Semiconductor device

Abstract

To provide a liquid crystal display device suitable for a thin film transistor using an oxide semiconductor.SOLUTION: In a liquid crystal display device having a thin film transistor including an oxide semiconductor layer, a film having a function of attenuating light intensity of transmitting visible light is used for an interlayer film which at least covers the oxide semiconductor layer. As the film having the function of attenuating light intensity of the transmitting visible light, a colored layer can be used and a chromatic translucent resin layer may be used. Alternatively, an interlayer film is formed to include a chromatic translucent resin layer and a light-shielding layer, and the light-shielding layer may be used as a film having a function of attenuating light intensity of transmitting visible light. One of a pixel electrode layer and a common electrode layer, formed on an upper part, has an opening pattern, and the other formed on a lower part is tabular.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a liquid crystal display device using an oxide semiconductor and a method for manufacturing the same.

Background Art

[0002] As represented by liquid crystal display devices, thin film transistors formed on a flat plate such as a glass substrate are made of amorphous silicon or polycrystalline silicon. Although thin film transistors using amorphous silicon have a low field effect mobility, they can respond to the enlargement of the area of the glass substrate. On the other hand, thin film transistors using polycrystalline silicon have a high field effect mobility, but require a crystallization process such as laser annealing and are not necessarily suitable for the enlargement of the area of the glass substrate. have such characteristics.

[0003] In contrast, a technique of manufacturing a thin film transistor using an oxide semiconductor and applying it to electronic devices and optical devices has attracted attention. For example, a technique of manufacturing a thin film transistor using zinc oxide or an In-Ga-Zn-O-based oxide semiconductor as an oxide semiconductor film and using it for a switching element of an image display device is disclosed in Patent Document 1 and Patent Document 2.

[0004] A thin film transistor provided with a channel formation region in an oxide semiconductor has a higher field effect mobility than a thin film transistor using amorphous silicon. The oxide semiconductor film can be formed at a temperature of 300°C or lower by a sputtering method or the like, and the manufacturing process is simpler than that of a thin film transistor using polycrystalline silicon.

[0005] Since the oxide semiconductor is a transparent semiconductor that transmits light having a wavelength in the visible light region, it can be used for pixels of a display device. It is said that high aperture ratio can be achieved by using it.

[0006] Using such an oxide semiconductor, thin film transistors are formed on a glass substrate, a plastic substrate, etc., and application to a display device is expected. It is expected to be applied to a display device.

Prior Art Documents

Patent Documents

[0007]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0008] Therefore, an object is to provide a liquid crystal display device suitable for a thin film transistor using an oxide semiconductor. For this purpose.

Means for Solving the Problems

[0009] In a liquid crystal display device having a thin film transistor including an oxide semiconductor layer, at least a layer interlayer film covering the oxide semiconductor layer uses a film having a function of attenuating the light intensity of transmitted visible light. The film having a function of attenuating the light intensity of transmitted visible light is a film having a lower light transmittance of visible light than the oxide semiconductor layer. As the film having a function of attenuating the light intensity of transmitted visible light, a colored layer can be used, and it is preferable to use a colored light-transmitting resin layer. Further, a layer interlayer film including a colored light-transmitting resin layer and a light-shielding layer may be used, and a light-shielding layer may be used as the film having a function of attenuating the light intensity of transmitted visible light. The film having a function of attenuating the light intensity of transmitted visible light is a film having a lower light transmittance of visible light than the oxide semiconductor layer. As the film having a function of attenuating the light intensity of transmitted visible light, a colored layer can be used, and it is preferable to use a colored light-transmitting resin layer. Also, a colored light-transmitting resin layer and a light-shielding layer may be used as the layer interlayer film, and a light-shielding layer may be used as the film having a function of attenuating the light intensity of transmitted visible light. Including a colored light-transmitting resin layer and a light-shielding layer as the layer interlayer film, and using a light-shielding layer as the film having a function of attenuating the light intensity of transmitted visible light may be used. It is also possible to use a light-shielding layer as the film having a function of attenuating the light intensity of transmitted visible light.

[0010] When a colored light-transmitting resin layer is used as an interlayer film provided on a thin-film transistor, the intensity of light incident on the semiconductor layer of the thin-film transistor can be reduced without reducing the aperture ratio of the pixel, and fluctuations in the electrical characteristics of the thin-film transistor due to the light sensitivity of the oxide semiconductor can be prevented and a stabilizing effect can be obtained. In addition, the colored light-transmitting resin layer can function as a color filter layer. When the color filter layer is provided on the counter substrate side, it is difficult to accurately align the pixel regions with the element substrate on which the thin-film transistor is formed, which may impair the image quality. However, since the interlayer film is formed directly on the element substrate side as a color filter layer, more precise control of the formation region can be achieved, and it is possible to cope with pixels having fine patterns. Further, since the interlayer film and the color filter layer are made of the same insulating layer, the process is simplified and a liquid crystal display device can be manufactured at a lower cost. There is a risk of impairing the image quality due to the difficulty of accurately aligning the pixel regions with the element substrate on which the thin-film transistor is formed. However, since the interlayer film is formed directly on the element substrate side as a color filter layer, more precise control of the formation region can be achieved, and it is possible to cope with pixels having fine patterns. Further, since the interlayer film and the color filter layer are made of the same insulating layer, the process is simplified and a liquid crystal display device can be manufactured at a lower cost. In addition, since the interlayer film and the color filter layer are made of the same insulating layer, the process is simplified and a liquid crystal display device can be manufactured at a lower cost. In addition, since the interlayer film and the color filter layer are made of the same insulating layer, the process is simplified and a liquid crystal display device can be manufactured at a lower cost. As a technique for realizing a wide viewing angle, a method is used in which an electric field substantially parallel to the substrate (i.e., in the horizontal direction) is generated to move liquid crystal molecules in a plane parallel to the substrate and control gradation.

[0011] As such a method, the electrode configuration used in the FFS (Fringe Field Switching) mode can be applied. As such a method, the electrode configuration used in the FFS (Fringe Field Switching) mode can be applied. In the horizontal electric field mode such as the FFS mode, a flat first electrode layer (for example, a pixel electrode layer in which a voltage is controlled for each pixel) is provided below the liquid crystal layer, and an opening pattern is formed so as to overlap above the electrode. A second electrode layer (for example, a common electrode layer to which a common voltage is supplied to all pixels) is arranged. By applying an electric field between the pixel electrode layer and the common electrode layer, the liquid crystal is controlled. Since a horizontal electric field is applied to the liquid crystal, the liquid crystal molecules can be controlled using this electric field. That is, the liquid

[0012] In the horizontal electric field mode such as the FFS mode, a flat first electrode layer (for example, a pixel electrode layer in which a voltage is controlled for each pixel) is provided below the liquid crystal layer, and an opening pattern is formed so as to overlap above the electrode. A second electrode layer (for example, a common electrode layer to which a common voltage is supplied to all pixels) is arranged. By applying an electric field between the pixel electrode layer and the common electrode layer, the liquid crystal is controlled. Since a horizontal electric field is applied to the liquid crystal, the liquid crystal molecules can be controlled using this electric field. That is, the liquid A second electrode layer (for example, a common electrode layer to which a common voltage is supplied to all pixels) is arranged. By applying an electric field between the pixel electrode layer and the common electrode layer, the liquid crystal is controlled. Since a horizontal electric field is applied to the liquid crystal, the liquid crystal molecules can be controlled using this electric field. That is, the liquid A second electrode layer (for example, a common electrode layer to which a common voltage is supplied to all pixels) is arranged. By applying an electric field between the pixel electrode layer and the common electrode layer, the liquid crystal is controlled. Since a horizontal electric field is applied to the liquid crystal, the liquid crystal molecules can be controlled using this electric field. That is, the liquid Since a horizontal electric field is applied to the liquid crystal, the liquid crystal molecules can be controlled using this electric field. That is, the liquid Since the crystal molecules can be controlled in a direction parallel to the substrate, the viewing angle becomes wider. Therefore, the viewing angle characteristics can be improved, and a liquid crystal display device with higher image quality can be provided.

[0013] A chromatic color is a color excluding achromatic colors such as black, gray, and white. The chromatic light-transmissive resin layer functions as a color filter, and thus is formed of a material that transmits only the colored chromatic light. As the chromatic color, red, green, blue, etc. can be used. Also, cyan, magenta, yellow, etc. may be used. Transmitting only the colored chromatic light means that the light transmitted through the chromatic light-transmissive resin layer has a peak at the wavelength of the chromatic light.

[0014] In order for the chromatic light-transmissive resin layer to function as a color filter layer, the optimal film thickness may be appropriately controlled in consideration of the relationship between the concentration of the coloring material to be included and the light transmittance. When laminating the interlayer film with a plurality of thin films, if at least one layer is a chromatic light-transmissive resin layer, it can function as a color filter.

[0015] When the film thickness varies depending on the chromatic color or when there are irregularities due to thin film transistors, an insulating layer that transmits light with wavelengths in the visible light region (so-called colorless and transparent) may be laminated to flatten the surface of the interlayer film. Enhancing the flatness of the interlayer film improves the coating properties of the pixel electrode layer and the common electrode layer formed thereon, and can make the gap (film thickness) of the liquid crystal layer uniform. Therefore, the visibility of the liquid crystal display device can be improved, and high image quality can be achieved.

[0016] When a light-shielding layer (black matrix) is used as the interlayer film provided on the thin film transistor, the Since the optical layer can block the incidence of light on the semiconductor layer of the thin film transistor, it has the effect of preventing and stabilizing fluctuations in the electrical characteristics of the thin film transistor due to the photosensitivity of the oxide semiconductor. In addition, since the light shielding layer can also prevent light leakage to adjacent pixels, it becomes possible to perform higher contrast and higher definition display. Therefore, high definition and high reliability of the liquid crystal display device can be achieved. Thus, the element layer, the pixel electrode layer, the common electrode layer, and the interlayer film (colored light-transmissive resin layer) are formed on the same substrate and sealed by the substrate facing through the liquid crystal layer. The pixel electrode layer and the common electrode layer are arranged to be laminated via an insulating film (or interlayer film). Either one of the pixel electrode layer and the common electrode layer is formed below (on the side farther from the liquid crystal layer) and is flat, and the other is formed above (on the side closer to the liquid crystal layer) and has various opening patterns, and has a shape including bent portions and branched comb-like shapes. In this specification, the electrode layer formed in the lower layer (closer to the element substrate) farther from the liquid crystal layer is referred to as the first electrode layer, and the first electrode layer is a flat plate-shaped electrode layer. On the other hand, the electrode layer formed in the upper layer (farther from the element substrate) closer to the liquid crystal layer is referred to as the second electrode layer, and the second electrode layer is an electrode layer having an opening pattern (slit). The pixel electrode layer and the common electrode layer are arranged so as to overlap the flat plate-shaped first electrode layer and the opening pattern (slit) of the second electrode layer in order to generate an electric field between the electrodes. In this specification, the opening patterns (slits) of the pixel electrode layer and the common electrode layer include not only patterns opened in a closed space but also patterns such as partially opened comb-like patterns.

[0017]

[0018] ​​​​​​​​​​​​​​​

[0019] In this specification, a substrate on which a thin film transistor, a pixel electrode layer, a common electrode layer, and an interlayer film are formed is referred to as an element substrate (first substrate), and a substrate facing the element substrate with a liquid crystal layer interposed therebetween is referred to as a counter substrate (second substrate).

[0020] The light shielding layer can be formed on both the counter substrate side and the element substrate side of the liquid crystal display device. It can enhance the contrast improvement and the stabilization effect of the thin film transistor. If the light shielding layer is formed in a region corresponding to the thin film transistor (at least a region overlapping with the semiconductor layer of the thin film transistor), fluctuations in the electrical characteristics of the thin film transistor due to light incident from the counter substrate can be prevented. When the light shielding layer is formed on the counter substrate side, it may be formed in a region corresponding to the thin film transistor (at least a region overlapping with the semiconductor layer of the thin film transistor) via the liquid crystal layer. When the light shielding layer is formed on the element substrate side, the light shielding layer may be formed directly on the thin film transistor (at least a region covering the semiconductor layer of the thin film transistor) or via an insulating layer.

[0021] When a light shielding layer is also provided on the counter substrate side, since the semiconductor layer of the thin film transistor may be able to block both the light from the element substrate and the light from the counter substrate by a light-shielding wiring layer, an electrode layer, etc., it is not always necessary to form the light shielding layer so as to cover the thin film transistor.

[0022] One form of the configuration of the invention disclosed in this specification is a thin film transistor having an oxide semiconductor layer overlapping with a gate electrode layer as a channel formation region, a flat first electrode layer, a second electrode layer having an opening pattern, and an interlayer provided between the thin film transistor and the second electrode layer ​​​​​​​​​​​It has a film, the interlayer film, a liquid crystal layer on the first electrode layer and the second electrode layer, and one of the first electrode layer and the second electrode layer is a pixel electrode layer electrically connected to the thin film transistor, and the other is a common electrode layer. The interlayer film is a colored light-transmissive resin layer with a lower light transmittance than the oxide semiconductor layer. The colored light-transmissive resin layer is provided so as to overlap with the pixel electrode layer and cover the oxide semiconductor layer.

[0023] Another form of the configuration of the invention disclosed in this specification is a thin film transistor having an oxide semiconductor layer overlapping with a gate electrode layer as a channel formation region, a flat first electrode layer, a second electrode layer having an opening pattern, an interlayer film provided between the thin film transistor and the second electrode layer, a liquid crystal layer on the interlayer film, the first electrode layer and the second electrode layer. One of the first electrode layer and the second electrode layer is a pixel electrode layer electrically connected to the thin film transistor, and the other is a common electrode layer. The interlayer film includes a colored light-transmissive resin layer with a lower light transmittance than the oxide semiconductor layer and a light-shielding layer. The light-shielding layer is provided so as to cover the oxide semiconductor layer, and the colored light-transmissive resin layer is provided so as to overlap with the pixel electrode layer. In this specification, when the liquid crystal display device is a transmissive liquid crystal display device (or a transflective liquid crystal display device) that performs display by transmitting light from a light source, it is necessary to transmit light at least in the pixel region. Therefore, the thin films such as the first substrate, the second substrate, the pixel electrode layer, the common electrode layer, other insulating films, and conductive films included in the element layer in the pixel region where light is transmitted are all made to be light-transmissive to light in the wavelength region of visible light.

[0024] In this specification, when the liquid crystal display device is a transmissive liquid crystal display device (or a transflective liquid crystal display device) that performs display by transmitting light from a light source, at least in the pixel region, it is necessary to transmit light. Therefore, the first substrate, the second substrate, the pixel electrode layer, the common electrode layer, other insulating films, and conductive films included in the element layer in the pixel region where light is transmitted are all made to be light-transmissive to light in the wavelength region of visible light. ​

[0025] Note that the ordinal numbers assigned as the first and second are for convenience only and do not indicate the process order or the stacking order. Also, the specific names used as matters for specifying the invention in this specification do not indicate anything.

[0026] Note that in this specification, the semiconductor device generally refers to a device that can function by utilizing semiconductor characteristics, and all electro-optical devices, semiconductor circuits, and electronic devices are semiconductor devices.

Advantages of the Invention

[0027] In a liquid crystal display device having a thin film transistor in which a channel is formed in an oxide semiconductor layer, by forming at least an interlayer film covering the oxide semiconductor layer with a material that attenuates the light intensity of transmitted visible light, the operating characteristics of the thin film transistor can be stabilized without impairing the aperture ratio.

[0028] In addition, it is possible to improve the viewing angle characteristics and provide a liquid crystal display device with higher image quality.

Brief Description of the Drawings

[0029]

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Embodiments for Carrying Out the Invention

[0030] The embodiments will be described in detail with reference to the drawings. However, it is not limited to the following description, and those skilled in the art can easily understand that the form and details can be variously changed without departing from the spirit and scope thereof. Therefore, it should not be construed as being limited to the description content of the embodiments shown below. In the configurations described below, the same parts or parts having the same functions are commonly used with the same reference numerals among different drawings, and the repeated description thereof is omitted. Among those skilled in the art, it is easily understood that the form and details can be variously changed without departing from the spirit and scope thereof. Therefore, it should not be construed as being limited to the description content of the embodiments shown below. In the configurations described below, the same parts or parts having the same functions are commonly used with the same reference numerals among different drawings, and the repeated description thereof is omitted. Among those skilled in the art, it is easily understood that the form and details can be variously changed without departing from the spirit and scope thereof. Therefore, it should not be construed as being limited to the description content of the embodiments shown below. In the configurations described below, the same parts or parts having the same functions are commonly used with the same reference numerals among different drawings, and the repeated description thereof is omitted. Among those skilled in the art, it is easily understood that the form and details can be variously changed without departing from the spirit and scope thereof. Therefore, it should not be construed as being limited to the description content of the embodiments shown below. In the configurations described below, the same parts or parts having the same functions are commonly used with the same reference numerals among different drawings, and the repeated description thereof is omitted. Among those skilled in the art, it is easily understood that the form and details can be variously changed without departing from the spirit and scope thereof. Therefore, it should not be construed as being limited to the description content of the embodiments shown below. In the configurations described below, the same parts or parts having the same functions are commonly used with the same reference numerals among different drawings, and the repeated description thereof is omitted.

[0031] (Embodiment 1) A liquid crystal display device will be described with reference to FIG. 1.

[0032] FIG. 1(A) is a plan view of the liquid crystal display device and shows the pixels for one pixel. FIG. 1(B) is a cross-sectional view taken along line X1-X2 of FIG. 1(A). FIG. 1(A) is a plan view of the liquid crystal display device and shows the pixels for one pixel. FIG. 1(B) is a cross-sectional view taken along line X1-X2 of FIG. 1(A).

[0033] In FIG. 1(A), a plurality of source wiring layers (including wiring layer 405a) are parallel to each other (in the figure They are arranged in a state of being spaced apart from each other and extending in the vertical direction. A plurality of gate wiring layers (including the gate electrode layer 401) extend in a direction substantially orthogonal to the source wiring layer (the horizontal direction in the figure), and are arranged so as to be spaced apart from each other. The common wiring layer (common electrode layer) is arranged at a position adjacent to each of the plurality of gate wiring layers, and extends in a direction substantially parallel to the gate wiring layer, that is, in a direction substantially orthogonal to the source wiring layer (the horizontal direction in the figure). The source wiring layer, the common wiring layer (common electrode layer), and the gate wiring layer surround a substantially rectangular space, and the pixel electrode layer and the common electrode layer of the liquid crystal display device are arranged in this space. The thin film transistor 420 for driving the pixel electrode layer is arranged at the upper left corner in the figure. A plurality of pixel electrode layers and thin film transistors are arranged in a matrix.

[0034] In the liquid crystal display device of FIG. 1, the second electrode layer 446 electrically connected to the thin film transistor 420 functions as a pixel electrode layer, and the first electrode layer 447 electrically connected to the common wiring layer functions as a common electrode layer. As shown in FIG. 1, the first electrode layer 447 also serves as a common electrode in the pixel, and adjacent pixels are electrically connected by the common electrode layer 409. Note that a capacitance is formed by the pixel electrode layer and the common electrode layer. The common electrode layer can also be operated in a floating state (electrically isolated state), but it may be set to a level near a fixed potential, preferably a common potential (an intermediate potential of the image signal sent as data), at which no flicker occurs. An electric field substantially parallel to the substrate (i.e., in the horizontal direction) is generated to cause the liquid crystal molecules to rotate within the plane parallel to the substrate.

[0035] ​​A method of moving the particles to control the gradation is used. As such a method, as shown in FIG. 1, the electrode configuration used in the FFS mode can be applied.

[0036] The in-plane switching (IPS) mode such as the FFS mode has a flat first electrode layer (e.g., a pixel electrode layer where the voltage is controlled for each pixel) below the liquid crystal layer, and further a second electrode layer having an opening pattern (e.g., a common electrode layer to which a common voltage is supplied to all pixels) below the opening pattern thereof. Thus, on the first substrate 200, a first electrode layer in which one is a pixel electrode layer and the other is a common electrode layer and a second electrode layer are formed, and the pixel electrode layer and the common electrode layer are arranged to be laminated via an insulating film (or an interlayer insulating layer). Either the pixel electrode layer or the common electrode layer is formed below and is flat, and the other is formed above and has various opening patterns and has a shape including bent portions and branched comb-like shapes. The first electrode layer 44 7 and the second electrode layer 446 are arranged in a non-overlapping manner with the same shape in order to generate an electric field between the electrodes.

[0037] In this specification, the electrode layer formed in the lower layer farther from the liquid crystal layer (closer to the device substrate) is referred to as the first electrode layer, and the first electrode layer is a flat electrode layer. On the other hand, the electrode layer formed in the upper layer closer to the liquid crystal layer (farther from the device substrate) is referred to as the second electrode layer, and the second electrode layer is an electrode layer having an opening pattern (slit). The pixel electrode layer and the common electrode layer are arranged such that the flat first electrode layer overlaps with the opening pattern (slit ) of the second electrode layer in order to generate an electric field between the electrodes. Note that in FIG. 2, only the pixel electrode layer and the common electrode layer are omitted.

[0038] ​​​​By applying an electric field between the pixel electrode layer and the common electrode layer, the liquid crystal is controlled. Since a horizontal electric field is applied to the liquid crystal, the liquid crystal molecules can be controlled using this electric field. That is, since the liquid crystal molecules aligned parallel to the substrate can be controlled in a direction parallel to the substrate, the viewing angle becomes wider. Since a horizontal electric field is applied to the liquid crystal, the liquid crystal molecules can be controlled using this electric field. That is, since the liquid crystal molecules aligned parallel to the substrate can be controlled in a direction parallel to the substrate, the viewing angle becomes wider. Since a horizontal electric field is applied to the liquid crystal, the liquid crystal molecules can be controlled using this electric field. That is, since the liquid crystal molecules aligned parallel to the substrate can be controlled in a direction parallel to the substrate, the viewing angle becomes wider.

[0039] Examples of the first electrode layer 447 and the second electrode layer 446 are shown in FIG. 8. As shown in FIGS. 8(A) to (D), the first electrode layers 447a to 447d and the second electrode layers 446a to 446d are arranged to overlap each other, and an insulating film is formed between the first electrode layers 447a to 447d and the second electrode layers 446a to 446d, and the first electrode layers 447a to 447d and the second electrode layers 446a to 446d are formed on different films, respectively. As shown in FIGS. 8(A) to (D), the second electrode layers 446a to 446d formed in various patterns are formed on the first electrode layers 447a to 447d. In FIG. 8(A), the second electrode layer 446a on the first electrode layer 447a has a bent U-shape. As shown in FIGS. 8(A) to (D), the second electrode layers 446a to 446d formed in various patterns are formed on the first electrode layers 447a to 447d. In FIG. 8(A), the second electrode layer 446a on the first electrode layer 447a has a bent U-shape. As shown in FIGS. 8(A) to (D), the second electrode layers 446a to 446d formed in various patterns are formed on the first electrode layers 447a to 447d. In FIG. 8(A), the second electrode layer 446a on the first electrode layer 447a has a bent U-shape. As shown in FIGS. 8(A) to (D), the second electrode layers 446a to 446d formed in various patterns are formed on the first electrode layers 447a to 447d. In FIG. 8(A), the second electrode layer 446a on the first electrode layer 447a has a bent U-shape.

[0040] As shown in the top views of FIGS. 8(A) to (D), the second electrode layers 446a to 446d formed in various patterns are formed on the first electrode layers 447a to 447d. In FIG. 8(A), the second electrode layer 446a on the first electrode layer 447a has a bent U-shape. As shown in FIGS. 8(A) to (D), the second electrode layers 446a to 446d formed in various patterns are formed on the first electrode layers 447a to 447d. In FIG. 8(A), the second electrode layer 446a on the first electrode layer 447a has a bent U-shape. As shown in FIGS. 8(A) to (D), the second electrode layers 446a to 446d formed in various patterns are formed on the first electrode layers 447a to 447d. In FIG. 8(A), the second electrode layer 446a on the first electrode layer 447a has a bent U-shape. As shown in FIGS. 8(A) to (D), the second electrode layers 446a to 446d formed in various patterns are formed on the first electrode layers 447a to 447d. In FIG. 8(B), the second electrode layer 446b on the first electrode layer 447b has a concentric circular shape. As shown in FIGS. 8(A) to (D), the second electrode layers 446a to 446d formed in various patterns are formed on the first electrode layers 447a to 447d. In FIG. 8(C), the second electrode layer 446c on the first electrode layer 447c has a comb shape and the electrodes are engaged with each other. As shown in FIGS. 8(A) to (D), the second electrode layers 446a to 446d formed in various patterns are formed on the first electrode layers 447a to 447d. In FIG. 8(D), the second electrode layer 446d on the first electrode layer 447d has a comb shape. As shown in FIGS. 8(A) to (D), the second electrode layers 446a to 446d formed in various patterns are formed on the first electrode layers 447a to 447d. In FIG. 8(D), the second electrode layer 446d on the first electrode layer 447d has a comb shape.

[0041] The thin film transistor 420 is an inverted staggered type thin film transistor. On the first substrate 441 which is a substrate having an insulating surface, a gate electrode layer 401, a gate insulating layer 402, a semiconductor layer 403, n layers 404a and 404b functioning as a source region or a drain region, and a source electrode On the first substrate 441 which is a substrate having an insulating surface, a gate electrode layer 401, a gate insulating layer 402, a semiconductor layer 403, n layers 404a and 404b functioning as a source region or a drain region, and a source electrode On the first substrate 441 which is a substrate having an insulating surface, a gate electrode layer 401, a gate insulating layer 402, a semiconductor layer 403, n layers 404a and 404b functioning as a source region or a drain region, and a source electrode + On the first substrate 441 which is a substrate having an insulating surface, a gate electrode layer 401, a gate insulating layer 402, a semiconductor layer 403, n layers 404a and 404b functioning as a source region or a drain region, and a source electrode It includes wiring layers 405a and 405b that function as a layer or a drain electrode layer. The first electrode layer 4 47 is formed on the first substrate 441 in the same layer as the gate electrode layer 401, and in the pixel it is a flat electrode layer.

[0042] An insulating film 407 that covers the thin film transistor 420 and is in contact with the semiconductor layer 403 is provided. An interlayer film 413 is provided on the insulating film 407, and a second electrode layer 446 having an opening pattern is formed on the interlayer film 413. Therefore, the first electrode layer 447 and the second electrode layer 446 are arranged so as to overlap with each other with the gate insulating layer 402, the insulating film 407, and the interlayer film 413 sandwiched therebetween.

[0043] In the liquid crystal display device of FIG. 1, a colored light-transmissive resin layer 417 is used as a film having a function of attenuating the light intensity of transmitted visible light in the interlayer film 413. The visible light transmittance of the colored light-transmissive resin layer 417 is lower than the visible light transmittance of the semiconductor layer 403 which is an oxide semiconductor layer.

[0044] When the colored light-transmissive resin layer 417 of the colored light-transmissive resin layer is used as the interlayer film 413 provided on the thin film transistor 420, the intensity of light incident on the semiconductor layer 403 of the thin film transistor 420 can be attenuated without reducing the aperture ratio of the pixel, and the effect of preventing and stabilizing the variation of the electrical characteristics of the thin film transistor 420 due to the light sensitivity of the oxide semiconductor can be obtained. Further, the colored light-transmissive resin layer 417 can function as a color filter layer. When the color filter layer is provided on the counter substrate side, it is difficult to accurately align the pixel regions with the element substrate on which the thin film transistor is formed, and there is a risk of degrading the image quality. However, when the interlayer film is used as the color filter layer Since it is formed directly on the element substrate side, more precise control of the formation region is possible, and it can also correspond to fine patterns. Also, since the interlayer film and the color filter layer are made of the same insulating layer, the process is simplified and a liquid crystal display device can be manufactured at a lower cost.

[0045] A chromatic color is a color excluding achromatic colors such as black, gray, and white, and the colored layer functions as a color filter, so it is formed of a material that transmits only the light of the colored chromatic color. As the chromatic color, red, green, blue, etc. can be used. Also, cyan, magenta, yellow ( yellow), etc. may be used. Transmitting only the light of the colored chromatic color means that the light transmitted through the colored layer has a peak at the wavelength of the light of the chromatic color.

[0046] In order for the chromatic light-transmissive resin layer to function as a colored layer (color filter), the optimal film thickness may be appropriately controlled in consideration of the relationship between the concentration of the coloring material to be included and the light transmittance. When the interlayer film is laminated with a plurality of thin films, if at least one layer is a chromatic light-transmissive resin layer, it can function as a color filter.

[0047] When the film thickness of the chromatic light-transmissive resin layer varies depending on the chromatic color, or when there are irregularities due to the light-shielding layer or thin-film transistor, a transparent (so-called colorless transparent) insulating layer that transmits light of wavelengths in the visible light region may be laminated to flatten the surface of the interlayer film. Improving the flatness of the interlayer film also improves the coverage of the pixel electrode layer and the common electrode layer formed thereon, and the gap (film thickness) of the liquid crystal layer can be made uniform, so that the visibility of the liquid crystal display device can be further improved and high image quality can be achieved.

[0048] As the colored light-transmissive resin layer 417, a light-transmissive organic resin, a colored pigment, and a dye can be used and they may be used by mixing a pigment, a dye, or the like into the organic resin. As the light-transmissive organic resin either a photosensitive or non-photosensitive resin can be used. Using a photosensitive organic resin layer is preferable because the number of resist masks can be reduced, simplifying the process. Also since the contact holes formed in the interlayer film also have an opening shape with curvature, the coverage of films such as the electrode layer formed in the contact holes can also be improved .

[0049] The method for forming the interlayer film 413 (colored light-transmissive resin layer 417) is not particularly limited, and depending on the material spin coating, dipping, spray coating, liquid droplet ejection methods (inkjet method, screen printing, offset printing, etc.) and other wet methods can be used, and if necessary, it can be processed into a desired pattern by an etching method (dry etching or wet etching) .

[0050] A liquid crystal layer 444 is provided on the first electrode layer 447 and the second electrode layer 446, and is sealed with a second substrate 442 on the opposing substrate .

[0051] The first substrate 441 and the second substrate 442 are light-transmissive substrates, and polarizing plates 443a and 443b are provided on the outside (the side opposite to the liquid crystal layer 444) respectively .

[0052] The first electrode layer 447 and the second electrode layer 446 are indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide , indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO) . ​, a conductive material having translucency such as indium zinc oxide or indium tin oxide added with silicon oxide can be used. It is possible to use a conductive material having translucency such as indium zinc oxide or indium tin oxide added with silicon oxide.

[0053] Further, as the first electrode layer 447 and the second electrode layer 446, a conductive composition containing a conductive polymer (also referred to as a conductive polymer) can be used to form them. Using the conductive composition The formed pixel electrode preferably has a sheet resistance of 10,000 Ω / □ or less and a light transmittance of 70% or more at a wavelength of 550 nm. Further, the resistivity of the conductive polymer contained in the conductive composition is preferably 0.1 Ω·cm or less. As the conductive polymer, so-called π-electron conjugated conductive polymers can be used. For example polyaniline or its derivatives, polypyrrole or its derivatives, polythiophene or

[0054] its derivatives, or copolymers of two or more of these can be mentioned. For example, polyaniline or its derivatives, polypyrrole or its derivatives, polythiophene or its derivatives, or copolymers of two or more of these can be mentioned.

[0055] An insulating film serving as an underlayer film may be provided between the first substrate 441, the gate electrode layer 401, and the first electrode layer 447. The underlayer film has a function of preventing the diffusion of impurity elements from the first substrate 441, and is selected from a silicon nitride film, a silicon oxide film, a silicon oxynitride film, or a silicon nitride oxide film It can be formed by a laminated structure of one or more films selected from these. The material of the gate electrode layer 401 is a metal material such as molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, scandium, etc. or an alloy material mainly composed of these, and can be formed in a single layer or by lamination. By using a conductive film having light-shielding properties for the gate electrode layer 401 light from the backlight (light incident from the first substrate 441) is prevented from reaching the semiconductor layer 403 It can be formed by laminating them. By using a conductive film having light-shielding properties for the gate electrode layer 401, light from the backlight (light incident from the first substrate 441) is prevented from reaching the semiconductor layer 403 It can be formed by laminating them. By using a conductive film having light-shielding properties for the gate electrode layer 401, light from the backlight (light incident from the first substrate 441) is prevented from reaching the semiconductor layer 403 It is possible to prevent light from the backlight (light incident from the first substrate 441) from reaching the semiconductor layer 403 It can be prevented from entering.

[0056] For example, as the two-layer stacked structure of the gate electrode layer 401, a two-layer stacked structure in which a molybdenum layer is stacked on an aluminum layer, or a two-layer structure in which a molybdenum layer is stacked on a copper layer, or a two-layer structure in which a titanium nitride layer or tantalum nitride is stacked on a copper layer, or a two-layer structure in which a titanium nitride layer and a molybdenum denum layer are stacked is preferable. As the three-layer stacked structure, it is preferable to stack a tungsten sten layer or tungsten nitride, an alloy of aluminum and silicon or an alloy of aluminum and titanium, and a titanium nitride or titanium layer.

[0057] The gate insulating layer 402 can be formed by using a plasma CVD method, a sputtering method, or the like, as a single layer or a stack of a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, or a silicon nitride oxide layer. Also, as the gate insulating layer 402, it is also possible to form a silicon oxide layer by a CVD method using an organic silane gas. As the organic silane gas used, silicon-containing compounds such as tetraethyl orthosilicate (TEOS: chemical formula Si(OC2H5)4), tetramethylsilane (TM S: chemical formula Si(CH3)4), tetramethylcyclotetrasiloxane (TMCTS), octamethylcyclotetrasiloxane (OMCTS), hexamethyldisilazane (HMD S), triethoxysilane (SiH(OC2H5)3), tris(dimethylamino)silane ( SiH(N(CH3)2)3), etc. can be used.

[0058] Before forming the oxide semiconductor film used as the semiconductor layer 403, reverse sputtering is performed by introducing argon gas to generate plasma to remove dust adhering to the surface of the gate insulating layer. ​ It is preferably carried out. Note that nitrogen, helium, etc. may be used instead of the argon atmosphere. Further, it may be carried out in an atmosphere in which oxygen, hydrogen, N2O, etc. are added to the argon atmosphere. Also, it may be carried out in an atmosphere in which Cl2, CF4, etc. are added to the argon atmosphere.

[0059] In this specification, as the oxide semiconductor, a thin film represented by InMO3(ZnO) m (m>0) is preferably used. The thin film transistor 420 forms a thin film represented by InMO3(ZnO) (m>0), and uses this thin film as the semiconductor layer 403. Note that M represents one metal element or a plurality of metal elements selected from gallium (Ga), m iron (Fe), nickel (Ni), manganese (Mn), and cobalt (Co). For example, in the case of M being Ga, in addition to other cases where the above metal elements other than Ga are included, such as Ga and Ni or Ga and Fe. Also, in the above oxide semiconductor, in addition to the metal elements contained as M, there are those containing impurity elements such as Fe, Ni, other transition metal elements, or oxides of the transition metals. For example, an In-Ga-Zn-O based non-crystalline film can be used as the oxide semiconductor layer.

[0060] InMO3(ZnO) m (m>0) film (layer), when M is gallium (Ga), in this specification, this thin film is also referred to as an In-Ga-Zn-O based non-crystalline film. The crystal structure of the In-Ga-Zn-O based non-crystalline film, after film formation by sputtering, even if heat treatment is carried out at 200°C ~500°C, typically 300~400°C for 10 minutes~100 minutes, an amorphous structure is observed by XRD (X-ray diffraction) analysis. Also, the electrical characteristics of the thin film transistor are also the same as those of the gate At a gate voltage of ±20 V, a device with an on-off ratio of 10 9 or more and a mobility of 10 or more can be fabricated. Also, an In-Ga-Zn-O-based polycrystalline film formed by sputtering using a target with In2O3:Ga2O3:ZnO = 1:1:1 has photosensitivity at a wavelength of 450 nm or less

[0061] As the semiconductor layer 403 and the n + layers 404a and 404 b that function as a source region or a drain region, an In-Ga-Zn-O-based polycrystalline film can be used. The n + layers 404a and 4 04b are oxide semiconductor layers having a lower resistance than the semiconductor layer 403. For example, the n + layers 404a and 404b have an n-type conductivity type and an activation energy (ΔE) of 0.01 eV or more and 0.1 eV or less. The n + layers 404a and 404b are In-Ga-Zn-O-based polycrystalline films and are assumed to contain at least an amorphous component. The n + layers 404a and 404b may contain crystal grains (nanocrystals) in an amorphous structure. The crystal grains (nanocrystals) in the n + layers 404a and 4 04b have a diameter of 1 nm to 10 nm, typically about 2 nm to 4 n m.

[0062] n + By providing the n layers 404a and 404b, a good junction is formed between the wiring layers 405a and 405b, which are metal layers, and the semiconductor layer 403, which is an oxide semiconductor layer, enabling thermally stable operation compared to a Schottky junction. Also, it supplies carriers to the channel (source side ), or stably absorbs carriers from the channel (drain side), or provides a resistance component for the ​​​​In order not to form at the interface with the wiring layer, it is effective to actively provide an n + layer. Also, by reducing the resistance, good mobility can be maintained even at a high drain voltage.

[0063] The first In-Ga-Zn-O-based polycrystalline film used as the semiconductor layer 403 is different from the film formation conditions of the second In-Ga-Zn-O-based polycrystalline film used as the n + layers 404 a and 404b. For example, the ratio of the oxygen gas flow rate to the argon gas flow rate in the film formation conditions of the second In-Ga-Zn-O-based polycrystalline film is set such that the ratio of the oxygen gas flow rate in the film formation conditions of the first In-Ga-Zn-O-based polycrystalline film is larger. Specifically, the film formation conditions of the second In-Ga-Z n-O-based polycrystalline film are in a rare gas (argon, helium, etc.) atmosphere (or oxygen gas 10% or less, argon gas 90% or more), and the film formation conditions of the first In-Ga-Zn-O -based polycrystalline film are in an oxygen atmosphere (or the flow rate of oxygen gas is equal to or greater than the flow rate of argon gas).

[0064] For example, the first In-Ga-Zn-O-based polycrystalline film used as the semiconductor layer 403 is formed using an 8-inch oxide semiconductor target containing In, Ga, and Zn (In2O3:Ga2O 3:ZnO = 1:1:1) with a distance of 170 mm between the substrate and the target, a pressure of 0.4 Pa, a DC power supply of 0.5 kW, and in an argon or oxygen atmosphere. Note that using a pulsed DC power supply is preferable because dust can be reduced and the film thickness distribution becomes uniform. The film thickness of the first In-Ga-Zn-O-based polycrystalline film is set to 5 nm to 200 nm.

[0065] On the other hand, n + ​​​​​​​​​The second In-Ga-Zn-O based amorphous film used as the layers 404a and 404b uses a target with In2O3:Ga2O3:ZnO = 1:1:1, and the film formation conditions are , with the pressure set at 0.4 Pa, the power at 500 W, the film formation temperature at room temperature, and the argon gas flow rate introduced at 40 sccm, and the film is formed by sputtering. Immediately after film formation, an In-Ga-Zn-O based amorphous film containing crystal grains sized 1 nm to 10 nm may be formed. Note that the component ratio of the target, the film formation pressure (0.1 Pa to 2.0 Pa), the power (250 W to 3000 W: 8-inch φ), the temperature (room temperature to 100 °C), the film formation conditions of reactive sputtering, etc. can be adjusted as appropriate so that the presence or absence of crystal grains, the density of crystal grains, and the diameter size can be adjusted within the range of 1 nm to 10 nm It can be said. The film thickness of the second In-Ga-Zn-O based amorphous film is set at 5 nm to 20 n m. Of course, when crystal grains are contained in the film, the size of the contained crystal grains does not exceed the film thickness size. The film thickness of the second In-Ga-Zn-O based amorphous film is 5 nm.

[0066] For the sputtering method, there are the RF sputtering method that uses a high-frequency power supply for the sputtering power supply and the DC sputtering method , and there is also the pulsed DC sputtering method that applies a bias pulse. The RF sputtering method is mainly used when forming an insulating film, and the DC sputtering method is mainly used when forming a metal film .

[0067] There is also a multi-source sputtering device that can install multiple targets with different materials. The multi-source sputtering device can either deposit different material films in the same chamber in a laminated manner or discharge multiple types of materials simultaneously in the same chamber to form a film.

[0068] Also, there is a sputtering apparatus that uses a magnetron sputtering method equipped with a magnet mechanism inside the chamber. In addition, there is an ECR sputtering apparatus that uses plasma generated using microwaves without using glow discharge. There is a sputtering apparatus that uses this method.

[0069] Also, as a film formation method using the sputtering method, there is a reactive sputtering method in which a target substance and a sputtering gas component are chemically reacted during film formation to form a compound thin film thereof, or a bias sputtering method in which a voltage is also applied to a substrate during film formation. During film formation, There is also a bias sputtering method in which a voltage is applied to the substrate.

[0070] Semiconductor layer, n + In the manufacturing process of the layer and the wiring layer, an etching process is used to process the thin film into a desired shape. The etching process can use dry etching or wet etching. During film formation, It can be used.

[0071] As the etching gas used for dry etching, a gas containing chlorine (chlorine-based gas, for example, chlorine (Cl2), boron trichloride (BCl3), silicon tetrachloride (SiCl4), carbon tetrachloride (CCl 4), etc.) is preferred.

[0072] Also, a gas containing fluorine (fluorine-based gas, for example, carbon tetrafluoride (CF4), sulfur hexafluoride (SF 6), nitrogen trifluoride (NF3), trifluoromethane (CHF3), etc.), hydrogen bromide (HBr ), oxygen (O2), a gas obtained by adding a noble gas such as helium (He) or argon (Ar) to these gases, etc. can be used.

[0073] As the etching apparatus used for dry etching, an etching apparatus using the reactive ion etching method (RIE method) or an ECR (Electron Cyclotron Re ​​sonance) and ICP (Inductively Coupled Plasma) A dry etching apparatus using a high-density plasma source such as this can be used. Also, I Compared with an ICP etching apparatus, a dry etching apparatus that can easily obtain a uniform discharge over a wide area is one in which the upper electrode is grounded and a 13.56 MHz high-frequency power source is connected to the lower electrode and, furthermore, a 3.2 MHz low-frequency power source is connected to the lower electrode, an ECCP (Enhanced Capacitively Coupled Plasma) mode etching apparatus There is. With this ECCP mode etching apparatus, for example, as a substrate, even when using a substrate with a size exceeding 3 m of the 10th generation it can also be accommodated.

[0074] The etching conditions (the amount of power applied to the coil-type electrode, the amount of power applied to the electrode on the substrate side, the temperature of the electrode on the substrate side, etc.) are appropriately adjusted so that etching can be performed into a desired processed shape.

[0075] As the etching solution used for wet etching, a solution obtained by mixing phosphoric acid, acetic acid, and nitric acid, ammonia peroxide (hydrogen peroxide: ammonia: water = 5: 2: 2), etc. can be used. Also, ITO07N (manufactured by Kanto Chemical Co., Inc.) may be used.

[0076] Also, the etching solution after wet etching is removed together with the etched material by washing. The waste liquid of the etching solution containing the removed material is purified, and the contained material may be reused. By recovering and reusing materials such as indium contained in the oxide semiconductor layer from the waste liquid after the etching, resources can be effectively utilized and the cost can be reduced .

[0077] Adjust the etching conditions (etching solution, etching time, temperature, etc.) as appropriate according to the material so that the desired processed shape can be etched. The etching conditions (etching solution, etching time, temperature, etc.) are adjusted as appropriate according to the material so that the desired processed shape can be etched.

[0078] As materials for the wiring layers 405a and 405b, elements selected from Al, Cr, Ta, Ti, Mo, and W, alloys containing the above-described elements as components, or alloy films formed by combining the above-described elements can be mentioned. When performing heat treatment at 200°C to 600°C, it is preferable to endow the conductive film with heat resistance that can withstand this heat treatment. Aluminum alone has poor heat resistance and has problems such as corrosion and easy oxidation, so it is formed in combination with a heat-resistant conductive material. As the heat-resistant conductive material combined with aluminum, elements selected from titanium (Ti), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), neodymium (Nd), and scandium (Sc), alloys containing the above-described elements as components, alloy films formed by combining the above-described elements, or nitrides containing the above-described elements as components are used. The gate insulating layer 402, the semiconductor layer 403, the n layers 404a and 404b, and the wiring layers 405a and 405b may be continuously formed without being exposed to the atmosphere. By continuously forming the film without exposure to the atmosphere, each laminated interface can be formed without being contaminated by atmospheric components or contaminant impurity elements floating in the atmosphere, so that variations in thin-film transistor characteristics can be reduced. Note that only a part of the semiconductor layer 403 is etched, and it is a semiconductor layer having a groove (concave portion). The semiconductor layer 403, n layers 404a and 404b, and the wiring layers 405a and 405b may be continuously formed without being exposed to the atmosphere. By continuously forming the film without exposure to the atmosphere, each laminated interface can be formed without being contaminated by atmospheric components or contaminant impurity elements floating in the atmosphere, so that variations in thin-film transistor characteristics can be reduced. Note that only a part of the semiconductor layer 403 is etched, and it is a semiconductor layer having a groove (concave portion).

[0079] layers 404a, 404b, wiring layers 405a, 4 + 05b can be continuously formed without being exposed to the atmosphere. By continuously forming the film without exposure to the atmosphere, each laminated interface can be formed without being contaminated by atmospheric components or contaminant impurity elements floating in the atmosphere, so that variations in thin-film transistor characteristics can be reduced. 05b may be continuously formed without being exposed to the atmosphere. By continuously forming the film without exposure to the atmosphere, each laminated interface can be formed without being contaminated by atmospheric components or contaminant impurity elements floating in the atmosphere, so that variations in thin-film transistor characteristics can be reduced. By continuously forming the film without exposure to the atmosphere, each laminated interface can be formed without being contaminated by atmospheric components or contaminant impurity elements floating in the atmosphere, so that variations in thin-film transistor characteristics can be reduced. Since each laminated interface can be formed without being contaminated by atmospheric components or contaminant impurity elements floating in the atmosphere, variations in thin-film transistor characteristics can be reduced. Note that only a part of the semiconductor layer 403 is etched, and it is a semiconductor layer having a groove (concave portion).

[0080] Note that only a part of the semiconductor layer 403 is etched, and it is a semiconductor layer having a groove (concave portion). Note that only a part of the semiconductor layer 403 is etched, and it is a semiconductor layer having a groove (concave portion).

[0081] The semiconductor layer 403, n +Layers 404a and 404b are preferably heat-treated at 200°C to 600°C, typically 300°C ~500°C. For example, heat treatment is performed at 350°C for 1 hour in a nitrogen atmosphere This heat treatment enables atomic-level rearrangement of the In-G + a-Zn-O-based oxide semiconductor that constitutes the semiconductor layer 403 and the n layers 404a and 404b. This heat treatment (including photo annealing etc.) is important in that it can release the strain that inhibits carrier movement in the semiconductor layer 403 and the n + layers 404a and 404b. Note that the timing of the above heat treatment is not particularly limited as long as it is after the formation of the semiconductor layer 403 and the n layers 404a and 404b. semiconductor layer 403, n + layers 404a and 404b.

[0082] In addition, oxygen radical treatment may be performed on the concave portion of the exposed semiconductor layer 403. The radical treatment is preferably performed in an atmosphere such as O2, N2O, N2 containing oxygen, He, or Ar It may also be performed in an atmosphere in which Cl2 or CF4 is added to the above atmosphere. Note that the radical treatment is preferably performed without applying a bias voltage to the first substrate 441 side

[0083] Note that the structure of the thin film transistor formed in the liquid crystal display device is not particularly limited. The thin film transistor may have a single gate structure in which one channel formation region is formed, a double gate structure in which two are formed or a triple gate structure in which three are formed. Also, the transistors in the peripheral drive circuit region may have a single gate structure, a double gate structure, or a triple gate structure The thin film transistor may be a top gate type (e.g., staggered type, coplanar type), a bottom gate type

[0084] The thin film transistor may be a top gate type (e.g., staggered type, coplanar type), a bottom gate ​​​Type (e.g., inverse staggered type, inverse coplanar type), or two gate electrode layers arranged via a gate insulating film above and below the channel region It can also be applied in dual-gate types and other structures having them.

[0085] Also, an alignment film, optical films such as a polarizing plate, a retardation plate, and an antireflection film are provided as appropriate. For example, circular polarization by a polarizing plate and a retardation plate may be used. Also, a backlight, a side light, etc. may be used as the light source.

[0086] The insulating film 407 covering the thin film transistor 420 can be an inorganic insulating film formed by a dry method or a wet method , or an organic insulating film. For example, a silicon nitride film, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, a tantalum oxide film, etc. obtained by using a CVD method, a sputtering method, etc. can be used. Also, organic materials such as acrylic, polyimide, benzocyclobutene, polyamide, and epoxy can be used. In addition to the above organic materials, low dielectric constant materials (low-k materials), siloxane-based resins, PSG (phosphosilicate glass), BPSG (borophosphosilicate glass), etc. can be used.

[0087] The siloxane-based resin corresponds to a resin containing a Si-O-Si bond formed using a siloxane-based material as a starting material. The siloxane-based resin may use an organic group (e.g., an alkyl group or an aryl group) or a fluoro group as a substituent. Also, the organic group may have a fluoro group. The siloxane-based resin can be formed into a film by a coating method and fired to be used as the insulating film 407.

[0088] Note that the insulating film 407 can be formed by laminating a plurality of insulating films formed of these materials. This is also acceptable. For example, a structure in which an organic resin film is laminated on an inorganic insulating film may be used.

[0089] As the liquid crystal material of the liquid crystal layer 444, various liquid crystals can be used, such as lyotropic liquid crystals , thermotropic liquid crystals, low-molecular liquid crystals, high-molecular liquid crystals, discotic liquid crystals, ferroelectric liquid crystals, antiferroelectric liquid crystals, etc., which can be appropriately selected and used.

[0090] In this specification, when the liquid crystal display device is a transmissive type liquid crystal display device (or a transflective liquid crystal display device) that performs display by transmitting the light of a light source, at least in the pixel region it is necessary to transmit light. Therefore, the first substrate, the second substrate, the pixel electrode layer, the common electrode layer, other insulating films, conductive films, etc. included in the element layer, which are present in the pixel region where light is transmitted, should all be made transparent to light in the wavelength region of visible light.

[0091] For the first substrate 441 and the second substrate 442, glass substrates such as barium borosilicate glass and aluminoborosilicate glass, quartz substrates, plastic substrates, etc. can be used.

[0092] In addition, when using a resist mask having regions of a plurality of (typically two types) thicknesses formed by a multi-tone mask, the number of resist masks can be reduced, so that the process can be simplified and the cost can be reduced. Cost reduction can be achieved.

[0093] By improving the contrast and viewing angle characteristics, a liquid crystal display device with higher image quality can be provided. In addition, the liquid crystal display device can be manufactured at a lower cost and with higher productivity.

[0094] In addition, the characteristics of the thin film transistor can be stabilized and the reliability of the liquid crystal display device can be improved. This is possible.

[0095] (Embodiment 2) Another form of the liquid crystal display device is shown in FIG. 3. Specifically, a flat first electrode formed in the lower layer layer is used as the pixel electrode layer, and an example of a liquid crystal display device using a second electrode layer having an opening pattern formed in the upper layer as the common electrode layer is shown. For those similar to Embodiment 1, the same materials and manufacturing methods can be applied, and detailed descriptions of the same parts or parts having similar functions are omitted.

[0096] FIG. 3(A) is a plan view of the liquid crystal display device showing the pixels for one pixel. FIG. 3(B) is a cross-sectional view taken along line X1-X2 in FIG 3(A).

[0097] In FIG. 3(A), a plurality of source wiring layers (including the wiring layer 405a) are arranged parallel to each other (extending in the vertical direction in the figure and spaced apart from each other). A plurality of gate wiring layers (including the gate electrode layer 401) extend in a direction substantially orthogonal to the source wiring layer (the left-right direction in the figure), and are arranged so as to be spaced apart from each other. The common wiring layer 408 is arranged at a position adjacent to each of the plurality of gate wiring layers, and extends in a direction substantially parallel to the gate wiring layer, that is, in a direction substantially orthogonal to the source wiring layer (the left-right direction in the figure). The source wiring layer, the common wiring layer 408, and the gate wiring layer surround a substantially rectangular space, and the pixel electrode layer and the common electrode layer of the liquid crystal display device are arranged in this space. The thin film transistor 420 for driving the pixel electrode layer is arranged at the upper left corner in the figure. A plurality of pixel electrode layers and thin film transistors are arranged in a matrix. are arranged. transistor is arranged at the upper left corner in the figure. The pixel electrode layer and the thin film transistor are arranged in a plurality in a matrix.

[0098] In the liquid crystal display device of FIG. 3, a first electrode layer 447 that is electrically connected to the thin film transistor 420 functions as a pixel electrode layer, and a second electrode layer 446 that is electrically connected to the common wiring layer functions as a common electrode layer. The first electrode layer 447 is electrically connected to the thin film transistor 420 at a contact hole formed in the gate insulating layer 402. Also, the second electrode layer 446 is electrically connected to the common wiring layer 408 at contact holes formed in the gate insulating layer 402, the insulating film 407, and the interlayer film 413. Note that a capacitance is formed by the pixel electrode layer and the common electrode layer. When a colored light-transmissive resin layer 417 is used as the interlayer film 413 provided on the thin film transistor 420, the intensity of light incident on the semiconductor layer of the thin film transistor 420 can be attenuated without reducing the aperture ratio of the pixel, and an effect of preventing fluctuations in the electrical characteristics of the thin film transistor due to the photosensitivity of the oxide semiconductor and stabilizing them can be obtained. Also, the colored light-transmissive resin

[0099] layer 417 can function as a color filter layer. When the color filter layer is provided on the counter substrate side, it is difficult to accurately align the pixel regions with the element substrate on which the thin film transistors are formed, and there is a risk of degrading the image quality. However, since the interlayer film is directly formed on the element substrate side as the color filter layer, more precise control of the formation region is possible, and it is possible to handle pixels with fine patterns. Also, since the interlayer film and the color filter layer are made of the same insulating layer, the process is simplified and a liquid crystal display device can be manufactured at a lower cost. By improving the contrast and viewing angle characteristics, a liquid crystal display device with higher image quality is provided. When the color filter layer is provided on the counter substrate side, it is difficult to accurately align the pixel regions with the element substrate on which the thin film transistors are formed, and there is a risk of degrading the image quality. However, since the interlayer film is directly formed on the element substrate side as the color filter layer, more precise control of the formation region is possible, and it is possible to handle pixels with fine patterns. Also, since the interlayer film and the color filter layer are made of the same insulating layer, the process is simplified and a liquid crystal display device can be manufactured at a lower cost. substrate side as the color filter layer, more precise control of the formation region is possible, and it is possible to handle pixels with fine patterns. Also, since the interlayer film and the color filter layer are made of the same insulating layer, the process is simplified and a liquid crystal display device can be manufactured at a lower cost. By improving the contrast and viewing angle characteristics, a liquid crystal display device with higher image quality is provided.

[0100] By improving the contrast and viewing angle characteristics, a liquid crystal display device with higher image quality is provided. This can be achieved. In addition, the liquid crystal display device can be manufactured at a lower cost and with higher productivity.

[0101] In addition, the characteristics of the thin film transistor can be stabilized, and the reliability of the liquid crystal display device can be improved. This is possible.

[0102] (Embodiment 3) Other forms of the liquid crystal display device are shown in FIGS. 4 and 7. Specifically, a configuration example in which the first electrode layer is provided above the thin film transistor is shown. For those similar to Embodiment 1 and Embodiment 2, the same materials and manufacturing methods can be applied, and detailed descriptions of the same parts or parts having similar functions are omitted. Regarding those similar to Embodiment 1 and Embodiment 2, the same materials and manufacturing methods can be applied, and detailed descriptions of the same parts or parts having similar functions are omitted. Regarding those similar to Embodiment 1 and Embodiment 2, the same materials and manufacturing methods can be applied, and detailed descriptions of the same parts or parts having similar functions are omitted. Regarding those similar to Embodiment 1 and Embodiment 2, the same materials and manufacturing methods can be applied, and detailed descriptions of the same parts or parts having similar functions are omitted.

[0103] FIGS. 4(A) and 7(A) are plan views of the liquid crystal display device showing the pixels for one pixel. FIGS. 4(B) and 7(B) are cross-sectional views taken along lines X1-X2 in FIGS. 4(A) and 7(A), respectively. FIGS. 4(B) and 7(B) are cross-sectional views taken along lines X1-X2 in FIGS. 4(A) and 7(A), respectively. These are cross-sectional views.

[0104] In the plan views of FIGS. 4(A) and 7(A), similar to Embodiment 2, a plurality of source wiring layers (including wiring layer 405a) are arranged parallel to each other (extending in the vertical direction in the figure) and spaced apart from each other. The plurality of gate wiring layers (including gate electrode layer 401) extend in a direction substantially orthogonal to the source wiring layer (in the left-right direction in the figure) and are arranged spaced apart from each other. The common wiring layer 408 is arranged at a position adjacent to each of the plurality of gate wiring layers, and extends in a direction substantially parallel to the gate wiring layer, that is, in a direction substantially orthogonal to the source wiring layer (in the left-right direction in the figure). The source wiring layer, the common wiring layer 408, and the gate wiring layer surround a substantially rectangular space, and in this space, the pixel electrode layer and the common electrode of the liquid crystal display device are provided. In the plan views of FIGS. 4(A) and 7(A), similar to Embodiment 2, a plurality of source wiring layers (including wiring layer 405a) are arranged parallel to each other (extending in the vertical direction in the figure) and spaced apart from each other. In the plan views of FIGS. 4(A) and 7(A), similar to Embodiment 2, a plurality of source wiring layers (including wiring layer 405a) are arranged parallel to each other (extending in the vertical direction in the figure) and spaced apart from each other. The plurality of gate wiring layers (including gate electrode layer 401) extend in a direction substantially orthogonal to the source wiring layer (in the left-right direction in the figure) and are arranged spaced apart from each other. The plurality of gate wiring layers (including gate electrode layer 401) extend in a direction substantially orthogonal to the source wiring layer (in the left-right direction in the figure) and are arranged spaced apart from each other. The common wiring layer 408 is arranged at a position adjacent to each of the plurality of gate wiring layers, and extends in a direction substantially parallel to the gate wiring layer, that is, in a direction substantially orthogonal to the source wiring layer (in the left-right direction in the figure). The common wiring layer 408 is arranged at a position adjacent to each of the plurality of gate wiring layers, and extends in a direction substantially parallel to the gate wiring layer, that is, in a direction substantially orthogonal to the source wiring layer (in the left-right direction in the figure). The source wiring layer, the common wiring layer 408, and the gate wiring layer surround a substantially rectangular space, and in this space, the pixel electrode layer and the common electrode of the liquid crystal display device are provided. A layer is arranged. The thin-film transistor 420 that drives the pixel electrode layer is located at the upper left corner in the figure. It is arranged. A plurality of pixel electrode layers and thin-film transistors are arranged in a matrix.

[0105] In the liquid crystal display devices of FIGS. 4(B) and 7(B), a flat first electrode layer 447 electrically connected to the thin-film transistor 420 functions as a pixel electrode layer, and a second electrode layer 446 having an opening pattern electrically connected to the common wiring layer 408 functions as a common electrode layer. In FIG. 4, the first electrode layer 447 is formed on the insulating film 407. An interlayer film 413 is laminated on the first electrode layer 447, and the second electrode layer 446 is formed on the interlayer film 413. Note that in FIG. 4, a capacitance is formed by the first electrode layer and the common electrode layer.

[0106] In FIG. 7, the first electrode layer 447 is formed on the interlayer film 413. An insulating film 416 is laminated on the first electrode layer 447, and the second electrode layer 446 is formed on the insulating film 416. Note that in FIG. 7, a capacitance is formed by the first electrode layer and the common electrode layer.

[0107] When a colored light-transmitting resin layer 417 is used as the interlayer film 413 provided on the thin-film transistor 420, the intensity of light incident on the semiconductor layer 403 of the thin-film transistor 420 can be attenuated without reducing the aperture ratio of the pixel, and the effect of preventing and stabilizing fluctuations in the electrical characteristics of the thin-film transistor 420 due to the photosensitivity of the oxide semiconductor can be obtained. Further, the colored light-transmitting resin layer 417 can function as a color filter layer.

[0108] When a colored light-transmitting resin layer 417 is used as the interlayer film 413 provided on the thin-film transistor 420, the intensity of light incident on the semiconductor layer 403 of the thin-film transistor 420 can be attenuated without reducing the aperture ratio of the pixel, and the effect of preventing and stabilizing fluctuations in the electrical characteristics of the thin-film transistor 420 due to the photosensitivity of the oxide semiconductor can be obtained. Further, the colored light-transmitting resin layer 417 can function as a color filter layer. When a colored light-transmitting resin layer 417 is used as the interlayer film 413 provided on the thin-film transistor 420, the intensity of light incident on the semiconductor layer 403 of the thin-film transistor 420 can be attenuated without reducing the aperture ratio of the pixel, and the effect of preventing and stabilizing fluctuations in the electrical characteristics of the thin-film transistor 420 due to the photosensitivity of the oxide semiconductor can be obtained. Further, the colored light-transmitting resin layer 417 can function as a color filter layer. When a colored light-transmitting resin layer 417 is used as the interlayer film 413 provided on the thin-film transistor 420, the intensity of light incident on the semiconductor layer 403 of the thin-film transistor 420 can be attenuated without reducing the aperture ratio of the pixel, and the effect of preventing and stabilizing fluctuations in the electrical characteristics of the thin-film transistor 420 due to the photosensitivity of the oxide semiconductor can be obtained. Further, the colored light-transmitting resin layer 417 can function as a color filter layer. When a colored light-transmitting resin layer 417 is used as the interlayer film 413 provided on the thin-film transistor 420, the intensity of light incident on the semiconductor layer 403 of the thin-film transistor 420 can be attenuated without reducing the aperture ratio of the pixel, and the effect of preventing and stabilizing fluctuations in the electrical characteristics of the thin-film transistor 420 due to the photosensitivity of the oxide semiconductor can be obtained. Further, the colored light-transmitting resin layer 417 can function as a color filter layer. ​​​​​​​When the ruthenium layer is provided on the counter substrate side, it is difficult to accurately align with the element substrate on which the thin film transistor is formed, and there is a risk of deteriorating the image quality. However, since the interlayer film is formed directly on the element substrate side as the color filter layer, more precise control of the formation region is possible, and it is possible to cope with fine patterns in the pixels. In addition, since the interlayer film and the color filter layer are made of the same insulating layer, the process is simplified and a liquid crystal display device can be manufactured at a lower cost. Although it is difficult to align the position of the pixel region and there is a risk of deteriorating the image quality, since the interlayer film is formed directly on the element substrate side as the color filter layer, more precise control of the formation region is possible, and it is possible to cope with fine patterns in the pixels. In addition, since the interlayer film and the color filter layer are made of the same insulating layer, the process is simplified and a liquid crystal display device can be manufactured at a lower cost. By improving the contrast and viewing angle characteristics, a liquid crystal display device with higher image quality can be provided. In addition, the liquid crystal display device can be manufactured at a lower cost with higher productivity.

[0109] In addition, the characteristics of the thin film transistor can be stabilized and the reliability of the liquid crystal display device can be improved. In addition, the liquid crystal display device can be manufactured at a lower cost with higher productivity.

[0110] In addition, the characteristics of the thin film transistor can be stabilized and the reliability of the liquid crystal display device can be improved. It is possible.

[0111] (Embodiment 4) A liquid crystal display device having a light shielding layer (black matrix) will be described with reference to FIG. 5.

[0112] The liquid crystal display device shown in FIG. 5 is an example in which a light shielding layer 414 is further formed on the side of the second substrate 442 which is the counter substrate in the liquid crystal display device shown in FIGS. 1(A) and 1(B) of Embodiment 1. Therefore, the same materials and manufacturing methods can be applied to those similar to Embodiment 1, and detailed descriptions of the same parts or parts having the same functions are omitted. Therefore, the same materials and manufacturing methods can be applied to those similar to Embodiment 1, and detailed descriptions of the same parts or parts having the same functions are omitted. Therefore, the same materials and manufacturing methods can be applied to those similar to Embodiment 1, and detailed descriptions of the same parts or parts having the same functions are omitted. Therefore, the same materials and manufacturing methods can be applied to those similar to Embodiment 1, and detailed descriptions of the same parts or parts having the same functions are omitted.

[0113] FIG. 5(A) is a plan view of the liquid crystal display device, and FIG. 5(B) is a cross-sectional view taken along line X1-X2 of FIG. 5(A). In the plan view of FIG. 5(A), only the element substrate side is shown, and the description of the counter substrate side is omitted. In the plan view of FIG. 5(A), only the element substrate side is shown, and the description of the counter substrate side is omitted. The description of the counter substrate side is omitted.

[0114] On the liquid crystal layer 444 side of the second substrate 442, a light-shielding layer 414 is formed, and an insulating layer 415 is formed as a planarization film. The light-shielding layer 414 is preferably formed in a region corresponding to the thin film transistor 420 (a region overlapping with the semiconductor layer of the thin film transistor). It is preferable to form it in a region corresponding to the thin film transistor 420 (a region overlapping with the semiconductor layer of the thin film transistor). The first substrate 441 and the second substrate 442 sandwich the liquid crystal layer 444 and are fixed so that the light-shielding layer 414 covers at least above the semiconductor layer 403 of the thin film transistor 420. The first substrate 441 and the second substrate 442 sandwich the liquid crystal layer 444 and are fixed so that the light-shielding layer 414 covers at least above the semiconductor layer 403 of the thin film transistor 420.

[0115] The visible light transmittance of the light-shielding layer 414 is lower than that of the semiconductor layer 403 which is an oxide semiconductor layer. The visible light transmittance of the light-shielding layer 414 is lower than that of the semiconductor layer 403 which is an oxide semiconductor layer.

[0116] The light-shielding layer 414 uses a material that reflects or absorbs light and has light-shielding properties. For example, a black organic resin can be used, and a resin material such as photosensitive or non-photosensitive polyimide can be mixed with a pigment-based black resin, carbon black, titanium black, etc. to form it. Also, a light-shielding metal film can be used, for example, chromium, molybdenum, nickel, titanium, The light-shielding layer 414 uses a material that reflects or absorbs light and has light-shielding properties. For example, a black organic resin can be used, and a resin material such as photosensitive or non-photosensitive polyimide can be mixed with a pigment-based black resin, carbon black, titanium black, etc. to form it. Also, a light-shielding metal film can be used, for example, chromium, molybdenum, nickel, titanium, cobalt, copper, tungsten, or aluminum can be used. cobalt, copper, tungsten, or aluminum can be used.

[0117] The method for forming the light-shielding layer 414 is not particularly limited, and depending on the material, dry methods such as evaporation, sputtering, and CVD methods, or wet methods such as spin coating, dipping, spray coating, and droplet discharge methods (inkjet method, screen printing, offset printing, etc.) can be used, and if necessary, it can be processed into a desired pattern by an etching method (dry etching or wet etching). The method for forming the light-shielding layer 414 is not particularly limited, and depending on the material, dry methods such as evaporation, sputtering, and CVD methods, or wet methods such as spin coating, dipping, spray coating, and droplet discharge methods (inkjet method, screen printing, offset printing, etc.) can be used, and if necessary, it can be processed into a desired pattern by an etching method (dry etching or wet etching). The insulating layer 415 is also formed using an organic resin such as acrylic or polyimide by spin coating or various The insulating layer 415 is also formed using an organic resin such as acrylic or polyimide by spin coating or various methods.

[0118] The insulating layer 415 is also formed using an organic resin such as acrylic or polyimide by spin coating or various ​​It may be formed by a coating method such as a printing method.

[0119] When the light-shielding layer 414 is further provided on the counter substrate side in this way, the effects of improving the contrast and stabilizing the thin film transistor can be enhanced. Since the light-shielding layer 414 can block the incidence of light on the semiconductor layer 403 of the thin film transistor 42 0, it prevents fluctuations in the electrical characteristics of the thin film transistor 420 due to the photosensitivity of the oxide semiconductor and makes it more stable. Further, since the light-shielding layer 414 can also prevent light leakage to adjacent pixels, it becomes possible to perform higher contrast and high-definition display. Therefore, high definition and high reliability of the liquid crystal display device can be achieved .

[0120] By improving the contrast and viewing angle characteristics, a liquid crystal display device with higher image quality can be provided . Further, the liquid crystal display device can be manufactured at a lower cost and with higher productivity.

[0121] Also, the characteristics of the thin film transistor can be stabilized and the reliability of the liquid crystal display device can be improved .

[0122] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments .

[0123] (Embodiment 5) A liquid crystal display device having a light-shielding layer (black matrix) will be described with reference to FIG. 6.

[0124] As a film having a function of attenuating the light intensity of transmitted visible light, a colored layer serving as a light-shielding layer can also be used . The liquid crystal display device shown in FIG. 6 is the liquid crystal display device shown in FIGS. 1(A) and 1(B) of Embodiment 1. On the side of the first substrate 441, which is an element substrate, as a part of the interlayer film 413 ​​This is an example of forming the light-shielding layer 414. Therefore, for those similar to Embodiment 1, the same materials and manufacturing methods can be applied, and detailed descriptions of the same parts or parts having the same functions are omitted.

[0125] FIG. 6(A) is a plan view of the liquid crystal display device, and FIG. 6(B) is a cross-sectional view taken along line X1-X2 of FIG. 6(A). In the plan view of FIG. 6(A), only the element substrate side is illustrated, and the description of the counter substrate side is omitted.

[0126] The interlayer film 413 includes a light-shielding layer 414 and a colored light-transmissive resin layer 417. The light-shielding layer 414 is provided on the side of the first substrate 441 which is the element substrate, and is formed via an insulating film 407 on the thin film transistor 420 (at least the region covering the semiconductor layer of the thin film transistor), and functions as a light-shielding layer for the semiconductor layer 403. On the other hand, the colored light-transmissive resin layer 417 is formed in a region overlapping the first electrode layer 447 and the second electrode layer 446, and functions as a color filter layer. In the liquid crystal display device of FIG. 6(B), a part of the second electrode layer 446 is formed on the light-shielding layer 414, and a liquid crystal layer 444 is provided thereon.

[0127] The visible light transmittance of the light-shielding layer 414 is lower than the visible light transmittance of the semiconductor layer 403 which is an oxide semiconductor layer.

[0128] Since the light-shielding layer 414 is used as an interlayer film, it is preferable to use a black organic resin. For example, a resin material such as photosensitive or non-photosensitive polyimide can be mixed with a pigment-based black resin, carbon black, titanium black, etc. to form it. The formation method of the light-shielding layer 414 depends on the material and can be spin coating, dipping, spray coating, droplet discharge method (inkjet method, screen Use a wet method such as screen printing or offset printing, or use a dry method such as vapor deposition, sputtering, or CVD method, or process it into a desired pattern by an etching method (dry etching or wet etching) as necessary. Use a dry method such as CVD method, or process it into a desired pattern by an etching method (dry etching or wet etching) as necessary. It may be processed into a desired pattern.

[0129] A light-shielding layer may be further formed on the counter substrate side of the liquid crystal display device. This can enhance the effect of improving contrast and stabilizing the thin film transistor. When forming the light-shielding layer on the counter substrate side, if it is formed in the region corresponding to the thin film transistor (at least the region overlapping the semiconductor layer of the thin film transistor) through the liquid crystal layer, it is possible to further prevent fluctuations in the electrical characteristics of the thin film transistor due to light incident from the counter substrate. When forming the light-shielding layer on the counter substrate side, since the semiconductor layer of the thin film transistor may block both the light from the element substrate and the light from the counter substrate by a light-shielding wiring layer or an electrode layer, etc., it is not always necessary to form the light-shielding layer so as to cover the thin film transistor. When forming the light-shielding layer on the counter substrate side, if the semiconductor layer of the thin film transistor can block both the light from the element substrate and the light from the counter substrate by a light-shielding wiring layer or an electrode layer, etc., it is not always necessary to form the light-shielding layer so as to cover the thin film transistor. When forming the light-shielding layer on the counter substrate side, if the semiconductor layer of the thin film transistor can block both the light from the element substrate and the light from the counter substrate by a light-shielding wiring layer or an electrode layer, etc., it is not always necessary to form the light-shielding layer so as to cover the thin film transistor. When forming the light-shielding layer on the counter substrate side, if the semiconductor layer of the thin film transistor can block both the light from the element substrate and the light from the counter substrate by a light-shielding wiring layer or an electrode layer, etc., it is not always necessary to form the light-shielding layer so as to cover the thin film transistor.

[0130] When forming the light-shielding layer on the counter substrate side, since the semiconductor layer of the thin film transistor may block both the light from the element substrate and the light from the counter substrate by a light-shielding wiring layer or an electrode layer, etc., it is not always necessary to form the light-shielding layer so as to cover the thin film transistor. When forming the light-shielding layer on the counter substrate side, since the semiconductor layer of the thin film transistor may block both the light from the element substrate and the light from the counter substrate by a light-shielding wiring layer or an electrode layer, etc., it is not always necessary to form the light-shielding layer so as to cover the thin film transistor. When forming the light-shielding layer on the counter substrate side, since the semiconductor layer of the thin film transistor may block both the light from the element substrate and the light from the counter substrate by a light-shielding wiring layer or an electrode layer, etc., it is not always necessary to form the light-shielding layer so as to cover the thin film transistor.

[0131] In addition, the light-shielding layer may be laminated and provided above or below the colored light-transmissive resin layer. An example of the laminated structure of the light-shielding layer and the colored light-transmissive resin layer is shown in FIG. 17. FIGS. 17(A) and 17(B) show that an element layer 203 is formed on a first substrate 200 which is an element substrate, and an interlayer film 209 is formed on the element layer 203. The interlayer film 209 includes colored light-transmissive resin layers 204a, 204b, 204c and light-shielding layers 205a, 205b, 205c, 205d, and the light-shielding layers 205a, 205b, 205c, 205d are respectively formed between the colored light-transmissive resin layers 204a, 204b, 204c. Note that in FIGS. 17(A) and 17(B), the included pixel electrode layer and common electrode are not shown. An example of the laminated structure of the light-shielding layer and the colored light-transmissive resin layer is shown in FIG. 17. FIGS. 17(A) and 17(B) show that an element layer 203 is formed on a first substrate 200 which is an element substrate, and an interlayer film 209 is formed on the element layer 203. The interlayer film 209 includes colored light-transmissive resin layers 204a, 204b, 204c and light-shielding layers 205a, 205b, 205c, 205d, and the light-shielding layers 205a, 205b, 205c, 205d are respectively formed between the colored light-transmissive resin layers 204a, 204b, 204c. Note that in FIGS. 17(A) and 17(B), the included pixel electrode layer and common electrode are not shown. An example of the laminated structure of the light-shielding layer and the colored light-transmissive resin layer is shown in FIG. 17. FIGS. 17(A) and 17(B) show that an element layer 203 is formed on a first substrate 200 which is an element substrate, and an interlayer film 209 is formed on the element layer 203. The interlayer film 209 includes colored light-transmissive resin layers 204a, 204b, 204c and light-shielding layers 205a, 205b, 205c, 205d, and the light-shielding layers 205a, 205b, 205c, 205d are respectively formed between the colored light-transmissive resin layers 204a, 204b, 204c. Note that in FIGS. 17(A) and 17(B), the included pixel electrode layer and common electrode are not shown. An example of the laminated structure of the light-shielding layer and the colored light-transmissive resin layer is shown in FIG. 17. FIGS. 17(A) and 17(B) show that an element layer 203 is formed on a first substrate 200 which is an element substrate, and an interlayer film 209 is formed on the element layer 203. The interlayer film 209 includes colored light-transmissive resin layers 204a, 204b, 204c and light-shielding layers 205a, 205b, 205c, 205d, and the light-shielding layers 205a, 205b, 205c, 205d are respectively formed between the colored light-transmissive resin layers 204a, 204b, 204c. Note that in FIGS. 17(A) and 17(B), the included pixel electrode layer and common electrode are not shown. An example of the laminated structure of the light-shielding layer and the colored light-transmissive resin layer is shown in FIG. 17. FIGS. 17(A) and 17(B) show that an element layer 203 is formed on a first substrate 200 which is an element substrate, and an interlayer film 209 is formed on the element layer 203. The interlayer film 209 includes colored light-transmissive resin layers 204a, 204b, 204c and light-shielding layers 205a, 205b, 205c, 205d, and the light-shielding layers 205a, 205b, 205c, 205d are respectively formed between the colored light-transmissive resin layers 204a, 204b, 204c. Note that in FIGS. 17(A) and 17(B), the included pixel electrode layer and common electrode are not shown. An example of the laminated structure of the light-shielding layer and the colored light-transmissive resin layer is shown in FIG. 17. FIGS. 17(A) and 17(B) show that an element layer 203 is formed on a first substrate 200 which is an element substrate, and an interlayer film 209 is formed on the element layer 203. The interlayer film 209 includes colored light-transmissive resin layers 204a, 204b, 204c and light-shielding layers 205a, 205b, 205c, 205d, and the light-shielding layers 205a, 205b, 205c, 205d are respectively formed between the colored light-transmissive resin layers 204a, 204b, 204c. Note that in FIGS. 17(A) and 17(B), the included pixel electrode layer and common electrode are not shown. An example of the laminated structure of the light-shielding layer and the colored light-transmissive resin layer is shown in FIG. 17. FIGS. 17(A) and 17(B) show that an element layer 203 is formed on a first substrate 200 which is an element substrate, and an interlayer film 209 is formed on the element layer 203. The interlayer film 209 includes colored light-transmissive resin layers 204a, 204b, 204c and light-shielding layers 205a, 205b, 205c, 205d, and the light-shielding layers 205a, 205b, 205c, 205d are respectively formed between the colored light-transmissive resin layers 204a, 204b, 204c. Note that in FIGS. 17(A) and 17(B), the included pixel electrode layer and common electrode are not shown. Layers are omitted.

[0132] A plurality of chromatic colors can be used. For example, in the liquid crystal display device shown in FIG. The light-transmitting resin layer 204a is red, the light-transmitting resin layer 204b is green, and the light-transmitting resin layer 204b is a chromatic color. The layer 204c is a blue colored layer, and a light-transmitting resin layer of a plurality of chromatic colors is used.

[0133] In Fig. 17(A) and (B), a thin film having a thickness smaller than that of the chromatic transparent resin layer is used as the light-shielding layer. This is an example in which a light-shielding layer is laminated above or below a chromatic light-transmitting resin layer. As the light shielding layer, a thin inorganic film (for example, a metal film) having a light shielding property is preferable.

[0134] FIG. 17A shows a structure in which thin light-shielding layers 205a, 205b, 205c, and 205 d are formed, and a chromatic transparent resin is formed on the light-shielding layers 205a, 205b, 205c, and 205d. The layers 204a, 204b, and 204c are laminated. Chromatic colored light-transmitting resin layers 204a, 204b, and 204c are formed on the substrate 03. Thin light-shielding layers 205a, 205b, and 205c are formed on the conductive resin layers 204a, 204b, and 204c. , 205d are laminated on the light-shielding layers 205a, 205b, 205c, and 205d. As shown in FIG. 17B, the element layer, the light-shielding layer, the photoresist layer, and the insulating film 211 are formed. The colored light-transmitting resin layers may be directly laminated, or insulating films may be provided above, below, and between each of them. The structure may be such that

[0135] The sealing materials 202a and 202b are typically of visible light curing, ultraviolet light curing or heat curing. It is preferable to use a curable resin. Representative examples include acrylic resin, epoxy resin, and amine resin. Resins and the like can be used. Further, it may contain a photo (typically ultraviolet ray) polymerization initiator, a thermosetting agent, a filler, and a coupling agent.

[0136] When the light-shielding layer is provided in this way, the light-shielding layer can block the incidence of light on the semiconductor layer 403 of the thin film transistor without reducing the aperture ratio of the pixel, and can obtain the effect of preventing and stabilizing the fluctuation of the electrical characteristics of the thin film transistor due to the photosensitivity of the oxide semiconductor. Further, since the light-shielding layer can also prevent light leakage to adjacent pixels, it becomes possible to perform a display with higher contrast and higher precision. Therefore, high definition and high reliability of the liquid crystal display device can be achieved.

[0137] In addition, the colored light-transmitting resin layer 417 can function as a color filter layer. When the color filter layer is provided on the counter substrate side, it is difficult to accurately align the pixel regions with the element substrate on which the thin film transistor is formed, and there is a risk of deteriorating the image quality. However, since the colored light-transmitting resin layer 417 contained in the interlayer film is directly formed on the element substrate side as the color filter layer, more precise control of the formation region can be achieved, and it can also correspond to pixels with fine patterns. Moreover, since the interlayer film and the color filter layer are made of the same insulating layer, the process is simplified and the liquid crystal display device can be manufactured at a lower cost.

[0138] By improving the contrast and viewing angle characteristics, a liquid crystal display device with higher image quality can be provided. In addition, the liquid crystal display device can be manufactured at a lower cost and with higher productivity.

[0139] In addition, the characteristics of the thin film transistor can be stabilized and the reliability of the liquid crystal display device can be improved. ​​​​​​​​​​​​​

[0140] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0141] (Embodiment 6) In Embodiments 1 to 5, other examples of thin film transistors applicable to a liquid crystal display device are shown. For those similar to Embodiments 1 to 5, the same materials and manufacturing methods can be applied, and detailed descriptions of the same parts or parts having the same functions are omitted.

[0142] An example of a liquid crystal display device having a thin film transistor in which a source electrode layer, a drain electrode layer, and a semiconductor layer are in contact without an intervening n+ layer is shown in FIG. 10.

[0143] FIG. 10(A) is a plan view of a liquid crystal display device showing the pixels for one pixel. FIG. 10(B) is a cross-sectional view taken along line V1-V2 in FIG. 10(A).

[0144] In the plan view of FIG. 10(A), as in Embodiment 1, a plurality of source wiring layers (including wiring layer 405a) are arranged parallel to each other (extending in the vertical direction in the figure) and spaced apart from each other. A plurality of gate wiring layers (including gate electrode layer 401) extend in a direction substantially orthogonal to the source wiring layer (in the left-right direction in the figure) and are arranged so as to be spaced apart from each other. The common wiring layer (common electrode layer) is arranged at a position adjacent to each of the plurality of gate wiring layers, and extends in a direction substantially parallel to the gate wiring layer, that is, in a direction substantially orthogonal to the source wiring layer (in the left-right direction in the figure). By the source wiring layer, the common wiring layer (common electrode layer), and the gate wiring layer, a substantially rectangular space is surrounded, and in this space, the pixel electrode layer and the common of the liquid crystal display device are provided. ​​​​​​The conductive electrode layer is disposed. The thin film transistor 422 for driving the pixel electrode layer is disposed at the upper left corner in the figure. A plurality of pixel electrode layers and thin film transistors are arranged in a matrix.

[0145] In the liquid crystal display device of FIG. 10, the second electrode layer 446 electrically connected to the thin film transistor 422 functions as a pixel electrode layer, and the first electrode layer 447 electrically connected to the common wiring layer functions as a common electrode layer. As shown in FIG. 10, the first electrode layer 447 also serves as a common wiring layer in the pixel, and adjacent pixels are electrically connected by the common electrode layer 409. Note that a capacitance is formed by the pixel electrode layer and the common electrode layer.

[0146] The first substrate 441 provided with the thin film transistor 422, the interlayer film 413 which is a colored light-transmitting resin layer, the first electrode layer 447, and the second electrode layer 446 are fixed with the liquid crystal layer 444 sandwiched therebetween and the second substrate 442.

[0147] The thin film transistor 422 has a structure in which the wiring layers 405a and 405b functioning as a source electrode layer and a drain electrode layer are in contact with the semiconductor layer 403 without an n+ layer therebetween.

[0148] When the colored light-transmitting resin layer 417 of the colored light-transmitting resin layer 413 provided on the thin film transistor 422 is used as the coloring layer, the intensity of light incident on the semiconductor layer 403 of the thin film transistor 422 can be attenuated without reducing the aperture ratio of the pixel, and the electrical characteristics of the thin film transistor 422 due to the photosensitivity of the oxide semiconductor can be obtained. The effect of preventing fluctuations and stabilizing can be obtained. Further, the colored light-transmitting resin layer 417 can function as a color filter layer. Color f ​​​​​​​​​​​​When the filter layer is provided on the opposing substrate, it is necessary to precisely match the element substrate on which the thin film transistor is formed. Although it is difficult to align the pixel area properly and there is a risk of impairing image quality, Since the pattern is formed directly on the element substrate, the formation area can be controlled more precisely, and fine patterns can be formed. In addition, the interlayer film and the color filter layer can be made of the same insulating layer. This simplifies the manufacturing process and enables the liquid crystal display device to be manufactured at a lower cost.

[0149] By improving contrast and viewing angle characteristics and enabling high-speed response, higher image quality and performance are achieved. It is also possible to provide a liquid crystal display device which can be produced at a lower cost. It can be produced with good efficiency.

[0150] In addition, the characteristics of the thin film transistor can be stabilized, and the reliability of the liquid crystal display device can be improved. Cut.

[0151] This embodiment mode can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0152] (Embodiment 7) In the first to fifth embodiments, another example of a thin film transistor applicable to a liquid crystal display device is as follows: This will be explained using FIG.

[0153] FIG. 9(A) is a plan view of a liquid crystal display device, showing one pixel. FIG. 9(B) shows 9(A) is a cross-sectional view taken along line Z1-Z2 of FIG.

[0154] In the plan view of FIG. 9A, similarly to the first embodiment, a plurality of source wiring layers (wiring layer 4 05a) are arranged parallel to each other (extending in the vertical direction in the figure) and spaced apart from each other. are present. The plurality of gate wiring layers (including the gate electrode layer 401) extend in a direction substantially orthogonal to the source wiring layer (the left - right direction in the figure) and are arranged so as to be spaced apart from each other. The common wiring layer (common electrode layer) is arranged at a position adjacent to each of the plurality of gate wiring layers and extends in a direction substantially parallel to the gate wiring layer, that is, in a direction substantially orthogonal to the source wiring layer (the left - right direction in the figure) . The source wiring layer, the common wiring layer (common electrode layer), and the gate wiring layer surround a substantially rectangular space, and in this space, the pixel electrode layer and the common electrode layer of the liquid crystal display device are arranged. The thin - film transistor 421 for driving the pixel electrode layer is arranged at the upper - left corner in the figure. A plurality of pixel electrode layers and thin - film transistors are arranged in a matrix . In the liquid crystal display device of FIG. 9, the second electrode layer 446 electrically connected to the thin - film transistor 421 functions as the pixel electrode layer, and the first electrode layer 447 electrically connected to the common wiring layer functions as the common electrode layer. As shown in FIG. 9, the first electrode layer 447 also serves as the common wiring layer in the pixel, and adjacent pixels are electrically connected by the common electrode layer 409 . A capacitance is formed by the pixel electrode layer and the common electrode layer

[0155] . . The first substrate 441 provided with the thin - film transistor 421, the interlayer film 413 which is a colored light - transmissive resin layer, the first electrode layer 44 7, and the second electrode layer 446, and the second substrate 442 are fixed with the liquid crystal layer 444 sandwiched therebetween . .

[0156] The thin - film transistor 421 is a bottom - gate type thin - film transistor and has an insulating surface .

[0157] . ​On a first substrate 441 serving as a substrate, a gate electrode layer 401, a gate insulating layer 402, wiring layers 405a and 405b functioning as a source electrode layer or a drain electrode layer, an n layer 404a and 404b functioning as a source region or a drain region, and a semiconductor layer 403 are included. Also, an insulating film 407 covering the thin film transistor 421 and in contact with the semiconductor layer 403 is provided. + The semiconductor layer 403 and the n layers 404a and 404b are made of an In-Ga-Zn-O-based polycrystalline film. The thin film transistor 421 having such a structure can obtain characteristics with a mobility of 20 cm + / Vs or more and an S value of 0.4 V / dec or less. Therefore, high-speed operation is possible, and a driving circuit (source driver or gate driver) such as a shift register can be formed on the same substrate as the pixel portion. It is preferable to perform reverse sputtering in which argon gas is introduced into the gate insulating layer 402 and the wiring layers 405a and 405b to generate plasma to remove dust adhering to the surface before forming the semiconductor layer 403 by sputtering. 2 / Vs or more, an S value of 0.4 V / dec or less can be obtained. Thus, high-speed operation becomes possible, and a driving circuit (source driver or gate driver) such as a shift register can be formed on the same substrate as the pixel portion. It is preferable to perform heat treatment on the semiconductor layer 403 and the n layers 404a and 404b at 200°C to 600°C, typically 30

[0158] It is preferable to perform heat treatment on the semiconductor layer 403 and the n layers 404a and 404b at 200°C to 600°C, typically 300°C to 500°C. For example, heat treatment is performed at 350°C for 1 hour in a nitrogen atmosphere. The timing of performing this heat treatment is not particularly limited as long as it is after forming the oxide semiconductor film used for the semiconductor layer 403 and the n layers 404a and 404b.

[0159] It is also possible to perform oxygen radical treatment on the semiconductor layer 403. + layers 404a and 404b at 200°C to 600°C, typically 300°C to 500°C. For example, heat treatment is performed at 350°C for 1 hour in a nitrogen atmosphere. The timing of performing this heat treatment is not particularly limited as long as it is after forming the oxide semiconductor film used for the semiconductor layer 403 and the n layers 404a and 404b. layers 404a and 404 + layers 404a and 404b. b.

[0160] Also, oxygen radical treatment may be performed on the semiconductor layer 403.

[0161] The thin film transistor 421 has a gate insulating layer in the entire region including the thin film transistor 421. A first substrate 441, which is a substrate having a gate insulating layer 402 and an insulating surface, on which the layer 402 is present. A gate electrode layer 401 is provided between the gate insulating layer 402 and the wiring layer 405a. , 405b, and n + Layers 404a and 404b are provided. 02, wiring layers 405a, 405b, and n + A semiconductor layer 403 is formed on the layers 404a and 404b. Although not shown, wiring layers 405a and 405b are provided on the gate insulating layer 402. In addition to the semiconductor layer 5b, a wiring layer is provided, and the wiring layer extends outward from the outer periphery of the semiconductor layer 403. .

[0162] As the interlayer film 413 provided on the thin film transistor 421, a chromatic light-transmitting resin layer 417 By using a colored layer, the semiconductor of the thin film transistor 421 can be increased without decreasing the aperture ratio of the pixel. The intensity of light incident on the layer 403 can be attenuated, and the thin film due to the photosensitivity of the oxide semiconductor can be This has the effect of preventing fluctuations in the electrical characteristics of the transistor 421 and stabilizing them. The light-transmitting resin layer 417 can function as a color filter layer. When a filter layer is provided on the opposing substrate, it is necessary to accurately Although it is difficult to align the pixel area and there is a risk of impairing image quality, the interlayer film is Since the pattern is formed directly on the element substrate, more precise control of the formation area is possible, and fine patterns can be formed. It can also be used for pixels. In addition, the interlayer film and the color filter layer can be made of the same insulating layer. Therefore, the process is simplified and the liquid crystal display device can be manufactured at a lower cost.

[0163] By improving contrast and viewing angle characteristics, a higher-quality liquid crystal display device can be provided. In addition, the liquid crystal display device can be manufactured at a lower cost and with higher productivity.

[0164] Also, the characteristics of the thin-film transistor can be stabilized and the reliability of the liquid crystal display device can be improved. can be achieved.

[0165] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. is.

[0166] (Embodiment 8) In Embodiments 1 to 5, other examples of thin-film transistors applicable to a liquid crystal display device are shown. For those similar to Embodiments 1 to 5, the same materials and manufacturing methods can be applied, and detailed descriptions of the same parts or parts having the same functions are omitted. can be.

[0167] An example of a liquid crystal display device having a thin-film transistor in which a source electrode layer, a drain electrode layer, and a semiconductor layer are in contact without an n + layer is shown in FIG. 11. between them is shown in FIG. 11.

[0168] FIG. 11(A) is a plan view of the liquid crystal display device showing one pixel. FIG. 11(B) is a cross-sectional view taken along line Y1-Y2 in FIG. 11(A).

[0169] In the plan view of FIG. 11(A), similar to Embodiment 1, a plurality of source wiring layers (including wiring layer 405a) are arranged parallel to each other (extending in the vertical direction in the figure) and spaced apart from each other. A plurality of gate wiring layers (including gate electrode layer 401) extend in a direction substantially orthogonal to the source wiring layer (the left-right direction in the figure) and are arranged so as to be spaced apart from each other. The common wiring extends in a direction substantially orthogonal to the source wiring layer (the left-right direction in the figure) and is arranged so as to be spaced apart from each other. The common wiring The line layer (common electrode layer) is disposed at a position adjacent to each of the plurality of gate wiring layers. It extends in a direction substantially parallel to the gate wiring layer, that is, in a direction substantially orthogonal to the source wiring layer (left - right direction in the figure). By the source wiring layer, the common wiring layer (common electrode layer), and the gate wiring layer, a substantially rectangular space is surrounded. In this space, the pixel electrode layer and the common electrode layer of the liquid crystal display device are disposed. The thin - film transistor 423 for driving the pixel electrode layer is disposed at the upper - left corner in the figure. A plurality of pixel electrode layers and thin - film transistors are arranged in a matrix.

[0170] In the liquid crystal display device of FIG. 11, the second electrode layer 446 electrically connected to the thin - film transistor 423 functions as the pixel electrode layer, and the first electrode layer 447 electrically connected to the common wiring layer functions as the common electrode layer. As shown in FIG. 11, the first electrode layer 447 also serves as the common wiring layer in the pixel, and adjacent pixels are electrically connected by the common electrode layer 409. Note that a capacitance is formed by the pixel electrode layer and the common electrode layer.

[0171] The first substrate 441 provided with the thin - film transistor 423, the interlayer film 413 which is a colored light - transmissive resin layer, the first electrode layer 44 7, and the second electrode layer 446, and the second substrate 442 are fixed with the liquid crystal layer 444 sandwiched therebetween.

[0172] The gate insulating layer 402 exists in all regions including the thin - film transistor 423, and the gate electrode layer 401 is provided between the gate insulating layer 402 and the first substrate 441 which is a substrate having an insulating surface. On the gate insulating layer 402, the wiring layer 405a , 405b is provided. And a gate insulating layer 402, wiring layers 405a, 405b A semiconductor layer 403 is provided thereon. Although not shown, on the gate insulating layer 402 In addition to the wiring layers 455a, 455b, it has a wiring layer, and the wiring layer extends outside the outer peripheral portion of the semiconductor layer 403 more outwardly.

[0173] As the interlayer film 413 provided on the thin film transistor 423, when using the colored light-transmissive resin layer 417 coloring layer, it is possible to attenuate the intensity of light incident on the semiconductor layer 403 of the thin film transistor 423 without reducing the aperture ratio of the pixel, and to obtain the effect of preventing and stabilizing the variation of the electrical characteristics of the thin film transistor 423 due to the photosensitivity of the oxide semiconductor. Further, the colored light-transmissive resin layer 417 can function as a color filter layer. When the color filter layer is provided on the counter substrate side, it is difficult to accurately align the pixel regions with the element substrate on which the thin film transistor is formed, and there is a risk of deteriorating the image quality. However, since the interlayer film is formed directly on the element substrate side as a color filter layer, more precise control of the formation region can be achieved, and it can also correspond to fine pattern pixels. Also, since the interlayer film and the color filter layer are made of the same insulating layer, the process can be simplified and the liquid crystal display device can be manufactured at a lower cost. By improving the contrast and viewing angle characteristics, a liquid crystal display device with higher image quality can be provided. In addition, the liquid crystal display device can be manufactured with higher productivity at a lower cost. Moreover, the characteristics of the thin film transistor can be stabilized and the reliability of the liquid crystal display device can be improved. Also, it is possible to achieve.

[0174] By improving the contrast and viewing angle characteristics, a liquid crystal display device with higher image quality can be provided. In addition, the liquid crystal display device can be manufactured with higher productivity at a lower cost.

[0175] Also, the characteristics of the thin film transistor can be stabilized and the reliability of the liquid crystal display device can be improved. be achieved.

[0176] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is.

[0177] (Embodiment 9) In the above embodiment, a liquid crystal material showing a blue phase can be used as the liquid crystal layer. A liquid crystal display device using a liquid crystal layer showing a blue phase will be described with reference to FIG. 2.

[0178] FIGS. 2(A) to (D) are cross-sectional views of a liquid crystal display device and a manufacturing process thereof.

[0179] In FIG. 2(A), an element layer 203 is formed on a first substrate 200 which is an element substrate, and an interlayer film 209 is formed on the element layer 203.

[0180] The interlayer film 209 includes colored light-transmissive resin layers 204a, 204b, 204c and light-shielding layers 205 a, 205b, 205c, 205d, and light-shielding layers 205a, 205b, 205c, 205d are respectively formed between the colored light-transmissive resin layers 204a, 204b, 204c. Note that the pixel electrode layer and the common electrode layer included in FIGS. 2(A) to (D) are omitted . For example, the pixel electrode layer and the common electrode layer can use the structures of Embodiments 1 to 8, and a horizontal electric field mode can be applied. For example, the pixel electrode layer and the common electrode layer can use the structures of Embodiments 1 to 8, and a horizontal electric field mode can be applied. It can be used, and a horizontal electric field mode can be applied.

[0181] As shown in FIG. 2(B), the first substrate 200 and a second substrate 201 which is a counter substrate are fixed with sealants 202a, 202b with a liquid crystal layer 206 sandwiched therebetween. As a method of forming the liquid crystal layer 206, a dispenser method (dropping method) or an injection method in which the first substrate 200 and the second substrate 201 are bonded together and then liquid crystal is injected using capillary action can be used. It can be used, and a dispenser method (dropping method) or an injection method in which the first substrate 200 and the second substrate 201 are bonded together and then liquid crystal is injected using capillary action can be used.

[0182] For the liquid crystal layer 206, a liquid crystal material exhibiting a blue phase can be used. The liquid crystal material has a response speed as short as 1 msec or less, enabling high-speed response, which makes it possible to improve the performance of the liquid crystal display device.

[0183] The liquid crystal material exhibiting a blue phase includes a liquid crystal and a chiral agent. The chiral agent is used to orient the liquid crystal in a helical structure and to develop the blue phase. For example, a liquid crystal material mixed with 5 wt% or more of the chiral agent may be used for the liquid crystal layer.

[0184] As the liquid crystal, a thermotropic liquid crystal, a low molecular liquid crystal, a polymer liquid crystal, a ferroelectric liquid crystal, an antiferroelectric liquid crystal, etc. can be used.

[0185] As the chiral agent, a material with good compatibility with the liquid crystal and strong twisting force is used. Moreover, either the R-form or the S-form material is suitable, and a racemic form with a ratio of R-form to S-form of 50:50 is not used.

[0186] Depending on the conditions, the above liquid crystal material exhibits a cholesteric phase, a cholesteric blue phase, a smectic phase, a smectic blue phase, a cubic phase, a chiral nematic phase, an isotropic phase, etc. .

[0187] The cholesteric blue phase and the smectic blue phase, which are blue phases, are found in liquid crystal materials having a relatively short cholesteric phase or smectic phase with a helical pitch of 500 nm or less. The orientation of the liquid crystal material has a double-twist structure. Since it has an order below the wavelength of visible light, it is transparent, and the orientation order changes due to the application of voltage, resulting in an optical modulation effect. Since the blue phase is optically isotropic, there is no viewing angle dependence, and it is not necessary to form an alignment film.It is possible to improve the image quality and reduce costs. Also, rubbing treatment of the alignment film is not required Therefore, electrostatic breakdown caused by the rubbing treatment can be prevented, and defects and breakage of the liquid crystal display device during the manufacturing process can be reduced. Thus, the productivity of the liquid crystal display device can be improved. In particular, a thin film transistor using an oxide semiconductor layer is significantly affected by static electricity and the electrical characteristics of the thin film transistor vary significantly and deviate from the design range There is a risk. Therefore, it is more effective to use a blue phase liquid crystal material for a liquid crystal display device having a thin film transistor using an oxide semiconductor layer.

[0188] Also, the blue phase is difficult to appear only in a narrow temperature range. In order to widely improve the temperature range, it is preferable to add a photocurable resin and a photoinitiator to the liquid crystal material and perform a polymer stabilization treatment. The polymer stabilization treatment is performed by irradiating light having a wavelength at which the photocurable resin and the photoinitiator react to a liquid crystal material containing a liquid crystal, a chiral agent, a photocurable resin, and a photoinitiator. This polymer stabilization treatment may be performed by irradiating light to a liquid crystal material showing an isotropic phase, or may be performed by irradiating light to a liquid crystal material in which the blue phase is developed by controlling the temperature. For example, the temperature of the liquid crystal layer is controlled, and the polymer stabilization treatment is performed by irradiating light to the liquid crystal layer in a state where the blue phase is developed. However, it is not limited to this, and the polymer stabilization treatment may be performed by irradiating light to the liquid crystal layer in a state where an isotropic phase within +10 °C, preferably within +5 °C from the phase transition temperature between the blue phase and the isotropic phase is developed. The phase transition temperature between the blue phase and the isotropic phase refers to the temperature at which the blue phase transitions to the isotropic phase during heating or the temperature at which the isotropic phase transitions to the blue phase during cooling. One of the polymer stabilization treatments is not limited thereto, and the polymer stabilization treatment may be performed by irradiating light to the liquid crystal layer in a state where an isotropic phase within +10 °C, preferably within +5 °C from the phase transition temperature between the blue phase and the isotropic phase is developed. The phase transition temperature between the blue phase and the isotropic phase refers to the temperature at which the blue phase transitions to the isotropic phase during heating or the temperature at which the isotropic phase transitions to the blue phase during cooling. The phase transition temperature between the blue phase and the isotropic phase means the temperature at which the blue phase transitions to the isotropic phase during heating or the temperature at which the isotropic phase transitions to the blue phase during cooling. The polymer stabilization treatment is one ​​For example, after heating the liquid crystal layer to the isotropic phase, the temperature can be gradually decreased to cause a phase transition to the blue phase, and light can be irradiated while maintaining the temperature at which the blue phase appears. Alternatively, after gradually heating the liquid crystal layer to cause a phase transition to the isotropic phase, light can be irradiated within +10 °C, preferably within +5 °C, from the phase transition temperature between the blue phase and the isotropic phase (in a state where the isotropic phase appears). Also, when using an ultraviolet curable resin (UV curable resin) as the photocurable resin contained in the liquid crystal material, the liquid crystal layer may be irradiated with ultraviolet light. Note that even without causing the blue phase to appear, if a polymer stabilization treatment is performed by irradiating light within +10 °C, preferably within +5 °C, from the phase transition temperature between the blue phase and the isotropic phase (in a state where the isotropic phase appears), a response speed of 1 msec or less can be achieved, enabling a short and high-speed response. The photocurable resin may be a monofunctional monomer such as acrylate or methacrylate, a polyfunctional monomer such as diacrylate, triacrylate, dimethacrylate, or trimethacrylate, or a mixture thereof. Also, it may be liquid crystalline or non-liquid crystalline, or a mixture of both. The photocurable resin may be selected as a resin that cures with light having a wavelength at which the used photoinitiator reacts. Typically, an ultraviolet curable resin can be used. The photoinitiator may be a radical polymerization initiator that generates radicals upon light irradiation, an acid generator that generates an acid, or a base generator that generates a base. Specifically, as the liquid crystal material, a mixture of JC-1041XX (manufactured by Chisso Corporation) and 4-cyano-4'-pentylbiphenyl can be used, and as the chiral agent, ZLI-

[0189]

[0190]

[0191] ​ 4572 (manufactured by Merck KGaA) can be used, and the photocurable resin can be 2-ethylhexyl acrylate, RM257 (manufactured by Merck KGaA), and trimethylolpropane triacrylate can be used, and as the photoinitiator, 2,2-dimethoxy-2-phenylacetophenone can be used.

[0192] The liquid crystal layer 206 is formed using a liquid crystal material containing liquid crystal, chiral agent, photocurable resin, and photoinitiator.

[0193] As shown in FIG. 2(C), the liquid crystal layer 206 is irradiated with light 207 to perform a polymer stabilization treatment, and the liquid crystal layer 208 is formed. The light 207 is light having a wavelength at which the photocurable resin and photoinitiator contained in the liquid crystal layer 206 react. By this polymer stabilization treatment by light irradiation, the temperature range in which the liquid crystal layer 208 exhibits a blue phase can be widely improved.

[0194] When a photocurable resin such as ultraviolet light is used for the sealant and the liquid crystal layer is formed by the dropping method, etc., the sealant may also be cured by the light irradiation step of the polymer stabilization treatment.

[0195] In the configuration of a liquid crystal display device in which a color filter layer and a light shielding layer are formed on an element substrate as shown in FIG. 2, since the light irradiated from the counter substrate side is not absorbed or blocked by the color filter layer and the light shielding layer, the entire liquid crystal layer can be irradiated uniformly. Therefore, it is possible to prevent the alignment disorder of the liquid crystal due to non-uniformity of photopolymerization and the accompanying display unevenness. Also, since the thin film transistor is shielded by the light shielding layer, its electrical characteristics remain stable.

[0196] ​​​As shown in FIG. 2(D), a polarizing plate 2 10a is provided on the outside of the first substrate 200 (opposite to the liquid crystal layer 208), and a polarizing plate 210b is provided on the outside of the second substrate 201 (opposite to the liquid crystal layer 208). In addition to the polarizing plate, optical films such as a retardation plate and an antireflection film may be provided. For example, circular polarization by a polarizing plate and a retardation plate may be used. With the above steps, a liquid crystal display device can be completed.

[0197] Also, when manufacturing a plurality of liquid crystal display devices using a large substrate (so-called multi-face taking), the cutting process can be performed before the polymer stabilization treatment or before providing the polarizing plate. Considering the influence on the liquid crystal layer due to the cutting process (such as orientation disorder caused by the force applied during the cutting process), it is preferable to perform the cutting process after bonding the first substrate and the second substrate and before the polymer stabilization treatment. Considering the influence on the liquid crystal layer due to the cutting process (such as orientation disorder caused by the force applied during the cutting process), it is preferable to perform the cutting process after bonding the first substrate and the second substrate and before the polymer stabilization treatment. After bonding the first substrate and the second substrate and before the polymer stabilization treatment is preferable.

[0198] Although not shown, a backlight, a side light, etc. may be used as the light source. The light source is irradiated from the side of the first substrate 200, which is the element substrate, so as to transmit to the second substrate 201, which is the viewing side. From the side of the first substrate 200, which is the element substrate, so as to transmit to the second substrate 201, which is the viewing side. Irradiated.

[0199] By improving the contrast and viewing angle characteristics and enabling high-speed response, a liquid crystal display device with higher image quality and higher performance can be provided. Also, the liquid crystal display device can be manufactured with better productivity at a lower cost. Can be manufactured with better productivity at a lower cost.

[0200] Also, the characteristics of the thin film transistor can be stabilized and the reliability of the liquid crystal display device can be improved. Can be achieved.

[0201] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. Is possible.

[0202] (Embodiment 10) A thin film transistor can be fabricated, and the thin film transistor can be used in a pixel portion and further in a driving circuit to fabricate a liquid crystal display device having the indicated functions. Also, a part or all of the driving circuit of the thin film transistor can be integrally formed on the same substrate as the pixel portion to form a system-on-panel. The liquid crystal display device includes a liquid crystal element (also referred to as a liquid crystal display element) as a display element. Further, the liquid crystal display device includes a panel in a state where the display element is sealed, and a module in a state where an IC including a controller and the like is mounted on the panel. Furthermore, regarding the element substrate corresponding to a form before the display element is completed in the process of fabricating the liquid crystal display device, the element substrate includes means for supplying current to the display element in each of a plurality of pixels. Specifically, the element substrate may be in a state where only the pixel electrode of the display element is formed, or may be in a state after a conductive film serving as the pixel electrode is formed and before etching to form the pixel electrode, and any form applies. In addition, the liquid crystal display device in this specification refers to an image display device, a display device, or a light source (including a lighting device). Also, a module to which a connector, for example, an FPC (Flexible printed circuit) or a TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is attached, a module in which a printed wiring board is provided at the tip of the TAB tape or the TCP, or an IC (integrated circuit) is mounted on the display element by the COG (Chip On Glass) method

[0203] The liquid crystal display device includes a liquid crystal element (also referred to as a liquid crystal display element) as a display element.

[0204] Also, the liquid crystal display device includes a panel in a state where the display element is sealed, and a module in a state where an IC including a controller and the like is mounted on the panel. Furthermore, regarding the element substrate corresponding to a form before the display element is completed in the process of fabricating the liquid crystal display device, the element substrate includes means for supplying current to the display element in each of a plurality of pixels. The element substrate may specifically be in a state where only the pixel electrode of the display element is formed, or may be in a state after a conductive film serving as the pixel electrode is formed and before etching to form the pixel electrode, and any form applies. In addition, the liquid crystal display device in this specification refers to an image display device, a display device, or a light source (including a lighting device). Also, a module to which a connector, for example, an FPC (Flexible printed circuit) or a TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is attached, a module in which a printed wiring board is provided at the tip of the TAB tape or the TCP, or an IC (integrated circuit) is mounted on the display element by the COG (Chip On Glass) method In the process of manufacturing the liquid crystal display device, regarding the element substrate corresponding to a form before the display element is completed, the element substrate is provided with means for supplying current to the display element in each of a plurality of pixels. The element substrate may specifically be in a state where only the pixel electrode of the display element is formed, or may be in a state after a conductive film serving as the pixel electrode is formed and before etching to form the pixel electrode, and any form applies. Moreover, the liquid crystal display device in this specification refers to an image display device, a display device, or a light source (including a lighting device). Also, a module to which a connector, for example, an FPC (Flexible printed circuit) or a TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is attached, a module in which a printed wiring board is provided at the tip of the TAB tape or the TCP, or an IC (integrated circuit) is mounted on the display element by the COG (Chip On Glass) method Specifically, the element substrate may be in a state where only the pixel electrode of the display element is formed, or may be in a state after a conductive film serving as the pixel electrode is formed and before etching to form the pixel electrode, and any form applies. Furthermore, the liquid crystal display device in this specification refers to an image display device, a display device, or a light source (including a lighting device). Also, a module to which a connector, for example, an FPC (Flexible printed circuit) or a TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is attached, a module in which a printed wiring board is provided at the tip of the TAB tape or the TCP, or an IC (integrated circuit) is mounted on the display element by the COG (Chip On Glass) method In addition, the liquid crystal display device in this specification refers to an image display device, a display device, or a light source (including a lighting device). Also, a module to which a connector, for example, an FPC (Flexible printed circuit) or a TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is attached, a module in which a printed wiring board is provided at the tip of the TAB tape or the TCP, or an IC (integrated circuit) is mounted on the display element by the COG (Chip On Glass) method

[0205] Note that the liquid crystal display device in this specification refers to an image display device, a display device, or a light source (including a lighting device). Also, a module to which a connector, for example, an FPC (Flexible printed circuit) or a TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is attached, a module in which a printed wiring board is provided at the tip of the TAB tape or the TCP, or an IC (integrated circuit) is mounted on the display element by the COG (Chip On Glass) method In addition, the liquid crystal display device in this specification refers to an image display device, a display device, or a light source (including a lighting device). Also, a module to which a connector, for example, an FPC (Flexible printed circuit) or a TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is attached, a module in which a printed wiring board is provided at the tip of the TAB tape or the TCP, or an IC (integrated circuit) is mounted on the display element by the COG (Chip On Glass) method printed circuit) or a TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is attached, a module in which a printed wiring board is provided at the tip of the TAB tape or the TCP, or an IC (integrated circuit) is mounted on the display element by the COG (Chip On Glass) method onding) tape or a TCP (Tape Carrier Package) is attached, a module in which a printed wiring board is provided at the tip of the TAB tape or the TCP, or an IC (integrated circuit) is mounted on the display element by the COG (Chip On Glass) method A module to which a connector, for example, an FPC (Flexible printed circuit) or a TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is attached, a module in which a printed wiring board is provided at the tip of the TAB tape or the TCP, or an IC (integrated circuit) is mounted on the display element by the COG (Chip On Glass) method A module to which a printed wiring board is provided at the tip of the TAB tape or the TCP, or an IC (integrated circuit) is mounted on the display element by the COG (Chip On Glass) method Modules with directly implemented integrated circuits are also all included in the liquid crystal display device.

[0206] The appearance and cross-section of a liquid crystal display panel corresponding to one form of the liquid crystal display device will be described with reference to FIG. 12. FIGS. 12(A1) and (A2) are top views of a panel in which reliable thin film transistors 4010, 4011, and liquid crystal elements 4013 including an oxide semiconductor film formed on a first substrate 4001 as a semiconductor layer are sealed with a sealing material 4005 between the second substrate 4006. FIG. 12(B) corresponds to a cross-sectional view taken along M-N in FIGS. 12(A1) and (A2). The sealing material 4005 is provided so as to surround the pixel portion 4002 and the scanning line driving circuit 4004 provided on the first substrate 4001. Also, a second substrate 4006 is provided on the pixel portion 4002 and the scanning line driving circuit 4004. Therefore, the pixel portion 4002 and the scanning line driving circuit 4004 are sealed together with the liquid crystal layer 4008 by the first substrate 4001, the sealing material 4005, and the second substrate 4006.

[0207]

[0208] Also, FIG. 12(A1) shows a signal line driving circuit 4003 formed of a single crystal semiconductor film or a polycrystalline semiconductor film on a separately prepared substrate in a region different from the region surrounded by the sealing material 4005 on the first substrate 4001. Note that FIG. 12(A2) is an example in which a part of the signal line driving circuit is formed of a thin film transistor using an oxide semiconductor on the first substrate 4001. The signal line driving circuit 4003b is formed on the first substrate 4001, and the signal line driving circuit 4003a formed of a single crystal semiconductor film or a polycrystalline semiconductor film on a separately prepared substrate is mounted. ​​​​​​​​​​​​​​

[0209] Note that the connection method of the separately formed drive circuit is not particularly limited, and the COG method, the wire bonding method, or the TAB method, etc. can be used. Fig. 12(A1) is an example of implementing the signal line drive circuit 4003 by the COG method, and Fig. 12(A2) is an example of implementing the signal line drive circuit 4003 by the TAB method.

[0210] Also, the pixel portion 4002 provided on the first substrate 4001 and the scanning line drive circuit 4004 have a plurality of thin film transistors. In Fig. 12(B), the thin film transistor 4010 included in the pixel portion 4002 and the thin film transistor 4011 included in the scanning line drive circuit 4004 are illustrated. An insulating layer 4020 and an interlayer film 4021 are provided on the thin film transistors 4010 and 4011.

[0211] The thin film transistors 4010 and 4011 can be applied with highly reliable thin film transistors including the oxide semiconductor film shown in Embodiments 1 to 8 as the semiconductor layer. The thin film trans istors 4010 and 4011 are n-channel type thin film transistors.

[0212] Also, a pixel electrode layer 4030 and a common electrode layer 4031 are provided on the first substrate 4001, and the pixel electrode layer 4030 is electrically connected to the thin film transistor 4010. The liquid crystal element 4013 includes the pixel electrode layer 4030, the common electrode layer 4031, and the liquid crystal layer 4008. Note that polarizing plates 4032 and 40 33 are provided outside the first substrate 4001 and the second substrate 4006, respectively.

[0213] Note that as the first substrate 4001 and the second substrate 4006, glass or plastic having translucency​ A stick or the like can be used. As the plastic, an FRP (Fibergla ss-Reinforced Plastics) plate, a PVF (polyvinyl fluoride ) film, a polyester film or an acrylic resin film can be used. In addition, a sheet having a structure in which an aluminum foil is sandwiched between a PVF film and a polyester film can also be used.

[0214] Also, 4035 is a columnar spacer obtained by selectively etching an insulating film, and is provided to control the film thickness (cell gap) of the liquid crystal layer 4008. Note that a spherical spacer may be used. Note that, in a liquid crystal display device using the liquid crystal layer 4008, it is preferable that the film thickness (cell gap) of the liquid crystal layer 4008 be about 5 μm or more and 20 μm or less.

[0215] Note that FIG. 12 shows an example of a transmissive liquid crystal display device, but it can also be applied to a transflective liquid crystal display device.

[0216] In addition, in the liquid crystal display device of FIG. 12, an example is shown in which a polarizing plate is provided on the outer side (viewing side) of the substrate. However, the polarizing plate may be provided on the inner side of the substrate. It may be appropriately set according to the material of the polarizing plate and the manufacturing process conditions. Further, a light-shielding layer that functions as a black matrix may be provided.

[0217] The interlayer film 4021 is a colored light-transmissive resin layer and functions as a color filter layer. Further, a part of the interlayer film 4021 may be used as a light-shielding layer. In FIG. 12, a light-shielding layer 4034 is provided on the second substrate 4006 side so as to cover the upper sides of the thin film transistors 4010 and 4011. By providing the light-shielding layer 4034, the effect of further improving the contrast and stabilizing the thin film transistor can be enhanced. ​

[0218] As the interlayer film 4021 provided on the thin film transistor, a colored layer of a colored translucent resin layer is used. If so, the intensity of light incident on the semiconductor layer of the thin film transistor can be attenuated without reducing the aperture ratio of the pixel, and the electrical characteristics of the thin film transistor due to the photosensitivity of the oxide semiconductor can be prevented from fluctuating and stabilized. Further, the colored translucent resin layer can function as a color filter layer. When the color filter layer is provided on the counter substrate side, it is difficult to accurately align the pixel regions with the element substrate on which the thin film transistor is formed, and the image quality may be deteriorated. However, since the interlayer film is formed directly on the element substrate side as the color filter layer, more precise control of the formation region can be achieved, and it is possible to cope with pixels having fine patterns. Also, since the interlayer film and the color filter layer are made of the same insulating layer, the process is simplified and a liquid crystal display device can be manufactured at a lower cost. It may be configured to be covered with the insulating layer 4020 that functions as a protective film for the thin film transistor, but it is not particularly limited. Note that the protective film is for preventing the intrusion of contaminating impurities such as organic substances, metal substances, and water vapor floating in the air, and a dense film is preferable. The protective film may be formed by a single layer or a laminate of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, an aluminum oxynitride film, or an aluminum nitride oxide film using a sputtering method.

[0219] It may be configured to be covered with the insulating layer 4020 that functions as a protective film for the thin film transistor, but it is not particularly limited.

[0220] In addition, the protective film is for preventing the intrusion of contaminating impurities such as organic substances, metal substances, and water vapor floating in the air, and a dense film is preferable. The protective film may be formed by a single layer or a laminate of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, an aluminum oxynitride film, or an aluminum nitride oxide film using a sputtering method. It may be formed by a single layer or a laminate of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, an aluminum oxynitride film, or an aluminum nitride oxide film.

[0221] Also, after forming the protective film, annealing (300°C to 400°C) of the semiconductor layer may be performed.

[0222] Also, when further forming a light-transmissive insulating layer as the planarization insulating film, organic materials having heat resistance such as polyimide, acrylic , benzocyclobutene, polyamide, epoxy, etc. can be used. In addition to the above organic materials, low dielectric constant materials (low-k materials), siloxane-based resins, PSG (phosphosilicate glass), BPSG (borophosphosilicate glass), etc. can also be used. Note that an insulating layer may be formed by laminating a plurality of insulating films formed of these materials.

[0223] The method for forming the laminated insulating layer is not particularly limited, and depending on the material, sputtering method, SOG method , spin coating, dipping, spray coating, droplet discharge method (inkjet method, screen printing, offset printing, etc.), doctor knife, roll coater, curtain coater, knife coater, etc. can be used. When forming the insulating layer using a material solution, annealing of the semiconductor layer (200°C to 400°C) may be performed simultaneously during the baking process. By combining the baking process of the insulating layer and the annealing of the semiconductor layer, it is possible to efficiently manufacture a liquid crystal display device .

[0224] The pixel electrode layer 4030 and the common electrode layer 4031 may be formed of indium oxide containing tungsten oxide , indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide (hereinafter referred to as ITO), indium zinc oxide, indium tin oxide added with silicon oxide, etc., which are light-transmissive conductive materials.

[0225] Also, as the pixel electrode layer 4030 and the common electrode layer 4031, conductive polymers (conductive polymers The conductive composition may be formed using a conductive material containing a conductive film.

[0226] A signal line driver circuit 4003 and a scanning line driver circuit 4004 or a pixel section 4 Various signals and potentials are applied to 002 via FPC4018.

[0227] In addition, since thin-film transistors are easily damaged by static electricity, etc., It is preferable to provide a protection circuit for protecting the driver circuit on the same substrate as the line. is preferably configured using a nonlinear element using an oxide semiconductor.

[0228] In FIG. 12, the connection terminal electrode 4015 is formed from the same conductive film as the pixel electrode layer 4030. The terminal electrode 4016 is a source electrode layer and a drain electrode layer of the thin film transistors 4010 and 4011. It is formed from the same conductive film as the electrode layer.

[0229] The connection terminal electrode 4015 is connected to a terminal of the FPC 4018 via an anisotropic conductive film 4019. The electrodes are electrically connected to each other.

[0230] In FIG. 12, a signal line driver circuit 4003 is formed separately and mounted on a first substrate 4001. However, the present invention is not limited to this configuration. Alternatively, only a part of the signal line driver circuit or a part of the scanning line driver circuit may be formed separately. It may be implemented as follows.

[0231] FIG. 16 shows an example of a liquid crystal display module constituting the liquid crystal display device disclosed in this specification. It shows.

[0232] FIG. 16 shows an example of a liquid crystal display module, in which an element substrate 2600 and an opposing substrate 2601 are sealed. Fixed by the spacer material 2602, and an element layer 2603 including a TFT or the like and a front display element 2604 including a liquid crystal layer are provided therebetween. An interlayer film 2605 including a colored light-transmissive resin layer that functions as a color filter is provided to form a display region. The interlayer film 2605 including the colored light-transmissive resin layer is necessary for performing color display. In the case of the RGB method, colored light-transmissive resin layers corresponding to each of red, green, and blue are provided for each pixel. Polarizing plates 2606, 2607, and a diffusion plate 2613 are disposed outside the element substrate 2600 and the counter substrate 2601. The light source is composed of a cold cathode tube 2610 and a reflector 2611. The circuit board 2612 is connected to the wiring circuit portion 2608 of the element substrate 2600 by a flexible wiring board 2609, and external circuits such as a control circuit and a power supply circuit are incorporated. Also, a white diode may be used as the light source. Further, it may be laminated in a state having a retardation plate between the polarizing plate and the liquid crystal layer. By the above steps, a highly reliable liquid crystal display panel can be manufactured as a liquid crystal display device. This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. (Embodiment 11) The liquid crystal display device disclosed in this specification can be applied to various electronic devices (including gaming machines). Examples of the electronic device include a television device (also referred to as a TV or a television receiver), a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone (also referred to as a mobile phone or a mobile phone device), a portable ... (The text continues, but the content after this seems incomplete in the original Japanese text. The translation is based on the provided text up to this point.) ... ... ...

[0233] ... ...

[0234] ... ...

[0235] (Embodiment 11) The liquid crystal display device disclosed in this specification can be applied to various electronic devices (including gaming machines). Examples of the electronic device include, for example, a television device (also referred to as a TV or a television receiver), a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone (also referred to as a mobile phone or a mobile phone device), a portable ... ... Examples include large game machines such as game consoles, mobile information terminals, audio playback devices, and pachinko machines. and so on.

[0236] FIG. 13(A) shows an example of a television device 9600. The television device 96 00 has a display unit 9603 incorporated in a housing 9601. The display unit 9603 can display images. Here, a configuration in which the housing 9601 is supported by a stand 9605 is shown.

[0237] The operation of the television device 9600 can be performed by operation switches provided in the housing 9601 or by a separate remote control operation unit 9610. With the operation keys 9609 provided on the remote control operation unit 9610, channel and volume operations can be performed, and the images displayed on the display unit 9603 can be operated. Further, the remote control operation unit 9610 may be provided with a display unit 9607 for displaying information output from the remote control operation unit 9610.

[0238] Note that the television device 9600 is configured to include a receiver, a modem, etc. The receiver can receive general television broadcasts, and further, by connecting to a communication network by wire or wirelessly via the modem, one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication is also possible. (between sender and receiver, or between receivers, etc.) information communication is also possible.

[0239] FIG. 13(B) shows an example of a digital photo frame 9700. For example, the digital photo frame 9700 has a display unit 9703 incorporated in a housing 9701. The display unit 9703 can display various images, for example, images taken with a digital camera, etc. ​By displaying the following image data, it can function in the same way as a normal photo frame.

[0240] Note that the digital photo frame 9700 includes an operation unit, external connection terminals (such as USB terminals, various cable connection terminals such as USB cables), a recording medium insertion part, etc. It has a structure that can be connected to various cables such as USB cables). These components may be incorporated on the same surface as the display unit, but it is preferable to provide them on the side or back surface because it improves the design. For example, by inserting a memory storing image data taken with a digital camera into the recording medium insertion part of the digital photo frame, image data can be captured and the captured image data can be displayed on the display unit 9703. Also, the digital photo frame 9700 may be configured to be able to wirelessly transmit and receive information. It can also be configured to capture and display desired image data wirelessly.

[0241] Figure 14(A) shows a portable game machine, which is composed of two housings, a housing 9881 and a housing 9891, and is connected by a connecting part 9893 so as to be openable and closable. A display unit 9882 is incorporated in the housing 9881, and a display unit 9883 is incorporated in the housing 9891.

[0242] In addition, the portable game machine shown in Figure 14(A) also includes a speaker unit 9884, a recording medium insertion part 9886, an LED lamp 9890, input means (operation keys 9885, connection terminals 9887, a sensor 9888 (including functions for measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor or infrared rays), a microphone 9889), etc. A display unit 9882 is incorporated in the housing 9881, and a display unit 9883 is incorporated in the housing 9891. Also, the portable game machine shown in Figure 14(A) further includes a speaker unit 9884, a recording medium insertion part 9886, an LED lamp 9890, input means (operation keys 9885, connection terminals 9887, a sensor 9888 (including functions for measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor or infrared rays), a microphone 9889), etc. It is equipped with functions for measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor or infrared rays, and a microphone 9889, etc. Of course, the configuration of the portable gaming machine is not limited to the above, and it may be any configuration as long as it includes at least the liquid crystal display device disclosed in this specification, and other accessory equipment can be appropriately provided. The configuration can be such that other accessory equipment is appropriately provided as long as it includes the liquid crystal display device disclosed in this specification. The portable gaming machine shown in Fig. 14(A) has functions such as reading programs or data recorded on a recording medium and displaying them on the display unit, and wireless communication with other portable gaming machines to share information. Of course, the functions of the portable gaming machine shown in Fig. 14(A) are not limited to this, and it can have various functions. Fig. 14(B) shows an example of a slot machine 9900, which is a large gaming machine. In the slot machine 9900, a display unit 9903 is incorporated in a housing 9901.

[0243] The slot machine 9900 also includes operating means such as a start lever and a stop switch, a coin insertion slot, a speaker, etc. Of course, the configuration of the slot machine 9900 is not limited to the above, and it can be any configuration as long as it includes at least the liquid crystal display device disclosed in this specification, and other accessory equipment can be appropriately provided. Fig. 15(A) shows an example of a mobile phone 1000. The mobile phone 1000 includes, in addition to a display unit 1002 incorporated in a housing 1001, operation buttons 1003, an external connection port 1004, a speaker 1005, a microphone 1006, etc. The mobile phone 1000 shown in Fig. 15(A) can input information by touching the display unit 1002 with a finger or the like. Also, operations such as making a call or sending an email can be performed by touching the display unit 1002 with a finger or the like.

[0244]

[0245]

[0246] ​​​​​​ The screen of the display unit 1002 mainly has three modes. The first is the display mode mainly for displaying images, the second is the input mode mainly for inputting information such as characters. The third is the display + input mode in which the two modes of the display mode and the input mode are mixed.

[0247] For example, when making a call or creating an email, the display unit 1002 may be set to the character input mode mainly for inputting characters, and an input operation for the characters displayed on the screen may be performed. In this case, it is preferable to display a keyboard or number buttons on most of the screen of the display unit 1002.

[0248] In addition, by providing a detection device having sensors such as a gyro and an acceleration sensor inside the mobile phone 1000 to detect the inclination, the orientation (portrait or landscape) of the mobile phone 1000 can be determined, and the screen display of the display unit 1002 can be automatically switched.

[0249] Also, the switching of the screen mode is performed by touching the display unit 1002 or operating the operation button 1003 of the housing 1001. Also, it can be switched according to the type of image displayed on the display unit 1002. For example, if the image signal displayed on the display unit is video data, it is switched to the display mode, and if it is text data, it is switched to the input mode.

[0250] In addition, in the input mode, the signal detected by the optical sensor of the display unit 1002 is detected, and when there is no touch operation on the display unit 1002 for a certain period, the mode of the screen may be controlled to be switched from the input mode to the display mode.

[0251] The display unit 1002 can also function as an image sensor. For example, by touching the palm or fingers on the display unit 10 02, it is possible to perform personal authentication by imaging palm prints, fingerprints, etc. Also, if a backlight that emits near-infrared light or a light source for sensing that emits near-infrared light is used in the display unit, it is also possible to image finger veins, palm veins, etc.

[0252] Figure 15(B) is also an example of a mobile phone. The mobile phone in Figure 15(B) has a display device 9410 including a housing 9411, a display unit 9412, and operation buttons 9413, and a communication device 9400 including operation buttons 9402, an external input terminal 9403, a microphone 9404, a speaker 9405, and a light-emitting unit 9406 that emits light when receiving an incoming call in a housing 9401. The display device 9410 having a display function is detachable in two directions of the arrow from the communication device 9400 having a telephone function. Therefore, it is possible to attach the short axes of the display device 9410 and the communication device 9400 to each other, or attach the long axes of the display device 9410 and the communication device 9400 to each other. Also, when only the display function is required, the display device 9410 can be removed from the communication device 9400 and the display device 9410 can be used alone. The communication device 9400 and the display device 9410 can exchange images or input information by wireless communication or wired communication, and each has a rechargeable battery. ​

Claims

[Claim 1] a thin film transistor in which an oxide semiconductor layer overlapping with a gate electrode layer is used as a channel formation region; 、 A flat first electrode layer; a second electrode layer having an opening pattern; an interlayer film provided between the thin film transistor and the second electrode layer; a liquid crystal layer on the interlayer film, the first electrode layer, and the second electrode layer; Either the first electrode layer or the second electrode layer is electrically connected to the thin film transistor. one is a pixel electrode layer electrically connected to the other, and the other is a common electrode layer; The interlayer film is a chromatic light-transmitting resin layer having a lower light transmittance than the oxide semiconductor layer. 、 The chromatic light-transmitting resin layer overlaps the pixel electrode layer and covers the oxide semiconductor layer. The liquid crystal display device is provided so as to cover the liquid crystal display device.

Images