Semiconductor laser device

Abstract

To reduce an effect of an inverse electromotive voltage due to an inductance of a semiconductor laser device imposed on a control voltage of a switching element.SOLUTION: A semiconductor laser device 1A includes: a substrate 50 having a first surface; a first semiconductor laser element 10 mounted on the first surface; a switching element 20 which is mounted on the first surface and controls the current flowing through the first semiconductor laser element 10; and a first capacitor 30 mounted on the first surface. The first semiconductor laser element 10 is connected in series with the switching element 20, and the first capacitor 30 is connected in parallel with the first semiconductor laser element 10 and the switching element 20. When viewed from a first direction parallel to the first surface, the first semiconductor laser element 10 overlaps the switching element 20. When viewed from a second direction parallel to the first surface and orthogonal to the first direction, the first capacitor 30 overlaps at least one of the first semiconductor laser element 10 and the switching element 20.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a semiconductor laser device.

Background Art

[0002] As three-dimensional distance measurement used in vehicles and the like, there is known a technique of emitting laser light to a measurement object and measuring the distance to the measurement object based on the reflected light reflected by the measurement object. As a laser distance measurement device to which this technique is applied, a system using LiDAR (Light Detection and Ranging, Laser Imaging Detection and Ranging) has been proposed (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

[0004] [Summary] By the way, a semiconductor laser device used as a light source of LiDAR includes a laser diode and a transistor connected in series to the laser diode, and emits laser light with a pulse width of several tens of ns or less by switching the on / off of the transistor. When the pulse width is several tens of ns or less, the rate of change of the current flowing through the laser diode increases, and the back electromotive voltage caused by the inductance in the semiconductor laser device may increase. And the back electromotive voltage may affect the gate voltage of the transistor. Note that such a problem is not limited to the transistor, and similarly, when another switching element is used, the back electromotive voltage caused by the inductance may affect the control voltage applied to the control electrode of the switching element.

[0005] An object of the present disclosure is to provide a semiconductor laser device capable of reducing the influence of the back electromotive voltage caused by the inductance on the control voltage of the switching element. A semiconductor laser device according to one aspect of the present disclosure includes a substrate having a first surface, a first semiconductor laser element mounted on the first surface, a switching element mounted on the first surface and controlling a current flowing through the first semiconductor laser element, and a first capacitor mounted on the first surface. The first semiconductor laser element is connected in series with the switching element, and the first capacitor is connected in parallel with the first semiconductor laser element and the switching element. When viewed from a first direction parallel to the first surface, the first semiconductor laser element overlaps the switching element, and when viewed from a second direction parallel to the first surface and orthogonal to the first direction, the first capacitor overlaps at least one of the first semiconductor laser element and the switching element.

Brief Description of the Drawings

[0006]

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[0007] [Detailed Description] Hereinafter, embodiments of the semiconductor laser device will be described with reference to the drawings. The following embodiments illustrate configurations and methods for embodying the technical idea, and do not limit the materials, shapes, structures, arrangements, dimensions, etc. of each component to those described below. The following embodiments can be variously modified.

[0008] [First Embodiment] With reference to FIGS. 1 to 16, a semiconductor laser device according to the first embodiment will be described. (Circuit Configuration of Semiconductor Laser Device and Laser System) As shown in FIG. 1, a semiconductor laser device 1A constituted by the portion surrounded by the broken line in FIG. 1 is used as a pulsed laser light source of a LiDAR which is an example of three-dimensional distance measurement. FIG. 1 shows a configuration in which the semiconductor laser device 1A is used in a laser system 100 as a LiDAR. The semiconductor laser device 1A includes a semiconductor laser element 10, a switching element 20, a capacitor 30, and a plurality of terminals 40. In FIG. 1, the semiconductor laser device 1A includes five terminals 40. Note that the semiconductor laser device 1A may be used in a laser system for two-dimensional distance measurement. Also, the number of terminals 40 can be arbitrarily changed.

[0009] The laser system 100 includes a power supply 110, a current limiting resistor 120, a diode 130, and a driver circuit 140. The power supply 110 is a power supply having a positive electrode 111 and a negative electrode 112, and supplies power to the semiconductor laser element 10. The current limiting resistor 120 is provided between the positive electrode 111 of the power supply 110 and the semiconductor laser element 10, and limits the current flowing from the power supply 110 to the semiconductor laser element 10. The diode 130 has an anode electrode 131 and a cathode electrode 132, and is connected in anti-parallel with the semiconductor laser element 10 to prevent a reverse current from flowing into the semiconductor laser element 10. In the laser system 100 of FIG. 1, a Schottky barrier diode is used as the diode 130. The driver circuit 140 has an output electrode 141 and an input electrode 142, and outputs a control signal for controlling the on / off of the switching element 20 to the switching element 20.

[0010] The semiconductor laser element 10 is a light source of the semiconductor laser device 1A, and for example, a pulsed laser diode is used. As the material of the semiconductor laser element 10, for example, GaAs (gallium arsenide) is used. The semiconductor laser element 10 includes an anode electrode 11 and a cathode electrode 12. The switching element 20 is an element for turning on and off the current to the semiconductor laser element 10. The semiconductor laser element 10 is, for example, of a specification with an oscillation wavelength of 905 nm, an optical output of 75 W or more, and a pulse width of several tens of ns or less. Preferably, the semiconductor laser element 10 is of a specification with an optical output of 150 W or more and a pulse width of 10 ns or less. More preferably, the semiconductor laser element 10 is of a specification with a pulse width of 5 ns or less.

[0011] As the switching element 20, for example, a transistor made of Si (silicon), SiC (silicon carbide), GaN (gallium nitride), or the like is used. When the switching element 20 is made of GaN or SiC, it is suitable for speeding up the switching. In the present embodiment, as the switching element 20, an N-type MOSFET (Metal-Oxide-Semiconductor Field-Effect-Transistor) made of Si is used. The switching element 20 includes a drain electrode 21 which is an example of a first drive electrode, a source electrode 22 which is an example of a second drive electrode, and a gate electrode 23 which is an example of a control electrode.

[0012] The capacitor 30 constitutes a capacitor bank for temporarily storing the charge that should become the current flowing through the semiconductor laser element 10. The capacitor 30 stores electricity, for example, when the switching element 20 is in the off state, and discharges to the semiconductor laser element 10 when the switching element 20 is in the on state. The number of capacitors 30 may be one or more. For example, the capacitance and number of the capacitors 30 are set according to the output of the semiconductor laser element 10. The capacitor 30 has a first terminal 31 and a second terminal 32.

[0013] As shown in FIG. 1, the semiconductor laser element 10 and the switching element 20 are connected in series. Specifically, the cathode electrode 12 of the semiconductor laser element 10 and the drain electrode 21 of the switching element 20 are electrically connected. The anode electrode 11 of the semiconductor laser element 10 is electrically connected to the first power supply terminal 41. The source electrode 22 of the switching element 20 is electrically connected to the second power supply terminal 42. The anode electrode 131 of the diode 130 is electrically connected to the node N between the cathode electrode 12 of the semiconductor laser element 10 and the drain electrode 21 of the switching element 20.

[0014] The capacitor 30 is connected in parallel with the semiconductor laser element 10 and the switching element 20. Specifically, the first terminal 31 of the capacitor 30 is electrically connected to the source electrode 22 of the switching element 20, and the second terminal 32 of the capacitor 30 is electrically connected to the anode electrode 11 of the semiconductor laser element 10.

[0015] The plurality of terminals 40 includes a first power supply terminal 41, a second power supply terminal 42, a control terminal 43, a diode connection terminal 44, and a driver connection terminal 45. As shown in FIG. 1, the first power supply terminal 41 is electrically connected to the positive electrode 111 of the power supply 110 and the cathode electrode 132 of the diode 130. Also, the first power supply terminal 41 is electrically connected to the anode electrode 11 of the semiconductor laser element 10 and the second terminal 32 of the capacitor 30. The second power supply terminal 42 is electrically connected to the negative electrode 112 of the power supply 110. Also, the second power supply terminal 42 is electrically connected to the source electrode 22 of the switching element 20 and the first terminal 31 of the capacitor 30. The control terminal 43 is connected to the output electrode 141 of the driver circuit 140. The diode connection terminal 44 is connected to the anode electrode 131 of the diode 130. Also, the diode connection terminal 44 is connected to the node N between the cathode electrode 12 of the semiconductor laser element 10 and the drain electrode 21 of the switching element 20. Therefore, the anode electrode 131 of the diode 130 and the cathode electrode 12 of the semiconductor laser element 10 are electrically connected via the diode connection terminal 44. The driver connection terminal 45 is electrically connected to the input electrode 142 of the driver circuit 140.

[0016] In the laser system 100 configured as described above, it operates as follows. That is, when the switching element 20 is turned off by the control signal of the driver circuit 140, the capacitor 30 is charged by the power supply 110. Then, when the switching element 20 is turned on by the control signal of the driver circuit 140, the capacitor 30 discharges, causing a current to flow through the semiconductor laser element 10. As a result, the semiconductor laser element 10 outputs pulsed laser light.

[0017] (Configuration of Semiconductor Laser Device) The semiconductor laser device 1A is modularized. That is, the semiconductor laser device 1A has a configuration in which the semiconductor laser element 10, the switching element 20, and the capacitor 30 are housed in one package. Hereinafter, the detailed configuration of such a semiconductor laser device 1A will be described.

[0018] The semiconductor laser device 1A includes a support substrate 50 that supports a semiconductor laser element 10, a switching element 20, and a capacitor 30 and forms part of the package, and a sealing member 90 that seals the semiconductor laser element 10, the switching element 20, and the capacitor 30 and forms part of the package. In this embodiment, the package of the semiconductor laser device 1A is constituted by the support substrate 50 and the sealing member 90. Further, the semiconductor laser device 1A has two capacitors 30A and 30B as the capacitor 30.

[0019] The support substrate 50 forms the conductive paths of the semiconductor laser element 10, the switching element 20, and the capacitor 30 (30A, 30B) and supports the semiconductor laser element 10, the switching element 20, and the capacitor 30. The support substrate 50 has a base material 51 and a conductive portion 60.

[0020] The base material 51 is made of a material having electrical insulation properties. In one example, the base material 51 is made of an epoxy resin or ceramics. In this embodiment, a glass epoxy resin is used as the material constituting the base material 51. The base material 51 has a base material main surface 51a, a base material back surface 51b, a first base material side surface 51c, a second base material side surface 51d, a third base material side surface 51e, and a fourth base material side surface 51f. In the following description, the thickness direction of the base material 51 is defined as the "thickness direction Z", and the directions orthogonal to each other in the direction orthogonal to the thickness direction Z are defined as the "lateral direction X" and the "longitudinal direction Y". Note that the longitudinal direction Y corresponds to the first direction, and the lateral direction X corresponds to the second direction.

[0021] The front main surface 51a and the back main surface 51b of the base material are surfaces facing opposite sides in the thickness direction Z. The first base material side surface 51c, the second base material side surface 51d, the third base material side surface 51e, and the fourth base material side surface 51f are respectively provided between the front main surface 51a and the back main surface 51b of the base material in the thickness direction Z, and are surfaces extending in a direction intersecting with the front main surface 51a and the back main surface 51b. The first base material side surface 51c and the second base material side surface 51d face opposite sides to each other, and the third base material side surface 51e and the fourth base material side surface 51f face opposite sides to each other. In the present embodiment, the first base material side surface 51c and the second base material side surface 51d face opposite sides to each other in the vertical direction Y and extend along the horizontal direction X. The third base material side surface 51e and the fourth base material side surface 51f face opposite sides to each other in the horizontal direction X and extend along the vertical direction Y.

[0022] In a plan view of the base material 51 of the semiconductor laser device 1A (hereinafter simply referred to as "plan view"), the shape of the base material 51 is rectangular. In the present embodiment, in the plan view, the shape of the base material 51 is a rectangular shape in which the first base material side surfaces 51c and 51d are in the long side direction and the third base material side surfaces 51e and 51f are in the short side direction.

[0023] The conductive portion 60 is provided on the base material 51 and constitutes a conductive path to the semiconductor laser element 10, the switching element 20, and the capacitor 30. The material of the conductive portion 60 is not particularly limited, but for example, metals such as Cu (copper), Ni (nickel), Ti (titanium), and Au (gold) are used. Further, the formation method of the conductive portion 60 is not particularly limited, but for example, it is formed by plating. The conductive portion 60 has a front surface side conductive portion 60A as a driving conductive portion, a back surface side conductive portion 60B as a terminal conductive portion, and a connecting portion 60C.

[0024] The front surface side conductive portion 60A is formed on the front main surface 51a of the base material 51. The front surface side conductive portion 60A has a pair of first driving conductive portions 61A, 61B, a second driving conductive portion 62, a third driving conductive portion 63, a pair of fourth driving conductive portions 64A, 64B, and a control conductive portion 65.

[0025] A pair of first drive conductive parts 61A and 61B are arranged at both ends in the lateral direction X and the central part in the longitudinal direction Y on the main surface 51a of the base material. The first drive conductive part 61A is arranged at a position closer to the third base material side surface 51e on the main surface 51a of the base material with a space in the lateral direction X from the third base material side surface 51e in a plan view. The first drive conductive part 61B is arranged at a position closer to the fourth base material side surface 51f on the main surface 51a of the base material with a space in the lateral direction X from the fourth base material side surface 51f in a plan view. The shapes of the first drive conductive parts 61A and 61B in a plan view are rectangular with the longitudinal direction Y as the long side direction and the lateral direction X as the short side direction. In this embodiment, the shapes of the first drive conductive parts 61A and 61B in a plan view are the same as each other. Note that the shapes of the first drive conductive parts 61A and 61B in a plan view can be arbitrarily changed respectively. For example, the shape of the first drive conductive part 61A in a plan view may be different from the shape of the first drive conductive part 61B in a plan view.

[0026] The third drive conductive part 63 is arranged in the part between the pair of first drive conductive parts 61A and 61B in the lateral direction X on the main surface 51a of the base material. The shape of the third drive conductive part 63 in a plan view is convex. The third drive conductive part 63 can be divided into a switching element mounting part 63a which is the part sandwiched between the pair of first drive conductive parts 61A and 61B, and a semiconductor laser element mounting part 63b which protrudes in the longitudinal direction Y from the switching element mounting part 63a.

[0027] The switching element mounting portion 63a is arranged in a portion of the main surface 51a of the base material closer to the second base material side surface 51d in the vertical direction Y. The switching element mounting portion 63a is arranged at a distance from the pair of first driving conductive portions 61A and 61B in the horizontal direction X. The shape of the switching element mounting portion 63a in plan view is square. The size of the switching element mounting portion 63a in the horizontal direction X is larger than the size of each of the pair of first driving conductive portions 61A and 61B in the horizontal direction X. The size of the switching element mounting portion 63a in the vertical direction Y is not particularly limited, but in this embodiment, it is equal to the size of each of the pair of first driving conductive portions 61A and 61B in the vertical direction Y. Here, if the difference between the size of the switching element mounting portion 63a in the vertical direction Y and the size of the pair of first driving conductive portions 61A and 61B in the vertical direction Y is within 5% of the size of the pair of first driving conductive portions 61A and 61B in the vertical direction Y, it can be said that the size of the switching element mounting portion 63a in the vertical direction Y is equal to the size of the pair of first driving conductive portions 61A and 61B in the vertical direction Y.

[0028] The switching element 20 is mounted on the switching element mounting portion 63a. As shown in FIGS. 2 and 4, the switching element 20 is formed in a flat plate shape. The switching element 20 has an element main body 24 made of a semiconductor material such as Si or SiC. The element main body 24 has an element main surface 24a and an element back surface 24b facing opposite sides in the thickness direction Z. The element main surface 24a is a surface facing the same side as the laser element main surface 10a of the semiconductor laser element 10. The element back surface 24b is a surface facing the same side as the laser element back surface 10b.

[0029] A source electrode 22 and a gate electrode 23 are formed on the element main surface 24a. The source electrode 22 is formed over most of the element main surface 24a. The shape of the source electrode 22 in plan view is a concave shape that opens toward the second base material side surface 51d. In this embodiment, the source electrode 22 has a concave portion 22a that is recessed in the vertical direction Y in plan view. The concave portion 22a is formed at an end of the source electrode 22 closer to the second base material side surface 51d and at the central portion in the horizontal direction X. The gate electrode 23 is formed in the concave portion 22a.

[0030] On the inner surface 24b of the element, a drain electrode 21 is formed. The drain electrode 21 is formed, for example, over the entire inner surface 24b of the element. Thus, the switching element 20 of the present embodiment is a transistor having a so-called vertical structure.

[0031] The semiconductor laser element mounting portion 63b is disposed at an end of the switching element mounting portion 63a closer to the first base material side surface 51c in the vertical direction Y and at the center of the switching element mounting portion 63a in the horizontal direction X. The shape of the semiconductor laser element mounting portion 63b in plan view is a rectangular shape in which the vertical direction Y is the long side direction and the horizontal direction X is the short side direction. The size of the semiconductor laser element mounting portion 63b in the horizontal direction X is smaller than the size of the switching element mounting portion 63a in the horizontal direction X. Also, the size of the semiconductor laser element mounting portion 63b in the horizontal direction X is smaller than the size of the pair of first driving conductive portions 61A and 61B in the horizontal direction X. The size of the semiconductor laser element mounting portion 63b in the vertical direction Y is smaller than the size of the switching element mounting portion 63a in the vertical direction Y. Also, the size of the semiconductor laser element mounting portion 63b in the vertical direction Y is smaller than the size of the pair of first driving conductive portions 61A and 61B in the vertical direction Y.

[0032] A semiconductor laser element 10 is mounted on the semiconductor laser element mounting portion 63b. As shown in FIGS. 2 and 4, the semiconductor laser element 10 is formed in a flat plate shape. The shape of the semiconductor laser element 10 in plan view is a rectangular shape in which the vertical direction Y is the long side direction and the horizontal direction X is the short side direction. The semiconductor laser element 10 has a laser element main surface 10a and a laser element back surface 10b that face opposite sides in the thickness direction Z. In the present embodiment, an anode electrode 11 is formed on the laser element main surface 10a, and a cathode electrode 12 is formed on the laser element back surface 10b.

[0033] Note that the shape of the switching element mounting portion 63a in a plan view can be arbitrarily changed. For example, the shape of the switching element mounting portion 63a in a plan view may be a rectangular shape in which one of the lateral direction X and the longitudinal direction Y is the long side direction and the other of the lateral direction X and the longitudinal direction Y is the short side direction. Also, the shape of the semiconductor laser element mounting portion 63b in a plan view can be arbitrarily changed. For example, the shape of the semiconductor laser element mounting portion 63b in a plan view may be a square, or may be a rectangular shape in which the lateral direction X is the long side direction and the longitudinal direction Y is the short side direction.

[0034] The pair of fourth driving conductive portions 64A and 64B are respectively arranged at the ends of the base material main surface 51a in the longitudinal direction Y closer to the first base material side surface 51c. The pair of fourth driving conductive portions 64A and 64B are arranged at a distance from the first base material side surface 51c in the longitudinal direction Y. The fourth driving conductive portion 64A is arranged at the end of the base material main surface 51a closer to the third base material side surface 51e. The fourth driving conductive portion 64A is arranged at a distance from the third base material side surface 51e in the lateral direction X. The fourth driving conductive portion 64B is arranged at the end of the base material main surface 51a closer to the fourth base material side surface 51f. The fourth driving conductive portion 64B is arranged at a distance from the fourth base material side surface 51f in the lateral direction X. The pair of fourth driving conductive portions 64A and 64B are arranged at intervals in the lateral direction X on both sides of the semiconductor laser element mounting portion 63b with respect to the semiconductor laser element mounting portion 63b. When viewed from the longitudinal direction Y, the fourth driving conductive portion 64A is arranged so as to overlap with the first driving conductive portion 61A. Also, when viewed from the longitudinal direction Y, the end of the fourth driving conductive portion 64A closer to the semiconductor laser element mounting portion 63b is arranged so as to overlap with the end of the switching element mounting portion 63a closer to the third base material side surface 51e. When viewed from the longitudinal direction Y, the fourth driving conductive portion 64B is arranged so as to overlap with the first driving conductive portion 61B. Also, when viewed from the longitudinal direction Y, the end of the fourth driving conductive portion 64B closer to the semiconductor laser element mounting portion 63b is arranged so as to overlap with the end of the switching element mounting portion 63a closer to the fourth base material side surface 51f. When viewed from the lateral direction X, the pair of fourth driving conductive portions 64A and 64B are arranged so as to overlap with the semiconductor laser element mounting portion 63b.

[0035] In plan view, the shapes of the pair of fourth driving conductive parts 64A and 64B are rectangular with the lateral direction X being the long side direction and the longitudinal direction Y being the short side direction. The size of the pair of fourth driving conductive parts 64A and 64B in the lateral direction X is larger than the size of the pair of first driving conductive parts 61A and 61B in the lateral direction X. The size of the pair of fourth driving conductive parts 64A and 64B in the longitudinal direction Y is smaller than the size of the pair of first driving conductive parts 61A and 61B in the longitudinal direction Y. Also, the size of the pair of fourth driving conductive parts 64A and 64B in the longitudinal direction Y is smaller than the size of the semiconductor laser element mounting part 63b in the longitudinal direction Y. In the present embodiment, the shapes of the fourth driving conductive parts 64A and 64B in plan view are the same as each other. Note that the shapes of the fourth driving conductive parts 64A and 64B in plan view can be arbitrarily changed respectively. For example, the shape of the fourth driving conductive part 64A in plan view may be different from the shape of the fourth driving conductive part 64B in plan view.

[0036] The second driving conductive part 62 and the control conductive part 65 are respectively arranged at the end portions of the base material main surface 51a closer to the second base material side surface 51d in the longitudinal direction Y. The second driving conductive part 62 and the control conductive part 65 are arranged along the lateral direction X in a state of being separated from each other in the lateral direction X. The second driving conductive part 62 and the control conductive part 65 are respectively arranged at a distance from the second base material side surface 51d in the longitudinal direction Y. The second driving conductive part 62 is arranged at the end portion of the base material main surface 51a closer to the fourth base material side surface 51f in the lateral direction X. The second driving conductive part 62 is arranged at a distance from the fourth base material side surface 51f in the lateral direction X. The control conductive part 65 is arranged at the end portion of the base material main surface 51a closer to the third base material side surface 51e in the lateral direction X. The control conductive part 65 is arranged at a distance from the third base material side surface 51e in the lateral direction X.

[0037] In plan view, the shape of the second driving conductive part 62 is a rectangular shape in which the lateral direction X is the long side direction and the longitudinal direction Y is the short side direction. The size of the second driving conductive part 62 in the longitudinal direction Y is smaller than the size of the pair of first driving conductive parts 61A and 61B and the size of the switching element mounting part 63a in the longitudinal direction Y. The size of the second driving conductive part 62 in the lateral direction X is larger than the size of the pair of first driving conductive parts 61A and 61B in the lateral direction X. The size of the second driving conductive part 62 in the lateral direction X is larger than the size of the pair of fourth driving conductive parts 64A and 64B in the lateral direction X. Note that the shape of the second driving conductive part 62 in plan view can be arbitrarily changed. In one example, the shape of the second driving conductive part 62 in plan view may be a square, or may be a rectangular shape in which the longitudinal direction Y is the long side direction and the lateral direction X is the short side direction.

[0038] In plan view, the shape of the control conductive part 65 is a rectangular shape in which the lateral direction X is the long side direction and the longitudinal direction Y is the short side direction. The size of the control conductive part 65 in the longitudinal direction Y is smaller than the size of the pair of first driving conductive parts 61A and 61B in the longitudinal direction Y. The size of the control conductive part 65 in the lateral direction X is larger than the size of the pair of first driving conductive parts 61A and 61B in the lateral direction X. The size of the control conductive part 65 in the lateral direction X is larger than the size of the pair of fourth driving conductive parts 64A and 64B in the lateral direction X. Note that the shape of the control conductive part 65 in plan view can be arbitrarily changed. In one example, the shape of the control conductive part 65 in plan view may be a square, or may be a rectangular shape in which the longitudinal direction Y is the long side direction and the lateral direction X is the short side direction.

[0039] When viewed from the longitudinal direction Y, the second driving conductive part 62 is arranged so as to overlap with the first driving conductive part 61B and the fourth driving conductive part 64B, and the end portion of the switching element mounting part 63a closer to the fourth base material side surface 51f. When viewed from the longitudinal direction Y, the control conductive part 65 is arranged so as to overlap with the first driving conductive part 61A and the fourth driving conductive part 64A, and the end portion of the switching element mounting part 63a closer to the third base material side surface 51e.

[0040] As shown in FIG. 3, the back-side conductive portion 60B is formed on the back surface 51b of the base material 51. The back-side conductive portion 60B includes a pair of conductive portions 66A and 66B for the first terminals, a conductive portion 67 for the second terminal, a conductive portion 68 for the third terminal, a pair of conductive portions 69A and 69B for the fourth terminals, and a conductive portion 70 for the control terminal. Thus, in this embodiment, the semiconductor laser device 1A is a surface-mount package.

[0041] The back-side conductive portion 60B is used as terminals when mounting the semiconductor laser device 1A on a wiring board (not shown) or the like, that is, as the plurality of terminals 40 in FIG. 1. As shown in FIGS. 1 and 3, the pair of conductive portions 66A and 66B for the first terminals constitute the second power supply terminal 42, the conductive portion 67 for the second terminal constitutes the driver connection terminal 45, the conductive portion 68 for the third terminal constitutes the diode connection terminal 44, and the pair of conductive portions 69A and 69B for the fourth terminals constitute the first power supply terminal 41.

[0042] As shown in FIG. 3, the pair of conductive portions 66A and 66B for the first terminals are arranged at both ends in the lateral direction X and the central portion in the longitudinal direction Y of the back surface 51b of the base material. The conductive portion 66A for the first terminal is arranged at a distance from the third side surface 51e of the base material in the lateral direction X in a portion of the back surface 51b of the base material closer to the third side surface 51e in plan view. The conductive portion 66B for the first terminal is arranged at a distance from the fourth side surface 51f of the base material in the lateral direction X in a portion of the back surface 51b of the base material closer to the fourth side surface 51f in plan view. When viewed from the thickness direction Z, the conductive portion 66A for the first terminal is arranged so as to overlap the first driving conductive portion 61A.

[0043] In plan view, the shapes of the first terminal conductive parts 66A and 66B are rectangular with the longitudinal direction Y being the long side direction and the lateral direction X being the short side direction. The size of the first terminal conductive parts 66A and 66B in the lateral direction X is smaller than the size of the first driving conductive parts 61A and 61B in the lateral direction X. The size of the first terminal conductive parts 66A and 66B in the longitudinal direction Y is smaller than the size of the first driving conductive parts 61A and 61B in the longitudinal direction Y. In this embodiment, the shapes of the first terminal conductive parts 66A and 66B in plan view are the same as each other. Note that the shapes of the first terminal conductive parts 66A and 66B in plan view can be arbitrarily changed. For example, the shape of the first terminal conductive part 66A in plan view may be different from the shape of the first terminal conductive part 66B in plan view.

[0044] The third terminal conductive part 68 is disposed in a portion between the first terminal conductive parts 66A and 66B in the lateral direction X on the back surface 51b of the base material. The third terminal conductive part 68 is disposed closer to the first base material side surface 51c in the longitudinal direction Y on the back surface 51b of the base material. When viewed from the thickness direction Z, the third terminal conductive part 68 is disposed so as to overlap with the third driving conductive part 63.

[0045] In plan view, the shape of the third terminal conductive part 68 is rectangular with the longitudinal direction Y being the long side direction and the lateral direction X being the short side direction. For the sake of convenience, the third terminal conductive part 68 is divided by a boundary line Lb into a first terminal part 68a that overlaps with the switching element mounting part 63a of the third driving conductive part 63 and a second terminal part 68b that overlaps with the semiconductor laser element mounting part 63b in the thickness direction Z.

[0046] The size of the first terminal portion 68a in the horizontal direction X is smaller than the size of the switching element mounting portion 63a in the horizontal direction X. The size of the first terminal portion 68a in the vertical direction Y is smaller than the size of the switching element mounting portion 63a in the vertical direction Y. The size of the second terminal portion 68b in the horizontal direction X is larger than the size of the semiconductor laser element mounting portion 63b in the horizontal direction X. The size of the second terminal portion 68b in the vertical direction Y is equal to the size of the semiconductor laser element mounting portion 63b in the vertical direction Y. As shown in FIG. 6, the second terminal portion 68b is formed so as to overlap the fourth driving conductive portions 64A and 64B in the thickness direction Z.

[0047] As shown in FIG. 3, each of the pair of fourth terminal conductive portions 69A and 69B is disposed at an end of the back surface 51b of the base material closer to the first base material side surface 51c in the vertical direction Y. The pair of fourth terminal conductive portions 69A and 69B are spaced apart from the first base material side surface 51c in the vertical direction Y. The fourth terminal conductive portion 69A is disposed at an end of the back surface 51b of the base material closer to the third base material side surface 51e. The fourth terminal conductive portion 69A is spaced apart from the third base material side surface 51e in the horizontal direction X. The fourth terminal conductive portion 69B is disposed at an end of the back surface 51b of the base material closer to the fourth base material side surface 51f. The fourth terminal conductive portion 69B is spaced apart from the fourth base material side surface 51f in the horizontal direction X. The pair of fourth terminal conductive portions 69A and 69B are disposed on both sides of the second terminal portion 68b in the horizontal direction X with a space in the horizontal direction X from the second terminal portion 68b. When viewed from the vertical direction Y, the fourth terminal conductive portion 69A is disposed so as to overlap the first terminal conductive portion 66A. When viewed from the vertical direction Y, the fourth terminal conductive portion 69B is disposed so as to overlap the first terminal conductive portion 66B. When viewed from the horizontal direction X, the pair of fourth terminal conductive portions 69A and 69B are disposed so as to overlap the second terminal portion 68b. When viewed from the thickness direction Z, the fourth terminal conductive portion 69A is disposed so as to overlap the fourth driving conductive portion 64A, and the fourth terminal conductive portion 69B is disposed so as to overlap the fourth driving conductive portion 64B.

[0048] In plan view, the shapes of the pair of conductive portions 69A and 69B for the fourth terminals are rectangular, with the horizontal direction X being the long side direction and the vertical direction Y being the short side direction. The size of the pair of conductive portions 69A and 69B for the fourth terminals in the horizontal direction X is larger than the size of the pair of conductive portions 66A and 66B for the first terminals in the horizontal direction X. The size of the pair of conductive portions 69A and 69B for the fourth terminals in the horizontal direction X is smaller than the size of the pair of conductive portions 64A and 64B for the fourth driving in the horizontal direction X. The size of the pair of conductive portions 69A and 69B for the fourth terminals in the vertical direction Y is smaller than the size of the pair of conductive portions 66A and 66B for the first terminals in the vertical direction Y. The size of the pair of conductive portions 69A and 69B for the fourth terminals in the vertical direction Y is equal to the size of the pair of conductive portions 64A and 64B for the fourth driving in the vertical direction Y. Here, if the difference between the size of the pair of conductive portions 69A and 69B for the fourth terminals in the vertical direction Y and the size of the pair of conductive portions 64A and 64B for the fourth driving in the vertical direction Y is within 5% of the pair of conductive portions 64A and 64B for the fourth driving, for example, it can be said that the size of the pair of conductive portions 69A and 69B for the fourth terminals in the vertical direction Y is equal to the size of the pair of conductive portions 64A and 64B for the fourth driving in the vertical direction Y. In the present embodiment, the shapes of the conductive portions 69A and 69B for the fourth terminals in plan view are the same as each other. Note that the shapes of the conductive portions 69A and 69B for the fourth terminals in plan view can be arbitrarily changed. For example, the shape of the conductive portion 69A for the fourth terminals in plan view may be different from the shape of the conductive portion 69B for the fourth terminals in plan view.

[0049] The conductive portion 67 for the second terminal and the conductive portion 70 for the control terminal are respectively arranged at the end portions of the back surface 51b of the base material closer to the second base material side surface 51d in the vertical direction Y. The conductive portion 67 for the second terminal and the conductive portion 70 for the control terminal are arranged along the horizontal direction X in a state of being separated from each other in the horizontal direction X. The conductive portion 67 for the second terminal and the conductive portion 70 for the control terminal are respectively arranged at a distance from the second base material side surface 51d in the vertical direction Y.

[0050] The conductive portion 67 for the second terminal is arranged at an end portion of the back surface 51b of the base material closer to the fourth base material side surface 51f in the lateral direction X. The conductive portion 67 for the second terminal is arranged at a distance from the fourth base material side surface 51f in the lateral direction X. When viewed from the longitudinal direction Y, the conductive portion 67 for the second terminal is arranged so as to overlap with the conductive portions 66B for the first terminal and 69B for the fourth terminal, and an end portion of the conductive portion 68 for the third terminal closer to the fourth base material side surface 51f. When viewed from the thickness direction Z, the conductive portion 67 for the second terminal is arranged so as to overlap with the conductive portion 62 for the second drive shown in FIG. 2.

[0051] In plan view, the shape of the conductive portion 67 for the second terminal is a rectangular shape in which the lateral direction X is the long side direction and the longitudinal direction Y is the short side direction. The size of the conductive portion 62 for the second drive in the longitudinal direction Y is smaller than the sizes of the pair of conductive portions 66A and 66B for the first terminal and the conductive portion 68 for the third terminal in the longitudinal direction Y. The size of the conductive portion 67 for the second terminal in the lateral direction X is larger than the sizes of the pair of conductive portions 66A and 66B for the first terminal in the lateral direction X. The size of the conductive portion 67 for the second terminal in the lateral direction X is larger than the sizes of the pair of conductive portions 69A and 69B for the fourth terminal in the lateral direction X. Note that the shape of the conductive portion 62 for the second drive in plan view can be arbitrarily changed. In one example, the shape of the conductive portion 62 for the second drive in plan view may be a square, or may be a rectangular shape in which the longitudinal direction Y is the long side direction and the lateral direction X is the short side direction.

[0052] The conductive portion 70 for the control terminal is arranged at an end portion of the back surface 51b of the base material closer to the third base material side surface 51e in the lateral direction X. The conductive portion 70 for the control terminal is arranged at a distance from the third base material side surface 51e in the lateral direction X. When viewed from the longitudinal direction Y, the conductive portion 70 for the control terminal is arranged so as to overlap with the conductive portion 66A for the first terminal and the conductive portion 69A for the fourth terminal, and an end portion of the conductive portion 68 for the third terminal closer to the third base material side surface 51e. When viewed from the thickness direction Z, the conductive portion 70 for the control terminal is arranged so as to overlap with the conductive portion 65 for control.

[0053] In plan view, the shape of the conductive portion 70 for the control terminal is a rectangular shape in which the horizontal direction X is the long side direction and the vertical direction Y is the short side direction. The size of the conductive portion 70 for the control terminal in the vertical direction Y is smaller than the size of the pair of conductive portions 66A and 66B for the first terminals in the vertical direction Y. The size of the conductive portion 70 for the control terminal in the horizontal direction X is larger than the size of the pair of conductive portions 66A and 66B for the first terminals in the horizontal direction X. The size of the conductive portion 70 for the control terminal in the horizontal direction X is larger than the size of the pair of conductive portions 69A and 69B for the fourth terminals in the horizontal direction X. Note that the shape of the conductive portion 70 for the control terminal in plan view can be arbitrarily changed. In one example, the shape of the conductive portion 70 for the control terminal in plan view may be a square, or may be a rectangular shape in which the vertical direction Y is the long side direction and the horizontal direction X is the short side direction.

[0054] As can be seen from FIGS. 2 and 3, the gap Gs1 in the vertical direction Y between the first driving conductive part 61A and the fourth driving conductive part 64A, and the gap Gs1 in the vertical direction Y between the first driving conductive part 61B and the fourth driving conductive part 64B are smaller than the gap Gr1 in the vertical direction Y between the first terminal conductive part 66A and the fourth terminal conductive part 69A, and the gap Gr1 in the vertical direction Y between the first terminal conductive part 66B and the fourth terminal conductive part 69B. In other words, the gap Gr1 is larger than the gap Gs1. Also, the gap Gs2 in the horizontal direction X between the first driving conductive parts 61A, 61B and the third driving conductive part 63 is smaller than the gap Gr2 in the horizontal direction X between the first terminal conductive parts 66A, 66B and the third terminal conductive part 68. In other words, the gap Gr2 is larger than the gap Gs2. Further, the gap Gs3 in the vertical direction Y between the switching element mounting part 63a of the first driving conductive parts 61A, 61B and the third driving conductive part 63 and the second driving conductive part 62 is smaller than the gap Gr3 in the vertical direction Y between the first terminal part 68a of the first terminal conductive part 66A and the third terminal conductive part 68 and the second terminal conductive part 67. In other words, the gap Gr3 is larger than the gap Gs3. The gap Gs4 in the horizontal direction X between the fourth driving conductive parts 64A, 64B and the semiconductor laser element mounting part 63b of the third driving conductive part 63 is smaller than the gap Gr4 in the horizontal direction X between the fourth terminal conductive parts 69A, 69B and the second terminal part 68b of the third terminal conductive part 68. In other words, the gap Gr4 is larger than the gap Gs4. The gap Gs5 in the vertical direction Y between the switching element mounting part 63a of the first driving conductive part 61B and the third driving conductive part 63 and the control conductive part 65 is smaller than the gap Gr5 in the vertical direction Y between the first terminal part 68a of the first terminal conductive part 66B and the third terminal conductive part 68 and the control terminal conductive part 70. In other words, the gap Gr5 is larger than the gap Gs5. Also, the gap Gs6 in the horizontal direction X between the second driving conductive part 62 and the control conductive part 65 is equal to the gap Gr6 in the horizontal direction X between the second terminal conductive part 67 and the control terminal conductive part 70. Here, if the difference between the gap Gs6 and the gap Gr6 is within, for example, 5% of the gap Gs6, it can be said that the gap Gs6 is equal to the gap Gr6. Note that the gap Gr6 may be larger than the gap Gs6.

[0055] As shown in FIGS. 2 to 5, FIG. 7, and FIG. 8, a plurality of connecting portions 60C are provided to connect the main surface side conductive portion 60A and the back surface side conductive portion 60B. Each connecting portion 60C has the same structure and is composed of a through hole 71 and a conductor portion 72 embedded in the through hole 71. The through hole 71 is composed of a metal film 71a formed over the entire inner peripheral surface that constitutes a through hole 52 penetrating the base material 51 in the thickness direction Z. The end of the metal film 71a closer to the base material main surface 51a of the base material 51 is connected to the main surface side conductive portion 60A, and the end of the metal film 71a closer to the base material back surface 51b of the base material 51 is connected to the back surface side conductive portion 60B. In the present embodiment, the material constituting the metal film 71a is the same as the materials constituting the main surface side conductive portion 60A and the back surface side conductive portion 60B. As the material constituting the conductor portion 72, for example, a metal material is used, and Cu (copper) is used in the present embodiment.

[0056] As shown in FIG. 3, the connecting portion 60C includes a plurality of first drive connecting portions 73A, 73B, a plurality of second drive connecting portions 74, a plurality of third drive connecting portions 75, a plurality of fourth drive connecting portions 76A, 76B, and a plurality of control connecting portions 77. In the present embodiment, the outer diameter and the inner diameter of the through holes 71 (see FIG. 4 for example) constituting the plurality of first drive connecting portions 73, the plurality of second drive connecting portions 74, the plurality of third drive connecting portions 75, the plurality of fourth drive connecting portions 76, and the plurality of control connecting portions 77 are equal to each other.

[0057] As shown in FIGS. 2 to 4, the plurality of third drive connecting portions 75 connect the third drive conductive portion 63 and the third terminal conductive portion 68. The plurality of third drive connecting portions 75 include a plurality (nine in the present embodiment) of switching element side connecting portions 75a, one semiconductor laser element side connecting portion 75b, and one intermediate connecting portion 75c. Note that the number of each of the switching element side connecting portion 75a, the semiconductor laser element side connecting portion 75b, and the intermediate connecting portion 75c is not limited to the above number and can be arbitrarily changed.

[0058] The plurality of switching element side connection parts 75a are provided on the switching element mounting part 63a of the third driving conductive part 63. Eight out of the nine switching element side connection parts 75a are provided at positions overlapping with the source electrode 22 of the switching element 20 when viewed from the thickness direction Z. When viewed from the thickness direction Z, the remaining one switching element side connection part 75a is provided at a position overlapping with the gate electrode 23 of the switching element 20. When viewed from the thickness direction Z, the nine switching element side connection parts 75a are provided at positions overlapping with the drain electrode 21 of the switching element 20.

[0059] The semiconductor laser element side connection part 75b is provided on the semiconductor laser element mounting part 63b of the third driving conductive part 63. When viewed from the thickness direction Z, the semiconductor laser element side connection part 75b is provided at a position overlapping with the semiconductor laser element 10.

[0060] The intermediate connection part 75c is provided so as to straddle the boundary part (the boundary line Lb in FIGS. 2 and 3) between the switching element mounting part 63a and the semiconductor laser element mounting part 63b of the third driving conductive part 63. That is, the intermediate connection part 75c is located between the semiconductor laser element side connection part 75b and the switching element side connection part 75a in the longitudinal direction Y. In other words, the intermediate connection part 75c is located between the semiconductor laser element 10 and the switching element 20 in the longitudinal direction Y.

[0061] As shown in FIGS. 2, 3, and 5, a plurality (two in this embodiment) of first driving connection parts 73A connect the first driving conductive part 61A and the first terminal conductive part 66A. The plurality of first driving connection parts 73A are arranged at intervals in the longitudinal direction Y. Each first driving connection part 73A is arranged closer to the third base material side surface 51e among the first driving conductive part 61A and the first terminal conductive part 66A in the lateral direction X. Each first driving connection part 73A is arranged closer to the second driving conductive part 62 (the second terminal conductive part 67) side than the capacitor 30A in the longitudinal direction Y.

[0062] A plurality (two in this embodiment) of first driving connection parts 73B connect the first driving conductive part 61B and the first terminal conductive part 66B. The plurality of first driving connection parts 73B are arranged at intervals in the vertical direction Y so as to align with the plurality of first driving connection parts 73A in the vertical direction Y. Each first driving connection part 73B is arranged closer to the fourth base material side surface 51f among the first driving conductive part 61B and the first terminal conductive part 66B in the horizontal direction X. Each first driving connection part 73B is arranged on the side of the control conductive part 65 (control terminal conductive part 70) rather than the capacitor 30B in the vertical direction Y. Note that the number of the first driving connection parts 73A and 73B is not limited to the above number and can be arbitrarily changed.

[0063] As shown in FIGS. 2, 3, and 6, the fourth driving connection part 76A connects the fourth driving conductive part 64A and the fourth driving connection part 76A. When viewed from the vertical direction Y, the fourth driving connection part 76A is provided at a position overlapping the capacitor 30A. The fourth driving connection part 76A is located on the side of the first base material side surface 51c rather than the capacitor 30A among the fourth driving conductive parts 64A in the vertical direction Y.

[0064] The fourth driving connection part 76B connects the fourth driving conductive part 64B and the fourth driving connection part 76B. When viewed from the vertical direction Y, the fourth driving connection part 76A is provided at a position overlapping the capacitor 30B. The fourth driving connection part 76B is located on the side of the first base material side surface 51c rather than the capacitor 30B among the fourth driving conductive parts 64B in the vertical direction Y. Note that a plurality of the fourth driving connection parts 76A and 76B may be provided respectively.

[0065] As shown in FIGS. 2, 3, and 8, each of the plurality (three in this embodiment) of second drive connection portions 74 connects the second drive conductive portion 62 and the second terminal conductive portion 67. The plurality of second drive connection portions 74 are arranged at intervals in the lateral direction X. The distance Dx2 in the lateral direction X between the second drive connection portion 74 closest to the third base material side surface 51e among the three second drive connection portions 74 and the edge of the second drive conductive portion 62 closest to the third base material side surface 51e is greater than the distance Dx1 in the lateral direction X between the second drive connection portion 74 closest to the fourth base material side surface 51f among the three second drive connection portions 74 and the edge of the second drive conductive portion 62 closest to the fourth base material side surface 51f. Note that the number of the second drive connection portions 74 is not limited to the above number and can be arbitrarily changed.

[0066] Each of the plurality (three in this embodiment) of control connection portions 77 connects the control conductive portion 65 and the control terminal conductive portion 70. The plurality of control connection portions 77 are arranged at intervals in the lateral direction X. The distance Dx4 in the lateral direction X between the control connection portion 77 closest to the fourth base material side surface 51f among the three control connection portions 77 and the edge of the control conductive portion 65 closest to the fourth base material side surface 51f is greater than the distance Dx3 in the lateral direction X between the control connection portion 77 closest to the third base material side surface 51e among the three control connection portions 77 and the edge of the control conductive portion 65 closest to the third base material side surface 51e. Note that the number of the control connection portions 77 is not limited to the above number and can be arbitrarily changed.

[0067] Next, the connection structure between the semiconductor laser element 10, the switching element 20, the capacitors 30A and 30B, and the conductive portion 60 will be described. The capacitor 30A is connected to the first driving conductive part 61A and the fourth driving conductive part 64A. The capacitor 30A is arranged so as to straddle the gap in the vertical direction Y between the first driving conductive part 61A and the fourth driving conductive part 64A. In the present embodiment, the capacitor 30A is arranged such that the first terminal 31 and the second terminal 32 are arranged along the vertical direction Y. The first terminal 31 of the capacitor 30A is joined to the first driving conductive part 61A by a conductive bonding material such as Ag paste or solder. The second terminal 32 of the capacitor 30A is joined to the fourth driving conductive part 64A by a conductive bonding material. The second terminal 32 is arranged at a portion closer to the first driving conductive part 61A than the fourth driving connection part 76A of the fourth driving conductive part 64A in the vertical direction Y.

[0068] The capacitor 30B is connected to the first driving conductive part 61B and the fourth driving conductive part 64B. The capacitor 30B is arranged so as to straddle the gap in the vertical direction Y between the first driving conductive part 61B and the fourth driving conductive part 64B. In the present embodiment, the capacitor 30B is arranged such that the first terminal 31 and the second terminal 32 are arranged along the vertical direction Y. The first terminal 31 of the capacitor 30B is joined to the first driving conductive part 61B by a conductive bonding material. The second terminal 32 of the capacitor 30B is joined to the fourth driving conductive part 64B by a conductive bonding material. The second terminal 32 is arranged at a portion closer to the first driving conductive part 61B than the fourth driving connection part 76B of the fourth driving conductive part 64B in the vertical direction Y.

[0069] As shown in FIGS. 2 and 4, the semiconductor laser element 10 is joined to the third driving conductive portion 63 by a conductive joining material such as Ag (silver) paste or solder. Specifically, the semiconductor laser element 10 is disposed closer to the first base material side surface 51c than the intermediate connection portion 75c in the semiconductor laser element mounting portion 63b of the third driving conductive portion 63. When viewed from the lateral direction X, the semiconductor laser element 10 overlaps with the fourth driving conductive portions 64A and 64B, and further overlaps with the second terminals 32 of the capacitors 30A and 30B. The semiconductor laser element 10 is disposed such that the cathode electrode 12 faces the third driving conductive portion 63 side in the thickness direction Z. Then, the cathode electrode 12 of the semiconductor laser element 10 is joined to the third driving conductive portion 63 by a conductive joining material.

[0070] The switching element 20 is joined to the third driving conductive portion 63 by a conductive joining material such as Ag paste or solder. Specifically, the semiconductor laser element 10 is mounted closer to the second base material side surface 51d than the intermediate connection portion 75c in the switching element mounting portion 63a of the third driving conductive portion 63. When viewed from the lateral direction X, the switching element 20 overlaps with the first driving conductive portions 61A and 61B, and further overlaps with the first terminals 31 of the capacitors 30A and 30B. The switching element 20 is disposed such that the drain electrode 21 faces the third driving conductive portion 63 side in the thickness direction Z. Then, the drain electrode 21 is joined to the third driving conductive portion 63 by a conductive joining material. In this way, the drain electrode 21 and the cathode electrode 12 of the semiconductor laser element 10 are electrically connected via the third driving conductive portion 63.

[0071] As shown in FIG. 2, the anode electrode 11 of the semiconductor laser element 10, the source electrode 22 and the gate electrode 23 of the switching element 20 each face the side opposite to the support substrate 50 side in the thickness direction Z. These anode electrode 11, source electrode 22, and gate electrode 23 are electrically connected to the first driving conductive portions 61A and 61B, the second driving conductive portion 62, the fourth driving conductive portions 64A and 64B, and the control conductive portion 65 via the connection member 80.

[0072] The connection member 80 includes first drive connection members 81 and 82, a second drive connection member 83, a control connection member 84, and laser connection members 85 and 86. The connection member 80 is a wire made of a metal such as Au (gold), Cu (copper), or Al (aluminum). In this embodiment, the connection member 80 is formed by wire bonding.

[0073] The first drive connection member 81 connects the source electrode 22 and the first drive conductive portion 61A. The number of the first drive connection members 81 is not particularly limited, but in this embodiment, it is three. The three first drive connection members 81 are arranged at intervals in the vertical direction Y. The first drive connection member 81 has a first end portion 81a and a second end portion 81b. The first end portion 81a is joined to the source electrode 22. The second end portion 81b is joined to the first drive conductive portion 61A. The first end portions 81a of the three first drive connection members 81 are each disposed closer to the semiconductor laser element 10 than the gate electrode 23 among the source electrodes 22 in the vertical direction Y and closer to the first drive conductive portion 61A than the gate electrode 23 in the horizontal direction X. The second end portions 81b of the three first drive connection members 81 are each disposed closer to the control conductive portion 65 than the capacitor 30A among the first drive conductive portions 61A in the vertical direction Y and closer to the switching element 20 than the first drive connection portion 73A in the horizontal direction X. When viewed from the vertical direction Y, the second end portion 81b is disposed so as to overlap a portion closer to the switching element 20 than the central portion in the horizontal direction X of the capacitor 30A.

[0074] The first drive connection member 82 connects the source electrode 22 and the first drive conductive portion 61B. The number of the first drive connection members 82 is not particularly limited, but in this embodiment, it is three. That is, the number of the first drive connection members 82 is equal to the number of the first drive connection members 81. The three first drive connection members 82 are arranged at intervals in the vertical direction Y. The first drive connection member 82 has a first end portion 82a and a second end portion 82b. The first end portion 82a is joined to the source electrode 22. The second end portion 82b is joined to the first drive conductive portion 61B. The first end portions 82a of the three first drive connection members 82 are respectively arranged closer to the semiconductor laser element 10 than the gate electrode 23 of the source electrode 22 in the vertical direction Y and closer to the first drive conductive portion 61B than the gate electrode 23 in the horizontal direction X. The second end portions 82b of the three first drive connection members 82 are respectively arranged closer to the second drive conductive portion 62 than the capacitor 30B of the first drive conductive portion 61B in the vertical direction Y and closer to the switching element 20 than the first drive connection portion 73B in the horizontal direction X. When viewed from the vertical direction Y, the second end portion 82b is arranged so as to overlap a portion closer to the switching element 20 than the central portion in the horizontal direction X of the capacitor 30B.

[0075] The second driving connection member 83 connects the source electrode 22 and the second driving conductive portion 62. The number of the second driving connection members 83 is not particularly limited, but in this embodiment, it is one. The second driving connection member 83 is disposed closer to the second base material side surface 51d than the three first driving connection members 81. The second driving connection member 83 has a first end portion 83a and a second end portion 83b. The first end portion 83a is joined to the source electrode 22. The second end portion 83b is joined to the second driving conductive portion 62. The first end portion 83a is disposed at an end of the source electrode 22 closer to the second driving conductive portion 62 in the longitudinal direction Y. The second end portion 83b is disposed at an end of the second driving conductive portion 62 closer to the switching element 20 in the longitudinal direction Y and, when viewed from the longitudinal direction Y, at a portion overlapping the source electrode 22 of the second driving conductive portion 62. In this embodiment, the second end portion 83b is disposed at a portion closer to the control conductive portion 65 than the three second driving connection portions 74 of the second driving conductive portion 62.

[0076] The control connection member 84 connects the gate electrode 23 and the control conductive portion 65. The number of the control connection members 84 is not particularly limited, but in this embodiment, it is one. The control connection member 84 has a first end portion 84a and a second end portion 84b. The first end portion 84a is joined to the gate electrode 23. The second end portion 84b is disposed at an end of the control conductive portion 65 closer to the second driving conductive portion 62 in the lateral direction X. In this embodiment, the second end portion 84b is disposed at a portion closer to the second driving conductive portion 62 than the three control connection portions 77 of the control conductive portion 65.

[0077] The laser connection member 85 connects the anode electrode 11 of the semiconductor laser element 10 and the fourth driving conductive part 64A. The number of the laser connection members 85 is not particularly limited, but in this embodiment, it is two. The two laser connection members 85 are arranged at intervals in the vertical direction Y. Each laser connection member 85 has a first end portion 85a and a second end portion 85b. The first end portion 85a is connected to the anode electrode 11. Specifically, the first end portion 85a is disposed at the central portion in the lateral direction X of the anode electrode 11. The second end portion 85b is connected to the fourth driving conductive part 64A. Specifically, the second end portion 85b is disposed at a portion closer to the semiconductor laser element 10 than the central portion in the lateral direction X of the fourth driving conductive part 64A among the fourth driving conductive parts 64A in the lateral direction X.

[0078] The laser connection member 86 connects the anode electrode 11 and the fourth driving conductive part 64B. The number of the laser connection members 86 is not particularly limited, but in this embodiment, it is two. The two laser connection members 86 are arranged at intervals in the vertical direction Y. Each laser connection member 86 has a first end portion 86a and a second end portion 86b. The first end portion 86a is connected to the anode electrode 11. Specifically, the first end portion 86a is disposed at the central portion in the lateral direction X of the anode electrode 11. In a plan view, the first end portion 85a of the laser connection member 85 and the first end portion 86a of the laser connection member 86 are alternately arranged in the vertical direction Y. The second end portion 86b is connected to the fourth driving conductive part 64B. Specifically, the second end portion 86b is disposed at a portion closer to the semiconductor laser element 10 than the central portion in the lateral direction X of the fourth driving conductive part 64B among the fourth driving conductive parts 64B in the lateral direction X.

[0079] As shown in FIGS. 4 to 8, the sealing member 90 is laminated on the substrate main surface 51a of the substrate 51 of the support substrate 50 in the thickness direction Z. The sealing member 90 transmits the pulsed laser light of the semiconductor laser element 10 and seals the main surface side conductive portion 60A, the semiconductor laser element 10, the switching element 20, the capacitor 30, and the connection member 80, respectively. That is, the sealing member 90 is configured such that the portion where the pulsed laser light of the semiconductor laser element 10 is output is transparent or translucent. The portion other than the portion where the pulsed laser light is output in the sealing member 90 does not have to be transparent or translucent. Thus, the sealing member 90 may have a two-member configuration including a transparent or translucent portion and a portion through which light does not transmit. In the present embodiment, it is configured to be entirely transparent or translucent. The material constituting the sealing member 90 is made of, for example, a transparent epoxy resin or a silicone resin.

[0080] The sealing member 90 has a sealing main surface 91, a first sealing side surface 92, a second sealing side surface 93, a third sealing side surface 94, and a fourth sealing side surface 95. The sealing main surface 91 is a surface facing the side opposite to the support substrate 50 in the thickness direction Z of the sealing member 90. That is, the sealing main surface 91 is a surface facing the same direction as the element main surface 24a of the switching element 20. Each of the sealing side surfaces 92 to 95 is a surface formed between the sealing main surface 91 and the support substrate 50 in the thickness direction Z, and is a surface extending in a direction intersecting the sealing main surface 91. The first sealing side surface 92 and the second sealing side surface 93 are surfaces facing opposite sides in the vertical direction Y. The first sealing side surface 92 is a surface facing the same direction as the first substrate side surface 51c of the substrate 51 in the vertical direction Y. The second sealing side surface 93 is a surface facing the same direction as the second substrate side surface 51d of the substrate 51 in the vertical direction Y. The third sealing side surface 94 and the fourth sealing side surface 95 are surfaces facing opposite sides in the horizontal direction X. The third sealing side surface 94 is a surface facing the same direction as the third substrate side surface 51e of the substrate 51 in the horizontal direction X. The fourth sealing side surface 95 is a surface facing the same direction as the fourth substrate side surface 51f of the substrate in the horizontal direction X. In the present embodiment, the laser light L from the semiconductor laser element 10 is emitted from the first sealing side surface 92 of the sealing member 90. Further, in the present embodiment, the first sealing side surface 92 of the sealing member 90 is a flat and smooth surface. Thereby, scattering of the laser light L can be suppressed, and the emission efficiency of the laser light can be increased.

[0081] Next, an example of the detailed configuration of the semiconductor laser element 10 will be described. As shown in FIGS. 9 and 10, the semiconductor laser element 10 includes a substrate 13 and a mesa-type semiconductor light-emitting layer 14 laminated on the substrate 13 in the thickness direction Z. The semiconductor light-emitting layer 14 corresponds to the light-emitting portion.

[0082] The substrate 13 is made of an n-type semiconductor substrate containing GaAs (gallium arsenide). The n-type impurity includes at least one of Si (silicon), Te (tellurium), and Se (selenium).

[0083] The semiconductor light-emitting layer 14 generates laser light L. The semiconductor light-emitting layer 14 generates laser light L having a peak wavelength of 0.7 μm or more and 2.5 μm or less. That is, the semiconductor light-emitting layer 14 generates laser light L in the near-infrared region. Preferably, the semiconductor light-emitting layer 14 generates laser light L having a peak wavelength of 800 nm or more and 1000 nm or less. That is, the semiconductor light-emitting layer 14 generates laser light L in the infrared region. The semiconductor light-emitting layer 14 has a mesa structure 15 including an n-type buffer layer 14a, a first light-emitting unit layer 14b, a first tunnel junction layer 14c, a second light-emitting unit layer 14d, a second tunnel junction layer 14e, a third light-emitting unit layer 14f, and a p-type contact layer 14g.

[0084] The n-type buffer layer 14a is laminated on the substrate 13. The n-type buffer layer 14a contains GaAs. The n-type buffer layer 14a contains at least one of Si, Te, and Se as an n-type impurity. The n-type impurity concentration of the n-type buffer layer 14a is, for example, 1×10 18 cm -3 or more and 1×10 19 cm -3 or less.

[0085] Each light-emitting unit layer 14b, 14d, 14f generates laser light L by the recombination of holes and electrons. The first light-emitting unit layer 14b, the second light-emitting unit layer 14d, and the third light-emitting unit layer 14f are laminated on the n-type buffer layer 14a in this order. As shown by the white arrows in FIG. 10, laser light is emitted from each light-emitting unit layer 14b, 14d, 14f along the lateral direction X.

[0086] Between the light-emitting units adjacent in the stacking direction, the first tunnel junction layer 14c and the second tunnel junction layer 14e are interposed. Specifically, the first tunnel junction layer 14c is interposed between the first light-emitting unit layer 14b and the second light-emitting unit layer 14d, and the second tunnel junction layer 14e is interposed between the second light-emitting unit layer 14d and the third light-emitting unit layer 14f. Each tunnel junction layer 14c, 14e generates a tunnel current due to the tunnel effect, and the tunnel current flows through each light-emitting unit layer 14b, 14d, 14f.

[0087] The p-type contact layer 14g is formed on the third light-emitting unit layer 14f. The p-type contact layer 14g contains GaAs. The p-type contact layer 14g contains C (carbon) as a p-type impurity.

[0088] The semiconductor light-emitting layer 14 is covered by an insulating layer 16. The insulating layer 16 is formed in a film shape. The insulating layer 16 may contain silicon nitride (Si3N4) or silicon oxide such as SiO2 or SiO. In the present embodiment, the insulating layer 16 contains silicon nitride. A contact opening 16a that exposes the semiconductor light-emitting layer 14 is formed in a portion of the insulating layer 16 that covers the top of the mesa structure 15. A contact electrode 17 is formed in the contact opening 16a. The contact electrode 17 is electrically connected to the semiconductor light-emitting layer 14. The contact electrode 17 is drawn out from the contact opening 16a onto the insulating layer 16. An anode electrode 11 (see FIGS. 4 and 6) is formed on the contact electrode 17. Note that, in the thickness direction of the substrate 13, a cathode electrode 12 (see FIGS. 4 and 6) is formed on the back surface of the substrate 13 on the side opposite to the mesa structure with respect to the substrate 13.

[0089] (Operation) Next, the operation of the semiconductor laser device 1A of the present embodiment will be described. FIG. 11 shows a schematic circuit diagram when the semiconductor laser device 1X of the comparative example is applied to the laser system 100. As is known by comparison with the semiconductor laser device 1A of the present embodiment, the input electrode 142 of the driver circuit 140 is connected to the negative electrode of the power supply 110 and the capacitor 30 in terms of the circuit.

[0090] FIG. 12 is a graph showing the transition of the current flowing through the semiconductor laser element 10 and the transition of the voltage applied to the gate electrode 23 of the switching element 20 when the laser system 100 to which the semiconductor laser device 1X of the comparative example is applied is driven. FIG. 13 is a graph showing the transition of the voltage applied to the first drive connection members 81 and 82 when the laser system 100 to which the semiconductor laser device 1X of the comparative example is applied is driven.

[0091] As shown in FIG. 11, when power is supplied from the power supply 110 of the laser system 100 to which the semiconductor laser device 1X of the comparative example is applied to the semiconductor laser device 1X, when the switching element 20 is in the off state, it is stored in the capacitor 30, and when the switching element 20 is in the on state, the charge stored in the capacitor 30 flows to the semiconductor laser element 10 and the switching element 20. Here, for example, when laser light is emitted with a short pulse width of 10 ns, the rise of the current flowing through the semiconductor laser element 10 becomes steep. For this reason, a large electromotive voltage is generated in the parasitic inductance of the semiconductor laser device 1X. As a result, a large pulse current also flows through the switching element 20, and an electromotive voltage VLs is generated in the inductance between the source electrode 22 and the first terminal 31 of the capacitor 30 (30A, 30B), that is, the parasitic inductance caused by the first driving connection members 81, 82. In this case, even when trying to apply the voltage Vg between the input electrode 142 and the output electrode 141 of the driver circuit 140 to the gate electrode 23 of the switching element 20, due to the electromotive voltage VLs, the voltage Vgs (control voltage) actually applied to the gate electrode 23 becomes a voltage of Vg - VLs. Due to such a decrease in the voltage Vgs, the charge of the capacitor 30 flows to the semiconductor laser element 10 and the switching element 20 in a state where the on-resistance of the switching element 20 does not sufficiently decrease, so that the current ILD flowing through the semiconductor laser element 10 becomes small. That is, as shown in FIGS. 12 and 13, when the voltage Vgs rises between time t1 and time t2, a gate current flows to generate an electromotive voltage VLs, and the electromotive voltage VLs once drops in the region where the gate current stabilizes between time t2 and time t3. Then, when the steep current ILD rises from time t3 to time t4, the electromotive voltage VLs greatly increases, and as a result, the voltage Vgs greatly decreases between time t3 and time t4. As a result, the peak value of the current ILD does not increase.

[0092] In view of this point, in the present embodiment, as shown in FIG. 14, when the semiconductor laser device 1A is applied to the laser system 100, the positive electrode 111 of the power supply 110 is connected to the fourth driving conductive part 64A via the fourth terminal conductive part 69A and the fourth driving connection part 76A (both shown in FIG. 3), and the negative electrode 112 of the power supply 110 is connected to the first driving conductive part 61A via the first terminal conductive part 66A and the first driving connection part 73A (both shown in FIG. 3). Also, the output electrode 141 of the driver circuit 140 is connected to the control conductive part 65 via the control terminal conductive part 70 and the control connection part 77 (both shown in FIG. 3), and the input electrode 142 is connected to the second driving conductive part 62 via the second terminal conductive part 67 and the second driving connection part 74 (both shown in FIG. 3). According to such a connection configuration, as shown in FIG. 15, when power is supplied from the power supply 110 to the semiconductor laser device 1A, when the switching element 20 is in the off state, it is stored in the capacitors 30A and 30B, and when the switching element 20 is in the on state, the charges stored in the capacitors 30A and 30B flow to the semiconductor laser element 10 and the switching element 20. More specifically, a first driving loop in which a current based on the charge stored in the capacitor 30A flows through the semiconductor laser element 10 and the switching element 20, and a second driving loop in which a current based on the charge stored in the capacitor 30B flows through the semiconductor laser element 10 and the switching element 20 are individually formed. Specifically, in the first driving loop, the current flows in the order of the second terminal 32 of the capacitor 30A, the fourth driving conductive part 64A, the laser connection member 85, the anode electrode 11 of the semiconductor laser element 10, the cathode electrode 12, the third driving conductive part 63, the drain electrode 21 of the switching element 20, the source electrode 22, the first driving connection member 81, and the first terminal 31 of the capacitor 30A. In the second driving loop, the current flows in the order of the second terminal 32 of the capacitor 30A, the fourth driving conductive part 64B, the laser connection member 86, the anode electrode 11 of the semiconductor laser element 10, the cathode electrode 12, the third driving conductive part 63, the drain electrode 21 of the switching element 20, the source electrode 22, the first driving connection member 82, and the first terminal 31 of the capacitor 30B. And a current flows from the source electrode 22 of the switching element 20 to the negative electrode of the power supply 110 via the first driving conductive part 61A.

[0093] On the other hand, when a voltage Vg is generated between the input electrode 142 and the output electrode 141 of the driver circuit 140, a voltage Vgs, which is the voltage between the gate and the source, is applied to the gate electrode 23 of the switching element 20. Specifically, between the driver circuit 140 and the switching element 20, a control loop is formed in which current flows in the order of the output electrode 141 of the driver circuit 140, the conductive portion 70 for the control terminal, the communication portion 77 for control, the conductive portion 65 for control, the connecting member 84 for control, the gate electrode 23, the source electrode 22, the connecting member 83 for second drive, the conductive portion 62 for second drive, the communication portion 74 for second drive, the conductive portion 67 for second terminal, and the input electrode 142. Thus, since the input electrode 142 and the source electrode 22 are electrically connected independently of the first drive loop and the second drive loop, the voltage Vgs applied to the gate electrode 23 is generated based on the potential of the source electrode 22 connected to the input electrode 142.

[0094] In this way, since the first drive loop and the second drive loop of the current between the power supply 110, the semiconductor laser element 10, and the switching element 20 and the control loop of the current between the driver circuit 140 and the switching element 20 are formed separately, the voltage Vg applied to the input electrode 142 of the driver circuit 140 and the voltage Vgs applied to the gate electrode 23 are less likely to be affected by the first drive loop and the second drive loop, respectively. That is, since the connecting member 83 for second drive electrically connects the input electrode 142 and the source electrode 22, the driver circuit 140 is less likely to be affected by the electromotive force VLs due to the parasitic inductance Ls caused by the connecting members 81 and 82 for first drive.

[0095] Therefore, as shown in FIG. 15, the voltage Vgs rises more rapidly than the voltage Vgs of the semiconductor laser device 1X of the comparative example, and there is almost no voltage drop due to the electromotive force VLs. For this reason, the peak value of the current ILD flowing through the semiconductor laser element 10 of the semiconductor laser device 1A of the present embodiment becomes larger than the peak value of the current ILD flowing through the semiconductor laser element 10 of the semiconductor laser device 1X of the comparative example. Also, the rise of the current ILD becomes steeper. In addition, in the present embodiment, since the voltage Vgs rises rapidly and there is no significant drop in the voltage Vgs, the pulse width PW of the current ILD of the present embodiment becomes smaller than the pulse width PW of the current ILD of the semiconductor laser device 1X of the comparative example.

[0096] (Effect) According to the semiconductor laser device 1A of the present embodiment, the following effects can be obtained. (1-1) The semiconductor laser device 1A includes first driving connection members 81 and 82 that connect the source electrode 22 of the switching element 20 to the first driving conductive parts 61A and 61B, and a second driving connection member 83 that connects the source electrode 22 to the second driving conductive part 62. According to this configuration, a first driving loop, which is a first path of the current flowing from the source electrode 22 of the switching element 20 to the first driving conductive parts 61A and 61B via the first driving connection members 81 and 82, and a second driving loop, and a control loop, which is a second path of the current flowing from the source electrode 22 to the second driving conductive part 62 via the second driving connection member 83, are individually formed. Therefore, the influence of the current fluctuations in the first driving loop and the second driving loop on the control loop is reduced. That is, in the control loop, it becomes difficult to be affected by the inductance of the first driving connection members 81 and 82. Therefore, in the control loop, the influence of the back electromotive force (electromotive force VLs) caused by the inductance of the first driving connection members 81 and 82 on the voltage Vgs applied to the gate electrode 23 of the switching element 20 can be reduced.

[0097] (1-2) In the vertical direction Y, the second driving conductive part 62 is arranged on the side opposite to the semiconductor laser element 10 with respect to the switching element 20. According to this configuration, the control loop can be formed at a position far from the first driving loop and the second driving loop. Therefore, the control loop is less likely to be affected by the first driving loop and the second driving loop.

[0098] (1-3) The semiconductor laser device 1A includes capacitors 30A and 30B. According to this configuration, compared with a single capacitor, by connecting the capacitors 30A and 30B in parallel, the influence due to the parasitic inductance of the capacitors 30A and 30B can be reduced, and a current with a larger peak and a smaller pulse width can be made to flow through the semiconductor laser element 10. For this reason, a semiconductor laser element 10 with high output can be applied.

[0099] (1-4) The capacitors 30A and 30B are arranged closer to the semiconductor laser element 10 than the switching element 20 in the vertical direction Y. According to this configuration, the first driving loop and the second driving loop can be formed at positions far from the control loop. Therefore, the control loop is less likely to be affected by the first driving loop and the second driving loop. In addition, since the length of the current path in the first driving loop and the second driving loop becomes shorter, the inductance of the semiconductor laser device 1A can be reduced.

[0100] (1-5) Capacitors 30A and 30B are arranged on both sides of the switching element 20 in the lateral direction X, and the first driving conductive parts 61A and 61B are arranged on both sides of the switching element 20 in the lateral direction X. The first driving connection member 81 connects the source electrode 22 of the switching element 20 and the first driving conductive part 61A, and the first driving connection member 82 connects the source electrode 22 and the first driving conductive part 61B. According to this configuration, two driving loops, namely the first driving loop and the second driving loop, are formed as the driving paths of the current. Therefore, compared with a single driving loop, the lengths of the first driving loop and the second driving loop are shortened, and the current balance between the first driving loop and the second driving loop can be achieved.

[0101] (1-6) The semiconductor laser device 1A includes a third driving conductive part 63 that connects the drain electrode 21 of the switching element 20 and the cathode electrode 12 of the semiconductor laser element 10. According to this configuration, the drain electrode 21 and the cathode electrode 12 can be connected by the third driving conductive part 63 at the shortest distance, and the cross-sectional area of the third driving conductive part 63 can be made larger than that of a wire. Therefore, the inductance between the cathode electrode 12 and the drain electrode 21 can be reduced.

[0102] (1-7) In the lateral direction X, the control conductive part 65 and the second driving conductive part 62 are adjacent to each other. According to this configuration, the current path constituting the control loop can be made smaller, so the inductance in the control loop can be reduced.

[0103] Also, the second driving conductive part 62 is arranged closer to the control conductive part 65 than the first driving connection member 82 closest to the capacitors 30A and 30B among the plurality of first driving connection members 82. According to this configuration, the control loop is less likely to be affected by the second driving loop.

[0104] (1-8) The first drive connection members 81 and 82 each consist of a plurality of wires. According to this configuration, the inductance between the first drive conductive part 61A and the source electrode 22 of the switching element 20, and the inductance between the first drive conductive part 61B and the source electrode 22 can be reduced respectively.

[0105] (1-9) The wire diameters of the first drive connection members 81 and 82 are equal to each other and the wire diameter of the second drive connection member 83. According to this configuration, when forming the first drive connection members 81 and 82 and the second drive connection member 83 by wire bonding respectively, it is not necessary to change the wire material. Therefore, the process of forming the first drive connection members 81 and 82 and the second drive connection member 83 can be simplified.

[0106] (1-10) The wire diameters of the first drive connection members 81 and 82, the wire diameter of the second drive connection member 83, and the wire diameters of the laser connection members 85 and 86 are equal to each other. According to this configuration, when forming each of the drive connection members 81 - 83 and the laser connection members 85 and 86 by wire bonding respectively, it is not necessary to change the wire material. Therefore, the process of forming each of the drive connection members 81 - 83 and the laser connection members 85 and 86 can be simplified.

[0107] (1-11) The wire diameters of the first drive connection members 81 and 82, the wire diameter of the second drive connection member 83, the wire diameter of the control connection member 84, and the wire diameters of the laser connection members 85 and 86 are equal to each other. According to this configuration, when forming each of the connection members 81 - 86 by wire bonding respectively, it is not necessary to change the wire material. Therefore, the process of forming each of the connection members 81 - 86 can be simplified.

[0108] (1-12) The ends of the fourth drive conductive parts 64A and 64B closer to the semiconductor laser element 10 are close to the semiconductor laser element 10 in a plan view. The laser connection member 85 is joined to the end of the fourth drive conductive part 64A closer to the semiconductor laser element 10, and the laser connection member 86 is joined to the end of the fourth drive conductive part 64B closer to the semiconductor laser element 10. According to this configuration, since the lengths of the laser connection members 85 and 86 can be shortened, the inductance caused by the laser connection members 85 and 86 can be reduced.

[0109] (1-13) The gap between adjacent back surface side conductive parts 60B on the back surface 51b of the base material 51 of the support substrate 50 is larger than the gap between adjacent main surface side conductive parts 60A on the main surface 51a of the base material. Thereby, when mounted on the wiring board, it is suppressed that a conductive joint member such as solder is formed so as to connect the adjacent back surface side conductive parts 60B. For this reason, a short circuit is less likely to occur.

[0110] In other words, the gap between adjacent main surface side conductive parts 60A on the main surface 51a of the base material is smaller than the gap between adjacent back surface side conductive parts 60B on the back surface 51b of the base material. Thereby, the lengths of the first drive connection members 81 and 82 that connect the switching element 20 and the first drive conductive parts 61A and 61B can be shortened. Also, the length of the first drive connection member 82 that connects the switching element 20 and the second drive conductive part 62 can be shortened. Also, the length of the control connection member 84 that connects the switching element 20 and the control conductive part 65 can be shortened. Also, the lengths of the laser connection members 85 and 86 that connect the semiconductor laser element 10 and the fourth drive conductive parts 64A and 64B can be shortened. Therefore, the inductance caused by each of the connection members 81 to 86 can be reduced. In addition, since the length of the control connection member 84 is shortened, noise is less likely to occur in the signal from the driver circuit 140.

[0111] (1-14) The semiconductor laser element 10 is disposed at the central portion in the lateral direction X of the base material 51. According to this configuration, since there is no bias in the lateral direction X of the semiconductor laser element 10 with respect to the support substrate 50, the wiring pattern of the wiring substrate can be designed without considering the above bias of the semiconductor laser element 10. Therefore, the usability of the semiconductor laser device 1A is improved.

[0112] (1-15) The semiconductor laser element 10 is capable of emitting laser light with a pulse width of 10 ns or less. According to this configuration, the accuracy of two-dimensional or three-dimensional distance measurement using the semiconductor laser device 1A can be improved.

[0113] On the other hand, in such a semiconductor laser element 10, since the pulse width is short, the temporal change of the current ILD flowing through the semiconductor laser element 10 tends to be steep. That is, the influence of the inductance Ls between the first terminal 31 of the capacitors 30A and 30B and the source electrode 22 of the switching element 20 on the voltage Vg applied to the gate electrode 23 of the switching element 20 becomes large. However, in the present embodiment, as described above, since the first driving loop, the second driving loop, and the control loop are formed separately, the influence of the inductance Ls on the voltage Vg is reduced, so that the current ILD flowing through the semiconductor laser element 10 can be increased.

[0114] [Modification Example of the First Embodiment] The semiconductor laser device 1A of the first embodiment can be modified as follows, for example. The following modification examples can be combined as long as no technical contradiction occurs. In the following modification examples, parts common to the first embodiment are denoted by the same reference numerals as those in the first embodiment, and the description thereof is omitted.

[0115] · In the first embodiment, the semiconductor laser device 1A was configured to include one semiconductor laser element 10, but the number of semiconductor laser elements 10 is not particularly limited and can be arbitrarily changed. That is, the semiconductor laser device 1A may include a plurality of semiconductor laser elements 10. In one example, as shown in FIG. 17, the semiconductor laser device 1A includes two semiconductor laser elements 10A and 10B.

[0116] As shown in FIG. 17, the shapes of the third driving conductive part 63 and the fourth driving conductive parts 64A and 64B in a plan view are different from those of the third driving conductive part 63 and the fourth driving conductive parts 64A and 64B in the first embodiment, respectively. Specifically, in order to mount the semiconductor laser elements 10A and 10B, the size in the lateral direction X of the semiconductor laser element mounting part 63b of the third driving conductive part 63 is increased. On the other hand, as the size in the lateral direction X of the semiconductor laser element mounting part 63b is increased, the size in the lateral direction X of the fourth driving conductive parts 64A and 64B is decreased. Thereby, an increase in the size of the semiconductor laser device 1A including the semiconductor laser elements 10A and 10B can be suppressed.

[0117] The semiconductor laser elements 10A and 10B are each mounted on the semiconductor laser element mounting part 63b by a conductive bonding material. The semiconductor laser elements 10A and 10B are arranged at intervals in the lateral direction X in a state where they are aligned with each other in the longitudinal direction Y. The semiconductor laser elements 10A and 10B are each arranged such that the cathode electrode 12 (not shown in FIG. 17) faces the semiconductor laser element mounting part 63b. For this reason, the cathode electrodes 12 of the semiconductor laser elements 10A and 10B are electrically connected to the semiconductor laser element mounting part 63b. That is, the cathode electrode 12 of the semiconductor laser element 10A and the cathode electrode 12 of the semiconductor laser element 10B are electrically connected.

[0118] The semiconductor laser element 10A is disposed on the side of the fourth driving conductive part 64A in the semiconductor laser element mounting part 63b in the lateral direction X. The anode electrode 11 of the semiconductor laser element 10A and the fourth driving conductive part 64A are electrically connected by four laser connection members 85. The four laser connection members 85 are arranged at intervals in the longitudinal direction Y.

[0119] The semiconductor laser element 10B is disposed on the side of the fourth driving conductive part 64B in the semiconductor laser element mounting part 63b in the lateral direction X. The anode electrode 11 of the semiconductor laser element 10B and the fourth driving conductive part 64B are electrically connected by four laser connection members 86. The four laser connection members 86 are arranged at intervals in the longitudinal direction Y.

[0120] As shown in FIG. 18, the shape of the back surface side conductive part 60B as viewed from the thickness direction Z, that is, the shapes of the respective terminal conductive parts 66A, 66B, 67, 68, 69A, 69B, 70 as viewed from the thickness direction Z are the same as the shapes of the respective terminal conductive parts 66A, 66B, 67, 68, 69A, 69B, 70 as viewed from the thickness direction Z of the first embodiment.

[0121] On the other hand, the number and arrangement pattern of the third driving connection parts 75 as the connection part 60C are different from those of the third driving connection parts 75 of the first embodiment. Specifically, the number of the switching element side connection parts 75a is smaller than the number of the switching element side connection parts 75a of the first embodiment. In FIG. 18, four switching element side connection parts 75a are provided at positions overlapping the switching element 20 in the thickness direction Z. The number of the semiconductor laser element side connection parts 75b is larger than the number of the semiconductor laser element side connection parts 75b of the first embodiment. In FIG. 18, the semiconductor laser element side connection parts 75b are provided at positions overlapping the semiconductor laser element 10A in the thickness direction Z and at positions overlapping the semiconductor laser element 10B in the thickness direction Z, respectively.

[0122] Thus, according to the semiconductor laser device 1A including a plurality of semiconductor laser elements 10 as shown in FIGS. 17 and 18, the intensity of the laser light emitted from the semiconductor laser device 1A becomes high.

[0123] · In the modification example of FIG. 17, as shown in FIG. 19, an element connection member 87 for connecting the anode electrode 11 of the semiconductor laser element 10A and the anode electrode 11 of the semiconductor laser element 10B may be added. The element connection member 87 is, for example, a wire made of a metal such as Au (gold), Cu (copper), or Al (aluminum). The element connection member 87 is formed by wire bonding. The number of the element connection members 87 is not particularly limited, but is one in FIG. 19. The wire diameter of the element connection member 87 is not particularly limited, but is equal to, for example, the wire diameters of the laser connection members 85 and 86. Here, if the difference between the wire diameter of the element connection member 87 and the wire diameters of the laser connection members 85 and 86 is within 5% of the wire diameters of the laser connection members 85 and 86, it can be said that the wire diameter of the element connection member 87 is equal to the wire diameters of the laser connection members 85 and 86. Note that the configuration and shape of the back-side conductive portion 60B of the semiconductor laser device 1A shown in FIG. 19 are the same as those of the back-side conductive portion 60B of the semiconductor laser device 1A in the modification example shown in FIG. 18.

[0124] According to the semiconductor laser device 1A shown in FIG. 19, since the anode electrode 11 of the semiconductor laser element 10A and the anode electrode 11 of the semiconductor laser element 10B are connected by the element connection member 87, the fourth drive conductive portions 64A and 64B are electrically connected via the semiconductor laser elements 10A and 10B. As a result, when connecting the positive electrode of the power supply 110 to the semiconductor laser device 1A, it is only necessary to connect the positive electrode of the power supply 110 to the fourth drive conductive portion 64A, so that the connection structure between the power supply 110 and the semiconductor laser device 1A can be simplified.

[0125] · In the modification example of FIG. 17, the semiconductor laser device 1A may include a semiconductor laser element having a plurality of semiconductor light emitting layers 14 arranged side by side in the horizontal direction X and one electrode connecting the plurality of semiconductor light emitting layers 14. In one example, as shown in FIG. 20, the semiconductor laser device 1A may include a semiconductor laser element 10C having two semiconductor light emitting layers 14A and 14B (see FIG. 21). As shown in FIG. 20, the shape of the semiconductor laser element 10C in plan view is a rectangular shape in which the horizontal direction X is the long side direction and the vertical direction Y is the short side direction. The size of the semiconductor laser element 10C in the horizontal direction X is larger than the size of the semiconductor laser element 10 in the first embodiment in the horizontal direction X.

[0126] As shown in FIG. 21, the semiconductor laser element 10C includes a substrate 13 and semiconductor light emitting layers 14A and 14B arranged side by side in the horizontal direction X on the substrate 13. The semiconductor light emitting layers 14A and 14B have the same configuration as the semiconductor light emitting layer 14 in the first embodiment. The insulating layer 16 covers both of the semiconductor light emitting layers 14A and 14B. A contact opening 16b is formed at the top of the semiconductor light emitting layer 14A in the insulating layer 16, and a contact opening 16c is formed at the top of the semiconductor light emitting layer 14B in the insulating layer 16. The contact opening 16b exposes the semiconductor light emitting layer 14A, and the contact opening 16c exposes the semiconductor light emitting layer 14B. Contact electrodes 17 are formed in the contact openings 16b and 16c. The contact electrode 17 is formed on the insulating layer 16 from the contact opening 16b to the contact opening 16c. Therefore, the contact electrode 17 is electrically connected to both of the semiconductor light emitting layers 14A and 14B. That is, the contact electrode 17 corresponds to one electrode connecting the plurality of semiconductor light emitting layers 14. An anode electrode 11 (see FIG. 20) is formed on the contact electrode 17.

[0127] According to the semiconductor laser device 1A shown in FIGS. 20 and 21, compared with the semiconductor laser device 1A shown in FIGS. 17 to 19, the semiconductor laser element becomes one chip, and a connecting member for connecting the anode electrodes of the two semiconductor laser elements is also unnecessary, so that the configuration of the semiconductor laser device 1A can be simplified.

[0128] · The configuration of the back surface side conductive portion 60B can be arbitrarily changed. In one example, the back surface side conductive portion 60B may integrate the conductive portion 66B for the first terminal and the conductive portion 68 for the third terminal. For example, as shown in FIG. 22, the semiconductor laser device 1A may include a conductive portion 78 for terminals in which the conductive portion 66B for the first terminal, the conductive portion 68 for the third terminal, and the conductive portion 69B for the fourth terminal (both shown in FIG. 3) are integrated. In this case, the shape of the conductive portion 78 for terminals in a plan view is a rectangular shape in which the lateral direction X is the long side direction and the longitudinal direction Y is the short side direction. Note that the shape of the conductive portion 78 for terminals in a plan view can be arbitrarily changed. For example, the shape of the conductive portion 78 for terminals in a plan view may be square. The area of the conductive portion 78 for terminals in a plan view is larger than the sum of the areas of the conductive portion 66B for the first terminal, the conductive portion 68 for the third terminal, and the conductive portion 69B for the fourth terminal in the plan view of the first embodiment. Therefore, the heat dissipation performance of the semiconductor laser device 1A by the conductive portion 78 for terminals is improved.

[0129] Also, since the conductive portion 78 for terminals is configured to electrically connect the conductive portion 68 for the third terminal, the conductive portion 66B for the first terminal, and the conductive portion 69B for the fourth terminal, the first driving connection portion 73B and the fourth driving connection portion 76B (both shown in FIG. 3) can be omitted respectively. Therefore, the configuration of the semiconductor laser device 1A can be simplified. Note that a first driving connection portion 73B for connecting the conductive portion 78 for terminals and the first driving conductive portion 61B, and a fourth driving connection portion 76B for connecting the conductive portion 78 for terminals and the fourth driving conductive portion 64B may be added.

[0130] · The configuration for connecting the main surface side conductive portion 60A and the back surface side conductive portion 60B is not limited to the through hole 71. For example, as shown in FIGS. 23 and 24, a side surface connection portion 60D may be provided instead of a part of the connection portion 60C. The side surface connection portion 60D is formed on the second substrate side surface 51d, the third substrate side surface 51e, and the fourth substrate side surface 51f of the substrate 51 respectively. In this case, the arrangement modes of the main surface side conductive portion 60A, the back surface side conductive portion 60B, and the substrate 51 are different.

[0131] Specifically, the arrangement configurations of the second driving conductive part 62 and the control conductive part 65, and the second terminal conductive part 67 and the control terminal conductive part 70 are different from each other. More specifically, when viewed from the lateral direction X, the second driving conductive part 62 and the control conductive part 65 each overlap the third driving conductive part 63. The second driving conductive part 62 is arranged closer to the fourth base material side surface 51f than the third driving conductive part 63 in the lateral direction X. The control conductive part 65 is arranged closer to the third base material side surface 51e than the third driving conductive part 63 in the lateral direction X. The second terminal conductive part 67 is arranged so as to overlap the second driving conductive part 62 in the thickness direction Z. The control terminal conductive part 70 is arranged so as to overlap the control conductive part 65 in the thickness direction Z. Thus, when viewed from the lateral direction X, the second terminal conductive part 67 and the control terminal conductive part 70 each overlap the third terminal conductive part 68. The second terminal conductive part 67 is arranged closer to the fourth base material side surface 51f than the third terminal conductive part 68 in the lateral direction X. The control terminal conductive part 70 is arranged closer to the third base material side surface 51e than the third terminal conductive part 68 in the lateral direction X.

[0132] In addition, the main surface side conductive part 60A and the back surface side conductive part 60B extend so as to be connected to the second base material side surface 51d, the third base material side surface 51e, and the fourth base material side surface 51f, respectively. More specifically, the first driving conductive part 61A, the fourth driving conductive part 64A, and the control conductive part 65 are each connected to the third base material side surface 51e. The first driving conductive part 61B, the second driving conductive part 62, and the fourth driving conductive part 64B are each connected to the fourth base material side surface 51f. The third driving conductive part 63 is connected to the second base material side surface 51d. Also, the first terminal conductive part 66A, the fourth terminal conductive part 69A, and the control terminal conductive part 70 are each connected to the third base material side surface 51e. The first terminal conductive part 66B, the second terminal conductive part 67, and the fourth terminal conductive part 69B are each connected to the fourth base material side surface 51f. The third terminal conductive part 68 is connected to the second base material side surface 51d.

[0133] Portions on the second substrate side surface 51d where the third driving conductive part 63 and the third terminal conductive part 68 are arranged are provided with recesses 53A and 53B. In plan view, the recesses 53A and 53B are each curved and recessed from the second substrate side surface 51d toward the first substrate side surface 51c. The recesses 53A and 53B are arranged at intervals in the lateral direction X.

[0134] The third substrate side surface 51e is provided with recesses 54A, 54B, and 54C. In plan view, the recesses 54A, 54B, and 54C are each curved and recessed from the third substrate side surface 51e toward the fourth substrate side surface 51f. The recesses 54A, 54B, and 54C are arranged at intervals in the longitudinal direction Y. The recess 54A is provided in a portion of the substrate 51 where the first driving conductive part 61A and the first terminal conductive part 66A are arranged. The recess 54B is provided in a portion of the substrate 51 where the control conductive part 65 and the control terminal conductive part 70 are arranged. The recess 54C is provided in a portion of the substrate 51 where the fourth driving conductive part 64A and the fourth terminal conductive part 69A are arranged.

[0135] The fourth substrate side surface 51f is provided with recesses 55A, 55B, and 55C. In plan view, the recesses 55A, 55B, and 55C are each curved and recessed from the fourth substrate side surface 51f toward the third substrate side surface 51e. The recesses 55A, 55B, and 55C are arranged at intervals in the longitudinal direction Y. When viewed from the lateral direction X, the recess 55A is provided at a position overlapping the recess 54A, the recess 55B is provided at a position overlapping the recess 54B, and the recess 55C is provided at a position overlapping the recess 54C. The recess 55A is provided in a portion of the substrate 51 where the first driving conductive part 61B and the first terminal conductive part 66B are arranged. The recess 55B is provided in a portion of the substrate 51 where the second driving conductive part 62 and the second terminal conductive part 67 are arranged. The recess 55C is provided in a portion of the substrate 51 where the fourth driving conductive part 64B and the fourth terminal conductive part 69B are arranged.

[0136] The recesses 53A, 53B, 54A to 54C, and 55A to 55C are each formed from the front main surface 51a to the back surface 51b of the base material 51. Also, the shapes and sizes of the recesses 53A, 53B, 54A to 54C, and 55A to 55C are equal to each other.

[0137] The side connection parts 60D are provided in each of the recesses 53A, 53B, 54A to 54C, and 55A to 55C. The side connection parts 60D are formed along the inner surfaces that respectively constitute the recesses 53A, 53B, 54A to 54C, and 55A to 55C. The side connection parts 60D include the side connection parts 76A to 76H. As shown in FIG. 25, the side connection parts 76C and 76F are each constituted by a metal film 76a. Although not shown in the drawings, the side connection parts 76A, 76B, 76D, 76E, 76G, and 76H are each constituted by a metal film 76a in the same manner as the side connection parts 76C and 76F. The end of the metal film 76a closer to the front main surface 51a of the base material 51 is connected to the front main surface side conductive part 60A, and the end of the metal film 76a closer to the back surface 51b of the base material 51 is connected to the back surface side conductive part 60B. In the present embodiment, the material constituting the metal film 76a is the same as the material constituting the front main surface side conductive part 60A and the back surface side conductive part 60B.

[0138] As shown in FIGS. 23 and 24, the side connection portion 76A is provided in the recess 53A and connects the third driving conductive portion 63 and the third terminal conductive portion 68. The side connection portion 76B is provided in the recess 53B and connects the third driving conductive portion 63 and the third terminal conductive portion 68. The side connection portion 76C is provided in the recess 54A and connects the first driving conductive portion 61A and the first terminal conductive portion 66A. The side connection portion 76D is provided in the recess 54B and connects the second driving conductive portion 62 and the second terminal conductive portion 67. The side connection portion 76E is provided in the recess 54C and connects the fourth driving conductive portion 64A and the fourth terminal conductive portion 69A. The side connection portion 76F is provided in the recess 55A and connects the first driving conductive portion 61B and the first terminal conductive portion 66B. The side connection portion 76G is provided in the recess 55B and connects the control conductive portion 65 and the control terminal conductive portion 70. The side connection portion 76H is provided in the recess 55C and connects the fourth driving conductive portion 64B and the fourth terminal conductive portion 69B.

[0139] According to this configuration, when the semiconductor laser device 1A is joined to a wiring board or the like by, for example, soldering, a solder fillet is formed on the side connection portion 60D. Therefore, the operator can confirm the joining state of the semiconductor laser device 1A by visually recognizing the solder fillet formed on the side connection portion 60D.

[0140] Further, in the semiconductor laser device 1A of the modified example shown in FIGS. 23 and 24, the first driving connection portions 73A and 73B (see FIG. 3) are omitted by providing the side connection portions 76C and 76F, the second driving connection portion 74 (see FIG. 3) is omitted by providing the side connection portion 76B, the fourth driving connection portions 76A and 76B (see FIG. 3) are omitted by providing the side connection portions 76E and 76H, and the control connection portion 77 (see FIG. 3) is omitted by providing the side connection portion 76G.

[0141] Note that at least one of the first drive connection parts 73A and 73B, the second drive connection part 74, the fourth drive connection parts 76A and 76B, and the control connection part 77 may be added to the semiconductor laser device 1A of the modification example shown in FIGS. 23 and 24.

[0142] · The number of capacitors 30A joined to the first drive conductive part 61A and the fourth drive conductive part 64A and the number of capacitors 30B joined to the first drive conductive part 61B and the fourth drive conductive part 64B can each be arbitrarily changed. A plurality of capacitors 30A and 30B may be provided respectively. Also, the number of capacitors 30A and 30B may be set according to, for example, the output of the semiconductor laser element 10.

[0143] [Second Embodiment] With reference to FIGS. 26 and 27, the semiconductor laser device 1B of the second embodiment will be described. The semiconductor laser device 1B of this embodiment is different from the semiconductor laser device 1A of the first embodiment in the configuration of the conductive part 60 and the arrangement configuration of the semiconductor laser element 10, the switching element 20, and the capacitors 30A and 30B. In this embodiment, for convenience, the same components as those in the first embodiment may be denoted by the same reference numerals and their description may be omitted.

[0144] As shown in FIG. 26, in the semiconductor laser device 1B of this embodiment, the semiconductor laser element 10 and the switching element 20 are not arranged at the center of the lateral direction X of the support substrate 50, but are arranged offset toward the fourth base material side surface 51f side from the center of the lateral direction X of the support substrate 50. Also, in the semiconductor laser device 1B of this embodiment, the capacitors 30A and 30B are not arranged on both sides of the switching element 20, but are arranged on the third base material side surface 51e side with respect to the switching element 20 in the lateral direction X. The configuration of the conductive part 60 is different from the configuration of the conductive part 60 of the first embodiment with respect to such an arrangement configuration of the semiconductor laser element 10, the switching element 20, and the capacitors 30A and 30B.

[0145] Specifically, the main surface side conductive part 60A has a first driving conductive part 61, a second driving conductive part 62, a third driving conductive part 63, a fourth driving conductive part 64, and a control conductive part 65. That is, there is one each of the first driving conductive part 61 and the fourth driving conductive part 64.

[0146] The first driving conductive part 61 is arranged in a portion of the base material 51 closer to the third base material side surface 51e in the lateral direction X. The first driving conductive part 61 is arranged in a portion of the base material 51 closer to the second base material side surface 51d in the longitudinal direction Y. That is, the first driving conductive part 61 is arranged on the base material 51 such that the central part in its longitudinal direction Y is closer to the second base material side surface 51d than the central part of the base material 51 in the longitudinal direction Y. The shape of the first driving conductive part 61 in plan view is a rectangular shape with the longitudinal direction Y as the long side direction and the lateral direction X as the short side direction.

[0147] The fourth driving conductive part 64 is arranged in a portion of the base material 51 closer to the third base material side surface 51e in the lateral direction X and in a portion of the base material 51 closer to the first base material side surface 51c in the longitudinal direction Y. The shape of the fourth driving conductive part 64 in plan view is a rectangular shape with the lateral direction X as the long side direction and the longitudinal direction Y as the short side direction. When viewed from the longitudinal direction Y, the fourth driving conductive part 64 overlaps with the first driving conductive part 61. The size of the fourth driving conductive part 64 in the lateral direction X is larger than the size of the first driving conductive part 61 in the lateral direction X.

[0148] Capacitors 30A and 30B are joined to the first driving conductive part 61 and the fourth driving conductive part 64 by a conductive bonding material such as Ag paste or solder. The capacitors 30A and 30B are arranged adjacent to each other with a space in the lateral direction X in a state aligned in the longitudinal direction Y. Each first terminal 31 of the capacitors 30A and 30B is arranged at an end of the first driving conductive part 61 closer to the fourth driving conductive part 64 in the longitudinal direction Y. Each second terminal 32 of the capacitors 30A and 30B is arranged at an end of the fourth driving conductive part 64 closer to the first driving conductive part 61 in the longitudinal direction Y.

[0149] The third driving conductive part 63 is arranged at a portion of the base material 51 closer to the fourth base material side surface 51f in the lateral direction X. The third driving conductive part 63 is arranged at a portion of the base material 51 closer to the first base material side surface 51c in the longitudinal direction Y. That is, the third driving conductive part 63 is arranged on the base material 51 such that the central part in its longitudinal direction Y is located closer to the first base material side surface 51c than the central part of the base material 51 in the longitudinal direction Y. The third driving conductive part 63 can be divided into a switching element mounting part 63a and a semiconductor laser element mounting part 63b. The switching element mounting part 63a and the semiconductor laser element mounting part 63b are arranged side by side in the longitudinal direction Y. The semiconductor laser element mounting part 63b is a portion of the third driving conductive part 63 closer to the first base material side surface 51c in the longitudinal direction Y. The shape of the semiconductor laser element mounting part 63b in plan view is a rectangular shape in which the lateral direction X is the long side direction and the longitudinal direction Y is the short side direction. The switching element mounting part 63a is closer to the second base material side surface 51d than the semiconductor laser element mounting part 63b. The shape of the switching element mounting part 63a in plan view is a rectangular shape in which the longitudinal direction Y is the long side direction and the lateral direction X is the short side direction. The size of the switching element mounting part 63a in the lateral direction X is larger than the size of the semiconductor laser element mounting part 63b in the lateral direction X. The semiconductor laser element mounting part 63b is located closer to the fourth base material side surface 51f than the switching element mounting part 63a. For this reason, a notch part 63c is formed adjacent to the lateral direction X of the semiconductor laser element mounting part 63b in the third driving conductive part 63. An end portion of the fourth driving conductive part 64 closer to the fourth base material side surface 51f enters a part of the notch part 63c.

[0150] The semiconductor laser element 10 is joined to the semiconductor laser element mounting portion 63b by a conductive bonding material such as Ag paste or solder. The semiconductor laser element 10 is disposed at an end portion of the semiconductor laser element mounting portion 63b closer to the fourth driving conductive portion 64 in the lateral direction X. The semiconductor laser element 10 is disposed such that its cathode electrode 12 (not shown in FIG. 26) faces the semiconductor laser element mounting portion 63b side. For this reason, the cathode electrode 12 is electrically connected to the semiconductor laser element mounting portion 63b (third driving conductive portion 63) via the conductive bonding material. The anode electrode 11 of the semiconductor laser element 10 faces the side opposite to the third driving conductive portion 63 in the thickness direction Z. The anode electrode 11 and the fourth driving conductive portion 64 are electrically connected by a plurality (four in this embodiment) of laser connection members 85. The four laser connection members 85 are arranged at intervals in the longitudinal direction Y. Each laser connection member 85 has a first end portion 85a and a second end portion 85b. The first end portion 85a is joined to the anode electrode 11. Specifically, the first end portion 85a is joined to the central portion of the anode electrode 11 in the lateral direction X. The second end portion 85b is joined to the fourth driving conductive portion 64. Specifically, the second end portion 85b is joined to an end portion of the fourth driving conductive portion 64 closer to the semiconductor laser element mounting portion 63b.

[0151] The switching element 20 is joined to the switching element mounting portion 63a by a conductive bonding material. The switching element 20 is joined to the switching element mounting portion 63a in a state where its drain electrode 21 (not shown in FIG. 26) faces the third driving conductive portion 63 side in the thickness direction Z. For this reason, the drain electrode 21 is electrically connected to the third driving conductive portion 63 via the conductive bonding material. In this way, the drain electrode 21 and the cathode electrode 12 of the semiconductor laser element 10 are electrically connected via the third driving conductive portion 63.

[0152] The switching element 20 of this embodiment has a shape and arrangement of the source electrode 22 and the gate electrode 23 that are different from those of the source electrode 22 and the gate electrode 23 of the switching element 20 of the first embodiment. Specifically, a notch 25 is formed near the second base material side surface 51d and near the fourth base material side surface 51f of the source electrode 22. The gate electrode 23 is formed in the notch 25. Thus, the gate electrode 23 is located at an end near the second base material side surface 51d and near the fourth base material side surface 51f of the element main surface 24a of the switching element 20.

[0153] The second driving conductive part 62 and the control conductive part 65 are each arranged closer to the second base material side surface 51d than the third driving conductive part 63 in the vertical direction Y. The second driving conductive part 62 and the control conductive part 65 are each arranged closer to the fourth base material side surface 51f than the first driving conductive part 61 in the horizontal direction X. The second driving conductive part 62 and the control conductive part 65 are arranged at intervals in the horizontal direction X in a state of being aligned in the vertical direction Y.

[0154] The source electrode 22 and the first driving conductive part 61 are electrically connected by a plurality (three in this embodiment) of first driving connection members 81. The three first driving connection members 81 are arranged at intervals in the vertical direction Y. The source electrode 22 and the second driving conductive part 62 are electrically connected by a second driving connection member 83. The gate electrode 23 and the control conductive part 65 are electrically connected by a control connection member 84. Note that the number of the first driving connection members 81 can be arbitrarily changed. For example, the number of the first driving connection members 81 may be set according to the output of the semiconductor laser element 10.

[0155] As shown in FIG. 27, the back surface side conductive part 60B has the first terminal conductive parts 66A, 66B, the second terminal conductive part 67, the third terminal conductive parts 68A, 68B, the fourth terminal conductive part 69, and the control terminal conductive part 70.

[0156] The conductive portions 66A and 66B for the first terminal are arranged at intervals in the longitudinal direction Y. The conductive portions 66A and 66B for the first terminal are arranged at positions overlapping the first driving conductive portion 61 in the thickness direction Z. The shape of the conductive portion 66A for the first terminal in plan view is a rectangular shape in which the longitudinal direction Y is the long side direction and the lateral direction X is the short side direction. The conductive portion 66B for the first terminal is arranged closer to the side surface 51d of the second base material than the conductive portion 66A for the first terminal. The shape of the conductive portion 66B for the first terminal in plan view is a rectangular shape in which the lateral direction X is the long side direction and the longitudinal direction Y is the short side direction. The size of the conductive portion 66B for the first terminal in the longitudinal direction Y is smaller than the size of the conductive portion 66A for the first terminal in the longitudinal direction Y.

[0157] The conductive portion 67 for the second terminal is arranged at a position overlapping the second driving conductive portion 62 in the thickness direction Z. The conductive portion 67 for the second terminal is arranged at intervals in the lateral direction X in a state aligned with the conductive portion 66B for the first terminal in the longitudinal direction Y.

[0158] The conductive portions 68A and 68B for the third terminal are arranged at intervals in the longitudinal direction Y. The conductive portions 68A and 68B for the third terminal are arranged at positions overlapping the third driving conductive portion 63 in the thickness direction Z. The shape of the conductive portion 68A for the third terminal in plan view is a rectangular shape in which the longitudinal direction Y is the long side direction and the lateral direction X is the short side direction. The shape of the conductive portion 68B for the third terminal in plan view is a rectangular shape in which the lateral direction X is the long side direction and the longitudinal direction Y is the short side direction. The size of the conductive portion 68B for the third terminal in the longitudinal direction Y is smaller than the size of the conductive portion 68A for the third terminal in the longitudinal direction Y.

[0159] The conductive portion 69 for the fourth terminal is arranged at an interval in the lateral direction X while being aligned with the conductive portion 68B for the third terminal in the longitudinal direction Y. The conductive portion 69 for the fourth terminal is arranged closer to the side surface 51e of the third base material than the conductive portion 68B for the third terminal. The conductive portion 69 for the fourth terminal is arranged at an interval in the longitudinal direction Y from the conductive portion 66A for the first terminal while being aligned with the conductive portions 66A and 66B for the first terminal in the lateral direction X. The conductive portion 69 for the fourth terminal is arranged on the side of the side surface 51c of the first base material with respect to the conductive portion 66A for the first terminal in the longitudinal direction Y. In the thickness direction Z, the conductive portion 69 for the fourth terminal is arranged at a position overlapping with the conductive portion 64 for the fourth drive.

[0160] The conductive portion 70 for the control terminal is arranged at an interval in the lateral direction X while being aligned with the conductive portion 67 for the second terminal in the longitudinal direction Y. The conductive portion 70 for the control terminal is arranged closer to the side surface 51f of the fourth base material than the conductive portion 67 for the second terminal in the lateral direction X. In the thickness direction Z, the conductive portion 70 for the control terminal is arranged at a position overlapping with the conductive portion 65 for control.

[0161] As shown in FIGS. 26 and 27, the connection portion 60C includes a first drive connection portion 73A, 73B, a second drive connection portion 74, a third drive connection portion 75A, 75B, a fourth drive connection portion 76, and a control connection portion 77. Each of the connection portions 73A, 73B, 74, 75A, 75B, 76, 77 has a through hole 71 and a conductor portion 72 (not shown in FIGS. 26 and 27) as in the first embodiment.

[0162] The first drive connection portion 73A connects the first drive conductive portion 61 and the first terminal conductive portion 66A. The number of the first drive connection portions 73A is not particularly limited, but in the present embodiment, four first drive connection portions 73A are provided.

[0163] The first drive connection portion 73B connects the first drive conductive portion 61 and the first terminal conductive portion 66B. The number of the first drive connection portions 73B is not particularly limited, but in the present embodiment, two first drive connection portions 73B are provided.

[0164] The second drive connection part 74 connects the second drive conductive part 62 and the second terminal conductive part 67. The third drive connection part 75A connects the switching element mounting part 63a of the third drive conductive part 63 and the third terminal conductive part 68A. The number of the third drive connection parts 75A is not particularly limited, but in this embodiment, nine third drive connection parts 75A are provided.

[0165] The third drive connection part 75B connects the semiconductor laser element mounting part 63b of the third drive conductive part 63 and the third terminal conductive part 68B. The number of the third drive connection parts 75B is not particularly limited, but in this embodiment, two third drive connection parts 75B are provided. One of the third drive connection parts 75B is provided at a position overlapping the semiconductor laser element 10 in the thickness direction Z.

[0166] (Operation) Next, the operation of the semiconductor laser device 1B of this embodiment will be described. When applying the semiconductor laser device 1B to the laser system 100, the positive electrode 111 of the power supply 110 is connected to the fourth driving conductive part 64, and the negative electrode 112 of the power supply 110 is connected to the first driving conductive part 61. Also, the output electrode 141 of the driver circuit 140 is connected to the control conductive part 65, and the input electrode 142 is connected to the second driving conductive part 62. In this way, when supplying current from the power supply 110 to the semiconductor laser device 1B, when the switching element 20 is in the off state, the capacitors 30A and 30B store electricity, and when the switching element 20 is in the on state, the charges stored in the capacitors 30A and 30B flow to the semiconductor laser element 10 and the switching element 20. As a result, current flows through the semiconductor laser element 10 and the switching element 20. Then, current flows from the source electrode 22 of the switching element 20 to the negative electrode of the power supply 110 via the first driving conductive part 61. More specifically, a driving loop is formed in which current flows through the semiconductor laser element 10 and the switching element 20 based on the charges stored in the capacitors 30A and 30B respectively. Specifically, in the driving loop, current flows in the order of the second terminal 32 of the capacitors 30A and 30B, the fourth driving conductive part 64, the laser connection member 85, the anode electrode 11 of the semiconductor laser element 10, the cathode electrode 12, the third driving conductive part 63, the drain electrode 21 of the switching element 20, the source electrode 22, the first driving connection member 81, and the first terminal 31 of the capacitors 30A and 30B.

[0167] When a voltage Vg is generated between the input electrode 142 and the output electrode 141 of the driver circuit 140, a voltage Vgs, which is the voltage between the gate and the source, is applied to the gate electrode 23 of the switching element 20. Specifically, between the driver circuit 140 and the switching element 20, a control loop is formed in which current flows in the order of the output electrode 141 of the driver circuit 140, the conductive part 70 for the control terminal, the communication part 77 for control, the conductive part 65 for control, the connection member 84 for control, the gate electrode 23, the source electrode 22, the connection member 83 for the second drive, the conductive part 62 for the second drive, the communication part 74 for the second drive, the conductive part 67 for the second terminal, and the input electrode 142. Thus, since the input electrode 142 and the source electrode 22 are electrically connected independently of the first drive loop and the second drive loop, the voltage Vgs applied to the gate electrode 23 is generated based on the potential of the source electrode 22 connected to the input electrode 142.

[0168] In this way, since the drive loop of the current between the power supply 110, the semiconductor laser element 10, and the switching element 20 and the control loop of the current between the driver circuit 140 and the switching element 20 are formed separately, the voltage Vg applied to the input electrode 142 of the driver circuit 140 and the voltage Vgs applied to the gate electrode 23 are less likely to be affected by the drive loop respectively. Therefore, according to the semiconductor laser device 1B of the present embodiment, the same effects as those of the first embodiment can be obtained.

[0169] [Modification Example of the Second Embodiment] The semiconductor laser device 1B of the second embodiment can be modified as follows, for example. The following modification examples can be combined as long as no technical contradiction occurs. In the following modification examples, parts common to the second embodiment are denoted by the same reference numerals as those in the second embodiment, and the description thereof is omitted.

[0170] ·The second driving conductive part 62 and the control conductive part 65 may be interchanged. Accordingly, the second terminal conductive part 67 and the control terminal conductive part 70 are also interchanged in the same manner. Further, the position of the notch 25 of the source electrode 22 of the switching element 20 is changed to be closer to the second base material side surface 51d and closer to the third base material side surface 51e of the source electrode 22. In this case, the gate electrode 23 is located closer to the second base material side surface 51d and closer to the third base material side surface 51e of the element main surface 24a of the switching element 20.

[0171] ·Instead of the first terminal conductive parts 66A and 66B, a terminal conductive part in which the first terminal conductive part 66A and the first terminal conductive part 66B are integrated may be formed on the back surface 51b of the base material. ·Instead of the third terminal conductive parts 68A and 68B, a terminal conductive part in which the third terminal conductive part 68A and the third terminal conductive part 68B are integrated may be formed on the back surface 51b of the base material.

[0172] [Third Embodiment] Referring to FIGS. 28 and 29, the semiconductor laser device 1C of the third embodiment will be described. The semiconductor laser device 1C of the present embodiment mainly differs from the semiconductor laser device 1B of the second embodiment in the shape of a part of the conductive part 60 and the arrangement configuration of the electrodes of the switching element 20A. In the present embodiment, for convenience, the same components as those in the second embodiment are denoted by the same reference numerals, and the description thereof may be omitted.

[0173] As shown in FIG. 28, the size of the first driving conductive part 61 in the vertical direction Y is smaller than the size of the first driving conductive part 61 in the vertical direction Y of the second embodiment. The second driving conductive part 62 is arranged so as to overlap the first driving conductive part 61 and the end portion closer to the first driving conductive part 61 among the third driving conductive parts 63 when viewed from the vertical direction Y. The size of the second driving conductive part 62 in the horizontal direction X is larger than the size of the second driving conductive part 62 in the horizontal direction X of the second embodiment. The size of the control conductive part 65 in the horizontal direction X is larger than the size of the control conductive part 65 in the horizontal direction X of the second embodiment.

[0174] As shown in Fig. 29, the conductive part 67 for the second terminal is arranged so as to overlap the conductive part 66A for the first terminal and the end part of the conductive part 68 for the third terminal closer to the conductive part 66A for the first terminal when viewed from the longitudinal direction Y. The size of the conductive part 67 for the second terminal in the lateral direction X is larger than the size of the conductive part 67 for the second terminal in the second embodiment in the lateral direction X. The size of the conductive part 70 for the control terminal in the lateral direction X is larger than the size of the conductive part 70 for the control terminal in the second embodiment in the lateral direction X.

[0175] As shown in Figs. 28 and 29, in this embodiment, the conductive part 66B for the first terminal and the connection part 73B for the first drive are omitted. Also, three connection parts 74 for the second drive are provided, and two connection parts 77 for control are provided. The three connection parts 74 for the second drive are arranged at intervals in the lateral direction X in a state of being aligned in the longitudinal direction Y. The two connection parts 77 for control are arranged at intervals in the lateral direction X in a state of being aligned in the longitudinal direction Y.

[0176] As shown in Fig. 28, the switching element 20A is joined to the switching element mounting part 63a of the conductive part 63 for the third drive by a joining material. The joining material in this embodiment is not limited to a conductive joining material, and an insulating joining material can also be used. The shape of the switching element 20A in plan view is, for example, a rectangular shape in which the lateral direction X is the long side direction and the longitudinal direction Y is the short side direction.

[0177] For the switching element 20A, a transistor made of, for example, Si (silicon), SiC (silicon carbide), or GaN (gallium nitride) is used. When the switching element 20A is made of SiC, it is suitable for speeding up switching. In this embodiment, the switching element 20A is an N-type MOSFET made of Si.

[0178] The switching element 20A has an element main surface 24a that faces the same direction as the base material main surface 51a of the base material 51 of the support substrate 50 in the thickness direction Z. On the element main surface 24a, a drain electrode 21, a source electrode 22, and a gate electrode 23 are respectively formed. That is, in the present embodiment, the drain electrode 21 is not formed on the back surface of the element (not shown). Thus, the switching element 20A of the present embodiment is a so-called lateral structure transistor.

[0179] The drain electrode 21, the source electrode 22, and the gate electrode 23 are arranged at intervals in the vertical direction Y. The drain electrode 21 is formed in a portion of the element main surface 24a closer to the semiconductor laser element 10 in the vertical direction Y. The drain electrode 21 is electrically connected to the third drive conductive portion 63 by the third drive connection member 88. In the present embodiment, three third drive connection members 88 connect the drain electrode 21 and the third drive conductive portion 63. The three third drive connection members 88 are arranged at intervals in the horizontal direction X. The third drive connection member 88 has a first end portion 88a and a second end portion 88b.

[0180] The first end portion 88a of each third drive connection member 88 is connected to the drain electrode 21. These first end portions 88a are arranged at intervals in the horizontal direction X in a state of being aligned in the vertical direction Y. The second end portion 88b of each third drive connection member 88 is arranged at an end of the switching element mounting portion 63a of the third drive conductive portion 63 closer to the semiconductor laser element mounting portion 63b in the vertical direction Y. These second end portions 88b are arranged at intervals in the horizontal direction X in a state of being aligned in the vertical direction Y.

[0181] The source electrode 22 and the gate electrode 23 are arranged at intervals in the horizontal direction X in a state of being aligned in the vertical direction Y. The source electrode 22 is arranged on the first drive conductive portion 61 side with respect to the gate electrode 23 in the horizontal direction X.

[0182] The source electrode 22 is electrically connected to the first driving conductive portion 61 by the first driving connection member 81. In the present embodiment, two first driving connection members 81 connect the source electrode 22 and the first driving conductive portion 61. Further, the source electrode 22 is electrically connected to the second driving conductive portion 62 by the second driving connection member 83. In the present embodiment, one second driving connection member 83 connects the source electrode 22 and the second driving conductive portion 62.

[0183] Of the two first driving connection members 81, the first ends 81a connected to the source electrode 22 are respectively arranged closer to the gate electrode 23 than the first end 83a of the second driving connection member 83 connected to the source electrode 22. In other words, the first end 83a is arranged closer to the first driving conductive portion 61 (second driving conductive portion 62) than the first end 81a.

[0184] Of the two first driving connection members 81, the second ends 81b connected to the first driving conductive portion 61 are arranged between the first terminals 31 of the capacitors 30A and 30B and the first driving connection portion 73 in the longitudinal direction Y. Of the second driving connection members 83, the second ends 83b connected to the second driving conductive portion 62 are arranged at the end of the second driving conductive portion 62 closer to the control conductive portion 65 in the lateral direction X. As shown in FIG. 28, the length of the second driving connection member 83 is shorter than the length of the first driving connection member 81. Since the second driving connection member 83 can be formed shorter, the inductance caused by the second driving connection member 83 can be reduced. Further, according to the semiconductor laser device 1C of the present embodiment, the same effects as those of the second embodiment can be obtained.

[0185] [Modification Example of the Third Embodiment] The semiconductor laser device 1C of the third embodiment can be modified as follows, for example. The following modification examples can be combined as long as no technical contradiction occurs. In the following modification examples, parts common to the first embodiment and the second embodiment are denoted by the same reference numerals as those in the first embodiment and the second embodiment, and the description thereof is omitted.

[0186] · As shown in Fig. 30, the switching element mounting portion 63a and the semiconductor laser element mounting portion 63b of the third driving conductive portion 63 may be arranged to be separated from each other in the vertical direction Y. In this case, the second end portion 88b of the third driving connection member 88 is arranged in the semiconductor laser element mounting portion 63b. Thereby, the cathode electrode 12 (not shown in Fig. 30) of the semiconductor laser element 10 and the drain electrode 21 of the switching element 20A are electrically connected.

[0187] · The semiconductor laser device 1C of the third embodiment is configured such that the switching element 20 of the semiconductor laser device 1B is replaced with the switching element 20A on the premise of the configuration of the semiconductor laser device 1B of the second embodiment, but is not limited thereto. As shown in Fig. 31, the semiconductor laser device 1C of the third embodiment may be configured such that the switching element 20 of the semiconductor laser device 1A of the first embodiment is replaced with the switching element 20A on the premise of the configuration of the semiconductor laser device 1A of the first embodiment. The switching element 20A of the semiconductor laser device 1C in Fig. 31 has a drain electrode 21, a first source electrode 22A, a second source electrode 22B, and a gate electrode 23 formed on the element main surface 24a.

[0188] The drain electrode 21, the first source electrode 22A, the second source electrode 22B, and the gate electrode 23 are arranged at intervals in the vertical direction Y. The drain electrode 21 is formed in a portion of the element main surface 24a closer to the semiconductor laser element 10 in the vertical direction Y. The drain electrode 21 is electrically connected to the third driving conductive portion 63 by the third driving connection member 88. In FIG. 31, three third driving connection members 88 connect the drain electrode 21 and the third driving conductive portion 63. The three third driving connection members 88 are arranged at intervals in the horizontal direction X. The first end portion 88a of each third driving connection member 88 is connected to the drain electrode 21. These first end portions 88a are arranged at intervals in the horizontal direction X in a state of being aligned in the vertical direction Y. The second end portion 88b of each third driving connection member 88 is arranged at an end of the switching element mounting portion 63a of the third driving conductive portion 63 closer to the semiconductor laser element mounting portion 63b in the vertical direction Y. These second end portions 88b are arranged at intervals in the horizontal direction X in a state of being aligned in the vertical direction Y.

[0189] The first source electrode 22A, the second source electrode 22B, and the gate electrode 23 are arranged at intervals in the horizontal direction X in a state of being aligned in the vertical direction Y. The gate electrode 23 is arranged between the first source electrode 22A and the second source electrode 22B in the horizontal direction X. The first source electrode 22A is arranged on the first driving conductive portion 61A side with respect to the gate electrode 23. The second source electrode 22B is arranged on the first driving conductive portion 61B side with respect to the gate electrode 23.

[0190] The first source electrode 22A is electrically connected to the first driving conductive portion 61A by the first driving connection member 81. The second source electrode 22B is electrically connected to the first driving conductive portion 61B by the first driving connection member 82 and is electrically connected to the second driving conductive portion 62 by the second driving connection member 83. The second end portion 83b of the second driving connection member 83 is disposed at a portion of the second driving conductive portion 62 that overlaps the second source electrode 22B when viewed from the longitudinal direction Y. Therefore, the length of the second driving connection member 83 can be shortened. The gate electrode 23 is connected to the control conductive portion 65 by the control connection member 84. Even with such a configuration, since the first driving connection members 81 and 82 and the second driving connection member 83 are formed separately, the same effects as those of the first embodiment can be obtained.

[0191] · In the semiconductor laser device 1C of FIG. 31, the configuration of the source electrode of the switching element 20A can be changed to the configuration of the source electrode of the switching element 20A shown in FIG. 32. Specifically, the switching element 20A of the semiconductor laser device 1C in FIG. 32 has, as a source electrode, a first source electrode 22A, a second source electrode 22B, and a third source electrode 22C. Each of the source electrodes 22A to 22C and the gate electrode 23 is disposed at an end portion of the element main surface 24a of the switching element 20A closer to the second base material side surface 51d in the longitudinal direction Y. Each of the source electrodes 22A to 22C and the gate electrode 23 is arranged at intervals in the lateral direction X in a state aligned in the longitudinal direction Y.

[0192] The first source electrode 22A is disposed closer to the first driving conductive portion 61A than the source electrodes 22B and 22C and the gate electrode 23 in the lateral direction X. The second source electrode 22B is disposed closer to the first driving conductive portion 61B than the source electrodes 22A and 22C and the gate electrode 23 in the lateral direction X. Thus, the third source electrode 22C and the gate electrode 23 are disposed between the first source electrode 22A and the second source electrode 22B in the lateral direction X. The third source electrode 22C is disposed closer to the second source electrode 22B side than the gate electrode 23.

[0193] The first source electrode 22A is connected to the first driving conductive part 61A by the first driving connection member 81. The second source electrode 22B is connected to the first driving conductive part 61B by the first driving connection member 82. The third source electrode 22C is connected to the second driving conductive part 62 by the second driving connection member 83. The second end 83b of the second driving connection member 83 is arranged at an end of the second driving conductive part 62 closer to the control conductive part 65 in the lateral direction X. Thereby, since the positions of the third source electrode 22C and the second end 83b approach each other in the lateral direction X, the length of the second driving connection member 83 can be shortened. The gate electrode 23 is connected to the control conductive part 65 by the control connection member 84. The second end 84b of the control connection member 84 is connected to an end of the control conductive part 65 closer to the second driving conductive part 62 in the lateral direction X. Thereby, since the positions of the gate electrode 23 and the second end 84b approach each other in the lateral direction X, the length of the control connection member 84 can be shortened. According to the semiconductor laser device 1C of FIG. 32, the same effects as those of the first embodiment can be obtained.

[0194] ·In the semiconductor laser devices 1C of FIGS. 31 and 32, the shape of the third driving conductive part 63 can be arbitrarily changed. In one example, the switching element mounting part 63a and the semiconductor laser element mounting part 63b of the third driving conductive part 63 may be arranged to be separated from each other in the longitudinal direction Y. In this case, the second end 88b of the third driving connection member 88 is arranged at the semiconductor laser element mounting part 63b. Thereby, the cathode electrode 12 of the semiconductor laser element 10 and the drain electrode 21 of the switching element 20A are electrically connected.

[0195] [Fourth Embodiment] With reference to FIGS. 33 and 34, the semiconductor laser device 1D of the fourth embodiment will be described. The semiconductor laser device 1D of the present embodiment is different from the semiconductor laser device 1A of the first embodiment in that a driver circuit 140 is incorporated therein. In the present embodiment, for convenience, the same components as those in the first embodiment may be denoted by the same reference numerals, and the description thereof may be omitted.

[0196] As shown in FIG. 33, the shape of the base material 51 of the support substrate 50 in the present embodiment in a plan view is a rectangular shape in which the longitudinal direction Y is the long side direction and the lateral direction X is the short side direction. In the present embodiment, the first driving conductive parts 61A and 61B and the third driving conductive part 63 are arranged closer to the first base material side surface 51c of the base material 51 in the longitudinal direction Y. That is, the central parts of the first driving conductive parts 61A and 61B and the third driving conductive part 63 in the longitudinal direction Y are located closer to the first base material side surface 51c than the central part of the base material 51 in the longitudinal direction Y. Further, in the present embodiment, the conductive part 60 has a configuration in which the second driving conductive part 62 and the control conductive part 65 (both refer to FIG. 2) are omitted from the main surface side conductive part 60A, and the second terminal conductive part 67 and the control terminal conductive part 70 (both refer to FIG. 3) are omitted from the back surface side conductive part 60B.

[0197] In a portion of the base material main surface 51a of the base material 51 closer to the second base material side surface 51d than the first driving conductive parts 61A and 61B and the third driving conductive part 63, as the main surface side conductive part 60A, a driver circuit mounting part 150, a first power supply conductive part 151, a second power supply conductive part 152, a signal conductive part 153, and a reference voltage conductive part 154 are formed.

[0198] The driver circuit mounting part 150 is arranged at a position overlapping the third driving conductive part 63 when viewed from the longitudinal direction Y. The shape of the driver circuit mounting part 150 in a plan view is a rectangular shape in which the lateral direction X is the long side direction and the longitudinal direction Y is the short side direction. On both sides of the driver circuit mounting part 150 in the lateral direction X, the first power supply conductive part 151, the second power supply conductive part 152, the signal conductive part 153, and the reference voltage conductive part 154 are arranged. More specifically, on the third base material side surface 51e side with respect to the driver circuit mounting part 150 in the lateral direction X, the first power supply conductive part 151 and the second power supply conductive part 152 are arranged, and on the fourth base material side surface 51f side with respect to the driver circuit mounting part 150, the signal conductive part 153 and the reference voltage conductive part 154 are arranged.

[0199] The first power supply conductive part 151 and the second power supply conductive part 152 are arranged at intervals in the vertical direction Y in a state of being aligned in the horizontal direction X. When viewed from the vertical direction Y, the first power supply conductive part 151 and the second power supply conductive part 152 are respectively arranged at positions overlapping with the first drive conductive part 61A. The first power supply conductive part 151 is arranged on the first drive conductive part 61A side with respect to the second power supply conductive part 152 in the vertical direction Y.

[0200] The signal conductive part 153 and the reference voltage conductive part 154 are arranged at intervals in the vertical direction Y in a state of being aligned in the horizontal direction X. When viewed from the vertical direction Y, the signal conductive part 153 and the reference voltage conductive part 154 are arranged at intervals in the vertical direction Y in a state of being aligned in the horizontal direction X. When viewed from the vertical direction Y, the signal conductive part 153 and the reference voltage conductive part 154 are respectively arranged at positions overlapping with the first drive conductive part 61B. The signal conductive part 153 is arranged on the first drive conductive part 61B side with respect to the reference voltage conductive part 154 in the vertical direction Y.

[0201] The shapes of the first power supply conductive part 151, the second power supply conductive part 152, the signal conductive part 153, and the reference voltage conductive part 154 in plan view are each square. Note that the shapes of the first power supply conductive part 151, the second power supply conductive part 152, the signal conductive part 153, and the reference voltage conductive part 154 in plan view can each be arbitrarily changed. In one example, the shapes of the first power supply conductive part 151, the second power supply conductive part 152, the signal conductive part 153, and the reference voltage conductive part 154 in plan view may be rectangular with one of the vertical direction Y and the horizontal direction X being the long side direction and the other being the short side direction. At least one of the shapes of the first power supply conductive part 151, the second power supply conductive part 152, the signal conductive part 153, and the reference voltage conductive part 154 in plan view may be different from the other shapes.

[0202] A driver circuit 140 is mounted on the driver circuit mounting section 150. In the present embodiment, the driver circuit 140 is configured as a chip in which electronic components such as transistors constituting the driver circuit 140 are sealed with a sealing member 143. In the present embodiment, the sealing member 143 is configured to cover the entire electronic component with a resin material, but the specific configuration of the sealing member 143 is not particularly limited. The shape of the driver circuit 140 in plan view is a rectangular shape in which the lateral direction X is the long side direction and the longitudinal direction Y is the short side direction.

[0203] The sealing member 143 has a sealing front surface 143a and a sealing back surface (not shown) facing opposite sides in the thickness direction Z. The sealing front surface 143a faces the same direction as the element front surface 24a of the switching element 20 in the thickness direction Z. The sealing back surface faces the same direction as the element back surface 24b of the switching element 20 in the thickness direction Z. A plurality of electrodes 144 are exposed on the sealing front surface 143a. The plurality of electrodes 144 include a first power supply electrode 144a, a second power supply electrode 144b, an output electrode 144c, an input electrode 144d, a signal electrode 144e, and a reference voltage output electrode 144f.

[0204] The first power supply electrode 144a is an electrode electrically connected to the positive electrode of a control power supply (not shown), and is an electrode to which, for example, a first power supply voltage (Vcc) is applied. The first power supply electrode 144a is disposed at an end portion of the sealing front surface 143a closer to the third base material side surface 51e in the lateral direction X and at an end portion of the sealing front surface 143a closer to the switching element 20 in the longitudinal direction Y.

[0205] The second power supply electrode 144b is an electrode electrically connected to the negative electrode of the control power supply, and is an electrode to which, for example, a second power supply voltage (GND) lower than the first power supply voltage (Vcc) is applied. The second power supply electrode 144b is disposed at an end portion of the sealing front surface 143a closer to the third base material side surface 51e in the lateral direction X and at an end portion of the sealing front surface 143a closer to the second base material side surface 51d in the longitudinal direction Y.

[0206] The output electrode 144c is an electrode for applying a gate voltage to the gate electrode 23 of the switching element 20. The output electrode 144c is disposed at the central portion in the lateral direction X of the sealing main surface 143a and at the end portion closer to the switching element 20 in the longitudinal direction Y of the sealing main surface 143a. When viewed from the longitudinal direction Y, the output electrode 144c is disposed at a position overlapping with the gate electrode 23 of the switching element 20.

[0207] The input electrode 144d is an electrode for electrically connecting to the source electrode 22 of the switching element 20. The input electrode 144d is disposed at the end portion closer to the fourth base material side surface 51f in the lateral direction X of the sealing main surface 143a and at the end portion closer to the switching element 20 in the longitudinal direction Y of the sealing main surface 143a. When viewed from the longitudinal direction Y, the input electrode 144d is disposed at a position overlapping with the source electrode 22 of the switching element 20.

[0208] The signal electrode 144e is an electrode to which a gate signal is input from a gate signal generation circuit (not shown) provided outside the semiconductor laser device 1D. The signal electrode 144e is disposed at the end portion closer to the fourth base material side surface 51f in the lateral direction X of the sealing main surface 143a and at the central portion in the longitudinal direction Y of the sealing main surface 143a.

[0209] The reference voltage output electrode 144f is an electrode for transforming and outputting the first power supply voltage applied from, for example, a control power supply into a reference voltage (for example, 2.5V). In this case, a regulator for generating the reference voltage is provided inside the driver circuit 140. The reference voltage output electrode 144f is disposed at the end portion closer to the fourth base material side surface 51f in the lateral direction X of the sealing main surface 143a and at the end portion closer to the second base material side surface 51d in the longitudinal direction Y of the sealing main surface 143a.

[0210] The driver circuit 140 is electrically connected to the switching element 20 and the main surface side conductive portion 60A by a plurality of connection members 160 for drivers. The plurality of connection members 160 for drivers include a first connection member 161 for drivers, a second connection member 162 for drivers, a third connection member 163 for drivers, a fourth connection member 164 for drivers, a fifth connection member 165 for drivers, and a sixth connection member 166 for drivers. These connection members 161 to 165 for drivers are made of the same material as, for example, the first connection members 81 and 82 for driving and the connection members 85 and 86 for lasers. Each of the connection members 161 to 165 for drivers is a wire made of a metal such as Au (gold), Cu (copper), or Al (aluminum). In the present embodiment, each of the connection members 161 to 165 for drivers is formed by wire bonding. The wire diameters of the connection members 161 to 165 for drivers are equal to the wire diameters of the first connection members 81 and 82 for driving and the connection members 85 and 86 for lasers. Here, if the maximum deviation amount between the wire diameters of the connection members 161 to 165 for drivers and the wire diameters of the first connection members 81 and 82 for driving and the connection members 85 and 86 for lasers is within 5% of the wire diameter of the first connection member 81 for driving, it can be said that the wire diameters of the connection members 161 to 165 for drivers are equal to the wire diameters of the first connection members 81 and 82 for driving and the connection members 85 and 86 for lasers.

[0211] The connection member 161 for the first driver connects the first power supply electrode 144a and the first power supply conductive part 151. The connection member 162 for the second driver connects the second power supply electrode 144b and the second power supply conductive part 152. The connection member 163 for the third driver connects the signal electrode 144e and the signal conductive part 153. The connection member 164 for the fourth driver connects the reference voltage output electrode 144f and the reference voltage conductive part 154. The connection member 165 for the fifth driver connects the output electrode 144c and the gate electrode 23 of the switching element 20. Therefore, the connection member 165 for the fifth driver corresponds to a control connection member that connects the driver circuit and the control electrode of the switching element. The connection member 166 for the sixth driver connects the input electrode 144d and the source electrode 22 of the switching element 20. Therefore, the connection member 166 for the sixth driver corresponds to a second drive connection member that connects the driver circuit and the second drive electrode of the switching element. The connection member 166 for the sixth driver has a first end portion 166a and a second end portion 166b. The first end portion 166a is connected to the source electrode 22, and the second end portion 166b is connected to the input electrode 144d. The first end portion 166a is connected to a portion of the source electrode 22 that overlaps the input electrode 144d when viewed from the vertical direction Y and to an end portion of the source electrode 22 closer to the input electrode 144d in the vertical direction Y.

[0212] As shown in FIG. 34, the backside conductive part 60B has a driver terminal conductive part 155, a first power supply terminal conductive part 156, a second power supply terminal conductive part 157, a signal terminal conductive part 158, and a reference voltage terminal conductive part 159.

[0213] As shown in FIGS. 33 and 34, the conductive portion 155 for driver terminals is disposed at a portion of the back surface 51b of the base material 51 that overlaps with the driver circuit mounting portion 150 when viewed in the thickness direction Z. The shape and size of the conductive portion 155 for driver terminals are the same as those of the driver circuit mounting portion 150. The conductive portion 156 for the first power supply terminal is disposed at a portion of the back surface 51b of the base material that overlaps with the conductive portion 151 for the first power supply when viewed in the thickness direction Z. The shape and size of the conductive portion 156 for the first power supply terminal are the same as those of the conductive portion 151 for the first power supply. The conductive portion 157 for the second power supply terminal is disposed at a portion of the back surface 51b of the base material that overlaps with the conductive portion 152 for the second power supply when viewed in the thickness direction Z. The shape and size of the conductive portion 157 for the second power supply terminal are the same as those of the conductive portion 152 for the second power supply. The conductive portion 158 for signal terminals is disposed at a portion of the back surface 51b of the base material that overlaps with the conductive portion 153 for signals when viewed in the thickness direction Z. The shape and size of the conductive portion 158 for signal terminals are the same as those of the conductive portion 153 for signals. The conductive portion 159 for reference voltage terminals is disposed at a portion of the back surface 51b of the base material that overlaps with the conductive portion 154 for reference voltage when viewed in the thickness direction Z. The shape and size of the conductive portion 159 for reference voltage terminals are the same as those of the conductive portion 154 for reference voltage.

[0214] As shown in FIG. 34, the size of the gap Gr7 between the conductive portion 155 for driver terminals and the conductive portions 156 and 157 for each power supply terminal in the lateral direction X is smaller than the size of the gap Gr2 between the conductive portion 68 for the third terminal and the conductive portion 66A for the first terminal in the lateral direction X. Also, the size of the gap Gr8 between the conductive portion 155 for driver terminals and the conductive portions 158 for signal terminals and 159 for reference voltage terminals in the lateral direction X is smaller than the size of the gap Gr2 between the conductive portion 68 for the third terminal and the conductive portion 66B for the first terminal in the lateral direction X. Further, the sizes of the gaps Gr7 and Gr8 are each smaller than the size of the gap Gr9 between the conductive portion 155 for driver terminals and the conductive portion 68 for the third terminal in the longitudinal direction Y.

[0215] As shown in FIGS. 33 and 34, the connection part 60C has a plurality (four in this embodiment) of connection parts 170 for drivers, a connection part 171 for the first power supply, a connection part 172 for the second power supply, a connection part 173 for signals, and a connection part 174 for the reference voltage. These connection parts 170 to 174 have through holes 71 and conductor parts 72 (both not shown in FIGS. 33 and 34) like other connection parts.

[0216] The four connection parts 170 for drivers are provided at a portion in the thickness direction Z that overlaps between the driver circuit mounting part 150 and the conductive part 155 for driver terminals on the base material 51. Each connection part 170 for a driver connects the driver circuit mounting part 150 and the conductive part 155 for driver terminals.

[0217] The connection part 171 for the first power supply is provided at a portion in the thickness direction Z that overlaps between the conductive part 151 for the first power supply and the conductive part 156 for the first power supply terminal on the base material 51. The connection part 171 for the first power supply connects the conductive part 151 for the first power supply and the conductive part 156 for the first power supply terminal.

[0218] The connection part 172 for the second power supply is provided at a portion in the thickness direction Z that overlaps between the conductive part 152 for the second power supply and the conductive part 157 for the second power supply terminal on the base material 51. The connection part 172 for the second power supply connects the conductive part 152 for the second power supply and the conductive part 157 for the second power supply terminal.

[0219] The connection part 173 for signals is provided at a portion in the thickness direction Z that overlaps between the conductive part 153 for signals and the conductive part 158 for signal terminals on the base material 51. The connection part 173 for signals connects the conductive part 153 for signals and the conductive part 158 for signal terminals.

[0220] The connection part 174 for the reference voltage is provided at a portion in the thickness direction Z that overlaps between the conductive part 154 for the reference voltage and the conductive part 159 for the reference voltage terminal on the base material 51. The connection part 174 for the reference voltage connects the conductive part 154 for the reference voltage and the conductive part 159 for the reference voltage terminal.

[0221] Incidentally, the number of these connection parts 170 to 174 can be arbitrarily changed respectively. The semiconductor laser device 1D only needs to have at least one of these connection parts 170 to 174 respectively. Also, the arrangement position of the driver connection part 170 with respect to the driver circuit mounting part 150 (the conductive part 155 for driver terminals), the arrangement position of the first power supply connection part 171 with respect to the first power supply conductive part 151 (the conductive part 156 for the first power supply terminals), the arrangement position of the second power supply connection part 172 with respect to the second power supply conductive part 152 (the conductive part 157 for the second power supply terminals), the arrangement position of the signal connection part 173 with respect to the signal conductive part 153 (the conductive part 158 for signal terminals), and the arrangement position of the reference voltage connection part 174 with respect to the reference voltage conductive part 154 (the conductive part 159 for reference voltage terminals) can be arbitrarily changed respectively.

[0222] According to the semiconductor laser device 1D of the present embodiment, in addition to the effects of the first embodiment, the following effects can be obtained. (4-1) The semiconductor laser device 1D includes a driver circuit 140. According to this configuration, a first drive loop and a second drive loop, which are the first paths of the current flowing from the source electrode 22 of the switching element 20 to the first drive conductive parts 61A and 61B via the first drive connection members 81 and 82, and a control loop, which is the second path of the current flowing from the source electrode 22 to the driver circuit 140 via the sixth driver connection member 166, are formed separately. Thereby, the influence of the current fluctuations in the first drive loop and the second drive loop on the control loop is reduced. That is, in the control loop, it becomes difficult to be affected by the inductance of the first drive connection members 81 and 82. Therefore, in the control loop, the influence of the back electromotive voltage caused by the inductance of the first drive connection members 81 and 82 on the voltage Vgs applied to the gate electrode 23 of the switching element 20 can be reduced.

[0223] In addition, since the driver circuit 140 is incorporated in the semiconductor laser device 1D, the distances between the source electrode 22 of the switching element 20 and the input electrode 142 of the driver circuit 140, and between the gate electrode 23 of the switching element 20 and the output electrode 141 of the driver circuit 140 are shortened respectively. Therefore, the inductance in the control loop can be reduced.

[0224] (4-2) The driver circuit 140 is arranged on the side opposite to the semiconductor laser element 10 with respect to the switching element 20 in the vertical direction Y. According to this configuration, since the control loop can be formed far from the first driving loop and the second driving loop, it becomes difficult for the control loop to be affected by the inductances of the first driving loop and the second driving loop.

[0225] (4-3) The gate electrode 23 of the switching element 20 is arranged closer to the driver circuit 140. According to this configuration, the distance between the gate electrode 23 and the output electrode 141 of the driver circuit 140 can be shortened. Therefore, the inductance in the control loop can be reduced.

[0226] (4-4) The sixth driver connection member 166 is connected to the end of the source electrode 22 of the switching element 20 closer to the driver circuit 140 in the vertical direction Y. According to this configuration, since the length of the sixth driver connection member 166 can be shortened, the inductance in the control loop can be reduced.

[0227] [Modification Example of the Fourth Embodiment] The semiconductor laser device 1D of the fourth embodiment can be modified as follows, for example. The following modification examples can be combined as long as no technical contradiction occurs. In the following modification examples, for the parts common to the first to fourth embodiments, the same reference numerals as those in the first to fourth embodiments are given and their descriptions are omitted.

[0228] · The semiconductor laser device 1D of the fourth embodiment was configured with a driver circuit 140 built into the semiconductor laser device 1A on the premise of the configuration of the semiconductor laser device 1A of the first embodiment, but it is not limited thereto. For example, the semiconductor laser device 1D may be configured with a driver circuit 140 built into the semiconductor laser devices 1B and 1C on the premise of the configuration of the semiconductor laser device 1B of the second embodiment or the semiconductor laser device 1C of the third embodiment.

[0229] Figures 35 and 36 show a first example of the configuration of the semiconductor laser device 1D with the driver circuit 140 built into the semiconductor laser device 1B of the second embodiment. As shown in Figure 35, the shape of the base material 51 of the support substrate 50 in the present embodiment in a plan view is a rectangular shape in which the longitudinal direction Y is the long side direction and the lateral direction X is the short side direction. In the present embodiment, the first driving conductive portion 61 and the third driving conductive portion 63 are arranged closer to the first base material side surface 51c of the base material 51 in the longitudinal direction Y. That is, the central portions of the first driving conductive portion 61 and the third driving conductive portion 63 in the longitudinal direction Y are located closer to the first base material side surface 51c than the central portion of the base material 51 in the longitudinal direction Y. Further, in the present embodiment, the conductive portion 60 is configured such that the second driving conductive portion 62 and the control conductive portion 65 are omitted from the main surface side conductive portion 60A, and the second terminal conductive portion 67 and the control terminal conductive portion 70 (both shown in Figure 3) are omitted from the back surface side conductive portion 60B.

[0230] In a portion of the base material main surface 51a of the base material 51 closer to the second base material side surface 51d than the first driving conductive portion 61 and the third driving conductive portion 63, a driver circuit mounting portion 150, a first power supply conductive portion 151, a second power supply conductive portion 152, a signal conductive portion 153, and a reference voltage conductive portion 154 are formed. Since the shapes and arrangements of the driver circuit mounting portion 150 and the respective conductive portions 151 to 154 are the same as those of the driver circuit mounting portion 150 and the respective conductive portions 151 to 154 of the fourth embodiment, the description thereof is omitted.

[0231] The driver circuit 140 mounted on the driver circuit mounting part 150 differs only in the arrangement of the output electrode 144c and the input electrode 144d compared with the driver circuit 140 of the fourth embodiment. The output electrode 144c is arranged at an end of the sealing main surface 143a of the sealing member 143 closer to the fourth base material side surface 51f in the lateral direction X and at an end of the sealing main surface 143a closer to the switching element 20 in the longitudinal direction Y. When viewed from the longitudinal direction Y, the output electrode 144c is arranged at a position overlapping with the source electrode 22 of the switching element 20. The output electrode 144c is arranged closer to the third base material side surface 51e than the gate electrode 23 of the switching element 20. The input electrode 144d is arranged at a portion closer to the fourth base material side surface 51f than the central portion of the sealing main surface 143a in the lateral direction X and at an end of the sealing main surface 143a closer to the switching element 20 in the longitudinal direction Y. The distance between the input electrode 144d and the output electrode 144c in the lateral direction X is smaller than the distance between the input electrode 144d and the first power supply electrode 144a in the lateral direction X. When viewed from the longitudinal direction Y, the input electrode 144d is arranged such that a part of it overlaps with the source electrode 22.

[0232] The connection modes of the first to fourth driver connection members 161 to 164 are the same as the connection modes of the first to fourth driver connection members 161 to 164 of the fourth embodiment. The fifth driver connection member 165 connects the output electrode 144c and the gate electrode 23. Therefore, in plan view, the fifth driver connection member 165 extends obliquely toward the fourth base material side surface 51f from the output electrode 144c toward the gate electrode 23. The sixth driver connection member 166 connects the input electrode 144d and the source electrode 22. The sixth driver connection member 166 is connected to an end of the source electrode 22 closer to the driver circuit 140 in the longitudinal direction Y. Also, as shown in FIG. 35, the length of the sixth driver connection member 166 is shorter than the length of the fifth driver connection member 165.

[0233] As shown in FIG. 36, the back-side conductive portion 60B has a first terminal conductive portion 66, a third terminal conductive portion 68, a fourth terminal conductive portion 69, a driver terminal conductive portion 155, a first power supply terminal conductive portion 156, a second power supply terminal conductive portion 157, a signal terminal conductive portion 158, and a reference voltage terminal conductive portion 159. Note that since the configurations and arrangements of the driver terminal conductive portion 155, the first power supply terminal conductive portion 156, the second power supply terminal conductive portion 157, the signal terminal conductive portion 158, and the reference voltage terminal conductive portion 159 are the same as those in the fourth embodiment, the description thereof is omitted.

[0234] The first terminal conductive portion 66 is disposed at a portion that overlaps with the first driving conductive portion 61 in the thickness direction Z on the back surface 51b of the base material. The size of the first terminal conductive portion 66 in the longitudinal direction Y is smaller than the size of the first driving conductive portion 61 in the longitudinal direction Y.

[0235] The fourth terminal conductive portion 69 is disposed at a portion that overlaps with the fourth driving conductive portion 64 in the thickness direction Z on the back surface 51b of the base material. The fourth terminal conductive portion 69 is disposed at a position that overlaps with the first terminal conductive portion 66 when viewed from the longitudinal direction. The size of the fourth terminal conductive portion 69 in the lateral direction X is smaller than the size of the fourth driving conductive portion 64 in the lateral direction X.

[0236] The third terminal conductive portion 68 is disposed at a portion that overlaps with the third driving conductive portion 63 in the thickness direction Z on the back surface 51b of the base material. The size of the third terminal conductive portion 68 in the lateral direction X is smaller than the size of the third driving conductive portion 63 in the lateral direction X. The third terminal conductive portion 68 of the present embodiment is formed by integrating the third terminal conductive portions 68A and 68B of the semiconductor laser device 1B of the second embodiment.

[0237] As shown in FIGS. 35 and 36, the connection portion 60C includes a first drive connection portion 73, third drive connection portions 75A and 75B, a fourth drive connection portion 76, a driver connection portion 170, a first power supply connection portion 171, a second power supply connection portion 172, a signal connection portion 173, and a reference voltage connection portion 174. Since the configurations and arrangements of the driver connection portion 170, the first power supply connection portion 171, the second power supply connection portion 172, the signal connection portion 173, and the reference voltage connection portion 174 are the same as those in the fourth embodiment, the description thereof is omitted.

[0238] The first drive connection portion 73 connects the first drive conductive portion 61 and the first terminal conductive portion 66. In FIGS. 35 and 36, four first drive connection portions 73 are arranged on the second base material side surface 51d side of the first drive conductive portion 61 and the first terminal conductive portion 66 in the vertical direction Y.

[0239] The third drive connection portion 75A is provided in the switching element mounting portion 63a. The third drive connection portion 75B is provided in the semiconductor laser element mounting portion 63b. In the present embodiment, nine third drive connection portions 75A are provided and two third drive connection portions 75B are provided. Each third drive connection portion 75A connects the switching element mounting portion 63a and the third terminal conductive portion 68. Each third drive connection portion 75B connects the semiconductor laser element mounting portion 63b and the third terminal conductive portion 68. Thus, by incorporating the driver circuit 140, the same effects as those in the fourth embodiment can be obtained.

[0240] FIG. 37 shows a configuration in which the electrodes formed on the element main surface 24a of the switching element 20 are different from those of the semiconductor laser device 1D in FIG. 35. On the element main surface 24a of the switching element 20 in FIG. 37, a first source electrode 22A, a second source electrode 22B, and a gate electrode 23 are formed.

[0241] The first source electrode 22A is formed over most of the main surface 24a of the element. A notch 25 is formed in the first source electrode 22A. The notch 25 is formed at an end of the first source electrode 22A closer to the driver circuit 140 in the longitudinal direction Y and at a portion closer to the first driving conductive portion 61 in the lateral direction X. The second source electrode 22B and the gate electrode 23 are disposed in the notch 25.

[0242] The second source electrode 22B and the gate electrode 23 are arranged at intervals in the lateral direction X while being aligned in the longitudinal direction Y. The second source electrode 22B is disposed on the first driving conductive portion 61 side with respect to the gate electrode 23 in the lateral direction X. The second source electrode 22B is disposed at a position where a part thereof overlaps with the input electrode 144d when viewed from the longitudinal direction Y. The gate electrode 23 is disposed at a position where a part thereof overlaps with the output electrode 144c when viewed from the longitudinal direction Y. According to this configuration, the lengths of the fifth driver connection member 165 that connects the gate electrode 23 and the output electrode 144c and the sixth driver connection member 166 that connects the second source electrode 22B and the input electrode 144d can be shortened respectively.

[0243] FIGS. 38 and 39 show a second example of the configuration of a semiconductor laser device 1D incorporating a driver circuit 140 in the semiconductor laser device 1B of the second embodiment. As shown in FIG. 38, the shape of the base material 51 of the support substrate 50 in the present embodiment is a rectangular shape in which the lateral direction X is the long side direction and the longitudinal direction Y is the short side direction. In the present embodiment, compared with the fourth embodiment, the distance between the third driving conductive portion 63 and the third base side surface 51e of the base material 51 in the lateral direction X is large. Also in the present embodiment, the conductive portion 60 is configured such that the second driving conductive portion 62 and the control conductive portion 65 are omitted from the main surface side conductive portion 60A, and the second terminal conductive portion 67 and the control terminal conductive portion 70 (both shown in FIG. 34) are omitted from the back surface side conductive portion 60B.

[0244] The third driving conductive part 63 is arranged at the central part of the substrate main surface 51a in the lateral direction X. The driver circuit mounting part 150, the first power supply conductive part 151, the second power supply conductive part 152, the signal conductive part 153, and the reference voltage conductive part 154 are each arranged on the side opposite to the first driving conductive part 61 with respect to the third driving conductive part 63 in the lateral direction X (the fourth substrate side surface 51f side). The shape of the driver circuit mounting part 150 in plan view is a rectangular shape in which the longitudinal direction Y is the long side direction and the lateral direction X is the short side direction.

[0245] The first power supply conductive part 151 and the second power supply conductive part 152 are each arranged closer to the first substrate side surface 51c than the driver circuit mounting part 150 in the longitudinal direction Y. The first power supply conductive part 151 and the second power supply conductive part 152 are arranged at intervals in the lateral direction X in a state of being aligned in the longitudinal direction Y. When viewed from the longitudinal direction Y, the first power supply conductive part 151 and the second power supply conductive part 152 are each arranged at a position overlapping the driver circuit mounting part 150. The first power supply conductive part 151 is arranged on the third driving conductive part 63 side with respect to the second power supply conductive part 152 in the lateral direction X.

[0246] The signal conductive part 153 and the reference voltage conductive part 154 are each arranged closer to the second substrate side surface 51d than the driver circuit mounting part 150 in the longitudinal direction Y. The signal conductive part 153 and the reference voltage conductive part 154 are arranged at intervals in the lateral direction X in a state of being aligned in the longitudinal direction Y. When viewed from the longitudinal direction Y, the signal conductive part 153 and the reference voltage conductive part 154 are each arranged at a position overlapping the driver circuit mounting part 150. The signal conductive part 153 is arranged on the third driving conductive part 63 side with respect to the reference voltage conductive part 154 in the lateral direction X.

[0247] The driver circuit 140 is mounted on the driver circuit mounting portion 150. The driver circuit 140 in FIG. 38 has a different arrangement direction with respect to the driver circuit mounting portion 150 as compared with the driver circuit 140 in FIG. 35. Specifically, the driver circuit 140 in FIG. 38 is in an arrangement mode in which the driver circuit 140 in FIG. 35 is rotated 90 degrees clockwise when viewed from a direction perpendicular to the main surface 51a of the base material. Therefore, the connection modes of the respective driver connection members 161 to 165 are substantially the same as the connection modes of the respective driver connection members 161 to 165 in FIG. 35. The first end portion 166a of the sixth driver connection member 166 is connected to an end portion of the source electrode 22 closer to the input electrode 144d in the lateral direction X.

[0248] As shown in FIG. 39, on the fourth base material side surface 51f side of the third terminal conductive portion 68 in the lateral direction X, there are arranged a driver terminal conductive portion 155, a first power supply terminal conductive portion 156, a second power supply terminal conductive portion 157, a signal terminal conductive portion 158, and a reference voltage terminal conductive portion 159.

[0249] The conductive portion 155 for driver terminals is disposed at a portion of the back surface 51b of the base material 51 that overlaps with the driver circuit mounting portion 150 when viewed from the thickness direction Z. The shape and size of the conductive portion 155 for driver terminals are the same as those of the driver circuit mounting portion 150. The conductive portion 156 for first power supply terminals is disposed at a portion of the back surface 51b of the base material that overlaps with the conductive portion 151 for first power supply when viewed from the thickness direction Z. The shape and size of the conductive portion 156 for first power supply terminals are the same as those of the conductive portion 151 for first power supply. The conductive portion 157 for second power supply terminals is disposed at a portion of the back surface 51b of the base material that overlaps with the conductive portion 152 for second power supply when viewed from the thickness direction Z. The shape and size of the conductive portion 157 for second power supply terminals are the same as those of the conductive portion 152 for second power supply. The conductive portion 158 for signal terminals is disposed at a portion of the back surface 51b of the base material that overlaps with the conductive portion 153 for signals when viewed from the thickness direction Z. The shape and size of the conductive portion 158 for signal terminals are the same as those of the conductive portion 153 for signals. The conductive portion 159 for reference voltage terminals is disposed at a portion of the back surface 51b of the base material that overlaps with the conductive portion 154 for reference voltage when viewed from the thickness direction Z. The shape and size of the conductive portion 159 for reference voltage terminals are the same as those of the conductive portion 154 for reference voltage.

[0250] According to such a configuration, the semiconductor laser element 10 is positioned at the central portion in the lateral direction X of the base material 51. For this reason, the deviation in the lateral direction X of the semiconductor laser element 10 with respect to the support substrate 50 is eliminated, so that the wiring pattern of the wiring substrate can be designed without considering the above deviation of the semiconductor laser element 10. Therefore, the usability of the semiconductor laser device 1D is improved.

[0251] FIG. 40 shows the configuration of a semiconductor laser device 1D incorporating a driver circuit 140 in a configuration in which the switching element 20 of the semiconductor laser device 1A of the first embodiment is replaced with the lateral-type switching element 20A of the semiconductor laser device 1C of the third embodiment, assuming the semiconductor laser device 1A of the first embodiment.

[0252] As shown in FIG. 40, the first source electrode 22A, the second source electrode 22B, and the gate electrode 23 of the switching element 20A are each formed at an end of the main element surface 24a closer to the driver circuit 140. The first source electrode 22A overlaps with the first power supply electrode 144a and the second power supply electrode 144b of the driver circuit 140 when viewed in the longitudinal direction Y. The second source electrode 22B overlaps with the input electrode 144d, the signal electrode 144e, and the reference voltage output electrode 144f of the driver circuit 140 when viewed in the longitudinal direction Y. The gate electrode 23 overlaps with the output electrode 144c of the driver circuit 140 when viewed in the longitudinal direction Y.

[0253] The connection modes of the connection members 161 to 165 for each driver are the same as those of the connection members 161 to 165 for each driver in the fourth embodiment. The sixth connection member 166 for the driver connects the input electrode 144d of the driver circuit 140 and the second source electrode 22B of the switching element 20A. Note that the configuration of the back surface side conductive portion 60B is the same as that of the back surface side conductive portion 60B in the fourth embodiment. According to the semiconductor laser device 1D shown in FIG. 40, the same effects as those of the fourth embodiment can be obtained.

[0254] · In the semiconductor laser device 1D shown in FIG. 40, the number of semiconductor laser elements 10 can be arbitrarily changed. As an example, as shown in FIG. 41, in the semiconductor laser device 1D of FIG. 40 described above, the configuration can be changed to one in which two semiconductor laser elements 10A and 10B are provided. In this case, the shapes of the third driving conductive portion 63 and the fourth driving conductive portions 64A and 64B, the arrangement modes of the semiconductor laser elements 10A and 10B, and the connection modes of the laser connection members 85 and 86 are the same as those of the semiconductor laser device 1A in the modification example shown in FIG. 17. Although not shown, the shapes and arrangement modes of the third terminal conductive portion 68 and the fourth terminal conductive portions 69A and 69B of the back surface side conductive portion 60B are the same as those of the semiconductor laser device 1A in the modification example shown in FIG. 18.

[0255] · In the semiconductor laser device 1D shown in FIG. 41, as shown in FIG. 42, the anode electrodes 11 of the two semiconductor laser elements 10A and 10B may be connected by an element connection member 87.

[0256] ·In the semiconductor laser device 1D shown in FIGS. 41 and 42, as shown in FIG. 43, instead of the semiconductor laser elements 10A and 10B, the semiconductor laser element 10C shown in FIGS. 20 and 21 may be used.

[0257] ·In the semiconductor laser device 1D of the fourth embodiment and its modified example, the driver circuit 140 was mounted on the main surface 51a of the base material 51 of the support substrate 50, but it is not limited to this. For example, a structure in which the driver circuit 140 is embedded inside the support substrate 50 may be used. According to this configuration, the semiconductor laser device 1D can be miniaturized in the lateral direction X or the longitudinal direction Y by arranging the switching element 20 and the driver circuit 140 side by side in the thickness direction Z.

[0258] ·In the semiconductor laser device 1D of the fourth embodiment and its modified example, the wire diameters of the respective driver connection members 161 to 166 may be different from the wire diameter of the other connection member 80. Further, the material constituting each of the driver connection members 161 to 166 may be different from the material constituting the other connection member 80.

[0259] [Fifth Embodiment] With reference to FIGS. 44 to 46, the semiconductor laser device 1E of the fifth embodiment will be described. The semiconductor laser device 1E of the present embodiment mainly differs in the shape of a part of the conductive portion 60 as compared with the semiconductor laser device 1B of the second embodiment. In the present embodiment, for convenience, the same components as those in the second embodiment are denoted by the same reference numerals, and the description thereof may be omitted.

[0260] As shown in FIG. 44, the semiconductor laser device 1E has, as the main surface side conductive portion 60A, a first drive conductive portion 61, a third drive conductive portion 63, a fourth drive conductive portion 64, and a control conductive portion 65. That is, the semiconductor laser device 1E does not have the second drive conductive portion 62.

[0261] The size of the base material 51 of the support substrate 50 in the vertical direction Y is larger than the size of the base material 51 of the second embodiment in the vertical direction Y. The size of the base material 51 in the horizontal direction X is equal to the size of the base material 51 of the second embodiment in the horizontal direction X. Therefore, the aspect ratio of the base material 51 in plan view is different from the aspect ratio of the base material 51 of the second embodiment.

[0262] The arrangement modes of the first driving conductive part 61, the third driving conductive part 63, and the fourth driving conductive part 64 are the same as those of the second embodiment. The size of the first driving conductive part 61 in the vertical direction Y is larger than the size of the first driving conductive part 61 of the second embodiment in the vertical direction Y. The size of the third driving conductive part 63 in the vertical direction Y is larger than the size of the third driving conductive part 63 of the second embodiment in the vertical direction Y. More specifically, the size of the switching element mounting part 63a in the vertical direction Y is larger than the size of the switching element mounting part 63a of the second embodiment in the vertical direction Y. Also, in the present embodiment, both end portions of the first driving conductive part 61 in the vertical direction Y are defined as the first end portion 61a and the second end portion 61b. The first end portion 61a is an end portion of the first driving conductive part 61 closer to the first base material side surface 51c, and is the end portion to which the first terminals 31 of the capacitors 30A and 30B are connected. The second end portion 61b is an end portion of the first driving conductive part 61 closer to the second base material side surface 51d.

[0263] The control conductive part 65 is arranged closer to the second base material side surface 51d than the third driving conductive part 63. The shape of the control conductive part 65 in plan view is a rectangular shape in which the horizontal direction X is the long side direction and the vertical direction Y is the short side direction. The size of the control conductive part 65 in the horizontal direction X is larger than the size of the control conductive part 65 of the second embodiment in the horizontal direction X.

[0264] As shown in Fig. 45, the semiconductor laser device 1E has, as a back surface side conductive portion 60B, a first terminal conductive portion 66A, 66B, a third terminal conductive portion 68A, 68B, a fourth terminal conductive portion 69, and a control terminal conductive portion 70. That is, the semiconductor laser device 1E does not have a second terminal conductive portion 67. In the present embodiment, the arrangement modes of the first terminal conductive portion 66A, 66B, the third terminal conductive portion 68A, 68B, and the fourth terminal conductive portion 69 are the same as those in the second embodiment. The size of the third terminal conductive portion 68A, 68B in the lateral direction X is smaller than the size of the third terminal conductive portion 68A, 68B in the lateral direction X in the second embodiment. The size of the third terminal conductive portion 68A in the longitudinal direction Y is larger than the size of the third terminal conductive portion 68A in the longitudinal direction Y in the second embodiment.

[0265] The control terminal conductive portion 70 is arranged at a position overlapping the control conductive portion 65 in the thickness direction Z. The size of the control terminal conductive portion 70 in the lateral direction X is larger than the size of the control terminal conductive portion 70 in the lateral direction X in the second embodiment.

[0266] The semiconductor laser device 1E of the present embodiment has, as a connection portion 60C, a first drive connection portion 73A, 73B, a third drive connection portion 75A, 75B, a fourth drive connection portion 76, and a control connection portion 77. That is, the semiconductor laser device 1E does not have a second drive connection portion 74. In the present embodiment, the arrangement modes of the first drive connection portion 73A, 73B, the third drive connection portion 75A, 75B, and the fourth drive connection portion 76 are the same as those in the second embodiment. In the present embodiment, different from the second embodiment, four third drive connection portions 75A and two control connection portions 77 are provided. The four third drive connection portions 75A are arranged spaced apart from each other in the lateral direction X and the longitudinal direction Y. The two control connection portions 77 are arranged spaced apart in the lateral direction X in a state aligned in the longitudinal direction Y.

[0267] As shown in Fig. 44, the size of the switching element 20 mounted on the switching element mounting portion 63a of the third drive conductive portion 63 in the longitudinal direction Y is larger than the size of the switching element 20 in the longitudinal direction Y in the second embodiment.

[0268] In this embodiment, the connection positions of the source electrode 22 of the first driving connection member 81 and the first driving conductive portion 61 are different from the connection positions of the source electrode 22 of the first driving connection member 81 and the first driving conductive portion 61 in the second embodiment. Specifically, for the sake of convenience, the three first driving connection members 81 are referred to as the first driving connection members 81A, 81B, and 81C. The first driving connection member 81A is the connection member closest to the capacitors 30A and 30B among the three first driving connection members 81A to 81C. The first driving connection member 81C is the connection member farthest from the capacitors 30A and 30B among the three first driving connection members 81A to 81C. The first driving connection member 81B is disposed between the first driving connection member 81A and the first driving connection member 81C in the vertical direction Y.

[0269] The first end portion 81ax connected to the source electrode 22 in the first driving connection member 81A is disposed at a portion closer to the first base material side surface 51c than the central portion in the vertical direction Y of the source electrode 22 of the source electrode 22. The second end portion 81bx connected to the first driving conductive portion 61 in the first driving connection member 81A is disposed at a portion closer to the first base material side surface 51c than the central portion in the vertical direction Y of the first driving conductive portion 61 of the first driving conductive portion 61. More specifically, the second end portion 81bx is disposed at a portion closer to the first base material side surface 51c than the four first driving connection portions 73 formed in the first driving conductive portion 61. The second end portion 81bx is located closer to the second base material side surface 51d than the first end portion 81ax in the vertical direction Y. Therefore, in a plan view, the first driving connection member 81A extends toward the second base material side surface 51d as it goes from the first end portion 81ax to the second end portion 81bx.

[0270] In the first drive connection member 81B, the first end portion 81ay connected to the source electrode 22 is disposed at a position closer to the first base material side surface 51c than the central portion in the longitudinal direction Y of the source electrode 22 and closer to the central portion than the first end portion 81ax in the source electrode 22. In the first drive connection member 81B, the second end portion 81by connected to the first drive conductive portion 61 is disposed at a position closer to the first base material side surface 51c than the central portion in the longitudinal direction Y of the first drive conductive portion 61 and closer to the central portion than the first end portion 81ax in the first drive conductive portion 61. More specifically, the second end portion 81by is disposed between the four first drive connection portions 73 in the longitudinal direction Y. The second end portion 81by is located closer to the second base material side surface 51d than the first end portion 81ay in the longitudinal direction Y. Therefore, the first drive connection member 81B extends toward the second base material side surface 51d side in a plan view as it goes from the first end portion 81ay to the second end portion 81by.

[0271] In the first drive connection member 81C, the first end portion 81az connected to the source electrode 22 is disposed at a portion closer to the second base material side surface 51d than the central portion in the longitudinal direction Y of the source electrode 22. Specifically, the first end portion 81az is connected to a portion adjacent to the notch portion 25 of the source electrode 22 in the lateral direction X. In the first drive connection member 81C, the second end portion 81bz connected to the first drive conductive portion 61 is disposed at a portion closer to the second base material side surface 51d than the central portion in the longitudinal direction Y of the first drive conductive portion 61. More specifically, the distance DY1 between the edge 61c closer to the second base material side surface 51d of the first drive conductive portion 61 and the second end portion 81bz in the longitudinal direction Y is smaller than the distance DY2 between the first terminal 31 of the capacitor 30B and the second end portion 81bz in the longitudinal direction Y. Also, the second end portion 81bz is connected to a portion closer to the switching element 20 in the first drive conductive portion 61 in the lateral direction X.

[0272] The second end portion 81bz is located closer to the second substrate side surface 51d than the first end portion 81az in the longitudinal direction Y. Therefore, the first driving connection member 81C extends toward the second substrate side surface 51d as it extends from the first end portion 81az to the second end portion 81bz in a plan view. The distance DYC in the longitudinal direction Y between the first end portion 81az and the second end portion 81bz is larger than the distance DYA in the longitudinal direction Y between the first end portion 81ax and the second end portion 81bx of the first driving connection member 81A. Also, the distance DYC is larger than the distance DYB in the longitudinal direction Y between the first end portion 81ay and the second end portion 81by of the first driving connection member 81B.

[0273] As can be seen from FIG. 44, the second end portion 81bx of the first driving connection member 81A is located closer to the capacitors 30A and 30B than the second end portions 81by and 81bz of the first driving connection members 81B and 81C. Therefore, the first driving connection member 81A can be said to be the driving connection member on the side closer to the capacitors 30A and 30B among the plurality of driving connection members. In other words, the first driving connection member 81A can be said to be the first driving connection member that connects the side closer to the first terminals 31 of the capacitors 30A and 30B among the driving conductive portions (the first driving conductive portion 61) and the second driving electrode (the source electrode 22 of the switching element 20). Also, the second end portion 81bz of the first driving connection member 81C is located farther from the capacitors 30A and 30B than the second end portions 81bx and 81by of the first driving connection members 81A and 81C. The second end portion 81bz is disposed closer to the edge 61c of the first driving conductive portion 61 than the first terminals 31 of the capacitors 30A and 30B. Therefore, the first driving connection member 81C can be said to be the driving connection member on the side farther from the capacitors 30A and 30B among the plurality of driving connection members. In other words, the first driving connection member 81C can be said to be the second driving connection member that connects the side closer to the second end portion (the edge 61c) than the first terminals 31 of the capacitors 30A and 30B among the driving conductive portions (the first driving conductive portion 61) and the second driving electrode (the source electrode 22 of the switching element 20).

[0274] FIG. 46 shows a schematic diagram when the semiconductor laser device 1E of the present embodiment is applied to the laser system 100. As shown in FIG. 46, the positive electrode 111 of the power supply 110 is connected to the fourth driving conductive part 64 via the fourth terminal conductive part 69 and the fourth driving connection part 76 (both shown in FIG. 45). Also, the negative electrode 112 of the power supply 110 is connected to the first driving conductive part 61 via the first terminal conductive part 66A and the first driving connection part 73A (both shown in FIG. 45). In FIG. 45, the negative electrode 112 is connected to a portion closer to the capacitors 30A and 30B than the central portion in the vertical direction Y of the first terminal conductive part 66A. Further, the output electrode 141 of the driver circuit 140 is connected to the control conductive part 65 via the control terminal conductive part 70 and the control connection part 77 (both shown in FIG. 45). The input electrode 142 of the driver circuit 140 is connected to the first driving conductive part 61 via the first terminal conductive part 66B and the first driving connection part 73B (both shown in FIG. 45). In this way, the input electrode 142 is electrically connected to an end portion of the first driving conductive part 61 closer to the second base material side surface 51d. The output electrode 141 of the driver circuit 140 is electrically connected to the gate electrode 23 via the control conductive part 65 and the control connection member 84. The input electrode 142 of the driver circuit 140 is electrically connected to the source electrode 22 via the first driving conductive part 61 and the first driving connection member 81C.

[0275] When the laser system 100 is driven, a driving current loop is formed in which current flows in the order of the positive electrode 111 of the power supply 110, the anode electrode 11 of the semiconductor laser element 10, the cathode electrode 12, the drain electrode 21 of the switching element 20, the source electrode 22, the first driving connection member 81A, and the negative electrode 112 of the power supply 110. Also, a control current loop is formed in which current flows in the order of the output electrode 141 of the driver circuit 140, the control conductive part 65, the control connection member 84, the source electrode 22, the first driving connection member 81C, the first driving conductive part 61, and the input electrode 142. These current loops are formed independently of each other.

[0276] According to the semiconductor laser device 1E of the present embodiment, the following effects can be obtained. (5-1) The semiconductor laser device 1E includes a first driving connection member 81A connected to the source electrode 22 of the switching element 20 on the side closer to the first terminal 31 of the capacitors 30A and 30B among the first driving conductive parts 61, and a first driving connection member 81C that connects the source electrode 22 and the side closer to the gate electrode 23 than the first terminal 31 of the capacitors 30A and 30B among the first driving conductive parts 61. According to this configuration, a driving loop, which is the first path of the current flowing from the source electrode 22 of the switching element 20 to the side closer to the first terminal 31 of the capacitors 30A and 30B among the first driving conductive parts 61 via the first driving connection member 81A, and a control loop, which is the second path of the current flowing from the source electrode 22 to the side closer to the gate electrode 23 of the first driving conductive parts 61 via the first driving connection member 81C, are formed separately. Thereby, it is reduced that the fluctuation of the current in the driving loop affects the control loop. That is, in the control loop, it becomes difficult to be affected by the inductance of the first driving connection member 81. Therefore, in the control loop, the influence of the back electromotive voltage caused by the inductance of the first driving connection member 81A on the voltage Vgs applied to the gate electrode 23 of the switching element 20 can be reduced.

[0277] (5-2) The semiconductor laser element 10 can emit laser light with a pulse width of 10 ns or less. According to this configuration, as the pulse width becomes shorter, in order to form the shortest path among the current paths through which current can flow in the driving loop, current flows from the source electrode 22 of the switching element 20 via the first driving connection member 81A closest to the capacitors 30A and 30B. For this reason, the influence of the driving loop on the first driving connection member 81C far from the capacitors 30A and 30B is reduced.

[0278] [Modification Example of the Fifth Embodiment] · In the fifth embodiment, the configuration of the semiconductor laser device 1B of the second embodiment is taken as a premise, and the shape of the conductive portion 60 is different from that of the conductive portion 60 of the second embodiment, but it is not limited thereto. For example, the configurations of the semiconductor laser devices 1A and 1C of the first embodiment and the third embodiment may be taken as a premise. When taking the configuration of the semiconductor laser device 1A of the first embodiment as a premise and when taking the configuration of the semiconductor laser device 1C of the third embodiment as a premise, for example, the first driving conductive portion 61B and the second driving conductive portion 62 are integrated. According to this configuration, the same effects as those of the fifth embodiment can be obtained.

[0279] [Modification examples common to each embodiment] Each of the above embodiments is an example of the forms that the semiconductor laser device according to the present disclosure can take, and is not intended to limit the form. The semiconductor laser device according to the present disclosure can take a form different from the forms exemplified in each of the above embodiments. An example thereof is a form in which a part of the configuration of each of the above embodiments is replaced, changed, or omitted, or a form in which a new configuration is added to each of the above embodiments. In the following modification examples, for parts common to each of the above embodiments, the same reference numerals as those in each of the above embodiments are given and the description thereof is omitted.

[0280] · In each of the above embodiments, the capacitors 30A and 30B are mounted on the substrate main surface 51a of the base material 51 of the support substrate 50, but the positions of the capacitors 30A and 30B are not limited thereto. For example, the capacitors 30A and 30B may have a structure embedded inside the support substrate 50.

[0281] · In each of the above embodiments, the configuration of the connection portion 60C is such that the conductor portion 72 is embedded in the through hole 71, but the configuration of the connection portion 60C is not limited thereto. A configuration in which at least one of the plurality of connection portions 60C is replaced with an insulating material embedded in the through hole 71 may be used.

[0282] ·In each of the above embodiments, the wire diameters of the first driving connection members 81 and 82, the wire diameter of the second driving connection member 83, the wire diameter of the control connection member 84, and the wire diameters of the laser connection members 85 and 86 are equal to each other, but are not limited thereto. The wire diameters of the first driving connection members 81 and 82, the wire diameter of the second driving connection member 83, the wire diameter of the control connection member 84, and the wire diameters of the laser connection members 85 and 86 may be set individually. For example, the wire diameter of the control connection member 84 may be made smaller than the wire diameters of the driving connection members 81 to 83 and the laser connection members 85 and 86.

[0283] ·In each of the above embodiments, the materials constituting the first driving connection members 81 and 82, the second driving connection member 83, the control connection member 84, and the laser connection members 85 and 86 were common, but are not limited thereto. For example, the material of the control connection member 84 may be different from the materials of the driving connection members 81 to 83 and the laser connection members 85 and 86.

[0284] ·In each of the above embodiments, the diode 130 of the laser system 100 is provided outside the semiconductor devices 1A to 1E, but is not limited thereto. The semiconductor devices 1A to 1E may be configured to incorporate the diode 130.

[0285] The technical idea that can be grasped from the above embodiments and the above modification examples will be described below. (Appendix 1) A semiconductor laser element, A switching element that is serially connected to the semiconductor laser element and has a control electrode, a first driving electrode, and a second driving electrode, and controls the current flowing through the semiconductor laser element according to the voltage applied to the control electrode, A capacitor that is connected in parallel to the semiconductor laser element and the switching element, A first driving conductive portion to which a first terminal of the capacitor is connected, A second driving conductive portion that is disposed at a distance from the first driving conductive portion, A first driving connection member that connects the first driving conductive portion and the second driving electrode, A second driving connection member that connects the second driving conductive portion and the second driving electrode. Semiconductor laser device.

[0286] (Appendix 2) The semiconductor laser device includes a terminal conductive portion that constitutes a terminal of the semiconductor laser device. The terminal conductive portion A first terminal conductive portion for connecting to the negative electrode of a power supply that supplies power to the semiconductor laser device, A second terminal conductive portion for connecting to an input electrode of a driver circuit that applies a voltage to the control electrode of the switching element. The first driving conductive portion is electrically connected to the first terminal conductive portion. The second driving conductive portion is electrically connected to the second terminal conductive portion. The semiconductor laser device according to Appendix 1.

[0287] (Appendix 3) The semiconductor laser element, the switching element, and the second driving conductive portion are arranged in a predetermined first direction in a plan view of the semiconductor laser device. In the plan view, the first driving conductive portion is arranged in a second direction orthogonal to the first direction with respect to the switching element. The semiconductor laser device according to Appendix 1 or 2.

[0288] (Appendix 4) In the first direction, the second driving conductive portion is arranged on the side opposite to the semiconductor laser element with respect to the switching element. The semiconductor laser device according to Appendix 3.

[0289] (Appendix 5) The semiconductor laser element is arranged at the central portion in the second direction. The semiconductor laser device according to Appendix 3 or 4.

[0290] (Appendix 6) The capacitor is arranged closer to the semiconductor laser element than the switching element in the first direction. The semiconductor laser device according to any one of Appendices 3 to 5.

[0291] (Appendix 7) A plurality of the capacitors are provided. The semiconductor laser device according to any one of Appendices 1 to 6.

[0292] (Appendix 8) A plurality of the capacitors are provided and arranged on both sides of the switching element in the second direction, The first driving conductive part is arranged on both sides of the switching element in the second direction. The semiconductor laser device according to any one of Appendices 3 to 6.

[0293] (Appendix 9) A plurality of the semiconductor laser elements are provided and arranged in the second direction. The semiconductor laser device according to any one of Appendices 3 to 6.

[0294] (Appendix 10) The electrodes of the semiconductor laser elements adjacent to each other in the second direction are electrically connected to each other by an element connection member. The semiconductor laser device according to Appendix 9.

[0295] (Appendix 11) The semiconductor laser element has a plurality of semiconductor light emitting layers arranged in the second direction, The plurality of semiconductor light emitting layers are connected to each other by one electrode. The semiconductor laser device according to any one of Appendices 3 to 6 or Appendix 8 or 9.

[0296] (Appendix 12) It has a third driving conductive part to which the first driving electrode of the switching element is connected, The semiconductor laser element is connected to the third driving conductive part. The semiconductor laser device according to any one of Supplementary Notes 1 to 11.

[0297] (Supplementary Note 13) having a fourth driving conductive part to which the second terminal of the capacitor is connected, in a plan view of the semiconductor laser device, the semiconductor laser element, the switching element, and the second driving conductive part are arranged in a predetermined first direction, the fourth driving conductive part is arranged in the first direction with respect to the first driving conductive part The semiconductor laser device according to any one of Supplementary Notes 1 to 12.

[0298] (Supplementary Note 14) The semiconductor laser device includes a control conductive part that is arranged separately from each of the first driving conductive part and the second driving conductive part and is electrically connected to the control electrode, and a control connection member that connects the control electrode and the control conductive part. the control connection member and the second driving connection member are adjacent to each other The semiconductor laser device according to any one of Supplementary Notes 1 to 13.

[0299] (Supplementary Note 15) the control conductive part and the second driving conductive part are adjacent to each other The semiconductor laser device according to Supplementary Note 14.

[0300] (Supplementary Note 16) The semiconductor laser device includes a support substrate having a substrate main surface and a substrate back surface facing the opposite side of the substrate main surface in a direction perpendicular to the substrate main surface, at least the first driving conductive part is formed on the substrate main surface, a terminal conductive part constituting a terminal of the semiconductor laser device is formed on the substrate back surface The semiconductor laser device according to any one of Supplementary Notes 1 to 15.

[0301] (Supplementary Note 17) The conductive portion for the terminal a first conductive portion for the terminal for connecting to the negative electrode of a power supply that supplies power to the semiconductor laser device; a second conductive portion for the terminal for connecting to an input electrode among driver circuits that apply a voltage to the control electrode of the switching element; a third conductive portion for the terminal for connecting to the first drive electrode of the switching element, and includes: the first conductive portion for the terminal is arranged separated from the third conductive portion for the terminal The semiconductor laser device according to Supplementary Note 16.

[0302] (Supplementary Note 18) The semiconductor laser device includes a third drive conductive portion to which the first drive electrode of the switching element is connected, the conductive portion for the terminal has a third conductive portion for the terminal that is electrically connected to the third drive conductive portion, the first conductive portion for the terminal and the third conductive portion for the terminal are integrated The semiconductor laser device according to Supplementary Note 17.

[0303] (Supplementary Note 19) having a connecting portion that conducts the first drive conductive portion, the second drive conductive portion, and the conductive portion for the terminal The semiconductor laser device according to any one of Supplementary Notes 16 to 18.

[0304] (Supplementary Note 20) The semiconductor laser device includes a sealing member that seals the semiconductor laser element, the switching element, the capacitor, the first drive conductive portion, the second drive conductive portion, the first drive connection member, and the second drive connection member and has a portion that transmits the laser light of the semiconductor laser element The semiconductor laser device according to any one of Supplementary Notes 1 to 19.

[0305] (Supplementary Note 21) a semiconductor laser element; A switching element that is connected in series to the semiconductor laser element, has a control electrode, a first drive electrode, and a second drive electrode, and controls the current flowing through the semiconductor laser element according to the voltage applied to the control electrode; A capacitor connected in parallel to the semiconductor laser element and the switching element; A first drive conductive part to which a first terminal of the capacitor is connected; The first drive conductive part has a first end to which a first terminal of the capacitor is connected, and a second end provided on the side opposite to the first end in the direction in which the first drive conductive part extends; A first drive connection member that connects the side of the first drive conductive part close to the first terminal of the capacitor to the second drive electrode; A second drive connection member that connects the side of the first drive conductive part closer to the second end than the first terminal of the capacitor to the second drive electrode; Comprising Semiconductor laser device.

[0306] (Appendix 22) The semiconductor laser element has an element main surface and an element back surface facing opposite sides; The second drive electrode and the control electrode are each formed on the element main surface; The control electrode is arranged on the side farther from the first drive conductive part with respect to the second drive electrode; The semiconductor laser device according to Appendix 21.

[0307] (Appendix 23) The position where the second drive connection member is connected to the second drive electrode is closer to the control electrode than the position where the first drive connection member is connected to the second drive electrode among the second drive electrodes; The semiconductor laser device according to Appendix 21 or 22.

[0308] (Appendix 24) The semiconductor laser device includes a sealing member that seals the semiconductor laser element, the switching element, the capacitor, the first driving conductive part, the first driving connection member, and the second driving connection member, and has a portion that transmits the laser light of the semiconductor laser element. The semiconductor laser device according to any one of Appendices 21 to 23.

[0309] (Appendix 25) A semiconductor laser element, A switching element that is connected in series to the semiconductor laser element, has a control electrode, a first driving electrode, and a second driving electrode, and controls the current flowing through the semiconductor laser element according to the voltage applied to the control electrode. A capacitor that is connected in parallel to the semiconductor laser element and the switching element. A first driving conductive part to which the first terminal of the capacitor is connected. A driver circuit that applies a voltage to the control electrode of the switching element. A first driving connection member that connects the first driving conductive part and the second driving electrode. A second driving connection member that connects the driver circuit and the second driving electrode. A semiconductor laser device.

[0310] (Appendix 26) The semiconductor laser element and the switching element are arranged in a predetermined first direction in a plan view of the semiconductor laser device. The first driving conductive part is arranged in a second direction orthogonal to the first direction in the plan view with respect to the switching element. The driver circuit is arranged on the side opposite to the side where the semiconductor laser element is arranged with respect to the switching element in the first direction. The semiconductor laser device according to Appendix 25.

[0311] (Appendix 27) The semiconductor laser element and the switching element are arranged in a predetermined first direction in a plan view of the semiconductor laser device. The first driving conductive part is arranged in a second direction orthogonal to the first direction in the plan view with respect to the switching element. The driver circuit is arranged on the side opposite to the side where the first driving conductive part is arranged with respect to the switching element in the second direction. The semiconductor laser device according to appended note 25.

[0312] (Appended note 28) The second driving connection member is connected to the side of the second driving electrode on the driver circuit side. The semiconductor laser device according to any one of appended notes 25 to 27.

[0313] (Appended note 29) The driver circuit is formed as a chip having a main surface and a back surface facing each other. On the main surface, an input electrode to which the second driving connection member is connected and an output electrode electrically connected to the control electrode are formed. The control electrode and the output electrode are connected by a control connection member. When viewed from a direction perpendicular to the main surface, the input electrode and the output electrode are adjacent to each other. The semiconductor laser device according to any one of appended notes 25 to 28.

[0314] (Appended note 30) The semiconductor laser device includes a sealing member that seals the semiconductor laser element, the switching element, the capacitor, the first driving conductive part, the driver circuit, the first driving connection member, and the second driving connection member and has a portion that transmits the laser light of the semiconductor laser element. The semiconductor laser device according to any one of appended notes 25 to 29.

[0315] (Appended note 31) The first driving connection member and the second driving connection member are each made of a wire. The semiconductor laser device according to any one of Appendices 1 to 30.

[0316] (Appendix 32) The first driving connection member is made of a plurality of wires. The second driving connection member is made of one wire. The semiconductor laser device according to Appendix 31.

[0317] (Appendix 33) The wire diameter of the first driving connection member and the wire diameter of the second driving connection member are equal to each other. The semiconductor laser device according to Appendix 31 or 32.

[0318] (Appendix 34) The switching element has an element main surface and an element back surface facing opposite sides. The second driving electrode and the control electrode are each formed on the element main surface. The first driving electrode is formed on the element back surface. The semiconductor laser device according to any one of Appendices 1 to 33.

[0319] (Appendix 35) The switching element has an element main surface and an element back surface facing opposite sides. The first driving electrode, the second driving electrode, and the control electrode are each formed on the element main surface. The semiconductor laser device according to any one of Appendices 1 to 33.

[0320] (Appendix 36) The semiconductor laser element and the switching element are arranged in a predetermined first direction in a plan view of the semiconductor laser device. The first driving electrode is disposed on the element main surface on the semiconductor laser element side in the first direction. The second drive electrode and the control electrode are arranged on the side of the element main surface opposite to the semiconductor laser element side in the first direction. The semiconductor laser device according to Supplementary Note 35.

[0321] (Supplementary Note 37) The semiconductor laser device includes a support substrate provided between a substrate main surface on which the first drive conductive portion is formed, a substrate back surface facing the opposite side of the substrate main surface in the thickness direction, and having a substrate side surface extending in a direction intersecting the substrate main surface and the substrate back surface; a terminal conductive portion formed on the substrate back surface and constituting a terminal of the semiconductor laser device; and a connection portion connecting the first drive conductive portion and the terminal conductive portion. A recess recessed inward from the substrate side surface is provided on the substrate side surface. The connection portion is provided in the recess. The semiconductor laser device according to any one of Supplementary Notes 1 to 36.

[0322] (Supplementary Note 38) The semiconductor laser element is capable of emitting laser light with a pulse width of 10 ns or less. The semiconductor laser device according to any one of Supplementary Notes 1 to 37.

[0323] (Supplementary Note 39) A semiconductor laser element; a switching element connected in series to the semiconductor laser element, having a control electrode, a first drive electrode, and a second drive electrode, and controlling a current flowing through the semiconductor laser element according to a voltage applied to the control electrode; a capacitor connected in parallel to the semiconductor laser element and the switching element; a first drive conductive portion to which a first terminal of the capacitor is connected; and a second drive conductive portion disposed apart from the first drive conductive portion. The semiconductor laser device is provided with A semiconductor laser device in which a first path of a current flowing from the second drive electrode to the first drive conductive portion and a second path of a current flowing from the second drive electrode to the second drive conductive portion are separately formed.

Explanation of Signs

[0324] 1A, 1B, 1C, 1D, 1E… Semiconductor laser device 10, 10A, 10B, 10C… Semiconductor laser element 14, 14A, 14B… Semiconductor light emitting layer 17… Contact electrode (one electrode) 20, 20A… Switching element 21… Drain electrode (first drive electrode) 22, 22A, 22B… Source electrode (second drive electrode) 23… Gate electrode (control electrode) 24a… Main element surface 24b… Back element surface 30, 30A, 30B… Capacitor 31… First terminal 32… Second terminal 42… Second power terminal (power terminal for connecting to the negative electrode of the power supply) 45… Driver connection terminal (connection terminal) 50… Support substrate 51… Base material 51a… Main surface of the base material (main surface of the substrate) 51b… Back surface of the base material (back surface of the substrate) 51c… First side surface of the base material (side surface of the substrate) 51d… Second side surface of the base material (side surface of the substrate) 51e… Third side surface of the base material (side surface of the substrate) 51f… Fourth side surface of the base material (side surface of the substrate) 53A, 53B… Recess 54A, 54B, 54C… Recess 55A, 55B, 55C… Recess 60… Conductive portion 60B… Back surface side conductive portion (conductive portion for terminal) 60C… Connecting portion 60D… Side surface connecting portion (connecting portion) 61, 61A, 61B… First drive conductive portion 61a…First end 61b…Second end 62…Second drive conductive part 63…Third drive conductive part 64, 64A, 64B…Fourth drive conductive part 65…Control conductive part 66, 66A, 66B…First terminal conductive part 67…Second terminal conductive part 68, 68A, 68B…Third terminal conductive part 81, 81A, 81B, 82…First drive connection member 81C…First drive connection member (second drive connection member) 83…Second drive connection member 84…Control connection member 87…Element connection member 90…Sealing member 110…Power supply 111…Positive electrode 112…Negative electrode 140…Driver circuit 141…Output electrode 142…Input electrode 143…Sealing member 143a…Sealing main surface (main surface of driver circuit) 144c…Output electrode 144d…Input electrode X…Horizontal direction (second direction) Y…Vertical direction (first direction)

Claims

1. A substrate having a first surface, a first semiconductor laser element mounted on the first surface, a switching element mounted on the first surface for controlling a current flowing through the first semiconductor laser element, a first capacitor mounted on the first surface, comprising: the first semiconductor laser element is connected in series with the switching element, the first capacitor is connected in parallel with the first semiconductor laser element and the switching element, when viewed from a first direction parallel to the first surface, the first semiconductor laser element overlaps the switching element, when viewed from a second direction parallel to the first surface and orthogonal to the first direction, the first capacitor overlaps at least one of the first semiconductor laser element and the switching element, a semiconductor laser device.

2. the substrate includes a first conductive portion, and the first semiconductor laser element and the switching element are mounted on the first conductive portion, the semiconductor laser device according to Claim 1.

3. the substrate includes a second conductive portion and a third conductive portion disposed apart from the first conductive portion, and the first capacitor is mounted on the second conductive portion and the third conductive portion, the semiconductor laser device according to Claim 2.

4. further comprising a second capacitor, and when viewed from the first direction, the switching element is located between the first capacitor and the second capacitor, the semiconductor laser device according to any one of Claims 1 to 3.

5. further comprising a second capacitor, and when viewed from the first direction, the first semiconductor laser element is located between the first capacitor and the second capacitor, the semiconductor laser device according to any one of Claims 1 to 3.

6. the switching element has a control electrode, a first drive electrode, and a second drive electrode, and controls a current flowing through the first semiconductor laser element according to a voltage applied to the control electrode, the semiconductor laser device according to any one of Claims 1 to 5.

7. the first semiconductor laser element has an element main surface and an element back surface facing opposite sides, the first drive electrode, the second drive electrode, and the control electrode are each formed on the element main surface, the semiconductor laser device according to Claim 6.

8. the first semiconductor laser element has an element main surface and an element back surface facing opposite sides, The second drive electrode and the control electrode are each formed on the main surface of the element. The first drive electrode is formed on the back surface of the element. The semiconductor laser device according to claim 6.

9. The first semiconductor laser element is disposed at the central portion in the second direction. The semiconductor laser device according to any one of claims 1 to 8.

10. When viewed from the second direction, an end portion of the switching element on the first semiconductor laser element side overlaps with the first capacitor. The semiconductor laser device according to any one of claims 1 to 9.

11. When viewed from the second direction, an end portion of the first semiconductor laser element on the switching element side overlaps with the first capacitor. The semiconductor laser device according to any one of claims 1 to 10.

12. Further comprising a second semiconductor laser element, and when viewed from the second direction, the first semiconductor laser element and the second semiconductor laser element overlap with each other. The semiconductor laser device according to any one of claims 1 to 11.

13. The first semiconductor laser element has a plurality of semiconductor light emitting layers arranged in the second direction. The plurality of semiconductor light emitting layers are connected to each other by one electrode. The semiconductor laser device according to any one of claims 1 to 12.

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