Substrate processing apparatus

Abstract

To provide a technique that can uniformly irradiate a substrate with light including vacuum-ultraviolet light in lithographic processing.SOLUTION: A substrate processing apparatus 1 according to the present embodiment comprises a workpiece support part 25, a light source 41, a light shielding plate 54, a moving mechanism 80, a moving mechanism 70, and a controller 100. The controller 100 executes first control, second control, and third control. In the first control, the controller controls the moving mechanism 80 so that an irradiation area is set along a first scanning path in a workpiece W. In the second control, the controller controls the moving mechanism 70 after the first control. In the third control, the controller controls the moving mechanism 80 so that an irradiation area is set along a second scanning path that partially overlaps the first scanning path after the second control. The distance in a second direction between adjacent nodes is the integral multiple of the distance by which the workpiece support part 25 is moved by the moving mechanism 70 in the second control.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus.

Background Art

[0002] Patent Document 1 discloses an auxiliary exposure apparatus that irradiates a resist film formed on a substrate with ultraviolet light separately from an exposure process to improve the accuracy of the film thickness and line width or the in-plane uniformity of the resist pattern.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of uniformly irradiating a substrate with light including vacuum ultraviolet light in a lithography process.

Means for Solving the Problems

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a substrate support configured to support a substrate on which a resist film is formed, and a light source that irradiates irradiation light including vacuum ultraviolet light. The substrate processing apparatus includes an illuminance distribution shaping unit that shapes a line illuminance distribution, which is a distribution along a second direction intersecting a first direction of a value obtained by integrating an illuminance distribution of the irradiation light over the first direction, and is partitioned by a plurality of straight lines connecting a pair of end points and one or more nodes between the pair of end points. The substrate processing apparatus includes a first moving mechanism that moves at least one of the substrate support and the light source so that a relative position of the light source with respect to the substrate moves at a constant speed in the first direction such that an irradiation region on the substrate where the irradiation light is irradiated changes over time. The substrate processing apparatus includes a second moving mechanism that moves at least one of the substrate support and the light source so that a relative position of the light source with respect to the substrate moves in the second direction, and a control unit that controls the first moving mechanism and the second moving mechanism. The control unit executes a first control that controls the first moving mechanism so that an irradiation region is set along a first scanning path on the substrate, and a second control that controls the second moving mechanism after the first control. The control unit executes a third control that controls the first moving mechanism so that an irradiation region is set along a second scanning path that partially overlaps the first scanning path after the second control. A distance in the second direction between adjacent end points and nodes, and a distance in the second direction between adjacent nodes are integer multiples of a moving distance by the second moving mechanism in the second control.

Effect of the Invention

[0006] According to the present disclosure, it is possible to uniformly irradiate a substrate with light including vacuum ultraviolet light in a lithography process.

Brief Description of the Drawings

[0007]

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DETAILED DESCRIPTION OF THE INVENTION

[0008] FIG. 1 is a schematic diagram (longitudinal side view) showing a configuration example of a substrate processing apparatus 1 according to the present embodiment. The substrate processing apparatus 1 shown in FIG. 1 irradiates a workpiece W with light for processing. For example, the substrate processing apparatus 1 is configured to irradiate light including vacuum ultraviolet light (VUV light: Vacuum Ultra Violet Light) onto a resist film or a resist pattern formed on the surface of the workpiece W. By irradiating the light including vacuum ultraviolet light by the substrate processing apparatus 1, the sensitivity at the time of exposure of these resist films can be improved. Further, by irradiating the light including vacuum ultraviolet light, the surface roughness of the resist pattern obtained by the exposure and development processes can also be improved.

[0009] The workpiece W to be processed is, for example, a substrate, or a substrate in a state where a film, a circuit, etc. are formed by performing a predetermined process. The substrate included in the workpiece W is, as an example, a wafer containing silicon. The workpiece W (substrate) generally has a disk shape as an example, but a part of the circle may be cut out, or it may have a shape other than a circle such as a polygon. The workpiece W to be processed may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), etc., or an intermediate obtained by performing a predetermined process on these substrates, etc.

[0010] The substrate processing apparatus 1 has a function of irradiating the surface of the workpiece W with the processing irradiation light L1. The irradiation light L1 is the light irradiated from the light source 41 (details will be described later). As an example, after forming a resist film on the SOC film (Spin-on-Carbon) and the SOG film (Spin-on-Glass) on the substrate, an exposure and development process is performed to form a resist pattern of a predetermined pattern. The resist pattern is a mask pattern for etching the underlying SOC film and SOG film to form a pattern on these underlying films. The substrate processing apparatus 1 has a function of, for example, irradiating the surface of the workpiece W on which the resist film is formed with the processing irradiation light L1 to improve the sensitivity of the resist film to exposure and to improve the roughness of the surface of the resist pattern. In the present embodiment, the case where the workpiece W after the resist film is formed and before the exposure and development process is irradiated with the processing irradiation light L1 by the substrate processing apparatus 1 will be described.

[0011] In addition, in the substrate processing apparatus 1 according to the present embodiment, the case where the resist material used for forming the resist pattern is a material suitable for EUV lithography using EUV as an exposure light source will be described. Note that EUV is Extreme Ultraviolet, and extreme ultraviolet rays with a wavelength of 13.5 nm are irradiated from the EUV exposure light source. The workpiece W on which the resist film is formed by the resist material is irradiated with light including the above-mentioned VUV light under predetermined conditions using the substrate processing apparatus 1. As a result, the sensitivity in the subsequent exposure process is improved. Furthermore, the roughness of the surface of the resist when the resist pattern is formed by the exposure and development process is improved. Also, the roughness of the surface of the pattern obtained as a result of etching using this resist pattern as a mask can be improved.

[0012] Each part of the substrate processing apparatus 1 will be described. As shown in FIG. 1, the substrate processing apparatus 1 includes a housing 21, a work support portion 25 (substrate support portion), a gas supply portion 30, a gas discharge portion 32, and an atmosphere adjustment portion 34. Further, the substrate processing apparatus 1 includes one or a plurality (here, one) of light sources 41, a light shielding plate 54 (illuminance distribution forming portion), an illuminance monitor 61, a moving mechanism 70 (second moving mechanism), a moving mechanism 80 (first moving mechanism), and a controller 100 (control portion). Note that the substrate processing apparatus 1 may include a lamp shutter (not shown) that switches between a state where the irradiation light L1 reaches the work W and a state where it does not, and a light transmissive plate (not shown) that functions as a partition wall below the lamp shutter, etc. In FIG. 1 and the like, the illustration of the configurations such as the lamp shutter and the light transmissive plate is omitted.

[0013] The housing 21 is, for example, a part of a vacuum container provided in an air atmosphere, and is configured to be able to accommodate the work W conveyed by a conveying mechanism (not shown). That is, the housing 21 functions as a processing container that performs processing related to the work W inside.

[0014] In the substrate processing apparatus 1, processing on the work W is performed with the work W accommodated in the housing 21. An opening (not shown) for loading and unloading the work W with respect to the housing 21, i.e., a transfer port, is formed in the side wall of the housing 21. The transfer port is opened and closed by, for example, a gate valve (not shown).

[0015] The work support portion 25 is a support portion configured to be able to support the work W (substrate) on which a resist film is formed. The work support portion 25 supports a substantially central portion of the horizontally arranged work W with the surface on which the resist film is formed facing upward, and holds the work W by, for example, vacuum suction (holding by the differential pressure with the pressure in the chamber).

[0016] The gas supply unit 30 is configured to supply an inert gas (e.g., argon, nitrogen, etc.) into the housing 21 through a through-hole 21a formed in the housing 21. The gas supply unit 30 includes a gas source 30a, a valve 30b, and a pipe 30c. The gas source 30a stores an inert gas and functions as a supply source of the inert gas. The valve 30b operates based on an operation signal from the controller 100 to open and close the pipe 30c. The pipe 30c connects the gas source 30a, the valve 30b, and the through-hole 21a in order from the upstream side.

[0017] The gas discharge unit 32 discharges the gas from the housing 21 through a through-hole 21b formed in the housing 21. The gas discharge unit 32 includes a vacuum pump 32a and a pipe 32c. The vacuum pump 32a discharges the gas from inside the housing 21. The pipe 32c connects the through-hole 21b and the vacuum pump 32a.

[0018] The atmosphere adjustment unit 34 can adjust the inside of the housing 21 to an atmospheric atmosphere through a through-hole 21c formed in the housing 21. The atmosphere adjustment unit 34 includes a valve 34b and a pipe 34c. The valve 34b operates based on an operation signal from the controller 100 to open and close the pipe 34c. The pipe 34c can connect the through-hole 21c to the atmospheric atmosphere. That is, when the valve 34b is opened, the inside of the housing 21 is adjusted to the atmospheric atmosphere.

[0019] The light source 41 irradiates irradiation light including vacuum ultraviolet light. The light source 41 may be accommodated, for example, in a housing (not shown) provided at the upper part of the housing 21. Further, the light source 41 may be switched on and off by a switch (not shown) controlled by, for example, the controller 100.

[0020] The lamp in the light source 41 irradiates light including light in the wavelength range of, for example, 115 nm to 400 nm. The lamp is, for example, constantly lit for the stability of the light source. As an example, the light source 41 irradiates light having a continuous spectrum in the range of 115 nm to 400 nm. The "light having a continuous spectrum" may include light containing at least a part (for example, a wavelength width of 10 nm or more) of continuous spectral components in the wavelength range of 100 nm to 200 nm (corresponding to the wavelength range of vacuum ultraviolet light (VUV light)).

[0021] Note that the continuous spectrum refers to a spectrum that continuously spreads in a specific wavelength range (in this embodiment, a wavelength width of 10 nm or more), and is a spectrum distinguished from a line spectrum (emission line spectrum) at a specific wavelength. As the light having a continuous spectrum including a part of the wavelength range of 100 nm to 200 nm, the light having a continuous spectrum in the wavelength range of 115 nm to 400 nm described above may be used. Note that the light emitted from the light source 41 does not necessarily have to be "light having a continuous spectrum" in all of its wavelength range, and may be light having a continuous spectrum in at least a part of the range. As an example, the light emitted from the light source 41 has a continuous spectrum in the wavelength range overlapping with the wavelength range of 100 nm to 200 nm (corresponding to the wavelength range of vacuum ultraviolet light (VUV light)), so that the action of the irradiated light can be effectively exerted.

[0022] Vacuum ultraviolet light (VUV light) is generally light in the range of a wavelength of 10 nm to 200 nm. However, the light emitted from the light source 41 is more likely to enhance the effect of the treatment by the substrate processing apparatus 1, that is, the effect of modifying the resist film, if it is light on the longer wavelength side of 100 nm or more among the VUV light. Since the light on the shorter wavelength side (light having a wavelength shorter than 100 nm) hardly enters the inside of the resist film, the effect of modifying the entire resist film may hardly be exerted.

[0023] Note that the main wavelength range of the light emitted from the light source 41 may be different from, for example, the wavelength of the light used for exposure of the resist film. The wavelength of the light used for exposure is, for example, EUV (Extreme Ultraviolet) (for example, a laser with a wavelength of 13.5 nm). If light with the wavelength used for exposure of the resist film, that is, EUV light, is used in the substrate processing apparatus 1, there is a possibility that the exposure process for the workpiece W may proceed at the timing of the process by the substrate processing apparatus 1. Therefore, by setting the main wavelength range of the light emitted from the light source 41 to 100 nm or more, it is considered that an effect of light with a wavelength different from that of the exposure by EUV light can be obtained.

[0024] In addition to VUV light, the light emitted from the light source 41 may contain near-ultraviolet light (near-ultraviolet rays) with a wavelength longer than that of VUV light. Also, as an example, the light from the light source 41 can be configured to include light in a band with a wavelength of 160 nm or less. Thus, the light emitted from the light source 41 includes at least light in the wavelength range defined as VUV light.

[0025] The lamp provided in the light source 41 may be, for example, a deuterium lamp and may be configured to irradiate VUV light with a wavelength of 200 nm or less. The wavelength of the peak of the continuous spectrum may be, for example, 160 nm or less, or may be 150 nm or more. Also, when the wavelength of the peak in the spectral spectrum of the light from the light source 41 is 248 nm or less, the effect of the light in the wavelength range of the VUV light contained in the light from the light source 41 is enhanced. The light from the light source 41 may be light forming a continuous spectrum having a plurality of sub-peaks. The sub-peaks may be at 248 nm or less, or may be, for example, at 160 nm or less. Note that the light from the light source 41 is not limited to a continuous spectrum and includes, for example, light with one or more wavelengths in the wavelength range of 115 nm to 400 nm. The lamp of the light source 41 irradiates the irradiation light L1 from above the light shielding plate 54 toward the workpiece W provided below the light shielding plate 54.

[0026] Since the wavelength range of the spectrum of the light irradiated from the light source 41 is relatively wide, the resist film on the work W receives the energy of light of various wavelengths. As a result, various reactions occur on the surface of the resist film. Specifically, the chemical bonds at various positions in the molecules constituting the resist film are broken, thereby increasing the sensitivity of the resist film to exposure. Therefore, even with a smaller exposure amount, exposure can be appropriately performed. In addition, since various compounds are generated by the cleavage of the above-described chemical bonds, the orientation of the molecules present in the resist film before light irradiation is eliminated. As a result, the surface free energy in the resist film decreases, and the internal stress decreases. That is, by using the light source 41 as the light source, the fluidity of the surface of the resist film tends to increase, and as a result, the effect of improving the roughness of the surface when forming the resist pattern can be enhanced.

[0027] When irradiating the resist film on the work W with light including VUV light from the light source 41, if there is a bias in the energy of the light received by the resist film on the work W, there may be a bias in the characteristics of the resist on the surface of the work W irradiated with the VUV light. Therefore, it is required that the light including the VUV light be irradiated as evenly as possible over the entire surface of the work W. In addition, when attempting to adjust the characteristics of the resist film on the surface of the work W by irradiating light from the light source 41, the irradiation amount of the light may be important. Therefore, in the substrate processing apparatus 1, by adjusting the amount of light by the light shielding plate 54 and setting the irradiation region by the moving mechanism 70 and the moving mechanism 80, it is possible to equalize the exposure amount among a plurality of works W and adjust the irradiation amount distribution of the light in a certain work W.

[0028] The moving mechanism 80 moves the light source 41 in a straight orbit in the first direction so that the relative position of the light source 41 with respect to the work W moves at a constant speed in the first direction such that the irradiation region irradiated with the irradiation light L1 in the work W changes with time. Here, although the moving mechanism 80 is described as moving the light source 41 in the first direction, it is sufficient that the relative position of the light source 41 with respect to the work W moves at a constant speed in the first direction, and the moving mechanism 80 may move the work support portion 25 in the first direction.

[0029] The moving mechanism 70 moves the work support portion 25 so that the relative position of the light source 41 with respect to the work W moves in a second direction that is horizontal and intersects the moving direction (first direction) of the light source 41 by the above-described moving mechanism 80. Here, although the moving mechanism 70 is described as moving the work support portion 25 in the second direction, it is only necessary that the relative position of the light source 41 with respect to the work W moves in the second direction, and the moving mechanism 70 may move the light source 41 in the second direction.

[0030] The moving mechanism 70 includes an arm 71 and a drive unit 72. The arm 71 is a rod-shaped member extending in the horizontal direction. One end thereof is fixed to the lower surface of the work support portion 25 (the surface on the opposite side of the mounting surface of the work W in the work support portion 25), and the other end is connected to the drive unit 72. The arm 71 is driven by the drive unit 72 and moves in a straight track in the second direction. An illuminance monitor 61 is provided at a portion of the arm 71 connected to the drive unit 72. The illuminance monitor 61 is connected to the work support portion 25 via the arm 71 and is provided so as to be able to measure the illuminance of the irradiation light L1. The drive unit 72 is an actuator using, for example, an electric motor as a power source. The drive unit 72 operates the arm 71 based on a control signal from the controller 100.

[0031] FIG. 2 is a diagram for explaining the exposure process by the operation control of the moving mechanism 70 and the moving mechanism 80. As shown in FIG. 2(a), assume that the work W is set on the work support portion 25 and the light source 41 is set at the initial position. As shown in FIG. 2(b), the light source 41 that irradiates the irradiation light L1 with a predetermined irradiation width is linearly moved at a constant speed in the first direction (the direction described as "Sweep" in the figure) by the moving mechanism 80, and the work W is exposed.

[0032] Subsequently, as shown in Fig. 2(c), the work support portion 25 is fed by a certain amount in the second direction (the direction described as "Step" in the figure) by the moving mechanism 70, and the planned irradiation area by the irradiation light L1 is changed. Subsequently, as shown in Fig. 2(d), the light source 41 that irradiates the irradiation light L1 with a predetermined irradiation width is moved at a constant speed in the first direction (the direction described as "Sweep" in the figure) by the moving mechanism 80, and the work W is exposed. Subsequently, as shown in Fig. 2(e), the work support portion 25 is fed by a certain amount in the second direction (the direction described as "Step" in the figure) by the moving mechanism 70, and the planned irradiation area by the irradiation light L1 is changed. In this way, by repeatedly performing the movement of the light source 41 by the moving mechanism 80 and the movement of the work support portion 25 by the moving mechanism 70 in order, as shown in Fig. 2(f), the entire surface of the work W is exposed. The feed amount of the work W by the moving mechanism 70 is made smaller than the irradiation width of the irradiation light L1 described above. For this reason, a part of the scanning path (the first scanning path) in the exposure of the work W shown in Fig. 2(b) and the scanning path (the second scanning path) in the exposure of the work W shown in Fig. 2(d) overlap each other. By performing the exposure in a manner of overcoating, the exposure amount is made uniform over the entire work W.

[0033] In the following description, the integrated value of the illuminance distribution of the irradiation light L1 on the work W in the first direction (the moving direction of the light source 41) may be described as the line illuminance. When the line illuminance is divided by the moving speed of the light source 41, the exposure amount is derived. When the moving speed of the light source 41 is constant, the line illuminance distribution is the same at any cross section on the orbit along which the light source 41 moves. In the following description, it is assumed that the moving speed of the light source 41 is always constant.

[0034] FIG. 3 is a diagram for explaining the exposure amount distribution. Now, as shown in FIG. 3(a), consider the exposure of the target area 301, which is a virtual area having the same width as the "Step" width, which is the amount of movement in the second direction and extends in the first direction ("Sweep" direction), on the workpiece W. Assume that the ratio of the "Step" width to the irradiation width 311 is 1:4. In this case, as shown in FIGS. 4(b) to 4(e), while repeating the movement in the second direction, the total exposure amount to the target area 301 becomes one portion of the line illuminance distribution 312. Since this is the same regardless of the position of the target area 301, if we consider that the target area is spread over the entire surface of the workpiece W, it can be seen that the exposure amount is uniform in units of the "Step" width on the workpiece W. Note that in the workpiece W after the full-surface exposure, as shown in FIG. 3(f), a striped pattern will appear with the period of the "Step" width.

[0035] As described above, while the exposure amount is uniform in units of the "Step" width on the workpiece W, the exposure amount distribution within the target area 301 is not necessarily uniform. In this regard, if the exposure amount distribution within the target area 301 can be made uniform, the exposure amount uniformity of the entire surface of the workpiece W can be obtained.

[0036] FIG. 4 is a diagram for explaining an example in which the exposure amount distribution within the target area 301 becomes uniform. In the example shown in FIG. 4(a), the line illuminance distribution 312 is made triangular by a light-shielding plate 54, which will be described later, and the ratio of the "Step" width to the irradiation width 311 is 1:4 (overlap exposure n = 4). As shown in FIG. 4(b), when exposure is performed with such a line illuminance distribution 312 and n, integrating the exposure amount (line illuminance) in each exposure results in a rectangle without unevenness. In this case, it can be said that the exposure amount distribution within the target area 301 is uniform.

[0037] FIG. 5 and FIG. 6 are diagrams for explaining the conditions for the exposure amount distribution in the target area 301 to be uniform (conditions for uniform exposure). In each example shown in FIG. 5, the exposure amount distribution is uniform, and in each example shown in FIG. 6, the exposure amount distribution is not uniform. When the second direction (Step direction, the vertical direction in the figure) shown in FIGS. 5 and 6 is y, and the constants are a and b, the line illuminance F(y) between nodes is represented by ay + b. And in order to achieve uniform exposure, it is necessary to satisfy a≠±∞. Although a certain degree of illuminance variation is allowed depending on the process of the treatment, generally, a line illuminance distribution that is substantially linear with respect to the first direction (Step direction), that is, the line illuminance F(y)=ay + b, is required to achieve uniform exposure. Note that the line illuminance distribution can be rephrased as the integrated irradiation amount distribution per 1Sweep width.

[0038] As more specific conditions for achieving uniform exposure, for example, the following three can be mentioned. Condition I. Both the speed at which the light source 41 is moved in the first direction and the "Step" width are constant Condition II. The line illuminance distribution is composed of broken lines. However, when the broken line is represented by F(y)=ax + b, the line segment with a = ±∞ is not included Condition III. In the line illuminance distribution, the distance between nodes in the second direction (or between an end point and a node) is a positive integer multiple of the "Step" width

[0039] The line illuminance distributions 312 shown in FIGS. 5(a) to 5(d) satisfy all of Conditions I to III. The line illuminance distribution 312 shown in FIG. 5(a) has the simplest polygonal line configuration. As shown in FIG. 5(b), there may be a plurality of polygonal lines constituting the line illuminance distribution 312. As shown in FIG. 5(c), the line illuminance distribution 312 is partitioned by a plurality of straight lines connecting a pair of end points 401, 401 and a plurality of nodes 402, 402 between the pair of end points 401, 401 (details will be described later). In the example shown in FIG. 5(c), the distance in the second direction between the end point 401 and the node 402 is set to 1 times the width of "Step", and the distance in the second direction between the nodes 402, 402 is set to 6 times the width of "Step". As shown in FIG. 5(d), as long as Conditions I to III are satisfied, the line illuminance distribution may be an asymmetric distribution in the second direction.

[0040] The line illuminance distributions 312 shown in FIGS. 6(a) to 6(d) do not satisfy at least any one of Conditions I to III. The line illuminance distribution 312 shown in FIG. 6(a) is not a polygonal line distribution. For the line illuminance distribution 312 shown in FIG. 6(b) and the line illuminance distribution 312 shown in FIG. 6(c), the distance between nodes (or between an end point and a node) is not a positive integer multiple of the width of "Step". For the line illuminance distribution 312 shown in FIG. 6(d), when the polygonal line is represented by F(y)=ax + b, it includes a line segment with a = ±∞. When such a vertical line segment is included, as shown in FIG. 6(e), the exposure amount becomes locally large at the overlapping portion of the vertical line segments, so uniform exposure cannot be achieved.

[0041] As a configuration for realizing the above conditions I to III that enable uniform exposure within the target area 301, a light-shielding plate 54, which is an illuminance distribution shaping unit that shapes the line illuminance distribution, is provided. The light-shielding plate 54 functions as a light-shielding member (mask) that adjusts the irradiation area of the irradiation light L1 emitted from the light source 41 (the reach range of the irradiation light L1 on the surface of the workpiece W). The light-shielding plate 54 includes an opening portion 54x (see FIG. 7 etc.) that allows the irradiation light L1 to pass through. In the light-shielding plate 54, the portion other than the opening portion 54x is a light-shielding portion that does not allow the irradiation light L1 to pass through. The light-shielding plate 54 shapes the line illuminance distribution by allowing only the opening portion 54x to pass the irradiation light L1.

[0042] The light-shielding plate 54 shapes the line illuminance distribution, which is the illuminance distribution of the irradiation light L1, and is partitioned by a plurality of straight lines connecting a pair of end points and one or more nodes between the pair of end points. In the line illuminance distribution shaped by the light-shielding plate 54, the distance in the second direction between adjacent end points and nodes, and the distance in the second direction between adjacent nodes are integer multiples of the moving distance ("Step" width) by the moving mechanism 70.

[0043] FIG. 7 is a diagram showing variations of the light-shielding plate 54 for the triangular line illuminance distribution 312. As shown in FIG. 7(a), now, assume that the triangular line illuminance distribution 312 is to be shaped. In this case, the opening portion 54x of the light-shielding plate 54 may be one triangular shape as shown in FIG. 7(b), or may be a rhombus shape formed by combining two triangles as shown in FIG. 7(c). Also, as shown in FIG. 7(d), the opening portion 54x may have a discontinuous portion in the first direction and include a plurality (for example, two) of triangular shapes.

[0044] FIG. 8 is a diagram showing variations of the light shielding plate 54 for the trapezoidal line illuminance distribution 312. As shown in FIG. 8(a), now, assume that the trapezoidal line illuminance distribution 312 is shaped. In this case, the opening portion 54x of the light shielding plate 54 may be one trapezoid as shown in FIG. 8(b), or may be a hexagonal shape formed by combining two trapezoids as shown in FIG. 8(c). Further, as shown in FIG. 8(d), the opening portion 54x may have a discontinuous portion in the first direction and may include a plurality (for example, two) of trapezoids. Note that the illuminance distribution on the actual substrate may not be strictly uniform. In that case, the opening width in the first direction (Sweep direction) of the opening is adjusted so that the line illuminance obtained by integrating the illuminance distribution irradiating the substrate through the width becomes the target line illuminance.

[0045] Further, the opening portion 54x may be formed asymmetrically in the second direction so that the line illuminance distribution becomes an asymmetric distribution in the second direction, as shown in FIG. 5(d) for example.

[0046] The controller 100 controls each component included in the substrate processing apparatus 1. The controller 100 is composed of one or more control computers. FIG. 9 is a block diagram illustrating the hardware configuration of the controller 100. For example, the controller 100 has a circuit 120 shown in FIG. 9. The circuit 120 has one or more processors 121, a memory 122, a storage 123, and an input / output port 124. The storage 123 has a computer-readable storage medium such as a hard disk. The storage medium stores a program for causing the substrate processing apparatus 1 to execute a predetermined substrate processing procedure. The storage medium may be a removable medium such as a non-volatile semiconductor memory, a magnetic disk, and an optical disk. The memory 122 temporarily stores the program loaded from the storage medium of the storage 123 and the calculation results by the processor 121. The processor 121 executes the above program in cooperation with the memory 122 to constitute each of the above-described functional modules. The input / output port 124 inputs and outputs electrical signals to and from each part controlled by the controller 100 according to a command from the processor 121.

[0047] Note that the hardware configuration of the controller 100 is not necessarily limited to one that constitutes each functional module by a program. For example, each functional module of the controller 100 may be constituted by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) integrating the same.

[0048] The controller 100 controls the above-described moving mechanisms 70 and 80. The controller 100 is configured to execute the following first control, second control, and third control. In the first control, as shown in FIG. 2(b), the moving mechanism 80 is controlled so that an irradiation region is set along the first scanning path on the workpiece W. In the second control, as shown in FIG. 2(c), the moving mechanism 70 is controlled so that the workpiece support portion 25 moves in the second direction after the first control. In the third control, as shown in FIG. 2(d), the moving mechanism 80 is controlled so that an irradiation region is set along a second scanning path that partially overlaps the first scanning path after the second control.

[0049] Next, the operation and effect of the substrate processing apparatus 1 according to the present embodiment will be described.

[0050] The substrate processing apparatus 1 according to this embodiment includes a work support portion 25, a light source 41, a light shielding plate 54, a moving mechanism 80, a moving mechanism 70, and a controller 100. The work support portion 25 is configured to be able to support a work W on which a resist film is formed. The light source 41 irradiates irradiation light L1 including vacuum ultraviolet light. The light shielding plate 54 shapes the line illuminance distribution of the irradiation light L1, which is defined by a plurality of straight lines connecting a pair of end points and one or more nodes between the pair of end points. The moving mechanism 80 moves the light source 41 so that the relative position of the light source 41 with respect to the work W moves at a constant speed in the first direction such that the irradiation region irradiated with the irradiation light L1 on the work W changes over time. The moving mechanism 70 moves the work support portion 25 so that the relative position of the light source 41 with respect to the work W moves in a second direction intersecting the first direction. The controller 100 controls the moving mechanism 80 and the moving mechanism 70. The controller 100 executes first control, second control, and third control. In the first control, the moving mechanism 80 is controlled so that an irradiation region is set along a first scanning path on the work W. In the second control, the moving mechanism 70 is controlled after the first control. In the third control, the moving mechanism 80 is controlled so that an irradiation region is set along a second scanning path that partially overlaps the first scanning path after the second control. The distance in the second direction between adjacent end points and nodes, and the distance in the second direction between adjacent nodes are integer multiples of the moving distance of the work support portion 25 by the moving mechanism 70 in the second control.

[0051] In the substrate processing apparatus 1 described above, the light source 41 is moved at a constant speed in the first direction, and the irradiation light L1 is irradiated along the first scanning path in the workpiece W. Subsequently, the workpiece support portion 25 moves in the second direction, and the irradiation light L1 is irradiated along the second scanning path that partially overlaps the first scanning path. In this way, the irradiation range is divided into a plurality of strip-shaped pieces (the first scanning path and the second scanning path), and they are overlapped and exposed to each other. As a result, the illuminance profile is divided and mixed between each scanning path, and the exposure amount is made uniform. In addition, by making the distance between adjacent end points and nodes (or the distance between adjacent nodes) an integral multiple of the moving distance of the workpiece support portion 25 in the second direction, the exposure amount of each scanning path can be appropriately made uniform. According to the above configuration, for example, even when the illuminance profile deviates from the ideal value due to differences between lamp individuals or changes over time, the workpiece W can be irradiated uniformly with light including vacuum ultraviolet light. Regarding the above, taking the target area 301 in the embodiment as an example, the line illuminance distribution is divided into n (n = irradiation width ÷ Step width), and they are overlapped and exposed. At this time, by making the distance between adjacent end points and nodes of the line illuminance distribution an integral multiple, the exposure amount within the target area 301 becomes uniform.

[0052] The substrate processing apparatus 1 includes a light shielding plate 54 that shapes the illuminance distribution by allowing only the irradiation light L1 to pass through the opening portion 54x as an illuminance distribution shaping unit. By providing such a light shielding plate 54, a desired line illuminance distribution can be easily shaped.

[0053] The light source 41 has one or more lamps, and the one or more lamps irradiate the irradiation light L1 from above the light shielding plate 54 toward the workpiece W provided below the light shielding plate 54. According to such a configuration, a desired line illuminance distribution can be easily shaped.

[0054] The substrate processing apparatus 1 is connected to the work support portion 25, and further includes an illuminance monitor 61 that is provided so as to be able to measure the illuminance of the irradiation light L1 in the irradiation of the irradiation light L1 along the first scanning path and the irradiation of the irradiation light L1 along the second scanning path. In this way, since the illuminance monitor 61 connected to the work support portion 25 is provided, the lamp illuminance can be appropriately measured without adding a new configuration.

[0055] The opening portion 54x may have a discontinuous portion in the first direction. For example, even when the opening portion 54x has a discontinuous shape according to unevenness or bias in the illuminance distribution of the lamp itself, a desired line illuminance distribution can be shaped by appropriately designing the shape.

[0056] The opening portion 54x may be formed asymmetrically in the second direction. For example, when it is difficult to provide a symmetric opening according to unevenness or bias in the illuminance distribution of the lamp itself, the opening portion 54x may be formed in an asymmetric shape, which may enable installation. Even if it has an asymmetric shape, a desired line illuminance distribution can be shaped by appropriately designing it.

[0057] As described above, the substrate processing apparatus 1 according to the present embodiment has been described, but the substrate processing apparatus according to one aspect of the present disclosure is not limited thereto.

[0058] For example, as shown in FIGS. 10(a) and 10(b), the light source may have a plurality of lamps 411 and 412 arranged in the first direction ("Sweep" direction) for increasing the light amount. In this case, since the "Sweep" speed can be increased compared to the case where there is one lamp, the process time can be shortened.

[0059] Also, as shown in FIGS. 11(a) and 11(b), the light source may have a plurality of lamps 411 and 412 arranged in the second direction (the "Step" direction). Even with such a configuration, the process time can be shortened. Further, in such a configuration, as shown in FIG. 12, the pitch between the two opening portions 54x and 54x may be set to a pitch of "Step" width × n (an integer) in the second direction, and for example, the pitch may be approximately the radius of the workpiece W. According to such a configuration, exposure can be performed with a half "Step" stroke. Note that the irradiation region does not necessarily have to be strictly rectangular as long as the exposure amount is within an acceptable range.

[0060] Also, as shown in FIGS. 13(a), 13(b), and 13(c), the light source may have a plurality of lamps 411 and 412 arranged in the second direction (the "Step" direction) and arranged such that their irradiation ranges overlap each other. As shown in FIGS. 13(b) and 13(c), for example, the "Step" width may be set to approximately the irradiation width of one lamp. According to such a configuration, the number of "Step" operations can be reduced, and shortening of the exposure process time can be achieved.

[0061] Also, as shown in FIGS. 14(a) and 14(b), as the illuminance monitor, a sensor array 610 in which a large number of light receiving elements 650 are arranged in the second direction may be used. By sweeping the light source 41 over such a sensor array 610, multi-point measurement can be performed simultaneously. Note that, as shown in FIG. 15, the sensor array 610 may be arranged obliquely with respect to the first direction, which is the scanning direction of the light source 41. According to such a configuration, the detection interval of light can be shortened.

[0062] Also, as shown in FIG. 16, a configuration may be adopted in which the light that has passed through the opening portion 54x is condensed by a lens 700 without omission, and the illuminance of the light is measured by an illuminance monitor 61. In this case, a mirror may be used instead of the lens 700. According to such a configuration, all the light irradiated onto the workpiece W can be captured, so that accurate illuminance adjustment becomes possible. That is, by adjusting the illuminance of the lamp, variations in the average exposure amount can be suppressed.

[0063] Also, in order to reduce the stop time during "Step" of the workpiece W, a "Sweep" operation may be performed during "Step" to perform an exposure process. In this case, as shown in FIG. 17(a), when the light source 41 is "Swept" from the left side to the right side in the figure, the scanning path rises to the upper right, and as shown in FIG. 17(b), when the light source 41 is "Swept" from the right side to the left side in the figure, the scanning path rises to the upper left. In order to secure a desired line illuminance distribution with such an oblique locus, it is necessary to swing the angle of the opening portion 54x of the light shielding plate 54 for each "Sweep" direction. Also, it is necessary to perform overlapping exposure for uniform exposure. In this embodiment, overlapping exposure is performed in which the "Sweep" operation is repeated while sandwiching a "Step" operation in a predetermined one direction over the entire range of the irradiation target on the substrate, but conditions such as the direction angle and speed of the "sweep" operation may be limited and difficult. Therefore, as shown in FIGS. 18(a) and 18(b), the exposure locus of the forward path (FIG. 18(a)) is overlapped and exposed with the return path (see FIG. 18(b)). The locus marked with a broken line in FIG. 18(b) is the exposure locus of the forward path. Thus, it is necessary to repeat the reciprocation for the number of times of overlapping exposure.

[0064] Finally, various exemplary embodiments included in the present disclosure are described in [E1] to [E6] below.

[0065] [E1] A substrate support portion configured to be able to support a substrate on which a resist film is formed, A light source that irradiates irradiation light including vacuum ultraviolet light, An illuminance distribution shaping unit that shapes a line illuminance distribution that is a distribution along a second direction intersecting the first direction of a value obtained by integrating the illuminance distribution of the irradiation light over the first direction, and is partitioned by a plurality of straight lines connecting a pair of end points and one or a plurality of nodes between the pair of end points, A first moving mechanism that moves at least one of the substrate support portion and the light source so that the relative position of the light source with respect to the substrate moves at a constant speed in the first direction so that the irradiation region on the substrate irradiated with the irradiation light changes over time, A second moving mechanism that moves at least one of the substrate support portion and the light source so that the relative position of the light source with respect to the substrate moves in a second direction; A control unit that controls the first moving mechanism and the second moving mechanism; The control unit A first control for controlling the first moving mechanism so that the irradiation region is set along a first scanning path on the substrate, a second control for controlling the second moving mechanism after the first control, and a second control after the second control A third control for controlling the first moving mechanism so that the irradiation region is set along a second scanning path that partially overlaps the first scanning path; A substrate processing apparatus, wherein the distance in the second direction between the adjacent end points and the nodes, and the distance in the second direction between the adjacent nodes are integer multiples of the moving distance by the second moving mechanism in the second control.

[0066] [E2] The substrate processing apparatus according to [E1], wherein the illuminance distribution shaping unit is a light shielding plate that shapes the line illuminance distribution by allowing only the irradiation light to pass through an opening portion.

[0067] [E3] The light source has one or more lamps, The one or more lamps irradiate the irradiation light from above the light shielding plate toward the substrate provided below the light shielding plate. The substrate processing apparatus according to [E1] or [E2].

[0068] [E4] The substrate processing apparatus according to any one of [E1] to [E3], further comprising an illuminance monitor that is connected to the substrate support portion and is configured to be able to measure the illuminance of the irradiation light along the first scanning path and the irradiation light along the second scanning path.

[0069] [E5] The substrate processing apparatus according to [E2], wherein the opening portion has a discontinuous portion in the first direction.

[0070] [E6] The substrate processing apparatus according to [E2] or [E5], wherein the opening portion is formed asymmetrically in the second direction.

Description of Reference Numerals

[0071] 1... Substrate processing apparatus, 25... Work support portion (substrate support portion), 41... Light source, 54... Light shielding plate (illuminance distribution control portion), 54x... Opening portion, 61... Illuminance monitor, 70... Moving mechanism (second moving mechanism), 80... Moving mechanism (first moving mechanism), 100... Controller (control portion).

Claims

1. a substrate support configured to support a substrate on which a resist film is formed; a light source that irradiates irradiation light including vacuum ultraviolet light; an illuminance distribution shaping unit that shapes a line illuminance distribution which is a distribution along a second direction intersecting the first direction of a value obtained by integrating the illuminance distribution of the irradiation light over the first direction, and which is partitioned by a plurality of straight lines connecting a pair of end points and one or more nodes between the pair of end points; a first moving mechanism that moves at least one of the substrate support and the light source so that a relative position of the light source with respect to the substrate moves at a constant speed in the first direction such that an irradiation region on the substrate irradiated with the irradiation light changes over time; a second moving mechanism that moves at least one of the substrate support and the light source so that a relative position of the light source with respect to the substrate moves in the second direction; a control unit that controls the first moving mechanism and the second moving mechanism; and the control unit: performs a first control for controlling the first moving mechanism so that the irradiation region is set along a first scanning path on the substrate, a second control for controlling the second moving mechanism after the first control, and a third control for controlling the first moving mechanism so that the irradiation region is set along a second scanning path partially overlapping the first scanning path after the second control; a substrate processing apparatus, wherein a distance in the second direction between the adjacent end points and nodes, and a distance in the second direction between the adjacent nodes are integer multiples of a moving distance by the second moving mechanism in the second control.

2. The substrate processing apparatus according to claim 1, wherein the illuminance distribution shaping unit is a light shielding plate that shapes the line illuminance distribution by allowing only the irradiation light to pass through an opening portion.

3. The light source has one or more lamps, and the one or more lamps irradiate the irradiation light from above the light shielding plate toward the substrate provided below the light shielding plate. The substrate processing apparatus according to claim 2.

4. The substrate processing apparatus according to claim 1, further comprising an illuminance monitor that is connected to the substrate support and is configured to be able to measure the illuminance of the irradiation light during irradiation of the irradiation light along the first scanning path and during irradiation of the irradiation light along the second scanning path.

5. The substrate processing apparatus according to claim 2, wherein the opening portion has a discontinuous portion in the first direction.

6. The substrate processing apparatus according to claim 2, wherein the opening portion is formed asymmetrically in the second direction.

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