Method for correcting image formation state in spatial frequency domain

Abstract

To enhance manufacturability of transfer / lithography technology step of device and circuit pattern in a semiconductor device manufacturing.SOLUTION: A transparent panel disposed in the vicinity of an aperture diaphragm of an imaging lens is divided into several parts in a rotation direction so as to set up (a) a domain causing no effect which is denoted by 401, (b) a domain where transmittance is adjusted for each of a low frequency part and a high frequency part (so-called one kind of pupil apodization) which is denoted by 402, (c) a domain where a phase difference is adjusted for each of the low frequency part and the high frequency part (a refractive index is controlled by local doping) which is denoted by 403, and (d) a domain of a combination of these.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] Techniques for transferring and lithographing device and circuit patterns in semiconductor device manufacturing.

Prior Art Documents

Patent Documents

[0002] Japanese Patent Application Laid-Open No. 2016-42192 (P2016-42192A) Japanese Patent Application Laid-Open No. 2014-75610 (P2014-75610A) Japanese Patent Application Laid-Open No. 2010-535423 (P2010-535423A) Japanese Patent Application Laid-Open No. 2008-181125 (P2008-181125A)

Summary of the Invention

Problems to be Solved by the Invention

[0003] In the techniques and processes of transferring and lithographing device and circuit patterns in semiconductor device manufacturing, it is an object to improve the ease of manufacturing. Specifically, even after installing an exposure apparatus in a semiconductor device process, a new means for adjusting the transfer and imaging state of a mask pattern is provided, aiming to contribute to shortening the rapid TAT and increasing the Yield of semiconductor devices, and further to continuous stable production.

Means for Solving the Problems

[0004] In lithographic projection exposure for semiconductor device patterning, many of the actual mask patterns of current devices and wirings are arranged "vertically and horizontally". Therefore, when considering the spatial frequency region on the imaging lens (exit) pupil, almost all signals are arranged "along the ξ-axis and η-axis". Even in the prior art, techniques such as performing phase difference correction on a transmission flat plate arranged near the aperture stop and then replacing it to adjust the aberration of the entire imaging lens have been carried out. However, in the present invention, considering the above spatial frequency characteristics, the transmission flat plate is "divided into several parts in the rotation direction", and a. regions that have no effect, b. regions for adjusting the transmittance by dividing into low-frequency and high-frequency parts (a kind of so-called pupil apodization), c. regions for adjusting the phase difference by dividing into low-frequency and high-frequency parts (controlling the refractive index by local doping), and d. regions of combinations thereof are provided, so that it is possible to "perform only rotation" to adjust the imaging state (mainly to relieve the critical points through trade-offs with other mask locations) without replacing the member. Also, by preparing in advance a plurality of combinations of the strength of transmittance adjustment and the strength of phase difference adjustment, and replacing the member, further fine tuning of the imaging state becomes possible.

Advantages of the Invention

[0005] By increasing the means for adjusting the imaging state, it becomes possible to shorten the rapid TAT of semiconductor devices, increase the yield, and further lead to continuous stable production.

Brief Description of the Drawings

[0006]

Figure 1

Figure 2

Figure 3

Figure 4

Industrial Applicability

[0007] When considering this method in the design of a novel imaging lens, it becomes possible to increase the final adjustment means (adjustment knob) for the imaging state even after installing the exposure apparatus at the semiconductor device manufacturing site.

Claims

1. By making use of the spatial frequency characteristics of the current mask pattern, dividing the transmissive parallel flat plate arranged near the aperture stop in the rotational direction, and providing differences and corrections in transmittance and phase difference in the low spatial frequency region and the high spatial frequency region, a method that enables adjustment of the imaging state without replacing the member.

2. The method according to claim 1, wherein by preliminarily providing a plurality of combinations of the strengths of transmittance correction and phase difference correction, it is possible to further fine-tune the imaging state.

Images