Power conversion module

Abstract

To provide a power conversion module capable of suppressing erroneous turning-on of a semiconductor element due to electromagnetic noise.SOLUTION: Semiconductor elements 61H, 61L constituting a first inverter and semiconductor elements 62H, 62L constituting a second inverter are arranged in an X direction. A P terminal 111 and an N terminal 112, which are power supply terminals, and semiconductor elements 60 are arranged in a Y direction. The semiconductor elements 61H, 62H connected to a changeover switch 81 via P wirings 514, 524, 534, which are power supply wirings, are disposed at positions farther from the P terminal 111 and the N terminal 112 in the Y direction, as compared to the changeover switch 81. The semiconductor elements 61L, 62L connected to a changeover switch 82 via N wirings 515, 525, 535 are disposed at positions farther from the P terminal 111 and the N terminal 112 in the Y direction, as compared to the changeover switch 82.SELECTED DRAWING: Figure 8

Description

Technical Field

[0001] The disclosure in this specification relates to a power conversion module.

Background Art

[0002] Patent Document 1 discloses a power conversion module including a first inverter connected to one end of a winding of a rotating electrical machine, a second inverter connected to the other end of the winding, and a switching switch. The switching switch is disposed in a path connecting the first inverter and the second inverter, connects the DC power supply and the second inverter in the closed state, and cuts off the connection between the DC power supply and the second inverter in the open state. The description of the prior art document is incorporated herein by reference as an explanation of the technical elements in this specification.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the configuration of Patent Document 1, there is a risk that the semiconductor elements constituting the inverter may turn on erroneously due to electromagnetic noise. From the above viewpoints or other viewpoints not mentioned, further improvement of the power conversion module is required.

[0005] One object of the disclosure is to provide a power conversion module capable of suppressing the erroneous turn-on of semiconductor elements due to electromagnetic noise.

Means for Solving the Problems

[0006] One aspect of the disclosure is a power conversion module, a first semiconductor element (61H, 61L) constituting a first inverter (8) connected to one end of a winding of a rotating electrical machine (3), The second semiconductor elements (62H, 62L) that constitute a second inverter (9) connected to the other end of the winding, A plurality of power supply terminals (111, 112, 114, 114A, 114B) connected to the smoothing capacitors (22, 7), Power supply wirings (514, 515, 524, 525, 534, 535) connecting at least one of the first inverter and the second inverter to the power supply terminals, A changeover switch (80) that is disposed at a portion connecting the first inverter and the second inverter among the power supply wirings, connects the smoothing capacitor and the second inverter in a closed state, and disconnects the connection between the smoothing capacitor and the second inverter in an open state, and includes, The first semiconductor element and the second semiconductor element are arranged side by side in a predetermined direction, The semiconductor element (60) including the first semiconductor element and the second semiconductor element and the power supply terminals are arranged side by side in a direction orthogonal to the predetermined direction, The semiconductor element electrically connected to the changeover switch via the power supply wiring is disposed at a position farther from the power supply terminal in the orthogonal direction than the corresponding changeover switch.

[0007] It has been found that the electromagnetic noise radiated by the smoothing capacitor affects the operation of the semiconductor element along with the switching operation of the semiconductor element. Based on this finding, according to the disclosed power conversion module, in the semiconductor element and the changeover switch that are electrically connected via the power supply wiring, the semiconductor element is disposed at a position farther from the power supply terminal than the changeover switch. That is, the semiconductor element is kept away from the smoothing capacitor. Thereby, it is possible to suppress the semiconductor element from being erroneously turned on due to the influence of the electromagnetic noise radiated by the smoothing capacitor.

[0008] The multiple aspects disclosed in this specification adopt different technical means to achieve their respective purposes. The claims and the reference signs in parentheses described in this section exemplify the correspondence with the parts of the embodiments described later, and are not intended to limit the technical scope. The purposes, features, and effects disclosed in this specification will become clearer by referring to the subsequent detailed description and the attached drawings.

Brief Description of the Drawings

[0009]

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Embodiments for Carrying Out the Invention

[0010] Hereinafter, a plurality of embodiments will be described with reference to the drawings. In each embodiment, the same reference numerals may be assigned to corresponding components, and redundant descriptions may be omitted. When only a part of the configuration is described in each embodiment, the configuration of other embodiments described previously can be applied to other parts of the said configuration. Also, not only the combinations of configurations explicitly shown in the description of each embodiment, but also the configurations of multiple embodiments can be partially combined with each other as long as there is no problem with the combination, even if not explicitly stated.

[0011] The power conversion module of this embodiment is applied to, for example, a moving body having a rotating electrical machine as a drive source. The moving body is, for example, an electric vehicle such as a battery electric vehicle (BEV), a hybrid electric vehicle (HEV), a plug-in hybrid electric vehicle (PHEV), a flying body such as an electric vertical take-off and landing aircraft or a drone, a ship, a construction machine, an agricultural machine, etc.

[0012] (First Embodiment) First, based on FIG. 1, the schematic configuration of the drive system of the moving body will be described.

[0013] <Drive System of the Moving Body> As shown in FIG. 1, the drive system 1 of the moving body includes a DC power supply 2, a rotating electrical machine 3, and a power conversion circuit 4.

[0014] The DC power supply 2 may be, for example, a rechargeable secondary battery such as a lithium ion battery or a nickel metal hydride battery. The DC power supply 2 may also be one that converts AC power into DC and outputs it.

[0015] The rotating electrical machine 3 is an open-wound three-phase rotating electrical machine with a neutral point released. The rotating electrical machine 3 has a U-phase winding 3U, a V-phase winding 3V, and a W-phase winding 3W. Hereinafter, the U-phase winding 3U, the V-phase winding 3V, and the W-phase winding 3W may be simply referred to as windings 3U, 3V, and 3W.

[0016] The rotating electrical machine 3 functions, for example, as a drive source for a moving body, that is, as an electric motor. When the moving body is a vehicle, the rotating electrical machine 3 generates torque for driving drive wheels (not shown). The rotating electrical machine 3 is not limited to an electric motor. The rotating electrical machine 3 may be a motor generator having functions as an electric motor and as a generator, or may be a generator.

[0017] The power conversion circuit 4 performs power conversion between the DC power supply 2 and the rotating electrical machine 3. The drive system 1 is a power supply common system that supplies power from a common DC power supply 2 to two inverters 8 and 9 described later in order to drive the rotating electrical machine 3. The drive system 1 may include only one common DC power supply 2 as illustrated in FIG. 1, or may include a plurality of them. The drive system 1 may include a power supply switch (not shown) such as an SMR between the DC power supply 2 and the power conversion circuit 4. SMR is an abbreviation for System Main Relay. When the power supply switch is turned on, power supply from the DC power supply 2 to the rotating electrical machine 3 becomes possible, and when the power supply switch is turned off, power supply from the DC power supply 2 to the rotating electrical machine 3 is cut off.

[0018] <Power Conversion Circuit> Next, the power conversion circuit 4 will be described with reference to FIG. 1. FIG. 1 shows an example of the power conversion circuit 4. The power conversion circuit 4 illustrated in FIG. 1 includes power supply lines 5 and 6, a smoothing capacitor 7, inverters 8 and 9, a switching switch 10, and snubber circuits 11 and 12.

[0019] The power line 5 is the power line on the high potential side. The power line 5 is connected to the positive electrode of the DC power supply 2. The power line 5 may be referred to as the positive electrode side power line, P line, etc. The power line 5 has a wiring 5A. The wiring 5A is a part of the wiring that constitutes the power line 5. The wiring 5A is the wiring that connects the inverter 8 and the inverter 9 among the power line 5. The power line 6 is the power line on the low potential side. The power line 6 is connected to the negative electrode of the DC power supply 2. The power line 6 may be referred to as the negative electrode side power line, N line, etc. The power line 6 has a wiring 6A. The wiring 6A is a part of the wiring that constitutes the power line 6. The wiring 6A is the wiring that connects the inverter 8 and the inverter 9 among the power line 6. The power lines 5 and 6 are constituted including a bus bar which is, for example, a metal plate material.

[0020] The smoothing capacitor 7 mainly smooths the DC voltage supplied from the DC power supply 2. The smoothing capacitor 7 is provided between the power lines 5 and 6. The positive electrode of the smoothing capacitor 7 is connected to the power line 5 between the DC power supply 2 and the inverters 8 and 9. The negative electrode of the smoothing capacitor 7 is connected to the power line 6 between the DC power supply 2 and the inverters 8 and 9. The smoothing capacitor 7 is connected in parallel to the inverters 8 and 9.

[0021] The inverters 8 and 9 are DC-AC conversion circuits. The inverter 8 is configured to include upper and lower arm circuits 8HL for three phases. The upper and lower arm circuits 8HL may be referred to as legs. The upper and lower arm circuits 8HL have an upper arm 8H and a lower arm 8L. The upper arm 8H and the lower arm 8L are serially connected between the power lines 5 and 6 with the upper arm 8H on the power line 5 side.

[0022] The connection point between the upper arm 8H and the lower arm 8L is connected to the winding of the corresponding phase in the rotating electrical machine 3 via the output line 13. The inverter 8 has six arms. Each arm is configured with a switching element. The number of switching elements constituting each arm is not particularly limited. It may be one or a plurality. In the case of a plurality, the plurality of switching elements connected in parallel to each other are turned on and off at the same timing by a common gate drive signal (drive voltage).

[0023] In the example shown in FIG. 1, an n-channel MOSFET 8S is adopted as the switching element constituting each arm. MOSFET is an abbreviation for Metal Oxide Semiconductor Field Effect Transistor. In the upper arm 8H, the drain terminal of the MOSFET 8S is connected to the power supply line 5. In the lower arm 8L, the source terminal of the MOSFET 8S is connected to the power supply line 6. The source terminal of the MOSFET 8S in the upper arm 8H and the drain terminal of the MOSFET 8S in the lower arm 8L are connected to each other.

[0024] A freewheeling diode 8D is connected in anti-parallel to each of the MOSFETs 8S. The diode 8D may be a parasitic diode (body diode) of the MOSFET 8S or may be provided separately from the parasitic diode. The anode terminal of the diode 8D is connected to the source terminal of the corresponding MOSFET 8S, and the cathode terminal is connected to the drain terminal.

[0025] The inverter 9 has the same configuration as the inverter 8. The inverter 9 is configured with upper and lower arm circuits 9HL for three phases. The upper and lower arm circuits 9HL have an upper arm 9H and a lower arm 9L. The upper arm 9H and the lower arm 9L are connected in series between the power supply lines 5 and 6 with the upper arm 9H on the power supply line 5 side.

[0026] The connection point between the upper arm 9H and the lower arm 9L is connected to the winding of the corresponding phase in the rotating electrical machine 3 via the output line 14. The inverter 9 also has six arms. Each arm is configured with a switching element. The number of switching elements constituting each arm is not particularly limited. It may be one or a plurality.

[0027] In the example shown in FIG. 1, as the switching element constituting each arm, an n-channel type MOSFET 9S is adopted. In the upper arm 9H, the drain terminal of the MOSFET 9S is connected to the power supply line 5. In the lower arm 9L, the source terminal of the MOSFET 9S is connected to the power supply line 6. The source terminal of the MOSFET 9S in the upper arm 9H and the drain terminal of the MOSFET 9S in the lower arm 9L are connected to each other. A freewheeling diode 9D is connected in anti-parallel to each of the MOSFET 9S.

[0028] As described above, the high-potential side terminals (drain terminals) of the upper arms 8H, 9H of the inverters 8, 9 are connected to the power supply line 5. The low-potential side terminals (source terminals) of the lower arms 8L, 9L are connected to the power supply line 6. The node, which is the connection point between the upper arm 8H and the lower arm 8L, is connected to one end of the winding of the corresponding phase via the output line 13, and the node between the upper arm 9H and the lower arm 9L is connected to the other end of the winding of the corresponding phase via the output line 14. Specifically, the node U1 of the upper and lower arm circuit 8HL of the U phase is connected to one end of the U-phase winding 3U, and the node U2 of the upper and lower arm circuit 9HL of the U phase is connected to the other end of the U-phase winding 3U. The node V1 of the upper and lower arm circuit 8HL of the V phase is connected to one end of the V-phase winding 3V, and the node V2 of the upper and lower arm circuit 9HL of the V phase is connected to the other end of the V-phase winding 3V. The node W1 of the upper and lower arm circuit 8HL of the W phase is connected to one end of the W-phase winding 3W, and the node W2 of the upper and lower arm circuit 9HL of the W phase is connected to the other end of the W-phase winding 3W.

[0029] Note that the switching elements constituting the inverters 8 and 9 are not limited to the MOSFETs described above. For example, IGBTs may be employed. IGBT is an abbreviation for Insulated Gate Bipolar Transistor. Also in the case of IGBTs, a diode for reflux is connected in anti-parallel.

[0030] The switching switch 10 is a semiconductor switch. The semiconductor switch is formed by forming a switching element on a semiconductor chip. The switching element is not particularly limited. It may have the same configuration as the switching element constituting at least one of the inverters 8 and 9, or a different configuration. The switching switch 10 is provided between the inverter 8 and the inverter 9 in at least one of the power supply lines 5 and 6. In the closed state, the switching switch 10 connects the high-potential side terminal of the upper arm 9H of the inverter 9 and the smoothing capacitor 7 (DC power supply 2). In the open state, the switching switch 10 disconnects the connection between the high-potential side terminal of the upper arm 9H and the smoothing capacitor 7 (DC power supply 2). The switching switch 10 may be referred to as a switch, a switching switch, etc.

[0031] The switching element of the switching switch 10 illustrated in FIG. 1 is a MOSFET. A diode is connected in anti-parallel to the MOSFET. The diode is, for example, a parasitic diode. The switching switch 10 includes switching switches 10A and 10B. The switching switch 10A is disposed on the wiring 5A of the power supply line 5. The switching switch 10A is disposed on the wiring 5A such that the drain terminal of the MOSFET faces the inverter 8 side and the source terminal faces the inverter 9 side. That is, it is disposed such that the forward direction of the diode is from the inverter 9 to the inverter 8.

[0032] The changeover switch 10B is arranged on the wiring 6A of the power line 6. The changeover switch 10B is arranged on the wiring 6A such that the drain terminal of the MOSFET faces the inverter 9 side and the source terminal faces the inverter 8 side. That is, it is arranged such that the forward direction of the diode is from the inverter 8 to the inverter 9. When the MOSFET is turned on and the changeover switch 10 is in the closed state, the inverter 9 is electrically connected to the smoothing capacitor 7 (DC power supply 2). When the MOSFET is turned off and the changeover switch 10 is in the open state, the electrical connection between the inverter 9 and the smoothing capacitor 7 is interrupted.

[0033] The snubber circuit 11 is connected in parallel to the inverter 9, that is, the upper and lower arm circuits 9HL. The snubber circuit 11 reduces the inductance of the upper and lower arm circuits 9HL. In other words, the snubber circuit 11 absorbs the transient high voltage, so-called switching surge, generated during the switching of the switching element (MOSFET 9S) that constitutes the upper and lower arm circuits 9HL. As a result, the inverter 9 can perform high-speed switching.

[0034] The snubber circuit 11 has at least a capacitor 11C. The snubber circuit 11 may be, for example, a C snubber circuit having a capacitor, or an RC snubber circuit having a capacitor and a resistor. It may also be an RCD snubber circuit having a capacitor, a resistor, and a diode. The snubber circuit 11 shown in FIG. 1 is an RC snubber circuit in which the capacitor 11C and the resistor 11R are connected in series. One end of the snubber circuit 11 is connected to the power line 5. One end of the snubber circuit 11 is connected to a portion of the wiring 5A that connects the changeover switch 10 and the inverter 9. The other end of the snubber circuit 11 is connected to the power line 6.

[0035] In the power conversion circuit 4 illustrated in FIG. 1, the snubber circuits 11 are provided for each phase with respect to the upper and lower arm circuits 9HL. The power conversion circuit 4 includes three snubber circuits 11. In each snubber circuit 11, one of the ends is connected to the power line 5, and the other end is connected to the power line 6. Each snubber circuit 11 has a capacitor 11C and a resistor 11R. One of the snubber circuits 11 is connected in parallel to the U-phase upper and lower arm circuit 9HL. Another one of the snubber circuits 11 is connected in parallel to the V-phase upper and lower arm circuit 9HL. Another one of the snubber circuits 11 is connected in parallel to the W-phase upper and lower arm circuit 9HL.

[0036] The snubber circuit 12 is connected in parallel to the inverter 8, that is, the upper and lower arm circuit 8HL. The snubber circuit 12 reduces the inductance of the upper and lower arm circuit 8HL. As a result, the inverter 8 can perform high-speed switching. The snubber circuit 12 has at least a capacitor 12C. The snubber circuit 12 may be, for example, a C snubber circuit, an RC snubber circuit, or an RCD snubber circuit. The snubber circuit 12 shown in FIG. 1 is an RC snubber circuit in which a capacitor 12C and a resistor 12R are connected in series. One end of the snubber circuit 12 is connected to the power line 5. The other end of the snubber circuit 11 is connected to the power line 6.

[0037] In the power conversion circuit 4 illustrated in FIG. 1, the snubber circuits 12 are provided for each phase with respect to the upper and lower arm circuits 8HL. The power conversion circuit 4 includes three snubber circuits 12. In each snubber circuit 12, one of the ends is connected to the power line 5, and the other end is connected to the power line 6. Each snubber circuit 12 has a capacitor 12C and a resistor 12R. One of the snubber circuits 12 is connected in parallel to the U-phase upper and lower arm circuit 8HL. Another one of the snubber circuits 12 is connected in parallel to the V-phase upper and lower arm circuit 8HL. Another one of the snubber circuits 12 is connected in parallel to the W-phase upper and lower arm circuit 8HL.

[0038] As illustrated in FIG. 1, the power conversion circuit 4 may include a control unit (CTR) 15. The control unit 15 may be configured to include, for example, a processor, a memory, a storage, etc. The processor executes various processes by accessing the memory. The memory is a rewritable volatile storage medium. The memory is, for example, a RAM. RAM is an abbreviation for Random Access Memory. The storage is, for example, a rewritable non-volatile storage medium. A program executed by the processor is stored in the storage. The program constructs a plurality of functional units by causing the processor to execute a plurality of instructions. The processes executed by the control unit 15 may be realized by software processes in which the processor executes the above-described program, or may be realized by hardware processes using dedicated electronic circuits. They may also be realized by a combination of software processes and hardware processes.

[0039] The control unit 15 may have, for example, a drive command generation unit (not shown) and a drive circuit unit. The drive command generation unit controls the inverters 8 and 9. The drive command generation unit generates a drive command (command signal) for controlling the on / off of the MOSFETs 8S and 9S and outputs it to the drive circuit unit. The drive command generation unit generates a drive command based on drive requirements of the rotating electrical machine 3 such as a torque command value input from a higher-level ECU (not shown) and signals detected by various sensors. The various sensors may include a current sensor, a rotation angle sensor, a voltage sensor, etc. (not shown). The current sensor detects the phase current flowing through the windings 3U, 3V, and 3W of each phase. The rotation angle sensor detects the rotation angle of the rotor of the rotating electrical machine 3. The voltage sensor detects the voltage across the smoothing capacitor 7.

[0040] The drive command generation unit controls the changeover switch 10 (10A, 10B). The drive command generation unit generates a drive command for controlling the on / off state of the changeover switch 10 and outputs it to the drive circuit unit. The drive circuit unit may be referred to as a driver. The drive circuit unit can independently control the on / off states of the MOSFETs 8S, 9S, and the changeover switch 10 based on the drive command. For the sake of simplicity, in FIG. 1, the signal lines for transmitting drive signals from the control unit 15 to each switching element are omitted.

[0041] <Star connection drive and open connection drive> Next, based on FIGS. 2, 3, and 4, the star connection drive and the open connection drive will be described. FIG. 2 shows an example of an operating point map of a rotating electrical machine with the rotational speed on the horizontal axis and the torque on the vertical axis. FIG. 3 is a diagram showing the star connection drive. FIG. 4 is a diagram showing the open connection drive. For the sake of simplicity, in FIGS. 3 and 4, the control unit 15 is omitted.

[0042] As shown in FIG. 2, the drive region of the rotating electrical machine 3 is divided into two regions according to the rotational speed and the torque. One of the drive regions is the star connection drive region. The star connection drive region is the normal operation region. The other drive region is the open connection drive region. The open connection drive region is a region with higher rotation or higher torque than the star connection drive region.

[0043] When the operating point is in the star connection driving region, the control unit 15 executes the control of star connection driving. Star connection driving may be referred to as Y driving. The control unit 15 controls the MOSFETs 8S, 9S and the switching switch 10 so that the windings 3U, 3V, 3W are in a star connection state. Specifically, as shown in FIG. 3, the MOSFETs of the switching switch 10 (10A, 10B) are turned off and the switching switch 10 is turned to the open state. Also, the inverter 9 is neutralized. As illustrated in FIG. 3, for example, the MOSFET 9S of the upper arm 9H of all phases may be turned on and the MOSFET 9S of the lower arm 9L of all phases may be turned off. The MOSFET 9S of the upper arm 9H of all phases may be turned off and the MOSFET 9S of the lower arm 9L of all phases may be turned on. Then, the MOSFET 8S of the inverter 8 is controlled according to a driving request or the like.

[0044] FIG. 3 shows one of the energization patterns in star connection driving. The dashed-dotted arrow shown in FIG. 3 indicates an example of a current path. FIG. 3 shows the current path when the MOSFET 8S of the upper arm 8H of the U phase and the MOSFET 8S of the lower arm 8L of the W phase are turned on. In the example shown in FIG. 3, the upper arm 9H side of the inverter 9 is turned on and the lower arm 9L side is turned off. The current flows in the order of the upper arm 8H of the U phase → node U1 → U phase winding 3U → node U2 → upper arm 9H of the U phase → upper arm 9H of the W phase → node W2 → W phase winding 3W → node W1 → lower arm 8L of the W phase. In this way, in star connection driving, the current flows without passing through the switching switch 10.

[0045] When the operating point is in the open-circuit drive region, the control unit 15 executes the control of the open-circuit drive. The open-circuit drive is sometimes referred to as H drive. The control unit 15 turns on the MOSFETs of the switching switches 10 (10A, 10B) to close the switching switches 10. Further, the control unit 15 releases the neutral point by the inverter 9. By releasing the neutral point, an open-circuit circuit of the upper and lower arm circuits 8HL, 9HL of the U phase via the U-phase winding 3U is formed. Similarly, an open-circuit circuit of the upper and lower arm circuits 8HL, 9HL of the V phase via the V-phase winding 3V is formed. An open-circuit circuit of the upper and lower arm circuits 8HL, 9HL of the W phase via the W-phase winding 3W is formed. The control unit 15 regards each phase as an independent open-circuit circuit and controls the applied voltage for each phase.

[0046] Figure 4 shows one of the energization patterns in the open-circuit drive. The dashed-dotted arrow shown in Figure 4 indicates an example of the current path. Figure 4 shows the current path when the MOSFET 8S of the lower arm 8L of the W phase and the MOSFET 9S of the upper arm 9H of the W phase are turned on. The current flows in the order of the switching switch 10 → the upper arm 9H of the W phase → the node W2 → the W-phase winding 3W → the node W1 → the lower arm 8L of the W phase. In this way, in the open-circuit drive, the current flows through the switching switch 10.

[0047] As described above, the power conversion circuit 4 is configured to be able to switch between the star connection drive and the open-circuit drive. The power conversion circuit 4 is configured to be able to execute the star connection drive. The power conversion circuit 4 is configured to be able to execute the open-circuit drive. By executing the open-circuit drive instead of the star connection drive, it is possible to output in a region on the higher rotation side or a region on the higher torque side.

[0048] <Charging Using the Power Conversion Circuit> Next, with reference to Figure 5, charging using the power conversion circuit 4 will be described. Figure 5 shows a circuit configuration showing a state where an external device is connected. In Figure 5, the external device is shown in a simplified manner.

[0049] As shown in FIG. 5, the external device 16 is connected to the power lines 5 and 6. The external device 16 is connected in parallel to the DC power supply 2. The external device 16 is an element separate from the elements constituting the drive system 1. The external device 16 may be, for example, an element outside a moving body (vehicle). The illustrated external device 16 is a charger. The charger charges the DC power supply 2. The voltage supplied by the external device 16 is lower than the power supply voltage of the DC power supply 2. For example, the DC power supply 2 is 800V and the external device 16 (charger) is 400V. In the rotating electrical machine 3 and the power conversion circuit 4, the windings 3U, 3V, 3W of the rotating electrical machine 3 and the upper and lower arm circuits 8HL constituting the inverter 8 function as a boost circuit.

[0050] The external device 16 is connected to the drive system 1 (power conversion circuit 4), for example, during a travel stop. When the external device 16 is connected, the control unit 15 controls the inverters 8 and 9 and the switching switch 10 so as to boost the supply voltage of the external device 16 and charge the DC power supply 2. In the boost operation, one phase may be used, or a plurality of phases (polyphase) may be used. The control unit 15 turns off the MOSFET of the switching switch 10. In this state, the control unit 15 turns on the upper arm 9H of the inverter 9 and controls the on / off of the upper and lower MOSFETs 8S of the upper and lower arm circuits 8HL in the corresponding phase.

[0051] The external device 16 may be a DC power supply (external power supply) separate from the DC power supply 2. The external power supply may be, for example, a secondary battery or may include a DC-AC conversion circuit. The DC power supply 2 charges the external device 16. The power supply voltage of the external device 16 is lower than the power supply voltage of the DC power supply 2. In the rotating electrical machine 3 and the power conversion circuit 4, the windings 3U, 3V, 3W of the rotating electrical machine 3 and the upper arm 8H of the inverter 8 function as a buck circuit.

[0052] When the external device 16 is connected to the drive system 1, the control unit 15 controls the inverters 8, 9 and the switching switch 10 so as to step down the power supply voltage of the DC power supply 2 and charge the external device 16. In the step-down operation, one phase may be used, or a plurality of phases (multi-phase) may be used. The control unit 15 turns off the MOSFET of the switching switch 10. In this state, the control unit 15 turns on the upper arm 9H of the inverter 9 and controls the on / off of the MOSFET 8S of the upper arm 8H of the corresponding phase. Note that the MOSFET 8S of the lower arm 8L of the corresponding phase is turned off. When the MOSFET 8S of the upper arm 8H is turned off, current flows through the diode of the lower arm 8L of the corresponding phase.

[0053] FIG. 6 shows an example of an external device connection structure corresponding to the circuit configuration shown in FIG. 5. FIG. 6 shows the connection structure between the power conversion module and the external device. In FIG. 6, the external device is shown in a simplified manner. FIG. 6 shows the directions (X direction, Y direction) described later.

[0054] The power conversion module 20 shown in FIG. 6 provides the main part of the power conversion circuit 4. The power conversion module 20 provides the inverters 8, 9, the switching switch 10, and the snubber circuits 11, 12. The power conversion module 20 includes two circuit units 201, 202 as described later. The power conversion module 20 includes a charging terminal 113 connected to the circuit unit 202. The power supply device 21 provides the DC power supply 2. The capacitor device 22 provides the smoothing capacitor 7. The external device 23 provides the external device 16.

[0055] The positive electrode of the power supply device 21 is electrically connected to the positive electrode terminal of the capacitor device 22 via the P bus bar 24P. The negative electrode of the power supply device 21 is electrically connected to the negative electrode terminal of the capacitor device 22 via the N bus bar 24N. The positive electrode terminal of the capacitor device 22 is electrically connected to the power conversion module 20 via the P bus bar 25P. The negative electrode terminal of the capacitor device 22 is electrically connected to the power conversion module 20 via the N bus bar 25N. The positive electrode terminal of the external device 23 is electrically connected to the charging terminal 113 of the power conversion module 20 via the P bus bar 26P. The negative electrode terminal of the external device 23 is electrically connected to, for example, the N bus bar 24N via the N bus bar 26N. The negative electrode terminal of the external device 23 is connected to a position closer to the power supply device 21 than the capacitor device 22. Thereby, the inductance can be reduced. Note that the conductive member that electrically connects the corresponding elements is not limited to a bus bar. A cable, a terminal, or the like may be used.

[0056] <Power conversion module> Next, based on FIGS. 7, 8, 9, and 10, the structure of the power conversion module will be described. FIG. 7 is a plan view showing an example of the power conversion module. In FIG. 7, for the sake of convenience, the sealing body is omitted. FIG. 8 is a view in which the cooler, the housing, and the sealing body are omitted from the power conversion module. That is, it is a view showing the circuit elements of the power conversion module. FIG. 9 is a cross-sectional view taken along line IX-IX of FIG. 7. FIG. 10 is a cross-sectional view taken along line X-X of FIG. 7.

[0057] Hereinafter, the thickness direction of the substrate is defined as the Z direction, and one direction orthogonal to the Z direction is defined as the X direction. The direction orthogonal to both the Z direction and the X direction is defined as the Y direction. Unless otherwise specified, the shape viewed from the Z direction in plan view, in other words, the shape along the XY plane defined by the X direction and the Y direction is defined as the planar shape. Also, the plan view from the Z direction may be simply referred to as the plan view.

[0058] The power conversion module 20 provides at least a part of the above-described power conversion circuit 4. The power conversion module 20 includes a cooler 30, a housing 40, a substrate 50, a semiconductor element 60, a snubber component 70, a switching switch 80, a clip 90, a bus bar 100, and a main terminal 110. The power conversion module 20 may further include a circuit board that provides the control unit 15. The power conversion module 20 may be referred to as a semiconductor module, an inverter module, a power conversion device, or the like. A circuit is configured by wiring members including conductors of the substrate 50, the clip 90, and the bus bar 100, and electronic components including the semiconductor element 60, the snubber component 70, and the switching switch 80 mounted on the substrate 50. The main terminal 110 is a terminal for external connection connected to the circuit.

[0059] The cooler 30 supports other elements that make up the power conversion module 20. The cooler 30 cools the circuit elements of the power conversion module 20, such as the semiconductor element 60 and the snubber component 70. The cooler 30 is formed using a metal material such as Al or Cu. The illustrated cooler 30 has a case 31 and a lid 32. The case 31 and the lid 32 form a flow path 33 in a state where the lid 32 is assembled to the case 31. The case 31 has, for example, a box shape with one side open. The lid 32 is fixed to the case 31 so as to close the opening of the case 31. Fins 34, for example, a plurality of pin fins, are provided on the inner surface of the lid 32. The fins 34 are arranged in the flow path 33. The flow path 33 extends, for example, in the X direction.

[0060] The cooler 30 has an inlet pipe 35 and an outlet pipe 36 provided on the side wall of the case 31. In the example shown in FIG. 9, the inlet pipe 35 is attached to the side wall on the substrate 52 side in the X direction, and the outlet pipe 36 is attached to the side wall on the substrate 51 side. The refrigerant 37 is supplied to the flow path 33 through the inlet pipe 35. The refrigerant 37 that has flowed through the flow path 33 is discharged outside the cooler 30 through the outlet pipe 36. As the refrigerant 37, a phase-changing refrigerant such as water or ammonia, or a non-phase-changing refrigerant such as an ethylene glycol-based refrigerant may be used. For example, LLC may be used as the refrigerant 37. LLC is an abbreviation for long life coolant.

[0061] The cooler 30 has a front surface 301 and a back surface 302. The back surface 302 is the surface opposite to the front surface 301 in the Z direction. The substrate 50 is disposed on the front surface 301. The flow path 33 is provided so as to overlap the semiconductor element 60 and the snubber component 70 in a plan view so as to effectively cool the semiconductor element 60, the snubber component 70, etc. The flow path 33 is provided so as to overlap most of the substrate 50 in a plan view.

[0062] The cooler 30 is not limited to the configuration having the flow path 33 described above. As the cooler 30, for example, a heat dissipation member such as a heat sink may be used. A heat sink may sometimes be referred to as a heat dissipation plate, a cooling plate, etc. The heat dissipation member may include heat dissipation fins. When insulation of the substrate 50 with respect to the cooler 30 is not required, a bonding material such as solder or sintered Ag may be interposed between the substrate 50 and the cooler 30. That is, the substrate 50 may be bonded to the front surface 301 of the cooler 30. When insulation is required, an electrically insulating member may be disposed between the substrate 50 and the cooler 30. As the insulating member, for example, a ceramic plate or a resin sheet can be adopted. In order to enhance the thermal conductivity, a TIM such as silicone gel may be adopted. TIM is an abbreviation for Thermal Interface Material. Instead of the cooler 30, a support member that does not provide a cooling function may be used.

[0063] The housing 40 is formed using an electrical insulating material such as resin. The housing 40 may be, for example, a resin molded body. The housing 40 may hold a part of the elements of the power conversion module 20. A part of the elements may be integrally molded with the housing 40 as an insert part. The housing 40 may be fixed to the cooler 30. The housing 40 may be fixed to a case (not shown) that houses the power conversion module 20 together with the cooler 30. The housing 40, in a state of being disposed on one surface of the cooler 30, provides a space for housing the cooler 30, the substrate 50, and electronic components such as the semiconductor element 60 mounted on the substrate 50.

[0064] The illustrated housing 40 includes a frame body 41 and a partition wall 42. The frame body 41 has a predetermined height in the Z direction and is annular in a plan view in the Z direction so as to surround the substrate 50. The frame body 41 may be referred to as an annular wall portion. The frame body 41 may form a substantially rectangular annulus. The rectangular annular frame body 41 has four wall portions 411, 412, 413, and 414.

[0065] The wall portions 411 and 412 generally extend in the X direction. The wall portion 411 and the wall portion 412 are disposed opposite to each other with a predetermined interval in the Y direction. The wall portion 411 is disposed on one end side of the substrate 50 in the Y direction, and the wall portion 412 is disposed on the other end side of the substrate 50. The wall portions 413 and 414 extend in the Y direction. The wall portion 413 is continuous with the wall portions 411 and 412 at one end side in the X direction. The wall portion 414 is continuous with the wall portions 411 and 412 at the other end side in the X direction.

[0066] The partition wall 42 has a predetermined height in the Z direction and is continuous with the frame body 41. The partition wall 42 divides the area defined by the frame body 41. The partition wall 42 may be divided into a plurality of areas according to, for example, the number of substrates 50. The partition wall 42 may be referred to as a partition wall. The partition wall 42 extends in a predetermined direction, and both ends thereof may be continuous with the frame body 41. The illustrated housing 40 has two partition walls 42. The partition wall 42 extends in the Y direction like the wall portions 413 and 414. One of the ends of each partition wall 42 is continuous with the wall portion 411, and the other end is continuous with the wall portion 412. The two partition walls 42 and the wall portions 413 and 414 are arranged side by side in the X direction with a predetermined interval. The partition wall 42 divides the opposing area of the frame body 41 into three areas. The substrate 50 is accommodated in each of the three divided areas.

[0067] As illustrated, a sealing body 43 may be arranged in the accommodation space by the housing 40 and the cooler 30. The sealing body 43 is arranged in the accommodation space and seals the substrate 50, the electronic components mounted on the substrate 50, and the like. The sealing body 43 is, for example, a gel or a potting resin. The sealing body 43 is filled in the accommodation space so as not to exceed the upper end of the frame body 41. Since the partition wall 42 divides the area into a plurality of areas as described above, the influence of the stress caused by the expansion and contraction of the sealing body 43 on the electronic components mounted on the substrate 50 and the electrical connection structure can be reduced as compared with the configuration without division.

[0068] The substrate 50 provides a wiring function. The substrate 50 may be referred to as a wiring board, a printed board, or the like. A semiconductor element 60, a snubber component 70, and a switching switch 80 are mounted on the substrate 50. The substrate 50 has, for example, a substantially rectangular planar shape. The power conversion module 20 may include a single substrate 50 or a plurality of substrates 50. The illustrated substrate 50 includes three substrates 51, 52, and 53.

[0069] The substrate 51, together with the electronic components mounted on the substrate 51, constitutes the circuit on the inverter 8 side. The substrate 52, together with the electronic components mounted on the substrate 52, constitutes the circuit on the inverter 9 side. The substrate 51 has an insulating base material 511 and conductors disposed on the insulating base material 511. The substrate 52 has an insulating base material 521 and conductors disposed on the insulating base material 521. The substrate 53 has an insulating base material 531 and conductors disposed on the insulating base material 531. The insulating base materials 511, 521, and 531 are formed using electrically insulating materials such as ceramics and resins.

[0070] The conductors are formed using metals with good electrical conductivity and thermal conductivity such as Cu and Al as materials. The conductors may be provided with plating films such as Ni-based and Au on their surfaces. The conductors may be disposed on only one side of the insulating base materials 511, 521, and 531, or may be disposed on both the front and back sides. The back surfaces of the insulating base materials 511, 521, and 531 are the surfaces on the cooler 30 side in the Z direction. The conductors may be disposed inside the insulating base materials 511, 521, and 531. That is, the substrates 51, 52, and 53 may be single-sided substrates, double-sided substrates, or multilayer substrates with three or more layers including inner layer wirings. The conductors may include via conductors. The via conductors are formed by disposing conductors such as plating in through holes (vias) formed in the insulating layers constituting the insulating base materials 511, 521, and 531. The via conductors electrically connect the conductors disposed in different layers.

[0071] The substrates 51 and 52 have the same structure as each other. Substrates with the same specifications are used as the substrates 51 and 52. The forming materials of the substrates 51 and 52 are the same as each other, and the planar shapes are also the same as each other. The conductor patterns are also the same as each other. The substrate 53 has a structure different from that of the substrates 51 and 52. The substrates 51, 52, and 53 are all substantially rectangular in plan view. The planar shapes of the substrates 51 and 52 are different from that of the substrate 53. In the Y direction, the lengths of the substrates 51 and 52 are substantially equal to the length of the substrate 53. In the X direction, the length of the substrate 53 is shorter than the lengths of the substrates 51 and 52. The conductor patterns of the substrates 51 and 52 are different from those of the substrate 53. The power conversion module 20 includes two types, a total of three substrates 50.

[0072] The substrates 51, 52, and 53 are arranged on one surface 301 of the cooler 30. The substrates 51, 52, and 53 are arranged side by side in the X direction. The substrate 53 is arranged between the substrates 51 and 52. In the X direction, the substrates 51, 53, and 52 are arranged in this order. The substrates 51 and 52 are arranged in the same direction with respect to the cooler 30.

[0073] The illustrated substrate 51 has a conductor 512 arranged on one surface and a conductor 513 arranged on the back surface. The substrate 52 has a conductor 522 arranged on one surface and a conductor 523 arranged on the back surface. The substrate 53 has a conductor 532 arranged on one surface and a conductor 533 arranged on the back surface. The conductors 513, 523, and 533 are electrically separated from the corresponding conductors 512, 522, and 532 by insulating substrates 511, 521, and 531. The conductors 513, 523, and 533 provide, for example, a heat dissipation function. The substrates 51, 52, and 53 are arranged on the cooler 30 with the conductors 513, 523, and 533 facing the cooler 30 side.

[0074] The conductors 512, 522, and 532 are patterned. The patterned conductors 512, 522, and 532 provide a wiring function. That is, they form a circuit together with the mounted electronic components. The conductor 512 of the substrate 51 includes a P wiring 514, an N wiring 515, an O wiring 516, and a signal wiring 517. Each wiring is electrically separated by a predetermined interval (gap). The P wiring 514 and the N wiring 515 are power supply wirings. The P wiring 514 may be referred to as a positive electrode wiring, a high potential power supply line, etc. The N wiring 515 may be referred to as a negative electrode wiring, a low potential power supply line, etc. The O wiring 516 may be referred to as an output wiring, etc.

[0075] The P wiring 514 is connected to the drain electrode (drain terminal) of the semiconductor element 61H. A P bus bar 101 to which the P terminal 111 is connected is joined to the P wiring 514. The P wiring 514 electrically connects the P terminal 111 and the semiconductor element 61H. The P wiring 514 is provided for each phase of the upper and lower arm circuits 8HL that constitute the inverter 8. The P wiring 514 extends generally in the Y direction. The three P wirings 514 are arranged side by side in the X direction at a predetermined interval. The P wiring 514 has wirings 514A, 514B, and 514C. The wiring 514A extends in the Y direction. The wiring 514B is connected to one of the ends of the wiring 514A, and the wiring 514C is connected to the other end.

[0076] The wiring 514B is arranged near the end of the substrate 51 in the Y direction. The wiring 514B extends in the X direction from the wiring 514A. The P bus bar 101 is joined to the wiring 514B. The wiring 514C is located in the middle of the substrate 51 in the Y direction. The wiring 514C extends in the X direction from the wiring 514A at the end opposite to the wiring 514B. The corresponding semiconductor element 61H (drain terminal) is joined to the wiring 514C.

[0077] Of the three P wirings 514 arranged side by side in the X direction, the P wiring 514 arranged at the end on the substrate 52 side and the P wiring 514 arranged in the middle are arranged in the same direction. In these two P wirings 514, the wirings 514B and 514C extend in a direction away from the substrate 52 from the wiring 514A. The remaining one P wiring 514 is arranged in a mirror-inverted configuration with respect to the other two, that is, in a line-symmetric configuration with respect to a virtual line substantially parallel to the Y direction. In this P wiring 514, the wirings 514B and 514C extend in a direction approaching the substrate 52 from the wiring 514A.

[0078] The N wiring 515 is electrically connected to the source electrode (source terminal) of the semiconductor element 61L via the clip 912. An N bus bar 102 to which the N terminal 112 is connected in series is joined to the N wiring 515. The N wiring 515 electrically connects the N terminal 112 and the semiconductor element 61L. The N wiring 515 has wirings 515A and 515B. The wiring 515A is disposed in the middle of the substrate 51 in the Y direction. The wiring 515A is disposed between the P wiring 514 and the O wiring 516. The wiring 515A extends generally in the X direction. The wiring 515A extends from near one end to near the other end of the substrate 51 in the X direction. Three-phase semiconductor elements 61L are commonly connected to the wiring 515A via corresponding clips 912.

[0079] The wiring 515B extends generally in the Y direction. The wiring 515B has a length substantially equal to that of the P wiring 514 (wiring 514A) in the Y direction. The wiring 515B is alternately disposed with the P wiring 514 in the X direction and is disposed between the P wirings 514. That is, the N wiring 515 has two wirings 515B. In the X direction, the P wiring 514, the wiring 515B, the P wiring 514, the wiring 515B, and the P wiring 514 are arranged in this order. One end of the wiring 515B is disposed near the end of the substrate 51 in the Y direction. An N bus bar 102 is joined to one end of the wiring 515B. The wiring 515A is connected in series to the other end of the wiring 515B.

[0080] The O wiring 516 is connected to the drain electrode (drain terminal) of the semiconductor element 61L. An O terminal 115 is joined to the O wiring 516. The source terminal of the semiconductor element 61H is electrically connected to the O wiring 516 via the clip 911. The O wiring 516 electrically connects the source terminal of the semiconductor element 61H, the drain terminal of the semiconductor element 61L, and the O terminal 115. The O wiring 516 is provided for each phase. The O wiring 516 is arranged in parallel with the corresponding-phase P wiring 514 in the Y direction via the wiring 515A. The O wiring 516 has a substantially L-shaped plane.

[0081] The signal wiring 517 electrically relays between the pads of the semiconductor elements 61H and 61L and a signal terminal (not shown). The signal wiring 517 is electrically connected to the pads, for example, via bonding wires. The signal wiring 517 is, for example, a signal island formed on the corresponding substrate 51. For the sake of convenience, FIG. 5 shows one signal wiring 517 for one semiconductor element 61H, 61L. The signal wiring 517 is aligned with the corresponding semiconductor element 61H in the Y direction. The signal wiring 517 corresponding to the semiconductor element 61H is arranged on the wiring 514B side of the semiconductor element 61H. The signal wiring 517 is aligned with the corresponding semiconductor element 61L in the X direction. The signal wiring 517 corresponding to the semiconductor element 61L is arranged on the substrate 52 side of the semiconductor element 61L.

[0082] As described above, the substrate 52 has the same configuration as the substrate 51. The substrate 52 is arranged in the same orientation as the substrate 51 with respect to the cooler 30. The conductor 522 of the substrate 52 is patterned in the same manner as the conductor 512. The conductor 522 includes a P wiring 524, an N wiring 525, an O wiring 526, and a signal wiring 527. The P wiring 524 has the same configuration as the P wiring 514. The P wiring 524 has wirings 524A, 524B, and 524C. The N wiring 525 has the same configuration as the N wiring 515. The N wiring 525 has wirings 525A and 525B. The P wiring 524 and the N wiring 525 are power supply wirings. The O wiring 526 has the same configuration as the O wiring 516. The signal wiring 527 has the same configuration as the signal wiring 517.

[0083] The conductor 532 of the substrate 53 includes a P wiring 534, an N wiring 535, and a signal wiring 537. The P wiring 534 and the N wiring 535 are power supply wirings that connect the inverter 8 and the inverter 9. The P wiring 534 connects the P wiring 514 of the substrate 51 and the P wiring 524 of the substrate 52. The P wiring 534 extends generally in the arrangement direction of the substrates 51 and 52, that is, in the X direction. The P wiring 534 is divided into two in its extending direction. A P bus bar 105 and a changeover switch 81 are joined to the P wiring 534 on the substrate 51 side. A clip 931 and a P bus bar 106 are joined to the P wiring 534 on the substrate 52 side.

[0084] The N wiring 535 connects the N wiring 515 of the substrate 51 and the N wiring 525 of the substrate 52. The N wiring 535 extends generally in the X direction. The N wiring 535 is divided into two in its extending direction. An N bus bar 107 and a clip 932 are joined to the N wiring 535 on the substrate 51 side. A changeover switch 82 and an N bus bar 108 are joined to the N wiring 535 on the substrate 52 side. The N wiring 535 and the N wirings 515 and 525 (wirings 515A and 525A) are arranged on a virtual straight line substantially parallel to the X direction. The N wiring 535 and the P wiring 534 are arranged offset in the Y direction. The connection positions of the N wiring 535 and the N wirings 515 and 525 are offset in the Y direction with respect to the connection positions of the P wiring 534 and the P wirings 514 and 524.

[0085] The signal wiring 537 electrically relays the pad of the changeover switch 80 and a signal terminal (not shown). The signal wiring 537 is electrically connected to the pad, for example, via a bonding wire. The signal wiring 537 is, for example, a signal island formed on the corresponding substrate 53. For the sake of convenience, in FIG. 5, one signal wiring 537 is shown for one changeover switch 80. The signal wiring 537 is aligned with the changeover switch 80 in the Y direction. The signal wiring 537 is arranged on the side opposite to the N wiring 535 with respect to the changeover switch 81. The signal wiring 537 is arranged on the P wiring 534 side with respect to the changeover switch 82.

[0086] The semiconductor element 60 is an electronic component that provides the inverters 8 and 9. The semiconductor element 60 is formed by forming vertical elements on a semiconductor substrate made of silicon (Si), a wide-bandgap semiconductor having a wider bandgap than silicon, or the like. Examples of the wide-bandgap semiconductor include silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), and diamond. The semiconductor element 60 may be referred to as a power element, a semiconductor chip, or the like.

[0087] The vertical element is configured to allow a main current to flow in the thickness direction of the semiconductor element 60 (semiconductor substrate). The semiconductor element 60 is arranged such that its thickness direction is substantially parallel to the Z direction. The semiconductor element 60 has main electrodes (main terminals) on both surfaces in the thickness direction. In the illustrated power conversion module 20, the semiconductor element 60 is formed by forming an n-channel MOSFET as a vertical element on a semiconductor substrate made of SiC. The semiconductor element 60 has a drain electrode (drain terminal) on the lower surface facing the substrate 50 (51, 52), and a source electrode (source terminal) on the upper surface opposite to the lower surface.

[0088] When the MOSFET is turned on, a current (main current) flows between the main terminals, that is, between the drain terminal and the source terminal. When the diode is a parasitic diode, the source terminal also serves as the anode terminal, and the drain terminal also serves as the cathode terminal. The diode may be formed on a separate chip from the MOSFET. The drain terminal is the main electrode on the high-potential side, and the source terminal is the main terminal on the low-potential side. The drain terminal is formed over substantially the entire lower surface. The source terminal is formed on a part of the upper surface.

[0089] The semiconductor element 60 has a substantially rectangular planar shape. The semiconductor element 60 has pads, which are signal terminals, on the upper surface. The pads are formed at positions different from the source terminal on the upper surface. The pads include at least gate pads.

[0090] The plurality of semiconductor elements 60 includes a semiconductor element 61H that constitutes the upper arm 8H, a semiconductor element 61L that constitutes the lower arm 8L, a semiconductor element 62H that constitutes the upper arm 9H, and a semiconductor element 62L that constitutes the lower arm 9L. The semiconductor element 60 includes three semiconductor elements 61H, 61L, 62H, and 62L each. The semiconductor elements 61H, 61L, 62H, and 62L are provided for each phase. One semiconductor element 60 provides one arm. Hereinafter, the semiconductor elements 61H and 62H may be referred to as upper arm elements 61H and 62H. The semiconductor elements 61L and 62L may be referred to as lower arm elements 61L and 62L.

[0091] The semiconductor elements 61H and 61L are mounted on the substrate 51. The semiconductor element 61H is arranged so as to overlap with the wiring 514C of the P wiring 514 in a plan view. The drain terminal of the semiconductor element 61H is joined to the P wiring 514 via a bonding material such as solder (not shown). The semiconductor element 61L is arranged so as to overlap with the O wiring 516 in a plan view. The drain terminal of the semiconductor element 61L is joined to the O wiring 516 via a bonding material (not shown).

[0092] The semiconductor elements 61H of each phase are arranged side by side in the X direction. The semiconductor elements 61L of each phase are arranged side by side in the X direction. The semiconductor elements 61H and 61L of the corresponding phases are arranged side by side substantially in the Y direction. The semiconductor elements 61H and 61L of the corresponding phases are arranged with a shift in the X direction so that only a part thereof faces in the Y direction. The arrangement of the semiconductor elements 61H and 61L is shifted by 90 degrees around an axis substantially parallel to the Z direction. The pads of the semiconductor element 61H are arranged on the wiring 514B side in the Y direction. The pads of the semiconductor element 61L are arranged on the substrate 52 side in the X direction.

[0093] The semiconductor elements 62H and 62L are mounted on the substrate 52. The semiconductor element 62H has the same structure as the semiconductor element 61H. That is, semiconductor elements of the same specification are used as the semiconductor elements 61H and 62H. The arrangement of the semiconductor element 62H on the substrate 52 is the same as the arrangement of the semiconductor element 61H on the substrate 51. The semiconductor element 62L has the same structure as the semiconductor element 61L. That is, semiconductor elements of the same specification are used as the semiconductor elements 61L and 62L. The arrangement of the semiconductor element 62L on the substrate 52 is the same as the arrangement of the semiconductor element 61L on the substrate 51. The semiconductor elements 61H, 61L, 62H, and 62L have a common specification.

[0094] The semiconductor element 62H is arranged so as to overlap with the wiring 524C in a plan view. The drain terminal of the semiconductor element 62H is joined to the wiring 524C via a bonding material (not shown). The semiconductor element 62L is arranged so as to overlap with the O wiring 526 in a plan view. The drain terminal of the semiconductor element 62L is joined to the O wiring 526 via a bonding material (not shown).

[0095] The semiconductor elements 62H of each phase are arranged side by side in the X direction. The semiconductor elements 62L of each phase are arranged side by side in the X direction. The semiconductor elements 62H and 62L of the corresponding phases are generally arranged side by side in the Y direction. The semiconductor elements 62H and 62L of the corresponding phases are arranged with a shift in the X direction so that only a part thereof faces in the Y direction. The arrangement of the semiconductor elements 62H and 62L is shifted by 90 degrees around an axis substantially parallel to the Z direction. The pads of the semiconductor element 62H are arranged on the wiring 524B side in the Y direction. The pads of the semiconductor element 62L are arranged on the side opposite to the substrate 51 in the X direction.

[0096] The snubber component 70 is an electronic component that provides a snubber circuit. The snubber component 70 includes a snubber component 71 that provides the snubber circuit 12 and a snubber component 72 that provides the snubber circuit 11. For the sake of simplicity, FIGS. 7 to 9 show it in a simplified manner. The snubber component 71 has at least a capacitor to provide the snubber circuit 12. The snubber component 71 is mounted on the substrate 51. The snubber component 71 is connected in parallel to the upper and lower arm circuits 8HL as described above. The snubber component 71 electrically bridges the P wiring 514 and the N wiring 515. In the illustrated power conversion module 20, the snubber component 71 is provided for each phase. The snubber component 71 electrically bridges the wiring 514A and the wiring 515B. The snubber component 71 electrically bridges the P wiring 514 and the N wiring 515 at a position closer to the wiring 514B than the semiconductor element 61H. Among the two wirings 515B, one snubber component 71 is connected to the wiring 515B closer to the substrate 52, and two snubber components 71 are commonly connected to the wiring 515B farther from the substrate 52. The snubber components 71 of each phase are arranged in the X direction.

[0097] The snubber component 72 has the same structure as the snubber component 71. That is, snubber components of the same specification are used as the snubber components 71 and 72. The arrangement of the snubber component 72 on the substrate 52 is the same as the arrangement of the snubber component 71 on the substrate 51. In the illustrated power conversion module 20, the snubber component 72 is provided for each phase. The snubber component 72 electrically bridges the wiring 524A and the wiring 525B. The snubber component 72 electrically bridges the P wiring 524 and the N wiring 525 at a position closer to the wiring 524B than the semiconductor element 62H. Among the two wirings 525B, one snubber component 72 is connected to the wiring 525B farther from the substrate 51, and two snubber components 72 are commonly connected to the wiring 525B farther from the substrate 51. The snubber components 72 of each phase are arranged in the X direction.

[0098] The switching switch 80 provides the switching switch 10 in the power conversion circuit 4. The switching switch 80 is formed by forming a switching element on a semiconductor substrate. In the exemplary power conversion module 20, the switching switch 80 has the same configuration as the semiconductor element 60. The switching switch 80 is formed by forming a MOSFET on a semiconductor substrate. A parasitic diode is connected in anti-parallel to the MOSFET.

[0099] In the exemplary power conversion module 20, the switching switch 80 is mounted on the substrate 53. The switching switch 80 includes switching switches 81 and 82. The switching switches 81 and 28 are arranged generally in the Y direction. The switching switch 81 is provided on the P wiring 534. The switching switch 81 is arranged so as to overlap the P wiring 534 on the substrate 51 side in a plan view. The drain terminal of the switching switch 81 is joined to the P wiring 534. The source terminal of the switching switch 81 is connected to the N wiring 535 on the substrate 52 side via the clip 931. The pad of the switching switch 81 is arranged on the side of the corresponding signal wiring 537 in the Y direction.

[0100] The switching switch 82 is provided on the N wiring 535. The switching switch 82 is arranged so as to overlap the N wiring 535 on the substrate 52 side in a plan view. The drain terminal of the switching switch 82 is joined to the N wiring 535. The source terminal of the switching switch 82 is connected to the N wiring 535 on the substrate 51 side via the clip 932. The pad of the switching switch 82 is arranged on the side of the corresponding signal wiring 537 in the Y direction.

[0101] Clip 90 bridges an electronic component and a conductor (wiring). Clip 90 may be referred to as a bridging member, a relay member, a metal bridge, etc. Clip 90 is a metal plate material having a base material of a metal with good conductivity such as Cu or a Cu alloy. Clip 90 may be formed by punching and pressing a metal plate of a predetermined thickness. Clip 90 may be formed using a deformed material with a partially different thickness. Clip 90 may be one having a film applied to the surface of the base material by surface treatment. Clip 90 may have a plating film such as Ni or Au on the surface. Clip 90 may have a Ni plating film containing P formed on the base material. The NiP film is formed, for example, by an electroless plating method. As the base material, Ag, Au, Al, Mg, etc. may be used instead of Cu. As the film added on the base material, Sn, Ag, etc. may be used instead of Ni or Au.

[0102] Clip 90 includes clips 911 and 912 mounted on substrate 51, clips 921 and 922 mounted on substrate 52, and clips 931 and 932 mounted on substrate 53. Clip 911 is connected to semiconductor element 61H. Clip 911 is provided individually for semiconductor element 61H. Clip 911 generally extends in the Y direction and electrically connects the source terminal of semiconductor element 61H and O wiring 516. Clip 912 is connected to semiconductor element 61L. Clip 912 is provided individually for semiconductor element 61L. Clip 912 generally extends in the Y direction and electrically connects the source terminal of semiconductor element 61L and wiring 515A of N wiring 515. Clips 911 and 912, together with semiconductor elements 61H and 61L, P wiring 514, N wiring 515, and O wiring 516, constitute inverter 8.

[0103] Clip 921 has the same structure as clip 911. That is, clips of the same specification are used as clips 911 and 921. The arrangement of clip 921 on substrate 52 is the same as the arrangement of clip 911 on substrate 51. In the illustrated power conversion module 20, clip 922 has the same structure as clip 912. That is, clips of the same specification are used as clips 912 and 922. The arrangement of clip 922 on substrate 52 is the same as the arrangement of clip 912 on substrate 51.

[0104] In the illustrated power conversion module 20, clip 921 is connected to semiconductor element 62H. Clip 921 is provided individually for semiconductor element 62H. Clip 921 extends generally in the Y direction and electrically connects the source terminal of semiconductor element 62H and O wiring 526. Clip 922 is connected to semiconductor element 62L. Clip 922 is provided individually for semiconductor element 62L. Clip 922 extends generally in the Y direction and electrically connects the source terminal of semiconductor element 62L and wiring 525A of N wiring 525. Clips 921 and 922, together with semiconductor elements 62H and 62L, P wiring 524, N wiring 525, and O wiring 526, constitute inverter 9.

[0105] Clip 931 is connected to changeover switch 81. Clip 931 extends generally in the X direction. Clip 931 electrically connects the source terminal of changeover switch 81 mounted on P wiring 534 on the substrate 51 side and P wiring 534 on the substrate 52 side. Clip 932 is connected to changeover switch 82. Clip 932 extends generally in the X direction. Clip 932 electrically connects the source terminal of changeover switch 82 mounted on N wiring 535 on the substrate 52 side and N wiring 535 on the substrate 51 side.

[0106] The bus bar 100 electrically connects the conductors (wiring) of the substrate 50. The bus bar 100 electrically connects the conductor and the main terminal 110. The bus bar 100 may be referred to as a lead, a wiring member, etc. The bus bar 100 is a plate material formed using a metal material with good conductivity such as Cu. In the exemplary power conversion module 20, the bus bar 100 is held by the housing 40. The bus bar 100 includes a P bus bar 101 and an N bus bar 102 mounted on the substrate 51, and a P bus bar 103 and an N bus bar 104 mounted on the substrate 52.

[0107] The P bus bar 101 commonly connects the P wirings 514 provided for each phase. The connection portion of the P bus bar 101 with the substrate 51 branches into three, and each is joined to the corresponding wiring 514B. In the Y direction, P terminals 111 are arranged in series at the end of the P bus bar 101 on the side opposite to the substrate 51. The N bus bar 102 commonly connects a plurality of wirings 515B. The connection portion of the N bus bar 102 with the substrate 51 branches into two, and each is joined to the corresponding wiring 515B. In the Y direction, N terminals 112 are arranged in series at the end of the N bus bar 102 on the side opposite to the substrate 51.

[0108] The P bus bar 103 has the same structure as the P bus bar 101. That is, bus bars of the same specification are used as the P bus bars 101 and 103. The arrangement of the P bus bar 103 on the substrate 52 is the same as the arrangement of the P bus bar 101 on the substrate 51. The N bus bar 104 has the same structure as the N bus bar 102. That is, bus bars of the same specification are used as the N bus bars 102 and 104. The arrangement of the N bus bar 104 on the substrate 52 is the same as the arrangement of the N bus bar 102 on the substrate 51.

[0109] The P bus bar 103 commonly connects the P wirings 524 provided for each phase. The connection portion of the P bus bar 103 with the substrate 52 branches into three, and each is joined to the corresponding wiring 524B. In the Y direction, charging terminals 113 are arrayed at the end of the P bus bar 103 on the side opposite to the substrate 52. The N bus bar 104 commonly connects a plurality of wirings 525B. The connection portion of the N bus bar 104 with the substrate 52 branches into two, and each is joined to the corresponding wiring 525B.

[0110] The P bus bars 101, 103 and the N bus bars 102, 104 are held (inserted) in the wall portion 411 of the frame body 41. The substrate connection portions of the P bus bars 101, 103 and the N bus bars 102, 104 protrude from the wall portion 411 into the accommodation space and are joined to the corresponding wirings.

[0111] The bus bar 100 further includes P bus bars 105, 106 and N bus bars 107, 108. The P bus bar 105 extends in the X direction in a plan view. One end of the P bus bar 105 is joined to the P wiring 514 (wiring 514A) closest to the substrate 52, and the other end is joined to the P wiring 534. The P bus bar 106 extends in the X direction in a plan view. One end of the P bus bar 106 is joined to the P wiring 524 (wiring 524A) closest to the substrate 51, and the other end is joined to the P wiring 534. The N bus bar 107 extends in the X direction in a plan view. One end of the N bus bar 107 is joined to the end of the N wiring 515 (wiring 515A) on the substrate 52 side, and the other end is joined to the N wiring 535. The N bus bar 108 extends in the X direction in a plan view. One end of the N bus bar 108 is joined to the end of the N wiring 525 (wiring 525A) on the substrate 51 side, and the other end is joined to the N wiring 535.

[0112] The P bus bar 105 and the N bus bar 107 are held by the partition wall 42 located between the substrates 51 and 53. The P bus bar 106 and the N bus bar 108 are held by the partition wall 42 located between the substrates 52 and 53. The substrate connection portions of the P bus bars 105, 106 and the N bus bars 107, 108 project from the partition wall 42 into the accommodation space and are joined to the corresponding wirings.

[0113] The main terminal 110 is a plate material formed using a metal material with good conductivity such as Cu, like the bus bar 100. The main terminal 110 is an external connection terminal that is electrically connected to the main terminal (main electrode) of the semiconductor element 60. The main terminal 110 includes a P terminal 111 and an N terminal 112 that are power supply terminals, a charging terminal 113, and O terminals 115, 116. In FIG. 8, the boundary between the bus bar 100 and the main terminal 110 is indicated by a two-dot chain line.

[0114] The power supply terminal is an external connection terminal that is electrically connected to the capacitor device 22 (smoothing capacitor 7) described above. The P terminal 111 is an external connection terminal that is connected to the positive electrode terminal of the capacitor device 22 via the P bus bar 25P. The P terminal 111 is continuous with the P bus bar 101. The P terminal 111 may be continuously and integrally continuous with the P bus bar 101 or may be continuous by joining. The P terminal 111 may be referred to as a positive electrode terminal, a high-potential power supply terminal, etc. The P terminal 111 is mounted on the substrate 51 via the P bus bar 101. The P terminal 111 extends outward in the Y direction from the wall portion 411 of the frame body 41 to a position where it does not overlap the cooler 30 in a plan view.

[0115] The N terminal 112 is an external connection terminal connected to the negative terminal of the capacitor device 22 via the N bus bar 25N. The N terminal 112 is continuous with the N bus bar 102. The N terminal 112 may be continuously and integrally continuous with the N bus bar 102, or may be continuous by joining. The N terminal 112 may be referred to as a negative terminal, a low-potential power supply terminal, etc. The N terminal 112 is mounted on the substrate 51 via the N bus bar 102. The N terminal 112 extends outward in the Y direction from the wall portion 411 of the frame body 41 to a position that does not overlap with the cooler 30 in a plan view. The N terminal 112 is located on the substrate 52 side of the P terminal 111 in the X direction.

[0116] The charging terminal 113 is an external connection terminal connected to the positive terminal of the external device 23 via the P bus bar 26P. The charging terminal 113 is continuous with the P bus bar 103. Since the charging terminal 113 is electrically connected to the P wiring 524 via the P bus bar 103, it may be referred to as a P terminal. The charging terminal 113 may be continuously and integrally continuous with the P bus bar 103, or may be continuous by joining. The charging terminal 113 is mounted on the substrate 52 via the P bus bar 103. The charging terminal 113 extends outward in the Y direction from the wall portion 411 of the frame body 41 to a position that does not overlap with the cooler 30 in a plan view.

[0117] In a plan view, the position of the charging terminal 113 with respect to the substrate 52 is different from the position of the P terminal 111 with respect to the substrate 51. The connection position of the charging terminal 113 with respect to the P bus bar 103 is different from the connection position of the P terminal 111 with respect to the P bus bar 101. As shown in FIGS. 7 and 8, the P terminal 111 is continuous near the end on the wall portion 413 side of the P bus bar 101. The charging terminal 113 is continuous near the end on the wall portion 414 side of the P bus bar 103. In the X direction, the P terminal 111, the N terminal 112, and the charging terminal 113 are arranged in this order. That is, the charging terminal 113 is located at one end in the arrangement direction, and the P terminal 111 is located at the other end.

[0118] The O terminals 115 and 116 are electrically connected to the windings 3U, 3V, and 3W of the corresponding phases of the rotating electrical machine 3. The O terminals 115 and 116 may be referred to as output terminals, AC terminals, etc. The O terminal 115 is joined to the O wiring 516. The O terminal 115 is provided for each phase of the upper and lower arm circuits 8HL. The O terminal 115, together with the O wiring 516, provides the output line 13. The O terminal 115 extends generally in the Y direction from the joint with the O wiring 516. The O terminal 115 extends outward in the Y direction from the wall portion 412 of the frame body 41 to a position where it does not overlap with the cooler 30 in a plan view.

[0119] The O terminal 116 is joined to the O wiring 526. The O terminal 116 is provided for each phase of the upper and lower arm circuits 9HL. The O terminal 116, together with the O wiring 526, provides the output line 14. The O terminal 116 extends generally in the Y direction from the joint with the O wiring 526. The O terminal 116 extends outward in the Y direction from the wall portion 412 to a position where it does not overlap with the cooler 30 in a plan view. In the illustrated power conversion module 20, the O terminal 116 has the same structure as the O terminal 115. That is, external connection terminals of the same specification are used as the O terminals 115 and 116. The arrangement of the O terminal 116 on the substrate 52 is the same as the arrangement of the O terminal 115 on the substrate 51.

[0120] The power conversion module 20 includes two circuit units 201 and 202 that provide the power conversion circuit 4. The circuit unit 201 includes the substrate 51 and components mounted on the substrate 51. The components mounted on the substrate 51 included in the circuit unit 201 include semiconductor elements 61H, 61L, snubber components 71, clips 911, 912, a P bus bar 101, and an N bus bar 102. The circuit unit 201 provides the inverter 8 and the snubber circuit 12. The circuit unit 202 includes the substrate 52 and components mounted on the substrate 52. The components mounted on the substrate 52 included in the circuit unit 202 include semiconductor elements 62H, 62L, snubber components 72, clips 921, 922, a P bus bar 103, and an N bus bar 104. The circuit unit 202 provides the inverter 9 and the snubber circuit 11.

[0121] As described above, the circuit units 201 and 202 are configured, and the elements related to each other have a common structure. Also, the arrangement of the components mounted on the substrate 52 is substantially the same as the arrangement of the components mounted on the substrate 51. Therefore, the circuit units 201 and 202 have a common structure with each other. Circuit units with the same specifications are used as the circuit units 201 and 202. Note that "common" or "identical" may include errors within the range of manufacturing variations.

[0122] <Summary of the First Embodiment> As described above, the P terminal 111 and the N terminal 112, which are power supply terminals, are connected to the capacitor device 22 that provides the smoothing capacitor 7. As shown in FIG. 6, the power conversion module 20 and the capacitor device 22 are arranged side by side in the Y direction. The capacitor device 22 has conductors (bus bars) connected to capacitor elements, and these conductors function as antennas when the semiconductor element 60 switches, thereby radiating electromagnetic noise. For this reason, when the semiconductor element 60 is located near the capacitor device 22, there is a risk that the semiconductor element 60 may turn on erroneously.

[0123] According to the power conversion module 20 of the present embodiment, the semiconductor elements 61H and 61L (first semiconductor elements) that constitute the inverter 8 (first inverter) and the semiconductor elements 62H and 62L (second semiconductor elements) that constitute the inverter 9 (second inverter) are arranged side by side in the X direction, which is a predetermined direction. That is, the inverters 8 and 9 are arranged side by side in the X direction. The semiconductor element 60 and the P terminal 111 and the N terminal 112, which are power supply terminals, are arranged side by side in the Y direction, which is an orthogonal direction. That is, the capacitor device 22 and the inverters 8 and 9 are arranged side by side in the Y direction. And the semiconductor element 60 electrically connected to the switching switch 80 via the power supply wiring is arranged at a position farther from the power supply terminal in the Y direction than the corresponding switching switch 80. The power supply wiring includes P wirings 514, 524, 534 and N wirings 515, 525, 535.

[0124] For example, the semiconductor elements 61H and 62H are arranged at positions farther from the power supply terminal than the corresponding switching switches 81. The semiconductor elements 61L and 62L are arranged at positions farther from the power supply terminal than the corresponding switching switches 82. In this way, since the semiconductor element 60 is separated from the capacitor device 22, it is possible to suppress the semiconductor element 60 from being accidentally turned on due to the electromagnetic noise radiated by the capacitor device 22.

[0125] As illustrated, in a configuration including a charging terminal 113 that is electrically connected to the external device 23 for charging, the semiconductor element 62L (second lower arm element) may be arranged at a position farther from the power supply terminal in the Y direction than the semiconductor element 62H (second upper arm element). As described above, the upper arm 9H of the inverter 9 is turned on during charging. In this state, if the lower arm 9L is accidentally turned on due to the electromagnetic noise radiated by the capacitor device 22, a short circuit between the upper and lower arms will occur. By separating the semiconductor element 62L from the capacitor device 22, it is possible to suppress the semiconductor element 62L from being accidentally turned on during charging.

[0126] As illustrated, the semiconductor element 61L (first lower arm element) may be arranged at a position farther from the power supply terminal in the Y direction than the semiconductor element 61H (first upper arm element). According to this, by separating the semiconductor element 61L from the capacitor device 22, it is possible to suppress the semiconductor element 61L from being accidentally turned on.

[0127] As illustrated, the switching switch 80 may be arranged between the first semiconductor element and the second semiconductor element in the X direction, that is, between the inverter 8 and the inverter 9. According to this, the length of the power supply wiring connecting the inverters 8 and 9 can be made shorter, and thus the inductance can be further reduced. Also, since it is not necessary to route the power supply wiring in the Z direction, the power conversion module 20 can be made thinner.

[0128] As illustrated, only the P terminal 111 and the N terminal 112 may be included as power supply terminals. By providing the switching switch 82(10B) on the N wiring 535 connecting the inverters 8 and 9, the N terminal for connecting the inverter 9 to the smoothing capacitor 7 (capacitor device 22) becomes unnecessary, and the N terminal can be eliminated. As a result, the configuration can be simplified.

[0129] Here, FIGS. 11 and 12 show reference examples of the power conversion circuit. FIG. 11 shows an example of the energization pattern during star connection drive in the reference example. FIG. 12 shows an energization pattern at a timing different from that in FIG. 4 during star connection drive. In the reference example, an "r" is added to the end of the reference numerals of the related elements shown in the present embodiment.

[0130] The control unit performs star connection drive while switching between a plurality of energization patterns. The control unit performs star connection drive using, for example, the PWM control method. PWM is an abbreviation for Pulse Width Modulation. The plurality of energization patterns include the zero vector energization patterns shown in FIGS. 11 and 12. The energization pattern shown in FIG. 11 is a pattern in which all the upper arms 8Hr of the inverter 8r are turned on and all the lower arms 8Lr are turned off among the zero vectors. The energization pattern shown in FIG. 9 is a pattern in which all the lower arms 8Lr of the inverter 8r are turned on and all the upper arms 8Hr are turned off among the zero vectors. The power supply line 5r has a wiring 5A1r connecting the inverter 8 and the switching switch 10r and a wiring 5A2r connecting the switching switch 10r and the inverter 9r.

[0131] As shown in FIGS. 11 and 12, in the power conversion circuit 4r of the reference example, the snubber circuit 11r connected in parallel to the inverter 9r is connected to the wiring 5A2r that connects the switching switch 10r and the inverter 9r among the power supply lines 5r. One end of the snubber circuit 11r is connected to the wiring 5A2r of the power supply line 5r, and the other end is connected to the power supply line 6r. For the sake of convenience, in FIGS. 11 and 12, the smoothing capacitor and the snubber circuit connected in parallel to the inverter 8r are omitted. Also, the snubber circuit 11r is common to each phase of the inverter 9r.

[0132] In the example shown in FIGS. 11 and 12, the inverter 9r is neutralized by turning on all the upper arms 9Hr of the three phases of the inverter 9r. In this state, as shown in FIG. 11, when all the upper arms 8Hr of the three phases of the inverter 8r are turned on, the voltage across both ends of the capacitor 11Cr becomes approximately equal to the supply voltage of the DC power supply 2r, that is, the power supply voltage Vdc. Also, as shown in FIG. 12, when all the lower arms 8Lr of the three phases of the inverter 8r are turned on, the voltage across both ends of the capacitor 11Cr becomes approximately 0V (zero volts).

[0133] As described above, in order to perform star connection driving while switching a plurality of energization patterns, during star connection driving, the voltage across both ends of the capacitor 11Cr of the snubber circuit 11r fluctuates. The voltage across both ends of the capacitor 11Cr fluctuates in the range from 0V to Vdc. Thus, since the capacitor 11Cr is charged and discharged during star connection driving, the power conversion efficiency becomes low. The resistor 11Rr of the snubber circuit 11r consumes the energy stored in the capacitor 11Cr and generates heat. This heat affects the capacitor 11Cr.

[0134] As illustrated, in the configuration where the switching switch 82(10B) is provided on the N wiring 535, during star connection driving, the MOSFET of the switching switch 10B is off, that is, the switching switch 10 is in an open state. Therefore, the potential on the negative electrode side of the capacitor 11C provided in the snubber circuit 11 becomes a floating potential. Thus, fluctuations in the voltage across the capacitor 11C during star connection driving can be suppressed. That is, charging and discharging of the capacitor 11C can be suppressed. Therefore, the power conversion efficiency can be improved. Also, heat generation in the resistor 11R due to charging and discharging can be suppressed, and the capacitor 11C can be protected from the influence of heat. It is suitable not only for open connection driving but also for star connection driving.

[0135] Note that in this embodiment, an example of the clip 90 is shown as the bridging member, but it is not limited to this. Instead of the clip 90, a bonding wire or the like may be used. However, using the clip 90 can reduce the inductance.

[0136] (Second Embodiment) This embodiment is a modification based on the preceding embodiment, and the description of the preceding embodiment can be incorporated by reference. In the preceding embodiment, the switching switch 10 was provided on the power supply lines 5 and 6. Instead, the switching switch 10 may be provided only on the power supply line 5.

[0137] <Power Conversion Circuit> FIG. 13 shows the power conversion circuit 4 provided by the power conversion module 20 according to this embodiment. In the power conversion circuit 4 shown in FIG. 13, the switching switch 10 is arranged only on the power supply line 5 (wiring 5A) and not on the power supply line 6. The switching switch 10 is arranged such that the drain terminal of the MOSFET faces the inverter 8 side and the source terminal faces the inverter 9 side. Other configurations are the same as those of the power conversion circuit (see FIG. 1) shown in the preceding embodiment.

[0138] <Power Conversion Module> FIG. 14 is a view of the power conversion module 20 according to the present embodiment, in which the cooler 30, the housing 40, and the sealing body 43 are omitted. FIG. 14 corresponds to FIG. 8. Although illustration is omitted, the power conversion module 20 includes the cooler 30, the housing 40, and the sealing body 43 as in the previous embodiment.

[0139] The power conversion module 20 provides the power conversion circuit 4 shown in FIG. 13. In the power conversion module 20, the switching switch 80 is disposed on the P wiring 534 and not on the N wiring 535. The power conversion module 20 has a configuration in which the switching switch 82, the clip 932, and the signal wiring 537 corresponding to the switching switch 82 are excluded from the configuration shown in the previous embodiment. The N wiring 535 is not divided into two and extends from near one end to near the other end of the substrate 53.

[0140] The power conversion module 20 includes an N terminal 114 as a power supply terminal. The N terminal 114 is an external connection terminal connected to the negative electrode terminal of the capacitor device 22, like the N terminal 112. The N terminal 114 is continuous with the N bus bar 104. The N terminal 114 may be continuously and integrally continuous with the N bus bar 104 or may be continuous by joining. The N terminal 114 is mounted on the substrate 52 via the N bus bar 104. The N terminal 114 extends outward in the Y direction from the wall portion 411 of the frame body 41 to a position where it does not overlap with the cooler 30 in plan view. In plan view, the position of the N terminal 114 with respect to the substrate 52 is different from the position of the N terminal 112 with respect to the substrate 51. In the X direction, the P terminal 111, the N terminal 112, the N terminal 114, and the charging terminal 113 are arranged in this order. Other configurations are the same as those of the power conversion module 20 (see FIGS. 7 to 9) shown in the previous embodiment.

[0141] <Summary of the Second Embodiment> According to the power conversion module 20 of this embodiment, the same effects as the configuration shown in the previous embodiment can be achieved. For example, semiconductor elements 61H and 62H that are electrically connected to the switching switch 80 via the P wiring 534 are arranged at a position farther from the power supply terminal than the switching switch 80. Therefore, it is possible to suppress the semiconductor elements 61H and 62H from being erroneously turned on by electromagnetic noise. Also, the semiconductor elements 61L and 62L are arranged at a position farther from the power supply terminal than the semiconductor elements 61H and 62H in the Y direction. It is possible to suppress the semiconductor elements 61L and 62L from being erroneously turned on by electromagnetic noise.

[0142] As illustrated, the switching switch 80 may be provided on one of the P wiring 534 and the N wiring 535. In the example shown in FIG. 14, the switching switch 80 is provided on the P wiring 534 and not on the N wiring 535. By providing the N terminal 114, the inductance can be reduced. Since the switching switch 10 is not provided on the power supply line 6, only open-wire driving may be executed.

[0143] (Third Embodiment) This embodiment is a modification based on the preceding embodiment, and the description of the preceding embodiment can be incorporated. In the preceding embodiment, the snubber component 72 was mounted on the common substrate 52 of the semiconductor elements 62H and 62L that constitute the inverter 9. Instead, the snubber component 72 may be mounted on the substrate 53. Also, the connection position of the snubber circuit 11 may be different from that in the preceding embodiment.

[0144] <Power Conversion Circuit> FIG. 15 shows a power conversion circuit 4 provided by the power conversion module 20 according to this embodiment. In the power conversion circuit 4, the switching switch 10 is arranged only on the power supply line 5 in the same configuration as shown in the second embodiment, and is not arranged on the power supply line 6. The switching switch 10 is arranged such that the drain terminal of the MOSFET faces the inverter 8 side and the source terminal faces the inverter 9 side.

[0145] The snubber circuit 11 is not provided for each phase of the upper and lower arm circuits 9HL, but is provided collectively. A common snubber circuit 11 is connected in parallel to the three-phase upper and lower arm circuits 9HL. The power line 5 has a wiring 5A1 connecting the inverter 8 and the switching switch 10, and a wiring 5A2 connecting the switching switch 10 and the inverter 9. The wirings 5A1 and 5A2 correspond to the wiring 5A shown in the previous embodiment. One end of the snubber circuit 11 is connected to the wiring 5A1 among the wirings 5A1 and 5A2. The other end is connected to the power line 6. Other configurations are the same as those of the power conversion circuit (see FIG. 13) shown in the previous embodiment.

[0146] <Power conversion module> FIG. 16 is a view in which the cooler 30, the housing 40, and the sealing body 43 are omitted in the power conversion module 20 according to the present embodiment. FIG. 16 corresponds to FIG. 8. Although illustration is omitted, the power conversion module 20 includes a cooler 30, a housing 40, and a sealing body 43 in the same manner as the previous embodiment.

[0147] The power conversion module 20 provides the power conversion circuit 4 shown in FIG. 15. The power conversion module 20 includes a switching switch 80 disposed on the P wiring 534, in the same configuration as that shown in the second embodiment. The power conversion module 20 includes an N terminal 114 as a power supply terminal.

[0148] The snubber component 72 is mounted on the substrate 53 instead of the substrate 52. The circuit unit 202 has a structure in which the snubber component 72 is excluded from the configuration shown in the previous embodiment. On the substrate 52, the P wiring 524 and the N wiring 525 (wiring 525B) are arranged side by side in the X direction. The P wiring 524 and the N wiring 525 are running parallel.

[0149] The substrate 53, and the P wiring 534 has wirings 534A and 534B. The wiring 534A electrically connects the inverter 8 and the drain terminal of the switching switch 80. The wiring 534B electrically connects the source terminal of the switching switch 80 and the inverter 9. The wiring 534A provides the wiring 5A1, and the wiring 534B provides the wiring 5A2.

[0150] One end of the wiring 534A is joined with the P bus bar 105, and the other end of the wiring 534A is joined with the drain terminal of the switching switch 80. One end of the wiring 534B is joined with the clip 931, and the other end of the wiring 534B is joined with the P bus bar 106. The snubber component 72 is connected to a position between the joining portion of the P bus bar 105 and the joining portion of the switching switch 80 in the wiring 534A. The snubber component 72 is connected to the wiring 534A and the N wiring 535. The snubber component 72 is aligned with the switching switch 80 in the Y direction. Other configurations are the same as those of the power conversion module 20 (see FIG. 14) shown in the previous embodiment.

[0151] <Summary of the Third Embodiment> According to the power conversion module 20 of the present embodiment, the same effects as those of the configuration shown in the previous embodiment can be achieved. For example, the semiconductor elements 61H and 62H electrically connected to the switching switch 80 via the P wiring 534 are arranged at positions farther from the power supply terminal than the switching switch 80. Therefore, it is possible to suppress the semiconductor elements 61H and 62H from being erroneously turned on by electromagnetic noise. Further, the semiconductor elements 61L and 62L are arranged at positions farther from the power supply terminal than the semiconductor elements 61H and 62H in the Y direction. It is possible to suppress the semiconductor elements 61L and 62L from being erroneously turned on by electromagnetic noise.

[0152] As illustrated, a snubber component 72 mounted on the substrate 53 and connected in parallel with the inverter 9 may be provided. Since the snubber component 72 is mounted on the same substrate 53 as the switching switch 80, it is easy to adjust the connection position of the snubber component 72. The connection position of the snubber component 72 can be changed only by changing the pattern of the conductor 532.

[0153] As illustrated, the changeover switch 80 may be arranged on one of the P wiring 534 and the N wiring 535 (power supply wiring). The snubber component 72 may be connected to a portion of the power supply wiring that connects the changeover switch 80 and the inverter 8. In the example shown in FIG. 16, the changeover switch 80 is arranged on the P wiring 534, and the snubber component 72 is connected to the wiring 534A. Thereby, when driving in star connection, the voltage across the capacitor 11C is clamped to the power supply voltage of the DC power supply 2 (the voltage across the smoothing capacitor 7). Therefore, the charging and discharging operation of the capacitor 11C can be suppressed during star connection driving, and the power conversion efficiency can be improved. Even if the changeover switch 80 is not provided on the N wiring 535, the charging and discharging operation of the capacitor 11C can be suppressed during star connection driving.

[0154] (Fourth Embodiment) This embodiment is a modification based on the preceding embodiment, and the description of the preceding embodiment can be incorporated. In the preceding embodiment, the snubber component 72 was mounted on the substrate 53 and connected to the wiring 534A. Instead, the snubber component 72 may be connected to the wiring 534B.

[0155] <Power Conversion Circuit> FIG. 17 shows a power conversion circuit 4 provided by the power conversion module 20 according to this embodiment. In the power conversion circuit 4, the changeover switch 10 is arranged only on the power supply line 5, similar to the configuration shown in the third embodiment, and is not arranged on the power supply line 6. The snubber circuit 11 is not provided for each phase of the upper and lower arm circuits 9HL, but is provided collectively. A common snubber circuit 11 is connected in parallel to the three-phase upper and lower arm circuits 9HL. One end of the snubber circuit 11 is connected to the wiring 5A2 among the wirings 5A1 and 5A2. The other end is connected to the power supply line 6. Other configurations are the same as those of the power conversion circuit (see FIG. 15) shown in the preceding embodiment.

[0156] <Power Conversion Module> FIG. 18 is a diagram in which the cooler 30, the housing 40, and the sealing body 43 are omitted in the power conversion module 20 according to the present embodiment. FIG. 18 corresponds to FIG. 8. Although illustration is omitted, the power conversion module 20 includes the cooler 30, the housing 40, and the sealing body 43 as in the previous embodiment.

[0157] The power conversion module 20 provides the power conversion circuit 4 shown in FIG. 17. The power conversion module 20 has substantially the same configuration as that shown in the third embodiment. The snubber component 72 is mounted on the substrate 53. The snubber component 72 is connected to a position between the joint portion of the clip 931 and the joint portion of the P bus bar 106 in the wiring 534B. The snubber component 72 is connected to the wiring 534B and the N wiring 535. The snubber component 72 is aligned with the switching switch 80 in the Y direction. Other configurations are the same as those of the power conversion module 20 (see FIG. 16) shown in the previous embodiment.

[0158] <Summary of the Fourth Embodiment> According to the power conversion module 20 of the present embodiment, the same effects as those of the configuration shown in the previous embodiment can be achieved. For example, the semiconductor elements 61H and 62H electrically connected to the switching switch 80 are arranged at positions farther from the power supply terminal than the switching switch 80. Therefore, it is possible to suppress the semiconductor elements 61H and 62H from being erroneously turned on by electromagnetic noise. Further, the semiconductor elements 61L and 62L are arranged at positions farther from the power supply terminal than the semiconductor elements 61H and 62H in the Y direction. It is possible to suppress the semiconductor elements 61L and 62L from being erroneously turned on by electromagnetic noise. Since the snubber component 72 is mounted on the same substrate 53 as the switching switch 80, the connection position of the snubber component 72 can be changed only by changing the pattern of the conductor 532.

[0159] In the example shown in FIG. 18, the switching switch 80 is arranged on the P wiring 534, and the snubber component 72 is connected to the wiring 534B. By providing the N terminal 114, the inverter 9 is connected to the capacitor device 22 without passing through the N wirings 515 and 535. Therefore, the wiring inductance can be reduced. Since the switching switch 10 is not provided on the power supply line 6 and the snubber circuit 11 is connected to the wiring 5A2, only open-wire drive may be executed.

[0160] (Fifth Embodiment) This embodiment is a modified example based on the preceding embodiment, and the description of the preceding embodiment can be incorporated. In the preceding embodiment, the snubber component 72 was mounted on the substrate 53 and connected to the wiring 534A. Instead, the snubber component 72 may be connected to the wiring 534B.

[0161] <Power Conversion Circuit> FIG. 19 shows the power conversion circuit 4 provided by the power conversion module 20 according to this embodiment. In the power conversion circuit 4, the switching switch 10 is arranged only on the power supply line 5 and not on the power supply line 6, in the same configuration as shown in the third embodiment. Different from the third embodiment, the switching switch 10 is provided for each phase with respect to the upper and lower arm circuits 9HL. The power conversion circuit 4 includes three switching switches 10. The drain terminal of each switching switch 10 is connected to the wiring 5A1, and the source terminal is connected to the wiring 5A2. One of the switching switches 10 is connected in series to the upper and lower arm circuits 9HL of the U phase. Another one of the switching switches 10 is connected in series to the upper and lower arm circuits 9HL of the V phase. Another one of the switching switches 10 is connected in series to the upper and lower arm circuits 9HL of the W phase. The source terminals of the three switching switches 10 are electrically connected to each other by the wiring 5A2. The source terminals of the three switching switches 10 are commonly connected.

[0162] The snubber circuit 11 is provided for each phase with respect to the upper and lower arm circuits 9HL. The power conversion circuit 4 includes three snubber circuits 11. In each snubber circuit 11, one of the ends is connected to the wiring 5A1, and the other end is connected to the power supply line 6. One of the snubber circuits 11 is connected in parallel to the upper and lower arm circuits 9HL of the U phase. Another one of the snubber circuits 11 is connected in parallel to the upper and lower arm circuits 9HL of the V phase. Another one of the snubber circuits 11 is connected in parallel to the upper and lower arm circuits 9HL of the W phase. Other configurations are the same as those of the power conversion circuit (see FIG. 15) shown in the previous embodiment.

[0163] <Power conversion module> FIG. 20 is a view in which the cooler 30, the housing 40, and the sealing body 43 are omitted in the power conversion module 20 according to the present embodiment. FIG. 20 corresponds to FIG. 8. Although illustration is omitted, the power conversion module 20 includes a cooler 30, a housing 40, and a sealing body 43 in the same manner as the previous embodiment.

[0164] The power conversion module 20 provides the power conversion circuit 4 shown in FIG. 19. The power conversion module 20 includes substrates 51, 52, and 53 in the same configuration as that shown in the previous embodiment. The substrate 51 and the components mounted on the substrate 51 are the same as those shown in the previous embodiment. The power conversion module 20 does not include the N busbars 107 and 108. Different from the previous embodiment, the upper and lower arm circuits 9HL for two phases of the inverter 9 are configured by the substrate 52 and the components mounted on the substrate 52. The upper and lower arm circuits 9HL for the remaining one phase are configured by the substrate 53 and the components mounted on the substrate 53. The snubber components 72 and the switching switches 80 are provided for each phase of the upper and lower arm circuits 9HL. The snubber components 72 and the switching switches 80 are mounted on the respective substrates 53 and 53.

[0165] The substrate 52 includes a P wiring 524, an N wiring 525, an O wiring 526, and a signal wiring 527. The P wiring 524 has wirings 524D, 524E, 524F, and 524G. The wiring 524D connects the inverter 8 and the drain terminal of the switching switch 80. The substrate 52 has two-phase wirings 524D. The wiring 524D extends generally in the Y direction. One of the ends of the wiring 524D has the switching switch 80 disposed thereon. The drain terminal of the switching switch 80 is connected to the wiring 524D. The two-phase switching switches 80 are arranged side by side in the X direction. A snubber component 72 is connected in the middle of the wiring 524D. The snubber component 72 is connected to the wiring 524D at a position between the connection portion with the wiring 524F and the connection portion with the switching switch 80. The two-phase snubber components 72 are arranged side by side in the X direction.

[0166] The wiring 524E is arranged side by side with the wiring 524D in the Y direction. The wiring 524E has a predetermined gap between it and the wiring 524D. A semiconductor element 62H is disposed on the wiring 524E. The drain terminal of the semiconductor element 62H is connected to the wiring 524E. The two-phase semiconductor elements 62H are arranged side by side in the X direction. The source terminal of the switching switch 80 is electrically connected to the wiring 524E via a clip 923. The two wirings 524E are electrically connected by a clip 924 extending in the Y direction. The clip 924 electrically connects the two wirings 524E across the N wiring 525 located between the wirings 524E. One of the ends of the P bus bar 109 is connected to the wiring 524E disposed on the substrate 53 side.

[0167] The wiring 524F electrically connects the two wirings 524D. The wiring 524F extends generally in the X direction. The wiring 524F is continuous with the end of the wiring 524D opposite to the end where the switching switch 80 is disposed. One of the ends of the P bus bar 106 is connected to the wiring 524F.

[0168] The wiring 524G is electrically connected to the wiring 524E. The wiring 524G electrically connects the drain terminal of the semiconductor element 62H and the charging terminal 113A. The wiring 524G extends generally in the Y direction. One end of the wiring 524G is continuous with the wiring 524E on the side farther from the substrate 53. The charging terminal 113A is joined to the other end of the wiring 524G. The charging terminal 113A extends generally in the Y direction, similar to the charging terminal 113 shown in the previous embodiment. The charging terminal 113A of this embodiment is electrically connected to the wirings 524E and 524G corresponding to the wiring 5A2.

[0169] The N wiring 525 is common to the two-phase upper and lower arm circuits 9HL. The N wiring 525 extends generally in the Y direction. The N wiring 525 is disposed between the P wirings 524 in the X direction. The N wiring 525 runs parallel to the P wirings 524 disposed on both sides. The source terminal of the semiconductor element 62L is electrically connected to one end of the N wiring 525 via the clip 922. Two-phase semiconductor elements 62L are electrically connected to the N wiring 525. The N terminal 114A is joined to the other end of the N wiring 525. The N terminal 114A extends generally in the Y direction, similar to the N terminal 114 shown in the previous embodiment. In the N wiring 525, the snubber component 72 is connected at a position between the connection portion of the semiconductor element 62L and the connection portion of the N terminal 114A. The snubber component 72 is commonly connected to a single N wiring 525.

[0170] The wiring 526 is arranged side by side with the wiring 524E and the N wiring 525 in the Y direction. A semiconductor element 62L is arranged on the wiring 526. The drain terminal of the semiconductor element 62L is connected to the wiring 526. The semiconductor elements 62L of two phases are arranged side by side in the X direction. The source terminal of the semiconductor element 62H is electrically connected to the wiring 526 via a clip 921. In the wiring 526, the connection position of the clip 921 and the connection position of the semiconductor element 62L are arranged side by side in the X direction. An O terminal 116 is connected to the wiring 526. The O terminal 116 extends generally in the Y direction, in the opposite direction to the charging terminal 113A and the N terminal 114A, similar to the O terminal 116 shown in the previous embodiment.

[0171] The signal wiring 527 is provided for the semiconductor elements 62H, 62L and the switching switch 80. The signal wiring 527 of the switching switch 80 and the semiconductor element 62H is arranged on the opposite side of the N wiring 525 in the X direction with respect to the corresponding switching switch 80 and the semiconductor element 62H. The signal wiring 527 of the semiconductor element 62L is arranged on the opposite side of the N wiring 525 in the Y direction with respect to the corresponding semiconductor element 62L.

[0172] The substrate 53 includes a P wiring 534, an N wiring 535, an O wiring 536, and a signal wiring 537. The P wiring 524 has wirings 534C, 534D, 534E, 534F. The wiring 534C connects the inverter 8 and the drain terminal of the switching switch 80, similar to the wiring 524D. The substrate 53 has one-phase wiring 534C. The wiring 534C extends generally in the Y direction. A switching switch 80 is arranged at one end of the wiring 534C. The drain terminal of the switching switch 80 is connected to the wiring 534C. A snubber component 72 is connected in the middle of the wiring 534C. The snubber component 72 is connected to the wiring 534C at a position between the connection portion with the wiring 534E and the connection portion with the switching switch 80.

[0173] Wiring 534D is aligned with wiring 534C in the Y direction. Wiring 534D has a predetermined gap from wiring 534C. A semiconductor element 62H is arranged on wiring 534D. The drain terminal of semiconductor element 62H is connected to wiring 534D. The source terminal of switching switch 80 is electrically connected to wiring 534D via clip 923.

[0174] Wiring 534E electrically connects P wiring 524 formed on substrate 52 and P wiring 534 formed on substrate 53. Wiring 534E is continuous with wiring 534C. Wiring 534E extends generally in the X direction. One end of P bus bar 106 is connected near the end of wiring 534E on the substrate 52 side. P bus bar 106 extends generally in the X direction. P bus bar 106 electrically connects wirings 524F and 534E. One end of P bus bar 105 is connected near the end of wiring 534E on the substrate 51 side. P bus bar 105 extends generally in the X direction. P bus bar 105 electrically connects wirings 514A and 534E.

[0175] Wiring 534F is aligned with wiring 534D in the X direction. Wiring 534F is electrically connected to wiring 534D via clip 933. Clip 933 straddles N wiring 535. One end of P bus bar 109 is connected to wiring 534F. P bus bar 109 extends generally in the X direction. P bus bar 109 electrically connects wirings 524E and 534F.

[0176] The N wiring 535 extends generally in the Y direction. The N wiring 535 is arranged side by side with the P wiring 534 in the X direction. The N wiring 535 runs parallel to the P wiring 534. The source terminal of the semiconductor element 62L is electrically connected to one of the ends of the N wiring 535 via the clip 922. The N terminal 114B is joined to the other end of the N wiring 535. The N terminal 114B extends generally in the Y direction. The N terminals 114A and 114B are power terminals and are connected to the capacitor device 22 together with the P terminal 111 and the N terminal 112. In the N wiring 535, the snubber component 72 is connected at a position between the connection portion of the semiconductor element 62L and the connection portion of the N terminal 114B.

[0177] The wiring 536 is arranged side by side with the wiring 534D and the N wiring 535 in the Y direction. The semiconductor element 62L is arranged on the wiring 536. The drain terminal of the semiconductor element 62L is connected to the wiring 536. The source terminal of the semiconductor element 62H is electrically connected to the wiring 536 via the clip 921. In the wiring 536, the connection position of the clip 921 and the connection position of the semiconductor element 62L are arranged side by side in the X direction. The O terminal 116 for one phase is connected to the wiring 536.

[0178] The signal wiring 537 is provided for the semiconductor elements 62H and 62L and the switching switch 80. The signal wiring 537 of the switching switch 80 and the semiconductor element 62H is arranged on the opposite side of the N wiring 535 in the X direction with respect to the corresponding switching switch 80 and the semiconductor element 62H. The signal wiring 537 of the semiconductor element 62L is arranged on the opposite side of the N wiring 535 in the Y direction with respect to the corresponding semiconductor element 62L. Other configurations are the same as those of the power conversion module 20 (see FIG. 16) shown in the previous embodiment.

[0179] <Summary of the Fifth Embodiment> According to the power conversion module 20 of the present embodiment, the same effects as the configuration shown in the previous embodiment can be achieved. For example, the semiconductor elements 61H and 62H are arranged at positions farther from the power supply terminal than the switching switch 80. Therefore, it is possible to suppress the semiconductor elements 61H and 62H from being erroneously turned on by the electromagnetic noise of the capacitor device 22. Further, the semiconductor elements 61L and 62L are arranged at positions farther from the power supply terminal than the semiconductor elements 61H and 62H in the Y direction. It is possible to suppress the semiconductor elements 61L and 62L from being erroneously turned on by electromagnetic noise.

[0180] As illustrated, the snubber component 72 may be connected to the wiring connecting the inverter 8 and the switching switch 80. In the example shown in FIG. 20, the snubber component 72 mounted on the substrate 52 is connected to the wiring 524D. The snubber component 72 mounted on the substrate 53 is connected to the wiring 534C. Thereby, the power conversion circuit 4 in which the snubber circuit 11 is connected to the wiring 5A1 can be provided. During star connection drive, since the voltage across the capacitor 11C is clamped to the power supply voltage of the DC power supply 2 (the voltage across the smoothing capacitor 7), the charging and discharging operation of the capacitor 11C can be suppressed. Even if the switching switch 80 is not provided on the N wiring 535, the charging and discharging operation of the capacitor 11C can be suppressed during star connection drive.

[0181] As illustrated, while providing the snubber component 72 for each phase, the charging terminal 113A may be connected to the wiring 524G that provides the wiring 5A2. According to this, the charging operation can be performed with the external device 23 without passing through the switching switch 10.

[0182] In the circuit configuration shown in FIG. 19, only open connection drive may be executed by the series circuit of the switching switch 80 and the lower arm 9L provided for each phase with all the upper arms 9H of each phase of the inverter 9 being turned on.

[0183] (Other embodiments) The disclosure in this specification, drawings, etc. is not limited to the illustrated embodiments. The disclosure includes the illustrated embodiments and modifications by those skilled in the art based thereon. For example, the disclosure is not limited to the combination of components and / or elements shown in the embodiments. The disclosure can be implemented by various combinations. The disclosure can have additional parts that can be added to the embodiments. The disclosure includes those in which components and / or elements of the embodiments are omitted. The disclosure includes the replacement or combination of components and / or elements between one embodiment and another. The technical scope disclosed is not limited to the description of the embodiments. Some of the technical scopes disclosed are indicated by the description of the claims and should be construed to include all changes within the meaning and scope equivalent to the description of the claims.

[0184] The disclosure in the specification, drawings, etc. is not limited by the description of the claims. The disclosure in the specification, drawings, etc. includes the technical idea described in the claims and extends to more diverse and extensive technical ideas than the technical idea described in the claims. Therefore, various technical ideas can be extracted from the disclosure in the specification, drawings, etc. without being restricted by the description of the claims.

[0185] When an element or layer is referred to as "above," "connected to," "attached to," or "coupled to," it can be directly above, connected to, attached to, or coupled to another element or layer, and there may be intervening elements or intervening layers. In contrast, when an element is referred to as "directly above," "directly connected to," "directly attached to," or "directly coupled to" another element or layer, there are no intervening elements or intervening layers. Other words used to describe the relationship between elements should be interpreted in a similar manner (e.g., "between" versus "directly between," "adjacent" versus "directly adjacent," etc.). As used in this specification, the term "and / or" includes any combination and all combinations of one or more of the associated listed items. That is, the description of A and / or B means at least one of A and B, and may include only A, only B, or both A and B.

[0186] Spatially relative terms such as "inside," "outside," "beneath," "below," "lower," "above," "upper," etc. are used herein to facilitate descriptions of the relationship of one element or feature to another as illustrated. Spatially relative terms can be intended to encompass different orientations of the device during use or operation in addition to the orientation depicted in the drawings. For example, if the device in the figures is turned over, an element described as "below" or "beneath" another element or feature will be oriented "above" the other element or feature. Thus, the term "below" can encompass both the orientation of above and below. The device may be oriented in other directions (rotated 90 degrees or other orientations), and the spatially relative descriptors used in this specification are to be interpreted accordingly.

[0187] (Disclosure of Technical Idea) This specification discloses a plurality of technical ideas described in a plurality of clauses listed below. Some clauses may be described in a multiple dependent form that alternatively quotes preceding clauses in subsequent clauses. Further, some clauses may be described in a multiple dependent form that quotes clauses in other multiple dependent forms. The clauses described in these multiple dependent forms define a plurality of technical ideas.

[0188] <Technical Idea 1> A first semiconductor element (61H, 61L) constituting a first inverter (8) connected to one end of a winding of a rotating electrical machine (3); A second semiconductor element (62H, 62L) constituting a second inverter (9) connected to the other end of the winding; A plurality of power supply terminals (111, 112, 114, 114A, 114B) connected to a smoothing capacitor (22, 7); Power supply wirings (514, 515, 524, 525, 534, 535) connecting at least one of the first inverter and the second inverter to the power supply terminals; A switching switch (80) disposed at a portion of the power supply wiring that connects the first inverter and the second inverter, connecting the smoothing capacitor and the second inverter in a closed state, and disconnecting the connection between the smoothing capacitor and the second inverter in an open state; Comprising: The first semiconductor element and the second semiconductor element are arranged side by side in a predetermined direction; A semiconductor element (60) including the first semiconductor element and the second semiconductor element and the power supply terminals are arranged side by side in a direction orthogonal to the predetermined direction; The semiconductor element electrically connected to the switching switch via the power supply wiring is disposed at a position farther from the power supply terminals in the orthogonal direction than the corresponding switching switch. A power conversion module.

[0189] <Technical Idea 2> It includes charging terminals (113, 113A) that are electrically connected to an external device (23) for charging. The second semiconductor element includes a second upper arm element (62H) that constitutes the upper arm of the second inverter, and a second lower arm element (62L) that constitutes the lower arm of the second inverter. The power conversion module according to Technical Idea 1, wherein the second lower arm element is arranged at a position farther from the power supply terminal in the orthogonal direction than the second upper arm element.

[0190] <Technical Idea 3> The first semiconductor element includes a first upper arm element (61H) that constitutes the upper arm of the first inverter, and a first lower arm element (61L) that constitutes the lower arm of the first inverter. The power conversion module according to Technical Idea 1 or Technical Idea 2, wherein the first lower arm element is arranged at a position farther from the power supply terminal in the orthogonal direction than the first upper arm element.

[0191] <Technical Idea 4> The power conversion module according to any one of Technical Ideas 1 to 3, wherein the switching switch is located between the first semiconductor element and the second semiconductor element in the predetermined direction.

Explanation of Reference Signs

[0192] 1... drive system, 2... DC power supply, 3... rotating electrical machine, 3U, 3V, 3W... windings, 4... power conversion circuit, 5, 6... power lines, 5A, 5A1, 5A2, 6A... wirings, 7... smoothing capacitor, 8, 9... inverters, 8HL, 9HL... upper and lower arm circuits, 8D, 9D... diodes, 8H, 9H... upper arms, 8L, 9L... lower arms, 8S, 9S... MOSFETs, 10, 10A, 10B... switching switches, 11, 12... snubber circuits, 11C, 12C... capacitors, 11R, 12R... resistors, 13, 14... output lines, 15... control unit, 16... external device, 20... power conversion module, 201, 202... circuit units, 21... power supply device, 22... capacitor device, 23... external device, 24N, 25N, 26N... N busbars, 24P, 25P, 26P... P busbars, 30... cooler, 301... one side, 302... back side, 31... case, 32... lid, 33... flow path, 34... fins, 35... inlet pipe, 36... outlet pipe, 37... refrigerant, 40... housing, 41... frame body, 411, 412, 413, 414... wall parts, 42... partition wall, 43... sealing body, 50, 51, 52, 53... substrates, 511, 521, 531... insulating base materials, 512, 513, 522, 523, 532, 533... conductors, 514, 524, 534... P wirings, 514A, 514B, 514C, 524A, 524B, 524C, 524D, 524E, 524F, 524G, 534A, 534B, 534C, 534D, 534E, 534F... wirings, 515, 525, 535... N wirings, 515A, 515B, 525A, 525B... wirings, 516, 526... O wirings, 517, 527, 537... signal wirings, 60, 61H, 61L, 62H, 62L... semiconductor elements, 70, 71, 72... snubber components, 80, 81, 82... switching switches, 90, 911, 912, 921, 922, 923, 924, 931, 932, 933... clips, 100... busbar, 101, 103, 105, 106, 109... P busbars, 102, 104, 107, 108... N busbars, 110... main terminal, 111... P terminal, 112, 114, 114A, 114B... N terminals, 113, 113A... charging terminals, 115, 116... O terminals

Claims

1. A first semiconductor element (61H, 61L) constituting a first inverter (8) connected to one end of a winding of a rotating electrical machine (3); A second semiconductor element (62H, 62L) constituting a second inverter (9) connected to the other end of the winding; A plurality of power supply terminals (111, 112, 114, 114A, 114B) connected to smoothing capacitors (22, 7); Power supply wirings (514, 515, 524, 525, 534, 535) connecting at least one of the first inverter and the second inverter to the power supply terminals; A changeover switch (80) disposed at a portion of the power supply wiring connecting the first inverter and the second inverter, connecting the smoothing capacitor and the second inverter in a closed state, and disconnecting the connection between the smoothing capacitor and the second inverter in an open state; Comprising: The first semiconductor element and the second semiconductor element are arranged side by side in a predetermined direction; A semiconductor element (60) including the first semiconductor element and the second semiconductor element and the power supply terminals are arranged side by side in a direction orthogonal to the predetermined direction; The semiconductor element electrically connected to the changeover switch via the power supply wiring is disposed at a position farther from the power supply terminals in the orthogonal direction than the corresponding changeover switch, a power conversion module.

2. Comprising charging terminals (113, 113A) electrically connected to an external device (23) for charging; The second semiconductor element includes a second upper arm element (62H) constituting the upper arm of the second inverter and a second lower arm element (62L) constituting the lower arm of the second inverter; The power conversion module according to claim 1, wherein the second lower arm element is disposed at a position farther from the power supply terminals in the orthogonal direction than the second upper arm element.

3. The first semiconductor element includes a first upper arm element (61H) constituting the upper arm of the first inverter and a first lower arm element (61L) constituting the lower arm of the first inverter; The power conversion module according to claim 2, wherein the first lower arm element is disposed at a position farther from the power supply terminals in the orthogonal direction than the first upper arm element.

4. The power conversion module according to any one of claims 1 to 3, wherein the changeover switch is located between the first semiconductor element and the second semiconductor element in the predetermined direction.

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