Semiconductor element testing device and semiconductor element testing method

Abstract

To solve problems in which, for the test of a transistor, thick wiring corresponding to test items is hard, and connection change requires long times, and also a problem of enlargement of a testing device due to a workspace required for the connection change.SOLUTION: A semiconductor module 117 to be tested is arranged on left side from the center of a testing device 210. A connection metal fitting 386a is connected to an element terminal 226a of the semiconductor module 117. The connection metal fitting 386a and a fork plug 205e are connected to each other via power supply (connection) wiring 211b. A flexible conductor 381 is connected to an element terminal 226c of the semiconductor module 117, and a fork plug 205g is connected thereto via the power supply (connection) wiring 211b. An opening 216 is arranged at right side from the center of the testing device 210. A switching circuit substrate 201 on which a conductor plate 204 is mounted is arranged on a lower location of the fork plug 205, and the fork plug 205 and the conductor plate 204 are fitted and connected.SELECTED DRAWING: Figure 11

Description

[Technical Field]

[0001] The present invention relates to a semiconductor element (electrical element) testing apparatus, power cycle testing apparatus, semiconductor element (electrical element) testing method, semiconductor element (electrical element) evaluation apparatus or method, power cycle testing method, etc., that perform cycle testing of semiconductor elements such as SiC, GaO, Ga2O3, GaN, etc., semiconductor elements such as IGBTs, MOS-FETs, GaN-FETs, bipolar transistors, thyristors, diodes, triacs, posistors, thermistors, resistors, coils, quartz elements, capacitors, etc. The present invention can be applied to a wide variety of electrical elements, as shown in Figure 37. The present invention also relates to a method and attachment apparatus for making electrical connections to terminals, etc. of semiconductor elements when testing semiconductor elements, etc.

[0002] The present invention provides a semiconductor element (electrical element) testing device and a semiconductor element (electrical element) testing and evaluation method that can efficiently reproduce stresses similar to failure modes in the actual use environment and actual use state of semiconductor elements, and can evaluate and test power semiconductor elements and the like with high accuracy.

[0003] The present invention provides a test device that allows test circuits to be easily changed in accordance with test conditions, shortening the operation time, and also provides a space-saving test device. [Background technology]

[0004] The lifespan of a power semiconductor element can be attributed to thermal fatigue caused by heat generation in the power semiconductor element itself, thermal fatigue caused by temperature changes in the external environment of the power semiconductor element, and voltage fatigue caused by the voltage applied to the gate insulating film of the power semiconductor element.

[0005] Generally, life tests for power semiconductor devices are conducted by repeatedly turning current on and off. The test is carried out by applying voltage to the emitter terminal (source terminal), collector terminal (drain terminal), etc. of the power semiconductor device, passing a test current, and applying a periodic on / off signal (operation / non-operation signal) to the gate terminal.

[0006] The current applied to semiconductor elements during testing is large, at several hundred amperes. This requires low-resistance connection wiring to avoid heat generation and voltage drop. There are also many types and methods of testing, and the connection wiring must be changed to accommodate the type and method of testing. With conventional testing equipment, changing the connection wiring required a long time. Also, changing the test circuit connections required work space.

[0007] Semiconductor elements (electrical elements) need to be tested according to their operating environment (temperature, humidity). However, it is not easy to create the operating environment (temperature, humidity) in a short time, and it is also difficult to position the semiconductor elements (electrical elements) appropriately in the operating environment (temperature, humidity). [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Patent Publication No. 2017-17822 Summary of the Invention [Problem to be solved by the invention]

[0009] In power cycle tests of semiconductor elements such as transistors, a large constant current of several hundred amperes or more must be applied to the semiconductor elements. This requires the use of thick, low-resistance wires for the connection wiring, but thick connection wiring is hard and inflexible, making test preparation difficult. Changing the wiring connections and setting them up to correspond to the test items takes a long time. Another issue is that the test equipment becomes large because work space is required for the connection change work. Furthermore, in the power cycle test, there is a problem in that it is difficult to manage the settings of the semiconductor element so that it is suited to the environment in which it is used. [Means for solving the problem]

[0010] A semiconductor module (electrical module, semiconductor element, electrical element, semiconductor component, electrical component, power element, transistor, transistor module, power module, power transistor, composite element, etc.) 117 to be tested is arranged to the left of the center of the test device 210. A connecting fitting 386a is connected to an element terminal 226a of the semiconductor module 117, and the connecting fitting 386a and a fork plug 205e are connected by a power supply (connection) wiring 211b.

[0011] A flexible conductor 381 is connected to the element terminal 226c of the semiconductor module 117, and a fork plug 205g is connected to it by a power supply (connection) wiring 211b. The opening 216 is located to the right of the center of the test device 210. A switch circuit board 201 on which a conductor plate 204 is mounted is located below the fork plug 205, and the fork plug 205 and the conductor plate 204 are fitted together and connected. [Effects of the Invention]

[0012] Power supply (connection) wiring 211 connected to the element terminals of semiconductor module 117 is drawn out in one direction, and a fork plug 205 is connected to one end of power supply (connection) wiring 211. A plurality of switch circuit boards 201 are arranged in the lower chamber of the test device, and the test circuit can be changed by fitting the fork plug 205 with the conductor plate 204 mounted on a selected switch circuit board. This makes it easy to change connections, and reduces the work space required for changing connections, allowing the test device 210 to be made more compact. [Brief explanation of the drawings]

[0013] [Figure 1] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 2]1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 3] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 4] 1A and 1B are diagrams illustrating the configuration of a connecting member according to the present invention; [Figure 5] 1A and 1B are an equivalent circuit diagram and a configuration diagram of a semiconductor element (module). [Figure 6] 1A and 1B are an equivalent circuit diagram and a configuration diagram of a semiconductor element (module). [Figure 7] 1A and 1B are an equivalent circuit diagram and a configuration diagram of a semiconductor element (module). [Figure 8] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 9] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 10] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 11] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 12] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 13] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 14] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 15] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 16] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 17] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 18] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 19] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 20] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 21] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 22] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 23] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 24] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 25] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 26] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 27] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 28] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 29] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 30] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 31] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 32] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 33] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 34] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 35] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 36] 1 is a configuration diagram and an explanatory diagram of a semiconductor device testing device according to the present invention; [Figure 37] 1A and 1B are diagrams illustrating the configuration of a semiconductor element; [Figure 38] 1 is an explanatory diagram of a semiconductor device testing method according to the present invention; [Figure 39] 1 is an explanatory diagram of a semiconductor device testing method according to the present invention; [Figure 40]1 is an explanatory diagram of a semiconductor device testing method according to the present invention; [Figure 41] 1 is an explanatory diagram of a semiconductor device testing method according to the present invention; [Figure 42] 1 is an explanatory diagram of a semiconductor device testing method according to the present invention; [Figure 43] 1 is an explanatory diagram of a semiconductor device testing method according to the present invention; [Figure 44] 1 is an explanatory diagram of a semiconductor device testing method according to the present invention; [Figure 45] 1 is an explanatory diagram of a semiconductor device testing method according to the present invention; [Figure 46] 1 is an explanatory diagram of a semiconductor device testing method according to the present invention; [Figure 47] 1 is an explanatory diagram of a semiconductor device testing method according to the present invention; DETAILED DESCRIPTION OF THE INVENTION

[0014] Hereinafter, a test (evaluation) device and a test (evaluation) method for semiconductor elements (electric elements) according to embodiments of the present invention will be described with reference to the drawings.

[0015] In each drawing for explaining the embodiment of the invention, elements having the same function or similarity are given the same reference numerals. Items not necessary for the explanation are omitted from the drawings. Also, the drawings may be simplified or schematic to facilitate the explanation. Also, items and parts not necessary for the explanation may be omitted. Also, descriptions of parts similar or identical to other embodiments may be omitted.

[0016] In this specification and drawings, parts, portions, descriptions, and illustrations that are not necessary for the explanation may be omitted. Furthermore, each embodiment may be combined in whole or in part. Furthermore, the embodiments of the present invention may be combined with each other, or may be partially modified and implemented.

[0017] The present invention relates to testing of semiconductor elements (electrical elements), and in particular to test equipment, testing methods, evaluation methods, inspection methods, etc. for semiconductor elements such as SiC, GaO, Ga2O3, GaN, etc., semiconductor elements such as IGBT, MOS-FET, GaN-FET, bipolar transistor, thyristor, diode, etc., and electrical elements such as capacitors and resistors. In the embodiments described in the specification, IGBTs are mainly used as examples of semiconductor elements (electrical elements), but the present invention is not limited to this.

[0018] The present invention is not limited to IGBTs, but can be applied to various semiconductor elements such as SiC transistors, MOSFETs, JFETs, thyristors, diodes, thermistors, and posistors.

[0019] In the embodiments of the present invention, the control terminal that turns the transistor on or off will be described as the gate terminal (G), but it goes without saying that the gate terminal (G) may also be interpreted as the base terminal (B). The gate terminal (G) and base terminal (B) are terminals to which a signal voltage Vgs that turns the transistor 117 on or off is applied. It goes without saying that the collector terminal (C) and emitter terminal (E) may also be interpreted as the source terminal (S), drain terminal (D), etc.

[0020] The following description will be given assuming that the emitter terminal e of the transistor 117 is grounded. The gate terminal g of the transistor 117 is connected to the gate driver circuit 113.

[0021] Conventional power cycle testing equipment requires the wiring between semiconductor elements and test circuits to be changed using bolts, etc. Furthermore, when replacing semiconductor elements, it is necessary to fix the semiconductor elements and reconnect them to the test circuit each time.

[0022] In the present invention, semiconductor element 117 is placed to the left of the center of test equipment 210. Connection fitting 386a is connected to element terminal 226a of semiconductor element 117, and connection fitting 386a is connected to fork plug (connector, connection plug, insulating member, etc.) 205e by power supply (connection) wiring 211b. Flexible conductor 381 is connected to element terminal 226c of semiconductor element 117, and fork plug 205g is connected by power supply (connection) wiring 211b.

[0023] Opening 216 is located to the right of the center of test equipment 210. A switch circuit board 201, on which a conductor plate 204 is mounted or placed, is located below fork plug 205. Fork plug 205 and conductor plate 204 are fitted together and connected to form a test circuit.

[0024] It should be noted that the switch circuit board 201 is not limited to having only the switch circuit 124 mounted thereon. It goes without saying that a device control circuit, a control measurement circuit 133, a controller circuit 111, etc. may also be configured or disposed thereon.

[0025] The gate driver circuit 113 can be set to a constant voltage or a voltage that varies over time. The gate driver circuit 113 is also configured to be able to set (output) a voltage that varies periodically over time. As shown in FIGS. 39 to 41, it is effective to set the resistance of resistor R when voltage V2 is applied to gate terminal g to a different value from the resistance of resistor R when voltage V1 is applied to gate terminal g. The resistance R can be set to a value that determines the resistance between the channels of transistor 117, allowing a constant current Ic to be supplied and the inter-channel voltage Vi to be measured to be stabilized.

[0026] A resistor R (not shown) may be disposed between the gate terminal g and the emitter terminal e or the collector terminal c of the transistor 117. By adjusting the value of the resistor R, the slope angle of the voltage waveform at the rising and falling edges of the gate signal can be adjusted or set. In addition, the occurrence of inrush current and surge voltage can be suppressed. In addition, by varying the resistance value, inrush current and surge voltage can be intentionally generated.

[0027] The gate driver circuit 113 can set the slope of the rising waveform (rise time Tr) and the slope of the falling waveform (fall time Td) of the gate signal voltage Vg applied to the gate terminal g of the transistor 117. By separately adjusting the rise time Tr and the fall time Td, the on-time and on-characteristics of the transistor 117 are controlled to predetermined values.

[0028] As described above, the semiconductor element (electrical element) testing device and testing method of the present invention can control, adjust, or set the resistance value R of the variable resistance circuit 125 connected to the gate terminal of the transistor 117 or the rise time / fall time of the gate driver circuit 113.

[0029] In this embodiment, the semiconductor element (electrical element) 117 may be a single element as shown in Fig. 6, or may be a semiconductor element (electrical element) module in which a plurality of semiconductor elements (electrical elements) are combined as shown in Fig. 5 and Fig. 7. Note that even if the semiconductor element (electrical element) 117 has a configuration in which a heat sink is attached, a configuration in which a heat pipe is attached, or the like, it is included in the concept of the semiconductor element (electrical element) 117.

[0030] In the examples of the present invention, the base terminal (B) will also be referred to as the gate terminal (G). A terminal that controls the on / off of a transistor will be described as a gate terminal, and a circuit connected to the gate terminal, base terminal, etc. will be described as a gate drive circuit, etc.

[0031] In the present invention, an N-channel power transistor is used as an example of the semiconductor element component 117, but the present invention is not limited to this. Furthermore, the present invention is not limited to a power transistor, and may be a small-signal transistor. Furthermore, the present invention is not limited to an N-channel transistor, and it goes without saying that the present invention can be applied to a P-channel transistor as well. Furthermore, the present invention can also be applied to a semiconductor element 117 or semiconductor module 117 that combines P-channel and N-channel transistors.

[0032] The semiconductor element (electric element) 117 targeted by the semiconductor element (electric element) testing device and semiconductor element (electric element) 117 testing method of the present invention can be applied to many elements, as shown in FIG. 37 as an example.

[0033] As shown in Figures 37(a) to 37(f), the transistors may be either MOS type or bipolar type. Furthermore, the transistors may be N-channel or P-channel. It goes without saying that the testing device and testing method of the present invention can be applied to semiconductor elements such as diodes (Figure 37(g)), thyristors (Figure 37(h)), and triacs (Figure 37(i)), as well as electrical components such as resistors (Figure 37(j)), capacitors, coils, relays, and crystal oscillators (Figure 37(k)).

[0034] The present invention is not limited to semiconductor elements, and it goes without saying that the present invention can also be applied to electrical elements other than semiconductors, such as resistor elements, capacitors, coils, crystal elements, thermistors, posistors, and ZNR.

[0035] The semiconductor device (electrical device) testing device of the present invention is not limited to testing single devices such as semiconductor devices, electrical devices, etc. For example, it goes without saying that it can inspect or test semiconductor devices and electrical devices that are configured as modules of multiple devices, as shown in Figures 5 and 7.

[0036] The transistor 117 may have a built-in diode 119 for temperature measurement (evaluation), or a temperature sensor 316 may be disposed or formed outside the transistor 117. Examples of the temperature sensor 316 include those using a semiconductor element such as a thermistor, and those using a thermocouple.

[0037] The diode 119 may be a diode formed as a parasitic capacitance of the transistor 117, or may be a diode formed as a temperature sensor. The embodiment of FIG. 1 is an embodiment in which the diode 119 is formed or placed between the emitter terminal and the collector terminal of the transistor 117. FIG. 20 is an embodiment in which the diodes 119 (diode 119a, diode 119b) are placed or formed independently of the transistor 117.

[0038] The semiconductor elements (electrical elements) tested (evaluated) by the semiconductor element (electrical element) test (evaluation) device of the present invention are often modularized rather than individual elements. It goes without saying that the semiconductor element (electrical element) test (evaluation) device is not limited to individual elements, but may also be modularized.

[0039] For ease of explanation or understanding, the following description will be given taking as an example a semiconductor module 117 as shown in FIGS. 5, 6 and 7 as an embodiment.

[0040] 5A and 5B are an equivalent circuit diagram and an explanatory diagram schematically illustrating the module of the transistor module 117. For example, as illustrated in Fig. 5A, a transistor 117s and a transistor 117b are connected to each other to form a module.

[0041] In Figure 5, a temperature measurement diode (Dis) 119s is connected to or formed between the collector terminal (Cm) and intermediate terminal (CE) of transistor 117s. A temperature measurement diode (Dim) 119m is connected to or formed between the intermediate terminal (CE) and emitter terminal (E) of transistor 117m. The C terminal is element terminal 226a, the CE terminal is element terminal 226c, and the E terminal is element terminal 226b. Element terminals 226 are formed or arranged as shown in Figure 5(b).

[0042] The transistor 117s is Q1 (upper arm), and the transistor 117m is Q2 (lower arm). A temperature sensor 316 that measures the temperature of the module is arranged or attached to the semiconductor module 117. The temperature of the transistor 117 is obtained by passing a current Ic through the diode 119 or from temperature information from the temperature sensor 316.

[0043] The controller circuit 111 has the function of measuring or acquiring the temperature of the element terminal 226 from a thermocouple or temperature sensor 316 attached to the element terminal 226 or in its vicinity, and controlling the test to stop or suspend or issue an alarm if the temperature exceeds a predetermined level.

[0044] The collector terminal c1 of the transistor 117s is arranged as a signal terminal 225c1, the base terminal (gate terminal) g1 of the transistor 117s is arranged as a signal terminal 225g1, and the emitter terminal e1 of the transistor 117s is arranged as a signal terminal 225e1.

[0045] The collector terminal c2 of the transistor 117m is arranged as a signal terminal 225c2, the base terminal (gate terminal) g2 of the transistor 117m is arranged as a signal terminal 225g2, and the emitter e2 of the transistor 117m is arranged as a signal terminal 225e2.

[0046] The voltage between the collector terminal c and the emitter terminal e is the Vce voltage (channel-to-channel voltage), and by measuring the Vce voltage, changes in the characteristics of the transistor 117 can be observed and evaluated.

[0047] In a power cycle test (semiconductor device test) in which a test current Id is supplied to the transistor 117, the supply of the test current Id causes the transistor 117 to deteriorate or change.

[0048] In tests, the parts of the transistor 117 that deteriorate are often the junctions within the transistor 117. The semiconductor layer itself rarely deteriorates, but the junctions (bonding, die bonding, etc.) of the transistor 117 deteriorate, causing the resistance value of the junctions to increase. As the resistance value increases, in the case of an IGBT, the collector-emitter (channel-to-channel voltage) Vce increases, generating heat and raising the temperature of the transistor 117.

[0049] When the semiconductor layer deteriorates, it is often the deterioration of the gate oxide film (insulating film) of transistor 117. When the gate oxide film deteriorates, the oxide film (insulating film) is short-circuited, and the voltage Vce drops. Alternatively, transistor 117 is turned off, no current flows through transistor 117, and the voltage Vce rises to the maximum value of the power supply voltage.

[0050] When the test current Id is applied to the transistor 117, the transistor 117 heats up, and as the heat is generated, the temperature information Tj changes (the Vce voltage (channel-to-channel voltage) changes) due to the heat generated by the channel, etc. Furthermore, when the test current Id is stopped, the temperature of the channel, etc. rises due to heat dissipation, and the temperature information Tj changes. The temperature information Tj is basically equivalent to or similar to the channel-to-channel voltage.

[0051] A test current Id is supplied to the transistor 117, and as the transistor deteriorates, heat generation increases. The heat generation is indicated by temperature information Tj or correlates with the temperature of the semiconductor element. The temperature information Tj correlates with (is dependent on) the channel voltage of the transistor.

[0052] The heat generation or temperature of the transistor 117 can be determined and measured by the voltage between the terminals of a diode 119 formed or placed near the transistor 117. A constant current Ic is passed through the diode 119, and temperature information Tj can be obtained from the diode terminal voltage when the constant current Ic is passed.

[0053] When stress is applied to the transistor 117 by a test, the Vce voltage of the transistor 117 changes, and the temperature information Tj normally changes in the direction of increasing. The temperature information Tj is, for example, the channel-to-channel voltage Vce of the transistor 117. In the semiconductor device (electrical device) testing method of the present invention, the test is stopped under any of the following conditions. When the temperature information Tj is outside the specified range. When the channel voltage Vce is outside the specified voltage range. - If the thermal resistance is outside the specified range.

[0054] Deterioration of the transistor 117 is measured by supplying a test current Id to the transistor 117, and then supplying a constant current Ic to the diode 119 around the time the test current Id is stopped, and measuring the voltage Vi across the diode.

[0055] A constant current circuit (current output circuit, current supply circuit, current generating element, etc.) 118 passes a predetermined constant current Ic. The constant current Ic is applied to a diode 119. When the temperature of the transistor 117 changes, the terminal voltage of the diode 119 changes. By monitoring the terminal voltage Vi of the diode 119, the temperature change of the transistor 117 can be measured or observed. The temperature change is called temperature information Tj. Therefore, the temperature information Tj is the voltage between the terminals (between the collector and emitter terminals of the transistor 117, and between the source and drain terminals of the transistor 117).

[0056] A constant current circuit 118 generates a predetermined constant current Ic. The constant current Ic is applied to a diode 119 or a transistor 117. When the temperature of the transistor 117 changes, the terminal voltage of the diode 119 or the voltage between the channel terminals of the transistor changes. By monitoring or measuring the terminal voltage Vi of the diode 119 or the like, the temperature change of the transistor 117 can be measured or observed.

[0057] A test current Id may be supplied to the transistor 117, and while the test current Id is being supplied, the channel-to-channel voltage Vce of the transistor 117 may be measured. The channel-to-channel voltage Vce of the transistor 117 changes in voltage value due to deterioration or heat generation temperature of the transistor 117. The changing voltage Vi is measured, and temperature coefficient K and the like are integrated, added, or subtracted to obtain temperature information Tj.

[0058] The diode 119 may be a diode 119 of another semiconductor chip mounted on the semiconductor chip on which the transistor 117 is formed. The diode 119 may utilize a parasitic diode that is formed secondarily when the transistor 117 is formed.

[0059] The temperature information Tj may be provided or implemented in a transistor 117 or the like and information from the temperature measurement circuit 115 may be used. Alternatively, the temperature measurement circuit 115 may be configured using a thermocouple, a thermistor, a posistor, or the like as the temperature sensor 316.

[0060] In order to prevent the transistor 117 from generating heat due to the constant current Ic, the constant current Ic is set to a current value that is sufficiently smaller than the test current Id that is passed through the channel of the transistor 117 .

[0061] Specifically, the constant current Ic is set to 1 / 1000 or less of the current Id that is passed through the transistor 117 during testing. Preferably, the current Ic that is passed through the transistor 117 is set to 1×10 of the test current Id. 6 1 or more of 1 x 10 4 The constant current Ic should be between 0.1mA and 100mA.

[0062] The test current Id is changed, and the voltages of the diode 119 and the like (the collector-emitter terminal voltage of the transistor 117, and the cathode-anode voltage of the diode) are measured to determine the temperature coefficient K. The determined temperature coefficient K is stored in the temperature measurement circuit 115 or the controller circuit 111.

[0063] For example, the temperature information Tj is the voltage between the anode and cathode terminals of the diode 119 or the voltage between the collector and emitter terminals of the transistor 117 in FIG.

[0064] The diode 119 may be a diode of another semiconductor chip mounted on the semiconductor chip on which the transistor 117 is formed. The diode 119 may utilize a parasitic diode that is formed secondarily when the transistor 117 is formed.

[0065] The temperature and temperature changes of the transistor 117 can be realized by measuring or observing the voltage between the collector terminal c and the emitter terminal e. The voltage between the collector terminal and the emitter terminal is the voltage Vce between the terminals of the transistor, and also the voltage between the terminals of the diode 119 when a constant current Ic is applied to the diode 119. When applying the constant current Ic to the diode 119, an off voltage is applied to the gate terminal g of the transistor 117 so that no current flows through the transistor 117, and the constant current Ic is applied to the diode 119, and the voltage between the terminals of the diode 119 (cathode-anode voltage) is measured.

[0066] When measuring the channel-to-channel voltage Vce by passing a constant current Ic through the transistor 117, an on-voltage is applied to the gate terminal g of the transistor 117, the constant current Ic is passed from the collector to the emitter (forward direction), and the channel-to-channel voltage of the transistor 117 is measured. It goes without saying that it is also possible to measure the channel-to-channel voltage of the transistor 117 and observe any changes while passing a test current Id through the transistor 117 without using the constant current Ic.

[0067] Signal terminals 225c1, 225g1, and 225e1 are attached to and drawn out from signal connection portion 227a. Signal terminals 225c2, 225g2, and 225e2 are attached to and drawn out from signal connection portion 227b. Insulating fixtures 387 are disposed on the four sides of semiconductor module 117, and semiconductor module 117 is fixed by fixtures 387.

[0068] 8 and 9, a temperature adjustment jacket 134 is disposed on the bottom side of the semiconductor module 117. The temperature adjustment jacket 134 functions as a temperature setter and a temperature regulator. The temperature adjustment jacket 134 is a temperature adjustment device.

[0069] FIG. 8 is a structural diagram and explanatory diagram mainly of the temperature control jacket 134 portion. FIG. 8(a) is a structural diagram of the connection portion that connects to the temperature control jacket 134. FIG. 8(a1) is a side view of the connection portion, and FIG. 8(a2) is a structural diagram seen from the back side of the connection portion. FIG. 8(b) is a structural diagram seen from the back side of the temperature control jacket 134. FIG. 8(c) is a cross-sectional (schematic) diagram taken along line AA' in FIG. 8(b).

[0070] As shown schematically in Fig. 8(c), heat dissipation fins 373 are formed or arranged on the back surface of the semiconductor module 117. As shown in Fig. 8(c), the heat dissipation fins 373 of the semiconductor module 117 are inserted into recesses in the temperature adjustment jacket 134, and the semiconductor module 117 and the temperature adjustment jacket 134 are tightly sealed together. Liquid is filled into the b portion from the a1 portion, and the liquid moves along the arrows to dissipate heat from the heat dissipation fins 373.

[0071] The temperature adjustment jacket 134 is made of metal, but an insulating rubber (sheet) 376 is placed between the semiconductor module 117 and the temperature adjustment jacket 134 to insulate it from the semiconductor module 117. Note that the insulating rubber (sheet) 376 is not limited to a rubber material. Any material, shape, or configuration may be used as long as it can seal the space between the semiconductor module 117 and the temperature adjustment jacket 134, is insulating, and prevents liquid from leaking. Furthermore, it goes without saying that the insulating rubber (sheet) 376 or the like is not necessary if the temperature adjustment jacket 134 and the semiconductor module 117 are tightly attached to each other and a mechanism is in place to prevent leakage of refrigerant or the like.

[0072] It goes without saying that if the temperature of the semiconductor module 117 can be adjusted or set by blowing air (heated air, cooled air) onto the rear surface of the semiconductor module 117, the temperature adjustment jacket 134 is not necessary.

[0073] The connector 371 has a hole formed in the center (central part). A refrigerant such as cooling water flows in and out through this hole. Connectors 375 (connection parts 375a and 375b) formed on the temperature control jacket 134 are inserted into the connector 371. The insertion parts are shown as a1 and a2. The connectors 375 are processed so that they can be inserted in close contact with the temperature control jacket 134.

[0074] Figure 9 is a configuration diagram and explanatory diagram of the temperature control jacket 134 and the connection part 375 combined together. Figure 9(b) is a schematic diagram of the temperature control jacket 134 and the like viewed from the bottom. Figure 9(a) is a cross-sectional view (schematic diagram) taken along line BB' in Figure 9(b). However, the diagram is drawn in a schematic manner to facilitate understanding.

[0075] 8 and other figures, the description is given assuming that cooling is performed by the heat dissipation fins 373, but there are also cases in which the semiconductor module 117 is heated during testing. In this case, the refrigerant is heated, and the refrigerant heats the semiconductor module 117 via the heat dissipation fins 373. Therefore, the heat dissipation fins 373 function as heating fins 373.

[0076] Connector 371a is inserted into portion a1 of temperature adjustment jacket 134, and connector 371b is inserted into portion a2 of temperature adjustment jacket 134. Temperature adjustment jacket 134 and connector 371 are attached as a unit to mounting base 372. Using fixing device 387, semiconductor module 117 and temperature adjustment jacket 134 are fixed as a unit to mounting base 372. As shown in FIG. 9(a), connector 371 is connected to connecting pipe 374 via connecting pipe 374.

[0077] As shown in Figures 2, 3, etc., a temperature adjustment jacket (heating / cooling plate) 134 is disposed below the semiconductor element 117. A circulating water pipe 135 is incorporated into the temperature adjustment jacket (heating / cooling plate) 134. A refrigerant (cooling water, etc.) is circulated through the circulating water pipe 135. The temperature adjustment jacket (heating / cooling plate) 134 may also be configured so that it can be cooled or heated by an electric device such as a Peltier element.

[0078] The temperature adjustment jacket (heating / cooling plate) 134 is not limited to a plate shape or a container shape. For example, it may have a shape or configuration in which the semiconductor element 117 can be inserted into the center. The temperature adjustment jacket (heating / cooling plate) 134 may have any configuration as long as it functions as a temperature regulator or temperature setter that has at least one of heating and cooling functions.

[0079] Condensation occurs when cooling is performed using a temperature adjustment jacket (heating / cooling plate) 134, etc. Therefore, it is preferable to inject dry air 306 into the space in which the semiconductor device (electrical device) to be tested is placed, and then perform a test such as a power cycle test.

[0080] The temperature adjustment jacket 134 may be a structure or device in which the transistor 117 is inserted into or clamped in a temperature setting device. It is preferable that the temperature adjustment jacket (heating / cooling plate) 134 is provided with a pipe 135 for circulating cooling water or the like.

[0081] The temperature control jacket (heating / cooling plate) 134 may be configured with an oven, mantle heater, hot plate, electric furnace, or heater for heating. It may also be configured with a heat pump or nitrogen cooler for cooling. A test sample such as a transistor 117 may be sandwiched between multiple heating / cooling plates (temperature control jackets). Alternatively, the test sample 117 may be inserted into and fixed in a heating / cooling device (temperature control jacket).

[0082] The temperature control jacket (heating / cooling plate) 134 includes equipment for maintaining a constant temperature and dehumidifying. For example, it includes a constant temperature water bath, a circulating constant temperature water bath, an incubator, and a dehumidifier. It also includes equipment for humidifying. The heater heating control system performs PID control calculations for one control point so that the target temperature (SV) and the measured temperature (PV) match, and controls the heater power supply.

[0083] When testing and evaluating semiconductor devices, it is often necessary to simultaneously control the heater and cooling mechanism. In the heating and cooling control of this invention, a single regulator operates and controls two systems of output: heating output and cooling output.

[0084] The temperature coefficient K is determined by setting the transistor 117 to a predetermined temperature using the temperature adjustment jacket 134 or the like, passing a constant current Ic through the diode 119, and measuring the collector terminal and emitter terminal voltages. By varying the predetermined temperature and measuring the terminal voltage of the diode 119, the terminal voltage Vi of the diode 119 relative to the temperature of the transistor 117 can be obtained. Therefore, the temperature coefficient K of the transistor 117 can be determined from the terminal voltage Vi of the diode 119 relative to the temperature.

[0085] The constant current Ic flows through the diode 119 when the channel current Id is not flowing. In other words, when the transistor 117 is not turned on (the transistor 117 is turned off), the constant current Ic is passed and the inter-terminal voltage Vi of the diode 119 is measured. The operational amplifier circuit (buffer circuit) 116 outputs the terminal voltage Vi of the diode 119 (terminal c - terminal e).

[0086] The operational amplifier circuit 116 is not limited to one configured from an operational amplifier element, but may be any circuit that makes the output impedance lower than the input impedance.

[0087] The temperature measurement circuit 115 determines the temperature or temperature information Tj of the transistor 117 being tested from the temperature coefficient K stored in the memory and the measured voltage Vi. Alternatively, the temperature output by the temperature measurement circuit 115 is set as the temperature information Tj.

[0088] The obtained temperature information Tj is sent to a controller circuit (controller) 111. When the temperature or the temperature information Tj becomes equal to or exceeds a predetermined set value, the controller circuit (controller) 111 determines that the transistor 117 is in a predetermined stress state or a deteriorated state, and changes the control of the test or stops the test.

[0089] In the semiconductor testing method of the present invention, external conditions are changed in response to deterioration or characteristic changes of transistor 117. For example, if transistor 117 generates heat, the temperature of temperature-regulating jacket 134 is lowered or the current flowing through transistor 117 is reduced. This prevents deterioration and characteristic changes of transistor 117, thereby extending the life of transistor 117. Therefore, the life and reliability characteristics of transistor 117 under specified set conditions can be quantitatively measured and determined. The above control is preferably performed based on voltage Vi.

[0090] Any device with a small resistance (on-resistance) when closed (on) can be used as the switch circuit 124. Examples include a transistor, a mechanical relay, a phototransistor, a photodiode switch, and a photoMOS relay. It is particularly preferable to use a power MOSFET for the switch circuit 124, since the voltage (Vsd) across the channel of the MOSFET is small.

[0091] When the switch circuit 124b is turned on (closed), the power supply (connection) wiring of the power supply device (power supply circuit, voltage generating circuit, current generating circuit) 132 is short-circuited, and a short-circuit current Im flows. By turning on the switch circuit 124b, the electric charge can be discharged. In addition, the emitter terminal and collector terminal of the transistor 117m are short-circuited, and the accumulated electric charge can be discharged.

[0092] 8(c), the liquid (refrigerant) in the refrigerant (circulating water) pipe 135 flows in from a connection part 375a via a connecting pipe 374. The liquid (refrigerant) absorbs heat from (or gives heat to) the heat dissipation fins 373 at part b, and flows out from a connection part 375b. In addition, a temperature sensor 316t is disposed or formed to measure or detect the temperature of the refrigerant (liquid) in part b.

[0093] If the test of the semiconductor module 117 is started and the temperature sensor 316t does not output a rise in temperature after a predetermined time has elapsed, it is determined that a break in the wiring of the test circuit or a malfunction of the power supply device 132 has occurred, and an alarm is issued or the test is stopped, or the test conditions are changed.

[0094] If the temperature output by the temperature sensor 316t rises above a predetermined temperature, it is determined that the refrigerant circulation device has failed or the semiconductor module 117 has abnormally deteriorated, and an alarm is issued or the test is stopped, or the test conditions are changed.

[0095] The water pressure inside b is measured, observed, or monitored with a water pressure gauge 510. If the pressure of the refrigerant (liquid, circulating water) does not increase above a certain level after the start of the test or during the test, the test is stopped or interrupted, indicating an abnormality in the chiller (cooling water circulator) unit 136, damage to the refrigerant (circulating water) pipe 135, or a malfunction in the electrical system. Alternatively, an alarm is sounded by an alarm 509.

[0096] A connection electrode is disposed on the element terminal 226, and a screw hole is formed in the center of the connection electrode. The power supply (connection) wiring 211 is electrically connected via the screw hole. The signal terminal 225 is connected to the connector 202, and a gate drive signal Vgs is applied to the signal terminal 225g via the signal line 203.

[0097] The semiconductor module 117 in Fig. 5 has two transistors. The present invention is not limited to the configuration in Fig. 5. Fig. 6 is a configuration diagram (explanatory diagram) of the semiconductor module 117 when the semiconductor module 117 has one transistor 117.

[0098] 6A and 6B are an equivalent circuit diagram of a transistor module 117 and an explanatory diagram schematically illustrating the module. As shown in FIG. 6A, the transistor 117 is modularized. A temperature measurement diode 119 is connected to or formed on the collector terminal (C) and emitter terminal (E) of the transistor 117. The C terminal is the element terminal 226a, and the E terminal is the element terminal 226b, and the element terminal 226 is formed or arranged as shown in FIG. 6B. A mounting hole 229 is formed in the element terminal 226.

[0099] A temperature sensor 316 for measuring the temperature of the module is disposed or attached to the semiconductor module 117. The temperature of the transistor 117 is obtained by passing a current Ic through a diode 119 or from temperature data from the temperature sensor 316.

[0100] A signal terminal 225g is arranged at the base terminal (gate terminal) g1 of the transistor 117. A signal terminal 225c is arranged at the collector terminal c1 of the transistor 117. A signal terminal 225e is arranged at the emitter terminal e of the transistor 117. The signal terminals 225c, 225g, and 225e are attached to and drawn out from a signal connection portion 227. A connector 202 is connected to the signal terminal 225. Insulating fixtures 387 are arranged on the four sides of the semiconductor module 117, and the semiconductor module 117 is fixed by the fixtures 387.

[0101] A semiconductor module 117 as one embodiment shown in Fig. 7 is configured by arranging or configuring three sets of semiconductor modules 117 of Fig. 5. The semiconductor module 117 is configured by three semiconductor modules: semiconductor module 117a, semiconductor module 117b, and semiconductor module 117c.

[0102] The semiconductor module 117a has electrodes arranged or formed thereon for the element terminal 226a1, the element terminal 226b1, and the element terminal 226c1, as well as signal connection parts 227a1 and 227a2.

[0103] The semiconductor module 117b has electrodes of an element terminal 226a2, an element terminal 226b2, and an element terminal 226c2 arranged or formed thereon, as well as signal connection parts 227b1 and 227b2 arranged or formed thereon.

[0104] The semiconductor module 117c has electrodes of an element terminal 226a3, an element terminal 226b3, and an element terminal 226c3 arranged or formed thereon, as well as a signal connection portion 227c1 and a signal connection portion 227c2 arranged or formed thereon.

[0105] 4 is a diagram illustrating the configuration of a connection plug (fork plug) 205 used in the test device of the present invention. The connection plug (fork plug) 205 is used to establish an electrical connection with a conductor plate (copper bar) 204, etc.

[0106] In this specification, the drawings, etc., a plug or other member used in a connection portion will be described as a connection plug 205 or a fork plug 205. However, it is not limited to a connection plug 205 or a fork plug 205, and any member of any shape, configuration, or structure may be used as long as it is detachable and can be fitted with another conductive member at its tip to achieve electrical connection. For example, a fork connector is an example. It may also be a connection connector, a crimp connector, etc.

[0107] The connecting members such as the fork plug 205 are not limited to being attached to all terminals, etc. For example, it goes without saying that the fork plug 205 may be formed or placed in locations that are constantly or frequently attached and detached, and other locations may be configured with screws, bolts, etc.

[0108] The transistor 117 to be tested is connected to a circuit board having a switch circuit, etc., by inserting a connection plug (fork plug 205) through an opening 216 provided in the partition wall 214 and electrically contacting the connection plug (fork plug 205) with a conductor plate 204 provided on the circuit board.

[0109] The conductor plate (copper bar) 204 is not limited to a plate shape. For example, it may be rod-shaped. It may also be cylindrical, foil-shaped, or a connector-shaped. Also, a thick copper plate may be formed on the switch circuit board 201, and this copper plate may be processed and used as the conductor plate (copper bar) 204.

[0110] In the embodiment of the present invention, it is expressed as if one switch circuit 124 is mounted on each switch circuit board 201, such as by saying that switch circuit 124b is mounted on switch circuit board 201a and switch circuit 124a is mounted on switch circuit board 201b, but this is not limited to this. For example, it goes without saying that a plurality of switch circuits 124 may be mounted or arranged on one switch circuit board 201, such as by mounting or arranging switch circuit 124a and switch circuit 124b on switch circuit board 201a.

[0111] In the embodiment of the present invention, the conductor plate 204 is described as being mounted on the switch circuit board 201, but the conductor plate 204 may be formed integrally with the switch circuit board 201, or the switch circuit board 201 and the conductor plate 204 may be arranged separately. Needless to say, the switch circuit 124 and the separate conductor plate 204 may also be connected by a connecting wire or the like.

[0112] In this embodiment, the conductor plate 204 is referred to as a conductor plate, but the concept of the conductor plate 204 includes other shapes and configurations such as a conductor rod. The conductor plate 204 is formed or configured from a copper member, and preferably has its surface plated with nickel or zinc.

[0113] The test current Id is output after checking whether or not each part is electrically connected, for example, the electrical connection between the fork plug 205 and the conductor plate 204, or the electrical connection between the connector 202 and each terminal of the semiconductor element 117. Whether or not to output the test current Id is also controlled based on the output data of the water pressure gauge 510 and the temperature sensor 316.

[0114] The four plugs 205 may have any configuration, structure, form, style, or method that allows them to be electrically connected to an object such as the conductive plate 204 by press-fitting, pressure welding, insertion, crimping, clamping, sandwiching, fitting, or the like.

[0115] Conductive plate 204 is not limited to a plate shape, and may be cylindrical, rod-shaped, connector-shaped, etc. Fork plug 205 may have any configuration, structure, form, style, or method that allows it to be electrically connected to an object such as conductive plate 204 by fitting, press-fitting, pressure-welding, insertion, crimping, clamping, or the like. Conductive plate 204 is configured so that fork plug 205, etc., can be connected to either the left or right side.

[0116] The conductive plate 204 is, for example, a copper plate with a thickness of 5 mm and a width of 50 mm. The length of the conductive plate 204 is, for example, 350 mm. For ease of explanation, the following description will be given using the conductive plate 204 as an example.

[0117] As shown in Figure 4(a), the conductor plate 204 is fixed to the circuit board 201 with screws 384. The copper foil of the circuit wiring pattern is exposed where the circuit board 201 and the conductor plate 204 come into contact. The surface of the copper foil is also plated with zinc and nickel. The plating improves the electrical contact between the circuit board 201 and the conductor plate 204.

[0118] As shown in Fig. 4(a), the conductor plate 204 has a portion that protrudes from the switch circuit board 201. In other words, the conductor plate 204 is longer than the width of the switch circuit board 201. A fork plug 205 is fitted into this protruding portion. Fig. 4(a) shows an embodiment in which a fork plug 205a is connected to the right end of the conductor plate 204, and a fork plug 205b is connected to the left end of the conductor plate 204. The fork plug 205a and the fork plug 205b are electrically connected via the conductor plate 204. In other words, the conductor plate 204 functions as an electrical wiring path.

[0119] A connection bolt (fitting) 219 is disposed on the fork plug 205, and the power supply (connection) wiring 211 and the fork plug 205 are connected by the connection bolt (fitting) 219.

[0120] It is preferable that temperature sensors (temperature measurement circuits) 316 are arranged or connected in contact with or in close contact with conductive plate 204 and fork plug 205. In the embodiment of FIG. 4, temperature sensors 316a and 316b are arranged near where fork plug 205 makes contact with conductive plate 204.

[0121] If the electrical connection between the fork plug 205 and the conductor plate 204 is poor, the temperature sensor 316 detects heat generated at the connection (contact portion) and transmits information indicating an abnormal temperature to the controller circuit 111. Examples of the sensor portion of the temperature sensor 316 include a thermocouple, a thermistor, a semiconductor sensor, and an IC sensor.

[0122] The present invention is not limited to this. For example, the power supply (connection) wiring 211 may be electrically connected directly to the conductor plate 204 without the fork plug 205. For example, in FIG. 1, the conductor plate 204a is connected using a connection bolt 219a.

[0123] The fork plug 205 will be described as being inserted into a component or structure that separates a space, such as the partition wall 214b. However, this is not limiting. For example, the fork plug 205 may be configured to be inserted into a cylindrical object that supports the fork plug 205, thereby electrically connecting the conductor plate 204 and the like.

[0124] The partition walls 214 and 215 are not limited to a partition wall in shape or configuration. The partition walls have any of the functions of holding the fork plug 205, supporting it, acting as a partition plate, a mounting portion, an insertion portion, etc. For example, a configuration such as a frame that supports the inserted fork plug 205 is exemplified.

[0125] 4(b), electrical connection is achieved by mechanically fitting fork plug 205 and conductive plate 204. When fork plug 205 is inserted into conductive plate 204, U-shaped portion 217 slightly expands or comes into proper contact, resulting in good joint or fitting between fork plug 205 and conductive plate 204.

[0126] Contact resistance may occur at the connection between the fork plug 205 and the conductor plate 204. Contact resistance generates heat at the connection. To improve heat dissipation from the conductor plate 204, heat dissipation fins 373 are attached to the surface of the conductor plate 204, as shown in FIG. 4(a). Alternatively, for example, as shown in FIG. 4(c), the conductor plate 204 and the heat dissipation fins 373 may be integrally formed or configured. It is preferable to apply thermally conductive grease or a heat-dissipating silicone oil compound between the surface of the conductor plate 204 and the heat dissipation fins 373. Similarly, it is preferable to apply thermally conductive grease or a heat-dissipating silicone oil compound to the contact points between the circuit board 201 and the conductor plate 204.

[0127] Preferably, for air cooling, a blower fan 511 is arranged outside the conductive plate 204 and the fork plug 205. A heat pipe may be arranged or attached to the surface or inside of the conductive plate 204.

[0128] The controller circuit 111 detects the speed and stop of the blower fan 511. The rotation speed of the blower fan 511 is acquired, and a stop determination of the fan and a change in air volume are performed.

[0129] The output of the fan control unit (not shown) of the blower fan 511 is connected to a control interface (I / F) (not shown), and the fan control unit application counts pulses and calculates the fan rotation speed. The fan control unit outputs two cycles of square waves per fan rotation, so the fan control unit counts the number of pulses per unit time (1 second) to determine the rotation speed. If the fan stops during the test, an alarm is generated from the alarm 509 if the test is in progress.

[0130] The fan control unit monitors the fan rotation speed during the test, and if the measured rotation speed exceeds the upper or lower limit, it determines that there has been a change in air volume and issues an alarm from alarm 509. The control software (application) monitors this alarm and stops the test. The fan rotation speed at the start of the test is measured and used as the reference value.

[0131] As shown in FIG. 4(b), it goes without saying that a water cooler 377 may be arranged or configured around a connecting member such as the fork plug 205, and cooling water 378 may be filled in the water cooler 377 and circulated to water-cool the connecting member such as the fork plug 205.

[0132] 4(b), a connection bolt 219 is attached to the fork plug 205. A connection wire 211 is connected to or fitted onto the connection bolt 219 or the like.

[0133] Conductive plate 204 and fork plug 205 contact each other at contact portions 220a and 220b formed on fork plug 205. Contact portion 220 is made of phosphor bronze and nickel alloy, and has spring properties. The surface of contact portion 220 is gold-plated or silver-plated. The plating improves the electrical stability of contact portion 220.

[0134] Conductive plate 204 and fork plug 205 contact each other at contact portions 220a and 220b formed on fork plug 205. Contact portion 220 is made of phosphor bronze and nickel alloy, and has spring properties. The surface of contact portion 220 is gold-plated or silver-plated. The plating improves the electrical stability of contact portion 220.

[0135] The conductive plate (copper bar) 204 is not limited to a plate shape. For example, it may be rod-shaped. It may also be cylindrical or foil-shaped. Other examples include shapes such as an arc shape. In this embodiment, it is expressed as a conductive plate 204, but the concept of the conductive plate 204 includes other shapes and configurations such as a conductive rod. The conductive plate 204 is formed or configured from a copper member, and its surface is plated with nickel or silver.

[0136] 2 is a configuration diagram of a power cycle test apparatus (semiconductor element test apparatus) of the present invention. The power cycle test apparatus includes, within a housing 210, a chiller (cooling water circulator) unit (cooling / heating device) 136, a heating / cooling plate (temperature-regulating jacket) 134, a dry air generator 302 that generates dry air 306, and a circulating water pipe 135 that circulates water between the heating / cooling plate (temperature-regulating jacket) 134 and the chiller (cooling water circulator) unit 136. A transistor 117 is mounted on the heating / cooling plate (temperature-regulating jacket) 134 as a semiconductor element to be tested.

[0137] The temperature of the transistor 117 is maintained at a specified or predetermined value by heating or cooling the circulating water in the temperature control jacket 134. The temperature of the transistor etc. is periodically changed according to the test conditions, and the transistor etc. is cooled or heated at a constant temperature.

[0138] The temperature information Tj of the test transistor is measured, and the temperature adjustment jacket 134 is controlled so as to maintain the measured temperature information Tj at a constant value. To prevent condensation on the temperature adjustment jacket 134, dry air is injected into the test chamber or tank.

[0139] The temperature control jacket 134 keeps the temperature of the equipment, etc. constant by circulating the heat medium, etc. while managing the liquid temperature of the water or heat medium. The temperature control jacket 134 is often used mainly for cooling, but it can also heat as well as cool. The temperature control jacket 134 is configured to be able to control various temperatures. FIG. 2 is a diagram illustrating the configuration of a semiconductor device testing device (power cycle testing device) according to the present invention.

[0140] The dry air generator 302 is equipped with a dry air pipe 303a for injecting dry air 306 into a dry air injection (filling) container (chamber, partition, enclosure, etc.) 208, and a dry air pipe 303b for discharging the dry air 306 from the dry air injection (filling) container (chamber) 208.

[0141] The dry air pipe 303 is a pipe for supplying dry air 306 maintained at a predetermined relative humidity or lower. If the dry air 306 directly hits the semiconductor module 117, it may affect the internal temperature of the semiconductor module 117. Furthermore, if the dry air 306 directly hits the thermo-hygrometer 304, it may cause an error in the measurement value. For this reason, it is preferable that the dry air 306 be ejected upward. The ejection direction of the dry air 306 may be any direction other than the direction in which the semiconductor module 117 and the thermo-hygrometer 304 are located.

[0142] Thermo-hygrometer 304 is a sensor that measures the temperature and relative humidity inside dry air injection (filling) container (chamber) 208. Electromagnetic lock (locking device) 307 can lock closed dry air injection (filling) container (chamber) 208 to prevent it from being opened. Drain groove 507, exhaust port 508, leak sensor 512, and alarm 509 are arranged in dry air injection (filling) container (chamber) 208. Drain groove 507 is a mechanism for preventing coolant from leaking into the electrical circuits, etc., at the bottom of the housing.

[0143] The drain groove 507 is formed along the inner circumference of the lower end of the dry air injection (filling) container (chamber) 208. Also, a dry air pipe 303, a thermo-hygrometer 304, and an electromagnetic lock 307 are arranged inside the dry air injection (filling) container (chamber) 208. The electromagnetic lock 307 and an alarm 509 are linked together.

[0144] The liquid leakage sensor 512 is a sensor for detecting leaked coolant, for example, by an inter-electrode resistance detection method. The liquid leakage sensor 512 is disposed inside the dry air injection (filling) container (chamber) 208, and has an amplifier (not shown) and a band-shaped detection band (not shown). The detection band is connected to the amplifier, and one end is connected to a terminator (not shown).

[0145] The control circuit 11 and test circuit 131 control the dry air generator 302, chiller (cooling water circulation device) unit 136, thermo-hygrometer 304, electromagnetic lock 307, and liquid leakage sensor 512. The test circuit 131 also controls the supply of dry air 306 from the dry air pipe 303. An on-off valve (not shown) is attached to the dry air pipe 303. The on-off state of the on-off valve is controlled based on temperature, humidity, and dew-point temperature information output by the thermo-hygrometer 304. When a semiconductor test (power cycle test) is started, the test circuit 131 calculates the dew-point temperature at a predetermined cycle and supplies dry air 306 from the dry air pipe 303 until a predetermined condition is met. In one embodiment, the condition is that the dew-point temperature calculated based on the temperature and relative humidity measured by the thermo-hygrometer 304 is equal to or lower than a predetermined set value.

[0146] While the semiconductor module 117 is energized in the predetermined cycle, the test circuit 131 continues to calculate the dew-point temperature at each predetermined cycle and monitors whether the calculated dew-point temperature is within a predetermined range. When the dew-point temperature falls below a predetermined value, the test begins. When the dew point temperature is outside a predetermined range, the test circuit 131 supplies dry air 306 from the dry air pipe 303. When the dew point temperature falls below a set value, the test circuit 131 stops the supply of dry air 306.

[0147] The relative humidity of the dry air injection (filling) container (chamber) 208 is controlled to prevent condensation on the test object. If the coolant leaks or condensation occurs during the power cycle test, the liquid leakage sensor 512 detects this and the test circuit 131 stops the power cycle test. The leaked coolant and water resulting from condensation flow into drain groove 507 and are discharged from outlet 508, thereby preventing water from leaking into the lower chambers (chamber A, chamber B).

[0148] According to the semiconductor device testing apparatus (power cycle testing apparatus) of the present invention, dry air 306 is supplied from dry air pipe 303, and the relative humidity of dry air injection (filling) container (chamber) 208 is appropriately controlled, thereby suppressing the occurrence of condensation during the power cycle test. As a result, the power cycle test can be performed over a wider temperature range (including temperatures below 0°C). The test conditions are set by changing the current Id, gate voltage Vgs, and voltage Vce so that the temperature information Tj and temperature information Tc of the semiconductor element (transistor) 117 to be tested reach predetermined values. Tj is temperature information obtained mainly from a diode 119 or the like that measures the temperature of the transistor 117, and Tc is temperature information obtained by measuring the package temperature of the transistor 117 using a thermocouple or the like.

[0149] If the temperature information Tj changes, it is determined that the transistor 117 has deteriorated or its characteristics have changed, and the test of the transistor 117 is stopped, or the control method is changed, or the test conditions are changed. Also, an alarm is issued as necessary.

[0150] 1 and 2, a hole is formed in the partition wall 214a to insert the conductive plate 204. A hole is formed in the partition wall 214b to insert the fork plug 205. The partition wall 214 functions as a portion for holding and supporting the fork plug 205.

[0151] As shown in Figures 3 and 4, the upper part of the test device 210 has a power supply device 132 that supplies test current and test voltage to the semiconductor element 117, and a controller circuit 111 that controls the semiconductor element 117 etc. or sets test conditions.

[0152] The controller circuit 111 sets test conditions by changing the current Id, gate voltage Vg, and voltage Vce so that the temperature information Tj of the semiconductor element 117 becomes a predetermined value, and then performs the test. The controller circuit 111 controls the power supply device 132, which supplies a test voltage Vd and a test current Id to the semiconductor device 117 to be tested.

[0153] When the temperature information Tj changes by a predetermined ratio or by a predetermined value, it is determined that the semiconductor element 117 has deteriorated or its characteristics have changed, and the test of the semiconductor module 117 and the semiconductor element 117 is stopped or the test method or control method is changed. The test circuit can be set or changed in a short time by changing the connection using the fork plug 205.

[0154] This can be achieved by concentrating the openings 216 at a specific portion such as the end side of the test device 210, and pulling out the power supply (connection) wiring 211 connected to the semiconductor element 117 in the same direction and inserting it into the openings 216. Therefore, the work can be completed in a short time, and the power supply (connection) wiring 211 can also be arranged in a fixed direction, making it easy to work with thick power supply (connection) wiring 211. In addition, the test device 210 can be made smaller.

[0155] The temperature of the semiconductor element 117 is maintained at a specified or predetermined value by heating or cooling the circulating water in the temperature adjustment jacket 134. The temperature of the semiconductor element, etc. is periodically changed in accordance with the test conditions, and is cooled or heated to a constant value. Temperature information Tj of the semiconductor element 117 is measured, and the temperature adjustment jacket (temperature setting device) 134 is controlled so as to maintain the measured temperature information Tj at a constant value.

[0156] The characteristic change of the transistor 117 is determined or judged based on the change in temperature information Tj, etc. Also, the characteristic change, reliability, and lifespan of the transistor 117 are evaluated based on the time it takes for the voltage Vce to reach a predetermined voltage, the time it takes for the transistor 117 to break down, etc. The temperature adjustment jacket (temperature setting device) 134 is modularized together with the semiconductor element 117 and sold.

[0157] In the following explanation, the temperature information Tj is mainly used as an example. If the temperature information Tj changes, it is determined that the transistor 117 has deteriorated or its characteristics have changed, and the test of the transistor 117 is stopped or the control method is changed.

[0158] In the following description, the current flowing through or applied to the transistor 117 is the test current Id, but the present invention is not limited to this. It goes without saying that Id may be a current that changes at a predetermined cycle or a predetermined time. Furthermore, Id is not limited to a current, and may be a voltage.

[0159] In the semiconductor element testing method of the present invention, the characteristic change of the transistor 117, which is a semiconductor element, is judged or determined based on the change in temperature information Tj, etc. Also, the characteristic change, reliability, and lifespan of the transistor 117 are evaluated based on the time from when the voltage Vce reaches a predetermined voltage to when the transistor 117 breaks down, etc.

[0160] In the semiconductor testing method of the present invention, the external conditions are changed in response to the deterioration or characteristic changes of transistor 117. For example, if transistor 117 generates heat, the water temperature is lowered. Lowering the water temperature reduces the current flowing through transistor 117, preventing the deterioration and characteristic changes of transistor 117 from progressing. As a result, the lifespan of transistor 117 is extended. Therefore, the lifespan and reliability characteristics of transistor 117 under specified set conditions can be quantitatively measured and determined.

[0161] The temperature of the transistor 117 is maintained at a specified or predetermined value by heating or cooling the circulating water in the chiller (cooling water circulator) unit 136. The temperature of the transistor, etc. is periodically changed in accordance with the test conditions, and the transistor is cooled or heated to a constant value. The chiller (cooling water circulator) unit 136 is also controlled to measure temperature information Tj of the test transistor and maintain the measured temperature information Tj at a constant value.

[0162] The chiller (cooling water circulator) unit 136 is preferably configured as an external component of the test device 210. This is because the capacity of the chiller (cooling water circulator) unit 136 may be changed depending on the test temperature and test conditions.

[0163] The chiller (cooling water circulation device) unit 136 is configured to maintain a constant temperature for equipment, etc., by circulating water or heat transfer medium while managing its temperature. It is primarily used for cooling, but can also heat as well as cool. It is configured to be able to control various temperatures. Feedback control is performed using temperature information Tc and temperature information Tj.

[0164] The test circuit 131 measures or acquires the temperature of the element terminal 226 from a thermocouple attached to the element terminal 226 or in its vicinity, and has the function of controlling the test to stop or suspend the test or issue an alarm if the temperature is above a predetermined level.

[0165] The test circuit 131 includes a power supply device 132 that supplies a test current and a test voltage to the transistor 117, and a control and measurement circuit 133 that controls the transistor 117 or sets test conditions.

[0166] In the embodiment of the present invention, the power supply device 132 is not limited to one that outputs the test current Id. For example, a power supply device that can set a maximum (limit) voltage may be used as the power supply device 132. For example, the power supply device 132 may function to output a predetermined constant current at the set maximum voltage under certain conditions.

[0167] The test current Id to be passed through the transistor 117 is supplied by operating the power supply device 132. The power supply device 132 is controlled to be activated / deactivated (on / off) by a signal from the controller circuit (controller) 111. Also, the test current Id can be switched between being output and not being output.

[0168] For example, when a constant current of the test current Id is output, the output terminal voltage can be set to a predetermined maximum voltage. Also, the output current and output voltage can be changed in conjunction with the test state of the transistor 117.

[0169] Temperature information Tj of transistor 117 and the like are input to control measurement circuit 133, which controls chiller (cooling water circulator) unit 136 based on the temperature information Tj, etc. Alternatively, it controls chiller (cooling water circulator) unit 136 so that temperature information Tj, etc., becomes a predetermined value.

[0170] Although the present specification describes circulating water, it is not limited to water. Ethylene glycol, glycerin, chlorofluorocarbon, etc. may also be used, and forced air cooling may also be used. Cooling with hydrogen gas is also an example. Cooling and heating with liquid metal such as gallium is also an example.

[0171] A chiller (cooling water circulation device) unit 136 controls the liquid in a circulating water pipe 135 to keep the water temperature within a range of, for example, -1°C to +100°C, and supplies it to a heating / cooling plate (temperature control jacket) 134 of the test unit. The heating / cooling plate 134 has a sufficiently large heat capacity.

[0172] From the measurement results, the temperature coefficient K is calculated. The temperature of the heating / cooling plate (temperature adjustment jacket) 134 is set to a plurality of temperatures, the temperature coefficient K at each temperature is calculated, and the accuracy of the temperature coefficient value is improved from the results.

[0173] The temperature coefficient K is determined by heating and cooling transistor 117 to a predetermined temperature using heating / cooling plate (temperature-regulating jacket) 134, passing a constant current Ic through transistor 117 or diode 119, and measuring the terminal voltage. The terminal voltage versus temperature can be obtained by varying the predetermined temperature and measuring the terminal voltage of transistor 117 or diode 119. Therefore, the temperature coefficient K of transistor 117 can be determined from the terminal voltage versus temperature.

[0174] As shown in FIG. 3, in the C1 room, a test stand 505, a heating / cooling plate (temperature adjustment jacket) 134, a circulating water pipe 135, etc. are arranged, and also a transistor 117 to be tested is arranged.

[0175] A partition wall 212 is disposed or formed between the C1 and C2 chambers. The partition wall 212 functions as a partition plate and an electromagnetic shield plate. The same applies to the partition walls 214 and 215.

[0176] A partition wall 214 is formed between the C1 chamber and the A and B chambers. A water leakage sensor 512 is disposed in the C1 chamber. The water leakage sensor 512 is configured to stop the semiconductor device testing equipment or issue an alarm if the circulating water (cooling medium) or the like leaks.

[0177] A drain groove 507 is formed in the dry air injection (filling) container (chamber) 208, and is configured so that when the circulating water (cooling medium) leaks from the connector 371 or the like, the circulating water (cooling medium) flows into the drain groove 507 and is discharged outside the semiconductor device testing apparatus. As described above, even if the circulating water pipe 135 or the like is damaged, the circulating water (cooling medium) or the like is not leaked into the lower chambers A and B.

[0178] A partition wall 215 is formed between chamber A in which the power supply unit 132 is disposed and chamber B in which the drive circuit system is disposed. Electromagnetic (electrostatic) shielding plates are disposed on the partition walls 214, 215, and 212 to shield noise from the power supply unit 132 and prevent the noise from being applied to the drive circuit system in chamber B.

[0179] In the embodiment of the present invention, the fork plug 205 is inserted from chamber C2 and connected to the conductive plate 204 in chamber B. It is easy to push the fork plug 205 from the top to the bottom. However, the present invention is not limited to this. For example, the conductive plate 204 may be placed in chamber C2, and the fork plug 205 may be inserted from chamber B to establish an electrical connection.

[0180] 3 is a block diagram and explanatory diagram of a semiconductor device (electrical device) testing device according to the present invention, which shows two power supply devices 132 (power supply device 132a and power supply device 132b).

[0181] In FIG. 3, two power supply devices 132a and 132b are shown. The number of power supply devices 132 is not limited to two. The electrical element testing apparatus of the present invention may include one or more power supply devices 132. Furthermore, the more power supply devices 132 are installed, the more diverse the test current Id that can be generated. Note that, as in the embodiments of FIGS. 21, 22, 23, and 24, for example, by configuring a single power supply device 132 to test multiple semiconductor devices 117, the price of the testing apparatus 210 can be reduced.

[0182] In the embodiment of the present invention, the power supply device 132 is not limited to one that outputs the test current Id. For example, a power supply device that can set a maximum (limit) voltage may be used as the power supply device 132. For example, the power supply device 132 may function to output a predetermined constant current at the set maximum voltage under certain conditions.

[0183] For example, when a constant current of the test current Id is output, the output terminal voltage can be set to a predetermined maximum voltage. Also, the output current and output voltage can be changed in conjunction with the test state of the transistor 117.

[0184] When the gate leakage current, channel-to-channel voltage Vce, channel-to-channel resistance, etc. of the transistor 117 under test are outside a predetermined range or exceed a predetermined value, the switch circuit 124 is turned on or off. Also, the power supply device 132 is turned on or off. Turning on the switch circuit 124 supplies the test current Id or test voltage Vd, and turning on the switch circuit 124 stops the supply of the test current Id or test voltage Vd.

[0185] When the gate leakage current, channel-to-channel voltage Vce, channel-to-channel resistance, etc. of the transistor 117 under test are outside a predetermined range or exceed a predetermined value, the switch circuit 124 is turned on or off, and the power supply device 132 is turned on or off. Turning on the switch circuit 124 supplies a test current or test voltage, and turning on the switch circuit 124 stops the supply of the test current or test voltage.

[0186] The power supply device 132 supplies power (current, voltage) in synchronization with a control signal from the controller circuit 111. The power supply device 132 can set the maximum voltage value to be output.

[0187] As shown in FIGS. 38 and 39, by applying an on-voltage and an off-voltage to the gate terminal of the transistor 117 periodically (one cycle t cycle), a pulsed test current Id can be applied to the transistor 117.

[0188] The power supply device 132 outputs a large test current Id for testing a semiconductor element (electric element) 117 such as a transistor 117. The power supply device 132 supplies power (current, voltage) in synchronization with a control signal from the controller circuit (controller) 111.

[0189] In one embodiment, the power supply device 132 is placed in room A. The semiconductor element (transistor) 117 to be tested and the like are placed in room C1. The test circuit such as the switch circuit board 201 is placed in room B, and the power supply circuit is placed in room A.

[0190] The electrical element testing apparatus of the present invention separates the space within the electrical element testing apparatus where semiconductor elements (transistors) 117 to be tested and the power supply device 132 that generates the test current for the transistors 117 and the like. Partitions 212, 214, and 215 are provided in testing apparatus 210 to separate the chambers. The partitions do not have to be walls. It goes without saying that they may be objects that separate functions.

[0191] In this specification, the drawings, etc., a plug or other component used in a connection portion will be described as a fork plug 205. However, it is not limited to a connection plug or fork plug 205, and any component of any shape, configuration, or structure may be used as long as it is detachable and can be fitted with another conductive component at its tip to achieve electrical connection. For example, a fork connector is an example. It may also be a connection connector, a crimp connector, etc.

[0192] The connecting members such as the fork plug 205 are not limited to being attached to all terminals, etc. For example, it goes without saying that they may be formed or placed in areas that are constantly detached or frequently used, and other areas may be secured by screws, bolts, etc.

[0193] The transistor to be tested is connected to a circuit board having a switch circuit, etc., by inserting a fork plug 205 through an opening 216 provided in a partition wall 214 and electrically contacting the fork plug 205 with a conductor plate 204 provided on the circuit board 201.

[0194] The number of power supply devices 132 is not limited to two. For example, the semiconductor device (electrical device) test device of the present invention may have three or more power supply devices 132. Also, a power supply device 132 configured to be able to output two voltages or currents may be used. The more power supply devices 132 are used, the more diverse the waveforms of the test current Id that can be generated. Also, one power supply device 132 may be associated with one semiconductor device 117.

[0195] The switch circuit 124 is mounted or placed on a switch circuit board 201 made of a printed circuit board. The conductor plate (copper bar) 204 is mounted or placed on the printed circuit board. The printed circuit board used is one that has heat resistance and heat dissipation properties.

[0196] The test current Id is output after checking whether each electrical connection is established, such as the electrical connection between the fork plug 205 and the conductor plate 204, the electrical connection between the fork plug 205 and the conductor plate 204, and the electrical connection between the connector 202 and each terminal of the semiconductor element 117. If the test current Id does not flow, the test does not start.

[0197] Temperature sensors 316 are mounted or placed on the conductor plate 204 and the semiconductor element (electrical element) 117 to be tested to monitor the temperature. If the temperature exceeds a certain level, the controller circuit 111 stops the test or stops the semiconductor element test device (electrical element test device, power cycle test device) 210.

[0198] The on / off states of the power supply device 132 and the switch circuit 124 are monitored and controlled by the controller circuit 111. If normal operation of the power supply device 132, the switch circuit 124, and the blower fan 511 cannot be confirmed, the test current Id is not applied to the transistor 117 to be tested. Furthermore, the power supply device 132 does not output the test current (test voltage).

[0199] If the temperature does not rise above a certain level after the test has started, the controller circuit 111 determines that there is a defect in the semiconductor element 117, destruction of the semiconductor element 117, or a faulty electrical connection, and stops the test. Also, an alarm is issued by the alarm device 509.

[0200] If the pressure of the refrigerant (liquid, circulating water) measured by water pressure gauge 510 does not rise above a certain level after the start of or during the test, controller circuit 111 will stop the test, determining that there is an abnormality in chiller (cooling water circulator) unit 136, damage to refrigerant (circulating water) pipe 135, or a malfunction in the electrical system. In addition, alarm 509 will sound an alarm. It goes without saying that the above matters also apply to other embodiments described in this specification and the drawings, and can also be combined with other embodiments.

[0201] The power supply device 132 outputs a large test current Id (or test voltage Vd) for testing the transistor 117. The power supply device 132 supplies power (current, voltage) in synchronization with a control signal from the controller circuit (controller) 111. The power supply device 132 can set a maximum voltage value to be output.

[0202] If the output of temperature sensor 316 attached to conductive plate 204 or the like exceeds a predetermined temperature or is outside a predetermined temperature range, power supply circuit 132 is controlled to be off (shut off, open). If the output of temperature sensor 316 attached to fork plug 205 or the like exceeds a predetermined temperature or is outside a predetermined temperature range, power supply device 132 is controlled to be off (shut off, open). Temperature sensor 316 is disposed on conductive plate 204 where fork plug 205 and conductive plate 204 come into contact, and monitors the temperature. Temperature sensors 316 are also disposed near the contact points between element terminal 226 and flexible conductor 381 and near the contact points between element terminal 226 and connecting fitting 386.

[0203] The temperature sensor 316 is preferably also disposed in the semiconductor element 117 or the module 117 made up of the semiconductor element, etc. It measures the temperature of the semiconductor element 117, etc., and transmits a signal to the controller circuit 111 when the temperature exceeds a predetermined temperature or is outside a predetermined temperature range. The controller circuit 111 controls the control measurement circuit 133 and the power supply device 132 based on the transmitted signal.

[0204] Conductive plate 204 is not limited to a plate shape, and may be cylindrical, rod-shaped, connector-shaped, etc. Conductive plate 204 and fork plug 205 can be electrically connected by fitting, press-fitting, pressure welding, insertion, crimping, clamping, sandwiching, etc. In particular, it is preferable to set a positional relationship such that fork plug 205 can be connected to conductive plate 204 by inserting it from bulkhead 214.

[0205] Conductive plate 204 will be described as a copper plate having a thickness of 5 mm and a width of 50 mm, for example. The length of conductive plate 204 is, for example, 350 mm. Conductive plate 204 is configured so that at least one end thereof protrudes from circuit board 201. This protruding portion is fitted with or connected to a connecting object (connecting member) such as fork plug 205, as shown in FIG. 4.

[0206] In the embodiment of the present invention in Fig. 1, as an example, the semiconductor element 117 will be described as the semiconductor module 117 described in Fig. 5. The present invention is not limited to the semiconductor module 117 in Fig. 5, and it goes without saying that the present invention can also be applied to, for example, the semiconductor modules 117 in Figs. 6 and 7, etc. It also goes without saying that the present invention can be applied to the semiconductor elements and electric elements in Fig. 37, etc. It also goes without saying that the present invention can be applied to a semiconductor module 117 in which the semiconductor element 117 and a heat sink (not shown) are integrated.

[0207] The semiconductor element (electrical element) testing device of the present invention can test and evaluate a wide variety of semiconductor elements and electrical elements, and the semiconductor element (electrical element) testing method of the present invention can test and evaluate a wide variety of semiconductor elements and electrical elements.

[0208] 1, fork plug 205e is electrically connected to collector terminal 226a of transistor 117s, fork plug 205g is electrically connected to emitter terminal 226c of transistor 117s (collector terminal of transistor 117m), and fork plug 205c is electrically connected to emitter terminal 226b of transistor 117m.

[0209] It should be noted that the embodiment of the present invention is not limited to connecting the fork plug 205 to the conductor plate 204. As shown in Figures 1, 22, etc., the conductor plate 204 and the power supply (connection) wiring 211 may be fastened with a connection bolt 219 or a screw. Needless to say, they may also be connected with a crimp terminal.

[0210] A temperature sensor (temperature measurement circuit) 316 is arranged or connected in contact with or in close contact with the conductive plate 204. If the electrical connection between the fork plug 205 and the conductive plate 204 is poor, the temperature sensor 316 detects heat generated at the connection (contact portion) and notifies the controller circuit 111 that an abnormal temperature has occurred.

[0211] Examples of the sensor portion of temperature sensor 316 include a thermocouple and a thermistor. In particular, it is preferable to arrange or install the thermocouple by drilling holes in flexible conductor 381, connecting fitting 386, and conductive plate 204 and inserting the thermocouple into the drilled holes.

[0212] Transistor 117s and transistor 117m are connected in series. In the embodiment of Fig. 1, the emitter terminal (E) of transistor 117s is connected to the collector terminal (C) of transistor 117m. Transistor 117s is connected to control measurement circuit 133b, and transistor 117m is connected to control measurement circuit 133a.

[0213] The control measurement circuit 133 is configured or arranged with a gate signal control circuit 112, a gate driver circuit 113, a variable resistance circuit (current measurement element) 125, a controller circuit (controller circuit board) 111, a temperature measurement circuit 115, and a buffer amplifier (terminal voltage output circuit) 116. In the control measurement circuit 133, a connector 202 is connected to a signal connection section 227 shown in Figures 5 and 28, and signals are transmitted via a signal line 203.

[0214] The gate driver circuit 113 has a built-in DA converter circuit. Data such as an on-voltage or off-voltage is sent from the controller circuit 111 to the gate signal control circuit 112. The gate signal control circuit 112 performs timing control and voltage control, and applies a gate signal to the gate driver circuit 113. The gate driver circuit 113 functions as a drive circuit, and applies a Vgs signal to the gate terminal of the transistor 117 via a resistor circuit 125.

[0215] The output side of the gate driver circuit 113 has a variable resistance circuit 125. The resistance value R of the variable resistance circuit 125 can be varied between 0 (Ω) and 500 (Ω). The gate driver circuit 113 is configured so that it can be set to a constant voltage or a voltage that changes over time.

[0216] The variable resistance circuit 125 is not limited to a variable resistance, but may be a fixed resistance circuit that exhibits a constant resistance value. The resistance value of the fixed resistance circuit is set by replacing the resistance element with a resistance value that is required. The gate driver circuit 113 is configured so that it can be set (output) by the gate signal control circuit 112 to a voltage Vgs that changes periodically and over time.

[0217] It has a voltage measurement circuit 126 that measures the voltage across the resistance R. The voltage measurement circuit 126 is a current measurement circuit that measures the current flowing into or out of the gate terminal of the transistor 117. The current can be calculated by measuring the voltage between both terminals of the resistance circuit 125. Note that the current flowing into the gate of the transistor 117 may also be measured directly as a "leakage current, drive current." The voltage measurement circuit 126 can measure the leakage current flowing into the gate terminal of the transistor 117. By adjusting the value of the resistance R of the variable resistance circuit 125, the slope angle of the voltage waveform at the rising and falling edges of the gate signal can be adjusted or set.

[0218] The gate driver circuit 113 can set the slope of the rising waveform (rise time Tr) and the slope of the falling waveform (fall time Td) of the gate voltage Vg applied to the gate terminal g of the transistor 117. By separately adjusting the rise time Tr and the fall time Td, the on-time and on-characteristics of the transistor 117 are controlled to predetermined values.

[0219] As described above, the electrical element testing apparatus and testing method of the present invention can control, adjust, or set the resistance value R of the variable resistance circuit 125 connected to the gate terminal of the transistor 117 or the rise time / fall time of the gate driver circuit 113.

[0220] The constant current circuit 118 outputs a set constant current Ic. The constant current Ic is applied to a diode 119. When the temperature of the transistor 117 changes, the terminal voltage of the diode 119 changes. By monitoring the terminal voltage Vi of the diode 119, the temperature change of the transistor 117 can be measured or observed.

[0221] The temperature or temperature change is called temperature information Tj. Therefore, the temperature information Tj is the voltage between the channel terminals of the transistor (between the collector and emitter terminals of the transistor 117, or between the source and drain terminals of the transistor 117).

[0222] 1 etc., the temperature information Tj is the voltage between the anode and cathode terminals of the diode 119 or between the collector and emitter terminals of the transistor 117. Therefore, without using the diode 119, the temperature change of the transistor 117 can be measured by passing a constant current through the transistor 117 and measuring the voltage across the channel of the transistor. The measured voltage becomes the temperature information Tj.

[0223] The temperature information Tj can also be obtained from the transistor 117 or a temperature sensor 316 attached to the semiconductor module 117. For example, the semiconductor module 117 is equipped with a thermistor.

[0224] The diode 119 may be a diode of another semiconductor chip mounted on the semiconductor chip on which the transistor 117 is formed. The diode 119 may utilize a parasitic diode that is formed secondarily when the transistor 117 is formed.

[0225] The constant current circuit 118 supplies a diode 119 disposed or formed between the channels of the transistor 117 or a constant current Ic between the channels of the transistor 117 .

[0226] The operational amplifier circuit 116 buffers (lowers the output impedance of) the terminal voltage of the diode 119 or the voltage between the channel terminals of the transistor 117, and outputs it as the Vi voltage. The operational amplifier circuit 116 is a low-impedance output circuit.

[0227] The Vi voltage is converted from analog to digital by the temperature measurement circuit 115. The Vi voltage changes depending on the temperature of the transistor 117. Therefore, by measuring the Vi voltage, the temperature of the transistor 117 can be obtained. In other words, temperature information Tj of the transistor 117 can be obtained.

[0228] The Vi voltage is converted from analog to digital by the temperature measurement circuit 115. The Vi voltage changes depending on the temperature of the transistor 117. Therefore, by measuring the Vi voltage, the temperature of the transistor 117 can be obtained. In other words, temperature information Tj of the transistor 117 can be obtained. The rate of change, amount of change, relative temperature, and absolute temperature can be calculated from the Vi voltage.

[0229] The terminal voltage Vi of the diode or transistor is applied to a temperature measurement circuit 115. The temperature measurement circuit 115 obtains temperature information Tj of the transistor 117 from the terminal voltage Vi of the diode, or measures the temperature, and transfers it to the controller circuit 111.

[0230] As shown in FIG. 38, the gate driver circuit 113 applies a set on-voltage to the gate terminal g of the transistor 117 at a set frequency (on-off cycle t cycle).

[0231] The test current Id to be passed through the transistor 117 is supplied by operating a power supply device 132. The power supply device 132 is controlled to be activated / deactivated (on / off) by a signal from a controller circuit (controller) 111. The power supply device 132 also switches between outputting and not outputting the test current Id (Idm, Ids). The timing of the control measurement circuit 133 is controlled by the controller circuit (controller) 111.

[0232] The control measurement circuit 133a is connected to the transistor 117m, and applies a gate signal Vgs2 to the gate terminal g of the transistor 117m to control the on / off of the transistor 117m. It also obtains temperature information Tj of the transistor 117m to measure and acquire the characteristics and characteristic changes of the transistor 117m.

[0233] The control measurement circuit 133b is connected to the transistor 117s, and applies a gate signal Vgs1 to the gate terminal g of the transistor 117s to control the on / off of the transistor 117s. It also obtains temperature information Tj of the transistor 117s to measure and acquire the characteristics and characteristic changes of the transistor 117s.

[0234] The control and measurement circuit 133 is disposed on the control circuit board 120. The control and measurement circuit 133m applies a gate signal to the transistor 117m to control and process the transistor 117m. The control and measurement circuit 133s applies a gate signal to the transistor 117s to control and process the transistor 117m.

[0235] As an example, as shown in FIGS. 39, 40, and 41, the voltages output by the gate driver circuit 113 are an on-voltage V2, an on-voltage V1, and an off-voltage Voff (0 V, V0 voltage). The gate driver circuit 113 can output voltages of three or more levels. The off-voltage Voff may be a Vn voltage (negative voltage) that has a potential lower than 0 V. Multiple off-voltages may also be used, such as a Voff voltage and a Vt voltage.

[0236] 1, the switch circuit 124 is represented by symbols 124a, 124b, and 124c, and is mounted or disposed on a switch circuit board 201 such as a printed circuit board.

[0237] Any device with a small resistance (on-resistance) when closed (on) can be used as the switch circuit 124. Examples include a transistor, a mechanical relay, a phototransistor, a photodiode switch, and a photoMOS relay.

[0238] It is particularly preferable to use a power MOSFET for the switch circuit 124. A MOSFET is preferable because the voltage (Vsd) between the channels is small. A heat sink (not shown) is attached to the switch circuit 124 for heat dissipation. The switch circuit 124 is synchronously controlled by the controller circuit 111.

[0239] Two conductor plates 204 and a switch circuit 124 connected to the two conductor plates 204 are arranged on the switch circuit board 201. When the switch circuit 124 is turned on (closed), the two conductor plates 204 are electrically short-circuited. When the switch circuit 124 is turned off (open), the two conductor plates 204 are electrically disconnected.

[0240] Depending on the test purpose and test circuit, the conductor plate 204 may be one conductor plate 204 on the switch circuit board 201. Also, three or more conductor plates 204 may be mounted on the switch circuit board 201. Also, as shown in Figures 20, 21, 22, 23, etc., the conductor plate 204 may be connected to a ground potential or the like, and the conductor plate 204 may be used as a single unit (for example, not mounted on the switch circuit board 201), and the fork plug 205 may be connected to or fitted into the conductor plate 204.

[0241] 1, switch circuit 124b, conductor plate 204a, and conductor plate 204b are connected to or arranged on switch circuit board 201a. Switch circuit 124a, conductor plate 204c, and conductor plate 204d are connected to or arranged on switch circuit board 201b. Switch circuit 124c, conductor plate 204f, and conductor plate 204g are connected to or arranged on switch circuit board 201c.

[0242] A first output terminal of power supply device 132 is connected to conductive plate 204a by connecting bolt 219a. A second output terminal of power supply device 132 is connected to conductive plate 204b by connecting bolt 219b. The second output terminal is also connected to ground (earth).

[0243] The conductive plate 204b is fitted to the tip of the fork plug 205c, and the fork plug 205c is connected to the emitter terminal of the transistor 117m. The fork plug 205c is set to the earth potential via the conductive plate 204b. Therefore, the fork plug 205c may be directly connected to the earth line (ground).

[0244] When the switch circuit 124b is turned on, the conductor plates 204a and 204b are short-circuited, causing a short circuit between the outputs of the power supply circuit 132, and a short-circuit current Im flows. The output of the power supply circuit 132 is short-circuited by the short-circuit current Im.

[0245] By turning on (closing) the switch circuit 124b, the charge between the channel terminals of the transistor 117m can be discharged. Also, the charge between the output terminals of the power supply device 132b can be discharged. Also, by turning on (closing) the switch circuit 124b, the charge between the terminals 226a and 226b of the transistor 117m can be discharged.

[0246] A fork plug 205d is connected to the conductor plate 204c of the switch circuit board 201b. A fork plug 205e is connected to the conductor plate 204d of the switch circuit board 201b. The fork plug 205d is connected to the power supply circuit 132, and the fork plug 205e is connected to the element terminal 226a of the transistor 117.

[0247] When the switch circuit 124a is turned on, the conductor plates 204c and 204d are short-circuited, and the test voltage Vd and test current Id are supplied (applied) from the power supply circuit 132 to the element terminal 226a of the transistor 117.

[0248] A fork plug 205f is connected to the conductor plate 204f of the switch circuit board 201c. A fork plug 205g is connected to the conductor plate 204g of the switch circuit board 201c. The fork plug 205f is connected to the power supply circuit 132, and the fork plug 205g is connected to the element terminal 226c of the transistor 117.

[0249] When the switch circuit 124c is turned on, the conductive plates 204f and 204g are short-circuited. The test voltage Vd and test current Id of the power supply circuit 132 are supplied (applied) to the element terminal 226c of the transistor 117.

[0250] 10, 11 and 28 are explanatory diagrams of the connection state between the element terminals 226 and the signal terminals 225 of the semiconductor module 117. However, for ease of drawing, they are illustrated schematically.

[0251] A temperature adjustment jacket (temperature setter, temperature adjuster) 134 is attached to the semiconductor module 117. A plurality of semiconductor chips are mounted on the semiconductor module 117, and terminals of the semiconductor chips are led out to element terminals 226 and signal terminals 225.

[0252] Contact metal fitting 388 is connected so as to come into contact with element terminal 226. Contact metal fitting 388c is attached to element terminal 226 of semiconductor module 117 using screw (fixture) 384b. Flexible conductor 381 is fastened to contact metal fitting 388c by screw (fixture) 384a at flexible conductor metal fitting 382a.

[0253] The contact fittings 388 also have the function of adjusting the position of the element terminals 226 of the semiconductor module 117 and the height position of the connection fittings 386. When the element terminals 226 and the connection fittings 386 are directly connected, the contact fittings 388 can be omitted. The semiconductor module 117 is positioned and fixed by fixtures 387 (fixtures 387a, 387b, 387c, and 387d).

[0254] The flexible conductor 381 is disposed on the underside of the temperature adjustment jacket 134. A connecting fitting 386 is fastened to a flexible conductor fitting 382b of the flexible conductor 381 with a screw 384c. The element terminal 226c is disposed on the side opposite the element terminals 226a and 226b. By passing the flexible conductor 381 through the back surface of the semiconductor module 117 and connecting it to the element terminal 226c, the connection work with the element terminal 226 becomes easy.

[0255] The element terminal 226c, the element terminal a, and the element terminal 226b are arranged in adjacent positions. Signal noise is easily carried by the power supply (connection) wiring 211 connected to adjacent element terminals 226. As shown in FIG. 10, by arranging the flexible conductor 381 so that it passes through the back surface of the semiconductor module 117, the power supply (connection) wiring 211b and the power supply (connection) wiring 211c are not adjacent to each other, and the influence of noise can be suppressed. Note that the flexible conductor 381 may also be arranged on the upper side of the semiconductor module 117, at a position away from the connecting fitting 386a.

[0256] The flexible conductor 381 has slidability and flexibility, which facilitates connection with the element terminal 226c. Furthermore, even if stress is applied from the power supply (connection) wiring 211c, no mechanical pressure is applied to the element terminal 226c, and the connectivity with the element terminal 226c is maintained.

[0257] A temperature sensor 316 is disposed on the flexible conductor 381. The temperature sensor 316 monitors heat that may be generated in the connection fitting 386b and the flexible conductor fitting 382b. For example, if the screw 384c is not properly attached, heat will be generated at the connection. If the heat generation exceeds a predetermined level, an alarm will be sounded, or the test will be interrupted or stopped.

[0258] The semiconductor device testing apparatus (power cycle testing apparatus) of the present invention performs testing by supplying a high current or a high voltage to the test object. When a high current (test current Id) flows or a high voltage Vd is applied, noise occurs, making the test state unstable. Furthermore, the noise causes the semiconductor device testing apparatus (power cycle testing apparatus) to malfunction.

[0259] In this embodiment of the present invention, the flexible conductor 381 is disposed on the back surface of the semiconductor module 117. In other words, the flexible conductor 381 is not disposed on the front surface of the semiconductor module 117. Therefore, as shown in FIG. 28, there is a gap between the connecting fitting 386a connected to the collector terminal 226a and the connecting fitting 386b connected to the emitter terminal 226b. Furthermore, because the flexible conductor 381 is disposed on the back surface of the semiconductor module 117, there is a gap between the flexible conductor 381 connected to the CE terminal 226c and the connecting fitting 386a, and between the flexible conductor 381 and the connecting fitting 386b. Therefore, noise caused by a high current (test current Id) or a high voltage Vd is suppressed.

[0260] It is preferable to place or configure a shield plate (not shown) between the element terminals 226. By placing a shield plate between the element terminals 226 of the semiconductor element 117, it is possible to prevent malfunction of the semiconductor element 117 when a test is being performed by supplying a test current or the like. By setting adjacent shield plates at different potentials, it is possible to further prevent malfunction and noise.

[0261] Note that when flexible conductor 381 does not need to be configured to have a curvature of the conductor, a metal plate (for example, connecting metal fitting 386) may be used. For example, two connecting metal fittings 386 may be combined and connected at 90° to form a bent portion, which may be used in place of flexible conductor 381.

[0262] The flexible conductor 381 is located and arranged on the underside of the temperature adjustment jacket 134, passes through the underside, is bent upward, and is fixed to the contact fitting 388c. The element terminal 226c located on the left side of the semiconductor module 117 passes through the underside of the semiconductor module 117 and is drawn out from the left side to the right side of the paper.

[0263] Contact fitting 388a comes into contact with element terminal 226a located on the right side of semiconductor module 117, and connecting fitting 386a is attached with screw 384c. Also, contact fitting 388b comes into contact with element terminal 226b located on the right side of semiconductor module 117, and connecting fitting 386a is attached with screw 384c.

[0264] Figure 29 is an explanatory diagram and diagram of the configuration of the flexible conductor 381. However, it is illustrated schematically. Figure 29(a) is a plan view of the flexible conductor 381, and Figure 29(b) is a side view of the flexible conductor 381.

[0265] Flexible conductor fittings 382 are formed on both ends of flexible conductor 381 for fastening screws or the like. Flexible conductor fitting 382a is fixed to contact fitting 388c by screw 384a. Flexible conductor fitting 382b is formed with mounting hole 383b for adjusting the position of screw 384c. Flexible conductor fitting 382b is connected to connecting fitting 386c by screw 384c. By adjusting the positions of mounting hole 383b and screw 384c, the position of contact fitting 388c can be properly aligned with element terminal 226c. Note that flexible conductor 381 may also be formed by bending thick copper wiring (copper wire, conductor). Flexible conductor 381 may be any member (conductor) that is bendable, flexible, and slidable. As shown in FIG. 29(b), the flexible conductor 381 has sliding properties, spring properties, and elasticity, and can be configured to bend in the A direction and the B direction.

[0266] When the power supply (connection) wiring 211 or the like vibrates, a force is applied to the element terminal 226 attached to the wiring attachment bolt 391, which may cause the connection with the element terminal 226 to become unstable. By configuring the flexible conductor 381 to have sliding properties, it is possible to absorb vibrations and fluctuations of the power supply (connection) wiring 211 or the like, and close contact with the element terminal 226 is ensured.

[0267] The matters, contents, and specifications for providing the sliding property and springiness of the flexible conductor 381 described in Fig. 29(b) are preferably also applied to the connecting fittings 386a and 386b. By configuring the connecting fittings 386 to have sliding property, springiness, and elasticity, the effects described in Fig. 29(b) are achieved. The connecting fittings 386 are configured to have sliding property, springiness, and elasticity. For example, they are configured and formed in the shape of a thin plate.

[0268] In testing equipment, the test current Id is large and is often supplied intermittently. Therefore, the test current Id generates an electromagnetic force, causing the power supply (connection) wiring 211 to vibrate. As shown in Figure 30(b), by providing the connecting fitting 386 with sliding properties, springiness, and elasticity, the vibration can be absorbed, and the connection state with the element terminal 226, etc., is stabilized.

[0269] Making the connection lengths between fork plug 205 and element terminal 226 equal or nearly equal is effective in terms of measures against noise, EMC (Electromagnetic Compatibility), EMI (Electromagnetic Interference), and EMS (Electromagnetic Susceptibility).

[0270] 30(a), for example, the power supply (connection) wiring 211a, the power supply (connection) wiring 211b, and the power supply (connection) wiring 211c (including the flexible conductor 381) have a longer fork plug 205b and element terminal 226c, and therefore are deviated from equal-length wiring.

[0271] By inserting fork plug 205b connected to power supply (connection) wiring 211c into opening 216c, inserting fork plug 205a connected to power supply (connection) wiring 211a into opening 216b, and inserting fork plug 205c connected to power supply (connection) wiring 211b into opening 216f, and adjusting the length of each power supply (connection) wiring 211, the wiring will become closer to equal length.

[0272] 12, and openings 216a and 216d in FIG. 17, multiple fork plugs 205 can be inserted and the positions of the fork plugs 205 can be set and fixed at any positions, which facilitates equal-length wiring. Also, as shown in hole 383b in FIG. 29, forming a horizontally elongated hole 383b allows screws 384c to be positioned freely and fixed, which facilitates equal-length wiring.

[0273] The present invention realizes equal-length wiring by forming a plurality of openings 216 that can be selectively inserted into the fork plug 205 connected to one power supply (connection) wiring 211, thereby enabling measures against noise and EMC, etc. Also, it is possible to suppress vibration and shaking of the power supply (connection) wiring 211 caused by the flow of the test current Id.

[0274] By selecting whether to connect the power supply (connection) wiring 211 using connecting bolt 391a or connecting bolt 391b, and also selecting whether to connect bolt 219a or connecting bolt 219b, the required length of the power supply (connection) wiring 211 can be adjusted. Therefore, it is possible to connect the power supply (connection) wiring 211a, power supply (connection) wiring 211b, and power supply (connection) wiring 211c with equal lengths. As described above, it is effective to form or configure multiple attachment members (bolts, etc.) for the power supply (connection) wiring 211, etc., on the connecting fitting 386 and fork plug 205. It is also effective to consider the length of the connecting fitting 386 and the attachment position of the contact fitting 388 in consideration of equal lengths of wiring.

[0275] Although the flexible conductor 381 and the like are said to be arranged or installed on the upper surface (front) or lower surface (bottom) of the semiconductor element module 117, it goes without saying that the flexible conductor 381 and the connecting fittings 386 may also be arranged on the side of the semiconductor element module 117.

[0276] In the present invention, the connection bolts are referred to as connection bolts 391 and 219, but are not limited to bolts and the like. Any function, configuration, or mechanism that can electrically connect the power supply (connection) wiring 211 may be used, such as a screw, crimping fitting, insertion portion, insertion hole, or connector. The above applies not only to the power supply (connection) wiring 211, but also to other connection lines such as the signal wiring 203. These also have the mechanisms and configurations described in Figure 30(a) and the like to make the lengths of the connection lines equal.

[0277] 10 and 11, the flexible conductor 381 or the connecting fitting 386 in FIG. 30(b) is arranged below the semiconductor element module 117, etc., but the present invention is not limited to this. For example, it goes without saying that they may be arranged or placed above the semiconductor element module 117, etc. It goes without saying that the connecting fitting 386 may be arranged below the semiconductor element module 117, etc., and the flexible conductor 381 may be arranged above the semiconductor element module 117, etc.

[0278] It is preferable to place the flexible conductor 381 on a different upper or lower surface from the connecting metal fitting 386 connected to the adjacent element terminal 226 from the viewpoint of noise prevention or connection work.

[0279] The flexible conductor 381 has bendability and sliding properties. The flexible conductor 381 can bend in direction A or B. Therefore, even if fluctuations or vibrations occur in the test current Id flowing through the power supply (connection) wiring 211 and the flexible conductor 381, the vibrations and fluctuations can be absorbed.

[0280] In test equipment, the test current Id is large and is often supplied intermittently. Therefore, the test current Id generates an electromagnetic force, causing the power supply (connection) wiring 211 to vibrate. In particular, when currents of different directions flow through adjacent power supply (connection) wirings 211, the occurrence of vibration becomes more pronounced.

[0281] As shown in FIG. 29(b), by providing the flexible conductor 381 with sliding and spring properties, it is possible to absorb vibrations of the power supply (connection) wiring 211 and the connecting fitting 386, and the connection state with the element terminal 226 etc. is stabilized.

[0282] The semiconductor module 117 vibrates when the test current Id is turned on and off. The flexible conductor 381 passes under the semiconductor module 117 and is connected to the element terminal 226c at the left end of the semiconductor module 117. The connecting metal fitting 386a is connected to the element terminal 226a at the right end of the semiconductor module 117. The connecting metal fitting 386b is connected to the element terminal 226b at the right end of the semiconductor module 117. Therefore, the connecting metal fitting 386a, the connecting metal fitting 386b, and the flexible conductor 381 are all drawn out to the right. Therefore, even if vibration occurs in the semiconductor module 117, the connection with the element terminal 226 is maintained in a good state.

[0283] This also simplifies the process of connecting the flexible conductor 381 and the connecting fitting 386 to the element terminal 226. Furthermore, since the flexible conductor fitting 382a of the flexible conductor 381 is attached to the contact fitting 388c from the left with the screw 384a, the attachment process is also easy.

[0284] Since the flexible conductor 381 passes through the bottom side of the semiconductor module 117 and is not on the top side, there are no obstacles on the front side (front side) of the semiconductor module 117, making it easy to adjust the temperature. Also, it is less susceptible to the effects of noise flowing in the power supply (connection) wiring connected to the adjacent element terminals.

[0285] The flexible conductor 381 has excellent flexibility. Figure 29 (c1) shows an example in which a flat braided wire or the like is used for the flexible portion. Because a flat braided wire is used for the flexible portion, it can be attached in complex bends, twists, etc., making it easy to connect the element terminal 226 of the semiconductor module 117. It can be manufactured in a wide range of sizes, from small to large, in terms of both capacitance and terminal shape. Therefore, it is easy to change the flexible conductor 381 used depending on the magnitude of the test current Id. It is also possible to attach a shrink tube to the flat braided wire. It is also possible to manufacture specifications in which round terminals or the like are attached to both ends of the flat braided wire.

[0286] In Figure 29(c2), the flexible section may be made by stacking the required number of thin copper strips or copper foils, with flexible conductor fittings 382 joined to both ends for connection to mating terminals. Terminal joining methods include electron beam welding (KE type), argon welding (KW type), rivet crimping (KR type), and soldering (KS type). The standard copper strip thickness is 0.2 mm. Other copper strip thicknesses such as 0.05 mm, 0.1 mm, and 0.5 mm are also acceptable. A shield may be provided to mitigate the electric field.

[0287] The flexible conductor 381 is connected to a connector 386c by a screw 384c, etc. The connector 386c is fixed to a connector fixture 392c by a screw 384d. The connector fixture 392c is positioned and fixed to the mounting rail 385b by a screw 384e.

[0288] The connection fitting fixture 392c can move the mounting rail 385b in directions A and B. By moving the connection fitting fixture 392c, the flexible conductor 381 can be positioned on the element terminal 226c. Furthermore, the length of the flexible conductor 381 can be adjusted by the positions of the mounting holes 383b and screws 384c. After positioning in directions A or B, the flexible conductor 381 is fixed with screws 384e.

[0289] A wiring mounting bolt 391 for mounting the power supply (connection) wiring 211 and the like is disposed on the connecting fitting 386. A plurality of wiring mounting bolts 391 can be mounted. A plurality of connection bolts 219 are also disposed on the fork plug 205. A power supply (connection) wiring can be mounted on each wiring mounting bolt 391. For example, as shown in FIG. 10, a power supply (connection) wiring 211b1 is connected to the wiring mounting bolt 391a and the connection bolt 219a. A power supply (connection) wiring 211b2 is connected to the wiring mounting bolt 391b and the connection bolt 219b.

[0290] The fork plug 205 and the connector 386 are connected by a plurality of (power) wires 211. In semiconductor device testing equipment, the test current Id is large, at several hundred amperes (A). In order to reduce resistance loss at a large current, it is necessary to use thick power (connection) wires 211. Thick power (connection) wires 211 are difficult to bend mechanically, making connection difficult. By using a plurality of transparently thin power (connection) wires 211, the wires become easier to bend mechanically, facilitating connection wiring.

[0291] In the present invention, the screws 384, wiring mounting bolts 391, connection bolts 219, etc. are used or illustrated, but are not limited to these. The screws and bolts are mounting or connecting means, and it goes without saying that other means may be used. For example, they may be positioned with a pressure tool having a lever and fixed to the mounting rail 385. They may also be mounted by fitting.

[0292] A contact fitting 388a is placed on the element terminal 226a, and a connecting fitting 386a is fixed via the contact fitting 388a with a screw 384f. It goes without saying that the connecting fitting 386a may be attached to the element terminal 226a with the screw 384f without using the contact fitting 388a.

[0293] The connector 386a is fixed to a connector fixture 392a with a screw 384g, and the connector fixture 392a is positioned and fixed to the mounting rail 385a with a screw 384h. Since the connector fixture 392 is made of an insulating material, the connector fixture 386 and the mounting rail 385 are insulated from each other.

[0294] The connecting fitting fixture 392a can move the mounting rail 385a in directions A and B. This movement allows the connecting fitting 386a and contact fitting 388a to be positioned on the element terminal 226a. After positioning in direction A or B is confirmed, the fitting is fixed with the screw 384h.

[0295] A contact fitting 388b is placed on the element terminal 226b, and a connecting fitting 386b is fixed via the contact fitting 388b with a screw 384i. The hole diameter of the contact fitting 388b is formed larger than the diameter of the screw 384. Therefore, the contact fitting 388b can be moved to make a good connection with the element terminal 226.

[0296] It goes without saying that the connecting fitting 386 may be attached to the element terminal 226 with the screw 384 without using the contact fitting 388. In this case, by forming the hole diameter of the connecting fitting 386 larger than the diameter of the screw 384, the connecting fitting 386 can be moved to ensure a good connection to the element terminal 226.

[0297] The connector 386b is fixed to a connector fixture 392b with a screw 384j. The connector fixture 392b is positioned and fixed to the mounting rail 385a with a screw 384k.

[0298] The connecting fitting fixture 392b can move the mounting rail 385a in directions A and B. This movement allows the connecting fitting 386b and contact fitting 388b to be positioned on the element terminal 226b. After positioning in directions A or B is confirmed, the fitting is fixed with the screw 384k.

[0299] Connector fittings 386 (connection fittings 386a and 386b) are fixed to mounting rail 385a via connector fitting fixtures 392 (connection fitting fixtures 392a and 392b). Flexible conductor 381 is fixedly attached to mounting rail 385b via connector fitting fixture 392c. Connector fittings 386 (connection fittings 386a and 386b) and flexible conductor 381 are attached and fixed to a different mounting rail 385 from connector fitting 386c. A power supply (connection) wire 211 is attached to the connecting fitting 386. The power supply (connection) wire 211 vibrates or moves when the test current Id is turned on and off.

[0300] Although the flexible conductor 381 and the connecting fittings 386 (connecting fittings 386a and 386b) are adjacent to each other, the timing at which the test current Id flows often differs, and the flexible conductor 381 and the connecting fittings 386 (connecting fittings 386a and 386b) are fixed to different connecting fitting fixtures 392 (connecting fitting fixtures 392a and 392b). Therefore, they are less susceptible to the effects of vibrations of the power supply (connection) wiring 211. Therefore, the connection state with the element terminal 226 can be maintained in a good condition.

[0301] Furthermore, the power supply (connection) wiring 211 attached to the connecting metal 386c of the flexible conductor 381 and the power supply (connection) wiring 211 attached to the connecting fittings 386 (connection fittings 386a and 386b) have different insertion positions for the fork plug 205, and therefore different stresses are applied. By using different mounting rails 385 (mounting rails 385a and 385b), the mechanical fixation state can be improved or addressed. Furthermore, by using different mounting rails 385 (mounting rails 385a and 385b) for adjacent connecting fittings 386, the connection work can be made easier.

[0302] Signal terminals 225c1, 225g1, and 225e1 are arranged on a signal connection portion 227a of the semiconductor module 117. A connector 202a is connected to the signal connection portion 227a, and a signal line 203a is connected to the connector 202a.

[0303] The transistor 117m is connected to the control measurement circuit 133a, and the transistor 117s is connected to the control measurement circuit 133b. The signal terminal 225g is connected to the gate driver circuit 113 or the resistor circuit 125. The signal terminals 225c and 225e are connected to the inter-terminal voltage output circuit (such as a buffer amplifier) ​​116. The constant current circuit 118 is connected to the signal terminals 225c and 225e of the transistor 117.

[0304] Figure 30(a) shows a configuration in which a power supply (connection) wire 211 is attached to the wire mounting bolt 391 of Figure 28, and a fork plug 205 is connected to one end of the power supply (connection) wire 211. The fork plug 205 is inserted into an opening 216. In Figure 30, the fork plug 205 and the wire mounting bolt 391 are shown as connecting one power supply (connection) wire 211, but this is not limited to this.

[0305] As shown in Figure 30(b), it is preferable that the connecting fitting 386 has sliding or spring properties and is configured to bend in directions A and B. When force is applied to the power supply (connection) wiring 211 attached to the wiring mounting bolt 391, the connection with the element terminal 226 may become unstable. By making the connecting fitting 386 sliding, fluctuations can be absorbed at the connecting fitting 386 portion, and tight adhesion with the element terminal 226 is ensured. For example, by configuring the connecting fitting 386 from a copper plate (e.g., phosphor bronze) with a thickness of 2 mm or less, the copper plate can bend in directions A or B to absorb pressure, etc.

[0306] In testing equipment, the test current Id is large and is often supplied intermittently. Therefore, the test current Id generates an electromagnetic force, causing the connection fitting 386 and the power (connection) wiring 211 to vibrate. By providing the connection fitting 386 with sliding and spring properties as shown in Figure 30(b), the vibrations and fluctuations can be absorbed, and the connection state with the element terminal 226, etc., is stabilized.

[0307] It is preferable to connect the wiring mounting bolt 391b and the connection bolt 219a with the power supply (connection) wiring 211, and to connect the wiring mounting bolt 391a and the connection bolt 219b with the power supply (connection) wiring 211, using two or more power supply (connection) wirings 211.

[0308] As shown in Figure 30, the power supply (connection) wiring is connected to the fork plug 205 in the opening 216 at the left side position. The power supply (connection) wiring from the element terminal 226 is wired in one direction. Therefore, the area in which the power supply (connection) wirings 211 are arranged close to each other can be reduced, and noise superposition between adjacent power supply (connection) wirings 211 can be suppressed. Furthermore, because the power supply (connection) wirings 211 are arranged in the position direction, the work of attaching the fork plug 205 and the work of inserting it into the opening 216 are also easy.

[0309] 28, 29, 30(a), etc. are explanatory diagrams of an embodiment configured using a flexible conductor 381. The semiconductor testing device of the present invention is not limited to using the flexible conductor 381.

[0310] 30(b) shows an embodiment in which flexible conductor 381 is made up of connecting fittings 386c1 and 386c2. The bent portion of flexible conductor 381 is formed by fastening connecting fittings 386c1 and 386c2 with screws 384p, forming a 90° bent portion.

[0311] The connecting fitting 386c1 and the contact fitting 388 are fixed with a screw 384a, similar to the flexible conductor 381. The connecting fitting 386c1 has sliding and spring properties. Therefore, as shown in Figure 30(b), it can move, fluctuate, and bend in directions A and B. The connecting fitting 386c2 is fixed to the connecting fitting fixture 392c with a screw 384c. The power (connection) wiring 211 is connected to the wiring mounting bolt 391. The temperature sensor 316 is placed or attached near the wiring mounting bolt 391.

[0312] The connecting fitting 386c2 is constructed or formed from a thin, bendable copper plate or the like, allowing the connecting fitting 386c2 to bend in the A or B direction. Therefore, even if fluctuations or vibrations occur in the power (connection) wiring 211, the fluctuations can be absorbed. In test equipment, the test current Id is large and is often supplied intermittently. Therefore, the test current Id generates an electromagnetic force, causing the power (connection) wiring 211 to vibrate. In particular, when currents of different directions flow through adjacent power (connection) wirings 211, the vibrations become more pronounced. By providing the connecting fitting 386 with sliding and spring properties, as shown in FIG. 30(b), the vibrations of the power (connection) wiring 211 and the connecting fitting 386 can be absorbed, stabilizing the connection and adhesion between the power (connection) wiring 211 and the element terminal 226. Therefore, changes in the connection resistance with the element terminal 226 can be prevented. It goes without saying that the connecting metal fitting 386 and the flexible conductor 381 may be directly connected to the element terminal 226 without using the contact metal fitting 388 .

[0313] It goes without saying that the above points also apply to the connecting fittings 386a and 386b. Furthermore, it is preferable to provide a mechanism for fixing and supporting the power supply (connection) wiring 211 at its middle portion to prevent vibration and shaking.

[0314] 31 is a configuration diagram showing, as an example, three semiconductor modules 117 (semiconductor module 117a, semiconductor module 117b, semiconductor module 117c) arranged in a dry air injection (filling) container 208. Note that the dry air injection (filling) container 208 may not be a container, but may be a dry air injection (filling) chamber 208.

[0315] A dry air pipe 303 is installed and disposed in the dry air injection (filling) container 208. Dry air is injected from the dry air pipe 303a, and dry air or air is discharged from the dry air pipe 303b.

[0316] The dry air pipe 303 is a pipe for supplying dry air 306 maintained at a predetermined relative humidity or lower. The dew point temperature of the dry air generated by the dry air generator 302 is set. Argon, nitrogen, or the like may be used as the dry air. Alternatively, nitrogen may be used as dry air from a nitrogen cylinder and injected into the dry air injection (filling) container 208 without using the dry air generator 302. The dry air injection (filling) container 208 is a container for temporarily filling with the dry air 306 and does not necessarily need to be airtight. If the environment in which the semiconductor module 117 is used comes into contact with gases other than air, such as carbon dioxide or hydrogen, the dry air injection (filling) container 208 is filled with a gas suitable for the environment, such as carbon dioxide, sulfur dioxide, or hydrogen.

[0317] If the dry air 306 hits the semiconductor module 117 directly, it will affect the internal temperature of the semiconductor module 117. The temperature sensor 316 attached to the semiconductor module 117 will no longer indicate the temperature of the semiconductor module 117. Furthermore, if the dry air 306 hits the thermo-hygrometer 304 directly, it will cause an error in the measurement value. Therefore, it is preferable that the dry air 306 be blown upward. The blowing direction of the dry air 306 may be any direction as long as it is different from the direction in which the semiconductor module 117 and the thermo-hygrometer 304 are located. It is preferable that the thermo-hygrometer 304 is located on the discharge side of the dry air 306.

[0318] The electromagnetic lock 307 can lock the closed dry air injection (filling) container (chamber) 208 to prevent it from being opened. The dry air injection (filling) container (chamber) 208 is provided with a drain groove 507, an outlet 508, a liquid leakage sensor 512, and an alarm 509. The drain outlet 508 is a mechanism for preventing the coolant from leaking into the electric circuits and the like at the bottom of the housing.

[0319] Drain groove 507 is formed along the inner circumference of the lower end of dry air injection (filling) container (chamber) 208. Also, dry air pipe 303, thermo-hygrometer 304, and electromagnetic lock 307 are arranged inside dry air injection (filling) container (chamber) 208. If cooling water leaks, it is discharged from drain outlet 508.

[0320] The liquid leakage sensor 512 is a sensor for detecting leaked coolant, for example, by an inter-electrode resistance detection method. The liquid leakage sensor 512 is disposed inside the dry air injection (filling) container (chamber) 208, and has an amplifier (not shown) and a band-shaped detection band (not shown). The detection band is connected to the amplifier, and one end is connected to a terminator (not shown).

[0321] 11, the connecting fitting 386 and the fork plug 205 are connected by a power (connection) wiring 211. The fork plug 205 is inserted through an opening 216 formed or configured in the partition wall 214, and is fitted and connected to the conductive plate 204.

[0322] Conductive plates 204d, 204c, and switch circuit 124a are mounted or arranged on switch circuit board 201b. Fork plug 205e is fitted or connected to conductor plate 204d to form a current path. Fork plug 205d is fitted or connected to conductor plate 204c to form a current path. The test circuit can be changed by changing the conductor plate 204 connected to fork plug 205.

[0323] The partition wall 214 functions as a member that supports the fork plug 205. The opening 216 of the partition wall 214 positions the fork plug 205 and holds it so that it does not shift out of position. Therefore, the opening 216 may be configured as a frame or the like. Furthermore, the partition wall 214 does not only have a partitioning function.

[0324] It is a portion or configuration for positioning a connecting member (connecting part) such as fork plug 205d. Furthermore, partition wall 214 is a member in which opening 216 is formed, and does not mean a wall, a partition plate, or the like.

[0325] 10, fork plug 205e is connected to connecting fitting 386a by power supply (connection) wires 211b1 and 211b2. By using multiple power supply (connection) wires 211, the thickness of power supply (connection) wires 211 can be reduced, making it easier to position fork plug 205 and insert it into opening 216. The same applies to the other fork plugs 205.

[0326] The fork plug 205d is inserted into the opening 216 of the partition wall 215. The fork plug 205d is fitted or joined to the conductive plate 204c, and is held and supported by the opening 216 of the partition wall 215.

[0327] 1, 3, 12, and 13, a semiconductor module 117 to be tested (evaluated) is placed and installed at one end of the upper side (room C1: upper left side in the embodiment of FIG. 2) of a housing (testing device) 210. A switch circuit board 201 is placed and installed at one end of the lower side (room B: lower right side in the embodiment of FIG. 2) of the housing (testing device) 210.

[0328] When the configuration of the test device in the embodiment of FIG. 1 is as shown in FIG. 3, the switch circuit board 201c, the switch circuit board 201a, etc. are omitted in FIG.

[0329] Fork plug 205d is inserted from chamber A on the lower side through opening (insertion portion) 216 of partition wall 215 and connected to conductive plate 204c. Fork plug 205e and fork plug 205c are inserted from chamber C2 through opening (insertion portion) 216 of partition wall 214 and connected to conductive plate 204d and conductive plate 204c.

[0330] In the present invention, it is expressed and explained that a connecting member (connecting part) such as fork plug 205 is inserted into opening 216 of partition wall 212, partition wall 215, and partition wall 214, but the present invention is not limited to this. The partition wall and the inserting part are members and components that position a connecting member (connecting part) such as fork plug 205, and also members and components that maintain or support a connecting member (connecting part) such as fork plug 205.

[0331] Therefore, the partition is not limited to a plate, a partition board, a wall, etc. For example, it may be a mesh, a frame, a support, a rubber sheet, a resin sheet, etc. Furthermore, opening 216 is not limited to a hole, and may have any configuration, arrangement, shape, material, substance, or structure as long as it is configured to at least allow a connecting member (connecting part) such as fork plug 205 to be inserted, held, supported, or arranged.

[0332] For example, the configuration or arrangement shown in Fig. 11(b) may be used. As shown in Fig. 11(b1), a flexible sheet (rubber sheet, deformable member, flexible member) 221 having a cut portion (insertion portion) 222 is arranged or formed in the opening 216 of the partition wall 214. Fig. 11(b2) is a cross-sectional view taken along line AA' in Fig. 11(b1).

[0333] As shown in FIG. 11(b3), a connecting member 205 such as a fork plug 205 is inserted into the notch (insertion portion) 222, and is fitted or connected to a connecting target member such as a conductive plate 204.

[0334] 11(b), the opening 216 is closed by a rubber sheet 221. This improves the sealing performance of the C2 chamber and the like. In addition, water leakage into the B chamber can be suppressed.

[0335] In the embodiment of Fig. 3, fork plug 205e is electrically connected to collector element terminal 226a of transistor 117s. Fork plug 205g is electrically connected to emitter element terminal 226c (collector terminal of transistor 117m) of transistor 117s. Although not shown in Fig. 3, fork plug 205c is electrically connected to emitter terminal 226b of transistor 117m.

[0336] A plurality of switch circuits 124 are arranged or mounted on switch circuit board 201. The more switch circuits 124 there are, the lower the impedance can be when switch circuit 124 is turned on, and the better the characteristics during discharge, connection, etc. In Figure 3, switch circuit 124a1 and switch circuit 124a2 are shown on switch circuit board 201b.

[0337] 1, when switch circuit (switch, discharge circuit) 124b of switch circuit board 201a is turned on (closed), conductor plates 204a and 204b are short-circuited, the output terminals of power supply circuit 132 are short-circuited, and electric charge is discharged. When switch circuit 124a is on, switch circuit 124b is turned on, and electric charge is discharged between element terminals 226a and 226b of semiconductor module 117. By discharging, it is possible to suppress the occurrence of transient voltages and transient currents, and to prevent or suppress deterioration of transistor 117 being tested or evaluated due to these.

[0338] When the switch circuit 124a of the switch circuit board 201b is turned on (closed), the conductor plates 204c and 204d are short-circuited, and the test current Id and test voltage Vd of the power supply circuit 132 are applied to the element terminal 226a of the semiconductor module 117.

[0339] When applying the test current Id to the element terminals 226a and 226c, the switch circuit 124b is first turned on to discharge the charge between the element terminals 226 of the semiconductor module. After that, the switch circuits 124a, 124c, etc. are turned on, and then the switch circuit 124b is turned off.

[0340] 38, etc., switch circuit 124b is first turned on to discharge the charge between element terminals 226 of the semiconductor module. After that, switch circuit 124a, switch circuit 124c, etc. are turned off, and then switch circuit 124b is turned off.

[0341] When the switch circuit 124c of the switch circuit board 201c is turned on (closed), the conductor plates 204g and 204f are short-circuited, and the test current Id and test voltage Vd of the power supply circuit 132 are applied to the element terminal 226c of the semiconductor module 117.

[0342] The element terminal 226 of the semiconductor module 117 to which the test current Id is applied can be selected by turning on or off the switch circuit 124a of the switch circuit board 201b and the switch circuit 124c of the switch circuit board 201c.

[0343] FIG. 12 is a schematic (configuration) diagram looking toward chamber B from chamber C2 in FIG. 3. A switch circuit board 201 is disposed in chamber B. A conductor plate 204 is mounted or disposed on switch circuit board 201. Conductive plate 204 is disposed to protrude from switch circuit board 201 (printed circuit board). Conductive plates 204a, 204b, and switch circuit board 201d are disposed to protrude from conductor plate 204 by length L1. Conductive plates 204c and 204e are disposed to protrude from conductor plate 204 by length L2. Fork plugs 205 and the like are connected to the portions of length L1 and length L2 for electrical connection. As shown in FIG. 12, the present invention has multiple openings 216 for each position of conductor plate 204. Furthermore, for each position of conductor plate 204, there are multiple openings 216 into which multiple fork plugs 205 can be inserted. 26, the conductor plate 204 is configured so that fork plugs 205 can be connected to the left and right sides of the conductor plate 204. Note that, like the conductor plate 204h shown in FIG. 21 and the conductor plate 204a shown in FIG. 13, the conductor plate 204h may be arranged independently (not attached to the switch circuit board 201), and an opening 216 may be arranged corresponding to the position of the conductor plate 204h.

[0344] 12 shows that the opening 216 is formed in the partition wall 214, but this is not limiting. For example, a support frame may be formed or placed around the periphery of the opening 216, and the fork plug 205d or the like may be held by this support frame. Note that if the support state is stabilized by the fit between the fork plug 205 and the conductive plate 204, it is not necessary to adopt a configuration in which the opening 216 is formed in the partition wall 214. For example, the partition wall 214 may be unnecessary (and, naturally, the opening 216 is not necessary either).

[0345] As shown in Fig. 12, the shape of the opening 216 can be exemplified by a shape in which one opening 216 corresponds to one fork plug 205, or a shape in which multiple fork plugs 205 correspond to one opening 216. In Fig. 12, openings 216a1 and 216a2 are formed with an opening area that allows multiple fork plugs 205 to be inserted. The other openings 216 are formed with an area that allows one fork plug 205 to be inserted. By inserting the fork plug 205 into the opening 216, the fork plug 205 is fitted with the conductive plate 204 arranged in chamber B.

[0346] Fig. 13 is a schematic diagram illustrating the connection state between conductive plate 204 and fork plug 205. In Fig. 13, fork plug 205a1 and fork plug 205a2 are inserted into opening 216a1, and conductive plate 204a is fitted with fork plug 205a1 and fork plug 205a2. Fork plug 205a3 is inserted into opening 216a2, and conductive plate 204a is fitted with fork plug 205a3.

[0347] Therefore, fork plug 205a1, fork plug 205a2, and fork plug 205a3 are commonly connected (short-circuited) via conductor plate 204a. Conductive plate 204a is not mounted on the switch circuit board, and has the function of commonly connecting multiple fork plugs 205.

[0348] As described above, the conductor plate 204 of the present invention not only has a configuration in which the switch circuit 124 is connected, but also has a function of electrically connecting connecting members such as the fork plug 205 in common using the conductor plate 204. The conductor plate 204 is placed in chamber B and can be used to short-circuit the connecting members 205 (such as the fork plug 205) inserted from the opening 216. In FIG. 13, the fork plug 205b1 is inserted into the opening 216b1 and fitted with the conductive plate 204b.

[0349] Fork plug 205b1 is inserted into opening 216b1 and fitted with conductive plate 204b. Fork plug 205b2 is inserted into opening 216b2 and fitted with conductive plate 204b. Fork plug 205b3 is inserted into opening 216b3 and fitted with conductive plate 204b. Therefore, fork plug 205b1, fork plug 205b2, and fork plug 205b3 are electrically connected in common to conductive plate 204b. The fork plug 205d1 is inserted into the opening 216d1 and fitted with the conductive plate 204d.

[0350] The fork plug 205d3 is inserted into the opening 216d3 and fitted with the conductive plate 204d, so that the conductive plate 204d is electrically connected to the fork plug 205d1 and the fork plug 205d3 in common. The fork plug 205d1 is inserted into the opening 216e1 and fitted with the conductive plate 204e.

[0351] The fork plug 205d2 is inserted into the opening 216e2 and fitted with the conductive plate 204e, so that the conductive plate 204e is electrically connected to the fork plug 205e1 and the fork plug 205e2 in common.

[0352] The fork plug 205 is mounted on the corresponding switch circuit board 201 by selecting any opening 216 and fitting it into the conductor plate 204 of a specified switch circuit board 201, and can supply or stop the test current Id, etc. by controlling the on / off of the switch circuit 124.

[0353] Furthermore, by connecting the fork plugs 205 to a common conductor plate 204, as in the case of conductor plate 204a, it is possible to set each fork plug 205 to the same potential, for example, the ground potential, earth potential, or power supply voltage potential.

[0354] Fig. 14 is an explanatory diagram regarding the connection from chamber A to chamber B in Fig. 3. As shown in Fig. 3 and Fig. 14, an opening 216 is arranged so that the conductor plate 204c arranged or mounted on the switch circuit board 201 can be connected to the fork plug 205 or the like.

[0355] The partition wall 215 is a member formed with openings 216 into which connecting members such as a plurality of fork plugs 205 are inserted. The conductive plate 204 is disposed at a location corresponding to the opening 216. The partition wall 215 is fitted with the conductive plate 204 and is held by the wall surface of the opening 216 or the like to prevent the fork plug 205 from shifting position. The opening 216 is designed to prevent the conductive plate 204 from shifting position. The partition wall 215 functions as a holding portion, a supporting portion, and a fixing portion for the fork plug 205.

[0356] If a first fork plug 205 is connected to the left end of one conductor plate 204 and a second fork plug 205 is connected to the right end of the other conductor plate, the first fork plug 205 and the second fork plug 205 are connected using the conductor plate 204 as an electrical circuit. Because the conductor plate 204 is used as an electrical circuit, it is easy to connect and change the test circuit and power supply (connection) wiring.

[0357] In the embodiment of Figure 14, fork plug 205a is inserted into opening 216a, and fork plug 205a is fitted or connected to conductive plate 204a. Fork plug 205b is inserted into opening 216b, and fork plug 205b is fitted or connected to conductive plate 204b. Fork plug 205c is inserted into opening 216c, and fork plug 205c is fitted or connected to conductive plate 204c. Fork plug 205d is inserted into opening 216d, and fork plug 205d is fitted or connected to conductive plate 204d. Fork plug 205e is inserted into opening 216e, and fork plug 205e is fitted or connected to conductive plate 204e.

[0358] By selecting a specific conductor plate 204 from any opening 216 and connecting a fork plug 205, the test current Id can be applied, or the conductor plate 204 can be grounded to earth potential or connected to a power supply voltage by turning on and off the switch circuit 124 of the switch circuit board 201 on which the conductor plate 204 is mounted.

[0359] The fork plug 205 is provided with a plurality of connection bolts 219. A power supply (connection) wire 211 and the like are connected to each connection bolt 219. By connecting a plurality of power supply (connection) wires 211 to one fork plug 205, it is possible to use a relatively thin power supply (connection) wire 211. This makes it easier to handle the fork plug 205. Furthermore, it is easy to connect a test circuit and change the wiring.

[0360] The fork plug 205 is held by the conductor plate 204 and the partition wall 215, and is maintained without misalignment. The length of the fork plug 205 inserted from the chamber A side is configured to be shorter than the fork plug 205 inserted from the C2 side. The length of the fork plug 205 inserted from the chamber A side is configured to be different from the fork plug 205 inserted from the C2 side. The distance from the chamber C2 to the conductor plate 204 in the chamber B is 12 to 25 cm. Therefore, a certain length of the fork plug 205 is required to fit the fork plug 205 and the conductor plate 204. The conductor plate 204 in the chamber B is mounted horizontally, and the fork plug 205 is fitted from the lateral direction of the conductor plate 204 in the chamber A. Therefore, the length of the fork plug 205 may be 5 to 15 cm.

[0361] The fork plug (connection member, connection tool) 205 can be easily changed by selecting an opening 216 and inserting it through the selected opening 216. In a power cycle test, the test current Id is large, and therefore the (power supply) wiring to be connected is thick. Thick wiring is difficult to bend and heavy, making it difficult to change the connection by fastening with screws. In the present invention, the fork plug (connection member, connection tool) 205 and the conductor plate 204 are fitted together to change the connection.

[0362] Therefore, the fork plug 205 is not limited to being connected to the conductor plate 204 of the switch circuit board 201, but may be configured, for example, so that the conductor plate 204 is arranged or mounted on the controller circuit board 111, the mother board 207, or the device control board 209, and these conductor plates 204 and the fork plug 205 can be connected.

[0363] 15 to 18, the semiconductor module 117 to be tested and the test stand 505 are placed at the left end (first end side of the test housing: chamber C1), and an opening 216 for inserting the fork plug 205 is placed and formed on the opposite side of the first end side of the test housing (second end side: chamber C2). In addition, the switch circuit board 201 and the controller circuit 111 are placed in chamber B below the opening 216. Therefore, the power supply (connection) wiring 211 connecting the semiconductor module 117 and the fork plug 205 is wired in one direction, from chamber C1 side to chamber C2 side.

[0364] 11, the power supply (connection) wiring 211c passes through the back surface of the semiconductor module 117 and is connected to the element terminal 226c at the left end of the semiconductor module 117. The power supply (connection) wiring 211a or the power supply (connection) wiring 211b is connected to the element terminal 226a or the element terminal 226b at the right end of the semiconductor module 117.

[0365] Therefore, the power supply (connection) wiring 211 is arranged to the left of the semiconductor module 117. In other words, the connection wiring to the opening 216 is unidirectional, from left to right. By arranging the power supply (connection) wiring 211 in one direction, even if the power supply (connection) wiring 211 is thick, wiring connections and wiring changes become easy. In addition, wiring layout design becomes easier. The cost of the power supply (connection) wiring 211 also becomes cheaper.

[0366] 34, by sliding upper housing 502, housing 502 can be removed from above opening 216, facilitating the work of inserting fork plug 205 into opening 216. Therefore, the position of conductive plate 204 can be confirmed from the top surface of opening 216, and the work of connecting fork plug 205 can be performed.

[0367] A semiconductor element 117 to be tested is placed in the upper left of the test equipment 210. The left-end terminal of the semiconductor element 117 is connected from the back side of the semiconductor element using a flexible conductor 381. A fork plug 205 is connected to the end of the power supply (connection) wiring 211. An opening 216 is placed on the right side of the test equipment 210, and a switch circuit board 201 is placed at the lower right as a test circuit.

[0368] The fork plug 205 is inserted through the opening 216 and engages with the conductor plate 204 of the switch circuit board 201. The upper housing 502 of the test device 210 can be moved, and by moving the upper housing 502, the opening 216 into which the fork plug 205 is inserted can be opened.

[0369] As shown in FIG. 15 and other figures, the power supply (connection) wiring 211 passes over the mounting rails 385a and 385b, passes through the partition wall 212, and is connected to the switch circuit board 201 and other components arranged on one side of the housing 210.

[0370] 15, the conductor plates 204s and 204m are not attached to the switch circuit board 201. They are independently placed or installed in room B. However, it goes without saying that the conductor plates 204s and 204m may be placed, installed, or mounted on the switch circuit board 201.

[0371] Conductive plate 204s is connected to the positive side (output side of test current Id and test voltage Vd) of power supply device 132. Conductive plate 204m is connected to the negative side (ground side) of power supply device 132. By fitting fork plug 205 into conductive plate 204s, it is possible to apply test current Id or test voltage Vd to fork plug 205. By fitting fork plug 205 into conductive plate 204m, it is possible to set fork plug 205 to ground potential.

[0372] It is also possible to attach a plurality of fork plugs 205 (for example, fork plug 205a and fork plug 205b) to one element terminal 226, and to mate the fork plug 205a and the fork plug 205b with different conductive plates 204. With the above configuration, a wide variety of test circuits can be configured.

[0373] By connecting multiple fork plugs 205 to conductor plate 204m or conductor plate 204s, the multiple fork plugs 205 can be easily electrically connected in common. Also, by selecting conductor plate 204m or conductor plate 204s and connecting the fork plug 205, the fork plug 205 can be pulled up to the power supply voltage or pulled down to the ground.

[0374] 15, the power terminal of power supply device 132 is directly connected to conductor plate 204s. Also, the ground terminal of power supply device 132 is directly connected to conductor plate 204m. Needless to say, conductor plates 204s and 204m may be connected using fork plug 205.

[0375] A fork plug 205a is connected to one terminal of a switch circuit 124b of a switch circuit board 201b. A fork plug 205b is connected to the other terminal of the switch circuit 124b. The fork plug 205a is fitted with a conductor plate 204s, and the fork plug 205b is fitted with a conductor plate 204m. When the switch circuit 124a is turned on, the output terminals of the power supply device 132 are short-circuited. The short-circuit allows the accumulated electric charge to be discharged.

[0376] 1 and 15, a fork plug 205d is connected to the power supply device 132, and the fork plug 205d is fitted with the conductor plate 204c of the switch circuit board 201b. Also, a fork plug 205d is connected to the power supply device 132, and the fork plug 205d is fitted with the conductor plate 204c of the switch circuit board 201b.

[0377] Switch circuit boards 201b and 201c are arranged in room B. Conductive plates 204c and 204d are mounted and arranged on switch circuit board 201b. The partition wall 214 where the conductive plate 204s is located has horizontally elongated openings 216a formed or arranged therein so that a plurality of fork plugs 205 can be inserted. In the partition wall 214 where the conductive plate 204m is located, a horizontally elongated opening 216d is formed or arranged so that a plurality of fork plugs 205 can be inserted.

[0378] An opening 216b1 is formed or disposed on the left side of the partition wall 214 where the switch circuit board 201b is located, and an opening 216b2 is formed or disposed on the right side.

[0379] A fork plug 205e is connected to the element terminal 226a of the semiconductor module 117. The fork plug 205e is inserted into the opening 216b1, and the fork plug 205e is fitted or connected to the conductive plate 204d.

[0380] A fork plug 205d connected to the output terminal of the power supply device 132 for the test current Id is connected to the conductor plate 204c of the switch circuit board 201b, and the fork plug 205d is inserted and connected through the opening 216b2.

[0381] When the switch circuit 124a of the switch circuit board 201b is turned on (closed), the test current Id or test voltage Vd applied to the conductor plate 204c is applied to the conductor plate 204d, and is applied or supplied to the element terminal 226a of the semiconductor module 117 via the fork plug 205e. A fork plug 205g is connected to the element terminal 226c of the semiconductor module 117. The fork plug 205g is inserted into the opening 216c1, and the fork plug 205g is fitted or connected to the conductive plate 204g.

[0382] A fork plug 205f connected to the output terminal of the test current Id of the power supply device 132 is connected to the conductor plate 204f of the switch circuit board 201c. The fork plug 205f is inserted into the opening 216c2 for connection.

[0383] When the switch circuit 124c of the switch circuit board 201c is turned on (closed), the test current Id or test voltage Vd applied to the conductor plate 204f is applied to the conductor plate 204g, and is applied or supplied to the element terminal 226c of the semiconductor module 117 via the fork plug 205g.

[0384] A fork plug 205c is connected to an element terminal 226c of the semiconductor module 117. The fork plug 205c is inserted through the opening 216d and connected to the conductor plate 204m. The fork plug 205c and the fork plug 205b are connected to the conductor plate 204m. Therefore, the fork plug 205c and the fork plug 205b are connected to the earth potential with the conductor plate 204m as an electric path.

[0385] 16 is an explanatory diagram of a semiconductor device testing apparatus according to the present invention. A fork plug 205a is connected to one terminal of a switch circuit 124b on a switch circuit board 201a. The fork plug 205a is connected to a conductor plate 204c. The conductor plate 204c is connected to output terminals of a power supply device 132 for a test current Id and a test voltage Vd.

[0386] In the switch circuit 124b of the switch circuit board 201a, a fork plug 205b is connected to the other terminal. The fork plug 205b is connected to a conductor plate 204f. The conductor plate 204f is connected to the ground potential.

[0387] Conductive plate 204c is connected to the output terminal of test current Id, and conductive plate 204f is connected to the ground potential. Therefore, when switch circuit 124b of switch circuit board 201a is turned on, the output terminals of power supply device 132 are short-circuited, and electric charge is discharged. Furthermore, when switch circuit 124a of switch circuit board 201b is turned on and switch circuit 124c of switch circuit board 201c is in the on state, electric charge is discharged between element terminal 226a and element terminal 226c of transistor 117b. The element terminal 226b of the semiconductor element module 117 is connected to the conductor plate 204. The conductor plate 204 is connected to the earth potential.

[0388] By applying an on-voltage as the gate signal Vgs2 to the gate terminal of transistor 117s, applying an on-voltage as the gate signal Vgs1 to the gate terminal of transistor 117sm, turning on the switch circuit 124a, and turning off the switch circuit 124c, a test can be performed in which the test current Id flows between the channels of transistor 117s and transistor 117m.

[0389] By applying an on-voltage as gate signal Vgs2 to the gate terminal of transistor 117s, applying an off-voltage as gate signal Vgs1 to the gate terminal of transistor 117sm, and turning on switch circuit 124a and switch circuit 124c, a test can be performed in which test current Id flows between the channels of transistor 117s. As described above, the transistor 117 to be tested can be changed by changing opening 216 into which fork plug 205 is inserted.

[0390] The test circuit connection can be easily changed by controlling the position of the fork plug 205 inserted into the opening 216 and the on / off state of the switch circuit 124 of the switch circuit board 201, thereby easily changing the test of the semiconductor module 117. FIG. 17 is an explanatory diagram of a semiconductor device testing apparatus and a semiconductor device testing method according to another embodiment.

[0391] 17, a voltage / current output terminal of the power supply device 132 is connected to the conductor plate 204s. The fork plugs 205e, 205g, and 205a are fitted or connected to the conductor plate 204s. Therefore, the element terminals 226c and 226a of the semiconductor module 117 are set to the output voltage of the power supply device 132.

[0392] The conductive plate 204m is connected to the earth potential of the power supply device 132. The fork plug 205c and the fork plug 205b are fitted or connected to the conductive plate 204m. Therefore, the element terminal 226b of the semiconductor module 117 is set to the earth voltage of the power supply device 132.

[0393] When the switch circuit 124b of the switch circuit board 201a is turned on, the output terminals of the power supply device 132 are short-circuited, and the electric charge can be discharged. In addition, the electric charge can be discharged between the element terminal 226a (element terminal 226c) and the element terminal 226b of the semiconductor module.

[0394] By arranging the first switch circuit 124 between the element terminal 226a and the element terminal 226c, and the second switch circuit 124 between the element terminal 226b and the element terminal 226c, the charge between the channels of the transistor 117s and the transistor 117m can be discharged independently.

[0395] A test voltage Vd and a test current Id from the power supply device 132 can be applied to the element terminal 226c, and the transistor 117m can be tested by controlling the on / off of a gate signal Vgs1 to the gate terminal of the transistor 117m. FIG. 18 is an explanatory diagram of a semiconductor device testing apparatus and a semiconductor device testing method according to another embodiment.

[0396] 18, fork plug 205g, fork plug 205c, and fork plug 205b are fitted or connected to conductive plate 204m, and therefore fork plug 205g, fork plug 205c, and fork plug 205b are set to the earth potential.

[0397] The fork plug 205d is connected to the fork plug 205e, which is connected to the element terminal 226a. Therefore, when the switch circuit 124a of the switch circuit board 201b is turned on, the test current Id of the power supply device 132 is applied and supplied to the element terminal 226a. Because the element terminal 226c is connected to the ground potential, an on / off signal is applied to the gate signal Vgs2 of the transistor 117s, thereby performing a test in which the test current of the transistor 117s is turned on and off.

[0398] 25, a connector 213 is attached to a motherboard 207. A controller circuit board 111, a device control board 209, and a switch circuit board 201 are attached to the connector of the motherboard 207. The number of switch circuit boards 201 is prepared in proportion to the number of transistors 117 to be tested or the number of transistors 117.

[0399] The number of switch circuit boards 201 can be easily changed by changing the number of switch circuit boards 201 attached to the mother board 207. Furthermore, in the event of a malfunction, testing can be continued simply by replacing the switch circuit board 201. Address designation switches 311 are arranged or mounted on the switch circuit board 201. By setting the address designation switches 311, it is possible to specify which semiconductor module 117 each switch circuit board 201 corresponds to.

[0400] A conductor plate 204 is attached to the switch circuit board 201. The conductor plate 204 is connected or fitted to a fork plug 205. The conductor plate 204 may be formed or configured using the copper foil that forms the switch circuit board 201.

[0401] An address designation switch 312 is arranged on the device control board 209, and an address designation switch 311 is arranged on the switch circuit board 201, and the address (number) of the circuit board is assigned. The controller circuit board 111 reads the addresses (numbers) of the address designation switch 311 and address designation switch 312, and associates them with the semiconductor module 117 to be tested. The controller circuit board 111 also associates the device control board 209 with the semiconductor module 117 and the switch circuit board 201.

[0402] 26, fork plug 205 is connected to the portion of conductor plate 204 that extends beyond the width of switch circuit board 201. Conductive plate 204 is configured to be longer than switch circuit board 201. Therefore, fork plug 205 can be easily connected to portions A and B of conductor plate 204. Fork plug 205 that contacts portions A and B is inserted from chamber C2 and chamber A through opening 216.

[0403] 26, an address designation switch 311 is arranged on the switch circuit board 201, and an address designation switch 312 is arranged on the device control board 209. The address (number) set by the address designation switch 311 on the switch circuit board 201 and the address (number) set by the address designation switch 312 on the device control board 209 are sent to the controller circuit board 111 via the connector 213 and the signal line of the mother board 207.

[0404] The electrical element testing apparatus of the present invention can test a plurality of electrical elements (electronic elements, semiconductor elements) simultaneously or sequentially. A device control board 209 and a switch circuit 124 are arranged corresponding to each electrical element (electronic element, semiconductor element). An address (number) is set on the switch circuit board 201 by an address designation switch 311, and the address (number) is set by the device control board 209.

[0405] By setting addresses (numbers) on the device control board 209 and the switch circuit board 201 using the address designation switch 311 and the address designation switch 312, the controller circuit 111 can be linked to the electrical element (electronic element, semiconductor element) to be tested.

[0406] Connector 315 shown in Fig. 27 is a connector for connecting thermocouple 314. A variety of thermocouples can be used as thermocouple 314, such as T-type thermocouple, J-type thermocouple, E-type thermocouple, and K-type thermocouple. The type of thermocouple 314 being used is set by function designation switch 313. The controller reads the data (type of thermocouple) set by function designation switch 313, refers to the electromotive force-temperature table corresponding to the type of thermocouple, and determines the temperature of semiconductor module 117 to be tested.

[0407] Thermocouple 314 is attached to the package of semiconductor module 117. Temperature information Tc can be obtained by thermocouple 314. Also, connector 315 has a function of determining whether thermocouple 314 is attached based on the magnitude of the voltage generated in connector 315 and the presence or absence of voltage.

[0408] The controller circuit 111 has the function of reading the addresses (numbers) of the address designation switches 312 and 311, and determining or detecting the number, position, and connection or non-connection of the semiconductor modules 117 to be tested or undergoing testing.

[0409] 25 shows four switch circuit boards 201, but the number is not limited to this. A plurality of switch circuit boards 201 may be required depending on the number of transistors 117 to be tested. The switch circuit boards 201 are connected to connectors 213 on the motherboard 207.

[0410] 25, large noise is generated when the switch circuit 124 of the switch circuit board 201 is turned on and off. As a countermeasure, a metal plate is placed between the switch circuit boards 201 and is earthed. The metal plate is electrically connected to the circuit ground (GND) or earth potential (AGND).

[0411] Temperature information Tj, temperature information Tc, voltage Vi, and a control signal for the variable resistance circuit 125 are transmitted to the motherboard 207. In addition, power supply (connection) wiring and ground wiring for each circuit are formed and supplied to each circuit board via a connector 213.

[0412] 27 is an explanatory diagram of the device control board 209. A connector 213 is disposed on one side of the device control board 209. The connector 213 is used for electrical connection with the mother board 207.

[0413] An address designation switch 312 and a function designation switch 313 are arranged on the edge of the device control board 209. In addition, an address designation switch 311 is arranged on the switch circuit board 201, as shown in FIG.

[0414] The address designation switch 311 and the address designation switch 312 are setting switches that indicate the address (number) of the device control board 209. The address designation switch 312 sets the address (number) of the device control board 209. The address designation switch 311, the address designation switch 312, and the function designation switch 313 are setting switches that allow four bits to be manually set.

[0415] The electrical element testing apparatus of the present invention can test a plurality of electrical elements simultaneously or sequentially. A switch circuit 124 is provided corresponding to each electrical element. Therefore, it is necessary to set an address (number) on the switch circuit board 201.

[0416] 26, an address (number) is set on the switch circuit board 201 by the address designation switch 311. In FIG. 27, an address (number) is set on the device control board 209.

[0417] Address designation switches 311 and 312 set addresses (numbers) on device control board 209 and switch circuit board 201, allowing them to be linked (associated, selected, designated) with electrical elements (semiconductor elements) 117 to be tested.

[0418] Connector 315 is a connector for connecting thermocouple 314. Various types of thermocouples can be used as thermocouple 314, such as a T-type thermocouple, a J-type thermocouple, an E-type thermocouple, or a K-type thermocouple.

[0419] The thermocouple 314 is attached to the package of the semiconductor module 117. Temperature information Tc can be obtained by the thermocouple 314. In the case of a long-term reliability test, it is preferable to employ the temperature information Tc. In this specification, it is assumed that the temperature information Tj is obtained by measuring the temperature of the diode D, and the temperature information Tc is obtained by measuring the package temperature.

[0420] In the present invention, the device control board 209 stores an electromotive force-temperature conversion table for each thermocouple so that the thermocouple 314 can be used for T-type thermocouples, J-type thermocouples, E-type thermocouples, K-type thermocouples, etc. The conversion table to be used is selected by the function designation switch 313. Therefore, the switch of the function designation switch 313 is set depending on the type of thermocouple 314 connected to the connector 315. The above address (number) setting matters are also applied to the address designation switch 311 of the switch circuit board 201.

[0421] By turning on the switch circuit 124d, the charge between the power supply (connection) wiring 211b and the power supply (connection) wiring 211c can be discharged. Also, the emitter terminal and collector terminal of the transistor 117m can be short-circuited to discharge the accumulated charge. The discharge of the charge generates a short-circuit current Im.

[0422] When the switch circuit 124c is turned on (closed), the power supply (connection) wiring 211b and the power supply (connection) wiring 211c are short-circuited. By turning on the switch circuit 124c, the charge between the power supply (connection) wiring 211b and the power supply (connection) wiring 211c can be discharged. In addition, the emitter terminal and collector terminal of the transistor 117s are short-circuited, and the accumulated charge can be discharged. A current Im is generated by the discharge of the charge.

[0423] When the switch circuit 124b is turned on (closed), the power supply (connection) wiring 211c and the power supply (connection) wiring 211a are short-circuited, and a short-circuit current Im flows. By turning on the switch circuit 124b, the charge between the power supply (connection) wiring 211c and the power supply (connection) wiring 211a can be discharged. In addition, the terminals of the semiconductor module 117 (between the collector terminal of the transistor 117s and the emitter terminal of the transistor 117m) are short-circuited, and the accumulated charge can be discharged.

[0424] When starting a test of the semiconductor module 117, the switch circuit 124 is turned on (closed) and then the test is started. When ending the test of the semiconductor module 117, the switch circuit 124 is also turned on (closed). During the test of the semiconductor module 117, the switch circuit 124 is turned off (open).

[0425] The on / off state of the switch circuit 124 is linked to the stopper 500. When the stopper 500 is not in the on state, the switch circuit 124 maintains the on state, and the test current Id is not applied to the transistor 117 to be tested. The on / off state of the switch circuit 124 is also linked to the on / off state of the power supply device 132 (power supply device 132a, power supply device 132b).

[0426] This is linked to the open / closed state of the door 527. When the door 527 is open, the switch circuits 124b and 124d are maintained in the on state, so that the output voltage (current) of the power supply device 132 does not supply current to the transistor 117 being tested. The linking is performed by detecting this with a stopper 500 or the like. Alternatively, the output switches such as the switch circuit 124e are maintained in the open state.

[0427] Switch circuit 124b is disposed on switch circuit board 201b. Conductive plates 204c and 204d are attached to switch circuit board 201b. Fork plug 205e is inserted through opening 216 in partition wall 214. Fork plug 205d is electrically connected to conductor plate 204c. Fork plug 205d is electrically connected to conductor plate 204d.

[0428] Figures 32, 33, and 34 are explanatory diagrams of the semiconductor device testing apparatus 210 of the present invention. Figure 32 is an explanatory diagram of the semiconductor device testing apparatus of the present invention seen from the front. Figures 33 and 34 are explanatory diagrams of the semiconductor device testing apparatus of the present invention seen from the side. Figure 33 is an explanatory diagram of the upper housing 502 when closed. Figure 34 is an explanatory diagram of the upper housing 502 when pulled down to the rear of the testing apparatus 210.

[0429] In one embodiment, as shown in Figure 32, the semiconductor element 117 and the like are arranged at the left end of the housing 210, and the fork plug 205 is arranged at the right end. The present invention is not limited to this. The left and right (chamber C1, chamber C2) may be in opposite positions. Also, the upper and lower positions of chamber A and chamber B may be reversed.

[0430] In the present invention, semiconductor element 117 is placed on one end side or one side of the center position of housing (test device) 210. In addition, wiring connected to element terminal 226 via flexible conductor 381 is drawn in one direction. A connecting member such as fork plug 205 is connected to one end of the wiring not connected to element terminal 226, and the connecting member and conductor plate 204 are fitted or connected together.

[0431] Connection members such as fork plug 205 are supported by support members such as opening 216 and conductive plate 204. Fork plug 205 is inserted from a chamber located below chamber C1 and fitted or connected to conductive plate 204 in chamber B.

[0432] 32, conductive plates 204U and conductor plates 204L are mounted or arranged on switch circuit board 201. Conductive plate 204U arranged on the upper side of switch circuit board 201, which is located near chamber C2, is connected to fork plug 205a inserted from chamber C2. Conductive plate 204L arranged on the lower side of switch circuit board 201 is connected to fork plug 205b inserted from chamber A.

[0433] An observation window 504 is arranged in a door 503 of the upper housing 502. The observation window 504 is made of a transparent resin substrate or glass substrate. Through the observation window 504, the state of the semiconductor element 117 to be tested and the connection state of the wiring 211 etc. can be observed and monitored.

[0434] A handle 515 is attached to the door 503. By using the handle 515, the door 503 can be pulled upward. Furthermore, by using the handle 515, the upper housing 502 can be moved in the depth direction (front and rear direction) as shown in Fig. 34. A sensor (not shown) is attached to the handle 515 and the door 503, and the power of the test device 210 will not be turned on unless the door 503 is closed, and the test will not start.

[0435] The confirmation lamp 514 is disposed on the front side of the housing 210. When the fork plug 205 and the conductor plate 204 are electrically connected, the confirmation lamp 514 lights up. The lighting of the confirmation lamp 514 is controlled by the controller circuit 111. The confirmation lamp 514 lights up.

[0436] When the switch circuit 124 is turned on, the voltage or current from the power supply device 132 is applied to the element terminal 226 of the semiconductor element 117 via the conductive plate 204L, the switch circuit 124, the conductive plate 204U, the fork plug 205a, and the power supply (connection) wiring 211b.

[0437] As shown in Fig. 33, upper housing 502 is configured to be movable on guide rails 506. As shown in Fig. 34, by moving upper housing 502 on guide rails 506, it is possible to remove upper housing 502 from the position of opening 216 into which fork plug 205 is inserted. As shown in Fig. 33, fork plug 205a inserted through opening 216 is connected or fitted with conductor plate 204U.

[0438] 34 shows the state in which upper housing 502 has been moved along guide rails 506. Stoppers 500 are provided to prevent upper housing 502 from moving more than a certain distance. The position of stoppers 500 also serves to position upper housing 502.

[0439] 34, by moving upper housing 502, upper housing 502 can be removed from fork plug 205a, or can be moved to a position where upper housing 502 does not interfere with inserting fork plug 205a into opening 216. This makes it easy to visually confirm the position of opening 216 into which fork plug 205 is inserted, to insert fork plug 205a into opening 216, and to change the insertion position.

[0440] 32, semiconductor module 117 and the like are arranged at one end of housing (test device) 210, and fork plug 205 is arranged at the other end, and fork plug 205 is inserted through opening (support member) 216 to connect to conductor plate 204 of switch circuit board 201. By arranging power supply (connection) wiring 211 and the like in one direction, it is easy to change the connection of the test circuit, and it is also easy to change the connection with switch circuit board 201. Furthermore, the size of test device 210 can be reduced.

[0441] The semiconductor device testing device of the present invention is not limited to the configuration shown in FIG. 32 , and other configurations, such as those shown in FIGS. 35 and 36 , are also exemplified. In the embodiment shown in FIG. 35 , a dry air injection (filling) container (chamber) 208a is disposed at the left end of a housing (testing device) 210, a flexible conductor 381a is disposed, and a semiconductor device 117a to be tested is disposed. A dry air injection (filling) container (chamber) 208b is disposed at the right end of the housing (testing device) 210, a flexible conductor 381b is disposed, and a semiconductor device 117b to be tested is disposed. An opening 216 is formed or disposed near the center of the housing (testing device) 210. A fork plug 205a is connected to a power supply (connecting) wiring 211a. A fork plug 205b is connected to a power supply (connecting) wiring 211b.

[0442] The fork plug 205a or the fork plug 205b is connected to or fitted with the conductor plate 204 of the switch circuit board 201 in the chamber B. A plurality of switch circuit boards 201 are arranged in the chamber B. Also arranged therein are a mother board 207, a device control board 209, a control circuit board 120, and a controller circuit board 111.

[0443] Test module replacement, test conditions, test settings, and wiring changes can be easily performed by selecting the position of opening 216 for inserting fork plug 205a or fork plug 205b and the connected switch circuit board 201. In addition, boards can be specified and linked using address specification switches 311, 312, and function specification switches 313.

[0444] 35 is an embodiment in which semiconductor module 117 and the like are arranged on the edge or peripheral portion of housing 210, and opening 216 and the like for inserting or connecting fork plug 205 are arranged or formed in a position other than the center or end of housing 210. However, the present invention is not limited to this.

[0445] 36, dry air injection (filling) container (chamber) 208a, flexible conductor 381a, and semiconductor element 117a to be tested are placed at the left end position of housing (testing device) 210. Dry air injection (filling) container (chamber) 208b, flexible conductor 381b, and semiconductor element 117b to be tested are placed at the center position of housing (testing device) 210.

[0446] An opening 216 is formed or arranged near the center of the housing (test device) 210. The fork plug 205a is connected to the power supply (connection) wiring 211a. The fork plug 205a is inserted through the opening 216a and is fitted or connected to the conductor plate of the switch circuit board 201.

[0447] A dry air injection (filling) container (chamber) 208b is arranged near the center of the housing (testing device) 210, and also a flexible conductor 381b is arranged therein, and a semiconductor device 117b to be tested is arranged therein. An opening 216b is formed or arranged at the right end of the housing 210. A fork plug 205b is connected to a power supply (connection) wiring 211b. The fork plug 205b is inserted from the opening 216b and is fitted or connected to the conductor plate of the switch circuit board 201. One conductive plate 204 is configured so that fork plug 205a and fork plug 205b can be connected to it.

[0448] The fork plug 205a or the fork plug 205b is connected to or fitted with the conductor plate 204 of the switch circuit board 201 in the chamber B. A plurality of switch circuit boards 201 are arranged in the chamber B. Also arranged therein are a mother board 207, a device control board 209, a control circuit board 120, and a controller circuit board 111.

[0449] 15, 16, 17, and 18, the position at which fork plug 205 is inserted into opening 216 can be changed to change the wiring (connection) during testing and the test conditions. Power supply (connection) wiring 211 connected to fork plug 205a is thick and stiff. Therefore, a configuration that allows upper housing 502 to be moved is effective. Also, it is useful to arrange power supply (connection) wiring 211a, power supply (connection) wiring 211b, and power supply (connection) wiring 211c approximately in parallel so that they can be connected to switch circuit board 201, etc.

[0450] 1 is an embodiment in which the semiconductor module 117 is composed of a transistor 117s and a transistor 117m. The semiconductor module 117 (semiconductor element 117, electric element 117) tested or evaluated by the test device of the present invention is not limited to one composed of a plurality of semiconductor elements (electric elements).

[0451] FIG. 19 shows an embodiment in which a semiconductor (electrical) module 117 is configured with one semiconductor device. In the embodiment of the present invention in FIG. 19, the semiconductor device 117 will be described as the semiconductor module 117 described in FIG. 6, as an example. However, the present invention is not limited to the semiconductor module 117 of FIG. 6, and it goes without saying that it can also be applied to, for example, the electrical device (semiconductor device) of FIG. 37. Furthermore, the semiconductor device (electrical device) testing apparatus of the present invention can test and evaluate a wide variety of semiconductor devices and electrical devices. Furthermore, the semiconductor device (electrical device) testing method of the present invention can test and evaluate a wide variety of semiconductor devices and electrical devices.

[0452] 19, fork plug 205e is electrically connected to collector device terminal 226a of transistor 117. Fork plug 205c is electrically connected to emitter device terminal 226b of transistor 117. A control measurement circuit 133 is connected to transistor 117.

[0453] The control measurement circuit 133 is configured or arranged with a gate signal control circuit 112, a gate driver circuit 113, a variable resistance circuit (current measurement element) 125, a controller circuit (controller circuit board) 111, a temperature measurement circuit 115, and a buffer amplifier (operational amplifier, voltage measurement circuit, terminal voltage output circuit, impedance conversion circuit, voltage output circuit) 116.

[0454] A constant current Id is applied (supplied) to the transistor 117, and a buffer amplifier (terminal voltage output circuit) 116 measures the channel-to-channel voltage Vi of the transistor 117 during test operation. The voltage Vi changes due to changes in the characteristics of the transistor 117, such as deterioration. For example, when the voltage Vi increases, the power consumption of the transistor 117 increases and the amount of heat generated increases, because the test current Id is constant.

[0455] The present invention has a function of changing the signal voltage Vgs applied to the gate terminal g of the transistor 117 in response to changes in the voltage Vi. For example, increasing the voltage Vgs decreases the channel voltage Vce(Vi) of the transistor 117. By lowering the voltage Vi, the amount of heat generated by the transistor 117 can be suppressed.

[0456] The present invention changes the Vgs voltage in real time, and even if the Vi voltage changes, it is possible to change or set the Vgs of transistor 117 when testing transistor 117. Furthermore, as the test progresses, it is possible to maintain the power consumption of transistor 117 at a constant value in response to changes in the Vi voltage of the transistor, and to increase or decrease the power consumption of transistor 117 based on the passage of test time or changes in characteristics.

[0457] 6, a connector 202 is connected to the signal connection section 227 of the control measurement circuit 133, and a signal is transmitted via a signal line 203. The connector 202 is connected to a collector terminal c1, a gate terminal g1, and an emitter terminal e1.

[0458] The gate driver circuit 113 has a built-in DA converter circuit. Data such as an on-voltage or off-voltage is sent from the controller circuit 111 to the gate signal control circuit 112. The on-voltage and off-voltage can be changed and set in real time.

[0459] The gate signal control circuit 112 performs timing control and voltage control, and applies a gate signal to the gate driver circuit 113. The gate driver circuit 113 also functions as a drive circuit, and applies a Vgs signal to a gate signal terminal 225g of the transistor 117 via a resistance circuit 125.

[0460] The output side of the gate driver circuit 113 has a variable resistance circuit 125 or a fixed resistance circuit 125. The resistance value R of the variable resistance circuit 125 can be varied between 0 (Ω) and 500 (Ω). In the case of the fixed resistance circuit 125, a selected fixed resistance element is connected. Also, a diode element (not shown) is connected in parallel to the resistance circuit 125 to adjust the rising and falling waveforms of the gate voltage signal Vgs.

[0461] The gate driver circuit 113 is configured to be able to set a constant voltage or a voltage that changes over time. For example, the gate driver circuit 113 can set or change the on-voltage or off-voltage in synchronization with the on-voltage application cycle. The gate driver circuit 113 is configured so that it can be set (output) by the gate signal control circuit 112 to a voltage Vgs that changes periodically and over time.

[0462] A voltage measurement circuit 126 is provided to measure the voltage across the resistor circuit 125. A current flows through the resistor circuit 125 to be input to and output from the gate signal terminal 225g. When a current flows through the resistor circuit 125, a voltage is generated between the terminals of the resistor circuit 125. The voltage is measured by the voltage measurement circuit 126. If the resistance value of the resistor circuit 125 is known, the current flowing through the gate signal terminal 225g can be measured using the generated voltage and the resistance value.

[0463] The voltage measurement circuit 126 is a current measurement circuit that measures the current flowing into or out of the gate terminal of the transistor 117, as well as the leakage current. The current can be calculated by measuring the voltage between both terminals of the resistance circuit 125. The current flowing into the gate of the transistor 117 may also be measured directly as the "input / output current, leakage current." The voltage measurement circuit 126 can measure the leakage current flowing into the gate terminal of the transistor 117. By adjusting the value of the resistance R of the variable resistance circuit 125, the slope angle of the voltage waveform at the rising and falling edges of the gate signal can be adjusted or set.

[0464] The gate driver circuit 113 can set the slope of the rising waveform (rise time Tr) and the slope of the falling waveform (fall time Td) of the gate voltage Vg applied to the gate terminal g of the transistor 117. By separately adjusting the rise time Tr and fall time Td, the on-time and on-characteristics of the transistor 117 are controlled to predetermined values. Furthermore, the gate signal voltage Vgs, on-time, and on-characteristics are set to predetermined values ​​based on the inter-channel voltage Vi, or are changed in real time.

[0465] As described above, the electrical element (semiconductor element) testing apparatus and testing method of the present invention can control, adjust, or set the resistance value R of the variable resistance circuit 125 connected to the gate terminal of the transistor 117 or the rise time / fall time of the gate driver circuit 113 at any time during the test or at the cycle in which the on voltage or off voltage is applied.

[0466] A constant current circuit 118 supplies a predetermined constant current Ic. The constant current Ic is applied to a diode 119. When the temperature of the transistor 117 changes, the terminal voltage of the diode 119 changes. By monitoring the terminal voltage Vi of the diode 119, the temperature change of the transistor 117 can be measured or observed.

[0467] The temperature (voltage) or temperature change (voltage change) is called temperature information Tj. Therefore, the temperature information Tj is the voltage between the channel terminals of the transistor (between the collector and emitter terminals of the transistor 117, or between the source and drain terminals of the transistor 117).

[0468] 1, 19, and 20, the temperature information Tj is the voltage Vce between the anode and cathode terminals of the diode 119 or between the collector and emitter terminals of the transistor 117. Therefore, without using the diode 119, the temperature change of the transistor 117 can be measured by turning on the transistor 117, passing a constant current through the transistor 117, and measuring the voltage Vce between the transistor channels (between the collector terminal and the emitter terminal, or between the source terminal and the drain terminal). The measured voltage Vi becomes the temperature information Tj.

[0469] The temperature information Tj can also be obtained from a temperature sensor 316 attached to the transistor 117 or the semiconductor module 117. Alternatively, it can be measured by the temperature sensor 316 as shown in FIG.

[0470] The diode 119 may be a diode of another semiconductor chip mounted on the semiconductor chip on which the transistor 117 is formed. The diode 119 may utilize a parasitic diode formed secondarily when the transistor 117 is formed. Alternatively, a posistor or a thermistor may be used.

[0471] The constant current circuit 118 supplies a constant current Ic to a diode 119 disposed or formed between the channels of the transistor 117 or between the channels of the transistor 117. When the constant current Ic is applied to the diode 119, an off voltage is applied to the gate terminal (base terminal) of the transistor 117.

[0472] The operational amplifier circuit 116 buffers (lowers the output impedance of) the terminal voltage of the diode 119 or the voltage between the channel terminals of the transistor 117, and outputs it as the Vi voltage. The operational amplifier circuit 116 is a low-impedance output circuit.

[0473] The Vi voltage is converted from analog to digital by the temperature measurement circuit 115. The Vi voltage changes depending on the temperature of the transistor 117. Therefore, by measuring the Vi voltage, the temperature of the transistor 117 can be obtained. In other words, temperature information Tj of the transistor 117 can be obtained.

[0474] The terminal voltage Vi of the diode 119 or the transistor 117 is applied to the temperature measurement circuit 115. The temperature measurement circuit 115 obtains temperature information Tj of the transistor 117 from the terminal voltage Vi of the diode, or calculates the temperature, and transfers it to the controller circuit 111.

[0475] The embodiment of Fig. 20 is a semiconductor device testing device according to an embodiment of the present invention. A transistor 117 in Fig. 20 is provided with a separate diode 119 (Ds: diode Dsa, diode Dsb) for temperature measurement. The diode Ds is formed in the same process as the transistor 117.

[0476] In the embodiment of FIG. 20, a diode Ds that is not connected (independent) to the transistor 117 is formed. The diode Dsa is formed in a direction that allows a constant current Ic to flow. The diode Dsb is formed in a direction that allows a constant current Ic' to flow. The constant current circuit 118 (Pc) generates the constant current Ic and the constant current Ic'.

[0477] Diodes Dsa and Dsb are diodes for measuring temperature. The structures of diodes Dsa and Dsb are similar to or identical to diode Di in FIG. 14 and the like.

[0478] Diode Di is connected to the terminals (terminals c and e) of transistor 117, while diodes Dsa and Dsb are not connected to the terminals of transistor 117 but are connected to independent terminals.

[0479] 20, the diode Ds is separated from the path through which the test current Id flows. A constant current Ic can be made to flow through the diode even while the current Id is flowing through the transistor 117. Therefore, the time for measuring the temperature information Tj can be freely set or selected.

[0480] However, as shown in FIG. 30(d), tc2 is placed or set during the period when the gate signal is Vt. The temperature information Tj measured during the period tc2 is used as the value before the transistor 117 operates. The period tc1 is preferably immediately before the test current Id of the transistor 117 is stopped. However, it may also be immediately after the test current Id is stopped. The periods "immediately before" and "immediately after" are preferably within 1 ms. The operational amplifier circuit 116 acquires the voltage between the terminals of the diode Ds, and the temperature measurement circuit 115 converts the voltage between the terminals into temperature information Tj.

[0481] The temperature information Tj is sent to a controller circuit board (controller) 111, which then performs or stops testing or changes control of the transistor 117 in accordance with the temperature information Tj.

[0482] The constant current Ic and the constant current Ic' are currents of the same magnitude. However, if the threshold voltages of the diodes Dsa and Dsb are different, or if the characteristics of the diodes Dsa and Dsb are different, it is preferable to make the magnitudes of the constant current Ic and the constant current Ic' different.

[0483] An operational amplifier circuit 116 acquires the voltage across the diode Dsa or Dsb, and a temperature measurement circuit 115 converts the voltage Vi across the diode into temperature information Tj. The temperature information Tj is sent to a controller circuit board (controller) 111, which then tests a transistor 117 based on the temperature information Tj.

[0484] The temperature information Tj obtained by passing a constant current Ic and the temperature information Tj obtained by passing a constant current Ic' are averaged or weighted to obtain a single value of temperature information Tj. Using this temperature information Tj, the controller circuit board (controller) 111 performs or stops testing of the transistor 117 or changes control.

[0485] 1, the semiconductor module 117 is illustrated and described as being one. However, multiple semiconductor modules 117 are placed on the test stand 505 and the dry air injection (filling) container 208, and a test (evaluation) is performed by applying and stopping the test current Id and test voltage Vd to the multiple semiconductor modules 117 simultaneously or sequentially. Fig. 21 shows an embodiment in which a plurality of semiconductor modules 117 of Fig. 1 are arranged. However, it goes without saying that parts not necessary for the explanation are omitted.

[0486] 21, semiconductor modules 117a, 117b, and 117c are configured with transistors 117s and 117m as shown in Fig. 1. The collector terminal of transistor 117s of semiconductor module 117a is connected to fork plug 205e1, and fork plug 205e1 is fitted with conductor plate 204d1 of switch circuit board 201b1.

[0487] The conductor plate 204c1 of the switch circuit board 201b1 is fitted with the fork plug 205d1, and the fork plug 205d1 is connected to the power supply device 132. When the switch circuit 124a1 is turned on, the test current Id from the power supply device 132 is applied to the collector terminal of the transistor 117s of the semiconductor module 117a.

[0488] The emitter terminal of the transistor 117m of the semiconductor module 117a is connected to the fork plug 205c1, which is connected to the conductor plate 204h, which is connected to the ground potential.

[0489] Similarly, the collector terminal of the transistor 117s of the semiconductor module 117b, the conductor plate 204c2 of the switch circuit board 201b2, and the fork plug 205d2 are fitted together, and the fork plug 205d2 is connected to the power supply device 132. When the switch circuit 124a2 is turned on, the test current Id from the power supply device 132 is applied to the collector terminal of the transistor 117s.

[0490] The emitter terminal of transistor 117m of semiconductor module 117b is connected to fork plug 205c2, which is connected to conductor plate 204h. The collector terminal of transistor 117s of semiconductor module 117c, conductor plate 204c3 of switch circuit board 201b3, and fork plug 205d3 are fitted together, and fork plug 205d3 is connected to power supply device 132. When switch circuit 124a3 is turned on, test current Id from power supply device 132 is applied to the collector terminal of transistor 117s.

[0491] The emitter terminal of the transistor 117m of the semiconductor module 117c is connected to the fork plug 205c3, and the fork plug 205c3 is connected to the conductor plate 204h.

[0492] The transistors 117 of the semiconductor modules 117 (semiconductor modules 117a, 117b, and 117c) are controlled to be turned on and off by the control and measurement circuits 133 (control and measurement circuits 133a, 133b, and 133c) connected to the semiconductor modules 117. Also, the test current Id is turned on and off by the switch circuit 124a.

[0493] It is preferable to control the semiconductor modules 117 (semiconductor module 117a, semiconductor module 117b, semiconductor module 117c) so that the test currents Id supplied to the respective semiconductor modules 117 do not overlap. By preventing the test currents from overlapping, the maximum current of the power supply device 132 can be reduced, and the capacity of the power supply device 132 can be reduced.

[0494] FIG. 21 shows an embodiment in which semiconductor module 117 is configured with two or more transistors, such as transistor 117s and transistor 117m. The present invention is not limited to this. FIG. 23 shows an embodiment in which semiconductor module 117 is configured with one transistor. Other details are the same as those in FIG. 21, so a description thereof will be omitted.

[0495] 21, 23, etc., conductor plate 204 is fitted or connected by fork plug 205, but the present invention is not limited to this. In Fig. 22, conductor plate 204c (conductor plate 204c1, conductor plate 204c2, conductor plate 204c3) is connected to power supply (connection) wiring 211a by connection bolts (screws) 219a (connection bolt 219a1, connection bolt 219a2, connection bolt 219a3).

[0496] The emitter terminals of transistors 117 (transistor 117a, transistor 117b, transistor 117c) are wired and connected to conductive plate 204h by connecting bolts (screws) 219b (connecting bolts 219b1, 219b2, and 219b3). Conductive plate 204h is connected to earth potential. Furthermore, conductive plate 204b of switch circuit board 201a is connected to earth potential (ground voltage) by connecting bolt 219c.

[0497] In the embodiment of FIG. 22, the connection of the test circuit can be easily changed by fitting the fork plug 205e (fork plug 205e1, fork plug 205e2, fork plug 205e3) with the conductor plate 204d (conductor plate 204cd1, conductor plate 204d2, conductor plate 204d3) of the selected switch circuit board 201b (switch circuit board 201b1, switch circuit board 201b2, switch circuit board 201b3), and by fitting the fork plug 205a with the conductor plate 204a of the switch circuit board 201a. The above points are the same in the embodiments shown in FIGS. 21 and 23 and other embodiments, and distinctive effects can be achieved.

[0498] 24 is a configuration diagram and explanatory diagram of the semiconductor device testing apparatus of the present invention. Address designation switches 311 are arranged on switch circuit boards 201b (switch circuit boards 201b1, 201b2, 201b3, and 201b4) and switch circuit board 201a. Switch circuit boards 201 (switch circuit boards 201a and 201b) and controller circuit board 111 are connected to motherboard 207 (not shown) by connectors 213.

[0499] Conductive plate 204d (conductor plate 204d1, conductor plate 204d2, conductor plate 204d3, conductor plate 204d4) is mounted or arranged on switch circuit board 201b, and switch circuit board 201b is selected by connecting conductor plate 204d to fork plug 205e (fork plug 205e1, fork plug 205e2, fork plug 205e3, fork plug 205e4).

[0500] In the embodiment of the present invention, the conductor plate 204 is described as being mounted on the switch circuit board 201, but the conductor plate 204 may be formed integrally with the switch circuit board 201. Needless to say, the switch circuit board 201 and the conductor plate 204 may be arranged separately, and the switch circuit 124 and the separated conductor plate 204 may be connected by a connecting wire or the like. Two conductor plates 204 may be used and arranged to sandwich both sides of the switch circuit board 201. The conductor plate 204 may be formed in the shape of a connector terminal, and a connector may be inserted to make the connection.

[0501] Fork plugs 205d (fork plugs 205d1, 205d2, 205d3, and 205d4) are fitted into the conductor plates 204c (conductor plates 204c1, 204c2, 204c3, and 204c4). The fork plug 205a is connected to the switch circuit board 201a.

[0502] The switch circuit board 201b and the switch circuit board 201a have the same specifications. The switch circuit board 201 is used as either the switch circuit board 201b or the switch circuit board 201a depending on the application.

[0503] Fork plugs 205c (fork plug 205c1, fork plug 205c2, fork plug 205c3, fork plug 205c4) are connected to semiconductor modules 117 (semiconductor module 117a, semiconductor module 117b, semiconductor module 117c, semiconductor module 117d), and fork plugs 205c are directly connected to conductor plate 204 or earth potential (ground voltage).

[0504] In this embodiment of the present invention, the gate driver circuit 113 generates on-voltages of two potential levels and applies them to the gate terminal g of the transistor 117. The on-voltage is Vg, and the off-voltage Voff is 0 V or V0 (reference voltage, earth voltage, ground voltage), or a voltage Vt lower than 0 V.

[0505] Although the V2 voltage is described as being higher than the V1 voltage, it is not limited to this. The V2 voltage is a voltage of a potential other than the V1 voltage, and may be a voltage of a predetermined value set when the constant current Ic is flowing. When the V2 voltage is higher than the V1 voltage, the resistance between the channel terminals of the transistor 117 decreases (the transistor 117 enters an on-state with a lower resistance value than when the V1 voltage is applied), and when the constant current Ic is flowing between the channels, the measured voltage Vi becomes stable. It is preferable that the Vg voltage, Vt voltage, V0 voltage, V2 voltage, V1 voltage, etc. be configured so that they can be changed at each cycle (t cycle). For example, the voltage values ​​are configured or controlled so that they can be changed in response to changes in the characteristics or deterioration of the semiconductor module 117.

[0506] The Vg voltage, V2 voltage, and V1 voltage are the voltages Von that turn on the transistor 117, and are set by changing or adjusting them when the transistor part number or type is different. The V0 voltage and Vt voltage are the voltages (Voff) that turn off the transistor 117, and are set by changing or adjusting them when the transistor part number or type is different. The V2 voltage is a fixed voltage when applying a constant current Ic and measuring the voltage Vi between the channel terminals. In the test device of the present invention, the gate signal voltage Vgs can be set and changed in real time.

[0507] For example, the setting of the V1 voltage is changed depending on the type of semiconductor element 117. By setting the V2 voltage to a predetermined constant voltage regardless of the semiconductor element 117, it is possible to compare changes in characteristics depending on the type of semiconductor element (transistor) 117.

[0508] The gate driver circuit 113 can output two or more level voltages such as V1 and V2, and can also output triangular waves, sine waves, etc. that change over time (see, for example, FIG. 46(c), FIG. 47(b)).

[0509] The transistor 117 is operated / non-operated (on / off) by the Vg signal voltage (gate signal voltage Vgs) output from the gate driver circuit 113. While the transistor 117 is on, a test current Id (Idm, Ids) flows or can flow between the channels of the transistor 117.

[0510] In the embodiment of FIG. 1 etc., by selecting the switch circuit board 201 to be connected to the fork plug 205g or the fork plug 205e, the semiconductor module 117 (transistor 117) to be tested, such as the transistor 117s or the transistor 117m, can be selected, and the test current Id can be applied to perform testing and evaluation.

[0511] Even if semiconductor module 117 is configured with multiple semiconductor elements such as transistor 117s and transistor 117m, it is possible to test only transistor 117s or only transistor 117m by changing the connection state of fork plug 205. Even if the test current Id is large and power supply (connection) wiring 211 and the like are thick and stiff, simply changing the position of fork plug 205 makes it easy to change the test.

[0512] The control measurement circuit 133 is connected to the transistor 117 via a connector 202. The length (distance) between the gate driver circuit 113 and the gate terminal g (225g) of the transistor 117 is short, less than 100 mm. If the distance between the gate driver circuit 113 and the gate terminal g of the transistor 117 is long, noise may be superimposed on the gate terminal g, causing the transistor 117 to malfunction.

[0513] The control measurement circuit 133 is arranged or mounted on the device control board 209. The semiconductor element 117 is arranged or mounted on a test stand 505. As shown in FIG. 1 etc., a gate voltage signal Vg is applied from the gate driver circuit 113 to the gate terminal g (225g) of the transistor 117. The gate driver circuit 113 has an operational amplifier circuit (voltage buffer circuit) 116.

[0514] As shown in Figures 3, 24, 25, 26, etc., the controller circuit board 111, switch circuit board 201, device control board 209, etc. are arranged in room B of the semiconductor element testing apparatus (housing) 210 of the present invention. The power supply device 132 is installed in the lower part (chamber A) of the test device 210. The power supply device 132 and the like are separated from the chamber B by a partition wall 215.

[0515] Shield plates, shield films, etc. that absorb noise are formed or placed on the partition walls 214 and 215. The shield plates, etc. can suppress malfunctions of the power supply device, test circuit, and test semiconductor element.

[0516] The power supply device 132, the switch circuit 124 of the switch circuit board 201, and the transistor 117 generate large noises by repeatedly operating and non-operating. The noise causes the circuit boards and other components to malfunction. Malfunctions can be prevented by providing electrostatic and electromagnetic shielding to the partition walls 214, 215, and 212 of each chamber. In addition, a board with a shield layer is placed between adjacent switch circuit boards 201, and the board with the shield layer is grounded to earth potential.

[0517] The present invention suppresses noise generation and prevents malfunction of the test device by synchronizing the operation of switch circuit 124b of switch circuit board 201a and switch circuit 124a of switch circuit board 201b. A board having an (electromagnetic and electrostatic) shielding layer is inserted into connector 213 located adjacent to switch circuit board 201. The ground terminal of connector 213 is electrically connected to the shielding layer of the board having a shielding layer. The mounting position of the board having a shielding layer can be freely set in response to a change in the mounting position of switch circuit board 201 mounted on motherboard 207.

[0518] Electrostatic shielding and electromagnetic shielding are realized by attaching or forming conductive plates, conductive plates (conductor plates), conductive films, metal plates, metal films, or wire mesh around each chamber, or on the surface or inside of partitions 214, 215, and 212.

[0519] The control and measurement circuit 133 is preferably located close to the transistor under test 117. Alternatively, the signal wiring may be a twisted cable, a shielded cable, or a coaxial cable.

[0520] The control measurement circuits 133 are individually arranged corresponding to each transistor 117 to be tested, and the control measurement circuits 133 are configured so as to be easily removable using connectors 202 or the like. The constant current circuit 118 supplies a constant current Ic to a diode 119, diode Ds, or diode Dm arranged or formed between the channels of the transistor 117. Alternatively, the constant current circuit 118 supplies a constant current Ic between the channels of the transistor 117. The operational amplifier circuit 116 buffers (lowers the output impedance) the terminal voltage of the diode 119 or the voltage between the channel terminals of the transistor 117, and outputs it as the voltage Vi.

[0521] The Vi voltage is converted from analog to digital by the temperature measurement circuit 115. The Vi voltage changes depending on the temperature of the transistor 117. Therefore, by measuring the Vi voltage, it is possible to obtain temperature information (Tj) of the transistor 117. Since the Vi voltage changes depending on the temperature of the transistor 117, the Vi voltage corresponds to the temperature information Tj.

[0522] The temperature information Tj is calculated by converting the Vi voltage into a temperature coefficient or calculating it relatively to temperature. The temperature information Tj is the change rate, change width, absolute or relative voltage change of the Vi voltage.

[0523] The terminal voltage Vi of the diode 119 or the transistor 117 is applied to the temperature measurement circuit 115. The temperature measurement circuit 115 obtains temperature information Tj of the transistor 117 from the terminal voltage Vi of the diode 119, or measures the temperature, and transfers it to the controller circuit 111.

[0524] The gate driver circuit 113 applies a set on-voltage to the gate terminal g (225g) of the transistor 117 at a set frequency (on-off cycle t cycle).

[0525] 38 is an explanatory diagram of a method for testing a semiconductor device according to the first embodiment of the present invention. In FIG. 38, Vgs is a gate voltage signal applied to the gate terminal (225g) of the transistor 117 to be tested. Id is a current passed through the transistor 117 during testing. For ease of explanation, it is assumed that the test current Id passes when the transistor 117 is on.

[0526] In Figure 38(c), St1 is a timing signal for causing a current Ic to flow through diode 119, and when St1 is at H level, a current flows through diode 119 of transistor 117. St1 corresponds to switch St1 (St1s, St1m) in Figures 1 and 19. St2 corresponds to St2 in Figure 20. St1 and St2 are switches, and when at H level, switch St1 and switch St2 are turned on (closed), and constant current Ic flows. When at L level, switch St1 and switch St2 are turned off (open), and constant current Ic is cut off.

[0527] An operational amplifier circuit 116 acquires a voltage across the diode 119, and a temperature measurement circuit 115 converts the voltage across the terminals into temperature information Tj. The temperature information Tj is sent to a controller circuit board (controller) 111, which then tests a transistor 117 (semiconductor element 117) based on the temperature information Tj.

[0528] The test current Id is a current that flows through the transistor 117 being tested and is a current output by the power supply device 132. St1 and St2 are the time during which the measurement current Ic flows through the temperature measurement diode or the time during which the temperature is measured. Alternatively, they are the time during which the measurement current Ic flows between the channels of the transistor 117 or the time during which the temperature is measured. FIG. 38(e) 124a shows the on / off signal of the switch circuit 124a, and FIG. 38(f) 124b shows the on / off signal of the switch circuit 124b.

[0529] In FIG. 38(g), Vce indicates the voltage at the c terminal of the transistor 117 (channel voltage of the transistor 117), and temperature information Tj indicates the measured temperature change of the transistor 117.

[0530] As shown in FIG. 38(a), a gate voltage signal Vgs is applied from the gate driver circuit 113 to the gate terminal g (225g) of the transistor 117. The gate voltage signal Vgs has a cycle time tcycle and an on-time ton. The cycle time tcycle and the on-time ton can be set to any value by the gate signal control circuit 112. The on-voltage Vg can also be set to any voltage. The cycle time tcycle, the on-time ton, and the Vg voltage can be set or changed based on changes in the Vi voltage. The Vg voltage can also be set or changed based on the measured Vi voltage.

[0531] A constant current Id is applied (supplied) to the transistor 117, and a buffer amplifier (terminal voltage output circuit) 116 measures the channel-to-channel voltage Vi of the transistor 117 during test operation. The voltage Vi changes due to changes in the characteristics of the transistor 117, such as deterioration. For example, when the voltage Vi increases, the power consumption of the transistor 117 increases and the amount of heat generated increases, because the test current Id is constant.

[0532] The present invention has a function of changing the signal voltage Vgs applied to the gate terminal g of the transistor 117 in response to changes in the voltage Vi. For example, increasing the voltage Vgs decreases the channel-to-channel voltage Vce(Vi) of the transistor 117. Increasing the voltage Vgs decreases the voltage Vi, thereby suppressing the amount of heat generated by the transistor 117.

[0533] The present invention can implement a test mode in which the Vgs voltage is changed in real time, and the power consumption of transistor 117 is kept constant even when the Vi voltage changes. When the measured Vi voltage increases, the gate signal voltage Vgs is increased to reduce the on-resistance of transistor 117, thereby controlling the amount of heat generated by transistor 117 under test to be constant.

[0534] Conversely, if the Vi voltage drops, the signal voltage Vgs applied to the gate terminal g of the transistor 117 is lowered and the channel-to-channel voltage Vce (=Vi) of the transistor 117 is increased to maintain the power consumption of the transistor 117 at a constant value. In other words, a test can be performed to maintain the power consumption of the transistor 117 at a constant value in response to changes in the characteristics of the transistor 117. The device also has a function to change the Vgs voltage in real time and adjust the Vi voltage. The test is also performed to maintain the heat generation in the transistor 117 at a constant value or within a certain range.

[0535] The Vgs can be changed independently for transistor 117s and transistor 117m. Furthermore, when testing multiple transistors 117, as shown in Figures 21, 22, and 23, the Vgs of each transistor 117 can be changed or set. Furthermore, in response to changes in the Vi voltage of each transistor, the power consumption of transistor 117 can be maintained at a constant value, or the power consumption of transistor 117 can be increased or decreased over the test time.

[0536] 38(d) St2 is a timing signal for causing a current Ic to flow through the diode Dsa and the diode Dsb in the embodiment shown in FIG. 20. When St2 is at H level, a current flows through the diode Dsa or Dsb of the transistor 117. In this case, a constant current Ic is caused to flow through a device (diode) independent of the transistor 117 to acquire temperature information Tj (voltage Vi).

[0537] An operational amplifier circuit 116 acquires a voltage Vi across the terminals of the diode Dsa or Dsb, and a temperature measurement circuit 115 converts the voltage Vi across the terminals into temperature information Tj. The temperature information Tj is sent to a controller circuit board (controller) 111, which then tests a transistor 117 based on the temperature information Tj.

[0538] For ease of understanding, the measured temperature information Tj will be described as varying between T1 and T2 as shown in Figure 38(h). The temperature information Tj increases when current is applied to the transistor 117, and decreases when the current is stopped. The temperature information Tj also varies based on changes in the characteristics of the transistor 117.

[0539] 38(e) 124a shows the timing of the on / off control signal for switch circuit 124a. When 124a is Von, switch circuit 124a is closed (on). When 124a is 0, switch circuit 124a is open (off) (Voff), and the application of current Id or voltage Vd is cut off.

[0540] 38(f) 124b shows the timing of the on / off control signal for switch circuit 124b. When 124b is Von, switch circuit 124b closes (turns on). When it is 0V, switch circuit 124b opens (turns off) (Voff).

[0541] In Figure 38(g), Vce is the channel voltage (voltage between the emitter terminal and collector terminal) of transistor 117. Surge voltage and surge current are generated based on the on / off state of transistor 117. Furthermore, the Vce waveform changes in a complex manner over time as the on-resistance of transistor 117 changes. Diode 119 is connected to the collector terminal and emitter terminal (source terminal and drain terminal) of transistor 117. When current Ic flows through diode 119, the Vce waveform of transistor 117 changes.

[0542] In this specification and drawings, for ease of explanation or drawing, it is assumed that when transistor 117 is on, it is at voltage Vn, and when the transistor is off, it is at voltage Ve (-Ve).

[0543] The gate voltage signal Vgs is applied to the gate terminal of the transistor 117 under test with a period tcycle, an on time ton, and an off time toff, which can be set to any value.

[0544] 38, when the transistor 117 is an N-channel transistor, the gate voltage signal Vgs has a ground voltage of 0 (V) as its off voltage and Vg as its on voltage. When the transistor 117 is a P-channel transistor, the potentials of the on voltage and off voltage are changed.

[0545] During a period tn2 before turning on the transistor 117, the Vt voltage is set to a voltage more negative than the off voltage, and during a period tn1 after turning off the transistor 117, the Vt voltage is set to a voltage more negative than the off voltage.

[0546] The Vt voltage is a voltage lower than 0 (V) and higher than -4 (V). Therefore, Vt is a voltage equal to or higher than -4 (V) and lower than 0 (V). The Vt voltage can be set arbitrarily between 2 V and -10 V.

[0547] For example, if the transistor 117 is SiC, the off-voltage is the Vt voltage, and if it is an IGBT, the off-voltage is 0 (V). As described above, the semiconductor device testing device of the present invention is configured so that the off-voltage (Voff, 0 V, Vt) supplied to the transistor 117 can be changed depending on the type of transistor 117 being tested. In addition, the Vg voltage can be changed.

[0548] When the Vt voltage is applied, St1 (St2) is set to H level to measure the temperature of the transistor 117 (measure the terminal voltage of the diode 119 = measure the channel voltage of the transistor 117). While the Vt voltage is being applied, a constant current Ic is passed through the diode 119. Also, while St1 (St2) is at H level, the constant current Ic is passed.

[0549] By applying the Vt voltage to the gate terminal of the transistor 117, the off state of the transistor 117 is stabilized, and the Vi voltage (temperature information Tj) can be measured stably. Furthermore, the gate signal voltage Vgs=Vg voltage can be changed based on changes in the Vi voltage. Noise is easily introduced when measuring the temperature information Tj. It is preferable to measure the temperature information Tj multiple times in one measurement and perform averaging processing, etc.

[0550] By applying the Vt voltage to the gate terminal of the transistor 117, the leakage current of the transistor 117 is reduced, the measurement accuracy of the Vi voltage is improved, and the measurement is stabilized. The leakage current is measured by the voltage measurement circuit 126.

[0551] The gate voltage signal Vgs is set to the Vt voltage during times tn1 and tn2. For example, the times tn1 and tn2 are between 0.2 ms and 2 ms. The transistor 117 is assumed to be turned off at 0V.

[0552] Therefore, three voltages, Vg, 0 (V), and Vt, are applied to the gate terminal g of the transistor 117. While Vt is being applied, a current is passed through the transistor's diode 119 to measure temperature information Tj. This is particularly important for SiC transistors. Some types are not completely off at 0 V. However, maintaining a low off voltage can change the transistor's characteristics. In the case of IGBT transistors, applying the Vt voltage is often unnecessary.

[0553] When the constant current Ic is made to flow through the diode 119 , the switch circuit 124 a is turned off to prevent current from the power supply device 132 from being applied to the transistor 117 .

[0554] A terminal voltage Vi of the diode 119 is obtained by passing a constant current Ic through the diode 119, and an operational amplifier circuit 116 outputs a voltage Vi corresponding to the terminal voltage. The voltage Vi is input to a temperature measurement circuit 115, which determines temperature information Tj corresponding to the temperature of the transistor 117. The operational amplifier circuit 116 functions as a buffer circuit.

[0555] The temperature information Tj is transferred to a controller circuit board (controller) 111, which controls the test of the transistor 117 (semiconductor element 117) by continuing, stopping, changing conditions, etc., of the test of the transistor 117 based on the temperature information Tj.

[0556] 38(e) 124a is a timing signal for controlling the on / off of the switch circuit 124a of the switch circuit board 201b. When the switch circuit 124a is turned on, the test current Id and the like are supplied to the transistor 117, and when the switch circuit 124a is turned off, the test current Id and the like are cut off to the transistor 117.

[0557] 38(f) 124b is a timing signal for controlling the on / off of the switch circuit 124b of the switch circuit board 201a. When the switch circuit 124b is turned on, the charge between the terminals of the power supply device 132 is discharged, and the charge between the channels of the transistors 117 and the like is discharged.

[0558] The switch circuit 124a is turned on with a delay of tm2 after the Vgs signal of the transistor 117 becomes Vg. The time tm2 can be changed and set by the controller circuit board (controller) 111.

[0559] Switch circuit 124b turns on tb2 hours before switch circuit 124a turns on. Switch circuit 124b remains on until tb1 hours after switch circuit 124a turns on. The tb2 and tb1 times can be changed independently. The setting of tb1 is particularly important. The time tb1 is set or changed appropriately by observing the waveform of the Vce voltage of the transistor 117.

[0560] The switch circuit 124a turns on after a time tm2 has elapsed since the gate signal voltage Vgs reached the Vg voltage. Furthermore, the gate signal voltage Vgs reaches the off voltage after a time tm1 has elapsed since the switch circuit 124a turned off. Alternatively, the switch circuit 124a turns off tm1 before the Vgs signal of the transistor 117 reaches Vt. The time tm1 can be changed and set by the controller circuit board (controller) 111.

[0561] Switch circuit 124b turns on a time ta2 before switch circuit 124a turns off. Switch circuit 124b remains on until ta1 after switch circuit 124a turns off. The ta2 and ta1 times can be changed independently. The setting of ta1 is particularly important. The time ta1 is set or changed appropriately by observing or measuring the waveform of the Vce voltage of the transistor 117.

[0562] When the switch circuit 124b is turned on, the output terminal of the power supply device 132 is short-circuited to the ground (ground line), and the charge is discharged. As the charge is discharged, the terminal voltage of the power supply device 132 becomes 0 (V) (ground voltage). Furthermore, the current Id output by the power supply device 132 flows to the ground as a current Im. Furthermore, the charge between the channel of the transistor 117 is discharged. Therefore, the current Id is not applied to the transistor 117, and the collector voltage of the transistor 117 does not rise.

[0563] The time tb2 is set by observing or measuring the time when the output voltage of the power supply device 132 becomes 0 (V) or close to 0 (V), or the time when the output voltage of the power supply device 132 becomes lower than the collector voltage of the transistor 117.

[0564] At the time when the above voltage relationship reaches a predetermined value (after tb2 has elapsed), the switch circuit 124a is turned on to apply the current Id from the power supply device 132. However, at this time, the switch circuit 124b is on, so the current Id from the power supply device 132 flows to the ground (ground line) as the current Im via the switch circuit 124b. Therefore, the test current Id does not flow through the transistor 117.

[0565] After the switch circuit 124a is turned on, the switch circuit 124b is turned off after a time tb1 has elapsed, and the test current Id is supplied to the transistor 117. The test current Id and the test voltage Vd are supplied to the transistor 117 in synchronization with the switch circuit 124a.

[0566] By operating the switch circuits 124a and 124b as described above, the surge voltage Vs or the inrush current Is is not applied to the transistor 117. Alternatively, the surge voltage Vs or the inrush current Is is suppressed, and the transistor 117 can be properly tested.

[0567] When the test current Id to the transistor 117 is stopped, the switch circuit 124b is turned on before the switch circuit 124a is turned off (ta2). The test current Id output by the power supply device 132 flows to ground as a current Im via the switch circuit 124b and is not supplied to the transistor 117.

[0568] The ta2 time is set by observing the time when the output voltage of the power supply device 132 becomes 0 (V) or close to 0 (V), or the time when the output voltage of the power supply device 132 becomes lower than the collector voltage of the transistor 117.

[0569] When the above voltage relationship reaches a predetermined value (after ta2), the switch circuit 124a is turned off. After ta1 has elapsed since the switch circuit 124a was turned off, the switch circuit 124b is turned off.

[0570] By operating or controlling the switch circuits 124a and 124b as described above, the surge voltage Vs or inrush current Is is not applied to the transistor 117. Alternatively, the surge voltage Vs or inrush current Is is suppressed, and the transistor 117 can be properly tested.

[0571] When the test current Id is supplied to the transistor 117, the temperature information Tj increases. When the test current Id to the transistor 117 is stopped, the temperature information Tj decreases. The temperature information Tj fluctuates between T1 and T2. When the characteristics of the transistor 117 fluctuate due to the test, the temperature information Tj gradually increases. To apply a constant current Id to the transistor 117, the power supply device 132 is operated to apply the current Id to the transistor 117.

[0572] When the constant current Ic is caused to flow through the diode 119, an off voltage is applied to the gate terminal g of the transistor 117 and the switch circuit 124a is in the off state. Therefore, when the gate signal voltage Vgs is set to the on voltage after the switch circuit 124a is turned on, if the switch circuit 124b is in the off state (the switch circuits 124a, 124b, and gate signal voltage Vgs are at the off voltage), the temperature information Tj (voltage Vi) can be measured by causing a current to flow through the diode 119.

[0573] For example, the temperature information Tj before the test current Id is applied to the transistor 117 may be obtained when the gate signal voltage Vgs is off before the time tm2 when the switch circuit 124a is turned on. Also, the temperature information Tj after the test current Id is applied to the transistor 117 may be obtained when the gate signal voltage Vgs is off after the time tm1 after the switch circuit 124a is turned off.

[0574] 1, 19, 20, etc., the resistance value of the variable resistor circuit 125 of the gate driver circuit 113 can also be set or changed. Increasing the resistance value can change the rising / falling waveform of the gate voltage signal Vgs. Changing the rising and falling waveforms of the current Id can adjust or suppress surge voltage or inrush current.

[0575] The test is stopped when the temperature information Tj reaches the level of Tm, or when the rate of change of the temperature information Tj reaches a predetermined value. Also, the test conditions are changed.

[0576] St2 in Figures 20 and 38 is a switch that turns on and off the constant current Ic (Ic, Ic') from the constant current circuit 118. When St2 is set to H level, the constant current Ic from the constant current circuit 118 is supplied to diode 119 (diode 119a, diode 119b) and the like. When St2 is set to L level, the application of the constant current Ic is stopped. The switch St2 and the measurement of the voltage Vi (Tj) by the temperature measurement circuit 115 are linked.

[0577] St1 (St1s, St1m) in Figures 1, 19, and 38 is a switch that turns on and off the constant current Ic of the constant current circuit 118 (constant current circuit 118s, constant current circuit 118m). When St1 is set to H level, the constant current Ic from the constant current circuit 118 is supplied to the diode 119, etc. When St1 is set to L level, the application of the constant current Ic is stopped. The switch St1 and the measurement of the voltage Vi (Tj) by the temperature measurement circuit 115 are linked.

[0578] 38, when the switch circuit 124a (switch circuit 124c) is in the OFF state, the St1 signal is set to H and temperature information Tj is measured. The St1 signal is set to H level when the gate voltage signal is Vt. During the tn2 period, the signal is set to H level during the tc2 period, and temperature information Tj is measured. During the tn1 period, temperature information Tj is measured during the tc1 period.

[0579] The temperature information Tj measured during the period tc2 is the temperature information Tj at the time when the transistor 117 is cooled. The temperature information Tj measured during the period tc1 is the temperature information Tj immediately after the current Id to the transistor 117 is stopped. Stopping the test, changing the conditions, changing the control, etc. is determined based on the temperature information Tj measured during the tc2 period and the temperature information Tj measured during the tc1 period.

[0580] If the rate of change of the temperature information Tj measured during the tc1 period is larger than that of the temperature information Tj measured during the tc2 period, or if the difference in absolute value between the temperature information Tj measured during the tc1 period and the temperature information Tj measured during the tc2 period is large, the test is controlled and changed according to the measurement value temperature information Tj.

[0581] Furthermore, if the temperature information Tj measured during the period tc2 differs from the standard value by a predetermined value or more, it is determined whether there is a problem with the connection state of the transistor 117 or the test equipment, and a decision is made to "not start the test", etc. It is preferable to measure the Vi voltage multiple times during the period tc2 or tc1 and obtain the temperature information Tj for the Vi voltage.

[0582] During periods tn1 and tn2, a voltage Vt is applied to the gate terminal of transistor 117. As shown in Fig. 38(a), with the voltage Vt applied to the gate terminal g of transistor 117, as shown in Fig. 38(c) St1, during periods tc1 and tc2, switch St1 is turned H (on) to apply a constant current Ic to diode 119. With the constant current Ic applied, diode 119 (channel-to-channel voltage of transistor 117) is measured to obtain voltage Vi (temperature information Tj).

[0583] During the tcycle1 period, the Vt voltage is applied during periods tn1 and tn2, and St1 is turned on to measure the Vi voltage. During the tcycle2 period, the Vi voltage is not measured, so periods tn1 and tn2 are not provided and St1 is not turned on. In other words, temperature information Tj (voltage Vi) is not acquired. Deterioration of the transistor 117 does not progress (change) rapidly. Therefore, it is sufficient to measure the Vi voltage once every several tens of cycles. Furthermore, if the Vi voltage is measured every time, the characteristics of the transistor 117 may change due to the application of the Vt voltage, etc.

[0584] In SiC transistors and the like, applying a voltage (Vt voltage) lower than the off voltage (0 V) stabilizes the off characteristics when measuring the temperature of the transistor 117. The off voltage value may be set differently depending on the type of transistor 117. Even in this case, it is effective to apply a predetermined voltage value different from the off voltage to the gate terminal and obtain temperature information.

[0585] The Vt voltage is not limited to a voltage lower than 0V. It may be a predetermined set voltage, and may be higher than 0V (off voltage). In a method of applying a constant current Ic or the like while the transistor 117 is turned on, the Vt voltage may be set to a voltage higher than the on voltage (Vg voltage). Furthermore, the present invention also allows for variably adjusting the off voltage (0V).

[0586] If a voltage (Vt voltage) lower than the off voltage (0 V) is constantly applied, the Vt voltage may cause degradation of the transistor 117. Degradation due to the Vt voltage may interfere with characteristic evaluation using the test current Id. Therefore, it is preferable to apply the Vt voltage in pulses for a short period of time.

[0587] During the period tcycle1 in which the temperature information Tj is measured, the Vt voltage is applied to the gate terminal g and the switch St1 is turned on. During the period tcycle2 in which the temperature information Tj is not measured, the Vt voltage is not applied to the gate terminal g and is maintained at 0 V. The switch St1 is also in the off state. As described above, the signal voltage waveform applied to the gate terminal is changed between cycles in which the Vi voltage (temperature information Tj) is measured and cycles in which it is not measured.

[0588] The embodiment of Fig. 20 is an explanatory diagram of a semiconductor device testing device of the present invention. A transistor 117 in Fig. 20 is provided with a separate diode 119 (Ds) (diode 119a (Dsa) and diode 119b (Dsb)) for temperature measurement.

[0589] 20, the diode 119 is formed in the same process as the transistor 117. The temperature measurement diodes 119 (diode 119a, diode 119b) can apply (supply) the constant current Ic even during the period when the test current Id is being applied. The temperature information Tj measured during the period tc2 is the temperature information Tj at the time when the transistor 117 is cooled. The temperature information Tj measured during the period tc1 is the temperature information Tj immediately after the current Id to the transistor 117 is stopped.

[0590] As shown in Figure 20, a switch St2 is formed and arranged in the constant current circuit 118. St2 in Figures 20 and 38 is a switch that turns on and off the constant current Ic (constant current Ic, constant current Ic') from the constant current circuit 118. By setting St12 to the H level, the constant current Ic from the constant current circuit 118 is supplied to the diode 119, etc. By setting St2 to the L level, the application of the constant current Ic is stopped. The switch St2 and the measurement of the voltage Vi (Tj) by the temperature measurement circuit 115 are linked.

[0591] As shown in FIG. 38, when the switch circuit 124a is in the off state, the St2 signal is set to H and temperature information Tj is measured. The St2 signal is set to H level during the tn2 period when the gate voltage signal is Vt. During the tn2 period, the St2 signal is set to H level during the tc2 period, and temperature information Tj is measured. During the St2 period, even when the test current Id is being supplied, like during the ton period, a constant current Ic can be passed through the diode 119 during the tc1 period to measure the Vi voltage. Since the transistor 117 generates heat during the period when the Id current is being supplied, this is appropriate for temperature measurement.

[0592] The temperature information Tj measured during the period tc2 is the temperature information Tj at the time when the transistor 117 is cooled. The temperature information Tj measured during the period tc1 is the temperature information Tj immediately after the current Id to the transistor 117 is stopped. Stopping the test, changing the conditions, changing the control, etc. is determined based on the temperature information Tj measured during the tc2 period and the temperature information Tj measured during the tc1 period.

[0593] If the rate of change of the temperature information Tj measured during the tc1 period is larger than that of the temperature information Tj measured during the tc2 period, or if the difference in absolute value between the temperature information Tj measured during the tc1 period and the temperature information Tj measured during the tc2 period is large, the test is controlled and changed according to the measurement value temperature information Tj.

[0594] Furthermore, if the temperature information Tj measured during the period tc2 differs from the standard value by a predetermined value or more, it is determined whether there is a problem with the connection state of the transistor 117 or the test equipment, and a decision is made to "not start the test," etc. It is preferable to measure Vi multiple times during the period tc2 or tc1 and obtain the temperature information Tj for Vi.

[0595] During periods tn1 and tn2, a Vt voltage is applied to the gate terminal of transistor 117. With the Vt voltage applied to the gate terminal g of transistor 117 as shown in Fig. 38(a), during periods tc1 and tc2, as shown in Fig. 38(c) St1 and Fig. 38(d) St2, switches St1 and St2 are turned H (on) to apply a constant current Ic to diode 119. With the constant current Ic applied, diode 119 (channel-to-channel voltage of transistor 117) is measured to obtain voltage Vi (temperature information Tj).

[0596] In the period tcycle1, the Vt voltage is applied during periods tn1 and tn2, and St1 is turned on to measure the Vi voltage. In the period tcycle2, the Vi voltage is not measured, so the periods tn1 and tn2 are not provided, and St1 and St2 are not turned on.

[0597] In SiC transistors and the like, applying a voltage (Vt voltage) lower than the off-voltage (0 V) stabilizes the transistor 117 during temperature measurement. The off-voltage value may be set differently depending on the type of transistor 117. Even in this case, it is effective to apply a predetermined voltage value different from the off-voltage to the gate terminal and obtain temperature information.

[0598] The Vt voltage is not limited to a voltage lower than 0 V. It may be a predetermined set voltage that is higher than 0 V (off voltage). In a method in which a constant current Ic or the like is applied while the transistor 117 is turned on, the Vt voltage may be set to a voltage higher than the on voltage (Vg voltage).

[0599] If a voltage (Vt voltage) lower than the off voltage (0 V) is constantly applied, the transistor 117 may deteriorate due to the Vt voltage. If deterioration occurs due to the Vt voltage, it will interfere with characteristic evaluation using the test current Id. It is impossible to determine or distinguish whether the deterioration of the transistor 117 is due to the test current Id or the application of the Vt voltage has a significant effect. In the present invention, the Vt voltage is applied in a pulsed manner for a short period of time, thereby preventing deterioration of the transistor 117 due to the application of the Vt voltage.

[0600] During the period tcycle1 in which the temperature information Tj is measured, the Vt voltage is applied to the gate terminal g, and the switch St1 is turned on. During the period tcycle2 in which the temperature information Tj is not measured, the Vt voltage is not applied to the gate terminal g, and 0 V (off voltage) is maintained. The switch St1 is also in the off state. As described above, the signal voltage waveform applied to the gate terminal is changed between cycles in which the Vi voltage (temperature information Tj) is measured and cycles in which it is not measured.

[0601] In the embodiment of FIG. 20, the temperature information Tj is measured at the timing of the St2 signal in FIG. 38(d). When the switch circuit 124a is in the off state, the St2 signal is set to H and the temperature information Tj is measured. During the tn2 period, the signal is set to H level during the tc2 period and the temperature information Tj is measured. During the tc1 period, the temperature information Tj may be measured during either the ton period or the tn1 period. The temperature information Tj measured during the tc2 period and the temperature information Tj measured during the tc1 period are averaged to obtain the temperature information Tj. In the embodiment of FIG. 20, a diode Ds that is not connected to (is independent of) the transistor 117 is formed.

[0602] The diode Dsa is formed in a direction that allows the constant current Ic to flow. The diode Dsb is formed in a direction that allows the constant current Ic' to flow. The constant current circuit 118 generates the constant current Ic and the constant current Ic'.

[0603] Diodes Dsa and Dsb are temperature measurement diodes 119. The structures of diodes Dsa and Dsb are similar to or identical to the diode 119 in FIG.

[0604] The diodes 119 and 119 have the same operation or configuration, except that the diode 119 is connected to the terminals (terminals c and e) of the transistor 117, whereas the diodes Dsa and Dsb are not connected to the terminals of the transistor 117 but are connected to independent terminals, and the temperature information Tj of the diode 119 is measured at the timing of St1 in Figure 38(c), whereas the temperature information Tj of the diodes Dsa and Dsb is measured at the timing of St2 in Figure 38(d).

[0605] In the embodiment of FIG. 20, the diode Ds is separated from the path through which the test current Id flows. Even when the current Id flows through the transistor 117, a constant current Ic can be passed through the diode. This allows the time for measuring the temperature information Tj to be freely set. As shown in FIG. 38(d), the positions of tc1 and tc2 can be set.

[0606] However, as shown in FIG. 38(d), tc2 is placed or set during the period when the gate voltage signal is Vt. The temperature information Tj measured during tc2 is used as the value before the transistor 117 operates. The period tc1 is preferably immediately before the test current Id of the transistor 117 is stopped. However, it may also be immediately after the test current Id is stopped. It is preferable that "immediately before" and "immediately after" are within 1 ms. St2 in FIG. 38(d) is a timing signal for causing the constant current Ic (or constant current Ic') to flow through the diode Ds (Dsa, Dsb).

[0607] When St2 is at H level, a current flows through the diode Ds (Dsa, Dsb) of the transistor 117. The operational amplifier circuit 116 acquires the voltage Vi across the diode Ds, and the temperature measurement circuit 115 converts the voltage Vi across the terminals into temperature information Tj.

[0608] The temperature information Tj is sent to a controller circuit board (controller) 111, which then performs or stops testing or changes control of the transistor 117 in accordance with the temperature information Tj.

[0609] When St2 is at H level, the constant current circuit 118 supplies the constant current Ic, which flows through the diode Dsa, and the constant current circuit 118 supplies the constant current Ic', which flows through the diode Dsb.

[0610] The constant current Ic and the constant current Ic' are currents of the same magnitude. However, if the threshold voltages of the diodes Dsa and Dsb are different, or if the characteristics of the diodes Dsa and Dsb are different, it is preferable to make the magnitudes of the constant current Ic and the constant current Ic' different.

[0611] An operational amplifier circuit 116 acquires a voltage Vi across the terminals of the diode Dsa or Dsb, and a temperature measurement circuit 115 converts the voltage Vi across the terminals into temperature information Tj. The temperature information Tj is sent to a controller circuit board (controller) 111, which then tests a transistor 117 based on the temperature information Tj.

[0612] The temperature information Tj obtained by passing a constant current Ic and the temperature information Tj obtained by passing a constant current Ic' are averaged or weighted to obtain a single value of temperature information Tj. Using this temperature information Tj, the controller circuit board (controller) 111 performs or stops testing of the transistor 117 or changes control.

[0613] Other details are the same as or similar to the details or contents described in this specification and drawings, and therefore will not be described here. It goes without saying that the present invention can be modified in various ways without departing from the spirit of the invention. It goes without saying that the details or contents described in this specification and drawings can be mutually combined.

[0614] The gate driver circuit 113 can output voltages of two or more levels, and can also output triangular waves, sine waves, etc. that change over time (see, for example, FIG. 46(c), FIG. 47(b)).

[0615] The transistor 117 is operated / non-operated (on / off) by the gate signal voltage Vgs output from the gate driver circuit 113. While the transistor 117 is on, a test current Id (Idm in the transistor 117m, Ids in the transistor 117s) flows between the channels of the transistor 117. Alternatively, a test current Id can flow.

[0616] In the example of Fig. 38, an off voltage is applied during the period in which the Vi voltage is measured, and in the case of a SiC transistor, etc., a Vt voltage is applied as the off voltage. Fig. 39 shows an example in which the on voltage is changed and set when measuring the Vi voltage (temperature information Tj).

[0617] Because the test current Id is a constant current, a change in the Vi voltage causes a change in the power consumption of the transistor 117. In other words, the amount of heat generated by the transistor 117 changes. The heat generated by the transistor 117 affects the lifespan and characteristic changes of the transistor 117. When the Vi voltage changes, the Vi voltage can be changed by changing the gate signal voltage Vgs applied to the gate terminal g of the transistor 117. Therefore, even if the characteristics of the transistor 117 change and the Vi voltage changes, the Vi voltage can be maintained at a constant value by changing Vgs. In other words, the transistor 117 can be tested with a predetermined power consumption.

[0618] The present invention has a function of changing the signal voltage Vgs applied to the gate terminal g of the transistor 117 in response to changes in the voltage Vi. For example, increasing the voltage Vgs decreases the channel voltage Vce(Vi) of the transistor 117. By lowering the voltage Vi, the amount of heat generated by the transistor 117 can be suppressed.

[0619] The present invention changes the Vgs voltage in real time, and even if the Vi voltage changes, it can change or set the Vgs of transistor 117 to maintain power consumption within a predetermined range. Furthermore, as the test progresses, it is possible to maintain the power consumption of transistor 117 at a constant value, or increase or decrease the power consumption at a constant rate in response to changes in the Vi voltage of the transistor. That is, it is possible to set or change the Vgs voltage in real time based on the passage of test time or changes in characteristics, thereby increasing or decreasing the power consumption of transistor 117.

[0620] The details regarding the switch circuit 124b and the like are the same as those in FIG. 38 and the like. The switch circuit 124a is a switch that controls the supply and cutoff of the test current Id to the transistor 117 and the like. The constant current Ic is controlled by the switch St1 or the switch St2. Vce is an example of the channel-to-channel voltage of the transistor 117. Note that FIGS. 1, 19, and 20 are shown as configuration diagrams of the test equipment.

[0621] The terminal voltage Vi of the diode 119 or the transistor (semiconductor module) 117 is applied to a temperature measurement circuit 115. The temperature measurement circuit 115 obtains temperature information Tj of the transistor 117 from the terminal voltage Vi of the diode, or measures the temperature, and transfers it to the controller circuit (controller circuit board) 111. The gate driver circuit 113 applies a set on-voltage to the gate terminal g of the transistor 117 at a set frequency (on-off cycle t cycle).

[0622] In one embodiment, as shown in Figure 39(a), the on-off cycle of transistor 117 is tcycle, the on-time is ton, and the off-time is toff.

[0623] As one embodiment of the present invention, the voltages output by the gate driver circuit 113 are on-voltage V2, on-voltage V1, and off-voltage Voff (V0). The gate driver circuit 113 can output voltages of three levels or more. For example, in the case of four voltages, on-voltage V2, on-voltage V1, off-voltage Voff1 = 0V, and off-voltage Voff2 = -2V, which is lower than off-voltage Voff1, are exemplified.

[0624] Regarding tm2, tm1, tc2, tc1, etc. illustrated in FIG. 38, there may be cases where illustration in other timing charts is omitted. Needless to say, the matters and contents described in FIG. 38 can also be applied in other embodiments such as FIG. 39 in a timely manner.

[0625] For example, in the embodiments of FIGS. 39 and 40, the gate driver circuit 113 generates on-voltages (V1 voltage, V2 voltage) of two types of potential levels and applies them as gate signal voltage Vgs to the gate terminal g of the transistor 117.

[0626] <00020-45>Apply on-voltage V1 to the gate terminal, and then apply on-voltage V2 to the gate terminal. By applying on-voltage V2, the transistor 117 becomes strongly on (the channel-to-channel resistance of the transistor 117 decreases compared to the case of V1). Alternatively, the transistor 117 becomes on state by a predetermined voltage. The voltage V2 is expressed as "strong on" for ease of explanation, but is not limited thereto. The voltage V2 may be any predetermined voltage. For example, in the measurement of the Vi voltage, the setting of V2 < V1 may also be acceptable.

[0627] In an embodiment of the present invention, when V1 < V2, the resistance between the channels of the transistor 117 can be made smaller than in the case of V1. When applying the V2 voltage, supply a constant current Ic to the transistor 117 and measure the voltage Vi between the channel terminals of the transistor 117. The Vi voltage is processed by integrating or adding coefficients, etc., and becomes the temperature information Tj.

[0628] The gate driver circuit 113 can output or set four or more levels of voltage. It can also output a triangular wave, sine wave, etc. that change over time (such as the period t2 to t3 in FIG. 46(c)). It can also randomly change the gate signal voltage Vgs and apply it to the gate terminal Vg.

[0629] The transistor 117 is operated / non-operated (ON / OFF) by the gate signal voltage Vgs output from the gate driver circuit 113. A test current Id flows between the channels of the transistor 117 while the transistor 117 is ON. The gate driver circuit 113 includes a variable resistance circuit 125. The resistance value R of the variable resistance circuit 125 can be varied between 0 (Ω) and 500 (Ω).

[0630] It is effective to change the value of R when the V2 voltage is applied and when the V1 voltage is applied, as in the examples of Figures 40 and 41. For example, in one embodiment, the resistance R is set to 300 Ω when the V1 voltage is applied, and the resistance R is set to 20 Ω when the V2 voltage is applied.

[0631] By setting the resistance value of the resistor R lower when the V2 voltage is applied than when the V1 voltage is applied, the channel terminal voltage Vi at the constant current Ic flowing through the transistor 117 is stabilized. The resistance value of the resistor R is set according to the voltage value (voltage V2, voltage V1, etc.) applied to the gate terminal g. It is also preferable to change or set the voltages V2, V1, and Vt based on the measured channel terminal voltage Vi. It is also preferable to change or set the period, etc. (t cycle, ton, toff) based on the measured channel terminal voltage Vi.

[0632] The resistance value of the resistor R connected to the gate terminal g is changed when the test current Id is supplied to the transistor 117 and when the constant current Ic is supplied to the transistor 117. Alternatively, the resistance value of the resistor R of the resistor circuit 125 is made different or changed.

[0633] When changing from the V1 voltage to the V2 voltage, the resistance R of the resistor circuit 125 when the V1 voltage is applied is synchronized with the timing of changing the resistance R of the resistor circuit 125 when the V2 voltage is applied, and the resistance R is changed accordingly. By increasing the resistance R, it is possible to suppress the occurrence of inrush current and surge voltage.

[0634] The occurrence of inrush current and surge voltage can be suppressed by varying or making different the resistance value R for the voltages Vn, V0 (Voff), V1, and V2 applied to the gate terminal g. Also, by making the resistance value R different, it is possible to intentionally generate inrush current and surge voltage.

[0635] 39 is an explanatory diagram and timing chart of the semiconductor element (electrical element) testing method of the present invention. During periods tn1 and tn2, the resistance value R of the variable resistance circuit 125 or fixed resistance circuit connected to the gate terminal of transistor 117 is set to 0 (Ω) or the lowest possible resistance value. A constant current Ic from constant current circuit 118 is passed through transistor 117. The constant current Ic flows from collector terminal c to emitter terminal (flows in the forward direction), generating a channel-to-channel voltage Vce between the channels of transistor 117. This voltage Vce is measured and used as the Vi voltage. Temperature information Tj is also obtained from the Vi voltage.

[0636] Therefore, a constant current Ic is passed through the transistor 117 in the forward direction, and the channel voltage or change in voltage of the transistor 117 is measured to obtain temperature information Tj of the transistor 117. In this case, the diode 119 is not necessary.

[0637] The semiconductor element (electric element) testing device of the present invention has mechanical members such as contact fittings 388, and can achieve a good electrical connection with element terminals 226. Furthermore, by controlling the on / off of switch circuit 124, voltages V2, V1, etc. can be applied to semiconductor element (semiconductor module) 117 in a good manner, suppressing inrush currents and surge voltages and enabling good evaluation, testing, and inspection.

[0638] The gate driver circuit 113 generates a predetermined voltage and applies it as a gate voltage Vg to the transistor 117. The predetermined voltage can be varied, and can also be changed periodically.

[0639] By applying a predetermined gate voltage and measuring the relationship between the channel voltage Vce and the temperature of the transistor 117, the temperature (temperature information Tj) of the transistor 117 can be determined from the channel voltage Vce (or the terminal voltage of the diode 119).

[0640] As shown in Figure 39(a), the on-off cycle of the transistor 117 is tcycle, and the on time is ton. The voltages output by the gate driver circuit 113 are an on-voltage V2, an on-voltage V1, and an off-voltage Voff(V0). The gate driver circuit 113 can output voltages of three or more levels. In one embodiment, V2 > V1 > Voff(V0) > Vn.

[0641] In the example of FIG. 39, the gate driver circuit 113 generates on-voltages (V2, V1) of two potential levels, and also generates two off-voltages Voff, Vt, which are applied to the gate terminal g of the transistor 117.

[0642] An on-voltage V2 is applied to the gate terminal for a period tn2, and then an on-voltage V1 is applied to the gate terminal for a period such as ton. Next, the on-voltage V2 is applied for a period tn1. When the on-voltage V2 is applied, the transistor 117 is strongly on (the channel-to-channel resistance is smaller) compared to when the on-voltage V1 is applied. Therefore, by changing the magnitude of the on-voltage, the channel-to-channel resistance of the transistor 117 can be changed.

[0643] When a power cycle test is performed on transistor 117, the Vi voltage rises as the test time passes. The Vi voltage decreases as the gate signal voltage Vgs of transistor 117 increases. Therefore, if the V2 voltage is set based on the Vi voltage, the Vi voltage can be maintained at a constant value or within a certain range. If the Vi voltage is constant, the test can be continued while the power consumption of transistor 117 is maintained at a constant value or within a certain range.

[0644] The gate driver circuit 113 of the present invention can output voltages of four or more levels. It can also output triangular waves, sine waves, etc. that change over time. The V2 voltage can be set and changed in real time.

[0645] The transistor 117 is operated / non-operated (on / off) by the gate signal voltage Vgs output from the gate driver circuit 113. If a test current Id is supplied from the power supply device 132 while the transistor 117 is on, the test current Id flows between the channels of the transistor 117.

[0646] The test current Id in Fig. 39(b) is applied by turning on (closing) the switch circuit 124a. By turning on the switch circuit 124a, the test current Id is supplied to the transistor 117. When the test current flows through the transistor 117, the inter-channel voltage (Vce)Vi of the transistor 117 changes, as shown in Fig. 39(c).

[0647] When the test current Id flows, heat is generated in the transistor 117. By measuring the channel voltage (Vce) Vi of the transistor 117 during the period tn1, the temperature (temperature information Tj) of the transistor 117 can be obtained.

[0648] After supplying the test current Id to the transistor 117, during a period tn1 in which the test current Id is not being supplied, the constant current Ic is supplied from the constant current circuit 118 to the transistor 117. The supply of the test current Id causes the transistor 117 to heat up. The heat generation correlates with a change in the characteristics or a deterioration state of the transistor 117.

[0649] The temperature (temperature information Tj) of the transistor 117 can be obtained by passing a constant current Ic through the transistor 117 and measuring the inter-terminal voltage Vi of the transistor 117. The inter-terminal voltage (Vce) Vi is obtained by a buffer amplifier (buffer circuit) 116. Note that a test method in which the on-voltage of the gate signal voltage Vgs is changed to maintain the voltage Vi constant is also exemplified.

[0650] 39(d), the temperature information Tj changes from T1 to T2 when the test current Id flows, and decreases from T2 when the test current Id stops.

[0651] Therefore, for accurate temperature measurement, it is preferable to measure the terminal voltage of the transistor 117 as soon as possible after the test current Id has stopped. The terminal voltage Vi is acquired by the buffer amplifier circuit 116. It is preferable to measure the output voltage of the buffer amplifier circuit 116 within 1 msec after the test current Id has stopped.

[0652] 39(f), the periods during which the constant current Ic flows and the voltage Vi is measured are exemplified as periods a, b, c, and d. The voltage Vi is obtained during period a, which is within period A during which the constant current Ic flows. The voltage Vi is obtained during period b, which is within period B during which the constant current Ic flows. The voltage Vi is obtained during period c while the constant current Ic is flowing. The voltage Vi is obtained during period d while the constant current Ic is flowing. Periods A and D are periods during which voltage V2 is applied to gate terminal g. Periods B and C are periods during which voltage V1 is applied to gate terminal g.

[0653] After the test current Id is applied, a constant current Ic is supplied to the transistor 117 during period D while the V2 voltage is applied to the gate terminal g, and the voltage Vi is measured. It is also effective to supply the constant current Ic to the transistor 117 and measure the voltage Vi during period A while the V2 voltage is applied to the gate terminal g before the test current Id is applied. By comparing the voltage Vi before and after the test current Id is supplied, and measuring and evaluating the change in the voltage Vi, it is possible to quantitatively measure the change in the characteristics of the transistor 117.

[0654] It is also effective to apply a constant current Ic to the transistor 117 and measure the voltage Vi of the transistor 117 during the period C when the V1 voltage is applied to the gate terminal g immediately after the test current Id is stopped after the test current Id is applied.

[0655] During period C, voltage V1 is applied to gate terminal g, and constant current Ic is supplied, and voltage Vi is acquired across the channel terminals of transistor 117. During period D, voltage V2 is applied to gate terminal g, and constant current Ic is supplied, and voltage Vi is acquired across the channel terminals of transistor 117. By comparing voltage Vi measured during period c with voltage Vi measured during period d, and measuring and evaluating the change in voltage Vi, it is possible to quantitatively measure changes in the characteristics of transistor 117.

[0656] During period A when voltage V2 is applied to gate terminal g before application of test current Id, it is also effective to apply constant current Ic to transistor 117 and measure voltage Vi of transistor 117. Also, during period B when voltage V1 is applied to gate terminal g before application of test current Id, it is also effective to apply constant current Ic to transistor 117 and measure voltage Vi of transistor 117.

[0657] By comparing the voltage Vi measured in the period a with the voltage Vi measured in the period b, and by measuring and evaluating the change in the voltage Vi, the change in the characteristics of the transistor 117 can be measured quantitatively.

[0658] During a period B in which the voltage V1 is applied to the gate terminal g before the test current Id is applied, a constant current Ic is applied to the transistor 117, and the voltage Vi of the transistor 117 is measured. It is also effective to apply a constant current Ic to the transistor 117 and measure the voltage Vi of the transistor 117 during a period C in which the voltage V1 is applied to the gate terminal g after the test current Id is applied.

[0659] By comparing the voltage Vi measured during period b with the voltage Vi measured during period c, and measuring and evaluating the change in voltage Vi, the change in the characteristics of transistor 117 can be quantitatively measured or evaluated.

[0660] During a period A during which the voltage V2 is applied to the gate terminal g before the application of the test current Id, a constant current Ic is applied to the transistor 117, and the voltage Vi of the transistor 117 is measured. It is also effective to apply a constant current Ic to the transistor 117 and measure the voltage Vi of the transistor 117 during a period D during which the voltage V2 is applied to the gate terminal g after the application of the test current Id.

[0661] By comparing the voltage Vi measured during period a with the voltage Vi measured during period d, and measuring and evaluating the change in voltage Vi, the change in the characteristics of transistor 117 can be quantitatively measured or evaluated.

[0662] In the example of FIG. 39, the timing for obtaining the temperature (temperature information Tj) of the transistor 117 is the period when the test current Id is not supplied to the transistor 117 and an on-voltage (V2 voltage or V1 voltage) is applied to the gate terminal g of the transistor 117. The constant current Ic is applied to the transistor 117 during one of periods A, B, C, and D, and the terminal-to-terminal voltage of the transistor 117 is measured. Furthermore, it is preferable to measure the terminal-to-terminal voltage during multiple periods for comparison with the temperature information measured or acquired during periods tn2 and tn1 (or to use it as a baseline).

[0663] It goes without saying that the measurement of the voltage Vi is not limited to every cycle (t cycle), and the voltage Vi may be measured for multiple cycles. For example, the relationship shown in FIG. 38(a) is exemplified.

[0664] The temperature information Tj is sent to the controller circuit 111 (controller circuit 111), and the controller circuit 111 (controller circuit 111) tests the transistor 117 (semiconductor element component 117) based on the temperature information Tj.

[0665] The constant current Ic of the present invention is supplied to the transistor 117 etc. at at least one of A, B, C, and D as shown in Figure 39(f), and the voltage Vi between the channels of the transistor 117 etc. is measured.

[0666] Periods A and B are periods in the cycle period (tcycle) before the test current Id is supplied (before application) to the transistor 117. Periods C and D are periods in the cycle period (tcycle) after the test current Id is supplied (after application) to the transistor 117.

[0667] 39(f), period A is the period tn2 of voltage Vg, during which voltage V2 is applied. Period B is the period during which voltage V1 is applied as voltage Vg, and test current Id is not supplied.

[0668] Period D is the period tn1 of the gate signal voltage Vg, during which voltage V2 is applied. Period C is the period before voltage V1 is applied as the gate signal voltage Vg and test current Id is supplied.

[0669] As shown in Figure 39(f), the constant current Ic is supplied to transistor 117, etc. at at least one point during periods A, B, C, and D, and as shown in Figure 39(g), the voltage Vi between the channels of transistor 117, etc. is measured or obtained at at least one point during periods a, b, c, and d.

[0670] As shown in Figure 39(g), during the period A in which constant current Ic is applied, the voltage Vi between the channels of transistor 117m (transistor 117s) or between the terminals of diode 119 (diode 119 is connected to the channel of transistor 117) is measured or acquired. In Figure 39(g), period a is a period within the range of period A in Figure 39(f).

[0671] When the V1 voltage or the V2 voltage is applied to the gate terminal g of the transistor 117, the transistor 117 turns on. In the embodiment of the present invention shown in Fig. 39, the constant current Ic is explained as being supplied in the forward direction between the channels of the transistor 117. In the case of a MOS transistor, current flows in both directions. In a power cycle test in which a test current Id is supplied to the transistor 117, the supply of the test current Id causes the transistor 117 to deteriorate.

[0672] In testing, the parts of a transistor that deteriorate are often the junctions within the transistor 117. The semiconductor itself rarely deteriorates, but the junctions (bonding, die bonding, etc.) of the transistor 117 deteriorate, causing the resistance value of the junctions to increase. As the resistance value increases, the channel-to-channel voltage Vce increases, generating heat and raising the temperature of the transistor 117.

[0673] When a semiconductor deteriorates, it is often the deterioration of the gate oxide film (insulating film) of transistor 117. When the gate oxide film deteriorates, the oxide film (insulating film) is short-circuited, and the voltage Vce drops. Alternatively, transistor 117 is turned off, no current flows through transistor 117, and the voltage Vce rises to the maximum value of the power supply voltage.

[0674] As shown in Figure 39(b), when a test current Id is applied to the transistor 117, the transistor 117 generates heat, and as a result, the temperature information Tj changes (the voltage Vi changes) as the channel and other components heat up, as shown in Figure 39(d). Furthermore, when the test current Id is stopped, the temperature of the channel and other components rises due to heat dissipation, and the temperature information Tj changes. For example, the temperature information Tj is equivalent to the channel-to-channel voltage.

[0675] A test current Id is supplied to the transistor 117, and as the transistor deteriorates, heat generation increases. The heat generation is indicated by temperature information Tj or correlates with temperature. The temperature information Tj correlates with the channel-to-channel voltage Vi of the transistor (it depends on the voltage Vi).

[0676] At the start of the test, the temperature information Tj varies between the minimum temperature T1 and the maximum temperature T2. When the test applies stress to the transistor 117, the Vce voltage of the transistor 117 changes, and the temperature information Tj usually increases. The temperature information Tj is, for example, the channel-to-channel voltage Vi of the transistor 117.

[0677] 39(d), the minimum temperature rises above temperature T1, and the maximum temperature approaches temperature information T2. ​​As transistor 117 deteriorates, the temperature rises and the rate of rise also increases. In the semiconductor device (electrical device) testing method of the present invention, the test is stopped under any of the following conditions. When the voltage Vi is outside the specified range. When the channel voltage Vce is outside the specified voltage range. - When the voltage Vi falls outside the specified voltage range within a certain period of time. When the gate signal voltage Vgs for setting the Vi voltage to a predetermined value exceeds a predetermined value.

[0678] To measure the deterioration of the transistor 117, it is preferable to supply a test current Id to the transistor 117, and then measure the inter-terminal voltage Vi by supplying a constant current Ic around the time when the test current Id is stopped, that is, during the period C or D in FIG.

[0679] The period C is immediately after the test current Id is stopped, and the amount of heat generated by the transistor 117 is maintained. Therefore, by measuring the V1 voltage during the period c and observing or evaluating the Vi voltage during the period c, it is possible to test or evaluate the transistor 117 properly.

[0680] During period D, the test current Id is stopped and the V2 voltage of period tn1 is applied. The amount of heat generated by transistor 117 is maintained, a V2 voltage higher than the V1 voltage is applied, the channel-to-channel resistance of transistor 117 decreases, and the V2 voltage is fixed as a steady voltage. Therefore, by measuring the V1 voltage during period d and observing or evaluating the Vi voltage during period d, it is possible to properly test or evaluate transistor 117.

[0681] In Figure 39, the periods tn1 and tn2 can be variably set and adjusted. The V2 voltage can also be variably set. In both periods C and D, it is effective to apply a constant current Ic and measure the channel-to-channel voltage (Vce, Vi) of the transistor 117. In period C, the V1 voltage is applied to the gate terminal (base terminal) of the transistor 117. In period D, the V2 voltage is applied to the gate terminal (base terminal) of the transistor 117.

[0682] By acquiring both the channel-to-channel voltage of transistor 117 when V1 voltage is applied and the channel-to-channel voltage of transistor 117 when V2 voltage is applied, the degradation state, degradation change rate, or operating state of transistor 117 can be quantitatively compared and evaluated.

[0683] The channel-to-channel voltage of transistor 117 measured when voltage V1 is applied and the channel-to-channel voltage of transistor 117 measured when voltage V2 is applied are acquired every cycle (t cycle) or every multiple cycles (t cycle), and the change or rate of change is measured and evaluated. The above matters can be similarly applied to other embodiments of the present invention.

[0684] It is also useful to measure the channel-to-channel voltage of transistor 117 during period A and during period D. Period A is before the test current Id is applied (supplied) to transistor 117, and voltage V2 is applied. Transistor 117 dissipates heat and cools down.

[0685] Period D occurs after the test current Id is applied to the transistor 117, and the same voltage V2 is applied. The transistor 117 dissipates almost no heat. By acquiring the channel voltages during both periods A and D, the degradation state or operating state of the transistor 117 can be quantitatively compared and evaluated.

[0686] It is also effective to measure the channel-to-channel voltage of the transistor 117 during period B, and measure the channel-to-channel voltage of the transistor 117 during period C. Period B is before the test current Id is applied (before supply) to the transistor 117, and voltage V1 is applied.

[0687] Period C is the period after the test current Id has been applied (supplied) to the transistor 117, and voltage V1 is applied. By acquiring the channel-to-channel voltage Vi during periods B and C, the deterioration state, change rate, change speed, and operating state of the transistor 117 can be quantitatively compared and evaluated.

[0688] It is also effective to measure the channel-to-channel voltage of transistor 117 during period C, and then measure the channel-to-channel voltage of transistor 117 during period D. Period C is the state immediately after the test current Id is applied to transistor 117 and then stopped, and voltage V1 is applied.

[0689] During period D, the test current Id is applied to the transistor 117 and then stopped, and voltage V2 is applied instead. By acquiring the channel voltages during periods C and D, the degradation state or operating state of the transistor 117 can be quantitatively compared and evaluated.

[0690] As described above, by applying a constant current Ic at multiple locations (periods) in one cycle (t cycle) or multiple cycles (t cycles) and measuring or acquiring the inter-channel voltage or rate of change of the transistor 117, etc., it is possible to perform good evaluation, quantitative evaluation, and testing of semiconductor elements such as the transistor 117.

[0691] Furthermore, by varying the voltage applied to the gate terminal in each measurement, better results can be obtained. It goes without saying that the above points can also be applied to other embodiments of the present invention. Furthermore, the present invention can be combined with other embodiments. In the example of FIG. 39, periods (tn2 period, tn1 period) in which the V2 voltage is applied to two points are set in a cycle (t cycle).

[0692] The embodiment described in FIG. 39 can also be applied to other embodiments such as FIG. 40. Needless to say, the matters described in FIG. 38 can also be applied to other embodiments. FIG. 40 shows an embodiment in which a period (tn1 period) is set during which the V2 voltage is applied to one location in a cycle (t cycle). The temperature information Tj is measured during period D as shown in FIG. 40(d). Furthermore, as necessary, the Vi voltage may be measured during periods C and D to obtain the temperature information Tj, similar to the embodiment in FIG. 39. Reference numeral 124a denotes the switch circuit 124a of the switch circuit board 201b, and 124b denotes the switch circuit 124b of the switch circuit board 201a.

[0693] 40(a), while the V0 voltage is being applied, the transistor 117 is in the off state, and while the V1 voltage or the V2 voltage is being applied, the transistor 117 is in the on state.

[0694] As shown in Fig. 39(a), the embodiment of Fig. 39 is an embodiment in which there are periods in which the V2 voltage is applied to two points, whereas in Fig. 40, the V2 voltage is applied to one point during the tn1 period.

[0695] The change from voltage V1 to voltage V2 (t5) does not need to be a step change, and for example, the voltage may be changed smoothly from voltage V1 to voltage V2 from t4 to t6.

[0696] The test current Id is supplied to the transistor 117 by turning on the switch circuit 124a, and the charge between the channels of the transistor 117 is discharged by turning on the switch circuit 124b.

[0697] Switch circuit 124b is turned on before switch circuit 124a is turned on and test current Id is supplied to transistor 117. When switch circuit 124b is turned on, the charge between the channels of transistor 117 is discharged. When switch circuit 124b is turned on, both terminals (output terminal and setting terminal, etc.) of power supply device 132 are short-circuited, and the charge between both terminals of the power supply device is discharged. Also, a short-circuit current Im flows.

[0698] After the switch circuit 124b is turned on, the switch circuits 124a and the like are turned on after a period tb2 has elapsed, and the test current Id is supplied to the transistor 117. After the switch circuit 124a is turned on, the switch circuit 124b is turned off after a period tb1 has elapsed.

[0699] When an on-voltage (V1 voltage, V2 voltage) is applied to the gate terminal of transistor 117, transistor 117 turns on. Even if transistor 117 turns on, test current Id will not flow unless switch circuit 124a is on and switch circuit 124b is off. Therefore, after switch circuit 124b turns off at t2, test current Id flows.

[0700] Even if an on-voltage (V1 voltage or V2 voltage) is applied to the gate terminal of the transistor 117 and the transistor 117 is turned on, the test current Id does not flow unless the switch circuit 124a is turned on.

[0701] Therefore, the gate signal voltage Vg does not need to be set to the V1 voltage at t0. It may be set to the V1 voltage te time earlier. In other words, the gate signal voltage Vg may be set at any time before the time t2 at which the switch circuit 124b is turned off. The time (timing) at which the gate signal voltage Vg changes from the V0 voltage to the V1 voltage can be set and varied by the controller circuit 111.

[0702] At time t0, the Vg voltage is set to the V1 voltage. The V1 voltage is applied to the gate terminal of the transistor 117, and at t2, after a period tc, a current Id is supplied to the transistor 117. Next, the switch circuit 124b turns on during the period from t4 to t6, shorting the channel of the transistor 117 and discharging the charge.

[0703] At t5, the Vsg voltage becomes the V2 voltage, which is applied to the gate terminal of the transistor 117, turning the transistor 117 on strongly (when V2 is a voltage higher than V1).

[0704] Switch circuit 124b turns on before switch circuit 124a turns off. When switch circuit 124b turns on, the output terminals of power supply device 132 are short-circuited, a short-circuit current Im flows, and the charge between the channels of transistor 117 is discharged.

[0705] The switch circuit 124b is turned on at t4 and off at t6. The switch circuit 124a is controlled to change from the on state to the off state during the period from t4 to t6. The test current Id flows through the transistor 117 when the switch circuit 124a is on and the switch circuit 124b is off.

[0706] The switch circuit 124b turns on before the switch circuit 124a turns off (ta2). After the switch circuit 124a turns off (ta2), the switch circuit 124b turns off after a period t1a.

[0707] During the period from t4 to t6, the switch circuit 124a is in the OFF state. During the period from t4 to t6, the gate signal voltage changes from the V1 voltage to the V2 voltage. The V2 voltage is during the tn1 period. During the tn1 period, a constant current Ic is applied to the transistor 117, and the voltage Vi between the channels of the transistor 117 is measured or acquired. As an example, the constant current Ic is applied (supplied) during the period tk from t6 to t7. The constant current Ic is output from the constant current circuit 118, and the magnitude of the constant current Ic can be set or changed by the controller circuit 111.

[0708] While the constant current Ic is being applied, a voltage V2 is applied to the gate terminal g. While the constant current Ic is being applied, the channel-to-channel voltage Vi of the transistor 117 is measured. The voltage Vi is buffered by a buffer circuit 116, and the temperature measurement circuit 115 uses the voltage Vi to transfer temperature information Tj to the controller circuit 111. The controller circuit 111 stops, continues, or changes the settings of the semiconductor device testing equipment based on the rate and change of the Tj data.

[0709] A constant current Ic is applied while a voltage, such as V2, that turns on the transistor 117 is applied. The constant current Ic flows between the channels, generating a voltage between the channels. The voltage generated between the channels changes depending on the deterioration state of the transistor.

[0710] A constant current Ic for obtaining temperature information Tj is applied to the transistor 117 for a period tk. The temperature measurement circuit 115 processes the temperature information Tj from the inter-terminal voltage Vi obtained during the application period of the constant current Ic.

[0711] The tf1 period is set to a period of 2 ms or less. Preferably, the tc period, the ta2 period, and the ta1 period are each set to a period of 1 ms or less. When the test current Id is applied, the transistor 117 generates heat and its temper...

Claims

[Claim 1] a flexible conductor connected to a first terminal of a semiconductor element and disposed on the bottom side of the test element; a first power supply wiring connected to the flexible conductor; a connecting fitting connected to a second terminal of the semiconductor element; a second power supply wiring connected to the connector; a first connection member connected to the first power supply wiring; A semiconductor device testing apparatus comprising: a second connection member connected to the second power supply wiring.

Images