The invention discloses a method for adjusting and controlling the growth uniformity of a
tin oxide film, which comprises the following steps of: placing a polished
silicon wafer in a carrier boat for bearing the
silicon wafer, and arranging a flow uniformizing device below the carrier boat; and after the cavity reaches a
vacuum state and the temperature reaches 80-120 DEG C, sequentially introducing a
tin source, introducing large-flow
argon for primary purging, introducing small-flow
argon for secondary purging, introducing an
oxygen source, introducing large-flow
argon for
tertiary purging and introducing small-flow argon for
quaternary purging, and repeating for 50-200 times. According to the scheme, through the Bernoulli principle, the pressure intensity of places with small flow velocity in fluid is large, the pressure intensity of places with large flow velocity is small, the movable baffle with the opening degree controlled through the pressure intensity is manufactured at the air exhaust position,
airflow is redistributed, and the air uniformity is improved. And through a large and small flow superposition purging mode, it is guaranteed that
gas pressure difference is not generated in the source introduction step to affect
airflow flowing, the purging capacity is enhanced, and the film thickness uniformity is improved.