Embedding method and system

Abstract

To provide an embedding method and a system that can embed a low-stress film in gaps between multiple dies formed on a substrate at low temperature and in a short time.SOLUTION: An embedding method includes the steps of: preparing a structure in which multiple dies are spaced apart on a substrate; filling the gaps between the multiple dies with insulating particles; and forming an insulating film on the surface of the structure by ALD and embedding the insulating film in the gaps, such that an embedded layer is formed in the gaps, with the insulating film filling the spaces between the insulating particles.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to an embedding method and an embedding system.

Background Art

[0002] Patent Document 1 discloses a technique of overmolding on a base wafer in an assembly in which a plurality of die stacks are formed on the base wafer, in order to form a sealing structure between the die stacks, for example, using film-assisted molding or compression molding of an electrically insulating substance.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides an embedding method and an embedding system capable of embedding a low-temperature, short-time, and low-stress film in a gap between a plurality of dies formed on a substrate.

Means for Solving the Problems

[0005] An embedding method according to an aspect of the present disclosure includes a step of preparing a structure in which a plurality of dies are arranged at intervals on a substrate, a step of filling a gap between the plurality of dies with insulating fine particles, and a step of forming an insulating film on the surface of the structure by ALD and embedding the film in the gap, wherein an embedding layer in which the film is filled between the fine particles is formed in the gap.

Effects of the Invention

[0006] According to the present disclosure, an embedding method and an embedding system are provided that can embed a film with low temperature, short time, and low stress in a gap between a plurality of dies formed on a substrate.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

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Figure 6

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Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Embodiment for Carrying Out the Invention

[0008] Hereinafter, embodiments will be specifically described with reference to the accompanying drawings.

[0009] <Embedding Method> FIG. 1 is a flowchart for explaining an embedding method according to an embodiment, and FIG. 2 is a sectional view of the process. As shown in FIG. 1, the embedding method according to this embodiment has steps ST1 to ST5. Step ST1 is a step of preparing a structure in which a plurality of dies are mounted on a substrate. Step ST2 is a step of cleaning the surface of the structure. Step ST3 is a step of filling the gaps between the dies with insulating fine particles. Step ST4 is a step of drying the structure after filling with insulating fine particles. Step ST5 is a step of forming an insulating film on the surface of the substrate by ALD and embedding it in the gap. Among the above steps, steps ST1, ST3, and ST5 are the main steps. Step ST2 is a step to be performed as necessary, and step ST4 is a step required when filling the gap with insulating fine particles dispersed in a solvent.

[0010] In step ST1, as shown in FIG. 2(a), a structure 1 in which a plurality of dies 4 are arranged at intervals on a substrate 2 is prepared. The substrate 2 is a carrier substrate such as a carrier wafer, for example. The plurality of dies 4 are mounted on the substrate 2 via an adhesive layer 3 made of an organic resin called Glue, for example. Here, an example of a carrier substrate such as a carrier wafer is shown as the substrate 2, but the substrate is not limited to this and may have electrodes or wirings, and the die 4 may be directly bonded to the substrate 2 by hybrid bonding or the like.

[0011] Die 4 is an IC chip formed by dicing a semiconductor wafer after a semiconductor circuit is formed, and has a semiconductor substrate 4a and a circuit portion 4b formed on the surface portion thereof. Die 4 may be a single die or a stack of single dies. The width of the gap 5 between dies 4 is, for example, about 1 to 100 μm, and the depth of the gap 5 substantially corresponds to the height of die 4 and may be, for example, in the range of 20 to 100 μm.

[0012] In step ST2, the surface of the structure 1, that is, the surfaces of the substrate 2 and die 4 are cleaned. The cleaning process is performed to remove organic components and improve hydrophilicity to enhance the filling property of fine particles, and can be performed, for example, with chemical solutions such as SC1 and SPM. The cleaning process may be a single-wafer spin cleaning in which the structure 1 is rotated while supplying a chemical solution to the structure 1, or a batch cleaning in which a plurality of structures 1 are immersed in a chemical solution all at once. The cleaning process includes drying after cleaning.

[0013] In step ST3, as shown in FIG. 2(b), the gap 5 between dies 4 is filled with insulating fine particles 6. The insulating fine particles 6 are not particularly limited as long as they are insulating, and may be inorganic substances or organic substances. As the insulating fine particles 6, for example, SiO2 (silica) can be preferably used, or SiN may be used. The insulating fine particles 6 may be spherical. Also, the size (particle diameter) of the insulating fine particles 6 may be in the range of 300 to 1500 nm as described later.

[0014] When filling the gap 5 with the insulating fine particles 6, the state is not particularly limited, but the fine particles 6 may be in a state of being dispersed in a chemical solution with good dispersibility. The chemical solution for dispersing the insulating fine particles 6 is not particularly limited as long as the fine particles 6 can be well dispersed. For example, water, isopropyl alcohol (IPA), and ethylene glycol can be used. In addition to having good dispersibility with respect to the fine particles 6, these can be removed relatively easily. Water and IPA can be volatilized and removed by a drying process at a temperature of about 60 °C for about 3 minutes, and ethylene glycol can be volatilized and removed by a drying process at a temperature of about 100 °C for about 3 minutes. Among these, water is the cheapest. Also, ethylene glycol has the advantage that the surface tension is large and the particle residue on the substrate surface can be reduced. FIG. 3 is an SEM photograph showing a state in which SiO2 (silica) fine particles are dispersed in a chemical solution and embedded in the gap as the insulating fine particles 6. As shown in FIG. 3, it can be seen that the SiO2 (silica) fine particles are uniformly filled in the gap.

[0015] As a method for filling the gap 5 with the insulating fine particles 6, there can be mentioned a method of dropping a slurry in which the insulating fine particles 6 are dispersed in a chemical solution onto the structure 1, a method of immersing the structure 1 in the slurry and pulling it out, and a method of spin-coating by dropping the slurry onto the structure 1 and rotating the substrate 2. From the viewpoint of mass productivity such as being able to fill the gap 5 with the fine particles 6 with less slurry, spin coating is preferable.

[0016] In step ST4, after embedding the insulating fine particles 6 in step ST3, a drying process is performed to remove the solvent in which the fine particles 6 are dispersed. The drying process may be only baking, or O2 plasma treatment may be performed after baking. The O2 plasma treatment is particularly effective when ethylene glycol is used as the solvent. Ethylene glycol tends to remain in the gap 5 even after baking, but can be completely removed by O2 plasma.

[0017] In step ST5, as shown in Fig. 2(c), with the insulating microparticles 6 filled in the gap 5, an insulating film 7 is formed on the surface of the structure 1 by ALD and embedded in the gap 5 between the dies 4. As a result, the insulating film 7 fills the gaps between the insulating microparticles 6 in the gap 5, and an embedded layer 8 is formed. Since the voids between the microparticles 6 are filled with the film 7, the embedded layer 8 has high insulation with almost no voids.

[0018] By forming the insulating film 7 using ALD, it is possible to form the film at a temperature lower than 280°C, which is the heat-resistant temperature of Glue used as the adhesive layer 3. When the die 4 is directly bonded to the substrate 2, the problem of the heat resistance of Glue does not occur, but from the viewpoint of the heat resistance of the element and the like, low-temperature film formation is similarly required, and film formation by ALD is effective. The lower the temperature during film formation, the better, and preferably 100°C or lower.

[0019] The formation of the insulating film 7 by ALD alternately supplies a first reactant and a second reactant to the structure 1, and forms the film by these reactions. As a typical example, a first step of supplying a source gas to the structure 1 for adsorption and a second step of supplying a reaction gas to the structure 1 to react with the source gas to form a thin film are repeated to form a film with a predetermined thickness. A purge step for discharging the residual gas may be performed between the first step and the second step.

[0020] The insulating film 7 is not particularly limited as long as it is insulating, and it may be made of the same material as the insulating fine particles. As the insulating film 7, a silicon oxide (SiO2) film or a silicon nitride (SiN) film is suitable. When forming a SiO2 film by ALD, a Si-containing gas can be used as a source gas and an oxygen-containing gas can be used as a reaction gas for film formation. As the oxygen-containing gas, an oxygen-containing plasma, for example, O2 plasma is suitable. Also, when forming a SiN film by ALD, a Si-containing gas can be used as a source gas and a nitrogen-containing gas can be used as a reaction gas for film formation. As the nitrogen-containing gas, a nitrogen-containing plasma, for example, N2 plasma is suitable. By ALD, it is possible to easily form a film at a temperature lower than the heat resistance temperature of Glue, which is 280°C. When forming a SiO2 film or a SiN film by ALD, by selecting the types of source gas and reaction gas and other conditions, film formation at 100°C or lower, and even near room temperature is also possible.

[0021] Examples of combinations of source gas and reaction gas for forming a SiO2 film as the insulating film 7 are as follows. Source gas Reaction gas (Me2N)3Si-SiH3O3 or O2 plasma (Me2SiO)4O2 plasma MeOSi(NCO)3H2O2 Si(NCO)4H2O Si(OEt)4O2 plasma Si(OMe)4H2O Si2Cl6O3 SiCl4H2O SiH(NMe2)3O3 or H2O or O2 plasma SiH2(NEt2)2O3 or O2 plasma SiH3N(iPr)2O3 or O2 plasma SiH4N2O plasma or CO2 plasma

[0022] Also, when using a SiN film as the insulating film 7, examples of combinations of source gas and reaction gas are as follows. Source gas, reaction gas N(Si2H5)3N2 plasma N(SiH3)3N2 plasma or NH3 plasma Si(SiH3)4N2 plasma SiH(NMe2)3N2 plasma SiH2(NEt2)2N2 plasma SiH4N2 plasma SiHMe3NH3 plasma Si2Cl6NH3

[0023] The insulating film 7 embedded in the gap 5 between dies 4 by ALD in step ST5 is desirably a film with high uniformity and low Depth Loading. By having high film uniformity, film stress can be reduced. Depth Loading refers to the phenomenon where the film deposition amount in the part below the Top (e.g., Bottm) of the gap is smaller than the film deposition amount at the Top of the gap.

[0024] For example, the diffusion of reaction gas such as O2 plasma (O2 radicals) during ALD affects Depth Loading. That is, if the diffusibility of the reaction gas is improved, the film deposition reaction proceeds to the bottom of the gap 5 and Depth Loading becomes smaller.

[0025] The diffusibility of the reaction gas can be improved by increasing the supply time of the reaction gas. The experiment to confirm this will be described below.

[0026] In this experiment, after filling a gap with a depth of 45 μm with SiO2 (silica) microparticles with a particle size of 300 nm, an SiO2 film was formed by ALD to fill the gap. For ALD, diisopropylaminosilane (DIPAS (SiH3N(iPr)2)) was used as the source gas with a supply rate of 250 sccm, and O2 plasma was used as the reaction gas. It was carried out under three conditions of Case 1 to Case 3 at a temperature of 100 °C or lower. In Case 1, the pressure was 2 Torr, the source gas supply time was 4 sec, and the supply time of O2 plasma was 30 sec. In Case 2, the pressure was increased to 6 Torr, and the other conditions were the same as in Case 1. In Case 3, the supply time of O2 plasma was set to 120 sec, which was four times that of Case 1, and the other conditions were the same as in Case 1.

[0027] Then, the ALD film thickness was measured at five positions in the depth direction shown in Fig. 4, namely, Position A: Top, Position B: Top-Middle, Position C: Middle, Position D: Middle-Bottom, and Position E: Bottom. Fig. 5 is a diagram showing the relationship between the depth position of the gap and the ratio of the film thickness to the film thickness at the Top. As shown in Fig. 5, in Case 1, at the Top-Middle position (Position B) where the depth position is about 10 μm, the ratio of the film thickness to the Top has already decreased to about 20%, indicating that the Depth Loading is large. It can be seen that the Depth Loading is hardly improved in Case 2. On the other hand, in Case 3, the ratio of the film thickness to the Top at the Top-Middle position (Position B) is 90% or more, indicating an improvement in Depth Loading.

[0028] In Case 2, the reason why Depth Loading is not improved is considered to be that although increasing the pressure results in a high concentration gradient of the source gas and a high diffusion rate, the diffusion of O2 plasma (O2 radicals) does not progress. On the other hand, when supplying O2 plasma as the reaction gas, generally, the automatic pressure control valve (APC valve) is opened to discharge by-products, and basically the pressure becomes low, so the concentration gradient is low. Therefore, it is considered that by increasing the supply time of O2 plasma (O2 radicals) as in Case 3, the diffusion of O2 plasma (O2 radicals) progresses and Depth Loading is improved.

[0029] However, as shown in Fig. 5, there is a limit to the improvement effect of Depth Loading by adjusting the supply time of the reaction gas.

[0030] As a method for promoting the diffusion of the reaction gas during ALD film formation, it is effective to increase the size (particle diameter) of the insulating fine particles 6. That is, by increasing the size of the insulating fine particles 6, the gaps between the fine particles become larger, the diffusibility of the reaction gas is improved, and the film formation reaction is likely to occur even at the bottom of the gap.

[0031] Fig. 6 is a diagram showing the relationship between the depth of the gap and the ratio of the film thickness to the film thickness at the Top when ALD film formation is performed under the conditions of Case 3 for the cases where the size of the insulating fine particles is 300 nm and 1500 nm. As shown in this figure, when the size of the fine particles is 300 nm, almost no film is formed at the Bottom, whereas when the size of the fine particles is 1500 nm, a film thickness equivalent to that at the Top is obtained even at the Bottom, and it can be seen that Depth Loading is almost 0. That is, when the size (particle diameter) of the insulating fine particles 6 is small, the gaps between the particles are small and the reaction gas is difficult to diffuse, so the top is quickly blocked and Depth Loading becomes large. On the other hand, when the size of the insulating fine particles 6 becomes large, the diffusibility of the reaction gas becomes good and Depth Loading becomes small.

[0032] When performing ALD film formation under the conditions of Case 3 described above, the relationship between the size of the insulating fine particles 6 and Depth Loading (the ratio of the film formation amount at the bottom to the film formation amount at the top) is as shown in FIG. 7. That is, when the size of the insulating fine particles 6 becomes larger than 300 nm, Depth Loading rapidly decreases, and when it exceeds 500 nm, it tends to saturate. On the other hand, as shown in FIG. 7, the total time of ALD film formation increases as the size of the insulating fine particles 6 increases. This is because the gaps between the particles increase.

[0033] That is, the relationship between the fine particle size and Depth Loading, and the relationship between the fine particle size and the total time of ALD film formation conceptually become as shown in FIG. 8. From this figure, it can be seen that there is an optimal fine particle size with a small Depth Loading and a short total time of ALD film formation.

[0034] Conventionally, as in Patent Document 1, a technique of filling the gap between dies with a mold has been adopted, but it is necessary to bake at a temperature equal to or higher than the heat resistance temperature of the glue, which may also have an adverse effect on the element. There is also a problem that the stress is large and the substrate is distorted. Filling the gap with PE-CVD has also been performed, but with only a thin film formation technique such as CVD, it takes a long time to fill a deep gap of 20 to 100 μm. There is also a problem that the stress of the embedded film is large and the substrate is still distorted.

[0035] In contrast, according to the present embodiment, after filling the gap 5 between the dies 4 with insulating fine particles 6, an insulating film 7 is formed by ALD. Therefore, the process can be performed at a low temperature and can be embedded in a short time. That is, when filling the gap 5 with the insulating fine particles 6, it is not necessary to bake at a high temperature like a mold. Even when the insulating fine particles 6 are dispersed in a chemical solution and filled, heating at 100 °C to remove the chemical solution is sufficient. Also, since the subsequent formation of the insulating film 7 is also performed by ALD, it can be performed at a low temperature. Furthermore, by performing film formation by ALD after filling the gap 5 with the insulating fine particles 6, the embedding time can be significantly shortened compared to the case where ALD is performed from the beginning. Moreover, by adopting a method of forming an insulating film 7 by ALD after filling the gap with the insulating fine particles 6, it is possible to achieve both the ALD time and the film uniformity by adjusting the size of the fine particles, and the film stress can also be reduced.

[0036] <Embedding system> Next, an example of an embedding system for implementing the embedding method of the above-described embodiment will be described. FIG. 9 is a block diagram showing an example of the embedding system.

[0037] The embedding system 100 includes a fine particle filling device 200, a film forming device 300, a transfer device 400, and a control unit 500.

[0038] [Fine particle filling device] FIG. 10 is a cross-sectional view showing an example of the coating unit 220 of the fine particle filling device 200. The fine particle filling device 200 applies a slurry in which insulating fine particles are dispersed in a chemical solution to the surface of the structure 1 in which a plurality of dies are mounted on a substrate in the coating unit 220, and dries it in a drying unit (not shown) to fill the gap between the plurality of dies with the insulating fine particles.

[0039] The coating section 220 of the fine particle filling device 200 includes a chamber 201, a spin chuck 202 that rotatably holds the structure 1 within the chamber 201, a motor 203 that rotates the spin chuck 202, and a nozzle 204 that discharges slurry onto the structure 1 held by the spin chuck 202. The slurry is supplied to the nozzle 204 from a slurry supply mechanism 205 via a pipe 206. A cup 207 for covering the structure 1 held by the spin chuck 202 is provided within the chamber 201. A drain pipe 208 is provided at the bottom of the cup 207. A loading / unloading port 209 for loading and unloading the structure 1 is provided on the side wall of the chamber 201. Also, a back rinse nozzle 210 is provided on the back side of the structure 1 held by the spin chuck 202.

[0040] In the fine particle filling device 200 configured as described above, in the coating section 220, a slurry in which insulating fine particles such as silica are dispersed in a chemical solution is supplied from the slurry supply mechanism 205 to the nozzle 204 via the pipe 206. Then, the slurry is discharged from the nozzle 204 onto the surface of the structure 1, and then the structure 1 is rotated by the motor 203 via the spin chuck 202. As a result, the slurry is applied to the surface of the structure 1. Thereby, the insulating fine particles dispersed in the chemical solution are filled into the gaps between the plurality of dies. Then, the chemical solution is volatilized and removed in the drying section, and only the insulating fine particles are filled in the gaps.

[0041] [Film forming apparatus] FIG. 11 is a longitudinal sectional view showing an example of the film forming apparatus 300, and FIG. 12 is a cross-sectional view showing an example of the film forming apparatus 300. The film forming apparatus 300 forms an insulating film on the surface of the structure 1 after filling the gaps with insulating fine particles by ALD and embeds the film in the gaps, and is configured as a vertical batch type film forming apparatus. In this example, the case of forming a SiO2 film as an insulating film by supplying an Si-containing gas as a source gas and supplying O2 plasma as a reaction gas will be described.

[0042] The film forming apparatus 300 has a cylindrical processing container 301 with an open lower end and an upper end sealed by a ceiling plate 302. The processing container 301 and the ceiling plate 302 are made of, for example, quartz. Further, a metal manifold 303 formed in a cylindrical shape, for example, is connected to the lower end opening of the processing container 301 via a sealing member 304 such as an O-ring.

[0043] The manifold 303 supports the lower end of the processing container 301, and a quartz boat 305 on which, for example, 50 to 100 structures 1 after being filled with fine particles can be placed in multiple stages can be inserted into the processing container 301 from below the manifold 303. The boat 305 has three support columns 306 (see FIG. 12), and is configured such that a large number of structures 1 are supported by grooves formed in the support columns 306.

[0044] The boat 305 is placed on a table 308 via, for example, a heat insulating cylinder 307 made of quartz, and the table 308 is supported on a rotating shaft 310 that penetrates a metal lid 309 that opens and closes the lower end opening of the manifold 303.

[0045] And, for example, a magnetic fluid seal 311 is provided in the penetrating portion of the rotating shaft 310, and the rotating shaft 310 is rotatably supported while being hermetically sealed. Further, a sealing member 312 is interposed between the peripheral portion of the lid 309 and the lower end portion of the manifold 303, thereby maintaining the sealing property inside the processing container 301.

[0046] The rotating shaft 310 is attached to the tip of an arm 313 supported by, for example, a lifting mechanism (not shown), and the boat 305, the lid 309, etc. are integrally lifted and lowered so as to be inserted into and removed from the processing container 301. Note that the table 308 may be fixedly provided on the lid 309 side, and the film forming process may be performed without rotating the boat 305.

[0047] In addition, the film forming apparatus 300 includes an O2 gas supply mechanism 314 that supplies O2 gas into the processing container 301, an Si-containing gas supply mechanism 315 that supplies an Si-containing gas as a source gas into the processing container 301, and a purge gas supply mechanism 316 that supplies an inert gas, such as N2 gas, as a purge gas into the processing container 301.

[0048] The O2 gas supply mechanism 314 includes an O2 gas supply source 317, an O2 gas pipe 318 that guides O2 gas from the O2 gas supply source 317, and an O2 gas dispersion nozzle 319 that is connected to the O2 gas pipe 318 and penetrates the side wall of the manifold 303 inward and extends vertically upward. A plurality of gas discharge holes 319a are formed at predetermined intervals in the vertical portion of the O2 gas dispersion nozzle 319, and O2 gas can be discharged substantially uniformly from each gas discharge hole 319a in the horizontal direction toward the processing container 301.

[0049] The Si-containing gas supply mechanism 315 includes an Si-containing gas supply source 320, an Si-containing gas pipe 321 that guides the Si-containing gas from the Si-containing gas supply source 320, and an Si-containing gas dispersion nozzle 322 made of a quartz tube that is connected to the Si-containing gas pipe 321 and penetrates the side wall of the manifold 303 inward and extends vertically upward. Two Si-containing gas dispersion nozzles 322 are provided (see FIG. 12), and a plurality of gas discharge holes 322a are formed at predetermined intervals along the length direction of each Si-containing gas dispersion nozzle 322, and Si-containing gas can be discharged substantially uniformly from each gas discharge hole 322a in the horizontal direction into the processing container 301. This Si-containing gas dispersion nozzle 322 may be only one.

[0050] The purge gas supply mechanism 316 includes a purge gas supply source 323, a purge gas pipe 324 that guides the purge gas from the purge gas supply source 323, and a purge gas nozzle 325 that is connected to the purge gas pipe 324 and penetrates the side wall of the manifold 303.

[0051] The O₂ gas pipe 318, the Si-containing gas pipe 321, and the purge gas pipe 324 are each provided with an on-off valve 318a, 321a, 324a and a flow controller 318b, 321b, 324b such as a mass flow controller, so that the O₂ gas, the Si-containing gas, and the purge gas can be supplied while controlling their respective flow rates.

[0052] A plasma generation mechanism 330 for exciting O₂ gas to form O₂ plasma is formed in a part of the side wall of the processing container 301. This plasma generation mechanism 330 has a plasma partition wall 332 made of, for example, quartz, which is hermetically joined to the outer wall of the processing container 301 so as to cover an opening 331 formed by notching the side wall of the processing container 301 along the vertical direction from the outside. The plasma partition wall 332 is provided so as to protrude from the processing container 301, and its internal space communicates with the processing space inside the processing container 301. Further, the plasma generation mechanism 330 has a pair of elongated plasma electrodes 333 arranged so as to face each other along the vertical direction on the outer surfaces of both side walls of the plasma partition wall 332, and a high-frequency power source 335 connected to these via a power supply line 334. The opening 331, the plasma partition wall 332, and the plasma electrodes 333 are formed so as to be able to cover all the structures 1 held by the boat 305 in the height direction. The O₂ gas dispersion nozzle 319 extends upward along the innermost part inside the plasma partition wall 332. Then, by applying a high-frequency voltage of, for example, 13.56 MHz from the high-frequency power source 335 to the plasma electrodes 333 while injecting O₂ gas from the gas discharge holes 319a of the O₂ gas dispersion nozzle 319, O₂ plasma is generated. The O₂ plasma is diffused toward the processing container 301 and supplied to each structure 1. An insulating protection cover 336 is attached to the outside of the plasma partition wall 332 so as to cover it.

[0053] On the portion of the processing container 301 opposite to the opening 331, an exhaust port 337 for vacuum exhaust, which is formed by vertically and elongately notching the processing container 301, is provided. An exhaust port cover member 338 that covers the exhaust port 337 is joined to the processing container 301. This exhaust port cover member 338 extends upward along the side wall of the processing container 301 and defines an exhaust flow path and a gas outlet 339 located above the processing container 301. Then, the inside of the processing container 301 is vacuum-exhausted by a vacuum exhaust mechanism (not shown) from this gas outlet 339. Also, a cylindrical heating device 340 for heating the inside of the processing container 301 is provided so as to surround the outer periphery of the processing container 301.

[0054] In the film forming apparatus configured as described above, first, at room temperature, for example, the boat 305 in a state where 50 to 100 structures 1 are mounted is loaded by raising it from below into the processing container 301 whose temperature has been previously controlled to a predetermined temperature, and the lower end opening of the manifold 303 is closed with the lid portion 309 to make the inside of the processing container 301 a sealed space.

[0055] Then, the inside of the processing container 301 is evacuated and maintained at a predetermined process pressure, and the supply power to the heating device 340 is controlled to maintain the temperature inside the processing container 301 at the process temperature, and the film forming process is started with the boat 305 rotated. The film forming process at this time includes a first step of supplying a Si-containing gas, which is a source gas, into the processing container 301 and adsorbing it onto the structure 1, and a second step of supplying O2 plasma (O2 radicals) formed by exciting O2 gas, which is a reaction gas, into the processing container 301 and reacting it with the Si source gas. These steps are repeated to form a SiO2 film with a predetermined film thickness and fill the gap of the structure 1. After the first step and the second step, a purge step of supplying a purge gas into the processing container 301 to remove the remaining gas is performed.

[0056] By forming a film by ALD using an Si-containing gas as a source gas and O2 plasma (O2 radicals) as a reaction gas, a SiO2 film can be embedded in the gap at a temperature lower than the heat resistance temperature (about 280 °C) of the glue as the adhesive layer. In particular, by using, for example, diisopropylaminosilane (DIPAS(SiH3N(iPr)2)), which is an aminosilane gas, as the Si-containing gas, a film can be formed at 100 °C or lower.

[0057] [Transfer device] The transfer device 400 transfers the structure 1 from the fine particle filling device 200 to the film forming device 300. At this time, the transfer is performed with a plurality of structures 1 stored in the storage container. The transfer device 400 may transfer the structure 1 while holding the storage container in a vacuum atmosphere or an inert atmosphere.

[0058] [Control unit] The control unit 500 controls the fine particle filling device 200, the film forming device 300, and the transfer device 400, which are components of the embedding system 100. The control unit 500 includes a main control unit having a CPU (computer), an input device, an output device, a display device, and a storage device. The main control unit of the control unit 500 causes the embedding system 100 to execute a desired operation based on, for example, a processing recipe stored in a storage medium built into the storage device or a storage medium set in the storage device.

[0059] In the embedding system 100, by operating the fine particle filling device 200 and the film forming device 300 having the above-described configurations under the control of the control unit 500 as described above, an embedding method according to an embodiment can be realized.

[0060] Note that the embedding system 100 may have a cleaning device that cleans the structure 1 prior to filling the gap of the structure 1 with insulating fine particles, and a transfer device that transfers the structure 1 from the cleaning device to the fine particle filling device 200.

[0061] [Other applications] Although the embodiments have been described above, the disclosed embodiments should be considered to be illustrative in all respects and not restrictive. The above embodiments may be omitted, replaced, or changed in various forms without departing from the scope and spirit of the appended claims.

[0062] For example, as the fine particle filling device of the above embodiment, although one that spin-coats a structure with insulating fine particles dispersed in a chemical solution has been exemplified, it is not limited thereto, and a structure may be immersed in a chemical solution in which insulating fine particles are dispersed and then pulled up to fill the insulating fine particles. In this case, a batch-type fine particle filling device capable of filling fine particles in a plurality of structures at once can be used.

[0063] Also, although a vertical batch-type film forming device has been exemplified as the film forming device, it is not limited thereto, and a single-wafer film forming device that places a structure on a stage and performs ALD film formation may be used.

Explanation of Reference Numerals

[0064] 1; Structure 2; Substrate 3; Adhesive layer 4; Die 4a; Semiconductor substrate 4b; Circuit portion 5; Gap 6; Insulating fine particles 7; Insulating film 8; Embedded layer 100; Embedding system 200; Fine particle filling device 220; Coating portion 300; Film forming device 400; Transfer device 500; Control unit

Claims

1. A step of preparing a structure in which a plurality of dies are arranged on a substrate with a gap therebetween; A step of filling the gap between the plurality of dies with insulating fine particles; A step of forming an insulating film on the surface of the structure by ALD and embedding the film in the gap; The embedding method includes, and an embedding layer in which the film is filled between the fine particles is formed in the gap.

2. The embedding method according to claim 1, wherein the substrate is a carrier substrate, and the die is adhered to the substrate via an adhesive layer.

3. The embedding method according to claim 1, further comprising a cleaning step of cleaning the surface of the structure, which is performed prior to the step of filling the fine particles.

4. The embedding method according to claim 1, wherein the fine particles and the film are made of the same material.

5. The embedding method according to claim 1, wherein the step of embedding the film is performed at a temperature of 100° C. or lower.

6. The embedding method according to claim 1, wherein the step of filling the fine particles is to fill the gap with the fine particles dispersed in a chemical solution.

7. The embedding method according to claim 6, wherein the chemical solution is any one of water, isopropyl alcohol, and ethylene glycol.

8. The embedding method according to claim 6 or 7, further comprising a step of drying the structure, which is performed after the step of filling the fine particles.

9. The embedding method according to any one of claims 1 to 7, wherein the size of the fine particles is 300 to 1500 nm.

10. The microparticles are composed of SiO ２ or SiN, and the embedding method according to any one of claims 1 to 7.

11. The step of embedding the film is to alternately supply an Si-containing gas and an oxygen-containing gas to embed an SiO ２ film, the embedding method according to any one of claims 1 to 7.

12. The oxygen-containing gas is O ２ The embedding method according to claim 11, wherein the oxygen-containing gas is plasma.

13. The embedding method according to any one of claims 1 to 7, wherein the step of embedding the film is to embed a SiN film by alternately supplying a Si-containing gas and a nitrogen-containing gas.

14. The nitrogen-containing gas is N ２ The embedding method according to claim 13, wherein the nitrogen-containing gas is plasma.

15. An embedding system for embedding a gap between a plurality of dies of a structure in which a plurality of dies are arranged on a substrate with a gap therebetween, comprising: A fine particle filling device for filling the gap with insulating fine particles; A film forming device for forming an insulating film on the surface of the structure by ALD and embedding the film in the gap; The embedding system includes, and an embedding layer in which the film is filled between the fine particles is formed in the gap.

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