Semiconductor device, power conversion device, and manufacturing method of semiconductor device

Abstract

To provide a semiconductor device in which a case member is bonded to a base member, capable of irradiating an adhesive material with ultraviolet rays after the case member is bonded to the base member regardless of a material of the case member.SOLUTION: A semiconductor device comprises: a power device 20 on which a semiconductor element 22 is mounted; a heat sink 30 that supports the power device 20; and a module case 10 that is bonded to the heat sink 30 via an ultraviolet curing adhesive material 50. The semiconductor device includes an ultraviolet scattering part 31 that is provided in the heat sink 30 and scatters an ultraviolet light L toward the adhesive material 50, and the module case 10 includes an ultraviolet passage 12 through which the ultraviolet light L passes from the outside of the module case 10 toward the ultraviolet scattering part 31.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device, a power conversion device, and a method for manufacturing a semiconductor device. [Background technology]

[0002] For example, Patent Document 1 discloses an optical module comprising a can and a barrel. In the optical module disclosed in Patent Document 1, the barrel is made of a material that transmits ultraviolet light. The method of manufacturing the optical module disclosed in Patent Document 1 involves bonding the can and barrel together with an ultraviolet-curable resin, and then irradiating the ultraviolet-curable resin with ultraviolet light through the barrel. This hardens the ultraviolet-transparent resin, fixing the can and barrel together. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-139877 Summary of the Invention [Problem to be solved by the invention]

[0004] Incidentally, in a semiconductor device of a power module included in a power conversion device or the like mounted on a vehicle, a case member surrounding a substrate is fixed to a base member supporting a substrate on which a semiconductor is mounted. The case member is fixed to the base member via an adhesive. For example, in such a semiconductor device, if an ultraviolet-curable adhesive is used to bond the case member to the base member as in Patent Document 1, the case member needs to be formed from a material that is transparent to ultraviolet light. However, depending on the semiconductor device, it may be difficult to form the case member from a material that is transparent to ultraviolet light. In such cases, the case member is bonded to the base member after the adhesive is irradiated with ultraviolet light to start curing, and therefore, measures such as ensuring a long curing time are required to obtain the required bonding strength.

[0005] The present invention has been made in consideration of the above-mentioned problems, and aims to make it possible to irradiate ultraviolet light onto the adhesive in a semiconductor device in which a case member is adhered to a base member, regardless of the material of the case member, after the case member is adhered to the base member. [Means for solving the problem]

[0006] The present invention employs the following configuration as a means for solving the above problems.

[0007] A first aspect of the present invention is a semiconductor device comprising: a substrate on which a semiconductor element is mounted; a base member supporting the substrate; and a case member adhered to the base member via an ultraviolet-curing adhesive; a UV scattering section provided on the base member that scatters ultraviolet light toward the adhesive; and the case member having an ultraviolet light passage that allows ultraviolet light to pass from the outside of the case member toward the ultraviolet light scattering section.

[0008] A second aspect of the present invention is a method for manufacturing a semiconductor device comprising a case member that is adhered via an adhesive to a base member that supports a substrate on which a semiconductor element is mounted, and the method comprises the steps of: a case member placement process in which a case member having an ultraviolet light passage that passes ultraviolet light from the outside of the case member toward the ultraviolet light scattering section is placed on the base member that is provided with an ultraviolet light scattering section that scatters ultraviolet light, via the ultraviolet light curing adhesive before hardening; and an ultraviolet light irradiation process in which the ultraviolet light is irradiated onto the ultraviolet light scattering section through the ultraviolet light passage, thereby irradiating the adhesive with ultraviolet light. [Effects of the Invention]

[0009] According to the present invention, even after the case member is bonded to the base member, ultraviolet light can be irradiated onto the adhesive by irradiating the ultraviolet light scattering portion through the ultraviolet light passage provided in the case member. Therefore, according to the present invention, in a semiconductor device in which the case member is bonded to the base member, ultraviolet light can be irradiated onto the adhesive after the case member is bonded to the base member, regardless of the material of the case member. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a circuit diagram showing a schematic electrical configuration of a power conversion device according to a first embodiment of the present invention. [Figure 2] 1 is an exploded perspective view showing a schematic structural configuration of a power conversion device according to a first embodiment of the present invention. [Figure 3] FIG. 1 is a schematic exploded perspective view of a power module included in an intelligent power module according to a first embodiment of the present invention. [Figure 4] 4 is a cross-sectional view taken along the line AA in FIG. 3. [Figure 5] 2A to 2C are schematic diagrams illustrating a method for manufacturing a power module according to the first embodiment of the present invention. [Figure 6] 2A to 2C are schematic diagrams illustrating a method for manufacturing a power module according to the first embodiment of the present invention. [Figure 7] 2A to 2C are schematic diagrams illustrating a method for manufacturing a power module according to the first embodiment of the present invention. [Figure 8] FIG. 10 is a schematic cross-sectional view showing a schematic configuration of an ultraviolet scattering section included in a power module according to a second embodiment of the present invention. [Figure 9] FIG. 10 is a schematic cross-sectional view showing a schematic configuration of an ultraviolet scattering section included in a power module according to a third embodiment of the present invention. [Figure 10] FIG. 10 is a schematic cross-sectional view showing a schematic configuration of an ultraviolet scattering section included in a power module according to a fourth embodiment of the present invention. [Figure 11]FIG. 10 is a horizontal cross-sectional view showing a schematic configuration of an adhesive portion between a module case and a heat sink in a fifth embodiment of the present invention. [Figure 12] 12 is a cross-sectional view of FIG. 11 taken along line B-B. DETAILED DESCRIPTION OF THE INVENTION

[0011] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a semiconductor device power converter and a method for manufacturing a semiconductor device according to the present invention will be described below with reference to the drawings.

[0012] (First embodiment) FIG. 1 is a circuit diagram showing a schematic electrical configuration of a power conversion device 1 of this embodiment. The power conversion device 1 of this embodiment is mounted on a vehicle such as an electric automobile, and is provided between a motor M and a battery B. The power conversion device 1 of this embodiment performs power conversion between the motor M and the battery B. For example, the power conversion device 1 of this embodiment converts DC power supplied from the battery B into three-phase AC power and supplies it to the motor M. The power conversion device 1 also converts regenerative power (AC power) from the motor M into DC power and supplies it to the battery B.

[0013] As shown in Fig. 1, the power conversion device 1 of this embodiment has a power conversion circuit H. As described above, the power conversion circuit H converts DC power into AC power. Furthermore, the power conversion circuit H converts AC power into DC power. Such a power conversion circuit H includes a capacitor C and an inverter circuit E. Note that the power conversion device 1 may also include, for example, a step-up / step-down converter or a DC / DC converter (not shown). Furthermore, if the vehicle has multiple motors M, the power conversion device 1 may also include multiple inverter circuits E.

[0014] The power conversion device 1 of this embodiment also includes conductive lines BU through which power is conducted. For example, the power conversion device 1 of this embodiment includes a conductive line BU that connects the inverter circuit E and the battery B, and a conductive line BU that connects the inverter circuit E and the motor M.

[0015] As shown in FIG. 1, the inverter circuit E has three legs R corresponding to the respective phases of the motor M. Each leg R has an upper arm HA and a lower arm LA. The upper arm HA is connected to the positive side of a battery B via a conductive line BU. The lower arm LA is connected to the negative side of the battery B via a conductive line BU. The upper arm HA and the lower arm LA are connected in series. An output terminal that connects the legs R and the motor M is connected between the upper arm HA and the lower arm LA.

[0016] As shown in FIG. 1, the power conversion device 1 of this embodiment includes power devices 20 (substrates on which semiconductor elements are mounted) corresponding to each leg R. That is, in this embodiment, the power conversion device 1 includes three power devices 20. Each power device 20 includes a power transistor corresponding to the upper arm HA and a power transistor corresponding to the lower arm. That is, in this embodiment, each power device 20 includes two power transistors. Each of these power transistors is formed using a plurality of semiconductor elements.

[0017] FIG. 2 is an exploded perspective view showing a schematic structural configuration of the power conversion device 1 of this embodiment. As shown in FIG. 2, the power conversion device 1 of this embodiment includes an inverter case 2, an intelligent power module 3, and a capacitor unit 4. The power conversion device 1 may also include other components, such as a reactor unit forming a step-up / step-down circuit and a DC-DC converter unit forming a DC-DC converter. When a plurality of inverter circuits E are included, the power conversion device 1 may also include a plurality of intelligent power modules 3. The power conversion device 1 may also include a step-up / step-down circuit unit separate from the intelligent power module 3.

[0018] The inverter case 2 is a case that houses the intelligent power module 3, the capacitor unit 4, etc., and includes a center plate 2a and a case cover 2b. The center plate 2a and the case cover 2b are formed as separate parts that can be detached from each other. In FIG. 2, the case cover 2b is shown separated from the center plate 2a and positioned above it. However, the installation posture of the power conversion device 1 is not particularly limited. In other words, the power conversion device 1 may be mounted on a vehicle so that the case cover 2b is positioned to the side of the center plate 2a.

[0019] The central plate 2a has a bottom wall to which the intelligent power modules 3 and the capacitor units 4 are fixed, and side walls that surround the intelligent power modules 3 and the capacitor units 4. In other words, the central plate 2a is formed in the shape of a container that is open on the case cover 2b side. Such central plate 2a is provided with water channels as necessary, and is formed to be able to guide the coolant that cools the intelligent power modules 3 and the capacitor units 4.

[0020] The case cover 2b is fixed to the center plate 2a and covers the intelligent power module 3 and the capacitor unit 4. That is, the intelligent power module 3 and the capacitor unit 4 are exposed when the case cover 2b is detached from the center plate 2a.

[0021] Such an inverter case 2 is fixed to, for example, a housing (not shown) that covers the motor M or a gear case that houses a gear that transmits power generated by the motor M to the outside. In such a case, for example, the center plate 2a is fastened to the motor housing or the gear case using a bolt (not shown) or the like. Note that if the housing that covers the motor M has a space for accommodating the power conversion device 1, the case cover 2b may be omitted.

[0022] The inverter case 2 also holds bus bars that form part or all of the conductive line BU (see Figure 1) that connects the battery B to the intelligent power module 3 and the capacitor unit 4, and the conductive line BU (see Figure 1) that connects the intelligent power module 3 to the motor M.

[0023] The intelligent power module 3 includes a power module 3a (semiconductor device) and a board unit 3b (control board). The power module 3a is a module provided with a plurality of power devices 20 (described later). In other words, the power module 3a forms an inverter circuit E with the plurality of power devices 20.

[0024] The board unit 3b is stacked on the power module 3a. This board unit 3b includes, for example, a gate driver board and an ECU (Electronic Control Unit) board. The gate driver board is a board provided with a gate driver that generates a drive signal for the inverter circuit E formed by the power module 3a. The ECU board is a board provided with an ECU that controls the gate driver board. Such a board unit 3b controls the power device 20.

[0025] The capacitor unit 4 is a unit that houses a capacitor element therein. The capacitor unit 4 is connected to the power module 3a. The capacitor unit 4 forms the capacitor C shown in FIG.

[0026] 3 is a schematic exploded perspective view of a power module 3a included in the intelligent power module 3. As shown in this figure, the power module 3a includes a module case 10 (case member), the above-mentioned power device 20 (substrate), a heat sink 30 (base member), and a lead frame 40.

[0027] The module case 10 is fixed to the heat sink 30 and houses the power devices 20 and the like. The module case 10 has an opening 11 for each power device 20 to house the power device 20.

[0028] Fig. 4 is a schematic cross-sectional view of the power module 3a in which one power device 20 is enlarged, taken along the line AA in Fig. 3. As shown in Fig. 4, the module case 10 is fixed onto the heat sink 30 via an adhesive 50. Such a module case 10 is fixed to the surface 30a of the heat sink 30 so as to surround each power device 20.

[0029] The power conversion device 1 of this embodiment also includes a bus bar 60 (conductive member) that is molded into the module case 10 and thereby held in the module case 10. The bus bar 60 is connected to the power device 20 via the lead frame 40. In this embodiment, the power conversion device 1 of this embodiment includes a bus bar 60 (hereinafter referred to as bus bar 61) that conducts power between the battery B and the power device 20, and a bus bar 60 (hereinafter referred to as bus bar 62) that conducts power between the power device 20 and the motor M.

[0030] The bus bar 61 is molded into the module case 10 with a connection terminal 61a on the battery B side and a portion where the lead frame 40 is joined exposed from the module case 10. The connection terminal 61a is connected to the capacitor unit 4 and a power supply terminal (not shown), and is connected to the battery B via the power supply terminal.

[0031] The bus bar 62 is molded into the module case 10 with a connection terminal 62a on the motor M side and a portion where the lead frame 40 is joined exposed from the module case 10. The connection terminal 62a is connected to the motor M.

[0032] As shown in FIG. 3 , the power conversion device 1 of this embodiment includes a control terminal 70 molded in the module case 10. The control terminal 70 is molded in the module case 10 in an L-shaped bent state. One end of the control terminal 70 protrudes upward from the module case 10. This one end of the control terminal 70 is inserted into a through-hole provided in the board unit 3b and is electrically connected to the board unit 3b. The other end of the control terminal 70 is arranged so as to be exposed upward at the opening 11. The other end of such a control terminal 70 is connected to the power device 20 by a bonding wire (not shown). A plurality of such control terminals 70 are contained within the module case 10.

[0033] Furthermore, in the power converter 1 of this embodiment, the module case 10 is provided with a plurality of ultraviolet ray passages 12 that penetrate in the vertical direction (the stacking direction of the heat sink 30 and the module case 10), as shown in Fig. 4. These ultraviolet ray passages 12 are provided so as to be arranged in an annular shape at intervals with respect to the frame-shaped module case 10, as shown in Fig. 3.

[0034] These ultraviolet light passages 12 are passages through which ultraviolet light passes to harden the adhesive 50 when manufacturing the power module 3a. That is, in this embodiment, the module case 10 is provided with passages through which ultraviolet light passes from the outside of the module case 10 in the stacking direction of the heat sink 30 and the module case 10.

[0035] 4, a portion of the ultraviolet ray passing passage 12 is located below the connection terminal 61a of the bus bar 61. The ultraviolet ray passing passage 12 located below the connection terminal 61a is used as a mounting hole 12a for a screw 5 (see FIG. 2) which is a fastening member for fastening the bus bar 61 to the terminal 4a (external terminal) of the capacitor unit 4. The ultraviolet ray passing passage 12 used as such a mounting hole 12a has, for example, a female thread formed on the inner wall surface into which the screw 5 can be screwed.

[0036] 3 and 4, the heat sink 30 has an ultraviolet ray scattering section 31 that scatters ultraviolet rays that have passed through the ultraviolet ray passing passage 12. The ultraviolet ray scattering section 31 scatters the ultraviolet rays that have passed through the ultraviolet ray passing passage 12 by diffuse reflection, and directs the ultraviolet rays to the uncured adhesive material 50 that has been applied to the underside of the module case 10. In other words, the ultraviolet ray scattering section 31 scatters the ultraviolet rays toward the adhesive material 50.

[0037] A plurality of ultraviolet scattering portions 31 are provided, similar to the ultraviolet passages 12. In this embodiment, each ultraviolet scattering portion 31 is formed as a recess recessed from the surface 30a of the heat sink 30 in the penetration direction of the ultraviolet passage 12 (the stacking direction of the heat sink 30 and the module case 10). One such ultraviolet scattering portion 31 is provided for each ultraviolet passage 12. Each ultraviolet scattering portion 31 is provided so as to be connected to the lower end of the ultraviolet passage 12. As shown in FIG. 4, the ultraviolet scattering portion 31 formed as a recess is formed so as to expose a portion of the lower surface of the module case 10 to which the adhesive 50 is applied.

[0038] 4, each power device 20 includes a mounting substrate 21 and a semiconductor element 22. The mounting substrate 21 is a substrate on which the semiconductor element 22 is mounted. The mounting substrate 21 includes a sheet-like insulating base material 23, a front conductor layer 24 provided on the front surface (one surface) of the insulating base material 23, and a back conductor layer 25 provided on the back surface of the insulating base material 23.

[0039] The insulating substrate 23 is made of an insulating material such as ceramics and is formed in a sheet shape. A front-side conductor layer 24 is formed on the surface of the insulating substrate 23 (the surface on the semiconductor element 22 side). This front-side conductor layer 24 is a metal layer that is electrically connected to the semiconductor element 22 and forms part of a conductive circuit. In other words, the front-side conductor layer 24 is a conductor layer on which the semiconductor element 22 is mounted.

[0040] A back-side conductor layer 25 is formed on the other surface of the insulating substrate 23 (the surface opposite to the semiconductor element 22). This back-side conductor layer 25 forms part of a heat transfer path that transfers heat conducted from the semiconductor element 22, etc. to the heat sink 30. The surface of this back-side conductor layer 25 opposite to the insulating substrate 23 is the mounting surface when the power device 20 is mounted on the heat sink 30. This mounting surface is joined to the heat sink 30 via solder 100. In this embodiment, the mounting substrate 21 includes the back-side conductor layer 25. However, the mounting substrate 21 does not necessarily need to include the back-side conductor layer 25. In this case, the insulating substrate 23 is joined to the heat sink 30.

[0041] For example, the semiconductor element 22 is mounted on the front conductor layer 24. There is no limit to the number of semiconductor elements 22 mounted on the front conductor layer 24. Such semiconductor elements 22 can be formed using a silicon (Si) semiconductor. Alternatively, the semiconductor elements 22 can be formed using a wide-gap semiconductor such as a silicon carbide (SiC) semiconductor or a gallium nitride (GaN) semiconductor.

[0042] Each power device 20 is placed on a heat sink 30 and accommodated in the opening 11 of the module case 10. The heat sink 30 supports the module case 10 and the power devices 20. The heat sink 30 also absorbs heat from the power devices 20 to cool them. The heat sink 30 is fixed to the central plate 2a so that the lower surface thereof is exposed to a flow path provided in the central plate 2a. The heat sink 30 may have a plurality of fins formed on the lower surface thereof.

[0043] The lead frame 40 is joined to the power device 20 and the bus bar 60. The lead frame 40 is joined to the power device 20 via solder 100. The lead frame 40 is also joined to the bus bar 60 via solder 100.

[0044] Next, a method for manufacturing the power module 3a will be described with reference to Figures 5 to 7. Figures 5 to 7 are schematic diagrams showing some of the manufacturing steps for the power module 3a of this embodiment.

[0045] 5, an ultraviolet-curable adhesive 50 is applied to the bottom surface of the module case 10. The adhesive 50 is applied to the bottom surface of the module case 10 in an uncured state.

[0046] Next, as shown in Fig. 6, the module case 10 with the adhesive material 50 applied thereto is placed on the heat sink 30. The process shown in Fig. 6 is a case member placement process. That is, in this case member placement process, the module case 10 having the ultraviolet light passing passage 12 that passes ultraviolet light from the outside of the module case 10 toward the ultraviolet light scattering portion 31 is placed on the heat sink 30 provided with the ultraviolet light scattering portion 31 that scatters ultraviolet light, via the ultraviolet light curing adhesive material 50 before curing.

[0047] In this embodiment, the adhesive material 50 is applied to the bottom surface of the module case 10, and then the module case 10 is placed on the heat sink 30. However, the adhesive material 50 may be applied to the heat sink 30, and then the module case 10 may be placed on the heat sink 30.

[0048] Next, as shown in FIG. 7, ultraviolet rays L are irradiated from above the module case 10 toward the ultraviolet passage 12. The ultraviolet rays L pass through the ultraviolet passage 12 and are irradiated onto the ultraviolet scattering section 31. The ultraviolet rays L irradiated onto the ultraviolet scattering section 31 are scattered. The ultraviolet rays L scattered by the ultraviolet scattering section 31 are irradiated onto the adhesive 50. Note that the ultraviolet rays L are incident not only on the portion of the adhesive 50 exposed by the ultraviolet scattering section 31, but also on the portion of the adhesive 50 sandwiched between the module case 10 and the heat sink 30. By irradiating the adhesive 50 with ultraviolet rays L in this manner, the adhesive 50 hardens.

[0049] 7 is an ultraviolet ray irradiation step. That is, in the ultraviolet ray irradiation step, ultraviolet ray L is irradiated onto the ultraviolet ray scattering portion 31 through the ultraviolet ray passing passage 12, so that the ultraviolet ray L is irradiated onto the adhesive material 50.

[0050] Thereafter, the power device 20 and the lead frame 40 are arranged and bonded by reflow. Furthermore, bonding wires and a sealing material 90 (not shown) are provided, thereby manufacturing the power module 3a.

[0051] The power module 3a manufactured in this manner is connected to the capacitor unit 4 and the like, and housed in the inverter case 2. At this time, the terminal 4a of the capacitor unit 4 and the connection terminal 61a of the bus bar 61 are fastened together by the screw 5. Here, the screw 5 is screwed into the ultraviolet light passage 12 so as to fasten the terminal 4a and the connection terminal 61a together, thereby fastening the terminal 4a and the connection terminal 61a together.

[0052] The power module 3a of this embodiment as described above includes a power device 20, a heat sink 30, and a module case 10. The power device 20 has a semiconductor element 22 mounted thereon. The heat sink 30 supports the power device 20. The module case 10 is bonded to the heat sink 30 via an ultraviolet-curing adhesive 50. The power module 3a of this embodiment also includes an ultraviolet scattering portion 31. The ultraviolet scattering portion 31 is provided on the heat sink 30 and scatters ultraviolet light L toward the adhesive 50. The module case 10 also has an ultraviolet light passage 12 that allows ultraviolet light L to pass from the outside of the module case 10 toward the ultraviolet light scattering portion 31.

[0053] According to the power module 3a of this embodiment, even after the module case 10 is bonded to the heat sink 30, the adhesive 50 can be irradiated with ultraviolet light L by irradiating the ultraviolet light scattering portion 31 with ultraviolet light L through the ultraviolet light passing path 12 provided in the module case 10. Therefore, according to the power module 3a of this embodiment, regardless of the material of the module case 10, the adhesive 50 can be irradiated with ultraviolet light L after the module case 10 is bonded to the heat sink 30.

[0054] In the power module 3a of this embodiment, the ultraviolet ray passing passage 12 is provided so as to penetrate the module case 10 in the stacking direction of the heat sink 30 and the module case 10. The ultraviolet ray scattering portion 31 is formed of a recess provided so as to be recessed in the penetration direction of the ultraviolet ray passing passage 12.

[0055] According to the power module 3a of this embodiment, the ultraviolet rays L are reflected by the inner wall surface of the recess, so that the ultraviolet rays L can more reliably reach the adhesive 50. Furthermore, according to the power module 3a of this embodiment, the ultraviolet rays L are prevented from being emitted to the outside of the ultraviolet scattering section 31 formed by the recess, so that the ultraviolet rays L can efficiently reach the adhesive 50.

[0056] The power module 3a of this embodiment also includes a bus bar 61. The bus bar 61 is held in the module case 10 and connected to the power device 20. A part of the ultraviolet light passage 12 is an attachment hole for a screw 5 for fastening the bus bar 61 to an external terminal.

[0057] According to the power module 3a of this embodiment, the mounting holes 12a of the screws 5 can be used as ultraviolet light passages 12. This makes it possible to reduce the number of ultraviolet light passages 12, and to increase the strength of the module case 10.

[0058] The manufacturing method of the power module 3a of this embodiment is a manufacturing method of a power module 3a including a module case 10 that is bonded via an adhesive 50 to a heat sink 30 that supports a power device 20 on which a semiconductor element 22 is mounted. The manufacturing method of the power module 3a of this embodiment also includes a module case arrangement step and an ultraviolet light irradiation step. The module case arrangement step is a step of arranging the module case 10, which has an ultraviolet light passing path 12 that passes ultraviolet light L from the outside of the module case 10 toward the ultraviolet light scattering part 31, on the heat sink 30 that is provided with an ultraviolet light scattering part 31 that scatters ultraviolet light L, via an ultraviolet light curing adhesive 50 before curing. The ultraviolet light irradiation step is a step of irradiating ultraviolet light L onto the ultraviolet light scattering part 31 through the ultraviolet light passing path 12, thereby irradiating the adhesive 50 with ultraviolet light L.

[0059] According to the manufacturing method of the power module 3a of this embodiment, even after the module case 10 is bonded to the heat sink 30, the ultraviolet rays L can be irradiated onto the adhesive 50 by irradiating the ultraviolet rays scattering portion 31 with the ultraviolet rays L through the ultraviolet rays passing path 12 provided in the module case 10. Therefore, according to the manufacturing method of the power module 3a of this embodiment, regardless of the material of the module case 10, the adhesive 50 can be irradiated with ultraviolet rays L after the module case 10 is bonded to the heat sink 30.

[0060] (Second embodiment) Next, a second embodiment of the present invention will be described with reference to Fig. 8. In the description of this embodiment, the description of the same parts as those in the first embodiment will be omitted or simplified.

[0061] 8 is a schematic cross-sectional view showing the general configuration of ultraviolet scattering portion 31A included in the power module of this embodiment. As shown in this figure, in this embodiment, bottom surface 31A1 of ultraviolet scattering portion 31A made of a recess is a rough surface that is rougher than the surface of heat sink 30 on which power device 20 is mounted.

[0062] According to the power module of this embodiment, compared to when bottom surface 31A1 of ultraviolet scattering portion 31A is a flat surface, it is possible to increase the degree of scattering of ultraviolet light L. Therefore, according to the power module of this embodiment, it is possible to irradiate adhesive material 50 with ultraviolet light L more uniformly.

[0063] (Third embodiment) Next, a third embodiment of the present invention will be described with reference to Fig. 9. In the description of this embodiment, the description of the same parts as those in the first embodiment will be omitted or simplified.

[0064] 9 is a schematic cross-sectional view showing the overall configuration of ultraviolet scattering portion 31B included in the power module of this embodiment. As shown in this figure, in this embodiment, bottom surface 31B1 of ultraviolet scattering portion 31B made of a recess is formed into an arc-shaped cross section with central portion 31B2 bulging out further toward module case 10 than edge portion 31B3. In other words, central portion 31B2 of bottom surface 31B1 of ultraviolet scattering portion 31B protrudes further toward module case 10 than edge portion 31B3.

[0065] According to the power module of this embodiment, it is possible to scatter the ultraviolet light L over a wider range. Therefore, according to the power module of this embodiment, it is possible to irradiate the adhesive material 50 with the ultraviolet light L more uniformly.

[0066] (Fourth embodiment) Next, a fourth embodiment of the present invention will be described with reference to Fig. 10. In the description of this embodiment, the description of the same parts as those in the first embodiment will be omitted or simplified.

[0067] 10 is a schematic cross-sectional view showing the general configuration of ultraviolet scattering portion 31C included in the power module of this embodiment. As shown in this figure, in this embodiment, bottom surface 31C1 of ultraviolet scattering portion 31C made of a recess is formed into a triangular cross section in which central portion 31C2 protrudes further toward module case 10 than edge portion 31C3. In other words, central portion 31C2 of bottom surface 31C1 of ultraviolet scattering portion 31C protrudes further toward module case 10 than edge portion 31C3.

[0068] According to the power module of this embodiment, it is possible to scatter the ultraviolet light L over a wider range. Therefore, according to the power module of this embodiment, it is possible to irradiate the adhesive material 50 with the ultraviolet light L more uniformly.

[0069] (Fifth embodiment) Next, a fifth embodiment of the present invention will be described with reference to Figures 11 and 12. In the description of this embodiment, the description of the same parts as those in the first embodiment will be omitted or simplified.

[0070] 11 is a horizontal cross-sectional view showing a schematic configuration of the bonding portion between the module case 10 and the heat sink 30 in the power module of this embodiment. FIG. 12 is a cross-sectional view taken along line BB of FIG.

[0071] As shown in these figures, in the power module of this embodiment, an ultraviolet ray passage 14 is provided inside the module case 10. More specifically, the module case 10 is provided with a groove portion 15 that is recessed upward from the lower surface of the module case 10. The lower end opening of this groove portion 15 is closed with a heat sink 30, thereby forming the ultraviolet ray passage 14.

[0072] Furthermore, the module case 10 is formed with a communication opening 16 that communicates with the ultraviolet light passage 14. The communication opening 16 is open in a direction perpendicular to the stacking direction of the heat sink 30 and the module case 10 (toward the side of the power module).

[0073] In this embodiment, a columnar ultraviolet scattering portion 32 is provided inside the ultraviolet passage 14. In this embodiment, the ultraviolet scattering portion 32 is formed so that its cross section is triangular. The ultraviolet scattering portion 32 is disposed opposite the communicating opening 16 so that one vertex of the triangle faces the communicating opening 16. As shown in FIG. 11 , a plurality of communicating openings 16 are provided. A ultraviolet scattering portion 32 is provided for each communicating opening 16. In other words, the same number of ultraviolet scattering portions 32 as the communicating openings 16 are provided.

[0074] Such an ultraviolet scattering portion 32 can be formed as a part of the heat sink 30. Alternatively, the ultraviolet scattering portion 32 can be provided separately from the heat sink 30. The cross-sectional shape of the ultraviolet scattering portion 32 is not limited to a triangular shape, and may be a quadrangular or polygonal shape with pentagons or more sides. The cross-sectional shape of the ultraviolet scattering portion 32 may also be a shape having a curved surface.

[0075] When manufacturing the power module of this embodiment, ultraviolet light L is irradiated from the side of the power module. The ultraviolet light L enters the ultraviolet light passage 14 from the communication opening 16 and is scattered by the ultraviolet light scattering section 32. The ultraviolet light L scattered by the ultraviolet light scattering section 32 is irradiated onto the adhesive 50.

[0076] In the power module of this embodiment as described above, the module case 10 has a communication opening 16 that communicates with the ultraviolet light passage 12. The communication opening 16 is open in a direction perpendicular to the stacking direction of the heat sink 30 and the module case 10. The ultraviolet light scattering portion 31 is located inside the ultraviolet light passage 14 and is formed in a columnar shape.

[0077] According to the power module of this embodiment, the ultraviolet rays L can be scattered inside the ultraviolet passage 14, and the ultraviolet rays L can be prevented from being emitted to the outside of the ultraviolet passage 14. Therefore, according to the power module of this embodiment, the ultraviolet rays L can be made to reach the adhesive material 50 efficiently.

[0078] Moreover, in the power module of this embodiment, the ultraviolet scattering portion 31 is disposed opposite the communication opening 16. According to such a power module of this embodiment, the ultraviolet rays L incident on the communication opening 16 can be reliably scattered by the ultraviolet scattering portion 31.

[0079] The power module of this embodiment also includes a plurality of ultraviolet scattering portions 31 and a plurality of communication openings 16. Such a power module of this embodiment can scatter ultraviolet light L over a wide range. Furthermore, compared to providing one large communication opening, the strength of the module case 10 can be improved by distributing a plurality of small communication openings 16, as in the power module of this embodiment.

[0080] While the preferred embodiments of the present invention have been described above with reference to the accompanying drawings, it goes without saying that the present invention is not limited to the above-described embodiments. The shapes and combinations of the components shown in the above-described embodiments are merely examples, and various modifications can be made based on design requirements, etc., without departing from the spirit of the present invention.

[0081] In the above embodiment, the semiconductor device of the present invention is applied to a power converter, i.e., the power converter includes the semiconductor device. However, the present invention is not limited to the power converter, and can be applied to a semiconductor device in which a case member and a base member are bonded via an adhesive layer.

[0082] The above embodiment can also be described as follows, for example:

[0083] (Appendix 1) a substrate on which a semiconductor element is mounted; a base member for supporting the substrate; a case member bonded to the base member via an ultraviolet-curing adhesive; Equipped with an ultraviolet ray scattering portion provided on the base member to scatter ultraviolet rays toward the adhesive material; The case member has an ultraviolet light passage that allows ultraviolet light to pass from the outside of the case member toward the ultraviolet light scattering portion. A semiconductor device characterized by:

[0084] (Appendix 2) the ultraviolet light passage is provided to penetrate the case member in a stacking direction of the base member and the case member, The ultraviolet scattering portion is a recess provided so as to be recessed in the direction in which the ultraviolet passage passes. 2. The semiconductor device according to claim 1,

[0085] (Appendix 3) 3. The semiconductor device according to claim 2, wherein the bottom surface of the recess is rougher than the surface of the base member on which the substrate is mounted.

[0086] (Appendix 4) 3. The semiconductor device according to claim 2, wherein the bottom surface of the recess is formed in a shape such that the center portion protrudes more toward the case member than the edge portion.

[0087] (Appendix 5) a conductive member held by the case member and connected to the circuit board; The ultraviolet light passage is a mounting hole for a fastening member for fastening the conductive member to an external terminal. 5. The semiconductor device according to any one of claims 2 to 4.

[0088] (Appendix 6) the case member has a communication opening that communicates with the ultraviolet light passage, the communication opening is open in a direction perpendicular to a stacking direction of the base member and the case member, The ultraviolet scattering portion is located inside the ultraviolet passage and is formed in a columnar shape. 2. The semiconductor device according to claim 1,

[0089] (Appendix 7) 7. The semiconductor device according to claim 6, wherein the ultraviolet scattering portion is disposed opposite the communication opening.

[0090] (Appendix 8) 8. The semiconductor device according to claim 7, comprising a plurality of the ultraviolet scattering portions and a plurality of the communication openings.

[0091] (Appendix 9) A semiconductor device according to any one of appendices 1 to 8, Power conversion is performed using the semiconductor device A power conversion device characterized by:

[0092] (Appendix 10) 1. A method for manufacturing a semiconductor device including a case member that is bonded via an adhesive to a base member that supports a substrate on which a semiconductor element is mounted, comprising: a case member disposing step of disposing a case member having an ultraviolet passageway for passing ultraviolet light from the outside of the case member toward the ultraviolet scattering portion on the base member provided with an ultraviolet scattering portion for scattering ultraviolet light, via the ultraviolet curing adhesive before curing; an ultraviolet irradiation step of irradiating the ultraviolet light onto the ultraviolet scattering portion through the ultraviolet light passage, thereby irradiating the ultraviolet light onto the adhesive; have 10. A method for manufacturing a semiconductor device comprising the steps of: [Explanation of symbols]

[0093] 1...power conversion device, 3a...power module (semiconductor device), 4a...terminal (external terminal), 5...screw (fastening member), 10...module case (case member), 12...ultraviolet light passage, 12a...mounting hole, 14...ultraviolet light passage, 15...groove portion, 16...communication opening, 20...power device (substrate), 30...heat sink (base member), 31...ultraviolet light scattering portion, 31A...ultraviolet light scattering portion, 31A1...bottom surface, 31B...ultraviolet light scattering portion, 31B1...bottom surface, 31B2...center portion, 31B3...edge portion, 31C...ultraviolet light scattering portion, 31C1...bottom surface, 31C2...center portion, 31C3...edge portion, 32...ultraviolet light scattering portion, 50...adhesive, 60...bus bar (conductive member), 61...bus bar, 61a...connecting terminal, 62...bus bar, 62a...connecting terminal

Claims

1. a substrate on which a semiconductor element is mounted; a base member for supporting the substrate; a case member bonded to the base member via an ultraviolet-curing adhesive; Equipped with an ultraviolet ray scattering portion provided on the base member to scatter ultraviolet rays toward the adhesive material; The case member has an ultraviolet light passage that allows ultraviolet light to pass from the outside of the case member toward the ultraviolet light scattering portion. A semiconductor device characterized by:

2. the ultraviolet light passage is provided to penetrate the case member in a stacking direction of the base member and the case member, The ultraviolet scattering portion is a recess provided so as to be recessed in the direction in which the ultraviolet passage passes.

2. The semiconductor device according to claim 1.

3. 3. The semiconductor device according to claim 2, wherein the bottom surface of the recess is rougher than the surface of the base member on which the substrate is mounted.

4. 3. The semiconductor device according to claim 2, wherein the bottom surface of the recess is formed in a shape such that the center portion thereof protrudes more toward the case member than the edge portion thereof.

5. a conductive member held by the case member and connected to the substrate; The ultraviolet light passage is a mounting hole for a fastening member for fastening the conductive member to an external terminal.

5. The semiconductor device according to claim 2, wherein the semiconductor device is a semiconductor device having a first insulating layer and a second insulating layer.

6. the case member has a communication opening that communicates with the ultraviolet light passage, the communication opening is open in a direction perpendicular to a stacking direction of the base member and the case member, The ultraviolet scattering portion is located inside the ultraviolet passage and is formed in a columnar shape.

2. The semiconductor device according to claim 1.

7. 7. The semiconductor device according to claim 6, wherein the ultraviolet scattering portion is disposed opposite the communication opening.

8. 8. The semiconductor device according to claim 7, further comprising a plurality of said ultraviolet scattering portions and a plurality of said communication openings.

9. A semiconductor device according to any one of claims 1 to 4, Power conversion is performed using the semiconductor device A power conversion device characterized by:

10. 1. A method for manufacturing a semiconductor device including a case member that is bonded via an adhesive to a base member that supports a substrate on which a semiconductor element is mounted, comprising: a case member disposing step of disposing a case member having an ultraviolet passageway for passing ultraviolet light from the outside of the case member toward the ultraviolet scattering portion on the base member provided with an ultraviolet scattering portion for scattering ultraviolet light, via the ultraviolet curing adhesive before curing; an ultraviolet irradiation step of irradiating the ultraviolet light onto the ultraviolet scattering portion through the ultraviolet light passage, thereby irradiating the ultraviolet light onto the adhesive; have 10. A method for manufacturing a semiconductor device comprising the steps of:

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