Dicing die bonding film and method for manufacturing semiconductor device

Abstract

To provide a dicing die bonding film including a die bonding film having a thickness of 10 μm or less, and to improve the severability of the die bonding film in a process of dividing a semiconductor wafer by a method including stretching the dicing die bonding film.SOLUTION: A dicing die bonding film includes a die bonding film and a dicing film having a pressure-sensitive adhesive layer bonded to the die bonding film. The adhesive layer has a thickness of 10 μm or less. The pressure-sensitive adhesive layer has a thickness of less than 10 μm. The dicing film may further include a substrate film, and the pressure-sensitive adhesive layer may be provided on the substrate film.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a dicing die bonding film and a method for manufacturing a semiconductor device using the same.

Background Art

[0002] During the process of dividing a semiconductor wafer by dicing, a dicing die bonding film (semiconductor processing tape) in which a dicing film used to fix the semiconductor wafer and a die bonding film that bonds between chips or between a chip and a substrate are integrated may be used for manufacturing a semiconductor device (for example, Patent Documents 1 and 2). The die bonding film constituting the dicing die bonding film generally has a thickness of about several tens of μm.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] With an increase in the number of chip layers and a thinning of chips in a semiconductor package, the application of an extremely thin die bonding film having a thickness of 10 μm or less is desired. However, when the die bonding film is thinned to a thickness of 10 μm or less, it has become clear that the die bonding film may be difficult to be divided in the process of dividing a semiconductor wafer by a method including stretching the dicing die bonding film. If the die bonding film is not easily divided, it becomes difficult to pick up the chips to which the fragmented die bonding film is attached, which may lead to a decrease in the yield of semiconductor manufacturing.

[0005] One aspect of the present disclosure relates to improving the breakability of a dicing dicing film having a dicing film with a thickness of 10 μm or less in a step of dividing a semiconductor wafer by a method including stretching the dicing film.

Means for Solving the Problems

[0006] One aspect of the present disclosure relates to a dicing dicing film including a dicing film and an adhesive layer bonded to the dicing film. The thickness of the dicing film is 10 μm or less, and the thickness of the adhesive layer is less than 10 μm.

[0007] Another aspect of the present disclosure relates to a method for manufacturing a semiconductor device, including attaching the dicing film of the dicing dicing film to a semiconductor wafer, dividing the semiconductor wafer and the dicing film by a method including stretching the dicing dicing film, thereby forming a chip and a chip with a dicing film having the diced dicing film on the adhesive layer.

[0008] The present disclosure includes the following. [1] A dicing film, A dicing film having an adhesive layer bonded to the dicing film, Comprising, The thickness of the dicing film is 10 μm or less, The thickness of the adhesive layer is less than 10 μm, A dicing dicing film. [2] The dicing die bonding film according to [1], wherein the 30° peel strength of the adhesive layer with respect to the die bonding film is 6.0 N / 25 mm or more. [3] The dicing die bonding film according to [1] or [2], wherein the dicing film further has a base film, and the adhesive layer is provided on the base film. [4] Attaching the die bonding film of the dicing die bonding film according to any one of [1] to [3] to a semiconductor wafer, Dividing the semiconductor wafer and the die bonding film by a method including stretching the dicing die bonding film, thereby forming a chip and a chip with a die bonding film having the die bonding film fragmented on the adhesive layer. A method for manufacturing a semiconductor device, comprising: [5] The method according to [4], wherein the method for dividing the semiconductor wafer and the die bonding film is a stealth dicing method. [Effect of the Invention]

[0009] Regarding a dicing die bonding film having a die bonding film with a thickness of 10 μm or less, the frangibility of the die bonding film in the step of dividing a semiconductor wafer by a method including stretching the dicing die bonding film can be improved. [Brief Description of the Drawings]

[0010]

Figure 1

Figure 2

Figure 3

Mode for Carrying Out the Invention

[0011] The present invention is not limited to the examples described below. In the following description, each component (including steps, etc.) is not essential unless otherwise specified. The sizes of the components in each figure are conceptual, and the relative size relationships between the components are not limited to those shown in each figure. The numerical values and their ranges in the present disclosure do not limit the present invention. The numerical range indicated by "~" in this specification indicates a range including the numerical values described before and after "~" as the minimum value and the maximum value, respectively. In the numerical ranges described step by step in this specification, the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of another numerically described range. In the numerical ranges described in this specification, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.

[0012] In this specification, (meth)acrylate means acrylate or the corresponding methacrylate. The same applies to other similar expressions such as (meth)acryloyl group and (meth)acrylic copolymer. Each component and material exemplified in this specification may be used alone or in combination of two or more, unless otherwise specified.

[0013] FIG. 1(a) is a plan view showing an example of a dicing die bonding film, and FIG. 1(b) is a cross-sectional view taken along line B-B of FIG. 1(a). The dicing die bonding film 10 shown in FIG. 1 is composed of a die bonding film 1 and a dicing film 5 having an adhesive layer 2 bonded to the die bonding film 1. The dicing film 5 has a base film 3, and the adhesive layer 2 is provided on the base film 3. FIG. 1 also shows a semiconductor wafer Wa to which the die bonding film 1 is attached.

[0014] The die bonding film 1 is an adhesive film for bonding a chip to another chip or a substrate, and is sometimes referred to as a die attach film (DAF). The die bonding film 1 illustrated in FIG. 1 has a circular main surface that covers the entire main surface of the semiconductor wafer Wa.

[0015] The die bonding film 1 can have a thickness of 10 μm or less. The thickness of the die bonding film 1 being 10 μm or less is advantageous, for example, for manufacturing a thin semiconductor package having multiple layers of chips. The thickness of the die bonding film 1 may be 9 μm or less, 8 μm or less, or 7 μm or less, and may also be 1 μm or more, 2 μm or more, 3 μm or more, 4 μm or more, or 5 μm or more. The thickness of the die bonding film 1 may be 1 μm or more and 10 μm or less, 9 μm or less, 8 μm or less, or 7 μm or less, may be 2 μm or more and 10 μm or less, 9 μm or less, 8 μm or less, or 7 μm or less, may be 3 μm or more and 10 μm or less, 9 μm or less, 8 μm or less, or 7 μm or less, may be 4 μm or more and 10 μm or less, 9 μm or less, 8 μm or less, or 7 μm or less, and may be 5 μm or more and 10 μm or less, 9 μm or less, 8 μm or less, or 7 μm or less.

[0016] The die bonding film 1 can be a film formed from an adhesive commonly used for chip bonding. The die bonding film 1 may be a thermosetting adhesive. The thermosetting adhesive constituting the die bonding film 1 includes, for example, a high molecular weight resin component and a thermosetting component.

[0017] The high molecular weight resin component that can be included in the die bonding film 1 may include, for example, at least one resin selected from the group consisting of acrylic rubber, polyimide, and phenoxy resin. The high molecular weight resin component may have a reactive group such as an epoxy group. The weight average molecular weight (standard polystyrene conversion value by GPC method) of the high molecular weight resin component may be 100,000 to 3,000,000. The content of the high molecular weight resin component may be 30 to 80 parts by mass with respect to 100 parts by mass of the total mass of the die bonding film 1.

[0018] The thermosetting component that can be included in the die bonding film 1 is a compound having a reactive group that forms a crosslinked structure by self-polymerization and / or reaction with a curing agent. The thermosetting component may include, for example, at least one selected from the group consisting of epoxy resins, bismaleimide resins, triazine resins, and phenol resins. The content of the thermosetting component may be 1 to 30 parts by mass with respect to 100 parts by mass of the die bonding film 1.

[0019] The thermosetting adhesive constituting the die bonding film 1 may contain other components if necessary. Examples of other components include a curing agent that reacts with the thermosetting component, a curing accelerator that promotes the reaction between the thermosetting component and the curing agent, a coupling agent (e.g., a silane coupling agent), and a filler (e.g., silica).

[0020] The dicing film 5 has a base film 3 having a rectangular main surface and an adhesive layer 2 provided on the base film 3. The adhesive layer 2 has a main surface 2a in contact with the base film 3 and a main surface 2b in contact with the die bonding film 1. The main surfaces 2a and 2b of the adhesive layer 2 can be circular surfaces sized to cover the entire main surface of the die bonding film 1.

[0021] The adhesive layer 2 may have a thickness of less than 10 μm. When the thickness of the adhesive layer 2 is less than 10 μm, the dicing film 1 having a thickness of 10 μm or less is particularly easily divided in the process of dividing the semiconductor wafer Wa by a method including stretching the dicing film 10. Generally, when the adhesive layer is thin, the adhesive force tends to decrease, so a thin adhesive layer is predicted to be disadvantageous for holding the chip. However, according to the findings of the present inventors, when the thickness of the dicing film 1 is 10 μm or less, even if the thickness of the adhesive layer 2 is less than 10 μm, scattering of the chips formed by dividing the semiconductor wafer Wa is sufficiently suppressed. From the same viewpoint, the thickness of the adhesive layer 2 may be 9 μm or less, 8 μm or less, 7 μm or less, 6 μm or less, 5 μm or less, 4 μm or less, or 3 μm or less. The thickness of the adhesive layer 2 may be 0.5 μm or more, 1 μm or more, or 2 μm or more. The thickness of the adhesive layer 2 may be 0.5 μm or more and less than 10 μm, 9 μm or less, 8 μm or less, 7 μm or less, 6 μm or less, 5 μm or less, 4 μm or less, or 3 μm or less, may be 1 μm or more and less than 10 μm, 9 μm or less, 8 μm or less, 7 μm or less, 6 μm or less, 5 μm or less, 4 μm or less, or 3 μm or less, or may be 2 μm or more and less than 10 μm, 9 μm or less, 8 μm or less, 7 μm or less, 6 μm or less, 5 μm or less, 4 μm or less, or 3 μm or less.

[0022] The adhesive layer 2 can be a layer formed of an adhesive commonly used in a dicing film. The adhesive constituting the adhesive layer 2 may be a pressure-sensitive adhesive or an ultraviolet curable adhesive. The ultraviolet curable adhesive is an adhesive having a property that its adhesiveness decreases by ultraviolet irradiation. When an ultraviolet curable adhesive is used, for example, before picking up the chip to which the dicing film is attached, the adhesive force of the adhesive layer 2 can be decreased by ultraviolet irradiation.

[0023] The ultraviolet-curable adhesive may contain, for example, an acrylic resin having a (meth)acryloyl group. The acrylic resin may have a hydroxyl group. The acrylic resin is a polymer containing a (meth)acrylate ester as a monomer unit. The ultraviolet-curable adhesive may further contain other components such as a photoinitiator and a crosslinking agent (e.g., a polyisocyanate compound) as necessary. The crosslinking agent is a compound having a reactive group that reacts with the acrylic resin, and examples thereof include polyisocyanate compounds.

[0024] The high peel strength of the adhesive layer 2 with respect to the die bonding film 1 contributes to suppressing the scattering of the chips and suppressing the peeling of the die bonding film 1 from the adhesive layer 2 in the process of forming chips by dividing the semiconductor wafer Wa. From such a viewpoint, for example, the 30° peel strength of the adhesive layer 2 with respect to the die bonding film 1 may be 6.0 N / 25 mm or more. The 30° peel strength is the peel strength obtained from the stress when the adhesive layer 2 is peeled off in a direction of 30° with respect to the main surface of the die bonding film 1. Details of the method for measuring the 30° peel strength will be described in the examples below. When the adhesive layer 2 is formed of an ultraviolet-curable adhesive, the 30° peel strength of the adhesive layer 2 with respect to the die bonding film 1 before ultraviolet irradiation may be 6.0 N / 25 mm or more. The 30° peel strength (the 30° peel strength before ultraviolet irradiation) of the adhesive layer 2 with respect to the die bonding film 1 may be 20 N / 25 mm or less, 17.5 N / 25 mm or less, or 15 N / 25 mm or less.

[0025] The 30° peel strength of the adhesive layer 2 with respect to the die bonding film 1 before ultraviolet irradiation is 6.0 N / 25 mm or more, and the irradiation amount is 150 N / cm 2The 30° peel strength of the adhesive layer 2 against the die bonding film 1 after ultraviolet irradiation may be 1.5 N / 25 mm or less. The fact that the 30° peel strength of the adhesive layer 2 decreases due to ultraviolet irradiation is particularly advantageous for suppressing the scattering of chips and the peeling of the die bonding film 1 from the adhesive layer 2, and for easily picking up the chips. The 30° peel strength here can be a value measured in an environment of a temperature of 23°C and a relative humidity of 40%.

[0026] The base film 3 constituting the dicing film 5 can be selected from the base films constituting the dicing die bonding films commonly used in the process of dividing a semiconductor wafer by a method including stretching the dicing die bonding film. The base film 3 may be a resin film. For example, it may be a resin film containing a resin selected from polyester (polyethylene terephthalate (PET), polybutylene terephthalate, polyethylene naphthalate, etc.), polyolefin (polyethylene film, polypropylene, etc.), polycarbonate, polyamide, polyimide, polyamideimide, polyetherimide, polyethersulfide, polyethersulfone, polyetherketone, polyphenylene ether, and polyphenylene sulfide. The base film 3 may be a single-layer film or a multilayer film composed of two or more films. The thickness of the base film 3 may be, for example, 10 μm or more, 15 μm or more, or 20 μm or more, and may be 200 μm or less, 175 μm or less, or 150 μm or less.

[0027] The base film 3 illustrated in FIG. 1 has a rectangular main surface, but the shape of the base film 3 is not limited thereto. The base film 3 may be a long film. A plurality of adhesive layers 2 may be arranged on a single long base film 3.

[0028] FIG. 2 and FIG. 3 are process diagrams showing an example of a method for manufacturing a semiconductor device using the dicing die bonding film exemplified above. The method shown in FIGS. 2 and 3 includes attaching the bonding film 1 of the dicing die bonding film 10 to the semiconductor wafer Wa, and stretching the dicing die bonding film 10. By this method, the semiconductor wafer Wa and the bonding film 1 are divided, thereby forming a plurality of chips 30 with chips C and fragmented bonding films 1a on the adhesive layer 2, heating and shrinking the dicing film 5, and picking up the chips 30 with the bonding film.

[0029] The semiconductor wafer Wa has two main surfaces F1 and F2. For example, the main surface F1 may be the circuit surface and the main surface F2 may be the back surface opposite to the circuit surface. The semiconductor wafer Wa may be a silicon wafer. When the semiconductor wafer Wa is divided by the stealth dicing method, a modified layer may be formed along the planned cutting line by irradiating the semiconductor wafer Wa with a laser beam before the bonding film 1 is attached. Thereafter, the semiconductor wafer Wa may be subjected to back grinding and polishing processes.

[0030] In the case of the example of FIG. 2(a), the bonding film 1 is attached to the semiconductor wafer Wa in a direction in which the bonding film 1 is in contact with the main surface F2 of the semiconductor wafer Wa. Further, a dicing ring DR is attached so as to surround the semiconductor wafer Wa to the main surface 2b on the bonding film 1 side of the adhesive layer 2.

[0031] Thereafter, as shown in FIG. 2(b), under low temperature conditions, the dicing film 5 is stretched by pushing up the area inside the dicing ring DR of the dicing film 5 with the ring Ra. The temperature at this time may be, for example, -15 to 0°C. In the case of the stealth dicing method, due to the stretching of the dicing film 5, the semiconductor wafer Wa and the die bonding film 1 are divided along the modified layer in the semiconductor wafer Wa. By this division, the semiconductor wafer Wa is divided into a plurality of chips C, and the die bonding film 1 is divided into fragmented portions 1a attached to the individual chips C. That is, a chip 30 with a die bonding film having the chip C and the fragmented die bonding film 1a is formed on the adhesive layer 2.

[0032] After the ring Ra is lowered, as shown in FIG. 3(a), the area between the dicing ring DR and the chip 30 with a die bonding film in the dicing film 5 is heated by the heater H. Due to the shrinkage of the heated portion of the dicing film 5, the interval between the chips 30 with a die bonding film can be further widened.

[0033] After reducing the adhesive force of the adhesive layer 2 by ultraviolet irradiation as necessary, as shown in FIG. 3(b), the individual chips 30 with a die bonding film pushed up by the pushing-up jig 42 are picked up by the suction collet 44. The picked-up chips 30 with a die bonding film may be pressure-bonded to a circuit board or another chip.

[0034] The dicing die bonding film according to the present disclosure is particularly useful for manufacturing a semiconductor device by a method including dividing a thin semiconductor wafer and a die bonding film that are easily damaged. The thickness of the semiconductor wafer to be divided and the fragmented chips may be, for example, 50 μm or less, or may be 10 μm or more.

[0035] The dicing die bonding film according to the present disclosure is also useful for manufacturing semiconductor devices by a method including forming chips having a rectangular main surface by dividing a semiconductor wafer. On the main surface of the formed chips, the ratio of the long side to the short side may be 3 or more and may be 10 or less. The thickness of the chips having a rectangular main surface may be 50 μm or less. By laminating a plurality of thin chips having a rectangular main surface, for example, a 3D NAND flash memory can be manufactured.

Example

[0036] The present invention is not limited to the following examples. Unless otherwise specified, all materials used were obtained as reagents.

[0037] Example 1 1. Synthesis of acrylic resin The following components were placed in a 2000 ml flask equipped with a three-necked motor, a stirring blade, and a nitrogen introduction tube to form a reaction solution. · Ethyl acetate (solvent): 635 g · 2-Ethylhexyl acrylate: 395 g · 2-Hydroxyethyl acrylate: 100 g · Methacrylic acid: 5 g · Azobisisobutyronitrile: 0.2 g

[0038] After stirring the reaction solution until it became sufficiently uniform, the dissolved oxygen in the system was removed by bubbling with nitrogen gas at a flow rate of 500 mL / min for 60 minutes. The reaction solution was heated to 78°C over 1 hour, and the polymerization reaction was allowed to proceed at the same temperature for 6 hours. Next, the reaction solution was transferred to a 2000 mL autoclave equipped with a three-necked motor, a stirring blade, and a nitrogen introduction tube. In the autoclave, the reaction solution was heated to 120°C for 4.5 hours under an atmosphere of 0.28 MPa. Thereafter, the reaction solution containing the generated polymer was cooled to room temperature (25°C, the same hereinafter).

[0039] 490 g of ethyl acetate was added to the reaction solution, and the reaction solution was stirred. Next, 0.025 g of methoquinone (polymerization inhibitor) and 0.10 g of dioctyltin dilaurate (urethane-forming catalyst) were added. Further, 81 g of 2-methacryloyloxyethyl isocyanate (manufactured by Resonaac Co., Ltd., Karenz MOI (trade name)) was added to the reaction solution, and the reaction solution was heated at 70 °C for 6 hours to advance the reaction between the polymer and 2-methacryloyloxyethyl isocyanate. After the reaction solution was cooled to room temperature, ethyl acetate was added to obtain an acrylic resin solution containing an acrylic resin having a methacryloyloxy group and a hydroxyl group at a concentration of 35% by mass.

[0040] The obtained acrylic resin solution was vacuum dried at 60 °C overnight, and the remaining solid content was subjected to elemental analysis using a fully automatic elemental analyzer (manufactured by Elementar, trade name: varioEL). From the nitrogen content obtained by elemental analysis, the amount of 2-methacryloyloxyethyl groups introduced per 1 g of the acrylic resin was calculated to be 0.89 mmol / g.

[0041] The weight average molecular weight (standard polystyrene conversion value) of the acrylic resin was determined by GPC measurement of the acrylic resin. For GPC measurement, SD-8022 / DP-8020 / RI-8020 manufactured by Tosoh Corporation was used. Gelpack GL-A150-S / GL-A160-S of Resonaac Co., Ltd. was used as the column. Tetrahydrofuran was used as the eluent. The weight average molecular weight of the acrylic resin was 350,000.

[0042] 2. Dicing film By mixing the following components, a varnish (concentration of components other than the solvent: 25% by mass) for forming an ultraviolet curable adhesive layer was prepared. The acrylic resin was synthesized in "1. Synthesis of acrylic resin". "Solid content" means the amount of components other than the solvent. · Acrylic resin: 100 parts by mass (solid content) · Photoinitiator (1-hydroxycyclohexyl phenyl ketone, manufactured by Ciba Specialty Chemicals Inc., Irgacure 184, "Irgacure" is a registered trademark): 2.0 parts by mass · Crosslinking agent (polyfunctional isocyanate, manufactured by Nippon Polyurethane Industry Co., Ltd., Coronate L, solid content 75%): 4.1 parts by mass (solid content) · Ethyl acetate (solvent)

[0043] A polyethylene terephthalate film having a release surface (width 450 mm, length 500 mm, thickness 38 μm) was prepared as a cover film. A varnish was applied to the release surface of the cover film using an applicator, and the coating film was dried at 80°C for 5 minutes. Thereby, a laminated film composed of the cover film and an adhesive layer (thickness 2 μm) formed thereon was obtained.

[0044] A polyolefin film having a surface subjected to corona treatment (width 450 mm, length 500 mm, thickness 100 μm) was prepared as a base film. Hereinafter, the longitudinal direction of the base film is referred to as the MD direction, and the direction perpendicular to the MD direction is referred to as the TD direction. This base film was laminated onto the adhesive layer of the above laminated film at room temperature with the surface subjected to corona treatment in contact with the adhesive layer. Next, the whole was pressed with a rubber roll to closely adhere the base film to the adhesive layer. The dicing film having the base film, the adhesive layer, and the cover film was left at room temperature for 3 days.

[0045] 3. Dice bonding film The following components and a mixture containing cyclohexanone were stirred and then kneaded using a bead mill for 90 minutes. · Epoxy resin (N500P - 10 (trade name), manufactured by DIC Corporation, cresol novolak type epoxy resin, epoxy equivalent 200, molecular weight 980, softening point 85°C): 55 parts by mass · Phenolic resin (MEH - 7800M (trade name), manufactured by Meiwafosis Co., Ltd., hydroxyl equivalent 175): 45 parts by mass · Silane coupling agent 1 (NUC A - 189 (trade name), manufactured by Nippon Unicar Co., Ltd., γ - mercaptopropyltrimethoxysilane): 1.7 parts by mass · Silane coupling agent 2 (NUCA-1160 (trade name), manufactured by Nippon Unicar Co., Ltd., γ-ureidopropyltriethoxysilane): 0.2 parts by mass · Filler (Aerosil R972 (trade name), manufactured by Nippon Aerosil Co., Ltd., silica, average particle size 0.016 μm): 32 parts by mass "Aerosil R972" is silica particles having an organic group (for example, a methyl group) on the surface.

[0046] The following components were added to the kneaded mixture, and the mixture was further stirred. Thereafter, by vacuum degassing, a varnish for forming a die bonding film was obtained. · Acrylic rubber having an epoxy group (HTR-860P-3 (trade name), manufactured by Nagase ChemteX Corporation, content of glycidyl acrylate or glycidyl methacrylate: 3% by mass, weight average molecular weight: 800,000): 280 parts by mass · Curing accelerator (Curezol 2PZ-CN (trade name), "Curezol" is a registered trademark, manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole): 0.5 parts by mass

[0047] A polyethylene terephthalate film (thickness 35 μm) having a release surface was prepared as a carrier film. The varnish for forming a die bonding film was applied to the release surface of the carrier film, and the coating film was heated and dried at 140 °C for 5 minutes. Thereby, a laminated film composed of the carrier film and a die bonding film in a B-stage state (adhesive layer with a thickness of 7 μm) formed thereon was obtained.

[0048] 4. Preparation of Dicing Die Bonding Film The laminated film having a die bonding film was cut into a circle (diameter: 312 mm). With respect to the circular die bonding film, a dicing film with the cover film peeled off was attached in such a direction that the adhesive layer was in contact with the die bonding film. The formed laminate was left at room temperature for 1 day. Thereafter, the outside of the portion of the dicing film bonded to the die bonding film was cut, and a dicing die bonding film having a circular die bonding film and a circular (diameter: 370 mm) dicing film covering the die bonding film and having a portion protruding from the die bonding film was obtained. By the same operation, a plurality of dicing die bonding films for use in various evaluation tests described later were produced.

[0049] Examples 2 to 5 and Comparative Examples 1 to 5 A plurality of dicing die bonding films were produced in the same manner as in Example 1, except that the thicknesses of the die bonding film and the adhesive layer were changed as shown in Table 1 or Table 2.

[0050] Reference Examples 1 to 3 A plurality of dicing die bonding films were produced in the same manner as in Example 1, except that the thickness of the die bonding film was changed to 20 μm and the thickness of the adhesive layer was changed as shown in Table 1.

[0051] 5. Evaluation (1) Adhesion of the adhesive layer to the die bonding film (30° peel strength) From each dicing die bonding film, a measurement sample (a laminate composed of an adhesive layer and an adhesive layer (die bonding film)) having a size of 25 mm in width and 100 mm in length was cut out. For each measurement sample, the illuminance was 100 mW / cm 2 , and the irradiation dose was 150 mJ / cm 2Under the conditions of , ultraviolet rays (UV) were irradiated. For the measurement samples before and after UV irradiation, the peel strength (30° peel strength) was measured when the adhesive layer was peeled off from the die bonding film at a peel angle of 30°. The tensile speed was 60 mm / min. The measurement samples were stored in an environment of a temperature of 23°C and a relative humidity of 40%, and the 30° peel strength was measured in the same environment.

[0052] (2) Processability evaluation (i) Dicing test A protective tape was attached to the surface of a silicon wafer (diameter: 12 inches, thickness: 775 μm). By irradiating the laser light on the surface of the protective tape side and the opposite side of the silicon wafer under the following stealth dicing conditions, a modified layer for stealth dicing was formed inside the silicon wafer along the planned cutting lines composed of a plurality of straight lines perpendicular to each other. Stealth dicing conditions: · Stealth dicing apparatus: DFL7361 (manufactured by DISCO Corporation) · Laser oscillator type: Semiconductor laser-excited Q-switch solid laser · Wavelength: 1342 nm · Frequency: 60 kHz · Output: 0.8 W · Number of passes: 2 · Chip size: 3 mm × 12 mm · Dicing speed: 800 mm / second

[0053] The surface of the silicon wafer on the side opposite to the protective tape was polished using a grinder polisher apparatus (DGP8761, manufactured by DISCO Corporation) until the thickness of the silicon wafer became 30 μm. The polished surface of the silicon wafer was attached to the die bonding film of the dicing die bonding film under the following conditions. At this time, the direction of the modified layer of the silicon wafer was adjusted so that it was along the MD direction and the TD direction of the base film of the dicing die bonding film. Furthermore, the adhesive layer of the portion protruding from the die bonding film was attached to the dicing ring. Then, the protective tape was peeled off from the silicon wafer. Bonding conditions: · Bonding device: DFM2800 (manufactured by DISCO Corporation) · Bonding temperature: 65°C · Bonding speed: 10 mm / s · Bonding tension level: Level 7

[0054] Next, the dicing die bonding film was stretched by cooling expansion under the following conditions using a die separator (DDS2300, manufactured by DISCO Corporation), thereby dividing the silicon wafer and the die bonding film. Thereafter, the dicing film was shrunk by heating under the following conditions. Cooling expansion conditions: · Cooling temperature: 0°C · Cooling time: 120 seconds · Lift amount: 10 mm · Lift speed: 120 mm / second · Holding time after lift: 10 seconds Heating conditions: · Heater temperature: 250°C · Heater rotation speed: 10° / second · Lift amount: 8 mm · Tape cooling waiting time: 10 seconds

[0055] After the shrinkage of the dicing film, ultraviolet rays were irradiated on the adhesive layer under the following conditions, thereby reducing the adhesive force of the adhesive layer. Ultraviolet irradiation conditions: · Illuminance of ultraviolet rays: 100 mW / cm 2 · Irradiation dose of ultraviolet rays: 150 mJ / cm 2

[0056] (ii) Processability Retention During the dicing test, the presence or absence of chip scattering and the presence or absence of peeling between the adhesive layer (die bonding film) of the portion protruding from the silicon wafer and the adhesive layer were confirmed. The retention was evaluated according to the following criteria. A: No chip scattering and no peeling at the interface between the adhesive layer and the adhesive layer B: No chip scattering, delamination at the interface between the adhesive layer and the pressure-sensitive adhesive layer C: Chip scattering

[0057] Fragmentability All die bonding films between adjacent chips were observed, and the fragmentability was evaluated according to the following criteria based on the number of locations where the die bonding film was not fragmented. A: 0 B: 1 or more and less than 10 C: 10 or more

[0058] Kerf width The width of the grid-like gap (kerf width) formed between adjacent chips was measured by microscopic observation. The kerf width of the gap along the MD direction or TD direction around the chips was measured at two locations near each of the four positions that divide the portion corresponding to the outer periphery of the silicon wafer into four equal parts, and at one location in the central part of the silicon wafer. The average value of the kerf widths of the gaps along the MD direction or TD direction measured at a total of nine locations was obtained.

[0059] Pick-up property After evaluating the holding property, fragmentability, and kerf width, 100 chips with die bonding films were picked up under the following conditions. Pick-up conditions: · Die bonder: DB830-P (manufactured by Fast Forward Technology Co., Ltd.) · Lift pin: EJECTOR NEEDLE SEN2-83-05 (diameter: 0.7 mm, tip shape: hemisphere with a radius of 350 μm, manufactured by Micro Mechanics) · Lift height: 250 μm · Lift speed: 1 mm / second · Number of lift pins: 8 Based on the pick-up success rate, the pick-up property was evaluated according to the following criteria. A: 100% B: 80% or more and less than 100% C: 60% or more and less than 80%

[0060]

Table 1

[0061]

Table 2

[0062] The evaluation results are shown in Table 1. When the thickness of the die bonding film is 20 μm as in Reference Examples 1 to 3, if the thickness of the adhesive layer becomes thinner, the die bonding film tends to be easily peeled off during the dicing process. However, when the thickness of the die bonding film is 10 μm or less as in Examples 1 to 5 and Comparative Examples 1 to 5, it was confirmed that good holding properties during the dicing process are maintained even if the adhesive layer becomes thinner. Furthermore, it was also confirmed that when the thickness of the adhesive layer is less than 10 μm as in Examples 1 to 5, the fragmentability of the die bonding film is improved. In addition, it was also confirmed that when the adhesive layer becomes thinner, it is easy to secure a large kerf width.

Explanation of Signs

[0063] 1…Die bonding film, 1a…Fragmented die bonding film, 2…Adhesive layer, 3…Base film, 5…Dicing film, 10…Dicing die bonding film, 30…Chip with die bonding film, C…Chip, Wa…Semiconductor wafer.

Claims

1. A die bonding film, A dicing film having an adhesive layer laminated on the die bonding film, Comprising, The thickness of the die bonding film is 10 μm or less, The thickness of the adhesive layer is less than 10 μm, A dicing die bonding film.

2. The dicing die bonding film according to Claim 1, wherein the 30° peel strength of the adhesive layer with respect to the die bonding film is 6.0 N / 25 mm or more.

3. The dicing die bonding film according to Claim 1 or 2, wherein the dicing film further has a base film, and the adhesive layer is provided on the base film.

4. Attaching the die bonding film of the dicing die bonding film according to Claim 1 or 2 to a semiconductor wafer, Dividing the semiconductor wafer and the die bonding film by a method including stretching the dicing die bonding film, thereby forming chips and diced die bonding film-attached chips having the diced die bonding film on the adhesive layer, A method for manufacturing a semiconductor device, comprising.

5. The method according to Claim 4, wherein the method for dividing the semiconductor wafer and the die bonding film is a stealth dicing method.

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