Substrate processing device

Abstract

To provide a substrate processing device capable of efficiently processing a substrate.SOLUTION: Fixing pins 33 support a substrate W at a position higher than a top surface 32a of a plate 32. Air outlets 34 blow out air upward from the top surface 32a of the plate 32. A blowout adjustment part 40 adjusts the flow rate of the air blown out by the air outlets 34. Thus, attraction force corresponding to the Bernoulli's principle acts on the substrate W supported by the fixing pins 33. Tactile sensors 33c detect force N received from the substrate W when the attraction force corresponding to the Bernoulli's principle acts on the substrate W supported by the fixing pins 33. A control part 18 changes the flow rate of the air blown out by the air outlets 34 on the basis of information of the force N received from the substrate W detected by the tactile sensors 33c.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus that processes a substrate. The substrate is, for example, a semiconductor wafer, a substrate for a liquid crystal display, a substrate for an organic EL (Electroluminescence), a substrate for an FPD (Flat Panel Display), a substrate for an optical display, a substrate for a magnetic disk, a substrate for an optical disk, a substrate for a magneto-optical disk, a substrate for a photomask, or a substrate for a solar cell.

Background Art

[0002] Conventionally, as this type of apparatus, there is one including a substrate transfer mechanism that transfers a substrate and a processing unit that processes the substrate. The processing unit includes a plate, a rotation driving unit that rotates the plate, a support unit that supports the substrate, and a gas outlet that blows out gas from the upper surface of the plate. An attractive force according to Bernoulli's principle acts on the substrate supported by the support unit. The processing unit processes the substrate while rotating the substrate while holding the substrate by this attractive force (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the case of the conventional example having such a configuration, there are the following problems. That is, in the conventional apparatus, when the processing unit processes the substrate, the attractive force acting on the substrate may be insufficient. In that case, there is a problem that the substrate cannot be processed efficiently.

[0005] As a result of intensive research, the present inventors have found the following regarding the attractive force acting on the substrate.

[0006] That is, the suction force acting on the substrate depends not only on the flow rate of the gas blown out on the back surface of the substrate and the size (clearance) of the gap between the back surface of the substrate and the upper surface of the plate, but also on the friction coefficient of the support part.

[0007] As a result of intensive research, the present inventors have found the following reasons for the occurrence of the phenomenon that the suction force acting on the substrate is insufficient.

[0008] The first reason is a decrease in the frictional force generated between the support part and the substrate depending on the type of film (for example, an oxide film) formed on the substrate W. Depending on the type of film (for example, an oxide film) formed on the substrate W, the frictional force between the substrate and the support part may become low. In such a case, even when the suction force acts on the substrate supported by the support part, the substrate becomes likely to move relative to the support part. As the substrate becomes more likely to move, the suction force acting on the substrate supported by the support part becomes smaller.

[0009] The second reason is a decrease in the frictional force generated between the support part and the substrate due to the processing liquid supplied by the back surface treatment. The processing liquid is supplied to the upper surface of the substrate supported by the support part (this is referred to as the back surface of the substrate). The processing liquid may flow around to the lower surface of the substrate supported by the support part. The processing liquid that has flowed around to the lower surface of the substrate may enter between the support part and the substrate. As a result, the frictional force between the support part and the substrate may become low. In such a case, as described above, the suction force acting on the substrate supported by the support part becomes smaller.

[0010] The present invention has been made in view of such circumstances, and an object thereof is to provide a substrate processing apparatus capable of efficiently processing a substrate.

Means for Solving the Problems

[0011] In order to achieve such an object, the present invention has the following configuration. That is, the present invention is a substrate processing apparatus, comprising a processing unit for processing a substrate and a control unit for controlling the processing unit. The processing unit includes a plate having an upper surface, a rotation driving unit for rotating the plate, a support unit that protrudes upward from the upper surface of the plate and contacts at least one of the lower surface and the edge of the substrate to support the substrate at a position higher than the upper surface of the plate, a gas outlet formed on the upper surface of the plate for blowing out gas upward, a blowing adjustment unit for adjusting the flow rate of the gas blown out from the gas outlet, and a detection unit for detecting the force received from the substrate when a suction force according to Bernoulli's principle acts on the substrate supported by the support unit. The control unit controls the processing unit based on the information on the force received from the substrate detected by the detection unit.

[0012] The support unit supports the substrate at a position higher than the upper surface of the plate. The gas outlet blows out gas upward from the upper surface of the plate. The blowing adjustment unit adjusts the flow rate of the gas blown out from the gas outlet. Thereby, a suction force according to Bernoulli's principle acts on the substrate supported by the support unit. The detection unit detects the force received from the substrate when a suction force according to Bernoulli's principle acts on the substrate supported by the support unit. The control unit controls the processing unit based on the information on the force received from the substrate detected by the detection unit. That is, when the frictional force between the substrate and the support unit decreases, the force received from the substrate when a suction force according to Bernoulli's principle acts on the substrate supported by the support unit will not act sufficiently on the substrate. By the detection unit detecting the force received from the substrate, the control unit can detect a decrease in the frictional force between the substrate and the support unit. Since the control unit controls the processing unit based on the detected information on the force received from the substrate, it is possible to reduce events that may occur based on a decrease in the frictional force between the substrate and the support unit. As a result, the substrate can be processed efficiently.

[0013] Also, in the substrate processing apparatus according to the present invention, it is preferable that the detection unit detects, as the force received from the substrate, the pressing force with which the substrate presses against the support unit when the suction force acts on the substrate supported by the support unit, and the control unit controls the processing unit based on the information on the pressing force detected by the detection unit (Claim 2). When the frictional force between the substrate and the support unit decreases, the pressing force with which the substrate presses against the support unit when the suction force according to Bernoulli's principle acts on the substrate supported by the support unit no longer sufficiently acts on the substrate. By the detection unit detecting the pressing force with which the substrate presses against the support unit, the control unit can surely detect a decrease in the frictional force between the substrate and the support unit. Since the control unit controls the processing unit based on the detected information on the pressing force with which the substrate presses against the support unit, events that may occur based on a decrease in the frictional force between the substrate and the support unit can be further reduced.

[0014] Also, in the substrate processing apparatus according to the present invention, it is preferable that the detection unit be attached to the support unit (Claim 3). Thereby, the force received from the substrate can be accurately detected in the support unit as the pressing force with which the substrate presses against the support unit.

[0015] Also, in the substrate processing apparatus according to the present invention, it is preferable that the detection unit detects, as the force received from the substrate, the pressing force with which the support unit presses against the plate when the suction force acts on the substrate supported by the support unit, and the control unit controls the processing unit based on the information on the pressing force detected by the detection unit (Claim 4). Thereby, based on the pressing force with which the support unit presses against the plate, the force received from the substrate can be detected.

[0016] Also, in the substrate processing apparatus according to the present invention, it is preferable that the detection unit be attached to the plate (Claim 5). Thereby, even at a location different from the support unit, the force received from the substrate can be detected as the pressing force with which the support unit presses against the plate.

[0017] Also, in the substrate processing apparatus according to the present invention, it is preferable that the control unit changes the flow rate of the gas blown out from the gas outlet based on the information on the force received from the substrate (Claim 6). Here, depending on the state of the surface of the substrate processed by the processing unit and the flow rate and type of the gas or liquid supplied by the processing unit to the upper surface or the lower surface of the substrate, the force received from the substrate may be insufficient for the force required for the processing. In such a case, the force received from the substrate can be made the force required for the processing.

[0018] Also, in the substrate processing apparatus according to the present invention, it is preferable that the control unit adjusts the flow rate of the gas blown out from the gas outlet so that the force received from the substrate becomes equal to or greater than the specified value when the force received from the substrate is less than the specified value (Claim 7). Thereby, when the force received from the substrate does not exceed the specified value due to a decrease in the frictional force between the support portion and the substrate, the force received from the substrate can be made the force required for the processing.

[0019] Also, in the substrate processing apparatus according to the present invention, it is preferable that the specified value is a predetermined value for the processing unit to start the processing on the substrate (Claim 8). Thereby, when the detected force received from the substrate does not exceed the specified value for the processing unit to start the processing on the substrate, the force received from the substrate can be made the force required for the processing.

[0020] Also, in the substrate processing apparatus according to the present invention, it is preferable that the specified value is a predetermined value required for the processing of the substrate during the processing unit executes the processing on the substrate (Claim 9). Thereby, when the detected force received from the substrate is less than the specified value required for the processing of the substrate during the processing unit executes the processing on the substrate, the force received from the substrate can be made the force required for the processing.

[0021] Also, in the substrate processing apparatus according to the present invention, the processing of the substrate includes at least a first process and a second process following the first process, and the specified value is preferably a predetermined value required for the second process when the processing of the substrate changes from the first process to the second process (Claim 10). Thereby, when the force received from the detected substrate is below the specified value required for the second process when the processing of the substrate changes from the first process to the second process, the force received from the substrate can be made into the force required for the processing.

[0022] Also, in the substrate processing apparatus according to the present invention, the specified value is preferably a predetermined value for each type of the shape of the substrate (Claim 11). Thereby, the determination of whether or not the force received from the detected substrate exceeds the specified value can be made at a height corresponding to the type of the shape of the substrate.

[0023] Also, in the substrate processing apparatus according to the present invention, the specified value is preferably a predetermined value according to the rotation speed of the plate (Claim 12). Thereby, the determination of whether or not the force received from the detected substrate exceeds the specified value can be made at a height corresponding to the rotation speed of the plate.

[0024] Also, in the substrate processing apparatus according to the present invention, when the rotation speed of the plate changes during the processing in the processing unit, it is preferable that the specified value changes according to the change in the rotation speed of the plate (Claim 13). Thereby, the determination of whether or not the force received from the detected substrate exceeds the specified value can be made at a height corresponding to the change in the rotation speed of the plate.

[0025] Also, in the substrate processing apparatus according to the present invention, a processing film is formed on the substrate, the support portion supports the surface on which the processing film is formed, and the specified value is preferably a predetermined value according to the type of the processing film (Claim 14). Thereby, the determination of whether or not the force received from the detected substrate exceeds the specified value can be made at a height corresponding to the type of the processing film.

[0026] Further, in the substrate processing apparatus according to the present invention, a supply unit for supplying a processing liquid to the substrate supported by the support unit is provided, and it is preferable that the specified value is a value determined in advance according to the type of the processing liquid or the flow rate of the processing liquid (Claim 15). Thereby, it is possible to determine whether or not the force received from the detected substrate exceeds the specified value at a height corresponding to the type of the processing liquid or the flow rate of the processing liquid.

[0027] Further, in the substrate processing apparatus according to the present invention, when the type of the processing liquid or the flow rate of the processing liquid changes during the processing in the processing unit, it is preferable that the specified value changes according to the change in the type of the processing liquid or the flow rate of the processing liquid (Claim 16). Thereby, it is possible to determine whether or not the force received from the detected substrate exceeds the specified value at a height corresponding to the change in the type of the processing liquid or the flow rate of the processing liquid.

[0028] Further, in the substrate processing apparatus according to the present invention, it is preferable that the specified value is a value determined in advance according to the type of the processing unit (Claim 17). Thereby, it is possible to determine whether or not the force received from the detected substrate exceeds the specified value at a height corresponding to the type of the processing unit.

[0029] Further, in the substrate processing apparatus according to the present invention, when the force received from the substrate is less than the specified value even though the control unit adjusts the flow rate of the gas blown out from the gas outlet to be equal to or greater than the specified value, it is preferable to stop the rotation of the rotation drive unit (Claim 18). Here, even though the flow rate of the gas blown out from the gas outlet is adjusted to be equal to or greater than the specified value, the reason why the force received from the substrate is less than the specified value may be that the substrate is not supported by the support unit or the substrate supported by the support unit is damaged. By stopping the rotation of the rotation drive unit in such a case, it is possible to reduce the wasted processing time.

Advantages of the Invention

[0030] According to the substrate processing apparatus of the present invention, when an attractive force according to Bernoulli's principle acts on a substrate supported by a support portion, the control unit can detect a decrease in the frictional force between the substrate and the support portion by detecting the force received by the detection unit from the substrate. Since the control unit controls the processing unit based on the information on the force received from the detected substrate, it is possible to reduce events that may occur based on a decrease in the frictional force between the substrate and the support portion. As a result, it is possible to provide a substrate processing apparatus that can efficiently process a substrate.

Brief Description of the Drawings

[0031]

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[0032] [First Embodiment] [Overview of the Substrate Processing Apparatus] FIG. 1 is a plan view of the substrate processing apparatus according to the first embodiment. The substrate processing apparatus 1 performs processing on a substrate (for example, a semiconductor wafer) W.

[0033] The substrate W is, for example, a semiconductor wafer, a liquid crystal display substrate, an organic EL (Electroluminescence) substrate, an FPD (Flat Panel Display) substrate, an optical display substrate, a magnetic disk substrate, an optical disk substrate, a magneto-optical disk substrate, a photomask substrate, or a solar cell substrate.

[0034] The substrate processing apparatus 1 includes an indexer unit 2. The indexer unit 2 includes a plurality (for example, four) of carrier mounting units 3. Each carrier mounting unit 3 mounts one carrier C. The carrier C accommodates a plurality of substrates W. The carrier C is, for example, a FOUP (front opening unified pod).

[0035] Carrier C has a barcode (not shown). The barcode is an identifier for identifying carrier C or for identifying substrate W within carrier C. The barcode is attached to, for example, the outer surface of carrier C.

[0036] Indexer unit 2 includes a barcode reader 4. The barcode reader 4 reads the barcode attached to carrier C placed on carrier placement unit 3. The barcode reader 4 is attached to, for example, carrier placement unit 3.

[0037] Indexer unit 2 includes a transfer mechanism 5. The transfer mechanism 5 can access carrier C placed on each carrier placement unit 3. The transfer mechanism 5 transfers substrate W to carrier C placed on carrier placement unit 3. The transfer mechanism 5 includes a hand 5a and a hand drive unit 5b. The hand 5a supports one substrate W in a horizontal posture. The hand drive unit 5b is connected to the hand 5a. The hand drive unit 5b moves the hand 5a. For example, the hand drive unit 5b moves the hand 5a in a horizontal direction in parallel. For example, the hand drive unit 5b moves the hand 5a in a vertical direction in parallel. For example, the hand drive unit 5b rotates the hand 5a around a rotation axis. The rotation axis of the hand 5a is parallel to, for example, the vertical direction.

[0038] Indexer unit 2 includes a presence / absence detection unit 6. The presence / absence detection unit 6 detects whether the hand 5a is supporting substrate W. That is, the presence / absence detection unit 6 detects whether the transfer mechanism 5 is transferring substrate W. The presence / absence detection unit 6 is attached to, for example, the hand 5a.

[0039] Substrate processing apparatus 1 includes a processing block 11. The processing block 11 is connected to the indexer unit 2.

[0040] The processing block 11 includes a placement unit 12. The placement unit 12 places a plurality of substrates W.

[0041] Processing block 11 includes a shape detection unit 13. The shape detection unit 13 detects the shape of the substrate W placed on the placement unit 12. The shape detection unit 13 is, for example, an image sensor that images the substrate W. The image sensor is, for example, a one-dimensional image sensor or a two-dimensional image sensor. The shape detection unit 13 is attached to the placement unit 12, for example.

[0042] Processing block 11 includes a plurality of processing units 14. Each processing unit 14 processes one substrate W.

[0043] Processing block 11 includes a transfer mechanism 15. The transfer mechanism 15 is accessible to the placement unit 12 and all the processing units 14. The transfer mechanism 15 transfers the substrate W to the placement unit 12 and the processing units 14. The transfer mechanism 15 includes a hand 15a and a hand drive unit 15b. The hand 15a supports one substrate W in a horizontal posture. The hand drive unit 15b is connected to the hand 15a. The hand drive unit 15b moves the hand 15a. For example, the hand drive unit 15b moves the hand 15a in a horizontal direction in parallel. For example, the hand drive unit 15b moves the hand 15a in a vertical direction in parallel. For example, the hand drive unit 15b rotates the hand 15a around a rotation axis. The rotation axis of the hand 15a is parallel to the vertical direction, for example.

[0044] Processing block 11 includes a presence / absence detection unit 16. The presence / absence detection unit 16 detects whether the hand 15a is supporting the substrate W. That is, the presence / absence detection unit 16 detects whether the transfer mechanism 15 is transferring the substrate W. The presence / absence detection unit 16 is attached to the hand 15a, for example.

[0045] The placement unit 12 is disposed between the transfer mechanism 5 and the transfer mechanism 15. The transfer mechanism 5 is also accessible to the placement unit 12. The transfer mechanism 5 transfers the substrate W to the placement unit 12. The placement unit 12 places the substrate W transferred between the transfer mechanism 5 and the transfer mechanism 15.

[0046] The substrate processing apparatus 1 includes an input unit 17. A user can input information to the input unit 17. The input unit 17 is attached to, for example, the outer surface of the indexer unit 2.

[0047] The substrate processing apparatus 1 includes a control unit 18. The control unit 18 acquires the detection results of the barcode reader 4, the presence / absence detection units 6, 16, and the shape detection unit 13. The control unit 18 acquires the information input to the input unit 17. The control unit 18 controls the transfer mechanisms 5, 15 and the processing unit 14. Specifically, the control unit 18 controls the hand drive unit 5b of the transfer mechanism 5 and the hand drive unit 15b of the transfer mechanism 15.

[0048] FIG. 2 is a control block diagram of the substrate processing apparatus 1. The control unit 18 is communicably connected to the barcode reader 4, the transfer mechanisms 5, 15, the presence / absence detection units 6, 16, the shape detection unit 13, the processing unit 14, and the input unit 17.

[0049] The control unit 18 is realized by a central processing unit (CPU) that executes various processes, a RAM (Random-Access Memory) that serves as a work area for arithmetic processing, a storage medium such as a fixed disk, etc. The storage medium stores various information in advance. The storage medium stores, for example, information regarding the operating conditions of the transfer mechanisms 5, 15. The storage medium stores, for example, a processing recipe (processing program) for processing the substrate W. The processing recipe defines the processing conditions of the processing unit 14. The storage medium stores, for example, information for identifying each substrate W.

[0050] An operation example of the substrate processing apparatus 1 will be described. The transfer mechanism 5 transfers the substrate W from the carrier C on the carrier placement unit 3 to the placement unit 12. The transfer mechanism 15 transfers the substrate W from the placement unit 12 to the processing unit 14. The processing unit 14 processes the substrate W. The transfer mechanism 15 transfers the substrate W from the processing unit 14 to the placement unit 12. The transfer mechanism 5 transfers the substrate W from the placement unit 12 to the carrier C on the carrier placement unit 3.

[0051] <Shape of the substrate W> FIG. 3 is a plan view of the substrate W. The basic shape of the substrate W will be described. The substrate W has a thin flat plate shape. The substrate W has a substantially circular shape in plan view. The substrate W has a peripheral portion 22 and a main portion 23. The main portion 23 is the portion of the substrate W located inside the peripheral portion 22. The semiconductor device is formed on the main portion 23. In FIG. 3, for convenience, the boundary between the peripheral portion 22 and the main portion 23 is indicated by a broken line.

[0052] The substrate processing apparatus 1 can process substrates W having different shapes. Hereinafter, two types of substrates W having different shapes will be exemplified. For convenience, the two types of substrates W having different shapes are respectively referred to as a normal substrate WN and a special substrate WS.

[0053] FIG. 4(a) is a cross-sectional view of the normal substrate WN. The normal substrate WN is a substrate W that does not include a recess 24 described later.

[0054] FIG. 4(b) is a cross-sectional view of the special substrate WS. The special substrate WS is a substrate W that includes a recess 24 formed by the main portion 23 being recessed more than the peripheral portion 22. The recess 24 is formed, for example, by a grinding process (grind process).

[0055] The main portion 23 of the special substrate WS is thinner than the main portion 23 of the normal substrate WN. The special substrate WS has lower rigidity than the normal substrate WN. The special substrate WS is more easily bent than the normal substrate WN.

[0056] Specifically, the main portion 23 of the normal substrate WN has a thickness TN1. The main portion 23 of the special substrate WS has a thickness TS1. The thickness TS1 is smaller than the thickness TN1. The thickness TS1 is, for example, 10 [μm] or more and 200 [μm] or less. The thickness TN1 is, for example, 600 [μm] or more and 1000 [μm] or less.

[0057] The peripheral portion 22 of the normal substrate WN has a thickness TN2. The peripheral portion 22 of the special substrate WS has a thickness TS2. The thickness TN2 is, for example, the same as the thickness TS2. The thicknesses TN2 and TS2 are, for example, 600 [μm] or more and 1000 [μm] or less.

[0058] <Configuration of Processing Unit 14> Refer to FIG. 1. The processing unit 14 includes a substrate holding unit 31 and a guard 61. The substrate holding unit 31 holds a single substrate W. The substrate holding unit 31 holds the substrate W in a horizontal posture. The guard 61 is disposed so as to surround the side of the substrate holding unit 31.

[0059] FIG. 5 is a diagram schematically showing the configuration of the processing unit 14. In FIG. 5, the illustration of the guard 61 is omitted. The processing unit 14 further includes a rotation driving unit 45 and a processing liquid supply unit 51. The rotation driving unit 45 rotates the substrate holding unit 31. The processing liquid supply unit 51 supplies a processing liquid to the substrate W held by the substrate holding unit 31. The guard 61 receives the processing liquid scattered from the substrate W.

[0060] The substrate holding unit 31 includes a plate 32. The plate 32 has a substantially disk shape. The plate 32 has an upper surface 32a. The upper surface 32a is substantially horizontal. The upper surface 32a is substantially flat.

[0061] The rotation driving unit 45 is connected to the lower part of the plate 32. The rotation driving unit 45 rotates the plate 32 around the rotation axis A. The rotation axis A is parallel to the vertical direction. The rotation driving unit 45 passes through the center of the plate 32. More specifically, the rotation driving unit 45 includes a rotation shaft 46. The rotation shaft 46 extends in the vertical direction. The rotation shaft 46 is disposed on the rotation axis A. The rotation shaft 46 is connected to the lower part of the plate 32. The rotation driving unit 45 further includes a motor (not shown). The motor is connected to the rotation shaft 46. The motor rotates the rotation shaft 46 around the rotation axis A.

[0062] The rotation driving unit 45 can further change the rotation speed of the substrate holding unit 31 (plate 32).

[0063] FIG. 6 is a plan view of the plate 32. The upper surface 32a of the plate 32 is circular in plan view. The upper surface 32a of the plate 32 is larger than the substrate W in plan view.

[0064] The substrate holding portion 31 includes a plurality (e.g., 30) of fixing pins 33. The fixing pins 33 support the substrate W. Each fixing pin 33 is fixed to the plate 32. Each fixing pin 33 is immovable relative to the plate 32, except for the following exceptions.

[0065] Each fixing pin 33 is divided into a fixing pin 33a and a fixing pin 33b. Each fixing pin 33a is immovable relative to the plate 32. Each fixing pin 33a is non-rotatable relative to the plate 32. In contrast, each fixing pin 33b is slightly movable in the vertical direction relative to the plate 32 by the action of the elastic member 33c4 of the tactile sensor 33c described later. The tactile sensor 33c is disposed inside the plate 32 as described later. Note that a part of the tactile sensor 33c may be exposed from the plate 32. Each fixing pin 33b is also immovable in a direction parallel to the upper surface 32a of the plate 32. Each fixing pin 33b is immovable in an oblique direction relative to the upper surface 32a of the plate 32.

[0066] The fixing pins 33 are arranged on the upper surface 32a of the plate 32. The fixing pins 33 are arranged at the peripheral portion of the upper surface 32a of the plate 32. The fixing pins 33 are arranged on a circumference around the rotation axis A in a plan view. Each fixing pin 33 is separated from each other.

[0067] Six fixing pins 33b are arranged at every predetermined angle (e.g., 60 degrees). Six fixing pins 33b are arranged at a predetermined interval (e.g., every four). Note that all of the fixing pins 33 may be fixing pins 33b. For example, when only six fixing pins 33 are arranged, all six fixing pins 33 may be fixing pins 33b.

[0068] FIG. 7 is a cross-sectional view taken along line B-B of the plate 32. The fixing pin 33b has a space for accommodating the base end portion of the fixing pin 33b and the tactile sensor 33c formed below the fixing pin 33b shown in FIG. 6 in the plate 32. The tactile sensor 33c is fixed to the lower surface of the space, and the base end portion of the fixing pin 33b is fixed to the upper surface of the tactile sensor 33c. The tip end portion of the fixing portion 33b is exposed from the upper surface 32a of the plate 32.

[0069] When the substrate W is placed on the fixing pin 33, the tactile sensor 33c detects the vertical force generated by the placement of the substrate W. When the substrate W is not placed on the fixing pin 33, the tactile sensor 33c does not detect the vertical force. Further, as will be described later, when an attractive force according to Bernoulli's principle acts on the substrate W placed on the fixing pin 33, the tactile sensor 33c detects the force received by the fixing pin 33 from the substrate W in the vertical direction. That is, the tactile sensor 33c detects, as the force received from the substrate W, the pressing force with which the substrate W presses the fixing pin 33 when an attractive force acts on the substrate W supported by the fixing pin 33. The force N received from the substrate W is a vertical force generated by the substrate W pushing the fixing pin 33b by the attractive force.

[0070] The tactile sensor 33c is composed of a base material portion 33c1 fixed to the lower surface of the space, a sensor chip 33c2 fixed to the base material portion 33c1, a cover portion 33c3 covering the sensor chip 33c2, and an elastic member 33c4 interposed between the cover portion and the base material portion 33c1 and the sensor chip 33c2. The fixing pin 33b is fixed to the upper surface of the cover portion 33c3. The sensor chip 33c2 is, for example, a piezoresistive MEMS sensor that utilizes the piezoresistive effect. The sensor chip 33c2 detects the force applied in the vertical direction.

[0071] In a state where the substrate W is not placed on the fixing pin 33, the height of the exposed fixing pin 33b is slightly higher than the height of the fixing pin 33a. In a state where the substrate W is placed on the fixing pin 33, the heights of the exposed fixing pin 33b and the fixing pin 33a are the same or almost the same.

[0072] Refer to FIG. 5. The fixing pin 33 projects upward from the upper surface 32a of the plate 32. The fixing pin 33 contacts the lower surface 26 of the substrate W. More specifically, the fixing pin 33 contacts the lower surface 26 at the peripheral edge 22 of the substrate W. Thereby, the fixing pin 33 supports the substrate W at a position higher than the upper surface 32a of the plate 32. FIG. 6 shows the fixing pin 33a, the cover portion 33c3, and the elastic member 33c4 in a state where the substrate W is not supported by a two-dot chain line. When the fixing pin 33 supports the substrate W, the center of the substrate W is located on the rotation axis A.

[0073] The fixing pin 33 does not contact the upper surface 27 of the substrate W. The fixing pin 33 allows the substrate W to move upward with respect to the fixing pin 33. The fixing pin 33 does not contact the edge 28 of the substrate W. The fixing pin 33 itself allows the substrate W to slide with respect to the fixing pin 33. Thus, the fixing pin 33 itself does not hold the substrate W.

[0074] The substrate holding part 31 is provided with a gas outlet 34. The gas outlet 34 is formed on the upper surface 32a of the plate 32. The gas outlet 34 is arranged at a position overlapping with the substrate W supported by the fixing pins 33 in a plan view. The gas outlet 34 is arranged below the substrate W supported by the fixing pins 33. The gas outlet 34 blows out gas from a position below the substrate W supported by the fixing pins 33. The gas outlet 34 blows out gas upward. The gas outlet 34 blows out gas between the upper surface 32a of the plate 32 and the lower surface 26 of the substrate W supported by the fixing pins 33. The gas blown out by the gas outlet 34 is, for example, nitrogen gas or air. The gas blown out by the gas outlet 34 is, for example, high-pressure gas or compressed gas. The gas is supplied between the upper surface 32a of the plate 32 and the lower surface 26 of the substrate W supported by the fixing pins 33. The gas flows along the lower surface 26 of the substrate W supported by the fixing pins 33. Thereby, the gas outlet 34 sucks the substrate W. Specifically, a negative pressure is formed when the gas flows along the lower surface 26 of the substrate W. That is, the air pressure received by the lower surface 26 of the substrate W is smaller than the air pressure received by the upper surface 27 of the substrate W. According to Bernoulli's principle, a downward force acts on the substrate W. That is, the substrate W is sucked downward. The substrate W is sucked toward the gas outlet 34 and the plate 32. However, the gas outlet 34 does not contact the substrate W. The plate 32 also does not contact the substrate W.

[0075] The gas outlet 34 sucks the substrate W downward, and by the fixing pins 33 contacting the lower surface 26 of the substrate W, the substrate W is supported and maintained at a predetermined position. Normally, due to the suction force acting on the substrate W, the substrate W does not slide horizontally with respect to the fixing pins 33. However, as will be described later, when the frictional force between the substrate W and the fixing pins 33 decreases, the substrate W becomes liable to slide horizontally with respect to the fixing pins 33.

[0076] As the flow rate of the gas blown out from the gas outlet 34 increases, the suction force acting on the substrate W increases. However, as will be described later, when the frictional force between the substrate W and the fixing pin 33 decreases, even if the flow rate of the gas blown out from the gas outlet 34 is increased, the substrate W is likely to slide horizontally with respect to the fixing pin 33.

[0077] Therefore, the present invention effectively detects a decrease in the frictional force between the substrate W and the fixing pin 33, and prevents the substrate W from sliding horizontally with respect to the fixing pin 33. Even if the substrate W starts to slide horizontally with respect to the fixing pin 33, the substrate W is stopped from sliding horizontally with respect to the fixing pin 33 as early as possible.

[0078] The fixing pin 33 is an example of the support portion in the present invention. The tactile sensor 33c is an example of the detection portion in the present invention.

[0079] The processing unit 14 includes a gas supply path 38. The gas supply path 38 supplies gas to the gas outlet 34.

[0080] The gas supply path 38 has a first end and a second end. The first end of the gas supply path 38 is connected to the gas outlet 34. The second end of the gas supply path 38 is connected to the gas supply source 39. A part of the gas supply path 38 is formed inside the plate 32. The gas supply path 38 supplies gas to the gas outlet 34.

[0081] The processing unit 14 includes a blowing adjustment unit 40. The blowing adjustment unit 40 is provided in the gas supply path 38. The blowing adjustment unit 40 adjusts the flow rate of the gas blown out from the gas outlet 34. The blowing adjustment unit 40 includes, for example, a flow rate adjustment valve and an on-off valve.

[0082] The processing liquid supply unit 51 includes a nozzle 52. The nozzle 52 discharges the processing liquid. The nozzle 52 supplies the processing liquid to the upper surface 27 of the substrate W supported by the fixing pin 33. The nozzle 52 is disposed at a position higher than the substrate W supported by the fixing pin 33. The nozzle 52 discharges the processing liquid downward.

[0083] The processing unit 14 includes a nozzle movement mechanism (not shown). The nozzle movement mechanism moves the nozzle 52 between a processing position and a retracted position. FIG. 5 shows the nozzle 52 in the processing position by a dashed line. FIG. 5 shows the nozzle 52 in the retracted position by a solid line. The processing position is above the substrate W supported by the fixing pins 33. When the nozzle 52 is in the processing position, the nozzle 52 overlaps the substrate W supported by the fixing pins 33 in a plan view. When the nozzle 52 is in the retracted position, the nozzle 52 does not overlap the substrate W supported by the fixing pins 33 in a plan view.

[0084] The processing liquid supply unit 51 includes a pipe 53. The pipe 53 supplies the processing liquid to the nozzle 52. The pipe 53 has a first end and a second end. The first end of the pipe 53 is connected to the nozzle 52. The second end of the pipe 53 is connected to the processing liquid supply source 54.

[0085] The processing unit 14 includes a flow rate adjustment unit 57. The flow rate adjustment unit 57 is provided in the pipe 53. The flow rate adjustment unit 57 adjusts the flow rate of the processing liquid supplied from the processing liquid supply unit 51 to the substrate W. That is, the flow rate adjustment unit 57 adjusts the flow rate of the processing liquid discharged from the nozzle 52.

[0086] The processing unit 14 includes a shape detection unit 63. The shape detection unit 63 detects the shape of the substrate W supported by the fixing pins 33. The shape detection unit 63 is, for example, an image sensor that images the substrate W. The image sensor is, for example, a one-dimensional image sensor or a two-dimensional image sensor. The shape detection unit 63 is arranged above the plate 32, for example. The shape detection unit 63 is arranged above the substrate W supported by the fixing pins 33, for example.

[0087] Refer to FIG. 2. The control unit 18 acquires the detection results of the tactile sensor 33c and the shape detection unit 63 in the processing unit 14. The control unit 18 controls the blowing adjustment unit 40, the rotation drive unit 45, and the flow rate adjustment unit 57 based on the processing recipe. In particular, the control unit 18 controls the blowing adjustment unit 40, the rotation drive unit 45, and the flow rate adjustment unit 57 based on the information on the force received from the substrate W detected by the tactile sensor 33c. The control unit 18 controls a nozzle movement mechanism (not shown).

[0088] <Operation example of the processing unit 14 of the first embodiment> In the operation example of the processing unit 14 of the following embodiment, during the operation of the processing unit 14, the control unit 18 changes the flow rate of the gas blown out from the gas outlet 34 based on the information on the force N received from the substrate W detected by the tactile sensor 33c via the fixed pin 33b. The period during the operation of the processing unit 14 is the period during which an attractive force according to Bernoulli's principle acts on the substrate W placed on the fixed pin 33. In particular, in the operation example of the processing unit 14 of the first embodiment, when the force N received from the substrate W detected by the tactile sensor 33c via the fixed pin 33b is less than a predetermined specified value according to the shape of the substrate W (for example, the thickness of the main portion 23) during the operation of the processing unit 14, the control unit 18 adjusts the flow rate of the gas so that it becomes equal to or greater than the specified value. In the first embodiment, the flow rate of the gas is predetermined according to the shape of the substrate W, and the flow rate of the gas is predetermined as a reference value.

[0089] FIG. 8 is a flowchart showing the control of the control unit 18 and the procedure of the operation of the processing unit 14.

[0090] Step S1 The barcode reader 4 reads the barcode attached to the carrier C. The barcode reader 4 outputs the detection result of the barcode reader 4 to the control unit 18. The shape detection unit 13 detects the shape of the substrate W placed on the placement unit 12. The shape detection unit 63 detects the shape of the substrate W supported by the fixed pin 33. The shape detection units 13 and 63 output the detection results of the shape detection units 13 and 63 to the control unit 18.

[0091] Step S2 The control unit 18 acquires the detection results of the barcode reader 4 and the shape detection units 13 and 63. Based on the detection results of the barcode reader 4 and the shape detection units 13 and 63, the control unit 18 determines the shape of the substrate W supported by the fixing pins 33. Specifically, the control unit 18 determines that the substrate W supported by the fixing pins 33 is a normal substrate WN.

[0092] Note that even after the substrate W is unloaded from the carrier C, the control unit 18 manages it in association with the position and shape of the substrate W. Specifically, the control unit 18 manages the shape of the substrate W conveyed by the conveying mechanisms 5 and 15 at each time, the shape of the substrate W placed on the placement unit 12 at each time, and the shape of the substrate W supported by the fixing pins 33 at each time.

[0093] Step S3 The control unit 18 preliminarily determines the flow rate of the gas blown out from the gas outlet 34 according to the shape of the substrate W supported by the fixing pins 33. Hereinafter, the flow rate of the gas blown out from the gas outlet 34 is abbreviated as "blow-out amount QT". For example, the control unit 18 stores in advance the correspondence between the shape of the substrate W and the blow-out amount QT. The control unit 18 determines the blow-out amount QT corresponding to the shape of the substrate W determined in step S2 from this correspondence. The control unit 18 changes the blow-out amount QT according to the shape of the substrate W supported by the fixing pins 33.

[0094] Specifically, the control unit 18 changes the blow-out amount QT according to the shape of the substrate W supported by the fixing pins 33.

[0095] For example, when the substrate W is a normal substrate WN, the control unit 18 determines the blow-out amount QT according to the shape of the special substrate WN (the thickness TN1 of the main part 23). When the substrate W is a special substrate WS, the control unit 18 determines the blow-out amount QT according to the shape of the special substrate WS (the thickness TS1 of the main part 23).

[0096] For example, when the shape of the substrate W supported by the fixing pins 33 is the normal substrate WN, the control unit 18 determines the blowing amount QT as the first blowing amount Q1a. When the shape of the substrate W supported by the fixing pins 33 is the special substrate WS, the control unit 18 determines the blowing amount QT as the second blowing amount Q2a that is smaller than the first blowing amount Q1a.

[0097] Step S4 The control unit 18 preliminarily determines the force N (prescribed value) received from the substrate W according to the shape of the substrate W. Hereinafter, the value of the force N received from the substrate W required for the substrate W to rotate at a predetermined speed (hereinafter referred to as the prescribed rotation speed) is referred to as the "rotation prescribed value". In addition, the value of the force N received from the substrate W required to perform the process of supplying the processing liquid to the substrate W rotated at the prescribed rotation speed is referred to as the "processing prescribed value". When collectively referring to the rotation prescribed value and the processing prescribed value, it is simply referred to as the "prescribed value". For example, the control unit 18 stores in advance the correspondence between the shape of the substrate W and the prescribed value. The control unit 18 determines the prescribed value corresponding to the shape of the substrate W determined in step S2 from among this correspondence.

[0098] The control unit 18 may determine the prescribed value corresponding to the shape of the substrate W as follows. For example, the control unit 18 stores in advance the correspondence between the blowing amount QT and the prescribed value. The control unit 18 determines the prescribed value corresponding to the blowing amount QT determined according to the shape of the substrate W in step S3 from among this correspondence. The control unit 18 stores in advance the correspondence between the shape of the substrate W, the blowing amount QT, and the prescribed value.

[0099] The prescribed value is, in advance, the value of the force N received from the substrate W detected by the tactile sensor 33c when the gas outlet 34 blows out the gas with the blowing amount QT onto the lower surface 26 of the normal substrate WN or the special substrate WS.

[0100] The special substrate WS has lower rigidity than the normal substrate WN. The blowing amount QT of the gas blown onto the lower surface 26 of the special substrate WS is smaller than that of the normal substrate WN in consideration of the low rigidity of the special substrate WS. Therefore, the prescribed value of the special substrate WS is smaller than the prescribed value of the normal substrate WN.

[0101] For example, when the shape of the substrate W supported by the fixed pin 33 is the normal substrate WN, in response to determining that the blowing amount QT is the first blowing amount Q1a, the control unit 18 determines the rotation specified value as the first rotation specified value N1a and determines the processing specified value as the first processing specified value N1a + α. When the shape of the substrate W supported by the fixed pin 33 is the special substrate WS, in response to determining that the blowing amount QT is the second blowing amount Q2a smaller than the first blowing amount Q1a, the control unit 18 determines the rotation specified value as the second rotation specified value N2a smaller than the first rotation specified value N1a and determines the processing specified value as the second processing specified value N2a + α smaller than the first processing specified value N1a + α.

[0102] Step S5 The control unit 18 controls the processing unit 14. The control unit 18 controls the blowing adjustment unit 40 based on the determined blowing amount QT. For example, when the shape of the substrate W is the shape of the normal substrate WN, the blowing amount QT targeted by the blowing adjustment unit 40 is the first blowing amount Q1a corresponding to the shape of the normal substrate WN. For example, when the shape of the substrate W is the shape of the special substrate WS, the blowing amount QT targeted by the blowing adjustment unit 40 is the second blowing amount Q2a corresponding to the shape of the special substrate WS.

[0103] Step S6 According to the control by the control unit 18, the processing unit 14 performs processing on the substrate W. Specifically, the blowing adjustment unit 40 supplies gas to the gas outlet 34 at the determined blowing amount QT. For example, when the shape of the substrate W is the shape of the normal substrate WN, the gas outlet 34 blows gas onto the lower surface 26 of the normal substrate WN at the first blowing amount Q1a corresponding to the shape of the normal substrate WN. For example, when the shape of the substrate W is the shape of the special substrate WS, the gas outlet 34 blows gas onto the lower surface 26 of the special substrate WS at the second blowing amount Q2a corresponding to the shape of the special substrate WS.

[0104] The gas blown out from the blowout port 34 is supplied between the upper surface 32a of the plate 32 and the lower surface 26 of the substrate W supported by the fixing pins 33. The gas advances outward along the lower surface 26 of the substrate W. Then, the gas flows out from the space between the upper surface 32a of the plate 32 and the lower surface of the substrate W supported by the fixing pins 33. The gas flows out into the space outside the peripheral edge 22 of the substrate W. Due to such a gas flow, a suction force corresponding to the first rotation specified value N1a acts on the substrate W. The substrate holding portion 31 holds the substrate W on the fixing pins 33 by the suction force. When the gas reaches the first blowout amount Q1a, a suction force corresponding to the first processing specified value N1a + α acts on the substrate W.

[0105] When a suction force corresponding to the first processing specified value N1a + α acts on the substrate W, the rotation drive unit 45 rotates the substrate holding portion 31. As a result, the substrate W supported by the fixing pins 33 rotates. The substrate W supported by the fixing pins 33 rotates integrally with the plate 32.

[0106] With the substrate W attracted to the fixing pins 33 by a suction force corresponding to the first processing specified value N1a + α and the plate 32 maintaining a specified rotation speed, the control unit 18 causes the flow rate adjustment unit 57 to supply the necessary processing liquid to the nozzle 52. The nozzle 52 discharges the processing liquid. As a result, the processing liquid supply unit 51 supplies the processing liquid to the upper surface 27 of the substrate W. The processing liquid scatters outward from the substrate W supported by the fixing pins 33. The guard 61 collects the scattered processing liquid.

[0107] Even though the gas with the blowout amount QT appropriately preset in advance according to the shape of the substrate W is supplied to the lower surface 26 of the substrate W, there may be a case where a suction force corresponding to the required rotation specified value or processing specified value does not act on the substrate W.

[0108] For example, depending on the type of film formed on the substrate W, the frictional force between the substrate W and the fixing pin 33 may decrease. The type of film formed on the substrate W is, for example, an oxide film. The oxide film formed on the substrate W is in contact with the fixing pin 33. In such a case, even when an attracting force acts on the substrate W supported by the fixing pin 33, the substrate W is likely to move horizontally with respect to the fixing pin 33. As the substrate W becomes more likely to move, the attracting force acting on the substrate W supported by the fixing pin 33 becomes smaller.

[0109] For example, the frictional force generated between the fixing pin 33 and the substrate W by the processing liquid supplied by the processing liquid supply unit 51 may decrease. The processing liquid may flow from the main part 23 of the substrate W supported by the fixing pin 33 into the peripheral part 22. The processing liquid that has flowed into the peripheral part 22 of the substrate W may enter between the fixing pin 33 and the substrate W. As a result, the frictional force between the fixing pin 33 and the substrate W may become lower. As a result, the attracting force acting on the substrate W supported by the fixing pin 33 becomes smaller.

[0110] As described above, when the frictional force between the substrate W and the fixing pin 33 decreases during the processing of the substrate W, when an attracting force according to Bernoulli's principle acts on the substrate W supported by the fixing pin 33, the force N received by the fixing pin 33 from the substrate W does not reach the attracting force corresponding to the required rotation regulation value or processing regulation value. By detecting the force N received by the tactile sensor 33c from the substrate W via the fixing pin 33b, the control unit 18 detects a decrease in the frictional force between the substrate W and the fixing pin 33. Then, the control unit 18 controls the processing unit 14 such as adjusting the blowing amount QT based on the detection result. Thereby, it is possible to prevent the processing of the substrate W from continuing without reaching the attracting force corresponding to the required rotation regulation value or processing regulation value. Note that the processing of the substrate W includes processing for rotating until a specified rotation speed is reached and processing for supplying a processing liquid to the substrate W rotating at the specified rotation speed. This will be specifically described below.

[0111] Step S7 The control unit 18 detects the force N received from the substrate W by the tactile sensor 33c via the fixed pin 33b. When an attractive force according to Bernoulli's principle acts on the substrate W supported by the fixed pin 33, the tactile sensor 33c detects the pressing force with which the substrate W presses against the support pin 33. This pressing force is the force N received from the substrate W. The tactile sensor 33c sends the information on the detected pressing force to the control unit 18. The control unit 18 acquires the information on the pressing force sent from the tactile sensor 33c.

[0112] Step S8 The control unit 18 determines whether or not the detected force N received from the substrate W has reached a specified value.

[0113] For example, when the shape of the substrate W supported by the fixed pin 33 is the shape of the normal substrate WN, the control unit 18 determines whether or not the detected force N received from the substrate W has reached the first rotation specified value N1a in accordance with determining the rotation specified value as the first rotation specified value N1a. The control unit 18 determines whether or not the detected force N received from the substrate W has reached the first processing specified value N1a + α in accordance with determining the processing specified value as the first processing specified value N1a + α. Further, when the shape of the substrate W supported by the fixed pin 33 is the special substrate WS, the control unit 18 determines whether or not the detected force N received from the substrate W has reached the second rotation specified value N2a in accordance with determining the rotation specified value as the second rotation specified value N2a. The control unit 18 determines whether or not the detected force N received from the substrate W has reached the second processing specified value N2a + α in accordance with determining the processing specified value as the second processing specified value N2a + α.

[0114] Step S9 When the detected force N received from the substrate W has not reached the specified value, the control unit 18 changes the blowing amount QT. In this case, it is presumed that the event that the frictional force between the substrate W and the fixed pin 33 described above becomes low has occurred.

[0115] For example, when the shape of the substrate W supported by the fixed pin 33 is the shape of the normal substrate WN, if the force N received from the detected substrate W has not reached the first rotation specified value N1a or the first processing specified value N1a + α, the control unit 18 changes the blowing amount QT to a blowing amount QT larger than the current blowing amount QT.

[0116] Specifically, for example, the blowing amount QT is changed to a third blowing amount Q3a larger than the first blowing amount Q1a. The third blowing amount Q3a may be a value that increases step by step. The third blowing amount Q3a is a value included in an appropriate range as the blowing amount QT for the normal substrate WN.

[0117] For example, when the shape of the substrate W supported by the fixed pin 33 is the shape of the special substrate WS, if the force N received from the detected substrate W has not reached the second rotation specified value N1a or the second processing specified value N2a + α, the control unit 18 changes the blowing amount QT to a blowing amount QT larger than the current blowing amount QT.

[0118] Specifically, for example, the blowing amount QT is changed to a fourth blowing amount Q4a larger than the second blowing amount Q2a. The second blowing amount Q2a may be a value that increases step by step. The second blowing amount Q2a is a value included in an appropriate range as the blowing amount QT for the special substrate WS.

[0119] The control unit 18 repeats the process of step 9 for a predetermined period or a predetermined number of times. When the force N received from the detected substrate W reaches the specified value, the control unit 18 continues the processing of the substrate W. When the processing of the substrate W is completed, the control unit 18 stops the blowing of the gas and the rotation of the plate 32.

[0120] Step S10 If the control unit 18 changes the blowing amount QT for a predetermined period or a predetermined number of times and the force N received from the detected substrate W does not reach the specified value, the control unit 18 stops the processing of the substrate W by the processing unit 14. Thereby, an event that may occur based on the decrease in the frictional force between the substrate W and the fixed pin 33 can be prevented.

[0121] <Graph (1) showing the relationship between the force N received from the substrate of the first embodiment and the elapsed time> With reference to the drawings, the relationship between the force N received from the substrate of the first embodiment and the elapsed time will be described. Also, the relationship between the adjusted ejection amount and the elapsed time will be described. In particular, in graph (1), the case where the force N received from the substrate W detected before the processing liquid supply process does not reach the specified value required for the processing liquid supply process for the substrate W will be described.

[0122] FIG. 9(a) is a graph showing the relationship between the force N received from the substrate of the first embodiment and the elapsed time, and (b) is a graph showing the relationship between the adjusted ejection amount QT of the first embodiment and the elapsed time. In the graph shown in (a), the substrate W to be processed is a normal substrate WN. Also, in the graph shown in (a), one type of processing liquid is supplied. The timing shown in the graph is common to the graphs of (a) and (b).

[0123] Timing T1 is the timing when the normal substrate WN is placed on the fixing pin 33. Timing T2 is the timing when the supply of nitrogen (N 2 ) gas is started. Note that the timing when the normal substrate WN is placed on the fixing pin 33 and the timing when the supply of nitrogen (N 2 ) gas is started may be opposite.

[0124] Also, timing T2 is the timing when the force N received from the normal substrate WN starts to be detected by the tactile sensor 33c shown in (a).

[0125] Nitrogen gas is supplied by the ejection adjustment unit 40 until it reaches the first ejection amount Q1a. Nitrogen gas reaches the first ejection amount Q1a at timing T4.

[0126] At timing T3, the force N received from the detected normal substrate WN reaches the first rotation specified value N1a. The first rotation specified value N1a is the value of the force N received from the normal substrate WN necessary to prevent the normal substrate WN from coming off the fixing pin 33 while the plate 32 is rotating. That is, the first rotation specified value N1a is the target value of the force N received from the normal substrate WN necessary to rotate the normal substrate WN. When the suction force corresponding to the first rotation specified value N1a is applied to the normal substrate WN, the normal substrate WN does not come off the fixing pin 33 unless the frictional force between the fixing pin 33 and the normal substrate WN described later decreases. Note that from timing T2 to timing T3 is a feedback control period for the control unit 18 to cause the force N received from the detected normal substrate WN to reach the first rotation specified value N1a.

[0127] At timing T3, when the control unit 18 obtains the suction force corresponding to the first rotation specified value N1a, it starts the rotation of the plate 32 with respect to the rotation driving unit 45. The plate 32 reaches the first rotation speed, which is the specified rotation speed, at timing T4, for example. From timing T3 to timing T5, the normal substrate WN rotates at the first rotation speed.

[0128] At timing T4, the force N received from the detected normal substrate WN reaches the first processing specified value N1a + α. The first processing specified value N1a + α is the force required when the processing liquid supply unit 51 supplies the processing liquid to the upper surface 27 of the normal substrate WN rotating at the first rotation speed.

[0129] The control unit 18 causes the processing liquid supply unit 51 to supply the processing liquid to the upper surface 27 of the normal substrate WN, for example, at timing T4 when the detected force N received from the normal substrate WN reaches the first processing specified value N1a + α. The value of “+α” varies depending on the type of the processing liquid and the flow rate of the processing liquid.

[0130] From timing T3 to timing T4, it is a feedback control period for causing the force N received from the detected normal substrate WN to reach from the first rotation specified value N1a to the first processing specified value N1a + α. From timing T4 to timing T5, it is a feedback control period for maintaining the force N received from the detected normal substrate WN at the first processing specified value N1a + α.

[0131] In this example, since nitrogen gas is supplied until the first ejection amount Q1a is reached, the force N received from the detected normal substrate WN continues to increase after exceeding the first rotation specified value N1a at timing T3 until it reaches the first processing specified value N1a + α at timing T4. Note that the first processing specified value N1a + α is set as a value within the range where the normal substrate WN can be processed normally. Therefore, even if the force N received from the detected normal substrate WN increases from the first rotation specified value N1a to the first processing specified value N1a + α, no problem occurs with the normal substrate WN.

[0132] Also, by increasing α more than the first rotation specified value N1a, it is possible to prevent the suction force from decreasing below the first rotation specified value N1a due to the change in the air flow of the nitrogen gas N2 that occurs when the processing liquid is supplied to the upper surface 27 of the normal substrate WN while remaining at the first rotation specified value N1a. As a result, the normal substrate WN rotates while being given the necessary suction force even during the supply of the processing liquid.

[0133] From timing T4 to timing T5, it is a period during which the processing liquid is supplied to the normal substrate WN. The control unit 18 determines whether the force N received from the detected normal substrate WN is below the first processing specified value N1a + α during the processing liquid supply period, and whether the force N received from the detected normal substrate WN is equal to or greater than the first rotation specified value N1a when it is below the first processing specified value N1a + α. In this example, since the force N received from the detected normal substrate WN maintains the first processing specified value N1a + α, the supply of the processing liquid continues as it is. The processing liquid is supplied, for example, to the back surface of the substrate W (the upper surface 27 of the substrate W) by the processing liquid supply unit 51.

[0134] When the force N received from the detected normal substrate WN is less than the first processing specified value N1a + α, and the force N received from the detected normal substrate WN is not less than the first rotation specified value N1a, the control unit 18 adjusts the blowing amount QT so that the force N received from the detected normal substrate WN reaches the first processing specified value N1a + α again. This point will be described later with reference to FIG. 10.

[0135] When the force N received from the detected normal substrate WN is less than the first processing specified value N1a + α and the force N received from the detected normal substrate WN is less than the first rotation specified value N1a, there is a risk that the normal substrate WN may come off the fixing pin 33. Therefore, the control unit 18 stops the processing. This point will be described later with reference to FIG. 11.

[0136] From timing T5 to timing T6, it is a process of ending the substrate processing on the normal substrate WN. The nitrogen gas is gradually reduced from the first blowing amount Q1a by the blowing adjustment unit 40 and becomes 0 at timing T6. The rotation of the plate 32 is gradually decelerated by the rotation drive unit 45 and becomes 0 at timing T6. After timing T6, the normal substrate WN that has completed the substrate processing is carried out from the fixing pin 33.

[0137] <Graph (2) showing the relationship between the force N received from the substrate in the first embodiment and the elapsed time> The relationship between the force N received from the substrate in the first embodiment, which is different from FIG. 9 described above, and the elapsed time will be described. Also, the relationship between the adjusted blowing amount and the elapsed time will be described. In particular, in graph (2), the case where the force N received from the substrate W detected during the processing liquid supply process is less than the first processing specified value N1a + α required for the processing liquid supply process for the substrate W but not less than the first rotation specified value N1a will be described.

[0138] FIG. 10(a) is a graph showing the relationship between the force N received from the substrate in the first embodiment and the elapsed time, and (b) is a graph showing the relationship between the adjusted blowing amount QT in the first embodiment and the elapsed time. The substrate W to be processed is the normal substrate WN. The timings shown in the graph are common to the graphs of (a) and (b).

[0139] The timings T1, T2, T3, and T4 shown in graph (2) are the same as those in graph (1) described with reference to FIG. 9.

[0140] From timing T4 to timing T5, the force N received from the detected normal substrate WN is supposed to maintain the first processing specified value N1a + α necessary for the processing liquid supply process. However, as described above, for example, the frictional force generated between the fixing pin 33 and the substrate W may decrease due to the processing liquid supplied by the processing liquid supply unit 51. In such a case, for example, from timing T4a to timing T4b, the force N received from the detected normal substrate WN decreases to a force X1 that is lower than, for example, the first processing specified value N1a + α and equal to or higher than the first rotation specified value N1a. Therefore, during the period X from timing T4b to timing T4c, the control unit 18 determines whether the force X1 is a false detection by determining whether the force N received from the detected normal substrate WN returns to the first processing specified value N1a + α while maintaining the first ejection amount Q1a.

[0141] If, during period X, the force N received from the detected normal substrate WN returns to the first processing specified value N1a + α, the control unit 18 determines that the force X1 is a false detection and continues the processing liquid supply process for the normal substrate WN as it is. If, during period X, the force N received from the detected normal substrate WN does not return to the first processing specified value N1a + α while maintaining the first ejection amount Q1a, at timing T4c, the control unit 18 determines that the detection of the force X1 is correct and changes the ejection amount QT from the first ejection amount Q1a to the third ejection amount Q3a. The control unit 18 determines whether the force N received from the detected normal substrate WN returns to the first processing specified value N1a + α during the process in which the ejection amount QT increases from the first ejection amount Q1a to the third ejection amount Q3a. Note that, without providing period X, the ejection amount QT may be immediately changed to the third ejection amount Q3a as soon as the force N received from the detected normal substrate WN decreases to the force X1.

[0142] At timing T4d, the force N received from the detected normal substrate WN returns to the first processing specified value N1a + α. Thereafter, at timing T4e, the blowing amount QT reaches the third blowing amount Q3a. In the graph shown in (2), the force N received from the normal substrate WN corresponding to the third blowing amount Q3a should be greater than the first processing specified value N1a + α, but it is converged to the first processing specified value N1a + α by feedback control. The control unit 18 gradually makes the blowing amount QT of the nitrogen gas constant at the timing when the detected force N received from the normal substrate WN reaches the first processing specified value N1a + α, thereby maintaining the detected force N received from the normal substrate WN at N1a + α. Thereby, waste of the supply of the nitrogen gas can be eliminated. Note that if the force N received from the normal substrate WN corresponding to the third blowing amount Q3a is a value that can normally process the normal substrate WN, the control unit 18 may increase the force N received from the normal substrate WN to the value corresponding to the third blowing amount Q3a.

[0143] From timing T4e to timing T5, with the detected force N received from the normal substrate WN maintained at the first processing specified value N1a + α, the control unit 18 continues the processing liquid supply process to the normal substrate WN as it is.

[0144] From timing T5 to timing T6, similar to the graph (1), it is a process of ending the substrate processing for the normal substrate WN.

[0145] During the period Z from timing T4e to timing T4z, the control unit 18 determines whether the force N received from the detected normal substrate WN returns to the first processing specified value N1a + α while maintaining the third ejection amount Q3a. If the force N received from the normal substrate WN detected during the period Z returns to the first processing specified value N1a + α, the processing liquid supply process for the normal substrate WN is continued as it is, as described above. If the force N received from the normal substrate WN detected during the Z period does not return to the first processing specified value N1a + α, the control unit 18 stops the rotation of the plate 32 at the end of the Z period. After stopping the rotation of the plate 32, the control unit 18 stops the supply of nitrogen gas. Thereby, it is possible to prevent the processing liquid supply process from continuing in a state where the frictional force between the substrate W and the fixing pin 33 is reduced, that is, in a state where the necessary suction force is not applied to the normal substrate WN.

[0146] Also, in the graph shown in (2), for example, when the force N received from the detected normal substrate WN decreases to a value lower than the first rotation specified value N1a from timing T4a to timing T4b, the control unit 18 stops the rotation of the plate 32 and stops the supply of nitrogen gas. The value of the force N received from the normal substrate WN that is lower than the first rotation specified value N1a includes 0 and values that are infinitely close to 0. Thereby, it is possible to prevent the processing liquid supply process from continuing in a state where the frictional force between the substrate W and the fixing pin 33 is significantly reduced. In this process, the above-described period X may be provided. It is possible to determine whether the decrease in the detected force N received from the normal substrate WN is a false detection.

[0147] <Graph (3) showing the relationship between the force N received from the substrate in the first embodiment and the elapsed time> The relationship between the force N received from the substrate in the first embodiment, which is different from FIGS. 9 and 10 described above, and the elapsed time will be described. Also, the relationship between the adjusted ejection amount and the elapsed time will be described. In particular, in graph (3), the case where the force N received from the substrate W detected before the rotation of the substrate does not reach the rotation specified value required for the processing liquid supply process for the substrate W will be described.

[0148] FIG. 11(a) is a graph showing the relationship between the force N received from the substrate of the first embodiment different from FIGS. 9 and 10 and the elapsed time, and (b) is a graph showing the relationship between the adjusted ejection amount QT of the first embodiment and the elapsed time. The substrate W to be processed is a normal substrate WN. The timings shown in the graphs are common to the graphs (a) and (b).

[0149] The timings T1 and T2 are the same as those of the graphs (1) and (2) described with reference to FIGS. 9 and 10.

[0150] At timing T3, the detected force N received from the normal substrate WN is supposed to reach the first rotation specified value N1a. However, as described above, for example, when the clearance between the fixed pin 33 and the lower surface 26 of the substrate W is not sufficient, or when a decrease in the frictional force generated between the fixed pin 33 and the normal substrate W occurs. In such a case, the detected force N received from the normal substrate WN may be Y1 which is lower than the first rotation specified value N1a. Y1 includes the case where the detected force N received from the normal substrate WN is 0 or a value infinitely close to 0. During the period Y from timing T3 to timing T3a, the control unit 18 determines whether Y1 is a false detection, and determines whether the detected force N received from the normal substrate WN reaches the first rotation specified value N1a while maintaining the first ejection amount Q1a.

[0151] If the detected force N received from the normal substrate WN reaches the first rotation specified value N1a during the period Y, the control unit 18 starts the rotation of the plate 32. If the detected force N received from the normal substrate WN is Y1 at timing T3a, the control unit 18 changes the ejection amount QT from the first ejection amount Q1a to the third ejection amount Q3a.

[0152] While the blowing amount QT ranges from the first blowing amount Q1a to the third blowing amount Q3a, the control unit 18 determines whether the force N received from the detected normal substrate WN reaches the first rotation specified value N1a and the first processing specified value N1a + α. At timing T3b, the force N received from the detected normal substrate WN reaches the first rotation specified value N1a. After reaching the first rotation specified value N1a, at timing T3c, the force N received from the detected normal substrate WN reaches the first processing specified value N1a + α.

[0153] At timing T3d, the blowing amount QT reaches the third blowing amount Q3a. In the graph shown in (3), the force N received from the normal substrate WN corresponding to the third blowing amount Q3a should be greater than the first processing specified value N1a + α. However, similar to (2), it converges to the first processing specified value N1a + α by feedback control. This can eliminate the waste of nitrogen gas supply. Note that the control unit 18 may increase the force N received from the normal substrate WN to a value corresponding to the third blowing amount Q3a, similar to (2).

[0154] From timing T3c to timing T5, while the detected force N received from the normal substrate WN is maintained at N1a + α, the control unit 18 executes a processing liquid supply process for the normal substrate WN.

[0155] From timing T5 to timing T6, similar to graph (1), it is a process to end the substrate process for the normal substrate WN.

[0156] During the period Z from timing T3d to timing T4x, the control unit 18 determines whether the force N received from the detected normal substrate WN reaches the first rotation expected value N1a and the first processing specified value N1a + α while maintaining the third blowing amount Q3a. If the force N received from the normal substrate WN detected during period Z reaches the first processing specified value N1a + α, the rotation of the plate 32 is started. If the force N received from the normal substrate WN detected during period Z reaches the first processing specified value N1a + α, the processing liquid supply process for the normal substrate WN is started.

[0157] When the force N received from the normal substrate WN detected during period Z does not reach the first rotation specified value N1a, the control unit 18 stops the rotation of the plate 32 at the end of period Z. Thereby, it is possible to prevent the rotation of the plate 32 from starting in a state where the frictional force between the substrate W and the fixing pin 33 is reduced, that is, in a state where the suction force corresponding to the first rotation specified value N1a is not applied to the normal substrate WN.

[0158] Even when the force N received from the normal substrate WN detected during period Z does not reach the first processing specified value N1a + α, the control unit 18 stops the rotation of the plate 32 at the end of period Z. Thereby, it is possible to prevent the start of the processing liquid supply process to the normal substrate WN in a state where the frictional force between the substrate W and the fixing pin 33 is reduced, that is, in a state where the suction force corresponding to the first processing specified value N1a + α is not applied to the normal substrate WN.

[0159] Also, in the graph shown in (3), when the detected force N received from the normal substrate WN is a value that is 0 or infinitely close to 0 from the detection start point, the control unit 18 may stop the supply of nitrogen gas. Thereby, it is possible to prevent the start of the process of supplying gas to the substrate W when the substrate W is not correctly placed on the fixing pin 33 from the beginning.

[0160] <Effect of the First Embodiment> The substrate processing apparatus 1 includes a processing unit 14 that processes a substrate, and a control unit 18 that controls the processing unit 14. The processing unit 14 includes a plate 32 having an upper surface 32a, a rotational drive unit 45 that rotates the plate 32, fixed pins 33(33a, 33b) that project upward from the upper surface 32a of the plate 32 and contact at least one of the lower surface 26 and the peripheral edge 22 of the substrate W, and support the substrate W at a position higher than the upper surface 32a of the plate 32, a gas outlet 34 formed on the upper surface 32a of the plate 32 that blows out gas upward, a blowing adjustment unit 40 that adjusts the flow rate of the gas blown out from the gas outlet 34, and a tactile sensor 33c that detects the force N received from the substrate W when an attractive force according to Bernoulli's principle acts on the substrate W supported by the fixed pin 33b. The control unit 18 controls the processing unit 14 based on the information on the force N received from the substrate W detected by the tactile sensor 33c. That is, the fixed pins 33 support the substrate W at a position higher than the upper surface 32a of the plate 32. The gas outlet 34 blows out gas upward from the upper surface 32a of the plate 32a. The blowing adjustment unit 40 adjusts the flow rate of the gas blown out from the gas outlet 34. Thereby, an attractive force according to Bernoulli's principle acts on the substrate W supported by the fixed pin 33. The tactile sensor 33c detects the force N received from the substrate W when an attractive force according to Bernoulli's principle acts on the substrate W supported by the fixed pin 33. The control unit 18 controls the processing unit 14 based on the information on the force N received from the substrate W detected by the tactile sensor 33c. As a result, when the frictional force between the substrate W and the fixed pin 33 decreases, the force N received from the substrate W when an attractive force according to Bernoulli's principle acts on the substrate W supported by the fixed pin 33 no longer sufficiently acts on the substrate W. By the tactile sensor 33c detecting the force N received from the substrate W, the control unit 18 can detect a decrease in the frictional force between the substrate W and the fixed pin 33. Based on the detected information on the force N received from the substrate W, as an example of controlling the processing unit 14, the control unit 18 changes the blowing amount QT, so that an event that may occur based on a decrease in the frictional force between the substrate W and the fixed pin 33 can be reduced. As a result, the substrate W can be processed efficiently.

[0161] During the processing liquid supply period, when the force N received from the substrate W decreases to a force that is less than the processing specified value and equal to or greater than the rotation specified value, the control unit 18 adjusts the blowing amount QT so that the force N received from the substrate W returns to the processing specified value. Thereby, during the processing liquid supply period, when the force N received from the substrate W becomes less than the processing specified value and equal to or greater than the rotation specified value due to a decrease in the frictional force between the fixed pin 33 and the substrate W, the force N received from the substrate W can be returned to the force necessary to continue the processing liquid supply process during the processing of the substrate W by the processing unit 14.

[0162] Further, after the substrate W is placed on the fixed pin 33 and before the plate 32 starts to rotate, when the force N received from the substrate W does not reach the rotation specified value or the processing specified value despite supplying the gas with the required blowing amount QT, the control unit 18 adjusts the blowing amount QT so that the force N received from the substrate W becomes equal to or greater than the rotation specified value and the processing specified value. Thereby, before the processing liquid supply period, when the force N received from the substrate W does not reach the rotation specified value or the processing specified value due to a decrease in the frictional force between the fixed pin 33 and the substrate W, the force N received from the substrate W can be made the force necessary to start the rotation of the substrate W and the processing liquid supply process to the substrate W.

[0163] The specified values are the predetermined rotation specified value and processing specified value for the processing unit 14 to start the processing on the substrate W (rotation of the substrate W and processing liquid supply process). Thereby, when the detected force N received from the substrate W does not exceed the rotation specified value and the processing specified value for the processing unit 14 to start the processing on the substrate W, the force N received from the substrate W can be made the force necessary for the rotation of the substrate W and the processing of the processing liquid supply (the force corresponding to the rotation specified value and the processing specified value).

[0164] The specified value is a predetermined processing specified value for continuing processing on the substrate W while the processing unit 14 is performing processing (processing liquid supply processing) on ​​the substrate W. Thereby, when the detected force N received from the substrate W falls below the processing specified value necessary for continuing processing on the substrate W while the processing unit 14 is performing processing on the substrate W, the force N received from the substrate can be set to the force necessary for continuing processing on the substrate W (a force corresponding to the processing specified value).

[0165] The specified value is a value that is determined in advance for each type of shape of the substrate W. This makes it possible to determine whether the force N received from the detected substrate W has exceeded the rotation specified value or the processing specified value based on a value that corresponds to the type of shape of the substrate W. The values ​​that correspond to the type of shape of the substrate W are the first rotation specified value N1a and the first processing specified value N1a+α for a normal substrate WN, and the second rotation specified value N2a and the second processing specified value N2a+α for a special substrate WS. Although not shown in the drawings, the second rotation specified value N2a and the second processing specified value N2a+α are similar graphs in which the values ​​of the force N received from the detected substrate are different from those in the graphs (1) to (3) shown in Figs. 9, 10, and 11.

[0166] [Second embodiment] A substrate processing apparatus 1 according to a second embodiment will be described with reference to the drawings. Note that the same components as those in the first embodiment are denoted by the same reference numerals and detailed description thereof will be omitted.

[0167] <Operation Example of Processing Unit 14 in Second Embodiment> 12 is a flowchart showing the procedure of control of the control unit 18 and operation of the processing unit 14 in the second embodiment. In an example of operation of the processing unit 14 in the second embodiment, when the force N received from the substrate W, detected by the tactile sensor 33c via the fixing pin 33b, is less than a specified value predetermined according to the type of film formed on the substrate W, the control unit 18 changes the blow-out amount QT so that it becomes equal to or greater than the specified value during operation of the processing unit 14. In the second embodiment, the blow-out amount QT is predetermined according to the type of film, and a reference value corresponding to the blow-out amount QT is predetermined.

[0168] Step S21 The control unit 18 refers to the processing recipe and specifies the processing conditions of the processing unit 14. An example of the processing conditions of the processing unit 14 is the type of film formed on the substrate W. Specifically, the control unit 18 specifies the type of film formed on the lower surface 26 of the substrate W, that is, the surface where the substrate W contacts the fixing pins 33. The type of film is, for example, an oxide film. Note that the type of film is read as the detection result of the barcode reader 4. The barcode attached to the carrier C includes information regarding the type of film formed on the substrate W.

[0169] Step S22 The control unit 18 determines the blowing amount QT according to the type of film. For example, the control unit 18 stores in advance the correspondence between the type of film and the blowing amount QT. The control unit 18 determines the blowing amount QT corresponding to the type of film specified in step S21 from this correspondence.

[0170] Specifically, the control unit 18 determines the blowing amount QT such that the blowing amount QT increases as the type of film is more likely to reduce the frictional force between the substrate W and the fixing pins 33.

[0171] For example, when the type of film is film A which is not an oxide film, the control unit 18 determines the blowing amount QT as the first blowing amount Q1b. When the type of film is film B which is an oxide film, the control unit 18 determines the blowing amount QT as the second blowing amount Q2b which is larger than the first blowing amount Q1b.

[0172] Step S23 The control unit 18 determines a specified value according to the type of film. For example, the control unit 18 stores in advance the correspondence between the type of film and the specified value. The control unit 18 determines the specified value corresponding to the type of film specified in step S21 from this correspondence.

[0173] The control unit 18 may determine a specified value according to the type of the film as follows. For example, the control unit 18 stores in advance the correspondence between the blowing amount QT and the specified value. The control unit 18 determines a specified value corresponding to the blowing amount QT determined according to the type of the film in step S22 from among this correspondence. The control unit 18 stores in advance the correspondence between the type of the film, the blowing amount QT, and the specified value.

[0174] The specified value is, in advance, the value of the force N received from the substrate W detected by the tactile sensor 33c when the gas outlet 34 blows out the gas with the blowing amount QT onto the lower surface 26 of the substrate W on which the film A or the film B is formed.

[0175] The frictional force between the substrate W formed with the B film and the fixing pin 33 is lower than the frictional force between the substrate W formed with the A film and the fixing pin 33. Therefore, the specified value of the substrate W formed with the B film is set to be larger than the specified value of the substrate W formed with the A film.

[0176] For example, when the A film is formed on the substrate W, the control unit 18 determines the rotation specified value to be the first rotation specified value N1b and determines the processing specified value to be the first processing specified value N1b + α in response to determining that the blowing amount QT is the first blowing amount Q1b. When the B film is formed on the substrate W, the control unit 18 determines the rotation specified value to be the second rotation specified value N2b larger than the first rotation specified value N1b and determines the processing specified value to be the second processing specified value N2b + α larger than the first processing specified value N1b + α in response to determining that the blowing amount QT is the second blowing amount Q2b larger than the first blowing amount Q1b.

[0177] Step S24 The control unit 18 controls the processing unit 14. The control unit 18 controls the blowing adjustment unit 40 based on the determined blowing amount QT. For example, when the film formed on the substrate W is the A film, the blowing amount QT targeted by the blowing adjustment unit 40 is the first blowing amount Q1b corresponding to the A film. For example, when the film formed on the substrate W is the B film, the blowing amount QT targeted by the blowing adjustment unit 40 is the second blowing amount Q2b corresponding to the B film.

[0178] Step S25 According to the control by the control unit 18, the processing unit 14 performs processing on the substrate W. Specifically, the blowing adjustment unit 40 supplies gas to the gas outlet 34 with the determined blowing amount QT of the gas. For example, when the film formed on the substrate W is the A film, the gas outlet 34 blows out the gas to the lower surface 26 of the substrate W on which the A film is formed with the first blowing amount Q1b corresponding to the A film. For example, when the film formed on the substrate W is the B film, the gas outlet 34 blows out the gas to the lower surface 26 of the substrate W on which the B film is formed with the second blowing amount Q2b corresponding to the B film.

[0179] In this way, the blowing amount QT is set according to the type of the film formed on the substrate W, that is, the frictional force between the substrate W on which the film is formed and the fixing pin 33. Therefore, the suction force set according to the type of the film formed on the substrate W acts on the substrate W supported by the fixing pin 33.

[0180] For example, when the type of the film formed on the substrate W is the A film, a suction force corresponding to the first rotation specified value N1b corresponding to the first blowing amount Q1b acts on the substrate W supported by the fixing pin 33. When the gas reaches the first blowing amount Q1b, a suction force corresponding to the first processing specified value N1b + α acts on the substrate W. For example, when the type of the film formed on the substrate W is the B film, a suction force corresponding to the second rotation specified value N2b corresponding to the second blowing amount Q2b acts on the substrate W supported by the fixing pin 33. When the gas reaches the second blowing amount Q2b, a suction force corresponding to the second processing specified value N2b + α acts on the substrate W.

[0181] However, even if the blowing amount QT is set in advance according to the type of the film formed on the substrate W in this way, as described in the first embodiment, there may be a case where the suction force corresponding to the required rotation specified value or processing specified value does not act on the substrate W. Therefore, similar to the first embodiment, by detecting the force N received by the tactile sensor 33c from the substrate W via the fixing pin 33b, the control unit 18 detects a decrease in the frictional force between the substrate W and the fixing pin 33, and controls the processing unit 14 such as adjusting the blowing amount QT based on the detection result.

[0182] Step S26 Similar to the first embodiment, the control unit 18 detects the force N received from the substrate W by the tactile sensor 33c via the fixed pin 33b.

[0183] Step S27 The control unit 18 determines whether or not the detected force N received from the substrate W has reached a specified value.

[0184] For example, when the type of the film formed on the substrate W is the A film, the control unit 18 determines whether or not the detected force N received from the substrate W on which the A film is formed has reached the first rotation specified value N1b. The control unit 18 determines whether or not the detected force N received from the substrate W on which the A film is formed has reached the first processing specified value N1b + α. When the type of the film formed on the substrate W is the B film, the control unit 18 determines whether or not the detected force N received from the substrate W on which the B film is formed has reached the second rotation specified value N2b. The control unit 18 determines whether or not the detected force N received from the substrate W on which the B film is formed has reached the first processing specified value N1b + α.

[0185] In this way, the specified values for determining whether or not to perform the process of changing the blowing amount QT are made different depending on whether the type of the film is the A film or the B film. Thereby, when the frictional force between the substrate W and the fixed pin 33 is reduced, it is possible to determine whether or not to perform the process of changing the blowing amount QT according to the type of the film.

[0186] As a result, when an event occurs that reduces the frictional force between the substrate W and the fixed pin 33, in the case of the A film, it may be determined that the process of changing the blowing amount QT is to be performed. However, when the same event occurs, in the case of the B film where the force N received from the substrate W is large, it may be determined that the process of changing the blowing amount QT is not to be performed. Therefore, even if the same event occurs, in a case where it is not necessary to change the blowing amount QT, the process can proceed without changing the blowing amount QT.

[0187] Step S28 Similar to the first embodiment, when the force N received from the detected substrate W has not reached the specified value, the control unit 18 changes the ejection amount QT.

[0188] For example, when the film formed on the substrate W is the A film, if the force N received from the detected substrate W on which the A film is formed has not reached the first rotation specified value N1b or the first processing specified value N1b + α, the control unit 18 changes the ejection amount QT to an ejection amount Q3b larger than the current first ejection amount Q1b.

[0189] For example, when the film formed on the substrate W is the B film, if the force N received from the detected substrate W on which the B film is formed has not reached the second rotation specified value N2b or the second processing specified value N2b + α, the control unit 18 changes the ejection amount QT to an ejection amount Q4b larger than the current second ejection amount Q2b.

[0190] Step S29 If the force N received from the detected substrate W does not reach the specified value even when the control unit 18 changes the ejection amount QT for a predetermined period or a predetermined number of times, the control unit stops the processing of the substrate W by the processing unit 14.

[0191] <Effect of the Second Embodiment> As described above, the substrate W has a processing film formed thereon, and the fixing pins 33 support the lower surface 26 on which a processing film such as the above-described A film or B film is formed. The specified value is a value determined in advance according to the type of the processing film. Thereby, it is possible to determine whether or not the force N received from the detected substrate W exceeds the rotation specified value or the processing specified value using a value corresponding to the type of the processing film.

[0192] [Third Embodiment] With reference to the drawings, the substrate processing apparatus 1 of the third embodiment will be described. Note that the same components as those in the third embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

[0193] <Operation Example of the Processing Unit 14 in the Third Embodiment> FIG. 13 is a flowchart showing the control of the control unit 18 and the procedure of the operation of the processing unit 14 in the third embodiment. In the operation example of the processing unit 14 in the third embodiment, during the operation of the processing unit 14, when the force N received from the substrate W detected by the tactile sensor 33c via the fixed pin 33b is less than a predetermined value according to the rotation speed of the plate 32, the control unit 18 changes the blowing amount QT so as to be equal to or greater than the predetermined value. In the third embodiment, the blowing amount QT is predetermined according to the rotation speed of the plate 32, and the rotation speed of the plate 32 is predetermined as a reference value.

[0194] Step S31 The control unit 18 refers to the processing recipe and identifies the processing conditions of the processing unit 14. An example of the processing conditions of the processing unit 14 is the rotation speed of the plate 32. Specifically, the control unit 18 identifies the rotation speed to be applied to the rotation driving unit 45 for each processing recipe. The processing recipe is stored in advance in the storage medium constituting the control unit 18.

[0195] Step S32 The control unit 18 determines the blowing amount QT according to the rotation speed. For example, the control unit 18 stores in advance the correspondence between the rotation speed and the blowing amount QT. The control unit 18 determines the blowing amount QT corresponding to the rotation speed specified in Step S31 from this correspondence. The control unit 18 changes the blowing amount QT according to the rotation speed.

[0196] Specifically, the control unit 18 determines the blowing amount QT so that the higher the rotation speed of the plate 32 in the processing recipe, the larger the blowing amount QT.

[0197] For example, when the rotation speed of the plate 32 in the first processing recipe is the first rotation speed, the control unit 18 determines the blowing amount QT to be the first blowing amount Q1c. When the rotation speed of the plate 32 in the second processing recipe is the second rotation speed higher than the first rotation speed, the control unit 18 determines the blowing amount QT to be the second blowing amount Q2c larger than the first blowing amount Q1c.

[0198] Step S33 The control unit 18 determines a specified value according to the rotation speed. For example, the control unit 18 stores in advance the correspondence between the rotation speed and the specified value. The control unit 18 determines the specified value corresponding to the rotation speed specified in step S31 from among this correspondence.

[0199] The control unit 18 may determine the specified value according to the rotation speed as follows. For example, the control unit 18 stores in advance the correspondence between the blowing amount QT and the specified value. The control unit 18 determines the specified value corresponding to the blowing amount QT determined according to the rotation speed in step S32 from among this correspondence. The control unit 18 stores in advance the correspondence between the rotation speed, the blowing amount QT, and the specified value.

[0200] The specified value is, in advance, the value of the force N received from the substrate W detected by the tactile sensor 33c when the gas outlet 34 blows out the gas of the blowing amount QT onto the lower surface 26 of the substrate W rotating at a predetermined rotation speed.

[0201] The specified value of the substrate W rotating at the second rotation speed is set to be larger than the specified value of the substrate W rotating at the first rotation speed.

[0202] For example, when the substrate W rotates at the first rotation speed, the control unit 18 determines the rotation specified value to be the first rotation specified value N1c and the processing specified value to be the first processing specified value N1c + α in response to determining the blowing amount QT to be the first blowing amount Q1c. When the substrate W rotates at the second rotation speed, the control unit 18 determines the rotation specified value to be the second rotation specified value N2c larger than the first rotation specified value N1c and the processing specified value to be the second processing specified value N2c + α larger than the first processing specified value N1c + α in response to determining the blowing amount QT to be the second blowing amount Q2c larger than the first blowing amount Q1c.

[0203] Step S34 The control unit 18 controls the processing unit 14. The control unit 18 controls the blowing adjustment unit 40 based on the determined blowing amount QT. For example, when the rotation speed of the plate 32 in the first processing recipe is the first rotation speed, the blowing amount QT targeted by the blowing adjustment unit 40 is the first blowing amount Q1c corresponding to the first rotation speed. For example, when the rotation speed of the plate 32 in the second processing recipe is the second rotation speed, the blowing amount QT targeted by the blowing adjustment unit 40 is the second blowing amount Q2c corresponding to the second rotation speed.

[0204] Step S35 In accordance with the control by the control unit 18, the processing unit 14 performs processing on the substrate W. Specifically, the blowing adjustment unit 40 supplies gas to the gas blowout port 34 with the determined blowing amount QT of gas. For example, when the rotation speed of the plate 32 in the first processing recipe is the first rotation speed, the gas blowout port 34 blows out gas onto the lower surface 26 of the substrate W with the first blowing amount Q1c corresponding to the first rotation speed. For example, when the rotation speed of the plate 32 in the second processing recipe is the second rotation speed, the gas blowout port 34 blows out gas onto the lower surface 26 of the substrate W with the second blowing amount Q2c corresponding to the second rotation speed.

[0205] In this way, the blowing amount QT is set according to the type of the rotation speed of the plate 32 determined for each processing recipe. Therefore, the suction force set according to the rotation speed of the plate 32 determined for each processing recipe acts on the substrate W supported by the fixed pins 33.

[0206] For example, when the rotation speed of the plate 32 in the first processing recipe is the first rotation speed, the suction force corresponding to the first rotation specified value N1c and the first processing specified value N1c + α corresponding to the first blowing amount Q1c acts on the substrate W supported by the fixed pins 33. For example, when the rotation speed of the plate 32 in the second processing recipe is the second rotation speed, the suction force corresponding to the second rotation specified value N2c and the second processing specified value N2c + α corresponding to the second blowing amount Q2c acts on the substrate W supported by the fixed pins 33.

[0207] However, even if the blowing amount QT is set in advance according to the rotation speed of the plate 32 for each processing recipe as described above, as described in the first embodiment, the suction force corresponding to the required rotation regulation value or processing regulation value may not act on the substrate W. Therefore, similarly to the first embodiment, by detecting the force N received by the tactile sensor 33c from the substrate W via the fixed pin 33b, the control unit 18 detects a decrease in the frictional force between the substrate W and the fixed pin 33, and controls the processing unit 14 such as adjusting the blowing amount QT based on the detection result.

[0208] Step S36 The control unit 18 detects the force N received from the substrate W by the tactile sensor 33c via the fixed pin 33b, similarly to the first embodiment.

[0209] Step S37 The control unit 18 determines whether or not the detected force N received from the substrate W has reached a specified value.

[0210] For example, when the rotation speed of the plate 32 in the first processing recipe is the first rotation speed, the control unit 18 determines whether or not the detected force N received from the substrate W processed in the first processing recipe has reached the first rotation regulation value N1c. The control unit 18 determines whether or not the detected force N received from the substrate W processed in the first processing recipe has reached the first processing regulation value N1c + α. When the rotation speed of the plate 32 in the second processing recipe is the second rotation speed, the control unit 18 determines whether or not the detected force N received from the substrate W processed in the second processing recipe has reached the second rotation regulation value N2c. The control unit 18 determines whether or not the detected force N received from the substrate W processed in the second processing recipe has reached the second processing regulation value N2c + α.

[0211] In this way, the specified values for determining whether or not to perform the process of changing the blowing amount QT are made different depending on whether the rotation speed of the plate 32 is the first rotation speed or the second rotation speed according to the processing recipe. Thereby, when reducing the frictional force between the substrate W and the fixed pin 33, it is possible to determine whether or not to perform the process of changing the blowing amount QT according to the rotation speed of the plate 32 determined according to the processing recipe.

[0212] As a result, when an event occurs that reduces the frictional force between the substrate W and the fixing pins 33, it may be determined that a process of changing the blowing amount QT is to be performed at the first rotation speed in the first processing recipe. However, when the same event occurs, it may be determined that the process of changing the blowing amount QT is not to be performed at the second rotation speed in the second processing recipe. Therefore, even if the same event occurs, in a case where the blowing amount QT does not need to be changed, the process can proceed without changing the blowing amount QT.

[0213] Step S38 Similar to the first embodiment, when the force N received from the detected substrate W does not reach the specified value, the control unit 18 changes the blowing amount QT.

[0214] For example, when the rotation speed of the plate 32 in the first processing recipe is the first rotation speed, if the force N received from the detected substrate W being processed in the first processing recipe does not reach the first rotation specified value N1c or the first processing specified value N1c + α, the control unit 18 changes the blowing amount QT to a blowing amount Q3c that is larger than the current first blowing amount Q1c.

[0215] For example, when the rotation speed of the plate 32 in the second processing recipe is the second rotation speed, if the force N received from the detected substrate W being processed in the second processing recipe does not reach the second rotation specified value N2c or the second processing specified value N2c + α, the control unit 18 changes the blowing amount QT to a blowing amount Q4c that is larger than the current second blowing amount Q2c.

[0216] Step S39 If the force N received from the detected substrate W does not reach the specified value even after the control unit 18 changes the blowing amount QT for a predetermined period or a predetermined number of times, the control unit 18 stops the processing of the substrate W by the processing unit 14.

[0217] <Effect of the Third Embodiment> Thus, the specified value is a value determined in advance according to the rotation speed of the plate 32. Thereby, it is possible to determine whether or not the force N received from the detected substrate W exceeds the rotation specified value or the processing specified value, based on a value corresponding to the rotation speed of the plate.

[0218] [Fourth Embodiment] Referring to the drawings, the substrate processing apparatus 1 of the fourth embodiment will be described. Note that the same components as those in the fourth embodiment are denoted by the same reference numerals, and detailed descriptions thereof are omitted.

[0219] <Operation Example of the Processing Unit 14 of the Fourth Embodiment> FIG. 14 is a flowchart showing the control of the control unit 18 and the operation procedure of the processing unit 14 in the fourth embodiment. In the operation example of the processing unit 14 of the fourth embodiment, the blowout amount QT and the specified value are determined according to the rotation speed reached as the processing time in one processing recipe elapses.

[0220] Step S41 The control unit 18 refers to the processing recipe and specifies the processing conditions of the processing unit 14. An example of the processing conditions of the processing unit 14 is that the processing of the substrate W is divided into a first process and a second process, and the rotation speed and the regulation value are different between the first process and the second process. The first process is a period during which the plate 32 on which the substrate W is placed is rotated at a first rotation speed for processing. The second period is a period during which the plate 32 on which the substrate W is placed is rotated at a second rotation speed for processing. Specifically, the control unit 18 specifies the rotation speed applied to the rotation driving unit 45 as the processing time elapses. The relationship between the elapsed processing time and the rotation speed is stored in advance in the storage medium constituting the control unit 18 as a processing recipe.

[0221] Step S42 The control unit 18 determines the blowout amount QT according to each rotation speed. The relationship between the elapsed processing time, each rotation speed, and the blowout amount QT is stored in advance in the storage medium constituting the control unit 18 as a processing recipe.

[0222] For example, when the rotation speed of the plate 32 in the first period of a certain processing recipe is the first rotation speed, the control unit 18 determines the blowing amount QT to be the first blowing amount Q1d. When the rotation speed of the plate 32 in the second period that comes after the first period in that processing recipe is the second rotation speed which is faster than the first rotation speed, the control unit 18 determines the blowing amount QT to be the second blowing amount Q2d which is larger than the first blowing amount Q1d.

[0223] Step S43 The control unit 18 determines a specified value according to each rotation speed. The relationship between the passage of the processing time, each rotation speed, and the specified value is stored in advance in the storage medium that constitutes the control unit 18 as a processing recipe.

[0224] The control unit 18 may determine the specified value according to each rotation speed as follows. For example, the control unit 18 stores in advance the correspondence relationship between the passage of the processing time, the blowing amount QT, and the specified value. The control unit 18 determines the specified value corresponding to the blowing amount QT determined according to each rotation speed in step S32 from among this correspondence relationship. The control unit 18 stores in advance the correspondence relationship between the passage of the processing time, each rotation speed, the blowing amount QT, and the specified value.

[0225] The specified value is, in advance, the value of the force N received from the substrate W detected by the tactile sensor 33c when the gas outlet 34 blows out the gas of the blowing amount QT onto the lower surface 26 of the substrate W rotating at the rotation speed that the gas reaches as the processing time elapses.

[0226] The specified value of the substrate W rotating at the second rotation speed in the second period is set to be larger than the specified value of the substrate W rotating at the first rotation speed in the first period.

[0227] For example, when the substrate W rotates at the first rotation speed in the first period, in response to determining that the blowing amount QT is the first blowing amount Q1d, the control unit 18 determines the rotation specified value as the first rotation specified value N1d and determines the processing specified value as the first processing specified value N1d + α. When the substrate W rotates at the second rotation speed in the second period, in response to determining that the blowing amount QT is the second blowing amount Q2d which is larger than the first blowing amount Q1d, the control unit 18 determines the rotation specified value as the second rotation specified value N2d which is larger than the first rotation specified value N1d and determines the processing specified value as the second processing specified value N1d + α which is larger than the first processing specified value N1d + α.

[0228] Step S44 The control unit 18 controls the processing unit 14. As time of processing elapses, the control unit 18 controls the blowing adjustment unit 40 based on the determined blowing amount QT. For example, when the rotation speed of the plate 32 in the first period is the first rotation speed, the blowing amount QT targeted by the blowing adjustment unit 40 in the first period is the first blowing amount Q1d corresponding to the first rotation speed. For example, when the rotation speed of the plate 32 in the second period is the second rotation speed, the blowing amount QT targeted by the blowing adjustment unit 40 in the second period is the second blowing amount Q2d corresponding to the second rotation speed.

[0229] Step S45 In accordance with the control by the control unit 18, the processing unit 14 performs processing on the substrate W. The processing on the substrate W will be described specifically for the processing liquid supply process in the fourth embodiment. The processing before supplying the processing liquid is as described in the third embodiment. Specifically, the ejection adjustment unit 40 supplies gas to the gas ejection port 34 with the determined ejection amount QT of gas. For example, when the rotation speed of the plate 32 in the first period is the first rotation speed, from the start of the processing on the substrate W before the processing liquid supply period until the end of the first period during the processing liquid supply period, the gas ejection port 34 ejects gas onto the lower surface 26 of the substrate W with the first ejection amount Q1d corresponding to the first rotation speed. For example, when the rotation speed of the plate 32 in the second period is the second rotation speed, when reaching the second period during the processing liquid supply period, the gas ejection port 34 ejects gas onto the lower surface 26 of the substrate W with the second ejection amount Q2d corresponding to the second rotation speed.

[0230] In this way, the ejection amount QT is set according to the type of the rotation speed of the plate 32 reached as the processing time elapses in the processing liquid supply process. Therefore, the suction force set according to the rotation speed of the plate 32 determined for each of the first period and the second period in the processing time acts on the substrate W supported by the fixed pins 33.

[0231] For example, when the rotation speed of the plate 32 in the first period is the first rotation speed, the suction force corresponding to the first rotation specified value N1d and the first processing specified value N1d + α corresponding to the first ejection amount Q1d acts on the substrate W supported by the fixed pins 33. For example, when the rotation speed of the plate 32 in the second period is the second rotation speed, the suction force corresponding to the second rotation specified value N2d and the second processing specified value N2d + α corresponding to the second ejection amount N2d acts on the substrate W supported by the fixed pins 33.

[0232] However, even if the blowing amount QT is set in advance according to the rotation speed of the plate 32 reached as the processing time in the processing recipe of 1 elapses, as described in the first embodiment, the suction force corresponding to the required rotation regulation value and processing regulation value may not act on the substrate W. Therefore, similarly to the first embodiment, by detecting the force N received by the tactile sensor 33c from the substrate W via the fixed pin 33b, the control unit 18 detects a decrease in the frictional force between the substrate W and the fixed pin 33, and controls the processing unit 14 such as adjusting the blowing amount QT based on the detection result.

[0233] Step S46 The control unit 18 detects the force N received from the substrate W by the tactile sensor 33c via the fixed pin 33b, similarly to the first embodiment.

[0234] Step S47 The control unit 18 determines the rotation speed of the plate 32 reached as the processing time elapses. Specifically, if the timing for determination in this step S47 is during the first processing liquid supply period from the start of the processing of the substrate W, the rotation speed of the plate 32 to be reached is determined to be the first rotation speed, and the process proceeds to step S48. If the timing for determination in this step 47 is during the second processing liquid supply period, the rotation speed of the plate 32 to be reached is determined to be the second rotation speed, and the process proceeds to step S49.

[0235] Step S48 When the rotation speed of the plate 32 reached as the processing time elapses is the first rotation speed, the control unit 18 determines whether or not the detected force N received from the substrate W has reached the specified value corresponding to the first rotation speed. Specifically, from the start of the first processing of the substrate W to the start of the processing liquid supply period, the control unit 18 determines whether or not the detected force N received from the substrate W has reached the first rotation specified value N1d. During the first processing liquid supply period, the control unit 18 determines whether or not the detected force N received from the substrate W has reached the first processing specified value N1d + α.

[0236] Step S49 When the rotational speed of the plate 32 reached as the processing time elapses is the second rotational speed, the control unit 18 determines whether or not the force N received from the detected substrate W has reached a specified value corresponding to the second rotational speed. Specifically, from the start of the second process on the substrate W to the start of the second processing liquid supply period, the control unit 18 determines whether or not the force N received from the detected substrate W has reached the second rotation specified value N2d. During the second processing liquid supply period, the control unit 18 determines whether or not the force N received from the detected substrate W has reached the second process specified value N2d + α.

[0237] In this way, depending on whether the rotational speed of the plate 32 reached as the processing time elapses is the first rotational speed or the second rotational speed, a specified value for determining whether or not to perform the process of changing the ejection amount QT is made different. Thereby, when reducing the frictional force between the substrate W and the fixing pin 33, it is possible to determine whether or not to perform the process of changing the ejection amount QT according to the rotational speed of the plate 32 reached as the processing time elapses.

[0238] As a result, when an event occurs that reduces the frictional force between the substrate W and the fixing pin 33, when the rotational speed of the plate 32 reached as the processing time elapses is the first rotational speed, it may be determined that the process of changing the ejection amount QT is to be performed. However, when the same event occurs, when the rotational speed of the plate 32 reached as the processing time elapses is the second rotational speed, it may be determined that the process of changing the ejection amount QT is not to be performed. Therefore, even if the same event occurs, in a case where it is not necessary to change the ejection amount QT, the processing can proceed without changing the ejection amount QT.

[0239] Step S50 Similar to the first embodiment, when the force N received from the detected substrate W has not reached the specified value, the control unit 18 changes the ejection amount QT.

[0240] For example, when the rotational speed of the plate 32 reached as the processing time elapses is the first rotational speed, if the force N received from the detected substrate W has not reached the first rotation specified value N1d or the first processing specified value N1d + α, the control unit 18 changes the blowing amount QT to a blowing amount Q3d larger than the current first blowing amount Q1d.

[0241] For example, when the rotational speed of the plate 32 reached as the processing time elapses is the second rotational speed, if the force N received from the detected substrate W has not reached the second rotation specified value N2d or the second processing specified value N2d + α, the control unit 18 changes the blowing amount QT to a blowing amount Q4d larger than the current second blowing amount Q2d.

[0242] Step S51 If the control unit 18 changes the blowing amount QT for a predetermined period or a predetermined number of times and the force N received from the detected substrate W does not reach the specified value, the control unit 18 stops the processing of the substrate W by the processing unit 14.

[0243] <Graph (4) showing the relationship between the force N received from the substrate in the fourth embodiment and the elapsed time> With reference to FIG. 15, the relationship between the force N received from the substrate in the fourth embodiment and the elapsed time will be described. Also, the relationship between the adjusted blowing amount and the elapsed time will be described.

[0244] FIG. 15(a) is a graph showing the relationship between the force N received from the substrate in the fourth embodiment and the elapsed time, and (b) is a graph showing the relationship between the adjusted blowing amount QT in the fourth embodiment and the elapsed time. The substrate W to be processed is a normal substrate WN. The timings shown in graph (4) are common to the graphs of (a) and (b).

[0245] The timings T1, T2, T3, and T4 are the same as the graphs (1) and (2) described with reference to FIGS. 9 and 10 in the first embodiment.

[0246] After timing T4, the processing liquid supply process is started. The processing liquid supply period from timing T4 to timing T6 is divided into a period in which the first processing liquid supply process is performed and a period in which the second processing liquid supply process is performed. The first processing liquid supply process is a process of supplying the first processing liquid while rotating the plate 32 at the first rotation speed. The second processing liquid supply process is a process of supplying the second processing liquid while rotating the plate 32 at a second rotation speed higher than the first rotation speed. Note that the first processing liquid supply process from the gas supply process for rotating the substrate W at the first rotation speed corresponds to the "first processing" of the present invention. The second processing liquid supply process from the gas supply process for rotating the substrate W at the second rotation speed corresponds to the "second processing" of the present invention.

[0247] From timing T4 to timing T5a, the plate 32 is rotated at the first rotation speed, nitrogen gas is supplied at the first blowing amount Q1d, and the first processing liquid is being supplied. At timing T5a, the control unit 18 starts a process of rotating at the second rotation speed and supplying nitrogen gas for performing the second processing liquid supply process at the second blowing amount Q2d. At timing T5b, the force N received from the detected normal substrate WN reaches the second rotation specified value N2d, and a process of increasing the rotation speed of the plate 32 from the first rotation speed to the second rotation speed is started. At timing T5c, the blowing amount QT reaches the second blowing amount Q2d, and the force N received from the detected normal substrate WN reaches the second processing specified value N2d + α. Also, at timing T5c, the rotation speed of the plate 32 reaches the second rotation speed. After timing T5c, the force N received from the detected normal substrate WN is supposed to be maintained at the second processing specified value N2d + α that is originally required for the second processing liquid supply process.

[0248] However, as described above, depending on the type of processing liquid supplied to the substrate W, for example, when the second rotation speed is reached, the frictional force generated between the fixed pin 33 and the substrate W may decrease. In such a case, the force N received from the normal substrate WN detected from timing T5d to timing T5e is lower than the second processing specified value N2d + α and has decreased to a force X2 that is equal to or greater than the second rotation specified value N2d. Therefore, in the period X from timing T5e to timing T5f, the control unit 18 determines whether the force X2 is a false detection by determining whether the detected force N received from the normal substrate WN returns to the second processing specified value N2d + α while maintaining the second ejection amount Q2d.

[0249] During the period X, if the detected force N received from the normal substrate WN returns to the second processing specified value N2d + α, it is determined that the force X2 is a false detection, and the control unit 18 continues to supply the second processing liquid to the normal substrate WN as it is. During the period X, if the detected force N received from the normal substrate WN does not return to the second processing specified value N2d + α while maintaining the second ejection amount Q2d, at timing T5f, the control unit 18 changes the ejection amount QT from the second ejection amount Q2d to the fourth ejection amount Q4d. The control unit 18 determines whether the detected force N received from the normal substrate WN returns to the second processing specified value N2d + α as the ejection amount QT increases from the second ejection amount Q2d to the fourth ejection amount Q4d.

[0250] At timing T5g, the detected force N received from the normal substrate WN returns to the second processing specified value N2d + α. Thereafter, at timing T5h, the ejection amount QT reaches the fourth ejection amount Q4d. In the graph shown in (4), the force N received from the normal substrate WN corresponding to the fourth ejection amount Q4d should be greater than the second processing specified value N2d + α, but it converges to the second processing specified value N2d + α by feedback control. This point is the same as the graph (2) of the first embodiment.

[0251] When the detected force N received from the normal substrate WN returns to the second processing specified value N2d + α, the control unit 18 continues the second processing liquid supply process.

[0252] From timing T6 to timing T7, similar to graphs (1) and (2), it is a process of ending the substrate processing on the normal substrate WN.

[0253] During period Z from timing T5h to timing T5z, the control unit 18 determines whether the force N received from the detected normal substrate WN returns to the second processing specified value N2d + α while maintaining the fourth blowing amount Q4d. If the force N received from the normal substrate WN detected during period Z returns to the second processing specified value N2d + α, the second processing liquid supply process is continued as described above. If the force N received from the normal substrate WN detected during period Z does not return to the second processing specified value N2d + α, the control unit 18 stops the rotation of the plate 32 at the end of period Z. After stopping the rotation of the plate 32, the control unit 18 stops the supply of nitrogen gas. Thereby, it is possible to prevent the second processing liquid supply process from continuing in a state where the frictional force between the substrate W and the fixing pin 33 is reduced, that is, in a state where the suction force required for supplying the second processing liquid to the substrate W is not applied.

[0254] <Effects of the Fourth Embodiment> Thus, for example, when the rotation speed of the plate 32 changes during the supply of the processing liquid in the processing unit 14, the processing specified value changes according to the change in the rotation speed of the plate 32. Thereby, it is possible to determine whether the force N received from the detected substrate W exceeds the processing specified value based on a value corresponding to the change in the rotation speed of the plate 32.

[0255] The processing for the substrate W includes at least a first processing liquid supply process and a second processing liquid supply process following the first processing liquid supply process, and the processing specified value is a predetermined rotation specified value and processing specified value required for the second processing liquid supply process when the processing for the substrate W changes from the first processing liquid supply process to the second processing liquid supply process. Thereby, when the force N received from the detected substrate W is below the rotation specified value and processing specified value required for the second processing liquid supply process when the processing for the substrate W changes from the first processing liquid supply process to the second processing liquid supply process, the force N received from the substrate can be made into the force (rotation specified value and processing specified value) required for the processing.

[0256] The specified value is a predetermined processing specified value for continuing the second processing liquid supply process, for example, while the processing unit 14 is executing the second processing liquid supply process for the substrate W. Thereby, when the force N received from the detected substrate W falls below the processing specified value necessary for continuing the second processing liquid supply process while the processing unit 14 is executing the second processing liquid supply process, the force N received from the substrate can be made the force necessary for continuing the second processing liquid supply process (the force corresponding to the second processing liquid supply process).

[0257] [Fifth Embodiment] Referring to FIG. 16, the substrate processing apparatus 1 of the fifth embodiment will be described. FIG. 16 is a flowchart showing the control of the control unit 18 and the operation procedure of the processing unit 14 in the fifth embodiment.

[0258] In the operation example of the processing unit 14 of the sixth embodiment, the control unit 18 determines the blowing amount QT and the specified value according to the type of the processing unit 14. The flowchart shown from step 31A to step 39A is basically the same as the flowchart shown from step 31 to step 39 described with reference to FIG. 13 in the third embodiment. Hereinafter, the description will focus on the differences.

[0259] The control unit 18 adopts the type of the processing unit 14 as a processing condition used for processing the substrate W. The control unit 18 acquires the type of the processing unit 14 used for processing the substrate W from, for example, the barcode of the carrier C and the information regarding the processing recipe of the substrate W stored in the storage medium of the control unit 18.

[0260] The frictional force between the substrate W and the fixing pin 33 may vary depending on the type of the processing unit 14 supplied from the processing liquid supply unit 51. The type of the processing unit 14 varies depending on processing conditions such as the rotation speed of the plate 32, the type of the processing liquid, and the flow rate of the processing liquid. When the type of the processing unit 14 changes from the reference type of the processing unit 14, the suction force required for performing the processing in the processing unit 14 changes from the suction force in the reference processing liquid.

[0261] Even when there are multiple types of processing liquids, by setting the blowing amount QT in advance according to the type of the processing unit 14, normally, a sufficient suction force can act on the substrate W according to the type of the processing unit 14. However, as described in the first embodiment, there may be a case where a sufficient suction force does not act on the substrate W. Therefore, similar to the first embodiment, by detecting the force N received by the tactile sensor 33c from the substrate W via the fixed pin 33b, the control unit 18 detects a decrease in the frictional force between the substrate W and the fixed pin 33, and controls the processing unit 14 such as adjusting the blowing amount QT based on the detection result.

[0262] Thereby, it is possible to vary the specified value for determining whether or not to perform the process of changing the blowing amount QT according to the type of the processing unit 14. That is, when the frictional force between the substrate W and the fixed pin 33 is reduced, it is possible to determine whether or not to perform the process of changing the blowing amount QT according to the type of the processing liquid.

[0263] As a result, when an event occurs that reduces the frictional force between the substrate W and the fixed pin 33, in some types of processing units 14, it may be determined that the process of changing the blowing amount QT is to be performed. However, when the same event occurs, in other types of processing units 14, it may be determined that the process of changing the blowing amount QT is not to be performed. Therefore, even when the same event occurs, for a processing liquid for which it is not necessary to change the blowing amount QT, the process can proceed without changing the blowing amount QT.

[0264] <Effect of the Fifth Embodiment> The specified value is a value determined in advance according to the type of the processing unit 14. Thereby, it is possible to make the determination as to whether or not the detected force received from the substrate W exceeds the specified value at a height corresponding to the type of the processing unit 14.

[0265] [Sixth Embodiment] Referring to FIG. 17, the substrate processing apparatus 1 of the sixth embodiment will be described. FIG. 17 is a flowchart showing the control of the control unit 18 and the procedure of the operation of the processing unit 14 in the sixth embodiment.

[0266] In the operation example of the processing unit 14 in the sixth embodiment, the control unit 18 determines the blowing amount QT and the specified value according to the type of the processing liquid. The flowchart shown from step 31B to step 39B is basically the same as the flowchart shown from step 31 to step 39 described with reference to FIG. 13 in the third embodiment. Hereinafter, the description will focus on the differences.

[0267] In the operation example of the processing unit 14 in the sixth embodiment, the control unit 18 acquires the type of the processing liquid used for processing the substrate W from, for example, the bar code of the carrier C and the information regarding the processing recipe of the substrate W stored in the storage medium of the control unit 18.

[0268] The frictional force between the substrate W and the fixing pin 33 may vary depending on the type of the processing liquid from the processing liquid supply unit 51. The type of the processing liquid is, for example, pure and non-pure processing liquid. The non-pure processing liquid is, for example, a processing liquid with a lower frictional force between the substrate W and the fixing pin 33 than when pure is supplied. When the processing liquid changes from the reference processing liquid, the suction force required for performing the processing in the processing unit 14 changes from the suction force in the reference processing liquid.

[0269] When there are a plurality of types of processing liquids that can be used in the processing of the substrate W, by setting the blowing amount QT in advance according to the type of the processing liquid, normally, the suction force required according to the type of the processing liquid can be applied to the substrate W. However, as described in the first embodiment, there may be a case where the required suction force does not act on the substrate W. Therefore, similar to the first embodiment, by detecting the force N received by the tactile sensor 33c from the substrate W via the fixing pin 33b, the control unit 18 detects a decrease in the frictional force between the substrate W and the fixing pin 33, and controls the processing unit 14 such as adjusting the blowing amount QT based on the detection result.

[0270] Accordingly, it is possible to vary the specified value for determining whether to perform the process of changing the blowing amount QT according to the type of the processing liquid. That is, when reducing the frictional force between the substrate W and the fixing pin 33, it is possible to determine whether to perform the process of changing the blowing amount QT according to the type of the processing liquid.

[0271] As a result, when an event occurs that reduces the frictional force between the substrate W and the fixing pin 33, in some cases of a certain type of processing liquid, it may be determined that the process of changing the blowing amount QT is to be performed. However, when the same event occurs, in some cases of another type of processing liquid, it may be determined that the process of changing the blowing amount QT is not to be performed. Therefore, even when the same event occurs, if it is not necessary to change the blowing amount QT according to another type of processing liquid, the process can proceed without changing the blowing amount QT.

[0272] <Effects of the Sixth Embodiment> A processing liquid supply unit 51 that supplies a processing liquid to the substrate W supported by the fixing pin 33b is provided, and the specified value is a value determined in advance according to the type of the processing liquid. Accordingly, it is possible to make a determination as to whether the detected force received from the substrate W exceeds the specified value at a height according to the type of the processing liquid or the flow rate of the processing liquid.

[0273] The present invention is not limited to the first to sixth embodiments, and can be modified as follows.

[0274] (1) In the above-described first embodiment, the specified value of the substrate W was determined according to the shape of the substrate W. In the above-described second embodiment, the specified value was determined according to the type of the film formed on the substrate W. In the above-described third and fourth embodiments, the specified value of the substrate W was determined according to, for example, the rotation speed of the plate 32 as a processing condition of the substrate. In the above-described fifth and sixth embodiments, the specified value of the substrate W was determined according to the type of the processing unit 14 and the type of the processing liquid. However, the present invention is not limited to these embodiments. For example, the control unit 18 may determine the specified value according to at least one condition among the shape of the substrate W, the type of the film formed on the substrate W, the rotation speed of the plate 32, the type of the processing unit 14, and the type of the processing liquid.

[0275] Also, for example, the control unit 18 may set a specified value in advance in a certain processing unit 14 for the shape of the substrate W, the type of film, the rotation speed of the plate 32, the type of processing liquid, or the flow rate of the processing liquid. When the substrate W is processed at a shape of the substrate W, a type of film, a rotation speed of the plate 32, a type of processing liquid, or a flow rate of the processing liquid different from this specified value, the control unit 18 may adjust the specified value based on the force N received from the detected substrate W.

[0276] (2) In the first embodiment, the shape of the substrate W is detected by at least one of the barcode reader 4 or the shape detection units 13 and 63. In the second embodiment, the type of film formed on the substrate W is detected by the barcode reader 4. In the third and fourth embodiments, for example, the rotation speed of the plate 32 as a processing condition of the substrate is acquired from a processing recipe stored in the storage medium of the control unit 18. In the fifth and sixth embodiments described above, the types of the processing units 14 and the types of the processing liquid are acquired from a processing recipe stored in the storage medium of the control unit 18. However, the present invention is not limited to these embodiments. For example, the control unit 18 may acquire information for determining these specified values from information input by the operator via the input unit 17.

[0277] (3) In the above-described first to sixth embodiments, when the force N received from the detected substrate W does not reach the specified value, it is finally determined whether it reaches the specified value through feedback control. However, the present invention is not limited to these embodiments. For example, when the force N received from the detected substrate W significantly decreases, the control unit 18 may finally determine that it does not reach the specified value without going through feedback control. The case where it is finally determined that the specified value is not reached is the case where the substrate W is not normally supported by the fixing pins 33. Specifically, for example, when the substrate W cracks during processing and is not normally supported by the fixing pins 33. The substrate W is not cracked, but the case where the substrate W comes off from the fixing pins 33. The case where the detected force N received from the substrate W significantly decreases is, for example, the case where the control unit 18 determines that the detected force N received from the substrate W is 0 or a value close to 0. The above two cases correspond to this.

[0278] With such a configuration, the control unit 18 can determine whether the substrate W is normally placed on the fixing pins 33 based on the force N received from the detected substrate W.

[0279] (4) In the sixth embodiment, the control unit 18 determined the specified value according to the type of the processing liquid. However, it is not limited to this. The control unit 18 may determine the specified value according to the flow rate of the processing liquid. When the supply of the processing liquid to the upper surface 27 of the substrate W ends, the air flow of the gas supplied between the lower surface 26 of the substrate W and the upper surface 32a of the plate 32 may change. When the air flow changes, the suction force acting on the substrate W may change. When the air flow changes, the frictional force between the fixing pins 33 and the substrate W may decrease. The present invention is effective in such a case.

[0280] (5) Instead of the control unit determining that the force N received from the detected substrate W is 0 or a value close to 0, a sensor may be provided to detect that an event has occurred in which the force N received from the detected substrate W becomes 0 or a value close to 0. This will be described with reference to FIG. 18. FIG. 18 is a top view of the plate 32 according to the modified example.

[0281] For example, a proximity sensor 65 capable of detecting the presence or absence of the substrate W is provided on the upper surface 32a of the plate 32. The proximity sensor 65 is composed of an infrared light-emitting element such as an infrared light-emitting diode and a light-receiving element such as a photodiode. The infrared light-emitting element emits infrared light toward the lower surface 26 of the substrate W placed on the fixed pin 33. The light-receiving element receives the infrared light reflected from the lower surface 26 of the substrate W placed on the fixed pin 33. When there is a detection signal from the light-receiving element, the control unit 18 determines that the substrate W is normally placed on the fixed pin 33. When there is no detection signal from the light-receiving element, the control unit 18 determines that the substrate W is not normally placed on the fixed pin 33.

[0282] For example, the proximity sensor 65c is provided at the center of the upper surface 32a of the plate 32. As a result, when the substrate W is cracked in half at the center, the proximity sensor 65c is exposed from the gap of the cracked substrate W. Thus, when the substrate W is completely damaged, it can be detected quickly without going through feedback control.

[0283] For example, the proximity sensors 65r, 65l, 65u, and 65d are provided on the right side, left side, upper side, and lower side of the upper surface 32a of the plate 32. The proximity sensors 65r, 65l, 65u, and 65d are provided near the gas outlet 34 and on the side close to the rotation axis A. For example, the substrate W comes off the fixed pin 33 and moves horizontally toward the left side of the rotation axis A. At this time, the proximity sensor 65r is exposed. That is, the proximity sensor 65r detects the horizontal movement of the substrate W in the left direction. In this way, the proximity sensors 65r, 65l, 65u, and 65d detect that the substrate W has come off the fixed pin 33 and has moved horizontally in any of the up, down, left, or right directions of the rotation axis A.

[0284] As a result, when the substrate W comes off the fixing pin 33 and the force N received from the detected substrate W becomes 0 or a value close to 0, it is possible to perform processing such as quickly stopping the rotation of the plate 32. Note that the plate 32 is provided with both the proximity sensor 65c and the proximity sensors 65r, 65l, 65u, 65d, but it may be configured to include only one of them.

[0285] Even though the control unit 18 adjusts the flow rate of the gas blown out from the gas outlet 14 to be equal to or greater than a specified value, when the force received from the substrate W is less than the specified value, the control unit 18 stops the rotational drive of the rotational drive unit 45. Here, even though the flow rate of the gas blown out from the gas outlet 14 is adjusted to be equal to or greater than the specified value, the reason why the force received from the substrate W is less than the specified value may be that the substrate W is not supported by the fixing pin 33 or that the substrate supported by the fixing pin 33 is damaged. By stopping the rotational drive of the rotational drive unit 45 in such a case, it is possible to reduce wasted processing time.

[0286] (6) In the first embodiment described above, an example of the support part in the present invention was the fixing pin 33. However, the support part in the present invention is not limited to this. The support part may be a support part having a shape different from that of the fixing pin 33. For example, the support part may include a part that abuts on the peripheral edge part 23 of the substrate W. Unless the support part completely grips the peripheral edge part 23 of the substrate W, there is a possibility that the substrate W may come off the support part due to a decrease in the frictional force between the support part and the substrate W. By applying the present invention, it becomes easier to prevent the substrate W from completely coming off the support part.

[0287] (7) In the above-described first embodiment, an example of the detection unit in the present invention was the tactile sensor 33c. However, the detection unit in the present invention is not limited to this. The detection unit may be a detection unit different from the tactile sensor 33c. The detection unit may be a weight sensor that detects the weight of the substrate W when the substrate W is placed on the fixing pins 33b. The detection unit may be a pressure sensor that detects the pressure from the substrate W when the substrate W is placed on the fixing pins 33b. The weight sensor and the pressure sensor detect the force N received from the substrate W.

[0288] (8) In the above-described first embodiment, the tactile sensor 33c, which is an example of the detection unit in the present invention, was configured to be attached for each fixing pin 33b. However, the method of attaching the detection unit in the present invention is not limited to this. The tactile sensor 33 may be configured to be attached collectively to a plurality of fixing pins 33b. For example, inside the plate 32, a connecting component that connects the base ends of the plurality of fixing pins 33b is provided. The tactile sensor 33c is attached to the connecting component. The present invention can also be realized with such a configuration.

[0289] (9) In the above-described first to sixth embodiments, after the substrate W was placed on the fixing pins 33, the control unit 18 has always performed feedback control until the processing of the substrate W is completed. However, it is not limited to this. For example, the control unit 18 may perform feedback control only during the period until the rotation speed of the plate 32 reaches the rotation speed required for the processing of the substrate W. Alternatively, the control unit 18 may perform feedback control only during the period after the rotation speed of the plate 32 reaches the rotation speed required for the processing of the substrate W.

[0290] (10) In the above-described first embodiment, the shape of the substrate W for determining the specified value was configured to be determined by the thickness of the main portion 22 and the peripheral portion 23 of the substrate W as to whether it is a normal substrate WN or a special substrate WS. However, it may also be configured to be determined based on the contour of the substrate W acquired by the two-dimensional image sensor. For example, it may be an umbrella-shaped substrate having a curved portion protruding upward or a bowl-shaped substrate having a curved portion protruding downward. Not only the special substrate WS as in the first embodiment, but also the umbrella-shaped substrate and the bowl-shaped substrate have a blow-out amount QT corresponding to their respective shapes and a specified value corresponding thereto determined.

[0291] Regarding the above-described embodiments and each modified embodiment, each configuration may be appropriately changed by replacing or combining each configuration with the configuration of another modified embodiment.

Explanation of Reference Numerals

[0292] 1 … Substrate processing apparatus 2 … Indexer unit 3 … Carrier mounting portion 4 … Barcode reader 5 … Conveying mechanism 11 … Processing block 12 … Mounting portion 13 … Shape detection portion 14 … Processing unit 15 … Conveying mechanism 17 … Input portion 18 … Control unit 21 … Substrate body 22 … Peripheral portion 23 … Main portion 26 … Lower surface 27 … Upper surface 31 … Substrate holding portion 32 … Plate 32a … Upper surface 33 … Fixed pin (support portion) 33a … Fixed pin 33b … Fixed pin 33c … Tactile sensor 33c1 … Base material portion 33c2... Sensor chip 33c3... Cover part 33c4... Elastic member 34... Gas outlet 38... Gas supply path 40... Blowing adjustment part 45... Rotation drive part 51... Processing liquid supply part 52... Nozzle 57... Flow rate adjustment part 61... Guard 63... Shape detection part A... Axis of rotation C... Carrier QT... Blowing amount (flow rate of gas blown out from gas outlet) RS... Rotation speed of plate TN1... Thickness of main part of normal substrate TN2... Thickness of side edge part of normal substrate TS1... Thickness of main part of special substrate TS2... Thickness of side edge part of special substrate W... Substrate WN... Normal substrate WS... Special substrate

Claims

1. A substrate processing apparatus, comprising: a processing unit for processing a substrate; a control unit for controlling the processing unit; wherein the processing unit includes: a plate having an upper surface; a rotational drive unit for rotating the plate; a support unit that protrudes upward from the upper surface of the plate and contacts at least one of the lower surface and the edge of the substrate, and supports the substrate at a position higher than the upper surface of the plate; a gas outlet formed on the upper surface of the plate for blowing gas upward; a blowing adjustment unit for adjusting the flow rate of the gas blown out from the gas outlet; a detection unit for detecting a force received from the substrate when a suction force according to Bernoulli's principle acts on the substrate supported by the support unit; the control unit controls the processing unit based on information on the force received from the substrate detected by the detection unit A substrate processing apparatus characterized by the above.

2. In the substrate processing apparatus according to Claim 1, the detection unit detects, as the force received from the substrate, a pressing force with which the substrate presses against the support unit when the suction force acts on the substrate supported by the support unit; the control unit controls the processing unit based on information on the pressing force detected by the detection unit A substrate processing apparatus characterized by the above.

3. In the substrate processing apparatus according to Claim 2, the detection unit is attached to the support unit A substrate processing apparatus characterized by the above.

4. In the substrate processing apparatus according to Claim 1, the detection unit detects, as the force received from the substrate, a pressing force with which the support unit presses against the plate when the suction force acts on the substrate supported by the support unit; the control unit controls the processing unit based on information on the pressing force detected by the detection unit A substrate processing apparatus characterized by the above.

5. In the substrate processing apparatus according to Claim 4, the detection unit is attached to the plate A substrate processing apparatus characterized by the above.

6. In the substrate processing apparatus according to Claim 1, the control unit changes the flow rate of the gas blown out from the gas outlet based on information on the force received from the substrate A substrate processing apparatus characterized by the above.

7. In the substrate processing apparatus according to Claim 1, when the force received from the substrate is less than a specified value, the control unit adjusts the flow rate of the gas blown out from the gas outlet so that the force received from the substrate becomes equal to or greater than the specified value A substrate processing apparatus characterized by the above.

8. In the substrate processing apparatus according to Claim 7, the specified value is a predetermined value for the processing unit to start processing on the substrate A substrate processing apparatus characterized by the above.

9. In the substrate processing apparatus according to Claim 7, the specified value is a predetermined value required for processing the substrate during the processing of the substrate by the processing unit A substrate processing apparatus characterized by the above.

10. In the substrate processing apparatus according to Claim 9, the processing of the substrate includes at least a first process and a second process following the first process, the specified value is a predetermined value required for the second process when the processing of the substrate changes from the first process to the second process A substrate processing apparatus characterized by the above.

11. In the substrate processing apparatus according to Claim 7, the specified value is a predetermined value for each type of the shape of the substrate A substrate processing apparatus characterized by the above.

12. In the substrate processing apparatus according to Claim 7, the specified value is a predetermined value according to the rotation speed of the plate A substrate processing apparatus characterized by the above.

13. In the substrate processing apparatus according to Claim 12, when the rotation speed of the plate changes during the processing in the processing unit, the specified value changes according to the change in the rotation speed of the plate A substrate processing apparatus characterized by the above.

14. In the substrate processing apparatus according to Claim 7, a processing film is formed on the substrate, the support portion supports the surface on which the processing film is formed, the specified value is a predetermined value according to the type of the processing film A substrate processing apparatus characterized by the above.

15. In the substrate processing apparatus according to Claim 7, a supply unit for supplying a processing liquid to the substrate supported by the support portion is provided, the specified value is a predetermined value according to the type of the processing liquid or the flow rate of the processing liquid A substrate processing apparatus characterized by the above.

16. In the substrate processing apparatus according to Claim 15, when the type of the processing liquid or the flow rate of the processing liquid changes during the processing in the processing unit, the specified value changes according to the change in the type of the processing liquid or the flow rate of the processing liquid A substrate processing apparatus characterized by the above.

17. In the substrate processing apparatus according to Claim 7, the specified value is a predetermined value according to the type of the processing unit A substrate processing apparatus characterized by the above.

18. In the substrate processing apparatus according to Claim 7, even if the control unit adjusts the flow rate of the gas blown out from the gas outlet to be equal to or greater than the specified value, when the force received from the substrate is less than the specified value, the control unit stops the rotation of the rotation drive unit A substrate processing apparatus characterized by the above.

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