Semiconductor device integrating passive component and IC chip

Abstract

To provide an integrated DC-DC converter that can improve the efficiency of dissipating heat generated by an IC chip and a coil and reduce the effects of electromagnetic noise as much as possible.SOLUTION: A semiconductor device includes a molded portion 1 formed by integrally molding an IC chip 2 and a coil 3 connected to the circuit of the IC chip 2 with a molded member made of IMC material, a magnetic member 10 formed on the upper surface of the molded portion 1, and a substrate 4 on which the molded portion 1 is placed on the upper surface and on which lands connected to electrodes 2A to 2E of the IC chip 2 and electrodes 3A, 3B of the coil 3, respectively, are arranged on the lower surface so as to face the outside, and which is for mounting to a motherboard 101 via the lands.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a semiconductor device in which a passive component and an IC chip are integrated, and is particularly useful when applied to a coil-integrated DC-DC converter in which a coil as a passive component and an IC chip incorporating a DC-DC converter circuit as an electronic circuit are integrated.

Background Art

[0002] As a prior art disclosing a coil-integrated DC-DC converter in which a coil as a passive component and an IC chip incorporating a DC-DC converter circuit as an electronic circuit are integrated, there is Patent Document 1.

[0003] Although the semiconductor layer device according to Patent Document 1 has a certain effect that it does not need to include wiring for connecting a coil and an IC chip and can have a simpler configuration accordingly, no particular consideration is given to the structure for dissipating heat generated by the IC chip which is a heat source.

[0004] In recent years, in semiconductor devices that are increasingly miniaturized, while miniaturizing the entire device by miniaturizing and integrating components, how to suppress the adverse effects caused by heat generation has become an urgent problem to be solved.

[0005] Furthermore, recently, devices that generate electromagnetic noise due to switching, such as when the IC circuit incorporated in the IC chip is a DC-DC converter, are increasing. Also, electromagnetic noise generated from passive components such as coils in addition to the IC chip has become a problem.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0007] In view of the above prior art, an object of the present invention is to provide a semiconductor device in which a passive component and an IC chip are integrated, which can improve the heat dissipation efficiency of heat generated in an IC chip and passive components and can reduce the influence of electromagnetic noise as much as possible.

Means for Solving the Problems

[0008] A first aspect of the present invention for achieving the above object is a molded part formed by integrally molding an IC chip having an IC circuit and a passive component connected to the IC circuit with a molding member having a heat dissipation performance of 10 W / m·K or more, a magnetic member formed on the upper surface of the molded part, a substrate that places the molded part on one surface, which is the upper surface, and arranges lands connected to the electrodes of the IC chip and the electrodes of the passive component on the other surface, which is the lower surface, so as to face the outside, and is mounted on a mother board via the lands. It is characterized by having the above.

[0009] A second aspect of the present invention is In the semiconductor device in which the passive component and the IC chip described in the first aspect are integrated, the passive component is laminated on the upper surface of the IC chip having a short dimension in the horizontal direction, which is the width direction, of the molded part, and an adjustment post of a conductive member for adjusting so that the distance of the circuit from the electrode formed on the lower surface of the passive component to the upper surface of the substrate is the same as the distance of the circuit from the electrode formed on the lower surface of the IC chip to the upper surface of the substrate is connected to the electrode.

[0010] A third aspect of the present invention is a molded part formed by integrally molding an IC chip having an IC circuit and a passive component connected to the IC circuit with a molding member having a heat dissipation performance of 10 W / m·K or more, A magnetic member for reducing electromagnetic noise generated by the IC circuit, A semiconductor device integrating a passive component and an IC chip, having a substrate on which the mold part is placed on the upper surface which is one surface, and lands respectively connected to the electrodes of the IC chip and the electrodes of the passive component on the lower surface which is the other surface are arranged to face the outside, and the substrate for mounting on a motherboard via the lands. In the mold part, the passive component and the IC chip are arranged side by side in the horizontal direction which is the width direction of the mold part so that the positions of their respective electrodes are flush on the lower surface side of the passive component and the IC chip, and then molded. The magnetic member is formed by any one of both a first member disposed in contact with the upper surface of the mold part and a second member integrally molded in contact with the upper surface of the IC chip inside the mold part, only the first member, or only the second member. A semiconductor device integrating a passive component and an IC chip, characterized by this.

[0011] A fourth aspect of the present invention is In the semiconductor device integrating a passive component and an IC chip described in any one of the first to third aspects, The mold member is characterized by being formed of an IMC (Inter Metallic Compound) material.

[0012] A fifth aspect of the present invention is In the semiconductor device integrating a passive component and an IC chip described in any one of the first to third aspects, The mold member is characterized by being formed of a resin containing a magnetic material.

Effects of the Invention

[0013] In the present invention, an IC chip and passive components are integrally molded with a mold member having a high thermal conductivity with a heat dissipation performance of 10 W / m·K or more to form a mold portion. Therefore, heat generated by the IC chip or passive components can be efficiently dissipated to a motherboard or the like having a large heat capacity. As a result, high-efficiency heat dissipation of the semiconductor device can be realized.

[0014] In addition, good magnetic shielding of the IC chip and passive components can be realized by a magnetic member formed on the upper surface of the mold portion or a magnetic member formed on the upper surfaces of the magnetic member and the passive element. Therefore, the adverse effect on the IC chip due to magnetic noise can be reduced as much as possible.

Brief Description of the Drawings

[0015]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Modes for Carrying Out the Invention

[0016] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[0017] <First Embodiment> FIG. 1 is a longitudinal sectional view showing a semiconductor device according to a first embodiment of the present invention. As shown in the figure, the mold part 1 of the semiconductor device I integrally molds an IC chip 2 incorporating an IC circuit and a coil 3 which is a passive component with a mold member having a high thermal conductivity. More specifically, the mold part 1 has a flat horizontal part 1A forming a horizontal plane, a leg part 1B extending downward from the end of the horizontal part 1A below the horizontal part 1A, and a recess 1C partitioned by the inner peripheral surface of the leg part 1B and opening downward at the central part of the horizontal part 1A. The coil 3 is placed on the upper surface of the IC chip 2 and integrally laminated so that the upper surface of the coil 3 contacts the bottom surface of the recess 1C.

[0018] Here, the mold part 1 in this embodiment is formed using an IMC (Inter Metallic Compound; the same applies hereinafter) material as a mold material with a high thermal conductivity. IMC is a material manufactured by a manufacturing technique called the nanomizing method based on Sn-Cu. In addition to good conductivity, it is useful as a bonding agent having a uniform and homogeneous fine grain structure, and at the same time, it is a material having a high thermal conductivity.

[0019] The coil 3 is a member having an occupation area in the horizontal plane larger than that of the IC chip 2. Therefore, both ends of the coil 3 protrude left and right from the upper surface of the IC chip 2 in the laminated state on the IC chip 2, and electrodes 3A and 3B are formed on the lower surface of this protruding part.

[0020] The IC chip 2 has a plurality (five in the figure) of electrodes 2A, 2B, 2C, 2D, and 2E on its lower surface. Each of the electrodes 2A to 2E is connected to lands 4A, 4B, and 4C formed on the upper surface of a substrate 4 which is a flat plate formed of an insulator such as an epoxy resin via IMC materials 5A, 5B, 5C, and 5D.

[0021] On the other hand, since the lower surfaces of the electrodes 3A and 3B of the coil 3 are located above the positions of the electrodes 2A to 2E by the amount that the coil 3 is laminated on the upper surface of the IC chip 2, the upper surfaces of the adjustment posts 6A and 6B formed of a conductive member so as to correct this positional deviation are connected to the electrodes 3A and 3B via the IMCs 7A and 7B. At the same time, the lower surfaces of the adjustment posts 6A and 6B are connected to lands (not shown) formed on the substrate 4 via the IMCs 7C and 7D.

[0022] Here, an insulating material 8 such as resin is filled between the molded portion 1 formed here and the electrodes 3A and 3B and the adjustment posts 6A and 6B. Also, the spaces between the IMC materials 5A to 5D on the lower surface of the IC chip 2 are filled with an underfill material 9 which is also an insulating material. Thus, a structure is provided to ensure insulation between the electrodes 3A and 3B, which are the charging portions, the adjustment posts 6A and 6B, and the molded portion 1 formed of a conductive IMC material, and between the electrodes 5A to 5D.

[0023] A magnetic member 10 is formed on the upper surface of the molded portion 1. Such a magnetic member 10 can be favorably formed of, for example, a ferrite plate.

[0024] The semiconductor device I as described above is mounted on a motherboard 101. Such mounting is performed via lands (not shown; the same applies hereinafter) disposed on the upper surface of the motherboard 101. More specifically, lands 4A, 4B, 4C, 4D, 4E, and 4F, which are conductive portions, are formed on the lower surface of the substrate 4 so as to be exposed to the outside, and each land 4A is joined to each land of the motherboard 101.

[0025] In the semiconductor device I according to the first embodiment as described above, the heat generated in the IC chip 2 is dissipated through two heat paths: a first heat path that reaches the motherboard 101 via the coil 3, the horizontal portion 1A of the molded portion 1, the leg portion 1B, and the substrate 4; and a second heat path that reaches the motherboard 101 via the electrodes 2A to 2E and the substrate 4. Here, since the molded portion 1 is a member having a high thermal conductivity, extremely efficient heat dissipation is achieved.

[0026] As in the semiconductor device I according to this embodiment, the discharge performance of the mold part 1 formed of the IMC material of the mold material has a heat dissipation performance of 40 to 50 w / m·k or more on the upper and lower surfaces of the IC chip 2. On the other hand, the heat dissipation performance of the semiconductor device according to the prior art is about 1 w / m·k.

[0027] Further, since the magnetic member 10 is formed on the upper surface of the mold part 1 in the semiconductor device I according to this embodiment, as a result of the magnetic member 10 magnetically shielding the IC chip 2 and the coil 3, it is possible to prevent both the electronic circuit in the IC chip 2 and the coil 3 from being affected by an external magnetic field and the external device from being electromagnetically affected.

[0028] <Second Embodiment> FIG. 2 is a longitudinal sectional view showing a semiconductor device according to the second embodiment of the present invention. As shown in the figure, the semiconductor device II according to this embodiment is different only in the configuration of the mold material, that is, the mold part 11, from the semiconductor device I according to the first embodiment shown in FIG. 1. The mold material in this embodiment uses a resin containing a magnetic material, and the mold part 11 is formed of this resin containing a magnetic material. Other configurations are the same as those of the semiconductor device I shown in FIG. 1. Therefore, the same parts are denoted by the same reference numerals, and redundant descriptions are omitted.

[0029] Even in the semiconductor device II according to the second embodiment, the same effects as those of the semiconductor device I according to the first embodiment can be obtained with respect to the heat dissipation characteristics in the mold part 11 and the magnetic shielding effect by the magnetic member 10. Incidentally, the mold part 11 of the semiconductor device II in this embodiment has a heat dissipation performance of 10 to 15 w / m·k or more. This is inferior to the magnetic member 1 of the semiconductor device I according to the first embodiment, but is a sufficiently large value compared to the prior art.

[0030] <Modification> FIG. 3 is a longitudinal sectional view showing a modified example of the semiconductor device according to the first and second embodiments of the present invention. As shown in the figure, the semiconductor device III according to this modified example has different configurations of the mold parts 1, 11 and the magnetic members 10, 12 from those of the semiconductor devices I, II shown in FIG. 1 or FIG. 2. The mold material in this modified example uses the IMC material used in the first embodiment or the resin containing a magnetic material used in the second embodiment, and the mold part 41 is formed of this IMC material or the resin containing a magnetic material.

[0031] The magnetic member in this modified example is formed of two members, a magnetic member 10 and a magnetic member 12. Among these, the magnetic member 10 is a first member disposed in contact with the upper surface of the mold part 41, and the magnetic member 12 is a second member integrally molded in contact with the upper surface of the IC chip 2 inside the mold part 41.

[0032] Other configurations are the same as those of the semiconductor devices I, II shown in FIG. 1 or FIG. 2. Therefore, the same parts are given the same numbers, and redundant explanations are omitted.

[0033] As shown in FIG. 3, only the IC chip 2 having an IC circuit built therein and the magnetic member 12 are molded in the mold part 41 of the semiconductor device III according to this modified example. That is, passive components such as the coil 3 are not molded. However, the mold member forming the mold part 41 uses an IMC material or a resin containing a magnetic material, which is a material having a high thermal conductivity similar to that of the first and second embodiments.

[0034] Thus, in this modified example, the heat generated by the IC chip 2 is dissipated well toward the mother board 101 through the first heat path in the semiconductor devices shown in FIGS. 1 and 2 formed in the mold parts 1, 11 formed of an IMC material or a resin containing a magnetic material, which is a mold member having a high thermal conductivity, and the second heat path leading to the mother board 101 through the electrodes 2A to 2E and the substrate 4, similar to the semiconductor device I shown in FIG. 1.

[0035] In addition, the IC chip 2 is well electromagnetic shielded by the first magnetic member 10. More specifically, in the semiconductor device III according to this example, the magnetic member 10 is formed on the upper surface of the mold part 1, and at the same time, the magnetic member 12 is also formed. As a result, the IC chip 2 is better magnetically shielded, so that it is possible to prevent the electronic circuit in the IC chip 2 from being affected by an external magnetic field and from exerting an electromagnetic influence on external devices.

[0036] In FIG. 3, the magnetic members 10 and 12 and two members are used. However, the electromagnetic shielding performance of the entire semiconductor device III is inferior to that when two members are used. However, a predetermined electromagnetic shielding effect can be obtained even when only one of them is used. In this case, using only the magnetic member 12 is more effective than using only the magnetic member 10. The magnetic member 12 is closer to the IC chip 2 which is the source of electromagnetic noise, and can more effectively exert the electromagnetic shielding function. Also, the installation area is such that the magnetic member 10 needs to cover the entire upper surface of the mold part 41, while the magnetic member 12 only needs to be able to cover the upper surface of the IC chip 2 which has a smaller area compared to the area of the upper surface of the mold part 41.

[0037] <The Third Embodiment> FIG. 4 is a longitudinal sectional view showing a semiconductor device according to the third embodiment of the present invention. As shown in the figure, in the semiconductor device IV according to this embodiment, the mold material is formed of the same IMC as the semiconductor device I according to the first embodiment shown in FIG. 1, but the configuration of the mold part 21 is different.

[0038] In the mold part 21 of the semiconductor device IV according to this embodiment, an IC chip 2 having an IC circuit built therein, a magnetic member 12, and a coil 3 which is a passive member are molded. Also, the magnetic member is formed of two members, the magnetic member 10 and the magnetic member 12, in the same manner as the modified example shown in FIG. 3. Among these, the magnetic member 10 is the first member disposed in contact with the upper surface of the mold part 21, and the magnetic member 12 is the second member integrally molded in contact with the upper surface of the IC chip 2 inside the mold part 21.

[0039] Furthermore, in the molding portion 21, the positions of the electrodes 2A to 2E of the IC chip 2 and the positions of the electrodes 3A and 3B of the coil 3 are arranged side by side in the horizontal direction, which is the width direction of the molding portion 21, so as to be flush on the lower surface side of the IC chip 2 and the coil 3, and then molded. Here, the electrodes 3A and 3B of the coil 3 are connected to the lands 4K and 4F formed on the upper surface of the substrate 4 via the IMCs 7A and 7B. Also, an insulating member 8 is filled between the conductive portions such as between the electrodes 3A and 3B and between the conductive portions such as the electrodes 3A and 3B and the molding portion 21 formed by the IMC to ensure insulation between them.

[0040] Thus, in this embodiment, the heat generated by the IC chip 2 is dissipated well toward the motherboard 101 through the first heat path in the semiconductor device shown in FIGS. 1 and 2 formed by the IMC material, which is a molding member with high thermal conductivity, or the molding portions 1 and 11 formed of a resin containing a magnetic material, and the second heat path leading to the motherboard 101 through the electrodes 2A to 2E and the substrate 4, similar to the semiconductor device I shown in FIG. 1.

[0041] On the other hand, regarding electromagnetic noise, the magnetic member 10 provides overall magnetic shielding for the semiconductor device IV, and the magnetic member 12 mainly provides magnetic shielding for the IC chip 2. That is, in this embodiment, since the magnetic member 10 is formed on the upper surface of the molding portion 21 and at the same time the magnetic member 12 is also formed, the IC chip 2 is better magnetically shielded. As a result, it is possible to prevent the electronic circuit in the IC chip 2 from being affected by an external magnetic field and from exerting an electromagnetic influence on external devices.

[0042] In FIG. 4, magnetic members 10 and 12 are used, and two members are used. However, the electromagnetic shielding performance of the entire semiconductor device IV is inferior to that when using two members. Even when only one of them is used, a predetermined electromagnetic shielding effect can be obtained. In this case, using only the magnetic member 12 is more effective than using only the magnetic member 10. The magnetic member 12 is closer to the IC chip 2 which is the source of electromagnetic noise, and can more effectively exhibit the electromagnetic shielding function. Also, for the installation area, the magnetic member 10 needs to cover the entire upper surface of the mold part 41, while the magnetic member 12 only needs to cover the upper surface of the IC chip 2 which has a smaller area compared to the area of the upper surface of the mold part 41.

[0043] Other configurations are the same as those of the semiconductor device I shown in FIG. 1. Therefore, the same numbers are assigned to the same parts, and redundant explanations are omitted.

[0044] Even in the semiconductor device IV according to the third embodiment, regarding the heat dissipation characteristics in the mold part 21 and the magnetic shielding effect by the magnetic member 10, the same effects as those of the semiconductor device I according to the first embodiment can be obtained. The difference between the two is that in the semiconductor device I according to the first embodiment, the IC chip 2 and the coil 3 are stacked in the vertical direction, while in the semiconductor device III according to the third embodiment, the IC chip 2 and the coil 3 are arranged side by side in the horizontal direction. As a result, the adjustment posts 6A and 6B are required for the former, while they are not required for the latter. However, the occupied area in the horizontal direction is larger for the latter. Therefore, it can be appropriately selected considering the applications to which the semiconductor devices I and III are applied.

[0045] <Fourth Embodiment> FIG. 5 is a longitudinal sectional view showing a semiconductor device according to a fourth embodiment of the present invention. As shown in the figure, the semiconductor device V according to this embodiment is different only in the configuration of the molding material, that is, the molding portion 31, from the semiconductor device IV according to the third embodiment shown in FIG. 4. The molding material in this embodiment uses a resin containing a magnetic material, and the molding portion 31 is formed of this resin containing a magnetic material. Other configurations including the magnetic members 10 and 12 are the same as those of the semiconductor device IV shown in FIG. 4. Therefore, the same numbers are assigned to the same parts, and duplicate explanations are omitted.

[0046] Also in the semiconductor device IV according to the fourth embodiment, with respect to the heat dissipation characteristics in the molding portion 31, the same effects as those of the semiconductor device II according to the second embodiment can be obtained. Incidentally, in the molding portion 31 of the semiconductor device IV in this embodiment, it has a heat dissipation performance of 10 to 15 w / m·k or more. This is inferior to the molding portion 21 of the semiconductor device III according to the third embodiment, but is a sufficiently large value compared to the prior art.

[0047] In addition, with respect to the magnetic shielding structure using the magnetic members 10 and 12 for electromagnetic shielding, it has exactly the same configuration as the semiconductor device IV according to the third embodiment. Therefore, it is the best mode to configure the magnetic members with two sheets like the magnetic members 10 and 12, followed by the mode with only the magnetic member 12, and then the mode with only the magnetic member 10.

Explanation of reference numerals

[0048] I, II, III, IV, V Semiconductor devices 1, 11, 21, 31 Molding portions 2 IC chips 3 Coils 4 Substrates 10, 12 Magnetic members

Claims

1. a molded part configured by integrally molding an IC chip having an IC circuit built therein and a passive component connected to the IC circuit with a molded member having a heat dissipation performance of 10 w / m·k or more; a magnetic member formed on an upper surface of the molded portion; a substrate on which the molded portion is placed on an upper surface, and on which lands connected to the electrodes of the IC chip and the electrodes of the passive components are disposed on the other lower surface so as to face the outside, and which is to be mounted on a motherboard via the lands; 1. A semiconductor device comprising an integrated circuit (IC) chip and a passive component, comprising:

2. 2. The semiconductor device according to claim 1, wherein the passive components and the IC chip are integrated together. The molded portion has a passive component stacked on the upper surface of the IC chip, which has a shorter dimension in the horizontal direction, i.e., its width direction, and an electrode formed on the underside of the passive component is connected to an adjustment post made of a conductive material that adjusts the distance of the electrical path from the electrode to the upper surface of the substrate so that it is the same as the distance of the electrical path from the electrode formed on the underside of the IC chip to the upper surface of the substrate. This is a semiconductor device that integrates a passive component and an IC chip.

3. a molded part configured by integrally molding an IC chip having an IC circuit built therein and a passive component connected to the IC circuit with a molded member having a heat dissipation performance of 10 w / m·k or more; a magnetic member for reducing electromagnetic noise generated by the IC circuit; a semiconductor device in which a passive component and an IC chip are integrated, the semiconductor device having a molded part placed on an upper surface, the other surface being a lower surface, and lands connected to electrodes of the IC chip and electrodes of the passive component, respectively, disposed so as to face outside, and a substrate for mounting the passive component on a motherboard via the lands, The passive components and the IC chip in the molded section are arranged in a horizontal direction, which is a width direction of the molded section, so that the positions of the electrodes of the passive components and the IC chip are flush with each other on the lower surface sides of the passive components and the IC chip, and then molded. A semiconductor device integrating a passive component and an IC chip, characterized in that the magnetic member is either formed of both a first member arranged in contact with the upper surface of the molded portion and a second member molded integrally with the upper surface of the IC chip inside the molded portion in contact with the upper surface of the IC chip, or formed of only the first member, or formed of only the second member.

4. In the semiconductor device in which the passive component and the IC chip are integrated according to any one of claims 1 to 3, 2. A semiconductor device in which a passive component and an IC chip are integrated, wherein the molding member is made of an IMC (Inter Metallic Compound) material.

5. In the semiconductor device in which the passive component and the IC chip are integrated according to any one of claims 1 to 3, 2 is a perspective view of a semiconductor device in which a passive component and an IC chip are integrated together;

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