Method of manufacturing light emitting device

Abstract

To provide a method of manufacturing a light emitting device capable of reducing unintended cracking of light emitting elements.SOLUTION: A method of manufacturing a light emitting device comprises the steps of: preparing a first structure including an element substrate, a plurality of light emitting elements arranged on a first surface of the element substrate at a first distance apart from each other, and a covering member that covers the plurality of light emitting elements and is disposed between the plurality of light emitting elements; removing the element substrate from the first structure; separating the covering member of a second structure obtained by removing the element substrate from the first structure into a plurality of covering parts; expanding a sheet supporting the second structure so as to increase the distance between the plurality of light emitting elements to a second distance greater than the first distance; and disposing a wavelength conversion member on a light emitting surface of each of the plurality of light emitting elements arranged at the second distance apart from each other.SELECTED DRAWING: Figure 1E

Description

[Technical Field]

[0001] The present invention relates to a method for manufacturing a light-emitting device. [Background technology]

[0002] For example, Patent Document 1 discloses that a plurality of light-emitting diodes arranged in an array with spaces between them on a growth substrate are bonded to a bonding base frame with a resin layer, and then the growth substrate is peeled off using a laser. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Special Publication No. 2021-531647 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present invention is to provide a method for manufacturing a light emitting device that can reduce unintended cracking of light emitting elements. [Means for solving the problem]

[0005] According to one aspect of the present invention, a method for manufacturing a light emitting device includes the steps of: preparing a first structure including an element substrate having a first surface and a second surface opposite the first surface; a plurality of light emitting elements arranged on the first surface of the element substrate at a first distance from each other, each having a light emitting surface facing the first surface; and a covering member that covers the plurality of light emitting elements on the first surface side and is arranged between the plurality of light emitting elements; removing the element substrate from the first structure; cutting portions of the covering member that are located between the plurality of light emitting elements and separating the covering member into a plurality of covering portions of a second structure from which the element substrate has been removed from the first structure; expanding a sheet supporting the second structure so as to increase the distance between the plurality of light emitting elements to a second distance that is greater than the first distance, while each of the plurality of light emitting elements is covered by the covering portion; and arranging a wavelength conversion member on the light emitting surface of each of the plurality of light emitting elements arranged at the second distance from each other. [Effects of the Invention]

[0006] According to the present invention, it is possible to provide a method for manufacturing a light emitting device that can reduce unintended cracking of light emitting elements. [Brief explanation of the drawings]

[0007] [Figure 1A] FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 1B] FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 1C] FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 1D] FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 1E] FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 1F]FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 1G] FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 1H] FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 1I] FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 1J] FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 1K] FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 1L] FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 1M] FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 1N] FIG. 1 is a schematic plan view of a light emitting device according to a first embodiment. [Figure 2A] FIG. 10 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the second embodiment. [Figure 2B] FIG. 10 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the second embodiment. [Figure 3A] FIG. 10 is a schematic cross-sectional view illustrating one step of a method for manufacturing a light emitting device according to a third embodiment. [Figure 3B] FIG. 10 is a schematic cross-sectional view illustrating one step of a method for manufacturing a light emitting device according to a third embodiment. [Figure 3C] FIG. 10 is a schematic cross-sectional view illustrating one step of a method for manufacturing a light emitting device according to a third embodiment. [Figure 3D] FIG. 10 is a schematic cross-sectional view illustrating one step of a method for manufacturing a light emitting device according to a third embodiment. [Figure 3E] FIG. 10 is a schematic cross-sectional view illustrating one step of a method for manufacturing a light emitting device according to a third embodiment. [Figure 3F] FIG. 10 is a schematic cross-sectional view illustrating one step of a method for manufacturing a light emitting device according to a third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments will be described with reference to the drawings. In each drawing, the same components are denoted by the same reference numerals. Note that, since each drawing is a schematic illustration of an embodiment, the scale, spacing, or positional relationship of each component may be exaggerated, or some components may be omitted. In addition, cross-sectional views may be end views showing only the cut surface.

[0009] In the following description, components having substantially the same functions are denoted by common reference symbols and may not be described again. Terms indicating specific directions or positions (e.g., "upper," "lower," and other terms including these terms) may be used. However, these terms are used merely to facilitate understanding of relative directions or positions in the referenced drawings. As long as the relative direction or positional relationship indicated by terms such as "upper," "lower," etc. in the referenced drawings is the same, the arrangement in drawings other than those disclosed herein, actual products, etc., may not be the same as in the referenced drawings. In this specification, the positional relationship expressed as "upper" includes both cases where the components are in contact with the object to be covered and cases where the components are not in contact but are positioned above the object to be covered. Furthermore, in this specification, unless otherwise specified, a member covering an object to be covered includes cases where the member is in contact with the object to be covered and directly covers the object to be covered, and cases where the member is not in contact with the object to be covered and indirectly covers the object to be covered.

[0010] [First embodiment] A method for manufacturing the light emitting device according to the first embodiment will be described with reference to FIGS. 1A to 1N.

[0011] The manufacturing method of the light emitting device according to the first embodiment includes the steps of preparing a first structure 101, removing the element substrate 10 from the first structure 101, separating the first covering member 30 into a plurality of covering portions 31, expanding the first sheet 201, and arranging the wavelength conversion member 40.

[0012] <Step of preparing the first structure> As shown in FIG. 1A, in the step of preparing a first structure 101, the first structure 101 has an element substrate 10, a plurality of light-emitting elements 20, and a first covering member 30.

[0013] The element substrate 10 has a first surface 11 and a second surface 12 located on the opposite side of the first surface 11. The element substrate 10 is, for example, a sapphire substrate.

[0014] The plurality of light-emitting elements 20 are arranged on the first surface 11 of the element substrate 10 at a first distance d1. The first distance d1 is, for example, the maximum distance between the side surfaces of adjacent light-emitting elements 20 in directions perpendicular to each other. The plurality of light-emitting elements 20 are, for example, parallel to the first surface 11 and arranged at the first distance d1 in two directions perpendicular to each other. In a plan view of the first surface 11, the shape of the light-emitting elements 20 is, for example, rectangular.

[0015] The light emitting element 20 has a semiconductor layer 21. The semiconductor layer 21 is made of a nitride semiconductor. In this specification, the term "nitride semiconductor" refers to, for example, In x Al y Ga 1-x-y The term "nitride semiconductor" includes all semiconductors with compositions in which the composition ratios x and y in the chemical formula N (0≦x≦1, 0≦y≦1, x+y≦1) are varied within their respective ranges. In addition, the term "nitride semiconductor" also includes semiconductors with the above chemical formula that further contain Group V elements other than N (nitrogen), and semiconductors that further contain various elements added to control various physical properties such as conductivity type.

[0016] The semiconductor layer 21 includes an n-side semiconductor layer, a p-side semiconductor layer, and an active layer located between the n-side semiconductor layer and the p-side semiconductor layer. The active layer emits light having an emission peak wavelength of, for example, 100 nm or more and 700 nm or less. The active layer may have, for example, an MQW (Multiple Quantum Well) structure including multiple barrier layers and multiple well layers. The n-side semiconductor layer includes a semiconductor layer containing n-type impurities. The p-side semiconductor layer includes a semiconductor layer containing p-type impurities. The light-emitting element 20 has a light-emitting surface 20A facing the first surface 11 of the element substrate 10. The light-emitting surface 20A is, for example, a surface of the n-side semiconductor layer facing the first surface 11. Light emitted by the active layer is extracted to the outside of the light-emitting element 20 mainly from the light-emitting surface 20A.

[0017] The semiconductor layer 21 has an electrode placement surface 20B located on the opposite side to the light emitting surface 20A. The light emitting element 20 has a first electrode 22A and a second electrode 22B arranged on the electrode placement surface 20B. For example, the first electrode 22A is electrically connected to the n-side semiconductor layer, and the second electrode 22B is electrically connected to the p-side semiconductor layer.

[0018] The first covering member 30 covers the plurality of light-emitting elements 20 on the first surface 11 side of the element substrate 10, and is disposed between the plurality of light-emitting elements 20. The first covering member 30 covers the electrode placement surface 20B, the first electrode 22A, the second electrode 22B, and the side surfaces of the light-emitting elements 20. The light-emitting surface 20A is not covered by the first covering member 30.

[0019] The first coating member 30 is made of, for example, polyimide resin. Alternatively, the first coating member 30 includes, for example, silicone resin and light-scattering particles contained in the silicone resin. The light-scattering particles may be, for example, titanium oxide or aluminum oxide particles.

[0020] The process of preparing the first structure 101 can include, for example, the steps of forming a nitride semiconductor layer on a first surface 11 of an element substrate 10, which is a sapphire substrate; removing a portion of the nitride semiconductor layer to separate the nitride semiconductor layer into a plurality of semiconductor layers 21 on the first surface 11; forming a first electrode 22A and a second electrode 22B on the electrode placement surface 20B of the semiconductor layer 21; and forming a first covering member 30 on the first surface 11 so as to cover the plurality of light-emitting elements 20.

[0021] For example, a nitride semiconductor layer can be formed on the first surface 11 by MOCVD (metal organic chemical vapor deposition). For example, a portion of the nitride semiconductor layer can be removed by RIE (reactive ion etching). For example, the first covering member 30 can be formed by applying a liquid resin material onto the first surface 11 so as to cover the plurality of light emitting elements 20, and then curing the material by heating.

[0022] <Step of Removing the Element Substrate from the First Structure> The method for manufacturing the light emitting device according to the first embodiment includes a step of preparing a first structure 101 and then removing the element substrate 10 from the first structure 101. The step of removing the element substrate 10 includes a step of arranging the first structure 101 on a first sheet 201, as shown in FIG. 1B . For example, the first structure 101 is arranged on the first sheet 201 by adhering the surface of the first covering member 30 opposite the first surface 11 to the adhesive surface of the first sheet 201. The first sheet 201 is an expandable resin sheet, as will be described later.

[0023] In this embodiment, after the first structure 101 is placed on the first sheet 201, the element substrate 10 is removed from the first structure 101 on the first sheet 201, as shown in FIG. 1C. The second structure 102, which is the first structure 101 from which the element substrate 10 has been removed, is supported on the first sheet 201.

[0024] In the step of removing the element substrate 10, the element substrate 10 is removed by, for example, a laser lift-off method. In the laser lift-off method, laser light is irradiated from the second surface 12 side of the element substrate 10 toward the interface between the light emitting element 20 and the first surface 11 of the element substrate 10, and the interface between the first covering member 30 and the first surface 11 of the element substrate 10, thereby removing the element substrate 10. The interface between the light emitting element 20 and the first surface 11 is the interface between the semiconductor layer 21 and the first surface 11. The interface of the semiconductor layer 21 with the first surface 11 contains, for example, gallium nitride.

[0025] The laser light has a wavelength that is transmitted through the element substrate 10 but is in an absorption region for the semiconductor layer 21 and the first covering member 30. The laser light is, for example, light with an emission peak wavelength of 190 nm or more and 380 nm or less. The gallium nitride at the interface between the semiconductor layer 21 and the first surface 11 absorbs the energy of the laser light and is thermally decomposed into nitrogen gas and gallium, and the element substrate 10 is separated from the semiconductor layer 21.

[0026] When the first covering member 30 is made of polyimide resin, the polyimide resin absorbs the energy of the laser light and sublimes. For example, a portion of the first covering member 30 having a thickness of about 1 μm is sublimated from the interface with the first surface 11. As a result, the element substrate 10 is separated from the first covering member 30.

[0027] When the first covering member 30 contains a silicone resin and light scattering particles contained in the silicone resin, the light scattering particles absorb the energy of the laser light and generate heat. The heat causes the silicone resin to sublimate, and the element substrate 10 is separated from the first covering member 30.

[0028] In the step of removing the element substrate 10, the light emitting element 20 is supported on the first sheet 201 via the first covering member 30, which covers the light emitting element 20 except for the interface with the first surface 11. The first covering member 30 can absorb the impact of nitrogen gas generated during the thermal decomposition of gallium nitride. This reduces the stress applied to the light emitting element 20, and can reduce unintended cracking of the light emitting element 20.

[0029] In the second structure 102 obtained by removing the element substrate 10 from the first structure 101, the light emitting surfaces 20A of the plurality of light emitting elements 20 and the upper surface of the first covering member 30 arranged between the plurality of light emitting elements 20 are exposed.

[0030] The method for manufacturing the light emitting device according to the first embodiment may include a step of roughening the light emitting surface 20A of the light emitting element 20 after removing the element substrate 10. The method for manufacturing the light emitting device according to the first embodiment may include a step of covering the light emitting surface 20A of the light emitting element 20 with a protective film after removing the element substrate 10.

[0031] <Step of separating the coated member into multiple coated portions> After removing the element substrate 10, the portions of the first covering member 30 of the second structure 102, from which the element substrate 10 has been removed from the first structure 101, located between the plurality of light-emitting elements 20 are cut, and the first covering member 30 is separated into a plurality of covering portions 31, as shown in FIG. 1D . Grooves 32 are formed between adjacent covering portions 31 on the first sheet 201. The width of the grooves 32 is smaller than the first distance d1. Each of the plurality of light-emitting elements 20 is covered by a covering portion 31. The covering portion 31 covers the side surface of the light-emitting element 20, the electrode placement surface 20B, the first electrode 22A, and the second electrode 22B.

[0032] In the step of separating the first covering member 30 into the plurality of covering portions 31, the first covering member 30 can be cut using, for example, a dicing blade. Alternatively, the first covering member 30 may be cut by laser processing. Since laser processing may cause thermal damage to the light emitting elements 20, it is preferable to cut the first covering member 30 using a dicing blade.

[0033] <Expanding the sheet process> After the step of separating the first covering member 30 into the plurality of covering portions 31, with each of the plurality of light-emitting elements 20 covered by the covering portion 31, the first sheet 201 is expanded so as to increase the distance between the plurality of light-emitting elements 20 to a second distance d2 that is greater than the first distance d1, as shown in Fig. 1E. The second distance d2 is, for example, the maximum distance between the side surfaces of adjacent light-emitting elements 20 in a direction perpendicular to each other after the expansion of the first sheet 201.

[0034] When the first sheet 201 is expanded while the light-emitting element 20 is adhered to the first sheet 201 without being covered by the covering portion 31, a part of the light-emitting element 20 (especially the corners when viewed in a plane) tends to lift up from the first sheet 201, which puts stress on the light-emitting element 20 and makes the light-emitting element 20 prone to cracking.

[0035] According to this embodiment, the stress that may be applied to the light emitting element 20 when the first sheet 201 expands can be absorbed by the covering portion 31. This reduces the stress applied to the light emitting element 20, and reduces unintended cracking of the light emitting element 20.

[0036] According to this embodiment, in the step of expanding the first sheet 201, the covering portion 31 is positioned between the first sheet 201 and the electrode placement surface 20B, which is located on the opposite side of the light-emitting surface 20A of the light-emitting element 20. The entire surface of the light-emitting element 20 on the opposite side of the light-emitting surface 20A is adhered to the first sheet 201 by the covering portion 31, which can increase the fixing force of the light-emitting element 20 to the first sheet 201. This makes it difficult for the light-emitting element 20 to lift up from the first sheet 201 when the first sheet 201 is expanded, and can reduce unintended cracking of the light-emitting element 20.

[0037] <Step of arranging wavelength conversion member> After the first sheet 201 is expanded to separate the plurality of light-emitting elements 20 from one another by a second distance d2, a wavelength conversion member 40 is disposed on the light-emitting surface 20A of each of the plurality of light-emitting elements 20, as shown in FIG. 1H.

[0038] As will be described later, the process of arranging the wavelength conversion member 40 includes a heat treatment at, for example, 100°C or higher. If the first sheet 201 is not heat-resistant to 100°C or higher, the light-emitting elements 20 and the covering portion 31 are rearranged on a third sheet 203 shown in FIG. 1G. First, the light-emitting surface 20A of each of the plurality of light-emitting elements 20 shown in FIG. 1E is adhered to a second sheet (transfer sheet) 202 shown in FIG. 1F, and the first sheet 201 is peeled off. Thereafter, the upper surface of the covering portion 31 shown in FIG. 1F is adhered to a third sheet 203 (heat-resistant sheet) shown in FIG. 1G, and the second sheet 202 is peeled off to expose the light-emitting surface 20A.

[0039] Thereafter, in the step of disposing the wavelength conversion member 40, for example, a liquid adhesive member 50 is supplied onto the light-emitting surface 20A. For example, a nozzle that holds the wavelength conversion member 40 by suction is moved toward the adhesive member 50 on the light-emitting surface 20A, the wavelength conversion member 40 is disposed on the adhesive member 50, and the suction force of the nozzle is released. Thereafter, the adhesive member 50 is cured by, for example, a heat treatment at 100°C or higher. As shown in FIG. 1H, the wavelength conversion member 40 is bonded to the light-emitting surface 20A via the adhesive member 50. The third sheet 203 has resistance to the temperature of the heat treatment.

[0040] By increasing the distance between the plurality of light-emitting elements 20 from the first distance d1, which is restricted by the wafer size of the element substrate 10, to the second distance d2, it becomes easier to arrange the wavelength conversion member 40 on the light-emitting surface 20A of each light-emitting element 20. The first distance d1 is, for example, not less than 25 μm and not more than 100 μm. The second distance d2 is, for example, not less than 27 μm and not more than 110 μm.

[0041] If the first sheet 201 used to increase the distance between the light emitting elements 20 has heat resistance to the temperature of the heat treatment, the step of arranging the wavelength conversion member 40 can be continued with the light emitting elements 20 supported on the first sheet 201 shown in Fig. 1E. In this case, the transfer steps shown in Fig. 1F and Fig. 1G are not necessary.

[0042] Alternatively, the wavelength conversion member 40 can be directly bonded to the light-emitting surface 20A at room temperature in a reduced pressure atmosphere without using the adhesive member 50. In this case, too, the step of arranging the wavelength conversion member 40 can be continued in a state in which the light-emitting element 20 is supported on the first sheet 201, and the transfer step shown in FIGS. 1F and 1G is not necessary.

[0043] The wavelength conversion member 40 converts the wavelength of at least a part of the light emitted by the active layer of the light emitting element 20. The wavelength conversion member 40 can be a sintered body formed by sintering phosphor powder and consisting essentially of phosphor alone. Alternatively, the wavelength conversion member 40 can be a light-transmitting material containing phosphor. Examples of the light-transmitting material that can be used include ceramics, resin, and glass. Examples of the phosphor include a cerium-activated yttrium-aluminum-garnet phosphor (e.g., (Y,Gd)3(Al,Ga)5O 12 :Ce), cerium-activated lutetium aluminum garnet phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce) and the like can be used.

[0044] The adhesive member 50 is transparent to the light emitted by the active layer. The transmittance of the adhesive member 50 to the light emitted by the active layer is, for example, 80% or more. The adhesive member 50 can be made of, for example, a silicone resin or a modified resin thereof.

[0045] The manufacturing method for the light emitting device according to the first embodiment may further include, after the step of arranging the wavelength conversion member 40, the steps of preparing a plurality of intermediate elements 60 and arranging the plurality of intermediate elements 60 on the wiring substrate 70.

[0046] <Step of Preparing Multiple Intermediate Elements> In the process of preparing a plurality of intermediate elements 60, the covering portion 31 is removed, and a plurality of intermediate elements 60 are prepared, each having a light-emitting element 20 and a wavelength conversion member 40 arranged on the light-emitting surface 20A, as shown in FIG. 1J.

[0047] The step of preparing the plurality of intermediate elements 60 includes a step of transferring the covering 31, the light emitting element 20, and the wavelength conversion member 40 supported on the third sheet (heat-resistant sheet) 203 shown in Fig. 1H to the fourth sheet (chemical-resistant sheet) 204 shown in Fig. 1I. The surface of the wavelength conversion member 40 located opposite to the light emitting surface 20A is adhered to the fourth sheet 204. The third sheet 203 adhered to the covering 31 is peeled off.

[0048] The covering portion 31 can be removed from the fourth sheet 204 using a stripping liquid. For example, N-methyl-2-pyrrolidone (NMP) can be used as the stripping liquid. The fourth sheet 204 is resistant to the stripping liquid.

[0049] By removing the covering portion 31, the side surface of the light emitting element 20, the electrode placement surface 20B, the first electrode 22A, and the second electrode 22B are exposed as shown in FIG. 1J.

[0050] <Step of placing multiple intermediate elements on a wiring substrate> After removing the covering portion 31, a plurality of intermediate elements 60 are placed on a wiring substrate 70 as shown in FIG. 1K.

[0051] The wiring board 70 has an insulating base material 71, and a first wiring portion 72A and a second wiring portion 72B disposed on the insulating base material 71.

[0052] The electrode placement surface 20B, first electrode 22A, and second electrode 22B of the light emitting element 20 face the wiring substrate 70. The first electrode 22A is bonded to the first wiring portion 72A via a conductive bonding member 80. The second electrode 22B is bonded to the second wiring portion 72B via the bonding member 80. The n-side semiconductor layer of the light emitting element 20 is electrically connected to the first wiring portion 72A via the first electrode 22A and the bonding member 80. The p-side semiconductor layer of the light emitting element 20 is electrically connected to the second wiring portion 72B via the second electrode 22B and the bonding member 80. The bonding member 80 can be, for example, solder.

[0053] The manufacturing method for the light emitting device according to the first embodiment may further include, after the step of arranging a plurality of intermediate elements 60 on the wiring substrate 70, the steps of covering the side surfaces of the intermediate elements 60 with a light-reflective member 90 and cutting the light-reflective member 90 and the wiring substrate 70 between the plurality of intermediate elements 60.

[0054] <Step of covering the side surfaces of the intermediate element with a light-reflective member> 1L, a light-reflective member 90 is formed on the wiring substrate 70 so as to cover the side surfaces of the intermediate elements 60. The light-reflective member 90 is filled between adjacent intermediate elements 60. The reflective member 90 is filled between the electrode placement surface 20B of the light-emitting element 20 and the wiring substrate 70. The upper surface 40A of the wavelength conversion member 40 (the surface opposite to the light-emitting surface 20A of the light-emitting element 20) is exposed from the light-reflective member 90.

[0055] The light-reflecting member 90 may have a resin member and light-scattering particles contained in the resin member. The resin of the resin member may be, for example, a thermosetting resin such as a silicone resin, an epoxy resin, or a phenolic resin. The light-scattering particles may be, for example, particles of titanium oxide, aluminum oxide, or silicon oxide.

[0056] <Step of Cutting the Light Reflective Member and the Wiring Board> After forming the light reflective member 90, the light reflective member 90 and the wiring substrate 70 are cut between the intermediate elements 60. As a result, the light emitting devices 1 are separated into individual pieces, as shown in FIG. 1M.

[0057] The light emitting device 1 includes a wiring board 70, a light emitting element 20 arranged on the wiring board 70, a wavelength conversion member 40 arranged on a light emitting surface 20A of the light emitting element 20, and a light reflective member 90 that covers the side surfaces of the light emitting element 20, the electrode placement surface 20B, and the side surfaces of the wavelength conversion member 40. An upper surface 40A of the wavelength conversion member 40 that is exposed from the light reflective member 90 serves as a light extraction surface of the light emitting device 1.

[0058] 1N is a schematic plan view of the light emitting device 1 as viewed from the light extraction surface side. The wiring substrate 70 has a first external connection portion 73A and a second external connection portion 73B. The first external connection portion 73A is disposed on an insulating base material 71 and is electrically connected to a first wiring portion 72A. The second external connection portion 73B is disposed on the insulating base material 71 and is electrically connected to a second wiring portion 72B. The first external connection portion 73A and the second external connection portion 73B are exposed from the light emitting element 20, the wavelength conversion member 40, and the light reflective member 90 in plan view. The first external connection portion 73A and the second external connection portion 73B are electrically connected to an external circuit, for example, by wires.

[0059] [Second embodiment] A method for manufacturing a light emitting device according to the second embodiment will be described with reference to FIGS. 2A and 2B.

[0060] In the manufacturing method of the light emitting device according to the second embodiment, the steps up to the step of separating the covering member 30 shown in FIG. 1D into a plurality of covering portions 31 are performed in the same manner as in the first embodiment. After this, the light emitting surfaces 20A of the plurality of light emitting elements 20 are bonded to a fifth sheet 205 shown in FIG. 2A. The first sheet 201 that was bonded to the covering portions 31 is peeled off. The second structure 102, from which the element substrate 10 has been removed from the first structure 101, is transferred to a fifth sheet 205 that is separate from the first sheet 201.

[0061] After the light-emitting elements 20 and the covering portion 31 are transferred to the fifth sheet 205, the fifth sheet 205 is expanded so as to increase the distance between the multiple light-emitting elements 20 to a second distance d2 that is greater than the first distance d1, as shown in FIG. 2B.

[0062] In the step of expanding the fifth sheet 205, the covering portion 31 covers the side surfaces of the light emitting element 20 and is adhered to the fifth sheet 205 outside the adhesive surface between the light emitting surface 20A and the fifth sheet 205. This makes it difficult for the corners of the light emitting surface 20A to lift up from the fifth sheet 205 when the fifth sheet 205 is expanded, thereby reducing unintended cracking of the light emitting element 20.

[0063] After the distance between the plurality of light-emitting elements 20 is increased to the second distance d2 by expanding the fifth sheet 205, the light-emitting elements 20 and the covering portion 31 are transferred to the third sheet 203 as shown in FIG. 1G. The surface of the covering portion 31 opposite the electrode placement surface 20B is adhered to the third sheet 203. The fifth sheet 205 is peeled off from the light-emitting surface 20A. Thereafter, the steps described above with reference to FIGS. 1H to 1M are continued.

[0064] [Third embodiment] A method for manufacturing the light emitting device according to the third embodiment will be described with reference to FIGS. 3A to 3F.

[0065] The method for manufacturing a light emitting device according to the third embodiment includes a step of preparing a first structure 101 similar to those in the first and second embodiments, followed by a step of bonding the first structure 101 to a support substrate 300, as shown in FIG. 3A.

[0066] For example, a sapphire substrate can be used as the support substrate 300. The support substrate 300 has a third surface 303 and a fourth surface 304 located on the opposite side of the third surface 303. The first surface 11 of the element substrate 10 faces the third surface 303 of the support substrate 300.

[0067] The second covering member 130 is placed on the third surface 303 of the support substrate 300. The same material as that of the first covering member 30 can be used as the material for the second covering member 130. After the semi-cured first covering member 30 on the first structure 101 and the semi-cured second covering member 130 on the support substrate 300 are bonded together, the first covering member 30 and the second covering member 130 are completely cured by a heat treatment. This fixes the first structure 101 to the support substrate 300. The first covering member 30 and the second covering member 130 become an integrated covering member 230. The first structure 101 is temporarily supported on the support substrate 300 until it is placed on a sheet.

[0068] The method for manufacturing the light emitting device according to the third embodiment includes a step of bonding the first structure 101 to the support substrate 300, and then a step of removing the element substrate 10 from the first structure 101.

[0069] 3B , in a state in which the first structure 101 is supported on the support substrate 300, the element substrate 10 is removed from the first structure 101. As in the first embodiment, the element substrate 10 is removed by laser lift-off. A second structure 103, from which the element substrate 10 has been removed from the first structure 101, is supported on the support substrate 300.

[0070] By removing the element substrate 10 while the first structure 101 is supported on a support substrate 300 that is harder than the first sheet 201 in the above embodiment, downward displacement (sinking) of the entire first structure 101 can be reduced compared to when the element substrate 10 is removed from the first sheet 201, and unintentional cracking of the light-emitting element 20 can be reduced.

[0071] After removing the element substrate 10 from the first structure 101, the second structure 103, from which the element substrate 10 has been removed, is placed on the sixth sheet 206, as shown in FIG. 3C . The light-emitting surfaces 20A of the plurality of light-emitting elements 20 and the surface of the first covering member 30 exposed between the plurality of light-emitting elements 20 are adhered to the sixth sheet 206. The second structure 103 has the plurality of light-emitting elements 20 and a covering member 230. The second structure 103 is located between the sixth sheet 206 and the support substrate 300.

[0072] The method for manufacturing the light emitting device according to the third embodiment includes a step of removing the support substrate 300 as shown in FIG. 3D after placing the second structure 103 on the sixth sheet 206. As with the element substrate 10, the support substrate 300 is removed by laser lift-off. Laser light is irradiated from the fourth surface 304 side of the support substrate 300. By removing the support substrate 300, the surface of the covering member 230 opposite the sixth sheet 206 is exposed.

[0073] The method for manufacturing a light emitting device according to the third embodiment includes a step of removing the support substrate 300, then cutting the covering member 230 at portions located between the plurality of light emitting elements 20, and separating the covering member 230 into a plurality of covering portions 231, as shown in FIG. 3E. Each of the plurality of light emitting elements 20 is covered by a covering portion 231. The covering portion 231 covers the side surface, electrode placement surface 20B, first electrode 22A, and second electrode 22B of the light emitting element 20. As in the first embodiment, it is preferable to cut the covering member 230 using, for example, a dicing blade.

[0074] The manufacturing method of the light-emitting device according to the third embodiment includes a step of separating the covering member 230 into a plurality of covering portions 231, followed by a step of expanding the first sheet 201 so as to widen the distance between the plurality of light-emitting elements 20 to a second distance d2 greater than the first distance d1, as shown in FIG. 3F, with each of the plurality of light-emitting elements 20 covered by the covering portion 231.

[0075] For example, the light emitting elements 20 and the covering portion 231 in the second structure 103, obtained by removing the element substrate 10 from the first structure 101, can be transferred from the sixth sheet 206 shown in FIG. 3E to the first sheet 201 shown in FIG. 3F , and then the first sheet 201 can be expanded. In this case, similar to the first embodiment, the first sheet 201 can be expanded with the covering portion 231 positioned between the electrode arrangement surface 20B of the light emitting element 20 and the first sheet 201. The entire surface of the electrode arrangement surface 20B side of the light emitting element 20 is adhered to the first sheet 201 by the covering portion 231, thereby increasing the fixing force of the light emitting element 20 to the first sheet 201. This makes it difficult for the light emitting elements 20 to lift off the first sheet 201 when the first sheet 201 is expanded, thereby reducing unintended cracking of the light emitting elements 20.

[0076] Alternatively, similar to the second embodiment, the sixth sheet 206 shown in Fig. 3E may be expanded with the light-emitting surfaces 20A of the light-emitting elements 20 bonded to the sixth sheet 206 to increase the distance between the plurality of light-emitting elements 20 to a second distance d2 greater than the first distance d1. In this case, the step of transferring the light-emitting elements 20 and the covering portion 231 from the sixth sheet 206 to the first sheet 201 shown in Fig. 3F is not necessary.

[0077] In the manufacturing method of the light-emitting device of the third embodiment, after the step of widening the distance between the plurality of light-emitting elements 20 to the second distance d2, the steps of arranging the wavelength conversion member 40, removing the covering portion 231 and preparing the intermediate element 60, arranging the intermediate element 60 on the wiring substrate 70, forming the light-reflective member 90, and singulating can be continued, as in the first embodiment.

[0078] Embodiments of the present invention may include the following method for manufacturing a light emitting device.

[0079] [Section 1] a step of preparing a first structure including: an element substrate having a first surface and a second surface located opposite to the first surface; a plurality of light-emitting elements arranged on the first surface of the element substrate at a first distance from each other, each having a light-emitting surface facing the first surface; and a covering member covering the plurality of light-emitting elements on the first surface side and arranged between the plurality of light-emitting elements; removing the element substrate from the first structure; cutting the covering member of the second structure obtained by removing the element substrate from the first structure at portions located between the plurality of light emitting elements, and separating the covering member into a plurality of covering portions; expanding the sheet supporting the second structure so as to widen the distance between the plurality of light-emitting elements to a second distance greater than the first distance while each of the plurality of light-emitting elements is covered by the covering portion; disposing a wavelength converting member on the light emitting surface of each of the plurality of light emitting elements spaced apart from one another by the second distance; A method for manufacturing a light emitting device comprising: [Section 2] Item 2. A method for manufacturing a light emitting device according to item 1, wherein in the step of expanding the sheet, the covering portion is positioned between the sheet and a surface of the light emitting element that is located opposite the light emitting surface. [Section 3] After the step of arranging the wavelength conversion member, removing the covering portion and preparing a plurality of intermediate elements each including the light emitting element and the wavelength conversion member arranged on the light emitting surface; placing the plurality of intermediate elements on a wiring substrate; Item 3. The method for manufacturing a light emitting device according to item 1 or 2, further comprising: [Section 4] Item 4. The method for manufacturing a light emitting device according to item 3, wherein in the step of removing the covering portion, the covering portion is removed with a remover. [Section 5] After the step of arranging the plurality of intermediate elements on the wiring substrate, a step of covering a side surface of the intermediate elements with a light reflective member; cutting the light reflective member and the wiring substrate between the plurality of intermediate elements; Item 5. A method for producing a light-emitting device according to item 3 or 4, comprising: [Section 6] 6. The method for manufacturing a light emitting device according to any one of items 1 to 5, wherein in the step of preparing the first structure, the covering member is made of polyimide resin. [Section 7] 6. The method for manufacturing a light emitting device according to any one of items 1 to 5, wherein in the step of preparing the first structure, the covering member has a silicone resin and light scattering particles contained in the silicone resin. [Section 8] 8. The method for manufacturing a light emitting device according to any one of items 1 to 7, wherein in the step of separating the covering member into the plurality of covering portions, the covering member is cut using a dicing blade. [Section 9] In the step of preparing the first structure, the element substrate is a sapphire substrate, Item 9. The method for manufacturing a light-emitting device according to any one of items 1 to 8, wherein in the step of removing the element substrate, laser light is irradiated from the second surface side of the element substrate toward an interface between the light-emitting element and the first surface of the element substrate, and an interface between the covering member and the first surface of the element substrate, thereby removing the element substrate.

[0080] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. All forms that can be implemented by a person skilled in the art through appropriate design modifications based on the above-described embodiments of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention. In addition, a person skilled in the art may come up with various modifications and alterations within the scope of the concept of the present invention, and these modifications and alterations also fall within the scope of the present invention. [Explanation of symbols]

[0081] 1...light emitting device, 10...element substrate, 11...first surface, 12...second surface, 20...light emitting element, 20A...light emitting surface, 20B...electrode arrangement surface, 21...semiconductor layer, 22A...first electrode, 22B...second electrode, 30...first covering member, 31...covering portion, 32...groove, 40...wavelength conversion member, 50...adhesive member, 60...intermediate element, 70...wiring substrate, 71...insulating base material, 72A...first wiring portion, 72B...second wiring portion, 73A...first external connection connection portion, 73B...second external connection portion, 80...joining member, 90...light-reflective member, 101...first structure, 102...second structure, 103...second structure, 130...second covering member, 201...first sheet, 202...second sheet, 203...third sheet, 204...fourth sheet, 205...fifth sheet, 206...sixth sheet, 230...covering member, 231...covering portion, 300...support substrate, d1...first distance, d2...second distance

Claims

1. a step of preparing a first structure including: an element substrate having a first surface and a second surface located opposite to the first surface; a plurality of light-emitting elements arranged on the first surface of the element substrate at a first distance from each other, each having a light-emitting surface facing the first surface; and a covering member covering the plurality of light-emitting elements on the first surface side and arranged between the plurality of light-emitting elements; removing the device substrate from the first structure; cutting the covering member of the second structure obtained by removing the element substrate from the first structure at portions located between the plurality of light emitting elements, and separating the covering member into a plurality of covering portions; expanding the sheet supporting the second structure so as to increase the distance between the plurality of light-emitting elements to a second distance greater than the first distance while each of the plurality of light-emitting elements is covered by the covering portion; a step of disposing a wavelength converting member on the light emitting surface of each of the plurality of light emitting elements spaced apart from each other by the second distance; A method for manufacturing a light emitting device comprising:

2. The method for manufacturing a light emitting device according to claim 1 , wherein in the step of expanding the sheet, the covering portion is positioned between the sheet and a surface of the light emitting element that is positioned opposite the light emitting surface.

3. After the step of arranging the wavelength conversion member, removing the covering portion and preparing a plurality of intermediate elements each including the light emitting element and the wavelength conversion member arranged on the light emitting surface; placing the plurality of intermediate elements on a wiring substrate; The method for manufacturing a light emitting device according to claim 1 or 2, further comprising:

4. The method for manufacturing a light emitting device according to claim 3 , wherein in the step of removing the covering portion, the covering portion is removed with a remover.

5. After the step of arranging the plurality of intermediate elements on the wiring substrate, a step of covering a side surface of the intermediate elements with a light reflective member; cutting the light reflective member and the wiring substrate between the plurality of intermediate elements; The method for manufacturing a light emitting device according to claim 3 , comprising:

6. 3. The method for manufacturing a light emitting device according to claim 1, wherein in the step of preparing the first structure, the covering member is made of polyimide resin.

7. 3. The method for manufacturing a light emitting device according to claim 1, wherein in the step of preparing the first structure, the covering member has a silicone resin and light scattering particles contained in the silicone resin.

8. 3. The method for manufacturing a light emitting device according to claim 1, wherein the step of separating the covering member into the plurality of covering portions comprises cutting the covering member using a dicing blade.

9. In the step of preparing the first structure, the element substrate is a sapphire substrate, 3. The method for manufacturing a light-emitting device according to claim 1, wherein in the step of removing the element substrate, the element substrate is removed by irradiating laser light from the second surface side of the element substrate toward the interface between the light-emitting element and the first surface of the element substrate, and the interface between the covering member and the first surface of the element substrate.

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