Plasma processing apparatus and plasma processing method

Abstract

To provide a technique for suppressing the wear of edge rings.SOLUTION: A plasma processing apparatus disclosed herein includes a chamber, a substrate support within the chamber, a plasma generation section, a bias power supply, an edge ring, a lifting mechanism, a switch, and a controller. The bias power supply and / or the high-frequency power supply for the plasma generation section are electrically coupled to the base of the substrate support. The lift mechanism includes a conductive ring, a rod, an actuator, and a connecting member, and is configured to move the edge ring up and down, which is supported by the conductive ring. The connecting member electrically connects between the conductive ring and the base. The switch is configured to switch between a first state in which the edge ring and the base are electrically connected each other, and a second state in which the edge ring and the base are electrically isolated from each other. The controller is configured to control the switch.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] Exemplary embodiments of the present disclosure relate to a plasma processing apparatus and a substrate processing system.

Background Art

[0002] A plasma processing apparatus is used for plasma processing of a substrate. The plasma processing apparatus includes a chamber and a substrate support unit. The substrate support unit is disposed inside the chamber. The substrate support unit includes a base and an electrostatic chuck. A bias power source for generating an electrical bias for drawing ions from the plasma to the substrate is connected to the base. The electrostatic chuck is configured to support the substrate and an edge ring surrounding the substrate. Patent Document 1 below discloses a plasma processing apparatus configured to move the edge ring up and down.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique for suppressing the consumption of the edge ring.

Means for Solving the Problems

[0005] In one exemplary embodiment, a plasma processing apparatus is disclosed. The plasma processing apparatus includes a chamber, a substrate support, a plasma generation unit, a bias power supply, an edge ring, a lift mechanism, a switch, and a control unit. The substrate support is disposed within the chamber. The substrate support includes a base and an electrostatic chuck on the base. The plasma generation unit includes a high-frequency power supply and is configured to generate plasma within the chamber. The bias power supply is configured to generate an electrical bias to draw ions from the plasma to a substrate on the substrate support. The bias power supply and / or the high-frequency power supply are electrically coupled to the base. The edge ring has conductivity and is disposed to surround the substrate on the substrate support. The lift mechanism is configured to move the edge ring up and down. The lift mechanism includes a conductive ring, a rod, an actuator, and a connecting member. The conductive ring is electrically coupled to the edge ring while supporting the edge ring thereon. The rod extends vertically below the conductive ring. The actuator is configured to move the edge ring up and down via the rod and the conductive ring. The connecting member provides an electrical connection between the conductive ring and the base. The switch is configured to be switchable between a first state in which the edge ring and the base are electrically coupled to each other and a second state in which the edge ring and the base are electrically separated from each other. The control unit is configured to control the switching between the first state and the second state by the switch.

Advantages of the Invention

[0006] According to one exemplary embodiment, it is possible to suppress the consumption of the edge ring.

Brief Description of the Drawings

[0007]

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Best Mode for Carrying Out the Invention

[0008] Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In each drawing, the same or corresponding parts will be denoted by the same reference numerals.

[0009] FIG. 1 is a diagram for explaining a configuration example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support portion 11, and a plasma generation portion 12. The plasma processing chamber 10 has a plasma processing space. Further, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas discharge port for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 described later, and the gas discharge port is connected to an exhaust system 40 described later. The substrate support portion 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generation unit 12 is configured to generate plasma from at least one process gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), surface wave plasma (SWP), or the like. Also, various types of plasma generation units including an AC (alternating current) plasma generation unit and a DC (direct current) plasma generation unit may be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Accordingly, the AC signal includes an RF (radio frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to execute various processes described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 so as to execute the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is realized by, for example, a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 and executed. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0012] Hereinafter, a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1 will be described. FIG. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power source 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support unit 11 includes a main body part 111 and a ring assembly 112. The main body part 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body part 111 surrounds the central region 111a of the main body part 111 in a plan view. The substrate W is disposed on the central region 111a of the main body part 111, and the ring assembly 112 is disposed on the annular region 111b of the main body part 111 so as to surround the substrate W on the central region 111a of the main body part 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Also, at least one RF / DC electrode coupled to the RF power supply 31 and / or the DC power supply 32 described later may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal described later is supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as a plurality of lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0017] Further, the substrate support unit 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. Further, the substrate support unit 11 may include a heat transfer gas supply unit configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.

[0018] The shower head 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c. Further, the shower head 13 includes at least one upper electrode. The gas introduction part may include, in addition to the shower head 13, one or more side gas injection parts (SGI: Side Gas Injector) attached to one or more openings formed in the side wall 10a.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from the corresponding gas source 21 to the shower head 13 via the corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Further, the gas supply unit 20 may include at least one flow modulation device that modulates or pulsates the flow rate of at least one process gas.

[0020] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Thereby, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Accordingly, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Also, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and the ion component in the formed plasma can be drawn into the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generation unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] Also, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is connected to at least one lower electrode and is configured to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generation unit 32b is connected to at least one upper electrode and is configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0024] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a pulse waveform that is rectangular, trapezoidal, triangular, or a combination thereof. In one embodiment, a waveform generation unit for generating a sequence of voltage pulses from a DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Accordingly, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses may have a positive polarity or a negative polarity. Also, the sequence of voltage pulses may include one or more positive-polarity voltage pulses and one or more negative-polarity voltage pulses within one period. Note that the first and second DC generation units 32a and 32b may be provided in addition to the RF power source 31, or the first DC generation unit 32a may be provided in place of the second RF generation unit 31b.

[0025] The exhaust system 40 can be connected to, for example, the gas discharge port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbo molecular pump, a dry pump, or a combination thereof.

[0026] Hereinafter, reference is made to FIG. 3. FIG. 3 is a diagram showing a substrate support portion and a lift mechanism according to one exemplary embodiment. The substrate support portion 11 and the lift mechanism 50 shown in FIG. 3 can be employed in the plasma processing apparatus 1.

[0027] As described above, the substrate support portion 11 is configured to support the edge ring UR (upper edge ring). The edge ring UR is a part of the ring assembly 112. The edge ring UR is disposed so as to surround the substrate W on the substrate support portion 11. The edge ring UR is formed of a conductive material such as silicon, silicon carbide, tungsten, or the like.

[0028] As described above, the substrate support portion 11 includes a base 1110 and an electrostatic chuck 1111. The base 1110 is a conductive member or includes a conductive member therein. A high-frequency power supply and / or at least one bias power supply is electrically coupled to the base 1110 (or its conductive member). The high-frequency power supply is the first RF generation unit 31a and constitutes the plasma generation unit 12. The at least one bias power supply includes the second RF generation unit 31b and / or the first DC generation unit 32a. The at least one bias power supply is configured to generate an electrical bias to draw ions from the plasma to the substrate W on the substrate support portion 11. The electrical bias includes the above-described bias RF signal and / or a sequence of voltage pulses.

[0029] The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a first portion P1 and a second portion P2. The first portion P1 has, as its upper surface, a substrate support surface (i.e., the central region 111a). The first portion P1 and the substrate support surface have a substantially circular planar shape. The central axis of the first portion P1 and the substrate support surface is the central axis of the substrate support portion 11. The first portion P1 includes the above-described electrostatic electrode 1111b. When a DC voltage is applied from a DC power supply to the electrostatic electrode 1111b, an electrostatic attraction is generated between the first portion P1 and the substrate W. The first portion P1 holds the substrate W by the generated electrostatic attraction.

[0030] The second part P2 extends circumferentially around the central axis of the substrate support portion 11 so as to surround the first part P1. The second part P2 has, as its upper surface, a ring support surface (i.e., the annular region 111b). The second part P2 and the ring support surface have a substantially annular planar shape. The second part P2 may include at least one electrostatic electrode. The second part P2 may include, as at least one electrostatic electrode, the electrode BEa and the electrode BEb. The electrode BEa and the electrode BEb constitute a bipolar electrode. A voltage is applied from at least one power source to the electrode BEa and the electrode BEb so that a potential difference is generated between them. Thereby, an electrostatic attraction force is generated between the edge ring UR and the second part P2. The second part P2 holds the edge ring UR by the generated electrostatic attraction force.

[0031] In one embodiment, the ring support surface extends at a position lower than the substrate support surface. In this case, the first part P1 includes a side wall surface 111s extending between the substrate support surface and the ring support surface. In this case, an edge ring LR (lower edge ring) may be disposed along the side wall surface 111s and on the ring support surface. The edge ring LR constitutes a part of the ring assembly 112. The edge ring LR may be formed of a conductive material such as silicon, silicon carbide, tungsten, etc. Alternatively, the edge ring LR may be formed of an insulating material such as quartz. In this case, the edge ring UR is disposed on the edge ring LR. The ring support surface and the side wall surface 111s are protected by the edge ring LR.

[0032] As shown in FIG. 3, the substrate support portion 11 may further include a cover ring CR and an insulating member IM. The insulating member IM is formed of an insulating material such as quartz and has a substantially cylindrical shape. The insulating member IM extends circumferentially around the central axis of the substrate support portion 11 so as to surround the base 1110 and the electrostatic chuck 1111. The cover ring CR has a substantially disc shape and is disposed on the insulating member IM so as to surround the edge ring UR.

[0033] The plasma processing apparatus 1 further includes a lift mechanism 50. The lift mechanism 50 includes a conductive ring 51, at least one rod 52, an actuator 53, and at least one connecting member 54.

[0034] The conductive ring 51 is formed of a metal such as aluminum or a conductive material and has a substantially ring shape. The conductive ring 51 extends circumferentially around the central axis of the substrate support portion 11 inside the insulating member IM so as to surround the base 1110 and the electrostatic chuck 1111. The conductive ring 51 is configured to be electrically coupled (e.g., conductively) to the edge ring UR while supporting the edge ring UR placed thereon. Note that the region exposed on the surface of the conductive ring 51 may be covered with a film having resistance to plasma. This film may be formed of a material such as an aluminum oxide film or yttrium fluoride, and may be formed by a method such as anodizing or spraying.

[0035] At least one rod 52 extends vertically below the conductive ring 51. At least one rod 52 may have insulation. In this case, it is possible to suppress the inflow of an electric bias into the actuator 53 via at least one rod 52. In one embodiment, the lift mechanism 50 may include a plurality of rods 52 as at least one rod 52. The plurality of rods 52 are arranged along the circumferential direction around the central axis of the substrate support portion 11. The plurality of rods 52 may be arranged at equal intervals along the circumferential direction.

[0036] The actuator 53 is disposed below at least one rod 52 and is connected to at least one rod 52. The actuator 53 is configured to move the edge ring up and down via at least one rod 52 and the conductive ring 51. The actuator 53 may be, for example, a pneumatic or hydraulic cylinder, or a motor.

[0037] At least one connecting member 54 provides an electrical connection between the conductive ring 51 and the base 1110 (or its conductive member). At least one connecting member 54 is configured to maintain the electrical connection in response to the movement of the conductive ring 51. At least one connecting member 54 may be configured to be deformable in response to the movement of the conductive ring 51. In addition, when the lift mechanism 50 includes a plurality of rods 52, it may include a plurality of connecting members 54 as at least one connecting member 54.

[0038] In the example shown in FIG. 3, at least one connecting member 54 includes an upper portion 54a, a deformable portion 54b, and a lower portion 54c. The upper portion 54a, the deformable portion 54b, and the lower portion 54c are formed of a conductive material. The upper portion 54a is disposed directly below the conductive ring 51 and is fixed to the conductive ring 51. The upper portion 54a is electrically connected to the conductive ring 51. The lower portion 54c is disposed below the upper portion 54a and is fixed to the base 1110. The lower portion 54c is electrically connected to the base 1110.

[0039] The deformable portion 54b extends between the upper portion 54a and the lower portion 54c. The upper end of the deformable portion 54b is fixed to the upper portion 54a, and the lower end of the deformable portion 54b is fixed to the lower portion 54c. The deformable portion 54b is electrically connected to the upper portion 54a and the lower portion 54c. The deformable portion 54b may be a bellows as shown in FIG. 3.

[0040] At least one rod 52 passes through the lower part 54c, passes through the deformed part 54b, and extends to the region directly below the upper part 54a. When at least one rod 52 is moved upward by the actuator 53, the edge ring UR is moved upward via the upper part 54a and the conductive ring 51. The edge ring UR is moved upward according to the decrease in its thickness in order to reduce the difference between the upper end position of the plasma sheath on the substrate W and the upper end position of the plasma sheath on the edge ring UR (see FIG. 12). In the plasma processing apparatus 1, even when the edge ring UR is moved upward from the electrostatic chuck 1111, the first state (for example, the conductive state) in which the base 1110 and the edge ring UR are electrically coupled to each other by the connection member 54 is maintained. In the plasma processing apparatus 1, since the edge ring UR does not become an electrically floating state, the edge ring UR can exhibit the function of reducing the difference between the upper end position of the plasma sheath on the substrate W and the upper end position of the plasma sheath on the edge ring UR.

[0041] Note that the connection member 54 may be a cylindrical member in which a plurality of slits are formed on its side wall surface so as to be elastically deformable in its longitudinal direction. For example, the connection member 54 may be a flexure.

[0042] As described above, the lift mechanism 50 can electrically couple (for example, conduct) the conductive ring 51 to the edge ring UR while supporting the edge ring UR on the conductive ring 51. That is, the lift mechanism 50 can form the first state (for example, the conductive state) in which the edge ring UR and the base 1110 are electrically coupled to each other. In the state shown in FIG. 3, the conductive ring 51 is separated downward from the edge ring UR, but in the state where the conductive ring 51 is in contact with the edge ring UR on which it is placed, the first state (for example, the conductive state) in which the edge ring UR and the base 1110 are electrically coupled to each other is formed.

[0043] In addition, the plasma processing apparatus 1 further includes a switch 80 (see FIG. 5). The switch 80 is configured to be able to switch between a first state (for example, a conductive state) in which the edge ring UR and the base 1110 are electrically coupled to each other and a second state (for example, a non-conductive state) in which the edge ring UR and the base 1110 are electrically separated from each other. The switching between the first state and the second state by the switch 80 can be controlled by the control unit 2.

[0044] In the embodiment shown in FIG. 3, the switch 80 is a lift mechanism 50. Specifically, the lift mechanism 50 can lower the conductive ring 51 downward via the rod 52 by the actuator 53 to separate the conductive ring 51 from the edge ring UR. That is, in the lift mechanism 50, the second state can be formed by separating the conductive ring 51 from the edge ring UR.

[0045] Hereinafter, refer to FIG. 4. FIG. 4 is a diagram showing a substrate support portion and a lift mechanism according to another exemplary embodiment. The substrate support portion 11 and the lift mechanism 50 shown in FIG. 4 can be adopted in the plasma processing apparatus 1. Hereinafter, the embodiment of FIG. 4 will be described from the viewpoint of the differences from the embodiment of FIG. 3.

[0046] As shown in FIG. 4, the lift mechanism 50 may have a deformed portion 54b which is a contact band instead of a bellows. The upper end of the deformed portion 54b may be fixed to the conductive ring 51. The lower end of the deformed portion 54b may be fixed to the base 1110. The deformed portion 54b shown in FIG. 4 has flexibility in the vertical direction. As shown in FIG. 4, the deformed portion 54b may have a substantially arc shape bulging outward. In this case, the insulating member IM may provide a recess in which a part of the deformed portion 54b is disposed.

[0047] The plasma processing apparatus 1 including the lift mechanism 50 shown in FIG. 4 further includes a switch 80. The switch 80 may be a part of the lift mechanism 50. The switch 80 includes a switching element and is connected between the connection member 54 and the conductive ring 51 or between the connection member 54 and the base 1110. When the switching element of the switch 80 is in the ON state (closed state), the above-described first state is formed. When the switching element of the switch 80 is in the OFF state (open state), the above-described second state is formed. The switching between the first state and the second state by the switch 80 (i.e., the switching element) may be controlled by the control unit 2.

[0048] Hereinafter, refer to FIG. 6. FIG. 6 is a diagram showing a substrate processing system according to one exemplary embodiment. The substrate processing system PS shown in FIG. 6 includes a transfer module TM, a plurality of process modules PM1 to PM7 (a plurality of substrate processing modules), and a control unit MC. The substrate processing system PS may further include bases LPa to LPd, containers FUa to FUd, a loader module LM, an aligner AN, a load lock module LL1, a load lock module LL2, and a stocker module RSM (ring stocker). Note that the number of bases, the number of containers, and the number of load lock modules in the substrate processing system PS may be any number of one or more. Also, the number of process modules in the substrate processing system PS may be any number of two or more.

[0049] The bases LPa to LPd are arranged along one edge of the loader module LM. The containers FUa to FUd are respectively mounted on the bases LPa to LPd. Each of the containers FUa to FUd is, for example, a container called a FOUP (Front Opening Unified Pod). Each of the containers FUa to FUd is configured to accommodate a substrate W therein.

[0050] The loader module LM has a transfer chamber. The pressure in the transfer chamber of the loader module LM is set to atmospheric pressure. The loader module LM has a transfer robot LMR. The transfer robot LMR is controlled by a control unit MC. The transfer robot LMR is configured to transfer a substrate W through the transfer chamber of the loader module LM. The transfer robot LMR can transfer the substrate W between each of the containers FUa to FUd and the aligner AN, between the aligner AN and each of the load lock modules LL1 and LL2, and between each of the load lock modules LL1 and LL2 and each of the containers FUa to FUd. The aligner AN is connected to the loader module LM. The aligner AN is configured to adjust (align) the position of the substrate W.

[0051] Each of the load lock modules LL1 and LL2 is connected between the transfer chamber of the loader module LM and the transfer chamber TC of the transfer module TM. Each of the load lock modules LL1 and LL2 provides a preliminary decompression chamber. A gate valve is provided between the preliminary decompression chamber of each of the load lock modules LL1 and LL2 and the transfer chamber of the loader module LM. Also, a gate valve is provided between the preliminary decompression chamber of each of the load lock modules LL1 and LL2 and the transfer chamber TC of the transfer module TM.

[0052] The transfer module TM includes a transfer chamber TC (vacuum transfer chamber) and a transfer robot TR. The transfer chamber TC is configured to be able to reduce the pressure in its internal space. The transfer robot TR includes a pick TP (end effector). The transfer robot TR may include at least two picks TP. In the illustrated example, the transfer robot TR includes two picks TP. One of the two picks TP is provided above the other. The transfer robot TR is configured to transfer a substrate W placed on any one of the two picks TP via the transfer chamber TC. The transfer robot TR is controlled by a control unit MC.

[0053] The transfer module TM may be provided with position detection sensors S11 and S12. The position detection sensors S11 and S12 are provided on the transfer path of the substrate W and the edge ring from the transfer module TM to the process module PM1. The position detection sensors S11 and S12 are used to correct the positions of the substrate W and the edge ring transferred from the transfer module TM to the process module PM1. The position detection sensors S11 and S12 are provided, for example, in the vicinity of a gate valve that partitions the transfer module TM and the process module PM1. The position detection sensors S11 and S12 are arranged such that, for example, the distance between them is smaller than the outer diameter of the substrate W and smaller than the inner diameter of the edge ring. Similar to the position detection sensors S11 and S12, the transfer module TM may be provided with position detection sensors S21, S22, S31, S32, S41, S42, S51, S52, S61, S62, S71, and S72. The position detection sensors S21 and S22 are provided on the transfer path of the substrate W and the edge ring from the transfer module TM to the process module PM2. The position detection sensors S31 and S32 are provided on the transfer path of the substrate W and the edge ring from the transfer module TM to the process module PM3. The position detection sensors S41 and S42 are provided on the transfer path of the substrate W and the edge ring from the transfer module TM to the process module PM4. The position detection sensors S51 and S52 are provided on the transfer path of the substrate W and the edge ring from the transfer module TM to the process module PM5. The position detection sensors S61 and S62 are provided on the transfer path of the substrate W and the edge ring from the transfer module TM to the process module PM6. The position detection sensors S71 and S72 are provided on the transfer path of the substrate W and the edge ring from the transfer module TM to the process module PM7.

[0054] In one embodiment, the transfer robot TR is configured to transfer an edge ring for a substrate support portion of any one of a plurality of process modules PM1 to PM7. The edge ring is an edge ring UR or a ring set including the edge ring UR and the edge ring LR. The edge ring is placed on any one of two picks TP and is transferred. Each pick TP has a sensor TS. The sensor TS is an optical sensor and is configured to measure the position on the substrate support portion of a ring member such as an edge ring.

[0055] Each of the process modules PM1 to PM7 is a device configured to perform dedicated substrate processing and has a processing chamber (substrate processing chamber). A gate valve is provided between the processing chamber and the transfer chamber TC. At least one of the process modules PM1 to PM7 is a plasma processing apparatus 1.

[0056] The stocker module RSM (ring stocker) is connected to the transfer chamber TC via a gate valve. The stocker module RSM has a chamber and can accommodate a plurality of edge rings therein.

[0057] The control unit MC is configured to control each part of the substrate processing system PS. The control unit MC can be a computer including a processor, a storage device, an input device, a display device, etc. The control unit MC executes a control program stored in the storage device and controls each part of the substrate processing system PS based on recipe data stored in the storage device.

[0058] Refer to FIG. 7 below. FIG. 7 is a diagram showing a substrate support portion and a lift mechanism according to yet another exemplary embodiment. The substrate support portion 11 and the lift mechanism 50 shown in FIG. 7 can be employed in the plasma processing apparatus 1. The plasma processing apparatus 1 including the substrate support portion 11 and the lift mechanism 50 shown in FIG. 7 can be employed as a process module of the substrate processing system PS. Hereinafter, the embodiment of FIG. 7 will be described from the viewpoint of differences from the embodiment of FIG. 3.

[0059] In the embodiment of FIG. 7, the substrate support portion 11 provides a plurality of through holes penetrating therethrough along the vertical direction. The plurality of through holes of the substrate support portion 11 are arranged along the circumferential direction around the central axis of the substrate support portion 11. The plurality of through holes of the substrate support portion 11 may be arranged at equal intervals. Further, a plurality of through holes aligned with the plurality of through holes of the substrate support portion 11 are formed in the edge ring LR.

[0060] In the embodiment of FIG. 7, the edge ring UR can be lifted upward from the substrate support portion 11 by the lift mechanism 60. The lift mechanism 60 includes a plurality of lift pins 61 and an actuator 62. Each of the plurality of lift pins 61 is inserted into a corresponding one of the plurality of through holes of the substrate support portion 11. The actuator 62 is connected to the plurality of lift pins 61 and is configured to move the plurality of lift pins 61 up and down.

[0061] When the plurality of lift pins 61 are moved upward by the actuator 62 with the upper ends of the plurality of lift pins 61 in contact with the edge ring UR, the edge ring UR is lifted upward from the substrate support portion 11. In this state, the transfer robot TR moves the pick TP below the edge ring UR. Then, as the plurality of lift pins 61 move downward, the edge ring UR is transferred to the pick TP. Thereafter, the edge ring UR is transferred to the stocker module RSM by the transfer robot TR.

[0062] Then, the edge ring UR of the replacement part is conveyed into the chamber 10 by the transfer robot TR from the stock module RSM. Then, the plurality of lift pins 61 are moved upward by the actuator 62, and the edge ring UR is transferred to the plurality of lift pins 61. Then, the pick TP moves outside the chamber 10, and the plurality of lift pins 61 move downward. Thereby, the edge ring UR of the replacement part is disposed on the substrate support portion 11.

[0063] The plasma processing apparatus 1 including the lift mechanism 50 shown in FIG. 7 includes a lift mechanism 60 as a switch 80. In the lift mechanism 60, all the lift pins 61 are formed of an insulating material. When the lift mechanism 60 positions all the lift pins 61 such that the edge ring UR is supported on the conductive ring 51 and electrically coupled to the conductive ring 51, the above-described first state is formed. When the lift mechanism 60 lifts the edge ring UR upward from the conductive ring 51 and separates it from the conductive ring 51, the above-described second state is formed.

[0064] Note that the plasma processing apparatus 1 may include another lift mechanism instead of or in addition to the lift mechanism 60. The other lift mechanism may be configured to lift a ring set including both the edge ring UR and the edge ring LR upward from the substrate support portion 11 and / or the conductive ring 51.

[0065] According to the switch 80 described above, it is possible to switch between the above-described first state and second state as needed. When the second state is formed, the electrical bias and / or the source RF signal are not supplied from the base 1110 to the edge ring UR via the conductive ring 51. According to such a switch 80, when the second state is formed, it is possible to suppress the consumption of the edge ring UR by chemical species from the plasma by performing plasma processing in the chamber 10.

[0066] Here, refer to FIG. 5. FIG. 5 is a diagram showing a switch and sensors of a plasma processing apparatus according to one exemplary embodiment. The plasma processing apparatus 1 according to various exemplary embodiments may further include at least one sensor 90 as shown in FIG. 5. The at least one sensor 90 is configured to measure the amount of deposits on the edge ring UR.

[0067] The sensor 90 may include at least one selected from the group consisting of a sensor 91, a sensor 92, and a sensor 93. The sensor 91 is an emission spectrometer and is configured to analyze the emission of plasma in the chamber 10. According to the sensor 91, different emission intensities are measured at a predetermined wavelength when there are deposits on the edge ring UR and when the deposits are removed from the edge ring UR. Therefore, according to the sensor 91, the amount of deposits on the edge ring UR can be estimated from the measured emission intensity.

[0068] The sensor 92 is an optical sensor including a light source such as a laser and is configured to detect the thickness of deposits on the edge ring UR. The sensor 92 is disposed, for example, on the top of the chamber 10. According to the sensor 92, the amount of deposits on the edge ring UR can be estimated from the measured thickness of the deposits.

[0069] The sensor 93 is an impedance measuring device and is connected to the base 1110. The impedance on the base 1110 side as seen from the sensor 93 changes according to the amount of deposits on the edge ring UR. According to the sensor 93, the amount of deposits on the edge ring UR can be estimated from the measured impedance.

[0070] Hereinafter, with reference to FIGS. 8 to 10, plasma processing methods according to various exemplary embodiments will be described. Each of FIGS. 8 to 10 is a flowchart showing a plasma processing method according to an exemplary embodiment. The plasma processing methods shown in each of FIGS. 8 to 10 can be executed using the plasma processing apparatus 1. In the plasma processing method, each part of the plasma processing apparatus 1 can be controlled by the control unit 2.

[0071] Refer to FIG. 8. The plasma processing method shown in FIG. 8 (hereinafter referred to as "method MT") starts in step STa. In step STa, a recipe is read by the control unit 2.

[0072] In the subsequent step STJ, it is determined by the control unit 2 whether the read recipe is a product recipe. The product recipe is a recipe for plasma processing of the substrate W on the substrate support unit 11. If it is determined in step STJ that the read recipe is a product recipe, the control unit 2 controls the switch 80 in step STb so as to form the above-described first state. On the other hand, if it is determined in step STJ that the read recipe is not a product recipe, the control unit 2 controls the switch 80 in step STc so as to form the above-described second state.

[0073] In the subsequent step STd, the control unit 2 executes the plasma processing specified in the read recipe. If the read recipe is a product recipe, in step STd, the control unit 2 controls each part of the plasma processing apparatus 1 so as to perform plasma processing, for example, plasma etching, on the substrate W on the substrate support unit 11 while maintaining the above-described first state. On the other hand, if the read recipe is not a product recipe, in step STd, the control unit 2 controls each part of the plasma processing apparatus 1 so as to perform plasma cleaning of the chamber 10 while maintaining the above-described second state.

[0074] Refer to FIG. 9. The plasma processing method shown in FIG. 9 (hereinafter referred to as "Method MTA") starts with step STa, similar to Method MT. In the subsequent step STAd, the control unit 2 controls each part of the plasma processing apparatus 1 to start the execution of the plasma processing specified in the loaded recipe. This plasma processing can be plasma cleaning of the chamber 10. In one example, this plasma processing is plasma cleaning for removing carbon-containing deposits on the edge ring UR. The gas used in this plasma processing includes a gas capable of removing deposits, such as an oxygen-containing gas. Note that at the start of the plasma processing, the control unit 2 may control the switch 80 to form the above-described first state.

[0075] In the subsequent step STAJ, the control unit 2 determines whether an electrical connection between the edge ring UR and the base 1110 is necessary. Specifically, when the amount of deposits on the edge ring UR identified by measurement using at least one sensor 90 is greater than a threshold value, the control unit 2 determines that an electrical connection between the edge ring UR and the base 1110 is necessary in step STAJ. On the other hand, when the amount of deposits on the edge ring UR identified by measurement using at least one sensor 90 is less than or equal to the threshold value, the control unit 2 determines that an electrical connection between the edge ring UR and the base 1110 is unnecessary in step STAJ.

[0076] Note that when the emission intensity of the plasma at a predetermined wavelength (for example, the wavelength of light emission based on carbon) measured by the sensor 91 is less than or equal to the threshold value, it may be determined in step STAJ that the amount of deposits on the edge ring UR is less than or equal to the threshold value. Alternatively, when the thickness of the deposits on the edge ring UR measured by the sensor 92 is less than or equal to the threshold value, it may be determined in step STAJ that the amount of deposits on the edge ring UR is less than or equal to the threshold value. Alternatively, when the impedance measured by the sensor 93 is less than or equal to the threshold value, it may be determined in step STAJ that the amount of deposits on the edge ring UR is less than or equal to the threshold value.

[0077] When it is determined in step STAJ that an electrical connection between the edge ring UR and the base 1110 is necessary, the control unit 2 controls the switch 80 in step STb to form the above-described first state. On the other hand, when it is determined in step STAJ that an electrical connection between the edge ring UR and the base 1110 is unnecessary, the control unit 2 controls the switch 80 in step STc to form the above-described second state.

[0078] Subsequently, in step STAJb, the control unit 2 determines whether to end the process. If it is determined in step STAJb not to end the process, the plasma process started in step STAd is continued, and the process from step STAJ is repeated. On the other hand, if it is determined in step STAJb to end the process, the control unit 2 ends method MTA.

[0079] Referring to FIG. 10. The plasma processing method shown in FIG. 10 (hereinafter referred to as "method MTB") starts in step STa, similar to method MT. And in method MTB, similar to method MT, the determination in step STJ is performed. Note that the edge ring UR is disposed on the substrate support 11 and the conductive ring 51 at the start of method MTB or immediately after step STJ.

[0080] When it is determined in step STJ that the read recipe is a product recipe, the control unit 2 controls the switch 80 in step STb1 to form the above-described first state.

[0081] Subsequently, in step STBd1, the control unit 2 controls each part of the plasma processing apparatus 1 to execute the first process specified in the read recipe. The first process includes plasma etching for forming a concave portion in the substrate W on the substrate support 11 as the plasma process specified in the recipe. The gas used in this plasma etching may include fluorocarbon and / or hydrofluorocarbon.

[0082] In the subsequent step STc1, the control unit 2 controls the switch 80 so as to form the above-described second state.

[0083] In the subsequent step STBd2, each part of the plasma processing apparatus 1 is controlled so as to execute the ashing process specified in the loaded recipe. In the ashing process, deposits are removed from the substrate W on the substrate support portion 11 by chemical species from the plasma generated from the ashing gas. The ashing gas may include an oxygen-containing gas.

[0084] In the subsequent step STb2, the control unit 2 controls the switch 80 so as to form the above-described first state.

[0085] In the subsequent step STBd3, the control unit 2 controls each part of the plasma processing apparatus 1 so as to execute the second process specified in the loaded recipe. The second process includes plasma etching for increasing the depth of the concave portion of the substrate W on the substrate support portion 11 as the plasma processing specified in the recipe. The gas used in this plasma etching may include fluorocarbon and / or hydrofluorocarbon, similar to the gas used in the first process.

[0086] Also, when it is determined in the above-described step STJ that the loaded recipe is not a product recipe, the control unit 2 controls the switch 80 so as to form the above-described second state in step STc3.

[0087] In the subsequent step STBd4, the control unit 2 controls each part of the plasma processing apparatus 1 so as to perform the plasma processing specified in the loaded recipe, that is, the first plasma cleaning of the chamber 10. The gas used in step STBd4 may include an oxygen-containing gas.

[0088] In the subsequent step STb3, the control unit 2 controls the switch 80 so as to form the above-described first state.

[0089] In the subsequent step STBd5, the control unit 2 controls each part of the plasma processing apparatus 1 so as to perform the plasma processing specified in the loaded recipe, that is, the second plasma cleaning of the chamber 10. The gas used in the step STBd5 may contain an oxygen-containing gas.

[0090] In the subsequent step STf, the edge ring on the substrate support portion 11 is replaced with an edge ring conveyed from the stocker module RSM using the transfer robot TR.

[0091] In the subsequent step STc4, the control unit 2 controls the switch 80 so as to form the above-described second state.

[0092] In the subsequent step STBd6, the control unit 2 controls each part of the plasma processing apparatus 1 so as to perform the plasma processing specified in the loaded recipe, that is, the seasoning process of the chamber 10. In the step STBd6, plasma is generated in the chamber 10 from the seasoning gas.

[0093] Hereinafter, with reference to FIG. 8, FIGS. 13 and 14 will be referred to. Each of FIGS. 13 and 14 is a diagram showing a substrate support portion and a lift mechanism according to still another exemplary embodiment. The substrate support portion 11 and the lift mechanism 50 shown in FIGS. 13 and 14 can be employed in the plasma processing apparatus 1. Each configuration in the embodiments of FIGS. 13 and 14 is substantially the same as the corresponding configuration in the embodiment of FIG. 4. The plasma processing apparatus 1 including the substrate support portion 11 and the lift mechanism 50 shown in FIGS. 13 and 14 can be used in the method MT.

[0094] As described above, when the plasma process specified by the recipe is a plasma process for the substrate W on the substrate support portion 11, the control unit 2 controls the switch 80 to form the above-described first state in the step STb. In this case, the control unit 2 controls each part of the plasma processing apparatus 1 to execute a plasma process on the substrate W in the step STd. In the state where the first state formed in the step STb is maintained and the edge ring UR is lifted upward from the edge ring LR (see FIG. 13), when the plasma process for the substrate W is performed in the step STd, deposits may be formed on the lower surface of the edge ring UR and / or the upper surface facing the lower surface of the edge ring UR (the ring support surface or the upper surface of the edge ring LR). The deposits may contain components contained in the processing gas used in the plasma process of the step STd. The deposits may be formed from a carbon-containing substance. Alternatively, the deposits may be formed from a metal-containing substance.

[0095] Also, as described above, when the plasma process specified by the recipe is the plasma cleaning of the chamber 10, the control unit 2 controls the switch 80 to form the above-described second state in the step STb. In this case, the control unit 2 controls each part of the plasma processing apparatus 1 to perform plasma cleaning in the step STd. Further, the control unit 2 controls the lift mechanism 50 so as to set the position in the height direction of the edge ring UR when the plasma cleaning is being performed (see FIG. 14) to a position higher than the position in the height direction of the edge ring UR when the above-described plasma process for the substrate W is being performed (see FIG. 13). Thereby, active species from the plasma are supplied to the space between the lower surface of the edge ring UR and the upper surface facing the lower surface of the edge ring UR (the ring support surface or the upper surface of the edge ring LR), and the removal of the above-described deposits is promoted.

[0096] When the deposit is formed from a carbon-containing material, in the plasma cleaning in step STd, a source RF signal from the first RF generation unit 31a may be supplied to generate plasma from the cleaning gas. In this case, the level of the bias signal from the bias power supply, that is, the power level of the bias RF signal or the level of the voltage pulse (the potential difference with respect to the reference potential of the voltage pulse (for example, 0V)) may be set to zero or a low level. Also, when the deposit is formed from a carbon-containing material, in the plasma cleaning in step STd, an oxygen-containing gas may be supplied into the chamber 10 as the cleaning gas to generate plasma.

[0097] When the deposit is formed from a metal-containing material, in the plasma cleaning in step STd, a source RF signal from the first RF generation unit 31a may be supplied to generate plasma from the cleaning gas. Also, in this case, the level of the bias signal from the bias power supply, that is, the power level of the bias RF signal or the level of the voltage pulse (the potential difference with respect to the reference potential of the voltage pulse (for example, 0V)) may have a high level set to remove the deposit by an ion sputter.

[0098] Hereinafter, refer to FIG. 15. FIG. 15 is a diagram showing a substrate support portion and a lift mechanism according to still another exemplary embodiment. The lift mechanism 50 shown in FIG. 15 can be employed in the plasma processing apparatus 1 instead of the lift mechanism 50 shown in FIGS. 13 and 14. Also in the plasma processing apparatus 1 including the lift mechanism 50 shown in FIG. 15, the method MT can be executed in the same manner as the plasma processing apparatus 1 including the lift mechanism 50 shown in FIGS. 13 and 14. Hereinafter, the lift mechanism 50 shown in FIG. 15 will be described from the viewpoint of the differences with respect to the lift mechanism 50 shown in FIGS. 13 and 14.

[0099] As shown in FIG. 15, the edge ring UR includes an inner peripheral portion URi and an outer peripheral portion URo. The inner peripheral portion URi extends inside the outer peripheral portion URo and is disposed above the second portion P2. The outer peripheral portion URo is located on the conductive ring 51 while being supported by the conductive ring 51. The outer peripheral portion URo has a vertical length set so as to hide the conductive ring 51 from the space on the substrate support portion 11 when plasma cleaning is being performed in the step STd. That is, the outer peripheral portion URo has a vertical length set such that the outer peripheral portion URo intervenes between the space on the substrate support portion 11 and the conductive ring 51 when plasma cleaning is being performed in the step STd. Thereby, the conductive ring 51 is protected from the plasma generated in the step STd.

[0100] Hereinafter, refer to FIG. 16. FIG. 16 is a diagram showing a substrate support portion and a lift mechanism according to still another exemplary embodiment. The lift mechanism 50 shown in FIG. 16 can be employed in the plasma processing apparatus 1 instead of the lift mechanism 50 shown in FIGS. 13 and 14. Also in the plasma processing apparatus 1 including the lift mechanism 50 shown in FIG. 16, the method MT can be executed in the same manner as the plasma processing apparatus 1 including the lift mechanism 50 shown in FIGS. 13 and 14. Hereinafter, the lift mechanism 50 shown in FIG. 16 will be described from the viewpoint of differences with respect to the lift mechanism 50 shown in FIGS. 13 and 14.

[0101] The lift mechanism 50 shown in FIG. 16 further includes a coating 51c. The coating 51c covers the surface of the conductive ring 51 and protects the conductive ring 51 from plasma. The coating 51c is formed from a material having plasma resistance (for example, yttria). The coating 51c formed between the edge ring UR and the conductive ring 51, that is, the coating 51c formed on the upper surface of the conductive ring 51 may have a capacitance of 10,000 pF or more for the electrical coupling (capacitive coupling) between the edge ring UR and the base 1110.

[0102] Refer to FIGS. 17 and 18 below. Each of FIGS. 17 and 18 is a diagram showing a substrate support portion and a lift mechanism according to yet another exemplary embodiment. The substrate support portion 11 and the lift mechanism 50 shown in FIGS. 17 and 18 can be adopted in the plasma processing apparatus 1 in place of the substrate support portion 11 and the lift mechanism 50 shown in FIGS. 13 and 14. In the plasma processing apparatus 1 including the substrate support portion 11 and the lift mechanism 50 shown in FIGS. 17 and 18, the method MT can be executed in the same manner as in the plasma processing apparatus 1 including the substrate support portion 11 and the lift mechanism 50 shown in FIGS. 13 and 14. Hereinafter, the substrate support portion 11 and the lift mechanism 50 shown in FIGS. 17 and 18 will be described from the perspective of differences with respect to the substrate support portion 11 and the lift mechanism 50 shown in FIGS. 13 and 14.

[0103] As shown in FIGS. 17 and 18, the lift mechanism 50 further includes a protection member 51p. The protection member 51p has a ring shape extending circumferentially around the central axis of the substrate support portion 11. The protection member 51p is conductive and is mounted on the conductive ring 51 so as to protect the conductive ring 51 from plasma. The protection member 51p is formed of a material having plasma resistance. The protection member 51p may be formed of the same material as that of the edge ring UR. In this embodiment, when the edge ring UR is supported by the conductive ring 51, it is electrically coupled to the conductive ring 51 via the protection member 51p.

[0104] In the embodiment shown in FIGS. 17 and 18, the plasma processing apparatus 1 further includes a lift mechanism 70. The lift mechanism 70 includes a plurality of lift pins 71 and an actuator 72. The plurality of rods 52 of the lift mechanism 50 shown in FIG. 17 and the plurality of lift pins 71 shown in FIG. 18 can be alternately arranged along the circumferential direction with respect to the central axis of the substrate support portion 11. The plurality of rods 52 and the plurality of lift pins 71 can be arranged at equal intervals.

[0105] The plurality of lift pins 71 can be inserted into a plurality of through holes penetrating the conductive ring 51 and the protection member 51p in the vertical direction. The actuator 72 is configured to move the plurality of lift pins 71 up and down under the control of the control unit 2. When the lift mechanism 70 retracts the plurality of lift pins 71 to a lower position so that the upper ends of the plurality of lift pins 71 do not contact the edge ring UR, the above-described first state is formed. Further, when the lift mechanism 70 lifts the edge ring UR upward from the protection member 51p by the plurality of lift pins 71, the above-described second state is formed. Therefore, the lift mechanism 70 constitutes the switch 80.

[0106] As described above, when the plasma treatment specified by the recipe is the plasma treatment for the substrate W on the substrate support portion 11, in the step STb, the control unit 2 controls the lift mechanism 70, that is, the switch 80, to form the above-described first state. In this case, in the step STd, the control unit 2 controls each part of the plasma processing apparatus 1 to execute the plasma treatment for the substrate W.

[0107] Further, when the plasma treatment specified by the recipe is the plasma cleaning of the chamber 10, in the step STb, the control unit 2 controls the lift mechanism 70, that is, the switch 80, to form the above-described second state. In this case, in the step STd, the control unit 2 controls each part of the plasma processing apparatus 1 to perform the plasma cleaning. Further, the control unit 2 controls the lift mechanism 70 so as to set the position of the edge ring UR in the height direction when the plasma cleaning is being performed to a position higher than the position of the edge ring UR in the height direction when the above-described plasma treatment for the substrate W is being performed. Thereby, active species from the plasma are supplied to the space between the lower surface of the edge ring UR and the upper surface (ring support surface or the upper surface of the edge ring LR) facing the lower surface of the edge ring UR, and the removal of the above-described deposits is promoted.

[0108] Refer to FIGS. 19 and 20 below. Each of FIGS. 19 and 20 is a diagram showing a substrate support portion and a lift mechanism according to still another exemplary embodiment. The substrate support portion 11 and the lift mechanism 50 shown in FIGS. 19 and 20 can be employed in the plasma processing apparatus 1 in place of the substrate support portion 11 and the lift mechanism 50 shown in FIGS. 13 and 14. In the plasma processing apparatus 1 including the substrate support portion 11 and the lift mechanism 50 shown in FIGS. 19 and 20, the method MT can be executed in the same manner as in the plasma processing apparatus 1 including the substrate support portion 11 and the lift mechanism 50 shown in FIGS. 13 and 14. Hereinafter, the substrate support portion 11 and the lift mechanism 50 shown in FIGS. 19 and 20 will be described from the viewpoint of differences from the substrate support portion 11 and the lift mechanism 50 shown in FIGS. 13 and 14.

[0109] As shown in FIGS. 19 and 20, the electrostatic chuck 1111 incorporates an electrode BEc below the edge ring UR, that is, within the second portion P2. The electrode BEc is electrically connected to the base 1110 via the switching element 81.

[0110] When the control unit 2 executes plasma processing on the substrate W in the step STd, the control unit 2 may set the state of the switching element 81 to the OFF state (open state) to disconnect the electrical connection between the electrode BEc and the base 1110. When the control unit 2 executes plasma processing on the substrate W in the step STd, the control unit 2 controls the switch 80 (switching element) so as to form the above-described first state.

[0111] When the control unit 2 executes the plasma cleaning of the chamber 10 in the process STd, the control unit 2 controls the lift mechanism 50 to set the position of the edge ring UR in the height direction to a position higher than the position of the edge ring UR in the height direction when the above-described plasma treatment is being performed on the substrate W. Further, when the control unit 2 executes the plasma cleaning of the chamber 10 in the process STd, the control unit 2 sets the state of the switching element 81 to the ON state (closed state) to establish an electrical connection between the electrode BEc and the base 1110. Further, when the control unit 2 executes the plasma cleaning of the chamber 10 in the process STd, the control unit 2 controls the switch 80 (switching element) to form the above-described second state and connect the edge ring UR to the ground via the conductive ring 51. Thereby, a high-frequency electric field corresponding to the source RF signal and / or the bias RF signal is formed between the electrode BEc and the edge ring UR. As a result, plasma is generated from the cleaning gas in the space between the lower surface of the edge ring UR and the upper surface (ring support surface or the upper surface of the edge ring LR) facing the lower surface of the edge ring UR. Thereby, plasma for removing deposits can be locally formed in the space. Note that the configuration of the embodiments shown in FIGS. 19 and 20 can also be adopted in each of the embodiments shown in FIGS. 15 and 16.

[0112] Hereinafter, an example of a processing circuit that can be used as one or more processing circuits in a plasma processing apparatus 1 such as the control unit 2 and / or one or more processing circuits in a substrate processing system PS such as the control unit MC will be described. FIG. 11 is a block diagram of a processing circuit that implements the operations described in this specification on a computer. FIG. 11 illustrates a processing circuit 130 that can be used to control control processing on any computer. The descriptions or blocks in the flowchart represent a module, segment, or part of code that includes one or more executable instructions for implementing a specific logical function or step of the processing. As will be understood by those skilled in the art, depending on the related functions, another embodiment having executable functions in an order different from the illustrated or described order, such as substantially simultaneously or in the reverse order, is included within the scope of the exemplary embodiments of the present disclosure. The various elements, features, and processes described in this specification may be used independently of each other or combined in various ways. All possible combinations and partial combinations may be included within the scope of the present disclosure.

[0113] In FIG. 11, the processing circuit 130 includes a CPU 1200 that performs one or more of the above-described / hereinafter-described control processes. The processing data and instructions may be stored in the memory 1202. These processing data and instructions may be stored in a storage medium disk 1204 such as a hard disk drive (HDD) or a portable storage medium, or may be stored remotely. Furthermore, the present disclosure described in the claims is not limited to the form of a computer-readable medium in which the instructions for the processing according to the present invention are stored. For example, these instructions may be stored in a CD, DVD, flash memory, RAM, ROM, PROM, EPROM, EEPROM, hard disk, or any other information processing device such as a server and / or computer with which the processing circuit 130 communicates.

[0114] Furthermore, the present disclosure recited in the claims may be provided as a utility application, a background daemon, a component of an operating system, or a combination thereof, and may be executed in conjunction with an operating system known to those skilled in the art such as CPU 1200 and Microsoft Windows (registered trademark), UNIX (registered trademark), Solaris (registered trademark), LINUX (registered trademark), Apple MAC-OS, etc.

[0115] The hardware elements that make up the processing circuit 130 can be realized by various circuit elements. Furthermore, each function of the above-described embodiments can be implemented by a circuit including one or more processing circuits. As shown in FIG. 11, the processing circuit includes a processing device on which a specific program has been made, for example, a processing device (CPU) 1200. The processing circuit also includes devices such as an application specific integrated circuit (ASIC) and conventional circuit components configured to implement the described functions.

[0116] In FIG. 11, the processing circuit 130 includes the CPU 1200 that performs the above-described processing. The processing circuit 130 may be a general-purpose computer or a specific dedicated machine. In one embodiment, when the processing device 1200 is programmed to control each part of the plasma processing device 1 such as the gas supply unit 20, the power supply 30, the lift mechanism 50, and the switch 80, the processing circuit 130 functions as a specific dedicated machine.

[0117] Alternatively or furthermore, as will be understood by those skilled in the art, the CPU 1200 may be implemented on an FPGA, ASIC, PLD, or using discrete logic circuits. Furthermore, the CPU 1200 may be implemented as a plurality of processing devices that cooperate to perform the instructions of the processing of the present invention described above in parallel.

[0118] The processing circuit 130 of FIG. 11 also includes a network controller 1206 for interfacing with the network 1228, such as an Intel Ethernet PRO network interface card of Intel Corporation in the United States. The network 1228 can be, as is understandable, a public network such as the Internet, a private network such as a LAN or WAN, or any combination thereof, and may also include a subnetwork such as a PSTN or ISDN. The network 1228 can also be wired, such as an Ethernet network, or wireless, such as a cellular network including an EDGE, 3G, or 4G wireless cellular system. The wireless network can also be Wi-Fi, Bluetooth (registered trademark), or any other known wireless communication form.

[0119] The processing circuit 130 further includes a display device controller 1208, such as a graphics card or graphics adapter, for interfacing with a display device 1210 such as a monitor. A general-purpose I / O interface 1212 is interfaced with a keyboard and / or mouse 1214, and a touch panel 1216 that is integrated with or separate from the display device 1210. The general-purpose I / O interface is also connected to various peripheral devices 1218 such as a printer and a scanner.

[0120] The storage device controller 1224 is connected to the storage medium disk 1204 via a communication bus 1226 such as ISA, EISA, VESA, or PCI, and all components of the processing circuit 130 are connected to each other. Regarding the general features and functions of the display device 1210, the keyboard and / or mouse 1214, the display device controller 1208, the storage device controller 1224, the network controller 1206, the audio controller 1220, and the general-purpose I / O interface 1212, the descriptions are omitted in this specification as known for the sake of simplicity.

[0121] The exemplary circuit elements described in this disclosure are replaceable with other elements and may have structures different from the examples described herein. Further, a circuit configured to implement the features described herein may be implemented in a plurality of circuit units (e.g., chips), or these features may be incorporated into the circuits of a single chipset.

[0122] The functions and features described herein may also be executed by various components distributed on the system. For example, one or more processing devices may execute the functions of these systems, in which case the processing devices are distributed across a plurality of components communicating within a network. As distributed components, in addition to various human interfaces and communication devices (display monitors, smartphones, tablets, personal digital assistants (PDAs), etc.), one or more client machines and server machines capable of sharing processing may be included. The network may be a private network such as a LAN or WAN, or a public network such as the Internet. Inputs to the system may be received by direct input from the user, or remotely in real time or as batch processing. Further, some of the embodiments may be implemented on modules or hardware that are not the same as those described above. Therefore, other embodiments are also included in the scope of the claims.

[0123] As described above, various exemplary embodiments have been described, but without being limited to the exemplary embodiments described above, various additions, omissions, substitutions, and changes may be made. Also, it is possible to combine elements in different embodiments to form other embodiments.

[0124] For example, any one of the above-described containers FUa to FUd may be used as the stocker module RSM.

[0125] Here, various exemplary embodiments included in this disclosure are described in [E1] to [E21] below.

[0126] [E1] a chamber, a substrate support portion within the chamber, a base, an electrostatic chuck on the base, the substrate support portion including the same, a plasma generation unit including a high-frequency power source and configured to generate plasma within the chamber, a bias power source configured to generate an electrical bias for drawing ions from the plasma to a substrate on the substrate support portion, wherein the bias power source and / or the high-frequency power source is electrically coupled to the base, the bias power source, an edge ring having conductivity and disposed so as to surround the substrate on the substrate support portion, a lift mechanism configured to move the edge ring up and down, a conductive ring that is electrically coupled to the edge ring while supporting the edge ring thereon, a rod extending vertically below the conductive ring, an actuator configured to move the edge ring up and down via the rod and the conductive ring, a connection member providing an electrical connection between the conductive ring and the base, the lift mechanism including the same, a switch configured to be capable of switching between a first state in which the edge ring and the base are electrically coupled to each other and a second state in which the edge ring and the base are electrically separated from each other, a control unit configured to control the switching between the first state and the second state by the switch, a plasma processing apparatus comprising the same.

[0127] [E2] The plasma processing apparatus according to E1, wherein the lift mechanism is the switch and is configured to form the second state by lowering the conductive ring by the actuator so as to separate the conductive ring from the edge ring.

[0128] [E3] The switching device includes a switching element connected between the connection member and the conductive ring or between the connection member and the base, and the plasma processing apparatus according to E1.

[0129] [E4] The switching device includes another lift mechanism configured to form the second state by lifting the edge ring from the conductive ring, and the plasma processing apparatus according to E1.

[0130] [E5] The control unit When the plasma processing specified by the recipe is the plasma processing for the substrate on the substrate support unit, controls the switching device to form the first state, When the plasma processing specified by the recipe is the plasma cleaning of the chamber, controls the switching device to form the second state, is configured as The plasma processing apparatus according to any one of E1 to E4.

[0131] [E6] The control unit When the plasma processing specified by the recipe is the plasma processing for the substrate on the substrate support unit, controls the switching device to form the first state, When the plasma processing specified by the recipe is the plasma cleaning of the chamber, controls the switching device to form the second state, Controls the lift mechanism so that the position of the edge ring in the height direction when the plasma cleaning is being performed is set higher than the position of the edge ring in the height direction when the plasma processing for the substrate is being performed, is configured as, and the plasma processing apparatus according to E3.

[0132] [E7] The edge ring includes an inner peripheral portion and an outer peripheral portion located on the conductive ring in a state where the edge ring is supported by the conductive ring, The outer peripheral portion has a vertical length set to hide the conductive ring from the space on the substrate support portion when the plasma cleaning is being performed. The plasma processing apparatus according to E6.

[0133] [E8] The lift mechanism further includes a film that covers the surface of the conductive ring and protects the conductive ring from plasma, the plasma processing apparatus according to E6.

[0134] [E9] The electrostatic chuck has an electrode built therein below the edge ring, The plasma processing apparatus further includes another switching element electrically connected between the base and the electrode, The control unit, When the plasma cleaning is being performed, controls the switching element of the switcher so as to disconnect the electrical connection between the conductive ring and the base and connect the conductive ring to the ground, When the plasma cleaning is being performed, controls the another switching element so as to electrically connect the electrode and the base to each other, Is configured as The plasma processing apparatus according to any one of E6 to E8.

[0135] [E10] The lift mechanism has conductivity and further includes a protection member mounted on the conductive ring, The control unit, When the plasma processing specified by the recipe is the plasma processing for the substrate on the substrate support portion, controls the switcher so as to form the first state, When the plasma treatment specified by the recipe is the plasma cleaning of the chamber, control the switcher to form the second state, Configure the other lift mechanism to control the position of the edge ring in the height direction when the plasma cleaning is being performed to be higher than the position of the edge ring in the height direction when the plasma treatment on the substrate is being performed and to be a position away from above the conductive ring and the protective member. The plasma processing apparatus according to E4.

[0136] [E11] The plasma processing apparatus according to E10, wherein the protective member is formed of the same material as the material of the edge ring.

[0137] [E12] The control unit In order to form a recess in the substrate on the substrate support, cause the switcher to form the first state and perform plasma etching specified by the recipe. Next, in order to remove deposits on the substrate, cause the switcher to form the second state and perform ashing processing specified by the recipe. After the ashing process, in order to increase the depth of the recess, cause the switcher to form the first state and perform plasma etching specified by the recipe. It is configured as follows. The plasma processing apparatus according to any one of E1 to E4.

[0138] [E13] The control unit With the edge ring disposed on the substrate support, cause the switcher to form the second state and perform the first plasma cleaning of the chamber specified by the recipe. Next, with the edge ring disposed on the substrate support portion, the switch is set to the first state, and the second plasma cleaning of the chamber specified by the recipe is executed. Next, after the edge ring on the substrate support portion is replaced, the switch is set to the second state, and the seasoning process of the chamber specified by the recipe is executed. It is configured as follows. The plasma processing apparatus according to any one of E1 to E4.

[0139] [E14] The plasma processing apparatus further includes a sensor configured to measure the amount of deposits on the edge ring. The control unit To remove the deposits, the switch is set to the first state, and the plasma cleaning of the chamber specified by the recipe is executed. When the amount of deposits measured by the sensor during the execution of the plasma cleaning becomes equal to or less than a threshold value, the switch is controlled to form the second state. It is configured as follows. The plasma processing apparatus according to any one of E1 to E4.

[0140] [E15] A plasma processing method performed using the plasma processing apparatus according to any one of E1 to E4, A step of the control unit reading a recipe; A step of controlling the switch according to the recipe; A step of executing a plasma process according to the recipe; A plasma processing method including:

[0141] [E16] In the step of controlling the switch, When the plasma process specified by the recipe is a plasma process for a substrate on the substrate support portion, the switch is controlled to form the first state. When the plasma treatment specified by the recipe is the plasma cleaning of the chamber, control the switcher to form the second state. The plasma processing method described in E15.

[0142] [E17] When the plasma cleaning is being performed, the position of the edge ring in the height direction is set to a position higher than the position of the edge ring in the height direction when the plasma treatment on the substrate is being executed, according to the plasma processing method described in E16.

[0143] [E18] When the plasma cleaning is being executed, the electrical connection between the conductive ring and the base is disconnected, and the conductive ring is connected to the ground. When the plasma cleaning is being executed, an electrode built in the electrostatic chuck below the edge ring and the base are electrically connected to each other by a switching element. The plasma processing method described in E17.

[0144] [E19] In the step of controlling the switcher to form a recess in the substrate on the substrate support part, cause the switcher to form the first state, and in the step of executing the plasma treatment, execute the plasma etching specified by the recipe. Next, in the step of controlling the switcher to remove the deposits on the substrate, cause the switcher to form the second state, and in the step of executing the plasma treatment, execute the ashing treatment specified by the recipe. After the ashing treatment, in the step of controlling the switcher to increase the depth of the recess, cause the switcher to form the first state, and in the step of executing the plasma treatment, execute the plasma etching specified by the recipe. The plasma processing method described in E15.

[0145] [E20] In the step of controlling the switch while the edge ring is disposed on the substrate support portion, in the step of causing the switch to form the second state and performing plasma processing, first plasma cleaning of the chamber designated by the recipe is performed. Next, in the step of controlling the switch while the edge ring is disposed on the substrate support portion, in the step of causing the switch to form the first state and performing plasma processing, second plasma cleaning of the chamber designated by the recipe is performed. Next, after the edge ring on the substrate support portion is replaced, in the step of controlling the switch, in the step of causing the switch to form the second state and performing plasma processing, seasoning processing of the chamber designated by the recipe is performed. The plasma processing method according to E15.

[0146] [E21] The plasma processing apparatus further includes a sensor configured to measure the amount of deposits on the edge ring. In order to remove the deposits, in the step of controlling the switch, in the step of causing the switch to form the first state and performing plasma processing, plasma cleaning of the chamber designated by the recipe is performed. When the amount of deposits measured by the sensor during the execution of the plasma cleaning becomes equal to or less than a threshold value, in the step of controlling the switch, the switch is controlled to form the second state. The plasma processing method according to E15.

[0147] From the above description, it will be understood that the various embodiments of the present disclosure are described herein for purposes of illustration and that various changes can be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, and the true scope and spirit are indicated by the appended claims.

Description of Symbols

[0148] 1... Plasma processing apparatus, 2... Control unit, 10... Chamber, 11... Substrate support unit, 12... Plasma generation unit, 1110... Base, 1111... Electrostatic chuck, 50... Lift mechanism, 51... Conductive ring, 52... Rod, 53... Actuator, 54... Connection member, 80... Switcher.

Claims

【Claim 1】 A chamber, a substrate support portion within the chamber, a base, an electrostatic chuck on the base, the substrate support portion including the above, a plasma generation unit including a high-frequency power source and configured to generate plasma within the chamber, a bias power source configured to generate an electrical bias for drawing ions from the plasma to a substrate on the substrate support portion, wherein the bias power source and / or the high-frequency power source are electrically coupled to the base, the bias power source, an edge ring having conductivity and disposed so as to surround the substrate on the substrate support portion, a lift mechanism configured to move the edge ring up and down, a conductive ring that electrically couples the edge ring while supporting the edge ring placed thereon, a rod extending vertically below the conductive ring, an actuator configured to move the edge ring up and down via the rod and the conductive ring, a connection member providing an electrical connection between the conductive ring and the base, the lift mechanism including the above, a switch configured to be able to switch between a first state in which the edge ring and the base are electrically coupled to each other and a second state in which the edge ring and the base are electrically separated from each other, a control unit configured to control the switching between the first state and the second state by the switch, A plasma processing apparatus comprising the above.

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