Magnetic memory

Abstract

To provide a magnetic memory capable of writing data efficiently.SOLUTION: A magnetic memory comprises a plurality of cylindrical first magnetic members having a first end and a second end extending along a first direction. A plurality of second magnetic members are provided corresponding to the plurality of first magnetic members and extend from inside the tubes at the second end side of the plurality of first magnetic members along the first direction. A plurality of third magnetic members are provided above the plurality of second magnetic members corresponding to the plurality of first magnetic members, and electrically isolated from the plurality of second magnetic members. A plurality of first wiring lines extend along a second direction crossing the first direction, are arranged adjacent to each other in a third direction crossing both the first and second directions, and are electrically connected to the plurality of third magnetic members arranged in the second direction. A fourth magnetic member is provided around the second ends of the plurality of first magnetic members and electrically isolated from the plurality of second and third magnetic members. A plurality of second wiring lines are provided on the first end side of the first magnetic members.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present embodiment relates to a magnetic memory. [Background technology]

[0002] Magnetic memories have been developed that move (shift) the domain walls of a magnetic material by passing an electric current through the magnetic material. In such magnetic memories, data is written to the magnetic material by passing an electric current through a field line and using the magnetic field generated by this electric current. However, it has been difficult to write data efficiently in such magnetic memories. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] U.S. Patent Publication No. 2022 / 0108738 [Patent Document 2] U.S. Patent Publication No. 2022 / 0076723 [Patent Document 3] U.S. Patent Publication No. 2023 / 0180484 Summary of the Invention [Problem to be solved by the invention]

[0004] To provide a magnetic memory in which data can be written efficiently. [Means for solving the problem]

[0005] The magnetic memory according to this embodiment includes a plurality of cylindrical first magnetic members extending along a first direction and having first and second ends. The plurality of second magnetic members are provided corresponding to the plurality of first magnetic members and extend from within the cylinder toward the second ends of the plurality of first magnetic members along the first direction. The plurality of third magnetic members are provided above the plurality of second magnetic members corresponding to the plurality of first magnetic members and are electrically isolated from the plurality of second magnetic members. The plurality of first wirings extend along a second direction intersecting the first direction, are arranged adjacent to each other in a third direction intersecting the first and second directions, and are electrically connected to the plurality of third magnetic members arranged in the second direction. The fourth magnetic member is provided around the second ends of the plurality of first magnetic members and is electrically isolated from the plurality of second and third magnetic members. The plurality of second wirings are provided on the first end side of the first magnetic members. [Brief explanation of the drawings]

[0006] [Figure 1] FIG. 1 is a plan view showing an example of the configuration of a magnetic memory according to a first embodiment. [Figure 2] FIG. 2 is a cross-sectional view taken along line AA shown in FIG. [Figure 3] FIG. 1 is a perspective view showing a configuration example of a magnetic memory according to a first embodiment. [Figure 4] FIG. 3 is a cross-sectional view showing an example of the configuration of a magnetic member. [Figure 5] 4 is a cross-sectional view showing an example of the configuration around the second end of the magnetic member and the pole. FIG. [Figure 6] FIG. 2 is a perspective view showing a configuration example of a pole according to the first embodiment. [Figure 7] FIG. 2 is an equivalent circuit diagram of the magnetic memory according to the first embodiment. [Figure 8] FIG. 10 is a plan view showing a configuration example of a magnetic memory according to a second embodiment. [Figure 9] FIG. 9 is a cross-sectional view taken along line AA shown in FIG. 8. [Figure 10] FIG. 10 is a cross-sectional view showing a configuration example of a magnetic memory according to a third embodiment. [Figure 11] FIG. 10 is a cross-sectional view showing a configuration example of a magnetic memory according to a fourth embodiment. [Figure 12]FIG. 10 is a perspective view showing a configuration example of a magnetic memory according to a fourth embodiment. [Figure 13] FIG. 10 is a cross-sectional view showing a configuration example of a magnetic memory according to a fifth embodiment. [Figure 14] FIG. 13 is a cross-sectional view showing a configuration example of a magnetic memory according to a sixth embodiment. [Figure 15] FIG. 13 is a cross-sectional view showing a configuration example of a magnetic memory according to a seventh embodiment. [Figure 16] FIG. 13 is a plan view showing a configuration example of a magnetic memory according to a seventh embodiment. [Figure 17] FIG. 13 is a cross-sectional view showing a configuration example of a magnetic memory according to an eighth embodiment. [Figure 18] FIG. 13 is a plan view showing a configuration example of a magnetic memory according to an eighth embodiment. [Figure 19] FIG. 13 is a cross-sectional view showing a configuration example of a magnetic memory according to a ninth embodiment. [Figure 20] FIG. 13 is a plan view showing a configuration example of a magnetic memory according to a ninth embodiment. [Figure 21] FIG. 23 is a plan view showing a configuration example of a magnetic memory according to a tenth embodiment. [Figure 22] FIG. 23 is a plan view showing a configuration example of a magnetic memory according to an eleventh embodiment. [Figure 23] FIG. 29 is a plan view showing a configuration example of a magnetic memory according to a twelfth embodiment. [Figure 24] FIG. 23 is a plan view showing a configuration example of a magnetic memory according to a thirteenth embodiment. [Figure 25] FIG. 23 is a plan view showing a configuration example of a magnetic memory according to a fourteenth embodiment. [Figure 26] FIG. 23 is a plan view showing a configuration example of a magnetic memory according to a fifteenth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The present invention is not limited to the embodiment. The drawings are schematic or conceptual. In the specification and drawings, the same elements are designated by the same reference numerals.

[0008] (First embodiment) Fig. 1 is a plan view showing a configuration example of a magnetic memory according to a first embodiment, Fig. 2 is a cross-sectional view taken along line AA shown in Fig. 1, and Fig. 3 is a perspective view showing a configuration example of a magnetic memory according to the first embodiment.

[0009] As shown in FIG. 1, the magnetic memory of the first embodiment has memory sections 10 arranged in m rows and n columns, where m and n are natural numbers. ij (i=1 to m, j=1 to n). In FIG. 1, the memory unit 10 is arranged in 3 rows and 5 columns. 11 ~10 35 In FIG. 3, row numbers and column numbers are omitted.

[0010] i-th row memory section 10 i1 ~10 in represents the bit line BL extending in the x direction. i , and the first end 11a is disposed along the bit line BL i In this specification, "A and B are electrically connected" means that A and B may be directly connected or indirectly connected via a conductor. i1 ,10 i3 , and the even-numbered column memory section 10 i2 ,10 i4 , ··· are arranged shifted in the vertical direction (y direction) on the paper surface. For example, i2 is the odd-numbered column memory section 10 i1 and memory section 10 i3 and are arranged to be shifted in the -y direction. By using such an arrangement, a plurality of memory units can be arranged densely, and integration can be achieved.

[0011] A plurality of poles 25a are connected to a plurality of memory units 10 11 ~10 mn As shown in FIG. 2, the plurality of poles 25a are provided in correspondence with the memory unit 10. 11 ~10 mn Magnetic material ML 11 ~ML mnThe poles 25a are arranged along the z direction and are partially inserted into the cylinder from the end 11b side. 11 ~ML mn Each pole 25a extends from the inside of the cylinder on the end 11b side to the outside of the cylinder. ij The inner diameter of the nozzle may be a substantially cylindrical shape having a diameter slightly smaller than the inner diameter of the nozzle.

[0012] The pole 25a is made of a magnetic material, for example, a 3d transition metal (for example, any one of Fe, Co, and Ni) or an alloy containing these.

[0013] 2, insulating layers 26 are provided on the plurality of poles 25a in correspondence with each of the plurality of poles 25a. The insulating layers 26 are provided between the plurality of poles 25a and the plurality of poles 25b to electrically isolate the poles 25a from the poles 25b. The insulating layers 26 are made of an insulating material such as a silicon oxide film.

[0014] As shown in FIG. 1 or 2, a plurality of poles 25b are connected to a plurality of memory units 10. 11 ~10 mn The plurality of poles 25b are provided corresponding to the magnetic members ML 11 ~ML mn and are provided above (in the +z direction) the poles 25a. The poles 25b are electrically isolated from the corresponding poles 25a by an insulating layer 26. As shown in FIG. 6, each pole 25b is, for example, a substantially rectangular parallelepiped. In a plan view seen from the z direction, the poles 25b may be slightly smaller than the inner diameter of the pole 25a and may be located inside the outer edge of the pole 25a. However, this is not limiting, and the poles 25b may be larger than the inner diameter of the pole 25a and may protrude outside the pole 25a.

[0015] The pole 25b is made of a magnetic material, for example, a 3d transition metal (for example, any one of Fe, Co, and Ni) or an alloy containing these.

[0016] As shown in Figure 1, the pole line PLL connected to the polej (j=1 to n) extend along the y direction that intersects the z direction and the x direction, and are arranged adjacent to each other in the x direction. j is a plurality of memory units 10 arranged in the y direction. ij In plan view from the z direction, the pole line PLL j represents the bit line BL extending in the x direction. i Intersects with each pole line PLL j is connected at both ends to the control circuit 100, and the pole line PLL j The bit lines BL i The pole line PLL is also connected to and controlled by the control circuit 100. j may extend along the x direction and be arranged adjacent to each other in the y direction.

[0017] Pole Line PLL j is the memory unit 10 arranged in the j-th column. 1j ~10 mj That is, a plurality of pole lines PLL1 to PLL n are the magnetic members ML 11 ~ML m1 , magnetic member ML 12 ~ML m2 , magnetic member ML 13 ~ML m3 ,...Magnetic member ML 1n ~ML mn It supports memory 10 1j ~10 mj is a pole line PLL j In a plan view seen from the z direction, the memory unit 10 1j ~10 mj is a pole line PLL j As shown in Figures 2 and 3, the pole-line PLL j is the memory unit 10 of the jth column. i It is placed above (+z direction) the pole line PLL. j is the memory section 10 1j ~10 mjThe contacts are made with the upper surfaces F25b1 in the +z direction of the corresponding poles 25b.

[0018] For example, the memory unit 10 arranged in the second column 12 ~10 m2 As shown in FIGS. 2 and 3, the memory unit 10 12 ~10 m2 is located below the pole line PLL2, and the pole line PLL2 is located below the memory section 10 of the second column. 12 ~10 m2 In a plan view seen from the z direction, the pole line PLL2 is arranged above the memory section 10 of the second column. i2 Therefore, the pole line PLL2 is arranged so as to overlap with each of the memory units 10 12 ~10 m2 The contacts are made with the upper surfaces F25b1 in the +z direction of the corresponding poles 25b.

[0019] As shown in Figure 2, the pole-line PLL j is the memory section 10 ij The pole line PLL is provided on the second end 11b side. j is electrically connected to the pole 25b, but the pole 25a and the memory section 10 ij It is electrically isolated from the pole line PLL. j Heavy metals and topological materials that exhibit the SOT (Spin-Orbit-Torque) effect are used for this purpose, specifically W, Ta, Pt, Pd, Hf, Ir, Re, Ag, Au, Bi, Sb, Se, Te, Mo, and alloys and compounds containing these elements.

[0020] The plate electrode PL is connected to a plurality of magnetic members ML 11 ~ML mn The plate electrode PL is provided around the end 11b of the magnetic member ML and is electrically isolated from the pole 25b. 11 ~ML mn The plate electrode PL extends two-dimensionally in the xy plane, and is electrically connected in common to the end portions 11b of the plurality of magnetic members ML11 ~ML mn The plate electrode PL is made of, for example, a magnetic material such as Fe, Co, or Ni, or an alloy containing these, or a conductive metal material such as W, Cu, or Pt, or an alloy containing these.

[0021] Each memory unit 10 ij As shown in FIGS. 2 and 3, the magnetic memory line (magnetic member) ML ij and the non-magnetic conductive layer 12 ij and the magnetoresistive element 14 ij and the non-magnetic conductive layer 16 ij and vertical thin film transistor 18 ij and the non-magnetic conductive layer 19 ij It is equipped with the following.

[0022] Each magnetic member ML ij Each magnetic member ML is made of a perpendicular magnetic material extending in the vertical direction (z direction) in FIGS. 2 and 3 and has a cylindrical shape. ij The memory unit 10 has a first end 11a and a second end 11b. ij The shape may be substantially cylindrical as shown in FIG. 1, or may be substantially rectangular.

[0023] FIG. 4 shows the magnetic member ML ij 1 is a cross-sectional view showing an example of the configuration of each magnetic member ML. ij A non-magnetic insulator 50 may be provided inside the cylinder. ij The magnetic member ML may be provided so as to surround the non-magnetic insulator 50. ijIn the example shown in FIG. 4, region 11c1, necked portion 11d1, region 11c2, and necked portion 11d2 are arranged along the z direction. In a cross section of region 11c1 taken along the z direction, the length (diameter) between end 11c1a and end 11c1b of region 11c1 in the x direction is defined as d1. In a cross section of necked portion 11d1 taken along the z direction, the length (diameter) between end 11d1a and end 11d1b of necked portion 11d1 in the x direction is defined as d2. In a cross section of region 11c2 taken along the z direction, the length (diameter) between end 11c2a and end 11c2b of region 11c2 in the x direction is defined as d3. In a cross section of necked portion 11d2 taken along the z direction, the length (diameter) between end 11d2a and end 11d2b of necked portion 11d2 in the x direction is defined as d4. In this case, the following conditions are met: d1>d2 d1>d4 d3>d2 d3>d4

[0024] Referring again to Figure 2, the magnetic member ML ij The first end 11a is connected to the nonmagnetic conductive layer 12. ij via the magnetoresistive element 14 ij The non-magnetic conductive layer 12 is electrically connected to the ij In this case, the magnetic member ML ij The first end 11a of the magnetoresistive element 14 ij The magnetic member ML is directly connected to the ij The bit line BL is provided on the first end 11a side of the bit line BL. n They extend in the x direction, which intersects with the direction in which they extend, and are arranged in the y direction.

[0025] FIG. 5 shows the magnetic member ML ij 1 is a cross-sectional view showing an example of the configuration of the second end 11b and the periphery of the pole of each magnetic member ML. ij The second end 11b of the electrode 11 is electrically connected to the plate electrode PL. The side surface of the plate electrode PL faces the side surface of the pole 25a. On the pole 25a, an insulating layer 26, a pole 25b, and pole lines PLL1 to PLL nThe poles 25a and 25b are arranged such that, in a plan view seen from the z direction, a plurality of memory units 10 are arranged as shown in FIG. ij The poles 25a and 25b are provided in correspondence with the magnetic members ML ij The magnetic member ML ij and magnetically connected to each other. Here, "A is magnetically connected to B" means that A and B form a magnetic circuit, and includes cases where the magnetic bodies are not in direct contact with each other. Insulating layer 26 is disposed between pole 25a and pole 25b, and electrically separates pole 25a from pole 25b while magnetically connecting them.

[0026] A magnetic gap Δ is provided between the plate electrode PL and the pole 25a. For example, the magnetic gap Δ is about 5 nm. To increase the write magnetic field generated in the magnetic gap Δ, it is desirable that the plate electrode PL be made of a magnetic material. ij The second end 11b of each of the magnetic poles 11a and 11b is provided in the magnetic gap Δ between the corresponding plate electrode PL and the pole 25a, and is sandwiched between the plate electrode PL and the pole 25a. The pole 25a is connected to the corresponding magnetic member ML. ij The magnetic member ML is inserted into the cylinder through the opening of the second end 11b. ij The pole 25a and the magnetic member ML are opposed to the inner surface of the second end 11b. ij A thin insulating layer (for example, an MgO film) (not shown) may be provided between the pole 25a and the magnetic member ML in order to maintain a withstand voltage. ij However, they may be electrically connected as long as they can maintain a withstand voltage.

[0027] Magnetic Materials ML ij A non-magnetic conductive layer 28 is disposed on the outer surface of the plate electrode PL. The plate electrode PL is electrically connected to the magnetic members MLij via the conductive layer 28. The conductive layer 28 is ij The magnetic member ML is disposed between the outer surface of the magnetic member ML and the plate electrode PL. ijThe sum of the thickness of the conductive layer 28 in the x direction and the thickness of the conductive layer 28 in the x direction substantially corresponds to the magnetic gap Δ. The conductive layer 28 is made of a heavy metal or a topological material that exhibits the SOT (Spin-Orbit-Torque) effect. Specifically, W, Ta, Pt, Pd, Hf, Ir, Re, Ag, Au, Bi, Sb, Se, Te, Mo, or an alloy or compound containing these elements is used. The conductive layer 28 is made of a magnetic material ML ij It may be disposed between the inner surface of the pole 25a and the pole 25b.

[0028] 6 is a perspective view showing an example of the configuration of the pole according to the first embodiment. The pole 25a is, for example, substantially cylindrical and has a diameter slightly smaller than the inner diameter of the magnetic member ML in a plan view seen from the z direction. The pole 25b is, for example, substantially rectangular parallelepiped.

[0029] 2 and 3, the magnetic memory of this embodiment will be further described. ij is the magnetic material ML ij The magnetoresistive element 14 is used to read information written in the magnetoresistive element 14, and for example, an MTJ (Magnetic Tunnel Junction) element is used. ij The following explanation will be given assuming that the MTJ element is MTJ element 14. ij The MTJ element 14 includes a free layer (magnetic free layer) 14a whose magnetization direction is variable, a fixed layer (reference layer) 14c whose magnetization direction is fixed, and a non-magnetic insulating layer 14b disposed between the free layer 14a and the fixed layer 14c. ij In the figure, the free layer 14a is connected to the corresponding nonmagnetic conductive layer 12 ij Magnetic material ML via ij The pinned layer 14c is electrically connected to the first end 11a of the corresponding non-magnetic conductive layer 16. ij Through the corresponding vertical thin film transistor 18 ij Here, "the magnetization direction is variable" means that in a read operation described later, the corresponding magnetic member ML ij The magnetization direction is fixed when the magnetic field generated by the magnetic material ML is changed. ijThis means that the magnetization direction does not change due to the leakage magnetic field from the

[0030] Vertical thin film transistors as switching elements18 ij One end of the non-magnetic conductive layer 16 ij MTJ element 14 via ij The other end is electrically connected to the fixed layer 14c of the non-magnetic conductive layer 19. ij via the bit line BL i That is, each transistor 18 ij MTJ element 14 ij and bit line BL i Transistor 18 is connected between ij The channel layer 18a extends in the z direction, and the gate electrode portion SG is disposed so as to surround or sandwich the channel layer 18a. j That is, the gate electrode portion SG j The gate electrode portion SG covers at least a part of the channel layer. The channel layer 18a is made of, for example, crystalline silicon. j extends along the y direction and is connected to and controlled by the control circuit 100.

[0031] (write operation) Next, the write operation of the magnetic memory according to this embodiment will be described.

[0032] 7 is an equivalent circuit diagram of the magnetic memory according to the first embodiment. 1j ~10 mj The operation of selectively writing data to the memory cell will now be described.

[0033] The magnetic memory according to this embodiment uses the SOT (Spin-Orbit Torque) effect to reverse the magnetization of the pole 25b and indirectly store data in the memory unit 10. 1j ~10 mjThe SOT effect occurs when a write current is passed through a stacked structure of non-magnetic and magnetic materials. Polarized spins accumulate in the magnetic material, and the angular momentum of the spins is transferred to the magnetization, causing a torque to act on the magnetization of the magnetic material. Changing the direction of the current reverses the direction of the torque, reversing the magnetization of the magnetic material in the opposite direction. To cause this magnetization reversal, it is effective to apply an assist magnetic field parallel to the write current during writing. The assist magnetic field may be an induced magnetic field generated by a current flowing through a separately provided wiring, or a leakage magnetic field from a nearby magnetic body.

[0034] In this embodiment, the control circuit 100 controls the write current to one of the pole lines PLL j At this time, the selected pole line PLL j The magnetization direction of the plurality of poles 25b connected to the selection pole line PLL j The magnetization of the pole 25b influences the pole 25a magnetically connected thereto via the insulating layer 26, and sets the magnetization of the pole 25a in the same direction. The magnetization of the pole 25a is also influenced by the magnetic member ML 1j ~ML mj 25a and the second end 11b of the magnetic member ML 1j ~ML mj In this way, by controlling the magnetization direction of the pole 25a through the magnetization reversal of the pole 25b, data of different logics can be stored in the memory section 10. 1j ~10 mj can be written to.

[0035] Here, as shown in FIG. 5, the magnetization of the pole 25b is transferred to the pole 25a, but the pole 25a is connected to the pole 25b and the pole line PLL. j The pole line PLL is electrically isolated from the j The capacitance of the poles 25a and the magnetic member ML is added to the capacitance of the poles 25b connected thereto. 1j ~MLmj No additional capacitance is added. j The capacitance of the pole line PLL can be kept relatively small by the insulating layer 26. j If the capacitance is small, the pole line PLL j This reduces the amount of charge required to drive the voltage, thereby reducing the load and power consumption of the control circuit 100. j This increases the voltage driving speed and increases the data writing speed.

[0036] In one write operation, a plurality of magnetic members ML arranged in one row are 1j ~ML mj For example, the control circuit 100 writes one piece of data ("0" or "1") to all m magnetic members ML arranged in j columns. 1j ~ML mj Then, the control circuit 100 writes data "1" to the magnetic domain of the second end 11b of the gate electrode portion SG j Turn on transistor 18 1j ~18 mj The control circuit 100 turns on the memory unit 10. 1j ~10 mj Among them, for one or more memory units 10 that should store data "1", a shift current is selectively passed between the plate electrode PL and the bit line BL corresponding to each memory unit 10. This moves the data "1" to the MTJ element 14 side. When there are multiple memory units 10 that should store data "1", the control circuit 100 executes the above-mentioned shift operation of data "1" for each memory unit 10. As a result, the data "1" is shifted to the magnetic member ML 1j ~ML mj are shifted to and stored in desired magnetic domains of one or more magnetic members ML.

[0037] Next, the control circuit 100 reads all m memory units 10 arranged in j columns. 1j ~10 mj Then, the control circuit 100 writes data "0" to the magnetic domain of the second end 11b of the gate electrode portion SGj Turn on transistor 18 1j ~18 mj The control circuit 100 turns on the memory unit 10. 1j ~10 mj Among these, for one or more memory units 10 that should store data "0", a shift current is selectively passed between the plate electrode PL and the bit line BL corresponding to each memory unit 10. This moves the data "0" to the MTJ element 14 side. When there are multiple memory units 10 that should store data "0", the control circuit 100 executes the above-mentioned shift operation of data "0" for each memory unit 10. As a result, the data "0" is shifted to the magnetic member ML 1j ~ML mj are shifted to and stored in desired magnetic domains of one or more magnetic members ML.

[0038] By the above two operations, the memory units 10 arranged in the jth column 1j ~10 mj In one write operation, the write operation to the plurality of memory units 10 arranged in one column is completed. 1j ~10 mj By simultaneously writing data to the multiplexed data bits, the write power consumption per bit can be reduced.

[0039] (Read operation) Next, the read operation will be described. For example, the memory unit 10 ij When reading data from the memory unit 10, the data to be read is ij Magnetic material ML ij the bottom of the MTJ element 14 ij When the MTJ element 14 is located in the magnetic domain closest to the ij The magnetization direction of the free layer 14a of the magnetic member ML ij Therefore, the control circuit 100 controls the direction of the plate electrode PL and the bit line BL i A read current is passed between the MTJ element 14 ij The data is read from the MTJ element 14. ijFor example, the resistance state of the MTJ element 14 ij When the resistance of the MTJ element 14 is high, the resistance of the MTJ element 14 is higher than when the resistance is low. ij This corresponds to a state in which the magnetization directions of the free layer 14a and the fixed layer 14c are closer to antiparallel (for example, 90 degrees or more). ij When the resistance of the MTJ element is low, the resistance of the MTJ element is ij This corresponds to a state in which the magnetization directions of the free layer 14a and the fixed layer 14c are closer to parallel (for example, 90 degrees or less).

[0040] The data to be read is stored in memory section 10. ij Magnetic material ML ij If the control circuit 100 does not exist at the bottom of the plate electrode PL and the bit line BL i A shift current is passed between the magnetic member ML ij Then, the control circuit 100 performs the read operation described above to read the data.

[0041] As described above, according to this embodiment, the pole 25a is electrically isolated from the pole 25b and the pole line PLL by the insulating layer 26. This allows the path of the write current to be separated from the path of the shift current or read current. Therefore, the capacitance of the pole line PLL is relatively small due to the insulating layer 26, and the amount of charge required to drive the voltage of the pole line PLL is small. This reduces the load and power consumption of the control circuit 100. Furthermore, the driving speed of the voltage of the pole line PLL is increased, and the data writing speed is also increased.

[0042] The pole 25a is electrically isolated from the pole 25b and the pole line PLL by the insulating layer 26, but is magnetically connected to them. Therefore, when a write current is passed through the pole line PLL, the magnetization of the pole 25b is set in the pole 25b due to the SOT effect, depending on the direction of the write current. Furthermore, the magnetization of the pole 25b is transferred from the pole 25b to the pole 25a, and from the pole 25a to the magnetic member ML ijThat is, in the magnetic memory according to this embodiment, when a write current is passed through the pole line PLL, the magnetic member ML is written to the second end 11b of the pole line PLL by the SOT effect. ij Therefore, data can be written efficiently to the second end 11b.

[0043] (Second embodiment) Fig. 8 is a plan view showing a configuration example of a magnetic memory according to the second embodiment. Fig. 9 is a cross-sectional view taken along the line AA shown in Fig. 8. In the second embodiment, the pole lines PLL1 to PLL n are in contact with the X-direction side surfaces F25b2 of the plurality of poles 25b arranged in the y-direction. n By providing the pole 25b on the side surface F25b2, the write current is supplied to the pole lines PLL1 to PLL n When the current flows through the pole lines PLL1 to PLL25b, the magnetization occurring in the pole 25b may be optimized. n may contact the side surface F25b2 of the pole 25b in the +X direction, or may contact the side surface in the opposite -X direction.

[0044] Other configurations of the second embodiment may be the same as those of the first embodiment, and therefore the second embodiment can achieve the same effects as the first embodiment.

[0045] (Third embodiment) 10 is a cross-sectional view showing an example of the configuration of a magnetic memory according to the third embodiment. The cross-sectional view of Fig. 10 corresponds to the cross section taken along line AA in Fig. 1 or Fig. 8. In the third embodiment, pole lines PLL1 to PLL n In this way, the pole lines PLL1 to PLL2 are in contact with both the upper surfaces F25b1 and the side surfaces F25b2 of the plurality of poles 25b arranged in the y direction. n are provided on the top surface F25b1 and the side surface F25b2 of the pole 25b, so that the write current is supplied to the pole lines PLL1 to PLL n The magnetization generated in the pole 25b when a current is applied to the pole 25b is set.

[0046] The pole lines PLL on the top surface F25b1 and the side surface F25b2 of each pole 25 may be electrically isolated from each other or may be electrically connected to each other.

[0047] Other configurations of the third embodiment may be the same as those of the first or second embodiment, so the third embodiment can achieve the same effects as the first or second embodiment.

[0048] (Fourth embodiment) Fig. 11 is a cross-sectional view showing an example of the configuration of a magnetic memory according to the fourth embodiment. The cross-sectional view of Fig. 11 corresponds to a cross section taken along line AA in Fig. 1 or Fig. 8. Fig. 12 is a perspective view showing an example of the configuration of a magnetic memory according to the fourth embodiment.

[0049] In the fourth embodiment, plate electrodes PL1 and PL2 and via contacts Vpl are provided.

[0050] The plate electrode PL1 may have the same configuration as the plate electrode PL in the first to third embodiments.

[0051] The plate electrode PL2 is connected to the plate electrode PL1, the poles 25a and 25b, and the pole lines PLL1 to PLL n Above (+z direction), that is, magnetic member ML ij The plate electrode PL2 is located in a direction away from the poles 25a and 25b and the pole lines PLL1 to PLL2. The plate electrode PL2 is electrically connected to the plate electrode PL1 through the via contact Vpl. The plate electrode PL2 is located in a direction away from the poles 25a and 25b and the pole lines PLL1 to PLL n The plate electrode PL2 is electrically isolated from the plurality of magnetic members ML 11 ~ML mn The plate electrode PL2 is provided in common to the plurality of magnetic members ML and is electrically connected to their ends 11b. 11 ~ML mnThe plate electrode PL2 serves as a common electrode for the plate electrode PL1. The plate electrode PL2 extends two-dimensionally in the xy plane, which is different from the plate electrode PL1. The plate electrode PL2 may be made of a conductive material having a lower resistance than the conductive material of the plate electrode PL1, such as a conductive metal material such as W, Cu, or Pt. The plate electrode PL2 may also be made of a magnetic material such as Fe, Co, or Ni, or an alloy containing any of these.

[0052] The via contact Vpl is provided between the plate electrodes PL1 and PL2 and electrically connects the plate electrodes PL1 and PL2. The via contact Vpl is provided to penetrate the interlayer insulating film between the plate electrodes PL1 and PL2 in the z-direction. The via contact Vpl is made of a conductive metal material such as tungsten.

[0053] The provision of the plate electrode PL2 can substantially reduce the electrical resistance of the plate electrode PL1, and therefore the fourth embodiment is advantageous when the resistance of the plate electrode PL1 is high.

[0054] Other configurations of the fourth embodiment may be the same as those of the first embodiment. As a result, the fourth embodiment can achieve the same effects as the first embodiment. The fourth embodiment may also be combined with the second or third embodiment. In this case, the fourth embodiment can achieve the same effects as the second or third embodiment.

[0055] (Fifth embodiment) FIG. 13 is a cross-sectional view showing a configuration example of a magnetic memory according to a fifth embodiment. The cross-sectional view of FIG. 13 corresponds to a cross section taken along line AA in FIG. 1 or FIG. 8. The fifth embodiment is a combination of the second and fourth embodiments. Therefore, the magnetic memory according to the fifth embodiment includes plate electrodes PL1 and PL2 and via contacts Vpl. Furthermore, pole lines PLL1 to PLL n is provided on the side surface F25b2 of the pole 25b.

[0056] Other configurations of the fifth embodiment may be the same as those of the first embodiment, so the fifth embodiment can obtain the same effects as the second and fourth embodiments.

[0057] (Sixth embodiment) FIG. 14 is a cross-sectional view showing a configuration example of a magnetic memory according to a sixth embodiment. The cross-sectional view of FIG. 14 corresponds to a cross section taken along line AA in FIG. 1 or FIG. 8. The sixth embodiment is a combination of the third and fourth embodiments. Therefore, the magnetic memory according to the sixth embodiment includes plate electrodes PL1 and PL2 and via contacts Vpl. Furthermore, pole lines PLL1 to PLL n are provided on both the top surface F25b1 and the side surface F25b2 of the pole 25b.

[0058] Other configurations of the sixth embodiment may be the same as those of the first embodiment, so the sixth embodiment can obtain the same effects as the third and fourth embodiments.

[0059] (Seventh embodiment) Fig. 15 is a cross-sectional view showing a configuration example of a magnetic memory according to a seventh embodiment. Fig. 16 is a plan view showing a configuration example of a magnetic memory according to a seventh embodiment. Fig. 15 shows a cross section taken along line BB in Fig. 16.

[0060] In the seventh embodiment, two poles 25b and 25c are provided above one pole 25a. The pole 25c is provided adjacent to the pole 25b in the X direction.

[0061] The plurality of poles 25c, like the plurality of poles 25b, are connected to the plurality of memory units 10. 11 ~10 mn The plurality of poles 25c are provided corresponding to the magnetic members ML 11 ~ML mn, and are provided above the pole 25a (in the +z direction). The multiple poles 25c are electrically isolated from the corresponding multiple poles 25a by the insulating layer 26. Each pole 25c is also electrically isolated from the adjacent multiple poles 25b by an interlayer insulating film (not shown). The shape and material of the pole 25c may be the same as those of the pole 25b. As shown in FIG. 16, in a plan view, the poles 25b and 25c are arranged on both sides of the insulating layer 26 (or the magnetic member ML) in the X direction.

[0062] In addition, a plurality of pole lines PLLa are connected to a plurality of memory units 10 11 ~10 mn The pole line PLLa is provided corresponding to the poles 25b. The pole line PLLa is in contact with the side surfaces F25b2 in the X direction of the plurality of poles 25b arranged in the y direction. By providing the pole line PLLa on the side surfaces F25b2 of the poles 25b in this way, the magnetization generated in the poles 25b when a write current is passed through the pole line PLLa may be optimized.

[0063] In addition, the plurality of pole lines PLLb are connected to the plurality of memory units 10 in the same manner as the plurality of pole lines PLLa. 11 ~10 mn16, the pole lines PLLa and PLLb are disposed on opposite sides of the insulating layer 26 (or the magnetic member ML) in the X direction. The pole lines PLLb extend along the Y direction and are arranged adjacent to the pole line PLLa. The pole lines PLLb are in contact with the X-direction side surfaces F25c2 of the poles 25c arranged in the y direction. The pole lines PLLb are electrically connected to the corresponding poles 25c. On the other hand, the pole lines PLLb are electrically isolated from the pole lines PLLa and the poles 25b. As shown in FIG. 16, in a plan view, the pole lines PLLa and PLLb are disposed on both sides of the insulating layer 26 (or the magnetic member ML) in the X direction. The pole lines PLLa and PLLb are disposed outside the poles 25b and 25c as viewed from the insulating layer 26 (or the magnetic member ML). That is, the pole lines PLLa and PLLb are in contact with the outer surfaces (F25b2, F25c2) of the poles 25b and 25c facing away from each other. Other configurations of the seventh embodiment may be the same as those of the second embodiment.

[0064] In this way, not only the pole 25b and the pole line PLLa but also the pole 25c and the pole line PLLb may be provided for each pole 25a, so that when a write current is passed through the pole lines PLLa and PLLb, data can be efficiently written to the second end 11b of the magnetic member ML due to the SOT effect.

[0065] Furthermore, the currents flowing through the pole lines PLLa and PLLb during writing are in opposite directions. For example, a current flows through the pole line PLLa in the +Y direction, and a current flows through the pole line PLLb in the -Y direction. This optimizes the magnetization generated in the poles 25b and 25c.

[0066] (Eighth embodiment) Fig. 17 is a cross-sectional view showing a configuration example of a magnetic memory according to an eighth embodiment. Fig. 18 is a plan view showing a configuration example of a magnetic memory according to an eighth embodiment. Fig. 17 shows a cross section taken along line BB in Fig. 18.

[0067] The eighth embodiment is similar to the seventh embodiment in that two poles 25b and 25c are provided for one pole 25a, and pole lines PLLa and PLLb are provided for one pole 25a.

[0068] On the other hand, in the eighth embodiment, the pole lines PLLa and PLLb are arranged inside the poles 25b and 25c when viewed from the insulating layer 26 (or the magnetic member ML). The pole line PLLa is provided so as to contact the side surface F25b3 of the pole 25b opposite to the side surface F25b2. The pole line PLLb is provided so as to contact the side surface F25c3 of the pole 25c opposite to the side surface F25c2. That is, the pole lines PLLa and PLLb are in contact with the opposing surfaces (F25b3, F25c3) of the poles 25b and 25c that face each other.

[0069] Other configurations of the eighth embodiment may be the same as those of the seventh embodiment. Therefore, when a write current is passed through the pole lines PLLa and PLLb, data can be efficiently written to the second end 11b of the magnetic member ML due to the SOT effect.

[0070] Furthermore, the currents flowing through the pole lines PLLa and PLLb during writing are in opposite directions. For example, a current flows through the pole line PLLa in the +Y direction, and a current flows through the pole line PLLb in the -Y direction. This optimizes the magnetization generated in the poles 25b and 25c.

[0071] (Ninth embodiment) Fig. 19 is a cross-sectional view showing a configuration example of a magnetic memory according to a ninth embodiment. Fig. 20 is a plan view showing a configuration example of a magnetic memory according to a ninth embodiment. Fig. 19 shows a cross section taken along line BB in Fig. 20.

[0072] The ninth embodiment is similar to the seventh embodiment in that two poles 25b and 25c are provided for one pole 25a, and pole lines PLLa and PLLb are provided for one pole 25a.

[0073] On the other hand, in the ninth embodiment, the pole lines PLLa and PLLb are arranged in the same direction relative to the poles 25b and 25c. The pole line PLLa is provided so as to contact the side surface F25b2 of the pole 25b. The pole line PLLb is provided so as to contact the side surface F25c3 of the pole 25c. That is, the pole lines PLLa and PLLb are in contact with the surfaces (F25b2, F25c3) of the poles 25b and 25c facing in the same direction.

[0074] Other configurations of the ninth embodiment may be the same as those of the seventh or eighth embodiment. Therefore, when a write current is passed through the pole lines PLLa and PLLb, data can be efficiently written to the second end 11b of the magnetic member ML due to the SOT effect.

[0075] Furthermore, the currents flowing through the pole lines PLLa and PLLb during writing are in the same direction. For example, currents flowing through both the pole lines PLLa and PLLb in the +Y direction are used. This optimizes the magnetizations generated in the poles 25b and 25c.

[0076] (Tenth embodiment) 21 is a plan view showing a configuration example of a magnetic memory according to a tenth embodiment. In the tenth embodiment, the pole lines PLLa and PLLb adjacent to each other in the seventh embodiment are integrated into one common line. Therefore, the arrangement of the multiple poles 25c arranged in the Y direction is adjacent to the multiple poles 25c in the X direction position coordinates, and the pole line PLL is shared between the multiple poles 25b arranged in the Y direction.

[0077] In this case, the number of pole lines PLL is reduced to about half, and accordingly the number of contacts (not shown) provided in the pole lines PLL is also reduced to about half, resulting in a smaller layout area of ​​the magnetic memory.

[0078] (Eleventh embodiment) FIG. 22 is a plan view showing a configuration example of a magnetic memory according to the eleventh embodiment. In the eleventh embodiment, the arrangement of the magnetic members ML differs from that of the tenth embodiment. Similar to the tenth embodiment, the multiple magnetic members ML are arranged in a triangular lattice pattern when viewed from the Z direction. However, the arrangement of the magnetic members ML in the eleventh embodiment is rotated by approximately 90° in the XY plane relative to the arrangement of the magnetic members ML in the tenth embodiment. This depends on the positions of the holes formed by anodizing during the production of the magnetic members ML. Thus, the arrangement of the magnetic members ML may be rotated by 90°.

[0079] Other configurations of the eleventh embodiment may be the same as those of the tenth embodiment, and therefore the eleventh embodiment can achieve the same effects as the tenth embodiment.

[0080] (Twelfth embodiment) 23 is a plan view showing a configuration example of a magnetic memory according to the twelfth embodiment. In the tenth embodiment, the pole lines PLL are substantially linear, but in the twelfth embodiment, the pole lines PLL extend in the Y direction while bending in the X direction. Even if the pole lines PLL are bent, the cross section of each magnetic member ML or each insulating layer 26 is similar to the cross section shown in FIG. 15. In the twelfth embodiment, the arrangement of the magnetic members ML selected during writing differs from that of the tenth embodiment, but other operations are similar to those of the tenth embodiment. Therefore, the twelfth embodiment can obtain the same effects as the tenth embodiment.

[0081] (Thirteenth embodiment) 24 to 26 are plan views showing configuration examples of magnetic memories according to the thirteenth to fifteenth embodiments, respectively. In the thirteenth to fifteenth embodiments, the pole line PLL is composed of a first wiring portion PLLp1 and a second wiring portion PLLp2. The first wiring portion PLLp1 is a wiring portion that contacts the pole 25a or 25b. Therefore, similarly to the pole line PLL of the above embodiment, the first wiring portion PLLp1 uses a material selected in consideration of the SOT effect (for example, W, Ta, Pt, Pd, Hf, Ir, Re, Ag, Au, Bi, Sb, Se, Te, Mo, or an alloy or compound containing any of these). The second wiring portion PLLp2 uses a material (for example, W, Cu, Pt, etc.) having a lower resistivity than the first wiring portion PLLp1 in order to reduce the wiring resistance as much as possible. By configuring the pole line PLL in this way by dividing it into the first wiring portion PLLp1 and the second wiring portion PLLp2, the pole line PLL can efficiently write data to the second end 11b of the magnetic member ML by the SOT effect, and can reduce the power consumption of the magnetic memory.

[0082] 24, the second wiring portion PLLp2 electrically connects the plurality of first wiring portions PLLp1 arranged in a staggered pattern. The second wiring portion PLLp2 extends between the plurality of first wiring portions PLLp1 in the X direction substantially perpendicular to the extension direction of the pole line PLL.

[0083] 25, the second wiring portion PLLp2 electrically connects the plurality of first wiring portions PLLp1 arranged in a substantially straight line. The second wiring portion PLLp2 extends between the plurality of first wiring portions PLLp1 in the extension direction (Y direction) of the pole line PLL.

[0084] 26, the second wiring portion PLLp2 electrically connects the first wiring portions PLLp1 arranged in a staggered pattern. Furthermore, the second wiring portion PLLp2 is shared by the first wiring portions PLLp1 adjacent to each other in the X-direction position coordinate. Therefore, the second wiring portion PLLp2 is formed to have, for example, a substantially parallelogram shape in plan view.

[0085] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, as well as within the scope of the invention described in the claims and their equivalents. [Explanation of symbols]

[0086] 10 Memory section 25a Pole 26 Insulating layer 25b Pole PLL pole line PL plate electrode ML Magnetic Materials 14 MTJ element 16 Non-magnetic conductive layer 18 Vertical thin-film transistor 19 Nonmagnetic conductive layer

Claims

1. a plurality of cylindrical first magnetic members extending in a first direction and having first and second ends; a plurality of second magnetic members provided corresponding to the plurality of first magnetic members and extending from inside the cylinder on the second end sides of the plurality of first magnetic members along the first direction; a plurality of third magnetic members provided above the plurality of second magnetic members in correspondence with the plurality of first magnetic members and electrically isolated from the plurality of second magnetic members; a plurality of first wirings extending along a second direction intersecting the first direction, arranged adjacent to each other in a third direction intersecting the first direction and the second direction, and electrically connected to the plurality of third magnetic members arranged in the second direction; a fourth magnetic member provided around the second end portions of the plurality of first magnetic members and electrically isolated from the plurality of third magnetic members; a plurality of second wirings provided on the first end side of the first magnetic member.

2. 2. The magnetic memory according to claim 1, wherein the plurality of first wirings contact first surfaces of the plurality of third magnetic members in the first direction.

3. 2. The magnetic memory according to claim 1, wherein the plurality of first wirings contact second surfaces of the plurality of third magnetic members in the third direction.

4. 2. The magnetic memory according to claim 1, wherein the plurality of first wirings contact both first surfaces in the first direction and second surfaces in the third direction of the plurality of third magnetic members.

5. 5. The magnetic memory of claim 4, wherein the plurality of first wirings on the first surfaces of the plurality of third magnetic members and the plurality of first wirings on the second surfaces of the plurality of third magnetic members are electrically connected to each other.

6. 6. The magnetic memory according to claim 1, wherein the fourth magnetic member is electrically connected in common to the second ends of the plurality of first magnetic members.

7. A magnetic memory as described in any one of claims 1 to 5, further comprising a conductive member located in a direction away from the plurality of first magnetic members and electrically connected to the fourth magnetic member, further away from the first to fourth magnetic members.

8. The magnetic memory according to claim 7 , further comprising a contact that electrically connects the fourth magnetic member and the conductive member.

9. 8. The magnetic memory according to claim 7, wherein the conductive member has a lower resistance than the fourth magnetic member.

10. The magnetic memory of claim 7 , wherein the conductive member comprises a fifth magnetic member.

11. The magnetic memory according to claim 1 , wherein the plurality of second magnetic members are substantially cylindrical.

12. The magnetic memory according to claim 11 , wherein the plurality of third magnetic members are substantially rectangular parallelepiped shaped.

13. 13. The magnetic memory according to claim 12, wherein the plurality of third magnetic members are located inside the plurality of second magnetic members in a plan view seen from the first direction.

14. 6. The magnetic memory according to claim 1, further comprising an insulating layer provided between the plurality of second magnetic members and the plurality of third magnetic members.

15. The magnetic memory according to claim 1 , wherein the plurality of second wirings extend in the third direction.

16. a plurality of sixth magnetic members provided above the plurality of second magnetic members in correspondence with the plurality of first magnetic members, the sixth magnetic members being electrically isolated from the plurality of second magnetic members and the plurality of third magnetic members; 2. The magnetic memory of claim 1, further comprising: a plurality of third wirings extending along the second direction and arranged adjacent to the plurality of first wirings in the third direction, the plurality of third wirings being electrically connected to the plurality of sixth magnetic members arranged in the second direction and electrically isolated from the plurality of second magnetic members and the plurality of third magnetic members.

17. 17. The magnetic memory according to claim 16, wherein the third wirings contact third surfaces of the sixth magnetic members in the third direction.

18. 18. The magnetic memory of claim 17, wherein the plurality of first wirings contact second surfaces of the plurality of third magnetic members in the third direction, and the second surfaces and the third surfaces of the plurality of sixth magnetic members face in directions away from each other.

19. 19. The magnetic memory according to claim 18, wherein currents flow through the plurality of first wirings and the plurality of third wirings in directions opposite to each other.

20. 18. The magnetic memory of claim 17, wherein the plurality of first wirings contact second surfaces of the plurality of third magnetic members in the third direction, and the second surfaces and the third surfaces of the plurality of sixth magnetic members are opposing surfaces facing each other.

21. 21. The magnetic memory according to claim 20, wherein currents flow through the first wirings and the third wirings in directions opposite to each other.

22. 18. The magnetic memory of claim 17, wherein the plurality of first wirings contact second surfaces of the plurality of third magnetic members in the third direction, and the second surfaces and the third surfaces of the plurality of sixth magnetic members are surfaces facing in the same direction.

23. 23. The magnetic memory according to claim 22, wherein currents flow in the same direction through said plurality of first wirings and said plurality of third wirings.

24. the magnetic field generating device further includes a plurality of sixth magnetic members provided above the plurality of second magnetic members in correspondence with the plurality of first magnetic members, the sixth magnetic members being electrically isolated from the plurality of second magnetic members and the plurality of third magnetic members; the first wirings contact second surfaces of the third magnetic members in the third direction and third surfaces of the sixth magnetic members in the third direction; 2. The magnetic memory of claim 1, wherein the plurality of sixth magnetic members arranged in the second direction are adjacent to the plurality of sixth magnetic members at position coordinates in the third direction, and share the first wiring with the plurality of third magnetic members arranged in the second direction.

25. 25. The magnetic memory according to claim 24, wherein the first wiring extends in the second direction while bending in the third direction.

26. 25. The magnetic memory of claim 24, wherein the plurality of first wirings comprises a plurality of first wiring portions that contact the plurality of third or sixth magnetic members, and a second wiring portion that is provided between adjacent first wiring portions and has a lower resistance than the plurality of first wiring portions.

27. 2. The magnetic memory according to claim 1, wherein the plurality of first wirings comprise a plurality of first wiring portions that contact the plurality of third magnetic members, and a second wiring portion that is provided between adjacent first wiring portions and has a lower resistance than the plurality of first wiring portions.

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