Device and method for protecting nickel and nickel containing component using thin film

Abstract

To provide a method for depositing a coating on the component of a semiconductor manufacturing apparatus.SOLUTION: A method for depositing a coating comprises continuously exposing the component of a semiconductor manufacturing apparatus including nickel or nickel alloy to an aluminum precursor and a reactant by a deposition process to form an aluminum containing layer on the surface of the component of the semiconductor manufacturing apparatus.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE

[0001] Embodiments of the present disclosure generally relate to deposition processes, such as vapor deposition processes, for depositing films on semiconductor manufacturing components. [Background technology]

[0002]

[0002] Semiconductor manufacturing equipment, such as chemical vapor deposition chambers, has components that corrode or deteriorate over time due to exposure to high-temperature gases and / or reactive chemicals. For example, the present inventors have discovered a problem in which showerhead components in deposition chambers made from nickel-containing materials, such as nickel or nickel alloys, deteriorate when exposed to harsh chemical reaction conditions including high-temperature gases and reactants such as silane. Degradation of one or more deposition chamber components, such as the showerhead, can adversely affect the surface and bulk properties of components within the manufacturing equipment, contributing to or resulting in changes in chemical process conditions and / or defects in semiconductor devices manufactured therein.

[0003]

[0003] The present inventors have observed that coatings on nickel and nickel alloy components in semiconductor manufacturing facilities can be problematic in that they may be too thin to provide protection or may have poor adhesion to adjacent contact surfaces. Furthermore, the present inventors have observed that coatings deposited on nickel and nickel alloy components may be too brittle, thereby shortening the life of the components when exposed to stresses such as high temperatures and / or reactive gases.

[0004]

[0004] Therefore, there is a need for protective coatings on nickel and / or nickel alloy semiconductor manufacturing equipment components and methods for depositing protective coatings on nickel and / or nickel alloy semiconductor manufacturing equipment components. Summary of the Invention

[0005]

[0005] Provided herein are methods and apparatus for depositing a coating on a semiconductor manufacturing equipment component. In some embodiments, the method of depositing a coating on a semiconductor manufacturing equipment component includes sequentially exposing a semiconductor manufacturing equipment component comprising nickel or a nickel alloy to an aluminum precursor and a reactant by a deposition process to form an aluminum-containing layer on the surface of the semiconductor manufacturing equipment component.

[0006]

[0006] In some embodiments, a method for depositing a coating on a component of semiconductor manufacturing equipment includes: sequentially exposing a component of semiconductor manufacturing equipment having a first surface comprising nickel or a nickel alloy to a first precursor and a first reactant by a first vapor deposition process to form a buffer layer having an upper surface on the first surface; and exposing an aluminum precursor and a second reactant by a second vapor deposition process to form an aluminum-containing layer on the upper surface.

[0007]

[0007] In some embodiments, the present disclosure relates to a semiconductor manufacturing equipment component including an aluminum-containing layer disposed on a nickel or nickel alloy surface of the semiconductor manufacturing equipment component, wherein the semiconductor manufacturing equipment component is one or more of a showerhead, a wall, a lid, a ring, a bottom, a shield plate, or a substrate support assembly.

[0008]

[0008] In some embodiments, the present disclosure relates to a non-transitory computer-readable medium having stored thereon instructions that, when executed, deposit a coating on a semiconductor manufacturing equipment component comprising nickel or a nickel alloy by sequentially exposing the component to an aluminum precursor and a reactant in a deposition chamber via a deposition process to form an aluminum-containing layer on the surface of the semiconductor manufacturing equipment component.

[0009]

[0009] In some embodiments, the disclosure relates to a non-transitory computer-readable medium having stored thereon instructions that, when executed, cause a deposition chamber to sequentially expose a semiconductor manufacturing equipment component having a first surface comprising nickel or a nickel alloy to a first precursor and a first reactant by a first vapor deposition process to form a buffer layer having an upper surface on the first surface; and deposit a coating on the semiconductor manufacturing equipment component by exposing an aluminum precursor and a second reactant by a second vapor deposition process to form an aluminum-containing layer on the upper surface.

[0010]

[0010] Other and further embodiments of the present disclosure are described below. [Brief explanation of the drawings]

[0011]

[0011] Embodiments of the present disclosure, briefly summarized above and described in more detail below, can be understood by reference to exemplary embodiments thereof as illustrated in the accompanying drawings. However, because the present disclosure is susceptible to other equally effective embodiments, the accompanying drawings illustrate only typical embodiments of the present disclosure and therefore should not be considered limiting in scope.

[0012] [Figure 1]

[0012] FIG. 1 is a flow diagram of a method for depositing a coating on a component of a semiconductor manufacturing device according to some embodiments of the present disclosure. [Figure 2]

[0013] 1A and 1B illustrate stages in depositing a coating on a component of a semiconductor manufacturing device according to some embodiments of the present disclosure. [Figure 3]

[0014] FIG. 1 is a flow diagram of a method for depositing a coating on a component of a semiconductor manufacturing device according to some embodiments of the present disclosure. [Figure 4]

[0015] 1A-1C illustrate stages in depositing a coating on a component of a semiconductor manufacturing device according to some embodiments of the present disclosure. [Figure 5]

[0016] 1 illustrates a deposition chamber including components for coating according to the present disclosure. [Figure 6]

[0017] 1 illustrates a cluster tool suitable for performing one or more methods according to some embodiments of the present disclosure.

[0013]

[0018] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further description. DETAILED DESCRIPTION OF THE INVENTION

[0014]

[0019] Embodiments of the present disclosure generally relate to protective coatings, such as metal oxide films or film stacks, disposed on semiconductor manufacturing equipment components and methods for depositing protective coatings. Non-limiting examples of semiconductor manufacturing equipment components that can be coated according to the present disclosure can include one or more showerheads, heater assemblies, heated chucks, backing plates, or any other semiconductor manufacturing equipment component, part, or portion thereof that can benefit from a protective coating of the present disclosure deposited or applied thereto. The protective coatings of the present disclosure can be deposited or otherwise formed on the interior and / or exterior surfaces of the semiconductor manufacturing equipment components. In embodiments, the protective coatings of the present disclosure are deposited on or directly onto semiconductor manufacturing equipment components that include metallic nickel, nickel alloys, nickel-containing superalloys, or nickel-platinum alloys, as described below, or on the top surface of a semiconductor manufacturing equipment component.

[0015]

[0020] In one or more embodiments, a method for depositing a coating on a semiconductor manufacturing equipment component includes sequentially exposing a semiconductor manufacturing equipment component or a portion thereof comprising nickel or a nickel alloy to an aluminum precursor and a reactant via a deposition process to form an aluminum-containing layer on the surface of the semiconductor manufacturing equipment component. In some embodiments, the aluminum-containing layer is aluminum oxide (Al2O3). The coated semiconductor manufacturing equipment components of the present disclosure advantageously include robust components having coated nickel and / or coated nickel alloys that can withstand harsh deposition conditions, including high temperatures and reactive gases such as silane. In some embodiments, the coated semiconductor manufacturing equipment components are resistant to harsh chemicals such as chlorine, titanium chloride (TiCl or (TiCl) plasma, fluorine plasma, hydrogen plasma, nitrogen plasma, and silanes such as SiH at elevated temperatures above 150° C., above 250° C., above 300° C., or between 150° C. and 350° C. In embodiments, the coatings are robust and resilient, advantageously maintaining or extending the life of the components when exposed to stresses such as high temperatures and / or reactive gases. Thus, the coated semiconductor manufacturing equipment components of the present disclosure facilitate the formation of robust semiconductor devices produced in semiconductor manufacturing facilities that include coated components according to the present disclosure.

[0016]

[0021] Figure 1 is a flow diagram of a method 100 for depositing a coating on one or more semiconductor manufacturing components according to one or more embodiments described and illustrated herein. Figures 2A-2B illustrate stages of depositing a coating on a component of a semiconductor manufacturing equipment according to method 100. Figure 5 illustrates a deposition chamber suitable for performing one or more methods according to embodiments of the present disclosure, as well as various components thereof or portions thereof suitable as components of a semiconductor manufacturing equipment for coating according to the present disclosure.

[0017]

[0022] 1, 2A, and 2B, in block 120, a coated semiconductor manufacturing equipment component 201 may be formed by sequentially exposing a semiconductor manufacturing equipment component 202 comprising nickel or a nickel alloy to an aluminum precursor and a reactant via a deposition process, such as a vapor deposition process, to form an aluminum-containing layer 220 on a surface 210 of the semiconductor manufacturing equipment component 202. In embodiments, the vapor deposition process may be an ALD process, a plasma-enhanced ALD (PE-ALD) process, a thermal chemical vapor deposition (CVD) process, a plasma-enhanced CVD (PE-CVD) process, or any combination thereof.

[0018]

[0023] In embodiments, the semiconductor manufacturing equipment component 202 can be a component, portion, or surface of the apparatus of FIG. 5, such as the showerhead 518, interior 520, lid 510, or shield 536, that includes nickel or a nickel alloy or includes an outer surface of nickel or a nickel alloy. In some embodiments, the nickel or nickel alloy includes metallic nickel, a nickel alloy, a superalloy containing nickel, or a nickel platinum alloy. In some embodiments, the metallic nickel is a high-purity metal, such as 99.9% or greater, and can include metallic nickel or a nickel alloy. Non-limiting examples of nickel alloys suitable for use herein include nickel platinum alloys, INCONEL® brand nickel-chromium alloys, HASTELLOY® brand nickel-molybdenum-chromium alloys or superalloys, or Monel nickel alloys containing nickel and copper. In some embodiments, the nickel alloy may contain nickel in a concentration ranging from about 80% to about 98%, e.g., from about 85% to about 95%, by weight, and one or more other metals, such as platinum, copper, molybdenum, chromium, or a combination thereof, in a concentration ranging from about 2% to about 20%, e.g., from about 5% to about 15%, by weight. In some embodiments, the nickel alloy includes a nickel platinum alloy, such as NiPt5% (about 95 wt% nickel and about 5 wt% platinum), NiPt10% (about 90 wt% nickel and about 10 wt% platinum), or NiPt15% (about 85 wt% nickel and about 15 wt% platinum). In some embodiments, the nickel includes polyalloys containing a major proportion of nickel and a minor proportion of an element selected from boron or phosphorus and one or more metals such as tin, tungsten, iron, molybdenum, chromium, or copper.

[0019]

[0024] In embodiments, the vapor deposition process is an ALD process, and method 100 further includes sequentially exposing semiconductor manufacturing equipment component 202 or its surface to an aluminum precursor and a reactant to form aluminum-containing layer 220 on surface 210. In some embodiments, each cycle of the ALD process includes exposing semiconductor manufacturing equipment component 202 or its surface to an aluminum precursor, performing a purge, exposing semiconductor manufacturing equipment component 202 or its surface to one or more reactants, and performing another purge. In some embodiments, each cycle of the ALD process is characterized by a pump-purge and is performed to form aluminum-containing layer 220 on surface 210 of semiconductor manufacturing equipment component 202. In embodiments, the order of the aluminum precursor and reactant can be reversed to form aluminum-containing layer 220, such that an ALD cycle includes exposing semiconductor manufacturing equipment component 202 or its surface to a reactant, performing a purge, exposing semiconductor manufacturing equipment component 202 to the aluminum precursor, and performing another purge.

[0020]

[0025] In some embodiments, during each ALD cycle, the semiconductor manufacturing equipment component 202 is exposed to the aluminum precursor for about 0.05 seconds to about 10 seconds, the first reactant for about 0.05 seconds to about 10 seconds, and a purge is performed for about 0.5 seconds to about 30 seconds. In other examples, during each ALD cycle, the semiconductor manufacturing equipment component 202 is exposed to the aluminum precursor for about 0.05 seconds to about 3 seconds, the first reactant for about 0.05 seconds to about 3 seconds, and a purge is performed for about 1 second to about 10 seconds. In an embodiment, the first reactant is water.

[0021]

[0026] In some embodiments, the ALD cycle is repeated 2, 3, 4, 5, 6, 8, about 10, about 12, or about 15 to about 18 times, about 20, about 25, about 30, about 40, about 50, about 65, about 80, about 100, about 120, about 150, about 200, about 250, about 300, about 350, about 400, about 500, about 800, about 1,000, about 200, about 3,000, about 4,000, about 5,000, about 5,500, about 6,000 or more times to form the aluminum-containing layer 220.

[0022]

[0027] In some embodiments, the vapor deposition process is a CVD process, and the method includes simultaneously exposing a semiconductor manufacturing equipment component to an aluminum precursor and a first reactant to form an aluminum-containing layer 220. During an ALD process or a CVD process, the first precursor and the first reactant each may individually include one or more carrier gases. One or more purge gases may, in some examples, be flowed throughout the semiconductor manufacturing equipment component, e.g., semiconductor manufacturing equipment component 202, and / or through the processing chamber between the aluminum precursor exposure and the first reactant exposure, and the same gas may be used as the carrier gas and the purge gas. Exemplary carrier gases and purge gases may independently be or include one or more of nitrogen (N), argon, helium, neon, hydrogen (H), or any combination thereof.

[0023]

[0028] In some embodiments, the aluminum-containing layer 220 may have a thickness sufficient to protect the semiconductor manufacturing equipment component 202 from the harsh conditions mentioned herein. In some embodiments, the aluminum-containing layer 220 can have a thickness of about 1.0 nm to 1,500 nm, or about 100 nm to 1,000 nm, e.g., about 1 nm, about 2 nm, about 3 nm, about 5 nm, about 8 nm, about 10 nm, about 12 nm, or about 15 nm to about 18 nm, about 20 nm, about 25 nm, about 30 nm, about 40 nm, about 50 nm, about 60 nm, about 80 nm, about 100 nm, about 120 nm, about 150 nm, about 200 nm, about 300 nm, about 400 nm, about 500 nm, about 600 nm, about 700 nm, about 800 nm, about 900 nm, about 950 nm, about 1,000 nm, about 1,100 nm, or about 1,200 nm.

[0024]

[0029] In some embodiments, the aluminum precursor contains one or more aluminum precursors. In embodiments, the first reactant contains one or more reducing agents, one or more oxidizing agents, one or more nitriding agents, one or more silicon precursors, one or more carbon precursors, or any combination thereof. Non-limiting examples of reactants include reducing agents, oxidizing agents, such as water, ozone (O), carbon monoxide (CO), carbon dioxide (CO), ammonia (NH), hydrogen (H), metal organic silicon-containing compounds, such as tetraethyl orthosilicate (TEOS), and silicon tetrachloride (SiCl). In embodiments, the aluminum-containing layer 220 can be or include metallic aluminum, aluminum oxide, aluminum nitride, aluminum silicide, aluminum carbide, or any combination thereof. In embodiments, the aluminum-containing layer 220 can be or include aluminum oxide, aluminum nitride, or any combination thereof. In embodiments, the aluminum-containing layer 220 is aluminum oxide. In an embodiment, the aluminum-containing layer 220 is aluminum nitride.

[0025]

[0030] In some embodiments, the aluminum precursor can be or can include one or more of aluminum alkyl compounds, one or more aluminum alkoxy compounds, one or more aluminum acetylacetonate compounds, substitution products thereof, complexes thereof, adducts thereof, salts thereof, or any combination thereof. Exemplary aluminum precursors can be or can include trimethylaluminum, triethylaluminum, tripropylaluminum, tributylaluminum, trimethoxyaluminum, triethoxyaluminum, tripropoxyaluminum, tributoxyaluminum, aluminum acetylacetonate (Al(acac)3, also known as tris(2,4-pentanediono)aluminum), aluminum hexafluoroacetylacetonate (Al(hfac)3), trisdipivaloylmethanatoaluminum (DPM3AI; (Cn HigC bAI), isomers thereof, complexes thereof, adducts thereof, salts thereof, or any combination thereof.

[0026]

[0031] In some embodiments, suitable deposition temperatures include temperatures between 100°C and 400°C. In some embodiments, trimethylaluminum (deposited at a temperature between about 100°C and about 400°C) is delivered to the semiconductor fabrication equipment component 202 via vapor delivery over a predetermined pulse length of 0.1 seconds. During processing, the deposition reactor is operated under a flow of nitrogen carrier gas (100 sccm to 10,000 sccm, e.g., about 1,500 sccm) with the chamber maintained at a predetermined temperature of about 200°C to about 400°C, or about 210°C to about 350°C, and a pressure of about 1 Torr to about 10 Torr, e.g., about 2.0 Torr. After the trimethylaluminum pulse, the chamber is then purged of all necessary gases and by-products for a predetermined amount of time. Water vapor is then pulsed into the chamber for about 0.1 seconds at a chamber pressure of about 1.5-3.0 Torr, e.g., about 2.0 Torr or 2.0 Torr. An additional chamber purge is then performed to remove any excess reactants and reaction by-products from the reactor. After deposition, an additional purge may be performed during a chamber cool-down period. In some embodiments, the process is repeated as many times as necessary to obtain the semiconductor manufacturing equipment component 202 coated with a coating comprising or consisting of a film of Al2O3 to a desired or preselected thickness. In some embodiments, the semiconductor manufacturing equipment component 202 may be subjected to further downstream processing, such as annealing at temperatures up to 1000°C, e.g., about 500°C, under an inert nitrogen flow of about 500 sccm for up to 24 hours, or about 1 hour.

[0027]

[0032] In some embodiments, the present disclosure relates to a method of depositing a coating on a semiconductor manufacturing equipment component, the method comprising: sequentially exposing a semiconductor manufacturing equipment component comprising nickel or a nickel alloy to an aluminum precursor and a reactant by a deposition process to form an aluminum-containing layer on the surface of the semiconductor manufacturing equipment component. In some embodiments, the aluminum precursor is trimethylaluminum and the reactant is water. In some embodiments, the aluminum-containing layer is deposited to a thickness of 100 to 1000 nanometers. In some embodiments, the deposition process is an atomic layer deposition (ALD) process, a plasma-enhanced ALD (PE-ALD) process, a thermal chemical vapor deposition (CVD) process, a plasma-enhanced CVD (PE-CVD) process, or any combination thereof. In some embodiments, the atomic layer deposition (ALD) process comprises contacting the semiconductor manufacturing equipment component with an aluminum precursor at a temperature of 100 to 400° C. and a pressure of 1 to 10 Torr. In some embodiments, the aluminum-containing layer is metallic aluminum, aluminum oxide, aluminum nitride, aluminum silicide, aluminum carbide, or any combination thereof. In some embodiments, the aluminum oxide is Al2O3. In some embodiments, the method further includes depositing a buffer layer directly on the semiconductor manufacturing equipment component comprising nickel or a nickel alloy, and forming an aluminum-containing layer directly on the buffer layer. In some embodiments, depositing the buffer layer is an atomic layer deposition (ALD) process. In some embodiments, the buffer layer comprises yttrium oxide, titanium oxide, titanium nitride, or a combination thereof. In some embodiments, the buffer layer forms an adhesion layer between the semiconductor manufacturing equipment component comprising nickel or a nickel alloy and the aluminum-containing layer. In some embodiments, the semiconductor manufacturing equipment component is a showerhead. In some embodiments, the semiconductor manufacturing equipment component is a showerhead having an exterior or top surface comprising nickel, a nickel alloy, or a combination thereof, or consisting of nickel, a nickel alloy, or a combination thereof.

[0028]

[0033] Figure 3 is a flow diagram of a method 300 for depositing a coating on one or more semiconductor manufacturing components according to one or more embodiments described and illustrated herein. Figures 4A-4C illustrate several stages of depositing a coating on a component of a semiconductor manufacturing device according to method 300. Figure 5 illustrates a deposition chamber including various components suitable for coating according to the present disclosure.

[0029]

[0034] As shown in FIG. 3 , a method 300 of depositing a coating on a semiconductor manufacturing equipment component includes, at block 320, sequentially exposing a semiconductor manufacturing equipment component having a first surface comprising nickel or a nickel alloy to a first precursor and a first reactant via a first vapor deposition process to form a buffer layer having an upper surface on the first surface; and, at block 340, exposing an aluminum precursor and a reactant via a second vapor deposition process to form an aluminum-containing layer on the upper surface.

[0030]

[0035] In some embodiments, as shown in FIG. 4A , in block 320, a semiconductor manufacturing equipment component 402 can be exposed to a first precursor and a first reactant via a vapor deposition process to form a buffer layer 410 having an upper surface 415 on the semiconductor manufacturing equipment component 402. The vapor deposition process can be an ALD process, a plasma-enhanced ALD (PE-ALD) process, a thermal chemical vapor deposition (CVD) process, a plasma-enhanced CVD (PE-CVD) process, or any combination thereof. In one or more embodiments, the vapor deposition process is an ALD process, and the method includes sequentially exposing a surface of the semiconductor manufacturing equipment component 402 to a first precursor and a first reactant to form the buffer layer. Each cycle of the ALD process includes exposing the surface 411 of the semiconductor manufacturing equipment component 402 to a first precursor, performing a purge, exposing the semiconductor manufacturing equipment component 402 to a first reactant, and performing a purge to form the buffer layer 410. The cycle can be repeated until a buffer layer having a predetermined thickness is obtained. In some embodiments, the order of the first precursor and first reactant can be reversed, such that an ALD cycle includes exposing the surface 411 of the semiconductor manufacturing equipment component 402 to the first reactant, performing a purge, exposing the semiconductor manufacturing equipment component 402 to the first precursor, and performing a pump-purge to form the buffer layer 410.

[0031]

[0036] In some embodiments, during each ALD cycle, the semiconductor manufacturing equipment component 402 is exposed to the first precursor for about 0.1 seconds to about 10 seconds, the first reactant for about 0.05 seconds to about 10 seconds, and a purge is performed for about 0.5 seconds to about 30 seconds. In some embodiments, during each ALD cycle, the semiconductor manufacturing equipment component 402 is exposed to the first precursor for about 0.05 seconds to about 3 seconds, the first reactant for about 0.05 seconds to about 3 seconds, and a purge is performed for about 1 second to about 10 seconds.

[0032]

[0037] In some embodiments, each ALD cycle is repeated 2, 3, 4, 5, 6, 8, about 10, about 12, or about 15 to about 18 times, about 20, about 25, about 30, about 40, about 50, about 65, about 80, about 100, about 120, about 150, about 200, about 250, about 300, about 350, about 400, about 500, about 800, about 1000, about 2000, about 3000, about 4000, about 5000, about 6000, or more times to form buffer layer 410. In embodiments, each ALD cycle is repeated until a predetermined thickness of buffer layer 410 is achieved.

[0033]

[0038] In some embodiments, the vapor deposition process is a CVD process, and the method includes simultaneously exposing the semiconductor manufacturing equipment component 402 to a first precursor and a first reactant to form the buffer layer 410. During an ALD process or a CVD process, the first precursor and the first reactant each may individually include one or more carrier gases. One or more purge gases may, in some examples, be flowed across the semiconductor manufacturing equipment component 402 and / or through the processing chamber between the exposure of the first precursor and the exposure of the first reactant, and the same gas may be used as the carrier gas and the purge gas. Exemplary carrier and purge gases may independently be or include one or more of nitrogen (N), argon, helium, neon, hydrogen (H), or any combination thereof.

[0034]

[0039] In embodiments, the buffer layer 410 can have a thickness of about 0.1 nm to 100 nm, e.g., about 0.2 nm, about 0.3 nm, about 0.4 nm, about 0.5 nm, about 0.8 nm, about 1 nm, about 2 nm, about 3 nm, about 5 nm, about 8 nm, about 10 nm, about 12 nm, or about 15 nm to about 18 nm, about 20 nm, about 25 nm, about 30 nm, about 40 nm, about 50 nm, about 60 nm, about 80 nm, about 100 nm, about 120 nm, about 150 nm, about 200 nm, about 300 nm, about 400 nm, about 500 nm, about 600 nm, about 700 nm, about 800 nm, or about 900 nm.

[0035]

[0040] In some embodiments, the first precursor contains one or more precursors. The first reactant contains one or more reducing agents, one or more oxidizing agents, one or more nitriding agents, one or more silicon precursors, one or more carbon precursors, or any combination thereof. In embodiments, the first reactant contains one reducing agent, one oxidizing agent, one nitriding agent, one silicon precursor, or one carbon precursor.

[0036]

[0041] In some embodiments, the first precursor is a titanium precursor and can include one or more of titanium cyclopentadiene compounds, one or more titanium amino compounds, one or more titanium alkyl compounds, one or more titanium alkoxy compounds, substitutions thereof, complexes thereof, adducts thereof, salts thereof, or any combination thereof. Exemplary titanium precursors can be or include bis(methylcyclopentadiene)dimethyltitanium ((MeCp)TiMe), bis(methylcyclopentadiene)methylmethoxytitanium, bis(cyclopentadiene)dimethyltitanium ((Cp)TiMe), tetra(tert-butoxy)titanium, titanium isopropoxide ((iPrO^Ti), tetrakis(dimethylamino)titanium (TDMAT), tetrakis(diethylamino)titanium (TDEAT), tetrakis(ethylmethylamino)titanium (TEMAT), isomers thereof, complexes thereof, adducts thereof, salts thereof, or any combination thereof. In some embodiments, the titanium precursor is a mixture of TiCl and HCl as by-products and TiNH x Cl y and adjuncts (where x and y are numbers).

[0037]

[0042] In one or more embodiments, the buffer layer 410 is a titanium-containing layer that can be or include metallic titanium, and the first reactant includes one or more reducing agents. Exemplary reducing agents can be or include hydrogen (H), ammonia, hydrazine, one or more hydrazine compounds, one or more alcohols, cyclohexadiene, dihydropyrazine, aluminum-containing compounds, adducts thereof, salts thereof, plasma derivatives thereof, or any combination thereof.

[0038]

[0043] In some implementations, buffer layer 410 is a titanium-containing layer that can be or include titanium oxide, and the first reactant contains one or more oxidizers. In other examples, buffer layer 410 is a yttrium-containing layer that can be or include yttrium oxide, and the first reactant contains one or more oxidizers. In further examples, buffer layer 410. Exemplary oxidizers can be or include water (e.g., steam), oxygen (O), atomic oxygen, ozone, nitrous oxide, one or more peroxides, one or more alcohols, plasmas thereof, or any combination thereof.

[0039]

[0044] In some embodiments, buffer layer 410 is a titanium-containing layer that may be or include titanium nitride, and the first reactant contains one or more nitriding agents.

[0040]

[0045] As shown in FIG. 3 , in block 340, an ALD process exposes a semiconductor manufacturing equipment component to a second precursor, such as an aluminum precursor described above, and a second reactant, such as a reactant described above, to form an aluminum-containing layer 420 on the buffer layer 410. In some embodiments, the buffer layer 410 and the aluminum-containing layer 420 have different compositions. In some examples, the first precursor is a different precursor than the second precursor, such that the first precursor is a source of a first type of metal and the second precursor is a source of a second type of metal, and the first type of metal and the second type of metal are different. For example, in some embodiments, the first type of metal does not include aluminum and the second type of metal includes aluminum, such as aluminum oxide.

[0041]

[0046] In embodiments, the second precursor may be or may include one or more aluminum precursors. In some embodiments, the second reactant may be or may include one or more reducing agents, one or more oxidizing agents, such as water, one or more nitriding agents, one or more silicon precursors, one or more carbon precursors, or any combination thereof, as described and illustrated above. During an ALD process, the aluminum precursor and the second reactant may each independently include one or more carrier gases. One or more purge gases may be flowed throughout the semiconductor manufacturing equipment component 402 and / or through the processing chamber between exposure of the first precursor and exposure of the first reactant. In some embodiments, the same gas may be used as both the carrier gas and the purge gas. Exemplary carrier gases and purge gases may independently be or include one or more of nitrogen (N), argon, helium, neon, hydrogen (H), or any combination thereof.

[0042]

[0047] In embodiments, aluminum-containing layer 420 contains aluminum oxide, aluminum nitride, or any combination thereof. In one or more embodiments, if buffer layer 410 contains or includes yttrium oxide, titanium oxide, titanium nitride, or a combination thereof, aluminum-containing layer 420 contains aluminum oxide or aluminum nitride.

[0043]

[0048] In an embodiment, each cycle of the ALD process includes exposing the semiconductor manufacturing equipment component 402 to an aluminum precursor, performing a purge, exposing the semiconductor manufacturing equipment component 402 to a second reactant, and performing a purge to form a second deposition layer, such as an aluminum-containing layer 420. The order of the second precursor and second reactant can be reversed.

[0044]

[0049] In an embodiment, during each ALD cycle, the semiconductor manufacturing equipment component 402 including the buffer layer 410 is exposed to the second precursor, e.g., an aluminum precursor, for about 0.05 seconds to about 10 seconds, the second reactant for about 0.05 seconds to about 10 seconds, and the purge can have a duration of about 0.5 seconds to about 30 seconds.

[0045]

[0050] In some embodiments, each ALD cycle is repeated 2, 3, 4, 5, 6, 8, about 10, about 12, or about 15 to about 18 times, about 20, about 25, about 30, about 40, about 50, about 65, about 80, about 100, about 120, about 150, about 200, about 250, about 300, about 350, about 400, about 500, about 800, about 1000, about 2,000, about 3,000, about 4,000, about 5,000, about 6,000 or more times to form the second deposition layer or aluminum-containing layer 220.

[0046]

[0051] In some embodiments, the second deposited layer, e.g., aluminum-containing layer 420, can have a thickness sufficient to protect semiconductor fabrication equipment component 402 from the harsh conditions mentioned herein. In some embodiments, aluminum-containing layer 420 can have a thickness of about 1.0 nm to 1,000 nm, e.g., about 1 nm, about 2 nm, about 3 nm, about 5 nm, about 8 nm, about 10 nm, about 12 nm, or about 15 nm to about 18 nm, about 20 nm, about 25 nm, about 30 nm, about 40 nm, about 50 nm, about 60 nm, about 80 nm, about 100 nm, about 120 nm, about 150 nm, about 200 nm, about 300 nm, about 400 nm, about 500 nm, about 600 nm, about 700 nm, about 800 nm, about 900 nm, about 950 nm, or about 1000 nm. In embodiments, the deposition cycle can be repeated until a desired or preselected thickness of the aluminum-containing layer is achieved.

[0047]

[0052] In an embodiment, the buffer layer is deposited to a thickness of up to 100 nm and the second deposited layer, for example aluminum oxide, is deposited to a thickness of up to 1,000 nm.

[0048]

[0053] In some embodiments, the aluminum-containing layer is subjected to further processing, such as annealing, to heat and densify the material of the aluminum-containing layer. The annealing process can be or can include a thermal anneal, a plasma anneal, an ultraviolet anneal, a laser anneal, or any combination thereof.

[0049]

[0054] In one or more embodiments, the protective coating, including the aluminum-containing layer 420 and the buffer layer 410, can have a relatively high uniformity. The protective coating can have a uniformity of less than 50%, less than 40%, or less than 30% of the thickness of the respective protective coating. In some embodiments, the aluminum-containing layer 420 and the buffer layer 410 can each have a relatively high uniformity requirement, such as less than 10%, or less than 5%, for example, 1 to 4.5%.

[0050]

[0055] In some embodiments, a method for depositing a coating on a semiconductor manufacturing equipment component includes: sequentially exposing a semiconductor manufacturing equipment component having a first surface comprising nickel or a nickel alloy to a first precursor and a first reactant by a first vapor deposition process to form a buffer layer having an upper surface on the first surface; and exposing an aluminum precursor and a second reactant by a second vapor deposition process to form an aluminum-containing layer on the upper surface. In some embodiments, the aluminum precursor is trimethylaluminum and the reactant is water. In some embodiments, the aluminum-containing layer is deposited on the upper surface to a thickness of 100 to 1000 nanometers. In some embodiments, the first vapor deposition process and the second vapor deposition process are atomic layer deposition (ALD) processes. In some embodiments, the first precursor is suitable for forming a buffer layer comprising yttrium oxide (YO), titanium oxide (TiO), or titanium nitride (TiN). In some embodiments, the second vapor deposition process is an atomic layer deposition (ALD) process, further comprising contacting the upper surface with an aluminum precursor at a temperature of 200 to 400° C. and a pressure of 1 to 10 Torr. In some embodiments, the aluminum-containing layer comprises or consists of Al2O3.

[0051]

[0056] In some embodiments, a suitable deposition chamber for depositing a buffer layer, such as buffer layer 410 and aluminum-containing layer 220 or aluminum-containing layer 420, is a deposition processing chamber configured to hold components or parts of a processing chamber, such as deposition processing chamber 500 available from Applied Materials, Inc., located in Santa Clara, Calif. In some embodiments, the coating deposition chamber is a batch reactor, and deposition of buffer layer 410 and aluminum-containing layer 220 or aluminum-containing layer 420 can be performed ex situ.

[0052]

[0057] In an embodiment, the deposition processing chamber 500 includes components that can be coated, in whole or in part, with the protective coating of the present disclosure. In an embodiment, the deposition processing chamber 500 can be part of the processing system shown in FIG. 6 , which includes multiple processing chambers connected to a central transfer chamber and serviced by a robot. The deposition processing chamber 500 includes walls 506, a bottom 508, and a lid 510 that define a process volume 512. The walls 506 and bottom 508 are typically fabricated from a monolithic block of aluminum, but may have the nickel or nickel alloy surfaces described above that are suitable for coating according to the present disclosure. The walls 506 can have conduits (not shown) therein through which a fluid can be passed to control the temperature of the walls 506. The deposition processing chamber 500 can also include a pumping ring 514 connecting the process volume 512 to an exhaust port 516 and other pumping components (not shown). A substrate support assembly 538, which can be heated, can be centrally located within the deposition processing chamber 500. The substrate support assembly 538 supports the substrate 503 during the deposition process. The substrate support assembly 538 is typically fabricated from aluminum, ceramic, or a combination of aluminum and ceramic, and typically includes a vacuum port (not shown) and at least one or more heating elements 532.

[0053]

[0058] In an embodiment, the vacuum port may be used to apply a vacuum between the substrate 503 and the substrate support assembly 538 and secure the substrate 503 to the substrate support assembly 538 during the deposition process. The one or more heating elements 532 may be, for example, electrodes disposed on the substrate support assembly 538 and coupled to a power source 530 to heat the substrate support assembly 538 and the substrate 503 positioned thereon to a predetermined temperature.

[0054]

[0059] In an embodiment, the substrate support assembly 538 is coupled to a stem 542. The stem 542 provides conduits for electrical wires, vacuum, and gas supply lines between the substrate support assembly 538 and other components of the deposition processing chamber 500. Additionally, the stem 542 couples the substrate support assembly 538 to a lift system 544 that moves the substrate support assembly 538 between a raised position (shown in FIG. 5 ) and a lowered position (not shown). A bellows 546 provides a vacuum seal between the process volume 512 and the atmosphere outside the deposition processing chamber 500 and facilitates movement of the substrate support assembly 538.

[0055]

[0060] The substrate support assembly 538 additionally supports a circumscribing shadow ring 548. The shadow ring 548 is annular in shape and typically comprises a ceramic material such as aluminum nitride. The shadow ring 548 generally prevents deposition on the edges of the substrate 503 and the substrate support assembly 538.

[0056]

[0061] The lid 510 is supported by the walls 506 and can be removed to allow for maintenance of the deposition processing chamber 500. The lid 510 can typically be constructed from aluminum and can additionally have heat transfer fluid channels 524 formed therein. The heat transfer fluid channels 524 are connected to a fluid source (not shown) that flows a heat transfer fluid through the lid 510. The fluid flowing through the heat transfer fluid channels 524 regulates the temperature of the lid 510.

[0057]

[0062] A mixing block 534 may be disposed on the lid 510. The mixing block 534 may be coupled to the gas sources 504. Typically, individual gas streams from the gas sources 504 may be combined in the mixing block 534. The gases are mixed into a single homogenous gas stream in the mixing block 534 and introduced into the process volume 512 after passing through a showerhead 518, which diffuses the gas stream outward toward the wall 506.

[0058]

[0063] The showerhead 518 may generally be coupled to the inside 520 of the lid 510. In embodiments, the showerhead 518 is constructed in whole or in part from nickel or a nickel alloy as described above, with the nickel or nickel alloy in a location suitable for coating according to the present disclosure. Optionally, a perforated shield plate 536 may be disposed in the space 522 between the showerhead 518 and the lid 510. Gases (i.e., process gases and other gases) can enter the deposition processing chamber 500 through a mixing block 534, and as the gases fill the space 522 behind the showerhead 518, they are first diffused by the shield plate 536. The gases then pass through the showerhead 518 and enter the deposition processing chamber 500. The shield plate 536 and the showerhead 518 are configured to provide a uniform flow of gases into the deposition processing chamber 500.

[0059]

[0064] In some embodiments, at least one of the lines supplying a process gas, such as a first or second precursor according to the present disclosure, from the gas source 504 to the deposition processing chamber 500 advantageously includes a valve (not shown) for diverting the gas flow, thereby eliminating the need to shut off the mass flow controller (MFC) of the precursor gas source while purging the deposition processing chamber 500. Diverting the precursor flow during the purge step, as opposed to shutting off the flow, reduces overall throughput time by eliminating the extra time required for the MFC to stabilize the precursor flow after each purge step.

[0060]

[0065] The deposition processing chamber 500 can be controlled by a microprocessor controller 554. The microprocessor controller can be one of any form of general-purpose computer processor or central processing unit (CPU) suitable for use in an industrial environment for the various chambers and sub-processors. The computer processor can use any suitable memory, such as random access memory, read-only memory, floppy disk drive, hard disk, or any other form of local or remote digital storage. Various support circuits can be coupled to the CPU to support the processor in a conventional manner. Software routines can be stored in memory or executed by a second CPU located remotely, as needed.

[0061]

[0066] The software routines are executed after the substrate is positioned on the substrate support. When executed, the software routines convert the general-purpose computer into a specific process computer that controls chamber operation so that a chamber process is performed. Alternatively, the software routines may be implemented in hardware, as an application-specific integrated circuit or other type of hardware implementation, or a combination of software and hardware.

[0062]

[0067] In embodiments, a deposition processing chamber is configured to deposit a coating on a semiconductor manufacturing equipment component, including sequentially exposing the semiconductor manufacturing equipment component, including nickel or a nickel alloy, to an aluminum precursor and a reactant via a deposition process to form an aluminum-containing layer on the surface of the semiconductor manufacturing equipment component. In embodiments, the deposition processing chamber is configured to deposit one or more layers of the present disclosure under the conditions described above. In embodiments, the chamber, e.g., deposition processing chamber 500, is sized to accommodate a part or portion of the deposition processing chamber 500 for the coating. The chamber also includes a microprocessor controller with a memory for a non-transitory computer-readable medium having instructions stored thereon, which, when executed, cause the chamber to deposit a coating on the semiconductor manufacturing equipment component by sequentially exposing the semiconductor manufacturing equipment component, including nickel or a nickel alloy, to an aluminum precursor and a reactant via a deposition process to form an aluminum-containing layer on the surface of the semiconductor manufacturing equipment component.

[0063]

[0068] In some embodiments, the present disclosure relates to a semiconductor manufacturing equipment component that includes an aluminum-containing layer disposed on a nickel or nickel alloy surface of the semiconductor manufacturing equipment component, where the semiconductor manufacturing equipment component is one or more of a showerhead, a wall, a lid, a ring, a bottom, a shield plate, or a substrate support assembly.

[0064]

[0069] In some embodiments, the present disclosure relates to a processing chamber including an aluminum-containing layer disposed on a nickel or nickel alloy surface of the processing chamber or a component thereof, the processing chamber including a component of a semiconductor manufacturing equipment, such as a showerhead, a wall, a lid, a ring, a bottom, a shield, or a substrate support assembly, or a combination thereof.

[0065]

[0070] The methods described herein can be performed in individual processing chambers, provided in stand-alone configurations, or as part of one or more cluster tools including chambers, components, or parts thereof coated according to the present disclosure, such as integrated tool 600 (i.e., cluster tool) described below with reference to FIG. 6. Examples of integrated tool 600 include the ENDURA®, CENTURA®, or PRODUCER® lines of processing systems available from Applied Materials, Inc. of Santa Clara, Calif. However, the methods described herein can be performed using other cluster tools coupled with suitable processing chambers or within other suitable processing chambers.

[0066]

[0071] The integrated tool 600 can include two load lock chambers 606A, 606B for transferring substrates into and out of the integrated tool 600. Typically, the integrated tool 600 is under vacuum, so the load lock chambers 606A, 606B can pump down the pressure in the load lock chambers when a substrate is introduced into the integrated tool 600. A first robot 610 can transfer substrates between the load lock chambers 606A, 606B and a first set of one or more substrate processing chambers 612, 614, 616, 618 (four shown) coupled to a first transfer chamber 650. Each substrate processing chamber 612, 614, 616, 618 can be equipped to perform multiple substrate processing operations. In some embodiments, the first set of one or more substrate processing chambers 612, 614, 616, 618 can include any combination of PVD chambers, ALD chambers, CVD chambers, etch chambers, degassing chambers, or pre-cleaning chambers. For example, in some embodiments, the processing chambers 612, 614, 616, 618 include two pre-cleaning chambers and two degassing chambers.

[0067]

[0072] The first robot 610 can also transfer substrates to / from two intermediate transfer chambers 622, 624. The intermediate transfer chambers 622, 624 can be used to maintain ultra-high vacuum conditions while allowing substrates to be transferred within the integrated tool 600. The second robot 630 can transfer substrates between the intermediate transfer chambers 622, 624 and a second set of one or more substrate processing chambers 632, 634, 635, 636, 638 coupled to a second transfer chamber 655. The substrate processing chambers 632, 634, 635, 636, 638 can be equipped to perform various substrate processing operations, including physical vapor deposition (PVD), chemical vapor deposition (CVD), etching, alignment, and other substrate processes, as well as the methods described above. In an embodiment, a cluster tool is configured to include chambers configured to form interconnect structures according to the present disclosure.

[0068]

[0073] In some embodiments, the disclosure relates to a non-transitory computer-readable medium having stored thereon instructions that, when executed, deposit a coating on a component of semiconductor manufacturing equipment by sequentially exposing a substrate comprising nickel or a nickel alloy to an aluminum precursor and a reactant in a deposition chamber via a deposition process to form an aluminum-containing layer on the surface of the component of semiconductor manufacturing equipment.

[0069]

[0074] In some embodiments, the disclosure relates to a non-transitory computer-readable medium having stored thereon instructions that, when executed, deposit a coating on a semiconductor manufacturing equipment component by sequentially exposing a semiconductor manufacturing equipment component having a first surface comprising nickel or a nickel alloy to a first precursor and a first reactant in a deposition chamber via a first vapor deposition process to form a buffer layer having an upper surface on the first surface; and exposing an aluminum precursor and a second reactant via a second vapor deposition process to form an aluminum-containing layer on the upper surface.

[0070]

[0075] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof.

Claims

1. 1. A method of depositing a coating on a component of semiconductor manufacturing equipment, comprising: sequentially exposing a semiconductor manufacturing equipment component comprising nickel or a nickel alloy to an aluminum precursor and a reactant by a deposition process to form an aluminum-containing layer on the surface of the semiconductor manufacturing equipment component. A method comprising:

2. 10. The method of claim 1, wherein the aluminum precursor is trimethylaluminum and the reactant is water.

3. The method of claim 1 , wherein the aluminum-containing layer is deposited to a thickness of 100 to 1000 nanometers.

4. The method of claim 1 , wherein the semiconductor manufacturing equipment component is a showerhead.

5. 10. The method of claim 1, wherein the deposition process is an atomic layer deposition (ALD) process, a plasma-enhanced ALD (PE-ALD) process, a thermal chemical vapor deposition (CVD) process, a plasma-enhanced CVD (PE-CVD) process, or any combination thereof.

6. 6. The method of claim 5, wherein the deposition process is an atomic layer deposition (ALD) process, the atomic layer deposition (ALD) process comprising contacting the semiconductor manufacturing equipment component with the aluminum precursor at a temperature of 100 to 450° C. and a pressure of 1 to 10 Torr.

7. 7. The method of claim 1, wherein the aluminum-containing layer is aluminum metal, aluminum oxide, aluminum nitride, aluminum silicide, aluminum carbide, or any combination thereof.

8. The aluminum-containing layer is aluminum oxide, and the aluminum oxide is Al ２ O ３ The method of claim 7, wherein

9. depositing a buffer layer directly onto a component of the semiconductor manufacturing equipment that includes nickel or a nickel alloy; and forming the aluminum-containing layer directly on the buffer layer; 7. The method of claim 1, further comprising:

10. The method of claim 9 , wherein the depositing is an atomic layer deposition (ALD) process.

11. The method of claim 9 , wherein the buffer layer comprises yttrium oxide, titanium oxide, titanium nitride, or a combination thereof.

12. 10. The method of claim 9, wherein the buffer layer forms an adhesion layer between the semiconductor manufacturing equipment component comprising nickel or a nickel alloy and the aluminum-containing layer.

13. the semiconductor manufacturing equipment component has a first surface comprising nickel or a nickel alloy, the deposition process is a second vapor deposition process, and the reactant is a second reactant; sequentially exposing the first surface to a first precursor and a first reactant via a first vapor deposition process to form a buffer layer on the first surface having an upper surface; and sequentially exposing the upper surface to the aluminum precursor and the second reactant via the second vapor deposition process to form the aluminum-containing layer on the upper surface. The method of claim 1 further comprising:

14. 14. The method of claim 13, wherein the aluminum precursor is trimethylaluminum and the second reactant is water.

15. The method of claim 13 , wherein the aluminum-containing layer is deposited on the top surface to a thickness of 100 to 1000 nanometers.

16. 14. The method of claim 13, wherein the first vapor deposition process and the second vapor deposition process are atomic layer deposition (ALD) processes.

17. 14. The method of claim 13, wherein the first precursor is suitable for forming the buffer layer comprising yttrium oxide (YO), titanium oxide (TiO), or titanium nitride (TiN).

18. 14. The method of claim 13, wherein the second vapor deposition process is an atomic layer deposition (ALD) process further comprising contacting the top surface with the aluminum precursor at a temperature of 100 to 450° C. and a pressure of 1 to 10 Torr.

19. The aluminum-containing layer is Al ２ O ３ or Al ２ O ３ The method of claim 13, comprising:

20. A component of a semiconductor manufacturing device, 1. A semiconductor manufacturing equipment component comprising: an aluminum-containing layer disposed on a nickel or nickel alloy surface of the semiconductor manufacturing equipment component, wherein the semiconductor manufacturing equipment component is one or more of a showerhead, a wall, a lid, a ring, a bottom, a shield plate, or a substrate support assembly.

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