Electronic appliance

Abstract

To provide an electronic appliance with high security.SOLUTION: An electronic appliance includes a control unit, a detection unit, and a storage unit. The detection unit has a function of detecting a touch operation, and a function of acquiring information about a first finger about the finger that has touched. The storage unit has a function of keeping information about a second finger that is registered in advance. The control unit has a function of checking the information about the first finger and the information about the second finger, and if they match, has a function of executing a predetermined process. The information about the first finger includes first fingerprint information and first position information, and the information about the second finger includes second fingerprint information and second position information.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to an electronic device. One aspect of the present invention relates to an authentication method. One aspect of the present invention relates to a display device. One aspect of the present invention relates to a program.

[0002] Note that one aspect of the present invention is not limited to the above technical field. Examples of the technical field of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (for example, touch sensors, etc.), input / output devices (for example, touch panels, etc.), their driving methods, or their manufacturing methods.

Background Art

[0003] In recent years, information terminal devices such as mobile phones such as smartphones and tablet-type information terminals have become widely popular. Such information terminal devices often contain personal information and the like, and various authentication technologies have been developed to prevent unauthorized use. In addition, the number of applications that require high security, such as various procedures and purchase settlements, is increasing.

[0004] For example, Patent Document 1 discloses an electronic device provided with a fingerprint sensor in a push-button switch section.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] One aspect of the present invention aims to provide a highly secure electronic device. Or, one aspect of the present invention aims to provide an electronic device that can preferably suppress unauthorized use. Or, one aspect of the present invention aims to provide an electronic device that can preferably suppress misoperations. Or, one aspect of the present invention aims to provide a novel electronic device.

[0007] Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention does not necessarily need to solve all of these problems. It is possible to extract other problems from the description of the specification, drawings, and claims.

Means for Solving the Problems

[0008] One aspect of the present invention is an electronic device including a detection unit, a storage unit, and a control unit. The detection unit has a function of detecting a touch operation and a function of acquiring first finger information about the touched finger. The storage unit has a function of holding second finger information registered in advance. The control unit has a function of collating the first finger information acquired by the detection unit with the second finger information and executing a predetermined process when these match and the user is authenticated. The first finger information includes first fingerprint information and first position information, and the second finger information includes second fingerprint information and second position information.

[0009] Also, another aspect of the present invention is an electronic device including a control unit, a display unit, and a storage unit. The display unit has a function of displaying an image on the screen and a function of acquiring first finger information on the screen. The storage unit has a function of holding second finger information registered in advance. The control unit has a function of collating the first finger information with the second finger information and executing a predetermined process when these match. The first finger information includes first fingerprint information and first position information, and the second finger information includes second fingerprint information and second position information. The display unit preferably further has a function of detecting a touch operation.

[0010] Also, the position information is preferably one or both of the information on the direction of the finger and the information on the position of the finger.

[0011] Another aspect of the present invention is a program for causing an electronic device having a detection unit having a function of detecting a touch operation and a function of acquiring finger information, a control unit, and a storage unit to execute, when the detection unit detects a touch operation, a step of acquiring first finger information; a step of collating, by the control unit, the first finger information with second finger information held by the storage unit; and a step of, when the first finger information and the second finger information match, executing, by the control unit, a process corresponding to the touch operation. The first finger information includes first fingerprint information and first position information. The second finger information includes second fingerprint information and second position information.

[0012] Also, another aspect of the present invention is a program for causing an electronic device having a detection unit having a function of detecting a touch operation and a function of acquiring finger information, a control unit, and a storage unit to execute, when the detection unit detects a touch operation, a step of acquiring a plurality of first finger information; a step of collating, by the control unit, the plurality of first finger information with a plurality of second finger information held by the storage unit; and a step of, when each of the plurality of first finger information matches any of the plurality of second finger information, executing, by the control unit, a process corresponding to the touch operation. The first finger information includes first fingerprint information and first position information. The second finger information includes second fingerprint information and second position information.

[0013] Another aspect of the present invention is a program for causing an electronic device having a detection unit having a function of detecting a touch operation and a function of acquiring finger information, a control unit, and a storage unit to perform the following steps: when the detection unit detects a touch operation, acquiring information of a first finger a plurality of times; the control unit collating the plurality of pieces of first finger information with second finger information held by the storage unit; and when the plurality of pieces of first finger information and the second finger information match, the control unit executing processing corresponding to the touch operation. The first finger information includes first fingerprint information and first position information. The second finger information includes a plurality of pieces of second fingerprint information and order information of the touch operations.

[0014] Further, the second finger information may further include a plurality of pieces of second position information.

[0015] In addition, in the above, the display unit preferably has a plurality of pixels. At this time, the pixel preferably has a light-emitting element and a light-receiving element, and the light-emitting element and the light-receiving element are preferably provided on the same plane.

Advantages of the Invention

[0016] According to one aspect of the present invention, it is possible to provide an electronic device with high security. Alternatively, it is possible to provide an electronic device capable of suitably suppressing unauthorized use. Alternatively, it is possible to provide an electronic device capable of suitably suppressing misoperations. Alternatively, it is possible to provide a novel electronic device.

[0017] Note that the description of these effects does not preclude the existence of other effects. One aspect of the present invention does not necessarily have all of these effects. It is possible to extract other effects from the descriptions in the specification, drawings, and claims.

Brief Description of the Drawings

[0018]

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[0019] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and those skilled in the art can easily understand that the form and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments shown below.

[0020] In the configuration of the invention described below, the same reference numerals are commonly used for the same parts or parts having the same functions among different drawings, and the repeated description thereof is omitted. In addition, when referring to the same function, the hatch pattern may be the same and may not be particularly labeled.

[0021] In addition, the position, size, range, etc. of each configuration shown in the drawings may not represent the actual position, size, range, etc. for the sake of easy understanding. For this reason, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0022] Note that the term "film" and the term "layer" can be interchanged with each other depending on the case or the situation. For example, the term "conductive layer" can be changed to the term "conductive film". Or, for example, the term "insulating film" can be changed to the term "insulating layer".

[0023] (Embodiment 1) In this embodiment, an electronic device according to an aspect of the present invention and an operation method of the electronic device will be described.

[0024] Note that in the drawings attached to this specification, the components are classified according to their functions and shown as independent blocks in a block diagram. However, in actuality, it is difficult to completely separate the components by function, and one component may be related to multiple functions, or one function may be realized by multiple components.

[0025] An electronic device according to an aspect of the present invention has a function of acquiring fingerprint information and at least one type of position information as information of a finger touching an input means such as a display unit or a touch pad. Examples of the position information include the position where the finger touches, the direction of the touching finger, and the order in which the fingers touch. An electronic device according to an aspect of the present invention has a function of executing user authentication processing using the finger information. When a user operates the electronic device, since authentication processing can be executed using both fingerprint information and position information, an extremely secure electronic device can be provided.

[0026] For example, when a user attempts to perform a process that requires high security, information of the finger touching the input means can be acquired and authentication processing can be executed. Therefore, even when an unauthorized person unlocks the electronic device or logs in to various systems in an improper manner, it is possible to prevent the execution of a process that requires high security. For example, it is possible to prevent unauthorized execution of processes that require high security, such as access to highly confidential information, purchase settlement, email transmission, and file deletion.

[0027] Alternatively, when unlocking an electronic device or logging into various systems, it is possible to acquire information about the finger that touched the input means and execute an authentication process. Therefore, it is possible to prevent unauthorized unlocking of the electronic device or logging into various systems by others in an improper manner.

[0028] Also, for example, when only using an authentication method using a password, passcode, graphic pattern, etc., if the password or the like is obtained illegally, there is a risk that the electronic device will be misused by malicious users. Further, even when only using biometric authentication such as fingerprint authentication or face authentication, there is a problem that the electronic device can be unlocked without being noticed when the genuine user is sleeping.

[0029] In an electronic device according to an aspect of the present invention, it has a function of acquiring fingerprint information of a user who inputs information such as a password, passcode, or graphic pattern, and performing a user authentication process using both the input information and the fingerprint information. Thereby, security can be enhanced and operation of the electronic device by malicious users can be prevented.

[0030] Also, in order to execute a desired operation in an electronic device according to an aspect of the present invention, not only the fingerprint but also the position, orientation, or operation order of the finger needs to match the previously registered conditions. Therefore, the operation performed by the user to execute the desired process becomes complicated, and it is possible to prevent misoperation by the user. For example, it is possible to suppress unintentionally executing purchase settlement, sending an email, or deleting a file.

[0031] Hereinafter, a more specific configuration example of an electronic device according to an aspect of the present invention will be described with reference to the drawings.

[0032] [Configuration Example 1 of Electronic Device] FIG. 1 shows a block diagram of an electronic device 10 according to an aspect of the present invention. The electronic device 10 includes a control unit 30, a display unit 32, and a storage unit 31. The display unit 32 includes a detection unit 33. The electronic device 10 can be used, for example, as an information terminal device or the like.

[0033] The display unit 32 has a function of displaying an image, a function of detecting a touch operation, and a function of acquiring finger information. The finger information includes fingerprint information and at least one type of position information. Here, an example in which the display unit 32 includes the detection unit 33 is shown. The detection unit 33 is a part that is responsible for the function of detecting a touch operation and the function of acquiring finger information among the above functions of the display unit 32. The display unit 32 can also be referred to as a touch panel with a fingerprint information acquisition function. For example, a display device described in detail in Embodiment 2 can be used for the display unit 32. Note that the touch operation includes contact and may include proximity. Also, the touch operation can also be referred to as an input operation or a touch input by touch.

[0034] The detection unit 33 has a function of outputting information of a finger that has touched the screen to the control unit 30. Specifically, the detection unit 33 has a function of capturing an image of a finger that has touched the screen and outputting the image information to the control unit 30.

[0035] Preferably, the display unit 32 can acquire information of a touched finger at any position on the screen. That is, preferably, the range in which the touch sensor on the screen functions and the range in which finger information can be acquired coincide or are approximately the same.

[0036] The storage unit 31 has a function of holding finger information of a pre-registered user. The storage unit 31 can output the finger information to the control unit 30 in response to a request from the control unit 30.

[0037] It is preferable that the memory unit 31 stores fingerprint information of all fingers used by the user for screen operations. For example, it is possible to store fingerprint information of two fingers, namely, the index finger of the user's right hand and the index finger of the left hand. In addition to this, it is preferable to store fingerprint information of one or more fingers among the middle finger, ring finger, little finger, and thumb. Examples of fingerprint information include patterns of ridge lines on the belly of the finger. Furthermore, as fingerprint information, patterns of ridge lines on the side of the finger may be acquired.

[0038] In the electronic device according to one aspect of the present invention, when registering the user's fingerprint information in advance, the acquisition of fingerprint information is performed one or more times for each finger. It is preferable to perform the acquisition of fingerprint information a plurality of times for each finger, as this can improve the accuracy of authentication. Preferably, the acquisition of fingerprint information is performed, for example, two or more times and five or fewer times for each finger.

[0039] The memory unit 31 stores a combination of fingerprint information and position information as authentication information. For example, as authentication conditions, information such as when fingerprint A is detected at position B, when fingerprint A in orientation C is detected, or when fingerprint A in orientation C is detected at position B is stored. Note that the combination may be individually set by an application or the like within the electronic device.

[0040] In addition, when the detection unit 33 detects a touch operation, the control unit 30 has a function of requesting the detection unit 33 to acquire finger information. Then, the control unit 30 has a function of collating the fingerprint information and position information included in the obtained finger information with the pre-registered authentication information (a combination of fingerprint information and position information). When the control unit 30 determines that these fingerprint information and position information match, the control unit 30 executes a predetermined process corresponding to the user's touch operation. On the other hand, when the control unit 30 determines that at least one of the fingerprint information and the position information does not match, the control unit 30 does not execute the predetermined process.

[0041] As a method for collating fingerprint information and position information executed by the control unit 30, for example, methods such as a template matching method for comparing two images and evaluating their similarity, or a pattern matching method can be used. The collation of fingerprint information and position information may be performed independently or collectively. For example, when the similarity value is equal to or greater than a predetermined value, it can be determined that two pieces of fingerprint information or two pieces of position information match. Also, one or both of the fingerprint information and the position information may be collated by inference using machine learning. At this time, it is preferably performed by inference using a neural network in particular.

[0042] Also, the control unit 30 can function as, for example, a central processing unit (CPU: Central Processing Unit). The control unit 30 performs various data processes and program controls by interpreting and executing instructions from various programs by a processor. Programs that can be executed by the processor may be stored in a memory area of the processor or may be stored in the storage unit 31.

[0043] [Operation Example 1 of Electronic Device 10] Hereinafter, an example of the operation of the electronic device 10 will be described. FIG. 2 is a flowchart related to the operation of the electronic device 10. The flowchart shown in FIG. 2 has steps S1 to S4.

[0044] First, in step S1, a touch operation by the user is detected by the detection unit 33. If a touch operation is detected, the process proceeds to step S2. If no touch operation is performed, the device waits until a touch operation is performed (returns to step S1 again).

[0045] In step S2, the detection unit 33 acquires finger information. The detection unit 33 acquires finger information by imaging an image of the finger.

[0046] In step S3, the control unit 30 executes finger authentication processing. Specifically, it collates the finger information stored in the storage unit 31 with the finger information acquired by the detection unit 33, and determines whether they match. If the authentication is successful (if it is determined that the two pieces of finger information match), the process proceeds to step S4 and the processing is executed. On the other hand, if the authentication fails (if it is determined that the two pieces of finger information do not match), the control unit 30 does not execute the processing and returns to step S1 again.

[0047] In step S4, the control unit 30 executes processing based on the touch operation detected in step S2. Examples of touch operations include operations such as tap, long tap, flick, drag, multi-touch, swipe, pinch-in, and pinch-out.

[0048] After executing the processing in step S4, the process proceeds to step S1 and waits until the touch operation is performed again.

[0049] The above is the description of the flowchart shown in FIG. 2.

[0050] Note that the processing method, operation method, operation method, or display method, etc. executed by the electronic device according to an aspect of the present invention can be described as, for example, a program. For example, a program describing the processing method, operation method, operation method, or display method, etc. executed by the electronic device 10 etc. exemplified above is stored in a non-transitory computer-readable recording medium (also simply referred to as a recording medium or a storage medium), and can be read and executed by an arithmetic device etc. included in the control unit 30 of the electronic device 10. That is, a program for causing the above-exemplified operation method etc. to be executed by hardware, and a non-transitory computer-readable recording medium storing the program are an aspect of the present invention.

[0051] As the non-transitory computer-readable recording medium, a hard disc drive (HDD), a solid state drive (SSD), a flash memory, a Blu-ray disc, a DVD, or the like can be used.

[0052] [Specific Example 1] Hereinafter, a specific example of the electronic device according to one aspect of the present invention will be described.

[0053] Here, an example will be described in which, in addition to the fingerprint information, the information on the direction of the touched finger is also used as a material for authentication determination.

[0054] FIG. 3A shows an example of authenticating the direction of the finger operating the electronic device 10 by dividing it into five levels (14a to 14e). In FIG. 3A, an example is shown in which the angle between two directions is 45 degrees. The direction of the finger can be determined by dividing it into two or more levels, and the angle between two directions can also be set as appropriate. Further, in FIG. 3A, an example is shown in which a range of 180 degrees from the direction of 14d to the direction of 14e is used for authentication, but the present invention is not limited thereto. For example, a range of 360 degrees may be used for authentication (see the broken line shown in FIG. 3A).

[0055] FIG. 3B shows the fingerprint information 22 acquired by the display unit 11 and the fingerprint information 23 of the user registered in advance in the electronic device 10. In FIG. 3B, it is determined that the fingerprint information 22 and the fingerprint information 23 match. In FIG. 3B and the like, the ridge lines of the fingerprint are shown by black lines, but actually, the ridge lines of the fingerprint may be shown by lines of other colors such as white.

[0056] Here, the fingerprint imaging can be acquired by monochromatic imaging. Alternatively, the fingerprint imaging may be acquired by full-color imaging. When imaging in full color, in addition to the fingerprint, the information on the color of the finger may be acquired. For example, when the display device shown in Embodiment 2 is used for the display unit 11, the fingerprint imaging can be performed by changing the emission color according to the color of the finger. Thereby, the accuracy of fingerprint imaging can be improved.

[0057] In FIGS. 3C and 3D, the electronic device 10 and the right index finger 21 of a person operating the electronic device 10 are schematically shown. The electronic device 10 has a display unit 11. An icon 12 for executing a desired process is displayed on the display unit 11. The electronic device 10 is a portable information terminal device that functions as, for example, a smartphone. The index finger 21 has fingerprint information 22 shown in FIG. 3B.

[0058] In FIGS. 3C and 3D, the fingertip of the user's right index finger 21 is touching the display unit 11. At this time, the display unit 11 can acquire finger information about the index finger 21.

[0059] Here, it is assumed that it is registered in the electronic device 10 in advance so that a desired process is executed only when a finger having fingerprint information 23 touches the icon 12 in the orientation of 14a shown in FIG. 3A.

[0060] In FIG. 3C, the index finger 21 having fingerprint information 22 touches the icon 12 in the orientation of 14a, and since it matches the authentication information registered in the electronic device 10, the desired process is being executed (EXECUTED).

[0061] On the other hand, FIG. 3D shows a state where the index finger 21 touches the icon 12 in the orientation of 14c. As shown in FIG. 3D, since the orientation 14c of the index finger 21 does not match the pre-registered finger orientation 14a, user authentication is not performed (ERROR).

[0062] Next, an example will be described in which, in addition to fingerprint information, information on where on the display unit 11 the authentication was performed, that is, information on the location where the finger touched, is also used as a material for authentication judgment.

[0063] FIG. 4A shows an example of authenticating by dividing the display unit 11 of the electronic device 10 into eight regions from region 11a to region 11h. Note that a boundary line (dashed line in the figure) or the like may be displayed so that the user can visually recognize the regions, or the boundary line or the like may not be displayed so that the user cannot identify the regions. Also, the display unit 11 can be divided into two or more regions, and the division method is not limited to equal division. Also, the regions used for authentication may be part or all of the display unit 11.

[0064] FIG. 4B shows the fingerprint information 25 obtained by the display unit 11 and the fingerprint information 26 of the user previously registered in the electronic device 10. In FIG. 4B, it is determined that the fingerprint information 25 and the fingerprint information 26 match.

[0065] FIGS. 4C and 4D schematically show the electronic device 10 and the right thumb 24 of the user operating the electronic device 10. The thumb 24 has the fingerprint information 25 shown in FIG. 4B.

[0066] In FIGS. 4C and 4D, the fingertip of the right thumb 24 of the user touches the display unit 11. At this time, the display unit 11 can acquire finger information about the thumb 24.

[0067] Here, it is assumed that it is previously registered in the electronic device 10 so that the lock of the electronic device 10 is released only when the finger having the fingerprint information 26 touches the region 11b shown in FIG. 4A.

[0068] In FIG. 4C, the right thumb 24 of the user having the fingerprint information 25 touches the region 11b of the display unit 11, the user is authenticated, and the lock is released (UNLOCKED).

[0069] In FIG. 4D, the thumb 24 touches the region 11h of the display unit 11. As shown in FIG. 4D, since the region where the finger actually touches does not match the previously registered region, the user is not authenticated (LOCKED).

[0070] Next, an example will be described in which authentication is performed simultaneously with two or more fingers, and in addition to the fingerprint information, the positional and directional relationships of those fingers are also used as materials for authentication judgment.

[0071] FIGs. 5A, 5D, and 5E schematically show an electronic device 10, the right thumb 24 of a user operating the electronic device 10, and the index finger 27 of the user's left hand. The index finger 27 has fingerprint information 28 shown in FIG. 5B. The thumb 24 has fingerprint information 25 shown in FIG. 5C.

[0072] FIG. 5B shows the fingerprint information 28 acquired by the display unit 11 and the fingerprint information 29 of the user pre-registered in the electronic device 10. In FIG. 5B, it is determined that the fingerprint information 28 and the fingerprint information 29 match.

[0073] FIG. 5C shows the fingerprint information 25 acquired by the display unit 11 and the fingerprint information 26 of the user pre-registered in the electronic device 10. In FIG. 5C, it is determined that the fingerprint information 25 and the fingerprint information 26 match.

[0074] In FIGS. 5A, 5D, and 5E, the right thumb 24 and the index finger 27 of the left hand of the user are touching the display unit 11. At this time, the display unit 11 can acquire finger information about the thumb 24 and the index finger 27.

[0075] In FIG. 5A, the index finger 27 of the user's left hand having the fingerprint information 28 touches the area 11e of the display unit in the direction 14b, and the right thumb 24 of the user having the fingerprint information 25 touches the area 11f of the display unit in the direction 14c, and it is determined that they match the authentication information registered in the electronic device 10. Therefore, the user's authentication is being performed.

[0076] In FIG. 5D, the index finger 27 of the user's left hand touches the area 11g of the display unit in the direction of 14a, and the thumb 24 of the user's right hand touches the area 11h of the display unit in the direction of 14a. In this case, since the combination of the actually touching finger and its direction and the touched area does not match the combination of the pre-registered finger and its direction and the touched area, the user authentication is not performed.

[0077] In FIG. 5E, the index finger 27 of the user's left hand touches the area 11g of the display unit in the direction of 14b, and the thumb 24 of the user's right hand touches the area 11f of the display unit in the direction of 14c. In this case, the combination of the directions of the fingers touching the screen matches the combination of the directions of the fingers pre-registered in the electronic device 10, but the combination of the areas touched by each finger does not match. It is assumed that the user can set whether to perform authentication only when both the direction of the finger and the area touched by the finger match, or to perform authentication even when either one matches. When both the direction of the finger and the area touched by the finger are used for authentication, the user authentication is not performed (LOCKED). When the direction of the finger is used for authentication regardless of the touched area, the user authentication is performed (UNLOCKED) even in the state shown in FIG. 5E.

[0078] The above is the explanation of Specific Example 1.

[0079] [Operation Example 2 of Electronic Device 10] Hereinafter, an example of the operation of the above-described electronic device 10 will be described. FIG. 6 is a flowchart related to the operation of the electronic device 10. The flowchart shown in FIG. 6 has steps S11 to S18.

[0080] Here, an example of an operation in which the user touches the display unit multiple times to perform authentication is shown. The number of times (assumed to be W times. W is an integer of 2 or more) of acquiring finger information necessary for authentication is assumed to be pre-registered in the electronic device. Also, the number of times of acquiring finger information is set to i times (i is an integer of 1 or more and W or less), and according to the order, the information of each finger is referred to as "the information of the i-th finger".

[0081] First, in step S11, the detection unit 33 detects a touch operation by the user. If a touch operation is detected, the process proceeds to step S12. If no touch operation is performed, the system waits until a touch operation is performed (returns to step S11 again).

[0082] In step S12, the detection unit 33 acquires finger information. Since step S12 is the first acquisition of finger information, i = 1.

[0083] In step S13, the control unit adds 1 to i (i = i + 1).

[0084] In step S14, the detection unit 33 acquires the information of the i-th finger.

[0085] In step S15, the control unit 30 checks whether the finger information has been acquired the predetermined number of times (i = W) that was previously registered in the electronic device 10. If the information has been acquired the predetermined number of times, the process proceeds to step S16. If the information has not been acquired the predetermined number of times, the process returns to step S13 again. Then, steps S13 to S15 are repeated until i = W. Note that in the electronic device 10, the required time from the acquisition of the information of the first finger to the acquisition of the information of the W-th finger may be determined in advance or may be arbitrarily set by the user.

[0086] In step S16, the control unit 30 executes a finger authentication process. Specifically, it compares the finger information stored in the storage unit 31 with the finger information acquired i times by the detection unit 33 and determines whether they all match. If the authentication is successful, the process proceeds to step S17 and the process is executed. On the other hand, if the authentication fails (if it is determined that one or more of the i pieces of finger information do not match the finger information registered in advance), the control unit 30 does not execute the process. In FIG. 6, an example is shown where the process proceeds to step S18 and an error message is displayed.

[0087] In step S17, the control unit 30 executes a process based on the touch operation detected in step S11. Examples of touch operations include operations such as tap, long tap, flick, drag, multi-touch, swipe, pinch-in, and pinch-out.

[0088] After executing the process in step S17, the process proceeds to step S11, and it waits until a touch operation is performed again.

[0089] The above is the description of the flowchart shown in FIG. 6.

[0090] [Specific Example 2] Here, an example will be described in which authentication is performed with multiple fingers, and in addition to fingerprint information, the order of the touched fingers is also used as a material for authentication judgment.

[0091] FIG. 7A shows fingerprint information 22 acquired by the display unit 11 and fingerprint information 23 of a user registered in advance in the electronic device 10. In FIG. 7A, it is determined that the fingerprint information 22 and the fingerprint information 23 match.

[0092] FIG. 7B shows fingerprint information 25 acquired by the display unit 11 and fingerprint information 26 of a user registered in advance in the electronic device 10. In FIG. 7B, it is determined that the fingerprint information 25 and the fingerprint information 26 match.

[0093] FIGS. 7C and 7D show the electronic device 10, the right thumb 24 operating the electronic device 10, and the right index finger 21. The index finger 21 has the fingerprint information 22 shown in FIG. 7A. The thumb 24 has the fingerprint information 25 shown in FIG. 7B.

[0094] As shown in FIGS. 7C and 7D, an icon 12 for executing a desired process is displayed on the display unit 11.

[0095] In FIG. 7C, first, after the thumb 24 of the right hand of the user having fingerprint information 25 touches the icon 12, the index finger 21 of the right hand of the user having fingerprint information 22 touches the icon 12, and it is determined that it matches the authentication information registered in the electronic device 10. Therefore, the desired process is being executed.

[0096] In FIG. 7D, different from FIG. 7C, first, after the fingertip of the index finger 21 of the right hand touches the icon 12, the thumb 24 of the right hand touches the icon 12. As shown in FIG. 7D, since the order of the fingers touching the icon does not match the order of the pre-registered fingers, the user authentication is not performed.

[0097] Next, an example will be described in which a process of performing an authentication determination based on the location where the finger touches is performed multiple times, and in addition to the fingerprint information, the order of the locations where each finger touches is also used as a material for the authentication determination.

[0098] FIGS. 8A and 8B schematically show the electronic device 10 and the thumb 24 operating the electronic device. The thumb 24 has the fingerprint information 25 shown in FIG. 8C.

[0099] FIG. 8C shows the fingerprint information 25 acquired by the display unit 11 and the fingerprint information 26 of the user pre-registered in the electronic device 10. In FIG. 8C, it is determined that the fingerprint information 25 and the fingerprint information 26 match.

[0100] In FIG. 8A, the thumb 24 of the right hand of the user having fingerprint information 25 touches the display unit three times in the order of the regions 11b, 11d, and 11h, and it is determined that it matches the authentication information registered in the electronic device 10. Therefore, the user authentication is being performed.

[0101] In FIG. 8B, the thumb 24 of the right hand touches the display unit three times in the order of the regions 11b, 11h, and 11d. Since the actual order of the fingers touching each region does not match the pre-registered order, the user authentication is not performed.

[0102] In addition to fingerprint information, input information such as passwords, passcodes, and graphic patterns may be used as materials for authentication determination. The input information can also be regarded as equivalent to the order of the places touched by the finger. For example, when the correct password is input, it corresponds to the correct order of the places touched by the finger. Therefore, when it is determined that the correct information is input and the fingerprint information of the finger matches the fingerprint information registered in advance, the user can be authenticated. As a result, the operations performed by the user are the same as when using an electronic device that uses an authentication method based only on input information such as passwords, passcodes, or graphic patterns, while the security of the electronic device can be further enhanced.

[0103] Hereinafter, an example in which, in addition to fingerprint information, a graphic pattern input by the user is also used as a material for authentication determination will be described.

[0104] FIG. 9A, FIG. 9D, and FIG. 9E schematically show an electronic device 10, a thumb 24 of a user operating the electronic device, and an index finger 40 of a person different from the user operating the electronic device. The thumb 24 has fingerprint information 25 shown in FIG. 9C. The index finger 40 has fingerprint information 41 shown in FIG. 9B.

[0105] As shown in FIGS. 9A, 9D, and 9E, icons 13a to 13d serving as marks for inputting a graphic pattern are respectively displayed in regions 11c, 11d, 11e, and 11f of the display unit 11.

[0106] FIG. 9B shows the fingerprint information 41 acquired by the display unit 11 and the fingerprint information 26 of the user registered in advance in the electronic device 10. In FIG. 9B, it is determined that the fingerprint information 41 and the fingerprint information 26 do not match.

[0107] Here, it is assumed that the finger having the fingerprint information 26 is registered in the electronic device 10 in advance so that the lock of the electronic device 10 is released only when the finger slides over the icons 13a, 13b, 13c, and 13d in this order and inputs a Z-shaped graphic pattern of the alphabet as shown in FIG. 9A.

[0108] In FIG. 9A, the thumb 24 of the user having the fingerprint information 25 slides the finger over the icons 13a, 13b, 13c, and 13d in this order, inputs a Z-shaped graphic pattern of the alphabet, and the user is authenticated and the lock is released (UNLOCKED).

[0109] In FIG. 9D, the index finger 40 of the right hand of a person other than the user having the fingerprint information 41 slides the finger over the icons 13a, 13b, 13c, and 13d in this order and inputs a Z-shaped graphic pattern of the alphabet. At this time, as shown in FIG. 9B, it is determined that the fingerprint information 41 acquired by the display unit 11 does not match the fingerprint information 26 registered in advance. Although the input graphic pattern matches the registered graphic pattern, the user is not authenticated (LOCKED) because the fingerprint information does not match.

[0110] Next, FIG. 9C shows the fingerprint information 25 acquired by the display unit 11 and the fingerprint information 26 of the user registered in the electronic device 10 in advance. In FIG. 9C, it is determined that the fingerprint information 25 and the fingerprint information 26 match.

[0111] In FIG. 9E, the thumb 24 of the user having the fingerprint information 25 slides the finger over the icons 13a, 13c, 13d, and 13b in this order and inputs a U-shaped graphic pattern of the alphabet. At this time, as shown in FIG. 9C, it is determined that the fingerprint information 25 acquired by the display unit 11 matches the fingerprint information 26 registered in advance, but the user is not authenticated (LOCKED) because the input graphic pattern does not match the registered graphic pattern.

[0112] The above is the description of Specific Example 2.

[0113] [Modification Example] In the above, an example where the display unit 32 includes the detection unit 33 is shown, but these may be provided separately. The electronic device 10A shown in FIG. 10A shows an example where the detection unit 33 is not included in the display unit 32.

[0114] Examples of the detection unit 33 of the electronic device 10A include a touch pad that does not have an image display function.

[0115] Alternatively, a detection unit used for detecting a touch operation and a detection unit used for acquiring finger information may be provided separately. The electronic device 10B shown in FIG. 10B shows an example where a detection unit 33A for acquiring finger information is included in the display unit 32 and a detection unit 33B for detecting a touch operation is provided independently. For example, a display device detailed in Embodiment 2 may be used for the display unit 32, and a capacitive touch sensor may be used for the detection unit 33B.

[0116] Note that in the electronic device 10B, the detection unit 33B that detects a touch operation may be included in the display unit 32, or the detection unit 33A that acquires finger information may be provided independently.

[0117] This embodiment can be appropriately combined with other embodiments. Also, in this specification, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be appropriately combined.

[0118] (Embodiment 2) In this embodiment, a display device according to an aspect of the present invention will be described with reference to FIGS. 11 to 20.

[0119] The display device of this embodiment can be suitably used for the display unit of the electronic device described in Embodiment 1.

[0120] The display unit of the display device according to one aspect of the present invention has a function of displaying an image using a light-emitting element (also referred to as a light-emitting device). Further, the display unit also has one or both of an imaging function and a sensing function.

[0121] The display device according to one aspect of the present invention has a light-receiving element (also referred to as a light-receiving device) and a light-emitting element. Alternatively, the display device according to one aspect of the present invention has a light-receiving and light-emitting element (also referred to as a light-receiving and light-emitting device) and a light-emitting element.

[0122] First, a display device having a light-receiving element and a light-emitting element will be described.

[0123] The display device according to one aspect of the present invention has a light-receiving element and a light-emitting element in the display unit. In the display device according to one aspect of the present invention, the light-emitting elements are arranged in a matrix in the display unit, and an image can be displayed on the display unit. Further, the light-receiving elements are arranged in a matrix in the display unit, and the display unit has one or both of an imaging function and a sensing function. The display unit can be used for an image sensor or a touch sensor. That is, by detecting light with the display unit, an image can be captured or a touch operation of an object (such as a finger or a pen) can be detected. Furthermore, in the display device according to one aspect of the present invention, the light-emitting element can be used as a light source of the sensor. Therefore, it is not necessary to provide a light-receiving unit and a light source separately from the display device, and the number of parts of the electronic device can be reduced.

[0124] In the display device according to one aspect of the present invention, when the light emitted from the light-emitting element included in the display unit is reflected (or scattered) by an object, the light-receiving element can detect the reflected light (or scattered light). Therefore, even in a dark place, imaging and detection of a touch operation are possible.

[0125] The display device according to one aspect of the present invention has a function of displaying an image using a light-emitting element. That is, the light-emitting element functions as a display element (also referred to as a display device).

[0126] As the light-emitting element, it is preferable to use an EL element (also referred to as an EL device) such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode). Examples of the light-emitting substance included in the EL element include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), an inorganic compound (such as a quantum dot material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) material). In addition, as the light-emitting element, an LED such as a micro LED (Light Emitting Diode) can also be used.

[0127] The display device according to one aspect of the present invention has a function of detecting light using a light-receiving element.

[0128] When the light-receiving element is used as an image sensor, the display device can capture an image using the light-receiving element. For example, the display device of the present embodiment can be used as a scanner.

[0129] For example, using an image sensor, data related to biometric information such as fingerprints and palm prints can be acquired. That is, a biometric authentication sensor can be incorporated in the display device. By incorporating the biometric authentication sensor in the display device, the number of components of the electronic device can be reduced compared to the case where a biometric authentication sensor is provided separately from the display device, and the electronic device can be miniaturized and lightened.

[0130] In addition, when the light-receiving element is used as a touch sensor, the display device can detect a touch operation of an object using the light-receiving element.

[0131] As the light-receiving element, for example, a pn-type or pin-type photodiode can be used. The light-receiving element functions as a photoelectric conversion element (also referred to as a photoelectric conversion device) that detects light incident on the light-receiving element and generates charges. The amount of charges generated from the light-receiving element is determined based on the amount of light incident on the light-receiving element.

[0132] In particular, as the light-receiving element, it is preferable to use an organic photodiode having a layer containing an organic compound. Since the organic photodiode can be easily thinned, lightened, and enlarged in area, and also has a high degree of freedom in shape and design, it can be applied to various display devices.

[0133] In one aspect of the present invention, an organic EL element (also referred to as an organic EL device) is used as the light-emitting element, and an organic photodiode is used as the light-receiving element. The organic EL element and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using the organic EL element.

[0134] If all the layers constituting the organic EL element and the organic photodiode are to be made separately, the number of film-forming steps will increase significantly. Since the organic photodiode has many layers that can have the same configuration as the organic EL element, the layers that can have the same configuration can be formed in a batch, thereby suppressing the increase in the film-forming steps.

[0135] For example, one of the pair of electrodes (common electrode) can be a common layer for the light-receiving element and the light-emitting element. Also, for example, it is preferable that at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer is a common layer for the light-receiving element and the light-emitting element. Also, for example, except that the light-receiving element has an active layer and the light-emitting element has a light-emitting layer, the light-receiving element and the light-emitting element can have the same configuration. That is, the light-receiving element can be manufactured by simply replacing the light-emitting layer of the light-emitting element with an active layer. Thus, since the light-receiving element and the light-emitting element have a common layer, the number of film-forming times and the number of masks can be reduced, and the manufacturing process and manufacturing cost of the display device can be reduced. Also, a display device having a light-receiving element can be manufactured using the existing manufacturing equipment and manufacturing method of the display device.

[0136] Note that the layers shared by the light-receiving element and the light-emitting element may have different functions in the light-emitting element and the light-receiving element. In this specification, components are named based on their functions in the light-emitting element. For example, the hole injection layer functions as a hole injection layer in the light-emitting element and as a hole transport layer in the light-receiving element. Similarly, the electron injection layer functions as an electron injection layer in the light-emitting element and as an electron transport layer in the light-receiving element. Also, the layers shared by the light-receiving element and the light-emitting element may have the same functions in the light-emitting element and the light-receiving element. The hole transport layer functions as a hole transport layer in both the light-emitting element and the light-receiving element, and the electron transport layer functions as an electron transport layer in both the light-emitting element and the light-receiving element.

[0137] Next, a display device having a light-receiving and emitting element and a light-emitting element will be described.

[0138] In a display device according to one aspect of the present invention, a sub-pixel that exhibits any color has a light-receiving and emitting element instead of a light-emitting element, and sub-pixels that exhibit other colors have light-emitting elements. The light-receiving and emitting element has both a function of emitting light (light-emitting function) and a function of receiving light (light-receiving function). For example, when a pixel has three sub-pixels: a red sub-pixel, a green sub-pixel, and a blue sub-pixel, at least one sub-pixel has a light-receiving and emitting element, and the other sub-pixels have light-emitting elements. Therefore, the display unit of the display device according to one aspect of the present invention has a function of displaying an image using both the light-receiving and emitting element and the light-emitting element.

[0139] By having the light-receiving and emitting element also serve as a light-emitting element and a light-receiving element, a light-receiving function can be imparted to the pixel without increasing the number of sub-pixels included in the pixel. As a result, one or both of an imaging function and a sensing function can be added to the display unit of the display device while maintaining the aperture ratio of the pixel (the aperture ratio of each sub-pixel) and the fineness of the display device. Therefore, compared to the case where a sub-pixel having a light-receiving element is provided separately from the sub-pixels having light-emitting elements, the display device according to one aspect of the present invention can have a higher aperture ratio of the pixel and is easily capable of achieving higher definition.

[0140] In a display device according to one aspect of the present invention, a light-emitting element and a light-receiving and emitting element are arranged in a matrix in a display unit, and an image can be displayed on the display unit. Further, the display unit can be used for an image sensor or a touch sensor. The display device according to one aspect of the present invention can use the light-emitting element as a light source of the sensor. Therefore, it is not necessary to provide a light-receiving unit and a light source separately from the display device, and the number of components of the electronic device can be reduced.

[0141] In the display device according to one aspect of the present invention, when the light emitted from the light-emitting element included in the display unit is reflected (or scattered) by an object, the light-receiving and emitting element can detect the reflected light (or scattered light). Therefore, imaging and touch operation detection are possible even in a dark place.

[0142] The light-receiving and emitting element can be manufactured by combining an organic EL element and an organic photodiode. For example, the light-receiving and emitting element can be manufactured by adding an active layer of the organic photodiode to the stacked structure of the organic EL element. Further, the light-receiving and emitting element manufactured by combining the organic EL element and the organic photodiode can suppress an increase in the film-forming process by forming in one batch the layers that can have the same configuration as the organic EL element.

[0143] For example, one of a pair of electrodes (common electrode) can be a common layer for the light-receiving and emitting element and the light-emitting element. Further, for example, it is preferable that at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer is a common layer for the light-receiving and emitting element and the light-emitting element. Further, for example, except for the presence or absence of the active layer of the light-receiving element, the light-receiving and emitting element and the light-emitting element can have the same configuration. That is, the light-receiving and emitting element can also be manufactured by simply adding the active layer of the light-receiving element to the light-emitting element. Thus, since the light-receiving and emitting element and the light-emitting element have a common layer, the number of film-forming times and the number of masks can be reduced, and the manufacturing process and manufacturing cost of the display device can be reduced. Further, a display device having a light-receiving and emitting element can be manufactured using an existing manufacturing apparatus and manufacturing method of the display device.

[0144] Note that the layers of the light-receiving and emitting element may have different functions when the light-receiving and emitting element functions as a light-receiving element and when it functions as a light-emitting element. In this specification, components are named based on the functions when the light-receiving and emitting element functions as a light-emitting element. For example, the hole injection layer functions as a hole injection layer when the light-receiving and emitting element functions as a light-emitting element, and functions as a hole transport layer when the light-receiving and emitting element functions as a light-receiving element. Similarly, the electron injection layer functions as an electron injection layer when the light-receiving and emitting element functions as a light-emitting element, and functions as an electron transport layer when the light-receiving and emitting element functions as a light-receiving element. Also, the layers of the light-receiving and emitting element may have the same function when the light-receiving and emitting element functions as a light-receiving element and when it functions as a light-emitting element. The hole transport layer functions as a hole transport layer regardless of whether it functions as a light-emitting element or a light-receiving element, and the electron transport layer functions as an electron transport layer regardless of whether it functions as a light-emitting element or a light-receiving element.

[0145] The display device of this embodiment has a function of displaying an image using a light-emitting element and a light-receiving and emitting element. That is, the light-emitting element and the light-receiving and emitting element function as display elements.

[0146] The display device of this embodiment has a function of detecting light using a light-receiving and emitting element. The light-receiving and emitting element can detect light with a shorter wavelength than the light emitted by the light-receiving and emitting element itself.

[0147] When the light-receiving and emitting element is used as an image sensor, the display device of this embodiment can capture an image using the light-receiving and emitting element. For example, the display device of this embodiment can be used as a scanner.

[0148] Also, when the light-receiving and emitting element is used as a touch sensor, the display device of this embodiment can detect a touch operation of an object using the light-receiving and emitting element.

[0149] The light-receiving and emitting element functions as a photoelectric conversion element that detects light incident on the light-receiving and emitting element and generates electric charges. The amount of electric charges generated from the light-receiving and emitting element is determined based on the amount of light incident on the light-receiving and emitting element.

[0150] The light-receiving and emitting element can be fabricated by adding an active layer of a light-receiving element to the structure of the above-described light-emitting element.

[0151] For example, a pn-type or pin-type photodiode structure can be applied to the light-receiving and emitting element.

[0152] In particular, it is preferable to use an active layer of an organic photodiode having a layer containing an organic compound for the light-receiving and emitting element. Since the organic photodiode can be easily thinned, lightened, and enlarged in area, and also has a high degree of freedom in shape and design, it can be applied to various display devices.

[0153] Hereinafter, a display device according to an aspect of the present invention will be described more specifically with reference to the drawings.

[0154] [Display Device] Cross-sectional views of a display device according to an aspect of the present invention are shown in FIGS. 11A to 11D and FIG. 11F.

[0155] The display device 200A shown in FIG. 11A has a layer 203 having a light-receiving element, a functional layer 205, and a layer 207 having a light-emitting element between a substrate 201 and a substrate 209.

[0156] The display device 200A is configured such that light of red (R), green (G), and blue (B) is emitted from the layer 207 having the light-emitting element.

[0157] The light-receiving element included in the layer 203 having the light-receiving element can detect light incident from the outside of the display device 200A.

[0158] The display device 200B shown in FIG. 11B has a layer 204 having a light-receiving and emitting element, a functional layer 205, and a layer 207 having a light-emitting element between a substrate 201 and a substrate 209.

[0159] The display device 200B is configured such that green (G) light and blue (B) light are emitted from the layer 207 having light-emitting elements, and red (R) light is emitted from the layer 204 having light-receiving and light-emitting elements. Note that in the display device according to one embodiment of the present invention, the color of the light emitted from the layer 204 having light-receiving and light-emitting elements is not limited to red. Also, the color of the light emitted from the layer 207 having light-emitting elements is not limited to the combination of green and blue.

[0160] The light-receiving and light-emitting elements included in the layer 204 having light-receiving and light-emitting elements can detect light incident from outside the display device 200B. The light-receiving and light-emitting elements can detect, for example, one or both of green (G) light and blue (B) light.

[0161] The functional layer 205 includes a circuit for driving a light-receiving element or a light-receiving and light-emitting element and a circuit for driving a light-emitting element. The functional layer 205 can be provided with switches, transistors, capacitors, resistors, wirings, terminals, and the like. Note that when the light-emitting element and the light-receiving element are driven in a passive matrix method, a configuration without switches or transistors may be employed.

[0162] The display device according to one embodiment of the present invention may have a function of detecting an object such as a finger touching the display device (function as a touch panel). For example, as shown in FIG. 11C, light emitted from a light-emitting element in the layer 207 having light-emitting elements is reflected by a finger 202 touching the display device 200A, and a light-receiving element in the layer 203 having light-receiving elements detects the reflected light. Thereby, it can be detected that the finger 202 has touched the display device 200A. Also, in the display device 200B, light emitted from a light-emitting element in the layer 207 having light-emitting elements is reflected by a finger touching the display device 200B, and a light-receiving and light-emitting element in the layer 204 having light-receiving and light-emitting elements can detect the reflected light. Note that hereinafter, the case where light emitted from a light-emitting element is reflected by an object will be described as an example, but the light may be scattered by the object.

[0163] As shown in FIG. 11D, the display device according to one aspect of the present invention may have a function of detecting or imaging an object that is close to (but not in contact with) the display device.

[0164] The display device according to one aspect of the present invention may have a function of detecting the fingerprint of the finger 202. FIG. 11E shows an image diagram of an image captured by the display device according to one aspect of the present invention. In FIG. 11E, the contour of the finger 202 is shown by a dashed line and the contour of the contact portion 261 is shown by a one-dot chain line within the imaging range 263. Within the contact portion 261, an image of the fingerprint 262 with high contrast can be captured due to the difference in the amount of light incident on the light receiving element (or light emitting and receiving element).

[0165] The display device according to one aspect of the present invention can also function as a tablet. FIG. 11F shows a state where the tip of the stylus 208 is touching the substrate 209 and is being slid in the direction of the dashed arrow.

[0166] As shown in FIG. 11F, the scattered light scattered at the contact surface between the tip of the stylus 208 and the substrate 209 is incident on the light receiving element (or light emitting and receiving element) located at the portion overlapping the contact surface, so that the position of the tip of the stylus 208 can be detected with high accuracy.

[0167] FIG. 11G shows an example of the locus 266 of the stylus 208 detected by the display device according to one aspect of the present invention. Since the display device according to one aspect of the present invention can detect the position of a detected object such as the stylus 208 with high position accuracy, it is also possible to perform high-definition drawing in a drawing application or the like. Also, unlike the case where a capacitive touch sensor or an electromagnetic induction type touch pen is used, since the position of a highly insulating detected object can be detected, the material of the tip of the stylus 208 is not limited, and various writing utensils (for example, a pen, a glass pen, a quill pen, etc.) can be used.

[0168] [Pixel] The display device according to one aspect of the present invention has a plurality of pixels arranged in a matrix. One pixel has a plurality of sub-pixels. One sub-pixel has one light-emitting element, one light-emitting and receiving element, or one light-receiving element.

[0169] Each of the plurality of pixels has one or more of a sub-pixel having a light-emitting element, a sub-pixel having a light-receiving element, and a sub-pixel having a light-emitting and receiving element.

[0170] For example, a pixel has a plurality (e.g., three or four) of sub-pixels having a light-emitting element and one sub-pixel having a light-receiving element.

[0171] Note that the light-receiving element may be provided in all pixels or in some pixels. Also, one pixel may have a plurality of light-receiving elements. Further, one light-receiving element may be provided across a plurality of pixels. The fineness of the light-receiving element and the fineness of the light-emitting element may be different from each other.

[0172] When a pixel has three sub-pixels having a light-emitting element, examples of the three sub-pixels include three sub-pixels of R, G, and B colors, and three sub-pixels of yellow (Y), cyan (C), and magenta (M). When a pixel has four sub-pixels having a light-emitting element, examples of the four sub-pixels include four sub-pixels of R, G, B, and white (W) colors, and four sub-pixels of R, G, B, and Y colors.

[0173] FIGS. 11H, 11(J), 11(K), and 11(L) show an example of a pixel having a plurality of sub-pixels having a light-emitting element and one sub-pixel having a light-receiving element. Note that the arrangement order of the sub-pixels shown in this embodiment is not limited to the illustrated order. For example, the positions of sub-pixel (B) and sub-pixel (G) may be reversed.

[0174] The pixels shown in FIGS. 11H, 11(J), and 11(K) all have a sub-pixel (PD) having a light-receiving function, a sub-pixel (R) presenting red light, a sub-pixel (G) presenting green light, and a sub-pixel (B) presenting blue light.

[0175] A matrix array is applied to the pixels shown in FIG. 11H, and a stripe array is applied to the pixels shown in FIG. 11(J). Further, FIG. 11(K) shows an example in which a sub-pixel (R) that exhibits red light, a sub-pixel (G) that exhibits green light, and a sub-pixel (B) that exhibits blue light are arranged in a single horizontal row, and a sub-pixel (PD) having a light-receiving function is arranged below them. That is, in FIG. 11(K), the sub-pixels (R), (G), and (B) are arranged in the same row as each other, and are arranged in a row different from the sub-pixel (PD).

[0176] In addition to the configuration of the pixel shown in FIG. 11(K), the pixel shown in FIG. 11(L) has a sub-pixel (X) that exhibits light other than R, G, and B. Examples of the light other than R, G, and B include light such as white (W), yellow (Y), cyan (C), magenta (M), and infrared light (IR). When the sub-pixel (X) exhibits infrared light, it is preferable that the sub-pixel (PD) having a light-receiving function has a function of detecting infrared light. The sub-pixel (PD) having a light-receiving function may have a function of detecting both visible light and infrared light. The wavelength of the light detected by the light-receiving element can be determined according to the use of the sensor.

[0177] Alternatively, for example, a pixel has a plurality of sub-pixels having a light-emitting element and one sub-pixel having a light-emitting and light-receiving element.

[0178] A display device having a light-emitting and light-receiving element does not need to change the pixel arrangement in order to incorporate a light-receiving function into the pixel, so that one or both of an imaging function and a sensing function can be added to the display unit without reducing the aperture ratio and the definition.

[0179] Note that the light-emitting and light-receiving elements may be provided in all pixels, or may be provided in some pixels. Also, one pixel may have a plurality of light-emitting and light-receiving elements.

[0180] FIGS. 12A to 12D show an example of a pixel having a plurality of sub-pixels having a light-emitting element and one sub-pixel having a light-emitting and light-receiving element.

[0181] The pixel shown in FIG. 12A has a sub-pixel (R·PD) that exhibits red light and has a light receiving function, a sub-pixel (G) that exhibits green light, and a sub-pixel (B) that exhibits blue light, with a stripe array applied. In a display device where a pixel is composed of three sub-pixels of R, G, and B, a display device having a light receiving function can be manufactured by replacing the light emitting element used for the R sub-pixel with a light emitting and receiving element.

[0182] The pixel shown in FIG. 12B has a sub-pixel (R·PD) that exhibits red light and has a light receiving function, a sub-pixel (G) that exhibits green light, and a sub-pixel (B) that exhibits blue light. The sub-pixel (R·PD) is arranged in a column different from the sub-pixels (G) and (B). The sub-pixels (G) and (B) are alternately arranged in the same column, with one provided in odd rows and the other provided in even rows. Note that the sub-pixel arranged in a column different from the sub-pixels of other colors is not limited to red (R), and may be green (G) or blue (B).

[0183] The pixel shown in FIG. 12C has a matrix array applied, and has a sub-pixel (R·PD) that exhibits red light and has a light receiving function, a sub-pixel (G) that exhibits green light, a sub-pixel (B) that exhibits blue light, and a sub-pixel (X) that exhibits light other than R, G, and B. Also in a display device where a pixel is composed of four sub-pixels of R, G, B, and X, a display device having a light receiving function can be manufactured by replacing the light emitting element used for the R sub-pixel with a light emitting and receiving element.

[0184] FIG. 12D shows two pixels, and one pixel is composed of three sub-pixels surrounded by a dotted line. The pixel shown in FIG. 12D has a sub-pixel (R·PD) that exhibits red light and has a light-receiving function, a sub-pixel (G) that exhibits green light, and a sub-pixel (B) that exhibits blue light. In the left pixel shown in FIG. 12D, the sub-pixel (G) is arranged in the same row as the sub-pixel (R·PD), and the sub-pixel (B) is arranged in the same column as the sub-pixel (R·PD). In the right pixel shown in FIG. 12D, the sub-pixel (G) is arranged in the same row as the sub-pixel (R·PD), and the sub-pixel (B) is arranged in the same column as the sub-pixel (G). In the pixel layout shown in FIG. 12D, the sub-pixels (R·PD), (G), and (B) are repeatedly arranged in both odd-numbered rows and even-numbered rows, and in each column, sub-pixels of different colors are arranged in odd-numbered rows and even-numbered rows.

[0185] FIG. 12E shows four pixels to which a pentile array is applied, and two adjacent pixels have sub-pixels that exhibit two different colors of light in combination. Note that the shape of the sub-pixel shown in FIG. 12E indicates the upper surface shape of the light-emitting element or the light-emitting and light-receiving element that the sub-pixel has. FIG. 12F is a modified example of the pixel array shown in FIG. 12E.

[0186] The upper left pixel and the lower right pixel shown in FIG. 12E have a sub-pixel (R·PD) that exhibits red light and has a light-receiving function, and a sub-pixel (G) that exhibits green light. The lower left pixel and the upper right pixel shown in FIG. 12E have a sub-pixel (G) that exhibits green light, and a sub-pixel (B) that exhibits blue light.

[0187] The upper left pixel and the lower right pixel shown in FIG. 12F have a sub-pixel (R·PD) that exhibits red light and has a light-receiving function, and a sub-pixel (G) that exhibits green light. The lower left pixel and the upper right pixel shown in FIG. 12F have a sub-pixel (R·PD) that exhibits red light and has a light-receiving function, and a sub-pixel (B) that exhibits blue light.

[0188] In FIG. 12E, a sub-pixel (G) that exhibits green light is provided for each pixel. On the other hand, in FIG. 12F, a sub-pixel (R·PD) that exhibits red light and has a light-receiving function is provided for each pixel. Since a sub-pixel having a light-receiving function is provided for each pixel, in the configuration shown in FIG. 12F, imaging can be performed with higher resolution than the configuration shown in FIG. 12E. Thereby, for example, the accuracy of biometric authentication can be improved.

[0189] Moreover, the upper surface shape of the light-emitting element and the light-emitting and light-receiving element is not particularly limited, and can be a circle, an ellipse, a polygon, a rounded polygon, or the like. Regarding the upper surface shape of the light-emitting element included in the sub-pixel (G), an example of a circular shape is shown in FIG. 12E, and an example of a square shape is shown in FIG. 12F. The upper surface shapes of the light-emitting elements and the light-emitting and light-receiving elements of each color may be different from each other, or may be the same for some or all of the colors.

[0190] Also, the aperture ratios of the sub-pixels of each color may be different from each other, or may be the same for some or all of the colors. For example, the aperture ratio of the sub-pixel provided for each pixel (sub-pixel (G) in FIG. 12E, sub-pixel (R·PD) in FIG. 12F) may be made smaller than the aperture ratios of the sub-pixels of other colors.

[0191] FIG. 12G is a modified example of the pixel arrangement shown in FIG. 12F. Specifically, the configuration of FIG. 12G is obtained by rotating the configuration of FIG. 12F by 45°. In FIG. 12F, it was described that one pixel is composed of two sub-pixels, but as shown in FIG. 12G, it can also be considered that one pixel is composed of four sub-pixels.

[0192] In FIG. 12G, the description will be made on the assumption that one pixel is composed of four sub-pixels surrounded by a dotted line. One pixel has two sub-pixels (R·PD), one sub-pixel (G), and one sub-pixel (B). In this way, by having a plurality of sub-pixels having a light-receiving function in one pixel, imaging can be performed with high resolution. Therefore, the accuracy of biometric authentication can be improved. For example, the imaging resolution can be made √2 times the display resolution.

[0193] In the display device to which the configuration shown in FIG. 12F or FIG. 12G is applied, there are p first light-emitting elements (where p is an integer of 2 or more), q second light-emitting elements (where q is an integer of 2 or more), and r light-emitting and receiving elements (where r is an integer greater than p and greater than q). p and r satisfy r = 2p. Also, p, q, and r satisfy r = p + q. One of the first light-emitting element and the second light-emitting element emits green light, and the other emits blue light. The light-emitting and receiving element emits red light and has a light-receiving function.

[0194] For example, when detecting a touch operation using the light-emitting and receiving element, it is preferable that the light emission from the light source is difficult for the user to visually recognize. Since blue light has lower visibility than green light, it is preferable to use the light-emitting element that emits blue light as the light source. Therefore, it is preferable that the light-emitting and receiving element has a function of receiving blue light.

[0195] As described above, various arrays of pixels can be applied to the display device of the present embodiment.

[0196] [Device Structure] Next, the detailed configurations of the light-emitting element, the light-receiving element, and the light-emitting and receiving element that can be used in the display device according to one aspect of the present invention will be described.

[0197] The display device according to one aspect of the present invention may be a top emission type that emits light in a direction opposite to the substrate on which the light-emitting element is formed, a bottom emission type that emits light on the substrate side where the light-emitting element is formed, or a dual emission type that emits light on both sides.

[0198] In the present embodiment, a top emission type display device will be described as an example.

[0199] In addition, in this specification and the like, unless otherwise specified, even when describing a configuration having a plurality of elements (such as a light-emitting element and a light-emitting layer), when describing matters common to each element, the alphabet is omitted. For example, when describing matters common to the light-emitting layer 283R and the light-emitting layer 283G, etc., it may be described as the light-emitting layer 283.

[0200] The display device 280A shown in FIG. 13A includes a light-receiving element 270PD, a light-emitting element 270R that emits red (R) light, a light-emitting element 270G that emits green (G) light, and a light-emitting element 270B that emits blue (B) light.

[0201] Each light-emitting element has a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, a light-emitting layer, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 laminated in this order. The light-emitting element 270R has a light-emitting layer 283R, the light-emitting element 270G has a light-emitting layer 283G, and the light-emitting element 270B has a light-emitting layer 283B. The light-emitting layer 283R has a light-emitting substance that emits red light, the light-emitting layer 283G has a light-emitting substance that emits green light, and the light-emitting layer 283B has a light-emitting substance that emits blue light.

[0202] The light-emitting element is an electroluminescent element that emits light toward the common electrode 275 by applying a voltage between the pixel electrode 271 and the common electrode 275.

[0203] The light-receiving element 270PD has a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, an active layer 273, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 laminated in this order.

[0204] The light-receiving element 270PD is a photoelectric conversion element that receives light incident from outside the display device 280A and converts it into an electrical signal.

[0205] In this embodiment, it will be described that in both the light-emitting element and the light-receiving element, the pixel electrode 271 functions as an anode and the common electrode 275 functions as a cathode. That is, the light-receiving element can detect the light incident on the light-receiving element, generate charges, and extract them as a current by applying a reverse bias between the pixel electrode 271 and the common electrode 275 and driving it.

[0206] In the display device of this embodiment, an organic compound is used for the active layer 273 of the light-receiving element 270PD. The light-receiving element 270PD can have the same configuration as the light-emitting element for the layers other than the active layer 273. Therefore, by simply adding a step of forming the active layer 273 to the manufacturing process of the light-emitting element, the light-receiving element 270PD can be formed in parallel with the formation of the light-emitting element. In addition, the light-emitting element and the light-receiving element 270PD can be formed on the same substrate. Therefore, the light-receiving element 270PD can be incorporated into the display device without significantly increasing the manufacturing process.

[0207] In the display device 280A, an example is shown in which the light-receiving element 270PD and the light-emitting element have the same configuration except that the active layer 273 of the light-receiving element 270PD and the light-emitting layer 283 of the light-emitting element are made separately. However, the configurations of the light-receiving element 270PD and the light-emitting element are not limited to this. The light-receiving element 270PD and the light-emitting element may have layers that are made separately from each other in addition to the active layer 273 and the light-emitting layer 283. The light-receiving element 270PD and the light-emitting element preferably have one or more layers (common layers) that are commonly used. Thereby, the light-receiving element 270PD can be incorporated into the display device without significantly increasing the manufacturing process.

[0208] Of the pixel electrode 271 and the common electrode 275, a conductive film that transmits visible light is used for the electrode on the side where light is extracted. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side where light is not extracted.

[0209] It is preferable that a microcavity structure is applied to the light-emitting element included in the display device of the present embodiment. Therefore, it is preferable that one of the pair of electrodes included in the light-emitting element has an electrode (semi-transmissive / semi-reflective electrode) having transmissivity and reflectivity with respect to visible light, and the other preferably has an electrode (reflective electrode) having reflectivity with respect to visible light. By having a microcavity structure, the light emission obtained from the light-emitting layer can be resonated between both electrodes, and the light emitted from the light-emitting element can be enhanced.

[0210] Note that the semi-transmissive / semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode having transmissivity with respect to visible light (also referred to as a transparent electrode).

[0211] The light transmittance of the transparent electrode is set to 40% or more. For example, it is preferable to use an electrode having a visible light (light with a wavelength of 400 nm or more and less than 750 nm) transmittance of 40% or more for the light-emitting element. The visible light reflectivity of the semi-transmissive / semi-reflective electrode is set to 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectivity of the reflective electrode is set to 40% or more and 100% or less, preferably 70% or more and 100% or less. Further, the resistivity of these electrodes is preferably 1×10 -2 Ωcm or less. When the light-emitting element emits near-infrared light (light with a wavelength of 750 nm or more and 1300 nm or less), the transmittance or reflectivity of near-infrared light of these electrodes preferably satisfies the above numerical range in the same manner as the transmittance or reflectivity of visible light.

[0212] The light-emitting element has at least a light-emitting layer 283. The light-emitting element may further have, as layers other than the light-emitting layer 283, a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, a substance with high electron transport property, a substance with high electron injection property, or a bipolar substance (a substance with high electron transport property and high hole transport property).

[0213] For example, the light-emitting element and the light-receiving element can have one or more of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer in common. Further, the light-emitting element and the light-receiving element can separately form one or more of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.

[0214] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection properties. As a material with high hole injection properties, an aromatic amine compound or a composite material containing a hole transport material and an acceptor material (electron-accepting material) can be used.

[0215] In the light-emitting element, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In the light-receiving element, the hole transport layer is a layer that transports holes generated based on light incident on the active layer to the anode. The hole transport layer is a layer containing a hole transport material. As the hole transport material, a substance having a hole mobility of 10 -6 cm 2 / Vs or more is preferable. In addition, as long as it is a substance with higher hole transportability than electrons, other substances can also be used. As the hole transport material, a hole transport material such as a π-electron-excessive heteroaromatic compound (for example, a carbazole derivative, a thiophene derivative, a furan derivative, etc.) or an aromatic amine (a compound having an aromatic amine skeleton) is preferable.

[0216] In the light-emitting element, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. In the light-receiving element, the electron transport layer is a layer that transports electrons generated based on light incident on the active layer to the cathode. The electron transport layer is a layer containing an electron transport material. As the electron transport material, 1×10 -6 cm 2A substance having an electron mobility of / Vs or higher is preferred. In addition, any other substance can be used as long as it has higher electron transportability than holes. As the electron transport material, in addition to metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, etc., oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other electron transport materials such as π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds can be used.

[0217] The electron injection layer is a layer that injects electrons from the cathode into the electron transport layer and is a layer containing a material with high electron injection properties. As the material with high electron injection properties, an alkali metal, an alkaline earth metal, or a compound thereof can be used. As the material with high electron injection properties, a composite material containing an electron transport material and a donor material (electron-donating material) can also be used.

[0218] The light-emitting layer 283 is a layer containing a light-emitting substance. The light-emitting layer 283 can have one or more light-emitting substances. As the light-emitting substance, substances exhibiting light-emitting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red are appropriately used. In addition, a substance that emits near-infrared light can also be used as the light-emitting substance.

[0219] Examples of the light-emitting substance include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0220] Examples of the fluorescent material include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, etc.

[0221] Examples of the phosphorescent material include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton, organometallic complexes (especially iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand, platinum complexes, rare earth metal complexes, and the like.

[0222] In addition to the light-emitting substance (guest material), the light-emitting layer 283 may contain one or more organic compounds (host materials, assist materials, etc.). As the one or more organic compounds, one or both of a hole-transporting material and an electron-transporting material can be used. Further, a bipolar material or a TADF material may be used as the one or more organic compounds.

[0223] The light-emitting layer 283 preferably has, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material that are a combination likely to form an exciplex. By adopting such a configuration, light emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from an exciplex to a light-emitting substance (phosphorescent material), can be efficiently obtained. By selecting a combination that forms an exciplex that exhibits light emission overlapping the wavelength of the absorption band on the lowest energy side of the light-emitting substance, energy transfer becomes smooth and efficient light emission can be obtained. With this configuration, high efficiency, low-voltage driving, and long life of the light-emitting element can be realized simultaneously.

[0224] As a combination of materials that form an exciplex, it is preferable that the HOMO level (highest occupied orbital level) of the hole-transporting material is a value equal to or higher than the HOMO level of the electron-transporting material. It is preferable that the LUMO level (lowest unoccupied orbital level) of the hole-transporting material is a value equal to or higher than the LUMO level of the electron-transporting material. The LUMO level and HOMO level of the material can be derived from the electrochemical characteristics (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV) measurement.

[0225] The formation of an exciplex can be confirmed, for example, by comparing the emission spectra of a hole-transporting material, an electron-transporting material, and a mixed film obtained by mixing these materials, and observing the phenomenon that the emission spectrum of the mixed film is shifted to a longer wavelength (or has a new peak on the longer wavelength side) than the emission spectra of the individual materials. Alternatively, the transient photoluminescence (PL) of a hole-transporting material, the transient PL of an electron-transporting material, and the transient PL of a mixed film obtained by mixing these materials are compared, and the formation of an exciplex can be confirmed by observing differences in transient responses such as that the transient PL lifetime of the mixed film has a longer-lived component or the ratio of the delayed component is larger than the transient PL lifetimes of the individual materials. Also, the above-mentioned transient PL may be read as transient electroluminescence (EL). That is, the transient EL of a hole-transporting material, the transient EL of a material having electron-transporting properties, and the transient EL of a mixed film thereof are compared, and the formation of an exciplex can also be confirmed by observing differences in transient responses.

[0226] The active layer 273 contains a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In the present embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer 273 is shown. By using an organic semiconductor, the light-emitting layer 283 and the active layer 273 can be formed by the same method (for example, vacuum deposition method), and it is preferable because the manufacturing apparatus can be shared.

[0227] Examples of the material of the n-type semiconductor included in the active layer 273 include fullerenes (for example, C 60 , C 70Examples of the electron-accepting organic semiconductor materials include fullerene derivatives and the like. Fullerene has a soccer ball-like shape, and this shape is energetically stable. For fullerene, both the HOMO level and the LUMO level are deep (low). Since the LUMO level of fullerene is deep, its electron-accepting (acceptor) property is extremely high. Usually, like benzene, when π-electron conjugation (resonance) spreads in a plane, the electron-donating (donor) property increases. However, since fullerene has a spherical shape, despite the large spread of π electrons, its electron-accepting property is high. A high electron-accepting property is beneficial for a light-receiving element because it enables efficient and rapid charge separation. C 60 , C 70 Both have broad absorption bands in the visible light region. In particular, C 70 is preferable because it has a larger π-electron conjugation system than C 60 and also has a broad absorption band in the long-wavelength region.

[0228] Examples of the n-type semiconductor materials also include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, quinone derivatives, and the like.

[0229] Examples of the p-type semiconductor materials included in the active layer 273 include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0230] Examples of the p-type semiconductor material include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, and the like. Further examples of the p-type semiconductor material include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylene vinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, and the like.

[0231] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material. The LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0232] As the electron-accepting organic semiconductor material, it is preferable to use spherical fullerenes, and as the electron-donating organic semiconductor material, it is preferable to use an organic semiconductor material having a shape close to a plane. Molecules with similar shapes tend to aggregate easily. When the same type of molecules aggregate, the energy levels of the molecular orbitals are close, so the carrier transport property can be enhanced.

[0233] For example, the active layer 273 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor.

[0234] Either low molecular weight compounds or high molecular weight compounds can be used for the light-emitting element and the light-receiving element, and they may contain inorganic compounds. The layers constituting the light-emitting element and the light-receiving element can be formed by methods such as vapor deposition (including vacuum vapor deposition), transfer method, printing method, inkjet method, coating method, and the like.

[0235] The display device 280B shown in FIG. 13B is different from the display device 280A in that the light receiving element 270PD and the light emitting element 270R have the same configuration.

[0236] The light receiving element 270PD and the light emitting element 270R commonly have the active layer 273 and the light emitting layer 283R.

[0237] Here, it is preferable that the light receiving element 270PD has the same configuration as a light emitting element that emits light with a wavelength longer than the light to be detected. For example, the light receiving element 270PD configured to detect blue light can have the same configuration as one or both of the light emitting element 270R and the light emitting element 270G. For example, the light receiving element 270PD configured to detect green light can have the same configuration as the light emitting element 270R.

[0238] By making the light receiving element 270PD and the light emitting element 270R have the same configuration, the number of film formation steps and the number of masks can be reduced compared to a configuration in which the light receiving element 270PD and the light emitting element 270R have layers that are made separately from each other. Therefore, the manufacturing process and manufacturing cost of the display device can be reduced.

[0239] Also, by making the light receiving element 270PD and the light emitting element 270R have the same configuration, the margin for misalignment can be narrowed compared to a configuration in which the light receiving element 270PD and the light emitting element 270R have layers that are made separately from each other. Thereby, the aperture ratio of the pixel can be increased, and the light extraction efficiency of the display device can be increased. Thereby, the lifespan of the light emitting element can be extended. Also, the display device can exhibit high brightness. Also, high definition of the display device is possible.

[0240] The light-emitting layer 283R has a light-emitting material that emits red light. The active layer 273 has an organic compound that absorbs light with a shorter wavelength than red light (for example, one or both of green light and blue light). The active layer 273 preferably has an organic compound that is less likely to absorb red light and absorbs light with a shorter wavelength than red light. Thereby, red light is efficiently extracted from the light-emitting element 270R, and the light-receiving element 270PD can detect light with a shorter wavelength than red light with high accuracy.

[0241] In addition, in the display device 280B, an example in which the light-emitting element 270R and the light-receiving element 270PD have the same configuration is shown, but the light-emitting element 270R and the light-receiving element 270PD may each have an optical adjustment layer with a different thickness.

[0242] The display device 280C shown in FIGS. 14A and 14B includes a light-emitting and light-receiving element 270R·PD that emits red (R) light and has a light-receiving function, a light-emitting element 270G that emits green (G) light, and a light-emitting element 270B that emits blue (B) light.

[0243] Each light-emitting element includes a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, a light-emitting layer, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 laminated in this order. The light-emitting element 270G has a light-emitting layer 283G, and the light-emitting element 270B has a light-emitting layer 283B. The light-emitting layer 283G has a light-emitting substance that emits green light, and the light-emitting layer 283B has a light-emitting substance that emits blue light.

[0244] The light-emitting and light-receiving element 270R·PD includes a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, an active layer 273, a light-emitting layer 283R, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 laminated in this order.

[0245] Note that the light-emitting and light-receiving element 270R·PD included in the display device 280C has the same configuration as the light-emitting element 270R and the light-receiving element 270PD included in the display device 280B. Also, the light-emitting elements 270G and 270B included in the display device 280C have the same configuration as the light-emitting elements 270G and 270B included in the display device 280B.

[0246] In FIG. 14A, a case where the light-emitting and light-receiving element 270R·PD functions as a light-emitting element is shown. In FIG. 14A, an example is shown in which the light-emitting element 270B emits blue light, the light-emitting element 270G emits green light, and the light-emitting and light-receiving element 270R·PD emits red light.

[0247] In FIG. 14B, a case where the light-emitting and light-receiving element 270R·PD functions as a light-receiving element is shown. In FIG. 14B, an example is shown in which the light-emitting and light-receiving element 270R·PD detects the blue light emitted by the light-emitting element 270B and the green light emitted by the light-emitting element 270G.

[0248] The light-emitting element 270B, the light-emitting element 270G, and the light-emitting and light-receiving element 270R·PD each have a pixel electrode 271 and a common electrode 275. In the present embodiment, a case where the pixel electrode 271 functions as an anode and the common electrode 275 functions as a cathode will be described as an example.

[0249] In the present embodiment, similar to the light-emitting element, it is described that in the light-emitting and light-receiving element 270R·PD as well, the pixel electrode 271 functions as an anode and the common electrode 275 functions as a cathode. That is, the light-emitting and light-receiving element 270R·PD can detect the light incident on the light-emitting and light-receiving element 270R·PD, generate charges, and extract them as a current by applying a reverse bias between the pixel electrode 271 and the common electrode 275 and driving it.

[0250] Note that the light-emitting and light-receiving element 270R·PD shown in FIGS. 14A and 14B can be configured such that an active layer 273 is added to the light-emitting element. That is, by simply adding a step of forming the active layer 273 to the manufacturing process of the light-emitting element, the light-emitting and light-receiving element 270R·PD can be formed in parallel with the formation of the light-emitting element. Also, the light-emitting element and the light-emitting and light-receiving element can be formed on the same substrate. Therefore, one or both of the imaging function and the sensing function can be imparted to the display unit without significantly increasing the manufacturing process.

[0251] Note that the lamination order of the light-emitting layer 283R and the active layer 273 is not limited. FIGS. 14A and 14B show an example in which the active layer 273 is provided on the hole transport layer 282 and the light-emitting layer 283R is provided on the active layer 273. The light-emitting layer 283R may be provided on the hole transport layer 282 and the active layer 273 may be provided on the light-emitting layer 283R.

[0252] As shown in FIGS. 14A and 14B, the active layer 273 and the light-emitting layer 283R may be in contact with each other. Also, a buffer layer may be sandwiched between the active layer 273 and the light-emitting layer 283R. As the buffer layer, at least one layer among a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole blocking layer, and an electron blocking layer can be used.

[0253] By providing a buffer layer between the active layer 273 and the light-emitting layer 283R, the transfer of excitation energy from the light-emitting layer 283R to the active layer 273 can be suppressed. Also, the optical path length (cavity length) of the microcavity structure can be adjusted using the buffer layer. Therefore, high luminous efficiency can be obtained from the light-emitting and light-receiving element having a buffer layer between the active layer 273 and the light-emitting layer 283R.

[0254] Also, the light-emitting and light-receiving element may not have at least one layer among the hole injection layer 281, the hole transport layer 282, the electron transport layer 284, and the electron injection layer 285. Also, the light-emitting and light-receiving element may have other functional layers such as a hole blocking layer and an electron blocking layer.

[0255] Further, the light-emitting and light-receiving element may not have the active layer 273 and the light-emitting layer 283R, and may have a layer that serves as both a light-emitting layer and an active layer. As the layer that serves as both a light-emitting layer and an active layer, for example, a layer containing three materials, namely, an n-type semiconductor that can be used for the active layer 273, a p-type semiconductor that can be used for the active layer 273, and a light-emitting substance that can be used for the light-emitting layer 283R, can be used.

[0256] Note that it is preferable that the absorption band on the lowest energy side of the absorption spectrum of the mixed material of the n-type semiconductor and the p-type semiconductor does not overlap with the maximum peak of the emission spectrum (PL spectrum) of the light-emitting substance, and it is more preferable that they are sufficiently separated.

[0257] In the light-emitting and light-receiving element, a conductive film that transmits visible light is used for the electrode on the side where light is extracted. Further, it is preferable to use a conductive film that reflects visible light for the electrode on the side where light is not extracted.

[0258] Since the functions and materials of the respective layers constituting the light-emitting and light-receiving element are the same as those of the respective layers constituting the light-emitting element and the light-receiving element, detailed description thereof is omitted.

[0259] Hereinafter, with reference to FIGS. 15 and 16, the detailed configuration of a display device according to an aspect of the present invention will be described.

[0260] [Display device 100A] FIG. 15A shows a cross-sectional view of the display device 100A.

[0261] The display device 100A includes a light-receiving element 110 and a light-emitting element 190.

[0262] The light-emitting element 190 has a pixel electrode 191, a buffer layer 192, a light-emitting layer 193, a buffer layer 194, and a common electrode 115 laminated in this order. The buffer layer 192 can have one or both of a hole injection layer and a hole transport layer. The light-emitting layer 193 has an organic compound. The buffer layer 194 can have one or both of an electron injection layer and an electron transport layer. The light-emitting element 190 has a function of emitting visible light 121. Note that the display device 100A may further have a light-emitting element having a function of emitting infrared light.

[0263] The light-receiving element 110 has a pixel electrode 191, a buffer layer 182, an active layer 183, a buffer layer 184, and a common electrode 115 laminated in this order. The buffer layer 182 can have a hole transport layer. The active layer 183 has an organic compound. The buffer layer 184 can have an electron transport layer. The light-receiving element 110 has a function of detecting visible light. Note that the light-receiving element 110 may further have a function of detecting infrared light.

[0264] In the present embodiment, it is described that in both the light-emitting element 190 and the light-receiving element 110, the pixel electrode 191 functions as an anode and the common electrode 115 functions as a cathode. That is, by driving the light-receiving element 110 with a reverse bias applied between the pixel electrode 191 and the common electrode 115, the display device 100A can detect the light incident on the light-receiving element 110, generate charges, and extract them as a current.

[0265] The pixel electrode 191, the buffer layer 182, the buffer layer 192, the active layer 183, the light-emitting layer 193, the buffer layer 184, the buffer layer 194, and the common electrode 115 may each have a single-layer structure or a laminated structure.

[0266] The pixel electrode 191 is located on the insulating layer 214. Each pixel electrode 191 can be formed of the same material and in the same process. The end portion of the pixel electrode 191 is covered by the partition wall 216. Two adjacent pixel electrodes 191 are electrically insulated from each other (also referred to as electrically separated) by the partition wall 216.

[0267] As the partition wall 216, an organic insulating film is suitable. Examples of materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins. The partition wall 216 is a layer that transmits visible light. Instead of the partition wall 216, a partition wall that blocks visible light may be provided.

[0268] The common electrode 115 is a layer that is commonly used for the light receiving element 110 and the light emitting element 190.

[0269] The materials, film thicknesses, etc. of the pair of electrodes included in the light receiving element 110 and the light emitting element 190 can be made equal. Thereby, the manufacturing cost of the display device can be reduced and the manufacturing process can be simplified.

[0270] The display device 100A includes a light receiving element 110, a light emitting element 190, a transistor 131, a transistor 132, etc. between a pair of substrates (substrate 151 and substrate 152).

[0271] In the light receiving element 110, the buffer layer 182, the active layer 183, and the buffer layer 184, which are respectively located between the pixel electrode 191 and the common electrode 115, can also be referred to as organic layers (layers containing organic compounds). The pixel electrode 191 preferably has a function of reflecting visible light. The common electrode 115 has a function of transmitting visible light. When the light receiving element 110 is configured to detect infrared light, the common electrode 115 has a function of transmitting infrared light. Further, the pixel electrode 191 preferably has a function of reflecting infrared light.

[0272] The light-receiving element 110 has a function of detecting light. Specifically, the light-receiving element 110 is a photoelectric conversion element that receives the light 122 incident from the outside of the display device 100A and converts it into an electrical signal. The light 122 can also be the light reflected by the object from the light emitted by the light-emitting element 190. Further, the light 122 may be incident on the light-receiving element 110 through a lens or the like provided in the display device 100A.

[0273] In the light-emitting element 190, the buffer layer 192, the light-emitting layer 193, and the buffer layer 194, which are respectively located between the pixel electrode 191 and the common electrode 115, can also be collectively referred to as the EL layer. Note that the EL layer has at least the light-emitting layer 193. As described above, the pixel electrode 191 preferably has a function of reflecting visible light. Further, the common electrode 115 has a function of transmitting visible light. Note that when the display device 100A has a configuration including a light-emitting element that emits infrared light, the common electrode 115 has a function of transmitting infrared light. Furthermore, the pixel electrode 191 preferably has a function of reflecting infrared light.

[0274] It is preferable that a microcavity structure is applied to the light-emitting element included in the display device of the present embodiment.

[0275] The buffer layer 192 or the buffer layer 194 may have a function as an optical adjustment layer. By varying the film thickness of the buffer layer 192 or the buffer layer 194, it is possible to enhance and extract light of a specific color in each light-emitting element.

[0276] The light-emitting element 190 has a function of emitting visible light. Specifically, the light-emitting element 190 is an electroluminescent element that emits light toward the substrate 152 side by applying a voltage between the pixel electrode 191 and the common electrode 115 (see visible light 121).

[0277] The pixel electrode 191 included in the light-receiving element 110 is electrically connected to the source or drain of the transistor 131 through an opening provided in the insulating layer 214.

[0278] The pixel electrode 191 of the light-emitting element 190 is electrically connected to the source or drain of the transistor 132 through an opening provided in the insulating layer 214.

[0279] The transistor 131 and the transistor 132 are in contact with each other on the same layer (substrate 151 in FIG. 15A).

[0280] At least a part of the circuit electrically connected to the light-receiving element 110 is preferably formed of the same material and in the same process as the circuit electrically connected to the light-emitting element 190. Thereby, compared with the case where the two circuits are formed separately, the thickness of the display device can be reduced, and the manufacturing process can be simplified.

[0281] The light-receiving element 110 and the light-emitting element 190 are preferably each covered with a protective layer 116. In FIG. 15A, the protective layer 116 is provided in contact with the common electrode 115. By providing the protective layer 116, it is possible to suppress impurities such as water from entering the light-receiving element 110 and the light-emitting element 190, and to improve the reliability of the light-receiving element 110 and the light-emitting element 190. Further, the protective layer 116 and the substrate 152 are bonded together by an adhesive layer 142.

[0282] A light-shielding layer 158 is provided on the surface of the substrate 152 on the side of the substrate 151. The light-shielding layer 158 has openings at positions overlapping the light-emitting element 190 and at positions overlapping the light-receiving element 110.

[0283] Here, the light receiving element 110 detects the light reflected by the object from the light emission of the light emitting element 190. However, the light emission of the light emitting element 190 may be reflected within the display device 100A and incident on the light receiving element 110 without passing through the object. The light shielding layer 158 can suppress the influence of such stray light. For example, when the light shielding layer 158 is not provided, the light 123 emitted by the light emitting element 190 may be reflected by the substrate 152, and the reflected light 124 may be incident on the light receiving element 110. By providing the light shielding layer 158, the incidence of the reflected light 124 on the light receiving element 110 can be suppressed. Thereby, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be enhanced.

[0284] As the light shielding layer 158, a material that blocks the light emission from the light emitting element can be used. The light shielding layer 158 preferably absorbs visible light. As the light shielding layer 158, for example, a black matrix can be formed using a metal material, or a resin material containing a pigment (such as carbon black) or a dye. The light shielding layer 158 may have a laminated structure of a red color filter, a green color filter, and a blue color filter.

[0285] [Display device 100B] Cross-sectional views of the display device 100B are shown in FIGS. 15B and 15C. In the following description of the display device, the description of the same configuration as the previously described display device may be omitted.

[0286] The display device 100B includes a light emitting element 190B, a light emitting element 190G, and a light emitting and receiving element 190R·PD.

[0287] The light emitting element 190B has a pixel electrode 191, a buffer layer 192B, a light emitting layer 193B, a buffer layer 194B, and a common electrode 115 laminated in this order. The light emitting element 190B has a function of emitting blue light 121B.

[0288] The light-emitting element 190G has a pixel electrode 191, a buffer layer 192G, a light-emitting layer 193G, a buffer layer 194G, and a common electrode 115 laminated in this order. The light-emitting element 190G has a function of emitting green light 121G.

[0289] The light-emitting and light-receiving element 190R·PD has a pixel electrode 191, a buffer layer 192R, an active layer 183, a light-emitting layer 193R, a buffer layer 194R, and a common electrode 115 laminated in this order. The light-emitting and light-receiving element 190R·PD has a function of emitting red light 121R and a function of detecting light 122.

[0290] FIG. 15B shows a case where the light-emitting and light-receiving element 190R·PD functions as a light-emitting element. FIG. 15B shows an example in which the light-emitting element 190B emits blue light, the light-emitting element 190G emits green light, and the light-emitting and light-receiving element 190R·PD emits red light.

[0291] FIG. 15C shows a case where the light-emitting and light-receiving element 190R·PD functions as a light-receiving element. FIG. 15C shows an example in which the light-emitting and light-receiving element 190R·PD detects blue light emitted by the light-emitting element 190B and green light emitted by the light-emitting element 190G.

[0292] The display device 100B includes a light-emitting and light-receiving element 190R·PD, a light-emitting element 190G, a light-emitting element 190B, a transistor 132, etc. between a pair of substrates (substrate 151 and substrate 152).

[0293] The pixel electrode 191 is located on the insulating layer 214. Two adjacent pixel electrodes 191 are electrically insulated from each other by a partition wall 216. The pixel electrode 191 is electrically connected to the source or drain of the transistor 132 through an opening provided in the insulating layer 214.

[0294] The light-emitting and light-receiving element and the light-emitting element are preferably each covered with a protective layer 116. Further, the protective layer 116 and the substrate 152 are bonded together by an adhesive layer 142. A light-shielding layer 158 is provided on the surface of the substrate 152 on the side of the substrate 151.

[0295] [Display device 100C] Fig. 16A shows a cross-sectional view of the display device 100C.

[0296] The display device 100C includes a light-receiving element 110 and a light-emitting element 190.

[0297] The light-emitting element 190 includes a pixel electrode 191, a common layer 112, a light-emitting layer 193, a common layer 114, and a common electrode 115 in this order. The common layer 112 can include one or both of a hole injection layer and a hole transport layer. The light-emitting layer 193 includes an organic compound. The common layer 114 can include one or both of an electron injection layer and an electron transport layer. The light-emitting element 190 has a function of emitting visible light. Note that the display device 100C may further include a light-emitting element having a function of emitting infrared light.

[0298] The light-receiving element 110 includes a pixel electrode 191, a common layer 112, an active layer 183, a common layer 114, and a common electrode 115 laminated in this order. The active layer 183 includes an organic compound. The light-receiving element 110 has a function of detecting visible light. Note that the light-receiving element 110 may further have a function of detecting infrared light.

[0299] The pixel electrode 191, the common layer 112, the active layer 183, the light-emitting layer 193, the common layer 114, and the common electrode 115 may each have a single-layer structure or a laminated structure.

[0300] The pixel electrode 191 is located on the insulating layer 214. Two adjacent pixel electrodes 191 are electrically insulated from each other by a partition wall 216. The pixel electrode 191 is electrically connected to the source or drain of the transistor 132 through an opening provided in the insulating layer 214.

[0301] The common layer 112, the common layer 114, and the common electrode 115 are layers that are commonly used for the light receiving element 110 and the light emitting element 190. By making at least a part of the layers constituting the light receiving element 110 and the light emitting element 190 have a common configuration, the manufacturing process of the display device can be reduced, which is preferable.

[0302] The display device 100C has a light receiving element 110, a light emitting element 190, a transistor 131, a transistor 132, etc. between a pair of substrates (substrate 151 and substrate 152).

[0303] The light receiving element 110 and the light emitting element 190 are preferably each covered with a protective layer 116. Also, the protective layer 116 and the substrate 152 are bonded together by an adhesive layer 142.

[0304] A resin layer 159 is provided on the surface of the substrate 152 on the side of the substrate 151. The resin layer 159 is provided at a position overlapping the light emitting element 190 and is not provided at a position overlapping the light receiving element 110.

[0305] The resin layer 159 can be configured, for example, as shown in FIG. 16B, to be provided at a position overlapping the light emitting element 190 and to have an opening 159p at a position overlapping the light receiving element 110. Or, the resin layer 159 can be configured, for example, as shown in FIG. 16C, to be provided in an island shape at a position overlapping the light emitting element 190 and not to be provided at a position overlapping the light receiving element 110.

[0306] A light shielding layer 158 is provided on the surface of the substrate 152 on the side of the substrate 151 and on the surface of the resin layer 159 on the side of the substrate 151. The light shielding layer 158 has openings at positions overlapping the light emitting element 190 and at positions overlapping the light receiving element 110.

[0307] Here, the light receiving element 110 detects the light reflected by the object from the light emission of the light emitting element 190. However, the light emitted from the light emitting element 190 may be reflected within the display device 100C and incident on the light receiving element 110 without passing through the object. The light shielding layer 158 can absorb such stray light and reduce the stray light incident on the light receiving element 110. For example, the light shielding layer 158 can absorb the stray light 123a reflected from the surface of the substrate 151 on the substrate 152 side through the resin layer 159. Further, the light shielding layer 158 can absorb the stray light 123b before reaching the resin layer 159. Thereby, the stray light incident on the light receiving element 110 can be reduced. Therefore, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be enhanced. In particular, it is preferable that the light shielding layer 158 is located at a position close to the light emitting element 190 because stray light can be further reduced. Also, when the light shielding layer 158 is located at a position close to the light emitting element 190, the viewing angle dependency of the display can be suppressed, which is also preferable from the viewpoint of improving the display quality.

[0308] Also, by providing the light shielding layer 158, the range in which the light receiving element 110 detects light can be controlled. When the light shielding layer 158 is located at a position far from the light receiving element 110, the imaging range becomes narrow and the imaging resolution can be enhanced.

[0309] When the resin layer 159 has an opening, the light shielding layer 158 preferably covers at least a part of the opening and at least a part of the side surface of the resin layer 159 exposed at the opening.

[0310] When the resin layer 159 is provided in an island shape, the light shielding layer 158 preferably covers at least a part of the side surface of the resin layer 159.

[0311] Thus, since the light-shielding layer 158 is provided along the shape of the resin layer 159, the distance from the light-shielding layer 158 to the light-emitting element 190 (specifically, the light-emitting region of the light-emitting element 190) is shorter than the distance from the light-shielding layer 158 to the light-receiving element 110 (specifically, the light-receiving region of the light-receiving element 110). Thereby, it is possible to reduce the noise of the sensor, increase the resolution of imaging, and suppress the viewing angle dependency of display. Therefore, both the display quality and the imaging quality in the display device can be improved.

[0312] The resin layer 159 is a layer that transmits the light emitted from the light-emitting element 190. Examples of the material of the resin layer 159 include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins. Note that the structure provided between the substrate 152 and the light-shielding layer 158 is not limited to a resin layer, and an inorganic insulating film or the like may be used. The greater the thickness of the structure, the greater the difference between the distance from the light-shielding layer to the light-receiving element and the distance from the light-shielding layer to the light-emitting element. Since an organic insulating film such as a resin can be easily formed thick, it is suitable as the structure.

[0313] In order to compare the distance from the light-shielding layer 158 to the light-receiving element 110 and the distance from the light-shielding layer 158 to the light-emitting element 190, for example, the shortest distance L1 from the end portion of the light-shielding layer 158 on the light-receiving element 110 side to the common electrode 115 and the shortest distance L2 from the end portion of the light-shielding layer 158 on the light-emitting element 190 side to the common electrode 115 can be used. By the shortest distance L2 being shorter than the shortest distance L1, stray light from the light-emitting element 190 can be suppressed, and the sensitivity of the sensor using the light-receiving element 110 can be increased. In addition, the viewing angle dependency of the display can be suppressed. By the shortest distance L1 being longer than the shortest distance L2, the imaging range of the light-receiving element 110 can be narrowed, and the resolution of imaging can be increased.

[0314] Further, by making the portion of the adhesive layer 142 that overlaps with the light-receiving element 110 thicker than the portion that overlaps with the light-emitting element 190, a difference can be created between the distance from the light-shielding layer 158 to the light-receiving element 110 and the distance from the light-shielding layer 158 to the light-emitting element 190.

[0315] Hereinafter, with reference to FIGS. 17 to 20, a more detailed configuration of the display device according to one embodiment of the present invention will be described.

[0316] [Display device 100D] FIG. 17 shows a perspective view of the display device 100D, and FIG. 18 shows a cross-sectional view of the display device 100D.

[0317] The display device 100D has a configuration in which the substrate 152 and the substrate 151 are bonded together. In FIG. 17, the substrate 152 is indicated by a broken line.

[0318] The display device 100D includes a display unit 162, a circuit 164, wirings 165, etc. FIG. 17 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100D. Therefore, the configuration shown in FIG. 17 can also be referred to as a display module having the display device 100D, an IC (integrated circuit), and an FPC (flexible printed circuit board, Flexible Printed Circuit).

[0319] As the circuit 164, for example, a scanning line driving circuit can be used.

[0320] The wirings 165 have a function of supplying signals and power to the display unit 162 and the circuit 164. The signals and power are input to the wirings 165 from the outside via the FPC 172 or from the IC 173.

[0321] FIG. 17 shows an example in which an IC 173 is provided on a substrate 151 by a COG (Chip On Glass) method, a COF (Chip On Film) method, or the like. As the IC 173, an IC having, for example, a scanning line driving circuit or a signal line driving circuit can be applied. Note that the display device 100D and the display module may be configured not to include an IC. Further, the IC may be mounted on an FPC by a COF method or the like.

[0322] FIG. 18 shows an example of a cross section when a part of the region including the FPC 172, a part of the region including the circuit 164, a part of the region including the display unit 162, and a part of the region including the end portion of the display device 100D shown in FIG. 17 are each cut.

[0323] The display device 100D shown in FIG. 18 includes a transistor 241, a transistor 245, a transistor 246, a transistor 247, a light-emitting element 190B, a light-emitting element 190G, a light-receiving and light-emitting element 190R·PD, etc. between a substrate 151 and a substrate 152.

[0324] The substrate 152 and the protective layer 116 are bonded together by an adhesive layer 142. For sealing the light-emitting element 190B, the light-emitting element 190G, and the light-receiving and light-emitting element 190R·PD, a solid sealing structure, a hollow sealing structure, or the like can be applied. In FIG. 18, the space surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is sealed by the adhesive layer 142, and a solid sealing structure is applied.

[0325] The light-emitting element 190B has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193B, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b included in the transistor 247 through an opening provided in the insulating layer 214. The transistor 247 has a function of controlling driving of the light-emitting element 190B. An end portion of the pixel electrode 191 is covered by a partition wall 216. The pixel electrode 191 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.

[0326] The light-emitting element 190G has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193G, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is connected to a conductive layer 222b included in the transistor 246 through an opening provided in the insulating layer 214. The transistor 246 has a function of controlling the driving of the light-emitting element 190G.

[0327] The light-emitting and light-receiving element 190R·PD has a stacked structure in which a pixel electrode 191, a common layer 112, an active layer 183, a light-emitting layer 193R, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214 side. The pixel electrode 191 is electrically connected to a conductive layer 222b included in the transistor 245 through an opening provided in the insulating layer 214. The transistor 245 has a function of controlling the driving of the light-emitting and light-receiving element 190R·PD.

[0328] The light emitted from the light-emitting element 190B, the light-emitting element 190G, and the light-emitting and light-receiving element 190R·PD is emitted toward the substrate 152 side. Further, light enters the light-emitting and light-receiving element 190R·PD through the substrate 152 and the adhesive layer 142. It is preferable to use a material having high transmittance for visible light for the substrate 152 and the adhesive layer 142.

[0329] The pixel electrodes 191 included in the light-emitting element 190B, the light-emitting element 190G, and the light-emitting and light-receiving element 190R·PD can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are commonly used for the light-emitting element 190B, the light-emitting element 190G, and the light-emitting and light-receiving element 190R·PD. The light-emitting and light-receiving element 190R·PD has a configuration in which an active layer 183 is added to the configuration of a light-emitting element that emits red light. Further, the light-emitting element 190B, the light-emitting element 190G, and the light-emitting and light-receiving element 190R·PD can have the same configuration except that the configurations of the active layer 183 and the light-emitting layers 193 of different colors are different. Thereby, a light-receiving function can be added to the display unit 162 of the display device 100D without significantly increasing the manufacturing process.

[0330] On the surface of the substrate 152 on the side of the substrate 151, a light-shielding layer 158 is provided. The light-shielding layer 158 has openings at positions overlapping with each of the light-emitting element 190B, the light-emitting element 190G, and the light-receiving and emitting element 190R·PD. By providing the light-shielding layer 158, the range in which the light-receiving and emitting element 190R·PD detects light can be controlled. As described above, it is preferable to control the light incident on the light-receiving and emitting element by adjusting the position of the opening of the light-shielding layer provided at the position overlapping with the light-receiving and emitting element 190R·PD. Further, by having the light-shielding layer 158, it is possible to suppress light from directly entering the light-receiving and emitting element 190R·PD from the light-emitting element 190 without passing through an object. Therefore, a sensor with less noise and high sensitivity can be realized.

[0331] The transistors 241, 245, 246, and 247 are all formed on the substrate 151. These transistors can be manufactured by the same material and the same process.

[0332] On the substrate 151, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistors. The insulating layer 214 is provided to cover the transistors and has a function as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0333] It is preferable to use a material in which impurities such as water and hydrogen hardly diffuse in at least one of the insulating layers covering the transistors. Thereby, the insulating layer can function as a barrier layer. With such a configuration, diffusion of impurities from the outside into the transistors can be effectively suppressed, and the reliability of the display device can be improved.

[0334] As the insulating layers 211, 213, and 215, it is preferable to use inorganic insulating films respectively. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, etc. can be used. Also, a hafnium oxide film, a hafnium oxynitride film, a hafnium nitride oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, etc. may be used. Further, two or more of the above-mentioned insulating films may be laminated and used. Note that an underlayer film may be provided between the substrate 151 and the transistor. The above-mentioned inorganic insulating film can also be used for the underlayer film.

[0335] Here, the organic insulating film often has lower barrier properties than the inorganic insulating film. Therefore, it is preferable that the organic insulating film has an opening near the end of the display device 100D. Thereby, it is possible to suppress impurities from entering through the organic insulating film from the end of the display device 100D. Alternatively, the organic insulating film may be formed such that the end of the organic insulating film is inside the end of the display device 100D so that the organic insulating film is not exposed at the end of the display device 100D.

[0336] An organic insulating film is suitable for the insulating layer 214 that functions as a planarization layer. Examples of materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins.

[0337] By providing the protective layer 116 that covers the light-emitting element 190B, the light-emitting element 190G, and the light-receiving and light-emitting element 190R·PD, it is possible to suppress impurities such as water from entering the light-emitting element 190B, the light-emitting element 190G, and the light-receiving and light-emitting element 190R·PD, and improve the reliability of the light-emitting element 190B, the light-emitting element 190G, and the light-receiving and light-emitting element 190R·PD.

[0338] In the region 228 shown in FIG. 18, an opening is formed in the insulating layer 214. Thereby, even when an organic insulating film is used for the insulating layer 214, it is possible to suppress impurities from entering the display unit 162 from the outside through the insulating layer 214. Therefore, the reliability of the display device 100D can be enhanced.

[0339] In the region 228 near the end of the display device 100D, it is preferable that the insulating layer 215 and the protective layer 116 are in contact with each other through the opening of the insulating layer 214. In particular, it is preferable that the inorganic insulating film included in the insulating layer 215 and the inorganic insulating film included in the protective layer 116 are in contact with each other. Thereby, it is possible to suppress impurities from entering the display unit 162 from the outside through the organic insulating film. Therefore, the reliability of the display device 100D can be enhanced.

[0340] The protective layer 116 may be a single layer or a laminated structure. For example, the protective layer 116 may have a laminated structure of an organic insulating film and an inorganic insulating film. At this time, it is preferable that the end of the inorganic insulating film extends outside the end of the organic insulating film.

[0341] The transistors 241, 245, 246, and 247 include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is given to a plurality of layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0342] The structure of the transistor included in the display device of the present embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverse staggered transistor, or the like can be used. Also, either a top gate type or a bottom gate type transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0343] For transistors 241, 245, 246, and 247, a configuration is applied in which the semiconductor layer in which the channel is formed is sandwiched between two gates. The transistor may be driven by connecting the two gates and supplying the same signal thereto. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0344] The crystallinity of the semiconductor material used for the transistor is not particularly limited either, and any of an amorphous semiconductor, a semiconductor having crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or a semiconductor having a crystal region in part) may be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed.

[0345] The semiconductor layer of the transistor preferably contains a metal oxide (also referred to as an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of the silicon include amorphous silicon, crystalline silicon (such as low-temperature polysilicon and single crystal silicon).

[0346] The semiconductor layer preferably contains, for example, indium, one or more elements M (where M is selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0347] In particular, as the semiconductor layer, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO).

[0348] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of the atomic ratio of the metal elements in such an In-M-Zn oxide include a composition of In:M:Zn = 1:1:1 or in the vicinity thereof, In:M:Zn = 1:1:1.2 or in the vicinity thereof, In:M:Zn = 2:1:3 or in the vicinity thereof, In:M:Zn = 3:1:2 or in the vicinity thereof, In:M:Zn = 4:2:3 or in the vicinity thereof, In:M:Zn = 4:2:4.1 or in the vicinity thereof, In:M:Zn = 5:1:3 or in the vicinity thereof, In:M:Zn = 5:1:6 or in the vicinity thereof, In:M:Zn = 5:1:7 or in the vicinity thereof, In:M:Zn = 5:1:8 or in the vicinity thereof, In:M:Zn = 6:1:6 or in the vicinity thereof, In:M:Zn = 5:2:5 or in the vicinity thereof, etc. The composition in the vicinity means a range including ±30% of the desired atomic ratio.

[0349] For example, when the atomic ratio is described as In:Ga:Zn = 4:2:3 or a composition in the vicinity thereof, when the atomic ratio of In is 4, it includes cases where the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. Also, when the atomic ratio is described as In:Ga:Zn = 5:1:6 or a composition in the vicinity thereof, when the atomic ratio of In is 5, it includes cases where the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. Also, when the atomic ratio is described as In:Ga:Zn = 1:1:1 or a composition in the vicinity thereof, when the atomic ratio of In is 1, it includes cases where the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0350] The transistors included in circuit 164 and the transistors included in display unit 162 may have the same structure or different structures. The structures of the plurality of transistors included in circuit 164 may all be the same or there may be two or more types. Similarly, the structures of the plurality of transistors included in display unit 162 may all be the same or there may be two or more types.

[0351] In the region of substrate 151 where substrate 152 does not overlap, connection portion 244 is provided. In connection portion 244, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. On the upper surface of connection portion 244, conductive layer 166 obtained by processing the same conductive film as pixel electrode 191 is exposed. Thereby, connection portion 244 and FPC 172 can be electrically connected via connection layer 242.

[0352] Various optical members can be arranged outside substrate 152. Examples of the optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an antireflection layer, and a condensing film. Also, outside substrate 152, an antistatic film for suppressing dust adhesion, a water-repellent film for making dirt less likely to adhere, a hard coat film for suppressing the occurrence of scratches during use, a shock absorption layer, etc. may be arranged.

[0353] For the substrate 151 and the substrate 152, glass, quartz, ceramic, sapphire, resin, etc. can be used respectively. When using a flexible material for the substrate 151 and the substrate 152, the flexibility of the display device can be enhanced.

[0354] As the adhesive layer, various curable adhesives such as photocurable adhesives like ultraviolet curable adhesives, reaction curable adhesives, thermosetting adhesives, and anaerobic adhesives can be used. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, EVA (ethylene vinyl acetate) resins, etc. In particular, materials with low moisture permeability such as epoxy resins are preferred. Also, a two-component mixed resin may be used. Further, an adhesive sheet or the like may be used.

[0355] As the connection layer, an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), etc. can be used.

[0356] For the configurations and materials of the light-emitting elements 190G, 190B, and the light-receiving and light-emitting element 190R·PD, the above description can be referred to.

[0357] In addition to the gate, source, and drain of the transistor, materials that can be used for the conductive layers such as various wirings and electrodes constituting the display device include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys mainly composed of these metals. A film containing these materials can be used as a single layer or in a laminated structure.

[0358] In addition, as the conductive material having translucency, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, or graphene can be used. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing the metal materials can be used. Alternatively, nitrides of the metal materials (for example, titanium nitride) may be used. When using a metal material, an alloy material (or a nitride thereof), it is preferably made thin enough to have translucency. In addition, a laminated film of the above materials can be used as the conductive layer. For example, a laminated film of an alloy of silver and magnesium and indium tin oxide is preferably used because it can enhance conductivity. These can also be used for conductive layers such as various wirings and electrodes constituting the display device, and conductive layers (conductive layers functioning as pixel electrodes and common electrodes) of light-emitting elements and light-receiving elements (or light-emitting and receiving elements).

[0359] Examples of the insulating material that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.

[0360] [Display Device 100E] FIGS. 19 and 20A show cross-sectional views of the display device 100E. The perspective view of the display device 100E is the same as that of the display device 100D (FIG. 14). FIG. 19 shows an example of a cross-section when a part of the region including the FPC 172, a part of the circuit 164, and a part of the display unit 162 of the display device 100E are each cut. FIG. 20A shows an example of a cross-section when a part of the display unit 162 of the display device 100E is cut. In FIG. 19, an example of a cross-section when a region including the light-receiving element 110 and the light-emitting element 190R that emits red light in the display unit 162 is cut is shown. In FIG. 20A, an example of a cross-section when a region including the light-emitting element 190G that emits green light and the light-emitting element 190B that emits blue light in the display unit 162 is cut is shown.

[0361] The display device 100E shown in FIGS. 19 and 20A includes a transistor 243, a transistor 248, a transistor 249, a transistor 240, a light-emitting element 190R, a light-emitting element 190G, a light-emitting element 190B, a light-receiving element 110, etc. between a substrate 153 and a substrate 154.

[0362] The resin layer 159 and the common electrode 115 are adhered via an adhesive layer 142, and a solid encapsulation structure is applied to the display device 100E.

[0363] The substrate 153 and the insulating layer 212 are bonded by an adhesive layer 155. The substrate 154 and the insulating layer 157 are bonded by an adhesive layer 156.

[0364] As a method for manufacturing the display device 100E, first, a first manufacturing substrate provided with an insulating layer 212, each transistor, a light-receiving element 110, each light-emitting element, etc., and a second manufacturing substrate provided with an insulating layer 157, a resin layer 159, a light-shielding layer 158, etc. are bonded together by an adhesive layer 142. Then, the substrate 153 is attached to the exposed surface after peeling off the first manufacturing substrate, and the substrate 154 is attached to the exposed surface after peeling off the second manufacturing substrate, thereby transposing each component formed on the first manufacturing substrate and the second manufacturing substrate to the substrates 153 and 154. The substrates 153 and 154 preferably each have flexibility. Thereby, the flexibility of the display device 100E can be enhanced.

[0365] For the insulating layer 212 and the insulating layer 157, an inorganic insulating film that can be used for the insulating layer 211, the insulating layer 213, and the insulating layer 215 can be used respectively.

[0366] The light-emitting element 190R has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193R, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214b side. The pixel electrode 191 is connected to the conductive layer 169 through an opening provided in the insulating layer 214b. The conductive layer 169 is connected to the conductive layer 222b included in the transistor 248 through an opening provided in the insulating layer 214a. The conductive layer 222b is connected to the low-resistance region 231n through an opening provided in the insulating layer 215. That is, the pixel electrode 191 is electrically connected to the transistor 248. The transistor 248 has a function of controlling the driving of the light-emitting element 190R.

[0367] Similarly, the light-emitting element 190G has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193G, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214b side. The pixel electrode 191 is electrically connected to the low-resistance region 231n of the transistor 249 through the conductive layer 169 and the conductive layer 222b of the transistor 249. That is, the pixel electrode 191 is electrically connected to the transistor 249. The transistor 249 has a function of controlling the driving of the light-emitting element 190G.

[0368] Then, the light-emitting element 190B has a stacked structure in which a pixel electrode 191, a common layer 112, a light-emitting layer 193B, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214b side. The pixel electrode 191 is electrically connected to the low-resistance region 231n of the transistor 240 through the conductive layer 169 and the conductive layer 222b of the transistor 240. That is, the pixel electrode 191 is electrically connected to the transistor 240. The transistor 240 has a function of controlling the driving of the light-emitting element 190B.

[0369] The light-receiving element 110 has a stacked structure in which a pixel electrode 191, a common layer 112, an active layer 183, a common layer 114, and a common electrode 115 are stacked in this order from the insulating layer 214b side.

[0370] The end portion of the pixel electrode 191 is covered by the partition wall 216. The pixel electrode 191 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.

[0371] The light emitted by the light-emitting elements 190R, 190G, and 190B is emitted toward the substrate 154 side. Further, light enters the light-receiving element 110 through the substrate 154 and the adhesive layer 142. It is preferable to use a material having high transmittance for visible light for the substrate 154.

[0372] Each pixel electrode 191 can be manufactured using the same material and the same process. The common layer 112, the common layer 114, and the common electrode 115 are commonly used for the light-receiving element 110 and the light-emitting elements 190R, 190G, and 190B. The light-receiving element 110 and the light-emitting elements of each color can have the same configuration except that the configurations of the active layer 183 and the light-emitting layer are different. Thereby, the light-receiving element 110 can be incorporated into the display device 100E without significantly increasing the manufacturing process.

[0373] On the surface of the insulating layer 157 on the substrate 153 side, a resin layer 159 and a light-shielding layer 158 are provided. The resin layer 159 is provided at a position overlapping with the light-emitting elements 190R, 190G, and 190B, and is not provided at a position overlapping with the light-receiving element 110. The light-shielding layer 158 is provided to cover the surface of the insulating layer 157 on the substrate 153 side, the side surface of the resin layer 159, and the surface of the resin layer 159 on the substrate 153 side. The light-shielding layer 158 has openings at positions overlapping with the light-receiving element 110 and at positions overlapping with each of the light-emitting elements 190R, 190G, and 190B. By providing the light-shielding layer 158, the range in which the light-receiving element 110 detects light can be controlled. Also, by having the light-shielding layer 158, it is possible to suppress light from directly entering the light-receiving element 110 from the light-emitting elements 190R, 190G, and 190B without passing through an object. Therefore, a sensor with less noise and high sensitivity can be realized. By providing the resin layer 159, the distance from the light-shielding layer 158 to each color light-emitting element is shorter than the distance from the light-shielding layer 158 to the light-receiving element 110. Thereby, while reducing the noise of the sensor, it is possible to suppress the viewing angle dependency of the display. Therefore, both the display quality and the imaging quality can be improved.

[0374] As shown in FIG. 19, the partition wall 216 has an opening between the light-receiving element 110 and the light-emitting element 190R. A light-shielding layer 219a is provided so as to fill the opening. The light-shielding layer 219a is located between the light-receiving element 110 and the light-emitting element 190R. The light-shielding layer 219a absorbs the light emitted by the light-emitting element 190R. Thereby, stray light incident on the light-receiving element 110 can be suppressed.

[0375] The spacer 219b is provided on the partition wall 216 and is located between the light-emitting element 190G and the light-emitting element 190B. It is preferable that the upper surface of the spacer 219b is closer to the light-shielding layer 158 than the upper surface of the light-shielding layer 219a. For example, it is preferable that the sum of the height (thickness) of the partition wall 216 and the height (thickness) of the spacer 219b is larger than the height (thickness) of the light-shielding layer 219a. Thereby, it becomes easy to fill the adhesive layer 142. As shown in FIG. 20A, in a portion where the spacer 219b and the light-shielding layer 158 overlap, the light-shielding layer 158 may be in contact with the common electrode 115 (or the protective layer).

[0376] In the region of the substrate 153 where the substrate 154 does not overlap, a connection portion 244 is provided. In the connection portion 244, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 167, the conductive layer 166, and the connection layer 242. The conductive layer 167 can be obtained by processing the same conductive film as the conductive layer 169. On the upper surface of the connection portion 244, the conductive layer 166 obtained by processing the same conductive film as the pixel electrode 191 is exposed. Thereby, the connection portion 244 and the FPC 172 can be electrically connected via the connection layer 242.

[0377] The transistors 243, 248, 249, and 240 include a semiconductor layer having a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a channel formation region 231i, and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 that covers the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel formation region 231i.

[0378] The conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n through an opening provided in the insulating layer 215. Of the conductive layer 222a and the conductive layer 222b, one functions as a source and the other functions as a drain.

[0379] In FIGS. 19 and 20A, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 and does not overlap with the low resistance region 231n. For example, by processing the insulating layer 225 using the conductive layer 223 as a mask, the structures shown in FIGS. 19 and 20A can be fabricated. In FIGS. 19 and 20A, an insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are respectively connected to the low resistance region 231n through the openings of the insulating layer 215. Further, an insulating layer covering the transistor may be provided on the conductive layer 222a and the conductive layer 222b. [An insulating layer covering the transistor may be provided.

[0380] On the other hand, in the transistor 252 shown in FIG. 20B, an example in which the insulating layer 225 covers the upper surface and the side surface of the semiconductor layer is shown. The conductive layer 222a and the conductive layer 222b are respectively connected to the low resistance region 231n through the openings provided in the insulating layer 225 and the insulating layer 215.

[0381] As described above, in the display device according to one aspect of the present invention, the difference in the distance between the light receiving elements (or light emitting and receiving elements) of the two light emitting elements and the difference in the distance to the openings of the light shielding layer overlapping with the light receiving elements (or light emitting and receiving elements) of the two light emitting elements are different from each other. With such a configuration, the light receiving element or the light emitting and receiving element can receive more light from one of the two light emitting elements than the light from the other. Therefore, for example, in the display device according to one aspect of the present invention, more light derived from the light emitting element used as a light source can be incident on the light receiving element or the light emitting and receiving element.

[0382] [Example of pixel circuit] The display device according to one aspect of the present invention includes, in a display unit, a first pixel circuit having a light receiving element and a second pixel circuit having a light emitting element. The first pixel circuit and the second pixel circuit are respectively arranged in a matrix.

[0383] FIG. 21A shows an example of a first pixel circuit having a light receiving element, and FIG. 21B shows an example of a second pixel circuit having a light emitting element.

[0384] The pixel circuit PIX1 shown in FIG. 21A includes a light receiving element PD, transistors M1, M2, M3, M4, and a capacitor C1. Here, an example using a photodiode as the light receiving element PD is shown.

[0385] The cathode of the light receiving element PD is electrically connected to the wiring V1, and the anode is electrically connected to one of the source or drain of the transistor M1. The gate of the transistor M1 is electrically connected to the wiring TX, and the other of the source or drain is electrically connected to one electrode of the capacitor C1, one of the source or drain of the transistor M2, and the gate of the transistor M3. The gate of the transistor M2 is electrically connected to the wiring RES, and the other of the source or drain is electrically connected to the wiring V2. One of the source or drain of the transistor M3 is electrically connected to the wiring V3, and the other of the source or drain is electrically connected to one of the source or drain of the transistor M4. The gate of the transistor M4 is electrically connected to the wiring SE, and the other of the source or drain is electrically connected to the wiring OUT1.

[0386] Constant potentials are supplied to the wirings V1, V2, and V3, respectively. When driving the light receiving element PD in reverse bias, a potential lower than the potential of the wiring V1 is supplied to the wiring V2. The transistor M2 is controlled by the signal supplied to the wiring RES and has a function of resetting the potential of the node connected to the gate of the transistor M3 to the potential supplied to the wiring V2. The transistor M1 is controlled by the signal supplied to the wiring TX and has a function of controlling the timing at which the potential of the above node changes according to the current flowing through the light receiving element PD. The transistor M3 functions as an amplification transistor that outputs according to the potential of the above node. The transistor M4 is controlled by the signal supplied to the wiring SE and functions as a selection transistor for reading out the output according to the potential of the above node to an external circuit connected to the wiring OUT1.

[0387] The pixel circuit PIX2 shown in FIG. 21B includes a light-emitting element EL, a transistor M5, a transistor M6, a transistor M7, and a capacitor C2. Here, an example using a light-emitting diode is shown as the light-emitting element EL. In particular, it is preferable to use an organic EL element as the light-emitting element EL.

[0388] The gate of transistor M5 is electrically connected to wiring VG, one of the source or drain is electrically connected to wiring VS, and the other of the source or drain is electrically connected to one electrode of capacitor C2 and the gate of transistor M6. One of the source or drain of transistor M6 is electrically connected to wiring V4, and the other is electrically connected to the anode of light-emitting element EL and one of the source or drain of transistor M7. The gate of transistor M7 is electrically connected to wiring MS, and the other of the source or drain is electrically connected to wiring OUT2. The cathode of light-emitting element EL is electrically connected to wiring V5.

[0389] A fixed potential is supplied to each of wiring V4 and wiring V5. The anode side of light-emitting element EL can be set to a high potential, and the cathode side can be set to a potential lower than the anode side. Transistor M5 is controlled by the signal supplied to wiring VG and functions as a selection transistor for controlling the selection state of pixel circuit PIX2. Also, transistor M6 functions as a driving transistor that controls the current flowing through light-emitting element EL according to the potential supplied to its gate. When transistor M5 is in the conductive state, the potential supplied to wiring VS is supplied to the gate of transistor M6, and the emission luminance of light-emitting element EL can be controlled according to that potential. Transistor M7 is controlled by the signal supplied to wiring MS and has a function of outputting the potential between transistor M6 and light-emitting element EL to the outside via wiring OUT2.

[0390] Wiring V1 to which the cathode of light-receiving element PD is electrically connected and wiring V5 to which the cathode of light-emitting element EL is electrically connected can be in the same layer and at the same potential.

[0391] In a display device according to one aspect of the present invention, it is preferable to use transistors (hereinafter also referred to as OS transistors) having a metal oxide (also referred to as an oxide semiconductor) in a semiconductor layer in which channels are formed for all of the transistors included in pixel circuit PIX1 and pixel circuit PIX2. The OS transistor has an extremely small off-current and can hold the electric charge accumulated in a capacitor connected in series with the transistor for a long period of time. Further, by using the OS transistor, the power consumption of the display device can be reduced.

[0392] Alternatively, in a display device according to one aspect of the present invention, it is preferable to use transistors (hereinafter also referred to as Si transistors) having silicon in a semiconductor layer in which channels are formed for all of the transistors included in pixel circuit PIX1 and pixel circuit PIX2. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, it is preferable to use a transistor (hereinafter also referred to as an LTPS transistor) having low temperature poly-silicon (LTPS (Low Temperature Poly-Silicon)) in the semiconductor layer. The LTPS transistor has a high field effect mobility and can operate at high speed.

[0393] Furthermore, by using Si transistors such as LTPS transistors, it becomes easy to fabricate various circuits configured by CMOS circuits on the same substrate as the display unit. As a result, the external circuits mounted on the display device can be simplified, and the component cost and mounting cost can be reduced.

[0394] Alternatively, in a display device according to one aspect of the present invention, it is preferable to use two types of transistors in pixel circuit PIX1. Specifically, pixel circuit PIX1 preferably has an OS transistor and an LTPS transistor. By changing the material of the semiconductor layer according to the functions required for the transistors, the quality of pixel circuit PIX1 can be improved, and the accuracy of sensing and imaging can be enhanced. At this time, either one or both of the OS transistor and the LTPS transistor may be used for pixel circuit PIX2.

[0395] Furthermore, even when two types of transistors (for example, an OS transistor and an LTPS transistor) are used for pixels, by using the LTPS transistor, it becomes easy to fabricate various circuits composed of CMOS circuits on the same substrate as the display unit. As a result, the external circuits mounted on the display device can be simplified, and the component cost and the mounting cost can be reduced.

[0396] A transistor using a metal oxide having a wider bandgap and a lower carrier density than silicon can achieve an extremely small off-current. Therefore, due to the small off-current, it is possible to hold the charges accumulated in the capacitor connected in series with the transistor for a long period of time. Therefore, it is preferable to use an OS transistor for the transistors M1, M2, and M5 connected in series to the capacitor C1 or the capacitor C2, in particular.

[0397] Also, it is preferable to use an Si transistor for the transistor M3. Thereby, the readout operation of the imaging data can be performed at high speed.

[0398] Note that a display device having a first pixel circuit including a light receiving element and a second pixel circuit including a light emitting element in the display unit can be driven in any of a mode for performing image display, a mode for performing imaging, and a mode for simultaneously performing image display and imaging. In the mode for performing image display, for example, a full-color image can be displayed using the light emitting element. Also, in the mode for performing imaging, for example, an imaging image (for example, green monochrome, blue monochrome, etc.) can be displayed using the light emitting element, and imaging can be performed using the light receiving element. In the mode for performing imaging, for example, fingerprint authentication or the like can be performed. Also, in the mode for simultaneously performing image display and imaging, for example, in some pixels, an imaging image can be displayed using the light emitting element, and imaging can be performed using the light receiving element, and in the remaining pixels, a full-color image can be displayed using the light emitting element.

[0399] In FIGS. 21A and 21B, the transistor is shown as an n-channel transistor, but a p-channel transistor can also be used. Further, the transistor is not limited to a single gate and may further have a back gate.

[0400] It is preferable to provide one or more layers having one or both of a transistor and a capacitor at a position overlapping with the light receiving element PD or the light emitting element EL. Thereby, the effective occupation area of each pixel circuit can be reduced, and a high-definition display section can be realized.

[0401] This embodiment can be appropriately combined with other embodiments.

[0402] (Embodiment 3) In this embodiment, a metal oxide (also referred to as an oxide semiconductor) that can be used for the OS transistor described in the above embodiment will be described.

[0403] The metal oxide preferably contains at least indium or zinc. In particular, it preferably contains indium and zinc. In addition to these, it is preferable that aluminum, gallium, yttrium, tin, etc. are contained. Further, one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc. may be contained.

[0404] Further, the metal oxide can be formed by a chemical vapor deposition (CVD) method such as a sputtering method or a metal organic chemical vapor deposition (MOCVD) method, or an atomic layer deposition (ALD) method.

[0405] <Classification of crystal structure> Examples of the crystal structure of the oxide semiconductor include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and poly crystal, etc.

[0406] Note that the crystal structure of the film or substrate can be evaluated using an X-ray diffraction (XRD) spectrum. For example, it can be evaluated using the XRD spectrum obtained by grazing-incidence XRD (GIXD) measurement. Note that the GIXD method is also called the thin film method or the Seemann-Bohlin method.

[0407] For example, in the case of a quartz glass substrate, the shape of the peak in the XRD spectrum is almost symmetric about the left and right. On the other hand, in an IGZO film having a crystal structure, the shape of the peak in the XRD spectrum is asymmetric about the left and right. The fact that the shape of the peak in the XRD spectrum is asymmetric about the left and right indicates the presence of crystals in the film or the substrate. In other words, if the shape of the peak in the XRD spectrum is not symmetric about the left and right, it cannot be said that the film or the substrate is in an amorphous state.

[0408] Also, the crystal structure of the film or substrate can be evaluated by the diffraction pattern (also referred to as the nano beam electron diffraction pattern) observed by the nano beam electron diffraction method (NBED). For example, in the diffraction pattern of a quartz glass substrate, a halo is observed, and it can be confirmed that the quartz glass is in an amorphous state. Also, in the diffraction pattern of an IGZO film formed at room temperature, a spot-like pattern rather than a halo is observed. Therefore, it is presumed that the IGZO film formed at room temperature is in an intermediate state that is neither a crystalline state nor an amorphous state, and it cannot be concluded that it is in an amorphous state.

[0409] <<Structure of Oxide Semiconductor>> Note that when focusing on the structure, the oxide semiconductor may be classified differently from the above. For example, the oxide semiconductor can be divided into a single crystal oxide semiconductor and other non-single crystal oxide semiconductors. Examples of the non-single crystal oxide semiconductor include the above-mentioned CAAC-OS and nc-OS. In addition, the non-single crystal oxide semiconductor includes a polycrystalline oxide semiconductor, a pseudo-amorphous oxide semiconductor (a-like OS: amorphous-like oxide semiconductor), an amorphous oxide semiconductor, and the like.

[0410] Here, the details of the above-mentioned CAAC-OS, nc-OS, and a-like OS will be described.

[0411] [CAAC-OS] CAAC-OS is an oxide semiconductor having a plurality of crystal regions, and the c-axis of the plurality of crystal regions is oriented in a specific direction. Note that the specific direction is the thickness direction of the CAAC-OS film, the normal direction of the surface on which the CAAC-OS film is formed, or the normal direction of the surface of the CAAC-OS film. In addition, the crystal region is a region having periodicity in the atomic arrangement. Note that when the atomic arrangement is regarded as a lattice arrangement, the crystal region is also a region where the lattice arrangements are aligned. Further, CAAC-OS has a region where a plurality of crystal regions are connected in the a-b plane direction, and this region may have strain. Note that the strain refers to a portion where the direction of the lattice arrangement changes between a region where the lattice arrangements are aligned and another region where the lattice arrangements are aligned in the region where the plurality of crystal regions are connected. That is, CAAC-OS is an oxide semiconductor in which the c-axis is oriented and there is no obvious orientation in the a-b plane direction.

[0412] Note that each of the above-mentioned plurality of crystal regions is composed of one or a plurality of minute crystals (crystals having a maximum diameter of less than 10 nm). When a crystal region is composed of one minute crystal, the maximum diameter of the crystal region is less than 10 nm. In addition, when a crystal region is composed of a number of minute crystals, the size of the crystal region may be about several tens of nm.

[0413] In addition, in an In-M-Zn oxide (where element M is one or more selected from aluminum, gallium, yttrium, tin, titanium, etc.), CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium (In) and oxygen (hereinafter referred to as the In layer) and a layer containing element M, zinc (Zn), and oxygen (hereinafter referred to as the (M,Zn) layer) are laminated. Note that indium and element M are mutually substitutable. Therefore, the (M,Zn) layer may contain indium. Also, the In layer may contain element M. Note that the In layer may also contain Zn. The layered structure is observed as a lattice image, for example, in a high-resolution TEM (Transmission Electron Microscope) image.

[0414] When a structural analysis is performed on a CAAC-OS film using, for example, an XRD apparatus, in an Out-of-plane XRD measurement using a θ / 2θ scan, a peak indicating c-axis orientation is detected at 2θ = 31° or in the vicinity thereof. Note that the position (the value of 2θ) of the peak indicating c-axis orientation may vary depending on the type and composition of the metal elements constituting CAAC-OS.

[0415] In addition, for example, in the electron diffraction pattern of a CAAC-OS film, a plurality of bright spots (spots) are observed. Note that one spot and another spot are observed at point-symmetric positions with the spot of the incident electron beam transmitted through the sample (also referred to as the direct spot) as the center of symmetry.

[0416] When observing the crystal region from the specific direction, the lattice arrangement in the crystal region is based on a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be an irregular hexagon. Further, in the above-mentioned strain, there may be a lattice arrangement such as a pentagon or a heptagon. In CAAC-OS, even in the vicinity of the strain, a clear grain boundary cannot be confirmed. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice arrangement. This is presumably because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal atoms.

[0417] A crystal structure in which a clear grain boundary is confirmed is called a so-called polycrystal. Grain boundaries can become recombination centers, and carriers are likely to be trapped, causing a decrease in the on-current of the transistor and a decrease in the field-effect mobility. Therefore, CAAC-OS in which no clear grain boundary is confirmed is one of the crystalline oxides having a crystal structure suitable for the semiconductor layer of the transistor. In addition, for forming CAAC-OS, a configuration having Zn is preferable. For example, In-Zn oxide and In-Ga-Zn oxide are preferable because they can suppress the generation of grain boundaries more than In oxide.

[0418] CAAC-OS is an oxide semiconductor with high crystallinity and no clear grain boundary confirmed. Therefore, it can be said that in CAAC-OS, a decrease in electron mobility due to grain boundaries is unlikely to occur. In addition, since the crystallinity of the oxide semiconductor may decrease due to the incorporation of impurities or the generation of defects, it can also be said that CAAC-OS is an oxide semiconductor with few impurities and defects (such as oxygen deficiency). Therefore, the physical properties of the oxide semiconductor having CAAC-OS are stable. Therefore, the oxide semiconductor having CAAC-OS is resistant to heat and has high reliability. In addition, CAAC-OS is also stable against high temperatures (so-called thermal budget) in the manufacturing process. Therefore, when CAAC-OS is used for the OS transistor, it becomes possible to expand the degree of freedom in the manufacturing process.

[0419] [nc-OS] nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). In other words, nc-OS has minute crystals. Since the size of the minute crystals is, for example, 1 nm or more and 10 nm or less, particularly 1 nm or more and 3 nm or less, the minute crystals are also referred to as nano-crystals. Further, nc-OS has no regularity in the crystal orientation among different nano-crystals. Therefore, no orientation is observed in the entire film. Accordingly, depending on the analysis method, nc-OS may not be distinguishable from a-like OS or an amorphous oxide semiconductor. For example, when a structural analysis is performed on an nc-OS film using an XRD apparatus, no peak indicating crystallinity is detected in the Out-of-plane XRD measurement using θ / 2θ scan. Further, when electron beam diffraction (also referred to as restricted view electron beam diffraction) using an electron beam having a probe diameter larger than that of the nano-crystals (for example, 50 nm or more) is performed on the nc-OS film, a diffraction pattern such as a halo pattern is observed. On the other hand, when electron beam diffraction (also referred to as nano-beam electron beam diffraction) using an electron beam having a probe diameter close to or smaller than that of the nano-crystals (for example, 1 nm or more and 30 nm or less) is performed on the nc-OS film, an electron beam diffraction pattern in which a plurality of spots are observed in a ring-shaped region centered on a direct spot may be obtained.

[0420] [a-like OS] a-like OS is an oxide semiconductor having a structure between nc-OS and an amorphous oxide semiconductor. a-like OS has a loose or low-density region. That is, a-like OS has lower crystallinity compared with nc-OS and CAAC-OS. Further, a-like OS has a higher hydrogen concentration in the film compared with nc-OS and CAAC-OS.

[0421] [[Constitution of Oxide Semiconductor]] Next, the details of the above-described CAC-OS will be described. Note that CAC-OS relates to the material constitution.

[0422] [CAC-OS] CAC-OS is, for example, a component of a material in which the elements constituting the metal oxide are unevenly distributed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or in the vicinity thereof. In the following, in the metal oxide, a state in which one or more metal elements are unevenly distributed and the regions having the metal elements are mixed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or in the vicinity thereof is also referred to as a mosaic state or a patch state.

[0423] Furthermore, CAC-OS becomes a mosaic state by separating the material into a first region and a second region, and the first region is a structure distributed in the film (hereinafter also referred to as a cloud state). That is, CAC-OS is a composite metal oxide having a structure in which the first region and the second region are mixed.

[0424] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting CAC-OS in the In-Ga-Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in CAC-OS in the In-Ga-Zn oxide, the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film. The second region is a region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Or, for example, the first region is a region where [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region. The second region is a region where [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.

[0425] Specifically, the first region is a region mainly composed of indium oxide, indium zinc oxide, etc. The second region is a region mainly composed of gallium oxide, gallium zinc oxide, etc. That is, the first region can be rephrased as a region mainly composed of In. The second region can be rephrased as a region mainly composed of Ga.

[0426] Note that there may be cases where a clear boundary cannot be observed between the above-mentioned first region and the second region.

[0427] In addition, CAC-OS in In-Ga-Zn oxide refers to a structure in a material composition containing In, Ga, Zn, and O, where a region mainly composed of Ga and a region mainly composed of In are each mosaic-shaped and these regions are randomly present. Therefore, it is presumed that CAC-OS has a structure in which metal elements are unevenly distributed.

[0428] CAC-OS can be formed, for example, by a sputtering method under conditions where the substrate is not heated. Also, when forming CAC-OS by a sputtering method, any one or more selected from an inert gas (typically argon), oxygen gas, and nitrogen gas may be used as the film-forming gas. Further, the lower the flow rate ratio of oxygen gas to the total flow rate of the film-forming gas during film formation, the more preferable it is. For example, it is preferable that the flow rate ratio of oxygen gas to the total flow rate of the film-forming gas during film formation is 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0429] Also, for example, in CAC-OS in In-Ga-Zn oxide, it can be confirmed by EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX) that the region mainly composed of In (the first region) and the region mainly composed of Ga (the second region) are unevenly distributed and have a mixed structure.

[0430] Here, the first region is a region with higher conductivity compared to the second region. That is, when carriers flow through the first region, the conductivity as a metal oxide is exhibited. Therefore, when the first region is distributed in a cloud shape in the metal oxide, a high field-effect mobility (μ) can be achieved.

[0431] On the one hand, the second region is a region with higher insulation compared to the first region. That is, by distributing the second region in the metal oxide, the leakage current can be suppressed.

[0432] Therefore, when using CAC-OS in a transistor, the conductivity caused by the first region and the insulation caused by the second region act complementarily, thereby imparting a switching function (On / Off function) to the CAC-OS. That is, CAC-OS has a conductive function in a part of the material and an insulating function in a part of the material, and has a semiconductor function as a whole. By separating the conductive function and the insulating function, both functions can be maximally enhanced. Thus, by using CAC-OS in a transistor, a high on-current (I on )、high field-effect mobility (μ), and good switching operation can be realized.

[0433] In addition, a transistor using CAC-OS has high reliability. Therefore, CAC-OS is optimal for various semiconductor devices including display devices.

[0434] Oxide semiconductors have various structures and each has different characteristics. The oxide semiconductor according to one aspect of the present invention may have two or more of amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, CAC-OS, nc-OS, and CAAC-OS.

[0435] <Transistor having an oxide semiconductor> Subsequently, the case of using the above oxide semiconductor in a transistor will be described.

[0436] By using the above oxide semiconductor in a transistor, a transistor with high field-effect mobility can be realized. Also, a highly reliable transistor can be realized.

[0437] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. For example, the carrier concentration of the oxide semiconductor is 1×10 17 cm -3 or less, preferably 1×10 15 cm -3 or less, more preferably 1×10 13 cm -3 or less, still more preferably 1×10 11 cm -3 or less, even more preferably 1×10 10 cm -3 less than, and 1×10 -9 cm -3 or more. When reducing the carrier concentration of the oxide semiconductor film, the impurity concentration in the oxide semiconductor film may be reduced and the density of defect levels may be reduced. In this specification and the like, a low impurity concentration and a low density of defect levels are referred to as highly pure intrinsic or substantially highly pure intrinsic. In addition, an oxide semiconductor with a low carrier concentration may be referred to as a highly pure intrinsic or substantially highly pure intrinsic oxide semiconductor.

[0438] In addition, since an oxide semiconductor film that is highly pure intrinsic or substantially highly pure intrinsic has a low density of defect levels, the density of trap levels may also be low.

[0439] In addition, the charge trapped in the trap level of the oxide semiconductor may take a long time to disappear and may behave like a fixed charge. Therefore, a transistor in which a channel formation region is formed in an oxide semiconductor with a high trap level density may have unstable electrical characteristics.

[0440] Therefore, in order to stabilize the electrical characteristics of the transistor, it is effective to reduce the impurity concentration in the oxide semiconductor. In addition, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in the adjacent film. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon, and the like.

[0441] <Impurities> Here, the effects of various impurities in the oxide semiconductor will be described.

[0442] In an oxide semiconductor, when silicon or carbon, which is one of the Group 14 elements, is contained, defect levels are formed in the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (the concentration obtained by secondary ion mass spectrometry (SIMS)) are preferably 2×10 18 atoms / cm 3 or less, preferably 2×10 17 atoms / cm 3 or less.

[0443] In addition, when an alkali metal or an alkaline earth metal is contained in the oxide semiconductor, defect levels may be formed and carriers may be generated. Therefore, a transistor using an oxide semiconductor containing an alkali metal or an alkaline earth metal tends to have normally-on characteristics. For this reason, the concentration of the alkali metal or the alkaline earth metal in the oxide semiconductor obtained by SIMS is 1×10 18 atoms / cm 3 or less, preferably 2×10 16 atoms / cm 3 or less.

[0444] In addition, in an oxide semiconductor, when nitrogen is contained, carriers, i.e., electrons, are generated, the carrier concentration increases, and it tends to be n-type. As a result, a transistor using an oxide semiconductor containing nitrogen as the semiconductor tends to have normally-on characteristics. Or, when nitrogen is contained in the oxide semiconductor, trap levels may be formed. As a result, the electrical characteristics of the transistor may become unstable. For this reason, the nitrogen concentration in the oxide semiconductor obtained by SIMS is less than 5×10 19 atoms / cm 3 preferably less than 5×10 18 atoms / cm 3 more preferably 1×10 18 atoms / cm 3Hereinafter, it is more preferably 5×10 17 atoms / cm 3 or less.

[0445] In addition, since hydrogen contained in the oxide semiconductor reacts with oxygen that binds to metal atoms to form water, oxygen deficiency may be formed. When hydrogen enters the oxygen deficiency, carriers such as electrons may be generated. In addition, a part of hydrogen may bind to oxygen that binds to metal atoms to generate carriers such as electrons. Therefore, a transistor using an oxide semiconductor containing hydrogen tends to have normally-on characteristics. For this reason, it is preferable that hydrogen in the oxide semiconductor is reduced as much as possible. Specifically, in the oxide semiconductor, the hydrogen concentration obtained by SIMS is 1×10 20 atoms / cm 3 less than, preferably 1×10 19 atoms / cm 3 less than, more preferably 5×10 18 atoms / cm 3 less than, and even more preferably 1×10 18 atoms / cm 3 or less.

[0446] By using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor, stable electrical characteristics can be imparted.

[0447] This embodiment can be appropriately combined with other embodiments.

[0448] (Embodiment 4) In this embodiment, an electronic device according to an aspect of the present invention will be described with reference to FIGS. 22 to 24.

[0449] An electronic device according to an aspect of the present invention can perform imaging on a display unit and detect touch operations. Thereby, the functionality and convenience of the electronic device can be enhanced.

[0450] Examples of the electronic device according to one aspect of the present invention include, for example, television devices, desktop or notebook personal computers, monitors for computers, digital signage, large game machines such as pachinko machines, and other electronic devices having a relatively large screen, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, portable information terminals, audio playback devices, and the like.

[0451] The electronic device according to one aspect of the present invention may have a sensor (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0452] The electronic device according to one aspect of the present invention can have various functions. For example, it can have a function of displaying various information (such as still images, moving images, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, or time, a function of executing various software (programs), a wireless communication function, a function of reading programs or data recorded on a recording medium, and the like.

[0453] The electronic device 6500 shown in FIG. 22A is a portable information terminal that can be used as a smartphone.

[0454] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0455] The display device shown in Embodiment 2 can be applied to the display unit 6502.

[0456] FIG. 22B is a schematic cross-sectional view including an end portion of the housing 6501 on the side of the microphone 6506.

[0457] A protective member 6510 having translucency is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0458] On the protective member 6510, the display panel 6511, the optical member 6512, and the touch sensor panel 6513 are fixed by an adhesive layer (not shown).

[0459] In a region outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded-back portion. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on the printed circuit board 6517.

[0460] A flexible display according to an aspect of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Further, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted while suppressing the thickness of the electronic device. Further, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, a narrow bezel electronic device can be realized.

[0461] By using the display device shown in Embodiment 2 for the display panel 6511, imaging can be performed by the display unit 6502. For example, a fingerprint can be imaged by the display panel 6511, and fingerprint authentication can be performed.

[0462] Since the display unit 6502 further has a touch sensor panel 6513, a touch panel function can be imparted to the display unit 6502. As the touch sensor panel 6513, various methods such as a capacitance method, a resistive film method, a surface acoustic wave method, an infrared method, an optical method, and a pressure sensitive method can be used. Alternatively, the display panel 6511 may function as a touch sensor, and in that case, the touch sensor panel 6513 may not be provided.

[0463] FIG. 23A shows an example of a television apparatus. In the television apparatus 7100, a display unit 7000 is incorporated in a housing 7101. Here, a configuration in which the housing 7101 is supported by a stand 7103 is shown.

[0464] The display device shown in Embodiment 2 can be applied to the display unit 7000.

[0465] The operation of the television apparatus 7100 shown in FIG. 23A can be performed by an operation switch provided in the housing 7101 or a separate remote control operation unit 7111. Alternatively, the display unit 7000 may be provided with a touch sensor, and the television apparatus 7100 may be operated by touching the display unit 7000 with a finger or the like. The remote control operation unit 7111 may have a display unit that displays information output from the remote control operation unit 7111. Channel and volume operations can be performed by operation keys or a touch panel provided in the remote control operation unit 7111, and the video displayed on the display unit 7000 can be operated.

[0466] Note that the television apparatus 7100 has a configuration including a receiver and a modem. The receiver can receive general television broadcasts. Also, by connecting to a communication network by wire or wirelessly via the modem, one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers) information communication is possible.

[0467] FIG. 23B shows an example of a notebook personal computer. The notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. A display unit 7000 is incorporated in the housing 7211.

[0468] The display device shown in Embodiment 2 can be applied to the display unit 7000.

[0469] FIGS. 23C and 23D show an example of digital signage.

[0470] The digital signage 7300 shown in FIG. 23C includes a housing 7301, a display unit 7000, a speaker 7303, etc. Further, it can include an LED lamp, operation keys (including a power switch or an operation switch), connection terminals, various sensors, a microphone, etc.

[0471] FIG. 23D shows a digital signage 7400 attached to a cylindrical column 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the column 7401.

[0472] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more likely it is to catch people's eyes, for example, enhancing the advertising effect.

[0473] By applying a touch panel to the display unit 7000, not only can an image or video be displayed on the display unit 7000, but also the user can operate it intuitively, which is preferable. Also, when used for applications such as providing route information or traffic information, the usability can be enhanced by intuitive operation.

[0474] Also, as shown in FIGS. 23C and 23D, it is preferable that the digital signage 7300 or the digital signage 7400 can be linked by wireless communication with an information terminal 7311 or an information terminal 7411 such as a smartphone held by the user. For example, the information of the advertisement displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Also, by operating the information terminal 7311 or the information terminal 7411, the display of the display unit 7000 can be switched.

[0475] In FIGS. 23C and 23D, the display device shown in Embodiment 2 can be applied to the display unit of the information terminal 7311 or the information terminal 7411.

[0476] In addition, a game can also be executed on the digital signage 7300 or digital signage 7400, using the screen of the information terminal device 7311 or information terminal device 7411 as an operation means (controller). As a result, an unspecified number of users can participate in and enjoy the game simultaneously.

[0477] The electronic device shown in FIGS. 24A to 24F includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, a sensor 9007 (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, and the like.

[0478] The electronic device shown in FIGS. 24A to 24F has various functions. For example, it can have a function of displaying various information (such as still images, moving images, text images, etc.) on the display unit, a touch panel function, a function of displaying a calendar, date or time, etc., a function of controlling processing by various software (programs), a wireless communication function, a function of reading and processing programs or data recorded on a recording medium, and the like. Note that the functions of the electronic device are not limited to these, and it can have various functions. The electronic device may have a plurality of display units. In addition, the electronic device may be provided with a camera or the like, and have a function of shooting still images and moving images and storing them in a recording medium (external or built-in to the camera), a function of displaying the shot images on the display unit, and the like.

[0479] Details of the electronic device shown in FIGS. 24A to 24F will be described below.

[0480] FIG. 24A is a perspective view showing a mobile information terminal 9101. The mobile information terminal 9101 can be used, for example, as a smartphone. Note that the mobile information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, etc. Further, the mobile information terminal 9101 can display character and image information on a plurality of its surfaces. FIG. 24A shows an example in which three icons 9050 are displayed. Also, information 9051 indicated by a dashed rectangle can be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming calls such as e-mail, SNS, and telephone, titles of e-mail and SNS, sender names, dates, times, remaining battery levels, antenna reception strengths, etc. Alternatively, an icon 9050 or the like may be displayed at the position where the information 9051 is displayed.

[0481] FIG. 24B is a perspective view showing a mobile information terminal 9102. The mobile information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are respectively displayed on different surfaces. For example, the user can also check the information 9053 displayed at a position where it can be observed from above the mobile information terminal 9102 in a state where the mobile information terminal 9102 is stored in the breast pocket of a piece of clothing. The user can check the display without taking the mobile information terminal 9102 out of the pocket and can determine, for example, whether to answer a call.

[0482] FIG. 24C is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used, for example, as a smartwatch. Also, the display surface of the display unit 9001 is provided to be curved, and display can be performed along the curved display surface. Further, the mobile information terminal 9200 can also make a hands-free call by communicating with, for example, a wirelessly communicable headset. Also, the mobile information terminal 9200 can perform data transmission with other information terminals and charging by means of the connection terminal 9006. Note that the charging operation may be performed by wireless power supply.

[0483] Figs. 24D to 24F are perspective views showing the foldable mobile information terminal 9201. Further, Fig. 24D shows the state where the mobile information terminal 9201 is unfolded, Fig. 24F shows the folded state, and Fig. 24E is a perspective view of the state in the middle of changing from one of Fig. 24D and Fig. 24F to the other. The mobile information terminal 9201 has excellent portability in the folded state and excellent display comprehensibility due to a seamless wide display area in the unfolded state. The display unit 9001 included in the mobile information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0484] This embodiment can be appropriately combined with other embodiments.

Description of Reference Numerals

[0485] EL: Light-emitting element, MS: Wiring, PD: Light-receiving element, RES: Wiring, SE: Wiring, TX: Wiring, VG: Wiring, VS: Wiring, 10: Electronic device, 10A: Electronic device, 10B: Electronic device, 11a: Region, 11b: Region, 11c: Region, 11d: Region, 11e: Region, 11f: Region, 11h: Region, 11: Display unit, 12: Icon, 13a: Icon, 13b: Icon, 13c: Icon, 13d: Icon, 21: Index finger, 22: Fingerprint information, 23: Fingerprint information, 24: Thumb, 25: Fingerprint information, 26: Fingerprint information, 27: Index finger, 28: Fingerprint information, 29: Fingerprint information, 30: Control unit, 31: Memory unit, 32: Display unit, 33: Detection unit, 33A: Detection unit, 33B: Detection unit, 40: Index finger, 41: Fingerprint information, 100A: Display device, 100B: Display device, 100C: Display device, 100D: Display device, 100E: Display device, 110: Light-receiving element, 112: Common layer, 114: Common layer, 115: Common electrode, 116: Protection layer, 121B: Light, 121G: Light, 121R: Light, 121: Visible light, 122: Light, 123a: Stray light, 123b: Stray light, 123: Light, 124: Reflected light, 131: Transistor, 132: Transistor, 142: Adhesive layer, 151: Substrate, 152: Substrate, 153: Substrate, 154: Substrate, 155: Adhesive layer, 156: Adhesive layer, 157: Insulating layer, 158: Light-shielding layer, 159p: Opening, 159: Resin layer, 162: Display unit, 164: Circuit, 165: Wiring, 166: Conductive layer, 167: Conductive layer, 169: Conductive layer, 172: FPC, 173: IC, 182: Buffer layer, 183: Active layer, 184: Buffer layer, 190B: Light-emitting element, 190G: Light-emitting element, 190R: Light-emitting element, 190: Light-emitting element, 191: Pixel electrode, 192B: Buffer layer, 192G: Buffer layer, 192R: Buffer layer, 192: Buffer layer, 193B: Light-emitting layer, 193G: Light-emitting layer, 193R: Light-emitting layer, 193: Light-emitting layer, 194B: Buffer layer, 194G: Buffer layer, 194R: Buffer layer, 194: Buffer layer, 200A: Display device, 200B: Display device, 201: Substrate, 202: Finger, 203: Layer having a light-receiving element, 204: Layer having a light-emitting and light-receiving element, 205: Functional layer, 207: Layer having a light-emitting element, 208: Stylus, 209: Substrate, 211: Insulating layer, 212: Insulating layer, 213: Insulating layer, 214a: Insulating layer, 214b: Insulating layer, 214: Insulating layer, 215: Insulating layer, 216: Partition wall219a: Light-shielding layer, 219b: Spacer, 221: Conductive layer, 222a: Conductive layer, 222b: Conductive layer, 223: Conductive layer, 225: Insulating layer, 228: Region, 231i: Channel formation region, 231n: Low-resistance region, 231: Semiconductor layer, 240: Transistor, 241: Transistor, 242: Connection layer, 243: Transistor, 244: Connection part, 245: Transistor, 246: Transistor, 247: Transistor, 248: Transistor, 249: Transistor, 252: Transistor, 261: Contact part, 262: Fingerprint, 266: Locus, 270B: Light-emitting element, 270G: Light-emitting element, 270PD: Light-receiving element, 270R: Light-emitting element, 271: Pixel electrode, 273: Active layer, 275: Common electrode, 280A: Display device, 280B: Display device, 280C: Display device, 281: Hole injection layer, 282: Hole transport layer, 283B: Light-emitting layer, 283G: Light-emitting layer, 283R: Light-emitting layer, 283: Light-emitting layer, 284: Electron transport layer, 285: Electron injection layer, 6500: Electronic device, 6501: Housing, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protection member, 6511: Display panel, 6512: Optical member, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television device, 7101: Housing, 7103: Stand, 7111: Remote control operation unit, 7200: Notebook personal computer, 7211: Housing, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7311: Information terminal device, 7400: Digital signage, 7401: Column, 7411: Information terminal device, 9000: Housing, 9001: Display unit, 9003: Speaker, 9005: Operation key, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

1. An electronic device having a control unit, a display unit, and a storage unit, wherein the display unit has a function of displaying an image on a screen, a function of detecting a touch operation, and a function of simultaneously acquiring first fingerprint information and first position information of a first finger that touched the screen, and second fingerprint information and second position information of a second finger that touched the screen following the first finger; the storage unit has a function of holding third fingerprint information and third position information of the first finger registered in advance, fourth fingerprint information and fourth position information of the second finger, and the order in which the first finger and the second finger touched the screen; the control unit has a function of collating the first fingerprint information with the third fingerprint information, the first position information with the third position information, the second fingerprint information with the fourth fingerprint information, the second position information with the fourth position information, and the order in which the first finger and the second finger touched the screen, and executing a predetermined process when they match.

2. In Claim 1, the first position information and the third position information are one or both of information on the orientation of the first finger and information on the position of the first finger, and the second position information and the fourth position information are one or both of information on the orientation of the second finger and information on the position of the second finger.

Images