Semiconductor device and method for manufacturing semiconductor device

Abstract

To provide a semiconductor device suitable for improving performance and downsizing.SOLUTION: A semiconductor device comprises at least one terminal. The terminal 45 includes a cylindrical holder 451 having conductivity, a metal pin 452 inserted into the holder, a terminal support 48 that supports the holder, and a sealing resin 8 that covers the terminal support and a portion of the holder. The sealing resin has a resin main surface facing z1 side in the z direction. The holder has a first surface 454a positioned at an edge on z1 side in the z direction, and a first outer side surface 453a extending in the thickness direction. The first surface is at a position different from the resin main surface 81 in the thickness direction. The first outer side surface is in contact with the sealing resin. The metal pin protrudes further to one side in the thickness direction than the resin main surface.SELECTED DRAWING: Figure 16

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device.

Background Art

[0002] Conventionally, semiconductor devices including power switching elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are known. Such semiconductor devices are mounted on all kinds of electronic devices from industrial equipment to home appliances, information terminals, and automotive equipment. Patent Document 1 discloses a conventional semiconductor device (power module). The semiconductor device described in Patent Document 1 includes a semiconductor element and a support substrate (ceramic substrate). The semiconductor element is, for example, an IGBT made of Si (silicon). The support substrate supports the semiconductor element. The support substrate includes an insulating base material and conductor layers laminated on both surfaces of the base material. The base material is made of, for example, ceramic. Each conductor layer is made of, for example, Cu (copper), and the semiconductor element is joined to one of the conductor layers.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In recent years, energy saving, high performance, and miniaturization of electronic devices have been demanded. For this purpose, improvement in performance and miniaturization of the power module mounted on the electronic device are required.

[0005] One object of the present disclosure is to provide a semiconductor device that is improved over the prior art. In particular, in view of the above circumstances, one object of the present disclosure is to provide a semiconductor device suitable for improving performance and miniaturization.

[0006] The semiconductor device provided by the first aspect of the present disclosure includes a cylindrical holder having conductivity, at least one terminal including a metal pin inserted into the holder, a terminal support for supporting the holder, and a sealing resin covering a part of the holder and the terminal support. The sealing resin has a resin main surface facing one side in the thickness direction, the holder has a first surface located at one end on one side in the thickness direction and a first outer surface extending in the thickness direction, the first surface is at a position different from the resin main surface in the thickness direction, the first outer surface is in contact with the sealing resin, and the metal pin protrudes to one side in the thickness direction from the resin main surface.

[0007] The semiconductor device provided by the second aspect of the present disclosure includes a support substrate having a main surface facing one side in the thickness direction, at least one terminal disposed on the main surface and including a holder having conductivity and a metal pin inserted into the holder, and a sealing resin having a resin main surface facing one side in the thickness direction and covering at least a part of the support substrate. At least one of the at least one terminal has all of the holder exposed from the sealing resin, and the metal pin protrudes to one side in the thickness direction from the resin main surface.

Advantages of the Invention

[0008] According to the above configuration, in the semiconductor device, a structure preferable for improving performance and miniaturization can be provided.

[0009] Other features and advantages of the present disclosure will become clearer from the following detailed description with reference to the accompanying drawings.

Brief Description of the Drawings

[0010]

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[0011] Hereinafter, preferred embodiments of the present disclosure will be specifically described with reference to the drawings. First, with reference to FIGS. 1 to 29, a semiconductor device based on the first side surface of the present disclosure will be described. Thereafter, with reference to FIGS. 30 to 53, a semiconductor device based on the second side surface of the present disclosure will be described. Note that the reference numerals used in FIGS. 1 to 29 (first side surface) and the reference numerals used in FIGS. 30 to 53 (second side surface) are independent of each other. Therefore, for example, the same reference numeral may indicate different members on the first side surface and the second side surface, or different reference numerals may indicate the same (or similar) members on the first side surface and the second side surface.

[0012] The terms "first", "second", "third", etc. in the present disclosure are merely used for identification and are not necessarily intended to assign an order to those objects.

[0013] In the present disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed above a certain object B" include "a certain object A is directly formed on a certain object B", and "a certain object A is formed on a certain object B with another object intervening between the certain object A and the certain object B". Similarly, unless otherwise specified, "a certain object A is disposed on a certain object B" and "a certain object A is disposed above a certain object B" include "a certain object A is directly disposed on a certain object B", and "a certain object A is disposed on a certain object B with another object intervening between the certain object A and the certain object B". Similarly, unless otherwise specified, "a certain object A is located above a certain object B" includes "a certain object A is in contact with a certain object B and a certain object A is located above a certain object B", and "a certain object A is located above a certain object B with another object intervening between the certain object A and the certain object B". Further, unless otherwise specified, "a certain object A overlaps a certain object B when viewed in a certain direction" includes "a certain object A overlaps all of a certain object B", and "a certain object A overlaps a part of a certain object B". Further, in the present disclosure, "a certain surface A faces direction B (one side or the other side)" is not limited to the case where the angle of the surface A with respect to the direction B is 90°, and includes the case where the surface A is inclined with respect to the direction B.

[0014] First Embodiment (First Aspect): Figs. 1 to 22 show a semiconductor device according to a first embodiment based on the first aspect of the present disclosure. The semiconductor device A1 of the present embodiment includes a plurality of first semiconductor elements 10A, a plurality of second semiconductor elements 10B, a support substrate 3, a first terminal 41, a second terminal 42, a plurality of third terminals 43, a fourth terminal 44, a plurality of control terminals 45, a control terminal support 48, a first conduction member 5, a second conduction member 6, and a sealing resin 8.

[0015] FIG. 1 is a perspective view showing a semiconductor device A1. FIGS. 2 and 3 are perspective views of the main part showing the semiconductor device A1. FIG. 4 is a plan view showing the semiconductor device A1. FIG. 5 is a plan view of the main part showing the semiconductor device A1. FIG. 6 is a side view of the main part showing the semiconductor device A1. FIG. 7 is an enlarged plan view of the main part showing the semiconductor device A1. FIGS. 8 and 9 are plan views of the main part showing the semiconductor device A1. FIG. 10 is a side view showing the semiconductor device A1. FIG. 11 is a bottom view showing the semiconductor device A1. FIG. 12 is a cross-sectional view taken along line XII-XII of FIG. 5. FIG. 13 is a cross-sectional view taken along line XIII-XIII of FIG. 5. FIGS. 14 and 15 are enlarged cross-sectional views of the main part showing the semiconductor device A1. FIG. 16 is a partial enlarged view of a part of FIG. 13. FIG. 17 is a partial enlarged view of a part of FIG. 4. FIG. 18 is a cross-sectional view taken along line XVIII-XVIII of FIG. 5. FIG. 19 is a cross-sectional view taken along line XIX-XIX of FIG. 5. FIG. 20 is a cross-sectional view taken along line XX-XX of FIG. 5. FIG. 21 is a cross-sectional view taken along line XXI-XXI of FIG. 5. FIG. 22 is a cross-sectional view taken along line XXII-XXII of FIG. 5.

[0016] For convenience of explanation, three directions orthogonal to each other are defined as the x direction, the y direction, and the z direction. The z direction is an example of the thickness direction, and the x direction is an example of the first direction. Also, one side of the x direction is referred to as the x1 side of the x direction, and the other side of the x direction is referred to as the x2 side of the x direction. Also, one side of the y direction is referred to as the y1 side of the y direction, and the other side of the y direction is referred to as the y2 side of the y direction. Also, one side of the z direction is referred to as the z1 side of the z direction, and the other side of the z direction is referred to as the z2 side of the z direction.

[0017] The plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B are each an electronic component that is a functional center of the semiconductor device A1. The constituent material of each first semiconductor element 10A and each second semiconductor element 10B is, for example, a semiconductor material mainly composed of SiC (silicon carbide). This semiconductor material is not limited to SiC, and may be Si (silicon), GaN (gallium nitride), C (diamond), or the like. Each first semiconductor element 10A and each second semiconductor element 10B are, for example, power semiconductor chips having a switching function such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). In the present embodiment, the case where the first semiconductor element 10A and the second semiconductor element 10B are MOSFETs is shown, but it is not limited thereto, and other transistors such as an IGBT (Insulated Gate Bipolar Transistor) may be used. Each first semiconductor element 10A and each second semiconductor element 10B are the same element. Each first semiconductor element 10A and each second semiconductor element 10B are, for example, n-channel type MOSFETs, but may be p-channel type MOSFETs.

[0018] As shown in FIGS. 14 and 15, the first semiconductor element 10A and the second semiconductor element 10B each have an element main surface 101 and an element back surface 102. In each first semiconductor element 10A and each second semiconductor element 10B, the element main surface 101 and the element back surface 102 are separated in the z direction. The element main surface 101 faces the z1 side in the z direction, and the element back surface 102 faces the z2 side in the z direction.

[0019] In this embodiment, the semiconductor device A1 includes four first semiconductor elements 10A and four second semiconductor elements 10B. However, the number of the first semiconductor elements 10A and the number of the second semiconductor elements 10B are not limited to this configuration and may be appropriately changed according to the performance required for the semiconductor device A1. In the examples of FIGS. 8 and 9, four first semiconductor elements 10A and four second semiconductor elements 10B are arranged respectively. The number of the first semiconductor elements 10A and the number of the second semiconductor elements 10B may be two or three respectively, or may be five or more respectively. The number of the first semiconductor elements 10A and the number of the second semiconductor elements 10B may be equal or different. The number of the first semiconductor elements 10A and the number of the second semiconductor elements 10B is determined by the current capacity handled by the semiconductor device A1.

[0020] The semiconductor device A1 is configured as, for example, a half-bridge type switching circuit. In this case, the plurality of first semiconductor elements 10A constitute the upper arm circuit of the semiconductor device A1, and the plurality of second semiconductor elements 10B constitute the lower arm circuit. In the upper arm circuit, the plurality of first semiconductor elements 10A are connected in parallel with each other. In the lower arm circuit, the first semiconductor elements 10A are connected in parallel with each other. In the lower arm circuit, the plurality of second semiconductor elements 10B are connected in parallel with each other. Each first semiconductor element 10A and each second semiconductor element 10B are connected in series to form a bridge layer.

[0021] As shown in FIGS. 8, 9, 21, etc., each of the plurality of first semiconductor elements 10A is mounted on the first conductive portion 32A of the support substrate 3 described later. In the examples shown in FIGS. 8 and 9, the plurality of first semiconductor elements 10A are arranged side by side in the y direction, for example, and are spaced apart from each other. Each first semiconductor element 10A is conductively joined to the first conductive portion 32A via a conductive joining material 19. When each first semiconductor element 10A is joined to the first conductive portion 32A, the back surface 102 of the element faces the first conductive portion 32A. Note that, different from this embodiment, the plurality of first semiconductor elements 10A may be mounted on a metal member different from a part of a DBC substrate or the like. In this case, the metal member corresponds to the first conductive portion in the present disclosure. This metal member may be supported by, for example, a DBC substrate or the like.

[0022] As shown in FIGS. 8, 9, 20, etc., the plurality of second semiconductor elements 10B are each mounted on the second conductive portion 32B of the support substrate 3 described later. In the examples shown in FIGS. 8 and 9, the plurality of second semiconductor elements 10B are arranged side by side in the y direction, for example, and are spaced apart from each other. Each second semiconductor element 10B is conductively joined to the second conductive portion 32B via a conductive joining material 19. When each second semiconductor element 10B is joined to the second conductive portion 32B, the back surface 102 of the element faces the second conductive portion 32B. As understood from FIG. 9, when viewed in the x direction, the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B may or may not overlap. Note that, unlike this embodiment, the plurality of second semiconductor elements 10B may be mounted on a metal member different from a part of a DBC substrate or the like. In this case, the metal member corresponds to the second conductive portion in the present disclosure. This metal member may be supported by, for example, a DBC substrate or the like.

[0023] The plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B each have a first main surface electrode 11, a second main surface electrode 12, a third main surface electrode 13, and a back surface electrode 15. The configurations of the first main surface electrode 11, the second main surface electrode 12, the third main surface electrode 13, and the back surface electrode 15 described below are common to each first semiconductor element 10A and each second semiconductor element 10B. The first main surface electrode 11, the second main surface electrode 12, and the third main surface electrode 13 are provided on the element main surface 101. The first main surface electrode 11, the second main surface electrode 12, and the third main surface electrode 13 are insulated by an insulating film (not shown). The back surface electrode 15 is provided on the element back surface 102.

[0024] The first main surface electrode 11 is, for example, a gate electrode, and a drive signal (for example, a gate voltage) for driving the first semiconductor element 10A (the second semiconductor element 10B) is input thereto. In the first semiconductor element 10A (the second semiconductor element 10B), the second main surface electrode 12 is, for example, a source electrode, and a source current flows therethrough. The second main surface electrode 12 of the present embodiment has gate fingers 121. The gate fingers 121 are made of, for example, linear insulators extending in the x direction, and divide the second main surface electrode 12 into two in the y direction. The third main surface electrode 13 is, for example, a source sense electrode, and a source current flows therethrough. The back surface electrode 15 is, for example, a drain electrode, and a drain current flows therethrough. The back surface electrode 15 covers the entire area (or substantially the entire area) of the element back surface 102. The back surface electrode 15 is formed, for example, by Ag (silver) plating.

[0025] When a drive signal (gate voltage) is input to the first main surface electrode 11 (gate electrode) of each first semiconductor element 10A (each second semiconductor element 10B), the conduction state and the cutoff state are switched according to this drive signal. In the conduction state, current flows from the back surface electrode 15 (drain electrode) to the second main surface electrode 12 (source electrode), and in the cutoff state, this current does not flow. That is, each first semiconductor element 10A (each second semiconductor element 10B) performs a switching operation. The semiconductor device A1 converts a DC voltage input between one fourth terminal 44 and two first terminals 41 and second terminals 42 into, for example, an AC voltage by the switching functions of the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B, and outputs the AC voltage from the third terminal 43. Each of the plurality of first semiconductor elements 10A corresponds to the first switching element in the present disclosure. Each of the plurality of second semiconductor elements 10B corresponds to the second switching element in the present disclosure.

[0026] In the semiconductor device A1, as shown in FIGS. 5, 8, 9, etc., a thermistor 17 is provided. The thermistor 17 is used as a temperature detection sensor. In addition to the thermistor 17, for example, a configuration including a temperature-sensitive diode or the like may be provided, or a configuration not including the thermistor 17 or the like may be provided.

[0027] The support substrate 3 supports a plurality of first semiconductor elements 10A and a plurality of second semiconductor elements 10B. The specific configuration of the support substrate 3 is not limited in any way and may be constituted by, for example, a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate. The support substrate 3 includes an insulating layer 31, a support conductor 32, and a back metal layer 33. The support conductor 32 includes a first conductive portion 32A and a second conductive portion 32B. The dimension of the support substrate 3 in the z direction is, for example, 0.4 mm or more and 3.0 mm or less.

[0028] The insulating layer 31 is, for example, a ceramic with excellent thermal conductivity. Such a ceramic includes, for example, SiN (silicon nitride). The insulating layer 31 is not limited to ceramics and may be an insulating resin sheet or the like. The insulating layer 31 is, for example, rectangular in plan view. The dimension of the insulating layer 31 in the z direction is, for example, 0.05 mm or more and 1.0 mm or less.

[0029] The first conductive portion 32A supports a plurality of first semiconductor elements 10A, and the second conductive portion 32B supports a plurality of second semiconductor elements 10B. The first conductive portion 32A and the second conductive portion 32B are formed on the upper surface of the insulating layer 31 (the surface facing the z1 side in the z direction). The constituent material of the first conductive portion 32A and the second conductive portion 32B includes, for example, Cu (copper). The constituent material may include, for example, Al (aluminum) other than Cu (copper). The first conductive portion 32A and the second conductive portion 32B are separated in the x direction. The first conductive portion 32A is located on the x1 side in the x direction with respect to the second conductive portion 32B. The first conductive portion 32A and the second conductive portion 32B are each, for example, rectangular in plan view. The first conductive portion 32A and the second conductive portion 32B, together with the first conduction member 5 and the second conduction member 6, constitute a path of the main circuit current switched by the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B.

[0030] The first conductive part 32A has a first main surface 301A. The first main surface 301A is a plane facing the z1 side in the z direction. A plurality of first semiconductor elements 10A are respectively joined to the first main surface 301A of the first conductive part 32A via a conductive joining material 19. The second conductive part 32B has a second main surface 301B. The second main surface 301B is a plane facing the z1 side in the z direction. A plurality of second semiconductor elements 10B are joined to the second main surface 301B of the second conductive part 32B via a conductive joining material 19. The constituent material of the conductive joining material 19 is not particularly limited, and for example, it is solder, a metal paste material, or a sintered metal. The dimension of the first conductive part 32A and the second conductive part 32B in the z direction is, for example, 0.1 mm or more and 1.5 mm or less.

[0031] The back metal layer 33 is formed on the lower surface of the insulating layer 31 (the surface facing the z2 side in the z direction). The constituent material of the back metal layer 33 is the same as that of the support conductor 32. The back metal layer 33 has a back surface 302. The back surface 302 is a plane facing the z2 side in the z direction. In the example shown in FIG. 11, the back surface 302 is, for example, exposed from the sealing resin 8. A heat dissipation member (for example, a heat sink) not shown can be attached to the back surface 302. The back surface 302 may not be exposed from the sealing resin 8 and may be covered with the sealing resin 8. The back metal layer 33 overlaps both the first conductive part 32A and the second conductive part 32B in plan view.

[0032] The first terminal 41, the second terminal 42, the plurality of third terminals 43, and the fourth terminal 44 are each made of a plate-shaped metal plate. This metal plate contains, for example, Cu (copper) or a Cu (copper) alloy. In the examples shown in FIGS. 1 to 5, 8, 9, and 11, the semiconductor device A1 includes one each of the first terminal 41, the second terminal 42, and the fourth terminal 44, and two third terminals 43, but the number of each terminal is not limited at all.

[0033] A DC voltage to be subjected to power conversion is input to the first terminal 41, the second terminal 42, and the fourth terminal 44. The fourth terminal 44 is the positive electrode (P terminal), and the first terminal 41 and the second terminal 42 are each the negative electrode (N terminal). An AC voltage power-converted by the first semiconductor element 10A and the second semiconductor element 10B is output from the plurality of third terminals 43. The first terminal 41, the second terminal 42, the plurality of third terminals 43, and the fourth terminal 44 each include a portion covered by the encapsulating resin 8 and a portion exposed from the encapsulating resin 8.

[0034] As shown in FIG. 13, the fourth terminal 44 is conductively joined to the first conductive portion 32A. The method of conductive joining is not limited in any way, and methods such as ultrasonic joining, laser joining, welding, etc., or methods using solder, metal paste, silver sintered body, etc. are appropriately employed. As shown in FIGS. 8 and 9, etc., the fourth terminal 44 is located on the x1 side in the x direction with respect to the plurality of first semiconductor elements 10A and the first conductive portion 32A. The fourth terminal 44 is conductively connected to the first conductive portion 32A and, via the first conductive portion 32A, is conductively connected to the back surface electrode 15 (drain electrode) of each first semiconductor element 10A.

[0035] The first terminal 41 and the second terminal 42 are conductively connected to the second conductive member 6. In the present embodiment, the first terminal 41 and the second conductive member 6 are integrally formed. The fact that the first terminal 41 and the second conductive member 6 are integrally formed means, for example, that they are formed by performing cutting and bending processes on a single metal plate material and do not include a joining material or the like for joining them to each other. Also, in the present embodiment, the second terminal 42 and the second conductive member 6 are integrally formed. Note that the first terminal 41 and the second terminal 42 only need to be configured to be conductively connected to the second conductive member 6, and, unlike the present embodiment, may have a configuration having a joining portion for joining them to each other. As shown in FIGS. 5 and 8, etc., the first terminal 41 and the second terminal 42 are each located on the x1 side in the x direction with respect to the plurality of first semiconductor elements 10A and the first conductive portion 32A. The first terminal 41 and the second terminal 42 are each conductively connected to the second conductive member 6 and, via the second conductive member 6, are conductively connected to the second main surface electrode 12 (source electrode) of each second semiconductor element 10B.

[0036] As shown in FIGS. 1 to 5 and FIG. 11, etc., the first terminal 41, the second terminal 42, and the fourth terminal 44 each protrude from the encapsulating resin 8 to the x1 side in the x direction in the semiconductor device A1. The first terminal 41, the second terminal 42, and the fourth terminal 44 are spaced apart from each other. The first terminal 41 and the second terminal 42 are located on opposite sides of each other with the fourth terminal 44 interposed therebetween in the y direction. The first terminal 41 is located on the y1 side in the y direction of the fourth terminal 44, and the second terminal 42 is located on the y2 side in the y direction of the fourth terminal 44. The first terminal 41, the second terminal 42, and the fourth terminal 44 overlap each other when viewed in the y direction.

[0037] As can be understood from FIGS. 8, 9, and 12, the two third terminals 43 are each conductively joined to the second conductive portion 32B. The method of conductive joining is not limited in any way, and methods such as ultrasonic joining, laser joining, welding, etc., or methods using solder, metal paste, silver sintered body, etc., are appropriately adopted. As shown in FIG. 8, etc., the two third terminals 43 are each located on the x2 side in the x direction with respect to the plurality of second semiconductor elements 10B and the second conductive portion 32B. Each third terminal 43 is electrically connected to the second conductive portion 32B and, via the second conductive portion 32B, is electrically connected to the back surface electrode 15 (drain electrode) of each second semiconductor element 10B. Note that the number of the third terminals 43 is not limited to two, and may be, for example, one or three or more. For example, when there is one third terminal 43, it is desirable that it is connected to the central portion of the second conductive portion 32B in the y direction.

[0038] The plurality of control terminals 45 are each pin-shaped terminals for controlling the driving of each first semiconductor element 10A and each second semiconductor element 10B. The plurality of control terminals 45 are each, for example, press-fit terminals. The plurality of control terminals 45 include a plurality of first control terminals 46A to 46E and a plurality of second control terminals 47A to 47D. The plurality of first control terminals 46A to 46E are used for controlling each first semiconductor element 10A, etc. The plurality of second control terminals 47A to 47D are used for controlling each second semiconductor element 10B, etc.

[0039] The plurality of first control terminals 46A to 46E are arranged at intervals in the y direction. As shown in FIGS. 8, 13, 22, etc., each of the first control terminals 46A to 46E is supported by the first conductive portion 32A via a control terminal support 48 (the first support portion 48A described later). As shown in FIGS. 5 and 8, each of the first control terminals 46A to 46E is located between the plurality of first semiconductor elements 10A and the first terminal 41, the second terminal 42, and the fourth terminal 44 in the x direction.

[0040] The first control terminal 46A is a terminal (gate terminal) for inputting a drive signal to the plurality of first semiconductor elements 10A. A drive signal for driving the plurality of first semiconductor elements 10A is input to the first control terminal 46A (for example, a gate voltage is applied).

[0041] The first control terminal 46B is a terminal (source sense terminal) for detecting a source signal of the plurality of first semiconductor elements 10A. A voltage (voltage corresponding to the source current) applied to each of the second main surface electrodes 12 (source electrodes) of the plurality of first semiconductor elements 10A is detected from the first control terminal 46B.

[0042] The first control terminal 46C and the first control terminal 46D are terminals that conduct to the thermistor 17.

[0043] The first control terminal 46E is a terminal (drain sense terminal) for detecting a drain signal of the plurality of first semiconductor elements 10A. A voltage (voltage corresponding to the drain current) applied to each of the back surface electrodes 15 (drain electrodes) of the plurality of first semiconductor elements 10A is detected from the first control terminal 46E.

[0044] The plurality of second control terminals 47A to 47D are arranged at intervals in the y direction. As shown in FIGS. 8 and 13, etc., each of the second control terminals 47A to 47D is supported by the second conductive portion 32B via a control terminal support 48 (the second support portion 48B described later). As shown in FIGS. 5 and 8, each of the second control terminals 47A to 47D is located between the plurality of second semiconductor elements 10B and the two third terminals 43 in the x direction.

[0045] The second control terminal 47A is a terminal (gate terminal) for inputting drive signals to a plurality of second semiconductor elements 10B. A drive signal for driving the plurality of second semiconductor elements 10B is input to the second control terminal 47A (for example, a gate voltage is applied). The second control terminal 47B is a terminal (source sense terminal) for detecting source signals of the plurality of second semiconductor elements 10B. A voltage (voltage corresponding to the source current) applied to each second main surface electrode 12 (source electrode) of the plurality of second semiconductor elements 10B is detected from the second control terminal 47B. The second control terminal 47C and the second control terminal 47D are terminals that conduct to the thermistor 17.

[0046] The plurality of control terminals 45 (the plurality of first control terminals 46A to 46E and the plurality of second control terminals 47A to 47D) each include a holder 451 and a metal pin 452.

[0047] The holder 451 is made of a conductive material. As shown in FIGS. 14 and 15, the holder 451 is joined to a control terminal support 48 (the first metal layer 482 described later) via a conductive bonding material 459. As shown in FIG. 16, the holder 451 includes a cylindrical portion 453, a first flange portion 454, and a second flange portion 455.

[0048] The cylindrical portion 453 extends in the z direction and is, for example, cylindrical. The cylindrical portion 453 has a first outer surface 453a and a first inner surface 453b. The first outer surface 453a is a surface facing outward in the radial direction of the cylindrical portion 453 when viewed in the z direction and extends in the z direction. The first inner surface 453b faces the opposite side of the first outer surface 453a and is a surface facing inward in the radial direction of the cylindrical portion 453 when viewed in the z direction and extends in the z direction.

[0049] The first flange portion 454 is connected to the end portion on the z1 side in the z direction of the cylindrical portion 453. The first flange portion 454 has a first surface 454a and a second surface 454b. The first surface 454a is a surface facing the z1 side in the z direction. The first surface 454a is located at the end on the z1 side in the z direction in the holder 451. The first surface 454a forms an annular shape (circular annular or rectangular annular) when viewed in the z direction. The second surface 454b is located on the z2 side in the z direction with respect to the first surface 454a and is a surface facing the z2 side in the z direction.

[0050] The second flange portion 455 is connected to the end portion on the z2 side in the z direction of the cylindrical portion 453. In the present embodiment, the second flange portion 455 is joined to the control terminal support 48 (the first metal layer 482 described later) via the conductive joining material 459.

[0051] The metal pin 452 is inserted through at least the first flange portion 454 and the cylindrical portion 453 of the holder 451. A part of the holder 451 is covered with the sealing resin 8. At least the first outer surface 453a (cylindrical portion 453) is in contact with the sealing resin 8. In the example shown in FIG. 16, all of the first outer surface 453a of the cylindrical portion 453 and the second surface 454b of the first flange portion 454 are in contact with the sealing resin 8.

[0052] The metal pin 452 is a rod-shaped member extending in the z direction. The metal pin 452 is supported by being press-fitted into the holder 451. The metal pin 452 is electrically connected to the control terminal support 48 (the first metal layer 482 described later) at least via the holder 451. In the examples shown in FIGS. 14 to 16, the metal pin 452 is not inserted to the lower end (the end portion on the z2 side in the z direction) of the holder 451, and the lower end of the metal pin 452 is separated from the conductive joining material 459. In this case, the metal pin 452 is electrically connected to the control terminal support 48 (the first metal layer 482) via the holder 451. Different from the illustrated example, when the lower end (the end portion on the z2 side in the z direction) of the metal pin 452 is in contact with the conductive joining material 459 in the insertion hole of the holder 451, the metal pin 452 is electrically connected to the control terminal support 48 via the conductive joining material 459. The metal pin 452 protrudes on the z1 side in the z direction from the upper surface of the sealing resin 8 (the resin main surface 81 described later).

[0053] The control terminal support 48 supports a plurality of control terminals 45. The control terminal support 48 is interposed between the first main surface 301A and the second main surface 301B and the plurality of control terminals 45 in the z direction.

[0054] The control terminal support 48 includes a first support portion 48A and a second support portion 48B. The first support portion 48A is disposed on the first conductive portion 32A and supports a plurality of first control terminals 46A to 46E among the plurality of control terminals 45. As shown in FIG. 14, the first support portion 48A is joined to the first conductive portion 32A via a joining material 49. The joining material 49 may be conductive or insulating, and for example, solder is used. The second support portion 48B is disposed on the second conductive portion 32B and supports a plurality of second control terminals 47A to 47D among the plurality of control terminals 45. As shown in FIG. 15, the second support portion 48B is joined to the second conductive portion 32B via a joining material 49.

[0055] The control terminal support 48 (each of the first support portion 48A and the second support portion 48B) is composed of, for example, a DBC (Direct Bonded Copper) substrate. The control terminal support 48 has an insulating layer 481, a first metal layer 482, and a second metal layer 483 laminated on each other.

[0056] The insulating layer 481 is made of, for example, ceramics. The insulating layer 481 is, for example, rectangular in plan view.

[0057] The first metal layer 482 is formed on the upper surface of the insulating layer 481 as shown in FIGS. 14 and 15. Each control terminal 45 stands on the first metal layer 482. The first metal layer 482 contains, for example, Cu (copper) or a Cu (copper) alloy. As shown in FIG. 8, the first metal layer 482 includes a first portion 482A, a second portion 482B, a third portion 482C, a fourth portion 482D, a fifth portion 482E, and a sixth portion 482F. The first portion 482A, the second portion 482B, the third portion 482C, the fourth portion 482D, the fifth portion 482E, and the sixth portion 482F are separated from each other and insulated.

[0058] In the first part 482A, a plurality of wires 71 are joined, and through each wire 71, conduction is made to the first main surface electrode 11 (gate electrode) of each first semiconductor element 10A (each second semiconductor element 10B). The first part 482A and the sixth part 482F are connected by a plurality of wires 73. Thereby, the sixth part 482F is conducted to the first main surface electrode 11 (gate electrode) of each first semiconductor element 10A (each second semiconductor element 10B) through the wires 73 and 71. As shown in FIG. 8, a first control terminal 46A is joined to the sixth part 482F of the first support part 48A, and a second control terminal 47A is joined to the sixth part 482F of the second support part 48B.

[0059] In the second part 482B, a plurality of wires 72 are joined, and through each wire 72, conduction is made to the third main surface electrode 13 (source sense electrode) of each first semiconductor element 10A (each second semiconductor element 10B). As shown in FIG. 8, a first control terminal 46B is joined to the second part 482B of the first support part 48A, and a second control terminal 47B is joined to the second part 482B of the second support part 48B.

[0060] In the third part 482C and the fourth part 482D, a thermistor 17 is joined. As shown in FIG. 8, first control terminals 46C and 46D are joined to the third part 482C and the fourth part 482D of the first support part 48A, and second control terminals 47C and 47D are joined to the third part 482C and the fourth part 482D of the second support part 48B.

[0061] In the fifth part 482E of the first support part 48A, a wire 74 is joined, and through the wire 74, conduction is made to the first conductive part 32A. As shown in FIG. 8, a first control terminal 46E is joined to the fifth part 482E of the first support part 48A. The fifth part 482E of the second support part 48B is not conducted to other component parts. Each of the above wires 71 to 74 is, for example, a bonding wire. The constituent material of each of the wires 71 to 74 includes, for example, any one of Au (gold), Al (aluminum), or Cu (copper).

[0062] As shown in FIGS. 14 and 15, the second metal layer 483 is formed on the lower surface of the insulating layer 481. The second metal layer 483 of the first support portion 48A is joined to the first conductive portion 32A via the bonding material 49 as shown in FIG. 14. The second metal layer 483 of the second support portion 48B is joined to the second conductive portion 32B via the bonding material 49 as shown in FIG. 15.

[0063] The first conduction member 5 and the second conduction member 6, together with the first conductive portion 32A and the second conductive portion 32B, constitute a path of the main circuit current that is switched by the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B. The first conduction member 5 and the second conduction member 6 are separated from the first main surface 301A and the second main surface 301B toward the z1 side in the z direction and overlap the first main surface 301A and the second main surface 301B in a plan view. In the present embodiment, each of the first conduction member 5 and the second conduction member 6 is constituted by a metal plate material. The metal includes, for example, Cu (copper) or a Cu (copper) alloy. Specifically, the first conduction member 5 and the second conduction member 6 are appropriately bent metal plate materials.

[0064] The first conduction member 5 is connected to the second main surface electrode 12 (source electrode) of each first semiconductor element 10A and the second conductive portion 32B, and conducts the second main surface electrode 12 of each first semiconductor element 10A and the second conductive portion 32B. The first conduction member 5 constitutes a path of the main circuit current that is switched by the plurality of first semiconductor elements 10A. As shown in FIGS. 7 and 8, the first conduction member 5 includes a main portion 51, a plurality of first joining portions 52, and a plurality of second joining portions 53.

[0065] The main part 51 is a strip-shaped part that is located between a plurality of first semiconductor elements 10A and a second conductive part 32B in the x direction and extends in the y direction in a plan view. The main part 51 overlaps both the first conductive part 32A and the second conductive part 32B in a plan view and is separated from the first main surface 301A and the second main surface 301B by z1 on the z direction side. As shown in FIG. 18 and the like, the main part 51 is located on the z2 side in the z direction with respect to the third path part 66 and the fourth path part 67 of the second conduction member 6 described later, and is closer to the first main surface 301A and the second main surface 301B than the third path part 66 and the fourth path part 67.

[0066] In the present embodiment, the main part 51 is arranged in parallel with the first main surface 301A and the second main surface 301B.

[0067] As shown in FIG. 8 and the like, the main part 51 extends in series corresponding to the region where a plurality of first semiconductor elements 10A are arranged in the y direction. In the present embodiment, as shown in FIGS. 7, 8, 13, and the like, a plurality of first openings 514 are formed in the main part 51. Each of the plurality of first openings 514 is, for example, a through hole that penetrates in the z direction (the plate thickness direction of the main part 51). The plurality of first openings 514 are arranged at intervals in the y direction. The plurality of first openings 514 are provided corresponding to each of the plurality of first semiconductor elements 10A. In the present embodiment, four first openings 514 are provided in the main part 51, and the positions of these first openings 514 and the plurality (four) of first semiconductor elements 10A in the y direction are equal to each other.

[0068] In the present embodiment, as shown in FIGS. 8, 13, and the like, each first opening 514 overlaps the gap between the first conductive part 32A and the second conductive part 32B in a plan view. The plurality of first openings 514 are formed to facilitate the flow of the resin material between the upper side (z1 side in the z direction) and the lower side (z2 side in the z direction) in the vicinity of the main part 51 (the first conduction member 5) when injecting a resin material with fluidity to form the sealing resin 8.

[0069] As shown in FIG. 8 and the like, the plurality of first joint portions 52 and the plurality of second joint portions 53 are each connected to the main portion 51 and are arranged corresponding to the plurality of first semiconductor elements 10A. Specifically, each first joint portion 52 is located on the x1 side in the x direction with respect to the main portion 51. Each second joint portion 53 is located on the x2 side in the x direction with respect to the main portion 51. As shown in FIG. 14, each first joint portion 52 and the second main surface electrode 12 of any one of the corresponding first semiconductor elements 10A are joined via a conductive joining material 59. Each second joint portion 53 and the second conductive portion 32B are joined via a conductive joining material 59. The constituent material of the conductive joining material 59 is not particularly limited, and examples thereof include solder, a metal paste material, or a sintered metal. In the present embodiment, the first joint portion 52 has two portions separated in the y direction. These two portions are joined to the second main surface electrode 12 on both sides in the y direction with the gate finger 121 of the second main surface electrode 12 of the first semiconductor element 10A interposed therebetween.

[0070] The second conduction member 6 electrically connects the second main surface electrode 12 (source electrode) of each second semiconductor element 10B to the first terminal 41 and the second terminal 42. The second conduction member 6 is integrally formed with the first terminal 41 and the second terminal 42. The second conduction member 6 constitutes a path for the main circuit current switched by the plurality of second semiconductor elements 10B. As shown in FIGS. 5 to 7, 12, 13, and 18 to 22, the second conduction member 6 includes a plurality of third joint portions 61, a first path portion 64, a second path portion 65, a plurality of third path portions 66, and a fourth path portion 67. Also, in the illustrated example, the second conduction member 6 includes a first stepped portion 602 and a second stepped portion 603.

[0071] The plurality of third joint portions 61 are portions individually joined to the plurality of second semiconductor elements 10B. Each third joint portion 61 and the second main surface electrode 12 of each second semiconductor element 10B are joined via a conductive joining material 69. The constituent material of the conductive joining material 69 is not particularly limited, and examples thereof include solder, a metal paste material, or a sintered metal. In the present embodiment, the third joint portion 61 has two flat portions 611 and two first inclined portions 612.

[0072] The two flat portions 611 are arranged side by side in the y direction. The two flat portions 611 are spaced apart from each other in the y direction. The shape of the flat portion 611 is not limited at all. In the illustrated example, it is rectangular. The two flat portions are joined to the second main surface electrode 12 on both sides in the y direction with the gate fingers 121 of the second main surface electrode 12 of the second semiconductor element 10B interposed therebetween.

[0073] The two first inclined portions 612 are connected to the outside of the two flat portions 611 in the y direction. That is, the first inclined portion 612 located on the y1 side in the y direction is connected to the flat portion 611 located on the y1 side in the y direction on the y1 side in the y direction. Also, the first inclined portion 612 located on the y2 side in the y direction is connected to the flat portion 611 located on the y2 side in the y direction on the y2 side in the y direction. The first inclined portion 612 is inclined so as to be located on the z1 side in the z direction as it is separated from the flat portion 611 in the y direction.

[0074] The first path portion 64 is interposed between the plurality of third joint portions 61 and the first terminal 41. In the illustrated example, the first path portion 64 is connected to the first terminal 41 via the first step portion 602. The first path portion 64 overlaps the first conductive portion 32A in plan view. The first path portion 64 has a shape extending in the x direction as a whole.

[0075] The first path portion 64 includes a first strip portion 641 and a first extension portion 643. The first strip portion 641 is located on the x2 side in the x direction with respect to the first terminal 41 and is substantially parallel to the first main surface 301A. The first strip portion 641 has a shape extending in the x direction as a whole. In the illustrated example, the first strip portion 641 has a recess 649. The recess 649 is a portion where a part of the first strip portion 641 is recessed on the y1 side in the y direction. In FIGS. 5 and 7, the first conductive portion 32A appears through the recess 649.

[0076] The first extending portion 643 extends from the side end on the y1 side in the y direction of the first strip portion 641 toward the z2 side in the z direction. The first extending portion 643 is separated from the first conductive portion 32A. In the illustrated example, the first extending portion 643 has a shape along the z direction and is a long rectangular shape with the x direction as the longitudinal direction. Note that the first path portion 64 may be configured not to have the first extending portion 643.

[0077] The second path portion 65 is interposed between the plurality of third joint portions 61 and the second terminal 42. In the illustrated example, the second path portion 65 is connected to the second terminal 42 via the second step portion 603. The second path portion 65 overlaps the first conductive portion 32A in a plan view. The second path portion 65 has a shape extending in the x direction as a whole.

[0078] The second path portion 65 includes a second strip portion 651 and a second extending portion 653. The second strip portion 651 is located on the x2 side in the x direction with respect to the second terminal 42 and is substantially parallel to the first main surface 301A. The second strip portion 651 has a shape extending in the x direction as a whole. In the illustrated example, the second strip portion 651 has a recess 659. The recess 659 is a portion where a part of the second strip portion 651 is recessed toward the y2 side in the y direction. In FIGS. 5 and 7, the first conductive portion 32A appears through the recess 659.

[0079] The second extending portion 653 extends from the side end on the y2 side in the y direction of the second strip portion 651 toward the z2 side in the z direction. The second extending portion 653 is separated from the first conductive portion 32A. The second extending portion 653 has a shape along the z direction similar to the first extending portion 643 and is a long rectangular shape with the x direction as the longitudinal direction. Note that the second path portion 65 may be configured not to have the second extending portion 653.

[0080] The plurality of third path portions 66 are individually connected to the plurality of third junction portions 61. Each third path portion 66 has a shape extending in the x direction and is arranged at intervals from each other in the y direction. The number of the plurality of third path portions 66 is not limited at all. In the illustrated example, five third path portions 66 are arranged. Each third path portion 66 is arranged so as to be positioned between the plurality of second semiconductor elements 10B in the y direction or to be positioned outside the plurality of second semiconductor elements 10B in the y direction.

[0081] Concave portions 669 are formed in two third path portions 66 located on both outer sides in the y direction. The concave portions 669 are recessed from the inner side to the outer side in the y direction. In the illustrated example, one concave portion 669 is formed in each of the two third path portions 66. In FIGS. 5 and 7, the second conductive portion 32B appears through these concave portions 669.

[0082] In the present embodiment, one third junction portion 61 is arranged between two adjacent third path portions 66 in the y direction. In one third junction portion 61, the first inclined portion 612 located on the y1 side in the y direction is connected to the third path portion 66 located on the y1 side in the y direction among the two third path portions 66 adjacent to each other in the y direction. In one third junction portion 61, the first inclined portion 612 located on the y2 side in the y direction is connected to the third path portion 66 located on the y2 side in the y direction among the two third path portions 66 adjacent to each other in the y direction.

[0083] The fourth path portion 67 is connected to the ends on the x1 side in the x direction of the plurality of third path portions 66. The fourth path portion 67 has a shape extending long in the y direction. The fourth path portion 67 is connected to the ends on the x2 side in the x direction of the first strip portion 641 of the first path portion 64 and the second strip portion 651 of the second path portion 65. In the illustrated example, the first path portion 64 is connected to the end on the y1 side in the y direction of the fourth path portion 67. Also, the second path portion 65 is connected to the end on the y2 side in the y direction of the fourth path portion 67.

[0084] The encapsulating resin 8 covers a plurality of first semiconductor elements 10A, a plurality of second semiconductor elements 10B, the support substrate 3 (excluding the back surface 302), portions of the first terminal 41, the second terminal 42, the plurality of third terminals 43, and the fourth terminal 44, and portions of the plurality of control terminals 45, the control terminal support 48, the first conductive member 5, the second conductive member 6, and the plurality of wires 71 to 74, respectively. The encapsulating resin 8 is made of, for example, a black epoxy resin. The encapsulating resin 8 is formed, for example, by mold molding. The encapsulating resin 8 has, for example, a dimension in the x direction of about 35 mm to 60 mm, a dimension in the y direction of about 35 mm to 50 mm, and a dimension in the z direction of about 4 mm to 15 mm. These dimensions are the sizes of the largest portions along each direction. The encapsulating resin 8 has a resin front surface 81, a resin back surface 82, and a plurality of resin side surfaces 831 to 834.

[0085] The resin front surface 81 and the resin back surface 82 are spaced apart in the z direction as shown in FIGS. 10, 12, 20, etc. The resin front surface 81 faces the z1 side in the z direction, and the resin back surface 82 faces the z2 side in the z direction. From the resin front surface 81, the metal pins 452 of the plurality of control terminals 45 (the plurality of first control terminals 46A to 46E and the plurality of second control terminals 47A to 47D) protrude. The resin back surface 82 is in a frame shape surrounding the back surface 302 (the lower surface of the back surface metal layer 33) of the support substrate 3 in a plan view as shown in FIG. 11. The back surface 302 of the support substrate 3 is exposed from the resin back surface 82 and is, for example, flush with the resin back surface 82. The plurality of resin side surfaces 831 to 834 are each connected to both the resin front surface 81 and the resin back surface 82 and are sandwiched therebetween in the z direction. As shown in FIG. 4, etc., the resin side surface 831 and the resin side surface 832 are spaced apart in the x direction. The resin side surface 831 faces the x2 side in the x direction, and the resin side surface 832 faces the x1 side in the x direction. Two third terminals 43 protrude from the resin side surface 831, and the first terminal 41, the second terminal 42, and the fourth terminal 44 protrude from the resin side surface 832. As shown in FIG. 4, etc., the resin side surface 833 and the resin side surface 834 are spaced apart in the y direction. The resin side surface 833 faces the y2 side in the y direction, and the resin side surface 834 faces the y1 side in the y direction.

[0086] In the present embodiment, as shown in FIGS. 1, 4, 13, 22, etc., a plurality of first recesses 810 are formed in the resin main surface 81. Each of the plurality of first recesses 810 is recessed from the resin main surface 81 toward the z2 side in the z direction. The plurality of first recesses 810 are provided corresponding to each of the plurality of control terminals 45.

[0087] As shown in FIGS. 16 and 17, the first recess 810 overlaps all of the cylindrical portions 453 of the holder 451 in a plan view. In the illustrated example, the first recess 810 has a recess inner surface 811 and a recess bottom surface 812. The recess inner surface 811 is connected to the resin main surface 81 and extends toward the z2 side in the z direction. In the illustrated example, the cross section of the recess inner surface 811 orthogonal to the z direction is circular. The recess bottom surface 812 is connected to the end of the recess inner surface 811 on the z2 side in the z direction and is a plane facing the z1 side in the z direction.

[0088] The recess bottom surface 812 surrounds the first surface 454a of the holder 451 (the first flange portion 454) in a plan view. Also, the first surface 454a and the recess bottom surface 812 are flush. Such a first recess 810 is, for example, a trace formed by molding the sealing resin 8 while pressing the upper end (the first flange portion 454) of the holder 451 with a pin or the like having a shape corresponding to the first recess 810. The fact that the first recess 810 is a trace during molding is the same for the first recess 810 in each of the following modification examples and the like. The first flange portion 454 is located on the z2 side in the z direction with respect to the resin main surface 81. As shown in FIG. 16, all of the first outer surface 453a of the cylindrical portion 453 and the second surface 454b of the first flange portion 454 are in contact with the sealing resin 8. On the other hand, the first inner surface 453b of the cylindrical portion 453 and the first surface 454a of the first flange portion 454 are exposed from the sealing resin 8. In the examples shown in FIGS. 16 and 17, the first recess 810 overlaps all of the first flange portion 454 when viewed in the z direction. Thereby, the diameter (the maximum value of the inner diameter dimension) of the first recess 810 is larger than the outer diameter dimension of the first flange portion 454.

[0089] The bottom surface 812 of the recess and the flush first surface 454a are located at positions different from the resin main surface 81 in the z direction. Specifically, the first surface 454a is located on the z2 side in the z direction with respect to the resin main surface 81. In the present embodiment, a first dimension L1, which is the distance in the z direction between the resin main surface 81 and the first surface 454a, is smaller than a second dimension L2, which is the length in the z direction of the holder 451. Preferably, the ratio of the distance (first dimension L1) in the z direction between the resin main surface 81 and the first surface 454a to the length (second dimension L2) in the z direction of the holder 451 is 1 / 3 or more.

[0090] In the examples shown in FIGS. 16 and 17, although the inner surface 811 of the recess is cylindrical, a draft angle in the mold molding may be provided. When a draft angle is provided on the inner surface 811 of the recess, the inner surface 811 of the recess has a conical shape that slopes so that the inner diameter dimension becomes smaller as it goes toward the z2 side in the z direction. The angle of the draft of the inner surface 811 of the recess is appropriately set, for example, in the range of 0 to 30°. Further, when the inner surface 811 of the recess slopes in a conical shape, if the inclination angle is relatively large, the inner diameter dimension of the lower end (the end on the z2 side in the z direction) of the inner surface 811 of the recess may become smaller than the outer diameter dimension of the first flange portion 454. In such a case, the above-described bottom surface 812 of the recess is not formed. The lower end of the inner surface 811 of the recess is in contact with the first surface 454a and becomes the edge of the recess.

[0091] As shown in FIG. 4, a plurality of recesses 832a are formed in the resin side surface 832. Each recess 832a is a portion that is recessed in the x direction in plan view. The plurality of recesses 832a include those formed between the first terminal 41 and the fourth terminal 44 and those formed between the second terminal 42 and the fourth terminal 44 in plan view. The plurality of recesses 832a are provided to increase the creepage distance along the resin side surface 832 between the first terminal 41 and the fourth terminal 44 and the creepage distance along the resin side surface 832 between the second terminal 42 and the fourth terminal 44.

[0092] The sealing resin 8 has a plurality of protruding portions 851 as shown in FIGS. 1, 12, 13, etc. Each of the plurality of protruding portions 851 protrudes from the resin main surface 81 toward the z1 side in the z direction. The plurality of protruding portions 851 are arranged near the four corners of the sealing resin 8 in a plan view. A protruding end surface 851a is formed at the tip (the end portion on the z1 side in the z direction) of each protruding portion 851. Each protruding end surface 851a in the plurality of protruding portions 851 is parallel (or substantially parallel) to the resin main surface 81 and lies on the same plane (x-y plane). Each protruding portion 851 is, for example, a frustum of a cone with a bottom. The plurality of protruding portions 851 are used as spacers when the semiconductor device A1 is mounted on a control circuit board or the like of a device that uses the power generated by the semiconductor device A1. Each of the plurality of protruding portions 851 has a recess 851b and an inner wall surface 851c formed in the recess 851b. The shape of each protruding portion 851 may be columnar, and preferably cylindrical. The shape of the recess 851b is cylindrical, and in a plan view, the inner wall surface 851c is preferably a single perfect circle.

[0093] The semiconductor device A1 may be mechanically fixed to a control circuit board or the like by a method such as screwing. In this case, screw threads of a screw can be formed on the inner wall surface 851c of the recess 851b in the plurality of protruding portions 851. An insert nut may be embedded in the recess 851b in the plurality of protruding portions 851.

[0094] Next, the operation of this embodiment will be described.

[0095] The holder 451 that constitutes each control terminal 45 has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the end on the z1 side in the z direction in the holder 451. The first surface 454a is at a position different from the resin main surface 81 in the z direction. The first outer surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pin 452 that constitutes each control terminal 45 protrudes to the z1 side in the z direction from the resin main surface 81. According to such a configuration, the plurality of control terminals 45 are arranged in a region surrounded by the resin main surface 81 (sealing resin 8) in a plan view. Such a semiconductor device A1 can be miniaturized in a plan view. Also, the first surface 454a is at a position different from the resin main surface 81 in the z direction. According to such a configuration, the creepage distance along the surface (such as the resin main surface 81) of the sealing resin 8 can be increased between adjacent control terminals 45. Therefore, the semiconductor device A1 is suitable for increasing the withstand voltage of adjacent control terminals 45 while achieving miniaturization in a plan view.

[0096] The holder 451 includes a cylindrical portion 453 extending in the z direction and a first flange portion 454 connected to the end on the z1 side in the z direction of the cylindrical portion 453. The first flange portion 454 has a first surface 454a facing the z1 side in the z direction. The sealing resin 8 has a first recess 810. The first recess 810 is recessed from the resin main surface 81 to the z1 side in the z direction. The first flange portion 454 is located on the z2 side in the z direction with respect to the resin main surface 81. According to the configuration in which the sealing resin 8 has the above-mentioned first recess 810, the first surface 454a (first flange portion 454) can be appropriately arranged at a position different from the resin main surface 81 in the z direction.

[0097] Also, the first recess 810 overlaps all of the cylindrical portion 453 in a plan view (when viewed in the z direction). Thereby, when the metal pin 452 is press-fitted into the holder 451, it is possible to insert the metal pin 452 into the holder 451 (cylindrical portion 453) while allowing the lower end of the metal pin 452 to enter the first recess 810, and the workability during the press-fitting is excellent.

[0098] The first recess 810 has a recess inner surface 811 and a recess bottom surface 812. The recess bottom surface 812 faces the z1 side in the z direction and surrounds the first surface 454a when viewed in the z direction. Further, all of the first surface 454a is exposed from the sealing resin 8. According to such a configuration, in a plan view, the visibility of the first surface 454a (the first flange portion 454) surrounded by the recess bottom surface 812 is excellent. Thereby, the workability when press-fitting the metal pin 452 into the holder 451 is further improved. Also, according to the configuration in which the recess bottom surface 812 of the first recess 810 surrounds the first surface 454a (the first flange portion 454) in a plan view, the creepage distance along the surface of the sealing resin 8 can be made larger in the adjacent control terminals 45. This is more preferable for increasing the withstand voltage of the adjacent control terminals 45.

[0099] The distance (the first dimension L1) in the z direction between the resin main surface 81 and the first surface 454a is smaller than the length (the second dimension L2) in the z direction of the holder 451. The ratio of the distance (the first dimension L1) in the z direction between the resin main surface 81 and the first surface 454a to the length (the second dimension L2) in the z direction of the holder 451 is, for example, 50% or more. According to such a configuration, while avoiding an increase in the dimension of the sealing resin 8 in the z direction, the creepage distance along the surface of the sealing resin 8 can be made larger in the adjacent control terminals 45.

[0100] The first modification (the first side surface) of the first embodiment: FIG. 23 shows a semiconductor device according to the first modification of the first embodiment. FIG. 23 is an enlarged cross-sectional view of a main part showing the semiconductor device A11 of this modification, and is a cross-sectional view similar to FIG. 16. In the drawings of FIGS. 23 to 29, elements that are the same as or similar to those of the semiconductor device A1 in the above embodiment are denoted by the same reference numerals as in the above embodiment, and the description thereof is omitted as appropriate. Also, the configurations of the respective parts in each of the modifications and each of the embodiments of FIGS. 23 to 29 can be appropriately combined with each other within a range that does not cause a technical contradiction.

[0101] In the semiconductor device A11 of this modified example, the configuration of the first recess 810 is different from that of the semiconductor device A1 in the above-described embodiment. In the semiconductor device A11, the first recess 810 has a recess edge 813 and a cylindrical inner surface 814. The cylindrical inner surface 814 is cylindrical and extends from the resin main surface 81 toward the z2 side in the z direction. The recess edge 813 is located at the lower end (the end on the z2 side in the z direction) of the cylindrical inner surface 814. The recess edge 813 is in contact with the first surface 454a. In this modified example, the recess edge 813 is in contact with the intermediate position in the radial direction of the first surface 454a. A part of the first surface 454a closer to the outer side in the radial direction is covered with the sealing resin 8, and the remaining part closer to the inner side in the radial direction is exposed from the sealing resin 8. The outer peripheral edge of the first flange portion 454 surrounds the first recess 810 in a plan view. Thereby, the diameter (the maximum value of the inner diameter dimension) of the first recess 810 is smaller than the outer diameter dimension of the first flange portion 454. In the example shown in FIG. 23, the cylindrical inner surface 814 is cylindrical, but a taper may be provided on the cylindrical inner surface 814. When a taper is provided on the cylindrical inner surface 814, the cylindrical inner surface 814 has a conical shape that slopes so that the inner diameter dimension becomes smaller as it goes toward the z2 side in the z direction.

[0102] In the semiconductor device A11 of this modification example, the holder 451 that constitutes each control terminal 45 has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the end on the z1 side in the z direction in the holder 451. The first surface 454a is at a position different from the resin main surface 81 in the z direction. The first outer surface 453a extends in the z direction and is in contact with the encapsulating resin 8. The metal pin 452 that constitutes each control terminal 45 protrudes to the z1 side in the z direction from the resin main surface 81. According to such a configuration, the plurality of control terminals 45 are arranged in a region surrounded by the resin main surface 81 (encapsulating resin 8) in a plan view. Such a semiconductor device A11 can achieve miniaturization in a plan view. Also, the first surface 454a is at a position different from the resin main surface 81 in the z direction. According to such a configuration, in adjacent control terminals 45, the creepage distance along the surface of the encapsulating resin 8 (such as the resin main surface 81) can be increased. Therefore, the semiconductor device A11 is suitable for increasing the withstand voltage of adjacent control terminals 45 while achieving miniaturization in a plan view. In addition, within the range of the same configuration as the semiconductor device A1 of the above embodiment, the same operational effects as the above embodiment are achieved.

[0103] Second Modification Example (First Side) of the First Embodiment: FIG. 24 shows a semiconductor device according to the second modification example of the first embodiment. FIG. 24 is an enlarged cross-sectional view of a main part showing the semiconductor device A12 of this modification example and is the same cross-sectional view as FIG. 16. In the semiconductor device A12 of this modification example, the configuration of the first recess 810 is different from that of the semiconductor device A1 of the above embodiment.

[0104] The first recess 810 has a recess edge 813, a cylindrical inner surface 814, and a tapered inner surface 815. The cylindrical inner surface 814 is cylindrical and extends from the resin main surface 81 toward the z2 side in the z direction. The tapered inner surface 815 is connected to the lower end (the end on the z2 side in the z direction) of the cylindrical inner surface 814. The recess edge 813 is located at the lower end (the end on the z2 side in the z direction) of the tapered inner surface 815. The tapered inner surface 815 is inclined such that the inner diameter dimension increases as it goes toward the z1 side in the z direction. The recess edge 813 is in contact with the first surface 454a. In this modified example, the recess edge 813 is in contact with an intermediate position in the radial direction of the first surface 454a. A part of the first surface 454a closer to the outer side in the radial direction is covered with the sealing resin 8, and the remaining part closer to the inner side in the radial direction is exposed from the sealing resin 8. The outer peripheral edge of the first flange portion 454 surrounds the first recess 810 in plan view.

[0105] In the semiconductor device A12 of this modified example, the holder 451 constituting each control terminal 45 has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the end on the z1 side in the z direction in the holder 451. The first surface 454a is at a position different from that of the resin main surface 81 in the z direction. The first outer surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pin 452 constituting each control terminal 45 protrudes toward the z1 side in the z direction from the resin main surface 81. According to such a configuration, the plurality of control terminals 45 are arranged in a region surrounded by the resin main surface 81 (sealing resin 8) in plan view. Such a semiconductor device A12 can be miniaturized in plan view. Further, the first surface 454a is at a position different from that of the resin main surface 81 in the z direction. According to such a configuration, the creepage distance along the surface of the sealing resin 8 (such as the resin main surface 81) can be increased between adjacent control terminals 45. Therefore, the semiconductor device A12 is suitable for increasing the withstand voltage of adjacent control terminals 45 while achieving miniaturization in plan view.

[0106] In the first recess 810, the recess edge 813 located on the z2 side in the z direction is in contact with the first surface 454a of the first flange portion 454. Further, the first recess 810 has a tapered inner surface 815 connected to the recess edge 813, and the inner diameter dimension of the tapered inner surface 815 increases as it goes toward the z1 side in the z direction. According to such a configuration, when the metal pin 452 is press-fitted into the holder 451, the metal pin 452 that has entered the first recess 810 can be guided by the tapered inner surface 815 and directed toward the holder 451 (cylindrical portion 453). Therefore, the workability when the metal pin 452 is press-fitted into the holder 451 is improved. In addition, within the range of the same configuration as the semiconductor device A1 of the above embodiment, the same operational effects as those of the above embodiment are achieved.

[0107] Third Modification Example of the First Embodiment (First Side): FIG. 25 shows a semiconductor device according to the third modification example of the first embodiment. FIG. 25 is an enlarged cross-sectional view of a main part showing the semiconductor device A13 of this modification example, and is the same cross-sectional view as FIG. 16. In the semiconductor device A13 of this modification example, the configuration of the first recess 810 is different from that of the semiconductor device A1 of the above embodiment.

[0108] The first recess 810 has a recess edge 813, a cylindrical inner surface 814, and a tapered inner surface 815. In this modification example, the longitudinal cross-sectional shapes of the cylindrical inner surface 814 and the tapered inner surface 815 are the same as those of the semiconductor device A12 shown in FIG. 24. On the other hand, in this modification example, the recess edge 813 is in contact with the radially inner end of the first surface 454a. As a result, all (or substantially all) of the first surface 454a is covered with the sealing resin 8. The outer peripheral edge of the first flange portion 454 surrounds the first recess 810 in a plan view.

[0109] In the semiconductor device A13 of this modified example, the holder 451 that constitutes each control terminal 45 has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the end on the z1 side in the z direction in the holder 451. The first surface 454a is at a position different from the resin main surface 81 in the z direction. The first outer surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pin 452 that constitutes each control terminal 45 protrudes to the z1 side in the z direction from the resin main surface 81. According to such a configuration, the plurality of control terminals 45 are arranged in a region surrounded by the resin main surface 81 (sealing resin 8) in a plan view. Such a semiconductor device A13 can achieve miniaturization in a plan view. Also, the first surface 454a is at a position different from the resin main surface 81 in the z direction. According to such a configuration, in adjacent control terminals 45, the creepage distance along the surface of the sealing resin 8 (such as the resin main surface 81, etc.) can be increased. Therefore, the semiconductor device A13 is suitable for increasing the withstand voltage of adjacent control terminals 45 while achieving miniaturization in a plan view.

[0110] The recess edge 813 located on the z2 side in the z direction in the first recess 810 is in contact with the first surface 454a of the first flange portion 454. The first recess 810 has a tapered inner surface 815 connected to the recess edge 813, and the inner diameter dimension of the tapered inner surface 815 is larger as it goes toward the z1 side in the z direction. According to such a configuration, when the metal pin 452 is press-fitted into the holder 451, the metal pin 452 that has entered the first recess 810 can be directed toward the holder 451 (cylindrical portion 453) while being guided by the tapered inner surface 815. Also, in this modified example, the recess edge 813 is in contact with the radially inner end of the first surface 454a. Thereby, when the metal pin 452 is press-fitted into the holder 451, the metal pin 452 that has entered the first recess 810 can be surely directed toward the holder 451 (cylindrical portion 453). Therefore, the workability when press-fitting the metal pin 452 into the holder 451 is further improved. In addition, within the range of the same configuration as the semiconductor device A1 of the above embodiment, the same operational effects as the above embodiment are achieved.

[0111] The Fourth Modified Example (First Side) of the First Embodiment: FIG. 26 shows a semiconductor device according to a fourth modification of the first embodiment. FIG. 26 is an enlarged cross-sectional view of a main part showing the semiconductor device A14 of this modification, and is a cross-sectional view similar to FIG. 16. In the semiconductor device A14 of this modification, the configuration of the first recess 810 is different from that of the semiconductor device A1 of the above embodiment.

[0112] The first recess 810 has a recess inner surface 811 and a recess bottom surface 812. In the example shown in FIG. 26, the recess inner surface 811 has a conical shape that slopes so that the inner diameter dimension becomes smaller as it goes toward the z2 side in the z direction. The recess bottom surface 812 is connected to the end of the recess inner surface 811 on the z2 side in the z direction, and is a plane facing the z1 side in the z direction. The recess bottom surface 812 surrounds the first surface 454a of the holder 451 (the first flange portion 454) in plan view. In this modification, the recess bottom surface 812 is located on the z2 side in the z direction with respect to the first surface 454a. Therefore, the first surface 454a and the recess bottom surface 812 are not flush and have different positions in the z direction. Also, in the example shown in FIG. 26, the outer peripheral edge of the first flange portion 454 is exposed from the sealing resin 8.

[0113] In the semiconductor device A14 of this modified example, the holder 451 that constitutes each control terminal 45 has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the end on the z1 side in the z direction in the holder 451. The first surface 454a is at a position different from the resin main surface 81 in the z direction. The first outer surface 453a extends in the z direction and is in contact with the encapsulation resin 8. The metal pin 452 that constitutes each control terminal 45 protrudes to the z1 side in the z direction from the resin main surface 81. According to such a configuration, the plurality of control terminals 45 are arranged in a region surrounded by the resin main surface 81 (encapsulation resin 8) in a plan view. Such a semiconductor device A14 can achieve miniaturization in a plan view. Further, the first surface 454a is at a position different from the resin main surface 81 in the z direction. According to such a configuration, in adjacent control terminals 45, the creepage distance along the surface of the encapsulation resin 8 (such as the resin main surface 81, etc.) can be increased. Therefore, the semiconductor device A14 is suitable for increasing the withstand voltage of adjacent control terminals 45 while achieving miniaturization in a plan view. In addition, within the range of the same configuration as the semiconductor device A1 of the above embodiment, the same operational effects as those of the above embodiment are achieved.

[0114] Fifth Modified Example (First Side Surface) of the First Embodiment: FIG. 27 shows a semiconductor device according to the fifth modified example of the first embodiment. FIG. 27 is an enlarged cross-sectional view of the main part showing the semiconductor device A15 of this modified example and is the same cross-sectional view as FIG. 16. The semiconductor device A15 of this modified example further includes a first resin filling portion 89.

[0115] In this modified example, the first resin filling portion 89 is filled in the first recess 810 so as to fill the first recess 810. The first resin filling portion 89 is made of, for example, an epoxy resin similar to the encapsulation resin 8, but may be a material different from the encapsulation resin 8. According to this modified example, it is possible to prevent the intrusion of foreign matter (including moisture) into the first recess 810 exposed from the encapsulation resin 8. The semiconductor device A15 with the above configuration is preferable in terms of durability and reliability. In addition, the semiconductor device A15 has the same operational effects as those of the semiconductor device A1 of the above embodiment.

[0116] Second Embodiment (First Aspect): FIGS. 28 and 29 show a semiconductor device according to the second embodiment of the present disclosure. FIG. 28 is a perspective view showing the semiconductor device A2 of the present embodiment. FIG. 29 is an enlarged cross-sectional view of a main part showing the semiconductor device A2 and is a cross-sectional view similar to FIG. 16. In the semiconductor device A2 of the present embodiment, the encapsulating resin 8 does not have the above-described first recess 810. On the other hand, the semiconductor device A2 has a plurality of first protrusions 852.

[0117] Each of the plurality of first protrusions 852 protrudes from the resin main surface 81 toward the z1 side in the z direction. The plurality of protrusions 851 are provided corresponding to each of the plurality of control terminals 45 and overlap the plurality of control terminals 45 in a plan view. Each metal pin 452 of the plurality of control terminals 45 protrudes from the first protrusion 852. The first protrusion 852 is cylindrical. The first protrusion 852 covers a part of the holder 451 at each control terminal 45. As shown in FIG. 29, all of the first outer surface 453a of the cylindrical portion 453 and the second surface 454b of the first flange portion 454 in the holder 451 are in contact with the encapsulating resin 8. Specifically, a part of the first outer surface 453a and all of the second surface 454b are in contact with the first protrusion 852. On the other hand, the first surface 454a of the first flange portion 454 is exposed from the encapsulating resin 8.

[0118] The first protrusion 852 has a protrusion top surface 852a. The protrusion top surface 852a surrounds the first surface 454a of the holder 451 (first flange portion 454) in a plan view. Further, the first surface 454a and the protrusion top surface 852a are flush. The protrusion top surface 852a and the flush first surface 454a are at positions different from the resin main surface 81 in the z direction. Specifically, the first surface 454a is located on the z1 side in the z direction with respect to the resin main surface 81.

[0119] Next, the operation of the present embodiment will be described.

[0120] In the semiconductor device A2 of this modification example, the holder 451 that constitutes each control terminal 45 has a first surface 454a and a first outer surface 453a. The first surface 454a is located at the end on the z1 side in the z direction in the holder 451. The first surface 454a is at a position different from the resin main surface 81 in the z direction. The first outer surface 453a extends in the z direction and is in contact with the sealing resin 8. The metal pin 452 that constitutes each control terminal 45 protrudes on the z1 side in the z direction from the resin main surface 81. According to such a configuration, the plurality of control terminals 45 are arranged in a region surrounded by the resin main surface 81 (sealing resin 8) in a plan view. Such a semiconductor device A2 can be miniaturized in a plan view. Further, the first surface 454a is at a position different from the resin main surface 81 in the z direction. According to such a configuration, in adjacent control terminals 45, the creepage distance along the surface of the sealing resin 8 (such as the resin main surface 81) can be increased. Therefore, the semiconductor device A2 is suitable for increasing the withstand voltage of adjacent control terminals 45 while achieving miniaturization in a plan view.

[0121] The sealing resin 8 has a first protruding portion 852. The first protruding portion 852 protrudes on the z1 side in the z direction from the resin main surface 81. The first flange portion 454 is located on the z1 side in the z direction with respect to the resin main surface 81. According to the configuration in which the sealing resin 8 has the above-described first protruding portion 852, the first surface 454a (first flange portion 454) can be appropriately arranged at a position different from the resin main surface 81 in the z direction.

[0122] The semiconductor device according to the first aspect of the present disclosure is not limited to the above-described embodiments. The specific configuration of each part of the semiconductor device can be freely designed and changed in various ways.

[0123] The first aspect of the present disclosure includes the embodiments described in the following Supplementary Notes 1 to 16.

[0124] Supplementary Note 1. At least one terminal including a cylindrical holder having conductivity and a metal pin inserted into the holder, A terminal support that supports the holder, Comprising a part of the holder and a sealing resin covering the terminal support. The sealing resin has a resin main surface facing one side in the thickness direction. The holder has a first surface located at one end on one side in the thickness direction and a first outer surface extending in the thickness direction. The first surface is at a position different from the resin main surface in the thickness direction. The first outer surface is in contact with the sealing resin. The metal pin protrudes to one side in the thickness direction from the resin main surface, a semiconductor device. Supplementary Note 2. The holder includes a cylindrical portion extending in the thickness direction and a first flange portion connected to one end of the cylindrical portion on one side in the thickness direction. The first flange portion has a first surface facing one side in the thickness direction and a second surface located on the other side in the thickness direction from the first surface and facing the other side in the thickness direction. The cylindrical portion has the first outer surface. All of the first outer surface and the second surface are in contact with the sealing resin, the semiconductor device according to Supplementary Note 1. Supplementary Note 3. The sealing resin has a first recess recessed from the resin main surface to the other side in the thickness direction. The first flange portion is located on the other side in the thickness direction with respect to the resin main surface. The first recess overlaps all of the cylindrical portion when viewed in the thickness direction, the semiconductor device according to Supplementary Note 2. Supplementary Note 4. At least a part of the first surface is exposed from the sealing resin, the semiconductor device according to Supplementary Note 3. Supplementary Note 5. All of the first surface is exposed from the sealing resin. The first recess has a recess inner surface connected to the resin main surface and a recess bottom surface connected to the end on the other side in the thickness direction of the recess inner surface and facing one side in the thickness direction. The recess bottom surface surrounds the first surface when viewed in the thickness direction, the semiconductor device according to Supplementary Note 4. Supplementary Note 6. The semiconductor device according to appended claim 3, wherein the first recess is located on the other side in the thickness direction and has a recess edge in contact with the first surface. Appended claim 7. The semiconductor device according to appended claim 6, wherein the first recess has a tapered inner surface connected to the recess edge. The semiconductor device according to appended claim 6, wherein the tapered inner surface is inclined such that the inner diameter dimension increases as it goes toward one side in the thickness direction. Appended claim 8. The semiconductor device according to appended claim 6, wherein an outer peripheral edge of the first flange portion surrounds the first recess when viewed in the thickness direction. Appended claim 9. The semiconductor device according to any one of appended claims 3 to 8, wherein a first dimension, which is a distance in the thickness direction between the resin main surface and the first surface, is smaller than a second dimension, which is a length in the thickness direction of the holder. Appended claim 10. The semiconductor device according to appended claim 9, wherein a ratio of the first dimension to the second dimension is 1 / 3 or more. Appended claim 11. The semiconductor device according to appended claim 3, further comprising a first resin filling portion filled in the first recess. Appended claim 12. The semiconductor device according to appended claim 2, wherein the sealing resin includes a first protruding portion protruding from the resin main surface toward one side in the thickness direction. The semiconductor device according to appended claim 2, wherein a part of the first outer surface and all of the second surface are in contact with the first protruding portion. Appended claim 13. The semiconductor device according to appended claim 12, wherein the first protruding portion has a protruding portion top surface facing one side in the thickness direction. The semiconductor device according to appended claim 12, wherein the protruding portion top surface surrounds the first surface when viewed in the thickness direction. The semiconductor device according to appended claim 12, wherein the first surface and the protruding portion top surface are flush. Appended claim 14. The semiconductor device further comprises a support conductor that supports the terminal support and at least one semiconductor element electrically connected to the at least one terminal. The semiconductor device according to appended claim 1 or 2, wherein the at least one semiconductor element is supported by the support conductor. Supplementary Note 15. The semiconductor device according to Supplementary Note 14, wherein the at least one terminal is a control terminal for controlling the at least one semiconductor element. Supplementary Note 16. The support conductor includes a first conductive portion and a second conductive portion separated in a first direction orthogonal to the thickness direction, The at least one semiconductor element includes a first switching element joined to the first conductive portion and a second switching element joined to the second conductive portion, The control terminal includes a first control terminal for controlling the first switching element and a second control terminal for controlling the second switching element, The semiconductor device according to Supplementary Note 15, wherein the terminal support includes a first support portion for supporting the first control terminal and a second support portion for supporting the second control terminal.

[0125] Next, with reference to FIGS. 30 to 44, a semiconductor device according to a first embodiment based on a second aspect of the present disclosure will be described. The semiconductor device B1 of the present embodiment includes a support substrate 11, a plurality of power terminals 13, a plurality of semiconductor elements 21, a thermistor 22, a first conduction member 31, a second conduction member 32, a plurality of wires, a plurality of control terminals 45, a control terminal support 48, and a sealing resin 50. The plurality of power terminals 13 includes a first power terminal 14, two second power terminals 15, and two third power terminals 16. The plurality of wires includes a plurality of first wires 41, a plurality of second wires 42, a plurality of third wires 43, and a fourth wire 44.

[0126] FIG. 30 is a perspective view showing the semiconductor device B1. FIG. 31 is a plan view showing the semiconductor device B1. FIG. 32 is a plan view showing the semiconductor device B1, with the encapsulating resin 50 shown by phantom lines. FIG. 33 is a plan view showing the semiconductor device B1, which is a view obtained by omitting the encapsulating resin 50 and the second conductive member 32 from the plan view of FIG. 32. FIG. 34 is a view obtained by omitting the first conductive member 31 from the plan view of FIG. 33. FIG. 35 is a bottom view showing the semiconductor device B1. FIG. 36 is a cross-sectional view taken along line XXXVI-XXXVI of FIG. 32. FIGS. 37 and 38 are partial enlarged cross-sectional views obtained by enlarging a part of FIG. 36. FIG. 39 is a cross-sectional view taken along line XXXIX-XXXIX of FIG. 32. FIG. 40 is a cross-sectional view taken along line XL-XL of FIG. 32. FIG. 41 is a cross-sectional view taken along line XLI-XLI of FIG. 32. FIG. 42 is a cross-sectional view taken along line XLII-XLII of FIG. 32. FIG. 43 is a cross-sectional view taken along line XLIII-XLIII of FIG. 32. FIG. 44 is a partial enlarged cross-sectional view obtained by enlarging a part of FIG. 40.

[0127] In the following description, reference is made to a thickness direction z, a first direction x, and a second direction y that are orthogonal to each other. The thickness direction z corresponds to the thickness direction of the semiconductor device B1. Also, "in plan view" means when viewed in the thickness direction z. The first direction x is orthogonal to the thickness direction z. The second direction y is orthogonal to both the thickness direction z and the first direction x.

[0128] The semiconductor device B1 converts a DC power supply voltage applied to the first power terminal 14 and the two second power terminals 15 into AC power by a plurality of semiconductor elements 21. The converted AC power is input from the two third power terminals 16 to a power supply target such as a motor.

[0129] As shown in FIGS. 34, 36 to 39, 41, and 42, the support substrate 11 supports a plurality of semiconductor elements 21 in the thickness direction z. The support substrate 11 is composed of, for example, a DBC (Direct Bonded Copper) substrate. As shown in FIGS. 33 to 43, the support substrate 11 includes an insulating layer 111, a support conductor 112, and a back metal layer 113. As shown in FIGS. 35 to 43, the support substrate 11 is covered with a sealing resin 50 except for a part of the back metal layer 113.

[0130] As shown in FIGS. 36 to 43, the insulating layer 111 includes a portion intervening between the support conductor 112 and the back metal layer 113 in the thickness direction z. The insulating layer 111 is made of a material having relatively high thermal conductivity. The insulating layer 111 is made of, for example, ceramics containing aluminum nitride (AlN). The insulating layer 111 may be composed of an insulating resin sheet in addition to ceramics.

[0131] As shown in FIGS. 33, 34, and 36 to 43, the support conductor 112 is located above (on the z1 side) the insulating layer 111 in the thickness direction z. The composition of the support conductor 112 contains copper (Cu). As shown in FIGS. 42 and 43, in plan view, the support conductor 112 is surrounded by the periphery of the insulating layer 111. As shown in FIGS. 36 to 43, the support conductor 112 has a main surface 1120. The main surface 1120 is a plane facing the z1 side in the thickness direction z. As shown in FIGS. 33, 34, and 36 to 43, the support conductor 112 includes a first conductive portion 1121 and a second conductive portion 1122. The first conductive portion 1121 and the second conductive portion 1122 are each rectangular in plan view. The first conductive portion 1121 and the second conductive portion 1122 are separated from each other in the first direction x. The first conductive portion 1121 is located on the x1 side of the first direction x with respect to the second conductive portion 1122. Each of the plurality of semiconductor elements 21 is joined to either the first conductive portion 1121 or the second conductive portion 1122.

[0132] As shown in FIGS. 36 to 43, the back metal layer 113 is located below (on the z2 side) the insulating layer 111 in the thickness direction z. As shown in FIG. 35, the back metal layer 113 is exposed from the encapsulating resin 50. A heat dissipating member (such as a heat sink) (not shown) can be attached to the lower surface (the surface facing the z2 side) of the back metal layer 113. The composition of the back metal layer 113 contains copper. The back metal layer 113 is rectangular in plan view. The back metal layer 113 is surrounded by the periphery of the insulating layer 111 in plan view.

[0133] As shown in FIGS. 34 and 36 to 39, each of the plurality of semiconductor elements 21 is mounted on either the first conductive portion 1121 or the second conductive portion 1122. Each semiconductor element 21 is, for example, a MOSFET (Metal - Oxide - Semiconductor Field - Effect Transistor). In addition, each semiconductor element 21 may be a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a diode. In the description of the semiconductor device B1, the semiconductor element 21 is an n - channel type and a MOSFET having a vertical structure is targeted. The semiconductor element 21 includes a compound semiconductor substrate. The composition of the compound semiconductor substrate contains silicon carbide (SiC) or silicon (Si).

[0134] As shown in FIGS. 34 and 36 to 39, in the semiconductor device B1, the plurality of semiconductor elements 21 include a plurality of first elements 21A and a plurality of second elements 21B. The structure of each of the plurality of second elements 21B is the same as the structure of each of the plurality of first elements 21A. The plurality of first elements 21A are mounted on the first conductive portion 1121. The plurality of first elements 21A are arranged along the second direction y. The plurality of second elements 21B are mounted on the second conductive portion 1122. The plurality of second elements 21B are arranged along the second direction y. Each of the plurality of first elements 21A corresponds to the first switching element in the present disclosure. Each of the plurality of second elements 21B corresponds to the second switching element in the present disclosure.

[0135] As shown in FIGS. 34, 37, and 38, the plurality of semiconductor elements 21 have a first electrode 211, a second electrode 212, a third electrode 213, and two fourth electrodes 214.

[0136] As shown in FIGS. 37 and 38, the first electrode 211 faces either the first conductive portion 1121 or the second conductive portion 1122. A current corresponding to the power before being converted by the semiconductor element 21 flows through the first electrode 211. That is, the first electrode 211 corresponds to the drain electrode of the semiconductor element 21.

[0137] As shown in FIGS. 34, 37, and 38, the second electrode 212 is located on the side opposite to the first electrode 211 in the thickness direction z. A current corresponding to the power after being converted by the semiconductor element 21 flows through the second electrode 212. That is, the second electrode 212 corresponds to the source electrode of the semiconductor element 21.

[0138] As shown in FIG. 34, the third electrode 213 is located on the same side as the second electrode 212 in the thickness direction z. A gate voltage for driving the semiconductor element 21 is applied to the third electrode 213. That is, the third electrode 213 corresponds to the gate electrode of the semiconductor element 21. As shown in FIG. 34, in plan view, the area of the third electrode 213 is smaller than the area of the second electrode 212.

[0139] As shown in FIGS. 34, 37, and 38, the two fourth electrodes 214 are each located on the same side as the second electrode 212 in the thickness direction z and adjacent to the third electrode 213 in the first direction x. In the illustrated example, the two fourth electrodes 214 are arranged on both sides of the third electrode 213 with the third electrode 213 interposed therebetween in the second direction y. The potential of each fourth electrode 214 is equal to the potential of the second electrode 212. The fourth electrode 214 corresponds to a source sense electrode. Different from the illustrated example, each semiconductor element 21 may include only one of the two fourth electrodes 214, or may not include any of the two fourth electrodes 214.

[0140] As shown in FIGS. 37 and 38, the conductive bonding layer 23 is interposed between either of the first conductive parts 1121 and 1122 and the first electrode 211 of any one of the plurality of semiconductor elements 21. The conductive bonding layer 23 is, for example, solder. Alternatively, the conductive bonding layer 23 may contain a sintered body of metal particles. The first electrodes 211 of the plurality of first elements 21A are conductively bonded to the first conductive part 1121 via the conductive bonding layer 23. Thereby, the first electrodes 211 of the plurality of first elements 21A are electrically connected to the first conductive part 1121. The first electrodes 211 of the plurality of second elements 21B are conductively bonded to the second conductive part 1122 via the conductive bonding layer 23. Thereby, the first electrodes 211 of the plurality of second elements 21B are electrically connected to the second conductive part 1122. Note that, unlike this embodiment, the plurality of first elements 21A and the plurality of second elements 21B may be mounted on a metal member different from a part such as a DBC substrate. In this case, the metal member corresponds to the first conductive part and the second conductive part in the present disclosure. This metal member may be supported by, for example, a DBC substrate or the like.

[0141] Each of the plurality of power terminals 13 is electrically connected to the plurality of semiconductor elements 21. A current corresponding to the power before being converted by the plurality of semiconductor elements 21 or a current corresponding to the power after being converted by the plurality of semiconductor elements 21 flows through the plurality of power terminals 13. The plurality of power terminals 13 includes a first power terminal 14, two second power terminals 15, and two third power terminals 16.

[0142] As shown in FIGS. 33 and 39, the first power terminal 14 is joined to the first conductive portion 1121. This joining is not limited in any way and may be by a conductive joining material (for example, solder) not shown, by laser welding, or by caulking. The first power terminal 14 is electrically connected to the first electrodes 211 of the plurality of first elements 21A via the first conductive portion 1121. The first power terminal 14 is a P terminal (positive electrode) to which a DC power supply voltage to be power-converted is applied. As shown in FIG. 33, the first power terminal 14 is located on the side opposite to the second conductive portion 1122 with the first conductive portion 1121 interposed therebetween in the first direction x. The first power terminal 14 extends from the first conductive portion 1121 toward the x1 side in the first direction x and protrudes from the encapsulating resin 50 toward the x1 side in the first direction x. As shown in FIG. 32, the first power terminal 14 includes a portion covered by the encapsulating resin 50 and a portion exposed from 40. In the first power terminal 14, the portion covered by the encapsulating resin 50 is joined to the first conductive portion 1121. Also, in the first power terminal 14, the portion exposed from the encapsulating resin 50 is used as the aforementioned P terminal of the semiconductor device B1.

[0143] A second conduction member 32 is joined to the two second power terminals 15. The two second power terminals 15 are electrically connected to the second electrodes 212 of the plurality of second elements 21B via the second conduction member 32. The two second power terminals 15 are N terminals (negative electrodes) to which a DC power supply voltage to be power-converted is applied. The two second power terminals 15 are separated from each other in the second direction y. A first power terminal 14 is positioned between the two second power terminals 15. As shown in FIG. 33, each of the two second power terminals 15 is positioned on the same side as the first power terminal 14 with respect to the first conductive portion 1121 and the second conductive portion 1122 in the first direction x. Each of the two second power terminals 15 is separated from the first conductive portion 1121 and the second conductive portion 1122. Each of the two second power terminals 15 extends in the first direction x and protrudes from the sealing resin 50 to the x1 side in the first direction x. As shown in FIG. 32, each of the two second power terminals 15 includes a portion covered with the sealing resin 50 and a portion exposed from the sealing resin 50. In each second power terminal 15, the second conduction member 32 is joined to the portion covered with the sealing resin 50. Also, in each second power terminal 15, the portion exposed from the sealing resin 50 is used as the aforementioned N terminal of the semiconductor device B1.

[0144] As shown in FIGS. 33 and 36, the two third power terminals 16 are each joined to the second conductive portion 1122. This joining is not limited in any way and may be by a conductive joining material (e.g., solder) not shown, by laser welding, or by caulking. Each of the two third power terminals 16 is electrically connected to the first electrodes 211 of the plurality of second elements 21B via the second conductive portion 1122. Also, each of the two third power terminals 16 is electrically connected to the second electrodes 212 of the plurality of first elements 21A via the second conductive portion 1122 and the first conductive member 31. AC power converted by the plurality of semiconductor elements 21 (the plurality of first elements 21A and the plurality of second elements 21B) is output from the two third power terminals 16. That is, each of the two third power terminals 16 is an output terminal of the AC power. The two third power terminals 16 are separated from each other in the second direction y. As shown in FIG. 33, each of the two third power terminals 16 is located on the opposite side of the first conductive portion 1121 with the second conductive portion 1122 interposed therebetween in the first direction x. Each of the two third power terminals 16 extends from the second conductive portion 1122 to the x2 side in the first direction x and protrudes from the sealing resin 50 to the x2 side in the first direction x. As shown in FIG. 32, each of the two third power terminals 16 includes a portion covered by the sealing resin 50 and a portion exposed from the sealing resin 50. In each third power terminal 16, the portion covered by the sealing resin 50 is joined to the second conductive portion 1122. Also, in each third power terminal 16, the portion exposed from the sealing resin 50 is used as the aforementioned output terminal of the semiconductor device B1.

[0145] In this embodiment, the semiconductor device B1 includes four first elements 21A and four second elements 21B. However, the number of the first elements 21A and the number of the second elements 21B are not limited to this configuration and can be appropriately changed according to the performance required for the semiconductor device B1. In the example shown in FIG. 34, four first elements 21A and four second elements 21B are arranged respectively. The number of the first elements 21A and the second elements 21B may be two or three respectively, or may be five or more respectively. The number of the first elements 21A and the second elements 21B may be equal or different. The number of the first elements 21A and the second elements 21B is determined by the current capacity handled by the semiconductor device B1.

[0146] The semiconductor device B1 is configured as, for example, a half-bridge type switching circuit. In this case, the plurality of first elements 21A constitute the upper arm circuit of the semiconductor device B1, and the plurality of second elements 21B constitute the lower arm circuit. In the upper arm circuit, the plurality of first elements 21A are connected in parallel with each other, and in the lower arm circuit, the plurality of second elements 21B are connected in parallel with each other. Each first element 21A and each second element 21B are connected in series to form a bridge layer.

[0147] The plurality of control terminals 45 are each pin-shaped terminals for controlling the driving of each first element 21A and each second element 21B. The plurality of control terminals 45 are each, for example, press-fit terminals. The plurality of control terminals 45 include a plurality of first control terminals 46A to 46C and a plurality of second control terminals 47A to 47D. The plurality of first control terminals 46A to 46C are used for controlling each first element 21A and the like. The plurality of second control terminals 47A to 47D are used for controlling each second element 21B and the like.

[0148] The plurality of first control terminals 46A to 46C are arranged at intervals in the second direction y. As shown in FIGS. 34, 39, and 40, etc., each of the first control terminals 46A to 46C is supported by the first conductive portion 1121 via a control terminal support 48 (the first support portion 48A described later). As shown in FIGS. 33 and 34, each of the first control terminals 46A to 46C is located between the plurality of first elements 21A, the first power terminal 14, and the two second power terminals 15 in the first direction x.

[0149] The first control terminal 46A is a terminal (gate terminal) for inputting a drive signal to the plurality of first elements 21A. A drive signal for driving the plurality of first elements 21A is input to the first control terminal 46A (for example, a gate voltage is applied).

[0150] The first control terminal 46B is a terminal (source sense terminal) for detecting a source signal of the plurality of first elements 21A. A voltage (voltage corresponding to the source current) applied to each second electrode 212 (source electrode) of the plurality of first elements 21A is detected from the first control terminal 46B.

[0151] The first control terminal 46C is a terminal (drain sense terminal) for detecting a drain voltage of the plurality of first elements 21A. A voltage (voltage corresponding to the drain current) applied to each first electrode 211 (drain electrode) of the plurality of first elements 21A is detected from the first control terminal 46C.

[0152] The plurality of second control terminals 47A to 47D are arranged at intervals in the second direction y. As shown in FIGS. 34, 39, and 43, etc., each of the second control terminals 47A to 47D is supported by the second conductive portion 1122 via a control terminal support 48 (the second support portion 48B described later). As shown in FIGS. 33 and 34, each of the second control terminals 47A to 47D is located between the plurality of second elements 21B and the two third power terminals 16 in the first direction x.

[0153] The second control terminal 47A is a terminal (gate terminal) for inputting drive signals to a plurality of second elements 21B. A drive signal for driving the plurality of second elements 21B is input to the second control terminal 47A (for example, a gate voltage is applied). The second control terminal 47B is a terminal (source sense terminal) for detecting source signals of the plurality of second elements 21B. A voltage (a voltage corresponding to the source current) applied to each second electrode 212 (source electrode) of the plurality of second elements 21B is detected from the second control terminal 47B. The second control terminal 47C and the second control terminal 47D are not electrically connected to any of the plurality of second elements 21B. The second control terminal 47C and the second control terminal 47D are terminals electrically connected to the thermistor 22.

[0154] The plurality of control terminals 45 (the plurality of first control terminals 46A to 46C and the plurality of second control terminals 47A to 47D) each include a holder 451 and a metal pin 452.

[0155] The holder 451 is made of a conductive material. The holder 451 is disposed on the main surface 1120 of the support conductor 112 (support substrate 11). In the present embodiment, as shown in FIG. 44, the holder 451 is joined to a control terminal support 48 (a first metal layer 482 described later) via a conductive bonding layer 459. As shown in FIG. 44, the holder 451 includes a cylindrical portion 453, a first flange portion 454, and a second flange portion 455.

[0156] The cylindrical portion 453 extends in the thickness direction z and is, for example, cylindrical.

[0157] The first flange portion 454 is connected to an end portion on the z1 side in the thickness direction z of the cylindrical portion 453. The first flange portion 454 has a first surface 454a. The first surface 454a is a surface facing the z1 side in the thickness direction z. The first surface 454a is located at the end on the z1 side in the thickness direction z of the holder 451. The first surface 454a forms an annular shape (a circular annular shape in the illustrated example) when viewed in the thickness direction z.

[0158] The second flange portion 455 is connected to the end portion on the z2 side in the thickness direction z of the cylindrical portion 453. In the present embodiment, the second flange portion 455 is joined to the control terminal support 48 (the first metal layer 482 described later) via the conductive bonding layer 459.

[0159] The metal pin 452 is inserted through a part of the first flange portion 454 of the holder 451 and the cylindrical portion 453. The entire holder 451 is exposed from the encapsulating resin 50.

[0160] The metal pin 452 is a rod-shaped member extending in the thickness direction z. The metal pin 452 is supported by the holder 451 by being press-fitted into the holder 451. The metal pin 452 is electrically connected to the control terminal support 48 (the first metal layer 482 described later) via the holder 451 and the conductive bonding layer 459. The metal pin 452 protrudes on the z1 side in the thickness direction z from the upper surface of the encapsulating resin 50 (the resin main surface 51 described later).

[0161] The control terminal support 48 supports a plurality of control terminals 45. The control terminal support 48 is interposed between the main surface 1120 of the first conductive portion 1121 and the main surface 1120 of the second conductive portion 1122 and the plurality of control terminals 45 in the thickness direction z.

[0162] The control terminal support 48 includes a first support portion 48A and a second support portion 48B. The first support portion 48A is disposed on the first conductive portion 1121 and supports a plurality of first control terminals 46A to 46C among the plurality of control terminals 45. As shown in FIG. 44, the first support portion 48A is joined to the first conductive portion 1121 via the bonding layer 49. The bonding layer 49 may be conductive or insulating, and for example, solder is used. The second support portion 48B is disposed on the second conductive portion 1122 and supports a plurality of second control terminals 47A to 47D among the plurality of control terminals 45. Similar to the first support portion 48A, the second support portion 48B is joined to the second conductive portion 1122 via a bonding layer (not shown).

[0163] The control terminal support 48 (each of the first support portion 48A and the second support portion 48B) is composed of, for example, a DBC (Direct Bonded Copper) substrate. The control terminal support 48 has an insulating layer 481, a first metal layer 482, and a second metal layer 483 laminated on each other.

[0164] The insulating layer 481 is made of, for example, ceramics. The insulating layer 481 is, for example, rectangular in plan view.

[0165] The first metal layer 482 is formed on the upper surface of the insulating layer 481 as shown in FIG. 44 etc. Each control terminal 45 stands on the first metal layer 482. The first metal layer 482 contains, for example, Cu (copper) or a Cu (copper) alloy. As shown in FIG. 34 etc., the first metal layer 482 includes a first portion 482A, a second portion 482B, a third portion 482C, a fourth portion 482D, and a fifth portion 482E. The first portion 482A, the second portion 482B, the third portion 482C, the fourth portion 482D, and the fifth portion 482E are separated from each other and insulated.

[0166] A plurality of first wires 41 are joined to the fourth portion 482D and conduct to the third electrode 213 (gate electrode) of each first element 21A (each second element 21B) via each first wire 41. The fourth portion 482D and the first portion 482A are connected by a plurality of third wires 43. Thereby, the first portion 482A conducts to the third electrode 213 (gate electrode) of each first element 21A (each second element 21B) via the third wire 43 and the first wire 41. As shown in FIG. 34, the first control terminal 46A is joined to the first portion 482A of the first support portion 48A, and the second control terminal 47A is joined to the first portion 482A of the second support portion 48B.

[0167] The second part 482B has a plurality of second wires 42 joined thereto, and through each second wire 42, it is electrically connected to the fourth electrode 214 (source sense electrode) of each first element 21A (each second element 21B). As shown in FIG. 34, a first control terminal 46B is joined to the second part 482B of the first support portion 48A, and a second control terminal 47B is joined to the second part 482B of the second support portion 48B.

[0168] A second control terminal 47C is joined to the third part 482C. As shown in FIG. 34, a second control terminal 47C is joined to the third part 482C of the second support portion 48B. A first control terminal 46C and a second control terminal 47D are joined to the fifth part 482E. A first control terminal 46C is joined to the fifth part 482E of the first support portion 48A. The fifth part 482E of the first support portion 48A has a fourth wire 44 joined thereto, and through the fourth wire 44, it is electrically connected to the first electrode 211 (drain electrode) of each first element 21A. A second control terminal 47D is joined to the fifth part 482E of the second support portion 48B.

[0169] The thermistor 22 is conductively joined across the third part 482C and the fifth part 482E of the second support portion 48B. The thermistor 22 is, for example, an NTC (Negative Temperature Coefficient) thermistor. The NTC thermistor has a characteristic that its resistance gradually decreases with an increase in temperature. The thermistor 22 is used as a temperature detection sensor for the semiconductor device B1.

[0170] Each of the plurality of first wires 41, the plurality of second wires 42, the plurality of third wires 43, and the fourth wire 44 is, for example, a bonding wire. The constituent material of each first wire 41, each second wire 42, each third wire 43, and the fourth wire 44 is not particularly limited and includes, for example, any one of Au (gold), Al (aluminum), or Cu (copper). In FIGS. 32, 36 to 40, and 43, the plurality of first wires 41, the plurality of second wires 42, the plurality of third wires 43, and the fourth wire 44 are omitted.

[0171] As shown in FIG. 44, the second metal layer 483 is formed on the lower surface of the insulating layer 481 (the surface facing the z2 side in the thickness direction z). The second metal layer 483 of the first support portion 48A is joined to the first conductive portion 1121 via the joining layer 49 as shown in FIG. 44. The second metal layer 483 of the second support portion 48B is joined to the second conductive portion 1122 via a joining layer (not shown) in the same manner as the second metal layer 483 of the first support portion 48A.

[0172] As shown in FIGS. 33 and 36, the first conduction member 31 is conductively joined to the second electrodes 212 of a plurality of first elements 21A and the second conductive portion 1122. Thereby, the second electrodes 212 of the plurality of first elements 21A are electrically connected to the second conductive portion 1122. The composition of the first conduction member 31 is not particularly limited and includes, for example, copper. The first conduction member 31 is a metal clip. As shown in FIGS. 33 and 36, the first conduction member 31 has a main body portion 311, a plurality of first joining portions 312, and a plurality of second joining portions 313.

[0173] The main body portion 311 forms the main part of the first conduction member 31. As shown in FIG. 33, the main body portion 311 extends in the second direction y. As shown in FIGS. 33 and 36, the main body portion 311 straddles between the first conductive portion 1121 and the second conductive portion 1122. As shown in FIG. 33, a plurality of through holes 310 are formed in the main body portion 311. Each of the plurality of through holes 310 penetrates the main body portion 311 in the thickness direction z. The plurality of through holes 310 overlap between the first conductive portion 1121 and the second conductive portion 1122 in a plan view. Thereby, when the encapsulating resin 50 is formed, the inflow of the encapsulating resin 50 below the main body portion 311 in the thickness direction z (the z2 side in the thickness direction z) is improved.

[0174] As shown in FIGS. 33 and 36, a plurality of first joints 312 are individually joined to the second electrodes 212 of the plurality of first elements 21A. Each of the plurality of first joints 312 faces one of the second electrodes 212 of the plurality of first elements 21A. In a plan view, each first joint 312 extends from the main body portion 311 toward the x1 side in the first direction x. In the illustrated example, the plurality of first joints 312 are bifurcated from the main body portion 311, but they may not be bifurcated. The proximal end (the end on the side connected to the main body portion 311) of each first joint 312 is bent downward in the thickness direction z (the z2 side in the thickness direction z). Therefore, the distal end (the end on the side opposite to the side connected to the main body portion 311) of each first joint 312 is located below the main body portion 311 in the thickness direction z (the z2 side in the thickness direction z).

[0175] As shown in FIGS. 33 and 36, a plurality of second joints 313 are joined to the second conductive portion 1122. Each of the plurality of second joints 313 faces the second conductive portion 1122. In a plan view, each second joint 313 extends from the main body portion 311 toward the x1 side in the first direction x. The proximal end (the end on the side connected to the main body portion 311) of each second joint 313 is bent downward in the thickness direction z (the z2 side in the thickness direction z). Therefore, the distal end (the end on the side opposite to the side connected to the main body portion 311) of each second joint 313 is located below the main body portion 311 in the thickness direction z (the z2 side in the thickness direction z).

[0176] As shown in FIG. 37, the semiconductor device B1 further includes a first conductive bonding layer 33. The first conductive bonding layer 33 is interposed between the second electrodes 212 of the plurality of first elements 21A and the plurality of first joints 312. The first conductive bonding layer 33 conductively bonds the second electrodes 212 of the plurality of first elements 21A and the plurality of first joints 312. The first conductive bonding layer 33 is, for example, solder. Alternatively, the first conductive bonding layer 33 may include a sintered body of metal particles.

[0177] As shown in FIG. 36, the semiconductor device B1 further includes a second conductive bonding layer 34. The second conductive bonding layer 34 is interposed between the second conductive portion 1122 and the second bonding portion 313. The second conductive bonding layer 34 conductively bonds the second conductive portion 1122 and the second bonding portion 313. The second conductive bonding layer 34 is, for example, solder. Alternatively, the second conductive bonding layer 34 may contain a sintered body of metal particles.

[0178] As shown in FIG. 32, the second conductive member 32 is conductively bonded to the second electrodes 212 of a plurality of second elements 21B and two second power terminals 15. Thereby, the second electrodes 212 of the plurality of second elements 21B are electrically connected to the two second power terminals 15. The composition of the second conductive member 32 is not particularly limited and includes, for example, copper. The second conductive member 32 is a metal clip. As shown in FIGS. 32, 36, and 39 to 42, the second conductive member 32 has a pair of main body portions 321, a plurality of third bonding portions 322, a pair of fourth bonding portions 324, a plurality of intermediate portions 326, a plurality of cross beam portions 327, and a pair of vertical portions 328.

[0179] As shown in FIG. 32, the pair of main body portions 321 are spaced apart from each other in the second direction y. The pair of main body portions 321 extend in the first direction x. As shown in FIGS. 36 and 40, the pair of main body portions 321 are arranged parallel to the upper surfaces of the first conductive portion 1121 and the second conductive portion 1122. The pair of main body portions 321 are located farther from the first conductive portion 1121 and the second conductive portion 1122 than the main body portion 311 of the first conductive member 31.

[0180] As shown in FIGS. 32, 41, and 42, the plurality of intermediate portions 326 are spaced apart from each other in the second direction y and are located between the pair of main body portions 321 in the second direction y. The plurality of intermediate portions 326 extend in the first direction x.

[0181] As shown in FIGS. 32 and 42, a plurality of third joints 322 are individually joined to the second electrodes 212 of the plurality of second elements 21B. Each of the plurality of third joints 322 faces one of the second electrodes 212 of the plurality of second elements 21B. In a plan view, the plurality of third joints 322 extend in the second direction y from the plurality of intermediate portions 326. The proximal end (the end connected to the intermediate portion 326) of each third joint 322 is bent downward in the thickness direction z (on the z2 side of the thickness direction z). Therefore, the distal end (the end opposite to the side connected to the intermediate portion 326) of each third joint 322 is located below the intermediate portion 326 in the thickness direction z (on the z2 side of the thickness direction z).

[0182] As shown in FIGS. 32 and 36, a pair of fourth joints 324 are individually joined to the two second power terminals 15. Each of the pair of fourth joints 324 faces a corresponding one of the two second power terminals 15.

[0183] As shown in FIG. 32, a plurality of cross beam portions 327 are arranged along the second direction y. In a plan view, the plurality of cross beam portions 327 include regions that individually overlap the plurality of first joints 312 of the first conductive member 31. As shown in FIGS. 32 and 41, both sides in the second direction y of the cross beam portion 327 located at the center in the second direction y among the plurality of cross beam portions 327 are connected to the plurality of intermediate portions 326. Both sides in the second direction y of the remaining two cross beam portions 327 among the plurality of cross beam portions 327 are connected to one of the pair of main body portions 321 and one of the plurality of intermediate portions 326.

[0184] As shown in FIGS. 32 and 41, a pair of vertical portions 328 are individually connected to the pair of main body portions 321. As shown in FIG. 41, each of the pair of vertical portions 328 extends downward in the thickness direction z (on the z2 side of the thickness direction z) from a corresponding one of the pair of main body portions 321. Each of the pair of vertical portions 328 is connected to the outer edge in the second direction y with respect to a corresponding one of the pair of main body portions 321. In the illustrated example, the lower ends (the edges on the z2 side of the thickness direction z) of the pair of vertical portions 328 overlap the first conductive portion 1121 when viewed along the second direction y.

[0185] As shown in FIG. 38, the semiconductor device B1 further includes a third conductive bonding layer 35. The third conductive bonding layer 35 is interposed between the second electrodes 212 of the plurality of second elements 21B and the plurality of third bonding portions 322. The third conductive bonding layer 35 electrically conducts the second electrodes 212 of the plurality of second elements 21B and the plurality of third bonding portions 322. The third conductive bonding layer 35 is, for example, solder. In addition, the third conductive bonding layer 35 may include a sintered body of metal particles.

[0186] As shown in FIG. 36, the semiconductor device B1 further includes a fourth conductive bonding layer 36. The fourth conductive bonding layer 36 is interposed between the two second power terminals 15 and a pair of fourth bonding portions 324. The fourth conductive bonding layer 36 electrically conducts the two second power terminals 15 and the pair of fourth bonding portions 324. The fourth conductive bonding layer 36 is, for example, solder. In addition, the fourth conductive bonding layer 36 may include a sintered body of metal particles.

[0187] As shown in FIGS. 30 to 43, the encapsulating resin 50 covers the plurality of semiconductor elements 21, the first conduction member 31, the second conduction member 32, the plurality of first wires 41, the plurality of second wires 42, and the plurality of third wires 43. Further, the encapsulating resin 50 covers a part of each of the support substrate 11, the plurality of power terminals 13, and the control terminal support 48. The encapsulating resin 50 has electrical insulation properties. The encapsulating resin 50 includes, for example, a black epoxy resin. The encapsulating resin 50 is formed, for example, by molding. As shown in FIGS. 30 to 32 and FIGS. 35 to 43, the encapsulating resin 50 has a resin front surface 51, a resin back surface 52, a plurality of resin side surfaces 531 to 534, a plurality of first recesses 511, and a pair of recesses 531a.

[0188] As shown in FIGS. 36 and 39 to 43, the resin main surface 51 faces in the same direction as the upper surfaces (main surfaces 1120) of the first conductive portion 1121 and the second conductive portion 1122 in the thickness direction z. From the resin main surface 51, the metal pins 452 of the plurality of control terminals 45 (the plurality of first control terminals 46A to 46C and the plurality of second control terminals 47A to 47D) protrude. As shown in FIGS. 36 and 39 to 43, the resin back surface 52 faces the side opposite to the resin main surface 51 in the thickness direction z. As shown in FIG. 35, the resin back surface 52 is in a frame shape surrounding the lower surface (the surface facing the z2 side in the thickness direction z) of the back surface metal layer 113 of the support substrate 3 in a plan view. The back surface metal layer 113 of the support substrate 11 is exposed from this resin back surface 52. The lower surface (the surface facing the z2 side in the thickness direction z) of the back surface metal layer 113 is flush with, for example, the resin back surface 52.

[0189] As shown in FIGS. 31, 32, 36, and 39, the resin side surface 531 and the resin side surface 532 are separated from each other in the first direction x. The resin side surface 531 and the resin side surface 532 face opposite sides to each other in the first direction x and extend in the second direction y. The resin side surface 531 and the resin side surface 532 are connected to the resin main surface 51. The resin side surface 531 faces the x1 side in the first direction x, and the resin side surface 532 faces the x2 side in the first direction x. From the resin side surface 531, the first power terminal 14 and the two second power terminals 15 protrude respectively. From the resin side surface 532, the two third power terminals 16 protrude respectively.

[0190] As shown in FIGS. 31, 32, and 40 to 43, the resin side surface 533 and the resin side surface 534 are separated from each other in the second direction y. The resin side surface 533 and the resin side surface 534 face opposite sides to each other in the second direction y and extend in the first direction x. The resin side surface 533 and the resin side surface 534 are connected to the resin main surface 51 and the resin back surface 52. The resin side surface 533 faces the y1 side in the second direction y, and the resin side surface 534 faces the y2 side in the second direction y.

[0191] As shown in FIGS. 30, 39, 40, 43, and 44, each of the plurality of first recesses 511 is recessed from the resin main surface 51 toward the z2 side in the thickness direction z. In the present embodiment, the plurality of first recesses 511 are individually provided corresponding to each of the plurality of control terminals 45. The plurality of control terminals 45 are individually arranged corresponding to each of the plurality of first recesses 511.

[0192] As shown in FIGS. 31, 39, 40, 43, and 44, in a plan view, the first recess 511 overlaps all of the holders 451 of the corresponding control terminal 45. In the present embodiment, as shown in FIG. 44, the first recess 511 has a first recess inner surface 512 and a chamfered portion 515. The first recess inner surface 512 extends in the thickness direction z and has a conical shape that is inclined so that the inner diameter dimension becomes smaller as it goes toward the z2 side in the thickness direction z.

[0193] As shown in FIG. 44, the first recess inner surface 512 has a first edge 513 and a second edge 514. The first edge 513 is located at the end on the z2 side in the thickness direction z of the first recess inner surface 512 and is in contact with the control terminal support 48 (the first metal layer 482). The second edge 514 is located at the end on the z1 side in the thickness direction z of the first recess inner surface 512. The second edge 514 surrounds the first edge 513 in a plan view.

[0194] The chamfered portion 515 is connected to the resin main surface 51 and is interposed between the resin main surface 51 and the first recess inner surface 512. The specific shape of the chamfered portion 515 is not particularly limited, and examples include an R-chamfered shape of a curved surface or a C-chamfered shape. In the illustrated example, the chamfered portion 515 has an R-chamfered shape.

[0195] Such a first recess 511 is, for example, a trace formed by molding the encapsulating resin 50 while pressing the control terminal support 48 with a pin or the like having a shape corresponding to the first recess 511. FIG. 45 shows one step of the manufacturing process of the semiconductor device B1 and is a cross-sectional view similar to FIG. 44. As shown in FIG. 45, for example, a cylindrical pin 911 is provided in the mold 91 for molding. The holder 451 is disposed in the inner space of the cylindrical pin 911, and a resin material with fluidity is injected into the cavity space 919 of the mold 91 while pressing the lower end of the cylindrical pin 911 (the end on the z2 side in the thickness direction z) against the control terminal support 48 (the first metal layer 482). As understood from FIGS. 44 and 45, the inner surface 512 of the first recess 511 of the first recess 511 has a draft corresponding to the outer peripheral surface of the cylindrical pin 911. Further, as shown in FIG. 45, in the mold 91, a rounded portion 915 is provided at the base portion of the cylindrical pin 911. The chamfered portion 515 of the first recess 511 has a shape corresponding to the rounded portion 915 of the mold 91. After the encapsulating resin 50 is formed by molding using the mold 91, all of the holder 451 disposed in the inner space of the cylindrical pin 911 is exposed from the encapsulating resin 50.

[0196] Depending on the arrangement of the holder 451 of the control terminal 45, during the mold forming process, the lower end of the cylindrical pin 911 shown in FIG. 45 may be pressed against the first metal layer 482 and the insulating layer 481. On the insulating layer 481, there is a step in the thickness direction z at the boundary between the portion where the first metal layer 482 is formed and the portion where the first metal layer 482 is not formed. Therefore, when the lower end of the cylindrical pin 911 is pressed against the first metal layer 482 and the insulating layer 481, a gap may be generated between the lower end of the cylindrical pin 911 and the control terminal support 48 (insulating layer 481). Considering such a case, for example, a resist layer is formed on the portion of the upper surface of the insulating layer 481 where the first metal layer 482 is not formed, and a method can be adopted to eliminate the above step between the formed portion and the non-formed portion of the first metal layer 482 on the insulating layer 481. Also, the lower end portion of the cylindrical pin 911 may be made of a cushioning material. In this case, when the cylindrical pin 911 is pressed against the control terminal support 48, the above step can be absorbed by the cushioning material, and a gap can be prevented from being generated between the lower end of the cylindrical pin 911 and the control terminal support 48 (insulating layer 481).

[0197] Note that the method of forming the first recess 511 is not limited to the method described above with reference to FIG. 45. For example, while pressing the control terminal support 48 with a columnar solid pin corresponding to the first recess 511, the sealing resin 50 may be formed by mold forming. In this case, the holder 451 is not arranged on the control terminal support 48 during the mold forming process. And after the mold forming, the holder 451 is arranged in the first recess 511 on the control terminal support 48.

[0198] In the illustrated example, the first surface 454a of the holder 451 (the first flange portion 454) is located on the z2 side in the thickness direction z with respect to the resin main surface 51. Thereby, the entire holder 451 is accommodated in the first recess 511.

[0199] As shown in FIG. 31, the pair of recesses 531a are recessed from the resin side surface 531 toward the x2 side in the first direction x. The pair of recesses 531a extend from the resin main surface 51 to the resin back surface 52 in the thickness direction z. The pair of recesses 531a are located on both sides of the first power terminal 14 in the second direction y.

[0200] Next, the operation of this embodiment will be described.

[0201] The holder 451 constituting each control terminal 45 is disposed on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pins 452 constituting each control terminal 45 protrude to the z1 side in the thickness direction z from the resin main surface 51. According to such a configuration, the plurality of control terminals 45 are disposed in a region surrounded by the resin main surface 51 (sealing resin 50) in a plan view. Such a semiconductor device B1 can be miniaturized in a plan view.

[0202] All of the holders 451 of each control terminal 45 are exposed from the sealing resin 50. According to such a configuration, it is possible to prevent the sealing resin 50 from flowing into the inside of the holder 451 into which the metal pin 452 is inserted. Therefore, in the semiconductor device B1, the conduction of the holder 451 and the metal pin 452 can be appropriately maintained, and the control terminal 45 including the holder 451 and the metal pin 452 can function appropriately.

[0203] The plurality of control terminals 45 are disposed in the first recesses 511 of the sealing resin 50. In this embodiment, the sealing resin 50 has a plurality of first recesses 511, and the plurality of control terminals 45 are individually disposed corresponding to the plurality of first recesses 511 respectively. The first recess 511 (first recess inner surface 512) has a first edge 513 in contact with the control terminal support 48 (first metal layer 482). According to such a configuration, in adjacent control terminals 45, the creepage distance along the surface of the sealing resin 50 (such as the resin main surface 51 and the first recess inner surface 512 of the first recess 511) can be increased. Therefore, the semiconductor device B1 is suitable for increasing the withstand voltage of adjacent control terminals 45 while achieving miniaturization in a plan view.

[0204] The first recess 511 overlaps all of the holders 451 at the corresponding control terminals 45 in a plan view. According to such a configuration, in a plan view, the visibility of the holder 451 surrounded by the first recess 511 is excellent. Thereby, the workability when press-fitting the metal pin 452 into the holder 451 is further improved.

[0205] Hereinafter, a modified example of the semiconductor device based on the second aspect of the present disclosure will be described. The configurations of the respective parts in each modified example can be combined with each other within a range where no technical contradiction occurs.

[0206] Figs. 46 to 48 show a semiconductor device according to a first modified example of the first embodiment of the second aspect. Fig. 46 is a plan view showing the semiconductor device B11 of this modified example. Fig. 47 is a cross-sectional view taken along line XLVII-XLVII of Fig. 46. Fig. 48 is a cross-sectional view taken along line XLVIII-XLVIII of Fig. 46. In the drawings after Fig. 46, elements that are the same as or similar to the semiconductor device B1 of the above embodiment are denoted by the same reference numerals as those in the above embodiment, and the description thereof will be omitted as appropriate.

[0207] In the semiconductor device B11 of this modification example, the configuration of the first recess 511 in the encapsulating resin 50 is different from that of the semiconductor device B1 of the above embodiment. As shown in FIGS. 46 to 48, in the semiconductor device B11, the encapsulating resin 50 has two first recesses 511. One of the two first recesses 511 corresponds to a plurality of control terminals 45 (first control terminals 46A to 46C), and the plurality of control terminals 45 (first control terminals 46A to 46C) are arranged in the one first recess 511. In a plan view, one first recess 511 overlaps all of the holders 451 in each of the plurality of control terminals 45 (first control terminals 46A to 46C). The other of the two first recesses 511 corresponds to a plurality of control terminals 45 (second control terminals 47A to 47D), and the plurality of control terminals 45 (second control terminals 47A to 47D) are arranged in the other first recess 511. In a plan view, the other first recess 511 overlaps all of the holders 451 in each of the plurality of control terminals 45 (second control terminals 47A to 47D).

[0208] In the semiconductor device B11 of this modification example, the holder 451 constituting each control terminal 45 is arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pin 452 constituting each control terminal 45 protrudes toward the z1 side in the thickness direction z from the resin main surface 51. According to such a configuration, the plurality of control terminals 45 are arranged in a region surrounded by the resin main surface 51 (encapsulating resin 50) in a plan view. Such a semiconductor device B11 can be downsized in a plan view.

[0209] All of the holders 451 of each control terminal 45 are exposed from the encapsulating resin 50. According to such a configuration, it is possible to prevent the encapsulating resin 50 from flowing into the inside of the holder 451 into which the metal pin 452 is inserted. Therefore, in the semiconductor device B11, the electrical continuity of the holder 451 and the metal pin 452 can be appropriately maintained, and the control terminal 45 including the holder 451 and the metal pin 452 can function appropriately.

[0210] The plurality of control terminals 45 are arranged in the first recess 511 of the encapsulating resin 50. In the semiconductor device B11, the encapsulating resin 50 has two first recesses 511. A plurality of control terminals 45 (first control terminals 46A to 46C) are arranged in one of the first recesses 511, and a plurality of control terminals 45 (second control terminals 47A to 47D) are arranged in the other first recess 511. According to the configuration in which the plurality of control terminals 45 are collectively arranged in one first recess 511 in this way, the encapsulating resin 50 can be formed relatively easily by mold molding.

[0211] FIG. 49 shows a semiconductor device according to a second modification of the first embodiment on the second side surface. FIG. 49 is a cross-sectional view showing the semiconductor device B12 of this modification, and is the same cross-sectional view as FIG. 40. The semiconductor device B12 of this modification further includes a first resin portion 55, and is different from the semiconductor device B1 of the above embodiment in that it includes the first resin portion 55.

[0212] The first resin portion 55 fills at least a part of the first recess 511 and contacts at least a part of the holder 451. In the semiconductor device B12, the first resin portion 55 is filled in each of the first recesses 511 so as to fill each of the first recesses 511. The first resin portion 55 covers the entire holder 451 arranged in the first recess 511. The constituent material of the first resin portion 55 is not particularly limited. The first resin portion 55 may be the same material as the encapsulating resin 50, or may be a material different from the encapsulating resin 50. In the semiconductor device B12, for example, the constituent material of the first resin portion 55 is different from the constituent material of the encapsulating resin 50. In the semiconductor device B12, for example, the elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the encapsulating resin 50. When the elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the encapsulating resin 50 in this way, the constituent material of the first resin portion 55 is not particularly limited, and examples thereof include silicone resin and silicone gel.

[0213] In the semiconductor device B12 of this modified example, the holder 451 that constitutes each control terminal 45 is disposed on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pin 452 that constitutes each control terminal 45 protrudes toward the z1 side in the thickness direction z from the resin main surface 51. According to such a configuration, the plurality of control terminals 45 are disposed in a region surrounded by the resin main surface 51 (sealing resin 50) in a plan view. Such a semiconductor device B12 can be miniaturized in a plan view.

[0214] All of the holders 451 of each control terminal 45 are exposed from the sealing resin 50. According to such a configuration, it is possible to prevent the sealing resin 50 from flowing into the inside of the holder 451 into which the metal pin 452 is inserted. Therefore, in the semiconductor device B12, the conductivity of the holder 451 and the metal pin 452 can be appropriately maintained, and the control terminal 45 including the holder 451 and the metal pin 452 can function appropriately.

[0215] In the semiconductor device B12, each first recess 511 is filled with a first resin portion 55. The first resin portion 55 covers the holder 451 disposed in each first recess 511. The elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the sealing resin 50. According to such a configuration, it is possible to reduce the stress around the holder 451 covered by the first resin portion 55. Further, in the semiconductor device B12, by including the first resin portion 55, it is possible to prevent foreign matter (including moisture) from entering the first recess 511 exposed from the sealing resin 50. The semiconductor device B12 having the above configuration is preferable in terms of improving durability and reliability. In addition, the semiconductor device B12 exhibits the same operational effects as those of the semiconductor device B1 of the above embodiment within the range of the same configuration as that of the semiconductor device B1 of the above embodiment.

[0216] FIG. 50 shows a semiconductor device according to a third modification of the second side first embodiment. FIG. 50 is a cross-sectional view showing the semiconductor device B13 of this modification, and is the same cross-sectional view as FIG. 47. The semiconductor device B13 of this modification further includes a first resin portion 55, and is different from the semiconductor device B11 of the above modification in that it includes the first resin portion 55.

[0217] The first resin portion 55 fills at least a part of the first recess 511 and contacts at least a part of the holder 451. In the semiconductor device B13, the first resin portion 55 fills a part of the first recess 511. The first resin portion 55 covers a part of each of the plurality of holders 451 arranged in the first recess 511. The constituent material of the first resin portion 55 is not particularly limited. The first resin portion 55 may be made of the same material as the encapsulation resin 50, or may be made of a material different from the encapsulation resin 50. In the semiconductor device B13, for example, the constituent material of the first resin portion 55 is different from the constituent material of the encapsulation resin 50. In the semiconductor device B13, for example, the elastic modulus of the first resin portion 55 is greater than the elastic modulus of the encapsulation resin 50. When the elastic modulus of the first resin portion 55 is greater than the elastic modulus of the encapsulation resin 50 in this way, the constituent material of the first resin portion 55 is not particularly limited, and examples thereof include an epoxy potting material.

[0218] In the semiconductor device B13 of this modification, the holder 451 constituting each control terminal 45 is arranged on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pin 452 constituting each control terminal 45 protrudes to the z1 side in the thickness direction z from the resin main surface 51. According to such a configuration, the plurality of control terminals 45 are arranged in a region surrounded by the resin main surface 51 (encapsulation resin 50) in a plan view. Such a semiconductor device B13 can be miniaturized in a plan view.

[0219] All holders 451 of the control terminals 45 are exposed from the encapsulating resin 50. With such a configuration, it is possible to prevent the encapsulating resin 50 from flowing into the inside of the holder 451 into which the metal pins 452 are inserted. Therefore, in the semiconductor device B13, the conduction between the holder 451 and the metal pins 452 can be appropriately maintained, and the control terminal 45 configured to include the holder 451 and the metal pins 452 can function properly.

[0220] In the semiconductor device B13, each first recess 511 is filled with a first resin portion 55. The first resin portion 55 covers at least a part of the holder 451 disposed in each first recess 511. The elastic modulus of the first resin portion 55 is greater than the elastic modulus of the encapsulating resin 50. With such a configuration, the seismic resistance performance of the holder 451 covered by the first resin portion 55 is improved. The semiconductor device B13 having the above configuration is preferable in terms of improving performance. In addition, the semiconductor device B13 exhibits the same operational effects as the semiconductor device B11 of the above-described modification.

[0221] FIG. 51 shows a semiconductor device according to a fourth modification of the first embodiment on the second side surface. FIG. 51 is a cross-sectional view showing the semiconductor device B14 of this modification, and is the same cross-sectional view as FIG. 40. The semiconductor device B14 of this modification further includes a first resin portion 55. Also, in the semiconductor device B14, the dimension in the thickness direction z of the encapsulating resin 50 is smaller than that of the semiconductor device B1 of the above embodiment. Accordingly, the dimension in the thickness direction z of each first recess 511 is also smaller than that of the semiconductor device B1 described above. And the holder 451 of each control terminal 45 protrudes on the z1 side in the thickness direction z from the resin main surface 51 of the encapsulating resin 50. The first surface 454a of the holder 451 (the first flange portion 454) is located on the z1 side in the thickness direction z with respect to the resin main surface 51. Thereby, a part of the holder 451 is accommodated in the first recess 511.

[0222] The first resin portion 55 fills at least a part of the first recess 511 and contacts at least a part of the holder 451. In the semiconductor device B14, the first resin portion 55 is filled in each of the first recesses 511 so as to fill each of the first recesses 511. The constituent material of the first resin portion 55 is not particularly limited. The first resin portion 55 may be made of the same material as the encapsulation resin 50, or may be made of a material different from the encapsulation resin 50. In the semiconductor device B14, for example, the constituent material of the first resin portion 55 is different from the constituent material of the encapsulation resin 50. In the semiconductor device B14, for example, the elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the encapsulation resin 50. When the elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the encapsulation resin 50 in this way, the constituent material of the first resin portion 55 is not particularly limited, and examples thereof include silicone resin and silicone gel.

[0223] In the semiconductor device B14, the first resin portion 55 has a portion located on the z1 side in the thickness direction z with respect to the resin main surface 51. The portion of the first resin portion 55 located on the z1 side in the thickness direction z with respect to the resin main surface 51 is, for example, a portion that bulges to the z1 side in the thickness direction z along the outer peripheral surface of the holder 451 (cylindrical portion 453) due to the surface tension of the first resin portion 55. In the illustrated example, the first surface 454a of the holder 451 (first flange portion 454) is exposed from the first resin portion 55.

[0224] In the semiconductor device B14 of this modification, the holder 451 constituting each control terminal 45 is disposed on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pins 452 constituting each control terminal 45 protrude to the z1 side in the thickness direction z with respect to the resin main surface 51. According to such a configuration, the plurality of control terminals 45 are disposed in a region surrounded by the resin main surface 51 (encapsulation resin 50) in a plan view. Such a semiconductor device B14 can be reduced in size in a plan view.

[0225] All holders 451 of the control terminals 45 are exposed from the encapsulating resin 50. According to such a configuration, it is possible to prevent the encapsulating resin 50 from flowing into the inside of the holder 451 into which the metal pins 452 are inserted. Therefore, in the semiconductor device B14, the conduction between the holder 451 and the metal pins 452 can be appropriately maintained, and the control terminal 45 configured to include the holder 451 and the metal pins 452 can function appropriately.

[0226] In the semiconductor device B14, each first recess 511 is filled with a first resin portion 55. The first resin portion 55 covers the holder 451 disposed in each first recess 511. The elastic modulus of the first resin portion 55 is smaller than the elastic modulus of the encapsulating resin 50. According to such a configuration, it is possible to reduce the stress around the holder 451 covered by the first resin portion 55. Further, in the semiconductor device B14, the first surface 454a of each holder 451 is exposed from the first resin portion 55. Thereby, after filling the first resin portion 55 into the first recess 511, the metal pins 452 can be press-fitted into the holder 451. The operation when press-fitting the metal pins 452 into the holder 451 is stabilized. In addition, the semiconductor device B14 has the same operational effects as those of the semiconductor device B1 in the above-described embodiment within the scope of the same configuration as that of the semiconductor device B1 in the above-described embodiment.

[0227] FIGS. 52 and 53 show a semiconductor device according to a fifth modification of the first embodiment of the second side surface. FIG. 52 is a plan view showing the semiconductor device B15 of this modification. FIG. 53 is a cross-sectional view taken along line LIII-LIII of FIG. 52. In the semiconductor device B15 of this modification, the encapsulating resin 50 has a plurality of second recesses 517. The point that the encapsulating resin 50 has the second recesses 517 is different from the semiconductor device B1 of the above-described embodiment.

[0228] The second recess 517 is recessed from the resin main surface 51 toward the z2 side in the thickness direction z. In the semiconductor device B15, the encapsulating resin 50 has a plurality of second recesses 517. Each of the plurality of second recesses 517 is provided corresponding to one of the plurality of first recesses 511. As shown in FIG. 52, the second recess 517 surrounds the corresponding first recess 511 in plan view. In the illustrated example, the second recess 517 is annular in plan view.

[0229] As shown in FIG. 53, the second recess 517 has a second recess bottom surface 518. The second recess bottom surface 518 is located at the end on the z2 side in the thickness direction z in the second recess 517. The second recess bottom surface 518 is spaced apart from the control terminal support 48 toward the z1 side in the thickness direction z.

[0230] In the semiconductor device B15 of this modification, the holder 451 constituting each control terminal 45 is disposed on the main surface 1120 of the support conductor 112 (support substrate 11). The metal pin 452 constituting each control terminal 45 protrudes toward the z1 side in the thickness direction z from the resin main surface 51. According to such a configuration, the plurality of control terminals 45 are disposed in a region surrounded by the resin main surface 51 (encapsulating resin 50) in plan view. Such a semiconductor device B15 can be miniaturized in plan view.

[0231] All of the holders 451 of each control terminal 45 are exposed from the encapsulating resin 50. According to such a configuration, it is possible to prevent the encapsulating resin 50 from flowing into the inside of the holder 451 into which the metal pin 452 is inserted. Therefore, in the semiconductor device B15, the electrical connection between the holder 451 and the metal pin 452 can be appropriately maintained, and the control terminal 45 including the holder 451 and the metal pin 452 can function appropriately.

[0232] In the semiconductor device B15, the encapsulating resin 50 has a second recess 517. The second recess 517 surrounds the first recess 511 in a plan view. The end on the z2 side in the thickness direction z (the bottom surface 518 of the second recess) of the second recess 517 is spaced apart from the control terminal support 48 on the z1 side in the thickness direction z. According to such a configuration, in the control terminal 45 surrounded by the second recess 517 in a plan view and the control terminal 45 adjacent thereto, the creepage distance along the surface of the encapsulating resin 50 (the resin main surface 51, the inner surface 512 of the first recess of the first recess 511, the second recess 517, etc.) can be made larger. The semiconductor device B15 can increase the withstand voltage of adjacent control terminals 45 while achieving miniaturization in a plan view. In addition, the semiconductor device B15 exhibits the same operational effects as those of the semiconductor device B1 in the above-described embodiment within the scope of the same configuration as that of the semiconductor device B1 in the above-described embodiment.

[0233] The semiconductor device according to the present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely designed and changed in various ways.

[0234] In the above-described embodiment and each modification, the case where all of the holders 451 are exposed from the encapsulating resin 50 has been described for each of the plurality of control terminals 45, but the present disclosure is not limited thereto. For example, in any one part of the plurality of control terminals 45, a configuration in which the holder 451 is covered with the encapsulating resin 50 may be adopted.

[0235] The second aspect of the present disclosure includes the configurations described in the following Supplementary Notes 1B to 17B. Supplementary Note 1B. A support substrate having a main surface facing one side in the thickness direction, At least one terminal including a holder disposed on the main surface and having conductivity, and a metal pin inserted into the holder, An encapsulating resin having a resin main surface facing one side in the thickness direction and covering at least a part of the support substrate, At least one of the at least one terminal has all of the holders exposed from the encapsulating resin, The semiconductor device, wherein the metal pin protrudes from one side in the thickness direction with respect to the resin main surface. Appended Note 2B. The semiconductor device further includes a terminal support body interposed between the support substrate and the at least one terminal in the thickness direction. The semiconductor device according to Appended Note 1B, wherein the holder is supported by the terminal support body. Appended Note 3B. The semiconductor device according to Appended Note 2B, wherein the encapsulating resin covers a part of the terminal support body. Appended Note 4B. The semiconductor device includes a plurality of the terminals. The encapsulating resin has at least one first recess recessed from the resin main surface to the other side in the thickness direction. The at least one first recess has a first edge in contact with the terminal support body. The semiconductor device according to Appended Note 3B, wherein the plurality of terminals are disposed in the at least one first recess. Appended Note 5B. The semiconductor device includes a plurality of the first recesses. The plurality of terminals are individually disposed corresponding to the plurality of the first recesses. The semiconductor device according to Appended Note 4B, wherein each of the plurality of the first recesses overlaps all of the holders in the corresponding terminal when viewed in the thickness direction. Appended Note 6B. The semiconductor device according to Appended Note 4B, wherein the first recess overlaps all of the holders in the plurality of the terminals when viewed in the thickness direction. Appended Note 7B. The semiconductor device further includes a first resin portion filling at least a part of the first recess. The semiconductor device according to Appended Note 5B or 6B, wherein the first resin portion contacts at least a part of the holder. Appended Note 8B. The constituent material of the first resin portion is different from the constituent material of the encapsulating resin. The semiconductor device according to Appended Note 7B, wherein the elastic modulus of the first resin portion is smaller than the elastic modulus of the encapsulating resin. Appended Note 9B. The constituent material of the first resin portion is different from the constituent material of the encapsulating resin. The semiconductor device according to appended note 7B, wherein the elastic modulus of the first resin portion is greater than the elastic modulus of the encapsulating resin. Appended note 10B. The encapsulating resin has a second recess that is recessed from the resin main surface toward the other side in the thickness direction, The semiconductor device according to any one of appended notes 4B to 9B, wherein the second recess surrounds the first recess when viewed in the thickness direction. Appended note 11B. The second recess has a second recess bottom surface that is located at the end on the other side in the thickness direction, The semiconductor device according to appended note 10B, wherein the second recess bottom surface is spaced apart from the terminal support on one side in the thickness direction. Appended note 12B. The at least one first recess includes an inner surface of the first recess, The inner surface of the first recess has a first edge located at the end on the other side in the thickness direction and a second edge located at the end on one side in the thickness direction, The semiconductor device according to any one of appended notes 4B to 11B (or any one of appended notes 4B to 6B), wherein the second edge surrounds the first edge when viewed in the thickness direction. Appended note 13B. The semiconductor device according to appended note 12B, wherein the at least one first recess has a chamfered portion interposed between the resin main surface and the inner surface of the first recess. Appended note 14B. The holder has a first surface located at the end on one side in the thickness direction, The semiconductor device according to any one of appended notes 1B to 13B (or any one of appended notes 1B to 6B), wherein the first surface is disposed on the other side in the thickness direction with respect to the resin main surface. Appended note 15B. The semiconductor device according to any one of appended notes 2B to 13B (or any one of appended notes 2B to 6B), further comprising at least one semiconductor element disposed on the main surface and electrically connected to the at least one terminal. Appended note 16B. The semiconductor device according to appended claim 15B, wherein the at least one terminal is a control terminal for controlling the at least one semiconductor element. Appended claim 17B. The support substrate includes a first conductive portion and a second conductive portion spaced apart in a first direction orthogonal to the thickness direction. The at least one semiconductor element includes a first switching element joined to the first conductive portion and a second switching element joined to the second conductive portion. The control terminal includes a first control terminal for controlling the first switching element and a second control terminal for controlling the second switching element. The semiconductor device according to appended claim 16B, wherein the terminal support includes a first support portion for supporting the first control terminal and a second support portion for supporting the second control terminal.

Explanation of reference numerals

[0236] (Explanation of reference numerals regarding the first side surface) A1, A11, A12, A13, A14, A15, A2: Semiconductor device 10A: First semiconductor element 10B: Second semiconductor element 101: Element main surface 102: Element back surface 11: First main surface electrode 12: Second main surface electrode 121: Gate finger 13: Third main surface electrode 15: Back surface electrode 17: Thermistor 19: Conductive bonding material 3: Support substrate 301: Support surface 302: Bottom surface 31: Insulating layer 32: Support conductor 32A: First conductive portion 32B: Second conductive portion 321: First bonding layer 33: Back surface metal layer 41: First terminal 42: Second terminal 43: Third terminal 44: Fourth terminal 45: Control terminal 451: Holder 452: Metal pin 453: Cylindrical portion 453a: First outer surface 453b: First inner surface 454: First flange part 454a: First surface 454b: Second surface 455: Second flange part 459: Conductive bonding material 46A, 46B, 46C, 46D, 46E: First control terminal 47A, 47B, 47C, 47D: Second control terminal 48: Control terminal support (terminal support) 48A: First support part 48B: Second support part 481: Insulating layer 482: First metal layer 482A: First part 482B: Second part 482C: Third part 482D: Fourth part 482E: Fifth part 482F: Sixth part 483: Second metal layer 49: Bonding material 5: First conductive member 51: Main part 51 514: First opening 52: First joint part 53: Second joint part 59: Conductive bonding material 6: Second conductive member 602: First step part 603: Second step part 61: Third joint part 611: Flat part 612: First inclined part 64: First path part 641: First strip part 643: First extending part 649: Concave part 65: Second path part 651: Second strip part 653: Second extending part 659: Concave part 66: Third path part 669: Concave part 67: Fourth path part 69: Conductive bonding material 71, 72, 73, 74: Wire 8: Encapsulating resin 81: Main resin surface 810: First concave part 811: Inner surface of concave part 812: Bottom surface of concave part 813: Edge of concave part 814: Cylindrical inner surface 815: Tapered inner surface 82: Back surface of resin 831, 832: Side surfaces of resin 832a: Concave part 833, 834: Side surfaces of resin 851: Protrusion 851a: Protrusion end face 851b: Concave part 851c: Inner wall surface 852: First protrusion 852a: Top surface of the protrusion 89: First resin filling part L1: First dimension L2: Second dimension (Explanation of the reference numerals for the second side surface) B1, B11, B12, B13, B14, B15: Semiconductor device 11: Support substrate 111: Insulating layer 112: Support conductor 1120: Main surface 1121: First conductive part 1122: Second conductive part 113: Back surface metal layer 13: Power terminal 14: First power terminal 15: Second power terminal 16: Third power terminal 21: Semiconductor element 21A: First element (first switching element) 21B: Second element (second switching element) 211: First electrode 212: Second electrode 213: Third electrode 214: Fourth electrode 22: Thermistor 23: Conductive bonding layer 31: First conduction member 310: Through hole 311: Body part 312: First joint part 313: Second joint part 32: Second conduction member 321: Body part 322: Third joint part 324: Fourth joint part 326: Intermediate part 327: Cross beam part 328: Vertical part 33: First conductive bonding layer 34: Second conductive bonding layer 35: Third conductive bonding layer 36: Fourth conductive bonding layer 41: First wire 42: Second wire 43: Third wire 44: Fourth wire 45: Control terminal (terminal) 451: Holder 452: Metal pin 453: Cylindrical part 454: First flange part 454a: First surface 455: Second flange part 459: Conductive bonding layer 46A, 46B, 46C: First control terminal 47A, 47B, 47C, 47D: Second control terminal 48: Control terminal support (terminal support) 48A: First support part 48B: Second support part 481: Insulating layer 482: First metal layer 482A: First part 482B: Second part 482C: Third part 482D: Fourth part 482E: Fifth part 483: Second metal layer 49: Bonding layer 50: Encapsulating resin 51: Main resin surface 511: First recess 512: Inner surface of the first recess 513: First edge 514: Second edge 515: Chamfered part 517: Second recess 518: Bottom surface of the second recess 52: Back resin surface 531, 532, 533, 534: Resin side surfaces 531a: Recess 55: First resin part 91: Mold 911: Cylindrical pin 915: Rounded corner part 919: Cavity space

Claims

1. A support substrate having a main surface facing one side in a thickness direction; at least one semiconductor element disposed on the major surface; at least one control terminal disposed on the main surface for controlling the at least one semiconductor element; a control terminal support body interposed between the support substrate and the at least one control terminal in the thickness direction and supporting the control terminal; a sealing resin having a resin main surface facing one side in the thickness direction and covering at least a portion of the support substrate; the control terminal protrudes beyond the resin main surface to one side in the thickness direction, the sealing resin has at least one first recess recessed from the resin main surface to the other side in the thickness direction, the at least one first recess has a first recess inner surface having a first edge in contact with the control terminal support; the control terminal is disposed in the at least one first recess, and all of the control terminal is exposed from the sealing resin.

2. the control terminal includes a conductive cylindrical holder and a metal pin inserted into the holder; the holder includes a cylindrical portion extending in the thickness direction, a first flange portion connected to one end of the cylindrical portion in the thickness direction, and a second flange portion connected to the other end of the cylindrical portion in the thickness direction, The semiconductor device according to claim 1 , wherein the holder is entirely exposed from the sealing resin.

3. The semiconductor device according to claim 2 , wherein the first recess overlaps the entire holder when viewed in the thickness direction.

4. A plurality of the control terminals and a plurality of the first recesses, the control terminals are individually arranged corresponding to the first recesses, The semiconductor device according to claim 2 , wherein each of the plurality of first recesses overlaps with all of the holders of the corresponding control terminals when viewed in the thickness direction.

5. 2 . The semiconductor device according to claim 1 , wherein the inner side surface of the first recess extends in the thickness direction and is inclined so that an inner diameter dimension becomes smaller toward the other side in the thickness direction.

6. the first recess inner side surface has the first edge located at an end on the other side in the thickness direction and a second edge located at an end on one side in the thickness direction, The semiconductor device according to claim 1 , wherein the second edge surrounds the first edge when viewed in the thickness direction.

7. The semiconductor device according to claim 1 , wherein the at least one first recess has a chamfered portion interposed between the resin main surface and an inner side surface of the first recess.

8. 2. The semiconductor device according to claim 1, wherein said control terminal is a pin-shaped terminal for controlling the driving of said semiconductor element.

9. A plurality of the control terminals and a plurality of the first recesses, The semiconductor device according to claim 1 , wherein the control terminals are individually arranged corresponding to the first recesses, respectively.

10. A plurality of the control terminals are provided, The semiconductor device according to claim 1 , wherein the control terminals are disposed in the at least one first recess.

11. The semiconductor device according to claim 1 , further comprising a first resin portion filled in the first recess.

12. A method for manufacturing a semiconductor device comprising: a support substrate having a main surface facing one side in a thickness direction; at least one semiconductor element disposed on the main surface; at least one control terminal disposed on the main surface for controlling the at least one semiconductor element; a control terminal support body interposed between the support substrate and the at least one control terminal in the thickness direction and supporting the control terminal; and a sealing resin having a resin main surface facing one side in the thickness direction and covering at least a part of the support substrate, wherein the control terminal protrudes toward one side in the thickness direction beyond the resin main surface, forming a sealing resin by molding to cover at least a portion of the support substrate and a portion of the control terminal support body; A method for manufacturing a semiconductor device, wherein the process of forming the sealing resin includes molding the control terminal support while pressing a die against the control terminal support while the control terminal is not positioned on the control terminal support, thereby forming the sealing resin having a first recess.

13. In the step of forming the sealing resin, the resin main surface and the first recessed portion that is recessed from the resin main surface toward the other side in the thickness direction and has a shape corresponding to the mold are formed, The first recess includes a first recess inner side surface extending in the thickness direction, The method for manufacturing a semiconductor device according to claim 12 , wherein the inner side surface of the first recess is inclined so that an inner diameter dimension thereof becomes smaller toward the other side in the thickness direction.

14. 14. The method for manufacturing a semiconductor device according to claim 13, wherein in the step of forming the sealing resin, molding is performed so that the first recess has a chamfered portion interposed between the resin main surface and an inner side surface of the first recess.

15. 13 . The method for manufacturing a semiconductor device according to claim 12 , wherein in the step of forming the sealing resin, molding is performed such that each of the plurality of first recesses overlaps a corresponding one of the control terminals when viewed in the thickness direction.

16. The method for manufacturing a semiconductor device according to claim 12 , wherein in the step of forming the sealing resin, the first recess is molded so as to overlap a plurality of the control terminals when viewed in the thickness direction.

17. 13. The method for manufacturing a semiconductor device according to claim 12, further comprising, before the step of forming the sealing resin, a step of forming a resist layer on the insulating layer of the control terminal support and on a portion of an upper surface of the insulating layer where the first metal layer is not formed.

18. The method for manufacturing a semiconductor device according to claim 12, wherein the lower end of the mold is made of a cushioning material.

19. 19. The method for manufacturing a semiconductor device according to claim 12, further comprising the step of arranging the control terminal in the first recess after the step of forming the sealing resin.

20. 20. The method for manufacturing a semiconductor device according to claim 19, wherein in the step of arranging the control terminal in the first recess, a plurality of the control terminals are individually arranged corresponding to a plurality of the first recesses, respectively.

21. 20. The method for manufacturing a semiconductor device according to claim 19, wherein in the step of arranging the control terminal in the first recess, a plurality of the control terminals are arranged in at least one of the first recesses.

22. 20. The method for manufacturing a semiconductor device according to claim 19, further comprising the step of filling the first recess with a first resin portion after the step of arranging the control terminal in the first recess.

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