Display device

Abstract

To improve the detection sensitivity of a touch panel, improve the visibility of the touch panel, provide a touch panel that can be bent, provide a thin touch panel, or provide a lightweight touch panel.SOLUTION: A touch sensor includes a first substrate, a first conductive layer, a second conductive layer, and an insulating layer. The first conductive layer includes a region existing between the first substrate and the second conductive layer. The insulating layer includes a region existing between the first conductive layer and the second conductive layer. The first conductive layer, the second conductive layer, and the insulating layer form a capacitor. The second conductive layer includes an opening. The opening of the second conductive layer and the first conductive layer include a region where they overlap with each other.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a touch sensor. Another aspect of the present invention relates to a touch panel. Regarding Chipanel.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. One aspect of the present invention relates to a process, a machine, or a method of manufacture. , manufacture, or composition of matter. More specifically, the technical field of one embodiment of the present invention disclosed in this specification is a semiconductor device, Display device, light-emitting device, power storage device, storage device, electronic device, lighting device, input device, input / output device , their driving methods, or their manufacturing methods can be given as examples.

[0003] In this specification and the like, a semiconductor device is a device that can function by utilizing semiconductor characteristics. Refers to devices in general. Semiconductor elements such as transistors, semiconductor circuits, computing devices, memory The device is one aspect of a semiconductor device. Optical devices, power generation devices (including thin-film solar cells, organic thin-film solar cells, etc.), and electronic devices The device may include a semiconductor device. [Background technology]

[0004] In recent years, display devices are expected to be used for a variety of purposes, and diversification is required. For example, the development of smartphones and tablet devices equipped with touch panels as mobile information terminals. is currently underway.

[0005] In addition, Patent Document 1 discloses a film substrate on which transistors and other semiconductor devices are mounted as switching elements. A flexible active matrix type light emitting device having an organic EL element is disclosed. . [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2003-174153 A Summary of the Invention [Problem to be solved by the invention]

[0007] The display panel is a device that allows you to touch the screen with your finger or a stylus as a user interface. There is a demand for touch panels that can accept input via touch.

[0008] For example, the touch panel may be configured so that a touch sensor is provided on the visible side of the display panel. It is desirable for the touch sensor provided in the touch panel to have high detection sensitivity. Since the touch sensor is provided overlapping the display panel, the display panel is The visibility may decrease.

[0009] An object of one embodiment of the present invention is to improve the detection sensitivity of a touch panel. One of the objects of the present invention is to improve the visibility of a touch panel. One of the objectives is to provide a touch panel that can be bent. One of the objectives is to provide a lightweight touch panel. Another object of the present invention is to provide a highly reliable touch panel.

[0010] Alternatively, it is an object of the present invention to provide a novel input device. One of the objectives is to provide the following.

[0011] The description of these problems does not preclude the existence of other problems. It is not necessary for one embodiment to solve all of these problems. The subject matter will be self-evident from the description, drawings, claims, etc. Other issues can be extracted from the drawings, claims, etc. [Means for solving the problem]

[0012] One aspect of the present invention is a semiconductor device having a first substrate, a first conductive layer, a second conductive layer, and an insulating layer. The first conductive layer is a region located between the first substrate and the second conductive layer. The insulating layer has a region located between the first conductive layer and the second conductive layer. The first conductive layer, the second conductive layer, and the insulating layer form a capacitor. The second conductive layer has an opening. The opening in the second conductive layer and the first conductive layer have an overlapping area.

[0013] In the above, a first transistor is electrically connected to the first conductive layer. is preferred.

[0014] Another embodiment of the present invention is a display device including the above touch sensor, a second substrate, a display element, and a first The touch panel has a first layer and a second layer. The second substrate is in contact with the first substrate. The display element, the first layer, and the second layer are disposed between the first substrate and the second substrate. The first layer has a function of transmitting light of a specific wavelength band and a display layer. The first layer has a region overlapping with the element. The second layer has a function of blocking visible light. The conductive layer has an area that overlaps with the first layer and an area that overlaps with the second layer. The second conductive layer has an area where it overlaps with the second layer. The opening in the second conductive layer and the first layer overlap each other. Has an area.

[0015] In the above, the display element is preferably a light-emitting element.

[0016] In the above, it is preferable that the first substrate and the second substrate each have flexibility. I wish.

[0017] Another aspect of the present invention is a method for manufacturing a touch sensor comprising: and a first FPC having a first conductive layer or A touch sensor module having a function of supplying a signal to at least one of the second conductive layers. It is.

[0018] Another aspect of the present invention is a touch panel comprising the above-mentioned touch panel, a second FPC, and a third FPC. and the second FPC transmits a signal to at least one of the first conductive layer and the second conductive layer. The third FPC has a function of supplying a signal to the display element. It is a panel module.

[0019] Another aspect of the present invention is the touch sensor module or the touch panel. A module is an electronic device housed within a housing. Effect of the Invention

[0020] According to one aspect of the present invention, it is possible to improve the detection sensitivity of a touch panel. This can improve the visibility of the touch panel. Alternatively, a lightweight touch panel can be provided. Alternatively, a highly reliable touch panel can be provided. This allows us to provide a high-quality touch panel.

[0021] Alternatively, a novel input device can be provided. Alternatively, a novel input / output device can be provided. However, the description of these effects does not preclude the existence of other effects. It is not necessary for the present invention to have all of these effects. Effects other than these may be clearly understood. The above is self-evident from the description, drawings, claims, etc. It is possible to extract other effects from the description of the claims, etc. [Brief description of the drawings]

[0022] [Figure 1] 3 shows a configuration example of a touch panel module according to an embodiment. [Diagram 2] 4 shows an example of a laminated structure of a touch panel module according to an embodiment. [Diagram 3] 4 shows an example of a laminated structure of a touch panel module according to an embodiment. [Figure 4] 4 shows an example of a laminated structure of a touch panel module according to an embodiment. [Diagram 5] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 6] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 7] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 8] 3 shows a configuration example of a touch panel module according to an embodiment. [Figure 9]1A to 1C are a block diagram, a circuit diagram, and a timing chart of a touch panel according to an embodiment. [Figure 10] 1A and 1B are a circuit diagram and a schematic diagram of a configuration of a touch panel according to an embodiment. [Figure 11] 1A and 1B are a block diagram and a circuit diagram of a configuration of a touch panel according to an embodiment. [Figure 12] FIG. 2 is a circuit diagram of a configuration of a touch panel according to an embodiment. [Figure 13] 3 shows a configuration example of a touch panel according to an embodiment. [Figure 14] 1A to 1C are diagrams illustrating a method for driving a touch panel according to an embodiment. [Figure 15] 1 is an electronic device according to an embodiment. [Figure 16] 1 is an electronic device according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the present invention can be realized by the following embodiments. The present disclosure should not be construed as being limited to the contents of the preceding paragraph.

[0024] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and the repeated explanations are omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be used.

[0025] In each figure described in this specification, the size, layer thickness, or area of ​​each component is indicated by the following formula: The figures may be exaggerated for clarity and are not necessarily limited to scale. stomach.

[0026] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components. The numbers are added for the purpose of convenience and are not intended to be limiting.

[0027] A transistor is a type of semiconductor device that controls the amplification of current or voltage and the conduction or non-conduction of electricity. In this specification, the transistor can realize a switching operation that controls the , IGFET(Insulated Gate Field Effect Trans istor) and thin film transistor (TFT: Thin Film Transistor ).

[0028] The words "membrane" and "layer" may be interchangeable depending on the circumstances. For example, the term "conductive layer" may be replaced with "conductive Alternatively, for example, the term "insulating film" may be used. In some cases, the terminology may be changed to the term "insulating layer."

[0029] (Embodiment 1) In this embodiment, a touch sensor according to one embodiment of the present invention and a touch sensor including a touch sensor will be described. The configuration examples of the touch panel, the touch panel module, and the like will be described. In the following, we will explain the case where a capacitive touch sensor is used as the touch sensor. Reveal.

[0030] In this specification, the substrate having the touch sensor is provided with, for example, an FPC or TCP ( Tape Carrier Package) and other connectors attached, Or, IC (integrated circuit) is directly mounted on the board using COG (Chip On Glass) method. The mounted device is sometimes called a touch sensor module. A device that has both the function of touching and the function of displaying images, etc. is called a touch panel (input / output device). In addition, touch panels with the above connectors or I The device in which C is implemented is sometimes called a touch panel module, or simply a touch panel. do.

[0031] A capacitive touch sensor that can be applied to one embodiment of the present invention includes a capacitive element. The capacitance element may be, for example, a first conductive layer, a second conductive layer, and an insulating layer sandwiched between them. In this case, the first conductive layer and the second conductive layer may have a laminated structure. Each layer functions as an electrode of the capacitive element, and the insulating layer functions as a dielectric.

[0032] Of the first conductive layer and the second conductive layer, the first conductive layer is provided on the touch surface (detection surface) side. The touch sensor according to one embodiment of the present invention includes a detection object such as a finger or a stylus, and a first conductive layer. By detecting the capacitance formed between the electrode and the conductive layer, the touch operation can be detected. Specifically, when a predetermined potential difference is applied between the first conductive layer and the second conductive layer, detecting a change in potential of the first conductive layer caused by a capacitance formed by the switching operation; A touch operation can be detected.

[0033] Here, in the region where the touch sensor performs the touch detection function, the surface of the second conductive layer It is preferable to make the area of ​​the first conductive layer larger than the area of ​​the first conductive layer. The capacitance between the first conductive layer and the second conductive layer can be reduced. By increasing the capacitance between the object to be detected and the first conductive layer, the capacitance can be increased. As a result, the change in the potential of the first conductive layer during a touch operation can be reduced significantly. Therefore, it is possible to increase the detection sensitivity.

[0034] For example, the second conductive layer may have an opening, and the opening and the first conductive layer may overlap each other. It is preferable to arrange the first conductive layer and the second conductive layer so that the first conductive layer and the second conductive layer are arranged so as to form a first conductive layer and a second conductive layer. The value of the capacitance formed between the second conductive layer and the second conductive layer can be changed by changing the number and area of ​​the openings provided in the second conductive layer. By changing the thickness of the insulation layer, it is possible to easily change the material. do.

[0035] In addition, the touch sensor of one embodiment of the present invention may be used in a display panel having a pixel including a display element. In this case, the opening of the second conductive layer is By providing the second conductive layer so as to overlap with the display element, light from the display element passes through the second conductive layer. This eliminates the need for a touch panel, which improves the brightness and visibility of images displayed on the touch panel. In addition, the touch panel is made up of a color filter (also called a colored layer) that overlaps the display element and a In the case of a configuration including a light-shielding layer provided between adjacent color filters, the second conductive layer is shielded. It is preferable that the opening of the second conductive layer is provided so as to overlap the color filter. I wish.

[0036] At this time, the substrate supporting the touch sensor and the substrate supporting the display element are placed opposite each other. It is preferable that the touch panel of the present invention has a touch panel having a touch panel. Since the area of ​​the second conductive layer arranged on the display element side of the switch sensor is small, the display element is driven by the Therefore, the touch sensor and the display are mounted on two boards. Even if the detection elements are sandwiched and arranged closely together, the decrease in detection sensitivity can be suppressed. As a result, the thickness of the touch panel can be reduced. By using flexible materials, it is possible to create a thin, lightweight and flexible touch panel. It can be achieved.

[0037] Hereinafter, a more specific configuration example of one embodiment of the present invention will be described with reference to the drawings.

[0038] [Configuration example] FIG. 1(A) is a schematic perspective view of a touch panel module 10 according to an embodiment of the present invention. FIG. 1B is a perspective schematic view of the touch panel module 10 when it is unfolded. The touch panel module 10 is a touch sensor module 20 and a display panel 30 stacked on top of each other. The configuration is arranged as follows.

[0039] The touch sensor module 20 includes a sensor element (also called a detection element) on a first substrate 21. The touch sensor has a structure in which an FPC 41 is provided on the touch sensor having the sensor element 22. A plurality of the electrodes are arranged in a matrix on the first substrate 21. , and a circuit 23 and a circuit 24 electrically connected to the sensor element 22. At least one of the circuits 23 and 24 has a function of selecting a plurality of sensor elements 22. In addition, at least one of the circuit 23 and the circuit 24 may be a A circuit having a function of outputting a signal from the sensor element 22 can be applied. 1 supplies a signal from the outside to at least one of the sensor element 22, the circuit 23, and the circuit 24. Alternatively, the FPC 41 may be a part of the sensor element 22, the circuit 23, and the circuit 24. At the very least, it has the function of outputting a signal from the input terminal to the outside.

[0040] The display panel 30 has a display section 32 on a second substrate 31. The display section 32 has a matrix. The second substrate 31 has a plurality of pixels 33 arranged in a shape of a pixel. It is preferable to provide a circuit 34 electrically connected to the element 33. The circuit 34 may be, for example, a gate A circuit that functions as a driver circuit can be applied. At least one of the circuits 34 has a function of supplying a signal from the outside. 1B shows a configuration in which the second substrate 31 is provided with a terminal 43. The terminal 43 may be, for example, For example, attach an FPC and use an IC that functions as a source driver circuit in a COG or CO Direct mounting using the F method, or removing FPC, TAB, TCP, etc. with IC mounted. In addition, the display panel 30 may be provided with connectors such as IC and FPC. The mounted form can also be called a display panel module.

[0041] The touch panel module 10 according to one embodiment of the present invention detects touch signals by using a plurality of sensor elements 22. The display unit 3 can output position information based on the change in capacitance when an action is performed. 2 allows you to display images.

[0042] [About the layered structure of touch panels] FIG. 2(A) is an enlarged schematic diagram of the area indicated by the dashed line in FIG. 1(A).

[0043] FIG. 2A shows a capacitance element 110, a pixel 33, and an array included in the sensor element 22 shown in FIG. An example in which a line 25 and a wiring 26 are provided is shown.

[0044] A plurality of capacitance elements 110 are arranged in a matrix. The wiring 26 is disposed between the capacitance elements 110, and a plurality of wirings 26 are disposed in a direction intersecting the wiring 25. There are.

[0045] A plurality of pixels 33 are arranged in a matrix. is provided so as to overlap the capacitance element 110, and the other part is provided between two adjacent capacitance elements 110. It is provided so as to overlap with the area.

[0046] The pixel 33 includes at least a display element. The display element may be, for example, an organic electroluminescence (EL It is preferable to use a light-emitting element such as an ectroluminescence element. In addition, there are electrophoretic, electronic powder, and electro Display elements that display images using the wetting method (also called electronic ink), shutters Various display elements, such as MEMS display elements using the optical interference method, MEMS display elements using the optical interference method, and liquid crystal elements, Children can be used.

[0047] Also, transmissive LCDs, semi-transmissive LCDs, and reflective LCDs It can also be applied to semi-transmissive LCDs and reflective LCDs. In order to realize a liquid crystal display, a part or all of the pixel electrodes are used as a reflective electrode. For example, a part or the whole of the pixel electrode may be made of aluminum. In this case, a memory such as an SRAM may be provided under the reflective electrode. It is also possible to provide a memory circuit, which can further reduce power consumption. In addition, a suitable configuration for the display element to be applied can be selected from various pixel circuits. do.

[0048] FIG. 2B is a schematic diagram showing the laminated structure in the area overlapping with the capacitor element 110. As shown in FIG. 2B, a first conductive layer is provided between the first substrate 21 and the second substrate 31. 111, insulating layer 112, second conductive layer 113, light-shielding layer 115, colored layers 114r and 114g , 114b, and pixel 33 are arranged.

[0049] In the following description, the colored layers 114r, 114g, and 114b will not be distinguished from each other. In the description of matters common to these layers, the term "colored layer 114" may be used. be.

[0050] An insulating layer 112 is sandwiched between a first conductive layer 111 and a second conductive layer 113. This constitutes a capacitive element 110 .

[0051] Each colored layer 114 has a function of transmitting light in a specific wavelength band. The colored layer 114r transmits red light, the colored layer 114g transmits green light, and the colored layer 114b transmits blue light. The pixel 33 and one of the colored layers 114 are arranged to overlap each other, Only light of a specific wavelength band from the element 33 can be transmitted to the first substrate 21 side. Cut.

[0052] The light-shielding layer 115 has a function of blocking visible light. The light-shielding layer 115 is disposed so as to overlap the area between the color layers 114. In FIG. The opening is arranged so as to overlap the pixel 33 and the colored layer 114. This shows an example of

[0053] In FIG. 2B, the light-shielding layer 115 is disposed closer to the first substrate 21 than the colored layer 114. However, the colored layer 114 may be disposed closer to the first substrate 21 than the light-shielding layer 115. good.

[0054] The first conductive layer 111 and the insulating layer 112 overlap the pixels 33 and the colored layer 114, respectively. Therefore, the first conductive layer 111 and the insulating layer 112 are It is preferable to use a material that transmits visible light.

[0055] The second conductive layer 113 has a plurality of openings 118. This allows the first conductive layer 111 and The area where the second conductive layer 113 overlaps with the first conductive layer 114 can be reduced. As shown in FIG. 1, the openings 118 of the second conductive layer 113 are arranged to overlap the pixels 33. In addition, the second conductive layer 113 and the light-shielding layer 115 are preferably disposed so as to overlap each other. This allows the light from the pixel 33 to pass through the second conductive layer 113. Since the light is emitted to the first substrate 21 side without being reflected, the decrease in brightness is suppressed, and the touch panel has excellent visibility. In addition, the light extraction efficiency is improved, allowing for low power consumption touch panels. It can be achieved.

[0056] 3A to 3C show the second conductive layer 113 and the shielding layer in the area overlapping the display unit 32. Examples of each shape of the optical layer 115 are shown.

[0057] As shown in FIG. 3A, the upper surface shape of the opening 118 of the second conductive layer 113 and the light shielding layer 115 The upper surface shape of the opening may be arranged so as to roughly match the upper surface shape of the opening shown in FIG. As shown in FIG. 1, the second conductive layer 113 is positioned inside the light shielding layer 115. Even if the size of the opening 118 of the light-shielding layer 113 is made larger than the size of the opening of the light-shielding layer 115, This can reduce the influence of relative positional deviation of the second conductive layer 113 and the light-shielding layer 115. In addition, as shown in FIG. 3C, the second conductive layer 113 can be provided with a light-shielding layer 1 The size of the opening 118 is set to the same as that of the opening of the light-shielding layer 115 so that a portion that does not overlap with the light-shielding layer 115 is formed. The second conductive layer 113 may be formed in a shape smaller than the size of the first conductive layer 113. The width of the second conductive layer 113 can be increased, and the conductivity can be improved. If the second conductive layer 113 is thin, the second conductive layer 113 may be thin when viewed from the first substrate 21 side. This can make the conductive layer 113 less visible.

[0058] If the second conductive layer 113 is made of a material that transmits visible light, the first substrate 21 side This is preferable because it makes the image less visible from the outside and therefore prevents a decrease in display quality.

[0059] As shown in FIGS. 3A and 3B, the second conductive layer 113 is hidden by the light shielding layer 115. In this case, the second conductive layer 113 does not block the light from the pixel 33. In addition to conductive materials with light-transmitting properties, conductive materials with light-shielding properties such as metals and alloys are used. In particular, the wiring resistance can be reduced by using a conductive material with low resistance. Therefore, it is suitable for a large touch panel.

[0060] FIG. 4 shows a case where an optical adjustment layer 119 is disposed between two adjacent first conductive layers 111. This indicates a match.

[0061] By providing the optical adjustment layer 119, when viewed from the first substrate 21 side, the first conductive layer The 111 pattern becomes less visible, and the display quality can be improved.

[0062] The optical adjustment layer 119 is preferably a layer having optical properties (transmittance, refractive index, reflectance, etc.) similar to those of the first conductive layer 111. For example, a material having a transmittance equal to or larger than that of the first conductive layer 111 can be used. In particular, the optical adjustment layer 119 can be made of a material having a coefficient of reflection within ±5%. It is preferable to use the same material as the first conductive layer 111. By processing the above, the first conductive layer 111 and the optical adjustment layer 119 are simultaneously formed, This is preferable because these thicknesses can be made equal and the process can be simplified.

[0063] When a conductive material is used as the optical adjustment layer 119, a predetermined electric field is applied to the optical adjustment layer 119. For example, a fixed potential such as a common potential or a ground potential can be supplied. A constant potential may be supplied to the optical adjustment layer 119. Alternatively, the first conductive layer 112 may be electrically connected to either the first conductive layer 113 or the second conductive layer 114 .

[0064] FIG. 5A shows a wiring 25, a wiring 26, a first conductive layer 111, and an optical adjustment layer 119. The respective top surface shapes are shown as examples when viewed from the first substrate 21 side.

[0065] As shown in FIG. 5A, the wiring 25 and the plurality of wirings 26 are each formed by applying the same conductive film. In this case, the first substrate 21 is preferably configured to include a conductive layer obtained by the above-mentioned process. It is preferable to use a conductive layer provided on the side of the wiring 25 or wiring 2. 6 and the first conductive layer 111. This can reduce the parasitic capacitance generated between the conductive layer 111 and the semiconductor device 100, thereby improving the detection sensitivity. can.

[0066] In addition, at the intersection of the wiring 25 and the wiring 26, the wiring 26 is opposite to the first substrate 21 of the wiring 25. A conductive layer 117 is provided on the opposite side via an insulating layer, and a conductive layer 118 is provided through an opening in the insulating layer. At this time, the conductive layer 117 and the optical adjustment layer 119 are formed in the area where the conductive layer 117 and the wiring 25 overlap. If the first conductive layer 111 and the like are not provided, the parasitic capacitance of the wiring 26 is reduced, and the detection This is preferable since it is possible to increase the sensitivity.

[0067] In addition, in FIG. 5B, a transistor 120 including a semiconductor layer 121 is provided. 5B, the first substrate 21 side of the semiconductor layer 121 is It is preferable to place a light-shielding layer such as a conductive layer that constitutes the wiring 26 on the substrate. In this case, a part of the wiring 26 can function as a gate electrode of a transistor. In this way, the external light that has passed through the first substrate 21 is not irradiated onto the semiconductor layer 121. In particular, the area overlapping with the display unit 32 is prevented from fluctuating. Since the transistors are easily affected by external light, It is preferred to apply

[0068] [Cross-section example] An example of the cross-sectional configuration of the touch panel module 10 will be described below.

[0069] [Cross-sectional configuration example 1] FIG. 6(A) shows a schematic cross-sectional view of a touch panel module according to one embodiment of the present invention. The touch panel module shown in A) is an active matrix type touch panel between a pair of substrates. Since the display device has a switch sensor and a display element, it can be made thinner. The touch sensor, in which each of the plurality of sensor elements has an active element, is called an active matrix. This is called a touch sensor using the touch sensor technology.

[0070] The touch panel module is configured such that the first substrate 21 and the second substrate 31 are bonded to each other by an adhesive layer 220. The first substrate 21 has a capacitance element 110 on the second substrate 31 side. , transistor 251, transistor 252, contact portion 253, colored layer 114, light shielding A layer 115 and the like are provided on the second substrate 31. A transistor 201, a transistor A resistor 202, a transistor 203, a light emitting element 204, a contact portion 205, etc. are provided. is.

[0071] On the second substrate 31, an insulating layer 212, an insulating layer 213, and an insulating layer 214 are formed via an adhesive layer 211. 4, insulating layer 215, insulating layer 216, insulating layer 217, insulating layer 218, spacer 219, conductive layer 225, etc.

[0072] The light emitting element 204 is provided on the insulating layer 217. The light emitting element 204 has a first electrode 2 21, an EL layer 222, and a second electrode 223 (see FIG. 6(B)). An optical adjustment layer 224 is provided between the insulating layer 218 and the EL layer 222. It is provided to cover the ends of the first electrode 221 and the optical adjustment layer 224 .

[0073] In FIG. 6A, a pixel 33 includes a transistor 201 for current control and a transistor 202 for switching control. The transistor 201 has a source or One of the drains is electrically connected to the first electrode 221 via a conductive layer 225 .

[0074] FIG. 6A shows a configuration in which a transistor 203 is provided in the circuit 34.

[0075] In FIG. 6A, a transistor 201 and a transistor 203 are formed with a channel. This shows an example in which a semiconductor layer formed by the above-mentioned method is sandwiched between two gate electrodes. Such a transistor can have a higher field effect mobility than other transistors. This increases the on-current, making it possible to fabricate circuits capable of high-speed operation. Furthermore, it is possible to reduce the area occupied by the circuit section. By applying transistors, display panels or touch panels can be made larger or have higher resolution. Even if the number of wirings increases when the circuit is integrated, it is possible to reduce the signal delay in each wiring. Therefore, it is possible to suppress display unevenness.

[0076] Note that the transistors in the circuit 34 and the transistors in the pixel 33 have the same structure. In addition, the transistors in the circuit 34 may all have the same structure. Transistors of different structures may be used in combination. The transistors may be of the same structure or may be of different structures. In addition, the transistors (transistor 251, transistor The transistors (e.g., transistor 252) may have the same structure or may have different structures. The above data may be used in combination.

[0077] FIG. 6A shows a case where a light emitting element having a top emission structure is used as the light emitting element 204. The light-emitting element 204 emits light toward the second electrode 223. The transistor 201 is disposed on the light emitting region of the transistor 04 and is disposed on the second substrate 31 side. In addition to the stator 202, a capacitance element, wiring, etc. are arranged to increase the aperture ratio of the pixel 33. This can be done.

[0078] On the second substrate 31 side of the first substrate 21, an insulating layer 262 and an insulating layer 263, insulating layer 264, insulating layer 265, first conductive layer 111, insulating layer 112, second conductive The insulating layer 266 includes a colored layer 114 and a light-shielding layer 115. An overcoat 267 may be provided to cover the light-shielding layer 115 .

[0079] The first conductive layer 111 is electrically connected to one of the source and drain of the transistor 251. do.

[0080] The second conductive layer 113 is provided on the second substrate 31 side of the insulating layer 112. The second conductive layer 113 has an opening 118. The second conductive layer 113 is provided to overlap the light shielding layer 115. The opening 118 of the second conductive layer 113 is provided so as to overlap the colored layer 114. do.

[0081] The light-emitting region of the light-emitting element 204 and the colored layer 114 are provided on top of each other. The light emitted from the second conductive layer 113 passes through the colored layer 114 and is emitted to the first substrate 21 side. The opening 118 of the conductive layer 113 is provided so as to overlap with the colored layer 114, and the emitted light passes through the second conductive layer Since there is no need for the light to pass through the first substrate 21, the decrease in brightness of the light emitted from the first substrate 21 side is suppressed. It can be controlled.

[0082] By using a flexible material for the first substrate 21 and the second substrate 31, This makes it possible to realize a simple touch panel.

[0083] In addition, the touch panel of one embodiment of the present invention uses a color filter. Layer 114 is a three-color pixel to which any one of R (red), G (green), and B (blue) is applied. In addition, it is also possible to use a configuration in which W (white) and Y (yellow) are displayed in addition to the above. The present invention may be applied to a configuration in which the above-mentioned elements are applied.

[0084] The combination of the colored layer 114 and the microcavity structure of the optical adjustment layer 224 In this manner, light with high color purity can be extracted from the touch panel of one embodiment of the present invention. The thickness of the adjustment layer 224 may be different depending on the color of each pixel. Alternatively, the optical adjustment layer 224 may not be provided.

[0085] In addition, an EL layer that emits white light is applied as the EL layer 222 included in the light emitting element 204. By applying such a light-emitting element 204, the EL layer 222 is applied to each pixel. This reduces costs and makes it easier to achieve high resolution. By changing the thickness of the optical adjustment layer 224 in each pixel, it is possible to emit light of a wavelength suitable for each pixel. The EL layer 222 can be extracted from each pixel, and the color purity can be improved. In this case, the optical adjustment layer 224 and the colored layer 114 are not required. It is also possible to adopt a different configuration.

[0086] Each insulating layer located in an area overlapping the contact portion 205 provided on the second substrate 31 An opening is provided in the contact portion 205 and the contact layer 260 is disposed in the opening. The insulating film 41 is electrically connected to the first substrate 21. An opening is provided in the edge layer, etc., and the contact portion 2 is connected to the connection layer 210 via the connection layer 210 disposed in the opening. 53 and FPC 42 are electrically connected.

[0087] In FIG. 6A, the contact portion 205 is connected to the source electrode and the drain electrode of the transistor. The structure shows a conductive layer formed by processing the same conductive film. 253 is a conductive layer formed by processing the same conductive film as the gate electrode of the transistor. A conductive layer formed by processing the same conductive film as the source electrode and drain electrode of the transistor, and the second conductive layer 113. In this way, the contact part is structured by stacking multiple conductive layers. This is preferable because it can not only reduce the electrical resistance but also increase the mechanical strength.

[0088] The connection layer 210 and the connection layer 260 are made of anisotropic conductive film (ACF). Anisotropic Conductive Film and Anisotropic Conductive Paste (ACP) sotropic conductive paste) can be used.

[0089] The insulating layer 212 and the insulating layer 262 are made of a material that is difficult for impurities such as water and hydrogen to diffuse. That is, the insulating layer 212 and the insulating layer 262 preferably function as a barrier film. With such a configuration, the first substrate 21 and the second substrate 31 can be Even if a material having moisture permeability is used, the light emitting element 204 and each transistor are It is possible to effectively prevent the diffusion of impurities from the touch panel, resulting in a highly reliable touch panel. This can be achieved.

[0090] [About each component] Each of the above components will be described below.

[0091] The transistor includes a conductive layer functioning as a gate electrode, a semiconductor layer, and a A conductive layer that functions as a drain electrode and a conductive layer that functions as a gate insulating layer. FIG. 6A shows a case where a bottom-gate transistor is applied. This shows that.

[0092] Note that there is no particular limitation on the structure of a transistor included in a touch panel of one embodiment of the present invention. For example, the transistor may be a staggered type transistor or an inverted staggered type transistor. In addition, the transistor structure may be either a top gate type or a bottom gate type. The semiconductor material used for the transistor is not particularly limited, and may be, for example, an oxide semiconductor, a silicon Examples of such elements include silicon and germanium.

[0093] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region) If a semiconductor having crystallinity is used, the This is preferable because it is possible to suppress deterioration of the resistor characteristics.

[0094] In addition, the semiconductor materials used in transistors include, for example, group 4 elements and compound semiconductors. Alternatively, an oxide semiconductor can be used for the semiconductor layer. Typically, a semiconductor containing silicon A semiconductor containing gallium arsenide, an oxide semiconductor containing indium, or the like can be used.

[0095] In particular, an oxide semiconductor can be used as a semiconductor in which a channel of a transistor is formed. It is particularly preferable to use an oxide semiconductor having a larger band gap than silicon. A semiconductor material with a wider band gap and lower carrier density than silicon is preferable. The use of such a compound is preferable because it can reduce the current in the off state of the transistor.

[0096] For example, the oxide semiconductor may contain at least indium (In) or zinc (Zn It is preferable that the oxide contains In-M-Zn (wherein M is Al, Ti, Metals such as Ga, Ge, Y, Zr, Sn, La, Ce or Hf) are included. nothing.

[0097] In particular, the semiconductor layer has a plurality of crystal parts, and the crystal parts have a c-axis aligned with a surface on which the semiconductor layer is formed. Or, the crystals are oriented approximately perpendicular to the upper surface of the semiconductor layer, and grain boundaries are observed between adjacent crystal portions. It is preferable to use an oxide semiconductor film that is not subject to the above-mentioned conditions.

[0098] Such an oxide semiconductor does not have crystal grain boundaries, so that when the display panel is curved, The occurrence of cracks in the oxide semiconductor film due to stress is suppressed. Such oxide semiconductors are suitable for use in touch panels that are flexible and can be curved. It can be used.

[0099] In addition, by using such an oxide semiconductor as the semiconductor layer, the fluctuation of the electrical characteristics is suppressed. This makes it possible to realize a highly reliable transistor.

[0100] In addition, due to its low off-state current, the charge stored in the capacitance through the transistor can be released for a long period of time. By applying such a transistor to a pixel, It is also possible to stop the driving circuit while maintaining the grayscale of the image displayed in the display area. As a result, a display device with extremely reduced power consumption can be realized.

[0101] Alternatively, silicon is preferably used as a semiconductor in which a channel of a transistor is formed. Although amorphous silicon may be used as silicon, silicon having crystallinity is particularly preferred. It is preferable to use silicon. For example, microcrystalline silicon, polycrystalline silicon, single crystal silicon, etc. In particular, polycrystalline silicon has a lower temperature than single crystal silicon. It has high field effect mobility and high reliability compared to amorphous silicon. By applying such a polycrystalline semiconductor to the pixels, the aperture ratio of the pixels can be improved. Even when the pixels are extremely fine, the gate drive circuit and the source drive circuit can be This makes it possible to form the circuits and pixels on the same substrate, reducing the number of parts that make up electronic devices. It is possible.

[0102] In addition to the gate, source, and drain of the transistor, the various wiring that makes up the touch panel Materials that can be used for conductive layers such as wires and electrodes include aluminum, titanium, Chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, The material is a single-layer or multi-layer structure made of metal such as tungsten or an alloy that contains this metal as its main component. For example, a single layer structure of aluminum film containing silicon, aluminum on titanium film, A two-layer structure in which an aluminum film is laminated on a tungsten film; a two-layer structure in which an aluminum film is laminated on a tungsten film; - Two-layer structure with copper film laminated on magnesium-aluminum alloy film, copper film laminated on titanium film Two-layer structure with copper film laminated on tungsten film, two-layer structure with titanium film or titanium nitride film laminated on tungsten film A titanium film and an aluminum film or a copper film are laminated on the titanium film or the titanium nitride film. A three-layer structure is formed by forming a titanium film or titanium nitride film on the top of the molybdenum film or The molybdenum nitride film is laminated with an aluminum film on the molybdenum film or the molybdenum nitride film. A molybdenum film or a copper film is laminated on the copper film, and a molybdenum film or a molybdenum nitride film is further formed on the copper film. Transparent conductive materials containing indium oxide, tin oxide, or zinc oxide are also used. In addition, when copper containing manganese is used, the shape can be easily controlled by etching. This is preferable because it increases the

[0103] Examples of the conductive material having a light-transmitting property include indium oxide, indium tin oxide, and indium tin oxide. Conductive oxides such as indium zinc oxide, zinc oxide, zinc oxide doped with gallium, or Graphene can be used. Alternatively, gold, silver, platinum, magnesium, nickel, tin, etc. such as tin, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium. Metallic materials and alloy materials containing the metallic materials can be used. Alternatively, a metal material, an alloy material (or a combination thereof) may be used. In the case of using these nitrides, it is sufficient to make them thin enough to have light transmission. A laminated film of a material can be used as the conductive layer. For example, a silver-magnesium alloy and an insulator can be used. It is preferable to use a laminated film of di- um tin oxide or the like because the electrical conductivity can be increased.

[0104] Insulating materials that can be used for each insulating layer, the overcoat 267, the spacer 219, etc. Examples of the resin include acrylic and epoxy resins, resins having siloxane bonds, and acids. Silicon nitride, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, etc. Any inorganic insulating material may be used.

[0105] As described above, the light emitting element is provided between a pair of insulating films having low water permeability. This makes it possible to prevent impurities such as water from entering the light emitting element, and thus the light emitting device This can suppress the deterioration of reliability.

[0106] Insulating films with low water permeability include silicon nitride films and silicon oxynitride films, which are made of nitrogen and silicon. and films containing nitrogen and aluminum, such as an aluminum nitride film. A silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may also be used.

[0107] For example, the water vapor permeability of a low-permeability insulating film is 1×10 -5 [g / (m 2 ·day) ] or less, preferably 1 × 10 -6 [g / (m 2 ·day)] or less, preferably 1×1 0 -7 [g / (m 2 ·day)] or less, and more preferably 1×10 -8 [g / (m 2 d ay)] below.

[0108] Each adhesive layer is made of a hardening resin such as a thermosetting resin, a photocurable resin, or a two-liquid mixed hardening resin. For example, acrylic, urethane, epoxy, or siloxane resins can be used. Resins having such a structure can be used.

[0109] The EL layer 222 has at least a light-emitting layer. The EL layer 222 has the following layers other than the light-emitting layer: Materials with high hole injection properties, materials with high hole transport properties, hole blocking materials, materials with high electron transport properties A material with high electron injection properties or a bipolar material (high electron transport and hole transport properties) The layer may further include a layer containing a material such as a metal.

[0110] The EL layer 222 can be made of either a low molecular weight compound or a high molecular weight compound. The layers constituting the EL layer 222 may each be formed by deposition (vacuum deposition). It can be formed by methods such as the transfer method, printing method, inkjet method, coating method, etc. Cut.

[0111] Materials that can be used for the light-shielding layer 115 include carbon black, metal oxides, and composites. and composite oxides including solid solutions of several metal oxides.

[0112] Materials that can be used for the colored layer 114 include metal materials, resin materials, pigments, and dyes. and resin materials containing

[0113] [Example of manufacturing method] Here, a method for producing a flexible touch panel will be described.

[0114] For the sake of convenience, the term "component including pixels and circuits," "component including optical members such as color filters," and "component including optical members such as color filters" are used herein. A configuration including a touch sensor is referred to as an element layer. The element layer includes, for example, a display element. In addition to display elements, wiring electrically connecting to display elements, transistors used in pixels and circuits, etc. The device may include the following elements:

[0115] Here, a support (for example, a first substrate 21 or The first substrate 31 or the second substrate 32 will be referred to as a base material.

[0116] As a method for forming an element layer on a substrate having a flexible insulating surface, A method for forming a contact layer, and a method for forming the contact layer on a rigid support substrate and then bonding the contact layer to the support substrate. and a method of peeling off the support substrate and transferring the element layer onto the substrate.

[0117] When the material constituting the base material has heat resistance against the heat applied in the process of forming the element layer, It is preferable to form the element layer directly on the substrate, since this simplifies the process. When the element layer is formed in a state where the substrate is fixed to a supporting substrate, the substrate can be easily transported within and between devices. This is preferable because it makes things easier.

[0118] In addition, when a method is used in which an element layer is formed on a supporting substrate and then transferred to the substrate, the supporting substrate is first A release layer and an insulating layer are laminated on the support substrate, and an element layer is formed on the insulating layer. The support substrate and the element layer are peeled off and transferred to the substrate. Materials may be selected such that release occurs at the edge layer interface or in the release layer.

[0119] For example, a layer containing a high melting point metal material such as tungsten as a peeling layer and an oxide layer of the metal material A layer including a substance is laminated, and a layer in which silicon nitride or silicon oxynitride is laminated on a peeling layer It is preferable to use a high melting point metal material. This is preferable.

[0120] Peeling can be achieved by applying mechanical force, etching the peeling layer, or by delaminating the peeling interface. The peeling may be performed by dropping a liquid on a portion of the surface and allowing it to penetrate into the entire peeling interface. Alternatively, the peeling may be performed by applying heat to the peeling interface, utilizing the difference in thermal expansion.

[0121] In addition, when peeling is possible at the interface between the support substrate and the insulating layer, it is not necessary to provide a peeling layer. For example, glass is used as the support substrate, and an organic resin such as polyimide is used as the insulating layer. A part of the organic resin is locally heated using a laser beam or the like to form a peeling starting point. The separation may be performed at the interface between the glass and the insulating layer. Providing a metal layer between the edge layers and heating the metal layer by passing an electric current through the metal layer. The metal layer and the insulating layer may be peeled off at the interface by using an organic resin. The insulating layer can be used as a substrate.

[0122] Examples of flexible substrates include polyethylene terephthalate (PET), poly Polyester resins such as ethylene naphthalate (PEN), polyacrylonitrile resins, Polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethylene Polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene Resins, polyamide-imide resins, polyvinyl chloride resins, etc. are examples. In particular, It is preferable to use a material with a low thermal expansion coefficient, for example, 30×10 -6 / K or less Polyamide-imide resin, polyimide resin, PET, etc. can be suitably used. Substrates made of resin-impregnated fibers (also called prepregs) and inorganic fillers mixed with organic resins It is also possible to use a substrate having a reduced thermal expansion coefficient.

[0123] When the above-mentioned materials contain fibrous bodies, the fibrous bodies are made of high strength organic or inorganic compounds. High strength fibers are specifically fibers with high tensile modulus or Young's modulus. Representative examples are polyvinyl alcohol fibers, polyester fibers, and polyvinyl alcohol fibers. Mid fiber, polyethylene fiber, aramid fiber, polyparaphenylene benzobisoxy Examples of the fiberglass include Sasol fiber, glass fiber, and carbon fiber. Examples of glass fibers include those made of glass fiber such as sappan, S-glass, D-glass, and Q-glass. Alternatively, it is used in the form of a nonwoven fabric, and the structure in which the fiber body is impregnated with resin and the resin is hardened is made flexible. As a substrate having flexibility, a substrate made of a fiber body and a resin may be used. The use of a structure is preferable because it improves reliability against damage caused by bending or local pressure. stomach.

[0124] Alternatively, a thin glass or metal having flexibility may be used as the substrate. Alternatively, a composite material in which glass and a resin material are bonded together may be used.

[0125] For example, in the case of the configuration shown in FIG. 6(A), a first release layer and an insulating layer 26 are formed on a first support base material. 2 is formed in order, and then the upper layer structure is formed. After forming the second release layer and the insulating layer 212 in this order on the support substrate, the structure above them is Next, the first support substrate and the second support substrate are bonded together with an adhesive layer 220. Thereafter, the second release layer is peeled off at the interface between the second release layer and the insulating layer 212 to form the second support substrate and The release layer 2 is removed, and the insulating layer 212 and the second substrate 31 are bonded together with the adhesive layer 211. In addition, the first release layer is peeled off at the interface between the first release layer and the insulating layer 262, so that the first support base material and the first The release layer is removed, and the insulating layer 262 and the first substrate 21 are bonded together with the adhesive layer 261 . The peeling and bonding may be performed on either side first.

[0126] The above is a description of the method for producing a flexible touch panel.

[0127] [Cross-sectional configuration example 2] FIG. 7 shows a cross-sectional configuration example that is partially different from that shown in FIG. 6. The configuration shown in FIG. 1. The main difference from the previous configuration is that the configuration of the first conductive layer 111 is different.

[0128] In FIG. 7, a transistor 251 and a transistor 252 are provided instead of the first conductive layer 111 in FIG. A first conductive layer having a semiconductor layer formed by processing the same film as the semiconductor layer of the transistor 252. The first conductive layer 111a is connected to the insulating layer 265. It is set up as such.

[0129] Here, the first conductive layer 111a preferably contains an oxide semiconductor. The resistance can be controlled by adjusting the oxygen vacancies and / or the concentration of impurities such as hydrogen and water in the film. Therefore, the semiconductor layer applied to the first conductive layer 111a and the Even if the semiconductor layer applied to the transistor is formed by processing the same semiconductor film, For each semiconductor layer, a treatment that increases oxygen vacancies and / or impurity concentrations or an oxidation treatment By selectively applying treatments that reduce element deficiencies and / or impurity concentrations, these semiconductors can be The resistivity of the layer can be controlled.

[0130] Specifically, the acid contained in the first conductive layer 111a functioning as an electrode of the capacitor 110 is a plasma treatment is performed on the oxide semiconductor layer to increase oxygen vacancies in the oxide semiconductor layer; or and / or by increasing impurities such as hydrogen and water in the oxide semiconductor layer, the carrier density The first conductive layer 111a can be formed to include an oxide semiconductor having high conductivity and low resistance. An insulating film (insulating layer 265) containing hydrogen is formed in contact with the compound semiconductor layer, and the insulating film containing hydrogen is By diffusing hydrogen from the oxide semiconductor layer to the oxide semiconductor layer, an oxide semiconductor layer with high carrier density and low resistance is obtained. Such an oxide semiconductor layer can be used as the first conductive layer 111a. can be applied.

[0131] On the other hand, an oxide semiconductor layer is formed on the transistor 251 and the transistor 252. In order to prevent the insulating layer 264 from being exposed to the thermal treatment, the insulating layer 264 is provided. Therefore, a structure can be achieved in which the oxide semiconductor layer is not in contact with the insulating layer 265 containing hydrogen. By using an insulating film capable of releasing oxygen as the insulating layer 264, The oxide semiconductor layer to which oxygen is supplied can be Oxygen vacancies in the film or at the interface of the film are reduced, resulting in a high-resistance oxide semiconductor layer. Examples of insulating films capable of releasing oxygen include silicon oxide films and silicon oxynitride films. etc. can be used.

[0132] In addition, the plasma treatment performed on the oxide semiconductor layer is typically performed using a rare gas (He, Ne , Ar, Kr, Xe), phosphorus, boron, hydrogen, and nitrogen. More specifically, plasma treatment in an Ar atmosphere, Plasma treatment in a mixed gas atmosphere of Ar and hydrogen, and plasma treatment in an ammonia atmosphere Plasma treatment in a mixed gas atmosphere of Ar and ammonia, or plasma treatment in a nitrogen atmosphere Examples include processing.

[0133] By the above plasma treatment, the oxide semiconductor layer is formed into a lattice from which oxygen has been desorbed (or Oxygen vacancies are formed in the area where the oxide is removed. These oxygen vacancies are a cause of carrier generation. In addition, in the vicinity of the oxide semiconductor layer, more specifically, in the lower side of the oxide semiconductor layer, Alternatively, hydrogen is supplied from the insulating layer adjacent to the upper side, and when hydrogen enters the oxygen vacancy, the carrier Therefore, the plasma treatment increases the oxygen vacancy. The oxide semiconductor layer applied to the first conductive layer 111a is the same as the oxide semiconductor layer applied to the transistor. The carrier density is higher than that of the solid semiconductor layer.

[0134] On the other hand, the oxide semiconductor applied to the transistor with reduced oxygen vacancies and reduced hydrogen concentration is The oxide semiconductor layer can be said to be a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor layer. The term "substantially intrinsic" means that the carrier density of the oxide semiconductor is less than 1×10 17 / cm 3 Less than Preferably, 1×10 15 / cm 3 More preferably, it is less than 1×10 1 3 / cm 3 Or, it means that the impurity concentration is low and the defect level density is low (oxygen High purity genuine or substantially high purity genuine. In principle, highly pure intrinsic oxide semiconductors have few carrier generation sources, and therefore the carrier density is low. Therefore, a transistor in which a channel region is formed in the oxide semiconductor film can be formed. The threshold voltage of the transistor is positive (also called normally-off characteristic). In addition, a highly-purified intrinsic or substantially highly-purified intrinsic oxide semiconductor layer has a low density of defect states. Since the degree of diffusion is low, the trap state density can be reduced.

[0135] In addition, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor layer has a significantly reduced off-state current. Small, with a channel width of 1×10 6 Even if the element has a channel length L of 10 μm, When the voltage between the source electrode and the drain electrode (drain voltage) is in the range of 1V to 10V, The current is below the measurement limit of the semiconductor parameter analyzer, i.e., 1×10 -13 A and below Therefore, a channel region is formed in the oxide semiconductor layer. The transistors 251 and 252 have small fluctuations in electrical characteristics and are highly reliable. The transistor 201 provided on the second substrate 31 side is a transistor. It is preferable that the transistor 202, the transistor 203, and the like also use a similar oxide semiconductor layer. .

[0136] In addition, in FIG. 7, the insulating layer 264 is a first conductive layer that functions as an electrode of the capacitance element 110. The insulating layer 2 is provided so that the area overlapping the insulating layer 2 is selectively removed. 65 is formed in contact with the first conductive layer 111a and then removed from the first conductive layer 111a. The insulating layer 265 may be, for example, an insulating film containing hydrogen, in other words, a film that releases hydrogen. By using an insulating film capable of performing the above-mentioned process, typically a silicon nitride film, the first conductive layer 11 can be formed. The insulating film capable of releasing hydrogen is capable of supplying hydrogen to the insulating film 1a. Hydrogen concentration is 1×10 22 atoms / cm 3 It is preferable that the insulating film is more than 1000 μm. By forming the second conductive layer 111a in contact with the first conductive layer 111a, hydrogen can be effectively introduced into the first conductive layer 111a. In this way, in addition to the above-described plasma treatment, the oxide semiconductor The resistance of the oxide semiconductor layer can be adjusted as desired by changing the composition of the insulating film in contact with the layer. Note that a layer containing an oxide semiconductor with sufficiently low resistance is called an oxide conductor layer. It can also be replaced.

[0137] The hydrogen contained in the first conductive layer 111a reacts with the oxygen that bonds with the metal atoms to form water. At the same time, oxygen vacancies are formed in the lattice from which oxygen has been desorbed (or in the portion from which oxygen has been desorbed). When hydrogen enters an oxygen vacancy, electrons, which act as carriers, can be generated. When a part of the oxygen bonds with a metal atom, it generates electrons that act as carriers. Therefore, the oxide semiconductor contained in the first conductive layer 111a containing hydrogen is has a higher carrier density than an oxide semiconductor used in a transistor.

[0138] The amount of hydrogen in the oxide semiconductor layer in which the channel region of the transistor is formed is reduced as much as possible. Specifically, it is preferable that the oxide semiconductor layer is By SIMS (Secondary Ion Mass Spectrometry) The resulting hydrogen concentration is 2×10 20 atoms / cm 3 Less than or equal to 5×1019 a toms / cm 3 Less than or equal to 1×10 19 atoms / cm 3 Below, 5 x 10 18 atoms / cm 3 Less than 1 x 10 18 atoms / cm 3 The following is better Preferably 5 x 10 17 atoms / cm 3 Less than 1×10, more preferably 16 atom s / cm 3 The following applies.

[0139] On the other hand, the oxide semiconductor included in the first conductive layer 111a functioning as an electrode of the capacitor 110 The conductor has a lower hydrogen concentration and / or oxygen concentration than the oxide semiconductor used in the transistor. There are many defects and the resistance is low.

[0140] The first conductive layer 111a and the oxide semiconductor layer used in the transistor are typically I n-Ga oxide, In-Zn oxide, In-M-Zn oxide (M is Mg, Al, Ti, It is formed of a metal oxide such as Ga, Y, Zr, La, Ce, Nd, or Hf. The first conductive layer 111a and the oxide semiconductor layer used for the transistor have a light-transmitting property.

[0141] Note that the first conductive layer 111a and the oxide semiconductor layer used in the transistor are In-M- In the case of Zn oxide, when the sum of In and M is 100 atomic %, In is 25 atomic %. omic% or more, M is less than 75 atomic%, or In is 34 atomic% or more, M is less than 66 atomic%.

[0142] The first conductive layer 111a and the oxide semiconductor layer used in the transistor are The gap is preferably 2 eV or more, 2.5 eV or more, or 3 eV or more.

[0143] The thickness of the first conductive layer 111a and the oxide semiconductor layer applied to the transistor is 3 nm or more. 200nm or less, or 3nm to 100nm or 3nm to 60nm It is possible.

[0144] The first conductive layer 111a and the oxide semiconductor layer applied to the transistor are made of In-M-Zn oxide. In the case of In-M-Zn oxide, the sputtering target used to deposit the In-M-Zn oxide film is The atomic ratio of the metal elements preferably satisfies In≧M and Zn≧M. The atomic ratio of the metal elements in the deposition target was In:M:Zn=1:1:1, In: M:Zn=1:1:1.2, In:M:Zn=2:1:1.5, In:M:Zn=2:1 In:M:Zn=2:1:3, In:M:Zn=3:1:2, etc. are preferred. The first conductive layer 111a and the oxide semiconductor layer to be applied to the transistor are The atomic ratios are calculated based on the atomic ratio of the metal elements contained in the sputtering target. This includes a fluctuation of plus or minus 40% in numerical ratios.

[0145] In addition, when hydrogen is added to an oxide semiconductor in which oxygen vacancies are formed, hydrogen is added to the oxygen vacancy sites. As a result, the oxide semiconductor has high electrical conductivity. The oxide semiconductor that has become a conductor can be called an oxide conductor. In general, oxide semiconductors have a large energy gap and are therefore transparent to visible light. On the other hand, an oxide conductor is an oxide semiconductor that has a donor level near the conduction band. Therefore, the effect of absorption due to the donor level is small, and the absorption rate for visible light is about the same as that of an oxide semiconductor. The oxide conductor is a degenerate semiconductor, and the conduction band edge and the Fermi level are It can be said that the oxide conductor film is equal to or substantially equal to the capacitance element. It can be used for electrodes, etc.

[0146] By using the structure shown in FIG. 7, the first conductive layer 111a can be formed simultaneously in the manufacturing process of the transistor. Since the first step in FIG. Since a photomask is not required when forming the conductive layer 111 of the first embodiment, the manufacturing cost can be reduced. It is also possible.

[0147] [Cross-sectional configuration example 3] FIG. 8 shows a cross-sectional configuration example that is partially different from the configurations shown in FIGS. 6 and 7. The configuration shown in FIG. 8 is as follows: In comparison with the configuration shown in FIG. 6, there is no transistor provided on the first substrate 21 side. The main difference is that the cross-sectional structure shown in FIG. This can be applied to the chip panel.

[0148] In this case, the first conductive layer 111 can be formed in a strip shape extending in one direction. The second conductive layer 113 has a strip shape extending in a direction intersecting with the first conductive layer 111. A plurality of such first conductive layers 111 and second conductive layers 113 can be formed. By arranging them side by side, a passive matrix touch panel can be realized.

[0149] In FIG. 8, a contact portion 271 between the first conductive layer 111 and the wiring 273 and a second conductive layer The contact portion 272 between the first conductive layer 111 and the wiring 274 is shown. The second conductor 273 is electrically connected to the insulating layer 264 through an opening. The conductive layer 113 and the wiring 274 are connected via openings provided in the insulating layer 264 and the insulating layer 112. and electrically connect.

[0150] The above is a description of the cross-sectional configuration example.

[0151] In this embodiment, a first substrate supporting a touch sensor and a second substrate supporting a display element are provided. Although the configuration having two substrates including the second substrate has been shown, the present invention is not limited to this. For example, The touch sensor is sandwiched between two substrates, and a first substrate that supports the touch sensor is attached to the two substrates. Alternatively, the display element and the touch sensor may each be sandwiched between two substrates. Alternatively, these may be laminated together to form a four-substrate configuration.

[0152] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0153] (Embodiment 2) In this embodiment, a configuration example of a touch sensor according to one embodiment of the present invention and an example of a driving method thereof will be described. The following description will be given with reference to the drawings.

[0154] [Configuration example] FIG. 9A illustrates a configuration of a touch panel (also referred to as an input / output device) of one embodiment of the present invention. FIG. 9(B) is a circuit diagram illustrating the configuration of the converter CONV. FIG. 9(C) is a circuit diagram for explaining the configuration of the sensor element 22. 9(D-2) is a timing chart for explaining a method of driving the sensor element 22. In FIG.

[0155] The touch sensor exemplified in this embodiment has a plurality of sensor elements arranged in a matrix. 22, a signal line DL to which a plurality of sensor elements 22 arranged in the row direction are electrically connected, A flexible first substrate 21 on which the sensor element 22, the scanning line G1 and the signal line DL are arranged. (See FIG. 9(A)).

[0156] For example, the plurality of sensor elements 22 are arranged in a matrix of n rows and m columns (n ​​and m are each a natural number equal to or greater than 1). They can be arranged in a trix shape.

[0157] The sensor element 22 includes a capacitance element C that functions as a detection element. This corresponds to the capacitance element 110 in the first embodiment. For example, the first electrode of the capacitance element C is The first electrode corresponds to the first conductive layer 111 in the first embodiment, and the second electrode corresponds to the second conductive layer 113. do.

[0158] The second electrode of the capacitance element C is electrically connected to the wiring CS. The potential of the second electrode of C can be controlled by a control signal provided by line CS.

[0159] The sensor element 22 according to one embodiment of the present invention includes at least a transistor M1. Alternatively, the transistor M2 and / or the transistor M3 may be provided (see FIG. 9C). ).

[0160] The transistor M1 has a gate electrically connected to a first electrode of the capacitance element C and a first The electrode is electrically connected to the wiring VPI. The wiring VPI supplies, for example, a ground potential. It has functions.

[0161] The transistor M2 has a gate electrically connected to the scanning line G1 and a first electrode The second electrode is electrically connected to the second electrode of the first transistor M1, and the second electrode is electrically connected to the signal line DL. The scanning line G1 has a function of supplying a selection signal, for example. For example, it has a function of supplying a detection signal DATA.

[0162] The transistor M3 has a gate electrically connected to the wiring RES and a first electrode which functions as a capacitance element. C, and the second electrode is electrically connected to the wiring VRES. The line RES has a function of supplying a reset signal, for example. For example, it has a function of supplying a potential that can make the transistor M1 conductive.

[0163] The capacitance value of the capacitance element C is, for example, determined by the proximity of the first electrode or the second electrode. Alternatively, the distance between the first electrode and the second electrode is changed. The sensor element 22 can supply a detection signal DATA based on a change in capacitance of the capacitance element C. can.

[0164] The wiring CS electrically connected to the second electrode of the capacitance element C is It has a function of supplying a control signal that controls the potential of the electrode.

[0165] The first electrode of the capacitance element C, the gate of the transistor M1, and the third A node formed by electrically connecting one electrode is called node A.

[0166] In FIG. 10A, two sensor elements 22 are arranged in the row direction and two in the column direction. An example of a circuit diagram for this case is shown below.

[0167] FIG. 10B shows a first conductive layer 111 (connected to a first electrode) of the sensor element 22. The first conductive layer 111 is a transistor. The gate of M1 and the second electrode of the transistor M3 are electrically connected to each other. The first conductive layer 111 is disposed so as to overlap with a plurality of pixels 33 shown in FIG. As shown in FIG. 10B, the transistors M1 to M3 are formed on the first conductive layer 11. It is preferable to place it in an area that does not overlap with 1.

[0168] As shown in FIGS. 11A to 11C, the sensor element 22 includes a transistor M2. In this case, in the sensor elements 22 arranged in the row direction, A configuration in which the second electrode of each capacitance element C is electrically connected to the scanning line G1 instead of the wiring CS. This can be done as follows.

[0169] The wiring VPO and the wiring BR shown in FIG. 9B are connected to each other by turning on a transistor, for example. The signal line DL has a function of supplying a high power supply potential so that the detection signal DAT The terminal OUT outputs a signal converted based on the detection signal DATA. It has the function of supplying

[0170] The converter CONV has a conversion circuit. It converts the detection signal DATA and supplies it to the terminal OUT. Various circuits capable of converting a voltage to a voltage of 100 V can be used for the converter CONV. For example, the converter C By electrically connecting the ONV to the sensor element 22, a source follower circuit or A circuit that functions as a center mirror circuit may also be applied.

[0171] Specifically, a converter CONV using a transistor M4 is used to form a source follower circuit. (See FIG. 9B). Note that the transistors M1 to M3 are fabricated in the same process. A transistor capable of performing this function may be used for transistor M4.

[0172] For example, the configuration of the transistor 251 or the transistor 252 illustrated in the first embodiment can be applied to each of the transistors M1 through M4.

[0173] The configuration of the converter CONV is not limited to that shown in FIG. 1 shows different configurations of CONV.

[0174] The converter CONV shown in FIG. 12(A) includes a transistor M5 in addition to a transistor M4. Specifically, the transistor M5 has a gate electrically connected to the signal line DL and a first The electrode is electrically connected to the terminal OUT, and the second electrode is electrically connected to the wiring GND. GND has a function of supplying, for example, a ground potential. Also, as shown in FIG. 12(B), Even if the transistor M4 and the transistor M5 each have a second gate, In this case, it is preferable that the second gate is electrically connected to the gate. .

[0175] The converter CONV shown in FIG. 12C includes transistors M4, M5, and The transistor M4 has a resistor R. Specifically, the gate of the transistor M4 is electrically connected to the wiring BR1. A gate of the transistor M5 is electrically connected to the wiring BR2, and a first electrode of the transistor M5 is connected to the terminal OU. The second electrode is electrically connected to T and the second electrode of resistor R, and the second electrode is electrically connected to wiring GND. The resistor R has a first electrode electrically connected to the wiring VDD. BR2 is a high power supply potential that can turn on each transistor, for example. The wiring VDD has a function of supplying, for example, a high power supply potential.

[0176] 13A and 13B are diagrams showing the first electrode, the signal line DL, and the converter CONV, respectively. 1 is a schematic diagram showing an example of a positional relationship on a substrate 21 of the first embodiment.

[0177] As shown in FIG. 13(A), the converters CONV are arranged in the extension direction of each signal line DL. When the converters CONV are arranged in such a manner that the lengths of the signal lines DL electrically connected to the converters CONV are approximately equal, For example, if the electrical resistance of the signal line DL significantly affects the detection sensitivity, It is preferable to adopt such an arrangement method.

[0178] In FIG. 13B, the length and shape of each signal line DL are made different, The converters CONV and C are arranged close to each other. If the electrical characteristics of the transistors in the ONV are highly position-dependent, place them close to each other. By arranging the converters in such a way, the variation in the electrical characteristics of the converters CONV is reduced, improving the detection sensitivity. It is possible.

[0179] [Driving method example] Next, a method of driving the sensor element 22 will be described with reference to FIG.

[0180] [First step] In the first step, a relay is placed in a state where transistor M3 is turned on and then turned off. A set signal is supplied to the gate of the transistor M3, and the potential of the first electrode of the capacitance element C ( That is, the potential of the node A is set to a predetermined potential (see FIG. 9(D-1) and period T1).

[0181] Specifically, a reset signal is supplied to the wiring RES. The transistor M3 can change the potential of the node A to, for example, make the transistor M1 conductive. Make it an electric potential.

[0182] [Second step] In a second step, a selection signal that causes transistor M2 to be conductive is applied to transistor M2 and electrically connects the second electrode of transistor M1 to signal line DL. (See Figure 9(D-1), period T2).

[0183] Specifically, a selection signal is supplied to the scanning line G1. 2 electrically connects the second electrode of the transistor M1 to the signal line DL.

[0184] [Third step] In a third step, a control signal is supplied to the second electrode of the capacitive element C, and the control signal and A potential that changes based on the capacitance of the capacitive element C is supplied to the gate of the transistor M1.

[0185] Specifically, a rectangular control signal is supplied to the wiring CS. When a voltage is applied to the electrode of node 2, the potential of node A changes based on the capacitance of the capacitance element C (FIG. 9( D-1), see the second half of period T2).

[0186] For example, if a capacitance element C is placed in the air, something with a higher dielectric constant than the air will When the second electrode of element C is placed close to the first electrode, the capacitance of the capacitive element C appears to be large. .

[0187] As a result, the change in the potential of node A caused by the rectangular control signal is The distance between the object and the sensor is smaller than when the object is not placed close to the object (see Fig. 9(D-2), solid line). ).

[0188] Alternatively, the distance between the first electrode and the second electrode of the capacitance element C changes with the deformation of the touch panel. When the capacitance of the capacitance element C is changed, the potential of the node A changes. .

[0189] [Fourth step] In the fourth step, the signal resulting from the change in the potential of the gate of the transistor M1 is It will be supplied to Line DL.

[0190] For example, the change in the current caused by the change in the gate potential of transistor M1 is transmitted to signal line DL. Supply.

[0191] The converter CONV converts the change in current flowing through the signal line DL into a change in voltage and supplies do.

[0192] [5th ​​step] In the fifth step, a selection signal that makes the transistor M2 non-conductive is applied to the transistor M1. The output of this power supply is supplied to the gate of power supply M2.

[0193] This completes the operation of the multiple sensor elements 22 electrically connected to one scanning line G1. do.

[0194] In the case where there are n scanning lines G1, the following is true for the scanning lines G1(1) to G1(n): , steps 1 to 5 can be repeated for each.

[0195] Alternatively, when the wiring RES and the wiring CS are common to each sensor element 22, A driving method as shown in (A) may be used. That is, first, a reset signal is applied to the wiring RES. Next, while a control signal is being supplied to the wiring CS, the scanning lines G1(1) to G2(1) are By supplying a sequential selection signal to the line G1(n), the potential of the node A changes. Signals are supplied to signal lines DL(1) through DL(m).

[0196] By using this method, the frequency of supplying the reset signal and the control signal can be reduced. This can be done.

[0197] Here, the potential of node A may change over time due to various factors. For example, For example, the potential of node A may change due to changes in the environment such as temperature and humidity.

[0198] Therefore, two types of potentials are used as a rectangular control signal to be supplied to the second electrode of the capacitance element C. By taking the difference between the two detection signals DATA, the potential of node A can be calculated over time. This operation can offset the effect of sudden changes in the detection sensitivity. It becomes possible to do so.

[0199] FIG. 14B shows an example of a driving method in which periods R1 and R2 are alternately repeated. .

[0200] In FIG. 14B, during period R1, the transistor M3 is turned on to the signal line RES. During the period in which the potential is being supplied, a low-level potential is supplied to the wiring CS. In other words, in the period R1, the second potential of the capacitor C is supplied to the wiring CS. When the potential of node A changes from a low level to a high level, A detection signal DATA based on the detection is supplied to a signal line DL. The signal converted by the converter CONV based on the converted signal is supplied to the terminal OUT.

[0201] On the other hand, during period R2, a potential that makes transistor M3 conductive is supplied to signal line RES. During this period, a high-level potential is supplied to the wiring CS. In other words, in the period R2, the potential of the second electrode of the capacitance element C is When the potential of node A changes from high to low, The detection signal DATA is supplied to the signal line DL. The signal converted by CONV is supplied to the terminal OUT.

[0202] After that, the signal supplied to the terminal OUT during the period R1 and the signal supplied to the terminal OUT during the period R2 are By taking the difference between the two signals, the effect of the change in the potential of node A over time is cancelled out. can be obtained.

[0203] FIG. 14C shows an example in which a signal supplied to the wiring CS is different from that in FIG. 14B. There are.

[0204] In FIG. 14C, the control signal supplied to the wiring CS is a high-level potential, a middle-level potential, Specifically, in the period R1, the signal line During the period when a potential that makes the transistor M3 conductive is supplied to the RES, A low level potential is supplied to the line CS. Then, scanning is performed while a middle level potential is supplied to the line CS. A selection signal is sequentially supplied to the scanning line G1(1) to the scanning line G1(n). During the period when a potential that makes the transistor M3 conductive is supplied to the signal line RES, A high-level potential is supplied to the wiring CS. Then, a middle-level potential is supplied to the wiring CS. In this state, selection signals are sequentially supplied to the scanning lines G1(1) through G1(n).

[0205] After that, in the same manner as above, the signal supplied to the terminal OUT during the period R1 and the signal supplied to the terminal O during the period R2 are By taking the difference between the signals fed to UT, the effect of changes in the potential of node A over time can be detected. A cancelled signal can be obtained.

[0206] The above is the explanation of the driving method.

[0207] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination.

[0208] (Embodiment 3) In this embodiment, electronic devices and lighting devices that can be manufactured by applying one embodiment of the present invention will be described. This will be described with reference to FIG. 15 and FIG.

[0209] The touch panel according to one embodiment of the present invention is flexible. In addition, by applying one embodiment of the present invention, This makes it possible to create electronic devices and lighting devices that are highly reliable and resistant to repeated bending.

[0210] Examples of electronic devices include television sets (also known as televisions or television receivers). (hereinafter referred to as "computer monitors"), digital cameras, digital video cameras, digital photo frames, mobile phones (also called mobile phones or mobile phone devices), portable game machines, Examples of the device include portable information terminals, audio playback devices, and large game machines such as pachinko machines.

[0211] In addition, since the touch panel of one embodiment of the present invention is flexible, it can be attached to the inner wall or the inner wall of a house or a building. It may also be incorporated along an exterior wall or curved surface of the interior or exterior of the vehicle.

[0212] The electronic device of one embodiment of the present invention may include a touch panel and a secondary battery. At this time, it is preferable that the secondary battery can be charged using non-contact power transmission.

[0213] As the secondary battery, for example, a lithium polymer battery (lithium ion battery) using a gel electrolyte is used. Lithium-ion secondary batteries such as lithium-ion polymer batteries, lithium-ion batteries, nickel-metal hydride batteries battery, nickel-cadmium battery, organic radical battery, lead acid battery, secondary air battery, nickel-zinc battery, silver-zinc battery Examples include lead batteries.

[0214] The electronic device according to one embodiment of the present invention may include a touch panel and an antenna. By receiving a signal through the sensor, the display unit can display images and information. If the child device has a secondary battery, the antenna may be used for contactless power transmission.

[0215] FIG. 15A shows an example of a mobile phone. A mobile phone 7400 includes a housing 740. In addition to the display unit 7402 incorporated in the 1, the operation buttons 7403 and the external connection port 7404 , a speaker 7405, a microphone 7406, etc. The touch panel of one embodiment of the present invention is used for the display portion 7402. According to one aspect of the present invention, a highly reliable mobile phone having a curved display portion can be provided with a high yield. Can be provided.

[0216] In the mobile phone 7400 shown in FIG. 15A, when a display portion 7402 is touched by a finger or the like, You can also make calls, enter text, and perform any other functions. The operation can be performed by touching the display portion 7402 with a finger or the like.

[0217] In addition, the operation button 7403 can be used to turn the power on and off, and to display the display unit 7402. For example, from the email composition screen, you can change the type of image displayed on the You can then switch to the main menu screen.

[0218] FIG. 15B shows an example of a wristwatch-type portable information terminal. The housing 7101, the display unit 7102, the band 7103, the buckle 7104, the operation button 7 105, input / output terminal 7106, etc.

[0219] The portable information terminal 7100 is capable of carrying out mobile telephone calls, e-mails, viewing and creating documents, playing music, and internet connections. It can run various applications such as internet communication and computer games. Cut.

[0220] The display unit 7102 has a curved display surface, and displays information along the curved display surface. The display unit 7102 is equipped with a touch sensor, and the screen can be operated with a finger or a stylus. For example, the icon 7 displayed on the display unit 7102 can be operated by touching the You can launch the application by touching 107.

[0221] The operation button 7105 is used to set the time, turn the power on and off, and turn wireless communication on and off. It supports various functions such as auto-start, silent mode and power saving mode. For example, an operating system built into the portable information terminal 7100 can be Depending on the system, the functions of the operation buttons 7105 can be freely set.

[0222] In addition, the mobile information terminal 7100 is capable of performing short-distance wireless communication according to a communication standard. For example, by communicating with a wireless headset, a hands-free You can also make calls.

[0223] The portable information terminal 7100 also includes an input / output terminal 7106, and is connected to other information terminals via a connector. Data can be exchanged directly through the input / output terminal 7106. The charging operation can be performed by wireless power supply without going through the input / output terminal 7106. You may go.

[0224] A touch panel according to one embodiment of the present invention is incorporated in a display portion 7102 of a portable information terminal 7100. According to one aspect of the present invention, a highly reliable portable information device having a curved display unit is provided. Terminals can be provided with a high yield.

[0225] 15(C) to (E) show an example of a lighting device. A lighting device 7200, a lighting device The lighting device 7210 and the lighting device 7220 are each provided with a base 72 01 and a light emitting part supported by a base part 7201.

[0226] The lighting device 7200 shown in FIG. 15(C) includes a light-emitting unit 7202 having a wavy light-emitting surface. This makes it a highly designed lighting device.

[0227] The light-emitting portion 7212 of the lighting device 7210 shown in FIG. 15(D) has two convexly curved Therefore, the light emitting units are arranged symmetrically around the lighting device 7210. It can illuminate in all directions.

[0228] The lighting device 7220 shown in FIG. 15(E) has a light-emitting portion 7222 that is curved in a concave shape. Therefore, the light emitted from the light emitting unit 7222 is focused on the front surface of the lighting device 7220. It is suitable for brightly illuminating a large area.

[0229] In addition, the light-emitting devices 7200, 7210, and 7220 each include Since the light-emitting part is flexible, it is possible to attach the light-emitting part to a plastic member or a movable frame. The light emitting surface of the light emitting portion may be freely curved depending on the application.

[0230] In this embodiment, the illumination device in which the light-emitting unit is supported by the base is illustrated. The housing may be fixed to the ceiling or hung from the ceiling. The light surface can be curved, so a specific area can be brightened by curving the light-emitting surface in a concave shape. The light can be curved convexly to illuminate an entire room.

[0231] Here, each light-emitting section incorporates a touch panel according to an embodiment of the present invention. According to one embodiment, a lighting device having a curved light-emitting portion and high reliability can be provided with a high yield. Cut.

[0232] FIG. 15(F) shows an example of a portable touch panel. Touch panel 7300 7301, a display unit 7302, an operation button 7303, a drawer member 7304, a control It has part 7305.

[0233] The touch panel 7300 is a flexible panel that is rolled up in a cylindrical housing 7301. It has a display unit 7302.

[0234] In addition, the touch panel 7300 can receive a video signal from the control unit 7305. The image can be displayed on the display unit 7302. The control unit 7305 is also In addition, a terminal section for connecting a connector to the control section 7305 is provided, and video signals and power may be directly supplied from the outside via a wire.

[0235] In addition, the operation button 7303 can be used to turn the power on and off and to switch the displayed image. It is possible to carry out such tasks.

[0236] FIG. 15G shows the tablet in a state where the display unit 7302 is pulled out by the pull-out member 7304. In this state, an image can be displayed on the display unit 7302. In addition, the operation button 7303 arranged on the surface of the housing 7301 allows easy operation with one hand. In addition, as shown in FIG. 15F, the operation button 7303 can be mounted inside the housing 7301. By placing it to one side rather than in the center, it can be easily operated with one hand.

[0237] When the display unit 7302 is pulled out, the display surface of the display unit 7302 is made flat. For fixing, a frame for reinforcing the side of the display portion 7302 may be provided.

[0238] In addition to this configuration, a speaker is provided on the housing, and the audio signal received together with the video signal is output. The configuration may be such that sound is outputted.

[0239] The touch panel of one embodiment of the present invention is incorporated in the display portion 7302. According to this embodiment, a lightweight and highly reliable touch panel can be provided with a high yield.

[0240] 16(A) to (C) show a foldable mobile information terminal 310. FIG. 16(B) shows the portable information terminal 310 in an unfolded or folded state. 16(C) shows the mobile information terminal 310 in a state in which the state is changing from one of the two states. ) shows the portable information terminal 310 in a folded state. When folded, it is highly portable, and when unfolded, it has a seamless, large display area that allows you to see the entire display. Excellent visibility.

[0241] The display panel 316 is supported by three housings 315 connected by hinges 313. The two housings 315 are bent via the hinge 313, so that the portable information terminal 3 10 can be reversibly transformed from the unfolded state to the folded state. A touch panel according to one embodiment can be used for the display panel 316. For example, A touch panel that can be bent from 150 mm to 320 mm can be applied.

[0242] In one aspect of the present invention, when the touch panel is in a folded or unfolded state, The touch panel may be configured to include a sensor that detects the touch state and supplies detection information. The panel control device receives information indicating that the touch panel is in a folded state. The movement of the folded part (or the part that is folded and cannot be seen by the user) Specifically, the display may be stopped. Also, the detection by the touch sensor may be stopped. The notification may be stopped.

[0243] Similarly, the touch panel control device indicates that the touch panel is in the deployed state. The information may be acquired and the display or detection by the touch sensor may be resumed.

[0244] 16(D) and (E) show a foldable mobile information terminal 320. The mobile information terminal 320 is shown in a folded state with the display unit 322 facing outward. FIG. 1E shows the portable information terminal 320 folded so that the display unit 322 faces inward. When the mobile information terminal 320 is not in use, the non-display section 325 is folded outward. The display unit 322 can be prevented from being soiled or scratched. It can be used for 2.

[0245] FIG. 16(F) is a perspective view illustrating the external shape of the mobile information terminal 330. FIG. FIG. 16(H) is a top view of the portable information terminal 330. FIG. 16(H) is a top view of the portable information terminal 340. FIG.

[0246] The portable information terminals 330 and 340 are selected from, for example, a telephone, a notebook, or an information viewing device. It has one or more functions. Specifically, it can be used as a smartphone. can.

[0247] The mobile information terminals 330 and 340 can display text and image information on multiple surfaces. For example, three operation buttons 339 can be displayed on one surface (FIG. 16(F) ( Also, the information 337 shown in the dashed rectangle can be displayed on another surface (see FIG. 16( G)(H)). An example of information 337 is SNS (social networking Notifications of services, notifications of incoming e-mails and phone calls, titles of e-mails, etc. Name, sender name (e.g. email), date, time, battery level, antenna reception strength, etc. Or, instead of the information 337, an operation button is displayed at the position where the information 337 is displayed. In addition, in FIG. 16(F)(G), information is displayed on the upper side. 337 is displayed, one embodiment of the present invention is not limited to this. It may be displayed on the side, as in the mobile information terminal 340 shown in FIG. 16(H).

[0248] For example, the user of the mobile information terminal 330 may store the mobile information terminal 330 in a breast pocket of a suit. When the item is stored, the display (information 337 in this example) can be confirmed.

[0249] Specifically, the telephone number or name of the caller of the incoming call is displayed on the mobile information terminal 330. The user takes the mobile information terminal 330 out of his pocket and You can check the display and decide whether or not to answer the call without having to turn your phone back on.

[0250] The housing 335 of the portable information terminal 330 and the housing 336 of the portable information terminal 340 each have The touch panel according to one embodiment of the present invention can be used for the display portion 333. This allows us to provide highly reliable touch panels with curved displays with a high yield rate. Cut.

[0251] In addition, even if information is displayed on three or more screens, as in the case of a portable information terminal 345 shown in FIG. Here, information 355, information 356, and information 357 are displayed on different sides. Here is an example.

[0252] The display unit 358 of the housing 354 of the portable information terminal 345 has a touch panel according to one embodiment of the present invention. According to one aspect of the present invention, a display device having a curved display portion and a reliable display panel can be used. This allows us to provide highly functional touch panels with a high yield. [Explanation of symbols]

[0253] 10 Touch Panel Module 20 Touch Sensor Module 21 Substrate 22 Sensor element 23 Circuit 24 circuits 25 Wiring 26 Wiring 30 Display Panel 31 Substrate 32 Display section 33 pixels 34 Circuit 41 FPC 42 FPC 43 Terminal 110 Capacitive element 111 Conductive layer 111a Conductive layer 112 Insulating layer 113 Conductive Layer 114 Colored layer 114b Colored layer 114g colored layer 114r colored layer 115 Light blocking layer 117 Conductive Layer 118 Aperture 119 Optical adjustment layer 120 Transistor 121 Semiconductor layer 201 Transistor 202 Transistor 203 Transistor 204 Light emitting element 205 Contact part 210 Connection Layer 211 Adhesive layer 212 Insulating layer 213 Insulating Layer 214 Insulating layer 215 Insulating Layer 216 Insulating Layer 217 Insulating Layer 218 Insulating Layer 219 Spacer 220 Adhesive layer 221 Electrode 222 EL layer 223 Electrode 224 Optical adjustment layer 225 Conductive Layer 251 Transistor 252 Transistor 253 Contact part 260 Connection Layer 261 Adhesive layer 262 Insulating Layer 263 Insulating Layer 264 Insulating Layer 265 Insulating Layer 266 Insulating Layer 267 Overcoat 271 Contact part 272 Contact section 273 Wiring 274 Wiring 310 Mobile Information Terminals 313 Hinge 315 Case 316 Display Panel 320 Mobile Information Terminal 322 Display section 325 Hidden part 330 Mobile Information Terminal 333 Display section 335 Case 336 Case 337 Information 339 Operation Button 340 Mobile Information Terminal 345 Mobile Information Terminal 354 Case 355 Information 356 Information 357 Information 358 Display section 7100 Portable Information Terminal 7101 Case 7102 Display section 7103 Band 7104 Buckle 7105 Operation button 7106 Input / output terminal 7107 Icon 7200 Lighting Equipment 7201 Daibu 7202 Light emitting part 7203 Operation switch 7210 Lighting equipment 7212 Light emitting part 7220 Lighting Equipment 7222 Light emitting part 7300 Touch Panel 7301 Case 7302 Display section 7303 Operation button 7304 Materials 7305 Control Unit 7400 Mobile Phone 7401 Case 7402 Display section 7403 Operation button 7404 External connection port 7405 Speaker 7406 Mike

Claims

[Claim 1] A display device including a first substrate, a first conductive layer, a second conductive layer, an insulating layer, a transistor, and a display element; the first conductive layer has a region located between the first substrate and the second conductive layer; the insulating layer has a region located between the first conductive layer and the second conductive layer; a first transistor electrically connected to the first conductive layer; the first conductive layer, the second conductive layer, and the insulating layer form a capacitance; the second conductive layer has an opening; The opening in the second conductive layer and the first conductive layer have an overlapping region.

Images