Submount manufacturing method, semiconductor laser device manufacturing method, semiconductor laser device mount method, submount, and semiconductor laser device

Abstract

To provide a submount manufacturing method that can reduce the defect of a shape of a submount.SOLUTION: A submount 100 includes a substrate 110. The substrate 110 includes a first surface 101, a second surface 102, a third surface 103, a fourth surface 104, a fifth surface 105, and a sixth surface 106. A submount manufacturing method includes a penetration part forming step S16 of forming a penetration part 12 that penetrates a base material 10, and a modifying step S20 of modifying the inside of the base material 10. In the modifying step S20, regions corresponding to the third surface 103, the fourth surface 104, and the sixth surface 106 are modified into a third surface modified region 213, a fourth surface modified region 214, and a sixth surface modified region 216, respectively. The third surface modified region 213 and the fourth surface modified region 214 are connected to the sixth surface modified region 216. The third surface modified region 213 and the fourth surface modified region 214 are separated from the penetration part 12.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a submount manufacturing method, a semiconductor laser device manufacturing method, a semiconductor laser device mounting method, a submount, and a semiconductor laser device. [Background technology]

[0002] Conventionally, submounts equipped with substrates have been used to mount elements such as semiconductor laser chips. Such submounts are generally formed by dividing a flat substrate. In submounts formed in this manner, shape defects such as burrs can occur during division. Therefore, technologies to solve the problem of shape defects occurring in submounts have been studied (see, for example, Patent Document 1).

[0003] Patent Document 1 discloses a technique in which a modified region is formed inside a wafer by irradiating the wafer with laser light, and the wafer is divided at the modified region to form a submount. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] International Publication No. 2019 / 026474 Summary of the Invention [Problem to be solved by the invention]

[0005] However, even with the wafer dividing method described in Patent Document 1, shape defects such as burrs may occur, particularly in the region between the modified region and the edge of the submount.

[0006] The present disclosure has been made to solve such problems, and aims to provide a submount manufacturing method and the like that can reduce shape defects in submounts. [Means for solving the problem]

[0007] In order to achieve the above object, a submount manufacturing method according to the present disclosure is a submount manufacturing method for manufacturing one or more submounts, each of the one or more submounts having a substrate, the substrate having a first surface, a second surface perpendicular to the first surface, a third surface perpendicular to the first surface and the second surface, a fourth surface opposite the third surface, a fifth surface opposite the first surface, and a sixth surface opposite the second surface, the submount manufacturing method including the substrate, a preparation step of preparing a plate-shaped base material having a first main surface and a second main surface opposite the first main surface, a through portion forming step of forming one or more through portions that penetrate between the first main surface and the second main surface of the base material, and a step of irradiating the base material with laser light. the first main surface includes the first surface, the second main surface includes the fifth surface, and the inner surfaces of the one or more through-holes include the second surface; in the modification process, regions corresponding to the third surface, the fourth surface, and the sixth surface are modified to form a modified region for the third surface, a modified region for the fourth surface, and a modified region for the sixth surface, the modified region for the third surface and the modified region for the sixth surface being connected, the modified region for the fourth surface and the modified region for the sixth surface being connected, and the modified region for the third surface and the modified region for the fourth surface being separated from each of the one or more through-holes.

[0008] In order to achieve the above-mentioned object, the semiconductor laser device manufacturing method according to the present disclosure is a method for manufacturing a semiconductor laser device, the semiconductor laser device comprising a submount and a semiconductor laser chip, and the semiconductor laser device manufacturing method includes a submount manufacturing step of manufacturing the one or more submounts by the submount manufacturing method, and a bonding step of bonding a semiconductor laser chip to the first surface of each of the one or more submounts.

[0009] In order to achieve the above object, the semiconductor laser device mounting method according to the present disclosure includes a semiconductor laser device manufacturing process for manufacturing the semiconductor laser device by the semiconductor laser device manufacturing method, and a mounting process for mounting the semiconductor laser device on a base.

[0010] In order to achieve the above-mentioned object, a submount according to the present disclosure includes a substrate having a first surface, a second surface perpendicular to the first surface, a third surface perpendicular to the first surface and the second surface, a fourth surface opposite the third surface, a fifth surface opposite the first surface, and a sixth surface opposite the second surface, wherein the surface roughness of the third surface, the fourth surface, and the sixth surface is greater than the surface roughness of the second surface, the third surface having a first smooth surface and a first rough surface having a surface roughness greater than that of the first smooth surface, the fourth surface having a second smooth surface and a second rough surface having a surface roughness greater than that of the second smooth surface, the first smooth surface including an end of the third surface facing the second surface, the second smooth surface including an end of the fourth surface facing the second surface, the first rough surface extending from at least a center of the third surface to an end of the sixth surface, and the second rough surface extending from at least a center of the fourth surface to an end of the sixth surface.

[0011] In order to achieve the above object, the semiconductor laser device according to the present disclosure includes the submount and a semiconductor laser chip bonded to the first surface of the submount. [Effects of the Invention]

[0012] According to the present disclosure, it is possible to provide a submount manufacturing method that can reduce defects in the shape of the submount. [Brief explanation of the drawings]

[0013] [Figure 1] FIG. 2 is a perspective view showing the configuration of a submount according to the first embodiment. [Figure 2] 3 is a flowchart showing the flow of a submount manufacturing method according to the first embodiment. [Figure 3] 1 is a plan view showing a configuration of a base material according to Embodiment 1. FIG. [Figure 4] 1 is a side view showing the configuration of a base material according to the first embodiment. [Figure 5] 3 is a plan view showing the configuration of a penetrating portion formed in a base material according to the first embodiment. FIG. [Figure 6] FIG. 6 is an enlarged view of the area enclosed by the dashed line in FIG. 5. [Figure 7] 4 is a plan view of the submount in the plan view of the third surface according to the first embodiment. FIG. [Figure 8] 10 is a plan view of the submount in the plan view of the fourth surface according to the first embodiment. FIG. [Figure 9] 10 is a plan view of the submount in the plan view of a sixth surface according to the first embodiment. FIG. [Figure 10] 10 is a plan view showing the configuration of a penetrating portion formed in a base material in a submount manufacturing method of a comparative example. FIG. [Figure 11] FIG. 11 is an enlarged view of the area enclosed by the dashed line in FIG. [Figure 12] 10A and 10B are diagrams illustrating a submount manufactured by a submount manufacturing method of a comparative example. [Figure 13] 1 is a side view showing an overview of a semiconductor laser device according to a first embodiment. [Figure 14] 3 is a flowchart showing the flow of a semiconductor laser device manufacturing method according to the first embodiment. [Figure 15] FIG. 2 is a first view for explaining a bonding step in the method for manufacturing the semiconductor laser device according to the first embodiment. [Figure 16] FIG. 4 is a second view for explaining the bonding step in the method for manufacturing the semiconductor laser device according to the first embodiment. [Figure 17] 4 is a flowchart showing the flow of a semiconductor laser device mounting method according to the first embodiment. [Figure 18] FIG. 2 is a first diagram for explaining a mounting step of the semiconductor laser device mounting method according to the first embodiment. [Figure 19] FIG. 2 is a second diagram for explaining the mounting step of the semiconductor laser device mounting method according to the first embodiment. [Figure 20]FIG. 10 is a diagram showing a state in which a submount of a comparative example is held by a holding member. [Figure 21] 3 is a diagram showing a state in which the submount according to the first embodiment is held by a holding member. FIG. [Figure 22] 10 is a flowchart showing the flow of a submount manufacturing method according to the second embodiment. [Figure 23] 10 is a plan view showing the configuration of a penetrating portion formed in a base material according to a second embodiment. FIG. [Figure 24] FIG. 24 is an enlarged view of the area enclosed by the dashed line in FIG. 23. DETAILED DESCRIPTION OF THE INVENTION

[0014] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. Note that each of the embodiments described below represents a specific example of the present disclosure. Therefore, the numerical values, shapes, materials, components, the arrangement and connection of the components, steps (processes), and the order of steps shown in the following embodiments are merely examples and are not intended to limit the present disclosure.

[0015] Furthermore, each figure is a schematic diagram and is not necessarily an exact illustration. Therefore, the scales and the like do not necessarily match in each figure. In each figure, the same reference numerals are used to denote substantially the same components, and redundant explanations will be omitted or simplified.

[0016] Furthermore, in this specification, terms indicating the relationship between elements, such as "equal," terms indicating the shape of elements, such as "parallel," "perpendicular," "plate-like," "disk-like," "arc-like," and "parabolic," as well as numerical ranges, do not express only the strict meaning but also include a substantially equivalent range, for example, a difference of about several percent. For example, "perpendicular" means an angle of about 85° or more and 95° or less.

[0017] (Embodiment 1) A method for manufacturing a submount according to the first embodiment will be described.

[0018] [1-1. Submount] A submount according to the present embodiment and a method for manufacturing the same will be described. First, the submount according to the present embodiment will be described with reference to Fig. 1. Fig. 1 is a perspective view showing the configuration of a submount 100 according to the present embodiment.

[0019] The submount 100 according to this embodiment is a member including a substrate 110 for mounting an element such as a semiconductor laser chip (that is, a semiconductor laser element).

[0020] The substrate 110 is a rectangular parallelepiped member, and in this embodiment is a Si (silicon) substrate. The material of the substrate 110 is not limited to Si. The substrate 110 may be formed of, for example, glass, SiC (silicon carbide), or the like. The dimension of each side of the substrate 110 is, for example, 0.1 mm or more and 1 mm or less. The dimension of each side of the substrate 110 may be 0.2 mm or less.

[0021] 1, the substrate 110 is a substantially rectangular parallelepiped and has a first surface 101, a second surface 102, a third surface 103, a fourth surface 104, a fifth surface 105, and a sixth surface 106. In this embodiment, the substrate 110 has a first cutout portion 113a and a second cutout portion 113b.

[0022] The first surface 101 is a surface on which an element such as a semiconductor laser chip is mounted. The second surface 102 is a surface perpendicular to the first surface 101. The third surface 103 is a surface perpendicular to the first surface 101 and the second surface 102. The fourth surface 104 is a surface opposite to the third surface 103. In other words, the fourth surface 104 is a surface of the substrate 110 located on the back side of the third surface 103. In this embodiment, the fourth surface 104 is perpendicular to the first surface 101 and the second surface 102. The fifth surface 105 is a surface opposite to the first surface 101. In this embodiment, the fifth surface 105 is perpendicular to the second surface 102, the third surface 103, and the fourth surface 104. The sixth surface 106 is a surface opposite to the second surface 102. In this embodiment, the sixth surface 106 is perpendicular to the first surface 101 , the third surface 103 , the fourth surface 104 , and the fifth surface 105 .

[0023] In this embodiment, the surface roughness of the third surface 103, the fourth surface 104, and the sixth surface 106 is greater than the surface roughness of the second surface 102. The detailed configuration of each surface of the substrate 110 will be described later.

[0024] The first cutout 113a is a concave portion formed in a portion where the second surface 102 and the third surface 103 are adjacent to each other. The second cutout 113b is a concave portion formed in a portion where the second surface 102 and the fourth surface 104 are adjacent to each other. The first cutout 113a and the second cutout 113b have a concave surface 114a including a curved surface 115a and a concave surface 114b including a curved surface 115b, respectively. In this embodiment, the curved surfaces 115a and 115b have an arc shape when viewed from above from the first surface 101 side of the submount 100. That is, the cross sections of the curved surfaces 115a and 115b parallel to the first surface 101 have an arc shape. The radius of the cross sections of the curved surfaces 115a and 115b parallel to the first surface 101 may be 5 μm or more. This prevents tensile force from concentrating at positions corresponding to the curved surfaces 115a and 115b when the submount 100 is divided into individual pieces using an expanding tape or the like in a manufacturing method of the submount 100, which will be described later. In this embodiment, the radius of the curved surfaces 115a and 115b in a cross section parallel to the first surface 101 is approximately 10 μm. The cross sections of the first notch 113a and the second notch 113b parallel to the first surface 101 may be the same at any position from the end on the first surface 101 side to the end on the fifth surface 105 side.

[0025] In this embodiment, the submount 100 includes a first metal film 121 disposed on the first surface 101, and a solder film 116. The solder film 116 is disposed on the first metal film 121. This allows an element such as a semiconductor laser chip to be bonded to the substrate 110 via the solder film 116.

[0026] The configuration of the first metal film 121 is not particularly limited. The first metal film 121 is, for example, a metal film in which Ti, Pt, and Au are stacked from the substrate 110 side. The film thickness of each of the Ti, Pt, and Au layers is, for example, approximately 0.05 μm or more and 1 μm or less. The Ti, Pt, and Au layers function as an adhesion film, a diffusion prevention film, and an electrode film, respectively.

[0027] Furthermore, in this embodiment, first metal film 121 has a strip-shaped metal film removal portion 117 formed thereon, extending in a direction perpendicular to second surface 102. Metal film removal portion 117 is a portion where a part of first metal film 121 has been removed. In this embodiment, metal film removal portion 117 is formed by removing the Au layer from first metal film 121. Solder film 116 is disposed on first metal film 121 on the fourth surface 104 side of metal film removal portion 117. This prevents solder film 116 from flowing beyond metal film removal portion 117 toward third surface 103 when solder film 116 is melted to join the element to submount 100.

[0028] Furthermore, the solder film 116 is disposed at a position on the fourth surface 104 side of the first surface 101. In other words, the first surface 101 is divided by a line segment perpendicular to the second surface 102 so as to have equal areas into a first region R1 on the third surface 103 side and a second region R2 on the fourth surface 104 side, and more solder film 116 is disposed in the second region R2 than in the first region R1. This allows elements to be disposed offset on the submount 100.

[0029] In this embodiment, the submount 100 also includes a second metal film 122 disposed on the second surface 102. This allows the second surface 102 of the substrate 110 to be bonded to another member via solder or the like. The configuration of the second metal film 122 is not particularly limited. The second metal film 122 may have the same configuration as the first metal film 121, for example.

[0030] In the following description, the first surface 101, the second surface 102, the third surface 103, the fourth surface 104, the fifth surface 105, the sixth surface 106, the first cutout portion 113a, or the second cutout portion 113b of the substrate 110 may be referred to as the first surface 101, the second surface 102, the third surface 103, the fourth surface 104, the fifth surface 105, the sixth surface 106, the first cutout portion 113a, or the second cutout portion 113b of the submount 100.

[0031] [1-2. Submount manufacturing method] A submount manufacturing method according to this embodiment will be described with reference to FIGS. 2 to 6. FIG. 2 is a flowchart showing the flow of the submount manufacturing method according to this embodiment. FIG. 3 is a plan view showing the configuration of base material 10 according to this embodiment. FIG. 3 shows a plan view of first main surface 10a of base material 10 as seen in plan view. FIG. 4 is a side view showing the configuration of base material 10 according to this embodiment. FIG. 4 shows a side view of base material 10 as seen from a direction parallel to first main surface 10a. FIG. 5 is a plan view showing the configuration of through portion 12 formed in base material 10 according to this embodiment. FIG. 5 shows a plan view similar to FIG. 3. FIG. 6 is an enlarged view of the interior of dashed frame VI shown in FIG. 5.

[0032] The submount manufacturing method according to this embodiment is a method for manufacturing one or more submounts 100. As described above, each of the one or more submounts 100 has a substrate 110. The substrate 110 has a first surface 101, a second surface 102 perpendicular to the first surface 101, a third surface 103 perpendicular to the first surface 101 and the second surface 102, a fourth surface 104 opposite the third surface 103, a fifth surface 105 opposite the first surface 101, and a sixth surface 106 opposite the second surface 102.

[0033] As shown in FIG. 2, in the submount manufacturing method, first, a plate-shaped base material 10 as shown in FIGS. 2 and 3 is prepared (preparation step S10). The base material 10 includes a substrate 110 provided for the submount 100. That is, the substrate 110 is formed by dividing the base material 10. As shown in FIG. 4, the base material 10 has a first main surface 10a and a second main surface 10b opposite to the first main surface 10a. In this embodiment, the first main surface 10a includes the first surface 101 of the substrate 110, and the second main surface 10b includes the fifth surface 105 of the substrate 110. In this embodiment, the base material 10 is a disk-shaped silicon wafer. Note that the material of the base material 10 is not limited to Si. The base material 10 may be formed of, for example, glass, SiC, or the like.

[0034] 2, a first metal film 121 is formed on the first main surface 10a of the base material 10 (first metal film forming step S12). In the present embodiment, as described above, the first metal film 121 is formed in an area corresponding to a predetermined area on the first surface 101 of each substrate 110 included in the base material 10. The first metal film 121 is formed using, for example, sputtering or electron beam evaporation, photolithography, and etching.

[0035] 2, a solder film 116 is formed on the first main surface 10a of the base material 10 (solder film forming step S14). In this embodiment, the solder film 116 is formed on the first metal film 121. The solder film 116 is formed by using, for example, sputtering or electron beam evaporation, photolithography, and etching.

[0036] Next, as shown in FIG. 2, one or more through holes 12 (see FIG. 5) are formed penetrating between the first main surface 10a and the second main surface 10b of the base material 10 (through hole forming step S16). Note that in FIG. 5, the first metal film 121 and the solder film 116 formed on the first main surface 10a are not shown. The inner surfaces of the one or more through holes 12 include the second surface 102 of the substrate 110. That is, the second surface 102 of the substrate 110 is formed by forming the one or more through holes 12. In addition, in this embodiment, each of the one or more through holes 12 has a recess 13 having a concave shape in a plan view of the first main surface 10a. The recess 13 corresponds to the first cutout portion 113a and the second cutout portion 113b of the substrate 110. A portion of one recess 13 corresponds to the first cutout portion 113a, and another portion corresponds to the second cutout portion 113b. Of the inner surface of the through portion 12, the region between two adjacent recesses 13 corresponds to the second surface 102 of the substrate 110. In this way, in the through portion forming step S16, a first cutout portion 113a is formed in the portion where the second surface 102 and the third surface 103 of the substrate 110 are adjacent, and a second cutout portion 113b is formed in the portion where the second surface 102 and the fourth surface 104 of the substrate 110 are adjacent.

[0037] In the through-portion forming step S16, the one or more through-portions 12 are formed by, for example, dry etching. More specifically, the one or more through-portions 12 are formed by, for example, performing photolithography and dry etching on the base material 10. Fig. 5 shows the state of the base material 10 according to this embodiment after the etching process.

[0038] 2, a second metal film 122 is formed on the second surface 102 (second metal film forming step S18). In this embodiment, as shown in FIG. 6, the second metal film 122 is formed in a region corresponding to the second surface 102 included in the inner surface of one or more through-holes 12. The second metal film 122 is formed using, for example, a sputtering method or a vapor deposition method. In forming the second metal film 122, for example, by supplying metal particles toward the second main surface 10b and the second surface 102 of the base material 10 from a direction oblique to the second main surface 10b, the second metal film 122 can be formed on the second surface 102 without forming a metal film on the first surface 101.

[0039] Next, as shown in FIG. 2, the base material 10 is irradiated with laser light to modify the interior of the base material 10 (modification step S20). As shown in FIG. 6, in the modification step S20, regions corresponding to the third surface 103, fourth surface 104, and sixth surface 106 of the substrate 110 are modified, respectively, to form a third-surface modified region 213, a fourth-surface modified region 214, and a sixth-surface modified region 216. In FIG. 6, the periphery of each modified region is indicated by a dashed ellipse. In this embodiment, in the base material 10, the third-surface modified region 213 corresponding to one submount 100 is also the fourth-surface modified region 214 of another adjacent submount 100. Furthermore, in the base material 10, the sixth-surface modified region 216 corresponding to one submount 100 is also the sixth-surface modified region 216 of another adjacent submount 100.

[0040] Each modified region includes minute cracks formed by irradiation with laser light. In the modification step S20, the laser light is focused inside the base material 10, thereby forming the modified region inside the base material 10. According to such modification step S20, the modified region is formed inside the base material 10, so that the generation of debris can be suppressed and the cutting allowance can also be reduced.

[0041] The laser light used in the modification step S20 may be laser light with a wavelength that is transparent to the silicon wafer 201 and has sufficient power to form each modified region. Furthermore, for example, when the laser light is irradiated onto the second main surface 10b corresponding to the fifth surface 105, the surface roughness (arithmetic mean roughness Ra) of the irradiated surface, that is, the second main surface 10b, may be 0.2 μm or less, and Si, which is a material that constitutes the substrate 110, may be exposed. This makes it possible to suppress scattering of the laser light at the incident surface of the base material 10, thereby further improving the cutting quality.

[0042] In this embodiment, the one or more submounts 100 include a first submount 100a and a second submount 100b, as shown in FIG. 6 . In the base material 10, the region corresponding to the first submount 100a and the region corresponding to the second submount 100b are arranged adjacent to each other. In the modification step S20, a sixth-surface modified region 216 is formed in the region between the region corresponding to the first submount 100a and the region corresponding to the second submount 100b. In this case, the sixth surface 106 of the first submount 100a and the sixth surface 106 of the second submount 100b are arranged opposite each other. In this manner, the sixth-surface modified region 216 is formed in the region corresponding to the sixth surface 106 of the first submount 100a and the sixth surface 106 of the second submount 100b, which are opposed to each other.

[0043] Furthermore, a third-surface modified region 213 is formed in each of the regions corresponding to the third surface 103 of the first submount 100a and the third surface 103 of the second submount 100b. Further, a fourth-surface modified region 214 is formed in each of the regions corresponding to the fourth surface 104 of the first submount 100a and the fourth surface 104 of the second submount 100b.

[0044] As shown in FIG. 6, the third surface modified region 213 and the sixth surface modified region 216 are connected, and the fourth surface modified region 214 and the sixth surface modified region 216 are connected.

[0045] The third-surface modified region 213 and the fourth-surface modified region 214 are each spaced apart from one or more through-holes 12. In other words, when the modified region is formed by laser light, the modified region does not reach the inner surface of the through-hole 12. This prevents the appearance quality of the submount 100 from being reduced by forming the modified region on the second surface 102 or each cutout portion.

[0046] 6 , in a plan view of the first main surface 10a, the third-surface modified region 213 formed in the region corresponding to the third surface 103 of the first submount 100a and the fourth-surface modified region 214 formed in the region corresponding to the fourth surface 104 of the second submount 100b are connected by the sixth-surface modified region 216. Furthermore, in a plan view of the first main surface 10a, the fourth-surface modified region 214 formed in the region corresponding to the fourth surface 104 of the first submount 100a and the third-surface modified region 213 formed in the region corresponding to the third surface 103 of the second submount 100b are connected by the sixth-surface modified region 216.

[0047] Next, as shown in FIG. 2, one or more submounts 100 are singulated (singulation step S22). In this embodiment, the base material 10 is attached to an expanding tape, and the expanding tape is stretched. Here, cracks are formed in each modified region by irradiation with laser light, so when the expanding tape is stretched, the base material 10 can be divided along a plane including each modified region. Here, the recess 13 of the penetrating portion 12 has a curved surface corresponding to the curved surface 115a of the first cutout portion 113a and the curved surface 115b of the second cutout portion 113b of the submount 100. The radius of the curved surface in a cross section parallel to the first main surface 10a may be 5 μm or more. This prevents tensile force from concentrating on the curved surface in the singulation step S22. In this embodiment, the radius of the curved surface in a cross section parallel to the first main surface 10a is approximately 10 μm.

[0048] The above steps allow the manufacture of a submount 100 as shown in Fig. 1. The third surface 103, fourth surface 104, and sixth surface 106 of the submount 100 manufactured by the submount manufacturing method according to this embodiment will be described with reference to Figs. 7 to 9. Figs. 7, 8, and 9 are plan views of the submount 100 in plan view of the third surface 103, fourth surface 104, and sixth surface 106 according to this embodiment, respectively.

[0049] As shown in FIG. 7, the third surface 103 has a first smooth surface 112a and a first rough surface 111a that has a larger surface roughness (that is, is rougher) than the first smooth surface 112a.

[0050] The first smooth surface 112a corresponds to an area that was not modified in the modification step S20, and is a fractured surface formed by cutting in the singulation step S22. In the present embodiment, the first smooth surface 112a includes an end of the third surface 103 on the first surface 101 side, an end on the second surface 102 side, and an end on the fifth surface 105 side.

[0051] The first rough surface 111a is a region corresponding to the modified region 213 for the third surface formed in the modification step S20. In the modified region, a fine uneven structure is formed by melting the base material 10. Therefore, the surface roughness of the first rough surface 111a, which is a region corresponding to the modified region 213 for the third surface, is greater than that of the first smooth surface 112a. The first rough surface 111a extends at least from the center of the third surface 103 to the end on the sixth surface 106 side. In this embodiment, the first rough surface 111a is spaced apart from the end of the third surface 103 on the first surface 101 side, the end on the second surface 102 side, and the end on the fifth surface 105 side.

[0052] As shown in FIG. 8, the fourth surface 104 has a second smooth surface 112b and a second rough surface 111b that has a surface roughness greater than that of the second smooth surface 112b.

[0053] The second smooth surface 112b corresponds to an area that was not modified in the modification step S20, and is a fractured surface formed by cutting in the singulation step S22. In the present embodiment, the second smooth surface 112b includes an end of the fourth surface 104 on the first surface 101 side, an end on the second surface 102 side, and an end on the fifth surface 105 side.

[0054] The second rough surface 111b is a region corresponding to the fourth-surface modified region 214 formed in the above-described modification step S20. The second rough surface 111b extends at least from the center of the fourth surface 104 to the end on the sixth surface 106 side. In the present embodiment, the second rough surface 111b is spaced apart from the end of the fourth surface 104 on the first surface 101 side, the end on the second surface 102 side, and the end on the fifth surface 105 side.

[0055] As shown in FIG. 9, the sixth surface 106 has a third smooth surface 112c and a third rough surface 111c having a surface roughness greater than that of the third smooth surface 112c.

[0056] The third smooth surface 112c corresponds to an area that was not modified in the modification step S20, and is a fractured surface formed by cutting in the singulation step S22. In this embodiment, the third smooth surface 112c has a first-surface-side smooth surface 112c1 and a fifth-surface-side smooth surface 112c2 spaced apart from the first-surface-side smooth surface 112c1. The first-surface-side smooth surface 112c1 includes an end of the sixth surface 106 on the first surface 101 side. The fifth-surface-side smooth surface 112c2 includes an end of the sixth surface 106 on the fifth surface 105 side.

[0057] The third rough surface 111c is a region corresponding to the sixth-surface modified region 216 formed in the above-described modification step S20. The third rough surface 111c extends from the end of the sixth surface 106 on the third surface 103 side to the end of the sixth surface 106 on the fourth surface 104 side. In the present embodiment, the third rough surface 111c is located between the first-surface-side smooth surface 112c1 and the fifth-surface-side smooth surface 112c2, and is spaced apart from the end of the sixth surface 106 on the first surface 101 side and the end of the sixth surface 106 on the fifth surface 105 side.

[0058] The surface roughness (Ra) of the first smooth surface 112a, the second smooth surface 112b, and the third smooth surface 112c is, for example, 0.2 μm or less. The surface roughness (Ra) of the first rough surface 111a, the second rough surface 111b, and the third rough surface 111c is, for example, 1.0 μm or less.

[0059] As described above, the third surface 103, the fourth surface 104, and the sixth surface 106 of the substrate 110 each include a rough surface. Therefore, the surface roughness of the third surface 103, the fourth surface 104, and the sixth surface 106 is greater than the surface roughness of the second surface 102 formed by dry etching. In this embodiment, the surface roughness of the third surface 103, the fourth surface 104, and the sixth surface 106 is greater than the surface roughness of the first surface 101 included in the first main surface 10a of the base material 10, and the fifth surface 105 included in the second main surface 10b.

[0060] The first main surface 10a of the base material 10, including the first surface 101, may be the (100) plane of a silicon wafer. The third surface 103 and the fourth surface 104 may each be the {100} plane of a silicon wafer, or each may be the {110} plane of a silicon wafer. This allows the cutting direction in the singulation step S22 to correspond to the crystal orientation of the silicon wafer, which is the material of the substrate 110. This reduces shape defects in the substrate 110.

[0061] [1-3. Effects of the submount and its manufacturing method] The effects of the submount 100 and the method for manufacturing the same according to this embodiment will be described below. First, the effects of the method for manufacturing the submount according to this embodiment will be described.

[0062] The submount manufacturing method according to this embodiment is a method for manufacturing one or more submounts 100. Each of the one or more submounts 100 has a substrate 110, which has a first surface 101, a second surface 102 perpendicular to the first surface 101, a third surface 103 perpendicular to the first surface 101 and the second surface 102, a fourth surface 104 opposite the third surface 103, a fifth surface 105 opposite the first surface 101, and a sixth surface 106 opposite the second surface 102. The submount manufacturing method includes a preparation step S10 of preparing a plate-shaped base material 10 including a substrate 110 and having a first main surface 10a and a second main surface 10b opposite to the first main surface 10a, a through-portion forming step S16 of forming one or more through-portions 12 that penetrate between the first main surface 10a and the second main surface 10b of the base material 10, a modification step S20 of modifying the inside of the base material 10 by irradiating the base material 10 with laser light, and a singulation step S22 of singulating one or more submounts 100. The first main surface 10a includes a first surface 101, the second main surface 10b includes a fifth surface 105, and the inner surfaces of the one or more through-portions 12 include a second surface 102. In the modification step S20, the regions corresponding to the third surface 103, the fourth surface 104, and the sixth surface 106 are modified, respectively, to form a modified region for the third surface 213, a modified region for the fourth surface 214, and a modified region for the sixth surface 216. The modified region for the third surface 213 and the modified region for the sixth surface 216 are connected, and the modified region for the fourth surface 214 and the modified region for the sixth surface 216 are connected. The modified region for the third surface 213 and the modified region for the fourth surface 214 are each spaced apart from one or more through-holes 12.

[0063] The effects of the submount manufacturing method according to the present embodiment described above will be explained with reference to Figs. 10 to 12, in comparison with a submount manufacturing method of a comparative example. Fig. 10 is a plan view showing the configuration of a through portion 1012 formed in base material 10 in the submount manufacturing method of the comparative example. Fig. 11 is an enlarged view of the inside of dashed frame XI shown in Fig. 10. Fig. 12 is a diagram showing a submount 1100 manufactured by the submount manufacturing method of the comparative example.

[0064] The submount manufacturing method of the comparative example is a method for manufacturing one or more submounts 1100. As shown in FIG. 12 , each of the one or more submounts 1100 has a substrate 1110, which has a first surface 101, a second surface 102 perpendicular to the first surface 101, a third surface 1103 perpendicular to the first surface 101 and the second surface 102, a fourth surface 1104 opposite the third surface 1103, and a sixth surface 1106 opposite the second surface 102. Although not shown in FIG. 12 , the substrate 1110 has a fifth surface 105 similar to that of the substrate 110 according to the present embodiment. The fifth surface 105 of the substrate 1110 is the surface opposite the first surface 101.

[0065] In the submount manufacturing method of the comparative example, steps from preparation step S10 to solder film formation step S14 are carried out in the same manner as in the submount manufacturing method of the present embodiment. Note that the positions at which first metal film 121 and solder film 116 are formed in the submount manufacturing method of the comparative example differ from those in the submount manufacturing method of the present embodiment (see FIG. 11).

[0066] Next, in the submount manufacturing method of the comparative example, one or more through holes 1012 are formed that penetrate between the first main surface 10a and the second main surface 10b of the base material 10. Each of the one or more through holes 1012 has a recess 1013 that has a concave shape when viewed from above the first main surface 10a. The configuration of each of the one or more through holes 1012 of the comparative example differs from the through hole 12 of the present embodiment. In the comparative example, as shown in FIGS. 10 and 11 , the inner surface of the through hole 1012 includes the second surface 102 and a sixth surface 1106. As shown in FIG. 11 , one or more submounts 1100 arranged in a row are included between two adjacent through holes 1012.

[0067] Subsequently, a second metal film 122 is formed on the inner surface of the through portion 1012 in a region corresponding to the second surface 102 .

[0068] Next, in the base material 10 as shown in FIG. 10, a third surface modified region 1213 and a fourth surface modified region 1214 are formed in regions corresponding to the third surface 1103 and the fourth surface 1104 of the substrate 1110, respectively.

[0069] Subsequently, in the submount manufacturing method of the comparative example, similarly to the present embodiment, a singulation step is performed, thereby forming a submount 1100 as shown in FIG.

[0070] In the comparative example submount manufacturing method, as shown in FIG. 11, the third surface modified region 1213 and the fourth surface modified region 1214 are separated from the through portion 1012 to prevent deterioration in the appearance quality of the submount 1100.

[0071] Between each modified region and the through portion 1012, burrs 1100x as shown in FIG. 12 may occur during the singulation process. In particular, in the submount manufacturing method of the comparative example, the lengths of the third-surface modified region 1213 and the fourth-surface modified region 1214 are shorter than the lengths of the third surface 1103 and the fourth surface 1104 in a plan view of the first main surface 10a of the base material 10. When the length of each modified region is short, the effect of errors in the formation position on the length of each modified region becomes significant. For example, if the formation position of the fourth-surface modified region 1214 is shifted toward the second surface 102 from the predetermined position, burrs 1100x may form on the fourth surface 1104 or chipping may occur, as shown in FIG. 12. In other words, the shape of the submount 1100 is likely to be deformed.

[0072] In contrast, in the submount manufacturing method according to the present embodiment, the third-surface modified region 213 and the sixth-surface modified region 216 are connected, and the fourth-surface modified region 214 and the sixth-surface modified region 216 are connected. Therefore, the ends of the third surface 103 and the fourth surface 104 on the sixth surface 106 side are formed along the respective modified regions. This reduces the likelihood of burrs or chips being formed on the ends of the third surface 103 and the fourth surface 104 on the sixth surface 106 side. Furthermore, because the third-surface modified region 213 and the fourth-surface modified region 214 are each connected to the sixth-surface modified region 216, separation of the third surface 103 and the fourth surface 104 can be more reliably performed in the singulation step S22. In other words, processing defects, such as failure to separate the third surface 103 and the fourth surface 104, can be reduced in the singulation step S22.

[0073] Furthermore, in this embodiment, in a plan view of the first main surface 10a, the lengths of the third surface modified region 213 and the fourth surface modified region 214 can be made longer than the lengths of the third surface 103 and the fourth surface 104. This improves the accuracy of the formation position of each modified region.

[0074] Furthermore, when manufacturing a small submount using the submount manufacturing method of the comparative example, the length of each modified region in a plan view of the first main surface 10a becomes smaller, reducing the precision of the positioning of each modified region. In contrast, as described above, the submount manufacturing method of the present embodiment makes it possible to make the length of each modified region longer than the dimensions of each surface of the submount, thereby preventing a decrease in the precision of the positioning of each modified region. Therefore, even smaller submounts can be manufactured while reducing shape defects.

[0075] In the submount manufacturing method according to this embodiment, the one or more submounts 100 include a first submount 100a and a second submount 100b, and the region corresponding to the first submount 100a and the region corresponding to the second submount 100b may be disposed adjacent to each other in the base material 10. In the modification step S20, a sixth-surface modified region 216 may be formed in the region between the region corresponding to the first submount 100a and the region corresponding to the second submount 100b.

[0076] This reduces the space between the sixth surface 106 of the first submount 100a and the sixth surface 106 of the second submount 100b, allowing more submounts 100 to be formed from the base material 10. For example, compared to the submount manufacturing method of the comparative example, the submount manufacturing method of this embodiment makes it possible to increase the number of submounts that can be manufactured from one base material 10 by about 1.3 times.

[0077] In the submount manufacturing method of this embodiment, in a planar view of the first main surface 10a, the third-surface modified region 213 formed in the area corresponding to the third surface 103 of the first submount 100a and the fourth-surface modified region 214 formed in the area corresponding to the fourth surface 104 of the second submount 100b may be connected by the sixth-surface modified region 216.

[0078] As a result, in a plan view of the first main surface 10a, the third-surface modified region 213 of the first submount 100a and the fourth-surface modified region 214 of the second submount 100b are connected on the same straight line. In this case, the length of each modified region can be increased by approximately twice as much as when only one of the third-surface modified region 213 of the first submount 100a and the fourth-surface modified region 214 of the second submount 100b is formed. Increasing the length of each modified region in this way improves the accuracy of the formation position of each modified region. Therefore, it is possible to reduce defects in the shape of the submount 100 caused by deviations in the formation position of each modified region from the predetermined position.

[0079] In the through portion forming step S16 of the submount manufacturing method according to this embodiment, one or more through portions 12 may be formed using dry etching.

[0080] This makes it possible to reduce the surface roughness of the second surface 102 included in the through portion 12.

[0081] In the through portion forming step S16 of the submount manufacturing method according to this embodiment, a first cutout portion 113a may be formed in the portion where the second surface 102 and the third surface 103 are adjacent, and a second cutout portion 113b may be formed in the portion where the second surface 102 and the fourth surface 104 are adjacent.

[0082] This makes it possible, for example, to guide the molten solder to each of these notches when forming solder film 116 on first surface 101 and melting solder film 116. This prevents the molten solder from spilling onto second surface 102. Furthermore, by forming each notch at a specific location on submount 100, it becomes easier to identify each surface of submount 100.

[0083] In the submount manufacturing method according to this embodiment, first cutout portion 113a may have concave surface 114a including curved surface 115a, and second cutout portion 113b may have concave surface 114b including curved surface 115b.

[0084] As a result, for example, since each cutout portion has a respective curved surface, when the base material 10 is stretched in the singulation step S22, stress is concentrated at a specific position of each cutout portion, which makes it possible to prevent the base material 10 from being divided at each cutout portion. Therefore, since the base material 10 can be divided at a position along each modified region, it is possible to improve the positional accuracy of the third surface 103 and the fourth surface 104 formed by division and the flatness of the third surface 103 and the fourth surface 104. The shape of each curved surface in a cross section parallel to the first surface 101 may be, for example, an arc shape or a parabolic shape.

[0085] The submount manufacturing method according to this embodiment may further include a solder film forming step S14 of forming a solder film 116 on the first main surface 10a.

[0086] In this way, by forming the solder film 116 on the first surface 101 included in the first main surface 10a, an element such as a semiconductor laser chip can be bonded to the submount 100 using the solder film 116.

[0087] The submount manufacturing method according to the present embodiment may further include a second metal film forming step S18 of forming a second metal film 122 on the second surface 102. The second metal film 122 is an example of a metal film formed on the second surface 102. The second metal film forming step S18 is an example of a metal film forming step of forming a metal film on the second surface 102.

[0088] This allows the submount 100 to be mounted on a mounting substrate or the like using the second metal film 122.

[0089] Next, the effects of the submount 100 according to this embodiment will be described.

[0090] The submount 100 according to this embodiment includes a substrate 110. The substrate 110 has a first surface 101, a second surface 102 perpendicular to the first surface 101, a third surface 103 perpendicular to the first surface 101 and the second surface 102, a fourth surface 104 opposite the third surface 103, a fifth surface 105 opposite the first surface 101, and a sixth surface 106 opposite the second surface 102. The surface roughness of the third surface 103, the fourth surface 104, and the sixth surface 106 is greater than that of the second surface 102. The third surface 103 has a first smooth surface 112a and a first rough surface 111a having a surface roughness greater than that of the first smooth surface 112a. The fourth surface 104 has a second smooth surface 112b and a second rough surface 111b having a surface roughness greater than that of the second smooth surface 112b. First smooth surface 112a includes the end of third surface 103 on the second surface 102 side, and second smooth surface 112b includes the end of fourth surface 104 on the second surface 102 side. First rough surface 111a extends from at least the center of third surface 103 to the end on the sixth surface 106 side, and second rough surface 111b extends from at least the center of fourth surface 104 to the end on the sixth surface 106 side.

[0091] In this way, the first smooth surface 112a includes the end of the third surface 103 on the second surface 102 side, and the second smooth surface 112b includes the end of the fourth surface 104 on the second surface 102 side, thereby improving the appearance quality of the second surface 102.

[0092] Furthermore, since a heat-generating element such as a semiconductor laser chip is often bonded to the submount 100, the submount 100 is required to have improved heat dissipation properties. In the submount 100 according to this embodiment, the surface roughness of the sixth surface 106 is greater than the surface roughness of the second surface 102. This allows the surface area of the submount 100 to be increased compared to, for example, a submount 1100 manufactured by a submount manufacturing method of the comparative example, in which the surface roughness of the sixth surface 1106 is approximately the same as the surface roughness of the second surface 102. This therefore allows the heat dissipation properties of the submount 100 to be improved, for example, to the air surrounding the submount 100.

[0093] Furthermore, the submount 100 may be moved to a mounting substrate or the like while being held by a holding member such as a robot arm and mounted thereon. In such cases, it is necessary to hold the submount 100 stably. In the submount 100 according to this embodiment, the first rough surface 111a extends from at least the center of the third surface 103 to the end on the sixth surface 106 side, and the second rough surface 111b extends from at least the center of the fourth surface 104 to the end on the sixth surface 106 side. Since the first rough surface 111a and the second rough surface 111b extend from the centers of the third surface 103 and the fourth surface 104, respectively, to the end on the sixth surface 106 side, the submount 100 can be held stably when the substrate 110 of the submount 100 is held by a holding member in a region including the end on the sixth surface 106 side of each of the third surface 103 and the fourth surface 104. This effect will be described in detail later.

[0094] In the submount 100 according to this embodiment, the sixth surface 106 has a third smooth surface 112c and a third rough surface 111c having a surface roughness greater than that of the third smooth surface 112c, and the third rough surface 111c of the sixth surface 106 may extend from the end of the sixth surface 106 on the third surface 103 side to the end of the sixth surface 106 on the fourth surface 104 side.

[0095] This increases the surface area of the sixth face 106. Therefore, the heat dissipation characteristics from the submount 100 to the air surrounding the submount 100 can be improved.

[0096] In the submount 100 according to this embodiment, the first smooth surface 112a of the third surface 103 may include the end of the third surface 103 on the fifth surface 105 side, and the second smooth surface 112b of the fourth surface 104 may include the end of the fourth surface 104 on the fifth surface 105 side.

[0097] In this way, the first smooth surface 112a includes the end of the third surface 103 on the fifth surface 105 side, and the second smooth surface 112b includes the end of the fourth surface 104 on the fifth surface 105 side, thereby improving the appearance quality of the fifth surface 105.

[0098] In the submount 100 according to this embodiment, the substrate 110 may have a first notch 113a located at the portion where the second surface 102 and the third surface 103 are adjacent, and a second notch 113b located at the portion where the second surface 102 and the fourth surface 104 are adjacent.

[0099] This makes it possible, for example, to guide the molten solder to each of these notches when forming solder film 116 on first surface 101 and melting solder film 116. This prevents the molten solder from spilling onto second surface 102. Furthermore, by forming each notch at a specific location on submount 100, it becomes easier to identify each surface of submount 100.

[0100] In the submount 100 according to this embodiment, the first cutout portion 113a may have a concave surface 114a including a curved surface 115a, and the second cutout portion 113b may have a concave surface 114b including a curved surface 115b.

[0101] As a result, for example, when the singulation step S22 is used to manufacture the submount 100, stress is concentrated at a specific position of each cutout portion when the base material 10 is stretched, which makes it possible to prevent the base material 10 from being divided at each cutout portion. Therefore, since the base material 10 can be divided at a position along each modified region, the positional accuracy of the third surface 103 and the fourth surface 104 formed by the division and the flatness of the third surface 103 and the fourth surface 104 can be improved.

[0102] The submount 100 according to this embodiment may include a solder film 116 disposed on the first surface 101 .

[0103] By disposing the solder film 116 on the first surface 101 in this manner, an element such as a semiconductor laser chip can be bonded to the submount 100 using the solder film 116 .

[0104] The submount 100 according to this embodiment may include a second metal film 122 disposed on the second surface 102. The second metal film 122 is an example of a metal film formed on the second surface 102.

[0105] This allows the submount 100 to be mounted on a mounting substrate or the like using the second metal film 122.

[0106] [1-4. Semiconductor laser device] An overview of a semiconductor laser device according to this embodiment will be described with reference to Fig. 13. Fig. 13 is a side view showing an overview of a semiconductor laser device 151 according to this embodiment. As shown in Fig. 13, the semiconductor laser device 151 according to this embodiment includes a submount 100 and a semiconductor laser chip 152 bonded onto a first surface 101 of the submount 100.

[0107] The semiconductor laser chip 152 is an example of an element mounted on the first surface 101 of the submount 100. The semiconductor laser chip 152 is a known semiconductor laser chip containing, for example, GaAs or a nitride semiconductor. The semiconductor laser chip 152 has an electrode 156. The electrode 156 is bonded to the solder film 116 of the submount 100. An emission surface 153 of the semiconductor laser chip 152 (i.e., the surface that emits laser light) is disposed on the second surface 102 side of the submount 100.

[0108] Such a semiconductor laser device 151 includes the submount 100, and therefore has the same effects as the submount 100 described above.

[0109] [1-5. Semiconductor laser device manufacturing method] The semiconductor laser device manufacturing method according to this embodiment will be described with reference to Fig. 14 to Fig. 16. Fig. 14 is a flowchart showing the flow of the semiconductor laser device manufacturing method according to this embodiment. Fig. 15 and Fig. 16 are views for explaining the bonding step S32 of the semiconductor laser device manufacturing method according to this embodiment.

[0110] The semiconductor laser device 151 manufactured by the semiconductor laser device manufacturing method according to the present embodiment includes the submount 100 and the semiconductor laser chip 152, as described above.

[0111] In the semiconductor laser device manufacturing method according to this embodiment, as shown in FIG. 14, first, one or more submounts 100 are manufactured by the submount manufacturing method according to this embodiment described above (submount manufacturing step S30).

[0112] Next, a semiconductor laser chip 152 is bonded to the first surface 101 of each of the one or more submounts 100 (bonding step S32). As shown in FIG. 15 , in the bonding step S32, the submount 100 is placed on, for example, a heating stage 350. The fifth surface 105 of the submount 100 is in contact with the heating stage 350. By heating the heating stage 350, the solder film 116 of the submount 100 can be melted. Meanwhile, the semiconductor laser chip 152 is placed above the submount 100 while being held by a collet 311. Here, the electrode 156 of the semiconductor laser chip 152 is held in an orientation such that it faces the first surface 101 of the submount 100 and the emission surface 153 of the semiconductor laser chip 152 is parallel to the surface of the second metal film 122.

[0113] Next, using collet 311, semiconductor laser chip 152 is moved onto molten solder film 116 on submount 100 while maintaining the above-mentioned orientation. Next, with electrodes 156 of semiconductor laser chip 152 in contact with molten solder film 116, heating stage 350 is stopped to cool and solidify solder film 116. In this manner, semiconductor laser device 151 as shown in FIG. 16 is obtained.

[0114] According to the semiconductor laser device manufacturing method of this embodiment, the same effects as those of the submount manufacturing method of this embodiment can be achieved.

[0115] [1-6. Semiconductor laser device mounting method] The semiconductor laser device mounting method according to this embodiment will be described with reference to FIGS. 17 to 19. FIG. 17 is a flowchart showing the flow of the semiconductor laser device mounting method according to this embodiment. FIGS. 18 and 19 are each views for explaining the mounting step S42 of the semiconductor laser device mounting method according to this embodiment. FIG. 18 shows a side view of the semiconductor laser device 151 and other components seen from a direction perpendicular to the first surface 101 of the submount 100 in the mounting step S42. FIG. 19 shows a side view of the semiconductor laser device 151 and other components seen from a direction perpendicular to the fourth surface 104 of the submount 100 in the mounting step S42.

[0116] The semiconductor laser device mounting method according to this embodiment is a method for mounting a semiconductor laser device 151 on a base. First, as shown in Fig. 17, the semiconductor laser device 151 is manufactured by the semiconductor laser device manufacturing method according to this embodiment (semiconductor laser device manufacturing step S40).

[0117] Next, the semiconductor laser device 151 is mounted on a base (mounting step S42). In this embodiment, as shown in Figures 18 and 19, the semiconductor laser device 151 is mounted on a slider 602 of a thermally assisted hard disk drive, which is an example of a base. Figures 18 and 19 show side views of the slider 602 immediately before the semiconductor laser device 151 is mounted thereon.

[0118] The slider 602 is a plate-like member for stabilizing the gap between a recording head (not shown) disposed on the slider 602 and a disk (not shown) that is a recording medium of the thermally assisted hard disk device. The slider 602 includes a near-field light generating element 614 (see FIG. 19) that guides laser light from the semiconductor laser device 151 to generate near-field light.

[0119] In a thermally assisted hard disk device, the magnetic material contained in the disk is heated by irradiating the disk with laser light emitted from the semiconductor laser device 151. This makes it possible to assist recording on the magnetic material.

[0120] As shown in FIG. 19, the semiconductor laser device 151 is mounted on the slider 602 so that the emission surface 153 of the semiconductor laser chip 152 faces the near-field light generating element 614 provided on the slider 602 .

[0121] A metal film 612 and a solder film 613 are disposed on the mounting surface of the slider 602 on which the semiconductor laser device 151 is mounted. The solder film 613 is disposed on the metal film 612. As the metal film 612, for example, a metal film similar to the first metal film 121 of the submount 100 can be used.

[0122] In the mounting step S42, the slider 602 is heated by the above-mentioned heating stage 350 or the like, thereby melting the solder film 613.

[0123] Meanwhile, in the mounting step S42, the semiconductor laser device 151 is moved in a state in which the substrate 110 of the submount 100 is held by the holding member 620 at the third surface 103 and the fourth surface 104. As the holding member 620, for example, a robot arm or the like can be used.

[0124] The semiconductor laser device 151 is placed above the slider 602 while being held by the holding member 620. Here, the mounting surface of the semiconductor laser device 151 is the second surface 102 of the submount 100. Therefore, the semiconductor laser device 151 can be mounted on the slider 602 on the second surface 102, which has a small surface roughness, and therefore the bonding strength between the semiconductor laser device 151 and the slider 602 can be increased.

[0125] The second metal film 122 arranged on the second surface 102 of the submount 100 faces the solder film 613 formed on the slider 602, and is held in an orientation such that the emission surface 153 of the semiconductor laser chip 152 is parallel to the top surface of the near-field light generating element 614.

[0126] Next, using the gripping member 620, the semiconductor laser device 151 is moved onto the molten solder film 613 while maintaining the above-mentioned posture. Next, with the second metal film 122 of the semiconductor laser device 151 in contact with the molten solder film 613, the heating of the slider 602 is stopped to cool and solidify the solder film 613. This allows the semiconductor laser device 151 to be mounted on the slider 602, which is an example of a base.

[0127] According to the semiconductor laser device mounting method of this embodiment, the same effects as those of the submount manufacturing method described above can be achieved.

[0128] Other effects of the semiconductor laser device mounting method according to this embodiment will be described with reference to FIGS. 20 and 21 , in comparison with a semiconductor laser device mounting method according to a comparative example. FIG. 20 is a diagram showing a state in which a submount 1100 according to the comparative example is held by a holding member 620. FIG. 20 shows plan views (a) and (b), respectively, of the first surface 101 and the third surface 1103 of the submount 1100 manufactured by the submount manufacturing method according to the comparative example described above. FIG. 21 is a diagram showing a state in which a submount 100 according to this embodiment is held by a holding member 620. FIG. 21 shows plan views (a) and (b), respectively, of the first surface 101 and the third surface 103 of the submount 100 when viewed from above.

[0129] 20(a), the first smooth surface 1112a of the third surface 1103 of the submount 1100 of the comparative example protrudes from the first rough surface 1111a in a direction perpendicular to the third surface 1103. Also, as shown in the plan view of FIG. 20(b), the first smooth surface 1112a includes the entire end of the third surface 1103 on the sixth surface 1106 side. Therefore, in the comparative example, as shown in the plan view of FIG. 20(a), the gripping member 620 disposed at a position facing the center of the end of the third surface 1103 on the sixth surface 1106 side comes into contact with the third surface 1103 at the first smooth surface 1112a of the third surface 1103.

[0130] Therefore, gripping member 620 contacts first smooth surface 1112a of third surface 1103 only in a portion of the area of gripping member 620 facing third surface 1103, and does not contact the center of third surface 1103. Although not shown in FIG. 20 , gripping member 620 contacts second smooth surface 1112a of fourth surface 1104 only in a portion of the area of gripping member 620 facing fourth surface 1104, and does not contact the center of fourth surface 1104.

[0131] As described above, in the comparative example, the contact area between the gripping member 620 and the submount 1100 is small, and the gripping member 620 does not come into contact with the central portions of the third surface 1103 and the fourth surface 1104 of the submount 1100, so the submount 1100 cannot be gripped stably.

[0132] In contrast, in this embodiment, as shown in the plan view (a) of FIG. 21 , the first smooth surface 112a of the third surface 103 protrudes from the first rough surface 111a in a direction perpendicular to the third surface 103. In this embodiment, the first smooth surface 112a includes only the end portion of the third surface 103 on the sixth surface 106 side that faces the fifth surface 105. Therefore, as shown in the plan view (a) of FIG. 21 , the gripping member 620 disposed at a position facing the center of the end portion of the third surface 1103 on the sixth surface 1106 side comes into contact with the third surface 103 at the first rough surface 111a of the third surface 103. Therefore, the gripping member 620 comes into contact with the first rough surface 111a of the third surface 103 over the entire area of the gripping member 620 facing the third surface 103.

[0133] Although not shown in FIG. 21, gripping member 620 is in contact with second rough surface 111b of fourth surface 104 over the entire area of gripping member 620 facing fourth surface 104.

[0134] As described above, in this embodiment, the contact area between the gripping member 620 and the submount 100 can be increased compared to the comparative example, and therefore the submount 100 can be stably gripped.

[0135] (Embodiment 2) A submount manufacturing method according to embodiment 2 will be described. The submount manufacturing method according to this embodiment differs from the submount manufacturing method according to embodiment 1 in that a dummy region that is not used as a submount 100 is provided in base material 10 at a position facing sixth face 106 of each of one or more submounts 100. The submount manufacturing method according to this embodiment will be described below with reference to FIGS. 22 to 24, focusing on the differences from the submount manufacturing method according to embodiment 1.

[0136] Fig. 22 is a flowchart showing the flow of a submount manufacturing method according to this embodiment. Fig. 23 is a plan view showing the configuration of a penetrating portion 712 formed in base material 10 according to this embodiment. Fig. 24 is an enlarged view of the inside of dashed frame XXIV shown in Fig. 23.

[0137] 22, the submount manufacturing method according to this embodiment also performs the preparation step S10, the first metal film forming step S12, and the solder film forming step S14, as in the submount manufacturing method according to embodiment 1. Note that the respective formation positions of first metal film 121 and solder film 116 according to this embodiment are different from the respective formation positions in the submount manufacturing method according to embodiment 1 (see FIG. 24).

[0138] Next, one or more through holes 712 (see FIG. 23) are formed that penetrate between the first main surface 10a and the second main surface 10b of the base material 10 (through hole forming step S116). The through holes 712 formed by the through hole forming step S116 according to this embodiment will be described with reference to FIGS. 23 and 24. Note that FIG. 24 shows the base material 10 on which a second metal film 122 has been formed by the second metal film forming step S18, which is the step following the through hole forming step S116.

[0139] 23 and 24, the inner surface of the through portion 712 according to the present embodiment includes the second surface 102, similar to the inner surface of the through portion 12 according to embodiment 1. In the present embodiment, as shown in FIG. 24, a dummy region 720 that is not used as the submount 100 is present between the region of the base material 10 that corresponds to the sixth surface 106 of the submount 100 and the through portion 712. In other words, a part of the inner surface of the through portion 712 corresponds to the surface of the dummy region 720.

[0140] Subsequently, the second metal film forming step S18 and the modifying step S20 are performed, similarly to the submount manufacturing method according to the first embodiment. Each of the third surface modified region 213 and the fourth surface modified region 214 formed in the modifying step S20 according to the present embodiment may be formed continuously up to the dummy region 720, as shown in FIG. 24 . This allows the lengths of the third surface modified region 213 and the fourth surface modified region 214 to be longer than the lengths of the third surface 103 and the fourth surface 104 in a plan view of the first main surface 10a of the base material 10. This therefore increases the accuracy of the formation positions of the third surface modified region 213 and the fourth surface modified region 214.

[0141] Subsequently, the singulation step S22 is carried out in the same manner as in the submount manufacturing method according to embodiment 1. As a result, one or more submounts 100 can be manufactured.

[0142] In the submount manufacturing method according to the present embodiment, as in the submount manufacturing method according to embodiment 1, the third-surface modified region 213 and the fourth-surface modified region 214 are connected to the sixth-surface modified region 216, which reduces the formation of burrs or chipping at the ends of the third surface 103 and the fourth surface 104 on the sixth surface 106 side. Furthermore, in the singulation step S22, processing defects such as the inability to separate the third surface 103 and the fourth surface 104 can be reduced.

[0143] Furthermore, as described above, it is possible to improve the accuracy of the positions at which the third-surface modified regions 213 and the fourth-surface modified regions 214 are formed. Therefore, even small submounts can be manufactured while reducing shape defects.

[0144] (Variations, etc.) Although the submount manufacturing method according to the present disclosure has been described above based on the embodiments, the present disclosure is not limited to the above-described embodiments.

[0145] For example, in each of the above embodiments, the through portion is formed by dry etching, but it may be formed by other methods.

[0146] Furthermore, in each of the above embodiments, each cutout portion of the submount 100 has a curved surface, but each cutout portion does not have to have a curved surface.

[0147] Furthermore, in each of the above embodiments, each notch is formed in the submount 100, but each notch does not have to be formed.

[0148] Furthermore, in the submount manufacturing methods according to the above embodiments, first metal film 121, second metal film 122, and solder film 116 are formed, but these films do not necessarily have to be formed.

[0149] This disclosure also includes forms obtained by applying various modifications to the embodiments that a person skilled in the art would conceive, and forms realized by arbitrarily combining the components and functions in each embodiment within the scope of the present disclosure.

[0150] For example, the submount manufacturing method according to the second embodiment may be used in the semiconductor laser device manufacturing method and semiconductor laser device mounting method according to the first embodiment. [Industrial Applicability]

[0151] The submount manufacturing method and the like according to the present disclosure are particularly applicable to the manufacture of submounts used in semiconductor laser devices, thermally assisted hard disk drives, and the like. [Explanation of symbols]

[0152] 10 Base material 10a First principal surface 10b Second principal surface 12, 712, 1012 penetrations 13, 1013 recess 100, 1100 submount 100a First submount 100b Second submount 101 Front page 102 Second side 103, 1103 Third side 104, 1104 Fourth side 105 Fifth page 106, 1106 Sixth side 110, 1110 board 111a, 1111a First rough surface 111b Second rough surface 111c Third rough surface 112a, 1112a First smooth surface 112b Second smooth surface 112c Third smooth surface 112c1 First side smooth surface 112c2 Fifth side smooth surface 113a First notch 113b Second notch 114a, 114b concave 115a, 115b curved surface 116, 613 Solder film 117 Metal film removal section 121 First metal film 122 Second metal film 151 Semiconductor laser device 152 Semiconductor laser chip 153 Exit Surface 156 Electrode 213, 1213 Third surface modification area 214, 1214 Fourth surface modification area 216 Modification area for sixth surface 311 Colette 350 Heating Stage 602 Slider 612 Metal Film 614 Near-field light generating element 620 Gripping member 720 Dummy Area 1100x Bali

Claims

1. 1. A submount manufacturing method for manufacturing one or more submounts, comprising: each of the one or more submounts has a substrate; The substrate is The front page and a second surface perpendicular to the first surface; a third surface perpendicular to the first surface and the second surface; a fourth surface opposite to the third surface; a fifth surface opposite to the first surface; a sixth surface facing the second surface, The submount manufacturing method includes: a preparation step of preparing a plate-shaped base material including the substrate and having a first main surface and a second main surface opposite to the first main surface; a through-portion forming step of forming one or more through-portions that penetrate between the first main surface and the second main surface of the base material; a modifying step of modifying the inside of the base material by irradiating the base material with laser light; a singulation step of singulating the one or more submounts; the first main surface includes the first surface, the second main surface includes the fifth surface, an inner surface of the one or more penetrations includes the second surface; In the modification step, regions corresponding to the third surface, the fourth surface, and the sixth surface are modified to form a modified region for a third surface, a modified region for a fourth surface, and a modified region for a sixth surface, respectively; the third surface modified region and the sixth surface modified region are connected to each other, the fourth-surface modified region and the sixth-surface modified region are connected to each other, The third surface modified region and the fourth surface modified region are each spaced apart from the one or more through-holes. Submount manufacturing method.

2. the one or more submounts include a first submount and a second submount; In the base material, a region corresponding to the first submount and a region corresponding to the second submount are disposed adjacent to each other, In the modification step, the sixth-surface modified region is formed in a region between the region corresponding to the first submount and the region corresponding to the second submount. The method for manufacturing a submount according to claim 1 .

3. In a plan view of the first main surface, The third-surface modified region formed in the region corresponding to the third surface of the first submount and the fourth-surface modified region formed in the region corresponding to the fourth surface of the second submount are connected at the sixth-surface modified region. The method for manufacturing a submount according to claim 2 .

4. In the through-portion forming step, the one or more through-portions are formed by dry etching. The method for manufacturing a submount according to any one of claims 1 to 3.

5. In the through-portion forming step, a first notch portion is formed in a portion where the second surface and the third surface are adjacent to each other, and a second notch portion is formed in a portion where the second surface and the fourth surface are adjacent to each other. The method for manufacturing a submount according to any one of claims 1 to 4.

6. Each of the first cutout portion and the second cutout portion has a concave surface including a curved surface. The method for manufacturing a submount according to claim 5 .

7. The method further includes a solder film forming step of forming a solder film on the first main surface. The method for manufacturing a submount according to any one of claims 1 to 6.

8. a metal film forming step of forming a metal film on the second surface. The method for manufacturing a submount according to any one of claims 1 to 7.

9. A semiconductor laser device manufacturing method, comprising: The semiconductor laser device manufactured by the semiconductor laser device manufacturing method includes a submount and a semiconductor laser chip, The semiconductor laser device manufacturing method includes: a submount manufacturing step of manufacturing the one or more submounts by the submount manufacturing method according to any one of claims 1 to 8; and bonding a semiconductor laser chip to the first surface of each of the one or more submounts. A method for manufacturing a semiconductor laser device.

10. A semiconductor laser device mounting method, comprising: a semiconductor laser device manufacturing process for manufacturing the semiconductor laser device by the semiconductor laser device manufacturing method according to claim 9; and a mounting step of mounting the semiconductor laser device on a base. Semiconductor laser device mounting method.

11. In the mounting step, the semiconductor laser device is moved while the substrate is held by holding members at the third surface and the fourth surface.

11. The semiconductor laser device mounting method according to claim 10.

12. a substrate; The substrate is The front page and a second surface perpendicular to the first surface; a third surface perpendicular to the first surface and the second surface; a fourth surface opposite to the third surface; a fifth surface opposite to the first surface; a sixth surface facing the second surface, the surface roughness of the third surface, the fourth surface, and the sixth surface is greater than the surface roughness of the second surface; the third surface has a first smooth surface and a first rough surface having a surface roughness greater than that of the first smooth surface, the fourth surface has a second smooth surface and a second rough surface having a surface roughness greater than that of the second smooth surface, the first smooth surface includes an end of the third surface on the second surface side, the second smooth surface includes an end of the fourth surface on the second surface side, the first rough surface extends at least from a center of the third surface to an end on the sixth surface side, The second rough surface extends at least from the center of the fourth surface to an end on the sixth surface side. Submount.

13. the sixth surface has a third smooth surface and a third rough surface having a surface roughness greater than that of the third smooth surface, the third rough surface extends from an end of the sixth surface on the third surface side to an end of the sixth surface on the fourth surface side. The submount of claim 12.

14. the first smooth surface includes an end of the third surface on the fifth surface side, the second smooth surface includes an end of the fourth surface on the fifth surface side 14. The submount according to claim 12 or 13.

15. The substrate is a first cutout portion disposed in a portion where the second surface and the third surface are adjacent to each other; a second cutout portion disposed at a portion where the second surface and the fourth surface are adjacent to each other; The submount according to any one of claims 12 to 14.

16. Each of the first cutout portion and the second cutout portion has a concave surface including a curved surface.

16. The submount of claim 15.

17. a solder film disposed on the first surface; The submount according to any one of claims 12 to 16.

18. a metal film disposed on the second surface; The submount according to any one of claims 12 to 17.

19. A submount according to any one of claims 12 to 18; a semiconductor laser chip bonded to the first surface of the submount; Semiconductor laser device.

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