Modular recipe controlled calibration (MRCC) apparatus used to balance plasma in multiple station systems

Abstract

To provide a modular recipe controlled calibration (MRCC) apparatus used to balance plasma in multiple station systems.SOLUTION: A MRCC circuit 500A for automatic tuning of RF power includes a low frequency (LF) to mid frequency (MF) (LF / HF) tuning circuit 701 including a variable LF / MF capacitor 530 coupled in series with a LF / MF inductor 520. The LF / MF tuning circuit is coupled between the ground and a common node 510 for receiving RF input. The circuit also includes a high frequency (HF) tuning circuit 702 coupled in parallel with the LF / MF tuning circuit between the ground and the common node. The HF tuning circuit includes a variable HF capacitor 535 coupled in series with a HF inductor 525.SELECTED DRAWING: Figure 5A

Description

Technical Field

[0001] This embodiment relates to a semiconductor substrate processing equipment tool, and more specifically, to a modular recipe control calibration (MRCC) device used to equalize plasma across multiple stations in a semiconductor processing system.

Background Art

[0002] In a multi-station semiconductor processing system that includes those that perform deposition, the input RF power is split and distributed to multiple stations. In particular, the input RF power is split using one module or box for all stations. That is, after splitting the RF power, no adjustments can be made for each station. Using a single control box makes it impossible to control the RF power supplied to each station to achieve any desired power distribution (equalized or not).

[0003] In addition, the real estate within the module used to split the RF power may be limited, and the module splits the input RF power and distributes it to multiple stations. This can become increasingly difficult to meet clearance and creepage distance limitations, thereby posing a problem as it creates a risk of arcing within the internal circuitry.

[0004] Furthermore, current techniques use series elements to regulate the output RF power supplied via low-frequency to medium-frequency RF power and / or high-frequency RF power. However, due to the nature of the topology, when adjusting the output RF power, there is no insulation between the circuit elements used for the adjustment. That is, when adjusting the low-frequency to medium-frequency RF power, it affects the high-frequency RF power, and conversely, when adjusting the high-frequency RF power, it affects the low-frequency to medium-frequency RF power. To address the lack of insulation, additional circuit elements may be required. However, this would require increasing the volume of the module used for splitting the RF power, which is not always possible. Also, the additional circuitry may create a risk of very high voltages due to series resonance.

[0005] In addition, current techniques perform manual adjustment of capacitive elements within the module used for splitting RF power, and the module splits the input RF power and distributes it to multiple stations. However, once the capacitive elements are set, the position (and value) of the capacitors is not monitored further. That is, there is no active adjustment of the RF power once the capacitive elements are set. Furthermore, when the communication is disconnected from the system or power cycle, the position of the last capacitor is unknown.

[0006] The background description provided herein is for the purpose of generally indicating the context of the present disclosure. The research of the presently named inventors, to the extent it is not described in this background art, is not to be regarded as prior art to the present disclosure, whether explicitly or implicitly, any more than aspects of the description that are not considered prior art at the time of filing.

[0007] Embodiments of the present disclosure occur in this context. SUMMARY OF THE INVENTION

[0008] This embodiment relates to solving one or more problems found in related technologies, specifically, providing recipe-controlled radio frequency (RF) power regulation in a modular fashion to each station of a processing chamber. Embodiments of several inventions of the present disclosure will be described below.

[0009] Embodiments of the present disclosure include a circuit for adjusting RF power. This circuit includes a low-frequency (LF) / medium-frequency (MF) adjustment circuit that includes a variable LF / MF capacitor coupled in series with a LF / MF inductor. The LF / MF adjustment circuit is configured to operate between approximately 5 kHz (kilohertz) and 400 kHz in the low-frequency range and from 300 kHz to 3 MHz (megahertz) or more in the medium-frequency range. The LF / MF adjustment circuit is coupled between ground and a common node configured to receive an RF input. This circuit includes a high-frequency (HF) adjustment circuit coupled in parallel with the LF / MF adjustment circuit between ground and the common node. The HF adjustment circuit includes a variable HF capacitor coupled in series with an HF inductor. When adjusting the variable LF / MF capacitor, the HF adjustment circuit is isolated from the LF / MF adjustment circuit. In addition, when adjusting the variable HF capacitor, the LF / MF adjustment circuit is isolated from the HF adjustment circuit. That is, when adjusting the variable LF / MF capacitor or the variable HF capacitor, cross-parallel insulation occurs between the LF / MF inductor of the LF / MF adjustment circuit and the HF inductor of the HF adjustment circuit.

[0010] Other embodiments of the present disclosure include an apparatus for adjusting RF power. The apparatus includes an RF dual-source power generator that includes an LF / MF power generator that provides LF / MF power from a low frequency to a medium frequency and an HF power generator that provides HF power at a high frequency. For example, the LF / MF power generator is configured to operate between about 5 kHz (kilohertz) and 400 kHz in the low frequency range and / or between 300 kHz and 3 MHz or more (megahertz) in the medium frequency range, depending on its configuration. The apparatus includes a split input RF (SIRF) distribution box configured to receive LF / MF power and receive HF power. The SIRF distribution box is further configured to distribute at least one of the LF / MF power and the HF power in combination as one or more split RF inputs. The apparatus includes one or more modular remote control calibration (MRCC) circuits for one or more processing stations. Each MRCC circuit includes an LF / MF adjustment circuit coupled in parallel with an HF adjustment circuit between ground and a corresponding common node configured to receive a corresponding split RF input. The LF / MF adjustment circuit includes a variable LF / MF capacitor coupled in series with an LF / MF inductor, and the LF / MF adjustment circuit is coupled between ground and the corresponding common node. The HF adjustment circuit includes a variable HF capacitor coupled in series with an HF inductor, and the HF adjustment circuit is coupled between ground and the corresponding common node. The corresponding common node is configured to provide a corresponding RF output to the corresponding station after adjustment. When adjusting the variable LF / MF capacitor or the variable HF capacitor, cross-parallel insulation occurs between the LF / MF inductor of the LF / MF adjustment circuit and the HF inductor of the HF adjustment circuit.

[0011] Another embodiment of the present disclosure includes an assembly for use in a process chamber for depositing a film on a wafer. The assembly includes an RF dual-source power generator that includes an LF / MF generator that provides LF / MF power from a low frequency to a medium frequency and an HF power generator that provides HF power at a high frequency. For example, the LF / MF power generator is configured to operate in a low frequency range between about 5 kHz (kilohertz) and 400 kHz and / or in a medium frequency range between 300 kHz and 3 MHz or more (megahertz), depending on its configuration. The assembly includes a split input RF (SIRF) distribution box configured to receive the LF / MF power and receive the HF power. The SIRF distribution box is further configured to distribute at least one of the LF / MF power and the HF power in combination as a first split RF input, a second split RF input, a third split RF input, and a fourth split RF input. The assembly includes a first MRCC circuit for a first processing station, a second MRCC circuit for a second processing station, a third MRCC circuit for a third processing station, and a fourth MRCC circuit for a fourth processing station. Each MRCC circuit includes an LF / MF tuning circuit coupled in parallel with an HF tuning circuit between ground and a corresponding common node configured to receive a corresponding split RF input. The LF / MF tuning circuit includes a variable LF / MF capacitor coupled in series with an LF / MF inductor, and the LF / MF tuning circuit is coupled between ground and the corresponding common node. The HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor, and the HF tuning circuit is coupled between ground and the corresponding common node. The corresponding common node is configured to provide a corresponding RF output to the corresponding station after tuning. When adjusting the variable LF / MF capacitor or the variable HF capacitor, cross-parallel insulation occurs between the LF / MF inductor of the LF / MF tuning circuit and the HF inductor of the HF tuning circuit.

[0012] These and other advantages will be understood by those skilled in the art upon reading the entire specification and claims.

[0013] The embodiments may best be understood by reference to the following description taken in conjunction with the accompanying drawings.

Brief Description of the Drawings

[0014]

Figure 1A

[0015]

Figure 1B

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Figure 2

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Figure 3

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Figure 4A

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Figure 4B

[0020]

Figure 5A

[0021]

Figure 5A-1

[0022]

Figure 5B

[0023]

Figure 5C

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Figure 5D

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Figure 5E

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Figure 5F

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Figure 6

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Figure 7A

[0029]

Figure 7B

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Figure 7C

[0031]

Figure 8

DETAILED DESCRIPTION OF THE INVENTION

[0032] The following detailed description includes many specific details for illustrative purposes, but those skilled in the art will understand that many variations and modifications to the following details are within the scope of the present disclosure. Accordingly, the aspects of the present disclosure described below are described without loss of generality and without imposing limitations on the claims that follow this description.

[0033] Generally speaking, various embodiments of the present disclosure describe systems and methods for providing a standardized distribution of RF power to a plurality of stations. In particular, a plasma enhanced chemical vapor deposition (PECVD) multi-station plasma module uses RF energy to deposit or etch a film on a wafer (e.g., a 300 mm wafer, etc.). Each station is supplied with either only high frequency, a combination of high frequency and low to medium frequency energy, or a combination thereof. Due to the nature of the plasma, its impedance is dynamic, so it is necessary to actively adjust the RF power to the stations in order to standardize the RF power supplied to the plasma. That is, the impedance of the plasma (which functions as a load) affects the supply of RF power. In an embodiment, a modular remote control calibration (MRCC) system achieves a standardized distribution of RF power to each of the stations in a multi-station plasma system.

[0034] Advantages of the RF power supply system of embodiments of the present disclosure include a modular approach to supplying and regulating RF power to each station of a multi-station processing system. Since the impedance of the plasma in a particular station is constantly changing, even if the input RF power is split from an RF power source to supply multiple stations, a standardized power cannot be obtained. By providing RF power adjustment capabilities at each station (e.g., via the MRCC circuit / modules of the embodiments), the power supply can be increased or decreased as needed. In this way, individual control of the power and / or voltage to each station is provided. In addition, embodiments of the present disclosure provide isolation for RF power adjustment when adjusting either the LF / MF frequency or the HF frequency. In particular, the MRCC module uses two parallel circuits, one for adjusting from a low frequency to a medium frequency and the other for high frequency adjustment, to vary the impedance of a load (e.g., a plasma). These parallel circuits are designed such that adjusting one frequency does not affect the other frequency. Further, embodiments of the present disclosure use an absolute encoder to track the position of each capacitor. In that way, the position information of the capacitor is not lost. In addition, embodiments of the present disclosure use a clam shell design of the MRCC module that allows an assembler to access the internal components on three sides of the module. This reduces the assembly time and construction cost. Further, embodiments of the present disclosure use a floating motor mount to counter axial misalignment between the capacitor and the actuator that rotates the capacitor. This prevents the capacitor from burning due to misalignment.

[0035] With the above general understanding of the various embodiments, exemplary details of the embodiments will be described with reference to the various drawings. Elements and / or components that are given the same number in one or more of the drawings are generally intended to have the same configuration and / or function. Further, the drawings may not be drawn to scale, but are intended to illustrate and emphasize new concepts. It will be apparent that the embodiments may be practiced without some or all of these specific details. In other instances, well-known process operations have not been described in detail in order not to unnecessarily obscure the embodiments.

[0036] Embodiments of the present disclosure relate to power supply in plasma process modules such as those used in plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD) processes. Embodiments of the present disclosure may be implemented with various process module configurations. Further, embodiments of the present disclosure are not limited to the examples provided herein and may be implemented in different plasma processing systems (e.g., inductively coupled systems, capacitively coupled systems, electron cyclotron resonance systems, microwave systems, etc.) that apply different configurations, shapes, and plasma generation techniques. Examples of plasma processing systems and plasma processing modules are disclosed in co-owned U.S. Pat. Nos. 8,862,855, 8,847,495, 8,485,128, and U.S. Patent Application No. 15 / 369,110.

[0037] FIG. 1A shows a reactor system 100A, which may be used to deposit a film on a substrate, such as one formed by a CVD (e.g., PECVD) or atomic layer deposition (ALD) process. The film deposition is preferably carried out in a PECVD system. As shown in the configuration of FIG. 1A, RF power is supplied to the pedestal 140, although in other embodiments, the power may be supplied by other means, such as via a showerhead. These reactors may utilize two or more heaters, and in this exemplary reactor, a common terminal configuration may be used to control the temperature for uniformity or custom settings. More specifically, FIG. 1A shows a substrate processing system 100A used to process a wafer 101. This system includes a chamber 102 having a lower chamber portion 102b and an upper chamber portion 102a. The central support pillar is configured to support a pedestal 140, which is a power supply electrode in one embodiment. The pedestal 140 is electrically coupled to an RF power source 104 via a matching network 106. The power source is controlled by a control module 110, such as a controller. The control module 110 is configured to operate the substrate processing system 100A by executing process input and control 108. The process input and control 108 may include a process recipe such as power level, timing parameters, process gas, mechanical movement of the wafer 101, etc., for example, to deposit or form a film on the wafer 101.

[0038] The substrate processing system 100A may include a plurality of processing stations. For example, the chamber 102 may include a plurality of processing stations, and each station has a pedestal for supporting the wafer 101. The RF power and frequency supplied by the matching network 106 are split and distributed by the distribution system 420. To adjust the amount of RF power supplied to each station, one or more MRCC tuners 415 are provided in a one-to-one relationship between the MRCC tuner 415 and the station. For example, in one embodiment, one or more MRCC tuners 415 can be configured to provide a normalized adjustment among the stations such that each station receives an equal amount of RF power. In another embodiment, one or more MRCC tuners 415 can be configured to provide the desired RF power to each of the stations, and the power supplied to each of the stations does not necessarily have to be equal.

[0039] One method includes calibrating the system using known good components and systems. A voltage probe (e.g., VI probe 417) is used to determine how feedback is returned to the corresponding MRCC tuner (e.g., tuner 415) to adjust the RF power supply to the corresponding station. For example, one VI probe 417 is used to determine the current and voltage of the corresponding station. Thus, during operation, the VI probe 107 can measure voltage fluctuations due to changes in the impedance of the plasma and can actively adjust the RF power to achieve the desired supply of RF power to the station during processing.

[0040] The central support also includes lift pins (not shown), each of which is actuated by a corresponding lift pin actuating ring 120 so as to be controlled by lift pin control 122. The lift pins are used to lift the wafer 101 from the pedestal 140 to enable the end effector to pick up the wafer and to lower the wafer 101 after it has been placed by the end effector. The substrate processing system 100A further includes a process gas 114, for example, a gas supply manifold 112 connected to a gas chemical supply from a facility. Depending on the process to be executed, the control module 110 controls the supply of the process gas 114 via the gas supply manifold 112. The selected gas is then flowed into the showerhead 150 and distributed into the volumetric space defined between the face of the showerhead 150 facing the wafer 101 and the wafer 101 on the pedestal 140. In an ALD process, the gas may be a reactant selected for absorption or reaction with the absorbed reactant.

[0041] Furthermore, the gas may or may not be premixed. Appropriate valves and mass flow control mechanisms may be applied to ensure the correct gas is supplied during the deposition and plasma treatment stages of the process. The process gas exits the chamber through the outlet. A vacuum pump (e.g., a single- or two-stage mechanical dry pump and / or a turbomolecular pump) withdraws the process gas and maintains the reactor at an appropriately low pressure by means of a closed-loop control flow restriction device such as a throttle valve or a pendulum valve.

[0042] Also shown is a carrier ring 200 that surrounds the outer region of the pedestal 140. The carrier ring 200 is configured to be positioned on a carrier ring support region that is stepped down from the wafer support region at the center of the pedestal 140. The carrier ring includes, on the outer edge side of its disk structure, for example, an outer radius, and on the wafer edge side of its disk structure closest to the location where the wafer 101 is positioned, for example, an inner radius. The wafer edge side of the carrier ring includes a plurality of contact support structures configured to lift the wafer 101 when the carrier ring 200 is lifted by the spider fork 180. Thus, the carrier ring 200 is lifted together with the wafer 101 and rotated, for example, to another station in a multi-station system. In other embodiments, the chamber is a single-station chamber.

[0043] FIG. 1B shows a substrate processing system 100B that processes a wafer and, for example, shows the application of RF power to a showerhead used to form a film thereon, according to one embodiment of the present disclosure. The reactor system 100B may be used to deposit a film, such as one formed by a CVD (e.g., PECVD) or atomic layer deposition (ALD) process, on a substrate. As shown in the configuration of FIG. 1B, RF power is supplied to the showerhead 150, but in other embodiments, the power may be supplied by other means, such as via the pedestal 140 as in FIG. 1A.

[0044] The substrate processing system 100B is the same as the system 100A except for the location where the RF power is supplied. Elements with the same numbers perform the same functions and have the same configurations. For example, the system 100B includes a chamber 102 having a lower chamber portion 102b and an upper chamber portion 102a. The central support column is configured to support a pedestal 140 that is an electrode grounded in one embodiment.

[0045] The showerhead 150 is electrically coupled to a power source (e.g., one or more RF power generators 50) via an RF matching network 106. The power source is controlled by a control module 110, e.g., a controller. The control module 110 is configured to operate the substrate processing system 100A by performing process input and control 108 as described above. Depending on the process being performed, the control module 110 controls the supply of process gas 114 via a gas supply manifold 112. The selected gas is then flowed into the showerhead 150 and distributed into the volumetric space defined between the showerhead face facing the wafer 101 and the wafer on the pedestal 140.

[0046] The substrate processing system 100B may include a plurality of processing stations. For example, the chamber 102 may include a plurality of processing stations, and each station has a pedestal for supporting the wafer 101. The RF matching network 106 may be coupled to an RF distribution system 420 that supplies power to the system 100B. For example, the RF power and frequency supplied by the matching network 106 are split by the distribution system 420 and distributed to each of the stations. Also, the RF power supplied to the stations passes through a VI probe 417 that senses the voltage of the showerhead during operation. In that way, the RF power may be adjusted at each station for a regulated power supply or for a desired power supply.

[0047] To adjust the amount of RF power supplied to each station, one or more MRCC tuners 415 are provided in a one-to-one relationship between the MRCC tuner 415 and the station. For example, in one embodiment, one or more MRCC tuners 415 can be configured to provide a balanced adjustment among each of the stations such that each station receives an equal amount of RF power. In another embodiment, one or more MRCC tuners 415 can be configured to provide a desired RF power to each of the stations, and the power supplied to each of the stations need not necessarily be equal.

[0048] FIG. 2 shows a top view of a multi-station processing tool providing four processing stations. This top view is of the lower chamber portion 102b (with, for example, the upper chamber portion 102a removed for purposes of illustration), and the four stations are accessed by the spider forks 226. Each spider fork, or fork, includes first and second arms, and each of the arms is disposed around a portion on each side of the pedestal 140. In this figure, the spider forks 226 are drawn in dashed lines to convey that they are under the carrier ring 200. The spider forks 226 using the engagement and rotation mechanism 220 are configured to lift the carrier ring 200 simultaneously (i.e., from the lower surface of the carrier ring 200) from the stations, lift it, and then rotate at least one or more of the stations before lowering the carrier ring 200 to the next position, where at least one of the carrier rings supports the wafer 101, whereby further plasma processing, treatment, and / or film deposition can occur on each respective wafer 101.

[0049] FIG. 3 shows a schematic diagram of an embodiment of a multi-station processing tool 300 with an inbound load lock 302 and an outbound load lock 304. At atmospheric pressure, robot 306 is configured to move a substrate from a cassette loaded via pod 308 to inbound load lock 302 via atmospheric port 310. Since inbound load lock 302 is coupled to a vacuum source (not shown), inbound load lock 302 may be pumped down when atmospheric port 310 is closed. Inbound load lock 302 also includes a chamber transfer port 316 that interfaces with processing chamber 102b. Thus, when chamber transfer 316 is open, another robot (not shown) may move the substrate from inbound load lock 302 to pedestal 140 of the first process station for processing.

[0050] The illustrated processing chamber 102b includes four process stations numbered 1 through 4 in the embodiment shown in FIG. 3. In some embodiments, processing chamber 102b may be configured to maintain a low pressure environment, whereby substrates may be transferred between process stations using carrier 200 without undergoing vacuum break and / or air exposure. Each process station shown in FIG. 3 includes a process station substrate holder (shown at 318 for station 1) and a process gas supply line inlet.

[0051] FIG. 3 also shows a spider fork 226 for transferring substrates within processing chamber 102b. Spider fork 226 rotates to enable transfer of wafers from one station to another. Transfer occurs by enabling spider fork 226 to lift carrier 200 from the outer lower surface, thereby lifting the wafer and rotating both the wafer and the carrier to the next station. In one configuration, spider fork 226 is made of a ceramic material to withstand the high levels of heat during processing.

[0052] FIG. 4A shows an exemplary multi-station plasma system 400A (e.g., a chemical vapor deposition system) configured for a desired distribution of RF power to multiple stations (e.g., automatic leveling, weighted distribution, etc.) in accordance with one embodiment of the present disclosure. A PECVD multi-station plasma system uses RF energy to deposit or etch a film on one or more wafers.

[0053] For example, the multi-station plasma system 400A provides active adjustment of the RF power of each station to equalize the distribution among the plasma reactors (known to be dynamic) of each station. As shown, the multi-station plasma system 400 includes an RF generation system that includes an HF generator 401 for generating high-frequency RF power and an LF / MF generator 405 for generating low-frequency to medium-frequency RF power. The high-frequency power operates at a high frequency (e.g., about 13.56 MHz, in the range of 10 - 20 MHz, in the range of 5 - 50 MHz, in the range of 5 - 100 MHz). The low-frequency power operates at a low frequency (e.g., in the range of 360 kHz to 440 kHz, in the range of 200 kHz to 700 kHz, and in the range of 100 kHz to 900 kHz). The medium-frequency power operates at a medium frequency (e.g., in the range of 200 kHz to 500 kHz, in the range of 400 kHz to 800 kHz, in the range of 500 kHz to 1 MHz, in the range of 800 kHz to 2 MHz, and in the range of 1.5 MHz to 3.5 MHz). Each generator is divided into a plurality of distribution channels, and each channel supplies power to a plasma reactor (e.g., a station). The power consumption at each station varies depending on the state of each reactor (e.g., the dynamic plasma impedance). For example, the high-frequency RF generator 401 is connected to a matching network 402. The power and frequency supplied by the matching network 402 are supplied to a split input radio frequency (SIRF) distribution system 410. Also, the low-frequency to medium-frequency RF generator 405 is connected to a matching network 406. The power and frequency supplied by the matching network 406 are supplied to the SIRF distribution system 410.

[0054] The SIRF distribution system 410 divides each of the high-frequency RF power and the low-frequency to medium-frequency RF power and distributes them to channels (e.g., from 1 to N channels). Each station is sourced from either only the high-frequency RF power, only the low-frequency to medium-frequency RF power, or a combination of the high-frequency RF power and the low-frequency to medium-frequency RF power. In one embodiment, the RF power output of the SIRF distribution system 410 is evenly distributed to each of the channels.

[0055] As shown in FIG. 4A, each channel provides power to a capacitively coupled plasma (CCP) reactor. For example, the first channel provides power to the reactor surrounding pedestal 425-1 of station 1, the second channel provides power to the reactor surrounding pedestal 425-2 of station 2, and the Nth channel provides power to the reactor surrounding pedestal 425-N of station N. The power consumption varies depending on the state of the reactor of the corresponding station. Since the CCP reactor is known to be dynamic, embodiments of the present disclosure provide an active adjustment of the RF power to each station to equalize the distribution between reactors or to provide a desired power level to each station. In particular, each channel includes an MRCC channel configured to adjust the RF power supplied to the corresponding station via the corresponding channel. Further, each channel includes a VI probe 417 for measuring the voltage of the RF power supplied to the corresponding station. That voltage may be used as feedback to determine the appropriate voltage and / or power supplied to the station. That is, in one embodiment, an MRCC tuner may be connected to the corresponding VI probe and sufficient logic may be used to perform multi-station RF automatic matching to actively equalize the station power. Also, instead of an equalized distribution, a desired and / or calibrated non-uniformity may be achieved as well. For example, in the first channel, VI probe 417A is configured to measure the RF power supplied to station 1 by MRCC tuner 415A, in the second channel, VI probe 417B is configured to measure the RF power supplied to station 2 by MRCC tuner 415B, and in the Nth channel, VI probe 417N is configured to measure the RF power supplied to station N by MRCC tuner 415N.

[0056] As shown in FIG. 4A, each station is composed of one or more filter boxes. Generally, a power supply that supplies AC or DC power to various components (such as a heater and a controller that receives a voltage signal from a thermocouple to measure the temperature of the heater) via the central pillar of the pedestal is protected from the RF power supplied from the central pillar by using a filter box (such as an RF filter) at points before and after the channel portion that couples the RF power (from low frequency to medium frequency and / or high frequency) to the AC or DC power. For example, when high-frequency RF power is supplied to the station (such as supplied to the chuck via the central pillar of the pedestal), a high-frequency filter box 430 is also provided to insulate the high-frequency RF power from any other electrical circuit configurations that may also be present in the central pillar. For example, an AC or DC path line that also passes through the central pillar of the pedestal may be used to control the heating element in the chuck of the pedestal. In this way, the high-frequency filter box 430 insulates the AC path line from the high-frequency RF power supplied via the central pillar. Similarly, the low-frequency to medium-frequency filter box 435 insulates the AC path line from the low-frequency to medium-frequency RF power supplied via the central pillar. More specifically, the high-frequency filter box 430A insulates the high-frequency RF power, the low-frequency to medium-frequency filter box 435A insulates the low-frequency to medium-frequency RF power supplied to station 1, the high-frequency filter box 430B insulates the high-frequency RF power, the low-frequency to medium-frequency filter box 435B insulates the low-frequency to medium-frequency RF power supplied to station 2, ··· the high-frequency filter box 430N insulates the high-frequency RF power, and the low-frequency to medium-frequency filter box 435N insulates the low-frequency to medium-frequency RF power supplied to station N.

[0057] FIG. 4B shows a block diagram of an RF power system 400B configured for distribution of RF power or automatic leveling of desired or weighted distribution of RF power to a quad-station module (QSM) plasma processing system using one or more MRCC systems, according to one embodiment. System 400B can be implemented within the multi-station plasma system 400A of FIG. 4A.

[0058] A plurality of power generators are provided. For example, an RF dual-source power generator may include a low-frequency to medium-frequency RF power generator 405 that provides LF / HF power and a high-frequency RF power generator 401 that provides HF power at a high frequency.

[0059] In addition, a split-input RF (SIRF) distribution box 420 is configured to receive LF / MF power from a low-frequency to medium-frequency RF power generator 405 and HF power from a high-frequency RF power generator 401. The SIRF distribution box 420 is further configured to combine and distribute at least one of the LF / MF power and the HF power as one or more split RF outputs, each of which is provided to a corresponding MRCC module 415 as a corresponding split RF input. For example, the SIRF distribution box 420 provides RF output 1 (455A) to an MRCC tuner 415A that provides regulated RF power to station 1, RF output 2 (455B) to an MRCC tuner 415B that provides regulated RF power to station 2, RF output 3 (455C) to an MRCC tuner 415C that provides regulated RF power to station 3, and RF output 4 (455D) to an MRCC tuner 415D that provides regulated RF power to station 4.

[0060] In this way, the four MRCC tuners of the RF power system 400B provide RF power (e.g., RF output) from the SIRF distribution box 420 as internal RF input so that each MRCC tuner 415 has an RF input and an RF output. That is, each MRCC tuner has an RF input connected to the SIRF RF output of the corresponding station. Also, each MRCC tuner has one RF output provided to either the pedestal or the showerhead of a station. For example, the MRCC tuner 415A provides RF power 1 adjusted to the pedestal or the showerhead 420A of station 1, the MRCC tuner 415B provides RF power 2 adjusted to the pedestal or the showerhead 420B of station 2, the MRCC tuner 415C provides RF power 3 adjusted to the pedestal or the showerhead 420C of station 3, and the MRCC tuner 415D provides RF power 4 adjusted to the pedestal or the showerhead 420D of station 4. In one embodiment, the RF power supplied to each station is equalized and / or approximately equal. In another embodiment, the RF power supplied to each station is not equalized according to a desired distribution.

[0061] In addition, the MRCC controller 450 controls the operation of each of the MRCC tuners 415A - 415D (e.g., provides settings for equalized distribution, manual distribution, the described distribution, etc.). For example, the MRCC controller 450 may provide a control signal to adjust the value of the corresponding variable capacitor, and by adjusting the variable capacitor, the RF power output of the corresponding MRCC tuner can be adjusted.

[0062] In particular, each MRCC tuner 415 includes an RF circuit having two parallel circuit paths, as described in FIG. 5A below. Each parallel circuit path includes a series resonance circuit with resonance beyond either the LF / MF or HF fundamental operating frequency. Further, both parallel circuits are designed to adjust the power of either LF / MF or HF by adjusting the value of a variable capacitor. The power response to the adjustment depends on the plasma load impedance of the station.

[0063] FIG. 5A is an MRCC circuit diagram 500A configured for automatic adjustment of RF power. The MRCC circuit includes a low-to-medium frequency adjustment circuit and a high-frequency adjustment circuit according to one embodiment of the present disclosure. The MRCC circuit diagram 500 has a wide capacitance range that provides a wide adjustment range with minimal high- and low-frequency to medium-frequency crosstalk. As shown, the MRCC circuit 500A includes an LF / MF adjustment circuit 701 coupled in parallel with an HF adjustment circuit 702 between ground and a corresponding common node 510 configured to provide a corresponding split RF input (e.g., receive a split RF output output from an SIRF distribution box 420 provided internally as an RF input). The parallel circuits, when adjusted, change the impedance of the load. In particular, inserting the MRCC circuit diagram 500A into the RF path impedes the load by increasing or decreasing the energy and / or power going to the corresponding station. Further, the LF / MF adjustment circuit 701 and the HF adjustment circuit 702 are designed such that one circuit is not affected when the other is adjusted.

[0064] The LF / MF tuning circuit 701 includes a variable LF / MF capacitor 530 coupled in series with the LF / MF inductor 520. The LF / MF tuning circuit is coupled between ground and the corresponding common node 510. In one embodiment, the resonance of the LF / MF tuning circuit 701 is above the fundamental operating frequency (LF / MF frequency). In one embodiment, the variable LF / MF capacitor 530 has a value between 5 and 700 picofarads (pf), although in other embodiments the value may exceed this range. In one embodiment, the variable LF / MF capacitor 530 has a value between 15 and 650 picofarads (pf), although in other embodiments the value may exceed this range. In one embodiment, the variable LF / MF capacitor 530 has a value between 100 and 400 picofarads (pf), although in other embodiments the value may exceed this range. In one embodiment, the variable LF / MF capacitor 530 has a value between 200 and 300 picofarads (pf), although in other embodiments the value may exceed this range. The LF / MF tuning circuit 701 is adjusted and / or regulated by varying the value of the LF / MF capacitor 530. Thus, the LF / MF power is regulated by adjusting the value of the variable LF / MF capacitor 530. In one embodiment, the LF / MF inductor 520 has a value found within the range between 10 and 40 microhenries (uH). In one embodiment, the LF / MF inductor 520 has a value of 24 microhenries (uH), although in other embodiments the value may be different.

[0065] The HF tuning circuit 702 includes a variable HF capacitor 535 coupled in series with the HF inductor 525. The HF tuning circuit 702 is coupled between ground and the corresponding common node. In one embodiment, the resonance of the HF tuning circuit 702 is above the fundamental operating frequency (HF frequency). In one embodiment, the variable HF capacitor 535 has a value between 2 and 75 picofarads (pf), although in other embodiments the value may exceed this range. In one embodiment, the variable HF capacitor 535 has a value between 5 and 50 picofarads (pf), although in other embodiments the value may exceed this range. In one embodiment, the variable HF capacitor 535 has a value between 10 and 30 picofarads (pf), although in other embodiments the value may exceed this range. In one embodiment, the variable HF capacitor 535 has a value between 15 and 25 picofarads (pf), although in other embodiments the value may exceed this range. The HF tuning circuit 702 is adjusted and / or regulated by changing the value of the HF capacitor 535. Thus, the HF power is regulated by adjusting the value of the variable HF capacitor 535. In one embodiment, the HF inductor 525 has a value found within the range of 3 to 30 microhenries (uH). In one embodiment, the HF inductor 525 has a value found within the range between 5 and 25 microhenries (uH). In one embodiment, the HF inductor 525 has a value of 16 microhenries (uH), although in other embodiments this value may be different. In one embodiment, the value of the HF inductor 525 is less than the value of the LF / MF inductor 520.

[0066] As described above, the LF / MF adjustment circuit 701 is adjusted and / or regulated by changing the value of the LF / MF capacitor 530, and the HF adjustment circuit 702 is adjusted and / or regulated by changing the value of the HF capacitor 535. The required values of the LF / MF capacitor 530 and the high-frequency capacitor 535 depend on the process conditions in the reactor. For example, the adjustment of the LF / MF adjustment circuit 701 and / or the HF adjustment circuit 702 provides an adjustment of the voltage shown in the corresponding reactor and / or an adjustment of the power supplied to the corresponding reactor. Specifically, the MRCC circuit diagram 500A uses a plurality of parallel circuits (e.g., the LF / MF adjustment circuit 701 and the HF adjustment circuit 702) as phase shifters to provide impedance changes for a specific source frequency. In this way, when the impedance changes, the power supplied to a specific load (station) changes. Thus, when the load changes (e.g., when the plasma dynamically changes its impedance during processing), the MRCC circuit is configured to automatically adjust the impedance to supply the appropriate power to the load (e.g., normalized power, required power, etc.). Further, in an embodiment, the values of the LF / MF capacitor 530 and the HF capacitor 535 are synchronized with the changes in the process conditions through one adjustment for the entire processing sequence or through adjustments at multiple important steps within the processing sequence.

[0067] After adjusting the MRCC circuit diagram 500A, the corresponding common node 510 is configured to provide the corresponding RF output to the corresponding station. That is, the RF input is adjusted and provided as the RF output to the corresponding station.

[0068] In an embodiment, the LF / MF adjustment circuit 701 and the HF adjustment circuit 702 are designed to have insulation to avoid interference between their respective source frequencies. In addition, these circuits avoid resonance throughout the adjustment range and prevent a sudden increase in current to one station. The following is the impedance formula of the MRCC circuit diagram 500A.

Number

[0069] FIG. 5A-1 shows the cross-parallel insulation between the LF / MF adjustment circuit and the HF adjustment circuit of the MRCC diagram of FIG. 5A according to one embodiment of the present disclosure. In particular, when adjusting the variable LF / MF capacitor, the HF adjustment circuit is insulated from the LF / MF adjustment circuit. Also, when adjusting the variable HF capacitor, the LF / MF adjustment circuit is insulated from the HF adjustment circuit. Specifically, when adjusting the variable LF / MF capacitor or the variable HF capacitor, cross-parallel insulation occurs between the LF / MF inductor of the LF / MF adjustment circuit and the HF inductor of the HF adjustment circuit. As shown, when the LF / MF capacitor 530 is adjusted, the HF inductor 525 in the parallel circuit of the HF adjustment circuit 702 operates to exhibit a high impedance, thereby insulating the HF adjustment circuit 702 when the LF / MF adjustment circuit 701 (e.g., the LF / MF capacitor 530) is adjusted. Also, when the HF capacitor 535 is adjusted, the LF / MF inductor 520 in the parallel circuit of the LF / MF adjustment circuit 701 operates to exhibit a high impedance, thereby insulating the LF / MF adjustment circuit 701 when the HF adjustment circuit 702 (e.g., the HF capacitor 535) is adjusted. That is, each of the low-frequency to medium-frequency inductor and the high-frequency inductor provides cross-parallel insulation when adjusting the capacitor on the opposite side, i.e., the opposite side of the cross-adjustment circuit.

[0070] Figures 5B and 5C show an example of adjusting power using the MRCC circuit diagram 500A with an input power of 1 KW (e.g., internal RF input). As described, the power is adjusted by changing one or more of the LF / MF capacitor 530 and the HF capacitor 535. In Figures 5B and 5C, the values of the LF / MF capacitor 530 and the HF capacitor 535 are represented as a percentage of the range of the total value available for capacitance. In particular, Figures 5B and 5C show the simulation results using 13.56 MHz for high frequencies and 400 kHz for low to medium frequencies with an input power of 1 kW. As shown, Figures 5B and 5C show the adjustability and isolation between the circuits at each frequency.

[0071] In particular, FIG. 5B shows a three-dimensional (3D) graph 500B depicting the adjustment of RF power using the MRCC circuit by adjusting the capacitor (e.g., LF / MF capacitor 530 of LF / MF tuning circuit 701) of the low-frequency to medium-frequency tuning circuit, regardless of the value of the capacitor (e.g., HF capacitor 535 of HF tuning circuit 702) of the high-frequency tuning circuit of the MRCC circuit configured for the distribution of RF power to multiple stations or the automatic leveling of a desired distribution of RF power. Graph 500B includes a Z-axis 541 indicating power, an X-axis 542 indicating the value of LF / MF capacitor 530, and a Y-axis 542 indicating the value of HF capacitor 535. In particular, the insulation between the LF / MF tuning circuit 701 and the HF tuning circuit 702 is achieved when adjusting the MRCC circuit diagram 500A. In one embodiment, the HF tuning circuit 702 is insulated from the LF / MF tuning circuit 701 when adjusting the variable LF / MF capacitor 530. For example, when the corresponding split RF input has a low-frequency to medium-frequency component (e.g., low-frequency to medium-frequency of 400 kHz), when adjusting the variable LF / MF capacitor 530, the HF inductor 525 exhibits a high impedance with respect to the corresponding split RF input, effectively insulating the HF tuning circuit 702 from the LF / MF tuning circuit 701. As shown, for a particular value of the LF / MF capacitor 530, the power level is constant regardless of the value of the HF capacitor 543. That is, the HF capacitor 543 may vary in value with respect to a particular value of the LF / MF capacitor 530, but the power level remains constant.

[0072] Figure 5C shows a 3D graph 500C depicting the adjustment of RF power using an MRCC circuit by adjusting the capacitor of a high-frequency tuning circuit independent of the values of the capacitors of the low-frequency to medium-frequency tuning circuit of the MRCC circuit for the automatic leveling of the distribution of RF power to multiple stations, in accordance with one embodiment of the present disclosure. Graph 500C includes the same axes as graph 500B of Figure 5B, including a Z-axis 541 indicating power, an X-axis 542 indicating the value of the LF / MF capacitor 530, and a Y-axis 542 indicating the value of the HF capacitor 535. In particular, the isolation between the LF / MF tuning circuit 701 and the HF tuning circuit 702 is achieved, for example, when tuning the MRCC circuit diagram 500A. In one embodiment, the LF / MF tuning circuit 701 is isolated from the HF tuning circuit 702 when adjusting the variable HF capacitor 535. For example, when the corresponding split RF input has a high-frequency component (e.g., a high frequency of 13.56 MHz), the LF / MF inductor 520 exhibits a high impedance with respect to the corresponding split RF input and effectively isolates the LF / MF tuning circuit 701 from the HF tuning circuit 702 when adjusting the variable HF capacitor 535. As shown, for a particular value of the HF capacitor 535, the power level is constant regardless of the value of the LF / MF capacitor 530. That is, the value of the LF / MF capacitor 530 may vary with respect to a particular value of the HF capacitor 535, but the power level remains constant.

[0073] Figures 5D through 5F show, in one embodiment, a recipe control calibration circuit 500D configured to calibrate low-frequency RF power and / or high-frequency RF power, and simulation results showing the power response when adjusting the capacitors within the calibration circuit 500D.

[0074] In particular, FIG. 5D shows a recipe control calibration circuit 500D including a series element for splitting RF power supplied to a plurality of stations, in accordance with one embodiment of the present disclosure. Circuit 500D includes a node 1 for receiving a low-frequency RF_IN. Node 1 is coupled to an LF inductor 501, which is coupled in parallel with a variable LF capacitor (LF Cap) 502, both of which are coupled to node 2. Node 2 is coupled in parallel to low-frequency capacitors 503, 504. The parallel circuit includes low-frequency inductors 505, capacitors 506, 507, and 508, all of which are coupled in parallel between node 1 and node 2. Capacitor 516 is configured to receive a high-frequency RF_IN and is coupled between node 1 and node 4. A variable HF capacitor (HF Cap) 515 is coupled between node 2 and ground. Inductor 517 is coupled between node 1 and node 5 and provides RF_OUT.

[0075] Also, FIGS. 5E and 5F show simulations suggesting that the recipe control calibration circuit 500D is not completely isolated. In particular, FIG. 5E shows a 3D graph showing the adjustment of RF power using the recipe control calibration system of FIG. 5D, which shows the effect on the high-frequency adjustment circuit when adjusting the low-frequency adjustment circuit according to one embodiment of the present disclosure. For example, in FIG. 5E, when the low-frequency component (e.g., capacitor) of circuit 500D is adjusted, at a particular value of the low-frequency capacitor, the power varies according to the value of the high-frequency capacitor. That is, the low-frequency component and the high-frequency component affect each other and are not isolated. Similarly, FIG. 5F shows a 3D graph showing the adjustment of RF power using the recipe control calibration system of FIG. 5D, which shows the effect on the low-frequency adjustment circuit when adjusting the high-frequency adjustment circuit according to one embodiment of the present disclosure. In FIG. 5F, when the high-frequency component (e.g., capacitor) of circuit 500D is adjusted, at a particular value of the high-frequency capacitor, the power varies according to the value of the low-frequency capacitor. Thus, again, the low-frequency component and the high-frequency component affect each other and are not isolated. Thus, since the low-frequency to medium-frequency components and the high-frequency components are isolated from each other when operating at their respective frequencies, circuit 500A of FIG. 5A provides an improvement over circuit 500D of FIG. 5D.

[0076] FIG. 6 is a perspective view of a system 600 configured for automatic leveling of RF power supply to a plurality of stations using one or more MRCC adjustment systems, in accordance with one embodiment of the present disclosure. As shown, system 600 includes a quad set of MRCC tuner modules required to support a quad station module tool. That is, the quad set includes four individual MRCC tuners including MRCC tuners 415A - 415D, and each MRCC tuner is configured to control the power supply to a corresponding station. Each MRCC tuner is similarly configured, and the discussion of MRCC tuner 415A provided below is representative of all MRCC tuners. In particular, FIG. 7A provides a perspective view and an exploded view of an MRCC tuner 415 (e.g., 415A) configured to supply a corresponding station with a leveled and / or desired amount of power.

[0077] In one embodiment, system 600 exhibits a symmetric design that is backward compatible with future symmetric low - to medium - frequency RF systems, thus improving the inherent station leveling performance. In particular, the four MRCC adjustment systems 415A - 415D are symmetrically arranged around a central opening 690. In one embodiment, the symmetrically arranged MRCC adjustment systems 415A - 415D are configured under a quad station processing system (e.g., the systems shown in FIGS. 2 - 3) to supply power to one or more pedestals. In another embodiment, the symmetrically arranged MRCC adjustment systems 415A - 415D are configured above a quad station processing system (e.g., the systems shown in FIGS. 2 - 3) to supply power to one or more shower heads.

[0078] As described above, each MRCC tuner 415 includes an LF / MF adjustment circuit 701 and an HF adjustment circuit 702. For example, the LF / MF adjustment circuit includes an LF / MF inductor 520 and an LF / MF capacitor, and the LF / MF adjustment circuit is adjusted by adjusting the corresponding LF / MF capacitor 530. Also, the HF adjustment circuit includes an HF inductor 525 and an HF capacitor 535, and the HF adjustment circuit is adjusted by adjusting the HF capacitor 535.

[0079] Each of the MRCC tuners is similarly configured. For example, the MRCC tuner 415A includes a fan 630 for providing cooling of the components within the MRCC tuner. In addition, each adjustment circuit within the MRCC tuner 415 includes an actuator 610 configured to adjust the corresponding variable capacitor, and an encoder 620 for measuring the value of the variable capacitor. The actuator is configured to change the value of the corresponding capacitor. For example, the actuator may be a motor (e.g., stepper, servo, etc.) that is controlled to vary the value of the variable capacitor. For example, the LF / MF adjustment circuit 701 is coupled to the actuator 610A and the encoder 620A. Similarly, the HF adjustment circuit 702 is coupled to the actuator 610B and the encoder 620B.

[0080] Due to its similar configuration, the MRCC tuner can be used in a modular fashion, with one MRCC tuner 415 associated with one station. The modularity is implemented by providing an MRCC tuner 415 that can be physically insulated from, but attached to, an existing split input RF (SIRF) distribution box. In particular, each MRCC tuner 415 can be placed near the reactor, or near the source, or anywhere along the RF path related thereto. Thus, by inserting the MRCC tuner 415 into the RF path, the load is prevented (e.g., varied) from increasing or decreasing the energy going to a particular station.

[0081] In one embodiment, the MRCC tuner 415A uses an absolute encoder 620 to track the position of each corresponding capacitor. The position information may be provided as feedback to the controller. The absolute encoder enables more accurate positioning and positioning verification, ensuring repeatable positioning and thus repeatable power regulation between stations. Previously, since the encoder was not used for position verification, internal verification of values and positions could not be performed for verification purposes.

[0082] Furthermore, when using an absolute encoder, the position information determined by the corresponding encoder is not lost. That is, using an absolute encoder allows one to know the position without resetting the position using a homing, limit switch, or hard stop search routine even after powering on again. For example, the mechanical end limits and midpoints of a variable capacitor can be determined and learned by the absolute encoder. This enables a more consistent process result that does not change with a power cycle. Also, using an absolute encoder requires calibrating the corresponding capacitor only once (e.g., to determine the mechanical end limit), so there is no load on the capacitor. Therefore, the integrated absolute encoder can be configured to track the actual position, minimize capacitance changes, and reliably recognize the location of the motor. This eliminates the need to perform a high-stress homing operation.

[0083] In particular, the use of the absolute encoder 620 enables the ability to create an accurate profile of the corresponding capacitor. The two ends of the capacitor can be found, in one embodiment, by looking at the perceived position of the motor (based on the steps / pulses sent to the motor) compared to the actual position of the motor (based on the absolute encoder), and determining the hard stops that are found when they exceed the full-step synchronization (1.8 degrees). By using this determined limit to stop rather than "hammering" the hard stop, the stress on the hard stop is reduced. For example, a stepper motor, when jammed, applies a semi-sine wave of force (e.g., back electromotive force [EMF] pulses), causing a "hammer" motion. This can cause more damage if it does not stop quickly. Checking for full-step (or less) misalignment between the motor and the encoder allows the stepping motor to be stopped only during the first contact with the hard stop. Thereafter, when adjusting the capacitor, the motor may not need to return to the hard stop. Repeatedly pressing the hard stop can significantly change the function of the capacitor and may require readjusting the system recipe each time the power is cycled.

[0084] Specifically, by finding one hard stop, it becomes possible to establish a coordinate system. The integrity of the capacitor can also be checked by finding the other hard stop (e.g., the other end) to ensure the full range of adjustment of a given capacitor. The perceived number of rotations determined by finding both hard stops can be compared to the expected number of rotations provided by the manufacturer. If the perceived number of rotations does not match the expectation, in an embodiment, it may indicate problems such as slip between the capacitor and the motor, damage to the capacitor, or an incorrect capacitor. Detecting these problems before calibration and periodically throughout the life of the MRCC tuner provides preventive maintenance.

[0085] FIG. 7B is a perspective view of a clam shell outer shape 750 of an MRCC tuner 415 configured for adjusting RF power to a processing station, according to one embodiment of the present disclosure. With the clam shell enclosure design, the assembler can access from three sides, reducing assembly time and cost, and shortening the assembly time of components, thus reducing labor costs. For example, as shown with reference to both FIGS. 7A and 7B, the clam shell enclosure 750 is attached to a chassis 730 configured to hold at least an LF / MF adjustment circuit 701 and an HF adjustment circuit 702. The clam shell enclosure 750 is also attached to a surface 735 that functions as a boundary between the adjustment circuits (e.g., LF / MF adjustment circuit 701 and HF adjustment circuit 702) on one side and the motor 610 and encoder 620 on the other side.

[0086] More specifically, the enclosure 780 includes a chassis or base 730, a front face 735, and a clam shell outer shape 750. The enclosure 780 is configured to surround the LF / MF adjustment circuit 701 and the HF adjustment circuit 702. The clam shell outer shape 750 includes an upper portion 751 and a plurality of side walls. For example, the clam shell outer shape 750 includes side walls 752A, 752B adjacent to the front face 735 and a side wall 752C that faces the front face 735 when attached. Further, a bracket 781 is attached or coupled to the front face 735.

[0087] As shown in FIG. 7A, the MRCC tuner 415 of FIG. 7A includes one or more floating motor mounts 710 (e.g., mounts 710A and 710B) attached to the surface 735 for contacting a capacitor of a low-frequency to medium-frequency adjustment circuit 701 or a high-frequency adjustment circuit 702, according to an embodiment of the present disclosure. For example, the floating motor mount 710A provides a floating boundary between the LF / MF actuator 610A and the LF / MF capacitor 530, and the floating motor mount 710B provides a floating boundary between the HF actuator 610B and the HF capacitor 535.

[0088] As an example, as represented by the floating motor mount 710B, the upper part of the floating motor mount 710 is attached to the extension part 736B via screws 740A, 740B. The extension part 736B is attached to a bracket 781 attached to the front surface 735. As shown in the blowout, the bottom of the floating motor mount 710 (represented by the mount 710B) is loosely aligned with the chassis 730 by inserting the tabs 720A, 720B of the mount 710 into slots (not shown) of the chassis 730. The floating motor mount 710B is configured to counter axial misalignment between the actuator / motor 610B and the corresponding capacitor (HF capacitor 535). With proper alignment, seizure of the capacitor due to axial pressure on the bearing of the capacitor or a coupler (not shown) coupling the capacitor and the motor is prevented. In addition, the floating motor mount 710 can replace a machined solid aluminum block used as a motor mount for aligning the motor and the capacitor, thereby reducing costs and enhancing ease of installation.

[0089] The floating motor mount 710A is configured in the same manner as the mount 710B. In particular, the floating motor mount 710A is attached to the extension part 736A via screws. The extension part 736A is attached to a bracket 781 attached to the front surface 735. The bottom of the floating motor mount 710A is loosely aligned with the chassis 730 by inserting tabs into slots of the chassis 730. The floating motor mount 710A is configured to counter axial misalignment between the actuator / motor 610A and the corresponding capacitor (LF / MF capacitor 530). Proper alignment prevents seizure of the capacitor 530 due to axial pressure on the bearing of the capacitor or a coupler (not shown) coupling the capacitor and the motor.

[0090] FIG. 7C is a perspective view of an MRCC tuner system configured for adjusting RF power to a processing station, according to one embodiment of the present disclosure. The MRCC tuner system includes an LF / MF tuning circuit 701 and an HF tuning circuit 702 attached to a chassis 730. The clam shell outer shape 750 of the MRCC tuner is transparent and shows the LF / MF capacitor 530 and the LF / MF inductor 520 of the LF / MF tuning circuit 701, and shows the HF capacitor 535 and the HF inductor 525 of the HF tuning circuit 702. The clam shell outer shape 750 is attached to the chassis 730 and a surface 735, and a fan 630 is also attached to the clam shell outer shape 750. The surface 735 separates the motor 610 / encoder 620 from the corresponding tuning circuit and functions as a boundary therebetween. The encoder 620 returns position information to a controller that controls the motor 610 to adjust the position of the corresponding capacitor. Also, an RF output 780 is shown to supply RF power to a corresponding station.

[0091] FIG. 8 shows a control module 800 for controlling the above system. For example, the control module 800 may include a processor, a memory, and one or more interfaces. The control module 800 may be applied to control devices within the system, based in part on sensed values. For example, the control module 800 may control one or more of a valve 802, a filter heater 804, a pump 806, and other devices 808, based on sensed values and other control parameters. The control module 800 receives sensed values only from, for example, a pressure gauge 810, a flow meter 812, a temperature sensor 814, and / or other sensors 816. The control module 800 may also be applied to control process conditions during the supply of precursors and the deposition of a film. The control module 800 typically includes one or more memory devices and one or more processors.

[0092] The control module 800 may control the activities of the precursor supply system and the deposition apparatus. The control module 800 executes a computer program including a series of instructions for controlling process timing, supply system temperature, pressure difference between filters, valve position, gas mixing, chamber pressure, chamber temperature, substrate temperature, RF power level, substrate chuck or pedestal position, and other specific process parameters. The control module 800 may also monitor the pressure difference and automatically switch the vapor precursor supply from one or more paths to one or more other paths. In some embodiments, other computer programs stored in a memory device associated with the control module 800 may be applied.

[0093] Typically, there is a user interface associated with the control module 800. The user interface may include a display 818 (e.g., a display screen and / or graphical software display of the apparatus and / or process conditions), and user input devices 820 such as a pointing device, keyboard, touch screen, microphone, etc.

[0094] The computer program for controlling the supply of precursors, deposition, and other processes in the process sequence can be written in any conventional computer-readable programming language such as assembly language, C, C++, Pascal, Fortran, etc. The compiled object code or script is executed by the processor to perform the tasks identified by the program.

[0095] The control module parameters are related to process conditions such as the pressure difference of the filter, the composition and flow rate of the process gas, temperature, pressure, plasma conditions such as RF power level and RF frequency from low frequency to medium frequency, cooling gas pressure, and chamber wall temperature.

[0096] System software may be designed or configured in many different ways. For example, various chamber component subroutines or control objects may be written to control the operation of the chamber components necessary to perform the deposition process of the present invention. Examples of programs or program sections for this purpose include substrate positioning code, process gas control code, pressure control code, heater control code, and plasma control code.

[0097] The substrate positioning program may include program code for loading the substrate onto a pedestal or chuck and for controlling the chamber components used to control the spacing between the substrate and other parts of the chamber, such as gas inlets and / or targets. The process gas control program may include code for controlling the gas composition and flow rate, and optionally code for flowing gas into the chamber prior to deposition to stabilize the pressure within the chamber. The filter monitoring program includes code for comparing the measured difference to a predetermined value and / or code for switching paths. The pressure control program may include code for controlling the pressure within the chamber, for example, by regulating the throttle valve of the chamber evacuation system. The heater control program may include code for controlling the current to the heating unit for heating the components of the precursor supply system, the substrate, and / or other parts of the system. Alternatively, the heater control program may control the supply of a heat transfer gas, such as helium, to the substrate chuck.

[0098] Examples of sensors that may be monitored during deposition include, but are not limited to, a mass flow control module, a pressure sensor such as pressure gauge 810, a thermocouple disposed in the supply system, a pedestal or chuck, and the status sensors 920 in FIGS. 9A-9C. Appropriately programmed feedback and control algorithms may be used with the data from these sensors to maintain desired process conditions. The foregoing describes the implementation of embodiments of the present disclosure in single or multi-chamber semiconductor processing tools.

[0099] In some implementations, the controller is part of a system, which may be part of the above example. Such a system can include semiconductor processing equipment that includes one or more processing tools, one or more chambers, one or more processing platforms, and / or certain processing components (such as substrate pedestals, gas flow systems, etc.). These systems may be integrated with electronics to control the operation of semiconductor wafers or substrates before, during, and after processing. The electronics may be referred to as a "controller" and may control various components or sub-parts of the system. The controller may, depending on the processing requirements and / or the type of system, supply process gases, set temperatures (e.g., heating and / or cooling), set pressures, set vacuums, set power, set radio frequency (RF) generator settings, set RF matching circuit settings, set frequencies, set flow rates, set fluid supply settings, set position and operation settings, transfer substrates between tools and other transfer tools, and / or control any of the processes disclosed herein, including load locks connected to or in contact with a particular system.

[0100] Broadly speaking, the controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software, such as receiving commands, issuing commands, controlling operations, enabling cleaning operations, and enabling endpoint measurements. The integrated circuit may include a chip in the form of firmware storing program instructions, a digital signal processor (DSP), a chip defined as an application-specific integrated circuit (ASIC), and / or one or more microprocessors, or a microcontroller (such as software) that executes program instructions. The program instructions may be instructions notified to the controller in the form of various individual settings (or program files) that define operation parameters for executing a specific process on, or with respect to, or for the system, a semiconductor substrate. The operation parameters may, in some embodiments, be part of a recipe defined by a process engineer to achieve one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0101] In some implementations, the controller may be part of a computer that is integrated with, coupled to, or otherwise networked to the system, or a combination thereof, or coupled to that computer. For example, the controller may be in all or part of the "cloud" of a fab host computer system, which can enable remote access to substrate processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, examine trends or performance metrics from multiple manufacturing operations, change the parameters of the current process, set the processing steps to follow the current process, or start a new process. In some examples, a remote computer (such as a server) may provide a process recipe to the system via a network that may include a local network or the Internet.

[0102] The remote computer may include a user interface that enables the input or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in a data format that specifies the parameters of each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being executed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and operate towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more remotely located (such as at the platform level or as part of a remote computer) integrated circuits that are coupled to control a process in the chamber.

[0103] By way of non-limiting example, exemplary systems may include plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, clean chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing systems that may be associated with or used in the fabrication and / or manufacture of semiconductor wafers.

[0104] As mentioned above, depending on one or more processing steps performed by a tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, the main computer, another controller, or the location of tools in a semiconductor manufacturing factory and / or a tool used for material transport that moves the wafer container between load ports.

[0105] The foregoing description of the embodiments has been provided for purposes of illustration and description. It is not intended to be exhaustive or to limit the disclosure. The individual elements or features of a particular embodiment are generally not limited to that particular embodiment, but are interchangeable where applicable and can be used in the selected embodiment even if not specifically shown or described. The same may be changed in many ways. Such variations should not be regarded as a departure from the disclosure, and all such modifications are intended to be included within the scope of the disclosure.

[0106] Although several of the foregoing embodiments have been described in detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications can be practiced within the scope of the appended claims. Accordingly, the embodiments should be regarded as illustrative rather than restrictive, and the embodiments should not be limited to the details given herein, but may be modified within the scope and equivalents of the claims.

Claims

1. 1. A circuit for regulating radio frequency (RF) power, comprising: a low-to-mid frequency (LF / HF) tuning circuit including a variable LF / MF capacitor coupled in series with a LF / MF inductor, the LF / HF tuning circuit being coupled between ground and a common node configured to receive an RF input; a high frequency (HF) tuning circuit coupled in parallel with the LF / MF tuning circuit between ground and the common node, the HF tuning circuit including a variable HF capacitor coupled in series with an HF inductor; A circuit, wherein when the variable LF / MF capacitor or the variable HF capacitor is adjusted, cross-parallel isolation occurs between the LF / MF inductor of the LF / MF adjusting circuit and the HF inductor of the HF adjusting circuit.

2. 2. The circuit of claim 1, wherein the RF power is provided by an RF dual source power generator that provides at least one of LF / HF power at the low to mid frequencies and HF power at the high frequencies.

3. 2. The circuit of claim 1, wherein when the RF power has low to mid frequency components, the HF inductor presents a high impedance to the RF input that effectively isolates the HF tuning circuit from the LF / MF tuning circuit when adjusting the variable LF / MF capacitor.

4. 2. The circuit of claim 1, wherein when the RF power has a high frequency content, the LF / MF inductor presents a high impedance to the RF input that effectively isolates the LF / MF regulating circuit from the HF regulating circuit when the variable HF capacitor is adjusted.

5. 10. The circuit of claim 1, wherein the common node is configured to provide a corresponding RF output to a corresponding processing station after conditioning.

6. 2. The circuit of claim 1, an LF / MF actuator coupled to the variable LF / MF capacitor and configured to adjust the variable LF / MF capacitor; an LF / MF absolute encoder configured to determine a value of the variable LF / MF capacitor; an HF actuator coupled to the variable HF capacitor and configured to adjust the variable HF capacitor; an HF absolute encoder configured to determine a value of the variable HF capacitor.

7. 2. The circuit of claim 1, wherein the LF / MF inductor has a higher value than the HF inductor and provides isolation between the LF / MF and HF regulating circuits when operating at low to medium or high frequencies.

8. 1. An apparatus for regulating radio frequency (RF) power, comprising: a radio frequency (RF) dual source power generator including a low to mid frequency (LF / HF) power generator providing LF / MF power at a low frequency (LF) to a mid frequency (MF) and a high frequency (HF) power generator providing HF power at a high frequency; a split-input RF (SIRF) distribution box configured to receive the LF / MF power and to receive the HF power, the SIRF distribution box further configured to combine at least one of the LF / MF power and HF power as one or more split RF inputs for distribution to a corresponding MRCC circuit; one or more MRCC circuits for one or more processing stations, the one or more MRCC circuits including an LF / MF conditioning circuit coupled in parallel to an HF conditioning circuit between ground and a corresponding common node configured to provide a corresponding split RF input; the LF / MF adjustment circuit includes a variable LF / MF capacitor coupled in series with an LF / MF inductor, the LF / MF adjustment circuit being coupled between ground and the corresponding common node; the HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor, the HF tuning circuit being coupled between ground and the corresponding common node; the corresponding common node is configured to provide a corresponding RF output to the corresponding station after coordination; An apparatus, wherein cross-parallel isolation occurs between the LF / MF inductor of the LF / MF regulating circuit and the HF inductor of the HF regulating circuit when the variable LF / MF capacitor or the variable HF capacitor is adjusted.

9. 9. The apparatus of claim 8, wherein the HF inductor presents a high impedance to a corresponding split RF input that effectively isolates the HF tuning circuit from the LF / MF tuning circuit when the corresponding split RF input has low to mid frequency content when the variable LF / MF capacitor is adjusted.

10. 9. The apparatus of claim 8, wherein when the corresponding split RF input has a high frequency content, the LF / MF inductor presents a high impedance to the corresponding split RF input which effectively isolates the LF / MF tuning circuit from the HF tuning circuit when adjusting the variable HF capacitor.

11. 9. The apparatus of claim 8, wherein the corresponding RF power is provided to a corresponding pedestal of the corresponding processing station.

12. 9. The apparatus of claim 8, wherein the corresponding RF power is provided to a corresponding showerhead of the corresponding processing station.

13. 9. The apparatus of claim 8, a corresponding LF / MF actuator coupled to the corresponding variable LF / MF capacitor of a corresponding LF / MF adjustment circuit and configured to adjust the variable LF / MF capacitor; a corresponding LF / MF absolute encoder configured to determine a value of the corresponding variable LF / MF capacitor; a corresponding HF actuator coupled to the corresponding variable HF capacitor of a corresponding HF adjustment circuit and configured to adjust the corresponding variable HF capacitor; a corresponding HF absolute encoder configured to determine a value of the corresponding variable HF capacitor.

14. 9. The apparatus of claim 8, wherein the RF power supplied to each of the processing stations is of a similar value.

15. 1. An assembly for use in a process chamber for depositing a film on a wafer, comprising: a radio frequency (RF) dual source power generator including a low to mid frequency (LF / HF) power generator providing LF / MF power at a low frequency (LF) to a mid frequency (MF) and a high frequency (HF) power generator providing HF power at a high frequency; a split-input RF (SIRF) distribution box configured to receive the LF / MF power and to receive the HF power, the SIRF distribution box further configured to combine and distribute at least one of the LF / MF power and the HF power as a first split RF input, a second split RF input, a third split RF input, and a fourth split input to corresponding MRCC circuits; a first MRCC circuit for a first processing station; a second MRCC circuit for a second processing station; a third MRCC circuit for a third processing station; and a fourth MRCC circuit for a fourth processing station; Each MRCC circuit includes an LF / MF tuning circuit coupled in parallel to the HF tuning circuit between ground and a corresponding common node configured to receive a corresponding split RF input; the LF / MF adjustment circuit includes a variable LF / MF capacitor coupled in series with an LF / MF inductor, the LF / MF adjustment circuit being coupled between ground and the corresponding common node; the HF tuning circuit includes a variable HF capacitor coupled in series with an HF inductor, the HF tuning circuit being coupled between ground and the corresponding common node; the corresponding common node is configured to provide a corresponding RF output to the corresponding station after coordination; An assembly, wherein cross-parallel isolation occurs between the LF / MF inductor of the LF / MF adjusting circuit and the HF inductor of the HF adjusting circuit when the variable LF / MF capacitor or the variable HF capacitor is adjusted.

16. 16. The assembly of claim 15, wherein the HF inductor presents a high impedance to a corresponding split RF input when the corresponding split RF input has low to mid frequency content, effectively isolating the HF tuning circuit from the LF / MF tuning circuit when adjusting the variable LF / MF capacitor.

17. 16. The assembly of claim 15, wherein the LF / MF inductor presents a high impedance to a corresponding split RF input that effectively isolates the LF / MF tuning circuit from the HF tuning circuit when the variable HF capacitor is adjusted, when the corresponding split RF input has a high frequency content.

18. 16. The assembly of claim 15, wherein the corresponding RF power is provided to a corresponding pedestal of the corresponding processing station.

19. 16. The assembly of claim 15, wherein the corresponding RF power is provided to a corresponding showerhead of the corresponding processing station.

20. 16. The assembly of claim 15, a corresponding LF / MF actuator in each MRCC circuit, coupled to the corresponding variable LF / MF capacitor of a corresponding LF / MF adjustment circuit and configured to adjust the variable LF / MF capacitor; a corresponding LF / MF absolute encoder configured to determine a value of the corresponding variable LF / MF capacitor in each MRCC circuit; a corresponding HF actuator in each MRCC circuit, coupled to the corresponding variable HF capacitor of the corresponding HF regulation circuit and configured to adjust the corresponding variable HF capacitor; in each MRCC circuit, a corresponding HF absolute encoder configured to determine a value of the corresponding variable HF capacitor.

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