Adhesive tape

Abstract

To provide an adhesive tape that has, as a carrier material, excellent release performance of components of a semiconductor device and can suppress scraping of an adhesive layer even when plasma cleaning is conducted.SOLUTION: An adhesive tape comprises: at least one substrate layer and a first adhesive layer on one surface of the substrate layer, where the first adhesive layer has a shear storage modulus G' at -30°C of 350000 Pa or less, as measured by dynamic viscoelasticity measurement at a frequency if 1 Hz and satisfies at least one constitution selected from the following first constitution, the following second constitution and the following third constitution. The first constitution: the first adhesive layer comprises a radical scavenger or a radical inhibitor, the second constitution; the first adhesive layer comprises an inorganic filler, and the third constitution: the adhesive tape comprises the substrate layer, the first adhesive layer, a metal layer, and the second adhesive layer in this order.SELECTED DRAWING: None

Description

Technical Field

[0001] The present invention relates to an adhesive tape.

Background Art

[0002] In the manufacturing process of semiconductor devices, parts of semiconductor devices such as a large number of chips arranged on an adhesive layer may be transferred onto a drive circuit board. For example, a micro LED display is a display device in which each of the chips constituting a pixel is a fine light emitting diode (LED) chip, and this micro LED chip emits light spontaneously to display an image. The micro LED display has high contrast, a high response speed, and can also be thinned because it does not require a color filter used in a liquid crystal display, an organic EL display, etc. Therefore, it is attracting attention as a next-generation display device. In a micro LED display, a large number of micro LED chips are densely laid out in a planar manner.

[0003] In the manufacturing process of such semiconductor devices as a micro LED display, for example, a transfer laminate in which a large number of chips are arranged on an adhesive layer is opposed to a drive circuit board, and the chips are peeled off from the transfer laminate to make an electrical connection with the drive circuit board (transfer process).

[0004] As a method for peeling a chip from a transfer laminate, for example, a method of irradiating laser light while focusing on the adhesive layer from the back surface of the support of the transfer laminate is known (for example, Patent Document 1). Such a method is also called laser ablation. Further, a method is also known in which thermally expandable particles, thermally expandable microcapsules, etc. are blended in the adhesive layer, and the thermally expandable particles, thermally expandable microcapsules, etc. are thermally expanded by thermocompression bonding between the transfer laminate and the drive circuit board, thereby peeling the chip due to a decrease in the adhesive area caused by deformation of the adhesive layer (for example, Patent Documents 2 and 3). Further, a method is also known in which a chip is directly adhered to the transfer destination laminate and directly peeled off using the difference in peeling force.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0006] In the transfer of components of semiconductor devices such as chips, in order to transfer components of semiconductor devices such as chips arranged on a transfer laminate to another location, they may be transferred to a carrier material such as an adhesive tape instead of on a drive circuit board. The components of the semiconductor device held by the carrier material are plasma-cleaned together with the carrier material to remove residues on the components, and then re-transferred from the carrier material to a drive circuit board or the like. The adhesive tape used as the carrier material is required to have a component transfer performance for semiconductor devices that can satisfactorily adhere to (catch) the components of the semiconductor device peeled from the transfer laminate on the adhesive layer. However, in the case of conventional adhesive tapes, when plasma cleaning (for example, cleaning with O2 plasma) is performed, the adhesive layer that holds the components of the semiconductor device on the carrier material is scraped off, and the components of the semiconductor device such as chips are toppled over, making it difficult to re-transfer from the carrier material to the drive circuit board or the like.

[0007] An object of the present invention is to provide an adhesive tape that is excellent in the component transfer performance of a semiconductor device as a carrier material and can suppress scraping of the adhesive layer even when plasma cleaning is performed.

Means for Solving the Problems

[0008] The present disclosure 1 is an adhesive tape having at least one layer of a base material layer and a first adhesive layer on one surface of the base material layer, wherein the first adhesive layer has a shear storage modulus G' at -30 °C measured by dynamic viscoelasticity measurement at a frequency of 1 Hz of 350,000 Pa or less, and satisfies at least one configuration selected from the group consisting of the following first configuration, the following second configuration, and the following third configuration. First configuration: The first adhesive layer contains a radical scavenger or a radical inhibitor. Second configuration: The first adhesive layer contains an inorganic filler. Third configuration: The adhesive tape has the base material layer, the first adhesive layer, a metal layer, and a second adhesive layer in this order. The present disclosure 2 is the adhesive tape of the present disclosure 1 that satisfies the first configuration. The present disclosure 3 is the adhesive tape of the present disclosure 1 or 2, wherein in the first configuration, the radical scavenger or the radical inhibitor includes at least one radical scavenger or radical inhibitor selected from the group consisting of a phenolic radical scavenger or a phenolic radical inhibitor, a phosphite-based radical scavenger or a phosphite-based radical inhibitor, and a hindered amine-based radical scavenger or a hindered amine-based radical inhibitor. The present disclosure 4 is the pressure-sensitive adhesive tape of the present disclosure 3, wherein the radical scavenger or radical inhibitor includes the phenolic radical scavenger or phenolic radical inhibitor and the phosphite-based radical scavenger or phosphite-based radical inhibitor. The present disclosure 5 is the pressure-sensitive adhesive tape of the present disclosure 3 or 4, wherein the phenolic radical scavenger or phenolic radical inhibitor includes a res hindered phenolic radical scavenger or res hindered phenolic radical inhibitor. The present disclosure 6 is the pressure-sensitive adhesive tape of the present disclosure 3, 4 or 5, wherein the hindered amine-based radical scavenger or hindered amine-based radical inhibitor includes a compound having at least one selected from the group consisting of an N-H group, an N-CH3 group, and an N-O-R (R represents a linear or branched alkyl group) structure. The present disclosure 7 is the pressure-sensitive adhesive tape of the present disclosure 1, 2, 3, 4, 5 or 6, wherein in the first configuration, at least one or more of the radical scavenger or radical inhibitor is liquid at room temperature. The present disclosure 8 is the pressure-sensitive adhesive tape of the present disclosure 1, wherein in the second configuration, the inorganic filler includes an insulating inorganic filler. The present disclosure 9 is the pressure-sensitive adhesive tape of the present disclosure 1 or 8, wherein in the second configuration, the aspect ratio of the inorganic filler is 20 or more. The present disclosure 10 is the pressure-sensitive adhesive tape of the present disclosure 1, wherein in the third configuration, the metal layer has at least one selected from the group consisting of an aluminum layer and a copper layer, and the thickness of the metal layer is 50 nm or less. The present disclosure 11 is such that the first pressure-sensitive adhesive layer contains a (meth)acrylic acid ester copolymer, the (meth)acrylic acid ester copolymer has a structural unit derived from an alkyl (meth)acrylate, the structural unit derived from the alkyl (meth)acrylate contains a structural unit derived from an alkyl (meth)acrylate in which the alkyl group has 7 or more carbon atoms and the glass transition temperature of the homopolymer is 0°C or lower, and in the (meth)acrylic acid ester copolymer, the content ratio of the structural unit derived from the alkyl (meth)acrylate in which the alkyl group has 7 or more carbon atoms and the glass transition temperature of the homopolymer is 0°C or lower is 70% by mass or more, which is the pressure-sensitive adhesive tape of the present disclosure 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10. The present disclosure 12 is such that the structural unit derived from the alkyl (meth)acrylate contains a structural unit derived from an alkyl (meth)acrylate in which the alkyl group has 12 or more carbon atoms and the glass transition temperature of the homopolymer is 0°C or lower, and in the (meth)acrylic acid ester copolymer, the content ratio of the structural unit derived from the alkyl (meth)acrylate in which the alkyl group has 12 or more carbon atoms and the glass transition temperature of the homopolymer is 0°C or lower is 35% by mass or more, which is the pressure-sensitive adhesive tape of the present disclosure 11. The present disclosure 13 is the pressure-sensitive adhesive tape of the present disclosure 11 or 12, wherein the structural unit derived from the alkyl (meth)acrylate contains a structural unit derived from lauryl (meth)acrylate. The present disclosure 14 is the pressure-sensitive adhesive tape of the present disclosure 11, 12, or 13, wherein the (meth)acrylic acid ester copolymer has a structural unit derived from a polar functional group monomer, and the structural unit derived from the polar functional group monomer contains a structural unit derived from a monomer containing a hydroxyl group. The present disclosure 15 is the pressure-sensitive adhesive tape of the present disclosure 11, 12, 13, or 14, wherein the (meth)acrylic acid ester copolymer has a structural unit derived from a polar functional group monomer, and the structural unit derived from the polar functional group monomer contains a structural unit derived from a monomer containing an amide group. In the first configuration described above, the present disclosure 16 is an adhesive tape of the present disclosure 11, 12, 13, 14, or 15, wherein the content of the radical scavenger or radical inhibitor is 1 part by mass or more with respect to 100 parts by mass of the (meth)acrylate copolymer. In the second configuration described above, the present disclosure 17 is an adhesive tape of the present disclosure 11, 12, 13, 14, 15, or 16, wherein the content of the inorganic filler is 5 parts by mass or more with respect to 100 parts by mass of the (meth)acrylate copolymer. The present disclosure 18 is an adhesive tape of the present disclosure 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, or 17, wherein the thickness of the first adhesive layer is 10 μm or more. The present disclosure 19 is an adhesive tape of the present disclosure 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, or 18, wherein the base material layer includes a heat-resistant base material. The present disclosure 20 is an adhesive tape of the present disclosure 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, or 19, which is used to receive the parts of the semiconductor device in the process of transferring the parts of the semiconductor device. The present disclosure 21 is an adhesive tape of the present disclosure 20, wherein the part of the semiconductor device is a chip. The present invention will be described in detail below. In the first configuration, the second configuration, and the third configuration described above, matters in common will be described without particular designation.

[0009] The inventors of the present invention used an adhesive tape having at least one layer of a base material layer and an adhesive layer on one surface of the base material layer, and examined the composition of the adhesive layer and the configuration of the adhesive tape for a composition and configuration that can suppress peeling of the adhesive layer even when plasma cleaning is performed. Furthermore, as a result of examining the shear storage modulus of the adhesive layer at low temperatures for an adhesive tape having such a composition and configuration, the inventors have found that they can obtain an adhesive tape that is excellent in the component transfer performance of a semiconductor device as a carrier material and can suppress peeling of the adhesive layer even when plasma cleaning is performed, and have thus completed the present invention.

[0010] The adhesive tape of the present invention has at least one layer of a base material layer. By having at least one layer of a base material layer, the adhesive tape of the present invention has an appropriate firmness, is an adhesive tape with excellent handleability, and is a useful adhesive tape as a carrier material that can receive and re-transfer components of a semiconductor device.

[0011] The above base material layer preferably includes a heat-resistant base material. By including a heat-resistant base material in the above base material layer, it becomes easier to prevent the base material from shrinking or melting due to heat and losing its shape even when heat is generated during plasma cleaning. Examples of the above heat-resistant base material include polyester films, special thermoplastic resin films, polyimide films, and the like. Examples of the above polyester film include polyethylene terephthalate (PET) film, polyethylene naphthalate (PEN) film, polybutylene terephthalate (PBT) film, and the like. Examples of the above special thermoplastic resin film include polyether ether ketone (PEEK) film, and the like. Among them, from the viewpoint of the balance between price, excellent permeability, and heat resistance, a polyethylene naphthalate (PEN) film is preferable.

[0012] Also, from the viewpoint of excellent ultraviolet light transmittance, it is preferable that the base material layer contains a (meth)acrylic resin film. Examples of the (meth)acrylic resin film include a polymethyl methacrylate film and the like. In this specification, “(meth)acrylic” means acrylic or methacrylic.

[0013] The thickness of the base material layer is not particularly limited, but the preferable lower limit is 5 μm, and the preferable upper limit is 200 μm. When the thickness of the base material layer is within the above range, it has appropriate firmness and can be made into an adhesive tape with better handleability. The more preferable lower limit of the thickness of the base material layer is 10 μm, and the more preferable upper limit is 188 μm.

[0014] When a component of a semiconductor device such as a chip is transferred to the adhesive tape of the present invention and then re-transferred to a drive circuit board or the like, from the viewpoint of peeling off the component of the semiconductor device such as a chip by transfer by laser ablation or peeling, the preferable lower limit of the ultraviolet light transmittance of the base material layer at a wavelength of 355 nm is 1%, the more preferable lower limit is 50%, and the further preferable lower limit is 80%. There is no particular preferable upper limit for the ultraviolet light transmittance of the base material layer at a wavelength of 355 nm, but substantially about 95% is the upper limit. The ultraviolet light transmittance of the base material layer at a wavelength of 355 nm can be measured in accordance with JIS L1925 using, for example, a spectrophotometer (manufactured by Shimadzu Corporation, “UV-2600i” etc.).

[0015] The adhesive tape of the present invention has a first adhesive layer on one surface of the base material layer. The first adhesive layer is not particularly limited, but is preferably a pressure-sensitive adhesive layer.

[0016] The first adhesive layer preferably contains a base polymer. Examples of the base polymer contained in the first pressure-sensitive adhesive layer include A-B-A type block copolymers, (meth)acrylate copolymers, urethane copolymers, and silicone copolymers. Among them, since the peelability of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is further improved and the adhesive residue on the components of the semiconductor device such as chips can be further suppressed, the first pressure-sensitive adhesive layer preferably contains a (meth)acrylate copolymer.

[0017] The (meth)acrylate copolymer is a copolymer having a structure derived from a (meth)acrylate monomer. The (meth)acrylate copolymer preferably has a structural unit derived from an alkyl (meth)acrylate. In the present specification, “(meth)acrylate” means acrylate or methacrylate.

[0018] The structural unit derived from the alkyl (meth)acrylate preferably contains a structural unit derived from an alkyl (meth)acrylate in which the alkyl group has 7 or more carbon atoms and the glass transition temperature of the homopolymer is 0° C. or lower (hereinafter sometimes simply referred to as “alkyl (meth)acrylate (a)”). When the structural unit derived from the alkyl (meth)acrylate contains the structural unit derived from the alkyl (meth)acrylate (a), it is possible to keep the shear storage modulus in the low temperature range of the first pressure-sensitive adhesive layer lower. As will be described later, when the shear storage modulus in the low temperature range is low, the shear storage modulus in the high frequency (high speed range) also becomes low according to the Arrhenius law (temperature-frequency conversion law). Therefore, even when the components of the semiconductor device fall at high speed during semiconductor device transfer (corresponding to the high speed range), since the first pressure-sensitive adhesive layer remains soft, it becomes easier to catch the components of the semiconductor device, and thus the component transfer performance of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is further improved.

[0019] Examples of the structural unit derived from the above (meth)acrylic acid alkyl ester (a) include a structural unit derived from heptyl (meth)acrylate, a structural unit derived from octyl (meth)acrylate, a structural unit derived from isooctyl (meth)acrylate, a structural unit derived from 2-ethylhexyl (meth)acrylate, a structural unit derived from nonyl (meth)acrylate, a structural unit derived from isononyl (meth)acrylate, a structural unit derived from decyl (meth)acrylate, a structural unit derived from lauryl (meth)acrylate, a structural unit derived from stearyl (meth)acrylate, a structural unit derived from isostearyl (meth)acrylate, a structural unit derived from isobornyl (meth)acrylate, and the like. These structural units derived from the above (meth)acrylic acid alkyl ester (a) may be used alone or in combination of two or more. Among them, since the long chain length of the alkyl group of the (meth)acrylic acid alkyl ester makes it difficult for the (meth)acrylic acid alkyl esters to approach each other and appropriately suppresses the entanglement between the (meth)acrylic acid alkyl esters, even when the gel fraction is increased, the shear storage modulus from low temperature to normal temperature can be kept low. From such a viewpoint, a structural unit derived from an alkyl (meth)acrylate (hereinafter, may be simply referred to as “(meth)acrylic acid alkyl ester (a-1)”) in which the number of carbon atoms of the alkyl group is 12 or more and the glass transition temperature as a homopolymer is 0° C. or lower is preferable, and a structural unit derived from lauryl (meth)acrylate is more preferable.

[0020] In the above (meth)acrylic acid ester copolymer, the preferable lower limit of the content ratio of the structural unit derived from the above (meth)acrylic acid alkyl ester (a) is 70% by mass. When the content ratio of the structural unit derived from the above (meth)acrylic acid alkyl ester (a) is 70% by mass, the component transfer performance of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is further improved. The more preferable lower limit of the content ratio of the structural unit derived from the above (meth)acrylic acid alkyl ester (a) is 75% by mass, and the further preferable lower limit is 80% by mass. In addition, the preferable upper limit of the content ratio of the structural unit derived from the above (meth)acrylic acid alkyl ester (a) is 100% by mass, that is, it may be composed only of the above (meth)acrylic acid alkyl ester (a). Note that the content ratio of the structural unit derived from the above (meth)acrylic acid alkyl ester (a) is the sum of the content ratio of the structural unit derived from the above (meth)acrylic acid alkyl ester (a-1) and the structural unit derived from a (meth)acrylic acid alkyl ester (hereinafter sometimes simply referred to as “(meth)acrylic acid alkyl ester (a-2)”) having 7 or more and less than 12 carbon atoms in the alkyl group and a glass transition temperature of 0° C. or lower when made into a homopolymer.

[0021] In the above (meth)acrylic acid ester copolymer, the preferable lower limit of the content ratio of the structural unit derived from the above (meth)acrylic acid alkyl ester (a-1) is 35% by mass. When the content ratio of the structural unit derived from the above (meth)acrylic acid alkyl ester (a-1) is 35% by mass, the component transfer performance of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is further improved. The more preferable lower limit of the content ratio of the structural unit derived from the above (meth)acrylic acid alkyl ester (a-1) is 38% by mass, and the further preferable lower limit is 40% by mass. Also, from the viewpoint of keeping the shear storage elastic modulus at room temperature moderately high and making it difficult for adhesive residue to remain on the semiconductor device components when re-transferring the semiconductor device components such as chips to the drive circuit board or the like after transferring the semiconductor device components such as chips to the pressure-sensitive adhesive tape, the preferable upper limit of the content ratio of the structural unit derived from the above (meth)acrylic acid alkyl ester (a-1) is 70% by mass, the more preferable upper limit is 65% by mass, and the further preferable upper limit is 60% by mass.

[0022] In the above (meth)acrylic acid ester copolymer, the content ratio of the structural unit derived from the above (meth)acrylic acid alkyl ester (a-2) preferably has a lower limit of 20% by mass. When the content ratio of the structural unit derived from the above (meth)acrylic acid alkyl ester (a-2) is 20% by mass, the component transfer performance of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is further improved. A more preferable lower limit of the content ratio of the structural unit derived from the above (meth)acrylic acid alkyl ester (a-2) is 23% by mass, and a further preferable lower limit is 25% by mass. Also, from the viewpoint of keeping the shear storage modulus at room temperature low and maintaining the adhesive layer soft even when the components of the semiconductor device fall at high speed during semiconductor device transfer, the upper limit of the content ratio of the structural unit derived from the above (meth)acrylic acid alkyl ester (a-2) is preferably 60% by mass, more preferably 58% by mass, and further preferably 55% by mass.

[0023] The structural unit derived from the above (meth)acrylic acid alkyl ester may contain a structural unit derived from a (meth)acrylic acid alkyl ester other than the above (meth)acrylic acid alkyl ester (a) (hereinafter sometimes simply referred to as "(meth)acrylic acid alkyl ester (b)").

[0024] Examples of the structural unit derived from the above (meth)acrylic acid alkyl ester (b) include (meth)acrylic acid alkyl esters having 1 to less than 7 carbon atoms. Specifically, there may be mentioned a structural unit derived from methyl (meth)acrylate, a structural unit derived from ethyl (meth)acrylate, a structural unit derived from propyl (meth)acrylate, a structural unit derived from isopropyl (meth)acrylate, a structural unit derived from n-butyl (meth)acrylate, a structural unit derived from s-butyl (meth)acrylate, a structural unit derived from t-butyl (meth)acrylate, a structural unit derived from isobutyl (meth)acrylate, a structural unit derived from pentyl (meth)acrylate, a structural unit derived from hexyl (meth)acrylate, and the like. Among them, a structural unit derived from a (meth)acrylic acid alkyl ester having 1 to less than 7 carbon atoms and a glass transition temperature of 0°C or lower when made into a homopolymer is preferable. These structural units derived from the above (meth)acrylic acid alkyl ester (b) may be used alone or in combination of two or more.

[0025] The above (meth)acrylic acid ester copolymer preferably has a structural unit derived from a polar functional group monomer. Since the above (meth)acrylic acid ester copolymer has a structural unit derived from the above polar functional group monomer, the cohesive force of the above first pressure-sensitive adhesive layer is further increased, so that the adhesive force of the above first pressure-sensitive adhesive layer is further improved, and the component transfer performance of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is further improved. In addition, the peeling performance of the components of the semiconductor device by transfer by laser ablation or peeling of the pressure-sensitive adhesive tape of the present invention is further improved, and the remaining glue on the components of the semiconductor device can be further suppressed. Further, when the above first pressure-sensitive adhesive layer contains a crosslinking agent described later, the functional group of the structural unit derived from the above polar functional group monomer reacts with the crosslinking agent, and the (meth)acrylic acid ester copolymer forms a crosslinked structure, so that the cohesive force of the above first pressure-sensitive adhesive layer is further increased, and thus the adhesive force of the above first pressure-sensitive adhesive layer is further improved. As a result, the component transfer performance of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is further improved. In addition, the peeling performance of the components of the semiconductor device by transfer by laser ablation or peeling of the pressure-sensitive adhesive tape of the present invention is further improved, and the remaining glue on the components of the semiconductor device can be further suppressed.

[0026] Examples of the structural unit derived from the above polar functional group monomer include a structural unit derived from a carboxy group-containing monomer, a structural unit derived from a hydroxyl group-containing monomer, a structural unit derived from an epoxy group-containing monomer, a structural unit derived from an amino group-containing monomer, a structural unit derived from an amide group-containing monomer, and the like. These structural units derived from polar functional group monomers may be used alone or in combination of two or more. In particular, from the viewpoints that the cohesive force of the first pressure-sensitive adhesive layer is further increased, the adhesive force of the first pressure-sensitive adhesive layer is further improved, the component transfer performance of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is further improved, and the component peeling performance of the semiconductor device by transfer by laser ablation or peeling of the pressure-sensitive adhesive tape of the present invention is further improved, and the adhesive residue on the components of the semiconductor device can be further suppressed, it preferably has a structural unit derived from a hydroxyl group-containing monomer and at least one structural unit selected from the group consisting of amide group-containing monomers.

[0027] Examples of the hydroxyl group-containing monomer include hydroxy (meth) acrylic acid alkyl esters such as 4-hydroxybutyl (meth) acrylate and 2-hydroxyethyl (meth) acrylate. Examples of the amide group-containing monomer include (meth) acrylamide. Examples of the carboxy group-containing monomer include (meth) acrylic acid-based monomers such as (meth) acrylic acid. Examples of the epoxy group-containing monomer include glycidyl (meth) acrylate.

[0028] In the (meth) acrylic acid ester copolymer, the preferable lower limit of the content ratio of the structure derived from the hydroxyl group-containing monomer is 2% by mass. When the content ratio of the structure derived from the hydroxyl group-containing monomer is 2% by mass or more, the cohesive force of the first pressure-sensitive adhesive layer is further increased, the adhesive force of the first pressure-sensitive adhesive layer is further improved, the component transfer performance of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is further improved, and the component peeling performance of the semiconductor device by transfer by laser ablation or peeling of the pressure-sensitive adhesive tape of the present invention is further improved, and the adhesive residue on the components of the semiconductor device can be further suppressed. The more preferable lower limit of the content ratio of the structure derived from the hydroxyl group-containing monomer is 3% by mass, and the further preferable lower limit is 5% by mass. Also, the preferable upper limit of the content ratio of the structure derived from the above hydroxyl group-containing monomer is 10% by mass. When the content ratio of the structure derived from the above hydroxyl group-containing monomer is 10% by mass or less, the above first adhesive layer does not become too hard, and the component transfer performance of the semiconductor device of the adhesive tape of the present invention is further improved. A more preferable upper limit of the adhesive tape of the present invention is 8% by mass, and a further preferable upper limit is 5% by mass.

[0029] In the above (meth)acrylic acid ester copolymer, the preferable lower limit of the total content ratio of the structural units derived from the above polar functional group monomer is 0.1% by mass, and the preferable upper limit is 30% by mass. When the total content ratio of the structures derived from the above polar functional group monomer is within the above range, the cohesive force of the above first adhesive layer is further increased, so that the adhesive force of the above first adhesive layer is further improved, and the component transfer performance of the semiconductor device of the adhesive tape of the present invention is further improved. Also, from the viewpoint of further improving the component peeling performance of the semiconductor device by laser ablation or peeling transfer of the adhesive tape of the present invention, and further suppressing the adhesive residue on the components of the semiconductor device. The more preferable lower limit of the total content ratio of the structural units derived from the above polar functional group monomer is 0.5% by mass, the more preferable upper limit is 25% by mass, the further preferable lower limit is 1% by mass, and the further preferable upper limit is 20% by mass. In addition, when the above (meth)acrylic acid ester copolymer has only one type of structure derived from the above polar functional group monomer, the total content ratio of the structural units derived from the above polar functional group monomer indicates the single content ratio of the structure derived from the above one type of polar functional group monomer.

[0030] The above (meth)acrylic acid ester copolymer may further contain structural units derived from other monomers other than the structural units derived from the above (meth)acrylic acid alkyl ester and the structural units derived from the above polar functional group monomer.

[0031] The preferable lower limit of the weight average molecular weight (Mw) of the above (meth)acrylic acid ester copolymer is 200,000, and the preferable upper limit is 2,000,000. When the weight average molecular weight of the above (meth)acrylic acid ester copolymer is within the above range, the component holding performance of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is improved, and also the component peeling performance of the semiconductor device by transfer by laser ablation or peeling is further improved, and the adhesive residue on the components of the semiconductor device can be further suppressed. The more preferable lower limit of the weight average molecular weight of the above (meth)acrylic acid ester copolymer is 1,000,000, and the more preferable upper limit is 1,800,000. In the present specification, the weight average molecular weight (Mw) is the weight average molecular weight in terms of standard polystyrene by GPC (Gel Permeation Chromatography) measurement.

[0032] The preferable lower limit of the polydispersity (Mw / Mn) of the above (meth)acrylic acid ester copolymer is 2, and the preferable upper limit is 8. When the polydispersity of the above (meth)acrylic acid ester copolymer is within the above range, the component holding performance of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is improved, and also the component peeling performance of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is further improved, and the adhesive residue on the components of the semiconductor device can be further suppressed. The more preferable lower limit of the polydispersity of the above (meth)acrylic acid ester copolymer is 3, and the more preferable upper limit is 5. Note that Mn means the number average molecular weight in terms of standard polystyrene by GPC measurement.

[0033] The measurement of the weight average molecular weight (Mw), number average molecular weight (Mn), and polydispersity (Mw / Mn) of the above (meth)acrylic acid ester copolymer is carried out by the following method. That is, a (meth)acrylic acid ester copolymer is diluted 50-fold with tetrahydrofuran (THF), and the resulting diluted solution is filtered through a filter (material: polytetrafluoroethylene, pore size: 0.2 μm) to prepare a measurement sample. Next, this measurement sample is supplied to a gel permeation chromatograph (for example, manufactured by Waters, "2690 Separations Module", etc.), and GPC measurement is performed under the conditions of a sample flow rate of 1 mL / min and a column temperature of 40°C. The polystyrene-reduced molecular weight of the (meth)acrylic acid ester copolymer is measured to obtain the weight average molecular weight and number average molecular weight of the (meth)acrylic acid ester copolymer, and the polydispersity is calculated. As the column, GPC KF-806L (manufactured by Showa Denko KK) etc. can be used, and as the detector, a differential refractometer can be used.

[0034] The above (meth)acrylic acid ester copolymer can be obtained, for example, by subjecting a monomer mixture as a raw material to a radical reaction in the presence of a polymerization initiator for polymerization. Examples of the above radical reaction method include living radical polymerization, free radical polymerization, etc. According to living radical polymerization, a copolymer having a more uniform molecular weight and composition can be obtained compared to free radical polymerization, and the generation of low molecular weight components etc. can be suppressed. Therefore, the cohesive force of the first pressure-sensitive adhesive layer is further improved, the adhesive force of the first pressure-sensitive adhesive layer is further improved, and the component transfer performance of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is further improved. As a method for polymerizing the above monomer mixture, a conventionally known method can be used, and examples include solution polymerization (boiling point polymerization or isothermal polymerization), UV polymerization, emulsion polymerization, suspension polymerization, bulk polymerization, etc. Among them, solution polymerization and UV polymerization are preferable because the adhesive force of the resulting pressure-sensitive adhesive tape becomes higher. When solution polymerization is used as a method for polymerizing the above monomer mixture, examples of the reaction solvent include ethyl acetate, toluene, methyl ethyl ketone, dimethyl sulfoxide, ethanol, acetone, diethyl ether, etc. These reaction solvents may be used alone or in combination of two or more.

[0035] Examples of the polymerization initiator include organic peroxides, azo compounds, and the like. Examples of the organic peroxide include 1,1-bis(t-hexylperoxy)-3,3,5-trimethylcyclohexane, t-hexyl peroxypivalate, t-butyl peroxypivalate, 2,5-dimethyl-2,5-bis(2-ethylhexanoylperoxy)hexane, t-hexyl peroxy-2-ethylhexanoate, t-butyl peroxy-2-ethylhexanoate, t-butyl peroxyisobutyrate, t-butyl peroxy-3,5,5-trimethylhexanoate, t-butyl peroxylaurate, and the like. Examples of the azo compound include azobisisobutyronitrile, azobiscyclohexanecarbonitrile, and the like. These polymerization initiators may be used alone or in combination of two or more. In addition, when the radical reaction method is the living radical polymerization, examples of the polymerization initiator include organic tellurium polymerization initiators. The organic tellurium polymerization initiator is not particularly limited as long as it is generally used in living radical polymerization, and examples thereof include organic tellurium compounds and organic telluride compounds. In the living radical polymerization, in addition to the organic tellurium polymerization initiator, an azo compound may be used as the polymerization initiator for the purpose of accelerating the polymerization rate.

[0036] In the first pressure-sensitive adhesive layer, the preferable lower limit of the content ratio of the (meth)acrylate copolymer is 60% by mass. When the content ratio of the (meth)acrylate copolymer is 60% by mass or more, the adhesive strength of the first pressure-sensitive adhesive layer is further improved, and the component transfer performance of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is further improved. The more preferable lower limit of the content ratio of the (meth)acrylate copolymer is 62% by mass, and the further preferable lower limit is 65% by mass. In addition, the preferable upper limit of the content ratio of the (meth)acrylate copolymer is 99% by mass.

[0037] It is preferable that the first adhesive layer contains a crosslinking agent. By the first adhesive layer containing a crosslinking agent and forming a structure in which the base polymer is crosslinked, the component transfer performance of the semiconductor device and the component peeling performance of the semiconductor device are further improved.

[0038] As the crosslinking agent, for example, it is selected according to the type of polar functional group contained in the base polymer, and examples thereof include isocyanate-based crosslinking agents, epoxy-based crosslinking agents, metal chelate-based crosslinking agents, and the like. Among them, an isocyanate-based crosslinking agent is preferable because it is easy to adjust the gel fraction and the like of the first adhesive layer described later to a suitable range.

[0039] Examples of the isocyanate-based crosslinking agent include toluene diisocyanate (TDI)-based crosslinking agents and hexamethylene diisocyanate (HDI)-based crosslinking agents. Examples of the epoxy-based crosslinking agent include N,N'-(cyclohexane-1,3-diylbismethylene) bis(diglycidylamine) and N,N,N',N'-tetraglycidyl-1,3-benzenedi(methanamine).

[0040] The content of the crosslinking agent is not particularly limited, and the degree of crosslinking (gel fraction) of the first adhesive layer can be adjusted by adjusting the amount of polar functional groups in the base polymer contained in the first adhesive layer and the content of the crosslinking agent. The preferable lower limit of the content of the crosslinking agent with respect to 100 parts by mass of the base polymer contained in the first pressure-sensitive adhesive layer is 0.01 part by mass, and the preferable upper limit is 15 parts by mass. When the content of the crosslinking agent is within the above range, the base polymer contained in the first pressure-sensitive adhesive layer can be appropriately crosslinked to further enhance the cohesive force of the first pressure-sensitive adhesive layer, the adhesive force of the first pressure-sensitive adhesive layer is further improved, and the component transfer performance of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is further improved. Also, the component peeling performance of the semiconductor device by transfer by laser ablation or peeling of the pressure-sensitive adhesive tape of the present invention is further improved, and the residue of the adhesive on the components of the semiconductor device can be further suppressed. The more preferable lower limit of the content of the crosslinking agent is 0.1 part by mass, the more preferable upper limit is 12 parts by mass, the further preferable lower limit is 0.15 part by mass, and the further preferable upper limit is 8 parts by mass.

[0041] The first pressure-sensitive adhesive layer may contain a tackifier. By the first pressure-sensitive adhesive layer containing a tackifier, the adhesive force of the first pressure-sensitive adhesive layer is improved, and the component transfer performance of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is further improved.

[0042] The tackifier may be a solid tackifier at normal temperature or a liquid tackifier at normal temperature, but it is preferably a liquid tackifier at normal temperature. The compatibility of the tackifier with other components contained in the first pressure-sensitive adhesive layer such as the base polymer is further improved, and the first pressure-sensitive adhesive layer becomes more uniform. Since it is possible to suppress a decrease in the adhesive force of the first pressure-sensitive adhesive layer, the component transfer performance of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is further improved. In the present specification, "normal temperature" means a temperature of 5°C to 35°C.

[0043] The tackifier is not particularly limited, and examples thereof include rosin ester resin, terpene phenol resin, terpene resin, coumarone resin, and the like.

[0044] The content of the above-mentioned tackifier is not particularly limited. However, from the perspective of the component peeling performance of semiconductor devices by laser ablation or transfer by peeling of the pressure-sensitive adhesive tape of the present invention, it is preferably not contained in the first pressure-sensitive adhesive layer. When the tackifier is contained, the preferable upper limit of the content is 40 parts by mass with respect to 100 parts by mass of the base polymer contained in the first pressure-sensitive adhesive layer. When the content of the tackifier is 40 parts by mass or less, after transferring the components of the semiconductor device to the pressure-sensitive adhesive tape of the present invention, when re-transferring the components of the semiconductor device to a drive circuit board or the like by laser ablation or transfer by peeling, the component peeling performance of the semiconductor device by laser ablation or transfer by peeling of the pressure-sensitive adhesive tape of the present invention is further improved. A more preferable upper limit of the content of the tackifier is 30 parts by mass.

[0045] The first pressure-sensitive adhesive layer may contain an ultraviolet absorber. When the pressure-sensitive adhesive layer contains an ultraviolet absorber, heat or vibration is efficiently generated by irradiation with laser light, and deformation due to ablation is likely to occur. Therefore, after transferring the components of the semiconductor device to the pressure-sensitive adhesive tape of the present invention, when re-transferring the components of the semiconductor device to a drive circuit board or the like by laser ablation, the component peeling performance of the semiconductor device by laser ablation of the pressure-sensitive adhesive tape of the present invention is further improved. In addition, since the first pressure-sensitive adhesive layer appropriately absorbs laser light, it is possible to suppress the absorption of light by the components of the semiconductor device being adhered, so that the manufacturing quality of the components of the semiconductor device manufactured using the pressure-sensitive adhesive tape of the present invention is further improved. In addition, when the step of peeling the components of the semiconductor device by laser ablation is not necessary, the first pressure-sensitive adhesive layer does not have to contain an ultraviolet absorber.

[0046] The above ultraviolet absorber may be a solid ultraviolet absorber at normal temperature, but a liquid ultraviolet absorber at normal temperature is preferred. By containing a liquid ultraviolet absorber at normal temperature in the first adhesive layer, the compatibility with other components contained in the first adhesive layer such as the base polymer is further improved, and the first adhesive layer becomes more uniform. As a result, the component transfer performance of the adhesive tape of the present invention for semiconductor devices and the peeling performance of semiconductor devices by laser ablation are further improved.

[0047] Examples of the above ultraviolet absorber include benzotriazole-based ultraviolet absorbers, hydroxyphenyltriazine-based ultraviolet absorbers, etc. Further, for example, ethylhexyl methoxysilicate, octyl methoxysilicate, ethylhexyl paramethoxycinnamate, hexyl diethylaminohydroxybenzoyl benzoate, bis(ethylhexyloxy)phenol methoxyphenyltriazine, t-butylmethoxydibenzoylmethane, etc. may be mentioned. These ultraviolet absorbers may be used alone or in combination of two or more. Among them, from the viewpoint of excellent compatibility with other components in the adhesive layer, benzotriazole-based ultraviolet absorbers and hydroxyphenyltriazine-based ultraviolet absorbers are preferred.

[0048] When the first adhesive layer contains an ultraviolet absorber, the preferable upper limit of the content of the ultraviolet absorber is 15 parts by mass with respect to 100 parts by mass of the (meth)acrylate copolymer. If the content of the ultraviolet absorber is 15 parts by mass or less, it is easily compatible with the (meth)acrylate copolymer and is less likely to precipitate even over time. Also, if the ablation becomes too large, problems such as the peeling of semiconductor device components not being able to be carried out as expected and the adhesion of the adhesive layer components to semiconductor device components may occur. If the content of the ultraviolet absorber is 15 parts by mass or less, the ablation is appropriately maintained, so the peeling performance of the adhesive tape of the present invention for semiconductor devices by laser ablation is further improved. The more preferable upper limit of the content of the ultraviolet absorber is 12 parts by mass, and the further preferable upper limit is 10 parts by mass. Further, when the first adhesive layer contains an ultraviolet absorber and a step of peeling a semiconductor device by laser ablation is required, a preferable lower limit of the content of the ultraviolet absorber is 1 part by mass. When the content of the ultraviolet absorber is 1 part by mass or more, heat or vibration is more efficiently generated in the adhesive layer by irradiation with laser light, and deformation due to ablation is more likely to occur. Therefore, after transferring the components of the semiconductor device to the adhesive tape of the present invention, when re-transferring the components of the semiconductor device to a drive circuit board or the like by laser ablation, the peeling performance of the semiconductor device by laser ablation of the adhesive tape of the present invention is further improved. Further, since the adhesive layer moderately absorbs laser light, absorption of light by the components of the semiconductor device being adhered can be more suppressed, and thus the manufacturing quality of the components of the semiconductor device manufactured using the adhesive tape of the present invention is further improved. A more preferable lower limit of the content of the ultraviolet absorber is 2 parts by mass, and an even more preferable lower limit is 3 parts by mass.

[0049] The first adhesive layer may contain known additives such as a plasticizer, a resin, a surfactant, and a wax. These additives may be used alone or in combination of two or more.

[0050] The upper limit of the shear storage modulus G' at -30°C (hereinafter, may be simply referred to as "the shear storage modulus of the first adhesive layer at -30°C") measured by dynamic viscoelasticity measurement at a frequency of 1 Hz of the first adhesive layer is 350,000 Pa. The reception of chip components by an adhesive tape is usually performed at high speed. When a force is applied at such a high speed, the shear storage modulus G’ is highly correlated with the shear storage modulus G’ at low temperatures based on the temperature-speed conversion rule. Therefore, when the shear storage modulus of the first adhesive layer at -30°C is 350,000 Pa or less, components of a semiconductor device moving at high speed can be received flexibly and can be well attached to the adhesive layer, making the adhesive tape of the present invention excellent in the component transfer performance of a semiconductor device. The preferable upper limit of the shear storage modulus of the first adhesive layer at -30°C is 250,000 Pa, and the more preferable upper limit is 200,000 Pa. Also, the preferable lower limit of the shear storage modulus of the first adhesive layer at -30°C is 80,000 Pa. When the shear storage modulus of the first adhesive layer at -30°C is 80,000 Pa or more, the first adhesive layer does not become too soft, making the adhesive tape of the present invention excellent in the component transfer performance of a semiconductor device. The more preferable lower limit of the shear storage modulus of the first adhesive layer at -30°C is 100,000 Pa. Note that the shear storage modulus of the first adhesive layer at -30°C can be measured by dynamic viscoelasticity measurement. Specifically, a measurement sample consisting only of the first adhesive layer is prepared. For the prepared measurement sample, a dynamic viscoelasticity measurement device such as a viscoelastic spectrometer (manufactured by IT Measurement & Control Co., Ltd., "DVA-200", etc.) is used, and under the conditions of shear mode, a temperature increase rate of 5°C / min, a measurement frequency of 1 Hz, and a strain of 0.10%, the dynamic viscoelasticity spectrum from -50°C to 200°C is measured, etc., to obtain the shear storage modulus of the first adhesive layer at -30°C. In addition, a measurement sample consisting only of the first adhesive layer in the measurement of the shear storage modulus of the first adhesive layer at -30°C is prepared by removing the base material layer from the adhesive tape and separating only the first adhesive layer. As a method for removing the base material layer, as long as it avoids treatment using a solvent, treatment involving a chemical reaction, treatment at a high temperature, etc. to avoid denaturation of the adhesive layer, it is not particularly limited. As a specific method, after laminating the first adhesive layers together, an appropriate temperature and peeling rate are selected, and the base material layer and the first adhesive layer are peeled off by peeling, and the base material layer is removed, or a method of physically grinding the base material layer can be selected. Further, a sheet having a thickness of about 0.5 mm consisting only of the separately prepared first adhesive layer may be used as the measurement sample.

[0051] As a method for adjusting the shear storage modulus of the first adhesive layer at -30°C within the above range, for example, a method of adjusting the composition or weight average molecular weight (Mw) of the base polymer contained in the first adhesive layer, the type or amount of the cross-linking agent as described above, etc. can be mentioned.

[0052] The preferable lower limit of the gel fraction of the first adhesive layer is 75% by mass, and the preferable upper limit is 99% by mass. If the gel fraction of the first adhesive layer is 75% by mass or more, the cohesive force of the first adhesive layer can be further increased, and after transferring the components of the semiconductor device to the adhesive tape of the present invention, when re-transferring the components of the semiconductor device to a drive circuit board or the like, the peeling performance is further improved. If the gel fraction of the first adhesive layer is 99% by mass or less, the first adhesive layer does not become too hard, and the adhesive tape of the present invention has more excellent component transfer performance for semiconductor devices. The more preferable lower limit of the gel fraction of the first adhesive layer is 78% by mass, and the more preferable upper limit is 98% by mass. Incidentally, the gel fraction of the first adhesive layer can be measured by the following methods or the like. First, cut the adhesive tape into an appropriate size, such as 20 mm × 30 mm. Take out only the first adhesive layer W0(g) from the cut adhesive tape, immerse it in 50 mL of ethyl acetate, and shake it in a shaker at a temperature of 23 °C and 200 rpm for 24 hours. After shaking, use a metal mesh (aperture #200 mesh, W1(g)) to separate the ethyl acetate and the first adhesive layer that has absorbed and swollen with ethyl acetate. Dry the separated first adhesive layer under the condition of 110 °C for 1 hour. Measure the mass W2(g) of the first adhesive layer including the metal mesh after drying, and calculate the gel fraction of the first adhesive layer using the following formula. Gel fraction (mass%) = 100×(W2 - W1) / W0 (W0: mass of the initial first adhesive layer, W1: initial mass of the metal mesh, W2: mass of the first adhesive layer including the metal mesh after drying) However, when the first adhesive layer cannot be completely dissolved in ethyl acetate, solvents such as toluene, hexane, or water are used instead of ethyl acetate. Specifically, when the first adhesive layer contains, for example, a styrene-based elastomer, toluene or hexane is used, and when it contains polyvinyl alcohol, hot water at 90 °C is used. Also, when the first adhesive layer alone cannot be successfully taken out from the adhesive tape, first measure the mass of only the base material layer of a predetermined size (e.g., 20 mm × 30 mm) in advance, and calculate the mass W0(g) of only the adhesive layer by subtracting only the mass of the base material layer from the mass of the adhesive tape. Then, using the adhesive tape of a predetermined size as it is, after performing the immersion and shaking operations, subtract the mass of only the base material layer from the total mass of the first adhesive layer including the metal mesh and the base material layer after drying to calculate the mass W2(g).

[0053] As a method for adjusting the gel fraction of the first adhesive layer within the above range, for example, methods such as adjusting the composition or weight average molecular weight (Mw) of the base polymer contained in the first adhesive layer, or the type or amount of the cross-linking agent as described above can be mentioned.

[0054] The preferred lower limit of the thickness of the first adhesive layer is 10 μm. If the thickness of the first adhesive layer is 10 μm or more, the component transfer performance of the adhesive tape for semiconductor devices will be further improved. The more preferred lower limit of the thickness of the first adhesive layer is 15 μm, and the further preferred lower limit is 20 μm. Also, the preferred upper limit of the thickness of the first adhesive layer is 150 μm. If the thickness of the first adhesive layer is 150 μm or less, the glue residue on the components of the semiconductor device can be further suppressed. Since the component transfer performance of the adhesive tape for semiconductor devices and the component peeling performance of the semiconductor device by transfer by laser ablation or peeling are further improved, and the glue residue on the components of the semiconductor device can be further suppressed, the more preferred upper limit of the thickness of the first adhesive layer is 120 μm, and the further preferred upper limit is 100 μm.

[0055] The adhesive tape of the present invention only needs to have the base material layer and the first adhesive layer as described above, but may further have other layers as long as the effects of the present invention are not impaired.

[0056] The adhesive tape of the present invention satisfies at least one configuration selected from the group consisting of the following first configuration, the following second configuration, and the following third configuration. First configuration: The first adhesive layer contains a radical scavenger or a radical inhibitor Second configuration: The first adhesive layer contains an inorganic filler Third configuration: The adhesive tape has the base material layer, the first adhesive layer, a metal layer, and a second adhesive layer in this order By satisfying at least one configuration selected from the group consisting of the following first configuration, the following second configuration, and the following third configuration, the adhesive tape of the present invention can suppress the peeling of the adhesive layer even when plasma cleaning is performed. Among them, from the viewpoint that the adhesive tape of the present invention has high adhesiveness and the component transfer performance of the semiconductor device as a carrier material is more excellent, it is preferable to satisfy the first configuration.

[0057] In the above first configuration, the first adhesive layer contains a radical scavenger or a radical inhibitor. By the first adhesive layer containing a radical scavenger or a radical inhibitor, the radical scavenger can trap oxygen radicals generated during plasma cleaning, or the generation of oxygen radicals during plasma cleaning can be suppressed by the radical inhibitor, so that the decomposition of the first adhesive layer can be suppressed.

[0058] The radical scavenger or radical inhibitor preferably includes at least one radical scavenger or radical inhibitor selected from the group consisting of a phenolic radical scavenger or a phenolic radical inhibitor, a phosphite-based radical scavenger or a phosphite-based radical inhibitor, and a hindered amine-based radical scavenger or a hindered amine-based radical inhibitor. By the radical scavenger or radical inhibitor including at least one radical scavenger or radical inhibitor selected from the group consisting of a phenolic radical scavenger or a phenolic radical inhibitor, a phosphite-based radical scavenger or a phosphite-based radical inhibitor, and a hindered amine-based radical scavenger or a hindered amine-based radical inhibitor, oxygen radicals generated during plasma cleaning can be trapped more efficiently, and the generation of oxygen radicals can be suppressed, so that the decomposition of the first adhesive layer can be further suppressed.

[0059] Examples of the phenolic radical scavenger or phenolic radical inhibitor include a reshindered phenolic radical scavenger or a reshindered phenolic radical inhibitor, and a hindered phenolic radical scavenger or a hindered phenolic radical inhibitor. Among them, from the viewpoint of having less steric hindrance and being able to trap oxygen radicals generated during plasma cleaning more efficiently, the phenolic radical scavenger or phenolic radical inhibitor preferably includes a reshindered phenolic radical scavenger or a reshindered phenolic radical inhibitor. Examples of the above-mentioned res hindered phenolic radical scavengers or res hindered phenolic radical inhibitors include, for example, Adeka Stab AO-30 (manufactured by ADEKA, powdery at normal temperature), AO-40 (manufactured by ADEKA, powdery at normal temperature), etc. Examples of the above-mentioned hindered phenolic radical scavengers or hindered phenolic radical inhibitors include, for example, Rianox 1076 (manufactured by Ryonon, liquid at normal temperature), AO-20 (manufactured by ADEKA), AO-50 (manufactured by ADEKA, powdery at normal temperature), AO-60 (manufactured by ADEKA, powdery at normal temperature), etc.

[0060] Examples of the above-mentioned phosphite radical scavengers or phosphite radical inhibitors include, for example, Adeka Stab 1500 (manufactured by ADEKA, liquid at normal temperature), Adeka Stab PEP-36 (manufactured by ADEKA, powdery at normal temperature), etc.

[0061] The above radical scavenger or radical inhibitor preferably contains the above phenolic radical scavenger or phenolic radical inhibitor and the above phosphite radical scavenger or phosphite radical inhibitor. By containing the above phenolic radical scavenger or phenolic radical inhibitor and the above phosphite radical scavenger or phosphite radical inhibitor, the above radical scavenger can more efficiently reduce the amount of radicals generated, so that the adhesive is less likely to be decomposed even when plasma treatment is performed.

[0062] The above-mentioned hindered amine radical scavenger or hindered amine radical inhibitor may contain a compound having at least one selected from the group consisting of an N-H group, an N-CH3 group, and an N-O-R (where R represents a linear or branched alkyl group). Among them, from the viewpoint of relatively low basicity and more efficient trapping of oxygen radicals generated during plasma cleaning, the above-mentioned hindered amine radical scavenger or hindered amine radical inhibitor preferably contains a compound having at least one selected from the group consisting of an N-CH3 group and an N-O-R structure.

[0063] In the structure represented by the above N-O-R, R represents a linear or branched alkyl group. Specifically, it represents an alkyl group having 1 to 20 carbon atoms. Among them, from the viewpoint of compatibility, a linear alkyl group is preferred, and an alkyl group having 5 to 15 carbon atoms is preferred. In addition, in the case of a compound having a plurality of the structures represented by the above N-O-R, the Rs in the N-O-R may be different from each other.

[0064] Examples of the above-mentioned hindered amine radical scavenger or hindered amine radical inhibitor having an N-CH3 group include Adeka Stab LA-63P (powder at room temperature, manufactured by ADEKA), Adeka Stab LA-72 (liquid at room temperature) (manufactured by ADEKA), Adeka Stab LA-52 (manufactured by ADEKA), Adeka Stab LA-82 (liquid at room temperature, manufactured by ADEKA), and the like. Examples of the above-mentioned hindered amine radical scavenger or hindered amine radical inhibitor having a structure represented by N-O-R include Adeka Stab LA-81 (liquid at room temperature, manufactured by ADEKA), Tinuvin 123 (liquid at room temperature, manufactured by BASF), and the like.

[0065] It is preferable that at least one of the radical scavengers or radical inhibitors is liquid at room temperature. When at least one of the radical scavengers or radical inhibitors is liquid at room temperature, the compatibility of the radical scavenger or radical inhibitor with other components contained in the first pressure-sensitive adhesive layer such as the base polymer is further improved, and the first pressure-sensitive adhesive layer becomes more uniform. As a result, oxygen radicals generated during plasma cleaning can be trapped more efficiently, decomposition of the first pressure-sensitive adhesive layer can be further suppressed, and furthermore, it is possible to suppress a decrease in the adhesive strength of the first pressure-sensitive adhesive layer. Therefore, the component transfer performance of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is further improved.

[0066] With respect to 100 parts by mass of the (meth)acrylic acid ester copolymer, the preferable lower limit of the content of the radical scavenger or radical inhibitor is 1 part by mass. When the content of the radical scavenger or radical inhibitor is 1 part by mass or more, oxygen radicals generated during plasma cleaning can be trapped more efficiently, so that decomposition of the first pressure-sensitive adhesive layer can be further suppressed. Also, the preferable upper limit of the content of the radical scavenger or radical inhibitor is 5 parts by mass. When the content of the radical scavenger or radical inhibitor is 5 parts by mass or less, it is possible to suppress the deposition of the radical scavenger or radical inhibitor on the first pressure-sensitive adhesive layer and to suppress a decrease in the adhesive strength of the first pressure-sensitive adhesive layer. Therefore, the component transfer performance of the semiconductor device of the pressure-sensitive adhesive tape of the present invention is further improved.

[0067] In the second configuration, the first pressure-sensitive adhesive layer contains an inorganic filler. When the first pressure-sensitive adhesive layer contains an inorganic filler, during plasma cleaning, the inorganic filler blocks the plasma, so that the amount of plasma irradiated onto the base polymer in the first pressure-sensitive adhesive layer is reduced, and thus it is possible to suppress chipping of the first pressure-sensitive adhesive layer.

[0068] Examples of the inorganic filler include an insulating inorganic filler, a conductive inorganic filler, and the like. Among these, from the viewpoint of being able to suppress the charging of the inorganic filler and improve the quality of the components of the semiconductor device to be manufactured, the inorganic filler preferably includes an insulating inorganic filler.

[0069] The inorganic filler is preferably non-spherical. When the inorganic filler is non-spherical, when the inorganic filler is exposed on the surface of the adhesive layer, it is easy to efficiently coat the surface. Therefore, when performing plasma cleaning, the amount of plasma irradiated on the base polymer in the first adhesive layer is less, so it is possible to further suppress the peeling of the first adhesive layer.

[0070] When the inorganic filler is non-spherical, the preferable lower limit of the aspect ratio of the inorganic filler is 20. When the aspect ratio of the inorganic filler is 20 or more, the amount of plasma irradiated on the base polymer in the first adhesive layer is less when performing plasma cleaning, so it is possible to further suppress the peeling of the first adhesive layer. The more preferable lower limit of the aspect ratio of the inorganic filler is 25, and the further preferable lower limit is 30. Also, there is no particular upper limit for the aspect ratio of the inorganic filler, but about 300 is the substantial upper limit. In the present specification, the "aspect ratio of the inorganic filler" is a value represented by (average particle major axis diameter of the inorganic filler) / (average particle minor axis diameter of the inorganic filler).

[0071] The preferable lower limit of the average particle diameter of the above inorganic filler is 1 μm, and the preferable upper limit is 30 μm. When the average particle diameter of the above inorganic filler is 1 μm or more, the amount of plasma irradiated to the base polymer in the above first adhesive layer is less when performing plasma cleaning, so that it becomes possible to further suppress the peeling of the first adhesive layer. When the average particle diameter of the above inorganic filler is 30 μm or less, the adhesive performance of the adhesive is not deteriorated, so that the component transfer performance of the semiconductor device of the adhesive tape of the present invention is further improved. The more preferable lower limit of the average particle diameter of the above inorganic filler is 3 μm, the more preferable upper limit is 25 μm, the further preferable lower limit is 5 μm, and the further preferable upper limit is 20 μm. When the inorganic filler is non-spherical, the average particle diameter of the inorganic filler indicates the average major axis length of the inorganic filler.

[0072] The preferable upper limit of the average particle thickness of the above inorganic filler is 150 nm. When the average particle thickness of the above inorganic filler is 150 nm, the compatibility of the above inorganic filler is further improved, and the decrease in the adhesive strength of the above first adhesive layer can be further suppressed. The more preferable upper limit of the average particle thickness of the above inorganic filler is 100 nm. Also, the thinner the average particle thickness of the above inorganic filler, the more preferable, but substantially 50 nm is the limit.

[0073] Examples of the above insulating inorganic filler include mica, silica, and the like. Examples of non-spherical mica include MK-300 (manufactured by Katakura Koppu Agri Co., Ltd., aspect ratio: 300), MK-100J (manufactured by Katakura Koppu Agri Co., Ltd., aspect ratio: 20), and the like. Examples of spherical silica filler include NT-10 (manufactured by Tokuyama Corporation).

[0074] Examples of the above conductive inorganic filler include metal fillers such as nickel fillers. Examples of non-spherical nickel filler include Ni255 (manufactured by Indofil Limited, aspect ratio: 10), and the like.

[0075] With respect to 100 parts by mass of the above (meth)acrylic acid ester copolymer, the preferable lower limit of the content of the above inorganic filler is 5 parts by mass. When the content of the above inorganic filler is 5 parts by mass or more, when plasma cleaning is performed, the amount of plasma irradiated to the base polymer in the above first adhesive layer becomes less, so that it is possible to further suppress the peeling of the first adhesive layer. A more preferable lower limit of the content of the above inorganic filler is 8 parts by mass, and a further preferable lower limit is 10 parts by mass. Also, the preferable upper limit of the content of the above inorganic filler is 50 parts by mass. When the content of the above inorganic filler is 50 parts by mass or less, the adhesive strength of the first adhesive layer is improved, and the component transfer performance of the semiconductor device of the adhesive tape of the present invention is further improved. A more preferable upper limit of the content of the above inorganic filler is 45 parts by mass, and a further preferable upper limit is 40 parts by mass.

[0076] In the above third configuration, the adhesive tape of the present invention has the above base material layer, the above first adhesive layer, a metal layer, and a second adhesive layer in this order. Since the adhesive tape of the present invention has the above base material layer, the above first adhesive layer, a metal layer, and a second adhesive layer in this order, the metal layer can block the plasma during plasma cleaning, so that it is possible to suppress the peeling of the adhesive layer.

[0077] The above metal layer may be a single layer or a multilayer. Further, the above metal layer may be further laminated to another film, vapor-deposited, or sputter-treated.

[0078] The above metal layer is preferably composed of at least one selected from the group consisting of aluminum (AL) and copper. When the above metal layer is composed of aluminum and copper, a balance can be achieved between the ease of thinning the metal layer and the manufacturing cost. In the present specification, "the metal layer is composed of at least one selected from the group consisting of aluminum and copper" may mean that the metal layer contains at least one selected from the group consisting of aluminum and copper foil as one component, or may mean that the metal layer has at least one selected from the group consisting of an aluminum layer composed of aluminum alone and a copper layer composed of copper alone. Among these, from the viewpoint of ease of thinning, it is preferable that the above metal layer has at least one selected from the group consisting of an aluminum layer and a copper layer. Examples of the above aluminum layer include aluminum foils manufactured by Oike Advanced Film Co., Ltd.

[0079] The thickness of the above metal layer preferably has an upper limit of 50 nm. When the thickness of the above metal layer is 50 nm or less, when the parts of the semiconductor device are received by the above second adhesive layer, through the softness of the above first adhesive layer having a low shear storage modulus at low temperature or normal temperature, the cushioning property of the above second adhesive layer can be improved, so that it is possible to suppress a reduction in the component transfer performance of the semiconductor device of the adhesive tape of the present invention. Further, the preferable lower limit of the thickness of the above metal layer is 1 nm. The more preferable upper limit of the thickness of the above metal layer is 20 nm, the further preferable upper limit is 15 nm, and the even more preferable upper limit is 10 nm. Also, the preferable lower limit of the thickness of the above metal layer is 1 nm. Since the plasma during plasma cleaning can be more blocked when the thickness of the above metal layer is 1 nm or more, it is possible to more suppress the wear of the adhesive layer. The more preferable lower limit of the thickness of the above metal layer is 2 nm, and the further preferable lower limit is 3 nm.

[0080] The above second adhesive layer is preferably the same as the above-described first adhesive layer. Since the above second adhesive layer is the same as the above first adhesive layer, the adhesive tape of the present invention becomes more excellent in the component transfer performance of the semiconductor device.

[0081] From the viewpoint of preventing the components of the semiconductor device from falling due to shaving of the second adhesive layer that occurs during plasma cleaning, it is desirable that the second adhesive layer has a small thickness. Specifically, the preferable upper limit of the thickness of the second adhesive layer is 10 μm. When the thickness of the second adhesive layer is 10 μm or less, it becomes possible to more effectively prevent the components of the semiconductor device from falling due to shaving of the second adhesive layer that occurs during plasma cleaning. A more preferable upper limit of the thickness of the second adhesive layer is 9 μm, and an even more preferable upper limit is 8 μm. Also, preferably, the thickness of the second adhesive layer is smaller than the thickness of the first adhesive layer. Since the thickness of the second adhesive layer is smaller than the thickness of the first adhesive layer, shaving of the second adhesive layer that occurs during plasma cleaning can be minimized, thereby preventing the chip from falling. In addition, since the thickness of the first adhesive layer is larger than the thickness of the second adhesive layer, it becomes easier to gently receive the components of the semiconductor device.

[0082] The method for manufacturing the adhesive tape of the present invention is not particularly limited. However, when the adhesive tape of the present invention satisfies the above-described first configuration and the second configuration, for example, after adding the (meth)acrylic acid ester copolymer, a radical scavenger or a radical inhibitor, an inorganic filler, and other additives as required and stirring to obtain a first adhesive solution, the first adhesive solution is applied onto the release-treated surface of a release PET (polyethylene terephthalate) film, dried, and then laminated to a base material layer, whereby the adhesive tape can be obtained. Also, when the pressure-sensitive adhesive tape of the present invention satisfies the above-described third configuration, for example, after adding the above (meth)acrylic acid ester copolymer and other necessary additives and stirring to obtain a first pressure-sensitive adhesive solution, the first pressure-sensitive adhesive solution is applied to the base material layer and dried to produce a laminated film (a) having the first pressure-sensitive adhesive layer. Next, the pressure-sensitive adhesive layer surface of (a) is bonded to one surface of the metal layer. Next, in the same manner as the first pressure-sensitive adhesive solution, after obtaining a second pressure-sensitive adhesive solution, the second pressure-sensitive adhesive solution is applied to the release-treated surface of the release PET (polyethylene terephthalate) film and dried to produce a laminated film (b) having the second pressure-sensitive adhesive layer. Further, by overlapping the pressure-sensitive adhesive layer of the laminated film (b) on the surface of the metal layer to which the laminated film (a) is bonded on one side and which is not bonded with the laminated film (a), a laminate in which the release PET (polyethylene terephthalate) film, the second pressure-sensitive adhesive layer, the metal layer, the first pressure-sensitive adhesive layer, and the base material layer are arranged in this order is produced, and then cured at 40°C for 48 hours, whereby a pressure-sensitive adhesive tape satisfying the above-described third configuration can be manufactured.

[0083] The pressure-sensitive adhesive tape of the present invention may further have a third pressure-sensitive adhesive layer on the other surface of the base material layer that does not have the first pressure-sensitive adhesive layer. Since the pressure-sensitive adhesive tape of the present invention can have a third pressure-sensitive adhesive layer, the pressure-sensitive adhesive tape of the present invention can be directly attached to a support or the like, so that the working efficiency in manufacturing a semiconductor device or the like is further improved. The third pressure-sensitive adhesive layer is not particularly limited, and a conventionally known pressure-sensitive adhesive layer can be used.

[0084] The preferred lower limit of the total thickness of the layers of the pressure-sensitive adhesive tape of the present invention excluding the third pressure-sensitive adhesive layer (hereinafter, may be simply referred to as "the thickness of the pressure-sensitive adhesive tape") is 20 μm, and the preferred upper limit is 300 μm. When the thickness of the pressure-sensitive adhesive tape of the present invention is within the above range, the pressure-sensitive adhesive tape of the present invention can achieve both the function of receiving components of a semiconductor device (component transfer performance of the semiconductor device) and the function of re-transferring the received components of the semiconductor device onto a drive circuit board or the like (component peeling performance of the semiconductor device). The more preferred lower limit of the thickness of the pressure-sensitive adhesive tape of the present invention is 30 μm, the more preferred upper limit is 150 μm, the further preferred lower limit is 40 μm, and the further preferred upper limit is 130 μm.

[0085] The use of the pressure-sensitive adhesive tape of the present invention is not particularly limited. However, since the pressure-sensitive adhesive tape of the present invention has excellent component transfer performance of a semiconductor device, it can be suitably used for receiving the components of the semiconductor device in the process of transferring the components of the semiconductor device. Among them, when transferring the components of a semiconductor device arranged in a laminate for transfer, it can be more suitably used as a carrier material for attaching the components of the semiconductor device to be transferred to the pressure-sensitive adhesive layer for reception and transporting them to another place. When the pressure-sensitive adhesive tape of the present invention is used as a carrier material, the components of the semiconductor device held on the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape of the present invention are re-transferred from the pressure-sensitive adhesive tape of the present invention onto a drive circuit board or the like. Furthermore, since the pressure-sensitive adhesive tape of the present invention can suppress the peeling of the pressure-sensitive adhesive layer even when plasma cleaning is performed, even when plasma cleaning is performed to remove the residue on the components of the semiconductor device held on the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape of the present invention, it is easy to prevent the components of the semiconductor device from falling, and thus it becomes possible to easily perform re-transfer from the carrier material to a drive circuit board or the like.

[0086] As a method of transferring components of a semiconductor device onto the adhesive tape of the present invention, for example, methods such as irradiating with laser light can be mentioned. Further, as a method of re-transferring components of a semiconductor device from the adhesive tape of the present invention onto another carrier material or a drive circuit board, for example, a method of directly bringing the chip into close contact with the laminate at the transfer destination and directly peeling it off using the difference in peeling force, or a method such as irradiating with laser light can be mentioned. The components of the semiconductor device are not particularly limited, but chips are preferred. Specific examples of the chips include, for example, MiniLED chips, microLED chips, optical chips of image sensors, etc. Among them, from the viewpoint of high demand for mass production, MiniLED chips and microLED chips are preferred.

Effects of the Invention

[0087] According to the present invention, it is possible to provide an adhesive tape that is excellent in the component transfer performance of a semiconductor device as a carrier material and can suppress the shaving of the adhesive layer even when plasma cleaning is performed.

Modes for Carrying Out the Invention

[0088] Examples will be given below to explain the aspects of the present invention in more detail, but the present invention is not limited only to these examples.

[0089] (Preparation of (meth)acrylate copolymers A to E) 52 parts by mass of ethyl acetate and a mixture of the constitutional unit monomers shown in Table 1 were placed in a reactor equipped with a thermometer, a stirrer, and a condenser tube. After nitrogen substitution, the reactor was installed in a water bath set at 60°C, and the reactor was heated to start reflux. 0.05 part by mass of azobisisobutyronitrile was added as a polymerization initiator 30 minutes after the start of reflux, and a polymerization reaction was carried out for 5 hours. By cooling while adding ethyl acetate to the reactor for dilution, a solution containing (meth)acrylate copolymer bodies A to E was obtained. For the obtained methacrylic acid ester copolymers A to E, the weight average molecular weight was measured by the GPC method. As the measuring instrument, "2690 Separations Module" manufactured by Waters was used, as the column, "GPC KF-806L" manufactured by Showa Denko was used, ethyl acetate was used as the solvent, and the measurement was carried out under the conditions of a sample flow rate of 1 mL / min and a column temperature of 40°C.

[0090] Note that the constituent unit monomers shown in Table 1 are as follows. · BA: n-butyl acrylate · 2-EHA: 2-ethylhexyl acrylate · LA: lauryl acrylate · 2-HEA: 2-hydroxyethyl acrylate · 4-HBA: 4-hydroxybutyl acrylate · AAc: acrylic acid · AAm: acrylamide

[0091]

Table 1

[0092] (Preparation of adhesive solutions of adhesives a to x) The acrylic copolymers shown in Tables 2 to 3 were dissolved in ethyl acetate so that the solid content became 20% by mass. After adding the respective components shown in Tables 2 to 3 to 100 parts by mass of the acrylic copolymer and stirring well, adhesive solutions of adhesives a to x were prepared.

[0093]

Table 2

[0094]

Table 3

[0095] (Examples 1 to 22, Comparative Examples 1 to 4) (Manufacture of adhesive tape) The pressure-sensitive adhesive solution of the first pressure-sensitive adhesive layer shown in Tables 4 to 6 was applied onto the release-treated surface of a release PET (polyethylene terephthalate) film using an applicator so that the dry film had the thickness shown in Tables 4 to 6, dried at 110°C for 3 minutes, and then laminated onto the film used as the base material layer shown in Tables 4 to 6. Subsequently, by curing at 40°C for 48 hours, a pressure-sensitive adhesive tape having a base material layer and a first pressure-sensitive adhesive layer on one surface of the base material layer was obtained.

[0096] (Measurement of the shear storage modulus of the first pressure-sensitive adhesive layer at -30°C) The pressure-sensitive adhesive solution of the first pressure-sensitive adhesive layer shown in Tables 4 to 6 was applied onto the release-treated surface of a release PET (polyethylene terephthalate) film using an applicator so that the dry film had a thickness of 75 μm, and the first pressure-sensitive adhesive layer was obtained by drying at 110°C for 3 minutes. The obtained first pressure-sensitive adhesive layers were stacked to prepare a sample with a thickness of 500 μm (width 6 mm × length 10 mm). For the obtained sample, using a dynamic viscoelasticity measuring device ("Rheometrics Dynamic Analyze RDA-700" manufactured by Rheometrics), under a nitrogen atmosphere, the dynamic viscoelasticity was measured under the conditions of a measurement temperature of -40 to 150°C, a heating rate of 5°C / min, a shear mode, and a frequency of 1 Hz, and the shear storage modulus (Pa) of the first pressure-sensitive adhesive layer at -30°C was measured. The results are shown in Tables 4 to 6. Note that the release PET film is not included in the sample.

[0097] (Measurement of the gel fraction of the first pressure-sensitive adhesive layer) Only the first pressure-sensitive adhesive layer was taken out from the obtained pressure-sensitive adhesive tape as W0 (g), immersed in 50 mL of ethyl acetate respectively, and shaken at a temperature of 23°C and 200 rpm for 24 hours using a shaker. After shaking, using a metal mesh (mesh opening #200 mesh, W1 (g)), the ethyl acetate and the first pressure-sensitive adhesive layer that had absorbed and swelled with ethyl acetate were separated respectively. The separated first pressure-sensitive adhesive layer was dried at 110°C for 1 hour. The mass W2 (g) of the first pressure-sensitive adhesive layer including the metal mesh after drying was measured respectively, and the gel fraction (mass %) of the first pressure-sensitive adhesive layer was calculated using the following formula. The results are shown in Tables 4 to 6. Gel fraction (mass %) = 100×(W2 - W1) / W0 (W0: Mass of the initial first adhesive layer, W1: Initial mass of the metal mesh, W2: Mass of the first adhesive layer containing the dried metal mesh)

[0098] (Examples 23 - 25) (Manufacture of the adhesive tape) The adhesive solution of the first adhesive layer shown in Table 5 was applied onto the film used as the base material layer shown in Table 5 using an applicator so that the dry film had the thickness shown in Table 5, and dried at 110°C for 3 minutes to form the first adhesive layer, which was designated as laminated film (a). Next, the adhesive layer surface of laminated film (a) was bonded to one surface of the metal layer shown in Table 5. Next, the adhesive solution of the second adhesive layer shown in Table 5 was applied onto the release-treated surface of a release PET film with a thickness of 75 μm, and dried at 110°C for 3 minutes to form the second adhesive layer, which was designated as laminated film (b). Further, the adhesive layer of laminated film (b) was overlaid on the other surface of the metal layer to which laminated film (a) was bonded on one surface, and cured at 40°C for 48 hours to obtain an adhesive tape having, in order, a base material layer, a first adhesive layer, a metal layer, and a second adhesive layer.

[0099] (Measurement of the shear storage modulus of the first adhesive layer at -30°C) The adhesive solution of the first adhesive layer shown in Table 5 was applied onto the release-treated surface of a release PET (polyethylene terephthalate) film using an applicator so that the dry film thickness would be 75 μm, and dried at 110°C for 3 minutes to obtain the first adhesive layer. The obtained first adhesive layers were stacked to fabricate a sample with a thickness of 500 μm (width 6 mm × length 10 mm). For the obtained sample, using a dynamic viscoelasticity measuring device ("Rheometrics Dynamic Analyze RDA-700" manufactured by Rheometrics), dynamic viscoelasticity measurement was performed under a nitrogen atmosphere, at a measurement temperature of -40 to 150°C, a heating rate of 5°C / min, in shear mode, and at a frequency of 1 Hz, to measure the shear storage modulus (Pa) of the first adhesive layer at -30°C. The results are shown in Table 5. Note that the release PET film is not included in the sample.

[0100] (Measurement of the gel fraction of the first adhesive layer) After peeling off the base material layer from the obtained adhesive tape, only the first adhesive layer was taken out as W0 (g), immersed in 50 mL of ethyl acetate respectively, and shaken at a temperature of 23°C and 200 rpm for 24 hours using a shaker. After shaking, using a metal mesh (mesh size #200 mesh, W1 (g)), the ethyl acetate and the first adhesive layer swollen by absorbing ethyl acetate were separated respectively. The separated first adhesive layer was dried at 110°C for 1 hour. The mass W2 (g) of the first adhesive layer including the metal mesh after drying was measured respectively, and the gel fraction (mass %) of the first adhesive layer was calculated using the following formula. The results are shown in Table 5. Gel fraction (mass %) = 100×(W2 - W1) / W0 (W0: Mass of the initial first adhesive layer, W1: Initial mass of the metal mesh, W2: Mass of the first adhesive layer including the metal mesh after drying)

[0101] (Measurement of the shear storage modulus of the second adhesive layer at -30°C) The release PET film of the obtained adhesive tape was peeled off, and after bonding the second adhesive layers together, the second adhesive layer was repeatedly peeled off from the metal layer to produce a sample (width 6 mm × length 10 mm) with a thickness of 500 μm obtained by stacking the second adhesive layers. For the obtained sample, using a dynamic viscoelasticity measuring device ("Rheometrics Dynamic Analyze RDA-700" manufactured by Rheometrics), under a nitrogen atmosphere, at a measurement temperature of -40 to 150 °C, a heating rate of 5 °C / min, in shear mode, and at a frequency of 1 Hz, dynamic viscoelasticity measurement was performed to measure the shear storage modulus (Pa) of the second adhesive layer at -30 °C. The results are shown in Table 5.

[0102] (Measurement of the gel fraction of the second adhesive layer) By peeling off the second adhesive layer of the obtained adhesive tape from the metal layer, only the second adhesive layer was taken out from the adhesive tape as W0 (g), and each was immersed in 50 mL of ethyl acetate, and shaken at a temperature of 23 °C and 200 rpm for 24 hours using a shaker. After shaking, using a metal mesh (aperture #200 mesh, W1 (g)), the ethyl acetate and the first adhesive layer that had absorbed and swollen with ethyl acetate were separated respectively. The separated first adhesive layer was dried at 110 °C for 1 hour. The mass W2 (g) of the first adhesive layer including the metal mesh after drying was measured respectively, and the gel fraction (mass %) of the first adhesive layer was calculated using the following formula. The results are shown in Table 5. Gel fraction (mass %) = 100 × (W2 - W1) / W0 (W0: Mass of the initial second adhesive layer, W1: Initial mass of the metal mesh, W2: Mass of the second adhesive layer including the metal mesh after drying)

[0103] The adhesive tapes obtained in the examples and comparative examples were evaluated by the following methods. The results are shown in Tables 4 to 6.

[0104] (Component transfer performance of semiconductor devices) Separately from the obtained adhesive tape, a test single-sided adhesive tape was prepared. The test single-sided adhesive tape was bonded to the surface of the Si chip side of a wafer on which 10 Si chips (500 μm × 500 μm square, 50 μm thick) were arranged. Then, by peeling the wafer, the Si chips were placed on the test single-sided adhesive tape. The test single-sided adhesive tape on which the Si chips were placed was opposed to the adhesive tape obtained in the example or comparative example, and using a semiconductor solid laser, laser light with a wavelength of 365 nm, an output of 4 W, and a frequency of 4 kHz was irradiated from the base material side of the test single-sided adhesive tape to each Si chip to peel the Si chips and transfer them onto the adhesive tape. When the adhesive tape received the Si chips, the case where 10 Si chips adhered to the adhesive tape was marked as "◎", the case where 8 - 9 Si chips adhered was marked as "〇", the case where 7 Si chips adhered was marked as "△", and the case where the number of adhered Si chips was 6 or less was marked as "×", and the component transfer performance of the adhesive tape for semiconductor devices was evaluated.

[0105] (Etching by plasma) In the above-mentioned "(component transfer performance of semiconductor devices)", for the Si chips and the adhesive tape on which the Si chips were transferred, using a plasma irradiation device (manufactured by Samco, "parallel plate type RIE device RIE - 10NR"), the conditions were as follows: used gas: O2 gas, gas flow rate 45 sccm, Power 200 W, pressure 250 mTorr, irradiation time 90 minutes, and irradiation was performed. The surface of the outermost adhesive layer of the adhesive tape after irradiation with O2 plasma was observed using a digital microscope (manufactured by Keyence, "VHX - 6000") to confirm the depth of etching by plasma. The case where the depth of etching was 20 μm or less was marked as "◎◎", the case where the depth of etching was deeper than 20 μm and 25 μm or less was marked as "◎", the case where the depth of etching was deeper than 25 μm and 35 μm or less was marked as "○", the case where the depth of etching was deeper than 35 μm and 60 μm or less was marked as "△", and the case where the depth of etching was deeper than 60 μm was marked as "×", and the etching by plasma was evaluated.

[0106] (Heat resistance) The pressure-sensitive adhesive tape obtained was placed on a hot plate heated to 200°C such that the base material layer was in contact with the hot plate, and heated for 5 minutes. After the heated pressure-sensitive adhesive tape was air-cooled, the state of the tape surface was visually observed. When there was no foaming on the pressure-sensitive adhesive tape surface or wrinkle formation due to shrinkage of the base material, it was marked as "○", and when there was foaming on the pressure-sensitive adhesive tape surface or wrinkle formation due to shrinkage of the base material, it was marked as "×", and the heat resistance of the pressure-sensitive adhesive tape was evaluated. Even if the evaluation is "×", the pressure-sensitive adhesive tape of the present invention can be used without problems depending on the application.

[0107] Details of the base material layer and the metal layer used in Tables 4 to 6 are shown below. · PET-containing base material: Taiko polyester film FE2002#23 (manufactured by Futamura Chemical Co., Ltd.) · PEN-containing base material: Teonex Q83CU (manufactured by Toyobo Co., Ltd.) · Al foil: Aluminum foil (manufactured by Oike Advanced Film Co., Ltd.)

[0108]

Table 4

[0109]

Table 5

[0110]

Table 6

Industrial Applicability

[0111] According to the present invention, it is possible to provide a pressure-sensitive adhesive tape that is excellent in the component transfer performance of a semiconductor device as a carrier material and can suppress peeling of the adhesive layer even when plasma cleaning is performed.

Claims

1. An adhesive tape having at least one layer of a base material layer and a first adhesive layer on one surface of the base material layer, wherein the first adhesive layer has a shear storage modulus G' at -30°C measured by dynamic viscoelasticity measurement at a frequency of 1 Hz of 350,000 Pa or less, and satisfies at least one configuration selected from the group consisting of the following first configuration, the following second configuration, and the following third configuration The adhesive tape is characterized by this. First configuration: The first adhesive layer contains a radical scavenger or a radical inhibitor Second configuration: The first adhesive layer contains an inorganic filler Third configuration: The adhesive tape has the base material layer, the first adhesive layer, a metal layer, and a second adhesive layer in this order

2. The adhesive tape according to claim 1, which satisfies the first configuration.

3. In the first configuration, the radical scavenger or radical inhibitor includes at least one radical scavenger or radical inhibitor selected from the group consisting of a phenolic radical scavenger or a phenolic radical inhibitor, a phosphite-based radical scavenger or a phosphite-based radical inhibitor, and a hindered amine-based radical scavenger or a hindered amine-based radical inhibitor. The adhesive tape according to claim 1 or 2.

4. The adhesive tape according to claim 3, wherein the radical scavenger or radical inhibitor includes the phenolic radical scavenger or phenolic radical inhibitor and the phosphite-based radical scavenger or phosphite-based radical inhibitor.

5. The adhesive tape according to claim 3, wherein the phenolic radical scavenger or phenolic radical inhibitor includes a res hindered phenolic radical scavenger or a res hindered phenolic radical inhibitor.

6. The hindered amine radical scavenger or hindered amine radical inhibitor is a compound having at least one selected from the group consisting of an N-H group, an N-CH ３ group, and an N-O-R (wherein R represents a linear or branched alkyl group). The pressure-sensitive adhesive tape according to claim 3, which contains the compound.

7. In the first configuration, the adhesive tape according to claim 1 or 2, wherein at least one or more of the radical scavengers or radical inhibitors are liquid at room temperature.

8. The adhesive tape according to claim 1, wherein in the second configuration, the inorganic filler includes an insulating inorganic filler.

9. The adhesive tape according to claim 1 or 8, wherein in the second configuration, the aspect ratio of the inorganic filler is 20 or more.

10. In the third configuration, the metal layer has at least one selected from the group consisting of an aluminum layer and a copper layer, The thickness of the metal layer is 50 nm or less. The pressure-sensitive adhesive tape according to claim 1.

11. The first pressure-sensitive adhesive layer contains a (meth)acrylate copolymer. The (meth)acrylate copolymer has a structural unit derived from an alkyl (meth)acrylate. The structural unit derived from the alkyl (meth)acrylate includes a structural unit derived from an alkyl (meth)acrylate in which the alkyl group has 7 or more carbon atoms and the glass transition temperature of the homopolymer is 0°C or lower. In the (meth)acrylate copolymer, the content ratio of the structural unit derived from the alkyl (meth)acrylate in which the alkyl group has 7 or more carbon atoms and the glass transition temperature of the homopolymer is 0°C or lower is 70% by mass or more. The pressure-sensitive adhesive tape according to claim 1 or 2.

12. The structural unit derived from the alkyl (meth)acrylate includes a structural unit derived from an alkyl (meth)acrylate in which the alkyl group has 12 or more carbon atoms and the glass transition temperature of the homopolymer is 0°C or lower. In the (meth)acrylate copolymer, the content ratio of the structural unit derived from the alkyl (meth)acrylate in which the alkyl group has 12 or more carbon atoms and the glass transition temperature of the homopolymer is 0°C or lower is 35% by mass or more. The pressure-sensitive adhesive tape according to claim 11.

13. The pressure-sensitive adhesive tape according to claim 12, wherein the structural unit derived from the alkyl (meth)acrylate includes a structural unit derived from lauryl (meth)acrylate.

14. The (meth)acrylate copolymer has a structural unit derived from a polar functional group monomer. The structural unit derived from the polar functional group monomer includes a structural unit derived from a monomer containing a hydroxyl group. The pressure-sensitive adhesive tape according to claim 11.

15. The (meth)acrylate copolymer has a structural unit derived from a polar functional group monomer. The structural unit derived from the polar functional group monomer includes a structural unit derived from a monomer containing an amide group. The pressure-sensitive adhesive tape according to claim 11.

16. In the first configuration, the content of the radical scavenger or radical inhibitor is 1 part by mass or more with respect to 100 parts by mass of the (meth)acrylate copolymer. The pressure-sensitive adhesive tape according to claim 11.

17. The pressure-sensitive adhesive tape according to claim 11, wherein in the second configuration, the content of the inorganic filler is 5 parts by mass or more with respect to 100 parts by mass of the (meth)acrylic acid ester copolymer.

18. The pressure-sensitive adhesive tape according to claim 1 or 2, wherein the thickness of the first pressure-sensitive adhesive layer is 10 μm or more.

19. The pressure-sensitive adhesive tape according to claim 1 or 2, wherein the base material layer includes a heat-resistant base material.

20. The pressure-sensitive adhesive tape according to claim 1 or 2, which is used for receiving a component of the semiconductor device in a step of transferring the component of the semiconductor device.

21. The pressure-sensitive adhesive tape according to claim 20, wherein the component of the semiconductor device is a chip.

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