Substrate processing device, susceptor, and substrate processing method

Abstract

To provide a substrate processing device and a susceptor that can be used in a previous process of a semiconductor performed under reduced pressure, and can handle large-heat-quantity processes at extremely low temperatures by reducing the thermal resistance between a substrate mounting surface of the susceptor and a substrate.SOLUTION: A substrate processing device 100 comprises: a reduced-pressure container 110; a susceptor 200 which is installed in the reduced-pressure container 110, and has a flat cooling plate 210 and an electrical insulation layer 220 disposed on the cooling plate 210; medium supply means 120 which supplies, to a substrate mounting surface 222 of the electrical insulation layer 220, a medium that undergoes a phase transition from liquid to solid within a predetermined temperature range at or below 0°C; and an electrode or a discharge antenna 130 which is provided at a position facing the substrate mounting surface 222. At least one of the electrode or discharge antenna 130 and the cooling plate 210 is connected to a high-frequency power supply, and the substrate processing device processes a substrate fixed to the substrate mounting surface 222 via the medium.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, a susceptor used therein, and a substrate processing method.

Background Art

[0002] In semiconductor manufacturing processes, particularly in pre-processes such as dry etching processes performed under reduced pressure, it may be required to maintain the substrate temperature at an extremely low temperature (0°C or lower). In recent years, the process has been made more power-intensive, and accordingly, it has been required to efficiently absorb a large amount of heat passing through the substrate.

[0003] Patent Document 1 discloses a dicing apparatus and a dicing method for a workpiece, which include a liquid that penetrates into uneven portions on the surface, a liquid application means for applying the liquid to the upper surface of the workpiece, a freezing means for freezing the workpiece coated with the liquid and solidifying the liquid on the workpiece, a dicing table on which the workpiece is placed, a blade for dicing the workpiece while embedding the unevenness formed by a low dielectric film or a metal film on the workpiece surface with a solidified body, and a solidified body melting means for melting the solidified body on the workpiece after dicing.

[0004] Patent Document 2 discloses an electrostatic chuck device that uses an insulating viscous fluid or a low-hardness gel-like substance as at least a first electrical insulating layer for the insulating layer of the electrostatic chuck. Patent Document 2 further discloses covering the exposed surface of the electrical insulating layer with a second electrical insulating layer having corrosion resistance, disposing a third electrical insulating layer made of a highly insulating material between the first insulating layer and a metal insulating layer support plate, embedding the electrode inside the first insulating layer, and fixing it to the lower surface of the second insulating layer or the upper surface of the third insulating layer.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0006] In order to remove a large amount of heat from a susceptor with a cooling plate disposed below a substrate while maintaining the substrate at a temperature below a certain level, means for reducing the thermal resistance between the susceptor and the cooling plate and between the refrigerant flow path in the cooling plate and the refrigerant have been studied. For example, regarding the space between the susceptor and the cooling plate, integration is performed via a high thermal conductivity joint (adhesive) to reduce the thermal resistance, and regarding the space between the refrigerant flow path and the refrigerant, the shape and pattern of the refrigerant flow path, the type of refrigerant, the temperature, and the flow rate have been adjusted.

[0007] However, regarding the thermal resistance between the substrate and the susceptor, although means for increasing heat transfer by applying an adsorption force between the substrate and the susceptor and interposing a gas between the substrate and the susceptor have been developed, since the substrate is only in contact with the substrate mounting surface of the susceptor, there is a limit to reducing the thermal resistance.

[0008] The present invention has been made in view of such circumstances, and an object thereof is to provide a substrate processing apparatus and a susceptor that can be used in a pre-process of a semiconductor performed under reduced pressure, can reduce the thermal resistance between the substrate mounting surface of the susceptor and the substrate, and can cope with a large amount of heat process at an extremely low temperature.

Means for Solving the Problems

[0009] (1) To achieve the above object, the present invention has taken the following means. That is, the substrate processing apparatus of the application example of the present invention includes a decompression vessel, a susceptor installed in the decompression vessel and having a flat cooling plate and an electrical insulation layer disposed on the cooling plate, a medium supply means for supplying a medium that undergoes a phase transition from a liquid to a solid within a predetermined temperature range of 0 °C or lower to the substrate placement surface of the electrical insulation layer, and an electrode or a discharge antenna provided at a position facing the substrate placement surface. At least one of the electrode or the discharge antenna or the cooling plate is connected to a high-frequency power source, and it is characterized in that the substrate fixed to the substrate placement surface through the medium is processed.

[0010] In this way, by fixing the substrate to the substrate placement surface of the susceptor with a solid, the thermal resistance between the substrate and the susceptor can be made smaller than before even in a process using a high-frequency power source, and a large amount of heat can be transferred to the susceptor side while maintaining the temperature of the substrate below a certain temperature. Also, since the medium is in a liquid state when placing the substrate, self-alignment by the medium (plane correction by the meniscus force) can be expected. Further, in the process within the decompression vessel, it becomes possible to place, fix, and plane-correct the substrate without the conventional electrostatic adsorption function or vacuum adsorption function.

[0011] (2) Further, in the substrate processing apparatus of the application example of (1) above, the medium is characterized in that it is water or a mixture of water and alcohol. This makes it easy to maintain an extremely low temperature of 0 °C or lower.

[0012] (3) Further, in the substrate processing apparatus of the application example of (1) or (2) above, the medium supply means is characterized in that it is a medium supply hole provided in the susceptor and opening to the substrate placement surface. By providing the medium supply means on the susceptor side in this way, the configuration of the substrate processing apparatus can be simplified.

[0013] (4) Further, in the substrate processing apparatus according to any one of the application examples (1) to (3) above, the susceptor is characterized in that it has exhaust holes that open to the substrate placement surface and suck the medium or adsorb the substrate. Thereby, the medium between the substrate and the substrate placement surface can be thinned, and the thermal resistance during substrate processing can be made smaller. Also, a warped substrate can be adsorbed.

[0014] (5) Further, in the substrate processing apparatus according to any one of the application examples (1) to (4) above, the electrical insulating layer is characterized in that at least a part of the substrate placement surface is formed of a porous body. Thereby, the medium supply means provided on the susceptor side can be made simpler.

[0015] (6) Further, in the substrate processing apparatus according to any one of the application examples (1) to (5) above, the cooling plate is characterized by being made of metal, ceramics, or a composite material thereof. Thereby, it becomes easy to provide structures such as a refrigerant flow path, a medium supply hole, and an exhaust hole inside the cooling plate.

[0016] (7) Further, in the substrate processing apparatus according to any one of the application examples (1) to (6) above, the electrical insulating layer is characterized by being made of a ceramic sprayed film, a ceramic sintered body, or an organic film. Thereby, a dense electrical insulating layer can be formed, and the thermal resistance can be made smaller.

[0017] (8) Further, in the substrate processing apparatus according to any one of the application examples (1) to (7) above, a bonding layer is provided between the cooling plate and the electrical insulating layer, and the cooling plate and the electrical insulating layer are bonded via the bonding layer. Thereby, the bonding layer can be provided according to the CTE difference between the cooling plate and the electrical insulating layer, the thermal resistance between the cooling plate and the electrical insulating layer can be made smaller, and the bonding reliability can be enhanced even when the CTE difference between the cooling plate and the electrical insulating layer is large.

[0018] (9) Further, in the substrate processing apparatus according to any one of the application examples (1) to (8) above, the susceptor is characterized by including a heater. Thereby, it becomes easy to melt the medium that has undergone a phase transition after the process is completed, and it becomes easy to detach and convey the substrate from the substrate placement surface of the susceptor.

[0019] (10) Further, in the substrate processing apparatus according to any one of the application examples (1) to (9) above, the substrate processing apparatus is characterized by being a dry etching apparatus. Since the substrate processing apparatus of the present invention can transfer a large amount of heat to the susceptor side while maintaining the temperature of the substrate below a certain temperature, it is suitable for a dry etching apparatus.

[0020] (11) Further, the susceptor according to the application example of the present invention includes the flat cooling plate connected to the high-frequency power supply or the ground, and the electrical insulating layer disposed on the cooling plate and having the substrate placement surface, and is characterized by being used in the substrate processing apparatus according to the application example of (1) above.

[0021] In this way, by fixing the substrate to the substrate placement surface of the susceptor with a solid, the thermal resistance between the substrate and the susceptor can be made smaller than before even in a process using a high-frequency power supply, and a large amount of heat can be transferred to the susceptor side while maintaining the temperature of the substrate below a certain temperature. Also, since the medium is in a liquid state when placing the substrate, self-alignment by the medium (plane correction by the meniscus force) can be expected. Further, in the process inside the vacuum chamber, it becomes possible to place, fix, and plane-correct the substrate without having the conventional electrostatic adsorption function or vacuum adsorption function.

[0022] (12) Further, in the susceptor according to the application example of (11) above, it is characterized by including a medium supply hole that opens to the substrate placement surface and supplies the medium. In this way, by providing the medium supply means on the susceptor side, the configuration of the substrate processing apparatus can be simplified.

[0023] (13) Further, in the susceptor of the application example of (11) or (12) above, it is characterized in that exhaust holes are provided which open on the substrate mounting surface and suck the medium or adsorb the substrate. Thereby, the medium between the substrate and the substrate mounting surface can be thinned, and the thermal resistance during substrate processing can be made smaller. Also, a warped substrate can be adsorbed.

[0024] (14) Further, in the susceptor of any one of the application examples from (11) to (13) above, the electrical insulating layer is characterized in that at least a part of the substrate mounting surface is formed of a porous body. Thereby, the medium supply means provided on the susceptor side can be made simpler.

[0025] (15) Further, in the susceptor of any one of the application examples from (11) to (14) above, the cooling plate is characterized by being made of metal, ceramics, or a composite material thereof. Thereby, it becomes easy to provide structures such as a refrigerant flow path, a medium supply hole, and an exhaust hole inside the cooling plate.

[0026] (16) Further, in the susceptor of any one of the application examples from (11) to (15) above, the electrical insulating layer is characterized by being made of a ceramic sprayed film, a ceramic sintered body, or an organic film. Thereby, a dense electrical insulating layer can be formed and the thermal resistance can be made smaller.

[0027] (17) Further, in the susceptor of any one of the application examples from (11) to (16) above, a bonding layer is provided between the cooling plate and the electrical insulating layer, and the cooling plate and the electrical insulating layer are bonded via the bonding layer. Thereby, the bonding layer can be provided according to the CTE difference between the cooling plate and the electrical insulating layer, the thermal resistance between the cooling plate and the electrical insulating layer can be made smaller, and the bonding reliability can be enhanced even when the CTE difference between the cooling plate and the electrical insulating layer is large.

[0028] (18) Further, in the susceptor of any of the application examples (11) to (17) above, it is characterized by further including a heater. Thereby, it becomes easy to melt the medium that has undergone a phase transition after the process is completed, and it becomes easy to remove and convey the substrate from the substrate placement surface of the susceptor.

[0029] (19) Further, the substrate processing method of the application example of the present invention is a substrate processing method, including a step of supplying a medium that undergoes a phase transition from a liquid to a solid within a predetermined temperature range of 0°C or lower onto the substrate placement surface of a susceptor in a decompression vessel; a step of placing a substrate on the substrate placement surface onto which the medium has been supplied; a step of cooling the substrate placement surface to a temperature equal to or lower than the predetermined temperature range, causing the medium to undergo a phase transition, and fixing the substrate to the substrate placement surface via the medium; a step of decompressing the decompression vessel; and a step of processing the substrate.

[0030] In this way, by firmly fixing the substrate to the substrate placement surface of the susceptor using a solid, the thermal resistance between the substrate and the susceptor can be made smaller than before, and a large amount of heat can be transferred to the susceptor side while maintaining the temperature of the substrate below a certain temperature. Also, since the medium is in a liquid state when the substrate is placed, self-alignment (planar correction by the meniscus force) by the medium can be expected. Further, in the process within the decompression vessel, it becomes possible to place, fix, and planar correct the substrate without having the conventional electrostatic adsorption function or vacuum adsorption function.

Advantages of the Invention

[0031] According to the substrate processing apparatus, susceptor, or substrate processing method of the present invention, the thermal resistance between the substrate and the susceptor can be made smaller than before, and a large amount of heat can be transferred to the susceptor side while maintaining the temperature of the substrate below a certain temperature. Also, since the medium is in a liquid state when the substrate is placed, self-alignment (planar correction by the meniscus force) by the medium can be expected. Further, in the process within the decompression vessel, it becomes possible to place, fix, and planar correct the substrate without having the conventional electrostatic adsorption function or vacuum adsorption function.

Brief Description of the Drawings

[0032]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

[0033] Next, embodiments of the present invention will be described with reference to the drawings. For ease of understanding of the description, the same reference numerals are given to the same components in each drawing, and duplicate descriptions are omitted. In the configuration diagrams, the sizes of the respective components are conceptually represented and do not necessarily represent actual dimensional ratios.

[0034] [Embodiment] (Configuration of Substrate Processing Apparatus) The substrate processing apparatus according to an embodiment of the present invention will be described with reference to FIG. 1. FIG. 1 is a schematic cross-sectional view showing an example of the substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus 100 according to an embodiment of the present invention includes a decompression vessel 110, a medium supply means 120, an electrode or a discharge antenna 130, and a susceptor 200.

[0035] The vacuum chamber 110 is a common vacuum chamber that constitutes a plasma etching, CVD, sputtering apparatus, etc. The vacuum chamber 110 has a chamber 112, an exhaust device 114, and a gas supply system 116.

[0036] The chamber 112 is a sealable container that maintains an air pressure difference with the outside. The chamber 112 has feedthroughs for high-frequency power supply, grounding, other electrical connections, exhaust, gas supply, medium supply, etc.

[0037] The exhaust device 114 evacuates and reduces the pressure of the gas in the chamber 112. Further, the exhaust device 114 supplies a purge gas into the chamber 112 to restore the air pressure in the chamber 112. The exhaust device 114 can also discharge liquids. The exhaust device 114 is connected to the inside of the chamber 112 via a feedthrough.

[0038] The gas supply system 116 supplies gases for plasma etching, CVD, sputtering, etc. The gas supply system 116 is connected to the inside of the chamber 112 via a feedthrough. The configuration of the gas supply system 116 varies depending on the configuration of the substrate processing apparatus 100. For example, a shower head for gas supply may be provided.

[0039] The medium supply means 120 supplies a medium that undergoes a phase transition from a liquid to a solid within a predetermined temperature range of 0°C or lower to the substrate mounting surface 222 of the electrical insulation layer 220 of the susceptor 200 described later. The medium supply means 120 can be configured, for example, as a mechanism that sprays or drops the medium onto the substrate mounting surface 222 of the susceptor 200. The medium supply means 120 is connected to a medium supply device 122 provided outside the chamber 112 via a feedthrough. The number of the medium supply means 120 may be 1 or 2 or more according to the design of the substrate processing apparatus 100.

[0040] The medium can be water, a monohydric to trihydric alcohol or a mixture thereof, or other substances having a phase transition temperature (freezing point temperature) of 0°C or lower. The medium is preferably water or a mixture of water and alcohol. This makes it easy to maintain an extremely low temperature of 0°C or lower. Also, when the cooling plate 210 is made of an Al alloy, the influence of corrosion can be suppressed if the water contains a certain amount of alcohol. It is preferable to use ultrapure water as the water. As the alcohol, for example, ethanol can be used as a monohydric alcohol, ethylene glycol as a dihydric alcohol, and glycerin as a trihydric alcohol. In addition to the above, the medium may be a solution of water and calcium chloride, or a compound such as amines or ketones.

[0041] The electrode or the discharge antenna 130 is connected to an external high-frequency power source or ground of the substrate processing apparatus 100 via a feed-through. The electrode or the discharge antenna 130 can have a shape according to the design of the substrate processing apparatus 100. The electrode or the discharge antenna 130 is preferably made of metal or conductive ceramics, or metal or conductive ceramics whose surface is covered with an electrical insulation layer.

[0042] FIG. 2 is a schematic cross-sectional view showing a modified example of the substrate processing apparatus according to an embodiment of the present invention. As shown in FIG. 2, the medium supply means 120 is preferably provided in the susceptor 200 and is a medium supply hole 224 that opens to the substrate mounting surface 222. This can simplify the configuration of the substrate processing apparatus 100. Details will be described later.

[0043] The substrate processing apparatus 100 is preferably a dry etching apparatus. Since the substrate processing apparatus 100 of the present invention can transfer a large amount of heat to the susceptor 200 side while maintaining the temperature of the substrate at a constant temperature or lower, for example, 0°C or lower, it is suitable for a highly directional dry etching process.

[0044] (Configuration of susceptor) The susceptor according to an embodiment of the present invention will be described with reference to FIG. 3. FIG. 3 is a schematic cross-sectional view showing an example of the susceptor according to an embodiment of the present invention. The susceptor 200 according to an embodiment of the present invention includes a cooling plate 210 and an electrical insulation layer 220. The susceptor 200 according to an embodiment of the present invention is used in the above-described substrate processing apparatus 100.

[0045] The cooling plate 210 is connected to a high-frequency power source or ground outside the substrate processing apparatus 100 via a feed-through. At least one of the electrode or discharge antenna 130 or the cooling plate 210 is connected to the high-frequency power source. Thereby, processes such as plasma etching, CVD, and sputtering can be performed. Both the electrode or discharge antenna 130 and the cooling plate 210 may be connected to the high-frequency power source.

[0046] The cooling plate 210 is preferably made of metal, ceramics, or a composite material thereof. This makes it easy to provide structures such as a refrigerant flow path 212 inside the cooling plate 210, a medium flow path 214 communicating with a medium supply hole 224 described later, and a discharge flow path 216 communicating with an exhaust hole 226 described later.

[0047] When the cooling plate 210 is formed of ceramics, its material is preferably a ceramic sintered body mainly composed of SiC or AlN. The term "mainly composed of SiC" refers to a ceramic sintered body containing 50 wt% or more of SiC, or a ceramic sintered body containing SiC and having a thermal conductivity of 70 W / mK or more. The term "mainly composed of AlN" refers to a ceramic sintered body containing 50 wt% or more of AlN. Since these have a small CTE difference from the electrical insulation layer 220 disposed on the upper surface of the cooling plate 210, peeling and warping between the cooling plate 210 and the electrical insulation layer 220 are suppressed against the large amount of heat input from the process, and a stable structure can be obtained. Further, for SiC, an aqueous medium can be used as the refrigerant. The aqueous medium has a large heat transfer rate and is suitable for absorbing a large amount of heat. The cooling plate 210 may have various shapes such as a substantially cylindrical shape, a polygonal columnar shape, or an elliptical columnar shape according to the shape of the substrate placement surface 222 of the electrical insulation layer 220.

[0048] The cooling plate 210 preferably has a refrigerant flow path 212 inside. Thereby, heat can be absorbed from the substrate by the refrigerant in the refrigerant flow path 212. The cooling function of the cooling plate 210 may be other than by the refrigerant.

[0049] When the cooling plate 210 has the refrigerant flow path 212, the refrigerant flow path 212 may be formed in a tubular shape. At this time, the width of the refrigerant flow path 212 is preferably 1 mm or more and 60 mm or less. The cross-sectional shape of the refrigerant flow path 212 is not limited to a rectangle, and may be any manufacturable shape such as a circular shape, an elliptical shape, a semi-circular shape, or a stepped shape. The refrigerant flow path 212 is preferably a system in which a low-temperature chiller circulates. Therefore, the refrigerant flow path 212 preferably has an inlet for introducing the chiller and an outlet for discharging the chiller formed therein. At this time, the refrigerant flow path 212 is connected to a chiller unit 240 provided outside the chamber 112 via a feed-through.

[0050] The refrigerant flow path 212 may have a shape as viewed through the upper surface of the cooling plate 210 and may include a substantially annular shape or a substantially spiral shape centered on the center of the cooling plate 210. The substantially annular shape includes a shape in which a part of the circular arc of the annular shape is not connected and a normal annular shape. The substantially spiral shape includes a shape in which the circular arc shape that circulates is connected with its curvature changing in the radial direction with respect to the center of the cooling plate 210.

[0051] The refrigerant flow path 212 may be arranged concentrically with the center of the cooling plate 210 in a shape as viewed through the upper surface of the cooling plate 210. The substantially annular refrigerant flow path 212 arranged concentrically may be double or triple or more. The substantially annular refrigerant flow path 212 arranged concentrically may communicate inside the cooling plate 210, or may each have an inlet and an outlet formed therein.

[0052] When the cooling plate 210 is formed of a ceramic sintered body, the width of the gap between adjacent refrigerant flow paths 212 (the width of the cooling plate 210 present in the gap between adjacent refrigerant flow paths 212) is preferably 2 mm or more. Further, the width of the gap between adjacent refrigerant flow paths 212 is preferably 25% or more of the width of the refrigerant flow path 212. Thereby, even when the refrigerant flow path 212 is formed inside the cooling plate 210, the strength of the cooling plate 210 can be maintained.

[0053] The refrigerant flow path 212 may include a linear shape. Further, a substantially annular refrigerant flow path 212 and a linear refrigerant flow path 212 may be combined. The substantially annular refrigerant flow path 212 and the linear refrigerant flow path 212 may communicate with each other.

[0054] The electrical insulating layer 220 is disposed on the cooling plate 210 and has a substrate mounting surface 222. A substrate is mounted on the substrate mounting surface 222.

[0055] The electrical insulating layer 220 is preferably made of a ceramic sprayed film, a ceramic sintered body, or an organic film. Thereby, a dense electrical insulating layer 220 can be formed and the thermal resistance can be reduced.

[0056] When the electrical insulating layer 220 is formed of a ceramic sprayed film or a ceramic sintered body, its material is preferably a ceramic mainly composed of Al2O3 or AlN. The main component means containing 50 wt% or more. When the electrical insulating layer 220 is formed of an organic film, its material is preferably a fluororesin such as PTFE (Poly Tetra Fluoro Ethylene) or polyimide.

[0057] When the electrical insulating layer 220 is formed of a ceramic sprayed film, the thickness of the electrical insulating layer 220 is preferably 0.1 mm or more and 2 mm or less. When the electrical insulating layer 220 is formed of a ceramic sintered body, the thickness of the electrical insulating layer 220 is preferably 0.1 mm or more and 5 mm or less. When the electrical insulating layer 220 is formed of an organic film, the thickness of the electrical insulating layer 220 is preferably 0.05 mm or more and 1 mm or less.

[0058] The electrical insulation layer 220 preferably has an exhaust hole 226 that opens to the substrate mounting surface 222 and sucks the medium or adsorbs the substrate. Thereby, the medium between the substrate and the substrate mounting surface 222 can be thinned, and the thermal resistance during substrate processing can be made smaller. Also, a warped substrate can be adsorbed. The exhaust hole 226 is connected to an exhaust device 114 provided outside the chamber 112 via a feed-through. The exhaust hole 226 may communicate with a discharge channel 216 formed in the cooling plate 210 and be connected to the exhaust device 114 via a feed-through. The number of the exhaust holes 226 may be 1 or 2 or more according to the design of the substrate processing apparatus 100.

[0059] The amount of heat transferred to the susceptor 200 conducts heat inside the susceptor 200. Therefore, the thermal conductivity of the cooling plate 210 is preferably 25 W / mK or more, more preferably 70 W / mK or more, and even more preferably 100 W / mK or more in the case of a ceramic sintered body. Also, the thermal conductivity of the electrical insulation layer 220 is preferably 4 W / mK or more in the case of a ceramic sprayed film. In the case of a ceramic sintered body, it is preferably 25 W / mK or more, more preferably 70 W / mK or more, and even more preferably 100 W / mK or more. In the case of an organic film, it is preferably 0.1 W / mK or more.

[0060] FIG. 4 is a schematic cross-sectional view showing a modified example of the susceptor according to an embodiment of the present invention. As shown in FIG. 4, the electrical insulation layer 220 preferably has a medium supply hole 224 that opens to the substrate mounting surface 222 and supplies a medium. When the susceptor 200 having this configuration is used in the substrate processing apparatus 100, the medium supply hole 224 corresponds to the medium supply means 120 of the substrate processing apparatus 100. Thereby, the configuration of the substrate processing apparatus 100 can be simplified. The medium supply hole 224 is connected to a medium supply device 122 provided outside the chamber 112 via a feed-through. The medium supply hole 224 may communicate with a medium flow path 214 formed in the cooling plate 210 and be connected to the medium supply device 122 via a feed-through. The number of the medium supply holes 224 may be 1 or 2 or more according to the design of the substrate processing apparatus 100.

[0061] As shown in FIG. 4, it is preferable that a bonding layer 230 is provided between the cooling plate 210 and the electrical insulation layer 220, and the cooling plate 210 and the electrical insulation layer 220 are bonded via the bonding layer 230. Thereby, the bonding layer 230 can be provided according to the CTE difference between the cooling plate 210 and the electrical insulation layer 220, the thermal resistance between the cooling plate and the electrical insulation layer can be reduced, and even when the CTE difference between the cooling plate 210 and the electrical insulation layer 220 is large, the bonding reliability can be enhanced. In addition, the degree of freedom in selecting the materials of the cooling plate 210 and the electrical insulation layer 220 is increased.

[0062] The bonding layer 230 is preferably formed of a brazing material containing a metal such as In, Al, or Au, an inorganic adhesive, or an organic adhesive. Further, when an adhesive is used, it is preferable that a filler for enhancing thermal conductivity is added to the adhesive. The thermal conductivity of the bonding layer 230 is preferably 0.4 W / mK or more. Also, the elongation of the bonding layer 230 is preferably 100% or more. The thickness of the bonding layer 230 is preferably 100 μm or less, more preferably 70 μm or less, and even more preferably 50 μm or less. Thereby, a large amount of heat can be transferred. When the thickness is more than 100 μm, the thermal resistance of the bonding layer 230 may become non-negligible even when a metal or an adhesive having high thermal conductivity is used. The lower limit of the thickness of the bonding layer 230 can be, for example, 10 μm or more. This is because it becomes difficult to control the thickness if it is thinner than this.

[0063] FIG. 5 is a schematic cross-sectional view showing a modified example of the susceptor according to an embodiment of the present invention. As shown in FIG. 5, in the electrical insulating layer 220, at least a part of the substrate mounting surface 222 is preferably formed of a porous body 228. Thereby, the medium supply means 120 provided on the susceptor 200 side can be made simpler. The porous body 228 has communication holes of a size through which a liquid medium can easily pass, and the opening on the substrate mounting surface 222 side of the communication holes serves as a medium supply hole 224. Thereby, the entire surface of the substrate mounting surface 222 can be wetted with the liquid medium.

[0064] FIG. 6 is a schematic cross-sectional view showing a modified example of the susceptor according to an embodiment of the present invention. As shown in FIG. 6, the susceptor 200 preferably further includes a heater 250. Thereby, it becomes easy to melt the medium that has undergone a phase transition after the process is completed, and it becomes easy to detach and convey the substrate from the substrate mounting surface 222 of the susceptor 200. Note that the terminals and terminal holes in FIG. 6 are omitted.

[0065] The heater 250 may be embedded in the electrical insulation layer 220, may be disposed between the cooling plate 210 and the electrical insulation layer 220, or may be embedded in the cooling plate 210. When the heater 250 is disposed between the cooling plate 210 and the electrical insulation layer 220, the heater 250 is disposed in an electrically insulated manner. In this case, bonding layers 230 are preferably provided and bonded between the cooling plate 210 and the heater 250, and between the heater 250 and the electrical insulation layer 220, respectively. The heater 250 can have a shape according to the design of the substrate processing apparatus 100 or the susceptor 200. The heater 250 preferably consists of W, Mo, or an alloy having these as main components.

[0066] The susceptor 200 may be provided with terminals, terminal holes, and lift pin holes as required.

[0067] The electrical insulation layer 220 made of a ceramic sprayed film can be directly formed on the cooling plate 210. Since there is no bonding layer 230, the thermal resistance between the cooling plate 210 and the electrical insulation layer 220 can be reduced. As such a combination, for example, a susceptor 200 including a cooling plate 210 made of an Al alloy and an electrical insulation layer 220 made of an Al2O3 sprayed film formed by APS spraying is suitable.

[0068] The electrical insulation layer 220 made of a ceramic sintered body has a small CTE difference from the cooling plate 210 using a ceramic sintered body, and a material with high thermal conductivity can be selected. In such a case, the thermal resistance between the cooling plate 210 and the electrical insulation layer 220 can be reduced. As such a combination, for example, a susceptor 200 in which a cooling plate 210 made of an SiC ceramic sintered body and an electrical insulation layer 220 made of an Al2O3 ceramic sintered body are joined by an In bonding layer 230 is suitable. Also, when the CTE difference between the electrical insulation layer 220 made of a ceramic sintered body and the cooling plate 210 using a ceramic sintered body is sufficiently small, they may be joined by direct bonding.

[0069] The electric insulation layer 220 made of a ceramic sintered body can easily incorporate a heater 250 inside the electric insulation layer 220, so that a susceptor 200 with a heater 250 can be configured. As such a combination, for example, a susceptor 200 in which a cooling plate 210 made of a SiC ceramic sintered body and an electric insulation layer 220 with a heater 250 incorporated therein in an AlN ceramic sintered body are joined by an In-made joining layer 230 is suitable.

[0070] Since a part of the electric insulation layer 220 made of a ceramic sintered body can easily be made into a porous body, a susceptor 200 with the porous body as a medium supply hole can be configured. As such a combination, for example, a susceptor 200 in which a cooling plate 210 made of a SiC ceramic sintered body and an electric insulation layer 220 with a porous ceramic sintered body formed on the upper surface of the ceramic sintered body are joined by an In-made joining layer 230 is suitable.

[0071] [Substrate Processing Method] Next, an example of the substrate processing method of the present invention will be described. FIG. 7 is a flowchart showing an example of the substrate processing method of the present invention. In the preparation stage of the substrate processing method of the present invention, a connection is made between an electrode, a discharge antenna, or a susceptor provided at a position facing the substrate placement surface and a high-frequency power supply or ground. The connection with the high-frequency power supply or ground may be made at any stage before substrate processing. Next, a medium that undergoes a phase transition from a liquid to a solid within a predetermined temperature range of 0° C. or lower is supplied onto the substrate placement surface of the susceptor in the decompression vessel (step S1). The supply of the medium is performed by a medium supply means. The medium is preferably water or a mixture of water and alcohol.

[0072] Next, a substrate is placed on the substrate placement surface onto which the medium has been supplied (step S2). In this way, since the medium is in a liquid state when the substrate is placed, self-alignment (planar correction by the meniscus force) by the medium can be expected. The thickness of the medium after the substrate is placed is preferably made thin from the viewpoint of thermal resistance, and for example, it is preferably 10 μm or less. Therefore, a step of adjusting the medium supply amount according to the area of the substrate or the like may be provided in order to make the thickness of the medium thin.

[0073] In addition, in the case of a configuration in which an exhaust hole is provided in the substrate mounting surface of the susceptor, it is preferable to include a step of sucking the medium or adsorbing the substrate after step S2. Thereby, the medium between the substrate and the substrate mounting surface can be thinned, and the thermal resistance during substrate processing can be made smaller. In addition, a warped substrate can also be adsorbed.

[0074] Next, the substrate mounting surface is cooled to a predetermined temperature range or lower, the medium is phase-transitioned, and the substrate is fixed to the substrate mounting surface via the medium (step S3). Next, the pressure in the decompression vessel is reduced (step S4). Step S3 and step S4 may be performed in either order. They may also be performed simultaneously. Thereby, the medium on the substrate mounting surface solidifies (phase-transition), and the susceptor and the substrate are integrated. Therefore, in the process in the decompression vessel, it becomes possible to mount, fix, and planar correct the substrate without having the conventional electrostatic adsorption function or vacuum adsorption function.

[0075] At this time, the heat transfer between the substrate and the susceptor is governed by the heat conduction of the solid of the solidified product. Therefore, compared with the heat transfer by mere contact for close adhesion as in the prior art or the heat transfer by gas heat transfer between the substrate and the susceptor, the thermal resistance between the substrate and the susceptor can be reduced. As a result, even if a large amount of heat passes, the temperature difference between the refrigerant temperature and the substrate can be made small, and the substrate temperature can be maintained below a certain temperature. For example, when water is used as the medium, it can be maintained at an extremely low temperature of 0°C or lower.

[0076] Then, the substrate is processed (step S5). Thereby, the process can be performed while stably maintaining the temperature of the substrate at an extremely low temperature. In addition, due to the self-alignment by the medium, the process can be performed on a substrate with high flatness.

[0077] After the process is completed, the medium is melted and the substrate is detached and conveyed from the substrate mounting surface of the susceptor. In the case of a configuration in which a heater is provided on the susceptor, it is preferable to melt the medium using the heater. Thereby, it becomes easy to detach and convey the substrate from the substrate mounting surface of the susceptor.

[0078] With such a substrate processing method, the thermal resistance between the substrate and the susceptor can be made smaller than before, and a large amount of heat can be transferred to the susceptor side while maintaining the temperature of the substrate below a certain temperature. In addition, a process can be performed on a substrate with high flatness.

[0079] [Manufacturing method of susceptor] Next, an example of a method for manufacturing a susceptor according to an embodiment of the present invention will be described. Hereinafter, a method for manufacturing a susceptor in the case where the cooling plate is formed of a SiC ceramic sintered body and the electrical insulating layer is formed of an AlN ceramic sintered body will be described.

[0080] (Manufacturing method of cooling plate) The cooling plate of the susceptor according to the embodiment of the present invention is manufactured, for example, by the molded body hot pressing method described below. Note that the manufacturing method of the cooling plate is not limited to this method, and for example, a powder hot pressing method, a conventional green sheet lamination method, or the like may be used. The powder hot pressing method is a method in which a heating resistor or an electrode is embedded inside a ceramic by alternately stacking a ceramic raw material powder and a predetermined heating resistor or electrode, and then uniaxially hot pressing and firing it.

[0081] The manufacturing method of the cooling plate of the susceptor according to the embodiment of the present invention by the molded body hot pressing method includes a ceramic molded body forming step, a ceramic degreased body manufacturing step, a firing step, a ceramic sintered body processing step, a cooling plate precursor joining step, and a cooling plate processing step.

[0082] In the ceramic molded body forming step, for example, a plurality of ceramic molded bodies are formed from a ceramic raw material powder mainly composed of SiC (silicon carbide). A sintering aid may be added as necessary. For example, additives such as B4C, C, a binder, a plasticizer, and a dispersant as a sintering aid are appropriately added to the SiC ceramic raw material powder and mixed to prepare a slurry, and granulated powder is granulated by a spray drying method or the like. Thereafter, the granulated powder can be pressure molded to form a plurality of ceramic molded bodies.

[0083] The SiC ceramic raw material powder preferably has high purity, and its purity is preferably 99% or more, more preferably 99.9% or more. Also, the average particle size of the SiC ceramic raw material powder is preferably 0.1 μm or more and 1.0 μm or less.

[0084] The mixing method can be either wet or dry. For example, mixers such as ball mills and vibration mills can be used. As the molding method, for example, known methods such as uniaxial pressing and cold isostatic pressing (CIP) can be used. Note that the method for forming the ceramic compact is not limited to pressure molding. For example, it can also be applied to green sheet lamination or casting molding, and the ceramic compact can be manufactured through appropriate degreasing or further pre-firing processes.

[0085] After molding, the shape of the ceramic compact may be adjusted by machining. Machining may be performed after degreasing.

[0086] In the process of producing the ceramic degreased body, a plurality of ceramic compacts are degreased at a predetermined temperature or higher for a predetermined time or longer to produce a plurality of ceramic degreased bodies. The ceramic compact is heat-treated, for example, at a temperature of 500 °C or higher and 900 °C or lower to become a ceramic degreased body. The degreasing time is preferably 1 hour or more and 120 hours or less. For degreasing, an air furnace or a nitrogen atmosphere furnace can be used, but an air furnace is preferred for removing the organic components of the binder.

[0087] In the firing process, the formed ceramic degreased body is subjected to uniaxial pressure firing or normal pressure firing to form a plurality of ceramic sintered bodies. When performing uniaxial pressure firing, the pressure applied is preferably 4 MPa or more. Also, the firing temperature is preferably 2000 °C or higher and 2200 °C or lower. The firing time is preferably 1 hour or more and 12 hours or less, and more preferably 1 hour or more and 5 hours or less. The firing atmosphere is, for example, a nitrogen or inert gas atmosphere, but may also be an atmosphere such as a vacuum. Also, it may be an inert gas atmosphere after a vacuum atmosphere. As a result, a plurality of ceramic degreased bodies are sintered respectively to become a plurality of SiC ceramic sintered bodies.

[0088] In the ceramic sintered body processing step, one or more SiC ceramic sintered bodies are each subjected to necessary processing to form one or more cooling plate precursors. The plurality of cooling plate precursors are, for example, a cooling plate precursor that becomes the lid of the refrigerant flow path, a cooling plate precursor in which a part of the refrigerant flow path is formed, and the like. For example, grooves that will become the refrigerant flow path after joining are formed in one or more SiC ceramic sintered bodies. At this time, the refrigerant flow path may be formed by another cooling plate precursor (SiC ceramic sintered body) covering the groove formed in one cooling plate precursor. Also, the refrigerant flow path may be formed by combining the grooves formed in two cooling plate precursors respectively. According to such a method, refrigerant flow paths of various shapes can be formed.

[0089] In the cooling plate precursor joining step, a plurality of cooling plate precursors are joined to produce a cooling plate. For the joining, either a joining method using a joining material or a joining method not using a joining material can be used.

[0090] First, the joining method using a joining material will be described. First, a joining material is prepared, and the joining material is applied to at least one of the end faces on the joining side of the cooling plate precursor. The end face on the joining side of the cooling plate precursor preferably has a surface roughness Ra of 1.6 μm or less, and is more preferably polished to 0.4 μm or less. The thickness of the joining material to be applied is preferably 5 μm or more and 30 μm or less.

[0091] Next, a plurality of cooling plate precursors are arranged and heated while applying pressure in the vertical direction to the upper surface. The pressure applied is preferably 5 kPa or more. Also, the heating temperature is preferably 1500°C or more and 1800°C or less. The heating time is preferably 0.5 hours or more and 5 hours or less. The heating atmosphere is, for example, a nitrogen or inert gas atmosphere, but an atmosphere such as vacuum may also be used. Thereby, a plurality of cooling plate precursors can be joined.

[0092] The joining material may be any material as long as it can join the cooling plate precursors together. For example, it may be a paste of a mixed powder containing at least B4C powder in SiC powder which is the same main component as the cooling plate precursor. Also, it may be a paste containing 90 wt% or more of SiC and containing Si or B as necessary to adjust the temperature at which it becomes a molten liquid during joining. Also, an Au brazing material, a silver brazing material, or an Al foil may be used.

[0093] Next, a joining method without using a joining material will be described. First, a plurality of cooling plate precursors are arranged. The end face on the joining side of the cooling plate precursor is preferably polished so that the surface roughness Ra is 0.1 μm or less. Next, it is heated while applying pressure in the vertical direction to the upper surface. Among the joining conditions, the pressure applied is preferably 4 MPa or more. Also, the heating temperature is preferably 1600°C or more and 2000°C or less. The heating time is preferably 0.5 hours or more and 6 hours or less. The heating atmosphere is, for example, a nitrogen or inert gas atmosphere, but an atmosphere such as vacuum may also be used. Thereby, a plurality of cooling plate precursors can be joined to form a cooling plate having a refrigerant flow path inside.

[0094] In the method described above, the cooling plate precursors were formed of a ceramic sintered body and joined to form a cooling plate, but the cooling plate precursors may be formed of a ceramic green body, joined, and sintered to produce a cooling plate. Also, when the structure such as the refrigerant flow path is simple, a cooling plate can also be produced by processing a ceramic debound body, laminating, and sintering. When the structure such as the refrigerant flow path is complex or when high dimensional accuracy of the refrigerant flow path etc. is required, the method of joining ceramic sintered bodies is more preferable.

[0095] In the cooling plate processing step, the outer shape of the cooling plate is processed. Also, if necessary, drilling is performed for a discharge channel, a medium channel, a terminal hole for connecting a terminal, a through hole, or the like. Drilling for a discharge channel, a medium channel, a terminal hole for connecting a terminal, a through hole, or the like may be performed before the cooling plate precursor bonding step.

[0096] (Method for manufacturing an electrical insulation layer) When forming the electrical insulation layer of the susceptor according to the embodiment of the present invention with a ceramic sintered body, for example, it is manufactured by the molded body hot pressing method described below. Note that the method for manufacturing the electrical insulation layer is not limited to this method, and for example, a powder hot pressing method, a conventional green sheet lamination method, or the like may be used.

[0097] The method for manufacturing the molded body of the electrical insulation layer of the susceptor according to the embodiment of the present invention by the hot pressing method includes a ceramic molded body forming step, a ceramic degreased body manufacturing step, a firing step, and a ceramic sintered body processing step.

[0098] In the ceramic molded body forming step, for example, a plurality of ceramic molded bodies are formed from a ceramic raw material powder mainly composed of AlN (aluminum nitride). A sintering aid may be added as necessary. For example, additives such as Y2O3 as a sintering aid, a binder, a plasticizer, and a dispersant are appropriately added to the AlN ceramic raw material powder and mixed to produce a slurry, and the granulated powder is granulated by a spray drying method or the like. Thereafter, the granulated powder can be pressure molded to form a plurality of ceramic molded bodies.

[0099] The AlN ceramic raw material powder is preferably of high purity, and its purity is preferably 99% or more, more preferably 99.9% or more. Also, the average particle size of the AlN ceramic raw material powder is preferably 0.1 μm or more and 1.0 μm or less.

[0100] When at least a part of the electrical insulating layer is a porous body, for the ceramic green body of the part that becomes a porous body after sintering, prepare a ceramic green body with changed conditions such as using AlN ceramic raw material powder with a large average particle size, adding a pore former, or changing the addition amounts of sintering aids and additives, and sinter it in combination with a normal ceramic green body, whereby at least a part of the electrical insulating layer can be made into a porous body.

[0101] The mixing method and the molding method are the same as those of the above-mentioned SiC ceramics. After molding, the shape of the ceramic green body may be adjusted by machining. When embedding a heater electrode in the electrical insulating layer, grooves having a shape conforming to the shape of the heater electrode may be formed on one side of the ceramic green body (the joint surface with another ceramic green body). Machining may be performed after degreasing.

[0102] In the ceramic degreased body production process, a plurality of ceramic green bodies are degreased at a predetermined temperature or higher for a predetermined time or longer to produce a plurality of ceramic degreased bodies. The conditions of the ceramic degreased body production process are also the same as those of the above-mentioned SiC ceramics.

[0103] When embedding a heater electrode in the electrical insulating layer, prepare a heater electrode processed into a shape according to the design and application of the susceptor. The shape of the heater electrode can be various shapes such as a mesh shape or a foil shape. Also, the material can be various materials such as molybdenum and tungsten. Combine the heater electrode and the plurality of ceramic degreased bodies to form a laminate formed in a flat plate shape with the heater electrode embedded therein.

[0104] In the firing process, the formed ceramic degreased body or laminate is subjected to uniaxial pressure firing or normal pressure firing to form a ceramic sintered body. When performing uniaxial pressure firing, the pressure applied is preferably 1 MPa or more. Also, the firing temperature is preferably 1700°C or higher and 2000°C or lower. The firing time is preferably 1 hour or more and 12 hours or less, and more preferably 1 hour or more and 5 hours or less. The firing atmosphere is, for example, a nitrogen or inert gas atmosphere, but an atmosphere such as a vacuum may also be used. As a result, one or more ceramic degreased bodies are sintered to form an AlN ceramic sintered body.

[0105] In the ceramic sintered body processing step, necessary processing such as external shape processing is performed on the AlN ceramic sintered body to form an electrical insulation layer.

[0106] (Bonding step) In the bonding step, an appropriate bonding method is selected according to the materials and CTE differences of the produced cooling plate and electrical insulation layer, and bonding is performed. The bonding methods include bonding with a brazing material containing a metal such as In, Al, Au, direct bonding, and bonding with an inorganic adhesive or an organic adhesive.

[0107] When bonding with a brazing material, the bonding surfaces of the cooling plate and the electrical insulation layer preferably have a surface roughness Ra of 1.6 μm or less. Then, a brazing material is placed between the bonding surfaces of the cooling plate and the electrical insulation layer, and bonding is performed by heating to the melting point or glass transition point of the brazing material. The brazing material may be a thin film of a metal.

[0108] When performing direct bonding, the bonding surfaces of the cooling plate and the electrical insulation layer preferably have a surface roughness Ra of 0.2 μm or less, and more preferably 0.1 μm or less. Then, the bonding surfaces of the cooling plate and the electrical insulation layer are combined, and bonding is performed by heating to 1500°C or higher while applying a force of 1 MPa or more in a direction perpendicular to the bonding surface.

[0109] When joining with an inorganic adhesive or an organic adhesive, the joint surfaces of the cooling plate and the electrical insulation layer preferably have a surface roughness Ra of 1.6 μm or less. Then, an adhesive is disposed between the joint surfaces of the cooling plate and the electrical insulation layer, and they are joined by heating up to the glass transition point of the adhesive. When using an adhesive, it is preferable that a filler for enhancing thermal conductivity is added to the adhesive.

[0110] In this way, the susceptor according to the embodiment of the present invention can be manufactured.

[0111] As described above, according to the substrate processing apparatus, susceptor, or substrate processing method of the present invention, the thermal resistance between the substrate and the susceptor can be made smaller than before, and a large amount of heat can be transferred to the susceptor side while maintaining the temperature of the substrate below a certain temperature. Further, since the medium is in a liquid state when placing the substrate, self-alignment by the medium (planar correction by the meniscus force) can be expected.

[0112] The present invention is not limited to the above embodiments, and it goes without saying that the present invention extends to various modifications and equivalents included in the spirit and scope of the present invention. Further, the structure, shape, number, position, size, etc. of the components shown in each drawing are for convenience of explanation and can be changed as appropriate.

Explanation of Reference Numerals

[0113] 100 Substrate processing apparatus 110 Vacuum vessel 112 Chamber 114 Exhaust device 116 Gas supply system 120 Medium supply means 122 Medium supply device 130 Electrode or discharge antenna 200 Susceptor 210 Cooling plate 212 Refrigerant flow path 214 Medium flow path 216 Discharge flow path 220 Electrical insulation layer 222 Substrate placement surface 224 Media supply hole 226 Exhaust hole 228 Porous body 230 Bonding layer 240 Chiller unit 250 Heater

Claims

1. A reduced-pressure container, a susceptor installed in the reduced-pressure container, having a flat cooling plate and an electrical insulation layer disposed on the cooling plate, media supply means for supplying a medium that undergoes a phase transition from a liquid to a solid within a predetermined temperature range of 0°C or lower to the substrate placement surface of the electrical insulation layer, an electrode or a discharge antenna provided at a position facing the substrate placement surface, and a substrate processing apparatus, wherein at least one of the electrode or the discharge antenna or the cooling plate is connected to a high-frequency power source, and the substrate fixed to the substrate placement surface through the medium is processed.

2. The substrate processing apparatus according to claim 1, wherein the medium is water or a mixture of water and alcohol.

3. The substrate processing apparatus according to claim 1, wherein the media supply means is a media supply hole provided in the susceptor and opening to the substrate placement surface.

4. The substrate processing apparatus according to claim 1, wherein the susceptor has an exhaust hole that opens to the substrate placement surface and sucks the medium or adsorbs the substrate.

5. The substrate processing apparatus according to claim 3, wherein at least a part of the substrate placement surface of the electrical insulation layer is formed of a porous body.

6. The substrate processing apparatus according to claim 1, wherein the cooling plate is made of metal, ceramics, or a composite material thereof.

7. The substrate processing apparatus according to claim 1, wherein the electrical insulation layer is made of a ceramic sprayed film, a ceramic sintered body, or an organic film.

8. The substrate processing apparatus according to claim 1, wherein a bonding layer is provided between the cooling plate and the electrical insulation layer, and the cooling plate and the electrical insulation layer are bonded through the bonding layer.

9. The substrate processing apparatus according to claim 1, wherein the susceptor includes a heater.

10. The substrate processing apparatus according to any one of claims 1 to 9, wherein the substrate processing apparatus is a dry etching apparatus.

11. The flat cooling plate connected to a high-frequency power source or ground, and the electrical insulation layer disposed on the cooling plate and having the substrate placement surface, and a susceptor, characterized by being used in the substrate processing apparatus of claim 1.

12. The susceptor according to claim 11, characterized by having a media supply hole that opens to the substrate placement surface and supplies the medium.

13. The susceptor according to claim 11, wherein an exhaust hole is provided which opens on the substrate mounting surface and sucks the medium or adsorbs the substrate.

14. The susceptor according to claim 12, wherein at least a part of the substrate mounting surface of the electrical insulating layer is formed of a porous body.

15. The susceptor according to claim 11, wherein the cooling plate is made of metal, ceramics, or a composite material thereof.

16. The susceptor according to claim 11, wherein the electrical insulating layer is made of a ceramic sprayed film, a ceramic sintered body, or an organic film.

17. The susceptor according to claim 11, wherein a bonding layer is provided between the cooling plate and the electrical insulating layer, and the cooling plate and the electrical insulating layer are bonded via the bonding layer.

18. The susceptor according to claim 11, further comprising a heater.

19. A substrate processing method, comprising: a step of supplying a medium that undergoes a phase transition from a liquid to a solid within a predetermined temperature range of 0°C or lower onto a substrate mounting surface of a susceptor in a decompression vessel; a step of placing a substrate on the substrate mounting surface on which the medium has been supplied; a step of cooling the substrate mounting surface to a temperature equal to or lower than the predetermined temperature range to cause the medium to undergo a phase transition and fixing the substrate to the substrate mounting surface via the medium; a step of decompressing the decompression vessel; a step of processing the substrate; The substrate processing method characterized by including the above steps.

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