PLASMA PROCESSING APPARATUS, SiC COMPONENT, AND SUBSTRATE PROCESSING APPARATUS

Abstract

To provide a technique enabling a component for semiconductor manufacturing apparatus to deform.SOLUTION: There is provided a semiconductor manufacturing apparatus that comprises: a processing chamber; a substrate support part provided in the processing chamber to hold a substrate; a plate opposed to the substrate support part and having a gas introduction port; and a cylinder member supporting the plate and surrounding the circumference of the substrate, wherein the plate and the cylinder member are components of an SiC member having an SiC film deposited by CVD, and the cylinder member has a first part capable of deforming when loaded.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor manufacturing equipment and components for semiconductor manufacturing equipment. [Background technology]

[0002] For example, Patent Document 1 proposes a method for manufacturing a silicon single crystal wafer processing pedestal made solely of semiconductor material, in which a film of semiconductor material is deposited on a graphite substrate by vapor deposition, a slit is formed by mechanical processing while leaving the substrate, and then the graphite substrate is burned out.

[0003] For example, Patent Document 2 proposes an SiC member in which a SiC film is formed on the outer periphery of a substrate by vapor deposition, and the substrate is removed to obtain a three-dimensional shape made of the SiC film. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 57-7923 [Patent Document 2] Patent No. 6550198 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides techniques that enable modification of components for semiconductor manufacturing equipment. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, there is provided a semiconductor manufacturing apparatus comprising: a processing chamber; a substrate support disposed within the processing chamber and configured to hold a substrate; a plate facing the substrate support and having a gas inlet; and a cylindrical member supporting the plate and surrounding the substrate, wherein the plate and the cylindrical member are components of a SiC member having a SiC film formed by CVD, and the cylindrical member has a first portion that is deformable under load. [Effects of the Invention]

[0007] According to one aspect, it is possible to enable deformation of parts for semiconductor manufacturing equipment. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a schematic cross-sectional view illustrating an example of a plasma processing system according to an embodiment. [Figure 2] FIG. 2 is a diagram showing an example of a SiC member according to an embodiment. [Figure 3] FIG. 3 is a diagram showing an example of a cross section of the AA plane in FIG. 2(d). [Figure 4] FIG. 2 is a diagram showing an example of a SiC member according to an embodiment. [Figure 5] FIG. 2 is a diagram showing an example of a SiC member according to an embodiment. [Figure 6] 1A to 1C are diagrams showing an example of a method for manufacturing a SiC member according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0010] [Plasma processing system] An example of the configuration of a plasma processing system according to an embodiment will be described below with reference to Fig. 1. Fig. 1 is a schematic cross-sectional view showing an example of a plasma processing system according to an embodiment.

[0011] The plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a controller 2. The capacitively coupled plasma processing apparatus 1 is an example of a semiconductor manufacturing apparatus and includes a plasma processing chamber (processing chamber) 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet unit. The gas inlet unit is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet unit includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above and facing the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas inlet for supplying at least one processing gas to the plasma processing space 10s and at least one gas outlet for exhausting gas from the plasma processing space. The sidewall 10a is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0012] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W and an annular region (ring support surface) 111b for supporting the ring assembly 112. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. In one embodiment, the main body 111 includes a base and an electrostatic chuck. The base includes a conductive member. The conductive member of the base functions as a lower electrode. The electrostatic chuck is disposed on the base. The upper surface of the electrostatic chuck has the substrate support surface 111a. The ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring. Although not shown, the substrate support 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path. The substrate support 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas between the back surface of the substrate W and the substrate support surface 111a.

[0013] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes a conductive member. The conductive member of the showerhead 13 functions as an upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0014] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0015] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the conductive members of the substrate support 11 and / or the conductive members of the showerhead 13. This causes plasma to be formed from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate plasma from one or more process gases in the plasma processing chamber 10. Furthermore, supplying a bias RF signal to the conductive members of the substrate support 11 generates a bias potential on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0016] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to the conductive members of the substrate support 11 and / or the conductive members of the showerhead 13 via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 13 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to the conductive members of the substrate support 11 and / or the conductive members of the showerhead 13. The second RF generating unit 31b is coupled to the conductive members of the substrate support 11 via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated bias RF signals are supplied to the conductive members of the substrate support 11. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0017] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to a conductive member of the substrate support 11 and configured to generate a first DC signal. The generated first bias DC signal is applied to the conductive member of the substrate support 11. In one embodiment, the first DC signal may be applied to another electrode, such as an electrode in an electrostatic chuck. In one embodiment, the second DC generator 32b is connected to a conductive member of the showerhead 13 and configured to generate a second DC signal. The generated second DC signal is applied to the conductive member of the showerhead 13. In various embodiments, at least one of the first and second DC signals may be pulsed. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0018] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0019] The controller 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The controller 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1. The controller 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control operations based on programs stored in the storage unit 2a2. The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0020] [Parts for semiconductor manufacturing equipment] Next, components for a semiconductor manufacturing apparatus according to the present disclosure will be described. Fig. 2 shows cylindrical member 12, plate 14 of shower head 13, and ring assembly 112 as examples of components for a semiconductor manufacturing apparatus according to the present disclosure. However, components for a semiconductor manufacturing apparatus according to the present disclosure are not limited to these.

[0021] The cylindrical member 12 is a tube-shaped (cylindrical) part arranged to cover the side wall 10a (inner wall) of the plasma processing chamber 10. The cylindrical member 12 prevents reaction products generated during plasma processing from adhering to the inner wall of the plasma processing chamber 10. The cylindrical member 12 may also be provided in a position to cover the outer peripheral side wall of the substrate support part 11. The cylindrical member 12 supports the plate 14 and surrounds the periphery of the substrate W, thereby confining plasma around the substrate W.

[0022] The plate 14 is a disk-shaped component that constitutes a portion including the lower surface of the shower head 13. The plate 14 is supported by a cylindrical member 12 that serves as a support. A plurality of gas inlets 13c penetrate the plate 14 in the thickness direction.

[0023] The ring assembly 112 is an annular member that is disposed around the substrate W. The cylindrical member 12, the plate 14, and the ring assembly 112 are examples of components for semiconductor manufacturing equipment, and are made of SiC members formed by CVD (Chemical Vapor Deposition). The cylindrical member 12, the plate 14, and the ring assembly 112 are detachably mounted in the plasma processing chamber 10.

[0024] Components for semiconductor manufacturing equipment are subject to strict requirements for low dust generation and low contamination so as not to affect the processing within plasma processing chamber 10, and these requirements are likely to become even stricter in the future.

[0025] To achieve "low dust generation," it is necessary to select materials that are easily vaporized in plasma and have a high vapor pressure of fluoride compounds, and components that do not have structural defects such as fractured layers or pores on the surfaces exposed to plasma.

[0026] For "low contamination," it is important that the parts contain as few metallic elements as possible. In other words, parts that contain as few Na, K, Ca, Fe, Ni, Co, Cr, Mn, Mg, Y, Al, and Cu as possible, with Cu content being particularly strictly restricted. It is also important that the surfaces exposed to plasma are free of structural defects such as spalled layers and pores, and that the materials are low-density.

[0027] Silicon (Si) and SiC are low-dust and low-contamination materials, but SiC is particularly preferred as a material for semiconductor manufacturing equipment components. SiC is lightweight, low-cost, and harder than silicon, and when made into a hollow structure, it is possible to make the wall thickness as thin as possible. CVD is also the best manufacturing method, and by depositing a SiC film of the desired thickness using CVD, SiC components can be formed using the SiC film. These SiC components have high mechanical strength, are lightweight, deformable, and can be used as low-dust and low-contamination semiconductor manufacturing equipment components.

[0028] For "replaceable," lightweight is preferable, and it is good to use SiC, a low-density material. Furthermore, weight can be reduced by implementing structural improvements, such as providing a hollow space within the SiC member with a SiC film formed by CVD, and furthermore, it is even more preferable to provide functions such as temperature control by flowing a heat exchange medium through the hollow space of the SiC member.

[0029] With regard to "low cost," the price of parts can be broadly categorized into raw material costs, processing costs, and fixed costs. It is important to reduce the volume of parts to keep raw material costs down, and to shorten processing times to keep processing costs down. From these perspectives, if parts for semiconductor manufacturing equipment are constructed from SiC components coated by CVD, it will be possible to meet all the requirements of low dust generation, low contamination, replaceability, and low price. Furthermore, by making the SiC components coated by CVD hollow, it is possible to achieve even greater weight reduction. Hereinafter, SiC components with SiC films coated by CVD will also be referred to as "SiC components."

[0030] The SiC member has a first portion that is deformable under load, and the thickness of the first portion of the SiC member is 0.05 mm or more and less than 1.0 mm, more preferably 0.05 mm or more and less than 0.5 mm. The first portion may be a part or the entire SiC member. When the first portion is a part of the SiC member, the SiC member has a second portion that does not deform under load, and the thickness of the second portion may be 1.0 mm or less as long as it is thicker than the thickness of the first portion.

[0031] By configuring the SiC member to be deformable under load, the electrical and thermal contacts between the SiC member and its surrounding components can be stabilized. For example, when the SiC member is placed in the plasma processing chamber 10, the accuracy of mechanical processing of the SiC member and its surrounding components or assembly errors can cause tilting or deviation, which can result in electrical and / or thermal instability at the contacts between the SiC member and its surrounding components.

[0032] In contrast, the SiC member according to the present disclosure controls the film thickness of the deformable first portion and the other second portion to be different during film formation by CVD. This allows the first portion of the SiC member to be pressed against the surrounding components by deformation when a load is applied to the SiC member, thereby enhancing adhesion between the SiC member and the surrounding components. This improves the electrical and / or thermal stability of the contact points between the SiC member and the surrounding components. However, as mentioned above, the component may be composed of only the first portion.

[0033] An example of the configuration of a SiC member will be described below with reference to Figures 2 to 5. However, the SiC member used as a part for semiconductor manufacturing equipment is not limited to the SiC member described below. Also, instead of a SiC member, a member having a carbon film formed by CVD of other materials such as carbon (C) or aluminum (Al), or a member having an aluminum film can be used.

[0034] [SiC material] Fig. 2(a) shows an example of an SiC member used in a semiconductor manufacturing device. The SiC member 15 in Fig. 2(a) has a substantially rectangular cross section, an opening 15a formed at the top, and a hollow portion (space) 15b inside, and the opening 15a and hollow portion 15b are in communication with each other.

[0035] The SiC member 15 may have one or more openings 15a of a predetermined shape and size. Gas or cooling water can be introduced as a heat exchange medium into the hollow portion 15b to control the temperature. However, the SiC member 15 can also be used without introducing gas or cooling water into the hollow portion 15b.

[0036] The thickness of the SiC member 15 does not need to be uniform across the entire surface. The portion to be deformed (first portion) is formed to a thickness of 0.05 mm or more and less than 1.0 mm, more preferably 0.05 mm or more and less than 0.5 mm. The remaining portion (second portion) is formed to a thickness greater than the first portion, 0.5 mm or more and less than 1.0 mm. The second portion can also be formed to a thickness greater than 1.0 mm. However, if the second portion is formed to a thickness greater than 1.0 mm, for example, approximately 10 mm, the CVD film formation time will be prolonged, reducing throughput and productivity. Therefore, the second portion may have a thickness of 0.5 mm or more and less than 1.0 mm. In this way, CVD film formation can thin the first portion of the SiC member 15 to a thickness less than 1.0 mm. Furthermore, the surface roughness Ra of the outer surface of the SiC member 15 is preferably 0.01 μm to 20 μm.

[0037] The SiC member 15 is not limited to a rectangular shape and may have other shapes applicable to various parts for semiconductor manufacturing equipment. Any processable structure such as necessary steps, recesses, protrusions, eaves, fins, etc. can be added to the SiC member.

[0038] 2(b) to 2(e) show, as specific examples of SiC members, the plate 14 of the shower head 13, the cylindrical member 12, a structure in which the plate 14 and the cylindrical member 12 are integrated, and the ring assembly 112. The plate 14 is an example of the plate of the shower head 13.

[0039] The plate 14 in FIG. 2(b) is fabricated by forming a SiC film with a thickness of 1.0 mm to 30 mm by CVD. The plate 14 is a disk-shaped SiC film with a diameter φ1 of 300 mm to 600 mm. A plurality of gas inlets 13c with a diameter φ2 of 0.3 mm to several mm (approximately 5 mm) penetrate the interior of the plate 14. For example, the diameter φ2 may be 5 mm or less. The gas inlets 13c may be not only round holes but also slit-shaped holes. In this case, the slit width is 1 mm or more, and there are no particular restrictions on the length.

[0040] 2(c) is a cylindrical SiC film formed by CVD with a diameter φ1 of 300 mm to 600 mm, which is slightly smaller than the diameter of the sidewall 10a of the plasma processing chamber 10, and is open on the top and bottom. The height of the cylindrical member 12 is 10 mm to 200 mm.

[0041] 2(d), the upper surface of the cylindrical member 12 is covered by the plate 14. The diameters of the plate 14 and the cylindrical member 12 are the same. The upper surface of the cylindrical member 12 and the outer peripheral surface of the plate 14 may be integrally molded or may be joined by brazing or the like.

[0042] The ring assembly 112 in FIG. 2(e) is fabricated by forming a ring-shaped SiC film by CVD. The ring assembly 112 has an inner diameter (diameter) φ3 of 200 mm to 500 mm, which is slightly larger than the diameter of the substrate W, and an outer diameter (diameter) φ1 of 300 mm to 600 mm. The height of the ring assembly 112 is 1.0 mm to 10 mm. For each SiC member, the film is formed to a thickness of 0.05 mm or more and less than 1.0 mm, more preferably 0.05 mm or more and less than 0.5 mm, in the portion to be deformed (first portion). In the other portion (second portion), the film is formed to a thickness thicker than the first portion and preferably 0.5 mm or more and less than 1.0 mm.

[0043] FIG. 2(f) is a modified example of the integrated structure 3 of the plate 14 and the cylindrical member 12 of FIG. 2(d), in which a hole for the gas inlet 13c may be additionally provided on the side surface of the cylindrical member 12.

[0044] Figures 3(a) and (b) show an example of a cross section of the AA plane in Figure 2(d). Figures 3(a) and (b) show an integrated structure 3 of SiC members in which a plate 14 and a cylindrical member 12 are integrated, and in both cases, the thickness of the central portion 12a of the cylindrical member 12 is thin.

[0045] The difference between Figures 3(a) and (b) is that the integrated structure 3 of SiC members in Figure 3(b) has hollow portions 14a and 12d inside, while Figure 3(a) does not have such hollow portions; otherwise, the structure is the same.

[0046] 3(a) and 3(b), the thickness of the central portion 12a of the cylindrical member 12 is thinner than the thickness of the upper portion 12b and the lower portion 12c thereof. In the integrated structure 3 of SiC members, the central portion 12a of the cylindrical member 12 is the first portion that can deform under load, and the thickness Ta in FIG. 3(a) is 0.05 mm or more and less than 1.0 mm, more preferably 0.05 mm or more and less than 0.5 mm.

[0047] In FIG. 3(a), the thicknesses Tb and Tc of the upper and lower portions 12b and 12c of the cylindrical member 12 may be thicker than the first portion. For example, the thicknesses Tb and Tc may be 0.5 mm or more and 1.0 mm or less. The upper and lower portions 12b and 12c of the cylindrical member 12 are second portions that do not deform under load. The thickness Td of the plate 14 may be 1 mm or more and 30 mm or less. The plate 14 is the second portion that does not deform under load.

[0048] The integrated structure 3 of the SiC member can be disposed not only on the bottom of the plasma processing chamber 10 but also on the upper surface of the cover ring 113 (see FIG. 5 ), which will be described later. In the integrated structure 3, when a load is applied from top to bottom of the plate 14, as indicated by the arrows in FIGS. 3(a) and 3(b), the central portion 12a of the cylindrical member 12 deforms in response to the load. This deformation of the central portion 12a presses the bottom of the cylindrical member 12 firmly against the peripheral members of the cylindrical member 12 (e.g., the bottom of the plasma processing chamber 10 or the upper surface of the cover ring 113), thereby enhancing adhesion. This stabilizes the contact B electrically and / or thermally. Since at least a portion of the SiC member is deformable, it can deform in response to the load. This stabilizes contact with the peripheral members without requiring fastening by screws or the like. For example, when the contact B in FIGS. 3(a) and 3(b) functions as an electrical and / or thermal contact, it can be electrically and / or thermally stabilized.

[0049] For example, when the plasma processing chamber 10 is at ground potential, the contact B, which functions as an electrical contact, can be stabilized. That is, when a load is applied from top to bottom to the plate 14, at least the central portion 12a of the cylindrical member 12 is deformed in response to the load. This deformation increases the adhesion between the SiC member and the plasma processing chamber 10 at the electrical contact B. This allows the cylindrical member 12 to be stably controlled at ground potential.

[0050] 3(b) has hollow portions 14a and 12d therein. The hollow portions 14a and 12d may be configured to serve as flow paths for a heat exchange medium such as gas or cooling water.

[0051] In this case, the thickness of the central portion 12a is the sum of the inner thickness Ta (= 0.025 mm or more and less than 0.5 mm) and the outer thickness Ta' (= 0.025 mm or more and less than 0.5 mm). In other words, the thickness of the central portion 12a is 0.05 mm (= 0.025 mm × 2) or more and less than 1.0 mm (= 0.5 mm × 2).

[0052] The thickness of the upper portion 12b and the lower portion 12c is the sum of the inner thickness Tb, Tc (= 0.25 mm or more and less than 0.5 mm) and the outer thickness Tb', Tc' (= 0.25 mm or more and less than 0.5 mm), which is 0.5 mm (= 0.25 mm x 2) or more and 1.0 mm (= 0.5 mm x 2) or less.

[0053] For example, when a heat exchange medium is passed through the hollow portions 14a and 12d in the integrated structure 3, the junction B, which functions as a thermal junction, can be stabilized. That is, when a load is applied from top to bottom on the plate 14, at least the central portion 12a of the cylindrical member 12 deforms in response to the load. This deformation increases the adhesion between the SiC member and the plasma processing chamber 10, etc. at the thermal junction B. This improves the heat removal performance when removing heat, such as heat input from the plasma, from the integrated structure 3 to the plasma processing chamber 10, etc.

[0054] Components for semiconductor manufacturing equipment made of ceramics or silicon materials cannot deform and will break or be damaged under load. In contrast, the SiC member according to the present disclosure has the SiC film formed by CVD as described above, has a structure that allows deformation without breaking, and is suitable as a component for semiconductor manufacturing equipment that also functions as an electrical contact or a thermal contact.

[0055] In other words, the SiC film is formed by CVD so that the thickness of the deformable first portion is 0.05 mm or more but less than 1.0 mm, giving the SiC member of the present disclosure strength that allows it to be deformed but not break. During fabrication, when the film is formed by CVD, the flat portions of the SiC member may be configured as the deformable first portion with a thickness of 0.05 mm or more but less than 1.0 mm, and the corner portions of the SiC member may be configured as the non-deformable second portion with a thickness of 0.5 mm or more but less than 1.0 mm. For example, the flat portions may be formed by CVD to a thickness of 0.5 mm, and the corner portions may be formed to a thickness of 1.0 mm, which is twice the thickness of the flat portions.

[0056] When a SiC component of the same shape is manufactured by sintering, the SiC will break without deforming when a load is applied to the first portion, which has a thickness of 0.05 mm or more and less than 1.0 mm. On the other hand, when the SiC film thickness in the first portion is controlled to 0.05 mm or more and less than 1.0 mm by CVD, the SiC component can be deformed and prevented from breaking.

[0057] Furthermore, the hollow portions 14a and 12d inside the SiC member shown in FIG. 3(b) allow for weight reduction and easy replacement. Furthermore, the hollow portions 14a and 12d can be used as flow paths for cooling water or other fluids to flow through them, or the SiC member, such as the cylindrical member 12, can be controlled to a desired potential, allowing for temperature and potential adjustment. For example, controlling the cylindrical member 12 at a low temperature makes it easier for reaction products to adhere to it, while controlling the cylindrical member 12 at a high temperature makes it more difficult for reaction products to adhere to it. Furthermore, setting the cylindrical member 12 to a potential with the same polarity as the reaction products in the plasma processing chamber 10 repels them, while setting the potential with the opposite polarity to the reaction products attracts them, allowing more reaction products to adhere to the cylindrical member 12.

[0058] For these reasons, it is preferable that the SiC member be configured so that its potential is adjustable, and that its temperature is adjustable.

[0059] FIG. 4 is an enlarged view of a portion of the SiC member. FIGS. 4(b) to 4(d) show an example of an SiC member 16 configured to adjust the potential and / or temperature. The SiC member 16 shown in FIG. 4(a) has an opening 15a and a hollow portion 15b formed therein, and the opening 15a and the hollow portion 15b are in communication with each other. A heat exchange medium can be passed through the hollow portion 15b. The SiC member 16, which is made of an SiC film formed by CVD, has a relatively low resistivity (several Ωcm). Therefore, when a potential is applied directly to the SiC member 16, the potential can be controlled. However, problems such as potential variations and heat generation in the SiC member 16 may occur.

[0060] Therefore, as shown in Figures 4(b) to 4(d), it is preferable that the SiC member 16 has a high-resistance conductive film 17 on the SiC film so that the potential can be adjusted. In Figure 4(b), the conductive film 17 is formed on the surface of the SiC film, and the conductive film 17 serves as a contact point with the surrounding components, and a potential is applied to the conductive film 17, which is the contact point. A heat exchange medium can be passed through the hollow portion 15b.

[0061] As shown in FIG. 4(c), high-resistance conductive films 17a and 17b may be formed on the inner surface of the SiC film of the SiC member 16. The conductive films 17a and 17b may be exposed through the opening 15a to provide contacts with peripheral components, and a potential may be applied to the contacts. The conductive films 17a and 17b are insulated by an insulating film 9. This allows different potentials V1 and V2 to be applied to the conductive films 17a and 17b exposed through the opening 15a, respectively. This allows the SiC member 16 to be controlled to different potentials V1 and V2. For example, the conductive film 17a may be controlled to a low potential and the conductive film 17b to a high potential, thereby increasing the variety of control options. In the SiC member 16 shown in FIG. 4(c), a heat exchange medium may be passed through the hollow portion 15b. Furthermore, a current may be passed through the conductive films 17a and 17b in the hollow portion 15b. The conductive films 17a and 17b may be semiconductors. This allows a potential to be applied to the conductive films 17a and 17b or the semiconductor.

[0062] As shown in Figure 4(d), a SiC member (SiC film) 16 without a hollow portion 15b may be formed by CVD, and high-resistance conductive films 17a and 17b may be formed on the surface thereof, and different powers may be applied to the conductive films 17a and 17b. This allows the conductive films 17a and 17b to be controlled to different potentials V1 and V2. The conductive films 17a and 17b in Figures 4(b) to 4(d) may be semiconductors.

[0063] By providing the conductive films 17, 17a, and 17b shown in Figures 4(b) to 4(d) on the SiC member 16, it is possible to prevent variations in potential and heat generation in the SiC member 16, and to stably control the potential to a desired level. Furthermore, the conductive films 17, 17a, and 17b shown in Figures 4(b) to 4(d) can also be used as heater electrode patterns, and may be configured to be temperature adjustable. In this case, by applying a potential to the conductive films 17, 17a, and 17b, it is possible to set the temperature controlled to be high or low for each of the conductive films 17, 17a, and 17b.

[0064] In the SiC member 16 of Fig. 4(c), the conductive films 17a and 17b can be simultaneously controlled to different temperatures and different potentials. On the other hand, in the SiC member 16 of Fig. 4(d), the conductive films 17a and 17b may not be simultaneously controlled to different temperatures and different potentials. Therefore, in the configuration of the SiC member 16 of Fig. 4(d), the conductive films 17a and 17b of the SiC member 16 are controlled to different potentials V1 and V2 or to different temperatures, respectively.

[0065] When the conductive films 17a and 17b are provided on the inner surface of the SiC member 16, any manufacturing method can be used that can form the conductive films 17a and 17b inside the SiC film of the SiC member 16 shown in Fig. 4(c) . For example, a method can be considered in which high-melting-point conductive films 17a and 17b are formed inside, and then a SiC film is formed on the conductive films 17a and 17b by CVD.

[0066] Fig. 5 shows another example of a SiC member that is a component for a semiconductor manufacturing apparatus according to one embodiment. Fig. 5 shows a ring assembly 112 formed from a SiC film by CVD as an example of the SiC member. Fig. 5 shows an enlarged view of a portion (outer periphery) of the main body 111 on which the ring assembly 112 is mounted, which is the outer periphery of the substrate W.

[0067] The ring assembly 112 is placed on a ring support surface 111b that is located on the outer periphery of the substrate W and that supports the ring assembly 112. More specifically, the main body 111 is made of aluminum, and its surface is coated with a thermally sprayed alumina film 111c. An annular cover ring 113 made of quartz is disposed on the outer periphery of the main body 111. The ring assembly 112 is placed on the annular region (ring support surface) 111b of the main body 111 and the ring support surface 113b of the cover ring 113.

[0068] An electrode 115 for the substrate is disposed inside the sprayed film 111c below the substrate W, and an electrode 114 for the ring assembly 112 is disposed inside the sprayed film 111c below the ring assembly 112. The electrodes 114 and 115 are made of a metal such as tungsten. The electrode 115 for the substrate and the electrode 114 for the ring assembly 112 may each be an attraction electrode for electrostatically attracting the substrate W and the ring assembly 112, or may be a heater electrode for controlling the temperatures of the substrate W and the ring assembly 112. Here, the description will be given assuming that they are attraction electrodes.

[0069] The thickness Tg of the ring assembly 112 above the electrode 114 is made thin enough to be deformable, so that the adhesion between the lower surface of the ring assembly 112 and the upper surface of the main body 111 is increased and the attracting force is increased if the thickness Tg is deformed when a DC voltage is applied to the electrode 114 and the ring assembly 112 is electrostatically attracted to the main body 111. Therefore, the thickness Tg of the ring assembly 112 above the electrode 114 is made thin enough to be deformable. In other words, the portion of the ring assembly 112 above the electrode 114 is the first portion that can be deformed, and its thickness Tg is equal to or greater than 0.05 mm and less than 1.0 mm.

[0070] On the other hand, the thickness of the ring assembly 112 at other times may be a thickness that does not deform. For example, the thickness Te of the ring assembly 112 above the cover ring 113 may be a thickness of 0.5 mm or more and 1.0 mm or less that does not deform, or may be a thickness of 0.05 mm or more and less than 1.0 mm that allows deformation. Similarly, the thickness Tf of the portion of the ring assembly 112 that is arranged so as to be recessed under the edge of the substrate W by the step portion 112f on the inner side may be a thickness that does not deform, or may be a thickness that allows deformation. Note that the expression that a thickness of 0.5 mm or more and 1.0 mm or less does not deform means that the thickness does not generally deform, and that the closer to 0.5 mm the thickness is, the more easily it deforms.

[0071] [Manufacturing method for SiC components] Next, an example of a method for manufacturing a SiC member according to the present disclosure will be described with reference to Fig. 6. First, as shown in Fig. 6(a), graphite is processed into a desired shape and a desired surface roughness Ra to form a base 27. The shape of the base 27 is not limited. The base 27 is not limited to graphite, and any material that can be removed by heating or chemicals, such as silicon, may be used, but in this example, a graphite base 27 is used.

[0072] Next, as shown in FIG. 6(b), a SiC film 15' is formed to a desired thickness by CVD to coat the base 27. For example, the plasma processing apparatus 1 of FIG. 1 is used to form the SiC film 15' to the desired thickness, thereby producing the SiC member 15. For example, the SiC film 15' may be formed to the desired thickness using a plasma CVD apparatus or a thermal CVD apparatus to produce the SiC member 15. The desired thickness of the SiC film 15' may be 0.05 mm or more and less than 1.0 mm in the portion that can be deformed, and 0.5 mm or more and 1.0 mm or less in the portion that does not need to be deformed.

[0073] As shown in Fig. 6(c), the graphite base 27 may have one or more holding portions 19 for the base 27. The holding portions 19 for the base 27 can be used as an inlet for the heat exchange medium. However, the inlet for the heat exchange medium may be formed in a later process.

[0074] When a SiC film is formed on the surface of the base 27 by CVD, the SiC member shown in Fig. 6(c) is formed. The SiC film may be formed by a CVD method, but is not limited to this. The SiC film may be formed by a vacuum deposition type PVD (Physical Vapor Deposition) method or an MBE (Molecular Beam Epitaxy) method.

[0075] 6(d), the surface of the SiC member 15 on which the film has been formed is processed to a surface roughness Ra of 0.01 μm to 20 μm by surface treatment. Also, the support portion 19 of the base 27 is removed.

[0076] 6(e), the base 27 on which the SiC member 15 of the SiC film is formed is heated in a high-temperature oxidizing atmosphere to remove the base 27. If the base 27 is made of graphite, as in the manufacturing method of the present disclosure, the base 27 disappears as carbon dioxide, leaving a hollow portion 15b. This completes the SiC member 15.

[0077] As described above, in the semiconductor manufacturing equipment component according to this embodiment, the first portion of the SiC member constituting the component is formed to a thickness of 0.05 mm or more and less than 1.0 mm, more preferably 0.05 mm or more and less than 0.5 mm, by forming a SiC film by CVD. This makes it possible for the first portion of the semiconductor manufacturing equipment component to be deformed.

[0078] The SiC member, which is a component of the present disclosure, can maintain a low-dust and low-contamination environment in the chamber by replaceably disposing an integrated structure 3 of a plate 14 and a cylindrical member 12 shown in FIG. 2(d) in the plasma processing chamber 10. The SiC member can be applied to semiconductor manufacturing equipment as the integrated structure 3 of a showerhead plate and a cylindrical member, as well as the showerhead plate, cylindrical member, and ring assembly 112. The SiC member may be a cover ring 113 formed of a SiC film by CVD. When the main body 111 is arranged to be movable up and down, a SiC member formed of a SiC film by CVD may be used for a bellows attached to the bottom of the main body 111 and separating the atmospheric state outside the plasma processing chamber 10 from the vacuum state inside the chamber.

[0079] The semiconductor manufacturing apparatus and components for the semiconductor manufacturing apparatus according to the presently disclosed embodiments should be considered to be illustrative in all respects and not restrictive. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The features described in the above embodiments can be configured in other ways as long as they are not inconsistent, and can be combined as long as they are not inconsistent.

[0080] The semiconductor manufacturing apparatus of the present disclosure can be applied to any of the following types of apparatus: atomic layer deposition (ALD) apparatus, capacitively coupled plasma (CCP), inductively coupled plasma (ICP), radial line slot antenna (RLSA), electron cyclotron resonance plasma (ECR), and helicon wave plasma (HWP).The components for the semiconductor manufacturing apparatus of the present disclosure can be used in any of the above types of apparatus.

[0081] Furthermore, although a plasma processing apparatus has been described as an example of a semiconductor manufacturing apparatus, the semiconductor manufacturing apparatus may be any substrate processing apparatus that performs a predetermined process on a substrate (e.g., a film formation process, an etching process, etc.), and is not limited to a plasma processing apparatus.

[0082] This application claims priority from basic application No. 2021-048613, filed with the Japan Patent Office on March 23, 2021, the entire contents of which are incorporated herein by reference. [Explanation of symbols]

[0083] 1. Plasma processing equipment 2. Control section 3 Integrated structure 2a Computer 2a1 Processing section 2a2 Storage section 2a3 communication interface 10 Plasma Processing Chamber 11 Substrate support 12 Cylindrical member 13. Shower head 13c Gas inlet 14 plates 21 Gas Source 20 Gas supply unit 30 power supply 31 RF power supply 31a First RF generation unit 31b Second RF generation unit 32a First DC generation unit 32b Second DC generation unit 40 Exhaust System 111 Main body 112 Ring Assembly W substrate

Claims

1. a processing chamber; a substrate support disposed within the processing chamber and configured to hold a substrate; a plate facing the substrate support and having a gas inlet; a cylindrical member that supports the plate and surrounds the periphery of the substrate, The plate and the cylindrical member are SiC members having a SiC film formed by CVD, the cylindrical member has a first portion that is deformable under a load; Semiconductor manufacturing equipment.

2. The SiC member part is an integrated structure of the plate and the cylindrical member. The semiconductor manufacturing apparatus according to claim 1 .

3. The SiC member has a hollow portion therein.

3. The semiconductor manufacturing apparatus according to claim 1.

4. The thickness of the first portion of the SiC member is 0.05 mm or more and less than 1.0 mm. The semiconductor manufacturing apparatus according to any one of claims 1 to 3.

5. The thickness of the first portion of the SiC member is 0.05 mm or more and less than 0.5 mm. The semiconductor manufacturing apparatus according to claim 4 .

6. the SiC member has a second portion that does not deform under load, and the thickness of the second portion is greater than the thickness of the first portion; The semiconductor manufacturing apparatus according to any one of claims 1 to 5.

7. The thickness of the second portion of the SiC member is 1.0 mm or less. The semiconductor manufacturing apparatus according to claim 6 .

8. 1. A component for use in a plasma processing chamber, comprising: The SiC member has a SiC film formed by CVD, The SiC member is a component for semiconductor manufacturing equipment, the component being disposed in a plasma processing space and having a first portion that is deformable under a load.

9. the SiC member includes at least one of a showerhead plate, a cylindrical member, an integrated structure of the showerhead plate and the cylindrical member, and a ring assembly; The component for semiconductor manufacturing equipment according to claim 8.

10. A SiC component having a SiC film formed by CVD, the SiC member has a first portion that is deformable under a load; The SiC member has a hollow portion therein. Parts for semiconductor manufacturing equipment.

11. A SiC component having a SiC film formed by CVD, the SiC member has a first portion that is deformable under a load; The thickness of the first portion of the SiC member is 0.05 mm or more and less than 1.0 mm. Parts for semiconductor manufacturing equipment.

12. The thickness of the first portion of the SiC member is 0.05 mm or more and less than 0.5 mm. The component for semiconductor manufacturing equipment according to claim 11.

13. A SiC component having a SiC film formed by CVD, the SiC member has a first portion that is deformable under a load; the SiC member has a second portion that does not deform under load, and the thickness of the second portion is greater than the thickness of the first portion; Parts for semiconductor manufacturing equipment.

14. The thickness of the second portion of the SiC member is 1.0 mm or less. The component for semiconductor manufacturing equipment according to claim 13.

15. The SiC member has a hollow portion therein.

10. A component for semiconductor manufacturing equipment according to claim 8 or 9.

16. The thickness of the first portion of the SiC member is 0.05 mm or more and less than 1.0 mm.

10. A component for semiconductor manufacturing equipment according to claim 8 or 9.

17. the SiC member has a second portion that does not deform under load, and the thickness of the second portion is greater than the thickness of the first portion; 10. A component for semiconductor manufacturing equipment according to claim 8 or 9.

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