Adsorption device, deposition device, adsorption method, deposition method, and manufacturing method of electronic device

Abstract

To preferably absorb an absorbed body to an electrostatic chuck.SOLUTION: An adsorption device includes: a support unit for supporting a peripheral edge part of a first main surface of an absorbed body having the first main surface and a second main surface on the side opposite to the first main surface; absorbing means of absorbing the absorbed body from the second main surface of the absorbed body; and a plurality of pressing members that are provided to the absorbing means, and is for pressing the absorbed body from the second main surface side of the absorbed body. The plurality of pressing members are positioned to at least two corner parts of a plurality of corner parts provided to the second main surface of the absorbed body.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present invention relates to a suction device, a film forming device, a suction method, a film forming method, and a method for manufacturing an electronic device.

Background Art

[0002] Patent Document 1 discloses a film forming apparatus having a pressing member installed on an upper side wall of a vacuum chamber and fixed so as to extend downward. In this apparatus configuration, as the substrate supported by the substrate support unit rises, the upper surface of the substrate comes into contact with the pressing member, and the substrate is pressed downward.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, due to the distortion of the vacuum chamber caused by vacuum formation, inclination may occur in an electrostatic chuck or the like. Even if the protruding amount of the pressing member is adjusted in the atmosphere, when distortion occurs in the vacuum chamber due to vacuum formation, the protruding amount of the pressing member installed on the upper side wall of the vacuum chamber may vary. Therefore, when applying the result of adjusting the inclination of the substrate posture in the atmosphere to the inclination adjustment in the vacuum environment, due to the influence of the inclination caused by vacuum formation, the protruding amount of the pressing member may become unbalanced and may cause poor adhesion.

[0005] An object of the present invention is to provide a technique capable of satisfactorily adsorbing an object to be adsorbed to an electrostatic chuck without being affected by the distortion of a vacuum chamber caused by vacuum formation.

Means for Solving the Problems

[0006] An adsorption device according to one aspect of the present invention includes a support unit that supports a peripheral portion of a first main surface of an object to be adsorbed, the object to be adsorbed having a first main surface and a second main surface opposite to the first main surface. Adsorbing means for adsorbing the object to be adsorbed from the second main surface side of the object to be adsorbed. A plurality of pressing members provided on the adsorbing means for pressing the object to be adsorbed from the second main surface side of the object to be adsorbed. The plurality of pressing members are respectively arranged at positions corresponding to at least two of the plurality of corner portions of the second main surface of the object to be adsorbed.

[0007] An adsorption device according to another aspect of the present invention includes a support unit that supports a peripheral portion of a first main surface of an object to be adsorbed, the object to be adsorbed having a first main surface and a second main surface opposite to the first main surface. Adsorbing means for adsorbing the object to be adsorbed from the second main surface side of the object to be adsorbed. A pressing member provided on the adsorbing means for pressing the object to be adsorbed from the second main surface side of the object to be adsorbed before the adsorbing means adsorbs the object to be adsorbed. A support region that is a region on the first main surface where the support unit supports the object to be adsorbed and a pressing region that is a region on the second main surface where the pressing member presses the object to be adsorbed do not overlap when viewed from a direction perpendicular to the first main surface or the second main surface. The pressing member is arranged at a position corresponding to a corner portion of the second main surface of the object to be adsorbed.

Advantages of the Invention

[0008] According to the present invention, the object to be adsorbed can be satisfactorily adsorbed to the electrostatic chuck without being affected by the distortion of the vacuum chamber caused by vacuum formation.

Brief Description of the Drawings

[0009]

Figure 1

Figure 2

Figure 3

Figure 4a

Figure 4b

Figure 5

Figure 6

Embodiments for Carrying Out the Invention

[0010] Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative of the preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. Also, in the following description, the hardware configuration, software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. of the apparatus are not intended to limit the scope of the present invention only to those, unless otherwise specifically described.

[0011] The present invention can be applied, for example, to a film forming apparatus that deposits various materials on the surface of a substrate to form a film, and is preferably applicable to an apparatus that forms a thin film (material layer) of a desired pattern by vacuum evaporation.

[0012] As the material of the substrate, any material such as glass, a film of a polymer material, metal, semiconductor (for example, silicon), etc. can be selected. The substrate may be, for example, a silicon wafer or a substrate with a film such as polyimide laminated on a glass substrate. Also, as the film forming material (which may also be referred to as a vapor deposition material in the case of vapor deposition), any material such as an organic material, a metallic material (metal, metal oxide, etc.) can be selected.

[0013] In the following description, a vapor deposition apparatus is described as a film forming apparatus, but the film forming apparatus according to the present invention is not limited thereto, and it may be a sputtering apparatus or a CVD (Chemical Vapor Deposition) apparatus. Specifically, the technology of the present invention is applicable to manufacturing apparatuses for various electronic devices such as semiconductor devices, magnetic devices, and electronic components, as well as optical components. Specific examples of electronic devices include light emitting elements, photoelectric conversion elements, touch panels, and the like. The present invention is preferably applicable to manufacturing apparatuses for organic light emitting elements such as OLEDs and organic photoelectric conversion elements such as organic thin film solar cells. Note that the electronic devices in the present invention also include display devices (e.g., organic EL display devices) and lighting devices (e.g., organic EL lighting devices) equipped with light emitting elements, and sensors (e.g., organic CMOS image sensors) equipped with photoelectric conversion elements.

[0014] <Manufacturing Apparatus for Electronic Devices> FIG. 1 is a plan view schematically showing a partial configuration of a manufacturing apparatus for electronic devices.

[0015] The manufacturing apparatus in FIG. 1 is used, for example, for manufacturing a display panel of an organic EL display device for a smartphone. In the case of a display panel for a smartphone, for example, after performing film formation for forming an organic EL element on a rectangular substrate of the 4.5th generation (G4.5) (about 700 mm × about 900 mm), a full size (about 1500 mm × about 1850 mm) or a half cut size (about 1500 mm × about 925 mm) rectangular substrate of the 6th generation (G6), the substrate is cut out to produce a plurality of small-sized panels.

[0016] A manufacturing apparatus for electronic devices generally includes a plurality of cluster devices 1 and a relay device connecting between the plurality of cluster devices 1.

[0017] The cluster device 1 includes a plurality of film forming devices 11 that perform processing (e.g., film formation) on the substrate S, a plurality of mask stock devices 12 that store the mask M before and after use, and a transfer chamber 13 disposed in the center thereof. As shown in FIG. 1, the transfer chamber 13 is connected to each of the plurality of film forming devices 11 and mask stock devices 12.

[0018] In the transfer chamber 13, a transfer robot 14 for transferring the substrate S and the mask M is disposed. The transfer robot 14 transfers the substrate S from the pass chamber 15 of the relay device disposed on the upstream side to the film forming device 11. Further, the transfer robot 14 transfers the mask M between the film forming device 11 and the mask stock device 12. The transfer robot 14 is, for example, a robot having a structure in which a robot hand for holding the substrate S or the mask M is attached to an articulated arm.

[0019] In the film forming device 11 (also referred to as an evaporation device), the evaporation material stored in the evaporation source is heated by a heater and evaporated, and is deposited on the substrate S through the mask M. A series of film forming processes such as the delivery of the substrate S to and from the transfer robot 14, the adjustment of the relative positions of the substrate S and the mask M (alignment), the fixing of the substrate S on the mask M, and film formation (evaporation) are performed by the film forming device 11.

[0020] In the mask stock device 12, a new mask used in the film forming process in the film forming device 11 and a used mask are stored separately in two cassettes. The transfer robot 14 transfers the used mask from the film forming device 11 to the cassette of the mask stock device 12, and transfers the new mask stored in another cassette of the mask stock device 12 to the film forming device 11.

[0021] In the cluster device 1, relay devices are connected to the upstream side and the downstream side in the flow direction of the substrate S, respectively. Each relay device has a buffer chamber 16, a turning chamber 17, and a pass chamber 15 in this order from the upstream side to the downstream side. That is, in the cluster device 1, the pass chamber 15 is connected to the upstream side, and the buffer chamber 16 is connected to the downstream side. The pass chamber 15 connected to the upstream side (the left side in FIG. 1) of the cluster device 1 in the flow direction of the substrate S serves as a chamber for delivering the substrate S from the upstream side to the cluster device 1. The buffer chamber 16 connected to the downstream side (the right side in FIG. 1) of the cluster device 1 serves as a chamber for delivering the substrate S on which the film formation process has been completed in the cluster device 1 to another cluster device on the downstream side. The transfer robot 14 in the transfer chamber 13 receives the substrate S from the upstream pass chamber 15 and transfers it to one of the film forming devices 11 (for example, the film forming device 11a) in the cluster device 1. Further, the transfer robot 14 receives the substrate S on which the film formation process in the cluster device 1 has been completed from one of the plurality of film forming devices 11 (for example, the film forming device 11b) and transfers it to the buffer chamber 16 connected to the downstream side.

[0022] A turning chamber 17 for changing the orientation of the substrate may be installed between the buffer chamber 16 and the pass chamber 15. The turning chamber 17 is provided with a transfer robot 18 for receiving the substrate S from the buffer chamber 16, rotating the substrate S by 180°, and transferring it to the pass chamber 15. Thereby, the orientations of the substrate S in the upstream cluster device and the downstream cluster device become the same, facilitating substrate processing.

[0023] The pass chamber 15, the buffer chamber 16, and the turning chamber 17 are so-called relay devices that connect between cluster devices. The relay devices installed on the upstream side and / or the downstream side of the cluster device include at least one of a pass chamber, a buffer chamber, and a turning chamber.

[0024] The film forming device 11, the mask stock device 12, the transfer chamber 13, the buffer chamber 16, the turning chamber 17, etc. are maintained in a high vacuum state during the process of manufacturing the organic light emitting element. The pass chamber 15 is usually maintained in a low vacuum state, but may be maintained in a high vacuum state if necessary.

[0025] In this embodiment, with reference to FIG. 1, the configuration of the manufacturing apparatus for an electronic device has been described. However, the present invention is not limited thereto, and other types of devices or chambers may be included, and the arrangement among these devices or chambers may be changed. For example, the manufacturing apparatus for an electronic device may be of an in-line type instead of a cluster type. That is, it may have a configuration in which a substrate and a mask are mounted on a carrier and film formation is performed while being transported through a plurality of film forming apparatuses arranged in a line. Further, it may have a structure of a type combining a cluster type and an in-line type. For example, the film formation up to the organic layer may be performed by a cluster type manufacturing apparatus, and from the film formation process of the electrode layer (cathode layer) to the sealing process and the cutting process and the like may be performed by an in-line type manufacturing apparatus.

[0026] Hereinafter, the specific configuration of the film forming apparatus 11 will be described.

[0027] <Film forming apparatus> FIG. 2 is a schematic diagram showing the configuration of the film forming apparatus 11. In the following description, an XYZ orthogonal coordinate system with the vertical direction as the Z direction is used. When the rectangular substrate S is fixed so as to be parallel to the horizontal plane (XY plane) during film formation, the short side direction (direction parallel to the short side) of the substrate S is the X direction, and the long side direction (direction parallel to the long side) is the Y direction. Also, the rotation angle around the Z axis is represented by θ.

[0028] The film forming apparatus 11 includes a vacuum vessel 21 (vessel) maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas, a substrate support unit 22 (support unit) provided inside the vacuum vessel 21, a mask support unit 23, an electrostatic chuck 24 (adsorbing means), a magnet plate 31, and an evaporation source 25 (film forming means).

[0029] The substrate support unit 22 is a means for receiving and holding the substrate S conveyed by the transfer robot 14 provided in the transfer chamber 13, and is also called a substrate holder. In the present embodiment, the substrate support unit 22 has a plurality of support portions 22a, and the plurality of support portions 22a support the peripheral portion of the first main surface (here, the bottom surface) of the rectangular substrate S. For example, the substrate support unit 22 supports two opposite side portions of the substrate S (in the case of a rectangular substrate, a pair of long side portions or a pair of short side portions), or four side portions. Note that the "peripheral portion" in this specification does not necessarily include the peripheral edge. For example, the plurality of support portions 22a of the substrate support unit 22 may support the substrate S by contacting a portion closer to the center of the substrate S by a certain distance from the peripheral edge without contacting the peripheral edge of the bottom surface of the substrate S. Also, it goes without saying that the "side portion" in this specification does not necessarily include the side itself.

[0030] Below the substrate support unit 22, a mask support unit 23 is provided. The mask support unit 23 is a means for receiving and holding the mask M conveyed by the transfer robot 14 provided in the transfer chamber 13, and is also called a mask holder. The mask support unit 23 is arranged at a position such that the mask M supported by the mask support unit 23 is disposed between the substrate S supported by the substrate support unit 22 and the evaporation source 25 which is a film forming means.

[0031] The mask M has an opening pattern corresponding to the thin film pattern formed on the substrate S, and is placed on the mask support unit 23. In particular, the mask used for manufacturing the organic EL element for a smartphone is a metal mask in which a fine opening pattern is formed, and is also called an FMM (Fine Metal Mask).

[0032] At a position facing the second main surface of the substrate S supported by the substrate support unit 22 (here, above the substrate support unit 22), an electrostatic chuck 24 is provided as a substrate adsorption means or an adsorbed body adsorption means for adsorbing and fixing the substrate S by electrostatic attraction. The electrostatic chuck 24 has a structure in which an electric circuit such as a metal electrode is embedded in a dielectric (for example, a ceramic material) matrix.

[0033] The electrostatic chuck 24 may be a Coulomb force type electrostatic chuck in which a dielectric having a relatively high resistance is interposed between the electrode and the adsorption surface, and adsorption is performed by the Coulomb force between the electrode and the adsorbed body. Or a Johnson-Rahbek force type electrostatic chuck in which a dielectric having a relatively low resistance is interposed between the electrode and the adsorption surface, and adsorption is performed by the Johnson-Rahbek force generated between the adsorption surface of the dielectric and the adsorbed body. It may also be a gradient force type electrostatic chuck that adsorbs the adsorbed body by a non-uniform electric field.

[0034] When the adsorbed body is a conductor or a semiconductor (silicon wafer), it is preferable to use a Coulomb force type electrostatic chuck or a Johnson-Rahbek force type electrostatic chuck. When the adsorbed body is an insulator such as glass, it is preferable to use a gradient force type electrostatic chuck.

[0035] The electrostatic chuck 24 may be formed of a single plate or may be formed to have a plurality of sub-plates. Also, even when it is formed of a single plate, it may include a plurality of electric circuits inside, and the electrostatic attraction may be controlled to be different depending on the position within the single plate.

[0036] In the present embodiment, the electrostatic chuck is mainly described as the substrate adsorption means, but the present invention is not limited to this, and an adhesive chuck that adsorbs the substrate by adhesive force may also be used.

[0037] The film forming apparatus 11 according to the present embodiment further includes a substrate pressing mechanism 300 (adsorbed body pressing mechanism) that drives a pressing member 30 for pressing the corner portions of the substrate S supported by the substrate support unit 22 from the upper surface side (second main surface side) of the substrate S. For this reason, a hole 24a (opening) through which the pressing member 30 can penetrate may be formed in the electrostatic chuck 24. The suction device 110 of the substrate S including the pressing member 30 and the suction method by the suction device 110 will be described later. Note that the corner portions of the substrate S do not have to be "corners" in a mathematically strict sense, and may be rounded corners formed by, for example, R processing or the like.

[0038] Although not shown in FIG. 2, a cooling mechanism (for example, a cooling plate) for suppressing the temperature rise of the substrate S may be provided on the side opposite to the suction surface of the electrostatic chuck 24, so as to suppress the alteration and deterioration of the organic material deposited on the substrate S.

[0039] Above the electrostatic chuck 24, a magnet plate 31 is provided for applying a magnetic force to the metal mask M to attract the mask and bringing the mask M into close contact with the substrate S. The magnet plate 31 has a permanent magnet or an electromagnet, and applies a magnetic force to the mask M through the electrostatic chuck 24 and the substrate S. The magnet plate 31 may be partitioned into a plurality of modules arranged side by side when viewed from a direction perpendicular to the suction surface of the electrostatic chuck 24. Further, the magnet plate 31 may be integrally formed with a cooling plate described later.

[0040] The evaporation source 25 includes a crucible (not shown) for storing the vapor deposition material to be formed on the substrate S, a heater (not shown) for heating the crucible, a shutter (not shown) for preventing the vapor deposition material from scattering onto the substrate S until the evaporation rate from the evaporation source becomes constant, and the like. The evaporation source 25 can have various configurations according to the application, such as a point evaporation source, a linear evaporation source, and a planar evaporation source.

[0041] Although not shown in FIG. 2, the film forming apparatus 11 includes a film thickness monitor (not shown) and a film thickness calculation unit (not shown) for measuring the thickness of the film deposited on the substrate S. As the film thickness monitor, a crystal monitor including a crystal oscillator can be used.

[0042] On the upper outer side (atmosphere side) of the vacuum chamber 21, a distance adjustment unit 27, a position adjustment mechanism 29, etc. are provided. The distance adjustment unit 27 adjusts the distance between the electrostatic chuck 24 and the substrate support unit 22 and the mask support unit 23 by moving the electrostatic chuck 24 and the substrate support unit 22 up and down (Z-direction movement), and approaches and separates (separates) the substrate S and the mask M in the thickness direction (Z-direction) of the substrate S. The distance adjustment unit 27 raises the substrate S (the object to be adsorbed) supported by the substrate support unit 22 toward the electrostatic chuck 24 to adjust the distance between the substrate S (the object to be adsorbed) supported by the substrate support unit 22 and the electrostatic chuck 24. The distance adjustment unit 27 and the position adjustment mechanism 29 are composed of, for example, a motor and a ball screw, or a motor and a linear guide, etc., but the present invention is not limited to this, and other configurations known in the art may be adopted. The pressing member 30 presses the upper surface (the second main surface) of the substrate S of the substrate S (the object to be adsorbed) adjusted by the distance adjustment unit 27.

[0043] The position adjustment mechanism 29 is a driving means for the alignment of the electrostatic chuck 24. The position adjustment mechanism 29 moves the entire electrostatic chuck 24 in the X direction, Y direction, and rotates it by θ with respect to the substrate support unit 22 and the mask support unit 23. In the present embodiment, in a state where the substrate S is adsorbed, alignment for adjusting the relative position between the substrate S and the mask M is performed by adjusting the position of the electrostatic chuck 24 in the X, Y, and θ directions.

[0044] In addition to the drive mechanism described above, an alignment camera 20 for photographing the alignment marks formed on the substrate S and the mask M may be installed on the outer upper surface of the vacuum chamber 21 through a transparent window provided on the upper surface of the vacuum chamber 21. In the present embodiment, the alignment camera 20 may be installed at positions corresponding to two corner portions on the diagonal line of the rectangular substrate S, mask M, and electrostatic chuck 24, or at positions corresponding to the four corner portions of the rectangle, or at the central portions of two opposing sides.

[0045] The alignment camera 20 installed in the film forming apparatus 11 of the present embodiment is a fine alignment camera used to adjust the relative positions of the substrate S and the mask M with high precision. It has a narrow field of view but high resolution. The film forming apparatus 11 may have a rough alignment camera with a relatively wide field of view and low resolution in addition to the alignment camera 20 (fine alignment camera).

[0046] The position adjustment mechanism 29 performs alignment to relatively move and adjust the positions of the substrate S and the mask M based on the position information of the substrate S and the mask M acquired by the alignment camera 20.

[0047] The film forming apparatus 11 includes a control device 32. The control device 32 has functions such as controlling the conveyance and alignment of the substrate S and the mask M (controlling each moving mechanism), controlling the evaporation source 25, and controlling film formation.

[0048] In particular, the control device 32 according to the present embodiment functions as an adsorption control means for controlling the lifting of the substrate support unit 22 and the electrostatic chuck 24 by the distance adjustment unit 27 during the adsorption operation of the substrate S by the electrostatic chuck 24. The control device 32 can control the lifting of the substrate S and the electrostatic chuck 24 during the pressing of the substrate S by the pressing member 30 and the adsorption process of the substrate S to the electrostatic chuck 24. However, the present invention is not limited thereto, and an adsorption control means may be provided separately from the control device of the film forming apparatus 11.

[0049] The control device 32 can also have a function of controlling the application of voltage to the electrostatic chuck 24, which will be described later with reference to FIG. 3.

[0050] The control device 32 can be configured by, for example, a computer having a processing unit 32b (processor), a storage unit 32c (memory, storage), a communication interface 32a (communication IF), and the like. In this case, the functions of the control device 32 are realized by the processor executing a program stored in the memory or storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (programmable logic controller) may be used. Alternatively, part or all of the functions of the control device 32 may be configured by a circuit such as an ASIC or an FPGA. Also, a control device 32 may be installed for each film forming apparatus 11, or one control device 32 may be configured to control a plurality of film forming apparatuses 11.

[0051] <Adsorption device> FIG. 3 is a schematic cross-sectional view showing the configuration of an adsorption device 110 according to an embodiment of the present invention. Hereinafter, the adsorption device according to this embodiment will be described on the premise of a rectangular substrate, but the present invention is not limited thereto. In this embodiment, an example in which the adsorption device 110 is applied to the film forming apparatus 11 will be described, but the present invention is not limited to this example. The configuration of the adsorption device 110 can also be applied to a device in a vacuum chamber (for example, a pass chamber 15 or a buffer chamber 16) that performs a process of adsorbing the substrate S using the electrostatic chuck 24. For example, when film thickness measurement or the like of the film formed on the substrate S in the film forming apparatus 11 is performed in a vacuum chamber downstream of the film forming apparatus 11, it is also possible to apply the adsorption device 110 of this embodiment to such a device.

[0052] Referring to FIG. 3, the suction device 110 includes a substrate support unit 22 including a support portion 22a, an electrostatic chuck 24 for sucking the substrate S, and a substrate pressing mechanism 300 (a pressed object pressing mechanism) provided in the electrostatic chuck 24. In FIG. 3, a holding member 303 for holding the substrate pressing mechanism 300 to the electrostatic chuck 24 is provided on a surface 24b opposite to the suction surface 24c of the electrostatic chuck 24. A drive source 301 that generates a rotational driving force (rotation), such as a vacuum motor, is attached to a flange 303a of the holding member 303. The drive source 301 generates a rotation for moving the pressing member 30 in the Z direction (vertical direction).

[0053] The connecting member 302 is constituted by, for example, a coupling or the like, and the transmission mechanism 304 can be constituted by, for example, a ball screw or the like. The connecting member 302 connects the rotation axis of the drive source 301 and the shaft (screw shaft) of the transmission mechanism 304. The transmission mechanism 304 transmits the rotation generated by the drive source 301 to the conversion unit 30c.

[0054] A conversion mechanism (for example, a nut) that converts the rotation (rotary motion) transmitted by the transmission mechanism 304 into a movement in the translational direction (linear movement) is provided in the conversion unit 30c connected to the transmission mechanism 304.

[0055] The pressing member 30 moves in the Z direction (vertical direction) based on the movement in the translational direction converted by the conversion unit 30c. By changing the rotation direction of the drive source 301, it is possible to raise the pressing member 30 (move it vertically upward) or lower the pressing member 30 (move it vertically downward).

[0056] For example, the drive source 301 generates a rotation in a first direction for moving the pressing member 30 vertically downward (downward in the Z-axis direction), and the pressing member 30 moves vertically downward based on the rotation in the first direction transmitted by the transmission mechanism 304, so that the end of the pressing member 30 protrudes from the suction surface 24c of the electrostatic chuck 24 that sucks the second main surface side of the substrate S (pressed object) (for example, ST32 in FIG. 3).

[0057] Further, the drive source generates rotation in the second direction (opposite to the first direction) to move the pressing member 30 vertically upward (upward in the Z-axis direction). When the pressing member 30 moves vertically upward based on the rotation in the second direction transmitted by the transmission mechanism 304, the end of the pressing member 30 protruding from the adsorption surface 24c of the electrostatic chuck 24 retracts so as not to protrude from the adsorption surface 24 of the electrostatic chuck 24 (for example, ST31 in FIG. 3).

[0058] In order to protect the substrate S, the pressing member 30 can be made of a resin member such as, for example, Teflon (registered trademark), polyetheretherketone (PEEK), or polyimide. Further, the main material of the pressing member 30 can be made of a metal member such as stainless steel, and the surface of the metal member can be coated with a resin member such as Teflon (registered trademark), PEEK, polyimide, or DLC (Diamond-Like Carbon). Further, in order to suppress the generation of static electricity, the surface of the resin member may be subjected to a conductive coating.

[0059] Then, in order for the pressing member 30 to press the substrate S through the electrostatic chuck 24, the electrostatic chuck 24 is provided with a hole 24a (opening) through which the pressing member 30 can pass. For the pressing member 30 to penetrate, the hole 24a is formed at a position corresponding to the position of the pressing member 30, that is, the pressing region of the substrate S. And preferably, the number of the holes 24a also corresponds to the number of the pressing members 30.

[0060] A detection sensor 30b that can be constituted by a touch sensor, a pressure sensor, or the like is provided at the end of the pressing member 30. The detection sensor 30b detects contact with the upper surface (second main surface) of the substrate S (the object to be adsorbed). The detection sensor 30b can transmit detection information by wireless communication, and the detection information detected by the detection sensor 30b is input to the control device 32 via a communication interface 32a (communication IF). The communication interface 32a (communication IF) can receive information of various sensors provided in the film forming apparatus and the adsorption apparatus.

[0061] Based on the detection information transmitted from the detection sensor 30b, the control device 32 controls the rotational speed and rotational direction of the drive source 301. By controlling the rotational speed of the drive source 301, the control device 32 controls the vertical movement amount of the pressing member 30, and by controlling the rotational direction of the drive source 301, the control device 32 controls the movement direction of the pressing member 30. That is, by controlling the rotational direction of the drive source 301, the control device 32 controls the movement of the pressing member 30 vertically upward or vertically downward.

[0062] By controlling the vertical movement amount of the pressing member 30, the protruding amount or pressing force of the pressing member 30 protruding from the adsorption surface 24c of the electrostatic chuck 24 can be adjusted. The substrate pressing mechanism 300 moves the pressing member 30 in the Z direction (vertical direction) to press the corner of the substrate S supported by the support portion 22a of the substrate support unit 22 from above downward. When a plurality of substrate pressing mechanisms 300 are provided on the electrostatic chuck 24, the control device 32 can adjust the protruding amount or pressing force of each pressing member 30 by controlling the rotational speed and rotational direction of the drive source 301 of each substrate pressing mechanism 300.

[0063] Due to the distortion of the vacuum container 21 (chamber) generated by vacuum formation, inclination may occur in the electrostatic chuck 24 and the like. Therefore, when applying the result of adjusting the inclination of the substrate posture in the atmosphere to the inclination adjustment in the vacuum environment, due to the influence of the inclination caused by vacuum formation, the protruding amount of the pressing member 30 may become unbalanced and become a factor of poor adhesion. According to the substrate pressing mechanism 300 of the present embodiment, in the vacuum environment, the inclination of the posture of the substrate S can be adjusted. Therefore, the inclination of the posture of the substrate S can be adjusted without being affected by the distortion of the vacuum container 21 generated by vacuum formation.

[0064] The control device 32 changes the setting of the range (stroke) in which the pressing member 30 can move in the vertical direction according to the content of the process. The setting of the stroke according to the content of the process can be stored in advance in the storage unit 32c. By changing the stroke according to the content of the process, the substrate pressing mechanism 300 can be applied to various scenarios (processes).

[0065] When the control device 32 adsorbs the substrate S (the object to be adsorbed) to the electrostatic chuck 24, the pressing member 30 is moved in the vertical direction within the range of the first movement amount as an adjustment of the inclination of the posture of the substrate S. Also, when the control device 32 peels the substrate S (the object to be adsorbed) from the electrostatic chuck 24, for example, when a de-chuck error occurs, the pressing member 30 is moved in the vertical direction within a second movement amount range wider than the first movement amount range.

[0066] For the adjustment of the inclination of the posture of the substrate S, for example, about 5 mm may be sufficient as the range of the first movement amount (the first stroke). Also, when forcibly peeling the substrate S from the electrostatic chuck 24 when a de-chuck error occurs, for example, about 50 mm may be sufficient as the range of the second movement amount (the second stroke).

[0067] In the example shown in FIG. 3, a configuration example in which the substrate pressing mechanism 300 is provided on the surface 24b opposite to the adsorption surface 24c of the electrostatic chuck 24 is shown, but the example is not limited thereto. For example, if the electrostatic chuck 24 has a sufficient thickness, the substrate pressing mechanism 300 may be disposed inside the electrostatic chuck 24.

[0068] The adsorption device 110 may further include a distance adjustment unit 27 for raising and lowering the substrate support unit 22 and the electrostatic chuck 24. Then, the control of the adsorption operation of the substrate S by the electrostatic chuck 24 in the adsorption device 110 may be performed by adsorption control means. The adsorption control means may be embodied as a functional unit of the control device of the film forming apparatus 11, or may be embodied as a separate control device.

[0069] The substrate support unit 22 is an example of an adsorbate support unit for supporting a substrate S which is an object to be adsorbed. The substrate S has its peripheral portion of the first main surface (the bottom surface in FIG. 3) supported by the support portion 22a of the substrate support unit 22.

[0070] The substrate S whose peripheral portion of the bottom surface is supported by the support portion 22a of the substrate support unit 22 tends to have its central portion bent downward due to its own weight or the like. As a result, the peripheral portion of the substrate S is partially in contact with and supported by the upper surface of the support portion 22a, and as it approaches the peripheral edge of the substrate S, it tends to lift off and separate from the upper surface of the support portion 22a.

[0071] The electrostatic chuck 24 is a substrate adsorption means installed above the support portion 22a of the substrate support unit 22 for adsorbing and fixing the substrate S by electrostatic attraction. A predetermined voltage is applied to the electrostatic chuck 24 to induce electrostatic attraction. According to the present embodiment, there is no particular limitation on the specific method of applying a voltage to the electrostatic chuck 24. For example, a voltage may be applied to the entire electrostatic chuck 24 at the same time, or a voltage may be applied sequentially to a plurality of electrode portions or adsorption portions of the electrostatic chuck 24.

[0072] According to the present embodiment, the electrostatic chuck 24 adsorbs the substrate S being pressed by a pressing member 30 described later from the upper surface side (the second main surface side) of the substrate S. In the present embodiment, for the adsorption of the substrate S, before applying a predetermined voltage to the electrostatic chuck 24, the substrate S is pressed by the pressing member 30. Thereby, the central portion of the substrate S that was bent downward due to its own weight can be lifted, and the substrate S can be adsorbed to the electrostatic chuck 24 in a state where the degree of bending of the substrate S is reduced or removed. Therefore, not only can the adsorption time be shortened, but also the occurrence of wrinkles remaining on the substrate S adsorbed to the electrostatic chuck 24 can be suppressed. Also, it is possible to reduce the voltage applied to the electrostatic chuck 24.

[0073] The pressing member 30 is for pressing the substrate S from above by having one end thereof in contact with the second main surface (the upper surface in FIG. 3) of the substrate S. In the present embodiment, as an example, the pressing region, which is the region where the pressing member 30 presses the upper surface of the substrate S, is located at a corner of the substrate S. For this reason, the pressing member 30 is installed at a position corresponding to the corner of the rectangular substrate S supported by the substrate support unit 22. More specifically, the pressing region by the pressing member 30 is located at at least two of the four corners of the substrate S.

[0074] FIGS. 4a and 4b are respectively plan schematic views of the suction device 110 showing the position of the pressing region 30a by the pressing member 30.

[0075] As shown in FIG. 4a, the pressing member 30 may be installed at positions corresponding to a pair of corners located on the diagonal line among the four corners of the rectangular substrate S. According to this, it is possible to effectively press the substrate S while minimizing the number of the pressing members 30.

[0076] Alternatively, as shown in FIG. 4b, the pressing member 30 may be installed at positions corresponding to all of the four corners of the rectangular substrate S. In this way, by pressing two or four corners of the substrate S from above with the pressing member 30, the central portion of the bent substrate S can be lifted, and the degree of downward bending can be reduced or made substantially flat. In particular, by pressing the corners farthest from the central portion where the bending is most severe with the pressing member 30, the bending of the central portion of the substrate S can be effectively reduced.

[0077] According to the embodiment of the present invention shown in FIG. 4a or FIG. 4b, since the pressing member 30 is provided at the corner of the substrate S, the pressing region (30a, for example, the corner) by the pressing member 30 does not overlap with the support region (for example, the side portion) where the substrate S is supported by the support portion 22a of the substrate support unit 22 when viewed from the vertical direction (that is, the direction perpendicular to the substrate surface). Therefore, the substrate S can be sufficiently pressed by the pressing member 30 without being restricted by the support portion 22a.

[0078] The projection area obtained by vertically projecting the support area supported by the substrate support unit 22 onto the upper surface of the substrate S and the pressing area 30a pressed by the pressing member 30 are arranged along a virtual line L (see FIG. 4b) that forms a shape (for example, a rectangle) similar to the outer periphery of the lower surface of the substrate S.

[0079] According to one aspect of the present embodiment, a plurality of substrate pressing mechanisms 300 are provided on the electrostatic chuck 24, and the control device 32 can adjust the protruding amount or pressing force of each pressing member 30 by controlling the rotation speed and rotation direction of the drive source 301 of each substrate pressing mechanism 300. According to the substrate pressing mechanism 300 of the present embodiment, the inclination of the posture of the substrate S can be adjusted in a vacuum environment. Therefore, the inclination of the posture of the substrate S can be adjusted without being affected by the distortion of the vacuum chamber 21 caused by vacuum formation.

[0080] [Adsorption method] Next, an adsorption method according to an embodiment of the present invention will be described. The adsorption method according to the present embodiment includes at least (1) a support step of supporting the substrate S, which is an object to be adsorbed, by the substrate support unit 22, (2) a pressing step of pressing the substrate S, which is an object to be adsorbed, by the pressing member 30, and (3) an adsorption step of adsorbing the substrate S, which is an object to be adsorbed, by the electrostatic chuck 24. Hereinafter, each step will be described in detail with reference to the drawings.

[0081] [Substrate support step]< In this step, the peripheral portion of the first main surface (here, the film-forming surface) of the substrate S, which is the object to be adsorbed, is supported by the substrate support unit 22. In this embodiment, the film-forming surface of the substrate S is arranged to face downward in the vertical direction, and the peripheral portion of the film-forming surface of this substrate S is supported from below by the substrate support unit 22. Referring to ST51 in FIG. 5, the substrate S, which is the object to be adsorbed and has been carried into the film-forming apparatus 11, is supported in the support region by the support portion 22a of the substrate support unit 22. At this time, the pressing member 30, the electrostatic chuck 24, and the substrate S are separated from each other. As shown in the drawing, the central portion of the substrate S is bent downward due to its own weight. Also, before the electrostatic chuck 24 adsorbs the substrate S, in order to press the pressing region on the upper surface of the substrate S with the pressing member 30, the distance adjustment unit 27 raises the substrate S (the object to be adsorbed) supported by the substrate support unit 22 toward the electrostatic chuck 24 to adjust the distance between the substrate S (the object to be adsorbed) supported by the support portion 22a of the substrate support unit 22 and the electrostatic chuck 24.

[0082] <Pressing Step> In this step, the substrate S is pressed from the second main surface (here, the surface opposite to the film-forming surface) of the substrate S, which is the object to be adsorbed, by the pressing member 30. The pressing member 30 is moved vertically downward by the substrate pressing mechanism 300, and the pressing member 30 penetrates through the hole 24a provided in the electrostatic chuck 24. The end portion of the pressing member 30 protrudes from the adsorption surface 24c of the electrostatic chuck 24. When the substrate support unit 22 continues to rise due to the operation of the distance adjustment unit 27, the upper surface (the second main surface) of the substrate S will come into contact with the pressing member 30 (ST52 in FIG. 5).

[0083] In each of the plurality of substrate pressing mechanisms 300, each detection sensor 30b detects contact with the upper surface (second main surface) of the substrate S. Detection information from each detection sensor 30b is transmitted to the control device 32. The detection information transmitted by the detection sensor 30b includes an identification signal for identifying the presence or absence of contact. As an example of the identification signal, for example, in a state where the detection sensor 30b and the upper surface (second main surface) of the substrate S are not in contact (non-contact state), detection information including the identification signal "0" is transmitted. For example, in a state where the detection sensor 30b and the upper surface (second main surface) of the substrate S are in contact (contact state), detection information including the identification signal "1" is transmitted.

[0084] Based on the detection information transmitted from each detection sensor 30b, the control device 32 determines where the detection sensor 30b is in contact with the upper surface (second main surface) of the substrate S and where it is not. When the identification signals of the detection information transmitted from all the detection sensors 30b indicate a contact state, the control device 32 determines that the substrate S (the object to be adsorbed) supported by the substrate support unit 22 is supported in a non-tilted state.

[0085] On the other hand, in the detection information transmitted from the plurality of detection sensors 30b, when an identification signal indicating a contact state and an identification signal indicating a non-contact state are included, the control device 32 determines that the substrate S (the object to be adsorbed) supported by the substrate support unit 22 is supported in a tilted state. The control device 32 identifies the detection sensor 30b that transmitted the detection signal indicating the non-contact state, and adjusts the position of the substrate support unit 22 on the side of the identified detection sensor 30b. The control device 32 controls the distance adjustment unit 27 to raise the substrate support unit 22 until the detection sensor 30b that transmitted the detection signal indicating the non-contact state reaches a position where it transmits a detection signal indicating the contact state.

[0086] In a state where the upper surface of the substrate S is in contact with the detection sensor 30b, that is, in a state where the substrate S (the object to be adsorbed) is not tilted, the control device 32 controls the drive source 301 of each substrate pressing mechanism 300 to move the pressing member 30 vertically downward to press the corners of the upper surface (the second main surface) of the substrate S. In this step, among the four corners of the rectangular substrate S, pressing is performed on at least two corners, preferably two opposite corners or all four corners. As a result, the bent substrate S can have its central portion lifted, reducing the bending.

[0087] <Adsorption step> In this step, the substrate S (the object to be adsorbed) is adsorbed from the upper surface (the second main surface) side of the substrate S pressed by the pressing member 30. As described above, in the pressing step, the bending of the substrate S is reduced by pressing the substrate S with the pressing member 30. While maintaining the state where the substrate S is pressed by the pressing member 30, the control device 32 controls the drive source 301 of the substrate pressing mechanism and the distance adjustment unit 27 to raise the pressing member 30 and the substrate support unit 22 to bring the substrate S closer to the electrostatic chuck 24. In this state, as shown in ST53, a predetermined voltage ΔV is applied to the electrostatic chuck 24 to adsorb the substrate S pressed by the pressing member 30 with the electrostatic chuck 24.

[0088] Note that the substrate S may be brought closer to the electrostatic chuck 24 after applying a predetermined voltage to the electrostatic chuck 24. Also, the adsorption step (ST53) may start before the pressing step (ST52) is completed.

[0089] According to the present embodiment, by adsorbing the substrate S whose deflection is reduced by being pressed by the pressing member 30 with the electrostatic chuck 24, the time required for adsorption can be shortened, and the process time can be shortened. And since adsorption is performed in a state where the deflection due to the self-weight of the substrate S is reduced, it is possible to suppress wrinkles from remaining on the substrate S after being adsorbed by the electrostatic chuck 24 (that is, the substrate S is adsorbed by the electrostatic chuck over a larger area), and it is possible to suppress a decrease in the accuracy of the film forming process. Also, it is possible to reduce the magnitude of the voltage ΔV applied to the electrostatic chuck 24. In particular, by pressing the corner portion far from the central portion of the substrate S, the deflection of the central portion can be more effectively reduced.

[0090] [Film forming process] Hereinafter, a film forming method employing the adsorption method according to the present embodiment will be described.

[0091] With the mask M placed on the mask support unit 23 in the vacuum chamber 21, the substrate S is carried into the vacuum chamber 21 of the film forming apparatus 11 by the transfer robot 14 in the transfer chamber 13.

[0092] The hand of the transfer robot 14 that has entered the vacuum chamber 21 places the substrate S on the support portion 22a of the substrate support unit 22 (substrate support step). Before adsorbing the substrate S with the electrostatic chuck 24, in order to press the pressing region on the upper surface of the substrate S with the pressing member 30, the distance adjustment unit 27 raises the substrate S (object to be adsorbed) supported by the substrate support unit 22 toward the electrostatic chuck 24, and adjusts the distance between the substrate S (object to be adsorbed) supported by the support portion 22a of the substrate support unit 22 and the electrostatic chuck 24.

[0093] Subsequently, the substrate support unit 22 is raised, and the corner of the substrate S is pressed by the pressing member 30 (pressing step). The control device 32 adjusts the inclination of the substrate S (the object to be adsorbed) based on the detection information of the detection sensor 30b. In a state where the upper surface of the substrate S and the detection sensor 30b are in contact, that is, in a state where the substrate S (the object to be adsorbed) is not inclined, the control device 32 controls the drive source 301 of each substrate pressing mechanism 300 to move the pressing member 30 vertically downward to press the corner of the upper surface (the second main surface) of the substrate S.

[0094] Subsequently, while maintaining the state where the substrate S is pressed by the pressing member 30, the control device 32 controls the drive source 301 of the substrate pressing mechanism and the distance adjustment unit 27 to raise the pressing member 30 and the substrate support unit 22 to approach the substrate S to the electrostatic chuck 24. In this state, a predetermined voltage ΔV is applied to the electrostatic chuck 24 to adsorb the substrate S pressed by the pressing member 30 with the electrostatic chuck 24.

[0095] In a state where the substrate S is adsorbed by the electrostatic chuck 24, the control device 32 lowers the electrostatic chuck 24 to which the substrate S is adsorbed in order to measure the relative displacement of the substrate S with respect to the mask M.

[0096] When the substrate S descends to the alignment measurement position, the alignment camera 20 photographs the alignment marks formed on the substrate S and the mask M to measure the relative displacement between the substrate S and the mask M.

[0097] If it is determined as a result of the measurement that the relative displacement of the substrate S with respect to the mask M exceeds the threshold value, the substrate S adsorbed by the electrostatic chuck 24 is moved in the horizontal direction (XYθ direction) by the position adjustment mechanism 29, and the substrate S is position-adjusted (aligned) with respect to the mask M. Such a process of relative position adjustment of the substrate S with respect to the mask M can be repeated until the relative displacement falls within the threshold value.

[0098] When the relative positional deviation between the substrate S and the mask M is within a predetermined threshold value, the electrostatic chuck 24 is lowered toward the mask M to bring the substrate S and the mask M into close contact (close contact step). At this time, in order to bring the substrate S and the mask M into close contact, a voltage capable of adsorbing the mask M through the substrate S may be applied to the electrostatic chuck 24, or the magnet plate 31 may be lowered onto the upper surface of the electrostatic chuck 24 to attract the metal mask M onto the substrate S.

[0099] Subsequently, the shutter of the evaporation source 25 is opened, and a vapor deposition material is vapor-deposited on the substrate S through the mask M (film formation step). Here, the case where the vapor deposition material is evaporated or sublimated and vapor-deposited on the substrate S has been described, but the present invention is not limited thereto, and for example, film formation may be performed by other film formation methods such as sputtering.

[0100] After vapor deposition to a desired thickness, the substrate S and the mask M are separated.

[0101] The hand of the transfer robot 14 enters the vacuum chamber 21 of the film forming apparatus 11, a voltage of zero (0) or reverse polarity is applied to the electrode portion of the electrostatic chuck 24, and the electrostatic chuck 24 is separated from the substrate S and rises. Thereafter, the substrate S on which vapor deposition has been completed is carried out of the vacuum chamber 21 by the transfer robot 14.

[0102] In the above description, the film forming apparatus 11 has a configuration of a so-called upward vapor deposition method (depo-up) in which film formation is performed with the film formation surface of the substrate S facing vertically downward, but the present invention is not limited thereto, and the substrate S may be arranged in a state where it is vertically erected on the side surface of the vacuum chamber 21, and film formation may be performed with the film formation surface of the substrate S parallel to the gravitational direction.

[0103] <Method for manufacturing an electronic device> Next, an example of a method for manufacturing an electronic device using the film forming apparatus of the present embodiment will be described. Hereinafter, the configuration and manufacturing method of an organic EL display device will be exemplified as an example of the electronic device.

[0104] First, the organic EL display device to be manufactured will be described. FIG. 6(a) is an overall view of the organic EL display device 60, and FIG. 6(b) shows the cross-sectional structure of one pixel.

[0105] As shown in FIG. 6(a), in the display area 61 of the organic EL display device 60, a plurality of pixels 62 each including a light-emitting element are arranged in a matrix. Although details will be described later, each of the light-emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. Here, the pixel refers to the minimum unit that enables display of a desired color in the display area 61. In the case of the organic EL display device according to this embodiment, the pixel 62 is composed of a combination of a first light-emitting element 62R, a second light-emitting element 62G, and a third light-emitting element 62B that emit different lights. The pixel 62 is often composed of a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but may also be composed of a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and is not particularly limited as long as it is at least one color or more. Further, each light-emitting element may be configured by laminating a plurality of light-emitting layers.

[0106] Alternatively, the pixel 62 may be composed of a plurality of light-emitting elements that emit the same light, and one pixel may be capable of displaying a desired color in the display area 61 by using a color filter in which a plurality of different color conversion elements are arranged in a pattern so as to correspond to each light-emitting element. For example, the pixel 62 may be composed of at least three white light-emitting elements, and a color filter in which red, green, and blue color conversion elements are arranged may be used so as to correspond to each light-emitting element. Or, the pixel 62 may be composed of at least three blue light-emitting elements, and a color filter in which red, green, and colorless color conversion elements are arranged may be used so as to correspond to each light-emitting element. In the latter case, by using a quantum dot color filter (QD-CF) using a quantum dot (Quantum Dot: QD) material as the material constituting the color filter, the display color gamut can be made wider than that of a normal organic EL display device that does not use a quantum dot color filter.

[0107] FIG. 6(b) is a partial cross-sectional schematic view taken along line A-B of FIG. 6(a). Pixel 62 has an organic EL element on substrate S, which includes anode 64, hole transport layer 65, one of light-emitting layers 66R, 66G, 66B, electron transport layer 67, and cathode 68. Among these, hole transport layer 65, light-emitting layers 66R, 66G, 66B, and electron transport layer 67 correspond to organic layers. Also, in this embodiment, light-emitting layer 66R is an organic EL layer that emits red light, light-emitting layer 66G is an organic EL layer that emits green light, and light-emitting layer 66B is an organic EL layer that emits blue light. Note that when using a color filter or a quantum dot color filter as described above, the color filter or the quantum dot color filter is disposed on the light-emitting side of each light-emitting layer, that is, on the upper or lower part of FIG. 6(b), but the illustration is omitted.

[0108] Light-emitting layers 66R, 66G, 66B are formed in patterns corresponding to light-emitting elements (sometimes described as organic EL elements) that emit red, green, and blue light, respectively. Also, anode 64 is formed separately for each light-emitting element. Hole transport layer 65, electron transport layer 67, and cathode 68 may be formed in common with a plurality of light-emitting elements 62R, 62G, 62B, or may be formed for each light-emitting element. Note that in order to prevent anode 64 and cathode 68 from being short-circuited by foreign matter, insulating layer 69 is provided between anodes 64. Further, since the organic EL layer deteriorates due to moisture and oxygen, protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.

[0109] In FIG. 6(b), hole transport layer 65 and electron transport layer 67 are shown as one layer, but depending on the structure of the organic EL display element, they may be formed of a plurality of layers including a hole blocking layer and an electron blocking layer. Also, a hole injection layer having an energy band structure that can smoothly inject holes from anode 64 to hole transport layer 65 can be formed between anode 64 and hole transport layer 65. Similarly, an electron injection layer can be formed between cathode 68 and electron transport layer 67.

[0110] Next, an example of a method for manufacturing an organic EL display device will be specifically described.

[0111] First, prepare a substrate S on which a circuit (not shown) for driving the organic EL display device and an anode 64 are formed.

[0112] Acrylic resin is formed on the substrate S on which the anode 64 is formed by spin coating, and the acrylic resin is patterned by a lithography method so that an opening is formed in the portion where the anode 64 is formed to form an insulating layer 69. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0113] The substrate S on which the insulating layer 69 is patterned is carried into a first organic material film-forming apparatus, the substrate S is held by an electrostatic chuck, and a hole transport layer 65 is formed as a common layer on the anode 64 in the display region. The hole transport layer 65 is formed by vacuum evaporation. Actually, since the hole transport layer 65 is formed in a size larger than that of the display region 61, a high-definition mask M is not required.

[0114] Next, the substrate S on which the hole transport layer 65 is formed is carried into a second organic material film-forming apparatus and held by an electrostatic chuck. Alignment between the substrate S and the mask M is performed, and after the substrate S and the mask M are brought into close contact with each other, a light-emitting layer 66R that emits red light is formed on the portion of the substrate S where the element that emits red light is arranged.

[0115] In the same manner as the formation of the light-emitting layer 66R, a light-emitting layer 66G that emits green light is formed by a third organic material film-forming apparatus, and further, a light-emitting layer 66B that emits blue light is formed by a fourth organic material film-forming apparatus. After the formation of the light-emitting layers 66R, 66G, and 66B is completed, an electron transport layer 67 is formed over the entire display region 61 by a fifth film-forming apparatus. The electron transport layer 67 is formed as a common layer for the three-color light-emitting layers 66R, 66G, and 66B.

[0116] The substrate on which the electron transport layer 67 is formed is moved by a metallic vapor deposition material film-forming apparatus to form a cathode 68.

[0117] According to the present invention, before the substrate is adsorbed and held by the electrostatic chuck 24, the pressing member 30 presses the corner portions of the upper surface of the substrate S to reduce the deflection of the central portion of the substrate S.

[0118] Thereafter, it is moved to a plasma CVD apparatus to form a protective layer 70, and the organic EL display device 60 is completed.

[0119] From the time when the substrate S on which the insulating layer 69 is patterned is carried into the film forming apparatus until the film formation of the protective layer 70 is completed, if it is exposed to an atmosphere containing moisture or oxygen, the light emitting layer made of an organic EL material may be deteriorated by moisture or oxygen. Therefore, in this example, the loading and unloading of the substrate between the film forming apparatuses are performed under a vacuum atmosphere or an inert gas atmosphere.

[0120] The above embodiment shows an example of the present invention, and the present invention is not limited to the configuration of the above embodiment, and may be appropriately modified within the scope of its technical idea.

Explanation of Reference Numerals

[0121] 11: Film forming apparatus, 21: Vacuum container, 22: Substrate support unit, 23: Mask support unit, 24: Electrostatic chuck, 24a: Hole, 24b: Block member, 27: Distance adjustment unit, 30: Pressing member, 31: Magnet plate, 32: Control device, 110: Adsorption device, 300: Substrate pressing mechanism

Claims

1. A support unit that supports a peripheral portion of the first main surface of an object to be adsorbed, the object to be adsorbed having a first main surface and a second main surface opposite to the first main surface; Adsorbing means for adsorbing the object to be adsorbed from the second main surface side of the object to be adsorbed; A plurality of pressing members provided on the adsorbing means for pressing the object to be adsorbed from the second main surface side of the object to be adsorbed; The plurality of pressing members are respectively arranged at positions corresponding to at least two corners among the plurality of corners of the second main surface of the object to be adsorbed. An adsorption device characterized by the above.

2. A support unit that supports a peripheral portion of the first main surface of an object to be adsorbed, the object to be adsorbed having a first main surface and a second main surface opposite to the first main surface; Adsorbing means for adsorbing the object to be adsorbed from the second main surface side of the object to be adsorbed; A pressing member provided on the adsorbing means for pressing the object to be adsorbed from the second main surface side of the object to be adsorbed before the adsorbing means adsorbs the object to be adsorbed; A support region which is a region on the first main surface where the support unit supports the object to be adsorbed, and a pressing region which is a region on the second main surface where the pressing member presses the object to be adsorbed do not overlap when viewed from a direction perpendicular to the first main surface or the second main surface. The pressing member is arranged at a position corresponding to a corner of the second main surface of the object to be adsorbed. An adsorption device characterized by the above.

3. The adsorbing means Comprises an adsorbing body pressing mechanism having a drive source that generates rotation for moving the pressing member in the vertical direction, a transmission mechanism that transmits the rotation, a conversion unit that converts the rotation transmitted by the transmission mechanism into translational movement, and the pressing member. The adsorption device according to claim 1 or 2, characterized in that the pressing member moves in the vertical direction based on the translational movement converted by the conversion unit.

4. The drive source generates rotation in a first direction for moving the pressing member vertically downward. The adsorption device according to claim 3, characterized in that the pressing member moves vertically downward based on the rotation in the first direction transmitted by the transmission mechanism, so that an end portion of the pressing member protrudes from an adsorption surface of the adsorbing means that adsorbs the second main surface side of the object to be adsorbed.

5. The drive source generates rotation in a second direction for moving the pressing member vertically upward. The adsorption device according to claim 4, wherein the pressing member moves vertically upward based on the rotation in the second direction transmitted by the transmission mechanism, so that the end portion of the pressing member protruding from the adsorption surface of the adsorption means retracts from the adsorption surface of the adsorption means.

6. Detection means provided at an end portion of the pressing member for detecting contact with the second main surface of the object to be adsorbed; Control means for controlling the rotational speed and rotational direction of the drive source based on detection information detected by the detection means; and The control means is By controlling the rotational speed, the vertical movement amount of the pressing member is controlled, The adsorption device according to claim 3, wherein by controlling the rotational direction, the movement of the pressing member upward or downward in the vertical direction is controlled.

7. The adsorption device further comprises distance adjustment means for raising the object to be adsorbed supported by the support unit toward the adsorption means to adjust the distance between the object to be adsorbed supported by the support unit and the adsorption means. The pressing member presses the second main surface of the object to be adsorbed adjusted by the distance adjustment means, according to the adsorption device described in claim 1 or 2.

8. When adsorbing the object to be adsorbed to the adsorption means, the control means moves the pressing member in the vertical direction within a range of a first movement amount, When peeling the object to be adsorbed from the adsorption means, the control means moves the pressing member in the vertical direction within a range of a second movement amount wider than the range of the first movement amount, according to the adsorption device described in claim 6.

9. The pressing member is arranged at positions corresponding to all the corner portions of the object to be adsorbed, according to the adsorption device described in claim 1 or 2.

10. The object to be adsorbed is rectangular, according to the adsorption device described in claim 1 or 2.

11. The support region, which is the region on the first main surface where the support unit supports the object to be adsorbed, and the pressing region, which is the region on the second main surface where the pressing member presses the object to be adsorbed, do not overlap when viewed from a direction perpendicular to the first main surface or the second main surface, according to the adsorption device described in claim 1.

12. The adsorption means has holes formed at positions corresponding to the positions of the pressing members according to the adsorption device described in claim 1 or 2.

13. The adsorption device according to claim 1 or 2, and a film forming means for forming a film on the first main surface of the adsorbed object adsorbed by the adsorption means, A film forming apparatus comprising the same.

14. An adsorption method in an adsorption device, a step of a support unit supporting a peripheral portion of the first main surface of an adsorbed object having a first main surface and a second main surface opposite to the first main surface; a step of an adsorption means adsorbing the adsorbed object from the second main surface side of the adsorbed object; a plurality of pressing members are provided on the adsorption means, and a step of pressing the adsorbed object from the second main surface side of the adsorbed object, wherein the plurality of pressing members are respectively arranged at positions corresponding to at least two corners among the plurality of corners of the second main surface of the adsorbed object The adsorption method characterized by the above.

15. An adsorption method in an adsorption device, a step of a support unit supporting a peripheral portion of the first main surface of an adsorbed object having a first main surface and a second main surface opposite to the first main surface; a step of an adsorption means adsorbing the adsorbed object from the second main surface side of the adsorbed object; a pressing member is provided on the adsorption means, and a step of pressing the adsorbed object from the second main surface side of the adsorbed object before the adsorption means adsorbs the adsorbed object, a support region which is a region on the first main surface where the support unit supports the adsorbed object and a pressing region which is a region on the second main surface where the pressing member presses the adsorbed object do not overlap when viewed from a direction perpendicular to the first main surface or the second main surface, wherein the pressing member is arranged at a position corresponding to a corner of the second main surface of the adsorbed object The adsorption method characterized by the above.

16. a step of performing the adsorption method according to claim 14 or 15, and a step of forming a film on the first main surface of the adsorbed object adsorbed by the adsorption means. A film forming method characterized by comprising the same.

17. A method for manufacturing an electronic device, characterized by manufacturing the electronic device using the film forming method according to claim 16.

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