Authenticity determination method, authenticity determination apparatus, device for authenticity determination, packaging material, packing material and packing body

Abstract

To provide a highly reliable authenticity determination method for semiconductor devices by using a memory array in which recorded information can be selectively and limitedly reconfigured, an authenticity determination apparatus, a device for authenticity determination, a packaging material, a packing material, and a packing body.SOLUTION: The authenticity determination method includes the steps of: acquiring first recorded information of a memory array at least before peeling off a peelable functional layer or a peelable first insulating layer of the memory array; peeling the peelable functional layer or the peelable first insulating layer from the memory array; acquiring second recorded information of the memory array after peeling off the peelable functional layer or the peelable first insulating layer; and determining authenticity of a semiconductor device at least based on the first recorded information and the second recorded information.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to an authenticity determining method, an authenticity determining apparatus, an authenticity determining device, a packaging material, a packaging material, and a package. [Background technology]

[0002] In recent years, wireless communication systems (i.e., RFID systems) using Radio Frequency Identification (RFID) technology have been developed as an item management system to replace barcodes and QR codes (registered trademark). RFID systems use a wireless transceiver called a reader / writer and an RFID tag on which item information (such as a unique ID) is recorded.

[0003] In this system, a reader / writer can read information stored in RFID tags wirelessly. Advantages of RFID over barcodes and QR codes, which are used in conventional item management methods, include the ability to read tags over long distances and read multiple tags at once. These advantages make item management more efficient than ever before, and the adoption of RFID systems is becoming more widespread. However, due to the high cost of RFID tags, RFID systems have currently only been adopted in industries that handle relatively high-priced items (such as clothing and jewelry).

[0004] Reducing the cost of RFID tags is crucial for the further spread of RFID systems. RFID tags are primarily composed of a tag IC and an antenna, and much of the cost is spent on manufacturing and mounting the tag IC. In light of these manufacturing and mounting costs, attempts to replace tag ICs with thin film transistor (TFT) circuits have recently been attracting attention. TFT technology makes it possible to mass-produce electronic circuits on large-area substrates such as polymers and inorganic ceramics, and is expected to reduce the manufacturing and mounting costs of RFID tags.

[0005] However, it has been difficult to realize flash memory using TFT technology. Flash memory is a memory that can be rewritten multiple times, like that used in conventional silicon ICs, and is important for enabling repeated rewriting of information such as a unique ID in a tag IC. In TFT technology, a memory array configuration called ROM (Read Only Memory) has been mainly used to record a unique ID in a tag IC, in which information is written during the manufacturing process. Specifically, information is written to the memory array by controlling the threshold values of the transistors that make up the memory array and by the presence or absence of connection vias and wiring that make up the memory array. For example, there are memory arrays using TFT technology such as the one below.

[0006] Patent Document 1 discloses a memory array in which the state of a memory cell is determined by the presence or absence of a semiconductor layer by forming the semiconductor itself selectively at a certain position through a coating process, and information is written therein.

[0007] Furthermore, Patent Document 2 discloses that it is possible to determine recording information for a memory array by selectively forming or disconnecting wiring in the memory array using inkjet technology or laser irradiation.

[0008] These memory array technologies use patterning processes (selective coating, inkjet technology, laser irradiation) that do not require masks in the manufacturing process to determine the state of the memory cells, which reduces the manufacturing cost of photomasks and makes them economically advantageous for mass-producing tags with different unique IDs. [Prior art documents] [Patent documents]

[0009] [Patent Document 1] Patent No. 6350757 [Patent Document 2] Japanese Patent Application Laid-Open No. 2005-203763 Summary of the Invention [Problem to be solved by the invention]

[0010] However, the conventional memory array configurations of Patent Documents 1 and 2 have problems with the confidentiality and integrity of recorded information.

[0011] In the above technologies, each memory cell was small enough (at least several hundred nm to several μm) that selective coating, inkjet technology, and laser irradiation could be applied. Therefore, the information recorded in the memory array was exposed to a state where it could be deciphered visually or with a microscope.

[0012] Furthermore, memory arrays using the above method must be distributed with information written in it, and if the memory state is deciphered during distribution, there is a possibility that it could be copied or tampered with. This is because the selective coating technology, inkjet technology, laser irradiation, etc. are special processes that make it difficult for users to write information, so it is necessary to write the information in advance.

[0013] As described above, the information recorded in memory arrays using conventional TFT technology has low confidentiality and integrity, making it difficult to determine the authenticity of semiconductor devices equipped with memory arrays, even if they are counterfeit products such as replicas or non-genuine products.

[0014] The present invention has been made in consideration of the above, and aims to provide a highly reliable authentication method, authentication apparatus, authentication device, packaging material, packaging material, and package using a memory array in which recorded information can be selectively and limitedly reconfigured. [Means for solving the problem]

[0015] In order to solve the above-mentioned problems and achieve the object, the authentication method of the present invention provides a semiconductor device including: [1] a substrate; and a memory array on the substrate, in which a plurality of memory cells are arranged, each memory cell including one or more elements having at least a first electrode and a second electrode, wherein at least one element of at least one memory cell in the memory array is selectively selected from the following (1) or (2): (1) an element having a functional layer in contact with both the first electrode and the second electrode, the functional layer being in a peelable state; (2) an element having a functional layer in contact with both the first electrode and the second electrode, and a first insulating layer in contact with the functional layer, the an element in which the first insulating layer is in a peelable state, the authenticity determination method including at least the steps of: acquiring first recorded information of the memory array before peeling off the peelable functional layer or the peelable first insulating layer; peeling off the peelable functional layer or the peelable first insulating layer from the memory array; acquiring second recorded information of the memory array after peeling off the peelable functional layer or the peelable first insulating layer; and determining the authenticity of the semiconductor device based on at least the first recorded information and the second recorded information.

[0016] Furthermore, the authenticity determination method according to the present invention is [2] an element according to the invention according to [1] above, wherein the first electrode is a source electrode, the second electrode is a drain electrode, and further comprises a third electrode as a gate electrode, and the functional layer is a semiconductor layer.

[0017] Furthermore, in the method for determining authenticity according to the present invention, [3] in the invention according to [1] above, the memory array has elements that satisfy (2) above.

[0018] Furthermore, the authenticity determination method according to the present invention is [4] the invention according to the above [2], wherein the conductivity type of the memory array changes due to peeling of the first insulating layer of the element in the memory array that satisfies (2).

[0019] Furthermore, the authenticity determination method according to the present invention is [5] an invention according to any one of the above [1] to [4], wherein the memory array has an element having a functional layer in the memory array which is a p-channel or n-channel transistor.

[0020] Furthermore, the authenticity determination method according to the present invention is [6] an invention according to any one of the above [1] to [4], wherein the memory array has a functional layer in the memory array that contains one or more semiconductor materials selected from organic semiconductor materials, carbon nanotubes, carbon nanocoils, fullerenes, graphene, and nanodiamonds.

[0021] Furthermore, the authenticity determination method according to the present invention is [7] the invention according to [6] above, wherein the memory array contains a functional layer in the memory array that contains a carbon nanotube composite in which a conjugated polymer is attached to at least a portion of the surface of the carbon nanotube.

[0022] Furthermore, the authenticity determination method according to the present invention is [8] the invention according to [6] above, wherein the memory array has an element that satisfies (2), and the first insulating layer of the element that satisfies (2) is a polymer containing an electron-accepting compound or an electron-donating compound.

[0023] Furthermore, the authenticity determination method according to the present invention, [9] in any one of the inventions [1] to [4] above, further includes a step of inputting information based on the recorded information of the memory array written during manufacture and information regarding the peelability of the functional layer or the first insulating layer of the memory array as advance information, wherein the advance information includes the advance recorded information written during manufacture of the memory array, position information on the memory array of the peelable functional layer or the peelable first insulating layer of the memory array, and position information of an element having the peelable functional layer or the peelable first insulating layer that is to be peeled, and the step of determining the authenticity of the semiconductor device determines the authenticity of the semiconductor device based on at least the advance information, the first recorded information, and the second recorded information.

[0024] In addition, the authenticity determination device of the present invention includes:

[10] a substrate; and a memory array formed by arranging a plurality of memory cells on the substrate, each memory cell having one or more elements having at least a first electrode and a second electrode; an information acquisition unit that reads recorded information based on the memory array of a semiconductor device; a memory unit that stores preliminary information regarding the memory array in the semiconductor device and the recorded information; and an information processing unit that determines the authenticity of the semiconductor device, wherein the information processing unit determines the authenticity of the semiconductor device based at least on the preliminary information, first recorded information based on the memory array before the peelable functional layer or the peelable first insulating layer in the memory array read by the information acquisition unit, and second recorded information based on the memory array after the peelable functional layer or the peelable first insulating layer in the memory array has been peeled off, read by the information acquisition unit.

[0025]

[11] The authenticity determining device according to the present invention is the invention according to

[10] above, further comprising a peeling unit that peels off the peelable functional layer or the peelable first insulating layer.

[0026]

[12] The authenticity determining device according to the present invention is an authenticity determining device comprising: a substrate; a semiconductor device including a memory array on the substrate, in which a plurality of memory cells are arranged, each memory cell comprising one or more elements having at least a first electrode and a second electrode; and a sheet material having at least an adhesive layer and the substrate, wherein at least one element of at least one memory cell in the memory array of the semiconductor device is selectively in the following condition (1) or (2): (1) the element is in contact with both the first electrode and the second electrode; (1) an element having a functional layer, the functional layer being in a peelable state; (2) an element having a functional layer in contact with both a first electrode and a second electrode and a first insulating layer in contact with the functional layer, the first insulating layer being in a peelable state; and (3) an element having a peelable functional layer or a peelable first insulating layer of at least one element of at least one memory cell present in the memory array, the peelable functional layer or the peelable first insulating layer being in contact with at least a portion of the adhesive layer of the sheet material.

[0027] Furthermore, the authenticity determining device of the present invention is an element

[13] in the invention according to

[12] above, wherein the first electrode is a source electrode, the second electrode is a drain electrode, and further comprises a third electrode as a gate electrode, and the functional layer is a semiconductor layer.

[0028] Furthermore, the authenticity determining device according to the present invention

[14] satisfies the following (3) when, in the invention according to

[12] or

[13] above, the adhesive strength between the peelable functional layer or peelable first insulating layer present in the memory array and a layer in contact with something other than the sheet material is a1, and the adhesive strength between the peelable functional layer or peelable first insulating layer and the sheet material is a2. a1 < a2 (3)

[0029]

[15] In the authenticity determining device according to the present invention, in the invention according to the above

[12] or

[13] , the adhesive layer of the sheet material has a patterned shape.

[0030] Furthermore, the authenticity determining device according to the present invention,

[16] in the invention according to

[12] or

[13] above, further comprises at least an antenna, and is capable of reading out the information recorded in the memory array by wireless communication.

[0031]

[17] In the authentication device according to the present invention, in the invention according to

[12] or

[13] above, the individual identification information of the authentication device is based on the information recorded in the memory array.

[0032] Furthermore, the packaging material according to the present invention

[18] is equipped with the authenticity determining device according to the invention according to

[12] or

[13] above.

[0033] Furthermore, the packaging material according to the present invention

[19] is equipped with the authenticity determining device according to the invention according to

[12] or

[13] above.

[0034] Furthermore, the package according to the present invention

[20] packages the contents using the packaging material in the invention according to

[19] above.

[0035] Furthermore, the package according to the present invention

[21] uses the packaging material in the invention according to

[18] above to package the package body or contents with the packaging material. [Effects of the Invention]

[0036] The present invention has the effect of making it possible to determine the authenticity of a semiconductor device with high reliability. [Brief explanation of the drawings]

[0037] [Figure 1] FIG. 1 is a schematic diagram of a memory array according to a first embodiment of the present invention. [Figure 2A] FIG. 2A is a bird's-eye view showing the configuration of one memory cell according to the first embodiment of the present invention. [Figure 2B] FIG. 2B is a cross-sectional view showing a cross section taken along section line 2-2' of the perspective view of FIG. 2A. [Figure 2C] FIG. 2C is a bird's-eye view showing the configuration of a memory cell according to the first embodiment of the present invention. [Figure 2D] FIG. 2D is a cross-sectional view showing a cross section taken along section line 2a-2a' of the perspective view of FIG. 2C. [Figure 2E] FIG. 2E is a bird's-eye view showing the configuration of a memory cell according to the first embodiment of the present invention. [Figure 2F] FIG. 2F is a cross-sectional view taken along section line 2b-2b' of the perspective view of FIG. 2E. [Figure 3] FIG. 3 is a flowchart showing one aspect of the authentication method according to the first embodiment of the present invention. [Figure 4] FIG. 4 is a flowchart of the authenticity determining method according to the first embodiment of the present invention when sequential determination is performed. [Figure 5]FIG. 5 is a block diagram showing the functional configuration of the authenticity determining device according to the first embodiment of the present invention. [Figure 6] FIG. 6 is a block diagram showing another functional configuration of the authenticity determining device according to the first embodiment of the present invention. [Figure 7] FIG. 7 is a diagram showing an authentication device according to the second embodiment of the present invention. [Figure 8A] FIG. 8A is a bird's-eye view showing a part of one mode of an authentication device according to the second embodiment of the present invention. [Figure 8B] FIG. 8B is a cross-sectional view showing a cross section taken along section line 8-8' of the perspective view of FIG. 8A. [Figure 9A] FIG. 9A is a schematic diagram of one mode of the authentication device according to the third embodiment of the present invention after rewriting. [Figure 9B] FIG. 9B is a cross-sectional view showing a cross section taken along section line 9-9' of the perspective view of FIG. 9A. [Figure 10A] FIG. 10A is a bird's-eye view showing a modified example of the authentication device according to the second embodiment of the present invention. [Figure 10B] FIG. 10B is a cross-sectional view of a portion of the bird's-eye view of FIG. 10A. [Figure 11A] FIG. 11A is a bird's-eye view of a modified example of the authentication device according to the second embodiment of the present invention. [Figure 11B] FIG. 11B is a bird's-eye view of a modified example of the authentication device according to the second embodiment of the present invention after rewriting. [Figure 11C] FIG. 11C is a cross-sectional view showing a cross section taken along section line 11-11' of the perspective view of FIG. 11A. [Figure 12] FIG. 12 is a diagram showing a packaging material according to the third embodiment of the present invention. [Figure 13] FIG. 13 is a diagram showing a packaging material according to the third embodiment of the present invention. [Figure 14] FIG. 14 is a diagram showing a package packaged with the packaging material according to the third embodiment of the present invention. [Figure 15]FIG. 15 is a diagram showing a package packaged with the packaging material according to the third embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0038] Hereinafter, embodiments for carrying out the present invention (hereinafter referred to as "embodiments") will be described with reference to the accompanying drawings. Note that the drawings are schematic. Furthermore, the present invention is not limited to the embodiments described below. In the following, unless otherwise noted, TFT means thin film transistor.

[0039] First, the memory array used in the authentication method, authentication apparatus, authentication device, packaging material, packaging material, and package of the present invention will be described.

[0040] The memory array used in the present invention is a memory array comprising a substrate and an array of memory cells on the substrate, each of the memory cells comprising one or more elements having at least a first electrode and a second electrode. Furthermore, at least one element of at least one memory cell in the memory array selectively satisfies the following (1) or (2): (1) An element having a functional layer in contact with both the first electrode and the second electrode, the functional layer being in a peelable state. (2) An element having a functional layer in contact with both the first electrode and the second electrode, and a first insulating layer in contact with the functional layer, the first insulating layer being in a peelable state.

[0041] Here, the term "separable state" in the present invention means that the target layer is not strongly bonded to the adjacent layers among the layers constituting the element (i.e., electrodes, semiconductor layers, other insulating layers, substrate, etc.) through the bonding forces of covalent bonds, ionic bonds, and metallic bonds, and can be peeled off by normal operation (without applying excessive force) without destroying the substrate and other memory cells. However, the above bonding strength is acceptable as long as the bond can be broken using the peeling method described below.

[0042] The memory cells that make up the memory array are each made up of an element having a first electrode and a second electrode, and the recording state is determined by the electrical characteristics of the element that the memory cell has.

[0043] Specific examples of elements including a functional layer include magnetoresistive memory, spin injection memory, ferroelectric memory, phase change memory, and resistance change memory when the element consists of only two electrodes, a first electrode and a second electrode. Here, the term "functional layer" as used herein refers to a layer whose electrical properties change under certain physicochemical conditions, thereby realizing a memory state. For example, the functional layer may be made of a semiconductor, ferroelectric material, or ferromagnetic material, and may be a single layer or multiple layers, or may be a layer that can only realize a memory state by being formed as a multiple layer.

[0044] Furthermore, if the functional layer is not included, the element can be in an open state with no component between the first electrode and the second electrode, or the element can be in a short-circuited state by short-circuiting the first electrode and the second electrode.

[0045] Furthermore, when a third electrode is included in addition to the first and second electrodes, a transistor-type element having the first electrode as a source electrode, the second electrode as a drain electrode, and the third electrode as a gate electrode can be used. An element configuration including three or more electrodes is also possible, and examples thereof include transistor-type elements (such as dual-gate transistors and floating-gate transistors) that include multiple source, gate, and drain electrodes.

[0046] By making the functional layers of these elements peelable, the electrical properties of the elements can be changed by peeling off the functional layers.

[0047] Furthermore, when a functional layer comes into contact with an insulating layer, the physicochemical conditions under which the functional layer is placed change depending on the type of insulating layer, which can affect its electrical properties. For example, contact with an insulating layer made of a charged polymer can change the energy level of the functional layer of a device, which can affect its electrical properties.

[0048] Furthermore, if the functional layer is in contact with an insulating layer made of a polymer containing a magnetic material, the electromagnetic field conditions of the functional layer can be changed, and as a result, the electrical properties of the functional layer can be changed. By using such an insulating layer as the first insulating layer and making it peelable, the electrical properties of the element can be changed.

[0049] In the following explanations of the authenticity determination method, authenticity determination apparatus, authenticity determination device, packaging material, packaging material and package, we will use as an example a case where a memory cell in a memory array is composed of a single element consisting of three electrodes, and the functional layer is a semiconductor layer.

[0050] (Embodiment 1) In the first embodiment, a memory array, a semiconductor device, and an authentication device used in the authentication method of the present invention will be described using examples, followed by a description of each step of the authentication method executed by the authentication device.

[0051] <Memory array configuration> 1 is a bird's-eye view that schematically illustrates a memory array 100 according to a first embodiment of the present invention. The memory array 100 shown in FIG. 1 includes a substrate 101 and a plurality of memory cells 110, 110a, and 110b selectively arranged in an array on the substrate 101. Each of the memory cells 110, 110a, and 110b is provided corresponding to an intersection of a plurality of word lines 102 and a plurality of bit lines 103. Each of the memory cells 110, 110a, and 110b is composed of one element having three electrodes.

[0052] <Memory cell configuration> Next, the configuration of one memory cell 110 will be described. Fig. 2A is a perspective view showing the configuration of one memory cell 110. Fig. 2B is a cross-sectional view showing a cross section taken along the cutting line 2-2' of the perspective view of Fig. 2A.

[0053] 2A and 2B is composed of an element 010 having a gate electrode 011, a source electrode 012, a drain electrode 013, a gate insulating layer 014, and a semiconductor layer 015. Here, the gate electrode 011 corresponds to the third electrode, the source electrode 012 corresponds to the first electrode, the drain electrode 013 corresponds to the second electrode, and the semiconductor layer 015 corresponds to the functional layer.

[0054] The semiconductor layer 015 may or may not be present to determine the recording state of the memory cell 110. Hereinafter, an element having a semiconductor layer is a so-called TFT, and an element having a semiconductor layer will also be referred to as a TFT. In addition, the element 010 may also include layers other than the components of the element 010 described above.

[0055] The recorded state of a memory cell in memory array 110 is determined by the electrical characteristics of the element when a constant voltage is applied to the gate electrode relative to the source electrode of the element (hereinafter, the voltage applied to the gate electrode is referred to as the gate voltage). Also, differences in the recorded state of each memory cell arise due to differences in the electrical characteristics of each element.

[0056] Here, the difference in electrical characteristics is preferably the difference in the current flowing through the drain electrode (hereinafter referred to as the drain current) at a certain gate voltage, from the viewpoint of easily extracting an output signal as a voltage. Furthermore, the difference in electrical characteristics is more preferably the difference in the drain current when the gate voltage is the voltage at which the TFT is turned on, i.e., the difference in the on-resistance of the TFT, in each memory cell element. Generally, in this field, the voltage at which the TFT is turned on refers to a voltage exceeding the threshold voltage of the TFT, but this is not necessarily limited to this. That is, the method is not limited as long as it utilizes the difference in the electrical characteristics of the elements. The threshold voltage of the TFT can be calculated using the gm method (extrapolation method), the maximum method, the constant current method, or the like.

[0057] At least one memory cell constituting the memory array 100 has at least one element that satisfies either (1) or (2) above. Below, we will explain memory cell 110a that satisfies (1) and memory cell 110b that satisfies (2).

[0058] First, the configuration of the memory cell 110a will be described. Figure 2C is a perspective view showing the configuration of memory cell 110a, and Figure 2D is a cross-sectional view taken along section line 2a-2a' in the perspective view of Figure 2C.

[0059] As shown in Figures 2C and 2D, the memory cell 110a is composed of an element 010a having a gate electrode 011a, a source electrode 012a, a drain electrode 013a, a gate insulating layer 014a, and a semiconductor layer 015a. Here, the gate electrode 011a corresponds to the third electrode, the source electrode 012a corresponds to the first electrode, the drain electrode 013a corresponds to the second electrode, and the semiconductor layer 015a corresponds to the functional layer. The semiconductor layer 015a is in a peelable state. Furthermore, other components may be included in the element 010a as long as they do not impede peeling of the peelable semiconductor layer 015a.

[0060] In the memory cell 110a, the semiconductor layer 015a is in a peelable state, and therefore the recorded state of the memory cell 010a can be rewritten by peeling off the semiconductor layer 015a after fabricating the memory array 110. Specifically, after peeling off the semiconductor layer 015a, the electrical resistance (hereinafter referred to as channel resistance) between the source electrode 012a and the drain electrode 013a of the memory cell 110a is made to be in an insulating state at any gate voltage, and the drain current caused by the semiconductor layer 015a is reduced compared to before peeling, thereby rewriting the recorded state of the memory cell 110a.

[0061] The electrical characteristics of the element 010a do not necessarily need to change before and after the peeling of the semiconductor layer 015a. If the electrical characteristics change sufficiently, it becomes possible to rewrite the recorded state of the memory cell 110a by peeling. On the other hand, if the electrical characteristics do not change sufficiently, the electrical characteristics of the element 010a do not change by peeling, but the appearance of the element 010a changes, thereby improving the confidentiality of the recorded state after rewriting by peeling and counterfeit resistance. Therefore, it is preferable from the perspective of confidentiality of rewriting and counterfeit prevention that the electrical characteristics of the element 010a do not change sufficiently by peeling of the semiconductor layer 015a in at least one memory cell 110a.

[0062] As a method for realizing an element whose electrical characteristics do not change due to peeling of the semiconductor layer 015a, the channel resistance can be made insulated at any gate voltage by prior doping or by devising the shape of the semiconductor layer 015a, or by forming a separate semiconductor layer below the element that will not peel off from the element, thereby suppressing changes in the electrical characteristics of the element 010a.

[0063] Next, the configuration of the memory cell 110b will be described. Figure 2E is a perspective view showing the configuration of memory cell 110b, and Figure 2F is a cross-sectional view taken along section line 2b-2b' in the perspective view of Figure 2E.

[0064] As shown in Figures 2E and 2F, the memory cell 110b is composed of an element 010b having a gate electrode 011b, a source electrode 012b, a drain electrode 013b, a gate insulating layer 014b, a semiconductor layer 015b, and a first insulating layer 016b. Here, the gate electrode 011b corresponds to the third electrode, the source electrode 012b corresponds to the first electrode, the drain electrode 013b corresponds to the second electrode, and the semiconductor layer 015b corresponds to the functional layer. The first insulating layer 016b is in a peelable state. Furthermore, other components may be included in the element 010b as long as they do not impede peeling of the peelable first insulating layer 016b.

[0065] The first insulating layer 016b, when in contact with the semiconductor layer 015b, can change the threshold voltage of the element 010b, increase or decrease the charge density of the semiconductor layer 015b, or change the conductivity type of the semiconductor layer 015b. Because the threshold voltage transition and the increase or decrease in charge density are easily affected by manufacturing variations in the electrical characteristics of the element 010b, it is preferable to change the conductivity type by using the first insulating layer 016b.

[0066] In the memory cell 110b, the first insulating layer 016b is in a peelable state, and therefore the recorded state of the memory cell 010b can be rewritten by peeling off the first insulating layer 016b after fabricating the memory array 100. The recorded state of the memory cell 110b can be rewritten by changing the threshold voltage, charge density, and channel conductivity type before and after peeling off the first insulating layer, and increasing or decreasing the drain current caused by the semiconductor layer 015b compared to before peeling.

[0067] The electrical characteristics of the element 010b do not necessarily need to change before and after the peeling of the first insulating layer 016b. If the electrical characteristics change sufficiently, the peeling makes it possible to rewrite the recorded state of the memory cell 110b. On the other hand, if the electrical characteristics do not change sufficiently, the peeling changes the appearance of the element 010b, thereby improving the confidentiality of the recorded state after the rewriting by peeling and the counterfeit resistance. Therefore, from the perspective of the confidentiality of the rewriting and the prevention of counterfeiting, it is preferable that the electrical characteristics of at least one memory cell 110b do not change sufficiently due to the peeling of the first insulating layer 016b.

[0068] One way to realize an element whose electrical characteristics do not change due to peeling of the first insulating layer 016b is to make the channel resistance in an insulating state at any gate voltage by prior doping or by devising the shape of the semiconductor layer 015b, etc. Another way to achieve this is to form another semiconductor layer in advance around the semiconductor layer 015b, etc., to suppress changes in the electrical characteristics of the element 010b due to peeling of the first insulating layer.

[0069] When the elements 010, 010a, and 010b are driven as TFTs, i.e., field-effect transistors, the conductivity type of the field-effect transistors is not particularly limited, and may be any of p-channel, n-channel, and ambipolar types as long as the gate voltage can be appropriately controlled by a control circuit. However, from the viewpoint of ease of reading and rewriting the recorded state of the memory array 100, it is preferable that the elements 010, 010a, and 010b driven as field-effect transistors be p-channel or n-channel conductivity types.

[0070] In this way, when the elements 010, 010a, and 010b are p-channel or n-channel transistors, the range of gate voltages at which they are turned off is relatively wider than that of ambipolar transistors, and each element has a single threshold voltage, which facilitates control of reading the recorded state of the memory array 100. This makes it easier to design peripheral circuits for reading the recorded state of the memory array 100.

[0071] From the viewpoint of improving the confidentiality of the recorded information of the memory array 100, it is preferable to selectively include the elements 010a and 010b so that the recorded state of the memory array 100 is different before and after peeling of the peelable semiconductor layer 015a or the peelable first insulating layer 016b. This makes it possible to prevent the recorded state of the memory array 100 from being easily guessed after peeling (i.e., after reconfiguration of the memory array).

[0072] From the viewpoint of preventing visual interpretation of the recorded state of the memory array 100 before and after peeling, a memory array 100 including the element 010b (i.e., a memory array 100 that satisfies the above (2)) is preferable. In the element 010a, when the semiconductor layer 015a is peeled, the presence or absence, increase or decrease of the semiconductor layer becomes apparent, and there is a possibility that the recorded information of the memory array 100 can be interpreted by visual observation or microscopic observation. On the other hand, in the element 010b, the change in electrical characteristics before and after peeling is not apparent, and the change in electrical characteristics is due to the composition of the first insulating layer 016b, making interpretation difficult. Therefore, in order to prevent visual interpretation, a more preferable embodiment is for the memory array 100 to be composed only of the element 010 and the element 010b.

[0073] In the memory array 100 described above, the manufacturer can selectively arrange the elements 010a and 010b within the memory array 100 to limit the record information that can be rewritten. This allows the record information after peeling to be unique for each manufactured memory array 100, ensuring the integrity of the record information after peeling. Furthermore, by appropriately selecting a peeling method as described below, it is possible to selectively peel off the peelable semiconductor layer or the peelable first insulating layer, so that the record information after peeling is not determined during manufacturing, maintaining confidentiality. This selective and limited reconstruction of the record information improves the confidentiality and integrity of the record information in the memory array 100, thereby providing a highly reliable authentication method described below.

[0074] <Memory array constituent materials> Each component constituting the memory array 100 will be described below. The substrate 001 may be made of any material as long as at least the surface on which the electrodes and elements are disposed is insulated. Examples include silicon wafer, glass, and polyimide. The substrate 001 may also be a laminate of multiple materials. Note that, considering application to inexpensive manufacturing processes such as roll-to-roll and application to devices with curvature such as flexible devices and bendable devices, the substrate is preferably a highly flexible material such as a film, and is preferably as thin as possible as long as the desired functionality and properties, such as insulation and protection, can be ensured.

[0075] The materials used for the gate electrodes 011, 011a, and 011b, source electrodes 012, 012a, and 012b, drain electrodes 013, 013a, and 013b of the elements 010, 010a, and 010b, and wiring materials (such as the bit line 002 and word line 003) may be any conductive material that can be commonly used as an electrode. Examples include indium tin oxide (ITO), gold, silver, copper, aluminum, polysilicon, conductive polymers, and carbon materials. These electrode materials may be used alone or in combination with a plurality of materials.

[0076] The materials contained in the gate insulating layers 014, 014a, and 014b are not particularly limited as long as they have the desired insulating properties. Examples include silicon oxide, alumina, and polyimide. Considering application to inexpensive manufacturing processes such as roll-to-roll, materials that can be applied to coating methods and printing methods are preferred.

[0077] The material contained in the semiconductor layer 015 is not particularly limited as long as it provides desired electrical properties, is applicable to an inexpensive manufacturing process, and has excellent processability. Among these, it is more preferable that the material contained in the semiconductor layer is one or more selected from organic semiconductor materials, carbon nanotubes (CNTs), carbon nanocoils, fullerenes, graphene, and nanodiamonds, in that it achieves high electrical properties and is easy to form by coating.

[0078] In particular, CNT is preferred, and from the viewpoint of processability such as dispersibility of the CNT itself, CNT having a conjugated polymer attached to at least a part of the surface thereof is even more preferred.

[0079] Furthermore, configuring multiple CNTs into a network is preferable because it achieves both better electrical properties and easier manufacturing than manufacturing and arranging individual CNTs or aligning multiple CNTs. The network configuration of multiple CNTs can be observed using an atomic force microscope (AFM) or a transmission electron microscope (TEM).

[0080] Furthermore, in order to suppress variations in TFT characteristics and to suppress leakage current paths across multiple channels, the CNTs preferably contain 80% by weight or more of semiconducting CNTs, even more preferably 90% by weight or more of semiconducting CNTs, and particularly preferably 95% by weight or more of semiconducting CNTs.

[0081] The semiconductor layer 015a is not particularly limited as long as it is formed in a state that allows it to be peeled off from the element, and may be formed from the same material as the semiconductor layer 015. A semiconductor layer 015 that is not peelable has a relatively strong bond to the layer that it contacts in the element 010, such as a covalent bond, an ionic bond, or a hydrogen bond. For example, when the semiconductor layer is formed by coating, the semiconductor layer 015 and the insulating layer 014 may have hydroxyl groups at the interface and may be more strongly bonded via residual water or alcohol.

[0082] On the other hand, the semiconductor layer 015a can be peeled off by contacting it with the adjacent layer in the element 010a via weak bonding forces, primarily van der Waals forces (which may partially include other bonding forces). Therefore, from the viewpoint of improving peelability, the semiconductor layer 015a is preferably one or more selected from organic semiconductor materials, CNTs, carbon nanocoils, fullerenes, graphene, and nanodiamonds. This is because these materials have few unbonded sites and inactive surfaces and interfaces. More preferably, the semiconductor layer 015a is one or more of the above-mentioned preferred materials that do not contain oxygen in their chemical structure, and even more preferably, one or more of the above-mentioned preferred materials that do not contain oxygen but have fluorine in their chemical structure. Oxygen-free structures are less likely to generate hydroxyl groups on the surface or interface in the atmosphere. Furthermore, fluorine content tends to make the surface or interface inactive.

[0083] Furthermore, when the semiconductor layer 015a is formed by coating, it is preferable that the semiconductor layer 015a is made of one or more materials selected from the above-mentioned preferred materials that are dispersible in an organic solvent that does not contain water or alcohol. Examples of organic solvents that do not contain water or alcohol include aromatic carbons such as toluene and xylene, and halogenated carbons such as dichlorobenzene. In this way, the semiconductor layer 015a can be formed separately from the semiconductor layer 015 by selectively applying a more preferred peelable material.

[0084] The semiconductor layer 015b is not particularly limited as long as the first insulating layer 016b is formed in a state that it can be peeled off from the element, and may be formed of the same material as the semiconductor layer 015.

[0085] From the viewpoint of improving the peelability of the first insulating layer 016b, the semiconductor layer 015b is preferably one or more selected from organic semiconductor materials, CNTs, carbon nanocoils, fullerenes, graphene, and nanodiamonds, because these materials have few unbonded sites and inactive surfaces and interfaces.

[0086] The first insulating layer 016b is not particularly limited as long as it is formed in a state that it can be peeled off from the element, and any material may be used as long as it can change the electrical characteristics of the element 010b.

[0087] In particular, when the semiconductor layer 015b contains one or more selected from organic semiconductor materials, CNTs, carbon nanocoils, fullerenes, graphene, and nanodiamonds, the first insulating layer 016b can contain a resin such as acrylic resin, methacrylic resin, olefin polymer, cycloolefin polymer, polystyrene, polysiloxane, polyimide, polycarbonate, vinyl alcohol resin, or phenolic resin, and an organic compound containing a carbon-nitrogen bond, thereby changing the conductivity type from p-channel or ambipolar to n-channel, or changing the threshold voltage or charge density of the n-channel. Hereinafter, these characteristic changes due to the presence of the first insulating layer 016b are referred to as n-channel type changes.

[0088] From the viewpoint of reproducibly obtaining the n-channel type change, the organic compound preferably contains an electron-donating compound having at least one selected from a phosphorus atom, an arsenic atom, and a nitrogen atom. More preferably, the organic compound contains an electron-donating compound having at least one selected from a nitrogen atom and a phosphorus atom, such as an amide compound, an imide compound, a urea compound, an amine compound, an imine compound, an aniline compound, or a nitrile compound.

[0089] Furthermore, when the semiconductor layer 015b is one or more selected from organic semiconductor materials, CNTs, carbon nanocoils, fullerenes, graphene, and nanodiamonds, the first insulating layer 016b can contain a resin such as acrylic resin, methacrylic resin, olefin polymer, cycloolefin polymer, polystyrene, polysiloxane, polyimide, polycarbonate, vinyl alcohol-based resin, or phenol-based resin, and an organic compound containing an aluminum compound and an electron-accepting compound, thereby changing the conductivity type from n-channel or ambipolar to p-channel, or changing the threshold voltage or charge density of p-channel. Hereinafter, this characteristic change due to the first insulating layer 016b is referred to as p-channel type change.

[0090] From the viewpoint of reproducibly obtaining the p-channel type change, the aluminum compound of the organic compound is preferably an organoaluminum compound. More preferably, the organic compound contains an electron-accepting compound having a structure in which at least two groups selected from a halogen atom, a carbonyl group, a cyano group, a nitro group, a sulfinyl group, a sulfonyl group, and an imide group are bonded to one carbon-carbon double bond or one conjugated system.

[0091] By peeling off the first insulating layer 016b, which induces the n-channel or p-channel change, the original characteristics can be restored. This results in a change in the electrical characteristics of the element 010b due to peeling. Furthermore, the first insulating layer 016b may be either an n-channel or p-channel type. However, when the semiconductor layer 015b is made of one or more materials selected from organic semiconductor materials, CNTs, carbon nanocoils, fullerenes, graphene, and nanodiamonds, an n-channel type change is more preferable from the perspective of improving the reproducibility of the element's characteristic change and its atmospheric stability. Many organic semiconductor materials, CNTs, carbon nanocoils, fullerenes, graphene, and nanodiamonds inherently exhibit p-channel characteristics in the atmosphere. Therefore, a first insulating layer 016b with an n-channel type change, which can become p-channel when peeled off, is preferred.

[0092] To improve the peelability of the first insulating layer 016b, it is preferable that the first insulating layer 016b has a small unbonded area at the interface with the components constituting the element 010b, and that the interface be inactive. For example, it is preferable that the first insulating layer 016b contains 50 parts by mass or more of a resin that does not contain hydrogen-bonding functional groups after polymerization and crosslinking.

[0093] The surface condition of other components of the device 010b can also improve the peelability of the first insulating layer 016b. For example, from the viewpoint of improving peelability, it is preferable that the first insulating layer 014b is different from the first insulating layer 016b and contains 50 parts by mass or more of a resin that does not have a hydrogen-bonding functional group. It is also preferable from the viewpoint of improving peelability that the surfaces of the source electrode and drain electrode do not have a hydrogen-bonding or ionic-bonding functional group.

[0094] According to the configuration of the memory array 100 described above, the electrical characteristics between the source electrode and the drain electrode can be changed by peeling off the peelable semiconductor layer or the peelable first insulating layer 016b. The electrical characteristics between the source electrode and the drain electrode are mainly semiconducting and can have a variety of electrical characteristics ranging from insulating to metallic. Therefore, when rewriting recorded information by peeling off the inter-electrode member (i.e., the peelable semiconductor layer or the peelable first insulating layer 016b) using the memory array 100, it is difficult to estimate the electrical characteristics by visual inspection or microscopic images, and it is extremely difficult to decipher the recorded information before and after peeling, compared to rewriting by conventional wiring peeling or wiring removal.

[0095] <Other memory array configurations> Other forms of the memory array 100 may be modified as appropriate depending on the application, but may include two or more elements in a memory cell, as in JP 2022-151732 A. Furthermore, from the viewpoint of enabling accurate reading of recorded information, an amplifier transistor, a select transistor, or the like may be included in the memory cell.

[0096] <Memory array manufacturing method> The memory array 100 according to the present invention can be manufactured by known material lamination techniques, pattern formation techniques, and coating techniques, for example, by the method described in Japanese Patent No. 6350757.

[0097] <Semiconductor device> The semiconductor device according to the present invention is configured to include the memory array 100 described above, and may have any circuit configuration as long as it is possible to read out the recorded information in the memory array 100 and rewrite the recorded information by peeling.

[0098] For example, a semiconductor device including an antenna, a readout circuit, and a memory array 100 can be used. This semiconductor device allows information recorded in the memory array 100 to be read by radio waves using a reader / writer, as with an RFID tag. Furthermore, if the semiconductor device includes the memory array 100, a photoelectric conversion element, and a display element, it is possible to read the information recorded in the memory array 100 by optical signals such as visible light or infrared light. Furthermore, if the semiconductor device includes the memory array 100, a sound-generating element, and a sound-receiving element, it is possible to read the information recorded in the memory array 100 by sound signals such as ultrasonic waves. A specific example may be a device configuration according to known technology, such as that described in step S101 of the authentication method below.

[0099] <Authenticity determination method> Next, the authenticity determining method of the present invention will be described. The authenticity determination method of the present invention includes a pre-peeling step of acquiring first recorded information of the memory array 100 before peeling off the peelable semiconductor layer or the peelable first insulating layer in the memory array 100, a peeling step of peeling off the peelable semiconductor layer or the peelable first insulating layer in the memory array 100 from the memory array 100, a post-peeling step of acquiring second recorded information of the memory array 100 after peeling off the peelable semiconductor layer or the peelable first insulating layer in the memory array 100, and an authenticity determination step of determining authenticity based on at least the first recorded information and the second recorded information.

[0100] The authentication method of the present invention will be described below. Fig. 3 is a flowchart showing one mode of the authentication method according to the first embodiment of the present invention.

[0101] 3, first, information based on at least the recorded information of the memory array 100 written during manufacturing (hereinafter referred to as pre-recorded information) and information regarding the possibility of peeling of the semiconductor layer or the first insulating layer in the memory array 100 is input as pre-information (step S100). This input pre-information is retained. This pre-information may also be information generated based on the pre-recorded information and the information regarding the possibility of peeling.

[0102] Next, the recorded information in the memory array 100 is read as first recorded information (step S101).

[0103] Thereafter, the recorded information in the memory array 100 is rewritten by peeling off the peelable semiconductor layer or the first insulating layer in the memory array 100 (step S102). At this time, the rewritten state is limited to several patterns in advance depending on the peelability of the components in the memory array 100, and the recorded information in the rewritten state is determined by the peeling method.

[0104] Subsequently, the rewritten recorded information in the memory array 100 is read as second recorded information (step S103).

[0105] Next, the authenticity of the semiconductor device is determined based on at least the first recorded information and the second recorded information (step S104).

[0106] In the authenticity determination method, the second recorded information is kept secret until step S102 described above, so confidentiality is guaranteed during distribution. In addition, the second recorded information is not finalized until the peeling method is determined, so it is difficult to tamper with both the first recorded information and the second recorded information, and integrity is guaranteed. This confidentiality and integrity make it possible to determine the authenticity of the semiconductor device in step S104 described above.

[0107] Next, each step in the step flow chart showing one aspect of the authentication method shown in FIG. 3 will be described in detail.

[0108] (Step S100) In step S100, information based on at least the pre-recorded information of the memory array 100 and information regarding the possibility of peeling of the semiconductor layer or the first insulating layer is input as the pre-information. At this time, the input pre-information may be information generated based on the pre-recorded information and the information regarding the possibility of peeling. For example, from the viewpoint of improving confidentiality, it is preferable that the pre-information be an irreversible calculated value such as a hash value using the pre-recorded information and the information regarding the possibility of peeling.

[0109] The pre-recorded information refers to the recorded information written when the memory array 100 is manufactured. The information regarding the peelability may be any information regarding the peelable semiconductor layer or the peelable first insulating layer in the memory array 100. For example, it may be position information within the memory array 100 where the peelable semiconductor layer or the peelable first insulating layer exists, position information of the element to be peeled in step S102, or record information of the memory array 100 to be recorded after peeling in step S102. This information regarding the peelability can be compared with the second record information read in S103.

[0110] In addition, from the viewpoint of increasing the reliability of subsequent judgments, it is preferable that the pre-information, in addition to the pre-recorded information, the information regarding the possibility of peeling is based on position information (hereinafter also referred to as rewritable position information) of the peelable semiconductor layer or peelable first insulating layer of the memory array 100 on the memory array 100, and position information (hereinafter also referred to as planned peeling information) of the element that is to be peeled within the peelable semiconductor layer or peelable first insulating layer.

[0111] This configuration of the pre-recorded information allows for comparison with the first recorded information using the pre-recorded information, and also allows for comparison with the second recorded information using the planned separation information. Additionally, having rewritable position information allows for correction in the event of erroneous rewriting during the separation method. Here, the element to be separated refers to an element having a removable semiconductor layer or a removable first insulating layer within the memory array, for which the separation method in step S102 has been determined in advance in this authentication method.

[0112] The method of obtaining the advance information to be input can be reading it from an information code (barcode, two-dimensional code, microcharacters, etc.) separately recorded in the semiconductor device or memory array 100, reading it from another memory circuit included in the semiconductor device, or information transmission from the manufacturer of the semiconductor device or memory array 100.

[0113] Furthermore, any storage medium may be used as a medium for inputting and storing the preliminary information. Furthermore, the above-mentioned step S100 is not necessarily required for the authentication determination method of the present invention. For example, the preliminary information for authenticity determination can be stored in advance in a device or the like used in step S104, so the authentication determination method can be performed without step S100. However, due to concerns about tampering and leakage of the preliminary information, it is preferable that step S100 be included in the authentication determination method of the present invention. This is because inputting and storing preliminary information each time authenticity is determined increases the reliability of the preliminary information.

[0114] (Step S101) In step S101, the recorded information in the memory array 100 of the semiconductor device is read as first recorded information. At this time, it is also possible to compare the pre-recorded information input in the above step S100 with the first recorded information and perform a pre-determination (step S101-a).

[0115] The reading method is determined by the form and use of the semiconductor device. For example, if the semiconductor device is in the form of a wireless communication device as in known documents related to wireless communication devices (such as Japanese Patent No. 4880263, Japanese Patent No. 6350757, Japanese Patent No. 6747585, Japanese Patent No. 7318780, and Japanese Patent Application Laid-Open No. 2022-151732), the recorded information can be read using a reading device including an antenna. Also, if the semiconductor device is a display device or includes a light-emitting element or a light-receiving element as in known documents related to optical communication devices (such as Japanese Patent No. 4978450 and Japanese Patent Application Laid-Open No. 2006-32352), reading can be performed by optical communication. Also, if the semiconductor device is in the form of an acoustic communication device as in known documents related to acoustic communication devices (such as Japanese Patent Application Laid-Open No. 2020-160589 and Japanese Patent Application Laid-Open No. 7147986), reading can be performed by acoustic communication.

[0116] Furthermore, to implement the reading method, a reading device suitable for the semiconductor device may be used, or if no device is required, the reading method is not limited as long as reading can be performed. For example, if the semiconductor device has an optical display function, the recorded information of the memory array can be visually transmitted, and the user can record and read it by handwriting. Furthermore, any storage medium may be used as a medium for inputting and storing the first recorded information.

[0117] (Step S102) In step S102, the information recorded in the memory array 100 of the semiconductor device is rewritten by peeling off the peelable semiconductor layer or the peelable first insulating layer. Any peeling method may be used as long as the information recorded in the memory array 100 can be read after peeling. For example, this can be achieved by laminating a sheet material having an adhesive layer on the top surface and then peeling off the sheet material. If the adhesive layer of the sheet material is patterned, the flexibility of the state after rewriting is improved. Other peeling methods include peeling due to mechanical stress such as bending or pulling, peeling due to thermal stress using a heater, oven, or light irradiation, and peeling due to stress resulting from crosslinking promotion of the materials constituting the element.

[0118] When carrying out the above-mentioned lamination and peeling, a known lamination device or peeling device may be used, or may not be used. Either one of them may be used.

[0119] (Step S103) In step S103, the recorded information in the memory array 100 in the state rewritten in step S102 is read as second recorded information. At this time, the reading method is determined depending on the form and use of the semiconductor device, and reading can be performed using the same method as in step S101. Furthermore, if a pre-determination is performed in step S101-a described later, it is also possible to compare the pre-recorded information input in step S100 with the second recorded information and determine whether they are authentic or not (step S103-a). Furthermore, any storage medium may be used as a medium for inputting and storing the second recorded information.

[0120] (Step S104) In step S104, the authenticity of the semiconductor device is determined based on the input prior information, the first recorded information, and the second recorded information. At this time, the semiconductor device is determined to be authentic when "information derived from the input prior information is equal to the first recorded information and the second recorded information" or "when the input prior information can be derived using the first recorded information and the second recorded information."

[0121] For example, when the pre-recorded information contained in the input pre-information is equal to the first recorded information and the second recorded information can be derived from the input information regarding the possibility of peeling, the semiconductor device can be determined to be genuine.

[0122] As another example, if the input pre-recorded information is a hash value calculated using the "pre-recorded information" and the "recorded information of the memory array 100 planned after peeling in step S102," it can be determined to be authentic when it is equal to a hash value calculated in the same manner using the first recorded information and the second recorded information. In this case, if it is not authentic, the semiconductor device can be determined to be a defective product, a counterfeit product, an unauthorized product, or the like.

[0123] The determination method may or may not use any device or medium as long as it can perform the above determination. For example, a computer such as a portable computer that can execute a program (hereinafter referred to as a determination program) that describes the above determination method may be used.

[0124] (Devices that perform steps S100 to S104) When devices are used between the above steps S100 to S104, the storage medium that stores the above-mentioned preliminary information, the first recorded information, and the second recorded information, the peeling device that performs the peeling, the reading device that reads the first recorded information and the second recorded information, and the computer that performs the determination method may be separate or integrated, or any of them may not be included.

[0125] (Other steps that may be included) The authentication method may include other steps, such as a calculation step for deriving the prior information into information used in the authentication, a step for sequentially performing the authentication as described below (e.g., step S101-a), a step for changing the prior information according to the circuit state of the semiconductor device, or a step for repeating steps S102 and S103 multiple times to perform multiple rewriting operations. When steps S102 and S103 are repeated multiple times, the number of times is set to n (n is an integer equal to or greater than 1), and the authentication can be performed using the first to (n+1) pieces of recorded information. From the viewpoint of improving the confidentiality of the recorded information and the reliability of the authentication results, it is preferable to repeat steps S102 and S103 multiple times.

[0126] <Authenticity determination method when sequential determination is performed> Next, the authenticity determination method of the present invention when sequential determination is performed will be described. FIG. 4 is a flowchart of the authenticity determination method of the present invention when sequential determination is performed. 3, the authenticity of the semiconductor device is determined in step S104, but it is possible to make the determination in advance as shown in the example of steps S100-a to S103-a below. Steps that may be included other than the following steps are the same as those in the authenticity determination method described above, and the devices used to perform the method are also the same as those in the authenticity determination method described above.

[0127] (Step S100-a) In step S100-a, in a similar manner to step S100, at least pre-recorded information of the memory array 100 of the semiconductor device and information regarding the possibility of peeling of the constituent components of the memory array 100 (semiconductor layer or first insulating layer) are input as pre-information.

[0128] (Step S101-a) In step S101-a, similar to step S101, the recorded information in the memory array 100 of the semiconductor device is read as first recorded information, and then a new preliminary determination is performed. In this preliminary determination, if "information derived from the input recorded information is equal to the first recorded information," "if the input preliminary information can be derived from the first recorded information," or "if the input preliminary recorded information is equal to the first recorded information," the device is determined to be provisionally authentic, and the process proceeds to the subsequent steps. If the device is not provisionally authentic, the semiconductor device can be determined to be a defective product, a counterfeit product, or an unofficial product. Thus, preliminary determination is preferable from the viewpoint of determining the authenticity of a semiconductor device with fewer steps.

[0129] (Step S102-a) In step S102-a, in the same manner as in step S102, the information recorded in the memory array 100 is rewritten by peeling off the removable components in the memory array 100.

[0130] (Step S103-a) In step S103-a, in the same manner as in step S103, the recorded information of the memory array 100 in a state where it has been rewritten in step S102-a is read as second recorded information, and then a determination is made. At this time, the determination can be made that the semiconductor device is genuine when "information derived from the input recorded information is equal to the second recorded information" or "when the input prior information can be derived from the second recorded information." At this time, if the semiconductor device is not genuine, it can be determined that the semiconductor device is a defective product, a counterfeit product, an unauthorized product, or the like.

[0131] <Authenticity determination device> Next, an authenticity determining device capable of executing the authenticity determining method of the present invention will be described. Fig. 5 is a block diagram showing the functional configuration of the authenticity determining device according to the first embodiment of the present invention.

[0132] 5 is a device for determining the authenticity of the semiconductor device, and includes an information acquisition unit 501 that reads recorded information based on the memory array 100 of the semiconductor device, a storage unit 502 that stores prior information about the memory array 100 and the read recorded information, and an information processing unit 503 that determines the authenticity of the semiconductor device. The semiconductor device and the memory array 100 are the same as those described above, and the preferred ranges are also the same.

[0133] The authenticity determination device 500 enables the above-described authenticity determination method to input preliminary information, acquire recorded information based on the memory array 100, and determine authenticity using the preliminary information and the recorded information. In this authenticity determination device 500, the information acquisition unit 501, storage unit 502, and information processing unit 503 are integrated, making it difficult for information used for determination to leak to the outside. Therefore, highly reliable authenticity determination can be performed.

[0134] The information acquisition unit 501 reads the recorded information based on the memory array 100 of the semiconductor device, transmits it to the information processing unit 503, and stores it in the storage unit 502. If the recorded information of the memory array 100 in the semiconductor device is in a form that can be transmitted via wireless communication, the information acquisition unit 501 is a communication module including one or more antennas. The number and form of the antennas depend on the communication form of the semiconductor device, but are primarily determined by the target communication frequency, communication distance, communication range, etc. Examples of communication modules include those having a configuration similar to that of a known RFID reader module or a known wireless unit (e.g., FIG. 5 of Japanese Patent No. 5685511). If the recorded information of the memory array 100 in the semiconductor device is in a form that can be transmitted based on optical information such as optical communication, the information acquisition unit 501 is an optical module including one or more light-receiving elements. The number and form of the light-receiving elements depend on the optical information emitted by the semiconductor device, but are primarily determined by the target optical wavelength, field of view, optical transmission distance, etc. Examples of optical modules include image sensors consisting of single photodetectors (ie, photoconductors, photodiodes, and phototransistors), CCD imagers, and CMOS imagers.

[0135] The storage unit 502 stores the recorded information read by the information acquisition unit 501 and prior information regarding the memory array 100. The storage unit 502 stores a program capable of executing the above-described authenticity determination method. Specific configurations of the storage unit 502 include flash memory, random access memory (RAM), and hard disk drive (HDD).

[0136] The information processing unit 503 determines the authenticity of the semiconductor device based on the recorded information read by the information acquisition unit 501 from the memory array 100 in the semiconductor device and the input prior information about the memory array 100. The information processing unit 503 also controls input and output, including issuing instructions to other components. For example, the information processing unit 503 controls the information acquisition unit 501, transfers the acquired recorded information to the storage unit 502, displays the status of the authenticity determination device and provides operational instructions to the user on the display unit 504, receives input signals from the operation unit 505, and reads prior information from the input / output unit 506. The information processing unit 503 may be configured, for example, as a central processing unit (CPU) or a microcontroller unit (MCU) capable of executing the determination program in step S104 of the above-described authenticity determination method. The information processing unit 503 and other components may be integrated into a computer or formed as a custom IC.

[0137] The display unit 504 can display the authentication result of the semiconductor device by the authentication determination device 500, the status of each part within the authentication determination device 500, the execution status of the step flow of the above-mentioned authentication method, instructions for each authentication determination flow, and advance information and acquired recorded information. For example, known display devices such as electronic paper, thin display, and segment display, light-emitting elements, and dimming elements can be used. If the display unit 504 is a display device capable of displaying two-dimensional videos or two-dimensional images, it can clearly display specific instructions for the peeling method and each step flow.

[0138] The operation unit 505 allows the user to perform operations to instruct the start and end of any of the step flows of the authentication method, and to operate the state of the authentication device based on the information displayed on the display unit 504. Examples of state operations of the authentication device 500 include starting and stopping reading of recorded information in the memory array 100, deciding whether or not to save the recorded information, changing the judgment program of the information processing unit 503, and checking past authentication judgment results.

[0139] The input / output unit 506 is used to input information and a determination program from the outside into the storage unit 502 and store them in the authenticity determination device 500. Examples of the input / output unit 506 include a well-known universal serial bus serial conversion module and an Ethernet serial conversion module.

[0140] In FIG. 5, the display unit 504, the operation unit 505, and the input / output unit 506 are provided, but these are not necessarily required.

[0141] Fig. 6 is a block diagram showing another functional configuration of the authenticity determination device according to Embodiment 1 of the present invention. The authenticity determination device 600 shown in Fig. 6 has a configuration that further includes a peeling unit 601 in addition to the configuration of the above-mentioned authenticity determination device 500.

[0142] The peeling unit 601 can be, for example, a known label peeling machine, coating peeling machine, laser peeling machine, or the like, and can be selected depending on the form of the semiconductor device.

[0143] According to the configuration of the authenticity determination device 600, the information processing unit 503 detects that peeling has been performed from the peeling unit 601. As a result, the second recorded information is read after peeling of the memory array 100, and this is a more preferable form of the authenticity determination device 500 from the viewpoint of performing the flow of the above-described authenticity determination method without error.

[0144] <Authenticity determination method using an authenticity determination device> Next, an example of determining the authenticity of the semiconductor device based on the first recorded information and the second recorded information using the authenticity determining device 500 will be described.

[0145] First, a recording medium on which a determination program to be executed by the authenticity determination device 500 and prior information on the memory array 100 of the semiconductor device are recorded is connected to the input / output unit 506. Thereafter, an instruction to input the prior information is sent to the information processing unit 503 using the operation unit 505, and the prior information is stored in the storage unit 502 (step S100). Of course, the operation unit 505 may be used to obtain prior information on the memory array 100 of the semiconductor device from an external device or server via a network, and the obtained prior information may be stored in the storage unit 502.

[0146] Next, an instruction to start authenticity determination is sent to the information processing unit 503 using the operation unit 505, and the information acquisition unit 501 reads the first recorded information in the memory array 100 from the semiconductor device, inputs it into the memory unit 502, and stores it (step S101).

[0147] Following the instructions on the display unit 504, the memory array 100 in the semiconductor device is rewritten by the peeling method described above (step S102).

[0148] Thereafter, the operation unit 505 is used to notify the information processing unit 503 that the peeling is complete, and the second recorded information is acquired from the memory array 100 in the rewritten state by the information acquisition unit 501, input into the memory unit 502, and stored therein (step S103).

[0149] The information processing unit 503 processes and compares the first recorded information, the second recorded information, and the prior information based on the judgment program, thereby judging the authenticity of the semiconductor device (step S104).

[0150] According to the first embodiment described above, the information processing unit 503 determines the authenticity of the semiconductor device based on the determination program by processing and comparing the first recorded information obtained by the information acquiring unit 501 from the memory array 100 of the semiconductor device before the peelable semiconductor layer or the peelable first insulating layer is peeled off, the second recorded information obtained by the information acquiring unit 501 from the memory array 100 of the semiconductor device after the peelable semiconductor layer or the peelable first insulating layer is peeled off, and the prior information. This allows for highly reliable authenticity determination of the semiconductor device.

[0151] (Embodiment 2) <Authenticity determination device> A description will be given of an authentication device according to embodiment 2. Fig. 7 is a diagram showing an authentication device according to embodiment 2 of the present invention.

[0152] The authenticity determining device 700 shown in Figure 7 is composed of a semiconductor device 701 in which at least one memory cell present in the memory array 100 includes an element having a peelable semiconductor layer or a peelable first insulating layer, and a sheet material 702 in contact with at least a portion of the element having the peelable semiconductor layer or the peelable first insulating layer.

[0153] The authentication device 700 according to the second embodiment has a structure in which a rewriting sheet material is mounted on the semiconductor device described in the first embodiment, and a peeling method is defined for the same, thereby reducing the possibility of errors occurring when rewriting the recorded information in the memory array 100 in the semiconductor device in the authentication method.

[0154] Furthermore, the structure of the authenticity determining device 700 can increase the counterfeit resistance of the semiconductor device 701. For example, if an outsider were to counterfeit the semiconductor device 701, they would need to peel off the sheet material and investigate the structure of the internal memory array 100. However, once the sheet material is peeled off, the structure of the memory array 100 is rewritten, making the state before peeling unknown.

[0155] In this way, by having the structure of the authentication device 700, the semiconductor device 701 has high resistance to counterfeiting.

[0156] The semiconductor device 701 and the memory array 100 included in the semiconductor device 701 are the same as those described in the first embodiment, and the preferred ranges are also the same. As described in the first embodiment, the element included in the authentication device is not limited to an element consisting of three electrodes, as long as it includes at least a first electrode and a second electrode. Furthermore, a memory cell may include multiple elements.

[0157] The sheet material 702 is composed of, for example, a base material 702-1 and an adhesive layer 702-2. The adhesive layer 702-2 is in contact with the peelable semiconductor layer or the peelable first insulating layer of the memory cell in the memory array 100. In FIG. 7, the sheet material 702 covers the entire surface of the semiconductor device 700, but it is not necessary to cover the entire surface, and the size of each component of the sheet material 702 can be determined depending on the application of the authentication device 700. From the viewpoint of preventing visual decoding, it is preferable that the base material 702-1 or the adhesive layer 702-2 contain a colored ink. More preferably, the base material 702-1 or the adhesive layer 702-2 contains a black ink.

[0158] <Configuration of the authenticity determination device> Next, a detailed configuration example of an authentication determining device according to one aspect of the second embodiment of the present invention will be described. Fig. 8A is a bird's-eye view showing a part of one aspect of the authentication determining device according to the second embodiment of the present invention. Fig. 8B is a cross-sectional view showing a cross section cut along the cutting line 8-8' of the bird's-eye view of Fig. 8A.

[0159] 8A and 8B includes a semiconductor device 801 (not shown in its entirety) and a sheet material 802 (not shown in its entirety). The authenticity determining device 800 includes a memory array 803 (not shown in its entirety) within the semiconductor device 801, and three memory cells 804, 804a, and 804b are shown in the figures.

[0160] Memory cell 804 is comprised of an element that does not include a peelable semiconductor layer or a peelable first insulating layer, and has a configuration similar to memory cell 110 of FIGS. 2A and 2B described above.

[0161] The memory cell 804a is made of an element having a peelable semiconductor layer, and has a configuration similar to that of the memory cell 110a in FIGS. 2C and 2D.

[0162] Memory cell 804b is comprised of an element having a peelable first insulating layer, and has a configuration similar to memory cell 110b of FIGS. 2E and 2F.

[0163] The sheet material 802 is composed of a base material 802-1 and an adhesive layer 802-2. Using this sheet material 802, the peelable semiconductor layer and the peelable first insulating layer can be peeled off.

[0164] Fig. 9A is a schematic diagram of one mode of the authentication device according to the third embodiment of the present invention after rewriting, and Fig. 9B is a cross-sectional view showing a cross section cut along the cutting line 9-9' of the bird's-eye view of Fig. 9A.

[0165] 9A and 9B, the peelable semiconductor layer and the peelable first insulating layer can be peeled off from the authentication device 800 by using a sheet material 802. Note that, similar to FIGS. 8A and 8B, the peeled semiconductor device 901, the peeled sheet material 902, and the peeled memory array 903 in FIGS. 9A and 9B are not shown in their entirety.

[0166] 9A and 9B, the semiconductor layer 815a and the first insulating layer 816b of the memory cells 804a and 804b are peeled off and attached to the adhesive layer 902-2 of the sheet material 902 as the semiconductor layer 915a and the first insulating layer 916b, respectively.

[0167] As a result, the memory cells 804a and 804b are changed to memory cells 904a and 904b.

[0168] As described in the first embodiment, this exfoliation method can make the electrical characteristics of memory cell 804a and memory cell 804b different from those before exfoliation. As a result, the recorded state of memory array 803 can be rewritten by exfoliating it to the configuration of memory array 903.

[0169] From the viewpoint of improving the peelability of the peelable semiconductor layer or the peelable first insulating layer, when the adhesive strength at the point where the peelable semiconductor layer or the peelable first insulating layer present in the memory array 803 contacts something other than a component of the sheet material 802 is defined as a1, and the adhesive strength at the point where the component of the sheet material 802 contacts the peelable semiconductor layer of the memory cell 804a or the peelable first insulating layer of the memory cell 804b is defined as a2, it is preferable that the following (3) be satisfied: a1 < a2 (3)

[0170] Furthermore, from the viewpoint of concealing the recorded information of the memory array 803 after peeling, it is preferable that the adhesive layer 802-2 of the sheet material 802 is patterned. By using this patterned adhesive layer 802-2, it is possible to vary the rewritten information after peeling depending on the sheet material 802. Therefore, even if information regarding the possibility of peeling is leaked during the manufacture of a certain memory array 803, it is possible to vary the recorded information of the memory array 803 depending on the pattern of the adhesive layer 802-2 of the sheet material 802.

[0171] Furthermore, the peelable semiconductor layer or the peelable first insulating layer and the adhesive layer 802-2 may be made of the same material or may be integrated.

[0172] From the viewpoint of enhancing the confidentiality of the information recorded in the memory array of the authentication device, it is preferable that the semiconductor devices 701 and 801 have a structure including an antenna in addition to the memory array, which makes it possible to read the information recorded in the memory array by visually undecipherable wireless communication.

[0173] From the viewpoint of enhancing the identifiability of the semiconductor devices 701, 801 as genuine products, it is preferable that the information recorded in the memory array within the semiconductor devices 701, 801 be the individual identification information of the semiconductor devices 701, 801. If the semiconductor devices 701, 801 have a separate memory circuit and the individual identification information is based on the information recorded in that memory circuit, there is a possibility that the information may be deciphered. In addition, once the individual identification information is deciphered and copied or tampered with, the reliability of the individual identification information of the semiconductor devices 701, 801 decreases. On the other hand, if the information recorded in the memory array used in the authenticity determination method of the present invention is the individual identification information, the recorded information can be rewritten by peeling, thereby improving the confidentiality of the individual identification information of the semiconductor devices 701, 801.

[0174] For example, it is possible to generate individual identification information using the recorded information before and after peeling, or to use the recorded information after rewriting by the peeling method (i.e., the second recorded information in the authenticity determination method) as the individual identification information.

[0175] <Materials for authenticity determination devices> The constituent materials used in the authentication device will be described below. The constituent materials of the memory arrays 703 and 803 are the same as those described in the first embodiment, and the preferred ranges are also the same.

[0176] The substrates 702-1 and 802-1 may be single-layer or multi-layer, as long as they are suitable for lamination and coating of other laminated materials and are peelable from the semiconductor device. The specific structure is determined by the intended use of the authentication device. For example, any material with sufficient strength can be used, including paper materials such as fine paper, kraft paper, glassine paper, rayon paper, coated paper, synthetic paper, and paper laminated with a resin film, as well as film substrates made of polyester, polyethylene, polypropylene, polyethylene fluoride, polyvinylidene fluoride, polyvinyl chloride, polyvinylidene chloride, polyvinyl alcohol, polymethyl methacrylate, polyethersulfone, polyetheretherketone, polyamide, polyimide, and the like. Furthermore, these substrates preferably contain pigments or metallic nano- or microstructure materials to provide color, as described above.

[0177] The adhesive layers 702-2 and 802-2 are not particularly limited, and may be made of, for example, an acrylic adhesive, a urethane adhesive, a rubber adhesive, or the like, and may be one layer or multiple layers. Furthermore, when the adhesive layer is located in contact with the peelable semiconductor layer or the peelable first insulating layer, it is preferable that the adhesive strength of that location satisfies the above-mentioned condition (3), where a2 is the adhesive strength of that location.

[0178] The adhesive layers 702-2 and 802-2 can be formed by a coating process using spin coating, blade coating, slit die coating, bar coater, dispenser, immersion and pull-up, inkjet printing, gravure printing, screen printing, offset printing, transfer printing, etc.

[0179] In addition to the above-described substrate and adhesive layer, other layers may be included. For example, a layer made of a dye or a metallic nano- or microstructured material may be included to color the sheet materials 702, 802. Furthermore, an electromagnetic wave blocking layer made of a metal, semi-metal, or semiconductor may be included to prevent observation of the semiconductor devices 701, 801 or the memory arrays 703, 803. Furthermore, layers such as coating promoters or hydrophilic or water-repellent coatings may be included to facilitate the lamination of other laminated materials, pattern formation, and peeling.

[0180] <Method for manufacturing an authenticity determination device> Examples of methods for manufacturing an authenticity determination device include a method in which the constituent components of a sheet material (such as an adhesive layer and a base material) are sequentially stacked on a semiconductor device, and a method in which the semiconductor device and sheet material are fabricated in advance and then bonded together.

[0181] First, a method for producing an authentication device by sequentially stacking constituent members of a sheet material on a semiconductor device will be described, taking as an example a case where the sheet material consists of only an adhesive layer and a base material.

[0182] A semiconductor device is formed as described in the first embodiment. Then, an adhesive is selectively applied to elements in memory cells on a memory array in the semiconductor device using, for example, a dispenser method. After the adhesive is temporarily cured, a substrate is placed on the adhesive and bonded to it, and the adhesive is then fully cured. As a result, the substrate and adhesive layer are formed as a sheet material on the semiconductor device, completing an authentication device.

[0183] In addition, a method for producing an authentication device by previously producing a semiconductor device and a sheet material and then bonding them together will be described using an example in which the sheet material consists of only an adhesive layer and a base material.

[0184] First, a semiconductor device is formed as described in the first embodiment, where the memory array includes a selectively peelable semiconductor layer or a peelable first insulating layer. Next, an adhesive is applied to a substrate by a bar coating method and temporarily cured to produce a sheet material. After that, the temporarily cured adhesive is attached to the semiconductor device with the adhesive facing downwards and then permanently cured. This completes the fabrication of an authentication device.

[0185] <Modification 1 of the Authentication Device> A first modification of the authentication determining device according to the second embodiment will be described below. Figures 10A and 10B are diagrams showing an authentication determining device 1000 according to the first modification.

[0186] The authentication device 1000 of the first modification is composed of a semiconductor device 1001 in which at least one memory cell present in the memory array 100 includes an element having a peelable semiconductor layer or a peelable first insulating layer, and a sheet material 1002 in contact with at least a portion of the element having the peelable semiconductor layer or the peelable first insulating layer. 10A and 10B do not show the detailed structure of the memory array 1003 included in the semiconductor device 1001 for simplicity.

[0187] The sheet material 1002 is composed of a base material 1002-1, an adhesive layer 1002-2, and an optical information pattern 1002-3. The adhesive layer 1002-2 is in contact with the peelable semiconductor layer or peelable first insulating layer of the memory cell in the memory array 100. Furthermore, the interface between the base material 1002-1 and the adhesive layer 1002-2 contains a locally patterned dye or metal nano-micro structure material (hereinafter referred to as a colored component), and pattern 1002-3 is recorded as prior information that can be read by an optical signal. This eliminates the need to transmit the prior information required for authenticating the authentication device by a separate means, enabling more efficient authentication.

[0188] 10A, the optical information pattern 1002-3 is included at the interface between the substrate 1002-1 and the adhesive layer 1002-2, but it may be formed separately at the interface or surface of a component as long as it is part of the sheet material 1002. One method for forming the sheet material 1002 having the optical information pattern 1002-3 is to print the optical information pattern 1002-3 on the substrate 1002-1 by a printing means such as an inkjet printer, and then form the adhesive layer 1002-2.

[0189] The optical information pattern 1002-3 may be recorded in the form of characters, one-dimensional codes, two-dimensional codes, etc. There are no particular limitations on the wavelength range for reading out the optical information pattern 1002-3, and it may be any of ultraviolet, visible light, and infrared.

[0190] Furthermore, when pattern 1002-3 is used to pattern a colored component at the peeling location of the peelable semiconductor layer or the peelable first insulating layer of the memory cell, it is possible to optically record both the preliminary information and the information regarding the peelability by using pattern 1002-3. This allows the input of information required for authenticity determination to be performed simply by reading the information in pattern 1002-3, making it easy to perform authenticity determination.

[0191] <Modification 2 of Authenticity Verification Device> The following describes Modification 2 of the authentication determining device according to Embodiment 2. Figures 11A, 11B, and 11C are diagrams showing an authentication determining device 1100 according to Modification 2.

[0192] The authentication device 1100 of the second modification is composed of a semiconductor device 1101 in which at least one memory cell present in the memory array 100 includes an element having a peelable semiconductor layer or a peelable first insulating layer, and a sheet material 1102 in contact with at least a portion of the element having the peelable semiconductor layer or the peelable first insulating layer. For simplicity, wiring connecting each memory cell is not shown in Figures 11A and 11B. For simplicity, detailed structures of memory arrays 1103 and 11032 included in the semiconductor devices 1101 and 11012 are not shown in Figure 11C.

[0193] Sheet material 1102 is composed of base material 1102-1 and adhesive layer 1102-2. Sheet material 1102 includes perforation line 1102-3. Perforation line 1102-3 is illustrated as a zipper-shaped perforation line in the bird's-eye view of Fig. 11A, but may be a perforation line of any shape, and known techniques can be used.

[0194] The cut lines 1102-3 can be formed by punching using a Thomson blade, laser ablation, or a cutting plotter to drill holes in the sheet material 1102. The authenticity determining device 1100 can be formed by using the sheet material 1102 with the cut lines 1102-3 and the above-mentioned method for manufacturing an authenticity determining device.

[0195] 11A and 11B, which are bird's-eye views of the authentication device 1101 before and after peeling, cutting inside the cut line 1102-3 makes it possible to peel only a specific portion of the sheet material 1102. In this way, by including the cut line 1102-3, it is possible to clearly indicate the peeled portion, making it less likely that an error will occur when performing authentication.

[0196] Furthermore, by including multiple cut lines 1102-3, it is possible to provide multiple separate peelable areas, thereby providing an authentication device that can perform authentication multiple times in stages using a single authentication device.

[0197] (Embodiment 3) <Packaging material> A packaging material using the authentication device of the present invention will be described. The packaging material of the present invention has an authentication device mounted on the packaging material body. Fig. 12 is a diagram showing a packaging material 1200 according to the third embodiment.

[0198] The packaging material 1200 is formed from a packaging body 1201 and an authentication determining device 700. The packaging body 1201 may be made of a transparent resin material such as polyethylene terephthalate, polyvinyl chloride, polypropylene, polyethylene, cyclic olefin copolymer, polychlorotrifluoroethylene, polychlorotetrafluoroethylene, or polyvinylidene chloride, a foamed material of these materials, or a laminate of two or more materials selected from these materials. The configuration of the authentication determining device 700 may be the same as the examples described in the first and second embodiments.

[0199] An example of a method for forming the packaging material is to apply an adhesive to the packaging material body 1201 or a portion of the authentication determining device 700, and then attach the authentication determining device 700. Other examples of the method include the method for forming a packaging material described in International Publication No. 2019 / 069772. The packaging material body 1201 may be integral with the substrate 702-1 of the authentication determining device 700, in which case the packaging material can be formed using the above-described method for producing an authentication determining device.

[0200] The packaging material 1200 includes the authenticity determining device 700, which makes it possible to reliably determine the authenticity of the packaged object.

[0201] <Packing materials> A packaging material using the authentication device of the present invention will be described. The packaging material of the present invention has an authentication device mounted on the packaging material body. Fig. 13 is a diagram showing a packaging material 1300 according to the third embodiment.

[0202] The packaging material 1300 is formed from a packaging material main body 1301 and an authentication determining device 700. The configuration of the packaging material main body 1301 may be a cardboard box, a paper box, a plastic box, a wooden box, etc. before and after assembly. Fig. 13 shows the state of the packaging material main body before assembly. The configuration of the authentication determining device 700 may use the examples described in the first and second embodiments.

[0203] The packaging material can be formed by applying an adhesive to the packaging material main body 1301 or a portion of the authentication determining device 700, and then pasting the authentication determining device 700. The packaging material main body 1301 may be integral with the base material 702-1 of the authentication determining device 700, in which case the packaging material can be formed using the above-described method for manufacturing an authentication determining device.

[0204] The packaging material 1300 includes the authenticity determining device 700, which makes it possible to determine the authenticity of the object to be packaged with high reliability.

[0205] <Packaging> The package of the present invention will be described. The package of the present invention is formed by packing or wrapping the contents with the above-mentioned packing or wrapping material. Figures 14 and 15 are diagrams showing a package 1400 according to the third embodiment.

[0206] 14 has contents packed in packaging material 1300. The contents are not particularly limited, but are preferably commercial products, valuables, or rare items, since the authenticity of the contents can be determined by the authenticity determination device 700 included in the packaging material 1300. The form of the packaging 1400 is not particularly limited as long as it is obtained by covering the contents with the packaging material 1300.

[0207] 15 is formed by wrapping a packaging body 1501 in packaging material 1200. Packaging body 1501 refers to a packaging body in which contents are wrapped in a general packaging material such as cardboard. However, a similar packaging body can also be formed by wrapping the contents directly in packaging material 1200.

[0208] When using the packaging material 1200, a package can be formed by, for example, processing the packaging material 1200 into a bag shape by heat sealing, placing the package body or contents inside, and sealing it.

[0209] A specific example of the package is a product packaged for transportation, etc. By using the package configuration of the present invention, for example, it is possible to reliably distinguish between counterfeit products and genuine products. [Explanation of symbols]

[0210] 100, 703, 803, 1003, 1103 memory array 101, 8101, 9101 base material 102, 8102, 9102 word lines 103, 8103, 9103 bit lines 110, 804, 904, 1104, 11042 memory cells 110a, 804a, 1104a Memory cells including peelable semiconductor layers 110b, 804b, 1104b Memory cells including a peelable first insulating layer 010 Elements 010a Device having a peelable semiconductor layer 010b Device having a peelable first insulating layer 011, 011a, 011b, 811, 811a, 811b, 911, 911a, 911b Gate electrodes 012, 012a, 012b, 812, 812a, 812b, 912, 912a, 912b Source electrode 013, 013a, 013b, 813, 813a, 813b, 913, 913a, 913b Drain electrode 014, 014a, 014b, 814, 814a, 814b, 914, 914a, 914b Gate insulating layer 015, 015b, 815, 815b, 915, 915b Semiconductor layer 015a, 815a Peelable semiconductor layer 016b, 816b Peelable first insulating layer 500, 600 Authenticity Determination Device 501 Information Processing Department 502 Storage section 503 Information Processing Department 504 Display section 505 Operation section 506 Input / output section 601 Peeling part 700, 800, 1000, 1100 Authentication Device 701, 801, 1001, 1101, 11012 Semiconductor devices 702, 802, 1002, 1102 sheet material 702-1, 802-1, 902-1, 1002-1, 1102-1 Base material 702-2, 802-2, 902-2, 1002-2, 1102-2 Adhesive layer 900 Authentication device with sheet material peeled off 901, 11012 Semiconductor device including a memory array in which the semiconductor layer or the first insulating layer is stripped 902 Peeled off sheet material 903, 11032 Memory array with semiconductor layer or first insulating layer stripped 904a, 1104a2 Memory cells rewritten by peeling off the semiconductor layer 904b, 1104b2 Memory cells rewritten by peeling off the first insulating layer 915a Peeled semiconductor layer 916b Peeled first insulating layer 1002-3 Optical Information Pattern 11002 Authentication device with part of the sheet material peeled off 11022 Partially peeled off sheet material 1102-3 Cutting line 1200 Packaging materials 1201 Packaging material body 1300 Packaging materials 1301 Packaging material body 1400, 1500 packages 1501 Packaging body

Claims

1. A substrate; a memory array including a plurality of memory cells arranged on the substrate, each memory cell including one or more elements having at least a first electrode and a second electrode; Including, A semiconductor device, At least one element of at least one memory cell in the memory array is selectively: (1) or (2) (1) The element has a functional layer in contact with both the first electrode and the second electrode, and the functional layer is in a peelable state. (2) The element has a functional layer in contact with both the first electrode and the second electrode, and a first insulating layer in contact with the functional layer, and the first insulating layer is in a peelable state. An authenticity determination method for determining the authenticity of a semiconductor device, which satisfies the following: at least, Before peeling off the peelable functional layer or the peelable first insulating layer, obtaining first recorded information of the memory array; peeling the peelable functional layer or the peelable first insulating layer from the memory array; obtaining second recorded information of the memory array after peeling off the peelable functional layer or the peelable first insulating layer; determining the authenticity of the semiconductor device based on at least the first recorded information and the second recorded information; Including, Authenticity determination method.

2. The authenticity determination method according to claim 1, the first electrode is a source electrode and the second electrode is a drain electrode; Further, a third electrode is provided as a gate electrode, The element is one in which the functional layer is a semiconductor layer. Authenticity determination method.

3. The authenticity determination method according to claim 1, The memory array comprises: The element satisfies (2), Authenticity determination method.

4. The authenticity determination method according to claim 2, The memory array comprises: The conductivity type of the element is changed by peeling off the first insulating layer of the element that satisfies (2) in the memory array. Authenticity determination method.

5. The authenticity determination method according to any one of claims 1 to 4, The memory array comprises: The element having the functional layer in the memory array is a p-channel or n-channel transistor. Authenticity determination method.

6. The authenticity determination method according to any one of claims 1 to 4, The memory array comprises: The functional layer in the memory array comprises one or more semiconductor materials selected from organic semiconductor materials, carbon nanotubes, carbon nanocoils, fullerenes, graphene, and nanodiamonds; Authenticity determination method.

7. The authenticity determination method according to claim 6, The memory array comprises: the functional layer in the memory array contains a carbon nanotube composite in which a conjugated polymer is attached to at least a portion of the surface of the carbon nanotube; Authenticity determination method.

8. The authenticity determination method according to claim 6, The memory array comprises: The element satisfies (2), The first insulating layer of the element that satisfies (2) above is a polymer containing an electron-accepting compound or an electron-donating compound. Authenticity determination method.

9. The authenticity determination method according to any one of claims 1 to 4, further comprising a step of inputting information based on the recorded information of the memory array written at the time of manufacturing and information on the possibility of peeling of the functional layer or the first insulating layer of the memory array as advance information; The prior information is pre-recorded information written during manufacture of the memory array; Position information of the releasable functional layer or the releasable first insulating layer of the memory array on the memory array; Position information of the element having the peelable functional layer or the peelable first insulating layer to be peeled off; Including, The step of determining the authenticity of the semiconductor device includes: determining the authenticity of the semiconductor device based on at least the prior information, the first recorded information, and the second recorded information; Authenticity determination method.

10. an information acquisition unit that reads out recorded information based on the memory array of the semiconductor device, the memory array including a substrate and a plurality of memory cells arranged on the substrate, the memory array including one or more elements each having at least a first electrode and a second electrode; a storage unit that stores advance information and the recorded information related to a memory array in the semiconductor device; an information processing unit that determines the authenticity of the semiconductor device; Equipped with The information processing unit determining the authenticity of the semiconductor device based on at least the preliminary information, first recorded information based on the memory array before the peelable functional layer or the peelable first insulating layer in the memory array is peeled off, which is read by the information acquisition unit, and second recorded information based on the memory array after the peelable functional layer or the peelable first insulating layer in the memory array is peeled off, which is read by the information acquisition unit; Authenticity determination device.

11. The authenticity determination device according to claim 10, Further provided is a peeling unit that peels off the peelable functional layer or the peelable first insulating layer. Authenticity determination device.

12. A substrate; a semiconductor device including a memory array on the substrate, the memory array including a plurality of memory cells arranged on the substrate, the memory cells each including one or more elements having at least a first electrode and a second electrode; a sheet material having at least an adhesive layer and a substrate; Including, An authenticity determining device, At least one element of at least one memory cell in the memory array of the semiconductor device is selectively selected from the following (1) or (2): (1) The element has a functional layer in contact with both the first electrode and the second electrode, and the functional layer is in a peelable state. (2) The element has a functional layer in contact with both the first electrode and the second electrode, and a first insulating layer in contact with the functional layer, and the first insulating layer is in a peelable state. Fulfilling At least one element of at least one memory cell present in the memory array has a peelable functional layer or a peelable first insulating layer, the peelable functional layer or the peelable first insulating layer being in contact with at least a portion of the adhesive layer of the sheet material; Authentication device.

13. The authentication device according to claim 12, the first electrode is a source electrode and the second electrode is a drain electrode; Further, a third electrode is provided as a gate electrode, The element is one in which the functional layer is a semiconductor layer. Authentication device.

14. The authenticity determining device according to claim 12 or 13, The adhesive strength between the peelable functional layer or the peelable first insulating layer present in the memory array and a layer in contact with a material other than the sheet material is defined as a1; When the adhesive strength between the peelable functional layer or the peelable first insulating layer and the sheet material is a2, Satisfy the following (3): a1 < a2...(3) Authentication device.

15. The authenticity determining device according to claim 12 or 13, The adhesive layer of the sheet material is in a patterned shape. Authentication device.

16. The authenticity determining device according to claim 12 or 13, further comprising at least an antenna; The recorded information of the memory array can be read out by wireless communication. Authentication device.

17. The authenticity determining device according to claim 12 or 13, the individual identification information of the authentication device is based on the recorded information of the memory array; Authentication device.

18. A packaging material comprising the authentication device according to claim 12 or 13.

19. A packaging material comprising the authentication device according to claim 12 or 13.

20. The packaging material according to claim 18; A package in which the package body or contents are packed with the packaging material.

21. The packaging material according to claim 19; A package in which the contents are packed with the packaging material.

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