Methods and systems for infrared sensing

Abstract

To provide infrared (IR) photodetecting systems and methods.SOLUTION: An infrared (IR) photodetecting system operable to detect IR radiation includes at least one photosite and a controllable power source. The at least one photosite has a germanium (Ge) photosensitive area, and a silicon (Si) layer in which multiple readout structures are implemented, each readout structure including a remote doped area and an intermediary doped area. The power source is operable to provide controlled voltages to the Ge photosensitive area and to the remote and intermediary doped areas of each of the multiple readout structures. A method for detecting infrared (IR) radiation includes providing controlled voltages to multiple areas of a photosite (PS).SELECTED DRAWING: Figure 1A

Description

Detailed Description of the Invention

[0001] [Cross - Reference to Related Applications] This application claims priority to U.S. Provisional Patent Application No. 63 / 118,745, filed on November 27, 2020; U.S. Provisional Patent Application No. 63 / 136,429, filed on January 12, 2021; and U.S. Provisional Patent Application No. 63 / 194,977, filed on May 29, 2021.

[0002] [Field] The present disclosure relates to an infrared (IR) focal plane array (FPA) and methods of operating the same. The present disclosure relates in particular to a short wave IR (SWIR) FPA including germanium on silicon.

[0003] [Background] Photodetector devices such as photodetector arrays or "PDAs" (also referred to as "photosensor arrays") include a number of photosites. Each photosite includes one or more photodiodes for detecting impinging light and a capacitance (portion) for accumulating the charge provided by the photodiodes. Hereinafter, the term "photosite" will often be replaced by the acronym "PS". The capacitance (portion) can be implemented as a dedicated capacitor and / or using the parasitic capacitance (portion) of the photodiode, transistor, and / or other components of the PS. Hereinafter, for simplicity of explanation, the term "photodetecting device" will often be replaced by the acronym "PDD", the term "photodetector array" will often be replaced by the acronym "PDA", and the term "photodiode" will often be replaced by the acronym "PD".

[0004] The term "photosite" refers to a single sensor element of an array of multiple sensors (also referred to as "sensel", as a portmanteau of the words "sensor" and "cell", or as a portmanteau of the words "sensor" and "element"), and is also referred to as "sensor element", "photosensor element", "photodetector element", etc. Each PS may include one or more PDs (for example, when a color filter array is implemented, PDs that detect light in various portions of the spectrum may optionally be collectively referred to as a single PS). Also, in addition to the PD, the PS may include some circuitry or additional components.

[0005] Dark current is a well-known phenomenon. With respect to a PD, dark current relates to the current flowing through the PD even when photons are not entering the device. The dark current in a PD can be the result of random generation of electrons and holes within the depletion region of the PD.

[0006] In some cases, it is necessary to provide a PS with a photodiode having the characteristic of relatively high dark current while implementing a capacitor of limited size. In some cases, it is necessary to provide a PS with a PD having the characteristic of relatively high dark current while reducing the influence of the dark current on the output detection signal. For a PS having the characteristic of high dark current accumulation, it is necessary to overcome the harmful effects of the dark current on the electrooptical system, and it would be advantageous if such effects can be overcome. Hereinafter, for simplicity, the word "electrooptical" may be replaced with the acronym "EO".

[0007] Short-wave infrared (SWIR) imaging enables various applications that are difficult to perform using visible light imaging. Such applications include electronic substrate inspection, solar cell inspection, agricultural product inspection, gated imaging, identification and sorting, surveillance, anti-counterfeiting, process quality control, and the like. Many existing InGaAs-based SWIR imaging systems suffer from high manufacturing costs and limited manufacturing capabilities at present.

[0008] Therefore, it would be advantageous to provide a SWIR imaging system using a more cost-effective photoreceiver based on PDs that is more easily incorporated into surrounding electronic devices.

[0009] Photodetector arrays including a plurality of PSs, each of which has sensitivity to a part of the electromagnetic spectrum, are known in the art. However, these PDAs are either expensive, insensitive to ranges of interest in the electromagnetic spectrum, and / or inefficient in distance analysis. Therefore, improvements in PSs and PDAs are needed in the art. Further limitations and disadvantages of conventional, traditional, and proposed approaches will become apparent to those skilled in the art through a comparison of the subject matter of this application, described in the remainder of this application, with such approaches, with reference to the drawings.

[0010] 〔Summary〕 In some aspects, an IR photodetection system operable to detect IR radiation, (a) at least one PS, (i) a germanium (Ge) photosensitive region operable to generate electron-hole (e-h) pairs in response to colliding IR photons, the Ge photosensitive region including an absorber doped region having a first polarity, (ii) A silicon (Si) layer including a diode, wherein the diode includes a first doped region of the first polarity and a second doped region of a second polarity opposite to the first polarity, the Si layer; including at least one PS located between the second doped region and the absorber doped region, wherein the first doped region; (b) At least one power source operable to provide a first region voltage to the first doped region and a second region voltage to the second region; (c) A controllable power source, (i) An activation voltage that forcibly moves charge carriers of the second polarity (CCSP) from the Ge photosensitive region toward the photodiode, wherein the CCSP is collected in the photodiode through a readout electrode electrically connected to the second doped region, and providing the activation voltage to the Ge photosensitive region during a sampling duration of the PS; (ii) Stopping the collection of signals by the PS by providing a rest voltage that attenuates the forced movement (forcing) of the CCSP toward the photodiode to the Ge photosensitive region after the end of the sampling duration; A controllable power source operable to be; An IR light detection system including is disclosed.

[0011] In some embodiments, an electro - optical (EO) detection system, (a) An IR light detection system or an IR light detection sensor including a plurality of PSs; (b) At least one optical interface for directing light from a field of view (FOV) of the electro - optical detection system to the IR light detection sensor; (c) a readout circuit operable to read from each of the plurality of PSs at least one electrical signal corresponding to the number of photons captured by the Ge photosensitive region during the sampling duration of each of the PSs; (d) a processor operable to process detection data provided by the readout circuit indicative of the plurality of electrical signals such that an IR image of the FOV is provided; An electro-optical detection system is disclosed that includes.

[0012] In some aspects, an IR light detection system operable to detect IR radiation, (a) at least one PS, (i) a Ge photosensitive region operable to generate e-h pairs in response to colliding IR photons, the Ge photosensitive region including an absorber doped region having a first polarity; and (ii) a silicon (Si) layer including a first doped region, a storage well, a floating diffusion, and a transfer gate; at least one PS including; (b) at least one controllable power source operable to modulate a voltage to at least one of the first doped region, the Ge photosensitive region, and the floating diffusion; (c) a control device, (i) at one time, by providing voltages to the Ge photosensitive region, the first doped region, and the floating diffusion, forcibly moving charge carriers of the second polarity from the Ge photosensitive region toward the storage well; (ii) at another time, by providing other voltages to the Ge photosensitive region, the first doped region, and the floating diffusion, attenuating the forced movement of charge carriers of the second polarity toward the storage well to stop signal collection by the storage well; and (iii) intermittently transfer the charge carriers of the second polarity from the storage well through the transfer gate to the floating diffusion, where the charge carriers of the second polarity are read in the floating diffusion through a readout electrode electrically connected to the floating diffusion a controllable power supply and a control device operable to control the transfer gate, An IR light detection system including the above is disclosed.

[0013] In some embodiments, an IR light detection system operable to detect IR radiation, (a) at least one PS, (i) a Ge photosensitive region operable to generate e-h pairs in response to colliding IR photons, the Ge photosensitive region including an absorber doped region doped to have a first polarity, (ii) a silicon layer in which a plurality of readout structures are implemented, each readout structure including (1) a remotely doped region doped to have a second polarity, (2) an intermediate doped region disposed between the remotely doped region and the Ge photosensitive region, the intermediate doped region being doped to have a second polarity opposite to the first polarity, a silicon layer including the above, at least one PS including the above, (b) a controllable power supply operable to provide a controlled voltage to the Ge photosensitive region and the remotely doped region and the intermediate doped region of each readout structure of the plurality of readout structures, (i) From the Ge photosensitive region, toward the first readout structure among the plurality of the readout structures, the CCSP is forced to move by a first pulling force so that a relative voltage is maintained on the Ge photosensitive region, on the first remote doping region of the first readout structure, and on the first intermediate doping region of the first readout structure for a first sampling duration. Here, the CCSP is collected in the first readout structure via a first readout electrode electrically connected to the first remote doping region; (ii) On the plurality of doping regions of the first group of the plurality of readout structures including the rest of the plurality of readout structures other than the first readout structure, a voltage is maintained for the first sampling duration such that a pulling force applied to the CCSP toward each of the plurality of remote doping regions of the first group of the plurality of readout structures is less than half of the first pulling force; (iii) From the Ge photosensitive region, toward the second readout structure among the plurality of the readout structures, the CCSP is forced to move by a second pulling force so that a relative voltage is maintained on the Ge photosensitive region, on the second remote doping region of the second readout structure, and on the second intermediate doping region of the second readout structure for a second sampling duration after the first sampling duration. Here, the CCSP is collected in the second readout structure via a second readout electrode electrically connected to the second remote doping region; (iv) On the plurality of doping regions of the second group of the plurality of readout structures including the rest of the plurality of readout structures other than the second readout structure, a voltage is maintained for the second sampling duration such that a pulling force applied to the CCSP toward each of the plurality of remote doping regions of the second group of the plurality of readout structures is less than half of the second pulling force; (v) From the Ge photosensitive region, toward the first readout structure, a relative voltage is maintained on the Ge photosensitive region, the first remote doping region, and the first intermediate doping region for a third sampling duration after the second sampling duration so that the CCSP is forced to move by a third tensile force, where the CCSP is collected in the first readout structure via the first readout electrode; and, (vi) A voltage is maintained on the plurality of doping regions of the first group of the plurality of readout structures for the third sampling duration such that the tensile force applied to the CCSP toward each of the plurality of remote doping regions of the first group of the plurality of readout structures is less than half of the third tensile force A controllable power supply operable to: An IR light detection system including the same is disclosed.

[0014] In some aspects, a method for detecting IR radiation, comprising: (a) Providing a first region voltage to a first doping region of the PS and a second region voltage to a second region of the PS, where the PS includes: (i) A Ge photosensitive region operable to generate e-h pairs in response to impinging IR photons, the Ge photosensitive region including an absorber doping region having a first polarity; and (ii) An Si layer including a diode, the diode including the first doping region of the first polarity and a second doping region of a second polarity opposite the first polarity; The first doping region being located between the second doping region and the absorber doping region; (b) While providing the first region voltage and the second region voltage, an activation voltage that forcibly moves charge carriers of the second polarity from the Ge photosensitive region toward the photodiode, wherein the CCSP provides the activation voltage, which is collected in the photodiode via a readout electrode electrically connected to the second doped region, to the Ge photosensitive region during the sampling duration of the PS; and, (c) A step of stopping the collection of the signal by the PS by providing a rest voltage that attenuates the forced movement of the CCSP toward the photodiode to the Ge photosensitive region after the end of the sampling duration A method including the above is disclosed.

[0015] In some aspects, a method for detecting IR radiation, modulating the voltage applied to at least one region of a PS (PS) is included, wherein at least one of the regions is selected from the group consisting of a first doped region of the PS, a Ge photosensitive region of the PS, and a floating diffusion of the PS, the PS includes at least (a) A Ge photosensitive region operable to generate e-h pairs in response to impinging IR photons, the Ge photosensitive region including an absorber doped region having a first polarity, and (b) A silicon layer including the first doped region, a storage well, the floating diffusion, and a transfer gate, A method including the above is disclosed. The modulating step includes (i) A step of forcibly moving charge carriers of the second polarity from the Ge photosensitive region toward the storage well by providing a voltage to the Ge photosensitive region, the first doped region, and the floating diffusion; (ii) At another time, by providing another voltage to the Ge photosensitive region, the first doped region, and the floating diffusion, the forced movement of the CCSP towards the storage well is attenuated, thereby stopping the signal collection by the storage well; and, (iii) Intermittently, transferring the charge carriers of the second polarity from the storage well to the floating diffusion through the transfer gate, where the charge carriers of the second polarity are read in the floating diffusion through a readout electrode electrically connected to the floating diffusion comprises.

[0016] In some aspects, a method for detecting IR radiation, providing a controlled voltage to a plurality of regions of PS comprises, wherein the PS (i) A Ge photosensitive region operable to generate e-h pairs in response to colliding IR photons, the Ge photosensitive region including an absorber doped region doped to have a first polarity, and (ii) A plurality of doped regions of a plurality of readout structures implemented on the Si layer of the PS, for each of the plurality of readout structures, (a) A remote doped region doped to have a second polarity, and (b) An intermediate doped region disposed between the remote doped region and the Ge photosensitive region, the intermediate doped region being doped to have a second polarity opposite to the first polarity, including a plurality of doped regions of a plurality of readout structures, and including a method is disclosed. The providing step (i) A step of maintaining a relative voltage for a first sampling duration on the Ge photosensitive region, on the first remote doped region of the first readout structure, and on the first intermediate doped region of the first readout structure, such that the charge carriers of the second polarity are forced to move toward the first readout structure among the plurality of readout structures from the Ge photosensitive region by a first tensile force, where the CCSP is collected in the first readout structure through a first readout electrode electrically connected to the first remote doped region; (ii) A step of maintaining a voltage for the first sampling duration on the plurality of doped regions of the first group of the plurality of readout structures, such that the tensile force applied to the charge carriers of the second polarity toward each of the plurality of remote doped regions of the first group of the plurality of readout structures other than the first readout structure is less than half of the first tensile force; (iii) A step of maintaining a relative voltage for a second sampling duration after the first sampling duration on the Ge photosensitive region, on the second remote doped region of the second readout structure, and on the second intermediate doped region of the second readout structure, such that the charge carriers of the second polarity are forced to move toward the second readout structure among the plurality of readout structures from the Ge photosensitive region by a second tensile force, where the CCSP is collected in the second readout structure through a second readout electrode electrically connected to the second remote doped region; (iv) A step of maintaining a voltage for the second sampling duration on the plurality of doped regions of the second group of the plurality of readout structures, such that the tensile force applied to the charge carriers of the second polarity toward each of the plurality of remote doped regions of the second group of the plurality of readout structures other than the second readout structure is less than half of the second tensile force; (v) A step of maintaining a relative voltage on the Ge photosensitive region, on the first remote doping region, and on the first intermediate doping region for a third sampling duration after the second sampling duration, such that charge carriers of the second polarity are forced to move from the Ge photosensitive region toward the first readout structure by a third tensile force, wherein the CCSP is collected in the first readout structure via the first readout electrode; and, (vi) A step of maintaining a voltage for the third sampling duration on the plurality of doping regions of the first group of the plurality of readout structures, such that the tensile force applied to the charge carriers of the second polarity toward each of the plurality of remote doping regions of the first group of the plurality of readout structures is less than half of the third tensile force is included.

[0017] In some embodiments, a method for generating a depth image of a scene based on the detection (results) of a short-wave infrared (SWIR) electrooptical imaging system (SEI system), comprising: Obtaining a plurality of detection signals of the SEI system, wherein each detection signal indicates the amount of light from a specific direction within the field of view (FOV) of the SEI system captured by at least one focal plane array (FPA) detector of the SEI system over respective detection time frames, and at least one of the FPAs includes a plurality of individual photosensors (PSs), each PS including a Ge element in which colliding photons are converted into detected charges, and for each of the plurality of directions within the FOV, the various detection signals indicate reflected SWIR irradiation levels from various distance ranges along that direction; and, Processing the plurality of detection signals such that a 3D detection map including a plurality of 3D positions within the FOV where a plurality of objects are detected is determined. is included. The step of performing the processing includes a step of compensating a dark current (DC) level accumulated during collection of a plurality of the detection signals derived from a plurality of the Ge elements. A method is disclosed in which the compensating step includes a step of applying various degrees of DC compensation to a plurality of detection signals detected by various PSs of at least one of the FPAs.

[0018] In some aspects, a sensor operable to detect depth information of an object, an FPA including a plurality of PSs, each PS being operable to detect light arriving from an instantaneous field of view (IFOV) of the PS, and the various PSs being directed in various directions within a field of view of the sensor; an FPA, a readout set of a plurality of readout circuits, each of which is connected to a readout group of the plurality of PSs of the FPA by a plurality of switches, and when the readout group is connected to each of the readout circuits via at least one of the plurality of switches, operable to output an electrical signal indicating an amount of light colliding with the plurality of PSs of the readout group; a readout set of a plurality of readout circuits, a control device operable to change a plurality of switching states of the plurality of switches such that various readout circuits of the readout set are connected to the readout group at various times to expose the various readout circuits to reflected light from a plurality of objects located at various distances from the sensor; a control device, a processor configured to obtain a plurality of the electrical signals from the readout set indicating detection levels of reflected light collected from the plurality of IFOVs of the readout group of a plurality of photosites to determine depth information regarding the object indicating a distance of the object from the sensor; a processor, is disclosed.

[0019] 〔Brief Description of the Drawings〕 To understand the present disclosure and how it may be actually implemented, several embodiments will be described below by way of non-limiting examples only with reference to the accompanying drawings. The following examples corresponding to various aspects of the subject matter of the present disclosure are provided in the accompanying drawings: Figures 1A and 2A are cross-sectional views showing examples of photosites of an IR light detection system; Figures 1B and 2B are diagrams showing the attenuation of the movement of charge carriers during the rest duration in the systems of Figures 1A and 2A, respectively; Figures 1C and 2C are diagrams showing the movement of charge carriers during the sampling duration in the systems of Figures 1A and 2A, respectively; Figures 3A and 3B are top views showing two examples of photosites; Figure 4 shows the voltage applied to a photosite electrode during successive sampling cycles; Figure 5 shows an IR light detection system; Figure 6 is a block diagram showing an electro-optical system including an IR light detection system; Figure 7 is a flowchart showing an example of a method for sensing light from a field of view; Figure 8 is a cross-sectional view showing a photosite of an IR light detection system; Figure 9 shows the states applied to the voltage modulation on one or more electrodes of a photosite and the states applied to a transfer gate during successive sampling cycles; Figure 10 shows a photosite; Figure 11 shows a photosite; Figure 12A is a top view of a photosite; Figure 12B is a top view of an example of a photosite; Figures 13A, 13B, and 13C show cross-sectional views and top views of a photosite; Figure 13D shows an example of a photosite having four separate readout structures; Figures 14A and 14B show the relative voltages that may be applied during its operation to various regions of a photosite; Figures 14C and 14D show exemplary relationships between voltages applied to various electrodes in various operating states; Figures 15, 16, 17, and 18 show photodetector arrays having N-tap photosites; Figure 19 shows a method for detecting light arriving from the field of view of a photodetector array including a plurality of photosites; Figures 20A and 20B are cross-sectional views showing examples of photosites of an IR light detection system; Figure 21 shows a photosite; Figures 22 and 23 show methods for detecting IR radiation; Figure 24 shows a method for generating a depth image of a scene based on detection of a SWIR electro-optical imaging system; Figure 25 shows the timing of three different detection signals arriving from the same direction within the FOV; Figures 26A-26C show sensors in various operating states; Figure 27 includes various timing diagrams; Figures 28A-28C show sensors in various operating states; Figure 29 shows a sensor; Figure 30 shows the field of view of an electro-optical system and a plurality of instantaneous FOVs; Figures 31A and 31B show various examples of sensors according to embodiments of the subject matter of the present disclosure.

[0020] It will be understood that, for the sake of brevity and clarity, the elements shown in the drawings are not necessarily drawn to scale. For example, the dimensions of some elements may be exaggerated relative to other elements for clarity. Further, reference numerals may be repeated between the drawings to indicate corresponding or similar elements where appropriate.

[0021] 〔Detailed Description〕 In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. It will be understood by those skilled in the art, however, that the present disclosure may be practiced without these specific details. In other instances, well-known methods, procedures, and components have not been described in detail so as not to obscure the present disclosure.

[0022] In the disclosed drawings and description, the same reference numerals indicate components common to different embodiments or configurations.

[0023] Unless otherwise specified, as will be apparent from the following discussion, throughout the specification, discussions using terms such as "processing," "calculating," "computing," "determining," "generating," "setting," "configuring," "selecting," "defining," etc. are understood to include the action and / or processing of a computer that manipulates and / or transforms data into other data, where the data is represented, for example, as physical quantities such as electronic quantities, and / or the data represents physical objects.

[0024] The terms "computer", "processor", and "controller" should be interpreted broadly to include, by way of non-limiting example, personal computers, servers, computing systems, communication devices, processors (e.g., digital signal processors (DSPs), microcontrollers, field programmable gate arrays (FPGAs), application specific integrated circuits (ASICs), etc.), any other electronic computing device, and / or any combination thereof, and any kind of electronic device having data processing capabilities.

[0025] The operations according to the teachings herein may be performed by a computer specially constructed for the desired purpose, or by a general-purpose computer specially configured for the desired purpose by a computer program stored in a computer-readable storage medium.

[0026] As used herein, the phrases "for example", "such", "for instance" and their variants describe non-limiting embodiments of the subject matter disclosed herein. References herein to "one case", "some cases", "other case", or variants thereof mean that a particular configuration, structure, or property (one or more) described in connection with (one or more) embodiments is included in at least one embodiment of the subject matter disclosed herein. Thus, the appearance of the phrases "one case", "some cases", "other case" or their variants does not necessarily refer to the same (one or more) embodiments.

[0027] It is understood that, for clarity, certain features of the subject matter disclosed herein that are described in the context of separate embodiments may be provided in combination in a single embodiment. Conversely, for brevity, various features of the subject matter disclosed herein that are described in the context of a single embodiment may be provided separately or in any suitable sub-combination.

[0028] In embodiments of the subject matter of this disclosure, one or more of the illustrated stages may be performed in a different order and / or one or more groups of the stages may be performed simultaneously. The same is true vice versa. Each figure shows a general schematic diagram of a system architecture according to an embodiment of the subject matter of this disclosure. As defined and described herein, each module in the figures can be constituted by any combination of software, hardware, and / or firmware that performs a function. Each module in the figures may be centrally located in one location or may be distributed in two or more locations.

[0029] Any reference to a method herein should be applied mutatis mutandis (with necessary modifications) to a system capable of performing the method and also to a non-transitory computer-readable medium storing instructions that, when executed by a computer, cause the result of performing the method.

[0030] Any reference to a system herein should be applied mutatis mutandis to a method that can be executed by the system and also to a non-transitory computer-readable medium storing instructions that can be executed by the system.

[0031] Any reference to a non - transitory computer - readable medium in this specification should be construed as being applicable to (i) a system capable of executing instructions stored on the non - transitory computer - readable medium and (ii) a method that can be executed by a computer that reads instructions stored on the non - transitory computer - readable medium.

[0032] To understand the present disclosure and how it can actually be implemented, several embodiments will be described below by way of non - limiting examples with reference to the accompanying drawings. It will be understood that, for the sake of brevity and clarity, the elements shown in the drawings are not necessarily drawn to scale. For example, the dimensions of some elements may be exaggerated relative to other elements for clarity. Further, reference numerals may be repeated between the drawings to indicate corresponding or similar elements where appropriate.

[0033] In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it will be understood by those skilled in the art that the present disclosure may be practiced without these specific details. In other instances, well - known methods, procedures, and components have not been described in detail so as not to obscure the present disclosure.

[0034] In the disclosed drawings and description, the same reference numerals indicate components common to different embodiments or configurations.

[0035] Unless otherwise specified, as is apparent from the following discussion, throughout the specification, in discussions using terms such as "processing", "calculating", "computing", "determining", "generating", "setting", "configuring", "selecting", "defining", etc., it is understood that the computer's function and / or processing includes manipulating data and / or converting the data into other data. And the data is represented as a physical quantity such as electronic quantities, for example, and / or the data is understood to represent a physical object.

[0036] The terms "computer", "processor", and "controller" should be construed broadly to include, as non-limiting examples, personal computers, servers, computing systems, communication devices, processors (e.g., digital signal processors (DSPs), microcontrollers, field programmable gate arrays (FPGAs), application specific integrated circuits (ASICs), etc.), any other electronic computing device, and / or any combination thereof, of any type of electronic device having data processing capabilities.

[0037] The operations according to the teachings herein may be performed by a computer specially created for the desired purpose, or by a general-purpose computer specially configured for the desired purpose by a computer program stored on a computer-readable storage medium.

[0038] As used herein, the phrases "for example," "such as," "for instance," and variations thereof describe non-limiting embodiments of the subject matter disclosed herein. References herein to "one case," "some cases," "other case," or variations thereof mean that a particular configuration, structure, or characteristic described in connection with (one or more) embodiments is included in at least one embodiment of the subject matter disclosed herein. Thus, the appearances of the phrases "one case," "some cases," "other case," or variations thereof do not necessarily refer to the same (one or more) embodiments.

[0039] For clarity, it is understood that specific configurations of the subject matter disclosed herein, which are described in the context of individual embodiments, may be provided in combination in a single embodiment. Conversely, for brevity, the various configurations of the subject matter disclosed herein, which are described in the context of a single embodiment, may be provided individually or in any suitable sub-combination.

[0040] In embodiments of the subject matter of the present disclosure, one or more of the illustrated stages may be performed in a different order and / or one or more groups of the stages may be performed simultaneously. The same is true vice versa. Each figure shows a general schematic diagram of a system architecture according to an embodiment of the subject matter of the present disclosure. As defined and described herein, each module in the figure can be constituted by any combination of software, hardware, and / or firmware that performs a function. Each module in the figure may be centrally located in one location or may be distributed in two or more locations.

[0041] Any reference to a method in this specification should be applied mutatis mutandis (with necessary modifications as appropriate) to a system capable of performing the method and should also be applied mutatis mutandis to a non-transitory computer-readable medium storing instructions that, when executed by a computer, result in the performance of the method.

[0042] Any reference to a system in this specification should be applied mutatis mutandis to a method executable by the system and should also be applied mutatis mutandis to a non-transitory computer-readable medium storing instructions executable by the system.

[0043] Any reference to a non-transitory computer-readable medium in this specification should be applied mutatis mutandis to a system capable of executing instructions stored on the non-transitory computer-readable medium and should also be applied mutatis mutandis to a method executable by a computer that reads instructions stored on the non-transitory computer-readable medium.

[0044] FIG. 1A is a cross-sectional view showing an example of a photosite 6202 of an IR light detection system 6200 according to an embodiment of the subject matter of the present disclosure. The IR light detection system 6200 (hereinafter also referred to as the “IR system 6200” or simply the “system 6200”) is sensitive to photons in the IR region. Although not necessarily so, the IR light detection system 6200 may be an IR light detection sensor or may include an IR light detection sensor. Although not necessarily so, the IR light detection system 6200 may be a SWIR light detection sensor or may include a SWIR light detection sensor. As discussed below, with respect to the claimed light detection sensors, the term “short-wave infrared sensor” and similar terms (e.g., “short-wave infrared FPA sensor”, “short-wave infrared FPA”) are noted to relate to photosensitive sensors capable of absorbing and detecting impinging short-wave infrared radiation (i.e., radiation having a wavelength of 1,000 to 1,700 nm). Also note that such sensors may have sensitivity to other parts of the spectrum (e.g., parts shorter than 1,000 nm) in addition to having sensitivity to a portion of the SWIR spectrum. In particular, such a light detection sensor may optionally have sensitivity to a portion of the visible spectrum (400 to 700 nm), but this is not necessarily so. In at least a portion of the SWIR spectrum, the quantum efficiency of these SWIR sensors is higher than the quantum efficiency achievable by Si-based optical sensors (more suitable for sensing within the visible spectrum). Optionally, the disclosed and claimed SWIR systems may be more specifically sensitive to impinging radiation within a sub-section of the short-wave IR spectrum (1,000 nm to 1,700 nm for the purposes of the present disclosure), and more specifically, to impinging radiation of 1,200 nm to 1,550 nm. For a given wavelength within the context of the present disclosure, a sensor is defined as having sensitivity (sensitive) if the quantum efficiency of the sensor with respect to that wavelength is higher than 5%.

[0045] The IR system 6200 may include one or more photosites (PSs) 6202. For example, the IR system 6200 may include hundreds, thousands, tens of thousands, hundreds of thousands, millions, or more PSs 6202. The detection signal may be processed to generate an image, video, or 3D model of an object within the FOV of the IR system 6200 (or an electro-optical system in which the IR system 6200 is incorporated). For example, the IR system 6200 may include 1280×720 PSs 6202 such that an HD resolution image is generated. In other embodiments, the IR system 6200 may include 640×480 PSs 6202, 1440×900 PSs 6202, or 1920×1080 PSs 6202, or any other arrangement of PSs (standard or non-standard, rectangular tiles, hexagonal tiles (also referred to as "honeycomb tiled"), or any other geometric arrangement of PSs). Any of the plurality of PS arrays discussed throughout this disclosure may be used as an image sensor.

[0046] The PS 6202 includes a Si layer 6210 in which a diode 6230 is implemented. The diode 6230 includes two doped regions, namely, a first doped region 6232 and a second doped region 6234. The first doped region 6232 has a first polarity (positive in the example of FIG. 1A, negative in the example of FIG. 2A), and the second doped region has a second polarity opposite to the first polarity (negative in the example of FIG. 1A, positive in the example of FIG. 2A). Optionally, the Si layer 6210 is a Silicon-On-Insulator (SOI) layer.

[0047] In addition to the Si layer, PS6202 further includes a Ge photosensitive area (or simply "Ge area") 6220. The Ge photosensitive area 6220 is operable to generate e-h pairs in response to colliding IR photons (and, in some cases, also in response to photons in other portions of the electromagnetic spectrum, such as the near IR (NIR) and visible (VIS) portions of the electromagnetic spectrum). The term "Ge area" relates to the bulk of the material in which light-induced excitation of electrons occurs within Ge, within a Ge alloy (e.g., SiGe), or at the boundary between Ge (or a Ge alloy) and another material (e.g., Si, SiGe). Specifically, the term "Ge area" relates to both pure Ge bulk and Ge-Si bulk. When using a Ge bulk that contains both Ge and Si, various concentrations of Ge may be used. For example, the relative portion of Ge in the Ge area (regardless of whether it is alloyed with Si or adjacent to Si) may be from 5% to 99%. For example, the relative portion of Ge in the Ge area may be from 15% to 40%. Note that materials other than Si (such as aluminum, nickel, silicides, or any other suitable material, etc.) may also be part of the Ge area. In some embodiments, the Ge area may be a pure Ge area (including Ge exceeding 99.0%). The Ge area 6220 can be deposited on the Si layer 6210 by any suitable method (such as, but not limited to, epi growth of a uniform layer, selective layer epitaxy method, etc.).

[0048] Within the Ge region 6220, there is at least one doped region 6222 having a first polarity (i.e., the same polarity as the first region 6232; positive in the example of FIG. 1A and negative in the example of FIG. 2A), also referred to as an "absorber doped area". Regarding the doping levels of various parts of the PS6202, the illustrated relative doping ratios are exemplary, and various relative doping levels (e.g., "-", "+", "++") are merely provided as examples, and it should be noted that any suitable combination of relative doping levels and polarities may be used.

[0049] Geometrically, the first doped region 6232 is located between the second doped region and the absorber doped area. This means that, in the context of the present disclosure, most (or all) of the straight line between a point on the Ge region 6220 and a point on the second doped region 6234 (of opposite electrical polarity) passes through at least one point of the first doped region 6232, or passes below at least one point of the first doped region 6232, or passes above at least one point of the first doped region 6232. Thus, controlling the relative voltages in the Ge region 6220, the first doped region 6232, and the second doped region 6234 affects the movement of charge carriers generated in the Ge region 6220 to the respective readout portions of the PS6202, as will be described later. FIGS. 3A and 3B are top views showing two examples of the PS6202 (showing only some of the components for clarity). The voltages applied to the various doped regions are transmitted via three electrodes (or multiple combinations of multiple electrodes). One or more electrodes 6221 provide a voltage to the Ge region 6220 (optionally, in particular, to the doped region 6222 having the Ge region 6220). This voltage is referred to in the figure as the "modulation voltage" and "V Mis referred to as "". One or more electrodes 6233 provide a voltage to the first doped region 6232, and one or more electrodes 6235 provide a voltage to the second doped region 6234. The voltage provided to the positively doped region (out of regions 6232 and 6234) is, in the figure, "Anode voltage" and "V A ", while the voltage provided to the negatively doped region (out of regions 6232 and 6234) is, in the figure, "Cathode voltage" and "V C ". The voltage is provided by one or more power sources. Such a power source may be a constant power source (providing a single constant voltage routinely when on), a modulated power source (e.g., providing a modulated voltage between different voltages, or gradually changing the provided voltage), or any other type of power source. In the illustrated example, only the voltage provided to the Ge region 6220 is modulated, but as will be described later, modulation of other voltages (indicated by V A and V C ) may also be implemented.

[0050] The IR system 6200 includes at least one power source (e.g., power source 6250 and / or a power source connected to electrode 6235) operable to provide a first region voltage to the first doped region 6232 and a second region voltage to the second region 6234. These voltages are used to bias the diode 6230. Optionally, this biasing may be constant over time. However, this is not necessarily the case. In the illustrated embodiment, the biasing is always active (both V A and V C are set to high levels both during the active readout phase of their respective PS6202 and during the idle pause time), but in some embodiments, the biasing voltage is not necessarily always active.

[0051] The IR system 6200 further includes at least one controllable power supply 6240 operable as follows: a. An activation voltage that forces the movement of charge carriers of a second polarity from the Ge region 6222 (where charge carriers are generated as a result of the impinging light) towards the diode 6230, and the CCSP provides the activation voltage to the Ge region 6222 (during the sampling duration of the PS6202) which is collected at the diode 6230 via a readout electrode 6235 electrically coupled to the second doped region 6234. In the examples of FIGS. 1A - 1C, the CCSP is an electron, and in the examples of FIGS. 2A - 2C, the CCSP is a hole. The movement of charge carriers during the sampling duration is illustrated in FIGS. 1C and 2C. In the figures, the connection to the readout circuit is indicated at 6260.

[0052] b. Stop the collection of signals by each PS6202 by providing a rest voltage to the Ge region 6222 after the end of the sampling duration that attenuates (and in some cases completely stops) the forced movement of the CCSP towards the diode 6230. The attenuation of the movement of charge carriers during the rest duration is illustrated in FIGS. 1B and 2B.

[0053] Regarding the activation period, charge carriers of the second polarity are repelled by the voltage applied to the Ge region 6220 and attracted by the voltage applied to the first doped region 6232. These charge carriers utilize the drift velocity resulting from the applied voltage in the depletion region 6280 (specified only in FIGS. 1A and 2A, for example, so as not to reduce the visual load of other diagrams) between the first doped region 6232 and the second doped region 6234 to move through the first doped region 6232 towards the second doped region 6234.

[0054] The IR system 6200 may optionally include a control device 6270 (which may be implemented on the same chip as PS6202 or may be part of the electro - optical system, where the chip is part of a larger electro - optical system). The optional control device may control the provision of a modulated voltage (or voltages) to the associated PS electrodes and may similarly control other parts of the operation of the IR system 6200.

[0055] The sampling cycle of PS6202 includes two phases: (i) a sampling duration during which signals are collected (and then sampled and optionally provided to an external module), and (ii) a rest duration during which signals are not collected. When the application of the activation voltage is stopped, the movement of charge carriers of the second polarity to the read - out electrode 6235 is attenuated. Optionally, the sampling cycle of PS6202 includes only these two phases and no other phases. The movement during the rest duration is attenuated and is not intentionally directed to another useful (effective) position on the PS. In particular, in some or all embodiments, PS6202 does not include other read - out electrodes for collecting signals during the rest period. Optionally, the charge attenuation is due to the short expected lifetime of charge carriers in the Ge region 6220.

[0056] When the first polarity is positive, the voltage combination (V A , V C , V M ) during the sampling duration may satisfy the condition V C ≧V A >V M . The voltage combination when the sampling duration ends (e.g., during an idle duration) satisfies at least the condition V M ≧V A and optionally further satisfies the condition V C ≧V A .

[0057] Inducing charge carriers of the second polarity only partially towards the readout electrodes may be used to selectively collect electrical signals during a relatively short time span (e.g., corresponding to illumination by a light source). This may be useful, for example, to prevent the dark current charge generated in the Ge region 6220 (which may be relatively very high compared to the dark current in a Si photodetector) from saturating the capacitance of the detector. In the IR system 6200, switching between a sampling time and an idle time is implemented at the semiconductor level, as compared to readout circuit electronic switching implemented using transistors or other electrical components. Implementing switching at the semiconductor level is characterized by significantly less noise compared to the noise introduced by switching at the readout circuit level (e.g., thermal noise, also referred to as Johnson - Nyquist noise or kTC noise). Nevertheless, it should be noted that the above - described switching at the semiconductor level may also be combined with other forms of switching and may also be combined with what is implemented in the readout circuit.

[0058] Note that any of the activation voltage and / or the resting voltage may be a single voltage or a range of voltages. Any of the voltage applied to the first doped region 6232 and the voltage applied to the second doped region 6234 may be a single voltage or a range of voltages. For example, the activation voltage may be 1V, 2V, or various voltages within the range of 1 - 2V. Similarly, the resting voltage may be 0.0V, - 0.2V, 0.3V, or various voltages within the range of - 0.2 - 0.3V. Optionally, the amplitude of the resting voltage is at least 0.2V lower than the amplitude of the activation voltage. Optionally, the resting voltage may be zero or close to zero, but this is not necessarily the case.

[0059] Referring to the power supplies that provide voltages to electrode 6221, electrode 6233, and electrode 6235, each of these power supplies (modulated power supply or constant power supply) may provide a voltage to one or more PS6202. The power supplies (e.g., 6240, 6250) may be included within individual PS6202 (as illustrated in FIG. 1A), or may be included externally with respect to individual PS6202 (as illustrated in FIG. 2A). Note that the location of the power supply with respect to individual PS6202 is not related to the polarities of the various doped regions illustrated in a particular figure.

[0060] In the illustrated embodiment, modulation is performed only on electrode 6221 that provides a voltage to Ge region 6220. However, equivalent embodiments that use modulation of the anode voltage and / or modulation of the cathode voltage to create the movement of charge carriers of a second polarity from Ge region 6220 to second doped region 6234 during the activation duration of PS6202 and attenuate that movement during the rest duration of PS6202 will be apparent to those skilled in the art. V A modulation and / or V C modulation of may be implemented together with modulation of V M However, optionally, the voltage with respect to Ge region 6220 may be maintained constant when V A and / or V C is modulated. An example of such an embodiment is provided below with respect to PS6502 in FIG. 13A, with respect to one side of the PS. This can be implemented in PS6202 (or any other PS described below) with modifications as necessary.

[0061] FIG. 4 includes a voltage diagram 40 showing the voltages applied to electrode 6221, electrode 6233, and electrode 6235 during successive sampling cycles, according to an embodiment of the subject matter of the present disclosure. The upper graph relates to an embodiment in which the first polarity is positive (as shown, for example, in FIGS. 1A-1C), and the lower graph relates to an embodiment in which the first polarity is negative (as shown, for example, in FIGS. 2A-2C). The plurality of sampling cycles may be of the same duration, as illustrated, for example, in FIG. 4, but this is not necessarily the case. The sampling durations of the various sampling cycles may be constant, as illustrated, for example, in FIG. 4, but this is not necessarily the case. The rest durations of the various sampling cycles may be constant, as illustrated, for example, in FIG. 4, but this is not necessarily the case.

[0062] The duration of the sampling cycle may optionally be determined with respect to the frame rate of the IR system 6200. For example, in the case of a frame rate of 60 fps, the duration of a plurality of sampling cycles may each be 1 / 60 second. If each frame in the 60 fps example requires multiple exposures, the sampling cycle may be much shorter than this and need not necessarily be of equal length. The sampling cycle may optionally be synchronized with the irradiation (if any) by the associated irradiation source. For example, the IR system 6200 may be combined with at least one irradiation source (e.g., a laser, a light emitting diode (LED)) in a single electro-optical system (e.g., a camera, LIDAR, spectrogram), and the sampling duration may be initiated at the time of light emission by at least one light source. Each sampling duration may be associated with a single irradiation span, may be associated with multiple irradiation spans (e.g., in some pulsed irradiation embodiments), or may be asynchronous with the irradiation (e.g., if there is no irradiation or if constant irradiation is implemented). The sampling durations and / or sampling cycles of the various PS6202 may be synchronized (e.g., start simultaneously), may be cascaded (e.g., the various columns of multiple PSs in a photodetection array may be triggered one after the other), or may be modulated in other ways.

[0063] The sampling duration may be changed in various embodiments of the present disclosure. Optionally, one or more of the sampling durations of at least one of the PS6202 are shorter than 10 nanoseconds. Optionally, one or more of the sampling durations of at least one of the PS6202 are between 10 and 100 nanoseconds. Optionally, one or more of the sampling durations of at least one of the PS6202 are between 100 and 500 nanoseconds. Optionally, one or more of the sampling durations of at least one of the PS6202 are between 0.5 and 5 microseconds. Optionally, one or more of the sampling durations of at least one of the PS6202 are longer than 5 microseconds.

[0064] Although not necessarily so, the Si layer 6210 and the Ge region 6220 may optionally be doped to have a first polarity. This may be used to generate a positive channel (or a negative channel).

[0065] Optionally, the IR light detection system 6200 may include a spectral filter to prevent photons in the visible spectrum from reaching the photodiode. Spectral filters that block other portions of the electromagnetic spectrum (e.g., the far-infrared portion of the spectrum, the ultraviolet portion of the spectrum) may also be implemented. Preventing photons in a selected portion of the spectrum from reaching the diode may be performed to prevent the accumulation of signals caused by these photons (in the Ge region 6220 and / or the Si layer 6210). Optionally, in an electro-optic system in which the IR system 6200 is incorporated, one or more spectral filters may be implemented at the system level. For example, a window, lens, mirror, prism, or other optical component that deflects the light to be sensed by the system may be coated with a spectral filtering coating, or a dedicated spectral filter may be placed on the input optics. The spectral filter, if implemented, may be implemented on the same chip as the chip on which the IR system 6200 is implemented, or on any other part of the electro-optic system (not shown).

[0066] Optionally, the IR light detection system 6200 (or an electrical system incorporating an IR sensing chip) may include a cooling module (e.g., a heat transfer fluid, a heat sink, a cold plate, a Peltier cooling plate) to reduce the heat caused by charge carriers of a first polarity collected via electrodes electrically coupled to the Ge region 6220. Note that the current from these charge carriers of the first polarity may be larger than the detection signal collected by the readout circuit. The intrinsic doping of the Si layer 6210 and / or the Ge region 6220 may be such as to reduce the modulation current of the charge carriers of the first polarity by reducing the movement of the charge carriers of the first polarity. This reduction of the modulation current of the charge carriers of the first polarity (by selecting an appropriate doping level (e.g., a low level of doping)) promotes the reduction of the thermal effect of the modulation current, resulting in a reduction in power consumption and a reduction (or alleviation) of the need for an expensive cooling mechanism.

[0067] Optionally, IR photons from the FOV of the IR light detection system 6200 pass through the Si layer 6210 before being absorbed by the Ge region 6220 (where the IR photons may cause the generation of e-h pairs, depending on the quantum efficiency of the detector).

[0068] Optionally, the IR light detection system 6200 may include a passivation layer 6290 between (a) the Ge region 6220 and diode 6230 on one side and (b) at least one power source (e.g., 6240, 6250) on the other side. Such a passivation layer may be made of SiO2, Si3N4, or any other suitable material. Optionally, the IR light detection system 6200 may include a planarization layer (e.g., between (a) the Ge region 6220 and diode 6230 on one side and (b) at least one power source on the other side). Such a planarization layer may be made of SiO2, Si3N4, or any other suitable material. Note that the optional passivation layer 6290 is shown only in FIGS. 2A - 2C and is not related to any particular polarity of the parts of the IR system 6200.

[0069] Optionally, the Ge region 6220 may be placed (overlayed) on top of the Si layer (either directly or indirectly on top of the Si layer). In other embodiments (not shown), at least a portion of the Ge region is buried within the Si layer (e.g., within an etched hole) and / or within the passivation layer (if any).

[0070] Optionally, the IR light detection system 6200 may include at least one photo - effective layer joined to the polished side of a Si layer disposed on the side opposite to the side where the Si layer on which the Ge region is deployed. A photo - effective layer within the context of this disclosure is a layer that manipulates the irradiation passing through it. For example, the photo - effective layer may function as a chromatic filter, as a polarizing filter, as any other kind of optical filter, as a retarder, as a diffraction grating, or as any other kind of layer that affects the light radiation passing through the layer.

[0071] FIG. 5 shows an IR light detection system 6200 according to an embodiment of the previously disclosed subject matter. In the illustrated example, a plurality of PSs 6202 are arranged in a rectangular matrix, and a power supply provides a voltage to all PSs 6202 simultaneously. To keep the drawing simple and legible, all electrodes to various parts of each PS 6202 are represented by a single line. Optionally, the IR light detection system 6200 may include one or more readout circuits 6810 implemented on the same wafer as one or more of the plurality of PSs 6202 and operable to read from each of the plurality of PSs at least one electrical signal corresponding to the number of photons captured by the Ge region during the sampling duration of each PS. Optionally, the IR light detection system 6200 may include one or more power supplies 6820 that provide a voltage for the operation of the plurality of PSs 6202 (and optionally for additional components of the IR light detection system 6200). The power supply 6820 may provide power based on instructions from a control device 6830, which may also be implemented on the same wafer (but not necessarily). Further, an optional control device 6830 may control the operation of other parts of the IR light detection system 6200, such as a switching module.

[0072] FIG. 6 is a block diagram showing an electro-optical system 6299 including an IR light detection system 6200 according to an embodiment of the subject matter of the present disclosure. FIG. 6 shows some of the components that may be included in such an electro-optical system, but it will be apparent to those skilled in the art that many other components may be implemented in the operational electro-optical system 6299. Examples of electro-optical systems 6299 that may include the system 6200 are IR cameras, lidars, spectrometers, etc.

[0073] Optionally, the electro-optical detection system 6299 may include various additional components, many of which are known in the art. The various additional components may be, for example, any combination of one or more of the following components (but not limited to these): a. Any variant of the IR light detection system 6200 (including a plurality of PSs); b. At least one optical interface 6792 for directing light from the FOV of the electro-optical detection system 6299 onto the IR light detection sensor 6200. Although the optical interface 6792 is illustrated as a single lens, as will be apparent to those skilled in the art, any suitable combination of a plurality of optical components may be used, for example, but not limited to, lenses, mirrors, prisms, optical fibers, filters, beam splitters, retarders, etc. Such optical components may be fixed (in particular, in a controllable manner) or movable. c. At least one readout circuit 6710 operable to read from each of the plurality of PSs at least one electrical signal corresponding to the number of photons captured by the Ge region during the sampling duration of each PS. The readout circuit 6710 can be used, for example, to read the detection signal from the PS6202 and provide the signal for further processing (e.g., for noise reduction, for image processing), for storage, or for any other use. For example, the readout circuit 6710 may serially and temporally organize the readout values of the various PS6202s (optionally, after some processing) before providing them for further processing, storage, or any other action. Optionally, the readout circuit 6710 may be implemented as one or more units fabricated on the same wafer as other components of the IR light detection system 6200 (e.g., the PS6202, the amplifier). Optionally, the readout circuit 6710 may be implemented as one or more units on a printed circuit board (PCB) connected to such a wafer. Also, any other suitable type of readout circuit may be implemented as the readout circuit 6710. Examples of analog signal processing that can be performed in the electro-optical detection system 6299 prior to optional digitization of the signal (e.g., by the readout circuit 6710 or by one or more processors 6720 of each electro-optical detection system 6299) include gain change (amplification), offset, and binning (combining output signals from two or more PSs). The digitization of the readout data may be performed by the electro-optical detection system 6299 or externally thereto. Optionally, the readout circuit 6710 may include (or be composed of) the aforementioned readout circuit 6810, but this is not necessarily the case.

[0074] At least one processor 6720 operable to process detection data provided by a readout circuit 6710 indicating a plurality of electrical signals so as to provide an IR image of the d.FOV. Note that since the readout circuit 6710 is optional, it should be noted that any suitable method of providing information indicating the signal levels of various PSs to the processor 6720 may be utilized. The processing by the processor 6720 may include, for example, signal processing, image processing, spectroscopic analysis, etc. Optionally, the processing result by the processor 6720 may be used to change the operation of the control device 6270 (or another control device). Optionally, the control device 6270 and the processor 6720 may be implemented as a single processing unit. Optionally, the processing result by the processor 6720 may be provided to any one or more of the following components: a tangible memory module 6740 (e.g., for storage or later retrieval; see below), an external system (e.g., a remote server or the vehicle computer of the vehicle in which the system 6299 is installed) via, for example, a communication module 6730, a display 6750 for displaying an image or another type of result (e.g., a graph, a qualitative result of a spectrogram), another type of output interface (e.g., a speaker, not shown), etc. Optionally, it should be noted that signals from a plurality of PSs may be processed by the processor 6720 to evaluate, for example, the state of the IR system 6200 (e.g., operability, temperature).

[0075] e. At least one light source 6780 operable to emit light onto the FOV of the electro-optical system 6299. A portion of the light from the light source 6780 is reflected from an object within the FOV and captured by the plurality of PSs 6202. This light may be used to generate an image or another model of the object (e.g., by the processor 6720). Any suitable type of light source (e.g., pulsed light source, continuous light source, modulated light source, LED light source, laser light source) may be used. Optionally, the operation of the light source 6780 may be controlled by a control device (e.g., the control device 6270).

[0076] f. At least one optical interface 6794 for directing the light from one or more light sources 6780 to a part or all of the FOV of the electro-optical detection system 6299. The optical interface 6794 is illustrated as a single lens, but as will be apparent to those skilled in the art, any suitable combination of a plurality of optical components such as, for example, lenses, mirrors, prisms, optical fibers, filters, beam splitters, retarders, etc. (but not limited thereto) may be used. Such optical components may be fixed (in particular, in a controllable manner) or movable; g. At least one filter 6770 for manipulating the light collected from a part or all of the FOV before it reaches the plurality of PSs 6202. Such a filter may include a physical barrier, a spectral filter, a polarizer, a retarder, or any other suitable type of filter. The filter 6770 may be part of the detector array (e.g., implemented as one or more layers on the same wafer), or may be external to the detector array. The filter 6770, if implemented, may be fixed or changeable (e.g., a movable shutter). Optionally, the operation of the filter 6770, if changeable, may be controlled by a control device (e.g., the control device 6270).

[0077] h. At least one control device 6270 for controlling the operation of one or more arbitrary components of the other components (e.g., photodetectors, light sources, readout circuits) of the electro-optical system 6299, either synchronously or otherwise. Note that it should be noted that any functionality of the control device 6270 can be implemented by an external control device (e.g., it may be implemented on another processor of the electro-optical system 6270 that is not directly connected to the photodetector, or it may be implemented by an auxiliary system such as a control device of an autonomous vehicle in which the electro-optical system 6299 is installed). Optionally, the control device 6270 may be implemented as one or more processors manufactured on the same wafer as the other components of the IR system 6200 (e.g., multiple PSs 6202). Optionally, the control device 6270 may be implemented as one or more processors on a printed circuit board (PCB) connected to such a wafer. Also, other suitable control devices may be implemented as the control device 6270. Optionally, the control device 6270 may include (or may consist of) the aforementioned control device 6830, but this is not necessarily the case.

[0078] i. At least one detection signal among the multiple detection signals output by the multiple PSs and / or readout circuits 6710 (e.g., in different cases), and at least one memory module 6740 for storing the detection information generated by the processor 6720 by processing the multiple detection signals.

[0079] j. At least one power source 6760 (e.g., battery, AC power adapter, DC power adapter). The power source may provide power to the multiple PSs, to the amplifier, or to any other component of the photodetection device.

[0080] k. Hard casing 6798 (or any other type of structural support).

[0081] Optionally, the processor of the electro-optical system 6299 may be further configured to process the detection data such that the presence of at least one object within the FOV is determined.

[0082] FIG. 7 is a flowchart illustrating an example of a method 6300 according to the subject matter of the present disclosure. The method 6300 is a method for sensing light from the FOV. Referring to the embodiments of the accompanying drawings, the method 6300 may optionally be performed by the IR system 6200 or by the electro-optical system 6299.

[0083] Step 6310 includes providing a first voltage combination to (a) a first doped region of the Si layer of the PS, (b) a second doped region of the Si layer of the PS having an opposite doping polarity, and (c) a doped region of the Ge region of the PS connected to the Si layer such that charge carriers can be transferred from the Ge region to the Si layer. By providing the first voltage combination, charge carriers of the same polarity as the second doped region are forced to move from the Ge region towards the second doped region of the Si layer. Here, the CCSP is collected in the second doped region via a readout electrode electrically coupled to the second doped region. Step 6310 includes providing the first voltage combination during the sampling duration of the PS.

[0084] Step 6320 includes providing a second voltage combination to the first doped region of the Si layer, the second doped region of the Si layer of the PS, and the doped region of the Ge region. By providing the second voltage combination, the forcing of the charge carriers described above is attenuated, thereby stopping the collection of the signal by the PS. Step 6320 includes providing the second voltage combination during the rest duration of the PS. Although not necessarily so, the rest duration may start immediately when the sampling duration ends.

[0085] The first voltage combination and the second voltage combination may differ from each other in terms of (a) the voltage (one or more) applied to the first doped region of the Si layer, (b) the voltage (one or more) applied to the second doped region of the Si layer, (c) the voltage (one or more) applied to the Ge region, or (d) any combination of two or more of (a), (b), and (c). At least in the first voltage combination, the photodiode including the first doped region and the second doped region is biased for the collection of charge carriers generated from the absorption of photons.

[0086] Optionally, the diode 6230 is maintained in reverse bias during the sampling duration and, optionally, during the entire continuous operation of the PS6202. V C is V A When it is greater than, the diode 6230 is maintained in reverse bias. Optionally, the diode 6230 is maintained at zero bias (or substantially zero bias) during the sampling duration and, optionally, during the entire continuous operation of the PS6202. Optionally, during the sampling duration and, optionally, during the entire continuous operation of the PS6202, V C ≧V A is.

[0087] Step 6330 of method 6300 includes reading, by a readout circuit electrically connected to the PS, at least the electrical signal collected during the sampling duration to determine a detection signal for the PS during a specific sampling duration. Step 6330 is executed after step 6310 has ended. Step 6330 may be executed during and / or after step 6320. The detection signal may be used, for example, to generate an image by combining the detection signals of a plurality of PSs, each of which faces an instantaneous FOV within the FOV of the system.

[0088] Steps 6310, 6320, and 6330 may be repeated as a group each time various detection signals corresponding to the amount of IR light impinging on the Ge region of the IR light detection system are collected. The sampling duration and the pause duration may be kept the same between any two consecutive instances of the repetition, or one or both of those durations may be changed.

[0089] Steps 6310, 6320, and 6330 may be performed for each of a plurality of PSs of the IR sensor, and method 6300 may include the step of generating an image representing an object in the FOV (or other detection models such as a lidar depth map or spectrogram analysis) in response to the detection signals of the plurality of PSs of various types. The sampling durations of the various PSs may match each other or may be different from each other.

[0090] A method for detecting IR radiation by a PS such as PS6202 is disclosed. This method includes the following plurality of steps: a.Providing a first region voltage to a first doped region of the PS and a second region voltage to a second region of the PS, where the PS (i) is a Ge photosensitive region operable to generate e-h pairs in response to impinging IR photons and includes an absorber doped region having a first polarity, and (ii) is a Si layer including a diode, the diode including a first doped region of a first polarity and a second doped region of a second polarity opposite to the first polarity, and wherein the first doped region is located between the second doped region and the absorber doped region.

[0091] b. An activation voltage that provides the first region voltage and the second region voltage and forcibly moves charge carriers of the second polarity from the Ge region toward the photodiode, wherein the CCSP provides the activation voltage to the Ge region during the sampling duration of the PS, which is collected in the photodiode via a readout electrode electrically coupled to the second doped region.

[0092] c. A step of stopping the collection of signals by the photosite by providing a rest voltage that attenuates the forced movement of the CCSP toward the photodiode to the Ge photosensitive region after the end of the sampling duration. d. Optionally, a step of reading at least the electrical signal collected during the sampling duration by a readout circuit electrically connected to the PS to determine a detection signal for the PS during a specific sampling duration.

[0093] e. Any stage or variation thereof discussed with respect to method 6300.

[0094] FIG. 8 is a cross-sectional view showing an example of the PS6402 of an IR light detection system according to an embodiment of the subject matter of the present disclosure. The PS6402 is similar to the PS6202 but has a different readout mechanism. In the PS6202, the readout is implemented via an electrode connected to the pole of the photodiode (of the second polarity), while in the PS6402, the readout is implemented via a transfer gate 6410 connecting between a storage well 6430 (of the second polarity) and a floating diffusion 6420 (of the second polarity). Charge carriers generated within the Ge region 6492 (particularly, within the doped region 6494 of the Ge region 6492) are selectively aggregated into the storage well 6430 during the active period of the PS based on the voltage difference between the Ge region 6492 and the first doped region 6440. During the collection phase, the transfer gate 6410 may keep the storage well 6430 separated from the floating diffusion 6420 such that all CCSPs arriving from the Ge region 6492 are collected during the sampling time of the PS. At a later time (e.g., during the off-time in the modulation voltage, etc.), the transfer gate 6410 may connect the storage well 6430 and the floating diffusion 6420 such that the charge collected in the storage well 6430 can move to the floating diffusion 6420. The charge is read out from the floating diffusion 6420 by at least one electrode 6460. The storage well 6430 may be a pinned layer (also referred to as a "pinned area") under a pinning layer 6450 (also referred to as a "pinning area") of the opposite polarity (the first polarity). Optionally, a third layer 6470 (also referred to as a "third region 6470") may be pinned (pinned) under the storage well, which has a different doping of the first polarity with respect to the Si layer in which it is present.

[0095] In the illustrated example, the modulation is implemented on the first doped region 6440. The voltages on the Ge region 6492 and the readout electrodes are maintained constant. Note, however, that as long as the relative voltage between the electrodes changes over time, any suitable type of modulation may be used to modulate the voltage on any one or more of these electrodes.

[0096] The "charge storage region" may appear like a pinned photodiode (embedded photodiode), but note that the collected charge arrives from a remote Ge region compared to any part of the charge storage region. A suitable filter may be implemented to cause charge generation in the Si (e.g., something that shields a part of PS6402, a spectral bandpass or high-pass filter that passes SWIR light but not visible or NIR light, etc.).

[0097] FIG. 9 includes a state diagram 50 showing the state (sampling mode vs. idle mode) applied to the voltage modulation on one or more of the electrodes connected to the Ge region and the electrodes connected to the first doped region during successive sampling cycles, and the state (connected, i.e., charge readout, or disconnected) applied to the transfer gate. In the illustrated example, a plurality of irradiation pulses are emitted (at times t1 to t6), and the charge indicating the amount of reflected light of each pulse is accumulated between three successive pulses before being read from the storage well through the floating diffusion. The sampling window may start at the time of pulse emission (e.g., as when the pulses are emitted at t1, t2, and t3), or after a delay period (e.g., as when the pulses are emitted at t4, t5, and t6), or before the pulse emission. Note that some sampling durations may be performed without connection to the pulses (e.g., to measure a dark calibration frame). The sampling cycles may be of the same duration, as illustrated in FIG. 9 for example, but this is not necessarily the case. The plurality of sampling durations of various sampling cycles may be constant, as illustrated in FIG. 9 for example, but this is not necessarily the case. The rest durations of various sampling cycles may be constant, as illustrated in FIG. 9 for example, but this is not necessarily the case. The duration of the sampling cycle may optionally be determined with respect to the frame rate of the IR system of which the PS6402 is a component. For example, in the case of a frame rate of 60 fps, the duration of each of the plurality of sampling cycles may be 1 / 60 second, each containing the charge collected from one or more pulses. If each frame in the 60 fps example requires multiple exposures, the sampling cycles may be much shorter and not necessarily of equal length.The sampling cycle may optionally be synchronized with irradiation by a relevant irradiation source (if any). For example, an IR system may be combined with at least one irradiation source (e.g., a laser, a light-emitting diode (LED)) in a single electro-optical system (e.g., a camera, LIDAR, a spectrograph), and the sampling duration may be started when light is emitted by at least one light source. Each sampling duration may be associated with a single irradiation span, or (e.g., in some pulsed irradiation embodiments) with a plurality of irradiation spans, or (e.g., when there is no irradiation or when constant irradiation is implemented) may be asynchronous with the irradiation. The sampling durations and / or sampling cycles of various PS6402s may be synchronized (e.g., starting simultaneously), cascaded (e.g., various columns of a plurality of PSs in a photodetector array may be triggered one after another), or otherwise modulated. The sampling duration may be changed in various embodiments of the present disclosure. Optionally, one or more of the sampling durations of at least one of the PS6202s are shorter than 10 nanoseconds. Optionally, one or more of the sampling durations of at least one of the PS6202s are between 10 and 100 nanoseconds. Optionally, one or more of the sampling durations of at least one of the PS6202s are between 100 and 500 nanoseconds. Optionally, one or more of the sampling durations of at least one of the PS6202s are between 0.5 and 5 microseconds. Optionally, one or more of the sampling durations of at least one of the PS6402s are longer than 5 microseconds.

[0098] FIG. 10 shows PS6404 according to an embodiment of the subject matter of the present disclosure. All components of PS6402 described above are included in PS6404. PS6404 includes an additional doped region 6480 that is modulated with respect to the Ge region, which may be used to deflect (turn the direction of) charge carriers of the second polarity away from the storage well 6430 during the idle time of the sampling cycle (for example, whenever the doped region 6440 is “off”, the doped region 6480 may be “on” and vice versa. However, other modulations may be implemented). Optionally, note that the additional doped region 6480 is not modulated with respect to the Ge region, but rather has a relatively small constant voltage difference with respect to the Ge region. During the idle time, this low DC offset is sufficient to attract each charge carrier, but is overridden by a higher modulation voltage during the sampling duration. Note that similar additional doped regions with corresponding modulations may also be implemented in PS6402 (optionally illustrated in FIG. 2 and labeled V to represent “removal” of charge). R as shown.

[0099] FIG. 11 shows a photosite 6406 according to an embodiment of the subject matter of the present disclosure. All components of PS6404 described above are included in PS6404. The photosite 6406 includes additional storage, floating diffusion, readout electrodes, and other components for reading out charge carriers of the second polarity when the charge carriers of the second polarity are collected away from the first storage well 6430. Such a configuration may be used, for example, for time-of-flight measurement, in which case the relative amounts of charge collected on each of the two sides may indicate the phase of the returning light and thus the distance to the object reflecting the light. The control device may toggle the readout between two readout complexes (left and right of the Ge region in the figure).

[0100] FIG. 12A is a top view of an example of PS6406 (only a part of the components are shown for clarity). The voltages applied to different doped regions are transmitted through respective electrodes (or combinations of electrodes).

[0101] FIG. 12B is a top view of an example of PS6408 (only a part of the components are shown for clarity). The voltages applied to different doped regions are transmitted through respective electrodes (or combinations of electrodes). All components of PS6406 described above are included in PS6408. PS6408 includes an additional doped region 6790 (further indicated as "OFF time charge removal") that is modulated with respect to the Ge region 6492 and can be used to turn away charge carriers of the second polarity from both storage wells during the idle time of the sampling cycle. For example, charge carriers of the second polarity may be toggled between the first storage well and the second storage well when a light reflection pulse is detected by PS6408, or may be turned towards the third doped region (at the top of the figure) when no reflection pulse is expected or desired. The transfer gate can be turned on simultaneously (e.g., if two readout circuits are used) or consecutively (e.g., if a single readout circuit reads both sides at different times) for readout when charge is directed towards that third doped region.

[0102] Note that any variations, implementations, features, and components described above with respect to PS6202 can be applied to PS6402, PS6404, PS6406, and PS6408 with modifications as necessary. Note that any variations, implementations, configurations, and components described above with respect to IR system 6200 can be implemented for any IR system in which PS6402, PS6404, PS6406, or PS6408 is implemented with modifications as necessary.

[0103] FIGS. 13A, 13B, and 13C show a cross-sectional view (FIG. 13A) and a top view (FIG. 13B) of an example of a photosite 6502 according to an embodiment of the subject matter of the present disclosure. Similar to the PS described above, a group consisting of one or more PS6502s may be incorporated into an IR light detection system operable to detect IR radiation. Such a system is substantially the same as system 6299, but may be modified as necessary to include PS6502 instead of PS6202. Each PS6502 includes a Ge photosensitive region 6520 operable to generate e-h pairs in response to impinging IR photons. The Ge photosensitive region 6520 includes an absorber doped region 6522 doped to have a first polarity (e.g., positively charged). Each PS6502 also includes a Si layer 6510 in which a plurality of readout structures 6570 are implemented. Each readout structure 6570 includes (a) a remotely doped region 6534 doped to have a second polarity, and (b) an intermediate doped region 6532 disposed between each remotely doped region 6534 and the Ge photosensitive region 6520 (optionally, between the absorber doped region 6522 and each remotely doped region 6534). The intermediate doped region 6532 is doped to have a second polarity opposite to the first polarity. The intermediate doped region 6532 of a particular readout structure 6570 is disposed between each remotely doped region 6534 and the Ge photosensitive region 6520 when at least a portion of the intermediate doped region 6532 is disposed on a straight line between a first point on each remotely doped region 6534 and a second point on the Ge photosensitive region 6520. Optionally, for each position L on at least half of the area of the intermediate doped region 6532 (or a larger portion of the intermediate doped region 6532, e.g., >60%, >70%, >80%, >90%, >95%) n with respect to a point A on each remotely doped region 6534 n and a point B on the Ge photosensitive region 6520 n the position L n can be selected such that it is located on a straight line connecting these two points (A n and B n ).

[0104] The operation of the PS6502 is different from that of the PS6202, but each read structure 6570 combined with the GE photosensitive region 6520 can operate in the same manner as the Ge region 6220, the first doped region 6232 (which corresponds to each intermediate doped region 6532 in this embodiment), and the second doped region 6234 (which corresponds to each remote doped region 6534 in this embodiment), (usually only during a portion of the execution time of the PS6502). It should be noted that when operating in the same manner as the PS6502, the flow of charge carriers between the Ge region and each read structure 6570 will behave in the same manner as the sampling phase of the PS6502, (even if there may be a number of differences, such as (equal to the relative voltage of all electrodes while affecting other read structures 6570)). Optionally (e.g., as shown in FIG. 13C), the PS6502 may include a guard ring 6592 (or trenching) that completely, incompletely, or partially surrounds the PS6592 (or a portion thereof). Many uses (applications) and implementation methods are known to those skilled in the art and are not disclosed herein for the sake of brevity.

[0105] An IR system with a PS6502 is further operable to provide a controlled voltage to the Ge photosensitive region 6520 (and in some cases, to a part thereof, such as the absorber doped region 6522, etc.), as well as to the remote doped region 6534 and the intermediate doped region 6532 of various readout structures (e.g., all of them), and includes a controllable power supply (partially represented by the controllable power supply unit 6540). The voltage can be provided to various regions via appropriate electrodes such as the electrode 6535, the electrode 6533, and the electrode 6521 (but not limited to these). Note that some of the regions to which voltage is supplied by the controllable power supply may receive a constant (or substantially constant) voltage, but for some of these regions, a controllable (e.g., modulated) voltage that changes over time is provided. In the embodiment shown in FIG. 13A, the modulated voltage is supplied by the variable power unit 6540 to the intermediate doped regions (6532A and 6532B in the illustrated embodiment), but this is just an example. As shown, the readout of charges from the readout structure 6570 may be performed via the connection 6560 (e.g., via the electrode 6535 to which voltage is applied to the remote doped region 6534 through the electrode 6535). This may be connected, for example, to the readout circuit of an IR electro-optical system in which a plurality of PS6502s are incorporated. During the sampling duration of the readout structure 6570 (see further embodiments below), charge carriers of the second polarity are repelled by the voltage applied to the Ge region 6522 and attracted to the voltage applied to the active intermediate doped region 6532. These charge carriers pass through the active intermediate doped region 6532 and utilize the drift velocity (caused by the voltage applied, for example, in the optional depletion region 6580, which is only illustrated in FIG. 13A) between the intermediate doped region and the remote doped region to move towards the remote doped region 6234 of the active readout structure 6570.

[0106] FIG. 13D shows an example of a PS6502 having four separate readout structures 6570, namely, number 6570A, number 6570B, number 6570C, and number 6570D. As illustrated in FIG. 13D, optionally, the PS6502 may include a plurality of readout modules 6598. Each of them is associated with one or more readout structures 6570 and is operable to apply signal processing to the signals provided by each respective readout structure 6570. Such signal processing may include, for example, amplification, noise removal, and any other suitable signal processing techniques. Alternatively or additionally, the PS6502 may include a plurality of modules that affect signal collection by a particular PS (e.g., at the location of module 6598 in the figure). For example, the PS6502 may include a module that modifies the control voltage supplied to a plurality of PS6502s (e.g., columns of a sensor array) with respect to the requirements of a particular PS6502 (e.g., according to the temperature of a particular PS, according to its characteristic dark noise, etc.). Optionally, the PS6502 may include an internal trench 6596 (or a guard ring) that separates the readout structure 6570 from the readout module 6598 or is electrically separated from the other modules described above.

[0107] Returning to the controllable power supply, note that various voltage schemes can be applied by the controllable power supply to the various electrodes of one or more arbitrary PS6502s such that charge is alternately read by the various readout structures 6570 of such an arbitrary single PS6502 (and thus the detection signals are alternately read). For example, the controllable power supply of the PS6502 may optionally be operable to maintain the following voltage schemes (e.g., by being preconfigured, by the execution time determination of the control device, etc.) to achieve the various purposes discussed below. Note that the reference numbers in the following discussion are provided as non-limiting examples with respect to FIGS. 13B, 13C, and 13D.

[0108] a. During the first sampling duration, 1. From the Ge photosensitive region, so that the charge carriers of the second polarity are forced to move towards the first readout structure among the plurality of readout structures by the first tensile force, relative voltages are maintained (a) on the Ge region, (b) on the first remote doped region of the first readout structure, and (c) on the first intermediate doped region of the first readout structure, where the CCSP is collected in the first readout structure via the first readout electrode electrically coupled to the first remote doped region; and 2. Voltages are maintained on the plurality of doped regions of the first group of the plurality of readout structures such that the tensile force applied to the charge carriers of the second polarity towards each of the plurality of remote doped regions of the first group of the plurality of readout structures (for example, one readout structure in the example of FIG. 13B, three readout structures in the example of FIG. 13D) other than the first readout structure is less than half of the first tensile force.

[0109] b. (After the first sampling duration, but not necessarily immediately thereafter) Over the second sampling duration, 1. From the Ge photosensitive region, so that the charge carriers (CCSP) of the second polarity are forced to move towards the second readout structure among the plurality of readout structures by the second tensile force, relative voltages are maintained on the Ge region, on the second remote doped region of the second readout structure, and on the second intermediate doped region of the second readout structure, where the CCSP is collected in the second readout structure via the second readout electrode electrically coupled to the second remote doped region; and 2. Voltages are maintained on the plurality of doped regions of the second group of the plurality of readout structures such that the tensile force applied to the charge carriers of the second polarity towards each of the plurality of remote doped regions of the second group of the plurality of readout structures including the remainder of the plurality of readout structures other than the second readout structure is less than half of the second tensile force. c. (After the second sampling duration, but not necessarily immediately thereafter) Over the third sampling duration: 1. On the Ge region, the first remote doped region, and the first intermediate doped region, maintain a relative voltage such that charge carriers (CCSP) of the second polarity are forced to move from the Ge photosensitive region towards the first readout structure by a third tensile force, where the CCSP are collected in the first readout structure via the first readout electrode; and 2. Maintain the voltage for the third sampling duration on the plurality of doped regions of the first group of the plurality of readout structures such that the tensile force applied to the charge carriers of the second polarity towards each of the plurality of remote doped regions of the first group of the plurality of readout structures is less than half of the third tensile force.

[0110] The changes between the reading from the first reading structure and the reading from the second reading structure may be continued by the same principle. Note that the disclosed process may be further adapted to the reading of three or more reading structures (for example, in the example of FIG. 13D, four reading structures). An additional reading structure may be read, for example, between step b2 and step c1. During the reading, a similar voltage scheme may be applied to the selected reading structure (for example, with modifications as necessary, similar to step b1) and to each group of the remaining reading structures (for example, with modifications as necessary, similar to step b2). Also, in PS6502 including three or more PSs, a cyclic reading order may be maintained (for example, ABCDABCDABCD), but this is not necessarily the case, and any other arbitrary order for reading from various reading structures 6570 may be implemented (for example, ABCDBDACDABC, ABABCDCDABABCDCD). Further, optionally, a controllable power module may apply an appropriate voltage to simultaneously read two or more reading structures 6570 (for example, 6570A and 6570B) while reducing the tensile force towards one or more of the remaining photosite structures (for example, 6570C and 6570D). The sampling cycles may be of the same duration, but this is not necessarily the case. The sampling durations of the various reading structures may be the same as each other, but this is not necessarily the case.

[0111] Referring to the above-mentioned tensile forces, it is clear that various charge carriers will face various tensile forces towards the doped regions simultaneously (for example, when known voltages are supplied to various parts of PS6502). However, a single charge carrier will face various tensile forces towards the various reading structures 6570, and the relative magnitudes of these forces applied to any given charge carrier can be compared.

[0112] The illustrated PS6502 shows the polarity in which the absorber doped region 6522 is doped to have a positive polarity, but it should be noted that an inverted polarity can also be implemented (i.e., the absorber doped region 6522 is doped to have a negative polarity and the rest of the polarities within the PS6502 are also inverted). Also, although PS6502 and PS6202 are different from each other, those skilled in the art should note that, in order to understand PS6502, its components, and its method of operation, modifications can be made as necessary to implement an extended description of PS6202, its components, and its method of operation.

[0113] As illustrated in the non-limiting example of FIG. 13B, PS6502 may include an optional doped region 6590 that is modulated with respect to the Ge region 6520 and may be used to deflect charge carriers of a second polarity away from the read structure 6570 (e.g., during the idle time of a sampling cycle). For example, charge carriers of the second polarity may be toggled between the read structures 6502 when a reflected pulse of light is detected by the PS6502 and may be deflected towards the doped region 6590 when the reflected pulse is unexpected or not desired. Optionally, a doped region of the opposite polarity (indicated by 6594) may be disposed between the Ge region 6520 and the doped region 6590, and the voltages applied to the doped region 6590 and the doped region 6594 may be applied in the same manner as the readout structure 6570 (e.g., via electrodes not numbered in the figure but connected thereto). That is, the structure 6588 including the regions 6590 and 6594 may optionally be operated in the same manner as the readout structure 6570 (e.g., when charge disposal is required). Here, the doped region 6590 corresponds to the region 6534, and the region 6594 corresponds to the region 6532.

[0114] FIG. 14A shows the relative voltages that can be applied to the various regions of the PS6502 during its operation. V A is the voltage supplied to the Ge region 6520 (or a part thereof) that can function as an anode. V Ais the voltage supplied to the Ge region 6520 (or a part thereof) that can function as an anode. V C is the voltage supplied to the remote doped region 6534 (or a part thereof) of a specific read structure 6570 that can function as a cathode. V M is the voltage supplied to the intermediate doped region 6532 (or a part thereof) that can function as a controllable motion-induced structure. When the read structure is in the active detection mode (for example, corresponding to steps a and c of the first read structure described above), the relationship between the voltage applied to the Ge region 6520 and the voltages applied to the various doped regions of the read structure 6570 can follow the following rules: V C (Active) ≥ V M (Active) > V A (Active). For an inactive read structure, at the same time, the following rules can be applied: V C (Inactive) > V A (Inactive) and V A (Inactive) ≥ V M(Inactive). The rules of FIG. 14A are related to the doping polarities shown in FIGS. 13A - 13D. When the opposite doping polarity is implemented (e.g., when the doped region 6522 is negatively doped), the rules of FIG. 14B can be used. FIG. 14C shows the exemplary relationships between the voltages applied to various electrodes (shown as C1, M1, A, M2, and C2 at the top of the figure) when no reading of PS6502 occurs at all (two examples are given and shown as "OFF" and "OFF strong"), when reading is performed through the left readout structure (shown as "Read out from RO1"), and when reading is performed through the right readout structure (shown as "Read out from RO2"). H represents a high voltage and L represents a low voltage. Note that some differences can be implemented between the various regions assigned the same voltage designation (i.e., "H" or "L"). For example, in the active readout structure, different voltages may be applied to C1 and M1 (e.g., 1.7 volts and 1.8 volts) so that the number of charge carriers of the second polarity detected in the remote doped region increases. When referring to the voltages applied to various regions of PS6502 (and other PSs described herein), note that various levels of voltage can be used in various implementations. Exemplary voltages may be on the order of 1V to 10V, but this is not necessarily the case. For example, the voltages applied to various doped regions on the PS can be within any one or more of the following multiple ranges (where ± represents a positive or negative voltage depending on the implementation): 0V to ±0.25V, ±0.25V to ±0.5V, ±0.5V to ±1V, ±1V to ±1.5V, ±1.5V to ±2.5V, ±2.5V to ±5V, and ±5V to ±10V. Also, other voltages may be applied. As an example, referring to the example of FIG. 14C, the low voltage (shown as "L") can be in the range of 0V to 0.25V, while the high voltage (shown as "H") can be in the range of 1V to 1.5V.In the above description, the voltages applied to the various PSs were described based on the forces applied to the charge carriers in the PSs as a result of the respective voltages. However, the voltage may be defined more directly. For example, the voltage applied to the modulation electrodes of the active readout structure 6570 (e.g., in the example of FIG. 14C, to the intermediate doped region) during the sampling duration (e.g., the first sampling duration, or any other sampling duration) can be more than 10 times greater than any voltage applied to the modulation electrodes (e.g., any intermediate doped region) of the first group of a plurality of readout structures (e.g., in the idle mode) averaged over the respective sampling durations. This relationship between the voltages can be implemented in the PS6502 with modifications as necessary, even if the tensile force applied to the charge carriers is different from that described above.

[0115] PS6502 includes a single Ge region 6520 to which one (or more) associated electrodes 6521 are connected. However, unlike PS6502 that includes only a single anode and a single cathode, PS6502 includes a first doped region 6532 and a second doped region 6534, as well as multiple sets of associated components (e.g., electrodes). Each set of doped regions and associated elements is denoted by the capital letter subscript associated with that set. For example, the first doped region 6532 of set A is denoted as 6532A, and the first doped region 6532 of set B is denoted as 6532B. Note that although only a single combination of multiple polarities is shown in the figure, other combinations of the polarities of the doped regions and charge carriers, particularly those with opposite polarities, can also be implemented. Also note that the polarities of the doped regions of the various readout structures can differ between one readout structure and another within a single PS6502.

[0116] Figures 15, 16, 17, and 18 show a photodetector array 9010 having an N-tap PS9020 according to an embodiment of the subject matter of the present disclosure. FIGS. 15 and 16 show an embodiment of a 2-tap PDA9010, where each photosite has two detection structures 9030 that are alternately activated. FIGS. 17 and 18 show an embodiment of a 4-tap PDA9010, where each photosite has four detection structures 9030 that can be activated in a round-robin fashion or any other arbitrary fashion. It should be noted that the following discussion can be applied to a PDA9010 having a 3-tap PS9020, an 8-tap PS9020, or any other arbitrary N-tap PS where N is a natural number greater than 1. The PS9020 may be, for example, a PS9502, or may be other types of multi-tap photosites discussed in the present disclosure, or may be any other type of N-tap photosite (e.g., an N-tap photosite of only silicon for the visible region of the electromagnetic spectrum).

[0117] Conventional implementations of photodetector arrays with N-tap photosites are implemented in rectangular tiling. Each PS is identical to those in its vicinity, and the various detection / readout structures of different PSs are activated in the same manner across all the PSs of the array (e.g., in the case of a 4-tap PDA, in a synchronized clockwise modulated detection scheme, all the upper-left detection structures of the various PSs are activated simultaneously, followed by simultaneously activating all the upper-right detection structures of the various PSs, followed by simultaneously activating all the lower-right detection structures of the various PSs, and finally simultaneously activating all the lower-left detection structures of the various PSs). FIGS. 15-18 show a PDA9010 having an N-tap PS9020 in which a plurality of readout structures 9030 are activated non-identically. FIG. 18 shows a possible circuit for controlling the PS9020 of a 4-tap PDA9010 by the method 9060 described below.

[0118] FIG. 19 shows a method 9060 for detecting light arriving from the field of view of a PDA including a plurality of PSs, according to an embodiment of the subject matter of the present disclosure. Each PS includes a plurality of readout structures operable to collect charge carriers generated by the PS in response to light impinging on the reflective PS. (For example, as described above with respect to PS9502,) the various readout structures of any single PS are controllable to immediately collect various instantaneous levels of signals in response to light impinging on the PS. Referring to the embodiments described with respect to the previous drawings, the PS may be PS9502 or any type of N-tap Si PS (not including Ge).

[0119] The following discussion pertains to adjacent photosites. Each photosite includes at least a first readout structure (e.g., 9030A) and a second readout structure (e.g., 9030B). The first readout structures of adjacent photosites are adjacent to each other, and the second readout structures of adjacent photosites are spaced apart from each other. For example, the distance between the second readout structures of adjacent PSs may be at least three times greater than the distance between the first readout structures of adjacent PSs. For example, the distance between the second readout structures of adjacent PSs may be greater by at least one (or at least two) of the widths of the readout structures than the distance between the first readout structures of adjacent PSs. For example, the distance between the second readout structures of adjacent PSs may be greater than the width of the PSs of the PDA.

[0120] Step 9062 includes a step of controlling the collection method of adjacent PSs such that the first readout structures of adjacent PSs are simultaneously activated (i.e., set to the detection mode) (e.g., by applying appropriate voltages to various regions of the PSs, including various portions of the various readout structures). Optionally, step 9062 may also include a step of controlling the collection method of adjacent PSs such that the second readout structures of adjacent photosites are set to idle simultaneously with the activation of the first readout structures (e.g., applying a reduced force to pull the charge carriers of the detected polarity towards the second readout structures, or applying a repelling force such that such charge carriers move away from the second readout structures).

[0121] Step 9064, which is executed after step 9062, includes a step of controlling the collection method of adjacent photosites such that the second readout structures of adjacent photosites are simultaneously activated (i.e., set to the detection mode) (e.g., by applying appropriate voltages to various regions of the photosites, including various portions of the various readout structures). Optionally, step 9062 may also include a step of controlling the collection method of adjacent photosites such that the first readout structures of adjacent photosites are set to idle simultaneously with the activation of the second readout structures (e.g., applying a reduced force to pull the charge carriers of the detected polarity towards the first readout structures, or applying a repulsive force such that such charge carriers move away from the first readout structures).

[0122] Optionally, steps 9062 and 9064 may be repeated to collect additional signals. Optionally, steps 9062 and / or 9064 also include a step of controlling the collection method of adjacent photosites such that one or more readout structures (e.g., the third readout structure, the fourth readout structure such as 9030C, 9040D, etc.) of each photosite of the adjacent photosites are set to idle simultaneously with the activation of the respective first readout structure or second readout structure. Note that for photosites including three or more readout structures, additional steps similar to 9062 and 9064 may be included for the additional readout structures with modifications as necessary. As described above, when a photosite having three or more readout structures is implemented and one or more readout structures are activated two or more times in the detection of the photosite (e.g., in a single frame of a PDA), any order may be implemented in a round-robin or other method (e.g., ABCDABCDABCD, ABCDBDACDABC, ABABCDCDABABCDCD). If various photosites include a structure (e.g., the structure 6588 described above) for discarding charge carriers without reading them and without their reaching other readout structures, additional optional steps similar to 9062 and 9064 may be included with modifications as necessary to drive the relevant charge carriers toward this structure.

[0123] After step 9062 is executed at least once (1 ≤ T1 times), and after step 9062 is executed at least once (1 ≤ T2 times), in method 9060, optionally, step 9066 of determining a detection signal for each of the first readout structures corresponding to the signals collected by each of the first readout structures during each of the T1 (times) instances (cases) may be continued, and step 9068 of determining a detection signal for each of the second readout structures corresponding to the signals collected by each of the second readout structures during each of the T2 instances may be continued. The determined detection signals may be combined (e.g., aggregated) for each detection frame of the PDA, for example.

[0124] Optionally, in method 9060, at least one of optional steps 9070, 9072, and 9074 may be continued.

[0125] Step 9070 includes generating an image of at least a portion of the FOV of the PDA based on the detection signals determined for each of the readout structures. Here, the number of detection signals for each photosite is less than the number of readout structures of the photosite (e.g., based on data collected by 2, 3, 4 or more readout structures of the photosite, a single detection value is determined for each photosite). Optionally, step 9070 may include determining one or more detection signals for a group of multiple photosites. Here, the total number of detection signals determined for a group of multiple photosites is less than the number of readout (RO structure, ROS) structures at each photosite. For example, for a group of 4 N-tap photosites, R, G, and B color signals are determined.

[0126] Optional step 9072 includes determining the distance to an object within the FOV based on a comparison between a first detection signal of a first readout structure of a photosite and a second detection signal of a second readout structure of the same photosite. Each of the first detection signal and the second detection signal is determined based on a plurality of measurement results executed during a plurality of instances of step 9062 or step 9064, respectively. For example, step 9072 may be performed by implementing a current assisted photonic demodulator (CAPD) technique. Many of these techniques are known in the art.

[0127] Optional step 9074 includes determining the distance to an object in the FOV based on the first detection signal of the first readout structure of the photosite, the second detection signal of the second readout structure of the same photosite, and optionally, further detection signals (if any) of further readout structures of the same photosite. Each detection signal is based on a single instance (i.e., T1 = 1, T2 = 1, etc.), and each detection signal is measured sequentially (optionally, with some overlap) after the emission of the illumination pulse. The magnitudes of the various detection signals and their temporal relationships to the timing of the pulse emission indicate the distance to the object. An example is provided below.

[0128] Note that the simultaneous activation of the adjacent readout structures of adjacent photosites 9020 reduces crosstalk between adjacent photosites and can be used to reduce the amount of tensile force applied by the active readout structures of adjacent photosites in a direction opposite to (or other inappropriate direction than) the direction of the active readout structure of the photosite in question. Also note that although the second readout structures of method 9060 are described as being separated from each other, these photosites may be adjacent to other second readout structures of other adjacent photosites, as illustrated, for example, in FIGS. 15 and 17.

[0129] FIG. 20A and FIG. 20B are cross-sectional views showing examples of photosites 7502 and 7504 of an IR light detection system according to an embodiment of the subject matter of the present disclosure. Photosite 7502 and photosite 7504 may be combined in any suitable IR light detection system described above, and may also be combined in any other type of IR light detection system that requires one or more photosites (e.g., camera, LIDAR, spectrograph). Both photosite 7502 and photosite 7504 include a Ge region 7510 on top of an Si layer 7520 that includes a pinned layer 7522 (negatively doped layer in the figure) and a pinning layer 7524 (positively doped layer in the figure). Both the pinned layer 7522 and the pinning layer 7524 are partially present under the Ge region 7510.

[0130] The pinned layer 7522, and optionally the pinned layer 7524 as well, are connected to the floating diffusion 7540 via the transfer gate 7530. Charge carriers generated in the Ge region 7510 (particularly, in the doped region 7512 of the Ge region 7510) are collected in the pinned layer 7522 (also referred to as a storage well). During the collection phase, the transfer gate 7530 may keep the storage well 7522 separated from the floating diffusion 7540 so that all charge carriers arriving from the Ge region 7510 are collected during the sampling time of their respective photosites. At a later time (e.g., during the off time of their respective photosites, etc.), the transfer gate 7530 may connect the storage well 7522 and the floating diffusion 7540 so that the charge collected in the storage well 7522 moves to the floating diffusion 7540. From the floating diffusion 7540, the charge is read out by at least one electrode. An optional third doped layer 7526 (similar to layer 6470 considering the fine differences) is illustrated in FIG. 20B. Note that the inverted doped region 7542 may be disposed adjacent to the floating diffusion 7540, for example, as illustrated in FIG. 20B. Similar inverted doped regions may be implemented adjacent to any one or more of the above-described floating diffusions 7540. The charge can be read from the floating diffusion via a suitable readout electrode 7550 connected to the floating diffusion 7540.

[0131] Also, FIG. 20B shows another option including the doped region 7512 for the Ge region 7510. Optionally, the Ge region 7510 may include a doped region on any side of the Ge region 7510 (e.g., top, side, edge, etc.), and the doped region may optionally cover the entire exposed surface of the Ge region 7510 (i.e., above the Si layer), or a part thereof. Note that a similar implementation of the doped region within the Ge region may be implemented with modifications as needed in any of the above-described photosites of the photosite.

[0132] FIG. 21 shows a photosite 7506 according to an embodiment of the subject matter of the present disclosure. All the components of the photosites 7502, 7504 described above are included within the photosite 7506. The photosite 7506 includes additional floating diffusions 7540, readout electrodes 7550, and other components for reading out when charge carriers of the second polarity are aggregated to move away from the storage well 7522. Such a configuration may be used, for example, for time-of-flight measurement. In that case, the relative amounts of charge collected on each of the two sides may indicate the phase of the return light and thus may indicate the distance to the object reflecting the light. An example of a technique that can be used to determine the distance based on the charge collected from the various floating diffusions of a single photosite connected to a single Ge region is the CAPD technique described above. Other examples are provided below. A control device (not shown) may toggle the readout between two readout complexes (also referred to as "readout structures", which are located to the left and right of the Ge region 7510 in the figure). In FIG. 21, the photosite 7506 is shown as having two floating diffusions 7540, each connected to the storage well 7522 via its respective transfer gate 7530. However, it should be noted that the photosite 7506 can be implemented using three or more floating diffusions 7540, each connected to the storage well 7522 via its respective transfer gate 7530. For example, three or four floating diffusions may be implemented in a triangular or rectangular photosite 7506, respectively.

[0133] Regarding photosite 6402, photosite 6404, photosite 6406, photosite 6408, photosite 7502, photosite 7504, and photosite 7506 (and all other photosites described above), it should be noted that the same photosite can be implemented to have a polarity inverted from that illustrated in the figures. That is, the regions / portions shown to have a negative polarity can be implemented to be positively doped, and the regions / portions shown to have a positive doping can be implemented to be negatively doped. Also, note that the doping levels of the various regions (e.g., -, +, ++) can vary in various embodiments.

[0134] FIG. 22 shows a method 7600 for detecting IR radiation according to an embodiment of the subject matter of the present disclosure. Referring to the embodiments of the accompanying drawings, method 7600 may optionally be performed by any one of photosite 7502, photosite 7504, and photosite 7506, with modifications as necessary.

[0135] Step 7610 of method 7600 includes modulating a voltage applied to at least one region of the photosite (PS) selected from the group consisting of a first doped region of the photosite, a Ge photosensitive region of the PS, and a floating diffusion of the PS. Here, the photosite includes at least (a) a Ge photosensitive region operable to generate e-h pairs in response to impinging IR photons, the Ge photosensitive region including an absorber doped region having a first polarity, and (b) a Si layer including the first doped region, a storage well, a floating diffusion, and a transfer gate. The modulating step according to step 7610 includes at least the following steps.

[0136] Step 7620 related to the step of forcing charge carriers of a second polarity to move from the Ge region towards the storage well by providing a voltage to the Ge photosensitive region, the first doped region, and the floating diffusion.

[0137] Step 7630 includes a step of stopping signal collection by the storage well by reducing the forced movement of the CCSP towards the storage well by providing another voltage to the Ge photosensitive region, the first doped region, and the floating diffusion at another time.

[0138] Step 7640 relates to a step of intermittently transmitting charge carriers of a second polarity from the storage well to the floating diffusion via a transfer gate. Here, the charge carriers of the second polarity are read in the floating diffusion via a readout electrode electrically coupled to the floating diffusion.

[0139] Optionally, method 7600 may further include a step of reading an electrical signal collected in the floating diffusion by a readout circuit electrically connected to the photosite to determine a detection signal for the photosite during a specific sampling duration.

[0140] The various steps of method 7600 may be performed for each of a plurality of photosites of the IR sensor, and method 7600 may include a step of generating an image representing an object in the FOV (or other detection models such as a depth map of a lidar or spectrogram analysis) in response to the detection signals of the various photosites. The sampling durations of the various photosites may be the same as each other or different from each other.

[0141] Any deformation discussed with respect to photosite 7502, photosite 7504, and photosite 7506 (and equivalent components of any other photosites described above) may be modified as needed and implemented in the execution of method 7600.

[0142] When method 7600 is executed for a photosite that includes two or more floating diffusions, each of the two or more floating diffusions being connected to a Ge region by a respective plurality of transfer gates (as described above with respect to photosite 7506, for example), steps 7620, 7630, and 7640 may be executed separately (e.g., alternately, in a round-robin fashion, or in any other desired order) for each of the floating diffusions. Although not necessarily so, after execution of the first instances of steps 7620 and 7630, a first instance of step 7640 may be executed to transfer charge carriers of a second polarity from a storage well, through a first transfer gate, to a first floating diffusion (in the first floating diffusion, charge carriers of the second polarity are read through a first readout electrode electrically connected to the first floating diffusion). Following the first instance of step 7640, second instances of steps 7620 and 7630 may be executed, and then a second instance of step 7640 may be continued, in which charge carriers of a second polarity are transferred from the storage well, through a second transfer gate, to a second floating diffusion (in the second floating diffusion, charge carriers of the second polarity are read through a second readout electrode electrically connected to the second floating diffusion). Optionally, subsequent instances of steps 7620, 7630, 7640 may be executed to transfer charge carriers of a second polarity to additional floating diffusions for the first time (the first time) and / or to transfer charge carriers of a second polarity to floating diffusions for additional times (additional times).

[0143] Optionally, method 7600 may further include reading, by a readout circuit electrically connected to the photosite, an electrical signal collected in the floating diffusion to determine a detection signal for the photosite during a particular sampling duration. The detection signal may be used, for example, to determine a brightness value for a pixel in an image of the FOV. If a photosite having multiple floating diffusions is used, the electrical signal may be read from each of the multiple floating diffusions via appropriate electrodes. These signals may be used, for example, to determine the distance to an object within the FOV.

[0144] FIG. 23 shows a method 7700 for detecting IR radiation, according to an embodiment of the subject matter of the present disclosure. Referring to the embodiment of the accompanying drawings, method 7700 may optionally be performed by photosite 6502.

[0145] Method 7700 includes providing a controlled voltage to a plurality of regions of the photosite, the photosite comprising at least a. a Ge photosensitive region operable to generate e-h pairs in response to impinging IR photons, the Ge photosensitive region including an absorber doped region doped to have a first polarity, and b. a plurality of doped regions of a plurality of readout structures implemented on the Si layer of the photosite, for each of the plurality of readout structures, (i) a remote doped region doped to have a second polarity, and (ii) an intermediate doped region disposed between the remote doped region and the Ge photosensitive region, the intermediate doped region being doped to have a second polarity opposite to the first polarity, a plurality of doped regions of a plurality of readout structures. including.

[0146] The step of providing a controlled voltage is used at various times for various ends and includes at least steps 7710, 7720, 7730, 7740, 7750, and 7760.

[0147] In step 7710, on the Ge region, on the first remote doped region of the first readout structure, and on the first intermediate doped region of the first readout structure, a relative voltage is maintained for a first sampling duration so that charge carriers of a second polarity are forced to move by a first tensile force from the Ge photosensitive region toward the first readout structure among the plurality of readout structures. Here, the CCSP is collected in the first readout structure via a first readout electrode electrically connected to the first remote doped region.

[0148] In step 7720, on the plurality of doped regions of the first group of the plurality of readout structures, a voltage is maintained for a first sampling duration so that the tensile force applied to the charge carriers of the second polarity toward each of the plurality of remote doped regions of the first group of the plurality of readout structures including the rest of the plurality of readout structures other than the first readout structure is less than half of the first tensile force.

[0149] In step 7730, on the Ge region, on the second remote doped region of the second readout structure, and on the second intermediate doped region of the second readout structure, a relative voltage is maintained for a second sampling duration after the first sampling duration so that charge carriers of a second polarity are forced to move by a second tensile force from the Ge photosensitive region toward the second readout structure among the plurality of readout structures. Here, the CCSP is collected in the second readout structure via a second readout electrode electrically connected to the second remote doped region; In step 7740, on the plurality of doped regions of the second group of the plurality of readout structures, a voltage is maintained for a second sampling duration so that the tensile force applied to the charge carriers of the second polarity toward each of the plurality of remote doped regions of the second group of the plurality of readout structures including the rest of the plurality of readout structures other than the second readout structure is less than half of the second tensile force.

[0150] Step 7750 includes maintaining a relative voltage on the Ge region, on the first remote doped region, and on the first intermediate doped region for a third sampling duration after a second sampling duration, such that charge carriers of a second polarity are forced to move from the Ge photosensitive region toward the first readout structure by a third tensile force. Here, the charge carriers of the second polarity are collected in the first readout structure via the first readout electrode.

[0151] Step 7760 includes maintaining a voltage for a third sampling duration on the doped regions of the first group of the plurality of readout structures such that the tensile force applied to the charge carriers of the second polarity toward each of the remote doped regions of the first group of the plurality of readout structures is less than half of the third tensile force.

[0152] Optionally, the first voltage applied to the first intermediate doped region during the first sampling duration is at least 10 times any voltage applied to any intermediate doped region of the first group of the plurality of readout structures averaged over the first duration.

[0153] Optionally, method 7700 may be performed simultaneously for a plurality of photosites.

[0154] Optionally, method 7700 may further include providing a voltage to the plurality of regions of the photosite during a discarding-duration such that the charge carriers are driven toward the electrode through which the charge carriers of the second polarity are disposed from the photosite without being read.

[0155] As described above, various techniques may be used to determine depth based on the output of one or more photosites. In the following discussion, systems and methods that may be used to determine the distance of a plurality of objects in the FOV of a SWIR electro-optical system, as well as other electro-optical systems having sensitivity to other portions of the electromagnetic spectrum, are discussed.

[0156] Figure 24 shows a method 5500 for generating a depth image of a scene based on detection of a short-wave infrared (SWIR) electro-optical imaging system (SEI system) according to an embodiment of the subject matter of the present disclosure. The SEI system may be any of the systems described above, or any other suitable SWIR electro-optical system (e.g., a sensor, a camera, a lidar, etc.). The method 5500 may be performed by one or more processors of the SEI system, by one or more processors external to the SEI system, or by a combination of both.

[0157] Step 5510 includes obtaining a plurality of detection signals of the SEI system. Each detection signal represents the amount of light from a particular direction within the FOV of the SEI system captured by at least one FPA detector of the SEI system over respective detection time frames (i.e., the detection time frames during which the respective detection signals are captured. For example, it is measured from the triggering of illumination by a relevant light source such as a laser). The at least one FPA includes a plurality of individual photosites, and each photosite includes the Ge element in which colliding photons are converted into detected charge in the Ge element. Note that even when other elements instead of Ge are included, it should be noted that the method 5500 can be implemented for any type of photosite having the characteristic of high dark current.

[0158] For each of the plurality of directions within the FOV, various detection signals (among the aforementioned plurality of detection signals) indicate the level of reflected SWIR irradiation from various distance ranges along that direction. An example is provided in diagram 5710 of FIG. 25. This shows the timing of three different detection signals arriving from the same direction within the FOV. The y-axis (ordinate) in the diagram indicates the level of response of the detection system to reflected photons arriving from the relevant direction. The reflected irradiation originates from one or more light sources (e.g., lasers, LEDs) that are optionally controlled by the same processor that controls the FPA, and they are reflected from a portion of the FOV (e.g., corresponding to the spatial volume detectable by a single photosite). Note that it should be noted that the various detection signals can be associated with similar but not completely overlapping portions of the FOV (e.g., if the sensor, scene, or intermediate optical system is moving temporally between the two, detection signals from the same photosite can be reflected from somewhat different angles within the FOV in different detection time windows associated with different detection signals).

[0159] Refer to the example of FIG. 25. Note that diagram 5710 does not show the detection level of each signal, but rather shows the response of the detection signal to photons reflected from a perfect reflector at various times since the start of light emission. Diagram 5720 shows three objects placed at different distances from the SEI system. Note that in many cases, in each direction, only one object, which is the object closest to the SEI system, is detected at each time. However, in some scenarios, two or more objects can be detected (e.g., when the foreground object is partially transparent or does not block the light from the entire photosite). Diagram 5730 shows the levels of three return signals in the direction in which one of the multiple objects is present (e.g., a person in the near field, a dog in the middle distance, and a tree in the far field) (the selection of the object is arbitrary, and only the light reflected from a portion of each object is usually detected by a single photosite). The light returning from the object at distance D1 is represented by a human figure for three different detection signals (corresponding to different detection timing windows and different ranges from the SEI system). Similarly, the levels of the detection signals corresponding to the light reflected from the object at distance D2 and the object at distance D3 are represented by a dog and a tree symbol, respectively. As shown in diagram 5740, the reflection from an object placed at a given distance can be converted into a tuple (or any other representation of data, e.g., a direction-associated data-structure (DADS) in any suitable form) that shows the relative levels of the detection signals in different time windows. In the illustrated example, each number in the tuple represents the signal level detected in one detection window. The display of the detection levels in the tuple can be corrected with respect to the distance from the sensor (since the reflected light from the same object attenuates with distance), but this is not necessarily the case. In the illustrated example, three partially overlapping time windows are used, but any number of time windows can be used. The number of time windows may be the same for various regions of the FOV, but this is not necessarily the case.

[0160] Stage 5520 includes a process of processing a plurality of detection signals such that a three-dimensional (3D) detection map including a plurality of 3D positions within the FOV where a plurality of objects are detected is determined. The process of processing includes a process of compensating for the dark current (DC) level accumulated during the collection of the plurality of detection signals derived from the plurality of Ge elements. Further, the process of compensating includes a process of applying various degrees of dark current compensation to the plurality of detection signals detected by various photosites of at least one focal place array. Referring to the embodiments of the accompanying drawings, the various detection signals can be obtained at various times by the various readout structures of any of the above-described suitable photosites. Alternatively, the detection signals can be obtained by a group of interconnected photosites, as discussed in more detail below. Also, other embodiments may be used.

[0161] In addition to, or instead of, the process of compensating for the accumulated dark current, the process of processing may include a process of compensating for a high integration noise level and / or readout noise level during the readout of the plurality of detection signals. The process of compensating may include a process of applying various degrees of noise level compensation to the plurality of detection signals detected by different photosites of at least one focal place array.

[0162] Compensation for dark current collection, readout noise compensation, and / or integration noise compensation may be performed in any suitable manner, for example, by using any combination of one or more of software, hardware, and firmware. In particular, compensation for dark current collection may be implemented using any combination of any one or more of the systems, methods, and computer program products described above, or any portion thereof. To apply multiple levels of dark current compensation to multiple detection signals detected by various photosites of at least one focal plane array, and some non-limiting examples of systems, methods, and computer program products that may be used to compensate for dark current are described above with respect to FIGS. 12A-35.

[0163] In some embodiments, the compensating step may be performed during obtaining the plurality of detection signals (e.g., at the hardware level of the sensor), and the processing step may be performed on detection signals that already compensate for dark current accumulation (as discussed, for example, in the patent application published by TriEye LTD of Tel Aviv, the applicant of this application).

[0164] Regarding the compensating step within stage 5520, optionally, the compensating step may include subtracting a first dark current compensation offset from a first detection signal detected by a first photosite corresponding to a first detection range, and subtracting a second dark current compensation offset different from the first dark current compensation offset from a second detection signal detected by the first photosite corresponding to a second detection range that is farther from the SEI system than the first detection range.

[0165] Optionally, method 5500 may include the step of coordinating active illumination (e.g., by at least one light source of the SEI system) with the acquisition of a plurality of detection signals. Optionally, method 5500 includes: (a) triggering the emission of a first illumination (e.g., a laser, an LED) in coordination with the start of the exposure of a first gated image in which a plurality of first detection signals are detected for various directions among a plurality of directions; (b) triggering the emission of a second illumination (e.g., a laser, an LED) in coordination with the start of the exposure of a second gated image in which a plurality of second detection signals are detected for the various directions; and (c) triggering the emission of a third illumination (e.g., a laser, an LED) in coordination with the start of the exposure of a third gated image in which a plurality of third detection signals are detected for the various directions. In such a case, the step of processing according to stage 5520 optionally includes determining the presence of a first object at a first 3D position within a first direction among the various directions based on at least one detection signal from each of the first image, the second image, and the third image, and determining the presence of a second object at a second 3D position within a second direction among the various directions based on at least one detection signal from each of the first image, the second image, and the third image. Here, the distance of the first object from the SEI system is at least twice the distance of the second object from the SEI system.

[0166] Optionally, the step of applying various degrees of DC compensation to a plurality of detection signals detected by various photosites of at least one FPA may include using the detected dark current levels of various reference photosites shielded from the light arriving from the FOV.

[0167] Optionally, the step of compensating may include applying various degrees of DC compensation to a plurality of detection signals simultaneously detected by various photosites of at least one FPA.

[0168] Regarding integrated noise and readout noise, it should be noted that compensation for such noise can be correlated with the number of irradiation pulses used to irradiate multiple portions of the FOV during acquisition of each detection signal by at least one processor executing method 5500. A significant non-linearity of the detected signals can be brought about by various numbers of irradiation pulses. This is optionally corrected as part of the processing before determining the distance / 3D position of various objects within the FOV.

[0169] Regarding the use of DADS to determine the distance / 3D position of various objects within the FOV, for example, to compensate for non-uniformities in detection channels across the FOV (e.g., of sensors and / or detected objects), non-uniformities in irradiation (e.g., non-uniformity of light sources or optical systems using multiple light sources), etc., various conversion functions of DADS with respect to distance (e.g., tuples) can be used for various directions within the FOV.

[0170] As described above, various detection signals from the same direction within the FOV correspond to different detection windows. These can be for objects at the same distance or at different distances. For example, the detection window may correspond to a distance range of about 50m (e.g., between 80m from the SEI system and 130m from the SEI system). In various examples, some or all of the detection windows used to determine the distance / 3D position of an object within the FOV can be for distances in the ranges of 0.1m to 10m, 5m to 25m, 20m to 50m, 50m to 100m, 100m to 250m, etc. The distance ranges associated with various detection signals may overlap. For example, the first detection window may detect return light from an object at a distance of 0m to 50m from the SEI system, the second window may correspond to an object at 25m to 75m, and the third window may correspond to an object at 50 to 150m.

[0171] Method 5500 may be executed by one or more arbitrary processors, such as, but not limited to, a processor of any of the aforementioned systems. A system for generating a depth image of a scene based on detection (results) of a short-wave infrared (SWIR) electro-optical imaging system (SEI system) is disclosed. The system includes at least one processor. The at least one processor: (i) obtains a plurality of detection signals of the SEI system, where each detection signal indicates the amount of light from a specific direction within the field of view (FOV) of the SEI system captured by at least one focal plane array (FPA) detector of the SEI system over respective detection time frames, the at least one FPA includes a plurality of individual photosites, each photosite includes a Ge element in which colliding photons are converted into detected charges, and for each of a plurality of directions within the FOV, the various detection signals indicate reflected SWIR irradiation levels from various distance ranges along the direction; and (ii) is configured to execute a process of processing the plurality of detection signals such that a three-dimensional (3D) detection map including a plurality of 3D positions within the FOV where a plurality of objects are detected is determined. Here, the process of processing includes a process of compensating for a dark current (DC) level accumulated during the collection of the plurality of detection signals derived from the plurality of Ge elements. Also, the process of compensating includes a process of applying various degrees of DC compensation to the plurality of detection signals detected by various photosites of the at least one FPA.

[0172] Optionally, the process of compensating may include subtracting a first DC compensation offset from a first detection signal detected by a first detection element (DE) corresponding to a first detection range, and subtracting a second DC compensation offset different from the first DC compensation offset from a second detection signal detected by the first DE corresponding to a second detection range that is farther from the SEI system than the first detection range.

[0173] Optionally, at least one processor may be further configured to perform: (a) triggering the emission of a first irradiation in coordination with the start of exposure of a first gated image in which a plurality of first detection signals are detected for various directions among a plurality of directions; (b) triggering the emission of a second irradiation in coordination with the start of exposure of a second gated image in which a plurality of second detection signals are detected for the various directions; and (c) triggering the emission of a third irradiation in coordination with the start of exposure of a third gated image in which a plurality of third detection signals are detected for the various directions. In such a case, at least one processor may be further configured to perform, as part of the step of determining a 3D detection map: (a) determining the presence of a first object at a first 3D position within a first direction among the various directions based on at least one detection signal from each of the first image, the second image, and the third image; and (b) determining the presence of a second object at a second 3D position within a second direction among the various directions based on at least one detection signal from each of the first image, the second image, and the third image. Here, the distance of the first object from the SEI system is at least twice the distance of the second object from the SEI system. The gated image (or its equivalent) may be achieved by utilizing various readout structures of a plurality of photosites of the PDA, and may be achieved, for example, by any of the methods described above.

[0174] Optionally, the step of applying various levels of DC compensation to a plurality of detection signals detected by various photosites of at least one FPA includes using the detected dark current levels of various reference photosites shielded from the light coming from the FOV. Optionally, the step of compensating may include applying various levels of DC compensation to a plurality of detection signals simultaneously detected by various photosites of at least one FPA. Optionally, one or more processors (and, in some cases, all processors) among at least one of the processors may be part of the SEI system.

[0175] Referring to the diagrams described above, method 5500, and any combination of two or more of its steps, may be executed by any one of the processors of the processors described above with respect to the previous diagrams. Referring to the diagrams described above, method 4600, and any combination of two or more of its steps, may be executed by any one of the processors of the processors described above with respect to the previous diagrams. Method 5500 and the related system have been discussed in connection with generating a depth image of a scene based on detection of a SWIR electro-optical imaging system, but it should be noted that similar methods and systems may be used with modifications as needed to generate a depth image of a scene based on detection of an electro-optical imaging system that operates in other parts of the electromagnetic spectrum and has high dark current, or other noise and interference characteristics with respect to the signal.

[0176] Figs. 26A - 26C show a sensor 5200 according to an embodiment of the subject matter of the present disclosure. The sensor 5200 is operable to detect depth information of an object within its FOV. Note that the sensor 5200 may be a variant of any one of the plurality of sensors described above (under any perspective) having the adaptations discussed below (including the control device 5250 and its functionality, and related switches). Many of the details, options, and variants described above with respect to the various sensors are not repeated for brevity, but may be implemented in the sensor 5200 with modifications as needed.

[0177] Sensor 5200 includes an FPA 5290 that includes a plurality of photosites 5212, each operable to detect light arriving from a PS view IFOV. The various PSs 5212 are directed in various directions within the FOV 5390 of sensor 5200. For example, referring to the FOV 5390 of FIG. 30, the first PS 5212(a) may be directed toward the first IFOV 5312(a), the second PS 5212(b) may be directed toward the second IFOV 5312(b), and the third PS 5212(c) may be directed toward the third IFOV 5312(c). The portion of the FOV 5390 that can be collectively detected by a read group of the plurality of PSs (collectively shown as 5210 and including PS 5212(a), PS 5212(b), and PS 5212(c)) is shown as 5310. Note that, for example, any type of PS 5312, including a single photodiode or a plurality of photodiodes, may be implemented. The various PSs 5212 of a single read group 5210 (and, optionally, the various PSs 5212 of the entire FPA 5290) may be substantially duplicates of each other, but need not be, and various types of PSs 5212 may be implemented, optionally, in a single FPA 5290 and, further, in a single read group 5210. The various PSs 5212 of a single read group 5210 (and, optionally, the various PSs 5212 of the entire FPA 5290) may have sensitivity to the same portion(s) of the electromagnetic spectrum or to different portions of the electromagnetic spectrum. One or more arbitrary PSs of the plurality of types of PSs described elsewhere in this disclosure (e.g., as described above) may be implemented as PS 5212.

[0178] Optionally, all of the plurality of PS5212 in a single read group 5210 are physically adjacent (proximate) to each other (i.e., each PS4212 in read group 5210 is physically adjacent to at least one other PS5212 in read group 5210 such that at least one continuous path through adjacent PS5212 between any two PS5212 in read group 5210 is formed). However, a discontinuous read group may be implemented (e.g., if some of the PS5212 of FPA5290 are defective, if some of the PS5212 of FPA5290 are unused (e.g., to conserve power), or for any other reason. If FPA5290 includes two or more read groups 5210, the read groups 5210 may (but need not necessarily) include the same number of PS5212, may (but need not necessarily) include the same type of PS5212, and may (but need not necessarily) be arranged in the same geometric configuration (e.g., in a 1×3 array as shown in the examples of FIGS. 28A and 28B).

[0179] Sensor 5200 includes at least one read set 5240 that includes a plurality of readout circuits 5242. Each of the plurality of readout circuits 5242 within a single read set 5240 is connected by a plurality of switches 5232 (collectively shown as 5230) to the same read group 5210 of the plurality of PSs 5212 of FPA 5290. The readout circuit 5242 reads signals from one or more PSs 5212 connected to the readout circuit 5242 and outputs data (e.g., analog or digital) indicating the level of light received by each of the one or more PSs 5212. The output data may be provided to a processor, communicated to another system, stored in a memory module, or used in any other way. The various readout circuits 5242 of a single read set are connected to various PSs 5122 of each read group 5210 and are operable to output an electrical signal indicating the amount of light impinging on the PSs 5212 of the read group 5210 when the read group 5210 is connected to each readout circuit 5242 via at least one of the plurality of switches 5230. Note that the switches 5232 can be implemented with any suitable switching technology, such as any combination of one or more transistors. The switches 5232 can be implemented as part of FPA 5290, but need not necessarily be. For example, some or all of the plurality of switches 5232 may be included in a readout wafer that is electrically (and optionally physically) connected to FPA 5290. The readout circuits 5242 can be implemented as part of FPA 5290, but need not necessarily be. For example, some or all of the plurality of readout circuits 5242 may be included in a readout wafer that is electrically (and optionally physically) connected to FPA 5290.

[0180] In addition, the sensor 5200 includes at least one control device 5250 configured to change the switching states of a plurality of switches 5230 and operable to change the switching states of the plurality of switches 5230 so that various readout circuits 5242 of a readout set 5240 are connected to various readout groups 5210 (i.e., a plurality of PSs 5212 of the readout group 5210) at various times to expose various readout circuits 5242 to reflected irradiation light from objects located at various distances from the sensor 5200. The irradiation light may be emitted by a light source 5260 included in the sensor 5200 or by a light source 5260 included in any electro-optical system (e.g., a camera, a telescope, a spectrometer) in which the sensor 5200 is mounted. Also, the irradiation light may be emitted by another light source associated with the sensor 5200 (regardless of whether the light source is controlled thereby or by a common control device therewith) or by any other light source.

[0181] Further, the sensor 5200 includes a processor 5220 configured to obtain a plurality of electrical signals from a readout set 5240 indicative of detection levels of reflected light collected from a plurality of IFOVs of a plurality of PSs 5212 of a readout group 5210 to determine depth information of an object indicative of the distance of the object from the sensor 5200. Such an object can be, for example, a tower 5382 in the background of the FOV 5390 or a tree 5384 in the foreground of the FOV 5390. For example, method 5500 or any of the techniques described above (e.g., with respect to FIGS. 24 and 37) may be implemented by the processor 5200.

[0182] Figures 26A, 26B, and 26C show the same sensor 5200 in various switching states of the read set 5240. The read set 5240 is connected to a read group 5210, which includes three PSs (PS5212(a), PS5212(b), and PS5212(c)) in the illustrated example. In Figure 38A, the read circuit 5242 is not connected to any of the PS5212s, and in this case, reading is not possible. In Figure 38B, a single read circuit 5242(a) is connected to all three PS5212s of the read group 5210. This enables a single read circuit 5242 to read signals indicating light that impinges on all three PS5212s. For example, at various times between sampled frames, all of the PS5212s in the read group 5210 may be sequentially connected to one read circuit 5242 at certain times so that the light collected by all of the multiple PS5212s at various times is measured by various read circuits 5242 at various times. An example of this is given in the diagram 5410 of Figure 27.

[0183] In Figure 26C, a suitable subgroup of multiple read circuits (including read circuit 5242(b) and read circuit 5242(c) in the illustrated example) is connected to all of the multiple PS5212s of the read group 5210. This enables the multiple read circuits 5242 to read signals indicating light that impinges on all three PS5212s. Connecting two read circuits 5212 to the read group 5210 is illustrated in diagrams 5420 and 5430 of Figure 27. Depending on the implementation requirements, three or more read circuits 5212 may optionally be connectable to the read group 5210. One implementation example of connecting multiple read circuits 5212 to a single read group 5210 is at the transition time between two detection time windows of different detection signals (as described above with respect to Figures 24 and 25, for example).

[0184] For example, at various times between sampled frames, all of the light collected by all of the plurality of PSs 5212 of the read group 5210 at all times may be measured by various read circuits 5242 at various times. All of the plurality of PSs 5212 may be sequentially connected to one read circuit 5242 at a time. Such an example is given in diagram 5410 of FIG. 27. In other embodiments, at some times, only one read circuit 5242 is connected to the plurality of PSs 5212 of the read group 5210, while two or more read circuits 5242 are connected in parallel to the plurality of PSs 5212 of the read group 5210. Such examples are given in diagram 5420 and diagram 5430 of FIG. 27. In still other examples, various subsets of the plurality of read circuits 5242 may be connected in parallel to the plurality of PSs 5212 of the read group 5210 at various times. For all of the options, it should be noted that optionally, there may be idle times when none of the read circuits 5242 are connected to the PSs 5212 of the read group 5210. Such examples are given in diagram 5440 and diagram 5450 of FIG. 27. Diagram 5460 of FIG. 27 illustrates various combinations of connections being implemented in a single frame, in a single read circuit 5242, in a plurality of read circuits 5242, and situations where no read circuit 5242 is connected to the read group 5210 at various times during the detection duration of the sensor.

[0185] Figures 28A - 28C illustrate sensor 5200 according to an embodiment of the subject matter of the present disclosure. Optionally, switching network 5230 includes a switchable circuit that enables individual readout circuits 5242 to be connected to individual PS5212s at some times and to multiple PS5212s simultaneously at other times. In the illustrated embodiment, in Figure 28B, readout circuit 5242 (ROC1) is connected to all three of PS5212(a), 5212(b), and 5212(c). On the other hand, in Figure 28C, the same readout circuit 5242 (ROC1) is connected to only one PS5242(a), while the other two readout circuits 5242 (ROC2) and 5242 (ROC3) are each connected to a single PS5212. Note that the operating parameters of the detection (e.g., photodiode bias, amplification gain, etc.) may differ in these two detection states such that, for example, different amounts of light collected by different amounts of PS5212 are handled.

[0186] Sensor 5200 is operable to detect depth information of an object within its FOV. It should be noted that sensor 5200 can be a variant of any of the above - described plurality of sensors (under any perspective) having the adaptations discussed below (including control device 5250 and its functionality, and associated switches). Many of the details, options, and variants described above for the various sensors are not repeated for brevity but may be modified as needed and implemented in sensor 5200.

[0187] In addition, sensor 5200 may operate in other detection modes that provide a detection output that does not include depth information. For example, in some detection modes, sensor 5200 may operate as a camera that provides a 2D image where various detection values indicate the amount of light reflected from a portion of the FOV within one (or more) detection durations. Note that such detection modes may involve active illumination of the FOV but not necessarily.

[0188] FIG. 29 shows a sensor 5200 according to an embodiment of the subject matter of the present disclosure. Similar to other diagrams of the sensor 5200, it is clear that the number of PSs 5212 in the sensor may vary significantly from the illustrated figure and may be, for example, within a range of thousands, millions, etc.

[0189] FIG. 30 shows the FOV 5390 of an electro-optical system and a plurality of instantaneous FOVs 5312 according to an embodiment of the subject matter of the present disclosure.

[0190] FIGS. 31A and 31B show various examples of a sensor 5200 according to an embodiment of the subject matter of the present disclosure. In the examples of FIGS. 31A and 31B, light rays reaching from the FOV towards a plurality of readout groups of PSs (collectively shown as 5210) and optional light rays emitted from an optional light source 5260 towards the FOV are shown. Similar to other diagrams of the sensor 5200, it is clear that the number of PSs 5212 in the sensor may vary significantly from the illustrated figure and may be, for example, within a range of thousands, millions, etc.

[0191] Regarding sensor 5200 and the systems, methods, and sensors described with respect to FIGS. 24-31B, it should be noted that a plurality of PSs including a plurality of readout structures (also referred to as "readout compounds") can be implemented instead of the plurality of PSs to detect signals indicating light arriving at various times from the instantaneous FOV. For example, a first readout structure (e.g., readout structure 6570, readout structure 9030, or floating diffusion 7540 acting as a readout structure, etc.) may be used to detect signal S1 in FIG. 25, a second readout structure of the same PS may be used to detect signal S2 in FIG. 25, and a third readout structure of the same PS may be used to detect signal S3 in FIG. 25. For any system and any method that utilize a combination of a plurality of PSs to detect signals from the same portion of the FOV at various times as discussed with respect to FIGS. 24-31B, an equivalent system or method that utilizes a plurality of readout structures of any single PS of the disclosure for detecting signals from the same portion of the FOV at various times may be implemented with modifications as needed.

[0192] Also, the present disclosure includes the following numbered clauses.

[0193] 1. An IR light detection system operable to detect infrared (IR) radiation, at least one photosite (PS), a germanium (Ge) photosensitive region operable to generate electron-hole pairs in response to impinging IR photons, the Ge photosensitive region including an absorber doped region having a first polarity, and a silicon (Si) layer including a diode, the diode including a first doped region of the first polarity and a second doped region of a second polarity opposite the first polarity, including at least one PS, wherein the first doped region is located between the second doped region and the absorber doped region, At least one power supply operable to provide a first region voltage to the first doped region and a second region voltage to the second region, and A controllable power supply, An activation voltage that forces the charge carriers (CCSP) of the second polarity to move from the Ge photosensitive region towards the photodiode, and the CCSP is collected in the photodiode through a readout electrode electrically coupled to the second doped region, and the activation voltage is provided to the Ge photosensitive region during the sampling duration of the PS, By providing a rest voltage to the Ge photosensitive region after the end of the sampling duration, which attenuates the forced movement of the CCSP towards the photodiode, the collection of the signal by the PS is stopped A controllable power supply operable to: An IR light detection system comprising:

[0194] 2. The IR light detection system according to claim 1, wherein the amplitude of the rest voltage is less than or equal to one-tenth of the amplitude of the activation voltage.

[0195] 3. The IR light detection system according to claim 1, wherein the sampling duration is shorter than 10 nanoseconds.

[0196] 4. The IR light detection system according to claim 1, wherein IR photons from the field of view of the IR light detection sensor pass through the Si layer before being absorbed by the Ge photosensitive region.

[0197] 5. (a) The Ge photosensitive region and the photodiode, and (b) At least one of the power supplies, further comprising a passivation layer therebetween. The IR light detection system according to claim 1.

[0198] 6. An electro-optical detection system including the IR light detection system according to any one of claims 1 to 5, a plurality of photosites, and at least one optical interface for directing light from the field of view of the electro-optical detection system to the IR light detection sensor, a readout circuit operable to read from each of the plurality of photosites at least one electrical signal corresponding to the number of photons captured by the Ge photosensitive region during the sampling duration of each respective photosite, a processor operable to process detection data provided by the readout circuit indicative of the plurality of electrical signals such that an IR image of the field of view is provided, An electro-optical detection system comprising.

[0199] 7. The electro-optical detection system according to claim 6, wherein the processor is further configured to process the detection data such that the presence of at least one object in the field of view is determined.

[0200] 8. An IR light detection system operable to detect infrared (IR) radiation, at least one photosite, a Ge photosensitive region operable to generate electron-hole pairs in response to impinging IR photons, the Ge photosensitive region including an absorber doped region having a first polarity, a silicon (Si) layer including a first doped region, a storage well, a floating diffusion, and a transfer gate, at least one photosite comprising, at least one controllable power source operable to modulate a voltage to at least one of the first doped region, the Ge photosensitive region, and the floating diffusion, a control device, at one time, forcing charge carriers of the second polarity (CCSP) to migrate from the Ge photosensitive region toward the storage well by providing a voltage across the Ge photosensitive region, the first doped region, and the floating diffusion; At another time, providing another voltage to the Ge photosensitive region, the first doped region, and the floating diffusion to weaken the forced migration of the CCSP towards the storage well, thereby stopping the collection of signals by the storage well; and intermittently transferring charge carriers of the second polarity from the storage well through the transfer gate to the floating diffusion, where the charge carriers are read out via a readout electrode electrically coupled to the floating diffusion. a controller operable to control at least one of the controllable power sources and the transmission gate such that An IR light detection system, including:

[0201] 9. 10. The IR light detection system of claim 8, wherein the storage well is at least partially pinned under a pinned layer of opposite polarity.

[0202] 10. 10. An IR light detection system as claimed in claim 8 or claim 9, wherein at said other time, the charge carriers of the second polarity are discarded from the photosite without being read out.

[0203] 11. 10. An IR light detection system according to claim 8 or claim 9, wherein the storage well is disposed between the first doped region and the floating diffusion.

[0204] 12. 10. An IR light detection system according to claim 8 or claim 9, wherein the first doped region is disposed between the storage well and the Ge photosensitive region.

[0205] 13. The IR light detection system according to claim 8 or claim 9, wherein the sampling duration is shorter than 10 nanoseconds.

[0206] 14. The IR light detection system according to claim 8 or claim 9, wherein IR photons from the field of view of the IR light detection sensor pass through the Si layer before being absorbed by the Ge photosensitive region.

[0207] 15. (a) between the Ge photosensitive region and the photodiode, and (b) between at least one of the power supplies, The IR light detection system according to claim 8 or claim 9, further comprising a passivation layer.

[0208] 16. An IR light detection system operable to detect infrared (IR) radiation, at least one photosite, a germanium (Ge) photosensitive region operable to generate electron-hole pairs in response to colliding IR photons, the Ge photosensitive region including an absorber doped region doped to have a first polarity, a silicon (Si) layer in which a plurality of readout structures are implemented, each readout structure a remotely doped region doped to have a second polarity, an intermediate doped region disposed between the remotely doped region and the Ge photosensitive region, the intermediate doped region being doped to have a second polarity opposite to the first polarity, including an Si layer, including at least one photosite, a controllable power supply operable to provide a controlled voltage to the Ge photosensitive region and to the remotely doped region and the intermediate doped region of each of the plurality of readout structures. On the Ge photosensitive region, on the first remote doped region of the first readout structure, and on the first intermediate doped region of the first readout structure, a relative voltage is maintained for a first sampling duration such that, from the Ge photosensitive region, the charge carriers (CCSP) of the second polarity are forced to move toward the first readout structure among the plurality of readout structures by a first tensile force. Here, the CCSP is collected in the first readout structure via a first readout electrode electrically coupled to the first remote doped region; A voltage is maintained for the first sampling duration on the plurality of doped regions of the first group of the plurality of readout structures including the rest of the plurality of readout structures other than the first readout structure, such that the tensile force applied to the charge carriers of the second polarity toward each of the plurality of remote doped regions of the first group of the plurality of readout structures is less than half of the first tensile force; On the Ge photosensitive region, on the second remote doped region of the second readout structure, and on the second intermediate doped region of the second readout structure, a relative voltage is maintained for a second sampling duration after the first sampling duration such that, from the Ge photosensitive region, the charge carriers (CCSP) of the second polarity are forced to move toward the second readout structure among the plurality of readout structures by a second tensile force. Here, the CCSP is collected in the second readout structure via a second readout electrode electrically coupled to the second remote doped region; A voltage is maintained for the second sampling duration on the plurality of doped regions of the second group of the plurality of readout structures including the rest of the plurality of readout structures other than the second readout structure, such that the tensile force applied to the charge carriers of the second polarity toward each of the plurality of remote doped regions of the second group of the plurality of readout structures is less than half of the second tensile force; On the Ge photosensitive region, on the first remote doped region, and on the first intermediate doped region, a relative voltage is maintained during a third sampling duration after the second sampling duration, such that charge carriers (CCSP) of the second polarity are forced to move from the Ge photosensitive region towards the first readout structure by a third tensile force, where the CCSP are collected in the first readout structure via the first readout electrode; and, A voltage is maintained during the third sampling duration on the doped regions of the first group of the plurality of readout structures such that the tensile force applied to the charge carriers of the second polarity towards each of the remote doped regions of the first group of the plurality of readout structures is less than half of the third tensile force A controllable power supply operable to: An IR light detection system comprising:

[0209] 17. The IR light detection system according to claim 16, wherein the first voltage applied to the first intermediate doped region during the first sampling duration is at least 10 times greater than any voltage applied to any intermediate doped region of the first group of the plurality of readout structures averaged over the first duration.

[0210] 18. The IR light detection system according to claim 16 or claim 17, wherein IR photons from the field of view of the IR light detection sensor pass through the Si layer before being absorbed by the Ge photosensitive region.

[0211] 19. (a) between the Ge photosensitive region and the photodiode; and (b) between at least one of the power supplies, the IR light detection system according to claim 16 or claim 17, further comprising a passivation layer.

[0212] 20. The IR light detection system according to claim 16 or claim 17, further comprising at least one optically active layer joined to the polished side of the Si layer disposed on the side opposite to the side where the Ge photosensitive region spreads.

[0213] 21. A method for detecting infrared (IR) radiation, comprising: providing a first region voltage to a first doped region of a photosite (PS) and providing a second region voltage to a second region of the PS, wherein the PS is a germanium (Ge) photosensitive region operable to generate electron-hole pairs in response to colliding IR photons, the Ge photosensitive region including an absorber doped region having a first polarity; is a silicon layer including a diode, the diode including a first doped region of the first polarity and a second doped region of a second polarity opposite to the first polarity; and the first doped region is located between the second doped region and the absorber doped region; while providing the first region voltage and the second region voltage, an activation voltage that forcibly moves charge carriers (CCSP) of the second polarity from the Ge photosensitive region toward the photodiode, the CCSP being collected in the photodiode via a readout electrode electrically coupled to the second doped region, providing the activation voltage to the Ge photosensitive region during a sampling duration of the photosite; and stopping signal collection by the photosite by providing a rest voltage that attenuates the forced movement of the CCSP toward the photodiode to the Ge photosensitive region after the end of the sampling duration comprising a method.

[0214] 22. The method according to claim 21, wherein the photosite is a photosite of an IR light detector system.

[0215] 23. A method for detecting infrared (IR) radiation, comprising: modulating a voltage applied to at least one region of a photosite (PS), wherein the region is selected from the group consisting of a first doped region of the PS, a germanium (Ge) photosensitive region of the PS, and a floating diffusion of the PS; the PS comprises at least: (a) a Ge photosensitive region operable to generate electron-hole pairs in response to impinging IR photons, the Ge photosensitive region including an absorber doped region having a first polarity; (b) a silicon layer including the first doped region, a storage well, the floating diffusion, and a transfer gate; and the modulating step comprises: at times, forcing charge carriers of a second polarity (CCSP) to move from the Ge photosensitive region toward the storage well by providing a voltage to the Ge photosensitive region, the first doped region, and the floating diffusion; at other times, stopping signal collection by the storage well by attenuating the forced movement of the CCSP toward the storage well by providing another voltage to the Ge photosensitive region, the first doped region, and the floating diffusion; and intermittently, transferring charge carriers of the second polarity from the storage well, through the transfer gate, to the floating diffusion, where the CCSP is read in the floating diffusion via a readout electrode electrically coupled to the floating diffusion. A method comprising the above steps.

[0216] 24. The method according to claim 23, wherein the photosite is a photosite of an IR photodetector.

[0217] 25. The method according to claim 23 or claim 24, wherein the amplitude of the resting voltage is less than or equal to one tenth of the amplitude of the activation voltage.

[0218] 26. A method for detecting infrared (IR) radiation, providing a controlled voltage to a plurality of regions of a photosite (PS), comprising: wherein the PS is a germanium (Ge) photosensitive region operable to generate electron-hole pairs in response to colliding IR photons, the Ge photosensitive region comprising an absorber doped region doped to have a first polarity, a plurality of doped regions of a plurality of readout structures implemented on a silicon layer of the photosite, for each of the plurality of readout structures, (a) a remote doped region doped to have a second polarity, (b) an intermediate doped region disposed between the remote doped region and the Ge photosensitive region, the intermediate doped region being doped to have a second polarity opposite to the first polarity, comprising a plurality of doped regions of a plurality of readout structures, comprising: wherein the providing step is maintaining a relative voltage for a first sampling duration on the Ge photosensitive region, on a first remote doped region of the first readout structure, and on a first intermediate doped region of the first readout structure, such that charge carriers of the second polarity (CCSP) are forced to move by a first tensile force from the Ge photosensitive region towards a first readout structure among the plurality of readout structures, wherein the CCSP is collected in the first readout structure via a first readout electrode electrically coupled to the first remote doped region; maintaining a voltage for the first sampling duration on the plurality of doped regions of the first group of the plurality of readout structures including the remainder of the plurality of readout structures other than the first readout structure, such that a tensile force applied to the charge carriers of the second polarity towards each of the plurality of remote doped regions of the first group of the plurality of readout structures is less than half of the first tensile force; A step of maintaining a relative voltage on the Ge photosensitive region, on the second remote doping region of the second readout structure, and on the second intermediate doping region of the second readout structure, for a second sampling duration after the first sampling duration, such that the charge carriers (CCSP) of the second polarity are forced to move towards the second readout structure of the plurality of readout structures by a second tensile force, where the CCSP is collected in the second readout structure via a second readout electrode electrically coupled to the second remote doping region; A step of maintaining a voltage on the plurality of doping regions of the second group of the plurality of readout structures, for the second sampling duration, such that the tensile force applied to the charge carriers of the second polarity towards each of the plurality of remote doping regions of the second group of the plurality of readout structures other than the second readout structure is less than half of the second tensile force; A step of maintaining a relative voltage on the Ge photosensitive region, on the first remote doping region, and on the first intermediate doping region, for a third sampling duration after the second sampling duration, such that the charge carriers (CCSP) of the second polarity are forced to move towards the first readout structure by a third tensile force, where the CCSP is collected in the first readout structure via the first readout electrode; and, A step of maintaining a voltage on the plurality of doping regions of the first group of the plurality of readout structures, for the third sampling duration, such that the tensile force applied to the charge carriers of the second polarity towards each of the plurality of remote doping regions of the first group of the plurality of readout structures is less than half of the third tensile force A method comprising the above steps.

[0219] 27. The method according to claim 26, wherein the first voltage applied to the first intermediate doping region during the first sampling duration is at least 10 times any voltage applied to any intermediate doping region of the first group of the plurality of read structures averaged over the first duration.

[0220] 28. The method according to claim 26 or claim 27, which is simultaneously performed on a plurality of photosites.

[0221] 29. The method according to claim 26 or 27, further comprising the step of providing a voltage to a plurality of regions of the photosite during a discard duration such that the charge carriers of the second polarity are driven towards the electrode through which they are disposed from the photosite without being read.

[0222] 30. A method for generating a depth image of a scene based on detection of a short-wave infrared (SWIR) electro-optical imaging system (SEI system), comprising: obtaining a plurality of detection signals of the SEI system, wherein each detection signal represents the amount of light from a specific direction within the field of view (FOV) of the SEI system captured by at least one focal plane array (FPA) detector of the SEI system over respective detection time frames, at least one of the FPAs includes a plurality of individual photosites, each photosite includes a germanium (Ge) element in which colliding photons are converted into detected charges, and for each of a plurality of directions within the FOV, the various detection signals represent reflected SWIR irradiation levels from various distance ranges along that direction; and, processing the plurality of detection signals such that a three-dimensional (3D) detection map including a plurality of 3D positions within the FOV where a plurality of objects are detected is determined. comprising The step of performing the processing includes a step of compensating for a dark current (DC) level accumulated during the collection of a plurality of the detection signals derived from a plurality of the germanium elements. The step of compensating includes a step of applying various degrees of DC compensation to a plurality of detection signals detected by various photosites of at least one of the FPAs, a method.

[0223] 31. The step of compensating includes a step of subtracting a first DC compensation offset from a first detection signal detected by a first DE corresponding to a first detection range; a step of subtracting a second DC compensation offset different from the first DC compensation offset from a second detection signal detected by a first photosite corresponding to a second detection range farther from the SEI system than the first detection range; The method according to claim 30, including the above.

[0224] 32. a step of triggering the emission of a first irradiation in cooperation with the start of exposure of a first gated image in which a plurality of first detection signals are detected for various directions among the plurality of directions; a step of triggering the emission of a second irradiation in cooperation with the start of exposure of a second gated image in which a plurality of second detection signals are detected for various directions; a step of triggering the emission of a third irradiation in cooperation with the start of exposure of a third gated image in which a plurality of third detection signals are detected for various directions; further including The step of performing the processing includes a step of determining the presence of a first object at a first 3D position within a first direction among the various directions based on at least one detection signal from each of the first image, the second image, and the third image; a step of determining the presence of a second object at a second 3D position within a second direction among the various directions based on at least one detection signal from each of the first image, the second image, and the third image. comprising The method according to claim 30, wherein the distance of the first object from the SEI system is at least twice the distance of the second object from the SEI system.

[0225] 33. A sensor operable to detect depth information of an object, a focal plane array (FPA) including a plurality of photosites, each photosite being operable to detect light arriving from the instantaneous field of view (IFOV) of the photosite, and the various photosites being directed in various directions within the field of view of the sensor; an FPA, a readout set of a plurality of readout circuits, each of which is coupled by a plurality of switches to a readout group of the plurality of photosites of the FPA, and when the readout group is connected to each of the readout circuits via at least one of the plurality of switches, the readout group is operable to output an electrical signal indicating the amount of light colliding with the plurality of photosites of the readout group; a readout set of a plurality of readout circuits, a control device operable to change a plurality of switching states of the plurality of switches such that the various readout circuits of the readout set are coupled to the readout group at various times to expose the various readout circuits to reflected light from a plurality of objects located at various distances from the sensor; a control device, a processor configured to obtain a plurality of electrical signals from the readout set indicating detection levels of reflected light collected from the plurality of IFOVs of the readout group of the plurality of photosites to determine depth information regarding the object indicating the distance of the object from the sensor; a processor, A sensor comprising.

[0226] For all of the PSs described above and throughout this disclosure, optionally, any of those PSs may include a guard ring (not shown) or trenching that completely, incompletely, or partially surrounds the PS (or a portion thereof). Such partial or complete trenching or guard ring is not shown in the diagrams for purposes of clarity and simplicity of the figures. Many uses (applications) and ways of implementation are known to those skilled in the art and are not disclosed herein for the sake of brevity.

[0227] However, other modifications, variations and alternative forms are also possible. Thus, this specification and the drawings are to be regarded in an illustrative rather than a restrictive sense.

[0228] In the claims, any reference signs placed in parentheses shall not be construed as limiting the claims. The word "comprising" does not exclude the existence of other elements or steps than those listed in a claim. Further, the words "a" or "an" as used herein are defined as one or more than one. Also, the use of introductory phrases such as "at least one" and "one or more" in the claims shall not be construed to limit any particular claim containing such an introductory phrase to the disclosure of only one such element, even if the same claim contains the introductory phrase "one or more" or "at least one" and indefinite articles such as "a" or "an". The same applies to the use of definite articles. Unless otherwise specified, words such as "first" and "second" are used arbitrarily to distinguish the elements indicated by such words. For this reason, these words are not necessarily intended to indicate a temporal or other precedence between such elements. The mere fact that certain means are recited in mutually different claims does not indicate that a combination of these means cannot be advantageously employed.

[0229] While certain configurations of the present disclosure have been illustrated and described herein, many modifications, substitutions, changes, and equivalents will occur to those skilled in the art. Accordingly, it is to be understood that the appended claims are intended to cover all modifications and changes that fall within the true spirit of the present disclosure. It will be understood that the above-described embodiments are presented by way of example only, and that various configurations and combinations of these configurations may be changed and modified. Although various embodiments have been shown and described, there is no intention to limit the present disclosure by such disclosure. Rather, it is intended to cover all modifications and alternative configurations that fall within the scope of the present disclosure as defined by the appended claims.

Brief Description of the Drawings

[0230]

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Claims

Claim 1 An IR light detection system operable to detect infrared (IR) radiation, at least one photosite, a germanium (Ge) photosensitive region operable to generate electron-hole pairs in response to colliding IR photons, the Ge photosensitive region including an absorber doped region doped to have a first polarity, a silicon (Si) layer in which a plurality of readout structures are implemented, each readout structure including a remotely doped region doped to have a second polarity, an intermediate doped region disposed between the remotely doped region and the Ge photosensitive region, the intermediate doped region being doped to have a second polarity opposite to the first polarity, the Si layer including, at least one photosite including, a controllable power source operable to provide a controlled voltage to the Ge photosensitive region and to the remotely doped region and the intermediate doped region of each of the plurality of readout structures, maintaining a relative voltage for a first sampling duration on the Ge photosensitive region, on a first remotely doped region of the first readout structure, and on a first intermediate doped region of the first readout structure such that charge carriers of the second polarity (CCSP) are forced to move by a first tensile force from the Ge photosensitive region towards a first readout structure of the plurality of readout structures, wherein the charge carriers of the second polarity (CCSP) are collected in the first readout structure via a first readout electrode electrically coupled to the first remotely doped region; maintaining a voltage for the first sampling duration on the plurality of remotely doped regions and the plurality of intermediate doped regions of the first group of the plurality of readout structures including the remainder of the plurality of readout structures other than the first readout structure such that the tensile force applied to the charge carriers of the second polarity towards each of the plurality of remotely doped regions of the first group of the plurality of readout structures is less than half of the first tensile force; On the Ge photosensitive region, on the second remote doped region of the second readout structure, and on the second intermediate doped region of the second readout structure, a relative voltage is maintained during a second sampling duration after the first sampling duration so that the charge carriers (CCSP) of the second polarity are forced to move from the Ge photosensitive region toward the second readout structure among the plurality of readout structures by a second tensile force. Here, the charge carriers (CCSP) of the second polarity are collected in the second readout structure via a second readout electrode electrically coupled to the second remote doped region; A voltage is maintained during the second sampling duration on the plurality of remote doped regions and the plurality of intermediate doped regions of the second group of the plurality of readout structures including the rest of the plurality of readout structures other than the second readout structure so that the tensile force applied to the charge carriers of the second polarity toward each of the plurality of remote doped regions of the second group of the plurality of readout structures is less than half of the second tensile force; On the Ge photosensitive region, on the first remote doped region, and on the first intermediate doped region, a relative voltage is maintained during a third sampling duration after the second sampling duration so that the charge carriers (CCSP) of the second polarity are forced to move from the Ge photosensitive region toward the first readout structure by a third tensile force. Here, the charge carriers (CCSP) of the second polarity are collected in the first readout structure via the first readout electrode; and A voltage is maintained during the third sampling duration on the plurality of remote doped regions and the plurality of intermediate doped regions of the first group of the plurality of readout structures so that the tensile force applied to the charge carriers of the second polarity toward each of the plurality of remote doped regions of the first group of the plurality of readout structures is less than half of the third tensile force A controllable power supply operable to: An IR light detection system including Claim 2 The first voltage applied to the first intermediate doped region during the first sampling duration is at least 10 times any voltage applied to any intermediate doped region of the first group of the plurality of readout structures averaged over the first sampling duration. The IR light detection system according to claim 1.

3. The IR photons from the field of view of the IR light detection system pass through the Si layer before being absorbed by the Ge photosensitive region. The IR light detection system according to claim 1 or claim 2.

4. (a)Between the Ge photosensitive region and the plurality of the readout structures, (b)Between at least one of the power supplies, The IR light detection system according to claim 1 or claim 2, further comprising a passivation layer.

5. The IR light detection system according to claim 1 or claim 2, further comprising at least one optically active layer bonded to the polished side of the Si layer disposed on the side opposite to the side where the Ge photosensitive region extends.

6. A method for detecting infrared (IR) radiation, comprising: Providing a controlled voltage to a plurality of regions of a photosite (PS). Including, The photosite (PS) is A germanium (Ge) photosensitive region operable to generate electron-hole pairs in response to impinging IR photons, the Ge photosensitive region including an absorber doped region doped to have a first polarity, A plurality of doped regions of a plurality of readout structures implemented on the silicon layer of the photosite, for each of the plurality of readout structures, (a)A remote doped region doped to have a second polarity, (b)An intermediate doped region disposed between the remote doped region and the Ge photosensitive region, the intermediate doped region being doped to have a second polarity opposite to the first polarity. Including a plurality of doped regions of a plurality of readout structures, Including, The providing step is A step of maintaining a relative voltage for a first sampling duration on the Ge photosensitive region, on a first remote doped region of the first readout structure, and on a first intermediate doped region of the first readout structure, such that charge carriers (CCSP) of the second polarity are forced to move from the Ge photosensitive region toward the first readout structure of the plurality of readout structures by a first tensile force, wherein the charge carriers (CCSP) of the second polarity are collected in the first readout structure via a first readout electrode electrically coupled to the first remote doped region; A step of maintaining a voltage for the first sampling duration on the plurality of doped regions of the first group of the plurality of readout structures, such that a tensile force applied to the charge carriers of the second polarity toward each of the plurality of remote doped regions of the first group of the plurality of readout structures other than the first readout structure is less than half of the first tensile force; A step of maintaining a relative voltage for a second sampling duration, which is after the first sampling duration, on the Ge photosensitive region, on a second remote doped region of the second readout structure, and on a second intermediate doped region of the second readout structure, such that charge carriers (CCSP) of the second polarity are forced to move from the Ge photosensitive region toward the second readout structure of the plurality of readout structures by a second tensile force, wherein the charge carriers (CCSP) of the second polarity are collected in the second readout structure via a second readout electrode electrically coupled to the second remote doped region; A step of maintaining a voltage for the second sampling duration on the plurality of doped regions of the second group of the plurality of readout structures, such that a tensile force applied to the charge carriers of the second polarity toward each of the plurality of remote doped regions of the second group of the plurality of readout structures other than the second readout structure is less than half of the second tensile force; A step of maintaining a relative voltage on the Ge photosensitive region, on the first remote doping region, and on the first intermediate doping region for a third sampling duration after the second sampling duration, so that the charge carriers (CCSP) of the second polarity are forced to move from the Ge photosensitive region toward the first readout structure by a third tensile force, where the charge carriers (CCSP) of the second polarity are collected through the first readout electrode in the first readout structure; and, A step of maintaining a voltage on the plurality of doping regions of the first group of the plurality of readout structures for the third sampling duration, such that the tensile force applied to the charge carriers of the second polarity toward each of the plurality of remote doping regions of the first group of the plurality of readout structures is less than half of the third tensile force A method comprising the above steps. **Claim 7** The method according to claim 6, wherein the first voltage applied to the first intermediate doping region during the first sampling duration is at least 10 times the voltage applied to any intermediate doping region of the first group of the plurality of readout structures averaged over the first sampling duration. **Claim 8** The method according to claim 6 or 7, which is simultaneously performed on a plurality of photosites. **Claim 9** The method according to claim 6 or 7, further comprising a step of providing a voltage to a plurality of regions of the photosite during a discard duration, such that the charge carriers of the second polarity are driven toward the electrode through which the charge carriers are disposed from the photosite without being read.

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