Semiconductor device and semiconductor module

Abstract

To provide a technique of enabling improvement of reliability of a semiconductor device by preventing an outer peripheral end of an organic protection film from becoming a start point of a leak path due to remaining moisture.SOLUTION: A semiconductor device 10 includes: a semiconductor substrate 1 where a cell part 11 and a termination part 12 are defined; an electrode 3 provided on an upper surface of the cell part 11 in the semiconductor substrate 1; a breakdown voltage holding structure 6 provided in the termination part 12 of the semiconductor substrate 1 and holding the breakdown voltage; an insulating protection film 2 covering an upper surface of the breakdown voltage holding structure 6; a water-proof film 4 covering at least the insulating protection film 2; and an organic protection film 5 covering a part of the water-proof film 4. A part of the electrode 3 on an outer peripheral end side runs onto a part of the insulating protection film 2 on an inner peripheral end side. A part of the organic protection film 5 on an inner peripheral end side exists on a part of the electrode 3 on an outer peripheral end side. An outer peripheral end of the organic protection film 5 exists on the inner peripheral side than the outer peripheral end of the insulating protection film 2.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor device and a semiconductor module. [Background technology]

[0002] For example, Patent Document 1 discloses a structure in which, in a silicon carbide semiconductor device, a polyimide protective film (corresponding to an organic protective film) is provided on an end region (corresponding to an end portion) of a semiconductor substrate via a protective oxide film (corresponding to an insulating protective film) and a silicon nitride film (corresponding to a waterproof film), and the outer peripheral end portion of the silicon nitride film is exposed from the polyimide protective film. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2023-27528 Summary of the Invention [Problem to be solved by the invention]

[0004] When a high-temperature, high-humidity bias (THB) test is performed on the semiconductor device described in Patent Document 1, cracks may occur in the silicon nitride film due to steps formed in the peripheral edge portion of the protective oxide film. Moisture that has penetrated the semiconductor device progresses through the polyimide protective film and accumulates in the cracks in the silicon nitride film, which then become the starting point of a leak path for the polyimide protective film. In this case, because the polyimide protective film is in contact with the semiconductor substrate on the high-voltage side, which is closer to the outer periphery than the termination region, applying a rated voltage exceeding the test application conditions during insulation testing after the test is completed can cause dielectric breakdown in the polyimide protective film.

[0005] Therefore, the present disclosure aims to provide a technology that can improve the reliability of semiconductor devices by preventing the outer peripheral edge of an organic protective film from becoming the starting point of a leak path caused by accumulated moisture. [Means for solving the problem]

[0006] The semiconductor device according to the present disclosure comprises a semiconductor substrate defining a cell portion through which a main current flows and an end portion surrounding the outer periphery of the cell portion, an electrode provided on an upper surface of the cell portion of the semiconductor substrate, a voltage-resistant structure provided on the end portion of the semiconductor substrate for maintaining a voltage resistance, an insulating protective film covering an upper surface of the voltage-resistant structure, a waterproof film covering at least the insulating protective film, and an organic protective film covering a portion of the waterproof film, wherein a portion of the electrode on the outer periphery side overlaps a portion of the insulating protective film on the inner periphery side, and a portion of the organic protective film on the inner periphery side overlaps a portion of the electrode on the outer periphery side, and the outer periphery end of the organic protective film is located more inward than the outer periphery end of the insulating protective film. [Effects of the Invention]

[0007] According to the present disclosure, since the outer peripheral edge of the organic protective film is separated from the semiconductor substrate, it is possible to prevent the outer peripheral edge of the organic protective film from becoming the starting point of a leak path due to accumulated moisture, which in turn suppresses dielectric breakdown of the organic protective film and improves the reliability of the semiconductor device. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view of a semiconductor module according to an embodiment; [Figure 2] 1 is a cross-sectional view of a main part of a semiconductor device according to an embodiment; [Figure 3] FIG. 1 is a cross-sectional view of a main part of a semiconductor device according to a related art. [Figure 4] FIG. 10 is a cross-sectional view showing a state before a reliability test of a semiconductor device according to a related art. [Figure 5] 1 is a cross-sectional view showing a state during a reliability test of a semiconductor device according to a related art; [Figure 6] 10 is a cross-sectional view showing a state during a characteristic inspection after a reliability test of a semiconductor device according to a related art; DETAILED DESCRIPTION OF THE INVENTION

[0009] <Embodiment> DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The following describes embodiments with reference to the accompanying drawings: Figure 1 is a cross-sectional view of a semiconductor module 100 according to an embodiment.

[0010] As shown in FIG. 1, the semiconductor module 100 includes a container 21, an insulating substrate 22, two semiconductor devices 10, wires 25, external electrodes 26a and 26b, and a sealing material 27.

[0011] The container body 21 includes a metal base plate 31 and a case 32. The case 32 is formed in a rectangular frame shape when viewed from above, and is attached to the peripheral edge of the metal base plate 31. The peripheral edge of the metal base plate 31 is attached to the lower end of the inner periphery of the case 32.

[0012] The insulating substrate 22 has an insulating layer 22b, a metal pattern 22a provided on the lower surface of the insulating layer 22b, and a circuit pattern 22c provided on the upper surface of the insulating layer 22b, and is bonded to a metal base plate 31 inside the container body 21 by a bonding material 24.

[0013] The semiconductor device 10 is mounted on an insulating substrate 22 via a bonding material 24. The bonding material 24 is a sintered bonding material containing silver or copper. Although two semiconductor devices 10 are shown in FIG. 1, the number of semiconductor devices 10 may be one or two or more. Furthermore, the number of external electrodes 26a, 26b is not limited to two.

[0014] One end of the external electrode 26a is attached to the case 32, and the other end of the external electrode 26a is bonded to one of the semiconductor devices 10 via a bonding material 24. One end of the external electrode 26b is attached to the case 32, and the other end of the external electrode 26b is bonded to the circuit pattern 22c of the insulating substrate 22 via a bonding material (not shown). The bonding material that bonds the external electrode 26b and the circuit pattern 22c is also a sintered bonding material containing silver or copper.

[0015] Wire 25 connects external electrode 26b to circuit pattern 22c of insulating substrate 22, and also connects semiconductor devices 10. Wire 25 also connects the other semiconductor device 10 to external electrode 26b.

[0016] The sealant 27 is filled in the case 32 of the container body 21 and seals the insulating substrate 22 and the semiconductor device 10. In other words, the sealant 27 covers the semiconductor device 10. The sealant 27 is a hardening gel.

[0017] Next, a description will be given of the semiconductor device 10. Fig. 2 is a cross-sectional view of a main part of the semiconductor device 10 according to the embodiment.

[0018] As shown in FIG. 2, the semiconductor device 10 includes a semiconductor substrate 1, an electrode 3, a voltage-resistant structure 6, an insulating protective film 2, a waterproof film 4, and an organic protective film 5.

[0019] The semiconductor substrate 1 is primarily made of silicon carbide. In other words, the semiconductor device 10 is a compound semiconductor device, more specifically, a silicon carbide semiconductor device. The semiconductor substrate 1 has a cell portion 11 and a termination portion 12 defined therein. The cell portion 11 is an active region through which current flows. Cells (not shown) for conducting current are provided in the cell portion 11. The cells are formed, for example, by implanting and diffusing any impurity into the semiconductor substrate 1, and semiconductor elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) or Junction Barrier Schottky (JBS) diodes are formed in the cells.

[0020] An electrode 3 is formed on the upper surface of the cell portion 11 to cover the cell portion 11. For example, an aluminum electrode or the like is formed via a barrier metal. As the main material of the electrode 3, a metal such as copper can be used instead of aluminum.

[0021] The termination section 12 is provided adjacent to the outer periphery of the cell section 11 so as to surround the outer periphery of the cell section 11. The termination section 12 is provided with a breakdown voltage holding structure 6 that holds the breakdown voltage, and a surplus region 13. The breakdown voltage holding structure 6 is located on the inner periphery of the termination section 12. The breakdown voltage holding structure 6 is formed, for example, by implanting and diffusing any impurity into the semiconductor substrate 1, and is, for example, a guard ring structure. The guard ring structure is made of multiple annular impurity layers and is formed in the flat semiconductor substrate 1. The surplus region 13 is provided adjacent to the outer periphery of the breakdown voltage holding structure 6 so as to cover the outer periphery of the breakdown voltage holding structure 6.

[0022] The breakdown voltage holding structure 6 and excess region 13 of the termination portion 12 are provided on the upper part of the semiconductor substrate 1. An insulating protective film 2 is provided on the upper surfaces of the breakdown voltage holding structure 6 and excess region 13 so as to cover the upper surfaces of the breakdown voltage holding structure 6 and excess region 13. The insulating protective film 2 is an insulating film made of, for example, silicon dioxide, and exhibits high insulating properties when provided on the flat upper surface of the semiconductor substrate 1. The insulating protective film 2 has a thickness of about 1 μm or more, and functions to insulate the termination portion 12 from the outside.

[0023] Compared to a silicon semiconductor device having a semiconductor substrate primarily made of silicon, semiconductor device 10, which is a silicon carbide semiconductor device, allows for cost reduction by downsizing the breakdown voltage holding structure 6, and covering the breakdown voltage holding structure 6 with an insulating protective film 2 makes it possible to further effectively downsize the breakdown voltage holding structure 6. In addition, in this case, to prevent the insulating protective film 2 from cracking and impairing insulation, it is desirable for the insulating protective film 2 to end at a position that does not reach the outer periphery of semiconductor substrate 1, which is susceptible to chipping. At the portion where the insulating protective film 2 contacts the cell portion 11, it is desirable for the electrode 3 to ride up on the insulating protective film 2. A waterproof film 4 is further provided on the insulating protective film 2.

[0024] The waterproof film 4 is formed of, for example, a film made of silicon nitride. The waterproof film 4 is preferably located on the outer periphery side of the insulating protective film 2 so as to cover the outer peripheral end portion of the electrode 3 located on the side of the termination portion 12 and the insulating protective film 2, but extends to a position that does not reach the dicing region located on the outer peripheral end of the semiconductor substrate 1.

[0025] The waterproof film 4 only covers the steps created by the insulating protective film 2, so it can be formed uniformly and exhibits high waterproofing. The waterproof film 4 has a higher film density than the insulating protective film 2, and prevents moisture that has penetrated into the semiconductor device 10 from progressing below the waterproof film 4. While a film made of silicon oxide can allow moisture to pass through and corrode the termination parts 12 such as the pressure-resistant holding structure 6, a film made of silicon nitride can effectively prevent moisture from entering. To protect the waterproof film 4, an organic protective film 5 is provided on the waterproof film 4, covering a portion of the waterproof film 4.

[0026] The organic protective film 5 is a protective film made of, for example, polyimide. The inner peripheral edge portion of the organic protective film 5 rides on the outer peripheral edge portion of the electrode 3 via the waterproof film 4. The outer peripheral edge of the organic protective film 5 is located more inward than the outer peripheral edge of the insulating protective film 2. The inner peripheral edge portion of the organic protective film 5 covers the outer peripheral edge portion of the electrode 3 to prevent foreign matter from coming into contact with the electrode 3 and reducing its insulation properties.

[0027] Furthermore, in semiconductor device 10, which is a silicon carbide semiconductor device, the width of termination portion 12 is shorter than that of a silicon semiconductor device, and creeping discharge is likely to occur when the semiconductor device is subjected to a shipping inspection or the like in an exposed state. Therefore, a device may be devised to increase the creeping distance by covering the outer peripheral portion of electrode 3 with organic protective film 5. Creeping discharge occurs, for example, between the low-voltage side where electrode 3 is exposed and the high-voltage side where semiconductor substrate 1 is exposed, and the required creeping distance varies depending on the conditions of shipping inspection of semiconductor device 10, etc. For this reason, the length of covering the outer peripheral portion of electrode 3 can also be set arbitrarily.

[0028] However, when the organic protective film 5 is subjected to a durability test in which a voltage is continuously applied in a humid environment, moisture may progress through the organic protective film 5, causing a leak path. For this reason, it is desirable to prevent the organic protective film 5 from coming into contact with the outer periphery of the semiconductor device 10 where the semiconductor substrate 1 is exposed.

[0029] As described above, the inner peripheral edge portion of the organic protective film 5 rides up on the electrode 3 and is in contact with the electrode 3 via the waterproof film 4. Although the waterproof film 4 also has insulating properties, it is difficult to prevent cracks from occurring due to steps or other imperfections at the portion where the film rides up on the electrode 3. At the corners of the electrode 3, there may be locations where the organic protective film 5 and the electrode 3 are in electrical contact. For example, stress tends to concentrate at the upper corners of the electrode 3, and coverage problems arise at the borders of the insulating protective film 2 when depositing the waterproof film 4 at the lower corners of the electrode 3, making it difficult to form the waterproof film 4 uniformly.

[0030] Furthermore, when an external force is applied to the semiconductor device 10 during handling or during the mounting process, minute cracks may occur, particularly in the waterproof film 4 which is a thin film on the electrodes 3, making it difficult to maintain insulation.

[0031] As described above, since the organic protective film 5 has a portion on the inner peripheral edge side thereof where it is in electrical contact with the electrode 3, if the organic protective film 5 is also in contact with a portion on the outer peripheral side of the semiconductor device 10 where the semiconductor substrate 1 is exposed, the insulating properties of the organic protective film 5 may be reduced by leak paths generated by moisture in the organic protective film 5. As a result, there is a possibility that dielectric breakdown of the organic protective film 5 may occur when a high voltage is applied after the moisture resistance and pressure test.

[0032] Here, contact also includes a state in which the organic protective film 5 and the semiconductor substrate 1 are in electrical contact through a gap created by a tiny crack or coverage at a location where the waterproof film 4 rides over a step in the insulating protective film 2 or the like.

[0033] Therefore, by avoiding contact between the organic protective film 5 and the semiconductor substrate 1 on the high-voltage side, it is possible to prevent the organic protective film 5 from becoming the starting point of a leak path. In order to avoid contact between the organic protective film 5 and the semiconductor substrate 1 on the high-voltage side, it is desirable that the outer circumferential edge of the organic protective film 5 be located closer to the inner circumferential side than the outer circumferential side of the insulating protective film 2.

[0034] Furthermore, on the high-voltage side, which is closer to the outer periphery of the termination portion 12, it is desirable to avoid the portion of the insulating protective film 2 covered by the organic protective film 5 climbing up onto a groove or step. Note that the groove or step refers to one created by patterning or the like, and it is particularly desirable to avoid a groove or step with a height difference greater than the thickness of the insulating protective film 2.

[0035] In the cell section 11, which is located more inward than the termination section 12, there may be steps around the gate structure, but since no voltage is applied to these sections when a withstand voltage is applied, the presence of steps does not pose a problem. The organic protective film 5 is provided for the purpose of protecting the withstand voltage holding structure 6 from external factors, and therefore it is desirable for it to extend further outward than the withstand voltage holding structure 6.

[0036] Furthermore, since the waterproof film 4 is provided for the purpose of preventing moisture from penetrating into the pressure-resistant structure 6, it is desirable for it to extend further outward than the pressure-resistant structure 6. Furthermore, to prevent the outer peripheral edge of the organic protective film 5 from becoming the starting point of a leak path, the waterproof film 4 needs to prevent moisture from penetrating below the insulating protective film 2 at the outer peripheral edge of the organic protective film 5. For this reason, it is desirable for the waterproof film 4 to extend further outward than the organic protective film 5. At the same time, it is desirable for the waterproof film 4 to extend further outward than the insulating protective film 2. There is a step at the outer peripheral edge of the insulating protective film 2, and cracks may occur in the waterproof film 4 at the step. However, because the outer peripheral edge of the organic protective film 5 is separated from the semiconductor substrate 1, it is possible to prevent the outer peripheral edge of the organic protective film 5 from becoming the starting point of a leak path due to accumulated moisture.

[0037] Next, the reliability test and characteristic inspection of a semiconductor module 100 incorporating the semiconductor device 10 will be described, in comparison with the case where a semiconductor device 10A according to the related art is incorporated. FIG. 3 is a cross-sectional view of a main part of the semiconductor device 10A according to the related art. FIG. 4 is a cross-sectional view showing the state of the semiconductor device 10A according to the related art before the reliability test. FIG. 5 is a cross-sectional view showing the state of the semiconductor device 10A according to the related art during the reliability test. FIG. 6 is a cross-sectional view showing the state of the semiconductor device 10A according to the related art during the characteristic inspection after the reliability test.

[0038] After the electrical characteristics test is performed on the semiconductor device 10, the semiconductor device 10 is mounted on a semiconductor module 100 as shown in Fig. 1. The semiconductor device 10 and the circuit pattern 22c, and the semiconductor device 10 and the external electrodes 26a are connected by solder bonding using a solder material or sinter bonding using a sinter bonding material containing silver or copper. As in this embodiment, the semiconductor device 10 is a silicon carbide semiconductor device, and if the semiconductor module 100 is to be used at high temperatures, it is desirable that the bonding material 24 be highly heat-resistant, such as a sinter bonding material.

[0039] Pressure is applied when joining the semiconductor device 10 by sinter bonding. If a foreign object gets caught between the semiconductor device 10 and the external electrode 26a when pressure is applied during sinter bonding between the semiconductor device 10 and the external electrode 26a, the electrodes 3 of the semiconductor device 10 will short-circuit, reducing the yield of the semiconductor module 100. However, because the outer peripheral portion of the electrode 3 is covered with the organic protective film 5, the occurrence of defective products can be reduced.

[0040] After connecting the semiconductor device 10 to the circuit pattern 22c, performing wire bonding, and connecting the external electrodes 26a and 26b, the sealing material 27 is filled in. The sealing material 27 is, for example, a hardening gel. By using a hardening gel, insulation can be easily ensured even for a relatively large semiconductor device 10, thereby achieving both manufacturability and reliability of the semiconductor device 10. However, because the gel easily allows moisture to penetrate, it is necessary to improve the moisture resistance, especially of the outer peripheral portion of the semiconductor device 10.

[0041] Here, a semiconductor device 10A according to the related art will be described. As shown in Fig. 2, in the semiconductor device 10, the outer peripheral edge of the organic protective film 5 is located more inward than the outer peripheral edge of the insulating protective film 2, whereas, as shown in Fig. 3, in the semiconductor device 10A, the outer peripheral edge of the organic protective film 5 is located more outward than the outer peripheral edge of the insulating protective film 2. More specifically, the inner peripheral edge of the organic protective film 5 contacts the electrode 3 via the waterproof film 4, and the outer peripheral edge of the organic protective film 5 contacts the semiconductor substrate 1 via the waterproof film 4. Other than this, the two structures are the same.

[0042] Various reliability tests are performed on the semiconductor module 100 to evaluate the risk of failure in the market. A typical test for evaluating moisture resistance is the H3TRB (High Voltage High Humidity High Temperature Reverse Bias) test. The H3TRB test is performed, for example, in an 85% RH humidity environment, applying a voltage of 80% of the rated voltage for 1000 hours, and then applying a voltage of 100% of the rated voltage after the test to check for characteristic fluctuations, breakdown, or degradation.

[0043] 4, in a semiconductor module equipped with the semiconductor device 10A, cracks 4a and 4b were generated in the waterproof film 4 at a portion thereof that overlaps the electrode 3 and a portion thereof that overlaps the insulating protective film 2 before a reliability test. Note that only the semiconductor device 10A is shown in FIGS. 4 to 6.

[0044] Next, as shown in Figure 5, after the reliability test, when a voltage of 85% of the rated withstand voltage was applied, a leak path 15 due to moisture occurred through cracks 4a and 4b. Next, as shown in Figure 6, during a characteristic inspection after the reliability test, that is, when a voltage of 100% of the rated withstand voltage was applied after the reliability test, dielectric breakdowns 16a and 16b occurred due to leak path 15 in some of the test samples. In other words, a failure occurred in which the organic protective film 5 suffered a dielectric breakdown.

[0045] In particular, the provision of the waterproof film 4 on the insulating protective film 2 makes the dielectric breakdown mode of the organic protective film 5 apparent. This result suggests that the waterproof film 4 does not provide insulation between the organic protective film 5 and the semiconductor substrate 1, and between the organic protective film 5 and the electrode 3. It is also speculated that the provision of the waterproof film 4 causes moisture that seeps in from the sealing material 27 to remain on the waterproof film 4 without moving to the underside of the insulating protective film 2, making it more susceptible to the occurrence of leak path 15 in the organic protective film 5.

[0046] On the other hand, in the semiconductor module 100 equipped with the semiconductor device 10 according to the embodiment, a structure is adopted in which the outer edge of the organic protective film 5 is fixed on the insulating protective film 2, and it has been confirmed that no dielectric breakdown of the organic protective film 5 originating from the leak path occurs after the reliability test.

[0047] As described above, the semiconductor device 10 according to the embodiment includes a semiconductor substrate 1 defining a cell portion 11 through which a main current flows and a termination portion 12 surrounding the outer periphery of the cell portion 11, an electrode 3 provided on the upper surface of the cell portion 11 in the semiconductor substrate 1, a voltage-resistant structure 6 provided in the termination portion 12 of the semiconductor substrate 1 and configured to maintain a withstand voltage, an insulating protective film 2 covering the upper surface of the voltage-resistant structure 6, a waterproof film 4 covering at least the insulating protective film 2, and an organic protective film 5 covering a portion of the waterproof film 4. A portion of the outer peripheral edge of the electrode 3 overlaps a portion of the inner peripheral edge of the insulating protective film 2. A portion of the inner peripheral edge of the organic protective film 5 overlaps a portion of the outer peripheral edge of the electrode 3. The outer peripheral edge of the organic protective film 5 is located more inward than the outer peripheral edge of the insulating protective film 2.

[0048] Therefore, since the outer peripheral edge of the organic protective film 5 is separated from the semiconductor substrate 1, it is possible to prevent the outer peripheral edge of the organic protective film 5 from becoming the starting point of a leak path 15 due to accumulated moisture. As a result, dielectric breakdown of the organic protective film 5 is suppressed, thereby improving the reliability of the semiconductor device 10.

[0049] Furthermore, the waterproof film 4 covers the outer peripheral end portion of the electrode 3 located on the terminal end side, and the inner peripheral end portion of the organic protective film 5 rides over the outer peripheral end portion of the electrode 3 via the waterproof film 4. Therefore, by having the organic protective film 5 protect the outer peripheral end portion of the electrode 3, it is possible to prevent foreign matter from coming into contact with the electrode 3 and causing a short circuit.

[0050] Furthermore, since the outer peripheral edge of the organic protective film 5 is located further outward than the outer peripheral edge of the pressure-resistant holding structure 6, and the outer peripheral edge of the waterproof film 4 is located further outward than the outer peripheral edge of the organic protective film 5, moisture can be prevented from penetrating underneath the insulating protective film 2.

[0051] Furthermore, since the outer peripheral edge of the waterproof film 4 is located further outward than the outer peripheral edge of the insulating protective film 2, it is possible to prevent moisture from penetrating below the insulating protective film 2.

[0052] The semiconductor module 100 includes the semiconductor device 10 and a sealing material 27 that covers the semiconductor device 10, the sealing material 27 being a hardening gel. Therefore, insulation can be easily ensured even for a relatively large semiconductor device 10, and the semiconductor device 10 can be made both manufacturable and reliable.

[0053] The semiconductor module 100 also includes an external electrode 26a connected to the semiconductor device 10 via a bonding material 24, and the bonding material 24 is a sintered bonding material. Pressure is applied when bonding the semiconductor device 10 by sinter bonding. If a foreign object is caught between the semiconductor device 10 and the external electrode 26a when pressure is applied during sinter bonding between the semiconductor device 10 and the external electrode 26a, the electrodes 3 of the semiconductor device 10 may short-circuit, reducing the yield of the semiconductor module 100. However, because the outer peripheral portion of the electrode 3 is covered with the organic protective film 5, the occurrence of defective products can be reduced.

[0054] Furthermore, the semiconductor device 10 is a compound semiconductor device. More specifically, the semiconductor device 10 is a silicon carbide semiconductor device. In a compound semiconductor device, it is possible to shorten the width of the termination portion 12. However, shortening the width of the termination portion 12 increases the electric field applied to the organic protective film 5, causing a leak path 15 in the organic protective film 5 and increasing the likelihood of the organic protective film 5 being destroyed in a subsequent rated voltage test. As described above, in the embodiment, dielectric breakdown of the organic protective film 5 is suppressed, and therefore the width of the termination portion 12 can be shortened to reduce the cost of the semiconductor device 10 and increase the reliability of the semiconductor device 10.

[0055] The embodiments can be modified or omitted as appropriate.

[0056] Various aspects of the present disclosure are summarized below as appendices.

[0057] (Appendix 1) a semiconductor substrate defining a cell portion through which a main current flows and a termination portion surrounding the outer periphery of the cell portion; an electrode provided on an upper surface of the cell portion of the semiconductor substrate; a breakdown voltage holding structure provided at the terminal portion of the semiconductor substrate and holding a breakdown voltage; an insulating protective film covering an upper surface of the voltage-resistant structure; a waterproof film covering at least the insulating protective film; an organic protective film covering a portion of the waterproof film; a portion of the electrode on the outer circumferential end side thereof overlaps a portion of the insulating protective film on the inner circumferential end side thereof, an inner peripheral end portion of the organic protective film extends over an outer peripheral end portion of the electrode; The semiconductor device, wherein the outer peripheral edge of the organic protective film is located more inward than the outer peripheral edge of the insulating protective film.

[0058] (Appendix 2) the waterproof membrane covers a portion of the electrode on the outer circumferential end side located on the terminal end side, 2. The semiconductor device according to claim 1, wherein an inner peripheral end portion of the organic protective film extends over an outer peripheral end portion of the electrode via the waterproof film.

[0059] (Appendix 3) the outer peripheral edge of the organic protective film is located on the outer peripheral side of the outer peripheral edge of the voltage-resistant holding structure, 3. The semiconductor device according to claim 1, wherein the outer peripheral edge of the waterproof film is located more outer than the outer peripheral edge of the organic protective film.

[0060] (Appendix 4) 4. The semiconductor device according to claim 1, wherein the outer peripheral edge of the waterproof film is located more outer than the outer peripheral edge of the insulating protective film.

[0061] (Appendix 5) A semiconductor device according to any one of Supplementary Note 1 to Supplementary Note 4; a sealing material that covers the semiconductor device, The semiconductor module, wherein the encapsulant is a hardening gel.

[0062] (Appendix 6) Further, an external electrode is connected to the semiconductor device via a bonding material, 6. The semiconductor module according to claim 5, wherein the bonding material is a sintered bonding material.

[0063] (Appendix 7) 7. The semiconductor module according to claim 5, wherein the semiconductor device is a compound semiconductor device.

[0064] (Appendix 8) 8. The semiconductor module according to claim 7, wherein the semiconductor device is a silicon carbide semiconductor device. [Explanation of symbols]

[0065] 1 semiconductor substrate, 2 insulating protective film, 3 electrode, 4 waterproof film, 5 organic protective film, 6 pressure-resistant structure, 10 semiconductor device, 11 cell portion, 12 termination portion, 24 bonding material, 26a, 26b external electrodes, 27 sealing material, 100 semiconductor module.

Claims

1. a semiconductor substrate defining a cell portion through which a main current flows and a termination portion surrounding the outer periphery of the cell portion; an electrode provided on an upper surface of the cell portion of the semiconductor substrate; a breakdown voltage holding structure provided at the terminal portion of the semiconductor substrate and holding a breakdown voltage; an insulating protective film covering an upper surface of the voltage-resistant structure; a waterproof film covering at least the insulating protective film; an organic protective film covering a portion of the waterproof film; a portion of the electrode on the outer circumferential end side thereof overlaps a portion of the insulating protective film on the inner circumferential end side thereof, an inner peripheral end portion of the organic protective film extends over an outer peripheral end portion of the electrode; The semiconductor device, wherein the outer peripheral edge of the organic protective film is located more inward than the outer peripheral edge of the insulating protective film.

2. the waterproof membrane covers a portion of the electrode on the outer circumferential end side located on the terminal end side, 2. The semiconductor device according to claim 1, wherein an inner peripheral edge portion of said organic protective film extends over said outer peripheral edge portion of said electrode via said waterproof film.

3. the outer peripheral edge of the organic protective film is located on the outer peripheral side of the outer peripheral edge of the voltage-resistant holding structure, The semiconductor device according to claim 1 , wherein an outer peripheral edge of said waterproof film is located on the outer peripheral side of said outer peripheral edge of said organic protective film.

4. The semiconductor device according to claim 3 , wherein the outer peripheral edge of the waterproof film is located on the outer peripheral side of the outer peripheral edge of the insulating protective film.

5. A semiconductor device according to any one of claims 1 to 4; a sealing material that covers the semiconductor device, The semiconductor module, wherein the encapsulant is a hardening gel.

6. Further, an external electrode is connected to the semiconductor device via a bonding material, The semiconductor module according to claim 5 , wherein the bonding material is a sintered bonding material.

7. 6. The semiconductor module according to claim 5, wherein the semiconductor device is a compound semiconductor device.

8. 8. The semiconductor module according to claim 7, wherein the semiconductor device is a silicon carbide semiconductor device.

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