Gas distribution plate with multiple zones for optimizing trench profile

Abstract

To provide a gas distribution plate with multiple zones for optimizing trench profile.SOLUTION: In a substrate processing system, a gas distribution apparatus for injecting process gas into a processing chamber includes an upper plate having a first hole and a plurality of second holes, and a lower plate 304. The lower plate has a recessed region 328 formed in either an upper surface 324 of the lower plate or a lower surface of the upper plate. The recessed region defines a plenum volume 332 between the upper and lower plates. The lower plate further includes a raised enclosure 336 located within the recessed region. The enclosure separates the plenum volume into a first plenum 340 and a second plenum 344, the first plenum is in fluid communication with a central hole in the upper plate and the second plenum is in fluid communication with a plurality of outer holes in the upper plate.SELECTED DRAWING: Figure 3B

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of U.S. Provisional Application No. 62 / 960,390, filed January 13, 2020, the entire disclosure of which is incorporated herein by reference.

[0002] The present disclosure relates to a gas distribution apparatus for injecting process gases into a processing chamber of a substrate processing system. [Background technology]

[0003] The background discussion provided herein is intended to generally present the context for the present disclosure. To the extent provided in this background section, aspects of the inventors' currently disclosed work and description that may not have qualified as prior art at the time of filing are not admitted expressly or impliedly to be prior art against the present disclosure.

[0004] Substrate processing systems may be used to perform etching, deposition, and / or other processing of substrates, such as semiconductor wafers. Exemplary processes that may be performed on a substrate include, but are not limited to, plasma-enhanced chemical vapor deposition (PECVD) processes, chemically enhanced plasma vapor deposition (CEPVD) processes, sputtering physical vapor deposition (PVD) processes, ion implantation processes, and / or other etching (e.g., chemical etching, plasma etching, reactive ion etching, etc.), deposition, and cleaning processes.

[0005] The substrate may be placed on a substrate support, such as a pedestal or electrostatic chuck (ESC), in a processing chamber of a substrate processing system, and a gas mixture containing one or more process gases may be introduced into the processing chamber. For example, in a plasma-based etching process, a gas mixture containing one or more precursors is introduced into the processing chamber and a plasma is struck to etch the substrate. Summary of the Invention

[0006] A gas distribution apparatus for a substrate processing system includes an upper plate having a first hole and a plurality of second holes, and a lower plate. The lower plate has a recessed area formed in one of an upper surface of the lower plate or a lower surface of the upper plate. The recessed area defines a plenum space between the upper plate and the lower plate. The lower plate further has a raised enclosure located within the recessed area. The enclosure separates the plenum space into a first plenum and a second plenum, the first plenum being in fluid communication with the first hole, and the second plenum being in fluid communication with the plurality of second holes.

[0007] In another feature, the upper plate has a receptacle, and the first hole and the plurality of second holes are located within the receptacle. The receptacle is configured to receive a central injector having a first channel and a second channel. The gas distribution device further has a central injector, and the first hole is centrally located within the receptacle, and the first channel is collinear and in fluid communication with the first hole. The second channel has an annular bottom that is collinear and in fluid communication with the plurality of second holes.

[0008] In other features, the first hole is located at the center of the upper plate, and the plurality of second holes are located radially outward from the first hole. The area of the first hole is substantially the same as the total area of the plurality of second holes. The first plenum and the second plenum are coplanar. The height of the enclosure is the same as the height of the outer portion of the corresponding one of the lower plate and the upper plate surrounding the recessed region.

[0009] In another feature, the first plenum has a plurality of first protrusions, and the enclosure has a plurality of second protrusions, each of which surrounds a respective one of the plurality of first protrusions. The first plenum has a cloverleaf shape having four lobes. The second plenum has a plurality of third protrusions located between adjacent pairs of the plurality of second protrusions of the enclosure. The enclosure has a zigzag path that connects adjacent pairs of the plurality of second protrusions and protrudes inward between adjacent pairs of the plurality of first protrusions. The zigzag path defines a flow path in each of the plurality of third protrusions. The flow path extends radially outward toward each of the plurality of third protrusions located between adjacent pairs of the plurality of first protrusions and adjacent pairs of the plurality of second protrusions. The radially inward end of the flow passage is collinear with the plurality of second holes.

[0010] In another feature, the lower plate has a plurality of first holes extending from the first plenum to the lower surface of the lower plate and a plurality of second holes extending from the second plenum to the lower surface of the lower plate, the plurality of second holes being located radially outward of the plurality of first holes.

[0011] A gas distribution apparatus for a substrate processing system includes an upper plate having a first hole and a plurality of second holes, and a lower plate. The lower plate has a recessed area formed in one of an upper surface of the lower plate or a lower surface of the upper plate. The recessed area defines a plenum space between the upper plate and the lower plate. The lower plate further has a plurality of grooves located in the recessed area and a plurality of sealing members located in each of the plurality of grooves. The plurality of sealing members separate the plenum space into a first plenum and a plurality of second plenums, the first plenum being in fluid communication with the first hole, and the plurality of second plenums being in fluid communication with the plurality of second holes.

[0012] In another feature, the plurality of sealing members are O-rings.

[0013] Further areas of applicability of the present disclosure will become apparent from the detailed description, the claims, and the drawings. The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the present disclosure.

[0014] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein: [Brief explanation of the drawings]

[0015] [Figure 1] FIG. 1 is a functional block diagram of an exemplary substrate processing system according to the principles of the present disclosure.

[0016] [Figure 2] 1 is a diagram of an exemplary gas distribution apparatus having two gas distribution zones in accordance with the principles of the present disclosure.

[0017] [Figure 3A] 1 illustrates an exemplary upper plate of a gas distribution apparatus according to the principles of the present disclosure. [Figure 3B] 1 illustrates an exemplary lower plate of a gas distribution apparatus according to the principles of the present disclosure.

[0018] [Figure 4A] 10 illustrates another exemplary lower plate of a gas distribution apparatus according to the principles of the present disclosure. [Figure 4B] 10 illustrates another exemplary lower plate of a gas distribution apparatus according to the principles of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0019] In the drawings, numbers may be reused to identify similar and / or identical elements.

[0020] In a substrate processing system, a gas mixture containing one or more process gases may be introduced into a processing chamber using a gas distribution apparatus. In some examples, the gas distribution apparatus includes a centrally located gas injector configured to inject gases into the processing chamber (e.g., using nozzles and / or flow distributors to distribute the gases). In other examples, the gas distribution apparatus includes a showerhead defining a plenum. Gases are supplied to the plenum and flow out of the plenum into the processing chamber through a plurality of holes configured in the surface or faceplate of the showerhead facing the substrate. The holes may be provided in various arrays or zones of the showerhead, and the distribution of gases may be biased depending on their respective distances from the central injection point of the holes.

[0021] A gas distribution device or gas distribution plate according to the present disclosure has two or more gas distribution zones. For example, the gas distribution device has two plates (e.g., an upper plate and a lower plate) and a plenum space defined between the upper and lower plates. An interface between the upper and lower plates is configured to separate the plenum space into a first plenum and a second plenum. Gas is introduced into the plenum through the upper plate. For example, a central injector is configured to separately supply gas to the plenum through respective holes in the upper plate. The interface maintains separation of the gas within the first plenum and the second plenum.

[0022] For example, the interface may correspond to a raised or recessed region formed in the upper surface of the lower plate. Conversely, the lower surface of the upper plate may be substantially flat. Thus, the recessed region in the upper surface of the lower plate defines the plenum. In some examples, the recessed region is formed in the lower surface of the upper plate, and the upper surface of the lower plate is substantially flat.

[0023] In another example, the plenum volume may correspond to a single recessed area formed in the upper surface of the lower plate or the lower surface of the upper plate. In this example, the recessed area may have multiple grooves that define respective zones and respective O-rings configured therein. The O-rings maintain gas separation within each zone defined by the grooves.

[0024] 1, an exemplary substrate processing system 100 for performing processes such as, but not limited to, deposition and (e.g., radio frequency, i.e., RF, plasma-based) etching is shown. The substrate processing system 100 includes a processing chamber 102 that contains other components of the substrate processing system 100. The substrate processing system 100 includes an upper electrode 104 and a substrate support 106, such as an electrostatic chuck (ESC). During operation, a substrate 108 is disposed on the substrate support 106.

[0025] By way of example only, the upper electrode 104 may include a gas distribution device, such as a showerhead 110, for introducing and distributing process gases into the processing chamber 102. In some examples, the showerhead 110 may have a stem portion 112, one end of which is connected to the top surface of the processing chamber 102. The stem portion 112 may represent a central injector configured to receive process gases and deliver the process gases through the showerhead 110 to the processing chamber 102.

[0026] The showerhead 110 is generally cylindrical and extends radially outward from the opposite end of the stem portion 112, away from the top surface of the processing chamber 102. The substrate-facing surface, or faceplate, of the showerhead 110 has a plurality of holes through which process or purge gases flow. In other examples, the showerhead 110 may be positioned next to or on top of the top surface of the processing chamber 102. In some examples, the showerhead 110 may be integrated into the processing chamber 102 and / or function as a lid for the processing chamber 102. The showerhead 110 according to the present disclosure has two or more gas distribution zones, which are described in more detail below.

[0027] The substrate support 106 has a conductive base plate 114 that acts as a lower electrode. The base plate 114 supports a ceramic layer 116, which may correspond to a ceramic heating plate. An RF generation system 120 generates and outputs an RF voltage to either the upper electrode 104 or the lower electrode (e.g., the base plate 114 of the substrate support 106). The other of the upper electrode 104 and the base plate 114 may be DC grounded, AC grounded, or floating. By way of example only, the RF generation system 120 may include an RF voltage generator 122 that generates an RF voltage, which is supplied to the upper electrode 104 or the base plate 114 by a matched distribution network 124. In other examples, the plasma may be generated inductively or remotely.

[0028] As described herein, the RF generation system 120 may correspond to a transformer coupled plasma (TCP) system. In other examples, the principles of the present disclosure may be implemented in other types of substrate processing systems, such as capacitively coupled plasma (CCP) systems, CCP cathodes, remote microwave plasma generation and distribution systems, etc.

[0029] The gas delivery system 130 includes one or more gas sources 132-1, 132-2, ..., and 132-N (collectively referred to as gas sources 132), where N is an integer greater than zero. The gas sources 132 provide and mix one or more precursors. The gas sources 132 may also provide a purge gas. Vaporized precursors may also be used. The gas sources 132 are connected to a manifold 140 via valves 134-1, 134-2, ..., and 134-N (collectively referred to as valves 134) and mass flow controllers 136-1, 136-2, ..., and 136-N (collectively referred to as mass flow controllers 136). The output of the manifold 140 is provided to the processing chamber 102. By way of example only, the output of the manifold 140 is provided to the showerhead 110.

[0030] Valves 150 and pumps 152 evacuate reactants from the processing chamber 102. A system controller 160 controls the components of the substrate processing system 100. A robot 170 delivers substrates onto and removes substrates from the substrate support 106. For example, the robot 170 may transfer substrates between the substrate support 106 and a load lock 172. Although the temperature controller 142 is shown as a separate controller, it may be implemented within the system controller 160.

[0031] 2 illustrates an exemplary gas distribution apparatus 200 (e.g., a showerhead) having two gas distribution zones according to the principles of the present disclosure. The gas distribution apparatus includes two plates (e.g., an upper plate 204 and a lower plate 208) and a plenum volume 212 defined between the upper plate 204 and the lower plate 208. A boundary (corresponding to a recessed region 216) between the upper plate 204 and the lower plate 208 is configured to separate the plenum volume 212 into a first plenum and a second plenum (not shown in FIG. 2). Gas is introduced into the plenum volume 212 through a plurality of holes 220 in the upper plate 204 using a central injector 224. For example, the upper plate 204 includes a recessed region, such as a socket or receptacle 226, configured to receive the central injector 224.

[0032] The central injector 224 is configured to separately supply gas to a first plenum and a second plenum of the plenum volume 212 via respective channels defined in the central injector. For example, the first channel 228 supplies gas to the first plenum through a first hole (e.g., a central hole) of the plurality of holes 220. Conversely, the second channel 232 supplies gas to the second plenum through two or more second holes (e.g., outer holes) of the plurality of holes 220. For example, the second channel 232 has an annular bottom 236 that is collinear with and in fluid communication with the plurality of holes 220.

[0033] The recessed region 216 has raised features (not shown in FIG. 2 but described in more detail below) configured to maintain separation of gases within the first and second plenums. For example, the recessed region 216 may be formed in the upper surface 240 of the lower plate 208, while the lower surface 244 of the upper plate 204 is substantially flat. In another example, the recessed region 216 may be formed in the lower surface 244 of the upper plate 204, while the upper surface 240 of the lower plate 208 is substantially flat. Gases supplied to the first and second plenums flow into the processing chamber through a plurality of holes 248 in the substrate-facing surface 252 or faceplate of the lower plate 208.

[0034] In this example, the lower plate 208 may be removable and replaceable to freely modify the configuration of the recessed region 216 and the first and second plenums defined within the plenum volume 212. In other words, the positions of the holes 220 in the upper plate 204 may be fixed, but various configurations of the lower plate 208 may be selected and configured depending on the desired configuration of the first and second plenums, the holes 248 in different configurations and with different flow patterns, etc. In some examples, the lower plate 208 may be replaced with a lower plate that defines only a single gas distribution zone. The lower plate 208 may be replaced due to wear and / or removed for repair, recoating, or resurfacing. By way of example only, the upper plate 204 and the lower plate 208 may be constructed of a ceramic (e.g., alumina, quartz, etc.), and the lower plate 208 may be coated with yttria. In some examples, the lower plate 208 may be supported on a carrier ring (not shown) disposed between the lower plate 208 and a sidewall of the processing chamber. For example, the lower plate 208 may be supported on a carrier ring as described in U.S. Provisional Application No. 63 / 081,252, filed September 21, 2020, the entire contents of which are incorporated herein by reference.

[0035] 3A and 3B, exemplary upper and lower plates 300, 304 are shown according to the present disclosure. The upper surface 308 of the upper plate 300 has a recessed region, such as a socket or receptacle 312, configured to receive a central injector (e.g., central injector 224 of FIG. 2). The receptacle 312 has a plurality of openings or holes (e.g., corresponding to holes 220), which are collinear with respective channels defined in the central injector 224. For example, the receptacle 312 has a central hole 316 that is collinear with the first channel 228 and a plurality of outer holes 320 that are collinear with the annular bottom 236 of the second channel 232 (e.g., located radially outward from the central hole 316). In this manner, gas supplied through first channels 228 flows through upper plate 300 via central hole 316, and gas supplied through second channels 232 flows through upper plate 300 via outer holes 320. The area of central hole 316 may be substantially the same as the overall area of outer holes 320 (e.g., within + / - 5% of the overall area) such that the gas flow through central hole 316 is substantially the same as the gas flow through outer holes 320.

[0036] The upper surface 324 of the lower plate 304 has a recessed region 328. The recessed region 328 defines a plenum volume 332 between the upper plate 300 and the lower plate 304. A raised pattern or feature (e.g., an "enclosure") 336 is configured to separate the plenum volume 332 into a first (e.g., inner) plenum 340 and a second (e.g., outer) plenum 344 (corresponding to the inner zone and the outer zone, respectively). The first plenum 340 and the second plenum 344 are coplanar. For example, the height of the enclosure 336 may be the same as the height of an outer portion 348 of the lower plate 304. Thus, the enclosure 336 and the outer portion 348 contact a lower surface 352 of the upper plate 300 to prevent gas leakage between the first plenum 340 and the second plenum 344. In other words, the enclosure 336 defines a barrier between the first plenum 340 and the second plenum 344 .

[0037] The first plenum 340 is in fluid communication with the central hole 316 and the first channel 228. Conversely, the second plenum 344 is in fluid communication with the plurality of outer holes 320 and the second channel 232. The enclosure 336 maintains separation between the gases supplied to the first plenum 340 and the second plenum 344. The gases supplied to the first plenum 340 flow into the processing chamber through the plurality of first holes 356. The gases supplied to the second plenum 344 flow into the processing chamber through the plurality of second holes 360.

[0038] The lower plate 304 may be removable and replaceable to freely modify the configuration of the recessed area 328, the enclosure 336, the first plenum 340, and / or the second plenum 344. In other words, the positions of the holes 316 and 320 in the upper plate 300 may be fixed, but different configurations of the lower plate 304 may be selected and set depending on the desired configuration of the first plenum 340 and its corresponding plurality of first holes 356 and the second plenum 344 and its corresponding plurality of second holes 360.

[0039] By way of example only, as shown, first plenum 340 has a cloverleaf pattern including four quadrants (e.g., lobes 364) surrounded by respective lobes 368 of enclosure 336. Gas supplied to first plenum 340 (e.g., at locations 370 collinear with central hole 316) flows outward to the respective lobes 364. Conversely, second plenum 344 has four quadrants or lobes 372 located between each adjacent pair of lobes 368 of enclosure 336. Adjacent pairs of lobes 368 of enclosure 336 are connected by inwardly projecting serpentine (e.g., zigzag) paths 376 that define respective flow paths 380 in lobes 372 of second plenum 344. Flow passages 380 extend radially inward from the protrusions 372 of the second plenum 344 between adjacent protrusions 368 of the enclosure 336 (or extend radially outward from a central region of the lower plate 304). Gas supplied to the second plenum 344 (e.g., at locations 382 collinear with corresponding ones of the outer holes 320) flows radially outward through the flow passages 380 to the respective protrusions 372.

[0040] As shown, first plenum 340 has four lobes 364 surrounded by four lobes 368 of enclosure 336, although in other examples lower plate 324 may have fewer (e.g., two or three) or more (e.g., five or more) lobes 364 and 368. Accordingly, lower plate 324 may have fewer (e.g., two or three) or more (e.g., five or more) lobes 372, serpentines 376, flow passages 380, etc.

[0041] Recessed region 328 thus defines two distinct gas distribution zones (e.g., a radially inner zone and a radially outer zone), corresponding to first plenum 340 and second plenum 344. Although gas is supplied centrally (e.g., via central injector 224), the gas is distributed evenly throughout first plenum 340 and second plenum 344.

[0042] In another example, the plenum volume may correspond to a single recessed area formed in the upper surface of the lower plate. In this example, the recessed area may have multiple grooves that define respective zones and respective O-rings configured therein. The O-rings maintain gas separation within each zone defined by the grooves. For example, referring now to FIGS. 4A and 4B, another exemplary lower plate 400 is shown having an upper surface 404 and a lower surface 408. The upper surface 404 of the lower plate 400 has a recessed area 412 that defines a plenum volume 416 between an upper plate (e.g., upper plate 300) and the lower plate 400.

[0043] 3A and 3B, recessed area 412 has a plurality of grooves 420 with respective sealing members, such as gaskets or O-rings 424, disposed within the grooves 420. O-rings 424 separate plenum volume 416 into a first (e.g., inner) plenum 428 and a second (e.g., outer) plenum 432, which correspond to the inner and outer zones, respectively. O-rings 424 and an outer portion 426 of upper surface 404 contact the lower surface of the upper plate to prevent gas leakage between first plenum 428 and second plenum 432. In other words, O-ring 424 provides a seal between first plenum 428 and second plenum 432.

[0044] In a gas distributor assembly including an upper plate (such as upper plate 300) and central injector 224, first plenum 428 is in fluid communication with central hole 316 and first channel 228. Conversely, second plenum 432 is in fluid communication with each of the plurality of outer holes 320 and second channel 232. Gas supplied to first plenum 428 flows into the processing chamber through the plurality of first holes 436. Gas supplied to second plenum 432 flows into the processing chamber through the plurality of second holes 440.

[0045] The foregoing description is merely illustrative and is not intended to limit the disclosure, its application, or uses in any way. The broad teachings of the present disclosure can be embodied in a variety of forms. Accordingly, while the present disclosure includes specific examples, the actual scope of the disclosure should not be so limited, as other modifications will become apparent from a study of the drawings, the specification, and the following claims. It should be understood that one or more steps of a method may be performed in a different order (or simultaneously) without altering the principles of the disclosure. Furthermore, although each embodiment has been described above as having particular features, any one or more of such features described with respect to any embodiment of the present disclosure can be implemented in any other embodiment and / or combined with features of any other embodiment, even if the combination is not explicitly set forth. In other words, the described embodiments are not mutually exclusive, and one or more embodiments may be substituted for one another and still be within the scope of the present disclosure.

[0046] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using various terms such as "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless expressly described as "direct," when a relationship between a first element and a second element is described in the above disclosure, the relationship may be a direct relationship with no other intervening elements between the first element and the second element, or it may be an indirect relationship with one or more intervening elements (spatially or functionally) between the first element and the second element. As used herein, the phrase at least one of A, B, and C should be interpreted in the logical sense of (A or B or C), using a non-exclusive logical OR, and not as "at least one of A and at least one of B and at least one of C."

[0047] In some embodiments, the controller is part of a system, which may be part of the examples described above. Such systems may include semiconductor processing equipment, including one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (such as wafer pedestals and gas flow systems). These systems may be integrated with electronics that control the operation of the system before, during, and after semiconductor wafer or substrate processing. The electronics may be referred to as a "controller" and may control various components or subparts of one or more systems. The controller may be programmed to control any of the processes disclosed herein, such as process gas delivery, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer into or out of the tool and other transfer tools and / or load locks connected to or bounding a particular system, depending on the processing requirements and / or type of system.

[0048] Generally, a controller may be defined as an electronic device having various integrated circuits, logic circuits, memory, and / or software that receives instructions, issues instructions, controls operations, enables cleaning operations, enables endpoint measurements, etc. The integrated circuits may include chips in firmware format that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operational parameters for performing specific processes on or for a semiconductor wafer or for a system. The operational parameters, in some embodiments, may be part of a recipe defined by a process engineer to accomplish one or more process steps in the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0049] In some embodiments, the controller may be part of or connected to a computer that is integral with, networked to, or a combination of the system. For example, the controller may be in the “cloud” or may be all or part of a fab host computer system that can enable remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, examine trends or performance metrics from multiple manufacturing operations, modify parameters of a current process, and set processing steps to follow a current process or begin a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network, which may include a local network or the Internet. The remote computer may include a user interface that allows entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data specifying parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool the controller is configured to interface with or control. Thus, as previously discussed, the controller may be distributed, such as by having one or more separate controllers networked together and functioning toward a common purpose, such as the processing and control described herein. An example of a distributed controller for this purpose would be one or more integrated circuits on a chamber that communicate with one or more integrated circuits located remotely (e.g., at the platform level or as part of a remote computer) that in combination control processing on the chamber.

[0050] Without limitation, exemplary systems may include a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system that may be associated with or used in the fabrication and / or production of semiconductor wafers.

[0051] As noted above, depending on the processing step or steps being performed by the tool, the controller may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used in material transport to and from tool locations and / or load ports within a semiconductor fabrication factory.

Claims

1. 1. A gas distribution apparatus for a substrate processing system, the gas distribution apparatus comprising: an upper plate having a first hole and a plurality of second holes; a lower plate, a recessed region formed in either (i) an upper surface of the lower plate or (ii) a lower surface of the upper plate, the recessed region defining a plenum space between the upper plate and the lower plate; and a raised enclosure located within the recessed area, the enclosure separating the plenum volume into a first plenum and a second plenum, the first plenum in fluid communication with the first holes and the second plenum in fluid communication with the plurality of second holes; A gas distribution device comprising:

2. 2. The gas distribution apparatus of claim 1, wherein the upper plate has a receptacle, and the first hole and the plurality of second holes are located within the receptacle.

3. The gas distribution apparatus of claim 2 , wherein the receptacle is configured to receive a central injector having a first channel and a second channel.

4. 4. The gas distribution apparatus of claim 3, further comprising the central injector, wherein the first hole is centrally located within the receptacle, and the first channel is collinear with and in fluid communication with the first hole.

5. The gas distribution apparatus of claim 4 , wherein the second channel has an annular bottom that is collinear with and in fluid communication with the plurality of second holes.

6. 2. The gas distribution apparatus of claim 1, wherein the first hole is located at a center of the upper plate and the plurality of second holes are located radially outward of the first hole.

7. 2. The gas distribution apparatus of claim 1, wherein an area of the first hole is substantially the same as a total area of the plurality of second holes.

8. 10. The gas distribution apparatus of claim 1, wherein the first plenum and the second plenum are coplanar.

9. 2. The gas distribution apparatus of claim 1, wherein the height of the enclosure is the same as the height of an outer portion of the corresponding one of the lower plate and the upper plate surrounding the recessed area.

10. 2. The gas distribution apparatus of claim 1, wherein the first plenum has a plurality of first protrusions and the enclosure has a plurality of second protrusions, each of the plurality of second protrusions surrounding a respective one of the plurality of first protrusions.

11. 11. The gas distribution apparatus of claim 10, wherein the first plenum is cloverleaf shaped with four lobes.

12. 11. The gas distribution apparatus of claim 10, wherein the second plenum has a plurality of third lobes located between adjacent pairs of the plurality of second lobes of the enclosure.

13. 13. The gas distribution apparatus of claim 12, wherein the enclosure has a zigzag path that connects adjacent pairs of the plurality of second protrusions and projects inwardly between adjacent pairs of the plurality of first protrusions.

14. The gas distribution apparatus of claim 13 , wherein the zigzag path defines a flow path to a corresponding one of the plurality of third lobes.

15. 15. The gas distribution apparatus of claim 14, wherein the flow paths extend radially outward between adjacent pairs of the plurality of first protrusions and between adjacent pairs of the plurality of second protrusions toward corresponding ones of the plurality of third protrusions.

16. 15. The gas distribution apparatus of claim 14, wherein a radially inward end of the flow passage is collinear with the second plurality of holes.

17. 2. The gas distribution apparatus of claim 1, wherein the lower plate has a plurality of first holes extending from the first plenum to a lower surface of the lower plate and a plurality of second holes extending from the second plenum to a lower surface of the lower plate.

18. 18. The gas distribution apparatus of claim 17, wherein the plurality of second holes are located radially outward of the plurality of first holes.

19. 1. A gas distribution apparatus for a substrate processing system, the gas distribution apparatus comprising: an upper plate having a first hole and a plurality of second holes; a lower plate; The lower plate is a recessed area formed in either (i) the upper surface of the lower plate or (ii) the lower surface of the upper plate, said recessed area defining a plenum space between said upper plate and said lower plate; and a plurality of grooves located within the recessed area; and a plurality of sealing members positioned in respective ones of the plurality of grooves; the plurality of sealing members separate the plenum volume into a first plenum and a plurality of second plenums, the first plenum being in fluid communication with the first holes, and the plurality of second plenums being in fluid communication with the plurality of second holes.

20. 20. The gas distribution apparatus of claim 19, wherein the plurality of sealing members are O-rings.

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