an internal gas flow path is formed to maximize the purge effect of the gas line and operating the valve block with a heater attached thereto so that a stable temperature can be maintained, contamination by particles can be improved.

[0088] As described above, the preferred embodiments of the present invention have been illustrated and described. However, the present invention is not limited to the above-described embodiments at all, and various modifications can be made without departing from the gist of the present invention claimed in the claims, and it should be understood that other equivalent embodiments can be adopted by those having ordinary knowledge in the field to which the present invention belongs. Therefore, the technical protection scope of the present invention should be determined by the appended claims.

Explanation of Reference Numerals

[0089] 10: Substrate 100: Substrate processing apparatus 110: Substrate support portion 120: Shower head portion 121: Inflow portion 130: Gas supply portion 131: Valve block portion 131a: Valve 131b: Valve block 131c: Gasket 131d: Heater 131e: Temperature measurement member 132: Gas line 132a: First gas line 132b: Second gas line 132c: Third gas line 132d: Fourth gas line 133: Gas hub 135: Branch line section 150: Sub-chamber 150a: First sub-chamber 150b: Second sub-chamber 150c: Third sub-chamber 150d: Fourth sub-chamber 155: Chamber wall

Claims

1. a substrate support portion on which a substrate is supported; a shower head disposed opposite the substrate support and configured to inject a process gas toward the substrate; a gas supply unit for supplying the process gas to the shower head unit; Equipped with The gas supply unit includes a valve block unit disposed above the shower head unit and configured to adjust a flow of the process gas.

2. The process gas includes a plurality of gases, The substrate processing apparatus according to claim 1 , wherein the gas supply unit sequentially supplies the plurality of gases to the shower head unit.

3. The valve block portion is a plurality of valves to which a plurality of gas lines to which the plurality of gases are respectively supplied are connected; a valve block fixed to an upper surface of the showerhead and supporting the valves; The substrate processing apparatus of claim 2 .

4. The substrate processing apparatus according to claim 3 , wherein the valve block portion further comprises a heater for heating the valve block.

5. The substrate processing apparatus according to claim 4 , wherein the valve block portion further comprises a temperature measuring member for measuring a temperature of the valve block.

6. the valve block includes an internal gas flow passage connected to the plurality of gas lines; The substrate processing apparatus of claim 3 , wherein the valve controls flow of the plurality of gases in the internal gas flow passage.

7. The substrate processing apparatus according to claim 6 , wherein an inner surface of the internal gas flow passage is subjected to a surface treatment.

8. The substrate processing apparatus of claim 6 , wherein the valve block portion further comprises a plurality of gaskets disposed between the valves and the valve block, respectively.

9. The substrate processing apparatus of claim 2 , wherein the valve block is directly connected to an inlet of the shower head.

10. the plurality of gases includes a source gas and a reaction gas; The substrate processing apparatus according to claim 9 , wherein the source gas and the reaction gas flow into the inlet of the shower head while being separated from each other.

11. The method further includes a plurality of sub-chambers each having the substrate support and the shower head, and in which processes are independently performed; The gas supply unit includes: a gas hub to which the process gas is supplied; a branch line section including the gas lines branched from the gas hub and connected to the shower heads of the plurality of sub-chambers; The substrate processing apparatus of claim 3 , further comprising:

12. The gas hub is formed in a plurality of parts, and the plurality of gases are respectively supplied to the gas hub, The substrate processing apparatus according to claim 11 , wherein the branch line portion is disposed in each of the gas hubs.

13. 13 . The substrate processing apparatus according to claim 12 , wherein the plurality of valves are connected to the gas lines of the branch line portions extending in the same direction from the different gas hubs and connected to the shower head portion of the same sub-chamber.

14. The substrate processing apparatus according to claim 1 , wherein the valve block portion is configured as an integrated type.

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