Electronic device

Abstract

To provide an electronic device capable of mounting a bridge with high positional accuracy on a wiring layer.SOLUTION: An electronic device 1 includes bridges 31 (31A, 31B) for electrically connecting a plurality of electronic components 20 (20A, 20B, 20C), and a wiring layer 4 having wiring. The bridges 31 (31A, 31B) are metallurgically bonded to the wiring layer 4. The bridges 31 have a bridge wiring 311 for electrically connecting a plurality of electronic components 20 to each other.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to an electronic device.

Background Art

[0002] Patent Document 1 discloses a technique for connecting a plurality of semiconductor chips to each other with an interconnect chip.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Prior Document 1 does not consider the positional accuracy when fixing the bridge.

[0005] An object of the present invention is to provide an electronic device capable of mounting a bridge on a wiring layer with high positional accuracy.

Means for Solving the Problems

[0006] The electronic device according to the present invention includes a bridge that electrically connects a plurality of electronic components and a wiring layer having wiring, and the bridge is metallically bonded to the wiring layer.

Effects of the Invention

[0007] According to the present invention, it is possible to provide an electronic device capable of mounting a bridge on a wiring layer with high positional accuracy.

Brief Description of the Drawings

[0008]

Figure 1

Figure 2

Figure 3

Figure 4A

Figure 4B

Figure 4C

Figure 4D

Figure 4E

Figure 4F

Figure 4G

Figure 4H

Figure 5A

Figure 5B

Figure 5C

Figure 5D

Figure 5E

Figure 5F

Figure 5G

Figure 5H

Figure 5I

Figure 5J

Figure 5K

Figure 5L

Figure 5M

Figure 5N

Figure 5O

Figure 6A

Figure 6B

Figure 6C

Mode for Carrying Out the Invention

[0009] Hereinafter, an electronic device 1 according to an embodiment of the present invention will be described with reference to the drawings.

[0010] First, with reference to FIGS. 1 and 2, an electronic device 1 according to an embodiment will be described. FIG. 1 is a cross-sectional view of an electronic device 1 according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of the electronic device 1 shown in FIG. 1 disassembled. In FIG. 1, reference numerals of detailed components are omitted.

[0011] As shown in FIGS. 1 and 2, the electronic device 1 according to the present embodiment includes an electronic component layer 2, a connection layer 3, and a wiring layer 4 as an RDL (Re - distribution layer) (hereinafter described as the "wiring layer 4"). The electronic device 1 is mounted on a substrate 5.

[0012] The electronic component layer 2 is formed by covering a plurality of electronic components 20, namely a first electronic component 20A, a second electronic component 20B, and a third electronic component 20C, with an insulating layer 21 described later. The electronic component layer 2 processes data by the electronic components 20. Similarly, the electronic component layer 2 stores data and programs. The electronic component layer 2 executes programs. The electronic component layer 2 performs signal processing. The electronic component layer 2 conducts communication. The electronic component layer 2 interfaces with a sensor device.

[0013] In the following description, when it is not necessary to specify the first electronic component 20A, the second electronic component 20B, and the third electronic component 20C, the first electronic component 20A, the second electronic component 20B, and the third electronic component 20C may be simply described as "electronic components 20".

[0014] The connection layer 3 is formed by covering one or more bridges 31 with an insulating layer 30 described later. The connection layer 3 electrically connects the electronic component layer 2 and the wiring layer 4. The connection layer 3 is formed between the electronic component layer 2 and the wiring layer 4. The connection layer 3 may function as a so - called interposer.

[0015] In the present embodiment, as the plurality of bridges 31, there are a first bridge 31A and a second bridge 31B. In the following description, when it is not necessary to specify the first bridge 31A and the second bridge 31B, the first bridge 31A and the second bridge 31B may be simply described as "bridges 31".

[0016] The wiring layer 4 transmits the signals output from the electronic component layer 2. The wiring layer 4 physically supports the electronic component layer 2 and the connection layer 3. The wiring layer 4 supplies electric charges to the electronic component layer and / or the connection layer 3. The wiring layer 4 is disposed on the side opposite to the electronic component layer 2 with respect to the connection layer 3.

[0017] The substrate 5 physically supports the electronic component layer 2, the connection layer 3, and the wiring layer 4. The substrate 5 functions as a wiring board. The substrate 5 is disposed on the side opposite to the electronic component layer 2 and the connection layer 3 with respect to the wiring layer 4. The substrate 5 may be a glass epoxy substrate, or may be one having an insulating layer and a wiring layer provided on a glass base material.

[0018] <Electronic component layer> As shown in FIGS. 1 and 2, the electronic component layer 2 includes a plurality of electronic components 20 and an insulating layer 21. In the present embodiment, the plurality of electronic components 20 include a first electronic component 20A, a second electronic component 20B, and a third electronic component 20C.

[0019] The electronic component 20 processes data. The electronic component 20 stores data and programs. The electronic component 20 executes programs. The electronic component 20 performs signal processing. The electronic component 20 performs communication. The electronic component 20 interfaces with a sensor device. Each electronic component 20 may execute different functions. The electronic component 20 is, for example, a logic IC. The electronic component 20 may be, for example, a SoC (System on a chip). The electronic component 20 may include a memory IC. The electronic component may be, for example, DDR (Double Data Rate), LPDDR (Low-Power Double Data Rate), HBM (High Bandwidth Memory).

[0020] The electronic components 20 may be arranged side by side so that a plurality of the electronic components 20 are adjacent to each other. That is, in the electronic component layer 2, the first electronic component 20A, the second electronic component 20B, and the third electronic component 20C may be arranged side by side. Note that the plurality of electronic components 20 is not limited to three. The plurality of electronic components may be two, or may be three or more, or four or more.

[0021] More specifically, the first electronic component 20A and the second electronic component 20B may be arranged side by side so as to be adjacent to each other. The second electronic component 20B and the third electronic component 20C may be arranged side by side so as to be adjacent to each other. Hereinafter, the description regarding the first electronic component 20A and the second electronic component 20B adjacent to each other is applicable to the nth electronic component and the (n + 1)th electronic component adjacent to each other without special notice. Here, n is a natural number.

[0022] By having a plurality of electronic components 20, the electronic device 1 can process more information and exhibit more functions than when there is one electronic component 20. For example, if there are three or more electronic components 20, more information can be processed and more functions can be exhibited.

[0023] An integrated circuit (IC) is formed in the electronic component 20. A specific example of the plurality of electronic components 20 is an IC chip (semiconductor chip). Semiconductor elements are arranged at high density in the IC chip. The IC chip has, as an example, a chip substrate (not shown), transistors, chip wiring, and a chip insulating layer.

[0024] The chip substrate is the substrate of the IC chip. A transistor functions as an electronic switch and controls current according to changes in voltage. An example of a transistor is a MOSFET (Metal-Oxide-Semiconductor Field-effect Transistor). Chip wiring is an electronic path for transmitting signals between transistors and other components. Chip wiring is formed, for example, with a fine pattern using a conductive metal (such as aluminum or copper) as the material. The chip insulating layer suppresses shorts between the chip substrate, transistors, and chip wiring.

[0025] The insulating layer 21 seals the periphery of the electronic component 20 including the transistor. The insulating layer 21 is, for example, an organic insulating layer such as an epoxy resin. The organic insulating layer may contain inorganic particles such as silica or alumina. The inclusion of inorganic particles makes it possible to control the coefficient of linear expansion and elastic modulus. The insulating layer 21 may be a molding resin. For example, the insulating layer 21 can be formed by a transfer mold in which a pellet-shaped material is heated and softened in a plunger and then the resin is pushed into a mold, cooled, and solidified. It can also be formed by a compression mold in which a liquid or granular molding resin is previously supplied into an open mold and the mold is closed and heated and pressure-molded. The insulating layer 21 may be formed by laminating and heat-curing a build-up resin film.

[0026] The electronic component 20 has a first opposing portion 200 and an electronic component side electrode 201. Bump electrodes 202 and 203 are formed on the electronic component side electrode 201.

[0027] The first opposing portion 200 faces the bridge 31. Specifically, the first opposing portion 200 faces the bridge 31 through the insulating layer 21 of the electronic component layer 2. The first opposing portion 200 may be a surface facing the bridge 31. Specifically, the first opposing portion 200 may be a surface facing the bridge 31 through the insulating layer 21 of the electronic component layer 2. The first opposing portion 200 may be the lower surface of the electronic component 20 when the electronic device 1 shown in FIG. 1 is placed on a horizontal plane.

[0028] The electronic component side electrode 201 is an input / output terminal for current and signals input / output to / from the electronic component 20. The electronic component side electrode 201 is formed on the first opposing portion 200. The electronic component side electrode 201 is formed of, for example, copper, a copper-aluminum alloy, tin, a tin-silver alloy, a tin-copper-silver alloy, or a laminate or mixture thereof. The electronic component side electrode 201 is electrically connected to the pillar 32 of the connection layer 3 described later via the bump electrode 202. The electronic component side electrode 201 is electrically connected to the bridge 31 of the connection layer 3 described later via the bump electrode 203.

[0029] The bump electrode 202 and the bump electrode 203 are formed on the electronic component side electrode 201. The bump electrode 202 and the bump electrode 203 are formed of, for example, solder. The bump electrode 202 and the bump electrode 203 may be formed of copper, silver, gold, tin, or an alloy thereof. Other bump electrodes described in this embodiment may also be formed of the same material.

[0030] The connection layer 3 includes an insulating layer 30, a bridge 31, and a pillar 32 as a connection layer through electrode.

[0031] The insulating layer 30 seals the periphery of the bridge 31. The insulating layer 30 is, for example, an organic insulating layer such as an epoxy resin. The organic insulating layer may contain inorganic particles such as silica and alumina. By containing the inorganic particles, it becomes possible to control the coefficient of linear expansion and the elastic modulus. The insulating layer 30 may be a molding resin. For example, the insulating layer 30 can be formed by a transfer mold in which a pellet-shaped material is heated and softened in a plunger, and then the resin is pushed into a mold, cooled, and solidified. Also, it can be formed by a compression mold in which a liquid or granular molding resin is previously supplied into an open mold, and the mold is closed and heated and pressure-molded. The insulating layer 30 may be formed by laminating and heat-curing a build-up resin film.

[0032] The bridge 31 is electrically connected to the electronic component 20. There may be two or more bridges 31. In the present embodiment, as a plurality of bridges 31, there are a first bridge 31A and a second bridge 31B. The plurality of bridges may be three or more.

[0033] According to the present embodiment, the electronic device 1 can process more information than when there is one bridge 31.

[0034] The bridge 31 electrically connects a plurality of adjacent electronic components 20 to each other. That is, the first bridge 31A (the nth bridge) electrically connects the first electronic component 20A (the nth electronic component) and the second electronic component 20B (the (n + 1)th electronic component) adjacent to each other. Further, the second bridge 31B (the (n + 1)th bridge) may electrically connect the second electronic component 20B (the (n + 1)th electronic component) and the third electronic component 20C (the (n + 2)th electronic component) adjacent to each other.

[0035] The pillar 32 penetrates from the opposing portion 33 facing the electronic component layer 2 to the opposing portion 34 facing the wiring layer 4 in the connection layer 3, and electrically connects the electronic component 20 and the wiring of the wiring layer 4. The pillar 32 is formed in the insulating layer 30.

[0036] Pillar 32 directly electrically connects the electronic component layer 2 and the wiring layer 4. The pillar 32 is formed to stand upright penetrating from the surface (opposing portion 33) facing the electronic component layer 2 to the surface (opposing portion 34) facing the wiring layer 4 of the insulating layer 30. The pillar 32 is formed in a cylindrical shape and a cavity is formed. A conductor is formed on the inner peripheral surface of the cavity. The cavity may be filled with a conductor. An example of the conductor is copper formed by an electroplating method.

[0037] The pillar 32 has an exposed portion as the surface exposed on the opposing portion 34 on the wiring layer 4 side. When the connection layer 3 and the wiring layer 4 are joined, the exposed portion of the pillar 32 on the wiring layer 4 side is electrically connected to the third layer line wiring 46 formed on the fourth opposing portion 40 of the wiring layer 4 described later.

[0038] The pillar 32 has an exposed portion as the surface exposed on the opposing portion 33 on the electronic component layer 2 side. The exposed portion of the pillar 32 on the electronic component layer 2 side may be covered by the pillar electrode 320. The pillar electrode 320 is, for example, a conductive thin film. The pillar electrode 320 is formed of copper as an example. Note that, without providing a conductive thin film, the exposed portion of the pillar 32 on the electronic component layer 2 side may be used as the pillar electrode 320. In the manufacturing process of the electronic device 1, when the electronic component layer 2 is joined to the connection layer 3, the pillar electrode 320 of the connection layer 3 is electrically connected to the bump electrode 202 of the electronic component layer 2. The pillar 32 is used, for example, as a power line or a ground line of the electronic component 20.

[0039] The bridge 31 has a glass substrate 310, a bridge wiring 311 and a bridge insulating layer 312 constituting the bridge wiring portion, a second opposing portion 313, a third opposing portion 314, and a bridge through via 315 as a bridge through electrode. The bridge 31 further has a bridge side first electrode 316 and a bridge side second electrode 317.

[0040] The bridge 31 is formed of a glass substrate 310. As for the glass substrate 310, it is preferable to use an alkali-free glass or quartz glass that does not contain an alkali component from the viewpoint of electrical reliability. Also, as the glass substrate 310, it is also preferable to select one having an appropriate value of the linear expansion coefficient and elastic modulus from the viewpoint of reliability in relation to the physical properties of the electronic component layer 2, the connection layer 3, the wiring layer 4, and the substrate 5.

[0041] The relative permittivity of silicon is, for example, 12. The relative permittivity of alkali-free glass is, for example, 5.8. For example, the relative permittivity of quartz glass is 3.9. The dielectric loss is proportional to the relative permittivity. Therefore, the larger the relative permittivity, the larger the dielectric loss. Accordingly, the bridge 31 that electrically connects the plurality of electronic components 20 can suppress the dielectric loss when formed of the glass substrate 310 as compared with the case where it is formed of silicon.

[0042] The dielectric loss affects, for example, signal attenuation, bandwidth limitation, delay increase, signal distortion, etc. in the information transmission between the plurality of electronic components 20.

[0043] The dielectric loss absorbs and attenuates the energy of the signal. As a result, the signal weakens as it travels through the wiring, and the signal quality deteriorates. Signal attenuation is a factor that limits the information transmission distance.

[0044] In a wiring with a high dielectric loss, the frequency components of the signal attenuate faster. Therefore, the bandwidth may be limited. In a wiring with a high dielectric loss, high-frequency signals are likely to deteriorate in the transmission path, which may affect high-speed data communication.

[0045] In a wiring with a large dielectric loss, the transmission speed of the signal may become slow. This is because it takes time to replenish the energy absorbed by the signal in the wiring. When the signal delay increases, the communication reliability decreases.

[0046] Due to the dielectric loss, the signal may be distorted during transmission. A large dielectric loss affects the amplitude, phase, and waveform of the signal, impairing the accuracy of the signal.

[0047] The bridge wiring 311 electrically connects a plurality of electronic devices 1 to each other. The bridge wiring 311 is, for example, a copper wiring.

[0048] According to the present embodiment, the exchange of power and information between a plurality of electronic components 20 arranged in the electronic component layer 2 can be directly performed via the bridge wiring 311.

[0049] The bridge insulating layer 312 insulates the bridge wiring 311.

[0050] By having the bridge insulating layer 312, it is possible to suppress the occurrence of a short circuit between a plurality of bridge wirings 311 and the occurrence of a short circuit between the bridge wiring 311 and the bridge through-via 315.

[0051] The bridge insulating layer 312 seals the bridge wiring 311. The bridge insulating layer 312 is formed on the electronic component layer 2 side of the glass substrate 310, that is, in the vicinity of the second facing portion 313.

[0052] In the present embodiment, a plurality of bridge insulating layers 312 are laminated so as to sandwich the bridge wiring 311. Note that the bridge wiring portion may be formed in a multilayer wiring structure having a plurality of layers of bridge wirings 311. In the multilayer wiring structure, there are a plurality of layers of bridge insulating layers 312 and a plurality of layers of bridge wirings 311, and the bridge insulating layers 312 and the bridge wirings 311 are alternately laminated. Thereby, signal transmission can be performed between a plurality of electronic components 20 using a large number of wirings. Therefore, the density of the electronic components 20 and the wiring can be improved. Note that the bridge wiring 311 may be directly disposed on the glass substrate 310. Also, the bridge wiring 311 may be disposed on the outermost surface of the bridge 31.

[0053] Note that the bridge wiring portion formed by the bridge insulating layer 312 and the bridge wiring 311 may also be formed on the wiring layer 4 side of the glass substrate 310, that is, near the third facing portion 314. In this case, a via is formed in the bridge 31, and the bridge-side first electrode 316 formed on the second facing portion 313 of the bridge 31 is electrically connected to the bridge wiring 311 formed near the third facing portion 314. Also by this, the density of the electronic component 20 and the wiring can be improved.

[0054] The bridge insulating layer 312 may be an organic insulating layer. As an example, the bridge insulating layer 312 may be a resin material such as a polyimide resin as a photosensitive resin material. The organic insulating layer formed of a resin material generally has a low relative permittivity. Therefore, by using an organic insulating layer as the bridge insulating layer 312, dielectric loss can be further suppressed. Also, by using an organic insulating layer, it is possible to thicken the bridge insulating layer 312 as the bridge wiring 311 is thickened, and even in this case, the manufacturing cost can be suppressed. Thickening the bridge wiring 311 is effective in reducing the conductor resistance of the wiring. The organic insulating layer is formed, for example, by spin coating. The relative permittivity of the organic insulating layer may be lower than the relative permittivity of silicon. The relative permittivity of the organic insulating layer may be lower than the relative permittivity of the glass material constituting the glass substrate 310. The relative permittivity of the organic insulating layer is preferably, for example, 10 or less, and more preferably 5 or less.

[0055] The bridge insulating layer 312 may be an inorganic insulating layer. As an example, the bridge insulating layer 312 may be silicon dioxide (SiO 2 )). An inorganic insulating layer such as silicon dioxide is formed, for example, by chemical vapor deposition (CVD: Chemical Vapor Deposition).

[0056] The second opposing portion 313 of the bridge 31 faces the first opposing portion 200 of each of the plurality of electronic components 20. That is, the second opposing portion 313 faces the first opposing portion 200 of each of the first electronic component 20A, the second electronic component 20B, and the third electronic component 20C. The second opposing portion 313 may be the upper surface of the bridge 31 when the electronic device 1 shown in FIG. 1 is placed on a horizontal plane.

[0057] The first opposing portion 200 and the second opposing portion 313 are electrically connected. Specifically, the first opposing portion 200 of the first electronic component 20A is electrically connected to the bridge-side first electrode 316 formed on the second opposing portion 313 of the bridge 31 via the bump electrode 203. The first opposing portion 200 of the second electronic component 20B is electrically connected to the bridge-side first electrode 316 formed on the second opposing portion 313 of the bridge 31 via the bump electrode 203. Note that the first opposing portion 200 of the first electronic component 20A is electrically connected to the pillar electrode 320 formed on the opposing portion 33 on the electronic component layer 2 side of the connection layer 3 via the bump electrode 202.

[0058] The third opposing portion 314 of the bridge 31 is formed on the side opposite to the second opposing portion 313 of the bridge 31 with respect to the bridge 31. The third opposing portion 314 faces the wiring layer 4. Specifically, the third opposing portion 314 faces the wiring layer 4 via the insulating layer 30. The third opposing portion 314 may be the lower surface of the bridge 31 when the electronic device 1 shown in FIG. 1 is placed on a horizontal plane.

[0059] More specifically, when the electronic device 1 according to the present embodiment is placed on a horizontal plane, the bridge wiring 311 is formed to extend horizontally inside the bridge insulating layer 312, and further bends toward the electronic component 20 side of the electronic component layer 2 at both horizontal ends and extends until it appears on the second opposing portion 313. Here, the horizontal direction is a direction parallel to the surface of the second opposing portion 313.

[0060] In other words, when the electronic device 1 according to the present embodiment is placed on a horizontal plane, the bridge wiring 311 is formed to extend from the lower part in the vertical direction of the first electronic component 20A to the lower part in the vertical direction of the second electronic component 20B inside the bridge insulating layer 312. The bridge wiring 311 is bent at the end on the first electronic component 20A side and extends until it appears at the second opposing portion 313. The bridge wiring 311 is bent at the end on the second electronic component 20B side and extends until it appears at the second opposing portion 313.

[0061] The current and information output from the first electronic component 20A are transmitted from the bump electrode 203 of the electronic component side electrode 201 to the bridge wiring 311 through the bridge electrode 3160 of the bridge side first electrode 316 formed on the first electronic component 20A side of the bridge 31. The second electronic component 20B receives the current and information transmitted to the bridge wiring 311 from the bridge electrode 3160 of the bridge side first electrode 316 formed on the second electronic component 20B side of the bridge 31 through the bump electrode 203 of the electronic component side electrode 201 of the second electronic component 20B.

[0062] Similarly, the current and information output from the second electronic component 20B are transmitted from the bump electrode 203 of the electronic component side electrode 201 to the bridge wiring 311 through the bridge electrode 3160 of the bridge side first electrode 316 formed on the second electronic component 20B side of the bridge 31. The first electronic component 20A receives the current and information transmitted to the bridge wiring 311 from the bridge electrode 3160 of the bridge side first electrode 316 formed on the first electronic component 20A side of the bridge 31 through the bump electrode 203 of the electronic component side electrode 201 of the first electronic component 20A.

[0063] The bridge through via 315 directly electrically connects the electronic component layer 2 and the wiring layer 4. The bridge through via 315 is formed to penetrate from the second opposing portion 313 facing the electronic component layer 2 to the third opposing portion 314 facing the wiring layer 4. The bridge through via 315 is formed in a cylindrical shape, and a cavity is formed. A conductor is formed on the inner peripheral surface of the cavity. The cavity may be filled with a conductor. An example of the conductor is copper formed by an electroplating method.

[0064] The bridge through via 315 is preferably a linear straight via electrode that penetrates from the second opposing portion 313 to the third opposing portion 314. That is, the bridge through via 315 is preferably a straight via electrode that linearly penetrates the glass substrate 310 and the bridge insulating layer 312. Thereby, the wiring length when electrically connecting the electronic component 20 and the wiring layer 4 via the bridge 31 can be shortened. This configuration is particularly effective when an HBM is used as the electronic component 20. In the HBM, the contacts of the signal lines are densely arranged, and the contacts of the power supply line and the ground line are also arranged in the vicinity of that portion. Even in such a case, the bridge wiring 311 is used as a signal line to electrically connect a plurality of electronic components 20 to each other with a short wiring length, and the bridge through via 315 is used as a power supply line or a ground line to electrically connect the electronic component 20 and the wiring layer 4 with a short wiring length.

[0065] A first bridge-side electrode 316 is formed on the second opposing portion 313. That is, the first bridge-side electrode 316 is formed on the second opposing portion 313 of the bridge 31. The first bridge-side electrode 316 is electrically connected to the bump electrode 203 of the electronic component 20 in the electronic component layer 2.

[0066] The first bridge-side electrode 316 includes a bridge electrode 3160 and a via electrode 3161.

[0067] The bridge electrode 3160 is constituted by, for example, a conductive thin film that covers, in a conductive manner, an exposed portion that extends from the bridge wiring 311 sealed in the bridge insulating layer 312 toward the electronic component 20 side and is exposed on the second opposing portion 313. The bridge electrode 3160 is formed of copper, for example. Note that the exposed portion on the second opposing portion 313 side of the bridge wiring 311 may be used as the bridge electrode 3160 without providing a conductive thin film.

[0068] The via electrode 3161 is composed of, for example, a conductive thin film that extends from the bridge through-via 315 to the electronic component 20 side and covers the exposed portion as the surface exposed to the third opposing portion 314. The via electrode 3161 is formed of copper, for example. Note that the exposed portion on the third opposing portion 313 side of the bridge wiring 311 may be used as the via electrode 3161 without providing a conductive thin film.

[0069] A bridge-side second electrode 317 is formed on the third opposing portion 314. That is, the bridge-side second electrode 317 is formed on the third opposing portion 314 of the bridge 31. The bridge-side second electrode 317 is electrically connected to the third layer line wiring 46 of the wiring layer 4.

[0070] The bridge-side second electrode 317 includes a via electrode 3170 and a bump electrode 3171.

[0071] The via electrode 3170 is composed of, for example, a conductive thin film that extends from the bridge through-via 315 to the wiring layer 4 side and covers the exposed portion as the surface exposed to the third opposing portion 314. The via electrode 3170 is formed of copper, for example. Note that the exposed portion on the third opposing portion 314 side of the bridge wiring 311 may be used as the via electrode 3170 without providing a conductive thin film.

[0072] A bump electrode 3171 is formed on the via electrode 3170.

[0073] <Wiring layer> The wiring layer 4 has a fourth opposing portion 40, a fifth opposing portion 41, a first layer line wiring 42, a first insulating layer 43, a second layer line wiring 44, a second insulating layer 45, a third layer line wiring 46, a first layer via wiring 47, a second layer via wiring 48, and a bump electrode 49.

[0074] The fourth opposing portion 40 faces the third opposing portion 314 of the bridge 31. Specifically, the fourth opposing portion 40 faces the bridge 31 through the insulating layer 30 of the connection layer 3. The fourth opposing portion 40 may be a surface facing the bridge 31. The fourth opposing portion 40 may be a surface facing the bridge 31 through the insulating layer 30 of the connection layer 3. The fourth opposing portion 40 may be the upper surface of the wiring layer 4 when the electronic device 1 shown in FIG. 1 is placed on a horizontal plane.

[0075] The fourth opposing portion 40 of the wiring layer 4 and the third opposing portion 314 of the bridge 31 of the connection layer 3 are electrically connected. Specifically, the third-layer line wiring 46 of the fourth opposing portion 40 of the wiring layer 4 is electrically connected to the via electrode 3170 formed on the bridge 31 of the connection layer 3. The via electrode 3170 of the bridge-side second electrode 317 formed on the first electronic component 20A side is electrically connected to the third-layer line wiring 46 of the wiring layer 4. The via electrode 3170 of the bridge-side second electrode 317 formed on the second electronic component 20B side is electrically connected to the third-layer line wiring 46 of the wiring layer 4. At this time, by flip-chip mounting, the bridge 31 is metal-bonded to the wiring layer 4. Thereby, the bridge 31 can be mounted with very high positioning accuracy.

[0076] The fifth opposing portion 41 is formed on the side of the wiring layer 4 opposite to the fourth opposing portion 40 of the wiring layer 4. The fifth opposing portion 41 faces the substrate 5. Specifically, the fifth opposing portion 41 faces the substrate 5 through the bump electrode 49 formed on the fifth opposing portion 41. The fifth opposing portion 41 may be the lower surface of the wiring layer 4 when the electronic device 1 shown in FIG. 1 is placed on a horizontal plane.

[0077] The first-layer line wiring 42 is formed on the fifth opposing portion 41 of the wiring layer 4. The first-layer line wiring 42 may be formed of copper wiring, for example.

[0078] The first insulating layer 43 insulates the first layer line wiring 42, the first layer via wiring 47, and the second layer line wiring 44. The first insulating layer 43 is formed above the first layer line wiring 42 when the electronic device 1 shown in FIG. 1 is placed on a horizontal plane. The first insulating layer 43 can be formed of a resin such as polyimide, polybenzoxazole, or benzocyclobutene, for example. When these resins have a photosensitive function, a via (opening) can be provided by photolithography and filled with a conductive material such as metal, thereby electrically connecting the wiring layers formed above and below the resin material. When the resin material is not photosensitive, via openings can also be formed by laser light irradiation or dry etching.

[0079] The second layer line wiring 44 is laminated on the opposite side of the first layer line wiring 42 in the first insulating layer 43. The second layer line wiring 44 is formed in the electronic device 1 according to the present embodiment to improve the density of the electronic components 20 and the wiring when a plurality of electronic components 20 are mounted. The second layer line wiring 44 is laminated above the first insulating layer 43 when the electronic device 1 shown in FIG. 1 is placed on a horizontal plane. The second layer line wiring 44 can be formed of the same composition as the first layer line wiring 42.

[0080] The second insulating layer 45 insulates the second layer line wiring 44, the second layer via wiring 48, and the third layer line wiring 46. The second insulating layer 45 is laminated above the second layer line wiring 44 when the electronic device 1 shown in FIG. 1 is placed on a horizontal plane. The second insulating layer 45 can be formed of the same composition as the first insulating layer 43.

[0081] The third-layer line wiring 46 is formed in the fourth opposing portion 40 of the wiring layer 4. When the connection layer 3 and the wiring layer 4 are joined, the third-layer line wiring 46 is electrically connected to the exposed portion on the wiring layer 4 side of the pillar 32 formed in the connection layer 3. When the connection layer 3 and the wiring layer 4 are joined, the third-layer line wiring 46 is electrically connected to the bridge-side second electrode 317 of the bridge 31. The third-layer line wiring 46 is laminated on the upper portion of the second insulating layer 45 when the electronic device 1 shown in FIG. 1 is placed on a horizontal plane. The third-layer line wiring 46 can be formed of the same composition as the first-layer line wiring 42 and the second-layer line wiring 44.

[0082] The first-layer via wiring 47 electrically connects the first-layer line wiring 42 and the second-layer line wiring 44. When the electronic device 1 shown in FIG. 1 is placed on a horizontal plane, the first-layer via wiring 47 is formed to extend vertically from the first-layer line wiring 42 to the second-layer line wiring 44.

[0083] The second-layer via wiring 48 electrically connects the second-layer line wiring 44 and the third-layer line wiring 46. When the electronic device 1 shown in FIG. 1 is placed on a horizontal plane, the second-layer via wiring 48 is formed to extend vertically from the second-layer line wiring 44 to the third-layer line wiring 46.

[0084] The bump electrode 49 electrically connects the wiring layer 4 and the substrate 5. When the wiring layer 4 and the substrate 5 are coupled, the bump electrode 49 electrically connects the first-layer line wiring 42 of the wiring layer 4 and wiring (not shown) of the substrate 5. The bump electrode 49 is formed in the fifth opposing portion 41.

[0085] <Superposition of Electronic Component and Bridge> Next, in addition to FIGS. 1 and 2, referring to FIG. 3, the electronic device 1 according to the present embodiment will be continuously described. FIG. 3 is an external view of the electronic device 1 according to the present embodiment as viewed from above.

[0086] FIG. 3 shows a first electronic component 20A, a second electronic component 20B, a third electronic component 20C, a first bridge 31A, and a second bridge 31B included in the electronic device 1 according to the present embodiment.

[0087] As shown in FIG. 3, when the electronic device 1 according to the present embodiment is placed on a horizontal plane and the electronic component layer 2 and the connection layer 3 are viewed in the stacking direction, the bridge 31 is arranged so as to overlap each of the plurality of electronic components 20.

[0088] According to the present embodiment, the electronic components 20 can be densely arranged in the electronic component layer 2. Therefore, in the electronic device 1 having a specified size, the amount of information that the electronic components 20 can process can be increased.

[0089] In other words, when the electronic device 1 according to the present embodiment is placed on a horizontal plane and viewed from above in the vertical direction, a part of the first electronic component 20A and a part of the first bridge 31A overlap. Similarly, a part of the second electronic component 20B and a part of the first bridge 31A overlap. Similarly, a part of the second electronic component 20B and a part of the second bridge 31B overlap. Similarly, a part of the third electronic component 20C and a part of the second bridge 31B overlap.

[0090] More specifically, as shown in FIG. 2, when the electronic device 1 according to the present embodiment is placed on a horizontal plane and viewed from above in the vertical direction, the electronic component side electrode 201 of the first electronic component 20A and the bridge side first electrode 316 of the first bridge 31A overlap. Similarly, the electronic component side electrode 201 of the second electronic component 20B and the bridge side first electrode 316 of the first bridge 31A overlap. Similarly, the electronic component side electrode 201 of the second electronic component 20B and the bridge side first electrode 316 of the second bridge overlap. Similarly, the electronic component side electrode 201 of the third electronic component 20C and the bridge side first electrode 316 of the second bridge 31B overlap. The same applies hereinafter.

[0091] By configuring in this way, when the electronic component layer 2 and the connection layer 3 are joined as shown in FIG. 1, the bump electrode 203 of the electronic component side electrode 201 of the first electronic component 20A and the bridge electrode 3160 and via electrode 3161 of the bridge side first electrode 316 of the first bridge 31A are electrically connected. Similarly, the bump electrode 203 of the electronic component side electrode 201 of the second electronic component 20B and the bridge electrode 3160 and via electrode 3161 of the bridge side first electrode 316 of the first bridge 31A are electrically connected.

[0092] The bridge 31 may be smaller than any of the plurality of electronic components 20 connected to the bridge. Specifically, the first bridge 31A is smaller than the first electronic component 20A and smaller than the second electronic component 20B. For example, when the electronic device 1 according to the present embodiment is placed on a horizontal plane and the electronic component layer 2 and the connection layer 3 are viewed in the stacking direction, the area of the first bridge 31A is smaller than the area of the first electronic component 20A and the area of the second electronic component 20B. That is, the area of the first bridge 31A in plan view is smaller than either the area of the first electronic component 20A or the area of the second electronic component 20B in plan view.

[0093] According to the present embodiment, since the ratio occupied by the bridge 31 using the glass substrate 310 in the wiring layer 4 can be reduced, an increase in cost can be suppressed.

[0094] <Manufacturing process of the bridge> Next, with reference to FIGS. 4A to 4H, the manufacturing process of the electronic device 1 according to the present embodiment will be described. FIGS. 4A to 4H are diagrams showing the manufacturing process of the bridge 31 of the electronic device 1 according to an embodiment.

[0095] FIG. 4A is a diagram showing a glass substrate preparation step of preparing a glass substrate 310. As shown in FIG. 4A, first, a glass substrate 310 is prepared. The glass substrate 310 is, for example, a glass wafer. In practice, after the process shown in FIG. 4H is completed, it is diced into the chip size of one bridge 31 and chipped. However, in FIGS. 4A to 4H, for the sake of convenience of explanation, a glass substrate 310 having the size of one bridge 31 is shown and explained.

[0096] FIG. 4B is a diagram showing a via filling step of forming a part of a bridge through via 315 by filling a formed through hole with a via after the through hole forming step of forming a through hole in the glass substrate 310. As shown in FIG. 4B, a through hole is formed so as to penetrate from the first main surface 310A to the second main surface 310B (the third opposing portion 314 of the bridge 31) of the glass substrate 310. The through hole is formed, for example, by laser processing. It is also preferable to etch and smooth the surface of the through hole with hydrofluoric acid after laser processing. After forming a seed layer by sputtering film formation, electroless plating, or the like, a metal such as copper is formed thereon by electroplating to perform a conductivity treatment to achieve low resistance. A metal layer may be formed only on the inner wall surface of the through hole, or the entire hole may be filled with metal. Thereby, a via electrode as at least a part of the bridge through via 315 is formed.

[0097] FIG. 4C is a diagram showing an insulating film forming step of forming a bridge insulating layer 312 on the first main surface 310A of the glass substrate 310. As shown in FIG. 4C, a bridge insulating layer 312 is formed on the first main surface 310A of the glass substrate 310. The bridge insulating layer 312 is formed, for example, by forming an organic insulating layer by spin coating. As the organic insulating film layer material, polyimide, polybenzoxazole, benzocyclobutene, or the like can be used. Alternatively, it is formed by forming an inorganic insulating layer such as SiO 2 or the like by CVD or the like.

[0098] FIG. 4D is a diagram showing a bridge wiring forming step of forming a bridge wiring 311 on a bridge insulating layer 312. As shown in FIG. 4D, on the first main surface 310A side of the glass substrate 310, a bridge wiring 311 is further formed on the bridge insulating layer 312. The bridge wiring 311 is formed, for example, by an additive method. As an example, the additive method forms a resist on the bridge insulating layer 312 and then forms the bridge wiring 311 by electroless plating (full additive method). As the bridge wiring 311, for example, a copper wiring is used.

[0099] FIG. 4E is a diagram showing an insulating film forming step of forming a bridge insulating layer 312 on the bridge wiring 311. As shown in FIG. 4E, a bridge insulating layer 312 is further formed on the bridge wiring 311 laminated on the bridge insulating layer 312 to seal the bridge wiring 311 with the bridge insulating layer 312. Note that the steps of FIG. 4D and FIG. 4E may be repeated to form the bridge wiring portion in a multilayer wiring structure having a plurality of layers of bridge wiring 311. In this case, the bridge wiring portion has a plurality of layers of bridge insulating layers 312 and a plurality of layers of bridge wiring 311, and the bridge insulating layers 312 and the bridge wiring 311 are alternately laminated. Thereby, signal transmission can be performed between the plurality of electronic components 20 using a large number of wirings.

[0100] FIG. 4F is a diagram showing a via filling step of forming a via fill in the formed opening after the opening forming step of forming an opening in the bridge insulating layer 312 to form a bridge through via 315. When the resin material constituting the bridge insulating layer 312 has a photosensitive function, a via (opening) is provided by photolithography and filled with a conductive material such as metal. The conductive material is connected to a via electrode (not shown) of the glass substrate 310, thereby forming the bridge through via 315. When the resin material is not photosensitive, a via opening can also be formed by laser light irradiation or dry etching. As an example, after forming a via (opening), first, a seed layer is formed on the inner surface of the via by sputtering. For example, a titanium film is used as the seed layer. Then, the via is filled by electrolytic plating to form the bridge through via 315. The via electrode as the bridge through via 315 is formed of, for example, copper. After that, the surface of the bridge 31 is polished by CMP to remove the extra metal portion formed during the via filling step. The surface on the first main surface 310A side polished by CMP becomes the second opposing portion 313 of the bridge 31. The second main surface 310B of the glass substrate 310 becomes the third opposing portion 314 of the bridge 31.

[0101] FIG. 4G is a diagram showing a bridge wiring forming step. As shown in FIG. 4G, the bridge wiring 311 is additionally formed so that the bridge wiring 311 is exposed from the second opposing portion 313. The wiring formed by this addition is formed by, for example, the damascene method or the semi-additive method. Thereby, the bridge wiring 311 is formed which bends at both horizontal ends and the ends thereof are exposed on the second opposing portion 313.

[0102] FIG. 4H is a diagram showing the bump electrode formation step. As shown in FIG. 4H, a second bridge-side electrode 317 is formed on the third opposing portion 314 side of the bridge through-via 315. That is, a via electrode 3170 as a seed layer is formed on the exposed portion on the third opposing portion 314 side of the bridge through-via 315, and a bump electrode 3171 is further formed on the via electrode 3170. Note that the formation of the seed layer may be omitted. Thereafter, it is cut into chip size by dicing, and the bridge 31 with the bump electrode formed thereon is completed.

[0103] <Lamination process of electronic device> Next, with reference to FIGS. 5A to 5O, the lamination process of the electronic device 1 according to an embodiment will be described. FIGS. 5A to 5O are diagrams showing the lamination process of the electronic device 1 according to an embodiment.

[0104] FIG. 5A is a diagram showing a release layer forming step of forming a release layer 102 on a panel carrier 100 prepared by a panel carrier preparation step. As shown in FIG. 5A, a release layer 102 is formed on the panel carrier 100 serving as a base.

[0105] FIG. 5B is a diagram showing a wiring forming step of forming a first layer line wiring 42 on the release layer 102. As shown in FIG. 5B, a copper layer is formed on the release layer 102 to form the first layer line wiring 42. The patterned first layer line wiring 42 is formed, for example, by a damascene method or a semi-additive method.

[0106] FIG. 5C is a diagram showing a wiring layer forming step of forming a wiring layer 4 on the release layer 102. As shown in FIG. 5C, the wiring layer 4 is laminated on the release layer 102.

[0107] The wiring layer 4 is formed, for example, by laminating a first insulating layer 43, a second layer line wiring 44, a second insulating layer 45, and a third layer line wiring 46 in this order on the first layer line wiring 42. The first layer via wiring 47 may be formed after the first insulating layer 43 is formed. The second layer via wiring 48 may be formed after the second insulating layer 45 is formed.

[0108] FIG. 5D is a diagram showing a bridge mounting step of mounting the bridge 31 on the wiring layer 4. As shown in FIG. 5D, the bridges 31 (the first bridge 31A and the second bridge 31B) manufactured by the steps shown in FIGS. 4A to 4H are mounted on the wiring layer 4. At this time, by flip chip mounting, the bridge 31 is metallically joined to the wiring layer 4. More specifically, the second electrode 317 on the bridge side of the bridge 31 is metallically joined to the contact portion in the third layer line wiring 46 of the wiring layer 4. Thereby, the bridge 31 can be mounted with very high positioning accuracy.

[0109] FIG. 5E is a diagram showing a resist film forming step, which is a part of the pillar forming step. As shown in FIG. 5E, a thick resist film 104 is formed so as to cover the bridges 31 (the first bridge 31A and the second bridge 31B).

[0110] FIG. 5F is a diagram showing a pillar forming step of filling the formed holes with vias to form pillars 32 after the hole forming step of forming holes in the resist film 104. As shown in FIG. 5F, a predetermined portion (contact portion in the third layer line wiring 46) of the resist film 104 is etched to form holes, and then the formed holes are filled with vias by electrolytic plating to form the pillars 32. As an example of the via filling, first, a seed layer is formed on the inner surface of the hole by sputtering. For example, a titanium film is used as the seed layer. Thereafter, via filling is performed by electrolytic plating to form the pillars 32. The metal pillars as the pillars 32 are formed of, for example, copper.

[0111] FIG. 5G is a diagram showing a resist film removing step of removing the resist film 104. As shown in FIG. 5G, the resist film 104 is removed to expose the bridges 31 (the first bridge 31A and the second bridge 31B) and the pillars 32.

[0112] FIG. 5H is a diagram showing a molding step of covering the bridges 31 and the pillars 32 with the insulating layer 30. As shown in FIG. 5H, the bridges 31 (the first bridge 31A and the second bridge 31B) and the pillars 32 are molded with the insulating layer 30.

[0113] FIG. 5I is a diagram showing a grinding process of grinding the surface of the insulating layer 30. As shown in FIG. 5I, the surface of the insulating layer 30 is ground by a grinder or the like to expose the second facing portion 313 of the bridge 31. At this time, the pillar 32 is also ground to form an exposed portion of the pillar 32 on the facing portion 33 side of the electronic component layer 2 of the connection layer 3.

[0114] FIG. 5J is a diagram showing an electrode forming process of forming an electrode by a thin film metal. As shown in FIG. 5J, a bridge electrode 3160 made of a thin film metal is formed on the surface of the bridge wiring 311 exposed on the second facing portion 313 of the bridge 31 (the first bridge 31A and the second bridge 31B), and a via electrode 3161 made of a thin film metal is formed on the surface of the bridge through via 315. Further, a pillar electrode 320 made of a thin film metal is formed on the surface of the pillar 32. However, this process is not necessarily required, and the surfaces of the exposed bridge wiring 311, the bridge through via 315, and the pillar 32 may be used as electrodes as they are. Thereby, the connection layer 3 is formed.

[0115] FIG. 5K is a diagram showing an electronic component mounting process of mounting the electronic component 20 on the connection layer 3. As shown in FIG. 5K, the electronic component 20 (the first electronic component 20A, the second electronic component 20B, and the third electronic component 20C) is mounted on the connection layer 3 so as to overlap a part of the bridge 31 (the first bridge 31A and the second bridge 31B). Specifically, the bump electrodes 203 and 202 of the electronic component 20 (the first electronic component 20A, the second electronic component 20B, and the third electronic component 20C) are joined to the bridge 31 (the first bridge 31A and the second bridge 31B) and the pillar 32. At this time, by flip chip mounting, the electronic component 20 is metallically joined to the connection layer 3. Thereby, the electronic component 20 can be mounted with very high positioning accuracy.

[0116] FIG. 5L is a diagram showing a molding process of covering the electronic component 20 with the insulating layer 21. As shown in FIG. 5L, the electronic component 20 (the first electronic component 20A, the second electronic component 20B, and the third electronic component 20C) is molded with the insulating layer 21.

[0117] FIG. 5M is a diagram showing a grinding process of grinding the surface of the insulating layer 21. As shown in FIG. 5M, the insulating layer 21 is ground by a grinder or the like to expose the surface of the electronic component 20 (the first electronic component 20A, the second electronic component 20B, the third electronic component 20C). This process is not necessarily required, but it is useful when directly forming a heat dissipation structure on the electronic component 20 for heat dissipation.

[0118] FIG. 5N is a diagram showing a panel carrier removing process of removing the panel carrier 100. As shown in FIG. 5N, the panel carrier 100 and the release layer 102 are removed.

[0119] FIG. 5O is a diagram showing a bump electrode forming process of forming a bump electrode 49 on the wiring layer 4. As shown in FIG. 5O, the bump electrode 49 is formed on the first layer line wiring 42 of the wiring layer 4. Thereby, the electronic device 1 is completed. Thereafter, the electronic device 1 is mounted on the substrate 5 using the bump electrode 49.

[0120] Next, FIGS. 6A to 6C show a modified example of the present embodiment. FIG. 6A is an external view of the bridge 31 of the modified example in a top view (plan view). FIG. 6B is an external view of the wiring layer 4 in a top view (plan view). FIG. 6C is a diagram showing an alignment process in a bridge mounting process of mounting the bridge 31 on the wiring layer 4. In FIGS. 6B and 6C, the illustration of the third layer line wiring 46 is omitted.

[0121] As shown in FIG. 6A, the bridge 31 has a first alignment mark 50A as an alignment mark.

[0122] In this modification example, the first alignment mark 50A is disposed in the vicinity of the second opposing portion 313 (see FIG. 4H). The first alignment mark 50A is disposed, for example, within the bridge insulating layer 312. Specifically, the first alignment mark 50A may be disposed in the same layer as the layer in which the bridge wiring 311 is disposed. The first alignment mark 50A may be composed of the same material as the bridge wiring 311. This facilitates the process of forming the alignment mark. However, the first alignment mark 50A may be disposed in a layer different from the layer in which the bridge wiring 311 is disposed. The first alignment mark 50A may be composed of a material different from that of the bridge wiring 311.

[0123] The first alignment mark 50A is disposed at a distance from the bridge wiring 311 in the same layer in which the bridge wiring 311 is disposed. In this way, since the first alignment mark 50A is provided separately from the bridge wiring 311, it becomes possible to perform alignment more accurately. However, a part of the bridge wiring 311 may also serve as the first alignment mark 50A.

[0124] The first alignment mark 50A has a shape corresponding to the second alignment mark 50B disposed in the wiring layer 4 described later. The first alignment mark 50A is, for example, a cross-shaped mark. However, it is not limited to this.

[0125] Preferably, a plurality of first alignment marks 50A are provided, and more preferably, three or more are provided. In this modification example, three first alignment marks 50A are provided.

[0126] Note that the first alignment mark 50A may be disposed on the surface of the second opposing portion 313 (see FIG. 4H). The first alignment mark 50A may be disposed on the bridge insulating layer 312. Further, the first alignment mark 50A may be disposed on the glass substrate 310 on the side of the second opposing portion 313.

[0127] Note that the first alignment mark 50A may be disposed near the third opposing portion 314 (see FIG. 4H). The first alignment mark 50A disposed near the third opposing portion 314 can be recognized by a camera through the glass substrate 310. The first alignment mark 50A may be disposed on the surface of the third opposing portion 314. Further, the first alignment mark 50A may be disposed on the glass substrate 310 on the side of the third opposing portion 314. Note that when a light-transmissive insulating layer is disposed on the side of the third opposing portion 314, the first alignment mark 50A may be disposed on the light-transmissive insulating layer. When the first alignment mark 50A is disposed near the third opposing portion 314, the distance from the second alignment mark 50B described later becomes close, so that the alignment accuracy can be improved.

[0128] As shown in FIG. 6B, the wiring layer 4 has a second alignment mark 50B. The second alignment mark 50B is provided on the surface of the wiring layer 4. The second alignment mark 50B may be formed of the same material as the third layer line wiring 46. Thereby, the process of forming the alignment mark becomes easy. However, the second alignment mark 50B may be formed of a material different from that of the third layer line wiring 46.

[0129] The second alignment mark 50B has a shape corresponding to that of the first alignment mark 50A. The second alignment mark 50B is, for example, a mark composed of four rectangles. However, the present invention is not limited thereto.

[0130] Preferably, a plurality of second alignment marks 50B are provided, and more preferably, three or more second alignment marks 50B are provided. In this modification, three second alignment marks 50B are provided. The number of second alignment marks 50B provided is the same as the number corresponding to the first alignment mark 50A.

[0131] In this modification example, during the bridge mounting process shown in FIG. 5D, an alignment process using alignment marks is performed. FIG. 6C is a diagram for explaining the alignment process when flip-chip mounting the bridge 31 on the wiring layer 4. FIG. 6C is a top view of the wiring layer 4 and the bridge 31 disposed on the wiring layer 4. Specifically, it is a diagram when viewing FIG. 5D in a plan view from the upper side to the lower side of the paper surface.

[0132] At least a part of the bridge 31 is composed of a member that is light-transmissive from the second opposing portion 313 to the third opposing portion 314. The glass substrate 310 of the bridge 31 is a light-transmissive member. And in this modification example, the bridge insulating layer 312 is composed of a light-transmissive material. Specifically, the bridge insulating layer 312 is preferably a light-transmissive resin material or a light-transmissive inorganic material. The light-transmissive resin material is not particularly limited as long as it is light-transmissive, but epoxy, polyimide, polybenzoxazole, benzocyclobutene, etc. can be used. If light transmittance is ensured, particles may be dispersed in these resins. The material of the particles is not particularly limited, but silica, alumina, barium sulfate, talc, aluminum nitride, silicon nitride, silicon carbide, etc. can be used. The light-transmissive inorganic material is not particularly limited, but for example, silicon oxide, silicon nitride, silicon carbonitride, aluminum oxide, etc. can be used. In this modification example, except for the wiring portions such as the bridge wiring 311 provided on the bridge 31, the surface of the wiring layer 4 can be confirmed through the bridge 31.

[0133] The second alignment mark 50B disposed on the wiring layer 4 can be confirmed by a camera through the bridge 31. Also, when the first alignment mark 50A is disposed in the vicinity of the third opposing portion 314, the first alignment mark 50A disposed in the vicinity of the third opposing portion 314 can also be confirmed by a camera through the glass substrate 310 of the bridge 31.

[0134] As shown in FIG. 6C, when the first alignment mark 50A of the bridge 31 and the second alignment mark 50B of the wiring layer 4 are aligned, the position and the rotation direction of the bridge 31 on the wiring layer 4 are accurately aligned. After the first alignment mark 50A and the second alignment mark 50B are aligned, flip chip mounting is performed. In this modified example, since flip chip mounting by metal bonding is possible after accurate alignment, the bridge 31 can be mounted with higher positional accuracy.

[0135] It is preferable that a plurality of first alignment marks 50A and second alignment marks 50B are provided on the wiring layer 4 in order to accurately align the position and the rotation direction of the bridge 31. More preferably, there are three or more first alignment marks 50A and second alignment marks 50B. The first alignment marks 50A are preferably arranged in plurality near the outer periphery of the bridge 31 in a plan view. When the shape of the bridge 31 is rectangular in a plan view, it is preferable that alignment marks are provided at two or more, preferably three or more of the four corners of the rectangular shape.

[0136] As described above, it is preferable that a first alignment mark 50A as an alignment mark is formed on the glass bridge 31 formed of a glass substrate. The first alignment mark 50A may be formed on either the second opposing portion 313 side or the third opposing portion 314 side. When the first alignment mark 50A is formed on the third opposing portion 314 side, it is preferably formed so as to be recognizable through the glass substrate 310 from the second opposing portion 313 side. When the first alignment mark 50A can be observed from the second opposing portion 313 side, when aligning the glass bridge 31 on the wiring layer 4, from the second opposing portion 313 side of the glass bridge 31, with a single camera, the first alignment mark 50A formed on the glass bridge 31 and the second alignment mark 50B formed on the wiring layer 4 can be recognized. Furthermore, since it becomes possible to perform position recognition and position correction with a camera until the glass bridge 31 contacts the wiring layer 4, the mounting accuracy of the glass bridge 31 is improved.

[0137] Even when the first alignment mark 50A is formed on the second opposing portion 313 side, when the first alignment mark 50A and the second alignment mark 50B can be simultaneously observed from the second opposing portion 313 side, when aligning the glass bridge 31 on the wiring layer 4, from the second opposing portion 313 side of the glass bridge 31, with a single camera, the first alignment mark 50A formed on the glass bridge 31 and the second alignment mark 50B formed on the wiring layer 4 can be recognized. Furthermore, since it becomes possible to perform position recognition and position correction with a camera until the glass bridge 31 contacts the wiring layer 4, the mounting accuracy of the glass bridge 31 is improved.

[0138] The electronic device of this embodiment includes the following configuration.

[0139] (1) The electronic device 1 of this embodiment includes a bridge 31 that electrically connects between a plurality of electronic components 20 and a wiring layer 4 having wiring, and the bridge 31 is metallically joined to the wiring layer 4. Thereby, an electronic device 1 capable of mounting the bridge 31 on the wiring layer 4 with high positional accuracy can be provided.

[0140] (2) In the electronic device 1 of (1), a plurality of electronic components 20 are provided. Each of the plurality of electronic components 20 has a first opposing portion 200 that faces the bridge 31. The bridge 31 has a second opposing portion 313 that faces the first opposing portion 200 of the plurality of electronic components 20 and a third opposing portion 314 formed on the opposite side of the second opposing portion 313. The bridge 31 has a bridge through electrode 315 that penetrates from the second opposing portion 313 to the third opposing portion 314, and the bridge through electrode 315 is metallically joined to the wiring layer 4. Thereby, the wiring length when electrically connecting the electronic component 20 and another layer via the bridge 31 can be shortened, and the bridge 31 can be mounted on the wiring layer 4 with high positional accuracy.

[0141] (3) In the electronic device 1 of (1) or (2), the bridge 31 further has a bridge wiring 311 that electrically connects the plurality of electronic components 20 to each other. Thereby, the exchange of power and information between the plurality of electronic components 20 can be directly performed via the bridge wiring 311.

[0142] (4) In the electronic device 1 of (3), the bridge 31 further has a bridge insulating layer 312 that insulates the bridge wiring 311. Thereby, the occurrence of a short circuit between the plurality of bridge wirings 311 and the occurrence of a short circuit between the bridge wiring 311 and the bridge through via 315 can be suppressed.

[0143] (5) In the electronic device 1 of (4), the bridge insulating layer 312 is an organic insulating layer. An organic insulating layer formed of a resin material generally has a low relative permittivity. Therefore, by using an organic insulating layer as the bridge insulating layer 312, dielectric loss can be further suppressed. Also, by using an organic insulating layer, it is possible to thicken the bridge insulating layer 312 as the bridge wiring 311 is thickened, and even in this case, the manufacturing cost can be suppressed.

[0144] (6) In the electronic device 1 of (1) to (4), an electronic component layer 2 having a plurality of electronic components 20, a wiring layer 4 having wiring, a bridge 31, and a connection layer 3 having the bridge 31 and electrically connecting the plurality of electronic components 20 and the wiring layer 4 are provided. Even in the electronic device 1 having such a configuration, the effects of the present disclosure can be obtained.

[0145] (7) In the electronic device 1 of (6), the bridge through electrode 315 electrically connects the plurality of electronic components 20 and the wiring of the wiring layer 4. Thereby, the wiring length when electrically connecting the electronic component 20 and another layer via the bridge 31 can be shortened.

[0146] (8) In the electronic device 1 of (6) to (7), the connection layer 3 has an insulating layer 30 that covers the periphery of the bridge 31, and in the insulating layer 30, a connection layer through electrode 32 (pillar 32) that penetrates from the opposing portion (second opposing portion 313) facing the electronic component layer 2 to the opposing portion (third opposing portion 314) facing the wiring layer 4 and electrically connects the electronic component 20 and the wiring of the wiring layer 4 is formed. Thereby, in portions other than the bridge 31, the electronic component 20 and the wiring of the wiring layer 4 can be electrically connected.

[0147] (9) In the electronic device 1 of (6) to (8), the plurality of electronic components 20 are arranged side by side so as to be adjacent to each other. Thereby, the plurality of electronic components 20 can be arranged at high density, and the plurality of electronic components 20 can be connected by the bridge 31.

[0148] (10) In the electronic device 1 of (6) to (9), when viewing the electronic component layer 2 and the connection layer 3 in the stacking direction, the bridge 31 is arranged so as to overlap each of the plurality of electronic components 20. Thereby, the electronic components 20 can be arranged densely in the electronic component layer 2. Therefore, in the electronic device 1 of a specified size, the amount of information that the electronic component 20 can process can be increased.

[0149] (11) In the electronic device 1 of (1) to (10), the plurality of electronic components 20 include at least a first electronic component 20A, a second electronic component 20B, and a third electronic component 20C, and there are a plurality of bridges 31. The plurality of bridges 31 include a first bridge 31A that electrically connects the first electronic component 20A and the second electronic component 20B to each other, and a second bridge 31B that electrically connects the second electronic component 20B and the third electronic component 20C to each other. Conventionally, the bridge was fixed to the wiring layer with an adhesive. In this case, the positioning accuracy of the bridge with respect to the wiring layer was low. In the present embodiment, since flip-chip mounting by metal bonding is possible, the bridge 31 can be mounted with high positional accuracy. In particular, in the electronic device 1 including three or more electronic components 20, when using a plurality of bridges 31, if the positioning accuracy of the plurality of bridges 31 is low, it has been difficult to mount them appropriately. In the present embodiment, since flip-chip mounting by metal bonding is possible, the plurality of bridges 31 can be mounted with high positional accuracy.

[0150] (12) In the electronic device 1 of (1) to (11), the bridge 31 is formed of a glass base material. Thereby, an electronic device 1 with suppressed dielectric loss can be provided.

[0151] In the electronic device 1 of (13)(12), the bridge 31 has a second opposing portion 313 that opposes the first opposing portion 200 of a plurality of electronic components 20, and a third opposing portion 314 formed on the side opposite to the second opposing portion 313. At least a part of the bridge 31 is composed of a member that is light-transmissive from the second opposing portion 313 to the third opposing portion 314, and the bridge 31 has a first alignment mark 50A. As a result, it becomes possible to mount the bridge 31 after performing alignment accurately, so that the bridge 31 can be mounted with higher positional accuracy.

[0152] In the electronic device 1 of (14)(1) to (13), the bridge 31 is smaller than any of the plurality of electronic components 20. As a result, the amount of material used to form the bridge 31 can be reduced, so that the cost can be reduced.

[0153] As described above, the embodiments of the present invention have been described. However, the present invention is not limited to the above-described embodiments, and various changes and modifications are possible. For example, the components of each embodiment can be replaced with each other.

Explanation of Reference Numerals

[0154] 1 Electronic device 2 Electronic component layer 20 Electronic component 200 First opposing portion 21 Insulating layer 3 Connection layer 30 Insulating layer 31 Bridge 310 Glass substrate 311 Bridge wiring 312 Bridge insulating layer 313 Second opposing portion 314 Third opposing portion 315 Bridge through via (bridge through electrode) 32 Pillar (connection layer through electrode) 4 Wiring layer 42 First layer line wiring 43 First insulating layer 44 Second layer line wiring 45 Second insulating layer 46 Third layer line wiring 47 First layer via wiring 48 Second layer via wiring 49 Bump electrode 5 Substrate 50A First alignment mark (alignment mark) 50B Second alignment mark

Claims

1. A plurality of electronic components; a first bridge electrically connecting the plurality of electronic components; a second bridge electrically connecting the plurality of electronic components; a wiring layer having wiring; Equipped with the first bridge and the second bridge are metal-bonded to the wiring layer; At least one electronic component among the plurality of electronic components is electrically connected to the first bridge and also to the second bridge, The electronic device, wherein the plurality of electronic components are covered with resin.

2. Each of the plurality of electronic components has a first opposing portion opposing the first bridge and the second bridge; the first bridge and the second bridge each have a second opposing portion opposing the first opposing portion of the plurality of electronic components, and a third opposing portion formed on the opposite side of the second opposing portion; the first bridge and the second bridge further include a bridge through electrode that penetrates from the second opposing portion to the third opposing portion; The electronic device according to claim 1 , wherein the bridge through electrode is metal-bonded to the wiring layer.

3. 3. The electronic device according to claim 1, wherein the first bridge and the second bridge further include bridge wiring that electrically connects the plurality of electronic components to each other.

4. The electronic device according to claim 3 , wherein the first bridge and the second bridge further include a bridge insulating layer that insulates the bridge wiring.

5. The electronic device of claim 4 , wherein the bridge insulating layer is an organic insulating layer.

6. an electronic component layer having the plurality of electronic components; The electronic device according to claim 2 , further comprising: a connection layer having the first bridge and the second bridge, and electrically connecting the plurality of electronic components to the wiring layer.

7. The electronic device according to claim 6 , wherein the bridge through electrodes electrically connect the plurality of electronic components to the wiring of the wiring layer.

8. the connection layer has an insulating layer that covers the periphery of the first bridge and the second bridge; The electronic device according to claim 6, wherein a connection layer through electrode is formed in the insulating layer, the connection layer through electrode penetrating from an opposing portion facing the electronic component layer to an opposing portion facing the wiring layer, and electrically connecting the electronic component and the wiring of the wiring layer.

9. The electronic device according to claim 6 or 7, wherein the plurality of electronic components are arranged adjacent to each other.

10. 8. The electronic device according to claim 6, wherein when the electronic component layer and the connection layer are viewed in a stacking direction, the first bridge and the second bridge are arranged so as to overlap with each of the plurality of electronic components.

11. the plurality of electronic components include at least a first electronic component, a second electronic component, and a third electronic component; 3. The electronic device according to claim 1, wherein the first bridge electrically connects the first electronic component and the second electronic component to each other, and the second bridge electrically connects the second electronic component and the third electronic component to each other.

12. 3. The electronic device according to claim 1, wherein the first bridge and the second bridge are formed from a glass substrate.

13. the first bridge and the second bridge each have a second opposing portion opposing the first opposing portion of the plurality of electronic components, and a third opposing portion formed on the opposite side of the second opposing portion; at least a portion of the first bridge and the second bridge is made of a light-transmitting material from the second opposing portion to the third opposing portion; The electronic device of claim 12 , wherein the first bridge and the second bridge have alignment marks.

14. 3. The electronic device according to claim 1, wherein the first bridge and the second bridge are smaller than any of the plurality of electronic components.

15. A method for manufacturing the electronic device of claim 1, comprising: a panel carrier preparation process for preparing a panel carrier; a release layer forming step of forming a release layer on the panel carrier; a wiring layer forming step of forming the wiring layer on the release layer; a bridge mounting step of metal-bonding the first bridge, the second bridge, and the wiring layer by flip-chip mounting; an electronic component mounting step of electrically connecting the first bridge and the second bridge to at least one electronic component among the plurality of electronic components; covering the electronic component with resin; and a panel carrier removing step of removing the panel carrier.

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