Target and method for producing target

Abstract

To provide: a target which is suitable for the production of a delafossite-type oxide thin film; and a method for producing the same.SOLUTION: The target includes 45 at% or more and 90 at% or less of a first metal, with the balance being made up of a second metal and impurities. The first metal is palladium or platinum, the second metal is cobalt, chromium or rhodium, the content of impurities is 500 mass ppm or less, and the content of oxygen as an impurity is 200 mass ppm or less.SELECTED DRAWING: None

Description

Technical Field

[0001] The present invention relates to a target and a method for manufacturing the target.

Background Art

[0002] Patent Document 1 discloses a sputtering target made of cobalt or a cobalt-based alloy and a method for manufacturing the same. The average of the PTF (leakage magnetic flux) in the direction perpendicular to the sputtering surface when measured at a thickness of 3 mm of this target is 75% or more, and the standard deviation of the PTF in the direction perpendicular to the sputtering surface is 5% or less. This target has a composition consisting of Co and inevitable impurities, or contains one or more elements selected from the group consisting of Pt, Cr, Ni, Fe, Pd, Ir, Ru, B, Si, Ge, Mn, Ti, Zr, V, and Ta. Further, this manufacturing method has a composition consisting of Co and inevitable impurities, or contains one or more elements selected from the group consisting of Pt, Cr, Ni, Fe, Pd, Ir, Ru, B, Si, Ge, Mn, Ti, Zr, V, and Ta, and the content of each element is respectively Pt: 5 mass% or less, Cr: 5 mass% or less, Ni: 25 mass% or less, Fe: 9 mass% or less, Pd: 25 mass% or less, Ir: 25 mass% or less, Ru: 25 mass% or less, B: 0.5 mass% or less, Si: 2 mass% or less, Ge: 18 mass% or less, Mn: 25 mass% or less, Ti: 2 mass% or less, Zr: 1 mass% or less, V: 1.5 mass% or less, Ta: 3 mass% or less, and the balance consists of Co and inevitable impurities, and a step of preparing a raw material powder having a D10 of 10 μm or more and a D90 of 150 μm or less on a volume basis by a laser diffraction method, and a preheating temperature of 600 to 900 ° C., an electron beam acceleration voltage of 50 to 70 kV, a shaping layer thickness of 50 to 100 μm / layer, and a beam scan speed of 500 to 5000 m / s, and shaping the raw material powder into a desired target shape by an additive manufacturing method. In this manufacturing method, as an example of the additive manufacturing method, there is mentioned a powder bed melting bonding method (PBF) in which the surface vicinity of the powder bed is selectively melted and solidified by heating by electron beam melting (EBM) or laser melting (SLM), and the operation is repeated for laminated shaping.

[0003] Patent Document 2 describes a method for manufacturing a sputtering target material. This manufacturing method is a sputtering target material made of a magnetic alloy obtained by hot solidification molding of powder, and uses a powder raw material composed of at least one element selected from the element group consisting of Fe, Co, and Ni, which are elements in the 4th period of Group 8A of the periodic table, or uses a powder raw material composed of at least one element selected from the element group consisting of Fe, Co, and Ni, which are elements in the 4th period of Group 8A of the periodic table, and having as the main component an element with a total of 60 at.% or more, and the balance being at least one element selected from the element group consisting of Al, Ag, Au, B, C, Ce, Cr, Cu, Ga, Ge, Dy, Gd, Hf, In, La, Mn, Mo, Nb, Nd, P, Pd, Pt, Ru, Si, Sm, Sn, Ta, Ti, V, W, Y, Zn, and Zr and inevitable impurities. It is a method for manufacturing a sputtering target material by hot solidification molding of powder and then cooling to 300°C at a cooling rate of 144 to 36000°C / hr to manufacture the sputtering target material. Patent Document 2 discloses a target with Co as the main component and containing 1 at% of Pd, and a target with Co as the main component and containing 1 at% of Pt.

[0004] For example, as disclosed in Patent Document 3, power devices (also referred to as power semiconductors, power elements, or power semiconductor elements) used in power converters such as inverters and converters are in increasing demand due to, for example, the popularization of electric vehicles (EVs). As an oxide for power devices, for example, gallium oxide is known.

[0005] Non-Patent Document 1 discloses a case where a large Schottky barrier of 1.8 eV was realized in a PdCoO2 thin film. The PdCoO2 thin film was manufactured by the pulsed laser deposition method. In Non-Patent Document 1, at the interface between PdCoO2 and a thermally stable oxide, such as the interface between PdCoO2 and β-Ga2O3, a polar layered structure electric dipole is naturally formed. Therefore, even in a high-temperature environment such as 350 °C, 8 it has been shown that current rectification is realized with a large on / off ratio approaching the 10

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Patent Document 2

Patent Document 3

Non-Patent Documents

[0007]

Non-Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0008] As disclosed in Patent Document 3, gallium oxide has a large bandgap, a large breakdown electric field, high thermal stability, and excellent chemical resistance. Therefore, it is excellent as a semiconductor for power devices, and the demand for power device applications is expected to increase. However, the conventional Schottky electrode using platinum has, for example, a small Schottky barrier and is not sufficient in terms of heat resistance and reliability (voltage resistance) in applications where excellent semiconductors such as gallium oxide are used, for example, in applications where high power is required.

[0009] Here, palladium cobalt oxide (PdCoO2) as disclosed in Non-Patent Document 1, palladium chromium oxide (PdCrO2), palladium rhodium oxide (PdRhO2), or platinum cobalt oxide (PtCoO2), which are delafossite-type oxides similar to palladium cobalt oxide, exhibit high electrical conductivity comparable to that of simple metals such as gold, silver, and copper despite being oxides. Therefore, it is expected to be utilized as a Schottky electrode for excellent power devices such as gallium oxide.

[0010] In a semiconductor device, an electrode is formed by depositing an electrode material, for example, by sputtering. Therefore, as disclosed in Patent Documents 1 and 2, for example, a sputtering target suitable for manufacturing a desired thin film has been studied. However, in the prior art, a target suitable for forming a film of the above-mentioned delafossite-type oxide could not be provided. For example, in a conventional target, a large amount of particles may be generated during the formation of a delafossite-type oxide thin film, or an unnecessary oxide may be generated, and the crystal structure of the delafossite-type oxide may not be constructed. Therefore, it is desired to provide a target suitable for manufacturing a delafossite-type oxide thin film.

[0011] The present invention has been made in view of such circumstances, and an object thereof is to provide a target suitable for manufacturing a delafossite-type oxide thin film and a method for manufacturing the same.

Means for Solving the Problems

[0012] The target according to the present invention for achieving the above object is containing 45 at% or more and 90 at% or less of a first metal, the balance being a second metal and impurities, the first metal being palladium or platinum, the second metal being cobalt, chromium or rhodium, the content of the impurities being 500 mass ppm or less, and oxygen as the impurity being 200 mass ppm or less.

[0013] The method for manufacturing a target according to the present invention for achieving the above object includes a step of sintering a metal powder containing 45 at% or more and 90 at% or less of a first metal, the balance being a second metal and impurities, the content of the impurities being 500 mass ppm or less, and oxygen as the impurity being 200 mass ppm or less.

Advantages of the Invention

[0014] According to the present disclosure, it is possible to provide a target suitable for manufacturing a delafossite-type oxide thin film and a method for manufacturing the same.

Brief Description of the Drawings

[0015]

Figure 1

Figure 2

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Figure 8

Embodiments for Carrying Out the Invention

[0016] With reference to the drawings, the target and the method for manufacturing the target according to the embodiments of the present disclosure will be described. First, an overview of the target and the method for manufacturing the target according to the present embodiment will be described.

[0017] The target according to the present embodiment contains 45 at% or more and 90 at% or less of a first metal, and the balance is a second metal and impurities. The first metal is palladium or platinum. The second metal is cobalt, chromium, or rhodium. The content of impurities is 500 mass ppm or less, and oxygen as an impurity is 200 mass ppm or less. Note that "at%" is the elemental ratio indicated by %.

[0018] The target according to the present embodiment is suitable for manufacturing delafossite-type oxide thin films.

[0019] The target according to the present embodiment can be manufactured, for example, by a manufacturing method including a step of sintering metal powder containing 45 at% or more and 90 at% or less of a first metal, and the balance being a second metal and impurities. The content of impurities in the metal powder is 500 mass ppm or less, and oxygen as an impurity is 200 mass ppm or less.

[0020] Hereinafter, the target and the method for manufacturing the target according to the present embodiment will be described in detail.

[0021] The target according to this embodiment is suitable for the production of delafossite-type oxide thin films by physical vapor deposition methods such as sputtering (PVD method, hereinafter simply referred to as PVD). A delafossite-type oxide is an oxide represented by the general formula ABO2. In this embodiment, cases where the delafossite-type oxide is palladium cobalt oxide (PdCoO2), palladium chromium oxide (PdCrO2), platinum cobalt oxide (PtCoO2), and palladium rhodium oxide (PdRhO2) having a delafossite-type crystal structure will be exemplified and described.

[0022] The target according to this embodiment includes a first metal and a second metal. The first metal is element A (monovalent cation) in the above general formula. The second metal is element B (trivalent cation) in the above general formula. The target according to this embodiment may contain impurities.

[0023] The first metal is palladium (Pd) or platinum (Pt). The target contains 45 at% or more and 90 at% or less of the first metal. The target preferably contains 45 at% or more and 60 at% or less of the first metal, and more preferably 50 at% or more and 55 at% or less of the first metal.

[0024] The second metal is cobalt (Co), chromium (Cr), or rhodium (Rh). The target contains 10 at% or more and 55 at% or less of the second metal. The target preferably contains 40 at% or more and 55 at% or less of the second metal, and more preferably 45 at% or more and 50 at% or less of the second metal.

[0025] By including the first metal and the second metal in the target according to the present embodiment in the above ratio, the target according to the present embodiment becomes suitable for manufacturing a delafossite-type oxide thin film. Specifically, when manufacturing a delafossite-type oxide thin film (hereinafter sometimes simply referred to as a thin film) by PVD using the target according to the present embodiment, the ratio of the delafossite-type oxide in this thin film can be increased. In other words, the ratio of metals and metal oxides other than the delafossite-type oxide in the thin film can be decreased. Thereby, the electrical resistivity when the thin film is used as an electrode can be decreased, and the thin film can be made more suitable as an electrode.

[0026] In the present embodiment, an impurity means an element that is not intentionally added. In the target according to the present embodiment, the total amount of impurities is suppressed to 500 mass ppm or less (hereinafter simply described as ppm). It is preferable that the impurities are suppressed to 300 ppm or less, and further preferably 200 ppm or less, for each element. In the present embodiment, the concentration of impurities is a value measured by an ICP emission spectrometer.

[0027] The target according to the present embodiment may contain oxygen (O), nitrogen (N), carbon (C), sulfur (S), and other inevitable impurities as impurities. Among these, oxygen is suppressed to 200 ppm or less. By reducing the oxygen content, the content of metal oxides other than the delafossite-type oxide in the thin film may be reduced.

[0028] The target according to the present embodiment may be a sintered body of metal powder containing the first metal and the second metal. The metal powder may be a mixed powder of the powder of the first metal and the powder of the second metal, or may be a powder of an alloy of the first metal and the second metal (hereinafter referred to as an alloy powder). The metal powder is preferably an alloy powder.

[0029] When the target according to this embodiment is a sintered body, by using an alloy powder as the metal powder, the thin film can be made homogeneous. Specifically, the thin film being homogeneous means, for example, that the distribution of delafossite-type oxide in the thin film is homogeneous, or the distribution of constituent elements in the thin film is homogeneous, or the distribution of impurities is homogeneous. In other words, the thin film being homogeneous means, for example, when mapping the element distribution in the thin film using SEM (Scanning Electron Microscope) and EDX (Energy dispersive X-ray spectrometry), the variation in the element distribution is in a state indicating that the elements exist in a solid solution state.

[0030] Here, the variation in the element distribution being the variation at the noise level means, for example, the case where the size of the domain of the first metal is 5 μm or less in equivalent circle diameter when mapping the cross-section of the target with SEM-EDX. In this embodiment, the domain of the first metal is defined as a single closed region on the side where the element ratio of the second metal is lower than the above threshold when binarizing the image mapping the second metal with a predetermined element ratio of the second metal (in this embodiment, 50 at%) as the threshold. The size of this domain is preferably 5 μm or less in equivalent circle diameter converted from the area. The size of this domain is more preferably 3 μm or less, and even more preferably 1 μm or less.

[0031] The target according to this embodiment preferably has a density of 90% or more and 99% or less. When the density of the target is low, that is, when there are many voids present inside the target, especially when the voids are large, it causes abnormal discharge during PVD such as sputtering and causes particles to be mixed into the thin film during film formation. By increasing the density to this extent, the mixing of particles into the thin film during film formation by PVD is suppressed. As a result, the thin film can be made more suitable as an electrode. The density is a value calculated based on the density of the alloy of the first metal and the second metal (hereinafter referred to as the alloy density) calculated based on the content ratio of the first metal and the second metal and the apparent density of the target (hereinafter referred to as the target density). That is, the density (%) is a value obtained by dividing the target density by the alloy density and multiplying by 100. The target density is a value obtained by dividing the mass of the target by the shape (volume) of the target.

[0032] When manufacturing the target according to this embodiment as a sintered body, it is sufficient to sinter metal powder containing 45 at% or more and 90 at% or less of the first metal, with the balance being the second metal and impurities. When manufacturing the target according to this embodiment as a sintered body, preferably, metal powder containing 45 at% or more and 60 at% or less of the first metal, and more preferably 50 at% or more and 55 at% or less of the first metal, may be sintered.

[0033] At the time of this sintering, if the metal powder is made into alloy powder containing 45 at% or more and 90 at% or less of the first metal, with the balance being the second metal and impurities, the target can be manufactured as a sintered body of the alloy powder. Thereby, the concentration unevenness (variation in element ratio, variation in distribution) of the first metal and the second metal in the target can be reduced. By reducing the concentration unevenness of the first metal and the second metal in the target, the thin film can be made homogeneous.

[0034] Note that at the time of sintering, if a mixed powder of the powder of the first metal and the powder of the second metal is used as the metal powder, the target can also be manufactured as a sintered body of the mixed powder.

[0035] The particle size of the metal powder used for sintering is preferably 20 μm or more and 120 μm or less, more preferably 50 μm or more and 70 μm or less, in terms of volume average diameter. Alternatively, it may be a product passing through a sieve with an opening of 106 μm. If the particle size of the metal powder is within this range, it is easy to manufacture a target with high density. In this embodiment, the particle size and particle size distribution of the metal powder are measured by a laser diffraction type particle size distribution measuring device (manufactured by Shimadzu Corporation, model: SLDA-2300) in a state where the metal powder is dispersed in water to which a surfactant has been added.

[0036] In particular, when the metal powder used for sintering is a mixed powder, the particle diameter of each of the first metal and second metal powders is preferably 20 μm or more and 120 μm or less in terms of volume average diameter. This may reduce the concentration unevenness (element ratio variation, distribution variation) of the first metal and the second metal in the target. By reducing the concentration unevenness of the first metal and the second metal in the target, the thin film can be made homogeneous.

[0037] The step of sintering the metal powder (hereinafter referred to as the sintering step) may be carried out according to the procedure described below.

[0038] The sintering step may include a forming step of forming the metal powder into a predetermined shape, for example, a disk shape suitable for use as a target. In the sintering step, for example, the metal powder is pressurized while being heated, so that the metal powder can be sintered while being formed into the predetermined shape.

[0039] In the sintering step, the metal powder may be sintered at a temperature of 550° C. to 800° C. In addition, in the sintering step, the metal powder may be sintered while applying a pressure of 30 MPa to 70 MPa. This makes it possible to obtain a target with a high density, specifically, a density of 90% to 99%, as a sintered body. EXAMPLES

[0040] Example 1 The target according to Example 1 was manufactured as follows.

[0041] Alloy powder (manufactured by Tanaka Kikinzoku Kogyo Co., Ltd., volume average diameter is 60 μm) produced by the gas atomization method, in which the composition ratio of the alloy composition of palladium and cobalt is 50:50 (the content of palladium and cobalt is about 50 at% respectively), and the balance is cobalt and impurities (the amount of impurities is 351 ppm or less, and oxygen is 25 ppm), was weighed 93 g, filled into a mold as powder for sintering, and hot press sintered under pressure (the atmosphere during sintering is 5×10 -2 Pa or less). The alloy powder was weighed for both elements (both metals) so that the composition ratio of the alloy composition of palladium and cobalt was 50:50, heated to 1500 °C or higher to form an alloy melt, then gas atomized to form atomized powder, and the atomized powder was classified with a sieve having an aperture of 106 μm.

[0042] Then, the shape of the sintered product was processed to obtain a disc-shaped target as the target according to this example. For subsequent use, the plate surface and side surface of the disc of the target were polished with emery paper to adjust the shape. The target after shape adjustment is disc-shaped with a diameter of 48 mm and a thickness t of around 2.5 mm. The pressure during sintering by the hot press sintering method (the pressure applied to the powder in the mold, hereinafter referred to as the sintering pressure) was 50 MPa, and the furnace temperature during sintering (hereinafter referred to as the sintering temperature) was 700 °C. The sintering time (the time to maintain the above sintering pressure and sintering temperature) was 60 minutes. The inside of the furnace during sintering was under a vacuum atmosphere.

[0043] When the amount of impurities in the target according to this example was quantified with an ICP emission spectrometer, oxygen was 21 ppm, nitrogen was 3 ppm, carbon was 17 ppm, and sulfur was 6 ppm, and a target with high purity of palladium and cobalt and in a metallic state (not oxidized) was obtained.

[0044] Note that the element ratio of palladium to cobalt in the target according to this embodiment maintained the element ratio in the state of the powder for sintering (alloy powder). Maintaining the element ratio in the state of the powder for sintering means that the ratio of the element ratio of cobalt (element B) to the element ratio of palladium (element A) in the state of the powder for sintering is the same as the ratio of the element ratio of cobalt (element B) to the element ratio of palladium (element A) in the targeted state within an error of 1% or less.

[0045] The density of the target according to this embodiment was 95.9%.

[0046] Figures 1 and 2 show the mapping image of palladium (L line) (see Figure 1) and the mapping image of cobalt (K line) (see Figure 2) in the target according to this embodiment measured by SEM-EDX (manufactured by JEOL Ltd., model: JCM-6000Plus, magnification: 400 times). In Figures 1 and 2, the closer to white, the higher the element ratio (concentration) of the element being mapped. Figure 3 shows the mapping image (hereinafter referred to as the binarized image) obtained by binarizing the cobalt mapping image shown in Figure 2 based on the element ratio threshold (50 at%). In Figure 3, the white part indicates that the element ratio of the cobalt being mapped is relatively higher than the above threshold. And in Figure 3, the black part indicates the part where the element ratio of the cobalt element is relatively lower than the above threshold, that is, the domain of palladium (the first metal). The equivalent circle diameter of the cobalt domain measured based on the binarized image of Figure 3 was 5 μm or less. In these mapping images, almost no concentration unevenness of palladium or cobalt was confirmed, and it was confirmed that the dispersion state was extremely good and in a solid solution state. From this result, it was determined that the target according to this embodiment was in a state of being homogeneously alloyed.

[0047] (Example 2) The target according to Example 2 was different from Example 1 in that a mixed powder of palladium powder and cobalt powder was used as the powder for sintering instead of the alloy powder, and was otherwise manufactured in the same manner as Example 1.

[0048] Palladium powder was prepared as powder produced by a chemical reduction method (manufactured by Tanaka Kikinzoku Kogyo K.K., passed through a sieve with an opening size of 106 μm) with an impurity content of 245 ppm. Also, cobalt powder was prepared as powder produced by a gas atomization method (with an impurity content of 246 ppm). Then, 59.85 g of palladium powder and 33.15 g of cobalt powder were weighed, and these were mixed in a mortar for 10 minutes to obtain a mixed powder. Then, 93 g of the mixed powder was weighed and filled into a molding die, and a disk-shaped target was obtained in the same manner as in Example 1 below. The cobalt powder was obtained by heating cobalt to 1500 °C or higher to form a molten metal, then gas atomizing it into atomized powder, and classifying the atomized powder with a sieve having an opening size of 106 μm.

[0049] The impurity content of the target according to this example was 171 ppm for oxygen, 40 ppm for nitrogen, 27 ppm for carbon, and 9 ppm for sulfur. A target with high purity of palladium and cobalt and in a metallic state (not oxidized) was obtained.

[0050] In the target according to this example, the elemental ratio of palladium to cobalt maintained the elemental ratio in the state of the powder for sintering (mixed powder).

[0051] The density of the target according to this example was 95.1%.

[0052] 4 and 5 show a mapping image of palladium (see FIG. 4) and a mapping image of cobalt (see FIG. 5) in the target according to this embodiment, which were measured in the same manner as in Example 1. In FIG. 4 and FIG. 5, the closer to white the image, the higher the element ratio of the element to be mapped. In these mapping images, the uneven concentration of palladium and cobalt was clearly confirmed. It was determined that the target according to this embodiment has a mixed and dispersed state of a part with a high element ratio (concentration) of palladium and a part with a high element ratio (concentration) of cobalt. From the observation results of these images, it was found that the size of the domain of the part with a high element ratio (concentration) of palladium and the size of the domain of the part with a high element ratio (concentration) of cobalt generally correspond to the particle size of the powder used for sintering. That is, in the target sintered using the mixed powder, it is considered that the domain of each element corresponding to the particle size of the mixed powder used for sintering remains. FIG. 6 is a binarized diagram of FIG. 5 obtained in the same manner as FIG. 3. The black areas indicate domains of palladium where the atomic ratio of the element cobalt is relatively lower than the threshold value.

[0053] Furthermore, using the targets of Examples 1 and 2, a thin film of palladium cobalt oxide was formed by reactive sputtering using RF sputtering, and this was evaluated by X-ray diffraction.

[0054] The substrate used for thin film formation was an Al2O3 (sapphire) substrate (0001), which had been annealed at 1100°C for two hours.

[0055] The sputtering was performed using a sputtering device (model: ESCS-232S) manufactured by Eiko Engineering Co., Ltd.

[0056] The RF output was set to 60 W. The RF frequency was 13.56 MHz.

[0057] The pressure in the chamber in which the film was formed was set to 0.2 Pa.

[0058] The TS distance (the distance from the target surface of the sputtering apparatus cathode to the substrate) was set to 150 mm.

[0059] For reactive sputtering, the reactive gas was a mixed gas of argon (Ar) and oxygen (O2). The flow rate of the reactive gas in the chamber was 4 sccm for argon and 12 sccm for oxygen.

[0060] When using the target of Example 1, the temperature of the substrate was set to 700 °C. When using the target of Example 2, the temperature of the substrate was set to 600 °C.

[0061] Fig. 7 shows the X-ray diffraction pattern of the thin film formed using the target according to Example 1 (the target manufactured using alloy powder). Fig. 8 shows the X-ray diffraction pattern of the thin film formed using the target according to Example 2 (the target manufactured using mixed powder).

[0062] In Fig. 7 and Fig. 8, the peaks of the (0003) plane, (0006) plane, and (0009) plane of palladium cobalt oxide are indicated by reference signs a, b, and c, respectively, in the X-ray diffraction pattern.

[0063] From these peaks, it can be seen that the thin films formed using the targets of Examples 1 and 2 are thin films of palladium cobalt oxide, which is a delafossite-type oxide.

[0064] In Fig. 7 and Fig. 8, the peak of the (222) plane of cobalt tetroxide (Co3O4) is indicated by reference sign d in the X-ray diffraction pattern. Also, in Fig. 8, the peak of the (101) plane of palladium oxide (PdO) is indicated by reference sign e in the X-ray diffraction pattern. Note that in these diffraction patterns, the peak of metallic palladium (Pd) was not observed.

[0065] That is, in the thin film formed using the target of Example 1, only a very small amount of cobalt trioxide remains in the thin film of palladium cobalt oxide to the extent that a peak remains slightly, and it can be seen that metallic palladium or palladium oxide is not contained or is contained only to the extent that a peak cannot be observed.

[0066] In the thin film formed using the target of Example 2, a very small amount of cobalt trioxide and palladium oxide remain in the thin film of palladium cobalt oxide to the extent that a peak remains slightly, and it can be seen that metallic palladium is not contained or is contained only to the extent that a peak cannot be observed.

[0067] Furthermore, when the element ratio of palladium and cobalt in the thin films formed using the targets of Examples 1 and 2 (targets with a composition ratio of Pd and Co of 50 to 50) was measured with an ICP emission spectrometer, in any of the thin films, Pd:Co was in the range of 48.8 - 49.0:51.2 - 51.0. For this reason, it was found that the thin films were homogeneous.

[0068] As described above, it is possible to provide a target suitable for manufacturing a delafossite-type oxide thin film and a method for manufacturing the same.

[0069] It should be noted that the embodiments disclosed in this specification are examples, and the embodiments of the present invention are not limited thereto, and can be appropriately modified within the scope not departing from the object of the present invention.

Industrial Applicability

[0070] The present invention can be applied to the target and its manufacturing method.

Claims

1. containing 45 at% or more and 90 at% or less of a first metal, the balance being a second metal and impurities, wherein the first metal is palladium or platinum, the second metal is cobalt, chromium or rhodium, the content of the impurities is 500 mass ppm or less, and the oxygen as the impurities is 200 mass ppm or less, a target.

2. The target according to Claim 1, containing 45 at% or more and 60 at% or less of the first metal.

3. The target according to Claim 1 or 2, which is a sintered body of alloy powder of the first metal and the second metal.

4. The target according to Claim 1 or 2, wherein the density calculated based on the content ratio of the first metal and the second metal is 90% or more and 99% or less.

5. The target according to Claim 1 or 2, wherein when the cross-section is mapped by SEM-EDX, the size of the domain of the first metal is 5 μm or less in terms of equivalent circle diameter.

6. containing 45 at% or more and 90 at% or less of a first metal, including the step of sintering metal powder in which the balance is a second metal and impurities, the content of the impurities is 500 mass ppm or less, and the oxygen as the impurities is 200 mass ppm or less, a method for manufacturing a target.

7. The method for manufacturing a target according to Claim 6, containing 45 at% or more and 60 at% or less of the first metal.

8. The method for manufacturing a target according to Claim 6 or 7, wherein the metal powder is alloy powder of the first metal and the second metal.

9. The method for manufacturing a target according to Claim 6 or 7, wherein the metal powder has a volume average diameter of 20 μm or more and 120 μm or less.

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