Light-emitting device and measurement device

Abstract

To shorten the distances from switching parts to respective light-emitting sections as compared with a case in which switching parts which switch a plurality of light-emitting sections between a light-emitting state and a non-light-emitting state are provided at one place on a substrate.SOLUTION: A light-emitting device comprises: a substrate; a light-emitting part which is provided on the substrate and has a plurality of light-emitting sections; a first switching part which is provided on the substrate and switches the first light-emitting section of the light-emitting part between a light-emitting state and a non-light-emitting state; and a second switching part which is provided on the substrate on the opposite side from the first switching part across the light-emitting part, and switches a second light-emitting section, different from the first light-emitting section, of the light-emitting part between a light-emitting state and a non-light-emitting state.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to a light emitting device and a measurement device. [Background technology]

[0002] Patent document 1 discloses a light-emitting device comprising a substrate, a light-emitting element section provided on the substrate and having 12 areas each having a light-emitting element, and a transfer circuit that supplies a transfer signal to the light-emitting element section to change it between an emitting state and a non-emitting state. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2023-42123 Summary of the Invention [Problem to be solved by the invention]

[0004] In a light-emitting device having multiple light-emitting sections on a substrate, if a switching unit that switches each light-emitting section between a light-emitting state and a non-light-emitting state is located in one place on the substrate, there may be many places where the distance from the switching unit to the light-emitting section is long. The present invention aims to shorten the distance from a switching unit that switches multiple light-emitting sections between a light-emitting state and a non-light-emitting state to each light-emitting section, compared to when the switching unit is located in one place on a substrate. [Means for solving the problem]

[0005] The invention described in claim 1 is a light-emitting device comprising a substrate, a light-emitting section provided on the substrate and having a plurality of light-emitting sections, a first switching section provided on the substrate and switching a first light-emitting section of the light-emitting section between an emitting state and a non-emitting state, and a second switching section provided on the substrate on the opposite side of the light-emitting section from the first switching section and switching a second light-emitting section different from the first light-emitting section of the light-emitting section between an emitting state and a non-emitting state. The invention described in claim 2 is a light-emitting device described in claim 1, in which the first switching unit and the second switching unit are connected by wiring, and the first light-emitting section and the second light-emitting section of the light-emitting unit are switched between a light-emitting state and a non-light-emitting state in sequence by a signal transmitted by the wiring. The invention described in claim 3 is a light-emitting device described in claim 2, in which the substrate is rectangular having two opposing first sides and two opposing second sides connecting the first sides, the first switching portion is provided along one of the first sides, the second switching portion is provided along the other of the first sides, and the wiring is provided along one of the second sides. A fourth aspect of the present invention is the light emitting device according to the third aspect, further comprising a terminal provided along the other of the second side of the substrate, for receiving a supply of power to the light emitting portion. The invention described in claim 5 is a light-emitting device described in claim 2, in which the electrical resistance between the first switching unit and the first light-emitting section, and the electrical resistance between the second switching unit and the second light-emitting section are greater than the electrical resistance of the wiring. The invention described in claim 6 is the light-emitting device described in claim 1, wherein the light-emitting section is arranged two-dimensionally with multiple light-emitting sections lined up in a first direction and a second direction intersecting the first direction, the number of light-emitting sections lined up in the first direction is greater than the number of light-emitting sections lined up in the second direction, and the first switching section and the second switching section are arranged along the first direction. The invention described in claim 7 is the light-emitting device described in claim 6, wherein the first light-emitting sections are arranged in the first direction, the second light-emitting sections are arranged in the second direction relative to each of the first light-emitting sections, there is an overlap between an area in the first light-emitting section where light is irradiated by one light-emitting section and an area in the second light-emitting section where light is irradiated by another light-emitting section arranged in the second direction relative to the one light-emitting section, and the first switching unit and the second switching unit select either the one light-emitting section or the other light-emitting section and switch it to an emitting state. An eighth aspect of the present invention is the light emitting device according to the seventh aspect, wherein the first light emitting section and the second light emitting section emit different amounts of light. The invention described in claim 9 is a light-emitting device described in claim 7, further comprising an optical system that guides light emitted from each of the light-emitting sections so that there is an overlap between an area irradiated with light by one of the light-emitting sections in the first light-emitting section and an area irradiated with light by another light-emitting section in the second light-emitting section, wherein the optical system is such that the degree of diffusion of the light emitted from each of the light-emitting sections in the first direction is greater than the degree of diffusion in the second direction. The invention described in claim 10 is the light-emitting device described in claim 7, further comprising an optical system that guides light emitted from each of the light-emitting sections so that there is an overlap between the area illuminated by light from one light-emitting section of the first light-emitting section and the area illuminated by light from the other light-emitting section of the second light-emitting section, and the optical system does not act optically in the second direction but acts optically in the first direction. The invention described in claim 11 is a measurement device comprising a light emitting device described in any one of claims 1 to 10 and an acquisition unit that receives reflected light from a measured object irradiated with light emitted from the light emitting device and acquires information about the measured object. [Effects of the Invention]

[0006] According to the inventions of claims 1 and 11, the distance from the switching unit to each light-emitting section can be shortened compared to when a switching unit that switches multiple light-emitting sections between a light-emitting state and a non-light-emitting state is provided in one location on the substrate. According to the invention of claim 2, the light-emitting section connected to the first switching section and the light-emitting section connected to the second switching section are prevented from unintentionally lighting up simultaneously, compared to when the first switching section and the second switching section are not connected. According to the invention of claim 3, it is possible to prevent the wiring from becoming complicated, compared to when the wiring is not provided along the second side but is provided on the back surface or the like. According to the invention of claim 4, it is possible to prevent the device from becoming larger in size in the direction along the first side, compared to when the terminal is not provided along the other side of the second side. According to the fifth aspect of the invention, the distance between the first and second switching sections, which have a high electrical resistance, and the light-emitting sections can be made shorter than when the switching sections are provided in one place on the substrate. According to the invention of claim 6, the distance between each light-emitting section and the first switching section or the second switching section can be made shorter than when the first switching section and the second switching section are arranged along the second direction. According to the seventh aspect of the invention, one light emitting section and another light emitting section can irradiate the same area with light. According to the eighth aspect of the invention, it is possible to select the amount of light to be irradiated to each of the areas aligned in the first direction. According to the invention of claim 9, light can be irradiated onto a similar area in the second direction compared to when the degree of diffusion in the first direction by the optical system is the same as the degree of diffusion in the second direction. According to the invention of claim 10, the light is more stable than when the optical system acts optically in the second direction. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating an example of a measurement device to which the present embodiment is applied. [Figure 2] FIG. 1 is a diagram illustrating a light source device to which the present embodiment is applied, showing an equivalent circuit of the light source device. [Figure 3] FIG. 1 is a diagram illustrating the planar shape of a light-emitting chip to which the present embodiment is applied, and is a plan view of the light-emitting chip as viewed from the light-emitting side. [Figure 4] 4(a) and 4(b) are enlarged views of the light-emitting chip shown in FIG. [Figure 5] FIG. 5 is an example of a cross-sectional view of the light-emitting chip, taken along line VV in FIG. 4(a). [Figure 6] 10 is a timing chart illustrating an example of the operation of the light source device and the light-emitting chip. [Figure 7]FIG. 10 is a diagram illustrating the planar shape of a light-emitting chip to which the second embodiment is applied, and is a plan view of the light-emitting chip as seen from the light-emitting side. [Figure 8] 3A and 3B are diagrams illustrating the relationship between the light-emitting chip and the optical system according to the present embodiment. [Figure 9] 3A and 3B are diagrams illustrating the relationship between the light-emitting chip and the optical system according to the present embodiment. [Figure 10] 10 is a diagram showing an example of the illuminance distribution of one light-emitting section belonging to a light-emitting section group and the illuminance distribution of another light-emitting section belonging to the light-emitting section group. FIG. [Figure 11] 10 is a diagram showing an example of an irradiation surface onto which light emitted from a light-emitting section of a light-emitting unit is irradiated. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Here, we will explain the case where a light source device 1 including a light-emitting chip 10, which is an example of a light-emitting component, is applied to a measurement device 100 that measures the three-dimensional shape (hereinafter referred to as 3D shape) of an object to be measured.

[0009] [Embodiment 1] (Measuring device 100) FIG. 1 is a diagram showing an example of a measurement device 100 to which this embodiment is applied. The measurement device 100 of this embodiment measures the three-dimensional shape of an object. Hereinafter, the three-dimensional shape will be referred to as a 3D shape. The measurement device 100 is a device that measures the 3D shape based on the so-called ToF (Time of Flight) method, which uses the time of flight of light. The measurement device 100 includes a light source device 1 as an example of a light-emitting device including a light-emitting chip 10 and a control unit 12, and a three-dimensional sensor 5. Hereinafter, the three-dimensional sensor 5 will be referred to as a 3D sensor 5. In the ToF method, the time from when light is emitted from the light source device 1 to when the light is reflected by the object and received by the 3D sensor 5 is measured. Then, the distance to the object is calculated from the time acquired by the 3D sensor 5, and the 3D shape of the object is identified. Measuring a 3D shape may also be referred to as three-dimensional measurement, 3D measurement, or 3D sensing.

[0010] The light source device 1 emits light toward an object. The 3D sensor 5 acquires the reflected light that is reflected by the object and returned. The 3D sensor 5 outputs distance information regarding the distance to the object based on the time from when the emitted light is emitted until when the reflected light is received, measured using the ToF method. The measurement device 100 may also include a measurement control unit 200. The measurement control unit 200 is configured as a computer including a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), etc., and identifies the 3D shape of the object based on the distance information acquired from the 3D sensor 5.

[0011] Furthermore, the measurement device 100 can be applied to recognizing an object from the identified 3D shape. For example, the measurement device 100 is installed in a portable information processing device and used to recognize the face of a user attempting to access the device. That is, the measurement device 100 acquires the 3D shape of the face of the accessing user, identifies whether or not the access is permitted, and permits use of the portable information processing device itself only if it is recognized that the user is authorized to access the device. The measuring device 100 can also be applied to cases where the 3D shape of an object is continuously measured, such as in augmented reality (AR).

[0012] (Light source device 1) Fig. 2 is a diagram for explaining a light source device 1 to which this embodiment is applied, and is a diagram showing an equivalent circuit of the light source device 1. Note that in the light source device 1 shown in Fig. 2, the positions of the φ1 terminal, φ2 terminal, Vga terminal, and φI terminal are not necessarily accurate. The light source device 1 includes a light-emitting chip 10 that emits light, an optical system 11 (see FIG. 1) that expands the irradiation range of the light emitted from the light-emitting chip 10, and a control unit 12 that controls the operation of the light-emitting chip 10. In this embodiment, the light source device 1 or the light emitting chip 10 is an example of a light emitting device.

[0013] (Control unit 12) The control unit 12 includes a transfer signal generating unit 120 , a lighting signal generating unit 140 , a reference potential supplying unit 160 , and a power supply potential supplying unit 170 . The transfer signal generating unit 120 generates transfer signals φ1 and φ2 that sequentially transfer an ON state to a plurality of transfer thyristors T (described later). The light-up signal generating unit 140 generates a light-up signal φI that supplies a current that lights up a VCSEL (described later). The reference potential supplying unit 160 supplies a reference potential Vsub. The power supply potential supplying unit 170 supplies a power supply potential Vga.

[0014] (Light emitting chip 10) 3 is a diagram illustrating the planar shape of the light-emitting chip 10 to which this embodiment is applied, and is a plan view of the light-emitting chip 10 as viewed from the light-emitting side. In FIG. 3, the right direction of the paper is the +x direction, the upward direction is the +y direction, and the front side of the paper is the +z direction, and the opposite directions are the -x, -y, and -z directions, respectively. Figures 4(a) to (b) are enlarged views of the light-emitting chip 10 shown in Figure 3, where Figure 4(a) is an enlarged view of the +y direction side of the light-emitting chip 10 in Figure 3, and Figure 4(b) is an enlarged view of the -y direction side of the light-emitting chip 10 in Figure 3. FIG. 5 is an example of a cross-sectional view of the light-emitting chip 10, taken along line VV in FIG. 4(a).

[0015] The light-emitting chip 10 includes a light-emitting unit 20 and a transfer unit 30 (see FIG. 2) on a substrate 80. The light-emitting chip 10 also includes a connection unit 40 on the substrate 80 that connects the light-emitting unit 20 and the transfer unit 30. Furthermore, the light emitting chip 10 includes a φ1 terminal, a φ2 terminal, a Vga terminal, a φI terminal, and a Vsub terminal. In this embodiment, the substrate 80 has a rectangular planar shape when viewed from the +z direction, with a first side extending in the x direction and a second side extending in the y direction.

[0016] The light emitting unit 20 includes a vertical cavity surface emitting laser (VCSEL), which will be referred to as VCSEL below. The light-emitting unit 20 has a plurality of light-emitting sections 21, each including at least one VCSEL. In this embodiment, the light-emitting unit 20 has a total of 12 light-emitting sections 21, six in the x direction and two in the y direction. Here, when distinguishing between the light-emitting sections 21, the 12 light-emitting sections 21 are referred to as light-emitting sections 21-1 to 21-12. Furthermore, the VCSELs included in the light-emitting sections 21-1 to 21-12 may be referred to as VCSEL1 to VCSEL12, respectively.

[0017] In the light-emitting unit 20 of this embodiment, the light-emitting sections 21-1 to 21-12 have the same area when viewed from the +z direction. When the same amount of power is supplied to the light-emitting sections 21-1 to 21-12, the light-emitting section 20 emits the same amount of light.

[0018] The light-emitting unit 20 has six light-emitting sections 21-1 to 21-6 arranged in this order from the -x direction to the +x direction. Hereinafter, these light-emitting sections 21-1 to 21-6 may be collectively referred to as light-emitting section group 21A. In this embodiment, the light-emitting sections 21-1 to 21-6 are an example of a first light-emitting section, and the light-emitting section group 21A is an example of a second light-emitting section group. Furthermore, the light-emitting unit 20 has six light-emitting sections 21-7 to 21-12 arranged in this order from the +x direction side to the -x direction side. Below, these light-emitting sections 21-7 to 21-12 may be collectively referred to as light-emitting section group 21B. In this embodiment, the light-emitting sections 21-7 to 21-12 are an example of a second light-emitting section, and the light-emitting section group 21B is an example of a second light-emitting section group.

[0019] Light emitting zone group 21A and light emitting zone group 21B are arranged side by side in this order from the +y direction side to the -y direction side. In addition, light emitting zones 21-1, 21-2, 21-3, 21-4, 21-5, and 21-6 belonging to light emitting zone group 21A are arranged side by side in the +y direction with light emitting zones 21-12, 21-11, 21-10, 21-9, 21-8, and 21-7 belonging to light emitting zone group 21B, respectively.

[0020] The light-emitting section 20 also includes twelve setting thyristors S1 to S12. Hereinafter, the setting thyristors S1 to S12 will be referred to as thyristors S when they are not to be distinguished from one another. Each setting thyristor S is connected in series with the VCSEL of the light-emitting section 21 having the same number. In addition, each setting thyristor S1 to S12 is stacked on the VCSEL1 to VCSEL12 of each light-emitting section 21-1 to 21-12 having the same number. In other words, each light-emitting section 21 includes a setting thyristor S and a VCSEL.

[0021] The transfer units 30 are driven to transfer the on state in sequence, and switch each of the light-emitting sections 21-1 to 21-12 of the light-emitting unit 20 between a light-emitting state and a non-light-emitting state. In the light-emitting chip 10 of this embodiment, the transfer units 30 are arranged around each of the light-emitting sections 21 of the light-emitting unit 20. The transfer unit 30 includes 12 transfer thyristors T1 to T12. Hereinafter, when the transfer thyristors T1 to T12 are not distinguished from one another, they are referred to as transfer thyristors T. The transfer unit 30 also includes 12 lower diodes UD1 to UD12. Hereinafter, when the lower diodes UD1 to UD12 are not distinguished from one another, they are referred to as lower diodes UD. In the transfer thyristors T1 to T12 and the lower diodes UD1 to UD12, the transfer thyristor T and the lower diode UD of the same number are connected in series. In addition, the transfer thyristor T is stacked on the lower diode UD formed on the substrate 80.

[0022] Furthermore, the transfer unit 30 includes coupling diodes D1 to D11 between each pair of the transfer thyristors T1 to T12 arranged in numerical order. Hereinafter, when there is no need to distinguish between the coupling diodes D1 to D11, they will be referred to as coupling diode D. Furthermore, the transfer section 30 includes power supply line resistors Rg1 to Rg12. Hereinafter, when there is no need to distinguish between the power supply line resistors Rg1 to Rg12, they will be referred to as power supply line resistors Rg.

[0023] The transfer unit 30 also includes one start diode SD. Furthermore, the transfer unit 30 includes current limiting resistors R1 and R2 that are provided to prevent excessive current from flowing through a first transfer signal line 72 to which a first transfer signal φ1 (described later) is supplied and a second transfer signal line 73 to which a second transfer signal φ2 (described later) is supplied.

[0024] In the light-emitting chip 10 of this embodiment, the transfer thyristors T1 to T12, the lower diodes UD1 to UD12, the coupling diodes D1 to D11, the power supply line resistances Rg1 to Rg12, the start diode SD, and the current limiting resistances R1 and R2 of the transfer unit 30 are arranged separately in two locations on the substrate 80. Additionally, in the light-emitting chip 10, the transfer thyristors T1 to T6, the lower diodes UD1 to UD6, the coupling diodes D1 to D6, the power supply line resistances Rg1 to Rg6, the start diode SD, and the current limiting resistance R1 of the transfer unit 30, and the transfer thyristors T7 to T12, the lower diodes UD7 to UD12, the coupling diodes D7 to D11, the power supply line resistances Rg7 to Rg12, and the current limiting resistance R2 are arranged separately in positions facing each other across the light-emitting unit 20.

[0025] As shown in Figure 4(a), in the light-emitting chip 10, the transfer thyristors T1 to T6, lower diodes UD1 to UD6, coupling diodes D1 to D6, power line resistors Rg1 to Rg6, start diode SD, and current limiting resistor R1 of the transfer unit 30 are arranged on the +y direction side with respect to the light-emitting unit 20. Specifically, the transfer thyristors T1 to T6, the lower diodes UD1 to UD6, the coupling diodes D1 to D6, and the power line resistances Rg1 to Rg6 are arranged in numerical order from the −x direction side to the +x direction side on the +y direction side of the light-emitting unit 20. The transfer thyristors T1 to T6, the lower diodes UD1 to UD6, the coupling diodes D1 to D6, and the power line resistances Rg1 to Rg6 are each arranged on the +y direction side of the light-emitting sections 21-1 to 21-6 of the light-emitting unit 20 that are assigned the same numbers. Furthermore, the start diode SD and the current limiting resistor R1 are arranged on the −x direction side of the transfer thyristor T1.

[0026] Also, as shown in Figure 4(b), in the light-emitting chip 10, the transfer thyristors T7 to T12, lower diodes UD7 to UD12, coupling diodes D7 to D11, power line resistors Rg7 to Rg12, and current limiting resistor R2 of the transfer unit 30 are arranged on the -y direction side with respect to the light-emitting unit 20. Specifically, the transfer thyristors T7 to T12, the lower diodes UD7 to UD12, the coupling diodes D7 to D11, and the power line resistances Rg7 to Rg12 are arranged in numerical order from the +x direction side to the −x direction side on the −y direction side of the light-emitting unit 20. The transfer thyristors T7 to T12, the lower diodes UD7 to UD12, the coupling diodes D7 to D11, and the power line resistances Rg7 to Rg12 are also arranged on the −y direction side of the light-emitting sections 21-7 to 21-12 of the light-emitting unit 20 that are assigned the same numbers. Furthermore, the current limiting resistor R2 is arranged on the −x direction side of the transfer thyristor T12.

[0027] In the following, of the transfer unit 30, the transfer thyristors T1 to T6, lower diodes UD1 to UD6, coupling diodes D1 to D6, power line resistors Rg1 to Rg6, start diode SD, and current limiting resistor R1 arranged on the +y direction side of the light emitting unit 20 in the light emitting chip 10 may be referred to as the first transfer unit 30A. The first transfer section 30A is provided along one of two sides of the rectangular substrate 80 that extend in the x direction. Similarly, among the transfer units 30, the transfer thyristors T7 to T12, lower diodes UD7 to UD12, coupling diodes D7 to D11, power line resistors Rg7 to Rg12, and current limiting resistor R2 arranged on the -y direction side of the light emitting unit 20 in the light emitting chip 10 may be referred to as the second transfer unit 30B. The second transfer section 30B is provided along one of two sides of the rectangular substrate 80 extending in the x direction, opposite to the side on which the first transfer section 30A is provided.

[0028] The first transfer unit 30A is an example of a first switching unit that switches the light emitting sections 21-1 to 21-6, which are an example of first light emitting sections, between a light emitting state and a non-light emitting state. The second transfer unit 30B is an example of a second switching unit that switches the light emitting sections 21-7 to 21-12, which are an example of second light emitting sections, between a light emitting state and a non-light emitting state. The first transfer unit 30A and the second transfer unit 30B are connected by a power supply line 71, a first transfer signal line 72, a second transfer signal line 73, and a light-up signal line 75, which will be described later. The power supply line 71, the first transfer signal line 72, the second transfer signal line 73, and the light-up signal line 75 are an example of wiring that connects the first switching unit and the second switching unit.

[0029] The VCSEL, lower diode UD, coupling diode D, and start diode SD are two-terminal semiconductor elements having an anode terminal and a cathode terminal. The setting thyristor S and transfer thyristor T are three-terminal semiconductor elements having an anode terminal, a gate terminal, and a cathode terminal. Hereinafter, the anode terminal, cathode terminal, and gate terminal may be abbreviated as anode, cathode, and gate, respectively.

[0030] In the light-emitting chip 10 of this embodiment, the VCSEL, setting thyristor S, lower diode UD, transfer thyristor T, coupling diode D, power line resistance Rg, and start diode SD are configured as an integrated circuit using a semiconductor laminate epitaxially grown on a common semiconductor substrate 80. Here, the semiconductor laminate is configured using, for example, a III-V group compound semiconductor such as GaAs, AlGaAs, or AlAs.

[0031] The connection section 40 connects the first transfer section 30A of the transfer section 30 to the light emitting sections 21-1 to 21-6 of the light emitting section 20, and connects the second transfer section 30B of the transfer section 30 to the light emitting sections 21-7 to 21-12 of the light emitting section 20. The connection unit 40 includes signal lines 41-1 to 41-6 that connect the transfer thyristors T1 to T6 of the first transfer unit 30A to the light-emitting sections 21-1 to 21-6 of the same numbers. The signal lines 41-1 to 41-6 connect the transfer thyristors T1 to T6 of the first transfer unit 30A to the setting thyristors S1 to S6 of the light-emitting sections 21-1 to 21-6 of the same numbers that belong to the light-emitting section group 21A.

[0032] The connection unit 40 also includes signal lines 41-7 to 41-12 that connect the transfer thyristors T7 to T12 of the second transfer unit 30B to the light-emitting sections 21-7 to 21-12 of the same numbers. The signal lines 41-7 to 41-12 connect the transfer thyristors T7 to T12 of the second transfer unit 30B to the setting thyristors S7 to S12 of the light-emitting sections 21-7 to 21-12 of the same numbers that belong to the light-emitting section group 21B. In the following description, the signal lines 41-1 to 41-12 will be referred to as signal line 41 when there is no need to distinguish between them.

[0033] In this example, the signal lines 41-1 to 41-6 of the connection unit 40 are arranged on the +y direction side of the light-emitting unit 20. The signal lines 41-7 to 41-12 of the connection unit 40 are arranged on the −y direction side of the light-emitting unit 20. In the light-emitting chip 10 of this embodiment, the signal lines 41-1 to 41-12 of the connection portion 40 are not provided between the light-emitting sections 21 of the light-emitting section 20.

[0034] The signal line 41 of the connection portion 40 is formed by evaporating a contact metal such as copper or aluminum. When the signal line 41 is formed from evaporated contact metal, the signal line 41 is thinner than wiring such as a power supply line 71, a first transfer signal line 72, a second transfer signal line 73, and a light-up signal line 75, which will be described later. Therefore, the electrical resistance of the signal line 41 is higher than the electrical resistance of wiring such as the power supply line 71, the first transfer signal line 72, the second transfer signal line 73, and the light-up signal line 75.

[0035] (Optical system 11) The optical system 11 is disposed on the +z direction side, which is downstream of the direction in which each light-emitting section 21 of the light-emitting unit 20 emits light, relative to the light-emitting chip 10. The optical system 11 expands the irradiation range of the light emitted from each light-emitting section 21 of the light-emitting chip 10 in the +z direction. The optical system 11 may be an optical component such as a diffuser plate that is disposed on the optical path of the light and diffuses the light by scattering, a diffractive optical element (DOE) that changes the angle of incident light and emits it, and / or a lens.

[0036] In the light source device 1, the light emitted from each light-emitting section 21 of the light-emitting chip 10 and having its illumination range expanded by the optical system 11 is irradiated onto an illumination surface at a certain distance in the +z direction from the light source device 1. In addition, the light emitted from each light-emitting section 21 of the light-emitting chip 10 is irradiated onto different sections of the illumination surface. In other words, the illumination surface is divided into a plurality of illumination sections corresponding to the plurality of light-emitting sections 21 of the light-emitting chip 10.

[0037] (Connection Relationship in the Light-Emitting Chip 10) Next, the electrical connections of the elements in the light-emitting chip 10 will be described. The anodes of the VCSEL and the lower diode UD are connected to the substrate 80 (common anode). These anodes are supplied with a reference potential Vsub via a back electrode 91, which is a Vsub terminal provided on the back surface of the substrate 80. The cathodes of the VCSELs are connected to the anodes of the setting thyristors S. The cathodes of the lower diodes UD are connected to the anodes of the transfer thyristors T. Note that this connection is the configuration when a p-type substrate 80 is used; when an n-type substrate is used, the polarity is reversed; when an intrinsic (i) type substrate with no added impurities is used, a terminal for supplying the reference potential Vsub is provided on the side of the substrate where the light emitting section 20 and transfer section 30 are provided.

[0038] Along the arrangement of the transfer thyristors T, the cathodes of the odd-numbered transfer thyristors T1, T3, T5, T7, T9, and T11 are connected to a first transfer signal line 72. The first transfer signal line 72 is connected to a φ1 terminal via a current-limiting resistor R1. A first transfer signal φ1 is supplied to this φ1 terminal from the transfer signal generating unit 120 of the control unit 12. Meanwhile, along the arrangement of the transfer thyristors T, the cathodes of the even-numbered transfer thyristors T2, T4, T6, T8, T10, and T12 are connected to a second transfer signal line 73. The second transfer signal line 73 is connected to a φ2 terminal via a current-limiting resistor R2. A second transfer signal φ2 is supplied to this φ2 terminal from the transfer signal generating unit 120 of the control unit 12.

[0039] The cathodes of the setting thyristors S are connected to a light-up signal line 75. The light-up signal line 75 is connected to a φI terminal. In the light-emitting chip 10, a light-up signal φI is supplied to the φI terminal from the light-up signal generating unit 140 of the control unit 12 via a current-limiting resistor RI provided outside the light-emitting chip 10. The light-up signal φI supplies a current for lighting the VCSEL.

[0040] The gates Gt1 to Gt12 of the transfer thyristors T1 to T12 are connected one-to-one to the gates Gs1 to Gs12 of the setting thyristors S1 to S12 with the same numbers. Therefore, the gates Gt1 to Gt12 and the gates Gs1 to Gs12 with the same numbers are electrically at the same potential. Therefore, for example, the gate is represented as Gt1 (gate Gs1) to indicate that the potential is the same. In the following, when there is no need to distinguish between the gates Gt1 to Gt12, they will be referred to as gate Gt. When there is no need to distinguish between the gates Gs1 to Gs12, they will be referred to as gate Gs.

[0041] Coupling diodes D1 to D11 are connected between pairs of gates Gt1 to Gt12 of the transfer thyristors T1 to T12 in numerical order. That is, the coupling diodes D1 to D11 are directly connected so that they are sandwiched between the gates Gt1 to Gt12. The coupling diode D1 is connected in the direction in which current flows from the gate Gt1 to the gate Gt2. The same applies to the other coupling diodes D2 to D11.

[0042] The gate Gt (gate Gs) of the transfer thyristor T is connected to a power supply line 71 via a power supply line resistance Rg provided corresponding to each transfer thyristor T. The power supply line 71 is connected to a Vga terminal. A power supply potential Vga is supplied to the Vga terminal from a power supply potential supply unit 170 of the control unit 12.

[0043] The gate Gt1 of the transfer thyristor T is connected to the cathode of the start diode SD. On the other hand, the anode of the start diode SD is connected to the second transfer signal line 73.

[0044] Next, the cross-sectional structure of the light-emitting chip 10 will be described. In the light emitting chip 10, a p-type anode layer 81, a light emitting layer 82, and an n-type cathode layer 83 constituting the VCSEL and the lower diode UD are provided in this order on a p-type substrate 80. In the light emitting chip 10 of this embodiment, the p-type anode layer 81 and the n-type cathode layer 83 are configured as distributed Bragg reflector (DBR) layers in which multiple semiconductor layers having refractive index differences are stacked. Therefore, hereinafter, the p-type anode layer 81 will be referred to as a p-anode (DBR) layer 81. Similarly, the n-type cathode layer 83 will be referred to as an n-cathode (DBR) layer 83.

[0045] In the light emitting chip 10, a tunnel junction layer 84 is provided on the n-cathode (DBR) layer 83. Furthermore, in the light-emitting chip 10, a p-type anode layer 85, an n-type gate layer 86, a p-type gate layer 87, and an n-type cathode layer 88, which constitute the setting thyristor S, the transfer thyristor T, the coupling diode D, and the power line resistance Rg, are provided in this order on the tunnel junction layer 84. Hereinafter, the p-type anode layer 85 will be referred to as the p-anode layer 85, the n-type gate layer 86 as the n-gate layer 86, the p-type gate layer 87 as the p-gate layer 87, and the n-type cathode layer 88 as the n-cathode layer 88.

[0046] Elements such as the VCSEL, lower diode UD, setting thyristor S, transfer thyristor T, and coupling diode D are composed of multiple islands separated by removing portions of each of the above layers through etching. Note that an island is sometimes referred to as a mesa, and the etching that forms the island (mesa) is sometimes referred to as mesa etching. In the light-emitting chip 10, these islands are connected to wiring such as a power supply line 71, a first transfer signal line 72, a second transfer signal line 73, and a light-up signal line 75 via through holes provided in the protective layer. The wiring such as the power supply line 71, the first transfer signal line 72, the second transfer signal line 73, and the light-up signal line 75 is formed by, for example, gold plating. In the following description, the protective layer and the through-holes will not be described.

[0047] As shown in FIG. 5, a back surface electrode 91 serving as a Vsub terminal is provided on the back surface of the substrate 80.

[0048] Here, the notation of the p-anode (DBR) layer 81 and the n-cathode (DBR) layer 83 corresponds to their functions when configuring a VCSEL and a lower diode UD. That is, the p-anode (DBR) layer 81 functions as an anode, and the n-cathode (DBR) layer 83 functions as a cathode. The notations of the p anode layer 85, n gate layer 86, p gate layer 87, and n cathode layer 88 correspond to the functions when configuring the setting thyristor S and the transfer thyristor T. That is, the p anode layer 85 functions as an anode, the n gate layer 86 and p gate layer 87 function as gates, and the n cathode layer 88 functions as a cathode. When the above layers constitute the coupling diode D and the power supply line resistance Rg, they have different functions as will be described later.

[0049] As will be described below, the multiple islands included in the light-emitting chip 10 include some islands that do not include part of the p-anode (DBR) layer 81, the light-emitting layer 82, the n-cathode (DBR) layer 83, the tunnel junction layer 84, the p-anode layer 85, the n-gate layer 86, the p-gate layer 87, and the n-cathode layer 88. For example, islands 301 and 302, which will be described later, do not include part of the n-cathode layer 88.

[0050] Next, an example of a planar layout of the light-emitting chip 10 will be described with reference to FIG. 3 and FIGS. 4(a) and 4(b). The island 301 is provided with the setting thyristor S1 and VCSEL1 of the light-emitting section 21. The island 302 is provided with the transfer thyristor T1 and the coupling diode D1. The island 303 is provided with the power line resistor Rg1. The island 304 is provided with the start diode SD. The island 305 is provided with the current limiting resistor R1, and the island 306 is provided with the current limiting resistor R2. The light-emitting chip 10 has a plurality of parallel islands similar to the islands 301, 302, and 303. These islands are provided with VCSEL2 to VCSEL12, setting thyristors S2 to S12, lower diodes UD2 to UD12, transfer thyristors T2 to T12, coupling diodes D2 to D11, and the like, similar to the islands 301, 302, and 303.

[0051] Here, the islands 301 to 306 will be described in detail with reference to FIGS. 3, 4(a), 5, etc. 5, the VCSEL1 provided on the island 301 is composed of a p-anode (DBR) layer 81, a light-emitting layer 82, and an n-cathode (DBR) layer 83. The setting thyristor S is composed of a p-anode layer 85, an n-gate layer 86, a p-gate layer 87, and an n-cathode layer 88 stacked via a tunnel junction layer 84 stacked on the n-cathode (DBR) layer 83 of the VCSEL1.

[0052] The n-cathode (DBR) layer 83 of the VCSEL includes a current confinement layer that confines current, as shown in black in Figure 5. The current confinement layer is formed by oxidizing a portion of the semiconductor layer that constitutes the n-cathode (DBR) layer exposed by mesa etching from the periphery, forming a current blocking portion β through which current does not flow easily. On the other hand, the central portion, where the portion of the semiconductor layer that constitutes the n-cathode (DBR) layer is not oxidized, forms a current passing portion α through which current flows easily. As shown in Figure 4(a) of the VCSEL1, the inside of the circle on the inner periphery is the current passing portion α, and the outside of the circle is the current blocking portion β. Note that the current blocking portion β does not need to completely block the flow of current; it is sufficient if it can concentrate the current in the current passing portion α. In other words, it is sufficient if the current blocking portion β is more difficult to pass than the current passing portion α. By providing the current blocking portion β, the power consumed by non-radiative recombination is reduced. By providing the current blocking portion β, it is possible to reduce power consumption and improve the light extraction efficiency. The light extraction efficiency is the amount of light that can be extracted per unit of power.

[0053] In the setting thyristor S1, an n-type ohmic electrode 321 is provided in the region 311 of the n-cathode layer 88. Hereinafter, the n-type ohmic electrode will be referred to as an n-ohmic electrode. The n-ohmic electrode 321 has a circular shape that surrounds the current passing portion α. In addition, in the setting thyristor S1, a p-type ohmic electrode 331 is provided on the p-gate layer 87 exposed by removing the n-cathode layer 88. Hereinafter, the p-type ohmic electrode will be referred to as a p-ohmic electrode. In the setting thyristor S1, the n-ohmic electrode 321 serves as a cathode terminal, and the p-ohmic electrode 331 serves as a terminal of the gate Gs1.

[0054] The lower diode UD1 provided in the island 302, like the VCSEL, is composed of a p-anode (DBR) layer 81, a light-emitting layer 82, and an n-cathode (DBR) layer 83. Like the setting thyristor S1, the transfer thyristor T1 is composed of a p-anode layer 85, an n-gate layer 86, a p-gate layer 87, and an n-cathode layer 88 stacked via a tunnel junction layer 84 stacked on the n-cathode (DBR) layer 83 of the lower diode UD1. In addition, an n-ohmic electrode 323 is provided in the region 313 on the n-cathode layer 88 of the transfer thyristor T1. In addition, in the transfer thyristor T1, a p-ohmic electrode 332 is provided on the p-gate layer 87 exposed by removing the n-cathode layer 88. In the transfer thyristor T1, the n-ohmic electrode 323 serves as a cathode terminal, and in the transfer thyristor T1, the p-ohmic electrode 332 serves as a terminal of the gate Gt1.

[0055] Similarly, the coupling diode D 1 provided in the island 302 is composed of a p-gate layer 87 and an n-cathode layer 88 . The coupling diode D1 is provided with an n-ohmic electrode 324 in the region 314 on the n-cathode layer 88. The coupling diode D1 has a cathode terminal at the n-ohmic electrode 324. Furthermore, the coupling diode D1 has an anode terminal at the p-ohmic electrode 332. Here, the anode terminal of the coupling diode D1 is the same as the gate Gt1.

[0056] The power supply line resistance Rg1 provided in the island 303 is composed of the p-gate layer 87. That is, the power supply line resistance Rg1 is provided with a pair of p-ohmic electrodes 333, 334 on the p-gate layer 87 exposed by removing the n-cathode layer 88. The power supply line resistance Rg1 is provided with the p-gate layer 87 between the pair of p-ohmic electrodes 333, 334 as a resistor.

[0057] The start diode SD provided in the island 304 is composed of a p-gate layer 87 and an n-cathode layer 88. That is, the start diode SD has, as its cathode terminal, an n-ohmic electrode 325 provided on a region 315 of the n-cathode layer 88. Furthermore, the start diode SD has, as its anode terminal, a p-ohmic electrode 335 provided on the p-gate layer 87 exposed by removing the n-cathode layer 88. The current limiting resistor R1 provided in island 305 and the current limiting resistor R2 provided in island 306 are provided in the same manner as the power line resistor Rg1 provided in island 303, and each uses the p-gate layer 87 between two p-ohmic electrodes (unnumbered) as a resistor.

[0058] Next, the connections between the elements will be described. The light-on signal line 75 is connected to an n-ohmic electrode 321 which is the cathode terminal of the setting thyristor S of the light-emitting section 21-1 provided in the island 301. The light-on signal line 75 is connected to the cathode terminals of the setting thyristors S of the other light-emitting sections 21 provided in islands similar to the island 301.

[0059] The first transfer signal line 72 includes a first extension portion 72a extending in the x direction on the +y direction side of the light-emitting unit 20, and a second extension portion 72b extending in the x direction on the −y direction side of the light-emitting unit 20. The first transfer signal line 72 also includes a connection portion 72c extending in the y direction on the +x direction side of the light-emitting unit 20, connecting an end portion of the first extension portion 72a on the +x direction side to an end portion of the second extension portion 72b on the +x direction side. Specifically, the first extension portion 72a of the first transfer signal line 72 is provided to extend along the transfer thyristors T1 to T6 aligned in the x direction. The second extension portion 72b of the first transfer signal line 72 is provided to extend along the transfer thyristors T7 to T11 aligned in the x direction.

[0060] The first transfer signal line 72 is connected to an n-ohmic electrode 323, which is the cathode terminal of the transfer thyristor T1 provided in the island 302. The first transfer signal line 72 is connected to the cathode terminals of other odd-numbered transfer thyristors T provided in islands similar to the island 302. Specifically, the cathode terminals of the transfer thyristors T1, T3, and T5 are connected to a first extension 72a of the first transfer signal line 72. Furthermore, the transfer thyristors T7, T9, and T11 are connected to a second extension 72b of the first transfer signal line 72. Furthermore, the first transfer signal line 72 is connected to the φ1 terminal via a current limiting resistor R1 provided in the island 305. In addition, the end of the first extension portion 72a of the first transfer signal line 72 on the −x direction side is connected to the φ1 terminal.

[0061] The second transfer signal line 73 includes a first extension portion 73a extending in the x direction on the +y direction side of the light-emitting unit 20, and a second extension portion 73b extending in the x direction on the −y direction side of the light-emitting unit 20. The second transfer signal line 73 also includes a connection portion 73c extending in the y direction on the +x direction side of the light-emitting unit 20, connecting an end portion of the first extension portion 73a on the +x direction side to an end portion of the second extension portion 73b on the +x direction side. Specifically, the first extension portion 73a of the second transfer signal line 73 is provided to extend along the transfer thyristors T1 to T6 aligned in the x direction. The second extension portion 73b of the second transfer signal line 73 is provided to extend along the transfer thyristors T7 to T12 aligned in the x direction. In this example, the first extension portion 73a, the connection portion 73c, and the second extension portion 73b of the second transfer signal line 73 are arranged closer to the inner periphery of the light-emitting chip 10 than the second extension portion 72b, the connection portion 72c, and the first extension portion 72a of the first transfer signal line 72.

[0062] The second transfer signal line 73 is connected to n ohmic electrodes (not referenced) that are cathode terminals of the even-numbered transfer thyristors T provided in the islands not referenced. Specifically, the cathode terminals of the transfer thyristors T6, T4, and T2 are connected to a first extension 73a of the second transfer signal line 73. Furthermore, the cathode terminals of the transfer thyristors T12, T10, and T8 are connected to a second extension 73b of the second transfer signal line 73. Furthermore, the second transfer signal line 73 is connected to the φ2 terminal via a current limiting resistor R2 provided in the island 306. In addition, the end of the second extension portion 73b of the second transfer signal line 73 on the −x direction side is connected to the φ2 terminal. Furthermore, the second transfer signal line 73 is connected to a p-ohmic electrode 335 that is the anode terminal of the start diode SD provided on the island 304. In addition, the end of the first extension portion 73a of the second transfer signal line 73 on the −x direction side is connected to the p-ohmic electrode 335 that is the anode terminal of the start diode SD.

[0063] The power supply line 71 includes a first extending portion 71a extending in the x direction on the +y direction side of the light-emitting unit 20, and a second extending portion 71b extending in the x direction on the −y direction side of the light-emitting unit 20. The power supply line 71 also includes a connection portion 71c extending in the y direction on the +x direction side of the light-emitting unit 20, connecting an end of the first extending portion 71a on the +x direction side to an end of the second extending portion 71b on the +x direction side. Specifically, the first extending portion 71a of the power supply line 71 is provided to extend along the power supply line resistances Rg1 to Rg6 aligned in the x direction. The second extending portion 71b of the power supply line 71 is provided to extend along the power supply line resistances Rg7 to Rg12 aligned in the x direction.

[0064] The power supply line 71 is connected to a p-ohmic electrode 334, which is one terminal of a power supply line resistor Rg1 provided on the island 303. The power supply line 71 is connected to p-ohmic electrodes (without reference numerals), which are one terminal of other power supply line resistors Rg2 to Rg12. Specifically, one terminal of each of the power line resistors Rg2 to Rg6 is connected to the first extending portion 71a of the power line 71. Furthermore, one terminal of each of the power line resistors Rg7 to Rg12 is connected to the second extending portion 71b of the power line 71. Furthermore, the power supply line 71 is connected to the Vga terminal. In addition, the end of the first extending portion 71a of the power supply line 71 on the −x direction side is connected to the Vga terminal.

[0065] A p-ohmic electrode 332, which is the anode terminal of the transfer thyristor T1 provided in the island 302, is connected to a p-ohmic electrode 333, which is the other terminal of the power supply line resistance Rg1 provided in the island 303, by a connection wiring 77. In addition, anode terminals of other transfer thyristors T2 to T12 provided in an island similar to the island 302 are connected to the other terminals of other power supply line resistances Rg2 to Rg12 provided in an island similar to the island 303 by the connection wiring 77.

[0066] Furthermore, a p-ohmic electrode 332 serving as the anode terminal of the transfer thyristor T1 provided on the island 302 is connected by a connection wiring 78 to an n-ohmic electrode 325 serving as the cathode terminal of the start diode SD provided on the island 304.

[0067] Furthermore, the n-ohmic electrode 324, which is the cathode terminal of the coupling diode D1 provided in the island 302, is connected to the p-ohmic electrode (no symbol) which is the gate terminal Gt2 of the adjacent transfer thyristor T2, by a connection wiring 79. Similarly, the cathode terminals of the coupling diodes D2 to D11 are connected to the gate terminals Gt3 to Gt12 of the transfer thyristors T3 to T12 which are numbered one higher, by the connection wiring 79. Note that in the light-emitting chip 10 of this embodiment, the coupling diode D6 and the transfer thyristor T7 are disposed at positions spaced apart in the y direction with the light-emitting unit 20 interposed therebetween. For this reason, the connection wiring 79 which connects the cathode terminal of the coupling diode D6 and the gate terminal Gt7 of the transfer thyristor T7 has a shape which extends in the y direction on the +x-direction side of the light-emitting unit 20, as shown in FIG. 3 .

[0068] Furthermore, a p-ohmic electrode 331 serving as the gate terminal Gs1 of the setting thyristor S1 provided on the island 301 is connected to a p-ohmic electrode 332 serving as the gate terminal Gt1 of the transfer thyristor T1 provided on the island 302 by a signal line 41-1. The gate terminals Gs2 to G12 of the other setting thyristors S2 to S12 provided on islands similar to the island 301 are connected to the gate terminals Gt2 to Gt12 of the transfer thyristors T2 to T12 with the same numbers provided on islands similar to the island 302 by signal lines 41-2 to 41-12. In the light-emitting chip 10 of this embodiment, the gate terminals Gs1 to Gs12 of the setting thyristors S1 to S12 and the gate terminals Gt1 to Gt12 of the transfer thyristors T1 to T12 having the same numbers are arranged side by side in the y direction, so that the signal lines 41-1 to 41-12 are linearly extended in the y direction from the gate terminals Gs1 to Gs12 to the gate terminals Gt1 to Gt12, respectively.

[0069] In addition, in the light-emitting chip 10 of this embodiment, the connection portion 71c of the power supply line 71, the connection portion 72c of the first transfer signal line 72, and the connection portion 73c of the second transfer signal line 73, which are examples of wiring connecting the first transfer section 30A and the second transfer section 30B, are arranged along one side extending in the y direction of the rectangular substrate 80. Furthermore, in the light-emitting chip 10 of this embodiment, the φ1 terminal, the φ2 terminal, the Vga terminal, and the φI terminal, which are examples of terminals that receive power supply to the light-emitting unit 20, are provided along the other side extending in the y direction of the rectangular substrate 80.

[0070] The above connections and configuration are for when a p-type substrate 80 is used, and the polarity is reversed when an n-type substrate is used. When an i-type substrate is used, a terminal for supplying the reference potential Vsub is provided on the side of the substrate where the light-emitting unit 20, transfer unit 30, and connection unit 40 are provided. The connections and configuration are the same whether a p-type substrate is used or an n-type substrate is used.

[0071] (thyristor) Next, the basic operations of the transfer thyristor T and the setting thyristor S of the light-emitting chip 10 will be described. Note that, hereinafter, the transfer thyristor T and the setting thyristor S may be simply referred to as thyristors. As described above, a thyristor is a semiconductor element having three terminals, namely, an anode terminal, a cathode terminal, and a gate terminal, and is configured by stacking, on a substrate 80, a p-anode layer 85 and a p-gate layer 87, which are p-type semiconductor layers made of GaAs, AlGaAs, AlAs, or the like, and an n-gate layer 86 and an n-cathode layer 88, which are n-type semiconductor layers. In other words, the thyristor has a pnpn structure. Here, the forward potential (diffusion potential) Vd of the pn junction formed by the p-type semiconductor layer and the n-type semiconductor layer is described as 1.5 V, as an example.

[0072] In the following description, as an example, the reference potential Vsub supplied to the rear electrode 91 (see FIG. 5) serving as the Vsub terminal is described as a high-level potential (hereinafter referred to as "H"), 0V, and the power supply potential Vga supplied to the Vga terminal is described as a low-level potential (hereinafter referred to as "L"), -5V. Therefore, these may be described as "H" (0V) or "L" (-5V).

[0073] First, we will explain the operation of a single thyristor. Here, we assume that the anode of the thyristor is 0V. A thyristor in the off state, where no current flows between the anode and cathode, transitions to the on state (turns on) when a potential lower than the threshold voltage (a negative potential with a large absolute value) is applied to the cathode. Here, the threshold voltage of a thyristor is the gate potential minus the forward potential Vd (1.5V) of the pn junction. When the thyristor is turned on, the gate of the thyristor becomes a potential close to the potential of the anode terminal. In this case, the anode is 0V, so the gate becomes 0V. Also, the cathode of the thyristor in the on state becomes a potential close to the potential obtained by subtracting the forward potential Vd (1.5V) of the pn junction from the potential of the anode. In this case, since the anode is 0V, the cathode of the thyristor in the on state becomes a potential close to -1.5V (a negative potential with an absolute value greater than 1.5V). The potential of the cathode is set in relation to the power supply that supplies current to the thyristor in the on state.

[0074] A thyristor in the ON state transitions to the OFF state (turns off) when the cathode reaches a potential (a negative potential with a small absolute value, 0 V, or a positive potential) higher than the potential required to maintain the ON state (a potential close to the above-mentioned -1.5 V). On the other hand, if a potential lower than the potential required to maintain the on state (a negative potential with a large absolute value) is continuously applied to the cathode of a thyristor in the on state and a current sufficient to maintain the on state (maintenance current) is supplied, the thyristor will maintain the on state.

[0075] Next, the operation of the VCSEL and the setting thyristor S stacked together will be described. The setting thyristor S is stacked with the VCSEL and connected in series. Therefore, the potential of the light-up signal φI is divided between the VCSEL and the setting thyristor S. Here, the explanation will be given assuming that the voltage applied to the VCSEL is −1.7 V. Then, when the setting thyristor S is in the off state, −3.3 V is applied to the setting thyristor S. As described above, when the threshold voltage of the setting thyristor S in the OFF state is greater in absolute value than −3.3 V, the potential applied to the cathode of the setting thyristor S is lower than the threshold voltage, and the setting thyristor S turns on. This causes current to flow through the series-connected VCSEL and setting thyristor S, causing the VCSEL to emit light. On the other hand, when the threshold voltage of the setting thyristor S is smaller in absolute value than −3.3 V, the setting thyristor S does not turn on and remains in the OFF state. When the setting thyristor S turns on, the absolute value of the voltage applied to the series-connected VCSEL and setting thyristor S decreases due to the current-limiting resistor RI (see Figure 2). However, if the voltage applied to the setting thyristor S is a voltage that maintains the setting thyristor S in the on state, the setting thyristor S will maintain the on state. This allows the VCSEL to continue emitting light.

[0076] The voltages shown above are merely examples, and should be changed depending on the emission wavelength and light intensity of the VCSEL. In that case, the potential ("L") of the light-up signal φI can be adjusted.

[0077] (Operations of the Light Source Device 1 and the Light-Emitting Chip 10) Next, the operations of the light source device 1 and the light-emitting chip 10 will be described. <Timing chart> Fig. 6 is a timing chart illustrating an example of the operation of the light source device 1 and the light-emitting chip 10. Fig. 6 is a timing chart of a part that controls lighting or non-lighting of VCSEL1 to VCSEL4 included in the light-emitting sections 21-1 to 21-4 of the light-emitting chip 10. In Fig. 6, VCSEL1, VCSEL2, and VCSEL3 are lit, and VCSEL4 is not lit.

[0078] 6, time progresses in alphabetical order from time a to time k. VCSEL1 is controlled to be turned on or off in period T(1), VCSEL2 in period T(2), VCSEL3 in period T(3), and VCSEL4 in period T(4). Hereinafter, the control to turn on or off is referred to as "lighting control." Here, the periods T(1), T(2), T(3), . . . are all periods of the same length, and when there is no need to distinguish between them, they will be referred to as period T.

[0079] The first transfer signal φ1 transmitted to the φ1 terminal (see FIGS. 3 and 4(a)) and the second transfer signal φ2 transmitted to the φ2 terminal (see FIGS. 3 and 4(b)) are signals having two potentials: "H" (0 V) and "L" (-5 V). The waveforms of the first transfer signal φ1 and the second transfer signal φ2 are repeated every two consecutive periods T, such as periods T(1) and T(2). In the following, "H" (0V) and "L" (-5V) may be abbreviated as "H" and "L".

[0080] The first transfer signal φ1 transitions from “H” (0 V) to “L” (−5 V) at time b, which is the start time of period T(1), and transitions from “L” to “H” at time f. Then, at time i, which is the end time of period T(2), it transitions from “H” to “L.” The second transfer signal φ2 is “H” (0 V) at time b when the period T(1) starts, and transitions from “H” (0 V) to “L” (−5 V) at time e. Then, it transitions from “L” to “H” at time i when the period T(2) ends. Comparing the first transfer signal φ1 and the second transfer signal φ2, the second transfer signal φ2 corresponds to the first transfer signal φ1 shifted back by a period T on the time axis. Meanwhile, the waveform of the second transfer signal φ2 shown by the dashed line in period T(1) and the waveform in period T(2) are repeated from period T(3) onwards. The waveform of the second transfer signal φ2 in period T(1) is different from that in period T(3) and later because period T(1) is the period during which the light source device 1 starts operating.

[0081] As will be described later, a set of transfer signals, the first transfer signal φ1 and the second transfer signal φ2, propagates the on state of the transfer thyristors T in numerical order, thereby designating the VCSEL with the same number as the on-state transfer thyristor T as the target for lighting or non-lighting (lighting control).

[0082] Next, the light-up signal φI supplied to the φI terminal (see FIGS. 2 and 3) will be described. The light-up signal φI is a signal having two potentials: “H” (0 V) and “L” (−5 V). Here, the light-up signal φI will be described during a period T(1) of light-up control for the VCSEL 1. The light-up signal φI is “H” (0 V) at time b, the start of the period T(1), and transitions from “H” (0 V) to “L” (−5 V) at time c. It then transitions from “L” to “H” at time d, and remains at “H” at time e.

[0083] 2, the operations of the light source device 1 and the light-emitting chip 10 will be described according to the timing chart shown in Fig. 6. In the following, the periods T(1) and T(2) during which the lighting of VCSEL1 and VCSEL2 is controlled will be described.

[0084] (1) Time a At time a, the reference potential supply unit 160 of the control unit 12 of the light source device 1 sets the reference potential Vsub to "H" (0V). The power supply potential supply unit 170 of the control unit 12 sets the power supply potential Vga to "L" (-5V). The transfer signal generation unit 120 of the control unit 12 sets the first transfer signal φ1 and the second transfer signal φ2 to "H" (0V), respectively. As a result, the φ1 terminal and the φ2 terminal of the light-emitting chip 10 become "H". The potential of the first transfer signal line 72 connected to the φ1 terminal via the current-limiting resistor R1 also becomes "H", and the potential of the second transfer signal line 73 connected to the φ2 terminal via the current-limiting resistor R2 also becomes "H" (see FIG. 2).

[0085] Then, the lighting signal generating unit 140 of the control unit 12 sets the lighting signal φI to “H” (0 V). As a result, the φI terminal of the light-emitting chip 10 becomes “H” via the current limiting resistor RI, and the lighting signal line 75 connected to the φI terminal also becomes “H” (0 V).

[0086] The p-anode layer 85, which is the anode of the setting thyristor S, is connected to the n-cathode (DBR) layer 83, which is the cathode of the VCSEL, via a tunnel junction layer 84, and the p-anode (DBR) layer 81, which is the anode of the VCSEL, is connected to the Vsub terminal set to "H". The p-anode layer 85, which is the anode of the transfer thyristor T, is connected to the n-cathode (DBR) layer 83, which is the cathode of the lower diode UD, via the tunnel junction layer 84, and the p-anode (DBR) layer 81, which is the anode of the lower diode UD, is connected to the Vsub terminal set to “H”.

[0087] The cathodes of the odd-numbered transfer thyristors T1, T3, T5, T7, T9, and T11 are connected to the first transfer signal line 72 and are set to "H" (0 V). The cathodes of the even-numbered transfer thyristors T2, T4, T6, T8, T10, and T12 are connected to the second transfer signal line 73 and are set to "H." Therefore, the anode and cathode of the transfer thyristor T are both "H," and the transfer thyristor T is in the off state. In addition, the anode and cathode of the lower diode UD are both "H," and the lower diode UD is also in the off state.

[0088] The cathode terminal of the setting thyristor S is connected to the "H" (0V) light-up signal line 75. Therefore, the anode and cathode of the setting thyristor S are both "H" and in the off state. The anode and cathode of the VCSEL are also both "H" and in the off state.

[0089] As described above, the gate Gt1 is connected to the cathode of the start diode SD. The gate Gt1 is connected to the power supply line 71 at a power supply potential Vga (“L” (−5V)) via the power supply line resistor Rg1. The anode terminal of the start diode SD is connected to the second transfer signal line 73 and to the φ2 terminal at “H” (0V) via the current limiting resistor R2. Therefore, the start diode SD is forward biased, and the cathode (gate Gt1) of the start diode SD becomes −1.5V, which is the value obtained by subtracting the forward potential Vd (1.5V) of the pn junction from the potential (“H” (0V)) of the anode of the start diode SD. Furthermore, when the gate Gt1 becomes −1.5V, the coupling diode D1 becomes forward biased because its anode (gate Gt1) is −1.5V and its cathode is connected to the power supply line 71 (“L” (−5V)) via the power supply line resistor Rg2. Therefore, the potential of gate Gt2 becomes -3V, which is the potential of gate Gt1 (-1.5V) minus the forward potential Vd (1.5V) of the pn junction. Furthermore, the coupling diode D2 is forward biased because its anode (gate Gt1) is -3V and its cathode is connected to the power supply line 71 ("L" (-5V)) via the power supply line resistor Rg2. Therefore, the potential of gate Gt3 becomes -4.5V, which is the potential of gate Gt2 (-3V) minus the forward potential Vd (1.5V) of the pn junction. However, the gates Gt numbered 4 and above are not affected by the anode of the start diode SD being "H" (0V), and the potential of these gates Gt becomes "L" (-5V), which is the potential of the power supply line 71.

[0090] Note that, since the gate Gt is the gate Gs, the potential of the gate Gs is the same as the potential of the gate Gt. Therefore, the threshold voltages of the transfer thyristor T and the setting thyristor S are the potentials of the gates Gt and Gs minus the forward potential Vd (1.5 V) of the pn junction. That is, the threshold voltages of the transfer thyristor T1 and the setting thyristor S1 are −3 V, the threshold voltages of the transfer thyristor T2 and the setting thyristor S2 are −4.5 V, the threshold voltages of the transfer thyristor T3 and the setting thyristor S3 are −6 V, and the threshold voltages of the transfer thyristors T and the setting thyristors S whose numbers are 4 or more are −6.5 V.

[0091] (2) Time b 6, the first transfer signal φ1 transitions from “H” (0 V) to “L” (−5 V), causing the light source device 1 to start operating. When the first transfer signal φ1 transitions from “H” to “L,” the potential of the first transfer signal line 72 transitions from “H” (0 V) to “L” (−5 V) via the φ1 terminal and the current limiting resistor R1. Then, the voltage applied to the transfer thyristor T1 is −3.3 V, and the transfer thyristor T1, whose threshold voltage is −3 V, turns on. At this time, a current flows through the lower diode UD1, causing the transfer thyristor T1 to transition from an OFF state to an ON state. When the transfer thyristor T1 turns on, the potential of the first transfer signal line 72 becomes a potential close to −3.2 V (a negative potential with an absolute value greater than 3.2 V) obtained by subtracting the forward potential Vd (1.5 V) of the pn junction from the anode potential of the transfer thyristor T1 (−1.7 V, which is the potential applied to the lower diode UD1). The threshold voltage of the transfer thyristor T3 is −6 V, and the threshold voltages of the transfer thyristors T5, T7, T9, and T11 are −6.5 V. The voltage applied to the transfer thyristors T3, T5, T7, T9, and T11 is −1.5 V, which is obtained by adding the voltage of 1.7 V applied to the VCSEL to −3.2 V, and therefore the transfer thyristors T3 and T5 do not turn on. On the other hand, the even-numbered transfer thyristors T cannot be turned on because the second transfer signal φ2 is “H” (0V) and the second transfer signal line 73 is “H” (0V).

[0092] When the transfer thyristor T1 is turned on, the potential of the gates Gt1 / Gs1 becomes "H" (0V), which is the potential of the anode of the transfer thyristor T1. Then, the potential of the gate Gt2 (gate Gs2) becomes -1.5V, the potential of the gate Gt3 (gate Gs3) becomes -3V, the potential of the gate Gt4 (gate Gs4) becomes -4.5V, and the potential of the gates Gt (gate Gl) numbered 5 or greater becomes "L". As a result, the threshold voltage of the setting thyristor S1 becomes −1.5V, the threshold voltage of the transfer thyristor T2 and the setting thyristor S2 becomes −3V, the threshold voltage of the transfer thyristor T3 and the setting thyristor S3 becomes −4.5V, the threshold voltage of the transfer thyristor T4 and the setting thyristor S4 becomes −6V, and the threshold voltage of the transfer thyristors T5 to T12 and the setting thyristors S5 to S12 becomes −6.5V. However, because the first transfer signal line 72 is at −1.5 V due to the transfer thyristor T1 in the ON state, the odd-numbered transfer thyristors T in the OFF state do not turn on. Because the second transfer signal line 73 is “H” (0 V), the even-numbered transfer thyristors T do not turn on. Because the light-on signal line 75 is “H” (0 V), none of the VCSELs light up.

[0093] Immediately after time b, the transfer thyristor T1 and the lower diode UD1 are in the ON state, and the other transfer thyristors T, the lower diode UD, the setting thyristor S, and VDSEL are in the OFF state. Here, "immediately after time b" refers to the time when a steady state is reached after a change in the thyristors etc. occurs due to a change in the signal potential at time b.

[0094] (3) Time c At time c, the light-up signal φI transitions from “H” (0 V) to “L” (−5 V). When the light-up signal φI transitions from "H" to "L," the light-up signal line 75 transitions from "H" (0 V) to "L" (-5 V) via the current-limiting resistor RI and the φI terminal. Then, -3.3 V, which is obtained by adding the 1.7 V voltage applied to the VCSEL, is applied to the setting thyristor S1, and the setting thyristor S1, which has a threshold voltage of -1.5 V, turns on and lights up the VCSEL. This causes the potential of the light-up signal line 75 to become close to -3.2 V. Note that although the threshold voltage of the setting thyristor S2 is -3 V, the voltage applied to the setting thyristor S2 is -1.5 V, which is obtained by adding the 1.7 V voltage applied to the VCSEL to -3.2 V, so the setting thyristor S2 does not turn on. Immediately after time c, the transfer thyristor T1, the lower diode UD1, and the setting thyristor S1 are in the ON state, and the VCSEL1 is lit.

[0095] (4) Time d At time d, the light-up signal φI transitions from “L” (−5V) to “H” (0V). When the light-up signal φI transitions from "L" to "H," the potential of the light-up signal line 75 transitions from -3.2 V to "H" (0 V) via the current limiting resistor RI and the φI terminal. Then, the cathode of the setting thyristor S1 and the anode of VCSEL1 both become "H," turning off the setting thyristor S1 and turning off VCSEL1. The light-up period of VCSEL1 is the period during which the light-up signal φI is "L," from time c when the light-up signal φI transitions from "H" to "L" to time d when the light-up signal φI transitions from "L" to "H." Immediately after time d, the transfer thyristor T1 is in the ON state.

[0096] (5) Time e At time e, the second transfer signal φ2 transitions from “H” (0 V) to “L” (−5 V). At this point, the period T(1) during which VCSEL1 is controlled to be lit ends, and the period T(2) during which VCSEL2 is controlled to be lit begins. When the second transfer signal φ2 transitions from "H" to "L," the potential of the second transfer signal line 73 transitions from "H" to "L" via the φ2 terminal. As described above, the transfer thyristor T2 turns on because its threshold voltage is −3 V. At this time, a current also flows through the lower diode UD2, transitioning it from an off state to an on state. As a result, the potential of gate Gt2 (gate Gs2) becomes "H" (0V), the potential of gate Gt3 (gate Gs3) becomes -1.5V, the potential of gate Gt4 (gate Gs4) becomes -3V, the potential of gate Gt5 (gate Gs5) becomes -4.5V, and the potentials of gate Gt6 (gate Gs6) to gate Gt12 (gate Gs12) become -5V. Immediately after time e, the transfer thyristors T1 and T2 and the lower diodes UD1 and UD2 are in the ON state.

[0097] (6) Time f At time f, the first transfer signal φ1 transitions from “L” (−5 V) to “H” (0 V). When the first transfer signal φ1 transitions from "L" to "H," the potential of the first transfer signal line 72 transitions from "L" to "H" via the φ1 terminal. Then, the anode and cathode of the transfer thyristor T1, which is in the ON state, both become "H," and the transfer thyristor T1 is turned off. At this time, the anode and cathode of the lower diode UD1 also both become "H," and the lower diode UD1 transitions from the ON state to the OFF state. Then, the potential of the gate Gt1 (gate Gs1) changes toward the power supply potential Vga (“L” (−5 V)) of the power supply line 71 via the power supply line resistance Rg1. As a result, the coupling diode D1 is in a state in which a potential is applied in a direction in which no current flows (reverse bias). Therefore, the influence of the gate Gt2 (gate Gs2) being “H” (0 V) no longer extends to the gate Gt1 (gate Gs1). In other words, the threshold voltage of the transfer thyristor T having the gate Gt connected by the reverse-biased coupling diode D becomes −6.5 V, and the transfer thyristor T will not turn on even if the first transfer signal φ1 or the second transfer signal φ2 becomes “L” (−5 V). Immediately after time f, the transfer thyristor T2 and the lower diode UD2 are in the ON state.

[0098] (7) Other At time g, when the lighting signal φI transitions from “H” (0 V) to “L” (−5 V), the setting thyristor S2 turns on, and VCSEL2 lights up (emits light), similar to VCSEL1 and setting thyristor S1 at time c. Then, at time h, when the light-up signal φI transitions from “L” (−5 V) to “H” (0 V), the setting thyristor S2 turns off, and VCSEL2 goes out, similar to VCSEL1 and setting thyristor S1 at time d. Furthermore, at time i, when the first transfer signal φ1 transitions from “H” (0 V) to “L” (−5 V), the transfer thyristor T3, whose threshold voltage is −3 V, is turned on, similar to the transfer thyristor T1 at time b or the transfer thyristor T2 at time e. At time i, the period T(2) during which the lighting of VCSEL2 is controlled ends, and the period T(3) during which the lighting of VCSEL3 is controlled begins. What follows is a repetition of what has been explained so far.

[0099] When the VCSEL is to remain extinguished (non-illuminated) without being lit (emitting light), the light-up signal φI can be kept at “H” (0 V), as shown by the light-up signal φI from time j to time k in the period T(4) during which the VCSEL4 is controlled to be lit in Fig. 6. In this way, even if the threshold voltage of the setting thyristor S4 is -1.5 V, the setting thyristor S4 will not turn on, and the VCSEL will remain extinguished (non-illuminated).

[0100] As described above, the gate terminals Gt of the transfer thyristors T are connected to each other by the coupling diode D. Therefore, when the potential of the gate Gt changes, the potential of the gate Gs connected to the gate Gt whose potential has changed via the forward-biased coupling diode D also changes. Then, the threshold voltage of the transfer thyristor T having the gate whose potential has changed changes. If the threshold voltage is higher than −3.3 V, the transfer thyristor T turns on at the timing when the first transfer signal φ1 or the second transfer signal φ2 transitions from “H” (0 V) to “L” (−5 V). The setting thyristor S, whose gate Gs is connected to the gate Gt of the transfer thyristor T in the ON state, has a threshold voltage of −1.5 V, so when the lighting signal φI transitions from “H” (0 V) to “L” (−5 V), it turns on, causing the VCSEL connected in series to the setting thyristor S to light up (emit light).

[0101] That is, when the transfer thyristor T is turned on, it designates the VCSEL that is the target of lighting control, and the lighting signal φI of “L” (−5 V) turns on the setting thyristor S connected in series to the VCSEL that is the target of lighting control, and lights up the VCSEL. That is, in the light-emitting chip 10, the on state of the transfer thyristor T is transferred, and the VCSELs are sequentially lit up. The lighting signal φI at "H" (0V) maintains the setting thyristor S in the off state and also maintains the VCSEL in the non-lighting state. That is, the lighting signal φI sets the lighting / non-lighting of the VCSEL.

[0102] As described above, the light source device 1 of this embodiment has a plurality of elements (transfer thyristors T1 to T12, setting thyristors S1 to S12, VCSEL1 to VCSEL12, etc.), and among the plurality of elements, elements that are turned on are successively switched on. As a result, in the light source device 1 of this embodiment, the lighting control by the control unit 12 individually turns on the plurality of transfer thyristors T1 to T12 in the transfer unit 30 of the light-emitting chip 10. Then, when the transfer thyristors T1 to T12 are turned on, a VCSEL that is the target of lighting control is designated, and the setting thyristors S1 to S12 of the plurality of light-emitting sections 21-1 to 21-12 in the light-emitting unit 20 are individually turned on. Then, when each setting thyristor S is turned on, the VCSEL corresponding to that setting thyristor S is individually turned on. As a result, in the light source device 1 of this embodiment, the light emitting sections 21-1 to 21-12 of the light emitting section 20 can be made to emit light individually.

[0103] (3D sensor 5) The 3D sensor 5 has a light-receiving surface that extends in the x and y directions and has a plurality of light-receiving elements arranged on it. Although not shown, the light-receiving surface of the 3D sensor 5 is divided into a plurality of light-receiving sections corresponding to the areas irradiated with light from the light-emitting sections 21-1 to 21-12 of the light-emitting section 20 formed on the light-emitting chip 10. Specifically, the light-receiving surface of the 3D sensor 5 is divided into a total of 12 light-receiving sections, six in the x direction and two in the y direction. Each light-receiving section receives light emitted from light-emitting sections 21-1 to 21-12 and reflected by the object, and outputs an electrical signal according to the light-receiving result. The 3D sensor 5 calculates distance information relating to the distance to the object based on the electrical signal output from each light-receiving section, and outputs the information to the measurement control section 200 (see FIG. 1). Each light-receiving section is independently driven to perform light-receiving operation in response to the light-emitting operation of light-emitting sections 21-1 to 21-12.

[0104] (Effect of the Planar Shape of the Transfer Section 30) In the light-emitting chip 10 of this embodiment, the transfer units 30 are arranged in two separate locations on the substrate 80, as described above. Here, in a light-emitting chip 10 having a plurality of light-emitting sections 21, when the transfer unit 30 is provided at one location on the substrate 80, there may be many locations where the distance from the transfer unit 30 to the light-emitting sections 21 is long. For example, when the light-emitting section 20 has 12 light-emitting sections 21-1 to 21-12 as shown in FIG. 3, if the transfer unit 30 is provided at one location on the +y-direction side of the light-emitting section 20, the distance from the transfer unit 30 to the light-emitting sections 21-7 to 21-12 will be longer than the distance from the transfer unit 30 to the light-emitting sections 21-1 to 21-6. Furthermore, when the distance from the transfer section 30 to the light-emitting sections 21 becomes longer, the signal lines 41 connecting the transfer section 30 and each light-emitting section 21 tend to become longer.

[0105] In contrast, in the light-emitting chip 10 of this embodiment, the transfer section 30 includes a first transfer section 30A arranged on the +y-direction side of the light-emitting section 20 on the substrate 80, and a second transfer section 30B arranged on the -y-direction side of the light-emitting section 20. As a result, in the light-emitting chip 10 of this embodiment, the number of locations where the distance from the transfer section 30 to the light-emitting section 21 is long is reduced compared to when the transfer section 30 is provided in one location on the substrate 80.

[0106] The first transfer unit 30A is connected to the light emitting sections 21-1 to 21-6 of the group of light emitting sections 21A located on the +y-direction side of the light emitting section 20 on the substrate 80. The second transfer unit 30B is connected to the light emitting sections 21-7 to 21-12 of the group of light emitting sections 21B located on the −y-direction side of the light emitting section 20 on the substrate 80. As a result, in the light-emitting chip 10 of this embodiment, the signal line 41 connecting the transfer section 30 to each light-emitting section 21 is prevented from becoming longer than when the transfer section 30 is provided in one location on the substrate 80. Furthermore, it is not necessary to provide the signal lines 41 between the light-emitting sections 21 to connect the transfer unit 30 to the light-emitting sections 21. In this case, the structure of the light-emitting chip 10 and the manufacturing process of the light-emitting chip 10 can be simplified.

[0107] In the light-emitting unit 20 described above, two light-emitting sections 21 are arranged in the y direction, but the arrangement of the light-emitting sections 21 is not limited to this. Three or more light-emitting sections 21 may be arranged in the y direction in the light-emitting unit 20. Even when three or more light-emitting sections 21 are arranged in the y direction, as in the present embodiment, the light-emitting section 21 located on the +y-direction side of the multiple light-emitting sections 21 may be connected to the first transfer section 30A, and the light-emitting section 21 located on the −y-direction side may be connected to the second transfer section 30B. When an odd number of light-emitting sections 21 are arranged in the y direction and a light-emitting section 21 exists that is the same distance from the first transfer unit 30A as it is from the second transfer unit 30B, that light-emitting section 21 may be connected to either the first transfer unit 30A or the second transfer unit 30B. For example, the number of light-emitting sections 21 connected to the first transfer unit 30A may be approximately the same as the number of light-emitting sections 21 connected to the second transfer unit 30B.

[0108] Furthermore, in the light-emitting unit 20 described above, the light-emitting sections 21 belonging to the same light-emitting section groups 21A and 21B are arranged side by side, but this is not limited to this. The light-emitting sections 21 belonging to the same light-emitting section groups 21A and 21B may be arranged at separate positions on the substrate 80. For example, the light-emitting section 21 belonging to the light-emitting section group 21B may be arranged between the light-emitting sections 21 belonging to the light-emitting section group 21A.

[0109] In the above-described embodiment, the first transfer unit 30A and the second transfer unit 30B of the transfer unit 30 are connected. Then, common transfer signals φ1 and φ2 are supplied to the first transfer unit 30A and the second transfer unit 30B by the control unit 12, and the ON state is transferred sequentially to the transfer thyristors T1 to T6 of the first transfer unit 30A and the transfer thyristors T7 to T12 of the second transfer unit 30B. However, the first transfer unit 30A and the second transfer unit 30B of the transfer unit 30 arranged at separate positions on the substrate 80 may not be connected. In addition, transfer signals may be supplied individually to the first transfer unit 30A and the second transfer unit 30B, and the on state may be transferred individually to the transfer thyristors T1 to T6 of the first transfer unit 30A and the transfer thyristors T7 to T12 of the second transfer unit 30B. On the other hand, from the viewpoint of controlling the lighting / non-lighting of the light-emitting sections 21-1 to 21-6 of the group of light-emitting sections 21A connected to the first transfer unit 30A and the light-emitting sections 21-7 to 21-12 of the group of light-emitting sections 21B connected to the second transfer unit 30B in a coordinated manner, it is preferable that the first transfer unit 30A and the second transfer unit 30B are connected and that common transfer signals φ1 and φ2 are supplied to the first transfer unit 30A and the second transfer unit 30B. In this case, for example, the light-emitting sections 21-1 to 21-6 belonging to the group of light-emitting sections 21A and the light-emitting sections 21-7 to 21-12 belonging to the group of light-emitting sections 21B are prevented from unintentionally emitting light at the same time.

[0110] [Embodiment 2] Next, a second embodiment of the present invention will be described. (Light emitting chip 10) 7 is a diagram illustrating the planar shape of the light-emitting chip 10 to which the second embodiment is applied, and is a plan view of the light-emitting chip 10 as viewed from the light-emitting side. In FIG. 7, the right direction of the paper is the +x direction, the upward direction is the +y direction, and the front side of the paper is the +z direction, and the opposite directions are the -x, -y, and -z directions, respectively. In the second embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted here.

[0111] Similar to the first embodiment, the light-emitting chip 10 of the second embodiment includes a light-emitting unit 20, a transfer unit 30 (see FIG. 2), and a connection unit 40. The light-emitting chip 10 also includes a φ1 terminal, a φ2 terminal, a Vga terminal, a φI terminal, and a Vsub terminal.

[0112] The light-emitting unit 20 has a plurality of light-emitting sections 22, each including at least one VCSEL. The light-emitting unit 20 has a total of 12 light-emitting sections 22, six in the x direction and two in the y direction. Here, when distinguishing between the individual light-emitting sections 22, the 12 light-emitting sections 22 are referred to as light-emitting sections 22-1 to 22-12.

[0113] The light-emitting unit 20 has six light-emitting sections 22-1 to 22-6 arranged in this order from the -x direction to the +x direction. Hereinafter, these light-emitting sections 22-1 to 22-6 may be collectively referred to as light-emitting section group 22A. In this embodiment, the light-emitting sections 22-1 to 22-6 are an example of a first light-emitting section, and the light-emitting section group 22A is an example of a second light-emitting section group. Furthermore, the light-emitting unit 20 has six light-emitting sections 22-7 to 22-12 arranged in this order from the +x direction to the -x direction. Hereinafter, these light-emitting sections 22-7 to 22-12 may be collectively referred to as light-emitting section group 22B. In this embodiment, the light-emitting sections 22-7 to 22-12 are an example of second light-emitting sections, and the light-emitting section group 22B is an example of a second light-emitting section group.

[0114] The light emitting zone group 22A and the light emitting zone group 22B are arranged side by side in this order from the +y direction side to the -y direction side. In addition, the light emitting zones 22-1, 22-2, 22-3, 22-4, 22-5, and 22-6 belonging to the light emitting zone group 22A are arranged side by side in the +y direction with the light emitting zones 22-12, 22-11, 22-10, 22-9, 22-8, and 22-7 belonging to the light emitting zone group 22B, respectively.

[0115] Similarly to the first embodiment, the light-emitting unit 20 also includes 12 setting thyristors S1 to S12. Each setting thyristor S is connected in series with the VCSEL of the light-emitting section 22 having the same number. In addition, each setting thyristor S1 to S12 is stacked on the VCSEL1 to VCSEL12 of each of the light-emitting sections 22-1 to 22-12 having the same number. That is, each light-emitting section 22 includes a setting thyristor S and a VCSEL.

[0116] In the light emitting section 20 of the second embodiment, the planar shape of the light emitting sections 22-1 to 22-6 belonging to the light emitting section group 22A is different from the planar shape of the light emitting sections 22-7 to 22-12 belonging to the light emitting section group 22B. Specifically, in the light-emitting unit 20 of the embodiment, the area of the light-emitting sections 22-1 to 22-6 belonging to the group of light-emitting sections 22A viewed from the +z direction is smaller than the area of the light-emitting sections 22-7 to 22-12 belonging to the group of light-emitting sections 22B viewed from the +z direction. Furthermore, when the same amount of power is supplied to the light-emitting sections 22-1 to 22-12 of the light-emitting unit 20, the amount of light emitted from the light-emitting sections 22-1 to 22-6 belonging to the group of light-emitting sections 22A is smaller than the amount of light emitted from the light-emitting sections 22-7 to 22-12 belonging to the group of light-emitting sections 22B.

[0117] The transfer section 30 is also driven to transfer the ON state in sequence, switching each of the light-emitting sections 22-1 to 22-12 of the light-emitting section 20 between a light-emitting state and a non-light-emitting state. As in the first embodiment, the transfer unit 30 includes transfer thyristors T1 to T12, lower diodes UD1 to UD12, coupling diodes D1 to D11, power line resistors Rg1 to Rg12, a start diode SD, and current limiting resistors R1 and R2 provided on a substrate 80.

[0118] In the light-emitting chip 10 of embodiment 2, as in embodiment 1, a first transfer unit 30A consisting of the transfer thyristors T1 to T6, lower diodes UD1 to UD6, coupling diodes D1 to D6, power line resistances Rg1 to Rg6, start diode SD, and current limiting resistance R1 of the transfer unit 30, and a second transfer unit 30B consisting of the transfer thyristors T7 to T12, lower diodes UD7 to UD12, coupling diodes D7 to D11, power line resistances Rg7 to Rg12, and current limiting resistance R2 are arranged separately at positions facing each other across the light-emitting unit 20.

[0119] (Optical system 11) 8 and 9 are diagrams illustrating the relationship between the light-emitting chip 10 and the optical system 11 of this embodiment. In Fig. 8, the left direction of the paper is the +x direction, the front side of the paper is the +y direction, and the upward direction of the paper is the +z direction, with the opposite directions being the -x, -y, and -z directions. In Fig. 9, the front side of the paper is the +x direction, the right direction is the +y direction, and the upward direction is the +z direction, with the opposite directions being the -x, -y, and -z directions.

[0120] 8 and 9, the illumination ranges of the light emitted from the light-emitting sections 22-1 to 22-12 (see FIG. 7) are respectively indicated by the reference numerals 501 to 512. Below, the illumination ranges of the light emitted from the light-emitting sections 22-1 to 22-12 may be referred to as illumination ranges 501 to 512, respectively. 8, the illumination ranges 501 / 512 mean that the illumination range 501 and the illumination range 512 overlap when viewed from the +y direction. The same applies to the illumination ranges 502 to 511. Furthermore, in FIG. 9, the illumination ranges 501 to 506 mean that the illumination ranges 501, 502, 503, 504, 505, and 506 overlap when viewed from the +x direction. The same applies to the illumination ranges 507 to 512.

[0121] 8 and 9 show an illumination surface 500 that is perpendicular to the +z direction and illuminated by light from illumination ranges 501 to 512 at a certain distance in the +z direction, which is the direction in which the light-emitting unit 20 of the light-emitting chip 10 emits light. The illumination surface 500 extends in the x and y directions at a certain distance in the +z direction.

[0122] 8 and 9, the optical system 11 is disposed on the +z direction side of the light-emitting chip 10. The optical system 11 expands the irradiation range of the light emitted from each light-emitting section 22 (see FIG. 7) of the light-emitting unit 20 in the light-emitting chip 10 in the +z direction. The optical system 11 expands the illumination range of light emitted from each light-emitting section 22 of the light-emitting unit 20 to different degrees in the x and y directions. Note that, hereinafter, the degree to which the optical system 11 expands the illumination range of light is referred to as the degree of diffusion of light by the optical system 11. In this embodiment, the optical system 11 is configured so that the degree of diffusion of light emitted from each light-emitting section 22 of the light-emitting unit 20 in the x direction is greater than the degree of diffusion in the y direction.

[0123] In addition, it is preferable that the optical system 11 diffuses the light from each light-emitting section 22 so that the light irradiation range of one light-emitting section 22 belonging to the light-emitting section group 22A and the light irradiation range of another light-emitting section 22 belonging to the light-emitting section group 22B and aligned in the -y direction relative to the one light-emitting section 22 overlap on the irradiation surface 500. The overlap between the light irradiation range of one light-emitting section 22 belonging to light-emitting section group 22A and the light irradiation range of another light-emitting section 22 belonging to light-emitting section group 22B that is aligned in the -y direction relative to the one light-emitting section 22 makes it possible for the one light-emitting section 22 and the other light-emitting section 22 to irradiate light onto the same area on the irradiation surface 500. In this case, depending on the size of an object present on the irradiation surface 500, the one light-emitting section 22 and the other light-emitting section 22 may be able to irradiate light onto the same object.

[0124] In addition, it is preferable that the optical system 11 diffuses the light from each light-emitting section 22 so that the overlap between the light irradiation range of one light-emitting section 22 belonging to the light-emitting section group 22A and the light irradiation range of another light-emitting section 22 belonging to the light-emitting section group 22B and arranged in the -y direction relative to the one light-emitting section 22 is greater than the overlap between the light irradiation ranges of the light-emitting sections 22 arranged in the x direction in the light-emitting section group 22A and the overlap between the light irradiation ranges of the light-emitting sections 22 arranged in the x direction in the light-emitting section group 22B.

[0125] In this case, it is preferable that the optical system 11 does not optically act on the light emitted from each light-emitting section 22 of the light-emitting unit 20 in the y direction but optically acts on the light in the x direction. In this embodiment, for example, if light emitting section 22-1 of light emitting section group 22A is one light emitting section 22, light emitting section 22-12 aligned in the -y direction relative to light emitting section 22-1 corresponds to another light emitting section 22 of light emitting section group 22B. In the following description, other light emitting sections 22 that belong to the light emitting section group 22B and are aligned in the −y direction with respect to one light emitting section 22 may be referred to as other light emitting sections 22 that belong to the light emitting section group 22B.

[0126] Here, when the optical system 11 does not act optically in the y direction, the light from each light-emitting section 22 spreads according to its original diffusion properties, and at an irradiation surface 500 100 mm away from the optical system 11 in the +z direction, the overlap between the illuminance distribution in the y direction of the light emitted from one light-emitting section 22 belonging to the light-emitting section group 22A and the illuminance distribution in the y direction of the light emitted from another light-emitting section 22 belonging to the light-emitting section group 22B is 80% or more.

[0127] FIG. 10 is a diagram showing an example of the illuminance distribution of one light emitting section 22 belonging to the light emitting section group 22A and the illuminance distribution of another light emitting section 22 belonging to the light emitting section group 22B. In FIG. 10, the horizontal axis represents the position in the y direction on the irradiation surface 500, and the vertical axis represents the normalized illuminance (normalized illuminance).

[0128] The illuminance distribution of one light-emitting section 22 belonging to the light-emitting section group 22A and the illuminance distribution of the other light-emitting section 22 belonging to the light-emitting section group 22B are normalized so that the peak intensity, where the illuminance is the maximum value, is 1. In addition, in the illuminance distribution of one light-emitting section 22 belonging to the light-emitting section group 22A and the illuminance distribution of the other light-emitting section 22 belonging to the light-emitting section group 22B, the illuminance is 1 / e 2 The width in the y direction of the region where the illuminance is equal to or greater than 1 / e of the peak intensity in the illuminance distribution of one light-emitting section 22 belonging to the light-emitting section group 22A is defined as the illumination width W1. 2 or more, and the illuminance distribution of the other light emitting sections 22 belonging to the light emitting section group 22B is 1 / e 2 The width in the y direction of the area where the above-mentioned areas overlap is defined as an overlap width W2. In this case, the overlap between the illuminance distribution of one light emitting section 22 in the light emitting section group 22A and the illuminance distribution of another light emitting section 22 in the light emitting section group 22B is obtained by the following formula (1). (Overlap width W2 / Irradiation width W1) x 100 (%) ... (1)

[0129] The optical system 11 used in this embodiment may be, for example, a single optical element that collectively diffuses the light emitted from multiple light-emitting sections 22 of the light-emitting unit 20, or may be multiple optical elements that are individually provided for each light-emitting section 22 and diffuse the light emitted from each individual light-emitting section 22.

[0130] Fig. 11 is a diagram showing an example of an irradiation surface 500 onto which light emitted from light-emitting sections 22-1 to 22-12 of light-emitting unit 20 is irradiated. In Fig. 11, the left direction of the paper is the +x direction, the upward direction is the +y direction, and the back side of the paper is the +z direction, and the opposite directions are the -x, -y, and -z directions, respectively. On the irradiation surface 500, the light emitted from the light-emitting sections 22-1 to 22-12 of the light-emitting unit 20 is diffused by the optical system 11 described above, so that the light irradiation range of one light-emitting section 22 belonging to the light-emitting section group 22A overlaps with the light irradiation range of another light-emitting section 22 belonging to the light-emitting section group 22B.

[0131] Specifically, on the irradiated surface 500, an area 501 illuminated by light from the light-emitting section 22-1 overlaps with an area 512 illuminated by light from the light-emitting section 22-12 aligned in the -y direction relative to the light-emitting section 22-1. Similarly, on the irradiated surface 500, an area 502 illuminated by light from the light-emitting section 22-2 overlaps with an area 511 illuminated by light from the light-emitting section 22-11 aligned in the -y direction relative to the light-emitting section 22-2. Also, on the irradiated surface 500, an area 503 illuminated by light from the light-emitting section 22-3 overlaps with an area 510 illuminated by light from the light-emitting section 22-10 aligned in the -y direction relative to the light-emitting section 22-3. Also, on the irradiated surface 500, an area 504 illuminated by light from the light-emitting section 22-4 overlaps with an area 509 illuminated by light from the light-emitting section 22-9 aligned in the -y direction relative to the light-emitting section 22-4. Furthermore, on the illuminated surface 500, an illumination range 505 of light from light-emitting section 22-5 overlaps with an illumination range 508 of light from light-emitting section 22-8 aligned in the -y direction relative to light-emitting section 22-5. Also, on the illuminated surface 500, an illumination range 506 of light from light-emitting section 22-6 overlaps with an illumination range 507 of light from light-emitting section 22-7 aligned in the -y direction relative to light-emitting section 22-6.

[0132] As a result, the illumination surface 500 is divided into six illumination sections P1 to P6 arranged in the -x direction to the +x direction. The illumination section P1 is an area illuminated by light from the light-emitting section 22-1 and light from the light-emitting section 22-12. The illumination section P2 is an area illuminated by light from the light-emitting section 22-2 and light from the light-emitting section 22-11. The illumination section P3 is an area illuminated by light from the light-emitting section 22-3 and light from the light-emitting section 22-10. The illumination section P4 is an area illuminated by light from the light-emitting section 22-4 and light from the light-emitting section 22-9. The illumination section P5 is an area illuminated by light from the light-emitting section 22-5 and light from the light-emitting section 22-8. The illumination section P6 is an area illuminated by light from the light-emitting section 22-6 and light from the light-emitting section 22-7.

[0133] (3D sensor 5) The 3D sensor 5 (see FIG. 1) used in the second embodiment has a light receiving surface that extends in the x and y directions and has a plurality of light receiving elements arranged thereon, similar to the first embodiment. Although not shown, the light receiving surface of the 3D sensor 5 is divided into a plurality of light receiving sections corresponding to the irradiation sections P1 to P6 of the irradiation surface 500. Specifically, the light receiving surface of the 3D sensor 5 is divided into six light receiving sections aligned in the x direction. Each light-receiving section receives light emitted from light-emitting sections 22-1 to 22-12 and reflected by the object in irradiation sections P1 to P6. Each light-receiving section is independently driven to perform a light-receiving operation in response to the light-emitting operation of light-emitting sections 22-1 to 22-12.

[0134] (Operation of the light-emitting chip 10) Next, the operation of the light-emitting chip 10 will be described. The light source device 1 (see FIG. 1) to which the second embodiment is applied has a plurality of elements (transfer thyristors T1 to T12, setting thyristors S1 to S12, VCSEL1 to VCSEL12, etc.) as in the first embodiment, and the elements that are turned on among the plurality of elements are successively switched on. As a result, in the light source device 1, the control unit 12 controls the lighting of the plurality of transfer thyristors T1 to T12 in the transfer unit 30 of the light-emitting chip 10 to be individually turned on. Then, when the transfer thyristors T1 to T12 are turned on, a VCSEL that is the target of lighting control is designated, and the setting thyristors S1 to S12 of the plurality of light-emitting sections 22-1 to 22-12 in the light-emitting unit 20 are individually turned on. Then, when each setting thyristor S is turned on, the VCSEL corresponding to that setting thyristor S is individually turned on. As a result, in the light source device 1 of this embodiment, the light emitting sections 22-1 to 22-12 of the light emitting section 20 can be made to emit light individually.

[0135] In the light source device 1 of this embodiment, the control unit 12 controls the lighting of the light-emitting unit 20 so that one of the one light-emitting section 22 belonging to the light-emitting section group 22A that irradiates light to each of the irradiation sections P1 to P6 of the irradiation surface 500 and the other light-emitting section 22 that belongs to the light-emitting section group 22B and is aligned in the −y direction with respect to the one light-emitting section 22 is in a lit state and the other is in an extinguished state. In addition, during the period when the transfer thyristor T1 of the transfer unit 30 transitions from the on state to the transfer thyristor T12, the light source device 1 controls the lighting of the light-emitting unit 20 so that one of the one light-emitting section 22 belonging to the light-emitting section group 22A that irradiates light to each of the irradiation sections P1 to P6 and the other light-emitting section 22 that belongs to the light-emitting section group 22B is in a lit state and the other is in an extinguished state. For example, the control unit 12 controls the lighting so that one of the light-emitting section 22-1 belonging to the light-emitting section group 22A that irradiates light onto the irradiation section P1 of the irradiation surface 500 and the light-emitting section 22-12 belonging to the light-emitting section group 22B that is aligned in the -y direction relative to the light-emitting section 22-1 is in a lit state and the other is in an unlit state.

[0136] When the light-emitting section 22 is turned on, the temperature of the light-emitting section 22 rises due to heat generated by the VCSEL light emission. The rise in temperature of the light-emitting section 22 may have an effect such as a decrease in the optical output of the VCSEL. The rise in temperature of the light-emitting section 22 due to heat generated by the VCSEL may affect not only the light-emitting section 22 that is turned on, but also the light-emitting section 22 adjacent to the light-emitting section 22 that is turned on. When the lighting of the light-emitting unit 20 is controlled so that both one light-emitting section 22 belonging to the light-emitting section group 22A and another light-emitting section 22 belonging to the light-emitting section group 22B and aligned in the -y direction relative to the one light-emitting section 22 are turned on, a temperature rise occurs in the one light-emitting section 22 and the other light-emitting section 22, making it more likely that effects such as a decrease in the light output of the VCSEL will occur. In contrast, in this embodiment, the effects of temperature rise in the light-emitting sections 22 can be suppressed by controlling the lighting of one light-emitting section 22 belonging to light-emitting section group 22A and another light-emitting section 22 belonging to light-emitting section group 22B so that one is lit and the other is off.

[0137] As described above, the amount of light emitted from the light emitting sections 22-1 to 22-6 belonging to the light emitting section group 22A is smaller than the amount of light emitted from the light emitting sections 22-7 to 22-12 belonging to the light emitting section group 22B. In this embodiment, for each of the illumination sections P1 to P6, either one of the light-emitting section 22 belonging to the light-emitting section group 22A or the other light-emitting section 22 belonging to the light-emitting section group 22B is turned on and the other is turned off, thereby making it possible to select the amount of light irradiated onto each of the illumination sections P1 to P6. In addition, when one light-emitting section 22 belonging to the light-emitting section group 22A is turned on and the other light-emitting section 22 belonging to the light-emitting section group 22B is turned off, the amount of light irradiated onto the corresponding illumination section P1 to P6 is smaller than when one light-emitting section 22 belonging to the light-emitting section group 22A is turned off and the other light-emitting section 22 belonging to the light-emitting section group 22B is turned on.

[0138] The control unit 12 can determine whether to turn on one light-emitting section 22 belonging to the light-emitting section group 22A or another light-emitting section 22 belonging to the light-emitting section group 22B, for example, based on the distance from the light source device 1 to the object in each of the irradiation sections P1 to P6. When the distance from the light source device 1 to the object is short, if the amount of light irradiated onto the object is large, the amount of light reflected from the object and incident on the corresponding light-receiving section of the 3D sensor 5 is likely to increase. In this case, signal saturation occurs in the light-receiving section, and the distance to the object may not be measured accurately.

[0139] The control unit 12 acquires distance information from the light source device 1 to the object in each of the irradiation sections P1 to P6 calculated from the light reception results by the 3D sensor 5. Then, the control unit 12 determines whether the distance from the light source device 1 to the object in each of the irradiation sections P1 to P6 is closer than a predetermined distance. Then, for illumination sections P1 to P6 where the distance from the light source device 1 to the object is closer than a predetermined distance, the control section 12 turns on one light-emitting section 22 belonging to the group of light-emitting sections 22A and turns off the other light-emitting sections 22 belonging to the group of light-emitting sections 22B. Also, for illumination sections P1 to P6 where the distance from the light source device 1 to the object is equal to or greater than a predetermined distance, the control section 12 turns off one light-emitting section 22 belonging to the group of light-emitting sections 22A and turns on the other light-emitting sections 22 belonging to the group of light-emitting sections 22B. This makes it less likely that signal saturation will occur in the light receiving section of the 3D sensor 5.

[0140] In addition, the control unit 12 may determine whether to turn on one light-emitting section 22 belonging to the light-emitting section group 22A or another light-emitting section 22 belonging to the light-emitting section group 22B, for example, based on the amount of light received by the light-receiving section in the 3D sensor 5. In addition, when the amount of light received in a light-receiving section exceeds a predetermined threshold, the control unit 12 turns on one light-emitting section 22 belonging to the group of light-emitting sections 22A and turns off the other light-emitting sections 22 belonging to the group of light-emitting sections 22B for the illumination sections P1 to P6 corresponding to this light-receiving section. Also, when the amount of light received in a light-receiving section is equal to or less than the predetermined threshold, the control unit 12 turns off one light-emitting section 22 belonging to the group of light-emitting sections 22A and turns on the other light-emitting sections 22 belonging to the group of light-emitting sections 22B for the illumination sections P1 to P6 corresponding to this light-receiving section. The threshold for the amount of received light can be, for example, the amount of received light at which signal saturation occurs in the light-receiving section. This makes it less likely that signal saturation will occur in the light receiving section of the 3D sensor 5.

[0141] In the above-described embodiment, the light-emitting sections 22 belonging to the light-emitting section group 22A and the light-emitting sections 22 belonging to the light-emitting section group 22B emit different amounts of light, but this is not limiting. The light-emitting sections 22 belonging to the light-emitting section group 22A and the light-emitting sections 22 belonging to the light-emitting section group 22B may emit the same amount of light. Even in such a case, the effects of temperature rise in the light-emitting sections 22 can be suppressed by controlling the lighting of one light-emitting section 22 belonging to light-emitting section group 22A and another light-emitting section 22 belonging to light-emitting section group 22B so that one is lit and the other is off.

[0142] When the amount of light emitted by a light-emitting section 22 belonging to light-emitting section group 22A is equal to the amount of light emitted by a light-emitting section 22 belonging to light-emitting section group 22B, the control unit 12 can select whether to turn on one light-emitting section 22 belonging to light-emitting section group 22A or the other light-emitting section 22 belonging to light-emitting section group 22B so as to reduce the impact of temperature rise in the light-emitting section 22. For example, consider a case where, of light-emitting section 22-1 and light-emitting section 22-12 that irradiate light to illumination section P1, light-emitting section 22-1 is turned on and light-emitting section 22-12 is turned off. In this case, of light-emitting section 22-2 and light-emitting section 22-11 that irradiate light to illumination section P2 adjacent to illumination section P1, control unit 12 turns off light-emitting section 22-2, which is aligned in the +x direction with respect to light-emitting section 22-1 and is therefore more susceptible to a temperature rise due to light-emitting section 22-1 being turned on, and turns on light-emitting section 22-11, which is less susceptible to a temperature rise due to light-emitting section 22-1 being turned on.

[0143] Although the embodiments of the present invention have been described above, the technical scope of the present invention is not limited to the above-described embodiments. Various modifications and alternative arrangements that do not depart from the scope of the technical concept of the present invention are encompassed by the present invention.

[0144] (Addendum) (((1))) A substrate; a light-emitting section provided on the substrate and having a plurality of light-emitting sections; a first switching unit provided on the substrate and configured to switch a first light-emitting section of the light-emitting unit between a light-emitting state and a non-light-emitting state; a second switching unit that is provided on the substrate on the opposite side of the light-emitting unit from the first switching unit and that switches a second light-emitting section different from the first light-emitting section of the light-emitting unit between a light-emitting state and a non-light-emitting state; A light emitting device comprising: (((2))) The first switching unit and the second switching unit are connected by wiring, and the first light-emitting section and the second light-emitting section of the light-emitting unit are switched between a light-emitting state and a non-light-emitting state in sequence by a signal transmitted by the wiring. (((1))) (((3))) the substrate is rectangular and has two opposing first sides and two opposing second sides connecting the first sides, The first switching portion is provided along one of the first sides, the second switching portion is provided along the other of the first sides, and the wiring is provided along one of the second sides. The light-emitting device according to (((2))). (((4))) The light emitting device according to (((3))) further comprises a terminal provided along the other of the second side of the substrate, for receiving a supply of power to the light emitting portion. (((5))) A light emitting device according to any one of (((2))) to (((4))), wherein the electrical resistance between the first switching section and the first light emitting section, and the electrical resistance between the second switching section and the second light emitting section are greater than the electrical resistance of the wiring. (((6))) The light-emitting unit is two-dimensionally arranged with the plurality of light-emitting sections aligned in a first direction and a second direction intersecting the first direction, and the number of the light-emitting sections aligned in the first direction is greater than the number of the light-emitting sections aligned in the second direction; The first switching portion and the second switching portion are arranged along the first direction. The light emitting device according to any one of (((1))) to (((5))). (((7))) The first light-emitting sections are aligned in the first direction, the second light-emitting sections are aligned in the second direction relative to each of the first light-emitting sections; An area where light is irradiated by one light emitting section in the first light emitting section and an area where light is irradiated by another light emitting section arranged in the second direction relative to the one light emitting section in the second light emitting section overlap, The first switching unit and the second switching unit select either the one light-emitting section or the other light-emitting section and switch the selected section to a light-emitting state. The light-emitting device according to (((6))). (((8))) The light emitting device according to (((7))), wherein the first light emitting section and the second light emitting section emit different amounts of light. (((9))) Further provided is an optical system that guides the light emitted from each of the light emitting sections so that there is an overlapping portion between an area where light is irradiated by the one light emitting section of the first light emitting section and an area where light is irradiated by the other light emitting section of the second light emitting section; The optical system is configured so that the degree of diffusion of the light emitted from each of the light-emitting sections in the first direction is greater than the degree of diffusion in the second direction. The light emitting device according to (((7))). (((10))) Further provided is an optical system that guides the light emitted from each of the light emitting sections so that there is an overlapping portion between an area where light is irradiated by the one light emitting section of the first light emitting section and an area where light is irradiated by the other light emitting section of the second light emitting section; The light emitting device according to (((9))), wherein the optical system has no optical effect in the second direction and has an optical effect in the first direction. (((11))) a light-emitting device according to any one of (((1))) to (((10))); an acquisition unit that receives reflected light from an object to be measured that is irradiated with light emitted from the light emitting device and acquires information about the object to be measured; A measuring device comprising: (((12))) A substrate; a light-emitting section provided on the substrate and having a plurality of light-emitting sections, the light-emitting section being two-dimensionally arranged by aligning the plurality of light-emitting sections in a first direction and a second direction intersecting the first direction, and the number of the light-emitting sections aligned in the first direction being greater than the number of the light-emitting sections aligned in the second direction; Further, an optical system for guiding the light emitted from the light emitting section is provided, The optical system is a light-emitting device in which the degree of diffusion of light emitted from each of the light-emitting sections in the first direction is greater than the degree of diffusion in the second direction. (((13))) A substrate; a light-emitting section provided on the substrate and having a plurality of light-emitting sections, the light-emitting section being two-dimensionally arranged by aligning the plurality of light-emitting sections in a first direction and a second direction intersecting the first direction, and the number of the light-emitting sections aligned in the first direction being greater than the number of the light-emitting sections aligned in the second direction; Further, an optical system for guiding the light emitted from the light emitting section is provided, The optical system has no optical effect in the second direction and has an optical effect in the first direction. (((14))) A substrate; a light-emitting section provided on the substrate and having a plurality of light-emitting sections, the light-emitting section being two-dimensionally arranged by aligning the plurality of light-emitting sections in a first direction and a second direction intersecting the first direction, and the number of the light-emitting sections aligned in the first direction being greater than the number of the light-emitting sections aligned in the second direction; Further, an optical system for guiding the light emitted from the light emitting section is provided, The optical system is a light-emitting device that operates so that the area irradiated with light by one of the plurality of light-emitting sections overlaps with the area irradiated with light by other light-emitting sections that are aligned in the second direction relative to the one light-emitting section.

[0145] According to the light-emitting device of (((1))), the distance from the switching unit that switches multiple light-emitting sections between a light-emitting state and a non-light-emitting state can be made shorter than when the switching unit is located in one place on the substrate. According to the light emitting device of (((2))), the light emitting section connected to the first switching section and the light emitting section connected to the second switching section are prevented from unintentionally lighting up simultaneously, compared to when the first switching section and the second switching section are not connected. According to the light emitting device of (((3))), the wiring can be prevented from becoming complicated, compared to when the wiring is provided on the back surface or the like instead of along the second side. According to the light emitting device of (((4))), it is possible to prevent the device from becoming larger in size in the direction along the first side, compared to when the terminal is not provided along the other side of the second side. According to the light emitting device of (((5))), the distance between the first and second switching sections, which have high electrical resistance, and the light emitting sections can be made shorter than when the switching sections are provided in one place on the substrate. According to the light emitting device of (((6))), the distance between each light emitting section and the first switching section or the second switching section can be made shorter than when the first switching section and the second switching section are arranged along the second direction. According to the light emitting device of (((7))), one light emitting section and another light emitting section can irradiate light onto the same area. According to the light emitting device of (((8))), it is possible to select the amount of light to be emitted for each of the regions aligned in the first direction. According to the light emitting device of (((9))), it is possible to irradiate light onto a similar area in the second direction compared to when the degree of diffusion in the first direction by the optical system is the same as the degree of diffusion in the second direction. According to the light emitting device of (((10))), the light is more stable than when the optical system acts optically in the second direction. According to the measuring device of (((11))), the distance from the switching unit to each light-emitting section can be made shorter than when a switching unit that switches multiple light-emitting sections between a light-emitting state and a non-light-emitting state is provided in one location on the substrate. According to the light emitting device of (((12))), it is possible to irradiate light onto a similar area in the second direction compared to when the degree of diffusion in the first direction by the optical system is the same as the degree of diffusion in the second direction. According to the light emitting device of (((13))), the light is more stable than when the optical system acts optically in the second direction. According to the light emitting device of (((14))), one light emitting section and another light emitting section can irradiate light onto the same area. [Explanation of symbols]

[0146] 1...light source device, 5...3D sensor, 10...light emitting chip, 11...optical system, 12...control unit, 20...light emitting unit, 21, 22...light emitting section, 30...transfer unit, 30A...first transfer unit, 30B...second transfer unit, 40...connection unit, 41...signal line, 80...substrate, 100...measurement device, 200...measurement control unit, S...setting thyristor, T...transfer thyristor, VCSEL...vertical cavity surface emitting laser

Claims

1. A substrate; a light-emitting section provided on the substrate and having a plurality of light-emitting sections; a first switching unit provided on the substrate and configured to switch a first light-emitting section of the light-emitting unit between a light-emitting state and a non-light-emitting state; a second switching unit that is provided on the substrate on the opposite side of the light emitting unit from the first switching unit and that switches a second light emitting section different from the first light emitting section of the light emitting unit between a light emitting state and a non-light emitting state; A light emitting device comprising:

2. The light-emitting device according to claim 1, wherein the first switching unit and the second switching unit are connected by wiring, and the first light-emitting section and the second light-emitting section of the light-emitting unit are sequentially switched between a light-emitting state and a non-light-emitting state by a signal transmitted by the wiring.

3. the substrate is rectangular and has two opposing first sides and two opposing second sides connecting the first sides, The first switching portion is provided along one of the first sides, the second switching portion is provided along the other of the first sides, and the wiring is provided along one of the second sides. The light emitting device according to claim 2 .

4. The light emitting device according to claim 3 , further comprising a terminal provided along the other of the second side of the substrate, for receiving a supply of power to the light emitting portion.

5. The light emitting device according to claim 2 , wherein an electrical resistance between the first switching section and the first light emitting section and an electrical resistance between the second switching section and the second light emitting section are greater than an electrical resistance of the wiring.

6. The light-emitting unit is two-dimensionally arranged with the plurality of light-emitting sections aligned in a first direction and a second direction intersecting the first direction, and the number of the light-emitting sections aligned in the first direction is greater than the number of the light-emitting sections aligned in the second direction; The first switching portion and the second switching portion are arranged along the first direction. The light emitting device according to claim 1 .

7. The first light-emitting sections are aligned in the first direction, the second light-emitting sections are aligned with each of the first light-emitting sections in the second direction; An area where light is irradiated by one light emitting section in the first light emitting section and an area where light is irradiated by another light emitting section in the second light emitting section that is arranged in the second direction relative to the one light emitting section are overlapped, The first switching unit and the second switching unit select either the one light-emitting section or the other light-emitting section and switch the selected section to a light-emitting state. The light emitting device according to claim 6 .

8. The light emitting device according to claim 7 , wherein the first light emitting section and the second light emitting section emit different amounts of light.

9. Further provided is an optical system for guiding the light emitted from each of the light emitting sections so that there is an overlapping portion between an area where light is irradiated by the one light emitting section of the first light emitting section and an area where light is irradiated by the other light emitting section of the second light emitting section; The optical system is configured so that the degree of diffusion of the light emitted from each of the light-emitting sections in the first direction is greater than the degree of diffusion in the second direction. The light emitting device according to claim 7 .

10. Further provided is an optical system for guiding the light emitted from each of the light emitting sections so that there is an overlapping portion between an area where light is irradiated by the one light emitting section of the first light emitting section and an area where light is irradiated by the other light emitting section of the second light emitting section; The light emitting device according to claim 7 , wherein the optical system has no optical effect in the second direction and has an optical effect in the first direction.

11. A light emitting device according to any one of claims 1 to 10; an acquisition unit that receives reflected light from an object to be measured that is irradiated with light emitted from the light emitting device and acquires information about the object to be measured; A measuring device comprising:

Images