Phase shifter and antenna device

Abstract

To provide a phase shifter having a compact configuration capable of realizing continuous phase shift change.SOLUTION: A phase shifter includes an input line, a variable phase-shift circuit connected to the input line and having a line-forming layer made of vanadium dioxide, and an output line connected to the variable phase-shift circuit. The variable phase-shift circuit includes a plurality of heating elements arranged in an array along one surface of the line-forming layer, and a heating drive circuit arranged corresponding to each of the plurality of heating elements. Each of the plurality of heating elements is thermally connected to the line-forming layer.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a phase shifter and an antenna device. [Background technology]

[0002] Antenna devices compatible with high-frequency radio waves are being developed for mobile communications beyond the fifth generation. One example of such an antenna device is a phased array antenna composed of multiple antenna elements. A phased array antenna can form a beam with the desired directionality by changing the excitation phase of the antenna elements using a phase shifter mounted in front of the antenna elements. For example, a switched-line phase shifter can cover a phase shift range of up to 360 degrees, thereby achieving a large scanning angle. However, it is difficult to incorporate such a phase shifter into a compact antenna device with multiple patch antennas.

[0003] Patent Document 1 discloses a reflective variable phase shifter designed to continuously change the phase. The variable phase shifter in Patent Document 1 includes a 90-degree hybrid circuit, a pair of switches, a pair of first variable reactance elements, a pair of first stubs, and a pair of second variable reactance elements. The 90-degree hybrid circuit has a first port, a second port, a third port, and a fourth port. In response to a signal input from the first port, the 90-degree hybrid circuit outputs signals to the second and third ports with a phase difference of 90 degrees, but does not output any signal to the fourth port. A switch is provided at each of the second and third ports. The first variable reactance element is connected to each of the pair of switches. The switch is connected to one end of the first stub. The second variable reactance element is connected to the other end of the first stub. The switch switches between connection with the first variable reactance element and connection with one end of the first stub. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2019-029722 Summary of the Invention [Problem to be solved by the invention]

[0005] According to the variable phase shifter of Patent Document 1, the amount of phase shift can be changed by switching the connection between the second and third ports of the 90-degree hybrid circuit and the variable reactance element and stub. In the variable phase shifter of Patent Document 1, the amount of phase shift change depends on the length of the stub. In the variable phase shifter of Patent Document 1, multiple stubs with different line lengths are provided to achieve continuous phase shift change. Therefore, the variable phase shifter of Patent Document 1 requires space to accommodate the multiple stubs with different line lengths.

[0006] An object of the present disclosure is to provide a phase shifter and an antenna device with a compact configuration that can achieve continuous phase shift variation. [Means for solving the problem]

[0007] A phase shifter according to one aspect of the present disclosure includes an input line, a variable phase-shift circuit connected to the input line and having a line-forming layer made of vanadium dioxide, and an output line connected to the variable phase-shift circuit. The variable phase-shift circuit includes a plurality of heating elements arranged in an array along one surface of the line-forming layer, and a heating drive circuit arranged corresponding to each of the plurality of heating elements. Each of the plurality of heating elements is thermally connected to the line-forming layer. [Effects of the Invention]

[0008] According to the present disclosure, it is possible to provide a phase shifter and an antenna device with a compact configuration that can achieve continuous phase shift variation. [Brief explanation of the drawings]

[0009] [Figure 1] FIG. 1 is a conceptual diagram illustrating an example of the configuration of a phase shifter according to the present disclosure. [Figure 2]1 is a conceptual diagram showing a portion of an internal configuration included in a variable phase-shifting circuit according to the present disclosure. [Figure 3] 1 is a conceptual diagram showing a portion of an internal configuration included in a variable phase-shifting circuit according to the present disclosure. [Figure 4] FIG. 1 is a conceptual diagram showing an example of a circuit configuration of a heat generation drive circuit according to the present disclosure. [Figure 5] FIG. 10 is a conceptual diagram showing another example of a portion of the internal configuration included in the variable phase-shifting circuit according to the present disclosure. [Figure 6] FIG. 10 is a conceptual diagram showing another example of a portion of the internal configuration included in the variable phase-shifting circuit according to the present disclosure. [Figure 7] 1 is a block diagram illustrating an example of the configuration of an antenna device including a phase shifter according to the present disclosure. [Figure 8] 10A and 10B are conceptual diagrams for explaining an example of line formation control of a variable phase-shift circuit according to the present disclosure. [Figure 9] 10A and 10B are conceptual diagrams for explaining an example of line formation control of a variable phase-shift circuit according to the present disclosure. [Figure 10] 10A and 10B are conceptual diagrams for explaining an example of line formation control of a variable phase-shift circuit according to the present disclosure. [Figure 11] 10A and 10B are conceptual diagrams for explaining an example of line formation control of a variable phase-shift circuit according to the present disclosure. [Figure 12] 10A and 10B are conceptual diagrams for explaining an example of line formation control of a variable phase-shift circuit according to the present disclosure. [Figure 13] 10A and 10B are conceptual diagrams for explaining an example of line formation control of a variable phase-shift circuit according to the present disclosure. [Figure 14] 10 is an example of a table used to select a conductor pattern to be formed in a variable phase shift circuit according to the present disclosure. [Figure 15] FIG. 1 is a conceptual diagram illustrating an example of the configuration of a phase shifter according to the present disclosure. [Figure 16] FIG. 1 is a conceptual diagram illustrating an example of the configuration of a phase shifter according to the present disclosure. [Figure 17] FIG. 1 is a conceptual diagram illustrating an example of the configuration of a phase shifter according to the present disclosure. [Figure 18]FIG. 1 is a conceptual diagram illustrating an example of the configuration of a phase shifter according to the present disclosure. [Figure 19] FIG. 1 is a conceptual diagram illustrating an example of the configuration of a phase shifter according to the present disclosure. [Figure 20] FIG. 1 is a conceptual diagram illustrating an example of the configuration of a phase shifter according to the present disclosure. [Figure 21] FIG. 1 is a conceptual diagram illustrating an example of the configuration of a phase shifter according to the present disclosure. [Figure 22] 1 is a conceptual diagram illustrating an example of the configuration of an antenna device according to the present disclosure. [Figure 23] 1 is a conceptual diagram illustrating an example of the configuration of an antenna device according to the present disclosure. [Figure 24] 1 is a conceptual diagram illustrating an example of a matrix circuit formed on the upper surface of a substrate according to the present disclosure. [Figure 25] 1 is a conceptual diagram illustrating an example of the configuration of an antenna device according to the present disclosure. [Figure 26] 1 is a block diagram illustrating an example of a functional configuration of an antenna device according to the present disclosure. [Figure 27] FIG. 1 is a conceptual diagram illustrating an example of the configuration of a phase shifter according to the present disclosure. [Figure 28] FIG. 2 is a block diagram illustrating an example of a hardware configuration for executing control according to the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In this disclosure, the drawings used in describing each embodiment relate to one or more embodiments. Furthermore, elements included in each drawing may apply to one or more embodiments. The embodiments described below are limited to technically preferable aspects for carrying out the present disclosure, but do not limit the scope of the disclosure to the following. In all drawings used in describing the following embodiments, similar parts are designated by the same reference numerals unless otherwise specified. In the following embodiments, repeated explanations of similar configurations and operations may be omitted.

[0011] (First embodiment) First, a phase shifter according to a first embodiment will be described with reference to the drawings. For example, the phase shifter according to this embodiment is mounted in an antenna device including a patch antenna, which is a type of planar antenna. The phase shifter according to this embodiment can be applied to transmitting radio waves to be transmitted and receiving radio waves to be received from the outside. For example, the phase shifter according to this embodiment can be applied to an antenna device used for transmitting and receiving signals to be transmitted and received in high frequency bands used in mobile communications from fifth generation mobile communications onward. In the following, the electrical length of the signals to be transmitted and received on the board will be represented as λ (λ is a real number). In the following, an example will be described in which the phase shifter according to this embodiment is used for transmitting signals to be transmitted. In the following, a description of reception of signals to be received will be omitted.

[0012] (composition) 1 is a conceptual diagram showing an example of the configuration of a phase shifter according to the present disclosure. A phase shifter 10 includes an input line 11, a variable phase-shifting circuit 13, and an output line 15.

[0013] The input line 11 is connected to the variable phase shift circuit 13. The input terminal T I A signal to be transmitted is input to the input line 11. The signal to be transmitted input to the input line 11 is output to the variable phase shift circuit 13. The input line 11 is a line made of a conductor. For example, the material of the input line 11 is a metal (including alloys) such as copper, aluminum, or chromium.

[0014] The variable phase-shift circuit 13 is a stub with a line-forming layer made of vanadium dioxide (VO2). A plurality of heating elements arranged in a two-dimensional array are in thermal contact with the line-forming layer. The variable phase-shift circuit 13 is a phase-shift circuit with variable line length that utilizes the insulating-to-metallic phase transition of vanadium dioxide (VO2). The vanadium dioxide (VO2) contained in the line-forming layer is an insulating layer below the phase transition temperature T. The vanadium dioxide (VO2) contained in the insulating line-forming layer undergoes a phase transition from the insulating phase to the metallic phase when the temperature exceeds the phase transition temperature T. The line length of the variable phase-shift circuit 13 changes depending on the state of the phase transition of the vanadium dioxide (VO2) that constitutes the variable phase-shift circuit 13. The portion of the line-forming layer that is heated by the heating elements to a temperature exceeding the phase transition temperature of vanadium dioxide (VO2) undergoes a phase transition to the metallic phase. The conductor pattern formed on the line-forming layer can be controlled by selecting the heating elements. The conductor pattern formed on the line-forming layer is the line through which the phase-shift target signal propagates.

[0015] 2 and 3 are conceptual diagrams showing a portion of the internal configuration of a variable phase-shifting circuit according to the present disclosure. FIG. 2 shows a plan view of the internal configuration of the variable phase-shifting circuit without the line-forming layer. FIG. 3 shows a cross-sectional view taken along the line AA in FIG. 2. The variable phase-shifting circuit 13 includes a plurality of heat-generating drive circuits 131 and a plurality of heat-generating elements 132. The plurality of heat-generating drive circuits 131 and the plurality of heat-generating elements 132 are arranged in a two-dimensional array. One heat-generating drive circuit 131 corresponds to one heat-generating element 132. In the example shown in FIGS. 2 and 3, the heat-generating elements 132 are arranged above the heat-generating drive circuits 131. The line-forming layer 133 is arranged above the heat-generating drive circuits 131 and the heat-generating elements 132. The area A1 enclosed by the dashed line in FIG. 2 indicates the approximate area heated by one heat-generating element 132. The heat-generating drive circuits 131 and the heat-generating elements 132 are electrically connected by vias V. The plurality of heat generating drive circuits 131 that make up the same row share a common data line L d The plurality of heat generation drive circuits 131 that make up the same column are connected to a common selection line L s Connected to the data line L d and selection line L sis used to select the heat generating drive circuit 131 associated with the heat generating element 132 used to form the conductive pattern.

[0016] The variable phase shift circuit 13 is formed on a substrate 120. For example, the substrate 120 is an insulating plate-like member made of glass, epoxy resin, or the like. A matrix circuit of thin film transistors (TFTs) including a plurality of heat generating drive circuits 131 is formed on the upper surface of the substrate 120. The data lines L d and the selection line L s constitute a matrix circuit. The line forming layer 133 is formed above the plurality of heating elements 132. The substrate 120 and the line forming layer 133 are insulated from each other by an insulating layer 140. The side end portions of the line forming layer 133 are connected to the input line 11 and the output line 15 by conductive structures (not shown).

[0017] The plurality of heat generating drive circuits 131 are formed on the upper surface of the substrate 120. The plurality of heat generating drive circuits 131 are formed in a two-dimensional array when viewed from above on the upper surface of the substrate 120. The plurality of heat generating drive circuits 131 are isolated by an insulating layer 140. Each of the plurality of heat generating drive circuits 131 is associated with one heat generating element 132. Each of the plurality of heat generating drive circuits 131 is used to control the temperature of the associated heat generating element 132.

[0018] Each of the multiple heating elements 132 is associated with one heat generating drive circuit 131. The heating element 132 is disposed above the associated heat generating drive circuit 131. The heating element 132 may be disposed at a position other than above the associated heat generating drive circuit 131. The heating element 132 is electrically connected to the associated heat generating drive circuit 131 through vias V. A line forming layer 133 is formed on the upper surface of the multiple heating elements 132. The multiple heating elements 132 are isolated by an insulating layer 140. The multiple heating elements 132 may be isolated by gaps formed in the insulating layer 140. The heating elements 132 are used to heat the upper line forming layer 133. For example, the heating elements 132 are made of an alloy mainly composed of nickel (Ni) or chromium (Cr). The heating elements 132 may also be made of an alloy mainly composed of chromium (Cr), iron (Fe), and aluminum (Al). There are no particular limitations on the material of the heating elements 132. When a current is supplied, the temperature of the heating element 132 increases. For example, the supply of current to the heating element 132 can be controlled using a thin film transistor (TFT). The heat of the heating element 132 is transferred to the line formation layer 133.

[0019] The line forming layer 133 is disposed above the plurality of heating elements 132. The lower surface of the line forming layer 133 and the upper surfaces of the plurality of heating elements 132 are thermally connected. It is preferable that the lower surface of the line forming layer 133 and the upper surfaces of the plurality of heating elements 132 are in contact with each other. As long as the heat from the heating elements 132 can be transferred to the line forming layer 133 to control the phase transition, another layer may be interposed between the lower surface of the line forming layer 133 and the upper surfaces of the plurality of heating elements 132. The line forming layer 133 is partially heated by the heat generated by the heating elements 132 located below.

[0020] The line formation layer 133 contains vanadium dioxide VO2. An electrically conductive line is formed in the line formation layer 133 due to a phase transition between the insulating phase and the metallic phase of vanadium dioxide VO2. The vanadium dioxide VO2 contained in the line formation layer 133 has a composition that undergoes a phase transition from the insulating phase to the metallic phase at a phase transition temperature T. At temperatures lower than the phase transition temperature T, vanadium dioxide VO2 is in the insulating phase. At temperatures lower than the phase transition temperature T, electricity does not flow through vanadium dioxide VO2. At temperatures higher than the phase transition temperature T, vanadium dioxide VO2 is in the metallic phase. At temperatures higher than the phase transition temperature T, electricity flows through vanadium dioxide VO2. The phase transition of vanadium dioxide VO2 exhibits hysteresis during temperature rise and fall. Therefore, the phase transition between the insulating phase and the metallic phase of vanadium dioxide VO2 is adjusted within a temperature range including the phase transition temperature T.

[0021] For example, the line formation layer 133 may have a line formation layer containing vanadium dioxide VO2 to which no additional element has been added. For example, an additional element may be added to the vanadium dioxide VO2 contained in the line formation layer 133. For example, an additional element may be added to the vanadium dioxide VO2 contained in the line formation layer 133 to lower the phase transition temperature. When an additional element such as tungsten (W), magnesium (Mg), iron (Fe), molybdenum (Mo), fluorine (F), or niobium (Nb) is added, the phase transition temperature of vanadium dioxide VO2 is lowered.

[0022] The insulating layer 140 is formed on the upper surface of the substrate 120. The insulating layer 140 covers the sides of the heat generating drive circuit 131 and the heat generating elements 132. A line forming layer 133 is disposed above the insulating layer 140. For example, the insulating layer 140 is made of a general interlayer insulating material. For example, the insulating layer 140 is made of an inorganic material such as silicon dioxide. The insulating layer 140 may also be made of an organic material.

[0023] The output line 15 is connected to the variable phase shift circuit 13. The signal to be transmitted, the phase of which has been shifted by the variable phase shift circuit 13, is input to the output line 15. The signal to be transmitted input to the output line 15 is output to the output terminal T OOutput terminal T O The signal to be transmitted output from the output line 15 is sent via a patch antenna (not shown). The output line 15 is a line made of a conductor. For example, the material of the output line 15 is a metal (including alloys) such as copper, aluminum, or chromium.

[0024] FIG. 4 is a conceptual diagram showing an example of the circuit configuration of a heat generation drive circuit according to the present disclosure. Heat generation drive circuit 131 includes a transistor S, a transistor D, and a capacitor C. FIG. 4 shows an example in which a heat generation element 132 is realized by a resistive element. The connection relationship between transistor S, transistor D, capacitor C, and heat generation element 132 will be explained below. In the following explanation, parentheses indicate the directions on the paper surface of FIG. 4. Note that FIG. 4 shows an example of the circuit configuration of a heat generation drive circuit according to the present disclosure, and is not intended to limit the circuit configuration of the heat generation drive circuit.

[0025] The transistor S is used to select the heating element 132. The first end (left side) of the diffusion layer of the transistor S is connected to a voltage V data The second end (right side) of the diffusion layer of transistor S is connected to the first electrode (bottom side) of capacitor C and the gate (left side) of transistor D. The gate (top side) of transistor S is connected to the voltage V scan is connected to a source of

[0026] Capacitor C is used to control the voltage applied to the gate of transistor D. The first electrode (bottom) of capacitor C is connected to the second end (right side) of the diffusion layer of transistor S and the gate (left side) of transistor D. The second electrode (top) of capacitor C is connected to the voltage V cap The second electrode (top) of the capacitor C is connected to a voltage V cap is applied.

[0027] The transistor D is used to control the voltage supplied to the heating element 132. The first end (upper side) of the diffusion layer of the transistor D is connected to the voltage V a The first end (top side) of the diffusion layer of transistor D is connected to the voltage Va is applied. A second end (lower side) of the diffusion layer of transistor D is connected to a first electrode (lower side) of heating element 132. A gate (left side) of transistor D is connected to a second end (right side) of the diffusion layer of transistor S and a first end (lower side) of capacitor C.

[0028] The first end (upper side) of the heating element 132 is connected to the second end (lower side) of the diffusion layer of the transistor D. The second end (lower side) of the heating element 132 is connected to the voltage V k The second end (bottom side) of the heating element 132 is connected to a voltage V k A voltage V is applied. scan When the transistor S transitions to the ON state by applying the voltage V data and voltage V cap The difference voltage between V and V is applied to capacitor C. When capacitor C is fully charged, transistor S transitions to the OFF state. After transistor S transitions to the OFF state, capacitor C maintains the voltage, and transistor D continues to remain ON according to that potential. When transistor D is ON, voltage V a and voltage V k A voltage corresponding to the potential difference between the two electrodes and a current corresponding to the resistance value of the heating element 132 flows, causing the heating element 132 to generate heat. The heat generated in the heating element 132 is transferred to the line forming layer 133 that is in thermal contact with the heating element 132.

[0029] 5-6 are conceptual diagrams showing another example of a portion of the internal configuration of a variable phase-shifting circuit according to the present disclosure. FIGS. 5-6 show an example in which a heating element is disposed diagonally above a heating drive circuit. FIG. 5 shows a plan view of the internal configuration of the variable phase-shifting circuit without the line-forming layer. FIG. 6 shows a cross-sectional view taken along line BB in FIG. 5. In the example shown in FIGS. 5-6, the variable phase-shifting circuit includes a plurality of heating drive circuits 135 and a plurality of heating elements 136. The heating drive circuit 135 has the same configuration as the heating drive circuit 131. The heating element 136 has the same configuration as the heating element 132. The plurality of heating drive circuits 135 and the plurality of heating elements 136 are arranged in a two-dimensional array. One heating element 136 corresponds to one heating drive circuit 135. The substrate 120 and the line-forming layer 133 are insulated from each other by insulating layers 141 and 142.

[0030] In the example of FIGS. 5 and 6, the heating element 136 is arranged diagonally above the heating drive circuit 135. In FIG. 5, the area inside the area A2 enclosed by the dashed line frame indicates the approximate area heated by one heating element 136. The heating drive circuit 135 and the heating element 136 are electrically connected by contact electrodes H1 and H2. The multiple heating drive circuits 135 that make up the same row share a common data line L d The plurality of heat generation drive circuits 135 that make up the same column are connected to a common selection line L s Connected to the data line L d and selection line L s is used to select the heat generating drive circuit 131 associated with the heat generating element 136 used to form the conductive pattern.

[0031] 7 is a block diagram showing an example of the configuration of an antenna device including a phase shifter according to the present disclosure. The antenna device 1 includes a phase shifter 10 and a control circuit 17. The control circuit 17 is a circuit that controls the phase shifter 10. For example, the control circuit 17 is implemented by a microcomputer including a processor and a memory. The control circuit 17 controls the heat generating drive circuit 131 included in the variable phase shift circuit 13 of the phase shifter 10 to control the conductor pattern of the line forming layer 133. The capacitance of the variable phase shift circuit 13 is adjusted according to the control of the control circuit 17. Note that the control circuit 17 may be configured as a component of the phase shifter 10.

[0032] [Track formation control] Next, line formation control in the variable phase-shifting circuit 13 will be described with reference to the drawings. FIGS. 8 to 13 are conceptual diagrams for explaining an example of line formation control of the variable phase-shifting circuit according to the present disclosure. FIGS. 8 to 13 show an example in which conductive portions (lines) are formed in the variable phase-shifting circuit according to the present disclosure. FIGS. 8 to 13 are plan views of the variable phase-shifting circuit viewed from above. The extension line E is a conductive portion formed in the line-forming layer 133. The extension line E is indicated by hatching that is different from that of the non-conductive portion. The extension line E is formed with its origin at the output end of the input line 11 and its end at the input end of the output line 15. The extension line E electrically connects the input line 11 and the output line 15. When the extension line E is not formed between the input line 11 and the output line 15, the phase shifter 10 including the variable phase-shifting circuit 13 does not function. That is, a patch antenna (not shown) having a phase shifter without the extension line E is set to the OFF state.

[0033] Fig. 8 shows an example in which a linear extension line is formed from the output end of the input line to the input end of the output line. Fig. 8 shows an example of an extension line E1 that is the shortest extension line formed between the input line 11 and the output line 15. The extension line E1 is a reference line for the extension lines shown in Figs. 9 to 13.

[0034] FIG. 9 shows an example in which an extension line is formed that is bent from the output end of the input line toward the input end of the output line. FIG. 9 shows an example in which the extension line is folded back once in the longitudinal direction of variable phase-shifting circuit 13 (the vertical direction on the paper). In the example of FIG. 9, extension line E extends from above the output end of input line 11 and extends upward by half the desired line length along the left side of variable phase-shifting circuit 13. Extension line E2 that extends upward is bent and extended to the right. Extension line E2 that reaches the right end of variable phase-shifting circuit 13 is extended downward by half the desired line length along the right side of variable phase-shifting circuit 13. By extending in this manner, a phase shift amount of a desired line length is set in variable phase-shifting circuit 13.

[0035] FIG. 10 shows an example in which an extension line is formed that is bent from the output end of the input line toward the input end of the output line. FIG. 10 shows an example in which the extension line is folded back once in the longitudinal direction of the variable phase-shifting circuit 13 (the vertical direction on the paper). In the example of FIG. 10, the extension line E3 extends from above the output end of the input line 11 and extends upward by half the desired line length along the left side of the variable phase-shifting circuit 13. The upwardly extending extension line E3 is then bent and extended to the right. After reaching the right end of the variable phase-shifting circuit 13, the extension line E3 is extended downward by half the desired line length along the right side of the variable phase-shifting circuit 13. By extending in this manner, a phase shift amount of the desired line length is set in the variable phase-shifting circuit 13. The line length of the extension line E3 (FIG. 10) is longer than that of the extension line E2 (FIG. 9). Therefore, the extension line E3 (FIG. 10) has a larger phase shift amount than the extension line E2 (FIG. 9).

[0036] 11 shows an example in which an extension line is formed that is bent from the output end of the input line toward the input end of the output line. FIG. 11 shows an example in which the extension line is folded three times in the longitudinal direction of variable phase-shifting circuit 13 (the vertical direction on the page). In the example of FIG. 11, extension line E4 extends from above the output end of input line 11 and extends upward by one-fourth of the desired line length along the left side of variable phase-shifting circuit 13. Extension line E4 that has extended upward by one-fourth of the desired line length is extended to just before the center of variable phase-shifting circuit 13 and then extended downward by one-fourth of the desired line length. Extension line E4 that has extended downward by one-fourth of the desired line length is extended to a position beyond the center of variable phase-shifting circuit 13 and then extended upward by one-fourth of the desired line length. The extension line E4 is extended upward by a quarter of the desired line length, then bends and extends to the right. After reaching the right end of the variable phase-shifting circuit 13, the extension line E4 is extended downward by a quarter of the desired line length along the right side of the variable phase-shifting circuit 13. By extending the line in this manner, a phase shift amount of the desired line length is set in the variable phase-shifting circuit 13. The line length of the extension line E4 (FIG. 11) is longer than that of the extension line E3 (FIG. 10). Therefore, the phase shift amount of the extension line E4 (FIG. 11) is greater than that of the extension line E3 (FIG. 10).

[0037] 12 shows an example in which an extension line is formed that is bent from the output end of the input line toward the input end of the output line. FIG. 12 shows an example in which the extension line is folded three times in the longitudinal direction of variable phase-shifting circuit 13 (the vertical direction on the page). FIG. 12 shows an example in which the two folding patterns in the example of FIG. 11 are asymmetric. For example, extension line E5 extended from the top of the output end of input line 11 is extended upward by two-sixths (one-third) of the desired line length along the left side of variable phase-shifting circuit 13. Extension line E5 extended upward by two-sixths (one-third) of the desired line length is extended to just before the center of variable phase-shifting circuit 13, and then extended downward by two-sixths (one-third) of the desired line length. The extension line E5, which has been extended downward by two-sixths (one-third) of the desired line length, is extended to a position beyond the center of the variable phase-shifting circuit 13 and then extended upward by one-sixth of the desired line length. The extension line E5, which has been extended upward by one-sixth of the desired line length, is then bent and extended to the right. The extension line E5, which has reached the right end of the variable phase-shifting circuit 13, is extended downward by one-sixth of the desired line length along the right side of the variable phase-shifting circuit 13. By extending in this manner, a phase shift amount of the desired line length is set in the variable phase-shifting circuit 13. As in the example of FIG. 12, by setting multiple lines with different turnback positions, the line length of the extension line can be fine-tuned.

[0038] FIG. 13 shows an example in which an extension line is formed that is bent from the output end of the input line toward the input end of the output line. FIG. 12 shows an example in which the extension line is folded once in the longitudinal direction (the up-down direction on the paper) of variable phase-shifting circuit 13 and folded four times in the lateral direction (the left-right direction on the paper). FIG. 13 shows an example in which an extension line with an arbitrary conductor pattern is set. For example, extension line E6 is extended from above the output end of input line 11 and extended upward along the left side of variable phase-shifting circuit 13. The upwardly extended extension line E6 is bent and extended to the right. When extension line E6 reaches the right end of variable phase-shifting circuit 13, it is extended downward while repeatedly bending left and right. By extending in this manner, a desired phase shift amount for the line length is set in variable phase-shifting circuit 13. As in the example of Figure 13, by setting a line with an arbitrary shaped conductor pattern, the line length of the extension line can be finely adjusted.

[0039] 14 is an example of a table (phase shift table 130) used to select a conductor pattern of an extension line formed in a variable phase shift circuit according to the present disclosure. The phase shift table 130 includes a conductor pattern P corresponding to a desired phase shift amount. c is stored. Conductor pattern P c The conductor pattern P c The amount of phase shift 0 corresponds to an address indicating the position of the heating element 132 that generates heat to form the conductive pattern P c1 The phase shift amount 1 / 4λ corresponds to the conductor pattern P c2 The phase shift amount 1 / 2λ corresponds to the conductor pattern P c3 For example, a desired phase shift amount is set via an input device (not shown). The control circuit 17 selects the conductor pattern P corresponding to the set desired phase shift amount. c As a result, a desired phase shift amount is set in the variable phase shift circuit 13.

[0040] (Variation) Next, modified examples of the phase shifter according to the present disclosure will be described with reference to the drawings. Hereinafter, variations of the variable phase shift circuit included in the phase shifter will be shown.

[0041] 15 is a conceptual diagram showing an example of the configuration of a phase shifter according to the first modification of the present disclosure. FIG. 15 is a plan view looking down on the variable phase shift circuit portion from an upper viewpoint. The variable phase shift circuit 13-1 included in the phase shifter 10-1 of this modification includes an extension line E 11 is formed. Extension line E 11 is bent from the output end of the input line to the input end of the output line. 11 is folded back once in the longitudinal direction of the variable phase shift circuit 13 (the vertical direction on the paper). 11 According to this modification, the bent portion of the extension line E 11 Since the bent portion is chamfered, signal loss at the bent portion is reduced.

[0042] FIG. 16 is a conceptual diagram showing an example of the configuration of a phase shifter according to Modification 2 of the present disclosure. FIG. 16 is a plan view looking down on the variable phase shift circuit portion from an upper viewpoint. The variable phase shift circuit 13-2 included in the phase shifter 10-2 of this modification has an arc-shaped upper portion. The variable phase shift circuit 13-2 includes an extension line E 12 is formed. Extension line E 12 is bent from the output end of the input line to the input end of the output line. 12 is folded back once in the longitudinal direction of the variable phase shift circuit 13 (the vertical direction on the paper). 12 The upper part of the extension line E is formed in an arc shape following the shape of the upper part of the variable phase shift circuit 13-2. 12 The heating elements 132 arranged in the area where the extension line E forms an arc are arranged in an arc shape. The heating elements 132 arranged in this area may be configured in a shape that matches the arc. According to this modification, 12 Since the upper portion of the optical fiber is formed in an arc shape, signal loss at the folded portion is reduced.

[0043] FIG. 17 is a conceptual diagram showing an example of the configuration of a phase shifter according to Modification 3 of the present disclosure. FIG. 17 is a plan view looking down on the variable phase shift circuit portion from an upper viewpoint. The variable phase shift circuit 13-3 included in the phase shifter 10-3 of this modification is square in plan view. In this modification, the extension direction of the input line 11 and the extension direction of the output line 15 are orthogonal to each other. The variable phase shift circuit 13-3 includes an extension line E 13 is formed. Extension line E 13 17, the extension line E extends from the upper part of the output end of the input line 11. 13 is extended upward along the left side of the variable phase shift circuit 13-3. 13 is extended to the right and then downwards. 13 extends leftward along the lower side of variable phase-shift circuit 13-3 and reaches the right side of the input end of output line 15. According to this modification, the degree of freedom in arranging the input and output lines is improved.

[0044] FIG. 18 is a conceptual diagram showing an example of the configuration of a phase shifter according to Modification 4 of the present disclosure. FIG. 18 is a plan view looking down on the variable phase shift circuit portion from an upper viewpoint. The variable phase shift circuit 13-4 included in the phase shifter 10-4 of this modification is square in plan view. In this modification, the extension direction of the input line 11 and the extension direction of the output line 15 are the same. The input line 11 and the output line 15 are connected to the middle of the side of the variable phase shift circuit 13-4. The variable phase shift circuit 13-4 includes an extension line E 14 is formed. Extension line E 14 18, the extension line E extends from the upper part of the output end of the input line 11. 14 is extended upward along the left side of the variable phase shift circuit 13-4. 14 is extended to the right and downward from the center. 14 The extension line E reaches the bottom side of the variable phase shift circuit 13-4. 14 is extended to the right along the bottom side and extends to the right side of the variable phase shift circuit 13-4. 14 extends upward along the right side of variable phase-shift circuit 13-4 and reaches the bottom of the output end of output line 15. According to this modification, the degree of freedom in arranging the input line, variable phase-shift circuit, and output line is improved.

[0045] FIG. 19 is a conceptual diagram showing an example of the configuration of a phase shifter according to the fifth modification of the present disclosure. FIG. 19 is a plan view looking down on the variable phase shift circuit portion from an upper viewpoint. The variable phase shift circuit 13-5 included in the phase shifter 10-5 of this modification is rectangular with long sides in the left-right direction in plan view. The input line 11 and the output line 15 are arranged along the lower side of the variable phase shift circuit 13-5. The variable phase shift circuit 13-5 includes an extension line E 15 is formed. Extension line E 1519, the extension line E extends from the upper part of the output end of the input line 11. 15 The extension line E reaches the left side of the variable phase shift circuit 13-5. 15 is extended upward along the left side and extends to the upper side of the variable phase shift circuit 13-5. 15 is extended to the right along the upper side of the variable phase shift circuit 13-5 and extends to the right side of the variable phase shift circuit 13-5. 15 The extension line E extends downward along the right side of the variable phase shift circuit 13-5 and then extends rightward along the way. 15 is extended downward and reaches the upper part of the output end of the output line 15. According to this modification, the variable phase shift circuit can be formed in a compact shape in the vertical direction.

[0046] 20 and 21 are conceptual diagrams showing an example of the configuration of a phase shifter according to the sixth modification of the present disclosure. FIG. 20 is a plan view looking down on the variable phase-shifting circuit portion from an upper viewpoint. FIG. 21 is an enlarged view showing the heat generation state of the heating element 132 included within the range of the dashed frame R in FIG. 20. The variable phase-shifting circuit 13-6 included in the phase shifter 10-6 of this modification is a rectangle with its long sides in the vertical direction in a plan view. The variable phase-shifting circuit 13-6 of this modification includes heating elements 132-1 and 132-2. The aspect ratio of the heating element 132-2 is larger than the aspect ratio of the heating element 132-1. The heating element 132-1 is located within the region R above the input line 11 and the output line 15. E1 The heating element 132-2 is disposed in the region R E2The heating elements 132-2 are allocated to a wider area of ​​the line formation layer 133 than the heating elements 132-1. The variable phase-shift circuit 13-6 of this modification is configured by combining the heating elements 132-1 and 132-2 of different shapes. According to this modification, the number of heating elements included in the variable phase-shift circuit can be reduced, thereby improving the yield of the heating elements.

[0047] As described above, the phase shifter according to this embodiment includes an input line, a variable phase-shift circuit, and an output line. The input line is connected to a signal source of a signal to be transmitted. The variable phase-shift circuit is connected to the input line. The variable phase-shift circuit has a line-forming layer made of vanadium dioxide. The variable phase-shift circuit has a plurality of heating elements and a plurality of heating drive circuits. The plurality of heating elements are arranged in an array along one surface of the line-forming layer. Each of the plurality of heating drive circuits is arranged corresponding to a respective one of the plurality of heating elements. Each of the plurality of heating elements is thermally connected to the line-forming layer. The output line is connected to the variable phase-shift circuit.

[0048] The phase shifter of this embodiment has a line-forming layer made of vanadium dioxide. By controlling the temperature of each of the multiple heating elements, extended lines are formed in the line-forming layer in accordance with the insulating-metallic phase transition of vanadium dioxide. By controlling the line length of the extended lines formed, a continuous phase shift amount can be set in the line-forming layer. The phase shifter of this embodiment does not need to provide multiple phase-shift lines corresponding to the phase shift length, and can be configured compactly. Therefore, the phase shifter of this embodiment can provide a compact phase shifter that can achieve continuous phase shift changes.

[0049] In one aspect of the present embodiment, each of the plurality of heat generating drive circuits, in accordance with the selection of the heat generating element, causes the heat generating element to generate heat up to a temperature exceeding the phase transition temperature of the vanadium dioxide contained in the line formation layer. According to this aspect, by selecting the heat generating element in accordance with the amount of phase shift, a desired amount of phase shift can be set.

[0050] In one aspect of the present embodiment, the vanadium dioxide contained in the line formation layer in contact with the heated heating element undergoes a phase transition to a metallic phase above a phase transition temperature, thereby forming an extension line in the line formation layer that electrically connects the input line and the output line. According to this aspect, the phase of a signal to be transmitted can be shifted according to the line length of the extension line formed in the line formation layer.

[0051] In one aspect of the present embodiment, an extension line that linearly connects the input line and the output line is formed in the line formation layer. According to this aspect, a signal to be transmitted can be sent without phase shift.

[0052] In one aspect of the present embodiment, a bent extension line is formed in the line formation layer. According to this aspect, by adjusting the line length of the bent extension line, it is possible to shift the phase of the signal to be transmitted by a desired amount.

[0053] In one aspect of the present embodiment, an extension line having an arbitrary shape is formed on the line formation layer. According to this aspect, by adjusting the line length of the extension line to an arbitrary shape, it is possible to shift the phase of the signal to be transmitted by a desired amount of phase shift.

[0054] In one aspect of the present embodiment, the variable phase-shift circuit is configured by combining heating elements of different shapes. According to this aspect, the number of heating elements included in the variable phase-shift circuit can be reduced by changing the shape of the heating elements depending on the extension direction of the extension line. Therefore, according to this aspect, the number of heating elements can be reduced, thereby improving the yield of the heating elements.

[0055] In one aspect of the present embodiment, any of the plurality of heating elements included in the line formation layer is arranged so that the extension line forms an arc. According to this aspect, by increasing the curvature of the folded-back portion of the extension line, loss of the transmission signal at the folded-back portion of the extension line can be reduced.

[0056] In one aspect of this embodiment, a phase-shift table in which conductor patterns corresponding to the amount of phase shift are registered is used to select a heat generating drive circuit that causes a heat generating element used to form an extension line corresponding to the conductor pattern corresponding to the desired amount of phase shift to generate heat. The extension line corresponding to the conductor pattern set using the phase-shift table is formed on the line formation layer. According to this aspect, the desired amount of phase shift can be easily set using the phase-shift table.

[0057] (Second embodiment) Next, an antenna device according to a second embodiment will be described with reference to the drawings. The planar antenna of this embodiment includes a patch antenna, which is a type of planar antenna. In the following, descriptions of a transmitting device that transmits radio waves from the planar antenna and a receiving device that receives radio waves received by the planar antenna will be omitted. For example, the planar antenna of this embodiment is used for transmitting and receiving electromagnetic waves in a high frequency band that is expected to be applied to mobile communications of B5G (Beyond 5th Generation), which follows 5G (5th Generation). For example, the planar antenna of this embodiment is used for transmitting and receiving millimeter wave and terahertz wave signals. Note that the planar antenna of this embodiment may also be used for transmitting and receiving signals other than millimeter wave and terahertz wave signals.

[0058] The antenna device of this embodiment includes the phase shifter according to the first embodiment. For example, the phase shifter is formed using a manufacturing process technology for a micro LED (Light-Emitting Diode) display. The planar antenna of this embodiment includes a switching element formed using a manufacturing process technology for a thin film transistor (TFT). The planar antenna of this embodiment is manufactured by combining a manufacturing process technology for a micro LED display (micro LED process technology) and a manufacturing process technology for a thin film transistor (TFT process technology). Note that the planar antenna of this embodiment may also be manufactured using a technology other than the micro LED process technology and the TFT process technology.

[0059] (composition) Fig. 22 is a conceptual diagram showing an example of the configuration of an antenna device according to the present disclosure. Fig. 22 shows an example of the external appearance of an antenna device. The antenna device 2 includes a planar antenna 200. An antenna array 20 is arranged on the upper surface of the planar antenna 200. The antenna array 20 is composed of a plurality of patch antennas P. The plurality of patch antennas P are arranged in a two-dimensional array. In the example of Fig. 22, the plurality of patch antennas P are arranged along the X direction and the Y direction. The plurality of patch antennas P are arranged in a phased array. That is, the antenna device 2 functions as a phased array antenna.

[0060] The antenna device 2 is mounted with a first drive circuit 271 and a second drive circuit 272. The first drive circuit 271 and the second drive circuit 272 are circuits used to select the patch antenna P to be driven. By driving the first drive circuit 271 and the second drive circuit 272, it is possible to select an address associated with each patch antenna P. The first drive circuit 271 and the second drive circuit 272 may be formed on the surface of the planar antenna 200 or may be formed inside the planar antenna 200.

[0061] Fig. 23 is a conceptual diagram showing an example of the configuration of an antenna device according to the present disclosure. Fig. 23 is a cross-sectional view of the antenna device 2 cut along a cutting line passing through the patch antenna P. The antenna device 2 has the patch antenna P, an insulating layer, a ground layer, a signal line layer, a substrate 220, and a phase shifter forming layer. The insulating layer includes a first insulating layer 241, a second insulating layer 242, a third insulating layer 243, and a fourth insulating layer 244. The ground layer includes a first ground layer 251, a second ground layer 252, and a third ground layer 253. The signal line layer includes a signal line L s1 and signal line L s2 The phase shifter forming layer has a phase shifter 21 formed thereon that corresponds to the patch antenna P. FIG. 23 shows an example in which the signal line layer and the patch antenna P are formed on different layers. The antenna device according to this embodiment may also be configured as a coplanar antenna in which the signal line layer and the patch antenna P are formed on the same layer. Note that the third ground layer 253 may not be provided, and the substrate 220 may be disposed at the position of the fourth insulating layer 244.

[0062] The antenna array 20 is disposed on the upper surface of the first insulating layer 241. The antenna array 20 is composed of a plurality of patch antennas P. Although FIG. 23 illustrates a single patch antenna P, the antenna device 2 includes a plurality of patch antennas P. The plurality of patch antennas P are arranged in a lattice pattern along two directions that are orthogonal to each other. The plurality of patch antennas P are arranged in a phased array. The patch antenna P is a plate-shaped radiating element. For example, the patch antenna P is rectangular. The shape of the patch antenna P is not limited to rectangular, and may be circular or another shape.

[0063] The patch antenna P is fed by an electromagnetic coupling feeding method. The patch antenna P is connected to the signal line L formed below the second insulating layer 242 via the slot S0. s2 The patch antenna P and the signal line L are electromagnetically coupled through the slot S0. s2 The patch antenna P is excited by electromagnetic coupling between the signal line L and the slot S0. s2 The impedance can be matched by arranging the open end of the slot S0 and adjusting the dimensions of the slot S0. For example, the shape of the slot S0 is rectangular. For example, the shape of the slot S0 may be a shape other than a rectangle, such as a dogbone shape.

[0064] The patch antenna P has a structure equivalent to a microstrip line with open ends. The resonant frequency of the patch antenna P is an integer multiple of half the wavelength, which corresponds to the length of one side of the patch antenna P. The size of the patch antenna P is set according to the wavelength of the radio waves to be transmitted. Because the patch antenna P is an open-type resonator that resonates at the resonant frequency, its Q value decreases due to radio wave radiation. To avoid this decrease in Q value due to radio wave radiation and enable the patch antenna P to function as a resonator, it is preferable that the dielectric constant of the material of the insulating layer and the substrate 220 be as high as possible. The higher the dielectric constant of the material of the insulating layer and the substrate 220, the more effectively radio wave transmission can be suppressed. If the material of the insulating layer and the substrate 220 is high-dielectric, the thickness of the insulating layer and the substrate 220 and the width of the patch antenna P are set to be sufficiently small compared to the wavelength of the radio waves used in communication. For example, if the material of the insulating layer and the substrate 220 is low-dielectric, a microstrip antenna can be constructed by increasing the thickness of the insulating layer and the width of the patch antenna P relative to the wavelength of the radio waves to be transmitted, thereby increasing the radiation amount.

[0065] It is preferable that the patch antenna P radiates signals (radio waves) easily into space. In contrast, it is preferable that internal wiring such as signal lines and wires radiate signals less easily. In other words, the smaller the dielectric constant required around the patch antenna P, the better, and the larger the dielectric constant required around the internal wiring, the better. Therefore, it is preferable to apply different manufacturing processes to the structure around the patch antenna P and the structure around the internal wiring. For example, the structure of the antenna device 2 of this embodiment can be realized by applying a technique in which the structure around the patch antenna P is formed using a liquid crystal process and the structure around the internal wiring is formed using a thin-film process.

[0066] The first insulating layer 241 forms the surface of the antenna device 2. The first insulating layer 241 is laminated on the upper surface of the first ground layer 251. For example, the material of the first insulating layer 241 is glass, glass epoxy, tetrafluoroethylene, epoxy, etc. As long as it is possible to transmit and receive radio waves for communication, the first insulating layer 241 may be made of a material other than glass, glass epoxy, tetrafluoroethylene, epoxy, etc.

[0067] The first ground layer 251 is laminated on the upper surface of the second insulating layer 242. The first insulating layer 241 is laminated on the upper surface of the first ground layer 251. For example, the material of the first ground layer 251 is a metal (including alloys) such as copper, aluminum, or chromium. The potential of the first ground layer 251 is the ground potential. An opening is formed in the first ground layer 251. The opening formed in the first ground layer 251 is called a slot S0. The slot S0 is formed below the patch antenna P. Directly below the slot S0, a signal line L s2 The signal line L s2 The signal propagating through the signal line L s2 and the patch antenna P, the electromagnetic coupling EC between the patch antenna P and the ground wave propagates to the patch antenna P.

[0068] The second insulating layer 242 is formed above the signal line layer. A first ground layer 251 is formed on the upper surface of the second insulating layer 242. An opening (air gap) may be formed in the portion of the second insulating layer 242 below the patch antenna P. When the air gap is formed, the signal line L s2 The dielectric constant between the signal line L and the patch antenna P decreases. s2 An air gap may be formed to reduce the dielectric constant between the patch antenna P and the second insulating layer 242. For example, the material of the second insulating layer 242 may be glass, glass epoxy, tetrafluoroethylene, epoxy, or the like. As long as the second insulating layer 242 is capable of transmitting and receiving radio waves for communication, it may be made of a material other than glass, glass epoxy, tetrafluoroethylene, or epoxy.

[0069] The signal line layer is formed on the upper surface of the third insulating layer 243. The second insulating layer 242 is laminated on the upper surface of the signal line layer. s1 and signal line L s2 Signal line L s1 (first signal line) is connected to a signal source (not shown). s1 The signal transmitted from the signal source propagates through the signal line L. s1 The signal before phase shift propagates through the signal line L. s2The signal line L (second signal line) is extended to pass under the slot S0 of the first ground layer 251. s2 A capacitance is formed between the signal line L and the patch antenna P according to the dielectric constants of the first insulating layer 241 and the second insulating layer 242. s2 The signal whose phase has been shifted by the phase shifter 21 is propagated to the patch antenna P by electromagnetic coupling EC via the slot S0.

[0070] The third insulating layer 243 is formed above the second ground layer 252. A signal line layer is formed on the upper surface of the third insulating layer 243. For example, the material of the third insulating layer 243 is glass, glass epoxy, tetrafluoroethylene, epoxy, or the like. As long as the third insulating layer 243 is capable of transmitting and receiving radio waves for communication, it may be made of a material other than glass, glass epoxy, tetrafluoroethylene, or epoxy.

[0071] The second ground layer 252 is laminated on the upper surface of the fourth insulating layer 244. The second insulating layer 242 is laminated on the upper surface of the second ground layer 252. For example, the material of the second ground layer 252 is a metal (including alloys) such as copper, aluminum, or chromium. The potential of the second ground layer 252 is the ground potential. Two types of openings are formed in the second ground layer 252. The two types of openings formed in the second ground layer 252 are called slots S1 and slots S2. The slots S1 are for connecting the signal line L s1 and the phase shifter 21. The slot S2 is s2 and the phase shifter 21. s1 A capacitance is formed between the signal line L and the phase shifter 21 according to the dielectric constants of the third insulating layer 243 and the fourth insulating layer 244. Similarly, s2 Between the signal line L and the phase shifter 21, a capacitance is formed according to the dielectric constants of the third insulating layer 243 and the fourth insulating layer 244. s1 The signal propagating through the signal line L is propagated to the phase shifter 21 by electromagnetic coupling EC via the slot S1. The signal propagating through the phase shifter 21 is phase-shifted by the phase shift amount set in the phase shifter 21, and is then coupled to the signal line L by electromagnetic coupling EC via the slot S2. s2 propagates to.

[0072] The fourth insulating layer 244 is formed above the phase shifter-forming layer. A second ground layer 252 is formed on the upper surface of the fourth insulating layer 244. For example, the material of the fourth insulating layer 244 is glass, glass epoxy, tetrafluoroethylene, epoxy, or the like. As long as the fourth insulating layer 244 is capable of transmitting and receiving radio waves for communication, the fourth insulating layer 244 may be made of a material other than glass, glass epoxy, tetrafluoroethylene, or epoxy.

[0073] A phase shifter 21 is formed on the phase shifter forming layer for each patch antenna P. The phase shifter forming layer is formed on the upper surface of the substrate 220. A fourth insulating layer 244 is formed on the upper surface of the phase shifter forming layer. Two types of openings (slots S1 and S2) are formed in the second ground layer 252 above the phase shifter 21. A signal line L is formed above the phase shifter 21 via the slot S1. s1 Above the phase shifter 21 via the slot S2, a signal line L s2 The signal line L s1 The signal propagating through the signal line L is propagated to the phase shifter 21 by electromagnetic coupling EC via the slot S1. The signal propagating through the phase shifter 21 is phase-shifted by the phase shift amount set in the phase shifter 21, and is then coupled to the signal line L by electromagnetic coupling EC via the slot S2. s2 propagates to.

[0074] The substrate 220 is disposed below the phase shifter formation layer. A matrix circuit, TFT wiring, and phase shifters 21 are formed on the upper surface of the substrate 220. The matrix circuit has a structure in which a plurality of thin film transistors (TFTs) are arranged in a two-dimensional array. For example, the TFTs included in the matrix circuit are formed using TFT process technology. The TFT wiring includes a plurality of selection lines used to select the phase shifters 21 and a plurality of data lines used to write phase shift data to the phase shifters 21. For example, the material of the substrate 220 is glass, glass epoxy, tetrafluoroethylene, epoxy, or the like. As long as the substrate 220 is capable of transmitting and receiving radio waves for communication, it may be made of a material other than glass, glass epoxy, tetrafluoroethylene, epoxy, or other resin.

[0075] 24 is a conceptual diagram showing an example of a matrix circuit formed on the upper surface of a substrate according to the present disclosure. FIG. 24 is a plan view of the surface on which the matrix circuit is formed, viewed from above. TFT wiring is formed in the phase shifter formation layer. The TFT wiring is a selection line group G including a plurality of selection lines. Ls and a data line group G consisting of a plurality of data lines. Ld Each of the multiple selection lines included in the selection line group GLs is used to select the phase shifter 21. Ld Each of the plurality of data lines included in the group G is used to propagate a signal emitted through the phase shifter 21. The TFT wiring includes a group of selection lines G Ls and data line group G Ld Other wiring may also be included.

[0076] A third ground layer 253 is disposed on the lower surface of the substrate 220. The third ground layer 253 is made of a conductor. For example, the material of the third ground layer 253 is a metal (including alloys) such as copper, aluminum, or chromium. The potential of the third ground layer 253 is a ground potential. Therefore, a capacitance according to the dielectric constant of the substrate 220 is formed between the phase shifter 21 and the third ground layer 253.

[0077] From the signal source (not shown) to the signal line L s1 The signal supplied to the phase shifter 21 is propagated to the phase shifter 21 by electromagnetic coupling via the slot S1. The signal propagated to the phase shifter 21 is phase-shifted according to the phase shift amount set in the phase shifter 21. The phase-shifted signal is then transmitted from the phase shifter 21 to the signal line L by electromagnetic coupling via the slot S2. s2 The signal whose phase has been shifted by the phase shifter 21 propagates to the signal line L s2 The signal that has reached the area below the patch antenna P propagates along the signal line L due to electromagnetic coupling via the slot S0. s2 The signal propagates from the patch antenna P to the patch antenna P. The signal propagated to the patch antenna P is transmitted as a radio signal from a phased array antenna made up of multiple patch antennas P.

[0078] Fig. 25 is a conceptual diagram showing an example of the configuration of an antenna device according to the present disclosure. The antenna device shown in Fig. 25 differs from the antenna device shown in Fig. 23 in that a fourth ground layer is formed in the same layer as the phase shifter-forming layer. The fourth ground layer 254 is electrically connected to the third ground layer 253 by a plurality of vias 255 that penetrate the fourth insulating layer 244. The plurality of vias 255 are formed inside through holes that penetrate the fourth insulating layer 244. The fourth ground layer 254 is grounded to the same potential as the third ground layer 253 by the plurality of vias 255. Compared to the configuration of Fig. 23, the configuration of Fig. 25 allows for more reliable grounding within the antenna device.

[0079] 26 is a block diagram showing an example of the functional configuration of an antenna device according to the present disclosure. The antenna device 2 includes an antenna array 20, a phase shifter 21, a matrix circuit 22, a control circuit 28, and a signal source 29.

[0080] The matrix circuit 22 has a configuration in which a plurality of thin film transistors (TFTs) are arranged in a two-dimensional array. The matrix circuit 22 is formed using TFT process technology. Each of the plurality of TFTs included in the matrix circuit 22 corresponds to one of the plurality of patch antennas P included in the antenna array 20. For example, the TFT includes a semiconductor layer such as amorphous silicon or polysilicon. Each of the plurality of pixels formed in the matrix circuit 22 corresponds to a patch antenna P.

[0081] A phase shifter 21 is disposed for each antenna unit. The phase shifter 21 is the phase shifter 10 according to the first embodiment. The phase shifter 21 is associated with the patch antenna P. A heat generating drive circuit (not shown) included in the phase shifter 21 is associated with each of the plurality of pixels formed in the matrix circuit 22. A heat generating element (not shown) included in the phase shifter 21 generates heat in accordance with the selection of the heat generating drive circuit. An extension line having a line length according to the desired phase shift amount is set in a line forming layer (not shown) included in the phase shifter 21. The line length of the extension line is adjusted according to the set conductor pattern. As a result, a phase shift amount according to the line length of the extension line is set in the phase shifter 21.

[0082] The drive circuit 27 includes a first drive circuit 271 and a second drive circuit 272. The first drive circuit 271 is a circuit for performing addressing in the X direction. The second drive circuit 272 is a circuit for performing addressing in the Y direction. The drive circuit 27 drives the TFTs included in the matrix circuit 22 in accordance with the control of the control circuit 28. The drive circuit 27 individually drives the multiple TFTs included in the matrix circuit 22.

[0083] The control circuit 28 drives the drive circuit 27 in response to an external control signal. The control circuit 28 drives the drive circuit 27 by an active matrix drive method. The control circuit 28 drives the first drive circuit 271 and the second drive circuit 272 in conjunction with each other to designate an address associated with each patch antenna P. The control circuit 28 also outputs the external control signal to the signal source 29.

[0084] For example, the control circuit 28 is realized by a microcomputer (also called a microcomputer) or a microcontroller. For example, the control circuit 28 includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), flash memory, etc. The control circuit 28 executes control and processing according to a pre-stored program. The control circuit 28 executes control and processing according to the program in accordance with a pre-set schedule, timing, external control instructions, etc. For example, the control circuit 28 controls the antenna array 20 composed of multiple patch antennas P included in the planar antenna 200 to transmit directional radio waves from the antenna array 20. In this way, the antenna array 20 is used as a phased array antenna.

[0085] The signal source 29 is connected to the phase shifter 21 via a signal line. The signal source 29 is also connected to the control circuit 28. The signal source 29 sends a signal to the phase shifter 21 in accordance with the control of the control circuit 28. The signal source 29 may be configured to receive a signal from outside without passing through the control circuit 28.

[0086] A signal that reaches the signal input section of the phase shifter 21 through a signal line (not shown) connected to an ON-state TFT is phase-shifted by the phase shift amount set in the phase shifter 21. The phase-shifted signal propagates from the signal line to the patch antenna P by electromagnetic coupling. Radio waves derived from the signal propagated to the patch antenna P are transmitted from the patch antenna P. The radio waves transmitted from the patch antenna P are based on a signal output from a transmission circuit (not shown). There are no particular limitations on the information contained in the signal.

[0087] Furthermore, the radio waves received by the patch antenna P are received according to a capacitance based on the dielectric constant of a dielectric such as an insulating layer or a TFT substrate interposed between the patch antenna P and the signal line. The phase of the received radio waves is shifted by the phase shift amount set in the phase shifter 21. The phase-shifted signal is received by a receiving circuit (not shown) through the signal line. Information contained in the signal received by the receiving circuit is decoded by a decoder (not shown).

[0088] As described above, the antenna device of this embodiment includes the phase shifter of the first embodiment and an antenna array in which a plurality of patch antennas are arranged in a two-dimensional array. The phase shifters are arranged in correspondence with each of the plurality of patch antennas.

[0089] The antenna device of this embodiment includes a phase shifter having a line formation layer made of vanadium dioxide. By controlling the temperature of each of the multiple heating elements, an extended line is formed in the line formation layer due to a phase transition between the insulating phase and the metallic phase of vanadium dioxide. By controlling the line length of the extended line formed, a continuous phase shift amount can be stably set in the line formation layer. In the multiple phase shifters included in the antenna device of this embodiment, a continuous phase shift change with a stable phase shift amount is realized. An arbitrary phase shift amount can be set in each of the multiple patch antennas. Therefore, the antenna device of this embodiment can realize a phased array antenna capable of transmitting directional radio waves in any direction.

[0090] (Third embodiment) Next, a phase shifter according to a third embodiment will be described with reference to the drawings. The phase shifter of this embodiment has a simplified configuration of the phase shifter of the first embodiment.

[0091] FIG. 27 is a conceptual diagram showing an example of the configuration of a phase shifter according to the present disclosure. The phase shifter 30 has an input line 31, a variable phase-shifting circuit 33, and an output line 35. The input line 31 is connected to a signal source of a signal to be transmitted. The variable phase-shifting circuit 33 is connected to the input line 31. The variable phase-shifting circuit 33 has a line-forming layer made of vanadium dioxide. The variable phase-shifting circuit 33 has a plurality of heating elements arranged in an array along one surface of the line-forming layer, and a heating drive circuit arranged corresponding to each of the plurality of heating elements. Each of the plurality of heating elements is thermally connected to the line-forming layer. The output line 35 is connected to the variable phase-shifting circuit 33.

[0092] The phase shifter of this embodiment has a line-forming layer made of vanadium dioxide. By controlling the temperature of each of the multiple heating elements, extended lines are formed in the line-forming layer in accordance with the insulating-metallic phase transition of vanadium dioxide. By controlling the line length of the extended lines formed, a continuous phase shift amount can be set in the line-forming layer. The phase shifter of this embodiment does not need to provide multiple phase-shift lines corresponding to the phase shift length, and can be configured compactly. Therefore, the phase shifter of this embodiment can provide a compact phase shifter that can achieve continuous phase shift changes.

[0093] (Hardware) Next, a hardware configuration for executing the control and processing in the present disclosure will be described with reference to the drawings. Here, an information processing device 90 (computer) in FIG. 28 is given as an example of such a hardware configuration. The information processing device 90 in FIG. 28 is an example of a configuration for executing the control and processing in the present disclosure, and does not limit the scope of the present disclosure.

[0094] 28, an information processing device 90 includes a processor 91, a memory 92, an auxiliary storage device 93, an input / output interface 95, and a communication interface 96. In FIG. 28, interface is abbreviated as I / F (Interface). The processor 91, memory 92, auxiliary storage device 93, input / output interface 95, and communication interface 96 are connected to each other via a bus 98 so as to be able to communicate data with each other. The processor 91, memory 92, auxiliary storage device 93, and input / output interface 95 are also connected to a network such as the Internet or an intranet via the communication interface 96.

[0095] The processor 91 loads a program (instructions) stored in an auxiliary storage device 93 or the like into the memory 92. For example, the program is a software program for executing the control and processing in the present disclosure. The processor 91 executes the program loaded into the memory 92. The processor 91 executes the program to execute the control and processing in the present disclosure.

[0096] The memory 92 is a storage device having an area in which a program is loaded. The processor 91 loads a program stored in an auxiliary storage device 93 or the like into the memory 92. The memory 92 is realized by a volatile memory such as a DRAM (Dynamic Random Access Memory). Alternatively, a non-volatile memory such as an MRAM (Magnetoresistive Random Access Memory) may be used as the memory 92.

[0097] The auxiliary storage device 93 stores various data such as programs. For example, the auxiliary storage device 93 is realized by a local disk such as a hard disk or flash memory. Note that it is also possible to configure the system so that various data is stored in the memory 92, and omit the auxiliary storage device 93.

[0098] The input / output interface 95 is an interface for connecting the information processing device 90 to peripheral devices based on standards and specifications. The communication interface 96 is an interface for connecting to external systems and devices via a network such as the Internet or an intranet based on standards and specifications. The input / output interface 95 and the communication interface 96 may be a common interface for connecting to external devices.

[0099] Input devices such as a keyboard, mouse, and touch panel may be connected to the information processing device 90 as needed. These input devices are used to input information and settings. When a touch panel is used as the input device, a screen having the function of the touch panel serves as the interface. The processor 91 and the input devices are connected via an input / output interface 95.

[0100] The information processing device 90 may be equipped with a display device for displaying information. When a display device is equipped, the information processing device 90 is equipped with a display control device (not shown) for controlling the display of the display device. The information processing device 90 and the display device are connected via an input / output interface 95.

[0101] The information processing device 90 may be equipped with a drive device. The drive device acts as an intermediary between the processor 91 and a recording medium (program recording medium) to read data and programs stored on the recording medium and to write processing results of the information processing device 90 to the recording medium. The information processing device 90 and the drive device are connected via an input / output interface 95.

[0102] The above is an example of a hardware configuration for enabling the control and processing in the present disclosure. The hardware configuration in Figure 28 is an example of a hardware configuration for executing the control and processing in the present disclosure, and does not limit the scope of the present disclosure. A program that causes a computer to execute the control and processing in the present disclosure is also included in the scope of the present disclosure.

[0103] A program recording medium on which a program for executing the processing in this embodiment is recorded is also included in the scope of the present invention. For example, the program recording medium is a computer-readable non-transitory recording medium. The recording medium can be realized as an optical recording medium such as a CD (Compact Disc) or a DVD (Digital Versatile Disc). The recording medium may also be realized as a semiconductor recording medium such as a USB (Universal Serial Bus) memory or an SD (Secure Digital) card. The recording medium may also be realized as a magnetic recording medium such as a flexible disk or other recording medium.

[0104] The components in the present disclosure may be combined in any manner. The components in the present disclosure may be realized by software. The components in the present disclosure may be realized by circuits.

[0105] Although the present disclosure has been described above with reference to the embodiments, the present disclosure is not limited to the above-described embodiments. Various modifications that can be understood by those skilled in the art can be made to the configuration and details of the present disclosure within the scope of the present disclosure. Furthermore, each embodiment can be combined with other embodiments as appropriate.

[0106] Some or all of the above-described embodiments can be described as, but are not limited to, the following supplementary notes. (Appendix 1) An input line; a variable phase shift circuit connected to the input line and having a line forming layer made of vanadium dioxide; an output line connected to the variable phase shift circuit. (Appendix 2) The variable phase shift circuit comprises: a plurality of heating elements arranged in an array along one surface of the line formation layer; a heat generating drive circuit arranged in association with each of the plurality of heat generating elements; Each of the plurality of heating elements includes: a thermal connection to the line formation layer; Each of the plurality of heat generation drive circuits includes: 2. The phase shifter according to claim 1, wherein the heating element is caused to generate heat up to a temperature exceeding a phase transition temperature of vanadium dioxide contained in the line formation layer in accordance with selection of the heating element. (Appendix 3) 3. The phase shifter according to claim 2, wherein vanadium dioxide contained in the line formation layer in contact with the heated heating element undergoes a phase transition to a metallic phase exceeding a phase transition temperature, thereby forming an extension line in the line formation layer that electrically connects the input line and the output line. (Appendix 4) 4. The phase shifter according to claim 3, wherein the extension line that linearly connects the input line and the output line is formed in the line formation layer. (Appendix 5) 4. The phase shifter according to claim 3, wherein the extension line is formed in a bent shape in the line formation layer. (Appendix 6) 4. The phase shifter according to claim 3, wherein the extension lines having any shape are formed on the line formation layer. (Appendix 7) 4. The phase shifter according to claim 3, wherein the heat generating elements are combined to form heat generating elements of different shapes. (Appendix 8) 4. The phase shifter according to claim 3, wherein any one of the plurality of heat generating elements included in the line forming layer is arranged so that the extension line forms an arc. (Appendix 9) a heat generating drive circuit for causing the heat generating element used to form the extension line corresponding to the conductor pattern according to a desired phase shift amount to generate heat is selected using a phase shift table in which conductor patterns according to a phase shift amount are registered; 4. The phase shifter according to claim 3, wherein the line formation layer is formed with the extension line corresponding to the conductor pattern set using the phase shift table. (Appendix 10) A phase shifter according to any one of Supplementary Notes 1 to 9; an antenna array in which a plurality of patch antennas are arranged in a two-dimensional array, The phase shifter an antenna device arranged in association with each of the plurality of patch antennas; [Explanation of symbols]

[0107] 1, 2 Antenna device 10, 21 Phase shifter 11 Input line 13 Variable phase shift circuit 15 Output line 20 Antenna Array 22 Matrix Circuit 27 Drive circuit 17, 28 Control circuit 29 Signal source 120, 220 board 131 Heat generation drive circuit 132 Heating element 133 Track formation layer 140, 141, 142 insulating layer 200 Planar Antenna 241 First insulating layer 242 Second insulating layer 243 Third insulating layer 244 Fourth insulating layer 251 1st ground layer 252 2nd ground layer 253 3rd ground layer 254 4th ground layer 255 via 271 First drive circuit 272 Second drive circuit

Claims

1. An input line; a variable phase shift circuit connected to the input line and having a line forming layer made of vanadium dioxide; an output line connected to the variable phase shift circuit, The variable phase shift circuit comprises: a plurality of heating elements arranged in an array along one surface of the line formation layer; a heat generating drive circuit arranged in association with each of the plurality of heat generating elements; Each of the plurality of heating elements includes: A phase shifter thermally connected to the line formation layer.

2. Each of the plurality of heat generation drive circuits includes:

2. The phase shifter according to claim 1, wherein the heating element is caused to generate heat up to a temperature exceeding a phase transition temperature of vanadium dioxide contained in the line formation layer in accordance with the selection of the heating element.

3. 3. The phase shifter according to claim 2, wherein vanadium dioxide contained in the line formation layer in contact with the heated heating element undergoes a phase transition to a metallic phase exceeding a phase transition temperature, thereby forming an extension line in the line formation layer that electrically connects the input line and the output line.

4. 4. The phase shifter according to claim 3, wherein the extension line that linearly connects the input line and the output line is formed in the line formation layer.

5. 4. The phase shifter according to claim 3, wherein the extension lines are formed in a bent shape in the line formation layer.

6. 4. The phase shifter according to claim 3, wherein the extension lines having any shape are formed on the line-forming layer.

7. 4. The phase shifter according to claim 3, wherein the heat generating elements are configured in combination with each other and have different shapes.

8. 4. The phase shifter according to claim 3, wherein any one of the plurality of heat generating elements included in the line forming layer is arranged so that the extension line forms an arc.

9. a heat generating drive circuit for causing the heat generating element used to form the extension line corresponding to the conductor pattern according to a desired phase shift amount to generate heat is selected using a phase shift table in which conductor patterns according to a phase shift amount are registered; 4. The phase shifter according to claim 3, wherein the extension lines are formed in the line formation layer in accordance with the conductor pattern set using the phase shift table.

10. A phase shifter according to any one of claims 1 to 9; an antenna array in which a plurality of patch antennas are arranged in a two-dimensional array, The phase shifter an antenna device arranged in association with each of the plurality of patch antennas;

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