Chamber arrangement including backpressure controller, semiconductor processing system including backpressure controller, and method of forming semiconductor structure in chamber arrangement having backpressure controller

Abstract

To provide a chamber arrangement including a chamber body, a mass flow controller (MFC) arrangement, and a bypass conduit.SOLUTION: A MFC arrangement is coupled to a chamber body and includes a first inject MFC device and a second inject MFC device. The first inject MFC device is coupled to the chamber body. The second inject MFC device is coupled to the chamber body and is arranged in parallel in communication with the first MFC device. A bypass conduit has a backpressure controller (BPC) arranged along the bypass conduit, and is arranged in parallel in communication with the chamber body and the MFC arrangement. One of the first inject MFC device and the second inject MFC device is operatively coupled to the BPC. Semiconductor processing systems and methods of forming semiconductor structures are also described.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure generally relates to the formation of semiconductor structures. More specifically, the present disclosure relates to controlling the environment and flow conditions within a chamber configuration used to form semiconductor structures.

Background Art

[0002] Semiconductor structures are generally formed by depositing material layers on a substrate, generally supported within a reactor and formed by exposing the substrate to a material layer precursor while under conditions selected to laminate the material layer precursor on the substrate. In some semiconductor formation processes, variations within specific environmental conditions within the reactor can change the properties of the material layers forming the semiconductor structure. For example, pressure changes within the reactor in a semiconductor structure can change the properties within a particular semiconductor structure. Also, variations in the flow rate of fluids introduced into the reactor during the formation of a semiconductor structure can also change the properties of a particular semiconductor structure.

[0003] Systems and methods for forming such semiconductor structures have generally been considered suitable for their intended purposes. However, in the art, there remains a need for improved chamber configurations, semiconductor process systems having chamber configurations, and related methods for forming semiconductor structures in the chamber configurations of semiconductor processing systems. The present disclosure provides a solution to this need.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Means for Solving the Problems

[0005] A chamber structure is provided. The chamber structure includes a chamber body, a mass flow controller (MFC) structure, and a bypass conduit. The MFC structure is connected to the chamber body and includes a first MFC device and a second MFC device. The first injection MFC device is connected to the chamber body, the second injection MFC device is connected to the chamber body, is arranged in parallel and communicates with the first injection MFC device. The bypass conduit communicates with the chamber body and the MFC structure and is arranged in parallel. A backflow controller (BPC) is arranged along the bypass conduit, and one of the first injection MFC device and the second injection MFC device is operably connected to the BPC.

[0006] In addition to, or as an alternative to, one or more of the above configurations, a further example of the chamber structure may include a configuration in which only one of the first injection MFC device and the second injection MFC device is provided with a pressure sensor.

[0007] In addition to, or as an alternative to, one or more of the above configurations, a further example of the chamber structure may include a configuration including an exhaust conduit connected to the chamber body and a supply conduit connected to the MFC structure. The MFC structure and the chamber body may be configured to fluidly connect the supply conduit in series with the exhaust conduit.

[0008] In addition to, or as an alternative to, one or more of the above configurations, a further example of the chamber structure may include a configuration including a process fluid diverter valve arranged along the supply conduit and a joint or connection arranged along the exhaust conduit. The bypass conduit may be configured to connect the joint or connection to the process fluid diverter valve.

[0009] In addition to or as an alternative to one or more of the above configurations, a further example of a chamber configuration may be a configuration that includes a process fluid diverter valve being a first process fluid diverter valve, and the chamber configuration further includes a second process fluid diverter valve connected to and through a supply conduit to an MFC configuration, a first process fluid source including a silicon-containing material layer precursor source connected to the first process fluid diverter valve, and a second process fluid source including an etchant connected to the second process fluid diverter valve.

[0010] In addition to or as an alternative to one or more of the above configurations, a further example of a chamber configuration may be a configuration that includes a chamber pressure sensor disposed along an exhaust conduit and a pressure control valve. The pressure control valve may be disposed along the exhaust conduit. The pressure control valve may be connected to the chamber body by the chamber pressure sensor.

[0011] In addition to or as an alternative to one or more of the above configurations, a further example of a chamber configuration may be a configuration that includes a first injection MFC device having a housing that supports an inlet port, an outlet port, and a signal port, a flow sensor disposed within the housing and connected to the inlet port, and a flow control valve disposed within the housing and connecting the flow sensor to the outlet port. The first injection MFC local controller may be disposed within the housing and connected to the signal port to communicate a first injection MFC flow measurement value to a system controller through the signal port and receive a first injection MFC flow setpoint through the signal port.

[0012] In addition to one or more of the above features, or alternatively, a further example of the chamber configuration may be a configuration comprising at least one of a jumper lead connecting a flow sensor to a signal port for relaying a first injection MFC flow measurement value to a system controller through the signal port and receiving a first injection MFC flow setpoint from the system controller through the signal port, and a jumper module recorded in the memory of the first injection MFC local controller.

[0013] In addition to one or more of the above features, or alternatively, a further example of the chamber configuration may be a configuration including a configuration in which a second injection MFC device includes a housing supporting an inlet port, an outlet port, and a signal port, a pressure sensor disposed within the housing and connected to the inlet port, a flow sensor disposed within the housing and connected to the pressure sensor, and a flow control valve disposed within the housing and connecting the flow sensor to the outlet port. The second injection MFC local controller may be disposed within the housing and connected to the signal port to communicate a supply pressure measurement value and a first injection MFC flow measurement value to the system controller through the signal port and receive a second injection MFC flow setpoint through the signal port.

[0014] In addition to one or more of the above features, or alternatively, a further example of the chamber configuration may be a configuration comprising at least one of a jumper lead connecting a flow sensor to a signal port for relaying a supply pressure measurement value and a second injection MFC device flow measurement value to a system controller and receiving a second injection MFC flow setpoint from the system controller, and a jumper module recorded in the memory included in the second injection MFC local controller.

[0015] In addition to, or alternatively to, one or more of the above features, a further example of a chamber configuration may be a configuration comprising a housing that supports a BPC with an inlet port, an outlet port, and a signal port, a capacitive manometer disposed within the housing and connected to the inlet port, a flow control valve disposed within the housing that connects the capacitive manometer to the outlet port, and a BPC local controller disposed within the housing connected to the signal port. The BPC local controller may be configured to receive a backpressure setpoint from a system controller through the signal port, receive a backpressure measurement value from the capacitive manometer, compare the backpressure measurement value with the backpressure setpoint, and adjust the throttle backpressure in a bypass conduit when the backpressure measurement value is greater than the backpressure setpoint by a predetermined backpressure difference value in response to instructions recorded in a memory.

[0016] A semiconductor processing system is provided. The semiconductor processing system includes a chamber configuration as described above, wherein an MFC configuration fluidly couples a supply conduit to an exhaust conduit, a process fluid diverter valve disposed along the supply conduit, and a junction or connection disposed along the exhaust conduit, wherein the bypass conduit connects the process fluid diverter valve to the junction or connection, and a system controller. The system controller operably couples the MFC configuration to the BPC and, in response to instructions recorded in a memory, receives a supply pressure measurement value from the MFC configuration obtained by one of a first injection MFC device and a second injection MFC device, receives a supply-to-bypass difference value, determines a backpressure setpoint using the supply pressure measurement value and the supply-to-bypass difference value, and communicates the backpressure setpoint to the BPC using the supply pressure measurement value to adjust the backpressure in the bypass conduit.

[0017] In addition to one or more of the above configurations, or alternatively, a further example of a semiconductor processing system is that instructions recorded in a memory cause a controller to obtain a first injection MFC device flow rate measurement value of a first process fluid when the first process fluid passes through a first injection MFC device, obtain a second injection MFC device flow rate measurement value of the first process fluid when the first process fluid passes through the second injection MFC device, determine a first injection MFC device set value using the first injection MFC device flow rate measurement value and the second injection MFC device flow rate measurement value, determine a second injection MFC device set value using the first injection MFC device flow rate measurement value and the second injection MFC device flow rate measurement value, and communicate the first injection MFC device set value to the first injection MFC device and the second injection MFC device set value to the second MFC device.

[0018] In addition to one or more of the above configurations, or alternatively, a further example of a semiconductor processing system may be a configuration that includes determining a backpressure set value by adding a supply-to-bypass difference value to a supply pressure measurement value.

[0019] In addition to one or more of the above features, or alternatively, a further example of a semiconductor processing system may be a configuration that includes a configuration in which the supply-to-bypass difference value is zero.

[0020] In addition to one or more of the above features, or alternatively, a further example of a semiconductor processing system may be a configuration that includes a configuration in which the supply-to-bypass difference value is a non-zero value.

[0021] A method of forming a semiconductor structure is provided. The method includes placing a substrate in a chamber body, flowing a first process fluid into the chamber body using the first injection MFC device and the second injection MFC device, forming a semiconductor structure on the substrate using the first process fluid, and adjusting the back pressure in a bypass conduit disposed in parallel communication with a chamber configuration using an MFC configuration and a BPC using a supply pressure measurement value obtained by one of the first injection MFC device and the second injection MFC device.

[0022] In addition to, or alternatively to, one or more of the above configurations, a further example of the method may include a configuration in which the first process fluid includes a silicon-containing material layer precursor and the second process fluid includes an etchant. The method may further include stopping the flow of the first process fluid to the chamber configuration, switching the flow of the second process fluid from the bypass conduit to the chamber configuration, and removing a portion of the silicon-containing material layer deposited on the substrate using the second process fluid using the first process fluid.

[0023] In addition to, or alternatively to, one or more of the above configurations, a further example of the method may include a configuration in which the first injection MFC device does not include a pressure sensor. Adjusting the pressure in the bypass conduit may include obtaining a supply pressure measurement value using the second injection MFC device, determining a back pressure set value using the supply pressure measurement value and a supply-to-bypass pressure difference value, receiving the back pressure set value with the BPC, and adjusting the back pressure in the bypass conduit according to the back pressure set value during deposition of the material layer on the substrate.

[0024] In addition to, or alternatively to, one or more of the above configurations, a further example of the method may include obtaining a first injection MFC device flow measurement value of the first process fluid as the first process fluid passes through the first injection MFC device, obtaining a second injection MFC device flow measurement value of the first process fluid as the first process fluid passes through the second injection MFC device, using the first injection MFC device flow measurement value and the second injection MFC device flow measurement value to determine a first injection MFC device setpoint, using the first injection MFC device flow measurement value and the second injection MFC device flow measurement value to determine a second injection MFC device setpoint, and communicating the first injection MFC device setpoint to the first injection MFC device and the second injection MFC device setpoint to the second injection MFC device.

[0025] Provide a semiconductor structure. The semiconductor device structure may be formed using a method of forming a semiconductor structure.

[0026] Provide a semiconductor device. The semiconductor device may be configured to include a semiconductor structure formed using a method of forming a semiconductor structure. The semiconductor device may have a gate all-around architecture, a finned architecture, or a three-dimensional dynamic random access memory architecture.

[0027] This summary is provided to introduce selected concepts in a simplified form. These concepts are described in more detail in the following detailed description of examples of the present disclosure. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0028] These and other configurations, aspects, and effects of the invention disclosed in the present disclosure are described below with reference to the drawings of certain embodiments, which are intended to illustrate the invention by way of example and not to limit the invention.

Brief Description of the Drawings

[0029]

Figure 1

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DETAILED DESCRIPTION OF THE INVENTION

[0030] It should be understood that the elements in the figures are illustrated for simplicity and clarity and are not necessarily drawn to scale. For example, the relative sizes of some of the elements in the figures may be exaggerated compared to other elements to assist in the understanding of the illustrated embodiments of the present disclosure.

[0031] Reference will now be made to the drawings as appropriate, and like reference numerals will be used to indicate like components and aspects of the present disclosure. FIG. 1 shows, by way of illustration and not limitation, a partial view of an example of a chamber structure of a semiconductor processing system according to the present disclosure. This chamber structure is generally designated by reference numeral 104. Other examples or aspects of a chamber structure, a semiconductor processing system including the chamber structure, and a method of depositing a material layer in a semiconductor processing system according to the present disclosure are shown in FIGS. 2-15 and will be described later. The systems and methods of the present disclosure may be used to control fluid flow within a semiconductor processing system for forming semiconductor structures such as semiconductor structures having a silicon-containing material layer deposited using epitaxial deposition techniques, but the present disclosure is not particularly limited to any type of semiconductor structure or material layer having a particular composition.

[0032] As used herein, the term "substrate" may refer to any one or more underlying materials, which may be modified, or any one or more underlying materials such as any one or more underlying materials on which devices, circuits, or films can be formed. The substrate may be continuous or discontinuous, rigid or flexible, solid or porous, or combinations thereof. The substrate may be in any form (but not limited to) such as powder, plate, or workpiece. The substrate in the form of a plate may include wafers of various shapes and sizes such as, for example, 300 millimeter wafers. The substrate may be formed from semiconductor materials such as, for example, silicon (Si), silicon germanium (SiGe), silicon dioxide (SiO2), gallium arsenide (GaAs), gallium nitride (GaN), silicon carbide (SiC), etc. The substrate may have a pattern or may be a substrate without a pattern such as a blanket type. As an example, the substrate in the form of powder may have applications for pharmaceutical manufacturing. The porous substrate may include one or more polymers. Examples of workpieces include medical devices (e.g., stents and syringes), jewelry, touring devices, components for battery manufacturing (e.g., negative electrodes, positive electrodes, or separators), or components of a photovoltaic cell. The continuous substrate may extend beyond the boundaries of the process chamber where the deposition process occurs. In some processes, the continuous substrate may be configured to move through the process chamber and the process may continue until the end of the substrate is reached. The continuous substrate may be supplied from a continuous substrate feeding system to enable the manufacture and production of the continuous substrate in any suitable form. Non-limiting examples of the continuous substrate may include sheets, non-woven membranes, rolls, foils, webs, flexible materials, bundles of continuous filaments, or fibers (e.g., ceramic fibers or polymer fibers). The continuous substrate may also include a carrier or sheet with one or more discontinuous substrates placed thereon.

[0033] Referring to FIG. 1, a semiconductor processing system 100 is shown. The semiconductor processing system 100 generally includes a process fluid source 102, a chamber assembly 104, and an exhaust source 106. Also, in the illustrated example, the semiconductor processing system 100 includes a backpressure controller 108 and a system controller 110. The process fluid source 102 is connected to the chamber assembly 104 by a supply conduit 112 and is configured to flow a process fluid 10 into the chamber assembly 104. The chamber assembly 104 includes a substrate support 114 and is connected to the exhaust source 106 by an exhaust conduit 116. The chamber assembly 104 is configured to expose the substrate 2 to the process fluid 10 under conditions (e.g., temperature and pressure) for placing the substrate 2 therein and depositing a material layer 4 on the substrate 2. The exhaust source 106 is connected to an external environment 12 outside the semiconductor processing system 100 and is configured to flow a residual material layer precursor of the fluid and / or a reaction product 14 generated by the chamber assembly 104 into the external environment 12. In this regard, the exhaust source 106 may be configured with one or more vacuum pumps and / or abatement devices, and the one or more vacuum pumps are configured and adapted to maintain a reduced pressure within the interior 118 of the chamber assembly 104.

[0034] The backpressure controller 108 is disposed along a bypass conduit 120 and connects the process fluid source 102 to the exhaust conduit 116. In this regard, it is conceivable to dispose the backpressure controller 108 in communication and in parallel with the chamber assembly 104 between the process fluid source 102 and the exhaust source 106. Further, it is also conceivable to configure the backpressure controller 108 to attenuate the backpressure within the bypass conduit 120 using a backpressure setpoint 16 received from the system controller 110. On the other hand, the system controller 110 is configured to communicate with the backpressure controller 108 and the supply pressure sensor 122, for example via a wired or wireless link 124, to determine the backpressure setpoint 16 using a supply pressure measurement 18 obtained by the supply pressure sensor 122 and a predetermined supply-to-bypass pressure difference value 20.

[0035] In certain examples, the predetermined supply-to-bypass pressure difference value 20 may be zero. As will be understood by those skilled in the art in view of the present disclosure, setting the predetermined supply-to-bypass pressure difference value to zero can limit the pressure changes that may occur as the flow of the process fluid 10 enters the interior 118 of the chamber assembly 104. By limiting the pressure changes within the interior 118 of the chamber assembly 104, interference with the flow pattern 22 defined within the interior 118 of the chamber assembly 104 is limited, and fluctuations within the material layer 4 that may occur as the flow of the process fluid 10 enters the interior 118 of the chamber assembly 104 can be limited (or eliminated). According to certain examples of the present disclosure, the predetermined supply-to-bypass pressure difference value 20 may be a non-zero value, for example, a positive or negative value. Also, as will be understood by those skilled in the art in view of the present disclosure, for example, using a positive predetermined supply-to-bypass pressure difference value selected to limit the residence time of the process at the edge of the material layer thickness change (e.g., at the edge of the substrate 2), or dopant thickness variations (e.g., using a selected negative predetermined supply-to-bypass pressure difference value to cause the process fluid 10 to reside at the edge of the substrate 2 upon introduction into the interior 118 of the chamber assembly 104), etc., the predetermined supply-to-bypass pressure difference value can also be configured to impart desirable properties to the material layer 4. As further understood by those skilled in the art in view of the present disclosure, other process adjustment effects may also be configured to be imparted to the processing of the substrate 2 within the chamber assembly 104 using the predetermined supply-to-bypass pressure difference value 20, and such configurations may also remain within the scope of the present disclosure.

[0036] Referring to FIG. 2, the backpressure controller 108 and the system controller 110 according to an example of the present disclosure are illustrated. In the illustrated example, the backpressure controller 108 includes a housing 126, an inlet port 128, an outlet port 130, and a signal port 132. As illustrated and described in the present disclosure, the backpressure controller 108 further includes a capacitive manometer 134, a flow control valve 136, an actuator 138, and a BPC local controller 140. The housing 126 supports the inlet port 128, the outlet port 130, and the signal port 132. The inlet port 128 connects the outlet port 130 to a process fluid source 102 (shown in FIG. 1). The outlet port 130 is connected to the inlet port 128 by a fluid channel 142 extending through the housing 126 and connects the inlet port 128 to an exhaust source 106 (shown in FIG. 1). The signal port 132 provides communication between the BPC local controller 140 and the system controller 110 and may be connected to the system controller 110 by a wired or wireless link 124 in this regard. The BPC local controller 140 may be configured to be installed inside the housing 126 and communicate with the capacitive manometer 134 to receive a backpressure measurement value 24 from the capacitive manometer 134 indicating the backpressure in the bypass conduit 120. It is also conceivable to operably connect the BPC local controller 140 to the flow control valve 136 via, for example, the actuator 138.

[0037] The capacitive manometer 134 is arranged along the fluid channel 142 and connects the flow control valve 136 to the inlet port 128. The capacitive manometer 134 is further connected to the BPC local controller 140 by the manometer lead wire 144 and is configured to obtain the back pressure measurement value 24. Also, the flow control valve 136 is disposed along the fluid channel 142 and fluidly connects the capacitive manometer 134 to the outlet port 130. It is conceivable to configure the flow control valve 136 to adjust the back pressure in the bypass conduit 120, for example, by increasing or decreasing the effective flow area in the bypass conduit 120. This adjustment may be achieved by the actuator 138. The actuator 138 may be configured to be mechanically connected to the flow control valve 136 via, for example, a link or linkage, and may be connected to the BPC local controller 140 by the actuator lead 146 to receive the drive signal 148 from the BPC local controller 140. An example of a suitable capacitive manometer is the Baratron® manometer available from MKS Instruments Inc., of Andover, Massachusetts.

[0038] The BPC local controller 140 may be configured to include a BPC device interface, a BPC processor, and a BPC memory. The BPC device interface may be configured to connect the BPC processor to the signal port 132, the manometer lead 144, and the actuator lead 146. The BPC memory is a non-transitory machine-readable medium that stores a plurality of program modules recorded thereon, and when read by the BPC processor, causes the BPC processor to perform certain operations to control the back pressure in the bypass conduit 120. The operations include (a) receiving the back pressure setpoint 16 from the system controller 110, (b) receiving the back pressure measurement 24 from the capacitive manometer 134, and (c) using a look-up table recorded in the BPC memory, etc. When the back pressure measurement 24 differs from the back pressure setpoint 16 by more than a predetermined difference, operations such as adjusting the effective flow area defined by the flow control valve 136 are included. As those skilled in the art will understand in view of the present disclosure, by the foregoing operations, the BPC 108 can dynamically adjust the back pressure in the bypass conduit 120 according to, for example, two or more back pressure setpoints during the deposition of the material layer 4 (shown in FIG. 1) onto the substrate 2 (shown in FIG. 1). In this regard, the BPC 108 may be configured to maintain a first back pressure in the bypass conduit 120 during the deposition step of the process recipe, such as during the deposition of the material layer 4 using a periodic deposition / etching technique, and to maintain a second back pressure in the bypass conduit 120 during the etching step of the process recipe.

[0039] The chamber assembly 104 (shown in FIG. 1) may be configured to include a pressure switch 150, for example, to protect the BPC 108 from overpressure and / or backflow of fluid from the exhaust conduit 116 to the supply conduit 112 via the bypass conduit 120. The pressure switch 150 may be disposed along the bypass conduit 120 and configured to communicate and separate the process fluid source 102 (shown in FIG. 1) from the exhaust source 106 (shown in FIG. 1) when the pressure within the bypass conduit 120 exceeds a predetermined pressure, for example, a pressure that may require calibration of the BPC 108. In a particular example, the pressure switch 150 may be configured to connect the BPC 108 to the process fluid source 102, and according to a particular example, the pressure switch 150 may be configured to connect the BPC 108 to the exhaust source 106. Also, the pressure switch 150 may be considered to be configured as one of a pair of backpressure switches that connect the BPC to both the process fluid source 102 and the exhaust source 106. According to a particular example, the pressure switch 150 may be configured to cooperate with an interlock circuit. As will be appreciated by those skilled in the art in view of the present disclosure, for example, by protecting the BPC 108 with the pressure switch 150 by limiting the risk of exposure of the BPC 108 to pressures outside the range where recalibration of the BPC 108 is expected, such as during a maintenance event where the chamber assembly 104 (shown in FIG. 1) is purged with a relatively high-pressure inert gas, the reliability of the semiconductor processing system 100 (shown in FIG. 1) can be improved.

[0040] The chamber structure 104 (shown in FIG. 1) may be configured to include a first shut-off valve 152 and a second shut-off valve 154. The first shut-off valve 152 may be configured to connect the BPC 108 to the process fluid source 102 (shown in FIG. 1), or may be configured to communicate and separate the BPC 108 from the process fluid source 102. The second shut-off valve 154 may be configured to connect the BPC 108 to the exhaust source 106 and fluidly separate the BPC 108 from the exhaust source 106. In a specific example, the pressure switch 150 may be configured to fluidly connect the BPC 108 to the first shut-off valve 152. According to a specific example, the second shut-off valve 154 may be configured to fluidly connect the pressure switch 150 to the exhaust source 106 (shown in FIG. 1). In a specific example of the present disclosure, either (or both) of the first shut-off valve 152 and the second shut-off valve 154 may include a manual actuator or a solenoid actuator, and may be configured to facilitate the operation of the first shut-off valve 152 and the second shut-off valve 154 in settings where administrative lockout / tagout is used as well as settings where remote maintenance is used. As those skilled in the art will understand in view of the present disclosure, if the first shut-off valve 152 and the second shut-off valve 154 are configured to enable the pressure switch 150 to communicate and separate from the process fluid source 102 and the exhaust source 106, malfunction of the pressure switch 150 during a maintenance event in which relatively high-pressure fluid is introduced into the chamber event can be suppressed.

[0041] In the illustrated example, system controller 110 includes device interface 156, user interface 158, processor 160, and memory 162. Device interface 156 couples processor 160 to wired or wireless link 124 through which it is coupled to supply pressure sensor 122 and BPC 108. Processor 160 is operably connected to user interface 158 and configured to receive user input and / or provide user output via user interface 158, and is arranged to communicate with memory 162. Memory 162 includes a non-transitory machine-readable medium that records a plurality of program modules 164 that, when read by processor 160, cause processor 160 to perform certain operations. Those operations include, as will be described below, the operations of material layer deposition method 200 (shown in FIG. 8). Although illustrated and described in this disclosure as having a particular architecture, controller 110 may have a different configuration (e.g., a distributed computing architecture) in other examples, and it will be understood that such configurations are also within the scope of this disclosure.

[0042] Referring to FIG. 3, a process fluid source 102 is shown. In the illustrated example, the process fluid source 102 includes a first process fluid source 166 and a second process fluid source 168. The first process fluid source 166 houses a first process fluid 10 and is configured to flow the flow of the first process fluid 10 to a first process fluid mass flow controller (MFC) device 170 and then through it to a first process fluid diverter valve 172 according to a first process fluid mass flow setpoint 28. The first process fluid MFC device 170 connects the first process fluid source 166 to the first process fluid diverter valve 172 and is arranged to communicate with a system controller 110, for example, via a wired or wireless link 124, and may be configured to receive the first process fluid mass flow setpoint 28 therefrom. The first process fluid diverter valve 172 then connects the first process fluid MFC device 170 to a supply conduit 112 and through it to a chamber assembly 104 (shown in FIG. 1) and a bypass conduit 120. The first process fluid diverter valve 172 can be operably connected to the system controller 110, for example, via a wired or wireless link 124, and configured to direct the flow of the first process fluid 10 between the supply conduit 112 and the bypass conduit 120. As those skilled in the art will appreciate in view of the present disclosure, by switching the flow of the first process fluid 10 between the supply conduit 112 and the bypass conduit 120, the stabilization time required to obtain a reliable mass flow rate of the first process fluid 10 communicated by the first process fluid MFC device 170 can be reduced, so that the throughput of the semiconductor processing system 100 (shown in FIG. 1) can be increased. It is also conceivable to configure one or more isolation valves to fluidly connect the first process fluid source 166 to the supply conduit 112 to facilitate, for example, the maintenance of the semiconductor processing system 100 (illustrated in FIG. 1).

[0043] The second process fluid source 168 comprises a second process fluid 26, flows the flow of the second process fluid 26 to the second process fluid MFC device 174, and is configured to flow it through to the second process fluid diverter valve 176 according to the second process fluid mass flow setpoint 32. The second process fluid MFC device 174 connects the second process fluid source 168 to the second process fluid diverter valve 176. Also, the second process fluid MFC device 174 is arranged to communicate with the system controller 110 via, for example, a wired or wireless link 124, and may be configured to flow the second process fluid 26 to the second process fluid diverter valve 176 according to the second process fluid mass flow setpoint 32. Thereby, the second process fluid diverter valve 176 may be configured to connect the second process fluid MFC device 174 to the supply conduit 112 and through it to the chamber assembly 104 (shown in FIG. 1) as well as to the bypass conduit 120. Also, the second process fluid diverter valve 176 may be operably connected to the system controller 110 via, for example, a wired or wireless link 124, and may be configured to switch the flow of the second process fluid 26 between the supply conduit 112 and the bypass conduit 120. Also, as will be understood by those skilled in the art in view of the present disclosure, by reversing the flow of the second process fluid 26 between the supply conduit 112 and the bypass conduit 120, the stabilization time required for a reliable amount of mass flow of the second process fluid 26 flowed by the second process fluid MFC device 174 can be reduced, and the throughput of the semiconductor processing system 100 can also be increased (shown in FIG. 1). It is also conceivable that one or more isolation valves may be fluidly connected to connect the second process fluid source 168 to the supply conduit 112 to facilitate the maintenance of the semiconductor processing system 100 (shown in FIG. 1).

[0044] In a specific example, the first process fluid 10 may be a material layer precursor. In this regard, it is conceivable that the first process fluid 10 may be configured to include one or more silicon-containing material layer precursors. Examples of suitable silicon-containing material layer precursors include non-halogenated silicon-containing material layer precursors such as silane (SiH4) and disilane (Si2H6), and halogenated silicon-containing material layer precursors such as dichlorosilane (H2SiCl2) and trichlorosilane (HCl3Si). According to a specific example, the second process fluid 26 may be configured to include an etching agent such as hydrochloric acid (HCl) or chlorine (Cl2) gas as a non-limiting example.

[0045] The first process fluid 10 may be configured to include alloying components such as a germanium-containing material layer precursor such as germane (GeH4), or a dopant-containing material layer precursor such as arsine (AsH3) or phosphine (PH3). It is also conceivable that either (or both) of the first process fluid 10 and the second process fluid 26 may be configured to include a carrier / diluent fluid. Examples of suitable carrier / diluents include hydrogen (H2) gas as nitrogen (N2) gas, noble gases such as argon (Ar) gas and krypton (Kr) gas, and mixtures containing the aforementioned gases. In the present disclosure, although it is illustrated and described as having two process fluid sources, it should be understood and recognized that the process fluid source 102 may be configured to accommodate a different number of process fluid sources in other examples, and such configurations may also fall within the scope of the present disclosure.

[0046] Referring to FIG. 4, the chamber assembly 104 is shown. In the illustrated example, the chamber assembly 104 includes an injection header 178, a first injection MFC device 180, a second injection MFC device 182, an injection flange 184, a chamber body 186, and a discharge flange 188. The chamber body 186 extends between an injection end 191 and a discharge end 193 opposite the injection end 191 in the longitudinal direction, and may be formed of a ceramic material such as quartz. It is contemplated to support the substrate support 114 within the interior 118 of the chamber assembly 104 for rotation R about the rotation axis 195 during deposition of the material layer 4 onto the substrate 2. Also contemplated is to abut the discharge flange 188 against the discharge end 193 of the chamber body 186 and connect the chamber body 186 to the exhaust conduit 116, to abut the injection flange 184 against the injection end 191 of the chamber body 186 and connect the chamber body 186 to the supply conduit 112, and to configure the chamber body 186 to flow the process fluid 10 in a flow pattern 22 with a lateral flow distribution determined by a lateral spacing and a process fluid mass flow rate measured by the first injection MFC device 180 and the second injection MFC device 182. It is contemplated to configure the chamber assembly 104 as illustrated and described in U.S. Patent No. 7,897,491 to Bauer et al., issued March 1, 2011 (Patent Document 1), the entire contents of which are incorporated herein by reference.

[0047] The first injection MFC device 180 and the second injection MFC device 182 connect the injection header 178 to the injection flange 184 and, through it, connect the injection header 178 to the chamber body 186. On the other hand, the injection header 178 connects the supply conduit 112 to the first injection MFC device 180 and the second injection MFC device 182 and, through it, connects the process fluid source 102 (shown in FIG. 1) to the interior 118 of the chamber body 186. It is conceivable to arrange the second injection MFC device 182 in parallel in communication with the first injection MFC device 180. Also, the first injection MFC device 180 and the second injection MFC device 182 are each configured to flow a predetermined ratio of the process fluid 10 received at the injection header 178 according to the mass flow rate measurement values obtained by the first injection MFC device 180 and the second injection MFC device 182, and the mass flow rate is aggregated outside the first injection MFC device 180 and the second injection MFC device 182, and the aggregated mass flow rate is used to update the mass flow rate set value communicated to the first injection MFC device 180 and the second injection MFC device 182. In this regard, it is conceivable to configure the first injection MFC device 180 and the second injection MFC device 182 to communicate with the system controller 110 via, for example, a wired or wireless link 124. In the illustrated example, the first injection MFC device 180 is one of four (4) first injection MFC devices that cooperate with a single second injection MFC device, for example, the second injection MFC device 182. As will be understood by those skilled in the art from the perspective of the present disclosure, the chamber assembly 104 may be configured with fewer or more first injection MFC devices and second injection MFC devices, and such configurations also remain within the scope of the present disclosure.

[0048] Referring to FIG. 5, a first injection MFC device 180 is shown. In the illustrated example, the first injection MFC device 180 includes a housing 190, an inlet port 192, an outlet port 194, and a signal port 196. Also, as illustrated and described in the present disclosure, the first injection MFC device 180 may also be configured to include a first injection MFC local controller 198, a flow sensor 101, a flow control valve 103, and an actuator 105. Although the present disclosure is illustrated and described as having specific components, the first injection MFC device 180 may, in other examples of the present disclosure, have a configuration that includes other components and / or a configuration that excludes the components illustrated and described in the present disclosure, and it will be understood and recognized that such configurations are also within the scope of the present disclosure. An example of a suitable injection MFC device is the GF125 series MFC device available from Brooks Instrument, LLC. of Hatfield, Pennsylvania.

[0049] The housing 190 supports an inlet port 192, an outlet port 194, and a signal port 196. The inlet port 192 is connected to an injection header 178 (shown in FIG. 4) and fluidly couples the injection header 178 to the outlet port 194 of the first injection MFC device 180 through a flow sensor 101 and a flow control valve 103. The outlet port 194 of the first injection MFC device 180 is connected to an injection flange 184 (shown in FIG. 4) and fluidly couples the injection header 178 to the injection flange 184 through the inlet port 192 and the outlet port 194 of the first injection MFC device 180. The signal port 196 is connected to a wired or wireless link 124 and couples the first injection MFC local controller 198 to the wired or wireless link 124 and, through it, to the system controller 110. The first injection MFC local controller 198 may be similar to the BPC local controller 140 (shown in FIG. 2) and may further be configured to relay the first MFC flow measurement value obtained by the flow sensor 101 to the system controller 110. Also, the first injection MFC local controller 198 may be configured to relay the first MFC device flow setpoint 36 received from the system controller 110 to the actuator 105, and it is also conceivable to configure the actuator 105 to adjust the effective flow region defined by the flow control valve 103 through the first injection MFC device 180 according to the first MFC device flow setpoint 36 thereby.

[0050] The flow sensor 101 and the flow control valve 103 are arranged in series and communicate with each other within the housing 190 along the flow channel 107, connecting the inlet port 192 of the first injection MFC device 180 to the outlet port 194 of the first injection MFC device 180. In this regard, the flow sensor 101 is configured to connect the inlet port 192 to the flow control valve 103, obtain the first injection MFC device flow measurement value 34, and be connected to the first injection MFC local controller 198 by the flow sensor lead 109 to provide the first injection MFC device flow measurement value 34 to the first injection MFC local controller 198. Further, the flow control valve 103 connects the flow sensor 101 to the outlet port 194 and is operably connected to the system controller 110 (shown in FIG. 1) via the actuator 105 and the actuator lead wire 111. In a specific example, the first injection MFC local controller 198 may be configured to adjust the effective flow region defined by the flow control valve 103 according to the first injection MFC device flow measurement value 34. In such an example, such functional units may be bypassed via, for example, the jumper lead 113 and / or the jumper module 115 present on the first injection MFC local controller 198, whereby the effective flow region defined by the flow control valve 103 is remotely controlled in real time by the system controller 110 according to the determined total flow ratio made using the flow measurement values obtained by the first injection MFC device 180 and the second injection MFC device 182 (shown in FIG. 4).

[0051] Referring to FIG. 6, a second injection MFC device 182 is shown. In the illustrated example, the second injection MFC device 182 is similar to the first injection MFC device 180 and includes a housing 117, an inlet port 119, an outlet port 121, and a signal port 123. The second injection MFC device 182 also includes a second injection MFC local controller 125, a flow sensor 127, a flow control valve 129, and an actuator 131. As illustrated and described in the present disclosure, the second injection MFC device 182 further includes a pressure sensor 133 that is local (i.e., provided within the second injection MFC device 182). Advantageously, by including the pressure sensor 133, the semiconductor processing system 100 (shown in FIG. 1) can be simplified, for example, by eliminating the need to include a supply pressure sensor 122 (shown in FIG. 1) along the supply conduit 112. Although the second injection MFC device 182 is illustrated and described in this disclosure as having certain components, in other examples of the present disclosure, the second injection MFC device 182 may have a configuration that includes other components and / or a configuration that excludes the components illustrated and described in this disclosure, and it will be understood and recognized that such configurations are also within the scope of the present disclosure. An example of a suitable MFC device is the GP126 series MFC device available from Brooks Instrument, LLC. of Hatfield, Pennsylvania.

[0052] The housing 117 of the second injection MFC device 182 supports an inlet port 119, an outlet port 121, and a signal port 123. The inlet port 119 is connected to an injection header 178 (shown in FIG. 4) and fluidly couples the injection header 178 to the outlet port 121 of the second injection MFC device 182 through a flow sensor 127 and a flow control valve 129 of the second injection MFC device 182. The outlet port 121 of the second injection MFC device 182 is connected to an injection flange 184 (shown in FIG. 4) of a chamber assembly 104 (shown in FIG. 4) and fluidly couples the injection header 178 to the injection flange 184 through the inlet port 119 and the outlet port 121 of the second injection MFC device 182. The signal port 123 is connected to a wired or wireless link 124 and couples a second injection MFC local controller 125 to the wired or wireless link 124 and, via it, to a system controller 110 (shown in FIG. 1). Also, the second injection MFC local controller 125 may be similar to a BPC local controller 140 (shown in FIG. 2) and, in addition, may be configured to relay an injection pressure measurement value 38 and a second injection MFC flow measurement value 40 respectively obtained by a pressure sensor 133 and a flow sensor 127 to the system controller 110. Also, the second injection MFC local controller 125 is configured to relay a second MFC device flow setpoint 42 received from the system controller 110 to an actuator 131, and the actuator 131 may thereby be configured to adjust an effective flow area through the second injection MFC device 182 according to the second MFC device flow setpoint 42.

[0053] The pressure sensor 133 and the flow sensor 127 are supported within the housing 117 and are fluidly connected in series with each other between the inlet port 119 and the flow control valve 129. In this regard, it is conceivable to arrange the pressure sensor 133 and the flow sensor 127 along the flow channel 135 that fluidly connects the inlet port 119 to the outlet port 121 of the second injection MFC device 182, with the pressure sensor 133 connecting the flow sensor 127 to the inlet port 119, the flow sensor 127 connecting the flow control valve 129 to the pressure sensor 133, and the flow control valve 129 connecting the outlet port 121 to the flow sensor 127. The pressure sensor 133 is configured to obtain the injection pressure measurement value 38 from the fluid passing through the flow channel 135 and provide the injection pressure measurement value 38 to the system controller 110 (shown in FIG. 1) via the signal port 123. The flow sensor 127 is configured to provide the second injection MFC flow measurement value 40 to the system controller 110 via the signal port 123. It is also conceivable to configure the flow control valve 129 to narrow down the effective flow region through the second injection MFC device 182 via the second MFC device flow set value 42 received via the signal port 123. In this regard, the pressure sensor 133 may be connected to the second injection MFC local controller 125 by the pressure sensor lead 137, the flow control valve 129 may be connected to the second injection MFC local controller 125 by the flow control valve lead 139, and the actuator 131 may be connected to the second injection MFC local controller 125 by the actuator lead 141.

[0054] In a specific example, the second injection MFC local controller 125 may be configured to adjust the effective flow region defined by the flow control valve 129 by comparing the second injection MFC flow measurement value 40 with a predetermined mass flow setpoint. In such an example, this function may be bypassed, for example, via a jumper lead 143 and / or a jumper module 145 resident in the memory provided in the second injection MFC local controller 125, and the back pressure in the bypass conduit 120 is controlled in real time according to the second MFC device flow setpoint 42 received from the system controller 110. In this regard, the system controller 110 may also be configured to determine the second MFC device flow setpoint 42 according to the total flow through each of the injection MFC devices, for example, the first injection MFC device 180 (shown in FIG. 4) and the second injection MFC device 182, using the first injection MFC device flow measurement value 34 (shown in FIG. 5) and the second injection MFC flow measurement value 40. As those skilled in the art will appreciate in view of the present disclosure, controlling the mass flow rate of the fluid through the second injection MFC device 182 based on the total flow through the first injection MFC device 180 and the second injection MFC device 182 can improve the accuracy of the fluid distribution to the flow pattern 22 (shown in FIG. 2) defined within the chamber body 186 and improve the control over the properties of the material layer 4 deposited on the substrate 2.

[0055] Referring to FIG. 7, an exhaust source 106 is shown. In the illustrated example, the exhaust source 106 includes a chamber pressure sensor 147, a pressure control valve 149, a junction or connection 151, and a vacuum pump 153. The chamber pressure sensor 147 is disposed along the exhaust conduit 116, connects the pressure control valve 149 to the chamber body 186 (shown in FIG. 4), and is configured to provide a chamber pressure measurement value 44 to the system controller 110 (shown in FIG. 1) via, for example, a wired or wireless link 124. Also, the pressure control valve 149 is disposed along the exhaust conduit 116 and the junction or connection 151 to the chamber pressure sensor 147. On the other hand, the junction or connection 151 connects the bypass conduit 120 to the exhaust conduit 116, connects the vacuum pump 153 to the chamber pressure sensor 147 (and is connected to the first process fluid source 166 and the second process fluid source 168 by the bypass conduit 120), and is configured to control the pressure inside the chamber body 186 (shown in FIG. 4) by adjusting, for example, an effective flow area defined by the pressure control valve 149 and along the exhaust conduit 116. In this regard, the pressure control valve 149 is operably connected to the system controller 110 via, for example, a wired or wireless link 124, and may be configured to control the pressure inside the chamber body 186 according to a chamber pressure value setpoint 46 received from the system controller 110 via the wired or wireless link 124. In a particular example, one or more of the chamber pressure sensor 147, the pressure control valve 149, and the junction or connection 151 may be included in a foreline assembly that connects the exhaust conduit 116 to the chamber body 186. As will be understood by those skilled in the art in view of the present disclosure, by disposing the junction or connection 151 in communication between the vacuum pump 153 and the pressure control valve 149 and / or the chamber pressure sensor 147, the exposure of the pressure control valve 149 and / or the chamber pressure sensor 147 for processing the fluid flowing through the vacuum pump can be limited, increasing the availability of the semiconductor processing system 100.

[0056] The system controller 110 (shown in FIG. 1) may be configured to cooperate with the chamber pressure sensor 147 and the pressure control valve 149 to control the pressure within the interior 118 (shown in FIG. 4) of the chamber body 186 (shown in FIG. 4) during the deposition of the material layer 4 (shown in FIG. 1) onto the substrate 2 (shown in FIG. 1). In this regard, the system controller 110 responds to instructions recorded in a plurality of program modules recorded in a memory, such as, for example, the plurality of program modules 164 (shown in FIG. 2) recorded on the memory 162 (shown in FIG. 2), to (a) receive a chamber pressure value, for example, via a process recipe received at the user interface 158 (illustrated in FIG. 2), (b) receive the chamber pressure measurement value 44, (c) compare the chamber pressure measurement value 44 with the chamber pressure value, and (d) when the chamber pressure measurement value 44 differs from the chamber pressure value by more than a predetermined amount, set the chamber pressure value setpoint 46 and then provide it to the pressure control valve 149. In a particular example, chamber pressure control can be achieved independently of process fluid flow rate adjustment and / or backpressure control within the bypass conduit 120 (illustrated in FIG. 1). As will be understood by those skilled in the art in view of the present disclosure, this enables the feedback loop to be sized and timed to direct, during the deposition of the material layer 4 onto the substrate 2, the stability of the flow pattern 22 (shown in FIG. 4) within the interior 118 of the chamber body 186.

[0057] Referring to FIGS. 8 and 9, BPC 108 is illustrated to control the back pressure by the bypass conduit 120 and control the flow of the process fluid to the chamber assembly 104 when forming the material layer 4 on the substrate 2 using the deposition operation I (shown in FIG. 8) and the etching operation II (shown in FIG. 9). As shown in FIG. 8, the formation of the material layer 4 on the substrate 2 is initiated when the system controller 110 receives values of one or more supply-to-bypass pressure differences, for example, the deposition supply-to-bypass pressure difference value 48 for controlling the back pressure during the deposition operation I and the etching supply-to-bypass pressure difference value 50 for the controller back pressure during the deposition operation II. In a particular example, either (or both) of the deposition supply-to-bypass pressure difference value 48 and the etching supply-to-bypass pressure difference value 50 may be zero. According to a particular example, either (or both) of the deposition supply-to-bypass pressure difference value 48 and the etching supply-to-bypass pressure difference value 50 may be non-zero values such as positive and / or negative values. Also, according to a particular example, the system controller 110 may be configured to receive the first injection MFC device flow rate ratio target 52 of the deposition operation and the second injection MFC device flow rate ratio target 54 of the deposition operation for use during the deposition operation I, and the first injection MFC device flow rate ratio target 56 of the etching operation and the second injection MFC device flow rate ratio target 58 of the etching operation for use during the etching operation II. The aforementioned values may be received as parameters associated with a process recipe, such as a process recipe string received from a factory host computer via the user interface 158 (shown in FIG. 2) of the system controller 110 (shown in FIG. 1).

[0058] The deposition operation I may be configured to include placing a substrate inside the chamber body 186 within 118 and on the substrate support 114. Once placed, the substrate support 114 and the substrate 2 may be configured to rotate about the rotation axis 155 (shown in FIG. 4) at, for example, a predetermined deposition operation rotation speed. Also, while the substrate 2 is placed on the substrate support 114, it may be configured to be heated to a predetermined material layer deposition temperature using one or more external heaters 197 (shown in FIG. 4). The one or more external heaters 197 (shown in FIG. 4) are supported outside the chamber body 186 and are radiation-connected to the substrate 2 by the chamber body 186. Further, the interior 118 of the chamber body 186 may be configured to be evacuated to a predetermined material layer deposition pressure in cooperation with a chamber pressure sensor 147 (shown in FIG. 7) and a pressure control valve 149 (shown in FIG. 7) using, for example, a vacuum pump 153 (shown in FIG. 7). It is conceivable that one or more of the predetermined substrate support rotation speed, the predetermined material layer deposition temperature, and the predetermined material layer deposition pressure may be received as parameters within the aforementioned recipe string received from the factory host computer by the system controller 110.

[0059] The deposition operation I may further include a configuration in which the first process fluid 10 is provided to the first process fluid diverter valve 172 and the second process fluid 26 is provided to the second process fluid diverter valve 176. On the other hand, the first process fluid diverter valve 172 communicates the first process fluid 10 with the chamber structure 104. Meanwhile, the chamber body 186 exposes the substrate 2 to the first process fluid 10 according to the deposition flow pattern 60, whereby the material layer 4 is deposited according to the deposition flow pattern 60, and the residual material layer precursor and / or reaction product 62 may flow through the exhaust conduit 116 to the exhaust source 106 during the deposition operation I. Also, the second process fluid diverter valve 176 may be configured to bypass the second process fluid 26 to the bypass conduit 120 and then bypass it through the BPC 108 to the exhaust source 106 when the first process fluid diverter valve 172 allows the first process fluid 10 to flow into the chamber structure 104. Advantageously, by bypassing the flow of the second process fluid 26 to the exhaust source 106 through the bypass conduit 120, the stabilization of the mass flow rate of the second process fluid 26 potentially required by the flow control device that connects the second process fluid source 168 to the second process fluid diverter valve 176, for example, the second process fluid MFC device 174 (shown in FIG. 3) is enabled, and the need to stabilize the flow of the second process fluid 26 during the etching operation II (shown in FIG. 9) can be avoided.

[0060] In certain examples of the present disclosure, the backpressure within bypass conduit 120 may be configured to be controlled during deposition operation I using the supply pressure measurement obtained using the second injection MFC device 182. In this regard, (a) the second injection MFC device 182 obtains the first process fluid supply pressure measurement 64, (b) the second injection MFC device 182 provides the first process fluid supply pressure measurement 64 to the system controller 110, and (c) the system controller 110 determines the deposition operation backpressure setpoint 66 using the first process fluid supply pressure measurement 64 and the deposition supply-to-bypass pressure difference value 48. In a further aspect, on the one hand, the system controller 110 may (d) provide the deposition operation backpressure setpoint 66 to the BPC 108, and the BPC 108 (e) may reduce the throttle backpressure within the bypass conduit 120 in accordance with the deposition operation backpressure setpoint 66 received from the system controller 110. For example, in a quasi-closed loop control regime, the BPC 108 may also adjust the backpressure in accordance with one or more deposition operation backpressure setpoints sequentially received from the BPC 108 during deposition operation I. Advantageously, by employing a quasi-closed loop control regime, deposition operation I can be performed using the supply-to-bypass pressure difference values of multiple deposition operations, for example, in a deposition operation having two or more steps.

[0061] According to a specific example, the mass flow rate of the first process fluid 10 into the interior 118 of the chamber body 186 may be controlled according to the total mass flow rate of the first process fluid 10 into the injection flange 184. In this regard, (a) the first injection MFC device 180 may obtain the first injection MFC device flow measurement value 68 of the deposition operation, and the second injection MFC device may obtain the second injection MFC device flow measurement value 70 of the deposition operation; (b) the first injection MFC device 180 and the second injection MFC device 182 may provide the first injection MFC device flow measurement value 68 of the deposition operation and the second injection MFC device flow measurement value 70 of the deposition operation to the system controller 110; (c) the system controller 110 may use both the first injection MFC device flow measurement value 68 of the deposition operation and the second injection MFC device flow measurement value 70 of the deposition operation to determine the first injection MFC device flow setpoint 72 of the deposition operation and the second injection MFC device flow setpoint 74 of the deposition operation respectively; (d) it is also conceivable that the system controller 110 provides the deposition operation with the first injection MFC device flow setpoint 72 to the first injection MFC device 180 and provides the deposition operation with the second injection MFC device flow setpoint 74 to the second injection MFC device 182. As those skilled in the art will understand in view of the present disclosure, this enables accurate control of the deposition operation flow pattern 60.

[0062] Configure the system controller 110 to divide the first injection MFC device flow measurement value 68 of the deposition operation by the sum of the first injection MFC device flow measurement value 68 and the second injection MFC device flow measurement value 70 of the deposition operation, compare the quotient of (e) with the first injection MFC device flow ratio target 52 of the deposition operation, and when the quotient of (e) differs from the first injection MFC device flow ratio target 52 of the deposition operation by exceeding a predetermined difference value, determine the first injection MFC device flow set value 72 of the deposition operation by transmitting the first injection MFC device flow set value 72 to the first injection MFC device 180. It is also conceivable to further configure the system controller 110 to divide the second injection MFC device flow measurement value 70 of the deposition operation by the sum of the first injection MFC device flow measurement value 68 and the second injection MFC device flow measurement value 70 of the deposition operation, compare the quotient of (h) with the second injection MFC device flow ratio target 54 of the deposition operation, and when the quotient of (g) differs from the second injection MFC device flow ratio target 54 of the deposition operation by exceeding a predetermined difference value, determine the second injection MFC device flow set value 74 of the deposition operation by transmitting the second injection MFC device flow set value 74 to the second injection MFC device 182. As will be understood by those skilled in the art in view of the present disclosure, the foregoing operations may be repeated during the deposition operation I. As will be understood by those skilled in the art in view of the present disclosure, the foregoing operations may be performed to update the deposition MFC flow set value for each injection MFC device that communicates the first process fluid to the chamber body 186 of the chamber configuration including, for example, four (4) first injection MFC devices 180 and a single (e.g., sole or unique) second injection MFC device 182.

[0063] The deposition operation I may further include providing the first process fluid 10 to the first process fluid diverter valve 172 and the second process fluid 26 to the second process fluid diverter valve 176. On the other hand, the first process fluid diverter valve 172 communicates the first process fluid 10 with the chamber assembly 104, while the chamber body 186 exposes the substrate 2 to the first process fluid 10 according to the deposition flow pattern 60, and the material layer 4 is thereby deposited according to the deposition flow pattern 60. The residual material layer precursor and / or reaction product 62 during the deposition operation I may flow through the exhaust conduit 116 to the exhaust source 106. Also, the second process fluid diverter valve 176 may be configured to divert the second process fluid 26 to the bypass conduit 120 and through it to the exhaust source 106 via the BPC 108 when the first process fluid diverter valve 172 communicates the first process fluid 10 with the chamber assembly 104. Advantageously, by diverting the flow of the second process fluid 26 to the exhaust source 106 via the bypass conduit 120, it enables the stabilization of the mass flow rate of the second process fluid 26 potentially required by the flow control device that connects the second process fluid source 168 to the second process fluid diverter valve 176, for example, the second process fluid MFC device 174 (shown in FIG. 3), and avoids the need to stabilize the flow of the second process fluid 26 during the etching operation II.

[0064] As shown in FIG. 9, the etching operation II may be configured to be achieved by switching the flow of the second process fluid 26 from the bypass conduit 120 to the chamber assembly 104. In this regard, the flow of the first process fluid 10 may be stopped, and the first process fluid diverter valve 172 may be operated such that the first process fluid diverter valve 172 communicates and separates the first process fluid source 166 from the supply conduit 112. The second process fluid diverter valve 176 may be further operated such that the second process fluid diverter valve 176 fluidly connects the second process fluid source 168 to the supply conduit 112 and through it to the chamber assembly 104 via the first injection MFC device 180 and the second injection MFC device 182. Thereafter, the first injection MFC device 180 and the second injection MFC device 182 may cooperate to introduce the second process fluid 26 into the interior 118 of the chamber body 186, and the chamber body 186 may expose the substrate 2 and the material layer 4 deposited thereon according to the etching flow pattern 76, and the residual second process fluid and / or etching product 78 generated by the chamber body 186 may be configured to flow to the exhaust source 106 by the exhaust conduit 116.

[0065] Also, the back pressure in the bypass conduit 120 may be controlled during the etching operation II using the supply pressure measurement value obtained using the second injection MFC device 182. In this regard, (a) the second injection MFC device 182 obtains a second process fluid supply pressure measurement value 80 when the second process fluid 26 flows into the chamber body 186, (b) the second injection MFC device 182 provides the second process fluid supply pressure measurement value 80 to the system controller 110, and (c) the system controller 110 determines an etching operation back pressure set value 82 using the second process fluid supply pressure measurement value 80 and the etching supply-to-bypass pressure difference value 50 (shown in FIG. 1). Further, it is conceivable that the system controller 110 (d) provides the etching operation back pressure set value 82 to the BPC 108, and the BPC 108 (e) controls the back pressure in the bypass conduit 120 according to the etching operation back pressure set value 82 received from the system controller 110. In a specific example, the back pressure may be controlled in a quasi-closed loop control regime during the etching operation II. In this regard, the BPC 108 may narrow down the back pressure in the bypass conduit 120 in response to a change in the pressure in the supply conduit 112 during the etching operation II, according to two or the etching operation back pressure set values 82 sequentially received from the BPC 108.

[0066] According to a specific example, the mass flow rate of the second process fluid 26 into the interior 118 of the chamber body 186 may be controlled according to the total mass flow rate of the second process fluid 26 into the injection flange 184 from each of a plurality of injection MFC devices that fluidly connect the injection header 178 to the injection flange 184. In this regard, (a) the first injection MFC device 180 obtains the first injection MFC device flow measurement value 84 of the etching operation, and the second injection MFC device obtains the second injection MFC device flow measurement value 86 of the etching operation; (b) the first injection MFC device 180 and the second injection MFC device 182 provide the first injection MFC device flow measurement value 84 of the etching operation and the second injection MFC device flow measurement value 86 of the etching operation to the system controller 110; (c) the system controller 110 uses both the first injection MFC device flow measurement value 84 of the etching operation and the second injection MFC device flow measurement value 86 of the etching operation to determine the first injection MFC device flow setpoint 88 of the etching operation and the second injection MFC device flow setpoint 90 of the etching operation, respectively; (d) it is conceivable that the system controller 110 provides the first injection MFC device flow setpoint 88 of the etching operation to the first injection MFC device 180 and provides the second injection MFC device flow setpoint 90 of the etching operation to the second injection MFC device 182.

[0067] In a specific example of the present disclosure, the system controller 110 divides (e) the first injection MFC device flow measurement value 84 of the etching operation by the sum of the first injection MFC device flow measurement value 84 and the second injection MFC device flow measurement value 86 of the etching operation, and (f) compares the quotient of (e) with the first injection MFC device flow ratio target 56 (shown in FIG. 8) of the etching operation. When (g) the quotient of (e) differs from the first injection MFC device flow ratio target 56 of the etching operation by more than a predetermined difference value, the system controller 110 provides the updated first injection MFC device flow setting value 72 of the etching operation to the first injection MFC device 180, thereby determining the first injection MFC device flow setting value 88 of the etching operation. Also, the system controller 110 divides (h) the second injection MFC device flow measurement value 86 of the etching operation by the sum of the first injection MFC device flow measurement value 84 and the second injection MFC device flow measurement value 86 of the etching operation, and (i) compares the quotient of (h) with the second injection MFC device flow ratio target 58 (shown in FIG. 8) of the etching operation. When (g) the quotient of (h) differs from the second injection MFC device flow ratio target 58 of the etching operation by more than a predetermined difference value, the system controller 110 transmits the updated second injection MFC device flow setting value 90 of the etching operation to the second injection MFC device 182, thereby further configuring to determine the first injection MFC device flow setting value 88 of the etching operation. As those skilled in the art will understand in view of the present disclosure, the foregoing operations may be repeatedly performed during the etching operation II. As those skilled in the art will understand in view of the present disclosure, this enables accurate control of the etching operation flow pattern 76.

[0068] In the illustrated example, the first process fluid 10 and the second process fluid 26 are introduced into the chamber body 186 via a common (e.g., single) MFC assembly 157. The chamber assembly 104 may be configured to have multiple MFC assemblies in certain examples of the present disclosure, such as a deposition MFC assembly and an etching MFC assembly. In such examples, the first process fluid source 166 may be configured to be connected to the chamber body 186 by a first process fluid diverter valve 172, and the deposition injection MFC assembly and the second process fluid source 168 may be configured to be connected to the chamber body 186 by a second process fluid diverter valve 176 and an etching MFC assembly. The deposition injection MFC assembly includes a first injection MFC device 180 and a second injection MFC device 182, and flows the first process fluid 10 into the chamber body 186. The etching MFC assembly may also be configured to further include similarly arranged MFC devices. As would be understood by those skilled in the art in view of the present disclosure, the foregoing operations may be performed, for example, in a chamber assembly having four (4) first injection MFC devices 180 that fluidly connect an injection header 178 to an injection flange 184 and a single (e.g., sole or only) second injection MFC device 182, to update the etching MFC flow rate setpoints of each injection MFC device that flows the first process fluid into the chamber body 186.

[0069] Referring to FIGS. 10 to 13, a method 200 for forming a semiconductor structure, for example, the semiconductor structure 92 (shown in FIG. 9) is shown. Referring to FIG. 10, in forming 200, the semiconductor structure may be configured to support a substrate within the chamber body, for example, the substrate 2 (shown in FIG. 1) within the chamber body 186 (shown in FIG. 4), as indicated by box 202. Further, the formation 200 of the semiconductor structure may be further configured to deposit a material layer on the substrate, for example, deposit the material layer 4 (shown in FIG. 8) on the substrate, as indicated by box 204. The formation 200 of the semiconductor structure may further include, as indicated by box 206 and arrow 208, removing the substrate from the chamber body for further processing, if appropriate for the intended use of the semiconductor structure, and then placing another substrate within the chamber body for forming further semiconductor thereon. In a particular example of the present disclosure, the semiconductor device may be manufactured using a semiconductor structure formed on a substrate. In this regard, it is contemplated that the semiconductor device may be manufactured using a semiconductor structure such as a logic device having a gate all around or finned architecture, as indicated by boxes 212 and 214. Further, in a further aspect, it is also contemplated that a memory type semiconductor device may be formed using a semiconductor structure such as a dynamic random access memory device having a three-dimensional architecture, as indicated by box 216.

[0070] In a specific example, the deposition 204 of the material layer may be configured to include adjusting the back pressure in a bypass conduit connected in parallel and communicating with the chamber body, as indicated by box 218, for example, the back pressure in bypass conduit 120 (shown in FIG. 1). Further, the deposition 204 of the material layer may be, for example, as indicated by box 220, during the deposition operation I, through both the first injection MFC device 180 (shown in FIG. 4) and the second injection MFC device 182 (shown in FIG. 4) of the MFC assembly 157 (shown in FIG. 4), such as the first process fluid 10 introduced into the chamber body 186, adjusting the individual flow rates of the first process fluid introduced into the chamber body through a plurality of injection MFC devices of the MFC assembly connected to the chamber body. In this regard, as also shown by box 220, the flow rate of the first process fluid 10 may be adjusted through a plurality of MFC devices of the MFC assembly 157 according to the total flow rate of the first process fluid 10 passing through the plurality of MFC devices of the MFC assembly 157.

[0071] According to a specific example, the formation 200 of the semiconductor structure may include removing material from the substrate and / or material layer using a second process fluid, as shown by box 222, for example, removing material 94 (shown in FIG. 9) using the second process fluid 26 (shown in FIG. 9). The deposition and subsequent removal of material from the substrate and / or material layer may be one of a plurality of deposition and removal cycles, as shown by arrow 224. In such an example, the removal 206 of material from the substrate and / or material layer may include adjusting the back pressure within a bypass conduit fluidly connected in parallel with the chamber body, as shown by box 226, for example, within bypass conduit 120 (shown in FIG. 1). Also, in such an example, the removal 206 of material from the substrate and / or material layer may include adjusting the individual flow rates of the second process fluid introduced into the chamber body through a plurality of injection MFC devices of an MFC configuration connected to the chamber body, such as the second process fluid introduced through the first injection MFC device 180 (shown in FIG. 4) and the second injection MFC device 182 (shown in FIG. 4) of the MFC configuration 157 (shown in FIG. 4) during the etching operation II (shown in FIG. 9), according to the total flow rate of the second process fluid through the MFC configuration, as shown by box 228. In this regard, as also shown by box 228, it is conceivable that the flow rate of the second process fluid may be adjusted through a plurality of MFC devices according to the total flow rate of the second process fluid through the plurality of MFC devices.

[0072] Referring to FIG. 11, as shown by box 230, the support 202 of the substrate within the chamber body may be configured to include placing the substrate on a substrate support such as, for example, the substrate support 114 (shown in FIG. 1). The support 202 of the substrate within the chamber body may be configured to include rotating the substrate support and the substrate about a rotation axis, for example, the rotation axis 195 (shown in FIG. 4), as shown by box 232. The support 202 of the substrate within the chamber body may be configured to include heating the substrate using a heater element disposed outside the chamber body, for example, one or more heater elements 197 (shown in FIG. 4), as shown by box 234. The support 202 of the substrate within the chamber body may be further configured to include evacuating the interior of the chamber body to a predetermined pressure using an evacuation source, for example, the evacuation source 106 (shown in FIG. 1), as shown by box 236.

[0073] The exhaust 236 of the chamber body may be configured to obtain a chamber pressure measurement value using a chamber pressure sensor, for example, the chamber pressure measurement value 44 (shown in the figure) using the chamber pressure sensor 147 (shown in FIG. 7), as shown in box 238. The exhaust 236 of the chamber body may further be configured to compare the chamber pressure measurement value with a predetermined chamber pressure value, as shown in box 240. The pressure inside the chamber body may be adjusted when the chamber pressure measurement value exceeds a predetermined chamber pressure difference and is different from the predetermined chamber pressure value, as shown in boxes 242 and 244, and then the aforementioned operation may be repeated as shown by arrow 246. Also, it is conceivable that the configuration may be such that no pressure adjustment is performed when the difference between the chamber pressure measurement value and the predetermined chamber pressure value is smaller than the value of the predetermined chamber pressure difference, as shown by arrow 248. In a specific example, the chamber pressure measurement value and the predetermined chamber pressure value may be the deposition operation chamber pressure measurement value and the predetermined deposition operation chamber pressure value, respectively, as shown in box 250. According to a specific example, the chamber pressure measurement value and the predetermined chamber value may be the etching operation chamber pressure measurement value and the predetermined etching operation chamber pressure value, as shown in box 252. The chamber pressure adjustment may be achieved using a pressure control valve, for example, the pressure control valve 149 (shown in FIG. 7), as also shown in box 244.

[0074] Referring to FIG. 12, during the deposition of the material layer onto the substrate and / or during the removal of material from the substrate and / or the material layer, the regulated pressure 218 in the bypass conduit may be configured to obtain a supply pressure measurement value from an MFC assembly connected to the chamber body, such as from the second injection MFC device 182 as shown in box 254. The deposition backpressure setpoint may be determined, as shown in box 256, by using the supply pressure measurement value and the deposition operation supply-to-bypass difference value, for example, by adding the deposition supply-to-bypass difference value to the supply pressure measurement value. The backpressure in the bypass conduit may be controlled using the deposition operation backpressure setpoint, for example, as shown in box 258, by communicating the backpressure setpoint to a BPC disposed along the bypass conduit, such as BPC 108 (shown in FIG. 1). In this regard, as shown in boxes 260 and 262, it is conceivable that a configuration may be adopted in which a backpressure measurement value is obtained from within the bypass conduit using, for example, a BPC, and this backpressure measurement value is compared with the deposition backpressure setpoint. As shown in boxes 264 and 266, if the backpressure differs from the deposition backpressure setpoint by more than a predetermined deposition backpressure differential backpressure in the bypass conduit, the above-described comparison may be repeated within the BPC to make adjustments, as shown by arrow 268. If the backpressure measurement value differs from the deposition backpressure setpoint by less than the predetermined deposition backpressure differential, no adjustment is made, and as shown by arrow 270, further backpressure measurement values are obtained and the above-described comparison is repeated. In particular, as shown by arrow 272, a further backpressure setpoint may be determined and provided to the BPC during processing, such that the difference between the backpressure in the bypass conduit and the pressure in the supply conduit is maintained regardless of changes in the pressure in the supply conduit.

[0075] In a specific example, the supply pressure measurement value may be obtained when a first process fluid, such as a silicon-containing material layer precursor, passes through the MFC assembly during deposition operation I (shown in FIG. 8), as shown in box 274. According to a specific example, the back pressure measurement value may be obtained when a second process fluid, such as an etchant, passes through the bypass conduit, as also shown in box 274. Also, it is conceivable that the supply pressure measurement value may be obtained when the second process fluid passes through the MFC assembly during etching operation II (shown in FIG. 9), for example, when the etchant passes through the MFC assembly, as shown in box 276. According to a specific example, the back pressure measurement value may be obtained when the first process fluid passes through the bypass conduit, for example, when the material layer precursor passes through the bypass conduit, as also shown in box 276. As shown in box 278 and box 280, it is conceivable that the supply-to-bypass pressure difference value may be zero or a non-zero value in any (or both) of the deposition operation and the etching operation.

[0076] Referring to FIG. 13, the adjustment of the flow rate of the first process fluid 220 and / or the adjustment of the flow rate of the second process fluid 228 into the chamber body through the plurality of injection MFC devices by the total flow rate may include receiving a predetermined first injection MFC flow rate ratio and a predetermined second MFC flow rate ratio in, for example, the system controller 110 (shown in FIG. 1), as shown in box 282. Also, as shown in box 284, the first injection MFC flow rate measurement value and the second injection MFC flow rate measurement value may be received from the injection MFC devices of the MFC assembly. For example, the first injection MFC device flow rate measurement value 68 (shown in FIG. 8) of the deposition operation may be received from the first injection MFC device 180 (shown in FIG. 4), and the second injection MFC device flow rate measurement value 70 (shown in FIG. 8) of the deposition operation may be received from the second injection MFC device 182 (shown in FIG. 4).

[0077] The total injection flow rate of the MFC assembly may be calculated using a plurality of injection MFC flow rate measurement values, for example, by adding the second injection MFC flow rate measurement value to the first injection MFC flow rate measurement value, as shown in boxes 286 and 288. As shown by bracket 290, it may be configured to determine the injection MFC device flow rate ratio adjusted for the total injection flow rate using the total injection flow rates of the first injection MFC device and the second injection MFC device. In this regard, the first injection MFC flow rate ratio adjusted for the total injection flow rate with respect to the first injection MFC device is determined by dividing the first injection MFC device flow rate measurement value by the total flow rate, as shown in box 292, and the second injection MFC device flow rate ratio adjusted for the total injection flow rate with respect to the second injection MFC device is determined by dividing the second injection MFC device flow rate measurement value by the total flow rate, as shown in box 294. As shown in boxes 296 and 298, the measurement 282 of the total injection flow rate, the measurement 292 of the first injection MFC device flow rate measurement value adjusted for the total injection flow rate, and the measurement 294 of the second MFC device flow rate measurement value adjusted for the total injection flow rate may be configured to perform the measurement in a quasi-closed loop manner outside the MFC assembly, for example, outside the first injection MFC device and the second injection MFC device.

[0078] Referring to FIG. 14, as shown in box 201, it is conceivable to configure to compare the measured value of the first injection MFC device flow rate with the total injection flow rate adjusted with a predetermined first injection MFC flow rate ratio. When the measured value of the first injection MFC device flow rate with the total injection flow rate adjusted differs from the predetermined first injection MFC flow rate ratio by exceeding a predetermined flow rate ratio difference, as shown in boxes 203 and 205, determine the first injection MFC flow rate set value, and as shown in boxes 207 and 209, communicate the first injection MFC flow rate setting to the first injection MFC device for the flow rate passing through the first injection MFC device, and relay the first injection MFC flow rate set value among them to the flow control valve disposed therein, so that it may be configured to adjust according to the first injection MFC flow rate set value. When the measured value of the first injection MFC device flow rate with the total injection flow rate adjusted differs from the predetermined first injection MFC flow rate ratio, the predetermined flow rate difference may be configured to continue monitoring based on the total injection flow rate adjustment standard without determining the first injection MFC flow rate set value, as shown by arrow 211. In any case, as shown in boxes 213 and 215, it is conceivable to configure the first injection MFC device to acquire one or more additional measured values of the first injection MFC device flow rate and communicate the one or more additional measured values of the first injection MFC device flow rate to the system controller.

[0079] The comparison 201 may be configured to be performed outside (e.g., remotely) the first injection MFC device, such as on a system controller. It is conceivable to configure the system controller to communicate the first injection MFC flow measurement value and the determined first injection MFC device flow set value to the first injection MFC device. In this regard, the first injection MFC device flow set value may be configured to be relayed therein to a flow control valve disposed within the first injection MFC device, as shown at line 217, such as in a distributed computing regime. As those skilled in the art will appreciate in view of the present disclosure, the comparison 201 may alternatively be performed within the first injection MFC device (e.g., locally), and the system controller may be configured to communicate the total injection flow rate to the first injection MFC device such that a first injection MFC device controller disposed within the first injection MFC device may perform the comparison 201 in a more limited distributed computing regime.

[0080] Referring to FIG. 15, as shown by box 219, it is conceivable to configure to compare the measured value of the flow rate of the second injection MFC device with the total injection flow rate adjusted with a predetermined second injection MFC flow rate ratio. When the measured value of the flow rate of the second injection MFC device with the total injection flow rate adjusted differs from the predetermined second injection MFC flow rate ratio by exceeding a predetermined flow rate ratio difference, as shown by box 221 and box 223, a second injection MFC flow rate set value is determined, and the flow rate passing through the second injection MFC device is, as shown by box 225 and box 227, the second injection MFC flow rate set is communicated to the second injection MFC device, and the second injection MFC flow rate set value therein is relayed to a flow control valve arranged in the second injection MFC device, and it may be configured to adjust according to the second injection MFC flow rate set value. When the measured value of the flow rate of the second injection MFC device with the total injection flow rate adjusted differs from the predetermined second injection MFC flow rate ratio by less than a predetermined flow rate difference, without determining the second injection MFC flow rate set value, as shown by arrow 229, it may be configured to continue monitoring the flow rate passing through the second injection MFC device based on the total injection flow rate adjustment criterion. Also, in any case, the second injection MFC device, as shown by box 231 and box 233, may be configured to acquire one or more additional measured values of the flow rate of the second injection MFC device and communicate the one or more additional measured values of the flow rate of the second injection MFC device to the system controller.

[0081] Similar to the first injection MFC device, it is also conceivable to configure the comparison 219 to be executed outside (e.g., remotely) the second injection MFC device, such as on a system controller. In this regard, the second injection MFC flow measurement value and the determined second injection MFC device flow set value can be communicated by the system controller to the second injection MFC device, and the second injection MFC device flow set value therein can be relayed to a flow control valve arranged in the second injection MFC device in a distributed computing regime as shown by line 235. As those skilled in the art will understand in view of the present disclosure, the comparison 219 may, as an alternative configuration, be executed within the second injection MFC device (e.g., locally), and the system controller may be configured to communicate the total injection flow rate to the second injection MFC device such that the second injection MFC device controller arranged within the second injection MFC device can perform the comparison 219 in a relatively limited distributed computing regime.

[0082] As will be understood by those skilled in the art in view of the present disclosure, the above operations may be carried out to control the flow rate according to the total injection flow rate adjustment criterion, for example, for each injection MFC device of the MFC assembly 157 (shown in FIG. 4), for each of the MFC devices of the MFC assembly. As those skilled in the art will understand in view of the present disclosure, the aforementioned operations may also be carried out during either (or both) of the deposition and material removal operations, for example, during deposition operation I (shown in FIG. 8) and etching operation II (shown in FIG. 9), and may be carried out using either a common MFC assembly or dedicated deposition and etching MC arrangements.

[0083] The present disclosure has been provided in the context of certain embodiments and examples, but the present disclosure extends beyond the specifically described embodiments to other alternative embodiments and / or uses of those embodiments, and their obvious variations and equivalents, which will be understood by those skilled in the art. In addition, although some variations of the embodiments of the present disclosure are illustrated and described in detail, other variations within the scope of the present disclosure will be readily apparent to those skilled in the art based on the present disclosure. Also, the specific configurations and aspects of the embodiments may be variously combined or partially combined, and such combinations and partial combinations are also intended to be within the scope of the present disclosure. It will be understood that the various configurations and aspects of the disclosed embodiments can be combined with each other or replaced to form various modes of the embodiments of the present disclosure. Therefore, it is intended that the scope of the present disclosure should not be limited by the specific embodiments described above.

[0084] The headings (if any) provided herein are for convenience only and do not necessarily affect the scope or meaning of the apparatus and methods disclosed in the present disclosure.

Claims

1. A chamber body, a mass flow controller (MFC) structure connected to the chamber body, a first injection MFC device connected to the chamber body, a second injection MFC device connected to the chamber body and arranged in parallel and communicating with the first injection MFC device, and an MFC structure comprising the second injection MFC device, a bypass conduit having a backflow controller (BPC) arranged in parallel and communicating with the chamber body and the MFC structure, wherein one of the first injection MFC device and the second injection MFC device is connected to the BPC, and a chamber structure comprising the bypass conduit.

2. The chamber structure according to claim 1, wherein only one of the first injection MFC device and the second injection MFC device is provided with a pressure sensor.

3. An exhaust conduit connected to the chamber body, a supply conduit connected to the MFC structure, further comprising, The chamber structure according to claim 1, wherein the MFC structure and the chamber body fluidly connect the supply conduit in series with the exhaust conduit.

4. A process fluid diverter valve arranged along the supply conduit, a joint or connection portion arranged along the exhaust conduit, further comprising, The chamber structure according to claim 3, wherein the bypass conduit connects the joint or the connection portion to the process fluid diverter valve.

5. The process fluid diverter valve is a first process fluid diverter valve, The chamber structure is, a second process fluid diverter valve connected to the supply conduit and connected to the MFC structure through the supply conduit, a first process fluid source including a silicon-containing material layer precursor source connected to the first process fluid diverter valve, a second process fluid source including an etchant connected to the second process fluid diverter valve, and the chamber structure according to claim 4.

6. A chamber pressure sensor arranged along the exhaust conduit, a pressure control valve arranged along the exhaust conduit and connected to the chamber body by the chamber pressure sensor, further comprising, and the chamber structure according to claim 3.

7. The first injection MFC device is, a housing supporting an inlet port, an outlet port, and a signal port, a flow sensor arranged in the housing and connected to the inlet port, A flow control valve disposed within the housing and connecting the flow sensor to the outlet port; A first injection MFC local controller disposed within the housing and connected to the signal port, configured to communicate the first injection MFC flow measurement value to the system controller through the signal port and receive a first injection MFC flow set value through the signal port. The chamber structure according to claim 1, further comprising the first injection MFC local controller.

8. In order to relay the first injection MFC flow measurement value to the system controller through the signal port and receive the first injection MFC flow set value from the system controller through the signal port, at least one of a jumper lead connecting the flow sensor to the signal port and a jumper module recorded in the memory included in the first injection MFC local controller. The chamber structure according to claim 7, further comprising.

9. The second injection MFC device, A housing supporting an inlet port, an outlet port, and a signal port; A pressure sensor disposed within the housing and connected to the inlet port; A flow sensor disposed within the housing and connected to the pressure sensor; A flow control valve disposed within the housing and connecting the flow sensor to the outlet port; A second injection MFC local controller disposed within the housing and connected to the signal port, configured to communicate a supply pressure measurement value and a first injection MFC flow measurement value to the system controller through the signal port and receive a second injection MFC flow set value through the signal port. The chamber structure according to claim 1, further comprising the second injection MFC local controller.

10. In order to relay the supply pressure measurement value and the second injection MFC device flow measurement value to the system controller and receive the second injection MFC flow set value from the system controller through it, at least one of a jumper lead connecting the flow sensor to the signal port and a jumper module recorded in the memory included in the second injection MFC local controller. The chamber structure according to claim 9, further comprising.

11. The BPC is, A housing that supports an inlet port, an outlet port, and a signal port, A capacitive manometer disposed within the housing and connected to the inlet port, A flow control valve disposed within the housing and connecting the capacitive manometer to the outlet port, A BPC local controller disposed within the housing and connected to the signal port, comprising: The BPC local controller responds to instructions recorded in the memory, Receiving a backpressure setpoint from the system controller through the signal port, Receiving a backpressure measurement value from the capacitive manometer, Comparing the backpressure measurement value with the backpressure setpoint, When the backpressure measurement value is greater than the backpressure setpoint by a predetermined backpressure difference value, adjusting the backpressure within the bypass conduit. The chamber structure according to claim 1.

12. A semiconductor processing system comprising the chamber structure according to claim 1, The MFC structure of the chamber structure fluidly connects the supply conduit to the exhaust conduit, A process fluid diverter valve disposed along the supply conduit, A joint or connection disposed along the exhaust conduit, wherein the bypass conduit connects the process fluid diverter valve to the joint or connection, the joint or connection, A system controller connecting the MFC structure to the BPC, further comprising: The system controller responds to instructions recorded in the memory, Receiving a supply pressure measurement value from the MFC structure obtained by one of the first injection MFC device and the second injection MFC device, Receiving a supply-to-bypass difference value, Using the supply pressure measurement value and the supply-to-bypass difference value to determine a backpressure setpoint, Using the supply pressure measurement value to communicate the backpressure setpoint to the BPC so as to narrow down the backpressure within the bypass conduit. A semiconductor processing system configured to perform.

13. Determining the backpressure setpoint includes adding the supply-to-bypass difference value to the supply pressure measurement value. The semiconductor processing system according to claim 12.

14. The semiconductor processing system according to claim 13, wherein the supply-to-bypass difference value is zero.

15. The semiconductor processing system according to claim 13, wherein the supply-to-bypass difference value is a non-zero value.

16. The instructions recorded in the memory cause the system controller to acquire a first injection MFC device flow rate measurement value of the first process fluid when the first process fluid passes through the first injection MFC device; acquire a second injection MFC device flow rate measurement value of the first process fluid when the first process fluid passes through the second injection MFC device; determine a first injection MFC device set value using the first injection MFC device flow rate measurement value and the second injection MFC device flow rate measurement value; determine a second injection MFC device set value using the first injection MFC device flow rate measurement value and the second injection MFC device flow rate measurement value; communicate the first injection MFC device set value to the first injection MFC device and the second injection MFC device set value to the second injection MFC device. The semiconductor processing system according to claim 12, further performing the above.

17. A method of forming a semiconductor structure, comprising: a chamber body, a mass flow controller (MFC) structure connected to the chamber body, the MFC structure including a first injection MFC device connected to the chamber body and a second injection MFC device connected to the chamber body and arranged in parallel in communication with the first injection MFC device, and a bypass conduit having a backflow controller (BPC) arranged in parallel in communication with the chamber body and the MFC structure, the bypass conduit being connected to one of the first injection MFC device and the second injection MFC device, in a chamber structure; placing a substrate in the chamber body; flowing a first process fluid into the chamber body using the first injection MFC device and the second injection MFC device; forming a semiconductor structure on the substrate using the first process fluid; adjusting the back pressure in the bypass conduit arranged in parallel in communication with the chamber structure using the MFC structure and the BPC using a supply pressure measurement value obtained by one of the first injection MFC device and the second injection MFC device.

18. The first process fluid includes a silicon-containing material layer precursor, and the second process fluid includes an etchant. stopping the flow of the first process fluid to the chamber configuration; switching the flow of the second process fluid from the bypass conduit to the chamber configuration; further comprising removing, using the second process fluid, a portion of the silicon-containing material layer deposited on the substrate using the first process fluid, the method of claim 17. **Claim 19** the first injection MFC device not comprising a pressure sensor; adjusting the pressure in the bypass conduit; obtaining the supply pressure measurement value using the second injection MFC device; determining a backpressure setpoint using the supply pressure measurement value and the supply pressure difference value; receiving, by the BPC, the backpressure setpoint during deposition of the material layer on the substrate and adjusting the backpressure in the bypass conduit according to the backpressure setpoint, the method of claim 17. **Claim 20** flowing the first process fluid into the chamber configuration; obtaining a first injection MFC device flow measurement value of the first process fluid when the first process fluid passes through the first injection MFC device; obtaining a second injection MFC device flow measurement value of the first process fluid when the first process fluid passes through the second injection MFC device; determining a first injection MFC device setpoint using the first injection MFC device flow measurement value and the second injection MFC device flow measurement value; determining a second injection MFC device setpoint using the first injection MFC device flow measurement value and the second injection MFC device flow measurement value; communicating the first injection MFC device setpoint to the first injection MFC device and the second injection MFC device setpoint to the second injection MFC device, the method of claim 17.

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