Display

Abstract

To provide an electronic apparatus that can operate a three-dimensional movement, and to provide an electronic apparatus that can perform various operations with a simple operation.SOLUTION: A display has a control unit, a display unit, and a detection unit. The display unit has a screen for displaying an image, and the detection unit has a function to acquire position information of an object to be detected that is in contact with the screen or in proximity above the screen and output the information to the control unit. The control unit has a function to execute first processing on the basis of first operation, a function to execute second processing when second operation is performed in continuation with the first operation, and a function to execute third processing when third operation is performed in continuation with the second operation. The first operation is operation by which two indication positions are detected on the screen. The second operation is operation by which the two indication positions move so as to reduce the distance therebetween. The third operation is operation by which the two indication positions move in the normal direction relative to the screen from the state where the indication positions are in contact with the screen.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to an electronic device. One aspect of the present invention relates to a display device. One aspect of the present invention relates to a program.

[0002] Note that one aspect of the present invention is not limited to the above technical field. Examples of the technical field of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, electronic devices, lighting devices, input devices (for example, touch sensors, etc.), input / output devices (for example, touch panels, etc.), their driving methods, or their manufacturing methods.

Background Art

[0003] Many information terminal devices such as mobile phones like smartphones and tablet-type information terminals are equipped with functions to execute various processes with simple operations. For example, the display is provided with a touch sensor that detects a contacting object, and by touching the surface of the display with a fingertip or the like and performing various operations, it is possible to easily move, enlarge, reduce, etc. the position of an object displayed on the display.

[0004] Patent Document 1 discloses an electronic device provided with a touch sensor.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] The touch sensors widely used in information terminal devices have been limited to planar operations within the display.

[0007] An object of one embodiment of the present invention is to provide an electronic device capable of controlling three-dimensional movement. Another object of one embodiment of the present invention is to provide an electronic device that can perform various operations with simple operations. Another object of one embodiment of the present invention is to provide an electronic device that can be intuitively operated. Another object of one embodiment of the present invention is to provide a novel electronic device.

[0008] Note that the description of these problems does not preclude the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Problems other than these can be extracted from the description of the specification, drawings, and claims. [Means for solving the problem]

[0009] One embodiment of the present invention is a display device having a control unit, a display unit, and a detection unit. The display unit has a screen for displaying an image. The detection unit has a function of acquiring contact information on the screen or position information of a detectable object approaching in a normal direction of the screen, and outputting the information to the control unit. The control unit has a function of executing a first process when a first operation is performed, a function of executing a second process when a second operation is performed consecutively to the first operation, and a function of executing a third process when a third operation is performed consecutively to the second operation. The first operation is an operation in which two designated positions in contact with the screen are detected, the second operation is an operation in which the two designated positions move so that the distance between them becomes smaller, and the third operation is an operation in which the two designated positions move in a normal direction to the screen from a state in which they are in contact with the screen.

[0010] The first process is a process for determining a selection range within the screen, the second process is a process for selecting an object located within the selection range, and the third process is a process for picking up the object.

[0011] In the above, the control unit may further have a function of executing a fourth process when a fourth operation is performed after the third operation. The fourth operation is an operation in which two designated positions come into contact with the screen. Also, in the above, the control unit may further have a function of executing a fifth process when a fifth operation is performed after the third operation. The fifth operation is an operation in which two designated positions move until the height from the screen exceeds a threshold value. Also, in the above, the control unit may further have a function of executing a sixth process when a sixth operation is performed after the third operation. The sixth operation is an operation in which, in a state where the height from the screen is smaller than the threshold value and not in contact with the screen, the distance between two designated positions increases.

[0012] In the above, it is preferable that the control unit further has a function of executing a seventh process when a seventh operation is performed continuously after the third operation. The seventh operation is an operation in which two designated positions move within a range where the height from the screen is smaller than the threshold value and not in contact with the screen.

[0013] The above fourth process is a process of canceling the selection of an object on the screen at the two designated positions in contact with the screen. Also, the fifth process is a process of canceling the selection of an object at the two-dimensional position on the screen when the height of the two designated positions from the screen exceeds the threshold value, or at the two designated positions in contact with the screen in the third operation. Also, the sixth process is a process of canceling the selection of an object at the two-dimensional position on the screen when the distance between the two designated positions increases, or at the two designated positions in contact with the screen in the third operation.

[0014] In the above, the display unit has a light-emitting element. Also, the detection unit has a photoelectric conversion element. The light-emitting element and the photoelectric conversion element are preferably provided on the same surface. Also, the detection unit preferably has a touch sensor of a capacitance method, a surface acoustic wave method, a resistive film method, an ultrasonic method, an electromagnetic induction method, or an optical method.

[0015] Another aspect of the present invention is a display module having any one of the above display devices and a connector or an integrated circuit.

[0016] Another aspect of the present invention is an electronic device having the above display module and at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button.

Advantages of the Invention

[0017] According to one aspect of the present invention, an electronic device capable of detecting three-dimensional movement can be provided. Alternatively, an electronic device capable of executing various processes with a simple operation can be provided. Alternatively, an electronic device capable of intuitive operation can be provided. Alternatively, a novel electronic device can be provided.

[0018] Note that the description of these effects does not prevent the existence of other effects. One aspect of the present invention does not necessarily have all of these effects. It is possible to extract other effects from the description of the specification, drawings, and claims.

Brief Description of the Drawings

[0019]

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[0020] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that the form and details thereof can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments shown below.

[0021] In the configuration of the invention described below, the same reference numerals are commonly used among different drawings for the same part or parts having the same or similar functions, and the repeated description thereof will be omitted. In addition, when referring to similar functions, the hatching patterns may be the same, and in some cases, no reference numerals may be attached.

[0022] In addition, in the drawings, the positions, sizes, ranges, etc. of the respective configurations shown may not represent the actual positions, sizes, ranges, etc. for the sake of easy understanding. Therefore, the disclosed invention is not necessarily limited to the positions, sizes, ranges, etc. disclosed in the drawings.

[0023] Note that the terms "film" and "layer" can be interchanged with each other depending on the case or the situation. For example, the term "conductive layer" can be changed to the term "conductive film". Or, for example, the term "insulating film" can be changed to the term "insulating layer".

[0024] (Embodiment 1) In the present embodiment, a configuration example and an operation method of an electronic device according to an aspect of the present invention will be described with reference to FIGS. 1A to 12B.

[0025] In the drawings attached to this specification, the components are classified by function and shown as independent blocks in a block diagram. However, in reality, it is difficult to completely separate the components by function, and one component may be related to multiple functions. Or, one function may be realized by multiple components.

[0026] An electronic device according to one aspect of the present invention can detect contact with and proximity to the screen of a detected object. That is, it can detect position information (X, Y) which is coordinates parallel to the screen and position information (Z) which is the height from the screen, respectively. As a result, three-dimensional operations become possible, and for example, it becomes possible to display an object displayed on a display so as to move it three-dimensionally.

[0027] [Configuration example of electronic device] FIG. 1A shows a block diagram of a device 10 according to one aspect of the present invention. The device 10 includes a control unit 11 and a display unit 12. The display unit 12 includes a detection unit 21. The device 10 can be used as an electronic device such as an information terminal device.

[0028] The display unit 12 has a function of displaying an image and a function of detecting contact with and proximity to the screen of a detected object. Here, contact indicates a state where the detected object is touching the screen, and proximity indicates a state where the detected object is located near the screen without touching the screen within the detection range of the sensor. Here, an example is shown in which the display unit 12 includes a detection unit 21. The detection unit 21 is a part that undertakes the function of detecting contact with and proximity to the screen of a detected object among the above functions of the display unit 12. The display unit 12 can also be referred to as a touch panel. For example, a display device described in detail in Embodiment 2 can be used for the display unit 12. In this way, the device 10 can detect two pieces of information, contact with and proximity to the screen of a detected object, with one detection unit 21, which is preferable because the member cost and manufacturing cost of the device 10 can be reduced.

[0029] The detection unit 21 has a function of outputting the two-dimensional on-screen position information (X, Y) of the detected object for which contact has been detected and the three-dimensional on-screen position information (X, Y, Z) of the detected object for which proximity has been detected to the control unit 11. Here, Z is the distance (height) in the normal direction with respect to the detection surface (screen). The origin (reference point) of the on-screen position information (X, Y) may be set at an arbitrary position, for example, at a corner or the center of the screen. Also, the origin (reference point) of the coordinate Z may be set as the surface of the screen, that is, it is sufficient to use height 0 as the reference point.

[0030] In FIG. 1A, an example in which the display unit 12 includes the detection unit 21 is shown, but these may be provided separately. That is, a configuration in which the screen and the operation unit are separated can be adopted. In this case, examples of the detection unit 21 include a touch pad that does not have an image display function.

[0031] Also, the control unit 11 can function as, for example, a central processing unit (CPU). The control unit 11 interprets and executes instructions from various programs by a processor, thereby performing various data processes and program controls. Also, for example, the control unit 11 can control the movement of an object within the screen, the change of display, etc. by processing the signal from the detection unit 21.

[0032] Also, as the detection unit 21, a touch sensor capable of detecting positions in contact and non-contact states can be used. For example, touch sensors of various methods such as a capacitance method, a surface acoustic wave method, a resistive film method, an ultrasonic method, an infrared method, an electromagnetic induction method, or an optical method can be used.

[0033] Also, FIG. 1B shows a block diagram of the device 20 according to one aspect of the present invention. The device 20 includes a control unit 11 and a display unit 12. The display unit 12 includes a detection unit 22 and a detection unit 23. The device 20 can be used as an electronic device such as an information terminal device.

[0034] The display unit 12 has a function of displaying an image and a function of detecting contact with and proximity to the screen of the detected object. Here, an example is shown in which the display unit 12 includes a detection unit 22 and a detection unit 23. The detection unit 22 is a part that undertakes the function of detecting contact of the detected object with the screen among the above functions of the display unit 12. Further, the detection unit 23 is a part that undertakes the function of detecting proximity of the detected object to the screen among the above functions of the display unit 12. The display unit 12 can also be referred to as a touch panel. For example, a display device described in detail in Embodiment 2 can be used for the display unit 12. In this way, the device 20 has a detection unit 22 for detecting contact of the detected object with the screen, a detection unit 23 for detecting proximity of the detected object to the screen, and two detection units, so that the detection accuracy of each of contact and proximity can be increased, and more accurate operation becomes possible, which is preferable.

[0035] The detection unit 22 has a function of acquiring the two-dimensional position information (X, Y) of the contacted detected object on the screen and outputting it to the control unit 11. Further, the detection unit 23 has a function of acquiring the three-dimensional position information (X, Y, Z) of the approximated detected object and outputting it to the control unit 11. Here, Z is the distance in the normal direction with respect to the detection surface (screen).

[0036] In FIG. 1B, an example is shown in which the display unit 12 includes the detection unit 22 and the detection unit 23, but the detection unit 22 and the detection unit 23 may be provided separately. That is, a configuration in which the screen and the operation unit are separated can be adopted. In this case, examples of the detection unit 22 and the detection unit 23 include a touch pad that does not have an image display function.

[0037] The control unit 11 can control, for example, the movement of an object within the screen, the change of display, etc. by processing signals from the detection unit 22 and the detection unit 23.

[0038] Further, as the detection units 22 and 23, touch sensors capable of detecting positions in contact and non-contact states may be used respectively. For example, touch sensors of various methods such as the capacitance method, surface acoustic wave method, resistive film method, ultrasonic method, infrared method, electromagnetic induction method, or optical method can be used respectively.

[0039] [Operation Examples of Device 10 and Device 20] Hereinafter, an example of the operation of the device 10 and the device 20 will be described with reference to FIGS. 2A to 8B. The device 10 detects contact and proximity of the detected object by the detection unit 21, selects an object (for example, an icon or the like) displayed on the screen, and can move the selected object to an arbitrary position within the screen. Further, the device 20 detects contact of the detected object by the detection unit 22 and detects proximity of the detected object by the detection unit 23, selects an object (for example, an icon or the like) displayed on the screen, and can move the selected object to an arbitrary position within the screen. Specifically, it is possible to execute operations of selecting an object on the screen, pinching the selected object, lifting the pinched object, moving the object, and lowering the object.

[0040] In the present embodiment, operations such as pinching, lifting, moving, and lowering an object refer to display processing within the screen of the display unit 12. For example, "pinching an object" refers to a process of displaying as if pinching the object, "lifting" refers to a process of displaying as if lifting the pinched object, "moving" refers to a process of displaying so as to move within the screen, and "lowering" refers to a process of displaying so as to lower the lifted object from above the screen onto the screen.

[0041] [Pinch] First, the "pinch" operation will be described using two fingers. Here, an example using the index finger and the thumb as the two fingers will be described, but any two fingers can be used.

[0042] Also, the device can detect the coordinates of the fingertips of two fingers, and these coordinates may be referred to as the instruction positions. For example, when the fingertip is in contact with the screen, the coordinates corresponding to the contact part are equivalent to the instruction position. Also, when the fingertip is not in contact with the screen, the coordinates of the point closest to the screen from the fingertip, or the coordinates of the peak position of the detection intensity based on the fingertip, can be set as the instruction position.

[0043] As shown in FIG. 2A, first, a part of the fingertip of the index finger and a part of the fingertip of the thumb are brought into contact with coordinates A1 and coordinates B1 on the screen respectively. Next, as shown in FIG. 2B, with the two fingertips in contact with the screen, they are respectively moved to the positions of coordinates A2 and coordinates B2 so as to bring the fingertips closer to each other. In FIG. 2B, coordinates A2 and coordinates B2 are separated, but as shown in FIG. 2C, they may be moved so as to touch each other's fingers. In this case, coordinates A2 and coordinates B2 come into close contact. Incidentally, instead of bringing a part of the fingertip of the index finger and a part of the fingertip of the thumb into contact with coordinates A1 and coordinates B1 on the screen, they may be brought into contact with coordinates A2 and coordinates B2 from the beginning. The above is the pinching operation.

[0044] Note that the series of operations shown in FIGS. 2A to 2C may not be distinguishable from so-called pinch-in. Therefore, when a process associated with pinch-in (such as screen reduction) is separately set, when performing the pinching operation, it is preferable to temporarily invalidate the pinch-in input. For example, an icon image associated with a process of temporarily turning on and off the pinch-in function on the screen may be displayed. Or, after holding for a certain period of time (also called a long tap) at the time of FIG. 2A, an operation of moving the fingertip etc. may be used to distinguish it from pinch-in.

[0045] [Selection of Object] Here, a method for selecting an object will be described. In FIG. 3A, a plurality of objects 100 displayed on the display unit 12 are shown as rounded rectangles. The rectangular frame of the dashed line is a rectangle with coordinates A1 and coordinates B1 as diagonals, and the object 100 that is at least partially included therein is selected. In FIG. 3A, the selected object is shown by a solid line, and the unselected object is shown by a dotted line.

[0046] Also, as shown in FIG. 3B, the object 100 that is entirely included in the rectangle with coordinates A1 and coordinates B1 as diagonals may be selected. In FIG. 3B, the object 100 that overlaps the dashed line is unselected.

[0047] Also, as shown in FIG. 3C, the object 100 that overlaps either of the two lines connecting coordinates A1 and coordinates A2, and coordinates B1 and coordinates B2 may be selected. That is, the object located on the locus corresponding to the movement of the finger may be selected. In FIG. 3C, the object 100 that overlaps the arrow connecting coordinates A1 and coordinates A2 and the object 100 that overlaps the arrow connecting coordinates B1 and coordinates B2 are selected.

[0048] Also, as shown in FIG. 4A, the object 100 that is at least partially included in the rectangle with coordinates A2 and coordinates B2 as diagonals after the pinching operation may be selected. In FIG. 4A, two objects 100 are selected. In this way, since the area of the rectangle becomes smaller, the objects to be selected can be narrowed down.

[0049] Also, as shown in FIG. 4B, the object 100 that is entirely included in the rectangle with coordinates A2 and coordinates B2 as diagonals after the pinching operation may be selected. In FIG. 4B, one object 100 is selected. In this way, the area of the rectangle becomes even smaller, and the intended object can be accurately selected.

[0050] Also, when the index finger and the thumb are in contact, as shown in Fig. 4C, when coordinates A2 and coordinates B2 are in close proximity, only the object 100 that overlaps both the coordinates A2 and coordinates B2 may be selected. This enables accurate selection of the intended object. Alternatively, even if the intended object is small, it can be accurately selected. Also, when a part of the index finger and a part of the thumb are initially brought into contact with coordinates A2 and coordinates B2 without passing through coordinates A1 and coordinates B1, it is also possible to select the object in the same manner as Figs. 4A to 4C. The above is the explanation of the object selection method.

[0051] [Lift up by pinching] The "lift up by pinching" operation after pinching will be described. Figs. 5A to 5C are schematic cross-sectional views seen in the direction indicated by arrow 50 in Fig. 2B. Fig. 5A shows the state where the index finger in contact with coordinate A1 and the thumb in contact with coordinate B1 are each moved to the positions of coordinates A2 and coordinates B2 so as to approach each other, the object is selected, and it is the figure at the pinched position.

[0052] Next, as shown in Fig. 5B, an operation is performed to lift up a part of the index finger and a part of the thumb that were in contact with the screen in the upward (normal direction). At this time, as a part of the index finger and a part of the thumb move away from the screen, the object is displayed as being lifted up by pinching. As the lifted-up display, the pinched object is displayed as being lifted up (floating) in the normal direction within the screen. Also, as the lifted-up display, other displays may be set. For example, as the lifted-up display, the color of the object may be changed, or the size of the object may be made smaller. Also, the shape of the object may be changed.

[0053] Operations such as separating from the screen from a state where a part of the index finger and a part of the thumb are in contact with the screen can be detected, for example, by the detection position by the screen contact sensor (the detection unit 21 or the detection unit 22) disappearing. Further, when the device 10 or the device 20 can acquire three-dimensional position information on the screen, it is preferable to set in advance the height (referred to as the lower threshold Th1) of the detected object considered to be in contact, and consider that the detected object has separated from the screen when the lower threshold Th1 is exceeded. More specifically, when the height H of a part of the index finger and a part of the thumb from the screen surface exceeds the lower threshold Th1, it may be set as a display for picking up the object. By setting the lower threshold Th1 in this way, it is possible to reduce the accidental picking up of the object, which is preferable. That is, when the height H of a part of the index finger and a part of the thumb from the screen surface is equal to or greater than the threshold Th1 and equal to or less than the threshold Th2, it is displayed as if the object is being picked up and lifted. The threshold Th2 represents the upper detection limit in the Z direction.

[0054] As shown in FIG. 5C, when the height H of a part of the index finger and a part of the thumb from the screen surface exceeds the threshold Th2, the object is displayed as if it is falling. At this time, the height of the object just before falling is at the position of the height H, and it is displayed as falling from the height H without rising further. Therefore, if the height H of a part of the index finger and a part of the thumb from the screen surface does not exceed the threshold Th2, the object maintains the display in the lifted state. Further, it is possible to move on the screen while maintaining the state of holding the object.

[0055] [Lower (let fall)] Next, the operation of "lowering (dropping)" will be described. From the state where the object is lifted, as shown in Fig. 5A, a part of the index finger and a part of the thumb are lowered downward and brought into contact with the screen, and a display of lowering the object is shown. Also, as shown in Fig. 5B, from the state where it is lifted to height H, an operation of separating a part of the index finger and a part of the thumb may be performed so that the object is displayed as falling. When the height H exceeds the threshold Th2, when the object 100 falls from the lifted state, it may be displayed so as to be lowered to the XY point when the height H exceeds the threshold Th2. Also, when the object 100 falls from the lifted state, instead of being lowered to the XY point at that position, it may be returned to the XY points (A2 and B2) where the object was first lifted. The above is the explanation of the operation of lifting and lowering the object.

[0056] [Deselecting the Object] The method of deselecting the object will be described. As shown in Fig. 5A, when a part of the index finger and a part of the thumb are lowered downward and brought into contact with the screen to lower the object, the selection of the object is cancelled. Also, when the object is lifted and the height H exceeds the threshold Th2, and when the finger holding the object at height H is released, the object falls and the selection of the object is cancelled. That is, the deselection of the object can be performed by lowering and dropping the object. The above is the explanation of the method of deselecting the object.

[0057] Next, an example of a series of operations of 1) selecting an object, 2) lifting the object, 3) moving the object, and 4) lowering the object will be shown using Figs. 6A to 8B. Here, as the method of selecting the object, the method of accurately selecting the intended object shown in Fig. 4C is used. Also, Figs. 6A to 8B are perspective views of the display unit 12 of the device 10 or the device 20.

[0058] As shown in FIG. 6A, two fingertips (not shown) are brought into contact with coordinates A1 and B1 that sandwich the object 100 on the display unit 12. Next, as shown in FIG. 6B, while keeping contact with the display unit 12, an operation of bringing the pads of the fingers closer to each other is performed to move the two fingertips to coordinates A2 and B2. In the device 10, the detection unit 21 can detect the above operations, and in the device 20, the detection unit 22 can detect them. As a result, the object 100 is selected, that is, the object 100 can be pinched.

[0059] Next, as shown in FIG. 7A, an operation of pinching and lifting is performed from coordinates A2 and B2 to the positions of coordinates A3 and B3 while keeping the pads of the two fingers attached. In the device 10, the detection unit 21 can detect this operation, and in the device 20, the detection unit 23 can detect it. As a result, the object 100 can be pinched and lifted. Here, if the height of pinching and lifting is set as H, the height H is set to be greater than a threshold Th1 (not shown) and less than a threshold Th2. When the height H exceeds the threshold Th2, the pinched object will leave the two fingers and fall. Next, as shown in FIG. 7B, an operation of moving from coordinates A3 and B3 to the positions of coordinates A4 and B4 while keeping the pads of the two fingers attached is performed. In the device 10, the detection unit 21 can detect this operation, and in the device 20, the detection unit 23 can detect it. As a result, the object 100 can be moved. In FIG. 7B, the object is moved linearly, but it is not limited to this. The object 100 may be shaken up and down, left and right. However, if the height H of the pinched object 100 from the screen surface exceeds the threshold Th2, the object will fall.

[0060] Next, as shown in FIG. 8A, with the pads of two fingers still attached, lower from coordinates A4 and B4 to the positions of coordinates A5 and B5 and bring them into contact with the surface of the display unit 12. In device 10, this operation is detected by detection unit 21, and in device 20, it is detected by detection unit 22. As a result, the object 100 can be lowered. Also, as shown in FIG. 8B, if the two fingers are separated before lowering from coordinates A4 and B4 to the positions of coordinates A5 and B5, the object 100 will fall. The operation of separating the fingers at the height of coordinates A4 and B4 can be detected by detection unit 21 in device 10 and detection unit 23 in device 20, respectively. As a result, the object 100 is lowered. As described above, devices 10 and 20 are electronic devices that can operate an object on the screen by intuitive finger operations such as grasping, lifting, moving, and lowering the object.

[0061] [Specific Examples of Applications] Hereinafter, examples of specific applications applicable to the electronic device according to one aspect of the present invention will be described.

[0062] In the following, operations using fingers will be described as examples, but operations can also be performed using detected objects other than fingers. As detected objects other than fingers, for example, in addition to a stylus pen, writing utensils such as a pen, a glass pen, or a quill pen can also be used. In the following examples, the above-described detected objects other than fingers and fingers can be used for operations, or operations can be performed using two detected objects other than fingers. Alternatively, a detected object having two or more detection units can be used. For example, operations can be performed using an instrument such as tweezers, scissors, or chopsticks, where the distance between the two tips changes.

[0063] FIG. 9A shows an example of moving an object 100a such as an icon displayed within the screen of the display unit 12 to an arbitrary position. The user selects the object 100a on the screen by the above-described pinching operation, pinches it up, and then lowers it or drops it at an arbitrary position to move the object 100a such as an icon within the screen.

[0064] Figure 9B shows an example of specifying a destination or a starting point in a map application. The pin-shaped object 100b drawn with a solid line is the object displayed on the screen, and the pin-shaped object 100b drawn with a dotted line is the object that has been picked up. By the picking operation, the user can accurately select the pin-shaped object 100b displayed on the screen and intuitively drop it at any position on the screen. Therefore, the user can easily set the intended location. In Figure 9B, the pin-shaped object 100b in the lower right corner of the screen is picked up and dropped at the destination. Since the devices 10 and 20 have the function of detecting the contact of the detected object, the user can touch the pin-shaped object 100b with a finger and switch the setting of the destination or the starting point, etc.

[0065] Figure 10A shows an example of turning pages in an application of an e-book terminal. By the picking operation, the user can turn the page more naturally as if turning a real book. As shown in Figure 10A, the user can lift up the object 100c which is a part of the page by lifting the corner part of the screen. Further, by moving the finger in the picked-up state to the opposite page and releasing the finger or touching the page at that place, the page can be turned.

[0066] Figure 10B shows an example of changing the position before and after an object in editing software such as document creation software or presentation manuscript creation software. Figure 10B is an example of moving a circular object 100d located behind a triangular object and a rectangular object to the frontmost position. In the case of a device that detects only contact, multiple contact operations are required to move an object located behind to the frontmost position. However, by applying the above-described pinching operation, the position before and after can be easily changed. After lifting the circular object 100d, it is possible to change only the position before and after the circular object 100d by lowering it at that position. Also, after lifting the circular object 100d, by moving the position of the finger and then lowering it, not only can the position before and after the circular object 100d be changed, but it can also be moved to an arbitrary position within the screen.

[0067] Figures 11A to 12A show examples of game applications to which the pinching operation is applied.

[0068] Figure 11A is an example of applying the pinching operation to a plant-growing game. The user can perform operations necessary for plant growth, such as pulling out a weed object 100e in the game, giving a water object 100g to the plant, and scattering a seed object 100f, by means of the pinching operation. Figure 11A shows containers corresponding to each of weeds, water, and seeds. Since operations closer to reality can be incorporated into the game, the game can be enjoyed more intuitively.

[0069] Figures 11B and 11C are examples of applying the pinching operation to a game where animals interact. As shown in Figure 11B, the user can wave an object 100i like a stick towards the animal object 100h, or roll an object 100j like a ball towards the animal. Due to the pinching operation, the object can be moved as intended, thus enabling a greater sense of enjoyment. Also, as shown in Figure 11C, it becomes possible to display the action of pinching the animal object 100h and swaying it left and right. The animal object 100h sways in accordance with the finger movement of the user, allowing the user to feel a sense of relaxation.

[0070] Figure 12A is an example of applying the pinching operation to a game of pulling out stacked rods, showing a game that combines scrolling and the pinching operation. By scrolling, an arbitrary stacked surface is selected, and the object 100j of the rod to be pulled out is pinched and selected. Then, by lifting it up, the rod object 100j can be pulled out. In the game, the lifting speed or the overall balance, etc. are processed, and if a certain condition is exceeded, the stacked rods will collapse.

[0071] Figure 12B shows an example of applying the pinching operation to application switching in an electronic device such as a smartphone or a tablet. On the display unit 12, when pinching and lifting at an arbitrary position, a list of applications running in the electronic device is displayed. When the finger is rotated while pinching and lifting, the launched applications are selected one by one in order. The solid line indicates the object 100k of the selected application. In this state, by pinching down, the screen of the selected application can be opened.

[0072] In addition, by remotely connecting an electronic device and applying a pinching operation, it can be used for remote treatment in a medical field. Since the Device 10 and the Device 20 have a function of detecting contact with a screen, for example, the treatment site can be selected by contacting the screen on which the affected part is displayed. Further, by combining the pinching operation, operations such as pinching, lifting, and cutting the treatment site can be remotely performed. When performing remote treatment, the actual treatment can be performed by a robotic arm or the like.

[0073] Note that the example of the application shown here can be described as a program, for example. For example, a program describing a processing method, a detection method, an operation method, an operation method, or a display method executed by the Device 10 or the like exemplified above can be stored in a non-transitory storage medium and read and executed by an arithmetic unit or the like included in the control unit 11 of the Device 10. That is, a program for causing the above-described processing method, detection method, operation method, operation method, or display method to be executed by hardware, and a non-transitory storage medium storing the program are one aspect of the present invention.

[0074] This embodiment can be appropriately combined with other embodiments. Also, in this specification, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be appropriately combined.

[0075] (Embodiment 2) In this embodiment, a light-emitting and light-receiving device according to one aspect of the present invention will be described. The display device exemplified below can be suitably used for the light-emitting and light-receiving unit of the electronic device described in Embodiment 1.

[0076] The light-receiving and emitting section of the light-receiving and emitting device according to one aspect of the present invention has a light-receiving element (also referred to as a light-receiving device) and a light-emitting element (also referred to as a light-emitting device). The light-receiving and emitting section has a function of displaying an image using the light-emitting element. Further, the light-receiving and emitting section has one or both of a function of imaging and a function of sensing using the light-receiving element. Therefore, the light-receiving and emitting device according to one aspect of the present invention can also be expressed as a display device, and the light-receiving and emitting section can also be expressed as a display section.

[0077] Alternatively, the light-receiving and emitting device according to one aspect of the present invention may be configured to have a light-receiving and emitting element (also referred to as a light-receiving and emitting device) and a light-emitting element.

[0078] First, a light-receiving and emitting device having a light-receiving element and a light-emitting element will be described.

[0079] The light-receiving and emitting device according to one aspect of the present invention has a light-receiving element and a light-emitting element in the light-receiving and emitting section. In the light-receiving and emitting device according to one aspect of the present invention, the light-emitting elements are arranged in a matrix in the light-receiving and emitting section, and an image can be displayed by the light-receiving and emitting section. Further, light-receiving elements are arranged in a matrix in the light-receiving and emitting section, and the light-receiving and emitting section also has one or both of an imaging function and a sensing function. The light-receiving and emitting section can be used for an image sensor, a touch sensor, etc. That is, an image can be captured by detecting light with the light-receiving and emitting section. Also, a touch operation of an object (finger, pen, etc.) can be detected. Further, in the light-receiving and emitting device according to one aspect of the present invention, the light-emitting element can be used as a light source of the sensor. Therefore, it is not necessary to provide a light-receiving section and a light source separately from the light-receiving and emitting device, and the number of parts of the electronic device can be reduced.

[0080] In the light-receiving and emitting device according to one aspect of the present invention, when the light emitted by the light-emitting element included in the light-receiving and emitting section is reflected (or scattered) by an object, the light-receiving element can detect the reflected light (or scattered light). Therefore, imaging and detection of touch operations are possible even in a dark place.

[0081] The light-emitting element included in the light-receiving and emitting device according to one aspect of the present invention functions as a display element (also referred to as a display device).

[0082] As the light-emitting element, it is preferable to use an EL element (also referred to as an EL device) such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode). Examples of the light-emitting substance included in the EL element include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), an inorganic compound (such as a quantum dot material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) material). Further, as the light-emitting element, an LED such as a micro LED (Light Emitting Diode) can also be used.

[0083] The light-receiving and emitting device according to one aspect of the present invention has a function of detecting light using a light-receiving element.

[0084] When the light-receiving element is used as an image sensor, the light-receiving and emitting device can capture an image using the light-receiving element. For example, the light-receiving and emitting device can be used as a scanner.

[0085] An electronic device to which the light-receiving and emitting device according to one aspect of the present invention is applied can acquire data related to biometric information such as fingerprints and palm prints using the function as an image sensor. That is, a biometric authentication sensor can be incorporated in the light-receiving and emitting device. By incorporating the biometric authentication sensor in the light-receiving and emitting device, the number of components of the electronic device can be reduced compared to the case where a biometric authentication sensor is provided separately from the light-receiving and emitting device, and the electronic device can be miniaturized and lightened.

[0086] Further, when the light-receiving element is used as a touch sensor, the light-receiving and emitting device can detect a touch operation of an object using the light-receiving element.

[0087] As the light receiving element, for example, a pn-type or pin-type photodiode can be used. The light receiving element functions as a photoelectric conversion element (also referred to as a photoelectric conversion device) that detects light incident on the light receiving element and generates electric charges. The amount of electric charges generated from the light receiving element is determined based on the amount of light incident on the light receiving element.

[0088] In particular, as the light receiving element, it is preferable to use an organic photodiode having a layer containing an organic compound. The organic photodiode is easy to be thinned, lightened, and enlarged in area, and also has a high degree of freedom in shape and design, so it can be applied to various devices.

[0089] In the light emitting and receiving device according to one aspect of the present invention, an organic EL element (also referred to as an organic EL device) is used as the light emitting element, and an organic photodiode is used as the light receiving element. The organic EL element and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL element.

[0090] When all the layers constituting the organic EL element and the organic photodiode are separately formed, the number of film forming steps becomes extremely large. However, since the organic photodiode has many layers that can have a common configuration with the organic EL element, the layers that can have a common configuration can be formed in a batch, thereby suppressing an increase in the film forming steps.

[0091] For example, one of a pair of electrodes (common electrode) can be a common layer for the light-receiving element and the light-emitting element. Further, for example, it is preferable that at least one of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer is a common layer for the light-receiving element and the light-emitting element. Further, for example, the light-receiving element and the light-emitting element can have the same configuration except that the light-receiving element has an active layer and the light-emitting element has a light-emitting layer. That is, the light-receiving element can be manufactured only by replacing the light-emitting layer of the light-emitting element with the active layer. Thus, since the light-receiving element and the light-emitting element have a common layer, the number of film-forming times and the number of masks can be reduced, and the manufacturing process and manufacturing cost of the light-receiving and light-emitting device can be reduced. Further, a light-receiving and light-emitting device having a light-receiving element can be manufactured using an existing manufacturing apparatus and manufacturing method of a display device.

[0092] Note that the layer common to the light-receiving element and the light-emitting element may have different functions in the light-emitting element and the light-receiving element. In this specification, components are named based on their functions in the light-emitting element. For example, the hole injection layer functions as a hole injection layer in the light-emitting element and functions as a hole transport layer in the light-receiving element. Similarly, the electron injection layer functions as an electron injection layer in the light-emitting element and functions as an electron transport layer in the light-receiving element. Further, the layer common to the light-receiving element and the light-emitting element may have the same functions in the light-emitting element and the light-receiving element. The hole transport layer functions as a hole transport layer in both the light-emitting element and the light-receiving element, and the electron transport layer functions as an electron transport layer in both the light-emitting element and the light-receiving element.

[0093] Next, a light-receiving and light-emitting device having a light-receiving and light-emitting element and a light-emitting element will be described. Note that descriptions of the same functions, actions, effects, etc. as those described above may be omitted.

[0094] In the light-emitting and light-receiving device according to one aspect of the present invention, a sub-pixel exhibiting any color has a light-emitting and light-receiving element instead of a light-emitting element, and sub-pixels exhibiting other colors have light-emitting elements. The light-emitting and light-receiving element has both a function of emitting light (light-emitting function) and a function of receiving light (light-receiving function). For example, when a pixel has three sub-pixels, a red sub-pixel, a green sub-pixel, and a blue sub-pixel, at least one sub-pixel has a light-emitting and light-receiving element, and the other sub-pixels have light-emitting elements. Therefore, the light-emitting and light-receiving unit of the light-emitting and light-receiving device according to one aspect of the present invention has a function of displaying an image using both the light-emitting and light-receiving element and the light-emitting element.

[0095] By the light-emitting and light-receiving element serving as both a light-emitting element and a light-receiving element, a light-receiving function can be imparted to a pixel without increasing the number of sub-pixels included in the pixel. Thereby, one or both of an imaging function and a sensing function can be added to the light-emitting and light-receiving unit of the light-emitting and light-receiving device while maintaining the aperture ratio of the pixel (the aperture ratio of each sub-pixel) and the definition of the light-emitting and light-receiving device. Therefore, the light-emitting and light-receiving device according to one aspect of the present invention can increase the aperture ratio of the pixel and is easily made high-definition as compared with the case where a sub-pixel having a light-receiving element is provided separately from the sub-pixel having a light-emitting element.

[0096] In the light-emitting and light-receiving device according to one aspect of the present invention, the light-emitting and light-receiving elements and the light-emitting elements are arranged in a matrix in the light-emitting and light-receiving unit, and an image can be displayed by the light-emitting and light-receiving unit. Further, the light-emitting and light-receiving unit can be used for an image sensor and a touch sensor. The light-emitting and light-receiving device according to one aspect of the present invention can use the light-emitting element as a light source of the sensor. Therefore, imaging and detection of touch operations are possible even in a dark place.

[0097] The light-emitting and light-receiving element can be manufactured by combining an organic EL element and an organic photodiode. For example, the light-emitting and light-receiving element can be manufactured by adding an active layer of an organic photodiode to the stacked structure of the organic EL element. Further, for the light-emitting and light-receiving element manufactured by combining an organic EL element and an organic photodiode, the number of film-forming steps can be suppressed by forming a layer that can be a common configuration with the organic EL element in one film-forming step.

[0098] For example, one of a pair of electrodes (common electrode) can be a common layer for both the light-emitting and light-receiving elements. Further, for example, it is preferable that at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer be a common layer for both the light-emitting and light-receiving elements. Also, for example, except for the presence or absence of the active layer of the light-receiving element, the light-emitting and light-receiving elements can have the same configuration. That is, a light-emitting and light-receiving element can be manufactured by simply adding the active layer of the light-receiving element to the light-emitting element. Thus, by having a common layer for the light-emitting and light-receiving elements, the number of film-forming times and the number of masks can be reduced, and the manufacturing process and manufacturing cost of the light-emitting and light-receiving device can be reduced. Also, a light-emitting and light-receiving device having a light-emitting and light-receiving element can be manufactured using existing manufacturing equipment and manufacturing methods for display devices.

[0099] Note that the layers of the light-emitting and light-receiving element may have different functions depending on whether the light-emitting and light-receiving element functions as a light-receiving element or as a light-emitting element. In this specification, components are named based on the functions when the light-emitting and light-receiving element functions as a light-emitting element.

[0100] The light-emitting and light-receiving device of the present embodiment has a function of displaying an image using a light-emitting element and a light-emitting and light-receiving element. That is, the light-emitting element and the light-emitting and light-receiving element function as display elements.

[0101] The light-emitting and light-receiving device of the present embodiment has a function of detecting light using a light-emitting and light-receiving element. The light-emitting and light-receiving element can detect light having a shorter wavelength than the light emitted by the light-emitting and light-receiving element itself.

[0102] When the light-emitting and light-receiving element is used as an image sensor, the light-emitting and light-receiving device of the present embodiment can capture an image using the light-emitting and light-receiving element. Also, when the light-emitting and light-receiving element is used as a touch sensor, the light-emitting and light-receiving device of the present embodiment can detect a touch operation of an object using the light-emitting and light-receiving element.

[0103] The light-emitting and light-receiving element functions as a photoelectric conversion element. The light-emitting and light-receiving element can be fabricated by adding the active layer of a light-receiving element to the structure of the above-described light-emitting element. For the light-emitting and light-receiving element, for example, the active layer of a pn-type or pin-type photodiode can be used.

[0104] In particular, for the light-emitting and light-receiving element, it is preferable to use the active layer of an organic photodiode having a layer containing an organic compound. Since an organic photodiode can be easily thinned, lightened, and made large in area, and also has a high degree of freedom in shape and design, it can be applied to various devices.

[0105] Hereinafter, a display device, which is an example of the light-emitting and light-receiving device according to one aspect of the present invention, will be described more specifically with reference to the drawings.

[0106] [Configuration Example 1 of Display Device] [Configuration Example 1-1] FIG. 13A shows a schematic diagram of a display panel 200. The display panel 200 includes a substrate 201, a substrate 202, a light-receiving element 212, a light-emitting element 211R, a light-emitting element 211G, a light-emitting element 211B, a functional layer 203, and the like.

[0107] The light-emitting elements 211R, 211G, 211B, and the light-receiving element 212 are provided between the substrate 201 and the substrate 202. The light-emitting elements 211R, 211G, 211B emit red (R), green (G), or blue (B) light, respectively. Hereinafter, when the light-emitting elements 211R, 211G, and 211B are not distinguished, they may be referred to as the light-emitting element 211.

[0108] The display panel 200 has a plurality of pixels arranged in a matrix. One pixel has one or more sub-pixels. One sub-pixel has one light-emitting element. For example, the pixel may have a configuration with three sub-pixels (such as three colors of R, G, B, or three colors of yellow (Y), cyan (C), and magenta (M)), or a configuration with four sub-pixels (such as four colors of R, G, B, white (W), or four colors of R, G, B, Y). Further, the pixel has a light-receiving element 212. The light-receiving element 212 may be provided in all pixels or may be provided in some pixels. Also, one pixel may have a plurality of light-receiving elements 212.

[0109] FIG. 8A shows a state where the finger 220 touches the surface of the substrate 202. A part of the light emitted by the light-emitting element 211G is reflected at the contact portion between the substrate 202 and the finger 220. Then, a part of the reflected light is incident on the light-receiving element 212, and it is possible to detect that the finger 220 has touched the substrate 202. That is, the display panel 200 can function as a touch panel.

[0110] The functional layer 203 has a circuit for driving the light-emitting elements 211R, 211G, and 211B, and a circuit for driving the light-receiving element 212. The functional layer 203 is provided with switches, transistors, capacitors, wirings, etc. Note that when driving the light-emitting elements 211R, 211G, 211B, and the light-receiving element 212 in a passive matrix method, a configuration without providing switches and transistors may also be used.

[0111] The display panel 200 preferably has a function of detecting the fingerprint of the finger 220. FIG. 13B schematically shows an enlarged view of the contact portion in a state where the finger 220 touches the substrate 202. Also, FIG. 13B shows the light-emitting elements 211 and the light-receiving elements 212 arranged alternately.

[0112] The finger 220 has fingerprints formed by concave and convex portions. Therefore, as shown in FIG. 13B, the convex portions of the fingerprint are in contact with the substrate 202.

[0113] The light reflected from a certain surface or interface includes specular reflection and diffuse reflection. Specularly reflected light is highly directional light with the incident angle equal to the reflection angle, while diffusely reflected light is low-directional light with low angular dependence of intensity. The light reflected from the surface of finger 220 has a dominant diffuse reflection component among specular reflection and diffuse reflection. On the other hand, the light reflected from the interface between substrate 202 and the atmosphere has a dominant specular reflection component.

[0114] The intensity of the light reflected at the contact or non-contact surface between finger 220 and substrate 202 and incident on the light receiving element 212 located directly below these is the sum of specularly reflected light and diffusely reflected light. As described above, since the substrate 202 and finger 220 do not contact in the recess of finger 220, specularly reflected light (indicated by the solid line arrow) becomes dominant, and since they contact in the convex part, diffusely reflected light from finger 220 (indicated by the dashed line arrow) becomes dominant. Therefore, the intensity of the light received by the light receiving element 212 located directly below the recess is higher than that of the light receiving element 212 located directly below the convex part. Thereby, the fingerprint of finger 220 can be imaged.

[0115] By setting the arrangement interval of the light receiving elements 212 to be smaller than the distance between two convex parts of the fingerprint, preferably the distance between an adjacent recess and convex part, a clear fingerprint image can be obtained. Since the interval between the recess and convex part of a human fingerprint is approximately 200 μm, for example, the arrangement interval of the light receiving elements 212 is 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less, still more preferably 100 μm or less, and still more preferably 50 μm or less, and is 1 μm or more, preferably 10 μm or more, more preferably 20 μm or more.

[0116] An example of the fingerprint image captured by the display panel 200 is shown in FIG. 13C. In FIG. 13C, within the imaging range 223, the contour of finger 220 is indicated by a dashed line, and the contour of the contact part 221 is indicated by a one-dot chain line. Within the contact part 221, a fingerprint 222 with high contrast can be imaged due to the difference in the amount of light incident on the light receiving element 212.

[0117] The display panel 200 can also function as a touch panel or a tablet. Fig. 13D shows a state where the tip of the stylus 225 is in contact with the substrate 202 and is being slid in the direction of the dashed arrow.

[0118] As shown in Fig. 13D, the diffused reflected light diffused at the contact surface between the tip of the stylus 225 and the substrate 202 is incident on the light receiving element 212 located at the portion overlapping the contact surface, thereby enabling the position of the tip of the stylus 225 to be detected with high precision.

[0119] Fig. 13E shows an example of the trajectory 226 of the stylus 225 detected by the display panel 200. Since the display panel 200 can detect the position of a detected object such as the stylus 225 with high positional accuracy, it is also possible to perform high-definition drawing in a drawing application or the like. Also, unlike the case of using a capacitive touch sensor or an electromagnetic induction type touch pen, since it is possible to detect the position even for a highly insulating detected object, the material of the tip portion of the stylus 225 does not matter, and various writing utensils (for example, a pen, a glass pen, a quill pen, etc.) can also be used.

[0120] Here, Figs. 13F to 13H show an example of a pixel applicable to the display panel 200.

[0121] The pixels shown in Figs. 13F and 13G each have a red (R) light emitting element 211R, a green (G) light emitting element 211G, a blue (B) light emitting element 211B, and a light receiving element 212. Each pixel has a pixel circuit for driving the light emitting element 211R, the light emitting element 211G, the light emitting element 211B, and the light receiving element 212, respectively.

[0122] Fig. 13F is an example in which three light emitting elements and one light receiving element are arranged in a 2×2 matrix. Fig. 13G is an example in which three light emitting elements are arranged in a row, and a horizontally long one light receiving element 212 is arranged below them.

[0123] The pixel shown in Fig. 13H is an example having a white (W) light-emitting element 211W. Here, four light-emitting elements are arranged in a row, and a light-receiving element 212 is arranged below them.

[0124] Note that the configuration of the pixel is not limited to the above, and various arrangement methods can be adopted.

[0125] 〔Configuration Example 1-2〕 Hereinafter, an example of a configuration including a light-emitting element that emits visible light, a light-emitting element that emits infrared light, and a light-receiving element will be described.

[0126] In addition to the configuration illustrated in Fig. 14A, the display panel 200A shown in Fig. 14A has a light-emitting element 211IR. The light-emitting element 211IR is a light-emitting element that emits infrared light IR. At this time, it is preferable to use, as the light-receiving element 212, an element that can receive at least the infrared light IR emitted by the light-emitting element 211IR. More preferably, as the light-receiving element 212, an element that can receive both visible light and infrared light is used.

[0127] As shown in Fig. 14A, when a finger 220 touches the substrate 202, the infrared light IR emitted from the light-emitting element 211IR is reflected by the finger 220, and a part of the reflected light is incident on the light-receiving element 212, whereby the position information of the finger 220 can be obtained.

[0128] Figs. 14B to 14D show an example of a pixel applicable to the display panel 200A.

[0129] Fig. 14B is an example in which three light-emitting elements are arranged in a row, and below them, the light-emitting element 211IR and the light-receiving element 212 are arranged side by side horizontally. Fig. 14C is an example in which four light-emitting elements including the light-emitting element 211IR are arranged in a row, and below them, the light-receiving element 212 is arranged.

[0130] Fig. 14D is an example in which three light-emitting elements and a light-receiving element 212 are arranged in four directions with the light-emitting element 211IR at the center.

[0131] In the pixels shown in FIGS. 14B to 14D, the light-emitting elements with each other, and the light-emitting element and the light-receiving element, can exchange their respective positions.

[0132] 〔Configuration Example 1-3〕 Hereinafter, an example of a configuration including a light-emitting element that emits visible light and a light-emitting and light-receiving element that emits and receives visible light will be described.

[0133] The display panel 200B shown in FIG. 15A includes a light-emitting element 211B, a light-emitting element 211G, and a light-emitting and light-receiving element 213R. The light-emitting and light-receiving element 213R has a function as a light-emitting element that emits red (R) light and a function as a photoelectric conversion element that receives visible light. FIG. 15A shows an example in which the light-emitting and light-receiving element 213R receives the green (G) light emitted by the light-emitting element 211G. Note that the light-emitting and light-receiving element 213R may receive the blue (B) light emitted by the light-emitting element 211B. Further, the light-emitting and light-receiving element 213R may receive both green light and blue light.

[0134] For example, the light-emitting and light-receiving element 213R preferably receives light having a shorter wavelength than the light it emits. Alternatively, the light-emitting and light-receiving element 213R may be configured to receive light having a longer wavelength (e.g., infrared light) than the light it emits. The light-emitting and light-receiving element 213R may be configured to receive light having a wavelength comparable to the light it emits, but in that case, it may also receive the light it emits, and there is a risk that the light emission efficiency will decrease. Therefore, the light-emitting and light-receiving element 213R is preferably configured so that the peak of the emission spectrum and the peak of the absorption spectrum do not overlap as much as possible.

[0135] Also, the light emitted by the light-emitting and light-receiving element here is not limited to red light. Further, the light emitted by the light-emitting element is not limited to a combination of green light and blue light. For example, as the light-emitting and light-receiving element, an element that emits green or blue light and receives light having a wavelength different from the light it emits can be used.

[0136] In this way, by making the light-emitting and light-receiving element 213R serve as both a light-emitting element and a light-receiving element, the number of elements arranged in one pixel can be reduced. Therefore, it becomes easier to achieve high definition, a high aperture ratio, high resolution, etc.

[0137] Figs. 15B to 15I show an example of a pixel applicable to the display panel 200B.

[0138] Fig. 15B shows an example in which the light-emitting and light-receiving element 213R, the light-emitting element 211G, and the light-emitting element 211B are arranged in a row. Fig. 15C shows an example in which the light-emitting element 211G and the light-emitting element 211B are alternately arranged in the vertical direction, and the light-emitting and light-receiving element 213R is arranged beside them.

[0139] Fig. 15D shows an example in which three light-emitting elements (the light-emitting element 211G, the light-emitting element 211B, and the light-emitting element 211X) and one light-emitting and light-receiving element are arranged in a 2×2 matrix. The light-emitting element 211X is an element that emits light other than R, G, and B. Examples of light other than R, G, and B include light such as white (W), yellow (Y), cyan (C), magenta (M), infrared light (IR), and ultraviolet light (UV). When the light-emitting element 211X emits infrared light, it is preferable that the light-emitting and light-receiving element has a function of detecting infrared light or a function of detecting both visible light and infrared light. Depending on the use of the sensor, the wavelength of the light detected by the light-emitting and light-receiving element can be determined.

[0140] FIG. 15E shows two pixels. The area including three elements surrounded by a dotted line corresponds to one pixel. Each pixel has a light-emitting element 211G, a light-emitting element 211B, and a light-receiving and light-emitting element 213R. In the left pixel shown in FIG. 15E, the light-emitting element 211G is arranged in the same row as the light-receiving and light-emitting element 213R, and the light-emitting element 211B is arranged in the same column as the light-receiving and light-emitting element 213R. In the right pixel shown in FIG. 15E, the light-emitting element 211G is arranged in the same row as the light-receiving and light-emitting element 213R, and the light-emitting element 211B is arranged in the same column as the light-emitting element 211G. In the pixel layout shown in FIG. 15E, in both odd rows and even rows, the light-receiving and light-emitting element 213R, the light-emitting element 211G, and the light-emitting element 211B are repeatedly arranged, and in each column, light-emitting elements or light-receiving and light-emitting elements of different colors are arranged in odd rows and even rows.

[0141] FIG. 15F shows four pixels to which a pentile array is applied, and two adjacent pixels have light-emitting elements or light-receiving and light-emitting elements that exhibit two different colors of light in combination. Note that FIG. 15F shows the upper surface shape of the light-emitting element or the light-receiving and light-emitting element.

[0142] The upper left pixel and the lower right pixel shown in FIG. 15F have a light-receiving and light-emitting element 213R and a light-emitting element 211G. The upper right pixel and the lower left pixel have a light-emitting element 211G and a light-emitting element 211B. That is, in the example shown in FIG. 15F, a light-emitting element 211G is provided in each pixel.

[0143] The upper surface shape of the light-emitting element and the light-receiving and light-emitting element is not particularly limited, and can be a circle, an ellipse, a polygon, a rounded polygon, or the like. FIGS. 15F and the like show an example in which the upper surface shape of the light-emitting element and the light-receiving and light-emitting element is a square (rhombus) inclined at approximately 45 degrees. Note that the upper surface shapes of the light-emitting elements and the light-receiving and light-emitting elements of each color may be different from each other, or may be the same in some or all colors.

[0144] Also, the sizes of the light-emitting regions (or light-receiving and emitting regions) of the light-emitting elements and light-receiving and emitting elements of each color may be different from each other, or may be the same for some or all colors. For example, in FIG. 15F, the area of the light-emitting region of the light-emitting element 211G provided in each pixel may be made smaller than the light-emitting regions (or light-receiving and emitting regions) of other elements.

[0145] FIG. 15G is a modified example of the pixel arrangement shown in FIG. 15F. Specifically, the configuration of FIG. 15G is obtained by rotating the configuration of FIG. 15F by 45 degrees. In FIG. 15F, the description was made assuming that one pixel has two elements, but as shown in FIG. 15G, it can also be considered that one pixel is constituted by four elements.

[0146] FIG. 15H is a modified example of the pixel arrangement shown in FIG. 15F. The upper left pixel and the lower right pixel shown in FIG. 15H have the light-receiving and emitting element 213R and the light-emitting element 211G. Also, the upper right pixel and the lower left pixel have the light-receiving and emitting element 213R and the light-emitting element 211B. That is, in the example shown in FIG. 15H, the light-receiving and emitting element 213R is provided in each pixel. Since the light-receiving and emitting element 213R is provided in each pixel, the configuration shown in FIG. 15H can perform imaging with higher resolution than the configuration shown in FIG. 15F. Thereby, for example, the accuracy of biometric authentication can be improved.

[0147] FIG. 15I is a modified example of the pixel arrangement shown in FIG. 15H, and is a configuration obtained by rotating the pixel arrangement by 45 degrees.

[0148] In FIG. 15I, the description will be made assuming that one pixel is constituted by four elements (two light-emitting elements and two light-receiving and emitting elements). In this way, by having a plurality of light-receiving and emitting elements having a light-receiving function in one pixel, imaging with high resolution can be performed. Therefore, the accuracy of biometric authentication can be improved. For example, the imaging resolution can be made √2 times the display resolution.

[0149] The display device to which the configuration shown in FIG. 15H or FIG. 15I is applied includes p first light-emitting elements (p is an integer of 2 or more), q second light-emitting elements (q is an integer of 2 or more), and r light-receiving and light-emitting elements (r is an integer greater than p and greater than q). p and r satisfy r = 2p. Also, p, q, and r satisfy r = p + q. One of the first light-emitting element and the second light-emitting element emits green light, and the other emits blue light. The light-receiving and light-emitting element emits red light and has a light-receiving function.

[0150] For example, when detecting a touch operation using a light-receiving and light-emitting element, it is preferable that the light emission from the light source is difficult for the user to visually recognize. Since blue light has lower visibility than green light, it is preferable to use a light-emitting element that emits blue light as the light source. Therefore, it is preferable that the light-receiving and light-emitting element has a function of receiving blue light. Note that the present invention is not limited to this, and the light-emitting element used as the light source can be appropriately selected according to the sensitivity of the light-receiving and light-emitting element.

[0151] As described above, various arrays of pixels can be applied to the display device of the present embodiment.

[0152] [Device Structure] Next, the detailed configurations of the light-emitting element, the light-receiving element, and the light-receiving and light-emitting element that can be used in the display device according to one aspect of the present invention will be described.

[0153] The display device according to one aspect of the present invention may be any of a top emission type that emits light in a direction opposite to the substrate on which the light-emitting element is formed, a bottom emission type that emits light toward the substrate side on which the light-emitting element is formed, and a dual emission type that emits light from both sides.

[0154] In the present embodiment, a top emission type display device will be described as an example.

[0155] In this specification and the like, unless otherwise specified, even when describing a configuration having a plurality of elements (such as a light-emitting element and a light-emitting layer), when describing matters common to each element, the alphabet is omitted. For example, when describing matters common to the light-emitting layer 283R and the light-emitting layer 283G, etc., it may be described as the light-emitting layer 283.

[0156] The display device 280A shown in FIG. 16A includes a light-receiving element 270PD, a light-emitting element 270R that emits red (R) light, a light-emitting element 270G that emits green (G) light, and a light-emitting element 270B that emits blue (B) light.

[0157] Each light-emitting element has a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, a light-emitting layer, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 laminated in this order. The light-emitting element 270R has a light-emitting layer 283R, the light-emitting element 270G has a light-emitting layer 283G, and the light-emitting element 270B has a light-emitting layer 283B. The light-emitting layer 283R has a light-emitting substance that emits red light, the light-emitting layer 283G has a light-emitting substance that emits green light, and the light-emitting layer 283B has a light-emitting substance that emits blue light.

[0158] The light-emitting element is an electroluminescent element that emits light toward the common electrode 275 side by applying a voltage between the pixel electrode 271 and the common electrode 275.

[0159] The light-receiving element 270PD has a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, an active layer 273, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 laminated in this order.

[0160] The light-receiving element 270PD is a photoelectric conversion element that receives light incident from outside the display device 280A and converts it into an electrical signal.

[0161] In this embodiment, it will be described that in both the light-emitting element and the light-receiving element, the pixel electrode 271 functions as an anode and the common electrode 275 functions as a cathode. That is, the light-receiving element can detect the light incident on the light-receiving element, generate charges, and extract them as current by applying a reverse bias between the pixel electrode 271 and the common electrode 275 and driving it.

[0162] In the display device of this embodiment, an organic compound is used for the active layer 273 of the light-receiving element 270PD. The light-receiving element 270PD can have the same configuration as the light-emitting element for the layers other than the active layer 273. Therefore, by simply adding a step of forming the active layer 273 to the manufacturing process of the light-emitting element, the light-receiving element 270PD can be formed in parallel with the formation of the light-emitting element. Further, the light-emitting element and the light-receiving element 270PD can be formed on the same substrate. Therefore, the light-receiving element 270PD can be incorporated into the display device without significantly increasing the manufacturing process.

[0163] In the display device 280A, an example is shown in which the light-receiving element 270PD and the light-emitting element have a common configuration except that the active layer 273 of the light-receiving element 270PD and the light-emitting layer 283 of the light-emitting element are made different. However, the configurations of the light-receiving element 270PD and the light-emitting element are not limited to this. The light-receiving element 270PD and the light-emitting element may have layers that are made different from each other in addition to the active layer 273 and the light-emitting layer 283. The light-receiving element 270PD and the light-emitting element preferably have one or more layers (common layers) that are commonly used. Thereby, the light-receiving element 270PD can be incorporated into the display device without significantly increasing the manufacturing process.

[0164] For the electrode on the side where light is extracted among the pixel electrode 271 and the common electrode 275, a conductive film that transmits visible light is used. Further, for the electrode on the side where light is not extracted, it is preferable to use a conductive film that reflects visible light.

[0165] It is preferable that a microcavity structure is applied to the light-emitting element included in the display device of the present embodiment. Therefore, it is preferable that one of the pair of electrodes included in the light-emitting element has an electrode (semi-transmissive / semi-reflective electrode) having transmissivity and reflectivity with respect to visible light, and the other has an electrode (reflective electrode) having reflectivity with respect to visible light. By having a microcavity structure in the light-emitting element, the light emission obtained from the light-emitting layer can be resonated between both electrodes, and the light emitted from the light-emitting element can be enhanced.

[0166] Note that the semi-transmissive / semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode having transmissivity with respect to visible light (also referred to as a transparent electrode).

[0167] The light transmittance of the transparent electrode is set to 40% or more. For example, it is preferable to use an electrode having a transmittance of 40% or more for visible light (light having a wavelength of 400 nm or more and less than 750 nm) in the light-emitting element. The reflectivity of visible light of the semi-transmissive / semi-reflective electrode is set to 10% or more and 95% or less, preferably 30% or more and 80% or less. The reflectivity of visible light of the reflective electrode is set to 40% or more and 100% or less, preferably 70% or more and 100% or less. Further, the resistivity of these electrodes is preferably 1×10 -2 Ωcm or less. When the light-emitting element emits near-infrared light (light having a wavelength of 750 nm or more and 1300 nm or less), it is preferable that the transmittance or reflectivity of near-infrared light of these electrodes satisfies the above numerical range in the same manner as the transmittance or reflectivity of visible light.

[0168] The light-emitting element has at least a light-emitting layer 283. The light-emitting element may further have, as layers other than the light-emitting layer 283, a layer containing a substance with high hole injection property, a substance with high hole transport property, a hole blocking material, a substance with high electron transport property, a substance with high electron injection property, an electron blocking material, or a bipolar substance (a substance with high electron transport property and high hole transport property).

[0169] For example, the light-emitting element and the light-receiving element can have one or more common layers among the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer. Further, the light-emitting element and the light-receiving element can have one or more layers among the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer made separately from each other.

[0170] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection properties. As a material with high hole injection properties, an aromatic amine compound or a composite material containing a hole transport material and an acceptor material (electron-accepting material) can be used.

[0171] In the light-emitting element, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In the light-receiving element, the hole transport layer is a layer that transports holes generated based on the light incident on the active layer to the anode. The hole transport layer is a layer containing a hole transport material. As the hole transport material, a substance having a hole mobility of 1×10 -6 cm 2 / Vs or more is preferable. In addition, as long as the substance has higher hole transportability than electrons, other substances can also be used. As the hole transport material, a π-electron-excessive heteroaromatic compound (for example, a carbazole derivative, a thiophene derivative, a furan derivative, etc.), an aromatic amine (a compound having an aromatic amine skeleton), and other materials with high hole transportability are preferable.

[0172] In the light-emitting element, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. In the light-receiving element, the electron transport layer is a layer that transports electrons generated based on the light incident on the active layer to the cathode. The electron transport layer is a layer containing an electron transport material. As the electron transport material, a substance having an electron mobility of 1×10 -6 cm 2A substance having an electron mobility of / Vs or higher is preferred. In addition, any other substances can be used as long as they have higher electron transportability than holes. As the electron transport material, in addition to metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, etc., oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other materials with high electron transportability including π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds can be used.

[0173] The electron injection layer is a layer that injects electrons from the cathode into the electron transport layer and is a layer containing a material with high electron injection property. As the material with high electron injection property, alkali metals, alkaline earth metals, or their compounds can be used. As the material with high electron injection property, a composite material containing an electron transport material and a donor material (electron-donating material) can also be used.

[0174] The light-emitting layer 283 is a layer containing a light-emitting substance. The light-emitting layer 283 can have one or more kinds of light-emitting substances. As the light-emitting substance, substances exhibiting light-emitting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red can be appropriately used. In addition, a substance that emits near-infrared light can also be used as the light-emitting substance.

[0175] Examples of the light-emitting substance include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0176] Examples of the fluorescent material include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, etc.

[0177] Examples of the phosphorescent material include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, a 1H-triazole skeleton, an imidazole skeleton, a pyrimidine skeleton, a pyrazine skeleton, or a pyridine skeleton, organometallic complexes (especially iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand, platinum complexes, rare earth metal complexes, and the like.

[0178] In addition to the luminescent substance (guest material), the light-emitting layer 283 may contain one or more organic compounds (host materials, assist materials, etc.). As the one or more organic compounds, one or both of a hole-transporting material and an electron-transporting material can be used. Further, a bipolar material or a TADF material may be used as the one or more organic compounds.

[0179] The light-emitting layer 283 preferably has, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material that are a combination likely to form an exciplex. By adopting such a configuration, light emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the exciplex to the luminescent substance (phosphorescent material), can be efficiently obtained. By selecting a combination that forms an exciplex that exhibits light emission overlapping the wavelength of the absorption band on the lowest energy side of the luminescent substance, energy transfer becomes smooth and efficient light emission can be obtained. With this configuration, high efficiency, low-voltage driving, and long life of the light-emitting element can be realized simultaneously.

[0180] As the combination of materials that form an exciplex, it is preferable that the HOMO level (highest occupied orbital level) of the hole-transporting material is a value equal to or higher than the HOMO level of the electron-transporting material. It is preferable that the LUMO level (lowest unoccupied orbital level) of the hole-transporting material is a value equal to or higher than the LUMO level of the electron-transporting material. The LUMO level and HOMO level of the material can be derived from the electrochemical characteristics (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV) measurement.

[0181] The formation of an exciplex can be confirmed, for example, by comparing the emission spectra of a hole transporting material, the emission spectra of an electron transporting material, and the emission spectra of a mixed film obtained by mixing these materials, and observing the phenomenon that the emission spectrum of the mixed film is shifted to a longer wavelength (or has a new peak on the longer wavelength side) than the emission spectra of the respective materials. Alternatively, the transient photoluminescence (PL) of a hole transporting material, the transient PL of an electron transporting material, and the transient PL of a mixed film obtained by mixing these materials are compared, and the formation of the exciplex can be confirmed by observing differences in transient responses such as the transient PL lifetime of the mixed film having a longer lifetime component than the transient PL lifetimes of the respective materials, or the ratio of the delayed component being increased. Further, the above-described transient PL may be read as transient electroluminescence (EL). That is, the formation of the exciplex can also be confirmed by comparing the transient EL of a hole transporting material, the transient EL of a material having electron transporting properties, and the transient EL of a mixed film thereof, and observing differences in transient responses.

[0182] The active layer 273 contains a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In the present embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer 273 is shown. By using an organic semiconductor, the light emitting layer 283 and the active layer 273 can be formed by the same method (for example, vacuum evaporation method), and it is preferable because the manufacturing apparatus can be shared.

[0183] As materials for the n-type semiconductor included in the active layer 273, electron-accepting organic semiconductor materials such as fullerenes (e.g., C60, C70, etc.) and fullerene derivatives can be mentioned. Fullerenes have a shape like a soccer ball, and this shape is energetically stable. Fullerenes have both deep (low) HOMO levels and LUMO levels. Since fullerenes have deep LUMO levels, they have extremely high electron-accepting (acceptor) properties. Usually, when π-electron conjugation (resonance) spreads in a plane like benzene, the electron-donating (donor) property increases. However, because fullerenes have a spherical shape, despite the large spread of π electrons, they have high electron-accepting properties. High electron-accepting properties are beneficial for a light-receiving element because they cause charge separation to occur efficiently at high speed. Both C60 and C70 have broad absorption bands in the visible light region. In particular, C70 is preferable because it has a larger π-electron conjugation system than C60 and also has a broad absorption band in the long-wavelength region.

[0184] In addition, as materials for the n-type semiconductor, metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, quinone derivatives, etc. can be mentioned.

[0185] As materials for the p-type semiconductor included in the active layer 273, electron-donating organic semiconductor materials such as copper(II) phthalocyanine (Copper(II) phthalocyanine; CuPc), tetraphenyldibenzoperiflanthene (Tetraphenyldibenzoperiflanthene; DBP), zinc phthalocyanine (Zinc Phthalocyanine; ZnPc), tin phthalocyanine (SnPc), quinacridone, etc. can be mentioned.

[0186] Examples of the p-type semiconductor material include carbazole derivatives, thiophene derivatives, furan derivatives, compounds having an aromatic amine skeleton, etc. Further examples of the p-type semiconductor material include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylene vinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc.

[0187] The HOMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material. The LUMO level of the electron-donating organic semiconductor material is preferably shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0188] As the electron-accepting organic semiconductor material, it is preferable to use spherical fullerenes, and as the electron-donating organic semiconductor material, it is preferable to use an organic semiconductor material with a shape close to planar. Molecules with similar shapes tend to aggregate easily. When the same type of molecules aggregate, the energy levels of the molecular orbitals are close, so the carrier transport property can be enhanced.

[0189] For example, the active layer 273 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer 273 may be formed by laminating an n-type semiconductor and a p-type semiconductor.

[0190] Either low molecular weight compounds or high molecular weight compounds can be used for the light-emitting element and the light-receiving element, and they may contain inorganic compounds. The layers constituting the light-emitting element and the light-receiving element can be formed by methods such as vapor deposition (including vacuum vapor deposition), transfer method, printing method, inkjet method, coating method, etc.

[0191] The display device 280B shown in FIG. 16B is different from the display device 280A in that the light receiving element 270PD and the light emitting element 270R have the same configuration.

[0192] The light receiving element 270PD and the light emitting element 270R commonly have the active layer 273 and the light emitting layer 283R.

[0193] Here, it is preferable that the light receiving element 270PD has the same configuration as a light emitting element that emits light with a longer wavelength than the light to be detected. For example, the light receiving element 270PD configured to detect blue light can have the same configuration as one or both of the light emitting element 270R and the light emitting element 270G. For example, the light receiving element 270PD configured to detect green light can have the same configuration as the light emitting element 270R.

[0194] By making the light receiving element 270PD and the light emitting element 270R have the same configuration, the number of film formation steps and the number of masks can be reduced compared to a configuration in which the light receiving element 270PD and the light emitting element 270R have layers that are separately formed from each other. Therefore, the manufacturing process and manufacturing cost of the display device can be reduced.

[0195] Also, by making the light receiving element 270PD and the light emitting element 270R have the same configuration, the margin for misalignment can be narrowed compared to a configuration in which the light receiving element 270PD and the light emitting element 270R have layers that are separately formed from each other. Thereby, the aperture ratio of the pixel can be increased, and the light extraction efficiency of the display device can be increased. Thereby, the lifespan of the light emitting element can be extended. Also, the display device can exhibit high luminance. Also, high definition of the display device is possible.

[0196] The light-emitting layer 283R has a light-emitting material that emits red light. The active layer 273 has an organic compound that absorbs light with a shorter wavelength than red light (for example, one or both of green light and blue light). The active layer 273 preferably has an organic compound that hardly absorbs red light and absorbs light with a shorter wavelength than red light. Thereby, red light is efficiently extracted from the light-emitting element 270R, and the light-receiving element 270PD can detect light with a shorter wavelength than red light with high accuracy.

[0197] In addition, in the display device 280B, an example is shown in which the light-emitting element 270R and the light-receiving element 270PD have the same configuration, but the light-emitting element 270R and the light-receiving element 270PD may each have an optical adjustment layer with a different thickness.

[0198] The display device 280C shown in FIGS. 17A and 17B includes a light-emitting and light-receiving element 270SR that emits red (R) light and has a light-receiving function, a light-emitting element 270G, and a light-emitting element 270B. The configurations of the light-emitting element 270G and the light-emitting element 270B can be applied to the display device 280A and the like described above.

[0199] The light-emitting and light-receiving element 270SR includes a pixel electrode 271, a hole injection layer 281, a hole transport layer 282, an active layer 273, a light-emitting layer 283R, an electron transport layer 284, an electron injection layer 285, and a common electrode 275 stacked in this order. The light-emitting and light-receiving element 270SR has the same configuration as the light-emitting element 270R and the light-receiving element 270PD exemplified in the display device 280B described above.

[0200] In FIG. 17A, a case where the light-emitting and light-receiving element 270SR functions as a light-emitting element is shown. FIG. 17A shows an example in which the light-emitting element 270B emits blue light, the light-emitting element 270G emits green light, and the light-emitting and light-receiving element 270SR emits red light.

[0201] In FIG. 17B, a case where the light-emitting and light-receiving element 270SR functions as a light-receiving element is shown. FIG. 17B shows an example in which the light-emitting and light-receiving element 270SR receives blue light emitted by the light-emitting element 270B and green light emitted by the light-emitting element 270G.

[0202] The light-emitting elements 270B, 270G, and the light-emitting and receiving element 270SR each have a pixel electrode 271 and a common electrode 275. In the present embodiment, a case where the pixel electrode 271 functions as an anode and the common electrode 275 functions as a cathode will be described as an example. The light-emitting and receiving element 270SR can detect light incident on the light-emitting and receiving element 270SR, generate charges, and extract them as a current by driving with a reverse bias applied between the pixel electrode 271 and the common electrode 275.

[0203] The light-emitting and receiving element 270SR can be said to have a configuration in which an active layer 273 is added to the light-emitting element. That is, the light-emitting and receiving element 270SR can be formed in parallel with the formation of the light-emitting element by simply adding a step of forming the active layer 273 to the manufacturing process of the light-emitting element. Further, the light-emitting element and the light-emitting and receiving element can be formed on the same substrate. Therefore, one or both of the imaging function and the sensing function can be imparted to the display unit without significantly increasing the manufacturing process.

[0204] The stacking order of the light-emitting layer 283R and the active layer 273 is not limited. FIGS. 17A and 17B show an example in which the active layer 273 is provided on the hole transport layer 282 and the light-emitting layer 283R is provided on the active layer 273. The stacking order of the light-emitting layer 283R and the active layer 273 may be reversed.

[0205] Further, the light-emitting and receiving element may not have at least one of the hole injection layer 281, the hole transport layer 282, the electron transport layer 284, and the electron injection layer 285. Further, the light-emitting and receiving element may have other functional layers such as a hole blocking layer and an electron blocking layer.

[0206] In the light-emitting and receiving element, a conductive film that transmits visible light is used for the electrode on the side where light is extracted. Further, it is preferable to use a conductive film that reflects visible light for the electrode on the side where light is not extracted.

[0207] Since the functions and materials of the respective layers constituting the light-emitting and receiving element are the same as those of the respective layers constituting the light-emitting element and the light-receiving element, detailed description thereof will be omitted.

[0208] Examples of the stacked structure of the light-emitting and light-receiving element are shown in FIGS. 17C to 17G.

[0209] The light-emitting and light-receiving element shown in FIG. 17C has a first electrode 277, a hole injection layer 281, a hole transport layer 282, a light-emitting layer 283R, an active layer 273, an electron transport layer 284, an electron injection layer 285, and a second electrode 278.

[0210] FIG. 17C shows an example in which a light-emitting layer 283R is provided on a hole transport layer 282, and an active layer 273 is stacked on the light-emitting layer 283R.

[0211] As shown in FIGS. 17A to 17C, the active layer 273 and the light-emitting layer 283R may be in contact with each other.

[0212] Further, it is preferable that a buffer layer is provided between the active layer 273 and the light-emitting layer 283R. At this time, the buffer layer preferably has hole transportability and electron transportability. For example, it is preferable to use a bipolar substance for the buffer layer. Alternatively, at least one layer among a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole blocking layer, and an electron blocking layer can be used as the buffer layer. FIG. 17D shows an example in which a hole transport layer 282 is used as the buffer layer.

[0213] By providing a buffer layer between the active layer 273 and the light-emitting layer 283R, the transfer of excitation energy from the light-emitting layer 283R to the active layer 273 can be suppressed. Further, the optical path length (cavity length) of the microcavity structure can also be adjusted using the buffer layer. Therefore, a high luminous efficiency can be obtained from the light-emitting and light-receiving element having a buffer layer between the active layer 273 and the light-emitting layer 283R.

[0214] FIG. 17E shows an example of a stacked structure in which a hole transport layer 282-1, an active layer 273, a hole transport layer 282-2, and a light-emitting layer 283R are stacked in this order on a hole injection layer 281. The hole transport layer 282-2 functions as a buffer layer. The hole transport layer 282-1 and the hole transport layer 282-2 may contain the same material or different materials. Further, instead of the hole transport layer 282-2, a layer that can be used for the buffer layer described above may be used. Also, the positions of the active layer 273 and the light-emitting layer 283R may be interchanged.

[0215] The light-receiving and light-emitting element shown in FIG. 17F is different from the light-receiving and light-emitting element shown in FIG. 17A in that it does not have a hole transport layer 282. Thus, the light-receiving and light-emitting element may not have at least one of a hole injection layer 281, a hole transport layer 282, an electron transport layer 284, and an electron injection layer 285. Also, the light-receiving and light-emitting element may have other functional layers such as a hole blocking layer and an electron blocking layer.

[0216] The light-receiving and light-emitting element shown in FIG. 17G is different from the light-receiving and light-emitting element shown in FIG. 17A in that it does not have an active layer 273 and a light-emitting layer 283R, but has a layer 289 that serves as both a light-emitting layer and an active layer.

[0217] As the layer that serves as both a light-emitting layer and an active layer, for example, a layer containing three materials, namely, an n-type semiconductor that can be used for the active layer 273, a p-type semiconductor that can be used for the active layer 273, and a light-emitting substance that can be used for the light-emitting layer 283R, can be used.

[0218] Note that it is preferable that the absorption band on the lowest energy side of the absorption spectrum of the mixed material of the n-type semiconductor and the p-type semiconductor does not overlap with the maximum peak of the emission spectrum (PL spectrum) of the light-emitting substance, and it is more preferable that they are sufficiently separated.

[0219] [Configuration Example 2 of Display Device] Hereinafter, the detailed configuration of a display device according to one embodiment of the present invention will be described. Here, in particular, an example of a display device having a light-receiving element and a light-emitting element will be described.

[0220] 〔Configuration Example 2-1〕 FIG. 18A shows a cross-sectional view of the display device 300A. The display device 300A includes a substrate 351, a substrate 352, a light-receiving element 310, and a light-emitting element 390.

[0221] The light-emitting element 390 includes a pixel electrode 391, a buffer layer 312, a light-emitting layer 393, a buffer layer 314, and a common electrode 315 laminated in this order. The buffer layer 312 can include one or both of a hole injection layer and a hole transport layer. The light-emitting layer 393 includes an organic compound. The buffer layer 314 can include one or both of an electron injection layer and an electron transport layer. The light-emitting element 390 has a function of emitting visible light 321. Note that the display device 300A may further include a light-emitting element having a function of emitting infrared light.

[0222] The light-receiving element 310 includes a pixel electrode 311, a buffer layer 312, an active layer 313, a buffer layer 314, and a common electrode 315 laminated in this order. The active layer 313 includes an organic compound. The light-receiving element 310 has a function of detecting visible light. Note that the light-receiving element 310 may further have a function of detecting infrared light.

[0223] The buffer layer 312, the buffer layer 314, and the common electrode 315 are layers common to the light-emitting element 390 and the light-receiving element 310, and are provided across these elements. The buffer layer 312, the buffer layer 314, and the common electrode 315 have a portion overlapping with the active layer 313 and the pixel electrode 311, a portion overlapping with the light-emitting layer 393 and the pixel electrode 391, and a portion not overlapping with either of them.

[0224] In this embodiment, it is described that in both the light-emitting element 390 and the light-receiving element 310, the pixel electrode functions as an anode and the common electrode 315 functions as a cathode. That is, by driving the light-receiving element 310 with a reverse bias applied between the pixel electrode 311 and the common electrode 315, the display device 300A can detect the light incident on the light-receiving element 310, generate charges, and extract them as a current.

[0225] The pixel electrode 311, the pixel electrode 391, the buffer layer 312, the active layer 313, the buffer layer 314, the light-emitting layer 393, and the common electrode 315 may each have a single-layer structure or a stacked structure.

[0226] The pixel electrode 311 and the pixel electrode 391 are each located on the insulating layer 414. Each pixel electrode can be formed of the same material and in the same process. The ends of the pixel electrode 311 and the pixel electrode 391 are covered by the partition wall 416. Two adjacent pixel electrodes are electrically insulated from each other by the partition wall 416 (also referred to as being electrically separated).

[0227] As the partition wall 416, an organic insulating film is suitable. Examples of materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins. The partition wall 416 is a layer that transmits visible light. Instead of the partition wall 416, a partition wall that blocks visible light may be provided.

[0228] The common electrode 315 is a layer that is commonly used for the light-receiving element 310 and the light-emitting element 390.

[0229] The materials and film thicknesses of the pair of electrodes of the light-receiving element 310 and the light-emitting element 390 can be made equal. This can reduce the manufacturing cost and simplify the manufacturing process of the display device.

[0230] The display device 300A has a light-receiving element 310, a light-emitting element 390, a transistor 331, a transistor 332, etc. between a pair of substrates (substrate 351 and substrate 352).

[0231] In the light-receiving element 310, the buffer layer 312, the active layer 313, and the buffer layer 314 located between the pixel electrode 311 and the common electrode 315 can also be referred to as organic layers (layers containing organic compounds). The pixel electrode 311 preferably has a function of reflecting visible light. The common electrode 315 has a function of transmitting visible light. When the light-receiving element 310 is configured to detect infrared light, the common electrode 315 has a function of transmitting infrared light. Further, the pixel electrode 311 preferably has a function of reflecting infrared light.

[0232] The light-receiving element 310 has a function of detecting light. Specifically, the light-receiving element 310 is a photoelectric conversion element that receives the light 322 incident from the outside of the display device 300A and converts it into an electrical signal. The light 322 can also be the light reflected by the object from the light emitted by the light-emitting element 390. Further, the light 322 may be incident on the light-receiving element 310 through a lens or the like provided in the display device 300A.

[0233] In the light-emitting element 390, the buffer layer 312, the light-emitting layer 393, and the buffer layer 314 located between the pixel electrode 391 and the common electrode 315 can also be collectively referred to as an EL layer. The EL layer has at least the light-emitting layer 393. As described above, the pixel electrode 391 preferably has a function of reflecting visible light. The common electrode 315 has a function of transmitting visible light. When the display device 300A has a configuration in which a light-emitting element emits infrared light, the common electrode 315 has a function of transmitting infrared light. Further, the pixel electrode 391 preferably has a function of reflecting infrared light.

[0234] It is preferable that a microcavity structure is applied to the light-emitting element included in the display device of the present embodiment. The light-emitting element 390 may have an optical adjustment layer between the pixel electrode 391 and the common electrode 315. By applying the microresonator structure, light of a specific color can be strongly extracted from each light-emitting element.

[0235] The light-emitting element 390 has a function of emitting visible light. Specifically, the light-emitting element 390 is an electroluminescent element that emits light (here, visible light 321) toward the substrate 352 side by applying a voltage between the pixel electrode 391 and the common electrode 315.

[0236] The pixel electrode 311 of the light-receiving element 310 is electrically connected to the source or drain of the transistor 331 through an opening provided in the insulating layer 414. The pixel electrode 391 of the light-emitting element 390 is electrically connected to the source or drain of the transistor 332 through an opening provided in the insulating layer 414.

[0237] The transistor 331 and the transistor 332 are in contact with each other on the same layer (substrate 351 in FIG. 18A).

[0238] At least a part of the circuit electrically connected to the light-receiving element 310 is preferably formed of the same material and in the same process as the circuit electrically connected to the light-emitting element 390. Thereby, compared with the case where the two circuits are formed separately, the thickness of the display device can be reduced, and the manufacturing process can be simplified.

[0239] The light-receiving element 310 and the light-emitting element 390 are each preferably covered with a protective layer 395. In FIG. 18A, the protective layer 395 is provided in contact with the common electrode 315. By providing the protective layer 395, it is possible to suppress impurities such as water from entering the light-receiving element 310 and the light-emitting element 390, and to improve the reliability of the light-receiving element 310 and the light-emitting element 390. Further, the protective layer 395 and the substrate 352 are bonded together by an adhesive layer 342.

[0240] A light-shielding layer 358 is provided on the surface of the substrate 352 on the side of the substrate 351. The light-shielding layer 358 has openings at positions overlapping the light-emitting element 390 and at positions overlapping the light-receiving element 310.

[0241] Here, the light receiving element 310 detects the light reflected by the object from the light emission of the light emitting element 390. However, there are cases where the light emitted from the light emitting element 390 is reflected within the display device 300A and enters the light receiving element 310 without passing through the object. The light shielding layer 358 can suppress the influence of such stray light. For example, when the light shielding layer 358 is not provided, the light 323 emitted from the light emitting element 390 may be reflected by the substrate 352, and the reflected light 324 may enter the light receiving element 310. By providing the light shielding layer 358, it is possible to suppress the reflected light 324 from entering the light receiving element 310. Thereby, noise can be reduced and the sensitivity of the sensor using the light receiving element 310 can be enhanced.

[0242] As the light shielding layer 358, a material that blocks the light emission from the light emitting element can be used. The light shielding layer 358 preferably absorbs visible light. As the light shielding layer 358, for example, a black matrix can be formed using a metal material, or a resin material containing a pigment (such as carbon black) or a dye. The light shielding layer 358 may have a stacked structure of a red color filter, a green color filter, and a blue color filter.

[0243] 〔Configuration Example 2-2〕 The display device 300B shown in FIG. 18B is mainly different from the above-described display device 300A in that it has a lens 349.

[0244] The lens 349 is provided on the substrate 351 side of the substrate 352. The light 322 incident from the outside enters the light receiving element 310 through the lens 349. It is preferable to use a material having high transparency to visible light for the lens 349 and the substrate 352.

[0245] By allowing light to enter the light receiving element 310 through the lens 349, the range of light incident on the light receiving element 310 can be narrowed. Thereby, it is possible to suppress the imaging ranges from overlapping between the plurality of light receiving elements 310, and a clear image with less blurring can be captured.

[0246] In addition, the lens 349 can condense the incident light. Therefore, the amount of light incident on the light receiving element 310 can be increased. Thereby, the photoelectric conversion efficiency of the light receiving element 310 can be enhanced.

[0247] 〔Configuration Example 2-3〕 The display device 300C shown in FIG. 18C is mainly different from the above-described display device 300A in that the shape of the light shielding layer 358 is different.

[0248] The light shielding layer 358 is provided such that, in a plan view, an opening overlapping the light receiving element 310 is positioned inside the light receiving region of the light receiving element 310. The smaller the diameter of the opening of the light shielding layer 358 that overlaps the light receiving element 310, the narrower the range of light incident on the light receiving element 310 can be made. Thereby, it is possible to suppress the imaging ranges from overlapping between the plurality of light receiving elements 310, and a clear image with little blurring can be captured.

[0249] For example, the area of the opening of the light shielding layer 358 can be 80% or less, 70% or less, 60% or less, 50% or less, or 40% or less of the area of the light receiving region of the light receiving element 310, and 1% or more, 5% or more, or 10% or more. The smaller the area of the opening of the light shielding layer 358, the clearer the image that can be captured. On the other hand, if the area of the opening is too small, the amount of light reaching the light receiving element 310 may decrease, and the light receiving sensitivity may decrease. Therefore, it is preferably set appropriately within the above-described range. Note that the above-described upper limit value and lower limit value can be arbitrarily combined. Also, the light receiving region of the light receiving element 310 can be rephrased as the opening of the partition wall 416.

[0250] Note that the center of the opening of the light shielding layer 358 that overlaps the light receiving element 310 may be displaced from the center of the light receiving region of the light receiving element 310 in a plan view. Furthermore, in a plan view, the opening of the light shielding layer 358 may be configured not to overlap the light receiving region of the light receiving element 310. Thereby, only the obliquely incident light transmitted through the opening of the light shielding layer 358 can be received by the light receiving element 310. Thereby, the range of light incident on the light receiving element 310 can be more effectively limited, and a clear image can be captured.

[0251] 〔Configuration Example 2-4〕 The display device 300D shown in FIG. 19A is mainly different from the above-described display device 300A in that the buffer layer 312 is not a common layer.

[0252] The light receiving element 310 includes a pixel electrode 311, a buffer layer 312, an active layer 313, a buffer layer 314, and a common electrode 315. The light emitting element 390 includes a pixel electrode 391, a buffer layer 392, a light emitting layer 393, a buffer layer 314, and a common electrode 315. The active layer 313, the buffer layer 312, the light emitting layer 393, and the buffer layer 392 each have an island-shaped upper surface.

[0253] The buffer layer 312 and the buffer layer 392 may contain different materials or the same materials.

[0254] In this way, by separately forming the buffer layers for the light emitting element 390 and the light receiving element 310, the degree of freedom in selecting the materials for the buffer layers used in the light emitting element 390 and the light receiving element 310 is increased, making optimization easier. Also, by using the buffer layer 314 and the common electrode 315 as common layers, the manufacturing process is simplified and the manufacturing cost can be reduced compared to the case where the light emitting element 390 and the light receiving element 310 are manufactured separately.

[0255] 〔Configuration Example 2-5〕 The display device 300E shown in FIG. 19B is mainly different from the above-described display device 300A in that the buffer layer 314 is not a common layer.

[0256] The light receiving element 310 includes a pixel electrode 311, a buffer layer 312, an active layer 313, a buffer layer 314, and a common electrode 315. The light emitting element 390 includes a pixel electrode 391, a buffer layer 312, a light emitting layer 393, a buffer layer 394, and a common electrode 315. The active layer 313, the buffer layer 314, the light emitting layer 393, and the buffer layer 394 each have an island-shaped upper surface.

[0257] The buffer layer 314 and the buffer layer 394 may contain different materials or the same material.

[0258] In this way, by separately forming the buffer layers for the light-emitting element 390 and the light-receiving element 310, the degree of freedom in selecting the material of the buffer layer used for the light-emitting element 390 and the light-receiving element 310 is increased, making optimization easier. Further, by using the buffer layer 312 and the common electrode 315 as a common layer, the manufacturing process is simplified and the manufacturing cost can be reduced compared to the case where the light-emitting element 390 and the light-receiving element 310 are separately manufactured.

[0259] [Configuration Example 2-6] The display device 300F shown in FIG. 19C is mainly different from the above-described display device 300A in that the buffer layer 312 and the buffer layer 314 are not common layers.

[0260] The light-receiving element 310 includes a pixel electrode 311, a buffer layer 312, an active layer 313, a buffer layer 314, and a common electrode 315. The light-emitting element 390 includes a pixel electrode 391, a buffer layer 392, a light-emitting layer 393, a buffer layer 394, and a common electrode 315. The buffer layer 312, the active layer 313, the buffer layer 314, the buffer layer 392, the light-emitting layer 393, and the buffer layer 394 each have an island-shaped upper surface shape.

[0261] In this way, by separately forming the buffer layers for the light-emitting element 390 and the light-receiving element 310, the degree of freedom in selecting the material of the buffer layer used for the light-emitting element 390 and the light-receiving element 310 is increased, making optimization easier. Further, by using the common electrode 315 as a common layer, the manufacturing process is simplified and the manufacturing cost can be reduced compared to the case where the light-emitting element 390 and the light-receiving element 310 are separately manufactured.

[0262] [Configuration Example 3 of Display Device] Hereinafter, the detailed configuration of a display device according to an aspect of the present invention will be described. Here, in particular, an example of a display device having a light-receiving and light-emitting element and a light-emitting element will be described.

[0263] In the following, parts that overlap with the above may be incorporated by reference and the description may be omitted.

[0264] 〔Configuration Example 3-1〕 FIG. 20A shows a cross-sectional view of the display device 300G. The display device 300G includes a light-emitting and receiving element 390SR, a light-emitting element 390G, and a light-emitting element 390B.

[0265] The light-emitting and receiving element 390SR has a function as a light-emitting element that emits red light 321R and a function as a photoelectric conversion element that receives light 322. The light-emitting element 390G can emit green light 321G. The light-emitting element 390B can emit blue light 321B.

[0266] The light-emitting and receiving element 390SR includes a pixel electrode 311, a buffer layer 312, an active layer 313, a light-emitting layer 393R, a buffer layer 314, and a common electrode 315. The light-emitting element 390G includes a pixel electrode 391G, a buffer layer 312, a light-emitting layer 393G, a buffer layer 314, and a common electrode 315. The light-emitting element 390B includes a pixel electrode 391B, a buffer layer 312, a light-emitting layer 393B, a buffer layer 314, and a common electrode 315.

[0267] The buffer layer 312, the buffer layer 314, and the common electrode 315 are layers common to the light-emitting and receiving element 390SR, the light-emitting element 390G, and the light-emitting element 390B (common layers) and are provided across these elements. The active layer 313, the light-emitting layer 393R, the light-emitting layer 393G, and the light-emitting layer 393B each have an island-shaped upper surface shape. In FIG. 20A, although an example is shown in which the laminate of the active layer 313 and the light-emitting layer 393R, the light-emitting layer 393G, and the light-emitting layer 393B are provided separately, they may have a region where two adjacent ones overlap.

[0268] Similar to the display device 300D, the display device 300E, or the display device 300F, the display device 300G can be configured not to use one or both of the buffer layer 312 and the buffer layer 314 as a common layer.

[0269] The pixel electrode 311 is electrically connected to one of the source and drain of the transistor 331. The pixel electrode 391G is electrically connected to one of the source and drain of the transistor 332G. The pixel electrode 391B is electrically connected to one of the source and drain of the transistor 332B.

[0270] With such a configuration, a higher-definition display device can be realized.

[0271] 〔Configuration Example 3-2〕 The display device 300H shown in FIG. 20B is mainly different from the above-described display device 300G in that the configuration of the light-emitting and receiving element 390SR is different.

[0272] The light-emitting and receiving element 390SR has a light-emitting and receiving layer 318R in place of the active layer 313 and the light-emitting layer 393R.

[0273] The light-emitting and receiving layer 318R is a layer having both the function of a light-emitting layer and the function of an active layer. For example, a layer containing the above-described light-emitting substance, an n-type semiconductor, and a p-type semiconductor can be used.

[0274] With such a configuration, the manufacturing process can be further simplified, making it easier to reduce costs.

[0275] [Configuration Example 4 of Display Device] Hereinafter, a more specific configuration of the display device according to one aspect of the present invention will be described.

[0276] FIG. 21 shows a perspective view of the display device 400, and FIG. 22A shows a cross-sectional view of the display device 400.

[0277] The display device 400 has a configuration in which a substrate 353 and a substrate 354 are bonded together. In FIG. 21, the substrate 354 is indicated by a broken line.

[0278] The display device 400 includes a display unit 362, a circuit 364, a wiring 365, etc. FIG. 21 shows an example in which an IC (integrated circuit) 373 and an FPC 372 are mounted on the display device 400. Therefore, the configuration shown in FIG. 21 can also be referred to as a display module having a display device 400, an IC, and an FPC.

[0279] As the circuit 364, for example, a scanning line driving circuit can be used.

[0280] The wiring 365 has a function of supplying signals and power to the display unit 362 and the circuit 364. The signals and power are input to the wiring 365 from the outside via the FPC 372, or input to the wiring 365 from the IC 373.

[0281] FIG. 21 shows an example in which an IC 373 is provided on a substrate 353 by a COG (Chip On Glass) method, a COF (Chip On Film) method, or the like. As the IC 373, for example, an IC having a scanning line driving circuit or a signal line driving circuit can be applied. Note that the display device 400 and the display module may be configured without an IC. Further, the IC may be mounted on the FPC by a COF method or the like.

[0282] FIG. 22A shows an example of a cross section when a part of the region including the FPC 372, a part of the region including the circuit 364, a part of the region including the display unit 362, and a part of the region including the end portion of the display device 400 shown in FIG. 21 are each cut.

[0283] The display device 400 shown in FIG. 22A has a transistor 408, a transistor 409, a transistor 410, a light emitting element 390, a light receiving element 310, etc. between a substrate 353 and a substrate 354.

[0284] The substrate 354 and the protective layer 395 are adhered via an adhesive layer 342, and a solid sealing structure is applied to the display device 400.

[0285] The substrate 353 and the insulating layer 412 are bonded by an adhesive layer 355.

[0286] As a method for manufacturing the display device 400, first, a manufacturing substrate provided with an insulating layer 412, each transistor, a light receiving element 310, a light emitting element 390, etc., and a substrate 354 provided with a light shielding layer 358, etc. are bonded together by an adhesive layer 342. Then, the substrate 353 is bonded to the exposed surface of the manufacturing substrate after peeling off the manufacturing substrate, whereby each component formed on the manufacturing substrate is transferred to the substrate 353. The substrate 353 and the substrate 354 are each preferably flexible. Thereby, the flexibility of the display device 400 can be enhanced.

[0287] The light emitting element 390 has a stacked structure in which a pixel electrode 391, a buffer layer 312, a light emitting layer 393, a buffer layer 314, and a common electrode 315 are stacked in this order from the insulating layer 414 side. The pixel electrode 391 is connected to one of the source and drain of the transistor 408 through an opening provided in the insulating layer 414. The transistor 408 has a function of controlling the current flowing through the light emitting element 390.

[0288] The light receiving element 310 has a stacked structure in which a pixel electrode 311, a buffer layer 312, an active layer 313, a buffer layer 314, and a common electrode 315 are stacked in this order from the insulating layer 414 side. The pixel electrode 311 is connected to one of the source and drain of the transistor 409 through an opening provided in the insulating layer 414. The transistor 409 has a function of controlling the transfer of the charges accumulated in the light receiving element 310.

[0289] The light emitted from the light emitting element 390 is emitted toward the substrate 354 side. Further, light is incident on the light receiving element 310 through the substrate 354 and the adhesive layer 342. It is preferable to use a material having high transparency to visible light for the substrate 354.

[0290] The pixel electrode 311 and the pixel electrode 391 can be fabricated using the same material and the same process. The buffer layer 312, the buffer layer 314, and the common electrode 315 are commonly used for the light receiving element 310 and the light emitting element 390. The light receiving element 310 and the light emitting element 390 can have the same configuration except that the configurations of the active layer 313 and the light emitting layer 393 are different. As a result, the light receiving element 310 can be incorporated into the display device 400 without significantly increasing the manufacturing process.

[0291] A light shielding layer 358 is provided on the surface of the substrate 354 on the side of the substrate 353. The light shielding layer 358 has openings at positions overlapping the light emitting element 390 and the light receiving element 310 respectively. By providing the light shielding layer 358, the range in which the light receiving element 310 detects light can be controlled. As described above, it is preferable to control the light incident on the light receiving element 310 by adjusting the position and area of the opening of the light shielding layer provided at the position overlapping the light receiving element 310. Further, by having the light shielding layer 358, it is possible to suppress light from directly entering the light receiving element 310 from the light emitting element 390 without passing through an object. Therefore, a sensor with less noise and high sensitivity can be realized.

[0292] The ends of the pixel electrode 311 and the pixel electrode 391 are covered by a partition wall 416. The pixel electrode 311 and the pixel electrode 391 contain a material that reflects visible light, and the common electrode 315 contains a material that transmits visible light.

[0293] FIG. 22A shows an example having a region where a part of the active layer 313 and a part of the light emitting layer 393 overlap. The overlapping portion of the active layer 313 and the light emitting layer 393 preferably overlaps the light shielding layer 358 and the partition wall 416.

[0294] The transistor 408, the transistor 409, and the transistor 410 are all formed on the substrate 353. These transistors can be fabricated using the same material and the same process.

[0295] On the substrate 353, an insulating layer 412, an insulating layer 411, an insulating layer 425, an insulating layer 415, an insulating layer 418, and an insulating layer 414 are provided in this order via an adhesive layer 355. A part of each of the insulating layer 411 and the insulating layer 425 functions as a gate insulating layer of each transistor. The insulating layer 415 and the insulating layer 418 are provided to cover the transistor. The insulating layer 414 is provided to cover the transistor and has a function as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistor are not limited, and each may be a single layer or two or more layers.

[0296] It is preferable to use a material in which impurities such as water and hydrogen hardly diffuse in at least one of the insulating layers covering the transistor. Thereby, the insulating layer can function as a barrier layer. By adopting such a configuration, diffusion of impurities from the outside into the transistor can be effectively suppressed, and the reliability of the display device can be improved.

[0297] As the insulating layer 411, the insulating layer 412, the insulating layer 425, the insulating layer 415, and the insulating layer 418, it is preferable to use an inorganic insulating film respectively. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, or the like can be used. Further, a hafnium oxide film, a hafnium oxynitride film, a hafnium nitride oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used. Further, two or more of the above-described insulating films may be laminated and used.

[0298] Here, the organic insulating film often has lower barrier properties than the inorganic insulating film. Therefore, it is preferable that the organic insulating film has an opening near the end of the display device 400. In the region 428 shown in FIG. 22A, an opening is formed in the insulating layer 414. Thereby, it is possible to suppress the entry of impurities from the end of the display device 400 through the organic insulating film. Alternatively, the organic insulating film may be formed such that the end of the organic insulating film is inside the end of the display device 400 so that the organic insulating film is not exposed at the end of the display device 400.

[0299] In the region 428 near the end of the display device 400, it is preferable that the insulating layer 418 and the protective layer 395 are in contact with each other through the opening of the insulating layer 414. In particular, it is preferable that the inorganic insulating film of the insulating layer 418 and the inorganic insulating film of the protective layer 395 are in contact with each other. Thereby, it is possible to suppress the entry of impurities from the outside into the display unit 362 through the organic insulating film. Therefore, the reliability of the display device 400 can be improved.

[0300] The insulating layer 414 that functions as a planarization layer is preferably an organic insulating film. Examples of materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene-based resin, phenol resin, and precursors of these resins.

[0301] By providing the protective layer 395 that covers the light-emitting element 390 and the light-receiving element 310, it is possible to suppress the entry of impurities such as water into the light-emitting element 390 and the light-receiving element 310, and improve the reliability of these elements.

[0302] The protective layer 395 may be a single layer or a laminated structure. For example, the protective layer 395 may have a laminated structure of an organic insulating film and an inorganic insulating film. At this time, it is preferable that the end of the inorganic insulating film extends outside the end of the organic insulating film.

[0303] FIG. 22B shows a cross-sectional view of the transistor 401a that can be used for the transistors 408, 409, and 410.

[0304] The transistor 401a is provided on an insulating layer 412 (not shown), and has a conductive layer 421 that functions as a first gate, an insulating layer 411 that functions as a first gate insulating layer, a semiconductor layer 431, an insulating layer 425 that functions as a second gate insulating layer, and a conductive layer 423 that functions as a second gate. The insulating layer 411 is located between the conductive layer 421 and the semiconductor layer 431. The insulating layer 425 is located between the conductive layer 423 and the semiconductor layer 431.

[0305] The semiconductor layer 431 has a region 431i and a pair of regions 431n. The region 431i functions as a channel formation region. One of the pair of regions 431n functions as a source, and the other functions as a drain. The region 431n has a higher carrier concentration and higher conductivity than the region 431i. The conductive layers 422a and 422b are connected to the regions 431n respectively through openings provided in the insulating layers 418 and 415.

[0306] FIG. 22C shows a cross-sectional view of the transistor 401b that can be used for the transistors 408, 409, and 410. Further, FIG. 22C shows an example in which the insulating layer 415 is not provided. In the transistor 401b, the insulating layer 425 is processed in the same manner as the conductive layer 423, and the insulating layer 418 is in contact with the region 431n.

[0307] Note that the structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverse staggered transistor, or the like can be used. Also, either a top gate type or a bottom gate type transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which a channel is formed.

[0308] For transistors 408, 409, and 410, a configuration is applied in which a semiconductor layer where a channel is formed is sandwiched by two gates. The transistors may be driven by connecting the two gates and supplying the same signal to them. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0309] The crystallinity of the semiconductor material used for the transistors is not particularly limited, and any of an amorphous semiconductor, a single crystal semiconductor, or a semiconductor having crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, or a semiconductor having a crystalline region in part) may be used. Using a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed.

[0310] The semiconductor layer of the transistor preferably has a metal oxide (also referred to as an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may have silicon. Examples of silicon include amorphous silicon and crystalline silicon (such as low-temperature polysilicon and single crystal silicon).

[0311] The semiconductor layer preferably has, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0312] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also denoted as IGZO) as the semiconductor layer.

[0313] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of the atomic ratio of the metal elements in such an In-M-Zn oxide include a composition of In:M:Zn = 1:1:1 or in the vicinity thereof, a composition of In:M:Zn = 1:1:1.2 or in the vicinity thereof, a composition of In:M:Zn = 2:1:3 or in the vicinity thereof, a composition of In:M:Zn = 3:1:2 or in the vicinity thereof, a composition of In:M:Zn = 4:2:3 or in the vicinity thereof, a composition of In:M:Zn = 4:2:4.1 or in the vicinity thereof, a composition of In:M:Zn = 5:1:3 or in the vicinity thereof, a composition of In:M:Zn = 5:1:6 or in the vicinity thereof, a composition of In:M:Zn = 5:1:7 or in the vicinity thereof, a composition of In:M:Zn = 5:1:8 or in the vicinity thereof, a composition of In:M:Zn = 6:1:6 or in the vicinity thereof, a composition of In:M:Zn = 5:2:5 or in the vicinity thereof, and the like. The composition in the vicinity means a range including ±30% of the desired atomic ratio.

[0314] For example, when the atomic ratio is described as In:Ga:Zn = 4:2:3 or in the vicinity thereof, when the atomic ratio of In is 4, it includes cases where the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. Also, when the atomic ratio is described as In:Ga:Zn = 5:1:6 or in the vicinity thereof, when the atomic ratio of In is 5, it includes cases where the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. Also, when the atomic ratio is described as In:Ga:Zn = 1:1:1 or in the vicinity thereof, when the atomic ratio of In is 1, it includes cases where the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0315] The transistor 410 included in the circuit 364, and the transistors 408 and 409 included in the display unit 362 may have the same structure or different structures. The structures of the plurality of transistors included in the circuit 364 may all be the same or there may be two or more types. Similarly, the structures of the plurality of transistors included in the display unit 362 may all be the same or there may be two or more types.

[0316] In the region of the substrate 353 where the substrate 354 does not overlap, a connection portion 404 is provided. In the connection portion 404, the wiring 365 is electrically connected to the FPC 372 via the conductive layer 366 and the connection layer 442. On the upper surface of the connection portion 404, the conductive layer 366 obtained by processing the same conductive film as the pixel electrodes 311 and 391 is exposed. Thereby, the connection portion 404 and the FPC 372 can be electrically connected via the connection layer 442.

[0317] Various optical members can be arranged outside the substrate 354. Examples of the optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an antireflection layer, and a condensing film. Further, outside the substrate 354, an antistatic film for suppressing the adhesion of dust, a water-repellent film for making it difficult for dirt to adhere, a hard coat film for suppressing the generation of scratches during use, a shock absorption layer, etc. may be arranged.

[0318] When a flexible material is used for the substrates 353 and 354, the flexibility of the display device can be enhanced. Further, not limited thereto, glass, quartz, ceramic, sapphire, resin, etc. can be used for the substrates 353 and 354 respectively.

[0319] As the adhesive layer, various curable adhesives such as photocurable adhesives such as ultraviolet curable type, reaction curable adhesives, thermosetting adhesives, anaerobic adhesives, etc. can be used. Examples of these adhesives include epoxy resin, acrylic resin, silicone resin, phenol resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, etc. In particular, materials with low moisture permeability such as epoxy resin are preferable. Also, a two-component mixed resin may be used. Also, an adhesive sheet or the like may be used.

[0320] As the connection layer, an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), etc. can be used.

[0321] As materials that can be used for conductive layers such as various wirings and electrodes constituting a display device, in addition to the gates, sources, and drains of transistors, metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys mainly composed of these metals can be mentioned. A film containing these materials can be used as a single layer or in a laminated structure.

[0322] Also, as a conductive material having translucency, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used. Alternatively, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing the metal materials can be used. Alternatively, nitrides of the metal materials (for example, titanium nitride) may be used. When using metal materials, alloy materials (or their nitrides), it is preferably made thin enough to have translucency. In addition, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of an alloy of silver and magnesium and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers such as various wirings and electrodes constituting a display device, or conductive layers (pixel electrodes or conductive layers functioning as common electrodes) of light-emitting elements and light-receiving elements (or light-emitting and receiving elements).

[0323] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxynitride, silicon nitride, and aluminum oxide.

[0324] This embodiment can be implemented in appropriate combination with at least some of the other embodiments described in this specification.

[0325] (Embodiment 3) In this embodiment, a metal oxide (also referred to as an oxide semiconductor) that can be used for the OS transistor described in the above embodiment will be described.

[0326] The metal oxide preferably contains at least indium or zinc. Particularly preferably, it contains indium and zinc. In addition to these, it is preferable that aluminum, gallium, yttrium, tin, etc. are contained. Further, one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc. may be contained.

[0327] Also, the metal oxide can be formed by a sputtering method, a chemical vapor deposition (CVD) method such as a metal organic chemical vapor deposition (MOCVD) method, an atomic layer deposition (ALD) method, etc.

[0328] <Classification of Crystal Structure> Examples of the crystal structure of the oxide semiconductor include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and poly crystal.

[0329] Note that the crystal structure of the film or substrate can be evaluated using an X-ray diffraction (XRD) spectrum. For example, it can be evaluated using the XRD spectrum obtained by grazing-incidence XRD (GIXD) measurement. Note that the GIXD method is also called the thin-film method or the Seemann-Bohlin method.

[0330] For example, in the case of a quartz glass substrate, the shape of the peak in the XRD spectrum is almost symmetric about the left and right. On the other hand, in the case of an IGZO film having a crystal structure, the shape of the peak in the XRD spectrum is asymmetric about the left and right. The fact that the shape of the peak in the XRD spectrum is asymmetric about the left and right indicates the presence of crystals in the film or the substrate. In other words, if the shape of the peak in the XRD spectrum is not symmetric about the left and right, it cannot be said that the film or the substrate is in an amorphous state.

[0331] In addition, the crystal structure of the film or substrate can be evaluated by the diffraction pattern (also referred to as the nano-beam electron diffraction pattern) observed by the nano-beam electron diffraction (NBED) method. For example, in the diffraction pattern of a quartz glass substrate, a halo is observed, and it can be confirmed that the quartz glass is in an amorphous state. Further, in the diffraction pattern of an IGZO film formed at room temperature, a spot-like pattern is observed instead of a halo. For this reason, it is presumed that the IGZO film formed at room temperature is in an intermediate state that is neither a crystalline state nor an amorphous state, and it cannot be concluded that it is in an amorphous state.

[0332] <<Structure of Oxide Semiconductor>> Note that when focusing on the structure, the oxide semiconductor may be classified differently from the above. For example, the oxide semiconductor can be divided into a single-crystalline oxide semiconductor and other non-single-crystalline oxide semiconductors. Examples of the non-single-crystalline oxide semiconductor include the above-mentioned CAAC-OS and nc-OS. In addition, the non-single-crystalline oxide semiconductor includes a polycrystalline oxide semiconductor, an amorphous-like oxide semiconductor (a-like OS), an amorphous oxide semiconductor, and the like.

[0333] Here, the details of the above-mentioned CAAC-OS, nc-OS, and a-like OS will be described.

[0334] [CAAC-OS] CAAC-OS is an oxide semiconductor having a plurality of crystal regions, and the plurality of crystal regions have their c-axes oriented in a specific direction. Here, the specific direction means the thickness direction of the CAAC-OS film, the normal direction of the surface on which the CAAC-OS film is formed, or the normal direction of the surface of the CAAC-OS film. Also, the crystal region is a region having periodicity in the atomic arrangement. When the atomic arrangement is regarded as a lattice arrangement, the crystal region is also a region where the lattice arrangements are aligned. Further, CAAC-OS has a region where a plurality of crystal regions are connected in the a-b plane direction, and this region may have strain. Here, the strain refers to a portion where the orientation of the lattice arrangement changes between a region where the lattice arrangements are aligned and another region where the lattice arrangements are aligned in the region where the plurality of crystal regions are connected. That is, CAAC-OS is an oxide semiconductor with its c-axis oriented and no obvious orientation in the a-b plane direction.

[0335] Each of the above-mentioned plurality of crystal regions is composed of one or a plurality of minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystal region is composed of one minute crystal, the maximum diameter of the crystal region is less than 10 nm. Also, when a crystal region is composed of a number of minute crystals, the size of the crystal region may be on the order of several tens of nm.

[0336] In an In-M-Zn oxide (where element M is one or more selected from aluminum, gallium, yttrium, tin, titanium, etc.), CAAC-OS tends to have a layered crystal structure (also referred to as a layered structure) in which a layer containing indium (In) and oxygen (hereinafter, the In layer) and a layer containing element M, zinc (Zn), and oxygen (hereinafter, the (M,Zn) layer) are laminated. Note that indium and element M are mutually substitutable. Therefore, the (M,Zn) layer may contain indium. Also, the In layer may contain element M. Note that the In layer may also contain Zn. The layered structure is observed as a lattice image, for example, in a high-resolution TEM (Transmission Electron Microscope) image.

[0337] When performing structural analysis on a CAAC-OS film using, for example, an XRD apparatus, in an Out-of-plane XRD measurement using a θ / 2θ scan, a peak indicating c-axis orientation is detected at 2θ = 31° or in the vicinity thereof. Note that the position of the peak indicating c-axis orientation (the value of 2θ) may vary depending on the type and composition of the metal elements constituting CAAC-OS.

[0338] Also, for example, in the electron diffraction pattern of a CAAC-OS film, a plurality of bright spots (spots) are observed. Note that one spot and another spot are observed at point-symmetric positions with the spot of the incident electron beam transmitted through the sample (also referred to as the direct spot) as the center of symmetry.

[0339] When observing the crystal region from the specific direction, the lattice arrangement within the crystal region is based on a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be an irregular hexagon. Further, in the above-mentioned strain, there may be a lattice arrangement such as a pentagon or a heptagon. In CAAC-OS, even in the vicinity of the strain, a clear grain boundary cannot be confirmed. That is, it can be seen that the formation of grain boundaries is suppressed by the strain of the lattice arrangement. This is presumably because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the a-b plane direction and the interatomic bond distance changes due to the substitution of metal atoms.

[0340] Note that a crystal structure in which a clear grain boundary is confirmed is called a so-called polycrystal. Grain boundaries can become recombination centers, and carriers are likely to be trapped, causing a decrease in the on-current of the transistor and a decrease in the field-effect mobility. Therefore, CAAC-OS in which no clear grain boundary is confirmed is one of the crystalline oxides having a crystal structure suitable for the semiconductor layer of the transistor. In addition, for forming CAAC-OS, a configuration having Zn is preferable. For example, In-Zn oxide and In-Ga-Zn oxide are preferable because they can suppress the generation of grain boundaries more than In oxide.

[0341] CAAC-OS is an oxide semiconductor with high crystallinity and no clear grain boundary confirmed. Therefore, it can be said that in CAAC-OS, a decrease in electron mobility due to grain boundaries is less likely to occur. In addition, since the crystallinity of the oxide semiconductor may decrease due to the incorporation of impurities, the generation of defects, etc., it can also be said that CAAC-OS is an oxide semiconductor with few impurities and defects (such as oxygen deficiency). Therefore, the physical properties of the oxide semiconductor having CAAC-OS are stable. Therefore, the oxide semiconductor having CAAC-OS is resistant to heat and has high reliability. In addition, CAAC-OS is also stable against a high temperature (so-called thermal budget) in the manufacturing process. Therefore, when CAAC-OS is used for the OS transistor, it is possible to expand the degree of freedom in the manufacturing process.

[0342] [nc-OS] nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). In other words, nc-OS has minute crystals. Since the size of the minute crystals is, for example, 1 nm or more and 10 nm or less, particularly 1 nm or more and 3 nm or less, the minute crystals are also referred to as nanocrystals. Further, nc-OS does not show regularity in the crystal orientation among different nanocrystals. Therefore, no orientation is observed in the entire film. Accordingly, depending on the analysis method, nc-OS may not be distinguishable from a-like OS or an amorphous oxide semiconductor. For example, when a structural analysis is performed on an nc-OS film using an XRD apparatus, no peak indicating crystallinity is detected in an Out-of-plane XRD measurement using θ / 2θ scan. Further, when electron beam diffraction (also referred to as restricted view electron beam diffraction) using an electron beam having a probe diameter larger than that of the nanocrystals (for example, 50 nm or more) is performed on the nc-OS film, a diffraction pattern such as a halo pattern is observed. On the other hand, when electron beam diffraction (also referred to as nano-beam electron beam diffraction) using an electron beam having a probe diameter close to or smaller than that of the nanocrystals (for example, 1 nm or more and 30 nm or less) is performed on the nc-OS film, an electron beam diffraction pattern in which a plurality of spots are observed in a ring-shaped region centered on a direct spot may be obtained.

[0343] [a-like OS] a-like OS is an oxide semiconductor having a structure between nc-OS and an amorphous oxide semiconductor. a-like OS has a loose or low-density region. That is, a-like OS has lower crystallinity compared with nc-OS and CAAC-OS. Further, a-like OS has a higher hydrogen concentration in the film compared with nc-OS and CAAC-OS.

[0344] [[Constitution of Oxide Semiconductor]] Next, details of the above-described CAC-OS will be described. Note that CAC-OS relates to the material constitution.

[0345] [CAC-OS] CAC-OS is, for example, a component of a material in which the elements constituting the metal oxide are unevenly distributed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or in the vicinity thereof. In the following, in the metal oxide, a state in which one or more metal elements are unevenly distributed and the regions having the metal elements are mixed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or in the vicinity thereof is also referred to as a mosaic state or a patch state.

[0346] Furthermore, CAC-OS becomes a mosaic state by separating the material into a first region and a second region, and the first region is a structure distributed in the film (hereinafter also referred to as a cloud state). That is, CAC-OS is a composite metal oxide having a structure in which the first region and the second region are mixed.

[0347] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting CAC-OS in the In-Ga-Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in CAC-OS in the In-Ga-Zn oxide, the first region is a region where [In] is larger than [In] in the composition of the CAC-OS film. The second region is a region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Or, for example, the first region is a region where [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region. The second region is a region where [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.

[0348] Specifically, the first region is a region mainly composed of indium oxide, indium zinc oxide, etc. The second region is a region mainly composed of gallium oxide, gallium zinc oxide, etc. That is, the first region can be rephrased as a region mainly composed of In. The second region can be rephrased as a region mainly composed of Ga.

[0349] Note that there may be cases where no clear boundary can be observed between the above-mentioned first region and the second region.

[0350] In addition, CAC-OS in In-Ga-Zn oxide refers to a structure in a material composition containing In, Ga, Zn, and O, where regions mainly composed of Ga and regions mainly composed of In are each in a mosaic pattern and these regions are randomly present. Therefore, it is presumed that CAC-OS has a structure in which metal elements are unevenly distributed.

[0351] CAC-OS can be formed, for example, by a sputtering method under conditions where the substrate is not heated. Also, when forming CAC-OS by a sputtering method, any one or more selected from an inert gas (typically argon), oxygen gas, and nitrogen gas may be used as the film-forming gas. Further, the lower the flow rate ratio of oxygen gas to the total flow rate of the film-forming gas during film formation, the more preferable it is. For example, it is preferable to set the flow rate ratio of oxygen gas to the total flow rate of the film-forming gas during film formation to 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0352] Also, for example, in CAC-OS in In-Ga-Zn oxide, it can be confirmed by EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX) that the region mainly composed of In (the first region) and the region mainly composed of Ga (the second region) are unevenly distributed and have a mixed structure.

[0353] Here, the first region is a region with higher conductivity compared to the second region. That is, when carriers flow through the first region, the conductivity as a metal oxide is exhibited. Therefore, when the first region is distributed in a cloud-like manner in the metal oxide, a high field-effect mobility (μ) can be achieved.

[0354] On the one hand, the second region is a region with higher insulation compared to the first region. That is, by distributing the second region in the metal oxide, the leakage current can be suppressed.

[0355] Therefore, when using CAC-OS for a transistor, the conductivity caused by the first region and the insulation caused by the second region act complementarily, enabling the function of switching (turning on / off) to be imparted to the CAC-OS. That is, CAC-OS has a conductive function in a part of the material and an insulating function in a part of the material, and has a semiconductor function as a whole. By separating the conductive function and the insulating function, both functions can be maximally enhanced. Thus, by using CAC-OS for a transistor, a high on-current (I on )、high field-effect mobility (μ), and good switching operation can be realized.

[0356] In addition, a transistor using CAC-OS has high reliability. Therefore, CAC-OS is optimal for various semiconductor devices including display devices.

[0357] Oxide semiconductors have various structures and each has different characteristics. The oxide semiconductor of one aspect of the present invention may have two or more of amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, CAC-OS, nc-OS, and CAAC-OS.

[0358] <Transistor having an oxide semiconductor> Subsequently, the case of using the above oxide semiconductor for a transistor will be described.

[0359] By using the above oxide semiconductor for a transistor, a transistor with high field-effect mobility can be realized. Also, a highly reliable transistor can be realized.

[0360] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. For example, the carrier concentration of the oxide semiconductor is 1×10 17 cm -3 or less, preferably 1×10 15 cm -3 or less, more preferably 1×10 13 cm -3 or less, still more preferably 1×10 11 cm -3 or less, and even more preferably less than 1×10 10 cm -3 and 1×10 -9 cm -3 or more. When reducing the carrier concentration of the oxide semiconductor film, the impurity concentration in the oxide semiconductor film may be reduced and the density of defect levels may be reduced. In this specification and the like, a low impurity concentration and a low density of defect levels are referred to as high-purity intrinsic or substantially high-purity intrinsic. In some cases, an oxide semiconductor with a low carrier concentration is referred to as a high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor.

[0361] In addition, since an oxide semiconductor film that is high-purity intrinsic or substantially high-purity intrinsic has a low density of defect levels, the density of trap levels may also be low.

[0362] In addition, the charge trapped in the trap levels of the oxide semiconductor takes a long time to disappear and may behave like a fixed charge. Therefore, a transistor in which a channel formation region is formed in an oxide semiconductor with a high trap level density may have unstable electrical characteristics.

[0363] Therefore, in order to stabilize the electrical characteristics of the transistor, it is effective to reduce the impurity concentration in the oxide semiconductor. In addition, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in the adjacent film. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon, and the like.

[0364] <Impurities> Here, the effects of various impurities in the oxide semiconductor will be described.

[0365] In an oxide semiconductor, when silicon or carbon, which is one of the Group 14 elements, is contained, defect levels are formed in the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (the concentration obtained by secondary ion mass spectrometry (SIMS)) are set to 2×10 18 atoms / cm 3 Hereinafter, preferably 2×10 17 atoms / cm 3 or less.

[0366] In addition, when an oxide semiconductor contains an alkali metal or an alkaline earth metal, defect levels may be formed and carriers may be generated. Therefore, a transistor using an oxide semiconductor containing an alkali metal or an alkaline earth metal tends to have normally-on characteristics. For this reason, the concentration of the alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS is set to 1×10 18 atoms / cm 3 or less, preferably 2×10 16 atoms / cm 3 or less.

[0367] In an oxide semiconductor, when nitrogen is contained, electrons as carriers are generated, the carrier concentration increases, and it tends to be n-type. As a result, a transistor using an oxide semiconductor containing nitrogen as a semiconductor tends to have normally-on characteristics. Or, when nitrogen is contained in an oxide semiconductor, trap levels may be formed. As a result, the electrical characteristics of the transistor may become unstable. For this reason, the nitrogen concentration in the oxide semiconductor obtained by SIMS is set to less than 5×10 19 atoms / cm 3 preferably 5×10 18 atoms / cm 3 or less, more preferably 1×10 18 atoms / cm3 Next, more preferably, 5 × 10 17 atoms / cm 3 or less.

[0368] In addition, since hydrogen contained in the oxide semiconductor reacts with oxygen that binds to metal atoms to form water, oxygen vacancies may be formed. When hydrogen enters these oxygen vacancies, carriers, i.e., electrons, may be generated. Also, a part of hydrogen may bind to oxygen that binds to metal atoms to generate carriers, i.e., electrons. Therefore, a transistor using an oxide semiconductor containing hydrogen tends to have normally-on characteristics. For this reason, it is preferable that hydrogen in the oxide semiconductor be reduced as much as possible. Specifically, in the oxide semiconductor, the hydrogen concentration obtained by SIMS is 1 × 10 20 atoms / cm 3 or less, preferably 1 × 10 19 atoms / cm 3 or less, more preferably 5 × 10 18 atoms / cm 3 or less, and even more preferably 1 × 10 18 atoms / cm 3 or less.

[0369] By using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of the transistor, stable electrical characteristics can be imparted.

[0370] This embodiment can be appropriately combined with other embodiments.

[0371] (Embodiment 4) In this embodiment, an electronic device according to an aspect of the present invention will be described with reference to FIGS. 23A to 25F.

[0372] An electronic device according to an aspect of the present invention can perform imaging on a display unit and detect touch operations (contact or proximity). Thereby, the functionality, convenience, etc. of the electronic device can be enhanced.

[0373] Examples of the electronic device according to one aspect of the present invention include, for example, electronic devices having a relatively large screen such as a television device, a desktop or laptop personal computer, a monitor for a computer, a digital signage, a large game machine such as a pachinko machine, and in addition, a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a portable information terminal, an audio reproduction device, and the like.

[0374] The electronic device according to one aspect of the present invention may have a sensor (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays).

[0375] The electronic device according to one aspect of the present invention can have various functions. For example, it can have a function of displaying various information (still images, moving images, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date or time, etc., a function of executing various software (programs), a wireless communication function, a function of reading a program or data recorded on a recording medium, and the like.

[0376] The electronic device 6500 shown in FIG. 23A is a portable information terminal that can be used as a smartphone.

[0377] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display unit 6502 has a touch panel function.

[0378] The display device shown in Embodiment 2 can be applied to the display unit 6502.

[0379] FIG. 23B is a schematic cross-sectional view including an end portion of the housing 6501 on the microphone 6506 side.

[0380] A protective member 6510 having translucency is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0381] The display panel 6511, the optical member 6512, and the touch sensor panel 6513 are fixed to the protective member 6510 by an adhesive layer (not shown).

[0382] In a region outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded-back portion. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on the printed circuit board 6517.

[0383] A flexible display according to an aspect of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Further, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted while suppressing the thickness of the electronic device. Further, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow bezel can be realized.

[0384] By using the display device shown in Embodiment 2 for the display panel 6511, imaging can be performed by the display unit 6502. For example, a fingerprint can be imaged by the display panel 6511 to perform fingerprint authentication.

[0385] Since the display unit 6502 further has a touch sensor panel 6513, a touch panel function can be imparted to the display unit 6502. As the touch sensor panel 6513, various methods such as a capacitance method, a resistive film method, a surface acoustic wave method, an infrared method, an optical method, and a pressure-sensitive method can be used. Alternatively, the display panel 6511 may function as a touch sensor, and in that case, the touch sensor panel 6513 may not be provided.

[0386] FIG. 24A shows an example of a television apparatus. In the television apparatus 7100, a display unit 7000 is incorporated in a housing 7101. Here, a configuration in which the housing 7101 is supported by a stand 7103 is shown.

[0387] The display device shown in Embodiment 2 can be applied to the display unit 7000.

[0388] The operation of the television apparatus 7100 shown in FIG. 24A can be performed by an operation switch provided in the housing 7101 or a separate remote control operation unit 7111. Alternatively, the display unit 7000 may be provided with a touch sensor, and the television apparatus 7100 may be operated by touching the display unit 7000 with a finger or the like. The remote control operation unit 7111 may have a display unit that displays information output from the remote control operation unit 7111. Channel and volume operations can be performed by operation keys or a touch panel provided in the remote control operation unit 7111, and the video displayed on the display unit 7000 can be operated.

[0389] Note that the television apparatus 7100 has a configuration including a receiver and a modem. The receiver can receive general television broadcasts. Also, by connecting to a communication network by wire or wirelessly via the modem, one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers) information communication is also possible.

[0390] FIG. 24B shows an example of a notebook personal computer. The notebook personal computer 7200 has a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. A display unit 7000 is incorporated in the housing 7211.

[0391] The display device shown in Embodiment 2 can be applied to the display unit 7000.

[0392] Figures 24C and 24D show an example of digital signage.

[0393] The digital signage 7300 shown in FIG. 24C includes a housing 7301, a display unit 7000, a speaker 7303, etc. Further, it can have an LED lamp, operation keys (including a power switch or operation switches), connection terminals, various sensors, a microphone, etc.

[0394] FIG. 24D shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0395] In FIGS. 24C and 24D, the display device shown in Embodiment 2 can be applied to the display unit 7000.

[0396] The larger the display unit 7000 is, the more information can be provided at once. Also, the larger the display unit 7000 is, the more likely it is to catch people's eyes, for example, enhancing the advertising effect.

[0397] By applying a touch panel to the display unit 7000, not only can an image or video be displayed on the display unit 7000, but also the user can operate it intuitively, which is preferable. Also, when used for applications such as providing route information or traffic information, the usability can be enhanced by intuitive operations.

[0398] Also, as shown in FIGS. 24C and 24D, the digital signage 7300 or the digital signage 7400 is preferably capable of wireless communication and cooperation with an information terminal 7311 or an information terminal 7411 such as a smartphone held by the user. For example, the information of the advertisement displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Also, by operating the information terminal 7311 or the information terminal 7411, the display on the display unit 7000 can be switched.

[0399] In addition, it is also possible to execute a game on the digital signage 7300 or the digital signage 7400, using the screen of the information terminal 7311 or the information terminal 7411 as an operation means (controller). As a result, an unspecified number of users can participate in and enjoy the game simultaneously.

[0400] The electronic device shown in FIGS. 25A to 25F includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), connection terminals 9006, a sensor 9007 (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, and the like.

[0401] The electronic device shown in FIGS. 25A to 25F has various functions. For example, it can have a function of displaying various information (such as still images, moving images, text images, etc.) on the display unit, a touch panel function, a function of displaying a calendar, date or time, etc., a function of controlling processing by various software (programs), a wireless communication function, a function of reading and processing programs or data recorded on a recording medium, and the like. Note that the functions of the electronic device are not limited to these, and it can have various functions. The electronic device may have a plurality of display units. In addition, the electronic device may be provided with a camera or the like and have a function of shooting a still image or a moving image and storing it in a recording medium (external or built-in to the camera), a function of displaying the shot image on the display unit, and the like.

[0402] Details of the electronic device shown in FIGS. 25A to 25F will be described below.

[0403] FIG. 25A is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 can be used, for example, as a smartphone. Note that the portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, etc. Further, the portable information terminal 9101 can display characters or image information on its plurality of surfaces. FIG. 25A shows an example in which three icons 9050 are displayed. Also, information 9051 indicated by a dashed rectangle can be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming calls such as e-mail, SNS, and phone calls, titles, sender names, dates, times, remaining battery levels, antenna reception strengths, etc. of e-mail, SNS, etc. Alternatively, an icon 9050 or the like may be displayed at the position where the information 9051 is displayed.

[0404] FIG. 25B is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 has a function of displaying information on three or more surfaces of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are respectively displayed on different surfaces. For example, the user can also check the information 9053 displayed at a position where it can be observed from above the portable information terminal 9102 in a state where the portable information terminal 9102 is stored in the breast pocket of a jacket. The user can check the display without taking the portable information terminal 9102 out of the pocket and can determine, for example, whether to answer a call.

[0405] FIG. 25C is a perspective view showing a wristwatch-type portable information terminal 9200. The display surface of the display unit 9001 is provided to be curved, and display can be performed along the curved display surface. Also, the portable information terminal 9200 can also make a hands-free call by communicating with, for example, a wirelessly communicable headset. Further, the portable information terminal 9200 can also perform data transmission and charging mutually with other information terminals through the connection terminal 9006. Note that the charging operation may be performed by wireless power supply.

[0406] 25D to 25F are perspective views showing a foldable mobile information terminal 9201. FIG. 25D is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 25F is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 25E is a perspective view of the mobile information terminal 9201 in a state in the middle of changing from one of FIG. 25D and FIG. 25F to the other. The mobile information terminal 9201 has excellent portability in a folded state, and has excellent viewability of the display due to a seamless wide display area in an unfolded state. The display unit 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

[0407] This embodiment mode can be combined with other embodiment modes as appropriate. [Explanation of symbols]

[0408] A1-A5: coordinates, B1-B5: coordinates, 10, 20: device, 11: control unit, 12: display unit, 21, 22, 23: detection unit, 50: arrow, 100, 100a-100k: object

Claims

【Claim 1】 a first substrate; a second substrate; a first transistor, a second transistor, a light-emitting element, and a light-receiving element between the first substrate and the second substrate; and the first transistor is electrically connected to the light-emitting element; the second transistor is electrically connected to the light-receiving element, a display device.

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