Substrate processing apparatus, substrate processing method, and storage medium

Abstract

To efficiently treat a substrate with ozone water.SOLUTION: A substrate processing apparatus includes a processing vessel, an ozone water supply unit, an ozone water discharge unit, and a pressurizing unit. The processing vessel provides a processing space that can accommodate a substrate and is sealed during substrate processing. The ozone water supply unit supplies ozone water to the processing space. The ozone water discharge unit discharges ozone water from the processing space. The pressurizing unit pressurizes the ozone water upstream of the ozone water supply unit.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a storage medium. [Background technology]

[0002] BACKGROUND ART Conventionally, a technique for treating a substrate such as a semiconductor wafer (hereinafter also referred to as a wafer) with ozone water has been known (see Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-190445 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that allows substrates to be efficiently treated with ozone water. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a processing vessel, an ozone water supply unit, an ozone water discharge unit, and a pressurizing unit. The processing vessel provides a processing space capable of accommodating a substrate and being sealed during processing of the substrate. The ozone water supply unit supplies ozone water to the processing space. The ozone water discharge unit discharges ozone water from the processing space. The pressurizing unit pressurizes the ozone water upstream of the ozone water supply unit. [Effects of the Invention]

[0006] According to the present disclosure, substrates can be efficiently treated with ozone water. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to an embodiment. [Figure 2] FIG. 2 is a schematic diagram showing a piping configuration of the substrate processing system according to the embodiment. [Figure 3] FIG. 3 is a schematic diagram illustrating an example of the configuration of the first processing unit according to the embodiment. [Figure 4] FIG. 4 is a view showing a state in which the processing container of the first processing unit according to the embodiment is separated. [Figure 5] FIG. 5 is a schematic diagram showing an example of the configuration of the second processing unit according to the embodiment. [Figure 6] FIG. 6 is a flowchart showing the procedure of substrate processing executed by the substrate processing system according to the embodiment. [Figure 7] FIG. 7 is a flowchart showing the procedure of the ozone water treatment executed by the substrate processing system according to the embodiment. [Figure 8] FIG. 8 is a flowchart showing the procedure of the rinsing process executed by the substrate processing system according to the embodiment. [Figure 9] FIG. 9 is a schematic diagram showing a piping configuration of a substrate processing system according to a modified example of the embodiment. [Figure 10] FIG. 10 is a schematic diagram showing a configuration example of a first processing unit according to a modified example of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments (hereinafter referred to as "embodiments") for carrying out a substrate processing apparatus, a substrate processing method, and a storage medium according to the present disclosure will be described in detail with reference to the drawings. Note that the present disclosure is not limited to these embodiments. It should be noted that the drawings are schematic, and the dimensional relationships and ratios of elements may differ from reality. Furthermore, the drawings may include portions in which the dimensional relationships and ratios differ from one another.

[0009] A technique for treating substrates such as semiconductor wafers (hereinafter also referred to as wafers) with ozone water is known. However, the above-mentioned conventional technique leaves room for further improvement in terms of efficiently treating substrates with ozone water.

[0010] Therefore, there is a need for a technology that can overcome the above-mentioned problems and efficiently treat substrates with ozone water.

[0011] <Outline of the substrate processing system> First, a schematic configuration of a substrate processing system 1 according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram showing a schematic configuration of the substrate processing system 1 according to an embodiment. The substrate processing system 1 is an example of a substrate processing apparatus. In the following, to clarify the positional relationship, an X-axis, a Y-axis, and a Z-axis that are orthogonal to each other are defined, and the positive direction of the Z-axis is defined as the vertically upward direction.

[0012] 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0013] The carry-in / out station 2 includes a FOUP placement section 11 and a transport section 12. On the FOUP placement section 11, a plurality of FOUPs C are placed, each accommodating a plurality of substrates, in this embodiment, semiconductor wafers W (hereinafter referred to as wafers W), in a horizontal position.

[0014] The transfer section 12 is provided adjacent to the FOUP placement section 11 and includes a substrate transfer device 13 and a transfer section 14. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 13 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the FOUP C and the transfer section 14 using the wafer holding mechanism.

[0015] The processing station 3 is provided adjacent to the transport section 12. The processing station 3 includes a transport section 15, a plurality of first processing units 16, and a plurality of second processing units 17. The plurality of first processing units 16 are provided side by side on one side of the transport section 15 (here, the positive Y-axis direction side). The plurality of second processing units 17 are provided side by side on the other side of the transport section 15 (here, the negative Y-axis direction side).

[0016] The transfer section 15 includes a substrate transfer device 18 therein. The substrate transfer device 18 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 18 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the delivery section 14, the first processing unit 16, and the second processing unit 17 using the wafer holding mechanism.

[0017] The first processing unit 16 performs a given substrate processing on the wafer W transferred by the substrate transfer device 18. The first processing unit 16 will be described in detail later.

[0018] The second processing unit 17 performs a given substrate processing on the wafer W transferred by the substrate transfer device 18. The second processing unit 17 will be described in detail later.

[0019] The substrate processing system 1 also includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 19 and a storage unit 20. The storage unit 20 stores programs that control various processes executed in the substrate processing system 1. The control unit 19 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 20.

[0020] Such a program may be recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 20 of the control device 4. Examples of computer-readable storage media include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0021] The substrate processing system 1 further includes an ozone water generator 5. The ozone water generator 5 generates ozone water having a given ozone concentration and supplies the generated ozone water to the first processing unit 16. Details of the ozone water generator 5 will be described later.

[0022] In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 in the loading / unloading station 2 removes the wafer W from the FOUP C placed on the FOUP placement section 11 and places the removed wafer W on the transfer section 14. The wafer W placed on the transfer section 14 is then removed from the transfer section 14 by the substrate transfer device 18 in the processing station 3 and carried into the first processing unit 16.

[0023] The wafer W loaded into the first processing unit 16 is processed by the first processing unit 16, and then is unloaded from the first processing unit 16 by the substrate transfer device 18 and loaded into the second processing unit 17.

[0024] The wafer W carried into the second processing unit 17 is processed by the second processing unit 17, and then carried out of the second processing unit 17 by the substrate transfer device 18 and placed on the transfer section 14. Then, the processed wafer W placed on the transfer section 14 is returned to the FOUP C of the FOUP placement section 11 by the substrate transfer device 13.

[0025] <Piping configuration of substrate processing system> Next, the piping configuration of the substrate processing system 1 will be described with reference to Fig. 2. Fig. 2 is a schematic diagram showing the piping configuration of the substrate processing system 1 according to the embodiment.

[0026] 2 shows an example in which six processing regions X are arranged, each including one first processing unit 16. For ease of understanding, the piping configurations in the processing regions X other than the processing region X shown in the lower left are omitted from the illustration.

[0027] As shown in FIG. 2, the substrate processing system 1 according to the embodiment includes an ozone water generator 5 and a plurality of first processing units 16.

[0028] The ozone water generating unit 5 generates ozone water having a given ozone concentration. This "given ozone concentration" is, for example, an ozone concentration that can remove (peel off) a resist film formed on a wafer W (see FIG. 1), and is, for example, in the range of 0 mg / L to 1500 mg / L.

[0029] The substrate processing system 1 according to the embodiment also includes a processing liquid supply path 21 extending from the ozone water generator 5 to the plurality of first processing units 16. The processing liquid supply path 21 connects the DIW supply source 22a and the first processing units 16.

[0030] The processing liquid supply path 21 is configured by connecting a first supply path 22, a tank 23, a second supply path 24, and a third supply path 60 in this order.

[0031] The first supply path 22 supplies DIW (DeIonized Water), which is a raw material for ozone water, to the tank 23. The first supply path 22 has, in order from the upstream side, a DIW supply source 22a, a degassing module 22b, a cooler 22c, a valve 22d, a constant pressure valve 22e, and a flow meter 22f.

[0032] The DIW supply source 22a is, for example, a tank that stores DIW. The degassing module 22b removes dissolved gases such as nitrogen dissolved in the DIW supplied from the DIW supply source 22a. By removing the dissolved gases contained in the DIW using the degassing module 22b, ozone gas can be efficiently dissolved in the DIW.

[0033] The cooler 22c cools the DIW flowing through the first supply path 22 to a given temperature (for example, 5°C to 20°C). By cooling the DIW with the cooler 22c, it is possible to efficiently dissolve ozone gas in the DIW.

[0034] The constant pressure valve 22e adjusts the flow rate of the DIW supplied to the tank 23 based on the flow rate of the DIW measured by the flow meter 22f. That is, the constant pressure valve 22e performs feedback control based on the flow rate of the DIW measured by the flow meter 22f.

[0035] A junction 27 is provided downstream of the flow meter 22f in the first supply path 22. The junction 27 is connected to an acid-based chemical liquid supply unit .

[0036] The acid-based chemical supply unit 26 supplies an acid-based chemical such as an organic acid (citric acid, acetic acid, etc.), hydrochloric acid, sulfuric acid, or nitric acid to the first supply path 22 of the processing liquid supply path 21. By supplying an acid-based chemical to the DIW to adjust the pH of the DIW to an acidic state, the concentration of ozone dissolved in the DIW can be increased. The acid-based chemical supply unit 26 may also supply a gas such as carbon dioxide that adjusts the pH of the DIW to an acidic state.

[0037] The acid-based chemical supply unit 26 includes, in order from the upstream side of the acid-based chemical supply path 26a, an acid-based chemical supply source 26b, a valve 26c, a constant pressure valve 26d, and a flow meter 26e. The acid-based chemical supply source 26b is, for example, a cabinet or a circulation line capable of generating an acid-based chemical.

[0038] The constant pressure valve 26d adjusts the flow rate of the acid-based chemical liquid supplied to the first supply path 22 based on the flow rate of the acid-based chemical liquid measured by the flow meter 26e. That is, the constant pressure valve 26d performs feedback control based on the flow rate of the acid-based chemical liquid measured by the flow meter 26e.

[0039] A filter 28 and a concentration meter 29 are provided downstream of the junction 27 in the first supply path 22. The filter 28 removes contaminants such as particles contained in the DIW flowing through the first supply path 22 and the acid-based chemical solution flowing through the acid-based chemical solution supply path 26a. The concentration meter 29 measures the pH of the DIW flowing through the first supply path 22.

[0040] The DIW, whose pH has been adjusted by mixing with the acid-based chemical solution at the confluence 27, is stored in the tank 23. A second supply path 24 is connected to the bottom of the tank 23.

[0041] The tank 23 is also connected to the drain section DR via a valve 31. This allows the control section 19 (see FIG. 1) to control the valve 31 to discharge the DIW in the tank 23 to the drain section DR, for example, when replacing the DIW in the tank 23. The exhaust gas in the tank 23 is also connected to the ozone gas removal section 46 via an exhaust line 201. The exhaust line 201 has a valve 202 and a check valve 203. The ozone gas removal section 46 neutralizes the ozone gas and discharges the neutralized ozone gas to the outside from the exhaust section EXH.

[0042] The second supply path 24 is provided between the tank 23 and the plurality of branching portions 50, and includes, in order from the upstream side, a mixing portion 32, a pump 33, a filter 34, a flow meter 35, a concentration meter 36, a pressure gauge 37, and a valve 38. The pump 33 is an example of a pressurizing portion. An ozone gas supply path 39 is connected to the mixing portion 32.

[0043] The ozone gas supply path 39 supplies ozone gas to the mixing section 32. The ozone gas supply path 39 has an ozone gas generator 40, a filter 41, a valve 42, and a check valve 43 in this order from the upstream side.

[0044] The ozone gas generator 40 generates ozone gas from oxygen gas using known technology. Oxygen gas, which is a raw material for ozone gas, is supplied to the ozone gas generator 40 from an oxygen gas supply unit 44. The oxygen gas supply unit 44 has, in this order from the upstream side of an oxygen gas supply path 44a, an oxygen gas supply source 44b, a constant pressure valve 44c, and a valve 44d. The oxygen gas supply source 44b is, for example, a tank that stores oxygen gas.

[0045] Although not shown in FIG. 2, the ozone gas generating unit 40 is connected to a cooling water supply unit that supplies cooling water and a cooling water discharge unit that discharges used cooling water.

[0046] The filter 41 removes contaminants such as particles contained in the ozone gas flowing through the ozone gas supply path 39. The check valve 43 prevents the ozone gas from flowing back from the mixing section 32.

[0047] Moreover, the ozone water generation unit 5 according to the embodiment is connected to an ozone gas removal unit 46 via a valve 45. The ozone gas removal unit 46 neutralizes ozone gas and discharges the neutralized ozone gas to the outside from the exhaust unit EXH.

[0048] As a result, when the control unit 19 is unable to generate ozone gas of sufficient quality, such as when the ozone gas generation unit 40 is starting up, the control unit 19 can open the valve 45, thereby making it possible to neutralize the ozone gas of insufficient quality in the ozone gas removal unit 46.

[0049] Therefore, according to the embodiment, only ozone gas of sufficient quality can be supplied to the mixing section 32, and therefore ozone water of good quality can be produced.

[0050] The mixing unit 32 dissolves ozone in the pH-adjusted DIW by mixing ozone gas supplied from the ozone gas supply line 39 into the DIW flowing through the second supply line 24. The mixing unit 32 can dissolve ozone in the pH-adjusted DIW by, for example, a bubbling method using a bubbler with fine holes or an ejector method in which ozone gas is blown into a high-speed water flow.

[0051] The mixing unit 32 according to the embodiment is not limited to a device that dissolves ozone in DIW by a bubbling method or an ejector method, and may mix ozone gas into DIW by, for example, a membrane dissolution method using a permeable membrane.

[0052] The pump 33 pressurizes the mixture of DIW and ozone dissolved therein to a pressure higher than atmospheric pressure. By pressurizing the mixture of DIW and ozone dissolved therein in this manner, ozone water having a given ozone concentration can be efficiently produced.

[0053] This is because the molar fraction M of ozone gas dissolved in the raw material liquid DIW is estimated to follow Henry's law shown in the following equation (1), which states that the molar fraction M of dissolved ozone gas is proportional to the partial pressure P of ozone in the gas. M=H -1 ·P ···(1) H: Henry's constant

[0054] Furthermore, in the embodiment, by pressurizing the ozone water in the second supply passage 24 with the pump 33, the ozone water can be supplied to the plurality of first treatment units 16 evenly.

[0055] The filter 34 removes contaminants such as particles contained in the ozone water flowing through the second supply path 24. A vent line is connected to the filter 34 to vent gas mixed in the ozone water and return the gas to the tank 23, but this vent line is not shown in the figure.

[0056] The concentration meter 36 measures the ozone concentration of the ozonated water flowing through the second supply path 24. The control unit 19 adjusts the ozone concentration of the ozonated water generated in the ozonated water generation unit 5 based on the ozone concentration of the ozonated water measured by the concentration meter 36.

[0057] For example, when the ozone concentration of the ozone water measured by the concentration meter 36 is lower than a given ozone concentration, the control unit 19 increases the flow rate of the acid-based chemical liquid supplied from the acid-based chemical liquid supply unit 26. This decreases the pH of the DIW supplied from the first supply path 22, thereby increasing the ozone concentration of the ozone water generated in the ozone water generation unit 5.

[0058] In addition, the control unit 19 may increase at least one of the flow rate and concentration of the ozone gas supplied from the ozone gas supply path 39 when the ozone concentration of the ozone water measured by the concentration meter 36 is lower than a given ozone concentration.

[0059] This increases the amount of ozone molecules mixed in the mixing section 32, and therefore the ozone concentration of the ozone water generated in the ozone water generating section 5 can be increased.

[0060] On the other hand, when the ozone concentration of the ozone water measured by the concentration meter 36 is higher than a given ozone concentration, the control unit 19 reduces the flow rate of the acid-based chemical liquid supplied from the acid-based chemical liquid supply unit 26.

[0061] As a result, the pH of the DIW supplied from the first supply path 22 increases, and the ozone concentration of the ozone water generated in the ozone water generator 5 can be reduced.

[0062] Furthermore, the control unit 19 may reduce at least one of the flow rate and concentration of the ozone gas supplied from the ozone gas supply path 39 when the ozone concentration of the ozone water measured by the concentration meter 36 is higher than a given ozone concentration.

[0063] As a result, the amount of ozone molecules mixed in the mixing section 32 decreases, and the ozone concentration of the ozone water generated in the ozone water generating section 5 can be reduced.

[0064] As described above, in the embodiment, the ozone concentration of the ozone water generated in the ozone water generator 5 is feedback-controlled based on the ozone concentration of the ozone water measured by the concentration meter 36. This allows ozone water of a given ozone concentration to be stably supplied to the first treatment unit 16.

[0065] The pressure gauge 37 measures the pressure (hereinafter referred to as "supply pressure") of the ozone water flowing through the second supply path 24. Based on the supply pressure of the ozone water measured by the pressure gauge 37, the control unit 19 adjusts the driving pressure of the pump 33 when the pump 33 pressurizes the ozone water.

[0066] The second supply path 24 branches into parallel paths downstream of the valve 38. A third supply path 60 further branches from a branch point 50 provided on the parallel branched second supply path 24, and the third supply path 60 is connected to the first processing unit 16.

[0067] In the example of FIG. 2, the second supply path 24 branches into three parallel paths, and the branched second supply paths 24 supply ozone water to two first processing units 16, respectively.

[0068] The third supply path 60 has, in order from the upstream side, a constant pressure valve 61, a flow meter 62, and a valve 63. The constant pressure valve 61 adjusts the flow rate of the ozone water flowing through the third supply path 60 based on the flow rate of the ozone water measured by the flow meter 62. In other words, the constant pressure valve 61 performs feedback control based on the flow rate of the ozone water measured by the flow meter 62.

[0069] A connection part 64 is provided on the third supply path 60 downstream of the valve 63. The connection part 64 is connected to the rinse liquid supply path 7. The rinse liquid supply path 7 supplies DIW to the first processing unit 16 via the connection part 64 and the third supply path 60 downstream of the connection part 64.

[0070] The rinse liquid supply path 7 includes, in order from the upstream side, a DIW supply source 7a, a valve 7b, and a flow meter 7d. The DIW supply source 7a is, for example, a tank that stores DIW. The DIW stored in the DIW supply source 7a is an example of a rinse liquid.

[0071] Based on the flow rate of DIW measured by the flow meter 7d, the constant pressure valve 7c adjusts the flow rate of DIW flowing through the rinse liquid supply path 7. That is, the constant pressure valve 7c performs feedback control based on the flow rate of DIW measured by the flow meter 7d.

[0072] In addition, the first processing unit 16 is connected to the drain portion DR via a first discharge path 65 and a second discharge path 66. This allows the processing liquid used in processing the wafer W in the first processing unit 16 to be discharged to the drain portion DR.

[0073] The ozone water used for processing the wafer W in the first processing unit 16 flows through each of the first discharge path 65 and the second discharge path 66. The first discharge path 65 and the second discharge path 66 have different diameters. That is, the second discharge path 66 has a smaller diameter than the first discharge path 65. Therefore, the ozone water flows through the second discharge path 66 at a flow rate smaller than the flow rate of the ozone water flowing through the first discharge path 65.

[0074] The first discharge path 65 has, in order from the upstream side, a valve 65a and a switching unit 65b, and is connected to the drain portion DR. The second discharge path 66 has, in order from the upstream side, a valve 66a and a switching unit 66b, and is connected to the drain portion DR.

[0075] The switching unit 65b and the switching unit 66b are connected to the recovery tank 68 via the recovery path 67. The switching unit 65b switches the destination of the ozone water flowing through the first discharge path 65 between the drain unit DR and the recovery path 67. The switching unit 66b switches the destination of the ozone water flowing through the second discharge path 66 between the drain unit DR and the recovery path 67. The recovery tank 68 temporarily stores the ozone water flowing in from the recovery path 67, i.e., used ozone water.

[0076] Furthermore, the recovery tank 68 is connected via a valve 69 to the second supply path 24 on the upstream side of the mixing section 32. This allows the used ozone water to be returned immediately before the mixing section 32, and therefore, according to the embodiment, the used ozone water can be reused to generate more ozone water, thereby enabling the ozone water generation section 5 to efficiently generate ozone water. Note that the exhaust gas from the recovery tank 68 may be connected to the ozone gas removal section 46 via an exhaust line (not shown) provided with a valve (not shown), a check valve (not shown), and the like.

[0077] As described above, in the embodiment, after ozone gas is mixed into DIW in the mixing unit 32 to generate ozone water, the ozone water is pressurized to a pressure higher than atmospheric pressure by the pump 33. This makes it possible to efficiently generate high-concentration ozone water. Therefore, according to the embodiment, the wafer W can be efficiently processed with ozone water.

[0078] In the substrate processing system 1 according to this embodiment, the plurality of second supply paths 24 are connected to the tank 23 of the ozone water generator 5 via the circulation path 70.

[0079] This allows the ozone water that was not used in the first treatment unit 16 to be returned to the ozone water generation section 5 via the circulation path 70. Therefore, according to the embodiment, unused ozone water can be utilized to generate additional ozone water, allowing the ozone water generation section 5 to generate ozone water efficiently.

[0080] The circulation path 70 is provided with a valve 72 and a back pressure valve 73 in this order from the upstream side.

[0081] <Configuration of the first processing unit> Next, the configuration of the first processing unit 16 will be described with reference to Fig. 3 and Fig. 4. Fig. 3 is a schematic diagram showing an example of the configuration of the first processing unit 16 according to the embodiment. Fig. 4 is a diagram showing a state in which the processing vessel 80 of the first processing unit 16 according to the embodiment is separated.

[0082] 3 and 4, the first processing unit 16 includes a processing container 80, a liquid supply unit 90, a liquid discharge unit 100, and a collection cup 110. The liquid supply unit 90 is an example of an ozone water supply unit and a rinse liquid supply unit. The liquid discharge unit 100 is an example of an ozone water discharge unit.

[0083] The processing vessel 80 is configured to be separable into a first vessel member 80a and a second vessel member 80b. The first vessel member 80a includes a mounting portion 81, a support portion 82, a lifting mechanism 83, a heater 84, lift pins 85, and a sealing member 86.

[0084] The mounting portion 81 has a substantially circular plate shape and horizontally mounts the wafer W. A bank portion 81a is provided in the region of the mounting portion 81 where the wafer W is mounted. The bank portion 81a is arranged to rise from the periphery of the region of the mounting portion 81 where the wafer W is mounted, and contacts the edge of the wafer W to fix the position of the wafer W.

[0085] The support column 82 is a member extending in the vertical direction, and its base end is supported by the lifting mechanism 83 so as to be vertically movable, and its tip end horizontally supports the placement section 81. The lifting mechanism 83 moves the support column 82 in the vertical direction.

[0086] In the first container member 80a, the support column 82 is moved in the vertical direction using the lifting mechanism 83, thereby moving the placement section 81 supported by the support column 82 in the vertical direction.

[0087] The heater 84 is a planar heater provided inside the mounting portion 81, and heats the wafer W accommodated in the processing space S of the second container member 80b to a given temperature.

[0088] The lift pins 85 are arranged to penetrate the mounting portion 81 and are configured to be movable up and down by a lifting mechanism (not shown).

[0089] The lift pins 85 support the wafer W when the wafer W is placed on the placement portion 81 (see FIG. 4). For example, three lift pins 85 are provided on the placement portion 81, and are arranged at intervals of 120 degrees in the circumferential direction.

[0090] The sealing member 86 is arranged to stand along the entire periphery of the mounting portion 81. When the second container member 80b abuts against the mounting portion 81, the sealing member 86 is pressed against the second container member 80b to seal the processing space S of the second container member 80b. As the sealing member 86, for example, a metal gasket or the like can be used.

[0091] The second container member 80b has a ceiling portion 87 facing the mounting portion 81 and a sidewall portion 88 extending downward from the ceiling portion 87. The second container member 80b has a substantially cylindrical portion in which an opening is formed at the bottom by the ceiling portion 87 and the sidewall portion 88 and a processing space S is formed inside.

[0092] The second container member 80b is connected to an elevation mechanism 89. The elevation mechanism 89 moves the second container member 80b in the vertical direction.

[0093] In the processing vessel 80 described above, when loading and unloading a wafer W, the loading portion 81 and the second vessel member 80b can be moved by the lifting mechanisms 83, 89 to separate the loading portion 81 and the second vessel member 80b from each other, as shown in Fig. 4. When the loading portion 81 and the second vessel member 80b are separated from each other, the opening of the second vessel member 80b is opened, and the wafer W is transferred between the lift pins 85 and the substrate transfer device 18 through the gap between the loading portion 81 and the second vessel member 80b.

[0094] On the other hand, in the processing vessel 80, when processing the wafer W, the lifting mechanisms 83, 89 move the mounting part 81 and the second container member 80b, and the second container member 80b is brought into contact with the mounting part 81, as shown in Fig. 3, thereby closing the opening of the second container member 80b. As a result, in the processing vessel 80, the processing space S of the second container member 80b is sealed.

[0095] The liquid supply unit 90 is disposed on the ceiling portion 87 of the second container member 80b, and supplies ozone water and a rinse liquid to the processing space S. The liquid supply unit 90 includes a cover member 91 that covers the wafer W placed on the placement portion 81, and a supply pipe 92 provided in the cover member 91.

[0096] The supply pipe 92 is connected to the third supply path 60 of the processing liquid supply path 21. A supply port 92a of the supply pipe 92 is provided at a position on the cover member 91 corresponding to the center of the wafer W. The supply pipe 92 supplies ozone water from the supply port 92a toward the center of the wafer W. As a result, a flow of ozone water is formed in the gap between the cover member 91 and the wafer W, along the bottom surface of the cover member 91, from the center of the wafer W toward the outer periphery of the wafer W.

[0097] The supply pipe 92 is connected to the rinse liquid supply path 7 via the downstream side of the connection part 64 in the third supply path 60 and the connection part 64. The supply pipe 92 supplies DIW, which is a rinse liquid, from a supply port 92a toward the center of the wafer W. The DIW supplied from the supply pipe 92 is used for rinsing the wafer W.

[0098] The liquid discharge unit 100 is disposed on the ceiling portion 87 of the second container member 80b, and is connected to the first discharge path 65 and the second discharge path 66. The liquid discharge unit 100 discharges the ozone water and the rinse liquid, which are supplied from the liquid supply unit 90 to the processing space S and have passed through the processing space S, from the processing container 80 to the first discharge path 65 and the second discharge path 66.

[0099] The collection cup 110 is disposed so as to surround the mounting portion 81, and collects the processing liquid that flows down from the gap between the mounting portion 81 and the second container member 80b due to the separation between the mounting portion 81 and the second container member 80b. A drain port (not shown) is formed at the bottom of the collection cup 110, and the processing liquid collected by the collection cup 110 is discharged from the drain port to the outside of the first processing unit 16.

[0100] When processing a wafer W in the first processing unit 16 described above, first, the wafer W is placed on the mounting portion 81 of the first container member 80a. Next, the lifting mechanisms 83, 89 move the mounting portion 81 and the second container member 80b so as to close the opening of the second container member 80b. This seals the processing space S of the second container member 80b.

[0101] Next, the liquid supply unit 90 supplies ozone water to the sealed processing space S, filling the processing space S with ozone water.

[0102] Here, in the embodiment, with the processing space S filled with ozone water, the ozone water is pressurized by the pump 33 (see FIG. 2) upstream of the liquid supply unit 90 to increase the supply pressure of the ozone water to the processing space S. This allows the ozone water inside the processing space S to be pressurized to a pressure higher than atmospheric pressure, for example, and therefore prevents the ozone concentration of the ozone water around the wafer W from decreasing due to a drop in the pressure of the ozone water inside the processing space S.

[0103] That is, in the embodiment, the concentration of the ozone water around the wafer W can be maintained by pressurizing the ozone water inside the processing space S.

[0104] Therefore, according to the embodiment, the wafer W can be efficiently processed with ozone water.

[0105] Furthermore, in the embodiment, the wafer W is covered with a cover member 91 of the liquid supply unit 90, and ozone water is supplied toward the wafer W from a supply pipe 92 provided in the cover member 91. This allows the gap between the wafer W and the cover member 91 to be filled with fresh, undeactivated ozone water, thereby enabling the wafer W to be processed more efficiently with ozone water.

[0106] Furthermore, in the embodiment, the supply pipe 92 supplies ozone water toward the center of the wafer W from a supply port 92a provided in the cover member 91 at a position corresponding to the center of the wafer W. As a result, a flow of ozone water is formed in the gap between the cover member 91 and the wafer W, along the bottom surface of the cover member 91, from the center of the wafer W toward the outer periphery of the wafer W, and this flow of ozone water removes air bubbles from the gap between the cover member 91 and the wafer W.

[0107] Therefore, according to the embodiment, it is possible to suppress a decrease in the processing performance of the wafer W caused by bubbles in the ozone water.

[0108] <Configuration of the second processing unit> Next, the configuration of second processing unit 17 will be described with reference to Fig. 5. Fig. 5 is a schematic diagram showing an example configuration of second processing unit 17 according to an embodiment. As shown in Fig. 5, second processing unit 17 includes a chamber 120, a substrate holding mechanism 130, a liquid supply part 140, and a collection cup 150.

[0109] The chamber 120 accommodates a substrate holding mechanism 130, a liquid supply unit 140, and a collection cup 150. An FFU 121 is provided on the ceiling of the chamber 120. The FFU 121 forms a downflow within the chamber 120.

[0110] The substrate holding mechanism 130 includes a holding part 131, a support part 132, and a drive part 133. The holding part 131 holds the wafer W horizontally. The support part 132 is a member extending in the vertical direction, and its base end is rotatably supported by the drive part 133, with its tip end supporting the holding part 131 horizontally. The drive part 133 rotates the support part 132 around a vertical axis.

[0111] The substrate holding mechanism 130 rotates the support column 132 using the drive unit 133, thereby rotating the holder 131 supported by the support column 132, and thereby rotating the wafer W held by the holder 131.

[0112] The liquid supply unit 140 supplies various processing liquids to the wafer W held by the substrate holding mechanism 130. The liquid supply unit 140 is connected to a cleaning liquid supply source 142a via a valve 141a. The cleaning liquid supplied from the cleaning liquid supply source 142a is a liquid used in cleaning the wafer W. The cleaning liquid is, for example, SC-1 (aqueous solution containing ammonia and hydrogen peroxide).

[0113] The liquid supply unit 140 is connected to a rinse liquid supply source 142b via a valve 141b. The rinse liquid supplied from the rinse liquid supply source 142b is a liquid used in rinsing the wafer W, such as DIW.

[0114] The collection cup 150 is disposed to surround the holder 131, and collects the processing liquid scattered from the wafer W by the rotation of the holder 131. A drainage port 151 is formed in the bottom of the collection cup 150, and the processing liquid collected by the collection cup 150 is discharged from the drainage port 151 to the outside of the second processing unit 17. In addition, an exhaust port 152 is formed in the bottom of the collection cup 150, which discharges the gas supplied from the FFU 121 to the outside of the second processing unit 17.

[0115] <Substrate processing procedure> Next, a substrate processing procedure according to the embodiment will be described with reference to Fig. 6 and Fig. 7. Fig. 6 is a flowchart showing the substrate processing procedure executed by the substrate processing system 1 according to the embodiment. In the substrate processing system 1 according to the embodiment, the processes of steps S102 to S103 shown in Fig. 6 are performed in the first processing unit 16. In the substrate processing system 1, the processes of steps S105 to S108 shown in Fig. 6 are performed in the second processing unit 17.

[0116] First, the control unit 19 controls the substrate transfer devices 13, 18, etc. to load the wafer W into the first processing unit 16 (step S101). In the process of loading the wafer W into the first processing unit 16, first, the wafer W is placed on the mounting portion 81 of the first container member 80a. Next, the lifting mechanisms 83, 89 move the mounting portion 81 and the second container member 80b so as to close the opening of the second container member 80b. This seals the processing space S of the second container member 80b.

[0117] Next, the control unit 19 controls the first processing unit 16 and the like to perform an ozone water treatment for treating the wafer W with ozone water (step S102). The ozone water treatment will be described in detail later.

[0118] Next, the control unit 19 controls the first processing unit 16 and the like to perform a rinse process on the wafer W with a rinse liquid such as DIW (step S103). The details of this rinse process will be described later.

[0119] Next, the control unit 19 controls the substrate transfer device 18 and the like to unload the wafer W from the first processing unit 16 (step S104), and load the unloaded wafer W into the second processing unit 17 (step S105).

[0120] Next, the control unit 19 controls the liquid supply unit 140 provided in the second processing unit 17 to perform a cleaning process on the wafer W using a cleaning liquid such as SC-1 (aqueous solution containing ammonia and hydrogen peroxide) (step S106). Then, the control unit 19 controls the liquid supply unit 140 provided in the second processing unit 17 to perform a rinsing process on the wafer W using a rinsing liquid such as DIW (step S107). Then, the control unit 19 controls the second processing unit 17 to perform a drying process (e.g., spin drying) on the wafer W (step S108).

[0121] Next, the control unit 19 controls the substrate transfer devices 13, 18, etc. to unload the wafer W from the second processing unit 17 (step S109), and returns the unloaded wafer W to the FOUP C. This completes the series of processes for the wafer W.

[0122] 7 is a flowchart showing the procedure of the ozone water treatment executed by the substrate processing system according to the embodiment, which corresponds to step S102 in FIG.

[0123] First, the control unit 19 controls the first processing unit 16 and the like to supply ozone water from the liquid supply unit 90 to the sealed processing space S, filling the processing space S with ozone water (step S111). At this time, the supply flow rate of the ozone water to the processing space S can be, for example, about 2 L / min to 5 L / min. The supply pressure of the ozone water to the processing space S can be, for example, about 200 kPa. The ozone concentration of the ozone water supplied to the processing space S can be, for example, about 0 mg / L to 150 mg / L.

[0124] In the processing of step S111, the control unit 19 controls the valve 65a of the first discharge path 65 and the valve 66a of the second discharge path 66 to be open until the processing space S is filled with ozone water supplied from the liquid supply unit 90. Then, the control unit 19 causes the ozone water to flow through the first discharge path 65 and the second discharge path 66. This increases the flow rate of the ozone water discharged from the processing space S to the first discharge path 65 and the second discharge path 66, allowing air bubbles and the like contained in the ozone water in the processing space S to be quickly removed to the outside of the processing space S.

[0125] Then, when the processing space S is filled with ozone water, the control unit 19 controls the pump 33 to pressurize the ozone water filling the processing space S, thereby increasing the supply pressure of the ozone water to the processing space S (step S112). At this time, the supply flow rate of the ozone water to the processing space S can be, for example, about 0.1 L / min. The supply pressure of the ozone water to the processing space S can be, for example, about 1 MPa to 2 MPa. The ozone concentration of the ozone water supplied to the processing space S can be, for example, about 100 mg / L to 1500 mg / L.

[0126] In the embodiment, the control unit 19 may pressurize the ozone water in the processing space S to a pressure higher than atmospheric pressure, for example. This makes it possible to prevent the ozone concentration of the ozone water around the wafer W from decreasing due to a decrease in the pressure of the ozone water in the processing space S.

[0127] That is, in the embodiment, by pressurizing the ozone water inside the processing space S, the concentration of the ozone water around the wafer W can be maintained, and therefore the wafer W can be efficiently processed with the ozone water.

[0128] In the process of step S112, when increasing the supply pressure of the ozone water to the processing space S, the control unit 19 controls the valve 65a of the first discharge path 65 from an open state to a closed state, and maintains the valve 66a of the second discharge path 66 in an open state. The control unit 19 then causes the ozone water to flow only through the second discharge path 66. This reduces the flow rate of the ozone water discharged from the processing space S only through the second discharge path 66, thereby maintaining the pressure of the ozone water inside the processing space S at a high pressure, making it difficult for the ozone in the ozone water to be decomposed. Therefore, according to the embodiment, the wafer W can be efficiently processed with high-concentration ozone water.

[0129] Next, the control unit 19 controls the heater 84 to heat the wafer W to a given temperature (step S113). This allows the ozone water treatment of the wafer W to be performed in a high-temperature environment, thereby improving the treatment performance of the wafer W with ozone water. Note that the control unit 19 may heat the wafer W with the heater 84 at least when increasing the supply pressure of the ozone water to the treatment space S.

[0130] Then, after a given ozone water treatment time has elapsed, the control unit 19 controls the pump 33 to reduce the pressure of the ozone water filling the treatment space S (step S114). At this time, the supply pressure of the ozone water to the treatment space S can be, for example, about 200 kPa. Furthermore, the supply flow rate of the ozone water to the treatment space S can be, for example, about 2 L / min to 5 L / min.

[0131] Then, the control unit 19 stops the heater 84 to stop heating the wafer W (step S115), and ends a series of processes related to the ozone water treatment.

[0132] 8 is a flowchart showing the procedure of the rinsing process executed by the substrate processing system 1 according to the embodiment. The rinsing process shown in FIG. 8 corresponds to step S103 in FIG.

[0133] After the ozone water treatment is completed, the control unit 19 controls the first treatment unit 16 and the like to supply DIW, which is a rinse liquid, from the liquid supply unit 90 to the sealed treatment space S, replacing the ozone water filling the treatment space S with the DIW (step S121). At this time, the supply flow rate of the DIW to the treatment space S can be set to, for example, about 2 L / min to 5 L / min. The supply pressure of the DIW to the treatment space S can be set to, for example, about 200 kPa.

[0134] In the process of step S121, the control unit 19 controls the valve 65a of the first discharge path 65 and the valve 66a of the second discharge path 66 to be open until the ozone water filling the processing space S is replaced with DIW. Then, the control unit 19 causes DIW to flow into the first discharge path 65 and the second discharge path 66. This increases the flow rate of DIW discharged from the processing space S to the first discharge path 65 and the second discharge path 66, thereby speeding up the replacement with DIW.

[0135] Next, the control unit 19 controls the first processing unit 16 and the like to cause the DIW supplied from the liquid supply unit 90 to the processing space S to be poured onto the wafer W (step S122).

[0136] Specifically, the control unit 19 reduces the flow rate of the DIW supplied from the liquid supply unit 90 to the processing space S. As a result, the supplied DIW remains on the upper surface of the wafer W due to surface tension, and the DIW is piled up on the upper surface of the wafer W, forming a layer of DIW (a so-called puddle).

[0137] In step S104, the wafer W having the DIW liquid puddle formed thereon by the processes up to this point is transferred from the processing container 80 of the first processing unit 16 by the substrate transfer device 18. This makes it possible to prevent the wafer W from drying out during transfer.

[0138] <Modification> Next, a modified example of the embodiment will be described with reference to Figures 9 and 10. Figure 9 is a schematic diagram showing a piping configuration of a substrate processing system 1 according to a modified example of the embodiment.

[0139] 9, the substrate processing system 1 according to the modification differs from the embodiment in the piping configuration of the third supply path 60. Specifically, a branch path 8 branches off from a branch point 51 provided upstream of a constant pressure valve 61 in the third supply path, and the branch path 8 is connected to a first processing unit 16.

[0140] Branch path 8 has, in order from the upstream side, a constant pressure valve 8a, a flow meter 8b, and a valve 8c. Based on the flow rate of the ozone water measured by flow meter 8b, constant pressure valve 8a adjusts the flow rate of the ozone water flowing through branch path 8. In other words, constant pressure valve 8a performs feedback control based on the flow rate of the ozone water measured by flow meter 8b.

[0141] 10 is a schematic diagram showing an example of the configuration of a first processing unit 16 according to a modified example of the embodiment. As shown in FIG. 10, the first processing unit 16 according to the modified example differs from the embodiment in the structure of the liquid supply unit 90. Specifically, the liquid supply unit 90 further includes a plurality of additional supply ports 93 and a reservoir 94.

[0142] The multiple other supply ports 93 are provided on the outer periphery side of the supply pipe 92 of the cover member 91. The multiple other supply ports 93 supply ozone water toward the outer periphery of the wafer W on the outer periphery side of the supply pipe 92 of the cover member 91. The multiple other supply ports 93 supply ozone water stored in the storage section 94 toward the outer periphery of the wafer W. The outer periphery side means the outer side in the radial direction of the wafer W.

[0143] The reservoir 94 is provided on the outer circumferential side of the cover member 91 relative to the supply pipe 92. The reservoir 94 is connected to the branch path 8 and stores the ozone water supplied from the branch path 8. The reservoir 94 supplies the ozone water to a plurality of other supply ports 93.

[0144] In this manner, in the modified example, a plurality of separate supply ports 93 provided on the outer periphery side of the supply pipe 92 of the cover member 91 supply ozone water toward the outer periphery of the wafer W. This allows fresh, undeactivated ozone water to be supplied not only to the central portion of the wafer W but also to the outer periphery of the wafer W. Therefore, according to the modified example, the wafer W can be processed with ozone water more efficiently.

[0145] <Other variations> In the above embodiment, the liquid discharge unit 100 is connected to the first discharge path 65 and the second discharge path 66, but the liquid discharge unit 100 may be connected to a single discharge path through which the ozone water discharged from the processing space S flows. In addition, a flow rate adjustment valve may be provided in the discharge path.

[0146] Then, in the process of step S111 (see FIG. 7) described above, the control unit 19 may control the flow rate adjustment valve to increase the discharge flow rate of the ozone water to the discharge path until the processing space S is filled with the ozone water supplied from the liquid supply unit 90. This increases the flow rate of the ozone water discharged from the processing space S to the discharge path, thereby enabling bubbles and the like contained in the ozone water in the processing space S to be quickly removed to the outside of the processing space S.

[0147] Furthermore, in the process of step S112 (see FIG. 7) described above, when increasing the supply pressure of ozone water to the processing space S, the control unit 19 may control the flow rate adjustment valve to reduce the discharge flow rate of ozone water to the exhaust path. This reduces the flow rate of ozone water discharged from the processing space S to the exhaust path, thereby maintaining a high pressure of the ozone water inside the processing space S and making it difficult for the ozone in the ozone water to be decomposed. As a result, the wafer W can be efficiently processed with high-concentration ozone water.

[0148] As described above, the substrate processing apparatus according to the embodiment (for example, substrate processing system 1) includes a processing container (for example, processing container 80), an ozone water supply unit (for example, liquid supply unit 90), an ozone water discharge unit (for example, liquid discharge unit 100), and a pressurizing unit (for example, pump 33). The processing container provides a processing space (for example, processing space S) that can accommodate a substrate (for example, wafer W) and is sealed during substrate processing. The ozone water supply unit supplies ozone water to the processing space. The ozone water discharge unit discharges ozone water from the processing space. The pressurizing unit pressurizes the ozone water upstream of the ozone water supply unit. This allows substrates to be processed efficiently with ozone water.

[0149] The processing vessel may include a mounting portion (for example, mounting portion 81) on which a substrate to be accommodated in the processing space is mounted. The ozone water supply unit may include a cover member (for example, cover member 91) that covers the substrate mounted on the mounting portion, and a supply pipe (for example, supply pipe 92) that is attached to the cover member and supplies ozone water toward the substrate. This allows the substrate to be processed with ozone water more efficiently.

[0150] The supply pipe may supply ozone water toward the center of the substrate from a supply port (for example, supply port 92a) provided in the cover member at a position corresponding to the center of the substrate, thereby suppressing a decrease in processing performance of the wafer W due to bubbles in the ozone water.

[0151] The ozone water supply unit may further include a plurality of other supply ports (for example, other supply ports 93) that are provided on the outer periphery of the substrate and supply ozone water toward the outer periphery of the substrate, thereby enabling more efficient processing of the substrate with ozone water.

[0152] The substrate processing apparatus according to the embodiment may include a control unit (for example, control unit 19). The control unit may supply ozone water from the ozone water supply unit to the processing space to fill the processing space with ozone water when the substrate is accommodated in the processing space and the processing space is sealed. When the processing space is filled with ozone water, the control unit may pressurize the ozone water using a pressurizer upstream of the ozone water supply unit to increase the supply pressure of the ozone water to the processing space. This allows the substrate to be processed efficiently with ozone water.

[0153] The ozone water discharge unit may be connected to a first discharge path (for example, first discharge path 65) through which ozone water discharged from the processing space flows, and a second discharge path (for example, second discharge path 66) through which ozone water flows at a flow rate lower than the flow rate of ozone water flowing through the first discharge path. The control unit may cause ozone water to flow through the first discharge path and the second discharge path until the processing space is filled with ozone water supplied from the ozone water supply unit. When the control unit increases the supply pressure of ozone water to the processing space when the processing space is filled with ozone water, the control unit may cause ozone water to flow only through the second discharge path. This allows substrates to be processed more efficiently with ozone water.

[0154] The ozonated water discharge unit may be provided with a flow rate adjustment valve and connected to a discharge path through which ozonated water discharged from the processing space flows. The control unit may control the flow rate adjustment valve to increase the discharge flow rate of ozonated water to the discharge path until the processing space is filled with ozonated water supplied from the ozonated water supply unit. When the supply pressure of ozonated water to the processing space is increased while the processing space is filled with ozonated water, the control unit may control the flow rate adjustment valve to decrease the discharge flow rate of ozonated water to the discharge path. This allows substrates to be processed more efficiently with ozonated water.

[0155] The substrate processing apparatus according to the embodiment may include a rinse liquid supply unit (for example, liquid supply unit 90) that supplies a rinse liquid (for example, DIW) to the processing space, and a transport mechanism (for example, substrate transport device 18) that transports the substrate. After the processing of the substrate with ozone water in the processing space is completed, the control unit may replace the ozone water filling the processing space with the rinse liquid. The control unit may then puddle the rinse liquid on the substrate. The control unit may then control the transport mechanism to transport the substrate with the puddle of rinse liquid out of the processing vessel. This makes it possible to prevent the substrate from drying out during transport.

[0156] The substrate processing apparatus according to the embodiment may include a heater (e.g., heater 84) provided in the processing vessel to heat the substrate accommodated in the processing space. The control unit may heat the substrate with the heater at least when increasing the supply pressure of ozone water to the processing space. This allows the substrate to be processed more efficiently with ozone water.

[0157] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0158] 1. Substrate Processing System 5. Ozone water generation unit 7 Rinse liquid supply path 16 First Processing Unit 18 Substrate transport device 19 Control Unit 33 Pump 65 1st discharge channel 66 2nd discharge channel 80 Processing container 81 Placement section 84 Heater 90 Liquid supply section 91 Cover member 92 Supply pipe 92a Supply port 93 Alternate supply outlet 100 Liquid drain S Processing space W wafer

Claims

1. a processing vessel that can accommodate a substrate and provides a processing space that is sealed during processing of the substrate; an ozone water supply unit that supplies ozone water to the treatment space; an ozone water discharge unit that discharges the ozone water from the treatment space; a pressurizing unit that pressurizes the ozone water upstream of the ozone water supply unit; A substrate processing apparatus comprising:

2. The processing vessel comprises: a mounting portion for mounting the substrate accommodated in the processing space; Equipped with The ozone water supply unit is a cover member for covering the substrate placed on the placement section; a supply pipe provided on the cover member and supplying ozone water toward the substrate; Equipped with The substrate processing apparatus according to claim 1 .

3. The supply pipe is The ozone water is supplied toward the center of the substrate from a supply port provided in the cover member at a position corresponding to the center of the substrate. The substrate processing apparatus according to claim 2 .

4. The ozone water supply unit is a plurality of other supply ports provided on the cover member on the outer periphery side of the supply pipe, the supply ports supplying ozone water toward the outer periphery of the substrate; The substrate processing apparatus according to claim 3 .

5. A control unit is provided, The control unit With the substrate accommodated in the processing space and the processing space sealed, the ozone water is supplied from the ozone water supply unit to the processing space to fill the processing space with the ozone water; In a state where the processing space is filled with the ozone water, the ozone water is pressurized by the pressurizing unit upstream of the ozone water supply unit to increase the supply pressure of the ozone water to the processing space. The substrate processing apparatus according to claim 1 .

6. The ozone water discharge unit is the ozone water is discharged from the treatment space through a first discharge path, and the ozone water flows through a second discharge path at a flow rate smaller than that of the ozone water flowing through the first discharge path; The control unit The ozone water is allowed to flow through the first discharge path and the second discharge path until the treatment space is filled with the ozone water supplied from the ozone water supply unit; When the supply pressure of the ozone water to the processing space is increased in a state where the processing space is filled with the ozone water, the ozone water is caused to flow only through the second discharge path. The substrate processing apparatus according to claim 5 .

7. The ozone water discharge unit is a flow rate adjusting valve is provided, and the flow rate adjusting valve is connected to a discharge path through which the ozone water discharged from the treatment space flows; The control unit controlling the flow rate regulating valve to increase the discharge flow rate of the ozone water to the discharge path until the treatment space is filled with the ozone water supplied from the ozone water supply unit; When the supply pressure of the ozone water to the processing space is increased in a state where the processing space is filled with the ozone water, the flow rate regulating valve is controlled to reduce the discharge flow rate of the ozone water to the discharge path. The substrate processing apparatus according to claim 5 .

8. a rinse liquid supply unit that supplies a rinse liquid to the processing space; a transport mechanism for transporting the substrate; Equipped with The control unit After the processing of the substrate with the ozone water in the processing space is completed, the ozone water filling the processing space is replaced with the rinse liquid; Thereafter, the rinse liquid is poured onto the substrate, Thereafter, the transfer mechanism is controlled to transfer the substrate on which the rinse liquid is puddled out of the processing vessel. The substrate processing apparatus according to claim 5 .

9. a heater provided in the processing vessel for heating the substrate accommodated in the processing space; The control unit The substrate is heated by the heater at least when the supply pressure of the ozone water to the processing space is increased. The substrate processing apparatus according to claim 5 .

10. a substrate processing apparatus including a processing vessel that provides a processing space that can accommodate a substrate and is sealed during processing of the substrate, an ozone water supply unit that supplies ozone water to the processing space, an ozone water discharge unit that discharges the ozone water from the processing space, and a pressurizing unit that pressurizes the ozone water upstream of the ozone water supply unit, and a step of supplying the ozone water from the ozone water supply unit to the processing space while the substrate is accommodated in the processing space, thereby filling the processing space with the ozone water; a step of pressurizing the ozone water by the pressurizing unit upstream of the ozone water supply unit while the treatment space is filled with the ozone water, thereby increasing the supply pressure of the ozone water to the treatment space; A substrate processing method comprising:

11. The substrate processing apparatus includes: a heater provided in the processing vessel for heating the substrate accommodated in the processing space; The substrate is heated by the heater at least when the supply pressure of the ozone water to the processing space is increased. The substrate processing method according to claim 10.

12. a substrate processing apparatus including a processing vessel that provides a processing space that can accommodate a substrate and is sealed during processing of the substrate, an ozone water supply unit that supplies ozone water to the processing space, an ozone water discharge unit that discharges the ozone water from the processing space, and a pressurizing unit that pressurizes the ozone water upstream of the ozone water supply unit, supplying the ozone water from the ozone water supply unit to the processing space while the substrate is accommodated in the processing space, to fill the processing space with the ozone water; a step of pressurizing the ozone water by the pressurizing unit upstream of the ozone water supply unit while the treatment space is filled with the ozone water, thereby increasing the supply pressure of the ozone water to the treatment space; A computer-readable storage medium on which a program that causes a computer to realize the above is non-temporarily recorded.

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