Power module

Abstract

To provide a power module capable of effectively solving the problem of a large positioning error of a current detection device.SOLUTION: A power module 100 includes a first metal layer 12 and an insulating layer 14. The first metal layer includes: a leadless frame substrate 10 forming a circuit trace disposed on an insulating layer and having an extension structure 122 extending from the insulating layer as an output end part; at least one semiconductor element 20 disposed on the first metal layer; a current detector 30 disposed on the output end part; and a mold compound 40 that completely covers the first metal layer and the at least one semiconductor element located on the insulating layer of the leadless frame substrate, and partially covers the output end part such that the current detector is completely exposed to the outside of the mold compound.SELECTED DRAWING: Figure 2A

Description

[Technical Field]

[0001] The present disclosure relates to a power module, and more particularly to a power module having a current detector. [Background technology]

[0002] In the application of conventional circuit systems, it is necessary to monitor the output / input current of a power module during operation. One method is to attach a current detector externally to the output terminal of the power module, for example, by fixing the current detector to the lead frame or bus bar at the output end of the power module using a plastic frame or circuit board.

[0003] After installing a current detector, users must calibrate the detector's signal, which can be time-consuming. For example, downstream power equipment assemblers install current detectors on power modules by manually screwing or assembling them, resulting in significant positioning errors and significant signal variations between the current detectors on each power module. This requires time-consuming signal calibration. The typical method for installing a current detector involves placing the current detector on a circuit board, sealing off the output pins on the circuit board and the power module, and using a U-shaped ring to strengthen the magnetic field and improve signal strength. However, the problem of signal variations due to inaccurate positioning remains unresolved. Furthermore, the assembly of the U-shaped ring is complex and takes up a lot of space. Summary of the Invention [Problem to be solved by the invention]

[0004] In order to solve the problems of the known art above, the present disclosure provides a power module that can effectively solve the problem of large positioning errors of current detection devices in the prior art. [Means for solving the problem]

[0005] One embodiment of the present disclosure provides a power module including a leadless frame substrate, at least one semiconductor device, a current detector, and a molding compound. The leadless frame substrate includes a first metal layer and an insulating layer, the first metal layer forming circuit traces disposed on the insulating layer and having an extension structure extending from the insulating layer as an output end. The at least one semiconductor device is disposed on the first metal layer. The current detector is disposed on the output end. The portion of the first metal layer located on the insulating layer is completely covered with the molding compound, the at least one semiconductor device is completely covered with the molding compound, and the molding compound partially covers the output end such that the current detector is completely exposed outside the molding compound. The power module converts DC power to AC power, outputs the AC power through the output end, and detects the AC power using the current detector.

[0006] In the power module according to the embodiment of the present disclosure, the magnetic susceptibility of the first metal layer is less than 1 and greater than 0.

[0007] In a power module according to an embodiment of the present disclosure, the leadless frame substrate further includes a second metal layer disposed under the insulating layer and partially covered by the molding compound.

[0008] In the power module according to one embodiment of the present disclosure, the current detector is fixed to the output end so as to be assisted by a robot arm.

[0009] The present disclosure further provides a power module including a leadless frame substrate, at least one semiconductor device, a current detector, and a molding compound. The leadless frame substrate includes a first metal layer and an insulating layer, the first metal layer being disposed on the insulating layer and forming a circuit trace having an output end. The at least one semiconductor device is disposed on the circuit trace. The current detector is disposed on the output end. The molding compound completely covers the first metal layer of the leadless frame substrate, the at least one semiconductor device, and the current detector. The power module converts DC power to AC power, outputs the AC power through the output end, and detects the AC power using the current detector.

[0010] In the power module according to the embodiment of the present disclosure, the magnetic susceptibility of the first metal layer is less than 1 and greater than 0.

[0011] In a power module according to an embodiment of the present disclosure, the leadless frame substrate further includes a second metal layer disposed under the insulating layer and partially covered by the molding compound.

[0012] In the power module according to one embodiment of the present disclosure, the current detector is fixed to the output end so as to be assisted by a robot arm.

[0013] The power module according to an embodiment of the present disclosure further includes a lead frame connected to the output end.

[0014] In a power module according to an embodiment of the present disclosure, the power module further includes a pin structure disposed on the first metal layer, the current detector being a surface-mounted component, and a signal end of the component being electrically connected to the pin structure via the circuit trace.

[0015] In the power module according to the embodiment of the present disclosure, a signal end of the current detector is electrically connected to the first metal layer via a bonding wire.

[0016] The power module according to an embodiment of the present disclosure further includes a multi-layer substrate circuit structure disposed on the first metal layer.

[0017] In a power module according to an embodiment of the present disclosure, the multilayer substrate circuit structure extends outside the molding compound, and the signal end of the current detector is electrically connected to the multilayer substrate circuit structure via a bonding wire.

[0018] In a power module according to one embodiment of the present disclosure, the power module further includes a pin structure disposed on the multilayer substrate circuit structure, and the signal end of the current detector is electrically connected to the multilayer substrate circuit structure via a bonding wire, and is also electrically connected to the pin structure via the multilayer substrate circuit structure. [Effects of the Invention]

[0019] Compared with the prior art, the structure of the power module disclosed herein is suitable for precision packaging technologies such as surface mount technology (SMT), allowing the current detector to be accurately mounted at the output end, providing a power module equipped with a current detector. Because the current detector disclosed herein has a small positioning error, the initial calibration data of the sensing signal can be directly applied, eliminating the need to recalibrate the current detector signal of each power module, effectively avoiding the problems of the prior art. [Brief explanation of the drawings]

[0020] [Figure 1] 1 shows a structural schematic diagram of a known power module. [Figure 2A] 1 shows a structural schematic diagram of a power module according to a first embodiment of the present disclosure. [Figure 2B]2B shows a cross-sectional view of the power module of FIG. 2A along section line BB' according to the present disclosure. [Figure 3] 10 shows a structural schematic diagram of a power module according to a second embodiment of the present disclosure. [Figure 4] 4 shows a cross-sectional view of the power module of FIG. 3 taken along section line CC' according to the present disclosure. [Figure 5] FIG. 10 is a structural schematic diagram of a power module according to a third embodiment of the present disclosure. [Figure 6] 6 shows a cross-sectional view of the power module of FIG. 5 taken along section line DD' according to the present disclosure. [Figure 7] 6 shows a cross-sectional view of the power module of FIG. 5 taken along section line EE' according to the present disclosure. [Figure 8] FIG. 10 is a partial cross-sectional structural schematic diagram of a power module according to a fourth embodiment of the present disclosure. [Figure 9] FIG. 10 is a structural schematic diagram of a power module according to a fifth embodiment of the present disclosure. [Figure 10] 10 shows a cross-sectional view of the power module of FIG. 9 taken along the FF' cross-sectional line according to the present disclosure. [Figure 11] 10 shows a cross-sectional view of the power module of FIG. 9 taken along section line GG' according to the present disclosure. [Figure 12] 10 is a partial cross-sectional structural schematic diagram of a power module according to a sixth embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0021] In order to make the features and advantages of the present disclosure more clearly understandable, preferred embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. The directional terms used in the present disclosure are for the purpose of explaining and understanding the present disclosure, and are not intended to limit the present disclosure. In the drawings, units having similar structures are designated by the same reference numerals.

[0022] 2A and 2B, a first embodiment of the present disclosure provides a power module 100 including a leadless frame substrate 10, at least one semiconductor element 20, a current detector 30, and a molding compound 40. The leadless frame substrate 10 includes a first metal layer 12 and an insulating layer 14. That is, the leadless frame substrate 10 is a multi-material layer substrate composed of multiple material layers, in which the first metal layer 12 forms circuit traces (121, 122, 16) disposed on the insulating layer 14 and has an extension structure 122 extending from the insulating layer 14 as an output end 16. The at least one semiconductor element 20 is disposed on the first metal layer 12. The current detector 30 is disposed on the output end 16. The molding compound 40 completely covers the first metal layer 12 and at least one semiconductor element 20 of the leadless frame substrate 10 located on the insulating layer 14, and partially covers the output end 16 so that the current detector 30 is completely exposed outside the molding compound 40, wherein the power module 100 converts DC power to AC power, outputs the AC power through the output end 16, and detects the AC power using the current detector 30.

[0023] Referring to FIG. 1, a conventional power module p100 uses a lead-frame substrate, which differs from the multiple material layers of the leadless frame substrate 10 of the present disclosure (shown in FIG. 2B). Also, in the known technology of FIG. 1, the circuit trace p12 covered with a mold compound p40 and the extension structure p122 extending from the mold compound p40 are entirely formed by the lead frame p10, and the extension structure p122 is used as the input terminal p121 or output terminal p16 of the power module. A current sensor p30 is disposed on the output terminal p16. A semiconductor device p20 is disposed on a heat dissipation block p18. However, the lead frame p10 is manufactured by metal stamping and cannot provide the precise positioning required for the current sensor of the present disclosure. The present invention uses a lead-off substrate 10, the main feature of which is that the metal surface of the multi-material layer substrate extends from the insulating layer to form a connection assembly that serves as the input or output terminal of the power module.

[0024] Referring to FIGS. 2A and 2B , in one embodiment, the leadless frame substrate 10 is a ceramic substrate, and its first metal layer 12 is made of, for example, copper or aluminum, with circuit traces formed by casting and etching, achieving high positioning accuracy and shape precision. Its thickness is typically 0.5 to 0.8 mm, and can be as thick as 1.2 mm. Compared to the circuit layers of a typical circuit board, the first metal layer 12 is relatively thick and extends from the underlying insulating layer 14 without support from the insulating layer 14, serving as output or input pins or plugs. A thicker first metal layer 12 can accommodate higher operating voltages and currents of semiconductor devices. The insulating layer 14 is made of, for example, a ceramic material, providing both insulation and heat resistance. The leadless frame substrate 10 is suitable for use in environments with high heat and vibration in the power field. Using the leadless frame substrate 10 enables power modules to be miniaturized and their power density to be increased.

[0025] 2A and 2B , in one embodiment, the first metal layer 12 forms circuit traces (121, 122, 16) disposed on the insulating layer 14. For example, the first metal layer 12 includes two input terminals 121 for introducing DC potentials to provide input potentials required by the semiconductor device 20, and extension structures 122 extending from the insulating layer 14, which are three output terminals 16 for extracting three-phase AC power from the semiconductor device 20. Specific circuit traces can be designed according to actual needs. The semiconductor device 20 outputting three-phase AC power is merely an example. The three output terminals 16 shown in FIG. 2A are also merely an example, and the type of AC power and the number of output terminals 16 can be designed as needed. The AC power may be single-phase two-wire, single-phase three-wire, or two-phase, three-phase, four-phase, six-phase, etc., and the present invention is not limited thereto.

[0026] 2A and 2B , the semiconductor element 20 is, for example, a DC-AC device. It can be disposed on two input terminals 121 formed by the first metal layer 12 using surface mount technology (SMT), or the semiconductor element 20 is electrically connected to the two input terminals 121 by bonding wires (also referred to as wire bonds). The output terminals of the semiconductor element 20 are electrically connected to the corresponding output terminals 16 by bonding wires or surface mounting, although the present disclosure is not limited thereto ( FIG. 2A shows the semiconductor element 20 disposed on the two input terminals 121 using surface mount technology and the output terminals of the semiconductor element 20 are electrically connected to the corresponding output terminals 16 by bonding wires). One or more semiconductor elements 20 may be provided as needed. Other electronic components may be provided within the power module 100 as needed, but the present disclosure is not limited thereto.

[0027] Referring to FIGS. 2A and 2B, the current detector 30 is, for example, a Hall current detector or a magneto-impedance (IM) current detector. A current detector packaged using surface mount technology is preferred, and is suitable for the current detector 30 to be mounted on the output terminal 16 by a robot arm using surface mount technology or semiconductor chip die bonding technology. This significantly improves the positioning accuracy of the current detector 30. Current detectors are generally divided into contact types (e.g., Hall detectors) and non-contact types (e.g., magneto-impedance detectors). Contact current detectors have a detection current input terminal and a detection current output terminal for passing the current to be detected through the current detector. Non-contact current detectors do not require the installation of a detection current input terminal and a detection current output terminal. A Hall current detector typically has four signal terminals: a positive potential terminal and a negative potential terminal (ground) for providing the detector's operating potential, a signal output terminal for outputting the detection signal, and a reference potential terminal. A magneto-impedance detector typically only requires a signal output terminal and a reference potential terminal. However, the present disclosure is not limited thereto, and the number of terminals of the current detector can be set according to actual needs.

[0028] 2A and 2B , in one embodiment, molding compound 40 includes a polymer or resin, such as epoxy, acrylonitrile butadiene styrene (ABS), polycarbonate (PC), polyurethane (PU), or the like, but the present disclosure is not limited thereto. Molding compound 40 completely covers the semiconductor element 20 and the portion of first metal layer 12 located on insulating layer 14 to protect first metal layer 12 and semiconductor element 20. Furthermore, molding compound 40 partially covers output end 16 so that current detector 30 is completely exposed outside the molding compound.

[0029] 2B , in one embodiment, in order to accurately position the current detector 30, the current detector is not fixed to a circuit board in the conventional manner and then sealed with the power module 100, but is fixed to the output end 16 using surface mounting or die bonding technology. Furthermore, a circuit board 80 provided with an elastic piece or clip structure 84 is crimped to the signal end of the current detector 30 to electrically connect it, and the circuit board 80 is fixed using a screw hole 82. This prevents inaccurate positioning of the current detector 30, which occurs when the circuit board 80 is manually screwed in and fixed in the conventional manner.

[0030] In the power module 100 according to an embodiment of the present disclosure, the magnetic susceptibility of the first metal layer 12 is less than 1 and greater than 0. Specifically, to prevent the magnetization of the first metal layer 12 from having an unnecessary effect on the signal of the current detector 30 or to prevent magnetic hysteresis from occurring, which would cause a deviation in the signal of the current detector 30, it is preferable to select a non-ferrous metal or a conductive material with a magnetic susceptibility less than 1 and greater than 0, such as copper or aluminum, for the first metal layer 12.

[0031] 2B , in a power module 100 according to an embodiment of the present disclosure, the leadless frame substrate 10 further includes a second metal layer 18 disposed under the insulating layer 14 and partially covered by the molding compound 40. Specifically, the second metal layer can be used to contact a heat sink, a heat pipe, a fan, etc. to dissipate heat from the power module 100.

[0032] In the power module according to an embodiment of the present disclosure, the current detector 30 is fixed onto the output end 16 with the assistance of a robot arm. Specifically, the current detector 30 is fixed onto the output end 16 by the robot arm using a combination of surface mounting and die bonding techniques.

[0033] The principle of die bonding is to fix a die or component onto a specified material using various processes such as adhesive, heat, pressure, or ultrasound. Die bonding techniques include several types, such as adhesive die bonding or eutectic process, which can be further divided into thermo-compression die bonding or thermo-sonic die bonding.

[0034] In adhesive die bonding, an adhesive is used to fix a die (a current detector in this disclosure) onto a substrate or material, and the adhesive's properties include conductive or non-conductive. Before the operation, the adhesive is removed from a low-temperature freezer and returned to room temperature to become liquid. Then, an automatic dispensing device is used to dispense the adhesive onto the substrate or material, and the die is placed on it. After the die is placed, the adhesive is placed in an oven to dry and solidify, thereby completing the die bonding operation.

[0035] The eutectic process combines two identical or dissimilar metals to achieve electrical conductivity. In this disclosure, the solder pads on the package of the current detector 30 are metallurgically bonded to a first metal layer. The thermocompression die bonding process applies heat energy to a solder layer to melt the solder into a liquid state, and another welding point is heated to a temperature just below the melting point of the solder. The liquefied solder penetrates the metal on the other joining surface to form an intermetallic bond. This process is also known as wetting. To prevent displacement of the objects due to the liquid solder, pressure can be applied from above while the two joining points are joined, and flux can be used to promote optimal metallurgical bonding. Currently, the most commonly used solder in the thermocompression die bonding process in the industry is gold-tin.

[0036] Ultrasonic thermocompression die bonding uses mechanical ultrasonic vibrations to provide energy to bond two types of metal, the most commonly used metal being gold-to-gold bonding. Generally, thermocompression die bonding requires temperatures of over 270°C, which can easily damage the substrate or some sensitive chips. Ultrasonic thermocompression significantly reduces the die bonding temperature to less than 150°C, and eliminates the need for flux or post-solder cleaning.

[0037] 3 and 4, a second embodiment of the present disclosure provides a power module 200, which includes a leadless frame substrate 10 including a first metal layer 12 and an insulating layer 14, the first metal layer 12 being disposed on the insulating layer 14 and forming circuit traces (121, 15, 16) having an output end 16, at least one semiconductor element 20 being disposed on the circuit trace 121, a current detector 30 being disposed at the output end 16, and a molding compound 40 completely covering the first metal layer 12 of the leadless frame substrate 10, the at least one semiconductor element 20, and the current detector 30, wherein the power module 200 converts DC power into AC power, outputs the AC power via the output end 16, and detects the AC power by the current detector 30.

[0038] 3 and 4, power module 200 is similar to power module 100, except that molding compound 40 of power module 200 completely covers current detector 30. For other components that are similar to those of power module 100, please refer to the corresponding paragraphs above and the descriptions of FIGS. 2A and 2B, and the descriptions thereof will not be repeated here. By completely covering current detector 30 with molding compound 40, protection can be provided for the structure and positioning of current detector 30.

[0039] 3 and 4, in a power module 200 according to a second embodiment of the present disclosure, the magnetic susceptibility of the first metal layer 12 is less than 1 and greater than 0. In the power module 200 according to the embodiment of the present disclosure, the leadless frame substrate 10 further includes a second metal layer 18 disposed under the insulating layer 14 and partially covered with a molding compound 40. In the power module 200 according to the embodiment of the present disclosure, the current detector 30 is fixed on the output end 16 so as to be assisted by a robot arm.

[0040] 3 and 4 , a power module 200 according to a second embodiment of the present disclosure further includes a lead frame 50 coupled to the output end 16. Specifically, in this embodiment, the output end 16 does not extend from the molding compound 40; instead, the lead frame 50 is soldered to the output end 16 to provide power output. This not only maintains the positioning accuracy of the current detector 30, but also maintains the structural strength of the lead frame 50. The lead frame 50 may be electrically connected to and fixed to the output end 16 by welding or sintering.

[0041] 3 and 4, in one embodiment, the power module 200 further includes a signal pin 15 formed by the first metal layer 12 and for electrically connecting to the signal end of the current detector 30. Although FIGS. 3 and 4 show that the signal end of the current detector 30 and the signal pin 15 are connected by a bonding wire 32, the present disclosure is not limited thereto, and the signal end of the current detector 30 and the signal pin 15 may also be connected by a surface mounting method.

[0042] 3 and 4, in one embodiment, the power module 200 further includes a ceramic substrate, such as a multilayer circuit structure 60, disposed on the first metal layer 12. The multilayer circuit structure 60 may be, for example, a direct bonded copper (DBC) substrate (also known as a copper-clad laminate ceramic substrate) or an active metal brazing (AMB) substrate, both of which are ceramic substrates. The multilayer circuit structure combines the heat dissipation properties of ceramics with the conductive properties of metals. After oxidizing the copper foil, a thick copper foil is directly coated on the ceramic substrate by high-temperature sintering, and a circuit pattern is etched onto the copper foil by exposure and development. The multilayer circuit structure 60 may be formed by alternately stacking multiple metal layers 62 and ceramic layers 64. For example, while FIG. 4 illustrates only one metal layer 62 and one ceramic layer 64, this is not limiting. Perforations may also be formed in the ceramic layer 64 to electrically connect the upper and lower metal layers 62. The method of connecting the signal end of the current detector 30 of the power module 200 to the signal pin 15 is to use a bonding wire 32 to connect the signal end of the current detector 30 to a metal layer 62 on the multilayer substrate circuit structure 60, and then connect it to the signal pin 15 via the multilayer substrate circuit structure 60 (for example, internal wiring within a hole in the ceramic layer 64, not shown).

[0043] 5, 6 and 7, a power module 200' according to a third embodiment of the present disclosure does not include a lead frame 50, but extends directly from the molding compound 40 via an output end 16. For example, the first metal layer 12 has an extension structure 122 extending from the insulating layer 14 as the output terminal 16, which is different from the power module 200. In various applications, the output end 16 formed by the thickened first metal layer 12 has sufficient strength to form a pin or plug for power output. For other components similar to those of the power modules 100 and 200, please refer to the corresponding paragraphs above and the descriptions of FIGS. 2A to 4, and the descriptions thereof will not be repeated here.

[0044] Referring to FIG. 8, a power module 220 according to a fourth embodiment of the present disclosure differs from the power module 200′ in that the position of the signal pin 15 of the power module 200′ is replaced by a multi-layer substrate circuit structure 60. The current detector 30 is electrically connected to a metal layer 62 of the multi-layer substrate circuit structure 60 via a bonding wire 32. In addition to the strong structural strength of the ceramic layer 64, the multi-layer substrate circuit structure 60 can be suitable for more complex circuit designs. For other components similar to those of the power modules 100, 200, and 200′, please refer to the corresponding paragraphs above and the descriptions of FIGS. 2A to 7, and the descriptions thereof will not be repeated here.

[0045] 8 , the power module 220 according to the fourth embodiment of the present disclosure further includes a multi-layer substrate circuit structure 60 disposed on the circuit trace 124 of the first metal layer 12. In the power module 220 according to the fourth embodiment of the present disclosure, the multi-layer substrate circuit structure 60 extends outside the molding compound 40, and the signal end of the current detector 30 is electrically connected to the multi-layer substrate circuit structure 60 via a bonding wire 32.

[0046] 9, 10 and 11, a power module 200'' according to a fifth embodiment of the present disclosure differs from the power module 200' in that the signal pin 15 of the power module 200' is replaced with a pin structure 70 disposed on the first metal layer 12, wherein the current detector 30 is a surface-mounted component, and the signal end of the current detector 30 is electrically connected to the pin structure 70 via a circuit trace 123. For other components similar to those of the power modules 100, 200, 200' and 220, please refer to the corresponding paragraphs above and the descriptions of FIGS. 2A to 8, and the descriptions thereof will not be repeated here.

[0047] 9, 10 and 11, the signal end of the current detector 30 is connected to the circuit trace 123 of the first metal layer 12 via a bonding wire 32, and then electrically connected to a pin structure 70 provided on the circuit trace 123.

[0048] 12, a power module 240 according to a sixth embodiment of the present disclosure differs from the power module 200'' in that a pin structure 70 is disposed on the multilayer substrate circuit structure 60, and a signal end of the current detector 30 is electrically connected to a metal layer 62 of the multilayer substrate circuit structure 60 via a bonding wire 32, and is also electrically connected to the pin structure 70 via the multilayer substrate circuit structure 60. For other components similar to those of the power modules 100, 200, 200', 220, and 200'', please refer to the corresponding paragraphs above and the descriptions of FIGS. 2A to 11, and the descriptions thereof will not be repeated here.

[0049] Compared with the prior art, the power module structure of the present disclosure is applicable to precision packaging technologies such as surface mounting technology, allowing the current detector to be accurately mounted at the output end, providing a power module equipped with a current detector. Because the current detector of the present disclosure has a small positioning error, the initial calibration data of the sensing signal can be directly applied without recalibrating the current detector signal of each power module, effectively avoiding the problems of the prior art.

[0050] The above are only preferred embodiments of the present disclosure, and those skilled in the art may make some improvements and modifications without departing from the principles of the present disclosure, and all of these improvements and modifications should be considered within the protection scope of the present disclosure. [Explanation of symbols]

[0051] 100, 200, 200', 200'', 220, 240 Power Module 10 Leadless frame board 12 1st metal layer 121 Input end 122 Extension structure 123, 124 Circuit traces 14 Insulating layer 15 signal pins 16 Output end 18 Second metal layer 20 Semiconductor elements 30 Current detector 32 Bonding wire 40 Mold Compound 60 Multilayer board circuit structure 62 Metal layer 64 ceramic layers 70-pin structure 80 Circuit Board 82 screw hole BB', CC', DD', EE', FF', GG' cross section lines p10 lead frame p100 power module p12 Circuit trace p121 input terminal p122 Extension structure p16 output terminal p18 Heat dissipation block p20 Semiconductor element p30 current detector p40 mold compound

Claims

1. A power module, a leadless frame substrate including a first metal layer and an insulating layer, the first metal layer forming circuit traces disposed on the insulating layer and having an extension structure extending from the insulating layer as an output end; at least one semiconductor device disposed on the first metal layer; a current detector disposed on the output end; a molding compound, wherein a portion of the first metal layer located on the insulating layer is completely covered with the molding compound, the at least one semiconductor element is completely covered with the molding compound, and the molding compound partially covers the output end such that the current detector is completely exposed outside the molding compound; The power module is used to convert DC power into AC power, output the AC power through the output terminal, and detect the AC power using the current detector. Power module.

2. the magnetic susceptibility of the first metal layer is less than 1 and greater than 0; The power module according to claim 1 .

3. the leadless frame substrate further includes a second metal layer disposed below the insulating layer and partially covered by the molding compound; The power module according to claim 1 .

4. A power module, a leadless frame substrate including a first metal layer and an insulating layer, the first metal layer being disposed on the insulating layer and forming circuit traces having output ends; at least one semiconductor device disposed on the circuit trace; a current detector disposed on the output end; a molding compound completely covering the first metal layer of the leadless frame substrate, the at least one semiconductor device, and the current detector; The power module is used to convert DC power into AC power, output the AC power through the output terminal, and detect the AC power using the current detector. Power module.

5. the magnetic susceptibility of the first metal layer is less than 1 and greater than 0; The power module according to claim 4.

6. the leadless frame substrate further includes a second metal layer disposed below the insulating layer and partially covered by the molding compound; The power module according to claim 4.

7. further comprising a lead frame connected to the output end. The power module according to claim 4.

8. and a pin structure disposed on the first metal layer, the current detector being a surface-mount component, and a signal end of the component being electrically connected to the pin structure via the circuit trace. The power module according to claim 4.

9. a signal end of the current detector electrically connected to the first metal layer via a bonding wire; The power module according to claim 4.

10. further comprising a multi-layer substrate circuit structure disposed on the first metal layer; The power module according to claim 4.

11. the multilayer substrate circuit structure extends outside the molding compound, and the signal end of the current detector is electrically connected to the multilayer substrate circuit structure via a bonding wire; The power module according to claim 10.

12. The current detector further includes a pin structure disposed on the multilayer substrate circuit structure, wherein a signal end of the current detector is electrically connected to the multilayer substrate circuit structure via a bonding wire, and is electrically connected to the pin structure via the multilayer substrate circuit structure. The power module according to claim 10.

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