High frequency module

Abstract

To materialize miniaturization and cost reduction.SOLUTION: A high frequency module includes: a first external connection terminal electrically connected to a first external power source; a second external connection terminal electrically connected to a second external power source; a first switch having a one end electrically connected to the first external connection terminal and the other end electrically connected to a first node; a second switch having a first end electrically connected to the second external connection terminal and a second end electrically connected to the first node; a third external connection terminal electrically connected to the first node; and a third switch having a one end electrically connected to a second node between the second end of the second switch and the third external connection terminal. A first capacitor has a first end and a second end. The second end of the third switch is electrically connected to the first end of the first capacitor. The second node is electrically connected to the first end of the second capacitor. An inductor has a first and a second end, and the second end of the first capacitor and the second end of the second capacitor are electrically connected to the first end of the inductor. The second end of the inductor is electrically connected to a reference potential.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a high-frequency module.

Background Art

[0002] Patent Document 1 below describes a switching circuit configuration with two inputs and one output that switches between two power supplies.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In recent years, communication devices have come to be equipped with ultra-high-band (UHB) front-end modules in addition to low-band (LB) and mid-high-band (MHB). Examples of low-band include B8 and B28 of LTE (Long Term Evolution), and examples of the frequency band are 1 GHz or less, but the present disclosure is not limited thereto. Examples of mid-high-band include B39 and B41 of LTE, and examples of the frequency band are about 1.8 GHz to 2.7 GHz, but the present disclosure is not limited thereto. Examples of ultra-high-band include n77, n78, and n79 of 5GNR (5th Generation New Radio), and examples of the frequency band are about 3.3 GHz to 5 GHz, but the present disclosure is not limited thereto.

[0005] As described above, communication devices are equipped with a plurality of front-end modules (FEMs) corresponding to a plurality of bands respectively. And, for the purpose of miniaturization and cost reduction of communication devices, the power supplies of the plurality of front-end modules have been made common.

[0006] However, when sharing the power supply of multiple front-end modules, there is a problem that the harmonics output from the transmission system of one front-end module pass through the power supply line and reduce the reception sensitivity of other front-end modules.

[0007] To solve this problem, conventionally, a T-shaped switch has been used to ensure isolation between multiple front-end modules. However, the T-shaped switch has a configuration with a total of three switches, namely two series switches and one shunt switch. Therefore, the size of the semiconductor device in which the T-shaped switch is formed becomes large, and the cost becomes high. As a result, there has been a problem that the size of the high-frequency module becomes large and the cost becomes high.

[0008] The present disclosure has been made in view of the above, and aims to reduce the size and cost of a high-frequency module.

Means for Solving the Problem

[0009] The high-frequency module according to one aspect of the present disclosure includes a first external connection terminal electrically connected to a first external power supply, a second external connection terminal electrically connected to a second external power supply, a first switch having one end electrically connected to the first external connection terminal and the other end electrically connected to a first connection point, a second switch having one end electrically connected to the second external connection terminal and the other end electrically connected to the first connection point, a third external connection terminal electrically connected to the first connection point, and a third switch having one end electrically connected to a second connection point between the other end of the second switch and the third external connection terminal. The other end of the third switch is electrically connected to one end of a first capacitor, the second connection point is electrically connected to one end of a second capacitor, the other ends of the first capacitor and the second capacitor are electrically connected to one end of an inductor, and the other end of the inductor is electrically connected to a reference potential.

Effect of the Invention

[0010] According to the present disclosure, miniaturization and cost reduction of a high-frequency module are possible.

Brief Description of the Drawings

[0011]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Embodiments for Carrying Out the Invention

[0012] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. Note that the present invention is not limited by this embodiment. Each embodiment is an example, and it goes without saying that partial substitution or combination of the configurations shown in different embodiments is possible. In the following embodiments from the second embodiment onwards, descriptions of matters common to the first embodiment will be omitted, and only different points will be described. In particular, the same operational effects due to the same configuration will not be sequentially mentioned for each embodiment.

[0013] <First Embodiment> (Configuration Example of a Communication Device Having a Plurality of Front-End Modules) FIG. 1 is a diagram showing a configuration example of a communication device having a plurality of front-end modules.

[0014] The communication device 1 includes a low-band front-end module 11, an n77 front-end module 12, an n79 front-end module 13, a mid-high-band front-end module 14, a power supply circuit 15, and a power supply circuit 16.

[0015] The n77 front-end module 12 corresponds to an example of the "high-frequency module" of the present disclosure.

[0016] Examples of the low band include B8 and B28 of LTE (Long Term Evolution), and an example of the frequency band is 1 GHz or less, but the present disclosure is not limited thereto. Examples of the mid-high band include B39 and B41 of LTE, and an example of the frequency band is about 1.8 GHz to 2.7 GHz, but the present disclosure is not limited thereto.

[0017] In the communication device 1, the power supply circuit 15 supplies power to the low-band front-end module 11 via the wiring 21. Also, the power supply circuit 15 supplies power to the n77 front-end module 12 via the wiring 21.

[0018] The n77 front-end module 12 includes a switch circuit 31. The power supply circuit 15 supplies power to the n79 front-end module 13 via the wiring 21 and the switch circuit 31.

[0019] The power supply circuit 16 supplies power to the n77 front-end module 12 via the wiring 22. Also, the power supply circuit 16 supplies power to the n79 front-end module 13 via the wiring 22 and the switch circuit 31. Also, the power supply circuit 16 supplies power to the mid-high-band front-end module 14 via the wiring 22.

[0020] (First operation of the communication device) Consider the case where the n77 front-end module 12 and / or the n79 front-end module 13 and the middle-high band front-end module 14 operate simultaneously. In this case, the power supply circuit 15 supplies power to the n77 front-end module 12 and / or the n79 front-end module 13 via the wiring 21, and the power supply circuit 16 supplies power to the middle-high band front-end module 14 via the wiring 22.

[0021] At this time, as shown by the arrow 41, the harmonic of the middle-high band signal (a high-frequency signal in the ultra-high band frequency band) is transmitted from the middle-high band front-end module 14 to the n77 front-end module 12 and / or the n79 front-end module 13 via the wiring 22. As a result, the reception sensitivity of the n77 front-end module 12 and / or the n79 front-end module 13 decreases.

[0022] (Second operation of the communication device) Consider the case where the low band front-end module 11 and the n77 front-end module 12 and / or the n79 front-end module 13 operate simultaneously. In this case, the power supply circuit 15 supplies power to the low band front-end module 11 via the wiring 21, and the power supply circuit 16 supplies power to the n77 front-end module 12 and / or the n79 front-end module 13 via the wiring 22.

[0023] At this time, as shown by the arrow 42, the harmonic of the low band signal (a high-frequency signal in the ultra-high band frequency band) is transmitted from the low band front-end module 11 to the n77 front-end module 12 and / or the n79 front-end module 13 via the wiring 21. As a result, the reception sensitivity of the n77 front-end module 12 and / or the n79 front-end module 13 decreases.

[0024] (Third operation of the communication device) Consider the case where the low-band front-end module 11 and the middle-high band front-end module 14 operate simultaneously. In this case, the power supply circuit 15 supplies power to the low-band front-end module 11 via the wiring 21, and the power supply circuit 16 supplies power to the middle-high band front-end module 14 via the wiring 22.

[0025] At this time, as indicated by the arrow 43, the harmonic of the low-band signal (a high-frequency signal in the middle-high band frequency band) is transmitted from the low-band front-end module 11 to the middle-high band front-end module 14 via the wiring 21, the switch circuit 31, and the wiring 22. As a result, the reception sensitivity of the middle-high band front-end module 14 decreases.

[0026] In order to suppress the transmission of such harmonics, the switch circuit 31 needs to ensure isolation between a plurality of front-end modules.

[0027] (Comparative Example) FIG. 2 is a diagram showing the configuration of the switch circuit of the comparative example.

[0028] The switch circuit 100 has terminals from 100a to 100c. The terminal 100a is electrically connected to the wiring 21 (see FIG. 1). The terminal 100b is electrically connected to the wiring 22 (see FIG. 1). The terminal 100c is electrically connected to the internal circuit (for example, the power amplifier 210) of the n77 front-end module 12 and the n79 front-end module 13 via the wiring 200.

[0029] The switch circuit 100 includes a T-shaped switch 110 and a T-shaped switch 111. The T-shaped switch 110 includes switches from 121 to 123. The T-shaped switch 111 includes switches from 131 to 133.

[0030] One end of switch 121 is electrically connected to terminal 100a. The other end of switch 121 is electrically connected to one end of switch 122 and one end of switch 123. The other end of switch 122 is electrically connected to terminal 100c. The other end of switch 123 is electrically connected to the reference potential.

[0031] One end of switch 131 is electrically connected to terminal 100b. The other end of switch 131 is electrically connected to one end of switch 132 and one end of switch 133. The other end of switch 132 is electrically connected to terminal 100c. The other end of switch 133 is electrically connected to the reference potential.

[0032] (First operation of the comparative example) Consider the case where the n77 front-end module 12 and / or the n79 front-end module 13 and the middle-high-band front-end module 14 (see FIG. 1) operate simultaneously. In this case, the power supply circuit 15 (see FIG. 1) supplies power to the n77 front-end module 12 and / or the n79 front-end module 13 via the wiring 21, and the power supply circuit 16 (see FIG. 1) supplies power to the middle-high-band front-end module 14 via the wiring 22.

[0033] In this case, switches 121 and 122 are turned on. Also, switch 123 is turned off. As a result, the power output from the power supply circuit 15 is supplied to the inside of the n77 front-end module 12 and / or the n79 front-end module 13 via the wiring 21, switch 121, and switch 122.

[0034] At this time, switch 131 and switch 132 turn off. Also, switch 133 turns on. Note that when switch 131 is off, it can cut off the power supply from power circuit 16, but allows the harmonics of the middle high-band signal (high-frequency signals in the ultra-high-band frequency band, see arrow 41 in FIG. 1) to pass through. However, switch 133 shunts the harmonics of the middle high-band signal (high-frequency signals in the ultra-high-band frequency band) that have passed through switch 131 to the reference potential.

[0035] In this way, since T-type switch 111 can shunt the harmonics of the middle high-band signal (high-frequency signals in the ultra-high-band frequency band) to the reference potential, isolation between n77 front-end module 12 and / or n79 front-end module 13 and middle high-band front-end module 14 can be ensured.

[0036] (Second operation of the comparative example) Consider the case where low-band front-end module 11 (see FIG. 1) and n77 front-end module 12 and / or n79 front-end module 13 operate simultaneously. In this case, power circuit 15 (see FIG. 1) supplies power to low-band front-end module 11 via wiring 21, and power circuit 16 (see FIG. 1) supplies power to n77 front-end module 12 and / or n79 front-end module 13 via wiring 22.

[0037] In this case, switch 131 and switch 132 turn on. Also, switch 133 turns off. As a result, the power output from power circuit 16 is supplied to the inside of n77 front-end module 12 and / or n79 front-end module 13 via wiring 22, switch 131, and switch 132.

[0038] At this time, switch 121 and switch 122 are in the off state. Also, switch 123 is in the on state. Note that when switch 121 is in the off state, it can cut off the power supply from power circuit 15, but allows the harmonics of the low band signal (high frequency signals in the ultra-high band frequency range, see arrow 42 in FIG. 1) to pass through. However, switch 123 shunts the harmonics of the low band signal (high frequency signals in the ultra-high band frequency range) that have passed through switch 121 to the reference potential.

[0039] In this way, since T-type switch 110 can shunt the harmonics of the low band signal (high frequency signals in the ultra-high band frequency range) to the reference potential, isolation between low band front-end module 11 and n77 front-end module 12 and / or n79 front-end module 13 can be ensured.

[0040] (Third operation of the comparative example) Consider the case where low band front-end module 11 (see FIG. 1) and middle high band front-end module 14 (see FIG. 1) operate simultaneously. In this case, power circuit 15 (see FIG. 1) supplies power to low band front-end module 11 via wiring 21, and power circuit 16 (see FIG. 1) supplies power to middle high band front-end module 14 via wiring 22.

[0041] In this case, switch 121 and switch 122 are in the off state. Also, switch 123 is in the on state. Also, switch 131 and switch 132 are in the off state. Also, switch 133 is in the on state.

[0042] Note that when switch 121 is in the off state, it can cut off the power supply from power circuit 15, but allows the harmonics of the low band signal (high frequency signals in the middle high band frequency range, see arrow 43 in FIG. 1) to pass through. However, switch 123 shunts the harmonics of the low band signal (high frequency signals in the middle high band frequency range) that have passed through switch 121 to the reference potential.

[0043] In this way, since the T-shaped switch 110 can shunt the harmonics of the low-band signal (high-frequency signals in the middle-high band frequency range) to the reference potential, isolation between the low-band front-end module 11 and the middle-high band front-end module 14 can be ensured.

[0044] (Problems of the Comparative Example) The T-shaped switch 110 includes three switches from switch 121 to switch 123. The T-shaped switch 111 includes three switches from switch 131 to switch 133. That is, the switch circuit 100 includes a total of six switches. Therefore, the switch circuit 100 is large in size and high in cost.

[0045] (First Embodiment) FIG. 3 is a diagram showing the configuration of the switch circuit according to the first embodiment.

[0046] The switch circuit 31 has terminals 31a to 31c. The terminal 31a is electrically connected to the wiring 21 (see FIG. 1). The terminal 31b is electrically connected to the wiring 22 (see FIG. 1). The terminal 31c is electrically connected to the internal circuit (for example, the power amplifier 210) of the n77 front-end module 12 and the n79 front-end module 13 via the wiring 200.

[0047] The terminal 31a corresponds to an example of the "first external connection terminal" of the present disclosure. The terminal 31b corresponds to an example of the "second external connection terminal" of the present disclosure. The terminal 31c corresponds to an example of the "third external connection terminal" of the present disclosure.

[0048] The switch circuit 31 includes switches 51 to 53.

[0049] Switch 51 corresponds to an example of the "first switch" of the present disclosure. Switch 52 corresponds to an example of the "second switch" of the present disclosure. Switch 53 corresponds to an example of the "third switch" of the present disclosure.

[0050] The switch circuit 31 may be a single semiconductor device.

[0051] One end of switch 51 is electrically connected to terminal 31a. The other end of switch 51 is electrically connected to node N1. Node N1 is electrically connected to terminal 31c.

[0052] Node N1 corresponds to an example of the "first connection point" of the present disclosure.

[0053] One end of switch 52 is electrically connected to terminal 31b. The other end of switch 52 is electrically connected to node N2. Node N2 is electrically connected to node N1.

[0054] Node N2 corresponds to an example of the "second connection point" of the present disclosure.

[0055] One end of switch 53 is electrically connected to node N2. The other end of switch 53 is electrically connected to one end of a capacitor 61 mounted on the substrate of the n77 front-end module 12.

[0056] One end of a capacitor 62 mounted on the substrate of the n77 front-end module 12 is electrically connected to node N2.

[0057] The other end of capacitor 61 and the other end of capacitor 62 are electrically connected to one end of an inductor 63 mounted on the substrate of the n77 front-end module 12. The other end of inductor 63 is electrically connected to the reference potential.

[0058] Capacitor 61 corresponds to an example of the "first capacitor" of the present disclosure. Capacitor 62 corresponds to an example of the "second capacitor" of the present disclosure. Inductor 63 corresponds to an example of the "inductor" of the present disclosure.

[0059] Switch 53, capacitor 61, capacitor 62, and inductor 63 constitute filter 71.

[0060] Filter 71 suppresses the harmonics transmitted to node N2 (see arrows 41, 42, and 43 in FIG. 1).

[0061] When switch 53 is in the off state, filter 71 is a low-pass filter in which capacitor 62 and inductor 63 are connected in series. When switch 53 is in the on state, filter 71 is a low-pass filter in which the parallel connection of capacitor 61 and capacitor 62 and inductor 63 are connected in series. That is, filter 71 is a variable low-pass filter whose poles change according to the on state and off state of switch 53.

[0062] When switch 53 is in the off state, the capacitance of the capacitor in filter 71 is smaller than when switch 53 is in the on state. Therefore, the poles of filter 71 are relatively located on the high-frequency side when switch 53 is in the off state, and relatively located on the low-frequency side when switch 53 is in the on state.

[0063] FIGS. 4 and 5 are diagrams showing the circuit simulation results of the switch circuit of the first embodiment. Specifically, FIG. 4 is a diagram showing the circuit simulation results of switch circuit 31 when switch 53 is in the off state. FIG. 5 is a diagram showing the circuit simulation results of switch circuit 31 when switch 53 is in the on state.

[0064] In FIGS. 4 and 5, the frequency band 301 is a mid-high band frequency band (for example, from 1.805 GHz to 2.690 GHz). The frequency band 302 is an ultra-high band (for example, from n77 (3.300 GHz) to n79 (5.000 GHz)) frequency band.

[0065] Referring to FIG. 4, as shown by line 300, when the switch 53 is in the off state, the switch circuit 31 can suppress the high-frequency signal in the frequency band 302.

[0066] Referring to FIG. 5, as shown by line 303, when the switch 53 is in the on state, the switch circuit 31 can suppress the high-frequency signal in the frequency band 301.

[0067] Referring back to FIG. 3, the operation of the switch circuit 31 will be described.

[0068] (First Operation of the First Embodiment) Consider the case where the n77 front-end module 12 and / or the n79 front-end module 13 and the mid-high band front-end module 14 (see FIG. 1) operate simultaneously. In this case, the power supply circuit 15 (see FIG. 1) supplies power to the n77 front-end module 12 and / or the n79 front-end module 13 via the wiring 21, and the power supply circuit 16 (see FIG. 1) supplies power to the mid-high band front-end module 14 via the wiring 22.

[0069] In this case, the switch 51 is turned on. Also, the switch 52 is turned off. Also, the switch 53 is turned off. As a result, the power output from the power supply circuit 15 is supplied to the inside of the n77 front-end module 12 and / or the n79 front-end module 13 via the wiring 21 and the switch 51.

[0070] Note that when the switch 52 is in the off state, it can cut off the power supply from the power circuit 16, but allows the harmonic of the middle high-band signal (a high-frequency signal in the ultra-high-band frequency band, see the arrow 41 in Fig. 1) to pass through.

[0071] However, since the switch 53 is in the off state, the filter 71 suppresses the harmonic of the middle high-band signal (a high-frequency signal in the ultra-high-band frequency band) as shown in Fig. 4.

[0072] In this way, since the switch circuit 31 can suppress the harmonic of the middle high-band signal (a high-frequency signal in the ultra-high-band frequency band), isolation between the n77 front-end module 12 and / or the n79 front-end module 13 and the middle high-band front-end module 14 can be ensured.

[0073] (Second operation of the first embodiment) Consider the case where the low-band front-end module 11 (see Fig. 1) and the n77 front-end module 12 and / or the n79 front-end module 13 operate simultaneously. In this case, the power circuit 15 (see Fig. 1) supplies power to the low-band front-end module 11 via the wiring 21, and the power circuit 16 (see Fig. 1) supplies power to the n77 front-end module 12 and / or the n79 front-end module 13 via the wiring 22.

[0074] In this case, the switch 51 is in the off state. Also, the switch 52 is in the on state. Also, the switch 53 is in the off state. As a result, the power output from the power circuit 16 is supplied to the inside of the n77 front-end module 12 and / or the n79 front-end module 13 via the wiring 22 and the switch 52.

[0075] Note that when the switch 51 is in the off state, it can cut off the power supply from the power circuit 15, but there is a possibility that it may allow the harmonic of the low band signal (a high frequency signal in the ultra-high band frequency range, see the arrow 42 in FIG. 1) to pass through.

[0076] However, since the switch 53 is in the off state, the filter 71 suppresses the harmonic of the low band signal (a high frequency signal in the ultra-high band frequency range) as shown in FIG. 4.

[0077] In this way, since the switch circuit 31 can suppress the harmonic of the low band signal (a high frequency signal in the ultra-high band frequency range), isolation between the low band front-end module 11 and the n77 front-end module 12 and / or the n79 front-end module 13 can be ensured.

[0078] (Third operation of the first embodiment) Consider the case where the low band front-end module 11 (see FIG. 1) and the middle high band front-end module 14 (see FIG. 1) operate simultaneously. In this case, the power circuit 15 (see FIG. 1) supplies power to the low band front-end module 11 via the wiring 21, and the power circuit 16 (see FIG. 1) supplies power to the middle high band front-end module 14 via the wiring 22.

[0079] In this case, the switch 51 is in the off state. Also, the switch 52 is in the off state. Also, the switch 53 is in the on state.

[0080] Note that when the switch 51 is in the off state, it can cut off the power supply from the power circuit 15, but it allows the harmonic of the low band signal (a high frequency signal in the middle high band frequency range, see the arrow 43 in FIG. 1) to pass through.

[0081] However, since the switch 53 is in the on state, the filter 71 suppresses the harmonic of the low band signal (a high frequency signal in the middle high band frequency range) as shown in FIG. 5.

[0082] In this way, since the switch circuit 31 can suppress the harmonics of the low band signal (high frequency signal in the middle high band frequency band), isolation between the low band front end module 11 and the middle high band front end module 14 can be ensured.

[0083] (Effect) In the switch circuit 100 of the comparative example, although the harmonics transmitted to the wiring 21 are shunted to the reference potential by the switch 123, the switches 121 and 122 are necessary to block the power supply voltage (DC voltage) supplied from the power supply circuit 15 and the power supply circuit 16. Similarly, in the switch circuit 100, although the harmonics transmitted to the wiring 22 are shunted to the reference potential by the switch 133, the switches 131 and 132 are necessary to block the power supply voltage (DC voltage) supplied from the power supply circuit 15 and the power supply circuit 16. Therefore, the switch circuit 100 requires six switches from the switch 121 to the switch 123 and from the switch 131 to the switch 133.

[0084] On the other hand, in the switch circuit 31 of the first embodiment, the harmonics transmitted to the wiring 21 and the wiring 22 are suppressed by the filter 71. The filter 71 includes the capacitor 61 and the capacitor 62. The capacitor 61 and the capacitor 62 can block the power supply voltage (DC voltage) supplied from the power supply circuit 15 and the power supply circuit 16. Therefore, the switch circuit 31 does not require a switch for blocking the power supply voltage (DC voltage) supplied from the power supply circuit 15 and the power supply circuit 16.

[0085] Also, the filter 71 can switch between suppressing high frequency signals in the ultra high band frequency band and suppressing high frequency signals in the middle high band frequency band by turning the switch 53 on or off. The filter 71 does not require another control line or control method for switching.

[0086] As described above, the switch circuit 31 can be implemented with three switches from switch 51 to switch 53.

[0087] In this way, compared with the switch circuit 100, the switch circuit 31 can reduce the number of switches from six to three, so miniaturization and cost reduction are possible. Therefore, the n77 front-end module 12 can be miniaturized and cost-reduced.

[0088] <Second Embodiment> (Configuration) FIG. 6 is a diagram showing the configuration of the switch circuit according to the second embodiment.

[0089] The switch circuit 31A according to the second embodiment further includes a capacitor 61 and a capacitor 62 compared with the switch circuit 31 (see FIG. 3) of the first embodiment. That is, from switch 51 to switch 53, the capacitor 61 and the capacitor 62 may be included in one semiconductor device.

[0090] (Effect) The switch circuit 31A can reduce the number of components compared with the switch circuit 31. Thereby, the n77 front-end module 12 can be further miniaturized and cost-reduced.

[0091] <Third Embodiment> (Configuration) FIG. 7 is a diagram showing the configuration of the switch circuit according to the third embodiment.

[0092] The switch circuit 31B according to the third embodiment further includes an inductor 63 compared with the switch circuit 31A (see FIG. 6) of the second embodiment. That is, from switch 51 to switch 53, the capacitor 61, the capacitor 62, and the inductor 63 may be included in one semiconductor device.

[0093] (Effect) The switch circuit 31B can further reduce the number of components compared to the switch circuit 31A. As a result, the n77 front-end module 12 can be further miniaturized and cost-reduced.

[0094] <Fourth Embodiment> (Configuration) FIG. 8 is a diagram showing the configuration of the switch circuit according to the fourth embodiment.

[0095] The switch circuit 31C according to the fourth embodiment further includes an inductor 63 compared to the switch circuit 31 (see FIG. 3) according to the first embodiment. That is, the switches 51 to 53 and the inductor 63 may be included in one semiconductor device.

[0096] (Effect) The switch circuit 31C can reduce the number of components compared to the switch circuit 31. As a result, the n77 front-end module 12 can be further miniaturized and cost-reduced.

[0097] <Configuration Example of the Present Disclosure> The present disclosure can also take the following configuration.

[0098] (1) A first external connection terminal electrically connected to a first external power supply, A second external connection terminal electrically connected to a second external power supply, A first switch having one end electrically connected to the first external connection terminal and the other end electrically connected to a first connection point, A second switch having one end electrically connected to the second external connection terminal and the other end electrically connected to the first connection point, A third external connection terminal electrically connected to the first connection point, A third switch having one end electrically connected to a second connection point between the other end of the second switch and the third external connection terminal, including The other end of the third switch is electrically connected to one end of a first capacitor, The second connection point is electrically connected to one end of a second capacitor, the other end of the first capacitor and the other end of the second capacitor are electrically connected to one end of an inductor, and the other end of the inductor is electrically connected to a reference potential. High-frequency module.

[0099] (2) The high-frequency module according to (1) above, wherein the first switch, the second switch, the third switch, the first capacitor, the second capacitor and the inductor are included in one semiconductor device. High-frequency module.

[0100] (3) The high-frequency module according to (1) above, wherein the first switch, the second switch, the third switch, the first capacitor and the second capacitor are included in one semiconductor device. High-frequency module.

[0101] (4) The high-frequency module according to (1) above, wherein the first switch, the second switch, the third switch and the inductor are included in one semiconductor device. High-frequency module.

[0102] (5) The high-frequency module according to any one of (1) to (4) above, wherein when the first switch is in an on state, the third switch is in an off state, when the second switch is in an on state, the third switch is in an off state, and when the first switch and the second switch are in off states, the third switch is in an on state. High-frequency module.

[0103] Note that the above-described embodiments are for facilitating the understanding of the present invention and are not for limiting the interpretation of the present invention. The present invention can be changed / improved without departing from its gist, and equivalents thereof are also included in the present invention.

Explanation of Reference Numerals

[0104] 1 Communication device 11 Low-band front-end module 12 n77 front-end module 13 n79 front-end module 14 Middle-high-band front-end module 15, 16 Power supply circuit 31 Switch circuit 51, 52, 53 Switches 61, 62 Capacitors 63 Inductor

Claims

1. A first external connection terminal electrically connected to a first external power supply, A second external connection terminal electrically connected to a second external power supply, A first switch having one end electrically connected to the first external connection terminal and the other end electrically connected to a first connection point, A second switch having one end electrically connected to the second external connection terminal and the other end electrically connected to the first connection point, A third external connection terminal electrically connected to the first connection point, A third switch having one end electrically connected to a second connection point between the other end of the second switch and the third external connection terminal, comprising The other end of the third switch is electrically connected to one end of a first capacitor, The second connection point is electrically connected to one end of a second capacitor, The other end of the first capacitor and the other end of the second capacitor are electrically connected to one end of an inductor, The other end of the inductor is electrically connected to a reference potential, A high-frequency module.

2. The high-frequency module according to claim 1, wherein the first switch, the second switch, the third switch, the first capacitor, the second capacitor and the inductor are included in one semiconductor device, A high-frequency module.

3. The high-frequency module according to claim 1, wherein the first switch, the second switch, the third switch, the first capacitor and the second capacitor are included in one semiconductor device, A high-frequency module.

4. The high-frequency module according to claim 1, The first switch, the second switch, the third switch, and the inductor are included in one semiconductor device. High-frequency module.

5. The high-frequency module according to any one of claims 1 to 4, when the first switch is in the on state, the third switch is in the off state; when the second switch is in the on state, the third switch is in the off state; when the first switch and the second switch are in the off state, the third switch is in the on state. High-frequency module.

Images