Semiconductor device

Abstract

To provide a semiconductor device that allows for more appropriate arrangement of a metal layer.SOLUTION: A semiconductor device A1 comprises: a semiconductor element 6; a first lead 1; a second lead 2; a conductive member 71 connected to the semiconductor element 6 and a pad part 21; and a sealing resin 8. The second lead 2 projects from the sealing resin 8 in a first direction x. The second lead 2 has a metal layer 26 provided in the pad part 21, and a projection 23 projecting in a second direction y. The projection 23 has a first surface 231 that spans along a thickness direction z, faces the pad part 21 side in the first direction x, and is covered by the sealing resin 8. The first surface 231 has a first end 232 on a root side and a second end 233 on a tip side. The second end 233 is positioned closer to the pad part 21 side than the first end 232 in the first direction x.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present disclosure relates to semiconductor devices. [Background technology]

[0002] Patent Document 1 shows an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes a semiconductor element, leads, wires, and a sealing resin. After the leads, a metal layer such as Ag (silver) may be provided at the location where the wire is connected. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2018-60908

[0004] [overview] If the metal layer is provided on a portion of the lead that is exposed from the sealing resin, it may cause an unintended short circuit.

[0005] The present disclosure has been made in light of the above circumstances, and an object of the present disclosure is to provide a semiconductor device that allows for more appropriate arrangement of metal layers.

[0006] The semiconductor device provided by the present disclosure comprises a semiconductor element, a first lead having an island portion on which the semiconductor element is mounted, a second lead having a pad portion, a conductive member connected to the semiconductor element and the pad portion, and a sealing resin covering the semiconductor element, the pad portion, and the conductive member, wherein the second lead protrudes from the sealing resin in a first direction intersecting a thickness direction of the island portion, and the second lead has a metal layer provided on the pad portion and a protrusion protruding in a second direction intersecting the first direction and the thickness direction, the protrusion having a first surface that is aligned with the thickness direction, faces the pad portion in the first direction, and is covered by the sealing resin, and the first surface has a first end on the base side and a second end on the tip side, and the second end is located closer to the pad portion than the first end in the first direction.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. [Figure 2] FIG. 2 is a plan view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 3] FIG. 3 is a partial plan view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 4] FIG. 4 is a partially enlarged plan view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 5] FIG. 5 is a partially enlarged cross-sectional view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 6] FIG. 6 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 7] FIG. 7 is a side view showing the semiconductor device according to the first embodiment of the present disclosure. [Figure 8] FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. [Figure 9] FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. [Figure 10] FIG. 10 is a partial enlarged plan view showing an example of the method for manufacturing the semiconductor device according to the first embodiment of the present disclosure. [Figure 11] FIG. 11 is a partial enlarged plan view showing a first modified example of the semiconductor device according to the first embodiment of the present disclosure. [Figure 12] FIG. 12 is a partial enlarged plan view showing a second modified example of the semiconductor device according to the first embodiment of the present disclosure. [Figure 13] FIG. 13 is a partially enlarged plan view showing a third modified example of the semiconductor device according to the first embodiment of the present disclosure. [Figure 14] FIG. 14 is a partial enlarged plan view showing a fourth modified example of the semiconductor device according to the first embodiment of the present disclosure. [Figure 15] FIG. 15 is a partially enlarged plan view showing a fifth modified example of the semiconductor device according to the first embodiment of the present disclosure. [Figure 16] FIG. 16 is a partial enlarged plan view showing a sixth modification of the semiconductor device according to the first embodiment of the present disclosure. [Figure 17] FIG. 17 is a partial plan view showing a semiconductor device according to the second embodiment of the present disclosure. [Figure 18] FIG. 18 is a partially enlarged plan view showing a semiconductor device according to the second embodiment of the present disclosure. [Figure 19] FIG. 19 is a partial enlarged plan view showing a first modified example of the semiconductor device according to the second embodiment of the present disclosure.

[0009] [Detailed explanation] Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0010] The terms "first," "second," "third," etc. in this disclosure are used for identification purposes only and are not intended to impose any ranking on their objects.

[0011] In this disclosure, unless otherwise specified, the terms "a certain object A is formed on an object B" and "a certain object A is formed on an object B" include "a certain object A is formed directly on an object B" and "a certain object A is formed on an object B with another object interposed between the objects A and B." Similarly, the terms "a certain object A is disposed on an object B" and "a certain object A is disposed on an object B" include "a certain object A is disposed directly on an object B" and "a certain object A is disposed on an object B with another object interposed between the objects A and B," unless otherwise specified. Similarly, the term "a certain object A is located on an object B" includes "a certain object A is located on an object B in contact with the object B" and "a certain object A is located on an object B with another object interposed between the objects A and B," unless otherwise specified. Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in this disclosure, "a surface A faces (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0012] 1 to 9 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a first lead 1, a plurality of second leads 2, a semiconductor element 6, a plurality of conductive members 71, and a sealing resin 8. The specific package structure of the semiconductor device A1 is not limited in any way. The semiconductor device A1 may be an SOP (Small Outline Package).

[0013] FIG. 1 is a perspective view showing the semiconductor device A1. FIG. 2 is a plan view showing the semiconductor device A1. FIG. 3 is a partial plan view showing the semiconductor device A1. FIG. 4 is a partial enlarged plan view showing the semiconductor device A1. FIG. 5 is a partial enlarged cross-sectional view showing the semiconductor device A1. FIG. 6 is a bottom view showing the semiconductor device A1. FIG. 7 is a side view showing the semiconductor device A1. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3.

[0014] In these figures, the thickness direction of the present disclosure is defined as thickness direction z. A direction intersecting with thickness direction z is defined as first direction x. A direction intersecting with thickness direction z and first direction x is defined as second direction y.

[0015] The sealing resin 8 covers the semiconductor element 6 and the plurality of conductive members 71. The sealing resin 8 may cover a portion of each of the first lead 1 and the plurality of second leads 2. The sealing resin 8 may contain, for example, a black epoxy resin. The shape, etc., of the sealing resin 8 is not limited in any way, and the sealing resin 8 may have a resin main surface 81, a resin rear surface 82, two resin side surfaces 83, and two resin side surfaces 84.

[0016] The resin main surface 81 may face one side in the thickness direction z. The resin main surface 81 may be a flat surface, a curved surface, a bent surface, etc. The resin back surface 82 may face the other side in the thickness direction z. The resin back surface 82 may be a flat surface, a curved surface, a bent surface, etc.

[0017] The two resin side surfaces 83 may be located between the resin main surface 81 and the resin back surface 82 in the thickness direction z. The two resin side surfaces 83 face opposite each other in the first direction x. The resin side surfaces 83 may be flat, curved, bent, or the like.

[0018] The two resin side surfaces 84 may be located between the resin main surface 81 and the resin back surface 82 in the thickness direction z. The two resin side surfaces 84 face opposite each other in the second direction y. The resin side surfaces 84 may be flat, curved, bent, or the like.

[0019] The first lead 1 has an island portion 11. The first lead 1 may further have a plurality of extension portions 12. The first lead 1 may be formed, for example, using a lead frame Lf described below. The first lead 1 may include a metal such as Cu (copper), Ni (nickel), or Fe (iron), or an alloy thereof.

[0020] The island portion 11 may be a flat portion extending along the xy plane. The thickness direction z is the thickness direction of the island portion 11. The shape of the island portion 11 is not particularly limited and may be, for example, rectangular. The island portion 11 may be exposed from the resin rear surface 82.

[0021] The multiple extension portions 12 extend in either direction in the y direction from the island portion 11. The multiple extension portions 12 may function to support the island portion 11 in the manufacturing method of the semiconductor device A1. The multiple extension portions 12 may be exposed from the two resin side surfaces 84.

[0022] The second leads 2 are located apart from the first lead 1 when viewed in the thickness direction z. The second leads 2 may be located on both sides of the first lead 1 in the first direction x. The second leads 2 may also be aligned in the second direction y. The second leads 2 may be formed, for example, using a lead frame Lf described below. The second leads 2 may contain a metal such as Cu (copper), Ni (nickel), or Fe (iron), or an alloy thereof.

[0023] The second lead 2 has a pad portion 21 and one or more protrusions 23. The second lead 2 may have an extension portion 22.

[0024] The pad portion 21 is a portion to which the conductive member 71 is connected. There are no particular limitations on the specific shape of the pad portion 21. The pad portion 21 may be rectangular.

[0025] The extension portion 22 may extend outward in the first direction x from the pad portion 21. The shape, size, etc. of the extension portion 22 are not limited in any way. The size of the extension portion 22 in the second direction y is smaller than the size of the pad portion 21 in the second direction y. The extension portion 22 may protrude outward in the first direction x from two resin side surfaces 83 of the sealing resin 8. The portions of the extension portion 22 protruding from the resin side surfaces 83 may have a curved shape. The extension portion 22 has a tip portion 221. The tip portion 221 is the tip portion of the extension portion 22 in the first direction x.

[0026] The second lead 2 may have a lead main surface 25. The lead main surface 25 may face one side in the thickness direction z.

[0027] The second lead 2 may have a metal layer 26. The metal layer 26 is located at least in a portion of the lead main surface 25 that is included in the pad portion 21. The material of the metal layer 26 is not limited in any way and includes metals such as Ag (silver), Ni (nickel), Pd (palladium), etc., or alloys thereof. In the illustrated example, the metal layer 26 is located in a portion of the lead main surface 25 that is included in all of the pad portion 21 and part of the extension portion 22.

[0028] The one or more protrusions 23 protrude in the second direction y. The one or more protrusions 23 may be located between the pad portion 21 and the tip portion 221 in the first direction x. The second lead 2 may have two protrusions 23. The two protrusions 23 may protrude in opposite directions from each other in the second direction y. The protrusions 23 may be connected to the extension portion 22.

[0029] The protrusion 23 has a first surface 231. The first surface 231 is aligned along the thickness direction z. The first surface 231 faces the pad portion 21 side (inside) in the first direction x. The first surface 231 is covered with the sealing resin 8.

[0030] The first surface 231 has a first end 232 and a second end 233. The first end 232 is an end located on the tip side of the first surface 231 in the second direction y. The second end 233 is an end located on the base side of the first surface 231 in the second direction y. The second end 233 is located closer to the pad portion 21 (inner side) than the first end 232 in the first direction x.

[0031] There is no limitation on the specific shape of the first surface 231. The first surface 231 may include a concave curved surface. The first surface 231 may include a flat surface located between the concave curved surface and the extension portion 22.

[0032] The width of the first surface 231 in the first direction x may be larger on the first surface 231 side than on the first end 232 side.

[0033] The first surface 231 is covered with the sealing resin 8. The protrusion 23 is at least partially covered with the sealing resin 8. In the illustrated example, the entire protrusion 23 may be covered with the sealing resin 8. A part of the portion of the extension portion 22 located on the opposite side (outside) of the pad portion 21 in the first direction x with respect to the protrusion 23 may be covered with the sealing resin 8.

[0034] The distance D2 in the second direction y between the facing protrusions 23 of two adjacent second leads 2 is smaller than the distance D1 in the second direction y between the pad portions 21 of two adjacent second leads 2.

[0035] 5 is an enlarged cross-sectional view of a main part near the center in the thickness direction z of the second lead 2. As shown in the figure, the first surface 231 may be covered with a part of the metal layer 26. The side surfaces of the pad portion 21 and the part of the extension portion 22 sandwiched between the pad portion 21 and the first surface 231 may be covered with the metal layer 26.

[0036] The semiconductor element 6 is an electronic component that performs the main function of the semiconductor device A1. The specific shape of the semiconductor element 6 is not limited in any way, and may be, for example, an LSI (Large Scale Integration). In the illustrated example, the semiconductor element 6 may have an element body 61 and a plurality of electrodes 62.

[0037] The element body 61 contains a semiconductor material. The element body 61 may have built therein, for example, a circuit portion (not shown) for realizing an electrical function. The shape of the element body 61 is not limited in any way and may be, for example, a rectangular parallelepiped shape. The element body 61 may be joined to the island portion 11 by a joining material 69. The joining material 69 may be, for example, solder.

[0038] The multiple electrodes 62 are used to electrically connect the semiconductor element 6 to the outside. The specific configuration of the multiple electrodes 62 is not limited in any way. In the illustrated example, the multiple electrodes 62 may be located on one side of the element body 61 in the thickness direction z. The multiple electrodes 62 may be arranged along the four sides of the element body 61 when viewed in the thickness direction z.

[0039] The plurality of conductive members 71 electrically connect the semiconductor element 6 and the plurality of second leads 2 individually. In the illustrated example, the plurality of conductive members 71 may be connected to the pad portions 21 and the plurality of electrodes 62 of the plurality of second leads 2. The conductive members 72 may be wires, plate-shaped metal members, or the like. The conductive members 71 may contain a metal such as Au (gold), Cu (copper), or an alloy thereof. The conductive members 71 may be bonded to the metal layer 26 on the pad portion 21.

[0040] Next, the operation of the semiconductor device A1 will be described.

[0041] 10 is a partially enlarged plan view showing an example of a manufacturing method of the semiconductor device A1. The lead frame Lf includes a first lead 1 and a plurality of second leads 2, and may include tie bars 29 connecting these leads to one another. Areas of the lead main surface 25 other than areas that will become the pad portions 21 may be covered with a mask Ms. The mask Ms may be, for example, a plate-like member containing a resin or the like.

[0042] The metal layer 26 may be formed by plating, for example. When plating is performed, a plating solution Ps is applied to the lead frame Lf. At this time, the plating solution Ps may reach the spaces between adjacent second leads 2. The plating solution Ps may further flow toward the tip 221 of the extension 22. The protrusion 23 has a first surface 231, and the second end 233 is located inside (closer to the pad 21) in the first direction x than the first end 232. This allows the plating solution Ps attempting to flow inward along the first surface 231, thereby causing it to flow back toward the pad 21 in the first direction x. This reduces adhesion of the plating solution Ps to a portion of the side surface of the second lead 2 along the thickness direction z that is located outside (closer to the tip 221) in the first direction x than the first surface 231. This allows the metal layer 26 to be more appropriately positioned. Since the first surface 231 comes into contact with the plating solution Ps, in the semiconductor device A1, the first surface 231 may be covered with the plating solution Ps.

[0043] Unlike the present embodiment, if a metal layer 26 is provided on the portion of the extension portion 22 that protrudes from the sealing resin 8, there is a concern that adjacent second leads 2 may become unduly conductive due to a phenomenon such as migration when, for example, a voltage difference occurs between multiple second leads 2. According to the present embodiment, it is possible to prevent the metal layer 26 from being provided on the portion of the extension portion 22 that protrudes from the sealing resin 8, thereby reducing such a problem.

[0044] Adjacent second leads 2 have protrusions 23 facing each other, which can more reliably reduce the plating solution Ps from flowing toward the tip end 221 side.

[0045] 4, the distance D2 between the opposing protrusions 23 is smaller than the distance D1 between the adjacent pad portions 21. This makes it possible to more reliably reduce the flow of the plating solution Ps toward the tip portion 221.

[0046] The first surface 231 includes a curved surface, which allows the flow of the plating solution Ps to be controlled more smoothly.

[0047] 11 to 19 show modified examples and other embodiments of the present disclosure. In these figures, elements that are the same as or similar to those in the above-described embodiment are given the same reference numerals. Furthermore, the configurations of the various parts in each modified example and each embodiment can be appropriately combined with each other as long as no technical contradiction occurs.

[0048] 11 shows a first modified example of the semiconductor device A1. In the semiconductor device A11 of this modified example, the first surface 231 is a flat surface. When viewed in the thickness direction z, the first surface 231 is inclined with respect to the second direction y.

[0049] This modification allows for a more appropriate arrangement of the metal layer 26. As can be understood from this modification, the first surface 231 is not limited to a curved surface, and may be a flat surface.

[0050] 12 shows a second modified example of the semiconductor device A1. In the semiconductor device A12 of this modified example, the first surface 231 is a curved surface. The first surface 231 may have two step portions.

[0051] According to this modification, it is possible to more appropriately arrange the metal layer 26. As can be understood from this modification, the first surface 231 may have a shape that includes a step portion.

[0052] 13 shows a third modified example of the semiconductor device A1. In the semiconductor device A13 of this modified example, the first surface 231 is a flat surface. When viewed in the thickness direction z, the first surface 231 is inclined with respect to the second direction y. The width of the protrusion 23 in the first direction x is constant. The protrusion 23 as a whole is inclined with respect to the second direction y.

[0053] This modification allows for more appropriate placement of the metal layer 26. As can be seen from this modification, the width of the protrusion 23 in the first direction x is not limited to a configuration in which it increases toward the tip end, and may be constant.

[0054] 14 shows a fourth modified example of the semiconductor device A1. In the semiconductor device A14 of this modified example, the positions of the opposing protrusions 23 of two adjacent second leads 2 in the first direction x may be different. Furthermore, the positions of the two protrusions 23 of one second lead 2 in the first direction x are equal.

[0055] According to this modification, it is possible to more appropriately arrange the metal layer 26. According to this modification, it is possible to extend the distance between the opposing second leads 23 of adjacent second leads 2, thereby reducing defects such as short circuits.

[0056] 15 shows a fifth modified example of the semiconductor device A1. In the semiconductor device A15 of this modified example, the positions of the protrusions 23 facing each other of two adjacent second leads 2 in the first direction x may be different. Furthermore, the positions of the two protrusions 23 of one second lead 2 in the first direction x are different from each other.

[0057] According to this modification, it is possible to more appropriately arrange the metal layer 26. According to this modification, it is possible to extend the distance between the opposing second leads 23 of adjacent second leads 2, thereby reducing defects such as short circuits.

[0058] 16 shows a sixth modified example of the semiconductor device A1. In the semiconductor device A16 of this modified example, a part of the protrusion 23 may be exposed from the sealing resin 8. In the illustrated example, the resin side surface 83 intersects with the vicinity of the center part of the protrusion 23 in the first direction x when viewed in the thickness direction z.

[0059] According to this modification, it is possible to more appropriately arrange the metal layer 26. As can be understood from this modification, as long as the first surface 231 is configured to be covered with the sealing resin 8, other portions of the protrusion 23 may be configured to be exposed from the sealing resin 8.

[0060] 17 and 18 show a semiconductor device according to a second embodiment of the present disclosure. The semiconductor device A2 of this embodiment includes a plurality of second leads 2 and a plurality of second leads 3. The semiconductor device A2 may also include a third lead 4 and a fourth lead 5.

[0061] The second leads 3 are located apart from the first lead 1 and the second leads 2 when viewed in the thickness direction z. The second leads 3 may be located on both sides of the first lead 1 in the first direction x. The second leads 3 may be formed using, for example, a lead frame Lf. The second leads 3 may include a metal such as Cu (copper), Ni (nickel), or Fe (iron), or an alloy thereof.

[0062] The second lead 3 has a pad portion 31 and one or more protrusions 33. The second lead 3 may have a plurality of extension portions 32.

[0063] The pad portion 31 is a portion to which the conductive member 72 and the conductive member 73 are connected. There are no particular limitations on the specific shape of the pad portion 31. The pad portion 31 may be rectangular.

[0064] The multiple extension portions 32 may extend outward in the first direction x from the pad portion 31. The multiple extension portions 32 may be aligned in the second direction y. The shape, size, etc. of the extension portions 32 are not limited in any way. The size of the extension portions 32 in the second direction y is smaller than the size of the pad portion 31 in the second direction y. The extension portions 32 may protrude outward in the first direction x from two resin side surfaces 83 of the sealing resin 8. The portions of the extension portions 32 protruding from the resin side surfaces 83 may have a curved shape. The extension portions 32 have tip portions 321. The tip portions 321 are the tip portions of the extension portions 32 in the first direction x.

[0065] The second lead 3 may have a lead main surface 35. The lead main surface 35 may face one side in the thickness direction z.

[0066] The second lead 3 may have a metal layer 36. The metal layer 36 is located at least in a portion of the lead main surface 35 that is included in the pad portion 31. The material of the metal layer 36 is not limited in any way and includes metals such as Ag (silver), Ni (nickel), Pd (palladium), etc., or alloys thereof. In the illustrated example, the metal layer 36 is located in a portion of the lead main surface 35 that is included in all of the pad portion 31 and part of the extension portion 32.

[0067] One or more protrusions 33 protrude in the second direction y. One or more protrusions 33 may be connected to the pad portion 31 in the second direction y. The second lead 3 may have one protrusion 33. One protrusion 33 may face the protrusion 23 of the adjacent second lead 2.

[0068] The protrusion 33 has a first surface 331. The first surface 331 is aligned along the thickness direction z. The first surface 331 faces the pad portion 31 side (inside) in the first direction x. The first surface 331 is covered with the sealing resin 8.

[0069] The first surface 331 has a first end 332 and a second end 333. The first end 332 is an end located on the tip side of the first surface 331 in the second direction y. The second end 333 is an end located on the base side of the first surface 331 in the second direction y. The second end 333 is located closer to the pad portion 31 (inner side) than the first end 332 in the first direction x.

[0070] There is no limitation on the specific shape of the first surface 331. The first surface 331 may include a concave curved surface. The first surface 331 may include a flat surface located between the concave curved surface and the extension portion 32.

[0071] The width of the first surface 331 in the first direction x may be larger on the first surface 331 side than on the first end 332 side.

[0072] The first surface 331 is covered with the sealing resin 8. The protrusion 33 is at least partially covered with the sealing resin 8. In the illustrated example, the entire protrusion 33 may be covered with the sealing resin 8. A part of the portion of the extension portion 32 located on the opposite side (outside) of the pad portion 31 in the first direction x with respect to the protrusion 33 may be covered with the sealing resin 8.

[0073] The protrusion 33 may be arranged at the same position in the first direction x as the protrusion 23 of the adjacent second lead 2.

[0074] The third lead 4 is located on the opposite side of the second leads 2 in the second direction y with respect to one second lead 3. The third lead 4 may be formed using, for example, a lead frame Lf. The third lead 4 may include a metal such as Cu (copper), Ni (nickel), Fe (iron), or an alloy thereof.

[0075] The third lead 4 may have a pad portion 41 and a plurality of extension portions 42.

[0076] The pad portion 41 is a portion to which the conductive member 73 is connected. There are no particular limitations on the specific shape of the pad portion 41. The pad portion 41 may be rectangular.

[0077] The multiple extension portions 42 may extend outward in the first direction x from the pad portion 41. The multiple extension portions 42 may be aligned in the second direction y. The shape, size, etc. of the extension portions 42 are not limited in any way. The size of the extension portions 42 in the second direction y is smaller than the size of the pad portion 41 in the second direction y. The extension portions 42 may protrude outward in the first direction x from two resin side surfaces 83 of the sealing resin 8. The portions of the extension portions 42 protruding from the resin side surfaces 83 may have a curved shape.

[0078] The third lead 4 may have a lead main surface 45. The lead main surface 45 may face one side in the thickness direction z.

[0079] The third lead 4 may have a metal layer 46. The metal layer 46 is located at least in a portion of the lead main surface 45 that is included in the pad portion 41. The material of the metal layer 46 is not limited in any way and includes metals such as Ag (silver), Ni (nickel), Pd (palladium), etc., or alloys thereof. In the illustrated example, the metal layer 46 is located in a portion of the lead main surface 45 that is included in all of the pad portion 41 and part of the extension portion 42.

[0080] The fourth lead 5 may be located between the second lead 3 and the third lead 4. In the illustrated example, the fourth lead 5 may not be electrically connected to the semiconductor element 6. The fourth lead 5 protrudes outward in the first direction x from the resin side surface 83. The fourth lead 5 may be a so-called dummy lead.

[0081] The semiconductor device 6 of this embodiment may include two switching devices and a driving IC. The two switching devices may be MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). These switching devices are not limited to MOSFETs and may be other transistors such as bipolar transistors or IGBTs (Insulated Gate Bipolar Transistors).

[0082] An electrode 63 of one switching element is connected to a pad portion 31 of one second lead 3 by a conductive member 72. The electrode 63 may be, for example, a drain electrode. An electrode 64 of the switching element is connected to a pad portion 31 of the other second lead 3 by a conductive member 72. The electrode 64 may be, for example, a source electrode.

[0083] An electrode 65 of the other switching element is connected to the pad portion 41 of the third lead 4 by a conductive member 73. The electrode 65 may be, for example, a source electrode. An electrode 66 of the switching element is connected to the pad portion 31 of the other second lead 3 by a conductive member 73. The electrode 66 may be, for example, a drain electrode.

[0084] The driving IC is an element that controls the switching of the two switching elements. The driving IC is connected to the gate electrodes (not shown) of the two switching elements. The electrodes 62 of the driving IC are connected to the pads 21 of the second leads 2 by the conductive members 71.

[0085] According to this embodiment, the metal layer 36 can be more appropriately positioned. As can be understood from this embodiment, when a plurality of extension portions 32 are connected to the pad portion 31, the presence of a portion of the pad portion 31 located between adjacent extension portions 32 can prevent the second lead 3 from slipping out of the sealing resin 8 in the first direction x. In this configuration, the presence of the protrusion 33 allows the metal layer 36 to be more appropriately positioned.

[0086] 19 shows a first modified example of the semiconductor device A2. In this modified example, the positions of the protrusion 33 and the protrusion 23 of the adjacent second lead 2 in the first direction x are different from each other.

[0087] According to this modification, it is possible to more appropriately arrange the metal layers 26 and 36. It is possible to extend the distance between the protrusions 23 and 33, thereby reducing unintended short circuits and the like.

[0088] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0089] [Appendix 1] A semiconductor element (6), a first lead (1) having an island portion (11) on which the semiconductor element (6) is mounted; a second lead (2) having a pad portion (21); a conductive member (71) connected to the semiconductor element (6) and the pad portion (21); a sealing resin (8) that covers the semiconductor element (6), the pad portion (21), and the conductive member (71); The second lead (2) protrudes from the sealing resin (8) in a first direction (x) intersecting a thickness direction (z) of the island portion (11), The second lead (2) has a metal layer (26) provided on the pad portion (21) and a protrusion (23) protruding in a second direction (y) intersecting the first direction (x) and the thickness direction (z), the protrusion (23) has a first surface (231) that is aligned in the thickness direction (z), faces the pad portion (21) in the first direction (x), and is covered with the sealing resin (8); The first surface (231) has a first end (232) on the base side and a second end (233) on the tip side, The second end (233) is located closer to the pad portion (21) than the first end (232) in the first direction (x). [Appendix 2] The semiconductor device (A1) according to Appendix 1, wherein the first surface (231) includes a curved surface. [Appendix 3] The semiconductor device (A11) according to Appendix 1, wherein the first surface (231) is a flat surface. [Appendix 4] 4. The semiconductor device (A1) according to any one of appendices 1 to 3, wherein the width of the protrusion (23) in the first direction (x) increases toward the tip. [Appendix 5] The semiconductor device (A13) according to any one of appendices 1 to 3, wherein the protrusion (23) has a constant width in the first direction (x). [Appendix 6] 6. The semiconductor device (A1) according to any one of appendices 1 to 5, wherein the first surface (231) is covered with the metal layer (26). [Appendix 7] The semiconductor device (A1) according to any one of appendices 1 to 6, wherein the second lead (2) has two of the protrusions (23) protruding on both sides in the second direction (y). [Appendix 8] two second leads (2) adjacent to each other in the second direction (y), The semiconductor device (A14) according to Appendix 7, wherein the projections (23) of two adjacent second leads (2) facing each other are located at different positions in the first direction (x). [Appendix 9] The semiconductor device (A14) according to appendix 8, wherein the two protrusions (23) of two adjacent second leads (2) are at the same position in the first direction (x). [Appendix 10] The semiconductor device (A15) according to appendix 8, wherein the two protrusions (23) of the two adjacent second leads (2) are located at different positions in the first direction (x). [Appendix 11] A semiconductor device (A1) according to any one of Appendices 7 to 9, wherein the distance (D2) between the protrusions (23) facing each other of two adjacent second leads (2) is smaller than the distance (D1) between the pad portions (21) of two adjacent second leads (2). [Appendix 12] 11. The semiconductor device (A1) according to any one of appendices 1 to 10, wherein the entire protrusion (23) is covered with the sealing resin (8). [Appendix 13] The semiconductor device (A16) according to any one of appendices 1 to 10, wherein a part of the protrusion (23) is exposed from the sealing resin (8). [Appendix 14] 13. The semiconductor device (A2) according to any one of appendices 1 to 12, wherein the second lead (2) has a plurality of extensions (22) connected to the pad portion (21). [Appendix 15] The semiconductor device (A2) according to appendix 14, wherein the protrusion (23) is connected to the pad portion (21). [Explanation of symbols]

[0090] A1, A11, A12, A13, A14, A15, A16, A2: semiconductor device 1: First lead 2,3: Second lead 4: Third lead 5: 4th lead 6: Semiconductor elements 8: Sealing resin 11: Island section 12:Extending part 21: Pad section 22:Extending part 23: Protrusion 25: Lead surface 26: Metal layer 31: Pad section 32: Extension part 33: Protrusion 35: Lead surface 36: Metal layer 41: Pad section 42:Extending part 45: Lead surface 46: Metal layer 61: Element body 62,63,64,65: Electrode 66: Semiconductor elements 69: Bonding material 71, 72, 73: Conductive material 81: Resin main surface 82: Resin back 83, 84: Resin side 221:Tip 231: 1st page 232 :1st end 233: 2nd end 321:Tip 331: 1st page 332 :1st end 333: 2nd end D1,D2:Distance IC: Drive Lf: Lead frame x :1st direction y: second direction z: thickness direction

Claims

1. A semiconductor element; a first lead having an island portion on which the semiconductor element is mounted; a second lead having a pad portion; a conductive member connected to the semiconductor element and the pad portion; a sealing resin that covers the semiconductor element, the pad portion, and the conductive member, the second lead protrudes from the sealing resin in a first direction intersecting a thickness direction of the island portion, the second lead has a metal layer provided on the pad portion and a protrusion protruding in a second direction intersecting the first direction and the thickness direction, the protrusion has a first surface that is aligned in the thickness direction, faces the pad portion in the first direction, and is covered with the sealing resin; the first surface has a first end on a root side and a second end on a tip side; The second end is located closer to the pad portion than the first end in the first direction.

2. The semiconductor device according to claim 1 , wherein the first surface includes a curved surface.

3. The semiconductor device according to claim 1 , wherein the first surface is a flat surface.

4. The semiconductor device according to claim 1 , wherein the width of the protrusion in the first direction increases toward the tip.

5. The semiconductor device according to claim 1 , wherein the protrusion has a constant width in the first direction.

6. 6. The semiconductor device according to claim 1, wherein said first surface is covered with said metal layer.

7. The semiconductor device according to claim 1 , wherein the second lead has two of the projections projecting on both sides in the second direction.

8. two second leads adjacent to each other in the second direction; The semiconductor device according to claim 7 , wherein the projections of two adjacent second leads facing each other are positioned at different positions in the first direction.

9. The semiconductor device according to claim 8 , wherein the two protrusions of two adjacent second leads are positioned at the same position in the first direction.

10. The semiconductor device according to claim 8 , wherein the two projections of the two adjacent second leads are positioned differently in the first direction.

11. 2. The semiconductor device according to claim 1, wherein a distance between the projections of two adjacent second leads facing each other is smaller than a distance between the pad portions of two adjacent second leads.

12. The semiconductor device according to claim 1 , wherein the entire protrusion is covered with the sealing resin.

13. The semiconductor device according to claim 1 , wherein a portion of the protrusion is exposed from the sealing resin.

14. 2. The semiconductor device according to claim 1, wherein said second lead has a plurality of extensions connected to said pad portion.

15. The semiconductor device according to claim 14 , wherein the protrusion is connected to the pad portion.

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